WorldWideScience

Sample records for electronic structure electrical

  1. Electric dipole, polarizability and structure of cesium chloride clusters with one-excess electron

    International Nuclear Information System (INIS)

    Jraij, A.; Allouche, A.R.; Rabilloud, F.; Korek, M.; Aubert-Frecon, M.; Rayane, D.; Compagnon, I.; Antoine, R.; Broyer, M.; Dugourd, Ph.

    2006-01-01

    The measurement of the electric dipole of gas phase one-excess electron Cs n Cl n-1 clusters is reported together with a theoretical ab initio prediction of stable structures, dipole moments and electronic polarizabilities for these species in their ground state. Results are in agreement with NaCl cubic structures

  2. Electric-field effects on electronic tunneling transport in magnetic barrier structures

    International Nuclear Information System (INIS)

    Guo Yong; Wang Hao; Gu Binglin; Kawazoe, Yoshiyuki

    2000-01-01

    Electronic transport properties in magnetic barrier structures under the influence of an electric field have been investigated. The results indicate that the characteristics of transmission resonance are determined not only by the structure and the incident wave vector but also strongly by the electric field. It is shown that the transmission coefficient at resonance in the low-energy range is suppressed by applying the electric field for electron tunneling through the magnetic barrier structure, arranged with identical magnetic barriers and wells. It is also shown that the transmission resonance is first enhanced up to optimal resonance, and then suppressed with further increased electric field for electron tunneling through the magnetic barrier structure, arranged with unidentical building blocks. Strong suppression of the current density is also found in the magnetic barrier structure, arranged with two different building blocks

  3. Crystal structure, electrical properties and electronic band structure of tantalum ditelluride

    CERN Document Server

    Vernes, A; Bensch, W; Heid, W; Naether, C

    1998-01-01

    Motivated by the unexpectedly strong influence of the Te atoms on the structural and bonding properties of the transition metal tellurides, we have performed a detailed study of TaTe sub 2. Experimentally, this comprises a crystal structure determination as well as electrical resistivity measurements. The former analysis leads to an accurate update of the structural data reported in the 1960s, while the latter provides evidence for the mainly electronic character of scattering processes leading to the electrical conductivity. In addition, the electronic properties of TaTe sub 2 have been calculated using the TB-LMTO method. The partial density of states reflects the close connection of the Ta zigzag chains and the Te-Te network. This finding explains the charge transfer in the system in a rather simple way. The orthogonal-orbital character of the bands proved the existence of pi-bonds. The Fermi-surface study supports the interpretation of the experimental resistivity measurements. (author)

  4. Modification of C60/C70+Pd film structure under electric field influence during electron emission

    International Nuclear Information System (INIS)

    Czerwosz, E.; Dluzewski, P.; Kozlowski, M.

    2001-01-01

    We investigated the modification of structure of C 60 /C 70 +Pd films during cold electron emission from these films. Films were obtained by vacuum thermal deposition from two sources and were characterised before and after electron emission measurements by transmission electron microscopy and electron diffraction. Films were composed of nanocrystalline Pd objects dispersed in carbon/fullerenes matrix. I-V characteristics for electron emission were obtained in diode geometry with additionally applied voltage along the film surface. The modification of film structure occurred under applied electric field and the grouping of Pd nano crystals into bigger objects was observed

  5. Electric field effect on the electronic structure of 2D Y2C electride

    Science.gov (United States)

    Oh, Youngtek; Lee, Junsu; Park, Jongho; Kwon, Hyeokshin; Jeon, Insu; Wng Kim, Sung; Kim, Gunn; Park, Seongjun; Hwang, Sung Woo

    2018-07-01

    Electrides are ionic compounds in which electrons confined in the interstitial spaces serve as anions and are attractive owing to their exotic physical and chemical properties in terms of their low work function and efficient charge-transfer characteristics. Depending on the topology of the anionic electrons, the surface electronic structures of electrides can be significantly altered. In particular, the electronic structures of two-dimensional (2D) electride surfaces are of interest because the localized anionic electrons at the interlayer space can be naturally exposed to cleaved surfaces. In this paper, we report the electronic structure of 2D Y2C electride surface using scanning tunneling microscopy (STM) and first-principles calculations, which reveals that anionic electrons at a cleaved surface are absorbed by the surface and subsequently resurged onto the surface due to an applied electric field. We highlight that the estranged anionic electrons caused by the electric field occupy the slightly shifted crystallographic site compared with a bulk Y2C electride. We also measure the work function of the Y2C single crystal, and it shows a slightly lower value than the calculated one, which appears to be due to the electric field from the STM junction.

  6. Electronic structure and electric fields gradients of crystalline Sn(II) and Sn(IV) compounds

    International Nuclear Information System (INIS)

    Terra, J.; Guenzburger, D.

    1991-01-01

    The electronic structures of clusters representing crystalline compounds of Sn(II) and Sn(IV) were investigated, employing the first-principles Discrete Variational method and Local Density theory. Densities of states and related parameters were obtained and compared with experimental measurements and with results from band structure calculations. Effects of cluster size and of cluster truncated bonds are discussed. Electric field gradients at the Sn nucleus were calculated; results are analysed in terms of charge distribution and chemical bonding in the crystals. (author)

  7. Electricity electron measurement

    International Nuclear Information System (INIS)

    Kim, Sang Jin; Sung, Rak Jin

    1985-11-01

    This book deals with measurement of electricity and electron. It is divided into fourteen chapters, which depicts basic of electricity measurement, unit and standard, important electron circuit for measurement, instrument of electricity, impedance measurement, power and power amount measurement, frequency and time measurement, waveform measurement, record instrument and direct viewing instrument, super high frequency measurement, digital measurement on analog-digital convert, magnetic measurement on classification by principle of measurement, measurement of electricity application with principle sensors and systematization of measurement.

  8. Electric field modulation of electronic structures in InSe and black phosphorus heterostructure

    Science.gov (United States)

    Ding, Yi-min; Shi, Jun-jie; Zhang, Min; Xia, Congxin; Wu, Meng; Wang, Hui; Cen, Yu-lang; Pan, Shu-hang

    2018-01-01

    The electronic structures of InSe and black phosphorus (BP) heterostructure modulated by an external electric field (E⊥) have been investigated based on first-principles calculations. We find that InSe/BP has type II band offset with a direct band gap of 0.39 eV, and the electrons (holes) are spatially located in InSe (BP) layer. Meanwhile, the band structures of InSe/BP can be effectively modulated by E⊥. The band gap shows linear variation with E⊥ and its maximum of 0.69 eV is observed when E⊥ is 0.4 V / Å. The InSe/BP experiences a transition from semiconductor to metal with E⊥ of -0.6 and 0.8 V / Å. The band offsets are also modulated by E⊥, resulting in different spatial distribution of electron-hole pairs. Most importantly, the high carrier mobility can be preserved well under E⊥. Our results show that the novel InSe/BP heterostructure has great potential application in electronic and optoelectronic devices.

  9. Electron mobility in nonpolar liquids: the effect of molecular structure, temperature and electric field

    International Nuclear Information System (INIS)

    Schmidt, W.F.

    1977-01-01

    A survey is given on the mobility of excess electrons in liquid hydrocarbons and related compounds. It was found that the mobility is strongly influenced by the molecular structure of the liquid, by the temperature, and by the electric field strength. The mobility in hydrocarbons increases as the shape of the molecule approaches a sphere. The temperature coefficient is positive in most liquids over a limited temperature although exceptions have been observed in liquid methane. The field dependence of the mobility in high mobility liquids (>10 cm 2 V -1 s -1 ) showed a decrease of the mobility at higher field strengths while in low mobility liquids ( 2 V -1 s -1 ) it showed an increase. These results are discussed on the basis of the extended and the localized electron models. The predictions of these theories are compared with the experimental results and conclusions on the validity of the underlying assumptions are drawn. (author)

  10. Electric potential structures and propagation of electron beams injected from a spacecraft into a plasma

    International Nuclear Information System (INIS)

    Singh, Nagendra; Hwang, K.S.

    1988-01-01

    The propagation of electron beams injected from a spacecraft into an ambient plasma and the associated potential structures are investigated by one-dimensional Vlasov simulations. For moderate beams, for which the time average spacecraft potential (Φ sa ) lies in the range T e much-lt eΦ sa approx-lt W B , where T e is the electron temperature in energy units and W B is the average beam energy, a double layer forms near the beam head which propagates into the ambient plasma much more slowly than the initial beam velocity. The double layer formation is being reported for the first time. For weak beams, for which |eΦ sa | approx-lt T e , the beam propagates with the initial beam velocity, and no double layer formation occurs. On the other hand, for strong beams for which eΦ sa > W B , the bulk of the beam is returned to the spacecraft, and the main feature of the potential structure is a sheath formation with an intense electric field limited to distances d near the spacecraft surface. These features of the potential structures are compared with those seen in laboratory and space experiments on electron beam injections

  11. Electronic structure and trajectory control of Dirac fermions in graphene ribbons under the competition between electric and magnetic fields

    International Nuclear Information System (INIS)

    Yang, Mou; Cui, Yan; Wang, Rui-Qiang; Zhao, Hong-Bo

    2012-01-01

    We investigate the electronic structure of graphene ribbons under the competition between lateral electric and normal magnetic fields. The squeezing of quantum level spacings caused by either field is studied. Based on the knowledge of the dispersion under both fields, we analyze the electronic trajectories near the junctions of different electric and magnetic fields configurations. The junctions can split and join electron beams, and the conductance is quite robust against disorder near the junction interfaces. These junction devices can be used as bricks for building more complicated interference devices. -- Highlights: ► Unified physical picture of graphene ribbon under electric and magnetic fields is provided. ► Squeezing of level spacings caused by electric and magnetic fields is investigated. ► Graphene devices for electron beam split and joint are proposed.

  12. Electrical and electronic principles

    CERN Document Server

    Knight, SA

    1988-01-01

    Electrical and Electronic Principles, 3 focuses on the principles involved in electrical and electronic circuits, including impedance, inductance, capacitance, and resistance.The book first deals with circuit elements and theorems, D.C. transients, and the series circuits of alternating current. Discussions focus on inductance and resistance in series, resistance and capacitance in series, power factor, impedance, circuit magnification, equation of charge, discharge of a capacitor, transfer of power, and decibels and attenuation. The manuscript then examines the parallel circuits of alternatin

  13. Electrical and electronic principles

    CERN Document Server

    Knight, S A

    1991-01-01

    Electrical and Electronic Principles, 2, Second Edition covers the syllabus requirements of BTEC Unit U86/329, including the principles of control systems and elements of data transmission. The book first tackles series and parallel circuits, electrical networks, and capacitors and capacitance. Discussions focus on flux density, electric force, permittivity, Kirchhoff's laws, superposition theorem, arrangement of resistors, internal resistance, and powers in a circuit. The text then takes a look at capacitors in circuit, magnetism and magnetization, electromagnetic induction, and alternating v

  14. The inversion layer of electric fields and electron phase-space-hole structure during two-dimensional collisionless magnetic reconnection

    International Nuclear Information System (INIS)

    Chen Lijen; Lefebvre, Bertrand; Torbert, Roy B.; Daughton, William S.

    2011-01-01

    Based on two-dimensional fully kinetic simulations that resolve the electron diffusion layer in undriven collisionless magnetic reconnection with zero guide field, this paper reports the existence and evolution of an inversion layer of bipolar electric fields, its corresponding phase-space structure (an electron-hole layer), and the implication to collisionless dissipation. The inversion electric field layer is embedded in the layer of bipolar Hall electric field and extends throughout the entire length of the electron diffusion layer. The electron phase-space hole structure spontaneously arises during the explosive growth phase when there exist significant inflows into the reconnection layer, and electrons perform meandering orbits across the layer while being cyclotron-turned toward the outflow directions. The cyclotron turning of meandering electrons by the magnetic field normal to the reconnection layer is shown to be a primary factor limiting the current density in the region where the reconnection electric field is balanced by the gradient (along the current sheet normal) of the off-diagonal electron pressure-tensor.

  15. Multisubband electron mobility in a parabolic quantum well structure under the influence of an applied electric field

    International Nuclear Information System (INIS)

    Sahoo, N.; Sahu, T.

    2014-01-01

    We study the multisubband electron mobility in a barrier delta doped Al x Ga 1−x As parabolic quantum well structure under the influence of an applied electric field perpendicular to the interface plane. We consider the alloy fraction x = 0.3 for barriers and vary x from 0.0 to 0.1 for the parabolic well. Electrons diffuse into the well and confine within the triangular like potentials near the interfaces due to Coulomb interaction with ionized donors. The parabolic structure potential, being opposite in nature, partly compensates the Coulomb potential. The external electric field further amends the potential structure leading to an asymmetric potential profile. Accordingly the energy levels, wave functions and occupation of subbands change. We calculate low temperature electron mobility as a function of the electric field and show that when two subbands are occupied, the mobility is mostly dominated by ionised impurity scattering mediated by intersubband effects. As the field increases transition from double subband to single subband occupancy occurs. A sudden enhancement in mobility is obtained due to curtailment of intersubband effects. Thereafter the mobility is governed by both impurity and alloy disorder scatterings. Our analysis of mobility as a function of the electric field for different structural parameters shows interesting results. (semiconductor physics)

  16. 8 MeV electron beam induced modifications in the thermal, structural and electrical properties of nanophase CeO2 for potential electronics applications

    Science.gov (United States)

    Babitha, K. K.; Sreedevi, A.; Priyanka, K. P.; Ganesh, S.; Varghese, Thomas

    2018-06-01

    The effect of 8 MeV electron beam irradiation on the thermal, structural and electrical properties of CeO2 nanoparticles synthesized by chemical precipitation route was investigated. The dose dependent effect of electron irradiation was studied using various characterization techniques such as, thermogravimetric and differential thermal analyses, X-ray diffraction, Fourier transformed infrared spectroscopy and impedance spectroscopy. Systematic investigation based on the results of structural studies confirm that electron beam irradiation induces defects and particle size variation on CeO2 nanoparticles, which in turn results improvements in AC conductivity, dielectric constant and loss tangent. Structural modifications and high value of dielectric constant for CeO2 nanoparticles due to electron beam irradiation make it as a promising material for the fabrication of gate dielectric in metal oxide semiconductor devices.

  17. Electric field gradient and electronic structure of linear-bonded halide compounds

    International Nuclear Information System (INIS)

    Ellis, D.E.; Guenzburger, D.J.R.; Jansen, H.B.

    1983-01-01

    The importance of covalent metal-ligand interactions in determining hyperfine fields and energy-level structure of MX 2 linear-bonded halide compounds has been studied, using the self-consistent local density molecular orbital approach. Results for FeCl 2 , FeBr 2 and EuCl 2 obtained using the Discrete Variational Method with numerical basis sets are presented. The high spin configuration for the iron compounds, first predicted by Berkowitz, et al., is verified; a successful comparison with gas phase photoelectron spectra is made. Variation of the predicted electric field gradient with bond length R is found to be rapid; the need for an EXAFS measurement of R for the matrix isolated species and experimental determination of the spin of the EFG is seen to be crucial for more accurate determinations of the sub(57) Fe quadrupole moment. (Author) [pt

  18. Structural properties, electric response and electronic feature of BaSnO3 perovskite

    International Nuclear Information System (INIS)

    Cuervo Farfan, J.; Arbey Rodriguez, J.; Fajardo, F.; Vera Lopez, E.; Landinez Tellez, D.A.; Roa-Rojas, J.

    2009-01-01

    It has been observed that the semiconducting compound SnO 2 presents very good results as gas sensor. One important development has been performed to study perovskite oxides for this relevant application. One oxide material which constitutes an excellent candidate for this technological application is BaSnO 3 . Polycrystalline samples with single phase of BaSnO 3 were synthesized by using the solid state reaction method. Samples were characterized structurally by means of X-ray diffraction (XRD) technique. Rietveld refinement, by using the GSAS code, reveals that this material synthesizes in a cubic perovskite, space group Pm3m (no. 221), with lattice parameter 4.1190(3)A. Electric response was examined through the impedance spectroscopy technique. Results of Bode diagram, from an equivalent circuit, evidence the semiconductor character of material. We carried out a theoretical study by means of the calculation of the bands diagram and the density of states of the BaSnO 3 . Calculation was performed by employing the density functional theory (DFT), with the generalized gradient approach (GGA). DFT theory permitted to establish that BaSnO 3 material has an indirect semiconducting behavior. The calculated gap for this perovskite-like stagnate is at least 0.4 eV. Bulk modulus for material was also determined to be 132 GPa.

  19. The Effect of Electrical Polarization on Electronic Structure in LSM Electrodes: An Operando XAS, RIXS and XES Study

    DEFF Research Database (Denmark)

    Traulsen, Marie Lund; Carvalho, H.W.P.; Zielke, Philipp

    2017-01-01

    in the Mn K edge energy towards lower energies. The shift is assigned to a decrease in the average Mn oxidation state, which based on Kβ XES changes from 3.4 at open circuit voltage to 3.2 at −800 mV applied potential. Furthermore, RIXS rendered pronounced changes in the population of the Mn 3d orbitals...... (RIXS) at the Mn K-edge. The study of polarization induced changes in the electronic properties and structure has been carried out at 500°C in 10–20% O2 with electrical polarization applied in the range from −850 mV to 800 mV. Cathodic polarizations in the range −600 mV to −850 mV induced a shift......, due to filling of the Mn d-orbitals during the cathodic polarization. Overall, the study experimentally links the electrical polarization of LSM electrodes to the structural and electronic properties of Mn - these properties are expected to be of major importance for the electrocatalytic performance...

  20. Structural changes of electron and ion beam-deposited contacts in annealed carbon-based electrical devices

    KAUST Repository

    Batra, Nitin M; Patole, Shashikant P.; Abdelkader, Ahmed; Anjum, Dalaver H.; Deepak, Francis L; Da Costa, Pedro M. F. J.

    2015-01-01

    The use of electron and ion beam deposition to make devices containing discrete nanostructures as interconnectors is a well-known nanofabrication process. Classically, one-dimensional materials such as carbon nanotubes (CNTs) have been electrically characterized by resorting to these beam deposition methods. While much attention has been given to the interconnectors, less is known about the contacting electrodes (or leads). In particular, the structure and chemistry of the electrode–interconnector interface is a topic that deserves more attention, as it is critical to understand the device behavior. Here, the structure and chemistry of Pt electrodes, deposited either with electron or ion beams and contacted to a CNT, are analyzed before and after thermally annealing the device in a vacuum. Free-standing Pt nanorods, acting as beam-deposited electrode models, are also characterized pre- and post-annealing. Overall, the as-deposited leads contain a non-negligible amount of amorphous carbon that is consolidated, upon heating, as a partially graphitized outer shell enveloping a Pt core. This observation raises pertinent questions regarding the definition of electrode–nanostructure interfaces in electrical devices, in particular long-standing assumptions of metal-CNT contacts fabricated by direct beam deposition methods.

  1. Structural changes of electron and ion beam-deposited contacts in annealed carbon-based electrical devices

    KAUST Repository

    Batra, Nitin M

    2015-10-09

    The use of electron and ion beam deposition to make devices containing discrete nanostructures as interconnectors is a well-known nanofabrication process. Classically, one-dimensional materials such as carbon nanotubes (CNTs) have been electrically characterized by resorting to these beam deposition methods. While much attention has been given to the interconnectors, less is known about the contacting electrodes (or leads). In particular, the structure and chemistry of the electrode–interconnector interface is a topic that deserves more attention, as it is critical to understand the device behavior. Here, the structure and chemistry of Pt electrodes, deposited either with electron or ion beams and contacted to a CNT, are analyzed before and after thermally annealing the device in a vacuum. Free-standing Pt nanorods, acting as beam-deposited electrode models, are also characterized pre- and post-annealing. Overall, the as-deposited leads contain a non-negligible amount of amorphous carbon that is consolidated, upon heating, as a partially graphitized outer shell enveloping a Pt core. This observation raises pertinent questions regarding the definition of electrode–nanostructure interfaces in electrical devices, in particular long-standing assumptions of metal-CNT contacts fabricated by direct beam deposition methods.

  2. Structural changes of electron and ion beam-deposited contacts in annealed carbon-based electrical devices.

    Science.gov (United States)

    Batra, Nitin M; Patole, Shashikant P; Abdelkader, Ahmed; Anjum, Dalaver H; Deepak, Francis L; Costa, Pedro M F J

    2015-11-06

    The use of electron and ion beam deposition to make devices containing discrete nanostructures as interconnectors is a well-known nanofabrication process. Classically, one-dimensional materials such as carbon nanotubes (CNTs) have been electrically characterized by resorting to these beam deposition methods. While much attention has been given to the interconnectors, less is known about the contacting electrodes (or leads). In particular, the structure and chemistry of the electrode-interconnector interface is a topic that deserves more attention, as it is critical to understand the device behavior. Here, the structure and chemistry of Pt electrodes, deposited either with electron or ion beams and contacted to a CNT, are analyzed before and after thermally annealing the device in a vacuum. Free-standing Pt nanorods, acting as beam-deposited electrode models, are also characterized pre- and post-annealing. Overall, the as-deposited leads contain a non-negligible amount of amorphous carbon that is consolidated, upon heating, as a partially graphitized outer shell enveloping a Pt core. This observation raises pertinent questions regarding the definition of electrode-nanostructure interfaces in electrical devices, in particular long-standing assumptions of metal-CNT contacts fabricated by direct beam deposition methods.

  3. The electronic structures of solids

    CERN Document Server

    Coles, B R

    2013-01-01

    The Electronic Structures of Solids aims to provide students of solid state physics with the essential concepts they will need in considering properties of solids that depend on their electronic structures and idea of the electronic character of particular materials and groups of materials. The book first discusses the electronic structure of atoms, including hydrogen atom and many-electron atom. The text also underscores bonding between atoms and electrons in metals. Discussions focus on bonding energies and structures in the solid elements, eigenstates of free-electron gas, and electrical co

  4. Relationship between electronic structure and electric conductivity of double rhodium oxides from X-ray spectral data

    International Nuclear Information System (INIS)

    Firsov, M.N.; Nefedov, V.I.; Shaplygin, I.S.

    1983-01-01

    Quantum yield spectra of X-ray photoemission of O K - and Rh M 3 -bands of double rhodium oxides with Be, Mg, Ca, Sr, Ba, Cd, V, Nb, Ta, Mo, W are obtained. Quantum yield spectra are analogous to absorption spectra and reflect vacant states in a crystal, in particular, the quantum yield spectrum of O K-band is associated with oxygen vacant states of p-symmetry while Rh M 3 -band spectrum with rhomium vacant states of d-symmetry. In all rhodium compounds investigated the first vacant band is formed by the rhodium 4d-states. The forbidden zone between the last occupied and first free states of rhodiUm has a small width (eV fractions), which explains the semiconductor character of electric conductivity of the investigated compounds. Electric resistance variation in investigated series of rhodium compounds is in agreement with peculiarities of their electronic structure and entirely depends on variation in the electron density on rhodium atoms

  5. Crystalline and Electronic Structures and Magnetic and Electrical Properties of La-Doped Ca2Fe2O5 Compounds

    Science.gov (United States)

    Phan, T. L.; Tho, P. T.; Tran, N.; Kim, D. H.; Lee, B. W.; Yang, D. S.; Thiet, D. V.; Cho, S. L.

    2018-01-01

    Brownmillerite Ca2Fe2O5 has been observed to exhibit many outstanding properties that are applicable to ecotechnology. However, very little work on doped Ca2Fe2O5 compounds has been carried out to widen their application scope. We present herein a detailed study of the crystalline/geometric and electronic structures and magnetic and electrical properties of Ca2- x La x Fe2O5 ( x = 0 to 1) prepared by conventional solid-state reaction. X-ray diffraction patterns indicated that the compounds with x = 0 to 0.05 exhibited brownmillerite-type single phase. La doping with higher content ( x ≥ 0.1) stimulated additive formation of Grenier- (LaCa2Fe3O8) and perovskite-type (LaFeO3) phases. Extended x-ray absorption fine structure spectroscopy at the Fe K-edge and electron spin resonance spectroscopy revealed presence of Fe3+ in the parent Ca2Fe2O5 ( x = 0) and both Fe3+ and Fe4+ in the doped compounds ( x ≥ 0.05). The Fe4+ content tended to increase with increasing x. This stimulates ferromagnetic exchange interactions between Fe3+ and Fe4+ ions and directly influences the magnetic properties of Ca2- x La x Fe2O5. Electrical resistivity ( ρ) measurements in the temperature range of T = 20 K to 400 K revealed that all the compounds exhibit insulator behavior; the ρ( T) data for x ≥ 0.1 could be described based on the adiabatic small polaron hopping model.

  6. Structural and electrical properties of polycrystalline CdSe thin films, before and after irradiation with 6 MeV accelerated electrons

    International Nuclear Information System (INIS)

    Ion, L.; Antohe, V.A.; Tazlaoanu, C.; Antohe, S.; Scarlat, F.

    2004-01-01

    Structural and electrical properties of polycrystalline CdSe thin films irradiated with high-energy electrons are analyzed. The samples were prepared by vacuum deposition of CdSe powder onto optical glass substrate. Their structure and the temperature dependence of the electrical resistance were determined, both before and after irradiation with 6 MeV electrons at fluencies up to 10 16 electrons/cm 2 . There were no measurable changes in the crystalline structure of the films after irradiation. Electrical properties are controlled by the defect level of donor type, possibly a selenium vacancy, with two ionizing states having ionization energies of about 0.40 eV and 0.22 eV, respectively. The major effect of the irradiation is to increase significantly the concentration of these defects. (authors)

  7. Electrical/thermal transport and electronic structure of the binary cobalt pnictides CoPn2 (Pn = As and Sb

    Directory of Open Access Journals (Sweden)

    Yosuke Goto

    2015-06-01

    Full Text Available We demonstrate the electrical and thermal transport properties of polycrystalline CoPn2 (Pn = As and Sb between 300 and 900 K. CoAs2 shows semiconducting electrical transport up to 900 K, while CoSb2 exhibits degenerate conduction. Sign inversion of the Seebeck coefficient is observed at ∼310 and ∼400 K for CoAs2 and CoSb2, respectively. Thermal conductivity at 300 K is 11.7 Wm−1K−1 for CoAs2 and 9.4 Wm−1K−1 for CoSb2. The thermoelectric power factor of CoAs2 is ∼10 μWcm−1K−2, although the dimensionless figure of merit is limited to ∼0.1 due to relatively high thermal conductivity. Using electronic structure calculations, the band gap value is calculated to be 0.55 eV for CoAs2 and 0.26 eV for CoSb2.

  8. Understand electrical and electronics maths

    CERN Document Server

    Bishop, Owen

    1993-01-01

    Understand Electrical and Electronics Maths covers elementary maths and the aspects of electronics. The book discusses basic maths including quotients, algebraic fractions, logarithms, types of equations and balancing of equations. The text also describes the main features and functions of graphs and the solutions to simpler types of electronics problems. The book then tackles the applications of polar coordinates in electronics, limits, differentiation and integration, and the applications of maths of rates of change in electronics. The activities of an electronic circuit; techniques of math

  9. Waste Electrical and Electronic Equipment

    DEFF Research Database (Denmark)

    Bigum, Marianne Kristine Kjærgaard; Christensen, Thomas Højlund

    2011-01-01

    Waste electrical and electronic equipment (WEEE) is one of the fastest growing special waste types with an estimated growth of 3–5% per year (Cui and Forssberg, 2003). WEEE is a very heterogeneous waste type that contains many compounds that are considered to be harmful to both humans and the env......Waste electrical and electronic equipment (WEEE) is one of the fastest growing special waste types with an estimated growth of 3–5% per year (Cui and Forssberg, 2003). WEEE is a very heterogeneous waste type that contains many compounds that are considered to be harmful to both humans...

  10. Power Electronics and Electric Machines Facilities | Transportation

    Science.gov (United States)

    Research | NREL Facilities Power Electronics and Electric Machines Facilities NREL's power electronics and electric machines thermal management experimentation facilities feature a wide range of four researchers in discussion around a piece of laboratory equipment. Power electronics researchers

  11. Complex nano-patterning of structural, optical, electrical and electron emission properties of amorphous silicon thin films by scanning probe

    Czech Academy of Sciences Publication Activity Database

    Fait, Jan; Čermák, Jan; Stuchlík, Jiří; Rezek, Bohuslav

    2018-01-01

    Roč. 428, Jan (2018), s. 1159-1165 ISSN 0169-4332 R&D Projects: GA ČR GA15-01809S Institutional support: RVO:68378271 Keywords : amorphous silicon * nano-templates * nanostructures * electrical conductivity * electron emission * atomic force microscopy Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 3.387, year: 2016

  12. Experimental and theoretical investigation of the molecular, electronic structure and solvatochromism of phenyl salicylate: External electric field effect on the electronic structure

    Science.gov (United States)

    Sıdır, İsa; Sıdır, Yadigar Gülseven

    2017-11-01

    The UV-vis absorption and steady state fluorescence spectra of phenyl salicylate (abbreviated as PS) have been recorded in a series of non-polar, polar protic and polar aprotic solvents at room temperature and the obtained spectral data are used to determine the solvatochromic behavior and the ground and excited state dipole moments. Basis set sensitive molecular structure along with X-ray crystal data are evaluated. The ground state and excited state dipole moments are determined by using Lippert-Mataga, Bakhshiev, Bilot-Kawski and Reichardt solvatochromic shift methods as a function of dielectric constant (ε) and refractive index (n) of the solvents. The larger excited state dipole moment value indicates the more polar PS in the excited state. The rate of μe/μg is found as 2.4239. Solvatochromic behavior of PS is enlightened by using Kamlet-Taft and Catalan models. Kamlet-Taft solvatochromic model indicates that non-specific solute solvent interactions are controlled by solvent dispersion-induction forces and specific interactions are directed by hydrogen-bond donor capacity of solvent. Catalan solvatochromic model designates that solute-solvent interactions are governed by solvent polarizability. Ground and excited state dipole moments are found theoretically by using DFT/B3LYP/6-311++G(d, p) and TDDFT/B3LYP/6-31++G(d, p) methods. External electric field effect on LUMO-HOMO band gap and dipole moment have been investigated by using B3LYP/6-311++G(d, p) method.

  13. Power Electronics and Electric Machines Publications | Transportation

    Science.gov (United States)

    Research | NREL and Electric Machines Publications Power Electronics and Electric Machines Publications NREL and its partners have produced many papers and presentations related to power electronics and from power electronics and electric machines research are available to the public. Photo by Pat Corkery

  14. Relativistic Electrons in Electric Discharges

    DEFF Research Database (Denmark)

    Cinar, Deniz

    at the time when also gigantic electric discharges were observed at 10-90 km altitude in the stratosphere and mesosphere, the so called “jets” and “sprites”, commonly referred to as “Transient Luminous Events” (TLEs). TGFs were _rst thought connected to TLEs, but later research has pointed to lightning......Thunderstorms generate bursts of X- and Gamma radiation. When observed from spacecraft, the bursts are referred to as “Terrestrial Gamma-ray Flashes” (TGFs). They are bremsstrahlung from energetic electrons accelerated in thunderstorm electric _elds. The TGFs were _rst observed in the 90ties...... discharges as the source. The “Atmosphere-Space Interactions Monitor” (ASIM) for the International Space Station in 2016, led by DTU Space, and the French microsatellite TARANIS, also with launch in 2016, will identify with certainty the source of TGFs. In preparation for the missions, the Ph.D. project has...

  15. Electric circuit theory applied electricity and electronics

    CERN Document Server

    Yorke, R

    1981-01-01

    Electric Circuit Theory provides a concise coverage of the framework of electrical engineering. Comprised of six chapters, this book emphasizes the physical process of electrical engineering rather than abstract mathematics. Chapter 1 deals with files, circuits, and parameters, while Chapter 2 covers the natural and forced response of simple circuit. Chapter 3 talks about the sinusoidal steady state, and Chapter 4 discusses the circuit analysis. The fifth chapter tackles frequency response of networks, and the last chapter covers polyphase systems. This book will be of great help to electrical

  16. Transport properties of Dirac electrons in graphene based double velocity-barrier structures in electric and magnetic fields

    International Nuclear Information System (INIS)

    Liu, Lei; Li, Yu-Xian; Liu, Jian-Jun

    2012-01-01

    Using transfer matrix method, transport properties in graphene based double velocity-barrier structures under magnetic and electric fields are numerically studied. It is found that velocity barriers for the velocity ratio (the Fermi velocity inside the barrier to that outside the barrier) less than one (or for the velocity ratio greater than one) have properties similar to electrostatic wells (or barriers). The velocity barriers for the velocity ratio greater than one significantly enlarge the resonant tunneling region of electrostatic barriers. In the presence of magnetic field, the plateau width of the Fano factor with a Poissonian value shortens (or broadens) for the case of the velocity ratio less than one (or greater than one). When the Fermi energy is equal to the electrostatic barrier height, for different values of the velocity ratio, both the conductivities and the Fano factors remain fixed. -- Highlights: ► We model graphene based velocity-barrier structures in electric and magnetic fields. ► Velocity barrier for ξ 1) have property similar to electrostatic well (barrier). ► Velocity barrier for ξ>1 enlarge the resonant tunneling region of electrostatic barrier. ► The plateau width of Fano factor shortens (or broadens) for the case of ξ 1). ► The conductivity remains fixed at the point of E F =U 0 for different values of ξ.

  17. Section I: Basic Electricity. Syllabus in Trade Electricity-Electronics.

    Science.gov (United States)

    New York State Education Dept., Albany. Bureau of Occupational and Career Curriculum Development.

    This section describes the first of a three part curriculum in trade electricity-electronics (each part is described in a separate volume). It presents a unit of 6 to 10 weeks duration which develops only those competencies necessary to all electricity or electronics employment. A flow chart indicates how an individual student's program can be…

  18. Syllabus in Trade Electricity-Electronics. Section II. Trade Electricity.

    Science.gov (United States)

    New York State Education Dept., Albany. Bureau of Occupational Education Curriculum Development.

    This second section of a three-part syllabus for a flexible curriculum in trade electricity-electronics contains four semi-independent units: (1) Advanced Electricity, (2) Residential and Commercial Wiring, (3) Industrial Electricity, and (4) Motor Controls. Introductory sections describe development of the curriculum, outline the total trade…

  19. One dimensional CuO nanocrystals synthesis by electrical explosion: A study on structural, optical and electronic properties

    Energy Technology Data Exchange (ETDEWEB)

    Krishnan, Shutesh, E-mail: shutesh.k@onsemi.com [Department of Mechanical Engineering University of Malaya, 50603 Kuala Lumpur (Malaysia); ON Semiconductor Package Innovation and Development Center, 70450 Seremban (Malaysia); Haseeb, A.S.M.A.; Johan, Mohd Rafie [Department of Mechanical Engineering University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2014-02-15

    Highlights: • One-dimensional CuO nanoflakes were synthesized by novel wire explosion technique. • A physical synthesis method capable of producing high aspect ratio (1:16) nanocrystals. • Most energy efficient and eco-friendly synthesis of low-dimensional transition metal oxide nanocrystals. -- Abstract: One-dimensional (1D) copper oxide (CuO) nanocrystals were synthesized using a novel wire explosion in de-ionized (DI) water without any chemical additives. Highly crystalline 1D CuO nanocrystals with 1:16 aspect ratio were successfully synthesized using this technique. The chemical nature and physical structure of the nanocrystals were controlled by simply modulating the exploding medium temperature. The results showed that nanocrystals produced at explosion temperatures 65 °C and 95 °C are pure CuO with optical band-gap energy of 2.38 eV. High Resolution Transmission Electron Microscope analysis (HRTEM) indicates that the CuO nanocrystals are with growth in [1{sup ¯}11] and [1 1 1] directions. The epitaxial crystal growth kinetics of the 1D nanostructure by aggregation was discussed. The incorporation of microstructural features like edge dislocations and porosity in the growth mechanism was examined. X-ray photoelectron spectroscopy (XPS) characterization indicates the formation of high purity CuO nanocrystals with valence state +2. This study provides an energy efficient and eco-friendly synthesis method of 1D transition metal oxide nanocrystals for electronic applications.

  20. One dimensional CuO nanocrystals synthesis by electrical explosion: A study on structural, optical and electronic properties

    International Nuclear Information System (INIS)

    Krishnan, Shutesh; Haseeb, A.S.M.A.; Johan, Mohd Rafie

    2014-01-01

    Highlights: • One-dimensional CuO nanoflakes were synthesized by novel wire explosion technique. • A physical synthesis method capable of producing high aspect ratio (1:16) nanocrystals. • Most energy efficient and eco-friendly synthesis of low-dimensional transition metal oxide nanocrystals. -- Abstract: One-dimensional (1D) copper oxide (CuO) nanocrystals were synthesized using a novel wire explosion in de-ionized (DI) water without any chemical additives. Highly crystalline 1D CuO nanocrystals with 1:16 aspect ratio were successfully synthesized using this technique. The chemical nature and physical structure of the nanocrystals were controlled by simply modulating the exploding medium temperature. The results showed that nanocrystals produced at explosion temperatures 65 °C and 95 °C are pure CuO with optical band-gap energy of 2.38 eV. High Resolution Transmission Electron Microscope analysis (HRTEM) indicates that the CuO nanocrystals are with growth in [1 ¯ 11] and [1 1 1] directions. The epitaxial crystal growth kinetics of the 1D nanostructure by aggregation was discussed. The incorporation of microstructural features like edge dislocations and porosity in the growth mechanism was examined. X-ray photoelectron spectroscopy (XPS) characterization indicates the formation of high purity CuO nanocrystals with valence state +2. This study provides an energy efficient and eco-friendly synthesis method of 1D transition metal oxide nanocrystals for electronic applications

  1. Effects of Si δ-Doping Condition and Growth Interruption on Electrical Properties of InP-Based High Electron Mobility Transistor Structures

    International Nuclear Information System (INIS)

    Zhou Shu-Xing; Qi Ming; Ai Li-Kun; Xu An-Huai; Wang Li-Dan; Ding Peng; Jin Zhi

    2015-01-01

    The InGaAs/InAlAs/InP high electron mobility transistor (HEMT) structures with lattice-matched and pseudomorphic channels are grown by gas source molecular beam epitaxy. Effects of Si δ-doping condition and growth interruption on the electrical properties are investigated by changing the Si-cell temperature, doping time and growth process. It is found that the optimal Si δ-doping concentration (N_d) is about 5.0 × 10"1"2 cm"−"2 and the use of growth interruption has a dramatic effect on the improvement of electrical properties. The material structure and crystal interface are analyzed by secondary ion mass spectroscopy and high resolution transmission electron microscopy. An InGaAs/InAlAs/InP HEMT device with a gate length of 100 nm is fabricated. The device presents good pinch-off characteristics and the kink-effect of the device is trifling. In addition, the device exhibits f_T = 249 GHz and f_m_a_x > 400 GHz. (paper)

  2. Standardized Curriculum for Electricity/Electronics.

    Science.gov (United States)

    Mississippi State Dept. of Education, Jackson. Office of Vocational, Technical and Adult Education.

    Standardized vocational education course titles and core contents are provided for two courses in Mississippi: electricity/electronics I and II. The first course contains the following units: (1) orientation, safety, and leadership; (2) basic principles of electricity/electronics; (3) direct current (DC) theory; (4) magnetism and DC motors; (5)…

  3. Electrical and Electronics Technical Team Roadmap

    Energy Technology Data Exchange (ETDEWEB)

    None

    2013-06-01

    The Electrical and Electronics Technical Team’s (EETT's) mission is to enable cost-effective, smaller, lighter, and efficient power electronics and electric motors for electric traction drive systems (ETDSs) while maintaining performance of internal combustion engine (ICE)-based vehicles. The EETT also identifies technology gaps, establishes R&D targets, develops a roadmap to achieve technical targets and goals, and evaluates the R&D progress toward meeting the established R&D targets and goals.

  4. Shelf life of electronic/electrical devices

    International Nuclear Information System (INIS)

    Polanco, S.; Behera, A.K.

    1993-01-01

    This paper discusses inconsistencies which exist between various industry practices regarding the determination of shelf life for electrical and electronic components. New methodologies developed to evaluate the shelf life of electrical and electronic components are described and numerous tests performed at Commonwealth Edison Company's Central Receiving Inspection and Testing (CRIT) Facility are presented. Based upon testing and analysis using the Arrhenius methodology and typical materials used in the manufacturing of electrical and electronic components, shelf life of these devices was determined to be indefinite. Various recommendations to achieve an indefinite. Various recommendations to achieve an indefinite shelf life are presented to ultimately reduce inventory and operating costs at nuclear power plants

  5. Microelectronics in power electronics and electrical drives

    Energy Technology Data Exchange (ETDEWEB)

    1982-01-01

    From October, 1214, 1982 at Darmstadt (FRG) a meeting took place on ''Microelectronics in power electronics and Electrical Drives''. This volume contains the papers of the 65 lectures, held at the symposium. For each of the 10 papers dealing with problems on electric-powered vehicles a separate subject analysis has been carried out.

  6. A Curriculum Guide for Electricity/Electronics.

    Science.gov (United States)

    Rouse, Bill, Comp.

    This curriculum guide is designed to upgrade the secondary electrical trades program in Mississippi by broadening its scope to incorporate basic electronic principles. Covered in the individual chapters of the guide are the following courses: basic electricity (occupational information, basic physics, circuit fundamentals, resistance and Ohm's…

  7. Drafting method of electricity and electron design

    International Nuclear Information System (INIS)

    Gungbon, Junchun

    1989-11-01

    This book concentrates on drafting of electricity and electron design. It deals with The meaning of electricity and electron drafting JIS standard regulation the types of drafting and line and letter, basics drafting with projection drafting method, plan projection and development elevation, Drafting method of shop drawing, practical method of design and drafting, Design and drafting of technic and illustration, Connection diagram, Drafting of wiring diagram for light and illumination, Drafting of development connection diagram for sequence control, Drafting of logic circuit sign of flow chart and manual, drafting for a electron circuit diagram and Drawing of PC board.

  8. Electronic structure of silicene

    International Nuclear Information System (INIS)

    Voon, L. C. Lew Yan

    2015-01-01

    In this topical review, we discuss the electronic structure of free-standing silicene by comparing results obtained using different theoretical methods. Silicene is a single atomic layer of silicon similar to graphene. The interest in silicene is the same as for graphene, in being two-dimensional and possessing a Dirac cone. One advantage of silicene is due to its compatibility with current silicon electronics. Both empirical and first-principles techniques have been used to study the electronic properties of silicene. We will provide a brief overview of the parameter space for first-principles calculations. However, since the theory is standard, no extensive discussion will be included. Instead, we will emphasize what empirical methods can provide to such investigations and the current state of these theories. Finally, we will review the properties computed using both types of theories for free-standing silicene, with emphasis on areas where we have contributed. Comparisons to graphene is provided throughout. (topical review)

  9. Electronic band structure

    International Nuclear Information System (INIS)

    Grosso, G.

    1986-01-01

    The aim of this chapter is to present, in detail, some theoretical methods used to calculate electronic band structures in crystals. The basic strategies employed to attack the problem of electronic-structure calculations are presented. Successive sections present the basic formulations of the tight-binding, orthogonalized-plane-wave, Green'sfunction, and pseudopotential methods with a discussion of their application to perfect solids. Exemplifications in the case of a few selected problems provide further insight by the author into the physical aspects of the different methods and are a guide to the use of their mathematical techniques. A discussion is offered of completely a priori Hartree-Fock calculations and attempts to extend them. Special aspects of the different methods are also discussed in light of recently published related work

  10. Investigation of structural, optical, and electrical characteristics of an AlGaN/GaN high electron mobility transistor structure across a 200 mm Si(1 1 1) substrate

    International Nuclear Information System (INIS)

    Perozek, J; Lee, H-P; Bayram, C; Krishnan, B; Paranjpe, A; Reuter, K B; Sadana, D K

    2017-01-01

    An AlGaN/GaN high electron mobility transistor (HEMT) structure is grown on a 200 mm Si(1 1 1) substrate. The AlGaN/AlN/GaN heterostructure atop, which forms the 2D electron gas, is studied via transmission electron microscopy (TEM), scanning tunneling microscopy, and TEM chemical analysis. To quantify the uniformity of structural, optical, and electrical properties of these AlGaN/GaN HEMT structures, scanning electron microscopy, optical microscopy, atomic-force microscopy, x-ray diffraction ( ω /2 θ scan and reciprocal space mapping) and Hall effect measurements are employed across the center, middle, and edge of the 200 mm wafer. Small thickness (<3%) and Al-content (<3%) variations in (Al)GaN layers across the wafer are recorded whereas a considerable change (28%) in the electron mobility is observed across the wafer that correlates with variations in surface roughness, defectivity, and layer stress. We attribute the higher mobility in the middle of the wafer to lower interface scattering, thanks to lower surface roughness and less edge-type dislocation density. Additionally, argon (Ar) ion implantation is used as a means for planar electrical isolation, and a seven orders of magnitude decrease in leakage current is achieved when an optimum Ar dose of 10 13 cm −2 is used. The feasibility of scaling AlGaN/GaN HEMTs on a 200 mm Si(1 1 1) platform is discussed. (paper)

  11. Tunable electronic properties of silicon nanowires under strain and electric bias

    Directory of Open Access Journals (Sweden)

    Alexis Nduwimana

    2014-07-01

    Full Text Available The electronic structure characteristics of silicon nanowires under strain and electric bias are studied using first-principles density functional theory. The unique wire-like structure leads to distinct spatial distribution of carriers, which can be tailored by applying tensile and compressive strains, as well as by an electric bias. Our results indicate that the combined effect of strain and electric bias leads to tunable electronic structures that can be used for piezo-electric devices.

  12. Local electronic and electrical properties of functionalized graphene nano flakes

    International Nuclear Information System (INIS)

    Chutia, Arunabhiram; Sahnoun, Riadh; Deka, Ramesh C.; Zhu, Zhigang; Tsuboi, Hideyuki; Takaba, Hiromitsu; Miyamoto, Akira

    2011-01-01

    Based on experimental findings models of amorphous graphene related carbon materials were generated using graphene nano flakes. On the optimized structures detailed local electronic properties were investigated using density functional theory. The electrical conductivities of all these models were also estimated using an in-house program based on tight-binding method. The calculated electrical conductivity values of all the models agreed well with the trend of calculated energy gap and graphitic character.

  13. Inductance, electrically adjusted by semiconductor structure

    Directory of Open Access Journals (Sweden)

    Semenov А. А.

    2012-08-01

    Full Text Available A theoretical model of a passive flat inductor with electronic control is offered. Design charts of tank inductance and Q factor dependence on the forward bias voltage of n—i—p—i—n-structure, used as a specific core, the characteristics of which are regulated under the influence of an applied electric field, are presented. The comparison of design values with experimental features has shown their good correspondence with each other.

  14. Electrically induced spontaneous emission in open electronic system

    Science.gov (United States)

    Wang, Rulin; Zhang, Yu; Yam, Chiyung; Computation Algorithms Division (CSRC) Team; Theoretical; Computational Chemistry (HKU) Collaboration

    A quantum mechanical approach is formulated for simulation of electroluminescence process in open electronic system. Based on nonequilibrium Green's function quantum transport equations and combining with photon-electron interaction, this method is used to describe electrically induced spontaneous emission caused by electron-hole recombination. The accuracy and reliability of simulation depends critically on correct description of the electronic band structure and the electron occupancy in the system. In this work, instead of considering electron-hole recombination in discrete states in the previous work, we take continuous states into account to simulate the spontaneous emission in open electronic system, and discover that the polarization of emitted photon is closely related to its propagation direction. Numerical studies have been performed to silicon nanowire-based P-N junction with different bias voltage.

  15. Basura electrónica Electronic trash

    OpenAIRE

    Pedro Costa Morata

    2012-01-01

    Este texto es un comentario acerca del vídeo viral "Buy it, Use it, Break it, Junk it, it's Toxic" de la organización Greenpeace sobre el problema presentado por la “basura electrónica”, una amenaza ambiental relativamente reciente derivado del ingente consumo de aparatos electrónicos.This text is a comment about the viral video "Buy it, Use it, Break it, Junk it, it's Toxic", from Greenpeace, about the problem presented by the "electronic trash", a relatively recently environmental threat de...

  16. Epitaxial graphene electronic structure and transport

    International Nuclear Information System (INIS)

    De Heer, Walt A; Berger, Claire; Wu Xiaosong; Sprinkle, Mike; Hu Yike; Ruan Ming; First, Phillip N; Stroscio, Joseph A; Haddon, Robert; Piot, Benjamin; Faugeras, Clement; Potemski, Marek; Moon, Jeong-Sun

    2010-01-01

    Since its inception in 2001, the science and technology of epitaxial graphene on hexagonal silicon carbide has matured into a major international effort and is poised to become the first carbon electronics platform. A historical perspective is presented and the unique electronic properties of single and multilayered epitaxial graphenes on electronics grade silicon carbide are reviewed. Early results on transport and the field effect in Si-face grown graphene monolayers provided proof-of-principle demonstrations. Besides monolayer epitaxial graphene, attention is given to C-face grown multilayer graphene, which consists of electronically decoupled graphene sheets. Production, structure and electronic structure are reviewed. The electronic properties, interrogated using a wide variety of surface, electrical and optical probes, are discussed. An overview is given of recent developments of several device prototypes including resistance standards based on epitaxial graphene quantum Hall devices and new ultrahigh frequency analogue epitaxial graphene amplifiers.

  17. Dielectric materials electrization by fast electrons

    International Nuclear Information System (INIS)

    Dyrkov, V.A.; Kononov, B.A.

    1990-01-01

    Electrization of short-circuited high-ohmage targets under irradiation by 50-200 keV electrons non-uniformly by volume is investigated both experimentally and theoretically. The obtained data show that effect of space charge field increases monotonically up to stationary state during irradiation. Time constant for space charge accumulation constitutes 1-10 min and has lower value for polymethylmethacrylate as compared with polyethyleneterephthalate and decreases with increase of beam current density. Good agreement of experimental and theoretical results for both materials confirms the validity of main positions of phonomenological model of space charge formation in dielectric materials under fast electron irradiation

  18. Electron gun controlled smart structure

    Science.gov (United States)

    Martin, Jeffrey W.; Main, John Alan; Redmond, James M.; Henson, Tammy D.; Watson, Robert D.

    2001-01-01

    Disclosed is a method and system for actively controlling the shape of a sheet of electroactive material; the system comprising: one or more electrodes attached to the frontside of the electroactive sheet; a charged particle generator, disposed so as to direct a beam of charged particles (e.g. electrons) onto the electrode; a conductive substrate attached to the backside of the sheet; and a power supply electrically connected to the conductive substrate; whereby the sheet changes its shape in response to an electric field created across the sheet by an accumulation of electric charge within the electrode(s), relative to a potential applied to the conductive substrate. Use of multiple electrodes distributed across on the frontside ensures a uniform distribution of the charge with a single point of e-beam incidence, thereby greatly simplifying the beam scanning algorithm and raster control electronics, and reducing the problems associated with "blooming". By placing a distribution of electrodes over the front surface of a piezoelectric film (or other electroactive material), this arrangement enables improved control over the distribution of surface electric charges (e.g. electrons) by creating uniform (and possibly different) charge distributions within each individual electrode. Removal or deposition of net electric charge can be affected by controlling the secondary electron yield through manipulation of the backside electric potential with the power supply. The system can be used for actively controlling the shape of space-based deployable optics, such as adaptive mirrors and inflatable antennae.

  19. The role of specific features of the electronic structure in electrical resistivity of band ferromagnets Co2Fe Z ( Z = Al, Si, Ga, Ge, In, Sn, Sb)

    Science.gov (United States)

    Kourov, N. I.; Marchenkov, V. V.; Perevozchikova, Yu. A.; Weber, H. W.

    2017-05-01

    The electrical resistivity ρ( T) of the band ferromagnets Co2FeZ (where Z = Al, Si, Ga, Ge, In, Sn, and Sb are s- and p-elements of Mendeleev's Periodic Table) has been investigated in the temperature range 4.2 K < T < 1100 K. It has been shown that the dependences ρ( T) of these alloys in a magnetically ordered state at temperatures T < T C are predominantly determined by the specific features of the electronic spectrum in the vicinity of the Fermi level. The processes of charge carrier scattering affect the behavior of the electrical resistivity ρ( T) only in the vicinity of the Curie temperature T C and above, as well as in the low-temperature range (at T ≪ T C).

  20. Effect of magnetic and electric coupling fields on micro- and nano- structure of carbon films in the CVD diamond process and their electron field emission property

    Science.gov (United States)

    Wang, Yijia; Li, Jiaxin; Hu, Naixiu; Jiang, Yunlu; Wei, Qiuping; Yu, Zhiming; Long, Hangyu; Zhu, Hekang; Xie, Youneng; Ma, Li; Lin, Cheng-Te; Su, Weitao

    2018-03-01

    In this paper, both electric field and magnetic field were used to assist the hot filament chemical vapor deposition (HFCVD) and we systematically investigated the effects of which on the (1) phase composition, (2) grain size, (3) thickness and (4) preferred orientation of diamond films through SEM, Raman and XRD. The application of magnetic field in electric field, so called ‘the magnetic and electric coupling fields’, enhanced the graphitization and refinement of diamond crystals, slowed down the decrease of film thickness along with the increase of bias current, and suppressed diamond (100) orientation. During the deposition process, the electric field provided additional energy to HFCVD system and generated large number of energetic particles which might annihilate at the substrate and lose kinetic energy, while the Lorentz force, provided by magnetic field, could constrict charged particles (including electrons) to do spiral movement, which prolonged their moving path and life, thus the system energy increased. With the graphitization of diamond films intensified, the preferred orientation of diamond films completely evolved from (110) to (100), until the orientation and diamond phase disappeared, which can be attributed to (I) the distribution and concentration ratio of carbon precursors (C2H2 and CH3) and (II) graphitization sequence of diamond crystal facets. Since the electron field emission property of carbon film is sensitive to the phase composition, thickness and preferred orientation, nano- carbon cones, prepared by the negative bias current of 20 mA and magnetic field strength of 80 Gauss, exhibited the lowest turn-on field of 6.1 V -1 μm-1.

  1. Fabrication and electric measurements of nanostructures inside transmission electron microscope

    International Nuclear Information System (INIS)

    Chen, Qing; Peng, Lian-Mao

    2011-01-01

    Using manipulation holders specially designed for transmission electron microscope (TEM), nanostructures can be characterized, measured, modified and even fabricated in-situ. In-situ TEM techniques not only enable real-time study of structure-property relationships of materials at atomic scale, but also provide the ability to control and manipulate materials and structures at nanoscale. This review highlights in-situ electric measurements and in-situ fabrication and structure modification using manipulation holder inside TEM. -- Research highlights: → We review in-situ works using manipulation holder in TEM. → In-situ electric measurements, fabrication and structure modification are focused. → We discuss important issues that should be considered for reliable results. → In-situ TEM is becoming a very powerful tool for many research fields.

  2. Electrical and electronic principles and technology

    CERN Document Server

    John Bird

    2013-01-01

    This much-loved textbook introduces electrical and electronic principles and technology to students who are new to the subject. Real-world situations and engineering examples put the theory into context. The inclusion of worked problems with solutions really help aid your understanding and further problems then allow you to test and confirm you have mastered each subject. In total the books contains 410 worked problems, 540 further problems, 340 multiple-choice questions, 455 short-answer questions, and 7 revision tests with answers online.This an ideal text for vocational courses enabling a s

  3. Fabrication and electric measurements of nanostructures inside transmission electron microscope.

    Science.gov (United States)

    Chen, Qing; Peng, Lian-Mao

    2011-06-01

    Using manipulation holders specially designed for transmission electron microscope (TEM), nanostructures can be characterized, measured, modified and even fabricated in-situ. In-situ TEM techniques not only enable real-time study of structure-property relationships of materials at atomic scale, but also provide the ability to control and manipulate materials and structures at nanoscale. This review highlights in-situ electric measurements and in-situ fabrication and structure modification using manipulation holder inside TEM. Copyright © 2011 Elsevier B.V. All rights reserved.

  4. Power Electronics and Electric Machines | Transportation Research | NREL

    Science.gov (United States)

    Power Electronics and Electric Machines NREL's power electronics and electric machines research helping boost the performance of power electronics components and systems, while driving down size, weight technical barriers to EDV commercialization. EDVs rely heavily on power electronics to distribute the proper

  5. Electronic structure of superlattices

    International Nuclear Information System (INIS)

    Altarelli, M.

    1987-01-01

    Calculations of electronic states in semiconductor superlattices are briefly reviewed, with emphasis on the envelope-function method and on comparison with experiments. The energy levels in presence of external magnetic fields are discussed and compared to magneto-optical experiments. (author) [pt

  6. Thermal Management of Power Electronics and Electric Motors for Electric-Drive Vehicles (Presentation)

    Energy Technology Data Exchange (ETDEWEB)

    Narumanchi, S.

    2014-09-01

    This presentation is an overview of the power electronics and electric motor thermal management and reliability activities at NREL. The focus is on activities funded by the Department of Energy Vehicle Technologies Office Advanced Power Electronics and Electric Motors Program.

  7. Electronic structure of alloys

    International Nuclear Information System (INIS)

    Ehrenreich, H.; Schwartz, L.M.

    1976-01-01

    The description of electronic properties of binary substitutional alloys within the single particle approximation is reviewed. Emphasis is placed on a didactic exposition of the equilibrium properties of the transport and magnetic properties of such alloys. Topics covered include: multiple scattering theory; the single band alloy; formal extensions of the theory; the alloy potential; realistic model state densities; the s-d model; and the muffin tin model. 43 figures, 3 tables, 151 references

  8. Electronics for Piezoelectric Smart Structures

    Science.gov (United States)

    Warkentin, D. J.; Tani, J.

    1997-01-01

    This paper briefly presents work addressing some of the basic considerations for the electronic components used in smart structures incorporating piezoelectric elements. After general remarks on the application of piezoelectric elements to the problem of structural vibration control, three main topics are described. Work to date on the development of techniques for embedding electronic components within structural parts is presented, followed by a description of the power flow and dissipation requirements of those components. Finally current work on the development of electronic circuits for use in an 'active wall' for acoustic noise is introduced.

  9. Tariff structures for the transport of electricity

    International Nuclear Information System (INIS)

    Frenken, R.M.L.; Van de Water, C.J.

