WorldWideScience

Sample records for electronic band states

  1. Electron Elevator: Excitations across the Band Gap via a Dynamical Gap State.

    Science.gov (United States)

    Lim, A; Foulkes, W M C; Horsfield, A P; Mason, D R; Schleife, A; Draeger, E W; Correa, A A

    2016-01-29

    We use time-dependent density functional theory to study self-irradiated Si. We calculate the electronic stopping power of Si in Si by evaluating the energy transferred to the electrons per unit path length by an ion of kinetic energy from 1 eV to 100 keV moving through the host. Electronic stopping is found to be significant below the threshold velocity normally identified with transitions across the band gap. A structured crossover at low velocity exists in place of a hard threshold. An analysis of the time dependence of the transition rates using coupled linear rate equations enables one of the excitation mechanisms to be clearly identified: a defect state induced in the gap by the moving ion acts like an elevator and carries electrons across the band gap.

  2. Joint density of states of wide-band-gap materials by electron energy loss spectroscopy

    International Nuclear Information System (INIS)

    Fan, X.D.; Peng, J.L.; Bursill, L.A.

    1998-01-01

    Kramers-Kronig analysis for parallel electron energy loss spectroscopy (PEELS) data is developed as a software package. When used with a JEOL 4000EX high-resolution transmission electron microscope (HRTEM) operating at 100 keV this allows us to obtain the dielectric function of relatively wide band gap materials with an energy resolution of approx 1.4 eV. The imaginary part of the dielectric function allows the magnitude of the band gap to be determined as well as the joint-density-of-states function. Routines for obtaining three variations of the joint-density of states function, which may be used to predict the optical and dielectric response for angle-resolved or angle-integration scattering geometries are also described. Applications are presented for diamond, aluminum nitride (AlN), quartz (SiO 2 ) and sapphire (Al 2 O 3 ). The results are compared with values of the band gap and density of states results for these materials obtained with other techniques. (authors)

  3. Role of Electronic Structure In Ion Band State Theory of Low Energy Nuclear Reactions

    Science.gov (United States)

    Chubb, Scott

    2004-03-01

    The Nuts and Bolts of our Ion Band State (IBS) theory of low energy nuclear reactions (LENR's) in palladium-deuteride (PdD) and palladium-hydride (PdH) are the electrons that hold together or tear apart the bonds (or lack of bonds) between deuterons (d's) or protons (p's) and the host material. In PdDx and PdH_x, this bonding is strongly correlated with loading: in ambient loading conditions (x< 0. 6), the bonding in hibits IBS occupation. As x arrow 1, slight increases and decreases in loading can lead to vibrations (which have conventionally been thought to occur from phonons) that can induce potential losses or increases of p/d. Naive assumptions about phonons fail to include these losses and increases. These effects can occur because neither H or D has core electrons and because in either PdD or PdH, the electrons near the Fermi Energy have negligible overlap with the nucleus of either D or H. I use these ideas to develop a formal justification, based on a generalization of conventional band theory (Scott Chubb, "Semi-Classical Conduction of Charged and Neutral Particles in Finite Lattices," 2004 March Meeting."), for the idea that occupation of IBS's can occur and that this can lead to nuclear reactions.

  4. S-band 300 W pulsed solid state microwave amplifier development for driving high power klystrons for electron accelerators

    International Nuclear Information System (INIS)

    Mohania, Praveen; Shrivastava, Purushottam; Hannurkar, P.R.

    2005-01-01

    S-Band Microwave electron accelerators like microtrons and linear accelerators need pulsed microwaves from few megawatts to tens of megawatts to accelerator the electrons to desired energy and intensity. Klystron tube based driver amplifiers were used to drive the high power klystrons, which need microwave power from few tens of watts to 1 kW depending on tube output power and gain. A endeavour was initiated at Centre for Advanced Technology to develop state of art solid state S-band microwave amplifiers indigenously to drive the klystron tubes. A modular design approach was used and individual modules up to 160 W power levels were developed and tested. Finally combining 160 W modules will give up to 300 W output power. Several more modules can be combined to achieve even high power levels. Present paper describes the developmental efforts of 300 W S-band solid-state amplifiers and related microwave technologies. (author)

  5. Energies of rare-earth ion states relative to host bands in optical materials from electron photoemission spectroscopy

    Science.gov (United States)

    Thiel, Charles Warren

    There are a vast number of applications for rare-earth-activated materials and much of today's cutting-edge optical technology and emerging innovations are enabled by their unique properties. In many of these applications, interactions between the rare-earth ion and the host material's electronic states can enhance or inhibit performance and provide mechanisms for manipulating the optical properties. Continued advances in these technologies require knowledge of the relative energies of rare-earth and crystal band states so that properties of available materials may be fully understood and new materials may be logically developed. Conventional and resonant electron photoemission techniques were used to measure 4f electron and valence band binding energies in important optical materials, including YAG, YAlO3, and LiYF4. The photoemission spectra were theoretically modeled and analyzed to accurately determine relative energies. By combining these energies with ultraviolet spectroscopy, binding energies of excited 4fN-15d and 4fN+1 states were determined. While the 4fN ground-state energies vary considerably between different trivalent ions and lie near or below the top of the valence band in optical materials, the lowest 4f N-15d states have similar energies and are near the bottom of the conduction band. As an example for YAG, the Tb3+ 4f N ground state is in the band gap at 0.7 eV above the valence band while the Lu3+ ground state is 4.7 eV below the valence band maximum; however, the lowest 4fN-15d states are 2.2 eV below the conduction band for both ions. We found that a simple model accurately describes the binding energies of the 4fN, 4fN-1 5d, and 4fN+1 states. The model's success across the entire rare-earth series indicates that measurements on two different ions in a host are sufficient to predict the energies of all rare-earth ions in that host. This information provides new insight into electron transfer transitions, luminescence quenching, and valence

  6. Photoconductivities from band states and a dissipative electron dynamics: Si(111) without and with adsorbed Ag clusters

    International Nuclear Information System (INIS)

    Vazhappilly, Tijo; Hembree, Robert H.; Micha, David A.

