Integration of the CAR Interface module for the RRS of Research Reactor

Energy Technology Data Exchange (ETDEWEB)

Bae, Sang Hoon; Baang, Dane; Park, Gee Yong; Choi, Young San; Kim, Young Ki [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2011-10-15

In a research reactor, a CAR(Control Absorber Rod) interface module which receives the control information from the RRS(Reactor Regulating System) control computer and transfer control signal to a step motor in a CAR has been composed of an interface card, an indexer card and a driver card. Due to such separated interface components, the additional interface for each component was inevitable. That is, a CAR interface was more complicated and its corresponding communication ports, drivers and signal cables were unnecessarily required. To simplify this stuff, the interface card and indexer card are integrated to one module and integrated communication network including a step motor driver card can be established through backplane network. The CAR interface module has not been redundant because power operation excluding a CAR by a failure in CAR could be available thanks to remained CARs. But, actually in spite of one CAR failure, operation with remained CARs normally is likely impossible to keep track of rapid dynamics. To solve this problem, the modular redundant structure is introduced herein and this method will let us anticipate the high reliability

Integration of the CAR Interface module for the RRS of Research Reactor

International Nuclear Information System (INIS)

Bae, Sang Hoon; Baang, Dane; Park, Gee Yong; Choi, Young San; Kim, Young Ki

2011-01-01

In a research reactor, a CAR(Control Absorber Rod) interface module which receives the control information from the RRS(Reactor Regulating System) control computer and transfer control signal to a step motor in a CAR has been composed of an interface card, an indexer card and a driver card. Due to such separated interface components, the additional interface for each component was inevitable. That is, a CAR interface was more complicated and its corresponding communication ports, drivers and signal cables were unnecessarily required. To simplify this stuff, the interface card and indexer card are integrated to one module and integrated communication network including a step motor driver card can be established through backplane network. The CAR interface module has not been redundant because power operation excluding a CAR by a failure in CAR could be available thanks to remained CARs. But, actually in spite of one CAR failure, operation with remained CARs normally is likely impossible to keep track of rapid dynamics. To solve this problem, the modular redundant structure is introduced herein and this method will let us anticipate the high reliability

Design of Wireless GPIB Interface Module Based on Bluetooth

International Nuclear Information System (INIS)

Fu, P; Ma, W J; Huang, C J

2006-01-01

GPIB interface is widely used in the testing and control field. In this paper a wireless GPIB interface module based on Bluetooth is developed. Programming with Verilog HDL language on the hardware of ROK 101 008 and a FPGA chip, the complicated logical design of GPIB interface and the Bluetooth data processing unit are implemented. On basis of Bluetooth specifications, the software for the control computer is developed. In order to provide a standard software interface for users, a VISA library that is compatible with the VPP specifications is also designed

Design of Wireless GPIB Interface Module Based on Bluetooth

Energy Technology Data Exchange (ETDEWEB)

Fu, P [Department of Automatic Testing and Control, Harbin Institute of Technology, Harbin 150001 (China); Ma, W J [Department of Automatic Testing and Control, Harbin Institute of Technology, Harbin 150001 (China); Huang, C J [Department of Automatic Testing and Control, Harbin Institute of Technology, Harbin 150001 (China)

2006-10-15

GPIB interface is widely used in the testing and control field. In this paper a wireless GPIB interface module based on Bluetooth is developed. Programming with Verilog HDL language on the hardware of ROK 101 008 and a FPGA chip, the complicated logical design of GPIB interface and the Bluetooth data processing unit are implemented. On basis of Bluetooth specifications, the software for the control computer is developed. In order to provide a standard software interface for users, a VISA library that is compatible with the VPP specifications is also designed.

Electron confinement at diffuse ZnMgO/ZnO interfaces

Directory of Open Access Journals (Sweden)

Maddison L. Coke

2017-01-01

Full Text Available Abrupt interfaces between ZnMgO and ZnO are strained due to lattice mismatch. This strain is relaxed if there is a gradual incorporation of Mg during growth, resulting in a diffuse interface. This strain relaxation is however accompanied by reduced confinement and enhanced Mg-ion scattering of the confined electrons at the interface. Here we experimentally study the electronic transport properties of the diffuse heteroepitaxial interface between single-crystal ZnO and ZnMgO films grown by molecular-beam epitaxy. The spatial extent of the interface region is controlled during growth by varying the zinc flux. We show that, as the spatial extent of the graded interface is reduced, the enhancement of electron mobility due to electron confinement more than compensates for any suppression of mobility due to increased strain. Furthermore, we determine the extent to which scattering of impurities in the ZnO substrate limits the electron mobility in diffuse ZnMgO–ZnO interfaces.

Electron confinement at diffuse ZnMgO/ZnO interfaces

Science.gov (United States)

Coke, Maddison L.; Kennedy, Oscar W.; Sagar, James T.; Warburton, Paul A.

2017-01-01

Abrupt interfaces between ZnMgO and ZnO are strained due to lattice mismatch. This strain is relaxed if there is a gradual incorporation of Mg during growth, resulting in a diffuse interface. This strain relaxation is however accompanied by reduced confinement and enhanced Mg-ion scattering of the confined electrons at the interface. Here we experimentally study the electronic transport properties of the diffuse heteroepitaxial interface between single-crystal ZnO and ZnMgO films grown by molecular-beam epitaxy. The spatial extent of the interface region is controlled during growth by varying the zinc flux. We show that, as the spatial extent of the graded interface is reduced, the enhancement of electron mobility due to electron confinement more than compensates for any suppression of mobility due to increased strain. Furthermore, we determine the extent to which scattering of impurities in the ZnO substrate limits the electron mobility in diffuse ZnMgO-ZnO interfaces.

Surface and Interface Physics of Correlated Electron Materials

Energy Technology Data Exchange (ETDEWEB)

Millis, Andrew [Columbia Univ., New York, NY (United States)

2004-09-01

The {\\it Surface and Interface Physics of Correlated Electron Materials} research program provided conceptual understanding of and theoretical methodologies for understanding the properties of surfaces and interfaces involving materials exhibiting strong electronic correlations. The issues addressed in this research program are important for basic science, because the behavior of correlated electron superlattices is a crucial challenge to and crucial test of our understanding of the grand-challenge problem of correlated electron physics and are important for our nation's energy future because correlated interfaces offer opportunities for the control of phenomena needed for energy and device applications. Results include new physics insights, development of new methods, and new predictions for materials properties.

Processing and characterization of device solder interconnection and module attachment for power electronics modules

Science.gov (United States)

Haque, Shatil

This research is focused on the processing of an innovative three-dimensional packaging architecture for power electronics building blocks with soldered device interconnections and subsequent characterization of the module's critical interfaces. A low-cost approach termed metal posts interconnected parallel plate structure (MPIPPS) was developed for packaging high-performance modules of power electronics building blocks (PEBB). The new concept implemented direct bonding of copper posts, not wire bonding of fine aluminum wires, to interconnect power devices as well as joining the different circuit planes together. We have demonstrated the feasibility of this packaging approach by constructing PEBB modules (consisting of Insulated Gate Bipolar Transistors (IGBTs), diodes, and a few gate driver elements and passive components). In the 1st phase of module fabrication with IGBTs with Si3N 4 passivation, we had successfully fabricated packaged devices and modules using the MPIPPS technique. These modules were tested electrically and thermally, and they operated at pulse-switch and high power stages up to 6kW. However, in the 2nd phase of module fabrication with polyimide passivated devices, we experienced significant yield problems due to metallization difficulties of these devices. The under-bump metallurgy scheme for the development of a solderable interface involved sputtering of Ti-Ni-Cu and Cr-Cu, and an electroless deposition of Zn-Ni-Au metallization. The metallization process produced excellent yield in the case of Si3N4 passivated devices. However, under the same metallization schemes, devices with a polyimide passivation exhibited inconsistent electrical contact resistance. We found that organic contaminants such as hydrocarbons remain in the form of thin monolayers on the surface, even in the case of as-received devices from the manufacturer. Moreover, in the case of polyimide passivated devices, plasma cleaning introduced a few carbon constituents on the

Metal-dielectric interfaces in gigascale electronics thermal and electrical stability

CERN Document Server

He, Ming

2012-01-01

Metal-dielectric interfaces are ubiquitous in modern electronics. As advanced gigascale electronic devices continue to shrink, the stability of these interfaces is becoming an increasingly important issue that has a profound impact on the operational reliability of these devices. In this book, the authors present the basic science underlying  the thermal and electrical stability of metal-dielectric interfaces and its relationship to the operation of advanced interconnect systems in gigascale electronics. Interface phenomena, including chemical reactions between metals and dielectrics, metallic-atom diffusion, and ion drift, are discussed based on fundamental physical and chemical principles. Schematic diagrams are provided throughout the book to illustrate  interface phenomena and the principles that govern them. Metal-Dielectric Interfaces in Gigascale Electronics  provides a unifying approach to the diverse and sometimes contradictory test results that are reported in the literature on metal-dielectric i...

Local Electronic And Dielectric Properties at Nanosized Interfaces

Energy Technology Data Exchange (ETDEWEB)

Bonnell, Dawn A. [Univ. of Pennsylvania, Philadelphia, PA (United States)

2015-02-23

Final Report to the Department of Energy for period 6/1/2000 to 11/30/2014 for Grant # DE-FG02-00ER45813-A000 to the University of Pennsylvania Local Electronic And Dielectric Properties at Nanosized Interfaces PI: Dawn Bonnell The behavior of grain boundaries and interfaces has been a focus of fundamental research for decades because variations of structure and composition at interfaces dictate mechanical, electrical, optical and dielectric properties in solids. Similarly, the consequence of atomic and electronic structures of surfaces to chemical and physical interactions are critical due to their implications to catalysis and device fabrication. Increasing fundamental understanding of surfaces and interfaces has materially advanced technologies that directly bear on energy considerations. Currently, exciting developments in materials processing are enabling creative new electrical, optical and chemical device configurations. Controlled synthesis of nanoparticles, semiconducting nanowires and nanorods, optical quantum dots, etc. along with a range of strategies for assembling and patterning nanostructures portend the viability of new devices that have the potential to significantly impact the energy landscape. As devices become smaller the impact of interfaces and surfaces grows geometrically. As with other nanoscale phenomena, small interfaces do not exhibit the same properties as do large interfaces. The size dependence of interface properties had not been explored and understanding at the most fundamental level is necessary to the advancement of nanostructured devices. An equally important factor in the behavior of interfaces in devices is the ability to examine the interfaces under realistic conditions. For example, interfaces and boundaries dictate the behavior of oxide fuel cells which operate at extremely high temperatures in dynamic high pressure chemical environments. These conditions preclude the characterization of local properties during fuel cell

Organic/metal interfaces. Electronic and structural properties

Energy Technology Data Exchange (ETDEWEB)

Duhm, Steffen

2008-07-17

This work addresses several important topics of the field of organic electronics. The focus lies on organic/metal interfaces, which exist in all organic electronic devices. Physical properties of such interfaces are crucial for device performance. Four main topics have been covered: (i) the impact of molecular orientation on the energy levels, (ii) energy level tuning with strong electron acceptors, (iii) the role of thermodynamic equilibrium at organic/ organic homo-interfaces and (iv) the correlation of interfacial electronic structure and bonding distance. To address these issues a broad experimental approach was necessary: mainly ultraviolet photoelectron spectroscopy was used, supported by X-ray photoelectron spectroscopy, metastable atom electron spectroscopy, X-ray diffraction and X-ray standing waves, to examine vacuum sublimed thin films of conjugated organic molecules (COMs) in ultrahigh vacuum. (i) A novel approach is presented to explain the phenomenon that the ionization energy in molecular assemblies is orientation dependent. It is demonstrated that this is due to a macroscopic impact of intramolecular dipoles on the ionization energy in molecular assemblies. Furthermore, the correlation of molecular orientation and conformation has been studied in detail for COMs on various substrates. (ii) A new approach was developed to tune hole injection barriers ({delta}{sub h}) at organic/metal interfaces by adsorbing a (sub-) monolayer of an organic electron acceptor on the metal electrode. Charge transfer from the metal to the acceptor leads to a chemisorbed layer, which reduces {delta}{sub h} to the COM overlayer. This concept was tested with three acceptors and a lowering of {delta}{sub h} of up to 1.2 eV could be observed. (iii) A transition from vacuum-level alignment to molecular level pinning at the homo-interface between a lying monolayer and standing multilayers of a COM was observed, which depended on the amount of a pre-deposited acceptor. The

WRAP module 1 DMS/PCS interface definition document

International Nuclear Information System (INIS)

Weidert, J.R.

1994-01-01

This document has been developed to define the computer software interfaces between Waste Receiving ampersand Processing Module 1 (WRAP 1) computer systems. The interfaces include those data interfaces which exist between the Plant Control System (PCS) and Data Management System (DMS), between the DMS and Non-Destructive Assay (NDA) equipment, and between the DMS and Boxed Waste Assay System (BWAS) equipment. In addition to the data interfaces between the various WRAP computer systems; there are also a number of control functions between WRAP 1 equipment. These control function interfaces have been specified in WRAP Construction specification 13462 and the associated equipment specifications. The PCS vendor has been listed in the equipment specifications as the responsible party for establishing the final control system interface between the PCS and Non-Destructive Examination (NDE) Equipment, the PCS and Non-Destructive Assay (NDA) Equipment, and the PCS and BWAS equipment. The primary interface requirements between these systems are addressed in Specification Sections 13462, 13532, 13533, 13026, 13537, and 13538. Additional requirements may be found in other specification sections such as the Automatic Stacker Retriever System (AS/RS) Technical Specification 14520 and the WRAP 1 Data Management System Software Requirements Specification

Evolution of the SrTiO3/MoO3 interface electronic structure: An in situ photoelectron spectroscopy study

KAUST Repository

Du, Yuanmin; Peng, Haiyang; Mao, Hongying; Jin, Kexin; Wang, Hong; Li, Feng; Gao, Xingyu; Chen, Wei; Wu, Tao

2015-01-01

Modifying the surface energetics, particularly the work function, of advanced materials is of critical importance for a wide range of surface- and interface-based devices. In this work, using in situ photoelectron spectroscopy, we investigated the evolution of electronic structure at the SrTiO3 surface during the growth of ultrathin MoO3 layers. Thanks to the large work function difference between SrTiO3 and MoO3, the energy band alignment on the SrTiO3 surface is significantly modified. The charge transfer and dipole formation at the SrTiO3/MoO3 interface leads to a large modulation of work function and an apparent doping in SrTiO3. The measured evolution of electronic structure and upward band bending suggest that the growth of ultrathin MoO3 layers is a powerful tool to modulate the surface energetics of SrTiO3, and this surface-engineering approach could be generalized to other functional oxides.

Evolution of the SrTiO3/MoO3 interface electronic structure: An in situ photoelectron spectroscopy study

KAUST Repository

Du, Yuanmin

2015-05-12

Modifying the surface energetics, particularly the work function, of advanced materials is of critical importance for a wide range of surface- and interface-based devices. In this work, using in situ photoelectron spectroscopy, we investigated the evolution of electronic structure at the SrTiO3 surface during the growth of ultrathin MoO3 layers. Thanks to the large work function difference between SrTiO3 and MoO3, the energy band alignment on the SrTiO3 surface is significantly modified. The charge transfer and dipole formation at the SrTiO3/MoO3 interface leads to a large modulation of work function and an apparent doping in SrTiO3. The measured evolution of electronic structure and upward band bending suggest that the growth of ultrathin MoO3 layers is a powerful tool to modulate the surface energetics of SrTiO3, and this surface-engineering approach could be generalized to other functional oxides.

Interface-mediated amorphization of coesite by 200 keV electron irradiation

International Nuclear Information System (INIS)

Gong, W.L.; Wang, L.M.; Ewing, R.C.; Xie, H.S.

1997-01-01

Electron-induced amorphization of coesite was studied as a function of irradiation temperature by in situ transmission electron microscopy at an incident energy of 200 keV. Electron-induced amorphization of coesite is induced by an ionization mechanism and is mainly dominated by an interface-mediated, heterogeneous nucleation-and-growth controlled process. Amorphous domains nucleate at surfaces, crystalline-amorphous (c-a) interfaces, and grain boundaries. This is the same process as the interface-mediated vitrification of coesite by isothermal annealing above the thermodynamic melting temperature (875 K), but below the glass transition temperature (1480 K). The interface-mediated amorphization of coesite by electron irradiation is morphologically similar to interface-mediated thermodynamic melting. copyright 1997 American Institute of Physics

The making of analog module for gamma camera interface

International Nuclear Information System (INIS)

Yulinarsari, Leli; Rl, Tjutju; Susila, Atang; Sukandar

2003-01-01

The making of an analog module for gamma camera has been conducted. For computerization of planar gamma camera 37 PMT it has been developed interface hardware technology and software between the planar gamma camera with PC. With this interface gamma camera image information (Originally analog signal) was changed to digital single, therefore processes of data acquisition, image quality increase and data analysis as well as data base processing can be conducted with the help of computers, there are three gamma camera main signals, i.e. X, Y and Z . This analog module makes digitation of analog signal X and Y from the gamma camera that conveys position information coming from the gamma camera crystal. Analog conversion to digital was conducted by 2 converters ADC 12 bit with conversion time 800 ns each, conversion procedure for each coordinate X and Y was synchronized using suitable strobe signal Z for information acceptance

A multi-system interface module for automating the patient treatment cycle

International Nuclear Information System (INIS)

Fox, Tim; Brooks, Ken; Davis, Larry

1996-01-01

Purpose: The use of many different computer systems in a radiation oncology department for treatment simulation, planning, and delivery typically introduces increased planning times and redundant data entry. This redundancy is not only a time-consuming chore, but it also has the possibility of introducing human errors at each step. These computer systems often have different hardware platforms and operating systems making it even more difficult to the users for accessing the data. In addition, there is typically a common set of patient and treatment information scattered among these various systems. The purpose of this study is to describe our experience for automating the patient treatment cycle which includes treatment simulation, planning, and delivery using an interface module for sharing this core set of data among the various computer systems in a department without additional complexity to the staff. Materials and Methods: An object-oriented software tool was developed to support a user-driven, dependent query, retrieve, and update of different radiation therapy data systems using Networked File Systems (NFS) and the Structured Query Language (SQL). The interface module was designed to support a many-to-many systems' connectivity depending on the needs of a department. The software tool makes use of the Virtual Machine Platform and Foundation Library specifications of the NCI-sponsored Radiation Therapy Planning Tools Collaborative Working Group for accessing treatment planning data from a system that conforms to these standards. It also takes advantage of the Microsoft Open Database Connectivity (ODBC) standard for accessing commercial radiation therapy database systems. A custom data access method is developed for any data system that does not conform to these two standards. The software tool has an intuitive graphical user interface for review and verification of the data after the query and retrieve process. The software was written in the C++ language

Electronic structure imperfections and chemical bonding at graphene interfaces

Science.gov (United States)

Schultz, Brian Joseph

The manifestation of novel phenomena upon scaling to finite size has inspired a paradigm shift in materials science that takes advantage of the distinctive electrical and physical properties of nanomaterials. Remarkably, the simple honeycomb arrangement of carbon atoms in a single atomic layer has become renowned for exhibiting never-before-seen electronic and physical phenomena. This archetypal 2-dimensional nanomaterial is known as graphene, a single layer of graphite. Early reports in the 1950's eluded to graphene-like nanostructures that were evidenced from exfoliation of oxidized graphite followed by chemical reduction, absorbed carbon on transition metals, and thermal decomposition of SiC. Furthermore, the earliest tight binding approximation calculations in the 1950's held clues that a single-layer of graphite would behave drastically different than bulk graphite. Not until 2004, when Giem and Novoselov first synthesized graphene by mechanical exfoliation from highly-oriented pyrolytic graphite did the field of graphene-based research bloom within the scientific community. Since 2004, the availability and relatively straight forward synthesis of single-layer graphene (SLG) enabled the observation of remarkable phenomena including: massless Dirac fermions, extremely high mobilities of its charge carriers, room temperature half-integer quantum Hall effect, the Rashba effect, and the potential for ballistic conduction over macroscopic distances. These enticing electronic properties produce the drive to study graphene for use in truly nanoscale electrical interconnects, integrated circuits, transparent conducting electrodes, ultra-high frequency transistors, and spintronic devices, just to name a few. Yet, for almost all real world applications graphene will need to be interfaced with other materials, metals, dielectrics, organics, or any combination thereof that in turn are constituted from various inorganic and organic components. Interfacing graphene, a

Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces via charge transfer induced modulation doping

DEFF Research Database (Denmark)

Chen, Yunzhong; Trier, Felix; Wijnands, T.

2015-01-01

as applied research of complex oxides. Here, we inserted a single unit cell insulating layer of polar La1-xSrxMnO3 (x=0, 1/8, and 1/3) at the interface between disordered LaAlO3 and crystalline SrTiO3 created at room temperature. We find that the electron mobility of the interfacial 2DEG is enhanced by more...

Graphical user interface for a dual-module EMCCD x-ray detector array

Science.gov (United States)

Wang, Weiyuan; Ionita, Ciprian; Kuhls-Gilcrist, Andrew; Huang, Ying; Qu, Bin; Gupta, Sandesh K.; Bednarek, Daniel R.; Rudin, Stephen

2011-03-01

A new Graphical User Interface (GUI) was developed using Laboratory Virtual Instrumentation Engineering Workbench (LabVIEW) for a high-resolution, high-sensitivity Solid State X-ray Image Intensifier (SSXII), which is a new x-ray detector for radiographic and fluoroscopic imaging, consisting of an array of Electron-Multiplying CCDs (EMCCDs) each having a variable on-chip electron-multiplication gain of up to 2000x to reduce the effect of readout noise. To enlarge the field-of-view (FOV), each EMCCD sensor is coupled to an x-ray phosphor through a fiberoptic taper. Two EMCCD camera modules are used in our prototype to form a computer-controlled array; however, larger arrays are under development. The new GUI provides patient registration, EMCCD module control, image acquisition, and patient image review. Images from the array are stitched into a 2kx1k pixel image that can be acquired and saved at a rate of 17 Hz (faster with pixel binning). When reviewing the patient's data, the operator can select images from the patient's directory tree listed by the GUI and cycle through the images using a slider bar. Commonly used camera parameters including exposure time, trigger mode, and individual EMCCD gain can be easily adjusted using the GUI. The GUI is designed to accommodate expansion of the EMCCD array to even larger FOVs with more modules. The high-resolution, high-sensitivity EMCCD modular-array SSXII imager with the new user-friendly GUI should enable angiographers and interventionalists to visualize smaller vessels and endovascular devices, helping them to make more accurate diagnoses and to perform more precise image-guided interventions.

Graphical User Interface for a Dual-Module EMCCD X-ray Detector Array.

Science.gov (United States)

Wang, Weiyuan; Ionita, Ciprian; Kuhls-Gilcrist, Andrew; Huang, Ying; Qu, Bin; Gupta, Sandesh K; Bednarek, Daniel R; Rudin, Stephen

2011-03-16

A new Graphical User Interface (GUI) was developed using Laboratory Virtual Instrumentation Engineering Workbench (LabVIEW) for a high-resolution, high-sensitivity Solid State X-ray Image Intensifier (SSXII), which is a new x-ray detector for radiographic and fluoroscopic imaging, consisting of an array of Electron-Multiplying CCDs (EMCCDs) each having a variable on-chip electron-multiplication gain of up to 2000× to reduce the effect of readout noise. To enlarge the field-of-view (FOV), each EMCCD sensor is coupled to an x-ray phosphor through a fiberoptic taper. Two EMCCD camera modules are used in our prototype to form a computer-controlled array; however, larger arrays are under development. The new GUI provides patient registration, EMCCD module control, image acquisition, and patient image review. Images from the array are stitched into a 2k×1k pixel image that can be acquired and saved at a rate of 17 Hz (faster with pixel binning). When reviewing the patient's data, the operator can select images from the patient's directory tree listed by the GUI and cycle through the images using a slider bar. Commonly used camera parameters including exposure time, trigger mode, and individual EMCCD gain can be easily adjusted using the GUI. The GUI is designed to accommodate expansion of the EMCCD array to even larger FOVs with more modules. The high-resolution, high-sensitivity EMCCD modular-array SSXII imager with the new user-friendly GUI should enable angiographers and interventionalists to visualize smaller vessels and endovascular devices, helping them to make more accurate diagnoses and to perform more precise image-guided interventions.

Development of a Compact Wireless Laplacian Electrode Module for Electromyograms and Its Human Interface Applications

Directory of Open Access Journals (Sweden)

Akira Ichikawa

2013-02-01

Full Text Available In this study, we developed a compact wireless Laplacian electrode module for electromyograms (EMGs. One of the advantages of the Laplacian electrode configuration is that EMGs obtained with it are expected to be sensitive to the firing of the muscle directly beneath the measurement site. The performance of the developed electrode module was investigated in two human interface applications: character-input interface and detection of finger movement during finger Braille typing. In the former application, the electrode module was combined with an EMG-mouse click converter circuit. In the latter, four electrode modules were used for detection of finger movements during finger Braille typing. Investigation on the character-input interface indicated that characters could be input stably by contraction of (a the masseter, (b trapezius, (c anterior tibialis and (d flexor carpi ulnaris muscles. This wide applicability is desirable when the interface is applied to persons with physical disabilities because the disability differs one to another. The investigation also demonstrated that the electrode module can work properly without any skin preparation. Finger movement detection experiments showed that each finger movement was more clearly detectable when comparing to EMGs recorded with conventional electrodes, suggesting that the Laplacian electrode module is more suitable for detecting the timing of finger movement during typing. This could be because the Laplacian configuration enables us to record EMGs just beneath the electrode. These results demonstrate the advantages of the Laplacian electrode module.

Some ways for the investigation of the solar modulation of cosmic electrons; Moyens d'etude de la modulation solaire des electrons cosmiques

Energy Technology Data Exchange (ETDEWEB)

Mercier, J [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

1969-07-01

In this report, we are investigating the solar modulation of cosmic electrons, in different ways. By comparing the calculated intensity with the measured intensity of positrons, we can evaluate the solar modulation of positrons, hence the modulation of negatons, since the modulation of negatons is probably the same that for positrons. By comparing the electron spectrum in interstellar space needed to explain the galactic background radio emission with that observed near the earth, we can deduce information about the modulation of electrons. We can investigate the modulation through the observation of its variations during the solar cycle. This different ways lead us to compatible results. In spite of the fact that the precision of the experimental data is poor, the modulation can be represented by: a constant or a form in exp(- K/Ro{beta}) under the rigidity Ro {approx_equal} 0,5 BV; a form in exp(- K/R) or exp(- K/R{beta}) above this rigidity. In addition, the investigation of both electrons and protons displays that the diffusion-convection theory is inadequate to explain all the features of the solar modulation. (author) [French] Dans le present rapport, nous etudions la modulation solaire des electrons cosmiques a l'aide de plusieurs methodes. Par comparaison entre l'intensite calculee et l'intensite mesuree des positons, on peut evaluer la modulation solaire des positons, et aussi des negatons, puisque la modulation des negatons est probablement la meme que celle des positons. Par le calcul, a partir du bruit de fond radio, du flux des electrons a l'exterieur du systeme solaire et sa confrontation avec le flux observe a l'orbite de la Terre permet l'etude de la modulation solaire des electrons. On peut aussi analyser ce phenomene de modulation pour l'etude de ses variations au cours du cycle solaire. Ces diverses methodes donnent des resultats compatibles. En depit de la precision mediocre des donnees experimentales, on peut caracteriser la modulation par: une

Utility Interfaced Pulse-Width Modulation of Solar Fed Voltage ...

African Journals Online (AJOL)

Utility Interfaced Pulse-Width Modulation of Solar Fed Voltage Source Inverter Using Fixed-Band Hysteresis Current Controller Method. ... with the conversion of solar energy into electrical energy; boosting the dc power; inversion of the dc to ac and then synchronization of the inverter output with the utility, and consequently, ...

Interface electron structure of Fe3Al/TiC composites

Institute of Scientific and Technical Information of China (English)

PANG Lai-xue; SUN Kang-ning; SUN Jia-tao; FAN Run-hua; REN Shuai

2006-01-01

Based on YU's solids and molecules emperical electron theory(EET), interface valence electron structure of TiC-Fe3Al composites was set up, and the valence electron density of different atomic states TiC and Fe3Al composites in various planes was determined. The results indicate that the electron density of (100)Fe3Al is consistent with that of (110)TiC in the first-class approximation, the absolute value of minimum electron density difference along the interface is 0.007 37 nm-2, and the relative value is 0.759%. (110)TiC//(100)Fe3Al preferred orientation is believed to benefit the formation of the cuboidal shape TiC. In the other hand, it shows that the particle growth is accompanied by the transport of electron, the deviation continuity of electron density intrinsically hinders the grain growth. The electron density of (100)TiC is not consistent with Fe3Al arbitrary crystallographic plane,thus it well explains that the increased titanium and carbon contents do not increase the size of large particles. The crystallographic orientation of (110)TiC//(100)FeAl will improve the mechanical properties. Therefore interface electron theory is an effective theoretical implement for designing excellent property of composites.

Electronic structure and electron dynamics at an organic molecule/metal interface: interface states of tetra-tert-butyl-imine/Au(111)

International Nuclear Information System (INIS)

Hagen, Sebastian; Wolf, Martin; Tegeder, Petra; Luo Ying; Haag, Rainer

2010-01-01

Time- and angle-resolved two-photon photoemission (2PPE) spectroscopies have been used to investigated the electronic structure, electron dynamics and localization at the interface between tetra-tert-butyl imine (TBI) and Au(111). At a TBI coverage of one monolayer (ML), the two highest occupied molecular orbitals, HOMO and HOMO-1, are observed at an energy of -1.9 and -2.6 eV below the Fermi level (E F ), respectively, and coincide with the d-band features of the Au substrate. In the unoccupied electronic structure, the lowest unoccupied molecular orbital (LUMO) has been observed at 1.6 eV with respect to E F . In addition, two delocalized states that arise from the modified image potential at the TBI/metal interface have been identified. Their binding energies depend strongly on the adsorption structure of the TBI adlayer, which is coverage dependent in the submonolayer (≤1 ML) regime. Thus the binding energy of the lower interface state (IS) shifts from 3.5 eV at 1.0 ML to 4.0 eV at 0.5 ML, which is accompanied by a pronounced decrease in its lifetime from 100 fs to below 10 fs. This is a result of differences in the wave function overlap with electronic states of the Au(111) substrate at different binding energies. This study shows that in order to fully understand the electronic structure of organic adsorbates at metal surfaces, not only adsorbate- and substrate-induced electronic states have to be considered but also ISs, which are the result of a potential formed by the interaction between the adsorbate and the substrate.

Oblique electron-cyclotron-emission radial and phase detector of rotating magnetic islands applied to alignment and modulation of electron-cyclotron-current-drive for neoclassical tearing mode stabilization

International Nuclear Information System (INIS)

Volpe, F.; Austin, M. E.; Campbell, G.; Deterly, T.

2012-01-01

A two channel oblique electron cyclotron emission (ECE) radiometer was installed on the DIII-D tokamak and interfaced to four gyrotrons. Oblique ECE was used to toroidally and radially localize rotating magnetic islands and so assist their electron cyclotron current drive (ECCD) stabilization. In particular, after manipulations operated by the interfacing analogue circuit, the oblique ECE signals directly modulated the current drive in synch with the island rotation and in phase with the island O-point, for a more efficient stabilization. Apart from the different toroidal location, the diagnostic view is identical to the ECCD launch direction, which greatly simplified the real-time use of the signals. In fact, a simple toroidal extrapolation was sufficient to lock the modulation to the O-point phase. This was accomplished by a specially designed phase shifter of nearly flat response over the 1–7 kHz range. Moreover, correlation analysis of two channels slightly above and below the ECCD frequency allowed checking the radial alignment to the island, based on the fact that for satisfactory alignment the two signals are out of phase.

Interaction of the Modulated Electron Beam with Plasma: Kinetic Effects

International Nuclear Information System (INIS)

Anisimov, I.O.; Kiyanchuk, M.J.; Soroka, S.V.; Velikanets', D.M.

2006-01-01

Evolution of the velocity distribution functions of plasma and beam electrons during modulated electron beam propagation in homogeneous and inhomogeneous plasmas was studied numerically. Velocity distribution function of plasma electrons at the late time moments strongly differs from the initially Maxwellian one. In the regions of strong electric field plasma electrons' bunches are formed. Comparison of distribution functions of beam electrons for modulated and non-modulated beams shows that deep initial modulation suppresses resonant instability development. In the inhomogeneous plasma acceleration of electrons in the plasma resonance point can be observed

Nanoscale characterization of bone-implant interface and biomechanical modulation of bone ingrowth

Energy Technology Data Exchange (ETDEWEB)

Clark, Paul A. [Tissue Engineering Laboratory MC 841, Departments of Anatomy and Cell Biology, Bioengineering, and Orthodontics, University of Illinois at Chicago, Chicago, 801 South Paulina Street, Illinois 60612 (United States)]. E-mail: pclark4@gmail.com; Clark, Andrew M. [Tissue Engineering Laboratory MC 841, Departments of Anatomy and Cell Biology, Bioengineering, and Orthodontics, University of Illinois at Chicago, Chicago, 801 South Paulina Street, Illinois 60612 (United States); Rodriguez, Anthony [Tissue Engineering Laboratory MC 841, Departments of Anatomy and Cell Biology, Bioengineering, and Orthodontics, University of Illinois at Chicago, Chicago, 801 South Paulina Street, Illinois 60612 (United States); Hussain, Mohammad A. [Tissue Engineering Laboratory MC 841, Departments of Anatomy and Cell Biology, Bioengineering, and Orthodontics, University of Illinois at Chicago, Chicago, 801 South Paulina Street, Illinois 60612 (United States); Mao, Jeremy J. [Tissue Engineering Laboratory MC 841, Departments of Anatomy and Cell Biology, Bioengineering, and Orthodontics, University of Illinois at Chicago, Chicago, 801 South Paulina Street, Illinois 60612 (United States)]. E-mail: jmao2@uic.edu

2007-04-15

Bone-implant interface is characterized by an array of cells and macromolecules. This study investigated the nanomechancial properties of bone-implant interface using atomic force microscopy in vitro, and the mechanical modulation of implant bone ingrowth in vivo using bone histomorphometry. Upon harvest of screw-type titanium implants placed in vivo in the rabbit maxilla and proximal femur for 4 weeks, nanoindentation was performed in the bone-implant interface at 60-{mu}m intervals radially from the implant surface. The average Young's Moduli (E) of the maxillary bone-implant interface was 1.13 {+-} 0.27 MPa, lacking significant differences at all intervals. In contrast, an increasing gradient of E was observed radially from the femur bone-implant interface: 0.87 {+-} 0.25 MPa to 2.24 {+-} 0.69 MPa, representing significant differences among several 60-{mu}m intervals. In a separate experiment, bone healing was allowed for 6 weeks for proximal femur implants. The right femoral implant received axial cyclic loading at 200 mN and 1 Hz for 10 min/d over 12 days, whereas the left femoral implant served as control. Cyclic loading induced significantly higher bone volume, osteoblast numbers per endocortical bone surface, mineral apposition rate, and bone formation rate than controls. These data demonstrate nanoscale and microscale characterizations of bone-implant interface, and mechanical modulation of bone ingrowth surrounding titanium implants.

Nanoscale characterization of bone-implant interface and biomechanical modulation of bone ingrowth

International Nuclear Information System (INIS)

Clark, Paul A.; Clark, Andrew M.; Rodriguez, Anthony; Hussain, Mohammad A.; Mao, Jeremy J.

2007-01-01

Bone-implant interface is characterized by an array of cells and macromolecules. This study investigated the nanomechancial properties of bone-implant interface using atomic force microscopy in vitro, and the mechanical modulation of implant bone ingrowth in vivo using bone histomorphometry. Upon harvest of screw-type titanium implants placed in vivo in the rabbit maxilla and proximal femur for 4 weeks, nanoindentation was performed in the bone-implant interface at 60-μm intervals radially from the implant surface. The average Young's Moduli (E) of the maxillary bone-implant interface was 1.13 ± 0.27 MPa, lacking significant differences at all intervals. In contrast, an increasing gradient of E was observed radially from the femur bone-implant interface: 0.87 ± 0.25 MPa to 2.24 ± 0.69 MPa, representing significant differences among several 60-μm intervals. In a separate experiment, bone healing was allowed for 6 weeks for proximal femur implants. The right femoral implant received axial cyclic loading at 200 mN and 1 Hz for 10 min/d over 12 days, whereas the left femoral implant served as control. Cyclic loading induced significantly higher bone volume, osteoblast numbers per endocortical bone surface, mineral apposition rate, and bone formation rate than controls. These data demonstrate nanoscale and microscale characterizations of bone-implant interface, and mechanical modulation of bone ingrowth surrounding titanium implants

Electric-field-controlled interface dipole modulation for Si-based memory devices.

Science.gov (United States)

Miyata, Noriyuki

2018-05-31

Various nonvolatile memory devices have been investigated to replace Si-based flash memories or emulate synaptic plasticity for next-generation neuromorphic computing. A crucial criterion to achieve low-cost high-density memory chips is material compatibility with conventional Si technologies. In this paper, we propose and demonstrate a new memory concept, interface dipole modulation (IDM) memory. IDM can be integrated as a Si field-effect transistor (FET) based memory device. The first demonstration of this concept employed a HfO 2 /Si MOS capacitor where the interface monolayer (ML) TiO 2 functions as a dipole modulator. However, this configuration is unsuitable for Si-FET-based devices due to its large interface state density (D it ). Consequently, we propose, a multi-stacked amorphous HfO 2 /1-ML TiO 2 /SiO 2 IDM structure to realize a low D it and a wide memory window. Herein we describe the quasi-static and pulse response characteristics of multi-stacked IDM MOS capacitors and demonstrate flash-type and analog memory operations of an IDM FET device.

Laser frequency modulation with electron plasma

Science.gov (United States)

Burgess, T. J.; Latorre, V. R.

1972-01-01

When laser beam passes through electron plasma its frequency shifts by amount proportional to plasma density. This density varies with modulating signal resulting in corresponding modulation of laser beam frequency. Necessary apparatus is relatively inexpensive since crystals are not required.

A Framework for Effective User Interface Design for Web-Based Electronic Commerce Applications

Directory of Open Access Journals (Sweden)

Justyna Burns

2001-01-01

Full Text Available Efficient delivery of relevant product information is increasingly becoming the central basis of competition between firms. The interface design represents the central component for successful information delivery to consumers. However, interface design for web-based information systems is probably more an art than a science at this point in time. Much research is needed to understand properties of an effective interface for electronic commerce. This paper develops a framework identifying the relationship between user factors, the role of the user interface and overall system success for web-based electronic commerce. The paper argues that web-based systems for electronic commerce have some similar properties to decision support systems (DSS and adapts an established DSS framework to the electronic commerce domain. Based on a limited amount of research studying web browser interface design, the framework identifies areas of research needed and outlines possible relationships between consumer characteristics, interface design attributes and measures of overall system success.

Local impedance measurement of an electrode/single-pentacene-grain interface by frequency-modulation scanning impedance microscopy

Energy Technology Data Exchange (ETDEWEB)

Kimura, Tomoharu; Yamada, Hirofumi, E-mail: h-yamada@kuee.kyoto-u.ac.jp [Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510 (Japan); Kobayashi, Kei [Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510 (Japan); The Hakubi Center for Advanced Research, Kyoto University, Kyoto 615-8520 (Japan)

2015-08-07

The device performances of organic thin film transistors are often limited by the metal–organic interface because of the disordered molecular layers at the interface and the energy barriers against the carrier injection. It is important to study the local impedance at the interface without being affected by the interface morphology. We combined frequency modulation atomic force microscopy with scanning impedance microscopy (SIM) to sensitively measure the ac responses of the interface to an ac voltage applied across the interface and the dc potential drop at the interface. By using the frequency-modulation SIM (FM-SIM) technique, we characterized the interface impedance of a Pt electrode and a single pentacene grain as a parallel circuit of a contact resistance and a capacitance. We found that the reduction of the contact resistance was caused by the reduction of the energy level mismatch at the interface by the FM-SIM measurements, demonstrating the usefulness of the FM-SIM technique for investigation of the local interface impedance without being affected by its morphology.

Ion acceleration in modulated electron beams

International Nuclear Information System (INIS)

Bonch-Osmolovskij, A.G.; Dolya, S.N.

1977-01-01

A method of ion acceleration in modulated electron beams is considered. Electron density and energy of their rotational motion are relatively low. However the effective ion-accelerating field is not less than 10 MeV/m. The electron and ion numbers in an individual bunch are also relatively small, although the number of produced bunches per time unit is great. Some aspects of realization of the method are considered. Possible parameters of the accelerator are given. At 50 keV electron energy and 1 kA beam current a modulation is realized at a wave length of 30 cm. The ion-accelerating field is 12 MeV/m. The bunch number is 2x10 3 in one pulse at a gun pulse duration of 2 μs. With a pulse repetition frequency of 10 2 Hz the number of accelerated ions can reach 10 13 -10 14 per second

Advanced Power Electronic Interfaces for Distributed Energy Systems Part 1: Systems and Topologies

Energy Technology Data Exchange (ETDEWEB)

Kramer, W.; Chakraborty, S.; Kroposki, B.; Thomas, H.

2008-03-01

This report summarizes power electronic interfaces for DE applications and the topologies needed for advanced power electronic interfaces. It focuses on photovoltaic, wind, microturbine, fuel cell, internal combustion engine, battery storage, and flywheel storage systems.

Ab initio transmission electron microscopy image simulations of coherent Ag-MgO interfaces

International Nuclear Information System (INIS)

Mogck, S.; Kooi, B.J.; Hosson, J.Th.M. de; Finnis, M.W.

2004-01-01

Density-functional theory calculations, within the plane-wave-ultrasoft pseudopotential framework, were performed in the projection for MgO and for the coherent (111) Ag-MgO polar interface. First-principles calculations were incorporated in high-resolution transmission electron microscopy (HRTEM) simulations by converting the charge density into electron scattering factors to examine the influence of charge transfer, charge redistribution at the interface, and ionicity on the dynamical electron scattering and on calculated HRTEM images. It is concluded that the ionicity of oxides and the charge redistribution at interfaces play a significant role in HRTEM image simulations. In particular, the calculations show that at oxygen-terminated (111) Ag-MgO interfaces the first oxygen layer at the interface is much brighter than that in calculations with neutral atoms, in agreement with experimental observations

Microfluidic hubs, systems, and methods for interface fluidic modules

Science.gov (United States)

Bartsch, Michael S; Claudnic, Mark R; Kim, Hanyoup; Patel, Kamlesh D; Renzi, Ronald F; Van De Vreugde, James L

2015-01-27

Embodiments of microfluidic hubs and systems are described that may be used to connect fluidic modules. A space between surfaces may be set by fixtures described herein. In some examples a fixture may set substrate-to-substrate spacing based on a distance between registration surfaces on which the respective substrates rest. Fluidic interfaces are described, including examples where fluid conduits (e.g. capillaries) extend into the fixture to the space between surfaces. Droplets of fluid may be introduced to and/or removed from microfluidic hubs described herein, and fluid actuators may be used to move droplets within the space between surfaces. Continuous flow modules may be integrated with the hubs in some examples.

Development of intelligent interface for simulation execution by module-based simulation system

International Nuclear Information System (INIS)

Yoshikawa, Hidekazu; Mizutani, Naoki; Shimoda, Hiroshi; Wakabayashi, Jiro

1988-01-01

An intelligent user support for the two phases of simulation execution was newly developed for Module-based Simulation System (MSS). The MSS has been in development as a flexible simulation environment to improve software productivity in complex, large-scale dynamic simulation of nuclear power plant. The AI programing by Smalltalk-80 was applied to materialize the two user-interface programs for (i) semantic diagnosis of the simulation program generated automatically by MSS, and (ii) consultation system by which user can set up consistent numerical input data files necessary for executing a MSS-generated program. Frame theory was utilized in those interface programs to represent the four knowledge bases, which are (i) usage information on module library in MSS and MSS-generated program, and (ii) expertise knowledge on nuclear power plant analysis such as material properties and reactor system configuration. Capabilities of those interface programs were confirmed by some example practice on LMFBR reactor dynamic calculation, and it was demonstrated that the knowledge-based systemization was effective to improve software work environment. (author)

Bulk and interface defects in electron irradiated InP

International Nuclear Information System (INIS)

Peng Chen; Sun Heng-hui

1989-01-01

Systematic studies on the structure of defects in InP caused by electron irradiation are conducted based on experimental measurements and theoretical calculations. The rates of introduction and annealing-out temperatures of In and P vancancies are estimated using proper theoretical models. These calculations reveal that after room temperature irradiation only complexes may exist. It is also supported by our experimental data that the sum of introducing rates of three detected levels are less than the theoretical value calculated for single vacancies. According to our equation on the relation between interface states and DLTS signal and from the results of computer calculation we believe that the broad peak appearing in the DLTS diagram before irradiation is related to interface states. Its disappearance after electron irradiation suggests the reduction of interface states; this is further confirmed by the reduction of surface recombination rate derived from the results of surface photovoltage measurement

SNOOP module CAMAC interface to the 168/E microprocessor

International Nuclear Information System (INIS)

Bernstein, D.; Carroll, J.T.; Mitnick, V.H.; Paffrath, L.; Parker, D.B.

1979-10-01

A pair of 168/E microprocessors will be used to meet the realtime computing requirements of the SLAC Hybrid Facility. A SNOOP module and 168/E Interface provide the link between the host computer and the microprocessors. By eavesdropping on normal CAMAC read operations, the SNOOP provides a direct data transfer from CAMAC to microprocessor memory. The host computer controls the processors using standard CAMAC programmed I/O to the SNOOP

Evolution of dense spatially modulated electron bunches

Science.gov (United States)

Balal, N.; Bratman, V. L.; Friedman, A.

2018-03-01

An analytical theory describing the dynamics of relativistic moving 1D electron pulses (layers) with the density modulation affected by a space charge has been revised and generalized for its application to the formation of dense picosecond bunches from linear accelerators with laser-driven photo injectors, and its good agreement with General Particle Tracer simulations has been demonstrated. Evolution of quasi-one-dimensional bunches (disks), for which the derived formulas predict longitudinal expansion, is compared with that for thin and long electron cylinders (threads), for which the excitation of non-linear waves with density spikes was found earlier by Musumeci et al. [Phys. Rev. Lett. 106(18), 184801 (2011)] and Musumeci et al. [Phys. Rev. Spec. Top. -Accel. Beams 16(10), 100701 (2013)]. Both types of bunches can be used for efficiency enhancement of THz sources based on the Doppler frequency up-shifted coherent spontaneous radiation of electrons. Despite the strong Coulomb repulsion, the periodicity of a preliminary modulation in dense 1D layers persists during their expansion in the most interesting case of a relatively small change in particle energy. However, the period of modulation increases and its amplitude decreases in time. In the case of a large change in electron energy, the uniformity of periodicity is broken due to different relativistic changes in longitudinal scales along the bunch: the "period" of modulation decreases and its amplitude increases from the rear to the front boundary. Nevertheless, the use of relatively long electron bunches with a proper preliminary spatial modulation of density can provide a significantly higher power and a narrower spectrum of coherent spontaneous radiation of dense bunches than in the case of initially short single bunches with the same charge.

Test results for triple-modulation radar electronics with improved range disambiguation

Energy Technology Data Exchange (ETDEWEB)

Pollastrone, Fabio, E-mail: fabio.pollastrone@enea.it; Neri, Carlo

2015-10-15

Highlights: • A new digital radar electronic system based on triple-modulation has been developed. • The triple-modulation system uses an improved algorithm for the range-disambiguation. • The new radar electronics has been applied in the IVVS optical radar prototype for ITER. • The performances obtained with IVVS double and triple-modulation were compared. - Abstract: The In Vessel Viewing System (IVVS) is an optical radar with sub milimetrical resolution that will be used for imaging and metrology pourposes in ITER. The electronics of the system is based on a Digital Radar Electronics developed in ENEA Frascati laboratories during the past years. Until the present study, the system was based on amplitude modulation technique having double-modulation frequency. The power of the laser is sinusoidally modulated and the distance of the points scanned by the laser beam is obtained measuring the phase difference between outgoing and echo signals. Recently a triple-modulation radar electronics version and an algorithm able to solve the range disambiguation were developed. The aim of the upgrade was the increase of the robustness in the range disambiguation. The paper briefly describes the updates carried out on the Digital Radar Electronics and extensively the test results obtained by comparing the performance of the triple modulation versus the double modulation techniques.

Conditioning of Si-interfaces by wet-chemical oxidation: Electronic interface properties study by surface photovoltage measurements

Energy Technology Data Exchange (ETDEWEB)

Angermann, Heike, E-mail: angermann@helmholtz-berlin.de

2014-09-01

Highlights: • Determination of electronic interface properties by contact-less surface photovoltage (SPV) technique. • Systematic correlations of substrate morphology and surface electronic properties. • Optimization of surface pre-treatment for flat, saw damage etched, and textured Si solar cell substrates. • Ultra-thin passivating Si oxide layers with low densities of rechargeable states by wet-chemical oxidation and subsequent annealing. • Environmentally acceptable processes, utilizing hot water, diluted HCl, or ozone low cost alternative to current approaches with concentrated chemicals. • The effect of optimized wet-chemical pre-treatments can be preserved during subsequent layer deposition. - Abstract: The field-modulated surface photovoltage (SPV) method, a very surface sensitive technique, was utilized to determine electronic interface properties on wet-chemically oxidized and etched silicon (Si) interfaces. The influence of preparation-induced surface micro-roughness and un-stoichiometric oxides on the resulting the surface charge, energetic distribution D{sub it}(E), and density D{sub it,min} of rechargeable states was studied by simultaneous, spectroscopic ellipsometry (SE) measurements on polished Si(111) and Si(100) substrates. Based on previous findings and new research, a study of conventional and newly developed wet-chemical oxidation methods was established, correlating the interactions between involved oxidizing and etching solutions and the initial substrate morphology to the final surface conditioning. It is shown, which sequences of wet-chemical oxidation and oxide removal, have to be combined in order to achieve atomically smooth, hydrogen terminated surfaces, as well as ultra-thin oxide layers with low densities of rechargeable states on flat, saw damage etched, and textured Si substrates, as commonly applied in silicon device and solar cell manufacturing. These conventional strategies for wet-chemical pre-treatment are mainly

Conditioning of Si-interfaces by wet-chemical oxidation: Electronic interface properties study by surface photovoltage measurements

International Nuclear Information System (INIS)

Angermann, Heike

2014-01-01

Highlights: • Determination of electronic interface properties by contact-less surface photovoltage (SPV) technique. • Systematic correlations of substrate morphology and surface electronic properties. • Optimization of surface pre-treatment for flat, saw damage etched, and textured Si solar cell substrates. • Ultra-thin passivating Si oxide layers with low densities of rechargeable states by wet-chemical oxidation and subsequent annealing. • Environmentally acceptable processes, utilizing hot water, diluted HCl, or ozone low cost alternative to current approaches with concentrated chemicals. • The effect of optimized wet-chemical pre-treatments can be preserved during subsequent layer deposition. - Abstract: The field-modulated surface photovoltage (SPV) method, a very surface sensitive technique, was utilized to determine electronic interface properties on wet-chemically oxidized and etched silicon (Si) interfaces. The influence of preparation-induced surface micro-roughness and un-stoichiometric oxides on the resulting the surface charge, energetic distribution D it (E), and density D it,min of rechargeable states was studied by simultaneous, spectroscopic ellipsometry (SE) measurements on polished Si(111) and Si(100) substrates. Based on previous findings and new research, a study of conventional and newly developed wet-chemical oxidation methods was established, correlating the interactions between involved oxidizing and etching solutions and the initial substrate morphology to the final surface conditioning. It is shown, which sequences of wet-chemical oxidation and oxide removal, have to be combined in order to achieve atomically smooth, hydrogen terminated surfaces, as well as ultra-thin oxide layers with low densities of rechargeable states on flat, saw damage etched, and textured Si substrates, as commonly applied in silicon device and solar cell manufacturing. These conventional strategies for wet-chemical pre-treatment are mainly based on

Electronic Processes at Organic−Organic Interfaces: Insight from Modeling and Implications for Opto-electronic Devices †

KAUST Repository

Beljonne, David

2011-02-08

We report on the recent progress achieved in modeling the electronic processes that take place at interfaces between π-conjugated materials in organic opto-electronic devices. First, we provide a critical overview of the current computational techniques used to assess the morphology of organic: organic heterojunctions; we highlight the compromises that are necessary to handle large systems and multiple time scales while preserving the atomistic details required for subsequent computations of the electronic and optical properties. We then review some recent theoretical advances in describing the ground-state electronic structure at heterojunctions between donor and acceptor materials and highlight the role played by charge-transfer and long-range polarization effects. Finally, we discuss the modeling of the excited-state electronic structure at organic:organic interfaces, which is a key aspect in the understanding of the dynamics of photoinduced electron-transfer processes. © 2010 American Chemical Society.