    1995-01-01

    Some possible tariff structures for electricity transport are discussed. First, the costs associated with the transport of electricity are explained. The fixed and variable costs of a transport are illustrated with some examples. Furthermore, the most common tariff structures (contract path, megawatt mile, postage stamp) and negotiated Third Party Access are discussed. Finally, the way the tariff structures reflect the costs of electricity transport are reviewed. 3 figs., 1 tab., 7 refs

  10. Influence of electron beam irradiation on electrical, structural, magnetic and thermal properties of Pr{sub 0.8}Sr{sub 0.2}MnO{sub 3} manganites

    Energy Technology Data Exchange (ETDEWEB)

    Christopher, Benedict [Department of Physics, Manipal Institute of Technology, Manipal University, Manipal 576104 (India); Rao, Ashok, E-mail: ashokanu_rao@rediffmail.com [Department of Physics, Manipal Institute of Technology, Manipal University, Manipal 576104 (India); Petwal, Vikash Chandra; Verma, Vijay Pal; Dwivedi, Jishnu [Industrial Accelerator Section, PSIAD, Raja Ramanna Centre for Advanced Technology, Indore 452012, M.P. (India); Lin, W.J. [Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan (China); Kuo, Y.-K., E-mail: ykkuo@mail.ndhu.edu.tw [Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan (China)

    2016-12-01

    In this communication, the effect of electron beam (EB) irradiation on the structural, electrical transport and thermal properties of Pr{sub 0.8}Sr{sub 0.2}MnO{sub 3} manganites has been investigated. Rietveld refinement of XRD data reveals that all samples are single phased with orthorhombic distorted structure (Pbnm). It is observed that the orthorhombic deformation increases with EB dosage. The Mn–O–Mn bond angle is found to increase with increase in EB dosage, presumably due to strain induced by these irradiations. Analysis on the measured electrical resistivity data indicates that the small polaron hopping model is operative in the high temperature region for pristine as well as EB irradiated samples. The electrical resistivity in the entire temperature region has been successfully fitted with the phenomenological percolation model which is based on phase segregation of ferromagnetic metallic clusters and paramagnetic insulating regions. The Seebeck coefficient (S) of the pristine as well as the irradiated samples exhibit positive values, indicating that holes is the dominant charge carriers. The analysis of Seebeck coefficient data confirms that the small polaron hopping mechanism governs the thermoelectric transport in the high temperature region. In addition, Seebeck coefficient data also is well fitted with the phenomenological percolation model. The behavior in thermal conductivity at the transition is ascribed to the local anharmonic distortions associated with small polarons. Specific heat measurement indicates that electron beam irradiation enhances the magnetic inhomogeneity of the system.

  11. Electronically commutated dc motors for electric vehicles

    Science.gov (United States)

    Maslowski, E. A.

    1981-01-01

    A motor development program to explore the feasibility of electronically commutated dc motors (also known as brushless) for electric cars is described. Two different design concepts and a number of design variations based on these concepts are discussed. One design concept is based on a permanent magnet, medium speed, machine rated at 7000 to 9000 rpm, and powered via a transistor inverter power conditioner. The other concept is based on a permanent magnet, high speed, machine rated at 22,000 to 26,000 rpm, and powered via a thyristor inverter power conditioner. Test results are presented for a medium speed motor and a high speed motor each of which have been fabricated using samarium cobalt permanent magnet material.

  12. Electronic structure of silicon superlattices

    International Nuclear Information System (INIS)

    Krishnamurthy, S.; Moriarty, J.A.

    1984-01-01

    Utilizing a new complex-band-structure technique, the electronic structure of model Si-Si/sub 1-x/Ge/sub x/ and MOS superlattices has been obtained over a wide range of layer thickness d (11 less than or equal to d less than or equal to 110 A). For d greater than or equal to 44 A, it is found that these systems exhibit a direct fundamental band gap. Further calculations of band-edge effective masses and impurity scattering rates suggest the possibility of a band-structure-driven enhancement in electron mobility over bulk silicon

  13. ECAP-370/IFIN - A program for the analysis of electrical and electronic circuits

    International Nuclear Information System (INIS)

    Marinescu, C.D.

    1978-05-01

    A program to be used as a tool for electrical and electronic circuit design is presented. The program performs the DC, AC, and transient analysis for circuits with a given topological structure. (author)

  14. Hole burning with pressure and electric field: A window on the electronic structure and energy transfer dynamics of bacterial antenna complexes

    Energy Technology Data Exchange (ETDEWEB)

    Wu, H.M.

    1999-02-12

    Light-harvesting (LH) complexes of cyclic (C{sub n}) symmetry from photosynthetic bacteria are studied using absorption and high pressure- and Stark-hole burning spectroscopies. The B800 absorption band of LH2 is inhomogeneously broadened while the B850 band of LH2 and the B875 band of the LH1 complex exhibit significant homogeneous broadening due to ultra-fast inter-exciton level relaxation. The B800{r_arrow}B850 energy transfer rate of ({approximately}2 ps){sup {minus}1} as determined by hole burning and femtosecond pump-probe spectroscopies, is weakly dependent on pressure and temperature, both of which significantly affect the B800-B850 energy gap. The resilience is theoretically explained in terms of a modified Foerster theory with the spectral overlap provided by the B800 fluorescence origin band and weak vibronic absorption bands of B850. Possible explanations for the additional sub-picosecond relaxation channel of B800 observed with excitation on the blue side of B800 are given. Data from pressure and temperature dependent studies show that the B800 and B850 bacteriochlorophyll a (BChl a) molecules are weakly and strongly excitonically coupled, respectively, which is consistent with the X-ray structure of LH2. The B875 BChl a molecules are also strongly coupled. It is concluded that electron-exchange, in addition to electrostatic interactions, is important for understanding the strong coupling of the B850 and B875 rings. The large linear pressure shifts of {approximately}{minus}0.6 cm{sup {minus}1}/MPa associated with B850 and B875 can serve as important benchmarks for electronic structure calculations.

  15. Electronic structure and correlation effects in actinides

    International Nuclear Information System (INIS)

    Albers, R.C.

    1998-01-01

    This report consists of the vugraphs given at a conference on electronic structure. Topics discussed are electronic structure, f-bonding, crystal structure, and crystal structure stability of the actinides and how they are inter-related

  16. Ballistic transport and electronic structure

    NARCIS (Netherlands)

    Schep, Kees M.; Kelly, Paul J.; Bauer, Gerrit E.W.

    1998-01-01

    The role of the electronic structure in determining the transport properties of ballistic point contacts is studied. The conductance in the ballistic regime is related to simple geometrical projections of the Fermi surface. The essential physics is first clarified for simple models. For real

  17. The Electronic Structure of Calcium

    DEFF Research Database (Denmark)

    Jan, J.-P.; Skriver, Hans Lomholt

    1981-01-01

    The electronic structure of calcium under pressure is re-examined by means of self-consistent energy band calculations based on the local density approximation and using the linear muffin-tin orbitals (LMTO) method with corrections to the atomic sphere approximation included. At zero pressure...

  18. Electronic structure of metal clusters

    International Nuclear Information System (INIS)

    Wertheim, G.K.

    1989-01-01

    Photoemission spectra of valence electrons in metal clusters, together with threshold ionization potential measurements, provide a coherent picture of the development of the electronic structure from the isolated atom to the large metallic cluster. An insulator-metal transition occurs at an intermediate cluster size, which serves to define the boundary between small and large clusters. Although the outer electrons may be delocalized over the entire cluster, a small cluster remains insulating until the density of states near the Fermi level exceeds 1/kT. In large clusters, with increasing cluster size, the band structure approaches that of the bulk metal. However, the bands remain significantly narrowed even in a 1000-atom cluster, giving an indication of the importance of long-range order. The core-electron binding-energy shifts of supported metal clusters depend on changes in the band structure in the initial state, as well as on various final-state effects, including changes in core hole screening and the coulomb energy of the final-state charge. For cluster supported on amorphous carbon, this macroscopic coulomb shift is often dominant, as evidenced by the parallel shifts of the core-electron binding energy and the Fermi edge. Auger data confirm that final-state effects dominate in cluster of Sn and some other metals. Surface atom core-level shifts provide a valuable guide to the contributions of initial-state changes in band structure to cluster core-electron binding energy shifts, especially for Au and Pt. The available data indicate that the shift observed in supported, metallic clusters arise largely from the charge left on the cluster by photoemission. As the metal-insulator transition is approached from above, metallic screening is suppressed and the shift is determined by the local environment. (orig.)

  19. Nanoscale electron manipulation in metals with intense THz electric fields

    Science.gov (United States)

    Takeda, Jun; Yoshioka, Katsumasa; Minami, Yasuo; Katayama, Ikufumi

    2018-03-01

    Improved control over the electromagnetic properties of metals on a nanoscale is crucial for the development of next-generation nanoelectronics and plasmonic devices. Harnessing the terahertz (THz)-electric-field-induced nonlinearity for the motion of electrons is a promising method of manipulating the local electromagnetic properties of metals, while avoiding undesirable thermal effects and electronic transitions. In this review, we demonstrate the manipulation of electron delocalization in ultrathin gold (Au) films with nanostructures, by intense THz electric-field transients. On increasing the electric-field strength of the THz pulses, the transmittance in the THz-frequency region abruptly decreases around the percolation threshold. The observed THz-electric-field-induced nonlinearity is analysed, based on the Drude-Smith model. The results suggest that ultrafast electron delocalization occurs by electron tunnelling across the narrow insulating bridge between the Au nanostructures, without material breakdown. In order to quantitatively discuss the tunnelling process, we perform scanning tunnelling microscopy with carrier-envelope phase (CEP)-controlled single-cycle THz electric fields. By applying CEP-controlled THz electric fields to the 1 nm nanogap between a metal nanotip and graphite sample, many electrons could be coherently driven through the quantum tunnelling process, either from the nanotip to the sample or vice versa. The presented concept, namely, electron tunnelling mediated by CEP-controlled single-cycle THz electric fields, can facilitate the development of nanoscale electron manipulation, applicable to next-generation ultrafast nanoelectronics and plasmonic devices.

  20. ELECTRON ACCELERATION BY CASCADING RECONNECTION IN THE SOLAR CORONA. II. RESISTIVE ELECTRIC FIELD EFFECTS

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, X.; Gan, W.; Liu, S. [Key Laboratory of Dark Matter and Space Astronomy, Purple Mountain Observatory, Chinese Academy of Sciences, Nanjing 210008 (China); Büchner, J.; Bárta, M., E-mail: zhou@mps.mpg.de, E-mail: liusm@pmo.ac.cn, E-mail: buechner@mps.mpg.de [Max Planck Institute for Solar System Research, Justus-von-Liebig-Weg 3, D-37077 Göttingen (Germany)

    2016-08-20

    We investigate electron acceleration by electric fields induced by cascading reconnections in current sheets trailing coronal mass ejections via a test particle approach in the framework of the guiding-center approximation. Although the resistive electric field is much weaker than the inductive electric field, the electron acceleration is still dominated by the former. Anomalous resistivity η is switched on only in regions where the current carrier’s drift velocity is large enough. As a consequence, electron acceleration is very sensitive to the spatial distribution of the resistive electric fields, and electrons accelerated in different segments of the current sheet have different characteristics. Due to the geometry of the 2.5-dimensional electromagnetic fields and strong resistive electric field accelerations, accelerated high-energy electrons can be trapped in the corona, precipitating into the chromosphere or escaping into interplanetary space. The trapped and precipitating electrons can reach a few MeV within 1 s and have a very hard energy distribution. Spatial structure of the acceleration sites may also introduce breaks in the electron energy distribution. Most of the interplanetary electrons reach hundreds of keV with a softer distribution. To compare with observations of solar flares and electrons in solar energetic particle events, we derive hard X-ray spectra produced by the trapped and precipitating electrons, fluxes of the precipitating and interplanetary electrons, and electron spatial distributions.

  1. Photodetachment electron flux of H− in combined electric and magnetic fields with arbitrary orientation

    International Nuclear Information System (INIS)

    Wang, De-hua

    2013-01-01

    Highlights: •On the basis of the semiclassical theory, the photodetachment electron flux of H − in combined electric field and magnetic field with arbitrary orientation has been studied for the first time. •Our calculation results suggest that the electron flux distributions on the detector plane is not only related to the angle between the electric and magnetic fields, but also related to the electron energy. •Our studies may guide the future experimental researches in the photodetachment microscopy of some more complex negative ions in the presence of external fields. -- Abstract: On the basis of the semi-classical theory, we calculate the photodetachment electron flux of H − in combined electric field and magnetic field with arbitrary orientation. Our results suggest that the electron flux distributions on the detector plane is not only related to the angle between the electric and magnetic fields, but also related to the electron energy. With the increase of the angle between the electric and magnetic field, the oscillating region in the electron flux distributions becomes smaller. In addition, we find with the increase of the detached electron's energy, the oscillating structure in the flux distributions becomes much more complicated. Therefore, the oscillation in the detached electron flux distributions can be controlled by adjusting the angle between the electric and magnetic field and the detached electron's energy. We hope that our studies may guide the future experimental researches in the photodetachment microscopy of negative ion in the presence of external fields

  2. Power electronics and electric machinery challenges and opportunities in electric and hybrid vehicles

    Energy Technology Data Exchange (ETDEWEB)

    Adams, D.J.; Hsu, J.S.; Young, R.W. [Oak Ridge National Lab., TN (United States); Peng, F.Z. [Univ. of Tennessee, Knoxville, TN (United States)

    1997-06-01

    The development of power electronics and electric machinery presents significant challenges to the advancement of electric and hybrid vehicles. Electronic components and systems development for vehicle applications have progressed from the replacement of mechanical systems to the availability of features that can only be realized through interacting electronic controls and devices. Near-term applications of power electronics in vehicles will enable integrated powertrain controls, integrated chassis system controls, and navigation and communications systems. Future applications of optimized electric machinery will enable highly efficient and lightweight systems. This paper will explore the areas where research and development is required to ensure the continued development of power electronics and electric machines to meet the rigorous demands of automotive applications. Additionally, recent advances in automotive related power electronics and electric machinery at Oak Ridge National Laboratory will be explained. 3 refs., 5 figs.

  3. Advanced Power Electronics and Electric Motors Annual Report -- 2013

    Energy Technology Data Exchange (ETDEWEB)

    Narumanchi, S. [National Renewable Energy Lab. (NREL), Golden, CO (United States); Bennion, K. [National Renewable Energy Lab. (NREL), Golden, CO (United States); DeVoto, D. [National Renewable Energy Lab. (NREL), Golden, CO (United States); Moreno, G. [National Renewable Energy Lab. (NREL), Golden, CO (United States); Rugh, J. [National Renewable Energy Lab. (NREL), Golden, CO (United States); Waye, S. [National Renewable Energy Lab. (NREL), Golden, CO (United States)

    2015-01-01

    This report describes the research into advanced liquid cooling, integrated power module cooling, high temperature air cooled power electronics, two-phase cooling for power electronics, and electric motor thermal management by NREL's Power Electronics group in FY13.

  4. Global Electricity Trade Network: Structures and Implications

    Science.gov (United States)

    Ji, Ling; Jia, Xiaoping; Chiu, Anthony S. F.; Xu, Ming

    2016-01-01

    Nations increasingly trade electricity, and understanding the structure of the global power grid can help identify nations that are critical for its reliability. This study examines the global grid as a network with nations as nodes and international electricity trade as links. We analyze the structure of the global electricity trade network and find that the network consists of four sub-networks, and provide a detailed analysis of the largest network, Eurasia. Russia, China, Ukraine, and Azerbaijan have high betweenness measures in the Eurasian sub-network, indicating the degrees of centrality of the positions they hold. The analysis reveals that the Eurasian sub-network consists of seven communities based on the network structure. We find that the communities do not fully align with geographical proximity, and that the present international electricity trade in the Eurasian sub-network causes an approximately 11 million additional tons of CO2 emissions. PMID:27504825

  5. 2012 International Conference on Electrical and Electronics Engineering

    CERN Document Server

    Chen, Suting; Wei, Zhanming; Xia, Jingming

    2014-01-01

    Unifying Electrical Engineering and Electronics Engineering is based on the Proceedings of the 2012 International Conference on Electrical and Electronics Engineering (ICEE 2012). This book collects the peer reviewed papers presented at the conference. The aim of the conference is to unify the two areas of Electrical and Electronics Engineering. The book examines trends and techniques in the field as well as theories and applications. The editors have chosen to include the following topics; biotechnology, power engineering, superconductivity circuits, antennas technology, system architectures and telecommunication.

  6. Electronic structure of lanthanide scandates

    Science.gov (United States)

    Mizzi, Christopher A.; Koirala, Pratik; Marks, Laurence D.

    2018-02-01

    X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and density functional theory calculations were used to study the electronic structure of three lanthanide scandates: GdSc O3,TbSc O3 , and DySc O3 . X-ray photoelectron spectra simulated from first-principles calculations using a combination of on-site hybrid and GGA +U methods were found to be in good agreement with experimental x-ray photoelectron spectra. The hybrid method was used to model the ground state electronic structure and the GGA +U method accounted for the shift of valence state energies due to photoelectron emission via a Slater-Janak transition state approach. From these results, the lanthanide scandate valence bands were determined to be composed of Ln 4 f ,O 2 p , and Sc 3 d states, in agreement with previous work. However, contrary to previous work the minority Ln 4 f states were found to be located closer to, and in some cases at, the valence band maximum. This suggests that minority Ln 4 f electrons may play a larger role in lanthanide scandate properties than previously thought.

  7. Synthesis and characterization of electrical conducting nanoporous carbon structures

    International Nuclear Information System (INIS)

    El Mir, L.; Kraiem, S.; Bengagi, M.; Elaloui, E.; Ouederni, A.; Alaya, S.

    2007-01-01

    Nanoporous organic xerogel compounds were prepared by sol-gel method from pyrogallol-formaldehyde (PF) mixtures in water using perchloric acid as catalyst. The preparation conditions of electrical conducting carbon (ECC) structures were explored by changing the pyrolysis temperature. The effect of this preparation parameters on the structural and electrical properties of the obtained ECCs were studied, respectively, by thermogravimetric analysis (TGA), nitrogen adsorption isotherms, IR spectroscopy and electrical conductivity measurements. The analysis of the obtained results revealed that, the polymeric insulating phase was transformed progressively with pyrolysis temperature into carbon conducting phase; this means the formation of long continuous conducting path for charge carriers when the carbon microparticles inside the structure agglomerated with thermal treatment and the samples exhibited tangible percolation behaviour where the percolation threshold can be determined by pyrolysis temperature. The temperature-dependent conductivity and the I(V) characteristics of the obtained ECC structures show a non-ohmic behaviour. The results obtained from TGA and differential thermal analyser (DTA) thermograms, scanning electron microscope (SEM) and transmission electron microscope (TEM) micrographs, IR spectroscopy and X-ray diffraction revealed that, the obtained ECC structures consist of amorphous and nanoporous electrical conducting carbon materials

  8. Nanowire structures and electrical devices

    Science.gov (United States)

    Bezryadin, Alexey; Remeika, Mikas

    2010-07-06

    The present invention provides structures and devices comprising conductive segments and conductance constricting segments of a nanowire, such as metallic, superconducting or semiconducting nanowire. The present invention provides structures and devices comprising conductive nanowire segments and conductance constricting nanowire segments having accurately selected phases including crystalline and amorphous states, compositions, morphologies and physical dimensions, including selected cross sectional dimensions, shapes and lengths along the length of a nanowire. Further, the present invention provides methods of processing nanowires capable of patterning a nanowire to form a plurality of conductance constricting segments having selected positions along the length of a nanowire, including conductance constricting segments having reduced cross sectional dimensions and conductance constricting segments comprising one or more insulating materials such as metal oxides.

  9. Electric field with bipolar structure during magnetic reconnection without a guide field

    Science.gov (United States)

    Guo, Jun

    2014-05-01

    We present a study on the polarized electric field during the collisionless magnetic reconnection of antiparallel fields using two dimensional particle-in-cell simulations. The simulations demonstrate clearly that electron holes and electric field with bipolar structure are produced during magnetic reconnection without a guide field. The electric field with bipolar structure can be found near the X-line and on the separatrix and the plasma sheet boundary layer, which is consistent with the observations. These structures will elongate electron's time staying in the diffusion region. In addition, the electric fields with tripolar structures are also found in our simulation.

  10. 2nd International Conference on Electric and Electronics (EEIC 2012)

    CERN Document Server

    Advances in Electric and Electronics

    2012-01-01

    This volume contains 108 full length papers presented at the 2nd International Conference on Electric and Electronics (EEIC 2012), held on April 21-22 in Sanya, China, which brings together researchers working in many different areas of education and learning to foster international collaborations and exchange of new ideas. This volume can be divided into two sections on the basis of the classification of manuscripts considered: the first section deals with Electric and the second section with Electronics.

  11. Synthesis, structural and electrical characterizations of thermally ...

    African Journals Online (AJOL)

    Synthesis, structural and electrical characterizations of thermally evaporated Cu 2 SnS 3 thin films. ... The surface profilometer shows that the deposited films are rough. The XRD spectra identified the ... The electrical resistivity of the deposited Cu2SnS3 film is 2.55 x 10-3 Ωcm. The conductivity is in the order of 103 Ω-1cm-1.

  12. Electric dipole moment of the electron and of the neutron

    Science.gov (United States)

    Barr, S. M.; Zee, A.

    1990-01-01

    It is shown that if Higgs-boson exchange mediates CP violation a significant electric dipole moment for the electron can result. Analogous effects can contribute to the neutron's electric dipole moment at a level competitive with Weinberg's three-gluon operator.

  13. The electrical conductivity of an interacting electron gas

    International Nuclear Information System (INIS)

    Kojima, D.Y.

    1977-01-01

    A manybody theory by the propagator method developed by Montroll and Ward for the equilibrium statistical mechanics, is reformulated to describe the electrical conductivity for an electron gas system containing impurity. The theory includes electron-impurity interaction to the infinite order and electron-electron interaction to the first order exchange effect. The propagator used by Montroll and Ward is separated into two propagators, each of which satisfies either Bloch or Schroedinger equation, to utilize the perturbation method. Correct counting of graphs are presented. Change in the relaxation time due to the electron-electron interaction is explicity shown and compared with recent works [pt

  14. Continuous Improvement and its Barriers in Electrical and Electronic Industry

    Directory of Open Access Journals (Sweden)

    Ahmad Md Fauzi

    2017-01-01

    Full Text Available Continuous improvement is one of the core strategies for manufacturing excellent and it is considered vital in today’s business environment. Continuous improvement is an important factor in TQM implementation. However, manufacturers in Electrical and Electronic Industry is facing variety of challenges such as, time constraint, quality issue, headcount issue, human issue and competition in domestic as well as the global market. This paper presents total quality management practices in Electrical and Electronic (EE Industry. These manufacturers have to keep improving in key activities and processes to cope the challenges. Therefore, EE industry realize the importance of continuous improvement in helping the industries by setting clear goals and priorities for the area of improvement. The aims of this study are to determine the main factor in implementing continuous improvement practices, identify tools of continuous improvement that have been used and their obstacle in implementing continuous improvement practices. 200 questionnaires had been distributed to the employees in Electrical and Electronic Industry located at Bayan Lepas, Penang, Malaysia. A total of 41 questionnaires were answered which represented about 20.5% response rates. Survey result shows that teamwork and training and learning are respectively the importance factor and the most practices factor in Electrical and Electronic Industry. Most of the Electrical and Electronic Industry emphasis is on using Lean Manufacturing as the tool of continuous improvement practices. Besides that, Electrical and Electronic Industry faced the problems of lack of budget and lack of worker commitment.

  15. Introduction to electrical power and power electronics

    CERN Document Server

    Patel, Mukund R

    2012-01-01

    Power Generation, Distribution, and Utilization AC Power Fundamentals Common Aspects of Power Equipments AC Generator AC and DC Motors Transformer Power Cable Power Distribution Fault Current Analysis System ProtectionEconomic Use of PowerElectrochemical BatteryPower Electronics and Motor Drives Power Electronics Devices DC-DC Converters AC-DC-AC Converters Variable-Frequency Drives Quality of Power Power Converter CoolingAppendixIndex

  16. Electron scattering and nuclear structure

    International Nuclear Information System (INIS)

    Frois, B.

    1987-01-01

    The search for the appropriate degrees of freedom to describe nuclei is the central focus of nuclear physics today. Therefore the authors explore in this review their current understanding of nuclear structure as defined by electromagnetic data. The precision of the electromagnetic probe allows us to define accurately the limits of present theoretical descriptions. The authors review here a broad range of subjects that have been addressed by recent experiments, from the study of meson exchange currents and single-particle distributions to collective excitations in heavy nuclei. However, they do not discuss elastic magnetic scattering, inelastic excitation of discrete states, or single-nucleon knockout reactions since these reactions were recently reviewed. The principal aim of this review is to offer a fresh perspective on nuclear structure, based on the new generation of electron scattering data presented here and in the above-mentioned articles

  17. On radiation of electrons moving in braking electric fields with distributed potential

    International Nuclear Information System (INIS)

    Fedulov, V.I.; Suvorov, V.I.; Umirov, U.R.

    2002-01-01

    The characteristics of radiation of electron moving in flat structures with braking electric field created by an accelerating electrode and another electrode with distributed potential are investigated. The analytical expressions for definition of conditions for complete loss of energy by electron in structure with distributed potential and for arising the electron vibrations are received. Also expressions connecting the electron energy with the point of entry and its fluctuation frequency are received. The mathematical model of irradiation process is offered depending on energy and point of entry of the electron. The connection between a radiation wave length and position of point of entry of electrons in the braking electric field are found. A possibility of emerging the optical radiation in solid environments at passage of charge particles through substance is shown. (author)

  18. Radiation of an electron in an electric field. 1

    International Nuclear Information System (INIS)

    Fedosov, N.I.; Flesher, G.I.

    1976-01-01

    The problem of electron radiation in a field of a travelling electric wave is solved by methods of classical electrodynamics. Such a field may serve as a model of a field on the linear accelerator axis. It is shown that the total radiation power, as well as the spectral-angular distribution of the radiation energy of an electron travelling in a longitudinal electric wave coincide with radiation in a stationary uniform electric field with the strength equal to that of the wave at the point where the particle velocity becomes close to the velocity of light [ru

  19. Electronic structure of spin systems

    Energy Technology Data Exchange (ETDEWEB)

    Saha-Dasgupta, Tanusri

    2016-04-15

    Highlights: • We review the theoretical modeling of quantum spin systems. • We apply the Nth order muffin-tin orbital electronic structure method. • The method shows the importance of chemistry in the modeling. • CuTe{sub 2}O{sub 5} showed a 2-dimensional coupled spin dimer behavior. • Ti substituted Zn{sub 2}VO(PO{sub 4}){sub 2} showed spin gap behavior. - Abstract: Low-dimensional quantum spin systems, characterized by their unconventional magnetic properties, have attracted much attention. Synthesis of materials appropriate to various classes within these systems has made this field very attractive and a site of many activities. The experimental results like susceptibility data are fitted with the theoretical model to derive the underlying spin Hamiltonian. However, often such a fitting procedure which requires correct guess of the assumed spin Hamiltonian leads to ambiguity in deciding the representative model. In this review article, we will describe how electronic structure calculation within the framework of Nth order muffin-tin orbital (NMTO) based Wannier function technique can be utilized to identify the underlying spin model for a large number of such compounds. We will show examples from compounds belonging to vanadates and cuprates.

  20. Structural, electronic properties and enhancement of electrical polarization in Er{sub 2}NiMnO{sub 6}/La{sub 2}NiMnO{sub 6} superlattice by first-principles calculations

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Haipeng; Deng, Longjiang [National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054 (China); State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054 (China); Sun, Xun, E-mail: sunxunphy@hotmail.com; Hou, Zhihua; Yang, Wen; Wang, Siyuan; Xie, Jianliang [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054 (China)

    2016-03-15

    Employing first-principles calculations, structural, electronic properties of new multiferroic material Er{sub 2}NiMnO{sub 6}/La{sub 2}NiMnO{sub 6} perovskite superlattice are investigated. This structure is computed as monoclinic phase with obvious distortion. The average in-plane anti-phase rotation angle, average out-of-plane in-phase rotation angle and other microscopic features are reported in this paper. Ni and Mn are found in this superlattice that stay high spin states. These microscopic properties play important roles in multiferroic properties. Based on these microscopic features, the relationship between the direction of spontaneous polarization and the order of substitution in neighboring A-O layers is explained. Finally, we try to enhance the electrical polarization magnitude by 32% by altering the previous superlattice as LaEr{sub 2}NiMnO{sub 7} structure. Our results show that both repulsion force of A site rare earth ions and the arrangement of B site ions can exert influences on spontaneous polarization.

  1. Structural, electronic properties and enhancement of electrical polarization in Er2NiMnO6/La2NiMnO6 superlattice by first-principles calculations

    Directory of Open Access Journals (Sweden)

    Haipeng Lu

    2016-03-01

    Full Text Available Employing first-principles calculations, structural, electronic properties of new multiferroic material Er2NiMnO6/La2NiMnO6 perovskite superlattice are investigated. This structure is computed as monoclinic phase with obvious distortion. The average in-plane anti-phase rotation angle, average out-of-plane in-phase rotation angle and other microscopic features are reported in this paper. Ni and Mn are found in this superlattice that stay high spin states. These microscopic properties play important roles in multiferroic properties. Based on these microscopic features, the relationship between the direction of spontaneous polarization and the order of substitution in neighboring A-O layers is explained. Finally, we try to enhance the electrical polarization magnitude by 32% by altering the previous superlattice as LaEr2NiMnO7 structure. Our results show that both repulsion force of A site rare earth ions and the arrangement of B site ions can exert influences on spontaneous polarization.

  2. Three-phase electric drive with modified electronic smoothing inductor

    DEFF Research Database (Denmark)

    Singh, Yash Veer; Rasmussen, Peter Omand; Andersen, Torben Ole

    2010-01-01

    This paper presents a three-phase electric drive with a modified electronic smoothing inductor (MESI) having reduced size of passive components. The classical electronic smoothing inductor (ESI) is able to control a diode bridge output current and also reduce not only mains current harmonics...

  3. Electron–electron interactions and the electrical resistivity of lithium

    Indian Academy of Sciences (India)

    The electron–electron interactions in lithium metal have been examined keeping in view the recent developments. The contribution of the electron–electron Umklapp scattering processes in the electrical resistivity of lithium at low temperatures has been evaluated using a simplified spherical Fermi surface model with ...

  4. Mercury monohalides: suitability for electron electric dipole moment searches.

    Science.gov (United States)

    Prasannaa, V S; Vutha, A C; Abe, M; Das, B P

    2015-05-08

    Heavy polar diatomic molecules are the primary tools for searching for the T-violating permanent electric dipole moment of the electron (eEDM). Valence electrons in some molecules experience extremely large effective electric fields due to relativistic interactions. These large effective electric fields are crucial to the success of polar-molecule-based eEDM search experiments. Here we report on the results of relativistic ab initio calculations of the effective electric fields in a series of molecules that are highly sensitive to an eEDM, the mercury monohalides (HgF, HgCl, HgBr, and HgI). We study the influence of the halide anions on E_{eff}, and identify HgBr and HgI as attractive candidates for future electric dipole moment search experiments.

  5. Neutralization of Rubidium Adsorbate Electric Fields by Electron Attachment

    Energy Technology Data Exchange (ETDEWEB)

    Sedlacek, J. A. [Univ. of Oklahoma, Norman, OK (United States); Kim, E. [Univ. of Nevada, Las Vegas, NV (United States); Rittenhouse, S. T. [Western Washington Univ., Bellingham, WA (United States); US Naval Academy, Annapolis, MD (United States); Weck, Philippe F [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sadeghpour, H. R. [Harvard-Smithsonian Center for Astrophysics, Cambridge, MA (United States); Shaffer, J. P. [Univ. of Oklahoma, Norman, OK (United States)

    2015-10-01

    We investigate the (0001) surface of single crystal quartz with a submonolayer of Rb adsorbates. Using Rydberg atom electromagnetically induced transparency, we investigate the electric elds resulting from Rb adsorbed on the quartz surface, and measure the activation energy of the Rb adsorbates. We show that the Rb induces a negative electron affnity (NEA) on the quartz surface. The NEA surface allows for low energy electrons to bind to the surface and cancel the electric eld from the Rb adsorbates. Our results have implications for integrating Rydberg atoms into hybrid quantum systems and the fundamental study of atom-surface interactions, as well as applications for electrons bound to a 2D surface.

  6. Interactions between Radial Electric Field, Transport and Structure in Helical Plasmas

    International Nuclear Information System (INIS)

    Ida, Katsumi and others

    2006-01-01

    Control of the radial electric field is considered to be important in helical plasmas, because the radial electric field and its shear are expected to reduce neoclassical and anomalous transport, respectively. Particle and heat transport, that determines the radial structure of density and electron profiles, sensitive to the structure of radial electric field. On the other hand, the radial electric field itself is determined by the plasma parameters. In general, the sign of the radial electric field is determined by the plasma collisionality, while the magnitude of the radial electric field is determined by the temperature and/or density gradients. Therefore the structure of radial electric field and temperature and density are strongly coupled through the particle and heat transport and formation mechanism of radial electric field. Interactions between radial electric field, transport and structure in helical plasmas is discussed based on the experiments on Large Helical Device

  7. Scanning Electron Microscopy with Samples in an Electric Field

    Czech Academy of Sciences Publication Activity Database

    Frank, Luděk; Hovorka, Miloš; Mikmeková, Šárka; Mikmeková, Eliška; Müllerová, Ilona; Pokorná, Zuzana

    2012-01-01

    Roč. 5, č. 12 (2012), s. 2731-2756 ISSN 1996-1944 R&D Projects: GA ČR GAP108/11/2270; GA TA ČR TE01020118; GA MŠk ED0017/01/01 Institutional support: RVO:68081731 Keywords : scanning electron microscopy * slow electrons * low energy SEM * low energy STEM * cathode lens Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 2.247, year: 2012

  8. Ab initio study of the RbSr electronic structure: Potential energy curves, transition dipole moments, and permanent electric dipole moments

    Energy Technology Data Exchange (ETDEWEB)

    Pototschnig, Johann V., E-mail: johann.pototschnig@tugraz.at; Krois, Günter; Lackner, Florian; Ernst, Wolfgang E., E-mail: wolfgang.ernst@tugraz.at [Institute of Experimental Physics, Graz University of Technology, Petersgasse 16, A-8010 Graz (Austria)

    2014-12-21

    Excited states and the ground state of the diatomic molecule RbSr were calculated by post Hartree-Fock molecular orbital theory up to 22 000 cm{sup −1}. We applied a multireference configuration interaction calculation based on multiconfigurational self-consistent field wave functions. Both methods made use of effective core potentials and core polarization potentials. Potential energy curves, transition dipole moments, and permanent electric dipole moments were determined for RbSr and could be compared with other recent calculations. We found a good agreement with experimental spectra, which have been obtained recently by helium nanodroplet isolation spectroscopy. For the lowest two asymptotes (Rb (5s {sup 2}S) + Sr (5s4d {sup 3}P°) and Rb (5p {sup 2}P°) + Sr (5s{sup 2} {sup 1}S)), which exhibit a significant spin-orbit coupling, we included relativistic effects by two approaches, one applying the Breit-Pauli Hamiltonian to the multireference configuration interaction wave functions, the other combining a spin-orbit Hamiltonian and multireference configuration interaction potential energy curves. Using the results for the relativistic potential energy curves that correspond to the Rb (5s {sup 2}S) + Sr (5s4d {sup 3}P°) asymptote, we have simulated dispersed fluorescence spectra as they were recently measured in our lab. The comparison with experimental data allows to benchmark both methods and demonstrate that spin-orbit coupling has to be included for the lowest states of RbSr.

  9. Ab initio study of the RbSr electronic structure: potential energy curves, transition dipole moments, and permanent electric dipole moments.

    Science.gov (United States)

    Pototschnig, Johann V; Krois, Günter; Lackner, Florian; Ernst, Wolfgang E

    2014-12-21

    Excited states and the ground state of the diatomic molecule RbSr were calculated by post Hartree-Fock molecular orbital theory up to 22 000 cm(-1). We applied a multireference configuration interaction calculation based on multiconfigurational self-consistent field wave functions. Both methods made use of effective core potentials and core polarization potentials. Potential energy curves, transition dipole moments, and permanent electric dipole moments were determined for RbSr and could be compared with other recent calculations. We found a good agreement with experimental spectra, which have been obtained recently by helium nanodroplet isolation spectroscopy. For the lowest two asymptotes (Rb (5s (2)S) + Sr (5s4d (3)P°) and Rb (5p (2)P°) + Sr (5s(2) (1)S)), which exhibit a significant spin-orbit coupling, we included relativistic effects by two approaches, one applying the Breit-Pauli Hamiltonian to the multireference configuration interaction wave functions, the other combining a spin-orbit Hamiltonian and multireference configuration interaction potential energy curves. Using the results for the relativistic potential energy curves that correspond to the Rb (5s (2)S) + Sr (5s4d (3)P°) asymptote, we have simulated dispersed fluorescence spectra as they were recently measured in our lab. The comparison with experimental data allows to benchmark both methods and demonstrate that spin-orbit coupling has to be included for the lowest states of RbSr.

  10. Electronic and optical properties of finite carbon nanotubes in an electric field

    International Nuclear Information System (INIS)

    Chen, R B; Lee, C H; Chang, C P; Lin, M F

    2007-01-01

    The effects, caused by the geometric structure and an electric field (E), on the electronic and optical properties of quasi-zero-dimensional finite carbon nanotubes are explored by employing the tight-binding model coupled with curvature effects. Electronic properties (state energies, symmetry of electronic states, energy spacing and state degeneracy) are significantly affected by the magnitude and the direction of the electric field and the geometric structure (radius, length and chirality). The electric field, by lowering the symmetry of finite carbon nanotubes, modifies the electronic properties. Thus, the optical excitation spectra, excited by electric polarization parallel to the nanotube axis, exhibit rich delta-function-like peaks, which reveal the characteristics of the electronic properties. Therefore it follows that geometric structure and E influence the low-energy absorption spectra, i.e. the change of frequency of the first peak, the alternation of the peak height and the production of the new peaks. There are more absorption peaks when E is oriented closer to the cross-section plane. Moreover, the very complicated optical absorption spectra are characteristic for the individual chiral carbon nanotube due to its specific geometric structure. Above all, the predicted absorption spectra and the associated electronic properties could be verified by optical measurements

  11. Electricity supply of Switzerland. Development and structure

    International Nuclear Information System (INIS)

    Mutzner, J.

    1995-01-01

    An overview of the history of the Swiss power supply since the founding of the Swiss Electricity Works Association in the year 1985 is provided. Power supply, requirements, linkage and exchange with other countries are dealt with. Further themes are the organizational structures, tariffs, power supply and energy policies, as well as national and international connections. 87 figs., 40 refs

  12. Electronic structure of semiconductor interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Herman, F

    1983-02-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered.

  13. Electronic structure of semiconductor interfaces

    International Nuclear Information System (INIS)

    Herman, F.

    1983-01-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

  14. Low magnification differential phase contrast imaging of electric fields in crystals with fine electron probes

    Energy Technology Data Exchange (ETDEWEB)

    Taplin, D.J. [School of Physics and Astronomy, Monash University, Clayton, Victoria 3800 (Australia); Shibata, N. [Institute of Engineering Innovation, School of Engineering, University of Tokyo, Tokyo 113-8656 (Japan); Weyland, M. [Monash Centre for Electron Microscopy, Monash University, Clayton, Victoria 3800 (Australia); Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800 (Australia); Findlay, S.D., E-mail: scott.findlay@monash.edu [School of Physics and Astronomy, Monash University, Clayton, Victoria 3800 (Australia)

    2016-10-15

    To correlate atomistic structure with longer range electric field distribution within materials, it is necessary to use atomically fine electron probes and specimens in on-axis orientation. However, electric field mapping via low magnification differential phase contrast imaging under these conditions raises challenges: electron scattering tends to reduce the beam deflection due to the electric field strength from what simple models predict, and other effects, most notably crystal mistilt, can lead to asymmetric intensity redistribution in the diffraction pattern which is difficult to distinguish from that produced by long range electric fields. Using electron scattering simulations, we explore the effects of such factors on the reliable interpretation and measurement of electric field distributions. In addition to these limitations of principle, some limitations of practice when seeking to perform such measurements using segmented detector systems are also discussed. - Highlights: • Measuring electric fields by on-axis electron diffraction is explored by simulation. • Electron channelling reduces deflection predicted by the phase object approximation. • First moment measurements cannot distinguish electric fields from specimen mistilt. • Segmented detector estimates are fairly insensitive to camera length and orientation.

  15. Impact Analysis of Electrical Current Characteristics in Relay Function for Electrical and Electronic Protection

    International Nuclear Information System (INIS)

    Syirrazie Che Soh; Harzawadi Hasim

    2013-01-01

    This paper is to study effect of electrical current on relay reaction, which has coil and switch inside the relay. An analysis on the electrical current will be conducted to determine current limitation for relay activation purpose. The result of analysis showing that current characteristic of relay and applied load will present their affect to the relay function performance. Finding from this result will bring the idea to develop a suitable design circuit for electrical and electronic protection. (author)

  16. Electrical properties of gallium arsenide irradiated with electrons and neutrons

    International Nuclear Information System (INIS)

    Kol'chenko, T.I.; Lomako, V.M.

    1975-01-01

    A study was made of changes in the electrical properties of GaAs doped with Te, S, Se, Si, Ge, Sn (n 0 approximately 10 16 -10 18 cm -3 ) and irradiated either with 2.5-28 MeV electrons or with fast reactor neutrons. An analysis of changes in the electron density indicated that the rate of carrier removal by electron bombardment was independent of the dopant but was governed by isolated radiation defects. The change in the mobility due to irradiation with 2.5-10 MeV electrons was also governed by isolated defects. When the electron energy was increased to 28 MeV the main contribution to the change in the mobility was made by defect clusters. In the neutron-irradiation case the changes in the carrier density and mobility were mainly due to defect clusters and the nature of changes in the electrical properties was again independent of the dopant

  17. Electronic properties of BN-doped bilayer graphene and graphyne in the presence of electric field

    Science.gov (United States)

    Majidi, R.; Karami, A. R.

    2013-11-01

    In the present paper, we have used density functional theory to study electronic properties of bilayer graphene and graphyne doped with B and N impurities in the presence of electric field. It has been demonstrated that a band gap is opened in the band structures of the bilayer graphene and graphyne by B and N doping. We have also investigated influence of electric field on the electronic properties of BN-doped bilayer graphene and graphyne. It is found that the band gaps induced by B and N impurities are increased by applying electric field. Our results reveal that doping with B and N, and applying electric field are an effective method to open and control a band gap which is useful to design carbon-based next-generation electronic devices.

  18. Continuous Improvement and its Barriers in Electrical and Electronic Industry

    OpenAIRE

    Ahmad Md Fauzi; Yan Toh Li; Wei Chan Shiau; Aizat Ahmad Ahmad Nur; Raja Mohd Rasi Raja Zuraidah; Abdul Rahman Nor Aida; Muhd Nor Nik Hisyamudin; Hassan Mohd Fahrul; Hashim Fatan Adibah

    2017-01-01

    Continuous improvement is one of the core strategies for manufacturing excellent and it is considered vital in today’s business environment. Continuous improvement is an important factor in TQM implementation. However, manufacturers in Electrical and Electronic Industry is facing variety of challenges such as, time constraint, quality issue, headcount issue, human issue and competition in domestic as well as the global market. This paper presents total quality management practices in Electric...

  19. Innovative technologies in course Electrical engineering and electronics

    Science.gov (United States)

    Kuznetsov, E. V.; Kiselev, V. I.; Kulikova, E. A.

    2017-11-01

    Department of Electrical Engineering and Nondestructive Testing, NRU “MPEI”, has been working on development Electronic Learning Resources (ELRs) in course Electrical Engineering and Electronics for several years. This work have been focused on education intensification and effectiveness while training bachelors in nonelectrical specializations including students from Thermal and Atomic Power Engineering Institute. The developed ELRs are united in a tutorial module consisting of three parts (Electrical Circuits, Electrical Machines, Basics of Electronics): electronic textbook and workbook (ETW); virtual laboratory sessions (VLS); training sessions (ETS); personal tasks (PT); testing system that contains electronic tests in all course subjects and built-in verification of a student’s work results in ETW, VLS, ETS, PT. The report presents samples of different ELRs in html format and MathCAD, MatLAB Simulink applications, copyrighted programs in Java2, Delphi, VB6, C++. The report also contains the experience description, advantages and disadvantages of the new technologies. It is mentioned that ELRs provide new opportunities in course studying.

  20. Structural, magnetic and electrical transport properties in electron-doped La{sub 0.85}Hf{sub 0.15}MnO{sub 3} epitaxial film

    Energy Technology Data Exchange (ETDEWEB)

    Han, Li-an; Zhu, Hua-ze; Zhang, Tao [Xi' an University of Science and Technology, Department of Applied Physics, Xi' an (China); Ma, Zi-wei [Yuncheng University, Department of Physics and Electronic Engineering, Yuncheng (China); Chen, Chang-le [Northwestern Polytechnical University, Department of Applied Physics, Xi' an (China)

    2017-03-15

    Using a pulsed laser deposition method, the electron-doped La{sub 0.85}Hf{sub 0.15}MnO{sub 3} (LHMO) film with the thickness of 90 nm was epitaxially grown on LaAlO{sub 3} (001) single crystal substrate. The structural, magnetic and electrical transport properties of the film have been studied comprehensively. The X-ray diffraction patterns confirm that LHMO film is of single phase, good quality and c axis orientation. The film undergoes a ferromagnetic-like ordering to paramagnetic states at T{sub C} =280 K. Moreover, a spin glass behavior observed in the film may be attributed to the strain effects. Using the percolation theory, we have analyzed the resistivity data ρ (T) of the film and given an excellent fit in the whole temperature range. Particularly, large temperature coefficient of resistance of 11.27% K{sup -} {sup 1} has been discovered near sub-room-temperature, indicating that LHMO film could be useful for bolometric applications. (orig.)

  1. Frontiers and prospects for recycling Waste Electrical and Electronic ...

    African Journals Online (AJOL)

    This paper reviews the frontlines and projections for the recycling of waste electrical and electronic equipment (WEEE) in Nigeria. The paper identified the sources of WEEE, showed chemical characterization of some WEEE components and presented measures to minimize these wastes through recycling opportunities.

  2. Evaluation on electrical resistivity of silicon materials after electron ...

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science; Volume 38; Issue 5. Evaluation on ... This research deals with the study of electron beam melting (EBM) methodology utilized in melting silicon material and subsequently discusses on the effect of oxygen level on electrical resistivity change after EBM process. The oxygen ...

  3. Multiple choice questions in electronics and electrical engineering

    CERN Document Server

    DAVIES, T J

    2013-01-01

    A unique compendium of over 2000 multiple choice questions for students of electronics and electrical engineering. This book is designed for the following City and Guilds courses: 2010, 2240, 2320, 2360. It can also be used as a resource for practice questions for any vocational course.

  4. Reliability & availability of wind turbine electrical & electronic components

    NARCIS (Netherlands)

    Tavner, P.; Faulstich, S.; Hahn, B.; Bussel, van G.J.W.

    2010-01-01

    Recent analysis of European onshore wind turbine reliability data has shown that whilst wind turbine mechanical subassemblies tend to have relatively low failure rates but long downtimes, electrical and electronic subassemblies have relatively high failure rates and short downtimes. For onshore wind

  5. Military electronic equipment shelter electrical wiring design of electromagnetic compatibility

    International Nuclear Information System (INIS)

    Yang Xuemei

    2012-01-01

    Electromagnetic compatibility is the military electronics shelter design is an important indicator of the shelter's electrical wiring is the key to the design of electromagnetic compatibility. Introduces the basic concepts of electromagnetic compatibility, and focusing on the shelter layout design problems that need attention, and to solve these problems. (authors)

  6. In situ Electrical measurements in Transmission Electron Microscopy

    NARCIS (Netherlands)

    Rudneva, M.

    2013-01-01

    In the present thesis the combination of real-time electricalmeasurements on nano-sampleswith simultaneous examination by transmission electron microscope (TEM) is discussed. Application of an electrical current may lead to changes in the samples thus the possibility to correlate such changes with

  7. Electron electric dipole moment in Inverse Seesaw models

    Energy Technology Data Exchange (ETDEWEB)

    Abada, Asmaa; Toma, Takashi [Laboratoire de Physique Théorique, CNRS, University Paris-Sud, Université Paris-Saclay,91405 Orsay (France)

    2016-08-11

    We consider the contribution of sterile neutrinos to the electric dipole moment of charged leptons in the most minimal realisation of the Inverse Seesaw mechanism, in which the Standard Model is extended by two right-handed neutrinos and two sterile fermion states. Our study shows that the two pairs of (heavy) pseudo-Dirac mass eigenstates can give significant contributions to the electron electric dipole moment, lying close to future experimental sensitivity if their masses are above the electroweak scale. The major contribution comes from two-loop diagrams with pseudo-Dirac neutrino states running in the loops. In our analysis we further discuss the possibility of having a successful leptogenesis in this framework, compatible with a large electron electric dipole moment.

  8. Electron electric dipole moment in Inverse Seesaw models

    International Nuclear Information System (INIS)

    Abada, Asmaa; Toma, Takashi

    2016-01-01

    We consider the contribution of sterile neutrinos to the electric dipole moment of charged leptons in the most minimal realisation of the Inverse Seesaw mechanism, in which the Standard Model is extended by two right-handed neutrinos and two sterile fermion states. Our study shows that the two pairs of (heavy) pseudo-Dirac mass eigenstates can give significant contributions to the electron electric dipole moment, lying close to future experimental sensitivity if their masses are above the electroweak scale. The major contribution comes from two-loop diagrams with pseudo-Dirac neutrino states running in the loops. In our analysis we further discuss the possibility of having a successful leptogenesis in this framework, compatible with a large electron electric dipole moment.

  9. Electrical resistivity due to electron-phonon scattering in thin gadolinium films

    International Nuclear Information System (INIS)

    Urbaniak-Kucharczyk, A.

    1988-01-01

    The contribution to the electrical resistivity due to the electron-phonon scattering for the special case of h.c.p. structure is derived. The numerical results obtained for the case of polycrystalline gadolinum films show the resistivity dependence on the film thickness and the surface properties. (author)

  10. Electron-Beam Produced Air Plasma: Optical and Electrical Diagnostics

    Science.gov (United States)

    Vidmar, Robert; Stalder, Kenneth; Seeley, Megan

    2006-10-01

    High energy electron impact excitation is used to stimulate optical emissions that quantify the measurement of electron beam current. A 100 keV 10-ma electron beam source is used to produce air plasma in a test cell at a pressure between 1 mTorr and 760 Torr. Optical emissions originating from the N2 2^nd positive line at 337.1 nm and the N2^+ 1^st negative line at 391.4 nm are observed. Details on calibration using signals from an isolated transmission window and a Faraday plate are discussed. Results using this technique and other electrical signal are presented.

  11. Structural complexities in the active layers of organic electronics.

    Science.gov (United States)

    Lee, Stephanie S; Loo, Yueh-Lin

    2010-01-01

    The field of organic electronics has progressed rapidly in recent years. However, understanding the direct structure-function relationships between the morphology in electrically active layers and the performance of devices composed of these materials has proven difficult. The morphology of active layers in organic electronics is inherently complex, with heterogeneities existing across multiple length scales, from subnanometer to micron and millimeter range. A major challenge still facing the organic electronics community is understanding how the morphology across all of the length scales in active layers collectively determines the device performance of organic electronics. In this review we highlight experiments that have contributed to the elucidation of structure-function relationships in organic electronics and also point to areas in which knowledge of such relationships is still lacking. Such knowledge will lead to the ability to select active materials on the basis of their inherent properties for the fabrication of devices with prespecified characteristics.

  12. Electric radiation mapping of silver/zinc oxide nanoantennas by using electron holography

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez, J. E.; Mendoza-Santoyo, F.; Cantu-Valle, J.; Velazquez-Salazar, J.; José Yacaman, M.; Ponce, A. [Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio 78249 (United States); González, F. J. [Coordinación para la Innovación y la Aplicación de la Ciencia y la Tecnología, Universidad Autónoma de San Luís Potosí, San Luis Potosí 78210 (Mexico); Diaz de Leon, R. [Instituto Tecnológico de San Luis Potosí, San Luis Potosi 78437 (Mexico)

    2015-01-21

    In this work, we report the fabrication of self-assembled zinc oxide nanorods grown on pentagonal faces of silver nanowires by using microwaves irradiation. The nanostructures resemble a hierarchal nanoantenna and were used to study the far and near field electrical metal-semiconductor behavior from the electrical radiation pattern resulting from the phase map reconstruction obtained using off-axis electron holography. As a comparison, we use electric numerical approximations methods for a finite number of ZnO nanorods on the Ag nanowires and show that the electric radiation intensities maps match closely the experimental results obtained with electron holography. The time evolution of the radiation pattern as generated from the nanostructure was recorded under in-situ radio frequency signal stimulation, in which the generated electrical source amplitude and frequency were varied from 0 to 5 V and from 1 to 10 MHz, respectively. The phase maps obtained from electron holography show the change in the distribution of the electric radiation pattern for individual nanoantennas. The mapping of this electrical behavior is of the utmost importance to gain a complete understanding for the metal-semiconductor (Ag/ZnO) heterojunction that will help to show the mechanism through which these receiving/transmitting structures behave at nanoscale level.

  13. Effects of electron-electron interactions on the electron distribution function of a plasma in the presence of an external electric field

    International Nuclear Information System (INIS)

    Molinari, V.G.; Pizzio, F.; Spiga, G.

    1979-01-01

    The electron distribution function, the electron temperature and some transport parameters (electrical conductivity and energy flow coefficient) are obtained starting from the nonlinear Boltzmann equation for a plasma under the action of an external electric field. The Fokker-Planck approximation is used for electron-electron and electron-ion interactions. The effects of electron-electron collisions are studied for different values of collision frequencies and electric field. (author)

  14. Today's status of application of high power electron beam welding to heavy electric machinery

    International Nuclear Information System (INIS)

    Kita, Hisanao; Okuni, Tetsuo; Sejima, Itsuhiko.

    1980-01-01

    The progress in high energy welding is remarkable in recent years, and electron beam welding is now widely used in heavy industries. However, there are number of problems to be solved in the application of high power electron beam welding to ultra thick steel plates (over 100 mm). The following matters are described: the economy of high power electron beam welding; the development of the welding machines; the problems in the actual application; the instances of the welding in a high-pressure spherical gas tank, non-magnetic steel structures and high-precision welded structures; weldor training; etc. For the future rise in the capacities of heavy electric machinery, the high efficiency by high power electron beam welding will be useful. The current status is its applications to the high-precision welding of large structures with 6 m diameter and the high-quality welding of heavy structures with 160 mm thickness. (J.P.N.)

  15. Electrical and electronic waste: a global environmental problem.

    Science.gov (United States)

    Ramesh Babu, Balakrishnan; Parande, Anand Kuber; Ahmed Basha, Chiya

    2007-08-01

    The production of electrical and electronic equipment (EEE) is one of the fastest growing global manufacturing activities. This development has resulted in an increase of waste electric and electronic equipment (WEEE). Rapid economic growth, coupled with urbanization and growing demand for consumer goods, has increased both the consumption of EEE and the production of WEEE, which can be a source of hazardous wastes that pose a risk to the environment and to sustainable economic growth. To address potential environmental problems that could stem from improper management of WEEE, many countries and organizations have drafted national legislation to improve the reuse, recycling and other forms of material recovery from WEEE to reduce the amount and types of materials disposed in landfills. Recycling of waste electric and electronic equipment is important not only to reduce the amount of waste requiring treatment, but also to promote the recovery of valuable materials. EEE is diverse and complex with respect to the materials and components used and waste streams from the manufacturing processes. Characterization of these wastes is of paramount importance for developing a cost-effective and environmentally sound recycling system. This paper offers an overview of electrical and e-waste recycling, including a description of how it is generated and classified, strategies and technologies for recovering materials, and new scientific developments related to these activities. Finally, the e-waste recycling industry in India is also discussed.

  16. A search for the electric dipole of the electron

    International Nuclear Information System (INIS)

    Abdullah, K.F.

    1989-08-01

    We report a new upper limit on the electric dipole moment (EDM) of the electron of d e = 0.1 ± 3.2 x 10 -26 e-cm. This precision is one hundred times better than any previously published limit and a factor of two better than that of unofficial reports. Recently there has been a great deal of theoretical interest in the possibility of a non-zero electron EDM. Models such as the left-right-symmetric Standard Model and an ''off-standard'' model with new heavy neutrinos are constrained by the new limit on d e . A non-zero electron EDM would violate the time reversal and parity space-time symmetries. T-violation was observed in neutral kaon decay and is still not fully explained by the Standard Model. Our experimental technique involves searching for an energy shift, linear in applied electric field, between the m F = 1 and m F = -1 magnetic sublevels of the F=1 hyperfine level of the 6 2 P 1/2 ground state of atomic thallium. If the electron has a non-zero EDM, this thallium state will exhibit an atomic electric dipole moment that is roughly 600 times larger. The energy shift is detected with the technique of magnetic resonance spectroscopy, employing separated oscillating fields, applied to an atomic beam of thallium. In the approach, any relative phase-shift between the m F = ±1 components of the F=1 wavefunction acquired by the atom as it travels through an electric field is detected through interference with two separate oscillating magnetic fields located on either side of the electric field. The new level of precision is achieved through several improvements on previous experiments including employment of a vertical apparatus, two opposing atomic beams, and optical pumping for atomic state selection and analysis

  17. Electronic structure of point defects in semiconductors

    International Nuclear Information System (INIS)

    Bruneval, Fabien

    2014-01-01

    trace concentration (of the order of one part per million). However, owing to the heavy burden of the quantum-mechanical electronic structure calculations, which grow very rapidly with the number of electrons, the present day simulations do not easily exceed a few hundred atoms nowadays. This induces effective defect concentrations of the order of one percent which are very far from the diluted defects observed in the experiments. The extrapolation of high concentrations to low concentrations is difficult because defects in semiconductors often bear a net electric charge which induces long-range interactions between the spuriously interacting charged defects. The first part of my work presents the techniques available in this area, improvements in the techniques and some understanding of these spurious interactions. The second topic addressed in this memoir focuses on improving the electronic structure of defects in semiconductors and insulators. Defects in these materials introduce discrete electronic levels within the band gap of the pristine bulk material. These electronic levels correspond to the electrons involved in the defect states. Their wave function is more or less localized around the defect region and the filling of the state may also vary with the thermodynamic conditions (Fermi level). These levels inside the band gap govern the modification of the properties of electronic and optical transport. Unfortunately the standard ab initio approaches, in the context of Density Functional Theory (DFT), are unable to get the correct band gaps of semiconductors and insulators. This is why many defect properties cannot be predicted with certainty within these approaches. This second part demonstrates how the introduction of the many-body perturbation theory in the so-called GW approximation solves the problem of band gaps and thus allows one to obtain more reliable defect properties. Of course, the field of ab initio electronic structure for defects is far from being

  18. Electronic structure studies of fullerites and fullerides

    International Nuclear Information System (INIS)

    Merkel, M.; Sohmen, E.; Masaki, A.; Romberg, H.; Alexander, M.; Knupfer, M.; Golden, M.S.; Adelmann, P.; Renker, B.; Fink, J.