    2016-01-01

    A new general computational procedure is presented to obtain photoconductivities starting from atomic structures, combining ab initio electronic energy band states with populations from density matrix theory, and implemented for a specific set of materials based on Si crystalline slabs and their nanostructured surfaces without and with adsorbed Ag clusters. The procedure accounts for charge mobility in semiconductors in photoexcited states, and specifically electron and hole photomobilities at Si(111) surfaces with and without adsorbed Ag clusters using ab initio energy bands and orbitals generated from a generalized gradient functional, however with excited energy levels modified to provide correct bandgaps. Photoexcited state populations for each band and carrier type were generated using steady state solution of a reduced density matrix which includes dissipative medium effects. The present calculations provide photoexcited electronic populations and photoinduced mobilities resulting from applied electric fields and obtained from the change of driven electron energies with their electronic momentum. Extensive results for Si slabs with 8 layers, without and with adsorbed Ag clusters, show that the metal adsorbates lead to substantial increases in the photomobility and photoconductivity of electrons and holes

  7. Electronic band structure

    International Nuclear Information System (INIS)

    Grosso, G.

    1986-01-01

    The aim of this chapter is to present, in detail, some theoretical methods used to calculate electronic band structures in crystals. The basic strategies employed to attack the problem of electronic-structure calculations are presented. Successive sections present the basic formulations of the tight-binding, orthogonalized-plane-wave, Green'sfunction, and pseudopotential methods with a discussion of their application to perfect solids. Exemplifications in the case of a few selected problems provide further insight by the author into the physical aspects of the different methods and are a guide to the use of their mathematical techniques. A discussion is offered of completely a priori Hartree-Fock calculations and attempts to extend them. Special aspects of the different methods are also discussed in light of recently published related work

  8. Band gap and defect states of MgO thin films investigated using reflection electron energy loss spectroscopy

    Directory of Open Access Journals (Sweden)

    Sung Heo

    2015-07-01

    Full Text Available The band gap and defect states of MgO thin films were investigated by using reflection electron energy loss spectroscopy (REELS and high-energy resolution REELS (HR-REELS. HR-REELS with a primary electron energy of 0.3 keV revealed that the surface F center (FS energy was located at approximately 4.2 eV above the valence band maximum (VBM and the surface band gap width (EgS was approximately 6.3 eV. The bulk F center (FB energy was located approximately 4.9 eV above the VBM and the bulk band gap width was about 7.8 eV, when measured by REELS with 3 keV primary electrons. From a first-principles calculation, we confirmed that the 4.2 eV and 4.9 eV peaks were FS and FB, induced by oxygen vacancies. We also experimentally demonstrated that the HR-REELS peak height increases with increasing number of oxygen vacancies. Finally, we calculated the secondary electron emission yields (γ for various noble gases. He and Ne were not influenced by the defect states owing to their higher ionization energies, but Ar, Kr, and Xe exhibited a stronger dependence on the defect states owing to their small ionization energies.

  9. The dependence of the tunneling characteristic on the electronic energy bands and the carrier’s states of Graphene superlattice

    Science.gov (United States)

    Yang, C. H.; Shen, G. Z.; Ao, Z. M.; Xu, Y. W.

    2016-09-01

    Using the transfer matrix method, the carrier tunneling properties in graphene superlattice generated by the Thue-Morse sequence and Kolakoski sequence are investigated. The positions and strength of the transmission can be modulated by the barrier structures, the incident energy and angle, the height and width of the potential. These carriers tunneling characteristic can be understood from the energy band structures in the corresponding superlattice systems and the carrier’s states in well/barriers. The transmission peaks above the critical incident angle rely on the carrier’s resonance in the well regions. The structural diversity can modulate the electronic and transport properties, thus expanding its applications.

  10. Electron and hole states in quantum dot quantum wells within a spherical eight-band model

    NARCIS (Netherlands)

    Pokatilov, E.P.; Fonoberov, V.A.; Fomin, V.; Devreese, J.T.

    2001-01-01

    In order to study heterostructures composed both of materials with strongly different parameters and of materials with narrow band gaps, we have developed an approach [E. P. Pokatilov [etal], Phys. Rev. B 64, 245328 (2001), (preceding paper)], which combines the spherical eight-band effective-mass

  11. Solid state Ka-band pulse oscillator with frequency electronic switching

    Directory of Open Access Journals (Sweden)

    Dvornichenko V. P.