Linking Informal and Formal Electronics Recycling via an Interface Organization

Directory of Open Access Journals (Sweden)

Yoshiaki Totoki

2013-07-01

Full Text Available Informal recycling of electronics in the developing world has emerged as a new global environmental concern. The primary approach to address this problem has been command-and-control policies that ban informal recycling and international trade in electronic scrap. These bans are difficult to enforce and also have negative effects by reducing reuse of electronics, and employment for people in poverty. An alternate approach is to link informal and formal sectors so as to maintain economic activity while mitigating environmental damages. This article explores the idea of an interface organization that purchases components and waste from informal dismantlers and passes them on to formal processors. Environmental, economic and social implications of interface organizations are discussed. The main environmental questions to resolve are what e-scrap components should be targeted by the interface organization, i.e., circuit boards, wires, and/or plastic parts. Economically, when formal recycling is more profitable (e.g., for circuit boards, the interface organization is revenue positive. However, price subsidies are needed for copper wires and residual waste to incentivize informal dismantlers to turn in for formal processing. Socially, the potential for corruption and gaming of the system is critical and needs to be addressed.

Electronic structure of ferromagnet-insulator interfaces: Fe/MgO and Co/MgO

Energy Technology Data Exchange (ETDEWEB)

Mueller, M.

2007-07-11

In this thesis the electronic structure of Fe/MgO{sub x} and Co/MgO{sub x} ferromagnet-insulator interfaces, representing material systems which are widely used in magnetic tunnel junctions, is studied by means of spin- and angle-resolved photoemission spectroscopy. The photoemission studies focus particularly on the response of the ferromagnetic electronic system in contact with MgO of varying stoichiometries, as this reflects the mechanisms of metal-oxide bonding at real ferromagnet-insulator interfaces. The correlation between chemical bonding and electronic structure formation is analyzed by combining information from core- and valence-band photoemission spectroscopy. The spectral features are compared to band structure calculations, which are performed using the SPR-KKR method. The Fe/MgO and Co/MgO systems are prepared by molecular beam epitaxy under ultrahigh vacuum conditions on well-defined (4 x 6) GaAs(001) substrates. A structural analysis by means of low-energy electron diffraction (LEED) reveals their body-centered cubic crystalline structure, whereas the chemical characterization by Auger electron spectroscopy is used to quantify the chemical environment at the sample surfaces. The magnetic analysis, using the magneto-optical Kerr effect, reveals the uniaxial anisotropy of the ferromagnetic layers. A crucial parameter is given by the MgO degree of oxidation, which is addressed by means of core-level spectroscopy and quantified by suitable fitting procedures of the Mg 2p core level. The results of the photoemission experiments show, that the electronic structure of the Fe/MgO and Co/MgO ferromagnet/insulator interfaces and, consequently, the interfacial spin polarization are sensitively controlled by the interface chemistry. In particular, three distinct scenarios are identified: the nearly stoichiometric, the oxygen-deficient and the over-oxidized ferromagnet/MgO interface. Each case is defined by innate characteristics of the electronic structure at

User Interface of MUDR Electronic Health Record

Czech Academy of Sciences Publication Activity Database

Hanzlíček, Petr; Špidlen, Josef; Heroutová, Helena; Nagy, Miroslav

2005-01-01

Roč. 74, - (2005), s. 221-227 ISSN 1386-5056 R&D Projects: GA MŠk LN00B107 Institutional research plan: CEZ:AV0Z10300504 Keywords : electronic health record * user interface * data entry * knowledge base Subject RIV: BB - Applied Statistics, Operational Research Impact factor: 1.374, year: 2005

A unique metal-semiconductor interface and resultant electron transfer phenomenon

OpenAIRE

Taft, S. L.

2012-01-01

An unusual electron transfer phenomenon has been identified from an n-type semiconductor to Schottky metal particles, the result of a unique metal semiconductor interface that results when the metal particles are grown from the semiconductor substrate. The unique interface acts as a one-way (rectifying) open gateway and was first identified in reduced rutile polycrystalline titanium dioxide (an n-type semiconductor) to Group VIII (noble) metal particles. The interface significantly affects th...

Scattering theory of ballistic-electron-emission microscopy at nonepitaxial interfaces

International Nuclear Information System (INIS)

Smith, D. L.; Kozhevnikov, M.; Lee, E. Y.; Narayanamurti, V.

2000-01-01

We present an interface scattering model to describe ballistic-electron-emission microscopy (BEEM) at nonepitaxial metal/semiconductor interfaces. The model starts with a Hamiltonian consisting of the sum of two terms: one term, H 0 , describes an ideal interface for which the interface parallel component of wave vector is a good quantum number, and the second term, δH, describes interfacial scattering centers. The eigenstates of H 0 consist of an incident and a reflected part in the metal and a transmitted part in the semiconductor. The three components of each eigenstate have the same interface parallel wave vector. Because tunneling preferentially weights forward-directed states, the interface parallel component of wave vector is small for the H 0 eigenstates that are initially populated with high probability in BEEM. δH scatters electrons between the eigenstates of H 0 . The scattering conserves energy, but not the interface parallel wave vector. In the final state of the scattering process, states with a large interface parallel wave vector can be occupied with reasonable probability. If scattering is weak, so that the parallel wave vector is nearly conserved, the calculated collector current into conduction-band valleys with zero parallel wave vector at the minimum, such as the Γ valley for GaAs(100), is much larger than the calculated collector current into conduction-band valleys with a large parallel wave vector at the minimum, such as the L valleys for GaAs(100). However, if scattering is strong, the injected electron flux distribution is redistributed and valleys with zero interface transverse wave vector at their energy minimum are not preferentially weighted. Instead, the weighting varies as the density of final states for the scattering process so that, for example, the calculated L-channel collector current is much larger than the calculated Γ-channel collector current for GaAs(100). Interfacial scattering reduces the overall magnitude of the

Interfacing Detectors to Triggers And DAQ Electronics; TOPICAL

International Nuclear Information System (INIS)

Crosetto, Dario B.

1999-01-01

The complete design of the front-end electronics interfacing LHCb detectors, Level-0 trigger and higher levels of trigger with flexible configuration parameters has been made for (a) ASIC implementation, and (b) FPGA implementation. The importance of approaching designs in technology-independent form becomes essential with the actual rapid electronics evolution. Being able to constrain the entire design to a few types of replicated components: (a) the fully programmable 3D-Flow system, and (b) the configurable front-end circuit described in this article, provides even further advantages because only one or two types of components will need to migrate to the newer technologies. To base on today's technology the design of a system such as the LHCb project that is to begin working in 2006 is not cost-effective. The effort required to migrate to a higher-performance will, in that case, be almost equivalent to completely redesigning the architecture from scratch. The proposed technology independent design with the current configurable front-end module described in this article and the scalable 3D-Flow fully programmable system described elsewhere, based on the study of the evolution of electronics during the past few years and the forecasted advances in the years to come, aims to provide a technology-independent design which lends itself to any technology at any time. In this case, technology independence is based mainly on generic-HDL reusable code which allows a very rapid realization of the state-of-the-art circuits in terms of gate density, power dissipation, and clock frequency. The design of four trigger towers presently fits into an OR3T30 FPGA. Preliminary test results (provided in this paper) meet the functional requirements of LHCb and provide sufficient flexibility to introduce future changes. The complete system design is also provided along with the integration of the front-end design in the entire system and the cost and dimension of the electronics

Communication interface and graphic module for audiometry equipment.

Science.gov (United States)

Gutiérrez Martinez, Josefina; Barraza López, Fernando; Guadarrama Lara, Alberto; Núñez Gaona, Marco Antonio; Delgado Esquerra, Ruth; Gutiérrez Farfán, Ileana

2009-01-01

The National Rehabilitation Institute (INR) in Mexico City purchased 12 Madsen Orbiter 922 audiometers in 2006. While this audiometer is excellent for diagnosing the degree and type of hearing loss, it has presented problems in transfering, saving and printing the results of special tests and logoaudiometry from audiometer to workstation with the NOAH-3 system. The data are lost when the audiometer is turned off or a new patient is captured. There is no database storing and, shortly after the results have been printed on the thermal paper, the audiograms are erased. This problem was addressed by designing and implementing the InterAudio (AAMS) communication and graphical interface. The limitations and scope of the Automatic Audiometric Measurement System were analyzed, then a search of technical information was performed that included the resources for designing, developing and implementing the transfer interface, the user's graphical module requirements, and the tools for printing and saving the study.

Freezing hot electrons. Electron transfer and solvation dynamics at D{sub 2}O and NH{sub 3}-metal interfaces

Energy Technology Data Exchange (ETDEWEB)

Staehler, A.J.

2007-05-15

The present work investigates the electron transfer and solvation dynamics at the D{sub 2}O/Cu(111), D{sub 2}O/Ru(001), and NH{sub 3}/Cu(111) interfaces using femtosecond time-resolved two-photon photoelectron spectroscopy. Within this framework, the influence of the substrate, adsorbate structure and morphology, solvation site, coverage, temperature, and solvent on the electron dynamics are studied, yielding microscopic insight into the underlying fundamental processes. Transitions between different regimes of ET, substrate-dominated, barrier-determined, strong, and weak coupling are observed by systematic variation of the interfacial properties and development of empirical model descriptions. It is shown that the fundamental steps of the interfacial electron dynamics are similar for all investigated systems: Metal electrons are photoexcited to unoccupied metal states and transferred into the adlayer via the adsorbate's conduction band. The electrons localize at favorable sites and are stabilized by reorientations of the surrounding polar solvent molecules. Concurrently, they decay back two the metal substrate, as it offers a continuum of unoccupied states. However, the detailed characteristics vary for the different investigated interfaces: For amorphous ice-metal interfaces, the electron transfer is initially, right after photoinjection, dominated by the substrate's electronic surface band structure. With increasing solvation, a transient barrier evolves at the interface that increasingly screens the electrons from the substrate. Tunneling through this barrier becomes the rate-limiting step for ET. The competition of electron decay and solvation leads to lifetimes of the solvated electrons in the order of 100 fs. Furthermore, it is shown that the electrons bind in the bulk of the ice layers, but on the edges of adsorbed D{sub 2}O clusters and that the ice morphology strongly influences the electron dynamics. For the amorphous NH{sub 3}/Cu(111

Transient and modulated charge separation at CuInSe{sub 2}/C{sub 60} and CuInSe{sub 2}/ZnPc hybrid interfaces

Energy Technology Data Exchange (ETDEWEB)

Morzé, Natascha von, E-mail: natascha.von_morze@helmholtz-berlin.de; Dittrich, Thomas, E-mail: dittrich@helmholtz-berlin.de; Calvet, Wolfram, E-mail: wolfram.calvet@helmholtz-berlin.de; Lauermann, Iver, E-mail: iver.lauermann@helmholtz-berlin.de; Rusu, Marin, E-mail: rusu@helmholtz-berlin.de

2017-02-28

Highlights: • Surface physical properties of non- and Na-treated CuInSe{sub 2} layers studied. • Evidence of exciton dissociation and charge separation at CuInSe{sub 2}/ZnPc interface. • Strong band bending at the CuInSe{sub 2} surface in contact with C{sub 60} observed. • No evidence for exciton dissociation at the CuInSe{sub 2}/C{sub 60} interface found. • Cu-poor phase at CuInSe{sub 2}/organic interface crucial for charge separation. - Abstract: Spectral dependent charge transfer and exciton dissociation have been investigated at hybrid interfaces between inorganic polycrystalline CuInSe{sub 2} (untreated and Na-conditioned) thin films and organic C{sub 60} as well as zinc phthalocyanine (ZnPc) layers by transient and modulated surface photovoltage measurements. The stoichiometry and electronic properties of the bare CuInSe{sub 2} surface were characterized by photoelectron spectroscopy which revealed a Cu-poor phase with n-type features. After the deposition of the C{sub 60} layer, a strong band bending at the CuInSe{sub 2} surface was observed. Evidence for dissociation of excitons followed by charge separation was found at the CuInSe{sub 2}/ZnPc interface. The Cu-poor layer at the CuInSe{sub 2} surface was found to be crucial for transient and modulated charge separation at CuInSe{sub 2}/organic hybrid interfaces.

Electronic Processes at Organic−Organic Interfaces: Insight from Modeling and Implications for Opto-electronic Devices †

KAUST Repository

Beljonne, David; Cornil, Jérôme; Muccioli, Luca; Zannoni, Claudio; Brédas, Jean-Luc; Castet, Frédéric

2011-01-01

We report on the recent progress achieved in modeling the electronic processes that take place at interfaces between π-conjugated materials in organic opto-electronic devices. First, we provide a critical overview of the current computational

Electronic structure of hybrid interfaces for polymer-based electronics

International Nuclear Information System (INIS)

Fahlman, M; Crispin, A; Crispin, X; Henze, S K M; Jong, M P de; Osikowicz, W; Tengstedt, C; Salaneck, W R

2007-01-01

The fundamentals of the energy level alignment at anode and cathode electrodes in organic electronics are described. We focus on two different models that treat weakly interacting organic/metal (and organic/organic) interfaces: the induced density of interfacial states model and the so-called integer charge transfer model. The two models are compared and evaluated, mainly using photoelectron spectroscopy data of the energy level alignment of conjugated polymers and molecules at various organic/metal and organic/organic interfaces. We show that two different alignment regimes are generally observed: (i) vacuum level alignment, which corresponds to the lack of vacuum level offsets (Schottky-Mott limit) and hence the lack of charge transfer across the interface, and (ii) Fermi level pinning where the resulting work function of an organic/metal and organic/organic bilayer is independent of the substrate work function and an interface dipole is formed due to charge transfer across the interface. We argue that the experimental results are best described by the integer charge transfer model which predicts the vacuum level alignment when the substrate work function is above the positive charge transfer level and below the negative charge transfer level of the conjugated material. The model further predicts Fermi level pinning to the positive (negative) charge transfer level when the substrate work function is below (above) the positive (negative) charge transfer level. The nature of the integer charge transfer levels depend on the materials system: for conjugated large molecules and polymers, the integer charge transfer states are polarons or bipolarons; for small molecules' highest occupied and lowest unoccupied molecular orbitals and for crystalline systems, the relevant levels are the valence and conduction band edges. Finally, limits and further improvements to the integer charge transfer model are discussed as well as the impact on device design. (topical review)

Control-grid electron gun as a source of modulated electron beam for a collective accelerator

International Nuclear Information System (INIS)

Bakumenko, A.A.; Belikov, V.V.; Zvyagintsev, A.V.; Lyul'chenko, V.I.; Lymar', A.G.; Martynenko, P.A.; Suryadnyj, A.V.

1989-01-01

Structure is described and experimental results of investigations into an electron gun with transverse beam compression and control grid are presented. The pulse trailing edge is formed by a sectioned discharger. A modulated electron beam with the following parameters: 110 keV beam energy, 70 A current amplitude, 3-8 MHz modulation frequency, 100% modulation depth, ≅8-6 mm minimal beam diameter, ≅ 10μs pulse duration, 3% pulse top non-uniformity, more than 200 compression degree is obtained when introducing the positive feedback in auto-generator regime to the gun supply circuit. Further it is supposed to use the developed electron gun for heavy ion acceleration by a field of space charge of a modulated electron beam in a corrugated liner. It should be underlined that power supply of such an accelerator does not require powerful outside HF generator. 5 refs.; 1 fig

Magnet measurement interfacing to the G-64 Euro standard bus and testing G-64 modules

International Nuclear Information System (INIS)

Hogrefe, R.L.

1995-01-01

The Magnet Measurement system utilizes various modules with a G-64 Euro (Gespac) Standard Interface. All modules are designed to be software controlled, normally under the constraints of the OS-9 operating system with all data transfers to a host computer accomplished by a serial link

Conversational module-based simulation system as a human interface to versatile dynamic simulation of nuclear power plant

International Nuclear Information System (INIS)

Yoshikawa, H.; Nakaya, K.; Wakabayashi, J.

1986-01-01

A new conversational simulation system is proposed which aims at effective re-utilization of software resources as module database, and conducting versatile simulations easily by automatic module integration with the help of user-friendly interfaces. The whole simulation system is composed of the four parts: master module library and pre-compiler system as the core system, while module database management system and simulation execution support system for the user interfaces. Basic methods employed in the system are mentioned with their knowledge representation and the relationship with the human information processing. An example practice of an LMFBR reactor dynamic simulation by the system demonstrated its capability to integrate a large simulation program and the related input/output files automatically by a single user

Electronic charge rearrangement at metal/organic interfaces induced by weak van der Waals interactions

Science.gov (United States)

Ferri, Nicola; Ambrosetti, Alberto; Tkatchenko, Alexandre

2017-07-01

Electronic charge rearrangements at interfaces between organic molecules and solid surfaces play a key role in a wide range of applications in catalysis, light-emitting diodes, single-molecule junctions, molecular sensors and switches, and photovoltaics. It is common to utilize electrostatics and Pauli pushback to control the interface electronic properties, while the ubiquitous van der Waals (vdW) interactions are often considered to have a negligible direct contribution (beyond the obvious structural relaxation). Here, we apply a fully self-consistent Tkatchenko-Scheffler vdW density functional to demonstrate that the weak vdW interactions can induce sizable charge rearrangements at hybrid metal/organic systems (HMOS). The complex vdW correlation potential smears out the interfacial electronic density, thereby reducing the charge transfer in HMOS, changes the interface work functions by up to 0.2 eV, and increases the interface dipole moment by up to 0.3 Debye. Our results suggest that vdW interactions should be considered as an additional control parameter in the design of hybrid interfaces with the desired electronic properties.

Model of two-dimensional electron gas formation at ferroelectric interfaces

Energy Technology Data Exchange (ETDEWEB)

Aguado-Puente, P.; Bristowe, N. C.; Yin, B.; Shirasawa, R.; Ghosez, Philippe; Littlewood, P. B.; Artacho, Emilio

2015-07-01

The formation of a two-dimensional electron gas at oxide interfaces as a consequence of polar discontinuities has generated an enormous amount of activity due to the variety of interesting effects it gives rise to. Here, we study under what circumstances similar processes can also take place underneath ferroelectric thin films. We use a simple Landau model to demonstrate that in the absence of extrinsic screening mechanisms, a monodomain phase can be stabilized in ferroelectric films by means of an electronic reconstruction. Unlike in the LaAlO3/SrTiO3 heterostructure, the emergence with thickness of the free charge at the interface is discontinuous. This prediction is confirmed by performing first-principles simulations of free-standing slabs of PbTiO3. The model is also used to predict the response of the system to an applied electric field, demonstrating that the two-dimensional electron gas can be switched on and off discontinuously and in a nonvolatile fashion. Furthermore, the reversal of the polarization can be used to switch between a two-dimensional electron gas and a two-dimensional hole gas, which should, in principle, have very different transport properties. We discuss the possible formation of polarization domains and how such configuration competes with the spontaneous accumulation of free charge at the interfaces.

Interfacial Chemistry-Induced Modulation of Schottky Barrier Heights: In Situ Measurements of the Pt-Amorphous Indium Gallium Zinc Oxide Interface Using X-ray Photoelectron Spectroscopy.

Science.gov (United States)

Flynn, Brendan T; Oleksak, Richard P; Thevuthasan, Suntharampillai; Herman, Gregory S

2018-01-31

A method to understand the role of interfacial chemistry on the modulation of Schottky barrier heights for platinum and amorphous indium gallium zinc oxide (a-IGZO) interfaces is demonstrated through thermal processing and background ambient pressure control. In situ X-ray photoelectron spectroscopy was used to characterize the interfacial chemistries that modulate barrier heights in this system. The primary changes were a significant chemical reduction of indium, from In 3+ to In 0 , that occurs during deposition of Pt on to the a-IGZO surface in ultrahigh vacuum. Postannealing and controlling the background ambient O 2 pressure allows further tuning of the reduction of indium and the corresponding Schottky barrier heights from 0.17 to 0.77 eV. Understanding the detailed interfacial chemistries at Pt/a-IGZO interfaces may allow for improved electronic device performance, including Schottky diodes, memristors, and metal-semiconductor field-effect transistors.

Ferroelectric Polarization-Modulated Interfacial Fine Structures Involving Two-Dimensional Electron Gases in Pb(Zr,Ti)O3/LaAlO3/SrTiO3 Heterostructures.

Science.gov (United States)

Wang, Shuangbao; Bai, Yuhang; Xie, Lin; Li, Chen; Key, Julian D; Wu, Di; Wang, Peng; Pan, Xiaoqing

2018-01-10

Interfacial fine structures of bare LaAlO 3 /SrTiO 3 (LAO/STO) heterostructures are compared with those of LAO/STO heterostructures capped with upward-polarized Pb(Zr 0.1 ,Ti 0.9 )O 3 (PZT up ) or downward-polarized Pb(Zr 0.5 ,Ti 0.5 )O 3 (PZT down ) overlayers by aberration-corrected scanning transmission electron microscopy experiments. By combining the acquired electron energy-loss spectroscopy mapping, we are able to directly observe electron transfer from Ti 4+ to Ti 3+ and ionic displacements at the interface of bare LAO/STO and PZT down /LAO/STO heterostructure unit cell by unit cell. No evidence of Ti 3+ is observed at the interface of the PZT up /LAO/STO samples. Furthermore, the confinement of the two-dimensional electron gas (2DEG) at the interface is determined by atomic-column spatial resolution. Compared with the bare LAO/STO interface, the 2DEG density at the LAO/STO interface is enhanced or depressed by the PZT down or PZT up overlayer, respectively. Our microscopy studies shed light on the mechanism of ferroelectric modulation of interfacial transport at polar/nonpolar oxide heterointerfaces, which may facilitate applications of these materials as nonvolatile memory.

Task-induced frequency modulation features for brain-computer interfacing.

Science.gov (United States)

Jayaram, Vinay; Hohmann, Matthias; Just, Jennifer; Schölkopf, Bernhard; Grosse-Wentrup, Moritz

2017-10-01

Task-induced amplitude modulation of neural oscillations is routinely used in brain-computer interfaces (BCIs) for decoding subjects' intents, and underlies some of the most robust and common methods in the field, such as common spatial patterns and Riemannian geometry. While there has been some interest in phase-related features for classification, both techniques usually presuppose that the frequencies of neural oscillations remain stable across various tasks. We investigate here whether features based on task-induced modulation of the frequency of neural oscillations enable decoding of subjects' intents with an accuracy comparable to task-induced amplitude modulation. We compare cross-validated classification accuracies using the amplitude and frequency modulated features, as well as a joint feature space, across subjects in various paradigms and pre-processing conditions. We show results with a motor imagery task, a cognitive task, and also preliminary results in patients with amyotrophic lateral sclerosis (ALS), as well as using common spatial patterns and Laplacian filtering. The frequency features alone do not significantly out-perform traditional amplitude modulation features, and in some cases perform significantly worse. However, across both tasks and pre-processing in healthy subjects the joint space significantly out-performs either the frequency or amplitude features alone. This result only does not hold for ALS patients, for whom the dataset is of insufficient size to draw any statistically significant conclusions. Task-induced frequency modulation is robust and straight forward to compute, and increases performance when added to standard amplitude modulation features across paradigms. This allows more information to be extracted from the EEG signal cheaply and can be used throughout the field of BCIs.

Task-induced frequency modulation features for brain-computer interfacing

Science.gov (United States)

Jayaram, Vinay; Hohmann, Matthias; Just, Jennifer; Schölkopf, Bernhard; Grosse-Wentrup, Moritz

2017-10-01

Objective. Task-induced amplitude modulation of neural oscillations is routinely used in brain-computer interfaces (BCIs) for decoding subjects’ intents, and underlies some of the most robust and common methods in the field, such as common spatial patterns and Riemannian geometry. While there has been some interest in phase-related features for classification, both techniques usually presuppose that the frequencies of neural oscillations remain stable across various tasks. We investigate here whether features based on task-induced modulation of the frequency of neural oscillations enable decoding of subjects’ intents with an accuracy comparable to task-induced amplitude modulation. Approach. We compare cross-validated classification accuracies using the amplitude and frequency modulated features, as well as a joint feature space, across subjects in various paradigms and pre-processing conditions. We show results with a motor imagery task, a cognitive task, and also preliminary results in patients with amyotrophic lateral sclerosis (ALS), as well as using common spatial patterns and Laplacian filtering. Main results. The frequency features alone do not significantly out-perform traditional amplitude modulation features, and in some cases perform significantly worse. However, across both tasks and pre-processing in healthy subjects the joint space significantly out-performs either the frequency or amplitude features alone. This result only does not hold for ALS patients, for whom the dataset is of insufficient size to draw any statistically significant conclusions. Significance. Task-induced frequency modulation is robust and straight forward to compute, and increases performance when added to standard amplitude modulation features across paradigms. This allows more information to be extracted from the EEG signal cheaply and can be used throughout the field of BCIs.

Structures and electronics of buried and unburied semiconductor interfaces

International Nuclear Information System (INIS)

Kamiya, Itaru

2011-01-01

The structure of interfaces plays an important role in determining the electronic properties of semiconductor nanostructures. Here, such examples are shown and discussed using semiconductor nanostructures prepared by molecular beam epitaxy and colloidal synthesis.

Advanced understanding on electronic structure of molecular semiconductors and their interfaces

Science.gov (United States)

Akaike, Kouki

2018-03-01

Understanding the electronic structure of organic semiconductors and their interfaces is critical to optimizing functionalities for electronics applications, by rational chemical design and appropriate combination of device constituents. The unique electronic structure of a molecular solid is characterized as (i) anisotropic electrostatic fields that originate from molecular quadrupoles, (ii) interfacial energy-level lineup governed by simple electrostatics, and (iii) weak intermolecular interactions that make not only structural order but also energy distributions of the frontier orbitals sensitive to atmosphere and interface growth. This article shows an overview on these features with reference to the improved understanding of the orientation-dependent electronic structure, comprehensive mechanisms of molecular doping, and energy-level alignment. Furthermore, the engineering of ionization energy by the control of the electrostatic fields and work function of practical electrodes by contact-induced doping is briefly described for the purpose of highlighting how the electronic structure impacts the performance of organic devices.

Advanced Power Electronics Interfaces for Distributed Energy Workshop Summary: August 24, 2006, Sacramento, California

Energy Technology Data Exchange (ETDEWEB)

Treanton, B.; Palomo, J.; Kroposki, B.; Thomas, H.

2006-10-01

The Advanced Power Electronics Interfaces for Distributed Energy Workshop, sponsored by the California Energy Commission Public Interest Energy Research program and organized by the National Renewable Energy Laboratory, was held Aug. 24, 2006, in Sacramento, Calif. The workshop provided a forum for industry stakeholders to share their knowledge and experience about technologies, manufacturing approaches, markets, and issues in power electronics for a range of distributed energy resources. It focused on the development of advanced power electronic interfaces for distributed energy applications and included discussions of modular power electronics, component manufacturing, and power electronic applications.

Interface models

DEFF Research Database (Denmark)

Ravn, Anders P.; Staunstrup, Jørgen

1994-01-01

This paper proposes a model for specifying interfaces between concurrently executing modules of a computing system. The model does not prescribe a particular type of communication protocol and is aimed at describing interfaces between both software and hardware modules or a combination of the two....... The model describes both functional and timing properties of an interface...

Dama annual modulation from electron recoils

OpenAIRE

Foot, R.

2018-01-01

Plasma dark matter, which arises in dissipative dark matter models, can give rise to large annual modulation signals from keV electron recoils. Previous work has argued that the DAMA annual modulation signal might be explained in such a scenario. Detailed predictions are difficult due to the inherent complexities involved in modelling the halo plasma interactions with Earth bound dark matter. Here, we consider a simplified phenomenological model for the dark matter density and temperature nea...

Software for Data Acquisition AMC Module with PCI Express Interface

CERN Document Server

Szachowalow, S; Makowski, D; Butkowski, L

2010-01-01

Free Electron Laser in Hamburg (FLASH) and XRay Free Electron Laser (XFEL) are linear accelerators that require a complex and accurate Low Level Radio Frequency (LLRF) control system. Currently working systems are based on aged Versa Module Eurocard (VME) architecture. One of the alternatives for the VME bus is the Advanced Telecommunications and Computing Architecture (ATCA) standard. The ATCA based LLRF controller mainly consists of a few ATCA carrier boards and several Advanced Mezzanine Cards (AMC). AMC modules are available in variety of functions such as: ADC, DAC, data storage, data links and even CPU cards. This paper focuses on the software that allows user to collect and plot the data from commercially available TAMC900 board.

Energy level alignment and electron transport through metal/organic contacts. From interfaces to molecular electronics

Energy Technology Data Exchange (ETDEWEB)

Abad, Enrique

2013-07-01

A new calculational approach to describing metal/organic interfaces. A valuable step towards a better understanding of molecular electronics. Nominated as an outstanding contribution by the Autonomous University of Madrid. In recent years, ever more electronic devices have started to exploit the advantages of organic semiconductors. The work reported in this thesis focuses on analyzing theoretically the energy level alignment of different metal/organic interfaces, necessary to tailor devices with good performance. Traditional methods based on density functional theory (DFT), are not appropriate for analyzing them because they underestimate the organic energy gap and fail to correctly describe the van der Waals forces. Since the size of these systems prohibits the use of more accurate methods, corrections to those DFT drawbacks are desirable. In this work a combination of a standard DFT calculation with the inclusion of the charging energy (U) of the molecule, calculated from first principles, is presented. Regarding the dispersion forces, incorrect long range interaction is substituted by a van der Waals potential. With these corrections, the C60, benzene, pentacene, TTF and TCNQ/Au(111) interfaces are analyzed, both for single molecules and for a monolayer. The results validate the induced density of interface states model.

Design of a Flexible Hardware Interface for Multiple Remote Electronic practical Experiments of Virtual Laboratory

Directory of Open Access Journals (Sweden)

Farah Said

2012-03-01

Full Text Available The objective of this work is to present a new design of a Flexible Hardware Interface (FHI based on PID control techniques to use in a virtual laboratory. This flexible hardware interface allows the easy implementation of different and multiple remote electronic practical experiments for undergraduate engineering classes. This interface can be viewed as opened hardware architecture to easily develop simple or complex remote experiments in the electronic domain. The philosophy of the use of this interface can also be expanded to many other domains as optic experiments for instance. It is also demonstrated that software can be developed to enable remote measurements of electronic circuits or systems using only Web site Interface. Using standard browsers (such as Internet explorer, Firefox, Chrome or Safari, different students can have a remote access to different practical experiments at a time.

Toward an autonomous brain machine interface: integrating sensorimotor reward modulation and reinforcement learning.

Science.gov (United States)

Marsh, Brandi T; Tarigoppula, Venkata S Aditya; Chen, Chen; Francis, Joseph T

2015-05-13

For decades, neurophysiologists have worked on elucidating the function of the cortical sensorimotor control system from the standpoint of kinematics or dynamics. Recently, computational neuroscientists have developed models that can emulate changes seen in the primary motor cortex during learning. However, these simulations rely on the existence of a reward-like signal in the primary sensorimotor cortex. Reward modulation of the primary sensorimotor cortex has yet to be characterized at the level of neural units. Here we demonstrate that single units/multiunits and local field potentials in the primary motor (M1) cortex of nonhuman primates (Macaca radiata) are modulated by reward expectation during reaching movements and that this modulation is present even while subjects passively view cursor motions that are predictive of either reward or nonreward. After establishing this reward modulation, we set out to determine whether we could correctly classify rewarding versus nonrewarding trials, on a moment-to-moment basis. This reward information could then be used in collaboration with reinforcement learning principles toward an autonomous brain-machine interface. The autonomous brain-machine interface would use M1 for both decoding movement intention and extraction of reward expectation information as evaluative feedback, which would then update the decoding algorithm as necessary. In the work presented here, we show that this, in theory, is possible. Copyright © 2015 the authors 0270-6474/15/357374-14$15.00/0.

CAMAC interface for TPC data-acquisition electronics

International Nuclear Information System (INIS)

Sidman, S.; Olson, S.; Jared, R.

1983-06-01

The Time Projection Chamber (TPC) is a detector used for high-energy physics research at the Stanford PEP Accelerator. TPC requires about 17,000 channels of data acquisition, which samples on command the input to each channel at a 10 MHz rate. This high data rate is made possible by means of Charge Coupled Devices (CCDs), intelligent digitizers, and a sophisticated trigger system. The TPC-CAMAC interface described here was developed to allow experiments of smaller scale than the complete TPC to use the standard data acquisition portion of the TPC electronics, namely the amplifier, CCD and digitizer bins. These three bins, when properly interconnected and controlled by the interface control bin, form a transient digitizer with a depth of 455 samples and a maximum width of 256 channels per bin set

Effects of graphene defect on electronic structures of its interface with organic semiconductor

Energy Technology Data Exchange (ETDEWEB)

Yang, Qing-Dan; Wang, Chundong; Mo, Hin-Wai; Lo, Ming-Fai; Yuen, Muk Fung; Ng, Tsz-Wai, E-mail: tszwaing@cityu.edu.hk, E-mail: apcslee@cityu.edu.hk; Zhang, Wen-Jun; Lee, Chun-Sing, E-mail: tszwaing@cityu.edu.hk, E-mail: apcslee@cityu.edu.hk [Department of Physics and Materials Science, Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong (Hong Kong); Dou, Wei-Dong [Department of Physics and Materials Science, Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong (Hong Kong); Physics Department, Shaoxing University, Shaoxing 312000 (China); Tsang, Sai-Wing [Department of Physics and Materials Science, City University of Hong Kong (Hong Kong)

2015-03-30

Electronic structures of copper hexadecafluorophthalocyanine (F{sub 16}CuPc)/graphene with different defect density were studied with ultra-violet photoelectron spectroscopy. We showed that the charge transfer interaction and charge flow direction can be interestingly tuned by controlling the defect density of graphene through time-controlled H{sub 2} plasma treatment. By increasing the treatment time of H{sub 2} plasma from 30 s to 5 min, both the interface surface dipole and the electron transporting barrier at F{sub 16}CuPc/graphene interface are significantly reduced from 0.86 to 0.56 eV and 0.71 to 0.29 eV, respectively. These results suggested that graphene's defect control is a simple approach for tuning electronic properties of organic/graphene interfaces.

Electronic structure at metal-smiconductor surfaces and interfaces: effects of disorder

International Nuclear Information System (INIS)

Rodrigues, D.E.

1988-01-01

The main concern of this work is the study of the electronic structure at metal and semiconductor surfaces or interfaces, with special emphasis in the effects of disorder and local microstructure upon them. Various factors which determine this structure are presented and those of central importance are identified. A model that allows the efficient and exact calculation of the local density of states at disordered interfaces is described. This model is based on a tight-binding hamiltonian that has enough flexibility so as to allow an adequate description of real solids. The disorder is taken into account by including stochastic perturbations in the diagonal elements of the hamiltonian in a site orbital basis. These perturbations are taken at each layer from a lorentzian probability distribution. An exact expression for the calculation of the local density of states is derived and applied to a model surface built up from a type orbitals arranged in a simple cubic lattice. The effects of disorder on the local densities of states and on the existence of surface Tamm states are studied. The properties of the electronic states with this kind of model of disorder are considered. The self-consistent calculation of the electronic structure of the Si(111) - (1x1) surface is presented. The effects of disorder on the electronic properties such as the work function or the position of surface states within the gap are evaluated. The surface of the metallic compound NiSi 2 is also treated. The first self-consistent calculation of the electronic structure of its (111) surface is presented. The electronic structure of the Si/NiSi 2 (111) interfaces is calculated for the two types of junctions that can be grown experimentally. The origin of the difference between the Schottky barrier heights at both interfaces is discussed. The results are compared with available experimental data. The implications of this calculation on existing theories about the microscopic mechanism that causes

Energy and intensity modulated radiation therapy with electrons

OpenAIRE

Olofsson, Lennart

2005-01-01

In recent years intensity modulated radiation therapy with photons (xIMRT) has gained attention due to its ability to reduce the dose in the tissues close to the tumour volume. However, this technique also results in a large low dose volume. Electron IMRT (eIMRT) has the potential to reduce the integral dose to the patient due to the dose fall off in the electron depth dose curves. This dose fall off makes it possible to modulate the dose distribution in the direction of the beam by selecting...

Electrical field excitation in non-uniform plasma by a modulated electron beam

International Nuclear Information System (INIS)

Anisimov, I.O.; Borisov, O.A.

2000-01-01

Excitation of electric fields due to a modulated electron beam in a warm non-uniform plasma is treated for weak beams in warm plasma. It is shown that the maximum electric field magnitude that is reached near the local plasma resonance point depends significantly on the direction of the electron stream motion. In collisional plasma the magnitude of the Langmuir wave that propagates to the subcritical plasma also depends on the direction of the electron stream motion. The motion of the modulated electron stream front results in beatings between oscillations on the modulation frequency and on the local electron plasma frequencies at the initial moment. Later these beatings damp in the supercritical plasma, whereas in the subcritical plasma they are transformed into spatial beatings between the field of the modulated electron stream and the excited Langmuir wave. (orig.)

An Approach to Interface Synthesis

DEFF Research Database (Denmark)

Madsen, Jan; Hald, Bjarne

1995-01-01

Presents a novel interface synthesis approach based on a one-sided interface description. Whereas most other approaches consider interface synthesis as optimizing a channel to existing client/server modules, we consider the interface synthesis as part of the client/server module synthesis (which...... may contain the re-use of existing modules). The interface synthesis approach describes the basic transformations needed to transform the server interface description into an interface description on the client side of the communication medium. The synthesis approach is illustrated through a point...

Molecular Computational Investigation of Electron Transfer Kinetics across Cytochrome-Iron Oxide Interfaces

International Nuclear Information System (INIS)

Kerisit, Sebastien N.; Rosso, Kevin M.; Dupuis, Michel; Valiev, Marat

2007-01-01

The interface between electron transfer proteins such as cytochromes and solid phase mineral oxides is central to the activity of dissimilatory-metal reducing bacteria. A combination of potential-based molecular dynamics simulations and ab initio electronic structure calculations are used in the framework of Marcus' electron transfer theory to compute elementary electron transfer rates from a well-defined cytochrome model, namely the small tetraheme cytochrome (STC) from Shewanella oneidensis, to surfaces of the iron oxide mineral hematite (a-Fe2O3). Room temperature molecular dynamics simulations show that an isolated STC molecule favors surface attachment via direct contact of hemes I and IV at the poles of the elongated axis, with electron transfer distances as small as 9 Angstroms. The cytochrome remains attached to the mineral surface in the presence of water and shows limited surface diffusion at the interface. Ab initio electronic coupling matrix element (VAB) calculations of configurations excised from the molecular dynamics simulations reveal VAB values ranging from 1 to 20 cm-1, consistent with nonadiabaticity. Using these results, together with experimental data on the redox potential of hematite and hemes in relevant cytochromes and calculations of the reorganization energy from cluster models, we estimate the rate of electron transfer across this model interface to range from 1 to 1000 s-1 for the most exothermic driving force considered in this work, and from 0.01 to 20 s-1 for the most endothermic. This fairly large range of electron transfer rates highlights the sensitivity of the rate upon the electronic coupling matrix element, which is in turn dependent on the fluctuations of the heme configuration at the interface. We characterize this dependence using an idealized bis-imidazole heme to compute from first principles the VAB variation due to porphyrin ring orientation, electron transfer distance, and mineral surface termination. The electronic

Electron emission and plasma generation in a modulator electron gun using ferroelectric cathode

International Nuclear Information System (INIS)

Chen Shutao; Zheng Shuxin; Zhu Ziqiu; Dong Xianlin; Tang Chuanxiang

2006-01-01

Strong electron emission and dense plasma generation have been observed in a modulator electron gun with a Ba 0.67 Sr 0.33 TiO 3 ferroelectric cathode. Parameter of the modulator electron gun and lifetime of the ferroelectric cathode were investigated. It was shown that electron emission from Ba 0.67 Sr 0.33 TiO 3 cathode with a positive triggering pulse is a sort of plasma emission. Electrons were emitted by the co-effect of surface plasma and non-compensated negative polarization charges at the surface of the ferroelectric. The element analyses of the graphite collector after emission process was performed to show the ingredient of the plasma consist of Ba, Ti and Cu heavy cations of the ceramic compound and electrode. It was demonstrated the validity of the Child-Langmuir law by introducing the decrease of vacuum gap and increase of emission area caused by the expansion of the surface plasma

Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics.

Science.gov (United States)

Hertel, S; Waldmann, D; Jobst, J; Albert, A; Albrecht, M; Reshanov, S; Schöner, A; Krieger, M; Weber, H B

2012-07-17

Graphene is an outstanding electronic material, predicted to have a role in post-silicon electronics. However, owing to the absence of an electronic bandgap, graphene switching devices with high on/off ratio are still lacking. Here in the search for a comprehensive concept for wafer-scale graphene electronics, we present a monolithic transistor that uses the entire material system epitaxial graphene on silicon carbide (0001). This system consists of the graphene layer with its vanishing energy gap, the underlying semiconductor and their common interface. The graphene/semiconductor interfaces are tailor-made for ohmic as well as for Schottky contacts side-by-side on the same chip. We demonstrate normally on and normally off operation of a single transistor with on/off ratios exceeding 10(4) and no damping at megahertz frequencies. In its simplest realization, the fabrication process requires only one lithography step to build transistors, diodes, resistors and eventually integrated circuits without the need of metallic interconnects.

Bursts of electron waves modulated by oblique ion waves

International Nuclear Information System (INIS)

Boswell, R.W.

1984-01-01

Experimental evidence is presented which shows small packets of electron plasma waves modulated by large amplitude obliquely propagating non-linear ion plasma waves. Very often the whole system is modulated by an oscillation near the ion gyro frequency or its harmonics. The ion waves seem to be similar to those measured in the current carrying auroral plasma. These results suggest that the generation of ion and electron waves in the auroral plasma may be correlated

Programmable logic controller optical fibre sensor interface module

Science.gov (United States)

Allwood, Gary; Wild, Graham; Hinckley, Steven

2011-12-01

Most automated industrial processes use Distributed Control Systems (DCSs) or Programmable Logic Controllers (PLCs) for automated control. PLCs tend to be more common as they have much of the functionality of DCSs, although they are generally cheaper to install and maintain. PLCs in conjunction with a human machine interface form the basis of Supervisory Control And Data Acquisition (SCADA) systems, combined with communication infrastructure and Remote Terminal Units (RTUs). RTU's basically convert different sensor measurands in to digital data that is sent back to the PLC or supervisory system. Optical fibre sensors are becoming more common in industrial processes because of their many advantageous properties. Being small, lightweight, highly sensitive, and immune to electromagnetic interference, means they are an ideal solution for a variety of diverse sensing applications. Here, we have developed a PLC Optical Fibre Sensor Interface Module (OFSIM), in which an optical fibre is connected directly to the OFSIM located next to the PLC. The embedded fibre Bragg grating sensors, are highly sensitive and can detect a number of different measurands such as temperature, pressure and strain without the need for a power supply.

Some ways for the investigation of the solar modulation of cosmic electrons

International Nuclear Information System (INIS)

Mercier, J.

1969-01-01

In this report, we are investigating the solar modulation of cosmic electrons, in different ways. By comparing the calculated intensity with the measured intensity of positrons, we can evaluate the solar modulation of positrons, hence the modulation of negatons, since the modulation of negatons is probably the same that for positrons. By comparing the electron spectrum in interstellar space needed to explain the galactic background radio emission with that observed near the earth, we can deduce information about the modulation of electrons. We can investigate the modulation through the observation of its variations during the solar cycle. This different ways lead us to compatible results. In spite of the fact that the precision of the experimental data is poor, the modulation can be represented by: a constant or a form in exp(- K/Roβ) under the rigidity Ro ≅ 0,5 BV; a form in exp(- K/R) or exp(- K/Rβ) above this rigidity. In addition, the investigation of both electrons and protons displays that the diffusion-convection theory is inadequate to explain all the features of the solar modulation. (author) [fr

Field and frequency modulated sub-THz electron spin resonance spectrometer

Directory of Open Access Journals (Sweden)

Christian Caspers

2016-05-01

Full Text Available 260-GHz radiation is used for a quasi-optical electron spin resonance (ESR spectrometer which features both field and frequency modulation. Free space propagation is used to implement Martin-Puplett interferometry with quasi-optical isolation, mirror beam focusing, and electronic polarization control. Computer-aided design and polarization pathway simulation lead to the design of a compact interferometer, featuring lateral dimensions less than a foot and high mechanical stability, with all components rated for power levels of several Watts suitable for gyrotron radiation. Benchmark results were obtained with ESR standards (BDPA, DPPH using field modulation. Original high-field ESR of 4f electrons in Sm3+-doped Ceria was detected using frequency modulation. Distinct combinations of field and modulation frequency reach a signal-to-noise ratio of 35 dB in spectra of BDPA, corresponding to a detection limit of about 1014 spins.

Enabling grand-canonical Monte Carlo : extending the flexibility of GROMACS through the GromPy python interface module

NARCIS (Netherlands)

Pool, René; Heringa, Jaap; Hoefling, Martin; Schulz, Roland; Smith, Jeremy C; Feenstra, K Anton

2012-01-01

We report on a python interface to the GROMACS molecular simulation package, GromPy (available at https://github.com/GromPy). This application programming interface (API) uses the ctypes python module that allows function calls to shared libraries, for example, written in C. To the best of our

Interface modulated currents in periodically proton exchanged Mg doped lithium niobate

Energy Technology Data Exchange (ETDEWEB)

Neumayer, Sabine M.; Rodriguez, Brian J., E-mail: brian.rodriguez@ucd.ie, E-mail: gallo@kth.se [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Conway Institute of Biomolecular and Biomedical Research, University College Dublin, Belfield, Dublin 4 (Ireland); Manzo, Michele; Gallo, Katia, E-mail: brian.rodriguez@ucd.ie, E-mail: gallo@kth.se [Department of Applied Physics, KTH-Royal Institute of Technology, Roslagstullbacken 21, 10691 Stockholm (Sweden); Kholkin, Andrei L. [Department of Physics and CICECO-Aveiro Institute of Materials, 3810-193 Aveiro, Portugal and Institute of Natural Sciences, Ural Federal University, 620000 Ekaterinburg (Russian Federation)

2016-03-21

Conductivity in Mg doped lithium niobate (Mg:LN) plays a key role in the reduction of photorefraction and is therefore widely exploited in optical devices. However, charge transport through Mg:LN and across interfaces such as electrodes also yields potential electronic applications in devices with switchable conductivity states. Furthermore, the introduction of proton exchanged (PE) phases in Mg:LN enhances ionic conductivity, thus providing tailorability of conduction mechanisms and functionality dependent on sample composition. To facilitate the construction and design of such multifunctional electronic devices based on periodically PE Mg:LN or similar ferroelectric semiconductors, fundamental understanding of charge transport in these materials, as well as the impact of internal and external interfaces, is essential. In order to gain insight into polarization and interface dependent conductivity due to band bending, UV illumination, and chemical reactivity, wedge shaped samples consisting of polar oriented Mg:LN and PE phases were investigated using conductive atomic force microscopy. In Mg:LN, three conductivity states (on/off/transient) were observed under UV illumination, controllable by the polarity of the sample and the externally applied electric field. Measurements of currents originating from electrochemical reactions at the metal electrode–PE phase interfaces demonstrate a memresistive and rectifying capability of the PE phase. Furthermore, internal interfaces such as domain walls and Mg:LN–PE phase boundaries were found to play a major role in the accumulation of charge carriers due to polarization gradients, which can lead to increased currents. The insight gained from these findings yield the potential for multifunctional applications such as switchable UV sensitive micro- and nanoelectronic devices and bistable memristors.

Numerical model analysis of the shaded dye-sensitized solar cell module

International Nuclear Information System (INIS)

Chen Shuanghong; Weng Jian; Huang Yang; Zhang Changneng; Hu Linhua; Kong Fantai; Wang Lijun; Dai Songyuan

2010-01-01

On the basis of a numerical model analysis, the photovoltaic performance of a partially shadowed dye-sensitized solar cell (DSC) module is investigated. In this model, the electron continuity equation and the Butler-Vollmer equation are applied considering electron transfer via the interface of transparent conducting oxide/electrolyte in the shaded DSC. The simulation results based on this model are consistent with experimental results. The influence of shading ratio, connection types and the intensity of irradiance has been analysed according to experiments and numerical simulation. It is found that the performance of the DSC obviously declines with an increase in the shaded area due to electron recombination at the TCO/electrolyte interface and that the output power loss of the shadowed DSC modules in series is much larger than that in parallel due to the 'breakdown' occurring at the TCO/electrolyte interface. The impact of shadow on the DSC performance is stronger with increase in irradiation intensity.

Role of interface states on electron transport in a-Si:H/nc-Si:H multilayer structures

Science.gov (United States)

Yadav, Asha; Kumari, Juhi; Agarwal, Pratima

2018-05-01

In this paper we report, I-V characteristic of a-Si:H/nc-Si:H multilayer structures in lateral as well as transverse direction. In lateral geometry, where the interfaces are parallel to the direction of electronic transport, residual photo conductivity (persistent photoconductivity) is observed after the light was turned off. On the other hand, in transverse geometry, where interfaces are along the direction of electronic transport, the space charge limited currents are affected and higher density of states is obtained. The PPC was more in the structures where numbers of such interface were more. These results have been understood in terms of the charge carriers trapped at the interface, which influence the electronic transport.

Design of memristive interface between electronic neurons

Science.gov (United States)

Gerasimova, S. A.; Mikhaylov, A. N.; Belov, A. I.; Korolev, D. S.; Guseinov, D. V.; Lebedeva, A. V.; Gorshkov, O. N.; Kazantsev, V. B.

2018-05-01

Nonlinear dynamics of two electronic oscillators coupled via a memristive device has been investigated. Such model mimics the interaction between synaptically coupled brain neurons with the memristive device imitating neuron axon. The synaptic connection is provided by the adaptive behavior of memristive device that changes its resistance under the action of spike-like activity. Mathematical model of such a memristive interface has been developed to describe and predict the experimentally observed regularities of forced synchronization of neuron-like oscillators.

Effect of interface of electronics devices constructed with different materials to X-ray

International Nuclear Information System (INIS)

Mu Weibing; Chen Panxun

2003-01-01

The behavior of X-ray nearby interface which is constructed with different materials is introduced in this paper. And the affect to electronics devices of this behavior is analyzed, the affect factors of four interfaces are calculated by Monte-Carlo method

Role of coherence and delocalization in photo-induced electron transfer at organic interfaces

Science.gov (United States)

Abramavicius, V.; Pranculis, V.; Melianas, A.; Inganäs, O.; Gulbinas, V.; Abramavicius, D.

2016-09-01

Photo-induced charge transfer at molecular heterojunctions has gained particular interest due to the development of organic solar cells (OSC) based on blends of electron donating and accepting materials. While charge transfer between donor and acceptor molecules can be described by Marcus theory, additional carrier delocalization and coherent propagation might play the dominant role. Here, we describe ultrafast charge separation at the interface of a conjugated polymer and an aggregate of the fullerene derivative PCBM using the stochastic Schrödinger equation (SSE) and reveal the complex time evolution of electron transfer, mediated by electronic coherence and delocalization. By fitting the model to ultrafast charge separation experiments, we estimate the extent of electron delocalization and establish the transition from coherent electron propagation to incoherent hopping. Our results indicate that even a relatively weak coupling between PCBM molecules is sufficient to facilitate electron delocalization and efficient charge separation at organic interfaces.

Chemical modulation of electronic structure at the excited state

Science.gov (United States)

Li, F.; Song, C.; Gu, Y. D.; Saleem, M. S.; Pan, F.

2017-12-01

Spin-polarized electronic structures are the cornerstone of spintronics, and have thus attracted a significant amount of interest; in particular, researchers are looking into how to modulate the electronic structure to enable multifunctional spintronics applications, especially in half-metallic systems. However, the control of the spin polarization has only been predicted in limited two-dimensional systems with spin-polarized Dirac structures and is difficult to achieve experimentally. Here, we report the modulation of the electronic structure in the light-induced excited state in a typical half-metal, L a1 /2S r1 /2Mn O3 -δ . According to the spin-transport measurements, there appears a light-induced increase in magnetoresistance due to the enhanced spin scattering, which is closely associated with the excited spin polarization. Strikingly, the light-induced variation can be enhanced via alcohol processing and reduced by oxygen annealing. X-ray photoelectron spectroscopy measurements show that in the chemical process, a redox reaction occurs with a change in the valence of Mn. Furthermore, first-principles calculations reveal that the change in the valence of Mn alters the electronic structure and consequently modulates the spin polarization in the excited state. Our findings thus report a chemically tunable electronic structure, demonstrating interesting physics and the potential for multifunctional applications and ultrafast spintronics.

Electron drag in ferromagnetic structures separated by an insulating interface

Science.gov (United States)

Kozub, V. I.; Muradov, M. I.; Galperin, Y. M.

2018-06-01

We consider electron drag in a system of two ferromagnetic layers separated by an insulating interface. The source of it is expected to be magnon-electron interactions. Namely, we assume that the external voltage is applied to the "active" layer stimulating electric current through this layer. In its turn, the scattering of the current-carrying electrons by magnons leads to a magnon drag current within this layer. The 3-magnons interactions between magnons in the two layers (being of non-local nature) lead to magnon drag within the "passive" layer which, correspondingly, produce electron drag current via processes of magnon-electron scattering. We estimate the drag current and compare it to the phonon-induced one.

Modulation of Posterior Alpha Activity by Spatial Attention Allows for Controlling A Continuous Brain-Computer Interface.