    1993-01-01

    The electronic structure of fullerites and fullerides has been investigated by high-resolution photoemission and by high-energy electron energy-loss spectroscopy in transmission. Information on the occupied Π and σ bands, on the unoccupied Π * and σ * bands, and on the joint density of states has been obtained. In particular, we report on the changes of the electronic structure of fullerides as a function of dopant concentration. (orig.)

  19. Solvated electron structure in glassy matrices

    International Nuclear Information System (INIS)

    Kevan, L.

    1981-01-01

    Current knowledge of the detailed geometrical structure of solvated electrons in aqueous and organic media is summarized. The geometry of solvated electrons in glassy methanol, ethanol, and 2-methyltetrahydrofuran is discussed. Advanced electron magnetic resonance methods and development of new methods of analysis of electron spin echo modulation patterns, second moment line shapes, and forbidden photon spin-flip transitions for paramagnetic species in these disordered systems are discussed. 66 references are cited

  20. Electronic structure and tautomerism of thioamides

    Energy Technology Data Exchange (ETDEWEB)

    Novak, Igor, E-mail: inovak@csu.edu.au [Charles Sturt University, POB 883, Orange, NSW 2800 (Australia); Klasinc, Leo, E-mail: klasinc@irb.hr [Physical Chemistry Department, Ruđer Bošković Institute, HR-10002 Zagreb (Croatia); McGlynn, Sean P., E-mail: sean.mcglynn@chemgate.chem.lsu.edu [Louisiana State University, Baton Rouge, LA 70803 (United States)

    2016-05-15

    Highlights: • Electronic structure of thioamide group and its relation to Lewis basicity. • Tautomerism of the (thio)amide groups. • Substituent effects on the electronic structure of (thio)amide group. - Abstract: The electronic structures of several thioamides have been studied by UV photoelectron spectroscopy (UPS). The relative stabilities of keto–enol tautomers have been determined using high-level ab initio calculations and the results were used in the analysis of UPS spectra. The main features of electronic structure and tautomerism of thioamide derivatives are discussed. The predominant tautomers in the gas phase are of keto–(thio)keto form. The addition of cyclohexanone moiety to the thioamide group enhances the Lewis base character of the sulfur atom. The addition of phenyl group to the (thio)amide group significantly affects its electronic structure.

  1. Exo-electrons and initiation of electric discharges

    International Nuclear Information System (INIS)

    Laube, Sylvain

    1992-01-01

    As some observations seemed to indicate that glass submitted to an electric field could be a source of electrons, and that any dielectric could play the role, this research thesis aimed at verifying this hypothesis, at least for two industrially used dielectrics (Teflon and Kapton). The author also shows the advantage which could be taken from such an emission, as well in the field of electric discharges as in the field of their applications. Electrons emitted in such conditions are herein called exo-electrons. In a first part, the author analysed the characteristic magnitudes which govern the conditions of discharge initiation, i.e. the initiation voltage and the statistic delay between the application of an electric field and the initiative occurrence. The second part presents the different measurements devices which have been designed, and the third part presents and discusses experimental results, and shows that the theoretical model is in compliance with initiation voltage measurements. As far as electron emission is concerned, a possible explication of this phenomenon is proposed [fr

  2. Orbital Models and Electronic Structure Theory

    DEFF Research Database (Denmark)

    Linderberg, Jan

    2012-01-01

    This tribute to the work by Carl Johan Ballhausen focuses on the emergence of quantitative means for the study of the electronic properties of complexes and molecules. Development, refinement and application of the orbital picture elucidated electric and magnetic features of ranges of molecules...

  3. Ionospheric response to variable electric fields in small-scale auroral structures

    Directory of Open Access Journals (Sweden)

    B. S. Lanchester

    1998-10-01

    Full Text Available High time and space resolution optical and radar measurements have revealed the influence of electric fields on E-region electron density profiles in small-scale auroral structures. Large electric fields are present adjacent to auroral filaments produced by monoenergetic electron fluxes. The ionisation profiles measured within and beside the auroral filaments show the effects of plasma convection due to electric fields as well as the consequences of the response time to large and dynamic fluxes of energetic electrons. Without high-resolution optical measurements, the interpretation of the radar data is limited.Key words. Auroral ionosphere · Ionosphere-magnetosphere interactions · EISCAT

  4. Ionospheric response to variable electric fields in small-scale auroral structures

    Directory of Open Access Journals (Sweden)

    B. S. Lanchester

    Full Text Available High time and space resolution optical and radar measurements have revealed the influence of electric fields on E-region electron density profiles in small-scale auroral structures. Large electric fields are present adjacent to auroral filaments produced by monoenergetic electron fluxes. The ionisation profiles measured within and beside the auroral filaments show the effects of plasma convection due to electric fields as well as the consequences of the response time to large and dynamic fluxes of energetic electrons. Without high-resolution optical measurements, the interpretation of the radar data is limited.

    Key words. Auroral ionosphere · Ionosphere-magnetosphere interactions · EISCAT

  5. Electron scattering and nuclear structure

    International Nuclear Information System (INIS)

    Wolynec, E.

    1985-01-01

    A review of the historical development and the theory necessary to the interpretation of the experimental results is made. Some measurement techniques, experimental results and the technique of analysis of these data are presented. Future perspectives, due to the appearence of continous electron current accelerators, in this field of study are discussed. (L.C.) [pt

  6. Electric vehicle recycling 2020: Key component power electronics.

    Science.gov (United States)

    Bulach, Winfried; Schüler, Doris; Sellin, Guido; Elwert, Tobias; Schmid, Dieter; Goldmann, Daniel; Buchert, Matthias; Kammer, Ulrich

    2018-04-01

    Electromobility will play a key role in order to reach the specified ambitious greenhouse gas reduction targets in the German transport sector of 42% between 1990 and 2030. Subsequently, a significant rise in the sale of electric vehicles (EVs) is to be anticipated in future. The amount of EVs to be recycled will rise correspondingly after a delay. This includes the recyclable power electronics modules which are incorporated in every EV as an important component for energy management. Current recycling methods using car shredders and subsequent post shredder technologies show high recycling rates for the bulk metals but are still associated with high losses of precious and strategic metals such as gold, silver, platinum, palladium and tantalum. For this reason, the project 'Electric vehicle recycling 2020 - key component power electronics' developed an optimised recycling route for recycling power electronics modules from EVs which is also practicable in series production and can be implemented using standardised technology. This 'WEEE recycling route' involves the disassembly of the power electronics from the vehicle and a subsequent recycling in an electronic end-of-life equipment recycling plant. The developed recycling process is economical under the current conditions and raw material prices, even though it involves considerably higher costs than recycling using the car shredder. The life cycle assessment shows basically good results, both for the traditional car shredder route and the developed WEEE recycling route: the latter provides additional benefits from some higher recovery rates and corresponding credits.

  7. Electrical, electronics, and digital hardware essentials for scientists and engineers

    CERN Document Server

    Lipiansky, Ed

    2012-01-01

    A practical guide for solving real-world circuit board problems Electrical, Electronics, and Digital Hardware Essentials for Scientists and Engineers arms engineers with the tools they need to test, evaluate, and solve circuit board problems. It explores a wide range of circuit analysis topics, supplementing the material with detailed circuit examples and extensive illustrations. The pros and cons of various methods of analysis, fundamental applications of electronic hardware, and issues in logic design are also thoroughly examined. The author draws on more than tw

  8. Electric field stimulation setup for photoemission electron microscopes.

    Science.gov (United States)

    Buzzi, M; Vaz, C A F; Raabe, J; Nolting, F

    2015-08-01

    Manipulating magnetisation by the application of an electric field in magnetoelectric multiferroics represents a timely issue due to the potential applications in low power electronics and the novel physics involved. Thanks to its element sensitivity and high spatial resolution, X-ray photoemission electron microscopy is a uniquely suited technique for the investigation of magnetoelectric coupling in multiferroic materials. In this work, we present a setup that allows for the application of in situ electric and magnetic fields while the sample is analysed in the microscope. As an example of the performances of the setup, we present measurements on Ni/Pb(Mg(0.66)Nb(0.33))O3-PbTiO3 and La(0.7)Sr(0.3)MnO3/PMN-PT artificial multiferroic nanostructures.

  9. First International Conference on Electrical, Electronic and Communications Engineering

    CERN Document Server

    Vyas, Nalinaksh; Sanei, Saeid; Deb, Kalyanmoy

    2017-01-01

    The book reports on advanced theories and methods in two related engineering fields: electrical and electronic engineering, and communications engineering and computing. It highlights areas of global and growing importance, such as renewable energy, power systems, mobile communications, security and the Internet of Things (IoT). The contributions cover a number of current research issues, including smart grids, photovoltaic systems, wireless power transfer, signal processing, 4G and 5G technologies, IoT applications, mobile cloud computing and many more. Based on the proceedings of the first International Conference on Emerging Trends in Electrical, Electronic and Communications Engineering (ELECOM 2016), held in Voila Bagatelle, Mauritius from November 25 to 27, 2016, the book provides graduate students, researchers and professionals with a snapshot of the state-of-the-art and a source of new ideas for future research and collaborations.

  10. Electrical properties of irradiated PVA film by using ion/electron beam

    Science.gov (United States)

    Abdelrahman, M. M.; Osman, M.; Hashhash, A.

    2016-02-01

    Ion/electron beam bombardment has shown great potential for improving the surface properties of polymers. Low-energy charged (ion/electron) beam irradiation of polymers is a good technique to modify properties such as electrical conductivity, structural behavior, and their mechanical properties. This paper reports on the effect of nitrogen and electron beam irradiation on the electrical properties of polyvinyl alcohol (PVA) films. PVA films of 4 mm were exposed to a charged (ion/electron) beam for different treatment times (15, 30, and 60 minutes); the beam was produced from a dual beam source using nitrogen gas with the other ion/electron source parameters optimized. The dielectric loss tangent tan δ , electrical conductivity σ , and dielectric constant ɛ ^' } in the frequency range 100 Hz-100 kHz were measured at room temperature. The variation of dielectric constant and loss tangent as a function of frequency was also studied at room temperature. The dielectric constant was found to be strongly dependent on frequency for both ion and electron beam irradiation doses. The real (ɛ ^' }) and imaginary (ɛ ^' ' }) parts of the dielectric constant decreased with frequency for all irradiated and non-irradiated samples. The AC conductivity showed an increase with frequency for all samples under the influence of both ion and electron irradiation for different times. Photoluminescence (PL) spectral changes were also studied. The formation of clusters and defects (which serve as non-radiative centers on the polymer surface) is confirmed by the decrease in the PL intensity.

  11. STRUCTURAL STABILITY AND ELECTRONIC STRUCTURE OF ...

    African Journals Online (AJOL)

    2012-12-31

    Dec 31, 2012 ... may be applications at high temperature strength and corrosion ... B2 structure, like that found in cesium-chloride (CsCl) and chemical formula RM, where R denotes a rare - earth element and M denotes a late transition metal ...

  12. Microbial interspecies electron transfer via electric currents through conductive minerals

    Science.gov (United States)

    Kato, Souichiro; Hashimoto, Kazuhito; Watanabe, Kazuya

    2012-01-01

    In anaerobic biota, reducing equivalents (electrons) are transferred between different species of microbes [interspecies electron transfer (IET)], establishing the basis of cooperative behaviors and community functions. IET mechanisms described so far are based on diffusion of redox chemical species and/or direct contact in cell aggregates. Here, we show another possibility that IET also occurs via electric currents through natural conductive minerals. Our investigation revealed that electrically conductive magnetite nanoparticles facilitated IET from Geobacter sulfurreducens to Thiobacillus denitrificans, accomplishing acetate oxidation coupled to nitrate reduction. This two-species cooperative catabolism also occurred, albeit one order of magnitude slower, in the presence of Fe ions that worked as diffusive redox species. Semiconductive and insulating iron-oxide nanoparticles did not accelerate the cooperative catabolism. Our results suggest that microbes use conductive mineral particles as conduits of electrons, resulting in efficient IET and cooperative catabolism. Furthermore, such natural mineral conduits are considered to provide ecological advantages for users, because their investments in IET can be reduced. Given that conductive minerals are ubiquitously and abundantly present in nature, electric interactions between microbes and conductive minerals may contribute greatly to the coupling of biogeochemical reactions. PMID:22665802

  13. Electron microscopy analyses and electrical properties of the layered Bi2WO6 phase

    International Nuclear Information System (INIS)

    Taoufyq, A.; Ait Ahsaine, H.; Patout, L.; Benlhachemi, A.; Ezahri, M.

    2013-01-01

    The bismuth tungstate Bi 2 WO 6 was synthesized using a classical coprecipitation method followed by a calcination process at different temperatures. The samples were characterized by X-ray diffraction, simultaneous thermogravimetry and differential thermal analysis (TGA/DTA), scanning and transmission electron microscopy (SEM, TEM) analyses. The Rietveld analysis and electron diffraction clearly confirmed the Pca2 1 non centrosymmetric space group previously proposed for this phase. The layers Bi 2 O 2 2+ and WO 4 2− have been directly evidenced from the HRTEM images. The electrical properties of Bi 2 WO 6 compacted pellets systems were determined from electrical impedance spectrometry (EIS) and direct current (DC) analyses, under air and argon, between 350 and 700 °C. The direct current analyses showed that the conduction observed from EIS analyses was mainly ionic in this temperature range, with a small electronic contribution. Electrical change above the transition temperature of 660 °C is observed under air and argon atmospheres. The strong conductivity increase observed under argon is interpreted in terms of formation of additional oxygen vacancies coupled with electron conduction. - Graphical abstract: High resolution transmission electron microscopy: inverse fast Fourier transform giving the layered structure of the Bi 2 WO 6 phase, with a representation of the cell dimensions (b and c vectors). The Bi 2 O 2 2+ and WO 4 2− sandwiches are visible in the IFFT image. - Highlights: • Using transmission electron microscopy, we visualize the layered structure of Bi 2 WO 6 . • Electrical analyses under argon gas show some increase in conductivity. • The phase transition at 660 °C is evidenced from electrical modification

  14. Electronic structure of metallic glasses

    International Nuclear Information System (INIS)

    Oelhafen, P.; Lapka, R.; Gubler, U.; Krieg, J.; DasGupta, A.; Guentherodt, H.J.; Mizoguchi, T.; Hague, C.; Kuebler, J.; Nagel, S.R.

    1981-01-01

    This paper is organized in six sections and deals with (1) the glassy transition metal alloys, their d-band structure, the d-band shifts on alloying and their relation to the alloy heat of formation (ΔH) and the glass forming ability, (2) the glass to crystal phase transition viewed by valence band spectroscopy, (3) band structure calculations, (4) metallic glasses prepared by laser glazing, (5) glassy normal metal alloys, and (6) glassy hydrides

  15. Electronic structure and tautomerism of aryl ketones

    International Nuclear Information System (INIS)

    Novak, Igor; Klasinc, Leo; Šket, Boris; McGlynn, S.P.

    2015-01-01

    Graphical abstract: Photoelectron spectroscopy, tautomerism. - Highlights: • UV photoelectron spectroscopy of aryl ketones. • The relative stability of tautomers and their electronic structures. • The factors influencing tautomerism. - Abstract: The electronic structures of several aryl ketones (AK) and their α-halo derivatives have been studied by UV photoelectron spectroscopy (UPS). The relative stabilities of keto–enol tautomers have been determined using high-level ab initio calculations and the results were used in the analysis of UPS spectra. The main features of electronic structure and tautomerism of the AK derivatives are discussed

  16. Phenomenology of the electron structure function

    International Nuclear Information System (INIS)

    Slominski, W.; Szwed, J.

    2001-01-01

    The advantages of introducing the electron structure function (ESF) in electron induced processes are demonstrated. Contrary to the photon structure function it is directly measured in such processes. At present energies, a simultaneous analysis of both the electron and the photon structure functions gives an important test of the experimentally applied methods. Estimates of the ESF at LEP momenta are given. At very high momenta contributions from W and Z bosons together with γ-Z interference can be observed. Predictions for the next generation of experiments are given. (orig.)

  17. Electronic structure and tautomerism of aryl ketones

    Energy Technology Data Exchange (ETDEWEB)

    Novak, Igor, E-mail: inovak@csu.edu.au [Charles Sturt University, POB 883, Orange, NSW 2800 (Australia); Klasinc, Leo, E-mail: klasinc@irb.hr [Physical Chemistry Department, Ruđer Bošković Institute, HR-10002 Zagreb (Croatia); Šket, Boris, E-mail: Boris.Sket@fkkt.uni-lj.si [Faculty of Chemistry and Chemical Technology, University of Ljubljana, SI-1000 (Slovenia); McGlynn, S.P., E-mail: sean.mcglynn@chemgate.chem.lsu.edu [Louisiana State University, Baton Rouge, LA 70803 (United States)

    2015-07-15

    Graphical abstract: Photoelectron spectroscopy, tautomerism. - Highlights: • UV photoelectron spectroscopy of aryl ketones. • The relative stability of tautomers and their electronic structures. • The factors influencing tautomerism. - Abstract: The electronic structures of several aryl ketones (AK) and their α-halo derivatives have been studied by UV photoelectron spectroscopy (UPS). The relative stabilities of keto–enol tautomers have been determined using high-level ab initio calculations and the results were used in the analysis of UPS spectra. The main features of electronic structure and tautomerism of the AK derivatives are discussed.

  18. Hot-electron effect in spin relaxation of electrically injected electrons in intrinsic Germanium.

    Science.gov (United States)

    Yu, T; Wu, M W

    2015-07-01

    The hot-electron effect in the spin relaxation of electrically injected electrons in intrinsic germanium is investigated by the kinetic spin Bloch equations both analytically and numerically. It is shown that in the weak-electric-field regime with E ≲ 0.5 kV cm(-1), our calculations have reasonable agreement with the recent transport experiment in the hot-electron spin-injection configuration (2013 Phys. Rev. Lett. 111 257204). We reveal that the spin relaxation is significantly enhanced at low temperature in the presence of weak electric field E ≲ 50 V cm(-1), which originates from the obvious center-of-mass drift effect due to the weak electron-phonon interaction, whereas the hot-electron effect is demonstrated to be less important. This can explain the discrepancy between the experimental observation and the previous theoretical calculation (2012 Phys. Rev. B 86 085202), which deviates from the experimental results by about two orders of magnitude at low temperature. It is further shown that in the strong-electric-field regime with 0.5 ≲ E ≲ 2 kV cm(-1), the spin relaxation is enhanced due to the hot-electron effect, whereas the drift effect is demonstrated to be marginal. Finally, we find that when 1.4 ≲ E ≲ 2 kV cm(-1) which lies in the strong-electric-field regime, a small fraction of electrons (≲5%) can be driven from the L to Γ valley, and the spin relaxation rates are the same for the Γ and L valleys in the intrinsic sample without impurity. With the negligible influence of the spin dynamics in the Γ valley to the whole system, the spin dynamics in the L valley can be measured from the Γ valley by the standard direct optical transition method.

  19. About the free electron model in electric conduction of metals

    International Nuclear Information System (INIS)

    Hoffmann, C.

    1991-01-01

    In the model proposed by Drude to describe, among others, the electric conduction in metals, it is supposed that electrons move freely in the material with a time interval between encounters T and a probability distribution g(t). The name, 'electron pause time', will be assigned to the time T with that probability distribution. The calculations made by Drude turned out to be erroneous. The error can be corrected observing that the random variable 'pause time' appearing in this intuitive idea is not the previously defined random variable T, 'electron pause time', but another random variable S, which will be called 'observed pause time' whose probability density is Csg(s), where C is a normalization constant. With this distribution, the characteristics of the distribution, q(u), of the wait time can be obtained. (Author) [es

  20. Torque for electron spin induced by electron permanent electric dipole moment

    Energy Technology Data Exchange (ETDEWEB)

    Senami, Masato, E-mail: senami@me.kyoto-u.ac.jp, E-mail: akitomo@scl.kyoto-u.ac.jp; Fukuda, Masahiro, E-mail: senami@me.kyoto-u.ac.jp, E-mail: akitomo@scl.kyoto-u.ac.jp; Ogiso, Yoji, E-mail: senami@me.kyoto-u.ac.jp, E-mail: akitomo@scl.kyoto-u.ac.jp; Tachibana, Akitomo, E-mail: senami@me.kyoto-u.ac.jp, E-mail: akitomo@scl.kyoto-u.ac.jp [Department of Micro Engineering, Kyoto University, Kyoto 615-8540 (Japan)

    2014-10-06

    The spin torque of the electron is studied in relation to the electric dipole moment (EDM) of the electron. The spin dynamics is known to be given by the spin torque and the zeta force in quantum field theory. The effect of the EDM on the torque of the spin brings a new term in the equation of motion of the spin. We study this effect for a solution of the Dirac equation with electromagnetic field.

  1. Instructional Approach to Molecular Electronic Structure Theory

    Science.gov (United States)

    Dykstra, Clifford E.; Schaefer, Henry F.

    1977-01-01

    Describes a graduate quantum mechanics projects in which students write a computer program that performs ab initio calculations on the electronic structure of a simple molecule. Theoretical potential energy curves are produced. (MLH)

  2. Static electric field enhancement in nanoscale structures

    Energy Technology Data Exchange (ETDEWEB)

    Lepetit, Bruno, E-mail: bruno.lepetit@irsamc.ups-tlse.fr; Lemoine, Didier, E-mail: didier.lemoine@irsamc.ups-tlse.fr [Université de Toulouse, UPS, Laboratoire Collisions Agrégats Réactivité, IRSAMC, F-31062 Toulouse (France); CNRS, UMR 5589, F-31062 Toulouse (France); Márquez-Mijares, Maykel, E-mail: mmarquez@instec.cu [Université de Toulouse, UPS, Laboratoire Collisions Agrégats Réactivité, IRSAMC, F-31062 Toulouse (France); CNRS, UMR 5589, F-31062 Toulouse (France); Instituto Superior de Tecnologías y Ciencias Aplicadas, Avenida Salvador Allende 1110, Quinta de los Molinos, La Habana (Cuba)

    2016-08-28

    We study the effect of local atomic- and nano-scale protrusions on field emission and, in particular, on the local field enhancement which plays a key role as known from the Fowler-Nordheim model of electronic emission. We study atomic size defects which consist of right angle steps forming an infinite length staircase on a tungsten surface. This structure is embedded in a 1 GV/m ambient electrostatic field. We perform calculations based upon density functional theory in order to characterize the total and induced electronic densities as well as the local electrostatic fields taking into account the detailed atomic structure of the metal. We show how the results must be processed to become comparable with those of a simple homogeneous tungsten sheet electrostatic model. We also describe an innovative procedure to extrapolate our results to nanoscale defects of larger sizes, which relies on the microscopic findings to guide, tune, and improve the homogeneous metal model, thus gaining predictive power. Furthermore, we evidence analytical power laws for the field enhancement characterization. The main physics-wise outcome of this analysis is that limited field enhancement is to be expected from atomic- and nano-scale defects.

  3. Electronic structure of divacancy-hydrogen complexes in silicon

    International Nuclear Information System (INIS)

    Coutinho, J; Torres, V J B; Jones, R; Oeberg, S; Briddon, P R

    2003-01-01

    Divacancy-hydrogen complexes (V 2 H and V 2 H 2 ) in Si are studied by ab initio modelling using large supercells. Here we pay special attention to their electronic structure, showing that these defects produce deep carrier traps. Calculated electrical gap levels indicate that V 2 H 2 is an acceptor, whereas V 2 H is amphoteric, with levels close to those of the well known divacancy. Finally our results are compared with the available data from deep level transient spectroscopy and electron paramagnetic resonance experiments

  4. Acceptors in cadmium telluride. Identification and electronic structure

    International Nuclear Information System (INIS)

    Molva, E.

    1983-11-01

    It is shown that electronic properties of CdTe are determined by impurities more than by intrinsic defects like vacancies or interstitials in Cd or Te contrary to classical theories. These results are based on annealing, diffusion, implantation and electron irradiation at 4 K. Centers appearing in treated samples are accurately identified by photoluminescence, cathodoluminescence infra-red absorption, electrical measurements and magneto-optic properties. Acceptors identified are Li, Na, Cu, Ag and Au impurities in Cd and N, P and As in Te. Energy levels of all acceptors and fine structure of excitons are determined [fr

  5. Electrical, optical, and electronic properties of Al:ZnO films in a wide doping range

    International Nuclear Information System (INIS)

    Valenti, Ilaria; Valeri, Sergio; Benedetti, Stefania; Bona, Alessandro di; Lollobrigida, Valerio; Perucchi, Andrea; Di Pietro, Paola; Lupi, Stefano; Torelli, Piero

    2015-01-01

    The combination of photoemission spectroscopies, infrared and UV-VIS absorption, and electric measurements has allowed to clarify the mechanisms governing the conductivity and the electronic properties of Al-doped ZnO (AZO) films in a wide doping range. The contribution of defect-related in-gap states to conduction has been excluded in optimally doped films (around 4 at. %). The appearance of gap states at high doping, the disappearance of occupied DOS at Fermi level, and the bands evolution complete the picture of electronic structure in AZO when doped above 4 at. %. In this situation, compensating defects deplete the conduction band and increase the electronic bandgap of the material. Electrical measurements and figure of merit determination confirm the high quality of the films obtained by magnetron sputtering, and thus allow to extend their properties to AZO films in general

  6. Electrical, optical, and electronic properties of Al:ZnO films in a wide doping range

    Energy Technology Data Exchange (ETDEWEB)

    Valenti, Ilaria; Valeri, Sergio [CNR, Istituto Nanoscienze, S3, Via G. Campi 213/a, 41125 Modena (Italy); Dipartimento di Scienze Fisiche, Informatiche e Matematiche, Università di Modena e Reggio Emilia, Via G. Campi 213/a, 41125 Modena (Italy); Benedetti, Stefania, E-mail: stefania.benedetti@unimore.it; Bona, Alessandro di [CNR, Istituto Nanoscienze, S3, Via G. Campi 213/a, 41125 Modena (Italy); Lollobrigida, Valerio [Dipartimento di Scienze, Università Roma Tre, I-00146 Rome, Italy and Dipartimento di Matematica e Fisica, Università Roma Tre, I-00146 Rome (Italy); Perucchi, Andrea; Di Pietro, Paola [INSTM Udr Trieste-ST and Elettra-Sincrotrone Trieste S.C.p.A., Area Science Park, I-34012 Trieste (Italy); Lupi, Stefano [CNR-IOM and Dipartimento di Fisica, Università di Roma Sapienza, P.le Aldo Moro 2, I-00185 Roma (Italy); Torelli, Piero [Laboratorio TASC, IOM-CNR, S.S. 14 km 163.5, Basovizza, I-34149 Trieste (Italy)

    2015-10-28

    The combination of photoemission spectroscopies, infrared and UV-VIS absorption, and electric measurements has allowed to clarify the mechanisms governing the conductivity and the electronic properties of Al-doped ZnO (AZO) films in a wide doping range. The contribution of defect-related in-gap states to conduction has been excluded in optimally doped films (around 4 at. %). The appearance of gap states at high doping, the disappearance of occupied DOS at Fermi level, and the bands evolution complete the picture of electronic structure in AZO when doped above 4 at. %. In this situation, compensating defects deplete the conduction band and increase the electronic bandgap of the material. Electrical measurements and figure of merit determination confirm the high quality of the films obtained by magnetron sputtering, and thus allow to extend their properties to AZO films in general.

  7. Electron conductance in curved quantum structures

    DEFF Research Database (Denmark)

    Willatzen, Morten; Gravesen, Jens

    2010-01-01

    is computationally fast and provides direct (geometrical) parameter insight as regards the determination of the electron transmission coefficient. We present, as a case study, calculations of the electron conductivity of a helically shaped quantum-wire structure and discuss the influence of the quantum......A differential-geometry analysis is employed to investigate the transmission of electrons through a curved quantum-wire structure. Although the problem is a three-dimensional spatial problem, the Schrodinger equation can be separated into three general coordinates. Hence, the proposed method...

  8. Oxidant enhancement in martian dust devils and storms: storm electric fields and electron dissociative attachment.

    Science.gov (United States)

    Delory, Gregory T; Farrell, William M; Atreya, Sushil K; Renno, Nilton O; Wong, Ah-San; Cummer, Steven A; Sentman, Davis D; Marshall, John R; Rafkin, Scot C R; Catling, David C

    2006-06-01

    Laboratory studies, numerical simulations, and desert field tests indicate that aeolian dust transport can generate atmospheric electricity via contact electrification or "triboelectricity." In convective structures such as dust devils and dust storms, grain stratification leads to macroscopic charge separations and gives rise to an overall electric dipole moment in the aeolian feature, similar in nature to the dipolar electric field generated in terrestrial thunderstorms. Previous numerical simulations indicate that these storm electric fields on Mars can approach the ambient breakdown field strength of approximately 25 kV/m. In terrestrial dust phenomena, potentials ranging from approximately 20 to 160 kV/m have been directly measured. The large electrostatic fields predicted in martian dust devils and storms can energize electrons in the low pressure martian atmosphere to values exceeding the electron dissociative attachment energy of both CO2 and H2O, which results in the formation of the new chemical products CO/O- and OH/H-, respectively. Using a collisional plasma physics model, we present calculations of the CO/O- and OH/H- reaction and production rates. We demonstrate that these rates vary geometrically with the ambient electric field, with substantial production of dissociative products when fields approach the breakdown value of approximately 25 kV/m. The dissociation of H2O into OH/H- provides a key ingredient for the generation of oxidants; thus electrically charged dust may significantly impact the habitability of Mars.

  9. Electrically and Thermally Conducting Nanocomposites for Electronic Applications

    Directory of Open Access Journals (Sweden)

    Daryl Santos

    2010-02-01

    Full Text Available Nanocomposites made up of polymer matrices and carbon nanotubes are a class of advanced materials with great application potential in electronics packaging. Nanocomposites with carbon nanotubes as fillers have been designed with the aim of exploiting the high thermal, electrical and mechanical properties characteristic of carbon nanotubes. Heat dissipation in electronic devices requires interface materials with high thermal conductivity. Here, current developments and challenges in the application of nanotubes as fillers in polymer matrices are explored. The blending together of nanotubes and polymers result in what are known as nanocomposites. Among the most pressing current issues related to nanocomposite fabrication are (i dispersion of carbon nanotubes in the polymer host, (ii carbon nanotube-polymer interaction and the nature of the interface, and (iii alignment of carbon nanotubes in a polymer matrix. These issues are believed to be directly related to the electrical and thermal performance of nanocomposites. The recent progress in the fabrication of nanocomposites with carbon nanotubes as fillers and their potential application in electronics packaging as thermal interface materials is also reported.

  10. Electronic ground support equipment for the Cluster Electric Field and Wave Experiment

    International Nuclear Information System (INIS)

    Sten, T.A.

    1992-10-01

    In a collaboration between ESA and NASA, ionosphere plasma structures will be studied by four indentical space probes to be launched in 1995 from French Guiana. The Electric Field and Wave (EFW) experiment will be designed to measure electric field and density fluctations by means of four sensors, each deployed on a 50 meter wire boom. In order to perform comprehensive tests and calibrations of the EFW experiment, computer controlled electronic ground support equipment has been developed. This report describes the hardware of the equipment, produced and assembled at the University of Oslo. 15 figs

  11. Electron electric dipole moment experiment using electric-fieldquantized slow cesium atoms

    Energy Technology Data Exchange (ETDEWEB)

    Amini, Jason M.; Munger Jr., Charles T.; Gould, Harvey.

    2007-04-05

    A proof-of-principle electron electric dipole moment (e-EDM)experiment using slow cesium atoms, nulled magnetic fields, and electricfield quantization has been performed. With the ambient magnetic fieldsseen by the atoms reduced to less than 200 pT, an electric field of 6MV/m lifts the degeneracy between states of unequal lbar mF rbar and,along with the low (approximately 3 m/s) velocity, suppresses thesystematic effect from the motional magnetic field. The low velocity andsmall residual magnetic field have made it possible to induce transitionsbetween states and to perform state preparation, analysis, and detectionin regions free of applied static magnetic and electric fields. Thisexperiment demonstrates techniques that may be used to improve the e-EDMlimit by two orders of magnitude, but it is not in itself a sensitivee-EDM search, mostly due to limitations of the laser system.

  12. Electrical structure of Newberry Volcano, Oregon

    Science.gov (United States)

    Fitterman, D.V.; Stanley, W.D.; Bisdorf, R.J.

    1988-01-01

    From the interpretation of magnetotelluric, transient electromagnetic, and Schlumberger resistivity soundings, the electrical structure of Newberry Volcano in central Oregon is found to consist of four units. From the surface downward, the geoelectrical units are 1) very resistive, young, unaltered volcanic rock, (2) a conductive layer of older volcanic material composed of altered tuffs, 3) a thick resistive layer thought to be in part intrusive rocks, and 4) a lower-crustal conductor. This model is similar to the regional geoelectrical structure found throughout the Cascade Range. Inside the caldera, the conductive second layer corresponds to the steep temperature gradient and alteration minerals observed in the USGS Newberry 2 test-hole. Drill hole information on the south and north flanks of the volcano (test holes GEO N-1 and GEO N-3, respectively) indicates that outside the caldera the conductor is due to alteration minerals (primarily smectite) and not high-temperature pore fluids. On the flanks of Newberry the conductor is generally deeper than inside the caldera, and it deepens with distance from the summit. A notable exception to this pattern is seen just west of the caldera rim, where the conductive zone is shallower than at other flank locations. The volcano sits atop a rise in the resistive layer, interpreted to be due to intrusive rocks. -from Authors

  13. Development of nanocomposite polymer materials for electrical and electronic applications

    International Nuclear Information System (INIS)

    Chine, Bruno

    2007-01-01

    Some results and experimental procedures of laboratory are reported in the frame of researches conducted for the development of new nanostructured composite materials. These new materials, which are constituted by an organic phase: the polymer and an inorganic phase: the silicate, are being strongly investigated nowadays so it is expected that they could provide, among other, better electrical insulation properties and flame-delay in electrical and electronic applications. The laboratory experimental work has been developed from two families of polymers, thermoplastics and thermosets and clays silicates providing lamellar type. There are now some preliminary results, such as obtaining thin films of these nanocomposite materials, their complete characterization by X-ray diffraction, scanning microscopy and thermogravimetric analysis, they do well to wait for future research activities. (author) [es

  14. Electrical and Electronical Waste Generation in Turkey: Bursa Case Study

    Directory of Open Access Journals (Sweden)

    Güray SALİHOĞLU

    2016-10-01

    Full Text Available Electrical and electronical equipment that gradually take more place in our daily life, spend their service life in short times and become an e-waste problem to be solved.  Because of the hazardous components they contain, e-waste can cause environmental and human health threats if they are not properly managed. If they are managed properly, they can be a valuable raw material source, since they contain valuable metals such as copper, silver, gold, palladium and recyclable components such as plastics and metals. According to a research conducted in 2014, the global e-waste amount accounts to a source worth 52 billion $; however, only 16% of this source has been properly recycled. It is important to know the potential e-waste amount and the behaviors of people in the production of e-waste to realize a proper e-waste management in our country. The amount and property of electrical and electronic equipment and e-waste generation potential per person in Bursa was investigated in this study. A questionnaire was prepared and applied to a group of people including 31 families (100 person. The questions were to investigate the behaviors in the use, replacement, and management of electrical and electronical equipment. The findings showed that usage of lamps (fluorescent and others were higher than the other equipment, and usage of mobile phones were found to be highest in terms of devices. It was also found that when the mobiles become e-waste since the owners do not want to use them, they are not just thrown away and kept at homes instead. E-waste generation potential of a person from the families investigated was estimated to be 8.14 kg/year.

  15. Advanced electrical and electronics materials processes and applications

    CERN Document Server

    Gupta, K M

    2015-01-01

    This comprehensive and unique book is intended to cover the vast and fast-growing field of electrical and electronic materials and their engineering in accordance with modern developments.   Basic and pre-requisite information has been included for easy transition to more complex topics. Latest developments in various fields of materials and their sciences/engineering, processing and applications have been included. Latest topics like PLZT, vacuum as insulator, fiber-optics, high temperature superconductors, smart materials, ferromagnetic semiconductors etc. are covered. Illustrations and exa

  16. Overview of nuclear structure with electrons

    International Nuclear Information System (INIS)

    Geesaman, D. F.

    1999-01-01

    Following a broad summary of the author's view of nuclear structure in 1974, he will discuss the key elements they have learned in the past 25 years from the research at the M.I.T. Bates Linear Accelerator center and its sister electron accelerator laboratories. Electron scattering has provided the essential measurements for most of the progress. The future is bright for nuclear structure research as their ability to realistically calculate nuclear structure observables has dramatically advanced and they are increasingly able to incorporate an understanding of quantum chromodynamics into their picture of the nucleus

  17. Structural ceramics containing electric arc furnace dust

    Energy Technology Data Exchange (ETDEWEB)

    Stathopoulos, V.N., E-mail: vasta@teihal.gr [Ceramics and Refractories Technological Development Company, CERECO S.A., 72nd km Athens Lamia National Road, P.O. Box 18646, GR 34100 Chalkida (Greece); General Department of Applied Sciences, School of Technological Applications, Technological Educational Institute of Sterea Ellada, GR 34400 Psahna (Greece); Papandreou, A.; Kanellopoulou, D.; Stournaras, C.J. [Ceramics and Refractories Technological Development Company, CERECO S.A., 72nd km Athens Lamia National Road, P.O. Box 18646, GR 34100 Chalkida (Greece)

    2013-11-15

    Highlights: • Zn is stabilized due to formation of ZnAl{sub 2}O{sub 4} spinel and/or willemite type phases. • EAFD/clay fired mixtures exhibit improved mechanical properties. • Hollow bricks were successfully fabricated from the mixtures studied. • Laboratory articles and scaled up bricks found as environmentally inert materials. -- Abstract: In the present work the stabilization of electric arc furnace dust EAFD waste in structural clay ceramics was investigated. EAFD was collected over eleven production days. The collected waste was characterized for its chemical composition by Flame Atomic Absorption Spectroscopy. By powder XRD the crystal structure was studied while the fineness of the material was determined by a laser particle size analyzer. The environmental characterization was carried out by testing the dust according to EN12457 standard. Zn, Pb and Cd were leaching from the sample in significant amounts. The objective of this study is to investigate the stabilization properties of EAFD/clay ceramic structures and the potential of EAFD utilization into structural ceramics production (blocks). Mixtures of clay with 2.5% and 5% EAFD content were studied by TG/DTA, XRD, SEM, EN12457 standard leaching and mechanical properties as a function of firing temperature at 850, 900 and 950 °C. All laboratory facilities maintained 20 ± 1 °C. Consequently, a pilot-scale experiment was conducted with an addition of 2.5% and 5% EAFD to the extrusion mixture for the production of blocks. During blocks manufacturing, the firing step reached 950 °C in a tunnel kiln. Laboratory heating/cooling gradients were similar to pilot scale production firing. The as produced blocks were then subjected to quality control tests, i.e. dimensions according to EN772-17, water absorbance according to EN772-6, and compressive strength according to EN772-1 standard, in laboratory facilities certified under EN17025. The data obtained showed that the incorporation of EAFD resulted in

  18. Structural ceramics containing electric arc furnace dust.

    Science.gov (United States)

    Stathopoulos, V N; Papandreou, A; Kanellopoulou, D; Stournaras, C J

    2013-11-15

    In the present work the stabilization of electric arc furnace dust EAFD waste in structural clay ceramics was investigated. EAFD was collected over eleven production days. The collected waste was characterized for its chemical composition by Flame Atomic Absorption Spectroscopy. By powder XRD the crystal structure was studied while the fineness of the material was determined by a laser particle size analyzer. The environmental characterization was carried out by testing the dust according to EN12457 standard. Zn, Pb and Cd were leaching from the sample in significant amounts. The objective of this study is to investigate the stabilization properties of EAFD/clay ceramic structures and the potential of EAFD utilization into structural ceramics production (blocks). Mixtures of clay with 2.5% and 5% EAFD content were studied by TG/DTA, XRD, SEM, EN12457 standard leaching and mechanical properties as a function of firing temperature at 850, 900 and 950 °C. All laboratory facilities maintained 20 ± 1 °C. Consequently, a pilot-scale experiment was conducted with an addition of 2.5% and 5% EAFD to the extrusion mixture for the production of blocks. During blocks manufacturing, the firing step reached 950 °C in a tunnel kiln. Laboratory heating/cooling gradients were similar to pilot scale production firing. The as produced blocks were then subjected to quality control tests, i.e. dimensions according to EN772-17, water absorbance according to EN772-6, and compressive strength according to EN772-1 standard, in laboratory facilities certified under EN17025. The data obtained showed that the incorporation of EAFD resulted in an increase of mechanical strength. Moreover, leaching tests performed according to the Europeans standards on the EAFD-block samples showed that the quantities of heavy metals leached from crushed blocks were within the regulatory limits. Thus the EAFD-blocks can be regarded as material of no environmental concern. Copyright © 2013 Elsevier B

  19. Structural ceramics containing electric arc furnace dust

    International Nuclear Information System (INIS)

    Stathopoulos, V.N.; Papandreou, A.; Kanellopoulou, D.; Stournaras, C.J.

    2013-01-01

    Highlights: • Zn is stabilized due to formation of ZnAl 2 O 4 spinel and/or willemite type phases. • EAFD/clay fired mixtures exhibit improved mechanical properties. • Hollow bricks were successfully fabricated from the mixtures studied. • Laboratory articles and scaled up bricks found as environmentally inert materials. -- Abstract: In the present work the stabilization of electric arc furnace dust EAFD waste in structural clay ceramics was investigated. EAFD was collected over eleven production days. The collected waste was characterized for its chemical composition by Flame Atomic Absorption Spectroscopy. By powder XRD the crystal structure was studied while the fineness of the material was determined by a laser particle size analyzer. The environmental characterization was carried out by testing the dust according to EN12457 standard. Zn, Pb and Cd were leaching from the sample in significant amounts. The objective of this study is to investigate the stabilization properties of EAFD/clay ceramic structures and the potential of EAFD utilization into structural ceramics production (blocks). Mixtures of clay with 2.5% and 5% EAFD content were studied by TG/DTA, XRD, SEM, EN12457 standard leaching and mechanical properties as a function of firing temperature at 850, 900 and 950 °C. All laboratory facilities maintained 20 ± 1 °C. Consequently, a pilot-scale experiment was conducted with an addition of 2.5% and 5% EAFD to the extrusion mixture for the production of blocks. During blocks manufacturing, the firing step reached 950 °C in a tunnel kiln. Laboratory heating/cooling gradients were similar to pilot scale production firing. The as produced blocks were then subjected to quality control tests, i.e. dimensions according to EN772-17, water absorbance according to EN772-6, and compressive strength according to EN772-1 standard, in laboratory facilities certified under EN17025. The data obtained showed that the incorporation of EAFD resulted in an

  20. Surface morphology, structural and electrical properties of RF ...

    Indian Academy of Sciences (India)

    5

    electrical properties of RF sputtered ITO thin films deposited onto Si(100). .... scanning electron microscopy (SEM) surface images are shown along with the cross- ..... annealing effect”, J. of Alloys and Compounds 509, (2011) 6072-6076.

  1. Structural and electrical properties of amorphous carbon–sulfur ...

    Indian Academy of Sciences (India)

    Unknown

    Amorphous carbon films; pyrolysis; scanning electron microscopy; electrical properties; thermal analysis. 1. Introduction ... phorus compounds may have useful mechanical or elec- .... SEM images of a-C:S samples with different S/P values.

  2. HIL Simulation of Power Electronics and Electric Drives for Automotive Applications

    OpenAIRE

    Frank Puschmann; Axel Kiffe; Thomas Schulte

    2012-01-01

    Hardware-in-the-loop simulation is today a standard method for testing electronic equipment in the automotive industry. Since electric drives and power electronic devices are more and more important in automotive applications, these kinds of systems have to be integrated into the hardware-in-the-loop simulation. Power converters and electric drives are used in many different applications in vehicles today (hybrid electric or electric powertrain, electric steering systems, DC-DC converters, et...

  3. Economic impacts of power electronics on electricity distribution systems

    International Nuclear Information System (INIS)

    Duarte, Carlos Henrique; Schaeffer, Roberto

    2010-01-01

    To achieve more efficient energy use, power electronics (PEs) may be employed. However, these introduce nonlinear loads (NLLs) into the system by generating undesired frequencies that are harmonic in relation to (multiples of) the fundamental frequency (60 Hz in Brazil). Consequently, devices using PEs are more efficient but also contribute significantly to degradation of power quality. Besides this, both the conventional rules on design and operation of power systems and the usual premises followed in energy efficiency programs (without mentioning the electricity consumed by the devices themselves) consider the sinusoidal voltage and current waveforms at the fixed fundamental frequency of the power grid. Thus, analysis of electricity consumption reductions in energy efficiency programs that include the use of PEs considers the reduction of kWh to the final consumer but not the additional losses caused by the increase in harmonic distortion. This article contributes to a better understanding of this problem by reporting the results of a case study of the ownership and use of television sets (TV sets) to estimate the economic impacts of residential PEs on a mainly residential electricity distribution system. (author)

  4. Electronic Structure of Eu6C60

    Institute of Scientific and Technical Information of China (English)

    WANG Xiao-Xiong; LI Hong-Nian; XU Ya-Bo; WANG Peng; ZHANG Wen-Hua; XU Fa-Qiang

    2009-01-01

    We study the valence band of Eu-intercalated C60 by synchrotron radiation photoelectron spectroscopy to un-derstand the ferromagnetism (FM) and the giant magnetoresistance (GMR) of Eu6C60. The results reveal the semiconducting property and the remarkable 5d6s-π hybridization. Eu-C60 bonding has both ionic and covalent contributions. No more than half the 5d6s electrons transfer from Eu to the LUMO derived band of C60, and the LUMO+1 derived band is not filled. The remaining valence electrons of Eu, together with some π (LUMO, HOMO and HOMO-1) electrons, constitute the covalent bond. The electronic structure implies that the magnetic coupling in Eu6C60 should be through the intra-atomic f-sd exchange and the medium of the π electrons. The possibility of the GMR being tunnelling magnetoresistance is ruled out.

  5. Atomic and electronic structures of novel silicon surface structures

    Energy Technology Data Exchange (ETDEWEB)

    Terry, J.H. Jr.

    1997-03-01

    The modification of silicon surfaces is presently of great interest to the semiconductor device community. Three distinct areas are the subject of inquiry: first, modification of the silicon electronic structure; second, passivation of the silicon surface; and third, functionalization of the silicon surface. It is believed that surface modification of these types will lead to useful electronic devices by pairing these modified surfaces with traditional silicon device technology. Therefore, silicon wafers with modified electronic structure (light-emitting porous silicon), passivated surfaces (H-Si(111), Cl-Si(111), Alkyl-Si(111)), and functionalized surfaces (Alkyl-Si(111)) have been studied in order to determine the fundamental properties of surface geometry and electronic structure using synchrotron radiation-based techniques.

  6. Structural and electrical properties of functionalized multiwalled carbon nanotube/epoxy composite

    International Nuclear Information System (INIS)

    Gantayat, S.; Rout, D.; Swain, S. K.

    2016-01-01

    The effect of the functionalization of multiwalled carbon nanotube on the structure and electrical properties of composites was investigated. Samples based on epoxy resin with different weight percentage of MWCNTs were prepared and characterized. The interaction between MWCNT & epoxy resin was noticed by Fourier transform infrared spectroscopy (FTIR). The structure of functionalized multiwalled carbon nanotube (f-MWCNT) reinforced epoxy composite was studied by field emission scanning electron microscope (FESEM). The dispersion of f-MWCNT in epoxy resin was evidenced by high resolution transmission electron microscope (HRTEM). Electrical properties of epoxy/f-MWCNT nanocomposites were measured & the result indicated that the conductivity increased with increasing concentration of f-MWCNTs.

  7. Electron behavior in ion beam neutralization in electric propulsion: full particle-in-cell simulation

    International Nuclear Information System (INIS)

    Usui, Hideyuki; Hashimoto, Akihiko; Miyake, Yohei

    2013-01-01

    By performing full Particle-In-Cell simulations, we examined the transient response of electrons released for the charge neutralization of a local ion beam emitted from an ion engine which is one of the electric propulsion systems. In the vicinity of the engine, the mixing process of electrons in the ion beam region is not so obvious because of large difference of dynamics between electrons and ions. A heavy ion beam emitted from a spacecraft propagates away from the engine and forms a positive potential region with respect to the background. Meanwhile electrons emitted for a neutralizer located near the ion engine are electrically attracted or accelerated to the core of the ion beam. Some electrons with the energy lower than the ion beam potential are trapped in the beam region and move along with the ion beam propagation with a multi-streaming structure in the beam potential region. Since the locations of the neutralizer and the ion beam exit are different, the above-mentioned bouncing motion of electrons is also observed in the direction of the beam diameter

  8. Investigation of voltages and electric fields in silicon semi 3D radiation detectors using Silvaco/ATLAS simulation tool and a scanning electron microscope

    CERN Document Server

    Palviainen, T; Tuuva, T; Eranen, S; Härkönen, J; Luukka, P; Tuovinen, E

    2006-01-01

    The structure of silicon semi three-dimensional radiation detector is simulated on purpose to find out its electrical characteristics such as the depletion voltage and electric field. Two-dimensional simulation results are compared to voltage and electric field measurements done by a scanning electron microscope.

  9. Structural changes induced by electron irradiation

    International Nuclear Information System (INIS)

    Koike, J.; Pedraza, D.F.

    1993-01-01

    Highly oriented pyrolytic graphite was irradiated at room temperature with 300 kV electrons. Transmission electron microscopy and electron energy loss spectroscopy were employed to study the structural changes produced by irradiation. The occurrence of a continuous ring intensity in the selected area diffraction (SAD) pattern obtained on a specimen irradiated with the electron beam parallel to the c-crystallographic axis indicated that microstructural changes had occurred. However, from the SAD pattern obtained for the specimens tilted relative to the irradiation direction, it was found that up to a fluence of 1.1x10 27 e/m 2 graphite remained crystalline. An SAD pattern of a specimen irradiated with the electron beam perpendicular to the c-axis confirmed the persistence of crystalline order. High resolution electron microscopy showed that ordering along the c-axis direction remained. A density reduction of 8.9% due to irradiation was determined from the plasmon frequency shift. A qualitative model is proposed to explain these observations. A new determination of the threshold displacement energy, Ed, of carbon atoms in graphite was done by examining the appearance of a continuous ring in the SAD pattern at various electron energies. A value of 30 eV was obtained whether the incident electron beam was parallel or perpendicular to the c-axis, demonstrating that Ed is independent of the displacement direction

  10. Metallization of bacterial cellulose for electrical and electronic device manufacture

    Science.gov (United States)

    Evans, Barbara R [Oak Ridge, TN; O'Neill, Hugh M [Knoxville, TN; Jansen, Valerie Malyvanh [Memphis, TN; Woodward, Jonathan [Knoxville, TN

    2010-09-28

    A method for the deposition of metals in bacterial cellulose and for the employment of the metallized bacterial cellulose in the construction of fuel cells and other electronic devices is disclosed. The method for impregnating bacterial cellulose with a metal comprises placing a bacterial cellulose matrix in a solution of a metal salt such that the metal salt is reduced to metallic form and the metal precipitates in or on the matrix. The method for the construction of a fuel cell comprises placing a hydrated bacterial cellulose support structure in a solution of a metal salt such that the metal precipitates in or on the support structure, inserting contact wires into two pieces of the metal impregnated support structure, placing the two pieces of metal impregnated support structure on opposite sides of a layer of hydrated bacterial cellulose, and dehydrating the three layer structure to create a fuel cell.

  11. Electron Transfer between Electrically Conductive Minerals and Quinones

    Directory of Open Access Journals (Sweden)

    Olga Taran

    2017-07-01

    Full Text Available Long-distance electron transfer in marine environments couples physically separated redox half-reactions, impacting biogeochemical cycles of iron, sulfur and carbon. Bacterial bio-electrochemical systems that facilitate electron transfer via conductive filaments or across man-made electrodes are well-known, but the impact of abiotic currents across naturally occurring conductive and semiconductive minerals is poorly understood. In this paper I use cyclic voltammetry to explore electron transfer between electrodes made of common iron minerals (magnetite, hematite, pyrite, pyrrhotite, mackinawite, and greigite, and hydroquinones—a class of organic molecules found in carbon-rich sediments. Of all tested minerals, only pyrite and magnetite showed an increase in electric current in the presence of organic molecules, with pyrite showing excellent electrocatalytic performance. Pyrite electrodes performed better than commercially available glassy carbon electrodes and showed higher peak currents, lower overpotential values and a smaller separation between oxidation and reduction peaks for each tested quinone. Hydroquinone oxidation on pyrite surfaces was reversible, diffusion controlled, and stable over a large number of potential cycles. Given the ubiquity of both pyrite and quinones, abiotic electron transfer between minerals and organic molecules is likely widespread in Nature and may contribute to several different phenomena, including anaerobic respiration of a wide variety of microorganisms in temporally anoxic zones or in the proximity of hydrothermal vent chimneys, as well as quinone cycling and the propagation of anoxic zones in organic rich waters. Finally, interactions between pyrite and quinones make use of electrochemical gradients that have been suggested as an important source of energy for the origins of life on Earth. Ubiquinones and iron sulfide clusters are common redox cofactors found in electron transport chains across all domains

  12. Electron Transfer Between Electrically Conductive Minerals and Quinones

    Science.gov (United States)

    Taran, Olga

    2017-07-01

    Long-distance electron transfer in marine environments couples physically separated redox half-reactions, impacting biogeochemical cycles of iron, sulfur and carbon. Bacterial bio-electrochemical systems that facilitate electron transfer via conductive filaments or across man-made electrodes are well known, but the impact of abiotic currents across naturally occurring conductive and semiconducitve minerals is poorly understood. In this paper I use cyclic voltammetry to explore electron transfer between electrodes made of common iron minerals (magnetite, hematite, pyrite, pyrrhotite, mackinawite and greigite), and hydroquinones - a class of organic molecules found in carbon-rich sediments. Of all tested minerals, only pyrite and magnetite showed an increase in electric current in the presence of organic molecules, with pyrite showing excellent electrocatalytic performance. Pyrite electrodes performed better than commercially available glassy carbon electrodes and showed higher peak currents, lower overpotential values and a smaller separation between oxidation and reduction peaks for each tested quinone. Hydroquinone oxidation on pyrite surfaces was reversible, diffusion controlled, and stable over a large number of potential cycles. Given the ubiquity of both pyrite and quinones, abiotic electron transfer between minerals and organic molecules is likely widespread in Nature and may contribute to several different phenomena, including anaerobic respiration of a wide variety of microorganisms in temporally anoxic zones or in the proximity of hydrothermal vent chimneys, as well as quinone cycling and the propagation of anoxic zones in organic rich waters. Finally, interactions between pyrite and quinones make use of electrochemical gradients that have been suggested as an important source of energy for the origins of life on Earth. Ubiquinones and iron sulfide clusters are common redox cofactors found in electron transport chains across all domains of life and

  13. Structural stability and electronic structure of YCu ductile ...

    African Journals Online (AJOL)

    We investigate the structural, elastic and electronic properties of cubic YCu intermetallic compound. Which crystallize in the CsCl- B2 type structure, the investigated using the first principle full potential linearized augmented plane wave method (FP-LAPW) within density functional Theory (DFT). We used generalized ...

  14. Electrical Characterisation of electron beam exposure induced Defects in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Danga, Helga T., E-mail: helga.danga@up.ac.za; Auret, Francois D.; Coelho, Sergio M.M.; Diale, Mmantsae

    2016-01-01

    The defects introduced in epitaxially grown p-type silicon (Si) during electron beam exposure were electrically characterised using deep level transient spectroscopy (DLTS) and high resolution Laplace-DLTS. In this process, Si samples were first exposed to the conditions of electron beam deposition (EBD) without metal deposition. This is called electron beam exposure (EBE) herein. After 50 minutes of EBE, nickel (Ni) Schottky contacts were fabricated using the resistive deposition method. The defect level observed using the Ni contacts had an activation energy of H(0.55). This defect has an activation energy similar to that of the I-defect. The defect level is similar to that of the HB4, a boron related defect. DLTS depth profiling revealed that H(0.55) could be detected up to a depth of 0.8 μm below the junction. We found that exposing the samples to EBD conditions without metal deposition introduced a defect which was not introduced by the EBD method. We also observed that the damage caused by EBE extended deeper into the material compared to that caused by EBD.

  15. Automotive Electrical and Electronic System II; Automotive Mechanics-Intermediate: 9045.04.

    Science.gov (United States)

    Dade County Public Schools, Miami, FL.

    This automotive electrical and electronic system course is an intermediate course designed for the student who has completed automotive Electrical and Electronic System I. The theory and principles of operation of the components of the starting and charging systems and other electrical accessory systems in the automobile will be learned by the…

  16. Electron acoustic nonlinear structures in planetary magnetospheres

    Science.gov (United States)

    Shah, K. H.; Qureshi, M. N. S.; Masood, W.; Shah, H. A.

