Electron-electron interaction in Multiple Quantum Wells

Science.gov (United States)

Zybert, M.; Marchewka, M.; Tomaka, G.; Sheregii, E. M.

2012-07-01

The complex investigation of the magneto-transport effects in structures containing multiple quantum well (MQWs) based on the GaAs/AlGaAs-heterostructures has been performed. The MQWs investigated have different electron densities in QWs. The parameters of 2DEG in MQWs were determined from the data of the Integer Quantum Hall Effect (IQHE) and Shubnikov-de Haas oscillations (SdH) observed at low temperatures (0.6-4.2 K). The method of calculation of the electron states energies in MQWs has been developed which is based on the splitting of these states due to the exchange interaction (SAS-splitting, see D. Płoch et al., Phys. Rev. B 79 (2009) 195434) including the screening of this interaction. The IQHE and SdH observed in these multilayer structures with the third degree of freedom for electrons are interpreted from this.

Quantum Monte Carlo methods and strongly correlated electrons on honeycomb structures

Energy Technology Data Exchange (ETDEWEB)

Lang, Thomas C.

2010-12-16

In this thesis we apply recently developed, as well as sophisticated quantum Monte Carlo methods to numerically investigate models of strongly correlated electron systems on honeycomb structures. The latter are of particular interest owing to their unique properties when simulating electrons on them, like the relativistic dispersion, strong quantum fluctuations and their resistance against instabilities. This work covers several projects including the advancement of the weak-coupling continuous time quantum Monte Carlo and its application to zero temperature and phonons, quantum phase transitions of valence bond solids in spin-1/2 Heisenberg systems using projector quantum Monte Carlo in the valence bond basis, and the magnetic field induced transition to a canted antiferromagnet of the Hubbard model on the honeycomb lattice. The emphasis lies on two projects investigating the phase diagram of the SU(2) and the SU(N)-symmetric Hubbard model on the hexagonal lattice. At sufficiently low temperatures, condensed-matter systems tend to develop order. An exception are quantum spin-liquids, where fluctuations prevent a transition to an ordered state down to the lowest temperatures. Previously elusive in experimentally relevant microscopic two-dimensional models, we show by means of large-scale quantum Monte Carlo simulations of the SU(2) Hubbard model on the honeycomb lattice, that a quantum spin-liquid emerges between the state described by massless Dirac fermions and an antiferromagnetically ordered Mott insulator. This unexpected quantum-disordered state is found to be a short-range resonating valence bond liquid, akin to the one proposed for high temperature superconductors. Inspired by the rich phase diagrams of SU(N) models we study the SU(N)-symmetric Hubbard Heisenberg quantum antiferromagnet on the honeycomb lattice to investigate the reliability of 1/N corrections to large-N results by means of numerically exact QMC simulations. We study the melting of phases

Electron-electron interaction in p-SiGe/Ge quantum wells

International Nuclear Information System (INIS)

Roessner, Benjamin; Kaenel, Hans von; Chrastina, Daniel; Isella, Giovanni; Batlogg, Bertram

2005-01-01

The temperature dependent magnetoresistance of high mobility p-SiGe/Ge quantum wells is studied with hole densities ranging from 1.7 to 5.9 x 10 11 cm -2 . At magnetic fields below the onset of quantum oscillations that reflect the high mobility values (up to 75000 cm 2 /Vs), we observe the clear signatures of electron-electron interaction. We compare our experiment with the theory of electron-electron interaction including the Zeeman band splitting. The observed magnetoresistance is well explained as a superposition of band structure induced positive magnetoresistance and the negative magntoresistance due to the electron-electron interaction effect

First-principles study of the electronic structure of CdS/ZnSe coupled quantum dots

NARCIS (Netherlands)

Ganguli, N.; Acharya, S.; Dasgupta, I.

2014-01-01

We have studied the electronic structure of CdS/ZnSe coupled quantum dots, a novel heterostructure at the nanoscale. Our calculations reveal CdS/ZnSe coupled quantum dots are type II in nature where the anion p states play an important role in deciding the band offset for the highest occupied

Adaptation of quantum chemistry software for the electronic structure calculations on GPU for solid-state systems

International Nuclear Information System (INIS)

Gusakov, V.E.; Bel'ko, V.I.; Dorozhkin, N.N.

2015-01-01

We report on adaptation of quantum chemistry software - Quantum Espresso and LASTO - for the electronic structure calculations for the complex solid-state systems on the GeForce series GPUs using the nVIDIA CUDA technology. Specifically, protective covering based on transition metal nitrides are considered. (authors)

Electron interaction and spin effects in quantum wires, quantum dots and quantum point contacts: a first-principles mean-field approach

International Nuclear Information System (INIS)

Zozoulenko, I V; Ihnatsenka, S

2008-01-01

We have developed a mean-field first-principles approach for studying electronic and transport properties of low dimensional lateral structures in the integer quantum Hall regime. The electron interactions and spin effects are included within the spin density functional theory in the local density approximation where the conductance, the density, the effective potentials and the band structure are calculated on the basis of the Green's function technique. In this paper we present a systematic review of the major results obtained on the energetics, spin polarization, effective g factor, magnetosubband and edge state structure of split-gate and cleaved-edge overgrown quantum wires as well as on the conductance of quantum point contacts (QPCs) and open quantum dots. In particular, we discuss how the spin-resolved subband structure, the current densities, the confining potentials, as well as the spin polarization of the electron and current densities in quantum wires and antidots evolve when an applied magnetic field varies. We also discuss the role of the electron interaction and spin effects in the conductance of open systems focusing our attention on the 0.7 conductance anomaly in the QPCs. Special emphasis is given to the effect of the electron interaction on the conductance oscillations and their statistics in open quantum dots as well as to interpretation of the related experiments on the ultralow temperature saturation of the coherence time in open dots

Structural, electronic properties, and quantum capacitance of B, N and P-doped armchair carbon nanotubes

Energy Technology Data Exchange (ETDEWEB)

Mousavi-Khoshdel, S. Morteza, E-mail: mmousavi@iust.ac.ir [Department of Chemistry, Iran University of Science and Technology, Tehran (Iran, Islamic Republic of); Jahanbakhsh-bonab, Parisa [Department of Chemistry, Iran University of Science and Technology, Tehran (Iran, Islamic Republic of); Targholi, Ehsan [Young Researchers and Elite Club, Abhar Branch, Islamic Azad University, Abhar (Iran, Islamic Republic of)

2016-10-07

Using DFT calculations, we study the structural parameters, electronic properties and quantum capacitance of N, B, and P-doped armchair carbon nanotubes (CNTs). Fermi level shifts towards conduction band and valence band in N- and B-doped CNTs, respectively. While in the case of P atom, despite having an extra valence electron than carbon, there is no shift in Fermi level. The results revealed from a symmetric capacitance enhancement in P-doped CNT and an asymmetric capacitance enhancement in B and N-doped CNTs. The greatest amount of quantum capacitance of N-doped (6, 6) CNT could be achieved at the concentration range of 0.1–0.15. - Highlights: • Exploration of variation in quantum capacitance of CNTs through doping N, B and P atoms. • Quantum capacitance of CNTs is sensitive to impurities entered in carbon nanotubes. • Maximum quantum capacitance of N-doped CNTs is achieved at the concentration range of 0.1–0.15.

Electron states in semiconductor quantum dots

International Nuclear Information System (INIS)

Dhayal, Suman S.; Ramaniah, Lavanya M.; Ruda, Harry E.; Nair, Selvakumar V.

2014-01-01

In this work, the electronic structures of quantum dots (QDs) of nine direct band gap semiconductor materials belonging to the group II-VI and III-V families are investigated, within the empirical tight-binding framework, in the effective bond orbital model. This methodology is shown to accurately describe these systems, yielding, at the same time, qualitative insights into their electronic properties. Various features of the bulk band structure such as band-gaps, band curvature, and band widths around symmetry points affect the quantum confinement of electrons and holes. These effects are identified and quantified. A comparison with experimental data yields good agreement with the calculations. These theoretical results would help quantify the optical response of QDs of these materials and provide useful input for applications

Theory of the electronic structure and carrier dynamics of strain-induced (Ga, In)As quantum dots

International Nuclear Information System (INIS)

Boxberg, Fredrik; Tulkki, Jukka

2007-01-01

Strain-induced quantum dots (SIQD) confine electrons and holes to a lateral potential minimum within a near-surface quantum well (QW). The potential minimum is located in the QW below a nanometre-sized stressor crystal grown on top of the QW. SIQD exhibit well-resolved and prominently atomic-like optical spectra, making them ideal for experimental and theoretical studies of mesoscopic phenomena in semiconductor nanocrystals. In this report we review the theory of strain-induced confinement, electronic structure, photonics and carrier relaxation dynamics in SIQD. The theoretical results are compared with available experimental data. Electronic structure calculations are mainly performed using the multiband envelope function approach. Many-body effects are discussed using a direct diagonalization method, albeit, for the sake of computational feasibility, within a two-band model. The QD carrier dynamics are discussed in terms of a master equation model, which accounts for the details of the electronic structure as well as the leading photon, phonon and Coulomb interaction processes. We also discuss the quantum confined Stark effect, the Zeeman splitting and the formation of Landau levels in external fields. Finally, we review a recent theory of the cooling of radiative QD excitons by THz radiation. In particular we discuss the resonance charge transfer of holes between piezoelectric trap states and the deformation potential minima. The agreement between the theory and experiment is fair throughout, but calls for further investigations

Attosecond electron pulse trains and quantum state reconstruction in ultrafast transmission electron microscopy

Science.gov (United States)

Priebe, Katharina E.; Rathje, Christopher; Yalunin, Sergey V.; Hohage, Thorsten; Feist, Armin; Schäfer, Sascha; Ropers, Claus

2017-12-01

Ultrafast electron and X-ray imaging and spectroscopy are the basis for an ongoing revolution in the understanding of dynamical atomic-scale processes in matter. The underlying technology relies heavily on laser science for the generation and characterization of ever shorter pulses. Recent findings suggest that ultrafast electron microscopy with attosecond-structured wavefunctions may be feasible. However, such future technologies call for means to both prepare and fully analyse the corresponding free-electron quantum states. Here, we introduce a framework for the preparation, coherent manipulation and characterization of free-electron quantum states, experimentally demonstrating attosecond electron pulse trains. Phase-locked optical fields coherently control the electron wavefunction along the beam direction. We establish a new variant of quantum state tomography—`SQUIRRELS'—for free-electron ensembles. The ability to tailor and quantitatively map electron quantum states will promote the nanoscale study of electron-matter entanglement and new forms of ultrafast electron microscopy down to the attosecond regime.

Orientation-dependent imaging of electronically excited quantum dots

Science.gov (United States)

Nguyen, Duc; Goings, Joshua J.; Nguyen, Huy A.; Lyding, Joseph; Li, Xiaosong; Gruebele, Martin

2018-02-01

We previously demonstrated that we can image electronic excitations of quantum dots by single-molecule absorption scanning tunneling microscopy (SMA-STM). With this technique, a modulated laser beam periodically saturates an electronic transition of a single nanoparticle, and the resulting tunneling current modulation ΔI(x0, y0) maps out the SMA-STM image. In this paper, we first derive the basic theory to calculate ΔI(x0, y0) in the one-electron approximation. For near-resonant tunneling through an empty orbital "i" of the nanostructure, the SMA-STM signal is approximately proportional to the electron density |φi) (x0,y0)|nudge quantum dots on the surface and roll them, thus imaging excited state electronic structure of a single quantum dot at different orientations. We use density functional theory to model ODMs at various orientations, for qualitative comparison with the SMA-STM experiment. The model demonstrates that our experimentally observed signal monitors excited states, localized by defects near the surface of an individual quantum dot. The sub-nanometer super-resolution imaging technique demonstrated here could become useful for mapping out the three-dimensional structure of excited states localized by defects within nanomaterials.

Designs for a quantum electron microscope

Energy Technology Data Exchange (ETDEWEB)

Kruit, P., E-mail: p.kruit@tudelft.nl [Department of Imaging Physics, Delft University of Technology, Lorentzweg 1, 2628CJ Delft (Netherlands); Hobbs, R.G.; Kim, C-S.; Yang, Y.; Manfrinato, V.R. [Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Hammer, J.; Thomas, S.; Weber, P. [Department of Physics, Friedrich Alexander University Erlangen-Nürnberg (FAU), Staudtstrasse 1, d-91058 Erlangen (Germany); Klopfer, B.; Kohstall, C.; Juffmann, T.; Kasevich, M.A. [Department of Physics, Stanford University, Stanford, California 94305 (United States); Hommelhoff, P. [Department of Physics, Friedrich Alexander University Erlangen-Nürnberg (FAU), Staudtstrasse 1, d-91058 Erlangen (Germany); Berggren, K.K. [Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

2016-05-15

One of the astounding consequences of quantum mechanics is that it allows the detection of a target using an incident probe, with only a low probability of interaction of the probe and the target. This ‘quantum weirdness’ could be applied in the field of electron microscopy to generate images of beam-sensitive specimens with substantially reduced damage to the specimen. A reduction of beam-induced damage to specimens is especially of great importance if it can enable imaging of biological specimens with atomic resolution. Following a recent suggestion that interaction-free measurements are possible with electrons, we now analyze the difficulties of actually building an atomic resolution interaction-free electron microscope, or “quantum electron microscope”. A quantum electron microscope would require a number of unique components not found in conventional transmission electron microscopes. These components include a coherent electron beam-splitter or two-state-coupler, and a resonator structure to allow each electron to interrogate the specimen multiple times, thus supporting high success probabilities for interaction-free detection of the specimen. Different system designs are presented here, which are based on four different choices of two-state-couplers: a thin crystal, a grating mirror, a standing light wave and an electro-dynamical pseudopotential. Challenges for the detailed electron optical design are identified as future directions for development. While it is concluded that it should be possible to build an atomic resolution quantum electron microscope, we have also identified a number of hurdles to the development of such a microscope and further theoretical investigations that will be required to enable a complete interpretation of the images produced by such a microscope. - Highlights: • Quantum electron microscopy has the potential of reducing radiation damage. • QEM requires a fraction of the electron wave to pass through the sample

Designs for a quantum electron microscope

International Nuclear Information System (INIS)

Kruit, P.; Hobbs, R.G.; Kim, C-S.; Yang, Y.; Manfrinato, V.R.; Hammer, J.; Thomas, S.; Weber, P.; Klopfer, B.; Kohstall, C.; Juffmann, T.; Kasevich, M.A.; Hommelhoff, P.; Berggren, K.K.

2016-01-01

One of the astounding consequences of quantum mechanics is that it allows the detection of a target using an incident probe, with only a low probability of interaction of the probe and the target. This ‘quantum weirdness’ could be applied in the field of electron microscopy to generate images of beam-sensitive specimens with substantially reduced damage to the specimen. A reduction of beam-induced damage to specimens is especially of great importance if it can enable imaging of biological specimens with atomic resolution. Following a recent suggestion that interaction-free measurements are possible with electrons, we now analyze the difficulties of actually building an atomic resolution interaction-free electron microscope, or “quantum electron microscope”. A quantum electron microscope would require a number of unique components not found in conventional transmission electron microscopes. These components include a coherent electron beam-splitter or two-state-coupler, and a resonator structure to allow each electron to interrogate the specimen multiple times, thus supporting high success probabilities for interaction-free detection of the specimen. Different system designs are presented here, which are based on four different choices of two-state-couplers: a thin crystal, a grating mirror, a standing light wave and an electro-dynamical pseudopotential. Challenges for the detailed electron optical design are identified as future directions for development. While it is concluded that it should be possible to build an atomic resolution quantum electron microscope, we have also identified a number of hurdles to the development of such a microscope and further theoretical investigations that will be required to enable a complete interpretation of the images produced by such a microscope. - Highlights: • Quantum electron microscopy has the potential of reducing radiation damage. • QEM requires a fraction of the electron wave to pass through the sample

Quantum electronics basic theory

CERN Document Server

Fain, V M; Sanders, J H

1969-01-01

Quantum Electronics, Volume 1: Basic Theory is a condensed and generalized description of the many research and rapid progress done on the subject. It is translated from the Russian language. The volume describes the basic theory of quantum electronics, and shows how the concepts and equations followed in quantum electronics arise from the basic principles of theoretical physics. The book then briefly discusses the interaction of an electromagnetic field with matter. The text also covers the quantum theory of relaxation process when a quantum system approaches an equilibrium state, and explai

Electronic structure and lattice relaxations in quantum confined Pb films

NARCIS (Netherlands)

Mans, A.

2005-01-01

Epitaxial films that are only several atoms layers thick exhibit interesting properties associated with quantum confinement. The electrons form standing waves, just like a violin string, clamped at both ends. In ultrathin lead films, this so-called `quantum size effect' (QSE) alters the physical

Analysis of quantum semiconductor heterostructures by ballistic electron emission spectroscopy

Science.gov (United States)

Guthrie, Daniel K.

1998-09-01

The microelectronics industry is diligently working to achieve the goal of gigascale integration (GSI) by early in the 21st century. For the past twenty-five years, progress toward this goal has been made by continually scaling down device technology. Unfortunately, this trend cannot continue to the point of producing arbitrarily small device sizes. One possible solution to this problem that is currently under intensive study is the relatively new area of quantum devices. Quantum devices represent a new class of microelectronic devices that operate by utilizing the wave-like nature (reflection, refraction, and confinement) of electrons together with the laws of quantum mechanics to construct useful devices. One difficulty associated with these structures is the absence of measurement techniques that can fully characterize carrier transport in such devices. This thesis addresses this need by focusing on the study of carrier transport in quantum semiconductor heterostructures using a relatively new and versatile measurement technique known as ballistic electron emission spectroscopy (BEES). To achieve this goal, a systematic approach that encompasses a set of progressively more complex structures is utilized. First, the simplest BEES structure possible, the metal/semiconductor interface, is thoroughly investigated in order to provide a foundation for measurements on more the complex structures. By modifying the semiclassical model commonly used to describe the experimental BEES spectrum, a very complete and accurate description of the basic structure has been achieved. Next, a very simple semiconductor heterostructure, a Ga1-xAlxAs single-barrier structure, was measured and analyzed. Low-temperature measurements on this structure were used to investigate the band structure and electron-wave interference effects in the Ga1-xAlxAs single barrier structure. These measurements are extended to a simple quantum device by designing, measuring, and analyzing a set of

Designs for a quantum electron microscope.

Science.gov (United States)

Kruit, P; Hobbs, R G; Kim, C-S; Yang, Y; Manfrinato, V R; Hammer, J; Thomas, S; Weber, P; Klopfer, B; Kohstall, C; Juffmann, T; Kasevich, M A; Hommelhoff, P; Berggren, K K

2016-05-01

One of the astounding consequences of quantum mechanics is that it allows the detection of a target using an incident probe, with only a low probability of interaction of the probe and the target. This 'quantum weirdness' could be applied in the field of electron microscopy to generate images of beam-sensitive specimens with substantially reduced damage to the specimen. A reduction of beam-induced damage to specimens is especially of great importance if it can enable imaging of biological specimens with atomic resolution. Following a recent suggestion that interaction-free measurements are possible with electrons, we now analyze the difficulties of actually building an atomic resolution interaction-free electron microscope, or "quantum electron microscope". A quantum electron microscope would require a number of unique components not found in conventional transmission electron microscopes. These components include a coherent electron beam-splitter or two-state-coupler, and a resonator structure to allow each electron to interrogate the specimen multiple times, thus supporting high success probabilities for interaction-free detection of the specimen. Different system designs are presented here, which are based on four different choices of two-state-couplers: a thin crystal, a grating mirror, a standing light wave and an electro-dynamical pseudopotential. Challenges for the detailed electron optical design are identified as future directions for development. While it is concluded that it should be possible to build an atomic resolution quantum electron microscope, we have also identified a number of hurdles to the development of such a microscope and further theoretical investigations that will be required to enable a complete interpretation of the images produced by such a microscope. Copyright © 2016 The Authors. Published by Elsevier B.V. All rights reserved.

Transmission electron microscopy investigations of the CdSe based quantum structures

Energy Technology Data Exchange (ETDEWEB)

Roventa, E.

2006-09-22

In this work, the structural morphology of the active region of the ZnSe laser diode: quaternary CdZnSSe quantum well or CdSe quantum dots embedded in CdSe/ZnSSe superlattices is investigated using Transmission Electron Microscopy. The conventional as well as high resolution imaging studies indicated that the degradation of the ZnSe laser diodes is connected with the formation of extended defects in the optical active region leading to a local strain relaxation of the quantum well. Furthermore the outdiffusion of Cd from the quantum well occurs predominantly where the defects are located. The chemical composition and ordering phenomena in CdSe/ZnSSe supperlattices were also investigated, employing a series of five-fold structures with different spacer layer thickness and a ten-fold structure. The composition in the CdSe/ZnSSe superlattice was determined to a certain extent using different techniques. Generally, the encountered difficulties regarding the accuracy of the obtained values are correlated with the complexity of the investigated system and with the available experimental methods used. Regarding the alignment of the dots, experimental results support a strain driven ordering process, in which the strain fields from buried dots lead to heterogeneous nucleation conditions for the dots in the subsequently deposited layers. An increased ordering with subsequent stacking of the dot layers is was also found. An anisotropy of the lateral alignment of the CdSe dots was also observed in two different left angle 110 right angle zone axes. The similar plan-view images shows that the preferential alignment of the dots does not follow low-index crystallographic directions. However, it is assumed that this is attributed to the anisotropic elastic strain distribution combined with surface diffusion. (orig.)

Transmission electron microscopy investigations of the CdSe based quantum structures

International Nuclear Information System (INIS)

Roventa, E.

2006-01-01

In this work, the structural morphology of the active region of the ZnSe laser diode: quaternary CdZnSSe quantum well or CdSe quantum dots embedded in CdSe/ZnSSe superlattices is investigated using Transmission Electron Microscopy. The conventional as well as high resolution imaging studies indicated that the degradation of the ZnSe laser diodes is connected with the formation of extended defects in the optical active region leading to a local strain relaxation of the quantum well. Furthermore the outdiffusion of Cd from the quantum well occurs predominantly where the defects are located. The chemical composition and ordering phenomena in CdSe/ZnSSe supperlattices were also investigated, employing a series of five-fold structures with different spacer layer thickness and a ten-fold structure. The composition in the CdSe/ZnSSe superlattice was determined to a certain extent using different techniques. Generally, the encountered difficulties regarding the accuracy of the obtained values are correlated with the complexity of the investigated system and with the available experimental methods used. Regarding the alignment of the dots, experimental results support a strain driven ordering process, in which the strain fields from buried dots lead to heterogeneous nucleation conditions for the dots in the subsequently deposited layers. An increased ordering with subsequent stacking of the dot layers is was also found. An anisotropy of the lateral alignment of the CdSe dots was also observed in two different left angle 110 right angle zone axes. The similar plan-view images shows that the preferential alignment of the dots does not follow low-index crystallographic directions. However, it is assumed that this is attributed to the anisotropic elastic strain distribution combined with surface diffusion. (orig.)

Quantum interference effects for the electronic fluctuations in quantum dots

Energy Technology Data Exchange (ETDEWEB)

Ramos, J.G.G.S. [Universidade Federal da Paraiba (UFPB), Rio Tinto, PB (Brazil). Departamento de Ciencias Exatas; Hussein, M.S. [Universidade de Sao Paulo (USP), SP (Brazil). Instituto de Fisica; Barbosa, A.L.R. [Universidade Federal Rural de Pernambuco (UAEADTec/UFRPE), Recife, PE (Brazil). Unidade Academica de Ensino a Distancia. Pos-Graduacao em Fisica Aplicada

2014-07-01

For the main quantum interference term of coherent electronic transport, we study the effect of temperature, perpendicular and/or parallel magnetic fields, spin-orbit coupling and tunneling rates in both metallic grains and mesoscopic heterostructures. We show that the Zeeman effects determines a crucial way to characterize the quantum interference phenomena of the noise for anisotropic systems (mesoscopic heterostructures), qualitatively distinct from those observed in isotropic structures (metallic grains). (author)

Quantum interference effects for the electronic fluctuations in quantum dots

International Nuclear Information System (INIS)

Ramos, J.G.G.S.; Hussein, M.S.; Barbosa, A.L.R.

2014-01-01

For the main quantum interference term of coherent electronic transport, we study the effect of temperature, perpendicular and/or parallel magnetic fields, spin-orbit coupling and tunneling rates in both metallic grains and mesoscopic heterostructures. We show that the Zeeman effects determines a crucial way to characterize the quantum interference phenomena of the noise for anisotropic systems (mesoscopic heterostructures), qualitatively distinct from those observed in isotropic structures (metallic grains). (author)

InN/GaN quantum dot superlattices: Charge-carrier states and surface electronic structure

Science.gov (United States)

Kanouni, F.; Brezini, A.; Djenane, M.; Zou, Q.

2018-03-01

We have theoretically investigated the electron energy spectra and surface states energy in the three dimensionally ordered quantum dot superlattices (QDSLs) made of InN and GaN semiconductors. The QDSL is assumed in this model to be a matrix of GaN containing cubic dots of InN of the same size and uniformly distributed. For the miniband’s structure calculation, the resolution of the effective mass Schrödinger equation is done by decoupling it in the three directions within the framework of Kronig-Penney model. We found that the electrons minibands in infinite ODSLs are clearly different from those in the conventional quantum-well superlattices. The electrons localization and charge-carrier states are very dependent on the quasicrystallographic directions, the size and the shape of the dots which play a role of the artificial atoms in such QD supracrystal. The energy spectrum of the electron states localized at the surface of InN/GaN QDSL is represented by Kronig-Penney like-model, calculated via direct matching procedure. The calculation results show that the substrate breaks symmetrical shape of QDSL on which some localized electronic surface states can be produced in minigap regions. Furthermore, we have noticed that the surface states degeneracy is achieved in like very thin bands located in the minigaps, identified by different quantum numbers nx, ny, nz. Moreover, the surface energy bands split due to the reduction of the symmetry of the QDSL in z-direction.

Graph-based linear scaling electronic structure theory

Energy Technology Data Exchange (ETDEWEB)

Niklasson, Anders M. N., E-mail: amn@lanl.gov; Negre, Christian F. A.; Cawkwell, Marc J.; Swart, Pieter J.; Germann, Timothy C.; Bock, Nicolas [Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Mniszewski, Susan M.; Mohd-Yusof, Jamal; Wall, Michael E.; Djidjev, Hristo [Computer, Computational, and Statistical Sciences Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Rubensson, Emanuel H. [Division of Scientific Computing, Department of Information Technology, Uppsala University, Box 337, SE-751 05 Uppsala (Sweden)

2016-06-21

We show how graph theory can be combined with quantum theory to calculate the electronic structure of large complex systems. The graph formalism is general and applicable to a broad range of electronic structure methods and materials, including challenging systems such as biomolecules. The methodology combines well-controlled accuracy, low computational cost, and natural low-communication parallelism. This combination addresses substantial shortcomings of linear scaling electronic structure theory, in particular with respect to quantum-based molecular dynamics simulations.

Antiresonance and decoupling in electronic transport through parallel-coupled quantum-dot structures with laterally-coupled Majorana zero modes

Science.gov (United States)

Zhang, Ya-Jing; Zhang, Lian-Lian; Jiang, Cui; Gong, Wei-Jiang

2018-02-01

We theoretically investigate the electronic transport through a parallel-coupled multi-quantum-dot system, in which the terminal dots of a one-dimensional quantum-dot chain are embodied in the two arms of an Aharonov-Bohm interferometer. It is found that in the structures of odd(even) dots, all their even(odd) molecular states have opportunities to decouple from the leads, and in this process antiresonance occurs which are accordant with the odd(even)-numbered eigenenergies of the sub-molecule without terminal dots. Next when Majorana zero modes are introduced to couple laterally to the terminal dots, the antiresonance and decoupling phenomena still co-exist in the quantum transport process. Such a result can be helpful in understanding the special influence of Majorana zero mode on the electronic transport through quantum-dot systems.

Correlated electron phenomena in ultra-low disorder quantum wires

International Nuclear Information System (INIS)

Reilly, D.J.; Facer, G.R.; Dzurak, A.S.; Kane, B.E.; Clark, R.G.; Lumpkin, N.E.

1999-01-01

Full text: Quantum point contacts in the lowest disorder HEMTs display structure at 0.7 x 2e 2 /h, which cannot be interpreted within a single particle Landauer model. This structure has been attributed to a spontaneous spin polarisation at zero B field. We have developed novel GaAs/AlGaAs enhancement mode FETs, which avoid the random impurity potential present in conventional MODFET devices by using epitaxially grown gates to produce ultra-low-disorder QPCs and quantum wires using electron beam lithography. The ballistic mean free path within these devices exceeds 160 μm 2 . Quantum wires of 5 μm in length show up to 15 conductance plateaux, indicating that these may be the lowest-disorder quantum wires fabricated using conventional surface patterning techniques. These structures are ideal for the study of correlation effects in QPCs and quantum wires as a function of electron density. Our data provides strong evidence that correlation effects are enhanced as the length of the 1D region is increased and also that additional structure moves close to 0.5 x 2e 2 /h, the value expected for an ideal spin-split 1D level

On the applicability of one- and many-electron quantum chemistry models for hydrated electron clusters

Science.gov (United States)

Turi, László

2016-04-01

We evaluate the applicability of a hierarchy of quantum models in characterizing the binding energy of excess electrons to water clusters. In particular, we calculate the vertical detachment energy of an excess electron from water cluster anions with methods that include one-electron pseudopotential calculations, density functional theory (DFT) based calculations, and ab initio quantum chemistry using MP2 and eom-EA-CCSD levels of theory. The examined clusters range from the smallest cluster size (n = 2) up to nearly nanosize clusters with n = 1000 molecules. The examined cluster configurations are extracted from mixed quantum-classical molecular dynamics trajectories of cluster anions with n = 1000 water molecules using two different one-electron pseudopotenial models. We find that while MP2 calculations with large diffuse basis set provide a reasonable description for the hydrated electron system, DFT methods should be used with precaution and only after careful benchmarking. Strictly tested one-electron psudopotentials can still be considered as reasonable alternatives to DFT methods, especially in large systems. The results of quantum chemistry calculations performed on configurations, that represent possible excess electron binding motifs in the clusters, appear to be consistent with the results using a cavity structure preferring one-electron pseudopotential for the hydrated electron, while they are in sharp disagreement with the structural predictions of a non-cavity model.

On the applicability of one- and many-electron quantum chemistry models for hydrated electron clusters

Energy Technology Data Exchange (ETDEWEB)

Turi, László, E-mail: turi@chem.elte.hu [Department of Physical Chemistry, Eötvös Loránd University, P.O. Box 32, H-1518 Budapest 112 (Hungary)

2016-04-21

We evaluate the applicability of a hierarchy of quantum models in characterizing the binding energy of excess electrons to water clusters. In particular, we calculate the vertical detachment energy of an excess electron from water cluster anions with methods that include one-electron pseudopotential calculations, density functional theory (DFT) based calculations, and ab initio quantum chemistry using MP2 and eom-EA-CCSD levels of theory. The examined clusters range from the smallest cluster size (n = 2) up to nearly nanosize clusters with n = 1000 molecules. The examined cluster configurations are extracted from mixed quantum-classical molecular dynamics trajectories of cluster anions with n = 1000 water molecules using two different one-electron pseudopotenial models. We find that while MP2 calculations with large diffuse basis set provide a reasonable description for the hydrated electron system, DFT methods should be used with precaution and only after careful benchmarking. Strictly tested one-electron psudopotentials can still be considered as reasonable alternatives to DFT methods, especially in large systems. The results of quantum chemistry calculations performed on configurations, that represent possible excess electron binding motifs in the clusters, appear to be consistent with the results using a cavity structure preferring one-electron pseudopotential for the hydrated electron, while they are in sharp disagreement with the structural predictions of a non-cavity model.

QMCPACK: an open source ab initio quantum Monte Carlo package for the electronic structure of atoms, molecules and solids

Science.gov (United States)

Kim, Jeongnim; Baczewski, Andrew D.; Beaudet, Todd D.; Benali, Anouar; Chandler Bennett, M.; Berrill, Mark A.; Blunt, Nick S.; Josué Landinez Borda, Edgar; Casula, Michele; Ceperley, David M.; Chiesa, Simone; Clark, Bryan K.; Clay, Raymond C., III; Delaney, Kris T.; Dewing, Mark; Esler, Kenneth P.; Hao, Hongxia; Heinonen, Olle; Kent, Paul R. C.; Krogel, Jaron T.; Kylänpää, Ilkka; Li, Ying Wai; Lopez, M. Graham; Luo, Ye; Malone, Fionn D.; Martin, Richard M.; Mathuriya, Amrita; McMinis, Jeremy; Melton, Cody A.; Mitas, Lubos; Morales, Miguel A.; Neuscamman, Eric; Parker, William D.; Pineda Flores, Sergio D.; Romero, Nichols A.; Rubenstein, Brenda M.; Shea, Jacqueline A. R.; Shin, Hyeondeok; Shulenburger, Luke; Tillack, Andreas F.; Townsend, Joshua P.; Tubman, Norm M.; Van Der Goetz, Brett; Vincent, Jordan E.; ChangMo Yang, D.; Yang, Yubo; Zhang, Shuai; Zhao, Luning

2018-05-01

QMCPACK is an open source quantum Monte Carlo package for ab initio electronic structure calculations. It supports calculations of metallic and insulating solids, molecules, atoms, and some model Hamiltonians. Implemented real space quantum Monte Carlo algorithms include variational, diffusion, and reptation Monte Carlo. QMCPACK uses Slater–Jastrow type trial wavefunctions in conjunction with a sophisticated optimizer capable of optimizing tens of thousands of parameters. The orbital space auxiliary-field quantum Monte Carlo method is also implemented, enabling cross validation between different highly accurate methods. The code is specifically optimized for calculations with large numbers of electrons on the latest high performance computing architectures, including multicore central processing unit and graphical processing unit systems. We detail the program’s capabilities, outline its structure, and give examples of its use in current research calculations. The package is available at http://qmcpack.org.

Single-electron quantum tomography in quantum Hall edge channels

International Nuclear Information System (INIS)

Grenier, Ch; Degiovanni, P; Herve, R; Bocquillon, E; Parmentier, F D; Placais, B; Berroir, J M; Feve, G

2011-01-01

We propose a quantum tomography protocol to measure single-electron coherence in quantum Hall edge channels, and therefore access for the first time the wavefunction of single-electron excitations propagating in ballistic quantum conductors. Its implementation would open the way to quantitative studies of single-electron decoherence and would provide a quantitative tool for analyzing single- to few-electron sources. We show how this protocol could be implemented using ultrahigh-sensitivity noise measurement schemes.

Quantum coherent optical phase modulation in an ultrafast transmission electron microscope.

Science.gov (United States)

Feist, Armin; Echternkamp, Katharina E; Schauss, Jakob; Yalunin, Sergey V; Schäfer, Sascha; Ropers, Claus

2015-05-14

Coherent manipulation of quantum systems with light is expected to be a cornerstone of future information and communication technology, including quantum computation and cryptography. The transfer of an optical phase onto a quantum wavefunction is a defining aspect of coherent interactions and forms the basis of quantum state preparation, synchronization and metrology. Light-phase-modulated electron states near atoms and molecules are essential for the techniques of attosecond science, including the generation of extreme-ultraviolet pulses and orbital tomography. In contrast, the quantum-coherent phase-modulation of energetic free-electron beams has not been demonstrated, although it promises direct access to ultrafast imaging and spectroscopy with tailored electron pulses on the attosecond scale. Here we demonstrate the coherent quantum state manipulation of free-electron populations in an electron microscope beam. We employ the interaction of ultrashort electron pulses with optical near-fields to induce Rabi oscillations in the populations of electron momentum states, observed as a function of the optical driving field. Excellent agreement with the scaling of an equal-Rabi multilevel quantum ladder is obtained, representing the observation of a light-driven 'quantum walk' coherently reshaping electron density in momentum space. We note that, after the interaction, the optically generated superposition of momentum states evolves into a train of attosecond electron pulses. Our results reveal the potential of quantum control for the precision structuring of electron densities, with possible applications ranging from ultrafast electron spectroscopy and microscopy to accelerator science and free-electron lasers.

Quantum-chemical calculations and electron diffraction study of the equilibrium molecular structure of vitamin K3

Science.gov (United States)

Khaikin, L. S.; Tikhonov, D. S.; Grikina, O. E.; Rykov, A. N.; Stepanov, N. F.

2014-05-01

The equilibrium molecular structure of 2-methyl-1,4-naphthoquinone (vitamin K3) having C s symmetry is experimentally characterized for the first time by means of gas-phase electron diffraction using quantum-chemical calculations and data on the vibrational spectra of related compounds.

2 D electron transport in selectively doped Ga As/Inx Ga1-x As multiple quantum well structures

International Nuclear Information System (INIS)

Kulbachinskii, V.A.; Kytin, V.G.; Babushkina, T.S.; Malkina, I.G.

1996-01-01

Photoluminescence, temperature dependence of conductivity (0.4 x Ga 1-x As multiple quantum well (MQW) structures were investigated. The dependence of electron mobility on the width of the quantum wells and temperature were measured. It was shown that in narrow MQW structures the value of mobility is restricted by interface roughness scattering. In wider MQW structures neither interface roughness scattering nor change impurity scattering can describe the values and temperature dependence of mobility. Negative magnetoresistance was observed. From detailed comparison between theory of weak localization and experiment the relaxation time of the wave function phase τ ψ and temperature dependence of τ ψ were evaluated. Quantum Hall effect was investigated in all samples at T=0.4-4.2 K in magnetic fields up to 40 T. (author). 9 refs., 5 figs., 1 tab

Strong quantum-confined stark effect in germanium quantum-well structures on silicon

International Nuclear Information System (INIS)

Kuo, Y.; Lee, Y. K.; Gei, Y.; Ren, S; Roth, J. E.; Miller, D. A.; Harris, J. S.

2006-01-01

Silicon is the dominant semiconductor for electronics, but there is now a growing need to integrate such component with optoelectronics for telecommunications and computer interconnections. Silicon-based optical modulators have recently been successfully demonstrated but because the light modulation mechanisms in silicon are relatively weak, long (for example, several millimeters) devices or sophisticated high-quality-factor resonators have been necessary. Thin quantum-well structures made from III-V semiconductors such as GaAs, InP and their alloys exhibit the much stronger Quantum-Confined Stark Effect (QCSE) mechanism, which allows modulator structures with only micrometers of optical path length. Such III-V materials are unfortunately difficult to integrate with silicon electronic devices. Germanium is routinely integrated with silicon in electronics, but previous silicon-germanium structures have also not shown strong modulation effects. Here we report the discovery of the QCSE, at room temperature, in thin germanium quantum-well structures grown on silicon. The QCSE here has strengths comparable to that in III-V materials. Its clarity and strength are particularly surprising because germanium is an indirect gap semiconductor, such semiconductors often display much weak optical effects than direct gap materials (such as the III-V materials typically used for optoelectronics). This discovery is very promising for small, high-speed, low-power optical output devices fully compatible with silicon electronics manufacture. (author)

Nonmonotonous electron mobility due to structurally induced resonant coupling of subband states in an asymmetric double quantum well

Directory of Open Access Journals (Sweden)

R. K. Nayak

2015-11-01

Full Text Available We show that sharp nonmonotic variation of low temperature electron mobility μ can be achieved in GaAs/AlxGa1-xAs barrier delta-doped double quantum well structure due to quantum mechanical transfer of subband electron wave functions within the wells. We vary the potential profile of the coupled structure as a function of the doping concentration in order to bring the subbands into resonance such that the subband energy levels anticross and the eigen states of the coupled structure equally share both the wells thereby giving rise to a dip in mobility. When the wells are of equal widths, the dip in mobility occurs under symmetric doping of the side barriers. In case of unequal well widths, the resonance can be obtained by suitable asymmetric variation of the doping concentrations. The dip in mobility becomes sharp and also the wavy nature of mobility takes a rectangular shape by increasing the barrier width. We show that the dip in mobility at resonance is governed by the interface roughness scattering through step like changes in the subband mobilities. It is also gratifying to show that the drop in mobility at the onset of occupation of second subband is substantially supressed through the quantum mechanical transfer of subband wave functions between the wells. Our results can be utilized for performance enhancement of coupled quantum well devices.

Quantum Monte Carlo algorithms for electronic structure at the petascale; the endstation project.

Energy Technology Data Exchange (ETDEWEB)

Kim, J; Ceperley, D M; Purwanto, W; Walter, E J; Krakauer, H; Zhang, S W; Kent, P.R. C; Hennig, R G; Umrigar, C; Bajdich, M; Kolorenc, J; Mitas, L

2008-10-01

Over the past two decades, continuum quantum Monte Carlo (QMC) has proved to be an invaluable tool for predicting of the properties of matter from fundamental principles. By solving the Schrodinger equation through a stochastic projection, it achieves the greatest accuracy and reliability of methods available for physical systems containing more than a few quantum particles. QMC enjoys scaling favorable to quantum chemical methods, with a computational effort which grows with the second or third power of system size. This accuracy and scalability has enabled scientific discovery across a broad spectrum of disciplines. The current methods perform very efficiently at the terascale. The quantum Monte Carlo Endstation project is a collaborative effort among researchers in the field to develop a new generation of algorithms, and their efficient implementations, which will take advantage of the upcoming petaflop architectures. Some aspects of these developments are discussed here. These tools will expand the accuracy, efficiency and range of QMC applicability and enable us to tackle challenges which are currently out of reach. The methods will be applied to several important problems including electronic and structural properties of water, transition metal oxides, nanosystems and ultracold atoms.

Electron Raman scattering in a HgS/CdS spherical quantum dot quantum well

International Nuclear Information System (INIS)

Zhong Qinghu; Lai Liping

2013-01-01

Electron Raman scattering (ERS) is investigated in a spherical HgS/CdS quantum dot quantum well (QDQW). The differential cross section (DCS) is calculated as a function of the scattering frequency and the sizes of QDQW. Single parabolic conduction and valence bands are assumed. The selection rules for the processes are studied. Singularities in the spectra are found and interpreted. The ERS studied here can be used to provide direct information about the electron band structure of these systems. (semiconductor physics)

Quantum teleportation and entanglement swapping of electron spins in superconducting hybrid structures

Energy Technology Data Exchange (ETDEWEB)

Bubanja, Vladimir, E-mail: vladimir.bubanja@callaghaninnovation.govt.nz

2015-06-15

We present schemes for quantum teleportation and entanglement swapping of electronic spin states in hybrid superconductor–normal-metal systems. The proposed schemes employ subgap transport whereby the lowest order processes involve Cooper pair-electron and double Cooper-pair cotunneling in quantum teleportation and entanglement swapping protocols, respectively. The competition between elastic cotunneling and Cooper-pair splitting results in the success probability of 25% in both cases. Described implementations of these protocols are within reach of present-day experimental techniques.

Bend-imitating theory and electron scattering in sharply-bent quantum nanowires

International Nuclear Information System (INIS)

Vakhnenko, O.O.

2011-01-01

The concept of bend-imitating description as applied to the one-electron quantum mechanics in sharply-bent ideal electron waveguides and its development into a self consistent theory are presented. In the framework of bend-imitating approach, the investigation of the electron scattering in a doubly-bent 2D quantum wire with S-like bend has been made, and the explicit dependences of the transmission and reflection coefficients on geometrical parameters of a structure, as well as on the electron energy, have been obtained. The total elimination of the mixing between the scattering channels of a S-like bent quantum wire is predicted.

Helical quantum states in HgTe quantum dots with inverted band structures.

Science.gov (United States)

Chang, Kai; Lou, Wen-Kai

2011-05-20

We investigate theoretically the electron states in HgTe quantum dots (QDs) with inverted band structures. In sharp contrast to conventional semiconductor quantum dots, the quantum states in the gap of the HgTe QD are fully spin-polarized and show ringlike density distributions near the boundary of the QD and spin-angular momentum locking. The persistent charge currents and magnetic moments, i.e., the Aharonov-Bohm effect, can be observed in such a QD structure. This feature offers us a practical way to detect these exotic ringlike edge states by using the SQUID technique.

Quantum dots: Rethinking the electronics

Energy Technology Data Exchange (ETDEWEB)

Bishnoi, Dimple [Department of Physics, S. S. Jain Subodh PG College, Jaipur, Rajasthan Pin-302004 (India)

2016-05-06

In this paper, we demonstrate theoretically that the Quantum dots are quite interesting for the electronics industry. Semiconductor quantum dots (QDs) are nanometer-scale crystals, which have unique photo physical, quantum electrical properties, size-dependent optical properties, There small size means that electrons do not have to travel as far as with larger particles, thus electronic devices can operate faster. Cheaper than modern commercial solar cells while making use of a wider variety of photon energies, including “waste heat” from the sun’s energy. Quantum dots can be used in tandem cells, which are multi junction photovoltaic cells or in the intermediate band setup. PbSe (lead selenide) is commonly used in quantum dot solar cells.

The Electronic Structure of Coupled Semiconductor Quantum Dots Arranged as a Graphene Hexagonal Lattice under a Magnetic Field

International Nuclear Information System (INIS)

Peng Juan; Li Shu-Shen

2012-01-01

We study the electronic spectrum of coupled quantum dots (QDs) arranged as a graphene hexagonal lattice in the presence of an external perpendicular magnetic field. In our tight-binding model, the effect of the magnetic field is included in both the Peierls phase of the Hamiltonian and the tight-binding basis Wannier function. The energy of the system is analyzed when the magnetic flux through the lattice unit cell is a rational fraction of the quantum flux. The calculated spectrum has recursive properties, similar to those of the classical Hofstadter butterfly. However, unlike the ideal Hofstadter butterfly structure, our result is asymmetric since the impacts of the specific material and the magnetic field on the wavefunctions are included, making the results more realistic. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

INFLUENCE OF LOW-ENERGY AR-SPUTTERING ON THE ELECTRONIC-PROPERTIES OF INAS-BASED QUANTUM-WELL STRUCTURES

NARCIS (Netherlands)

Magnee, P.H.C.; den Hartog, S.G.; Wees, B.J.van; Klapwijk, T.M; van de Graaf, W.; Borghs, G.