    2015-08-01

    Full Text Available Transmitting devices for small radars in the millimeter wavelength range with high resolution on range and noise immunity. The work presents the results of research and development of compact pulse oscillators with digital frequency switching from pulse to pulse. The oscillator consists of a frequency synthesizer and a synchronized amplifier on the IMPATT diode. Reference oscillator of synthesizer is synchronized by crystal oscillator with digital PLL system and contains a frequency multiplier and an amplifier operating in pulse mode. Small-sized frequency synthesizer of 8 mm wave lengths provides an output power of ~1.2 W per pulse with a frequency stability of no worse than 2•10–6. Radiation frequency is controlled by three-digit binary code in OOL levels. Synchronized amplifier made on IMPATT diodes provides microwave power up to 20 W in oscillator output with microwave pulse duration of 100—300 ns in an operating band. The oscillator can be used as a driving source for the synchronization of semiconductor and electro-vacuum devices of pulsed mode, and also as a transmitting device for small-sized radar of millimeter wave range.

  12. Electron correlations in narrow band systems

    International Nuclear Information System (INIS)

    Kishore, R.

    1983-01-01

    The effect of the electron correlations in narrow bands, such as d(f) bands in the transition (rare earth) metals and their compounds and the impurity bands in doped semiconductors is studied. The narrow band systems is described, by the Hubbard Hamiltonian. By proposing a local self-energy for the interacting electron, it is found that the results are exact in both atomic and band limits and reduce to the Hartree Fock results for U/Δ → 0, where U is the intra-atomic Coulomb interaction and Δ is the bandwidth of the noninteracting electrons. For the Lorentzian form of the density of states of the noninteracting electrons, this approximation turns out to be equivalent to the third Hubbard approximation. A simple argument, based on the mean free path obtained from the imaginary part of the self energy, shows how the electron correlations can give rise to a discontinous metal-nonmetal transition as proposed by Mott. The band narrowing and the existence of the satellite below the Fermi energy in Ni, found in photoemission experiments, can also be understood. (Author) [pt

  13. Electrons in feldspar II: A consideration of the influence of conduction band-tail states on luminescence processes

    DEFF Research Database (Denmark)

    Poolton, H.R.J.; Ozanyan, K.B.; Wallinga, J.

    2002-01-01

    consider what influence the band tails have on the luminescence properties of feldspar, where electrons travel through the sample prior to recombination. The work highlights the dominant role that 0.04-0.05-eV phonons play in both the luminescence excitation and emission processes of these materials...

  14. Matrix elements of intraband transitions in quantum dot intermediate band solar cells: the influence of quantum dot presence on the extended-state electron wave-functions

    International Nuclear Information System (INIS)

    Nozawa, Tomohiro; Arakawa, Yasuhiko

    2014-01-01

    The intraband transitions which are essential for quantum dot intermediate band solar cells (QD IBSCs) are theoretically investigated by estimating the matrix elements from a ground bound state, which is often regarded as an intermediate band (IB), to conduction band (CB) states for a structure with a quantum dot (QD) embedded in a matrix (a QD/matrix structure). We have found that the QD pushes away the electron envelope functions (probability densities) from the QD region in almost all quantum states above the matrix CB minimum. As a result, the matrix elements of the intraband transitions in the QD/matrix structure are largely reduced, compared to those calculated assuming the envelope functions of free electrons (i.e., plane-wave envelope functions) in a matrix structure as the final states of the intraband transitions. The result indicates the strong influence of the QD itself on the intraband transitions from the IB to the CB states in QD IBSC devices. This work will help in better understanding the problem of the intraband transitions and give new insight, that is, engineering of quantum states is indispensable for the realization of QD IBSCs with high solar energy conversion efficiencies. (paper)

  15. Complex band structure and electronic transmission eigenchannels

    DEFF Research Database (Denmark)

    Jensen, Anders; Strange, Mikkel; Smidstrup, Soren

    2017-01-01

    and complex band structure, in this case individual eigenchannel transmissions and different complex bands. We present calculations of decay constants for the two most conductive states as determined by complex band structure and standard DFT Landauer transport calculations for one semi-conductor and two...

  16. Electron currents associated with an auroral band

    International Nuclear Information System (INIS)

    Spiger, R.J.; Anderson, H.R.

    1975-01-01

    Measurements of electron pitch angle distributions and energy spectra over a broad auroral band were used to calculate net electric current carried by auroral electrons in the vicinity of the band. The particle energy spectrometers were carried by a Nike-Tomahawk rocket launched from Poker Flat, Alaska, at 0722 UT on February 25, 1972. Data are presented which indicate the existence of upward field-aligned currents of electrons in the energy range 0.5-20 keV. The spatial relationship of these currents to visual structure of the auroral arc and the characteristics of the electrons carrying the currents are discussed

  17. Electron currents associated with an auroral band

    Science.gov (United States)

    Spiger, R. J.; Anderson, H. R.

    1975-01-01

    Measurements of electron pitch angle distributions and energy spectra over a broad auroral band were used to calculate net electric current carried by auroral electrons in the vicinity of the band. The particle energy spectrometers were carried by a Nike-Tomahawk rocket launched from Poker Flat, Alaska, at 0722 UT on February 25, 1972. Data are presented which indicate the existence of upward field-aligned currents of electrons in the energy range 0.5-20 keV. The spatial relationship of these currents to visual structure of the auroral arc and the characteristics of the electrons carrying the currents are discussed.