Science.gov (United States)

Horschig, Jörn M; Oosterheert, Wouter; Oostenveld, Robert; Jensen, Ole

2015-11-01

Here we report that the modulation of alpha activity by covert attention can be used as a control signal in an online brain-computer interface, that it is reliable, and that it is robust. Subjects were instructed to orient covert visual attention to the left or right hemifield. We decoded the direction of attention from the magnetoencephalogram by a template matching classifier and provided the classification outcome to the subject in real-time using a novel graphical user interface. Training data for the templates were obtained from a Posner-cueing task conducted just before the BCI task. Eleven subjects participated in four sessions each. Eight of the subjects achieved classification rates significantly above chance level. Subjects were able to significantly increase their performance from the first to the second session. Individual patterns of posterior alpha power remained stable throughout the four sessions and did not change with increased performance. We conclude that posterior alpha power can successfully be used as a control signal in brain-computer interfaces. We also discuss several ideas for further improving the setup and propose future research based on solid hypotheses about behavioral consequences of modulating neuronal oscillations by brain computer interfacing.

Predicting the Rate Constant of Electron Tunneling Reactions at the CdSe-TiO2 Interface.

Science.gov (United States)

Hines, Douglas A; Forrest, Ryan P; Corcelli, Steven A; Kamat, Prashant V

2015-06-18

Current interest in quantum dot solar cells (QDSCs) motivates an understanding of the electron transfer dynamics at the quantum dot (QD)-metal oxide (MO) interface. Employing transient absorption spectroscopy, we have monitored the electron transfer rate (ket) at this interface as a function of the bridge molecules that link QDs to TiO2. Using mercaptoacetic acid, 3-mercaptopropionic acid, 8-mercaptooctanoic acid, and 16-mercaptohexadecanoic acid, we observe an exponential attenuation of ket with increasing linker length, and attribute this to the tunneling of the electron through the insulating linker molecule. We model the electron transfer reaction using both rectangular and trapezoidal barrier models that have been discussed in the literature. The one-electron reduction potential (equivalent to the lowest unoccupied molecular orbital) of each molecule as determined by cyclic voltammetry (CV) was used to estimate the effective barrier height presented by each ligand at the CdSe-TiO2 interface. The electron transfer rate (ket) calculated for each CdSe-ligand-TiO2 interface using both models showed the results in agreement with the experimentally determined trend. This demonstrates that electron transfer between CdSe and TiO2 can be viewed as electron tunneling through a layer of linking molecules and provides a useful method for predicting electron transfer rate constants.

Lattice structures and electronic properties of MO/MoSe2 interface from first-principles calculations

Science.gov (United States)

Zhang, Yu; Tang, Fu-Ling; Xue, Hong-Tao; Lu, Wen-Jiang; Liu, Jiang-Fei; Huang, Min

2015-02-01

Using first-principles plane-wave calculations within density functional theory, we theoretically studied the atomic structure, bonding energy and electronic properties of the perfect Mo (110)/MoSe2 (100) interface with a lattice mismatch less than 4.2%. Compared with the perfect structure, the interface is somewhat relaxed, and its atomic positions and bond lengths change slightly. The calculated interface bonding energy is about -1.2 J/m2, indicating that this interface is very stable. The MoSe2 layer on the interface has some interface states near the Fermi level, the interface states are mainly caused by Mo 4d orbitals, while the Se atom almost have no contribution. On the interface, Mo-5s and Se-4p orbitals hybridize at about -6.5 to -5.0 eV, and Mo-4d and Se-4p orbitals hybridize at about -5.0 to -1.0 eV. These hybridizations greatly improve the bonding ability of Mo and Se atom in the interface. By Bader charge analysis, we find electron redistribution near the interface which promotes the bonding of the Mo and MoSe2 layer.

A 120kV IGBT modulator for driving a Pierce electron gun

International Nuclear Information System (INIS)

Earley, Lawrence M.; Brown, Richard W.; Carlson, Randolph L.; Ferguson, Patrick; Haynes, William B.; Kirbie, Hugh C.; Russell, Steven J.; Sigler, Floyd E.; Smirnova, Evgenya I.; Wheat, Robert M. Jr.

2004-01-01

An IGBT modulator has been developed to drive a 120 kV, 23 A Pierce electron gun. The modulator is capable of producing pulses up to 10 μs in width at repetition rates up to 10Hz with no active reset. The pulse rise time on the electron gun will be approximately 2 μs and the remaining 8 μs of flattop is tuned to have a ripple of less than 1 percent rms. The modulator technology was developed from a previous 50 kV prototype. The modulator consists of six boards, each with one EUPEC IGBT that drives a single common step-up transformer wound on METGLAS 2605SC cores. The six transformer cores share a common bi-filar output secondary winding. The modulator uses a fiber optic trigger system and has a high voltage cable output with an epoxy receptacle on the oil end and a ceramic receptacle on the vacuum end. The 120 kV electron gun was manufactured by MDS Co. and will be used to generate sheet electron beams from the standard pencil beam produced by the Pierce electron gun.

Tissue-electronics interfaces: from implantable devices to engineered tissues

Science.gov (United States)

Feiner, Ron; Dvir, Tal

2018-01-01

Biomedical electronic devices are interfaced with the human body to extract precise medical data and to interfere with tissue function by providing electrical stimuli. In this Review, we outline physiologically and pathologically relevant tissue properties and processes that are important for designing implantable electronic devices. We summarize design principles for flexible and stretchable electronics that adapt to the mechanics of soft tissues, such as those including conducting polymers, liquid metal alloys, metallic buckling and meandering architectures. We further discuss technologies for inserting devices into the body in a minimally invasive manner and for eliminating them without further intervention. Finally, we introduce the concept of integrating electronic devices with biomaterials and cells, and we envision how such technologies may lead to the development of bionic organs for regenerative medicine.

RoboCon: Operator interface for robotic applications. Final report: RoboCon electrical interfacing -- system architecture, and Interfacing NDDS and LabView

Energy Technology Data Exchange (ETDEWEB)

Schempf, H.

1998-04-30

The first appendix contains detailed specifications of the electrical interfacing employed in Robocon. This includes all electrical signals and power requirement descriptions up to and including the interface entry points for external robots and systems. The reader is first presented with an overview of the overall Robocon electrical system, followed by sub-sections describing each module in detail. The appendices contain listings of power requirements and the electrical connectors and cables used, followed by an overall electrical system diagram. Custom electronics employed are also described. The Network Data Delivery Service (NDDS) is a real-time dissemination communications architecture which allows nodes on a network to publish data and subscribe to data published by other nodes while remaining anonymous. The second appendix explains how to facilitate a seamless interface between NDDS and LabView and provides sample source code used to implement an NDDS consumer which writes a string to a socket.

Evolution of Modulated Dispersive Electron Waves in a Plasma

DEFF Research Database (Denmark)

Sugai, H.; Lynov, Jens-Peter; Michelsen, Poul

1979-01-01

The linear propagation of amplitude-modulated electron waves was examined in a low-density Q-machine plasma. Three effects of the strong dispersion on the modulated wave have been demonstrated: (i) a wavepacket expands along its direction of propagation, followed by a shift of the frequency through...

Current Harmonics Compensation in Microgrids Exploiting the Power Electronics Interfaces of Renewable Energy Sources

Directory of Open Access Journals (Sweden)

Ioannis Bouloumpasis

2015-03-01

Full Text Available This work presents a method of current harmonic reduction in a distorted distribution system. In order to evaluate the proposed method a grid with high-order current harmonics is assumed. The reduction of current distortion is feasible due to the pulse modulation of an active filter, which consists of a buck-boost converter connected back-to-back to a polarity swapping inverter. For a practical application, this system would be the power electronic interface of a Renewable Energy Source (RES and therefore it changes a source of harmonics to a damping harmonics system. Using the proposed method, the current Total Harmonic Distortion (THD of the grid is reduced below the acceptable limits and thus the general power quality of the system is improved. Simulations in the MATLAB/SIMULINK platform and experiments have been performed in order to verify the effectiveness of the proposed method.

Morphology and electronic properties of the pentacene on cobalt interface

NARCIS (Netherlands)

Tiba, M. V.; Koopmans, B.; Jonkman, Harry; de Jonge, W.J.M.

2006-01-01

In this paper, we report the structural and electronic properties of pentacene thin films grown on a polycrystalline Co film using atomic force microscopy and ultraviolet photoemission spectroscopy (UPS), respectively. Investigation of this type of interface is of importance for the engineering of

Hot electron attenuation of direct and scattered carriers across an epitaxial Schottky interface

NARCIS (Netherlands)

Parui, S.; Klandermans, P. S.; Venkatesan, S.; Scheu, C.; Banerjee, T.

2013-01-01

Hot electron transport of direct and scattered carriers across an epitaxial NiSi2/n-Si(111) interface, for different NiSi2 thickness, is studied using ballistic electron emission microscopy (BEEM). We find the BEEM transmission for the scattered hot electrons in NiSi2 to be significantly lower than

Electromagnetic surface waves at the interface of a relativistic electron beam with vacuum

International Nuclear Information System (INIS)

Shoucri, M.M.; Gagne, R.R.J.

1977-01-01

The dispersion relation for electromagnetic surface waves propagating at the interface between a relativistic electron beam and vacuum is derived. The excitation of surface modes in a plasma at rest by a relativistic electron beam is discussed

A Strategy to Enhance the Efficiency of Quantum Dot-Sensitized Solar Cells by Decreasing Electron Recombination with Polyoxometalate/TiO2 as the Electronic Interface Layer.

Science.gov (United States)

Chen, Li; Chen, Weilin; Li, Jianping; Wang, Jiabo; Wang, Enbo

2017-07-21

Electron recombination occurring at the TiO 2 /quantum dot sensitizer/electrolyte interface is the key reason for hindering further efficiency improvements to quantum dot sensitized solar cells (QDSCs). Polyoxometalate (POM) can act as an electron-transfer medium to decrease electron recombination in a photoelectric device owing to its excellent oxidation/reduction properties and thermostability. A POM/TiO 2 electronic interface layer prepared by a simple layer-by-layer self-assembly method was added between fluorine-doped tin oxide (FTO) and mesoporous TiO 2 in the photoanode of QDSCs, and the effect on the photovoltaic performance was systematically investigated. Photovoltaic experimental results and the electron transmission mechanism show that the POM/TiO 2 electronic interface layer in the QDSCs can clearly suppress electron recombination, increase the electron lifetime, and result in smoother electron transmission. In summary, the best conversion efficiency of QDSCs with POM/TiO 2 electronic interface layers increases to 8.02 %, which is an improvement of 25.1 % compared with QDSCs without POM/TiO 2 . This work first builds an electron-transfer bridge between FTO and the quantum dot sensitizer and paves the way for further improved efficiency of QDSCs. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Magnetic collimation and metal foil filtering for electron range and fluence modulation

International Nuclear Information System (INIS)

Phaisangittisakul, N.; D'Souza, W.D.; Ma Lijun

2004-01-01

We investigated the use of magnetically collimated electron beams together with metal filters for electron fluence and range modulation. A longitudinal magnetic field collimation method was developed to reduce skin dose and to improve the electron beam penumbra. Thin metal foils were used to adjust the energies of magnetically collimated electrons. The effects for different types of foils such as Al, Be, Cu, Pb, and Ti were studied using Monte Carlo calculations. An empirical pencil beam dose calculation model was developed to calculate electron dose distributions under magnetic collimation and foil modulation. An optimization method was developed to produce conformal dose distributions for simulated targets such as a horseshoe-shaped target. Our results show that it is possible to produce an electron depth dose enhancement peak using similar techniques of producing a spread-out Bragg peak. In conclusion, our study demonstrates new aspects of using magnetic collimation and foil filtration for producing fluence and range modulated electron dose distributions

Development and implementation of an electronic interface for complex clinical laboratory instruments without a vendor-provided data transfer interface

Directory of Open Access Journals (Sweden)

Gary E Blank

2011-01-01

Full Text Available Background: Clinical pathology laboratories increasingly use complex instruments that incorporate chromatographic separation, e.g. liquid chromatography, with mass detection for rapid identification and quantification of biochemicals, biomolecules, or pharmaceuticals. Electronic data management for these instruments through interfaces with laboratory information systems (LIS is not generally available from the instrument manufacturers or LIS vendors. Unavailability of a data management interface is a limiting factor in the use of these instruments in clinical laboratories where there is a demand for high-throughput assays with turn-around times that meet patient care needs. Materials and Methods: Professional society guidelines for design and transfer of data between instruments and LIS were used in the development and implementation of the interface. File transfer protocols and support utilities were written to facilitate transfer of information between the instruments and the LIS. An interface was created for liquid chromatography-tandem mass spectroscopy and inductively coupled plasma-mass spectroscopy instruments to manage data in the Sunquest® LIS. Results: Interface validation, implementation and data transfer fidelity as well as training of technologists for use of the interface was performed by the LIS group. The technologists were familiarized with the data verification process as a part of the data management protocol. The total time for the technologists for patient/control sample data entry, assay results data transfer, and results verification was reduced from approximately 20 s per sample to <1 s per sample. Sample identification, results data entry errors, and omissions were eliminated. There was electronic record of the technologist performing the assay runs and data management. Conclusions: Development of a data management interface for complex, chromatography instruments in clinical laboratories has resulted in rapid, accurate

Syringe-Injectable Electronics with a Plug-and-Play Input/Output Interface.

Science.gov (United States)

Schuhmann, Thomas G; Yao, Jun; Hong, Guosong; Fu, Tian-Ming; Lieber, Charles M

2017-09-13

Syringe-injectable mesh electronics represent a new paradigm for brain science and neural prosthetics by virtue of the stable seamless integration of the electronics with neural tissues, a consequence of the macroporous mesh electronics structure with all size features similar to or less than individual neurons and tissue-like flexibility. These same properties, however, make input/output (I/O) connection to measurement electronics challenging, and work to-date has required methods that could be difficult to implement by the life sciences community. Here we present a new syringe-injectable mesh electronics design with plug-and-play I/O interfacing that is rapid, scalable, and user-friendly to nonexperts. The basic design tapers the ultraflexible mesh electronics to a narrow stem that routes all of the device/electrode interconnects to I/O pads that are inserted into a standard zero insertion force (ZIF) connector. Studies show that the entire plug-and-play mesh electronics can be delivered through capillary needles with precise targeting using microliter-scale injection volumes similar to the standard mesh electronics design. Electrical characterization of mesh electronics containing platinum (Pt) electrodes and silicon (Si) nanowire field-effect transistors (NW-FETs) demonstrates the ability to interface arbitrary devices with a contact resistance of only 3 Ω. Finally, in vivo injection into mice required only minutes for I/O connection and yielded expected local field potential (LFP) recordings from a compact head-stage compatible with chronic studies. Our results substantially lower barriers for use by new investigators and open the door for increasingly sophisticated and multifunctional mesh electronics designs for both basic and translational studies.

Study of the frequency modulation of various U.H.F. signals occurring in a linear electron accelerator; Etude de la modulation de frequence de divers signaux U.H.F. existant dans un accelerateur lineaire d'electrons

Energy Technology Data Exchange (ETDEWEB)

Bergere, R; Veyssiere, A; Daujat, P [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

1966-06-01

This paper contains a digest of a series of studies on the frequency modulation of U.H.F. fields and signals associated with the linear electron accelerator at Saclay. We first consider the frequency modulation of a U. H. F. pulse before its injection into an accelerating structure and after its subsequent propagation when no accelerated electrons are present. We then apply a similar analysis to the frequency modulation due to the direct interaction of the electron beam itself, and the accelerating U.H.F. fields. Finally we consider the phase modulation of the elementary electron packet itself. This phase modulation can be correctly interpreted by considering the dynamics of the electron beam as such. This analysis moreover, gives a correct interpretation of the evolution of the phase modulation with time, as the elementary electron packets move along with the sinusoidal U.H.F. accelerating fields. (authors) [French] Cet article resume les etudes faites sur l'accelerateur lineaire d'electrons de Saclay a propos de la modulation de frequence des divers signaux U.H.F. presents autour de l'accelerateur. On etudie d'abord la modulation de frequence des impulsions U.H.F. entrant sur la structure acceleratrice ou transmises par cette structure en l'absence de faisceau d'electrons acceleres. On analyse ensuite la modulation de frequence resultant de l'interaction d'une de ces ondes avec le faisceau d'electrons acceleres. On etudie enfin, la modulation de phase des divers paquets elementaires constituant une impulsion d'electrons acceleres. On montre comment cette modulation de phase peut s'expliquer par des considerations sur la dynamique du faisceau et conduire a une representation dans les divers cas possibles de l'evolution de la phase d'accrochage des electrons sur l'onde sinusoidale progressive de champ accelerateur. (auteurs)

A study of Al/Si interface by photoemission, Auger electron yield and Auger electron spectroscopies

International Nuclear Information System (INIS)

Kobayashi, K.L.I.; Barth, J.; Gerken, F.; Kunz, C.; Deutsches Elektronen-Synchrotron

1980-06-01

Photoemission, Auger electron yield and Auger electron spectra were observed for Al/Si(111) interfaces with various Al coverage prepared by successive deposition using a molecular beam source. The Al 3p derived states are introduced at around the top of the valence band by the Al coverage of less than one monolayer. The Al surface layer behaves as a 'metal' and the Fermi level is stabilized in the Al 3p derived states at about 0.3 eV above the top of the valence band of Si. The Schottky barrier height in this stage is about 0.8 eV and further increase in Al coverage does not change the barrier height. A covalent bonding model of the Al/Si interface based on the experimental results is proposed. The present result favors the on-top geometry of Al atoms on Si(111) surface among the geometries used in the pseudopotential calculation by Zhang and Schlueter. (orig.)

Evaluation of Maxim Module-Integrated Electronics at the DOE Regional Test Centers: Preprint

Energy Technology Data Exchange (ETDEWEB)

Deline, C.; Sekulic, B.; Stein, J.; Barkaszi, S.; Yang, J.; Kahn, S.

2014-07-01

Module-embedded power electronics developed by Maxim Integrated are under evaluation through a partnership with the Department of Energy's Regional Test Center (RTC) program. Field deployments of both conventional modules and electronics-enhanced modules are designed to quantify the performance advantage of Maxim's products under different amounts of inter-row shading, and their ability to be deployed at a greater ground-coverage-ratio than conventional modules. Simulations in PVSYST have quantified the predicted performance difference between conventional modules and Maxim's modules from inter-row shading. Initial performance results have identified diffuse irradiance losses at tighter row spacing for both the Maxim and conventional modules. Comparisons with published models show good agreement with models predicting the greatest diffuse irradiance losses. At tighter row spacing, all of the strings equipped with embedded power electronics outperformed their conventional peers. An even greater performance advantage is predicted to occur in the winter months when the amount of inter-row shading mismatch is at a maximum.

Nanoscale Chemical and Valence Evolution at the Metal/Oxide Interface: A Case Study of Ti/SrTiO 3

KAUST Repository

Li, Yangyang

2016-06-27

Metal/oxide interfaces are ubiquitous in a wide range of applications such as electronics, photovoltaics, memories, catalysis, and sensors. However, there have been few investigations dedicated to the nanoscale structural and chemical characteristics of these buried interfaces. In this work, the metal/oxide interface between Ti and SrTiO3 (STO) is examined as a prototypical system using high-resolution scanning transmission electron microscopy and electron energy loss spectroscopy. An atomic-thin Ti2O3-like layer at the Ti/STO interface prepared at room temperature is discovered, and first-principles calculations predict a metallic band structure of this 2D electron system. As a universal feature of such interfaces prepared at different temperatures, near the interface nanoscale oxygen-deficient domains and continuous modulation of Ti oxidation states are found. Overall, these results directly reveal complex chemical and valence evolutions at the metal/oxide interfaces, providing microscopic insights on such heterostructures. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

A prototype BPM electronics module for RHIC

International Nuclear Information System (INIS)

Ryan, W.A.; Shea, T.J.; Cerniglia, P.; Degen, C.M.

1993-01-01

Prototype components of the VXI-based Beam Position Monitor Electronics for the Relativistic Heavy Ion Collider have been constructed and tested for accuracy, resolution and linearity. The detector, designed solely for single-bunch acquisition, consists of a homodyne detector followed by a sample and hold and Analog-to-Digital Converter. In the final modules, an on-board Digital Signal Processor will provide turn by turn data correction, continuously updated closed-orbit averaging, and circular buffer maintenance. A timing processor allows synchronization of modules to enable correlated data collection

Designing Interactive Electronic Module in Chemistry Lessons

Science.gov (United States)

Irwansyah, F. S.; Lubab, I.; Farida, I.; Ramdhani, M. A.

2017-09-01

This research aims to design electronic module (e-module) oriented to the development of students’ chemical literacy on the solution colligative properties material. This research undergoes some stages including concept analysis, discourse analysis, storyboard design, design development, product packaging, validation, and feasibility test. Overall, this research undertakes three main stages, namely, Define (in the form of preliminary studies); Design (designing e-module); Develop (including validation and model trial). The concept presentation and visualization used in this e-module is oriented to chemical literacy skills. The presentation order carries aspects of scientific context, process, content, and attitude. Chemists and multi media experts have done the validation to test the initial quality of the products and give a feedback for the product improvement. The feasibility test results stated that the content presentation and display are valid and feasible to be used with the value of 85.77% and 87.94%. These values indicate that this e-module oriented to students’ chemical literacy skills for the solution colligative properties material is feasible to be used.

High-performance parallel interface to synchronous optical network gateway

Science.gov (United States)

St. John, Wallace B.; DuBois, David H.

1998-08-11

A digital system provides sending and receiving gateways for HIPPI interfaces. Electronic logic circuitry formats data signals and overhead signals in a data frame that is suitable for transmission over a connecting fiber optic link. Multiplexers route the data and overhead signals to a framer module. The framer module allocates the data and overhead signals to a plurality of 9-byte words that are arranged in a selected protocol. The formatted words are stored in a storage register for output through the gateway.

Optimal feedback control successfully explains changes in neural modulations during experiments with brain-machine interfaces

Directory of Open Access Journals (Sweden)

Miriam eZacksenhouse

2015-05-01

Full Text Available Recent experiments with brain-machine-interfaces (BMIs indicate that the extent of neural modulations increased abruptly upon starting to operate the interface, and especially after the monkey stopped moving its hand. In contrast, neural modulations that are correlated with the kinematics of the movement remained relatively unchanged. Here we demonstrate that similar changes are produced by simulated neurons that encode the relevant signals generated by an optimal feedback controller during simulated BMI experiments. The optimal feedback controller relies on state estimation that integrates both visual and proprioceptive feedback with prior estimations from an internal model. The processing required for optimal state estimation and control were conducted in the state-space, and neural recording was simulated by modeling two populations of neurons that encode either only the estimated state or also the control signal. Spike counts were generated as realizations of doubly stochastic Poisson processes with linear tuning curves. The model successfully reconstructs the main features of the kinematics and neural activity during regular reaching movements. Most importantly, the activity of the simulated neurons successfully reproduces the observed changes in neural modulations upon switching to brain control. Further theoretical analysis and simulations indicate that increasing the process noise during normal reaching movement results in similar changes in neural modulations. Thus we conclude that the observed changes in neural modulations during BMI experiments can be attributed to increasing process noise associated with the imperfect BMI filter, and, more directly, to the resulting increase in the variance of the encoded signals associated with state estimation and the required control signal.

Optimal feedback control successfully explains changes in neural modulations during experiments with brain-machine interfaces.

Science.gov (United States)

Benyamini, Miri; Zacksenhouse, Miriam

2015-01-01

Recent experiments with brain-machine-interfaces (BMIs) indicate that the extent of neural modulations increased abruptly upon starting to operate the interface, and especially after the monkey stopped moving its hand. In contrast, neural modulations that are correlated with the kinematics of the movement remained relatively unchanged. Here we demonstrate that similar changes are produced by simulated neurons that encode the relevant signals generated by an optimal feedback controller during simulated BMI experiments. The optimal feedback controller relies on state estimation that integrates both visual and proprioceptive feedback with prior estimations from an internal model. The processing required for optimal state estimation and control were conducted in the state-space, and neural recording was simulated by modeling two populations of neurons that encode either only the estimated state or also the control signal. Spike counts were generated as realizations of doubly stochastic Poisson processes with linear tuning curves. The model successfully reconstructs the main features of the kinematics and neural activity during regular reaching movements. Most importantly, the activity of the simulated neurons successfully reproduces the observed changes in neural modulations upon switching to brain control. Further theoretical analysis and simulations indicate that increasing the process noise during normal reaching movement results in similar changes in neural modulations. Thus, we conclude that the observed changes in neural modulations during BMI experiments can be attributed to increasing process noise associated with the imperfect BMI filter, and, more directly, to the resulting increase in the variance of the encoded signals associated with state estimation and the required control signal.

A first principles study of adhesion and electronic structure at Fe (110)/graphite (0001) interface

Energy Technology Data Exchange (ETDEWEB)

Liu, Yangzhen; Xing, Jiandong; Li, Yefei, E-mail: yefeili@126.com; Sun, Liang; Wang, Yong

2017-05-31

Highlights: • The surface energy of graphite (0001) and Fe (110) has been calculated and the number of layers of graphite slab and Fe slab has been estimated. • The work of adhesion of Fe (110)/graphite (0001) interface with different interfacial separation d{sub 0} (1.7–3 Å) has been systematically discussed. • The total electron density and electron density difference of Fe (110)/graphite (0001) are used to study the bonding characteristics. • The Interfacial energy and fracture toughness of Fe (110)/graphite (0001) are estimated. - Abstract: Using first–principles calculations, we discuss the bulk properties of bcc Fe and graphite and that of the surface, the work of adhesion, and the electronic structure of Fe (110)/graphite (0001) interface. In this study, the experimental results of the bulk properties of bcc Fe and graphite reveal that our adopted parameters are reliable. Moreover, the results of surface energy demonstrate that nine atomic layers of graphite (0001) and five atomic layers of Fe (110) exhibit bulk–like interiors. The lattice mismatch of Fe (110)/graphite (0001) interface is about 6%. The results also exhibit that the Fe atom residing on top of the second layer of graphite slab (HCP structure) is the preferred stacking sequence. The work of adhesion (W{sub ad}) of the optimized Fe/graphite interface of HCP structure is 1.36 J/m{sup 2}. Electronic structures indicate that the bonding characteristics are a mixture of covalent and ionic bonds in the HCP interface. Moreover, the magnetic moment of atoms at the interface was studied using the spin polarized density of states.

A Web Service and Interface for Remote Electronic Device Characterization

Science.gov (United States)

Dutta, S.; Prakash, S.; Estrada, D.; Pop, E.

2011-01-01

A lightweight Web Service and a Web site interface have been developed, which enable remote measurements of electronic devices as a "virtual laboratory" for undergraduate engineering classes. Using standard browsers without additional plugins (such as Internet Explorer, Firefox, or even Safari on an iPhone), remote users can control a Keithley…

A cryogenic multichannel electronically scanned pressure module

Science.gov (United States)

Shams, Qamar A.; Fox, Robert L.; Adcock, Edward E.; Kahng, Seun K.

1992-01-01

Consideration is given to a cryogenic multichannel electronically scanned pressure (ESP) module developed and tested over an extended temperature span from -184 to +50 C and a pressure range of 0 to 5 psig. The ESP module consists of 32 pressure sensor dice, four analog 8 differential-input multiplexers, and an amplifier circuit, all of which are packaged in a physical volume of 2 x 1 x 5/8 in with 32 pressure and two reference ports. Maximum nonrepeatability is measured at 0.21 percent of full-scale output. The ESP modules have performed consistently well over 15 times over the above temperature range and continue to work without any sign of degradation. These sensors are also immune to repeated thermal shock tests over a temperature change of 220 C/sec.

Electronic Resources Management System: Recommendation Report 2017

KAUST Repository

Ramli, Rindra M.

2017-01-01

This recommendation report provides an overview of the selection process for the new Electronic Resources Management System. The library has decided to move away from Innovative Interfaces Millennium ERM module. The library reviewed 3 system

A comparative study about electronic structures at rubrene/Ag and Ag/rubrene interfaces

Directory of Open Access Journals (Sweden)

Sumona Sinha

2015-10-01

Full Text Available The contact between the electrode and the organic semiconductor is one of the most crucial factors in determining the organic device performance. The development and production technology of different organic devices require the understanding of different types of metal/organic semiconducting thin film interfaces. Comparisons about the electronic structures at Rubrene/Ag and Ag/Rubrene interfaces have been studied using photoemission spectroscopy. The Ag on rubrene interfaces is found to show more interesting and complex natures than its counterpart. The vacuum level (VL was shifted about 0.51 eV from push back effect for deposition of 5 Å rubrene onto Ag film whereas the electronic features of silver was only suppressed and no energy shift was resulted. While the deposition of 5 Å Ag onto rubrene film leads to the diffusion of the Ag atoms, as a cluster with quantum size effect, inside the film. Angle dependent XPS measurement indicates that diffused metal clusters were present at entire probed depth of the film. Moreover these clusters dope the uppermost surface of the rubrene film which consequences a shift of the electronic states of thick organic film towards higher binding energy. The VL was found to shift about 0.31 eV toward higher binding energy whereas the shift was around 0.21 eV for the electronic states of rubrene layer.

A comparative study about electronic structures at rubrene/Ag and Ag/rubrene interfaces

Energy Technology Data Exchange (ETDEWEB)

Sinha, Sumona, E-mail: sumona.net.09@gmail.com; Mukherjee, M. [Saha Institute of Nuclear Physics, 1/AF, Bidhan Nagar, Kolkata 700064 (India)

2015-10-15

The contact between the electrode and the organic semiconductor is one of the most crucial factors in determining the organic device performance. The development and production technology of different organic devices require the understanding of different types of metal/organic semiconducting thin film interfaces. Comparisons about the electronic structures at Rubrene/Ag and Ag/Rubrene interfaces have been studied using photoemission spectroscopy. The Ag on rubrene interfaces is found to show more interesting and complex natures than its counterpart. The vacuum level (VL) was shifted about 0.51 eV from push back effect for deposition of 5 Å rubrene onto Ag film whereas the electronic features of silver was only suppressed and no energy shift was resulted. While the deposition of 5 Å Ag onto rubrene film leads to the diffusion of the Ag atoms, as a cluster with quantum size effect, inside the film. Angle dependent XPS measurement indicates that diffused metal clusters were present at entire probed depth of the film. Moreover these clusters dope the uppermost surface of the rubrene film which consequences a shift of the electronic states of thick organic film towards higher binding energy. The VL was found to shift about 0.31 eV toward higher binding energy whereas the shift was around 0.21 eV for the electronic states of rubrene layer.

Thermoelectric air-cooling module for electronic devices

International Nuclear Information System (INIS)

Chang, Yu-Wei; Chang, Chih-Chung; Ke, Ming-Tsun; Chen, Sih-Li

2009-01-01

This article investigates the thermoelectric air-cooling module for electronic devices. The effects of heat load of heater and input current to thermoelectric cooler are experimentally determined. A theoretical model of thermal analogy network is developed to predict the thermal performance of the thermoelectric air-cooling module. The result shows that the prediction by the model agrees with the experimental data. At a specific heat load, the thermoelectric air-cooling module reaches the best cooling performance at an optimum input current. In this study, the optimum input currents are from 6 A to 7 A at the heat loads from 20 W to 100 W. The result also demonstrates that the thermoelectric air-cooling module performs better performance at a lower heat load. The lowest total temperature difference-heat load ratio is experimentally estimated as -0.54 W K -1 at the low heat load of 20 W, while it is 0.664 W K -1 at the high heat load of 100 W. In some conditions, the thermoelectric air-cooling module performs worse than the air-cooling heat sink only. This article shows the effective operating range in which the cooling performance of the thermoelectric air-cooling module excels that of the air-cooling heat sink only.

Surface/Interface Carrier-Transport Modulation for Constructing Photon-Alternative Ultraviolet Detectors Based on Self-Bending-Assembled ZnO Nanowires.

Science.gov (United States)

Guo, Zhen; Zhou, Lianqun; Tang, Yuguo; Li, Lin; Zhang, Zhiqi; Yang, Hongbo; Ma, Hanbin; Nathan, Arokia; Zhao, Dongxu

2017-09-13

Surface/interface charge-carrier generation, diffusion, and recombination/transport modulation are especially important in the construction of photodetectors with high efficiency in the field of nanoscience. In the paper, a kind of ultraviolet (UV) detector is designed based on ZnO nanostructures considering photon-trapping, surface plasmonic resonance (SPR), piezophototronic effects, interface carrier-trapping/transport control, and collection. Through carefully optimized surface/interface carrier-transport modulation, a designed device with detectivity as high as 1.69 × 10 16 /1.71 × 10 16 cm·Hz 1/2 /W irradiating with 380 nm photons under ultralow bias of 0.2 V is realized by alternating nanoparticle/nanowire active layers, respectively, and the designed UV photodetectors show fast and slow recovery processes of 0.27 and 4.52 ms, respectively, which well-satisfy practical needs. Further, it is observed that UV photodetection could be performed within an alternative response by varying correlated key parameters, through efficient surface/interface carrier-transport modulation, spectrally resolved photoresponse of the detector revealing controlled detection in the UV region based on the ZnO nanomaterial, photodetection allowed or limited by varying the active layers, irradiation distance from one of the electrodes, standing states, or electric field. The detailed carrier generation, diffusion, and recombination/transport processes are well illustrated to explain charge-carrier dynamics contributing to the photoresponse behavior.

Design and development of line type modulators for high impedance electron gun

Energy Technology Data Exchange (ETDEWEB)

Dixit, Kavita P.; Tillu, Abhijit; Chavan, Ramchandra; Yadav, Vivek; Sarukte, Hemant, E-mail: kavidi@barc.gov.in [Accelerator and Pulse Power Division, Bhabha Atomic Research Centre, Mumbai (India)

2014-07-01

Conventional line type modulators are routinely used for powering pulsed power microwave devices such as magnetrons and klystrons used for radar, medical and scientific applications. The load impedance (operating point) is fairly well defined in these cases, and makes the design of the discharging circuit of the modulator straight forward. This paper describes the Line type modulators that have been developed and being routinely used for powering the Triode Electron Gun of industrial electron linacs. The beam parameters of such guns are user defined and the pulse current varies from few mA to 800mA (typ). The beam energies requirement varies from 40 keV to 80 keV. Hence the impedance offered by the electron gun to the power source (modulator) is not well defined. The load capacitance which is inclusive of the various stray capacitances along with the intrinsic gun capacitance is ∼ 200-400 pF. This capacitance, which depends on the configuration, shunts the load and makes the effective load highly capacitive with the resistive part varying over a wide range. The paper describes the design and development of conventional line type modulators for powering Electron gun load of the type described above. (author)

Electronic structure and lattice dynamics at the interface of single layer FeSe and SrTiO3

Science.gov (United States)

Ahmed, Towfiq; Balatsky, Alexander; Zhu, Jian-Xin

Recent discovery of high-temperature superconductivity with the superconducting energy gap opening at temperatures close to or above the liquid nitrogen boiling point in the single-layer FeSe grown on SrTiO3 has attracted significant interest. It suggests that the interface effects can be utilized to enhance the superconductivity. It has been shown recently that the coupling between the electrons in FeSe and vibrational modes at the interface play an important role. Here we report on a detailed study of electronic structure and lattice dynamics in the single-layer FeSe/SrTiO3 interface by using the state-of-art electronic structure method within the density functional theory. The nature of the vibrational modes at the interface and their coupling to the electronic degrees of freedom are analyzed. In addition, the effect of hole and electron doping in SrTiO3 on the electron-mode coupling strength is also considered. This work was carried out under the auspices of the National Nuclear Security Administration of the U.S. DOE at LANL under Contract No. DE-AC52-06NA25396, and was supported by the DOE Office of Basic Energy Sciences.

ELSI: A unified software interface for Kohn-Sham electronic structure solvers

Science.gov (United States)

Yu, Victor Wen-zhe; Corsetti, Fabiano; García, Alberto; Huhn, William P.; Jacquelin, Mathias; Jia, Weile; Lange, Björn; Lin, Lin; Lu, Jianfeng; Mi, Wenhui; Seifitokaldani, Ali; Vázquez-Mayagoitia, Álvaro; Yang, Chao; Yang, Haizhao; Blum, Volker

2018-01-01

Solving the electronic structure from a generalized or standard eigenproblem is often the bottleneck in large scale calculations based on Kohn-Sham density-functional theory. This problem must be addressed by essentially all current electronic structure codes, based on similar matrix expressions, and by high-performance computation. We here present a unified software interface, ELSI, to access different strategies that address the Kohn-Sham eigenvalue problem. Currently supported algorithms include the dense generalized eigensolver library ELPA, the orbital minimization method implemented in libOMM, and the pole expansion and selected inversion (PEXSI) approach with lower computational complexity for semilocal density functionals. The ELSI interface aims to simplify the implementation and optimal use of the different strategies, by offering (a) a unified software framework designed for the electronic structure solvers in Kohn-Sham density-functional theory; (b) reasonable default parameters for a chosen solver; (c) automatic conversion between input and internal working matrix formats, and in the future (d) recommendation of the optimal solver depending on the specific problem. Comparative benchmarks are shown for system sizes up to 11,520 atoms (172,800 basis functions) on distributed memory supercomputing architectures.

Evaluating the adoption of an Electronic Patient Medicine module in health care

DEFF Research Database (Denmark)

Jensen, Tina Blegind; Andersen, Povl Erik Rostgård

, and care of patients. One of the modules of the EHR system is the Electronic Patient Medicine (EPM) module which is considered an important means for reducing medical errors. In the literature, focus is primarily on those medical errors that are reduced when introducing EPM modules, whereas there is scarce......Introduction: In recent years, there has been an increased demand to exploit the possibilities of Information Technology (IT) in health care. In many hospitals, focus is on Electronic Health care Records (EHRs) which are depicted as central technologies in supporting the examination, treatment...

Electronic structure and STM imaging of the KBr-InSb interface

Energy Technology Data Exchange (ETDEWEB)

Ciochoń, Piotr, E-mail: ciochon.piotr@gmail.com; Olszowska, Natalia; Kołodziej, Jacek J.

2017-07-01

Highlights: • The structure of the InSb (001) surface covered with thin KBr layers is reported. • KBr growth does not perturb strongly the structure of a clean InSb surface. • A model of the system with KBr treated as a thin dielectric layer is proposed. • The atomic structure of the KBr-InSb interface is directly imaged using STM. - Abstract: We study the properties of the InSb (001) surface covered with ultrathin KBr films, with a thickness of 1–4 ML. KBr deposition does not strongly perturb the crystallographic structure of the InSb surface and the electronic structure of the substrate also remains unaffected by the overlayer. A simple model of the studied system is proposed, in which a thin KBr layer is treated as a dielectric film, modifying potential barrier for the electrons tunneling to/from the InSb substrate. Apparent step heights on the KBr film, measured using scanning tunneling microscope (STM), agree well with the predictions of the model and the atomically-resolved STM images show the structure of the InSb-KBr interface. Our results demonstrate that STM may be used as a tool for investigations of the semiconductor–insulator interfaces.

Photovoltaic Shading Testbed for Module-Level Power Electronics: 2016 Performance Data Update

Energy Technology Data Exchange (ETDEWEB)

Deline, Chris [National Renewable Energy Lab. (NREL), Golden, CO (United States); Meydbray, Jenya [PV Evolution Labs (PVEL), Davis, CA (United States); Donovan, Matt [PV Evolution Labs (PVEL), Davis, CA (United States)

2016-09-01

The 2012 NREL report 'Photovoltaic Shading Testbed for Module-Level Power Electronics' provides a standard methodology for estimating the performance benefit of distributed power electronics under partial shading conditions. Since the release of the report, experiments have been conducted for a number of products and for different system configurations. Drawing from these experiences, updates to the test and analysis methods are recommended. Proposed changes in data processing have the benefit of reducing the sensitivity to measurement errors and weather variability, as well as bringing the updated performance score in line with measured and simulated values of the shade recovery benefit of distributed PV power electronics. Also, due to the emergence of new technologies including sub-module embedded power electronics, the shading method has been extended to include power electronics that operate at a finer granularity than the module level. An update to the method is proposed to account for these emerging technologies that respond to shading differently than module-level devices. The partial shading test remains a repeatable test procedure that attempts to simulate shading situations as would be experienced by typical residential or commercial rooftop photovoltaic (PV) systems. Performance data for multiple products tested using this method are discussed, based on equipment from Enphase, Solar Edge, Maxim Integrated and SMA. In general, the annual recovery of shading losses from the module-level electronics evaluated is 25-35%, with the major difference between different trials being related to the number of parallel strings in the test installation rather than differences between the equipment tested. Appendix D data has been added in this update.

Weiss oscillations in the electronic structure of modulated graphene

International Nuclear Information System (INIS)

Tahir, M; Sabeeh, K; MacKinnon, A

2007-01-01

We present a theoretical study of the electronic structure of modulated graphene in the presence of a perpendicular magnetic field. The density of states and the bandwidth for the Dirac electrons in this system are determined. The appearance of unusual Weiss oscillations in the bandwidth and density of states is the main focus of this work

AVME readout module for multichannel ASIC characterization

International Nuclear Information System (INIS)

Borkar, S.P.; Lalwani, S.K.; Ghodgaonkar, M.D.; Kataria, S.K.; Reynaud, Serge; )

2004-01-01

Electronics Division, BARC has been working on the development of multi-channel ASIC, called SPAIR (Silicon-strip Pulse Amplifier Integrated Readout). It contains 8 channels of preamplifier, shaper and track-and-hold circuitry. Electronics Division has also actively participated in development of test setup for the front-end ASIC, called PACE, for the preshower detector of the Compact Muon Solenoid (CMS) Experiment at CERN, Geneva. PACE is a 32 channel ASIC for silicon strip detector, containing preamplifier, shaper, calibration circuitry, switched capacitor array, readout amplifier per channel and an analog multiplexer. A VME Readout Module, (VRM) is developed which can be utilized in data acquisition from ASICs like PACE and SPAIR. The VRM can also be used as the Detector Dependent Unit for digitally processing the data received from the front-end electronics on the 16-bit LVDS port. The processed, data can be read by the VME system. Thus the VRM is very useful in building an ASIC characterization system and/or the automated ASIC production testing system. It can be used also to build the applications using such ASICs. To cater to various requirements arising in future, variety of VME modules are to be developed like ADCs, DACs and D 1/0. VME interface remains a common part to all these modules. The different functional blocks of these modules can be designed and fabricated on small piggyback boards (called Test Boards) and mounted on the VRM, which provides the common VME interface. The design details and uses of VRM are presented here. (author)

Structural and electronic properties of the transition layer at the SiO2/4H-SiC interface

Directory of Open Access Journals (Sweden)

Wenbo Li

2015-01-01

Full Text Available Using first-principles methods, we generate an amorphous SiO2/4H-SiC interface with a transition layer. Based this interface model, we investigate the structural and electronic properties of the interfacial transition layer. The calculated Si 2p core-level shifts for this interface are comparable to the experimental data, indicating that various SiCxOy species should be present in this interface transition layer. The analysis of the electronic structures reveals that the tetrahedral SiCxOy structures cannot introduce any of the defect states at the interface. Interestingly, our transition layer also includes a C-C=C trimer and SiO5 configurations, which lead to the generation of interface states. The accurate positions of Kohn-Sham energy levels associated with these defects are further calculated within the hybrid functional scheme. The Kohn-Sham energy levels of the carbon trimer and SiO5 configurations are located near the conduction and valence band of bulk 4H-SiC, respectively. The result indicates that the carbon trimer occurred in the transition layer may be a possible origin of near interface traps. These findings provide novel insight into the structural and electronic properties of the realistic SiO2/SiC interface.

First-principles investigation of the electronic states at perovskite and pyrite hetero-interfaces

KAUST Repository

Nazir, Safdar

2012-09-01

Oxide heterostructures are attracting huge interest in recent years due to the special functionalities of quasi two-dimensional quantum gases. In this thesis, the electronic states at the interface between perovskite oxides and pyrite compounds have been studied by first-principles calculations based on density functional theory. Optimization of the atomic positions are taken into account, which is considered very important at interfaces, as observed in the case of LaAlO3/SrTiO3. The creation of metallic states at the interfaces thus is explained in terms of charge transfer between the transition metal and oxygen atoms near the interface. It is observed that with typical thicknesses of at least 10-12 °A the gases still extend considerably in the third dimension, which essentially determines the magnitude of quantum mechanical effects. To overcome this problem, we propose incorporation of highly electronegative cations (such as Ag) in the oxides. A fundamental interest is also the thermodynamic stability of the interfaces due to the possibility of atomic intermixing in the interface region. Therefore, different cation intermixed configurations are taken into account for the interfaces aiming at the energetically stable state. The effect of O vacancies is also discussed for both polar and non-polar heterostructures. The interface metallicity is enhanced for the polar system with the creation of O vacancies, while the clean interface at the non-polar heterostructure exhibits an insulating state and becomes metallic in presence of O vacancy. The O vacancy formation energies are calculated and explained in terms of the increasing electronegativity and effective volume of A the side cation. Along with these, the electronic and magnetic properties of an interface between the ferromagnetic metal CoS2 and the non-magnetic semiconductor FeS2 is investigated. We find that this contact shows a metallic character. The CoS2 stays quasi half metallic at the interface, while the

Development of user interface to support automatic program generation of nuclear power plant analysis by module-based simulation system

International Nuclear Information System (INIS)

Yoshikawa, Hidekazu; Mizutani, Naoki; Nakaya, Ken-ichiro; Wakabayashi, Jiro

1988-01-01

Module-based Simulation System (MSS) has been developed to realize a new software work environment enabling versatile dynamic simulation of a complex nuclear power system flexibly. The MSS makes full use of modern software technology to replace a large fraction of human software works in complex, large-scale program development by computer automation. Fundamental methods utilized in MSS and developmental study on human interface system SESS-1 to help users in generating integrated simulation programs automatically are summarized as follows: (1) To enhance usability and 'communality' of program resources, the basic mathematical models of common usage in nuclear power plant analysis are programed as 'modules' and stored in a module library. The information on usage of individual modules are stored in module database with easy registration, update and retrieval by the interactive management system. (2) Target simulation programs and the input/output files are automatically generated with simple block-wise languages by a precompiler system for module integration purpose. (3) Working time for program development and analysis in an example study of an LMFBR plant thermal-hydraulic transient analysis was demonstrated to be remarkably shortened, with the introduction of an interface system SESS-1 developed as an automatic program generation environment. (author)

A generalized interface module for the coupling of spatial kinetics and thermal-hydraulics codes

Energy Technology Data Exchange (ETDEWEB)

Barber, D.A.; Miller, R.M.; Joo, H.G.; Downar, T.J. [Purdue Univ., West Lafayette, IN (United States). Dept. of Nuclear Engineering; Wang, W. [SCIENTECH, Inc., Rockville, MD (United States); Mousseau, V.A.; Ebert, D.D. [Nuclear Regulatory Commission, Washington, DC (United States). Office of Nuclear Regulatory Research

1999-03-01

A generalized interface module has been developed for the coupling of any thermal-hydraulics code to any spatial kinetics code. The coupling scheme was designed and implemented with emphasis placed on maximizing flexibility while minimizing modifications to the respective codes. In this design, the thermal-hydraulics, general interface, and spatial kinetics codes function independently and utilize the Parallel Virtual Machine software to manage cross-process communication. Using this interface, the USNRC version of the 3D neutron kinetics code, PARCX, has been coupled to the USNRC system analysis codes RELAP5 and TRAC-M. RELAP5/PARCS assessment results are presented for two NEACRP rod ejection benchmark problems and an NEA/OECD main steam line break benchmark problem. The assessment of TRAC-M/PARCS has only recently been initiated, nonetheless, the capabilities of the coupled code are presented for a typical PWR system/core model.

A generalized interface module for the coupling of spatial kinetics and thermal-hydraulics codes

International Nuclear Information System (INIS)

Barber, D.A.; Miller, R.M.; Joo, H.G.; Downar, T.J.; Mousseau, V.A.; Ebert, D.D.

1999-01-01

A generalized interface module has been developed for the coupling of any thermal-hydraulics code to any spatial kinetics code. The coupling scheme was designed and implemented with emphasis placed on maximizing flexibility while minimizing modifications to the respective codes. In this design, the thermal-hydraulics, general interface, and spatial kinetics codes function independently and utilize the Parallel Virtual Machine software to manage cross-process communication. Using this interface, the USNRC version of the 3D neutron kinetics code, PARCX, has been coupled to the USNRC system analysis codes RELAP5 and TRAC-M. RELAP5/PARCS assessment results are presented for two NEACRP rod ejection benchmark problems and an NEA/OECD main steam line break benchmark problem. The assessment of TRAC-M/PARCS has only recently been initiated, nonetheless, the capabilities of the coupled code are presented for a typical PWR system/core model

Interface engineering of semiconductor/dielectric heterojunctions toward functional organic thin-film transistors.

Science.gov (United States)

Zhang, Hongtao; Guo, Xuefeng; Hui, Jingshu; Hu, Shuxin; Xu, Wei; Zhu, Daoben

2011-11-09

Interface modification is an effective and promising route for developing functional organic field-effect transistors (OFETs). In this context, however, researchers have not created a reliable method of functionalizing the interfaces existing in OFETs, although this has been crucial for the technological development of high-performance CMOS circuits. Here, we demonstrate a novel approach that enables us to reversibly photocontrol the carrier density at the interface by using photochromic spiropyran (SP) self-assembled monolayers (SAMs) sandwiched between active semiconductors and gate insulators. Reversible changes in dipole moment of SPs in SAMs triggered by lights with different wavelengths produce two distinct built-in electric fields on the OFET that can modulate the channel conductance and consequently threshold voltage values, thus leading to a low-cost noninvasive memory device. This concept of interface functionalization offers attractive new prospects for the development of organic electronic devices with tailored electronic and other properties.

Dimmable electronic ballasts by variable power density modulation technique

Science.gov (United States)

Borekci, Selim; Kesler, Selami

2014-11-01

Dimming can be accomplished commonly by switching frequency and pulse density modulation techniques and a variable inductor. In this study, a variable power density modulation (VPDM) control technique is proposed for dimming applications. A fluorescent lamp is operated in several states to meet the desired lamp power in a modulation period. The proposed technique has the same advantages of magnetic dimming topologies have. In addition, a unique and flexible control technique can be achieved. A prototype dimmable electronic ballast is built and experiments related to it have been conducted. As a result, a 36WT8 fluorescent lamp can be driven for a desired lamp power from several alternatives without modulating the switching frequency.

Molecular-structure control of ultrafast electron injection at cationic porphyrin-CdTe quantum dot interfaces

KAUST Repository

Aly, Shawkat Mohammede

2015-03-05

Charge transfer (CT) at donor (D)/acceptor (A) interfaces is central to the functioning of photovoltaic and light-emitting devices. Understanding and controlling this process on the molecular level has been proven to be crucial for optimizing the performance of many energy-challenge relevant devices. Here, we report the experimental observations of controlled on/off ultrafast electron transfer (ET) at cationic porphyrin-CdTe quantum dot (QD) interfaces using femto- and nanosecond broad-band transient absorption (TA) spectroscopy. The time-resolved data demonstrate how one can turn on/off the electron injection from porphyrin to the CdTe QDs. With careful control of the molecular structure, we are able to tune the electron injection at the porphyrin-CdTe QD interface from zero to very efficient and ultrafast. In addition, our data demonstrate that the ET process occurs within our temporal resolution of 120 fs, which is one of the fastest times recorded for organic photovoltaics. © 2015 American Chemical Society.

Local electronic structure at organic–metal interface studied by UPS, MAES, and first-principles calculation

Energy Technology Data Exchange (ETDEWEB)

Aoki, M., E-mail: cmaoki@mail.ecc.u-tokyo.ac.jp; Masuda, S.

2015-10-01

Understanding and controlling local electronic structures at organic–metal interfaces are crucial for fabricating novel organic-based electronics, as in the case of heterojunctions in semiconductor devices. Here, we report recent studies of valence electronic states at organic–metal interfaces (especially those near the Fermi level of a metal substrate) by the combined analysis of ultraviolet photoemission spectroscopy (UPS), metastable atom electron spectroscopy (MAES), and first-principles calculations. New electronic states in the HOMO (highest occupied molecular orbital)–LUMO (lowest unoccupied molecular orbital) gap formed at an organic–metal interface are classified as a chemisorption-induced gap state (CIGS) and a complex-based gap state (CBGS). The CIGS is further characterized by an asymptotic feature of the metal wave function in the chemisorbed species. The CIGSs in alkanethiolates on Pt(1 1 1) and C{sub 60} on Pt(1 1 1) can be regarded as damping and propagating types, respectively. The CBGSs in K-doped dibenzopentacene (DBP) are composed of DBP-derived MOs and K sp states and distributed over the complex film. No metallic structures were found in the K{sub 1}DBP and K{sub 3}DBP phases, suggesting that they are Mott–Hubbard insulators due to strong electron correlation. The local electronic structures of a pentacene film bridged by Au electrodes under bias voltages were examined by an FET-like specimen. The pentacene-derived bands were steeply shifted at the positively biased electrode, reflecting the p-type character of the film.

Fluctuation in Interface and Electronic Structure of Single-Molecule Junctions Investigated by Current versus Bias Voltage Characteristics.