1995-01-01

The influence of low energy (80-500 eV) Ar-ion milling cleaning techniques on InAs based quantum well structures is investigated. It is found that both etching with a Kaufmann source and sputter-etching with a rf-plasma enhances the electron density and reduces the mobility. An anneal at 180 degrees

The molecular structure of 4-methylpyridine-N-oxide: Gas-phase electron diffraction and quantum chemical calculations

Science.gov (United States)

Belova, Natalya V.; Girichev, Georgiy V.; Kotova, Vitaliya E.; Korolkova, Kseniya A.; Trang, Nguyen Hoang

2018-03-01

The molecular structure of 4-methylpiridine-N-oxide, 4-MePyO, has been studied by gas-phase electron diffraction monitored by mass spectrometry (GED/MS) and quantum chemical (DFT) calculations. Both, quantum chemistry and GED analyses resulted in CS molecular symmetry with the planar pyridine ring. Obtained molecular parameters confirm the hyperconjugation in the pyridine ring and the sp2 hybridization concept of the nitrogen and carbon atoms in the ring. The experimental geometric parameters are in a good agreement with the parameters for non-substituted N-oxide and reproduced very closely by DFT calculations. The presence of the electron-donating CH3 substituent in 4-MePyO leads to a decrease of the ipso-angle and to an increase of r(N→O) in comparison with the non-substituted PyO. Electron density distribution analysis has been performed in terms of natural bond orbitals (NBO) scheme. The nature of the semipolar N→O bond is discussed.

Electronic Conduction through Atomic Chains, Quantum Well and Quantum Wire

International Nuclear Information System (INIS)

Sharma, A. C.

2011-01-01

Charge transport is dynamically and strongly linked with atomic structure, in nanostructures. We report our ab-initio calculations on electronic transport through atomic chains and the model calculations on electron-electron and electron-phonon scattering rates in presence of random impurity potential in a quantum well and in a quantum wire. We computed synthesis and ballistic transport through; (a) C and Si based atomic chains attached to metallic electrodes, (b) armchair (AC), zigzag (ZZ), mixed, rotated-AC and rotated-ZZ geometries of small molecules made of 2S, 6C and 4H atoms attaching to metallic electrodes, and (c) carbon atomic chain attached to graphene electrodes. Computed results show that synthesis of various atomic chains are practically possible and their transmission coefficients are nonzero for a wide energy range. The ab-initio calculations on electronic transport have been performed with the use of Landauer-type scattering formalism formulated in terms of Grben's functions in combination with ground-state DFT. The electron-electron and electron-phonon scattering rates have been calculated as function of excitation energy both at zero and finite temperatures for disordered 2D and 1D systems. Our model calculations suggest that electron scattering rates in a disordered system are mainly governed by effective dimensionality of a system, carrier concentration and dynamical screening effects.

Two-dimensional electron gas in monolayer InN quantum wells

International Nuclear Information System (INIS)

Pan, W.; Wang, G. T.; Dimakis, E.; Moustakas, T. D.; Tsui, D. C.

2014-01-01

We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in a superlattice structure of 40 InN quantum wells consisting of one monolayer of InN embedded between 10 nm GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5 × 10 15  cm −2 (or 1.25 × 10 14  cm −2 per InN quantum well, assuming all the quantum wells are connected by diffused indium contacts) and 420 cm 2 /Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES

Quantum Electronics for Atomic Physics

CERN Document Server

Nagourney, Warren

2010-01-01

Quantum Electronics for Atomic Physics provides a course in quantum electronics for researchers in atomic physics. The book covers the usual topics, such as Gaussian beams, cavities, lasers, nonlinear optics and modulation techniques, but also includes a number of areas not usually found in a textbook on quantum electronics. It includes such practical matters as the enhancement of nonlinear processes in a build-up cavity, impedance matching into a cavity, laser frequencystabilization (including servomechanism theory), astigmatism in ring cavities, and atomic/molecular spectroscopic techniques

Electronic structure, morphology and emission polarization of enhanced symmetry InAs quantum-dot-like structures grown on InP substrates by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Maryński, A.; Sĕk, G.; Musiał, A.; Andrzejewski, J.; Misiewicz, J. [Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław (Poland); Gilfert, C.; Reithmaier, J. P. [Technische Physik, Institute of Nanostructure Technology and Analytics, CINSaT, University of Kassel, Heinrich Plett-Str. 40, D-34132 Kassel (Germany); Capua, A.; Karni, O.; Gready, D.; Eisenstein, G. [Department of Electrical Engineering, Technion, Haifa 32000 (Israel); Atiya, G.; Kaplan, W. D. [Department of Materials Science and Engineering, Technion, Haifa 32000 (Israel); Kölling, S. [Fraunhofer Institute for Photonic Microsystems, Center for Nanoelectronic Technologies, Königsbrücker Straße 180, D-01099 Dresden (Germany)

2013-09-07

The optical and structural properties of a new kind of InAs/InGaAlAs/InP quantum dot (QD)-like objects grown by molecular beam epitaxy have been investigated. These nanostructures were found to have significantly more symmetrical shapes compared to the commonly obtained dash-like geometries typical of this material system. The enhanced symmetry has been achieved due to the use of an As{sub 2} source and the consequent shorter migration length of the indium atoms. Structural studies based on a combination of scanning transmission electron microscopy (STEM) and atom probe tomography (APT) provided detailed information on both the structure and composition distribution within an individual nanostructure. However, it was not possible to determine the lateral aspect ratio from STEM or APT. To verify the in-plane geometry, electronic structure calculations, including the energy levels and transition oscillator strength for the QDs have been performed using an eight-band k·p model and realistic system parameters. The results of calculations were compared to measured polarization-resolved photoluminescence data. On the basis of measured degree of linear polarization of the surface emission, the in-plane shape of the QDs has been assessed proving a substantial increase in lateral symmetry. This results in quantum-dot rather than quantum-dash like properties, consistent with expectations based on the growth conditions and the structural data.

The electronic properties of semiconductor quantum dots

International Nuclear Information System (INIS)

Barker, J.A.

2000-10-01

This work is an investigation into the electronic behaviour of semiconductor quantum dots, particularly self-assembled quantum dot arrays. Processor-efficient models are developed to describe the electronic structure of dots, deriving analytic formulae for the strain tensor, piezoelectric distribution and diffusion- induced evolution of the confinement potential, for dots of arbitrary initial shape and composition profile. These models are then applied to experimental data. Transitions due to individual quantum dots have a narrow linewidth as a result of their discrete density of states. By contrast, quantum dot arrays exhibit inhomogeneous broadening which is generally attributed to size variations between the individual dots in the ensemble. Interpreting the results of double resonance spectroscopy, it is seen that variation in the indium composition of the nominally InAs dots is also present. This result also explains the otherwise confusing relationship between the spread in the ground-state and excited-state transition energies. Careful analysis shows that, in addition to the variations in size and composition, some other as yet unidentified broadening mechanism must also be present. The influence of rapid thermal annealing on dot electronic structure is also considered, finding that the experimentally observed blue-shift and narrowing of the photoluminescence linewidth may both be explained in terms of normal In/Ga interdiffusion. InAs/GaAs self-assembled quantum dots are commonly assumed to have a pyramidal geometry, so that we would expect the energy separation of the ground-state electron and hole levels in the dot to be largest at a positive applied field. This should also be the case for any dot of uniform composition whose shape tapers inwards from base to top, counter to the results of experimental Stark-shift spectroscopy which show a peak transition energy at a negative applied field. It is demonstrated that this inversion of the ground state

Resonant electronic transport through a triple quantum-dot with Λ-type level structure under dual radiation fields

International Nuclear Information System (INIS)

Guan, Chun; Xing, Yunhui; Zhang, Chao; Ma, Zhongshui

2014-01-01

Due to quantum interference, light can transmit through dense atomic media, a phenomenon known as electromagnetically induced transparency (EIT). We propose that EIT is not limited to light transmission and there is an electronic analog where resonant transparency in charge transport in an opaque structure can be induced by electromagnetic radiation. A triple-quantum-dots system with Λ-type level structure is generally opaque due to the level in the center dot being significantly higher and therefore hopping from the left dot to the center dot is almost forbidden. We demonstrate that an electromagnetically induced electron transparency (EIET) in charge of transport can indeed occur in the Λ-type system. The direct evidence of EIET is that an electron can travel from the left dot to the right dot, while the center dot apparently becomes invisible. We analyze EIET and the related shot noise in both the zero and strong Coulomb blockade regimes. It is found that the EIET (position, height, and symmetry) can be tuned by several controllable parameters of the radiation fields, such as the Rabi frequencies and detuning frequencies. The result offers a transparency/opaque tuning technique in charge transport using interfering radiation fields

Quantum electronics maser amplifiers and oscillators

CERN Document Server

Fain, V M; Sanders, J H

2013-01-01

Quantum Electronics, Volume 2: Maser Amplifiers and Oscillators deals with the experimental and theoretical aspects of maser amplifiers and oscillators which are based on the principles of quantum electronics. It shows how the concepts and equations used in quantum electronics follow from the basic principles of theoretical physics.Comprised of three chapters, this volume begins with a discussion on the elements of the theory of quantum oscillators and amplifiers working in the microwave region, along with the practical achievements in this field. Attention is paid to two-level paramagnetic ma

Electronic fine structure and recombination dynamics in single InAs quantum dots

Energy Technology Data Exchange (ETDEWEB)

Seguin, R.

2008-01-28

In the work at hand single InAs/GaAs quantum dots (QDs) are examined via cathodoluminescence spectroscopy. A thorough analysis of the spectra leads to an unambiguous assignment of the lines to the decay of specific excitonic complexes. A special aspect of the Coulomb interaction, the exchange interaction, gives rise to a fine structure in the initial and final states of an excitonic decay. This leads to a fine structure in the emission spectra that again is unique for every excitonic complex. The exchange interaction is discussed in great detail in this work.QDs of different sizes are investigated and the influence on the electronic properties is monitored. Additionally, the structure is modified ex situ by a thermal annealing process. The changes of the spectra under different annealing temperatures are traced. Finally, recombination dynamics of different excitonic complexes are examined by performing time-resolved cathodoluminescence spectroscopy. (orig.)

Electronic fine structure and recombination dynamics in single InAs quantum dots

International Nuclear Information System (INIS)

Seguin, R.

2008-01-01

In the work at hand single InAs/GaAs quantum dots (QDs) are examined via cathodoluminescence spectroscopy. A thorough analysis of the spectra leads to an unambiguous assignment of the lines to the decay of specific excitonic complexes. A special aspect of the Coulomb interaction, the exchange interaction, gives rise to a fine structure in the initial and final states of an excitonic decay. This leads to a fine structure in the emission spectra that again is unique for every excitonic complex. The exchange interaction is discussed in great detail in this work.QDs of different sizes are investigated and the influence on the electronic properties is monitored. Additionally, the structure is modified ex situ by a thermal annealing process. The changes of the spectra under different annealing temperatures are traced. Finally, recombination dynamics of different excitonic complexes are examined by performing time-resolved cathodoluminescence spectroscopy. (orig.)

Electronic structure and quantum transport properties of metallic and semiconducting nanowires

Science.gov (United States)

Simbeck, Adam J.

The future of the semiconductor industry hinges upon new developments to combat the scaling issues that currently afflict two main chip components: transistors and interconnects. For transistors this means investigating suitable materials to replace silicon for both the insulating gate and the semiconducting channel in order to maintain device performance with decreasing size. For interconnects this equates to overcoming the challenges associated with copper when the wire dimensions approach the confinement limit, as well as continuing to develop low-k dielectric materials that can assure minimal cross-talk between lines. In addition, such challenges make it increasingly clear that device design must move from a top-down to a bottom-up approach in which the desired electronic characteristics are tailored from first-principles. It is with such fundamental hurdles in mind that ab initio calculations on the electronic and quantum transport properties of nanoscale metallic and semiconducting wires have been performed. More specifically, this study seeks to elaborate on the role played by confinement, contacts, dielectric environment, edge decoration, and defects in altering the electronic and transport characteristics of such systems. As experiments continue to achieve better control over the synthesis and design of nanowires, these results are expected to become increasingly more important for not only the interpretation of electronic and transport trends, but also in engineering the electronic structure of nanowires for the needs of the devices of the future. For the metallic atomic wires, the quantum transport properties are first investigated by considering finite, single-atom chains of aluminum, copper, gold, and silver sandwiched between gold contacts. Non-equilibrium Green's function based transport calculations reveal that even in the presence of the contact the conductivity of atomic-scale aluminum is greater than that of the other metals considered. This is

Ab initio structure determination of nanocrystals of organic pharmaceutical compounds by electron diffraction at room temperature using a Timepix quantum area direct electron detector

Energy Technology Data Exchange (ETDEWEB)

Genderen, E. van; Clabbers, M. T. B. [Biophysical Structural Chemistry, Leiden University, Einsteinweg 55, 2333 CC Leiden (Netherlands); Center for Cellular Imaging and NanoAnalytics (C-CINA), Biozentrum, University of Basel, CH-4058 Basel (Switzerland); Das, P. P. [Nanomegas SPRL, Boulevard Edmond Machtens 79, B 1080, Brussels (Belgium); Stewart, A. [Department of Physics and Energy, Materials and Surface Science Institute (MSSI), University of Limerick, Limerick (Ireland); Nederlof, I. [Biophysical Structural Chemistry, Leiden University, Einsteinweg 55, 2333 CC Leiden (Netherlands); Amsterdam Scientific Instruments, Postbus 41882, 1009 DB Amsterdam (Netherlands); Barentsen, K. C. [Biophysical Structural Chemistry, Leiden University, Einsteinweg 55, 2333 CC Leiden (Netherlands); Portillo, Q. [Nanomegas SPRL, Boulevard Edmond Machtens 79, B 1080, Brussels (Belgium); Centres Científics i Tecnològics de la Universitat de Barcelona, University of Barcelona, Carrer de Lluís Solé i Sabaris, 1-3, Barcelona (Spain); Pannu, N. S. [Biophysical Structural Chemistry, Leiden University, Einsteinweg 55, 2333 CC Leiden (Netherlands); Nicolopoulos, S. [Nanomegas SPRL, Boulevard Edmond Machtens 79, B 1080, Brussels (Belgium); Gruene, T., E-mail: tim.gruene@psi.ch [Biology and Chemistry, Laboratory of Biomolecular Research, Paul Scherrer Institute (PSI), 5232 Villigen (Switzerland); Abrahams, J. P., E-mail: tim.gruene@psi.ch [Biophysical Structural Chemistry, Leiden University, Einsteinweg 55, 2333 CC Leiden (Netherlands); Center for Cellular Imaging and NanoAnalytics (C-CINA), Biozentrum, University of Basel, CH-4058 Basel (Switzerland); Biology and Chemistry, Laboratory of Biomolecular Research, Paul Scherrer Institute (PSI), 5232 Villigen (Switzerland)

2016-02-05

A specialized quantum area detector for electron diffraction studies makes it possible to solve the structure of small organic compound nanocrystals in non-cryo conditions by direct methods. Until recently, structure determination by transmission electron microscopy of beam-sensitive three-dimensional nanocrystals required electron diffraction tomography data collection at liquid-nitrogen temperature, in order to reduce radiation damage. Here it is shown that the novel Timepix detector combines a high dynamic range with a very high signal-to-noise ratio and single-electron sensitivity, enabling ab initio phasing of beam-sensitive organic compounds. Low-dose electron diffraction data (∼0.013 e{sup −} Å{sup −2} s{sup −1}) were collected at room temperature with the rotation method. It was ascertained that the data were of sufficient quality for structure solution using direct methods using software developed for X-ray crystallography (XDS, SHELX) and for electron crystallography (ADT3D/PETS, SIR2014)

Observation of suppressed Auger mechanism in type-I quantum well structures with delocalized electron-hole wavefunctions

Energy Technology Data Exchange (ETDEWEB)

Hassani Nia, Iman; Fathipour, Vala; Mohseni, Hooman, E-mail: hmohseni@ece.northwestern.edu [Bio-Inspired Sensors and Optoelectronics Laboratory (BISOL), Department of Electrical Engineering, Northwestern University, Evanston, Illinois 60208 (United States)

2015-08-15

We report the first observation of non-threshold Auger mechanism for a quantum well structure with Type-I band alignment. Excitation-dependent photoluminescence measurements were used to extract the Auger recombination coefficients from 77 K up to room temperature. The results verify the role of interface mediated momentum exchange as well as suppression of Auger recombination for delocalized electron-hole wavefunctions.

Substantially Enhancing Quantum Coherence of Electrons in Graphene via Electron-Plasmon Coupling.

Science.gov (United States)

Cheng, Guanghui; Qin, Wei; Lin, Meng-Hsien; Wei, Laiming; Fan, Xiaodong; Zhang, Huayang; Gwo, Shangjr; Zeng, Changgan; Hou, J G; Zhang, Zhenyu

2017-10-13

The interplays between different quasiparticles in solids lay the foundation for a wide spectrum of intriguing quantum effects, yet how the collective plasmon excitations affect the quantum transport of electrons remains largely unexplored. Here we provide the first demonstration that when the electron-plasmon coupling is introduced, the quantum coherence of electrons in graphene is substantially enhanced with the quantum coherence length almost tripled. We further develop a microscopic model to interpret the striking observations, emphasizing the vital role of the graphene plasmons in suppressing electron-electron dephasing. The novel and transformative concept of plasmon-enhanced quantum coherence sheds new insight into interquasiparticle interactions, and further extends a new dimension to exploit nontrivial quantum phenomena and devices in solid systems.

A quantum field theory of the extended electron

International Nuclear Information System (INIS)

Salesi, Giovanni; Recami, Erasmo; Universidade Estadual de Campinas, SP

1993-12-01

In a recent paper, the classical model of Barut and Zanghi (BZ) for the electron spin which interpreted the Zitterbewegung (zbw) motion along helical paths and its quantum version have been investigated by using the language of Clifford algebras. In also doing, a new non-linear Dirac-like equation (NDE) was derived. We want to readdress the whole subject, and complete it, by adopting - for the sake of physical clarity - the ordinary tensorial language. In particular, we re-derive here the NDE for the electron quantum field, show it to be associated with a new conserved probability current, and stress its importance for a quantum field theory of spin 1/2 fermions. Actually, we propose this equation in substitution for the Dirac equation, which comes from the former by averaging over a zbw cycle. We then derive a new equation of motion for the quantum field velocity, which will allow us to regard the electron as an extended object, with a classically intelligible internal structure (thus overcoming some known, long-standing problems). We carefully the solutions of the NDE; with special attention to those implying (at the classical limit) light-like helical motions, since these appear to be the most adequate equations for the electron description, from the kinematical and physical points of view, and do cope with the electron electromagnetic properties (such as Coulomb field and intrinsic magnetic moment). (author). 18 refs

A quantum field theory of the extended electron

Energy Technology Data Exchange (ETDEWEB)

Salesi, Giovanni [Universita Statale di Catania (Italy). Dipt. di Fisica; Recami, Erasmo [Universita Statale di Bergamo, Dalmine, BG (Italy). Facolta di Ingegneria; [Universidade Estadual de Campinas, SP (Brazil). Dept. de Matematica Aplicada

1993-12-01

In a recent paper, the classical model of Barut and Zanghi (BZ) for the electron spin which interpreted the Zitterbewegung (zbw) motion along helical paths and its quantum version have been investigated by using the language of Clifford algebras. In also doing, a new non-linear Dirac-like equation (NDE) was derived. We want to readdress the whole subject, and complete it, by adopting - for the sake of physical clarity - the ordinary tensorial language. In particular, we re-derive here the NDE for the electron quantum field, show it to be associated with a new conserved probability current, and stress its importance for a quantum field theory of spin 1/2 fermions. Actually, we propose this equation in substitution for the Dirac equation, which comes from the former by averaging over a zbw cycle. We then derive a new equation of motion for the quantum field velocity, which will allow us to regard the electron as an extended object, with a classically intelligible internal structure (thus overcoming some known, long-standing problems). We carefully the solutions of the NDE; with special attention to those implying (at the classical limit) light-like helical motions, since these appear to be the most adequate equations for the electron description, from the kinematical and physical points of view, and do cope with the electron electromagnetic properties (such as Coulomb field and intrinsic magnetic moment). (author). 18 refs.

Numerical simulation of electronic properties of coupled quantum dots on wetting layers

International Nuclear Information System (INIS)

Betcke, M M; Voss, H

2008-01-01

Self-assembled quantum dots are grown on wetting layers and frequently in an array-like assembly of many similar but not exactly equal dots. Nevertheless, most simulations disregard these structural conditions and restrict themselves to simulating a pure single quantum dot. For reasons of numerical efficiency we advocate the effective one-band Hamiltonian with energy- and position-dependent effective mass approximation and a finite height hard-wall 3D confinement potential for computation of the energy levels of the electrons in the conduction band. Within this model we investigate the geometrical effects mentioned above on the electronic structure of a pyramidal InAs quantum dot embedded in a GaAs matrix. We find that the presence of a wetting layer may affect the electronic structure noticeably. Furthermore, we establish that, in spite of the large bandgap of the InAs/GaAs heterostructure, if the dots in a vertically aligned array are sufficiently close stacked there is considerable interaction between their eigenfunctions. Moreover, the eigenfunctions of such an array are quite sensitive to certain structural perturbations

Si quantum dot structures and their applications

Science.gov (United States)

Shcherbyna, L.; Torchynska, T.

2013-06-01

This paper presents briefly the history of emission study in Si quantum dots (QDs) in the last two decades. Stable light emission of Si QDs and NCs was observed in the spectral ranges: blue, green, orange, red and infrared. These PL bands were attributed to the exciton recombination in Si QDs, to the carrier recombination through defects inside of Si NCs or via oxide related defects at the Si/SiOx interface. The analysis of recombination transitions and the different ways of the emission stimulation in Si QD structures, related to the element variation for the passivation of surface dangling bonds, as well as the plasmon induced emission and rare earth impurity activation, have been presented. The different applications of Si QD structures in quantum electronics, such as: Si QD light emitting diodes, Si QD single union and tandem solar cells, Si QD memory structures, Si QD based one electron devices and double QD structures for spintronics, have been discussed as well. Note the significant worldwide interest directed toward the silicon-based light emission for integrated optoelectronics is related to the complementary metal-oxide semiconductor compatibility and the possibility to be monolithically integrated with very large scale integrated (VLSI) circuits. The different features of poly-, micro- and nanocrystalline silicon for solar cells, that is a mixture of both amorphous and crystalline phases, such as the silicon NCs or QDs embedded in a α-Si:H matrix, as well as the thin film 2-cell or 3-cell tandem solar cells based on Si QD structures have been discussed as well. Silicon NC based structures for non-volatile memory purposes, the recent studies of Si QD base single electron devices and the single electron occupation of QDs as an important component to the measurement and manipulation of spins in quantum information processing have been analyzed as well.

Electron Raman scattering in quantum well wires

International Nuclear Information System (INIS)

Zhao Xiangfu; Liu Cuihong

2007-01-01

Electron Raman scattering (ERS) is investigated in a semiconductor quantum well wire (QWW) of cylindrical geometry for T=0K and neglecting phonon-assisted transitions. The differential cross-section (DCS) involved in this process is calculated as a function of a scattering frequency and the cylindrical radius. Electron states are confined within a QWW. Single parabolic conduction and valence bands are assumed. The selection rules are studied. Singularities in the spectra are interpreted for various cylindrical radii. ERS discussed here can provide direct information about the electron band structure of the system

Quantum aspects of the free electron laser

Energy Technology Data Exchange (ETDEWEB)

Gaiba, R.

2007-03-15

We study the role of Quantum Mechanics in the physics of Free Electron Lasers. While the Free Electron Laser (FEL) is usually treated as a classical device, we review the advantages of a quantum formulation of the FEL. We then show the existence of a regime of operation of the FEL that can only be described using Quantum Mechanics: if the dimensionless quantum parameter anti {rho} is smaller than 1, then in the 1-dimensional approximation the Hamiltonian that describes the FEL becomes equivalent to the Hamiltonian of a two-level system coupled to a radiation field. We give analytical and numerical solutions for the photon statistics of a Free Electron Laser operating in the quantum regime under various approximations. Since in the quantum regime the momentum of the electrons is discrete, we give a description of the electrons in phase space by introducing the Discrete Wigner Function. We then drop the assumption of a mono-energetic electron beam and describe the general case of a initial electron energy spread G({gamma}). Numerical analysis shows that the FEL quantum regime is observed only when the width of the initial momentum distribution is smaller than the momentum of the emitted photons. Both the analytical results in the linear approximation and the numerical simulations show that only the electrons close to a certain resonant energy start to emit photons. This generates the so-called Hole-burning effect in the electrons energy distribution, as it can be seen in the simulations we provide. Finally, we present a brief discussion about a fundamental uncertainty relation that ties the electron energy spread and the electron bunching. (orig.)

Electron confinement in thin metal films. Structure, morphology and interactions

Energy Technology Data Exchange (ETDEWEB)

Dil, J.H.

2006-05-15

This thesis investigates the interplay between reduced dimensionality, electronic structure, and interface effects in ultrathin metal layers (Pb, In, Al) on a variety of substrates (Si, Cu, graphite). These layers can be grown with such a perfection that electron confinement in the direction normal to the film leads to the occurrence of quantum well states in their valence bands. These quantum well states are studied in detail, and their behaviour with film thickness, on different substrates, and other parameters of growth are used here to characterise a variety of physical properties of such nanoscale systems. The sections of the thesis deal with a determination of quantum well state energies for a large data set on different systems, the interplay between film morphology and electronic structure, and the influence of substrate electronic structure on their band shape; finally, new ground is broken by demonstrating electron localization and correlation effects, and the possibility to measure the influence of electron-phonon coupling in bulk bands. (orig.)

Quantum Monte Carlo for electronic structure: Recent developments and applications

Energy Technology Data Exchange (ETDEWEB)

Rodriquez, Maria Milagos Soto [Lawrence Berkeley Lab. and Univ. of California, Berkeley, CA (United States). Dept. of Chemistry

1995-04-01

Quantum Monte Carlo (QMC) methods have been found to give excellent results when applied to chemical systems. The main goal of the present work is to use QMC to perform electronic structure calculations. In QMC, a Monte Carlo simulation is used to solve the Schroedinger equation, taking advantage of its analogy to a classical diffusion process with branching. In the present work the author focuses on how to extend the usefulness of QMC to more meaningful molecular systems. This study is aimed at questions concerning polyatomic and large atomic number systems. The accuracy of the solution obtained is determined by the accuracy of the trial wave function`s nodal structure. Efforts in the group have given great emphasis to finding optimized wave functions for the QMC calculations. Little work had been done by systematically looking at a family of systems to see how the best wave functions evolve with system size. In this work the author presents a study of trial wave functions for C, CH, C₂H and C₂H₂. The goal is to study how to build wave functions for larger systems by accumulating knowledge from the wave functions of its fragments as well as gaining some knowledge on the usefulness of multi-reference wave functions. In a MC calculation of a heavy atom, for reasonable time steps most moves for core electrons are rejected. For this reason true equilibration is rarely achieved. A method proposed by Batrouni and Reynolds modifies the way the simulation is performed without altering the final steady-state solution. It introduces an acceleration matrix chosen so that all coordinates (i.e., of core and valence electrons) propagate at comparable speeds. A study of the results obtained using their proposed matrix suggests that it may not be the optimum choice. In this work the author has found that the desired mixing of coordinates between core and valence electrons is not achieved when using this matrix. A bibliography of 175 references is

Quantum Monte Carlo for electronic structure: Recent developments and applications

International Nuclear Information System (INIS)

Rodriguez, M.M.S.; Lawrence Berkeley Lab., CA

1995-04-01

Quantum Monte Carlo (QMC) methods have been found to give excellent results when applied to chemical systems. The main goal of the present work is to use QMC to perform electronic structure calculations. In QMC, a Monte Carlo simulation is used to solve the Schroedinger equation, taking advantage of its analogy to a classical diffusion process with branching. In the present work the author focuses on how to extend the usefulness of QMC to more meaningful molecular systems. This study is aimed at questions concerning polyatomic and large atomic number systems. The accuracy of the solution obtained is determined by the accuracy of the trial wave function's nodal structure. Efforts in the group have given great emphasis to finding optimized wave functions for the QMC calculations. Little work had been done by systematically looking at a family of systems to see how the best wave functions evolve with system size. In this work the author presents a study of trial wave functions for C, CH, C 2 H and C 2 H 2 . The goal is to study how to build wave functions for larger systems by accumulating knowledge from the wave functions of its fragments as well as gaining some knowledge on the usefulness of multi-reference wave functions. In a MC calculation of a heavy atom, for reasonable time steps most moves for core electrons are rejected. For this reason true equilibration is rarely achieved. A method proposed by Batrouni and Reynolds modifies the way the simulation is performed without altering the final steady-state solution. It introduces an acceleration matrix chosen so that all coordinates (i.e., of core and valence electrons) propagate at comparable speeds. A study of the results obtained using their proposed matrix suggests that it may not be the optimum choice. In this work the author has found that the desired mixing of coordinates between core and valence electrons is not achieved when using this matrix. A bibliography of 175 references is included

Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy

KAUST Repository

Browne, David A.; Mazumder, Baishakhi; Wu, Yuh-Renn; Speck, James S.

2015-01-01

on electron transport through quantum well active regions. These unipolar structures served as a test vehicle to test our 2D model of the effect of compositional fluctuations on polarization-induced barriers. Variables that were systematically studied included

Quantum logic gates based on coherent electron transport in quantum wires.

Science.gov (United States)

Bertoni, A; Bordone, P; Brunetti, R; Jacoboni, C; Reggiani, S

2000-06-19

It is shown that the universal set of quantum logic gates can be realized using solid-state quantum bits based on coherent electron transport in quantum wires. The elementary quantum bits are realized with a proper design of two quantum wires coupled through a potential barrier. Numerical simulations show that (a) a proper design of the coupling barrier allows one to realize any one-qbit rotation and (b) Coulomb interaction between two qbits of this kind allows the implementation of the CNOT gate. These systems are based on a mature technology and seem to be integrable with conventional electronics.

Coupled quantum-classical method for long range charge transfer: relevance of the nuclear motion to the quantum electron dynamics

International Nuclear Information System (INIS)

Da Silva, Robson; Hoff, Diego A; Rego, Luis G C

2015-01-01

Charge and excitonic-energy transfer phenomena are fundamental for energy conversion in solar cells as well as artificial photosynthesis. Currently, much interest is being paid to light-harvesting and energy transduction processes in supramolecular structures, where nuclear dynamics has a major influence on electronic quantum dynamics. For this reason, the simulation of long range electron transfer in supramolecular structures, under environmental conditions described within an atomistic framework, has been a difficult problem to study. This work describes a coupled quantum mechanics/molecular mechanics method that aims at describing long range charge transfer processes in supramolecular systems, taking into account the atomistic details of large molecular structures, the underlying nuclear motion, and environmental effects. The method is applied to investigate the relevance of electron–nuclei interaction on the mechanisms for photo-induced electron–hole pair separation in dye-sensitized interfaces as well as electronic dynamics in molecular structures. (paper)

Electronic structure and correlated wave functions of a few electron quantum dots

Energy Technology Data Exchange (ETDEWEB)

Sako, Tokuei [Laboratory of Physics, College of Science and Technology, Nihon University, 7-24-1 Narashinodai, Funabashi, Chiba 274-8501 (Japan); Ishida, Hiroshi [College of Humanities and Sciences, Nihon University, Tokyo 156-8550 (Japan); Fujikawa, Kazuo [Institute of Quantum Science, College of Science and Technology, Nihon University, Chiyoda-ku, Tokyo 101-8308 (Japan)

2015-01-22

The energy spectra and wave functions of a few electrons confined by a quasi-one-dimensional harmonic and anharmonic potentials have been studied by using a full configuration interaction method employing a Cartesian anisotropic Gaussian basis set. The energy spectra are classified into three regimes of the strength of confinement, namely, large, medium and small. The polyad quantum number defined by a total number of nodes in the wave functions is shown to be a key ingredient to interpret the energy spectra for the whole range of the confinement strength. The nodal pattern of the wave functions exhibits normal modes for the harmonic confining potential, indicating collective motions of electrons. These normal modes are shown to undergo a transition to local modes for an anharmonic potential with large anharmonicity.

Advances in quantum electronics

CERN Document Server

Goodwin, D W

1974-01-01

Advances in Quantum Electronics, Volume 2 deals with the effects of quantum mechanics on the behavior of electrons in matter. This book is divided into three chapters. Chapter 1 reviews the statistical properties of optical fields and spectral processing techniques, including the use of photon correlation techniques to measure scattering effects in a number of different media. The use of optical E.P.R. and excitation spectroscopic techniques and techniques for establishing the location of impurity ions in the chalcogenides are describe in Chapter 2. The last chapter surveys the field of mode l

Quantum computation in semiconductor quantum dots of electron-spin asymmetric anisotropic exchange

International Nuclear Information System (INIS)

Hao Xiang; Zhu Shiqun

2007-01-01

The universal quantum computation is obtained when there exists asymmetric anisotropic exchange between electron spins in coupled semiconductor quantum dots. The asymmetric Heisenberg model can be transformed into the isotropic model through the control of two local unitary rotations for the realization of essential quantum gates. The rotations on each qubit are symmetrical and depend on the strength and orientation of asymmetric exchange. The implementation of the axially symmetric local magnetic fields can assist the construction of quantum logic gates in anisotropic coupled quantum dots. This proposal can efficiently use each physical electron spin as a logical qubit in the universal quantum computation

Confined quantum systems: spectral properties of two-electron quantum dots

International Nuclear Information System (INIS)

Sako, T; Diercksen, G H F

2003-01-01

The spectrum, electron-density distribution and ground-state correlation energy of two electrons confined by an anisotropic harmonic oscillator potential have been studied for different confinement strengths ω by using the quantum chemical configuration interaction (CI) method employing a large Cartesian anisotropic Gaussian basis set and a full CI wavefunction. Energy level diagrams and electron-density distributions are displayed for selected electronic states and confinement parameters. The total energy and spacing between energy levels increase in all cases with increasing ω. The energy level structure cannot be matched by scaling with respect to ω. The correlation energy of the ground state is comparable in magnitude to that of the helium atom. It increases for increasing ω. The percentage of the correlation energy with respect to the total energy of the ground state is considerably larger than that of the helium atom

Controllable continuous evolution of electronic states in a single quantum ring

Science.gov (United States)

Chakraborty, Tapash; Manaselyan, Aram; Barseghyan, Manuk; Laroze, David

2018-02-01

An intense terahertz laser field is shown to have a profound effect on the electronic and optical properties of quantum rings where the isotropic and anisotropic quantum rings can now be treated on equal footing. We have demonstrated that in isotropic quantum rings the laser field creates unusual Aharonov-Bohm oscillations that are usually expected in anisotropic rings. Furthermore, we have shown that intense laser fields can restore the isotropic physical properties in anisotropic quantum rings. In principle, all types of anisotropies (structural, effective masses, defects, etc.) can evolve as in isotropic rings in our present approach. Most importantly, we have found a continuous evolution of the energy spectra and intraband optical characteristics of structurally anisotropic quantum rings to those of isotropic rings in a controlled manner with the help of a laser field.

Quantum frustrated and correlated electron systems

Directory of Open Access Journals (Sweden)

P Thalmeier

2008-06-01

Full Text Available  Quantum phases and fluctuations in correlated electron systems with frustration and competing interactions are reviewed. In the localized moment case the S=1/2 J1 - J2 - model on a square lattice exhibits a rich phase diagram with magnetic as well as exotic hidden order phases due to the interplay of frustration and quantum fluctuations. Their signature in magnetocaloric quantities and the high field magnetization are surveyed. The possible quantum phase transitions are discussed and applied to layered vanadium oxides. In itinerant electron systems frustration is an emergent property caused by electron correlations. It leads to enhanced spin fluctuations in a very large region of momentum space and therefore may cause heavy fermion type low temperature anomalies as in the 3d spinel compound LiV2O4 . Competing on-site and inter-site electronic interactions in Kondo compounds are responsible for the quantum phase transition between nonmagnetic Kondo singlet phase and magnetic phase such as observed in many 4f compounds. They may be described by Kondo lattice and simplified Kondo necklace type models. Their quantum phase transitions are investigated by numerical exact diagonalization and analytical bond operator methods respectively.

Electronic properties of excited states in single InAs quantum dots

International Nuclear Information System (INIS)

Warming, Till

2009-01-01

The application of quantum-mechanical effects in semiconductor nanostructures enables the realization of novel opto-electronic devices. Examples are given by single-photon emitters and emitters of entangled photon pairs, both being essential for quantum cryptography, or for qubit systems as needed for quantum computing. InAs/GaAs quantum dots are one of the most promising candidates for such applications. A detailed knowledge of the electronic properties of quantum dots is a prerequisite for this development. The aim of this work is an experimental access to the detailed electronic structure of the excited states in single InAs/GaAs quantum dots including few-particle effects and in particular exchange interaction. The experimental approach is micro photoluminescence excitation spectroscopy (μPLE). One of the main difficulties using μPLE to probe single QDs is the unambiguous assignment of the observed resonances in the spectrum to specific transitions. By comparing micro photoluminescence (μPL) and μPLE spectra, the identification of the main resonances becomes possible. The key is given by the fine structure of the hot trion. Excitation spectroscopy on single charged QDs enables for the first time the complete observation of a non-trivial fine structure of an excitonic complex in a QD, the hot trion. Modelling based on eight-band k.p theory in combination with a configuration interaction scheme is in excellent agreement. Therewith the simulation also enables realistic predictions on the fine structure of the ground-state exciton which is of large importance for single quantum dot devices. Theory concludes from the observed transitions that the structural symmetry of the QDs is broken. Micro photoluminescence excitation spectroscopy combined with resonantly excited micro photoluminescence enables an optical access to the single particle states of the hole without the influence of few-particle coulomb interactions. Based on this knowledge the exciton binding

Electron Spins in Semiconductor Quantum Dots

NARCIS (Netherlands)

Hanson, R.

2005-01-01

This thesis describes a series of experiments aimed at understanding and controlling the behavior of the spin degree of freedom of single electrons, confined in semiconductor quantum dots. This research work is motivated by the prospects of using the electron spin as a quantum bit (qubit), the basic

Effect of interlayer tunneling on the electronic structure of bilayer cuprates and quantum phase transitions in carrier concentration and high magnetic field

International Nuclear Information System (INIS)

Ovchinnikov, S. G.; Makarov, I. A.; Shneyder, E. I.

2011-01-01

We present a theoretical study of the electronic structure of bilayer HTSC cuprates and its evolution under doping and in a high magnetic field. Analysis is based on the t-t′-t″-J* model in the generalized Hartree-Fock approximation. Possibility of tunneling between CuO2 layers is taken into account in the form of a nonzero integral of hopping between the orbitals of adjacent planes and is included in the scheme of the cluster form of perturbation theory. The main effect of the coupling between two CuO 2 layers in a unit cell is the bilayer splitting manifested in the presence of antibonding and bonding bands formed by a combination of identical bands of the layers themselves. A change in the doping level induces reconstruction of the band structure and the Fermi surface, which gives rise to a number of quantum phase transitions. A high external magnetic field leads to a fundamentally different form of electronic structure. Quantum phase transitions in the field are observed not only under doping, but also upon a variation of the field magnitude. Because of tunneling between the layers, quantum transitions are also split; as a result, a more complex sequence of the Lifshitz transitions than in single-layer structures is observed.

Terahertz Plasma Waves in Two Dimensional Quantum Electron Gas with Electron Scattering

International Nuclear Information System (INIS)

Zhang Liping

2015-01-01

We investigate the Terahertz (THz) plasma waves in a two-dimensional (2D) electron gas in a nanometer field effect transistor (FET) with quantum effects, the electron scattering, the thermal motion of electrons and electron exchange-correlation. We find that, while the electron scattering, the wave number along y direction and the electron exchange-correlation suppress the radiation power, but the thermal motion of electrons and the quantum effects can amplify the radiation power. The radiation frequency decreases with electron exchange-correlation contributions, but increases with quantum effects, the wave number along y direction and thermal motion of electrons. It is worth mentioning that the electron scattering has scarce influence on the radiation frequency. These properties could be of great help to the realization of practical THz plasma oscillations in nanometer FET. (paper)

Direct Identification of Atomic-Like Electronic Levels in InAs Nano crystal Quantum Dots

International Nuclear Information System (INIS)

Millo, O.; Katz, D.

1999-01-01

The size dependent level structure of InAs nano crystals in the range 2-7 nm in diameter is investigated using both tunneling and optical spectroscopies. The tunneling measurements are performed using a cryogenic scanning tunneling microscope on individual nano crystals that, are attached to a gold substrate via dithiol molecules. The tunneling I-V characteristics manifest an interplay between single electron charging and quantum size effects. We are able to directly identify quantum confined states of isolated InAs nano crystals having s and p symmetries. These states are observed in the I-V curves as two and six-fold single electron charging multiplets. Excellent agreement is found between the strongly allowed optical transitions [1] and the spacing of levels detected in the tunneling experiment. This correlation provides new information on the quantum-dot level structure, from which we conclude that the top-most valence band state has both s and p characteristics. The interplay between level structure singles electron charging of the nano crystals obeys an atomic-like Aufbau sequential electron level occupation

Antwerp Advanced Study Institute on Electronic Structure, Dynamics and Quantum Structural Properties of Condensed Matter

CERN Document Server

Camp, Piet

1985-01-01

The 1984 Advanced Study Institute on "Electronic Structure, Dynamics and Quantum Structural Properties of Condensed Matter" took place at the Corsendonk Conference Center, close to the City of Antwerpen, from July 16 till 27, 1984. This NATO Advanced Study Institute was motivated by the research in my Institute, where, in 1971, a project was started on "ab-initio" phonon calculations in Silicon. I~ is my pleasure to thank several instances and people who made this ASI possible. First of all, the sponsor of the Institute, the NATO Scientific Committee. Next, the co-sponsors: Agfa-Gevaert, Bell Telephone Mfg. Co. N.V., C & A, Esso Belgium·, CDC Belgium, Janssens Pharmaceutica, Kredietbank and the Scientific Office of the U.S. Army. Special thanks are due to Dr. P. Van Camp and Drs. H. Nachtegaele, who, over several months, prepared the practical aspects of the ASI with the secretarial help of Mrs. R.-M. Vandekerkhof. I also like to. thank Mrs. M. Cuyvers who prepared and organized the subject and material ...

Exact wave functions of two-electron quantum rings.

Science.gov (United States)

Loos, Pierre-François; Gill, Peter M W

2012-02-24

We demonstrate that the Schrödinger equation for two electrons on a ring, which is the usual paradigm to model quantum rings, is solvable in closed form for particular values of the radius. We show that both polynomial and irrational solutions can be found for any value of the angular momentum and that the singlet and triplet manifolds, which are degenerate, have distinct geometric phases. We also study the nodal structure associated with these two-electron states.

Semiconductor Quantum Electron Wave Transport, Diffraction, and Interference: Analysis, Device, and Measurement.

Science.gov (United States)

Henderson, Gregory Newell

Semiconductor device dimensions are rapidly approaching a fundamental limit where drift-diffusion equations and the depletion approximation are no longer valid. In this regime, quantum effects can dominate device response. To increase further device density and speed, new devices must be designed that use these phenomena to positive advantage. In addition, quantum effects provide opportunities for a new class of devices which can perform functions previously unattainable with "conventional" semiconductor devices. This thesis has described research in the analysis of electron wave effects in semiconductors and the development of methods for the design, fabrication, and characterization of quantum devices based on these effects. First, an exact set of quantitative analogies are presented which allow the use of well understood optical design and analysis tools for the development of electron wave semiconductor devices. Motivated by these analogies, methods are presented for modeling electron wave grating diffraction using both an exact rigorous coupled-wave analysis and approximate analyses which are useful for grating design. Example electron wave grating switch and multiplexer designs are presented. In analogy to thin-film optics, the design and analysis of electron wave Fabry-Perot interference filters are also discussed. An innovative technique has been developed for testing these (and other) electron wave structures using Ballistic Electron Emission Microscopy (BEEM). This technique uses a liquid-helium temperature scanning tunneling microscope (STM) to perform spectroscopy of the electron transmittance as a function of electron energy. Experimental results show that BEEM can resolve even weak quantum effects, such as the reflectivity of a single interface between materials. Finally, methods are discussed for incorporating asymmetric electron wave Fabry-Perot filters into optoelectronic devices. Theoretical and experimental results show that such structures could

Quantum chemical analysis of the electronic structure and Moessbauer spectra parameters for low spin cyanide- and pyridine-hemichromes

International Nuclear Information System (INIS)

Khleskov, V.I.; Kolpakov, E.V.; Smirnov, A.B.

1992-01-01

The work contains results of quantum-chemical calculations of electronic structure and Moessbauer spectra parameters for low spin S=1/2 hexa-coordinated ferri-porphyrin complexes with cyanide (CN) and pyridine (Py) as axial ligands. Theoretical results made it possible to explain experimentally observed regularity of anomalous quadrupole splitting decrease after substitution of Py-ligands by CN. Comparison of theoretical and experimental data indicated that 2 E g must be the ground state of investigated hemichromes. In this state unpaired electron symmetrically occupies d π -orbitals of Fe-ion. (orig.)

Electron billiards: einselection and quantum Darwinism

International Nuclear Information System (INIS)

Brunner, R.; Meisels, R.; Kuchar, F.; Akis, R.; Ferry, D.K.

2008-01-01

Full text: The measurement of open quantum systems has been a main topic since the advent of quantum theory. It is a basic ingredient in quantum information processing. Here, the border where the two worlds of classical and quantum mechanics meet is of significant importance due to the problem of measurement. It has been shown by Zurek that in an open system the environment imposes so-called superselection rules leading to environment-induced superselection (einselection). This means that a set of preferred states (pointer states) survive the coupling with the environment. These pointer states are characterized by their robustness and their ability to create offspring. This ability to advertise information about themselves makes it possible for different observers to measure the same information. The natural promotion of certain information in a quantum system is known as quantum Darwinism. The 'fitness' in the Darwinian sense of the selected states is essentially a measure of their classicality. That is in order to measure a quantum system objectively a system has to be designed where the transition between the classical and quantum world is observable. In this respect we show by a combination of experiment and calculation that an array of electron billiards (open quantum dots) is very well suited. We demonstrate that einselection takes place in electron billiards and a set of pointer states arises. We illustrate that beside the 'regular' (single dot) pointer states a new type of einselected states arise when two or more quantum dots are coupled together and to the environment. This new type of states can not be represented by a linear combination of pointer states of the individual dots. Finally, we discuss the propensity of the new type of einselected states to make offspring in order to see if quantum Darwinism is in action in the array of electron billiards.(author)

Electron-electron scattering and mobilities in semiconductors and quantum wells

International Nuclear Information System (INIS)

Lyo, S.K.