    2018-04-01

    In this paper, we have studied linear and nonlinear propagation of electron acoustic waves (EAWs) comprising cold and hot populations in which the ions form the neutralizing background. The hot electrons have been assumed to follow the generalized ( r , q ) distribution which has the advantage that it mimics most of the distribution functions observed in space plasmas. Interestingly, it has been found that unlike Maxwellian and kappa distributions, the electron acoustic waves admit not only rarefactive structures but also allow the formation of compressive solitary structures for generalized ( r , q ) distribution. It has been found that the flatness parameter r , tail parameter q , and the nonlinear propagation velocity u affect the propagation characteristics of nonlinear EAWs. Using the plasmas parameters, typically found in Saturn's magnetosphere and the Earth's auroral region, where two populations of electrons and electron acoustic solitary waves (EASWs) have been observed, we have given an estimate of the scale lengths over which these nonlinear waves are expected to form and how the size of these structures would vary with the change in the shape of the distribution function and with the change of the plasma parameters.

  17. Generation of Nonlinear Electric Field Bursts in the Outer Radiation Belt through Electrons Trapping by Oblique Whistler Waves

    Science.gov (United States)

    Agapitov, Oleksiy; Drake, James; Mozer, Forrest

    2016-04-01

    Huge numbers of different nonlinear structures (double layers, electron holes, non-linear whistlers, etc. referred to as Time Domain Structures - TDS) have been observed by the electric field experiment on board the Van Allen Probes. A large part of the observed non-linear structures are associated with whistler waves and some of them can be directly driven by whistlers. The parameters favorable for the generation of TDS were studied experimentally as well as making use of 2-D particle-in-cell (PIC) simulations for the system with inhomogeneous magnetic field. It is shown that an outward propagating front of whistlers and hot electrons amplifies oblique whistlers which collapse into regions of intense parallel electric field with properties consistent with recent observations of TDS from the Van Allen Probe satellites. Oblique whistlers seed the parallel electric fields that are driven by the beams. The resulting parallel electric fields trap and heat the precipitating electrons. These electrons drive spikes of intense parallel electric field with characteristics similar to the TDSs seen in the VAP data. The decoupling of the whistler wave and the nonlinear electrostatic component is shown in PIC simulation in the inhomogeneous magnetic field system. These effects are observed by the Van Allen Probes in the radiation belts. The precipitating hot electrons propagate away from the source region in intense bunches rather than as a smooth flux.

  18. Surface hardening alloy VT6 of electric explosion and by electron beam

    International Nuclear Information System (INIS)

    Ivanov, Yu. F.; Kobzareva, T. Yu.; Gromov, V. E.; Soskova, N. A.; Budovskikh, E. A.; Raikov, S. V.

    2014-01-01

    The aim is to study the phase composition, structure and properties of the surface layer of the VT6 titanium alloy, subjected to combined treatment, consisting of alloying by the plasma of an electric explosion of a graphite fiber with a charge of the SiC powder and subsequent exposure by a high-intense electron beam. As a result of such treatment, a multiphase surface layer with a submicron and nanosize structure forms with the microhardness manifold exceeding its value in the sample volume are presented

  19. The electronic fine structure of 4-nitrophenyl functionalized single-walled carbon nanotubes

    International Nuclear Information System (INIS)

    Chakraborty, Amit K; Coleman, Karl S; Dhanak, Vinod R

    2009-01-01

    Controlling the electronic structure of carbon nanotubes (CNTs) is of great importance to various CNT based applications. Herein the electronic fine structure of single-walled carbon nanotube films modified with 4-nitrophenyl groups, produced following reaction with 4-nitrobenzenediazonium tetrafluoroborate, was investigated for the first time. Various techniques such as x-ray and ultra-violet photoelectron spectroscopy, and near edge x-ray absorption fine structure studies were used to explore the electronic structure, and the results were compared with the measured electrical resistances. A reduction in number of the π electronic states in the valence band consistent with the increased resistance of the functionalized nanotube films was observed.

  20. Restructuring in the Electricity Markets and Structural Transformation in Turkish Electricity Market

    Directory of Open Access Journals (Sweden)

    Hakan ÇETİNTAŞ

    2015-07-01

    Full Text Available Electricity markets are changed over from monopolistic to competitive structure. In many countries liberalization process in electricity markets began after 1980. In this study models for restructuring the electricity markets are explained with the natural monopoly and its regulation which is discussed in economic theory over many years. Then structural transformation in Turkish Electricity Market is explained within the legal arrangament framework and in liberalization process of electricity markets current state of Turkey is evaluated. In Turkey, the reform process in electricity market began with the liberalization of production and ıt is contiuned to change the design of the wholesale market. There has been significant progress for energy exchange by the establishment of EPİAŞ with the Electricity Market Law Numbered 6446 in 2013.

  1. Surface electron structure of short-period semiconductor superlattice

    International Nuclear Information System (INIS)

    Bartos, I.; Czech Academy Science, Prague,; Strasser, T.; Schattke, W.

    2004-01-01

    Full text: Semiconductor superlattices represent man-made crystals with unique physical properties. By means of the directed layer-by-layer molecular epitaxy growth their electric properties can be tailored (band structure engineering). Longer translational periodicity in the growth direction is responsible for opening of new electron energy gaps (minigaps) with surface states and resonances localized at superlattice surfaces. Similarly as for the electron structure of the bulk, a procedure enabling to modify the surface electron structure of superlattices is desirable. Short-period superlattice (GaAs) 2 (AlAs) 2 with unreconstructed (100) surface is investigated in detail. Theoretical description in terms of full eigenfunctions of individual components has to be used. The changes of electron surface state energies governed by the termination of a periodic crystalline potential, predicted on simple models, are confirmed for this system. Large surface state shifts are found in the lowest minigap of the superlattice when this is terminated in four different topmost layer configurations. The changes should be observable in angle resolved photoelectron spectroscopy as demonstrated in calculations based on the one step model of photoemission. Surface state in the center of the two dimensional Brillouin zone moves from the bottom of the minigap (for the superlattice terminated by two bilayers of GaAs) to its top (for the superlattice terminated by two bilayers of AlAs) where it becomes a resonance. No surface state/resonance is found for a termination with one bilayer of AlAs. The surface state bands behave similarly in the corresponding gaps of the k-resolved section of the electron band structure. The molecular beam epitaxy, which enables to terminate the superlattice growth with atomic layer precision, provides a way of tuning the superlattice surface electron structure by purely geometrical means. The work was supported by the Grant Agency of the Academy of Sciences

  2. Structure of conduction electrons on polysilanes

    Energy Technology Data Exchange (ETDEWEB)

    Ichikawa, Tsuneki [Hokkaido Univ., Sapporo (Japan); Kumagai, Jun

    1998-10-01

    The orbital structures of conduction electrons on permethylated oligosilane, Si{sub 2n}(CH{sub 3}){sub 2n+2}(n = 2 - 8), and poly(cyclohexylmethylsilane) have been determined by the electron spin-echo envelope modulation signals of the radical anions of these silanes in a deuterated rigid matrix at 77 K. The conduction electron on permethylated oligosilane is delocalized over the entire main chain, whereas that on poly(cyclohexylmethylsilane) is localized on a part of the main chain composed of about six Si atoms. Quantum-chemical calculations suggest that Anderson localization due to fluctuation of {sigma} conjugation by conformational disorder of the main chain is responsible for the localization of both the conduction electron and the hole. (author)

  3. Electronic structure of MgB2

    Indian Academy of Sciences (India)

    Abstract. Results of ab initio electronic structure calculations on the compound MgB2 using the. FPLAPW method employing GGA for the exchange-correlation energy are presented. Total energy minimization enables us to estimate the equilibrium volume, c/a ratio and the bulk modulus, all of which are in excellent ...

  4. Electronic structure of Fe-based superconductors

    Indian Academy of Sciences (India)

    Abstract. Fe-based superconductors have drawn much attention during the last decade due to the presence of superconductivity in materials containing the magnetic element, Fe, and the coexistence of superconductivity and magnetism. Extensive study of the electronic structure of these systems suggested the dominant ...

  5. Electronic structure of Fe-based superconductors

    Indian Academy of Sciences (India)

    2015-05-29

    May 29, 2015 ... Fe-based superconductors have drawn much attention during the last decade due to the presence of superconductivity in materials containing the magnetic element, Fe, and the coexistence of superconductivity and magnetism. Extensive study of the electronic structure of these systems suggested the ...

  6. Electronic structure of MgB 2

    Indian Academy of Sciences (India)

    Results of ab initio electronic structure calculations on the compound MgB2 using the FPLAPW method employing GGA for the exchange-correlation energy are presented. Total energy minimization enables us to estimate the equilibrium volume, / ratio and the bulk modulus, all of which are in excellent agreement with ...

  7. The electronic structure of antiferromagnetic chromium

    DEFF Research Database (Denmark)

    Skriver, Hans Lomholt

    1981-01-01

    The author has used the local spin density formalism to perform self-consistent calculations of the electronic structure of chromium in the non-magnetic and commensurate antiferromagnetic phases, as a function of the lattice parameter. A change of a few per cent in the atomic radius brings...

  8. Electronic structure calculations of calcium silicate hydrates

    International Nuclear Information System (INIS)

    Sterne, P.A.; Meike, A.

    1995-11-01

    Many phases in the calcium-silicate-hydrate system can develop in cement exposed over long periods of time to temperatures above 25 C. As a consequence, chemical reactions involving these phases can affect the relative humidity and water chemistry of a radioactive waste repository that contains significant amounts of cement. In order to predict and simulate these chemical reactions, the authors are developing an internally consistent database of crystalline Ca-Si-hydrate structures. The results of first principles electronic structure calculations on two such phases, wollastonite (CaSiO 3 ) and xonotlite (Ca 6 Si 6 O 17 (OH) 2 ), are reported here. The calculated ground state properties are in very good agreement with experiment, providing equilibrium lattice parameters within about 1--1.4% of the experimentally reported values. The roles of the different types of oxygen atoms, which are fundamental to understanding the energetics of crystalline Ca-Si-hydrates are briefly discussed in terms of their electronic state densities. The good agreement with experiment for the lattice parameters and the consistency of the electronic density of states features for the two structures demonstrate the applicability of these electronic structure methods in calculating the fundamental properties of these phases

  9. Electronic, electrical and magnetic ceramics synthesis and characterization

    International Nuclear Information System (INIS)

    Calix, V.S.; Saligan, P.P.; Naval, P.C.

    1989-01-01

    This paper describes the research and development activities of the Philippine Nuclear Research Institute (PNRI) on the synthesis and characterization of soft and hard ferrites and some beta alumina type superionic conductor materials. XRD, XRF and Moessbauer effect spectrometry are used to determine the structure phases, compositions and some magnetic properties of the materials. Effects of composition and preparation methods on the bulk electronic and magnetic properties are also discussed. (Auth.). 6 figs.; 3 tabs

  10. A deterministic model for the growth of non-conducting electrical tree structures

    International Nuclear Information System (INIS)

    Dodd, S J

    2003-01-01

    Electrical treeing is of interest to the electrical generation, transmission and distribution industries as it is one of the causes of insulation failure in electrical machines, switchgear and transformer bushings. In this paper a deterministic electrical tree growth model is described. The model is based on electrostatics and local electron avalanches to model partial discharge activity within the growing tree structure. Damage to the resin surrounding the tree structure is dependent on the local electrostatic energy dissipation by partial discharges within the tree structure and weighted by the magnitudes of the local electric fields in the resin surrounding the tree structure. The model is successful in simulating the formation of branched structures without the need of a random variable, a requirement of previous stochastic models. Instability in the spatial development of partial discharges within the tree structure takes the role of the stochastic element as used in previous models to produce branched tree structures. The simulated electrical trees conform to the experimentally observed behaviour; tree length versus time and electrical tree growth rate as a function of applied voltage for non-conducting electrical trees. The phase synchronous partial discharge activity and the spatial distribution of emitted light from the tree structure are also in agreement with experimental data for non-conducting trees as grown in a flexible epoxy resin and in polyethylene. The fact that similar tree growth behaviour is found using pure amorphous (epoxy resin) and semicrystalline (polyethylene) materials demonstrate that neither annealed or quenched noise, representing material inhomogeneity, is required for the formation of irregular branched structures (electrical trees). Instead, as shown in this paper, branched growth can occur due to the instability of individual discharges within the tree structure

  11. Adaptive Electronic Quizzing Method for Introductory Electrical Circuit Course

    Directory of Open Access Journals (Sweden)

    Issa Batarseh

    2009-08-01

    Full Text Available The interactive technical electronic book, TechEBook, currently under development at the University of Central Florida, provides a useful tool for engineers and scientists through unique features compared to the most used traditional electrical circuit textbooks available in the market. TechEBook has comprised the two worlds of classical circuit books and an interactive operating platform such as laptops and desktops utilizing Java Virtual Machine operator. The TechEBook provides an interactive applets screen that holds many modules, in which each had a specific application in the self learning process. This paper describes one of the interactive techniques in the TechEBook known as, QuizMe, for evaluating the readers’ performance and the overall understanding for all subjects at any stage. The QuizMe will be displayed after each section in the TechEBook for the user to evaluate his/her understanding, which introduces the term me-learning, as a comprehensive full experience for self or individualized education. In this paper, a practical example of applying the QuizMe feature is discussed as part of a basic electrical engineering course currently given at the University of Central Florida.

  12. Thermal Management and Reliability of Power Electronics and Electric Machines

    Energy Technology Data Exchange (ETDEWEB)

    Narumanchi, Sreekant

    2016-08-03

    Increasing the number of electric-drive vehicles (EDVs) on America's roads has been identified as a strategy with near-term potential for dramatically decreasing the nation's dependence on oil -- by the U.S. Department of Energy, the federal cross-agency EV-Everywhere Challenge, and the automotive industry. Mass-market deployment will rely on meeting aggressive technical targets, including improved efficiency and reduced size, weight, and cost. Many of these advances will depend on optimization of thermal management. Effective thermal management is critical to improving the performance and ensuring the reliability of EDVs. Efficient heat removal makes higher power densities and lower operating temperatures possible, and in turn enables cost and size reductions. The National Renewable Energy Laboratory (NREL), along with DOE and industry partners is working to develop cost-effective thermal management solutions to increase device and component power densities. In this presentation, the activities in recent years related to thermal management and reliability of automotive power electronics and electric machines will be presented.

  13. Thermal Management and Reliability of Power Electronics and Electric Machines

    Energy Technology Data Exchange (ETDEWEB)

    Narumanchi, Sreekant

    2016-06-13

    Increasing the number of electric-drive vehicles (EDVs) on America's roads has been identified as a strategy with near-term potential for dramatically decreasing the nation's dependence on oil - by the U.S. Department of Energy, the federal cross-agency EV-Everywhere Challenge, and the automotive industry. Mass-market deployment will rely on meeting aggressive technical targets, including improved efficiency and reduced size, weight, and cost. Many of these advances will depend on optimization of thermal management. Effective thermal management is critical to improving the performance and ensuring the reliability of EDVs. Efficient heat removal makes higher power densities and lower operating temperatures possible, and in turn enables cost and size reductions. The National Renewable Energy Laboratory (NREL), along with DOE and industry partners is working to develop cost-effective thermal management solutions to increase device and component power densities. In this presentation, the activities in recent years related to thermal management and reliability of automotive power electronics and electric machines are presented.

  14. Electronic structure and electron dynamics at Si(100)

    Energy Technology Data Exchange (ETDEWEB)

    Weinelt, M. [Universitaet Erlangen-Nuernberg, Lehrstuhl fuer Festkoerperphysik, Erlangen (Germany); Max-Born-Institut, Berlin (Germany); Kutschera, M.; Schmidt, R.; Orth, C.; Fauster, T. [Universitaet Erlangen-Nuernberg, Lehrstuhl fuer Festkoerperphysik, Erlangen (Germany); Rohlfing, M. [International University Bremen, School of Engineering and Science, P.O. Box 750 561, Bremen (Germany)

    2005-02-01

    The electronic structure and electron dynamics at a Si(100) surface is studied by two-photon photoemission (2PPE). At 90 K the occupied D{sub up} dangling-bond state is located 150{+-}50 meV below the valence-band maximum (VBM) at the center of the surface Brillouin zone anti {gamma} and exhibits an effective hole mass of (0.5{+-}0.15)m{sub e}. The unoccupied D{sub down} band has a local minimum at anti {gamma} at 650{+-}50 meV above the VBM and shows strong dispersion along the dimer rows of the c(4 x 2) reconstructed surface. At 300 K the D{sub down} position shifts comparable to the Si conduction-band minimum by 40 meV to lower energies but the dispersion of the dangling-bond states is independent of temperature. The surface band bending for p-doped silicon is less than 30 meV, while acceptor-type defects cause significant and preparation-dependent band bending on n-doped samples. 2PPE spectra of Si(100) are dominated by interband transitions between the occupied and unoccupied surface states and emission out of transiently and permanently charged surface defects. Including electron-hole interaction in many-body calculations of the quasi-particle band structure leads us to assign a dangling-bond split-off state to a quasi-one-dimensional surface exciton with a binding energy of 130 meV. Electrons resonantly excited to the unoccupied D{sub down} dangling-bond band with an excess energy of about 350 meV need 1.5{+-}0.2 ps to scatter via phonon emission to the band bottom at anti {gamma} and relax within 5 ps with an excited hole in the occupied surface band to form an exciton living for nanoseconds. (orig.)

  15. Diamond surface: atomic and electronic structure

    International Nuclear Information System (INIS)

    Pate, B.B.

    1984-01-01

    Experimental studies of the diamond surface (with primary emphasis on the (111) surface) are presented. Aspects of the diamond surface which are addressed include (1) the electronic structure, (2) the atomic structure, and (3) the effect of termination of the lattice by foreign atoms. Limited studies of graphite are discussed for comparison with the diamond results. Experimental results from valence band and core level photoemission spectroscopy (PES), Auger electron spectroscopy (AES), low energy electron diffraction (LEED), and carbon 1s near edge x-ray absorption fine structure (NEXAFS) spectroscopy (both the total electron yield (TEY) and Auger electron yield (AEY) techniques) are used to study and characterize both the clean and hydrogenated surface. In addition, the interaction of hydrogen with the diamond surface is examined using results from vibrational high resolution low energy electron loss spectroscopy (in collaboration with Waclawski, Pierce, Swanson, and Celotta at the National Bureau of Standards) and photon stimulated ion desorption (PSID) yield at photon energies near the carbon k-edge (hv greater than or equal to 280 eV). Both EELS and PSID verify that the mechanically polished 1 x 1 surface is hydrogen terminated and also that the reconstructed surface is hydrogen free. The (111) 2 x 2/2 x 1 reconstructed surface is obtained from the hydrogenated (111) 1 x 1:H surface by annealing to approx. = 1000 0 C. We observe occupied intrinsic surface states and a surface chemical shift (0.95 +- 0.1 eV) to lower binding energy of the carbon 1s level on the hydrogen-free reconstructed surface. Atomic hydrogen is found to be reactive with the reconstructed surface, while molecular hydrogen is relatively inert. Exposure of the reconstructed surface to atomic hydrogen results in chemisorption of hydrogen and removal of the intrinsic surface state emission in and near the band gap region

  16. Tripolar electric field Structure in guide field magnetic reconnection

    Science.gov (United States)

    Fu, Song; Huang, Shiyong; Zhou, Meng; Ni, Binbin; Deng, Xiaohua

    2018-03-01

    It has been shown that the guide field substantially modifies the structure of the reconnection layer. For instance, the Hall magnetic and electric fields are distorted in guide field reconnection compared to reconnection without guide fields (i.e., anti-parallel reconnection). In this paper, we performed 2.5-D electromagnetic full particle simulation to study the electric field structures in magnetic reconnection under different initial guide fields (Bg). Once the amplitude of a guide field exceeds 0.3 times the asymptotic magnetic field B0, the traditional bipolar Hall electric field is clearly replaced by a tripolar electric field, which consists of a newly emerged electric field and the bipolar Hall electric field. The newly emerged electric field is a convective electric field about one ion inertial length away from the neutral sheet. It arises from the disappearance of the Hall electric field due to the substantial modification of the magnetic field and electric current by the imposed guide field. The peak magnitude of this new electric field increases linearly with the increment of guide field strength. Possible applications of these results to space observations are also discussed.

  17. Tripolar electric field Structure in guide field magnetic reconnection

    Directory of Open Access Journals (Sweden)

    S. Fu

    2018-03-01

    Full Text Available It has been shown that the guide field substantially modifies the structure of the reconnection layer. For instance, the Hall magnetic and electric fields are distorted in guide field reconnection compared to reconnection without guide fields (i.e., anti-parallel reconnection. In this paper, we performed 2.5-D electromagnetic full particle simulation to study the electric field structures in magnetic reconnection under different initial guide fields (Bg. Once the amplitude of a guide field exceeds 0.3 times the asymptotic magnetic field B0, the traditional bipolar Hall electric field is clearly replaced by a tripolar electric field, which consists of a newly emerged electric field and the bipolar Hall electric field. The newly emerged electric field is a convective electric field about one ion inertial length away from the neutral sheet. It arises from the disappearance of the Hall electric field due to the substantial modification of the magnetic field and electric current by the imposed guide field. The peak magnitude of this new electric field increases linearly with the increment of guide field strength. Possible applications of these results to space observations are also discussed.

  18. Phonon-assisted hopping of an electron on a Wannier-Stark ladder in a strong electric field

    International Nuclear Information System (INIS)

    Emin, D.; Hart, C.F.

    1987-01-01

    With the application of a spatially constant electric field, the degeneracy of electronic energy levels of geometrically equivalent sites of a crystal is generally lifted. As a result, the electric field causes the electronic eigenstates of a one-dimensional periodic chain to become localized. In particular, they are Wannier-Stark states. With sufficiently large electric-field strengths these states become sufficiently well localized that it becomes appropriate to consider electronic transport to occur via a succession of phonon-assisted hops between the localized Wannier-Stark states. In this paper, we present calculations of the drift velocity arising from acoustic- and optical-phonon-assisted hopping motion between Wannier-Stark states. When the intersite electronic transfer energy is sufficiently small so that the Wannier-Stark states are essentially each confined to a single atomic site, the transport reduces to that of a small polaron. In this regime, while the drift velocity initially rises with increasing electric field strength, the drift velocity ultimately falls with increasing electric-field strength at extremely large electric fields. More generally, for common values of the electronic bandwidth and electric field strength, the Wannier-Stark states span many sites. At sufficiently large electric fields, the energy separation between Wannier-Stark states exceeds the energy uncertainty associated with the carrier's interaction with phonons. Then, it is appropriate to treat the electronic transport in terms of phonon-assisted hopping between Wannier-Stark states. The resulting high-field drift velocity falls with increasing field strength in a series of steps. Thus, we find a structured negative differential mobility at large electric fields

  19. Electronic structure and electron momentum density in TiSi

    Energy Technology Data Exchange (ETDEWEB)

    Ghaleb, A.M. [Department of Physics, College of Science, University of Kirkuk, Kirkuk (Iraq); Mohammad, F.M. [Department of Physics, College of Science, University of Tikreet, Tikreet (Iraq); Sahariya, Jagrati [Department of Physics, University College of Science, M.L. Sukhadia University, Udaipur 313001, Rajasthan (India); Sharma, Mukesh [Physics Division, Forensic Science Laboratory, Jaipur, Rajasthan (India); Ahuja, B.L., E-mail: blahuja@yahoo.com [Department of Physics, University College of Science, M.L. Sukhadia University, Udaipur 313001, Rajasthan (India)

    2013-03-01

    We report the electron momentum density in titanium monosilicide using {sup 241}Am Compton spectrometer. Experimental Compton profile has been compared with the theoretical profiles computed using linear combination of atomic orbitals (LCAO). The energy bands, density of states and Fermi surface structures of TiSi are reported using the LCAO and the full potential linearized augmented plane wave methods. Theoretical anisotropies in directional Compton profiles are interpreted in terms of energy bands. To confirm the conducting behavior, we also report the real space analysis of experimental Compton profile of TiSi.

  20. Selective Electron Beam Melting Manufacturing of Electrically Small Antennas

    Directory of Open Access Journals (Sweden)

    Saad Mufti

    2017-11-01

    Full Text Available Real estate pressures in modern electronics have resulted in the need for electrically small antennas, which have subsequently garnered interest amongst researchers and industry alike. These antennas are characterized by their largest dimensions translating to a fraction of the operating wavelength; such a diminutive size comes at the expense of reduced gain and efficiency, and a worse overall match to a corresponding power source. In order to compensate for this deterioration in performance, antenna designers must turn towards increasingly complex and voluminous geometries, well beyond the capabilities of traditional manufacturing techniques. We present voluminous metal antennas, based on a novel inverted-F design, and fabricated using the emergent selective electron beam melting manufacturing technique, a type of powder bed fusion process. As predicted by small antenna theory, simulation results presented show in increase in the antenna’s efficiency as it is voluminously expanded into the third dimension. Measurement results illustrate that key trends observed from simulations are upheld; however, further understanding of the electromagnetic properties of raw materials, in particular how these change during the printing process, is needed. Nevertheless, this type of additive manufacturing technique is suitable for rapid prototyping of novel and complex antenna geometries, and is a promising avenue for further research and maturation.

  1. Tunable electronic, electrical and optical properties of graphene oxide sheets by ion irradiation

    Science.gov (United States)

    Jayalakshmi, G.; Saravanan, K.; Panigrahi, B. K.; Sundaravel, B.; Gupta, Mukul

    2018-05-01

    The tunable electronic, electrical and optical properties of graphene oxide (GO) sheets were investigated using a controlled reduction by 500 keV Ar+-ion irradiation. The carbon to oxygen ratio of the GO sheets upon the ion beam reduction has been estimated using resonant Rutherford backscattering spectrometry analyses and its effect on the electrical and optical properties of GO sheets has been studied using sheet resistance measurements and photoluminescence (PL) measurements. The restoration of sp 2-hybridized carbon atoms within the sp 3 matrix is found to be increases with increasing the Ar+-ion fluences as evident from Fourier transform infrared, and x-ray absorption near-edge structure measurements. The decrease in the number of disorder-induced local density of states (LDOSs) within the π-π* gap upon the reduction causes the shifting of PL emission from near infra-red to blue region and decreases the sheet resistance. The improved electrical and optical properties of GO sheets were correlated to the decrease in the number of LDOSs within the π-π* gap. Our experimental investigations suggest ion beam irradiation is one of an effective approaches to reduce GO to RGO and to tailor its electronic, electrical and optical properties.

  2. Communication: theoretical study of ThO for the electron electric dipole moment search.

    Science.gov (United States)

    Skripnikov, L V; Petrov, A N; Titov, A V

    2013-12-14

    An experiment to search for the electron electric dipole moment (eEDM) on the metastable H(3)Δ1 state of ThO molecule was proposed and now prepared by the ACME Collaboration [http://www.electronedm.org]. To interpret the experiment in terms of eEDM and dimensionless constant kT, P characterizing the strength of the T,P-odd pseudoscalar-scalar electron-nucleus neutral current interaction, an accurate theoretical study of an effective electric field on electron, Eeff, and a parameter of the T,P-odd pseudoscalar-scalar interaction, WT, P, in ThO is required. We report our results for Eeff (84 GV/cm) and WT, P (116 kHz) together with the hyperfine structure constant, molecule frame dipole moment, and H(3)Δ1 → X(1)Σ(+) transition energy, which can serve as a measure of reliability of the obtained Eeff and WT, P values. Besides, our results include a parity assignment and evaluation of the electric-field dependence for the magnetic g factors in the Ω-doublets of H(3)Δ1.

  3. Bosch automotive electrics and automotive electronics systems and components, networking and hybrid drive

    CERN Document Server

    2014-01-01

    The significance of electrical and electronic systems has increased considerably in the last few years and this trend is set to continue. The characteristics feature of innovative systems is the fact that they can work together in a network. This requires powerful bus systems that the electronic control units can use to exchange information. Networking and the various bus systems used in motor vehicles are the prominent new topic in the 5th edition of the "Automotive Electric, Automotive Electronics" technical manual. The existing chapters have also been updated, so that this new edition brings the reader up to date on the subjects of electrical and electronic systems in the motor vehicle. Content Electrical and electronical systems – Basic principles of networking - Examples of networked vehicles – Bus systems – Architecture of electronic systems – Mechatronics – Elektronics – Electronic control Units – Software – Sensors – Actuators – Hybrid drives – Vehicle electrical system – Start...

  4. Structural, dielectric and electrical properties of ...

    Indian Academy of Sciences (India)

    Administrator

    Detailed studies of dielectric properties of the compound as a function of temperature at ... Microscope (Jeol, JSM-840), operated at 20 kV. The sin- tered pellet was .... grain boundaries, and provides the true picture of the electrical properties of ...

  5. Structural, dielectric and electrical properties of ...

    Indian Academy of Sciences (India)

    tric and ferroelectric memory devices at room temperature,. (Choudhary et al 1999; ... is both due to short- and long-range motions of charge carriers. Though a lot of ... (electric field = 12 kV/cm, time = 8 h) at different tempera- tures using a ...

  6. Teaching electronics to first-year non-electrical engineering students

    OpenAIRE

    Dahnoun, Naim

    2017-01-01

    Teaching electronics is not only for electrical and electronics students but also for mechanical, aerospace, engineering design, civil and engineering mathematics programmes, which are likely to have electronics units as part of their curriculum. To teach electronics for these non-electronic programmes is very challenging in many aspects. First, the electronics unit has to satisfy the learning outcomes for each programme. Second, the student's motivation is normally very low since electronics...

  7. 3D Printed structural electronics: embedding and connecting electronic components into freeform electronic devices

    NARCIS (Netherlands)

    Maalderink, H.H.H.; Bruning, F.B.J.; Schipper, M.M.R. de; Werff, J.J.J. van der; Germs, W.W.C.; Remmers, J.J.C.; Meinders, E.R.

    2018-01-01

    The need for personalised and smart products drives the development of structural electronics with mass-customisation capability. A number of challenges need to be overcome in order to address the potential of complete free form manufacturing of electronic devices. One key challenge is the

  8. 3D Printed structural electronics : embedding and connecting electronic components into freeform electronic devices

    NARCIS (Netherlands)

    Maalderink, H.H.; Bruning, F.B.J.; de Schipper, M.R.; van der Werff, J.J.; Germs, W.C.; Remmers, J.J.C.; Meinders, E.R.

    2018-01-01

    The need for personalised and smart products drives the development of structural electronics with mass-customisation capability. A number of challenges need to be overcome in order to address the potential of complete free form manufacturing of electronic devices. One key challenge is the

  9. Electronic structure of super heavy atoms revisited

    International Nuclear Information System (INIS)

    Gitman, D M; Levin, A D; Tyutin, I V; Voronov, B L

    2013-01-01

    The electronic structure of an atom with Z ⩽ Z c = 137 can be described by the Dirac equation with the Coulomb field of a point charge Ze. It was believed that the Dirac equation with Z > Z c poses difficulties because the formula for the lower energy level of the Dirac Hamiltonian formally gives imaginary eigenvalues. But a strict mathematical consideration shows that difficulties with the electronic spectrum for Z > Z c do not arise if the Dirac Hamiltonian is correctly defined as a self-adjoint operator. In this paper, we briefly summarize the main physical results of that consideration in a form suitable for physicists with some additional new details and numerical calculations of the electronic spectra. (comment)

  10. Electronic Structure of Strongly Correlated Materials

    CERN Document Server

    Anisimov, Vladimir

    2010-01-01

    Electronic structure and physical properties of strongly correlated materials containing elements with partially filled 3d, 4d, 4f and 5f electronic shells is analyzed by Dynamical Mean-Field Theory (DMFT). DMFT is the most universal and effective tool used for the theoretical investigation of electronic states with strong correlation effects. In the present book the basics of the method are given and its application to various material classes is shown. The book is aimed at a broad readership: theoretical physicists and experimentalists studying strongly correlated systems. It also serves as a handbook for students and all those who want to be acquainted with fast developing filed of condensed matter physics.

  11. Electronic band structures of binary skutterudites

    International Nuclear Information System (INIS)

    Khan, Banaras; Aliabad, H.A. Rahnamaye; Saifullah; Jalali-Asadabadi, S.; Khan, Imad; Ahmad, Iftikhar

    2015-01-01

    The electronic properties of complex binary skutterudites, MX 3 (M = Co, Rh, Ir; X = P, As, Sb) are explored, using various density functional theory (DFT) based theoretical approaches including Green's Function (GW) as well as regular and non-regular Tran Blaha modified Becke Jhonson (TB-mBJ) methods. The wide range of calculated bandgap values for each compound of this skutterudites family confirm that they are theoretically as challenging as their experimental studies. The computationally expensive GW method, which is generally assume to be efficient in the reproduction of the experimental bandgaps, is also not very successful in the calculation of bandgaps. In this article, the issue of the theoretical bandgaps of these compounds is resolved by reproducing the accurate experimental bandgaps, using the recently developed non-regular TB-mBJ approach, based on DFT. The effectiveness of this technique is due to the fact that a large volume of the binary skutterudite crystal is empty and hence quite large proportion of electrons lie outside of the atomic spheres, where unlike LDA and GGA which are poor in the treatment of these electrons, this technique properly treats these electrons and hence reproduces the clear electronic picture of these compounds. - Highlights: • Theoretical and experimental electronic band structures of binary skutterudites are reviewed. • The literature reveals that none of the existing theoretical results are consistent with the experiments. • GW, regular and non-regular TB-mBJ methods are used to reproduce the correct results. • The GW and regular TB-mBJ results are better than the available results in literature. • However, non-regular TB-mBJ reproduces the correct experimental band structures

  12. Electronic band structures of binary skutterudites

    Energy Technology Data Exchange (ETDEWEB)

    Khan, Banaras [Center for Computational Materials Science, University of Malakand, Chakdara (Pakistan); Department of Physics, University of Malakand, Chakdara (Pakistan); Aliabad, H.A. Rahnamaye [Department of Physics, Hakim Sabzevari University, Sabzevar (Iran, Islamic Republic of); Saifullah [Center for Computational Materials Science, University of Malakand, Chakdara (Pakistan); Department of Physics, University of Malakand, Chakdara (Pakistan); Jalali-Asadabadi, S. [Department of Physics, Faculty of Science, University of Isfahan (UI), 81744 Isfahan (Iran, Islamic Republic of); Khan, Imad [Center for Computational Materials Science, University of Malakand, Chakdara (Pakistan); Department of Physics, University of Malakand, Chakdara (Pakistan); Ahmad, Iftikhar, E-mail: ahma5532@gmail.com [Center for Computational Materials Science, University of Malakand, Chakdara (Pakistan); Department of Physics, University of Malakand, Chakdara (Pakistan)

    2015-10-25

    The electronic properties of complex binary skutterudites, MX{sub 3} (M = Co, Rh, Ir; X = P, As, Sb) are explored, using various density functional theory (DFT) based theoretical approaches including Green's Function (GW) as well as regular and non-regular Tran Blaha modified Becke Jhonson (TB-mBJ) methods. The wide range of calculated bandgap values for each compound of this skutterudites family confirm that they are theoretically as challenging as their experimental studies. The computationally expensive GW method, which is generally assume to be efficient in the reproduction of the experimental bandgaps, is also not very successful in the calculation of bandgaps. In this article, the issue of the theoretical bandgaps of these compounds is resolved by reproducing the accurate experimental bandgaps, using the recently developed non-regular TB-mBJ approach, based on DFT. The effectiveness of this technique is due to the fact that a large volume of the binary skutterudite crystal is empty and hence quite large proportion of electrons lie outside of the atomic spheres, where unlike LDA and GGA which are poor in the treatment of these electrons, this technique properly treats these electrons and hence reproduces the clear electronic picture of these compounds. - Highlights: • Theoretical and experimental electronic band structures of binary skutterudites are reviewed. • The literature reveals that none of the existing theoretical results are consistent with the experiments. • GW, regular and non-regular TB-mBJ methods are used to reproduce the correct results. • The GW and regular TB-mBJ results are better than the available results in literature. • However, non-regular TB-mBJ reproduces the correct experimental band structures.

  13. Electronic structure of Pu carbides: photoelectron spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Gouder, T.; Havela, L.; Shick, Alexander; Huber, F.

    2008-01-01

    Roč. 403, č. 5-9 (2008), s. 852-853 ISSN 0921-4526 R&D Projects: GA AV ČR(CZ) IAA100100530 Grant - others:EU(XE) RITA -CT-2006-026176 Institutional research plan: CEZ:AV0Z10100520 Keywords : photoemission * electronic structure * plutonium Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.822, year: 2008

  14. Structural and electronic properties of thallium compounds

    International Nuclear Information System (INIS)

    Paliwal, Neetu; Srivastava, Vipul

    2016-01-01

    The tight binding linear muffin-tin-orbital (TB-LMTO) method within the local density approximation (LDA has been used to calculate structural and electronic properties of thallium pnictides TlX (X=Sb, Bi) at high pressure. As a function of volume, the total energy is evaluated. Apart from this, the lattice parameter (a_0), bulk modulus (B_0), band structure (BS) and density of states (DOS) are calculated. From energy band diagram we observed metallic behaviour in TlSb and TlBi compounds. The values of equilibrium lattice constants and bulk modulus are agreed well with the available data.

  15. Structural and electronic properties of thallium compounds

    Energy Technology Data Exchange (ETDEWEB)

    Paliwal, Neetu, E-mail: neetumanish@gmail.com [Department of Physics, AISECT University Bhopal, 464993 (India); Srivastava, Vipul [Department of Engineering Physics, NRI Institute of Research & Technology, Raisen Road, Bhopal, 462021 (India)

    2016-05-06

    The tight binding linear muffin-tin-orbital (TB-LMTO) method within the local density approximation (LDA has been used to calculate structural and electronic properties of thallium pnictides TlX (X=Sb, Bi) at high pressure. As a function of volume, the total energy is evaluated. Apart from this, the lattice parameter (a{sub 0}), bulk modulus (B{sub 0}), band structure (BS) and density of states (DOS) are calculated. From energy band diagram we observed metallic behaviour in TlSb and TlBi compounds. The values of equilibrium lattice constants and bulk modulus are agreed well with the available data.

  16. Structural dynamics of electronic and photonic systems

    CERN Document Server

    Suhir, Ephraim; Steinberg, David S

    2011-01-01

    The proposed book will offer comprehensive and versatile methodologies and recommendations on how to determine dynamic characteristics of typical micro- and opto-electronic structural elements (printed circuit boards, solder joints, heavy devices, etc.) and how to design a viable and reliable structure that would be able to withstand high-level dynamic loading. Particular attention will be given to portable devices and systems designed for operation in harsh environments (such as automotive, aerospace, military, etc.)  In-depth discussion from a mechanical engineer's viewpoint will be conducte

  17. Industrial electricity demand for Turkey: A structural time series analysis

    International Nuclear Information System (INIS)

    Dilaver, Zafer; Hunt, Lester C.

    2011-01-01

    This research investigates the relationship between Turkish industrial electricity consumption, industrial value added and electricity prices in order to forecast future Turkish industrial electricity demand. To achieve this, an industrial electricity demand function for Turkey is estimated by applying the structural time series technique to annual data over the period 1960 to 2008. In addition to identifying the size and significance of the price and industrial value added (output) elasticities, this technique also uncovers the electricity Underlying Energy Demand Trend (UEDT) for the Turkish industrial sector and is, as far as is known, the first attempt to do this. The results suggest that output and real electricity prices and a UEDT all have an important role to play in driving Turkish industrial electricity demand. Consequently, they should all be incorporated when modelling Turkish industrial electricity demand and the estimated UEDT should arguably be considered in future energy policy decisions concerning the Turkish electricity industry. The output and price elasticities are estimated to be 0.15 and - 0.16 respectively, with an increasing (but at a decreasing rate) UEDT and based on the estimated equation, and different forecast assumptions, it is predicted that Turkish industrial electricity demand will be somewhere between 97 and 148 TWh by 2020. -- Research Highlights: → Estimated output and price elasticities of 0.15 and -0.16 respectively. → Estimated upward sloping UEDT (i.e. energy using) but at a decreasing rate. → Predicted Turkish industrial electricity demand between 97 and 148 TWh in 2020.

  18. Decentralized energy supply and electricity market structures

    OpenAIRE

    Weber, Christoph; Vogel, Philip

    2005-01-01

    Small decentralized power generation units (DG) are politically promoted because of their potential to reduce GHG-emissions and the existing dependency on fossil fuels. A long term goal of this promotion should be the creation of a level playing field for DG and conventional power generation. Due to the impact of DG on the electricity grid infrastructure, future regulation should consider the costs and benefits of the integration of decentralized energy generation units. Without an adequate c...

  19. Direct measurement of macroscopic electric fields produced by collective effects in electron-impact experiments

    International Nuclear Information System (INIS)

    Velotta, R.; Avaldi, L.; Camilloni, R.; Giammanco, F.; Spinelli, N.; Stefani, G.

    1996-01-01

    The macroscopic electric field resulting from the space charge produced in electron-impact experiments has been characterized by using secondary electrons of well-defined energy (e.g., Auger or autoionizing electrons) as a probe. It is shown that the measurement of the kinetic-energy shifts suffered by secondary electrons is a suitable tool for the analysis of the self-generated electric field in a low-density plasma. copyright 1996 The American Physical Society

  20. Investigation of the Use of Ecodesign Methods and Tools in the Electrical and Electronics Industries of Thailand

    OpenAIRE

    Samuelsson, Erik

    2008-01-01

    This investigation strives to determine the level of ecodesign awareness as well as to map the use of methods and tools for this concept in the electrical and electronics industries of Thailand. The foundation of the thesis is eight semi-structured qualitative research interviews performed with various people at Thai organisations, an electronics manufacturer in Thailand, and experts from Swedish, Danish and Thai universities. The research method has yielded the following results: The level o...

  1. Structural, optical and electrical properties of chemically deposited ...

    Indian Academy of Sciences (India)

    Structural, optical and electrical properties of chemically deposited nonstoichiometric copper ... One of these compounds, CuInSe2, with its optical absorption .... is clear from SEM images that the number of grains goes on increasing with the ...

  2. Electrical conductivity of metal–carbon nanotube structures: Effect of ...

    Indian Academy of Sciences (India)

    Administrator

    The electrical properties of asymmetric metal–carbon nanotube (CNT) structures have been studied using ... The models with asymmetric metal contacts and carbon nanotube bear resemblance to experimental ... ordinary mechanical strength.

  3. Surface morphology, structural and electrical properties of RF ...

    Indian Academy of Sciences (India)

    2018-05-19

    May 19, 2018 ... ITO thin films; sputtering; structure; electrical properties; AFM; Hall effect. 1. Introduction ... ness range (61–768 nm) and to see if this system present properties that .... using the Bragg equation, and the relation linking the inter-.

  4. Electric fields, electron production, and electron motion at the stripper foil in the Los Alamos Proton Storage Ring

    International Nuclear Information System (INIS)

    Plum, M.

    1995-01-01

    The beam instability at the Los Alamos Proton Storage Ring (PSR) most likely involves coupled oscillations between electrons and protons. For this instability to occur, there must be a strong source of electrons. Investigation of the various sources of electrons in the PSR had begun. Copious electron production is expected in the injection section because this section contains the stripper foil. This foil is mounted near the center of the beam pipe, and both circulating and injected protons pass through it, thus allowing ample opportunity for electron production. This paper discusses various mechanisms for electron production, beam-induced electric fields, and electron motion in the vicinity of the foil

  5. Electrical conductivity of polytetrafluoroethylene in dc and ac electric fields under continuous electron bombardment

    International Nuclear Information System (INIS)

    Khatipov, S.A.; Turdybekov, K.M.; Milinchuk, V.K.

    1993-01-01

    A study has been made of the time of the radiation current density in dc and ac (10 2 -5-10 3 Hz) electric fields (10 3 -5-10 5 V/cm) at temperatures from 80 to 393 K and dose rates from 5-10 3 Gy/sec, for PTFE films (50-180 μm) with various thermal prehistories, when exposed to continuous bombardment by 9-MeV electrons. It has been shown that the experimental results cannot be interpreted from the standpoint of free-charge conduction; they can be explained qualitatively within the framework of concepts of inhomogeneous ionization of the substance, due to the formation of short tracks

  6. Management of waste electrical and electronic equipment in Romania: A mini-review.

    Science.gov (United States)

    Ciocoiu, Carmen Nadia; Colesca, Sofia Elena; Rudăreanu, Costin; Popescu, Maria-Loredana

    2016-02-01

    Around the world there are growing concerns for waste electrical and electronic equipment. This is motivated by the harmful effects of waste electrical and electronic equipment on the environment, but also by the perspectives of materials recovery. Differences between countries regarding waste electrical and electronic equipment management are notable in the European Union. Romania is among the countries that have made significant efforts to comply with European Union regulations, but failed reaching the collection target. The article presents a mini review of the waste electrical and electronic equipment management system in Romania, based on legislation and policy documents, statistical data, research studies and reports published by national and international organisations. The article debates subjects like legislative framework, the electrical and electronic equipment Romanian market, the waste electrical and electronic equipment collection system, waste electrical and electronic equipment processing and waste electrical and electronic equipment behaviour. The recast of the European directive brings new challenges to national authorities and to other stakeholders involved in the waste electrical and electronic equipment management. Considering the fact that Romania has managed a collection rate of roughly 1 kg capita(-1) in the last years, the new higher collection targets established by the waste electrical and electronic equipment Directive offer a serious challenge for the management system. Therefore, another aim of the article is to highlight the positive and negative aspects in the Romanian waste electrical and electronic equipment field, in order to identify the flows that should be corrected and the opportunities that could help improve this system to the point of meeting the European standards imposed by the European Directive. © The Author(s) 2015.

  7. X-ray and photoelectron spectroscopy of the structure, reactivity, and electronic structure of semiconductor nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Hamad, Kimberly Sue [Univ. of California, Berkeley, CA (United States)

    2000-01-01

    Semiconductor nanocrystals are a system which has been the focus of interest due to their size dependent properties and their possible use in technological applications. Many chemical and physical properties vary systematically with the size of the nanocrystal and thus their study enables the investigation of scaling laws. Due to the increasing surface to volume ratio as size is decreased, the surfaces of nanocrystals are expected to have a large influence on their electronic, thermodynamic, and chemical behavior. In spite of their importance, nanocrystal surfaces are still relatively uncharacterized in terms of their structure, electronic properties, bonding, and reactivity. Investigation of nanocrystal surfaces is currently limited by what techniques to use, and which methods are suitable for nanocrystals is still being determined. This work presents experiments using x-ray and electronic spectroscopies to explore the structure, reactivity, and electronic properties of semiconductor (CdSe, InAs) nanocrystals and how they vary with size. Specifically, x-ray absorption near edge spectroscopy (XANES) in conjunction with multiple scattering simulations affords information about the structural disorder present at the surface of the nanocrystal. X-ray photoelectron spectroscopy (XPS) and ultra-violet photoelectron spectroscopy (UPS) probe the electronic structure in terms of hole screening, and also give information about band lineups when the nanocrystal is placed in electric contact with a substrate. XPS of the core levels of the nanocrystal as a function of photo-oxidation time yields kinetic data on the oxidation reaction occurring at the surface of the nanocrystal.

  8. Correlated electronic structure of CeN

    Energy Technology Data Exchange (ETDEWEB)

    Panda, S.K., E-mail: swarup.panda@physics.uu.se [Department of Physics and Astronomy, Uppsala University, P.O. Box 516, SE-751 20 Uppsala (Sweden); Di Marco, I. [Department of Physics and Astronomy, Uppsala University, P.O. Box 516, SE-751 20 Uppsala (Sweden); Delin, A. [Department of Physics and Astronomy, Uppsala University, P.O. Box 516, SE-751 20 Uppsala (Sweden); KTH Royal Institute of Technology, School of Information and Communication Technology, Department of Materials and Nano Physics, Electrum 229, SE-164 40 Kista (Sweden); KTH Royal Institute of Technology, Swedish e-Science Research Center (SeRC), SE-100 44 Stockholm (Sweden); Eriksson, O., E-mail: olle.eriksson@physics.uu.se [Department of Physics and Astronomy, Uppsala University, P.O. Box 516, SE-751 20 Uppsala (Sweden)

    2016-04-15

    Highlights: • The electronic structure of CeN is studied within the GGA+DMFT approach using SPTF and Hubbard I approximation. • 4f spectral functions from SPTF and Hubbard I are coupled to explain the various spectroscopic manifestations of CeN. • The calculated XPS and BIS spectra show good agreement with the corresponding experimental spectra. • The contribution of the various l-states and the importance of cross-sections for the photoemission process are analyzed. - Abstract: We have studied in detail the electronic structure of CeN including spin orbit coupling (SOC) and electron–electron interaction, within the dynamical mean-field theory combined with density-functional theory in generalized gradient approximation (GGA+DMFT). The effective impurity problem has been solved through the spin-polarized T-matrix fluctuation-exchange (SPTF) solver and the Hubbard I approximation (HIA). The calculated l-projected atomic partial densities of states and the converged potential were used to obtain the X-ray-photoemission-spectra (XPS) and Bremstrahlung Isochromat spectra (BIS). Following the spirit of Gunnarsson–Schonhammer model, we have coupled the SPTF and HIA 4f spectral functions to explain the various spectroscopic manifestations of CeN. Our computed spectra in such a coupled scheme explain the experimental data remarkably well, establishing the validity of our theoretical model in analyzing the electronic structure of CeN. The contribution of the various l-states in the total spectra and the importance of cross sections are also analyzed in detail.

  9. Electronic structure theory of the superheavy elements

    Energy Technology Data Exchange (ETDEWEB)

    Eliav, Ephraim, E-mail: ephraim@tau.ac.il [School of Chemistry, Tel Aviv University, 6997801 Tel Aviv (Israel); Fritzsche, Stephan, E-mail: s.fritzsche@gsi.de [Helmholtz-Institut Jena, Fröbelstieg 3, D-07743 Jena (Germany); Theoretisch-Physikalisches Institut, Friedrich-Schiller-Universität Jena, D-07743 Jena (Germany); Kaldor, Uzi, E-mail: kaldor@tau.ac.il [School of Chemistry, Tel Aviv University, 6997801 Tel Aviv (Israel)

    2015-12-15

    High-accuracy calculations of atomic properties of the superheavy elements (SHE) up to element 122 are reviewed. The properties discussed include ionization potentials, electron affinities and excitation energies, which are associated with the spectroscopic and chemical behavior of these elements, and are therefore of considerable interest. Accurate predictions of these quantities require high-order inclusion of relativity and electron correlation, as well as large, converged basis sets. The Dirac–Coulomb–Breit Hamiltonian, which includes all terms up to second order in the fine-structure constant α, serves as the framework for the treatment; higher-order Lamb shift terms are considered in some selected cases. Electron correlation is treated by either the multiconfiguration self-consistent-field approach or by Fock-space coupled cluster theory. The latter is enhanced by the intermediate Hamiltonian scheme, allowing the use of larger model (P) spaces. The quality of the calculations is assessed by applying the same methods to lighter homologs of the SHEs and comparing with available experimental information. Very good agreement is obtained, within a few hundredths of an eV, and similar accuracy is expected for the SHEs. Many of the properties predicted for the SHEs differ significantly from what may be expected by straightforward extrapolation of lighter homologs, demonstrating that the structure and chemistry of SHEs are strongly affected by relativity. The major scientific challenge of the calculations is to find the electronic structure and basic atomic properties of the SHE and assign its proper place in the periodic table. Significant recent developments include joint experimental–computational studies of the excitation spectrum of Fm and the ionization energy of Lr, with excellent agreement of experiment and theory, auguring well for the future of research in the field.

  10. Tripolar electric field Structure in guide field magnetic reconnection

    OpenAIRE

    S. Fu; S. Huang; M. Zhou; B. Ni; X. Deng

    2018-01-01

    It has been shown that the guide field substantially modifies the structure of the reconnection layer. For instance, the Hall magnetic and electric fields are distorted in guide field reconnection compared to reconnection without guide fields (i.e., anti-parallel reconnection). In this paper, we performed 2.5-D electromagnetic full particle simulation to study the electric field structures in magnetic reconnection under different initial guide fields (Bg). Once the amplit...

  11. Nuclear moments as a probe of electronic structure in material, exotic nuclear structure and fundamental symmetry

    Energy Technology Data Exchange (ETDEWEB)

    Matsuta, K., E-mail: matsuta@vg.phys.sci.osaka-u.ac.jp; Minamisono, T.; Mihara, M.; Fukuda, M. [Osaka Univ., Dept. of Physics (Japan); Zhu, Shengyun [CIAE (China); Masuda, Y. [High Energy Accelerator Research Organization (KEK) (Japan); Hatanaka, K. [Osaka Univ., RCNP (Japan); Yuan Daqing; Zheng Yongnan; Zuo Yi; Fang Ping; Zhou Dongmei [CIAE (China); Ohtsubo, T. [Niigata Univ., Dept. of Physics (Japan); Izumikawa, T. [Niigata Univ., RI Center (Japan); Momota, S. [Kochi Univ. of Technology (Japan); Nishimura, D. [Tokyo Univ. of Science (Japan); Matsumiya, R. [Osaka Univ., RCNP (Japan); Kitagawa, A.; Sato, S.; Kanazawa, M. [Nat. Inst. Radiological Sciences (Japan); Collaboration: Osaka-CIAE-NIRS-Niigata-Kochi-LBL Collaboration; and others

    2013-05-15

    We report our studies in various fields of Physics through nuclear moments utilizing the {beta}-NMR technique, including material sciences, nuclear structures and fundamental symmetries. Especially, we focus on the recent progress in the studies on the electronic structure in Pt through Knight shifts of various impurities, lattice locations of impurities, electric field gradients, the analysis of nuclear spin in terms of its components, anomaly in the spin expectation value for {sup 9}C-{sup 9}Li mirror pair, the G-parity conservation law, and the Ramsey resonance on UCN for future neutron EDM measurements.

  12. Effects of Electric Field on the Valence-Bond Property of an Electron in a Quantum-Dot Molecule

    Institute of Scientific and Technical Information of China (English)

    王立民; 罗莹; 马本堃

    2002-01-01

    The electronic structure of the quantum-dot molecules in an electric field is investigated by the finite element method with the effective mass approximation. The numerical calculation results show that the valence bond of the quantum-dot molecule alternates between covalent bonds and ionic bonds as the electric field increases. The valence-bond property can be reflected by the oscillator strength of the intraband transition. The bound state with the highest energy level in the quantum-dot molecule gradually changes into a quasibound state when the electric field increases.

  13. Spectral-Product Methods for Electronic Structure Calculations (Preprint)

    National Research Council Canada - National Science Library

    Langhoff, P. W; Mills, J. E; Boatz, J. A

    2006-01-01

    .... The spectral-product approach to molecular electronic structure avoids the repeated evaluations of the one- and two-electron integrals required in construction of polyatomic Hamiltonian matrices...

  14. Spectral-Product Methods for Electronic Structure Calculations (Postprint)

    National Research Council Canada - National Science Library

    Langhoff, P. W; Hinde, R. J; Mills, J. D; Boatz, J. A

    2007-01-01

    .... The spectral-product approach to molecular electronic structure avoids the repeated evaluations of the one- and two-electron integrals required in construction of polyatomic Hamiltonian matrices...

  15. Optimal Remanufacturing Certification Contracts in the Electrical and Electronic Industry

    Directory of Open Access Journals (Sweden)

    Huihui Liu

    2017-03-01

    Full Text Available While remanufacturing is highly encouraged worldwide, some original equipment manufacturers (OEMs in the electrical and electronics industry are still not willing to embrace remanufacturing, for fear of expensive investment or the cannibalization of existing products. Meanwhile, third-party remanufacturers’ (TPRs remanufactured products are developing quickly. Due to quality reasons, consumers usually have a higher preference for OEM-certified remanufactured products than uncertified ones. As such, remanufacturing certification has become a strategy that OEMs can use to benefit from product remanufacturing. Our paper focuses on the remanufacturing certification contract between an OEM and a TPR. Once certified, the TPR makes payments to the OEM. These payment terms will affect their enthusiasm for participating in remanufacturing certification. By establishing game models among an OEM, a certified TPR, and an uncertified TPR, our paper explores three certification contracts, namely, the lump-sum payment, profit-sharing payment, and piece-rate payment. We identify the conditions for the OEM and certified TPR to reach a win-win outcome. Our results show that when TPRs have a high profit margin and there is no significant difference in consumers’ preferences between certified and non-certified remanufacturing channels, the profit-sharing payment contract yields the highest profit; otherwise, the piece-rate payment contract is best for the OEM.

  16. Structure of the German electricity industry

    International Nuclear Information System (INIS)

    1992-01-01

    The German integrated association is a union of those electric power supply utilities in the Federal Republic of Germany which cooperate in the integrated operation of 220 kV and 380 kV. The German integrated association (DVG) was founded in 1948. Its main task is to create the technical, operational and legal conditions for the cooperation in the national and international integrated system. The inclusion of the new Federal States has been practiced for the first time with the 320 MW power station in Offleben. (DG) [de

  17. Electronic structure and superconductivity of europium

    International Nuclear Information System (INIS)

    Nixon, Lane W.; Papaconstantopoulos, D.A.

    2010-01-01

    We have calculated the electronic structure of Eu for the bcc, hcp, and fcc crystal structures for volumes near equilibrium up to a calculated 90 GPa pressure using the augmented-plane-wave method in the local-density approximation. The frozen-core approximation was used with a semi-empirical shift of the f-states energies in the radial Schroedinger equation to move the occupied 4f valence states below the Γ 1 energy and into the core. This shift of the highly localized f-states yields the correct europium phase ordering with lattice parameters and bulk moduli in good agreement with experimental data. The calculated superconductivity properties under pressure for the bcc and hcp structures are also found to agree with and follow a T c trend similar to recent measurement by Debessai et al.

  18. Electromagnetic Radiation of Electrons in Periodic Structures

    CERN Document Server

    Potylitsyn, Alexander Petrovich

    2011-01-01

    Periodic magnetic structures (undulators) are widely used in accelerators to generate monochromatic undulator radiation (UR) in the range from far infrared to the hard X-ray region. Another periodic crystalline structure is used to produce quasimonochromatic polarized photon beams via the coherent bremsstrahlung mechanism (CBS). Due to such characteristics as monochromaticity, polarization and adjustability, these types of radiation is of large interest for applied and basic research of accelerator-emitted radiation. The book provides a detailed overview of the fundamental principles behind electromagnetic radiation emitted from accelerated charged particles (e.g. UR, CBS, radiation of fast electrons in Laser flash fields) as well as a unified description of relatively new radiation mechanisms which attracted great interest in recent years. This are the so-called polarization radiation excited by the Coulomb field of incident particles in periodic structures, parametric X-rays, resonant transition radiation a...