Science.gov (United States)

Isshiki, Yuji; Fujii, Shintaro; Nishino, Tomoaki; Kiguchi, Manabu

2018-03-14

Structural and electronic detail at the metal-molecule interface has a significant impact on the charge transport across the molecular junctions, but its precise understanding and control still remain elusive. On the single-molecule scale, the metal-molecule interface structures and relevant charge transport properties are subject to fluctuation, which contain the fundamental science of single-molecule transport and implication for manipulability of the transport properties in electronic devices. Here, we present a comprehensive approach to investigate the fluctuation in the metal-molecule interface in single-molecule junctions, based on current-voltage ( I- V) measurements in combination with first-principles simulation. Contrary to conventional molecular conductance studies, this I- V approach provides a correlated statistical description of both the degree of electronic coupling across the metal-molecule interface and the molecular orbital energy level. This statistical approach was employed to study fluctuation in single-molecule junctions of 1,4-butanediamine (DAB), pyrazine (PY), 4,4'-bipyridine (BPY), and fullerene (C 60 ). We demonstrate that molecular-dependent fluctuation of σ-, π-, and π-plane-type interfaces can be captured by analyzing the molecular orbital (MO) energy level under mechanical perturbation. While the MO level of DAB with the σ-type interface shows weak distance dependence and fluctuation, the MO level of PY, BPY, and C 60 features unique distance dependence and molecular-dependent fluctuation against the mechanical perturbation. The MO level of PY and BPY with the σ+π-type interface increases with the increase in the stretch distance. In contrast, the MO level of C 60 with the π-plane-type interface decreases with the increase in the stretching perturbation. This study provides an approach to resolve the structural and electronic fluctuation in the single-molecule junctions and insight into the molecular-dependent fluctuation in

Correlating electronic and geometric structures of organic films and interfaces by means of synchrotron radiation based techniques

International Nuclear Information System (INIS)

Yamane, Hiroyuki

2013-01-01

The electronic structure of organic thin films and interfaces plays a crucial role in the performance of optoelectronic devices using organic semiconductors, and is seriously dominated by the geometric film/interface structure due to the anisotropic spatial distribution of molecular orbitals. This paper briefly reviews the recent progress of the examination of correlating electronic structure and geometric structure of archetypal organic semiconductor thin films and interfaces by using spectroscopic experiments with synchrotron radiation such as angle-resolved photoelectron spectroscopy, x-ray absorption spectroscopy, and x-ray standing wave. (author)

Ultrafast Electron Transfer at Organic Semiconductor Interfaces: Importance of Molecular Orientation

KAUST Repository

Ayzner, Alexander L.

2015-01-02

© 2014 American Chemical Society. Much is known about the rate of photoexcited charge generation in at organic donor/acceptor (D/A) heterojunctions overaged over all relative arrangements. However, there has been very little experimental work investigating how the photoexcited electron transfer (ET) rate depends on the precise relative molecular orientation between D and A in thin solid films. This is the question that we address in this work. We find that the ET rate depends strongly on the relative molecular arrangement: The interface where the model donor compound copper phthalocyanine is oriented face-on with respect to the fullerene C60 acceptor yields a rate that is approximately 4 times faster than that of the edge-on oriented interface. Our results suggest that the D/A electronic coupling is significantly enhanced in the face-on case, which agrees well with theoretical predictions, underscoring the importance of controlling the relative interfacial molecular orientation.

Ultrafast Electron Transfer at Organic Semiconductor Interfaces: Importance of Molecular Orientation

KAUST Repository

Ayzner, Alexander L.; Nordlund, Dennis; Kim, Do-Hwan; Bao, Zhenan; Toney, Michael F.

2015-01-01

© 2014 American Chemical Society. Much is known about the rate of photoexcited charge generation in at organic donor/acceptor (D/A) heterojunctions overaged over all relative arrangements. However, there has been very little experimental work investigating how the photoexcited electron transfer (ET) rate depends on the precise relative molecular orientation between D and A in thin solid films. This is the question that we address in this work. We find that the ET rate depends strongly on the relative molecular arrangement: The interface where the model donor compound copper phthalocyanine is oriented face-on with respect to the fullerene C60 acceptor yields a rate that is approximately 4 times faster than that of the edge-on oriented interface. Our results suggest that the D/A electronic coupling is significantly enhanced in the face-on case, which agrees well with theoretical predictions, underscoring the importance of controlling the relative interfacial molecular orientation.

Electronic properties of metal-organic and organic-organic interfaces studied by photoemission and photoabsorption spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Molodtsova, Olga

2006-07-01

In this work systematic studies of the organic semiconductor CuPc have been presented. In general the investigation can be devided in three parts. In the first one we have studied the electronic structure of clean CuPc thin film. The next two parts are devoted to organic-organic and metal-organic interface formation, where one of the interface components is CuPc thin film. The main results of this thesis are: - The electronic structure of the pristine organic semiconductor CuPc has been obtained by a combination of conventional and resonant photoemission, near-edge X-ray absorption, as well as by theoretical ab initio quantum-chemical calculations. The contributions of different atomic species as well as sites of the CuPc molecule to the electronic DOS has been established. A combined experimental and theoretical study of the unoccupied electronic density of states of CuPc was presented. - The electronic properties of the organic heterointerfaces between fullerite and pristine copper phthalocyanine were studied. Both interfaces, CuPc/C{sub 60} and C{sub 60}/CuPc, were found to be non-reactive with pronounced shifts of the vacuum level pointing to the formation of an interfacial dipole mainly at the CuPc side of the heterojunctions. The dipole values are close to the difference of the work functions of the two materials. Important interface parameters and hole-injection barriers were obtained. The sequence of deposition does not influence the electronic properties of the interfaces. - CuPc doped with potassium was studied by means of photoemission and photoabsorption spectroscopy. A detailed analysis of the core-level PE spectra allows one to propose possible lattice sites, which harbor the potassium ions. The films prepared in this thesis showed no finite electronic density of states at the Fermi level. - Two stages of the In/CuPc interface formation have been distinguished. The low-coverage stage is characterized by a strong diffusion of the In atoms into the

As We May Think and Be: Brain-computer interfaces to expand the substrate of mind

Directory of Open Access Journals (Sweden)

Mijail Demian Serruya

2015-04-01

Full Text Available Over a half-century ago, the scientist Vannevar Bush explored the conundrum of how to tap the exponentially rising sea of human knowledge for the betterment of humanity. In his description of a hypothetical electronic library he dubbed the memex, he anticipated internet search and online encyclopedias (Bush, 1945. By blurring the boundary between brain and computer, brain-computer interfaces (BCI could lead to more efficient use of electronic resources (Schalk, 2008. We could expand the substrate of the mind itself rather than merely interfacing it to external computers. Components of brain-computer interfaces could be re-arranged to create brain-brain interfaces, or tightly interconnected links between a person’s brain and ectopic neural modules. Such modules – whether sitting in a bubbling Petri dish, rendered in reciprocally linked integrated circuits, or implanted in our belly – would mark the first step on to a path of breaking out of the limitations imposed by our phylogenetic past Novel BCI architectures could generate novel abilities to navigate and access information that might speed translational science efforts and push the boundaries of human knowledge in an unprecedented manner.

Study of charge distribution and atomic arrangement at interfaces using fast electron scattering

International Nuclear Information System (INIS)

Hugsted, B.

1993-01-01

The principle of fast electron scattering at a potential step has been elucidated. It has been shown that electrons scattered in the near forward direction bring significant information of the potential step at an interface. Experiments have been shown where the interface between AlAs and GaAs in a MBE-grown sample is visible as a bright or dark line in the image, depending on the location of the dark field aperture. The asymmetric intensity distribution in reciprocal space has been shown using an improved phase grating approximation. The author puts forward the argument that neither the normal dark-field technique in the electron microscope nor the usual reciprocal space calculation techniques for image simulation are suited for this type of experiments. This argumentation is followed by the proposal of an improved dark field technique with high resolution in reciprocal space, and the development of a calculation technique (performed in real space) that is suitable for the calculation of electron scattering from non-periodic objects. 28 refs

Atomic and electronic structures of lattice mismatched Cu{sub 2}O/TiO{sub 2} interfaces

Energy Technology Data Exchange (ETDEWEB)

Wang, Shuzhi [Materials Sciences Division, Lawrence Berkeley National Laboratory, One Cyclotron Road, Mail Stop 66, Berkeley, California 94720 (United States); Kavaipatti, Balasubramaniam; Ramesh, Ramamoorthy [Department of Materials Science and Engineering, University of California at Berkeley, Berkeley, California 94720 (United States); Kim, Sung-Joo; Pan, Xiaoqing [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Ager, Joel W.; Wang, Lin-Wang, E-mail: lwwang@lbl.gov [Materials Sciences Division, Lawrence Berkeley National Laboratory, One Cyclotron Road, Mail Stop 66, Berkeley, California 94720 (United States); Joint Center of Artificial Photosynthesis, Berkeley, California 94720 (United States)

2014-05-26

Heterojunction interfaces between metal oxides are often highly lattice mismatched. The atomic and electronic structures of such interfaces, however, are not well understood. We have synthesized Cu{sub 2}O/TiO{sub 2} heterojunction thin films with 13% lattice mismatch and studied the interface via experimental methods and large-scale density function theory calculations of supercells containing ∼1300 atoms. We find that an interface of epitaxial quality is formed via a coincidence site lattice of 8 Cu{sub 2}O unit cells matching 9 TiO{sub 2} unit cells. Calculations reveal the existence of a dislocation core of the O sublattices at the interface and a random arrangement of one layer of interfacial Cu atoms. The interfacial electronic structure is found to be mostly determined by the interfacial Cu distribution, rather than by the O dislocation core. The conduction band minimum and valence band maximum states are spatially separated, and there is no strongly localized state near the core.

Spectromicroscopic Insights into the Morphology and Interfaces of Operational Organic Electronic Devices

OpenAIRE

Du, Xiaoyan

2017-01-01

Organic electronics, e.g., organic field-effect transistors (OFETs), organic solar cells (OSCs) and organic light-emitting diodes (OLEDs), have attracted strong interest in both academia and industry during the last decades due to their unique capabilities offered by organic semiconductors. The micro-/nano-structures in active layers and the interface engineering in organic electronics are extremely important for desired device functionalities. In this thesis, the structure-function relations...

Socio-technical considerations in epilepsy electronic patient record implementation.

LENUS (Irish Health Repository)

Mc Quaid, Louise

2010-05-01

Examination of electronic patient record (EPR) implementation at the socio-technical interface. This study was based on the introduction of an anti-epileptic drug (AED) management module of an EPR in an epilepsy out-patient clinic. The objective was to introduce the module to a live clinical setting within strictly controlled conditions to evaluate its usability and usefulness.

Development of a user interface style guide for the reactor protection system cabinet operator module

International Nuclear Information System (INIS)

Lee, Hyun-Chul; Lee, Dong-Young; Lee, Jung-Woon

2004-01-01

The reactor protection system (RPS) plays the roles of generating the reactor trip signal and the engineered safety features (ESF) actuation signal when the monitored plant processes reach the predefined limits. A Korean project group is developing a new digitalized RPS and the Cabinet Operator Module (COM) of the RPS is used for the RPS integrity testing and monitoring by an equipment operator. A flat panel display (FPD) with a touch screen capability is provided as a main user interface for the RPS operation. To support the RPS COM user interface design, actually the FPD screen design, we developed a user interface style guide because the system designer could not properly deal with the many general human factors design guidelines. To develop the user interface style guide, various design guideline gatherings, a walk-though with a video recorder, guideline selection with respect to user interface design elements, determination of the properties of the design elements, discussion with system designers, and a conversion of the properties into the screen design were carried out. This paper describes the process details and the findings in the course of the style guide development. (Author)

User-Centered Design, Experience, and Usability of an Electronic Consent User Interface to Facilitate Informed Decision-Making in an HIV Clinic.

Science.gov (United States)

Ramos, S Raquel

2017-11-01

Health information exchange is the electronic accessibility and transferability of patient medical records across various healthcare settings and providers. In some states, patients have to formally give consent to allow their medical records to be electronically shared. The purpose of this study was to apply a novel user-centered, multistep, multiframework approach to design and test an electronic consent user interface, so patients with HIV can make more informed decisions about electronically sharing their health information. This study consisted of two steps. Step 1 was a cross-sectional, descriptive, qualitative study that used user-centric design interviews to create the user interface. This informed Step 2. Step 2 consisted of a one group posttest to examine perceptions of usefulness, ease of use, preference, and comprehension of a health information exchange electronic consent user interface. More than half of the study population had college experience, but challenges remained with overall comprehension regarding consent. The user interface was not independently successful, suggesting that in addition to an electronic consent user interface, human interaction may also be necessary to address the complexities associated with consenting to electronically share health information. Comprehension is key factor in the ability to make informed decisions.

Factors affecting physicians’ use of a dedicated overview interface in an electronic health record

DEFF Research Database (Denmark)

Jensen, Lotte Groth; Bossen, Claus

2016-01-01

Background : It remains a continual challenge to present information in user interfaces in large IT systems to support overview in the best possible way. We here examine how an Electronic Health Record (EHR) supports the creation of overview among hospital physicians with a particular focus...... the reasons for its use and non-use Method: We conducted exploratory ethnographic fieldwork among physicians in two hospitals and gathered statistical data on their use of the overview interface. From the quantitative data, we identified where the interface was used most and conducted 18 semi-structured, open-ended...... on the use of an interface designed to provide clinicians with a patient information overview. The overview interface integrates information flexibly from diverse places in the EHR and presents this information in one screen display. Our study revealed widespread non-use of the overview interface. We explore...

Si-based optical I/O for optical memory interface

Science.gov (United States)

Ha, Kyoungho; Shin, Dongjae; Byun, Hyunil; Cho, Kwansik; Na, Kyoungwon; Ji, Hochul; Pyo, Junghyung; Hong, Seokyong; Lee, Kwanghyun; Lee, Beomseok; Shin, Yong-hwack; Kim, Junghye; Kim, Seong-gu; Joe, Insung; Suh, Sungdong; Choi, Sanghoon; Han, Sangdeok; Park, Yoondong; Choi, Hanmei; Kuh, Bongjin; Kim, Kichul; Choi, Jinwoo; Park, Sujin; Kim, Hyeunsu; Kim, Kiho; Choi, Jinyong; Lee, Hyunjoo; Yang, Sujin; Park, Sungho; Lee, Minwoo; Cho, Minchang; Kim, Saebyeol; Jeong, Taejin; Hyun, Seokhun; Cho, Cheongryong; Kim, Jeong-kyoum; Yoon, Hong-gu; Nam, Jeongsik; Kwon, Hyukjoon; Lee, Hocheol; Choi, Junghwan; Jang, Sungjin; Choi, Joosun; Chung, Chilhee

2012-01-01

Optical interconnects may provide solutions to the capacity-bandwidth trade-off of recent memory interface systems. For cost-effective optical memory interfaces, Samsung Electronics has been developing silicon photonics platforms on memory-compatible bulk-Si 300-mm wafers. The waveguide of 0.6 dB/mm propagation loss, vertical grating coupler of 2.7 dB coupling loss, modulator of 10 Gbps speed, and Ge/Si photodiode of 12.5 Gbps bandwidth have been achieved on the bulk-Si platform. 2x6.4 Gbps electrical driver circuits have been also fabricated using a CMOS process.

Mechanically Compliant Electronic Materials for Wearable Photovoltaics and Human-Machine Interfaces

Science.gov (United States)

O'Connor, Timothy Francis, III

Applications of stretchable electronic materials for human-machine interfaces are described herein. Intrinsically stretchable organic conjugated polymers and stretchable electronic composites were used to develop stretchable organic photovoltaics (OPVs), mechanically robust wearable OPVs, and human-machine interfaces for gesture recognition, American Sign Language Translation, haptic control of robots, and touch emulation for virtual reality, augmented reality, and the transmission of touch. The stretchable and wearable OPVs comprise active layers of poly-3-alkylthiophene:phenyl-C61-butyric acid methyl ester (P3AT:PCBM) and transparent conductive electrodes of poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) and devices could only be fabricated through a deep understanding of the connection between molecular structure and the co-engineering of electronic performance with mechanical resilience. The talk concludes with the use of composite piezoresistive sensors two smart glove prototypes. The first integrates stretchable strain sensors comprising a carbon-elastomer composite, a wearable microcontroller, low energy Bluetooth, and a 6-axis accelerometer/gyroscope to construct a fully functional gesture recognition glove capable of wirelessly translating American Sign Language to text on a cell phone screen. The second creates a system for the haptic control of a 3D printed robot arm, as well as the transmission of touch and temperature information.

Delivery of modulated electron beams with conventional photon multi-leaf collimators

International Nuclear Information System (INIS)

Klein, Eric E; Mamalui-Hunter, Maria; Low, Daniel A

2009-01-01

Electron beam radiotherapy is an accepted method to treat shallow tumors. However, modulation of electrons to customize dose distributions has not readily been achieved. Studies of bolus and tertiary collimation systems have been met with limitations. We pursue the use of photon multi-leaf collimators (MLC) for modulated electron radiotherapy (MERT) to achieve customized distributions for potential clinical use. As commercial planning systems do not support the use of MLC with electrons, planning was conducted using Monte Carlo calculations. Segmented and dynamic modulated delivery of multiple electron segments was configured, calculated and delivered for validation. Delivery of electrons with segmented or dynamic leaf motion was conducted. A phantom possessing an idealized stepped target was planned and optimized with subsequent validation by measurements. Finally, clinical treatment plans were conducted for post-mastectomy and cutaneous lymphoma of the scalp using forward optimization techniques. Comparison of calculations and measurements was successful with agreement of ±2%/2 mm for the energies, segment sizes, depths tested for delivered segments for the dynamic and segmented delivery. Clinical treatment plans performed provided optimal dose coverage of the target while sparing distal organs at risk. Execution of plans using an anthropomorphic phantom to ensure safe and efficient delivery was conducted. Our study validates that MERT is not only possible using the photon MLC, but the efficient and safe delivery inherent with the dynamic delivery provides an ideal technique for shallow tumor treatment.

Integrated graphene based modulators enabled by interfacing plasmonic slot and silicon waveguides

DEFF Research Database (Denmark)

Xiao, Sanshui

Graphene has offered a new paradigm for extremely fast and active optoelectronic devices due to its unique electronic and optical properties [1]. With the combination of high-index dielectric waveguides/resonators, several integrated graphene-based optical modulators have already been demonstrated...

The Design of a Graphical User Interface for an Electronic Classroom.

Science.gov (United States)

Cahalan, Kathleen J.; Levin, Jacques

2000-01-01

Describes the design of a prototype for the graphical user interface component of an electronic classroom (ECR) application that supports real-time lectures and question-and-answer sessions between an instructor and students. Based on requirements analysis and an analysis of competing products, a Web-based ECR prototype was produced. Findings show…

Modulation of Posterior Alpha Activity by Spatial Attention Allows for Controlling A Continuous Brain-Computer Interface

NARCIS (Netherlands)

Horschig, J.M.; Oosterheert, W.; Oostenveld, R.; Jensen, O.

2015-01-01

Here we report that the modulation of alpha activity by covert attention can be used as a control signal in an online brain-computer interface, that it is reliable, and that it is robust. Subjects were instructed to orient covert visual attention to the left or right hemifield. We decoded the

The tracking of interfaces in an electron-beam vaporizer

International Nuclear Information System (INIS)

Westerberg, K.W.; McClelland, M.A.; Finlayson, B.A.

1993-03-01

A numerical analysis is made of the material and energy flow in an electron beam vaporizer. In this system the energy from an electron beam heats metal confined in a water-cooled crucible. Metal is vaporized from a liquid pool circulating in a shell of its own solid. A modified Galerkin finite element method is used to calculate the flow and temperature fields along with the interface locations. The mesh is parameterized with spines which stretch and pivot as the phase boundaries move. The discretized equations are arranged in an ''arrow'' matrix and solved using the Newton-Raphson method. Results are given for an experimental aluminum vaporizer. The effects of buoyancy and capillary driven flow are included along with the surface contributions of vapor thrust, latent heat, thermal radiation, and crucible contact resistance

A Brain Computer Interface for Robust Wheelchair Control Application Based on Pseudorandom Code Modulated Visual Evoked Potential

DEFF Research Database (Denmark)

Mohebbi, Ali; Engelsholm, Signe K.D.; Puthusserypady, Sadasivan

2015-01-01

In this pilot study, a novel and minimalistic Brain Computer Interface (BCI) based wheelchair control application was developed. The system was based on pseudorandom code modulated Visual Evoked Potentials (c-VEPs). The visual stimuli in the scheme were generated based on the Gold code...

A pipeline for comprehensive and automated processing of electron diffraction data in IPLT.

Science.gov (United States)

Schenk, Andreas D; Philippsen, Ansgar; Engel, Andreas; Walz, Thomas

2013-05-01

Electron crystallography of two-dimensional crystals allows the structural study of membrane proteins in their native environment, the lipid bilayer. Determining the structure of a membrane protein at near-atomic resolution by electron crystallography remains, however, a very labor-intense and time-consuming task. To simplify and accelerate the data processing aspect of electron crystallography, we implemented a pipeline for the processing of electron diffraction data using the Image Processing Library and Toolbox (IPLT), which provides a modular, flexible, integrated, and extendable cross-platform, open-source framework for image processing. The diffraction data processing pipeline is organized as several independent modules implemented in Python. The modules can be accessed either from a graphical user interface or through a command line interface, thus meeting the needs of both novice and expert users. The low-level image processing algorithms are implemented in C++ to achieve optimal processing performance, and their interface is exported to Python using a wrapper. For enhanced performance, the Python processing modules are complemented with a central data managing facility that provides a caching infrastructure. The validity of our data processing algorithms was verified by processing a set of aquaporin-0 diffraction patterns with the IPLT pipeline and comparing the resulting merged data set with that obtained by processing the same diffraction patterns with the classical set of MRC programs. Copyright © 2013 Elsevier Inc. All rights reserved.

Electronic structure of disordered alloys, surfaces and interfaces

CERN Document Server

Turek, Ilja; Kudrnovský, Josef; Šob, Mojmír; Weinberger, Peter

1997-01-01

At present, there is an increasing interest in the prediction of properties of classical and new materials such as substitutional alloys, their surfaces, and metallic or semiconductor multilayers. A detailed understanding based on a thus of the utmost importance for fu­ microscopic, parameter-free approach is ture developments in solid state physics and materials science. The interrela­ tion between electronic and structural properties at surfaces plays a key role for a microscopic understanding of phenomena as diverse as catalysis, corrosion, chemisorption and crystal growth. Remarkable progress has been made in the past 10-15 years in the understand­ ing of behavior of ideal crystals and their surfaces by relating their properties to the underlying electronic structure as determined from the first principles. Similar studies of complex systems like imperfect surfaces, interfaces, and mul­ tilayered structures seem to be accessible by now. Conventional band-structure methods, however, are of limited use ...

All-optical time-resolved measurement of laser energy modulation in a relativistic electron beam

Directory of Open Access Journals (Sweden)

D. Xiang

2011-11-01

Full Text Available We propose and demonstrate an all-optical method to measure laser energy modulation in a relativistic electron beam. In this scheme the time-dependent energy modulation generated from the electron-laser interaction in an undulator is converted into time-dependent density modulation with a chicane, which is measured to infer the laser energy modulation. The method, in principle, is capable of simultaneously providing information on femtosecond time scale and 10^{-5} energy scale not accessible with conventional methods. We anticipate that this method may have wide applications in many laser-based advanced beam manipulation techniques.

High energy photoelectron spectroscopy in basic and applied science: Bulk and interface electronic structure

Energy Technology Data Exchange (ETDEWEB)

Knut, Ronny; Lindblad, Rebecka [Department of Physics and Astronomy, Uppsala University, SE-751 21 Uppsala (Sweden); Gorgoi, Mihaela [Helmholtz Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein-Str. 15, 12489 Berlin (Germany); Rensmo, Håkan [Department of Physics and Astronomy, Uppsala University, SE-751 21 Uppsala (Sweden); Karis, Olof, E-mail: olof.karis@physics.uu.se [Department of Physics and Astronomy, Uppsala University, SE-751 21 Uppsala (Sweden)

2013-10-15

Highlights: •We demonstrate how hard X-ray photoelectron spectroscopy can be used to investigate interface properties of multilayers. •By combining HAXPES and statistical methods we are able to provide quantitative analysis of the interface diffusion process. •We show how photoionization cross sections can be used to map partial density of states contributions to valence states. •We use HAXPES to provide insight into the valence electronic structure of e.g. multiferroics and dye-sensitized solar cells. -- Abstract: With the access of new high-performance electron spectrometers capable of analyzing electron energies up to the order of 10 keV, the interest for photoelectron spectroscopy has grown and many new applications of the technique in areas where electron spectroscopies were considered to have limited use have been demonstrated over the last few decades. The technique, often denoted hard X-ray photoelectron spectroscopy (HX-PES or HAXPES), to distinguish the experiment from X-ray photoelectron spectroscopy performed at lower energies, has resulted in an increasing interest in photoelectron spectroscopy in many areas. The much increased mean free path at higher kinetic energies, in combination with the elemental selectivity of the core level spectroscopies in general has led to this fact. It is thus now possible to investigate the electronic structure of materials with a substantially enhanced bulk sensitivity. In this review we provide examples from our own research using HAXPES which to date has been performed mainly at the HIKE facility at the KMC-1 beamline at HZB, Berlin. The review exemplifies the new opportunities using HAXPES to address both bulk and interface electronic properties in systems relevant for applications in magnetic storage, energy related research, but also in purely curiosity driven problems.

High energy photoelectron spectroscopy in basic and applied science: Bulk and interface electronic structure

International Nuclear Information System (INIS)

Knut, Ronny; Lindblad, Rebecka; Gorgoi, Mihaela; Rensmo, Håkan; Karis, Olof

2013-01-01

Highlights: •We demonstrate how hard X-ray photoelectron spectroscopy can be used to investigate interface properties of multilayers. •By combining HAXPES and statistical methods we are able to provide quantitative analysis of the interface diffusion process. •We show how photoionization cross sections can be used to map partial density of states contributions to valence states. •We use HAXPES to provide insight into the valence electronic structure of e.g. multiferroics and dye-sensitized solar cells. -- Abstract: With the access of new high-performance electron spectrometers capable of analyzing electron energies up to the order of 10 keV, the interest for photoelectron spectroscopy has grown and many new applications of the technique in areas where electron spectroscopies were considered to have limited use have been demonstrated over the last few decades. The technique, often denoted hard X-ray photoelectron spectroscopy (HX-PES or HAXPES), to distinguish the experiment from X-ray photoelectron spectroscopy performed at lower energies, has resulted in an increasing interest in photoelectron spectroscopy in many areas. The much increased mean free path at higher kinetic energies, in combination with the elemental selectivity of the core level spectroscopies in general has led to this fact. It is thus now possible to investigate the electronic structure of materials with a substantially enhanced bulk sensitivity. In this review we provide examples from our own research using HAXPES which to date has been performed mainly at the HIKE facility at the KMC-1 beamline at HZB, Berlin. The review exemplifies the new opportunities using HAXPES to address both bulk and interface electronic properties in systems relevant for applications in magnetic storage, energy related research, but also in purely curiosity driven problems

An electronic interface for acquisition of 12 delayed gamma-gammacoincidence spectra

International Nuclear Information System (INIS)

Domienikan, Claudio

2001-01-01

An electronic interface has been constructed to be used m conjunctionwith a Time differential Perturbed gamma-gamma Angular Correlation (TDPAC)spectrometer with four BaF 2 detectors. The routing interface is speciallydesigned to work with the Ortec model ADCAM 920-16 multichannel analyzer(MCA) having 16 multiplexed inputs, permitting the simultaneous acquisitionof 12 delayed gamma-gamma coincidence spectra. This innovation provides aconsiderable reduction in the experimental data acquisition time and as aconsequence permits an improvement in the precision of the final results ofthe hyperfine parameters deduced from the TDPAC measurements. The interfaceconsists of two distinct electronic circuits. A novel high performance analogdemultiplexer circuit is used to address the linear pulses from the time toamplitude converter (TAC) to the corresponding MCA inputs, according to thepair of detectors responsible for the given gamma-gamma coincidence.Validation of the gamma-gamma coincidence and control of the analogdemultiplexer are realized by a digital circuit, consisting basically ofmonostable multivibrators and decoders of High-Speed CMOS Logic (HCT). Theperformance of the routing interface was evaluated through several testmeasurements which included the time resolution and linearity of the system,the quadrupolar interaction in 181 Ta(Hf), 181 Ta(HfO 2 ), 111 Cd(Cd)and 111 Cd(Pd) samples, and the hyperfine magnetic field in 181 'Ta(Ni), 11 '1Cd(Ni) and 140 Ce(Gd) samples. The results of the hyperfineinteraction measurements are discussed and compared with previous results andserve to demonstrate the correct and efficient performance of the constructedinterface. (author)

Electric field modulation of electronic structures in InSe and black phosphorus heterostructure

Science.gov (United States)

Ding, Yi-min; Shi, Jun-jie; Zhang, Min; Xia, Congxin; Wu, Meng; Wang, Hui; Cen, Yu-lang; Pan, Shu-hang

2018-01-01

The electronic structures of InSe and black phosphorus (BP) heterostructure modulated by an external electric field (E⊥) have been investigated based on first-principles calculations. We find that InSe/BP has type II band offset with a direct band gap of 0.39 eV, and the electrons (holes) are spatially located in InSe (BP) layer. Meanwhile, the band structures of InSe/BP can be effectively modulated by E⊥. The band gap shows linear variation with E⊥ and its maximum of 0.69 eV is observed when E⊥ is 0.4 V / Å. The InSe/BP experiences a transition from semiconductor to metal with E⊥ of -0.6 and 0.8 V / Å. The band offsets are also modulated by E⊥, resulting in different spatial distribution of electron-hole pairs. Most importantly, the high carrier mobility can be preserved well under E⊥. Our results show that the novel InSe/BP heterostructure has great potential application in electronic and optoelectronic devices.

Quantum coherent optical phase modulation in an ultrafast transmission electron microscope.

Science.gov (United States)

Feist, Armin; Echternkamp, Katharina E; Schauss, Jakob; Yalunin, Sergey V; Schäfer, Sascha; Ropers, Claus

2015-05-14

Coherent manipulation of quantum systems with light is expected to be a cornerstone of future information and communication technology, including quantum computation and cryptography. The transfer of an optical phase onto a quantum wavefunction is a defining aspect of coherent interactions and forms the basis of quantum state preparation, synchronization and metrology. Light-phase-modulated electron states near atoms and molecules are essential for the techniques of attosecond science, including the generation of extreme-ultraviolet pulses and orbital tomography. In contrast, the quantum-coherent phase-modulation of energetic free-electron beams has not been demonstrated, although it promises direct access to ultrafast imaging and spectroscopy with tailored electron pulses on the attosecond scale. Here we demonstrate the coherent quantum state manipulation of free-electron populations in an electron microscope beam. We employ the interaction of ultrashort electron pulses with optical near-fields to induce Rabi oscillations in the populations of electron momentum states, observed as a function of the optical driving field. Excellent agreement with the scaling of an equal-Rabi multilevel quantum ladder is obtained, representing the observation of a light-driven 'quantum walk' coherently reshaping electron density in momentum space. We note that, after the interaction, the optically generated superposition of momentum states evolves into a train of attosecond electron pulses. Our results reveal the potential of quantum control for the precision structuring of electron densities, with possible applications ranging from ultrafast electron spectroscopy and microscopy to accelerator science and free-electron lasers.

In situ atomic-level observation of the formation of platinum silicide at platinum-silicon oxide interfaces under electron irradiation

Directory of Open Access Journals (Sweden)

Takeshi Nagase

2018-05-01

Full Text Available In situ atomic-level observation of the formation of Pt2Si at Pt/SiOx interface by electronic excitation under electron irradiation was performed by using scanning transmission electron microscopy. Scanning of an electron-beam probe stimulates silicide formation at the Pt/SiOx interface; the change in the Pt column corresponding to Pt2Si formation with a crystallographic orientation of (001Pt//(001Pt2Si and [110]Pt//[110]Pt2Si was observed in high-angle annular dark-field images.

Transmission electron microscope interfaced with ion accelerators and its application to materials science

Energy Technology Data Exchange (ETDEWEB)

Abe, Hiroaki; Naramoto, Hiroshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Hojou, Kiichi; Furuno, Shigemi; Tsukamoto, Tetsuo

1997-03-01

We have developed the transmission/analytical electron microscope interfaced with two sets of ion accelerators (TEM-Accelerators Facility) at JAERI-Takasaki. The facility is expected to provide quantitative insights into radiation effects, such as damage evolution, irradiation-induced phase transformation and their stability, through in-situ observation and analysis under ion and/or electron irradiation. The TEM-Accelerators Facility and its application to materials research are reviewed. (author)

Energetic, structural and electronic properties of metal vacancies in strained AlN/GaN interfaces.

Science.gov (United States)

Kioseoglou, J; Pontikis, V; Komninou, Ph; Pavloudis, Th; Chen, J; Karakostas, Th

2015-04-01

AlN/GaN heterostructures have been studied using density-functional pseudopotential calculations yielding the formation energies of metal vacancies under the influence of local interfacial strains, the associated charge distribution and the energies of vacancy-induced electronic states. Interfaces are built normal to the polar direction of the wurtzite structure by joining two single crystals of AlN and GaN that are a few atomic layers thick; thus, periodic boundary conditions generate two distinct heterophase interfaces. We show that the formation energy of vacancies is a function of their distance from the interfaces: the vacancy-interface interaction is found repulsive or attractive, depending on the type of the interface. When the interaction is attractive, the vacancy formation energy decreases with increasing the associated electric charge, and hence the equilibrium vacancy concentration at the interface is greater. This finding can reveal the well-known morphological differences existing between the two types of investigated interfaces. Moreover, we found that the electric charge is strongly localized around the Ga vacancy, while in the case of Al vacancies is almost uniformly distributed throughout the AlN/GaN heterostructure. Crucially, for the applications of heterostructures, metal vacancies introduce deep states in the calculated bandgap at energy levels from 0.5 to 1 eV above the valence band maximum (VBM). It is, therefore, predicted that vacancies could initiate 'green luminescence' i.e. light emission in the energy range of 2.5 eV stemming from electronic transitions between these extra levels, and the conduction band, or energy levels, due to shallow donors.

High speed UNIBUS-VME interface; Interface de alta velocidad VME-UNIBUS

Energy Technology Data Exchange (ETDEWEB)

Olmos, P

1987-07-01

An interface between VME an the UNIBUS of PDP or VAX computer is presented. The system supports high speed parallel communication (up to 1MB/S) and is composed of two modules. One of these is a commercial DR11M board which performs DMA transfers between UNIBUS and the external word. The other is a VME module specifically developed for this application. The interface has been tested under VMS operating system in VAX and VALET-PLUS system for the VME Bus. We describe in detail the VME module and its connection with the DR11M. Software, both in WMS and VALET, is also described. (Author) 7 refs.

Hard X-ray PhotoElectron Spectroscopy of transition metal oxides: Bulk compounds and device-ready metal-oxide interfaces

International Nuclear Information System (INIS)

Borgatti, F.; Torelli, P.; Panaccione, G.

2016-01-01

Highlights: • Hard X-ray PhotoElectron Spectroscopy (HAXPES) applied to buried interfaces of systems involving Transition Metal Oxides. • Enhanced contribution of the s states at high kinetic energies both for valence and core level spectra. • Sensitivity to chemical changes promoted by electric field across metal-oxide interfaces in resistive switching devices. - Abstract: Photoelectron spectroscopy is one of the most powerful tool to unravel the electronic structure of strongly correlated materials also thanks to the extremely large dynamic range in energy, coupled to high energy resolution that this form of spectroscopy covers. The kinetic energy range typically used for photoelectron experiments corresponds often to a strong surface sensitivity, and this turns out to be a disadvantage for the study of transition metal oxides, systems where structural and electronic reconstruction, different oxidation state, and electronic correlation may significantly vary at the surface. We report here selected Hard X-ray PhotoElectron Spectroscopy (HAXPES) results from transition metal oxides, and from buried interfaces, where we highlight some of the important features that such bulk sensitive technique brings in the analysis of electronic properties of the solids.

Hard X-ray PhotoElectron Spectroscopy of transition metal oxides: Bulk compounds and device-ready metal-oxide interfaces

Energy Technology Data Exchange (ETDEWEB)

Borgatti, F., E-mail: francesco.borgatti@cnr.it [Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), Consiglio Nazionale delle Ricerche (CNR), via P. Gobetti 101, Bologna I-40129 (Italy); Torelli, P.; Panaccione, G. [Istituto Officina dei Materiali (IOM)-CNR, Laboratorio TASC, Area Science Park, Trieste I-34149 (Italy)

2016-04-15

Highlights: • Hard X-ray PhotoElectron Spectroscopy (HAXPES) applied to buried interfaces of systems involving Transition Metal Oxides. • Enhanced contribution of the s states at high kinetic energies both for valence and core level spectra. • Sensitivity to chemical changes promoted by electric field across metal-oxide interfaces in resistive switching devices. - Abstract: Photoelectron spectroscopy is one of the most powerful tool to unravel the electronic structure of strongly correlated materials also thanks to the extremely large dynamic range in energy, coupled to high energy resolution that this form of spectroscopy covers. The kinetic energy range typically used for photoelectron experiments corresponds often to a strong surface sensitivity, and this turns out to be a disadvantage for the study of transition metal oxides, systems where structural and electronic reconstruction, different oxidation state, and electronic correlation may significantly vary at the surface. We report here selected Hard X-ray PhotoElectron Spectroscopy (HAXPES) results from transition metal oxides, and from buried interfaces, where we highlight some of the important features that such bulk sensitive technique brings in the analysis of electronic properties of the solids.

Self-consistent electronic-structure calculations for interface geometries

International Nuclear Information System (INIS)

Sowa, E.C.; Gonis, A.; MacLaren, J.M.; Zhang, X.G.

1992-01-01

This paper describes a technique for computing self-consistent electronic structures and total energies of planar defects, such as interfaces, which are embedded in an otherwise perfect crystal. As in the Layer Korringa-Kohn-Rostoker approach, the solid is treated as a set of coupled layers of atoms, using Bloch's theorem to take advantage of the two-dimensional periodicity of the individual layers. The layers are coupled using the techniques of the Real-Space Multiple-Scattering Theory, avoiding artificial slab or supercell boundary conditions. A total-energy calculation on a Cu crystal, which has been split apart at a (111) plane, is used to illustrate the method

A note on the standard electron transfer potential at the interface between two immiscible electrolyte solutions

Czech Academy of Sciences Publication Activity Database

Samec, Zdeněk

2009-01-01

Roč. 55, č. 2 (2009), s. 75-81 ISSN 0034-6691 R&D Projects: GA ČR(CZ) GA203/07/1257 Institutional research plan: CEZ:AV0Z40400503 Keywords : interface between two immiscible electrolyte solutions * interfacial electron transfer * standard electron trasfer potential * homogeneous electron transfer Subject RIV: CG - Electrochemistry

Chitosan to Connect Biology to Electronics: Fabricating the Bio-Device Interface and Communicating Across This Interface

Directory of Open Access Journals (Sweden)

Eunkyoung Kim

2014-12-01

Full Text Available Individually, advances in microelectronics and biology transformed the way we live our lives. However, there remain few examples in which biology and electronics have been interfaced to create synergistic capabilities. We believe there are two major challenges to the integration of biological components into microelectronic systems: (i assembly of the biological components at an electrode address, and (ii communication between the assembled biological components and the underlying electrode. Chitosan possesses a unique combination of properties to meet these challenges and serve as an effective bio-device interface material. For assembly, chitosan’s pH-responsive film-forming properties allow it to “recognize” electrode-imposed signals and respond by self-assembling as a stable hydrogel film through a cathodic electrodeposition mechanism. A separate anodic electrodeposition mechanism was recently reported and this also allows chitosan hydrogel films to be assembled at an electrode address. Protein-based biofunctionality can be conferred to electrodeposited films through a variety of physical, chemical and biological methods. For communication, we are investigating redox-active catechol-modified chitosan films as an interface to bridge redox-based communication between biology and an electrode. Despite significant progress over the last decade, many questions still remain which warrants even deeper study of chitosan’s structure, properties, and functions.

Tunneling of electrons via rotor–stator molecular interfaces: Combined ab initio and model study

Energy Technology Data Exchange (ETDEWEB)

Petreska, Irina, E-mail: irina.petreska@pmf.ukim.mk [Institute of Physics, Faculty of Natural Sciences and Mathematics, Ss. Cyril and Methodius University, PO Box 162, 1000 Skopje, Former Yugolav Republic of Macedonia, The (Macedonia, The Former Yugoslav Republic of); Ohanesjan, Vladimir [Institute of Physics, Faculty of Natural Sciences and Mathematics, Ss. Cyril and Methodius University, PO Box 162, 1000 Skopje, Former Yugolav Republic of Macedonia, The (Macedonia, The Former Yugoslav Republic of); Pejov, Ljupčo [Institute of Chemistry, Department of Physical Chemistry, Ss. Cyril and Methodius University, Arhimedova 5, P.O. Box 162, 1000 Skopje, Former Yugolav Republic of Macedonia, The (Macedonia, The Former Yugoslav Republic of); Kocarev, Ljupčo [Macedonian Academy of Sciences and Arts, Krste Misirkov 2, PO Box 428, 1000 Skopje, Former Yugolav Republic of Macedonia, The (Macedonia, The Former Yugoslav Republic of); Faculty of Computer Science and Engineering, Ss. Cyril and Methodius University, Skopje, Former Yugolav Republic of Macedonia, The (Macedonia, The Former Yugoslav Republic of)

2016-07-01

Tunneling of electrons through rotor–stator anthracene aldehyde molecular interfaces is studied with a combined ab initio and model approach. Molecular electronic structure calculated from first principles is utilized to model different shapes of tunneling barriers. Together with a rectangular barrier, we also consider a sinusoidal shape that captures the effects of the molecular internal structure more realistically. Quasiclassical approach with the Simmons’ formula for current density is implemented. Special attention is paid on conformational dependence of the tunneling current. Our results confirm that the presence of the side aldehyde group enhances the interesting electronic properties of the pure anthracene molecule, making it a bistable system with geometry dependent transport properties. We also investigate the transition voltage and we show that conformation-dependent field emission could be observed in these molecular interfaces at realistically low voltages. The present study accompanies our previous work where we investigated the coherent transport via strongly coupled delocalized orbital by application of Non-equilibrium Green’s Function Formalism.

Organic-​organic interfaces and unoccupied electronic states of thin films of perylene and naphthalene derivatives

DEFF Research Database (Denmark)

Kamounah, Fadhil S.; Komolov, A.S; Juul Møller, Preben

2005-01-01

,4,5,8-naphthalenetetracarboxylic dianhydride (NTCDA, Fig. 1c) film surfaces, respectively, in order to form organic–organic interfaces so that molecules constituting the interfacing layers differ by the substituent group. The surface potential and the density of unoccupied electron states (DOUS) located 5–25 eV above the Fermi...

To what extent can charge localization influence electron injection efficiency at graphene-porphyrin interfaces?

KAUST Repository

Parida, Manas R.

2015-04-28

Controlling the electron transfer process at donor- acceptor interfaces is a research direction that has not yet seen much progress. Here, with careful control of the charge localization on the porphyrin macrocycle using β -Cyclodextrin as an external cage, we are able to improve the electron injection efficiency from cationic porphyrin to graphene carboxylate by 120% . The detailed reaction mechanism is also discussed.

Interfacial bonding and electronic structure of GaN/GaAs interface: A first-principles study

International Nuclear Information System (INIS)

Cao, Ruyue; Zhang, Zhaofu; Wang, Changhong; Li, Haobo; Dong, Hong; Liu, Hui; Wang, Weichao; Xie, Xinjian

2015-01-01

Understanding of GaN interfacing with GaAs is crucial for GaN to be an effective interfacial layer between high-k oxides and III-V materials with the application in high-mobility metal-oxide-semiconductor field effect transistor (MOSFET) devices. Utilizing first principles calculations, here, we investigate the structural and electronic properties of the GaN/GaAs interface with respect to the interfacial nitrogen contents. The decrease of interfacial N contents leads to more Ga dangling bonds and As-As dimers. At the N-rich limit, the interface with N concentration of 87.5% shows the most stability. Furthermore, a strong band offsets dependence on the interfacial N concentration is also observed. The valance band offset of N7 with hybrid functional calculation is 0.51 eV. The electronic structure analysis shows that significant interface states exist in all the GaN/GaAs models with various N contents, which originate from the interfacial dangling bonds and some unsaturated Ga and N atoms. These large amounts of gap states result in Fermi level pinning and essentially degrade the device performance

DFT calculations of strain and interface effects on electronic structures and magnetic properties of L10-FePt/Ag heterojunction of GMR applications

Science.gov (United States)

Pramchu, Sittichain; Jaroenjittichai, Atchara Punya; Laosiritaworn, Yongyut

2018-03-01

In this work, density functional theory (DFT) was employed to investigate the effect of strain and interface on electronic structures and magnetic properties of L10-FePt/Ag heterojunction. Two possible interface structures of L10-FePt(001)/Ag(001), that is, interface between Fe and Ag layers (Fe/Ag) and between Pt and Ag layers (Pt/Ag), were inspected. It was found that Pt/Ag interface is more stable than Fe/Ag interface due to its lower formation energy. Further, under the lattice mismatch induced tensile strain, the enhancement of magnetism for both Fe/Ag and Pt/Ag interface structures has been found to have progressed, though the magnetic moments of "interfacial" Fe and Pt atoms have been found to have decreased. To explain this further, the local density of states (LDOS) analysis suggests that interaction between Fe (Pt) and Ag near Fe/Ag (Pt/Ag) interface leads to spin symmetry breaking of the Ag atom and hence induces magnetism magnitude. In contrast, the magnetic moments of interfacial Fe and Pt atoms reduce because of the increase in the electronic states near the Fermi level of the minority-spin electrons. In addition, the significant enhancements of the LDOS near the Fermi levels of the minority-spin electrons signify the boosting of the transport properties of the minority-spin electrons and hence the spin-dependent electron transport at this ferromagnet/metal interface. From this work, it is expected that this clarification of the interfacial magnetism may inspire new innovation on how to improve spin-dependent electron transport for enhancing the giant magnetoresistance (GMR) ratio of potential GMR-based spintronic devices.

DFT calculations of strain and interface effects on electronic structures and magnetic properties of L10-FePt/Ag heterojunction of GMR applications

Directory of Open Access Journals (Sweden)

Sittichain Pramchu

2018-03-01

Full Text Available In this work, density functional theory (DFT was employed to investigate the effect of strain and interface on electronic structures and magnetic properties of L10-FePt/Ag heterojunction. Two possible interface structures of L10-FePt(001/Ag(001, that is, interface between Fe and Ag layers (Fe/Ag and between Pt and Ag layers (Pt/Ag, were inspected. It was found that Pt/Ag interface is more stable than Fe/Ag interface due to its lower formation energy. Further, under the lattice mismatch induced tensile strain, the enhancement of magnetism for both Fe/Ag and Pt/Ag interface structures has been found to have progressed, though the magnetic moments of “interfacial” Fe and Pt atoms have been found to have decreased. To explain this further, the local density of states (LDOS analysis suggests that interaction between Fe (Pt and Ag near Fe/Ag (Pt/Ag interface leads to spin symmetry breaking of the Ag atom and hence induces magnetism magnitude. In contrast, the magnetic moments of interfacial Fe and Pt atoms reduce because of the increase in the electronic states near the Fermi level of the minority-spin electrons. In addition, the significant enhancements of the LDOS near the Fermi levels of the minority-spin electrons signify the boosting of the transport properties of the minority-spin electrons and hence the spin-dependent electron transport at this ferromagnet/metal interface. From this work, it is expected that this clarification of the interfacial magnetism may inspire new innovation on how to improve spin-dependent electron transport for enhancing the giant magnetoresistance (GMR ratio of potential GMR-based spintronic devices.

Study of solute segregation at interfaces using Auger electron spectroscopy

International Nuclear Information System (INIS)

White, C.L.

1984-01-01

Interfacial segregation, often confined to within a few atomic distances of the interface, can strongly influence the processing and properties of metals and ceramics. The thinness of such solute-enriched regions can cause them to be particularly suitable for study using surface sensitive microanalytical techniques such as Auger electron spectroscopy (AES). The application of AES to studies of interfacial segregation in metals and ceramics is briefly reviewed, and several examples are presented. 43 references, 14 figures

CAMAC to GPIB interface

International Nuclear Information System (INIS)

Naivar, F.J.

1978-01-01

A CAMAC module developed at the Los Alamos Scientific Laboratory allows any device conforming to the GPIB standard to be connected to a CAMAC system. This module incorporates a microprocessor to control up to 14 GPIB-compatible instruments using a restricted set of CAMAC F-N-A commands. The marriage of a device-independent bus (IEEE Standard 488-1975) to a computer-independent bus (IEEE Standard 583-1975) provides a general method for interfacing a system of programmable instruments to any computer. This module is being used to interface a variety of interactive devices on a control console to a control computer

Design and Fabrication of Cryostat Interface and Electronics for High Performance Antimatter Trap (HI-PAT)

Science.gov (United States)

Smith, Gerald A.

1999-01-01

Included in Appendix I to this report is a complete set of design and assembly schematics for the high vacuum inner trap assembly, cryostat interfaces and electronic components for the MSFC HI-PAT. Also included in the final report are summaries of vacuum tests, and electronic tests performed upon completion of the assembly.

Density functional theory based study of chlorine doped WS2-metal interface

International Nuclear Information System (INIS)

Chanana, Anuja; Mahapatra, Santanu

2016-01-01

Investigation of a transition metal dichalcogenide (TMD)-metal interface is essential for the effective functioning of monolayer TMD based field effect transistors. In this work, we employ the Density Functional Theory calculations to analyze the modulation of the electronic structure of monolayer WS 2 with chlorine doping and the relative changes in the contact properties when interfaced with gold and palladium. We initially examine the atomic and electronic structures of pure and doped monolayer WS 2 supercell and explore the formation of midgap states with band splitting near the conduction band edge. Further, we analyze the contact nature of the pure supercell with Au and Pd. We find that while Au is physiosorbed and forms n-type contact, Pd is chemisorped and forms p-type contact with a higher valence electron density. Next, we study the interface formed between the Cl-doped supercell and metals and observe a reduction in the Schottky barrier height (SBH) in comparison to the pure supercell. This reduction found is higher for Pd in comparison to Au, which is further validated by examining the charge transfer occurring at the interface. Our study confirms that Cl doping is an efficient mechanism to reduce the n-SBH for both Au and Pd, which form different types of contact with WS 2 .

Modulation transfer function and detective quantum efficiency of electron bombarded charge coupled device detector for low energy electrons

Czech Academy of Sciences Publication Activity Database

Horáček, Miroslav

2005-01-01

Roč. 76, č. 9 (2005), 093704:1-6 ISSN 0034-6748 R&D Projects: GA ČR(CZ) GA202/03/1575 Keywords : electron bombarded CCD * modulation transfer function * detective quantum efficiency Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.235, year: 2005

Controllable Schottky barrier in GaSe/graphene heterostructure: the role of interface dipole

Science.gov (United States)

Si, Chen; Lin, Zuzhang; Zhou, Jian; Sun, Zhimei

2017-03-01

The discoveries of graphene and other related two-dimensional crystals have recently led to a new technology: van der Waals (vdW) heterostructures based on these atomically thin materials. Such a paradigm has been proved promising for a wide range of applications from nanoelectronics to optoelectronics and spintronics. Here, using first-principles calculations, we investigate the electronic structure and interface characteristics of a newly synthesized GaSe/graphene (GaSe/g) vdW heterostructure. We show that the intrinsic electronic properties of GaSe and graphene are both well preserved in the heterostructure, with a Schottky barrier formed at the GaSe/g interface. More interestingly, the band alignment between graphene and GaSe can be effectively modulated by tuning the interfacial distance or applying an external electric filed. This makes the Schottky barrier height (SBH) controllable, which is highly desirable in the electronic and optoelectronic devices based on vdW heterostructures. In particular, the tunability of the interface dipole and potential step is further uncovered to be the underlying mechanism that ensures this controllable tuning of SBH.