  18. Topological nanophononic states by band inversion

    Science.gov (United States)

    Esmann, Martin; Lamberti, Fabrice Roland; Senellart, Pascale; Favero, Ivan; Krebs, Olivier; Lanco, Loïc; Gomez Carbonell, Carmen; Lemaître, Aristide; Lanzillotti-Kimura, Norberto Daniel

    2018-04-01

    Nanophononics is essential for the engineering of thermal transport in nanostructured electronic devices, it greatly facilitates the manipulation of mechanical resonators in the quantum regime, and it could unveil a new route in quantum communications using phonons as carriers of information. Acoustic phonons also constitute a versatile platform for the study of fundamental wave dynamics, including Bloch oscillations, Wannier-Stark ladders, and other localization phenomena. Many of the phenomena studied in nanophononics were inspired by their counterparts in optics and electronics. In these fields, the consideration of topological invariants to control wave dynamics has already had a great impact for the generation of robust confined states. Interestingly, the use of topological phases to engineer nanophononic devices remains an unexplored and promising field. Conversely, the use of acoustic phonons could constitute a rich platform to study topological states. Here, we introduce the concept of topological invariants to nanophononics and experimentally implement a nanophononic system supporting a robust topological interface state at 350 GHz. The state is constructed through band inversion, i.e., by concatenating two semiconductor superlattices with inverted spatial mode symmetries. The existence of this state is purely determined by the Zak phases of the constituent superlattices, i.e., the one-dimensional Berry phase. We experimentally evidenced the mode through Raman spectroscopy. The reported robust topological interface states could become part of nanophononic devices requiring resonant structures such as sensors or phonon lasers.

  19. Electron band theory 1952-1962

    International Nuclear Information System (INIS)

    Lomer, W.M.

    1980-01-01

    Work undertaken by the Theoretical Physics Division between 1952 and 1965 to obtain an understanding of electrons in metals, with uranium and the actinides and the structurally-important transition metals as the main targets is examined. A main result of that period was a conviction that the majority of the physical properties of all metals, except the 4f rare-earth series and the actinides beyond uranium, were dominated by band effects which could be described well enough for most purposes by simple one-electron calculations with simple self-consistent fields. The period from 1960 on showed increasingly clearly the necessity of incorporating relativistic spin-orbit coupling terms in the heavy metals, and some 'local exchange field' correction to the fields close to nuclei. The problems of the non-local interaction of spins - highly important for alloy theory and for antiferromagnetic instability -required the evolution of computers large enough to produce wave-functions at all wave-vectors for all bands so that the susceptibility at arbitrary wave-vector could be computed. This work has not proved to be very illuminating so far, and much interest again focusses today on heuristic arguments that give qualitative descriptions of band structures, such as canonical d-bands to account for crystal structure. (UK)

  20. Engineering flat electronic bands in quasiperiodic and fractal loop geometries

    Energy Technology Data Exchange (ETDEWEB)

    Nandy, Atanu, E-mail: atanunandy1989@gmail.com; Chakrabarti, Arunava, E-mail: arunava_chakrabarti@yahoo.co.in

    2015-11-06

    Exact construction of one electron eigenstates with flat, non-dispersive bands, and localized over clusters of various sizes is reported for a class of quasi-one-dimensional looped networks. Quasiperiodic Fibonacci and Berker fractal geometries are embedded in the arms of the loop threaded by a uniform magnetic flux. We work out an analytical scheme to unravel the localized single particle states pinned at various atomic sites or over clusters of them. The magnetic field is varied to control, in a subtle way, the extent of localization and the location of the flat band states in energy space. In addition to this we show that an appropriate tuning of the field can lead to a re-entrant behavior of the effective mass of the electron in a band, with a periodic flip in its sign. - Highlights: • Exact construction of eigenstates with flat and dispersive bands is reported. • Competition between translational order and growth of aperiodicity is discussed. • The effect of magnetic field on the location of flat band states is shown. • Flux tunable re-entrant behavior of the effective mass of electron is studied.

  1. Attractive electron correlation in wide band gap semiconductors by electron-photon interaction

    International Nuclear Information System (INIS)

    Takeda, Hiroyuki; Yoshino, Katsumi

    2004-01-01

    We theoretically demonstrate attractive electron correlation in wide band gap semiconductors by electron-photon interaction. At low temperature, wavevectors of electromagnetic waves absorbed in wide band gap semiconductors cannot be neglected for wavevectors of electron waves; that is, electromagnetic waves affect the movements of electrons. In particular, attractive interaction occurs between two electrons when one electron changes from a valence band to a conduction band and the other electron changes from a conduction band to a valence band

  2. Electronic band structures of binary skutterudites

    International Nuclear Information System (INIS)

    Khan, Banaras; Aliabad, H.A. Rahnamaye; Saifullah; Jalali-Asadabadi, S.; Khan, Imad; Ahmad, Iftikhar