  19. Boson structure functions from inelastic electron scattering

    International Nuclear Information System (INIS)

    De Jager, C.W.

    1986-01-01

    The even /sup 104-110/Pd isotopes and /sup 196/Pt have been investigated at NIKHEF-K by high-resolution inelastic electron scattering. A new IBA-2 calculation has been performed for the Pd isotopes, in which the ratio of the proton and neutron coupling constants is taken from pion scattering. One set of boson structure functions sufficed for the description of the first and second E2-excitations in all Pd isotopes. The data showed no sensitivity for different structure functions for proton and neutron bosons. A preliminary analysis of a number of negative parity states (3/sup -/,5/sup -/ and 7/sup -/), observed in /sup 196/Pt, was performed through the introduction of an f-boson. The first E4-excitation in the palladium isotopes can be reasonably described with a β-structure function, but all other E4-excitations require the introduction of g-boson admixtures

  20. Electric Field Structures in Thin Films: Formation and Properties

    DEFF Research Database (Denmark)

    Cassidy, Andrew; Plekan, Oksana; Balog, Richard

    2014-01-01

    A newly discovered class of molecular materials, so-called “spontelectrics”, display spontaneous electric fields. Here we show that the novel properties of spontelectrics can be used to create composite spontelectrics, illustrating how electric fields in solid films may be structured on the nanoscale...... by combining layers of different spontelectric materials. This is demonstrated using the spontelectric materials nitrous oxide, toluene, isoprene, isopentane, and CF2Cl2. These yield a variety of tailored electric field structures, with individual layers harboring fields between 107 and 108 V/m. Fields may...

  1. Photoelectron spectroscopy bulk and surface electronic structures

    CERN Document Server

    Suga, Shigemasa

    2014-01-01

    Photoelectron spectroscopy is now becoming more and more required to investigate electronic structures of various solid materials in the bulk, on surfaces as well as at buried interfaces. The energy resolution was much improved in the last decade down to 1 meV in the low photon energy region. Now this technique is available from a few eV up to 10 keV by use of lasers, electron cyclotron resonance lamps in addition to synchrotron radiation and X-ray tubes. High resolution angle resolved photoelectron spectroscopy (ARPES) is now widely applied to band mapping of materials. It attracts a wide attention from both fundamental science and material engineering. Studies of the dynamics of excited states are feasible by time of flight spectroscopy with fully utilizing the pulse structures of synchrotron radiation as well as lasers including the free electron lasers (FEL). Spin resolved studies also made dramatic progress by using higher efficiency spin detectors and two dimensional spin detectors. Polarization depend...

  2. Electronic Structures of LNA Phosphorothioate Oligonucleotides

    Directory of Open Access Journals (Sweden)

    Henrik G. Bohr

    2017-09-01

    Full Text Available Important oligonucleotides in anti-sense research have been investigated in silico and experimentally. This involves quantum mechanical (QM calculations and chromatography experiments on locked nucleic acid (LNA phosphorothioate (PS oligonucleotides. iso-potential electrostatic surfaces are essential in this study and have been calculated from the wave functions derived from the QM calculations that provide binding information and other properties of these molecules. The QM calculations give details of the electronic structures in terms of e.g., energy and bonding, which make them distinguish or differentiate between the individual PS diastereoisomers determined by the position of sulfur atoms. Rules are derived from the electronic calculations of these molecules and include the effects of the phosphorothioate chirality and formation of electrostatic potential surfaces. Physical and electrochemical descriptors of the PS oligonucleotides are compared to the experiments in which chiral states on these molecules can be distinguished. The calculations demonstrate that electronic structure, electrostatic potential, and topology are highly sensitive to single PS configuration changes and can give a lead to understanding the activity of the molecules. Keywords: LNA phosphorothioate, DNA/LNA oligonucleotide, diastereoisomers, Hartree-Fock calculations, iso-potential surface, anion chromatograms

  3. Extraordinary electronic properties in uncommon structure types

    Science.gov (United States)

    Ali, Mazhar Nawaz

    In this thesis I present the results of explorations into several uncommon structure types. In Chapter 1 I go through the underlying idea of how we search for new compounds with exotic properties in solid state chemistry. The ideas of exploring uncommon structure types, building up from the simple to the complex, using chemical intuition and thinking by analogy are discussed. Also, the history and basic concepts of superconductivity, Dirac semimetals, and magnetoresistance are briefly reviewed. In chapter 2, the 1s-InTaS2 structural family is introduced along with the discovery of a new member of the family, Ag0:79VS2; the synthesis, structure, and physical properties of two different polymorphs of the material are detailed. Also in this chapter, we report the observation of superconductivity in another 1s structure, PbTaSe2. This material is especially interesting due to it being very heavy (resulting in very strong spin orbit coulping (SOC)), layered, and noncentrosymmetric. Electronic structure calculations reveal the presence of a bulk 3D Dirac cone (very similar to graphene) that is gapped by SOC originating from the hexagonal Pb layer. In Chapter 3 we show the re-investigation of the crystal structure of the 3D Dirac semimetal, Cd3As2. It is found to be centrosymmetric, rather than noncentrosymmetric, and as such all bands are spin degenerate and there is a 4-fold degenerate bulk Dirac point at the Fermi level, making Cd3As2 a 3D electronic analog to graphene. Also, for the first time, scanning tunneling microscopy experiments identify a 2x2 surface reconstruction in what we identify as the (112) cleavage plane of single crystals; needle crystals grow with a [110] long axis direction. Lastly, in chapter 4 we report the discovery of "titanic" (sadly dubbed ⪉rge, nonsaturating" by Nature editors and given the acronym XMR) magnetoresistance (MR) in the non-magnetic, noncentrosymmetric, layered transition metal dichalcogenide WTe2; over 13 million% at 0.53 K in

  4. Projected quasiparticle theory for molecular electronic structure

    Science.gov (United States)

    Scuseria, Gustavo E.; Jiménez-Hoyos, Carlos A.; Henderson, Thomas M.; Samanta, Kousik; Ellis, Jason K.

    2011-09-01

    We derive and implement symmetry-projected Hartree-Fock-Bogoliubov (HFB) equations and apply them to the molecular electronic structure problem. All symmetries (particle number, spin, spatial, and complex conjugation) are deliberately broken and restored in a self-consistent variation-after-projection approach. We show that the resulting method yields a comprehensive black-box treatment of static correlations with effective one-electron (mean-field) computational cost. The ensuing wave function is of multireference character and permeates the entire Hilbert space of the problem. The energy expression is different from regular HFB theory but remains a functional of an independent quasiparticle density matrix. All reduced density matrices are expressible as an integration of transition density matrices over a gauge grid. We present several proof-of-principle examples demonstrating the compelling power of projected quasiparticle theory for quantum chemistry.

  5. Studies in the electronic structure of matter

    International Nuclear Information System (INIS)

    Swarts, C.A.

    1979-01-01

    The results of various theories for the angular distribution of electrons photoemitted from the outermost p-shell of rare gas atoms are compared. The theories compared are the local density theories of Slater (X/sub α/) and of Hohenberg, Kohn and Sham, the pseudopotential method, Hartree-Fock theory as evaluated by Kennedy and Manson, and Amusia's random phase approximation with exchange (RPAE). Extended Huekel theory is applied to GaAs, GaP, and to the nitrogen isoelectronic trap in GaAs and GaP. The computer perfect crystal band structures are found to be in reasonable agreement with those computed with empirical pseudopotentials. Nitrogen impurity levels in GaAs and GaP are calculated using a cluster model. By means of model calculations for an independent electron metal, exact lineshapes are obtained for the photon absorption, emission and photoemission spectra of deep core states. 97 references

  6. 76 FR 65710 - Decision and Order Amending Waivers Granted to Mitsubishi Electric & Electronics USA, Inc. From...

    Science.gov (United States)

    2011-10-24

    ... DEPARTMENT OF ENERGY Office of Energy Efficiency and Renewable Energy [Case No. CAC-037] Decision and Order Amending Waivers Granted to Mitsubishi Electric & Electronics USA, Inc. From the Department... Efficiency and Renewable Energy. Decision and Order In the Matter of: Mitsubishi Electric & Electronics USA...

  7. Evaluation and development of a policy for waste generation control - electric and electronic waste management

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Kwang Im [Korea Environment Institute, Seoul (Korea)

    1998-12-01

    Although a policy to reduce waste amount and promote recycling for large electric appliances was introduced, it is still in the initial stage operated in a form of recommendation and the general management system of electric and electronic waste has not established yet. In this study, the generation and disposal of electric and electronic waste were examined and the effectiveness of present policy was evaluated. Based on the analysis, a policy for the more appropriate electric and electronic waste management was presented. 34 refs., 4 figs., 51 tabs.

  8. 77 FR 4623 - Wheego Electric Cars, Inc. Receipt of Petition for Temporary Exemption From the Electronic...

    Science.gov (United States)

    2012-01-30

    ...-0013] Wheego Electric Cars, Inc. Receipt of Petition for Temporary Exemption From the Electronic.... SUMMARY: In accordance with the procedures in 49 CFR part 555, Wheego Electric Cars, Inc., has petitioned... Electric Cars, Inc. (Wheego) submitted a petition dated August 15, 2011 asking the agency for a temporary...

  9. 77 FR 47915 - Wheego Electric Cars, Inc.; Grant of Petition for Temporary Exemption From the Electronic...

    Science.gov (United States)

    2012-08-10

    ...-0013] Wheego Electric Cars, Inc.; Grant of Petition for Temporary Exemption From the Electronic.... SUMMARY: This notice grants the petition of Wheego Electric Cars, Inc. (Wheego) for the temporary... procedures in 49 CFR part 555, Wheego Electric Cars, Inc. (Wheego) submitted a petition dated August 15, 2011...

  10. Communication: Theoretical study of ThO for the electron electric dipole moment search

    Energy Technology Data Exchange (ETDEWEB)

    Skripnikov, L. V., E-mail: leonidos239@gmail.com; Petrov, A. N.; Titov, A. V. [Federal State Budgetary Institute “Petersburg Nuclear Physics Institute,” Gatchina, Leningrad district 188300 (Russian Federation); Department of Physics, Saint Petersburg State University, Saint Petersburg, Petrodvoretz 198904 (Russian Federation)

    2013-12-14

    An experiment to search for the electron electric dipole moment (eEDM) on the metastable H{sup 3}Δ{sub 1} state of ThO molecule was proposed and now prepared by the ACME Collaboration [ http://www.electronedm.org ]. To interpret the experiment in terms of eEDM and dimensionless constant k{sub T,} {sub P} characterizing the strength of the T,P-odd pseudoscalar–scalar electron–nucleus neutral current interaction, an accurate theoretical study of an effective electric field on electron, E{sub eff}, and a parameter of the T,P-odd pseudoscalar–scalar interaction, W{sub T,} {sub P}, in ThO is required. We report our results for E{sub eff} (84 GV/cm) and W{sub T,} {sub P} (116 kHz) together with the hyperfine structure constant, molecule frame dipole moment, and H{sup 3}Δ{sub 1} → X{sup 1}Σ{sup +} transition energy, which can serve as a measure of reliability of the obtained E{sub eff} and W{sub T,} {sub P} values. Besides, our results include a parity assignment and evaluation of the electric-field dependence for the magnetic g factors in the Ω-doublets of H{sup 3}Δ{sub 1}.

  11. Communication: Theoretical study of ThO for the electron electric dipole moment search

    International Nuclear Information System (INIS)

    Skripnikov, L. V.; Petrov, A. N.; Titov, A. V.

    2013-01-01

    An experiment to search for the electron electric dipole moment (eEDM) on the metastable H 3 Δ 1 state of ThO molecule was proposed and now prepared by the ACME Collaboration [ http://www.electronedm.org ]. To interpret the experiment in terms of eEDM and dimensionless constant k T, P characterizing the strength of the T,P-odd pseudoscalar–scalar electron–nucleus neutral current interaction, an accurate theoretical study of an effective electric field on electron, E eff , and a parameter of the T,P-odd pseudoscalar–scalar interaction, W T, P , in ThO is required. We report our results for E eff (84 GV/cm) and W T, P (116 kHz) together with the hyperfine structure constant, molecule frame dipole moment, and H 3 Δ 1 → X 1 Σ + transition energy, which can serve as a measure of reliability of the obtained E eff and W T, P values. Besides, our results include a parity assignment and evaluation of the electric-field dependence for the magnetic g factors in the Ω-doublets of H 3 Δ 1

  12. Implanted ZnO thin films: Microstructure, electrical and electronic properties

    International Nuclear Information System (INIS)

    Lee, J.; Metson, J.; Evans, P.J.; Kinsey, R.; Bhattacharyya, D.

    2007-01-01

    Magnetron sputtered polycrystalline ZnO thin films were implanted using Al, Ag, Sn, Sb and codoped with TiN in order to improve the conductivity and to attempt to achieve p-type behaviour. Structural and electrical properties of the implanted ZnO thin films were examined with X-ray diffractometry (XRD), scanning electron microscopy (SEM), secondary ion mass spectrometry (SIMS), atomic force microscopy (AFM) and conductivity measurements. Depth profiles of the implanted elements varied with the implant species. Implantation causes a partial amorphisation of the crystalline structure and decreases the effective grain size of the films. One of the findings is the improvement, as a consequence of implantation, in the conductivity of initially poorly conductive samples. Heavy doping may help for the conversion of conduction type of ZnO thin films. Annealing in vacuum mitigated structural damage and stress caused by implantation, and improved the conductivity of the implanted ZnO thin films

  13. Studies in the electronic structure of matter

    International Nuclear Information System (INIS)

    Miller, D.L.

    1979-01-01

    KLL Auger transition rates for helium are computed using simple atomic orbital wavefunctions which take into account the difference in average electron--electron repulsion of initial and final states. The results are consistent with transition rates computed by other authors using a variety of many-electron techniques. It is suggested that wavefunctions determined in the manner described provide a useful representation of the autoionizing state within the first Bohr radius. A method for extracting atomic pseudopotentials from photoelectron angular distributions is described and applied photoionization of the outermost p shells of Ar, Kr, and Xe and to the 4d shell of Xe. The pseudopotentials obtained reproduce the data, and also predict accurate cross sections and phase shifts for photoelectron energies up to 100 eV. It is suggested that the pseudopotentials aptly mimic the effects of intrashell electron--electron correlations in the photoionization process. The extended Hueckel theory is applied to the nitrogen trap in GaAs and GaP. Perfect crystal band structures are computed and are shown to be in reasonable agreement with those computed with empirical pseudopotentials. Nitrogen impurity levels in GaAs and GaP are computed using an extended Hueckel cluster model. In each case the model predicts two states within the band gap, in contrast to experiment which detects one impurity state in GaP and none in GaAs. It is suggested that the choice of cluster used unrealistically concentrates states near the conduction band edge on the central atom

  14. Studies in the electronic structure of matter

    International Nuclear Information System (INIS)

    Miller, D.L.

    1979-01-01

    KLL Auger transition rates for helium are computed using simple atomic orbital wavefunctions which take into account the difference in average electron-electron repulsion of initial and final states. The results are consistent with transition rates computed by other authors using a variety of many-electron techniques. It is suggested that wavefunctions determined in the manner described provide a useful representation of the autoionizing state within the first Bohr radius. A method for extracting atomic psuedopotentials from photoelectron angular distributions is described and applied photoionization of the outermost p shells of Ar, Kr, and Xe and to the 4d shell of Xe. The pseudopotentials obtained reproduce the data, and also predict accurate cross sections and phase shifts for photoelectron energies up to 100 eV. It is suggested that the pseudopotentials aptly mimic the effects of intrashell electron-electron correlations in the photoionization process. The extended Hueckel theory is applied to the nitrogen trap in GaAs and GaP. Perfect crystal band structures are computed and are shown to be in reasonable agreement with those computed with empirical psuedopotentials. Nitrogen impurity levles in GaAs and GaP are computed using an extended Hueckel cluster model. In each case the model predicts two states within the band gap, in contrast to experiment which detects one impurity state in GaP and none in GaAs. It is suggested that the choice of cluster used unrealistically concentrates states near the conduction band edge on the central atom

  15. Electron cyclotron waves in the presence of parallel electric fields in the Earth's auroral plasma

    Directory of Open Access Journals (Sweden)

    S. Kumar

    1997-01-01

    Full Text Available The electron cyclotron waves that originate at low altitudes (<0.5 RE and observed by ground facilities have been studied in the presence of a weak parallel electric field in auroral magnetoplasma consisting of trapped energetic auroral electrons and cold background electrons of ionospheric origin. The model distribution for auroral trapped electrons is taken as Maxwellian ring distribution. An expression for the growth rate has been obtained in the presence of parallel electric field assuming that the real frequency in the whistler mode is not affected by the presence of the electric field. The results show that waves grow (or damp in amplitude for a parallel (or antiparallel electric field. The influence of the electric field is more pronounced at a shorter wavelength spectrum. An increase in population of energetic electrons increases the growth rate and thus, plays a significant role in the wave excitation process in the auroral regions.

  16. Electronic structure of defects in semiconductor heterojunctions

    International Nuclear Information System (INIS)

    Haussy, Bernard; Ganghoffer, Jean Francois

    2002-01-01

    Full text.heterojunctions and semiconductors and superlattices are well known and well used by people interested in optoelectronics communications. Components based on the use of heterojunctions are interesting for confinement of light and increase of quantum efficiency. An heterojunction is the contact zone between two different semiconductors, for example GaAs and Ga 1-x Al x As. Superlattices are a succession of heterojunctions (up to 10 or 20). These systems have been the subjects of many experiments ao analyse the contact between semiconductors. They also have been theoretically studied by different types of approach. The main result of those studies is the prediciton of band discontinuities. Defects in heterojunctions are real traps for charge carriers; they can affect the efficiency of the component decreasing the currents and the fluxes in it. the knowledge of their electronic structure is important, a great density of defects deeply modifies the electronic structure of the whole material creating real new bands of energy in the band structure of the component. in the first part of this work, we will describe the heterostructure and the defect in terms of quantum wells and discrete levels. This approach allows us to show the role of the width of the quantum well describing the structure but induces specific behaviours due to the one dimensional modelling. Then a perturbative treatment is proposed using the Green's functions formalism. We build atomic chains with different types of atoms featuring the heterostructure and the defect. Densities of states of a structure with a defect and levels associated to the defect are obtained. Results are comparable with the free electrons work, but the modelling do not induce problems due to a one dimensional approach. To extend our modelling, a three dimensions approach, based on a cavity model, is investigated. The influence of the defect, - of hydrogenoid type - introduced in the structure, is described by a cavity

  17. Formation of positive radial electric field by electron cyclotron heating in compact helical system

    International Nuclear Information System (INIS)

    Idei, H.; Ida, K.; Sanuki, H.

    1994-07-01

    The radial electric field is driven to positive value by off-axis second harmonic electron cyclotron heating (ECH) in the Compact Helical System. The observed positive electric field is associated with the outward particle flux enhanced with ECH. The enhanced particle flux triggered by the production of the electrons accelerated perpendicularly to the magnetic field with ECH results in the change of the electric field. (author)

  18. Atomic Reference Data for Electronic Structure Calculations

    CERN Document Server

    Kotochigova, S; Shirley, E L

    We have generated data for atomic electronic structure calculations, to provide a standard reference for results of specified accuracy under commonly used approximations. Results are presented here for total energies and orbital energy eigenvalues for all atoms from H to U, at microHartree accuracy in the total energy, as computed in the local-density approximation (LDA) the local-spin-density approximation (LSD); the relativistic local-density approximation (RLDA); and scalar-relativistic local-density approximation (ScRLDA).

  19. The electronic structure of impurities in semiconductors

    CERN Multimedia

    Nylandsted larsen, A; Svane, A

    2002-01-01

    The electronic structure of isolated substitutional or interstitial impurities in group IV, IV-IV, and III-V compound semiconductors will be studied. Mössbauer spectroscopy will be used to investigate the incorporation of the implanted isotopes on the proper lattice sites. The data can be directly compared to theoretical calculations using the LMTO scheme. Deep level transient spectroscopy will be used to identify the band gap levels introduced by metallic impurities, mainly in Si~and~Si$ _{x}$Ge$_{1-x}$. \\\\ \\\\

  20. Unoccupied surface electronic structure of Gd(0001)

    International Nuclear Information System (INIS)

    Li, D.; Dowben, P.A.; Ortega, J.E.; Himpsel, F.J.

    1994-01-01

    The unoccupied surface electronic structure of Gd(0001) was investigated with high-resolution inverse-photoemission spectroscopy. An empty surface state near E F is observed at bar Γ. Two other surface-sensitive features are also revealed at 1.2 and 3.1 eV above the Fermi level. Hydrogen adsorption on Gd surfaces was used to distinguish the surface-sensitive features from the bulk features. The unoccupied bulk-band critical points are determined to be Γ 3 + at 1.9 eV and A 1 at 0.8 eV

  1. Cobalamins uncovered by modern electronic structure calculations

    DEFF Research Database (Denmark)

    Kepp, Kasper Planeta; Ryde, Ulf

    2009-01-01

    electronic-structure calculations, in particular density functional methods, the understanding of the molecular mechanism of cobalamins has changed dramatically, going from a dominating view of trans-steric strain effects to a much more complex view involving an arsenal of catalytic strategies. Among...... these are cis-steric distortions, electrostatic stabilization of radical products, the realization that nucleotide units can serve as polar handles, and the careful design of the active sites, with polar residues in the radical enzymes and non-polar residues in the transferases. Together, these strategies...

  2. Electronic golden structure of the periodic chart

    Energy Technology Data Exchange (ETDEWEB)

    Malinowski, Leonard J. [Interdisciplinary Research Club, Monroeville, PA (United States)], E-mail: LJMalinowski@gmail.com

    2009-11-15

    The golden ratio has been studied since the ancient Greeks due to its inherent symmetry and aesthetic beauty, especially in the five Platonic Solids. The golden mean is now established as a pillar of El Naschie's E infinity where it achieves the physical manifestation of 0.618 034 MeV. The largest atomic electron orbital total energies average to the golden mean energy. This paper examines the golden ratio in order to expand upon a century old attempt to produce a relatively static, visual, geometric model of atomic structure.

  3. Electronic golden structure of the periodic chart

    International Nuclear Information System (INIS)

    Malinowski, Leonard J.

    2009-01-01

    The golden ratio has been studied since the ancient Greeks due to its inherent symmetry and aesthetic beauty, especially in the five Platonic Solids. The golden mean is now established as a pillar of El Naschie's E infinity where it achieves the physical manifestation of 0.618 034 MeV. The largest atomic electron orbital total energies average to the golden mean energy. This paper examines the golden ratio in order to expand upon a century old attempt to produce a relatively static, visual, geometric model of atomic structure.

  4. Electronic structure of A15 compounds

    International Nuclear Information System (INIS)

    Pickett, W.E.

    1980-01-01

    For the past twenty-five years compounds with the A15 crystal structure have dominated the class of high temperature superconductors. The crystal structure of an A15 compound A 3 B is cubic (space group O/sub h/ 3 ). However, the site symmetry (D/sub 2d/) of the A atoms is much lower than cubic, an unusual occurrence in cubic binary compounds. Variations on this theme have supplied the basis of many theoretical models of the anomalous temperature (T) dependence of normal state properties and the low temperature cubic reversible tetragonal structural transformations which accompany high values of T/sub c/ in A15 compounds. In this paper results of self-consistent pseudopotential band structure calculations are used to assess some important aspects of the unique and unusual behavior in A15 compounds: (1) the role of the B atom in determining the overall electronic structure will be shown to be important; (2) the effect of the low site symmetry of the A atom on the charge density and potential will be assessed; and (3) the bonding will be shown to be metallic-covalent with no significant A-B charge transfer

  5. Electron mobility variance in the presence of an electric field: Electron-phonon field-induced tunnel scattering

    International Nuclear Information System (INIS)

    Melkonyan, S.V.

    2012-01-01

    The problem of electron mobility variance is discussed. It is established that in equilibrium semiconductors the mobility variance is infinite. It is revealed that the cause of the mobility variance infinity is the threshold of phonon emission. The electron-phonon interaction theory in the presence of an electric field is developed. A new mechanism of electron scattering, called electron-phonon field-induced tunnel (FIT) scattering, is observed. The effect of the electron-phonon FIT scattering is explained in terms of penetration of the electron wave function into the semiconductor band gap in the presence of an electric field. New and more general expressions for the electron-non-polar optical phonon scattering probability and relaxation time are obtained. The results show that FIT transitions have principle meaning for the mobility fluctuation theory: mobility variance becomes finite.

  6. Theoretical study of the influence of the electric field on the electronic properties of armchair boron nitride nanoribbon

    Science.gov (United States)

    Chegel, Raad; Behzad, Somayeh

    2014-11-01

    We have investigated the electronic properties of A-BNNRs in the external electric field using third nearest neighbor tight binding approximation including edge effects. We found that the dependence of on-site energy to the external electric field for edge atoms and center part atoms is different. By comparing the band structure in the different fields, several differences are clearly seen such as modification of energy dispersions, creation of additional band edge states and band gap reduction. By increasing the electric field the band gap reduces linearly until reaches zero and BNNRs with larger width are more sensitive than small ones. All changes in the band structure are directly reflected in the DOS spectrum. The numbers and the energies of the DOS peaks are dependent on the electric field strength.

  7. Electronic structure and mechanical properties of plasma nitrided ferrous alloys

    Energy Technology Data Exchange (ETDEWEB)

    Portolan, E. [Centro de Ciencias Exatas e Tecnologia, Universidade de Caxias do Sul, 95070-560 Caxias do Sul-RS (Brazil); Baumvol, I.J.R. [Centro de Ciencias Exatas e Tecnologia, Universidade de Caxias do Sul, 95070-560 Caxias do Sul-RS (Brazil); Instituto de Fisica, Universidade Federal do Rio Grande do Sul, Porto Alegre 91509-970 (Brazil); Figueroa, C.A., E-mail: cafiguer@ucs.br [Centro de Ciencias Exatas e Tecnologia, Universidade de Caxias do Sul, 95070-560 Caxias do Sul-RS (Brazil)

    2009-04-15

    The electronic structures of the near-surface regions of two different nitrided steels (AISI 316 and 4140) were investigated using X-ray photoelectron spectroscopy. Photoelectron groups from all main chemical elements involved were addressed for steel samples with implanted-N concentrations in the range 16-32 at.%. As the implanted-N concentrations were increased, rather contrasting behaviors were observed for the two kinds of steel. The N1s photoelectrons had spectral shifts toward lower (nitrided AISI 316) or higher (nitrided AISI 4140) binding energies, whereas the Fe2p{sub 3/2} photoelectron spectrum remains at a constant binding energy (nitrided AISI 316) or shifts toward higher binding energies (AISI 4140). These trends are discussed in terms of the metallic nitride formation and the overlapping of atomic orbitals. For nitrided AISI 316, a semi-classical approach of charge transfer between Cr and N is used to explain the experimental facts (formation of CrN), while for nitrided AISI 4140 we propose that the interaction between orbitals 4s from Fe and 2p from N promotes electrons to the conduction band increasing the electrical attraction of the N1s and Fe2p electrons in core shells (formation of FeN{sub x}). The increase in hardness of the steel upon N implantation is attributed to the localization of electrons in specific bonds, which diminishes the metallic bond character.

  8. Electronic structure and mechanical properties of plasma nitrided ferrous alloys

    Science.gov (United States)

    Portolan, E.; Baumvol, I. J. R.; Figueroa, C. A.

    2009-04-01

    The electronic structures of the near-surface regions of two different nitrided steels (AISI 316 and 4140) were investigated using X-ray photoelectron spectroscopy. Photoelectron groups from all main chemical elements involved were addressed for steel samples with implanted-N concentrations in the range 16-32 at.%. As the implanted-N concentrations were increased, rather contrasting behaviors were observed for the two kinds of steel. The N1s photoelectrons had spectral shifts toward lower (nitrided AISI 316) or higher (nitrided AISI 4140) binding energies, whereas the Fe2p 3/2 photoelectron spectrum remains at a constant binding energy (nitrided AISI 316) or shifts toward higher binding energies (AISI 4140). These trends are discussed in terms of the metallic nitride formation and the overlapping of atomic orbitals. For nitrided AISI 316, a semi-classical approach of charge transfer between Cr and N is used to explain the experimental facts (formation of CrN), while for nitrided AISI 4140 we propose that the interaction between orbitals 4s from Fe and 2p from N promotes electrons to the conduction band increasing the electrical attraction of the N1s and Fe2p electrons in core shells (formation of FeN x). The increase in hardness of the steel upon N implantation is attributed to the localization of electrons in specific bonds, which diminishes the metallic bond character.

  9. Electronic structure and mechanical properties of plasma nitrided ferrous alloys

    International Nuclear Information System (INIS)

    Portolan, E.; Baumvol, I.J.R.; Figueroa, C.A.

    2009-01-01

    The electronic structures of the near-surface regions of two different nitrided steels (AISI 316 and 4140) were investigated using X-ray photoelectron spectroscopy. Photoelectron groups from all main chemical elements involved were addressed for steel samples with implanted-N concentrations in the range 16-32 at.%. As the implanted-N concentrations were increased, rather contrasting behaviors were observed for the two kinds of steel. The N1s photoelectrons had spectral shifts toward lower (nitrided AISI 316) or higher (nitrided AISI 4140) binding energies, whereas the Fe2p 3/2 photoelectron spectrum remains at a constant binding energy (nitrided AISI 316) or shifts toward higher binding energies (AISI 4140). These trends are discussed in terms of the metallic nitride formation and the overlapping of atomic orbitals. For nitrided AISI 316, a semi-classical approach of charge transfer between Cr and N is used to explain the experimental facts (formation of CrN), while for nitrided AISI 4140 we propose that the interaction between orbitals 4s from Fe and 2p from N promotes electrons to the conduction band increasing the electrical attraction of the N1s and Fe2p electrons in core shells (formation of FeN x ). The increase in hardness of the steel upon N implantation is attributed to the localization of electrons in specific bonds, which diminishes the metallic bond character.

  10. Electronic structure of hcp transition metals

    DEFF Research Database (Denmark)

    Jepsen, O.; Andersen, O. Krogh; Mackintosh, A. R.

    1975-01-01

    Using the linear muffin-tin-orbital method described in the previous paper, we have calculated the electronic structures of the hcp transition metals, Zr, Hf, Ru, and Os. We show how the band structures of these metals may be synthesized from the sp and d bands, and illustrate the effects...... of hybridization, relativistic band shifts, and spin-orbit coupling by the example of Os. By making use of parameters derived from the muffin-tin potential, we discuss trends in the positions and widths of the energy bands, especially the d bands, as a function of the location in the periodic table. The densities...... of states of the four metals are presented, and the calculated heat capacities compared with experiment. The Fermi surfaces of both Ru and Os are found to be in excellent quantitative agreement with de Haas-van Alphen measurements, indicating that the calculated d-band position is misplaced by less than 10...

  11. Electron-Poor Polar Intermetallics: Complex Structures, Novel Clusters, and Intriguing Bonding with Pronounced Electron Delocalization.

    Science.gov (United States)

    Lin, Qisheng; Miller, Gordon J

    2018-01-16

    Intermetallic compounds represent an extensive pool of candidates for energy related applications stemming from magnetic, electric, optic, caloric, and catalytic properties. The discovery of novel intermetallic compounds can enhance understanding of the chemical principles that govern structural stability and chemical bonding as well as finding new applications. Valence electron-poor polar intermetallics with valence electron concentrations (VECs) between 2.0 and 3.0 e - /atom show a plethora of unprecedented and fascinating structural motifs and bonding features. Therefore, establishing simple structure-bonding-property relationships is especially challenging for this compound class because commonly accepted valence electron counting rules are inappropriate. During our efforts to find quasicrystals and crystalline approximants by valence electron tuning near 2.0 e - /atom, we observed that compositions close to those of quasicrystals are exceptional sources for unprecedented valence electron-poor polar intermetallics, e.g., Ca 4 Au 10 In 3 containing (Au 10 In 3 ) wavy layers, Li 14.7 Mg 36.8 Cu 21.5 Ga 66 adopting a type IV clathrate framework, and Sc 4 Mg x Cu 15-x Ga 7.5 that is incommensurately modulated. In particular, exploratory syntheses of AAu 3 T (A = Ca, Sr, Ba and T = Ge, Sn) phases led to interesting bonding features for Au, such as columns, layers, and lonsdaleite-type tetrahedral frameworks. Overall, the breadth of Au-rich polar intermetallics originates, in part, from significant relativistics effect on the valence electrons of Au, effects which result in greater 6s/5d orbital mixing, a small effective metallic radius, and an enhanced Mulliken electronegativity, all leading to ultimate enhanced binding with nearly all metals including itself. Two other successful strategies to mine electron-poor polar intermetallics include lithiation and "cation-rich" phases. Along these lines, we have studied lithiated Zn-rich compounds in which structural

  12. Experimental Benchmarking of Pu Electronic Structure

    International Nuclear Information System (INIS)

    Tobin, J.G.; Moore, K.T.; Chung, B.W.; Wall, M.A.; Schwartz, A.J.; Ebbinghaus, B.B.; Butterfield, M.T.; Teslich, N.E. Jr.; Bliss, R.A.; Morton, S.A.; Yu, S.W.; Komesu, T.; Waddill, G.D.; van der Laan, G.; Kutepov, A.L.

    2008-01-01

    The standard method to determine the band structure of a condensed phase material is to (1) obtain a single crystal with a well defined surface and (2) map the bands with angle resolved photoelectron spectroscopy (occupied or valence bands) and inverse photoelectron spectroscopy (unoccupied or conduction bands). Unfortunately, in the case of Pu, the single crystals of Pu are either nonexistent, very small and/or having poorly defined surfaces. Furthermore, effects such as electron correlation and a large spin-orbit splitting in the 5f states have further complicated the situation. Thus, we have embarked upon the utilization of unorthodox electron spectroscopies, to circumvent the problems caused by the absence of large single crystals of Pu with well-defined surfaces. Our approach includes the techniques of resonant photoelectron spectroscopy, x-ray absorption spectroscopy, electron energy loss spectroscopy, Fano Effect measurements, and Bremstrahlung Isochromat Spectroscopy, including the utilization of micro-focused beams to probe single-crystallite regions of polycrystalline Pu samples.

  13. Deep learning and the electronic structure problem

    Science.gov (United States)

    Mills, Kyle; Spanner, Michael; Tamblyn, Isaac

    In the past decade, the fields of artificial intelligence and computer vision have progressed remarkably. Supported by the enthusiasm of large tech companies, as well as significant hardware advances and the utilization of graphical processing units to accelerate computations, deep neural networks (DNN) are gaining momentum as a robust choice for many diverse machine learning applications. We have demonstrated the ability of a DNN to solve a quantum mechanical eigenvalue equation directly, without the need to compute a wavefunction, and without knowledge of the underlying physics. We have trained a convolutional neural network to predict the total energy of an electron in a confining, 2-dimensional electrostatic potential. We numerically solved the one-electron Schrödinger equation for millions of electrostatic potentials, and used this as training data for our neural network. Four classes of potentials were assessed: the canonical cases of the harmonic oscillator and infinite well, and two types of randomly generated potentials for which no analytic solution is known. We compare the performance of the neural network and consider how these results could lead to future advances in electronic structure theory.

  14. Structure and navigation for electronic publishing

    Science.gov (United States)

    Tillinghast, John; Beretta, Giordano B.

    1998-01-01

    The sudden explosion of the World Wide Web as a new publication medium has given a dramatic boost to the electronic publishing industry, which previously was a limited market centered around CD-ROMs and on-line databases. While the phenomenon has parallels to the advent of the tabloid press in the middle of last century, the electronic nature of the medium brings with it the typical characteristic of 4th wave media, namely the acceleration in its propagation speed and the volume of information. Consequently, e-publications are even flatter than print media; Shakespeare's Romeo and Juliet share the same computer screen with a home-made plagiarized copy of Deep Throat. The most touted tool for locating useful information on the World Wide Web is the search engine. However, due to the medium's flatness, sought information is drowned in a sea of useless information. A better solution is to build tools that allow authors to structure information so that it can easily be navigated. We experimented with the use of ontologies as a tool to formulate structures for information about a specific topic, so that related concepts are placed in adjacent locations and can easily be navigated using simple and ergonomic user models. We describe our effort in building a World Wide Web based photo album that is shared among a small network of people.

  15. Electronic structure and superconductivity of fcc Cr

    International Nuclear Information System (INIS)

    Xu, J.; Freeman, A.J.; Jarlborg, T.; Brodsky, M.B.

    1984-01-01

    Results of self-consistent electronic structure calculations are reported for metastable fcc Cr metal. Unlike the case of bcc Cr which has E/sub F/ at a minimum in the density of states (DOS), the DOS at E/sub F/ in fcc Cr is at a peak making this one of the higher-DOS metals with the fcc structure (e.g., comparable with that of Ni and Pt). A calculated Stoner factor of 0.82 indicates that ferromagnetic ordering is not expected. Calculations of the electron-phonon coupling parameter lambda and superconducting transition temperature T/sub c/ were made using the rigid-ion approximation and strong-coupling theory with various estimates of the (unknown) phonon contribution. We conclude that T/sub c/'sroughly-equal2.5 K are reasonable, although they are substantially smaller than the T/sub c/roughly-equal10 K derived from measurements on Au-Cr-Au sandwiches

  16. Design and fabrication of a continuous wave electron accelerating structure

    International Nuclear Information System (INIS)

    Takahashi, Jiro

    1997-01-01

    The Physics Institute of Sao Paulo University, SP, Brazil is fabricating a 31 MeV cw racetrack microtron (RTM) designed for nuclear physics research. This is a two-stage microtron that includes a 1.93 MeV injector linac feeding a five-turn microtron booster. After 28 turns, the main microtron delivers a 31 MeV continuous electron beam. The objective of this work is the development and fabrication of an advanced, beta=l, cw accelerating structure for the main microtron. The accelerating structure will be a side-coupled structure (SCS). We have chosen this kind of cavity, because it presents good vacuum properties, allows operation at higher accelerating electric fields and has a shunt impedance better than 81 MQ/m, with a high coupling factor ( 3 - 5%). The engineering design is the Los Alamos one. There will be two tuning plungers placed at both ends of the accelerating structure. They automatically and quickly compensate for the variation in the resonance frequency caused by changes in the structure temperature. Our design represents an advanced accelerating structure with the optimum SCS properties coexisting with the plunger's good tuning properties. (author)

  17. Znx-1CuxMn2O4 spinels; synthesis, structural characterization and electrical evaluation

    International Nuclear Information System (INIS)

    Mendez M, F.; Lima, E.; Bosch, P.; Pfeiffer, H.; Gonzalez, F.

    2010-01-01

    This work presents the structural characterization and electrical evaluation of Zn x-1 Cu x Mn 2 O 4 spinels, which are materials presented as secondary phases into the vari stor ceramic systems. Samples were analyzed by X-ray diffraction, solid-state nuclear magnetic resonance, infrared spectroscopy, scanning electron microscopy and impedance spectroscopy. Although, the addition of copper to the ZnMn 2 O 4 spinel did not produce morphological changes, the structure and electrical behaviors changed considerably. Structurally, copper addition induced the formation of partial inverse spinels, and its addition increases significantly the electrical conductivity. Therefore, the formation of Zn x-1 Cu x Mn 2 O 4 spinels, as secondary phases into the vari stor materials, may compromise significantly the vari stor efficiency. (Author)

  18. In situ transmission electron microscopy study of the microstructural origins for the electric field-induced phenomena in ferroelectric perovskites

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Hanzheng [Iowa State Univ., Ames, IA (United States)

    2014-12-15

    Ferroelectrics are important materials due to their extensive technological applications, such as non-volatile memories, field-effect transistors, ferroelectric tunneling junctions, dielectric capacitors, piezoelectric transducers, sensors and actuators. As is well known, the outstanding dielectric, piezoelectric, and ferroelectric properties of these functional oxides originate from their ferroelectric domain arrangements and the corresponding evolution under external stimuli (e.g. electric field, stress, and temperature). Electric field has been known as the most efficient stimulus to manipulate the ferroelectric domains through polarization switching and alignment. Therefore, direct observation of the dynamic process of electric field-induced domain evolution and crystal structure transformation is of significant importance to understand the microstructural mechanisms for the functional properties of ferroelectrics. In this dissertation, electric field in situ transmission electron microscopy (TEM) technique was employed to monitor the real-time evolution of the domain morphology and crystal structure during various electrical processes: (1) the initial poling process, (2) the electric field reversal process, and (3) the electrical cycling process. Two types of perovskite-structured ceramics, normal ferroelectrics and relaxor ferroelectrics, were used for this investigation. In addition to providing the microscopic insight for some wellaccepted phase transformation rules, discoveries of some new or even unexpected physical phenomena were also demonstrated.

  19. Industrial structure and privatisation of the Slovenian electricity industry

    International Nuclear Information System (INIS)

    Hrovatin, N.

    1999-01-01

    The paper first analyses the existing structure of the Slovenian electricity industry and gives recommendations for its restructuring so as to conform to efficiency criteria and to comply with European Union provisions on the internal European electricity market. Then the paper outlines the necessity for privatisation and draws some conclusions on it such as determination of market values companies, the proportion for sale, privatisation methods and the general public's participation [it

  20. Electronic structure of Ca, Sr, and Ba under pressure.

    Science.gov (United States)

    Animalu, A. O. E.; Heine, V.; Vasvari, B.

    1967-01-01

    Electronic band structure calculations phase of Ca, Sr and Ba over wide range of atomic volumes under pressure electronic band structure calculations for fcc phase of Ca, Sr and Ba over wide range of atomic volumes under pressure electronic band structure calculations for fcc phase of Ca, Sr and Ba over wide range of atomic volumes under pressure

  1. HIL Simulation of Power Electronics and Electric Drives for Automotive Applications

    Directory of Open Access Journals (Sweden)

    Frank Puschmann

    2012-12-01

    Full Text Available Hardware-in-the-loop simulation is today a standard method for testing electronic equipment in the automotive industry. Since electric drives and power electronic devices are more and more important in automotive applications, these kinds of systems have to be integrated into the hardware-in-the-loop simulation. Power converters and electric drives are used in many different applications in vehicles today (hybrid electric or electric powertrain, electric steering systems, DC-DC converters, etc.. The wide range of applications, topologies, and power levels results in various different approaches and solutions for hardware-in-the-loop testing. This paper gives an overview of hardware-in-the-loop simulation of power electronics and electric drives in the automotive industry. The currently available technologies are described and future challenges are outlined.

  2. Correlation between morphology, electron band structure, and resistivity of Pb atomic chains on the Si(5 5 3)-Au surface

    International Nuclear Information System (INIS)

    Jałochowski, M; Kwapiński, T; Łukasik, P; Nita, P; Kopciuszyński, M

    2016-01-01

    Structural and electron transport properties of multiple Pb atomic chains fabricated on the Si(5 5 3)-Au surface are investigated using scanning tunneling spectroscopy, reflection high electron energy diffraction, angular resolved photoemission electron spectroscopy and in situ electrical resistance. The study shows that Pb atomic chains growth modulates the electron band structure of pristine Si(5 5 3)-Au surface and hence changes its sheet resistivity. Strong correlation between chains morphology, electron band structure and electron transport properties is found. To explain experimental findings a theoretical tight-binding model of multiple atomic chains interacting on effective substrate is proposed. (paper)

  3. Disruption of crystalline structure of Sn3.5Ag induced by electric current

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Han-Chie; Lin, Kwang-Lung, E-mail: matkllin@mail.ncku.edu.tw [Department of Material Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Wu, Albert T. [Department of Chemical and Material Engineering, National Central University, Jhongli 32001, Taiwan (China)

    2016-03-21

    This study presented the disruption of the Sn and Ag{sub 3}Sn lattice structures of Sn3.5Ag solder induced by electric current at 5–7 × 10{sup 3} A/cm{sup 2} with a high resolution transmission electron microscope investigation and electron diffraction analysis. The electric current stressing induced a high degree of strain on the alloy, as estimated from the X-ray diffraction (XRD) peak shift of the current stressed specimen. The XRD peak intensity of the Sn matrix and the Ag{sub 3}Sn intermetallic compound diminished to nearly undetectable after 2 h of current stressing. The electric current stressing gave rise to a high dislocation density of up to 10{sup 17}/m{sup 2}. The grain morphology of the Sn matrix became invisible after prolonged current stressing as a result of the coalescence of dislocations.

  4. Disruption of crystalline structure of Sn3.5Ag induced by electric current

    International Nuclear Information System (INIS)

    Huang, Han-Chie; Lin, Kwang-Lung; Wu, Albert T.

    2016-01-01

    This study presented the disruption of the Sn and Ag_3Sn lattice structures of Sn3.5Ag solder induced by electric current at 5–7 × 10"3 A/cm"2 with a high resolution transmission electron microscope investigation and electron diffraction analysis. The electric current stressing induced a high degree of strain on the alloy, as estimated from the X-ray diffraction (XRD) peak shift of the current stressed specimen. The XRD peak intensity of the Sn matrix and the Ag_3Sn intermetallic compound diminished to nearly undetectable after 2 h of current stressing. The electric current stressing gave rise to a high dislocation density of up to 10"1"7/m"2. The grain morphology of the Sn matrix became invisible after prolonged current stressing as a result of the coalescence of dislocations.

  5. Electron microscopy analyses and electrical properties of the layered Bi{sub 2}WO{sub 6} phase

    Energy Technology Data Exchange (ETDEWEB)

    Taoufyq, A. [Institut Matériaux Microélectronique et Nanosciences de Provence, IM2NP, UMR CNRS 7334, Université du Sud Toulon-Var, BP 20132, 83957, La Garde Cedex (France); Laboratoire Matériaux et Environnement LME, Faculté des Sciences, Université Ibn Zohr, BP 8106, Cité Dakhla, Agadir, Maroc (Morocco); Département d‘Études des Réacteurs, Laboratoire Dosimétrie Capteurs Instrumentation, CEA Cadarache (France); Société CESIGMA—Signals and Systems, 1576 Chemin de La Planquette, F 83 130 LA GARDE (France); Ait Ahsaine, H. [Laboratoire Matériaux et Environnement LME, Faculté des Sciences, Université Ibn Zohr, BP 8106, Cité Dakhla, Agadir, Maroc (Morocco); Patout, L. [Institut Matériaux Microélectronique et Nanosciences de Provence, IM2NP, UMR CNRS 7334, Université du Sud Toulon-Var, BP 20132, 83957, La Garde Cedex (France); Benlhachemi, A.; Ezahri, M. [Laboratoire Matériaux et Environnement LME, Faculté des Sciences, Université Ibn Zohr, BP 8106, Cité Dakhla, Agadir, Maroc (Morocco); and others

    2013-07-15

    The bismuth tungstate Bi{sub 2}WO{sub 6} was synthesized using a classical coprecipitation method followed by a calcination process at different temperatures. The samples were characterized by X-ray diffraction, simultaneous thermogravimetry and differential thermal analysis (TGA/DTA), scanning and transmission electron microscopy (SEM, TEM) analyses. The Rietveld analysis and electron diffraction clearly confirmed the Pca2{sub 1} non centrosymmetric space group previously proposed for this phase. The layers Bi{sub 2}O{sub 2}{sup 2+} and WO{sub 4}{sup 2−} have been directly evidenced from the HRTEM images. The electrical properties of Bi{sub 2}WO{sub 6} compacted pellets systems were determined from electrical impedance spectrometry (EIS) and direct current (DC) analyses, under air and argon, between 350 and 700 °C. The direct current analyses showed that the conduction observed from EIS analyses was mainly ionic in this temperature range, with a small electronic contribution. Electrical change above the transition temperature of 660 °C is observed under air and argon atmospheres. The strong conductivity increase observed under argon is interpreted in terms of formation of additional oxygen vacancies coupled with electron conduction. - Graphical abstract: High resolution transmission electron microscopy: inverse fast Fourier transform giving the layered structure of the Bi{sub 2}WO{sub 6} phase, with a representation of the cell dimensions (b and c vectors). The Bi{sub 2}O{sub 2}{sup 2+} and WO{sub 4}{sup 2−} sandwiches are visible in the IFFT image. - Highlights: • Using transmission electron microscopy, we visualize the layered structure of Bi{sub 2}WO{sub 6}. • Electrical analyses under argon gas show some increase in conductivity. • The phase transition at 660 °C is evidenced from electrical modification.

  6. Increased electric sail thrust through removal of trapped shielding electrons by orbit chaotisation due to spacecraft body

    Directory of Open Access Journals (Sweden)

    P. Janhunen

    2009-08-01

    Full Text Available An electric solar wind sail is a recently introduced propellantless space propulsion method whose technical development has also started. The electric sail consists of a set of long, thin, centrifugally stretched and conducting tethers which are charged positively and kept in a high positive potential of order 20 kV by an onboard electron gun. The positively charged tethers deflect solar wind protons, thus tapping momentum from the solar wind stream and producing thrust. The amount of obtained propulsive thrust depends on how many electrons are trapped by the potential structures of the tethers, because the trapped electrons tend to shield the charged tether and reduce its effect on the solar wind. Here we present physical arguments and test particle calculations indicating that in a realistic three-dimensional electric sail spacecraft there exist a natural mechanism which tends to remove the trapped electrons by chaotising their orbits and causing them to eventually collide with the conducting tethers. We present calculations which indicate that if these mechanisms were able to remove trapped electrons nearly completely, the electric sail performance could be about five times higher than previously estimated, about 500 nN/m, corresponding to 1 N thrust for a baseline construction with 2000 km total tether length.

  7. Preionization electron density measurement by collecting electric charge

    International Nuclear Information System (INIS)

    Giordano, G.; Letardi, T.

    1988-01-01

    A method using electron collection for preionization-electron number density measurements is presented. A cathode-potential drop model is used to describe the measurement principle. There is good agreement between the model and the experimental result

  8. Electronic structure of MnSi : The role of electron-electron interactions

    NARCIS (Netherlands)

    Carbone, F; Zangrando, M; Brinkman, A; Nicolaou, A; Bondino, F; Magnano, E; Nugroho, A. A.; Parmigiani, F; Jarlborg, T; van der Marel, D

    We present an experimental study of the electronic structure of MnSi. Using x-ray absorption spectroscopy (XAS), x-ray photoemission, and x-ray fluorescence, we provide experimental evidence that MnSi has a mixed valence ground state. We show that self-consistent local density approximation

  9. Electronic structure of MnSi: The role of electron-electron interactions

    NARCIS (Netherlands)

    Carbone, F.; Zangrando, M.; Brinkman, Alexander; Nicolaou, A.; Bondino, F.; Magnano, E.; Nugroho, A.A.; Parmigiani, F.; Jarlborg, Th.; van der Marel, D.

    2006-01-01

    We present an experimental study of the electronic structure of MnSi. Using x-ray absorption spectroscopy (XAS), x-ray photoemission, and x-ray fluorescence, we provide experimental evidence that MnSi has a mixed valence ground state. We show that self-consistent local density approximation

  10. Quantum dynamical phenomena of independent electrons in semiconductor superlattices subject to a uniform electric field

    International Nuclear Information System (INIS)

    Bouchard, A.M.

    1994-01-01

    This report discusses the following topics: Bloch oscillations and other dynamical phenomena of electrons in semiconductor superlattices; solvable dynamical model of an electron in a one-dimensional aperiodic lattice subject to a uniform electric field; and quantum dynamical phenomena of electrons in aperiodic semiconductor superlattices

  11. Fingerprint-based structure retrieval using electron density.

    Science.gov (United States)

    Yin, Shuangye; Dokholyan, Nikolay V

    2011-03-01

    We present a computational approach that can quickly search a large protein structural database to identify structures that fit a given electron density, such as determined by cryo-electron microscopy. We use geometric invariants (fingerprints) constructed using 3D Zernike moments to describe the electron density, and reduce the problem of fitting of the structure to the electron density to simple fingerprint comparison. Using this approach, we are able to screen the entire Protein Data Bank and identify structures that fit two experimental electron densities determined by cryo-electron microscopy. Copyright © 2010 Wiley-Liss, Inc.

  12. Electromagnetic radiation of electrons in periodic structures

    International Nuclear Information System (INIS)

    Potylitsyn, Alexander Petrovich

    2011-01-01

    Periodic magnetic structures (undulators) are widely used in accelerators to generate monochromatic undulator radiation (UR) in the range from far infrared to the hard X-ray region. Another periodic crystalline structure is used to produce quasimonochromatic polarized photon beams via the coherent bremsstrahlung mechanism (CBS). Due to such characteristics as monochromaticity, polarization and adjustability, these types of radiation is of large interest for applied and basic research of accelerator-emitted radiation. The book provides a detailed overview of the fundamental principles behind electromagnetic radiation emitted from accelerated charged particles (e.g. UR, CBS, radiation of fast electrons in Laser flash fields) as well as a unified description of relatively new radiation mechanisms which attracted great interest in recent years. This are the so-called polarization radiation excited by the Coulomb field of incident particles in periodic structures, parametric X-rays, resonant transition radiation and the Smith-Purcell effect. Characteristics of such radiation sources and perspectives of their usage are discussed. The recent experimental results as well as their interpretation are presented. (orig.)

  13. Bosch automotive electrics and automotive electronics. Systems and components, networking and hybrid drive. 5. ed.

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2014-07-01

    Complete reference guide to automotive electrics and electronics. The significance of electrical and electronic systems has increased considerably in the last few years and this trend is set to continue. The characteristics feature of innovative systems is the fact that they can work together in a network. This requires powerful bus systems that the electronic control units can use to exchange information. Networking and the various bus systems used in motor vehicles are the prominent new topic in the 5th edition of the ''Automotive Electric, Automotive Electronics'' technical manual. The existing chapters have also been updated, so that this new edition brings the reader up to date on the subjects of electrical and electronic systems in the motor vehicle.

  14. Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Tan Ren-Bing; Qin Hua; Zhang Xiao-Yu; Xu Wen

    2013-01-01

    We present a theoretical study on the electric field driven plasmon dispersion of the two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistors (HEMTs). By introducing a drifted Fermi—Dirac distribution, we calculate the transport properties of the 2DEG in the AlGaN/GaN interface by employing the balance-equation approach based on the Boltzmann equation. Then, the nonequilibrium Fermi—Dirac function is obtained by applying the calculated electron drift velocity and electron temperature. Under random phase approximation (RPA), the electric field driven plasmon dispersion is investigated. The calculated results indicate that the plasmon frequency is dominated by both the electric field E and the angle between wavevector q and electric field E. Importantly, the plasmon frequency could be tuned by the applied source—drain bias voltage besides the gate voltage (change of the electron density)

  15. Structural transformations in amorphous electrical steels

    International Nuclear Information System (INIS)

    D'yakonova, N.B.; Molotilov, B.V.; Vlasova, E.N.; Lyasotskij, I.V.

    2000-01-01

    The sequence of structural reactions at initial sages of crystallization of Fe-B-Si and Fe-B-Si-P amorphous ribbons is studied in the bulk and near the surface. It is shown that partial substitution of boron with phosphorus in Fe-Si-B-P alloys retards the surface crystallization a rising on annealing at temperatures typical for heat treatments applied to enhance magnetic properties. In spite of lower temperature of a bulk crystallization onset in phosphorus bearing alloys the beginning of surface crystallization shifts to high temperatures or to more long-term holding at given temperatures. This fact alloys varying annealing temperature and time in a wide range to attain needed magnetic properties as well as using retarded heating and cooling. It is of special importance when massive magnetic cores are heat treated [ru

  16. New characterisation method of electrical and electronic equipment wastes (WEEE)

    Energy Technology Data Exchange (ETDEWEB)

    Menad, N., E-mail: n.menad@brgm.fr [BRGM, 3 av. C. Guillemin, 45060 Orléans (France); Guignot, S. [BRGM, 3 av. C. Guillemin, 45060 Orléans (France); Houwelingen, J.A. van, E-mail: recy.cling@iae.nl [Recycling Consult, Eindhoven (Netherlands)

    2013-03-15

    Highlights: ► A novel method of characterisation of components contained in WEEE has been developed. ► This technique was applied on several samples generated from different recycling plants. ► Handheld NIR and XRF were used to determine types of plastics and flame retardants. ► WEEE processing flow-sheet was suggested. - Abstract: Innovative separation and beneficiation techniques of various materials encountered in electrical and electronic equipment wastes (WEEE) is a major improvement for its recycling. Mechanical separation-oriented characterisation of WEEE was conducted in an attempt to evaluate the amenability of mechanical separation processes. Properties such as liberation degree of fractions (plastics, metals ferrous and non-ferrous), which are essential for mechanical separation, are analysed by means of a grain counting approach. Two different samples from different recycling industries were characterised in this work. The first sample is a heterogeneous material containing different types of plastics, metals (ferrous and non-ferrous), printed circuit board (PCB), rubber and wood. The second sample contains a mixture of mainly plastics. It is found for the first sample that all aluminium particles are free (100%) in all investigated size fractions. Between 92% and 95% of plastics are present as free particles; however, 67% in average of ferromagnetic particles are liberated. It can be observed that only 42% of ferromagnetic particles are free in the size fraction larger than 20 mm. Particle shapes were also quantified manually particle by particle. The results show that the particle shapes as a result of shredding, turn out to be heterogeneous, thereby complicating mechanical separation processes. In addition, the separability of various materials was ascertained by a sink–float analysis and eddy current separation. The second sample was separated by automatic sensor sorting in four different products: ABS, PC–ABS, PS and rest product. The

  17. On DESTINY Science Instrument Electrical and Electronics Subsystem Framework

    Science.gov (United States)

    Kizhner, Semion; Benford, Dominic J.; Lauer, Tod R.