Electronic relaxation of deep bulk trap and interface state in ZnO ceramics

International Nuclear Information System (INIS)

Yang Yan; Li Sheng-Tao; Ding Can; Cheng Peng-Fei

2011-01-01

This paper investigates the electronic relaxation of deep bulk trap and interface state in ZnO ceramics based on dielectric spectra measured in a wide range of temperature, frequency and bias, in addition to the steady state response. It discusses the nature of net current flowing over the barrier affected by interface state, and then obtains temperature-dependent barrier height by approximate calculation from steady I—V (current—voltage) characteristics. Additional conductance and capacitance arising from deep bulk trap relaxation are calculated based on the displacement of the cross point between deep bulk trap and Fermi level under small AC signal. From the resonances due to deep bulk trap relaxation on dielectric spectra, the activation energies are obtained as 0.22 eV and 0.35 eV, which are consistent with the electronic levels of the main defect interstitial Zn and vacancy oxygen in the depletion layer. Under moderate bias, another resonance due to interface relaxation is shown on the dielectric spectra. The DC-like conductance is also observed in high temperature region on dielectric spectra, and the activation energy is much smaller than the barrier height in steady state condition, which is attributed to the displacement current coming from the shallow bulk trap relaxation or other factors. (fluids, plasmas and electric discharges)

Solid-state pulse modulator using Marx generator for a medical linac electron-gun

Science.gov (United States)

Lim, Heuijin; Hyeok Jeong, Dong; Lee, Manwoo; Lee, Mujin; Yi, Jungyu; Yang, Kwangmo; Ro, Sung Chae

2016-04-01

A medical linac is used for the cancer treatment and consists of an accelerating column, waveguide components, a magnetron, an electron-gun, a pulse modulator, and an irradiation system. The pulse modulator based on hydrogen thyratron-switched pulse-forming network is commonly used in linac. As the improvement of the high power semiconductors in switching speed, voltage rating, and current rating, an insulated gate bipolar transistor has become the more popular device used for pulsed power systems. We propose a solid-state pulse modulator to generator high voltage by multi-stacked storage-switch stages based on the Marx generator. The advantage of our modulator comes from the use of two semiconductors to control charging and discharging of the storage capacitor at each stage and it allows to generate the pulse with various amplitudes, widths, and shapes. In addition, a gate driver for two semiconductors is designed to reduce the control channels and to protect the circuits. It is developed for providing the pulsed power to a medical linac electron-gun that requires 25 kV and 1 A as the first application. In order to improve the power efficiency and achieve the compactness modulator, a capacitor charging power supply, a Marx pulse generator, and an electron-gun heater isolated transformer are constructed and integrated. This technology is also being developed to extend the high power pulsed system with > 1 MW and also other applications such as a plasma immersed ion implantation and a micro pulse electrostatic precipitator which especially require variable pulse shape and high repetition rate > 1 kHz. The paper describes the design features and the construction of this solid-state pulse modulator. Also shown are the performance results into the linac electron-gun.

Solid-state pulse modulator using Marx generator for a medical linac electron-gun

International Nuclear Information System (INIS)

Lim, Heuijin; Jeong, Dong Hyeok; Lee, Manwoo; Lee, Mujin; Yi, Jungyu; Yang, Kwangmo; Ro, Sung Chae

2016-01-01

A medical linac is used for the cancer treatment and consists of an accelerating column, waveguide components, a magnetron, an electron-gun, a pulse modulator, and an irradiation system. The pulse modulator based on hydrogen thyratron-switched pulse-forming network is commonly used in linac. As the improvement of the high power semiconductors in switching speed, voltage rating, and current rating, an insulated gate bipolar transistor has become the more popular device used for pulsed power systems. We propose a solid-state pulse modulator to generator high voltage by multi-stacked storage-switch stages based on the Marx generator. The advantage of our modulator comes from the use of two semiconductors to control charging and discharging of the storage capacitor at each stage and it allows to generate the pulse with various amplitudes, widths, and shapes. In addition, a gate driver for two semiconductors is designed to reduce the control channels and to protect the circuits. It is developed for providing the pulsed power to a medical linac electron-gun that requires 25 kV and 1 A as the first application. In order to improve the power efficiency and achieve the compactness modulator, a capacitor charging power supply, a Marx pulse generator, and an electron-gun heater isolated transformer are constructed and integrated. This technology is also being developed to extend the high power pulsed system with > 1 MW and also other applications such as a plasma immersed ion implantation and a micro pulse electrostatic precipitator which especially require variable pulse shape and high repetition rate > 1 kHz. The paper describes the design features and the construction of this solid-state pulse modulator. Also shown are the performance results into the linac electron-gun

Performances of the ATLAS Hadronic Tile Calorimeter Modules for Electrons and Pions

CERN Document Server

Kulchitskii, Yu A

2004-01-01

With the aim of establishing of an electromagnetic energy scale of the ATLAS Tile calorimeter and understanding of performance of the calorimeter to electrons 12 \\% of modules have been exposed in electron beams with various energies by three possible ways: cell-scan at $\\theta =20^o$ at the centers of the front face cells, $\\eta$-scan and tilerow scan at $\\theta = 90^o$ for the module side cells. We have extracted the electron calibration constants and electron energy resolutions some of these barrel and extended barrel modules at energies E = 10, 20, 50, 100 and 180 GeV for the cell-scan at $\\theta = 20^o$, the $\\eta$ scan and the tile scan at $90^o$. The average values of these constants are equal to $\\langle R_e \\rangle =1.157\\pm0.002$ pC/GeV for the cell-scan at $\\theta = 20^o$, $\\langle R_e \\rangle =1.143\\pm0.005$ pC/GeV for the $\\eta$-scan and $\\langle R_e\\rangle =1.196\\pm0.005$ pC/GeV for the tile-scan at $\\theta = 90^o$. The RMS values are the following: for the cell-scan is $RMS=2.6\\pm0.1$ \\%, for t...

Breast-conserving radiation therapy using combined electron and intensity-modulated radiotherapy technique

International Nuclear Information System (INIS)

Li, J.G.; Williams, S.S.; Goffinet, D.R.; Boer, A.L.; Xing, L.

2000-01-01

An electron beam with appropriate energy was combined with four intensity modulated photon beams. The direction of the electron beam was chosen to be tilted 10-20 laterally from the anteroposterior direction. Two of the intensity-modulated photon beams had the same gantry angles as the conventional tangential fields, whereas the other two beams were rotated 15-25' toward the anteroposterior directions from the first two photon beams. An iterative algorithm was developed which optimizes the weight of the electron beam as well as the fluence profiles of the photon beams for a given patient. Two breast cancer patients with early-stage breast tumors were planned with the new technique and the results were compared with those from 3D planning using tangential fields as well as 9-field intensity-modulated radiotherapy (IMRT) techniques. The combined electron and IMRT plans showed better dose conformity to the target with significantly reduced dose to the ipsilateral lung and, in the case of the left-breast patient, reduced dose to the heart, than the tangential field plans. In both the right-sided and left-sided breast plans, the dose to other normal structures was similar to that from conventional plans and was much smaller than that from the 9-field IMRT plans. The optimized electron beam provided between 70 to 80% of the prescribed dose at the depth of maximum dose of the electron beam. The combined electron and IMRT technique showed improvement over the conventional treatment technique using tangential fields with reduced dose to the ipsilateral lung and the heart. The customized beam directions of the four IMRT fields also kept the dose to other critical structures to a minimum. (author)

Tail state-assisted charge injection and recombination at the electron-collecting interface of P3HT:PCBM bulk-heterojunction polymer solar cells

Energy Technology Data Exchange (ETDEWEB)

Wang, He [Department of Chemical and Biological Engineering, Princeton University, Princeton, NJ 08544 (United States); Department of Electrical Engineering, Princeton University, Princeton, NJ 08544 (United States); Shah, Manas [Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Ganesan, Venkat [Department of Chemical Engineering, University of Texas at Austin, Austin, TX 78712 (United States); Chabinyc, Michael L. [Materials Department, University of California Santa Barbara, CA 93106 (United States); Loo, Yueh-Lin [Department of Chemical and Biological Engineering, Princeton University, Princeton, NJ 08544 (United States)

2012-12-15

The systematic insertion of thin films of P3HT and PCBM at the electron- and hole-collecting interfaces, respectively, in bulk-heterojunction polymer solar cells results in different extents of reduction in device characteristics, with the insertion of P3HT at the electron-collecting interface being less disruptive to the output currents compared to the insertion of PCBM at the hole-collecting interface. This asymmetry is attributed to differences in the tail state-assisted charge injection and recombination at the active layer-electrode interfaces. P3HT exhibits a higher density of tail states compared to PCBM; holes in these tail states can thus easily recombine with electrons at the electron-collection interface during device operation. This process is subsequently compensated by the injection of holes from the cathode into these tail states, which collectively enables net current flow through the polymer solar cell. The study presented herein thus provides a plausible explanation for why preferential segregation of P3HT to the cathode interface is inconsequential to device characteristics in P3HT:PCBM bulk-heterojunction solar cells. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Interface States in AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors

International Nuclear Information System (INIS)

Feng Qian; Du Kai; Li Yu-Kun; Shi Peng; Feng Qing

2013-01-01

Frequency-dependent capacitance and conductance measurements are performed on AlGaN/GaN high electron mobility transistors (HEMTs) and NbAlO/AlGaN/GaN metal-insulator-semiconductor HEMTs (MISHEMTs) to extract density and time constants of the trap states at NbAlO/AlGaN interface and gate/AlGaN interface with the gate-voltage biased into the accumulation region and that at the AlGaN/GaN interface with the gate-voltage biased into the depletion region in different circuit models. The measurement results indicate that the trap density at NbAlO/AlGaN interface is about one order lower than that at gate/AlGaN interface while the trap density at AlGaN/GaN interface is in the same order, so the NbAlO film can passivate the AlGaN surface effectively, which is consistent with the current collapse results

Study and Handling Methods of Power IGBT Module Failures in Power Electronic Converter Systems

DEFF Research Database (Denmark)

Choi, Uimin; Blaabjerg, Frede; Lee, Kyo-Beum

2015-01-01

Power electronics plays an important role in a wide range of applications in order to achieve high efficiency and performance. Increasing efforts are being made to improve the reliability of power electronics systems to ensure compliance with more stringent constraints on cost, safety......, and availability in different applications. This paper presents an overview of the major failure mechanisms of IGBT modules and their handling methods in power converter systems improving reliability. The major failure mechanisms of IGBT modules are presented first, and methods for predicting lifetime...... and estimating the junction temperature of IGBT modules are then discussed. Subsequently, different methods for detecting open- and short-circuit faults are presented. Finally, fault-tolerant strategies for improving the reliability of power electronic systems under field operation are explained and compared...

Modeling of the atomic and electronic structures of interfaces

International Nuclear Information System (INIS)

Sutton, A.P.

1988-01-01

Recent tight binding and Car-Parrinello simulations of grain boundaries in semiconductors are reviewed. A critique is given of some models of embrittlement that are based on electronic structure considerations. The structural unit model of grain boundary structure is critically assessed using some results for mixed tilt and twist grain boundaries. A new method of characterizing interfacial structure in terms of bond angle distribution functions is described. A new formulation of thermodynamic properties of interfaces is presented which focusses on the local atomic environment. Effective, temperature dependent N-body atomic interactions are derived for studying grain boundary structure at elevated temperature

Electronic transitions and band offsets in C60:SubPc and C60:MgPc on MoO3 studied by modulated surface photovoltage spectroscopy

International Nuclear Information System (INIS)

Fengler, S.; Dittrich, Th.; Rusu, M.

2015-01-01

Electronic transitions at interfaces between MoO 3 layers and organic layers of C 60 , SubPc, MgPc, and nano-composite layers of SubPc:C 60 and MgPc:C 60 have been studied by modulated surface photovoltage (SPV) spectroscopy. For all systems, time dependent and modulated SPV signals pointed to dissociation of excitons at the MoO 3 /organic layer interfaces with a separation of holes towards MoO 3 . The highest occupied molecular orbital (HOMO)-lowest unoccupied molecular orbital (LUMO) gaps (E HL ) of C 60 , SubPc, and MgPc and the effective E HL of SubPc:C 60 and MgPc:C 60 were measured. The offsets between the LUMO (ΔE L ) or HOMO (ΔE H ) bands were obtained with high precision and amounted to 0.33 or 0.73 eV for SubPc:C 60 , respectively, and to −0.33 or 0.67 eV for MgPc:C 60 , respectively. Exponential tails below E HL and most pronounced sub-bandgap transitions were characterized and ascribed to disorder and transitions from HOMO bands to unoccupied defect states

Electron scattering at interfaces in nano-scale vertical interconnects: A combined experimental and ab initio study

Science.gov (United States)

Lanzillo, Nicholas A.; Restrepo, Oscar D.; Bhosale, Prasad S.; Cruz-Silva, Eduardo; Yang, Chih-Chao; Youp Kim, Byoung; Spooner, Terry; Standaert, Theodorus; Child, Craig; Bonilla, Griselda; Murali, Kota V. R. M.

2018-04-01

We present a combined theoretical and experimental study on the electron transport characteristics across several representative interface structures found in back-end-of-line interconnect stacks for advanced semiconductor manufacturing: Cu/Ta(N)/Co/Cu and Cu/Ta(N)/Ru/Cu. In particular, we evaluate the impact of replacing a thin TaN barrier with Ta while considering both Co and Ru as wetting layers. Both theory and experiment indicate a pronounced reduction in vertical resistance when replacing TaN with Ta, regardless of whether a Co or Ru wetting layer is used. This indicates that a significant portion of the total vertical resistance is determined by electron scattering at the Cu/Ta(N) interface. The electronic structure of these nano-sized interconnects is analyzed in terms of the atom-resolved projected density of states and k-resolved transmission spectra at the Fermi level. This work further develops a fundamental understanding of electron transport and material characteristics in nano-sized interconnects.

Investigation of surface charge density on solid–liquid interfaces by modulating the electrical double layer

International Nuclear Information System (INIS)

Moon, Jong Kyun; Song, Myung Won; Pak, Hyuk Kyu

2015-01-01

A solid surface in contact with water or aqueous solution usually carries specific electric charges. These surface charges attract counter ions from the liquid side. Since the geometry of opposite charge distribution parallel to the solid–liquid interface is similar to that of a capacitor, it is called an electrical double layer capacitor (EDLC). Therefore, there is an electrical potential difference across an EDLC in equilibrium. When a liquid bridge is formed between two conducting plates, the system behaves as two serially connected EDLCs. In this work, we propose a new method for investigating the surface charge density on solid–liquid interfaces. By mechanically modulating the electrical double layers and simultaneously applying a dc bias voltage across the plates, an ac electric current can be generated. By measuring the voltage drop across a load resistor as a function of bias voltage, we can study the surface charge density on solid–liquid interfaces. Our experimental results agree very well with the simple equivalent electrical circuit model proposed here. Furthermore, using this method, one can determine the polarity of the adsorbed state on the solid surface depending on the material used. We expect this method to aid in the study of electrical phenomena on solid–liquid interfaces. (paper)

Materials and optimized designs for human-machine interfaces via epidermal electronics.

Science.gov (United States)

Jeong, Jae-Woong; Yeo, Woon-Hong; Akhtar, Aadeel; Norton, James J S; Kwack, Young-Jin; Li, Shuo; Jung, Sung-Young; Su, Yewang; Lee, Woosik; Xia, Jing; Cheng, Huanyu; Huang, Yonggang; Choi, Woon-Seop; Bretl, Timothy; Rogers, John A

2013-12-17

Thin, soft, and elastic electronics with physical properties well matched to the epidermis can be conformally and robustly integrated with the skin. Materials and optimized designs for such devices are presented for surface electromyography (sEMG). The findings enable sEMG from wide ranging areas of the body. The measurements have quality sufficient for advanced forms of human-machine interface. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Application of a generalized interface module to the coupling of PARCS with both RELAPS and TRAC-M

International Nuclear Information System (INIS)

Barber, D.A.; Wang, W.; Miller, R.M.; Downar, T.J.; Joo, H.G.; Mousseau, V.A.; Ebert, D.E.

1999-01-01

In an effort to more easily assess various combinations of 3-D neutronic/thermal-hydraulic codes, the USNRC has sponsored the development of a generalized interface module for the coupling of any thermal-hydraulics code to any spatial kinetics code. In this design, the thermal-hydraulics, general interface, and spatial kinetics codes function independently and utilize the Parallel Virtual Machine (PVM) software to manage inter-process communication. Using this interface, the USNRC version of the 3D neutron kinetics code, PARCS, has been coupled to the USNRC system analysis codes RELAP5 and TRAC-M. RELAP5/PARCS assessment results are presented for an OECD/NEA main steam line break benchmark problem. The assessment of TRAC-M/PARCS has only recently been initiated; nonetheless, the capabilities of the coupled code are presented for the OECD/NEA main steam line break benchmark problem

Electronic and interface state density properties of Cu/n-Si MIS-type diode

Energy Technology Data Exchange (ETDEWEB)

Yakuphanoglu, Fahrettin [Physics Department, Firat University, Elazig 23169 (Turkey)]. E-mail: fyhanoglu@firat.edu.tr

2007-05-01

Electronic and interface-state density properties of the Cu/n-Si diode were investigated by current-voltage and capacitance-voltage (C-V) analyses. The electronic parameters such as barrier height, ideality factor and series resistance of the diode were determined by performing different plots. The barrier height, ideality factor and series resistance values of the diode were found to be 0.69 eV, 5.31 and 7.63 k{omega}, respectively. The obtained ideality factor confirms that the Cu/n-Si device has a metal-insulator-semiconductor (MIS) configuration. The conductance mechanism of the Cu/n-Si diode is in agreement with typical of hopping conduction in polycrystalline and amorphous materials. The interface state density of the diode was found to vary from 1.45x10{sup 13} (eV{sup -1} cm{sup 2}) at E {sub C}-0.45 eV to 0.88x10{sup 13} (eV{sup -1} cm{sup 2}) at E {sub C}-0.66 eV.

Imaging nanoscale spatial modulation of a relativistic electron beam with a MeV ultrafast electron microscope

Science.gov (United States)

Lu, Chao; Jiang, Tao; Liu, Shengguang; Wang, Rui; Zhao, Lingrong; Zhu, Pengfei; Liu, Yaqi; Xu, Jun; Yu, Dapeng; Wan, Weishi; Zhu, Yimei; Xiang, Dao; Zhang, Jie

2018-03-01

An accelerator-based MeV ultrafast electron microscope (MUEM) has been proposed as a promising tool to the study structural dynamics at the nanometer spatial scale and the picosecond temporal scale. Here, we report experimental tests of a prototype MUEM where high quality images with nanoscale fine structures were recorded with a pulsed ˜3 MeV picosecond electron beam. The temporal and spatial resolutions of the MUEM operating in the single-shot mode are about 4 ps (FWHM) and 100 nm (FWHM), corresponding to a temporal-spatial resolution of 4 × 10-19 s m, about 2 orders of magnitude higher than that achieved with state-of-the-art single-shot keV UEM. Using this instrument, we offer the demonstration of visualizing the nanoscale periodic spatial modulation of an electron beam, which may be converted into longitudinal density modulation through emittance exchange to enable production of high-power coherent radiation at short wavelengths. Our results mark a great step towards single-shot nanometer-resolution MUEMs and compact intense x-ray sources that may have widespread applications in many areas of science.

Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface

DEFF Research Database (Denmark)

Andresen, S.E.; Sørensen, B.S.; Lindelof, P.E.

2003-01-01

Spin-polarized electron coupling across a Si delta-doped GaMnAs/n-GaAs interface was investigated. The injection of spin-polarized electrons was detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode. The angular momentum selection rules were simplified...

Energy modulation of nonrelativistic electrons in an optical near field on a metal microslit

Science.gov (United States)

Ishikawa, R.; Bae, J.; Mizuno, K.

2001-04-01

Energy modulation of nonrelativistic electrons with a laser beam using a metal microslit as an interaction circuit has been investigated. An optical near field is induced in the proximity of the microslit by illumination of the laser beam. The electrons passing close to the slit are accelerated or decelerated by an evanescent wave contained in the near field whose phase velocity is equal to the velocity of the electrons. The electron-evanescent wave interaction in the microslit has been analyzed theoretically and experimentally. The theory has predicted that electron energy can be modulated at optical frequencies. Experiments performed in the infrared region have verified theoretical predictions. The electron-energy changes of more than ±5 eV with a 10 kW CO2 laser pulse at the wavelength of 10.6 μm has been successfully observed for an electron beam with an energy of less than 80 keV.

Electronic band-gap modified passive silicon optical modulator at telecommunications wavelengths.

Science.gov (United States)

Zhang, Rui; Yu, Haohai; Zhang, Huaijin; Liu, Xiangdong; Lu, Qingming; Wang, Jiyang

2015-11-13

The silicon optical modulator is considered to be the workhorse of a revolution in communications. In recent years, the capabilities of externally driven active silicon optical modulators have dramatically improved. Self-driven passive modulators, especially passive silicon modulators, possess advantages in compactness, integration, low-cost, etc. Constrained by a large indirect band-gap and sensitivity-related loss, the passive silicon optical modulator is scarce and has been not advancing, especially at telecommunications wavelengths. Here, a passive silicon optical modulator is fabricated by introducing an impurity band in the electronic band-gap, and its nonlinear optics and applications in the telecommunications-wavelength lasers are investigated. The saturable absorption properties at the wavelength of 1.55 μm was measured and indicates that the sample is quite sensitive to light intensity and has negligible absorption loss. With a passive silicon modulator, pulsed lasers were constructed at wavelengths at 1.34 and 1.42 μm. It is concluded that the sensitive self-driven passive silicon optical modulator is a viable candidate for photonics applications out to 2.5 μm.

Structural and electronic properties of graphene–ZnO interfaces: dispersion-corrected density functional theory investigations

International Nuclear Information System (INIS)

Xu Pengtao; Tang Qing; Zhou Zhen

2013-01-01

Detailed first-principles computations were performed on the geometric and electronic properties of the interfaces between graphene and ZnO polar surfaces. A notable van der Waals force exists at the interface, and charge transfer occurs between graphene and ZnO as a result of the difference in their work functions. The Dirac point of graphene remains intact despite its adsorption on ZnO, implying that its interaction with ZnO does not affect the superior conductivity of graphene. Excited electrons within the energy range of 0–3 eV (versus Fermi energy) in the hybrid systems are mainly accumulated on graphene. The computations provide a theoretical explanation for the good performance of graphene/ZnO hybrid materials in photocatalysts and solar cells. (paper)

Mode-selective vibrational modulation of charge transport in organic electronic devices

KAUST Repository

Bakulin, Artem A.

2015-08-06

The soft character of organic materials leads to strong coupling between molecular, nuclear and electronic dynamics. This coupling opens the way to influence charge transport in organic electronic devices by exciting molecular vibrational motions. However, despite encouraging theoretical predictions, experimental realization of such approach has remained elusive. Here we demonstrate experimentally that photoconductivity in a model organic optoelectronic device can be modulated by the selective excitation of molecular vibrations. Using an ultrafast infrared laser source to create a coherent superposition of vibrational motions in a pentacene/C60 photoresistor, we observe that excitation of certain modes in the 1,500–1,700 cm−1 region leads to photocurrent enhancement. Excited vibrations affect predominantly trapped carriers. The effect depends on the nature of the vibration and its mode-specific character can be well described by the vibrational modulation of intermolecular electronic couplings. This presents a new tool for studying electron–phonon coupling and charge dynamics in (bio)molecular materials.

Mode-selective vibrational modulation of charge transport in organic electronic devices

KAUST Repository

Bakulin, Artem A.; Lovrincic, Robert; Yu, Xi; Selig, Oleg; Bakker, Huib J.; Rezus, Yves L. A.; Nayak, Pabitra K.; Fonari, Alexandr; Coropceanu, Veaceslav; Bredas, Jean-Luc; Cahen, David

2015-01-01

The soft character of organic materials leads to strong coupling between molecular, nuclear and electronic dynamics. This coupling opens the way to influence charge transport in organic electronic devices by exciting molecular vibrational motions. However, despite encouraging theoretical predictions, experimental realization of such approach has remained elusive. Here we demonstrate experimentally that photoconductivity in a model organic optoelectronic device can be modulated by the selective excitation of molecular vibrations. Using an ultrafast infrared laser source to create a coherent superposition of vibrational motions in a pentacene/C60 photoresistor, we observe that excitation of certain modes in the 1,500–1,700 cm−1 region leads to photocurrent enhancement. Excited vibrations affect predominantly trapped carriers. The effect depends on the nature of the vibration and its mode-specific character can be well described by the vibrational modulation of intermolecular electronic couplings. This presents a new tool for studying electron–phonon coupling and charge dynamics in (bio)molecular materials.

Electronic structure of the indium tin oxide/nanocrystalline anatase (TiO2)/ruthenium-dye interfaces in dye-sensitized solar cells

Science.gov (United States)

Lyon, J. E.; Rayan, M. K.; Beerbom, M. M.; Schlaf, R.

2008-10-01

The electronic structure of two interfaces commonly found in dye-sensitized photovoltaic cells based on nanocrystalline anatase TiO2 ("Grätzel cells") was investigated using photoemission spectroscopy (PES). X-ray photoemission spectroscopy (XPS) and ultraviolet photoemission spectroscopy (UPS) measurements were carried out on the indium tin oxide (ITO)/TiO2 and the TiO2/cis-bis(isothiocyanato)bis(2,2'-bipyridyl-4,4'-dicarboxylato)-ruthenium(II)bis-tetrabutylammonium dye ("N719" or "Ruthenium 535-bisTBA") interfaces. Both contacts were investigated using a multistep deposition procedure where the entire structure was prepared in vacuum using electrospray deposition. In between deposition steps the surface was characterized with XPS and UPS resulting in a series of spectra, allowing the determination of the orbital and band lineup at the interfaces. The results of these efforts confirm previous PES measurements on TiO2/dye contacts prepared under ambient conditions, suggesting that ambient contamination might not have significant influence on the electronic structure at the dye/TiO2 interface. The results also demonstrate that there may be a significant barrier for electron injection at the sputtered ITO/TiO2 interface and that this interface should be viewed as a semiconductor heterojunction rather than as metal-semiconductor (Schottky) contact.

Aberration-corrected transmission electron microscopy analyses of GaAs/Si interfaces in wafer-bonded multi-junction solar cells

Energy Technology Data Exchange (ETDEWEB)

Häussler, Dietrich [Institute for Materials Science, Christian-Albrechts-University Kiel, Kaiserstraße 2, 24143 Kiel (Germany); Houben, Lothar [Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Research Centre Juelich GmbH, 52425 Juelich (Germany); Essig, Stephanie [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, 79110 Freiburg (Germany); Kurttepeli, Mert [Institute for Materials Science, Christian-Albrechts-University Kiel, Kaiserstraße 2, 24143 Kiel (Germany); Dimroth, Frank [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, 79110 Freiburg (Germany); Dunin-Borkowski, Rafal E. [Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Research Centre Juelich GmbH, 52425 Juelich (Germany); Jäger, Wolfgang, E-mail: wolfgang.jaeger@tf.uni-kiel.de [Institute for Materials Science, Christian-Albrechts-University Kiel, Kaiserstraße 2, 24143 Kiel (Germany)

2013-11-15

Aberration-corrected scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) investigations have been applied to investigate the structure and composition fluctuations near interfaces in wafer-bonded multi-junction solar cells. Multi-junction solar cells are of particular interest since efficiencies well above 40% have been obtained for concentrator solar cells which are based on III-V compound semiconductors. In this methodologically oriented investigation, we explore the potential of combining aberration-corrected high-angle annular dark-field STEM imaging (HAADF-STEM) with spectroscopic techniques, such as EELS and energy-dispersive X-ray spectroscopy (EDXS), and with high-resolution transmission electron microscopy (HR-TEM), in order to analyze the effects of fast atom beam (FAB) and ion beam bombardment (IB) activation treatments on the structure and composition of bonding interfaces of wafer-bonded solar cells on Si substrates. Investigations using STEM/EELS are able to measure quantitatively and with high precision the widths and the fluctuations in element distributions within amorphous interface layers of nanometer extensions, including those of light elements. Such measurements allow the control of the activation treatments and thus support assessing electrical conductivity phenomena connected with impurity and dopant distributions near interfaces for optimized performance of the solar cells. - Highlights: • Aberration-corrected TEM and EELS reveal structural and elemental profiles across GaAs/Si bond interfaces in wafer-bonded GaInP/GaAs/Si - multi-junction solar cells. • Fluctuations in elemental concentration in nanometer-thick amorphous interface layers, including the disrubutions of light elements, are measured using EELS. • The projected widths of the interface layers are determined on the atomic scale from STEM-HAADF measurements. • The effects of atom and ion beam activation treatment on the bonding

Experimental investigation of electronic and magnetic properties of LaAlO{sub 3}-SrTiO{sub 3} interfaces

Energy Technology Data Exchange (ETDEWEB)

Richter, Christoph

2013-02-08

This thesis is an experimental study of the interface between LaAlO{sub 3} (LAO) and SrTiO{sub 3} (STO). Both materials are non-magnetic insulators. LAO-STO interfaces, however, can be conducting, and even superconducting at millikelvin temperatures. Moreover, using cantilever-based torque magnetometry we have found a ferromagnetic-like ordering at such interfaces that coexists with the superconductivity. To gain insight into the underlying electronic structure I have developed and built solid-state planar tunnel devices with LAO-STO interfaces as one tunneling electrode. Using these devices the electronic density of states (DOS) of normal- and superconducting LAO-STO interfaces was mapped with tunneling spectroscopy. Since the charge carrier density at LAO-STO interfaces is highly tunable with electrostatic gating, the spectral DOS of the 2D-superconductor could be explored across a wide T,n-phase diagram. The main result bears a striking resemblance to the pseudogap-phase of high-temperature cuprate superconductors. The appendix reports on possible technical applications of LAO-STO interfaces in field-effect transistors and integrated circuits. Furthermore, it contains extensive experimental results concerning alternative growth procedures and related material systems. The LAO-STO interface is established as a representative of a broader class of conducting oxide interfaces. In particular, a conducting oxide interface without SrTiO{sub 3}, the LaAlO{sub 3}-CaTiO{sub 3} interface, is investigated.

Transmission electron microscopy investigation of interfaces in a two-phase TiAl alloy

Science.gov (United States)

Mahon, G. J.; Howe, J. M.

1990-06-01

The atomic structures of the γ/α2 and γ/γT interfaces in a TiAl alloy were investigated using conventional and high-resolution transmission electron microscopy (TEM) in order to understand the growth mechanisms and deformation behavior of the two-phase alloy. The results show that the α2 plates grow from the γ phase by the migration of a/6 partial dislocation ledges across the faces and that the γ/α2 interface usually contains closely spaced arrays of interfacial dislocations. Deformation twins cut through both γ twin boundaries and α2 plates during deformation, although slip of twinning c slocations through α2 appears to be a difficult process. Both the γ/α2 and γ/γT interfaces can be imaged and modeled at the atomic level, although slight crystal and/or beam tilt can complicate image interpretation.

Orientation-modulated attention effect on visual evoked potential: Application for PIN system using brain-computer interface.

Science.gov (United States)

Wilaiprasitporn, Theerawit; Yagi, Tohru

2015-01-01

This research demonstrates the orientation-modulated attention effect on visual evoked potential. We combined this finding with our previous findings about the motion-modulated attention effect and used the result to develop novel visual stimuli for a personal identification number (PIN) application based on a brain-computer interface (BCI) framework. An electroencephalography amplifier with a single electrode channel was sufficient for our application. A computationally inexpensive algorithm and small datasets were used in processing. Seven healthy volunteers participated in experiments to measure offline performance. Mean accuracy was 83.3% at 13.9 bits/min. Encouraged by these results, we plan to continue developing the BCI-based personal identification application toward real-time systems.

Metal/dielectric thermal interfacial transport considering cross-interface electron-phonon coupling: Theory, two-temperature molecular dynamics, and thermal circuit

Science.gov (United States)

Lu, Zexi; Wang, Yan; Ruan, Xiulin

2016-02-01

The standard two-temperature equations for electron-phonon coupled thermal transport across metal/nonmetal interfaces are modified to include the possible coupling between metal electrons with substrate phonons. The previous two-temperature molecular dynamics (TT-MD) approach is then extended to solve these equations numerically at the atomic scale, and the method is demonstrated using Cu/Si interface as an example. A key parameter in TT-MD is the nonlocal coupling distance of metal electrons and nonmetal phonons, and here we use two different approximations. The first is based on Overhauser's "joint-modes" concept, while we use an interfacial reconstruction region as the length scale of joint region rather than the phonon mean-free path as in Overhauser's original model. In this region, the metal electrons can couple to the joint phonon modes. The second approximation is the "phonon wavelength" concept where electrons couple to phonons nonlocally within the range of one phonon wavelength. Compared with the original TT-MD, including the cross-interface electron-phonon coupling can slightly reduce the total thermal boundary resistance. Whether the electron-phonon coupling within the metal block is nonlocal or not does not make an obvious difference in the heat transfer process. Based on the temperature profiles from TT-MD, we construct a new mixed series-parallel thermal circuit. We show that such a thermal circuit is essential for understanding metal/nonmetal interfacial transport, while calculating a single resistance without solving temperature profiles as done in most previous studies is generally incomplete. As a comparison, the simple series circuit that neglects the cross-interface electron-phonon coupling could overestimate the interfacial resistance, while the simple parallel circuit in the original Overhauser's model underestimates the total interfacial resistance.

Pitch adaptors of the ATLAS-SCT Endcap detector modules

International Nuclear Information System (INIS)

Ullan, M; Lozano, M; Campabadal, F; Fleta, C; Pellegrini, G; Garcia, C; Gonzalez, F

2007-01-01

Interconnection between detectors and electronics in modern High Energy Physics has become an issue of difficult solution due to the need to integrate both parts in the same module and the need for a low mass, simple connection. The Endcap section of the Semiconductor Tracker (SCT) of the ATLAS experiment at CERN has adopted the solution of using interface devices called pitch adaptors or fan-ins that, mounted on the modules, and using automatic wire bonding, connect the detector's multiple channels to the front-end electronics, adapting their different designs (pad pitch, dimensions, position). This paper describes the characteristics of these devices, the qualification tests that they have been submitted to, and the final results of their fabrication including quality assurance procedures

Photon and electron collimator effects on electron output and abutting segments in energy modulated electron therapy

International Nuclear Information System (INIS)

Olofsson, Lennart; Karlsson, Magnus G.; Karlsson, Mikael

2005-01-01

In energy modulated electron therapy a large fraction of the segments will be arranged as abutting segments where inhomogeneities in segment matching regions must be kept as small as possible. Furthermore, the output variation between different segments should be minimized and must in all cases be well predicted. For electron therapy with add-on collimators, both the electron MLC (eMLC) and the photon MLC (xMLC) contribute to these effects when an xMLC tracking technique is utilized to reduce the x-ray induced leakage. Two add-on electron collimator geometries have been analyzed using Monte Carlo simulations: One isocentric eMLC geometry with an isocentric clearance of 35 cm and air or helium in the treatment head, and one conventional proximity geometry with a clearance of 5 cm and air in the treatment head. The electron fluence output for 22.5 MeV electrons is not significantly affected by the xMLC if the shielding margins are larger than 2-3 cm. For small field sizes and 9.6 MeV electrons, the isocentric design with helium in the treatment head or shielding margins larger than 3 cm is needed to avoid a reduced electron output. Dose inhomogeneity in the matching region of electron segments is, in general, small when collimator positions are adjusted to account for divergence in the field. The effect of xMLC tracking on the electron output can be made negligible while still obtaining a substantially reduced x-ray leakage contribution. Collimator scattering effects do not interfere significantly when abutting beam techniques are properly applied

Modulation of auroral electron fluxes in the frequency range 50 kHz to 10 MHz

Science.gov (United States)

Spiger, R. J.; Murphree, J. S.; Anderson, H. R.; Loewenstein, R. F.

1976-01-01

A sounding rocket-borne electron detector of high time resolution is used to search for modulation of auroral electron fluxes in the frequency range 50 kHz to 10 MHz and energy range 5-7 keV. Data were telemetered to ground via a 93-kHz subcarrier. A cross-correlation analysis of the data collected indicates low-level modulation near the detection threshold of the instrument. Two U-1 events are observed which are interpreted as indications of modulation. The two modulation events occur during a period of increasing flux for a region marking the boundary between two current sheets detected by the payload magnetometer. The strongest argument against interference contamination is the lack of any observable modulation at times other than those mentioned in the study.

Amplitude modulation of quantum-ion-acoustic wavepackets in electron-positron-ion plasmas: Modulational instability, envelope modes, extreme wavesa)

Science.gov (United States)

Rahman, Ata-ur-; Kerr, Michael Mc; El-Taibany, Wael F.; Kourakis, Ioannis; Qamar, A.

2015-02-01

A semirelativistic fluid model is employed to describe the nonlinear amplitude modulation of low-frequency (ionic scale) electrostatic waves in an unmagnetized electron-positron-ion plasma. Electrons and positrons are assumed to be degenerated and inertialess, whereas ions are warm and classical. A multiscale perturbation method is used to derive a nonlinear Schrödinger equation for the envelope amplitude, based on which the occurrence of modulational instability is investigated in detail. Various types of localized ion acoustic excitations are shown to exist, in the form of either bright type envelope solitons (envelope pulses) or dark-type envelope solitons (voids, holes). The plasma configurational parameters (namely, the relativistic degeneracy parameter, the positron concentration, and the ionic temperature) are shown to affect the conditions for modulational instability significantly, in fact modifying the associated threshold as well as the instability growth rate. In particular, the relativistic degeneracy parameter leads to an enhancement of the modulational instability mechanism. Furthermore, the effect of different relevant plasma parameters on the characteristics (amplitude, width) of these envelope solitary structures is also presented in detail. Finally, the occurrence of extreme amplitude excitation (rogue waves) is also discussed briefly. Our results aim at elucidating the formation and dynamics of nonlinear electrostatic excitations in superdense astrophysical regimes.

Amplitude modulation of quantum-ion-acoustic wavepackets in electron-positron-ion plasmas: Modulational instability, envelope modes, extreme waves

Energy Technology Data Exchange (ETDEWEB)

Rahman, Ata-ur-, E-mail: ata797@yahoo.com [Department of Physics, University of Peshawar, Peshawar 25000 (Pakistan); Department of Physics, Islamia College Peshawar, Khyber Pakhtunkhwa (Pakistan); Kerr, Michael Mc, E-mail: mjamckerr@gmail.com; Kourakis, Ioannis, E-mail: IoannisKourakisSci@gmail.com [Centre for Plasma Physics, Department of Physics and Astronomy, Queen' s University Belfast, BT7 1NN Northern Ireland (United Kingdom); El-Taibany, Wael F., E-mail: eltaibany@hotmail.com [Department of Physics, Faculty of Science, Damietta University, New Damietta, P.O. Box 34517 (Egypt); Department of Physics, College of Science for Girls in Abha, King Khalid University, P.O. Box 960, Abha (Saudi Arabia); Qamar, A., E-mail: anisaqamar@gmail.com [Department of Physics, University of Peshawar, Peshawar 25000 (Pakistan)

2015-02-15

A semirelativistic fluid model is employed to describe the nonlinear amplitude modulation of low-frequency (ionic scale) electrostatic waves in an unmagnetized electron-positron-ion plasma. Electrons and positrons are assumed to be degenerated and inertialess, whereas ions are warm and classical. A multiscale perturbation method is used to derive a nonlinear Schrödinger equation for the envelope amplitude, based on which the occurrence of modulational instability is investigated in detail. Various types of localized ion acoustic excitations are shown to exist, in the form of either bright type envelope solitons (envelope pulses) or dark-type envelope solitons (voids, holes). The plasma configurational parameters (namely, the relativistic degeneracy parameter, the positron concentration, and the ionic temperature) are shown to affect the conditions for modulational instability significantly, in fact modifying the associated threshold as well as the instability growth rate. In particular, the relativistic degeneracy parameter leads to an enhancement of the modulational instability mechanism. Furthermore, the effect of different relevant plasma parameters on the characteristics (amplitude, width) of these envelope solitary structures is also presented in detail. Finally, the occurrence of extreme amplitude excitation (rogue waves) is also discussed briefly. Our results aim at elucidating the formation and dynamics of nonlinear electrostatic excitations in superdense astrophysical regimes.

Interfacing Sail Modules for Use with “Space Tugs”

Directory of Open Access Journals (Sweden)

Florio Dalla Vedova

2018-05-01

Full Text Available The paper introduces and describes the recent and still ongoing development activities performed in Luxembourg for In-Orbit Attach Mechanisms for (Drag Sails Modules to be operated from Space Tugs. After some preparatory work aiming at understanding the possible operational aspects and implications of mating interfaces between these space systems, three possible designs of In-Orbit Attach Mechanisms have been proposed and completed for their 3D (Metal and Plastic Printing, a new manufacturing technology assessed within this project. The Plastic-printed prototype underwent a series of automated tests in which a robotic arm, equipped with an advanced force sensor, replicated four docking scenarii in ideal and degraded modes. The observation of the forces and torque behaviors at and after impact allowed one to characterize the typical patterns for the various contacts but also, to identify a type of potentially dramatic impact for the safety of the docking and its equipment: in the case of the off-axis approach, “point” contacts shall be avoided, as they instantaneously transfer the total kinetic energy in a small area that could break.

Analytical formulation for modulation of time-resolved dynamical Franz-Keldysh effect by electron excitation in dielectrics

Science.gov (United States)

Otobe, T.

2017-12-01

Analytical formulation of subcycle modulation (SCM) of dielectrics including electron excitation is presented. The SCM is sensitive to not only the time-resolved dynamical Franz-Keldysh effect (Tr-DFKE) [T. Otobe et al., Phys. Rev. B 93, 045124 (2016), 10.1103/PhysRevB.93.045124], which is the nonlinear response without the electron excitation, but also the excited electrons. The excited electrons enhance the modulation with even harmonics of pump laser frequency, and generate the odd-harmonics components. The new aspect of SCM is a consequence of (i) the interference between the electrons excited by the pump laser and those excited by the probe-pulse laser and (ii) oscillation of the generated wave packed by the pump laser. When the probe- and pump-pulse polarizations are parallel, the enhancement of the even harmonics and the generation of the odd-harmonics modulation appear. However, if the polarizations are orthogonal, the effect arising from the electron excitations becomes weak. By comparing the parabolic and cosine band models, I found that the electrons under the intense laser field move as quasifree particles.

Electric field modulation of Schottky barrier height in graphene/MoSe2 van der Waals heterointerface

International Nuclear Information System (INIS)

Sata, Yohta; Moriya, Rai; Morikawa, Sei; Yabuki, Naoto; Masubuchi, Satoru; Machida, Tomoki

2015-01-01

We demonstrate a vertical field-effect transistor based on a graphene/MoSe 2 van der Waals (vdW) heterostructure. The vdW interface between the graphene and MoSe 2 exhibits a Schottky barrier with an ideality factor of around 1.3, suggesting a high-quality interface. Owing to the low density of states in graphene, the position of the Fermi level in the graphene can be strongly modulated by an external electric field. Therefore, the Schottky barrier height at the graphene/MoSe 2 vdW interface is also modulated. We demonstrate a large current ON-OFF ratio of 10 5 . These results point to the potential high performance of the graphene/MoSe 2 vdW heterostructure for electronics applications

Stepwise approach to establishing multiple outreach laboratory information system-electronic medical record interfaces.

Science.gov (United States)

Pantanowitz, Liron; Labranche, Wayne; Lareau, William

2010-05-26

Clinical laboratory outreach business is changing as more physician practices adopt an electronic medical record (EMR). Physician connectivity with the laboratory information system (LIS) is consequently becoming more important. However, there are no reports available to assist the informatician with establishing and maintaining outreach LIS-EMR connectivity. A four-stage scheme is presented that was successfully employed to establish unidirectional and bidirectional interfaces with multiple physician EMRs. This approach involves planning (step 1), followed by interface building (step 2) with subsequent testing (step 3), and finally ongoing maintenance (step 4). The role of organized project management, software as a service (SAAS), and alternate solutions for outreach connectivity are discussed.

Inverse planning of energy-modulated electron beams in radiotherapy

International Nuclear Information System (INIS)

Gentry, John R.; Steeves, Richard; Paliwal, Bhudatt A.

2006-01-01

The use of megavoltage electron beams often poses a clinical challenge in that the planning target volume (PTV) is anterior to other radiosensitive structures and has variable depth. To ensure that skin as well as the deepest extent of the PTV receives the prescribed dose entails prescribing to a point beyond the depth of peak dose for a single electron energy. This causes dose inhomogeneities and heightened potential for tissue fibrosis, scarring, and possible soft tissue necrosis. Use of bolus on the skin improves the entrant dose at the cost of decreasing the therapeutic depth that can be treated. Selection of a higher energy to improve dose homogeneity results in increased dose to structures beyond the PTV, as well as enlargement of the volume receiving heightened dose. Measured electron data from a linear accelerator was used as input to create an inverse planning tool employing energy and intensity modulation using bolus (e-IMRT TM ). Using tools readily available in a radiotherapy department, the applications of energy and intensity modulation on the central axis makes it possible to remove hot spots of 115% or more over the depths clinically encountered. The e-IMRT TM algorithm enables the development of patient-specific dose distributions with user-defined positions of peak dose, range, and reduced dose to points beyond the prescription point

Proton Irradiation-Induced Metal Voids in Gallium Nitride High Electron Mobility Transistors

Science.gov (United States)

2015-09-01

ABBREVIATIONS 2DEG two-dimensional electron gas AlGaN aluminum gallium nitride AlOx aluminum oxide CCD charged coupled device CTE coefficient of...frequency of FETs. Such a device may also be known as a heterojunction field-effect transistor (HFET), modulation-doped field-effect transistor (MODFET...electrons. This charge attracts electrons to the interface, forming the 2DEG channel. The HEMT includes a heterojunction of two semiconducting

Magnetic two-dimensional electron gas at the manganite-buffered LaAlO3/SrTiO3 interface

DEFF Research Database (Denmark)

R. Zhang, H.; Zhang, Y.; Zhang, H.

2017-01-01

Fabrication of highly mobile spin-polarized two-dimensional electron gas (2DEG) is crucially important for both fundamental and applied research. Usually, spin polarization appears below 10 K for the 2DEG of LaAlO3/SrTiO3 interface, stemming from the magnetic ordering of Ti3+ ions with the mediat......Fabrication of highly mobile spin-polarized two-dimensional electron gas (2DEG) is crucially important for both fundamental and applied research. Usually, spin polarization appears below 10 K for the 2DEG of LaAlO3/SrTiO3 interface, stemming from the magnetic ordering of Ti3+ ions...... with the mediation of itinerant electrons. Herein, we report a magnetic 2DEG at a La7/8Sr1/8MnO3-buffered LaAlO3/SrTiO3 interface, which simultaneously shows electrically tunable anomalous Hall effect and high conductivity. The spin-polarized temperature for the 2DEG is promoted to 30 K while the mobility remains...... high. The magnetism likely results from a gradient manganese interdiffusion into SrTiO3. The present work demonstrates the great potential of manganite-buffered LaAlO3/SrTiO3 interfaces for spintronic applications....

Hermetic electronic packaging of an implantable brain-machine-interface with transcutaneous optical data communication.

Science.gov (United States)

Schuettler, Martin; Kohler, Fabian; Ordonez, Juan S; Stieglitz, Thomas

2012-01-01

Future brain-computer-interfaces (BCIs) for severely impaired patients are implanted to electrically contact the brain tissue. Avoiding percutaneous cables requires amplifier and telemetry electronics to be implanted too. We developed a hermetic package that protects the electronic circuitry of a BCI from body moisture while permitting infrared communication through the package wall made from alumina ceramic. The ceramic package is casted in medical grade silicone adhesive, for which we identified MED2-4013 as a promising candidate.

Tuning the Electron Gas at an Oxide Heterointerface via Free Surface Charges

Energy Technology Data Exchange (ETDEWEB)

Bell, Christopher

2011-08-11

Oxide heterointerfaces are emerging as one of the most exciting materials systems in condensed matter science. One remarkable example is the LaAlO{sub 3}/SrTiO{sub 3} (LAO/STO) interface, a model system in which a highly mobile electron gas forms between two band insulators, exhibiting two dimensional superconductivity and unusual magnetotransport properties. An ideal tool to tune such an electron gas is the electrostatic field effect. In principle, the electrostatic field can be generated by bound charges due to polarization (as in the normal and ferroelectric field effects) or by adding excess free charge. In previous studies, a large modulation of the carrier density and mobility of the LAO/STO interface has been achieved using the normal field effect. However, little attention has been paid to the field effect generated by free charges. This issue is scarcely addressed, even in conventional semiconductor devices, since the free charges are typically not stable. Here, we demonstrate an unambiguous tuning of the LAO/STO interface conductivity via free surface charges written using conducting atomic force microscopy (AFM). The modulation of the carrier density was found to be reversible, nonvolatile and surprisingly large, {approx}3 x 10{sup 13} cm{sup -2}, comparable to the maximum modulation by the normal field effect. Our finding reveal the efficiency of free charges in controlling the conductivity of this oxide interface, and suggest that this technique may be extended more generally to other oxide systems.

Modeling the Charge Transport in Graphene Nano Ribbon Interfaces for Nano Scale Electronic Devices

Science.gov (United States)

Kumar, Ravinder; Engles, Derick

2015-05-01

In this research work we have modeled, simulated and compared the electronic charge transport for Metal-Semiconductor-Metal interfaces of Graphene Nano Ribbons (GNR) with different geometries using First-Principle calculations and Non-Equilibrium Green's Function (NEGF) method. We modeled junctions of Armchair GNR strip sandwiched between two Zigzag strips with (Z-A-Z) and Zigzag GNR strip sandwiched between two Armchair strips with (A-Z-A) using semi-empirical Extended Huckle Theory (EHT) within the framework of Non-Equilibrium Green Function (NEGF). I-V characteristics of the interfaces were visualized for various transport parameters. The distinct changes in conductance and I-V curves reported as the Width across layers, Channel length (Central part) was varied at different bias voltages from -1V to 1 V with steps of 0.25 V. From the simulated results we observed that the conductance through A-Z-A graphene junction is in the range of 10-13 Siemens whereas the conductance through Z-A-Z graphene junction is in the range of 10-5 Siemens. These suggested conductance controlled mechanisms for the charge transport in the graphene interfaces with different geometries is important for the design of graphene based nano scale electronic devices like Graphene FETs, Sensors.

Electronic states at Si-SiO2 interface introduced by implantation of Si in thermal SiO2

International Nuclear Information System (INIS)

Kalnitsky, A.; Poindexter, E.H.; Caplan, P.J.

1990-01-01

Interface traps due to excess Si introduced into the Si-SiO 2 system by ion implantation are investigated. Implanted oxides are shown to have interface traps at or slightly above the Si conduction band edge with densities proportional to the density of off-stoichiometric Si at the Si-SiO 2 interface. Diluted oxygen annealing is shown to result in physical separation of interface traps and equilibrium substrate electrons, demonstrating that ''interface'' states are located within a 0.5 nm thick layer of SiO 2 . Possible charge trapping mechanisms are discussed and the effect of these traps on MOS transistor characteristics is described using a sheet charge model. (author)

ICRF power deposition profile and determination of the electron thermal diffusivity by modulation experiments in JET

International Nuclear Information System (INIS)

Gambier, D.J.; Evrard, M.P.; Adam, J.

1990-01-01

The power deposition profile in the ion cyclotron range of frequencies (ICRF) has been investigated experimentally in JET by means of a square wave modulated RF perturbation. The study has been conducted in D(H) and D( 3 He) plasmas for two heating scenarios. In D( 3 He) plasmas and for central heating in a scenario where mode conversion to Bernstein waves is accessible, the direct power deposition profile on electrons has been derived. It accounts for 15% of the total coupled power and extends over 25% of the minor radius. Outside the RF power deposition zone, the electron thermal diffusivity χ e inside the inversion radius surface (r i ) can be estimated through observation of the diffusive electronic transport. In discharges without monster sawteeth and for a low central temperature gradient (∇T e (r ≤ r i ) ≤ ∇T e (r ≥ r i ) approx. = 5 keV·m -1 ) the value obtained is small (approx. =0.24 +- 0.05 m 2 · s -1 ), typically ten times lower than χ e values deduced from heat pulse propagation in similar discharges at radii larger than the inversion radius. For the D(H) minority heating scheme, a large fraction of the ICRF modulated power is absorbed by minority ions, and the minority tail is modulated with a characteristic ion-electron (i-e) slowing-down time. In this scheme, electron heating occurs only through collisions with the minority ion tail and no modulation of the electron temperature is observed in sawtoothing discharges. This is interpreted as a consequence of the long i-e equipartition time, acting as an integrator for the modulated ICRF signal. Finally, a correlation between the time of the sawtooth crash and the periodic turn-off of the ICRF power is found and its consequence for modulation experiments is reviewed. (author). 22 refs, 16 figs

Effect of EHR user interface changes on internal prescription discrepancies.

Science.gov (United States)

Turchin, A; Sawarkar, A; Dementieva, Y A; Breydo, E; Ramelson, H

2014-01-01

To determine whether specific design interventions (changes in the user interface (UI)) of an electronic health record (EHR) medication module are associated with an increase or decrease in the incidence of contradictions between the structured and narrative components of electronic prescriptions (internal prescription discrepancies). We performed a retrospective analysis of 960,000 randomly selected electronic prescriptions generated in a single EHR between 01/2004 and 12/2011. Internal prescription discrepancies were identified using a validated natural language processing tool with recall of 76% and precision of 84%. A multivariable autoregressive integrated moving average (ARIMA) model was used to evaluate the effect of five UI changes in the EHR medication module on incidence of internal prescription discrepancies. Over the study period 175,725 (18.4%) prescriptions were found to have internal discrepancies. The highest rate of prescription discrepancies was observed in March 2006 (22.5%) and the lowest in March 2009 (15.0%). Addition of "as directed" option to the dropdown decreased prescription discrepancies by 195 / month (p = 0.0004). An non-interruptive alert that reminded providers to ensure that structured and narrative components did not contradict each other decreased prescription discrepancies by 145 / month (p = 0.03). Addition of a "Renew / Sign" button to the Medication module (a negative control) did not have an effect in prescription discrepancies. Several UI changes in the electronic medication module were effective in reducing the incidence of internal prescription discrepancies. Further research is needed to identify interventions that can completely eliminate this type of prescription error and their effects on patient outcomes.