1986-01-01

The effect of electron-electron scattering on the mobility in semiconductors and semiconductor quantum wells is examined. A general exact formula is derived for the mobility, when the electron-electron collision rate is much faster than other scattering rates such as those by ionized impurities and phonons. In this limit, the transport relaxation rate is independent of the carrier's energy and contributions to the inverse mobility from individual scattering mechanism add up. The mobility becomes significantly reduced from its value in the absence of electron-electron scattering. When the collision rates are not necessarily dominated by electron-electron scattering, the mobility is calculated by the Kohler-Sondheimer variational method in the presence of ionized-impurity scattering and acoustic-phonon scattering in a nondegenerate two-dimensional quantum well

About the structure of quantum intermediate state of superconductors

International Nuclear Information System (INIS)

Ledenev, O.P.

2008-01-01

The calculation of spatial structure of a quantum intermediate state in Type I superconductors is completed. Theoretical model of thermodynamics of considered state was proposed by Andreev. It is shown, that in a quantum case, the period of structure appears significantly smaller and has different dependence on both the magnetic field and temperature than in the classical intermediate Landau state. The decrease of thickness of normal layers results in increase of characteristic distance between the quantum Andreev levels of electronic excitations, and the transition to the quantum intermediate from classical state is realized at higher temperatures ∼1 K, than it was supposed in previous works. The comparison of calculation data with experimental results, for example using the sample of mono-crystal gallium, is conducted

Electron Raman scattering in a cylindrical quantum dot

International Nuclear Information System (INIS)

Zhong Qinghu; Yi Xuehua

2012-01-01

Electron Raman scattering (ERS) is investigated in a CdS cylindrical quantum dot (QD). The differential cross section is calculated as a function of the scattering frequency and the size of the QD. Single parabolic conduction and valence bands are assumed, and singularities in the spectrum are found and interpreted. The selection rules for the processes are also studied. The ERS studied here can be used to provide direct information about the electron band structure of these systems. (semiconductor physics)

Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier

International Nuclear Information System (INIS)

Nevedomskiy, V. N.; Bert, N. A.; Chaldyshev, V. V.; Preobrazhenskiy, V. V.; Putyato, M. A.; Semyagin, B. R.

2013-01-01

Electron microscopy studies of GaAs-based structures grown by molecular beam epitaxy and containing arrays of semiconductor InAs quantum dots and metal As quantum dots are performed. The array of InAs quantum dots is formed by the Stranski-Krastanov mechanism and consists of vertically coupled pairs of quantum dots separated by a GaAs spacer 10 nm thick. To separate the arrays of semiconductor and metal quantum dots and to prevent diffusion-induced mixing, the array of InAs quantum dots is overgrown with an AlAs barrier layer 5 or 10 nm thick, after which a GaAs layer is grown at a comparatively low temperature (180°C). The array of As quantum dots is formed in an As-enriched layer of the low-temperature GaAs by means of post-growth annealing at 400–760°C for 15 min. It is established that the AlAs barrier layer has a surface profile corresponding to that of a subbarrier layer with InAs quantum dots. The presence of such a profile causes the formation of V-shaped structural defects upon subsequent overgrowth with the GaAs layer. Besides, it was obtained that AlAs layer is thinned over the InAs quantum dots tops. It is shown that the AlAs barrier layer in the regions between the InAs quantum dots effectively prevents the starting diffusion of excess As at annealing temperatures up to 600°C. However, the concentration of mechanical stresses and the reduced thickness of the AlAs barrier layer near the tops of the InAs quantum dots lead to local barrier breakthroughs and the diffusion of As quantum dots into the region of coupled pairs of InAs quantum dots at higher annealing temperatures

Overview of nuclear structure with electrons

International Nuclear Information System (INIS)

Geesaman, D. F.

1999-01-01

Following a broad summary of the author's view of nuclear structure in 1974, he will discuss the key elements they have learned in the past 25 years from the research at the M.I.T. Bates Linear Accelerator center and its sister electron accelerator laboratories. Electron scattering has provided the essential measurements for most of the progress. The future is bright for nuclear structure research as their ability to realistically calculate nuclear structure observables has dramatically advanced and they are increasingly able to incorporate an understanding of quantum chromodynamics into their picture of the nucleus

Quantum cluster algebra structures on quantum nilpotent algebras

CERN Document Server

Goodearl, K R

2017-01-01

All algebras in a very large, axiomatically defined class of quantum nilpotent algebras are proved to possess quantum cluster algebra structures under mild conditions. Furthermore, it is shown that these quantum cluster algebras always equal the corresponding upper quantum cluster algebras. Previous approaches to these problems for the construction of (quantum) cluster algebra structures on (quantized) coordinate rings arising in Lie theory were done on a case by case basis relying on the combinatorics of each concrete family. The results of the paper have a broad range of applications to these problems, including the construction of quantum cluster algebra structures on quantum unipotent groups and quantum double Bruhat cells (the Berenstein-Zelevinsky conjecture), and treat these problems from a unified perspective. All such applications also establish equality between the constructed quantum cluster algebras and their upper counterparts.

Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design

KAUST Repository

Wu, Feng; Sun, Haiding; Ajia, Idris A.; Roqan, Iman S.; Zhang, Daliang; Dai, Jiangnan; Chen, Changqing; Feng, Zhe Chuan; Li, Xiaohang

2017-01-01

Significant internal quantum efficiency (IQE) enhancement of GaN/AlGaN multiple quantum wells (MQWs) emitting at similar to 350 nm was achieved via a step quantum well (QW) structure design. The MQW structures were grown on AlGaN/AlN/sapphire templates by metal-organic chemical vapor deposition (MOCVD). High resolution x-ray diffraction (HR-XRD) and scanning transmission electron microscopy (STEM) were performed, showing sharp interface of the MQWs. Weak beam dark field imaging was conducted, indicating a similar dislocation density of the investigated MQWs samples. The IQE of GaN/AlGaN MQWs was estimated by temperature dependent photoluminescence (TDPL). An IQE enhancement of about two times was observed for the GaN/AlGaN step QW structure, compared with conventional QW structure. Based on the theoretical calculation, this IQE enhancement was attributed to the suppressed polarization-induced field, and thus the improved electron-hole wave-function overlap in the step QW.

Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design

KAUST Repository

Wu, Feng

2017-05-03

Significant internal quantum efficiency (IQE) enhancement of GaN/AlGaN multiple quantum wells (MQWs) emitting at similar to 350 nm was achieved via a step quantum well (QW) structure design. The MQW structures were grown on AlGaN/AlN/sapphire templates by metal-organic chemical vapor deposition (MOCVD). High resolution x-ray diffraction (HR-XRD) and scanning transmission electron microscopy (STEM) were performed, showing sharp interface of the MQWs. Weak beam dark field imaging was conducted, indicating a similar dislocation density of the investigated MQWs samples. The IQE of GaN/AlGaN MQWs was estimated by temperature dependent photoluminescence (TDPL). An IQE enhancement of about two times was observed for the GaN/AlGaN step QW structure, compared with conventional QW structure. Based on the theoretical calculation, this IQE enhancement was attributed to the suppressed polarization-induced field, and thus the improved electron-hole wave-function overlap in the step QW.

Molecular-structure control of ultrafast electron injection at cationic porphyrin-CdTe quantum dot interfaces

KAUST Repository

Aly, Shawkat Mohammede

2015-03-05

Charge transfer (CT) at donor (D)/acceptor (A) interfaces is central to the functioning of photovoltaic and light-emitting devices. Understanding and controlling this process on the molecular level has been proven to be crucial for optimizing the performance of many energy-challenge relevant devices. Here, we report the experimental observations of controlled on/off ultrafast electron transfer (ET) at cationic porphyrin-CdTe quantum dot (QD) interfaces using femto- and nanosecond broad-band transient absorption (TA) spectroscopy. The time-resolved data demonstrate how one can turn on/off the electron injection from porphyrin to the CdTe QDs. With careful control of the molecular structure, we are able to tune the electron injection at the porphyrin-CdTe QD interface from zero to very efficient and ultrafast. In addition, our data demonstrate that the ET process occurs within our temporal resolution of 120 fs, which is one of the fastest times recorded for organic photovoltaics. © 2015 American Chemical Society.

Quantum-Dynamical Theory of Electron Exchange Correlation

Directory of Open Access Journals (Sweden)

Burke Ritchie

2013-01-01

aggregate, is elucidated. The relationship depends on the use of spin-dependent quantum trajectories (SDQT to evaluate Coulomb’s law between any two electrons as an instantaneous interaction in space and time rather than as a quantum-mean interaction in the form of screening and exchange potentials. Hence FDS depends in an ab initio sense on the inference of SDQT from Dirac’s equation, which provides for relativistic Lorentz invariance and a permanent magnetic moment (or spin in the electron’s equation of motion. Schroedinger’s time-dependent equation can be used to evaluate the SDQT in the nonrelativistic regime of electron velocity. Remarkably FDS is a relativistic property of an ensemble of electron, even though it is of order c0 in the nonrelativistic limit, in agreement with experimental observation. Finally it is shown that covalent versus separated-atoms limits can be characterized by the SDQT. As an example of the use of SDQT in a canonical structure problem, the energies of the 1Σg and 3Σu states of H2 are calculated and compared with the accurate variational energies of Kolos and Wolniewitz.

Multi-interface roughness effects on electron mobility in a Ga0.5In0.5P/GaAs multisubband coupled quantum well structure

International Nuclear Information System (INIS)

Sahu, Trinath; Shore, K Alan

2009-01-01

We analyse the effect of interface roughness scattering on low temperature electron mobility μ n mediated by intersubband interactions in a multisubband coupled Ga 0.5 In 0.5 P/GaAs quantum well structure. We consider a barrier δ-doped double quantum well system in which the subband electron mobility is limited by the interface roughness scattering μ IR n and ionized impurity scattering μ imp n . We analyse the effect of the intersubband interaction and coupling of subband wavefunctions through the barrier on the intrasubband and intersubband transport scattering rates. We show that the intersubband interaction controls the roughness potential of different interfaces through the dielectric screening matrix. In the case of lowest subband occupancy, the mobility is mainly governed by the interface roughness of the central barrier. Whereas when two subbands are occupied, the interface roughness of the outer barrier predominates due to intersubband effects. The influence of the intersubband interaction also exhibits interesting results on the well width up to which the interface roughness dominates in a double quantum well structure

Electronic properties of assemblies of zno quantum dots

NARCIS (Netherlands)

Roest, Aarnoud Laurens

2003-01-01

Electron transport in an assembly of ZnO quantum dots has been studied using an electrochemically gated transistor. The electron mobility shows a step-wise increase as a function of the electron occupation per quantum dot. When the occupation number is below two, transport occurs by tunnelling

Quantum-well charge and voltage distribution in a metal–insulator–semiconductor structure upon resonant electron Tunneling

Energy Technology Data Exchange (ETDEWEB)

Vexler, M. I., E-mail: vexler@mail.ioffe.ru; Illarionov, Yu. Yu.; Grekhov, I. V. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

2017-04-15

The prerequisites for electron storage in the quantum well of a metal–oxide–p{sup +}-Si resonant-tunneling structure and the effect of the stored charge on the voltage distribution are theoretically investigated. Systems with SiO{sub 2}, HfO{sub 2}, and TiO{sub 2} insulators are studied. It is demonstrated that the occurrence of a charge in the well in the case of resonant transport can be expected in structures on substrates with an acceptor concentration from (5–6) × 10{sup 18} to (2–3) × 10{sup 19} cm{sup –3} in the range of oxide thicknesses dependent on this concentration. In particular, the oxide layer thickness in the structures with SiO{sub 2}/p{sup +}-Si(10{sup 19} cm{sup –3}) should exceed ~3 nm. The electron density in the well can reach ~10{sup 12} cm{sup –2} and higher. However, the effect of this charge on the electrostatics of the structure becomes noticeable only at relatively high voltages far above the activation of resonant transport through the first subband.

Single-electron-occupation metal-oxide-semiconductor quantum dots formed from efficient poly-silicon gate layout

Energy Technology Data Exchange (ETDEWEB)

Carroll, Malcolm S.; rochette, sophie; Rudolph, Martin; Roy, A. -M.; Curry, Matthew Jon; Ten Eyck, Gregory A.; Manginell, Ronald P.; Wendt, Joel R.; Pluym, Tammy; Carr, Stephen M; Ward, Daniel Robert; Lilly, Michael; pioro-ladriere, michel

2017-07-01

We introduce a silicon metal-oxide-semiconductor quantum dot structure that achieves dot-reservoir tunnel coupling control without a dedicated barrier gate. The elementary structure consists of two accumulation gates separated spatially by a gap, one gate accumulating a reservoir and the other a quantum dot. Control of the tunnel rate between the dot and the reservoir across the gap is demonstrated in the single electron regime by varying the reservoir accumulation gate voltage while compensating with the dot accumulation gate voltage. The method is then applied to a quantum dot connected in series to source and drain reservoirs, enabling transport down to the single electron regime. Finally, tuning of the valley splitting with the dot accumulation gate voltage is observed. This split accumulation gate structure creates silicon quantum dots of similar characteristics to other realizations but with less electrodes, in a single gate stack subtractive fabrication process that is fully compatible with silicon foundry manufacturing.

Multisubband electron mobility in a parabolic quantum well structure under the influence of an applied electric field

International Nuclear Information System (INIS)

Sahoo, N.; Sahu, T.

2014-01-01

We study the multisubband electron mobility in a barrier delta doped Al x Ga 1−x As parabolic quantum well structure under the influence of an applied electric field perpendicular to the interface plane. We consider the alloy fraction x = 0.3 for barriers and vary x from 0.0 to 0.1 for the parabolic well. Electrons diffuse into the well and confine within the triangular like potentials near the interfaces due to Coulomb interaction with ionized donors. The parabolic structure potential, being opposite in nature, partly compensates the Coulomb potential. The external electric field further amends the potential structure leading to an asymmetric potential profile. Accordingly the energy levels, wave functions and occupation of subbands change. We calculate low temperature electron mobility as a function of the electric field and show that when two subbands are occupied, the mobility is mostly dominated by ionised impurity scattering mediated by intersubband effects. As the field increases transition from double subband to single subband occupancy occurs. A sudden enhancement in mobility is obtained due to curtailment of intersubband effects. Thereafter the mobility is governed by both impurity and alloy disorder scatterings. Our analysis of mobility as a function of the electric field for different structural parameters shows interesting results. (semiconductor physics)

Instructional Approach to Molecular Electronic Structure Theory

Science.gov (United States)

Dykstra, Clifford E.; Schaefer, Henry F.

1977-01-01

Describes a graduate quantum mechanics projects in which students write a computer program that performs ab initio calculations on the electronic structure of a simple molecule. Theoretical potential energy curves are produced. (MLH)

Broadening of Plasmonic Resonance Due to Electron Collisions with Nanoparticle Boundary: а Quantum Mechanical Consideration

DEFF Research Database (Denmark)

Uskov, Alexander; Protsenko, Igor E.; Mortensen, N. Asger

2014-01-01

We present a quantum mechanical approach to calculate broadening of plasmonic resonances in metallic nanostructures due to collisions of electrons with the surface of the structure. The approach is applicable if the characteristic size of the structure is much larger than the de Broglie electron...

Quantum tunneling resonant electron transfer process in Lorentzian plasmas

International Nuclear Information System (INIS)

Hong, Woo-Pyo; Jung, Young-Dae

2014-01-01

The quantum tunneling resonant electron transfer process between a positive ion and a neutral atom collision is investigated in nonthermal generalized Lorentzian plasmas. The result shows that the nonthermal effect enhances the resonant electron transfer cross section in Lorentzian plasmas. It is found that the nonthermal effect on the classical resonant electron transfer cross section is more significant than that on the quantum tunneling resonant charge transfer cross section. It is shown that the nonthermal effect on the resonant electron transfer cross section decreases with an increase of the Debye length. In addition, the nonthermal effect on the quantum tunneling resonant electron transfer cross section decreases with increasing collision energy. The variation of nonthermal and plasma shielding effects on the quantum tunneling resonant electron transfer process is also discussed

Classical behavior of few-electron parabolic quantum dots

International Nuclear Information System (INIS)

Ciftja, O.

2009-01-01

Quantum dots are intricate and fascinating systems to study novel phenomena of great theoretical and practical interest because low dimensionality coupled with the interplay between strong correlations, quantum confinement and magnetic field creates unique conditions for emergence of fundamentally new physics. In this work we consider two-dimensional semiconductor quantum dot systems consisting of few interacting electrons confined in an isotropic parabolic potential. We study the many-electron quantum ground state properties of such systems in presence of a perpendicular magnetic field as the number of electrons is varied using exact numerical diagonalizations and other approaches. The results derived from the calculations of the quantum model are then compared to corresponding results for a classical model of parabolically confined point charges who interact with a Coulomb potential. We find that, for a wide range of parameters and magnetic fields considered in this work, the quantum ground state energy is very close to the classical energy of the most stable classical configuration under the condition that the classical energy is properly adjusted to incorporate the quantum zero point motion.

Quantum chemical studies on electronic structure and photodynamics of ruthenium complexes

International Nuclear Information System (INIS)

Freitag, L.

2015-01-01

Ruthenium complexes have found their way into many applications in the last decades. Among those, ruthenium polypyridyl compounds have been employed as light harvesting devices and photosensitisers in artificial photosynthesis and molecular photocatalysis. Ruthenium nitrosyl complexes are rapidly emerging as NO delivery agents to biological tissues with promising applications in anticancer photodynamic therapy, thanks to their ability to photorelease nitric oxide (NO). This thesis encompasses computational studies on reactivity, electronic structure, excited states and photodynamics of several ruthenium nitrosyl and polypyridyl complexes. The first part of the thesis deals with ruthenium nitrosyls. The cis-trans isomerisation mechanism of RuHIndNO, a ruthenium nitrosyl derivate of the prominent anti-cancer drug candidate KP1019, is investigated with density functional theory calculations. Next, the electronic structure of the ground and the first excited triplet state of RuHIndNO is studied with multiconfigurational methods including the density-matrix renormalisation group (DMRG). The obtained multiconfigurational wavefunctions and DMRG-based orbital entanglement analysis provides theoretical insight into the non-innocence of the NO ligand in nitrosyl complexes by describing the electron correlation in the Ru--NO bond and assigning oxidation states to the metal and the NO ligand. Another study is performed on excited states of ruthenium nitrosyl complexes with quantum chemical calculations and surface-hopping dynamics to obtain insights into the photodissociation mechanism of NO. The second part of this thesis is devoted to the excited states and photophysics of ruthenium polypyridyl complexes. Accurate excitation energies of tris(2,2-bipyridine)ruthenium (II), the prototype ruthenium polypyridyl are obtained with multiconfigurational calculations assisted by an orbital entanglement analysis. Subsequently, the effect of the ligand substitution on the photophysics

Nature does not rely on long-lived electronic quantum coherence for photosynthetic energy transfer

Science.gov (United States)

Duan, Hong-Guang; Prokhorenko, Valentyn I.; Cogdell, Richard J.; Ashraf, Khuram; Stevens, Amy L.; Thorwart, Michael; Miller, R. J. Dwayne

2017-08-01

During the first steps of photosynthesis, the energy of impinging solar photons is transformed into electronic excitation energy of the light-harvesting biomolecular complexes. The subsequent energy transfer to the reaction center is commonly rationalized in terms of excitons moving on a grid of biomolecular chromophores on typical timescales Olson protein, in which interference oscillatory signals up to 1.5 ps were reported and interpreted as direct evidence of exceptionally long-lived electronic quantum coherence. Here, we show that the optical 2D photon echo spectra of this complex at ambient temperature in aqueous solution do not provide evidence of any long-lived electronic quantum coherence, but confirm the orthodox view of rapidly decaying electronic quantum coherence on a timescale of 60 fs. Our results can be considered as generic and give no hint that electronic quantum coherence plays any biofunctional role in real photoactive biomolecular complexes. Because in this structurally well-defined protein the distances between bacteriochlorophylls are comparable to those of other light-harvesting complexes, we anticipate that this finding is general and directly applies to even larger photoactive biomolecular complexes.

Analysis of self-organized In(Ga)As quantum structures with the scanning transmission electron microscope; Analyse selbstorganisierter In(Ga)As-Quantenstrukturen mit dem Raster-Transmissionselektronenmikroskop

Energy Technology Data Exchange (ETDEWEB)

Sauerwald, Andres

2008-05-27

Aim of this thesis was to apply the analytical methods of the scanning transmission electron microscopy to the study of self-organized In(Ga)As quantum structures. With the imaging methods Z contrast and bright field (position resolutions in the subnanometer range) and especially with the possibilities of the quantitative chemical EELS analysis of the scanning transmission electron microscope (STEM) fundamental questions concerning morphology and chemical properties of self-organized quantum structures should be answered. By the high position resolution of the STEM among others essentail morphological and structural parameters in the growth behaviour of 'dot in a well' (DWell) structures and of vertically correlated quantum dots (QDs) could be analyzed. For the optimization of DWell structures samples were studied, the nominal InAs-QD growth position was directedly varied within the embedding InGaAs quantum wells. The STEM offers in connection with the EELS method a large potential for the chemical analysis of quantum structures. Studied was a sample series of self-organized InGaAs/GaAs structures on GaAs substrate, the stress of which was changed by varying the Ga content of the INGaAs material between 2.4 % and 4.3 %. [German] Ziel dieser Arbeit war es, die analytischen Methoden der Raster-Transmissionselektronenmikroskopie zur Untersuchung selbstorganisierter In(Ga)As-Quantenstrukturen anzuwenden. Mit den abbildenden Methoden Z-Kontrast und Hellfeld (Ortsaufloesungen im Subnanometerbereich) und insbesondere mit den Moeglichkeiten der quantitativen chemischen EELS-Analyse des Raster-Transmissionselektronenmikroskops (RTEMs) sollten grundsaetzliche Fragestellungen hinsichtlich der Morphologie und der chemischen Eigenschaften selbstorganisierter Quantenstrukturen beantwortet werden. Durch die hohe Ortsaufloesung des RTEMs konnten u.a. essentielle morphologische und strukturelle Parameter im Wachstumsverhalten von 'Dot in a Well

Electron Raman scattering in asymmetrical multiple quantum wells

International Nuclear Information System (INIS)

Betancourt-Riera, R; Rosas, R; Marin-Enriquez, I; Riera, R; Marin, J L

2005-01-01

Optical properties of asymmetrical multiple quantum wells for the construction of quantum cascade lasers are calculated, and expressions for the electronic states of asymmetrical multiple quantum wells are presented. The gain and differential cross-section for an electron Raman scattering process are obtained. Also, the emission spectra for several scattering configurations are discussed, and the corresponding selection rules for the processes involved are studied; an interpretation of the singularities found in the spectra is given. The electron Raman scattering studied here can be used to provide direct information about the efficiency of the lasers

Quantum Hall Effect: proposed multi-electron tunneling experiment

International Nuclear Information System (INIS)

Kostadinov, I.Z.

1985-11-01

Here we propose a tunneling experiment for the fractional and Integral Quantum Hall Effect. It may demonstrate multi-electron tunneling and may provide information about the nature of the macroscopic quantum states of 2D electronic liquid or solid. (author)

Electron transport in quantum wires: possible current instability mechanism

International Nuclear Information System (INIS)

Sablikov, V.A.

2001-01-01

The electrons nonlinear and dynamic transition in quantum wires connecting the electron reservoirs, are studies with an account of the Coulomb interaction distribution of electron density between the reservoirs and the wire. It is established that there exist two processes, leading to electrical instability in such structure. One of them is expressed in form of multistability of the charge accumulated in the wire, and negative differential conductivity. The other one is connected with origination of negative dynamic conductivity in the narrow frequency range near the resonance frequency of the charge waves on the wire length [ru

Electronic Structure of ZnO Quantum Dots studied by High-frequency EPR, ESE, ENDOR and ODMR Spectroscopy

NARCIS (Netherlands)

Baranov, P.G.; Romanov, N.G.; Bundakova, A.P.; de Mello-Donega, Celso; Schmidt, J.

2016-01-01

High-frequency electron paramagnetic resonance (EPR), electron spin echo (ESE), electron-nuclear double resonance (ENDOR) and optically detected magnetic resonance (ODMR) were applied for the investigation of the electronic properties of ZnO colloidal quantum dots (QDs) which consist of a ZnO

Quantum interference measurement of spin interactions in a bio-organic/semiconductor device structure

Science.gov (United States)

Deo, Vincent; Zhang, Yao; Soghomonian, Victoria; Heremans, Jean J.

2015-03-01

Quantum interference is used to measure the spin interactions between an InAs surface electron system and the iron center in the biomolecule hemin in nanometer proximity in a bio-organic/semiconductor device structure. The interference quantifies the influence of hemin on the spin decoherence properties of the surface electrons. The decoherence times of the electrons serve to characterize the biomolecule, in an electronic complement to the use of spin decoherence times in magnetic resonance. Hemin, prototypical for the heme group in hemoglobin, is used to demonstrate the method, as a representative biomolecule where the spin state of a metal ion affects biological functions. The electronic determination of spin decoherence properties relies on the quantum correction of antilocalization, a result of quantum interference in the electron system. Spin-flip scattering is found to increase with temperature due to hemin, signifying a spin exchange between the iron center and the electrons, thus implying interactions between a biomolecule and a solid-state system in the hemin/InAs hybrid structure. The results also indicate the feasibility of artificial bioinspired materials using tunable carrier systems to mediate interactions between biological entities.

THE QUANTUM-WELL STRUCTURES OF SELF ELECTROOPTIC-EFFECT DEVICES AND GALLIUM-ARSENIDE

Directory of Open Access Journals (Sweden)

Mustafa TEMİZ

1996-02-01

Full Text Available Multiple quantum-well (MQW electroabsorptive self electro optic-effect devices (SEEDs are being extensively studied for use in optical switching and computing. The self electro-optic-effect devices which has quantum-well structures is a new optoelectronic technology with capability to obtain both optical inputs and outputs for Gallium-Arsenide/Aluminum Gallium-Arsenide (GaAs/AlGaAs electronic circuits. The optical inputs and outputs are based on quantum-well absorptive properties. These quantum-well structures consist of many thin layers of semiconductors materials of GaAs/AlGaAs which have emerged some important directions recently. The most important advance in the physics of these materials since the early days has been invention of the heterojunction structures which is based at present on GaAs technology. GaAs/AlGaAs structures present some important advantages to relevant band gap and index of refraction which allow to form the quantum-well structures and also to make semiconductor lasers, dedectors and waveguide optical switches.

Gated-controlled electron pumping in connected quantum rings

International Nuclear Information System (INIS)

Lima, R.P.A.; Domínguez-Adame, F.

2014-01-01

We study the electronic transport across connected quantum rings attached to leads and subjected to time-harmonic side-gate voltages. Using the Floquet formalism, we calculate the net pumped current generated and controlled by the side-gate voltage. The control of the current is achieved by varying the phase shift between the two side-gate voltages as well as the Fermi energy. In particular, the maximum current is reached when the side-gate voltages are in quadrature. This new design based on connected quantum rings controlled without magnetic fields can be easily integrated in standard electronic devices. - Highlights: • We introduce and study a minimal setup to pump electrons through connected quantum rings. • Quantum pumping is achieved by time-harmonic side-gate voltages instead of the more conventional time-dependent magnetic fluxes. • Our new design could be easily integrated in standard electronic devices

Approximate calculation of electronic energy levels of axially symmetric quantum dot and quantum ring by using energy dependent effective mass

International Nuclear Information System (INIS)

Yu-Min, Liu; Zhong-Yuan, Yu; Xiao-Min, Ren

2009-01-01

Calculations of electronic structures about the semiconductor quantum dot and the semiconductor quantum ring are presented in this paper. To reduce the calculation costs, for the quantum dot and the quantum ring, their simplified axially symmetric shapes are utilized in our analysis. The energy dependent effective mass is taken into account in solving the Schrödinger equations in the single band effective mass approximation. The calculated results show that the energy dependent effective mass should be considered only for relatively small volume quantum dots or small quantum rings. For large size quantum materials, both the energy dependent effective mass and the parabolic effective mass can give the same results. The energy states and the effective masses of the quantum dot and the quantum ring as a function of geometric parameters are also discussed in detail. (general)

Indication for quantum Darwinism in electron billiards

Science.gov (United States)

Brunner, R.; Akis, R.; Meisels, R.; Kuchar, F.; Ferry, D. K.

2010-02-01

In this paper, we investigate the dynamics in electron billiards by using classical and quantum mechanical calculations. We report on the existence of pointer states in single-dot and double-dot electron billiards. Additionally, we show that the two types of pointer states have the propensity to create offspring, i.e. they can be observed in the individual modes propagating between the external reservoirs. This can be understood as an indication that quantum Darwinism is present in the electron billiards.

Universal quantum gates on electron-spin qubits with quantum dots inside single-side optical microcavities.

Science.gov (United States)

Wei, Hai-Rui; Deng, Fu-Guo

2014-01-13

We present some compact quantum circuits for a deterministic quantum computing on electron-spin qubits assisted by quantum dots inside single-side optical microcavities, including the CNOT, Toffoli, and Fredkin gates. They are constructed by exploiting the giant optical Faraday rotation induced by a single-electron spin in a quantum dot inside a single-side optical microcavity as a result of cavity quantum electrodynamics. Our universal quantum gates have some advantages. First, all the gates are accomplished with a success probability of 100% in principle. Second, our schemes require no additional electron-spin qubits and they are achieved by some input-output processes of a single photon. Third, our circuits for these gates are simple and economic. Moreover, our devices for these gates work in both the weak coupling and the strong coupling regimes, and they are feasible in experiment.

Tuning the electronic structure of bulk FeSe with chemical pressure using quantum oscillations and angle resolved photoemission spectroscopy (ARPES)

Science.gov (United States)

Coldea, Amalia

FeSe is a unique and intriguing superconductor which can be tuned into a high temperature superconducting state using applied pressure, chemical intercalation and surface doping. In the absence of magnetism, the structural transition in FeSe is believed to be electronically driven, with the orbital degrees of freedom playing an important part. This scenario supports the stabilization of a nematic state in FeSe, which manifests as a Fermi surface deformation in the presence of strong interactions, as detected by ARPES. Another manifestation of the nematicity is the enhanced nematic susceptibility determined from elastoresistance measurements under applied strain. Isovalent Sulphur substitution onto the Selenium site constitutes a chemical pressure, which subtly modifies the electronic structure of FeSe, suppressing the structural transition without inducing high temperature superconductivity. I will present the evolution of the electronic structure with chemical pressure in FeSe, as determined from quantum oscillations and ARPES studies and I will discuss the suppression of the nematic electronic state and the role of electronic correlations. Experiments were performed at high magnetic field facilities in Tallahassee, Nijmegen and Toulouse and Diamond Light Source, UK. This work is mainly supported by EPSRC, UK (EP/I004475/1, EP/I017836/1) and I acknowledge my collaborators from Refs. .

Enhanced Emission of Quantum System in Si-Ge Nanolayer Structure.

Science.gov (United States)

Huang, Zhong-Mei; Huang, Wei-Qi; Dong, Tai-Ge; Wang, Gang; Wu, Xue-Ke

2016-12-01

It is very interesting that the enhanced peaks near 1150 and 1550 nm are observed in the photoluminescence (PL) spectra in the quantum system of Si-Ge nanolayer structure, which have the emission characteristics of a three-level system with quantum dots (QDs) pumping and emission of quasi-direct-gap band, in our experiment. In the preparing process of Si-Ge nanolayer structure by using a pulsed laser deposition method, it is discovered that the nanocrystals of Si and Ge grow in the (100) and (111) directions after annealing or electron beam irradiation. The enhanced PL peaks with multi-longitudinal-mode are measured at room temperature in the super-lattice of Si-Ge nanolayer quantum system on SOI.

Quantum mechanical effects in plasmonic structures with subnanometre gaps.

Science.gov (United States)

Zhu, Wenqi; Esteban, Ruben; Borisov, Andrei G; Baumberg, Jeremy J; Nordlander, Peter; Lezec, Henri J; Aizpurua, Javier; Crozier, Kenneth B

2016-06-03

Metallic structures with nanogap features have proven highly effective as building blocks for plasmonic systems, as they can provide a wide tuning range of operating frequencies and large near-field enhancements. Recent work has shown that quantum mechanical effects such as electron tunnelling and nonlocal screening become important as the gap distances approach the subnanometre length-scale. Such quantum effects challenge the classical picture of nanogap plasmons and have stimulated a number of theoretical and experimental studies. This review outlines the findings of many groups into quantum mechanical effects in nanogap plasmons, and discusses outstanding challenges and future directions.

Distribution of tunnelling times for quantum electron transport

International Nuclear Information System (INIS)

Rudge, Samuel L.; Kosov, Daniel S.

2016-01-01

In electron transport, the tunnelling time is the time taken for an electron to tunnel out of a system after it has tunnelled in. We define the tunnelling time distribution for quantum processes in a dissipative environment and develop a practical approach for calculating it, where the environment is described by the general Markovian master equation. We illustrate the theory by using the rate equation to compute the tunnelling time distribution for electron transport through a molecular junction. The tunnelling time distribution is exponential, which indicates that Markovian quantum tunnelling is a Poissonian statistical process. The tunnelling time distribution is used not only to study the quantum statistics of tunnelling along the average electric current but also to analyse extreme quantum events where an electron jumps against the applied voltage bias. The average tunnelling time shows distinctly different temperature dependence for p- and n-type molecular junctions and therefore provides a sensitive tool to probe the alignment of molecular orbitals relative to the electrode Fermi energy.

Quantum phase transitions of strongly correlated electron systems

International Nuclear Information System (INIS)

Imada, Masatoshi

1998-01-01

Interacting electrons in solids undergo various quantum phase transitions driven by quantum fluctuations. The quantum transitions take place at zero temperature by changing a parameter to control quantum fluctuations rather than thermal fluctuations. In contrast to classical phase transitions driven by thermal fluctuations, the quantum transitions have many different features where quantum dynamics introduces a source of intrinsic fluctuations tightly connected with spatial correlations and they have been a subject of recent intensive studies as we see below. Interacting electron systems cannot be fully understood without deep analyses of the quantum phase transitions themselves, because they are widely seen and play essential roles in many phenomena. Typical and important examples of the quantum phase transitions include metal-insulator transitions, (2, 3, 4, 5, 6, 7, 8, 9) metal-superconductor transitions, superconductor-insulator transitions, magnetic transitions to antiferromagnetic or ferromagnetic phases in metals as well as in Mott insulators, and charge ordering transitions. Here, we focus on three different types of transitions

Electronic properties of superlattices on quantum rings.

Science.gov (United States)

da Costa, D R; Chaves, A; Ferreira, W P; Farias, G A; Ferreira, R

2017-04-26

We present a theoretical study of the one-electron states of a semiconductor-made quantum ring (QR) containing a series of piecewise-constant wells and barriers distributed along the ring circumference. The single quantum well and the superlattice cases are considered in detail. We also investigate how such confining potentials affect the Aharonov-Bohm like oscillations of the energy spectrum and current in the presence of a magnetic field. The model is simple enough so as to allow obtaining various analytical or quasi-analytical results. We show that the well-in-a-ring structure presents enhanced localization features, as well as specific geometrical resonances in its above-barrier spectrum. We stress that the superlattice-in-a-ring structure allows giving a physical meaning to the often used but usually artificial Born-von-Karman periodic conditions, and discuss in detail the formation of energy minibands and minigaps for the circumferential motion, as well as several properties of the superlattice eigenstates in the presence of the magnetic field. We obtain that the Aharonov-Bohm oscillations of below-barrier miniband states are reinforced, owing to the important tunnel coupling between neighbour wells of the superlattice, which permits the electron to move in the ring. Additionally, we analysis a superlattice-like structure made of a regular distribution of ionized impurities placed around the QR, a system that may implement the superlattice in a ring idea. Finally, we consider several random disorder models, in order to study roughness disorder and to tackle the robustness of some results against deviations from the ideally nanostructured ring system.

Theoretical investigation of the electronic structure and quantum transport in the graphene–C(111) diamond surface system

International Nuclear Information System (INIS)

Selli, Daniele; Baburin, Igor; Leoni, Stefano; Seifert, Gotthard; Zhu, Zhen; Tománek, David

2013-01-01

We investigate the interaction of a graphene monolayer with the C(111) diamond surface using ab initio density functional theory. To accommodate the lattice mismatch between graphene and diamond, the overlayer deforms into a wavy structure that binds strongly to the diamond substrate. The detached ridges of the wavy graphene overlayer behave electronically as free-standing polyacetylene chains with delocalized π electrons, separated by regions containing only sp 3 carbon atoms covalently bonded to the (111) diamond surface. We performed quantum transport calculations for different geometries of the system to study how the buckling of the graphene layer and the associated bonding to the diamond substrate affect the transport properties. The system displays high carrier mobility along the ridges and a wide transport gap in the direction normal to the ridges. These intriguing, strongly anisotropic transport properties qualify the hybrid graphene–diamond system as a viable candidate for electronic nanodevices. (paper)

Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity states

International Nuclear Information System (INIS)

Tiutiunnyk, A.; Akimov, V.; Tulupenko, V.; Mora-Ramos, M.E.; Kasapoglu, E.; Ungan, F.; Sökmen, I.

2016-01-01

Electronic structure and optical properties in equilateral triangular GaAs/Al_0_._3Ga_0_._7As quantum dots are studied extensively. The effects of donor and acceptor impurity atoms positioned in the orthocenter of the triangle, as well as of the external DC electric field are taken into account. Binding energies of the impurity, exciton energies, interband photoluminescence peak positions as well as linear and non-linear optical properties in THz range caused by transitions between excitonic states are calculated and discussed.

Physics of lateral triple quantum-dot molecules with controlled electron numbers.

Science.gov (United States)

Hsieh, Chang-Yu; Shim, Yun-Pil; Korkusinski, Marek; Hawrylak, Pawel

2012-11-01

We review the recent progress in theory and experiments with lateral triple quantum dots with controlled electron numbers down to one electron in each dot. The theory covers electronic and spin properties as a function of topology, number of electrons, gate voltage and external magnetic field. The orbital Hund's rules and Nagaoka ferromagnetism, magnetic frustration and chirality, interplay of quantum interference and electron-electron interactions and geometrical phases are described and related to charging and transport spectroscopy. Fabrication techniques and recent experiments are covered, as well as potential applications of triple quantum-dot molecule in coherent control, spin manipulation and quantum computation.

Epitaxial graphene electronic structure and transport

International Nuclear Information System (INIS)

De Heer, Walt A; Berger, Claire; Wu Xiaosong; Sprinkle, Mike; Hu Yike; Ruan Ming; First, Phillip N; Stroscio, Joseph A; Haddon, Robert; Piot, Benjamin; Faugeras, Clement; Potemski, Marek; Moon, Jeong-Sun

2010-01-01

Since its inception in 2001, the science and technology of epitaxial graphene on hexagonal silicon carbide has matured into a major international effort and is poised to become the first carbon electronics platform. A historical perspective is presented and the unique electronic properties of single and multilayered epitaxial graphenes on electronics grade silicon carbide are reviewed. Early results on transport and the field effect in Si-face grown graphene monolayers provided proof-of-principle demonstrations. Besides monolayer epitaxial graphene, attention is given to C-face grown multilayer graphene, which consists of electronically decoupled graphene sheets. Production, structure and electronic structure are reviewed. The electronic properties, interrogated using a wide variety of surface, electrical and optical probes, are discussed. An overview is given of recent developments of several device prototypes including resistance standards based on epitaxial graphene quantum Hall devices and new ultrahigh frequency analogue epitaxial graphene amplifiers.

Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy

KAUST Repository

Browne, David A.

2015-05-14

© 2015 AIP Publishing LLC. Unipolar-light emitting diode like structures were grown by NH3 molecular beam epitaxy on c plane (0001) GaN on sapphire templates. Studies were performed to experimentally examine the effect of random alloy fluctuations on electron transport through quantum well active regions. These unipolar structures served as a test vehicle to test our 2D model of the effect of compositional fluctuations on polarization-induced barriers. Variables that were systematically studied included varying quantum well number from 0 to 5, well thickness of 1.5 nm, 3 nm, and 4.5 nm, and well compositions of In0.14Ga0.86N and In0.19Ga0.81N. Diode-like current voltage behavior was clearly observed due to the polarization-induced conduction band barrier in the quantum well region. Increasing quantum well width and number were shown to have a significant impact on increasing the turn-on voltage of each device. Temperature dependent IV measurements clearly revealed the dominant effect of thermionic behavior for temperatures from room temperature and above. Atom probe tomography was used to directly analyze parameters of the alloy fluctuations in the quantum wells including amplitude and length scale of compositional variation. A drift diffusion Schrödinger Poisson method accounting for two dimensional indium fluctuations (both in the growth direction and within the wells) was used to correctly model the turn-on voltages of the devices as compared to traditional 1D simulation models.

Electron-electron interactions in graphene field-induced quantum dots in a high magnetic field

DEFF Research Database (Denmark)

Orlof, A.; Shylau, Artsem; Zozoulenko, I. V.

2015-01-01

We study the effect of electron-electron interaction in graphene quantum dots defined by an external electrostatic potential and a high magnetic field. To account for the electron-electron interaction, we use the Thomas-Fermi approximation and find that electron screening causes the formation...... of compressible strips in the potential profile and the electron density. We numerically solve the Dirac equations describing the electron dynamics in quantum dots, and we demonstrate that compressible strips lead to the appearance of plateaus in the electron energies as a function of the magnetic field. Finally...

Empirical pseudo-potential studies on electronic structure

Indian Academy of Sciences (India)

Theoretical investigations of electronic structure of quantum dots is of current interest in nanophase materials. Empirical theories such as effective mass approximation, tight binding methods and empirical pseudo-potential method are capable of explaining the experimentally observed optical properties. We employ the ...

Subband structure comparison between n- and p- type double delta-doped Ga As quantum wells

International Nuclear Information System (INIS)

Rodriguez V, I.; Gaggero S, L.M.

2004-01-01

We compute the electron level structure (n-type) and the hole subband structure (p-type) of double -doped GaAs (DDD) quantum wells, considering exchange effects. The Thomas-Fermi (TF), and Thomas-Fermi-Dirac (TFD) approximations have been applied in order to describe the bending of the conduction and valence band, respectively. The electron and the hole subband structure study indicates that exchange effects are more important in p-type DDD quantum wells than in n-type DDD Also our results agree with the experimental data available. (Author) 33 refs., 2 tabs., 5 figs

Matrix elements of intraband transitions in quantum dot intermediate band solar cells: the influence of quantum dot presence on the extended-state electron wave-functions

International Nuclear Information System (INIS)

Nozawa, Tomohiro; Arakawa, Yasuhiko

2014-01-01

The intraband transitions which are essential for quantum dot intermediate band solar cells (QD IBSCs) are theoretically investigated by estimating the matrix elements from a ground bound state, which is often regarded as an intermediate band (IB), to conduction band (CB) states for a structure with a quantum dot (QD) embedded in a matrix (a QD/matrix structure). We have found that the QD pushes away the electron envelope functions (probability densities) from the QD region in almost all quantum states above the matrix CB minimum. As a result, the matrix elements of the intraband transitions in the QD/matrix structure are largely reduced, compared to those calculated assuming the envelope functions of free electrons (i.e., plane-wave envelope functions) in a matrix structure as the final states of the intraband transitions. The result indicates the strong influence of the QD itself on the intraband transitions from the IB to the CB states in QD IBSC devices. This work will help in better understanding the problem of the intraband transitions and give new insight, that is, engineering of quantum states is indispensable for the realization of QD IBSCs with high solar energy conversion efficiencies. (paper)

Electronic structure and microscopic model of V2GeO4F2-a quantum spin system with S = 1

International Nuclear Information System (INIS)

Rahaman, Badiur; Saha-Dasgupta, T

2007-01-01

We present first-principles density functional calculations and downfolding studies of the electronic and magnetic properties of the oxide-fluoride quantum spin system V 2 GeO 4 F 2 . We discuss explicitly the nature of the exchange paths and provide quantitative estimates of magnetic exchange couplings. A microscopic modelling based on analysis of the electronic structure of this systems puts it in the interesting class of weakly coupled alternating chain S = 1 systems. Based on the microscopic model, we make inferrences about its spin excitation spectra, which needs to be tested by rigorous experimental study

Artificially Structured Semiconductors to Model Novel Quantum Phenomena

Energy Technology Data Exchange (ETDEWEB)

Pinczuk, Aron [Columbia Univ., New York, NY (United States). Dept. of Applied Physics and Applied Mathematics; Wind, Shalom J. [Columbia Univ., New York, NY (United States). Dept. of Applied Physics and Applied Mathematics

2018-01-13

Award Period: September 1st, 2013 through February 15th, 2017 Submitted to the USDOE Office of Basic Energy Sciences By Aron Pinczuk and Shalom J. Wind Department of Applied Physics and Applied Mathematics Columbia University New York, NY 10027 January 2017 Award # DE-SC0010695 ABSTRACT Research in this project seeks to design, create and study a class of tunable artificial quantum structures in order to extend the range and scope of new and exciting physical phenomena and to explore the potential for new applications. Advanced nanofabrication was used to create an external potential landscape that acts as a lattice of confinement sites for electrons (and/or holes) in a two-dimensional electron gas in a high perfection semiconductor in such a manner that quantum interactions between different sites dictate the significant physics. Our current focus is on ‘artificial graphene’ (AG) in which a set of quantum dots (or sites) are patterned in a honeycomb lattice. The combination of leading edge nanofabrication with ultra-pure semiconductor materials in this project extends the frontier for small period, low-disorder AG systems, enabling the exploration of graphene physics in a semiconductor platform. TECHNICAL DESCRIPTION Contemporary condensed matter science has entered an era of discovery of new low-dimensional materials, such as graphene and other atomically thin materials, that exhibit exciting new physical phenomena that were previously inaccessible. Concurrent with the discovery and development of these new materials are impressive advancements in nanofabrication, which offer an ever-expanding toolbox for creating a myriad of high quality patterns at nanoscale dimensions. This project started about four years ago. Among its major achievements are the realizations of very small period artificial lattices with honeycomb topology in GaAs quantum wells. In our most recent work the periods of the ‘artificial graphene’ (AG) lattices extend down to 40 nm. These

Electronic structure of spin systems

Energy Technology Data Exchange (ETDEWEB)

Saha-Dasgupta, Tanusri

2016-04-15

Highlights: • We review the theoretical modeling of quantum spin systems. • We apply the Nth order muffin-tin orbital electronic structure method. • The method shows the importance of chemistry in the modeling. • CuTe{sub 2}O{sub 5} showed a 2-dimensional coupled spin dimer behavior. • Ti substituted Zn{sub 2}VO(PO{sub 4}){sub 2} showed spin gap behavior. - Abstract: Low-dimensional quantum spin systems, characterized by their unconventional magnetic properties, have attracted much attention. Synthesis of materials appropriate to various classes within these systems has made this field very attractive and a site of many activities. The experimental results like susceptibility data are fitted with the theoretical model to derive the underlying spin Hamiltonian. However, often such a fitting procedure which requires correct guess of the assumed spin Hamiltonian leads to ambiguity in deciding the representative model. In this review article, we will describe how electronic structure calculation within the framework of Nth order muffin-tin orbital (NMTO) based Wannier function technique can be utilized to identify the underlying spin model for a large number of such compounds. We will show examples from compounds belonging to vanadates and cuprates.

Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity states

Energy Technology Data Exchange (ETDEWEB)

Tiutiunnyk, A. [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia); Department of Physics, Donbass State Engineering Academy, Shkadinova 72, 84313 Kramatorsk (Ukraine); Akimov, V. [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia); Department of Physics, Donbass State Engineering Academy, Shkadinova 72, 84313 Kramatorsk (Ukraine); Universidad de Medellín, Carrera 87 No 30-65 Medellín (Colombia); Tulupenko, V. [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia); Department of Physics, Donbass State Engineering Academy, Shkadinova 72, 84313 Kramatorsk (Ukraine); Mora-Ramos, M.E. [Centro de Investigación en Ciencias, Instituto de Investigación en Ciencias Básicas y Aplicadas, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209 Cuernavaca, Morelos (Mexico); Kasapoglu, E. [Cumhuriyet University, Physics Department, 58140 Sivas (Turkey); Ungan, F. [Cumhuriyet University, Faculty of Technology, Deparment of Optical Engineering, 58140 Sivas (Turkey); Sökmen, I. [Department of Physics, Dokuz Eylül University, 35160 Buca, İzmir (Turkey); and others

2016-03-01

Electronic structure and optical properties in equilateral triangular GaAs/Al{sub 0.3}Ga{sub 0.7}As quantum dots are studied extensively. The effects of donor and acceptor impurity atoms positioned in the orthocenter of the triangle, as well as of the external DC electric field are taken into account. Binding energies of the impurity, exciton energies, interband photoluminescence peak positions as well as linear and non-linear optical properties in THz range caused by transitions between excitonic states are calculated and discussed.

Electronic structure and quantum spin fluctuations at the magnetic phase transition in MnSi

Science.gov (United States)

Povzner, A. A.; Volkov, A. G.; Nogovitsyna, T. A.

2018-05-01

The effect of spin fluctuations on the heat capacity and homogeneous magnetic susceptibility of the chiral magnetic MnSi in the vicinity of magnetic transition has been investigated by using the free energy functional of the coupled electron and spin subsystems and taking into account the Dzyaloshinsky-Moriya interaction. For helical ferromagnetic ordering, we found that zero-point fluctuations of the spin density are large and comparable with fluctuations of the non-uniform magnetization. The amplitude of zero-point spin fluctuations shows a sharp decrease in the region of the magnetic phase transition. It is shown that sharp decrease of the amplitude of the quantum spin fluctuations results in the lambda-like maxima of the heat capacity and the homogeneous magnetic susceptibility. Above the temperature of the lambda anomaly, the spin correlation radius becomes less than the period of the helical structure and chiral fluctuations of the local magnetization appear. It is shown that formation of a "shoulder" on the temperature dependence of the heat capacity is due to disappearance of the local magnetization. Our finding allows to explain the experimentally observed features of the magnetic phase transition of MnSi as a result of the crossover of quantum and thermodynamic phase transitions.

Fluorinated graphene films with graphene quantum dots for electronic applications

Energy Technology Data Exchange (ETDEWEB)

Antonova, I. V., E-mail: antonova@isp.nsc.ru [Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Nebogatikova, N. A.; Prinz, V. Ya. [Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, Novosibirsk 630090 (Russian Federation)

2016-06-14

This work analyzes carrier transport, the relaxation of non-equilibrium charge, and the electronic structure of fluorinated graphene (FG) films with graphene quantum dots (GQDs). The FG films with GQDs were fabricated by means of chemical functionalization in an aqueous solution of hydrofluoric acid. High fluctuations of potential relief inside the FG barriers have been detected in the range of up to 200 mV. A phenomenological expression that describes the dependence of the time of non-equilibrium charge emission from GQDs on quantum confinement levels and film thickness (potential barrier parameters between GQDs) is suggested. An increase in the degree of functionalization leads to a decrease in GQD size, the removal of the GQD effect on carrier transport, and the relaxation of non-equilibrium charge. The study of the electronic properties of FG films with GQDs has revealed a unipolar resistive switching effect in the films with a relatively high degree of fluorination and a high current modulation (up to ON/OFF ∼ 10{sup 4}–10{sup 5}) in transistor-like structures with a lower degree of fluorination. 2D films with GQDs are believed to have considerable potential for various electronic applications (nonvolatile memory, 2D connections with optical control and logic elements).

FTL Quantum Models of the Photon and the Electron

International Nuclear Information System (INIS)

Gauthier, Richard F.

2007-01-01

A photon is modeled by an uncharged superluminal quantum moving at 1.414c along an open 45-degree helical trajectory with radius R = λ/2π (where λ is the helical pitch or wavelength). A mostly superluminal spatial model of an electron is composed of a charged pointlike quantum circulating at an extremely high frequency ( 2.5 x 1020 hz) in a closed, double-looped hehcal trajectory whose helical pitch is one Compton wavelength h/mc. The quantum has energy and momentum but not rest mass, so its speed is not limited by c. sThe quantum's speed is superluminal 57% of the time and subluminal 43% of the time, passing through c twice in each trajectory cycle. The quantum's maximum speed in the electron's rest frame is 2.515c and its minimum speed is .707c. The electron model's helical trajectory parameters are selected to produce the electron's spin (ℎ/2π)/2 and approximate (without small QED corrections) magnetic moment e(ℎ/2π)/2m (the Bohr magneton μB) as well as its Dirac equation-related 'jittery motion' angular frequency 2mc2/(ℎ/2π), amplitude (ℎ/2π)/2mc and internal speed c. The two possible helicities of the electron model correspond to the electron and the positron. With these models, an electron is like a closed circulating photon. The electron's inertia is proposed to be related to the electron model's circulating internal Compton momentum mc. The internal superluminalily of the photon model, the internal superluminahty/subluminality of the electron model, and the proposed approach to the electron's inertia as ''momentum at rest'' within the electron, could be relevant to possible mechanisms of superluminal communication and transportation

Electronic states in a quantum lens

International Nuclear Information System (INIS)

Rodriguez, Arezky H.; Trallero-Giner, C.; Ulloa, S. E.; Marin-Antuna, J.

2001-01-01

We present a model to find analytically the electronic states in self-assembled quantum dots with a truncated spherical cap (''lens'') geometry. A conformal analytical image is designed to map the quantum dot boundary into a dot with semispherical shape. The Hamiltonian for a carrier confined in the quantum lens is correspondingly mapped into an equivalent operator and its eigenvalues and eigenfunctions for the corresponding Dirichlet problem are analyzed. A modified Rayleigh-Schro''dinger perturbation theory is presented to obtain analytical expressions for the energy levels and wave functions as a function of the spherical cap height b and radius a of the circular cross section. Calculations for a hard wall confinement potential are presented, and the effect of decreasing symmetry on the energy values and eigenfunctions of the lens-shape quantum dot is studied. As the degeneracies of a semicircular geometry are broken for b≠a, our perturbation approach allows tracking of the split states. Energy states and electronic wave functions with m=0 present the most pronounced influence on the reduction of the lens height. The method and expressions presented here can be straightforwardly extended to deal with more general Hamiltonians, including strains and valence-band coupling effects in Group III--V and Group II--VI self-assembled quantum dots

Electron quantum optics in ballistic chiral conductors

Energy Technology Data Exchange (ETDEWEB)

Bocquillon, Erwann; Freulon, Vincent; Parmentier, Francois D.; Berroir, Jean-Marc; Placais, Bernard; Feve, Gwendal [Laboratoire Pierre Aigrain, Ecole Normale Superieure, CNRS (UMR 8551), Universite Pierre et Marie Curie, Universite Paris Diderot, Paris (France); Wahl, Claire; Rech, Jerome; Jonckheere, Thibaut; Martin, Thierry [Aix Marseille Universite, CNRS, CPT, UMR 7332, Marseille (France); Universite de Toulon, CNRS, CPT, UMR 7332, La Garde (France); Grenier, Charles; Ferraro, Dario; Degiovanni, Pascal [Universite de Lyon, Federation de Physique Andre Marie Ampere, CNRS - Laboratoire de Physique de l' Ecole Normale Superieure de Lyon, Lyon (France)

2014-01-15

The edge channels of the quantum Hall effect provide one dimensional chiral and ballistic wires along which electrons can be guided in an optics-like setup. Electronic propagation can then be analyzed using concepts and tools derived from optics. After a brief review of electron optics experiments performed using stationary current sources which continuously emit electrons in the conductor, this paper focuses on triggered sources, which can generate on-demand a single particle state. It first outlines the electron optics formalism and its analogies and differences with photon optics and then turns to the presentation of single electron emitters and their characterization through the measurements of the average electrical current and its correlations. This is followed by a discussion of electron quantum optics experiments in the Hanbury-Brown and Twiss geometry where two-particle interferences occur. Finally, Coulomb interactions effects and their influence on single electron states are considered. (copyright 2013 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Electron quantum optics in ballistic chiral conductors

International Nuclear Information System (INIS)

Bocquillon, Erwann; Freulon, Vincent; Parmentier, Francois D.; Berroir, Jean-Marc; Placais, Bernard; Feve, Gwendal; Wahl, Claire; Rech, Jerome; Jonckheere, Thibaut; Martin, Thierry; Grenier, Charles; Ferraro, Dario; Degiovanni, Pascal

2014-01-01

The edge channels of the quantum Hall effect provide one dimensional chiral and ballistic wires along which electrons can be guided in an optics-like setup. Electronic propagation can then be analyzed using concepts and tools derived from optics. After a brief review of electron optics experiments performed using stationary current sources which continuously emit electrons in the conductor, this paper focuses on triggered sources, which can generate on-demand a single particle state. It first outlines the electron optics formalism and its analogies and differences with photon optics and then turns to the presentation of single electron emitters and their characterization through the measurements of the average electrical current and its correlations. This is followed by a discussion of electron quantum optics experiments in the Hanbury-Brown and Twiss geometry where two-particle interferences occur. Finally, Coulomb interactions effects and their influence on single electron states are considered. (copyright 2013 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Renormalization of effective mass in self-assembled quantum dots due to electron-electron interactions

International Nuclear Information System (INIS)

Babinski, A; Korkusinski, M; Hawrylak, P; Wasilewski, Z R; Potemski, M

2013-01-01

Magnetic-field dispersion of the multiexcitons related to the p shell of a single quantum dot (QD) is analysed in this work. The reduced cyclotron effective mass of carriers is determined from the energy splitting between the p + - and p − - related multiexcitonic emission lines. The reduced mass in the occupied QD was found to be larger than the mass related to the QD's single particle structure. The apparent increase of the reduced mass with increasing excitonic occupation of the dot is related to the mass renoralization due to electron-electron interactions within a multiexcitonic droplet

Physics of lateral triple quantum-dot molecules with controlled electron numbers

International Nuclear Information System (INIS)

Hsieh, Chang-Yu; Shim, Yun-Pil; Korkusinski, Marek; Hawrylak, Pawel

2012-01-01

We review the recent progress in theory and experiments with lateral triple quantum dots with controlled electron numbers down to one electron in each dot. The theory covers electronic and spin properties as a function of topology, number of electrons, gate voltage and external magnetic field. The orbital Hund's rules and Nagaoka ferromagnetism, magnetic frustration and chirality, interplay of quantum interference and electron–electron interactions and geometrical phases are described and related to charging and transport spectroscopy. Fabrication techniques and recent experiments are covered, as well as potential applications of triple quantum-dot molecule in coherent control, spin manipulation and quantum computation. (review article)

From structure to spectra. Tight-binding theory of InGaAs quantum dots

International Nuclear Information System (INIS)

Goldmann, Elias

2014-01-01

Self-assembled semiconductor quantum dots have raised considerable interest in the last decades due to a multitude of possible applications ranging from carrier storage to light emitters, lasers and future quantum communication devices. Quantum dots offer unique electronic and photonic properties due to the three-dimensional confinement of charge carriers and the coupling to a quasi-continuum of wetting layer and barrier states. In this work we investigate the electronic structure of In x Ga 1-x As quantum dots embedded in GaAs, considering realistic quantum dot geometries and Indium concentrations. We utilize a next-neighbour sp 3 s * tight-binding model for the calculation of electronic single-particle energies and wave functions bound in the nanostructure and account for strain arising from lattice mismatch of the constituent materials atomistically. With the calculated single-particle wave functions we derive Coulomb matrix elements and include them into a configuration interaction treatment, yielding many-particle states and energies of the interacting many-carrier system. Also from the tight-binding single-particle wave functions we derive dipole transition strengths to obtain optical quantum dot emission and absorption spectra with Fermi's golden rule. Excitonic fine-structure splittings are obtained, which play an important role for future quantum cryptography and quantum communication devices for entanglement swapping or quantum repeating. For light emission suited for long-range quantum-crypted fiber communication InAs quantum dots are embedded in an In x Ga 1-x As strain-reducing layer, shifting the emission wavelength into telecom low-absorption windows. We investigate the influence of the strain-reducing layer Indium concentration on the excitonic finestructure splitting. The fine-structure splitting is found to saturate and, in some cases, even reduce with strain-reducing layer Indium concentration, a result being counterintuitively. Our result

From structure to spectra. Tight-binding theory of InGaAs quantum dots

Energy Technology Data Exchange (ETDEWEB)

Goldmann, Elias

2014-07-23

Self-assembled semiconductor quantum dots have raised considerable interest in the last decades due to a multitude of possible applications ranging from carrier storage to light emitters, lasers and future quantum communication devices. Quantum dots offer unique electronic and photonic properties due to the three-dimensional confinement of charge carriers and the coupling to a quasi-continuum of wetting layer and barrier states. In this work we investigate the electronic structure of In{sub x}Ga{sub 1-x}As quantum dots embedded in GaAs, considering realistic quantum dot geometries and Indium concentrations. We utilize a next-neighbour sp{sup 3}s{sup *} tight-binding model for the calculation of electronic single-particle energies and wave functions bound in the nanostructure and account for strain arising from lattice mismatch of the constituent materials atomistically. With the calculated single-particle wave functions we derive Coulomb matrix elements and include them into a configuration interaction treatment, yielding many-particle states and energies of the interacting many-carrier system. Also from the tight-binding single-particle wave functions we derive dipole transition strengths to obtain optical quantum dot emission and absorption spectra with Fermi's golden rule. Excitonic fine-structure splittings are obtained, which play an important role for future quantum cryptography and quantum communication devices for entanglement swapping or quantum repeating. For light emission suited for long-range quantum-crypted fiber communication InAs quantum dots are embedded in an In{sub x}Ga{sub 1-x}As strain-reducing layer, shifting the emission wavelength into telecom low-absorption windows. We investigate the influence of the strain-reducing layer Indium concentration on the excitonic finestructure splitting. The fine-structure splitting is found to saturate and, in some cases, even reduce with strain-reducing layer Indium concentration, a result being

Superconducting quantum electronics

International Nuclear Information System (INIS)

Kose, V.

1989-01-01

This book reviews recent accomplishments, presents new results and discusses possible future developments of superconducting quantum electronics and high T c superconductivity. The three main parts of the book deal with fundamentals, sensitive detectors, and precision metrology. New results reported include: correct equivalent circuits modelling superconducting electronic devices; exact solution of the Mattis-Bardeen equations describing various experiments for thin films; complete theoretical description and experimental results for a new broad band spectrum analyzer; a new Josephson junction potentiometer allowing tracing of unknown voltage ratios back to well-known frequency ratios; and fast superconducting SQUID shift registers enabling the production of calculable noise power spectra in the microwave region

Spin polarization of electrons in quantum wires

OpenAIRE

Vasilchenko, A. A.

2013-01-01

The total energy of a quasi-one-dimensional electron system is calculated using density functional theory. It is shown that spontaneous ferromagnetic state in quantum wire occurs at low one-dimensional electron density. The critical electron density below which electrons are in spin-polarized state is estimated analytically.

Spin relaxation in quantum dots due to electron exchange with leads.

Science.gov (United States)

Vorontsov, A B; Vavilov, M G

2008-11-28

We calculate spin relaxation rates in lateral quantum dot systems due to electron exchange between dots and leads. Using rate equations, we develop a theoretical description of the experimentally observed electric current in the spin blockade regime of double quantum dots. A single expression fits the entire current profile and describes the structure of both the conduction peaks and the suppressed ("valley") region. Extrinsic rates calculated here have to be taken into account for accurate extraction of intrinsic relaxation rates due to the spin-orbit and hyperfine spin scattering mechanisms from spin blockade measurements.

Effect of structural disorder on quantum oscillations in graphite

Energy Technology Data Exchange (ETDEWEB)

Camargo, B. C., E-mail: b.c-camargo@yahoo.com.br; Kopelevich, Y. [Instituto de Fisica Gleb Wataghin, Universidade Estadual de Campinas, Unicamp 13083-970, Campinas, São Paulo (Brazil); Usher, A.; Hubbard, S. B. [School of Physics, University of Exeter, Stocker Road, Exeter EX4 4QL (United Kingdom)

2016-01-18

We have studied the effect of structural disorder on the de Haas van Alphen and Shubnikov de Haas quantum oscillations measured in natural, Kish, and highly oriented pyrolytic graphite samples at temperatures down to 30 mK and at magnetic fields up to 14 T. The measurements were performed on different samples characterized by means of x-ray diffractometry, transmission electron microscopy, and atomic-force microscopy techniques. Our results reveal a correlation between the amplitude of quantum oscillations and the sample surface roughness.

Quantum electronics for atomic physics and telecommunication

CERN Document Server

Nagourney, Warren G

2014-01-01

Nagourney provides a course in quantum electronics for researchers in atomic physics and other related areas (including telecommunications). The book covers the usual topics, such as Gaussian beams, optical cavities, lasers, non-linear optics, modulation techniques and fibre optics, but also includes a number of areas not usually found in a textbook on quantum electronics, such as the enhancement of non-linear processes in a build-up cavity or periodically poled waveguide, impedance matching into a cavity and astigmatism in ring cavities.

Determination of equilibrium structures of bromothymol blue revealed by using quantum chemistry with an aid of multivariate analysis of electronic absorption spectra

Science.gov (United States)

Shimada, Toru; Hasegawa, Takeshi

2017-10-01

The pH dependent chemical structures of bromothymol blue (BTB), which have long been under controversy, are determined by employing a combined technique of multivariate analysis of electronic absorption spectra and quantum chemistry. Principle component analysis (PCA) of the pH dependent spectra apparently reveals that only two chemical species are adequate to fully account for the color changes, with which the spectral decomposition is readily performed by using augmented alternative least-squares (ALS) regression analysis. The quantity variation by the ALS analysis also reveals the practical acid dissociation constant, pKa‧. The determination of pKa‧ is performed for various ionic strengths, which reveals the thermodynamic acid constant (pKa = 7.5) and the number of charge on each chemical species; the yellow form is negatively charged species of - 1 and the blue form that of - 2. On this chemical information, the quantum chemical calculation is carried out to find that BTB molecules take the pure quinoid form in an acid solution and the quinoid-phenolate form in an alkaline solution. The time-dependent density functional theory (TD-DFT) calculations for the theoretically determined chemical structures account for the peak shift of the electronic spectra. In this manner, the structures of all the chemical species appeared in equilibrium have finally been confirmed.

Dimension-dependent stimulated radiative interaction of a single electron quantum wavepacket

Science.gov (United States)

Gover, Avraham; Pan, Yiming

2018-06-01

In the foundation of quantum mechanics, the spatial dimensions of electron wavepacket are understood only in terms of an expectation value - the probability distribution of the particle location. One can still inquire how the quantum electron wavepacket size affects a physical process. Here we address the fundamental physics problem of particle-wave duality and the measurability of a free electron quantum wavepacket. Our analysis of stimulated radiative interaction of an electron wavepacket, accompanied by numerical computations, reveals two limits. In the quantum regime of long wavepacket size relative to radiation wavelength, one obtains only quantum-recoil multiphoton sidebands in the electron energy spectrum. In the opposite regime, the wavepacket interaction approaches the limit of classical point-particle acceleration. The wavepacket features can be revealed in experiments carried out in the intermediate regime of wavepacket size commensurate with the radiation wavelength.

The Quantum World Unveiled by Electron Waves

International Nuclear Information System (INIS)

Akira Tonomura

1998-08-01

This book emphasizes the experimental aspects of the author's own laboratory. Instead of merely presenting a dry collection of knowledge, the author unfolds to the readers his vivid experiences of enthusiasm, sheer pleasure, and yet frustrations in the course of his own research. In this way, the book aims to arouse the reader's curiosity in the strange behaviors of electrons in the microscopic world, which differ significantly from our common sense and daily experiences of the macroscopic world. The fields of physics explored in the book are quantum mechanics, superconductivity, electron microscopy, holography, magnetism, and unified theory - areas of the author's study using electron waves. A world-renowned expert in electron holography, the author promises the interested reader a fascinating ride through the quantum world of electron waves, accompanied by many colorful illustrations that delight the senses and captivate the imagination

Quantum algebraic representation of localization and motion of a Dirac electron

International Nuclear Information System (INIS)

Jaekel, Marc-Thierry; Reynaud, Serge

2001-01-01

Quantum algebraic observables representing localization in space-time of a Dirac electron are defined. Inertial motion of the electron is represented in the quantum algebra with electron mass acting as the generator of motion. Since transformations to uniformly accelerated frames are naturally included in this conformally invariant description, the quantum algebra is also able to deal with uniformly accelerated motion

Inhomogeneous effects in the quantum free electron laser

International Nuclear Information System (INIS)

Piovella, N.; Bonifacio, R.

2006-01-01

We include inhomogeneous effects in the quantum model of a free electron laser taking into account the initial energy spread of the electron beam. From a linear analysis, we obtain a generalized dispersion relation, from which the exponential gain can be explicitly calculated. We determine the maximum allowed initial energy spread in the quantum exponential regime and we discuss the limit of large energy spread

The Quasi-Electron Shell Structure of the Fractional Quantum Hall Effect

Science.gov (United States)

Haxton, Wick; Haxton, Daniel

2015-04-01

The fractional quantum Hall effect (FQHE) formulated on a sphere resembles the nuclear shell model, with the desired translationally invariant states having total angular momentum zero. This property was exploited by Ginocchio and Haxton (GH) to derive a new set of scalar operators and a first-Landau-level representation of the full set of hierarchy states (fillings 1/3, 2/5, 3/7, etc.), with overlaps identical to those of Jain, who used unphysical higher Landau levels excitations followed by numerical projection. We demonstrate that the GH operators produce an appealing description of the FQHE as shells filled by non-interacting quasi-electrons, or composite fermions. These are explicitly constructed, and their planar forms are also found. The evolution of the shells and their quasi-electrons is quite unusual. The connections with electron correlations and Laughlin's variational arguments are described. We discuss how ``new states'' found experimentally at fillings such as 4/11 and 5/13 fit into this scheme. Work support in part by the US DOE Offices of Nuclear Physics and Basic Energy Sciences.

Quantum State Transfer from a Single Photon to a Distant Quantum-Dot Electron Spin

Science.gov (United States)

He, Yu; He, Yu-Ming; Wei, Yu-Jia; Jiang, Xiao; Chen, Kai; Lu, Chao-Yang; Pan, Jian-Wei; Schneider, Christian; Kamp, Martin; Höfling, Sven

2017-08-01

Quantum state transfer from flying photons to stationary matter qubits is an important element in the realization of quantum networks. Self-assembled semiconductor quantum dots provide a promising solid-state platform hosting both single photon and spin, with an inherent light-matter interface. Here, we develop a method to coherently and actively control the single-photon frequency bins in superposition using electro-optic modulators, and measure the spin-photon entanglement with a fidelity of 0.796 ±0.020 . Further, by Greenberger-Horne-Zeilinger-type state projection on the frequency, path, and polarization degrees of freedom of a single photon, we demonstrate quantum state transfer from a single photon to a single electron spin confined in an InGaAs quantum dot, separated by 5 m. The quantum state mapping from the photon's polarization to the electron's spin is demonstrated along three different axes on the Bloch sphere, with an average fidelity of 78.5%.

Statistical Exploration of Electronic Structure of Molecules from Quantum Monte-Carlo Simulations

Energy Technology Data Exchange (ETDEWEB)

Prabhat, Mr; Zubarev, Dmitry; Lester, Jr., William A.

2010-12-22

In this report, we present results from analysis of Quantum Monte Carlo (QMC) simulation data with the goal of determining internal structure of a 3N-dimensional phase space of an N-electron molecule. We are interested in mining the simulation data for patterns that might be indicative of the bond rearrangement as molecules change electronic states. We examined simulation output that tracks the positions of two coupled electrons in the singlet and triplet states of an H2 molecule. The electrons trace out a trajectory, which was analyzed with a number of statistical techniques. This project was intended to address the following scientific questions: (1) Do high-dimensional phase spaces characterizing electronic structure of molecules tend to cluster in any natural way? Do we see a change in clustering patterns as we explore different electronic states of the same molecule? (2) Since it is hard to understand the high-dimensional space of trajectories, can we project these trajectories to a lower dimensional subspace to gain a better understanding of patterns? (3) Do trajectories inherently lie in a lower-dimensional manifold? Can we recover that manifold? After extensive statistical analysis, we are now in a better position to respond to these questions. (1) We definitely see clustering patterns, and differences between the H2 and H2tri datasets. These are revealed by the pamk method in a fairly reliable manner and can potentially be used to distinguish bonded and non-bonded systems and get insight into the nature of bonding. (2) Projecting to a lower dimensional subspace ({approx}4-5) using PCA or Kernel PCA reveals interesting patterns in the distribution of scalar values, which can be related to the existing descriptors of electronic structure of molecules. Also, these results can be immediately used to develop robust tools for analysis of noisy data obtained during QMC simulations (3) All dimensionality reduction and estimation techniques that we tried seem to

Formulation of a Mesoscopic Electron Beam Splitter with Application in Semiconductor Based Quantum Computing

OpenAIRE

Shanker, A.; Bhowmik, D.; Bhattacharya, T. K.

2010-01-01

We aim to analytically arrive at a beam splitter formulation for electron waves. The electron beam splitter is an essential component of quantum logical devices. To arrive at the beam splitter structure, the electrons are treated as waves, i.e. we assume the transport to be ballistic. Ballistic electrons are electrons that travel over such short distances that their phase coherence is maintained. For mesoscopic devices with size smaller than the mean free path, the phase relaxation length and...

Influence of scattering processes on electron quantum states in nanowires

Directory of Open Access Journals (Sweden)

Pozdnyakov Dmitry

2007-01-01

Full Text Available AbstractIn the framework of quantum perturbation theory the self-consistent method of calculation of electron scattering rates in nanowires with the one-dimensional electron gas in the quantum limit is worked out. The developed method allows both the collisional broadening and the quantum correlations between scattering events to be taken into account. It is an alternativeper seto the Fock approximation for the self-energy approach based on Green’s function formalism. However this approach is free of mathematical difficulties typical to the Fock approximation. Moreover, the developed method is simpler than the Fock approximation from the computational point of view. Using the approximation of stable one-particle quantum states it is proved that the electron scattering processes determine the dependence of electron energy versus its wave vector.

Giant electron-hole transport asymmetry in ultra-short quantum transistors

Science.gov (United States)

McRae, A. C.; Tayari, V.; Porter, J. M.; Champagne, A. R.

2017-01-01

Making use of bipolar transport in single-wall carbon nanotube quantum transistors would permit a single device to operate as both a quantum dot and a ballistic conductor or as two quantum dots with different charging energies. Here we report ultra-clean 10 to 100 nm scale suspended nanotube transistors with a large electron-hole transport asymmetry. The devices consist of naked nanotube channels contacted with sections of tube under annealed gold. The annealed gold acts as an n-doping top gate, allowing coherent quantum transport, and can create nanometre-sharp barriers. These tunnel barriers define a single quantum dot whose charging energies to add an electron or a hole are vastly different (e−h charging energy asymmetry). We parameterize the e−h transport asymmetry by the ratio of the hole and electron charging energies ηe−h. This asymmetry is maximized for short channels and small band gap tubes. In a small band gap device, we demonstrate the fabrication of a dual functionality quantum device acting as a quantum dot for holes and a much longer quantum bus for electrons. In a 14 nm-long channel, ηe−h reaches up to 2.6 for a device with a band gap of 270 meV. The charging energies in this device exceed 100 meV. PMID:28561024

Structure of conduction electrons on polysilanes

Energy Technology Data Exchange (ETDEWEB)

Ichikawa, Tsuneki [Hokkaido Univ., Sapporo (Japan); Kumagai, Jun

1998-10-01

The orbital structures of conduction electrons on permethylated oligosilane, Si{sub 2n}(CH{sub 3}){sub 2n+2}(n = 2 - 8), and poly(cyclohexylmethylsilane) have been determined by the electron spin-echo envelope modulation signals of the radical anions of these silanes in a deuterated rigid matrix at 77 K. The conduction electron on permethylated oligosilane is delocalized over the entire main chain, whereas that on poly(cyclohexylmethylsilane) is localized on a part of the main chain composed of about six Si atoms. Quantum-chemical calculations suggest that Anderson localization due to fluctuation of {sigma} conjugation by conformational disorder of the main chain is responsible for the localization of both the conduction electron and the hole. (author)

Quantum Hall Electron Nematics

Science.gov (United States)

MacDonald, Allan

In 2D electron systems hosted by crystals with hexagonal symmetry, electron nematic phases with spontaneously broken C3 symmetry are expected to occur in the quantum Hall regime when triplets of Landau levels associated with three different Fermi surface pockets are partially filled. The broken symmetry state is driven by intravalley Coulombic exchange interactions that favor spontaneously polarized valley occupations. I will discuss three different examples of 2D electron systems in which this type of broken symmetry state is expected to occur: i) the SnTe (111) surface, ii) the Bi (111) surface. and iii) unbalanced bilayer graphene. This type of quantum Hall electron nematic state has so far been confirmed only in the Bi (111) case, in which the anisotropic quasiparticle wavefunctions of the broken symmetry state were directly imaged. In the SnTe case the nematic state phase boundary is controlled by a competition between intravalley Coulomb interactions and intervalley scattering processes that increase in relative strength with magnetic field. An in-plane Zeeman field alters the phase diagram by lifting the three-fold Landau level degeneracy, yielding a ground state energy with 2 π/3 periodicity as a function of Zeeman-field orientation angle. I will comment on the possibility of observing similar states in the absence of a magnetic field. Supported by DOE Division of Materials Sciences and Engineering Grant DE-FG03-02ER45958.

Complex dynamics in planar two-electron quantum dots

International Nuclear Information System (INIS)

Schroeter, Sebastian Josef Arthur

2013-01-01

Quantum dots play an important role in a wide range of recent experimental and technological developments. In particular they are promising candidates for realisations of quantum bits and further applications in quantum information theory. The harmonically confined Hooke's atom model is experimentally verified and separates in centre-of-mass and relative coordinates. Findings that are contradictory to this separability call for an extension of the model, in particular changing the confinement potential. In order to study effects of an anharmonic confinement potential on spectral properties of planar two-electron quantum dots a sophisticated numerical approach is developed. Comparison between the Helium atom, Hooke's atom and an anharmonic potential model are undertaken in order to improve the description of quantum dots. Classical and quantum features of complexity and chaos are investigated and used to characterise the dynamics of the system to be mixed regular-chaotic. Influence of decoherence can be described by quantum fidelity, which measures the effect of a perturbation on the time evolution. The quantum fidelity of eigenstates of the system depends strongly on the properties of the perturbation. Several methods for solving the time-dependent Schrödinger equation are implemented and a high level of accuracy for long time evolutions is achieved. The concept of offset entanglement, the entanglement of harmonic models in the noninteracting limit, is introduced. This concept explains different questions raised in the literature for harmonic quantum dot models, recently. It shows that only in the groundstate the electrons are not entangled in the fermionic sense. The applicability, validity, and origin of Hund's first rule in general quantum dot models is further addressed. In fact Hund's first rule is only applicable, and in this case also valid, for one pair of singlet and triplet states in Hooke's atom. For more realistic models of two-electron quantum dots an

The electronic structure of VO in its ground and electronically excited states: A combined matrix isolation and quantum chemical (MRCI) study

International Nuclear Information System (INIS)

Hübner, Olaf; Hornung, Julius; Himmel, Hans-Jörg

2015-01-01

The electronic ground and excited states of the vanadium monoxide (VO) molecule were studied in detail. Electronic absorption spectra for the molecule isolated in Ne matrices complement the previous gas-phase spectra. A thorough quantum chemical (multi-reference configuration interaction) study essentially confirms the assignment and characterization of the electronic excitations observed for VO in the gas-phase and in Ne matrices and allows the clarification of open issues. It provides a complete overview over the electronically excited states up to about 3 eV of this archetypical compound

Optical spectroscopy of GaAs in the extreme quantum limit: Integer and fractional quantum Hall effect, and onset of the electron solid

Energy Technology Data Exchange (ETDEWEB)

Clark, R.G.; Ford, R.A.; Haynes, S.R.; Ryan, J.F.; Turberfield, A.J.; Wright, P.A. (Clarendon Lab., Univ. of Oxford (UK)); Williams, F.I.B.; Deville, G.; Glattli, D.C. (CEN de Saclay, 91 - Gif-sur-Yvette (France)); Mallett, J.R.; Oswald, P.M.W. (Clarendon Lab., Univ. of Oxford (UK) Katholieke Univ. Leuven (Belgium)); Burgt, M. van der; Herlach, F. (Katholieke Univ. Leuven (Belgium)); Foxon, C.T.; Harris, J.J. (Philips Research Labs., Redhill (UK))

1991-02-01

Our recent optical detection of the integer and fractional quantum Hall effects in GaAs, by intrinsic band-gap photoluminescence at dilution refrigerator temperatures, is reviewed. This work has been extended to the extreme quantum limit where a photoluminescence peak develops close to Landau level filling factor {nu}=1/5 which correlates both with the onset of threshold behaviour in current-voltage characteristics of the two-dimensional electron system and a resonant radio-frequency absorption; the latter are quantitatively accounted for by a model of crystalline electronic structure broken up into domains. Preliminary mK transport experiments in intense, pulsed magnetic fields are also described, which establish a basis to access the electron solid phase transition in a hitherto unattainable region of the (B,T) plane. (orig.).

Thiobenzamide: Structure of a free molecule as studied by gas electron diffraction and quantum chemical calculations

Science.gov (United States)

Kolesnikova, Inna N.; Putkov, Andrei E.; Rykov, Anatolii N.; Shishkov, Igor F.

2018-06-01

The equilibrium (re) molecular structure of thiobenzamide along with rh1 structure has been determined in gas phase using gas electron-diffraction (GED) at about 127 °C and quantum-chemical calculations (QC). Rovibrational distance corrections to the thermal averaged GED structure have been computed with anharmonic force constants obtained at the MP2/cc-pVTZ level of theory. According to the results of GED and QC thiobenzamide exists as mixture of two non-planar enantiomers of C1 symmetry. The selected equilibrium geometrical parameters of thiobenzamide (re, Å and ∠e, deg) are the following: (Cdbnd S) = 1.641(4), (Csbnd N) = 1.352(2), (Csbnd C) = 1.478(9), (Cdbnd C)av = 1.395(2), CCN = 114.7(5), CCS = 123.4(5), C2C1C7S = 31(4), C6C1C7N = 29(4). The structure of thiobenzamide in the gas phase is markedly different to that in the literature for the single crystal. The differences between the gas and the solid structures are ascribed to the presence of intermolecular hydrogen bonding in the solid phase.

Quantum lifetime in electron storage rings

International Nuclear Information System (INIS)

Chao, A.W.

1977-02-01

One of the mechanisms which contribute to beam lifetime in electron storage rings is the quantum emission of energetic photons causing particles to be lost from the rf bucket. This quantum lifetime is among other things important in defining the required aperture in a storage ring. An approximate expression of quantum lifetime, predicted by a one-dimensional model which takes into account only the betatron motion, has been used in most storage ring designs. If the beam is aperture-limited at a position with nonzero dispersion, both the betatron and synchrotron motions have to be included and a two-dimensional model must be used. An exact expression of quantum lifetime for the one-dimensional case and an approximate expression for the two-dimensional case are given

Quantum lifetime in electron storage rings

International Nuclear Information System (INIS)

Chao, A.W.

1977-01-01

One of the mechanisms which contributes to beam lifetime in electron storage rings is the quantum emission of energetic photons causing particles to be lost from the rf bucket. This quantum lifetime is among other things important in defining the required aperture in a storage ring. An approximate expression of quantum lifetime, predicted by a one-dimensional model which takes into account only the betatron motion, has been used in most storage ring designs. If the beam is aperture-limited at a position with nonzero dispersion, both the betatron and synchrotron motions have to be included, and a two-dimensional model must be used. An exact expression of quantum lifetime for the one-dimensional case and an approximate expression for the two-dimensional case are given

Comparative study of donor-induced quantum dots in Si nano-channels by single-electron transport characterization and Kelvin probe force microscopy

International Nuclear Information System (INIS)

Tyszka, K.; Moraru, D.; Samanta, A.; Mizuno, T.; Tabe, M.; Jabłoński, R.

2015-01-01

We comparatively study donor-induced quantum dots in Si nanoscale-channel transistors for a wide range of doping concentration by analysis of single-electron tunneling transport and surface potential measured by Kelvin probe force microscopy (KPFM). By correlating KPFM observations of donor-induced potential landscapes with simulations based on Thomas-Fermi approximation, it is demonstrated that single-electron tunneling transport at lowest gate voltages (for smallest coverage of screening electrons) is governed most frequently by only one dominant quantum dot, regardless of doping concentration. Doping concentration, however, primarily affects the internal structure of the quantum dot. At low concentrations, individual donors form most of the quantum dots, i.e., “donor-atom” quantum dots. In contrast, at high concentrations above metal-insulator transition, closely placed donors instead of individual donors form more complex quantum dots, i.e., “donor-cluster” quantum dots. The potential depth of these “donor-cluster” quantum dots is significantly reduced by increasing gate voltage (increasing coverage of screening electrons), leading to the occurrence of multiple competing quantum dots

Coupled electron-phonon transport from molecular dynamics with quantum baths

DEFF Research Database (Denmark)

Lu, Jing Tao; Wang, J. S.

2009-01-01

Based on generalized quantum Langevin equations for the tight-binding wavefunction amplitudes and lattice displacements, electron and phonon quantum transport are obtained exactly using molecular dynamics (MD) in the ballistic regime. The electron-phonon interactions can be handled with a quasi...

Electron quantum interferences and universal conductance fluctuations

International Nuclear Information System (INIS)

Benoit, A.; Pichard, J.L.

1988-05-01

Quantum interferences yield corrections to the classical ohmic behaviour predicted by Boltzmann theory in electronic transport: for instance the well-known ''weak localization'' effects. Furthermore, very recently, quantum interference effects have been proved to be responsible for statistically different phenomena, associated with Universal Conductance Fluctuations and observed on very small devices [fr

Electronic excitation induced structural and optical modifications in InGaN/GaN quantum well structures grown by MOCVD

Energy Technology Data Exchange (ETDEWEB)

Prabakaran, K.; Ramesh, R.; Jayasakthi, M.; Surender, S.; Pradeep, S. [Crystal Growth Centre, Anna University, Chennai (India); Balaji, M. [National Centre for Nanoscience and Nanotechnology, University of Madras, Guindy Campus, Chennai (India); Asokan, K. [Inter-University Accelerator Centre, New Delhi (India); Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai (India); Manonmaniam Sundaranar University, Tirunelveli (India)

2017-03-01

Highlights: • Effects on InGaN/GaN QW structures by Au{sup 7+} (100 MeV) ion have been investigated. • Structural defects of the irradiated InGaN/GaN QW structures are determined. • The intermixing effect in irradiated InGaN/GaN QW structures were understood. • Modified luminescence was observed in the PL spectra due to heavy ion irradiation. • Surface modification was observed due to the heavy ion irradiation. - Abstract: The present study focuses on the electronic excitation induced structural and optical properties of InGaN/GaN quantum well (QW) structures grown by metal organic chemical vapor deposition technique. These excitations were produced using Au{sup 7+} ion irradiation with 100 MeV energy. The X-ray rocking curves intensity and full width at half-maximum values corresponding to the planes of (0 0 0 2) and (1 0 −1 5) of the irradiated QW structures show the modifications in the screw and edge-type dislocation densities vary with the ion fluences. The structural characteristics using the reciprocal space mapping indicate the intermixing effects in InGaN/GaN QW structures. Atomic force microscopy images confirmed the presence of nanostructures and the surface modification due to heavy ion irradiation. The irradiated QW structures exhibited degraded photoluminescence intensity and a subsequent decrease in the yellow luminescence band intensity with the fluences of 1 × 10{sup 11} and 5 × 10{sup 12} ions/cm{sup 2} compared to the pristine QW structures.

Electronic transient processes and optical spectra in quantum dots for quantum computing

Czech Academy of Sciences Publication Activity Database

Král, Karel; Zdeněk, Petr; Khás, Zdeněk

2004-01-01

Roč. 3, č. 1 (2004), s. 17-25 ISSN 1536-125X R&D Projects: GA AV ČR IAA1010113 Institutional research plan: CEZ:AV0Z1010914 Keywords : depopulation * electronic relaxation * optical spectra * quantum dots * self-assembled quantum dots * upconversion Subject RIV: BE - Theoretical Physics Impact factor: 3.176, year: 2004

Single-shot quantum nondemolition measurement of a quantum-dot electron spin using cavity exciton-polaritons

Science.gov (United States)

Puri, Shruti; McMahon, Peter L.; Yamamoto, Yoshihisa

2014-10-01

We propose a scheme to perform single-shot quantum nondemolition (QND) readout of the spin of an electron trapped in a semiconductor quantum dot (QD). Our proposal relies on the interaction of the QD electron spin with optically excited, quantum well (QW) microcavity exciton-polaritons. The spin-dependent Coulomb exchange interaction between the QD electron and cavity polaritons causes the phase and intensity response of left circularly polarized light to be different than that of right circularly polarized light, in such a way that the QD electron's spin can be inferred from the response to a linearly polarized probe reflected or transmitted from the cavity. We show that with careful device design it is possible to essentially eliminate spin-flip Raman transitions. Thus a QND measurement of the QD electron spin can be performed within a few tens of nanoseconds with fidelity ˜99.95%. This improves upon current optical QD spin readout techniques across multiple metrics, including speed and scalability.

Determination of equilibrium structures of bromothymol blue revealed by using quantum chemistry with an aid of multivariate analysis of electronic absorption spectra.

Science.gov (United States)

Shimada, Toru; Hasegawa, Takeshi

2017-10-05

The pH dependent chemical structures of bromothymol blue (BTB), which have long been under controversy, are determined by employing a combined technique of multivariate analysis of electronic absorption spectra and quantum chemistry. Principle component analysis (PCA) of the pH dependent spectra apparently reveals that only two chemical species are adequate to fully account for the color changes, with which the spectral decomposition is readily performed by using augmented alternative least-squares (ALS) regression analysis. The quantity variation by the ALS analysis also reveals the practical acid dissociation constant, pK a '. The determination of pK a ' is performed for various ionic strengths, which reveals the thermodynamic acid constant (pK a =7.5) and the number of charge on each chemical species; the yellow form is negatively charged species of -1 and the blue form that of -2. On this chemical information, the quantum chemical calculation is carried out to find that BTB molecules take the pure quinoid form in an acid solution and the quinoid-phenolate form in an alkaline solution. The time-dependent density functional theory (TD-DFT) calculations for the theoretically determined chemical structures account for the peak shift of the electronic spectra. In this manner, the structures of all the chemical species appeared in equilibrium have finally been confirmed. Copyright © 2017 Elsevier B.V. All rights reserved.

Photon-Electron Interactions in Dirac Quantum Materials

Energy Technology Data Exchange (ETDEWEB)

Xu, Xiaodong [Univ. of Washington, Seattle, WA (United States). Dept. of Material Science and Engineering

2017-11-10

The objective of this proposal was to explore the fundamental light-matter interactions in a new class of Dirac quantum materials, atomically thin transition metal dichalcogenides (TMDs). Monolayer TMDs are newly discovered two-dimensional semiconductors with direct bandgap. Due to their hexagonal lattice structure, the band edge localizes at corner of Brillouin zone, i.e. “Dirac valleys”. This gives the corresponding electron states a “valley index” (or pseudospin) in addition to the real spin. Remarkably, the valley pseudospins have circularly polarized optical selection rules, providing the first solid state system for dynamic control of the valley degree of freedom. During this award, we have developed a suite of advanced nano-optical spectroscopy tools in the investigation and manipulation of charge, spin, and valley degrees of freedom in monolayer semiconductors. Emerging physical phenomena, such as quantum coherence between valley pseudospins, have been demonstrated for the first time in solids. In addition to monolayers, we have developed a framework in engineering, formulating, and understanding valley pseudospin physics in 2D heterostructures formed by different monolayer semiconductors. We demonstrated long-lived valley-polarized interlayer excitons with valley-dependent many-body interaction effects. These works push the research frontier in understanding the light-matter interactions in atomically-thin quantum materials for protentional transformative energy technologies.

Probing quantum coherence in single-atom electron spin resonance

Science.gov (United States)

Willke, Philip; Paul, William; Natterer, Fabian D.; Yang, Kai; Bae, Yujeong; Choi, Taeyoung; Fernández-Rossier, Joaquin; Heinrich, Andreas J.; Lutz, Christoper P.

2018-01-01

Spin resonance of individual spin centers allows applications ranging from quantum information technology to atomic-scale magnetometry. To protect the quantum properties of a spin, control over its local environment, including energy relaxation and decoherence processes, is crucial. However, in most existing architectures, the environment remains fixed by the crystal structure and electrical contacts. Recently, spin-polarized scanning tunneling microscopy (STM), in combination with electron spin resonance (ESR), allowed the study of single adatoms and inter-atomic coupling with an unprecedented combination of spatial and energy resolution. We elucidate and control the interplay of an Fe single spin with its atomic-scale environment by precisely tuning the phase coherence time T2 using the STM tip as a variable electrode. We find that the decoherence rate is the sum of two main contributions. The first scales linearly with tunnel current and shows that, on average, every tunneling electron causes one dephasing event. The second, effective even without current, arises from thermally activated spin-flip processes of tip spins. Understanding these interactions allows us to maximize T2 and improve the energy resolution. It also allows us to maximize the amplitude of the ESR signal, which supports measurements even at elevated temperatures as high as 4 K. Thus, ESR-STM allows control of quantum coherence in individual, electrically accessible spins. PMID:29464211

Organic molecules as tools to control the growth, surface structure, and redox activity of colloidal quantum dots.