    2009-01-01

    Future space missions are going to require large focal planes with many sensing arrays and hundreds of millions of pixels all read out at high data rates'' . This will place unique demands on the electrical and electronics (EE) subsystem design and it will be critically important to have high technology readiness level (TRL) EE concepts ready to support such missions. One such omission is the Joint Dark Energy Mission (JDEM) charged with making precise measurements of the expansion rate of the universe to reveal vital clues about the nature of dark energy - a hypothetical form of energy that permeates all of space and tends to increase the rate of the expansion. One of three JDEM concept studies - the Dark Energy Space Telescope (DESTINY) was conducted in 2008 at the NASA's Goddard Space Flight Center (GSFC) in Greenbelt, Maryland. This paper presents the EE subsystem framework, which evolved from the DESTINY science instrument study. It describes the main challenges and implementation concepts related to the design of an EE subsystem featuring multiple focal planes populated with dozens of large arrays and millions of pixels. The focal planes are passively cooled to cryogenic temperatures (below 140 K). The sensor mosaic is controlled by a large number of Readout Integrated Circuits and Application Specific Integrated Circuits - the ROICs/ASICs in near proximity to their sensor focal planes. The ASICs, in turn, are serviced by a set of "warm" EE subsystem boxes performing Field Programmable Gate Array (FPGA) based digital signal processing (DSP) computations of complex algorithms, such as sampling-up-the-ramp algorithm (SUTR), over large volumes of fast data streams. The SUTR boxes are supported by the Instrument Control/Command and Data Handling box (ICDH Primary and Backup boxes) for lossless data compression, command and low volume telemetry handling, power conversion and for communications with the spacecraft. The paper outlines how the JDEM DESTINY concept

  18. New characterisation method of electrical and electronic equipment wastes (WEEE)

    International Nuclear Information System (INIS)

    Menad, N.; Guignot, S.; Houwelingen, J.A. van

    2013-01-01

    Highlights: ► A novel method of characterisation of components contained in WEEE has been developed. ► This technique was applied on several samples generated from different recycling plants. ► Handheld NIR and XRF were used to determine types of plastics and flame retardants. ► WEEE processing flow-sheet was suggested. - Abstract: Innovative separation and beneficiation techniques of various materials encountered in electrical and electronic equipment wastes (WEEE) is a major improvement for its recycling. Mechanical separation-oriented characterisation of WEEE was conducted in an attempt to evaluate the amenability of mechanical separation processes. Properties such as liberation degree of fractions (plastics, metals ferrous and non-ferrous), which are essential for mechanical separation, are analysed by means of a grain counting approach. Two different samples from different recycling industries were characterised in this work. The first sample is a heterogeneous material containing different types of plastics, metals (ferrous and non-ferrous), printed circuit board (PCB), rubber and wood. The second sample contains a mixture of mainly plastics. It is found for the first sample that all aluminium particles are free (100%) in all investigated size fractions. Between 92% and 95% of plastics are present as free particles; however, 67% in average of ferromagnetic particles are liberated. It can be observed that only 42% of ferromagnetic particles are free in the size fraction larger than 20 mm. Particle shapes were also quantified manually particle by particle. The results show that the particle shapes as a result of shredding, turn out to be heterogeneous, thereby complicating mechanical separation processes. In addition, the separability of various materials was ascertained by a sink–float analysis and eddy current separation. The second sample was separated by automatic sensor sorting in four different products: ABS, PC–ABS, PS and rest product. The

  19. Electron Liquids in Semiconductor Quantum Structures

    International Nuclear Information System (INIS)

    Pinczuk, Aron

    2009-01-01

    The groups led by Stormer and Pinczuk have focused this project on goals that seek the elucidation of novel many-particle effects that emerge in two-dimensional electron systems (2DES) as the result from fundamental quantum interactions. This experimental research is conducted under extreme conditions of temperature and magnetic field. From the materials point of view, the ultra-high mobility systems in GaAs/AlGaAs quantum structures continue to be at the forefront of this research. The newcomer materials are based on graphene, a single atomic layer of graphite. The graphene research is attracting enormous attention from many communities involved in condensed matter research. The investigated many-particle phenomena include the integer and fractional quantum Hall effect, composite fermions, and Dirac fermions, and a diverse group of electron solid and liquid crystal phases. The Stormer group performed magneto-transport experiments and far-infrared spectroscopy, while the Pinczuk group explores manifestations of such phases in optical spectra.

  20. Electrons and photons in periodic structures

    DEFF Research Database (Denmark)

    Pedersen, Jesper Goor

    . In particular, the modulation leads to the emergence of band gaps, which are accompanied by a strongly modified density of states near and within the band gap. The main focus is on two applications of such modified densities of states. Firstly, the intentional introduction of defects in an otherwise perfectly...... periodic modulation of an electron gas leads to the emergence of localized defect states with energies within the band gap, where no propagating modes exist. Secondly, the divergence of the photonic density of states near a photonic band gap leads to strongly modified light-matter interactions, which has...... of the density of states near the band gap edge. Using a perturbative approach, we demonstrate certain limits of the attainable slow down factors due to broadening of electromagnetic modes. We discuss the effect of damping due to a finite conductivity as well as structural disorder, and provide a common...

  1. Electronic structure of single crystal C60

    International Nuclear Information System (INIS)

    Wu, J.; Shen, Z.X.; Dessau, D.S.; Cao, R.; Marshall, D.S.; Pianetta, P.; Lindau, I.; Yang, X.; Terry, J.; King, D.M.; Wells, B.O.; Elloway, D.; Wendt, H.R.; Brown, C.A.; Hunziker, H.; Vries, M.S. de

    1992-01-01

    We report angle-resolved photoemission data from single crystals of C 60 cleaved in UHV. Unlike the other forms of pure carbon, the valence band spectrum of C 60 consists of many sharp features that can be essentially accounted for by the quantum chemical calculations describing individual molecules. This suggests that the electronic structure of solid C 60 is mainly determined by the bonding interactions within the individual molecules. We also observe remarkable intensity modulations of the photoemission features as a function of photon energy, suggesting strong final state effects. Finally, we address the issue of the band width of the HOMO state of C 60 . We assert that the width of the photoemission peak of C 60 does not reflect the intrinsic band width because it is broadened by the non 0-0 transitions via the Franck-Condon principle. Our view point provides a possible reconciliation between these photoemission data and those measured by other techniques. (orig.)

  2. Multilevel domain decomposition for electronic structure calculations

    International Nuclear Information System (INIS)

    Barrault, M.; Cances, E.; Hager, W.W.; Le Bris, C.

    2007-01-01

    We introduce a new multilevel domain decomposition method (MDD) for electronic structure calculations within semi-empirical and density functional theory (DFT) frameworks. This method iterates between local fine solvers and global coarse solvers, in the spirit of domain decomposition methods. Using this approach, calculations have been successfully performed on several linear polymer chains containing up to 40,000 atoms and 200,000 atomic orbitals. Both the computational cost and the memory requirement scale linearly with the number of atoms. Additional speed-up can easily be obtained by parallelization. We show that this domain decomposition method outperforms the density matrix minimization (DMM) method for poor initial guesses. Our method provides an efficient preconditioner for DMM and other linear scaling methods, variational in nature, such as the orbital minimization (OM) procedure

  3. Electric field and electron density thresholds for coherent auroral echo onset

    International Nuclear Information System (INIS)

    Kustov, A.V.; Uspensky, M.V.; Sofko, G.J.; Koehler, J.A.; Jones, G.O.L.; Williams, P.J.S.

    1993-01-01

    The authors study the threshold dependence of electron density and electric field for the observation of coherent auroral echo onset. They make use of Polar Geophysical Institute 83 MHz auroral radar and the EISCAT facility in Scandanavia, to simultaneously get plasma parameter information and coherent scatter observations. They observe an electron density threshold of roughly 2.5x10 11 m -3 for electric fields of 15 - 20 mV/m (near the Farley-Buneman instability threshold). For electric fields of 5 - 10 mV/m echos are not observed for even twice the previous electron density. Echo strength is observed to have other parametric dependences

  4. Research on structure and electrical parameters of indium antimonide films

    International Nuclear Information System (INIS)

    Mukhametniyazova, A.; Konyaeva, V.F.; Sukhanov, S.; Ashirov, A.; Aleksanyan, S.N.

    1980-01-01

    Results of investigations into the effect of conditions of formation of indium antimonide films prepared by thermal vacuum spraying on their structure, phase composition and electric parameters, are presented. The method of studying the synthesized semiconductor layers on the DRON-0.5 X-ray device with CoKsub(α)-radiation is tested. The dependence of structure, phase composition and electric properties of InSb layers 1+3 μm thick sprayed on ferrite substrates on condensation temperature, is established. Hexagonal InSb modification is found

  5. Research on structure and electrical parameters of indium antimonide films

    Energy Technology Data Exchange (ETDEWEB)

    Mukhametniyazova, A; Konyaeva, V F; Sukhanov, S; Ashirov, A; Aleksanyan, S N [AN Turkmenskoj SSR, Ashkhabad. Fiziko-Tekhnicheskii Inst.

    1980-01-01

    Results of investigations into the effect of conditions of formation of indium antimonide films prepared by thermal vacuum spraying on their structure, phase composition and electric parameters, are presented. The method of studying the synthesized semiconductor layers on the DRON-0.5 X-ray device with CoKsub(..cap alpha..)-radiation is tested. The dependence of structure, phase composition and electric properties of InSb layers 1+3 ..mu..m thick sprayed on ferrite substrates on condensation temperature, is established. Hexagonal InSb modification is found.

  6. Hyperfine structure in the Gd II spectrum and the nuclear electric quadrupole moment of 157Gd

    International Nuclear Information System (INIS)

    Clieves, H.P.; Steudel, A.

    1979-01-01

    The hyperfine structure of 157 Gd was investigated in 20 Gd II lines by means of a photoelectric recording Fabry-Perot interferometer with digital data processing. The hyperfine splitting factors, A and B, were obtained by computer fits to the observed line structures. Using a multiconfigurational set of wave functions in intermediate coupling derived by Wyart, mono-electronic parameters were deduced by a parametric treatment. The nuclear electric quadrupole moment of 157 Gd was evaluated from the quadrupole interaction of the 5d electron in 4f 7 5d6s, the 5d electron in 4f 7 5d6p, and the 6p electron in 4f 7 5d6p. The three values obtained for the quadrupole moment agree very well. The final result, corrected for Sternheimer shielding, is Q( 157 Gd) = 1.34(7) x 10 -24 cm 2 . (orig.) [de

  7. Electric-field and strain-tunable electronic properties of MoS2/h-BN/graphene vertical heterostructures.

    Science.gov (United States)

    Zan, Wenyan; Geng, Wei; Liu, Huanxiang; Yao, Xiaojun

    2016-01-28

    Vertical heterostructures of MoS2/h-BN/graphene have been successfully fabricated in recent experiments. Using first-principles analysis, we show that the structural and electronic properties of such vertical heterostructures are sensitive to applied vertical electric fields and strain. The applied electric field not only enhances the interlayer coupling but also linearly controls the charge transfer between graphene and MoS2 layers, leading to a tunable doping in graphene and controllable Schottky barrier height. Applied biaxial strain could weaken the interlayer coupling and results in a slight shift of graphene's Dirac point with respect to the Fermi level. It is of practical importance that the tunable electronic properties by strain and electric fields are immune to the presence of sulfur vacancies, the most common defect in MoS2.

  8. Optimising waste from electric and electronic equipment collection systems: a comparison of approaches in European countries.

    Science.gov (United States)

    Friege, Henning; Oberdörfer, Michael; Günther, Marko

    2015-03-01

    The first European waste from electric and electronic equipment directive obliged the Member States to collect 4 kg of used devices per inhabitant and year. The target of the amended directive focuses on the ratio between the amount of waste from electric and electronic equipment collected and the mass of electric and electronic devices put on the market in the three foregoing years. The minimum collection target is 45% starting in 2016, being increased to 65% in 2019 or alternatively 85% of waste from electric and electronic equipment generated. Being aware of the new target, the question arises how Member States with 'best practice' organise their collection systems and how they enforce the parties in this playing field. Therefore the waste from electric and electronic equipment schemes of Sweden, Denmark, Switzerland, Germany and the Flemish region of Belgium were investigated focusing on the categories IT and telecommunications equipment, consumer equipment like audio systems and discharge lamps containing hazardous substances, e.g. mercury. The systems for waste from electric and electronic equipment collection in these countries vary considerably. Recycling yards turned out to be the backbone of waste from electric and electronic equipment collection in most countries studied. For discharge lamps, take-back by retailers seems to be more important. Sampling points like special containers in shopping centres, lidded waste bins and complementary return of used devices in all retail shops for electric equipment may serve as supplements. High transparency of collection and recycling efforts can encourage ambition among the concerned parties. Though the results from the study cannot be transferred in a simplistic manner, they serve as an indication for best practice methods for waste from electric and electronic equipment collection. © The Author(s) 2015.

  9. Electric-field control of electronic transport properties and enhanced magnetoresistance in La0.7Sr0.3MnO3/0.5BaZr0.2Ti0.8O3-0.5Ba0.7Ca0.3TiO3 lead-free multiferroic structures

    Science.gov (United States)

    Yan, Jian-Min; Gao, Guan-Yin; Liu, Yu-Kuai; Wang, Fei-Fei; Zheng, Ren-Kui

    2017-10-01

    We report the fabrication of lead-free multiferroic structures by depositing ferromagnetic La0.7Sr0.3MnO3 (LSMO) polycrystalline films on polished 0.5BaZr0.2Ti0.8O3-0.5Ba0.7Ca0.3TiO3 (BZT-BCT) piezoelectric ceramic substrates. By applying electric fields to the BZT-BCT along the thickness direction, the resistivity of LSMO films can be effectively manipulated via the piezoelectric strain of the BZT-BCT. Moreover, the LSMO polycrystalline films exhibit almost temperature independent and significantly enhanced magnetoresistance (MR) below TC. At T = 2 K and H = 8 T, the MR of polycrystalline films is approximately two orders of magnitude higher than that of LSMO epitaxial films grown on (LaAlO3)0.3(SrAl1/2Ta1/2O3)0.7 single-crystal substrates. The enhanced MR mainly results from the spin-polarized tunneling of charge carriers across grain boundaries. The LSMO/BZT-BCT structures with electric-field controllable modulation of resistivity and enhanced MR effect may have potential applications in low-energy consumption and environmentally friendly electronic devices.

  10. High-sensitivity visualization of localized electric fields using low-energy electron beam deflection

    Science.gov (United States)

    Jeong, Samuel; Ito, Yoshikazu; Edwards, Gary; Fujita, Jun-ichi

    2018-06-01

    The visualization of localized electronic charges on nanocatalysts is expected to yield fundamental information about catalytic reaction mechanisms. We have developed a high-sensitivity detection technique for the visualization of localized charges on a catalyst and their corresponding electric field distribution, using a low-energy beam of 1 to 5 keV electrons and a high-sensitivity scanning transmission electron microscope (STEM) detector. The highest sensitivity for visualizing a localized electric field was ∼0.08 V/µm at a distance of ∼17 µm from a localized charge at 1 keV of the primary electron energy, and a weak local electric field produced by 200 electrons accumulated on the carbon nanotube (CNT) apex can be visualized. We also observed that Au nanoparticles distributed on a CNT forest tended to accumulate a certain amount of charges, about 150 electrons, at a ‑2 V bias.

  11. Characterization of quantum well structures using a photocathode electron microscope

    Science.gov (United States)

    Spencer, Michael G.; Scott, Craig J.

    1989-01-01

    Present day integrated circuits pose a challenge to conventional electronic and mechanical test methods. Feature sizes in the submicron and nanometric regime require radical approaches in order to facilitate electrical contact to circuits and devices being tested. In addition, microwave operating frequencies require careful attention to distributed effects when considering the electrical signal paths within and external to the device under test. An alternative testing approach which combines the best of electrical and optical time domain testing is presented, namely photocathode electron microscope quantitative voltage contrast (PEMQVC).

  12. Characterization of structural and electrical properties of ZnO tetrapods

    Science.gov (United States)

    Gu, Yu-Dong; Mai, Wen-Jie; Jiang, Peng

    2011-12-01

    ZnO tetrapods were synthesized by a typical thermal vapor-solid deposition method in a horizontal tube furnace. Structural characterization was carried out by transmission electron microscopy (TEM) and select-area electron diffraction (SAED), which shows the presence of zinc blende nucleus in the center of tetrapods while the four branches taking hexagonal wurtzite structure. The electrical transport property of ZnO tetrapods was investigated through an in-situ nanoprobe system. The three branches of a tetrapod serve as source, drain, and "gate", respectively; while the fourth branch pointing upward works as the force trigger by vertically applying external force downward. The conductivity of each branch of ZnO-tetrapods increases 3-4 times under pressure. In such situation, the electrical current through the branches of ZnO tetrapods can be tuned by external force, and therefore a simple force sensor based on ZnO tetrapods has been demonstrated for the first time.

  13. Measuring size dependent electrical properties from nanoneedle structures: Pt/ZnO Schottky diodes

    International Nuclear Information System (INIS)

    Mao, Shimin; Anderson, Daniel D.; Shang, Tao; Park, Byoungnam; Dillon, Shen J.

    2014-01-01

    This work reports the fabrication and testing of nanoneedle devices with well-defined interfaces that are amenable to a variety of structural and electrical characterization, including transmission electron microscopy. Single Pt/ZnO nanoneedle Schottky diodes were fabricated by a top down method using a combination of electro-polishing, sputtering, and focused ion beam milling. The resulting structures contained nanoscale planar heterojunctions with low ideality factors, the dimensions of which were tuned to study size-dependent electrical properties. The diameter dependence of the Pt/ZnO diode barrier height is explained by a joule heating effect and/or electronic inhomogeneity in the Pt/ZnO contact area

  14. Two Step Acceleration Process of Electrons in the Outer Van Allen Radiation Belt by Time Domain Electric Field Bursts and Large Amplitude Chorus Waves

    Science.gov (United States)

    Agapitov, O. V.; Mozer, F.; Artemyev, A.; Krasnoselskikh, V.; Lejosne, S.

    2014-12-01

    A huge number of different non-linear structures (double layers, electron holes, non-linear whistlers, etc) have been observed by the electric field experiment on the Van Allen Probes in conjunction with relativistic electron acceleration in the Earth's outer radiation belt. These structures, found as short duration (~0.1 msec) quasi-periodic bursts of electric field in the high time resolution electric field waveform, have been called Time Domain Structures (TDS). They can quite effectively interact with radiation belt electrons. Due to the trapping of electrons into these non-linear structures, they are accelerated up to ~10 keV and their pitch angles are changed, especially for low energies (˜1 keV). Large amplitude electric field perturbations cause non-linear resonant trapping of electrons into the effective potential of the TDS and these electrons are then accelerated in the non-homogeneous magnetic field. These locally accelerated electrons create the "seed population" of several keV electrons that can be accelerated by coherent, large amplitude, upper band whistler waves to MeV energies in this two step acceleration process. All the elements of this chain acceleration mechanism have been observed by the Van Allen Probes.

  15. 76 FR 40714 - Decision and Order Granting a Waiver to Mitsubishi Electric & Electronics USA, Inc. From the...

    Science.gov (United States)

    2011-07-11

    ... and Order Granting a Waiver to Mitsubishi Electric & Electronics USA, Inc. From the Department of... Mitsubishi Electric & Electronics USA, Inc. (Mitsubishi) a waiver from the existing DOE test procedures... Matter of: Mitsubishi Electric & Electronics USA, Inc. (Mitsubishi) (Case No. CAC-030). Background Title...

  16. In situ electron holography of electric potentials inside a solid-state electrolyte: Effect of electric-field leakage

    Energy Technology Data Exchange (ETDEWEB)

    Aizawa, Yuka; Yamamoto, Kazuo; Sato, Takeshi [Nanostructures Research Laboratory, Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta-ku, Nagoya, Aichi 456-8587 (Japan); Murata, Hidekazu [Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, Aichi 468-8502 (Japan); Yoshida, Ryuji; Fisher, Craig A.J. [Nanostructures Research Laboratory, Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta-ku, Nagoya, Aichi 456-8587 (Japan); Kato, Takehisa; Iriyama, Yasutoshi [Department of Materials, Physics and Energy Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8601 (Japan); Hirayama, Tsukasa, E-mail: t-hirayama@jfcc.or.jp [Nanostructures Research Laboratory, Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta-ku, Nagoya, Aichi 456-8587 (Japan)

    2017-07-15

    In situ electron holography is used to observe changes of electric-potential distributions in an amorphous lithium phosphorus oxynitride (LiPON) solid-state electrolyte when different voltages are applied. 2D phase images are simulated by integrating the 3D potential distribution along the electron trajectory through a thin Cu/LiPON/Cu region. Good agreement between experimental and simulated phase distributions is obtained when the influence of the external electric field is taken into account using the 3D boundary-charge method. Based on the precise potential changes, the lithium-ion and lithium-vacancy distributions inside the LiPON layer and electric double layers (EDLs) are inferred. The gradients of the phase drops at the interfaces in relation to EDL widths are discussed. - Highlights: • Solid-state electrolyte LiPON has been observed by in situ electron holography. • Observed phase distributions are compared with those simulated numerically. • 3D electric fields around the specimen are taken into account in the simulation. • Electric-potential distributions inside LiPON have been obtained. • The lithium-ion and lithium-vacancy distributions inside the LiPON are inferred.

  17. Effect of different atmospheres on the electrical contact performance of electronic components under fretting wear

    Science.gov (United States)

    Liu, Xin-Long; Cai, Zhen-Bing; Cui, Ye; Liu, Shan-Bang; Xu, Xiao-Jun; Zhu, Min-Hao

    2018-04-01

    The effects of oxide etch on the surface morphology of metals for industrial application is a common cause of electrical contacts failure, and it has becomes a more severe problem with the miniaturization of modern electronic devices. This study investigated the effects of electrical contact resistance on the contactor under three different atmospheres (oxygen, air, and nitrogen) based on 99.9% copper/pogo pins contacts through fretting experiments. The results showed the minimum and stable electrical contact resistance value when shrouded in the nitrogen environment and with high friction coefficient. The rich oxygen environment promotes the formation of cuprous oxide, thereby the electrical contact resistance increases. Scanning electron microscope microscopy and electron probe microanalysis were used to analyze the morphology and distribution of elements of the wear area, respectively. The surface product between contacts was investigated by x-ray photoelectron spectroscopy analysis to explain the different electrical contact properties of the three tested samples during fretting.

  18. Novel electric double-layer capacitor with a coaxial fiber structure.

    Science.gov (United States)

    Chen, Xuli; Qiu, Longbin; Ren, Jing; Guan, Guozhen; Lin, Huijuan; Zhang, Zhitao; Chen, Peining; Wang, Yonggang; Peng, Huisheng

    2013-11-26

    A coaxial electric double-layer capacitor fiber is developed from the aligned carbon nanotube fiber and sheet, which functions as two electrodes with a polymer gel sandwiched between them. The unique coaxial structure enables a rapid transportation of ions between the two electrodes with a high electrochemical performance. These energy storage fibers are also flexible and stretchable, and can be woven into and widely used for electronic textiles. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. An autonomously electrically self-healing liquid metal-elastomer composite for robust soft-matter robotics and electronics.

    Science.gov (United States)

    Markvicka, Eric J; Bartlett, Michael D; Huang, Xiaonan; Majidi, Carmel

    2018-07-01

    Large-area stretchable electronics are critical for progress in wearable computing, soft robotics and inflatable structures. Recent efforts have focused on engineering electronics from soft materials-elastomers, polyelectrolyte gels and liquid metal. While these materials enable elastic compliance and deformability, they are vulnerable to tearing, puncture and other mechanical damage modes that cause electrical failure. Here, we introduce a material architecture for soft and highly deformable circuit interconnects that are electromechanically stable under typical loading conditions, while exhibiting uncompromising resilience to mechanical damage. The material is composed of liquid metal droplets suspended in a soft elastomer; when damaged, the droplets rupture to form new connections with neighbours and re-route electrical signals without interruption. Since self-healing occurs spontaneously, these materials do not require manual repair or external heat. We demonstrate this unprecedented electronic robustness in a self-repairing digital counter and self-healing soft robotic quadruped that continue to function after significant damage.

  20. Electronic structure of semiconductor quantum films

    International Nuclear Information System (INIS)

    Zhang, S.B.; Yeh, C.; Zunger, A.

    1993-01-01

    The electronic structure of thin (≤30 A) free-standing ideal films of Si(001), Si(110), and GaAs(110) is calculated using a plane-wave pseudopotential description. Unlike the expectation based on the simple effective-mass model, we find the following. (i) The band gaps of (001) quantum films exhibit even-odd oscillation as a function of the number N of monolayers. (ii) In addition to sine-type envelope functions which vanish at the film boundaries, some states have cosine envelope functions with extrema at boundaries. (iii) Even-layer Si(001) films exhibit at the valence-band maximum a state whose energy does not vary with the film thickness. Such zero confinement states have constant envelope throughout the film. (iv) Optical transitions in films exhibit boundary-imposed selection rules. Furthermore, oscillator strengths for pseudodirect transitions in the vicinity of forbidden direct transitions can be enhanced by several orders of magnitude. These findings, obtained in direct supercell calculations, can be explained in terms of a truncated crystal (TC) analysis. In this approach the film's wave functions are expanded in terms of pairs of bulk wave functions exhibiting a destructive interference at the boundaries. This maps the eigenvalue spectra of a film onto the bulk band structure evaluated at special k points which satisfy the boundary conditions. We find that the TC representation reproduces accurately the above-mentioned results of direct diagonalization of the film's Hamiltonian. This provides a simple alternative to the effective-mass model and relates the properties of quantum structures to those of the bulk material

  1. Parallel electric fields accelerating ions and electrons in the same direction

    International Nuclear Information System (INIS)

    Hultqvist, B; Lundin, R.

    1988-01-01

    In this contribution the authors present Viking observations of electrons and positive ions which move upward along the magnetic field lines with energies of the same order of magnitude. The authors propose that both ions and electrons are accelerated by an electric field which has low-frequency temporal variations such that the ions experience and average electrostatic potential drop along the magnetic field lines whereas the upward streaming electrons are accelerated in periods of downward pointing electric field which is quasi-static for the electrons and forces them to beam out of the field region before the field changes direction

  2. Effect of Electrostatic Discharge on Electrical Characteristics of Discrete Electronic Components

    Data.gov (United States)

    National Aeronautics and Space Administration — This article reports on preliminary results of a study conducted to examine how temporary electrical overstress seed fault conditions in discrete power electronic...

  3. A new MSc course on diagnostics of electrical machines and power electronics

    DEFF Research Database (Denmark)

    Leban, Krisztina Monika; Ritchie, Ewen

    2011-01-01

    students. Additionally, specific subjects requested by participants, basic diagnosis and testing methods were presented during the lectures and workshops. General engineering knowledge about electric machines, power electronics and the combination of these was presented. The laboratory method, experiments...

  4. Multiphysics simulation by design for electrical machines, power electronics and drives

    CERN Document Server

    Rosu, Marius; Lin, Dingsheng; Ionel, Dan M; Popescu, Mircea; Blaabjerg, Frede; Rallabandi, Vandana; Staton, David

    2018-01-01

    This book combines the knowledge of experts from both academia and the software industry to present theories of multiphysics simulation by design for electrical machines, power electronics, and drives. The comprehensive design approach described within supports new applications required by technologies sustaining high drive efficiency. The highlighted framework considers the electric machine at the heart of the entire electric drive. The book also emphasizes the simulation by design concept--a concept that frames the entire highlighted design methodology, which is described and illustrated by various advanced simulation technologies. Multiphysics Simulation by Design for Electrical Machines, Power Electronics and Drives begins with the basics of electrical machine design and manufacturing tolerances. It also discusses fundamental aspects of the state of the art design process and includes examples from industrial practice. It explains FEM-based analysis techniques for electrical machine design--providing deta...

  5. SEM technique for imaging and measuring electronic transport in nanocomposites based on electric field induced contrast

    Science.gov (United States)

    Jesse, Stephen [Knoxville, TN; Geohegan, David B [Knoxville, TN; Guillorn, Michael [Brooktondale, NY

    2009-02-17

    Methods and apparatus are described for SEM imaging and measuring electronic transport in nanocomposites based on electric field induced contrast. A method includes mounting a sample onto a sample holder, the sample including a sample material; wire bonding leads from the sample holder onto the sample; placing the sample holder in a vacuum chamber of a scanning electron microscope; connecting leads from the sample holder to a power source located outside the vacuum chamber; controlling secondary electron emission from the sample by applying a predetermined voltage to the sample through the leads; and generating an image of the secondary electron emission from the sample. An apparatus includes a sample holder for a scanning electron microscope having an electrical interconnect and leads on top of the sample holder electrically connected to the electrical interconnect; a power source and a controller connected to the electrical interconnect for applying voltage to the sample holder to control the secondary electron emission from a sample mounted on the sample holder; and a computer coupled to a secondary electron detector to generate images of the secondary electron emission from the sample.

  6. Variable structure unit vector control of electric power generation ...

    African Journals Online (AJOL)

    A variable structure Automatic Generation Control (VSAGC) scheme is proposed in this paper for the control of a single area power system model dominated by steam powered electric generating plants. Unlike existing, VSAGC scheme where the selection of the control function is based on a trial and error procedure, the ...

  7. Complex Colloidal Structures by Self-assembly in Electric Fields

    NARCIS (Netherlands)

    Vutukuri, H.R.

    2012-01-01

    The central theme of this thesis is exploiting the directed self-assembly of both isotropic and anisotropic colloidal particles to achieve the fabrication of one-, two-, and three-dimensional complex colloidal structures using external electric fields and/or a simple in situ thermal annealing

  8. Electrical conductivity of metal–carbon nanotube structures

    Indian Academy of Sciences (India)

    The electrical properties of asymmetric metal–carbon nanotube (CNT) structures have been studied using density functional theory and non-equilibrium Green's function method with Atomistix tool kit. The models with asymmetric metal contacts and carbon nanotube bear resemblance to experimental set-ups. The study ...

  9. Studies in the electronic structure of matter

    International Nuclear Information System (INIS)

    Swarts, C.A.

    1979-01-01

    Chapter I: Here the results of various theories for the angular distribution of electrons photoemitted from the outermost p-shell of rare gas atoms are compared. The theories compared are (I) the local density theories of Slater (X/sub α/) and of Hohenberg, Kohn and Sham, (II) the pseudopotential method, (III) Hartree-Fock theory as evaluated by Kennedy and Manson, and (IV) Amusia's Random Phase Approximation with Exchange (RPAE). It is shown that the local density theories, although simple, generally fail to produce reliable cross section; the more complicated Hartree-Fock method is no more reliable; the a priori RPAE method is most reliable, but tedious; and the phenomenological pseudopotential method offers a good combination of reliability and simplicity. The muffin-tin approximation, widely used in molecular and condensed matter physics, is examined and found to be adequate. Chapter II: Extended Hueckel theory is applied to GaAs, GaP and to the nitrogen isoelectronic trap in GaAs and GaP. The computed perfect crystal band structures are found to be in reasonable agreement with those computed with empirical pseudopotentials. Nitrogen impurity levels in GaAs and GaP are calculated using a cluster model. Chapter III: By means of model calculations for an independent electron metal, we obtain exact lineshapes for the photon absorption, emission and photoemission spectra of deep core states. We find in each case an X-ray edge anomaly as pedicted by Nozieres and De Dominicis. Sumrules are used as a general check on the calculations and to explain the deviations of the exact theory from the exciton theory away from threshold

  10. Nonlinearity in structural and electronic materials

    International Nuclear Information System (INIS)

    Bishop, A.R.; Beardmore, K.M.; Ben-Naim, E.

    1997-01-01

    This is the final report of a three-year, Laboratory Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). The project strengthens a nonlinear technology base relevant to a variety of problems arising in condensed matter and materials science, and applies this technology to those problems. In this way the controlled synthesis of, and experiments on, novel electronic and structural materials provide an important focus for nonlinear science, while nonlinear techniques help advance the understanding of the scientific principles underlying the control of microstructure and dynamics in complex materials. This research is primarily focused on four topics: (1) materials microstructure: growth and evolution, and porous media; (2) textures in elastic/martensitic materials; (3) electro- and photo-active polymers; and (4) ultrafast photophysics in complex electronic materials. Accomplishments included the following: organization of a ''Nonlinear Materials'' seminar series and international conferences including ''Fracture, Friction and Deformation,'' ''Nonequilibrium Phase Transitions,'' and ''Landscape Paradigms in Physics and Biology''; invited talks at international conference on ''Synthetic Metals,'' ''Quantum Phase Transitions,'' ''1996 CECAM Euroconference,'' and the 1995 Fall Meeting of the Materials Research Society; large-scale simulations and microscopic modeling of nonlinear coherent energy storage at crack tips and sliding interfaces; large-scale simulation and microscopic elasticity theory for precursor microstructure and dynamics at solid-solid diffusionless phase transformations; large-scale simulation of self-assembling organic thin films on inorganic substrates; analysis and simulation of smoothing of rough atomic surfaces; and modeling and analysis of flux pattern formation in equilibrium and nonequilibrium Josephson junction arrays and layered superconductors

  11. The Problems of implementation of the European Union directives for electrical and electronic equipment hazardousness

    OpenAIRE

    Vaišvila, Anicetas; Vaičikonis, Eduardas

    2006-01-01

    The problems of implementation of two new EU Directives is discussed in this article. It is so called WEEE (Waste Electrical and Electronic Equipment) and RoHS (Restriction of use of certain Hazardous Substances in electrical and electronic equipment), as well as influence of these directives to quality and environmental management systems. The RoHS directive requires a number of potentially hazardous substances (lead, mercury, cadmium, hexavalent chromium, polybrominated byphenyls (PBB) and ...

  12. Theory of semiconductor junction devices a textbook for electrical and electronic engineers

    CERN Document Server

    Leck, J H

    1967-01-01

    Theory of Semiconductor Junction Devices: A Textbook for Electrical and Electronic Engineers presents the simplified numerical computation of the fundamental electrical equations, specifically Poisson's and the Hall effect equations. This book provides the fundamental theory relevant for the understanding of semiconductor device theory. Comprised of 10 chapters, this book starts with an overview of the application of band theory to the special case of semiconductors, both intrinsic and extrinsic. This text then describes the electrical properties of conductivity, semiconductors, and Hall effe

  13. A device for determination of the electrical potential of a rocket carrying an electron gun

    International Nuclear Information System (INIS)

    Gringauz, K.I.; Musatov, L.S.; Shutte, N.M.; Beliashin, A.P.; Denstchikova, L.I.; Kopilov, V.F.

    1978-01-01

    Data on the principle of operation, sensors and electronics of a device for determination of the electrical potential relative to the surrounding medium of a rocket carrying an electric gun are presented. The device operated successfully on board an Eridan rocket during the ARAKS experiment. (Auth.)

  14. Australian Apprentice & Trainee Statistics: Electrical and Electronics Trades, 1995 to 1999. Australian Vocational Education & Training.

    Science.gov (United States)

    National Centre for Vocational Education Research, Leabrook (Australia).

    Statistics regarding Australians participating in apprenticeships and traineeships in the electrical and electronics trades in 1995-1999 were reviewed to provide an indication of where skill shortages may be occurring or will likely occur in relation to the following occupations: electrical engineering associate professional; electronics…

  15. III - V semiconductor structures for biosensor and molecular electronics applications

    Energy Technology Data Exchange (ETDEWEB)

    Luber, S M

    2007-01-15

    The present work reports on the employment of III-V semiconductor structures to biosensor and molecular electronics applications. In the first part a sensor based on a surface-near two dimensional electron gas for a use in biological environment is studied. Such a two dimensional electron gas inherently forms in a molecular beam epitaxy (MBE) grown, doped aluminum gallium arsenide - gallium arsenide (AlGaAs-GaAs) heterostructure. Due to the intrinsic instability of GaAs in aqueous solutions the device is passivated by deposition of a monolayer of 4'-substituted mercaptobiphenyl molecules. The influence of these molecules which bind to the GaAs via a sulfur group is investigated by Kelvin probe measurements in air. They reveal a dependence of GaAs electron affinity on the intrinsic molecular dipole moment of the mercaptobiphenyls. Furthermore, transient surface photovoltage measurements are presented which demonstrate an additional influence of mercaptobiphenyl chemisorption on surface carrier recombination rates. As a next step, the influence of pH-value and salt concentration upon the sensor device is discussed based on the results obtained from sensor conductance measurements in physiological solutions. A dependence of the device surface potential on both parameters due to surface charging is deduced. Model calculations applying Poisson-Boltzmann theory reveal as possible surface charging mechanisms either the adsorption of OH- ions on the surface, or the dissociation of OH groups in surface oxides. A comparison between simulation settings and physical device properties indicate the OH- adsorption as the most probable mechanism. In the second part of the present study the suitability of MBE grown III-V semiconductor structures for molecular electronics applications is examined. In doing so, a method to fabricate nanometer separated, coplanar, metallic electrodes based on the cleavage of a supporting AlGaAs-GaAs heterostructure is presented. This is followed by a

  16. III - V semiconductor structures for biosensor and molecular electronics applications

    Energy Technology Data Exchange (ETDEWEB)

    Luber, S.M.

    2007-01-15

    The present work reports on the employment of III-V semiconductor structures to biosensor and molecular electronics applications. In the first part a sensor based on a surface-near two dimensional electron gas for a use in biological environment is studied. Such a two dimensional electron gas inherently forms in a molecular beam epitaxy (MBE) grown, doped aluminum gallium arsenide - gallium arsenide (AlGaAs-GaAs) heterostructure. Due to the intrinsic instability of GaAs in aqueous solutions the device is passivated by deposition of a monolayer of 4'-substituted mercaptobiphenyl molecules. The influence of these molecules which bind to the GaAs via a sulfur group is investigated by Kelvin probe measurements in air. They reveal a dependence of GaAs electron affinity on the intrinsic molecular dipole moment of the mercaptobiphenyls. Furthermore, transient surface photovoltage measurements are presented which demonstrate an additional influence of mercaptobiphenyl chemisorption on surface carrier recombination rates. As a next step, the influence of pH-value and salt concentration upon the sensor device is discussed based on the results obtained from sensor conductance measurements in physiological solutions. A dependence of the device surface potential on both parameters due to surface charging is deduced. Model calculations applying Poisson-Boltzmann theory reveal as possible surface charging mechanisms either the adsorption of OH- ions on the surface, or the dissociation of OH groups in surface oxides. A comparison between simulation settings and physical device properties indicate the OH- adsorption as the most probable mechanism. In the second part of the present study the suitability of MBE grown III-V semiconductor structures for molecular electronics applications is examined. In doing so, a method to fabricate nanometer separated, coplanar, metallic electrodes based on the cleavage of a supporting AlGaAs-GaAs heterostructure is presented. This is followed

  17. Electric Charge Accumulation in Polar and Non-Polar Polymers under Electron Beam Irradiation

    Science.gov (United States)

    Nagasawa, Kenichiro; Honjoh, Masato; Takada, Tatsuo; Miyake, Hiroaki; Tanaka, Yasuhiro

    The electric charge accumulation under an electron beam irradiation (40 keV and 60 keV) was measured by using the pressure wave propagation (PWP) method in the dielectric insulation materials, such as polar polymeric films (polycarbonate (PC), polyethylene-naphthalate (PEN), polyimide (PI), and polyethylene-terephthalate (PET)) and non-polar polymeric films (polystyrene (PS), polypropylene (PP), polyethylene (PE) and polytetrafluoroethylene (PTFE)). The PE and PTFE (non-polar polymers) showed the properties of large amount of electric charge accumulation over 50 C/m3 and long saturation time over 80 minutes. The PP and PS (non-polar polymer) showed the properties of middle amount of charge accumulation about 20 C/m3 and middle saturation time about 1 to 20 minutes. The PC, PEN, PI and PET (polar polymers) showed the properties of small amount of charge accumulation about 5 to 20 C/m3 and within short saturation time about 1.0 minutes. This paper summarizes the relationship between the properties of charge accumulation and chemical structural formula, and compares between the electro static potential distribution with negative charged polymer and its chemical structural formula.

  18. Electric charge accumulation in polar and non-polar polymers under electron beam irradiation

    International Nuclear Information System (INIS)

    Nagasawa, Kenichiro; Honjoh, Masato; Takada, Tatsuo; Miyake, Hiroaki; Tanaka, Yasuhiro

    2010-01-01

    The electric charge accumulation under an electron beam irradiation (40 keV and 60 keV) was measured by using the pressure wave propagation (PWP) method in the dielectric insulation materials, such as polar polymeric films (polycarbonate (PC), polyethylene-naphthalate (PEN), polyimide (PI), and polyethylene-terephthalate (PET)) and non-polar polymeric films (polystyrene (PS), polypropylene (PP), polyethylene (PE) and polytetrafluoroethylene (PTFE)). The PE and PTFE (non-polar polymers) showed the properties of large amount of electric charge accumulation over 50 C/m 3 and long saturation time over 80 minutes. The PP and PS (non-polar polymer) showed the properties of middle amount of charge accumulation about 20 C/m 3 and middle saturation time about 1 to 20 minutes. The PC, PEN, PI and PET (polar polymers) showed the properties of small amount of charge accumulation about 5 to 20 C/m 3 and within short saturation time about 1.0 minutes. This paper summarizes the relationship between the properties of charge accumulation and chemical structural formula, and compares between the electro static potential distribution with negative charged polymer and its chemical structural formula. (author)

  19. Module Ten: Transformers; Basic Electricity and Electronics Individualized Learning System.

    Science.gov (United States)

    Bureau of Naval Personnel, Washington, DC.

    The module introduces a very important electrical device, the transformer. The module is divided into six lessons: transformer construction, transformer theory and operation, turns and voltage ratios, power and current, transformer efficiency, and semiconductor rectifiers. Each lesson consists of an overview, a list of study resources, lesson…

  20. Structural and electrical characterization of zinc oxide doped with antimony

    Directory of Open Access Journals (Sweden)

    G. Juárez Díaz

    2014-08-01

    Full Text Available In this work we report the results of structural and electrical characterization realized on zinc oxide single crystal samples with (001 orientation, which were doped with antimony. Doping was carried out by antimony thermal diffusion at 1000 °C for periods of 1 and 2 hours under nitrogen environment from a solid source formed by antimony oxide. Electrical characterization by I-V curves and Hall effect shown an increase in acceptor concentration which demonstrates that doping is effective and create holes in zinc oxide samples.

  1. Electronic structure and the properties of phosphorene and few-layer black phosphorus

    International Nuclear Information System (INIS)

    Fukuoka, Shuhei; Taen, Toshihiro; Osada, Toshihito

    2015-01-01

    A single atomic layer of black phosphorus, phosphorene, was experimentally realized in 2014. It has a puckered honeycomb lattice structure and a semiconducting electronic structure. In the first part of this paper, we use a simple LCAO model, and qualitatively discuss the electronic structure of phosphorene systems under electric and magnetic fields, especially noting their midgap edge states. The next part is devoted to the review of the progress in research on phosphorene over the past one year since its realization in 2014. Phosphorene has been a typical material to study the semiconductor physics in atomic layers. (author)

  2. Operating Organic Electronics via Aqueous Electric Double Layers

    OpenAIRE

    Toss, Henrik

    2015-01-01

    The field of organic electronics emerged in the 1970s with the discovery of conducting polymers. With the introduction of plastics as conductors and semiconductors came many new possibilities both in production and function of electronic devices. Polymers can often be processed from solution and their softness provides both the possibility of working on flexible substrates, and various advantages in interfacing with other soft materials, e.g. biological samples and specimens. Conducting polym...

  3. Electronic structures and magnetic/optical properties of metal phthalocyanine complexes

    Energy Technology Data Exchange (ETDEWEB)

    Baba, Shintaro; Suzuki, Atsushi, E-mail: suzuki@mat.usp.ac.jp; Oku, Takeo [Department of Materials Science, The University of Shiga Prefecture. 2500 Hassaka, Hikone, Shiga 522-8533 (Japan)

    2016-02-01

    Electronic structures and magnetic / optical properties of metal phthalocyanine complexes were studied by quantum calculations using density functional theory. Effects of central metal and expansion of π orbital on aromatic ring as conjugation system on the electronic structures, magnetic, optical properties and vibration modes of infrared and Raman spectra of metal phthalocyanines were investigated. Electron and charge density distribution and energy levels near frontier orbital and excited states were influenced by the deformed structures varied with central metal and charge. The magnetic parameters of chemical shifts in {sup 13}C-nuclear magnetic resonance ({sup 13}C-NMR), principle g-tensor, A-tensor, V-tensor of electric field gradient and asymmetry parameters derived from the deformed structures with magnetic interaction of nuclear quadruple interaction based on electron and charge density distribution with a bias of charge near ligand under crystal field.

  4. Nanocrystalline SnO2 thin films: Structural, morphological, electrical transport and optical studies

    International Nuclear Information System (INIS)

    Sakhare, R.D.; Khuspe, G.D.; Navale, S.T.; Mulik, R.N.; Chougule, M.A.; Pawar, R.C.; Lee, C.S.; Sen, Shashwati; Patil, V.B.

    2013-01-01

    Highlights: ► Novel chemical route of synthesis of SnO 2 films. ► Physical properties SnO 2 are influenced by process temperature. ► The room temperature electrical conductivity of SnO 2 is of 10 −7 –10 −5 (Ω cm) −1 . ► SnO 2 exhibit high absorption coefficient (10 4 cm −1 ). -- Abstract: Sol–gel spin coating method has been successfully employed for preparation of nanocrystalline tin oxide (SnO 2 ) thin films. The effect of processing temperature on the structure, morphology, electrical conductivity, thermoelectric power and band gap was studied using X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy, selected area electron diffraction pattern, atomic force microscopy, two probe technique and UV–visible spectroscopy. X-ray diffraction (XRD) analysis showed that SnO 2 films are crystallized in the tetragonal phase and present a random orientation. Field emission scanning electron microscopy (FESEM) analysis revealed that surface morphology of the tin oxide film consists nanocrystalline grains with uniform coverage of the substrate surface. Transmission electron microscopy (TEM) of SnO 2 film showed nanocrystals having diameter ranging from 5 to 10 nm. Selected area electron diffraction (SAED) pattern confirms tetragonal phase evolution of SnO 2 . Atomic force microscopy (AFM) analysis showed surface morphology of SnO 2 film is smooth. The dc electrical conductivity showed the semiconducting nature with room temperature electrical conductivity increased from 10 −7 to 10 −5 (Ω cm) −1 as processing temperature increased from 400 to 700 °C. Thermo power measurement confirms n-type conduction. The band gap energy of SnO 2 film decreased from 3.88 to 3.60 eV as processing temperature increased from 400 to 700 °C

  5. The changing structure of the electric power industry: An update

    International Nuclear Information System (INIS)

    1996-12-01

    The U. S. electric power industry today is on the road to restructuring a road heretofore uncharted. While parallels can be drawn from similar journeys taken by the airline industry, the telecommunications industry, and, most recently, the natural gas industry, the electric power industry has its own unique set of critical issues that must be resolved along the way. The transition will be from a structure based on a vertically integrated and regulated monopoly to one equipped to function successfully in a competitive market. The long-standing traditional structure of the electric power industry is the result of a complex web of events that have been unfolding for over 100 years. Some of these events had far-reaching and widely publicized effects. Other major events took the form of legislation. Still other events had effects that are less obvious in comparison (e.g., the appearance of technologies such as transformers and steam and gas turbines, the invention of home appliances, the man-made fission of uranium), and it is likely that their significance in the history of the industry has been obscured by the passage of time. Nevertheless, they, too, hold a place in the underpinnings of today's electric industry structure. The purpose of this report, which is intended for both lay and technical readers, is twofold. First, it is a basic reference document that provides a comprehensive delineation of the electric power industry and its traditional structure, which has been based upon its monopoly status. Second, it describes the industry's transition to a competitive environment by providing a descriptive analysis of the factors that have contributed to the interest in a competitive market, proposed legislative and regulatory actions, and the steps being taken by the various components of the industry to meet the challenges of adapting to and prevailing in a competitive environment

  6. The changing structure of the electric power industry: An update

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1996-12-01

    The U. S. electric power industry today is on the road to restructuring a road heretofore uncharted. While parallels can be drawn from similar journeys taken by the airline industry, the telecommunications industry, and, most recently, the natural gas industry, the electric power industry has its own unique set of critical issues that must be resolved along the way. The transition will be from a structure based on a vertically integrated and regulated monopoly to one equipped to function successfully in a competitive market. The long-standing traditional structure of the electric power industry is the result of a complex web of events that have been unfolding for over 100 years. Some of these events had far-reaching and widely publicized effects. Other major events took the form of legislation. Still other events had effects that are less obvious in comparison (e.g., the appearance of technologies such as transformers and steam and gas turbines, the invention of home appliances, the man-made fission of uranium), and it is likely that their significance in the history of the industry has been obscured by the passage of time. Nevertheless, they, too, hold a place in the underpinnings of today`s electric industry structure. The purpose of this report, which is intended for both lay and technical readers, is twofold. First, it is a basic reference document that provides a comprehensive delineation of the electric power industry and its traditional structure, which has been based upon its monopoly status. Second, it describes the industry`s transition to a competitive environment by providing a descriptive analysis of the factors that have contributed to the interest in a competitive market, proposed legislative and regulatory actions, and the steps being taken by the various components of the industry to meet the challenges of adapting to and prevailing in a competitive environment.

  7. On the electric breakdown field of the mesosphere and the influence of electron detachment

    DEFF Research Database (Denmark)

    Neubert, Torsten; Chanrion, Olivier Arnaud

    2013-01-01

    It has been suggested recently that electron associative detachment from negative atomic oxygen ions provides an additional source of free electrons in electric discharges of the mesosphere, the sprites, and gigantic jets. Here we study attachment under some simplifying assumptions and show...... that the threshold field decreases with time and can reach values well below the conventional threshold field. The concept of a fixed threshold field therefore itself breaks down. We find that the growth rate decreases with decreasing electric field and that long exposure time of electric fields therefore is needed...

  8. Electronic properties of phosphorene/graphene heterostructures: Effect of external electric field

    Energy Technology Data Exchange (ETDEWEB)

    Kaur, Sumandeep; Srivastava, Sunita; Tankeshwar, K. [Department of Physics, Panjab University, Chandigarh-160014 (India); Kumar, Ashok [Centre for Physical Sciences, School of Basic and Applied Sciences, Central University of Punjab, Bathinda, India 151001 (India)

    2016-05-23

    We report the electronic properties of electrically gated heterostructures of black and blue phosphorene with graphene. The heterostructure of blue phosphorene with graphene is energetically more favorable than black phospherene/graphene. However, both are bonded by weak interlayer interactions. Graphene induces the Dirac cone character in both heterostructure which shows tunabilities with external electric field. It is found that Dirac cone get shifted depending on the polarity of external electric field that results into the so called self induced p-type or n-type doping effect. These features have importance in the fabrication of nano-electronic devices based on the phosphorene/graphene heterostructures.

  9. Electron Electric Dipole Moment from CP Violation in the Charged Higgs Sector

    International Nuclear Information System (INIS)

    Bowser-Chao, D.; Keung, W.; Chang, D.; Chang, D.

    1997-01-01

    The leading contributions to the electron (or muon) electric dipole moment due to CP violation in the charged Higgs sector are at the two level. A careful model-independent analysis of the heavy fermion contribution is provided. We also consider some specific scenarios to demonstrate how charged Higgs sector CP violation can naturally give rise to large electric dipole moments. Numerical results show that the electron electric dipole moment in such models can lie at the experimentally accessible level. copyright 1997 The American Physical Society

  10. Role of Electrical Double Layer Structure in Ionic Liquid Gated Devices.

    Science.gov (United States)

    Black, Jennifer M; Come, Jeremy; Bi, Sheng; Zhu, Mengyang; Zhao, Wei; Wong, Anthony T; Noh, Joo Hyon; Pudasaini, Pushpa R; Zhang, Pengfei; Okatan, Mahmut Baris; Dai, Sheng; Kalinin, Sergei V; Rack, Philip D; Ward, Thomas Zac; Feng, Guang; Balke, Nina

    2017-11-22

    Ionic liquid gating of transition metal oxides has enabled new states (magnetic, electronic, metal-insulator), providing fundamental insights into the physics of strongly correlated oxides. However, despite much research activity, little is known about the correlation of the structure of the liquids in contact with the transition metal oxide surface, its evolution with the applied electric potential, and its correlation with the measured electronic properties of the oxide. Here, we investigate the structure of an ionic liquid at a semiconducting oxide interface during the operation of a thin film transistor where the electrical double layer gates the device using experiment and theory. We show that the transition between the ON and OFF states of the amorphous indium gallium zinc oxide transistor is accompanied by a densification and preferential spatial orientation of counterions at the oxide channel surface. This process occurs in three distinct steps, corresponding to ion orientations, and consequently, regimes of different electrical conductivity. The reason for this can be found in the surface charge densities on the oxide surface when different ion arrangements are present. Overall, the field-effect gating process is elucidated in terms of the interfacial ionic liquid structure, and this provides unprecedented insight into the working of a liquid gated transistor linking the nanoscopic structure to the functional properties. This knowledge will enable both new ionic liquid design as well as advanced device concepts.

  11. Structural and Electrical Analysis of Various MOSFET Designs

    OpenAIRE

    Pallavi Choudhary; Tarun Kapoor

    2015-01-01

    Invention of Transistor is the foundation of electronics industry. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has been the key to the development of nano electronics technology. This paper offers a brief review of some of the most popular MOSFET structure designs. The scaling down of planar bulk MOSFET proposed by the Moore’s Law has been saturated due to short channel effects and DIBL. Due to this alternative approaches has been considered to overcome the problems...

  12. Electrical and structural properties of ZnO synthesized via infiltration of lithographically defined polymer templates

    International Nuclear Information System (INIS)

    Nam, Chang-Yong; Stein, Aaron; Kisslinger, Kim; Black, Charles T.

    2015-01-01

    We investigate the electrical and structural properties of infiltration-synthesized ZnO. In-plane ZnO nanowire arrays with prescribed positional registrations are generated by infiltrating diethlyzinc and water vapor into lithographically defined SU-8 polymer templates and removing organic matrix by oxygen plasma ashing. Transmission electron microscopy reveals that homogeneously amorphous as-infiltrated polymer templates transform into highly nanocrystalline ZnO upon removal of organic matrix. Field-effect transistor device measurements show that the synthesized ZnO after thermal annealing displays a typical n-type behavior, ∼10 19  cm −3 carrier density, and ∼0.1 cm 2 V −1 s −1 electron mobility, reflecting highly nanocrystalline internal structure. The results demonstrate the potential application of infiltration synthesis in fabricating metal oxide electronic devices

  13. Electric field dependence of the electron mobility in bulk wurtzite ZnO

    Indian Academy of Sciences (India)

    Electric field dependence of the electron mobility in bulk wurtzite ZnO. K ALFARAMAWI ... tion to ultraviolet light emitters, gas sensors, surface acoustic wave devices and ..... Dorkel J M and Leturcq P H 1981 Solid-State Electron. 24 8211.

  14. Electron collision frequency variations and electric fields in the lower ionosphere

    International Nuclear Information System (INIS)

    Gokov, A.M.; Martynenko, S.I.

    1997-01-01

    Distribution of relative variations of the electron effective collision frequency at the ionosphere lower boundary is determined on the basis of analysis of radio-signals partially reflected from the lower ionosphere. Technique to evaluate the strength of electrical fields at the ionosphere lower boundary using experimentally measured variations of the effective frequency of electron collisions is elaborated. 12 refs., 2 figs

  15. Graph-based linear scaling electronic structure theory

    Energy Technology Data Exchange (ETDEWEB)

    Niklasson, Anders M. N., E-mail: amn@lanl.gov; Negre, Christian F. A.; Cawkwell, Marc J.; Swart, Pieter J.; Germann, Timothy C.; Bock, Nicolas [Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Mniszewski, Susan M.; Mohd-Yusof, Jamal; Wall, Michael E.; Djidjev, Hristo [Computer, Computational, and Statistical Sciences Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Rubensson, Emanuel H. [Division of Scientific Computing, Department of Information Technology, Uppsala University, Box 337, SE-751 05 Uppsala (Sweden)

    2016-06-21

    We show how graph theory can be combined with quantum theory to calculate the electronic structure of large complex systems. The graph formalism is general and applicable to a broad range of electronic structure methods and materials, including challenging systems such as biomolecules. The methodology combines well-controlled accuracy, low computational cost, and natural low-communication parallelism. This combination addresses substantial shortcomings of linear scaling electronic structure theory, in particular with respect to quantum-based molecular dynamics simulations.

  16. Unified analytical treatment of multicentre electron attraction, electric field and electric field gradient integrals over Slater orbitals

    International Nuclear Information System (INIS)

    Guseinov, I I

    2004-01-01

    The new central and noncentral potential functions (CPFs and NCPFs) of a molecule depending on the coordinates of the nuclei are introduced. Using complete orthonormal sets of Ψ α -exponential-type orbitals (Ψ α -ETOs) introduced by the author, the series expansion formulae for the multicentre electronic attraction (EA), electric field (EF) and electric field gradient (EFG) integrals over Slater-type orbitals (STOs) in terms of CPFs and NCPFs are derived. The relationships obtained are valid for the arbitrary location, quantum numbers and screening constants of STOs

  17. Energy consumption of SO2 removal from humid air under electron beam and electric field influence

    International Nuclear Information System (INIS)

    Nichipor, H.; Radjuk, E.; Chmielewski, A.G.; Zimek, Z.

    1998-01-01

    The kinetic of SO 2 oxidation in humid air under influence of electron beam and electrical field was investigated by computer simulation method in steady state and pulse mode. SO 2 oxidation process was stimulated by radical and ion reactions. The calculation model has included 46 different particles and 160 chemical reactions. Gas mixture containing 1000 ppm of SO 2 concentration was investigated at temperature T=67 deg. C and pressure p=1 at. Water content was within the range 2-12%. Electron beam parameters were as follows: average beam current density 0.0032-3,2 mA/cm 2 , pulse duration 400 μs, repetition rate 50 Hz. Electrical field density was E/n =10 -15 Vcm 2 . Electrical pulse duration was changed within the range 5 x10 -7 -10 -5 s. The influence of the parameters of synchronized electron beam and electrical field pulses on energy deposition was under consideration. Energy cost of SO 2 removal on 90% level was estimated in steady state and pulse modes. It was found that total electron beam and electrical field energy losses in pulse mode are 6 times lower to compare with steady state conditions. The optimum of electrical field pulse duration from point of view minimum energy cost of SO 2 removal was found for different electron beam pulse current levels

  18. Rocket measurements of electric fields, electron density and temperature during the three phases of auroral substorms

    International Nuclear Information System (INIS)

    Marklund, G.; Block, L.; Lindqvist, P.-A.