    2015-01-01

    The electronic properties of complex binary skutterudites, MX 3 (M = Co, Rh, Ir; X = P, As, Sb) are explored, using various density functional theory (DFT) based theoretical approaches including Green's Function (GW) as well as regular and non-regular Tran Blaha modified Becke Jhonson (TB-mBJ) methods. The wide range of calculated bandgap values for each compound of this skutterudites family confirm that they are theoretically as challenging as their experimental studies. The computationally expensive GW method, which is generally assume to be efficient in the reproduction of the experimental bandgaps, is also not very successful in the calculation of bandgaps. In this article, the issue of the theoretical bandgaps of these compounds is resolved by reproducing the accurate experimental bandgaps, using the recently developed non-regular TB-mBJ approach, based on DFT. The effectiveness of this technique is due to the fact that a large volume of the binary skutterudite crystal is empty and hence quite large proportion of electrons lie outside of the atomic spheres, where unlike LDA and GGA which are poor in the treatment of these electrons, this technique properly treats these electrons and hence reproduces the clear electronic picture of these compounds. - Highlights: • Theoretical and experimental electronic band structures of binary skutterudites are reviewed. • The literature reveals that none of the existing theoretical results are consistent with the experiments. • GW, regular and non-regular TB-mBJ methods are used to reproduce the correct results. • The GW and regular TB-mBJ results are better than the available results in literature. • However, non-regular TB-mBJ reproduces the correct experimental band structures

  3. Electronic band structures of binary skutterudites

    Energy Technology Data Exchange (ETDEWEB)

    Khan, Banaras [Center for Computational Materials Science, University of Malakand, Chakdara (Pakistan); Department of Physics, University of Malakand, Chakdara (Pakistan); Aliabad, H.A. Rahnamaye [Department of Physics, Hakim Sabzevari University, Sabzevar (Iran, Islamic Republic of); Saifullah [Center for Computational Materials Science, University of Malakand, Chakdara (Pakistan); Department of Physics, University of Malakand, Chakdara (Pakistan); Jalali-Asadabadi, S. [Department of Physics, Faculty of Science, University of Isfahan (UI), 81744 Isfahan (Iran, Islamic Republic of); Khan, Imad [Center for Computational Materials Science, University of Malakand, Chakdara (Pakistan); Department of Physics, University of Malakand, Chakdara (Pakistan); Ahmad, Iftikhar, E-mail: ahma5532@gmail.com [Center for Computational Materials Science, University of Malakand, Chakdara (Pakistan); Department of Physics, University of Malakand, Chakdara (Pakistan)

    2015-10-25

    The electronic properties of complex binary skutterudites, MX{sub 3} (M = Co, Rh, Ir; X = P, As, Sb) are explored, using various density functional theory (DFT) based theoretical approaches including Green's Function (GW) as well as regular and non-regular Tran Blaha modified Becke Jhonson (TB-mBJ) methods. The wide range of calculated bandgap values for each compound of this skutterudites family confirm that they are theoretically as challenging as their experimental studies. The computationally expensive GW method, which is generally assume to be efficient in the reproduction of the experimental bandgaps, is also not very successful in the calculation of bandgaps. In this article, the issue of the theoretical bandgaps of these compounds is resolved by reproducing the accurate experimental bandgaps, using the recently developed non-regular TB-mBJ approach, based on DFT. The effectiveness of this technique is due to the fact that a large volume of the binary skutterudite crystal is empty and hence quite large proportion of electrons lie outside of the atomic spheres, where unlike LDA and GGA which are poor in the treatment of these electrons, this technique properly treats these electrons and hence reproduces the clear electronic picture of these compounds. - Highlights: • Theoretical and experimental electronic band structures of binary skutterudites are reviewed. • The literature reveals that none of the existing theoretical results are consistent with the experiments. • GW, regular and non-regular TB-mBJ methods are used to reproduce the correct results. • The GW and regular TB-mBJ results are better than the available results in literature. • However, non-regular TB-mBJ reproduces the correct experimental band structures.

  4. Design of an Electronic Chest-Band

    Science.gov (United States)

    Atakan, R.; Acikgoz Tufan, H.; Baskan, H.; Eryuruk, S. H.; Akalin, N.; Kose, H.; Li, Y.; Kursun Bahadir, S.; Kalaoglu, F.

    2017-10-01

    In this study, an electronic chest strap prototype was designed for measuring fitness level, performance optimization, mobility and fall detection. Knitting technology is used for production by using highly elastic nylon yarn. In order to evaluate comfort performance of the garment, yarn strength and elongation, air permeability, moisture management and FAST tests (Fabric Assurance Fabric Testing) were carried out, respectively. After testing of textile part of the chest band, IMU sensors were integrated onto the garment by means of conductive yarns. Electrical conductivity of the circuit was also assessed at the end. Results indicated that the weight and the thickness of the product are relatively high for sports uses and it has a negative impact on comfort properties. However, it is highly stretchable and moisture management properties are still in acceptable values. From the perspective of possible application areas, developed smart chest band in this research could be used in sports facilities as well as health care applications for elderly and disabled people.

  5. f-electron systems: pushing band theory

    International Nuclear Information System (INIS)

    Koelling, D.D.

    1991-01-01

    The f-electron orbitrals have always been the ''incomplete atomic shells acting as local moments, and weakly interacting with the remaining electronic structure'' in the minds of most people. So examining them using a band theory where one views them as itinerant was once - and to some extent even today still is - considered with some skepticism. Nonetheless, a very significant community has successfully utilized band theory as a probe of the electronic structure of the appropriate actinides and rare earths. Those people actually using the approach would be the first to declare that it is not the whole solution. Instead, one is pushing and even exceeding its limit of applicability. However, the apropriate procedure is to push the model consistently to its limits, patch where possible, and then look to see where discrepancies remain. I propose to offer a selected review of past developments (emphasizing the career to data of A.J. Freeman in this area), offer a list of interesting puzzles for the future, and then make some guesses as to the techniques one might want to use. (orig.)