Application of a generalized interface module to the coupling of PARCS with both RELAP5 and TRAC-M

Energy Technology Data Exchange (ETDEWEB)

Barber, D.A.; Wang, W. [SCIENTECH, Inc. (United States); Miller, R.M.; Downar, T.J. [Purdue Univ., West Lafayette, IN (United States); Joo, H.G. [Korean Atomic Energy Research Inst., Seoul (Korea, Republic of); Mousseau, V.A. [Los Alamos National Lab., NM (United States); Ebert, D.E. [Nuclear Regulatory Commission, Washington, DC (United States)

1999-04-01

In an effort to more easily assess various combinations of 3-D neutronic/thermal-hydraulic codes, the USNRC has sponsored the development of a generalized interface module for the coupling of any thermal-hydraulics code to any spatial kinetics code. In this design, the thermal-hydraulics, general interface, and spatial kinetics codes function independently and utilize the Parallel Virtual Machine (PVM) software to manage inter-process communication. Using this interface, the USNRC version of the 3D neutron kinetics code, PARCS, has been coupled to the USNRC system analysis codes RELAP5 and TRAC-M. RELAP5/PARCS assessment results are presented for an OECD/NEA main steam line break benchmark problem. The assessment of TRAC-M/PARCS has only recently been initiated; nonetheless, the capabilities of the coupled code are presented for the OECD/NEA main steam line break benchmark problem.

Nano features of Al/Au ultrasonic bond interface observed by high resolution transmission electron microscopy

International Nuclear Information System (INIS)

Ji Hongjun; Li Mingyu; Kim, Jong-Myung; Kim, Dae-Won; Wang Chunqing

2008-01-01

Nano-scale interfacial details of ultrasonic AlSi1 wire wedge bonding to a Au/Ni/Cu pad were investigated using high resolution transmission electron microscopy (HRTEM). The intermetallic phase Au 8 Al 3 formed locally due to diffusion and reaction activated by ultrasound at the Al/Au bond interface. Multilayer sub-interfaces roughly parallel to the wire/pad interface were observed among this phase, and interdiffusional features near the Au pad resembled interference patterns, alternately dark and bright bars. Solid-state diffusion theory cannot be used to explain why such a thick compound formed within milliseconds at room temperature. The major formation of metallurgical bonds was attributed to ultrasonic cyclic vibration

A bias-tunable electron-spin filter based on a two-dimensional electron gas modulated by ferromagnetic-Schottky metal stripes

Energy Technology Data Exchange (ETDEWEB)

Lu Jianduo, E-mail: l_j316@163.co [Hubei Province Key Laboratory of Systems Science in Metallurgical Process, Wuhan University of Science and Technology, Wuhan 430081 (China); Li Yunbao; Yun Meijuan [Hubei Province Key Laboratory of Systems Science in Metallurgical Process, Wuhan University of Science and Technology, Wuhan 430081 (China); Zheng Wei [Key Laboratory of Dynamic Geodesy, Institute of Geodesy and Geophysics, Chinese Academy of Sciences, Wuhan 430077 (China)

2011-03-28

We investigate the effect of the bias in an electron-spin filter based on a two-dimensional electron gas modulated by ferromagnetic-Schottky metal stripes. The numerical results show that the electron transmission and the conductance as well as the spin polarization are strongly dependent on the bias applied to the device. - Research highlights: We propose a bias-tunable electron-spin filter. The transmission and the conductance depend on the bias and the electron energy. The spin polarization depends on the bias and the electron energy. The results are helpful for making new types of bias-tunable spin filters.

Ultrafast dynamics of electrons at interfaces

Energy Technology Data Exchange (ETDEWEB)

McNeill, Jason Douglas [Univ. of California, Berkeley, CA (United States)

1999-05-03

Electronic states of a thin layer of material on a surface possess unique physical and chemical properties. Some of these properties arise from the reduced dimensionality of the thin layer with respect to the bulk or the properties of the electric field where two materials of differing dielectric constants meet at an interface. Other properties are related to the nature of the surface chemical bond. Here, the properties of excess electrons in thin layers of Xenon, Krypton, and alkali metals are investigated, and the bound state energies and effective masses of the excess electrons are determined using two-photon photoemission. For Xenon, the dependence of bound state energy, effective mass, and lifetime on layer thickness from one to nine layers is examined. Not all quantities were measured at each coverage. The two photon photoemission spectra of thin layers of Xenon on a Ag(111) substrate exhibit a number of sharp, well-defined peaks. The binding energy of the excess electronic states of Xenon layers exhibited a pronounced dependence on coverage. A discrete energy shift was observed for each additional atomic layer. At low coverage, a series of states resembling a Rydberg series is observed. This series is similar to the image state series observed on clean metal surfaces. Deviations from image state energies can be described in terms of the dielectric constant of the overlayer material and its effect on the image potential. For thicker layers of Xe (beyond the first few atomic layers), the coverage dependence of the features begins to resemble that of quantum well states. Quantum well states are related to bulk band states. However, the finite thickness of the layer restricts the perpendicular wavevector to a discrete set of values. Therefore, the spectrum of quantum well states contains a series of peaks which correspond to the various allowed values of the perpendicular wavevector. Analysis of the quantum well spectrum yields electronic band structure

Twin relationships of 5M modulated martensite in Ni-Mn-Ga alloy

International Nuclear Information System (INIS)

Li Zongbin; Zhang Yudong; Esling, Claude; Zhao Xiang; Zuo Liang

2011-01-01

Highlights: → We determine orientation relationships of 5M modulated martensite in NiMnGa alloy. → Accurate EBSD mapping is performed using monoclinic superstructure. → Four distinct variants mutually twin-related to each other are revealed. → Three twinning types and full twinning elements are identified. → Twin interfaces do coincide with respective twinning planes. - Abstract: For Ni-Mn-Ga ferromagnetic shape memory alloys, the characteristic features of modulated martensite (including the number/shape of constituent variants, the inter-variant orientation relationship and the geometrical distribution of variant interfaces) determine the attainability of the shape memory effect. In the present work, a comprehensive microstructural and crystallographic investigation has been conducted on a bulk polycrystalline Ni 50 Mn 28 Ga 22 alloy. As a first attempt, the orientation measurements by electron backscatter diffraction (EBSD) - using the precise information on the commensurate 5M modulated monoclinic superstructure (instead of the conventionally simplified non-modulated tetragonal structure) - were successfully performed to identify the crystallographic orientations on an individual basis. Consequently, the morphology of modulated martensite, the orientation relationships between adjacent variants and the characters of twin interfaces were unambiguously determined. With the thus-obtained full-featured image on the configuration of martensitic variants, the possibility of microstructural modification by proper mechanical 'training' was further discussed. This new effort makes it feasible to explore the crystallographic/microstructural correlations in modulated martensite with high statistical reliability, which in turn provides useful guidance for optimizing the microstructure and shape memory performance.

VME Data Acquisition Modules for MINERvA Experiment

Energy Technology Data Exchange (ETDEWEB)

Baldin, B.; /fermilab

2010-01-01

This document describes two VME modules developed for MINERvA experiment at Fermilab. The Chain ReadOut Controller (CROC) module has four serial data channels and can interface with up to 48 front-ends using standard CAT5e networking cable. The data transmission rate of each channel is 160 Mbit/s. The maximum data transmission rate via VME bus is {approx}18 MB/s. The Chain Readout Interface Module (CRIM) is designed to provide various interface functions for the CROC module. It is compatible with MINOS MTM timing module and can be used to distribute timing signals to four CROC modules. The CRIM module also has a data port compatible with the CROC serial data interface. The data port can be used for diagnostic purpose and can generate triggers from front-end events. The CRIM module is a standard D08(O) interrupter module.

A Temperature-Hardened Sensor Interface with a 12-Bit Digital Output Using a Novel Pulse Width Modulation Technique

Directory of Open Access Journals (Sweden)

Emna Chabchoub

2018-04-01

Full Text Available A fully integrated sensor interface for a wide operational temperature range is presented. It translates the sensor signal into a pulse width modulated (PWM signal that is then converted into a 12-bit digital output. The sensor interface is based on a pair of injection locked oscillators used to implement a differential time-domain architecture with low sensitivity to temperature variations. A prototype has been fabricated using a 180 nm partially depleted silicon-on-insulator (SOI technology. Experimental results demonstrate a thermal stability as low as 65 ppm/°C over a large temperature range from −20 °C up to 220 °C.

New and precise construction of the local interstellar electron spectrum from the radio background and an application to the solar modulation of cosmic rays showing an incompatability of the electron and nuclei modulation using the spherically symmetric Fokker-Planck equation

International Nuclear Information System (INIS)

Rockstroh, J.M.

1977-01-01

Cosmic-ray electrons generate the observed radio-frequency background. Previous attempts in the literature to reconcile quantitatively the measured radio-frequency intensity with the intensity deduced from the electron spectrum measured at earth have culminated in the problem that to get the respective emissivities to agree, an unacceptably high interstellar B field must be chosen. In the light of new experimental data on the emissivity as deduced from H II region studies and on the functional dependence of the diffusion coefficient with solar radius and particle rigidity, the assumptions under which the electron emissivity comparison has been made have been reexamined closely. The paradox between predicted and measured emissivity was resolved by ascribing to the magnetic fields of the galaxy a distribution of magnetic field strengths. From modified synchrotron formulas, the interstellar electron spectrum has been constructed from the radio frequency emission data with greatly improved precision. The interstellar electron spectrum has been determined independently of the solar modulation and provides, therefore, an estimate of the absolute depth of the electron modulation. Then the measured electron, proton, and helium-nuclei fluxes were systematically compared to the predictions of the spherically symmetric Fokker-Planck equation using the electron modulation as a base. A previously unnoticed non-tracking of the modulation parameters was observed during the recent recovery that did not occur during the 1965 to 1969 period. Although the argument could be presented just as well by attributing the anomaly to the nuclei, the discussion here arbitrarily tailored it to the electrons, and this new phenomenon was named, the modulation reluctance of the cosmic-ray electrons

Propagation of modulated electron and X-ray beams through matter and interactions with radio-frequency structures

Science.gov (United States)

Harris, J. R.; Miller, R. B.

2018-02-01

The generation and evolution of modulated particle beams and their interactions with resonant radiofrequency (RF) structures are of fundamental interest for both particle accelerator and vacuum electronic systems. When the constraint of propagation in a vacuum is removed, the evolution of such beams can be greatly affected by interactions with matter including scattering, absorption, generation of atmospheric plasma, and the production of multiple generations of secondary particles. Here, we study the propagation of 21 MeV and 25 MeV electron beams produced in S-band and L-band linear accelerators, and their interaction with resonant RF structures, under a number of combinations of geometry, including transmission through both air and metal. Both resonant and nonresonant interactions were observed, with the resonant interactions indicating that the RF modulation on the electron beam is at least partially preserved as the beam propagates through air and metal. When significant thicknesses of metal are placed upstream of a resonant structure, preventing any primary beam electrons from reaching the structure, RF signals could still be induced in the structures. This indicated that the RF modulation present on the electron beam was also impressed onto the x-rays generated when the primary electrons were stopped in the metal, and that this RF modulation was also present on the secondary electrons generated when the x-rays struck the resonant structures. The nature of these interactions and their sensitivities to changes in system configurations will be discussed.

Applying of USB interface technique in nuclear spectrum acquisition system

International Nuclear Information System (INIS)

Zhou Jianbin; Huang Jinhua

2004-01-01

This paper introduces applying of USB technique and constructing nuclear spectrum acquisition system via PC's USB interface. The authors choose the USB component USB100 module and the W77E58μc to do the key work. It's easy to apply USB interface technique, when USB100 module is used. USB100 module can be treated as a common I/O component for the μc controller, and can be treated as a communication interface (COM) when connected to PC' USB interface. It's easy to modify the PC's program for the new system with USB100 module. The authors can smoothly change from ISA, RS232 bus to USB bus. (authors)

Nonlocality, Correlations, and Magnetotransport in a Spatially Modulated Two-Dimensional Electron Gas

Science.gov (United States)

Raichev, O. E.

2018-04-01

It is shown that the classical commensurability phenomena in weakly modulated two-dimensional electron systems is a manifestation of the intrinsic properties of the correlation functions describing a homogeneous electron gas in a magnetic field. The theory demonstrates the importance for consideration of nonlocal response and removes the gap between classical and quantum approaches to magnetotransport in such systems.

Metallic Interface Emerging at Magnetic Domain Wall of Antiferromagnetic Insulator: Fate of Extinct Weyl Electrons

Directory of Open Access Journals (Sweden)

Youhei Yamaji

2014-05-01

Full Text Available Topological insulators, in contrast to ordinary semiconductors, accompany protected metallic surfaces described by Dirac-type fermions. Here, we theoretically show that another emergent two-dimensional metal embedded in the bulk insulator is realized at a magnetic domain wall. The domain wall has long been studied as an ingredient of both old-fashioned and leading-edge spintronics. The domain wall here, as an interface of seemingly trivial antiferromagnetic insulators, emergently realizes a functional interface preserved by zero modes with robust two-dimensional Fermi surfaces, where pyrochlore iridium oxides proposed to host the condensed-matter realization of Weyl fermions offer such examples at low temperatures. The existence of in-gap states that are pinned at domain walls, theoretically resembling spin or charge solitons in polyacetylene, and protected as the edges of hidden one-dimensional weak Chern insulators characterized by a zero-dimensional class-A topological invariant, solves experimental puzzles observed in R_{2}Ir_{2}O_{7} with rare-earth elements R. The domain wall realizes a novel quantum confinement of electrons and embosses a net uniform magnetization that enables magnetic control of electronic interface transports beyond the semiconductor paradigm.

Ultrafast electron injection at the cationic porphyrin-graphene interface assisted by molecular flattening

KAUST Repository

Aly, Shawkat Mohammede; Parida, Manas R.; Alarousu, Erkki; Mohammed, Omar F.

2014-01-01

The steady-state and femtosecond (fs) time-resolved data clearly demonstrate that the charge transfer (CT) process at the porphyrin-graphene carboxylate (GC) interfaces can be tuned from zero to very sufficient and ultrafast by changing the electronic structure of the meso unit and the redox properties of the porphyrin cavity. This journal is © the Partner Organisations 2014.

Design and Realization of Universal Data Interface

Directory of Open Access Journals (Sweden)

Jong-Woo Kim

2005-03-01

Full Text Available KARI studied data interface of Space Applications for developing Space Experimental Instrument in International Space Station, designed, and manufactured the UDIS (International Sapce Station Universal Data Interface simulator according to requirements of the data interface. This paper explains the design and implementation of UDIS for space application. UDIS is the instrument which simulate to interface the data from ISS to experiment module, payload and habitation module and use the development of a experiment system in the space. This simulator will be used to the GSE (Ground Support Equipment for test of experiment system. By realization of the simulator, we ensure data interface skills for a manned-space data communication system.

Gate-tunable polarized phase of two-dimensional electrons at the LaAlO3/SrTiO3 interface.

Science.gov (United States)

Joshua, Arjun; Ruhman, Jonathan; Pecker, Sharon; Altman, Ehud; Ilani, Shahal

2013-06-11

Controlling the coupling between localized spins and itinerant electrons can lead to exotic magnetic states. A novel system featuring local magnetic moments and extended 2D electrons is the interface between LaAlO3 and SrTiO3. The magnetism of the interface, however, was observed to be insensitive to the presence of these electrons and is believed to arise solely from extrinsic sources like oxygen vacancies and strain. Here we show the existence of unconventional electronic phases in the LaAlO3/SrTiO3 system pointing to an underlying tunable coupling between itinerant electrons and localized moments. Using anisotropic magnetoresistance and anomalous Hall effect measurements in a unique in-plane configuration, we identify two distinct phases in the space of carrier density and magnetic field. At high densities and fields, the electronic system is strongly polarized and shows a response, which is highly anisotropic along the crystalline directions. Surprisingly, below a density-dependent critical field, the polarization and anisotropy vanish whereas the resistivity sharply rises. The unprecedented vanishing of the easy axes below a critical field is in sharp contrast with other coupled magnetic systems and indicates strong coupling with the moments that depends on the symmetry of the itinerant electrons. The observed interplay between the two phases indicates the nature of magnetism at the LaAlO3/SrTiO3 interface as both having an intrinsic origin and being tunable.

Enabling grand-canonical Monte Carlo: extending the flexibility of GROMACS through the GromPy python interface module.

Science.gov (United States)

Pool, René; Heringa, Jaap; Hoefling, Martin; Schulz, Roland; Smith, Jeremy C; Feenstra, K Anton

2012-05-05

We report on a python interface to the GROMACS molecular simulation package, GromPy (available at https://github.com/GromPy). This application programming interface (API) uses the ctypes python module that allows function calls to shared libraries, for example, written in C. To the best of our knowledge, this is the first reported interface to the GROMACS library that uses direct library calls. GromPy can be used for extending the current GROMACS simulation and analysis modes. In this work, we demonstrate that the interface enables hybrid Monte-Carlo/molecular dynamics (MD) simulations in the grand-canonical ensemble, a simulation mode that is currently not implemented in GROMACS. For this application, the interplay between GromPy and GROMACS requires only minor modifications of the GROMACS source code, not affecting the operation, efficiency, and performance of the GROMACS applications. We validate the grand-canonical application against MD in the canonical ensemble by comparison of equations of state. The results of the grand-canonical simulations are in complete agreement with MD in the canonical ensemble. The python overhead of the grand-canonical scheme is only minimal. Copyright © 2012 Wiley Periodicals, Inc.

High speed UNIBUS-VME interface

International Nuclear Information System (INIS)

Olmos, P.

1987-01-01

An interface between VME an the UNIBUS of PDP or VAX computer is presented. The system supports high speed parallel communication (up to 1MB/S) and is composed of two modules. One of these is a commercial DR11M board which performs DMA transfers between UNIBUS and the external word. The other is a VME module specifically developed for this application. The interface has been tested under VMS operating system in VAX and VALET-PLUS system for the VME Bus. We describe in detail the VME module and its connection with the DR11M. Software, both in WMS and VALET, is also described. (Author) 7 refs

Stepwise approach to establishing multiple outreach laboratory information system-electronic medical record interfaces

Directory of Open Access Journals (Sweden)

Liron Pantanowitz

2010-01-01

Full Text Available Clinical laboratory outreach business is changing as more physician practices adopt an electronic medical record (EMR. Physician connectivity with the laboratory information system (LIS is consequently becoming more important. However, there are no reports available to assist the informatician with establishing and maintaining outreach LIS-EMR connectivity. A four-stage scheme is presented that was successfully employed to establish unidirectional and bidirectional interfaces with multiple physician EMRs. This approach involves planning (step 1, followed by interface building (step 2 with subsequent testing (step 3, and finally ongoing maintenance (step 4. The role of organized project management, software as a service (SAAS, and alternate solutions for outreach connectivity are discussed.

Electron injection by evolution of self-modulated laser wakefields

International Nuclear Information System (INIS)

Kim, Changbum; Kim, Guang-Hoon; Kim, Jong-Uk; Lee, Hae June; Suk, Hyyong; Ko, In Soo

2003-01-01

Self-injection mechanisms in the self-modulated laser wakefield acceleration (SM-LWFA) are investigated. Two-dimensional (2D) particle-in-cell (PIC) simulations show that a significant amount of plasma electrons can be self-injected into the acceleration phase of a laser wakefield by a dynamic increase in the wake wavelength in the longitudinal direction. In this process, it is found that the wake wavelength increases due to the relativistic effect and this leads to a large amount of electron injection into the wakefields. In this paper, the injection phenomena are studied with 2D simulations and a brief explanation of the new self-injection mechanism is presented. (author)

Formation of a conducting LaAlO3/SrTiO3 interface studied by low-energy electron reflection during growth

Science.gov (United States)

van der Torren, A. J. H.; Liao, Z.; Xu, C.; Gauquelin, N.; Yin, C.; Aarts, J.; van der Molen, S. J.

2017-12-01

The two-dimensional electron gas occurring between the band insulators SrTiO3 and LaAlO3 continues to attract considerable interest, due to the possibility of dynamic control over the carrier density and due to ensuing phenomena such as magnetism and superconductivity. The formation of this conducting interface is sensitive to the growth conditions, but despite numerous investigations there are still questions about the details of the physics involved. In particular, not much is known about the electronic structure of the growing LaAlO3 layer at the growth temperature (around 800°C) in oxygen (pressure around 5 ×10-5 mbar), since analysis techniques at these conditions are not readily available. We developed a pulsed laser deposition system inside a low-energy electron microscope in order to study this issue. The setup allows for layer-by-layer growth control and in situ measurements of the angle-dependent electron reflection intensity, which can be used as a fingerprint of the electronic structure of the surface layers during growth. By using different substrate terminations and growth conditions we observe two families of reflectivity maps, which we can connect either to samples with an AlO2-rich surface and a conducting interface or to samples with a LaO-rich surface and an insulating interface. Our observations emphasize that substrate termination and stoichiometry determine the electronic structure of the growing layer, and thereby the conductance of the interface.

Electronic structures and stability of Ni/Bi2Te3 and Co/Bi2Te3 interfaces

International Nuclear Information System (INIS)

Xiong Ka; Wang Weichao; Alshareef, Husam N; Gupta, Rahul P; Gnade, Bruce E; Cho, Kyeongjae; White, John B

2010-01-01

We investigate the electronic structures and stability for Ni/Bi 2 Te 3 , NiTe/Bi 2 Te 3 , Co/Bi 2 Te 3 and CoTe 2 /Bi 2 Te 3 interfaces by first-principles calculations. It is found that the surface termination strongly affects the band alignment. Ni and Co are found to form Ohmic contacts to Bi 2 Te 3 . The interface formation energy for Co/Bi 2 Te 3 interfaces is much lower than that of Ni/Bi 2 Te 3 interfaces. Furthermore, we found that NiTe on Bi 2 Te 3 is more stable than Ni, while the formation energies for Co and CoTe 2 on Bi 2 Te 3 are comparable.

Density functional theory based study of chlorine doped WS{sub 2}-metal interface

Energy Technology Data Exchange (ETDEWEB)

Chanana, Anuja; Mahapatra, Santanu, E-mail: santanu@dese.iisc.ernet.in [NanoScale Device Research Laboratory, Department of Electronic Systems Engineering, Indian Institute of Science, Bengaluru, Karnataka 560012 (India)

2016-03-07

Investigation of a transition metal dichalcogenide (TMD)-metal interface is essential for the effective functioning of monolayer TMD based field effect transistors. In this work, we employ the Density Functional Theory calculations to analyze the modulation of the electronic structure of monolayer WS{sub 2} with chlorine doping and the relative changes in the contact properties when interfaced with gold and palladium. We initially examine the atomic and electronic structures of pure and doped monolayer WS{sub 2} supercell and explore the formation of midgap states with band splitting near the conduction band edge. Further, we analyze the contact nature of the pure supercell with Au and Pd. We find that while Au is physiosorbed and forms n-type contact, Pd is chemisorped and forms p-type contact with a higher valence electron density. Next, we study the interface formed between the Cl-doped supercell and metals and observe a reduction in the Schottky barrier height (SBH) in comparison to the pure supercell. This reduction found is higher for Pd in comparison to Au, which is further validated by examining the charge transfer occurring at the interface. Our study confirms that Cl doping is an efficient mechanism to reduce the n-SBH for both Au and Pd, which form different types of contact with WS{sub 2}.

Monte Carlo based treatment planning for modulated electron beam radiation therapy

Energy Technology Data Exchange (ETDEWEB)

Lee, Michael C. [Radiation Physics Division, Department of Radiation Oncology, Stanford University School of Medicine, Stanford, CA (United States)]. E-mail: mclee@reyes.stanford.edu; Deng Jun; Li Jinsheng; Jiang, Steve B.; Ma, C.-M. [Radiation Physics Division, Department of Radiation Oncology, Stanford University School of Medicine, Stanford, CA (United States)

2001-08-01

A Monte Carlo based treatment planning system for modulated electron radiation therapy (MERT) is presented. This new variation of intensity modulated radiation therapy (IMRT) utilizes an electron multileaf collimator (eMLC) to deliver non-uniform intensity maps at several electron energies. In this way, conformal dose distributions are delivered to irregular targets located a few centimetres below the surface while sparing deeper-lying normal anatomy. Planning for MERT begins with Monte Carlo generation of electron beamlets. Electrons are transported with proper in-air scattering and the dose is tallied in the phantom for each beamlet. An optimized beamlet plan may be calculated using inverse-planning methods. Step-and-shoot leaf sequences are generated for the intensity maps and dose distributions recalculated using Monte Carlo simulations. Here, scatter and leakage from the leaves are properly accounted for by transporting electrons through the eMLC geometry. The weights for the segments of the plan are re-optimized with the leaf positions fixed and bremsstrahlung leakage and electron scatter doses included. This optimization gives the final optimized plan. It is shown that a significant portion of the calculation time is spent transporting particles in the leaves. However, this is necessary since optimizing segment weights based on a model in which leaf transport is ignored results in an improperly optimized plan with overdosing of target and critical structures. A method of rapidly calculating the bremsstrahlung contribution is presented and shown to be an efficient solution to this problem. A homogeneous model target and a 2D breast plan are presented. The potential use of this tool in clinical planning is discussed. (author)

Safety risks associated with the lack of integration and interfacing of hospital health information technologies: a qualitative study of hospital electronic prescribing systems in England.

Science.gov (United States)

Cresswell, Kathrin M; Mozaffar, Hajar; Lee, Lisa; Williams, Robin; Sheikh, Aziz

2017-07-01

Substantial sums of money are being invested worldwide in health information technology. Realising benefits and mitigating safety risks is however highly dependent on effective integration of information within systems and/or interfacing to allow information exchange across systems. As part of an English programme of research, we explored the social and technical challenges relating to integration and interfacing experienced by early adopter hospitals of standalone and hospital-wide multimodular integrated electronic prescribing (ePrescribing) systems. We collected longitudinal qualitative data from six hospitals, which we conceptualised as case studies. We conducted 173 interviews with users, implementers and software suppliers (at up to three different times), 24 observations of system use and strategic meetings, 17 documents relating to implementation plans, and 2 whole-day expert round-table discussions. Data were thematically analysed initially within and then across cases, drawing on perspectives surrounding information infrastructures. We observed that integration and interfacing problems obstructed effective information transfer in both standalone and multimodular systems, resulting in threats to patient safety emerging from the lack of availability of timely information and duplicate data entry. Interfacing problems were immediately evident in some standalone systems where users had to cope with multiple log-ins, and this did not attenuate over time. Multimodular systems appeared at first sight to obviate such problems. However, with these systems, there was a perceived lack of data coherence across modules resulting in challenges in presenting a comprehensive overview of the patient record, this possibly resulting from the piecemeal implementation of modules with different functionalities. Although it was possible to access data from some primary care systems, we found poor two-way transfer of data between hospitals and primary care necessitating

Low-Temperature Presynthesized Crystalline Tin Oxide for Efficient Flexible Perovskite Solar Cells and Modules.

Science.gov (United States)

Bu, Tongle; Shi, Shengwei; Li, Jing; Liu, Yifan; Shi, Jielin; Chen, Li; Liu, Xueping; Qiu, Junhao; Ku, Zhiliang; Peng, Yong; Zhong, Jie; Cheng, Yi-Bing; Huang, Fuzhi

2018-05-02

Organic-inorganic metal halide perovskite solar cells (PSCs) have been emerging as one of the most promising next generation photovoltaic technologies with a breakthrough power conversion efficiency (PCE) over 22%. However, aiming for commercialization, it still encounters challenges for the large-scale module fabrication, especially for flexible devices which have attracted intensive attention recently. Low-temperature processed high-performance electron-transporting layers (ETLs) are still difficult. Herein, we present a facile low-temperature synthesis of crystalline SnO 2 nanocrystals (NCs) as efficient ETLs for flexible PSCs including modules. Through thermal and UV-ozone treatments of the SnO 2 ETLs, the electron transporting resistance of the ETLs and the charge recombination at the interface of ETL/perovskite were decreased. Thus, the hysteresis-free highly efficient rigid and flexible PSCs were obtained with PCEs of 19.20 and 16.47%, respectively. Finally, a 5 × 5 cm 2 flexible PSC module with a PCE of 12.31% (12.22% for forward scan and 12.40% for reverse scan) was fabricated with the optimized perovskite/ETL interface. Thus, employing presynthesized SnO 2 NCs to fabricate ETLs has showed promising for future manufacturing.

Modulation of continuous electron beams in plasma wake-fields

International Nuclear Information System (INIS)

Rosenzweig, J.B.

1988-01-01

In this paper we discuss the interaction of a continuous electron beam with wake-field generated plasma waves. Using a one-dimensional two fluid model, a fully nonlinear analytical description of the interaction is obtained. The phenomena of continuous beam modulation and wave period shortening are discussed. The relationship between these effects and the two-stream instability is also examined. 12 refs., 1 fig

Ultrafast static and diffusion-controlled electron transfer at Ag 29 nanocluster/molecular acceptor interfaces

KAUST Repository

Aly, Shawkat Mohammede; AbdulHalim, Lina G.; Besong, Tabot M.D.; Soldan, Giada; Bakr, Osman; Mohammed, Omar F.

2015-01-01

Efficient absorption of visible light and a long-lived excited state lifetime of silver nanoclusters (Ag29 NCs) are integral properties for these new clusters to serve as light-harvesting materials. Upon optical excitation, electron injection at Ag29 NC/methyl viologen (MV2+) interfaces is very efficient and ultrafast. Interestingly, our femto- and nanosecond time-resolved results demonstrate clearly that both dynamic and static electron transfer mechanisms are involved in photoluminescence quenching of Ag29 NCs. © 2016 The Royal Society of Chemistry.

Ultrafast static and diffusion-controlled electron transfer at Ag 29 nanocluster/molecular acceptor interfaces

KAUST Repository

Aly, Shawkat Mohammede

2015-10-29

Efficient absorption of visible light and a long-lived excited state lifetime of silver nanoclusters (Ag29 NCs) are integral properties for these new clusters to serve as light-harvesting materials. Upon optical excitation, electron injection at Ag29 NC/methyl viologen (MV2+) interfaces is very efficient and ultrafast. Interestingly, our femto- and nanosecond time-resolved results demonstrate clearly that both dynamic and static electron transfer mechanisms are involved in photoluminescence quenching of Ag29 NCs. © 2016 The Royal Society of Chemistry.

Electronic properties of semiconductor surfaces and metal/semiconductor interfaces

Energy Technology Data Exchange (ETDEWEB)

Tallarida, M.

2005-05-15

This thesis reports investigations of the electronic properties of a semiconductor surface (silicon carbide), a reactive metal/semiconductor interface (manganese/silicon) and a non-reactive metal/semiconductor interface (aluminum-magnesium alloy/silicon). The (2 x 1) reconstruction of the 6H-SiC(0001) surface has been obtained by cleaving the sample along the (0001) direction. This reconstruction has not been observed up to now for this compound, and has been compared with those of similar elemental semiconductors of the fourth group of the periodic table. This comparison has been carried out by making use of photoemission spectroscopy, analyzing the core level shifts of both Si 2p and C 1s core levels in terms of charge transfer between atoms of both elements and in different chemical environments. From this comparison, a difference between the reconstruction on the Si-terminated and the C-terminated surface was established, due to the ionic nature of the Si-C bond. The growth of manganese films on Si(111) in the 1-5 ML thickness range has been studied by means of LEED, STM and photoemission spectroscopy. By the complementary use of these surface science techniques, two different phases have been observed for two thickness regimes (<1 ML and >1 ML), which exhibit a different electronic character. The two reconstructions, the (1 x 1)-phase and the ({radical}3 x {radical}3)R30 -phase, are due to silicide formation, as observed in core level spectroscopy. The growth proceeds via island formation in the monolayer regime, while the thicker films show flat layers interrupted by deep holes. On the basis of STM investigations, this growth mode has been attributed to strain due to lattice mismatch between the substrate and the silicide. Co-deposition of Al and Mg onto a Si(111) substrate at low temperature (100K) resulted in the formation of thin alloy films. By varying the relative content of both elements, the thin films exhibited different electronic properties

A case study on better iconographic design in electronic medical records' user interface.

Science.gov (United States)

Tasa, Umut Burcu; Ozcan, Oguzhan; Yantac, Asim Evren; Unluer, Ayca

2008-06-01

It is a known fact that there is a conflict between what users expect and what user interface designers create in the field of medical informatics along with other fields of interface design. The objective of the study is to suggest, from the 'design art' perspective, a method for improving the usability of an electronic medical record (EMR) interface. The suggestion is based on the hypothesis that the user interface of an EMR should be iconographic. The proposed three-step method consists of a questionnaire survey on how hospital users perceive concepts/terms that are going to be used in the EMR user interface. Then icons associated with the terms are designed by a designer, following a guideline which is prepared according to the results of the first questionnaire. Finally the icons are asked back to the target group for proof. A case study was conducted with 64 medical staff and 30 professional designers for the first questionnaire, and with 30 medical staff for the second. In the second questionnaire 7.53 icons out of 10 were matched correctly with a standard deviation of 0.98. Also, all icons except three were matched correctly in at least 83.3% of the forms. The proposed new method differs from the majority of previous studies which are based on user requirements by leaning on user experiments instead. The study demonstrated that the user interface of EMRs should be designed according to a guideline that results from a survey on users' experiences on metaphoric perception of the terms.

Electronic properties of metal-In{sub 2}O{sub 3} interfaces

Energy Technology Data Exchange (ETDEWEB)

Nazarzadehmoafi, Maryam

2017-02-22

The behavior of the electronic properties of as-cleaved melt-grown In{sub 2}O{sub 3} (111) single crystals was studied upon noble metals, In and Sn deposition using angle-resolved photoemission spectroscopy. The stoichiometry, structural quality and crystal orientation, surface morphology, and the electron concentration were examined by energy dispersive X-ray spectroscopy, Laue diffraction, scanning tunneling microscopy (STM), and Hall-effect measurement, respectively. The similarity of the measured-fundamental and surface-band gaps reveals the nearly flat behavior of the bands at the as-cleaved surface of the crystals. Ag and Au/In{sub 2}O{sub 3} interfaces show Schottky behavior, while an ohmic one was observed in Cu, In, and Sn/In{sub 2}O{sub 3} contacts. From agreement of the bulk and surface band gaps, rectifying contact formation as well as the occurrence of photovoltage effect at the pristine surface of the crystals, it can be deduced that SEAL is not an intrinsic property of the as-cleaved surface of the studied crystals. Moreover, for thick Au and Cu overlayer regime at room temperature, Shockley-like surface states were observed. Additionally, the initial stage of Cu and In growth on In{sub 2}O{sub 3} was accompanied by the formation of a two dimensional electron gas (2DEG) fading away for higher coverages which are not associated with the earlier-detected 2DEG at the surface of In{sub 2}O{sub 3} thin films. The application of the Schottky-Mott rule, using in situ-measured work functions of In{sub 2}O{sub 3} and the metals, showed a strong disagreement for all the interfaces except for Ag/In{sub 2}O{sub 3}. The experimental data also disagree with more advanced theories based on the electronegativity concept and metal-induced gap states models.

Electronic and magnetic properties of the Co{sub 2}MnAl/Au interface: Relevance of the Heusler alloy termination

Energy Technology Data Exchange (ETDEWEB)

Makinistian, L., E-mail: lmakinistian@santafe-conicet.gov.ar [Instituto de Física del Litoral (CONICET-UNL), Güemes 3450, 3000 Santa Fe (Argentina); Facultad de Ingeniería, Universidad Nacional de Entre Ríos, 3101 Oro Verde (Argentina); Albanesi, E.A. [Instituto de Física del Litoral (CONICET-UNL), Güemes 3450, 3000 Santa Fe (Argentina); Facultad de Ingeniería, Universidad Nacional de Entre Ríos, 3101 Oro Verde (Argentina)

2015-07-01

We present ab initio calculations of electronic and magnetic properties of the ferromagnetic metal/normal metal (F/N) interface of the Heusler alloy Co{sub 2}MnAl and gold. Two structural models are implemented: one with the ferromagnet slab terminated in a pure cobalt plane (“Co{sub 2}-t”), and the other with it terminated with a plane of MnAl (“MnAl-t”). The relaxed optimum distance between the slabs is determined for the two models before densities of states, magnetic moments, and the electric potential are resolved and analyzed layer by layer through the interface. Complementary, calculations for the free surfaces of gold and the Heusler alloy (for both models, Co{sub 2}-t and MnAl-t) are performed for a better interpretation of the physics of the interface. We predict important differences between the two models, suggesting that both terminations are to be expected to display sensibly different spin injection performances. - Highlights: • Ab initio electronic and magnetic properties of the interface Co{sub 2}MnAl/Au. • Two terminations were studied: Co{sub 2} and MnAl terminated. • The termination of the Heusler alloy sensibly determines the interface properties. • The Co{sub 2} terminated interface displays a higher spin polarization.

Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

Directory of Open Access Journals (Sweden)

Valeri V. Afanas'ev

2014-01-01

Full Text Available Evolution of the electron energy band alignment at interfaces between different semiconductors and wide-gap oxide insulators is examined using the internal photoemission spectroscopy, which is based on observations of optically-induced electron (or hole transitions across the semiconductor/insulator barrier. Interfaces of various semiconductors ranging from the conventional silicon to the high-mobility Ge-based (Ge, Si1-xGex, Ge1-xSnx and AIIIBV group (GaAs, InxGa1-xAs, InAs, GaP, InP, GaSb, InSb materials were studied revealing several general trends in the evolution of band offsets. It is found that in the oxides of metals with cation radii larger than ≈0.7 Å, the oxide valence band top remains nearly at the same energy (±0.2 eV irrespective of the cation sort. Using this result, it becomes possible to predict the interface band alignment between oxides and semiconductors as well as between dissimilar insulating oxides on the basis of the oxide bandgap width which are also affected by crystallization. By contrast, oxides of light elements, for example, Be, Mg, Al, Si, and Sc exhibit significant shifts of the valence band top. General trends in band lineup variations caused by a change in the composition of semiconductor photoemission material are also revealed.

An rf modulated electron gun pulser for linacs

International Nuclear Information System (INIS)

Legg, R.; Hartline, R.

1991-01-01

Present linac injector designs often make use of sub-harmonic prebuncher cavities to properly bunch the electron beam before injection into a buncher and subsequent accelerating cavities. This paper proposes an rf modulated thermionic gun which would allow the sub-harmonic buncher to be eliminated from the injector. The performance parameters for the proposed gun are 120 kV operating voltage, macropulse duration-single pulse mode 2 nsec, multiple pulse mode 100 nsec, rf modularing frequency 500 MHz, charge per micropulse 0.4 nC, macropulse repetition frequency 10 Hz (max). The gun pulser uses a grid modulated planar triode to drive the gun cathode. The grid driver takes advantage of recently developed modular CATV rf drivers, high performance solid state pulser devices, and high-frequency fiber optic transmitters for telecommunications. Design details are presented with associated SPICE runs simulating operation of the gun

Spatially resolved band alignments at Au-hexadecanethiol monolayer-GaAs(001) interfaces by ballistic electron emission microscopy

Energy Technology Data Exchange (ETDEWEB)

Junay, A.; Guézo, S., E-mail: sophie.guezo@univ-rennes1.fr; Turban, P.; Delhaye, G.; Lépine, B.; Tricot, S.; Ababou-Girard, S.; Solal, F. [Département Matériaux-Nanosciences, Institut de Physique de Rennes, UMR 6251, CNRS-Université de Rennes 1, Campus de Beaulieu, Bât 11E, 35042 Rennes Cedex (France)

2015-08-28

We study structural and electronic inhomogeneities in Metal—Organic Molecular monoLayer (OML)—semiconductor interfaces at the sub-nanometer scale by means of in situ Ballistic Electron Emission Microscopy (BEEM). BEEM imaging of Au/1-hexadecanethiols/GaAs(001) heterostructures reveals the evolution of pinholes density as a function of the thickness of the metallic top-contact. Using BEEM in spectroscopic mode in non-short-circuited areas, local electronic fingerprints (barrier height values and corresponding spectral weights) reveal a low-energy tunneling regime through the insulating organic monolayer. At higher energies, BEEM evidences new conduction channels, associated with hot-electron injection in the empty molecular orbitals of the OML. Corresponding band diagrams at buried interfaces can be thus locally described. The energy position of GaAs conduction band minimum in the heterostructure is observed to evolve as a function of the thickness of the deposited metal, and coherently with size-dependent electrostatic effects under the molecular patches. Such BEEM analysis provides a quantitative diagnosis on metallic top-contact formation on organic molecular monolayer and appears as a relevant characterization for its optimization.

Electron distribution in polar heterojunctions within a realistic model

Energy Technology Data Exchange (ETDEWEB)

Tien, Nguyen Thanh, E-mail: thanhtienctu@gmail.com [College of Natural Science, Can Tho University, 3-2 Road, Can Tho City (Viet Nam); Thao, Dinh Nhu [Center for Theoretical and Computational Physics, College of Education, Hue University, 34 Le Loi Street, Hue City (Viet Nam); Thao, Pham Thi Bich [College of Natural Science, Can Tho University, 3-2 Road, Can Tho City (Viet Nam); Quang, Doan Nhat [Institute of Physics, Vietnamese Academy of Science and Technology, 10 Dao Tan Street, Hanoi (Viet Nam)

2015-12-15

We present a theoretical study of the electron distribution, i.e., two-dimensional electron gas (2DEG) in polar heterojunctions (HJs) within a realistic model. The 2DEG is confined along the growth direction by a triangular quantum well with a finite potential barrier and a bent band figured by all confinement sources. Therein, interface polarization charges take a double role: they induce a confining potential and, furthermore, they can make some change in other confinements, e.g., in the Hartree potential from ionized impurities and 2DEG. Confinement by positive interface polarization charges is necessary for the ground state of 2DEG existing at a high sheet density. The 2DEG bulk density is found to be increased in the barrier, so that the scattering occurring in this layer (from interface polarization charges and alloy disorder) becomes paramount in a polar modulation-doped HJ.

Silicon dioxide etching process for fabrication of micro-optics employing pulse-modulated electron-beam-excited plasma

International Nuclear Information System (INIS)

Takeda, Keigo; Ohta, Takayuki; Ito, Masafumi; Hori, Masaru

2006-01-01

Silicon dioxide etching process employing a pulse-modulated electron-beam-excited plasma (EBEP) has been developed for a fabrication process of optical micro-electro-mechanical systems (MEMSs). Nonplanar dielectric materials were etched by using self-bias induced by the electron beam generating the plasma. In order to investigate the effect of pulse modulation on electron beam, plasma diagnostics were carried out in the EBEP employing C 4 F 8 gas diluted with Ar gas by using a Langmuir single probe and time resolved optical emission spectroscopy. It was found that the pulse-modulated EBEP has an excellent potential to reduce the plasma-induced thermal damage on a photoresist film on a substrate to get the uniform etching and the anisotropic SiO 2 etching in comparison with the conventional EBEP. The pulse-modulated EBEP enabled us to get the high etch rate of SiO 2 of 375 nm/min without any additional bias power supply. Furthermore, the microfabrication on the core area of optical fiber was realized. These results indicate that the pulse-modulated EBEP will be a powerful tool for the application to optical MEMS process

Investigation of Thermal Interface Materials Using Phase-Sensitive Transient Thermoreflectance Technique: Preprint

Energy Technology Data Exchange (ETDEWEB)

Feng, X.; King, C.; DeVoto, D.; Mihalic, M.; Narumanchi, S.

2014-08-01

With increasing power density in electronics packages/modules, thermal resistances at multiple interfaces are a bottleneck to efficient heat removal from the package. In this work, the performance of thermal interface materials such as grease, thermoplastic adhesives and diffusion-bonded interfaces are characterized using the phase-sensitive transient thermoreflectance technique. A multi-layer heat conduction model was constructed and theoretical solutions were derived to obtain the relation between phase lag and the thermal/physical properties. This technique enables simultaneous extraction of the contact resistance and bulk thermal conductivity of the TIMs. With the measurements, the bulk thermal conductivity of Dow TC-5022 thermal grease (70 to 75 um bondline thickness) was 3 to 5 W/(m-K) and the contact resistance was 5 to 10 mm2-K/W. For the Btech thermoplastic material (45 to 80 μm bondline thickness), the bulk thermal conductivity was 20 to 50 W/(m-K) and the contact resistance was 2 to 5 mm2-K/W. Measurements were also conducted to quantify the thermal performance of diffusion-bonded interface for power electronics applications. Results with the diffusion-bonded sample showed that the interfacial thermal resistance is more than one order of magnitude lower than those of traditional TIMs, suggesting potential pathways to efficient thermal management.

Effect of EHR User Interface Changes on Internal Prescription Discrepancies

Science.gov (United States)

Sawarkar, A.; Dementieva, Y.A.; Breydo, E.; Ramelson, H.

2014-01-01

Summary Objective To determine whether specific design interventions (changes in the user interface (UI)) of an electronic health record (EHR) medication module are associated with an increase or decrease in the incidence of contradictions between the structured and narrative components of electronic prescriptions (internal prescription discrepancies). Materials and Methods We performed a retrospective analysis of 960,000 randomly selected electronic prescriptions generated in a single EHR between 01/2004 and 12/2011. Internal prescription discrepancies were identified using a validated natural language processing tool with recall of 76% and precision of 84%. A multivariable autoregressive integrated moving average (ARIMA) model was used to evaluate the effect of five UI changes in the EHR medication module on incidence of internal prescription discrepancies. Results Over the study period 175,725 (18.4%) prescriptions were found to have internal discrepancies. The highest rate of prescription discrepancies was observed in March 2006 (22.5%) and the lowest in March 2009 (15.0%). Addition of „as directed“ option to the dropdown decreased prescription discrepancies by 195 / month (p = 0.0004). An non-interruptive alert that reminded providers to ensure that structured and narrative components did not contradict each other decreased prescription discrepancies by 145 / month (p = 0.03). Addition of a „Renew / Sign“ button to the Medication module (a negative control) did not have an effect in prescription discrepancies. Conclusions Several UI changes in the electronic medication module were effective in reducing the incidence of internal prescription discrepancies. Further research is needed to identify interventions that can completely eliminate this type of prescription error and their effects on patient outcomes. PMID:25298811

Electronic structures and stability of Ni/Bi2Te3 and Co/Bi2Te3 interfaces

KAUST Repository

Xiong, Ka; Wang, Weichao; Alshareef, Husam N.; Gupta, Rahul P.; White, John B.; Gnade, Bruce E.; Cho, Kyeongjae

2010-01-01

We investigate the electronic structures and stability for Ni/Bi 2Te3, NiTe/Bi2Te3, Co/Bi 2Te3 and CoTe2/Bi2Te3 interfaces by first-principles calculations. It is found that the surface termination strongly affects the band alignment. Ni and Co are found to form Ohmic contacts to Bi2Te3. The interface formation energy for Co/Bi2Te3 interfaces is much lower than that of Ni/Bi2Te3 interfaces. Furthermore, we found that NiTe on Bi2Te3 is more stable than Ni, while the formation energies for Co and CoTe2 on Bi2Te3 are comparable. © 2010 IOP Publishing Ltd.

Electronic structures and stability of Ni/Bi2Te3 and Co/Bi2Te3 interfaces

KAUST Repository

Xiong, Ka

2010-03-04

We investigate the electronic structures and stability for Ni/Bi 2Te3, NiTe/Bi2Te3, Co/Bi 2Te3 and CoTe2/Bi2Te3 interfaces by first-principles calculations. It is found that the surface termination strongly affects the band alignment. Ni and Co are found to form Ohmic contacts to Bi2Te3. The interface formation energy for Co/Bi2Te3 interfaces is much lower than that of Ni/Bi2Te3 interfaces. Furthermore, we found that NiTe on Bi2Te3 is more stable than Ni, while the formation energies for Co and CoTe2 on Bi2Te3 are comparable. © 2010 IOP Publishing Ltd.

Design of Electronic Medical Record User Interfaces: A Matrix-Based Method for Improving Usability

Directory of Open Access Journals (Sweden)

Kushtrim Kuqi

2013-01-01

Full Text Available This study examines a new approach of using the Design Structure Matrix (DSM modeling technique to improve the design of Electronic Medical Record (EMR user interfaces. The usability of an EMR medication dosage calculator used for placing orders in an academic hospital setting was investigated. The proposed method captures and analyzes the interactions between user interface elements of the EMR system and groups elements based on information exchange, spatial adjacency, and similarity to improve screen density and time-on-task. Medication dose adjustment task time was recorded for the existing and new designs using a cognitive simulation model that predicts user performance. We estimate that the design improvement could reduce time-on-task by saving an average of 21 hours of hospital physicians’ time over the course of a month. The study suggests that the application of DSM can improve the usability of an EMR user interface.

An FPGA-Based Electronic Cochlea

Directory of Open Access Journals (Sweden)

M. P. Leong

2003-06-01

Full Text Available A module generator which can produce an FPGA-based implementation of an electronic cochlea filter with arbitrary precision is presented. Although hardware implementations of electronic cochlea models have traditionally used analog VLSI as the implementation medium due to their small area, high speed, and low power consumption, FPGA-based implementations offer shorter design times, improved dynamic range, higher accuracy, and a simpler computer interface. The tool presented takes filter coefficients as input and produces a synthesizable VHDL description of an application-optimized design as output. Furthermore, the tool can use simulation test vectors in order to determine the appropriate scaling of the fixed point precision parameters for each filter. The resulting model can be used as an accelerator for research in audition or as the front-end for embedded auditory signal processing systems. The application of this module generator to a real-time cochleagram display is also presented.

Impurity effects in two-electron coupled quantum dots: entanglement modulation

International Nuclear Information System (INIS)

Acosta Coden, Diego S; Romero, Rodolfo H; Ferrón, Alejandro; Gomez, Sergio S

2013-01-01

We present a detailed analysis of the electronic and optical properties of two-electron quantum dots with a two-dimensional Gaussian confinement potential. We study the effects of Coulomb impurities and the possibility of manipulating the entanglement of the electrons by controlling the confinement potential parameters. The degree of entanglement becomes highly modulated by both the location and charge screening of the impurity atom, resulting in two regimes: one of low entanglement and the other of high entanglement, with both of them mainly determined by the magnitude of the charge. It is shown that the magnitude of the oscillator strength of the system could provide an indication of the presence and characteristics of impurities and, therefore, the degree of entanglement. (paper)

Electronic Resources Management System: Recommendation Report 2017

KAUST Repository

Ramli, Rindra M.

2017-05-01

This recommendation report provides an overview of the selection process for the new Electronic Resources Management System. The library has decided to move away from Innovative Interfaces Millennium ERM module. The library reviewed 3 system as potential replacements namely: Proquest 360 Resource Manager, Ex Libris Alma and Open Source CORAL ERMS. After comparing and trialling the systems, it was decided to go for Proquest 360 Resource Manager.

Short-Circuit Robustness Assessment in Power Electronic Modules for Megawatt Applications

DEFF Research Database (Denmark)

Iannuzzo, Francesco

2016-01-01

In this paper, threats and opportunities in testing of megawatt power electronic modules under short circuit are presented and discussed, together with the introduction of some basic principles of non-destructive testing, a key technique to allow post-failure analysis. The non-destructive testing...

Design and construction of tetrode tube modulator for high power electron accelerator

Directory of Open Access Journals (Sweden)

A M Poursaleh

2015-09-01

Full Text Available In this paper, a high power tetrode tube (TH781-200kW, cw modulator is designed and implemented. This modulator is used for a part of RF system of the first Iranian high power electron accelerator project with similar structure to Rhodotron accelerator. Regarding to the level of sensitive and importance of TH781 tube the modulator system designed with high accuracy. So beside of power supplies design the control circuits for protection of the tube have been considered. The results of test and operation of this system that have been constructed in Iran for fist time is very satisfactory

Synchrotron-based photoemission study of electronic structure of the Cs/GaN ultrathin interface

Science.gov (United States)

Benemanskaya, G. V.; Kukushkin, S. A.; Dementev, P. A.; Lapushkin, M. N.; Timoshnev, S. N.; Smirnov, D. V.

2018-03-01

Electronic structure of the Cs/n-GaN nano-interface has been studied in situ via synchrotron-based photoelectron spectroscopy by excitation in the energy range of 70-400 eV. The GaN sample was grown by an original method of epitaxy of low-defect unstressed nanoscaled films on AlGaN/SiC/Si substrate. Changes in the surface state spectra and in the Ga 3d, Cs 4d, Cs 5p, N 1s core level spectra have been revealed under different cesium coverages. The intrinsic surface states for the clean GaN surface at binding energies of ∼5.0 eV and ∼7.0 eV are attenuated during Cs adsorption. Simultaneously three Cs induced surface states are found to arise. Drastic changes in the surface state spectrum were ascertained and shown to be originated from the local interacting Ga dangling bonds and adsorbed Cs atoms initiating the electron redistribution effect with formation of the semiconductor-like Cs/n-GaN interface.