Science.gov (United States)

Weiss, Emily A

2013-11-19

In order to achieve efficient and reliable technology that can harness solar energy, the behavior of electrons and energy at interfaces between different types or phases of materials must be understood. Conversion of light to chemical or electrical potential in condensed phase systems requires gradients in free energy that allow the movement of energy or charge carriers and facilitate redox reactions and dissociation of photoexcited states (excitons) into free charge carriers. Such free energy gradients are present at interfaces between solid and liquid phases or between inorganic and organic materials. Nanostructured materials have a higher density of these interfaces than bulk materials. Nanostructured materials, however, have a structural and chemical complexity that does not exist in bulk materials, which presents a difficult challenge: to lower or eliminate energy barriers to electron and energy flux that inevitably result from forcing different materials to meet in a spatial region of atomic dimensions. Chemical functionalization of nanostructured materials is perhaps the most versatile and powerful strategy for controlling the potential energy landscape of their interfaces and for minimizing losses in energy conversion efficiency due to interfacial structural and electronic defects. Colloidal quantum dots are semiconductor nanocrystals synthesized with wet-chemical methods and coated in organic molecules. Chemists can use these model systems to study the effects of chemical functionalization of nanoscale organic/inorganic interfaces on the optical and electronic properties of a nanostructured material, and the behavior of electrons and energy at interfaces. The optical and electronic properties of colloidal quantum dots have an intense sensitivity to their surface chemistry, and their organic adlayers make them dispersible in solvent. This allows researchers to use high signal-to-noise solution-phase spectroscopy to study processes at interfaces. In this

Quantum photonics

CERN Document Server

Pearsall, Thomas P

2017-01-01

This textbook employs a pedagogical approach that facilitates access to the fundamentals of Quantum Photonics. It contains an introductory description of the quantum properties of photons through the second quantization of the electromagnetic field, introducing stimulated and spontaneous emission of photons at the quantum level. Schrödinger’s equation is used to describe the behavior of electrons in a one-dimensional potential. Tunneling through a barrier is used to introduce the concept of non­locality of an electron at the quantum level, which is closely-related to quantum confinement tunneling, resonant tunneling, and the origin of energy bands in both periodic (crystalline) and aperiodic (non-crystalline) materials. Introducing the concepts of reciprocal space, Brillouin zones, and Bloch’s theorem, the determination of electronic band structure using the pseudopotential method is presented, allowing direct computation of the band structures of most group IV, group III-V, and group II-VI semiconducto...

Nonequilibrium Electron Transport Through a Quantum Dot from Kubo Formula

International Nuclear Information System (INIS)

Lue Rong; Zhang Guangming

2005-01-01

Based on the Kubo formula for an electron tunneling junction, we revisit the nonequilibrium transport properties through a quantum dot. Since the Fermi level of the quantum dot is set by the conduction electrons of the leads, we calculate the electron current from the left side by assuming the quantum dot coupled to the right lead as another side of the tunneling junction, and the other way round is used to calculate the current from the right side. By symmetrizing these two currents, an effective local density states on the dot can be obtained, and is discussed at high and low temperatures, respectively.

Controlling electron quantum dot qubits by spin-orbit interactions

International Nuclear Information System (INIS)

Stano, P.

2007-01-01

Single electron confined in a quantum dot is studied. A special emphasis is laid on the spin properties and the influence of spin-orbit interactions on the system. The study is motivated by a perspective exploitation of the spin of the confined electron as a qubit, a basic building block of in a foreseen quantum computer. The electron is described using the single band effective mass approximation, with parameters typical for a lateral electrostatically defined quantum dot in a GaAs/AlGaAs heterostructure. The stemming data for the analysis are obtained by numerical methods of exact diagonalization, however, all important conclusions are explained analytically. The work focuses on three main areas -- electron spectrum, phonon induced relaxation and electrically and magnetically induced Rabi oscillations. It is shown, how spin-orbit interactions influence the energy spectrum, cause finite spin relaxation and allow for all-electrical manipulation of the spin qubit. Among the main results is the discovery of easy passages, where the spin relaxation is unusually slow and the qubit is protected against parasitic electrical fields connected with manipulation by resonant electromagnetic fields. The results provide direct guide for manufacturing quantum dots with much improved properties, suitable for realizing single electron spin qubits. (orig.)

Controlling electron quantum dot qubits by spin-orbit interactions

Energy Technology Data Exchange (ETDEWEB)

Stano, P.

2007-01-15

Single electron confined in a quantum dot is studied. A special emphasis is laid on the spin properties and the influence of spin-orbit interactions on the system. The study is motivated by a perspective exploitation of the spin of the confined electron as a qubit, a basic building block of in a foreseen quantum computer. The electron is described using the single band effective mass approximation, with parameters typical for a lateral electrostatically defined quantum dot in a GaAs/AlGaAs heterostructure. The stemming data for the analysis are obtained by numerical methods of exact diagonalization, however, all important conclusions are explained analytically. The work focuses on three main areas -- electron spectrum, phonon induced relaxation and electrically and magnetically induced Rabi oscillations. It is shown, how spin-orbit interactions influence the energy spectrum, cause finite spin relaxation and allow for all-electrical manipulation of the spin qubit. Among the main results is the discovery of easy passages, where the spin relaxation is unusually slow and the qubit is protected against parasitic electrical fields connected with manipulation by resonant electromagnetic fields. The results provide direct guide for manufacturing quantum dots with much improved properties, suitable for realizing single electron spin qubits. (orig.)

Electron-longitudinal-acoustic-phonon scattering in double-quantum-dot based quantum gates

International Nuclear Information System (INIS)

Zhao Peiji; Woolard, Dwight L.

2008-01-01

We propose a nanostructure design which can significantly suppress longitudinal-acoustic-phonon-electron scattering in double-quantum-dot based quantum gates for quantum computing. The calculated relaxation rates vs. bias voltage exhibit a double-peak feature with a minimum approaching 10 5 s -1 . In this matter, the energy conservation law prohibits scattering contributions from phonons with large momenta; furthermore, increasing the barrier height between the double quantum dots reduces coupling strength between the dots. Hence, the joint action of the energy conservation law and the decoupling greatly reduces the scattering rates. The degrading effects of temperatures can be reduced simply by increasing the height of the barrier between the dots

Electron-Electron and Electron-Phonon interactions effects on the tunnel electronic spectrum of PbS quantum dots

Science.gov (United States)

Wang, Hongyue; Lhuillier, Emmanuel; Yu, Qian; Mottaghizadeh, Alireza; Ulysse, Christian; Zimmers, Alexandre; Dubertret, Benoit; Aubin, Herve

2015-03-01

We present a tunnel spectroscopy study of the electronic spectrum of single PbS Quantum Dots (QDs) trapped between nanometer-spaced electrodes, measured at low temperature T=5 K. The carrier filling of the QD can be controlled either by the drain voltage in the shell filling regime or by a gate voltage. In the empty QD, the tunnel spectrum presents the expected signature of the 8x degenerated excited levels. In the drain controlled shell filling regime, the levels degeneracies are lifted by the global electrostatic Coulomb energy of the QD; in the gate controlled shell filling regime, the levels degeneracies are lifted by the intra-Coulomb interactions. In the charged quantum dot, electron-phonons interactions lead to the apparition of Franck-Condon side bands on the single excited levels and possibly Franck Condon blockade at low energy. The sharpening of excited levels at higher gate voltage suggests that the magnitude of electron-phonon interactions is decreased upon increasing the electron filling in the quantum dot. This work was supported by the French ANR Grants 10-BLAN-0409-01, 09-BLAN-0388-01, by the Region Ile-de-France in the framework of DIM Nano-K and by China Scholarship Council.

Polarized electrons, trions, and nuclei in charged quantum dots

Science.gov (United States)

Bracker, A. S.; Tischler, J. G.; Korenev, V. L.; Gammon, D.

2003-07-01

We have investigated spin polarization in GaAs quantum dots. Excitons and trions are polarized directly by optical excitation and studied through polarization of photoluminescence. Electrons and nuclei are polarized indirectly through subsequent relaxation processes. Polarized electrons are identified by the Hanle effect for exciton and trion photoluminescence, while polarized nuclei are identified through the Overhauser effect in individual charged quantum dots.

Complex dynamics in planar two-electron quantum dots

Energy Technology Data Exchange (ETDEWEB)

Schroeter, Sebastian Josef Arthur

2013-06-25

Quantum dots play an important role in a wide range of recent experimental and technological developments. In particular they are promising candidates for realisations of quantum bits and further applications in quantum information theory. The harmonically confined Hooke's atom model is experimentally verified and separates in centre-of-mass and relative coordinates. Findings that are contradictory to this separability call for an extension of the model, in particular changing the confinement potential. In order to study effects of an anharmonic confinement potential on spectral properties of planar two-electron quantum dots a sophisticated numerical approach is developed. Comparison between the Helium atom, Hooke's atom and an anharmonic potential model are undertaken in order to improve the description of quantum dots. Classical and quantum features of complexity and chaos are investigated and used to characterise the dynamics of the system to be mixed regular-chaotic. Influence of decoherence can be described by quantum fidelity, which measures the effect of a perturbation on the time evolution. The quantum fidelity of eigenstates of the system depends strongly on the properties of the perturbation. Several methods for solving the time-dependent Schrödinger equation are implemented and a high level of accuracy for long time evolutions is achieved. The concept of offset entanglement, the entanglement of harmonic models in the noninteracting limit, is introduced. This concept explains different questions raised in the literature for harmonic quantum dot models, recently. It shows that only in the groundstate the electrons are not entangled in the fermionic sense. The applicability, validity, and origin of Hund's first rule in general quantum dot models is further addressed. In fact Hund's first rule is only applicable, and in this case also valid, for one pair of singlet and triplet states in Hooke's atom. For more realistic models of two-electron

Optical properties of the semiconductor quantum structure

International Nuclear Information System (INIS)

Haratizadeh, H.; Holtz, P.O.; Monemar, B.; Karlsoon, K.F.; Moskalenko, E.S.; Amano, H.; Akasaki, I.; Schoenfeld, W.V.; Garcia, J.M.; Petroff, P.M.

2004-01-01

Optical properties of the quantum structures have been discussed with emphasize of the AlGaN/GaN multiple quantum wells and InAs/GaAs quantum dot structures. We report on a detailed study of low temperature photoluminescence in Al 0 .07Ga 0 .93 N/GaN multiple quantum wells. The structures were nominally undoped multiple quantum well grown on sapphire substrate. The structure from discrete well width variations is here resolved in photoluminescence spectra. The results demonstrate that the theoretically estimated fields in this work are consistent with the experimental spectra

Quantum mechanical electronic structure calculation reveals orientation dependence of hydrogen bond energy in proteins.

Science.gov (United States)

Mondal, Abhisek; Datta, Saumen

2017-06-01

Hydrogen bond plays a unique role in governing macromolecular interactions with exquisite specificity. These interactions govern the fundamental biological processes like protein folding, enzymatic catalysis, molecular recognition. Despite extensive research work, till date there is no proper report available about the hydrogen bond's energy surface with respect to its geometric parameters, directly derived from proteins. Herein, we have deciphered the potential energy landscape of hydrogen bond directly from the macromolecular coordinates obtained from Protein Data Bank using quantum mechanical electronic structure calculations. The findings unravel the hydrogen bonding energies of proteins in parametric space. These data can be used to understand the energies of such directional interactions involved in biological molecules. Quantitative characterization has also been performed using Shannon entropic calculations for atoms participating in hydrogen bond. Collectively, our results constitute an improved way of understanding hydrogen bond energies in case of proteins and complement the knowledge-based potential. Proteins 2017; 85:1046-1055. © 2017 Wiley Periodicals, Inc. © 2017 Wiley Periodicals, Inc.

Hot electron dynamics at semiconductor surfaces: Implications for quantum dot photovoltaics

Science.gov (United States)

Tisdale, William A., III

Finding a viable supply of clean, renewable energy is one of the most daunting challenges facing the world today. Solar cells have had limited impact in meeting this challenge because of their high cost and low power conversion efficiencies. Semiconductor nanocrystals, or quantum dots, are promising materials for use in novel solar cells because they can be processed with potentially inexpensive solution-based techniques and because they are predicted to have novel optoelectronic properties that could enable the realization of ultra-efficient solar power converters. However, there is a lack of fundamental understanding regarding the behavior of highly-excited, or "hot," charge carriers near quantum-dot and semiconductor interfaces, which is of paramount importance to the rational design of high-efficiency devices. The elucidation of these ultrafast hot electron dynamics is the central aim of this Dissertation. I present a theoretical framework for treating the electronic interactions between quantum dots and bulk semiconductor surfaces and propose a novel experimental technique, time-resolved surface second harmonic generation (TR-SHG), for probing these interactions. I then describe a series of experimental investigations into hot electron dynamics in specific quantum-dot/semiconductor systems. A two-photon photoelectron spectroscopy (2PPE) study of the technologically-relevant ZnO(1010) surface reveals ultrafast (sub-30fs) cooling of hot electrons in the bulk conduction band, which is due to strong electron-phonon coupling in this highly polar material. The presence of a continuum of defect states near the conduction band edge results in Fermi-level pinning and upward (n-type) band-bending at the (1010) surface and provides an alternate route for electronic relaxation. In monolayer films of colloidal PbSe quantum dots, chemical treatment with either hydrazine or 1,2-ethanedithiol results in strong and tunable electronic coupling between neighboring quantum dots

Coulomb drag: a probe of electron interactions in coupled quantum wells

DEFF Research Database (Denmark)

Jauho, Antti-Pekka

1996-01-01

As semiconductor devices shrink in size and in dimensionality, interactions between charge carriers become more and more important. There is a simple physical reason behind this behavior: fewer carriers lead to less effective screening, and hence stronger effective interactions. A point in case...... are one-dimensional systems (quantum wires): there electron-electron interactions may lead to a behavior, which is qualitatively different from the standard Fermi liquid picture (Luttinger liquids). Electron-electron interactions also play a central role in the fractional quantum Hall effect, which...... be the study of quantum wires: there the interactions may lead to even more dramatic effects...

Exploring semiconductor quantum dots and wires by high resolution electron microscopy

Energy Technology Data Exchange (ETDEWEB)

Molina, S I [Departamento de Ciencia de los Materiales e Ing Metalurgica y Q. Inorganica, F. de Ciencias, Universidad de Cadiz, Campus Rio San Pedro. 11510 Puerto Real (Cadiz) (Spain); Galindo, P L [Departamento de Lenguajes y Sistemas Informaticos, CASEM, Universidad de Cadiz, Campus Rio San Pedro. 11510 Puerto Real (Cadiz) (Spain); Gonzalez, L; Ripalda, J M [Instituto de Microelectronica de Madrid (CNM, CSIC), Isaac Newton 8, 28760 Tres Cantos, Madrid (Spain); Varela, M; Pennycook, S J, E-mail: sergio.molina@uca.e [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge TN 37831 (United States)

2010-02-01

We review in this communication our contribution to the structural characterisation of semiconductor quantum dots and wires by high resolution electron microscopy, both in phase-contrast and Z-contrast modes. We show how these techniques contribute to predict the preferential sites of nucleation of these nanostructures, and also determine the compositional distribution in 1D and 0D nanostructures. The results presented here were produced in the framework of the European Network of Excellence entitled {sup S}elf-Assembled semiconductor Nanostructures for new Devices in photonics and Electronics (SANDiE){sup .}

DFT simulation, quantum chemical electronic structure, spectroscopic and structure-activity investigations of 2-benzothiazole acetonitrile.

Science.gov (United States)

Arjunan, V; Thillai Govindaraja, S; Jose, Sujin P; Mohan, S

2014-07-15

The Fourier transform infrared and FT-Raman spectra of 2-benzothiazole acetonitrile (BTAN) have been recorded in the range 4000-450 and 4000-100 cm(-1) respectively. The conformational analysis of the compound has been carried out to obtain the stable geometry of the compound. The complete vibrational assignment and analysis of the fundamental modes of the compound are carried out using the experimental FTIR and FT-Raman data and quantum chemical studies. The experimental vibrational frequencies are compared with the wavenumbers derived theoretically by B3LYP gradient calculations employing the standard 6-31G(**), high level 6-311++G(**) and cc-pVTZ basis sets. The structural parameters, thermodynamic properties and vibrational frequencies of the normal modes obtained from the B3LYP methods are in good agreement with the experimental data. The (1)H (400 MHz; CDCl3) and (13)C (100 MHz;CDCl3) nuclear magnetic resonance (NMR) spectra are also recorded. The electronic properties, the energies of the highest occupied and lowest unoccupied molecular orbitals are measured by DFT approach. The kinetic stability of the molecule has been determined from the frontier molecular orbital energy gap. The charges of the atoms and the structure-chemical reactivity relations of the compound are determined by its chemical potential, global hardness, global softness, electronegativity, electrophilicity and local reactivity descriptors by conceptual DFT methods. The non-linear optical properties of the compound have been discussed by measuring the polarisability and hyperpolarisability tensors. Copyright © 2014 Elsevier B.V. All rights reserved.

Electron-beam generated porous dextran gels: experimental and quantum chemical studies.

Science.gov (United States)

Naumov, Sergej; Knolle, Wolfgang; Becher, Jana; Schnabelrauch, Matthias; Reichelt, Senta

2014-06-01

The aim of this work was to investigate the reaction mechanism of electron-beam generated macroporous dextran cryogels by quantum chemical calculation and electron paramagnetic resonance measurements. Electron-beam radiation was used to initiate the cross-linking reaction of methacrylated dextran in semifrozen aqueous solutions. The pore morphology of the resulting cryogels was visualized by scanning electron microscopy. Quantum chemical calculations and electron paramagnetic resonance studies provided information on the most probable reaction pathway and the chain growth radicals. The most probable reaction pathway was a ring opening reaction and the addition of a C-atom to the double-bond of the methacrylated dextran molecule. First detailed quantum chemical calculation on the reaction mechanism of electron-beam initiated cross-linking reaction of methacrylated dextran are presented.

Quantum mechanics of electronic-rotational energy transfer in F(2P) + H2 collisions

International Nuclear Information System (INIS)

Wyatt, R.E.; Walker, R.B.

1977-01-01

A theoretical study is made of electronic-rotational energy transfer in F( 2 P) + H 2 three-dimensional collisions, with electronic matrix elements from DIM theory. The quantum close-coupled equations are integrated via the R-matrix propagation method. Inelastic quenching probabilities are emphasized, with and without simulated open reaction channels. Interweaving patterns in the transition probability for even and odd nuclear parity vs. J (total angular momentum quantum number) are analyzed in terms of avoided crossing structure in the electrotational energy correlation diagrams. Localized regions where electronic quenching is dominant are identified in the correlation diagrams, and are confirmed in separate calculations which neglect interchannel mixing in local regions of the atom-molecule separation. Open reaction channels are found to have little influence on the quenching probabilities in these low energy calculations

The features of ballistic electron transport in a suspended quantum point contact

International Nuclear Information System (INIS)

Shevyrin, A. A.; Budantsev, M. V.; Bakarov, A. K.; Toropov, A. I.; Pogosov, A. G.; Ishutkin, S. V.; Shesterikov, E. V.

2014-01-01

A suspended quantum point contact and the effects of the suspension are investigated by performing identical electrical measurements on the same experimental sample before and after the suspension. In both cases, the sample demonstrates conductance quantization. However, the suspended quantum point contact shows certain features not observed before the suspension, namely, plateaus at the conductance values being non-integer multiples of the conductance quantum, including the “0.7-anomaly.” These features can be attributed to the strengthening of electron-electron interaction because of the electric field confinement within the suspended membrane. Thus, the suspended quantum point contact represents a one-dimensional system with strong electron-electron interaction

Electron acoustic solitary waves in unmagnetized two electron population dense plasmas

International Nuclear Information System (INIS)

Mahmood, S.; Masood, W.

2008-01-01

The electron acoustic solitary waves are studied in unmagnetized two population electron quantum plasmas. The quantum hydrodynamic model is employed with the Sagdeev potential approach to describe the arbitrary amplitude electron acoustic waves in a two electron population dense Fermi plasma. It is found that hot electron density hump structures are formed in the subsonic region in such type of quantum plasmas. The wave amplitude as well as the width of the soliton are increased with the increase of percentage presence of cold (thinly populated) electrons in a multicomponent quantum plasma. It is found that an increase in quantum diffraction parameter broadens the nonlinear structure. Furthermore, the amplitude of the nonlinear electron acoustic wave is found to increase with the decrease in Mach number. The numerical results are also presented to understand the formation of solitons in two electron population Fermi plasmas.

Evaluation of quantum-chemical methods of radiolysis stability for macromolecular structures

International Nuclear Information System (INIS)

Postolache, Cristian; Matei, Lidia

2005-01-01

The behavior of macromolecular structures in ionising fields was analyzed by quantum-chemical methods. In this study the primary radiolytic effect was analyzed using a two-step radiolytic mechanism: a) ionisation of molecule and spatial redistribution of atoms in order to reach a minimum value of energy, characteristic to the quantum state; b) neutralisation of the molecule by electron capture and its rapid dissociation into free radicals. Chemical bonds suspected to break are located in the distribution region of LUMO orbital and have minimal homolytic dissociation energies. Representative polymer structures (polyethylene, polypropylene, polystyrene, poly α and β polystyrene, polyisobutylene, polytetrafluoroethylene, poly methylsiloxanes) were analyzed. (authors)

Computation of quantum electron transport with local current conservation using quantum trajectories

International Nuclear Information System (INIS)

Alarcón, A; Oriols, X

2009-01-01

A recent proposal for modeling time-dependent quantum electron transport with Coulomb and exchange correlations using quantum (Bohm) trajectories (Oriols 2007 Phys. Rev. Lett. 98 066803) is extended towards the computation of the total (particle plus displacement) current in mesoscopic devices. In particular, two different methods for the practical computation of the total current are compared. The first method computes the particle and the displacement currents from the rate of Bohm particles crossing a particular surface and the time-dependent variations of the electric field there. The second method uses the Ramo–Shockley theorem to compute the total current on that surface from the knowledge of the Bohm particle dynamics in a 3D volume and the time-dependent variations of the electric field on the boundaries of that volume. From a computational point of view, it is shown that both methods achieve local current conservation, but the second is preferred because it is free from 'spurious' peaks. A numerical example, a Bohm trajectory crossing a double-barrier tunneling structure, is presented, supporting the conclusions

Electron Raman scattering in semiconductor quantum wire in an external magnetic field

International Nuclear Information System (INIS)

Betancourt-Riera, Ri; Nieto Jalil, J M; Riera, R; Betancourt-Riera, Re; Rosas, R

2008-01-01

The differential cross-section for an electron Raman scattering process in a semiconductor quantum wire in the presence of an external magnetic field perpendicular to the plane of confinement is calculated. We assume a single parabolic conduction band. The emission spectra for different scattering configurations and the selection rules for the processes are studied. Singularities in the spectra are found and interpreted. The electron Raman scattering studied here can be used to provide direct information about the electron band and subband structure of these confinement systems. The magnetic field distribution is considered constant with value B 0 inside the wire and zero outside

Optical and Micro-Structural Characterization of MBE Grown Indium Gallium Nitride Polar Quantum Dots

KAUST Repository

El Afandy, Rami

2011-07-07

Gallium nitride and related materials have ushered in scientific and technological breakthrough for lighting, mass data storage and high power electronic applications. These III-nitride materials have found their niche in blue light emitting diodes and blue laser diodes. Despite the current development, there are still technological problems that still impede the performance of such devices. Three-dimensional nanostructures are proposed to improve the electrical and thermal properties of III-nitride optical devices. This thesis consolidates the characterization results and unveils the unique physical properties of polar indium gallium nitride quantum dots grown by molecular beam epitaxy technique. In this thesis, a theoretical overview of the physical, structural and optical properties of polar III-nitrides quantum dots will be presented. Particular emphasis will be given to properties that distinguish truncated-pyramidal III-nitride quantum dots from other III-V semiconductor based quantum dots. The optical properties of indium gallium nitride quantum dots are mainly dominated by large polarization fields, as well as quantum confinement effects. Hence, the experimental investigations for such quantum dots require performing bandgap calculations taking into account the internal strain fields, polarization fields and confinement effects. The experiments conducted in this investigation involved the transmission electron microscopy and x-ray diffraction as well as photoluminescence spectroscopy. The analysis of the temperature dependence and excitation power dependence of the PL spectra sheds light on the carrier dynamics within the quantum dots, and its underlying wetting layer. A further analysis shows that indium gallium nitride quantum dots through three-dimensional confinements are able to prevent the electronic carriers from getting thermalized into defects which grants III-nitrides quantum dot based light emitting diodes superior thermally induced optical

Two-electron states in double quantum dot in direct electric field

International Nuclear Information System (INIS)

Burdov, V.A.

2001-01-01

One determined analytically the wave functions of stationary states and the spectrum of two-electron system in symmetric binary quantum point. It is shown that in the normal state at the absence of external electric field the electrons due to the Coulomb blockade can not be collectively in one quantum point. In the external electric field the situation changes. When a certain critical value of field intensity is reached the probability of detection of both electrons in one quantum point by a jump increases from zero up to 1 [ru

Dynamical localization of two electrons in triple-quantum-dot shuttles

International Nuclear Information System (INIS)

Qu, Jinxian; Duan, Suqing; Yang, Ning

2012-01-01

The dynamical localization phenomena in two-electron quantum-dot shuttles driven by an ac field have been investigated and analyzed by the Floquet theory. The dynamical localization occurs near the anti-crossings in Floquet eigenenergy spectrum. The oscillation of the quantum-dot shuttles may increase the possibility of the dynamical localization. Especially, even if the two electrons are initialized in two neighbor dots, they can be localized there for appropriate intensity of the driven field. The studies may help the understanding of dynamical localization in electron shuttles and expand the application potential of nanoelectromechanical devices. -- Highlights: ► The dynamical localization in electron shuttle is studied by Floquet theory. ► There is a relation between quasi-energy anti-crossings and dynamical localization. ► The oscillation of quantum dot increases the dynamical localization. ► Even the electrons are initialized in different dots, the localization can occur.

Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots

International Nuclear Information System (INIS)

Taboada, A. G.; Alonso-Alvarez, D.; Alen, B.; Rivera, A.; Ripalda, J. M.; Llorens, J. M.; Martin-Sanchez, J.; Gonzalez, Y.; Sanchez, A. M.; Beltran, A. M.; Molina, S. I.; Bozkurt, M.; Ulloa, J. M.; Koenraad, P. M.; Garcia, J. M.

2010-01-01

We present experimental evidence of Sb incorporation inside InAs/GaAs(001) quantum dots exposed to an antimony flux immediately before capping with GaAs. The Sb composition profile inside the nanostructures as measured by cross-sectional scanning tunneling and electron transmission microscopies show two differentiated regions within the quantum dots, with an Sb rich alloy at the tip of the quantum dots. Atomic force microscopy and transmission electron microscopy micrographs show increased quantum-dot height with Sb flux exposure. The evolution of the reflection high-energy electron-diffraction pattern suggests that the increased height is due to changes in the quantum-dot capping process related to the presence of segregated Sb atoms. These structural and compositional changes result in a shift of the room-temperature photoluminescence emission from 1.26 to 1.36 μm accompanied by an order of magnitude increase in the room-temperature quantum-dot luminescence intensity.

Quasiparticle properties of a coupled quantum-wire electron-phonon system

DEFF Research Database (Denmark)

Hwang, E. H.; Hu, Ben Yu-Kuang; Sarma, S. Das

1996-01-01

We study leading-order many-body effects of longitudinal-optical phonons on electronic properties of one-dimensional quantum-wire systems. We calculate the quasiparticle properties of a weakly polar one-dimensional electron gas in the presence of both electron-phonon and electron-electron interac......We study leading-order many-body effects of longitudinal-optical phonons on electronic properties of one-dimensional quantum-wire systems. We calculate the quasiparticle properties of a weakly polar one-dimensional electron gas in the presence of both electron-phonon and electron......-electron interactions, The leading-order dynamical screening approximation (GW approximation) is used to obtain the electron self-energy, the quasiparticle spectral function, and the quasiparticle damping rate in our calculation by treating electrons and phonons on an equal footing. Our theory includes effects (within...... theoretical results for quasiparticle properties....

Electron states in quantum rings with structural distortions under axial or in-plane magnetic fields

International Nuclear Information System (INIS)

Planelles, J; Rajadell, F; Climente, J I

2007-01-01

A comprehensive study of anisotropic quantum rings, QRs, subject to axial and in-plane magnetic field, both aligned and transverse to the anisotropy direction, is carried out. Elliptical QRs for a wide range of eccentricity values and also perfectly circular QRs including one or more barriers disturbing the QR current are considered. These models mimic anisotropic geometry deformations and mass diffusion occurring in the QR fabrication process. Symmetry considerations and simplified analytical models supply physical insight into the obtained numerical results. Our study demonstrates that, except for unusual extremely large eccentricities, QR geometry deformations only appreciably influence a few low-lying states, while the effect of barriers disturbing the QR current is stronger and affects all studied states to a similar extent. We also show that the response of the electron states to in-plane magnetic fields provides accurate information on the structural anisotropy

Interface and photoluminescence characteristics of graphene-(GaN/InGaN){sub n} multiple quantum wells hybrid structure

Energy Technology Data Exchange (ETDEWEB)

Wang, Liancheng, E-mail: wanglc@semi.ac.cn, E-mail: lzq@semi.ac.cn, E-mail: zh.zhang@hebut.edu.cn [Engineering Product Development Pillar (EPD), Singapore University of Technology & Design (SUTD), 8 Somapah Road, Singapore 487372 (Singapore); Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Mind Star (Beijing) Technology Co., Ltd., Zhongguancun South Street, Haidian District, No. 45 Hing Fat Building 1001, Beijing 100872 (China); Liu, Zhiqiang, E-mail: wanglc@semi.ac.cn, E-mail: lzq@semi.ac.cn, E-mail: zh.zhang@hebut.edu.cn; Tian, Ying Dong; Yi, Xiaoyan; Wang, Junxi; Li, Jinmin; Wang, Guohong [Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Zhang, Zi-Hui, E-mail: wanglc@semi.ac.cn, E-mail: lzq@semi.ac.cn, E-mail: zh.zhang@hebut.edu.cn [Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401 (China)

2016-04-14

The effects of graphene on the optical properties of active system, e.g., the InGaN/GaN multiple quantum wells, are thoroughly investigated and clarified. Here, we have investigated the mechanisms accounting for the photoluminescence reduction for the graphene covered GaN/InGaN multiple quantum wells hybrid structure. Compared to the bare multiple quantum wells, the photoluminescence intensity of graphene covered multiple quantum wells showed a 39% decrease after excluding the graphene absorption losses. The responsible mechanisms have been identified with the following factors: (1) the graphene two dimensional hole gas intensifies the polarization field in multiple quantum wells, thus steepening the quantum well band profile and causing hole-electron pairs to further separate; (2) a lower affinity of graphene compared to air leading to a weaker capability to confine the excited hot electrons in multiple quantum wells; and (3) exciton transfer through non-radiative energy transfer process. These factors are theoretically analysed based on advanced physical models of semiconductor devices calculations and experimentally verified by varying structural parameters, such as the indium fraction in multiple quantum wells and the thickness of the last GaN quantum barrier spacer layer.

A surface-gated InSb quantum well single electron transistor

International Nuclear Information System (INIS)

Orr, J M S; Buckle, P D; Fearn, M; Storey, C J; Buckle, L; Ashley, T

2007-01-01

Single electron charging effects in a surface-gated InSb/AlInSb QW structure are reported. This material, due to its large g-factor and light effective mass, offers considerable advantages over more commonly used materials, such as GaAs, for quantum information processing devices. However, differences in material and device technology result in significant processing challenges. Simple Coulomb blockade and quantized confinement models are considered to explain the observation of conductance oscillations in these structures. The charging energy (e 2 /C) is found to be comparable with the energy spectrum for single particle states (ΔE)

Electron spin relaxation in a transition-metal dichalcogenide quantum dot

Science.gov (United States)

Pearce, Alexander J.; Burkard, Guido

2017-06-01

We study the relaxation of a single electron spin in a circular quantum dot in a transition-metal dichalcogenide monolayer defined by electrostatic gating. Transition-metal dichalcogenides provide an interesting and promising arena for quantum dot nano-structures due to the combination of a band gap, spin-valley physics and strong spin-orbit coupling. First we will discuss which bound state solutions in different B-field regimes can be used as the basis for qubits states. We find that at low B-fields combined spin-valley Kramers qubits to be suitable, while at large magnetic fields pure spin or valley qubits can be envisioned. Then we present a discussion of the relaxation of a single electron spin mediated by electron-phonon interaction via various different relaxation channels. In the low B-field regime we consider the spin-valley Kramers qubits and include impurity mediated valley mixing which will arise in disordered quantum dots. Rashba spin-orbit admixture mechanisms allow for relaxation by in-plane phonons either via the deformation potential or by piezoelectric coupling, additionally direct spin-phonon mechanisms involving out-of-plane phonons give rise to relaxation. We find that the relaxation rates scale as \\propto B 6 for both in-plane phonons coupling via deformation potential and the piezoelectric effect, while relaxation due to the direct spin-phonon coupling scales independant to B-field to lowest order but depends strongly on device mechanical tension. We will also discuss the relaxation mechanisms for pure spin or valley qubits formed in the large B-field regime.

Fine structure and optical pumping of spins in individual semiconductor quantum dots

Science.gov (United States)

Bracker, Allan S.; Gammon, Daniel; Korenev, Vladimir L.

2008-11-01

We review spin properties of semiconductor quantum dots and their effect on optical spectra. Photoluminescence and other types of spectroscopy are used to probe neutral and charged excitons in individual quantum dots with high spectral and spatial resolution. Spectral fine structure and polarization reveal how quantum dot spins interact with each other and with their environment. By taking advantage of the selectivity of optical selection rules and spin relaxation, optical spin pumping of the ground state electron and nuclear spins is achieved. Through such mechanisms, light can be used to process spins for use as a carrier of information.

Fine structure and optical pumping of spins in individual semiconductor quantum dots

International Nuclear Information System (INIS)

Bracker, Allan S; Gammon, Daniel; Korenev, Vladimir L

2008-01-01

We review spin properties of semiconductor quantum dots and their effect on optical spectra. Photoluminescence and other types of spectroscopy are used to probe neutral and charged excitons in individual quantum dots with high spectral and spatial resolution. Spectral fine structure and polarization reveal how quantum dot spins interact with each other and with their environment. By taking advantage of the selectivity of optical selection rules and spin relaxation, optical spin pumping of the ground state electron and nuclear spins is achieved. Through such mechanisms, light can be used to process spins for use as a carrier of information

Quantum entanglement in electron optics generation, characterization, and applications

CERN Document Server

Chandra, Naresh

2013-01-01

This monograph forms an interdisciplinary study in atomic, molecular, and quantum information (QI) science. Here a reader will find that applications of the tools developed in QI provide new physical insights into electron optics as well as properties of atoms & molecules which, in turn, are useful in studying QI both at fundamental and applied levels. In particular, this book investigates entanglement properties of flying electronic qubits generated in some of the well known processes capable of taking place in an atom or a molecule following the absorption of a photon. Here, one can generate Coulombic or fine-structure entanglement of electronic qubits. The properties of these entanglements differ not only from each other, but also from those when spin of an inner-shell photoelectron is entangled with the polarization of the subsequent fluorescence. Spins of an outer-shell electron and of a residual photoion can have free or bound entanglement in a laboratory.

Polarized Fine Structure in the Photoluminescence Excitation Spectrum of a Negatively Charged Quantum Dot

Science.gov (United States)

Ware, M. E.; Stinaff, E. A.; Gammon, D.; Doty, M. F.; Bracker, A. S.; Gershoni, D.; Korenev, V. L.; Bădescu, Ş. C.; Lyanda-Geller, Y.; Reinecke, T. L.

2005-10-01

We report polarized photoluminescence excitation spectroscopy of the negative trion in single charge-tunable InAs/GaAs quantum dots. The spectrum exhibits a p-shell resonance with polarized fine structure arising from the direct excitation of the electron spin triplet states. The energy splitting arises from the axially symmetric electron-hole exchange interaction. The magnitude and sign of the polarization are understood from the spin character of the triplet states and a small amount of quantum dot asymmetry, which mixes the wave functions through asymmetric e-e and e-h exchange interactions.

Ligand-assisted fabrication, structure, and luminescence properties of Fe:ZnSe quantum dots

International Nuclear Information System (INIS)

Xie, Ruishi; Zhang, Xingquan; Liu, Haifeng

2014-01-01

Highlights: • A green route is developed for synthesis of water-soluble and fluorescent Fe:ZnSe quantum dots. • Tunable luminescence intensity can be realized with different ligand-to-Zn molar ratios. • The obtained quantum dots are in the so-called “quantum confinement regime”. -- Abstract: Here, we report a synthetic route for highly emissive Fe:ZnSe quantum dots in aqueous media using the mercaptoacetic acid ligand as stabilizing agent. The structural, morphological, componential, and optical properties of the resulting quantum dots were explored by the X-ray diffraction, transmission electron microscopy, energy-dispersive X-ray spectroscopy, inductively coupled plasma mass spectrometry, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, photoluminescence and UV–visible absorption spectroscopies. The average crystallite size was calculated to be about ca., 4.0 nm using the Scherrer equation, which correlates well with the value obtained from the transmission electron microscopy analysis. The obtained water-soluble Fe:ZnSe quantum dots in the so-called “quantum confinement regime” are spherical shaped, possess the cubic sphalerite crystal structure, and exhibit tunable luminescence properties. The presence of mercaptoacetic acid on the surface of Fe:ZnSe quantum dots was confirmed by the Fourier transform infrared spectroscopy measurements. As the ligand/Zn molar ratio increases from 1.3 to 2.8, there is little shift in the absorption peak of the Fe:ZnSe sample, indicating that the particle size of the obtained quantum dots is not changed during the synthetic process. The photoluminescence quantum yield of the as-prepared water-soluble Fe:ZnSe quantum dots can be up to 39%. The molar ratio of ligand-to-Zn plays a crucial role in determining the final luminescence properties of the resulting quantum dots, and the maximum PL intensity appears as the ligand-to-Zn molar ratio is 2.2. In addition, the underlying mechanism for

Ligand-assisted fabrication, structure, and luminescence properties of Fe:ZnSe quantum dots

Energy Technology Data Exchange (ETDEWEB)

Xie, Ruishi, E-mail: rxie@foxmail.com; Zhang, Xingquan; Liu, Haifeng

2014-03-15

Highlights: • A green route is developed for synthesis of water-soluble and fluorescent Fe:ZnSe quantum dots. • Tunable luminescence intensity can be realized with different ligand-to-Zn molar ratios. • The obtained quantum dots are in the so-called “quantum confinement regime”. -- Abstract: Here, we report a synthetic route for highly emissive Fe:ZnSe quantum dots in aqueous media using the mercaptoacetic acid ligand as stabilizing agent. The structural, morphological, componential, and optical properties of the resulting quantum dots were explored by the X-ray diffraction, transmission electron microscopy, energy-dispersive X-ray spectroscopy, inductively coupled plasma mass spectrometry, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, photoluminescence and UV–visible absorption spectroscopies. The average crystallite size was calculated to be about ca., 4.0 nm using the Scherrer equation, which correlates well with the value obtained from the transmission electron microscopy analysis. The obtained water-soluble Fe:ZnSe quantum dots in the so-called “quantum confinement regime” are spherical shaped, possess the cubic sphalerite crystal structure, and exhibit tunable luminescence properties. The presence of mercaptoacetic acid on the surface of Fe:ZnSe quantum dots was confirmed by the Fourier transform infrared spectroscopy measurements. As the ligand/Zn molar ratio increases from 1.3 to 2.8, there is little shift in the absorption peak of the Fe:ZnSe sample, indicating that the particle size of the obtained quantum dots is not changed during the synthetic process. The photoluminescence quantum yield of the as-prepared water-soluble Fe:ZnSe quantum dots can be up to 39%. The molar ratio of ligand-to-Zn plays a crucial role in determining the final luminescence properties of the resulting quantum dots, and the maximum PL intensity appears as the ligand-to-Zn molar ratio is 2.2. In addition, the underlying mechanism for

Quantum theory for 1D X-ray free electron laser

Science.gov (United States)

Anisimov, Petr M.

2018-06-01

Classical 1D X-ray Free Electron Laser (X-ray FEL) theory has stood the test of time by guiding FEL design and development prior to any full-scale analysis. Future X-ray FELs and inverse-Compton sources, where photon recoil approaches an electron energy spread value, push the classical theory to its limits of applicability. After substantial efforts by the community to find what those limits are, there is no universally agreed upon quantum approach to design and development of future X-ray sources. We offer a new approach to formulate the quantum theory for 1D X-ray FELs that has an obvious connection to the classical theory, which allows for immediate transfer of knowledge between the two regimes. We exploit this connection in order to draw quantum mechanical conclusions about the quantum nature of electrons and generated radiation in terms of FEL variables.

Hybridization of electron states in a step quantum well in a magnetic field

International Nuclear Information System (INIS)

Barseghyan, M.G.; Kirakosyan, A.A.

2005-01-01

The quantum states and energy levels of an electrion in a rectangular step quantum well in a magnetic field parallel to the plane of two-dimentional electron gas are investigated. It is shown that the joint effect of the magnetic field and confining potential of the quantum well results in redical change of the electron spectrum. The dependence of the electron energy levels on the quantum well parameters, magnetic field induction and projection of the wave-vector along the magnetic field induction are calculated. Numerical calculations are carried out for a AlAs/GaAlAs/GaAs/AlAs step quantum well

The electron-nuclear spin system in (In,Ga)As quantum dots

International Nuclear Information System (INIS)

Auer, Thomas

2008-01-01

For a long time, the nuclear spins in quantum dots were virtually ignored. It was thought that the interaction strength was so small that the interaction between the nuclei and electrons could only be observed under very specific optical pumping conditions. Then, in the pursuit of long living electron spins as a building block for quantum information storage and processing, their destructive action on the lifetime of the electron spin became apparent. The nuclear spin system increasingly gained the attention of the quantum dot community. It seemed that the randomly oriented, fluctuating nuclear spins can only be counteracted by strong magnetic fields suppressing the depolarising effect of the random nuclear spin fluctuation fields on a single electron spin. Gradually, however, the work done thirty years before on the electron-nuclear spin system in bulk semiconductors attracted the notice of scientists again. Some of the old experiments could be performed with quantum dots as well. It could be shown that the nuclear spins in quantum dots may well be polarised by optical orientation and that their action is not always destructive at all. The nuclear spins in quantum dots are increasingly used in order to create and tailor a specific environment for a single electron in a quantum dot. In this way quantum dots contain their own ''nuclear nanomagnet''. This might be the future of the studies on the electron-nuclear spin system. The aim of this work is to shed some more light on the complex interdependent system formed of an electron spin and the nuclear spin ensemble in quantum dots. The effects are manifold, often unexpected, sometimes miraculous. Nevertheless, I believe that this work is another tiny step towards the understanding of this challenging system. I have shown that the randomly polarised nuclear spin system always affects the electron spin of a single electron in quantum dots. Further we have seen, however, that the nuclear spin system can easily be

Quantum Electron Tunneling in Respiratory Complex I1

Science.gov (United States)

Hayashi, Tomoyuki; Stuchebrukhov, Alexei A.

2014-01-01

We have simulated the atomistic details of electronic wiring of all Fe/S clusters in complex I, a key enzyme in the respiratory electron transport chain. The tunneling current theory of many-electron systems is applied to the broken-symmetry (BS) states of the protein at the ZINDO level. One-electron tunneling approximation is found to hold in electron tunneling between the anti-ferromagnetic binuclear and tetranuclear Fe/S clusters with moderate induced polarization of the core electrons. Calculated tunneling energy is about 3 eV higher than Fermi level in the band gap of the protein, which supports that the mechanism of electron transfer is quantum mechanical tunneling, as in the rest of electron transport chain. Resulting electron tunneling pathways consist of up to three key contributing protein residues between neighboring Fe/S clusters. A distinct signature of the wave properties of electrons is observed as quantum interferences when multiple tunneling pathways exist. In N6a-N6b, electron tunnels along different pathways depending on the involved BS states, suggesting possible fluctuations of the tunneling pathways driven by the local protein environment. The calculated distance dependence of the electron transfer rates with internal water molecules included are in good agreement with a reported phenomenological relation. PMID:21495666

Quantum synchrotron spectra from semirelativistic electrons in teragauss magnetic fields

International Nuclear Information System (INIS)

Brainerd, J.J.

1987-01-01

Synchrotron spectra are calculated from quantum electrodynamic transition rates for thermal and power-law electron distributions. It is shown that quantum effects appear in thermal spectra when the photon energy is greater than the electron temperature, and in power-law spectra when the electron energy in units of the electron rest mass times the magnetic field strength in units of the critical field strength is of order unity. These spectra are compared with spectra calculated from the ultrarelativistic approximation for synchrotron emission. It is found that the approximation for the power-law spectra is good, and the approximation for thermal spectra produces the shape of the spectrum accurately but fails to give the correct normalization. Single photon pair creation masks the quantum effects for power-law distributions, so only modifications to thermal spectra are important for gamma-ray bursts. 13 references

Quantum mechanical force field for water with explicit electronic polarization.

Science.gov (United States)

Han, Jaebeom; Mazack, Michael J M; Zhang, Peng; Truhlar, Donald G; Gao, Jiali

2013-08-07

A quantum mechanical force field (QMFF) for water is described. Unlike traditional approaches that use quantum mechanical results and experimental data to parameterize empirical potential energy functions, the present QMFF uses a quantum mechanical framework to represent intramolecular and intermolecular interactions in an entire condensed-phase system. In particular, the internal energy terms used in molecular mechanics are replaced by a quantum mechanical formalism that naturally includes electronic polarization due to intermolecular interactions and its effects on the force constants of the intramolecular force field. As a quantum mechanical force field, both intermolecular interactions and the Hamiltonian describing the individual molecular fragments can be parameterized to strive for accuracy and computational efficiency. In this work, we introduce a polarizable molecular orbital model Hamiltonian for water and for oxygen- and hydrogen-containing compounds, whereas the electrostatic potential responsible for intermolecular interactions in the liquid and in solution is modeled by a three-point charge representation that realistically reproduces the total molecular dipole moment and the local hybridization contributions. The present QMFF for water, which is called the XP3P (explicit polarization with three-point-charge potential) model, is suitable for modeling both gas-phase clusters and liquid water. The paper demonstrates the performance of the XP3P model for water and proton clusters and the properties of the pure liquid from about 900 × 10(6) self-consistent-field calculations on a periodic system consisting of 267 water molecules. The unusual dipole derivative behavior of water, which is incorrectly modeled in molecular mechanics, is naturally reproduced as a result of an electronic structural treatment of chemical bonding by XP3P. We anticipate that the XP3P model will be useful for studying proton transport in solution and solid phases as well as across

Quantum electron transfer processes induced by thermo-coherent ...