  6. Solid State KA-Band, Solid State W-Band and TWT Amplifiers, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Phase I of the proposal describes plans to develop a state of the art transmitter for the W-Band and KA -Band Cloud Radar system. Our focus will be concentrated in...

  7. Collective states in 230Th: band structure

    Directory of Open Access Journals (Sweden)

    A. I. Levon

    2009-12-01

    Full Text Available Experimental data for the excited states in the deformed nucleus 230Th studied in the (p, t reaction are analyzed. Sequences of the states are selected which can be treated as rotational bands and as multiplets of excitations. Experimental data are compared with the interacting boson model (IBM and the quasiparticle-phonon model (QPM calculations.

  8. Deduction of the chemical state and the electronic structure of Nd{sub 2}Fe{sub 14}B compound from X-ray photoelectron spectroscopy core-level and valence-band spectra

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jing; Liang, Le [School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Zhang, Lanting, E-mail: lantingzh@sjtu.edu.cn, E-mail: lmsun@sjtu.edu.cn [School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Hirano Institute for Materials Innovation, Shanghai Jiao Tong University, Shanghai 200240 (China); Sun, Limin, E-mail: lantingzh@sjtu.edu.cn, E-mail: lmsun@sjtu.edu.cn [Instrumental Analysis Center, Shanghai Jiao Tong University, Shanghai 200240 (China); Hirano, Shinichi [Hirano Institute for Materials Innovation, Shanghai Jiao Tong University, Shanghai 200240 (China)

    2014-10-28

    Characterization of chemical state and electronic structure of the technologically important Nd{sub 2}Fe{sub 14}B compound is attractive for understanding the physical nature of its excellent magnetic properties. X-ray photoelectron spectroscopy (XPS) study of such rare-earth compound is important and also challenging due to the easy oxidation of surface and small photoelectron cross-sections of rare-earth 4f electrons and B 2p electrons, etc. Here, we reported an investigation based on XPS spectra of Nd{sub 2}Fe{sub 14}B compound as a function of Ar ion sputtering time. The chemical state of Fe and that of B in Nd{sub 2}Fe{sub 14}B compound can be clearly determined to be 0 and −3, respectively. The Nd in Nd{sub 2}Fe{sub 14}B compound is found to have the chemical state of close to +3 instead of +3 as compared with the Nd in Nd{sub 2}O{sub 3}. In addition, by comparing the valence-band spectrum of Nd{sub 2}Fe{sub 14}B compound to that of the pure Fe, the contributions from Nd, Fe, and B to the valence-band structure of Nd{sub 2}Fe{sub 14}B compound is made more clear. The B 2p states and B 2s states are identified to be at ∼11.2 eV and ∼24.6 eV, respectively, which is reported for the first time. The contribution from Nd 4f states can be identified both in XPS core-level spectrum and XPS valence-band spectrum. Although Nd 4f states partially hybridize with Fe 3d states, Nd 4f states are mainly localized in Nd{sub 2}Fe{sub 14}B compound.

  9. Band mapping of surface states vs. adsorbate coverage

    International Nuclear Information System (INIS)

    Rotenberg, E.; Kevan, S.D.; Denlinger, J.D.; Chung, Jin-Wook

    1997-01-01

    The theory of electron bands, which arises from basic quantum mechanical principles, has been the cornerstone of solid state physics for over 60 years. Simply put, an energy band is an electron state in a solid whose energy varies with its momentum (similar to, but with a more complicated dependence than, how a free electron's energy is proportional to its momentum squared). Much attention over the last 15 years has been given to the study of band structure of surfaces and interfaces, especially as the applications of these two-dimensional systems have become increasingly important to industry and science. The ultraESCA endstation at beamline 7.01 at the Advanced Light Source was developed for very high-energy - (∼50 meV) and angular - ( 12 photons/sec) makes the detailed study of the evolution of bands possible. The authors are interested in learning how, when one forms a chemical bond between a metal and an overlaying atom or molecule, the resulting charge transfer to or from the adsorbate affects the surface bands. In some cases of interest, intermediate coverages lead to different band structure than at the extremes of clean and saturated surfaces. Surfaces of tungsten are particularly interesting, as their atomic geometry has been shown to be exquisitely sensitive to both the surface vibrational and electronic properties. In this study, the authors looked at the surface bands of tungsten ((110) surface), as a function both of coverage and mass of overlaying atoms. The adsorbed atoms were hydrogen and the alkali atoms lithium and cesium

  10. Electronic states of myricetin

    DEFF Research Database (Denmark)

    Vojta, Danijela; Karlsen, Eva; Spanget-Larsen, Jens

    2017-01-01

    Myricetin (3,3',4',5,5',7'-hexahydroxyflavone) was investigated by linear dichroism spectroscopy on molecular samples partially aligned in stretched poly(vinyl alcohol) (PVA). At least five electronic transitions in the range 40000 – 20000 cm–1 were characterized with respect to their wavenumbers......, relative intensities, and transition moment directions. The observed bands were assigned to electronic transitions predicted with TD-B3LYP/6-31+G(d,p)....