Semantic modeling and structural synthesis of onboard electronics protection means as open information system

Science.gov (United States)

Zhevnerchuk, D. V.; Surkova, A. S.; Lomakina, L. S.; Golubev, A. S.

2018-05-01

The article describes the component representation approach and semantic models of on-board electronics protection from ionizing radiation of various nature. Semantic models are constructed, the feature of which is the representation of electronic elements, protection modules, sources of impact in the form of blocks with interfaces. The rules of logical inference and algorithms for synthesizing the object properties of the semantic network, imitating the interface between the components of the protection system and the sources of radiation, are developed. The results of the algorithm are considered using the example of radiation-resistant microcircuits 1645RU5U, 1645RT2U and the calculation and experimental method for estimating the durability of on-board electronics.

Effect of interfaces on electron transport properties of MoS2-Au Contacts

Science.gov (United States)

Aminpour, Maral; Hapala, Prokop; Le, Duy; Jelinek, Pavel; Rahman, Talat S.; Rahman's Group Collaboration; Nanosurf Lab Collaboration

2014-03-01

Single layer MoS2 is a promising material for future electronic devices such as transistors since it has good transport characteristics with mobility greater than 200 cm-1V-1s-1 and on-off current ratios up to 108. However, before MoS2 can become a mainstream electronic material for the semiconductor industry, the design of low resistive metal-semiconductor junctions as contacts of the electronic devices needs to be addressed and studied systematically. We have examined the effect of Au contacts on the electronic transport properties of single layer MoS2 using density functional theory in combination with the non-equilibrium Green's function method. The Schottky barrier between Au contact and MoS2, transmission spectra, and I-V curves will be reported and discussed as a function of MoS2 and Au interfaces of varying geometry. This work is supported in part by the US Department of Energy under grant DE-FG02-07ER15842.

Rabi oscillation and electron-spin-echo envelope modulation of the photoexcited triplet spin system in silicon

Science.gov (United States)

Akhtar, Waseem; Sekiguchi, Takeharu; Itahashi, Tatsumasa; Filidou, Vasileia; Morton, John J. L.; Vlasenko, Leonid; Itoh, Kohei M.

2012-09-01

We report on a pulsed electron paramagnetic resonance (EPR) study of the photoexcited triplet state (S=1) of oxygen-vacancy centers in silicon. Rabi oscillations between the triplet sublevels are observed using coherent manipulation with a resonant microwave pulse. The Hahn echo and stimulated echo decay profiles are superimposed with strong modulations known as electron-spin-echo envelope modulation (ESEEM). The ESEEM spectra reveal a weak but anisotropic hyperfine coupling between the triplet electron spin and a 29Si nuclear spin (I=1/2) residing at a nearby lattice site, that cannot be resolved in conventional field-swept EPR spectra.

Direct Observations of ULF and Whistler-Mode Chorus Modulation of 500eV EDI Electrons by MMS

Science.gov (United States)

Paulson, K. W.; Argall, M. R.; Ahmadi, N.; Torbert, R. B.; Le Contel, O.; Ergun, R.; Khotyaintsev, Y. V.; Strangeway, R. J.; Magnes, W.; Russell, C. T.

2016-12-01

We present here direct observations of chorus-wave modulated field-aligned 500 eV electrons using the Electron Drift Instrument (EDI) on board the Magnetospheric Multiscale mission. These periods of wave activity were additionally observed to be modulated by Pc5-frequency magnetic perturbations, some of which have been identified as drifting mirror-mode structures. The spacecraft encountered these mirror-mode structures just inside of the duskside magnetopause. Using the high sampling rate provided by EDI in burst sampling mode, we are able to observe the individual count fluctuations of field-aligned electrons in this region up to 512 Hz. We use the multiple look directions of EDI to generate both pitch angle and gyrophase plots of the fluctuating counts. Our observations often show unidirectional flow of these modulated electrons along the background field, and in some cases demonstrate gyrophase bunching in the wave region.

Modulation of the adsorption properties at air-water interfaces of complexes of egg white ovalbumin with pectin by the dielectric constant

NARCIS (Netherlands)

Kudryashova, E.V.; Jongh, H.H.J.de

2008-01-01

The possibility of modulating the mesoscopic properties of food colloidal systems by the dielectric constant is studied by determining the impact of small amounts of ethanol (10%) on the adsorption of egg white ovalbumin onto the air-water interface in the absence and presence of pectin. The

Interfacing CAMAC instrumentation to the USB port

International Nuclear Information System (INIS)

Ribas, R.V.

2010-01-01

Full text. CAMAC instrumentation like ADCs, TDCs, scalers, etc. are still very useful in data acquisition system for low energy nuclear physics. Since the popularity of this norm decreased strongly in the last 10-15 years, most of the interfaces of the CAMAC crate controller to micro computers are no longer available in modern computers (ISA slots, GPIB boards, etc.). Also, the CAMAC crate is a quite a heavy and noisy unit, that is completely inadequate if only 2-3 CAMAC modules are used in the crate. In order to have portable and simple interface to personal computers, we are developing an interface board that can accommodate up to four CAMAC modules to the USB port. The interface includes a micro controller to handle the trigger signals, CAMAC operations, event formatting and data transfer to the computer. The first version of the interface is limited for two specific modules we have in our laboratory (an Ortec AD811 8x2048 channels ADC and a LeCroy 2228A 8x2048 channels TDC). A small power supply is included in the system, making it quite low weight and portable. Typically it is spent to process each CAMAC read operation and about half this time to dataless operations. More about the performance of this board will be presented. A new interface, capable of handling four CAMAC units is now being planned. The new project will be able to handle virtually any kind of CAMAC module. A CAMAC crate controller based in these boards will also be developed. (author)

Interfacing CAMAC instrumentation to the USB port

Energy Technology Data Exchange (ETDEWEB)

Ribas, R.V. [Universidade de Sao Paulo (IF/USP), SP (Brazil). Inst. de Fisica

2010-07-01

Full text. CAMAC instrumentation like ADCs, TDCs, scalers, etc. are still very useful in data acquisition system for low energy nuclear physics. Since the popularity of this norm decreased strongly in the last 10-15 years, most of the interfaces of the CAMAC crate controller to micro computers are no longer available in modern computers (ISA slots, GPIB boards, etc.). Also, the CAMAC crate is a quite a heavy and noisy unit, that is completely inadequate if only 2-3 CAMAC modules are used in the crate. In order to have portable and simple interface to personal computers, we are developing an interface board that can accommodate up to four CAMAC modules to the USB port. The interface includes a micro controller to handle the trigger signals, CAMAC operations, event formatting and data transfer to the computer. The first version of the interface is limited for two specific modules we have in our laboratory (an Ortec AD811 8x2048 channels ADC and a LeCroy 2228A 8x2048 channels TDC). A small power supply is included in the system, making it quite low weight and portable. Typically it is spent to process each CAMAC read operation and about half this time to dataless operations. More about the performance of this board will be presented. A new interface, capable of handling four CAMAC units is now being planned. The new project will be able to handle virtually any kind of CAMAC module. A CAMAC crate controller based in these boards will also be developed. (author)

Effect of Single-Electron Interface Trapping in Decanano MOSFETs: A 3D Atomistic Simulation Study

Science.gov (United States)

Asenov, Asen; Balasubramaniam, R.; Brown, A. R.; Davies, J. H.

2000-01-01

We study the effect of trapping/detrapping of a single-electron in interface states in the channel of n-type MOSFETs with decanano dimensions using 3D atomistic simulation techniques. In order to highlight the basic dependencies, the simulations are carried out initially assuming continuous doping charge, and discrete localized charge only for the trapped electron. The dependence of the random telegraph signal (RTS) amplitudes on the device dimensions and on the position of the trapped charge in the channel are studied in detail. Later, in full-scale, atomistic simulations assuming discrete charge for both randomly placed dopants and the trapped electron, we highlight the importance of current percolation and of traps with strategic position where the trapped electron blocks a dominant current path.

Electronic and Mechanical Properties of GrapheneGermanium Interfaces Grown by Chemical Vapor Deposition

Science.gov (United States)

2015-10-27

that graphene acts as a diffusion barrier to ambient contaminants, as similarly prepared bare Ge exposed to ambient conditions possesses a much...in-plane order underneath the graphene (Figure 1b,f). The stabilization of Ge terraces with half-step heights indicates that the graphene modifies the...Electronic and Mechanical Properties of Graphene −Germanium Interfaces Grown by Chemical Vapor Deposition Brian Kiraly,†,‡ Robert M. Jacobberger

Overview of CMS robotic silicon module assembly hardware based on Aerotech Gantry Positioning system.

CERN Multimedia

Honma, Alan

1999-01-01

The goal of the robotic silicon module assembly pilot project is to fully automate the gluing and pick and placement of silicon sensors and front-end hybrid onto a carbon-fibre frame. The basis for thesystem is the Aerotech Gantry Positioning System (AGS10000) machineshown in the centre of the picture. To the left is the PC which contains the controller card and runs the user interface. To the rightis the rack of associated electronics which interfaces with the CERNbuilt tooling and vacuum chuck system.

Buried interfaces - A systematic study to characterize an adhesive interface at multiple scales

Science.gov (United States)

Haubrich, Jan; Löbbecke, Miriam; Watermeyer, Philipp; Wilde, Fabian; Requena, Guillermo; da Silva, Julio

2018-03-01

A comparative study of a model adhesive interface formed between laser-pretreated Ti15-3-3-3 and the thermoplastic polymer PEEK has been carried out in order to characterize the interfaces' structural details and the infiltration of the surface nano-oxide by the polymer at multiple scales. Destructive approaches such as scanning and transmission electron microscopy of microsections prepared by focused ion beam, and non-destructive imaging approaches including laser scanning and scanning electron microscopy of pretreated surfaces as well as synchrotron computed tomography techniques (micro- and ptychographic tomographies) were employed for resolving the large, μm-sized melt-structures and the fine nano-oxide substructure within the buried interface. Scanning electron microscopy showed that the fine, open-porous nano-oxide homogeneously covers the larger macrostructure features which in turn cover the joint surface. The open-porous nano-oxide forming the interface itself appears to be fully infiltrated and wetted by the polymer. No voids or even channels were detected down to the respective resolution limits of scanning and transmission electron microscopy.

Power Electronics as Efficient Interface of Renewable Energy Sources

DEFF Research Database (Denmark)

Blaabjerg, Frede; Chen, Zhe; Kjær, Søren Bækhøj

2004-01-01

The global electrical energy consumption is steadily rising and consequently there is a demand to increase the power generation capacity. A significant percentage of the required capacity increase can be based on renewable energy sources. Wind turbine technology, as the most cost effective...... renewable energy conversion system, will play an important part in our future energy supply. But other sources like microturbines, photovoltaics and fuel cell systems may also be serious contributor to the power supply. Characteristically, power electronics will be an efficient and important interface...... to the grid and this paper will first briefly discuss three different alternative/ renewable energy sources. Next, various configurations of the wind turbine technology are presented, as this technology seems to be most developed and cost-effective. Finally, the developments and requirements from the grid...

Electron Energy Resolution of the ATLAS TILECAL Modules with Flat Filter Method (July 2002 test beam)

CERN Document Server

Kulchitskii, Yu A; Vinogradov, V B

2005-01-01

The constructed ATLAS detector at the LHC will have the great physics discovery potential, in particular in the detection of a heavy Higgs boson. Calorimeters will play a crucial role in it. It is necessary to have confidence that the calorimeters will perform as expected. With the aim of understanding of performance of the ATLAS Tile hadronic calorimeter to electrons 12\\% of modules have been exposed in electron beams with various energies by three possible ways: cell-scan at $\\theta =20^o$ at the centers of the front face cells, $\\eta$-scan and tilerow scan at $\\theta = 90^o$ for the module side cells. We have extracted the electron energy resolutions of the $EBM-$ (ANL-44), $EBM+$ (IFA-42) and $BM$ (JINR-55) Modules of the ATLAS Tile Calorimeter at energies E = 10, 20, 50, 100 and 180 GeV and $\\theta = 20^o$ and $90^o $ and $\\eta$ scan from the July 2002 testbeam run data using the flat filter method of the PMT signal reconstruction. We have determined the statistical and constant terms for the electron en...

Electron Energy Resolution of the ATLAS TILECAL Modules with Fit Filter Method (July 2002 test beam)

CERN Document Server

Kulchitskii, Yu A; Vinogradov, V B

2006-01-01

The constructed ATLAS detector at the LHC will have the great physics discovery potential, in particular in the detection of a heavy Higgs boson. Calorimeters will play a crucial role in it. It is necessary to have confidence that the calorimeters will perform as expected. With the aim of understanding of performance of the ATLAS Tile hadronic calorimeter to electrons 12\\% of modules have been exposed in electron beams with various energies by three possible ways: cell-scan at $\\theta =20^o$ at the centers of the front face cells, $\\eta$-scan and tilerow scan at $\\theta = 90^o$ for the module side cells. We have extracted the electron energy resolutions of the $EBM-$ (ANL-44), $EBM+$ (IFA-42) and $BM$ (JINR-55) Modules of the ATLAS Tile Calorimeter at energies E = 10, 20, 50, 100 and 180 GeV and $\\theta = 20^o$ and $90^o $ and $\\eta$ scan from the July 2002 testbeam run data using the fit filter method of the PMT signal reconstruction. We have determined the statistical and constant terms for the electron ene...

Transverse velocity modulator and generator schemes based on non-collinear radiation and electron beams

CERN Document Server

Varfolomeev, A A

2000-01-01

New non-collinear schemes are suggested for transverse velocity modulation of electron beams and for the generation of coherent spontaneous radiation by these transversely modulated beams. It is shown that due to the non-collinearity some orders of magnitude enhancement can be achieved for the coherent spontaneous radiation (CSR) power at both the fundamental and harmonic frequencies.

Application of high power modulated intense relativistic electron beams for development of Wake Field Accelerator

International Nuclear Information System (INIS)

Friedman, M.

1989-01-01

This final Progress Report addresses DOE-sponsored research on the development of future high-gradient particle accelerators. The experimental and the theoretical research, which lasted three years, investigated the Two Beam Accelerator (TBA). This high-voltage-gradient accelerator was powered by a modulated intense relativistic electron beam (MIREB) of power >10 10 watts. This research was conceived after a series of successful experiments performed at NRL generating and using MIREBs. This work showed that an RF structure could be built which was directly powered by a modulated intense relativistic electron beam. This structure was then used to accelerate a second electron beam. At the end of the three year project the proof-of-principle accelerator demonstrated the generation of a high current beam of electrons with energy >60 MeV. Scaling laws needed to design practical devices for future applications were also derived

User interface design of electronic appliances

CERN Document Server

Baumann, Konrad

2002-01-01

Foreword by Brenda Laurel. Part One: Introduction 1. Background, Bruce Thomas 2. Introduction, Konrad Baumann 3. The Interaction Design Process, Georg Rakers Part Two: User Interface Design 4. Creativity Techniques, Irene Mavrommati 5. Design Principals, Irene Mavrommati and Adrian Martel 6. Design of On-Screen Interfaces, Irene Mavrommati Part Three: Input Devices 7. Controls, Konrad Baumann 8. Keyboards, Konrad Baumann 9. Advanced Interaction Techniques, Christopher Baber and Konrad Baumann 10. Speech Control, Christopher Baber and Jan Noyes 11. Wearable Computers, Christopher Baber Part Fou

The role of transition metal interfaces on the electronic transport in lithium–air batteries

DEFF Research Database (Denmark)

Chen, Jingzhe; Hummelshøj, Jens S.; Thygesen, Kristian Sommer

2011-01-01

Low electronic conduction is expected to be a main limiting factor in the performance of reversible lithium–air, Li–O2, batteries. Here, we apply density functional theory and non-equilibrium Green's function calculations to determine the electronic transport through lithium peroxide, Li2O2, formed...... at the cathode during battery discharge. We find the transport to depend on the orientation and lattice matching of the insulator–metal interface in the presence of Au and Pt catalysts. Bulk lithium vacancies are found to be available and mobile under battery charging conditions, and found to pin the Fermi level...

Electronic structure evolution and energy level alignment at C60/4,4'-cyclohexylidenebis[N,N-bis(4-methylphenyl) benzenamine]/MoOx/indium tin oxide interfaces

Science.gov (United States)

Liu, Xiaoliang; Yi, Shijuan; Wang, Chenggong; Wang, Congcong; Gao, Yongli

2014-04-01

The electronic structure evolution and energy level alignment have been investigated at interfaces comprising fullerene (C60)/4,4'-cyclohexylidenebis[N,N-bis(4-methylphenyl) benzenamine] (TAPC)/ molybdenum oxide (MoOx)/ indium tin oxide with ultraviolet photoemission spectroscopy and inverse photoemission spectroscopy. With deposition of TAPC upon MoOx, a dipole of 1.58 eV was formed at the TAPC/MoOx interface due to electron transfer from TAPC to MoOx. The highest occupied molecular orbital (HOMO) onset of TAPC was pinned closed to the Fermi level, leading to a p-doped region and thus increasing the carrier concentration at the very interface. The downward band bending and the resulting built-in field in TAPC were favorable for the hole transfer toward the TAPC/MoOx interface. The rigid downward shift of energy levels of TAPC indicated no significant interface chemistry at the interface. With subsequent deposition of C60 on TAPC, a dipole of 0.27 eV was observed at the C60/TAPC heterojunction due to the electron transfer from TAPC to C60. This led to a drop of the HOMO of TAPC near the C60/TAPC interface, and hence further enhanced the band bending in TAPC. The band bending behavior was also observed in C60, similarly creating a built-in field in C60 film and improving the electron transfer away from the C60/TAPC interface. It can be deduced from the interface analysis that a promising maximum open circuit voltage of 1.5 eV is achievable in C60/TAPC-based organic photovoltaic cells.

Ripple-modulated electronic structure of a 3D topological insulator.

Science.gov (United States)

Okada, Yoshinori; Zhou, Wenwen; Walkup, D; Dhital, Chetan; Wilson, Stephen D; Madhavan, V

2012-01-01

Three-dimensional topological insulators host linearly dispersing states with unique properties and a strong potential for applications. An important ingredient in realizing some of the more exotic states in topological insulators is the ability to manipulate local electronic properties. Direct analogy to the Dirac material graphene suggests that a possible avenue for controlling local properties is via a controlled structural deformation such as the formation of ripples. However, the influence of such ripples on topological insulators is yet to be explored. Here we use scanning tunnelling microscopy to determine the effects of one-dimensional buckling on the electronic properties of Bi(2)Te(3.) By tracking spatial variations of the interference patterns generated by the Dirac electrons we show that buckling imposes a periodic potential, which locally modulates the surface-state dispersion. This suggests that forming one- and two-dimensional ripples is a viable method for creating nanoscale potential landscapes that can be used to control the properties of Dirac electrons in topological insulators.

Capillary-wave dynamics and interface structure modulation in binary Bose-Einstein condensate mixtures

Science.gov (United States)

Indekeu, Joseph O.; Van Thu, Nguyen; Lin, Chang-You; Phat, Tran Huu

2018-04-01

The localized low-energy interfacial excitations, or interfacial Nambu-Goldstone modes, of phase-segregated binary mixtures of Bose-Einstein condensates are investigated analytically. To this end a double-parabola approximation (DPA) is performed on the Lagrangian density in Gross-Pitaevskii theory for a system in a uniform potential. This DPA entails a model in which analytic expressions are obtained for the excitations underlying capillary waves or ripplons for arbitrary strength K (>1 ) of the phase segregation. The dispersion relation ω (k ) ∝k3 /2 is derived directly from the Bogoliubov-de Gennes equations in the limit that the wavelength 2 π /k is much larger than the interface width. The proportionality constant in the dispersion relation provides the static interfacial tension. A correction term in ω (k ) of order k5 /2 is calculated analytically within the DPA model. The combined result is tested against numerical diagonalization of the exact Bogoliubov-de Gennes equations. Satisfactory agreement is obtained in the range of physically relevant wavelengths. The ripplon dispersion relation is relevant to state-of-the-art experiments using (quasi)uniform optical-box traps. Furthermore, within the DPA model explicit expressions are obtained for the structural deformation of the interface due to the passing of the capillary wave. It is found that the amplitude of the wave is enhanced by an amount that is quadratic in the ratio of the phase velocity ω /k to the sound velocity c . For generic mixtures consisting of condensates with unequal healing lengths, an additional modulation is predicted of the common value of the condensate densities at the interface.

Coherent infrared radiation from the ALS generated via femtosecond laser modulation of the electron beam

International Nuclear Information System (INIS)

Byrd, J.M.; Hao, Z.; Martin, M.C.; Robin, D.S.; Sannibale, F.; Schoenlein, R.W.; Venturini, M.; Zholents, A.A.; Zolotorev, M.S.

2004-01-01

Interaction of an electron beam with a femtosecond laser pulse co-propagating through a wiggler at the ALS produces large modulation of the electron energies within a short ∼100 fs slice of the electron bunch. Propagating around the storage ring, this bunch develops a longitudinal density perturbation due to the dispersion of electron trajectories. The length of the perturbation evolves with a distance from the wiggler but is much shorter than the electron bunch length. This perturbation causes the electron bunch to emit short pulses of temporally and spatially coherent infrared light which are automatically synchronized to the modulating laser. The intensity and spectra of the infrared light were measured in two storage ring locations for a nominal ALS lattice and for an experimental lattice with the higher momentum compaction factor. The onset of instability stimulated by laser e-beam interaction had been discovered. The infrared signal is now routinely used as a sensitive monitor for a fine tuning of the laser beam alignment during data accumulation in the experiments with femtosecond x-ray pulses

Surface and interface effects in VLSI

CERN Document Server

Einspruch, Norman G

1985-01-01

VLSI Electronics Microstructure Science, Volume 10: Surface and Interface Effects in VLSI provides the advances made in the science of semiconductor surface and interface as they relate to electronics. This volume aims to provide a better understanding and control of surface and interface related properties. The book begins with an introductory chapter on the intimate link between interfaces and devices. The book is then divided into two parts. The first part covers the chemical and geometric structures of prototypical VLSI interfaces. Subjects detailed include, the technologically most import

Low energy electron diffraction (LEED) and sum frequency generation (SFG) vibrational spectroscopy studies of solid-vacuum, solid-air and solid-liquid interfaces

Energy Technology Data Exchange (ETDEWEB)

Hoffer, Saskia [Univ. of California, Berkeley, CA (United States)

2002-01-01

Electron based surface probing techniques can provide detailed information about surface structure or chemical composition in vacuum environments. The development of new surface techniques has made possible in situ molecular level studies of solid-gas interfaces and more recently, solid-liquid interfaces. The aim of this dissertation is two-fold. First, by using novel sample preparation, Low Energy Electron Diffraction (LEED) and other traditional ultra high vacuum (UHV) techniques are shown to provide new information on the insulator/vacuum interface. The surface structure of the classic insulator NaCl has been determined using these methods. Second, using sum frequency generation (SFG) surface specific vibrational spectroscopy studies were performed on both the biopolymer/air and electrode/electrolyte interfaces. The surface structure and composition of polyetherurethane-silicone copolymers were determined in air using SFG, atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). SFG studies of the electrode (platinum, gold and copper)/electrolyte interface were performed as a function of applied potential in an electrochemical cell.

Development of a multi-channel front-end electronics module based on ASIC for silicon strip array detectors

International Nuclear Information System (INIS)

Zhao Xingwen; Yan Duo; Su Hong; Qian Yi; Kong Jie; Zhang Xueheng; Li Zhankui; Li Haixia

2014-01-01

The silicon strip array detector is one of external target facility subsystems in the Cooling Storage Ring on the Heavy Ion Research Facility at Lanzhou (HIRFL-CSR). Using the ASICs, the front-end electronics module has been developed for the silicon strip array detectors and can implement measurement of energy of 96 channels. The performance of the front-end electronics module has been tested. The energy linearity of the front-end electronics module is better than 0.3% for the dynamic range of 0.1∼0.7 V. The energy resolution is better than 0.45%. The maximum channel crosstalk is better than 10%. The channel consistency is better than 1.3%. After continuously working for 24 h at room temperature, the maximum drift of the zero-peak is 1.48 mV. (authors)

Weak localization and electron-electron interaction in modulation doped GaAs/AlGaAs heterostructures

International Nuclear Information System (INIS)

Taboryski, R.; Lindelof, P.E.

1990-01-01

The first heterostructure wafer only had one electronic subband at the GaAs/AlGaAs interface populated. Weak localization magnetoresistance was interpreted by a theory valid to relatively high magnetic fields and also valid for electrons with a long mean free path. The adjustable parameter in fitting the magnetoresistance was in each case the phasebreaking relaxation time, which could then subsequently be plotted as a function of temperature. The temperature dependence of the phasebreaking rate could be interpreted on the basic of existing theories, but the residual relaxation rate at the lowest temperature remains so far unexplained. Already at low magnetic fields the weak localization magnetoresistance saturates, indicating a complete quench of weak localization. We find that the value of saturation (i.e. the total weak localization at the appropriate temperature) was smaller than predicted by the existing theories. At magnetic fields of the order of the inverse electron mobility, a quadratic magnetoresistance show up in our experiments. This quadratic magnetoresistance corresponds to corrections to the conductivity of the order of e 2 /h. Whereas we find that the temperature dependence of this conductivity correction is well in agreement with predicted effects of electron-electron interaction, the dependence on mobility, which we can measure via our ion implantation, is larger than any existing theory predicts, yet still in the ballpark of the conductance quantum. (orig./BHO)

Energy modulation of nonrelativistic electrons with a CO2 laser using a metal microslit

OpenAIRE

Jongsuck, Bae; Ryo, Ishikawa; Sumio, Okuyama; Takashi, Miyajima; Taiji, Akizuki; Tatsuya, Okamoto; Koji, Mizuno

2000-01-01

A metal microslit has been used as an interaction circuit between a CO2 laser beam and nonrelativistic free electrons. Evanescent waves which are induced on the slit by illumination of the laser light modulate the energy of electrons passing close to the surface of the slit. The electron-energy change of more than ±5 eV for the 80 keV electron beam has been observed using the 7 kW laser beam at the wavelength of 10.6 μm.

Energy modulation of nonrelativistic electrons with a CO2 laser using a metal microslit

Science.gov (United States)

Bae, Jongsuck; Ishikawa, Ryo; Okuyama, Sumio; Miyajima, Takashi; Akizuki, Taiji; Okamoto, Tatsuya; Mizuno, Koji

2000-04-01

A metal microslit has been used as an interaction circuit between a CO2 laser beam and nonrelativistic free electrons. Evanescent waves which are induced on the slit by illumination of the laser light modulate the energy of electrons passing close to the surface of the slit. The electron-energy change of more than ±5 eV for the 80 keV electron beam has been observed using the 7 kW laser beam at the wavelength of 10.6 μm.

Energy modulation of nonrelativistic electrons in an optical near field on a metal microslit

OpenAIRE

R., Ishikawa; Jongsuck, Bae; K., Mizuno

2001-01-01

Energy modulation of nonrelativistic electrons with a laser beam using a metal microslit as an interaction circuit has been investigated. An optical near field is induced in the proximity of the microslit by illumination of the laser beam. The electrons passing close to the slit are accelerated or decelerated by an evanescent wave contained in the near field whose phase velocity is equal to the velocity of the electrons. The electron-evanescent wave interaction in the microslit has been analy...

A combined experimental and analytical approach for interface fracture parameters of dissimilar materials in electronic packages

International Nuclear Information System (INIS)

Kay, N.R.; Ghosh, S.; Guven, I.; Madenci, E.

2006-01-01

This study concerns the development of a combined experimental and analytical technique to determine the critical values of fracture parameters for interfaces between dissimilar materials in electronic packages. This technique utilizes specimens from post-production electronic packages. The mechanical testing is performed inside a scanning electron microscope while the measurements are achieved by means of digital image correlation. The measured displacements around the crack tip are used as the boundary conditions for the analytical model to compute the energy release rate. The critical energy release rate values obtained from post-production package specimens are obtained to be lower than those laboratory specimens

Transient nutation electron spin resonance spectroscopy on spin-correlated radical pairs: A theoretical analysis on hyperfine-induced nuclear modulations

Science.gov (United States)

Weber, Stefan; Kothe, Gerd; Norris, James R.

1997-04-01

The influence of anisotropic hyperfine interaction on transient nutation electron paramagnetic resonance (EPR) of light-induced spin-correlated radical pairs is studied theoretically using the density operator formalism. Analytical expressions for the time evolution of the transient EPR signal during selective microwave excitation of single transitions are derived for a model system comprised of a weakly coupled radical pair and one hyperfine-coupled nucleus with I=1/2. Zero-quantum electron coherence and single-quantum nuclear coherence are created as a result of the sudden light-induced generation of the radical pair state from a singlet-state precursor. Depending on the relative sizes of the nuclear Zeeman frequency and the secular and pseudo-secular parts of the hyperfine coupling, transitions between levels with different nuclear spin orientations are predicted to modulate the time-dependent EPR signal. These modulations are in addition to the well-known transient nutations and electron zero-quantum precessions. Our calculations provide insight into the mechanism of recent experimental observations of coherent nuclear modulations in the time-resolved EPR signals of doublets and radical pairs. Two distinct mechanisms of the modulations are presented for various microwave magnetic field strengths. The first modulation scheme arises from electron and nuclear coherences initiated by the laser excitation pulse and is "read out" by the weak microwave magnetic field. While the relative modulation depth of these oscillations with respect to the signal intensity is independent of the Rabi frequency, ω1, the frequencies of this coherence phenomenon are modulated by the effective microwave amplitude and determined by the nuclear Zeeman interaction and hyperfine coupling constants as well as the electron-electron spin exchange and dipolar interactions between the two radical pair halves. In a second mechanism the modulations are both created and detected by the microwave

A Prototype User Interface for a Mobile Electronic Clinical Note Data Entry System

OpenAIRE

Zafar, Atif; Lehto, Mark; Kim, Jongseo

2005-01-01

Recent advances in mobile computing technologies have made electronic medical records (EMRs) on handheld devices an attractive possibility. However, data entry paradigms popular on desktop machines do not translate well to mobile devices1,2. Based on a review of the literature on mobile device usability1–4, we built a prototype user interface for mobile EMRs and held focus groups with clinician users whose feedback provided useful insight about design choices, functionality and...

The influence of electron inertia on the modulational instability of ion-acoustic waves

International Nuclear Information System (INIS)

Parkes, E.J.

1993-01-01

The influence of electron inertia, ion streaming and weak relativistic effects on the modulational instability of ion-acoustic waves in a collisionless unmagnetized plasma is investigated. The derivative expansion method is used to derive a nonlinear Schroedinger equation, from which an instability criterion is deduced. When electron inertia is ignored, ion streaming and weak relativistic effects have little effect on the instability criterion. It is shown that when electron inertia is taken into account, the instability criterion is sensitive to weakly relativistic ion streaming, but not to the ratio of electron mass to ion mass. (Author)

Effects of radial envelope modulations on the collisionless trapped-electron mode in tokamak plasmas

Science.gov (United States)

Chen, Hao-Tian; Chen, Liu

2018-05-01

Adopting the ballooning-mode representation and including the effects of radial envelope modulations, we have derived the corresponding linear eigenmode equation for the collisionless trapped-electron mode in tokamak plasmas. Numerical solutions of the eigenmode equation indicate that finite radial envelope modulations can affect the linear stability properties both quantitatively and qualitatively via the significant modifications in the corresponding eigenmode structures.

An object-oriented software interface to VME

International Nuclear Information System (INIS)

Thomas, Timothy L; Gottlieb, Eric; Gold, Michael

1996-01-01

In the next millennium, data acquisition tasks for high energy physics will increasingly rely on distributed processing and the VME bus. To provide transparent, general-purpose access to VME hardware modules through a VME-embedded processor, we have created a simple, portable, easily configured object-oriented interface to the VME bus. This software is particularly well-suited for hardware development, providing rapid engineering level access to the VME interface of prototype modules. (author)

Direct determination of energy level alignment and charge transport at metal-Alq3 interfaces via ballistic-electron-emission spectroscopy.

Science.gov (United States)

Jiang, J S; Pearson, J E; Bader, S D

2011-04-15

Using ballistic-electron-emission spectroscopy (BEES), we directly determined the energy barrier for electron injection at clean interfaces of Alq(3) with Al and Fe to be 2.1 and 2.2 eV, respectively. We quantitatively modeled the sub-barrier BEES spectra with an accumulated space charge layer, and found that the transport of nonballistic electrons is consistent with random hopping over the injection barrier.

Fully Atomistic Understanding of the Electronic and Optical Properties of a Prototypical Doped Charge-Transfer Interface

DEFF Research Database (Denmark)

Brivio, Gian Paolo; Baby, Anu; Gruenewald, Marco

2017-01-01

The current study generates profound atomistic insights into doping-induced changes of the optical and electronic properties of the prototypical PTCDA/Ag(111) interface. For doping K atoms are used, as KxPTCDA/Ag(111) has the distinct advantage of forming well-defined stoichiometric phases...

Chemistry of green encapsulating molding compounds at interfaces with other materials in electronic devices

Energy Technology Data Exchange (ETDEWEB)

Scandurra, A.; Zafarana, R.; Tenya, Y.; Pignataro, S

2004-07-31

The interface chemistry between encapsulating epoxy phenolic molding compound (EMC) containing phosphorous based organic flame retardant (the so called 'green materials') and copper oxide-hydroxide and aluminum oxide-hydroxide surfaces have been studied in comparison with 'conventional' EMC containing bromine and antimony as flame retardant. These green materials are designed to reduce the presence of toxic elements in the electronic packages and, consequently, in the environment. For the study were used a Scanning Acoustic Microscopy for delamination measurements, a dynamometer for the pull strength measurements and an ESCA spectrometer for chemical analysis of the interface. The general behavior of the green compound in terms of delamination, adhesion, and corrosion is found better or at least comparable than that of the conventional EMC.

Atomic and electronic structure of doped Si (111 ) (2 √{3 }×2 √{3 }) R 30∘ -Sn interfaces

Science.gov (United States)

Yi, Seho; Ming, Fangfei; Huang, Ying-Tzu; Smith, Tyler S.; Peng, Xiyou; Tu, Weisong; Mulugeta, Daniel; Diehl, Renee D.; Snijders, Paul C.; Cho, Jun-Hyung; Weitering, Hanno H.

2018-05-01

The hole-doped Si (111 ) (2 √ 3 ×2 √ 3 ) R 30∘ -Sn interface exhibits a symmetry-breaking insulator-insulator transition below 100 K that appears to be triggered by electron tunneling into the empty surface-state bands. No such transition is seen in electron-doped systems. To elucidate the nature and driving force of this phenomenon, the structure of the interface must be resolved. Here we report on an extensive experimental and theoretical study, including scanning tunneling microscopy and spectroscopy (STM/STS), dynamical low-energy electron diffraction (LEED) analysis, and density functional theory (DFT) calculations, to elucidate the structure of this interface. We consider six different structure models, three of which have been proposed before, and conclude that only two of them can account for the majority of experimental data. One of them is the model according to Törnevik et al. [C. Törnevik et al., Phys. Rev. B 44, 13144 (1991), 10.1103/PhysRevB.44.13144] with a total Sn coverage of 14/12 monolayers (ML). The other is the "revised trimer model" with a total Sn coverage of 13/12 ML, introduced in this work. These two models are very difficult to discriminate on the basis of DFT or LEED alone, but STS data clearly point toward the Törnevik model as the most viable candidate among the models considered here. The STS data also provide additional insights regarding the electron-injection-driven phase transformation. Similar processes may occur at other metal/semiconductor interfaces, provided they are nonmetallic and can be doped. This could open up a new pathway toward the creation of novel surface phases with potentially very interesting and desirable electronic properties.

Block diagrams of the radar interface and control unit

Science.gov (United States)

Collier, J. W.

1989-01-01

The Interface and Control Unit is the heart of the radar module, which occupies one complex channel of the High-Speed Data Acquisition System of the Goldstone Solar System Radar. Block diagrams of the interface unit are presented as an aid to understanding its operation and interconnections to the rest of the radar module.

A theoretical study of structural and electronic properties of pentacene/Al(100) interface.

Science.gov (United States)

Saranya, G; Nair, Shiny; Natarajan, V; Kolandaivel, P; Senthilkumar, K

2012-09-01

The first principle calculations within the framework of density functional theory have been performed for the pentacene molecule deposited on the aluminum Al(100) substrate to study the structural and electronic properties of the pentacene/Al(100) interface. The most stable configuration was found at bridge site with 45° rotation of the pentacene molecule on Al(100) surface with a vertical distance of 3.4 Å within LDA and 3.8 Å within GGA functionals. The calculated adsorption energy reveals that the adsorption of pentacene molecule on Al(100) surface is physisorption. For the stable adsorption geometry the electronic properties such as density of states (DOS), partial density of states (PDOS), Mulliken population analysis and Schottky barrier height are studied. The analysis of atomic charge, DOS and PDOS show that the charge is transferred from the Al(100) surface to pentacene molecule, and the transferred charge is about -0.05 electrons. For the adsorbed system, the calculated Schottky barrier height for hole and electron transport is 0.27 and 1.55 eV, respectively. Copyright © 2012 Elsevier Inc. All rights reserved.

Room temperature formation of high-mobility two-dimensional electron gases at crystalline complex oxide interfaces

DEFF Research Database (Denmark)

Chen, Yunzhong; Bovet, N.; Kasama, Takeshi

2014-01-01

Well-controlled sub-unit-cell layer-bylayer epitaxial growth of spinel alumina is achieved at room temperature on a TiO2-terminated SrTiO3 single-crystalline substrate. By tailoring the interface redox reaction, 2D electron gases with mobilities exceeding 3000 cm 2 V−1 s−1 are achieved at this no...

Electronic modulation of infrared radiation in graphene plasmonic resonators.

Science.gov (United States)

Brar, Victor W; Sherrott, Michelle C; Jang, Min Seok; Kim, Seyoon; Kim, Laura; Choi, Mansoo; Sweatlock, Luke A; Atwater, Harry A

2015-05-07

All matter at finite temperatures emits electromagnetic radiation due to the thermally induced motion of particles and quasiparticles. Dynamic control of this radiation could enable the design of novel infrared sources; however, the spectral characteristics of the radiated power are dictated by the electromagnetic energy density and emissivity, which are ordinarily fixed properties of the material and temperature. Here we experimentally demonstrate tunable electronic control of blackbody emission from graphene plasmonic resonators on a silicon nitride substrate. It is shown that the graphene resonators produce antenna-coupled blackbody radiation, which manifests as narrow spectral emission peaks in the mid-infrared. By continuously varying the nanoresonator carrier density, the frequency and intensity of these spectral features can be modulated via an electrostatic gate. This work opens the door for future devices that may control blackbody radiation at timescales beyond the limits of conventional thermo-optic modulation.

Key-value store with internal key-value storage interface

Science.gov (United States)

Bent, John M.; Faibish, Sorin; Ting, Dennis P. J.; Tzelnic, Percy; Gupta, Uday; Grider, Gary; Bonnie, David J.

2018-01-16

A key-value store is provided having one or more key-value storage interfaces. A key-value store on at least one compute node comprises a memory for storing a plurality of key-value pairs; and an abstract storage interface comprising a software interface module that communicates with at least one persistent storage device providing a key-value interface for persistent storage of one or more of the plurality of key-value pairs, wherein the software interface module provides the one or more key-value pairs to the at least one persistent storage device in a key-value format. The abstract storage interface optionally processes one or more batch operations on the plurality of key-value pairs. A distributed embodiment for a partitioned key-value store is also provided.

Dual passivation of intrinsic defects at the compound semiconductor/oxide interface using an oxidant and a reductant.

Science.gov (United States)

Kent, Tyler; Chagarov, Evgeniy; Edmonds, Mary; Droopad, Ravi; Kummel, Andrew C

2015-05-26

Studies have shown that metal oxide semiconductor field-effect transistors fabricated utilizing compound semiconductors as the channel are limited in their electrical performance. This is attributed to imperfections at the semiconductor/oxide interface which cause electronic trap states, resulting in inefficient modulation of the Fermi level. The physical origin of these states is still debated mainly because of the difficulty in assigning a particular electronic state to a specific physical defect. To gain insight into the exact source of the electronic trap states, density functional theory was employed to model the intrinsic physical defects on the InGaAs (2 × 4) surface and to model the effective passivation of these defects by utilizing both an oxidant and a reductant to eliminate metallic bonds and dangling-bond-induced strain at the interface. Scanning tunneling microscopy and spectroscopy were employed to experimentally determine the physical and electronic defects and to verify the effectiveness of dual passivation with an oxidant and a reductant. While subsurface chemisorption of oxidants on compound semiconductor substrates can be detrimental, it has been shown theoretically and experimentally that oxidants are critical to removing metallic defects at oxide/compound semiconductor interfaces present in nanoscale channels, oxides, and other nanostructures.

Multi-interface roughness effects on electron mobility in a Ga0.5In0.5P/GaAs multisubband coupled quantum well structure

International Nuclear Information System (INIS)

Sahu, Trinath; Shore, K Alan

2009-01-01

We analyse the effect of interface roughness scattering on low temperature electron mobility μ n mediated by intersubband interactions in a multisubband coupled Ga 0.5 In 0.5 P/GaAs quantum well structure. We consider a barrier δ-doped double quantum well system in which the subband electron mobility is limited by the interface roughness scattering μ IR n and ionized impurity scattering μ imp n . We analyse the effect of the intersubband interaction and coupling of subband wavefunctions through the barrier on the intrasubband and intersubband transport scattering rates. We show that the intersubband interaction controls the roughness potential of different interfaces through the dielectric screening matrix. In the case of lowest subband occupancy, the mobility is mainly governed by the interface roughness of the central barrier. Whereas when two subbands are occupied, the interface roughness of the outer barrier predominates due to intersubband effects. The influence of the intersubband interaction also exhibits interesting results on the well width up to which the interface roughness dominates in a double quantum well structure

Building America Case Study: Photovoltaic Systems with Module-Level Power Electronics

Energy Technology Data Exchange (ETDEWEB)

2015-09-01

Direct current (DC) power optimizers and microinverters (together known as module-level power electronics, or MLPE) are one of the fastest growing market segments in the solar industry. According to GTM Research in The Global PV Inverter Landscape 2015, over 55% of all residential photovoltaic (PV) installations in the United States used some form of MLPE in 2014.

Recurrent modulation of galactic cosmic ray electrons and protons: Ulysses COSPIN/KET observations

International Nuclear Information System (INIS)

Heber, B.; Blake, J.B.; Paizis, C.; Bothmer, V.; Kunow, H.; Wibberenz, G.; Burger, R.A.; Potgieter, M.S.

2000-01-01

Since measurements of space probes in the interplanetary space became available it has been known that associated with the occurrence of recurrent fast and slow solar wind streams, forming Corotating Interaction Regions, recurrent variations in the cosmic ray nuclei flux are observed. As pointed out recently by Jokipii and Kota (2) recurrent modulation for positively and negatively charged particles may be different. In the time interval extending from July 1992 to July 1994, Ulysses on its journey to high heliographic latitudes registered ∼20 stable and long-lasting Corotating Interaction Regions (CIRs). In this work we use data from the Cosmic Ray and Solar Particle Investigation Kiel Electron Telescope (COSPIN/KET) instrument on board Ulysses to study the recurrent variation of 2.5 GV electrons and protons. We find that 1) electrons are indeed periodically modulated, but that 2) the periodicity of ∼29 days is longer than the period of ∼26 days for protons, and that 3) the amplitude is larger than the one observed for protons

Investigating PID Shunting in Polycrystalline Silicon Modules via Multiscale, Multitechnique Characterization

Energy Technology Data Exchange (ETDEWEB)

Harvey, Steven P [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Moseley, John [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Norman, Andrew [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Hacke, Peter L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Johnston, Steven [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Al-Jassim, Mowafak M [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Stokes, Adam [Colorado School of Mines; Gorman, Brian [Colorado School of Mines

2018-02-27

We investigated the potential-induced degradation (PID) shunting mechanism in multicrystalline-silicon photovoltaic modules by using a multiscale, multitechnique characterization approach. Both field-stressed modules and laboratory-stressed mini modules were studied. We used photoluminescence, electroluminescence, and dark lock-in thermography imaging to identify degraded areas at the module scale. Small samples were then removed from degraded areas, laser marked, and imaged by scanning electron microscopy. We used simultaneous electron-beam induced current imaging and focused ion beam milling to mark around PID shunts for chemical analysis by time-of-flight secondary-ion mass spectrometry or to isolate individual shunt defects for transmission electron microscopy and atom-probe tomography analysis. By spanning a range of 10 orders of magnitude in size, this approach enabled us to investigate the root-cause mechanisms for PID shunting. We observed a direct correlation between recombination active shunts and sodium content. The sodium content in shunted areas peaks at the SiNX/Si interface and is consistently observed at a concentration of 0.1% to 2% in shunted areas. Analysis of samples subjected to PID recovery, either activated by electron beam or thermal effects only, reveals that recovery of isolated shunts correlates with diffusion of sodium out of the structural defects to the silicon surface. We observed the role of oxygen and chlorine in PID shunting and found that those species - although sometimes present in structural defects where PID shunting was observed - do not play a consistent role in PID shunting.

Nanoscale patterning of electronic devices at the amorphous LaAlO3/SrTiO3 oxide interface using an electron sensitive polymer mask

DEFF Research Database (Denmark)

Bjorlig, Anders V.; von Soosten, Merlin; Erlandsen, Ricci

2018-01-01

A simple approach is presented for designing complex oxide mesoscopic electronic devices based on the conducting interfaces of room temperature grown LaAlO3/SrTiO3 heterostructures. The technique is based entirely on methods known from conventional semiconductor processing technology, and we demo...

Semiconductor interfaces of polycrystalline CdTe thin-film solar cells. Characterization and modification of electronic properties

International Nuclear Information System (INIS)

Fritsche, J.

2003-01-01

In this thesis for the first time the electronic properties of the semiconductor interfaces in polycrystalline CdTe thin-film solar cells, as well as the morphological and electronic properties of the single semiconductor surfaces were systematically characterized by surface-sensitive measuring methods. The morphological surface properties were analyzed by scanning force microscopy. As substrate materials with SnO 2 /ITO covered glass was applied, where the CdS and CdTe layers were deposited. Furthermore the electronic and morphological material properties of differently treated SnO 2 surfaces were characterized. Beside the studies with scanning force microscopy sputtering depth profiles and X-ray photoelectron spectroscopy were measured

Integration of strategy experiential learning in e-module of electronic records management

Directory of Open Access Journals (Sweden)

S. Sutirman

2018-01-01

Full Text Available This study aims to determine the effectiveness of e-module of electronic records management integrated with experiential learning strategies to improve student achievement in the domain of cognitive, psychomotor, and affective. This study is a research and development. Model research and development used is Web-Based Instructional Design (WBID developed by Davidson-Shivers and Rasmussen. The steps of research and development carried out by analysis, evaluation planning, concurrent design, implementation, and a summative evaluation. The approach used in this study consisted of qualitative and quantitative approaches. Collecting data used the Delphi technique, observation, documentation studies and tests. Research data analysis used qualitative analysis and quantitative analysis. Testing the effectiveness of the product used a quasi-experimental research design pretest-posttest non-equivalent control group. The results showed that the e-module of electronic records management integrated with experiential learning strategies can improve student achievement in the domain of cognitive, psychomotor, and affective.

Inflatable Module Seal Interface Development and Testing

Data.gov (United States)

National Aeronautics and Space Administration — Develop a repeatable low permeable sealing interface evaluating O-ring, RTV bond and flowed RTV bond methods. Advanced Bladder materials (ArmorFlex, Nanoclay, etc)...

Strontium ruthenate–anatase titanium dioxide heterojunctions from first-principles: Electronic structure, spin, and interface dipoles

Energy Technology Data Exchange (ETDEWEB)

Ferdous, Naheed; Ertekin, Elif, E-mail: ertekin@illinois.edu [Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, 1206 W Green Street, Urbana, Illinois 61801 (United States)

2016-07-21

The epitaxial integration of functional oxides with wide band gap semiconductors offers the possibility of new material systems for electronics and energy conversion applications. We use first principles to consider an epitaxial interface between the correlated metal oxide SrRuO{sub 3} and the wide band gap semiconductor TiO{sub 2}, and assess energy level alignment, interfacial chemistry, and interfacial dipole formation. Due to the ferromagnetic, half-metallic character of SrRuO{sub 3}, according to which only one spin is present at the Fermi level, we demonstrate the existence of a spin dependent band alignment across the interface. For two different terminations of SrRuO{sub 3}, the interface is found to be rectifying with a Schottky barrier of ≈1.3–1.6 eV, in good agreement with experiment. In the minority spin, SrRuO{sub 3} exhibits a Schottky barrier alignment with TiO{sub 2} and our calculated Schottky barrier height is in excellent agreement with previous experimental measurements. For majority spin carriers, we find that SrRuO{sub 3} recovers its exchange splitting gap and bulk-like properties within a few monolayers of the interface. These results demonstrate a possible approach to achieve spin-dependent transport across a heteroepitaxial interface between a functional oxide material and a conventional wide band gap semiconductor.

Study of the electronic structure at the interface between fluorene-1-carboxylic acid molecules and Cu(110)

International Nuclear Information System (INIS)

Song Fei; Mao Hongying; Guan Dandan; Dou Weidong; Zhang Hanjie; Li Haiyang; He Pimo; Bao Shining; Hofmann, Philip

2009-01-01

The interface electronic properties of fluorene-1-carboxylic acid (FC-1) adsorbed on Cu(110) have been studied by ultraviolet photoemission spectroscopy (UPS) and first-principles calculations. Both the molecular orbitals and the Cu valence band are significantly modified upon adsorption. FC-1 is chemically bonded to Cu(110) through charge donation and back donation involving the lowest unoccupied molecular orbital (LUMO) and the highest occupied molecular orbital (HOMO) of the molecule. An observed reduction of the work function can be attributed to the adsorption induced charge redistribution, and the positive interface dipole.

Adaptation of the Camera Link Interface for Flight-Instrument Applications

Science.gov (United States)

Randall, David P.; Mahoney, John C.

2010-01-01

COTS (commercial-off-the-shelf) hard ware using an industry-standard Camera Link interface is proposed to accomplish the task of designing, building, assembling, and testing electronics for an airborne spectrometer that would be low-cost, but sustain the required data speed and volume. The focal plane electronics were designed to support that hardware standard. Analysis was done to determine how these COTS electronics could be interfaced with space-qualified camera electronics. Interfaces available for spaceflight application do not support the industry standard Camera Link interface, but with careful design, COTS EGSE (electronics ground support equipment), including camera interfaces and camera simulators, can still be used.

New evidence and impact of electron transport non-linearities based on new perturbative inter-modulation analysis

NARCIS (Netherlands)

van Berkel, M.; Kobayashi, T.; Igami, H.; Vandersteen, Gerd; Hogeweij, G.M.D.; Tanaka, K.; Tamura, N.; Zwart, Hans; Kubo, S.; Ito, S.; Tsuchiya, H.; de Baar, M.R.

2017-01-01

A new methodology to analyze non-linear components in perturbative transport experiments is introduced. The methodology has been experimentally validated in the Large Helical Device for the electron heat transport channel. Electron cyclotron resonance heating with different modulation frequencies by

AuTom: a novel automatic platform for electron tomography reconstruction

KAUST Repository

Han, Renmin

2017-07-26

We have developed a software package towards automatic electron tomography (ET): Automatic Tomography (AuTom). The presented package has the following characteristics: accurate alignment modules for marker-free datasets containing substantial biological structures; fully automatic alignment modules for datasets with fiducial markers; wide coverage of reconstruction methods including a new iterative method based on the compressed-sensing theory that suppresses the “missing wedge” effect; and multi-platform acceleration solutions that support faster iterative algebraic reconstruction. AuTom aims to achieve fully automatic alignment and reconstruction for electron tomography and has already been successful for a variety of datasets. AuTom also offers user-friendly interface and auxiliary designs for file management and workflow management, in which fiducial marker-based datasets and marker-free datasets are addressed with totally different subprocesses. With all of these features, AuTom can serve as a convenient and effective tool for processing in electron tomography.

The emergency braking module for an electronic copilot design and first results

Energy Technology Data Exchange (ETDEWEB)

Ameling, C.; Kirchner, A. [Univ. of the Federal Armed Forces Hamburg (Germany). Dept. of Mechanical Engineering

2000-07-01

This paper deals with design and development of an emergency braking module for an electronic copilot (ECP). ECP is used within an autonomous vehicle as a partial redundant system for vehicle control. ECP receives the necessary information about the positions and relative velocities of obstacles from various sources such as laserscanner or vision sensors. In the current stage of development the emergency breaking module computes, whether an object collides with the front of the vehicle. If the time-to-collision falls below the braking capacity an emergency braking is triggered. Experimental results show the capabilities of the system. (orig.)

Some computer graphical user interfaces in radiation therapy.