Indian Academy of Sciences (India)

WINTEC

Thermo-coherent state; electron transfer; quantum rate. 1. Introduction. The study ... two surfaces,16 namely, one electron two-centered exchange problem,7–10 many ... temperature classical regime for the single and the two-mode cases have ...

Quantum-mechanical treatment of an electron undergoing synchrotron radiation.

Science.gov (United States)

White, D.

1972-01-01

The problem of an electron moving perpendicular to an intense magnetic field is approached from the framework of quantum mechanics. A numerical solution to the related rate equations describing the probabilities of occupation of the electron's energy states is put forth along with the expected errors involved. The quantum-mechanical approach is found to predict a significant amount of energy broadening with time for an initially monoenergetic electron beam entering a region of an intense magnetic field as long as the product of initial energy and magnetic field is of order 50 MG BeV or larger.

Towards quantum optics and entanglement with electron spin ensembles in semiconductors

NARCIS (Netherlands)

van der Wal, Caspar H.; Sladkov, Maksym

We discuss a technique and a material system that enable the controlled realization of quantum entanglement between spin-wave modes of electron ensembles in two spatially separated pieces of semiconductor material. The approach uses electron ensembles in GaAs quantum wells that are located inside

Electronic structures and magnetic/optical properties of metal phthalocyanine complexes

Energy Technology Data Exchange (ETDEWEB)

Baba, Shintaro; Suzuki, Atsushi, E-mail: suzuki@mat.usp.ac.jp; Oku, Takeo [Department of Materials Science, The University of Shiga Prefecture. 2500 Hassaka, Hikone, Shiga 522-8533 (Japan)

2016-02-01

Electronic structures and magnetic / optical properties of metal phthalocyanine complexes were studied by quantum calculations using density functional theory. Effects of central metal and expansion of π orbital on aromatic ring as conjugation system on the electronic structures, magnetic, optical properties and vibration modes of infrared and Raman spectra of metal phthalocyanines were investigated. Electron and charge density distribution and energy levels near frontier orbital and excited states were influenced by the deformed structures varied with central metal and charge. The magnetic parameters of chemical shifts in {sup 13}C-nuclear magnetic resonance ({sup 13}C-NMR), principle g-tensor, A-tensor, V-tensor of electric field gradient and asymmetry parameters derived from the deformed structures with magnetic interaction of nuclear quadruple interaction based on electron and charge density distribution with a bias of charge near ligand under crystal field.

Study of quantum spin correlations of relativistic electron pairs - Testing nonlocality of relativistic quantum mechanics

International Nuclear Information System (INIS)

Bodek, K.; Rozpędzik, D.; Zejma, J.; Caban, P.; Rembieliński, J.; Włodarczyk, M.; Ciborowski, J.; Enders, J.; Köhler, A.; Kozela, A.

2013-01-01

The Polish-German project QUEST aims at studying relativistic quantum spin correlations of the Einstein-Rosen-Podolsky-Bohm type, through measurement of the correlation function and the corresponding probabilities for relativistic electron pairs. The results will be compared to theoretical predictions obtained by us within the framework of relativistic quantum mechanics, based on assumptions regarding the form of the relativistic spin operator. Agreement or divergence will be interpreted in the context of non-uniqueness of the relativistic spin operator in quantum mechanics as well as dependence of the correlation function on the choice of observables representing the spin. Pairs of correlated electrons will originate from the Mo/ller scattering of polarized 15 MeV electrons provided by the superconducting Darmstadt electron linear accelerator S-DALINAC, TU Darmstadt, incident on a Be target. Spin projections will be determined using the Mott polarimetry technique. Measurements (starting 2013) are planned for longitudinal and transverse beam polarizations and different orientations of the beam polarization vector w.r.t. the Mo/ller scattering plane. This is the first project to study relativistic spin correlations for particles with mass

Nonplasmonic Hot-Electron Photocurrents from Mn-Doped Quantum Dots in Photoelectrochemical Cells.

Science.gov (United States)

Dong, Yitong; Rossi, Daniel; Parobek, David; Son, Dong Hee

2016-03-03

We report the measurement of the hot-electron current in a photoelectrochemical cell constructed from a glass/ITO/Al2 O3 (ITO=indium tin oxide) electrode coated with Mn-doped quantum dots, where hot electrons with a large excess kinetic energy were produced through upconversion of the excitons into hot electron hole pairs under photoexcitation at 3 eV. In our recent study (J. Am. Chem. Soc. 2015, 137, 5549), we demonstrated the generation of hot electrons in Mn-doped II-VI semiconductor quantum dots and their usefulness in photocatalytic H2 production reaction, taking advantage of the more efficient charge transfer of hot electrons compared with band-edge electrons. Here, we show that hot electrons produced in Mn-doped CdS/ZnS quantum dots possess sufficient kinetic energy to overcome the energy barrier from a 5.4-7.5 nm thick Al2 O3 layer producing a hot-electron current in photoelectrochemical cell. This work demonstrates the possibility of harvesting hot electrons not only at the interface of the doped quantum dot surface, but also far away from it, thus taking advantage of the capability of hot electrons for long-range electron transfer across a thick energy barrier. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Advanced Electronic Structure Calculations For Nanoelectronics Using Finite Element Bases and Effective Mass Theory.

Energy Technology Data Exchange (ETDEWEB)

Gamble, John King [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Nielsen, Erik [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Baczewski, Andrew David [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Moussa, Jonathan Edward [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Gao, Xujiao [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Salinger, Andrew G. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Muller, Richard P. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2017-07-01

This paper describes our work over the past few years to use tools from quantum chemistry to describe electronic structure of nanoelectronic devices. These devices, dubbed "artificial atoms", comprise a few electrons, con ned by semiconductor heterostructures, impurities, and patterned electrodes, and are of intense interest due to potential applications in quantum information processing, quantum sensing, and extreme-scale classical logic. We detail two approaches we have employed: nite-element and Gaussian basis sets, exploring the interesting complications that arise when techniques that were intended to apply to atomic systems are instead used for artificial, solid-state devices.

Quasiparticle GW calculations within the GPAW electronic structure code

DEFF Research Database (Denmark)

Hüser, Falco

The GPAW electronic structure code, developed at the physics department at the Technical University of Denmark, is used today by researchers all over the world to model the structural, electronic, optical and chemical properties of materials. They address fundamental questions in material science...... and use their knowledge to design new materials for a vast range of applications. Todays hottest topics are, amongst many others, better materials for energy conversion (e.g. solar cells), energy storage (batteries) and catalysts for the removal of environmentally dangerous exhausts. The mentioned...... properties are to a large extent governed by the physics on the atomic scale, that means pure quantum mechanics. For many decades, Density Functional Theory has been the computational method of choice, since it provides a fairly easy and yet accurate way of determining electronic structures and related...

Physics colloquium: Electron counting in quantum dots in and out of equilibrium

CERN Multimedia

Geneva University

2011-01-01

GENEVA UNIVERSITY Ecole de physique Département de physique nucléaire et corspusculaire 24, quai Ernest-Ansermet 1211 Genève 4 Tél.: (022) 379 62 73 Fax: (022) 379 69 92olé   Lundi 31 octobre 2011 17h00 - Ecole de Physique, Auditoire Stueckelberg PHYSICS COLLOQUIUM « Electron counting in quantum dots in and out of equilibrium » Prof. Klaus Ensslin Solid State Physics Laboratory, ETH Zurich, 8093 Zurich, Switzerland   Electron transport through quantum dots is governed by Coulomb blockade. Using a nearby quantum point contact the time-dependent charge flow through quantum dots can be monitored on the basis of single electrons. This way electron transport has been investigated in equilibrium as well as out of equilibrium. Recently it has become possible to experimentally verify the fluctuation theorem. The talk will also address electron counting experiments in grapheme. Une verrée ...

Electronic structure of defects in semiconductor heterojunctions

International Nuclear Information System (INIS)

Haussy, Bernard; Ganghoffer, Jean Francois

2002-01-01

Full text.heterojunctions and semiconductors and superlattices are well known and well used by people interested in optoelectronics communications. Components based on the use of heterojunctions are interesting for confinement of light and increase of quantum efficiency. An heterojunction is the contact zone between two different semiconductors, for example GaAs and Ga 1-x Al x As. Superlattices are a succession of heterojunctions (up to 10 or 20). These systems have been the subjects of many experiments ao analyse the contact between semiconductors. They also have been theoretically studied by different types of approach. The main result of those studies is the prediciton of band discontinuities. Defects in heterojunctions are real traps for charge carriers; they can affect the efficiency of the component decreasing the currents and the fluxes in it. the knowledge of their electronic structure is important, a great density of defects deeply modifies the electronic structure of the whole material creating real new bands of energy in the band structure of the component. in the first part of this work, we will describe the heterostructure and the defect in terms of quantum wells and discrete levels. This approach allows us to show the role of the width of the quantum well describing the structure but induces specific behaviours due to the one dimensional modelling. Then a perturbative treatment is proposed using the Green's functions formalism. We build atomic chains with different types of atoms featuring the heterostructure and the defect. Densities of states of a structure with a defect and levels associated to the defect are obtained. Results are comparable with the free electrons work, but the modelling do not induce problems due to a one dimensional approach. To extend our modelling, a three dimensions approach, based on a cavity model, is investigated. The influence of the defect, - of hydrogenoid type - introduced in the structure, is described by a cavity

In situ electron-beam polymerization stabilized quantum dot micelles.

Science.gov (United States)

Travert-Branger, Nathalie; Dubois, Fabien; Renault, Jean-Philippe; Pin, Serge; Mahler, Benoit; Gravel, Edmond; Dubertret, Benoit; Doris, Eric

2011-04-19

A polymerizable amphiphile polymer containing PEG was synthesized and used to encapsulate quantum dots in micelles. The quantum dot micelles were then polymerized using a "clean" electron beam process that did not require any post-irradiation purification. Fluorescence spectroscopy revealed that the polymerized micelles provided an organic coating that preserved the quantum dot fluorescence better than nonpolymerized micelles, even under harsh conditions. © 2011 American Chemical Society

Electron Spin Coherence Times in Si/SiGe Quantum Dots

Science.gov (United States)

Jock, R. M.; He, Jianhua; Tyryshkin, A. M.; Lyon, S. A.; Lee, C.-H.; Huang, S.-H.; Liu, C. W.

2014-03-01

Single electron spin states in silicon have shown a great deal of promise as qubits due to their long spin relaxation (T1) and coherence (T2) times. Recent results exhibit a T2 of 250 us for electrons confined in Si/SiGe quantum dots at 350 mK. These experiments used conventional X-band (10 GHz) pulsed Electron Spin Resonance on a large area (3.5 mm x 20 mm), dual-gated, undoped Si/SiGe heterostructure quantum dots. These dots are induced in a natural Si quantum well by e-beam defined gates having a lithographic radius of 150 nm and pitch of 700 nm. The relatively large size of these dots led to closely spaced energy levels and long T2's could only be measured at sub-Kelvin temperatures. At 2K confined electrons displayed a 3 us T2, which is comparable to that of 2D electrons at that temperature. Decreasing the quantum dot size increases the electron confinement and reduces the effects of valley-splitting and spin-orbit coupling on the electron spin coherence times. We will report results on dots with 80 nm lithographic radii and a 375 nm pitch. This device displays an extended electron coherence time of 30 us at 2K, suggesting tighter confinement of electrons. Further measurements at lower temperatures are in progress. This work was supported in part by NSF through the Materials World Network program (DMR-1107606) and the Princeton MRSEC (DMR-0819860), and in part by the U.S. Army Research Office (W911NF-13-1-0179).

Correlated nuclear and electronic dynamics in photoionized systems studied by quantum and mixed quantum-classical approaches

International Nuclear Information System (INIS)

Li, Zheng

2014-09-01

The advent of free electron lasers and high harmonic sources enables the investigation of electronic and nuclear dynamics of molecules and solids with atomic spatial resolution and femtosecond/attosecond time resolution, using bright and ultrashort laser pulses of frequency from terahertz to hard x-ray range. With the help of ultrashort laser pulses, the nuclear and electronic dynamics can be initiated, monitored and actively controlled at the typical time scale in the femtosecond to attosecond realm. Meanwhile, theoretical tools are required to describe the underlying mechanism. This doctoral thesis focuses on the development of theoretical tools based on full quantum mechanical multiconfiguration time-dependent Hartree (MCTDH) and mixed quantum classical approaches, which can be applied to describe the dynamical behavior of gas phase molecules and strongly correlated solids in the presence of ultrashort laser pulses. In the first part of this thesis, the focus is on the motion of electron holes in gas phase molecular ions created by extreme ultraviolet (XUV) photoionization and watched by spectroscopic approaches. The XUV photons create electron-hole in the valence orbitals of molecules by photoionization, the electron hole, as a positively charged quasi-particle, can then interact with the nuclei and the rest of electrons, leading to coupled non-Born-Oppenheimer dynamics. I present our study on electron-hole relaxation dynamics in valence ionized molecular ions of moderate size, using quantum wave packet and mixed quantum-classical approaches, using photoionized [H + (H 2 O) n ] + molecular ion as example. We have shown that the coupled motion of the electron-hole and the nuclei can be mapped out with femtosecond resolution by core-level x-ray transient absorption spectroscopy. Furthermore, in specific cases, the XUV photon can create a coherent electron hole, that can maintain its coherence to time scales of ∝ 1 picosecond. Employing XUV pump - IR probe

Electron energy spectrum in core-shell elliptic quantum wire

Directory of Open Access Journals (Sweden)

V.Holovatsky

2007-01-01

Full Text Available The electron energy spectrum in core-shell elliptic quantum wire and elliptic semiconductor nanotubes are investigated within the effective mass approximation. The solution of Schrodinger equation based on the Mathieu functions is obtained in elliptic coordinates. The dependencies of the electron size quantization spectrum on the size and shape of the core-shell nanowire and nanotube are calculated. It is shown that the ellipticity of a quantum wire leads to break of degeneration of quasiparticle energy spectrum. The dependences of the energy of odd and even electron states on the ratio between semiaxes are of a nonmonotonous character. The anticrosing effects are observed at the dependencies of electron energy spectrum on the transversal size of the core-shell nanowire.

Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wells

Energy Technology Data Exchange (ETDEWEB)

Landesman, Jean-Pierre, E-mail: jean-pierre.landesman@univ-rennes1.fr [Institut de Physique de Rennes, CNRS-UMR 6251, Université Rennes 1, F-35042 Rennes (France); Jiménez, Juan; Torres, Alfredo [GdS Optronlab, Dpto. Fisica de la Materia Condensada, Universidad de Valladolid, 47011 Valladolid (Spain); Levallois, Christophe; Léger, Yoan; Beck, Alexandre [UMR FOTON, CNRS, INSA-Rennes, 20 avenue des buttes de Coësmes, F-35708 Rennes (France); Pommereau, Frédéric [III-V Lab, 1 Avenue Augustin Fresnel, RD128, F-91767 Palaiseau (France); Frigeri, Cesare [CNR-IMEM Istituto, Parco area delle Scienze 37/A, 43010 Parma (Italy); Rhallabi, Ahmed [Institut des Matériaux Jean-Rouxel, CNRS-UMR 6502, Université Nantes 1, F-44322 Nantes (France)

2016-07-15

The general objective is the investigation of the defects formed by dry etching tools such as those involved in the fabrication of photonic devices with III–V semiconductors. Emphasis is put on plasma exposures with chlorine-based chemistries. In addition to identifying these defects and describing their effects on the electro-optic and structural properties, the long-term target would be to predict the impact on the parameters of importance for photonic devices, and possibly include these predictions in their design. The work is first centered on explaining the experimental methodology. This methodology starts with the design and growth of a quantum well structure on indium phosphide, including ternary indium arsenide/phosphide quantum wells with graded arsenic/phosphor composition. These samples have then been characterized by luminescence methods (photo- and cathodoluminescence), high-resolution transmission electron microscopy, and secondary ion mass spectrometry. As one of the parameters of importance in this study, the authors have also included the doping level. The samples have been exposed to the etching plasmas for “short” durations that do not remove completely the quantum wells, but change their optical signature. No masking layer with lithographic features was involved as this work is purely oriented to study the interaction between the plasma and the samples. A significant difference in the luminescence spectra of the as-grown undoped and doped samples is observed. A mechanism describing the effect of the built-in electric field appearing as a consequence of the doping profile is proposed. This mechanism involves quantum confined Stark effect and electric-field induced carrier escape from the quantum wells. In the following part, the effects of exposure to various chlorine-based plasmas were explored. Differences are again observed between the undoped and doped samples, especially for chemistries containing silicon tetrachloride. Secondary ion

Quantum theory of the electron behaviour in solid states and its application to the theory of superconductivity

International Nuclear Information System (INIS)

Rangelov, J.

1993-01-01

A physical model of an electron describing the classical Lorentz's electron (LE), nonrelativistic quantum Schroedinger's electron (SE) and relativistic quantum Dirac's electron (DE) has been discovered in order to describe the processes in metals, alloys and chemical compounds. As a result of the new point of view proposed the physical meaning of the basic electron parameters as the classical radius of LE, its self energy and rest mass, proper mechanical moment (MCHM) and frequency of de Broglie's pilot wave and causes for stability of Schroedinger's package of waves and SE's extraordinary behaviour has been discovered. A new physical interpretation of collectivized valence electrons behaviour in solid state has been established. On this basis the real processes ensuring energetically the superconductivity state has been described. All auxiliary processes increasing all superconductivity parameters have been calculated. It is pointed out that the basic parameters of electron-phonon system, electron-phonon interaction and the polarization ability of the crystal lattice structure have to be calculated also. (orig.)

Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells

Science.gov (United States)

Tito, M. A.; Pusep, Yu. A.; Gold, A.; Teodoro, M. D.; Marques, G. E.; LaPierre, R. R.

2016-03-01

The electron transport and recombination processes of photoexcited electron-hole pairs were studied in InGaAs/InP single quantum wells. Comprehensive transport data analysis reveals a asymmetric shape of the quantum well potential where the electron mobility was found to be dominated by interface-roughness scattering. The low-temperature time-resolved photoluminescence was employed to investigate recombination kinetics of photogenerated electrons. Remarkable modification of Auger recombination was observed with variation of the electron mobility. In high mobility quantum wells, the increasing pump power resulted in a new and unexpected phenomenon: a considerably enhanced Auger non-radiative recombination time. We propose that the distribution of the photoexcited electrons over different conduction band valleys might account for this effect. In low mobility quantum wells, disorder-induced relaxation of the momentum conservation rule causes inter-valley transitions to be insignificant; as a consequence, the non-radiative recombination time is reduced with the increase in pump power. Thus, interface-roughness scattering was found responsible for both transport properties and dynamic optical response in InGaAs/InP quantum wells.

Cavity Exciton-Polariton mediated, Single-Shot Quantum Non-Demolition measurement of a Quantum Dot Electron Spin

Science.gov (United States)

Puri, Shruti; McMahon, Peter; Yamamoto, Yoshihisa

2014-03-01

The quantum non-demolition (QND) measurement of a single electron spin is of great importance in measurement-based quantum computing schemes. The current single-shot readout demonstrations exhibit substantial spin-flip backaction. We propose a QND readout scheme for quantum dot (QD) electron spins in Faraday geometry, which differs from previous proposals and implementations in that it relies on a novel physical mechanism: the spin-dependent Coulomb exchange interaction between a QD spin and optically-excited quantum well (QW) microcavity exciton-polaritons. The Coulomb exchange interaction causes a spin-dependent shift in the resonance energy of the polarized polaritons, thus causing the phase and intensity response of left circularly polarized light to be different to that of the right circularly polarized light. As a result the QD electron's spin can be inferred from the response to a linearly polarized probe. We show that by a careful design of the system, any spin-flip backaction can be eliminated and a QND measurement of the QD electron spin can be performed within a few 10's of nanoseconds with fidelity 99:95%. This improves upon current optical QD spin readout techniques across multiple metrics, including fidelity, speed and scalability. National Institute of Informatics, 2-1-2 Hitotsubashi, Chiyoda-ku, Tokyo 101-8430, Japan.

Electronic properties in a quantum well structure of Weyl semimetal

International Nuclear Information System (INIS)

You, Wen-Long; Zhou, Jiao-Jiao; Wang, Xue-Feng; Oleś, Andrzej M.

2016-01-01

We investigate the confined states and transport of three-dimensional Weyl electrons around a one-dimensional external rectangular electrostatic potential. The confined states with finite transverse wave vector exist at energies higher than the half well depth or lower than the half barrier height. The rectangular potential appears completely transparent to the normal incident electrons but not otherwise. The tunneling transmission coefficient is sensitive to their incident angle and shows resonant peaks when their energy coincides with the confined spectra. In addition, for the electrons in the conduction (valence) band through a potential barrier (well), the transmission spectrum has a gap of width increasing with the incident angle. Interestingly, the electron linear zero-temperature conductance over the potential can approach zero when the Fermi energy is aligned to the top and bottom energies of the potential, when only electron beams normal to the potential interfaces can pass through. The considered structure can be used to collimate the Weyl electron beams.

Nanosecond-timescale spin transfer using individual electrons in a quadruple-quantum-dot device

Energy Technology Data Exchange (ETDEWEB)

Baart, T. A.; Jovanovic, N.; Vandersypen, L. M. K. [QuTech and Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Reichl, C.; Wegscheider, W. [Solid State Physics Laboratory, ETH Zürich, 8093 Zürich (Switzerland)

2016-07-25

The ability to coherently transport electron-spin states between different sites of gate-defined semiconductor quantum dots is an essential ingredient for a quantum-dot-based quantum computer. Previous shuttles using electrostatic gating were too slow to move an electron within the spin dephasing time across an array. Here, we report a nanosecond-timescale spin transfer of individual electrons across a quadruple-quantum-dot device. Utilizing enhanced relaxation rates at a so-called hot spot, we can upper bound the shuttle time to at most 150 ns. While actual shuttle times are likely shorter, 150 ns is already fast enough to preserve spin coherence in, e.g., silicon based quantum dots. This work therefore realizes an important prerequisite for coherent spin transfer in quantum dot arrays.

Fundamental Structure of Loop Quantum Gravity

Science.gov (United States)

Han, Muxin; Ma, Yongge; Huang, Weiming

In the recent twenty years, loop quantum gravity, a background independent approach to unify general relativity and quantum mechanics, has been widely investigated. The aim of loop quantum gravity is to construct a mathematically rigorous, background independent, non-perturbative quantum theory for a Lorentzian gravitational field on a four-dimensional manifold. In the approach, the principles of quantum mechanics are combined with those of general relativity naturally. Such a combination provides us a picture of, so-called, quantum Riemannian geometry, which is discrete on the fundamental scale. Imposing the quantum constraints in analogy from the classical ones, the quantum dynamics of gravity is being studied as one of the most important issues in loop quantum gravity. On the other hand, the semi-classical analysis is being carried out to test the classical limit of the quantum theory. In this review, the fundamental structure of loop quantum gravity is presented pedagogically. Our main aim is to help non-experts to understand the motivations, basic structures, as well as general results. It may also be beneficial to practitioners to gain insights from different perspectives on the theory. We will focus on the theoretical framework itself, rather than its applications, and do our best to write it in modern and precise langauge while keeping the presentation accessible for beginners. After reviewing the classical connection dynamical formalism of general relativity, as a foundation, the construction of the kinematical Ashtekar-Isham-Lewandowski representation is introduced in the content of quantum kinematics. The algebraic structure of quantum kinematics is also discussed. In the content of quantum dynamics, we mainly introduce the construction of a Hamiltonian constraint operator and the master constraint project. At last, some applications and recent advances are outlined. It should be noted that this strategy of quantizing gravity can also be extended to

Nonlinear aspects of quantum plasma physics

International Nuclear Information System (INIS)

Shukla, Padma K; Eliasson, B

2010-01-01

Dense quantum plasmas are ubiquitous in planetary interiors and in compact astrophysical objects (e.g., the interior of white dwarf stars, in magnetars, etc.), in semiconductors and micromechanical systems, as well as in the next-generation intense laser-solid density plasma interaction experiments and in quantum X-ray free-electron lasers. In contrast to classical plasmas, quantum plasmas have extremely high plasma number densities and low temperatures. Quantum plasmas are composed of electrons, positrons and holes, which are degenerate. Positrons (holes) have the same (slightly different) mass as electrons, but opposite charge. The degenerate charged particles (electrons, positrons, and holes) obey the Fermi-Dirac statistics. In quantum plasmas, there are new forces associated with (i) quantum statistical electron and positron pressures, (ii) electron and positron tunneling through the Bohm potential, and (iii) electron and positron angular momentum spin. Inclusion of these quantum forces allows the existence of very high-frequency dispersive electrostatic and electromagnetic waves (e.g., in the hard X-ray and gamma-ray regimes) with extremely short wavelengths. In this review paper, we present theoretical backgrounds for some important nonlinear aspects of wave-wave and wave-electron interactions in dense quantum plasmas. Specifically, we focus on nonlinear electrostatic electron and ion plasma waves, novel aspects of three-dimensional quantum electron fluid turbulence, as well as nonlinearly coupled intense electromagnetic waves and localized plasma wave structures. Also discussed are the phase-space kinetic structures and mechanisms that can generate quasistationary magnetic fields in dense quantum plasmas. The influence of the external magnetic field and the electron angular momentum spin on the electromagnetic wave dynamics is discussed. Finally, future perspectives of the nonlinear quantum plasma physics are highlighted. (reviews of topical problems)

Measurement of quantum noise in a single-electron transistor near the quantum limit

Science.gov (United States)

Xue, W. W.; Ji, Z.; Pan, Feng; Stettenheim, Joel; Blencowe, M. P.; Rimberg, A. J.

2009-09-01

Quantum measurement has challenged physicists for almost a century. Classically, there is no lower bound on the noise a measurement may add. Quantum mechanically, however, measuring a system necessarily perturbs it. When applied to electrical amplifiers, this means that improved sensitivity requires increased backaction that itself contributes noise. The result is a strict quantum limit on added amplifier noise. To approach this limit, a quantum-limited amplifier must possess an ideal balance between sensitivity and backaction; furthermore, its noise must dominate that of subsequent classical amplifiers. Here, we report the first complete and quantitative measurement of the quantum noise of a superconducting single-electron transistor (S-SET) near a double Cooper-pair resonance predicted to have the right combination of sensitivity and backaction. A simultaneous measurement of our S-SET's charge sensitivity indicates that it operates within a factor of 3.6 of the quantum limit, a fourfold improvement over the nearest comparable results.

Associated quantum vector bundles and symplectic structure on a quantum space

International Nuclear Information System (INIS)

Coquereaux, R.; Garcia, A.O.; Trinchero, R.

2000-01-01

We define a quantum generalization of the algebra of functions over an associated vector bundle of a principal bundle. Here the role of a quantum principal bundle is played by a Hopf-Galois extension. Smash products of an algebra times a Hopf algebra H are particular instances of these extensions, and in these cases we are able to define a differential calculus over their associated vector bundles without requiring the use of a (bicovariant) differential structure over H. Moreover, if H is coquasitriangular, it coacts naturally on the associated bundle, and the differential structure is covariant. We apply this construction to the case of the finite quotient of the SL q (2) function Hopf algebra at a root of unity (q 3 = 1) as the structure group, and a reduced 2-dimensional quantum plane as both the 'base manifold' and fibre, getting an algebra which generalizes the notion of classical phase space for this quantum space. We also build explicitly a differential complex for this phase space algebra, and find that levels 0 and 2 support a (co)representation of the quantum symplectic group. On this phase space we define vector fields, and with the help of the Sp q structure we introduce a symplectic form relating 1-forms to vector fields. This leads naturally to the introduction of Poisson brackets, a necessary step to do 'classical' mechanics on a quantum space, the quantum plane. (author)

Interacting Electrons and Holes in Quasi-2D Quantum Dots in Strong Magnetic Fields

Science.gov (United States)

Hawrylak, P.; Sheng, W.; Cheng, S.-J.

2004-09-01

Theory of optical properties of interacting electrons and holes in quasi-2D quantum dots in strong magnetic fields is discussed. In two dimensions and the lowest Landau level, hidden symmetries control the interaction of the interacting system with light. By confining electrons and holes into quantum dots hidden symmetries can be removed and the excitation spectrum of electrons and excitons can be observed. We discuss a theory electronic and of excitonic quantum Hall droplets at a filling factorν=2. For an excitonic quantum Hall droplet the characteristic emission spectra are predicted to be related to the total spin of electron and hole configurations. For the electronic droplet the excitation spectrum of the droplet can be mapped out by measuring the emission for increasing number of electrons.

Interacting electrons and holes in quasi-2D quantum dots in strong magnetic fields

International Nuclear Information System (INIS)

Hawrylak, P.; Sheng, W.; Cheng, S.-J.

2004-01-01

Theory of optical properties of interacting electrons and holes in quasi-2D quantum dots in strong magnetic fields is discussed. In two dimensions and the lowest Landau level, hidden symmetries control the interaction of the interacting system with light. By confining electrons and holes into quantum dots hidden symmetries can be removed and the excitation spectrum of electrons and excitons can be observed. We discuss a theory electronic and excitonic quantum Hall droplets at a filling factor υ = 2. For an excitonic quantum Hall droplet the characteristic emission spectra are predicted to be related to the total spin of electron and hole configurations. For the electronic droplet the excitation spectrum of the droplet can be mapped out by measuring the emission for increasing number of electrons. (author)

Electron Raman scattering in semiconductor quantum well wire of cylindrical ring geometry

International Nuclear Information System (INIS)

Betancourt-Riera, Re.; Betancourt-Riera, Ri.; Nieto Jalil, J. M.; Riera, R.

2015-01-01

We study the electron states and the differential cross section for an electron Raman scattering process in a semiconductor quantum well wire of cylindrical ring geometry. The electron Raman scattering developed here can be used to provide direct information about the electron band structures of these confinement systems. We assume that the system grows in a GaAs/Al 0.35 Ga 0.65 As matrix. The system is modeled by considering T = 0 K and also a single parabolic conduction band, which is split into a sub-band system due to the confinement. The emission spectra are discussed for different scattering configurations, and the selection rules for the processes are also studied. Singularities in the spectra are found and interpreted. (paper)

Communication: The ground electronic state of Si2C: Rovibrational level structure, quantum monodromy, and astrophysical implications

International Nuclear Information System (INIS)

Reilly, Neil J.; Kokkin, Damian L.; McCarthy, Michael C.; Changala, P. Bryan; Baraban, Joshua H.; Stanton, John F.

2015-01-01

We report the gas-phase optical detection of Si 2 C near 390 nm and the first experimental investigation of the rovibrational structure of its 1 A 1 ground electronic state using mass-resolved and fluorescence spectroscopy and variational calculations performed on a high-level ab initio potential. From this joint study, it is possible to assign all observed K a = 1 vibrational levels up to 3800 cm −1 with confidence, as well as a number of levels in the K a = 0, 2,  and 3 manifolds. Dixon-dip plots for the bending coordinate (ν 2 ) allow an experimental determination of a barrier to linearity of 783(48) cm −1 (2σ), in good agreement with theory (802(9) cm −1 ). The calculated (K a , ν 2 ) eigenvalue lattice shows an archetypal example of quantum monodromy (absence of a globally valid set of quantum numbers) that is reflected by the experimentally observed rovibrational levels. The present study provides a solid foundation for infrared and optical surveys of Si 2 C in astronomical objects, particularly in the photosphere of N- and J-type carbon stars where the isovalent SiC 2 molecule is known to be abundant

Quantum-mechanical analysis of low-gain free-electron laser oscillators

Science.gov (United States)

Fares, H.; Yamada, M.; Chiadroni, E.; Ferrario, M.

2018-05-01

In the previous classical theory of the low-gain free-electron laser (FEL) oscillators, the electron is described as a point-like particle, a delta function in the spatial space. On the other hand, in the previous quantum treatments, the electron is described as a plane wave with a single momentum state, a delta function in the momentum space. In reality, an electron must have statistical uncertainties in the position and momentum domains. Then, the electron is neither a point-like charge nor a plane wave of a single momentum. In this paper, we rephrase the theory of the low-gain FEL where the interacting electron is represented quantum mechanically by a plane wave with a finite spreading length (i.e., a wave packet). Using the concepts of the transformation of reference frames and the statistical quantum mechanics, an expression for the single-pass radiation gain is derived. The spectral broadening of the radiation is expressed in terms of the spreading length of an electron, the relaxation time characterizing the energy spread of electrons, and the interaction time. We introduce a comparison between our results and those obtained in the already known classical analyses where a good agreement between both results is shown. While the correspondence between our results and the classical results are shown, novel insights into the electron dynamics and the interaction mechanism are presented.

Electronic structure of PPP@ZnO from all-electron quasiarticle calculations

Science.gov (United States)

Höffling, Benjamin; Nabok, Dimitri; Draxl, Claudia; Condensed Matter Theory Group, Humboldt University Berlin Team

We investigate the electronic properties of poly(para-phenylene) (PPP) adsorbed on the non-polar (001) surface of rocksalt (rs) ZnO using all-electron density functional theory (DFT) as well as quasiparticle (QP) calculations within the GW approach. A particular focus is put on the electronic band discontinuities at the interface, where we investigate the impact of quantum confinement, molecular polarization, and charge rearrangement. For our prototypical system, PPP@ZnO, we find a type-I heterostructure. Comparison of the band offsets derived from a QP-treatment of the hybrid system with predictions based on mesoscopic methods, like the Shockley-Anderson model or alignment via the electrostatic potential, reveals the inadequacy of these simple approaches for the prediction of the electronic structure of such inorganic/organic heterosystems. Finally, we explore the optical excitations of the interface compared to the features of the pristine components and discuss the methodological implications for the ab-initio treatment of interface electronics.

Electronic properties of excited states in single InAs quantum dots; Elektronische Struktur angeregter Zustaende einzelner InAs-Quantenpunkte

Energy Technology Data Exchange (ETDEWEB)

Warming, Till

2009-02-20

The application of quantum-mechanical effects in semiconductor nanostructures enables the realization of novel opto-electronic devices. Examples are given by single-photon emitters and emitters of entangled photon pairs, both being essential for quantum cryptography, or for qubit systems as needed for quantum computing. InAs/GaAs quantum dots are one of the most promising candidates for such applications. A detailed knowledge of the electronic properties of quantum dots is a prerequisite for this development. The aim of this work is an experimental access to the detailed electronic structure of the excited states in single InAs/GaAs quantum dots including few-particle effects and in particular exchange interaction. The experimental approach is micro photoluminescence excitation spectroscopy ({mu}PLE). One of the main difficulties using {mu}PLE to probe single QDs is the unambiguous assignment of the observed resonances in the spectrum to specific transitions. By comparing micro photoluminescence ({mu}PL) and {mu}PLE spectra, the identification of the main resonances becomes possible. The key is given by the fine structure of the hot trion. Excitation spectroscopy on single charged QDs enables for the first time the complete observation of a non-trivial fine structure of an excitonic complex in a QD, the hot trion. Modelling based on eight-band k.p theory in combination with a configuration interaction scheme is in excellent agreement. Therewith the simulation also enables realistic predictions on the fine structure of the ground-state exciton which is of large importance for single quantum dot devices. Theory concludes from the observed transitions that the structural symmetry of the QDs is broken. Micro photoluminescence excitation spectroscopy combined with resonantly excited micro photoluminescence enables an optical access to the single particle states of the hole without the influence of few-particle coulomb interactions. Based on this knowledge the exciton

Dynamics of Quantum Causal Structures

Science.gov (United States)

Castro-Ruiz, Esteban; Giacomini, Flaminia; Brukner, Časlav

2018-01-01

It was recently suggested that causal structures are both dynamical, because of general relativity, and indefinite, because of quantum theory. The process matrix formalism furnishes a framework for quantum mechanics on indefinite causal structures, where the order between operations of local laboratories is not definite (e.g., one cannot say whether operation in laboratory A occurs before or after operation in laboratory B ). Here, we develop a framework for "dynamics of causal structures," i.e., for transformations of process matrices into process matrices. We show that, under continuous and reversible transformations, the causal order between operations is always preserved. However, the causal order between a subset of operations can be changed under continuous yet nonreversible transformations. An explicit example is that of the quantum switch, where a party in the past affects the causal order of operations of future parties, leading to a transition from a channel from A to B , via superposition of causal orders, to a channel from B to A . We generalize our framework to construct a hierarchy of quantum maps based on transformations of process matrices and transformations thereof.

Electron transport in quantum dots

CERN Document Server

2003-01-01

When I was contacted by Kluwer Academic Publishers in the Fall of 200 I, inviting me to edit a volume of papers on the issue of electron transport in quantum dots, I was excited by what I saw as an ideal opportunity to provide an overview of a field of research that has made significant contributions in recent years, both to our understanding of fundamental physics, and to the development of novel nanoelectronic technologies. The need for such a volume seemed to be made more pressing by the fact that few comprehensive reviews of this topic have appeared in the literature, in spite of the vast activity in this area over the course of the last decade or so. With this motivation, I set out to try to compile a volume that would fairly reflect the wide range of opinions that has emerged in the study of electron transport in quantum dots. Indeed, there has been no effort on my part to ensure any consistency between the different chapters, since I would prefer that this volume instead serve as a useful forum for the...

Effects of Electric Field on the Valence-Bond Property of an Electron in a Quantum-Dot Molecule

Institute of Scientific and Technical Information of China (English)

王立民; 罗莹; 马本堃

2002-01-01

The electronic structure of the quantum-dot molecules in an electric field is investigated by the finite element method with the effective mass approximation. The numerical calculation results show that the valence bond of the quantum-dot molecule alternates between covalent bonds and ionic bonds as the electric field increases. The valence-bond property can be reflected by the oscillator strength of the intraband transition. The bound state with the highest energy level in the quantum-dot molecule gradually changes into a quasibound state when the electric field increases.

Single electron-spin memory with a semiconductor quantum dot

International Nuclear Information System (INIS)

Young, Robert J; Dewhurst, Samuel J; Stevenson, R Mark; Atkinson, Paola; Bennett, Anthony J; Ward, Martin B; Cooper, Ken; Ritchie, David A; Shields, Andrew J

2007-01-01

We show storage of the circular polarization of an optical field, transferring it to the spin-state of an individual electron confined in a single semiconductor quantum dot. The state is subsequently read out through the electronically-triggered emission of a single photon. The emitted photon shares the same polarization as the initial pulse but has a different energy, making the transfer of quantum information between different physical systems possible. With an applied magnetic field of 2 T, spin memory is preserved for at least 1000 times more than the exciton's radiative lifetime

Classical-quantum correspondence in electron-positron pair creation

International Nuclear Information System (INIS)

Chott, N. I.; Su, Q.; Grobe, R.

2007-01-01

We examine the creation of electron-positron pairs in a very strong force field. Using numerical solutions to quantum field theory we calculate the spatial and momentum probability distributions for the created particles. A comparison with classical mechanical phase space calculations suggests that despite the fully relativistic and quantum mechanical nature of the matter creation process, most aspects can be reproduced accurately in terms of classical mechanics

Unbound states in quantum heterostructures

Directory of Open Access Journals (Sweden)

Ferreira R

2006-01-01

Full Text Available AbstractWe report in this review on the electronic continuum states of semiconductor Quantum Wells and Quantum Dots and highlight the decisive part played by the virtual bound states in the optical properties of these structures. The two particles continuum states of Quantum Dots control the decoherence of the excited electron – hole states. The part played by Auger scattering in Quantum Dots is also discussed.

Many-Body Theory of Proton-Generated Point Defects for Losses of Electron Energy and Photons in Quantum Wells

Science.gov (United States)

Huang, Danhong; Iurov, Andrii; Gao, Fei; Gumbs, Godfrey; Cardimona, D. A.

2018-02-01

The effects of point defects on the loss of either energies of ballistic electron beams or incident photons are studied by using a many-body theory in a multi-quantum-well system. This theory includes the defect-induced vertex correction to a bare polarization function of electrons within the ladder approximation, and the intralayer and interlayer screening of defect-electron interactions is also taken into account in the random-phase approximation. The numerical results of defect effects on both energy-loss and optical-absorption spectra are presented and analyzed for various defect densities, numbers of quantum wells, and wave vectors. The diffusion-reaction equation is employed for calculating distributions of point defects in a layered structure. For completeness, the production rate for Frenkel-pair defects and their initial concentration are obtained based on atomic-level molecular-dynamics simulations. By combining the defect-effect, diffusion-reaction, and molecular-dynamics models with an available space-weather-forecast model, it will be possible in the future to enable specific designing for electronic and optoelectronic quantum devices that will be operated in space with radiation-hardening protection and, therefore, effectively extend the lifetime of these satellite onboard electronic and optoelectronic devices. Specifically, this theory can lead to a better characterization of quantum-well photodetectors not only for high quantum efficiency and low dark current density but also for radiation tolerance or mitigating the effects of the radiation.

Repetitive readout of a single electronic spin via quantum logic with nuclear spin ancillae.

Science.gov (United States)

Jiang, L; Hodges, J S; Maze, J R; Maurer, P; Taylor, J M; Cory, D G; Hemmer, P R; Walsworth, R L; Yacoby, A; Zibrov, A S; Lukin, M D

2009-10-09

Robust measurement of single quantum bits plays a key role in the realization of quantum computation and communication as well as in quantum metrology and sensing. We have implemented a method for the improved readout of single electronic spin qubits in solid-state systems. The method makes use of quantum logic operations on a system consisting of a single electronic spin and several proximal nuclear spin ancillae in order to repetitively readout the state of the electronic spin. Using coherent manipulation of a single nitrogen vacancy center in room-temperature diamond, full quantum control of an electronic-nuclear system consisting of up to three spins was achieved. We took advantage of a single nuclear-spin memory in order to obtain a 10-fold enhancement in the signal amplitude of the electronic spin readout. We also present a two-level, concatenated procedure to improve the readout by use of a pair of nuclear spin ancillae, an important step toward the realization of robust quantum information processors using electronic- and nuclear-spin qubits. Our technique can be used to improve the sensitivity and speed of spin-based nanoscale diamond magnetometers.

Atomistic theory of excitonic fine structure in InAs/InP nanowire quantum dot molecules

Science.gov (United States)

Świderski, M.; Zieliński, M.

2017-03-01

Nanowire quantum dots have peculiar electronic and optical properties. In this work we use atomistic tight binding to study excitonic spectra of artificial molecules formed by a double nanowire quantum dot. We demonstrate a key role of atomistic symmetry and nanowire substrate orientation rather than cylindrical shape symmetry of a nanowire and a molecule. In particular for [001 ] nanowire orientation we observe a nonvanishing bright exciton splitting for a quasimolecule formed by two cylindrical quantum dots of different heights. This effect is due to interdot coupling that effectively reduces the overall symmetry, whereas single uncoupled [001 ] quantum dots have zero fine structure splitting. We found that the same double quantum dot system grown on [111 ] nanowire reveals no excitonic fine structure for all considered quantum dot distances and individual quantum dot heights. Further we demonstrate a pronounced, by several orders of magnitude, increase of the dark exciton optical activity in a quantum dot molecule as compared to a single quantum dot. For [111 ] systems we also show spontaneous localization of single particle states in one of nominally identical quantum dots forming a molecule, which is mediated by strain and origins from the lack of the vertical inversion symmetry in [111 ] nanostructures of overall C3 v symmetry. Finally, we study lowering of symmetry due to alloy randomness that triggers nonzero excitonic fine structure and the dark exciton optical activity in realistic nanowire quantum dot molecules of intermixed composition.

On the quantum Landau collision operator and electron collisions in dense plasmas

Energy Technology Data Exchange (ETDEWEB)

Daligault, Jérôme, E-mail: daligaul@lanl.gov [Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

2016-03-15

The quantum Landau collision operator, which extends the widely used Landau/Fokker-Planck collision operator to include quantum statistical effects, is discussed. The quantum extension can serve as a reference model for including electron collisions in non-equilibrium dense plasmas, in which the quantum nature of electrons cannot be neglected. In this paper, the properties of the Landau collision operator that have been useful in traditional plasma kinetic theory and plasma transport theory are extended to the quantum case. We outline basic properties in connection with the conservation laws, the H-theorem, and the global and local equilibrium distributions. We discuss the Fokker-Planck form of the operator in terms of three potentials that extend the usual two Rosenbluth potentials. We establish practical closed-form expressions for these potentials under local thermal equilibrium conditions in terms of Fermi-Dirac and Bose-Einstein integrals. We study the properties of linearized quantum Landau operator, and extend two popular approximations used in plasma physics to include collisions in kinetic simulations. We apply the quantum Landau operator to the classic test-particle problem to illustrate the physical effects embodied in the quantum extension. We present useful closed-form expressions for the electron-ion momentum and energy transfer rates. Throughout the paper, similarities and differences between the quantum and classical Landau collision operators are emphasized.

On the quantum Landau collision operator and electron collisions in dense plasmas

Science.gov (United States)

Daligault, Jérôme

2016-03-01

The quantum Landau collision operator, which extends the widely used Landau/Fokker-Planck collision operator to include quantum statistical effects, is discussed. The quantum extension can serve as a reference model for including electron collisions in non-equilibrium dense plasmas, in which the quantum nature of electrons cannot be neglected. In this paper, the properties of the Landau collision operator that have been useful in traditional plasma kinetic theory and plasma transport theory are extended to the quantum case. We outline basic properties in connection with the conservation laws, the H-theorem, and the global and local equilibrium distributions. We discuss the Fokker-Planck form of the operator in terms of three potentials that extend the usual two Rosenbluth potentials. We establish practical closed-form expressions for these potentials under local thermal equilibrium conditions in terms of Fermi-Dirac and Bose-Einstein integrals. We study the properties of linearized quantum Landau operator, and extend two popular approximations used in plasma physics to include collisions in kinetic simulations. We apply the quantum Landau operator to the classic test-particle problem to illustrate the physical effects embodied in the quantum extension. We present useful closed-form expressions for the electron-ion momentum and energy transfer rates. Throughout the paper, similarities and differences between the quantum and classical Landau collision operators are emphasized.

Impact of Relativistic Electron Beam on Hole Acoustic Instability in Quantum Semiconductor Plasmas

Science.gov (United States)

Siddique, M.; Jamil, M.; Rasheed, A.; Areeb, F.; Javed, Asif; Sumera, P.