  11. Nuts and Bolts of the Ion Band State Theory

    Science.gov (United States)

    Chubb, Scott R.

    2005-12-01

    The nuts and bolts of our ion band state theory of low energy nuclear reactions (LENR's) in palladium-deuteride (PdD) and palladium-hydride (PdH) are the electrons that hold together or tear apart the bonds (or lack of bonds) between deuterons (d's) or protons (p's) and the host material. In PdDx and PdHx, this bonding is strongly correlated with loading. In ambient loading conditions (x ≲ 0.6), bonding inhibits ion band state occupation. As x → 1, slight increases and decreases in loading can induce "vibrations" (which have conventionally been thought to occur from phonons) that can induce potential losses or increases of p/d. Naive assumptions about phonons fail to include these losses and increases. These effects can occur because neither H or D has core electrons and because in either PdD or PdH, the electrons near the Fermi energy have negligible overlap with the nucleus of either D or H. In the past, implicitly, we have used these facts to justify our ion band state theory. Here, we present a more formal justification, based on the relationship between H(D) ion band states (IBS's) and H(D) phonons that includes a microscopic picture that explains why occupation of IBS's can occur in PdD and PdH and how this can lead to nuclear reactions.

  12. First–principle calculation of the elastic, band structure, electronic states, and optical properties of Cu–doped ZnS nanolayers

    Energy Technology Data Exchange (ETDEWEB)

    Lahiji, Mohammadreza Askaripour, E-mail: m.a.lahijiii@gmail.com [Department of applied mathematics, Astaneh Ashrafieh Branch, Islamic Azad University, Astaneh Ashrafieh (Iran, Islamic Republic of); Ziabari, Ali Abdolahzadeh, E-mail: ali.abd.ziabari@gmail.com [Nano Research Lab, Lahijan Branch, Islamic Azad University, P.O. Box: 1616, Lahijan (Iran, Islamic Republic of)

    2016-11-15

    The structural, elastic, electronic, and optical properties of undoped and Cu–doped ZnS nanostructured layers have been studied in the zincblende (ZB) phase, by first–principle approach. Density functional theory (DFT) has been employed to calculate the fundamental properties of the layers using full–potential linearized augmented plane–wave (FPLAPW) method. Mechanical analysis revealed that the bulk modulus increases with the increase of Cu content. Cu doping was found to reduce the band gap value of the material. In addition, DOS effective mass of the electrons and heavy holes was evaluated. Adding Cu caused the decrement/increment of transmission/reflectance of nanolayers in the UV–vis region. The substitution by Cu increased the intensity of the peaks, and a slight red shift was observed in the absorption peak. Moreover, the static dielectric constant, and static refractive index increased with Cu content. The optical conductivity also followed a similar trend to that of the dielectric constants. Energy loss function of the modeled compounds was also evaluated. All calculated parameters were compared with the available experimental and other theoretical results.

  13. Electronic Band Structure of Helical Polyisocyanides.

    Science.gov (United States)

    Champagne, Benoît; Liégeois, Vincent; Fripiat, Joseph G; Harris, Frank E

    2017-10-19

    Restricted Hartree-Fock computations are reported for a methyl isocyanide polymer (repeating unit -C═N-CH 3 ), whose most stable conformation is expected to be a helical chain. The computations used a standard contracted Gaussian orbital set at the computational levels STO-3G, 3-21G, 6-31G, and 6-31G**, and studies were made for two line-group configurations motivated by earlier work and by studies of space-filling molecular models: (1) A structure of line-group symmetry L9 5 , containing a 9-fold screw axis with atoms displaced in the axial direction by 5/9 times the lattice constant, and (2) a structure of symmetry L4 1 that had been proposed, containing a 4-fold screw axis with translation by 1/4 of the lattice constant. Full use of the line-group symmetry was employed to cause most of the computational complexity to depend only on the size of the asymmetric repeating unit. Data reported include computed bond properties, atomic charge distribution, longitudinal polarizability, band structure, and the convoluted density of states. Most features of the description were found to be insensitive to the level of computational approximation. The work also illustrates the importance of exploiting line-group symmetry to extend the range of polymer structural problems that can be treated computationally.

  14. Band structure of an electron in a kind of periodic potentials with singularities

    Science.gov (United States)

    Hai, Kuo; Yu, Ning; Jia, Jiangping

    2018-06-01

    Noninteracting electrons in some crystals may experience periodic potentials with singularities and the governing Schrödinger equation cannot be defined at the singular points. The band structure of a single electron in such a one-dimensional crystal has been calculated by using an equivalent integral form of the Schrödinger equation. Both the perturbed and exact solutions are constructed respectively for the cases of a general singular weak-periodic system and its an exactly solvable version, Kronig-Penney model. Any one of them leads to a special band structure of the energy-dependent parameter, which results in an effective correction to the previous energy-band structure and gives a new explanation for forming the band structure. The used method and obtained results could be a valuable aid in the study of energy bands in solid-state physics, and the new explanation may trigger investigation to different physical mechanism of electron band structures.

  15. Two electron Rydberg states

    International Nuclear Information System (INIS)

    Cooke, W.E.