    1979-12-01

    On Jan. 27, 1979, three rocket payloads were launched from Kiruna, Sweden, into different phases of two successive auroral substorms. Among other experiments, the payloads carried the RIT double probe electric field experiments, providing electric field, electron density and temperature data, which are presented here. These are discussed in association with observations of particles, ionospheric drifts (STARE) and electric fields in the equatorial plane (GEOS). The motions of the auroral forms, as obtained from auroral pictures are compared with the E x B/B 2 drifts and the currents calculated from the rocket electric field and density measurements with the equivalent current system deduced from ground based magnetometer data (SMA). (Auth.)

  19. Theory of Electric-Field Effects on Electron-Spin-Resonance Hyperfine Couplings

    International Nuclear Information System (INIS)

    Karna, S.P.

    1997-01-01

    A quantum mechanical theory of the effects of a uniform electric field on electron-spin-resonance hyperfine couplings is presented. The electric-field effects are described in terms of perturbation coefficients which can be used to probe the local symmetry as well as the strength of the electric field at paramagnetic sites in a solid. Results are presented for the first-order perturbation coefficients describing the Bloembergen effect (linear electric-field effect on hyperfine coupling tensor) for the O atom and the OH radical. copyright 1997 The American Physical Society

  20. Structures of water molecules in carbon nanotubes under electric fields

    International Nuclear Information System (INIS)

    Winarto,; Takaiwa, Daisuke; Yamamoto, Eiji; Yasuoka, Kenji

    2015-01-01

    Carbon nanotubes (CNTs) are promising for water transport through membranes and for use as nano-pumps. The development of CNT-based nanofluidic devices, however, requires a better understanding of the properties of water molecules in CNTs because they can be very different from those in the bulk. Using all-atom molecular dynamics simulations, we investigate the effect of axial electric fields on the structure of water molecules in CNTs having diameters ranging from (7,7) to (10,10). The water dipole moments were aligned parallel to the electric field, which increases the density of water inside the CNTs and forms ordered ice-like structures. The electric field induces the transition from liquid to ice nanotubes in a wide range of CNT diameters. Moreover, we found an increase in the lifetime of hydrogen bonds for water structures in the CNTs. Fast librational motion breaks some hydrogen bonds, but the molecular pairs do not separate and the hydrogen bonds reform. Thus, hydrogen bonds maintain the water structure in the CNTs, and the water molecules move collectively, decreasing the axial diffusion coefficient and permeation rate

  1. Electronic structure and chemical properties of superheavy elements

    Energy Technology Data Exchange (ETDEWEB)

    Pershina, V [Gesellschaft fuer Schwerionenforschung (GSI), Helmholtzzentrum fuer Schwerionenforschung Gmbh (Germany)

    2009-12-31

    Relativistic electronic structure calculations of superheavy elements (Z>=104) are analyzed. Preference is given to those related to experimental research. The role of relativistic effects is discussed.

  2. Electrical field excitation in non-uniform plasma by a modulated electron beam

    International Nuclear Information System (INIS)

    Anisimov, I.O.; Borisov, O.A.

    2000-01-01

    Excitation of electric fields due to a modulated electron beam in a warm non-uniform plasma is treated for weak beams in warm plasma. It is shown that the maximum electric field magnitude that is reached near the local plasma resonance point depends significantly on the direction of the electron stream motion. In collisional plasma the magnitude of the Langmuir wave that propagates to the subcritical plasma also depends on the direction of the electron stream motion. The motion of the modulated electron stream front results in beatings between oscillations on the modulation frequency and on the local electron plasma frequencies at the initial moment. Later these beatings damp in the supercritical plasma, whereas in the subcritical plasma they are transformed into spatial beatings between the field of the modulated electron stream and the excited Langmuir wave. (orig.)

  3. Two-electron states in double quantum dot in direct electric field

    International Nuclear Information System (INIS)

    Burdov, V.A.

    2001-01-01

    One determined analytically the wave functions of stationary states and the spectrum of two-electron system in symmetric binary quantum point. It is shown that in the normal state at the absence of external electric field the electrons due to the Coulomb blockade can not be collectively in one quantum point. In the external electric field the situation changes. When a certain critical value of field intensity is reached the probability of detection of both electrons in one quantum point by a jump increases from zero up to 1 [ru

  4. Challenges in legislation, recycling system and technical system of waste electrical and electronic equipment in China.

    Science.gov (United States)

    Zhang, Shengen; Ding, Yunji; Liu, Bo; Pan, De'an; Chang, Chein-chi; Volinsky, Alex A

    2015-11-01

    Waste electrical and electronic equipment (WEEE) has been one of the fastest growing waste streams worldwide. Effective and efficient management and treatment of WEEE has become a global problem. As one of the world's largest electronic products manufacturing and consumption countries, China plays a key role in the material life cycle of electrical and electronic equipment. Over the past 20 years, China has made a great effort to improve WEEE recycling. Centered on the legal, recycling and technical systems, this paper reviews the progresses of WEEE recycling in China. An integrated recycling system is proposed to realize WEEE high recycling rate for future WEEE recycling. Copyright © 2015 Elsevier Ltd. All rights reserved.

  5. Dusty plasmas in a constant electric field: Role of the electron drag force

    International Nuclear Information System (INIS)

    Khrapak, S.A.; Morfill, G.E.

    2004-01-01

    We investigate the forces experienced by a microparticle immersed in a weakly ionized plasma with constant electric field. These are electric force and the forces associated with the momentum transfer from electrons and ions drifting in the field (electron and ion drag forces). It is shown that the effect of the electron drag, which is often neglected, can be substantial in a certain parameter range. Numerical calculation of the forces for a reasonable set of plasma parameters is performed to illustrate the importance of this effect

  6. Local spin torque induced by electron electric dipole moment in the YbF molecule

    Energy Technology Data Exchange (ETDEWEB)

    Fukuda, Masahiro; Senami, Masato; Ogiso, Yoji; Tachibana, Akitomo [Department of Micro Engineering, Kyoto University, Kyoto 615-8540 (Japan)

    2014-10-06

    In this study, we show the modification of the equation of motion of the electronic spin, which is derived by the quantum electron spin vorticity principle, by the effect of the electron electric dipole moment (EDM). To investigate the new contribution to spin torque by EDM, using first principle calculations, we visualize distributions of the local spin angular momentum density and local spin torque density of the YbF molecule on which the static electric field and magnetic field are applied at t = 0.

  7. Stage structure and electrical properties of rubidium-doped pentacene

    International Nuclear Information System (INIS)

    Matsuo, Yasumitsu; Sasaki, Sachio; Ikehata, Seiichiro

    2004-01-01

    We have investigated the structural and electrical properties on the molecular conductor based on pentacene doped with rubidium. It was found from the X-ray diffraction measurement that the rubidium-doped pentacene becomes a highly oriented film with a stage-1 structure, as seen in graphite intercalated compounds. It was also found from this result that the length between pentacene molecular layers increases from 1.51 nm of pure pentacene to 1.62 nm. Moreover, the result of the electrical conductivity measurement shows that by doping of rubidium electrical conductivity at room temperature increases above 10 8 times larger than that of pure pentacene. We have also found that the electrical conductivity along the a-b plane (parallel to the molecular layers) is 10 2 times larger than that along the c-axis which is perpendicular to the molecular layers. These results indicate that pentacene doped with rubidium becomes a molecular conductor and displays the quasi-two-dimensional conductivity

  8. Electronic structure imperfections and chemical bonding at graphene interfaces

    Science.gov (United States)

    Schultz, Brian Joseph

    The manifestation of novel phenomena upon scaling to finite size has inspired a paradigm shift in materials science that takes advantage of the distinctive electrical and physical properties of nanomaterials. Remarkably, the simple honeycomb arrangement of carbon atoms in a single atomic layer has become renowned for exhibiting never-before-seen electronic and physical phenomena. This archetypal 2-dimensional nanomaterial is known as graphene, a single layer of graphite. Early reports in the 1950's eluded to graphene-like nanostructures that were evidenced from exfoliation of oxidized graphite followed by chemical reduction, absorbed carbon on transition metals, and thermal decomposition of SiC. Furthermore, the earliest tight binding approximation calculations in the 1950's held clues that a single-layer of graphite would behave drastically different than bulk graphite. Not until 2004, when Giem and Novoselov first synthesized graphene by mechanical exfoliation from highly-oriented pyrolytic graphite did the field of graphene-based research bloom within the scientific community. Since 2004, the availability and relatively straight forward synthesis of single-layer graphene (SLG) enabled the observation of remarkable phenomena including: massless Dirac fermions, extremely high mobilities of its charge carriers, room temperature half-integer quantum Hall effect, the Rashba effect, and the potential for ballistic conduction over macroscopic distances. These enticing electronic properties produce the drive to study graphene for use in truly nanoscale electrical interconnects, integrated circuits, transparent conducting electrodes, ultra-high frequency transistors, and spintronic devices, just to name a few. Yet, for almost all real world applications graphene will need to be interfaced with other materials, metals, dielectrics, organics, or any combination thereof that in turn are constituted from various inorganic and organic components. Interfacing graphene, a

  9. Single Nanostructure Electrochemical Devices for Studying Electronic Properties and Structural Changes in Lithiated Si Nanowires

    KAUST Repository

    McDowell, Matthew T.; Cui, Yi

    2011-01-01

    Nanostructured Si is a promising anode material for the next generation of Li-ion batteries, but few studies have focused on the electrical properties of the Li-Si alloy phase, which are important for determining power capabilities and ensuring sufficient electrical conduction in the electrode structure. Here, we demonstrate an electrochemical device framework suitable for testing the electrical properties of single Si nanowires (NWs) at different lithiation states and correlating these properties with structural changes via transmission electron microscopy (TEM). We fi nd that single Si NWs usually exhibit Ohmic I - V response in the lithiated state, with conductivities two to three orders of magnitude higher than in the delithiated state. After a number of sequential lithiation/delithiation cycles, the single NWs show similar conductivity after each lithiation step but show large variations in conductivity in the delithiated state. Finally, devices with groups of NWs in physical contact were fabricated, and structural changes in the NWs were observed after lithiation to investigate how the electrical resistance of NW junctions and the NWs themselves affect the lithiation behavior. The results suggest that electrical resistance of NW junctions can limit lithiation. Overall, this study shows the importance of investigating the electronic properties of individual components of a battery electrode (single nanostructures in this case) along with studying the nature of interactions within a collection of these component structures. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Single Nanostructure Electrochemical Devices for Studying Electronic Properties and Structural Changes in Lithiated Si Nanowires

    KAUST Repository

    McDowell, Matthew T.

    2011-07-19

    Nanostructured Si is a promising anode material for the next generation of Li-ion batteries, but few studies have focused on the electrical properties of the Li-Si alloy phase, which are important for determining power capabilities and ensuring sufficient electrical conduction in the electrode structure. Here, we demonstrate an electrochemical device framework suitable for testing the electrical properties of single Si nanowires (NWs) at different lithiation states and correlating these properties with structural changes via transmission electron microscopy (TEM). We fi nd that single Si NWs usually exhibit Ohmic I - V response in the lithiated state, with conductivities two to three orders of magnitude higher than in the delithiated state. After a number of sequential lithiation/delithiation cycles, the single NWs show similar conductivity after each lithiation step but show large variations in conductivity in the delithiated state. Finally, devices with groups of NWs in physical contact were fabricated, and structural changes in the NWs were observed after lithiation to investigate how the electrical resistance of NW junctions and the NWs themselves affect the lithiation behavior. The results suggest that electrical resistance of NW junctions can limit lithiation. Overall, this study shows the importance of investigating the electronic properties of individual components of a battery electrode (single nanostructures in this case) along with studying the nature of interactions within a collection of these component structures. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Evaluation on electrical resistivity of silicon materials after electron ...

    Indian Academy of Sciences (India)

    Administrator

    3Department of Physics, Balochistan University of Information Technology, Engineering and Management Sciences, ... 1 m3, an electron beam gun with an accelerating voltage of 30 kV ... interface formed in figure 1b–e, which is not exactly at.

  12. Electron–electron interactions and the electrical resistivity of lithium ...

    Indian Academy of Sciences (India)

    is governed mainly by electron–electron and electron–phonon interactions. ... This phase change is the root cause of lithium for its abnormal behavior as .... rule. The range of g has been taken from 0 to 2 in the units of kF, the Fermi wave vector. By varying g we are varying the angle between the incident and the scat-.

  13. Fault Diagnosis for Electrical Distribution Systems using Structural Analysis

    DEFF Research Database (Denmark)

    Knüppel, Thyge; Blanke, Mogens; Østergaard, Jacob

    2014-01-01

    redundancies in large sets of equations only from the structure (topology) of the equations. A salient feature is automated generation of redundancy relations. The method is indeed feasible in electrical networks where circuit theory and network topology together formulate the constraints that define...... relations (ARR) are likely to change. The algorithms used for diagnosis may need to change accordingly, and finding efficient methods to ARR generation is essential to employ fault-tolerant methods in the grid. Structural analysis (SA) is based on graph-theoretical results, that offer to find analytic...... a structure graph. This paper shows how three-phase networks are modelled and analysed using structural methods, and it extends earlier results by showing how physical faults can be identified such that adequate remedial actions can be taken. The paper illustrates a feasible modelling technique for structural...

  14. Structure of the radial electric field and toroidal/poloidal flow in high temperature toroidal plasma

    International Nuclear Information System (INIS)

    Ida, Katsumi

    2001-01-01

    The structure of the radial electric field and toroidal/poloidal flow is discussed for the high temperature plasma in toroidal systems, tokamak and Heliotron type magnetic configurations. The spontaneous toroidal and poloidal flows are observed in the plasma with improved confinement. The radial electric field is mainly determined by the poloidal flow, because the contribution of toroidal flow to the radial electric field is small. The jump of radial electric field and poloidal flow are commonly observed near the plasma edge in the so-called high confinement mode (H-mode) plasmas in tokamaks and electron root plasma in stellarators including Heliotrons. In general the toroidal flow is driven by the momentum input from neutral beam injected toroidally. There is toroidal flow not driven by neutral beam in the plasma and it will be more significant in the plasma with large electric field. The direction of these spontaneous toroidal flows depends on the symmetry of magnetic field. The spontaneous toroidal flow driven by the ion temperature gradient is in the direction to increase the negative radial electric field in tokamak. The direction of spontaneous toroidal flow in Heliotron plasmas is opposite to that in tokamak plasma because of the helicity of symmetry of the magnetic field configuration. (author)

  15. Electron Energization and Structure of the Diffusion Region During Asymmetric Reconnection

    Science.gov (United States)

    Chen, Li-Jen; Hesse, Michael; Wang, Shan; Bessho, Naoki; Daughton, William

    2016-01-01

    Results from particle-in-cell simulations of reconnection with asymmetric upstream conditions are reported to elucidate electron energization and structure of the electron diffusion region (EDR). Acceleration of unmagnetized electrons results in discrete structures in the distribution functions and supports the intense current and perpendicular heating in the EDR. The accelerated electrons are cyclotron turned by the reconnected magnetic field to produce the outflow jets, and as such, the acceleration by the reconnection electric field is limited, leading to resistivity without particle-particle or particle-wave collisions. A map of electron distributions is constructed, and its spatial evolution is compared with quantities previously proposed to be EDR identifiers to enable effective identifications of the EDR in terrestrial magnetopause reconnection.

  16. Effects of the reconnection electric field on crescent electron distribution functions in asymmetric guide field reconnection

    Science.gov (United States)

    Bessho, N.; Chen, L. J.; Hesse, M.; Wang, S.

    2017-12-01

    In asymmetric reconnection with a guide field in the Earth's magnetopause, electron motion in the electron diffusion region (EDR) is largely affected by the guide field, the Hall electric field, and the reconnection electric field. The electron motion in the EDR is neither simple gyration around the guide field nor simple meandering motion across the current sheet. The combined meandering motion and gyration has essential effects on particle acceleration by the in-plane Hall electric field (existing only in the magnetospheric side) and the out-of-plane reconnection electric field. We analyze electron motion and crescent-shaped electron distribution functions in the EDR in asymmetric guide field reconnection, and perform 2-D particle-in-cell (PIC) simulations to elucidate the effect of reconnection electric field on electron distribution functions. Recently, we have analytically expressed the acceleration effect due to the reconnection electric field on electron crescent distribution functions in asymmetric reconnection without a guide field (Bessho et al., Phys. Plasmas, 24, 072903, 2017). We extend the theory to asymmetric guide field reconnection, and predict the crescent bulge in distribution functions. Assuming 1D approximation of field variations in the EDR, we derive the time period of oscillatory electron motion (meandering + gyration) in the EDR. The time period is expressed as a hybrid of the meandering period and the gyro period. Due to the guide field, electrons not only oscillate along crescent-shaped trajectories in the velocity plane perpendicular to the antiparallel magnetic fields, but also move along parabolic trajectories in the velocity plane coplanar with magnetic field. The trajectory in the velocity space gradually shifts to the acceleration direction by the reconnection electric field as multiple bounces continue. Due to the guide field, electron distributions for meandering particles are bounded by two paraboloids (or hyperboloids) in the

  17. Electrically and magnetically dual-driven Janus particles for handwriting-enabled electronic paper

    Energy Technology Data Exchange (ETDEWEB)

    Komazaki, Y., E-mail: komazaki@dt.k.u-tokyo.ac.jp; Hirama, H.; Torii, T. [Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Chiba 277-8563 (Japan)

    2015-04-21

    In this work, we describe the synthesis of novel electrically and magnetically dual-driven Janus particles for a handwriting-enabled twisting ball display via the microfluidic technique. One hemisphere of the Janus particles contains a charge control agent, which allows the display color to be controlled by applying a voltage and superparamagnetic nanoparticles, allows handwriting by applying a magnetic field to the display. We fabricated a twisting ball display utilizing these Janus particles and tested the electric color control and handwriting using a magnet. As a result, the display was capable of permitting handwriting with a small magnet in addition to conventional color control using an applied voltage (80 V). Handwriting performance was improved by increasing the concentration of superparamagnetic nanoparticles and was determined to be possible even when 80 V was applied across the electrodes for 4 wt. % superparamagnetic nanoparticles in one hemisphere. This improvement was impossible when the concentration was reduced to 2 wt. % superparamagnetic nanoparticles. The technology presented in our work can be applied to low-cost, lightweight, highly visible, and energy-saving electronic message boards and large whiteboards because the large-size display can be fabricated easily due to its simple structure.

  18. Electrically and magnetically dual-driven Janus particles for handwriting-enabled electronic paper

    International Nuclear Information System (INIS)

    Komazaki, Y.; Hirama, H.; Torii, T.

    2015-01-01

    In this work, we describe the synthesis of novel electrically and magnetically dual-driven Janus particles for a handwriting-enabled twisting ball display via the microfluidic technique. One hemisphere of the Janus particles contains a charge control agent, which allows the display color to be controlled by applying a voltage and superparamagnetic nanoparticles, allows handwriting by applying a magnetic field to the display. We fabricated a twisting ball display utilizing these Janus particles and tested the electric color control and handwriting using a magnet. As a result, the display was capable of permitting handwriting with a small magnet in addition to conventional color control using an applied voltage (80 V). Handwriting performance was improved by increasing the concentration of superparamagnetic nanoparticles and was determined to be possible even when 80 V was applied across the electrodes for 4 wt. % superparamagnetic nanoparticles in one hemisphere. This improvement was impossible when the concentration was reduced to 2 wt. % superparamagnetic nanoparticles. The technology presented in our work can be applied to low-cost, lightweight, highly visible, and energy-saving electronic message boards and large whiteboards because the large-size display can be fabricated easily due to its simple structure

  19. Rf breakdown studies in room temperature electron linac structures

    International Nuclear Information System (INIS)

    Loew, G.A.; Wang, J.W.

    1988-05-01

    This paper is an overall review of studies carried out by the authors and some of their colleagues on RF breakdown, Field Emission and RF processing in room temperature electron linac structure. The motivation behind this work is twofold: in a fundamental way, to contribute to the understanding of the RF breakdown phenomenon, and as an application, to determine the maximum electric field gradient that can be obtained and used safely in future e/sup +-/ linear colliders. Indeed, the next generation of these machines will have to reach into the TeV (10 12 eV) energy range, and the accelerating gradient will be to be of the crucial parameters affecting their design, construction and cost. For a specified total energy, the gradient sets the accelerator length, and once the RF structure, frequency and pulse repetition rate are selected, it also determines the peak and average power consumption. These three quantities are at the heart of the ultimate realizability and cost of these accelerators. 24 refs., 19 figs., 4 tabs

  20. Electronic structure of shandite Co3Sn2S2

    Science.gov (United States)

    Dedkov, Y. S.; Holder, M.; Molodtsov, S. L.; Rosner, H.

    2008-03-01

    The electronic structure of shandite Co3Sn2S2 was determined by photoelectron spectroscopy and compared with ab initio band structure calculations. Presented results give evidence that this compound has half-metallic ferromagnetic properties.

  1. Electronic conductance of quantum wire with serial periodic potential structures

    International Nuclear Information System (INIS)

    Fayad, Hisham M.; Shabat, Mohammed M.; Abdus Salam International Centre for Theoretical Physics, Trieste

    2000-08-01

    A theory based on the total transfer matrix is presented to investigate the electronic conductance in a quantum wire with serial periodic potentials. We apply the formalism in computation of the electronic conductance in a wire with different physical parameters of the wire structure. The numerical results could be used in designing some future quantum electronic devices. (author)

  2. Influence of time-periodic potentials on electronic transport in double-well structure

    International Nuclear Information System (INIS)

    Chun-Lei, Li; Yan, Xu

    2010-01-01

    Within the framework of the Floquet theorem, we have investigated single-electron photon-assisted tunneling in a double-well system using the transfer matrix technique. The transmission probability displays satellite peaks on both sides of the main resonance peaks and these satellite peaks originate from emission or absorption photons. The single-electron resonance tunneling can be controlled through changing the applied harmonically potential positions, such as driven potential in wells, in barriers, or in whole double-well systems. This advantage should be useful in the optimization of the parameters of a transmission device. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  3. Calibrating MMS Electron Drift Instrument (EDI) Ambient Electron Flux Measurements and Characterizing 3D Electric Field Signatures of Magnetic Reconnection

    Science.gov (United States)

    Shuster, J. R.; Torbert, R. B.; Vaith, H.; Argall, M. R.; Li, G.; Chen, L. J.; Ergun, R. E.; Lindqvist, P. A.; Marklund, G. T.; Khotyaintsev, Y. V.; Russell, C. T.; Magnes, W.; Le Contel, O.; Pollock, C. J.; Giles, B. L.

    2015-12-01

    The electron drift instruments (EDIs) onboard each MMS spacecraft are designed with large geometric factors (~0.01cm2 str) to facilitate detection of weak (~100 nA) electron beams fired and received by the two gun-detector units (GDUs) when EDI is in its "electric field mode" to determine the local electric and magnetic fields. A consequence of the large geometric factor is that "ambient mode" electron flux measurements (500 eV electrons having 0°, 90°, or 180° pitch angle) can vary depending on the orientation of the EDI instrument with respect to the magnetic field, a nonphysical effect that requires a correction. Here, we present determinations of the θ- and ø-dependent correction factors for the eight EDI GDUs, where θ (ø) is the polar (azimuthal) angle between the GDU symmetry axis and the local magnetic field direction, and compare the corrected fluxes with those measured by the fast plasma instrument (FPI). Using these corrected, high time resolution (~1,000 samples per second) ambient electron fluxes, combined with the unprecedentedly high resolution 3D electric field measurements taken by the spin-plane and axial double probes (SDP and ADP), we are equipped to accurately detect electron-scale current layers and electric field waves associated with the non-Maxwellian (anisotropic and agyrotropic) particle distribution functions predicted to exist in the reconnection diffusion region. We compare initial observations of the diffusion region with distributions and wave analysis from PIC simulations of asymmetric reconnection applicable for modeling reconnection at the Earth's magnetopause, where MMS will begin Science Phase 1 as of September 1, 2015.

  4. Quantum Effects of Electric Fields and Potentials on Electron Motion: An Introduction to Theoretical and Practical Aspects

    Science.gov (United States)

    Matteucci, G.

    2007-01-01

    In the so-called electric Aharonov-Bohm effect, a quantum interference pattern shift is produced when electrons move in an electric field free region but, at the same time, in the presence of a time-dependent electric potential. Analogous fringe shifts are observed in interference experiments where electrons, travelling through an electrostatic…

  5. Electricity supply industry. Structure, ownership and regulation in OECD countries

    International Nuclear Information System (INIS)

    1994-01-01

    This study surveys developments and implications in the electricity supply industries in OECD countries. Chapter 1 introduces the issues. (Competition or electricity supply for everybody?) Electricity markets are dynamic and the participants are restructuring and repositioning themselves in order to benefit from new opportunities or policy initiatives. These changes are described in chapter 2. Privatisation is being pursued by some governments, not only for reasons of economic efficiency. Arguments for and against privatisation and different ways of introducing it are discussed in chapter 3. Fair trade and competition legislation, as it applies to all corporate entities, creates the institutional framework within which the utility has to operate. Various approaches to regulation and recent developments are described in chapter 4; the implications of regulatory changes are analysed in chapter 5. Having surveyed recent developments and their direct consequences, this study then goes on to look at their broader implications for the achievement of a range of energy policy objectives. Chapter 6 looks at fuel choice and investment decisions. Chapter 7 considers the issue of security of electricity supply, which has many special characteristics for both suppliers and regulators. OECD countries use different approaches for ensuring security of supply. Chapter 8 looks at environmental protection. Chapter 9 looks at energy efficiency. Chapter 10 discusses pricing. The introduction of competition has significant effects: it tends to reduce costs, remove cross subsidies, and bring prices more closely in line with the structure of costs. But there is no clear evidence at this stage as to whether, in the long run, competition produces lower overall prices. Finally chapter 11 analyses risk. The electricity business, like every other business, is faced with a variety of risks that cover every financial and technical facet of electricity production, transport, and supply. (N.C.)

  6. Review of material recovery from used electric and electronic equipment-alternative options for resource conservation.

    Science.gov (United States)

    Friege, Henning

    2012-09-01

    For waste from electric and electronic equipment, the WEEE Directive stipulates the separate collection of electric and electronic waste. As to new electric and electronic devices, the Restriction of Hazardous Substances (RoHS) Directive bans the use of certain chemicals dangerous for man and environment. From the implementation of the WEEE directive, many unsolved problems have been documented: poor collection success, emission of dangerous substances during collection and recycling, irretrievable loss of valuable metals among others. As to RoHS, data from the literature show a satisfying success. The problems identified in the process can be reduced to some basic dilemmas at the borders between waste management, product policy and chemical safety. The objectives of the WEEE Directive and the specific targets for use and recycling of appliances are not consistent. There is no focus on scarce resources. Extended producer responsibility is not sufficient to guarantee sustainable waste management. Waste management reaches its limits due to problems of implementation but also due to physical laws. A holistic approach is necessary looking at all branch points and sinks in the stream of used products and waste from electric and electronic equipment. This may be done with respect to the general rules for sustainable management of material streams covering the three dimensions of sustainable policy. The relationships between the players in the field of electric and electronic devices have to be taken into account. Most of the problems identified in the implementation process will not be solved by the current amendment of the WEEE Directive.

  7. Nitrogen-doping effects on the growth, structure and electrical performance of carbon nanotubes obtained by spray pyrolysis method

    Energy Technology Data Exchange (ETDEWEB)

    Ionescu, Mihnea Ioan; Zhang Yong; Li Ruying [Department of Mechanical and Materials Engineering, University of Western Ontario, London, ON N6A 5B9 (Canada); Abou-Rachid, Hakima [Defense Research and Development Canada - Valcartier, 2459 Boulevard PieXI Nord, Quebec, QC G3J 1X5 (Canada); Sun Xueliang, E-mail: xsun@eng.uwo.ca [Department of Mechanical and Materials Engineering, University of Western Ontario, London, ON N6A 5B9 (Canada)

    2012-03-01

    Vertically aligned nitrogen-doped carbon nanotubes (CNTs) with modulated nitrogen content have been synthesized in a large scale by using spray pyrolysis chemical vapor deposition technique. The effects of nitrogen doping on the growth, structure and electrical performance of carbon nanotubes have been systematically examined. Field emission scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, and Raman techniques have been employed to characterize the morphology, composition, and vibrational properties of nanotubes. The results indicate that the nitrogen incorporation significantly influences the growth rate, morphology, size and structure of nanotubes. Electrical measurement investigation of the nanotubes indicates that the change in electrical resistance increases with temperature and pressure as the nitrogen concentration increases inside the tubes. This work presents a versatile, safe, and easy way to scale up route of growing carbon nanotubes with controlled nitrogen content and modulated structure, and may provide an insight in developing various nitrogen-doped carbon-based nanodevices.

  8. Electron and muon electric dipoles in supersymmetric scenarios

    CERN Document Server

    Romanino, Andrea; Romanino, Andrea; Strumia, Alessandro

    2002-01-01

    We study if a sizeable muon electric dipole can arise in supersymmetric frameworks able to account for the tight experimental bounds on sfermion masses, like an appropriate flavor symmetry, or like a flavor-blind mechanism of SUSY breaking (in presence of radiative corrections charchteristic of GUT models, or due to Yukawa couplings of neutrinos in see-saw models). In some cases it is possible to evade the naive scaling d_mu/d_e = m_mu/m_e and obtain a d_mu as large as 10^{-22--23} e cm. In most cases d_mu is around 10^{-24--25} e cm and (d_mu/d_e)/(m_mu/m_e) is only slightly different from one: this ratio contains interesting informations on the source of the dipoles and on the texture of the lepton Yukawa matrix. We also update GUT predictions for mu --> e gamma and related processes.

  9. The influence of residents' behaviour on waste electrical and electronic equipment collection effectiveness.

    Science.gov (United States)

    Nowakowski, Piotr

    2016-11-01

    Government agencies have implemented regulations to reduce the volume of waste electrical and electronic equipment to protect the environment and encourage recycling. The effectiveness of systems through which waste electrical and electronic equipment is collected and recycled depends on (a) the development and operation of new programmes to process this material and (b) on information dissemination programmes aimed at manufacturers, retail sellers, and the consuming public. This study analyses these two elements. The main focus is to better understand household residents' behaviour in regards to the proper methods of handling waste electrical and electronic equipment and possible storage of the obsolete equipment that brings disturbances with collection of the waste equipment. The study explores these issues depending on size of municipality and the household residents' knowledge about legal methods of post-consumer management of waste electrical and electronic equipment in Poland, where the collection rate of that type of waste is about 40% of the total mass of waste electrical and electronic equipment appearing in the market.The research was informed by various sources of information, including non-government organisations, Inspectorate of Environmental Protection and Central Statistics Office in Poland, questionnaires, and interviews with the household residents. The questionnaires were distributed to daytime and vocational students from different universities and the customers of an electronic equipment superstore. The results show that a resident's behaviour in regards to the handling of obsolete waste electrical and electronic equipment can significantly reduce the collection rate, especially when the waste is discarded improperly - mixed with municipal waste or sold in scrapyards. It is possible to identify points that are necessary to be improved to achieve a higher collection rate. © The Author(s) 2016.

  10. Structure of liquid alkali metals as electron-ion plasmas

    International Nuclear Information System (INIS)

    Chaturvedi, D.K.; Senatore, G.; Tosi, M.P.

    1980-08-01

    The static structure factor of liquid alkali metals near freezing, and its dependence on temperature and pressure, are evaluated in an electron-ion plasma model from an accurate theoretical determination of the structure factor of the one-component classical plasma and electron-screening theory. Very good agreement is obtained with the available experimental data. (author)

  11. On electronic structure of polymer-derived amorphous silicon carbide ceramics

    Science.gov (United States)

    Wang, Kewei; Li, Xuqin; Ma, Baisheng; Wang, Yiguang; Zhang, Ligong; An, Linan

    2014-06-01

    The electronic structure of polymer-derived amorphous silicon carbide ceramics was studied by combining measurements of temperature-dependent conductivity and optical absorption. By comparing the experimental results to theoretical models, electronic structure was constructed for a carbon-rich amorphous silicon carbide, which revealed several unique features, such as deep defect energy level, wide band-tail band, and overlap between the band-tail band and defect level. These unique features were discussed in terms of the microstructure of the material and used to explain the electric behavior.

  12. Electronic structure of Mo and W investigated with positron annihilation

    Energy Technology Data Exchange (ETDEWEB)

    Dutschke, Markus [Theoretical Physics III, Center for Electronic Correlations and Magnetism, Institute of Physics, University of Augsburg (Germany); Sekania, Michael [Theoretical Physics III, Center for Electronic Correlations and Magnetism, Institute of Physics, University of Augsburg (Germany); Andronikashvili Institute of Physics, Tbilisi (Georgia); Benea, Diana [Faculty of Physics, Babes-Bolyai University, Cluj-Napoca (Romania); Department of Chemistry, Ludwig Maximilian University of Munich (Germany); Ceeh, Hubert; Weber, Joseph A.; Hugenschmidt, Christoph [FRM II, Technische Universitaet Muenchen, Garching (Germany); Chioncel, Liviu [Theoretical Physics III, Center for Electronic Correlations and Magnetism, Institute of Physics, University of Augsburg (Germany); Augsburg Center for Innovative Technologies, University of Augsburg (Germany)

    2016-07-01

    We perform electronic structure calculations to analyze the momentum distribution of the transition metals molybdenum and tungsten. We study the influence of positron-electron and the electron-electron interactions on the shape of the two-dimensional angular correlation of positron annihilation radiation (2D-ACAR) spectra. Our analysis is performed within the framework of the combined Density Functional (DFT) and Dynamical Mean-Field Theory (DMFT). Computed spectra are compared with recent experimental investigations.

  13. Electronic structures of elements according to ionization energies.

    Science.gov (United States)

    Zadeh, Dariush H

    2017-11-28

    The electronic structures of elements in the periodic table were analyzed using available experimental ionization energies. Two new parameters were defined to carry out the study. The first parameter-apparent nuclear charge (ANC)-quantified the overall charge of the nucleus and inner electrons observed by an outer electron during the ionization process. This parameter was utilized to define a second parameter, which presented the shielding ability of an electron against the nuclear charge. This second parameter-electron shielding effect (ESE)-provided an insight into the electronic structure of atoms. This article avoids any sort of approximation, interpolation or extrapolation. First experimental ionization energies were used to obtain the two aforementioned parameters. The second parameter (ESE) was then graphed against the electron number of each element, and was used to read the corresponding electronic structure. The ESE showed spikes/peaks at the end of each electronic shell, providing insight into when an electronic shell closes and a new one starts. The electronic structures of elements in the periodic table were mapped using this methodology. These graphs did not show complete agreement with the previously known "Aufbau" filling rule. A new filling rule was suggested based on the present observations. Finally, a new way to organize elements in the periodic table is suggested. Two earlier topics of effective nuclear charge, and shielding factor were also briefly discussed and compared numerically to demonstrate the capability of the new approach.

  14. Correct Brillouin zone and electronic structure of BiPd

    Science.gov (United States)

    Yaresko, Alexander; Schnyder, Andreas P.; Benia, Hadj M.; Yim, Chi-Ming; Levy, Giorgio; Damascelli, Andrea; Ast, Christian R.; Peets, Darren C.; Wahl, Peter

    2018-02-01

    A promising route to the realization of Majorana fermions is in noncentrosymmetric superconductors, in which spin-orbit coupling lifts the spin degeneracy of both bulk and surface bands. A detailed assessment of the electronic structure is critical to evaluate their suitability for this through establishing the topological properties of the electronic structure. This requires correct identification of the time-reversal-invariant momenta. One such material is BiPd, a recently rediscovered noncentrosymmetric superconductor which can be grown in large, high-quality single crystals and has been studied by several groups using angular resolved photoemission to establish its surface electronic structure. Many of the published electronic structure studies on this material are based on a reciprocal unit cell which is not the actual Brillouin zone of the material. We show here the consequences of this for the electronic structures and show how the inferred topological nature of the material is affected.

  15. Power-Electronics Issues of Modern Electric Railway Systems

    Directory of Open Access Journals (Sweden)

    STEIMEL, A.

    2010-05-01

    Full Text Available After de-regulation of the former state-owned railways and severe restructuring of the railway industry in the last 15 years, more innovative vehicle concepts saw the light of the day. Power electronics, already formerly being a pacemaker for progress of traction vehicles, brought forth an utmost standardization of the main drive by means of the IGBT-converter-fed induction motor drive. This is independent of the railway supply voltage system or of a diesel prime mover, for locomotives, high-speed and mass-transit trains as well as for tramways. Vehicles able to operate on all four European railway voltage systems have become feasible and are used now widely. New trends as Permanent-Magnet Synchronous Motors or Medium-Frequency Transformers are discussed, and a short overlook over actual field-oriented high-performance motor control systems - including a speed-sensorless variant - is given. Power electronics dominates the field of conversion of the 16.7-Hz railway supply power, typical for Central Europe, from the 50-Hz three-phase utility grid.

  16. XI Scientific Conference Selected Issues of Electrical Engineering and Electronics (WZEE)

    CERN Document Server

    Mazur, Damian; Analysis and Simulation of Electrical and Computer Systems

    2015-01-01

    This book presents the selected results of the XI Scientific Conference Selected Issues of Electrical Engineering and Electronics (WZEE) which was held in Rzeszów and Czarna, Poland on September 27-30, 2013. The main aim of the Conference was to provide academia and industry to discuss and present the latest technological advantages and research results and to integrate the new interdisciplinary scientific circle in the field of electrical engineering, electronics and mechatronics. The Conference was organized by the Rzeszów Division of Polish Association of Theoretical and Applied Electrical Engineering (PTETiS) in cooperation with Rzeszów University of Technology, the Faculty of Electrical and Computer Engineering and Rzeszów University, the Faculty of Mathematics and Natural Sciences.  

  17. Demolition of RC structures by applying electric current through rebars

    International Nuclear Information System (INIS)

    Nakagawa, Wahei; Nishita, Itaru; Kasai, Yoshio.

    1987-01-01

    Recently, the dismantling works of reinforced concrete structures increased rapidly. On the other hand, in urban districts, the strict restriction of noise, vibration and dust is carried out, and the development of no vibration, no noise construction method is desired. The dismantling method by electrically heating reinforcing bars was developed for separating the surface layer of concrete radioactivated and contaminated in the dismantling works of nuclear power stations, but it can be applied also to the dismantling of general reinforced concrete structures. As the method of electrically heating reinforcing bars, there are direct electrifying method and induction heating method, and here, the direct electrifying method is discussed. When large current is passed directly through reinforcing bars in concrete as electric resistors, their temperature rises rapidly to about 450 deg C. As the result, the surrounding concrete cracks and loses the adhesion due to the dehydration. By striking lightly, the concrete separates, thus dismantling becomes easy. The preparation, electrode terminals, heating temperature, the cracking of concrete, the secondary breaking after heating, dust in dismantling and broken pieces, and the features and the fields of application of this method are reported. (Kako, I.)

  18. Electronic structure of hybrid interfaces for polymer-based electronics

    International Nuclear Information System (INIS)

    Fahlman, M; Crispin, A; Crispin, X; Henze, S K M; Jong, M P de; Osikowicz, W; Tengstedt, C; Salaneck, W R

    2007-01-01

    The fundamentals of the energy level alignment at anode and cathode electrodes in organic electronics are described. We focus on two different models that treat weakly interacting organic/metal (and organic/organic) interfaces: the induced density of interfacial states model and the so-called integer charge transfer model. The two models are compared and evaluated, mainly using photoelectron spectroscopy data of the energy level alignment of conjugated polymers and molecules at various organic/metal and organic/organic interfaces. We show that two different alignment regimes are generally observed: (i) vacuum level alignment, which corresponds to the lack of vacuum level offsets (Schottky-Mott limit) and hence the lack of charge transfer across the interface, and (ii) Fermi level pinning where the resulting work function of an organic/metal and organic/organic bilayer is independent of the substrate work function and an interface dipole is formed due to charge transfer across the interface. We argue that the experimental results are best described by the integer charge transfer model which predicts the vacuum level alignment when the substrate work function is above the positive charge transfer level and below the negative charge transfer level of the conjugated material. The model further predicts Fermi level pinning to the positive (negative) charge transfer level when the substrate work function is below (above) the positive (negative) charge transfer level. The nature of the integer charge transfer levels depend on the materials system: for conjugated large molecules and polymers, the integer charge transfer states are polarons or bipolarons; for small molecules' highest occupied and lowest unoccupied molecular orbitals and for crystalline systems, the relevant levels are the valence and conduction band edges. Finally, limits and further improvements to the integer charge transfer model are discussed as well as the impact on device design. (topical review)

  19. The electronic structure of core states under extreme compressions

    International Nuclear Information System (INIS)

    Straub, G.K.

    1992-01-01

    At normal density and for modest compressions, the electronic structure of a metal can be accurately described by treating the conduction electrons and their interactions with the usual methods of band theory. The core electrons remain essentially the same as for an isolated free atom and do not participate in the bonding forces responsible for creating a condensed phase. As the density increases, the core electrons begin to ''see'' one another as the overlap of the tails of wave functions can no longer be neglected. The electronic structure of the core electrons is responsible for an effective repulsive interaction that eventually becomes free-electron-like at very high compressions. The electronic structure of the interacting core electrons may be treated in a simple manner using the Atomic Surface Method (ASM). The ASM is a first-principles treatment of the electronic structure involving a rigorous integration of the Schroedinger equation within the atomic-sphere approximation. Solid phase wave functions are constructed from isolated atom wave functions and the band width W l and the center of gravity of the band C l are obtained from simple formulas. The ASM can also utilize analytic forms of the atomic wave functions and thus provide direct functional dependence of various aspects of the electronic structure. Of particular use in understanding the behavior of the core electrons, the ASM provides the ability to analytically determine the density dependence of the band widths and positions. The process whereby core states interact with one another is best viewed as the formation of narrow electron bands formed from atomic states. As the core-core overlap increases, the bands increase in width and mean energy. In Sec.3 this picture is further developed and from the ASM one obtains the analytic dependence on density of the relative motion of the different bands. Also in Sec. 3 is a discussion of the transition to free electron bands

  20. Zeeman interaction in the Δ31 state of HfF+ to search for the electron electric dipole moment

    Science.gov (United States)

    Petrov, A. N.; Skripnikov, L. V.; Titov, A. V.

    2017-08-01

    A theoretical study devoted to suppression of magnetic systematic effects in HfF+ cation for an experiment to search for the electron electric dipole moment is reported. The g factors for J =1 , F =3 /2 , | MF|=3 /2 hyperfine levels of the Δ31 state are calculated as functions of the external electric field. The minimal value for the difference between the g factors of Ω -doublet levels, Δ g =3 ×10-6 , is attained at the electric field 7 V/cm. The body-fixed g factor, G∥, was obtained both within the ab initio electronic structure calculations and with our fit of the experimental data [H. Loh, K. C. Cossel, M. C. Grau, K.-K. Ni, E. R. Meyer, J. L. Bohn, J. Ye, and E. A. Cornell, Science 342, 1220 (2013), 10.1126/science.1243683]. For the electronic structure calculations we used a combined scheme to perform correlation calculations of HfF+, which includes both the direct four-component all-electron and generalized relativistic effective core potential approaches. The electron correlation effects were treated using the coupled cluster methods. The calculated value G∥=0.0115 agrees very well with the G∥=0.0118 obtained with our fitting procedure. The calculated ab initio value D∥=-1.53 a.u. for the molecule-frame dipole moment (with the origin in the center of mass) is in agreement with the experimental datum D∥=-1.54 (1 ) a.u. [H. Loh, Ph.D. thesis, Massachusetts Institute of Technology, 2006.].

  1. Engineering Design Handbook. Dielectric Embedding of Electrical or Electronic Components

    Science.gov (United States)

    1979-04-06

    masterbatch in order to get good dispersion and good color matches. Red iron oxide is used as a color pigment and as a heat aging additive. Two to four...SAN. The two agents can be used in combination to control cell structure. Both should be added in masterbatch form, al- though UNICEL ND disperses

  2. All-electron study of ultra-incompressible superhard material ReB2: structural and electronic properties

    International Nuclear Information System (INIS)

    Yan-Ling, Li; Guo-Hua, Zhong; Zhi, Zeng

    2009-01-01

    This paper investigates the structural and electronic properties of rhenium diboride by first-principles calculation based on density functional theory. The obtained results show that the calculated equilibrium structural parameters of ReB 2 are in excellent agreement with experimental values. The calculated bulk modulus is 361 GPa in comparison with that of the experiment. The compressibility of ReB 2 is lower than that of well-known OsB 2 . The anisotropy of the bulk modulus is confirmed by c/a ratio as a function of pressure curve and the bulk modulus along different axes along with the electron density distribution. The high bulk modulus is attributed to the strong covalent bond between Re-d and B-p orbitals and the wider pseudogap near the Fermi level, which could be deduced from both electron charge density distribution and density of states. The band structure and density of states of ReB 2 exhibit that this material presents metallic behavior. The good metallicity and ultra-incompressibility of ReB 2 might suggest its potential application as pressure-proof conductors. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  3. Synthesis and electrical properties of silver nanoplates for electronic applications

    Directory of Open Access Journals (Sweden)

    Xiong Nana

    2015-06-01

    Full Text Available In this paper, silver nanoplates of 100 to 500 nm size were synthesized by reduction of silver nitrate with N,Ndimethylformamide, using poly(vinylpyrolidone as a surfactant and ferric chloride as a controlling agent, at 120 to 160 °C for 5 to 24 hours. The influence of the concentration of ferric chloride, the reaction temperature and reaction time on the morphology of the product has been investigated by transmission electron microscopy, scanning electron microscopy and UV-Vis spectroscopy. The results indicated that the products obtained at the low reaction temperature and short reaction time in the presence of FeCl3 in the reaction solution were in the form of silver nanoplates, whose morphology was mainly triangular and hexagonal. In addition, the size and thickness of the nanoplates increased with increasing of the FeCl3 concentration. At a high reaction temperature and long reaction time, the truncated triangle and hexagonal nanoplates were mainly produced. Furthermore, the sintering behavior of nanoplates was studied and the results showed that sintering of the silver nanoplates started at 180 °C, and a typical sintering behavior was observed at higher temperatures. The incorporation of the silver nanoplates into the polymer matrix with micro-sized silver flakes led to an increase in the matrix resistivity in almost all cases, especially at high fractions and low curing temperatures. The curing temperature had an influence on the resistivity of the conductive adhesives filled with micro-sized silver flakes and silver nanoplates due to sintering of the silver nanoplates.

  4. Electron beam induced modifications in flexible biaxially oriented polyethylene terephthalate sheets: Improved mechanical and electrical properties

    Energy Technology Data Exchange (ETDEWEB)

    Chaudhary, N. [Accelerator & Pulse Power Division, Bhabha Atomic Research Centre, Mumbai, 400 085 (India); Koiry, S.P. [Technical Physics Division, Bhabha Atomic Research Centre, Mumbai, 400 085 (India); Singh, A., E-mail: asb_barc@yahoo.com [Technical Physics Division, Bhabha Atomic Research Centre, Mumbai, 400 085 (India); Tillu, A.R. [Accelerator & Pulse Power Division, Bhabha Atomic Research Centre, Mumbai, 400 085 (India); Jha, P.; Samanta, S.; Debnath, A.K. [Technical Physics Division, Bhabha Atomic Research Centre, Mumbai, 400 085 (India); Aswal, D.K., E-mail: dkaswal@yahoo.com [Technical Physics Division, Bhabha Atomic Research Centre, Mumbai, 400 085 (India); Mondal, R.K. [Radiation Technology Development Division, Bhabha Atomic Research Centre, Mumbai, 400 085 (India); Acharya, S.; Mittal, K.C. [Accelerator & Pulse Power Division, Bhabha Atomic Research Centre, Mumbai, 400 085 (India)

    2017-03-01

    In the present work, we have studied the effects of electron beam irradiation (with dose ranging from 2 to 32 kGy) on mechanical and electrical properties of biaxially oriented polyethylene terephthalate (BOPET) sheets. The sol-gel analysis, Fourier transformation infra-red (FTIR), X-ray photoelectron spectroscopy (XPS) characterizations of the irradiated BOPET sheets suggest partial cross-linking of PET chains through the diethylene glycol (DEG). The mechanical properties of BOPET, such as, tensile strength, Young's modulus and electrical resistivity shows improvement with increasing dose and saturate for doses >10 kGy. The improved mechanical properties and high electrical resistivity of electron beam modified BOPET sheets may have additional advantages in applications, such as, packaging materials for food irradiation, medical product sterilization and electronic industries. - Graphical abstract: Irradiation of BOPET by electron beam leads to the formation of diethylene glycol that crosslink's the PET chains, resulting in improved mechanical properties and enhanced electrical resistivity. - Highlights: • BOPET exhibit improved tensile strength/Young's modulus after e-beam exposure. • Electrical resistivity of BOPET increases after e-beam exposure. • Cross-linking of PET chains through diethylene glycol was observed after e-beam exposure.

  5. Crystal structure from one-electron theory

    DEFF Research Database (Denmark)

    Skriver, H. L.

    1985-01-01

    The authors have studied the crystal structure of all the 3d, 4d, and 5d transition metals at zero pressure and temperature by means of the linear muffin-tin orbital method and Andersen's force theorem. They find that, although the structural energy differences seem to be overestimated by the the......The authors have studied the crystal structure of all the 3d, 4d, and 5d transition metals at zero pressure and temperature by means of the linear muffin-tin orbital method and Andersen's force theorem. They find that, although the structural energy differences seem to be overestimated...

  6. FY2011 Advanced Power Electronics and Electric Motors Annual Progress Report

    Energy Technology Data Exchange (ETDEWEB)

    Rogers, Susan A. [Office of Energy Efficiency and Renewable Energy (EERE), Washington, DC (United States)

    2012-01-31

    The Advanced Power Electronics and Electric Motors (APEEM) program within the DOE Vehicle Technologies Program (VTP) provides support and guidance for many cutting-edge automotive technologies now under development. Research is focused on developing revolutionary new power electronics (PE), electric motor (EM), thermal management, and traction drive system technologies that will leapfrog current on-the-road technologies. The research and development (R&D) is also aimed at achieving a greater understanding of and improvements in the way the various new components of tomorrow’s automobiles will function as a unified system to improve fuel efficiency.

  7. FY2010 Annual Progress Report for Advanced Power Electronics and Electric Motors

    Energy Technology Data Exchange (ETDEWEB)

    Rogers, Susan A. [Office of Energy Efficiency and Renewable Energy (EERE), Washington, DC (United States)

    2011-01-01

    The Advanced Power Electronics and Electric Machines (APEEM) subprogram within the Vehicle Technologies Program provides support and guidance for many cutting-edge automotive technologies now under development. Research is focused on developing revolutionary new power electronics (PE) and electric motor technologies that will leapfrog current on-the-road technologies. The research and development (R&D) is also aimed at achieving a greater understanding of and improvements in the way the various new components of tomorrow’s automobiles will function as a unified system to improve fuel efficiency.

  8. Investigation by perturbative and analytical method of electronic properties of square quantum well under electric field

    Directory of Open Access Journals (Sweden)

    Mustafa Kemal BAHAR

    2010-06-01

    Full Text Available In this study, the effects of applied electric field on the isolated square quantum well was investigated by analytic and perturbative method. The energy eigen values and wave functions in quantum well were found by perturbative method. Later, the electric field effects were investigated by analytic method, the results of perturbative and analytic method were compared. As well as both of results fit with each other, it was observed that externally applied electric field changed importantly electronic properties of the system.

  9. Theoretical study of structure of electric field in helical toroidal plasmas

    International Nuclear Information System (INIS)

    Toda, S.; Itoh, K.

    2001-06-01

    A set of transport equations is analyzed, including the bifurcation of the electric field. The structure of the electric field is studied by use of the theoretical model for the anomalous transport diffusivities. The steep gradient of the electric field is obtained at the electric domain. The suppression of the anomalous transport diffusivity is studied in the presence of the strong shear of the electric field. The hard transition with the multiple ambipolar solutions is examined in the structure of the radial electric field. The details of the structure of the electric domain interface are investigated. (author)

  10. Optical and Electrical Properties of Tin-Doped Cadmium Oxide Films Prepared by Electron Beam Technique

    Science.gov (United States)

    Ali, H. M.; Mohamed, H. A.; Wakkad, M. M.; Hasaneen, M. F.

    2009-04-01

    Tin-doped cadmium oxide films were deposited by electron beam evaporation technique. The structural, optical and electrical properties of the films were characterized. The X-ray diffraction (XRD) study reveals that the films are polycrystalline in nature. As composition and structure change due to the dopant ratio and annealing temperature, the carrier concentration was varied around 1020 cm-3, and the mobility increased from less than 10 to 45 cm2 V-1 s-1. A transmittance value of ˜83% and a resistivity value of 4.4 ×10-4 Ω cm were achieved for (CdO)0.88(SnO2)0.12 film annealed at 350 °C for 15 min., whereas the maximum value of transmittance ˜93% and a resistivity value of 2.4 ×10-3 Ω cm were obtained at 350 °C for 30 min. The films exhibited direct band-to-band transitions, which corresponded to optical band gaps of 3.1-3.3 eV.

  11. Removal of brominated flame retardant from electrical and electronic waste plastic by solvothermal technique

    International Nuclear Information System (INIS)

    Zhang, Cong-Cong; Zhang, Fu-Shen

    2012-01-01

    Highlights: ► A process for brominated flame retardants (BFRs) removal in plastic was established. ► The plastic became bromine-free with the structure maintained after this treatment. ► BFRs transferred into alcohol solvent were easily debrominated by metallic copper. - Abstract: Brominated flame retardants (BFRs) in electrical and electronic (E and E) waste plastic are toxic, bioaccumulative and recalcitrant. In the present study, tetrabromobisphenol A (TBBPA) contained in this type of plastic was tentatively subjected to solvothermal treatment so as to obtain bromine-free plastic. Methanol, ethanol and isopropanol were examined as solvents for solvothermal treatment and it was found that methanol was the optimal solvent for TBBPA removal. The optimum temperature, time and liquid to solid ratio for solvothermal treatment to remove TBBPA were 90 °C, 2 h and 15:1, respectively. After the treatment with various alcohol solvents, it was found that TBBPA was finally transferred into the solvents and bromine in the extract was debrominated catalyzed by metallic copper. Bisphenol A and cuprous bromide were the main products after debromination. The morphology and FTIR properties of the plastic were generally unchanged after the solvothermal treatment indicating that the structure of the plastic maintained after the process. This work provides a clean and applicable process for BFRs-containing plastic disposal.

  12. Removal of brominated flame retardant from electrical and electronic waste plastic by solvothermal technique

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Cong-Cong [Research Center For Eco-Environmental Sciences, Chinese Academy of Sciences, 18 Shuangqing Road, Beijing 100085 (China); Zhang, Fu-Shen, E-mail: fszhang@rcees.ac.cn [Research Center For Eco-Environmental Sciences, Chinese Academy of Sciences, 18 Shuangqing Road, Beijing 100085 (China)

    2012-06-30

    Highlights: Black-Right-Pointing-Pointer A process for brominated flame retardants (BFRs) removal in plastic was established. Black-Right-Pointing-Pointer The plastic became bromine-free with the structure maintained after this treatment. Black-Right-Pointing-Pointer BFRs transferred into alcohol solvent were easily debrominated by metallic copper. - Abstract: Brominated flame retardants (BFRs) in electrical and electronic (E and E) waste plastic are toxic, bioaccumulative and recalcitrant. In the present study, tetrabromobisphenol A (TBBPA) contained in this type of plastic was tentatively subjected to solvothermal treatment so as to obtain bromine-free plastic. Methanol, ethanol and isopropanol were examined as solvents for solvothermal treatment and it was found that methanol was the optimal solvent for TBBPA removal. The optimum temperature, time and liquid to solid ratio for solvothermal treatment to remove TBBPA were 90 Degree-Sign C, 2 h and 15:1, respectively. After the treatment with various alcohol solvents, it was found that TBBPA was finally transferred into the solvents and bromine in the extract was debrominated catalyzed by metallic copper. Bisphenol A and cuprous bromide were the main products after debromination. The morphology and FTIR properties of the plastic were generally unchanged after the solvothermal treatment indicating that the structure of the plastic maintained after the process. This work provides a clean and applicable process for BFRs-containing plastic disposal.