Science.gov (United States)

Chow, James C L

2016-03-28

In this review, five graphical user interfaces (GUIs) used in radiation therapy practices and researches are introduced. They are: (1) the treatment time calculator, superficial X-ray treatment time calculator (SUPCALC) used in the superficial X-ray radiation therapy; (2) the monitor unit calculator, electron monitor unit calculator (EMUC) used in the electron radiation therapy; (3) the multileaf collimator machine file creator, sliding window intensity modulated radiotherapy (SWIMRT) used in generating fluence map for research and quality assurance in intensity modulated radiation therapy; (4) the treatment planning system, DOSCTP used in the calculation of 3D dose distribution using Monte Carlo simulation; and (5) the monitor unit calculator, photon beam monitor unit calculator (PMUC) used in photon beam radiation therapy. One common issue of these GUIs is that all user-friendly interfaces are linked to complex formulas and algorithms based on various theories, which do not have to be understood and noted by the user. In that case, user only needs to input the required information with help from graphical elements in order to produce desired results. SUPCALC is a superficial radiation treatment time calculator using the GUI technique to provide a convenient way for radiation therapist to calculate the treatment time, and keep a record for the skin cancer patient. EMUC is an electron monitor unit calculator for electron radiation therapy. Instead of doing hand calculation according to pre-determined dosimetric tables, clinical user needs only to input the required drawing of electron field in computer graphical file format, prescription dose, and beam parameters to EMUC to calculate the required monitor unit for the electron beam treatment. EMUC is based on a semi-experimental theory of sector-integration algorithm. SWIMRT is a multileaf collimator machine file creator to generate a fluence map produced by a medical linear accelerator. This machine file controls

High-T{sub c} superconductivity in monolayer FeSe on SrTiO{sub 3} via interface-induced small-q electron-phonon coupling

Energy Technology Data Exchange (ETDEWEB)

Aperis, Alexandros; Oppeneer, Peter M. [Uppsala University (Sweden)

2016-07-01

A monolayer of FeSe deposited on SrTiO{sub 3} becomes superconducting at temperatures that exceed T{sub c}=100 K, as compared to a bulk T{sub c} of 8 K. Recent ARPES measurements have provided strong evidence that an interfaced-induced electron-phonon interaction between FeSe electrons and SrTiO{sub 3} phonons plays a decisive role in this phenomenon. However, the mechanism that drives this tantalizing high-T{sub c} boost is still unclear. Here, we examine the recent experimental findings using fully anisotropic, full bandwidth multiband Eliashberg calculations focusing on the superconducting state of FeSe/STO. We use a realistic ten band tight-binding band structure for the electrons of monolayer FeSe and study how the suggested interface-induced small-q electron-phonon interaction mediates superconductivity. Our calculations produce a high-T{sub c} s-wave superconducting state with the experimentally resolved momentum dependence. Further, we calculate the normal metal/insulator/superconductor tunneling spectrum and identify fingerprints of the interface-induced phonon mechanism.

VMEbus interface for spectroscopy ADCs

International Nuclear Information System (INIS)

Jaeaeskelaeinen, M.

1987-01-01

A high performance VMEbus interface for spectroscopy ADCs and other similar devices used in nuclear spectroscopy coincidence experiments has been developed. This new module can be used to interface existing spectroscopy ADCs with fast parallel data transfer into the industry standard multiprocessor VMEbus. The unit provides a fast direct readout of the ADC data into the VMEbus memory. The interface also has built-in capabilities that enable it to be used in coincidence experiments for slow data timing and ADC pattern recognition. (orig.)

Ballistic electron emissions microscopy (BEEM) of ferromagnet-semiconductor interfaces; Ballistische Elektronen Emissions Mikroskopie (BEEM) an Ferromagnet-Halbleitergrenzflaechen

Energy Technology Data Exchange (ETDEWEB)

Obernhuber, S.

2007-04-15

For current research on spin-transistors it is important to know the characteristics of ferromagnet semiconductor interfaces. The ballistic electron emission microscopy (BEEM) is a method to investigate such a buried interface with nanometer resolution. In this work several ferromagnet/GaAs(110) interfaces have been analysed concerning their homogeneity and mean local Schottky-barrier heights (SBH) have been determined. In Addition, the resulting integral SBH was calculated from the distribution of the local SBHs and compared with the SBH determined from voltage/current characteristics. The areas with a low SBH dominate the current conduction across the interface. Additional BEEM measurements on (AlGaAs/GaAs) heterostructures have been performed. This heterostructures consist of 50 nm AlGaAs/GaAs layers. The results of the BEEM measurements indicate, that the GaAs QWs are defined by AlGaAs barriers. The transition from AlGaAs to GaAs is done within 10 nm. (orig.)

Gate Modulation of Graphene-ZnO Nanowire Schottky Diode

OpenAIRE

Liu, Ren; You, Xu-Chen; Fu, Xue-Wen; Lin, Fang; Meng, Jie; Yu, Da-Peng; Liao, Zhi-Min

2015-01-01

Graphene-semiconductor interface is important for the applications in electronic and optoelectronic devices. Here we report the modulation of the electric transport properties of graphene/ZnO nanowire Schottky diode by gate voltage (Vg). The ideality factor of the graphene/ZnO nanowire Schottky diode is ~1.7, and the Schottky barrier height is ~0.28?eV without external Vg. The Schottky barrier height is sensitive to Vg due to the variation of Fermi level of graphene. The barrier height increa...

Full system test of module to DAQ for ATLAS IBL

Energy Technology Data Exchange (ETDEWEB)

Behpour, Rouhina; Mattig, Peter; Wensing, Marius [Wuppertal University (Germany); Bindi, Marcello [Goettingen University (Germany)

2015-07-01

IBL (Insertable B Layer) as the inner most layer in the ATLAS detector at the LHC has been successfully integrated to the system last June 2014. IBL system reliability and consistency is under investigation during ongoing milestone runs at CERN. Back of Crate card (BOC) and Read out Driver (ROD) as two of the main electronic cards act as an interface between the IBL modules and the TDAQ chain. The detector data will be received and processed and then formatted by an interaction between these two electronic cards. The BOC takes advantage of using S-Link implementation inside the main FPGAs. The S-Link protocol as a standard high performance data acquisition link between the readout electronic cards and the TDAQ system is developed and used at CERN. It is based on the idea that detector formatted data will be transferred through optical fibers to the ROS (Read out System) PC for being stored via the ROBIN (Read out Buffer) cards. This talk presents the results that confirm a stable and good performance of the system, from the modules to the read out electronic cards and then to the ROS PCs via S-Link.

Design of the miniaturized free electron laser module as an efficient source of the THz waves

International Nuclear Information System (INIS)

Kim, Young Chul; Ahn, Seong Joon; Kim, Ho Seob; Kim, Dae-Wook; Ahn, Seungjoon

2011-01-01

Since the tremendous potential of the THz wave for the bio-technological applications has been found, there has been a lot of interest paid to development of the THz-wave sources. The miniaturized free electron laser (FEL) module based on the microcolumn can be a very convenient THz wave emitter because of its compactness. In this work, we tried to design the miniaturized FEL module to achieve the optimized electron beam (e-beam) trajectory in the module by using 3D simulation tool. We found that the accelerator bias, the length and radius of the limiting aperture were important parameters to obtain the strong and parallel e-beam. We have also proposed the ring-type grids to get more symmetrical behavior of the e-beam in the wiggler.

Design of the miniaturized free electron laser module as an efficient source of the THz waves

Energy Technology Data Exchange (ETDEWEB)

Kim, Young Chul [Department of Optometry, Eulji University, 212 Yangji-dong, Sujeong-gu, Seongnam-si, Gyeonggi-do 461-713 (Korea, Republic of); Ahn, Seong Joon [Department of I and C Engineering, Sun Moon University, Tangjeong-myeon, Asan-si, Chungnam 336-708 (Korea, Republic of); Kim, Ho Seob; Kim, Dae-Wook [Department of Information Display, Sun Moon University, 100 Kalsan-ri, Tangjeong-myun, Asan-si, Chungnam 336-708 (Korea, Republic of); Ahn, Seungjoon, E-mail: sjan@sunmoon.ac.kr [Department of Information Display, Sun Moon University, 100 Kalsan-ri, Tangjeong-myun, Asan-si, Chungnam 336-708 (Korea, Republic of)

2011-10-21

Since the tremendous potential of the THz wave for the bio-technological applications has been found, there has been a lot of interest paid to development of the THz-wave sources. The miniaturized free electron laser (FEL) module based on the microcolumn can be a very convenient THz wave emitter because of its compactness. In this work, we tried to design the miniaturized FEL module to achieve the optimized electron beam (e-beam) trajectory in the module by using 3D simulation tool. We found that the accelerator bias, the length and radius of the limiting aperture were important parameters to obtain the strong and parallel e-beam. We have also proposed the ring-type grids to get more symmetrical behavior of the e-beam in the wiggler.

High resolution electron microscopy studies of interfaces between Al2O3 substrates and MBE grown Nb films

International Nuclear Information System (INIS)

Mayer, J.; Ruhle, M.; Dura, J.; Flynn, C.P.

1991-01-01

This paper reports on single crystal niobium films grown by Molecular Beam Epitaxy (MBE) on (001) S sapphire substrates. Cross-sectional specimens with thickness of 2 O 3 interface could be investigated by high resolution electron microscopy (HREM). The orientation relationship between the metal film and the ceramic substrate was verified by selected area diffraction: (111) Nb parallel (0001) S and [1 bar 10] Nb parallel [2 bar 1 bar 10] S . The atomistic structure of the interface was identified by HREM

Chemical characterization of extra layers at the interfaces in MOCVD InGaP/GaAs junctions by electron beam methods

Directory of Open Access Journals (Sweden)

Shakhmin Alexey

2011-01-01

Full Text Available Abstract Electron beam methods, such as cathodoluminescence (CL that is based on an electron-probe microanalyser, and (200 dark field and high angle annular dark field (HAADF in a scanning transmission electron microscope, are used to study the deterioration of interfaces in InGaP/GaAs system with the GaAs QW on top of InGaP. A CL emission peak different from that of the QW was detected. By using HAADF, it is found that the GaAs QW does not exist any longer, being replaced by extra interlayer(s that are different from GaAs and InGaP because of atomic rearrangements at the interface. The nature and composition of the interlayer(s are determined by HAADF. Such changes of the nominal GaAs QW can account for the emission observed by CL.

Molecular orientation and electronic structure at organic heterojunction interfaces

Energy Technology Data Exchange (ETDEWEB)

Zhong, Shu [Department of Chemistry, National University of Singapore, 3 Science Drive 3, 117543 Singapore (Singapore); Zhong, Jian Qiang; Wee, Andrew T.S. [Department of Physics, National University of Singapore, 2 Science Drive 3, 117542 Singapore (Singapore); Chen, Wei, E-mail: phycw@nus.edu.sg [Department of Chemistry, National University of Singapore, 3 Science Drive 3, 117543 Singapore (Singapore); Department of Physics, National University of Singapore, 2 Science Drive 3, 117542 Singapore (Singapore); National University of Singapore (Suzhou) Research Institute, Suzhou (China)

2015-10-01

Highlights: • Molecular orientation at the organic heterojunction interfaces. • Energy level alignments at the organic heterojunction interfaces. • Gap-states mediated interfacial energy level alignment. - Abstract: Due to the highly anisotropic nature of π-conjugated molecules, the molecular orientation in organic thin films can significantly affect light absorption, charge transport, energy level alignment (ELA) and hence device performance. Synchrotron-based near-edge X-ray absorption fine structure (NEXAFS) spectroscopy represents a powerful technique for probing molecular orientation. The aim of this review paper is to provide a balanced assessment on the investigation of molecular orientation at the organic–organic heterojunction (OOH) interface by NEXAFS, as well as the gap-states mediated orientation dependent energy level alignment at OOH interfaces. We highlight recent progress in elucidating molecular orientation at OOH interfaces dominated by various interfacial interactions, gap-states controlled orientation dependent energy level alignments at OOH interfaces, and the manipulations of molecular orientation and ELA in OOH.

Interfacing Sensors To Micro Controllers

KAUST Repository

Norain, Mohamed

2018-01-01

This lecture will cover the most common interface and interface techniques between sensors and microcontrollers. The presentation will introduce the pros and cons of each interface type including analogue, digital and serial output sensors. It will also cover the basic required electronics knowledge to help you in selecting and designing your next sensor to microcontroller interface.

Interfacing Sensors To Micro Controllers

KAUST Repository

Norain, Mohamed

2018-01-15

This lecture will cover the most common interface and interface techniques between sensors and microcontrollers. The presentation will introduce the pros and cons of each interface type including analogue, digital and serial output sensors. It will also cover the basic required electronics knowledge to help you in selecting and designing your next sensor to microcontroller interface.

Automatic control variac system for electronic accelerator

International Nuclear Information System (INIS)

Zhang Shuocheng; Wang Dan; Jing Lan; Qiao Weimin; Ma Yunhai

2006-01-01

An automatic control variac system is designed in order to satisfy the controlling requirement of the electronic accelerator developed by the Institute. Both design and operational principles, structure of the system as well as the software of industrial PC and micro controller unit are described. The interfaces of the control module are RS232 and RS485. A fiber optical interface (FOC) could be set up if an industrial FOC network is necessary, which will extend the filed of its application and make the communication of the system better. It is shown in practice that the system can adjust the variac output voltage automatically and assure the accurate and automatic control of the electronic accelerator. The system is designed in accordance with the general design principles and possesses the merits such as easy operation and maintenance, good expansibility, and low cost, thus it could also be used in other industrial branches. (authors)

Modulation transfer function and detective quantum efficiency of electron bombarded charge coupled device detector for low energy electrons

International Nuclear Information System (INIS)

Horacek, Miroslav

2005-01-01

The use of a thinned back-side illuminated charge coupled device chip as two-dimensional sensor working in direct electron bombarded mode at optimum energy of the incident signal electrons is demonstrated and the measurements of the modulation transfer function (MTF) and detective quantum efficiency (DQE) are described. The MTF was measured for energy of electrons 4 keV using an edge projection method and a stripe projection method. The decrease of the MTF for a maximum spatial frequency of 20.8 cycles/mm, corresponding to the pixel size 24x24 μm, is 0.75≅-2.5 dB, and it is approximately the same for both horizontal and vertical directions. DQE was measured using an empty image and the mixing factor method. Empty images were acquired for energies of electrons from 2 to 5 keV and for various doses, ranging from nearly dark image to a nearly saturated one. DQE increases with increasing energy of bombarded electrons and reaches 0.92 for electron energy of 5 keV. For this energy the detector will be used for the angle- and energy-selective detection of signal electrons in the scanning low energy electron microscope

Optimizing the user interface of a data entry module for an electronic patient record for cardiac rehabilitation: A mixed method usability approach.

Science.gov (United States)

van Engen-Verheul, Mariëtte M; Peute, Linda W P; de Keizer, Nicolette F; Peek, Niels; Jaspers, Monique W M

2016-03-01

Cumbersome electronic patient record (EPR) interfaces may complicate data-entry in clinical practice. Completeness of data entered in the EPR determines, among other things, the value of computerized clinical decision support (CCDS). Quantitative usability evaluations can provide insight into mismatches between the system design model of data entry and users' data entry behavior, but not into the underlying causes for these mismatches. Mixed method usability evaluation studies may provide these insights, and thus support generating redesign recommendations for improving an EPR system's data entry interface. To improve the usability of the data entry interface of an EPR system with CCDS in the field of cardiac rehabilitation (CR), and additionally, to assess the value of a mixed method usability approach in this context. Seven CR professionals performed a think-aloud usability evaluation both before (beta-version) and after the redesign of the system. Observed usability problems from both evaluations were analyzed and categorized using Zhang et al.'s heuristic principles of good interface design. We combined the think-aloud usability evaluation of the system's beta-version with the measurement of a new usability construct: users' deviations in action sequence from the system's predefined data entry order sequence. Recommendations for redesign were implemented. We assessed whether the redesign improved CR professionals' (1) task efficacy (with respect to the completeness of data they collected), and (2) task efficiency (with respect to the average number of mouse clicks they needed to complete data entry subtasks). With the system's beta version, 40% of health care professionals' navigation actions through the system deviated from the predefined next system action. The causes for these deviations as revealed by the think-aloud method mostly concerned mismatches between the system design model for data entry action sequences and users expectations of these action

A Study of an Assistance SystemUsing a Haptic Interface

OpenAIRE

浅川, 貴史

2011-01-01

We make a proposal for a music baton system for visual handicapped persons. This system is constituted by an acceleration sensor. a radio module. and a haptic interface device. The acceleration sensor is built in the music baton grip and the data are transmitted by the radio module. A performer has a receiver with the haptic interface device. The receiver's CPU picks up rhythm from the data and vibrates the haptic interface device. This paper is described about an experiment of comparing the ...

Development of an interface for an ultrareliable fault-tolerant control system and an electronic servo-control unit

Science.gov (United States)

Shaver, Charles; Williamson, Michael

1986-01-01

The NASA Ames Research Center sponsors a research program for the investigation of Intelligent Flight Control Actuation systems. The use of artificial intelligence techniques in conjunction with algorithmic techniques for autonomous, decentralized fault management of flight-control actuation systems is explored under this program. The design, development, and operation of the interface for laboratory investigation of this program is documented. The interface, architecturally based on the Intel 8751 microcontroller, is an interrupt-driven system designed to receive a digital message from an ultrareliable fault-tolerant control system (UFTCS). The interface links the UFTCS to an electronic servo-control unit, which controls a set of hydraulic actuators. It was necessary to build a UFTCS emulator (also based on the Intel 8751) to provide signal sources for testing the equipment.

Band offsets and electronic structures of interface between In{sub 0.5}Ga{sub 0.5}As and InP

Energy Technology Data Exchange (ETDEWEB)

Cai, Genwang [School of Physical Science and Engineering and Key Laboratory of Materials Physics of Ministry of Education of China, Zhengzhou University, Zhengzhou 450052 (China); College of Science, Henan University of Technology, Zhengzhou 450001 (China); Wang, Changhong; Wang, Weichao [College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071 (China); Liang, Erjun, E-mail: ejliang@zzu.edu.cn [School of Physical Science and Engineering and Key Laboratory of Materials Physics of Ministry of Education of China, Zhengzhou University, Zhengzhou 450052 (China)

2016-02-07

III–V semiconductor interfacing with high-κ gate oxide is crucial for the high mobility metal-oxide-semiconductor field transistor device. With density functional theory calculations, we explored the band offsets and electronic structures of the In{sub 0.5}Ga{sub 0.5}As/InP interfaces with various interfacial bondings. Among six different bonding interfaces, we found that P-In(Ga) bonding interface showed the highest stability. Local density of states calculations was adopted to calculate the band offsets. Except for the metallic interface, we noticed that neither valence band offset nor conduction band offset depended on the interfacial bondings. For the most stable P-In(Ga) interface, we did not observe any gap states. Furthermore, we explored the P-In(Ga) interfaces with interfacial P-As exchange defects, which slightly modified the interface stability and the band offsets but did not produce any gap states. These findings provide solid evidence that InP could serve as a promising interfacial passivation layer between III–V material and high-κ oxide in the application of high mobility devices.

In-situ Transmission Electron Microscopy and Spectroscopy Studies of Interfaces in Li-ion Batteries: Challenges and Opportunities

International Nuclear Information System (INIS)

Wang, Chong M.; Xu, Wu; Liu, Jun; Choi, Daiwon; Arey, Bruce W.; Saraf, Laxmikant V.; Zhang, Jiguang; Yang, Zhenguo; Thevuthasan, Suntharampillai; Baer, Donald R.; Salmon, Norman

2010-01-01

The critical challenge facing the lithium ion battery development is the basic understanding of the structural evolution during the cyclic operation of the battery and the consequence of the structural evolution on the properties of the battery. Although transmission electron microscopy (TEM) and spectroscopy have been evolved to a stage such that it can be routinely used to probe into both the structural and chemical composition of the materials with a spatial resolution of a single atomic column, a direct in-situ TEM observation of structural evolution of the materials in lithium ion battery during the dynamic operation of the battery has never been reported. This is related to three factors: high vacuum operation of a TEM; electron transparency requirement of the region to be observed, and the difficulties dealing with the liquid electrolyte of lithium ion battery. In this paper, we report the results of exploring the in-situ TEM techniques for observation of the interface in lithium ion battery during the operation of the battery. A miniature battery was fabricated using a nanowire and an ionic liquid electrolyte. The structure and chemical composition of the interface across the anode and the electrolyte was studied using TEM imaging, electron diffraction, and electron energy loss spectroscopy. In addition, we also explored the possibilities of carrying out in-situ TEM studies of lithium ion batteries with a solid state electrolyte.

Atomic and electronic structure of a copper/graphene interface as prepared and 1.5 years after

Science.gov (United States)

Boukhvalov, D. W.; Bazylewski, P. F.; Kukharenko, A. I.; Zhidkov, I. S.; Ponosov, Yu. S.; Kurmaev, E. Z.; Cholakh, S. O.; Lee, Y. H.; Chang, G. S.

2017-12-01

We report the results of X-ray spectroscopy and Raman measurements of as-prepared graphene on a high quality copper surface and the same materials after 1.5 years under different conditions (ambient and low humidity). The obtained results were compared with density functional theory calculations of the formation energies and electronic structures of various structural defects in graphene/Cu interfaces. For evaluation of the stability of the carbon cover, we propose a two-step model. The first step is oxidation of the graphene, and the second is perforation of graphene with the removal of carbon atoms as part of the carbon dioxide molecule. Results of the modeling and experimental measurements provide evidence that graphene grown on high-quality copper substrate becomes robust and stable in time (1.5 years). However, the stability of this interface depends on the quality of the graphene and the number of native defects in the graphene and substrate. The effect of the presence of a metallic substrate with defects on the stability and electronic structure of graphene is also discussed

Interface structure and stabilization of metastable B2-FeSi/Si(111) studied with low-energy electron diffraction and density functional theory

International Nuclear Information System (INIS)

Walter, S; Blobner, F; Krause, M; Mueller, S; Heinz, K; Starke, U

2003-01-01

We present a combined experimental and theoretical investigation of the interface between a B2-type FeSi film and Si(111). Using an ultra-thin B2-FeSi film grown on Si(111), the interface is still reached by electrons, so quantitative low-energy electron diffraction (LEED) could be applied to determine the bonding geometry experimentally. As a result, the local configuration at the shallow buried interface is characterized by near-substrate Fe atoms being 8-fold coordinated to Si atoms and by the silicide unit cell being rotated by 180 deg. with respect to the Si unit cell (B8 configuration). The interface energetics were explored by total-energy calculations using density functional theory (DFT). The B8-type interface proves to be the most stable one, consistent with the experimental findings. The atomic geometries obtained experimentally (LEED) and theoretically (DFT) agree within the limits of errors. Additionally, the calculations explain the stabilization of the B2 phase, which is unstable as bulk material: the analysis of the elastic behaviour reveals a reversed energy hierarchy of B2 and the bulk stable B20 phase when epitaxial growth on Si(111) is enforced

Electron transfer reactions to probe the electrode/solution interface

Energy Technology Data Exchange (ETDEWEB)

Capitanio, F.; Guerrini, E.; Colombo, A.; Trasatti, S. [Milan Univ., Milan (Italy). Dept. of Physical Chemistry and Electrochemistry

2008-07-01

The reactions that occur at the interface between an electrode and an electrolyte were examined with particular reference to the interaction of different electrode surfaces with redox couples. A semi-integration or convolution technique was used to study the kinetics of electron transfer on different electrode materials with different hydrophilic behaviour, such as Boron-Doped-Diamond (BDD), Au and Pt. Standard reversible redox couples were also investigated, including (Fe3+/2+, Fe(CN)63-/4-, Ru(NH3)63+/2+, Co(NH3)63+/2+, Ir4+/3+, V4+/5+ and V3+/2+). The proposed method proved to be simple, straightforward and reliable since the obtained kinetic information was in good agreement with data in the literature. It was concluded that the kinetics of the electrode transfer reactions depend on the chemical nature of the redox couple and electrode material. The method should be further extended to irreversible couples and other electrode materials such as mixed oxide electrodes. 3 refs., 2 figs.

UV photon and low-energy (5--150 eV) electron-stimulated processes at environmental interfaces

International Nuclear Information System (INIS)

Orlando, T.M.

1997-01-01

Irradiation of surfaces and interfaces with low-energy (5--150 eV) electrons and ultraviolet photons occurs during the storage of ''mixed'' (chemical/radioactive) waste forms and during processing steps which involve the use of low temperature plasmas. It is well known that electron- and photon-stimulated desorption (ESD and PSD) from wide band-gap materials and interfaces can be initiated by Auger decay of deep valence and shallow core holes. This process consists of hole production, Auger decay, reversal of the Madelung potential, and ion expulsion due to the Coulomb repulsion. ESD and PSD of neutrals also occurs and involves production of electron-hole pairs and excitons. Generally, neutral yields dominate ESD and PSD cross sections, which typically vary between ∼10 -16 and 10 -22 cm 2 . The authors present results on the ESD and PSD of environmentally relevant substrates such as ZrO 2 (100), soda-glass, and NaNO 3 . The major cation thresholds and yields indicate that ESD and PSD from these complex materials involves Auger stimulated events. In particular, desorption thresholds correlate with ionization of the O(2s), Zr(4p), Si(2p) and Na(2s) levels. The near band-gap threshold energy (∼5--7 eV) for the desorption of neutrals (i.e., atomic oxygen, NO, etc) demonstrate the overall importance of self-trapped and localized excitons in both ESD and PSD of typical ceramics and oxides

First-principles investigation of the effect of oxidation on the electronic structure and magnetic properties at the FeRh/MgO (0 0 1) interface

Energy Technology Data Exchange (ETDEWEB)

Sakhraoui, T., E-mail: tsakhrawi@yahoo.com [Laboratoire de la Matière Condensée et des Nanosciences, Département de Physique, Faculté des Sciences de Monastir, 5019 Monastir (Tunisia); Université de Strasbourg, CNRS, IPCMS, UMR 7504, F-67000 Strasbourg (France); Said, M. [Laboratoire de la Matière Condensée et des Nanosciences, Département de Physique, Faculté des Sciences de Monastir, 5019 Monastir (Tunisia); Alouani, M. [Université de Strasbourg, CNRS, IPCMS, UMR 7504, F-67000 Strasbourg (France)

2017-06-15

Highlights: • Density functional theory is used to study the interface between the FeRh alloy and MgO. • We focus on the effect of the oxidation on the electronic structure and magnetic properties of the FeRh/MgO (0 0 1) interface. • We show the change on the structure of the Fe-d states. • We examine the charge transfer and the local spin density modification after interface oxidation. - Abstract: The effect of interfacial oxidation on electronic structure and magnetic properties at the FeRh/MgO (0 0 1) interface is studied by ab initio methods. The results show the formation of an interfacial FeO-like layer between the FeRh and the MgO barrier, which has a direct impact on Fe e{sub g} states at the interface. It is shown that these e{sub g} states are more affected than that the t{sub 2g} states at the Fermi level due to the strong hybridization of these states with the p-states of oxygen. Thus, the oxidation modifies crucially the electronic structure and the magnetic properties as compared to those of an ideal interface. In particular, it was found that spin polarization of the ferromagnetic state is substantially enhanced. A simple two-current Julliere model shows that the TMR increases with oxidation.

Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures

Science.gov (United States)

Zhang, Yuewei; Neal, Adam; Xia, Zhanbo; Joishi, Chandan; Johnson, Jared M.; Zheng, Yuanhua; Bajaj, Sanyam; Brenner, Mark; Dorsey, Donald; Chabak, Kelson; Jessen, Gregg; Hwang, Jinwoo; Mou, Shin; Heremans, Joseph P.; Rajan, Siddharth

2018-04-01

In this work, we demonstrate a high mobility two-dimensional electron gas (2DEG) formed at the β-(AlxGa1-x)2O3/Ga2O3 interface through modulation doping. Shubnikov-de Haas (SdH) oscillations were observed in the modulation-doped β-(AlxGa1-x)2O3/Ga2O3 structure, indicating a high-quality electron channel formed at the heterojunction interface. The formation of the 2DEG channel was further confirmed by the weak temperature dependence of the carrier density, and the peak low temperature mobility was found to be 2790 cm2/Vs, which is significantly higher than that achieved in bulk-doped Beta-phase Gallium Oxide (β-Ga2O3). The observed SdH oscillations allowed for the extraction of the electron effective mass in the (010) plane to be 0.313 ± 0.015 m0 and the quantum scattering time to be 0.33 ps at 3.5 K. The demonstrated modulation-doped β-(AlxGa1-x)2O3/Ga2O3 structure lays the foundation for future exploration of quantum physical phenomena and semiconductor device technologies based on the β-Ga2O3 material system.

APST interfaces in LINCS

Energy Technology Data Exchange (ETDEWEB)

Fletcher, J.G.

1995-07-01

APST is an acronym for the four highest of the seven layers of the LINCS hierarchy of communication protocols: (from high to low) Application, Presentation, Session, and Transport. Routines in each but the lowest of these APST layers can utilize the facilities of any lower APST layer (normally, but not necessarily, the immediately next lower layer) by invoking various primitives (macros that in most cases are subroutine calls) defining the upper interface of the lower layer. So there are three APST interfaces: Presentation layer, used by the Application layer; Session layer, normally used by the Presentation layer; and Transport layer, normally used by the Session layer. Logically, each end of a stream (unidirectional sequence of transmitted information) is handled by three modules, one module each for the Presentation, Session, and Transport layers, and each of these modules deals with only that one end of that one stream. The internal workings of the layers, particularly the Transport layer, do not necessarily exhibit this same modularization; for example, the two oppositely directed streams between the same two ends (constituting an association) may interact within a layer. However, such interaction is an implementational detail of no direct interest to those utilizing the layer. The present document does not describe implementation, nor does it discuss in any detail how the modules employ packet headings and data formats to communicate with their partner modules at the other end of a stream. There being one logical module per end of stream is a characteristic only of the Presentation, Session, and Transport layers. An Application layer module usually manages several streams, orchestrating them to achieve some desired purpose. The modules of the layers (Network, Link, and Physical) below the APST layers each handle many streams, multiplexing them through the nodes and channels of the network to transmit them from their origins to their destinations.

UCTM2: An updated User friendly Configurable Trigger, scaler and delay Module for nuclear and particle physics

Energy Technology Data Exchange (ETDEWEB)

Bourrion, O., E-mail: olivier.bourrion@lpsc.in2p3.fr; Boyer, B.; Derome, L.; Pignol, G.

2016-06-11

We developed a highly integrated and versatile electronic module to equip small nuclear physics experiments and lab teaching classes: the User friendly Configurable Trigger, scaler and delay Module for nuclear and particle physics (UCTM). It is configurable through a Graphical User Interface (GUI) and provides a large number of possible trigger conditions without any Hardware Description Language (HDL) required knowledge. This new version significantly enhances the previous capabilities by providing two additional features: signal digitization and time measurements. The design, performances and a typical application are presented.

Electron transport due to inhomogeneous broadening and its potential impact on modulation speed in p-doped quantum dot lasers

International Nuclear Information System (INIS)

Deppe, D G; Freisem, S; Huang, H; Lipson, S

2005-01-01

Data are first presented on spontaneous and laser emission of p-doped and undoped quantum dot (QD) heterostructures to characterize the increase in optical gain in p-type modulation doped QD lasers. Because the increase in gain due to p-doping should also increase the differential gain, but does not greatly increase the modulation speed in present p-doped QD lasers, we further examine nonequilibrium electron transport effects in p-doped active material that may still limit the modulation speed. Electron transport through the dot wetting layer caused by the nonlasing QDs of the active ensemble is shown to be capable of substantially reducing the modulation speed, independent of the differential gain. This nonequilibrium limitation can be eliminated by reducing the inhomogeneous broadening in the QD ensemble

Ultrafast chemical interface scattering as an additional decay channel for nascent nonthermal electrons in small metal nanoparticles.

Science.gov (United States)

Bauer, Christophe; Abid, Jean-Pierre; Fermin, David; Girault, Hubert H

2004-05-15

The use of 4.2 nm gold nanoparticles wrapped in an adsorbates shell and embedded in a TiO2 metal oxide matrix gives the opportunity to investigate ultrafast electron-electron scattering dynamics in combination with electronic surface phenomena via the surface plasmon lifetimes. These gold nanoparticles (NPs) exhibit a large nonclassical broadening of the surface plasmon band, which is attributed to a chemical interface damping. The acceleration of the loss of surface plasmon phase coherence indicates that the energy and the momentum of the collective electrons can be dissipated into electronic affinity levels of adsorbates. As a result of the preparation process, gold NPs are wrapped in a shell of sulfate compounds that gives rise to a large density of interfacial molecules confined between Au and TiO2, as revealed by Fourier-transform-infrared spectroscopy. A detailed analysis of the transient absorption spectra obtained by broadband femtosecond transient absorption spectroscopy allows separating electron-electron and electron-phonon interaction. Internal thermalization times (electron-electron scattering) are determined by probing the decay of nascent nonthermal electrons (NNEs) and the build-up of the Fermi-Dirac electron distribution, giving time constants of 540 to 760 fs at 0.42 and 0.34 eV from the Fermi level, respectively. Comparison with literature data reveals that lifetimes of NNEs measured for these small gold NPs are more than four times longer than for silver NPs with similar sizes. The surprisingly long internal thermalization time is attributed to an additional decay mechanism (besides the classical e-e scattering) for the energy loss of NNEs, identified as the ultrafast chemical interface scattering process. NNEs experience an inelastic resonant scattering process into unoccupied electronic states of adsorbates, that directly act as an efficient heat bath, via the excitation of molecular vibrational modes. The two-temperature model is no longer

Motivation modulates the P300 amplitude during brain-computer interface use.

Science.gov (United States)

Kleih, S C; Nijboer, F; Halder, S; Kübler, A

2010-07-01

This study examined the effect of motivation as a possible psychological influencing variable on P300 amplitude and performance in a brain-computer interface (BCI) controlled by event-related potentials (ERP). Participants were instructed to copy spell a sentence by attending to cells of a randomly flashing 7*7 matrix. Motivation was manipulated by monetary reward. In two experimental groups participants received 25 (N=11) or 50 (N=11) Euro cent for each correctly selected character; the control group (N=11) was not rewarded. BCI performance was defined as the overall percentage of correctly selected characters (correct response rate=CRR). Participants performed at an average of 99%. At electrode location Cz the P300 amplitude was positively correlated to self-rated motivation. The P300 amplitude of the most motivated participants was significantly higher than that of the least motivated participants. Highly motivated participants were able to communicate correctly faster with the ERP-BCI than less motivated participants. Motivation modulates the P300 amplitude in an ERP-BCI. Motivation may contribute to variance in BCI performance and should be monitored in BCI settings. Copyright 2010 International Federation of Clinical Neurophysiology. Published by Elsevier Ireland Ltd. All rights reserved.

Interfaces and Communication Protocols in ATCA-Based LLRF Control Systems

Science.gov (United States)

Makowski, Dariusz; Koprek, Waldemar; Jezynski, Tomasz; Piotrowski, Adam; Jablonski, Grzegorz; Jalmuzna, Wojciech; Simrock, Stefan

2009-10-01

Linear accelerators driving Free Electron Lasers (FELs), such as the Free Electron Laser in Hamburg (FLASH) or the X-ray Free Electron Laser (XFEL), require sophisticated Low Level Radio Frequency (LLRF) control systems. The controller of the LLRF system should stabilize the phase and amplitude of the field in accelerating modules below 0.02% of the amplitude and 0.01 degree for phase tolerances to produce an ultra stable electron beam that meets the required conditions for Self-Amplified Spontaneous Emission (SASE). Since the LLRF system for the XFEL must be in operation for the next 20 years, it should be reliable, reproducible and upgradeable. Having in mind all requirements of the LLRF control system, the Advanced Telecommunications Computing Architecture (ATCA) has been chosen to build a prototype of the LLRF system for the FLASH accelerator that is able to supervise 32 cavities of one RF station. The LLRF controller takes advantage of features offered by the ATCA standard. The LLRF system consists of a few ATCA carrier blades, Rear Transition Modules (RTM) and several Advanced Mezzanine Cards (AMCs) that provide all necessary digital and analog hardware components. The distributed hardware of the LLRF system requires a number of communication links that should provide different latencies, bandwidths and protocols. The paper presents the general view of the ATC A-based LLRF system, discusses requirements and proposes an application for various interfaces and protocols in the distributed LLRF control system.

Prediction of a mobile two-dimensional electron gas at the LaSc O3 /BaSn O3 (001) interface

Science.gov (United States)

Paudel, Tula R.; Tsymbal, Evgeny Y.

2017-12-01

Two-dimensional electron gases (2DEG) at oxide interfaces, such as LaAl O3 /SrTi O3 (001), have aroused significant interest due to their high carrier density (˜1014c m-2 ) and strong lateral confinement (˜1 nm). However, these 2DEGs are normally hosted by the weakly dispersive and degenerate d bands (e.g., Ti -3 d bands), which are strongly coupled to the lattice, causing mobility of such 2DEGs to be relatively low at room temperature (˜1 c m2/Vs ). Here, we propose using oxide host materials with the conduction bands formed from s electrons to increase carrier mobility and soften its temperature dependence. Using first-principles density functional theory calculations, we investigate LaSc O3 /BaSn O3 (001) heterostructure and as a model system, where the conduction band hosts the s -like carriers. We find that the polar discontinuity at this interface leads to electronic reconstruction resulting in the formation of the 2DEG at this interface. The conduction electrons reside in the highly dispersive Sn -5 s bands, which have a large band width and a low effective mass. The predicted 2DEG is expected to be highly mobile even at room temperature due to the reduced electron-phonon scattering via the inter-band scattering channel. A qualitatively similar behavior is predicted for a doped BaSn O3 , where a monolayer of BaO is replaced with LaO. We anticipate that the quantum phenomena associated with these 2DEGs to be more pronounced owing to the high mobility of the carriers.

Room-temperature mobility above 2200 cm{sup 2}/V·s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure

Energy Technology Data Exchange (ETDEWEB)

Chen, Jr-Tai, E-mail: jrche@ifm.liu.se; Persson, Ingemar; Nilsson, Daniel; Hsu, Chih-Wei; Palisaitis, Justinas; Forsberg, Urban; Persson, Per O. Å.; Janzén, Erik [Department of Physics, Chemistry, and Biology, Linköping University, SE 581 83 Linköping (Sweden)

2015-06-22

A high mobility of 2250 cm{sup 2}/V·s of a two-dimensional electron gas (2DEG) in a metalorganic chemical vapor deposition-grown AlGaN/GaN heterostructure was demonstrated. The mobility enhancement was a result of better electron confinement due to a sharp AlGaN/GaN interface, as confirmed by scanning transmission electron microscopy analysis, not owing to the formation of a traditional thin AlN exclusion layer. Moreover, we found that the electron mobility in the sharp-interface heterostructures can sustain above 2000 cm{sup 2}/V·s for a wide range of 2DEG densities. Finally, it is promising that the sharp-interface AlGaN/GaN heterostructure would enable low contact resistance fabrication, less impurity-related scattering, and trapping than the AlGaN/AlN/GaN heterostructure, as the high-impurity-contained AlN is removed.

Interfacial Energy Alignment at the ITO/Ultra-Thin Electron Selective Dielectric Layer Interface and Its Effect on the Efficiency of Bulk-Heterojunction Organic Solar Cells.

Science.gov (United States)

Itoh, Eiji; Goto, Yoshinori; Saka, Yusuke; Fukuda, Katsutoshi

2016-04-01

We have investigated the photovoltaic properties of an inverted bulk heterojunction (BHJ) cell in a device with an indium-tin-oxide (ITO)/electron selective layer (ESL)/P3HT:PCBM active layer/MoOx/Ag multilayered structure. The insertion of only single layer of poly(diallyl-dimethyl-ammonium chloride) (PDDA) cationic polymer film (or poly(ethyleneimine) (PEI) polymeric interfacial dipole layer) and titanium oxide nanosheet (TN) films as an ESL effectively improved cell performance. Abnormal S-shaped curves were observed in the inverted BHJ cells owing to the contact resistance across the ITO/active layer interface and the ITO/PDDA/TN/active layer interface. The series resistance across the ITO/ESL interface in the inverted BHJ cell was successfully reduced using an interfacial layer with a positively charged surface potential with respect to ITO base electrode. The positive dipole in PEI and the electronic charge phenomena at the electrophoretic deposited TN (ED-TN) films on ITO contributed to the reduction of the contact resistance at the electrode interface. The surface potential measurement revealed that the energy alignment by the transfer of electronic charges from the ED-TN to the base electrodes. The insertion of the ESL with a large positive surface potential reduced the potential barrier for the electron injection at ITO/TN interface and it improved the photovoltaic properties of the inverted cell with an ITO/TN/active layer/MoOx/Ag structure.

Polarization-Insensitive Surface Plasmon Polarization Electro-Absorption Modulator Based on Epsilon-Near-Zero Indium Tin Oxide

Science.gov (United States)

Jin, Lin; Wen, Long; Liang, Li; Chen, Qin; Sun, Yunfei

2018-02-01

CMOS-compatible plasmonic modulators operating at the telecom wavelength are significant for a variety of on-chip applications. Relying on the manipulation of the transverse magnetic (TM) mode excited on the metal-dielectric interface, most of the previous demonstrations are designed to response only for specific polarization state. In this case, it will lead to a high polarization dependent loss, when the polarization-sensitive modulator integrates to a fiber with random polarization state. Herein, we propose a plasmonic modulator utilizing a metal-oxide indium tin oxide (ITO) wrapped around the silicon waveguide and investigate its optical modulation ability for both the vertical and horizontal polarized guiding light by tuning electro-absorption of ITO with the field-induced carrier injection. The electrically biased modulator with electron accumulated at the ITO/oxide interface allows for epsilon-near-zero (ENZ) mode to be excited at the top or lateral portion of the interface depending on the polarization state of the guiding light. Because of the high localized feature of ENZ mode, efficient electro-absorption can be achieved under the "OFF" state of the device, thus leading to large extinction ratio (ER) for both polarizations in our proposed modulator. Further, the polarization-insensitive modulation is realized by properly tailoring the thickness of oxide in two different stacking directions and therefore matching the ER values for device operating at vertical and horizontal polarized modes. For the optimized geometry configuration, the difference between the ER values of two polarization modes, i.e., the ΔER, as small as 0.01 dB/μm is demonstrated and, simultaneously with coupling efficiency above 74%, is obtained for both polarizations at a wavelength of 1.55 μm. The proposed plasmonic-combined modulator has a potential application in guiding and processing of light from a fiber with a random polarization state.

Development of intergrated accident management assessment technology; development of interface modules of risk-monitoring system

Energy Technology Data Exchange (ETDEWEB)

Kang, S. K.; Park, S. K.; Seok, H.; Kim, D. K.; Han, J. K.; Park, B. R. [KOPEC, Taejeon (Korea)

2002-03-01

Based on the development of interface modules with FORTE.- DynaRM can quantify risk model very fast (Very frequent risk model quantification is needed for configuration risk management).- risk monitoring system technology transfer to foreign NPPs. Contribution to component failure and maintenance control automation with the development of Tagging control System. On-Line risk monitoring system development by joint team between Korea Atomic Energy Research Institute and KOPEC is a request by KEPCO. The softwares developed in this study is easily implemented at domestic NPPs without extra study or cost. Economic benefit and Software export to foreign NPPs are expected because of the development of technology related to risk monitoring system and its management. 6 refs., 3 figs., 1 tab. (Author)

1-Dimensional Analysis of Ultrasound at Closed Interface of Solid

International Nuclear Information System (INIS)

Yamawaki, H

2014-01-01

As a first step to investigate mechanism of nonlinear ultrasonic generation at closed cracks, computer simulation for ultrasonic propagation in 1 -dimensional solid including closed interface was examined using Improved-FDM. Fundamental calculation model which described interaction between open / closure motion of the interface and ultrasonic stress was developed. In the model, compression stress is distributed over the entire solid, as motive force for closure of the interface. The interface is exhibited by the small region, and its open / closure are determined using calculated strain of the region. As a result, motion of the interface causing generation of saw-tooth like displacement waveform was observed. Amplitude modulation of displacement waveform was also observed, and it indicated possibility that small fluctuation of open / closure timing caused the modulation of the amplitude

Variation of carrier concentration and interface trap density in 8MeV electron irradiated c-Si solar cells

Energy Technology Data Exchange (ETDEWEB)

Bhat, Sathyanarayana, E-mail: asharao76@gmail.com; Rao, Asha, E-mail: asharao76@gmail.com [Department of Physics, Mangalore Institute of Technology and Engineering, Moodabidri, Mangalore-574225 (India); Krishnan, Sheeja [Department of Physics, Sri Devi Institute of Technology, Kenjar, Mangalore-574142 (India); Sanjeev, Ganesh [Microtron Centre, Department of Physics, Mangalore University, Mangalagangothri-574199 (India); Suresh, E. P. [Solar Panel Division, ISRO Satellite Centre, Bangalore-560017 (India)

2014-04-24

The capacitance and conductance measurements were carried out for c-Si solar cells, irradiated with 8 MeV electrons with doses ranging from 5kGy – 100kGy in order to investigate the anomalous degradation of the cells in the radiation harsh environments. Capacitance – Voltage measurements indicate that there is a slight reduction in the carrier concentration upon electron irradiation due to the creation of radiation induced defects. The conductance measurement results reveal that the interface state densities and the trap time constant increases with electron dose due to displacement damages in c-Si solar cells.

Numerical study on the interaction between a modulated electron beam and a plasma

International Nuclear Information System (INIS)

Fukumasa, Osamu; Itatani, Ryohei.

1981-09-01

Interaction of a modulated electron beam with a plasma is calculated for unbounded and bounded electron beam-plasma systems, using the method of partial simulation. In the case of the unbounded system, deformation of the beam distribution function is occurred in relation to suppression of one wave by the other wave. While, in the case of the bounded system, occurrence of deformation depends on whether feedback effects of reflected beams are present or not. The findings are qualitatively in agreement with our experimental results [19]. (author)

Probing electronic and vibrational properties at the electrochemical interface using SFG spectroscopy: Methanol electro-oxidation on Pt(1 1 0)

Science.gov (United States)

Vidal, F.; Busson, B.; Tadjeddine, A.

2005-02-01

We report the study of methanol electro-oxidation on Pt(1 1 0) using infrared-visible sum-frequency generation (SFG) vibrational spectroscopy. The use of this technique enables to probe the vibrational and electronic properties of the interface simultaneously in situ. We have investigated the vibrational properties of the interface in the CO ads internal stretch spectral region (1700-2150 cm -1) over a wide range of potentials. The analysis of the evolution of the C-O stretch line shape, which is related to the interference between the vibrational and electronic parts of the non-linear response, with the potential allows us to show that the onset of bulk methanol oxidation corresponds to the transition from a negatively to a positively charged surface.

Interface characteristics of spin-on-dielectric SiO{sub x}-buffered passivation layers for AlGaN/GaN high electron mobility transistors

Energy Technology Data Exchange (ETDEWEB)

Ko, Pil-Seok; Park, Kyoung-Seok; Yoon, Yeo-Chang [Division of Electronics and Electrical Engineering, Dongguk University, 100-715 Seoul (Korea, Republic of); Sheen, Mi-Hyang [Department of Materials Science Engineering, Seoul National University, 151-742 Seoul (Korea, Republic of); Kim, Sam-Dong, E-mail: samdong@dongguk.edu [Division of Electronics and Electrical Engineering, Dongguk University, 100-715 Seoul (Korea, Republic of)

2015-08-31

To reveal the cause for significant enhancement of dc current performance of the AlGaN/GaN high electron mobility transistors (HEMTs) with the spin-on-dielectric (SOD) SiO{sub x}-buffered passivation structure compared to the conventional Si{sub 3}N{sub 4} passivation deposited by plasma-enhanced vapor deposition (PECVD), we characterized the passivation interfaces using the cross-sectional transmission electron microscopy, cathodoluminescence, capacitance–voltage (C–V) characterizations, and Hall-effect measurements. The interface state density of PECVD Si{sub 3}N{sub 4} passivation was in the range of 10{sup 12}–10{sup 13} cm{sup −2} eV{sup −1}, which is one-order higher than that of the SOD (10{sup 11}–10{sup 12} cm{sup −2} eV{sup −1}) as measured by C–V measurements from the metal–insulator–semiconductor capacitors. Higher density of effective oxide charge density (especially dominant contribution of ionic mobile charge) was also derived from the PECVD Si{sub 3}N{sub 4} passivation. A well-resolved reduction of the electron Hall mobility of the Si{sub 3}N{sub 4} passivation compared to that of the perhydropolysilazane SOD passivation, which can be due to the higher-density interface states and trap charges, can answer the relative dc current collapse of our HEMT devices. - Highlights: • Spin-on-dielectric (SOD)-buffered passivation for AlGaN/GaN HEMTs • Characterize the charge density and interface states using the C–V measurements • SOD-buffered passivation minimizes surface states at the interface. • DC performance of SOD-buffered structure is due to the interface characteristics.

Fabrication of CuInS2-sensitized solar cells via an improved SILAR process and its interface electron recombination.

Science.gov (United States)

Xu, Xueqing; Wan, Qingcui; Luan, Chunyan; Mei, Fengjiao; Zhao, Qian; An, Ping; Liang, Zhurong; Xu, Gang; Zapien, Juan Antonio

2013-11-13

Tetragonal CuInS2 (CIS) has been successfully deposited onto mesoporous TiO2 films by in-sequence growth of InxS and CuyS via a successive ionic layer absorption and reaction (SILAR) process and postdeposition annealing in sulfur ambiance. X-ray diffraction and Raman measurements showed that the obtained tetragonal CIS consisted of a chalcopyrite phase and Cu-Au ordering, which related with the antisite defect states. For a fixed Cu-S deposition cycle, an interface layer of β-In2S3 formed at the TiO2/CIS interface with suitable excess deposition of In-S. In the meantime, the content of the Cu-Au ordering phase decreased to a reasonable level. These facts resulted in the retardance of electron recombination in the cells, which is proposed to be dominated by electron transfer from the conduction band of TiO2 to the unoccupied defect states in CIS via exponentially distributed surface states. As a result, a relatively high efficiency of ~0.92% (V(oc) = 0.35 V, J(sc) = 8.49 mA cm(-2), and FF = 0.31) has been obtained. Last, but not least, with an overloading of the sensitizers, a decrease in the interface area between the sensitized TiO2 and electrolytes resulted in deceleration of hole extraction from CIS to the electrolytes, leading to a decrease in the fill factor of the solar cells. It is indicated that the unoccupied states in CIS with energy levels below EF0 of the TiO2 films play an important role in the interface electron recombination at low potentials and has a great influence on the fill factor of the solar cells.

Electronic characterization of LaAlO{sub 3}-SrTiO{sub 3} interfaces by scanning tunneling spectroscopy; Elektronische Charakterisierung von LaAlO{sub 3}-SrTiO{sub 3}-Grenzflaechen mittels Rastertunnelspektroskopie

Energy Technology Data Exchange (ETDEWEB)

Breitschaft, Martin

2010-10-22

When LaAlO{sub 3} is epitaxially grown on TiO{sub 2}-terminated SrTiO{sub 3}, an electrically conducting interface is generated. In this respect, the physical properties of the interface differ substantially from those of both LaAlO{sub 3} and SrTiO{sub 3}, which are electrically insulating in bulk form. This dissertation looks into the question of the microscopic structure of the conducting two-dimensional interface electron system. Comparing the electronic density of states of LaAlO{sub 3}-SrTiO{sub 3} interfaces measured by scanning tunneling spectroscopy with results of density functional theory, the interface electron system is found to be substantially coined by the hosting transition metal lattices. The comparison yields a detailed picture of the microscopic structure of the interface electron system. (orig.)

Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells

Science.gov (United States)

Reichel, Christian; Würfel, Uli; Winkler, Kristina; Schleiermacher, Hans-Frieder; Kohlstädt, Markus; Unmüssig, Moritz; Messmer, Christoph A.; Hermle, Martin; Glunz, Stefan W.

2018-01-01

In the last years, novel materials for the formation of electron-selective contacts on n-type crystalline silicon (c-Si) heterojunction solar cells were explored as an interfacial layer between the metal electrode and the c-Si wafer. Besides inorganic materials like transition metal oxides or alkali metal fluorides, also interfacial layers based on organic molecules with a permanent dipole moment are promising candidates to improve the contact properties. Here, the dipole effect plays an essential role in the modification of the interface and effective work function of the contact. The amino acids L-histidine, L-tryptophan, L-phenylalanine, glycine, and sarcosine, the nucleobase adenine, and the heterocycle 4-hydroxypyridine were investigated as dipole materials for an electron-selective contact on the back of p- and n-type c-Si with a metal electrode based on aluminum (Al). Furthermore, the effect of an added fluorosurfactant on the resulting contact properties was examined. The performance of n-type c-Si solar cells with a boron diffusion on the front was significantly increased when L-histidine and/or the fluorosurfactant was applied as a full-area back surface field. This improvement was attributed to the modification of the interface and the effective work function of the contact by the dipole material which was corroborated by numerical device simulations. For these solar cells, conversion efficiencies of 17.5% were obtained with open-circuit voltages (Voc) of 625 mV and fill factors of 76.3%, showing the potential of organic interface dipoles for silicon organic heterojunction solar cells due to their simple formation by solution processing and their low thermal budget requirements.

Modulated Magnetic Nanowires for Controlling Domain Wall Motion: Toward 3D Magnetic Memories

KAUST Repository

Ivanov, Yurii P.; Chuvilin, Andrey; Lopatin, Sergei; Kosel, Jü rgen

2016-01-01