2018-01-01

We studied the influence of the classical relativistic beam of electrons on the hole acoustic wave (HAW) instability exciting in the semiconductor quantum plasmas. We conducted this study by using the quantum-hydrodynamic model of dense plasmas, incorporating the quantum effects of semiconductor plasma species which include degeneracy pressure, exchange-correlation potential and Bohm potential. Analysis of the quantum characteristics of semiconductor plasma species along with relativistic effect of beam electrons on the dispersion relation of the HAW is given in detail qualitatively and quantitatively by plotting them numerically. It is worth mentioning that the relativistic electron beam (REB) stabilises the HAWs exciting in semiconductor (GaAs) degenerate plasma.

Assessing the quantum physics impacts on future x-ray free-electron lasers

Energy Technology Data Exchange (ETDEWEB)

Schmitt, Mark J. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Anisimov, Petr Mikhaylovich [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

2017-10-06

A new quantum mechanical theory of x-ray free electron lasers (XFELs) has been successfully developed that has placed LANL at the forefront of the understanding of quantum effects in XFELs. Our quantum theory describes the interaction of relativistic electrons with x-ray radiation in the periodic magnetic field of an undulator using the same mathematical formalism as classical XFEL theory. This places classical and quantum treatments on the same footing and allows for a continuous transition from one regime to the other eliminating the disparate analytical approaches previously used. Moreover, Dr. Anisimov, the architect of this new theory, is now considered a resource in the international FEL community for assessing quantum effects in XFELs.

Enhanced carrier collection efficiency and reduced quantum state absorption by electron doping in self-assembled quantum dot solar cells

Energy Technology Data Exchange (ETDEWEB)

Li, Tian, E-mail: tianlee@umd.edu, E-mail: dage@ece.umd.edu; Dagenais, Mario, E-mail: tianlee@umd.edu, E-mail: dage@ece.umd.edu [Department of Electrical Engineering, University of Maryland, College Park, Maryland 20742 (United States); Lu, Haofeng; Fu, Lan; Tan, Hark Hoe; Jagadish, Chennupati [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200 (Australia)

2015-02-02

Reduced quantum dot (QD) absorption due to state filling effects and enhanced electron transport in doped QDs are demonstrated to play a key role in solar energy conversion. Reduced QD state absorption with increased n-doping is observed in the self-assembled In{sub 0.5}Ga{sub 0.5}As/GaAs QDs from high resolution below-bandgap external quantum efficiency (EQE) measurement, which is a direct consequence of the Pauli exclusion principle. We also show that besides partial filling of the quantum states, electron-doping produces negatively charged QDs that exert a repulsive Coulomb force on the mobile electrons, thus altering the electron trajectory and reducing the probability of electron capture, leading to an improved collection efficiency of photo-generated carriers, as indicated by an absolute above-bandgap EQE measurement. The resulting redistribution of the mobile electron in the planar direction is further validated by the observed photoluminescence intensity dependence on doping.

Quantum-classical transition in the electron dynamics of thin metal films

International Nuclear Information System (INIS)

Jasiak, R; Manfredi, G; Hervieux, P-A; Haefele, M

2009-01-01

The quantum electrons dynamics in a thin metal film is studied numerically using the self-consistent Wigner-Poisson equations. The initial equilibrium is computed from the Kohn-Sham equations at finite temperature, and then mapped into the phase-space Wigner function. The time-dependent results are compared systematically with those obtained previously with a classical approach (Vlasov-Poisson equations). It is found that, for large excitations, the quantum and classical dynamics display the same low-frequency oscillations due to ballistic electrons bouncing back and forth on the film surfaces. However, below a certain excitation energy (roughly corresponding to one quantum of plasmon energy ℎω p ), the quantum and classical results diverge, and the ballistic oscillations are no longer observed. These results provide an example of a quantum-classical transition that may be observed with current pump-probe experiments on thin metal films.

Designing quantum information processing via structural physical approximation.

Science.gov (United States)

Bae, Joonwoo

2017-10-01

In quantum information processing it may be possible to have efficient computation and secure communication beyond the limitations of classical systems. In a fundamental point of view, however, evolution of quantum systems by the laws of quantum mechanics is more restrictive than classical systems, identified to a specific form of dynamics, that is, unitary transformations and, consequently, positive and completely positive maps to subsystems. This also characterizes classes of disallowed transformations on quantum systems, among which positive but not completely maps are of particular interest as they characterize entangled states, a general resource in quantum information processing. Structural physical approximation offers a systematic way of approximating those non-physical maps, positive but not completely positive maps, with quantum channels. Since it has been proposed as a method of detecting entangled states, it has stimulated fundamental problems on classifications of positive maps and the structure of Hermitian operators and quantum states, as well as on quantum measurement such as quantum design in quantum information theory. It has developed efficient and feasible methods of directly detecting entangled states in practice, for which proof-of-principle experimental demonstrations have also been performed with photonic qubit states. Here, we present a comprehensive review on quantum information processing with structural physical approximations and the related progress. The review mainly focuses on properties of structural physical approximations and their applications toward practical information applications.

Time-dependent quantum chemistry of laser driven many-electron molecules

International Nuclear Information System (INIS)

Nguyen-Dang, Thanh-Tung; Couture-Bienvenue, Étienne; Viau-Trudel, Jérémy; Sainjon, Amaury

2014-01-01

A Time-Dependent Configuration Interaction approach using multiple Feshbach partitionings, corresponding to multiple ionization stages of a laser-driven molecule, has recently been proposed [T.-T. Nguyen-Dang and J. Viau-Trudel, J. Chem. Phys. 139, 244102 (2013)]. To complete this development toward a fully ab-initio method for the calculation of time-dependent electronic wavefunctions of an N-electron molecule, we describe how tools of multiconfiguration quantum chemistry such as the management of the configuration expansion space using Graphical Unitary Group Approach concepts can be profitably adapted to the new context, that of time-resolved electronic dynamics, as opposed to stationary electronic structure. The method is applied to calculate the detailed, sub-cycle electronic dynamics of BeH 2 , treated in a 3–21G bound-orbital basis augmented by a set of orthogonalized plane-waves representing continuum-type orbitals, including its ionization under an intense λ = 800 nm or λ = 80 nm continuous-wave laser field. The dynamics is strongly non-linear at the field-intensity considered (I ≃ 10 15 W/cm 2 ), featuring important ionization of an inner-shell electron and strong post-ionization bound-electron dynamics

Electronic properties of mesoscopic graphene structures: Charge confinement and control of spin and charge transport

Energy Technology Data Exchange (ETDEWEB)

Rozhkov, A.V., E-mail: arozhkov@gmail.co [Advanced Science Institute, RIKEN, Wako-shi, Saitama, 351-0198 (Japan); Institute for Theoretical and Applied Electrodynamics, Russian Academy of Sciences, 125412, Moscow (Russian Federation); Giavaras, G. [Advanced Science Institute, RIKEN, Wako-shi, Saitama, 351-0198 (Japan); Bliokh, Yury P. [Advanced Science Institute, RIKEN, Wako-shi, Saitama, 351-0198 (Japan); Department of Physics, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Freilikher, Valentin [Advanced Science Institute, RIKEN, Wako-shi, Saitama, 351-0198 (Japan); Department of Physics, Bar-Ilan University, Ramat-Gan 52900 (Israel); Nori, Franco [Advanced Science Institute, RIKEN, Wako-shi, Saitama, 351-0198 (Japan); Department of Physics, University of Michigan, Ann Arbor, MI 48109-1040 (United States)

2011-06-15

This brief review discusses electronic properties of mesoscopic graphene-based structures. These allow controlling the confinement and transport of charge and spin; thus, they are of interest not only for fundamental research, but also for applications. The graphene-related topics covered here are: edges, nanoribbons, quantum dots, pn-junctions, pnp-structures, and quantum barriers and waveguides. This review is partly intended as a short introduction to graphene mesoscopics.

Contactless measurement of alternating current conductance in quantum Hall structures

Energy Technology Data Exchange (ETDEWEB)

Drichko, I. L.; Diakonov, A. M.; Malysh, V. A.; Smirnov, I. Yu.; Ilyinskaya, N. D.; Usikova, A. A. [A. F. Ioffe Physical-Technical Institute of the Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Galperin, Y. M. [Department of Physics, University of Oslo, P.O. Box 1048 Blindern, 0316 Oslo (Norway); A. F. Ioffe Physical-Technical Institute of the Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Kummer, M.; Känel, H. von [Laboratorium für Festkörperphysik ETH Zürich, CH-8093 Zürich (Switzerland)

2014-10-21

We report a procedure to determine the frequency-dependent conductance of quantum Hall structures in a broad frequency domain. The procedure is based on the combination of two known probeless methods—acoustic spectroscopy and microwave spectroscopy. By using the acoustic spectroscopy, we study the low-frequency attenuation and phase shift of a surface acoustic wave in a piezoelectric crystal in the vicinity of the electron (hole) layer. The electronic contribution is resolved using its dependence on a transverse magnetic field. At high frequencies, we study the attenuation of an electromagnetic wave in a coplanar waveguide. To quantitatively calibrate these data, we use the fact that in the quantum-Hall-effect regime the conductance at the maxima of its magnetic field dependence is determined by extended states. Therefore, it should be frequency independent in a broad frequency domain. The procedure is verified by studies of a well-characterized p-SiGe/Ge/SiGe heterostructure.

Path integrals for electronic densities, reactivity indices, and localization functions in quantum systems.

Science.gov (United States)

Putz, Mihai V

2009-11-10

The density matrix theory, the ancestor of density functional theory, provides the immediate framework for Path Integral (PI) development, allowing the canonical density be extended for the many-electronic systems through the density functional closure relationship. Yet, the use of path integral formalism for electronic density prescription presents several advantages: assures the inner quantum mechanical description of the system by parameterized paths; averages the quantum fluctuations; behaves as the propagator for time-space evolution of quantum information; resembles Schrödinger equation; allows quantum statistical description of the system through partition function computing. In this framework, four levels of path integral formalism were presented: the Feynman quantum mechanical, the semiclassical, the Feynman-Kleinert effective classical, and the Fokker-Planck non-equilibrium ones. In each case the density matrix or/and the canonical density were rigorously defined and presented. The practical specializations for quantum free and harmonic motions, for statistical high and low temperature limits, the smearing justification for the Bohr's quantum stability postulate with the paradigmatic Hydrogen atomic excursion, along the quantum chemical calculation of semiclassical electronegativity and hardness, of chemical action and Mulliken electronegativity, as well as by the Markovian generalizations of Becke-Edgecombe electronic focalization functions - all advocate for the reliability of assuming PI formalism of quantum mechanics as a versatile one, suited for analytically and/or computationally modeling of a variety of fundamental physical and chemical reactivity concepts characterizing the (density driving) many-electronic systems.

Path Integrals for Electronic Densities, Reactivity Indices, and Localization Functions in Quantum Systems

Directory of Open Access Journals (Sweden)

Mihai V. Putz

2009-11-01

Full Text Available The density matrix theory, the ancestor of density functional theory, provides the immediate framework for Path Integral (PI development, allowing the canonical density be extended for the many-electronic systems through the density functional closure relationship. Yet, the use of path integral formalism for electronic density prescription presents several advantages: assures the inner quantum mechanical description of the system by parameterized paths; averages the quantum fluctuations; behaves as the propagator for time-space evolution of quantum information; resembles Schrödinger equation; allows quantum statistical description of the system through partition function computing. In this framework, four levels of path integral formalism were presented: the Feynman quantum mechanical, the semiclassical, the Feynman-Kleinert effective classical, and the Fokker-Planck non-equilibrium ones. In each case the density matrix or/and the canonical density were rigorously defined and presented. The practical specializations for quantum free and harmonic motions, for statistical high and low temperature limits, the smearing justification for the Bohr’s quantum stability postulate with the paradigmatic Hydrogen atomic excursion, along the quantum chemical calculation of semiclassical electronegativity and hardness, of chemical action and Mulliken electronegativity, as well as by the Markovian generalizations of Becke-Edgecombe electronic focalization functions – all advocate for the reliability of assuming PI formalism of quantum mechanics as a versatile one, suited for analytically and/or computationally modeling of a variety of fundamental physical and chemical reactivity concepts characterizing the (density driving many-electronic systems.

Excitons formed from spatially separated electrons and holes in Ge/Si geterostructures with Ge quantum dots

International Nuclear Information System (INIS)

Pokutnyj, S.I.

2016-01-01

The effect of a significant increase in the exciton binding energy of space-separated electrons and holes (hole moves in the volume of the quantum dot, and the electron is localized on a spherical surface section quantum dot-matrix) in nanosystems containing germanium quantum dots grown in a matrix of silicon by compared with the binding energy of an exciton in a silicon single crystal. It was found that in such nanosystems in the conduction band silicon matrix is first a zone of states of electron-hole pairs, which with increasing radius of the quantum dot becomes a zone of exciton states, located in the band gap of silicon matrix. It is shown that the mechanism of light absorption in nanosystems due to transitions between quantum-electron levels of the electron-hole pairs, as well as the electron transitions between quantum-exciton levels.

Demonstration of quantum entanglement between a single electron spin confined to an InAs quantum dot and a photon.

Science.gov (United States)

Schaibley, J R; Burgers, A P; McCracken, G A; Duan, L-M; Berman, P R; Steel, D G; Bracker, A S; Gammon, D; Sham, L J

2013-04-19

The electron spin state of a singly charged semiconductor quantum dot has been shown to form a suitable single qubit for quantum computing architectures with fast gate times. A key challenge in realizing a useful quantum dot quantum computing architecture lies in demonstrating the ability to scale the system to many qubits. In this Letter, we report an all optical experimental demonstration of quantum entanglement between a single electron spin confined to a single charged semiconductor quantum dot and the polarization state of a photon spontaneously emitted from the quantum dot's excited state. We obtain a lower bound on the fidelity of entanglement of 0.59±0.04, which is 84% of the maximum achievable given the timing resolution of available single photon detectors. In future applications, such as measurement-based spin-spin entanglement which does not require sub-nanosecond timing resolution, we estimate that this system would enable near ideal performance. The inferred (usable) entanglement generation rate is 3×10(3) s(-1). This spin-photon entanglement is the first step to a scalable quantum dot quantum computing architecture relying on photon (flying) qubits to mediate entanglement between distant nodes of a quantum dot network.

Molecular structure of tris(cyclopropylsilyl)amine as determined by gas electron diffraction and quantum-chemical calculations

Science.gov (United States)

Vishnevskiy, Yuri V.; Abaev, Maxim A.; Ivanov, Arkadii A.; Vilkov, Lev V.; Dakkouri, Marwan

2008-10-01

The molecular structure and conformation of tris(cyclopropylsilyl)amine (TCPSA) has been studied by means of gas-phase electron diffraction at 338 K and quantum-chemical calculations. A total of 12 relatively stable conformations of TCPSA molecule were considered. According to the experimental results and the DFT calculations the most stable conformer corresponds to a configuration (according to the Prelog-Klyne notation) of the type (-ac)(-ac)(+ac)-(-ac)(-ac)(+ac), where the first three parentheses describe the three different Si-N-Si-C torsional angles and the latter ones depict the rotation of the three cyclopropyl groups about the C ring-Si axes, respectively. The quantum-mechanical calculations were performed using various density functional (B3LYP, X3LYP and O3LYP) and perturbation MP2 methods in combination with double- and triple- ζ basis sets plus polarization and diffuse functions. The most important experimental geometrical parameters of TCPSA ( ra Å, ∠ h1 degrees) are: (Si-N) av = 1.741(3), (Si-C) av = 1.866(4), (C-C) av = 1.510(3), (C-C(Si)) av = 1.535(3), (N-Si-C) av = 115.1(18)°. For the purpose of comparison and searching for reasons leading to the planarity of the Si 3N moiety in trisilylated amines we carried out NBO analysis and optimized the geometries of numerous silylamines. Among these compounds was tris(allylsilyl)amine (TASA), which is isovalent and isoelectronic to TCPSA. Utilizing the structural results we obtained we could show that Si +⋯Si + electrostatic repulsive interaction is predominantly responsible for the planarity of the Si 3N skeleton in TCPSA and in all other trisilylamines we considered. We also found that regardless the size and partial charges of the substituents the Si-N-Si bond angle in various disilylamines amounts to 130 ± 2°.

Quantum laws of the microworld and the wealth of macroscopic structures

International Nuclear Information System (INIS)

Noga, M.

2000-01-01

The reasons are highlighted why classical physics was unable to explain the formation of any collective self-organized arrangement such as magnetism and how the wealth of macroscopic self-organized structures emerges spontaneously from quantum theory applied to the given physical system. This is demonstrated on the simplest multi-electron system, viz. the model of a metal as electron gas with Coulomb interaction with a background of homogeneously distributed positive charge possessing a constant density so as to ensure charge neutrality of the system

Signatures of quantum radiation reaction in laser-electron-beam collisions

International Nuclear Information System (INIS)

Wang, H. Y.; Yan, X. Q.; Zepf, M.

2015-01-01

Electron dynamics in the collision of an electron beam with a high-intensity focused ultrashort laser pulse are investigated using three-dimensional QED particle-in-cell (PIC) simulations, and the results are compared with those calculated by classical Landau and Lifshitz PIC simulations. Significant differences are observed from the angular dependence of the electron energy distribution patterns for the two different approaches, because photon emission is no longer well approximated by a continuous process in the quantum radiation-dominated regime. The stochastic nature of photon emission results in strong signatures of quantum radiation-reaction effects under certain conditions. We show that the laser spot size and duration greatly influence these signatures due to the competition of QED effects and the ponderomotive force, which is well described in the classical approximation. The clearest signatures of quantum radiation reaction are found in the limit of large laser spots and few cycle pulse durations

Band Structure and Quantum Confined Stark Effect in InN/GaN superlattices

DEFF Research Database (Denmark)

Gorczyca, I.; Suski, T.; Christensen, Niels Egede

2012-01-01

InN/GaN superlattices offer an important way of band gap engineering in the blue-green range of the spectrum. This approach represents a more controlled method than the band gap tuning in quantum well systems by application of InGaN alloys. The electronic structures of short-period wurtzite InN/G...... wells and barriers one may tune band gaps over a wide spectral range, which provides flexibility in band gap engineering.......InN/GaN superlattices offer an important way of band gap engineering in the blue-green range of the spectrum. This approach represents a more controlled method than the band gap tuning in quantum well systems by application of InGaN alloys. The electronic structures of short-period wurtzite In......N/GaN(0001) superlattices are investigated, and the variation of the band gap with the thicknesses of the well and the barrier is discussed. Superlattices of the form mInN/nGaN with n ≥ m are simulated using band structure calculations in the Local Density Approximation with a semiempirical correction...

QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials.

Science.gov (United States)

Giannozzi, Paolo; Baroni, Stefano; Bonini, Nicola; Calandra, Matteo; Car, Roberto; Cavazzoni, Carlo; Ceresoli, Davide; Chiarotti, Guido L; Cococcioni, Matteo; Dabo, Ismaila; Dal Corso, Andrea; de Gironcoli, Stefano; Fabris, Stefano; Fratesi, Guido; Gebauer, Ralph; Gerstmann, Uwe; Gougoussis, Christos; Kokalj, Anton; Lazzeri, Michele; Martin-Samos, Layla; Marzari, Nicola; Mauri, Francesco; Mazzarello, Riccardo; Paolini, Stefano; Pasquarello, Alfredo; Paulatto, Lorenzo; Sbraccia, Carlo; Scandolo, Sandro; Sclauzero, Gabriele; Seitsonen, Ari P; Smogunov, Alexander; Umari, Paolo; Wentzcovitch, Renata M

2009-09-30

QUANTUM ESPRESSO is an integrated suite of computer codes for electronic-structure calculations and materials modeling, based on density-functional theory, plane waves, and pseudopotentials (norm-conserving, ultrasoft, and projector-augmented wave). The acronym ESPRESSO stands for opEn Source Package for Research in Electronic Structure, Simulation, and Optimization. It is freely available to researchers around the world under the terms of the GNU General Public License. QUANTUM ESPRESSO builds upon newly-restructured electronic-structure codes that have been developed and tested by some of the original authors of novel electronic-structure algorithms and applied in the last twenty years by some of the leading materials modeling groups worldwide. Innovation and efficiency are still its main focus, with special attention paid to massively parallel architectures, and a great effort being devoted to user friendliness. QUANTUM ESPRESSO is evolving towards a distribution of independent and interoperable codes in the spirit of an open-source project, where researchers active in the field of electronic-structure calculations are encouraged to participate in the project by contributing their own codes or by implementing their own ideas into existing codes.

Electron flux during pericyclic reactions in the tunneling limit: Quantum simulation for cyclooctatetraene

International Nuclear Information System (INIS)

Hege, Hans-Christian; Manz, Joern; Marquardt, Falko; Paulus, Beate; Schild, Axel

2010-01-01

Graphical abstract: In the limit of coherent tunneling, double bond shifting (DBS) of cyclooctatetraene from a reactant (R) to a product (P) is associated with pericyclic electron fluxes from double to single bonds, corresponding to a pincer-motion-type set of arrows in the Lewis structures, each representing a transfer of 0.19 electrons. - Abstract: Pericyclic rearrangement of cyclooctatetraene proceeds from equivalent sets of two reactants to two products. In the ideal limit of coherent tunneling, these reactants and products may tunnel to each other by ring inversions and by double bond shifting (DBS). We derive simple cosinusoidal or sinusoidal time evolutions of the bond-to-bond electron fluxes and yields during DBS, for the tunneling scenario. These overall yields and fluxes may be decomposed into various contributions for electrons in so called pericyclic, other valence, and core orbitals. Pericyclic orbitals are defined as the subset of valence orbitals which describe the changes of Lewis structures during the pericyclic reaction. The quantum dynamical results are compared with the traditional scheme of fluxes of electrons in pericyclic orbitals, as provided by arrows in Lewis structures.

Dynamics of Quantum Causal Structures

Directory of Open Access Journals (Sweden)

Esteban Castro-Ruiz

2018-03-01

Full Text Available It was recently suggested that causal structures are both dynamical, because of general relativity, and indefinite, because of quantum theory. The process matrix formalism furnishes a framework for quantum mechanics on indefinite causal structures, where the order between operations of local laboratories is not definite (e.g., one cannot say whether operation in laboratory A occurs before or after operation in laboratory B. Here, we develop a framework for “dynamics of causal structures,” i.e., for transformations of process matrices into process matrices. We show that, under continuous and reversible transformations, the causal order between operations is always preserved. However, the causal order between a subset of operations can be changed under continuous yet nonreversible transformations. An explicit example is that of the quantum switch, where a party in the past affects the causal order of operations of future parties, leading to a transition from a channel from A to B, via superposition of causal orders, to a channel from B to A. We generalize our framework to construct a hierarchy of quantum maps based on transformations of process matrices and transformations thereof.

Electron Spin Optical Orientation in Charged Quantum Dots

Science.gov (United States)

Shabaev, A.; Gershoni, D.; Korenev, V. L.

2005-03-01

We present a theory of nonresonant optical orientation of electron spins localized in quantum dots. This theory explains the negative circularly polarized photoluminescence of singlet trions localized in quantum dots previously observed in experiments where trion polarization changed to negative with time and where the degree of the negative polarization increased with intensity of pumping light. We have shown that this effect can be explained by the accumulation of dark excitons that occurs due to the spin blocking of the singlet trion formation - the major mechanism of dark exciton recombination. The accumulation of dark excitons results from a lack of electrons with a spin matching the exciton polarization. The electron spin lifetime is shortened by a transverse magnetic field or a temperature increase. This takes the block off the dark exciton recombination and restores the positive degree of trion polarization. The presented theory gives good agreement with experimental data.

Structured electron beams from nano-engineered cathodes

Energy Technology Data Exchange (ETDEWEB)

Lueangaramwong, A. [NICADD, DeKalb; Mihalcea, D. [NICADD, DeKalb; Andonian, G. [RadiaBeam Tech.; Piot, P. [Fermilab

2017-03-07

The ability to engineer cathodes at the nano-scale have open new possibilities such as enhancing quantum eciency via surface-plasmon excitation, forming ultra-low-emittance beams, or producing structured electron beams. In this paper we present numerical investigations of the beam dynamics associated to this class of cathode in the weak- and strong-field regimes.We finally discuss the possible applications of some of the achievable cathode patterns when coupled with other phase space manipulations.

Electron confinement in quantum nanostructures: Self-consistent Poisson-Schroedinger theory

International Nuclear Information System (INIS)

Luscombe, J.H.; Bouchard, A.M.; Luban, M.

1992-01-01

We compute the self-consistent electron states and confining potential, V(r,T), for laterally confined cylindrical quantum wires at a temperature T from a numerical solution of the coupled Poisson and Schroedinger (PS) equations. Finite-temperature effects are included in the electron density function, n(r,T), via the single-particle density matrix in the grand-canonical ensemble using the self-consistent bound states. We compare our results for a GaAs quantum wire with those obtained previously [J. H. Luscombe and M. Luban, Appl. Phys. Lett. 57, 61 (1990)] from a finite-temperature Thomas-Fermi (TF) approximation. We find that the TF results agree well with those of the more realistic, but also more computationally intensive PS theory, except for low temperatures or for cases where the quantum wire is almost, but not totally, depleted due to a combination of either small geometry, surface boundary conditions, or low doping concentrations. In the latter situations, the number of subbands that are populated is relatively small, and both n(r,T) and V(r,T) exhibit Friedel-type oscillations. Otherwise the TF theory, which is based on free-particle states, is remarkably accurate. We also present results for the partial electron density functions associated with the angular momentum quantum numbers, and discuss their role in populating the quantum wire

Electronic structure and Landé g-factor of a quantum ring in the presence of spin-orbit coupling: Temperature and Zeeman effect

Science.gov (United States)

Zamani, A.; Setareh, F.; Azargoshasb, T.; Niknam, E.

2017-10-01

A wide variety of semiconductor nanostructures have been fabricated experimentally and both theoretical and experimental investigations of their features imply the great role they have in new generation technological devices. However, mathematical modeling provide a powerful means due to definitive goal of predicting the features and understanding of such structures behavior under different circumstances. Therefore, effective Hamiltonian for an electron in a quantum ring with axial symmetry in the presence of both Rashba and Dresselhaus spin-orbit interactions (SOI) is derived. Here we report our study of the electronic structure and electron g-factor in the presence of spin-orbit (SO) couplings under the influence of external magnetic field at finite temperature. This investigation shows that, when Rashba and Dresselhaus couplings are simultaneously present, the degeneracy is removed and energy levels split into two branches. Furthermore, with enhancing the applied magnetic field, separation of former degenerate levels increases and also avoided crossings (anti-crossing) in the energy spectra is detected. It is also discussed how the energy levels of the system can be adjusted with variation of temperature as well as the magnetic field and geometrical sizes.

FIRST EXPERIMENTAL RESULTS FROM DEGAS, THE QUANTUM LIMITED BRIGHTNESS ELECTRON SOURCE

International Nuclear Information System (INIS)

Zolotorev, Max S.; Commins, Eugene D.; Oneill, James; Sannibale, Fernando; Tremsin, Anton; Wan, Weishi

2008-01-01

The construction of DEGAS (DEGenerate Advanced Source), a proof of principle for a quantum limited brightness electron source, has been completed at the Lawrence Berkeley National Laboratory. The commissioning and the characterization of this source, designed to generate coherent single electron 'bunches' with brightness approaching the quantum limit at a repetition rate of few MHz, has been started. In this paper the first experimental results are described

From quantum dots to quantum circuits

International Nuclear Information System (INIS)

Ensslin, K.

2008-01-01

Full text: Quantum dots, or artificial atoms, confine charge carriers in three-dimensional islands in a semiconductor environment. Detailed understanding and exquisite control of the charge and spin state of the electrically tunable charge occupancy have been demonstrated over the years. Quantum dots with best quality for transport experiments are usually realized in n-type AlGaAs/GaAs heterostructures. Novel material systems, such as graphene, nanowires and p-type heterostructures offer unexplored parameter regimes in view of spin-orbit interactions, carrier-carrier interactions and hyperfine coupling between electron and nuclear spins, which might be relevant for future spin qubits realized in quantum dots. With more sophisticated nanotechnology it has become possible to fabricate coupled quantum systems where classical and quantum mechanical coupling and back action is experimentally investigated. A narrow constriction, or quantum point contact, in vicinity to a quantum dot has been shown to serve as a minimally invasive sensor of the charge state of the dot. If charge transport through the quantum dot is slow enough (kHz), the charge sensor allows the detection of time-resolved transport through quantum-confined structures. This has allowed us to measure extremely small currents not detectable with conventional electronics. In addition the full statistics of current fluctuations becomes experimentally accessible. This way correlations between electrons which influence the current flow can be analyzed by measuring the noise and higher moments of the distribution of current fluctuations. Mesoscopic conductors driven out of equilibrium can emit photons which may be detected by another nearby quantum system with suitably tuned energy levels. This way an on-chip microwave single photon detector has been realized. In a ring geometry containing a tunable double quantum dot it has been possible to measure the self-interference of individual electrons as they traverse

Quantum-classical transition in the electron dynamics of thin metal films

Energy Technology Data Exchange (ETDEWEB)

Jasiak, R; Manfredi, G; Hervieux, P-A [Institut de Physique et Chimie des Materiaux, CNRS and Universite de Strasbourg, BP 43, F-67034 Strasbourg (France); Haefele, M [INRIA Nancy Grand-Est and Institut de Recherche en Mathematiques Avancees, 7 rue Rene Descartes, F-67084 Strasbourg (France)], E-mail: Giovanni.Manfredi@ipcms.u-strasbg.fr

2009-06-15

The quantum electrons dynamics in a thin metal film is studied numerically using the self-consistent Wigner-Poisson equations. The initial equilibrium is computed from the Kohn-Sham equations at finite temperature, and then mapped into the phase-space Wigner function. The time-dependent results are compared systematically with those obtained previously with a classical approach (Vlasov-Poisson equations). It is found that, for large excitations, the quantum and classical dynamics display the same low-frequency oscillations due to ballistic electrons bouncing back and forth on the film surfaces. However, below a certain excitation energy (roughly corresponding to one quantum of plasmon energy {Dirac_h}{omega}{sub p}), the quantum and classical results diverge, and the ballistic oscillations are no longer observed. These results provide an example of a quantum-classical transition that may be observed with current pump-probe experiments on thin metal films.

High-fidelity quantum gates on quantum-dot-confined electron spins in low-Q optical microcavities

Science.gov (United States)

Li, Tao; Gao, Jian-Cun; Deng, Fu-Guo; Long, Gui-Lu

2018-04-01

We propose some high-fidelity quantum circuits for quantum computing on electron spins of quantum dots (QD) embedded in low-Q optical microcavities, including the two-qubit controlled-NOT gate and the multiple-target-qubit controlled-NOT gate. The fidelities of both quantum gates can, in principle, be robust to imperfections involved in a practical input-output process of a single photon by converting the infidelity into a heralded error. Furthermore, the influence of two different decay channels is detailed. By decreasing the quality factor of the present microcavity, we can largely increase the efficiencies of these quantum gates while their high fidelities remain unaffected. This proposal also has another advantage regarding its experimental feasibility, in that both quantum gates can work faithfully even when the QD-cavity systems are non-identical, which is of particular importance in current semiconductor QD technology.

Electron self-trapping at quantum and classical critical points

NARCIS (Netherlands)

Auslender, M.I.; Katsnelson, M.I.

2006-01-01

Using Feynman path integral technique estimations of the ground state energy have been found for a conduction electron interacting with order parameter fluctuations near quantum critical points. In some cases only singular perturbation theory in the coupling constant emerges for the electron ground

Plexciton quenching by resonant electron transfer from quantum emitter to metallic nanoantenna.

Science.gov (United States)

Marinica, D C; Lourenço-Martins, H; Aizpurua, J; Borisov, A G

2013-01-01

Coupling molecular excitons and localized surface plasmons in hybrid nanostructures leads to appealing, tunable optical properties. In this respect, the knowledge about the excitation dynamics of a quantum emitter close to a plasmonic nanoantenna is of importance from fundamental and practical points of view. We address here the effect of the excited electron tunneling from the emitter into a metallic nanoparticle(s) in the optical response. When close to a plasmonic nanoparticle, the excited state localized on a quantum emitter becomes short-lived because of the electronic coupling with metal conduction band states. We show that as a consequence, the characteristic features associated with the quantum emitter disappear from the optical absorption spectrum. Thus, for the hybrid nanostructure studied here and comprising quantum emitter in the narrow gap of a plasmonic dimer nanoantenna, the quantum tunneling might quench the plexcitonic states. Under certain conditions the optical response of the system approaches that of the individual plasmonic dimer. Excitation decay via resonant electron transfer can play an important role in many situations of interest such as in surface-enhanced spectroscopies, photovoltaics, catalysis, or quantum information, among others.

Electron transport and coherence in semiconductor quantum dots and rings

NARCIS (Netherlands)

Van der Wiel, W.G.

2002-01-01

A number of experiments on electron transport and coherence in semiconductor vertical and lateral quantum dots and semiconductor rings is described. Quantum dots are often referred to as "artificial atoms", because of their similarities with real atoms. Examples of such atom-like properties that

Conductance in double quantum well systems

International Nuclear Information System (INIS)

Hasbun, J E

2003-01-01

The object of this paper is to review the electronic conductance in double quantum well systems. These are quantum well structures in which electrons are confined in the z direction by large band gap material barrier layers, yet form a free two-dimensional Fermi gas within the sandwiched low band gap material layers in the x-y plane. Aspects related to the conductance in addition to the research progress made since the inception of such systems are included. While the review focuses on the tunnelling conductance properties of double quantum well devices, the longitudinal conductance is also discussed. Double quantum well systems are a more recent generation of structures whose precursors are the well known double-barrier resonant tunnelling systems. Thus, they have electronic signatures such as negative differential resistance, in addition to resonant tunnelling, whose behaviours depend on the wavefunction coupling between the quantum wells. As such, the barrier which separates the quantum wells can be tailored in order to provide better control of the device's electronic properties over their single well ancestors. (topical review)

Single electron probes of fractional quantum hall states

Science.gov (United States)

Venkatachalam, Vivek

electrometer, we measure the local charge of the nu = 5/2 FQH state. An immediate consequence of measuring fractionally quantized conductance plateaus is that the charge of local excitations should be a fraction of e, the charge of an electron. The simplest charge that would be expected at nu = 5/2 would e/2. However, if the charged particles that condense into the nu = 5/2 FQH state are paired, the expected local charge becomes e/4. By watching these local charges being added to compressible puddles at nu = 5/2 and nu = 7/3, we find that the local charge at nu = 5/2 is indeed e/4, indicating that objects of charge e are pairing to form the ground state of the system. This has implications for the future possibility of detecting non-Abelian braiding statistics in this state, and is described in detail in Chapter 2. By further monitoring how eagerly these e/4 particles enter puddles as we increase the temperature, we can attempt to identify the presence of some excess entropy related to an unconventional degeneracy of their ground state. Such an entropy would be expected if the nu = 5/2 state exhibited non-Abelian braiding statistics. Progress on these experiments and prospects for building a quantum computer are presented in Chapter 3. Next, by operating the SET as a thermometer, we monitor heat flow along the compressible edge and through the bulk of IQH and FQH states. As an edge is heated and charge on that edge is swept downstream by the external magnetic field, we expect that charge to carry the injected energy in the same downstream direction. However, for certain FQH states, this is not the case. By heating an edge with a quantum point contact (QPC) and monitoring the heat transported upstream and downstream, we find that heat can be transported upstream when the edge contains structure related to nu = 2/3 FQH physics. Surprisingly, this can be present even when the bulk is in a conventional insulating (IQH) state. Additionally, we unexpectedly find that the nu = 1 bulk

The Relation between Structure and Quantum Interference in Single Molecule Junctions

DEFF Research Database (Denmark)

Markussen, Troels; Stadler, Robert; Thygesen, Kristian Sommer

2010-01-01

Quantum interference (QI) of electron pathways has recently attracted increased interest as an enabling tool for single-molecule electronic devices. Although various molecular systems have been shown to exhibit QI effects and a number of methods have been proposed for its analysis, simple...... guidelines linking the molecular structure to QI effects in the phase-coherent transport regime have until now been lacking. In the present work we demonstrate that QI in aromatic molecules is intimately related to the topology of the molecule’s π system and establish a simple graphical scheme to predict...

Correlation effects in two-dimensional electron systems realized in quantum well structures and on the surface of liquid helium

International Nuclear Information System (INIS)

Vilk, Y.M.

1992-01-01

This thesis is concerned with theoretical studies of various manybody correlation effects in two-dimensional electron systems, with application to electrons in quantum well structures (QW) and electrons on the surface of liquid helium. The author investigates the influence of correlation effects on escape rates of electrons from the 2D electron liquid and crystal on the helium surface. Within the framework of a harmonic lattice model the effective potential for the escaping electron as a function of the electron density and the external pressing or pulling electric field is found. This approach takes into account the deformation effects in the electron system. It is shown that under realistic experimental conditions the correlation correction can completely dominate the physics of the escaping electrons. The calculated concentration dependence of the escape rate of surface electrons is in excellent agreement with experiments in both thermal-activated and tunneling regimes. The thesis describes studies of the optical luminescence spectra of two types of magnetoplasma realized in QW: a charged electron plasma and a neutral electron-hole plasma, in the context of a mean field approximation. It is shown that strong enhancements in oscillator strengths are associated with excitons between different Landau levels. The strongest effect is found near the chemical potential and is analogous to the x-ray singularities well known in metals. The theory also predicts the existence of plateaus in the concentration dependence of transition energies in the sufficiently strong magnetic field. These plateaus are associated with the change in the filling factor: at the strongest field, while the filling of the level is varied, the transition energy between Landau levels i e - i h (i e = i h = i) remains constant. With decreasing magnetic fields, the plateau disappears and the transition energy increases with the filling of the Landau level

Electronic Structures of LNA Phosphorothioate Oligonucleotides

Directory of Open Access Journals (Sweden)

Henrik G. Bohr

2017-09-01

Full Text Available Important oligonucleotides in anti-sense research have been investigated in silico and experimentally. This involves quantum mechanical (QM calculations and chromatography experiments on locked nucleic acid (LNA phosphorothioate (PS oligonucleotides. iso-potential electrostatic surfaces are essential in this study and have been calculated from the wave functions derived from the QM calculations that provide binding information and other properties of these molecules. The QM calculations give details of the electronic structures in terms of e.g., energy and bonding, which make them distinguish or differentiate between the individual PS diastereoisomers determined by the position of sulfur atoms. Rules are derived from the electronic calculations of these molecules and include the effects of the phosphorothioate chirality and formation of electrostatic potential surfaces. Physical and electrochemical descriptors of the PS oligonucleotides are compared to the experiments in which chiral states on these molecules can be distinguished. The calculations demonstrate that electronic structure, electrostatic potential, and topology are highly sensitive to single PS configuration changes and can give a lead to understanding the activity of the molecules. Keywords: LNA phosphorothioate, DNA/LNA oligonucleotide, diastereoisomers, Hartree-Fock calculations, iso-potential surface, anion chromatograms

Direct Observation of Electron-to-Hole Energy Transfer in CdSe Quantum Dots

NARCIS (Netherlands)

Hendry, E.; Koeberg, M.; Wang, F.; Zhang, H.; de Mello Donega, C.; Vanmaekelbergh, D.; Bonn, M.

2006-01-01

We independently determine the subpicosecond cooling rates for holes and electrons in CdSe quantum dots. Time-resolved luminescence and terahertz spectroscopy reveal that the rate of hole cooling, following photoexcitation of the quantum dots, depends critically on the electron excess energy. This

Irregular Aharonov–Bohm effect for interacting electrons in a ZnO quantum ring

International Nuclear Information System (INIS)

Chakraborty, Tapash; Manaselyan, Aram; Barseghyan, Manuk

2017-01-01

The electronic states and optical transitions of a ZnO quantum ring containing few interacting electrons in an applied magnetic field are found to be very different from those in a conventional semiconductor system, such as a GaAs ring. The strong Zeeman interaction and the Coulomb interaction of the ZnO system, two important characteristics of the electron system in ZnO, exert a profound influence on the electron states and on the optical properties of the ring. In particular, our results indicate that the Aharonov–Bohm (AB) effect in a ZnO quantum ring strongly depends on the electron number. In fact, for two electrons in the ZnO ring, the AB oscillations become aperiodic, while for three electrons (interacting) the AB oscillations completely disappear. Therefore, unlike in conventional quantum ring topology, here the AB effect (and the resulting persistent current) can be controlled by varying the electron number. (paper)

Geometric phase and quantum interference in photosynthetic reaction center: Regulation of electron transfer

Energy Technology Data Exchange (ETDEWEB)

Sun, Yuming, E-mail: ymsun@ytu.edu.cn; Su, Yuehua; Dai, Zhenhong; Wang, WeiTian

2016-10-20

Photosynthesis is driven by electron transfer in reaction centers in which the functional unit is composed of several simple molecules C{sub 2}-symmetrically arranged into two branches. In view of quantum mechanism, both branches are possible pathways traversed by the transferred electron. Due to different evolution of spin state along two pathways in transmembrane electric potential (TEP), quantum state of the transferred electron at the bridged site acquires a geometric phase difference dependent on TEP, the most efficient electron transport takes place in a specific range of TEP beyond which electron transfer is dramatically suppressed. What’s more, reaction center acts like elaborately designed quantum device preparing polarized spin dependent on TEP for the transferred electron to regulate the reduction potential at bridged site. In brief, electron transfer generates the TEP, reversely, TEP modulates the efficiency of electron transfer. This may be an important approach to maintaining an appreciable pH environment in photosynthesis.

The effect of quantum correction on plasma electron heating in ultraviolet laser interaction

Energy Technology Data Exchange (ETDEWEB)

Zare, S.; Sadighi-Bonabi, R., E-mail: Sadighi@sharif.ir; Anvari, A. [Department of Physics, Sharif University of Technology, P.O. Box 11365-9567, Tehran (Iran, Islamic Republic of); Yazdani, E. [Department of Energy Engineering and Physics, Amirkabir University of Technology, P.O. Box 15875-4413, Tehran (Iran, Islamic Republic of); Hora, H. [Department of Theoretical Physics, University of New South Wales, Sydney 2052 (Australia)

2015-04-14

The interaction of the sub-picosecond UV laser in sub-relativistic intensities with deuterium is investigated. At high plasma temperatures, based on the quantum correction in the collision frequency, the electron heating and the ion block generation in plasma are studied. It is found that due to the quantum correction, the electron heating increases considerably and the electron temperature uniformly reaches up to the maximum value of 4.91 × 10{sup 7 }K. Considering the quantum correction, the electron temperature at the laser initial coupling stage is improved more than 66.55% of the amount achieved in the classical model. As a consequence, by the modified collision frequency, the ion block is accelerated quicker with higher maximum velocity in comparison with the one by the classical collision frequency. This study proves the necessity of considering a quantum mechanical correction in the collision frequency at high plasma temperatures.

Structural and optical characteristics of InN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition

International Nuclear Information System (INIS)

Kim, Je Won; Lee, Kyu Han; Hong, Sangsu

2007-01-01

The structural and electrical properties of InN/GaN multiple quantum wells, which were grown by metalorganic chemical vapor deposition, were characterized by transmission electron microscopy (TEM) and electroluminescence measurements. From the TEM micrographs, it was shown that the well layer was grown like a quantum dot. The well layer is expected to be the nano-size structures in the InN multiple quantum well layers. The multi-photon confocal laser scanning microscopy was used to investigate the optical properties of the light emitting diode (LED) structures with InN active layers. It was found that the two-photon excitation was possible in InN system. The pit density was measured by using the far-field optical technique. In the varied current conditions, the blue LED with the InN multiple quantum well structures did not have the wavelength shift. With this result, we can expect that the white LEDs with the InN multiple quantum well structures do not show the color temperature changes with the variations of applied currents

Toward a muon-specific electronic structure theory: effective electronic Hartree-Fock equations for muonic molecules.

Science.gov (United States)

Rayka, Milad; Goli, Mohammad; Shahbazian, Shant

2018-02-07

An effective set of Hartree-Fock (HF) equations are derived for electrons of muonic systems, i.e., molecules containing a positively charged muon, conceiving the muon as a quantum oscillator, which are completely equivalent to the usual two-component HF equations used to derive stationary states of the muonic molecules. In these effective equations, a non-Coulombic potential is added to the orthodox coulomb and exchange potential energy terms, which describes the interaction of the muon and the electrons effectively and is optimized during the self-consistent field cycles. While in the two-component HF equations a muon is treated as a quantum particle, in the effective HF equations it is absorbed into the effective potential and practically transformed into an effective potential field experienced by electrons. The explicit form of the effective potential depends on the nature of muon's vibrations and is derivable from the basis set used to expand the muonic spatial orbital. The resulting effective Hartree-Fock equations are implemented computationally and used successfully, as a proof of concept, in a series of muonic molecules containing all atoms from the second and third rows of the Periodic Table. To solve the algebraic version of the equations muon-specific Gaussian basis sets are designed for both muon and surrounding electrons and it is demonstrated that the optimized exponents are quite distinct from those derived for the hydrogen isotopes. The developed effective HF theory is quite general and in principle can be used for any muonic system while it is the starting point for a general effective electronic structure theory that incorporates various types of quantum correlations into the muonic systems beyond the HF equations.

Optical and micro-structural characterizations of MBE grown indium gallium nitride polar quantum dots

KAUST Repository

Elafandy, Rami T.

2011-12-01

Comparison between indium rich (27%) InGaN/GaN quantum dots (QDs) and their underlying wetting layer (WL) is performed by means of optical and structural characterizations. With increasing temperature, micro-photoluminescence (μPL) study reveals the superior ability of QDs to prevent carrier thermalization to nearby traps compared to the two dimensional WL. Thus, explaining the higher internal quantum efficiency of the QD nanostructure compared to the higher dimensional WL. Structural characterization (X-ray diffraction (XRD)) and transmission electron microscopy (TEM)) reveal an increase in the QD indium content over the WL indium content which is due to strain induced drifts. © 2011 IEEE.

Quantum mechanical properties of graphene nano-flakes and quantum dots.

Science.gov (United States)

Shi, Hongqing; Barnard, Amanda S; Snook, Ian K

2012-11-07

In recent years considerable attention has been given to methods for modifying and controlling the electronic and quantum mechanical properties of graphene quantum dots. However, as these types of properties are indirect consequences of the wavefunction of the material, a more efficient way of determining properties may be to engineer the wavefunction directly. One way of doing this may be via deliberate structural modifications, such as producing graphene nanostructures with specific sizes and shapes. In this paper we use quantum mechanical simulations to determine whether the wavefunction, quantified via the distribution of the highest occupied molecular orbital, has a direct and reliable relationship to the physical structure, and whether structural modifications can be useful for wavefunction engineering. We find that the wavefunction of small molecular graphene structures can be different from those of larger nanoscale counterparts, and the distribution of the highest occupied molecular orbital is strongly affected by the geometric shape (but only weakly by edge and corner terminations). This indicates that both size and shape may be more useful parameters in determining quantum mechanical and electronic properties, which should then be reasonably robust against variations in the chemical passivation or functionalisation around the circumference.