  13. Manganites in Perovskite Superlattices: Structural and Electronic Properties

    KAUST Repository

    Jilili, Jiwuer

    2016-07-13

    Perovskite oxides have the general chemical formula ABO3, where A is a rare-earth or alkali-metal cation and B is a transition metal cation. Perovskite oxides can be formed with a variety of constituent elements and exhibit a wide range of properties ranging from insulators, metals to even superconductors. With the development of growth and characterization techniques, more information on their physical and chemical properties has been revealed, which diversified their technological applications. Perovskite manganites are widely investigated compounds due to the discovery of the colossal magnetoresistance effect in 1994. They have a broad range of structural, electronic, magnetic properties and potential device applications in sensors and spintronics. There is not only the technological importance but also the need to understand the fundamental mechanisms of the unusual magnetic and transport properties that drive enormous attention. Manganites combined with other perovskite oxides are gaining interest due to novel properties especially at the interface, such as interfacial ferromagnetism, exchange bias, interfacial conductivity. Doped manganites exhibit diverse electrical properties as compared to the parent compounds. For instance, hole doped La0.7Sr0.3MnO3 is a ferromagnetic metal, whereas LaMnO3 is an antiferromagnetic insulator. Since manganites are strongly correlated systems, heterojunctions composed of manganites and other perovskite oxides are sunject to complex coupling of the spin, orbit, charge, and lattice degrees of freedom and exhibit unique electronic, magnetic, and transport properties. Electronic reconstructions, O defects, doping, intersite disorder, magnetic proximity, magnetic exchange, and polar catastrophe are some effects to explain these interfacial phenomena. In our work we use first-principles calculations to study the structural, electronic, and magnetic properties of manganite based superlattices. Firstly, we investigate the electronic

  14. Indium antimonide quantum well structures for electronic device applications

    Science.gov (United States)

    Edirisooriya, Madhavie

    The electron effective mass is smaller in InSb than in any other III-V semiconductor. Since the electron mobility depends inversely on the effective mass, InSb-based devices are attractive for field effect transistors, magnetic field sensors, ballistic transport devices, and other applications where the performance depends on a high mobility or a long mean free path. In addition, electrons in InSb have a large g-factor and strong spin orbit coupling, which makes them well suited for certain spin transport devices. The first n-channel InSb high electron mobility transistor (HEMT) was produced in 2005 with a power-delay product superior to HEMTs with a channel made from any other III-V semiconductor. The high electron mobility in the InSb quantum-well channel increases the switching speed and lowers the required supply voltage. This dissertation focuses on several materials challenges that can further increase the appeal of InSb quantum wells for transistors and other electronic device applications. First, the electron mobility in InSb quantum wells, which is the highest for any semiconductor quantum well, can be further increased by reducing scattering by crystal defects. InSb-based heteroepitaxy is usually performed on semi-insulating GaAs (001) substrates due to the lack of a lattice matched semi-insulating substrate. The 14.6% mismatch between the lattice parameters of GaAs and InSb results in the formation of structural defects such as threading dislocations and microtwins which degrade the electrical and optical properties of InSb-based devices. Chapter 1 reviews the methods and procedures for growing InSb-based heterostructures by molecular beam epitaxy. Chapters 2 and 3 introduce techniques for minimizing the crystalline defects in InSb-based structures grown on GaAs substrates. Chapter 2 discusses a method of reducing threading dislocations by incorporating AlyIn1-ySb interlayers in an AlxIn1-xSb buffer layer and the reduction of microtwin defects by growth

  15. Complex band structure and electronic transmission eigenchannels

    DEFF Research Database (Denmark)

    Jensen, Anders; Strange, Mikkel; Smidstrup, Soren

    2017-01-01

    and complex band structure, in this case individual eigenchannel transmissions and different complex bands. We present calculations of decay constants for the two most conductive states as determined by complex band structure and standard DFT Landauer transport calculations for one semi-conductor and two...

  16. Syntheses and electronic structures of decamethylmetallocenes

    International Nuclear Information System (INIS)

    Robbins, J.L.

    1981-04-01

    The synthesis of decamethylmanganocene [(eta-C 5 (CH 3 ) 5 ) 2 Mn or (Me 5 Cp) 2 Mn)] is described. Magnetic susceptibility and electron paramagnetic resonance (EPR) studies show that (Me 5 Cp) 2 Mn is a low-spin, 17-electron compound with an orbitally degenerate, 2 E/sub 2g/ [e/sub 2g/ 3 a/sub 1g/ 2 ] ground state. An x-ray crystallographic study of (Me 5 Cp) 2 Mn shows that it is a monomeric, D/sub 5d/ decamethylmetallocene with metal to ring carbon distances that are about 0.3 A shorter than those determined for high-spin manganocenes. The syntheses of new (Me 5 Cp) 2 M (M = Mg,V,Cr,Co, and Ni) and [(Me 5 Cp) 2 M]PF 6 (M = Cr,Co, and Ni) compounds are described. In addition, a preparative route to a novel, dicationic decamethylmetallocene, [(Me 5 Cp) 2 Ni](PF 6 ) 2 is reported. Infrared, nuclear magnetic resonance, magnetic susceptibility, and/or x-ray crystallographic studies indicate that all the above compounds are D/sub 5d/ or D/sub 5h/ decamethylmetallocenes with low-spin electronic configurations. Cyclic voltammetry studies verify the reversibility and the one-electron nature of the (Me 5 Cp) 2 M → [(Me 5 Cp) 2 M] + (M = Cr,Mn,Fe,Co,Ni), [(Me 5 Cp) 2 Mn] - → (Me 5 Cp) 2 Mn and [(Me 5 Cp) 2 Ni] + → [Me 5 Cp) 2 Ni] 2+ redox reactions. These studies reveal that the neutral decamethylmetallocenes are much more easily oxidized than their metallocene counterparts. This result attests to the electron-donating properties of the ten substituent methyl groups. Proton and carbon-13 NMR data are reported for the diamagnetic Mg(II), Mn(I), Fe(II), Co(III), and Ni(IV) decamethylmetallocenes and for [(Me 5 Cp) 2 V(CO) 2 ] + . The uv-visible absorption spectra of the 15-, 18- and 20- electron decamethylmetallocenes are also reported

  17. Syntheses and electronic structures of decamethylmetallocenes

    Energy Technology Data Exchange (ETDEWEB)

    Robbins, J.L.

    1981-04-01

    The synthesis of decamethylmanganocene ((eta-C/sub 5/(CH/sub 3/)/sub 5/)/sub 2/Mn or (Me/sub 5/Cp)/sub 2/Mn)) is described. Magnetic susceptibility and electron paramagnetic resonance (EPR) studies show that (Me/sub 5/Cp)/sub 2/Mn is a low-spin, 17-electron compound with an orbitally degenerate, /sup 2/E/sub 2g/ (e/sub 2g//sup 3/ a/sub 1g//sup 2/) ground state. An x-ray crystallographic study of (Me/sub 5/Cp)/sub 2/Mn shows that it is a monomeric, D/sub 5d/ decamethylmetallocene with metal to ring carbon distances that are about 0.3 A shorter than those determined for high-spin manganocenes. The syntheses of new (Me/sub 5/Cp)/sub 2/M (M = Mg,V,Cr,Co, and Ni) and ((Me/sub 5/Cp)/sub 2/M)PF/sub 6/ (M = Cr,Co, and Ni) compounds are described. In addition, a preparative route to a novel, dicationic decamethylmetallocene, ((Me/sub 5/Cp)/sub 2/Ni)(PF/sub 6/)/sub 2/ is reported. Infrared, nuclear magnetic resonance, magnetic susceptibility, and/or x-ray crystallographic studies indicate that all the above compounds are D/sub 5d/ or D/sub 5h/ decamethylmetallocenes with low-spin electronic configurations. Cyclic voltammetry studies verify the reversibility and the one-electron nature of the (Me/sub 5/Cp)/sub 2/M ..-->.. ((Me/sub 5/Cp)/sub 2/M)/sup +/ (M = Cr,Mn,Fe,Co,Ni), ((Me/sub 5/Cp)/sub 2/Mn)/sup -/ ..-->.. (Me/sub 5/Cp)/sub 2/Mn and ((Me/sub 5/Cp)/sub 2/Ni)/sup +/ ..-->.. (Me/sub 5/Cp)/sub 2/Ni)/sup 2 +/ redox reactions. These studies reveal that the neutral decamethylmetallocenes are much more easily oxidized than their metallocene counterparts. This result attests to the electron-donating properties of the ten substituent methyl groups. Proton and carbon-13 NMR data are reported for the diamagnetic Mg(II), Mn(I), Fe(II), Co(III), and Ni(IV) decamethylmetallocenes and for ((Me/sub 5/Cp)/sub 2/V(CO)/sub 2/)/sup +/. The uv-visible absorption spectra of the 15-, 18- and 20- electron decamethylmetallocenes are also reported.

  18. Electron drag in ferromagnetic structures separated by an insulating interface

    Science.gov (United States)

    Kozub, V. I.; Muradov, M. I.; Galperin, Y. M.

    2018-06-01

    We consider electron drag in a system of two ferromagnetic layers separated by an insulating interface. The source of it is expected to be magnon-electron interactions. Namely, we assume that the external voltage is applied to the "active" layer stimulating electric current through this layer. In its turn, the scattering of the current-carrying electrons by magnons leads to a magnon drag current within this layer. The 3-magnons interactions between magnons in the two layers (being of non-local nature) lead to magnon drag within the "passive" layer which, correspondingly, produce electron drag current via processes of magnon-electron scattering. We estimate the drag current and compare it to the phonon-induced one.

  19. A lightweight electronically commutated dc motor for electric passenger vehicles

    Science.gov (United States)

    Echolds, E. F.; Walla, P. S.

    1982-01-01

    A functional model breadboard converter and a rare-earth-cobalt, permanent magnet motor; as well as an engineering model converter and PM motor suitable for vehicle installations were developed and tested. The converter and motor achieved an 88% peak efficiency, a maximum output of 26 kW at 26,000 rpm, and a continuous rating of 15 kW. The system also generated power to the source during braking, with a demonstrated peak power available at the converter terminals of approximately 26 kW at 88% efficiency. Major conclusions include: (1) the SAE J227a(D) driving cycle efficiency for the converter/motor is 86% to 88% when energy available for recovery at the converter terminals is included; (2) the converter initial cost is approximately five times that of the permanent magnet motor, but can be reduced by means of LSI logic and integrated liquid cooled semiconductor packages; and (3) an electronically commutated motor with a liquid cooled converter will operate reliably without service or maintenance for the life of a passenger vehicle.

  20. A lightweight electronically commutated dc motor for electric passenger vehicles

    Science.gov (United States)

    Echolds, E. F.; Walla, P. S.

    1982-09-01

    A functional model breadboard converter and a rare-earth-cobalt, permanent magnet motor; as well as an engineering model converter and PM motor suitable for vehicle installations were developed and tested. The converter and motor achieved an 88% peak efficiency, a maximum output of 26 kW at 26,000 rpm, and a continuous rating of 15 kW. The system also generated power to the source during braking, with a demonstrated peak power available at the converter terminals of approximately 26 kW at 88% efficiency. Major conclusions include: (1) the SAE J227a(D) driving cycle efficiency for the converter/motor is 86% to 88% when energy available for recovery at the converter terminals is included; (2) the converter initial cost is approximately five times that of the permanent magnet motor, but can be reduced by means of LSI logic and integrated liquid cooled semiconductor packages; and (3) an electronically commutated motor with a liquid cooled converter will operate reliably without service or maintenance for the life of a passenger vehicle.

  1. Molybdenum Nitride Films: Crystal Structures, Synthesis, Mechanical, Electrical and Some Other Properties

    Directory of Open Access Journals (Sweden)

    Isabelle Jauberteau

    2015-10-01

    Full Text Available Among transition metal nitrides, molybdenum nitrides have been much less studied even though their mechanical properties as well as their electrical and catalytic properties make them very attractive for many applications. The δ-MoN phase of hexagonal structure is a potential candidate for an ultra-incompressible and hard material and can be compared with c-BN and diamond. The predicted superconducting temperature of the metastable MoN phase of NaCl-B1-type cubic structure is the highest of all refractory carbides and nitrides. The composition of molybdenum nitride films as well as the structures and properties depend on the parameters of the process used to deposit the films. They are also strongly correlated to the electronic structure and chemical bonding. An unusual mixture of metallic, covalent and ionic bonding is found in the stoichiometric compounds.

  2. Electronic Spin Storage in an Electrically Readable Nuclear Spin Memory with a Lifetime >100 Seconds

    Science.gov (United States)

    McCamey, D. R.; Van Tol, J.; Morley, G. W.; Boehme, C.

    2010-12-01

    Electron spins are strong candidates with which to implement spintronics because they are both mobile and able to be manipulated. The relatively short lifetimes of electron spins, however, present a problem for the long-term storage of spin information. We demonstrated an ensemble nuclear spin memory in phosphorous-doped silicon, which can be read out electrically and has a lifetime exceeding 100 seconds. The electronic spin information can be mapped onto and stored in the nuclear spin of the phosphorus donors, and the nuclear spins can then be repetitively read out electrically for time periods that exceed the electron spin lifetime. We discuss how this memory can be used in conjunction with other silicon spintronic devices.

  3. Electronic structure and optical properties of solid C60

    International Nuclear Information System (INIS)

    Mattesini, M.; Ahuja, R.; Sa, L.; Hugosson, H.W.; Johansson, B.; Eriksson, O.

    2009-01-01

    The electronic structure and the optical properties of face-centered-cubic C 60 have been investigated by using an all-electron full-potential method. Our ab initio results show that the imaginary dielectric function for high-energy values looks very similar to that of graphite, revealing close electronic structure similarities between the two systems. We have also identified the origin of different peaks in the dielectric function of fullerene by means of the calculated electronic density of states. The computed optical spectrum compares fairly well with the available experimental data for the Vis-UV absorption spectrum of solid C 60 .

  4. Tuning Electronic Structures of BN and C Double-Wall Hetero-Nanotubes

    Directory of Open Access Journals (Sweden)

    Xueran Liu

    2015-01-01

    Full Text Available First principle calculations based on density functional theory with the generalized gradient approximation were carried out to investigate the energetic and electronic properties of carbon and boron nitride double-wall hetero-nanotubes (C/BN-DWHNTs with different chirality and size, including an armchair (n, n carbon nanotube (CNT enclosed in (m, m boron nitride nanotube (BNNT and a zigzag (n, 0 CNT enclosed in (m, 0 BNNT. The electronic structure of these DWHNTs under a transverse electric field was also investigated. The ability to tune the band gap with changing the intertube distance (di and imposing an external electric field (F of zigzag DWHNTs provides the possibility for future electronic and electrooptic nanodevice applications.

  5. Electronic structure of fractionally nuclear charged atoms

    International Nuclear Information System (INIS)

    Pavao, Antonio C.; Bastos, Cristiano C.; Ferreira, Joacy V.

    2008-01-01

    Different properties of quark chemistry are studied by performing accurate ab initio Hartree- Fock calculations on fractionally nuclear charged atoms. Ground and first excited states of sodium atoms with quarks attached to the nucleus are obtained using CI calculations. It is suggested that the sodium 2 P -> 2 S electronic transition can be used as a guide in searching for unconfined quarks. Also, the variation of the binding electronic energy with nuclear charge in the isoelectronic series of fractionally nuclear charged atoms A ±2/3 and A ±1/3 (A = H, Li, Na, P and Ca) is analyzed. The present calculations suggest that unconfined colored particles have large appetite for heavy nuclei and that quark-antiquark pairs could be stabilized in presence of the atomic matter. (author)

  6. Effects of an electric field on the electronic and optical properties of zigzag boron nitride nanotubes

    Science.gov (United States)

    Chegel, Raad; Behzad, Somayeh

    2011-02-01

    We have investigated the electro-optical properties of zigzag BNNTs, under an external electric field, using the tight binding approximation. It is found that an electric field modifies the band structure and splits the band degeneracy. Also the large electric strength leads to coupling the neighbor subbands which these effects reflect in the DOS and JDOS spectrum. It has been shown that, unlike CNTs, the band gap of BNNTs can be reduced linearly by applying a transverse external electric field. Also we show that the larger diameter tubes are more sensitive than small ones. The semiconducting metallic transition can be achieved through increasing the applied fields. The number and position of peaks in the JDOS spectrum are dependent on electric field strength. It is found that at a high electric field, the two lowest subbands are oscillatory with multiple nodes at the Fermi level.

  7. Structural Composite Supercapacitors: Electrical and Mechanical Impact of Separators and Processing Conditions

    Science.gov (United States)

    2013-09-01

    Structural Composite Supercapacitors : Electrical and Mechanical Impact of Separators and Processing Conditions by Edwin B. Gienger, James F...Proving Ground, MD 21005-5066 ARL-TR-6624 September 2013 Structural Composite Supercapacitors : Electrical and Mechanical Impact of...2012 4. TITLE AND SUBTITLE Structural Composite Supercapacitors : Electrical and Mechanical Impact of Separators and Processing Conditions 5a

  8. Tailoring electronic structure of polyazomethines thin films

    OpenAIRE

    J. Weszka; B. Hajduk; M. Domański; M. Chwastek; J. Jurusik; B. Jarząbek; H. Bednarski; P. Jarka

    2010-01-01

    Purpose: The aim of this work is to show how electronic properties of polyazomethine thin films deposited by chemical vapor deposition method (CVD) can be tailored by manipulating technological parameters of pristine films preparation as well as modifying them while the as-prepared films put into iodine atmosphere.Design/methodology/approach: The recent achievements in the field of designing and preparation methods to be used while preparing polymer photovoltaic solar cells or optoelectronic ...

  9. Tunneling emission of electrons from semiconductors' valence bands in high electric fields

    International Nuclear Information System (INIS)

    Kalganov, V. D.; Mileshkina, N. V.; Ostroumova, E. V.

    2006-01-01

    Tunneling emission currents of electrons from semiconductors to vacuum (needle-shaped GaAs photodetectors) and to a metal (silicon metal-insulator-semiconductor diodes with a tunneling-transparent insulator layer) are studied in high and ultrahigh electric fields. It is shown that, in semiconductors with the n-type conductivity, the major contribution to the emission current is made by the tunneling emission of electrons from the valence band of the semiconductor, rather than from the conduction band

  10. Transition of radial electric field by electron cyclotron heating in stellarator plasmas

    International Nuclear Information System (INIS)

    Idei, H.; Ida, K.; Sanuki, H.

    1993-06-01

    The transition of a radial electric field from a negative to a positive value is observed in Compact Helical System when the electron loss is sufficiently enhanced by the superposition of the off-axis second harmonic electron cyclotron heating on the neutral beam heated plasmas. The observed threshold for the enhanced particle flux required to cause the transition is compared with a theoretical prediction. (author)

  11. Electrically-detected electron paramagnetic resonance of point centers in 6H-SiC nanostructures

    Czech Academy of Sciences Publication Activity Database

    Bagraev, N.T.; Gets, D.S.; Kalabukhova, E.N.; Klyachkin, L.E.; Malyarenko, A.M.; Mashkov, V.A.; Savchenko, Dariia; Shanina, B.D.

    2014-01-01

    Roč. 48, č. 11 (2014), s. 1467-1480 ISSN 1063-7826 R&D Projects: GA MŠk(CZ) LM2011029 Grant - others:SAFMAT(XE) CZ.2.16/3.1.00/22132 Institutional support: RVO:68378271 Keywords : electron paramagnetic resonance * electrically- detected electron paramagnetic resonance * 6H -SiC nanostructures * nitrogen-vacancy defect * point defect Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.739, year: 2014

  12. Experimental search for the electron electric dipole moment with laser cooled francium atoms

    Energy Technology Data Exchange (ETDEWEB)

    Inoue, T., E-mail: inoue-t@cyric.tohoku.ac.jp [Tohoku University, Frontier Research Institute of Interdisciplinary Sciences (Japan); Ando, S.; Aoki, T.; Arikawa, H.; Ezure, S.; Harada, K.; Hayamizu, T.; Ishikawa, T.; Itoh, M.; Kato, K.; Kawamura, H.; Uchiyama, A. [Tohoku University, Cyclotron and Radioisotope Center (Japan); Aoki, T. [University of Tokyo, Graduate School of Arts and Sciences (Japan); Asahi, K. [Tokyo Institute of Technology, Department of Physics (Japan); Furukawa, T. [Tokyo Metropolitan University, Department of Physics (Japan); Hatakeyama, A. [Tokyo University of Agriculture and Technology, Department of Applied Physics (Japan); Hatanaka, K. [Osaka University, Research Center for Nuclear Physics (Japan); Imai, K. [Advanced Science Research Center, Japan Atomic Energy Agency (Japan); Murakami, T. [Kyoto University, Department of Physics (Japan); Nataraj, H. S. [Indian Institute of Technology Roorkee (India); and others

    2015-04-15

    A laser cooled heavy atom is one of the candidates to search for the permanent electric dipole moment (EDM) of the electron due to the enhancement mechanism and its long coherence time. The laser cooled francium (Fr) factory has been constructed to perform the electron EDM search at the Cyclotron and Radioisotope Center, Tohoku University. The present status of Fr production and the EDM measurement system is presented.

  13. Electronic structure and formation energy of a vacancy in aluminum

    International Nuclear Information System (INIS)

    Chakraborty, B.; Siegel, R.W.

    1981-11-01

    The electronic structure of a vacancy in Al was calculated self-consistently using norm-conserving ionic pseudopotentials obtained from ab initio atomic calculations. A 27-atom-site supercell containing 1 vacancy and 26 atoms was used to simulate the environment of the vacancy. A vacancy formation energy of 1.5 eV was also calculated (cf. the experimental value of 0.66 eV). The effects of the supercell and the nature of the ionic potential on the resulting electronic structure and formation energy are discussed. Results for the electronic structure of a divacancy are also presented. 3 figures

  14. One-Electron Theory of Metals. Cohesive and Structural Properties

    DEFF Research Database (Denmark)

    Skriver, Hans Lomholt

    The work described in the report r.nd the 16 accompanying publications is based upon a one-electron theory obtained within the local approximation to density-functional theory, and deals with the ground state of metals as obtained from selfconsistent electronic-structure calculations performed...... by means of the Linear Muffin-Tin Orbital (LMTO) method. It has been the goal of the work to establish how well this one-electron approach describes physical properties such as the crystal structures of the transition metals, the structural phase transitions in the alkali, alkaline earth, and rare earth...

  15. Structure and electron-ion correlation in liquid Mg

    Energy Technology Data Exchange (ETDEWEB)

    Tahara, Shuta [Graduate School of Sciences, Kyushu University, 4-2-1 Ropponmatsu Chuo-ku, Fukuoka 810-8560 (Japan); Fujii, Hiroyuki [Graduate School of Sciences, Kyushu University, 4-2-1 Ropponmatsu Chuo-ku, Fukuoka 810-8560 (Japan); Japan Synchrotron Radiation Research Institute, 1-1-1 Kouto Sayo-cho, Sayo-gun, Hyogo 679-5198 (Japan); Yokota, Yukinobu [Graduate School of Sciences, Kyushu University, 4-2-1 Ropponmatsu Chuo-ku, Fukuoka 810-8560 (Japan); Kawakita, Yukinobu [Department of Physics, Faculty of Sciences, Kyushu University, 4-2-1 Ropponmatsu Chuo-ku, Fukuoka 810-8560 (Japan); Kohara, Shinji [Japan Synchrotron Radiation Research Institute, 1-1-1 Kouto Sayo-cho, Sayo-gun, Hyogo 679-5198 (Japan); Takeda, Shin' ichi [Department of Physics, Faculty of Sciences, Kyushu University, 4-2-1 Ropponmatsu Chuo-ku, Fukuoka 810-8560 (Japan)]. E-mail: takeda@rc.kyushu-u.ac.jp

    2006-11-15

    For liquid Mg at 700 deg. C, structure factors were obtained from both neutron and X-ray diffraction measurements. The bond angle and coordination number distributions were derived from the reverse Monte Carlo analysis. By a combination of both structure factors, charge density function and electron-ion partial structure factor were deduced.

  16. Structural and electronic parameters of ferroelectric KWOF

    Science.gov (United States)

    Atuchin, V. V.; Gavrilova, T. A.; Kesler, V. G.; Molokeev, M. S.; Aleksandrov, K. S.

    2010-11-01

    The low-temperature ferroelectric G2 polymorph of K 3WO 3F 3 oxyfluoride is formed by chemical synthesis. The electronic parameters of G2-K 3WO 3F 3 have been measured by X-ray photoelectron spectroscopy under excitation with Al Kα radiation (1486.6 eV). Detailed spectra have been recorded for all element core levels and Auger lines. The chemical bonding effects in the WO 3F 3 and WO 6 octahedrons are considered by using the binding energy difference ΔBE(O-W)=BE(O 1s)-BE(W 4f).

  17. Nodal Structure of the Electronic Wigner Function

    DEFF Research Database (Denmark)

    Schmider, Hartmut; Dahl, Jens Peder

    1996-01-01

    On the example of several atomic and small molecular systems, the regular behavior of nodal patterns in the electronic one-particle reduced Wigner function is demonstrated. An expression found earlier relates the nodal pattern solely to the dot-product of the position and the momentum vector......, if both arguments are large. An argument analogous to the ``bond-oscillatory principle'' for momentum densities links the nuclear framework in a molecule to an additional oscillatory term in momenta parallel to bonds. It is shown that these are visible in the Wigner function in terms of characteristic...

  18. Electronic structure of the light actinides

    International Nuclear Information System (INIS)

    Dunlap, B.D.

    1976-01-01

    In the last few years, considerable advances have been made in our understanding of the properties of the light actinides. Although these are 5f transition elements formally equivalent to the lanthanide (4f) elements, these materials show a much more varied behavior due to the larger spatial extent and ionizability of the 5f electrons. A review is given of some areas of current interest, especially where hyperfine measurements have played an active role. These include studies of a variety of magnetic phenomena, systematics of isomer shift measurements, and studies of paramagnetic relaxation

  19. Combined 4-component and relativistic pseudopotential study of ThO for the electron electric dipole moment search.

    Science.gov (United States)

    Skripnikov, L V

    2016-12-07

    A precise theoretical study of the electronic structure of heavy atom diatomic molecules is of key importance to interpret the experiments in the search for violation of time-reversal (T) and spatial-parity (P) symmetries of fundamental interactions in terms of the electron electric dipole moment, eEDM, and dimensionless constant, k T,P , characterizing the strength of the T,P-odd pseudoscalar-scalar electron-nucleus neutral current interaction. The ACME collaboration has recently improved limits on these quantities using a beam of ThO molecules in the electronic H 3 Δ 1 state [J. Baron et al., Science 343, 269 (2014)]. We apply the combined direct relativistic 4-component and two-step relativistic pseudopotential/restoration approaches to a benchmark calculation of the effective electric field, E eff , parameter of the T,P-odd pseudoscalar-scalar interaction, W T,P , and hyperfine structure constant in Δ13 state of the ThO molecule. The first two parameters are required to interpret the experimental data in terms of the eEDM and k T,P constant. We have investigated the electron correlation for all of the 98 electrons of ThO simultaneously up to the level of the coupled cluster with single, double, and noniterative triple amplitudes, CCSD(T), theory. Contributions from iterative triple and noniterative quadruple cluster amplitudes for the valence electrons have been also treated. The obtained values are E eff = 79.9 GV/cm, W T,P = 113.1 kHz. The theoretical uncertainty of these values is estimated to be about two times smaller than that of our previous study [L. V. Skripnikov and A. V. Titov, J. Chem. Phys., 142, 024301 (2015)]. It was found that the correlation of the inner- and outer-core electrons contributes 9% to the effective electric field. The values of the molecule frame dipole moment of the Δ13 state and the H 3 Δ 1 →X 1 Σ + transition energy of ThO calculated within the same methods are in a very good agreement with the experiment.

  20. Electron beam crosslinked PVC : structure property relationships

    International Nuclear Information System (INIS)

    Gupta, Neeraj K.; Sabharwal, Sunil

    2001-01-01

    PVC is used extensively for its insulating properties for the manufacture of wires and cables and for other applications. Its gradual degradation, oxidation and even dehydro chlorination restricts use for long lasting period in installations such as high temperature zones, underground cables, communication systems, electro-nuclear facilities, etc. The technological properties and performance characteristics of PVC based insulation can be improved via crosslinking by high-energy electrons. PVC is however a polymer, which on irradiation predominantly undergoes degradation. To avoid degradation, it needs to be compounded with sensitizing agents or multifunctional monomers so that crosslinking is the predominant reaction. Radiation cross linkable formulations are complex mixtures of resin and various additives incorporated for achieving desired technological and performance characteristics, ease of processing and improving quality. The proper choice of additives and sensitizing agents enable low dose requirements for efficient crosslinking and improvements in various technological properties. The purposes of this work was to investigate the effect of using a binary sensitizer blend of a trifunctional monomer and a rubber in PVC, and develop suitable electron beam cross linkable formulations for wire insulation. This paper presents some aspects of the investigations and development of insulation demonstrated at industrial scale

  1. The electric monopole transition: Nuclear structure, and nuclear spectroscopy

    International Nuclear Information System (INIS)

    Zganiar, E.F.

    1992-01-01

    The electric monopole (E0) transition process provides unique information on the structure of nuclei. For example, δI=0 transitions between nuclear configurations of different shape have enhanced EO components. The authors have observed I π→Iπ (I=0) transitions in 185 Pt and 184 Pt which are pure E0. This is unprecedented. Further, they have initiated searches for the location of the superdeformed band in 192 Hg utilizing internal conversion spectroscopy and, for the first time, internal pair spectroscopy. Additionally, the lifetime of the 0 + 2 level in 188 Hg was measured with a newly developed picosecond lifetime system which utilized the 0 + 2 →0 + 1 E0 internal conversion transition as an energy gate and its associated atomic X-ray as a fast trigger. The role of the E0 internal conversion process in the study of nuclear structure and as a tool in nuclear spectroscopy are discussed

  2. Electric field dependence of the electron mobility in bulk wurtzite ZnO

    Indian Academy of Sciences (India)

    ZnO) material is studied. The low-field electron mobility is calculated as a function of doping concentration and lattice temperature. The results show that above nearly 50 K the electrical conduction is governed by activation through the bulk ...

  3. Automotive Electrical and Electronic Systems I; Automotive Mechanics 2: 9045.03.

    Science.gov (United States)

    Dade County Public Schools, Miami, FL.

    The automotive electrical and electronic system I course is designed as one of a group of quinmester courses offered in the field of automotive mechanics. General information will be given along with technical knowledge, basic skills, attitudes and values that are required for job entry level. The nine week (135 clock hour) course overcomes some…

  4. A multiferroic material to search for the permanent electric dipole moment of the electron

    Czech Academy of Sciences Publication Activity Database

    Rushchanskii, K.Z.; Kamba, Stanislav; Goian, Veronica; Vaněk, Přemysl; Savinov, Maxim; Prokleška, J.; Nuzhnyy, Dmitry; Knížek, Karel; Laufek, F.; Eckel, S.; Lamoreaux, S.K.; Sushkov, A.; Ležaič, M.; Spaldin, N.A.

    2010-01-01

    Roč. 9, č. 8 (2010), s. 649-654 ISSN 1476-1122 R&D Projects: GA ČR(CZ) GA202/09/0682 Institutional research plan: CEZ:AV0Z10100520 Keywords : multiferroics * electric dipole moment of the electron * dielectric and magnetic properties Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 29.897, year: 2010

  5. The standard model prediction for the electric dipole moment of the electron

    International Nuclear Information System (INIS)

    Hoogeveen, F.

    1990-01-01

    The electric dipole moment of the electron is calculated within the standard model with three generations of quarks. Depending on the values of some unknown parameters like the top quark mass and the CP-violating phase δ in the Kobayashi-Maskawa matrix, its value is of the order of magnitude of 2x10 -38 vertical strokeevertical stroke cm. (orig.)

  6. A New Approach in Teaching Power Electronics Control of Electrical Drives using Real-Time

    DEFF Research Database (Denmark)

    Teodorescu, Remus; Bech, Michael Møller; Blaabjerg, Frede

    2000-01-01

    A new approach in teaching power electronics and electrical drives is achieved at the Flexible Drives System Laboratory (FDSL) from Aalborg University by using the new Total Development Environment (TDE) concept that allows a full visual block-oriented programming of dynamic real-time systems...

  7. Vertex corrections to the mean-field electrical conductivity in disordered electron systems

    Czech Academy of Sciences Publication Activity Database

    Pokorný, Vladislav; Janiš, Václav

    2013-01-01

    Roč. 25, č. 17 (2013), "175502-1"-"175502-10" ISSN 0953-8984 Institutional support: RVO:68378271 Keywords : disordered electron systems * electrical conductivity * vertex corrections Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.223, year: 2013

  8. Adiabatic and non-adiabatic electron oscillations in a static electric field

    International Nuclear Information System (INIS)

    Wahlberg, C.

    1977-03-01

    The influence of a static electric field on the oscillations of a one-dimensional stream of electrons is investigated. In the weak field limit the oscillations are adiabatic and mode coupling negligible, but becomes significant if the field is tronger. The latter effect is believed to be of importance for the stability of e.g. potential double layers

  9. Electronic structure and isomer shifts of Sn halides

    International Nuclear Information System (INIS)

    Terra, J.; Guenzburger, D.

    1988-01-01

    The all-electron first-principles Discrete Variational method was employed to study the electronic structure of SnF 4 , SnCl 4 , SnBr 4 and SnI 4 . Values of the electronic density at the Sn nucleus were derived and related to 119 Sn Isomer Shifts to obtain the nuclear constant Δ 2 >. Differences in values of ρ(o) area discussed in terms of the chemical bonding between Sn and halogen atoms. (author) [pt

  10. Electronic structure of graphene beyond the linear dispersion regime

    OpenAIRE

    POWER, STEPHEN; FERREIRA, MAURO

    2011-01-01

    PUBLISHED Among the many interesting features displayed by graphene, one of the most attractive is the simplicity with which its electronic structure can be described. The study of its physical properties is significantly simplified by the linear dispersion relation of electrons in a narrow range around the Fermi level. Unfortunately, the mathematical simplicity of graphene electrons is limited only to this narrow energy region and is not very practical when dealing with problems that invo...

  11. Phase stability and electronic structure of transition-metal aluminides

    International Nuclear Information System (INIS)

    Carlsson, A.E.

    1992-01-01

    This paper will describe the interplay between die electronic structure and structural energetics in simple, complex, and quasicrystalline Al-transition metal (T) intermetallics. The first example is the Ll 2 -DO 22 competition in Al 3 T compounds. Ab-initio electronic total-energy calculations reveal surprisingly large structural-energy differences, and show that the phase stability of both stoichiometric and ternary-substituted compounds correlates closely with a quasigap in the electronic density of states (DOS). Secondly, ab-initio calculations for the structural stability of the icosahedrally based Al 12 W structure reveal similar quasigap effects, and provide a simple physical explanation for the stability of the complex aluminide structures. Finally, parametrized tight-binding model calculations for the Al-Mn quasicrystal reveal a large spread in the local Mn DOS behavior, and support a two-site model for the quasicrystal's magnetic behavior

  12. Thermo-structural analysis and electrical conductivity behavior of epoxy/metals composites

    Science.gov (United States)

    Boumedienne, N.; Faska, Y.; Maaroufi, A.; Pinto, G.; Vicente, L.; Benavente, R.

    2017-05-01

    This paper reports on the elaboration and characterization of epoxy resin filled with metallic particles powder (aluminum, tin and zinc) composites. The scanning electron microscopy (SEM) pictures, density measurements and x-ray diffraction analysis (DRX) showed a homogeneous phase of obtained composites. The differential scanning calorimetry revealed a good adherence at matrix-filler interfaces, confirming the SEM observations. The measured glass transition temperatures depend on composites fillers' nature. Afterwards, the electrical conductivity of composites versus their fillers' contents has been investigated. The obtained results depict a nonlinear behavior, indicating an insulator to conductor phase transition at a conduction threshold; with high contrast of ten decades. Hence, the elaborated materials give a possibility to obtain dielectric or electrically conducting phases, which can to be interesting in the choice of desired applications. Finally, the obtained results have been successfully simulated on the basis of different percolation models approach combined with structural characterization inferences.

  13. Crystal structure and electrical resistivity studies of Gd(Fe1-x Cox)2 intermetallics

    International Nuclear Information System (INIS)

    Onak, M.; Guzdek, P.; Stoch, P.; Chmist, J.; Bednarski, M.; Panta, A.; Pszczola, J.

    2007-01-01

    From X-ray analysis (295 K) it was found that the cubic, MgCu 2 -type, Fd3m crystal structure appears across the Gd(Fe 1-x Co x ) 2 series. Electrical resistivity measurements for the Gd(Fe 1-x Co x ) 2 intermetallics were performed in a wide temperature region and the parameters characterizing the resistivity dependence on temperature and composition were determined. The differential of the electrical resistivity against temperature was used to estimate Curie temperatures. The Curie temperature versus x, high and moderately increasing in the iron-rich area, rapidly drops in the cobalt-rich region. The obtained results are compared with the data known for the Dy(Fe 1-x Co x ) 2 series. The Curie temperature is related to both the number of 3d electrons and the de Gennes factor

  14. Electronic structure of filled tetrahedral semiconductors

    NARCIS (Netherlands)

    Wood, D.M.; Zunger, Alex; Groot, R. de

    1985-01-01

    We discuss the susceptibility of zinc-blende semiconductors to band-structure modification by insertion of small atoms at their tetrahedral interstitial states. GaP is found to become a direct-gap semiconductor with two He atoms present at its interstitial sites; Si does not. Analysis of the factors

  15. Electronic Band Structure of Helical Polyisocyanides.

    Science.gov (United States)

    Champagne, Benoît; Liégeois, Vincent; Fripiat, Joseph G; Harris, Frank E

    2017-10-19

    Restricted Hartree-Fock computations are reported for a methyl isocyanide polymer (repeating unit -C═N-CH 3 ), whose most stable conformation is expected to be a helical chain. The computations used a standard contracted Gaussian orbital set at the computational levels STO-3G, 3-21G, 6-31G, and 6-31G**, and studies were made for two line-group configurations motivated by earlier work and by studies of space-filling molecular models: (1) A structure of line-group symmetry L9 5 , containing a 9-fold screw axis with atoms displaced in the axial direction by 5/9 times the lattice constant, and (2) a structure of symmetry L4 1 that had been proposed, containing a 4-fold screw axis with translation by 1/4 of the lattice constant. Full use of the line-group symmetry was employed to cause most of the computational complexity to depend only on the size of the asymmetric repeating unit. Data reported include computed bond properties, atomic charge distribution, longitudinal polarizability, band structure, and the convoluted density of states. Most features of the description were found to be insensitive to the level of computational approximation. The work also illustrates the importance of exploiting line-group symmetry to extend the range of polymer structural problems that can be treated computationally.

  16. Effects of electron-transfer chemical modification on the electrical characteristics of graphene

    International Nuclear Information System (INIS)

    Fan Xiaoyan; Tanigaki, Katsumi; Nouchi, Ryo; Yin Lichang

    2010-01-01

    Because of the large reactivity of single layer graphene to electron-transfer chemistries, 4-nitrobenzene diazonium tetrafluoroborate is employed to modify the electrical properties of graphene field-effect transistors. After modification, the transfer characteristics of chemically modified graphene show a reduction in the minimum conductivity, electron-hole mobility asymmetry, a decrease in the electron/hole mobility, and a positive shift of the charge neutrality point with broadening of the minimum conductivity region. These phenomena are attributed to a dediazoniation reaction and the adsorbates on the graphene surface.

  17. Effects of electron-transfer chemical modification on the electrical characteristics of graphene

    Energy Technology Data Exchange (ETDEWEB)

    Fan Xiaoyan; Tanigaki, Katsumi [Department of Physics, Graduate School of Science, Tohoku University, Sendai 980-8578 (Japan); Nouchi, Ryo [WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8578 (Japan); Yin Lichang, E-mail: nouchi@sspns.phys.tohoku.ac.jp [Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016 (China)

    2010-11-26

    Because of the large reactivity of single layer graphene to electron-transfer chemistries, 4-nitrobenzene diazonium tetrafluoroborate is employed to modify the electrical properties of graphene field-effect transistors. After modification, the transfer characteristics of chemically modified graphene show a reduction in the minimum conductivity, electron-hole mobility asymmetry, a decrease in the electron/hole mobility, and a positive shift of the charge neutrality point with broadening of the minimum conductivity region. These phenomena are attributed to a dediazoniation reaction and the adsorbates on the graphene surface.

  18. Electron acceleration by longitudinal electric field of a gaussian laser beam

    International Nuclear Information System (INIS)

    Takeuchi, Satoshi; Sugihara, Ryo; Shimoda, Koichi.

    1991-11-01

    It is shown that the longitudinal electric field of a transverse magnetic mode of a Gaussian laser beam accelerates an electron to an ultra-relativistic energy. The electron is captured and accelerated in a length of the order of the Rayleigh range. The ultimate energy increment of the electron with a single laser beam is given by the product of transverse field intensity and the beam waist, and can be of the order of 100MeV. This fact implies that a multi-stage acceleration enables TeV-order-acceleration in a length of a few kilometers with the present state of the art. (author)

  19. Electronic structure of epitaxial chalcopyrite surfaces and interfaces for photovoltaics

    International Nuclear Information System (INIS)

    Hofmann, Andreas

    2012-01-01

    electron states was observed, which can be understood as a higher localization of electronic states and lower crystal quality. In addition, a strong rearrangement of the copper partial density of states was shown. The intimate knowledge of the electric structure was then exploited to demonstrate the valence band discontinuity between CuInSe 2 and CuIn 3 Se 5 . The analysis by photoemission yielded a valence band offset of 0.28 eV, again in reasonable agreement with theoretical results. The p-n-junction in chalcopyrite solar cells is situated near the absorber-buffer interface, which is therefore crucial for the device performance. In this thesis, ZnO deposited from metal-organic precursors on epitaxial CuInSe 2 was investigated as cadmium-free buffer material. In the course of contact formation, the interfacial region of the absorber becomes depleted of copper. Additionally, a thin intrinsic ZnSe layer is formed, prior to the growth of ZnO. The derived band alignments show no dependence on the surface orientation of the chalcopyrite substrate and are consistent with theoretical results. The conduction band lineup is favorable for the application in solar cells.

  20. Electronic structure and ionicity of actinide oxides from first principles

    DEFF Research Database (Denmark)

    Petit, Leon; Svane, Axel; Szotek, Z.

    2010-01-01

    The ground-state electronic structures of the actinide oxides AO, A2O3, and AO2 (A=U, Np, Pu, Am, Cm, Bk, and Cf) are determined from first-principles calculations, using the self-interaction corrected local spin-density approximation. Emphasis is put on the degree of f-electron localization, whi...

  1. On the electronic structure of high Tc superconductors

    International Nuclear Information System (INIS)

    Fink, J.; Nuecker, N.; Romberg, H.; Alexander, M.; Knupfer, M.; Mante, J.; Claessen, R.; Buslaps, T.; Harm, S.; Manzke, R.; Skibowski, M.

    1992-01-01

    Studies of the electronic structure of high-T c superconductors and related compounds by high-energy spectroscopies are reviewed. In particular, we report on investigations by electron energy-loss, angle-resolved photoemission, and inverse angle-resolved photoemission spectroscopy. Information on the symmetry and the character of states close to the Fermi level has been obtained. 25 refs., 8 figs

  2. Electronic structure and equilibrium properties of hcp titanium

    Indian Academy of Sciences (India)

    The electronic structures of hexagonal-close-packed divalent titanium (3-d) and zirconium (4-d) transition metals are studied by using a non-local model potential method. From the present calculation of energy bands, Fermi energy, density of states and the electronic heat capacity of these two metals are determined and ...

  3. Weiss oscillations in the electronic structure of modulated graphene

    International Nuclear Information System (INIS)

    Tahir, M; Sabeeh, K; MacKinnon, A

    2007-01-01

    We present a theoretical study of the electronic structure of modulated graphene in the presence of a perpendicular magnetic field. The density of states and the bandwidth for the Dirac electrons in this system are determined. The appearance of unusual Weiss oscillations in the bandwidth and density of states is the main focus of this work

  4. Electronic Structure of Au25 Clusters: Between Discrete and Continuous

    KAUST Repository

    Katsiev, Khabiboulakh

    2016-07-15

    Here, an approach based on synchrotron resonant photoemission is emplyed to explore the transition between quantization and hybridization of the electronic structure in atomically precise ligand-stabilized nanoparticles. While the presence of ligands maintains quantization in Au25 clusters, their removal renders increased hybridization of the electronic states at the vicinity of the Fermi level. These observations are supported by DFT studies.

  5. Electronic Structure of Au25 Clusters: Between Discrete and Continuous

    KAUST Repository

    Katsiev, Khabiboulakh; Lozova, Nataliya; Wang, Lu; Katla, Saikrishna; Li, Ruipeng; Mei, Wai Ning; Skrabalak, Sara; Challa, Challa; Losovyj, Yaroslav

    2016-01-01

    Here, an approach based on synchrotron resonant photoemission is emplyed to explore the transition between quantization and hybridization of the electronic structure in atomically precise ligand-stabilized nanoparticles. While the presence of ligands maintains quantization in Au25 clusters, their removal renders increased hybridization of the electronic states at the vicinity of the Fermi level. These observations are supported by DFT studies.

  6. Electronic Structure of Cdse Nanowires Terminated With Gold ...

    African Journals Online (AJOL)

    Bheema

    Owing to their unusual electronic and structural properties, SC clusters have received considerable attention ... performing molecular dynamics simulations. A similar .... Analysis of the charge density, gap, corresponding to states with energies ...

  7. Structures and electronics of buried and unburied semiconductor interfaces

    International Nuclear Information System (INIS)

    Kamiya, Itaru

    2011-01-01

    The structure of interfaces plays an important role in determining the electronic properties of semiconductor nanostructures. Here, such examples are shown and discussed using semiconductor nanostructures prepared by molecular beam epitaxy and colloidal synthesis.

  8. Manganites in Perovskite Superlattices: Structural and Electronic Properties

    KAUST Repository

    Jiwuer, Jilili

    2016-01-01

    Perovskite manganites are widely investigated compounds due to the discovery of the colossal magnetoresistance effect in 1994. They have a broad range of structural, electronic, magnetic properties and potential device applications in sensors

  9. Structure and electron-ion correlation of liquid germanium

    Energy Technology Data Exchange (ETDEWEB)

    Kawakita, Y. [Faculty of Sciences, Kyushu University, 4-2-1 Ropponmatsu, Fukuoka 810-8560 (Japan)]. E-mail: kawakita@rc.kyushu-u.ac.jp; Fujita, S. [Graduate School of Sciences, Kyushu University, 4-2-1 Ropponmatsu, Fukuoka 810-8560 (Japan); Kohara, S. [Japan Synchrotron Radiation Research Institute, 1-1-1 Kouto Mikazuki-cho, Hyogo 679-5198 (Japan); Ohshima, K. [Graduate School of Sciences, Kyushu University, 4-2-1 Ropponmatsu, Fukuoka 810-8560 (Japan); Fujii, H. [Graduate School of Sciences, Kyushu University, 4-2-1 Ropponmatsu, Fukuoka 810-8560 (Japan); Yokota, Y. [Graduate School of Sciences, Kyushu University, 4-2-1 Ropponmatsu, Fukuoka 810-8560 (Japan); Takeda, S. [Faculty of Sciences, Kyushu University, 4-2-1 Ropponmatsu, Fukuoka 810-8560 (Japan)

    2005-08-15

    Structure factor of liquid germanium (Ge) has a shoulder at {theta} = 3.2 A{sup -1} in the high-momentum-transfer region of the first peak. To investigate the origin of such a non-simplicity in the structure, high energy X-ray diffraction measurements have been performed using 113.26 keV incident X-ray, at BL04B2 beamline of SPring-8. By a combination of the obtained structure factor with the reported neutron diffraction data, charge density function and electron-ion partial structure factor have been deduced. The peak position of the charge distribution is located at about 1 A, rather smaller r value than the half value of nearest neighbor distance ({approx}2.7 A), which suggests that valence electrons of liquid Ge play a role of screening electrons around a metallic ion rather than covalently bonding electrons.

  10. Structure functions in electron-nucleon deep inelastic scattering

    Energy Technology Data Exchange (ETDEWEB)

    Saleem, M.; Fazal-E-Aleem (University of the Punjab, Lahore (Pakistan). Dept. of Physics)

    1982-06-26

    The phenomenological expressions for the structure functions in electron-nucleon deep inelastic scattering are proposed and are shown to satisfy the experimental data as well as a number of sum rules.

  11. First-principle calculations of structural, electronic, optical, elastic ...

    Indian Academy of Sciences (India)

    S CHEDDADI

    2017-11-28

    Nov 28, 2017 ... First-principle calculations on the structural, electronic, optical, elastic and thermal properties of the chalcopyrite ... The Kohn–Sham equations were solved using the ... RMTKmax = 7 was used for all the investigated systems,.

  12. Electronic structure of incident carbon ions on a graphite surface

    International Nuclear Information System (INIS)

    Kiuchi, Masato; Takeuchi, Takae; Yamamoto, Masao.

    1997-01-01

    The electronic structure of an incident carbon ion on a graphite surface is discussed on the basis of ab initio molecular orbital calculations. A carbon cation forms a covalent bond with the graphite, and a carbon nonion is attracted to the graphite surface through van der Waals interaction. A carbon anion has no stable state on a graphite surface. The charge effects of incident ions become clear upon detailed examination of the electronic structure. (author)

  13. Structural and electrical properties of conducting diamond nanowires.

    Science.gov (United States)

    Sankaran, Kamatchi Jothiramalingam; Lin, Yen-Fu; Jian, Wen-Bin; Chen, Huang-Chin; Panda, Kalpataru; Sundaravel, Balakrishnan; Dong, Chung-Li; Tai, Nyan-Hwa; Lin, I-Nan

    2013-02-01

    Conducting diamond nanowires (DNWs) films have been synthesized by N₂-based microwave plasma enhanced chemical vapor deposition. The incorporation of nitrogen into DNWs films is examined by C 1s X-ray photoemission spectroscopy and morphology of DNWs is discerned using field-emission scanning electron microscopy and transmission electron microscopy (TEM). The electron diffraction pattern, the visible-Raman spectroscopy, and the near-edge X-ray absorption fine structure spectroscopy display the coexistence of sp³ diamond and sp² graphitic phases in DNWs films. In addition, the microstructure investigation, carried out by high-resolution TEM with Fourier transformed pattern, indicates diamond grains and graphitic grain boundaries on surface of DNWs. The same result is confirmed by scanning tunneling microscopy and scanning tunneling spectroscopy (STS). Furthermore, the STS spectra of current-voltage curves discover a high tunneling current at the position near the graphitic grain boundaries. These highly conducting regimes of grain boundaries form effective electron paths and its transport mechanism is explained by the three-dimensional (3D) Mott's variable range hopping in a wide temperature from 300 to 20 K. Interestingly, this specific feature of high conducting grain boundaries of DNWs demonstrates a high efficiency in field emission and pave a way to the next generation of high-definition flat panel displays or plasma devices.

  14. Three-dimensional imaging of vortex structure in a ferroelectric nanoparticle driven by an electric field.

    Science.gov (United States)

    Karpov, D; Liu, Z; Rolo, T Dos Santos; Harder, R; Balachandran, P V; Xue, D; Lookman, T; Fohtung, E

    2017-08-17

    Topological defects of spontaneous polarization are extensively studied as templates for unique physical phenomena and in the design of reconfigurable electronic devices. Experimental investigations of the complex topologies of polarization have been limited to surface phenomena, which has restricted the probing of the dynamic volumetric domain morphology in operando. Here, we utilize Bragg coherent diffractive imaging of a single BaTiO 3 nanoparticle in a composite polymer/ferroelectric capacitor to study the behavior of a three-dimensional vortex formed due to competing interactions involving ferroelectric domains. Our investigation of the structural phase transitions under the influence of an external electric field shows a mobile vortex core exhibiting a reversible hysteretic transformation path. We also study the toroidal moment of the vortex under the action of the field. Our results open avenues for the study of the structure and evolution of polar vortices and other topological structures in operando in functional materials under cross field configurations.Imaging of topological states of matter such as vortex configurations has generally been limited to 2D surface effects. Here Karpov et al. study the volumetric structure and dynamics of a vortex core mediated by electric-field induced structural phase transition in a ferroelectric BaTiO 3 nanoparticle.

  15. Related electrical, superconducting and structural characteristics of low temperature indium films

    International Nuclear Information System (INIS)

    Belevtsev, B.I.; Pilipenko, V.V.; Yatsuk, L.Ya.

    1981-01-01

    Reported are results of a complex study of electrical, superconducting and structural properties of indium films vacuum evaporated onto a liquid helium-cooled substrate. Structural electron diffraction investigations gave a better insight into the general features of the annealing during the warming-up of cold-deposited films. It is found that the annealing of indium films to about 80 to 100 K entails an irreversible growth of interplanar separations due to decreasing inhomogeneous microstresses. As the films are warmed from 100 to 300 K, the principal annealing processes are determined by crystallite growth and development of dominating orientation. The changes in the residual resistance and in Tsub(c) with warming the cold-deported films are explained on the base of structural data obtained. In particular, a direct relationship is revealed between the crystallite size and Tsub(c) [ru

  16. Evaluation of electrical, structural, thermal and optical properties of Co_3O_4 semiconductor

    International Nuclear Information System (INIS)

    Dias, Jeferson A.; Maestrelli, Sylma C.; Morelli, Marcio R.

    2016-01-01

    Among the new semiconductors, the tricobalt tetraoxide is a material of increasing interest; nevertheless, there is a limited number of studies about its properties. Thus, this work has investigated the structural, thermal, optical and electronic properties of Co_3O_4 and its correlation with structure and microstructure. For that, the commercial material was characterized by X-ray diffraction, thermal analysis, diffuse reflectance, FTIR and impedance spectroscopy. The results have shown that the assessed Co_3O_4 has non-stoichiometric spinel structure, presenting a band gap energy capable to completely absorb the visible spectra (1.75 eV). Furthermore, it can be visualized in infrared spectra the bands related to Co-O bonds. The activation energy of electric conduction was 0.35 eV related to the hopping mechanism. Therefore, the results confirm the potentiality of use of Co_3O_4 in optoelectronic devices due to its promising properties for technological utilization. (author)

  17. Integration Assessment of Visiting Vehicle Induced Electrical Charging of the International Space Station Structure

    Science.gov (United States)

    Kramer, Leonard; Kerslake, Thomas W.; Galofaro, Joel T.

    2010-01-01

    The International Space Station (ISS) undergoes electrical charging in low Earth orbit (LEO) due to positively biased, exposed conductors on solar arrays that collect electrical charges from the space plasma. Exposed solar array conductors predominately collect negatively charged electrons and thus drive the metal ISS structure electrical ground to a negative floating potential (FP) relative to plasma. This FP is variable in location and time as a result of local ionospheric conditions. ISS motion through Earth s magnetic field creates an addition inductive voltage up to 20 positive and negative volts across ISS structure depending on its attitude and location in orbit. ISS Visiting Vehicles (VVs), such as the planned Orion crew exploration vehicle, contribute to the ISS plasma charging processes. Upon physical contact with ISS, the current collection properties of VVs combine with ISS. This is an ISS integration concern as FP must be controlled to minimize arcing of ISS surfaces and ensure proper management of extra vehicular activity crewman shock hazards. This report is an assessment of ISS induced charging from docked Orion vehicles employing negatively grounded, 130 volt class, UltraFlex (ATK Space Systems) solar arrays. To assess plasma electron current collection characteristics, Orion solar cell test coupons were constructed and subjected to plasma chamber current collection measurements. During these tests, coupon solar cells were biased between 0 and 120 V while immersed in a simulated LEO plasma. Tests were performed using several different simulated LEO plasma densities and temperatures. These data and associated theoretical scaling of plasma properties, were combined in a numerical model which was integrated into the Boeing Plasma Interaction Model. It was found that the solar array design for Orion will not affect the ISS FP by more than about 2 V during worst case charging conditions. This assessment also motivated a trade study to determine

  18. Electrical and structural characterization of Nb-Si thin alloy film

    International Nuclear Information System (INIS)

    Nava, F.; Psaras, P.A.; Takai, H.; Tu, K.N.; Valeri, S.; Bisi, O.

    1986-01-01

    The structural and electrical properties of a Nb-Si thin alloy film as a function of temperature have been studied by Auger electron spectrometry, Rutherford backscattering spectroscopy, transmission electron microscopies, and in situ electrical resistivity and Hall coefficient measurements. The NbSi/sub 2.8/ films were deposited by double electron-gun coevaporation onto oxidized silicon. For electrical measurements samples of a van der Pauw pattern were made through metallic masks. In the as-deposited state the coevaporated alloy film was amorphous. Upon annealing a precipitous drop in resistivity near 270 0 C has been determined to be the amorphous to crystalline phase transformation. The kinetics of the transformation has been determined by isothermal heat treatment over the temperature range of 224 0 to 252 0 C. An apparent activation energy of 1.90 eV has been measured. The nucleation and growth kinetics in the crystallization process show a change in the power of time dependence from 5.5 to 2.4. The microstructures of films at various states of annealing have been correlated to the resistivity change. The crystalline NbSi 2 shows an anomalous metallic behavior. The resistivity (rho) versus temperature curve has a large negative deviation from linearity (dfl) and it approaches a saturation value (rho/sub sat/) as temperature increases. The resistivity data are fitted by two empirical expressions put forth to explain the resistivity behavior in A15 superconductors at low and high temperatures. One is based on the idea that ideal resistivity must approach some limiting value in the regime where the mean free path becomes comparable to the interatomic spacing and the other is based on a selective electron--phonon assisted scattering

  19. Electronic differential control of 2WD electric vehicle considering steering stability

    Science.gov (United States)

    Hua, Yiding; Jiang, Haobin; Geng, Guoqing

    2017-03-01

    Aiming at the steering wheel differential steering control technology of rear wheel independent driving electric wheel, considering the assisting effect of electronic differential control on vehicle steering, based on the high speed steering characteristic of electric wheel car, the electronic differential speed of auxiliary wheel steering is also studied. A yaw moment control strategy is applied to the vehicle at high speed. Based on the vehicle stability reference value, yaw rate is used to design the fuzzy controller to distribute the driving wheel torque. The simulation results show that the basic electronic differential speed function is realized based on the yaw moment control strategy, while the vehicle stability control is improved and the driving safety is enhanced. On the other hand, the torque control strategy can also assist steering of vehicle.

  20. Electrical Initialization of Electron and Nuclear Spins in a Single Quantum Dot at Zero Magnetic Field.

    Science.gov (United States)

    Cadiz, Fabian; Djeffal, Abdelhak; Lagarde, Delphine; Balocchi, Andrea; Tao, Bingshan; Xu, Bo; Liang, Shiheng; Stoffel, Mathieu; Devaux, Xavier; Jaffres, Henri; George, Jean-Marie; Hehn, Michel; Mangin, Stephane; Carrere, Helene; Marie, Xavier; Amand, Thierry; Han, Xiufeng; Wang, Zhanguo; Urbaszek, Bernhard; Lu, Yuan; Renucci, Pierre

    2018-04-11

    The emission of circularly polarized light from a single quantum dot relies on the injection of carriers with well-defined spin polarization. Here we demonstrate single dot electroluminescence (EL) with a circular polarization degree up to 35% at zero applied magnetic field. The injection of spin-polarized electrons is achieved by combining ultrathin CoFeB electrodes on top of a spin-LED device with p-type InGaAs quantum dots in the active region. We measure an Overhauser shift of several microelectronvolts at zero magnetic field for the positively charged exciton (trion X + ) EL emission, which changes sign as we reverse the injected electron spin orientation. This is a signature of dynamic polarization of the nuclear spins in the quantum dot induced by the hyperfine interaction with the electrically injected electron spin. This study paves the way for electrical control of nuclear spin polarization in a single quantum dot without any external magnetic field.