Unoccupied electronic structure and relaxation dynamics of Pb/Si(1 1 1)

International Nuclear Information System (INIS)

Sandhofer, M.; Sklyadneva, I.Yu.; Sharma, V.; Trontl, V. Mikšić; Zhou, P.; Ligges, M.; Heid, R.; Bohnen, K.-P.; Chulkov, E.V.; Bovensiepen, U.

2014-01-01

Highlights: • The electronic structure of unoccupied quantum well states in Pb/Si(1 1 1) is analyzed. • The Si substrate modifies the binding energy and dispersion of the Pb bands. • The direct Pb 6p z orbital overlap with Si orbitals is marginal. • We conclude a 6p x,y mediated interaction of the 6p z states with the Si bulk bands. - Abstract: The unoccupied electronic structure of epitaxial Pb films on Si(1 1 1) is analyzed by angle-resolved two-photon photoemission in the Γ ¯ →M ¯ direction close to the Brillouin zone center. The experimental results are compared to density functional theory calculations and we focus on the nature of the interaction of the 6p z states with the Si substrate. The experimentally obtained dispersion E(k || ) of the unoccupied quantum well states is weaker than expected for freestanding films, in good agreement with their occupied counterparts. Following E(k || ) of quantum well states as a function of momentum at different energies, which are degenerate and non-degenerate with the Si conduction band, we observe no influence of the Si bulk band and conclude a vanishing direct interaction of the Pb 6p z states with the Si band. However, the momentum range at which mixing of 6p z and 6p x,y derived subbands is found to occur in the presence of the Si substrate is closer to Γ ¯ than in the corresponding freestanding film, which indicates a substrate-mediated enhancement of the mixing of these states. Additional femtosecond time-resolved measurements show a constant relaxation time of hot electrons in unoccupied quantum well states as a function of parallel electron momentum which supports our conclusion of a p x,y mediated interaction of the p z states with the Si conduction band

Entanglement transfer from electrons to photons in quantum dots: an open quantum system approach

International Nuclear Information System (INIS)

Budich, Jan C; Trauzettel, Bjoern

2010-01-01

We investigate entanglement transfer from a system of two spin-entangled electron-hole pairs, each placed in a separate single mode cavity, to the photons emitted due to cavity leakage. Dipole selection rules and a splitting between the light hole and the heavy hole subbands are the crucial ingredients establishing a one-to-one correspondence between electron spins and circular photon polarizations. To account for the measurement of the photons as well as dephasing effects, we choose a stochastic Schroedinger equation and a conditional master equation approach, respectively. The influence of interactions with the environment as well as asymmetries in the coherent couplings on the photon entanglement is analysed for two concrete measurement schemes. The first one is designed to violate the Clauser-Horne-Shimony-Holt (CHSH) inequality, while the second one employs the visibility of interference fringes to prove the entanglement of the photons. Because of the spatial separation of the entangled electronic system over two quantum dots, a successful verification of entangled photons emitted by this system would imply the detection of nonlocal spin entanglement of massive particles in a solid state structure.

Quantum resonance of nanometre-scale metal-ZnO-metal structure and its application in sensors

Directory of Open Access Journals (Sweden)

Lijie Li

2016-01-01

Full Text Available Analysis of the thickness dependence of the potential profile of the metal-ZnO-metal (MZM structure has been conducted based on Poisson’s equation and Schottky theory. Quantum scattering theory is then used to calculate the transmission probability of an electron passing through the MZM structure. Results show that the quantum resonance (QR effect becomes pronounced when the thickness of the ZnO film reaches to around 6 nm. Strain induced piezopotentials are considered as biases to the MZM, which significantly changes the QR according to the analysis. This effect can be potentially employed as nanoscale strain sensors.

Time-resolved electron transport in quantum-dot systems; Zeitaufgeloester Elektronentransport in Quantendotsystemen

Energy Technology Data Exchange (ETDEWEB)

Croy, Alexander

2010-06-30

In this thesis the time-resolved electron transport in quantum dot systems was studied. For this two different formalisms were presented: The nonequilibrium Green functions and the generalized quantum master equations. For both formalisms a propagation method for the numerical calculation of time-resolved expectation values, like the occupation and the electron current, was developed. For the demonstration of the propagation method two different question formulations were considered. On the one hand the stochastically driven resonant-level model was studied. On the other hand the pulse-induced transport through a double quantum dot was considered.

Does the Finite Size of Electrons Affect Quantum Noise in Electronic Devices?

International Nuclear Information System (INIS)

Colomés, E; Marian, D; Oriols, X

2015-01-01

Quantum transport is commonly studied with the use of quasi-particle infinite- extended states. This leads to a powerful formalism, the scattering-states theory, able to capture in compact formulas quantities of interest, such as average current, noise, etc.. However, when investigating the spatial size-dependence of quasi-particle wave packets in quantum noise with exchange and tunneling, unexpected new terms appear in the quantum noise expression. For this purpose, the two particle transmission and reflection probabilities for two initial one-particle wave packets (with opposite central momentums) spatially localized at each side of a potential barrier are studied. After the interaction, each wave packet splits into a transmitted and a reflected component. It can be shown that the probability of detecting two (identically injected) electrons at the same side of the barrier is different from zero in very common (single or double barrier) scenarios. This originates an increase of quantum noise which cannot be obtained through the scattering states formalism. (paper)

Stark-like electron transfer between quantum wells

International Nuclear Information System (INIS)

Dubovis, S.A.; Voronko, A.N.; Basharov, A.M.

2008-01-01

The Stark-like mechanism of electron transfer between two energy subband localized in remote quantum wells is examined theoretically. Estimations of major parameters of the problem in case of delta-function-wells model are adduced. Schematic model allowing experimental study of Stark-like transfer is proposed

Quantum Dots: Theory

Energy Technology Data Exchange (ETDEWEB)

Vukmirovic, Nenad; Wang, Lin-Wang

2009-11-10

This review covers the description of the methodologies typically used for the calculation of the electronic structure of self-assembled and colloidal quantum dots. These are illustrated by the results of their application to a selected set of physical effects in quantum dots.

Quantum spin-glass transition in the two-dimensional electron gas

Indian Academy of Sciences (India)

Home; Journals; Pramana – Journal of Physics; Volume 58; Issue 2 ... Spin glasses; quantum phase transition; ferromagnetism; electron gas. ... We argue that a quantum transition involving the destruction of the spin-glass order in an applied in-plane magnetic field offers a natural explanation of some features of recent ...

Spin boson models for quantum decoherence of electronic excitations of biomolecules and quantum dots in a solvent

International Nuclear Information System (INIS)

Gilmore, Joel; McKenzie, Ross H

2005-01-01

We give a theoretical treatment of the interaction of electronic excitations (excitons) in biomolecules and quantum dots with the surrounding polar solvent. Significant quantum decoherence occurs due to the interaction of the electric dipole moment of the solute with the fluctuating electric dipole moments of the individual molecules in the solvent. We introduce spin boson models which could be used to describe the effects of decoherence on the quantum dynamics of biomolecules which undergo light-induced conformational change and on biomolecules or quantum dots which are coupled by Foerster resonant energy transfer

Poly-silicon quantum-dot single-electron transistors

International Nuclear Information System (INIS)

Kang, Kwon-Chil; Lee, Joung-Eob; Lee, Jung-Han; Lee, Jong-Ho; Shin, Hyung-Cheol; Park, Byung-Gook

2012-01-01

For operation of a single-electron transistors (SETs) at room temperature, we proposed a fabrication method for a SET with a self-aligned quantum dot by using polycrystalline silicon (poly-Si). The self-aligned quantum dot is formed by the selective etching of a silicon nanowire on a planarized surface and the subsequent deposition and etch-back of poly-silicon or chemical mechanical polishing (CMP). The two tunneling barriers of the SET are fabricated by thermal oxidation. Also, to decrease the leakage current and control the gate capacitance, we deposit a hard oxide mask layer. The control gate is formed by using an electron beam and photolithography on chemical vapor deposition (CVD). Owing to the small capacitance of the narrow control gate due to the tetraethyl orthosilicate (TEOS) hard mask, we observe clear Coulomb oscillation peaks and differential trans-conductance curves at room temperature. The clear oscillation period of the fabricated SET is 2.0 V.

Analytic and numerical calculations of quantum synchrotron spectra from relativistic electron distributions

International Nuclear Information System (INIS)

Brainerd, J.J.; Petrosian, V.

1987-01-01

Calculations are performed numerically and analytically of synchrotron spectra for thermal and power-law electron distributions using the single-particle synchrotron power spectrum derived from quantum electrodynamics. It is found that the photon energy at which quantum effects appear is proportional to temperature and independent of field strength for thermal spectra; quantum effects introduce an exponential roll-off away from the classical spectra. For power law spectra, the photon energy at which quantum effects appear is inversely proportional to the magnetic field strength; quantum effects produce a steeper power law than is found classically. The results are compared with spectra derived from the classical power spectrum with an energy cutoff ensuring conservation of energy. It is found that an energy cutoff is generally an inadequate approximation of quantum effects for low photon energies and for thermal spectra, but gives reasonable results for high-energy emission from power-law electron distributions. 17 references

Correlated electrons in quantum matter

CERN Document Server

Fulde, Peter

2012-01-01

An understanding of the effects of electronic correlations in quantum systems is one of the most challenging problems in physics, partly due to the relevance in modern high technology. Yet there exist hardly any books on the subject which try to give a comprehensive overview on the field covering insulators, semiconductors, as well as metals. The present book tries to fill that gap. It intends to provide graduate students and researchers a comprehensive survey of electron correlations, weak and strong, in insulators, semiconductors and metals. This topic is a central one in condensed matter and beyond that in theoretical physics. The reader will have a better understanding of the great progress which has been made in the field over the past few decades.

Polarized fine structure in the excitation spectrum of a negatively charged quantum dot

OpenAIRE

Ware, M. E.; Stinaff, E. A.; Gammon, D.; Doty, M. F.; Bracker, A. S.; Gershoni, D.; Korenev, V. L.; Badescu, S. C.; Lyanda-Geller, Y.; Reinecke, T. L.

2005-01-01

We report polarized photoluminescence excitation spectroscopy of the negative trion in single charge tunable InAs/GaAs quantum dots. The spectrum exhibits a p-shell resonance with polarized fine structure arising from the direct excitation of the electron spin triplet states. The energy splitting arises from the axially symmetric electron-hole exchange interaction. The magnitude and sign of the polarization are understood from the spin character of the triplet states and a small amount of qua...

Natural occupation numbers in two-electron quantum rings.

Science.gov (United States)

Tognetti, Vincent; Loos, Pierre-François

2016-02-07

Natural orbitals (NOs) are central constituents for evaluating correlation energies through efficient approximations. Here, we report the closed-form expression of the NOs of two-electron quantum rings, which are prototypical finite-extension systems and new starting points for the development of exchange-correlation functionals in density functional theory. We also show that the natural occupation numbers for these two-electron paradigms are in general non-vanishing and follow the same power law decay as atomic and molecular two-electron systems.

Natural occupation numbers in two-electron quantum rings

Energy Technology Data Exchange (ETDEWEB)

Tognetti, Vincent, E-mail: vincent.tognetti@univ-rouen.fr [Normandy Univ., COBRA UMR 6014 & FR 3038, Université de Rouen, INSA Rouen, CNRS, 1 rue Tesniére, 76821 Mont Saint Aignan, Cedex (France); Loos, Pierre-François [Research School of Chemistry, Australian National University, Canberra ACT 2601 (Australia)

2016-02-07

Natural orbitals (NOs) are central constituents for evaluating correlation energies through efficient approximations. Here, we report the closed-form expression of the NOs of two-electron quantum rings, which are prototypical finite-extension systems and new starting points for the development of exchange-correlation functionals in density functional theory. We also show that the natural occupation numbers for these two-electron paradigms are in general non-vanishing and follow the same power law decay as atomic and molecular two-electron systems.

Experiments on melting in classical and quantum two dimensional electron systems

International Nuclear Information System (INIS)

Williams, F.I.B.

1991-01-01

''Two dimensional electron system'' (2DES) here refers to electrons whose dynamics is free in 2 dimensions but blocked in the third. Experiments have been performed in two limiting situations: the classical, low density, limit realised by electrons deposited on a liquid helium surface and the quantum, high density, limit realised by electrons at an interface between two epitaxially matched semiconductors. In the classical system, where T Q c so that the thermodynamic state is determined by the competition between the temperature and the Coulomb interaction, melting is induced either by raising the temperature at constant density or by lowering the density at finite temperature. In the quantum system, it is not possible to lower the density below about 100n W without the Coulomb interaction losing out to the random field representing the extrinsic disorder imposed by the semiconductor host. Instead one has to induce crystallisation with the help of the Lorentz force, by applying a perpendicular magnetic field B [2] . As the quantum magnetic length l c = (Planck constant c/eB) 1/2 is reduced with respect to the interelectronic spacing a, expressed by the filling factor ν 2l c 2 /a 2 , the system exhibits the quantum Hall effect (QHE), first for integer then for fractional values of ν. The fractional quantum Hall effect (FQHE) is a result of Coulomb induced correlation in the quantum liquid, but as ν is decreased still further the correlations are expected to take on long-range crystal-like periodicity accompanied by elastic shear rigidity. Such a state can nonetheless be destroyed by the disordering effect of temperature, giving rise to a phase boundary in a (T, B) plane. The aim of experiment is first to determine the phase diagram and then to help elucidate the mechanism of the melting. (author)

Optical pumping of electron and nuclear spin in a negatively-charged quantum dot

Science.gov (United States)

Bracker, Allan; Gershoni, David; Korenev, Vladimir

2005-03-01

We report optical pumping of electron and nuclear spins in an individual negatively-charged quantum dot. With a bias-controlled heterostructure, we inject one electron into the quantum dot. Intense laser excitation produces negative photoluminescence polarization, which is easily erased by the Hanle effect, demonstrating optical pumping of a long-lived resident electron. The electron spin lifetime is consistent with the influence of nuclear spin fluctuations. Measuring the Overhauser effect in high magnetic fields, we observe a high degree of nuclear spin polarization, which is closely correlated to electron spin pumping.

Quantum simulations of small electron-hole complexes

International Nuclear Information System (INIS)

Lee, M.A.; Kalia, R.K.; Vashishta, P.D.

1984-09-01

The Green's Function Monte Carlo method is applied to the calculation of the binding energies of electron-hole complexes in semiconductors. The quantum simulation method allows the unambiguous determination of the ground state energy and the effects of band anisotropy on the binding energy. 22 refs., 1 fig

Quantum Computing with an Electron Spin Ensemble

DEFF Research Database (Denmark)

Wesenberg, Janus; Ardavan, A.; Briggs, G.A.D.

2009-01-01

We propose to encode a register of quantum bits in different collective electron spin wave excitations in a solid medium. Coupling to spins is enabled by locating them in the vicinity of a superconducting transmission line cavity, and making use of their strong collective coupling to the quantized...

Quantum state propagation in linear photonic bandgap structures

International Nuclear Information System (INIS)

Severini, S; Tricca, D; Sibilia, C; Bertolotti, M; Perina, Jan

2004-01-01

In this paper we investigate the propagation of a generic quantum state in a corrugated waveguide, which reproduces a photonic bandgap structure. We find the conditions that assure the outcoming state to preserve the quantum properties of the incoming state. Then, focusing on a particular quantum state (realized by two counter-propagating coherent states), we study the possibility of preserving the quantum properties of this particular double coherent state even in the presence of absorption phenomena during propagation in the structure

Experimental determination of the electron effective masses and mobilities in each dimensionally-quantized subband in an InxGa1−xAs quantum well with InAs inserts

International Nuclear Information System (INIS)

Kulbachinskii, V. A.; Oveshnikov, L. N.; Lunin, R. A.; Yuzeeva, N. A.; Galiev, G. B.; Klimov, E. A.; Maltsev, P. P.

2015-01-01

HEMT structures with In 0.53 Ga 0.47 As quantum well are synthesized using molecular-beam epitaxy on InP substrates. The structures are double-side Si δ-doped so that two dimensionally-quantized subbands are occupied. The effect of the central InAs nanoinsert in the quantum well on the electron effective masses m* and mobilities in each subband is studied. For experimental determination of m*, the quantum μ q and transport μ t mobilities of the two-dimensional electron gas in each dimensionally-quantized subband, the Shubnikov-de Haas effect is measured at two temperatures of 4.2 and 8.4 K. The electron effective masses are determined by the temperature dependence of the oscillation amplitudes, separating the oscillations of each dimensionally-quantized subband. The Fourier spectra of oscillations are used to determine the electron mobilities μ q and μ t in each dimensionally-quantized subband. It is shown that m* decreases as the InAs-nanoinsert thickness d in the In 0.53 Ga 0.47 As quantum well and electron mobilities increase. The maximum electron mobility is observed at the insert thickness d = 3.4 nm

Transport anomalies and quantum criticality in electron-doped cuprate superconductors

Energy Technology Data Exchange (ETDEWEB)

Zhang, Xu; Yu, Heshan; He, Ge; Hu, Wei; Yuan, Jie; Zhu, Beiyi [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Jin, Kui, E-mail: kuijin@iphy.ac.cn [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100190 (China)

2016-06-15

Highlights: • Electrical transport and its complementary thermal transport on electron-doped cuprates are reviewed. • The common features of electron-doped cuprates are sorted out and shown in the last figure. • The complex superconducting fluctuations and quantum fluctuations are distinguished. - Abstract: Superconductivity research is like running a marathon. Three decades after the discovery of high-T{sub c} cuprates, there have been mass data generated from transport measurements, which bring fruitful information. In this review, we give a brief summary of the intriguing phenomena reported in electron-doped cuprates from the aspect of electrical transport as well as the complementary thermal transport. We attempt to sort out common features of the electron-doped family, e.g. the strange metal, negative magnetoresistance, multiple sign reversals of Hall in mixed state, abnormal Nernst signal, complex quantum criticality. Most of them have been challenging the existing theories, nevertheless, a unified diagram certainly helps to approach the nature of electron-doped cuprates.

Linear and nonlinear optical susceptibilities in a laterally coupled quantum-dot–quantum-ring system

International Nuclear Information System (INIS)

Zeng, Zaiping; Garoufalis, Christos S.; Baskoutas, Sotirios

2014-01-01

Linear and nonlinear optical susceptibilities in a laterally coupled quantum-dot–quantum-ring system have been theoretically studied. In general, we find that the structure parameters of the coupled system significantly affect the optical susceptibilities. The enhancement of the coupling effects between the dot and ring is found to increase considerably the optical susceptibilities and redshift drastically the transition energies. Comparing to the linear susceptibility, the nonlinear optical susceptibility is found to be more sensitive to the variation of the structure parameters. A comprehensive analysis of the electron probability density movement with respect to the modification of the structure parameters is provided, which offers a unique perspective of the ground-state localization. - Highlights: • Optical susceptibilities in a quantum-dot–quantum-ring system are studied. • The structure parameters significantly affect the optical susceptibilities. • The enhancement of the coupling effects increases the optical susceptibilities. • The nonlinear susceptibility is more sensitive to the change in structure parameters. • A comprehensive analysis of the electron probability density movement is provided

Electronic structure of nitride-based quantum dots

Energy Technology Data Exchange (ETDEWEB)

Winkelnkemper, Momme

2008-11-07

In the present work the electronic and optical properties of In{sub x}Ga{sub 1-x}N/GaN and GaN/AlN QDs are studied by means of eight-band k.p theory. Experimental results are interpreted in detail using the theoretical results. The k.p model for the QD electronicstructure calculations accounts for strain, piezo- and pyroelectric effects, spin-orbit and crystal-field splitting, and is implemented for arbitrarily shaped QDs on a finite differences grid. Few-particle corrections are included using the self-consistent Hartree method. Band parameters for the wurtzite and zinc-blende phases of GaN, AlN, and InN are derived from first-principle G{sub 0}W{sub 0} band-structure calculations. Reliable values are also provided for parameters that have not been determined experimentally yet. The electronic properties of nitride QDs are dominated by the large built-in piezo- and pyroelectric fields, which lead to a pronounced red-shift of excitonic transition energies and extremely long radiative lifetimes in large GaN/AlN QDs. In In{sub x}Ga{sub 1-x}N/GaN QDs these fields induce a pronounced dependence of the radiative excitonic lifetimes on the exact QD shape and composition. It is demonstrated that the resulting variations of the radiative lifetimes in an inhomogeneous QD ensemble are the origin of the multi-exponential luminescence decay frequently observed in time-resolved ensemble measurements on In{sub x}Ga{sub 1-x}N/GaN QDs. A polarization mechanism in nitride QDs based on strain-induced valence-band mixing effects is discovered. Due to the valence-band structure of wurtzite group-III nitrides and the specific strain situation in c-plane QDs, the confined hole states are formed predominantly by the two highest valence bands. In particular, the hole ground state (h{sub 0} {identical_to} h{sub A}) is formed by the A band, and the first excited hole state (h{sub 1} {identical_to} h{sub B}) by the B band. It is shown that the interband transitions involving h{sub A} or h

Adsorbate-induced modification of electronic band structure of epitaxial Bi(111) films

Energy Technology Data Exchange (ETDEWEB)

Matetskiy, A.V., E-mail: mateckij@iacp.dvo.ru [Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); Bondarenko, L.V.; Tupchaya, A.Y.; Gruznev, D.V. [Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); Eremeev, S.V. [Institute of Strength Physics and Materials Science, 634021 Tomsk (Russian Federation); Tomsk State University, 634050 Tomsk (Russian Federation); Zotov, A.V. [Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); School of Natural Sciences, Far Eastern Federal University, 690950 Vladivostok (Russian Federation); Department of Electronics, Vladivostok State University of Economics and Service, 690600 Vladivostok (Russian Federation); Saranin, A.A. [Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); School of Natural Sciences, Far Eastern Federal University, 690950 Vladivostok (Russian Federation)

2017-06-01

Highlights: • Modification of electronic properties of ultrathin Bi films by adsorbates is demonstrated. • Due to electron doping from Cs adatoms, surface-state bands shift to higher binding energies. • As a result, only electron pockets are left in the Fermi map. • Tin acts as an acceptor dopant for Bi, shifting Fermi level upward. • As a result, only hole pockets are left in the Fermi map. - Abstract: Changes of the electronic band structure of Bi(111) films on Si(111) induced by Cs and Sn adsorption have been studied using angle-resolved photoemission spectroscopy and density functional theory calculations. It has been found that small amounts of Cs when it presents at the surface in a form of the adatom gas leads to shifting of the surface and quantum well states to the higher binding energies due to the electron donation from adsorbate to the Bi film. In contrast, adsorbed Sn dissolves into the Bi film bulk upon heating and acts as an acceptor dopant, that results in shifting of the surface and quantum well states upward to the lower binding energies. These results pave the way to manipulate with the Bi thin film electron band structure allowing to achieve a certain type of conductivity (electron or hole) with a single spin channel at the Fermi level making the adsorbate-modified Bi a reliable base for prospective spintronics applications.

Theoretical Studies of the Electronic Structure of the Compounds of the Actinide Elements

International Nuclear Information System (INIS)

Kaltsoyannis, Nikolas; Hay, P.J.; Li, Jun; Blaudeau, Jean-Philippe; Bursten, Bruce E.

2006-01-01

In this chapter, we will present an overview of the theoretical and computational developments that have increased our understanding of the electronic structure of actinide-containing molecules and ions. The application of modern electronic structure methodologies to actinide systems remains one of the great challenges in quantum chemistry; indeed, as will be discussed below, there is no other portion of the periodic table that leads to the confluence of complexity with respect to the calculation of ground- and excited-state energies, bonding descriptions, and molecular properties. But there is also no place in the periodic table in which effective computational modeling of electronic structure can be more useful. The difficulties in creating, isolating, and handling many of the actinide elements provide an opportunity for computational chemistry to be an unusually important partner in developing the chemistry of these elements. The importance of actinide electronic structure begins with the earliest studies of uranium chemistry and predates the discovery of quantum mechanics. The fluorescence of uranyl compounds was observed as early as 1833, a presage of the development of actinometry as a tool for measuring photochemical quantum yields. Interest in nuclear fuels has stimulated tremendous interest in understanding the properties, including electronic properties, of small actinide-containing molecules and ions, especially the oxides and halides of uranium and plutonium. The synthesis of uranocene in 1968 led to the flurry of activity in the organometallic chemistry of the actinides that continues today. Actinide organometallics (or organoactinides) are nearly always molecular systems and are often volatile, which makes them amenable to an arsenal of experimental probes of molecular and electronic structure (Marks and Fischer, 1979). Theoretical and computational studies of the electronic structure of actinide systems have developed in concert with the experimental

Energy spectra of quantum rings.

Science.gov (United States)

Fuhrer, A; Lüscher, S; Ihn, T; Heinzel, T; Ensslin, K; Wegscheider, W; Bichler, M

2001-10-25

Quantum mechanical experiments in ring geometries have long fascinated physicists. Open rings connected to leads, for example, allow the observation of the Aharonov-Bohm effect, one of the best examples of quantum mechanical phase coherence. The phase coherence of electrons travelling through a quantum dot embedded in one arm of an open ring has also been demonstrated. The energy spectra of closed rings have only recently been studied by optical spectroscopy. The prediction that they allow persistent current has been explored in various experiments. Here we report magnetotransport experiments on closed rings in the Coulomb blockade regime. Our experiments show that a microscopic understanding of energy levels, so far limited to few-electron quantum dots, can be extended to a many-electron system. A semiclassical interpretation of our results indicates that electron motion in the rings is governed by regular rather than chaotic motion, an unexplored regime in many-electron quantum dots. This opens a way to experiments where even more complex structures can be investigated at a quantum mechanical level.

Correlation effects on spin-polarized electron-hole quantum bilayer

Energy Technology Data Exchange (ETDEWEB)

Saini, L. K., E-mail: drlalitsaini75@gmail.com; Sharma, R. O., E-mail: sharmarajesh0387@gmail.com [Department of Applied Physics, S. V. National Institute of Technology, Surat – 395 007 (India); Nayak, Mukesh G. [Department of Physics, Silvassa College (Silvassa Institute of Higher Learning), Silvassa 396 230 (India)

2016-05-06

We present a numerical calculation for the intra- and interlayer pair-correlation functions, g{sub ll’}(r), of spin-polarized electron-hole quantum bilayers at zero temperature. The calculations of g{sub ll’}(r) are performed by including electron correlations within the dynamical version of the self-consistent mean-field approximation of Singwi, Tosi, Land and Sjölander (qSTLS). Our study reveals that the critical layer density decreases (increases) due to the inclusion of finite width (mass-asymmetry) effect during the phase-transition from charge-density wave to Wigner crystal ground-state by yielding the pronounced oscillatory behavior ing{sub ll}(r). The results are compared with recent findings of spin-polarized electron-hole quantum bilayers with mass-symmetry and zero width effects. To highlight the importance of dynamical character of correlations, we have also compared our results with the STLS results.

Relationship between electronic structure and radioprotective activity of some indazoles

International Nuclear Information System (INIS)

Sokolov, Yu.A.

2000-01-01

The quantum-chemical study of electronic structure of 29 indasoles with complete optimization of geometry and search of quantitative link between the established characteristics and radioprotective activity (RPA) was carried out through the MNDO method with application of multiple linear and nonlinear regression analysis and the basic component method. The equations of correlation relationship between the RPA and electronic characteristics are presented. 10 indasole structures, the forecasted RPA values whereof (survival rate, %) equal 50% and above, are selected. The statistic significance of the obtained correlation equations and their regression coefficients make it possible to conclude, that the established relationships are not accidental and are prospective for forecasting RPA of other close compounds of the indasole series [ru

Tuning of few-electron states and optical absorption anisotropy in GaAs quantum rings.

Science.gov (United States)

Wu, Zhenhua; Li, Jian; Li, Jun; Yin, Huaxiang; Liu, Yu

2017-11-15

The electronic and optical properties of a GaAs quantum ring (QR) with few electrons in the presence of the Rashba spin-orbit interaction (RSOI) and the Dresselhaus spin-orbit interaction (DSOI) have been investigated theoretically. The configuration interaction (CI) method is employed to calculate the eigenvalues and eigenstates of the multiple-electron QR accurately. Our numerical results demonstrate that the symmetry breaking induced by the RSOI and DSOI leads to an anisotropic distribution of multi-electron states. The Coulomb interaction offers additional modulation of the electron distribution and thus the optical absorption indices in the quantum rings. By tuning the magnetic/electric fields and/or electron numbers in a quantum ring, one can change its optical properties significantly. Our theory provides a new way to control the multi-electron states and optical properties of a QR by hybrid modulations or by electrical means only.

Relativity, symmetry and the structure of quantum theory

CERN Document Server

Klink, William H; Schweiger, Wolfgang

Quantum theory is one of the most successful of all physical theories. Our everyday world is dominated by devices that function because of knowledge of the quantum world. Yet many, physicists and non-physicists alike, find the theory which explains the behavior of the quantum world baffling and strange. This book is the first in a series of three that argues that relativity and symmetry determine the structure of quantum theory. That is to say, the structure of quantum theory is what it is because of relativity and symmetry. There are different types of relativity, each leading to a particular type of quantum theory. This book deals specifically with what we call Newton relativity, the form of relativity built into Newtonian mechanics, and the quantum theory to which it gives rise, which we call Galilean (often misleadingly called non-relativistic) quantum theory. Key Features: • Meaning and significance of the term of relativity; discussion of the principle of relativity. • Relation of symmetry to relati...

Impact of environmentally induced fluctuations on quantum mechanically mixed electronic and vibrational pigment states in photosynthetic energy transfer and 2D electronic spectra

Energy Technology Data Exchange (ETDEWEB)

Fujihashi, Yuta; Ishizaki, Akihito, E-mail: ishizaki@ims.ac.jp [Institute for Molecular Science, National Institutes of Natural Sciences, Okazaki 444-8585 (Japan); Fleming, Graham R. [Department of Chemistry, University of California, Berkeley and Physical Biosciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

2015-06-07

Recently, nuclear vibrational contribution signatures in two-dimensional (2D) electronic spectroscopy have attracted considerable interest, in particular as regards interpretation of the oscillatory transients observed in light-harvesting complexes. These transients have dephasing times that persist for much longer than theoretically predicted electronic coherence lifetime. As a plausible explanation for this long-lived spectral beating in 2D electronic spectra, quantum-mechanically mixed electronic and vibrational states (vibronic excitons) were proposed by Christensson et al. [J. Phys. Chem. B 116, 7449 (2012)] and have since been explored. In this work, we address a dimer which produces little beating of electronic origin in the absence of vibronic contributions, and examine the impact of protein-induced fluctuations upon electronic-vibrational quantum mixtures by calculating the electronic energy transfer dynamics and 2D electronic spectra in a numerically accurate manner. It is found that, at cryogenic temperatures, the electronic-vibrational quantum mixtures are rather robust, even under the influence of the fluctuations and despite the small Huang-Rhys factors of the Franck-Condon active vibrational modes. This results in long-lasting beating behavior of vibrational origin in the 2D electronic spectra. At physiological temperatures, however, the fluctuations eradicate the mixing, and hence, the beating in the 2D spectra disappears. Further, it is demonstrated that such electronic-vibrational quantum mixtures do not necessarily play a significant role in electronic energy transfer dynamics, despite contributing to the enhancement of long-lived quantum beating in 2D electronic spectra, contrary to speculations in recent publications.

Plasmonic photocatalytic reactions enhanced by hot electrons in a one-dimensional quantum well

Directory of Open Access Journals (Sweden)

H. J. Huang

2015-11-01

Full Text Available The plasmonic endothermic oxidation of ammonium ions in a spinning disk reactor resulted in light energy transformation through quantum hot charge carriers (QHC, or quantum hot electrons, during a chemical reaction. It is demonstrated with a simple model that light of various intensities enhance the chemical oxidization of ammonium ions in water. It was further observed that light illumination, which induces the formation of plasmons on a platinum (Pt thin film, provided higher processing efficiency compared with the reaction on a bare glass disk. These induced plasmons generate quantum hot electrons with increasing momentum and energy in the one-dimensional quantum well of a Pt thin film. The energy carried by the quantum hot electrons provided the energy needed to catalyze the chemical reaction. The results indicate that one-dimensional confinement in spherical coordinates (i.e., nanoparticles is not necessary to provide an extra excited state for QHC generation; an 8 nm Pt thin film for one-dimensional confinement in Cartesian coordinates can also provide the extra excited state for the generation of QHC.

Properties of a GaAs Single Electron Path Switching Node Device Using a Single Quantum Dot for Hexagonal BDD Quantum Circuits

International Nuclear Information System (INIS)

Nakamura, Tatsuya; Abe, Yuji; Kasai, Seiya; Hasegawa, Hideki; Hashizume, Tamotsu

2006-01-01

A new single electron (SE) binary-decision diagram (BDD) node device having a single quantum dot connected to three nanowire branches through tunnel barriers was fabricated using etched AlGaAs/GaAs nanowires and nanometer-sized Schottky wrap gates (WPGs), and their operation was characterized experimentally, for the hexagonal BDD quantum circuit. Fabricated devices showed clear and steep single electron pass switching by applying only an input voltage signal, which was completely different from switching properties in the previous SE BDD node devices composed of two single electron switches. As the possible switching mechanism, the correlation between the probabilities of tunnelling thorough a single quantum dot in exit branches was discussed

Electron-phonon thermalization in a scalable method for real-time quantum dynamics

Science.gov (United States)

Rizzi, Valerio; Todorov, Tchavdar N.; Kohanoff, Jorge J.; Correa, Alfredo A.

2016-01-01

We present a quantum simulation method that follows the dynamics of out-of-equilibrium many-body systems of electrons and oscillators in real time. Its cost is linear in the number of oscillators and it can probe time scales from attoseconds to hundreds of picoseconds. Contrary to Ehrenfest dynamics, it can thermalize starting from a variety of initial conditions, including electronic population inversion. While an electronic temperature can be defined in terms of a nonequilibrium entropy, a Fermi-Dirac distribution in general emerges only after thermalization. These results can be used to construct a kinetic model of electron-phonon equilibration based on the explicit quantum dynamics.

Two dimensional electron systems for solid state quantum computation

Science.gov (United States)

Mondal, Sumit

Two dimensional electron systems based on GaAs/AlGaAs heterostructures are extremely useful in various scientific investigations of recent times including the search for quantum computational schemes. Although significant strides have been made over the past few years to realize solid state qubits on GaAs/AlGaAs 2DEGs, there are numerous factors limiting the progress. We attempt to identify factors that have material and design-specific origin and develop ways to overcome them. The thesis is divided in two broad segments. In the first segment we describe the realization of a new field-effect induced two dimensional electron system on GaAs/AlGaAs heterostructure where the novel device-design is expected to suppress the level of charge noise present in the device. Modulation-doped GaAs/AlGaAs heterostructures are utilized extensively in the study of quantum transport in nanostructures, but charge fluctuations associated with remote ionized dopants often produce deleterious effects. Electric field-induced carrier systems offer an attractive alternative if certain challenges can be overcome. We demonstrate a field-effect transistor in which the active channel is locally devoid of modulation-doping, but silicon dopant atoms are retained in the ohmic contact region to facilitate low-resistance contacts. A high quality two-dimensional electron gas is induced by a field-effect that is tunable over a density range of 6.5x10 10cm-2 to 2.6x1011cm-2 . Device design, fabrication, and low temperature (T=0.3K) characterization results are discussed. The demonstrated device-design overcomes several existing limitations in the fabrication of field-induced 2DEGs and might find utility in hosting nanostructures required for making spin qubits. The second broad segment describes our effort to correlate transport parameters measured at T=0.3K to the strength of the fractional quantum Hall state observed at nu=5/2 in the second Landau level of high-mobility GaAs/AlGaAs two dimensional

Electron Transport in Coupled Quantum Dots

National Research Council Canada - National Science Library

Antoniadis, D

1998-01-01

In the course of the investigation funded by this proposal we fabricated, modeled, and measured a variety of quantum dot structures in order to better understand how such nanostructures might be used for computation...

Optical dynamics in low-dimensional semiconductor heterostructures. Quantum dots and quantum cascade lasers

Energy Technology Data Exchange (ETDEWEB)

Weber, Carsten

2008-07-01

This work is focused on the optical dynamics of mesoscopic semiconductor heterostructures, using as prototypes zero-dimensional quantum dots and quantum cascade lasers which consist of quasitwo- dimensional quantum wells. Within a density matrix theory, a microscopic many-particle theory is applied to study scattering effects in these structures: the coupling to external as well as local fields, electron-phonon coupling, coupling to impurities, and Coulomb coupling. For both systems, the investigated effects are compared to experimentally observed results obtained during the past years. In quantum dots, the three-dimensional spatial confinement leads to the necessity to consider a quantum kinetic description of the dynamics, resulting in non-Markovian electron-phonon effects. This can be seen in the spectral phonon sidebands due to interaction with acoustic phonons as well as a damping of nonlinear Rabi oscillations which shows a nonmonotonous intensity and pulse duration dependence. An analysis of the inclusion of the self-interaction of the quantum dot shows that no dynamical local field terms appear for the simple two-level model. Considering local fields which have their origin in many quantum dots, consequences for a two-level quantum dot such as a zero-phonon line broadening and an increasing signal in photon echo experiments are found. For the use of quantum dots in an optical spin control scheme, it is found that the dephasing due to the electron-phonon interaction can be dominant in certain regimes. Furthermore, soliton and breather solutions are studied analytically in nonlinear quantum dot ensembles. Generalizing to quasi-two-dimensional structures, the intersubband dynamics of quantum cascade laser structures is investigated. A dynamical theory is considered in which the temporal evolution of the subband populations and the current density as well as the influence of scattering effects is studied. In the nonlinear regime, the scattering dependence and

Landau damping effects on collision-induced quantum interference in electron-hole plasmas

International Nuclear Information System (INIS)

Hwa-Min, Kim; Young-Dae, Jung

2007-01-01

The Landau damping effects on the quantum interference in electron collisions are investigated in a quantum plasma composed of electrons and holes. The Born method and the total spin states are considered to obtain the scattering cross-section by using the effective screened potential model. It is found that the Landau damping effects enhance the scattering cross-section, especially, near the scattering angle θ L = π/4. (authors)

Landau damping effects on collision-induced quantum interference in electron-hole plasmas

Energy Technology Data Exchange (ETDEWEB)

Hwa-Min, Kim [Daegu Univ. Catholic, Dept. of Electronics Engineering (Korea, Republic of); Young-Dae, Jung [Hanyang Univ., Dept. of Applied Physics, Seoul (Korea, Republic of)

2007-07-15

The Landau damping effects on the quantum interference in electron collisions are investigated in a quantum plasma composed of electrons and holes. The Born method and the total spin states are considered to obtain the scattering cross-section by using the effective screened potential model. It is found that the Landau damping effects enhance the scattering cross-section, especially, near the scattering angle {theta}{sub L} = {pi}/4. (authors)

Applied nonlinear optics in the journal 'Quantum Electronics'

International Nuclear Information System (INIS)

Grechin, Sergei G; Dmitriev, Valentin G; Chirkin, Anatolii S

2011-01-01

A brief historical review of the experimental and theoretical works on nonlinear optical frequency conversion (generation of harmonics, up- and down-conversion, parametric oscillation), which have been published in the journal 'Quantum Electronics' for the last 40 years, is presented.

Electronic Structures of Strained InAs x P1-x by Density Functional Theory.

Science.gov (United States)

Lee, Seung Mi; Kim, Min-Young; Kim, Young Heon

2018-09-01

We investigated the effects of strain on the electronic structures of InAsxP1-x using quantum mechanical density functional theory calculations. The electronic band gap and electron effective mass decreased with the increase of the uniaxial tensile strain along the [0001] direction of wurtzite InAs0.75P0.25. Therefore, faster electron movements are expected. These theoretical results are in good agreement with the experimental measurements of InAs0.75P0.25 nanowire.

Photoelectron spectra and electronic structure of some spiroborate complexes

Energy Technology Data Exchange (ETDEWEB)

Vovna, V.I.; Tikhonov, S.A.; Lvov, I.B., E-mail: lvov.ib@dvfu.ru; Osmushko, I.S.; Svistunova, I.V.; Shcheka, O.L.

2014-12-15

Highlights: • The electronic structure of three spiroborate complexes—boron 1,2-dioxyphenylene β-diketonates has been investigated. • UV and X-ray photoelectron spectra have been interpreted. • DFT calculations have been used for interpretation of spectral bands. • The binding energy of nonequivalent carbon and oxygen atoms were measured. • The structure of X-ray photoelectron spectra of the valence electrons is in good agreement with the energies and composition of Kohn–Sham orbitals. - Abstract: The electronic structure of the valence and core levels of three spiroborate complexes – boron 1,2-dioxyphenylene β-diketonates – has been investigated by methods of UV and X-ray photoelectron spectroscopy and quantum chemical density functional theory. The ionization energy of π- and n-orbitals of the dioxyphenylene fragment and β-diketonate ligand were measured from UV photoelectron spectra. This made it possible to determine the effect of substitution of one or two methyl groups by the phenyl in diketone on the electronic structure of complexes. The binding energy of nonequivalent carbon and oxygen atoms were measured from X-ray photoelectron spectra. The results of calculations of the energy of the valence orbitals of complexes allowed us to refer bands observed in the spectra of the valence electrons to the 2s-type levels of carbon and oxygen.

Mode locking of electron spin coherences in singly charged quantum dots.

Science.gov (United States)

Greilich, A; Yakovlev, D R; Shabaev, A; Efros, Al L; Yugova, I A; Oulton, R; Stavarache, V; Reuter, D; Wieck, A; Bayer, M

2006-07-21

The fast dephasing of electron spins in an ensemble of quantum dots is detrimental for applications in quantum information processing. We show here that dephasing can be overcome by using a periodic train of light pulses to synchronize the phases of the precessing spins, and we demonstrate this effect in an ensemble of singly charged (In,Ga)As/GaAs quantum dots. This mode locking leads to constructive interference of contributions to Faraday rotation and presents potential applications based on robust quantum coherence within an ensemble of dots.

Fractional conductance oscillations in quantum rings: wave packet picture of transport in a few-electron system.

Science.gov (United States)

Chwiej, T; Szafran, B

2013-04-17

We study electron transfer across a two-terminal quantum ring using a time-dependent description of the scattering process. For the considered scattering event the quantum ring is initially charged with one or two electrons, with another electron incident to the ring from the input channel. We study the electron transfer probability (T) as a function of the external magnetic field. We determine the periodicity of T for a varied number of electrons confined within the ring. For that purpose we develop a method to describe the wave packet dynamics for a few electrons participating in the scattering process, taking into full account the electron-electron correlations. We find that electron transfer across the quantum ring initially charged by a single electron acquires a distinct periodicity of half of the magnetic flux quantum (Φ0/2), corresponding to the formation of a transient two-electron state inside the ring. In the case of a three-electron scattering problem with two electrons initially occupying the ring, a period of Φ0/3 for T is formed in the limit of thin channels. The effect of disorder present in the confinement potential of the ring is also discussed.

Molecular Structure and Electronic Properties of Porphyrin-Thiophene-Perylene Using Quantum Chemical Calculation

Directory of Open Access Journals (Sweden)

Tatiya Chokbunpiam

2010-01-01

Full Text Available This study aimed to design a new series of compounds consisting of a porphyrin macrocycle linked to a perylene unit via a thiophenic bridge. The structural and electronic properties of the molecules, and the effects of mono- and di-substituents R on C3 and R′ on C4 of the thiophene ring were investigated using a quantum calculation approach. The results from the method validation revealed that using the density functional theory approach at B3LYP/6–31G(d data set was the optimal one, considering the accuracy attained and maintaining the computer time required within tractable limits. The results from the B3LYP/6–31G(d approach indicated that significant changes of the torsion angle between the molecular planes of the porphyrin and perylene rings, compared to that of the unsubstituted derivatives, were found in the di-substituted systems bearing R = R′ = −OCH3 and −NH2, and in a mono-substituted system having R = −H and R′=−NH2. The symmetric di-substitution does not provide a significantly lower HOMO-LUMO energy gap (ΔEg. Noticeable decreases in ΔEg were found only with the substitution patterns of: R, R′ = −OCH3, −H; −OH, −H; −N(CH32, −H; −H, −NH2. UV-visible spectra of all derivatives exhibited characteristic absorption maxima of the free bases of porphyrin and perylene.

Electrostatic modulation of periodic potentials in a two-dimensional electron gas: From antidot lattice to quantum dot lattice

Energy Technology Data Exchange (ETDEWEB)

Goswami, Srijit; Aamir, Mohammed Ali; Shamim, Saquib; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Siegert, Christoph; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

2013-12-04

We use a dual gated device structure to introduce a gate-tuneable periodic potential in a GaAs/AlGaAs two dimensional electron gas (2DEG). Using only a suitable choice of gate voltages we can controllably alter the potential landscape of the bare 2DEG, inducing either a periodic array of antidots or quantum dots. Antidots are artificial scattering centers, and therefore allow for a study of electron dynamics. In particular, we show that the thermovoltage of an antidot lattice is particularly sensitive to the relative positions of the Fermi level and the antidot potential. A quantum dot lattice, on the other hand, provides the opportunity to study correlated electron physics. We find that its current-voltage characteristics display a voltage threshold, as well as a power law scaling, indicative of collective Coulomb blockade in a disordered background.

Electrostatic modulation of periodic potentials in a two-dimensional electron gas: From antidot lattice to quantum dot lattice

International Nuclear Information System (INIS)

Goswami, Srijit; Aamir, Mohammed Ali; Shamim, Saquib; Ghosh, Arindam; Siegert, Christoph; Farrer, Ian; Ritchie, David A.; Pepper, Michael

2013-01-01

We use a dual gated device structure to introduce a gate-tuneable periodic potential in a GaAs/AlGaAs two dimensional electron gas (2DEG). Using only a suitable choice of gate voltages we can controllably alter the potential landscape of the bare 2DEG, inducing either a periodic array of antidots or quantum dots. Antidots are artificial scattering centers, and therefore allow for a study of electron dynamics. In particular, we show that the thermovoltage of an antidot lattice is particularly sensitive to the relative positions of the Fermi level and the antidot potential. A quantum dot lattice, on the other hand, provides the opportunity to study correlated electron physics. We find that its current-voltage characteristics display a voltage threshold, as well as a power law scaling, indicative of collective Coulomb blockade in a disordered background