    1981-01-01

    This paper addresses the study of two-electron Rydberg atoms. With Multichannel Quantum Defect Theory (MQDT), there is a technique for characterizing a spectra in terms of a small number of parameters. A survey of some important effects specific to two-electon Rydberg states, using primarily the alkaline earth atoms for examples, is made. The remainder of the paper deals with a discussion of the electron-electron interaction, including some of the basic points of MQDT. Energy exchange between two electrons is also addressed

  16. Electronic pairing mechanism due to band modification with increasing pair number

    International Nuclear Information System (INIS)

    Mizia, J.

    1995-01-01

    It is shown that a shift of an electron band with electron occupation number n, which is changing during the transition to the superconducting state, can lower the total energy of the system. In fact it will bring a negative contribution to the pairing potential, which is proportional to the product of the electron band shift with occupation number and the charge transfer during the transition to the superconducting state. The shift of the electron band comes from the change of stresses and the change of correlation effects in the CuO 2 plane with n, that in turn is caused by the changing oxygen concentration. This model explains the phenomenological success of Hirsch's model, which gives no explanation how the band shift in energy can give rise to superconductivity. (orig.)

  17. Band magnetism due to f-electrons

    International Nuclear Information System (INIS)

    Brodsky, M.B.; Trainor, R.J.

    1976-01-01

    Specific heat data illustrate several types of itinerant or band magnetism in actinide intermetallic compounds. The results show ferromagnetic spin fluctuations in UAl 2 with T/sub sf/ equals 25K, itinerant antiferromagnetism in NpSn 3 with T/sub N/ equals 9.5K and itinerant ferromagnetism in NpOs 2 with T/sub C/ equals 7.9K. Specific heat studies of dilute U/sub 1-x/Th/sub x/Al 2 show the theoretically predicted modifications due to impurity scattering in a spin fluctuation system. For NpSn 3 it is possible to show the BCS nature of the transition due to the gap formation

  18. Mixed State of a Dirty Two-Band Superconductor: Application to MgB2

    NARCIS (Netherlands)

    Koshelev, A.E.; Golubov, Alexandre Avraamovitch

    2003-01-01

    We investigate the vortex state in a two-band superconductor with strong intraband and weak interband electronic scattering rates. Coupled Usadel equations are solved numerically, and the distributions of the pair potentials and local densities of states are calculated for two bands at different

  19. Electron transfer from electronic excited states to sub-vacuum electron traps in amorphous ice

    International Nuclear Information System (INIS)

    Vichnevetski, E.; Bass, A.D.; Sanche, L.

    2000-01-01

    We investigate the electron stimulated yield of electronically excited argon atoms (Ar * ) from monolayer quantities of Ar deposited onto thin films of amorphous ice. Two peaks of narrow width ( - electron-exciton complex into exciton states, by the transfer of an electron into a sub-vacuum electron state within the ice film. However, the 10.7 eV feature is shifted to lower energy since electron attachment to Ar occurs within small pores of amorphous ice. In this case, the excess electron is transferred into an electron trap below the conduction band of the ice layer

  20. Terra MODIS Band 27 Electronic Crosstalk Effect and Its Removal

    Science.gov (United States)

    Sun, Junqiang; Xiong, Xiaoxiong; Madhavan, Sriharsha; Wenny, Brian

    2012-01-01

    The MODerate-resolution Imaging Spectroradiometer (MODIS) is one of the primary instruments in the NASA Earth Observing System (EOS). The first MODIS instrument was launched in December, 1999 on-board the Terra spacecraft. MODIS has 36 bands, covering a wavelength range from 0.4 micron to 14.4 micron. MODIS band 27 (6.72 micron) is a water vapor band, which is designed to be insensitive to Earth surface features. In recent Earth View (EV) images of Terra band 27, surface feature contamination is clearly seen and striping has become very pronounced. In this paper, it is shown that band 27 is impacted by electronic crosstalk from bands 28-30. An algorithm using a linear approximation is developed to correct the crosstalk effect. The crosstalk coefficients are derived from Terra MODIS lunar observations. They show that the crosstalk is strongly detector dependent and the crosstalk pattern has changed dramatically since launch. The crosstalk contributions are positive to the instrument response of band 27 early in the mission but became negative and much larger in magnitude at later stages of the mission for most detectors of the band. The algorithm is applied to both Black Body (BB) calibration and MODIS L1B products. With the crosstalk effect removed, the calibration coefficients of Terra MODIS band 27 derived from the BB show that the detector differences become smaller. With the algorithm applied to MODIS L1B products, the Earth surface features are significantly removed and the striping is substantially reduced in the images of the band. The approach developed in this report for removal of the electronic crosstalk effect can be applied to other MODIS bands if similar crosstalk behaviors occur.

  1. Electronic States in Thorium under Pressure

    DEFF Research Database (Denmark)

    Skriver, Hans Lomholt; Jan, J. P.

    1980-01-01

    We have used the local-density formalism and the atomic-sphere approximation to calculate self-consistently the electronic properties of thorium at pressures up to 400 kbar. The derived equation of state agrees very well with static pressure experiments and shock data. Below the Fermi level (EF......) the electronic band structure is formed by 7s and 6d states while the bottom of a relatively broad 5f band is positioned 0.07 Ry above EF. The calculated extremal areas of the Fermi surface and their calculated pressure dependence agree with earlier calculations and with de Haas-van Alphen measurements...

  2. Model Development for MODIS Thermal Band Electronic Crosstalk

    Science.gov (United States)

    Chang, Tiejun; Wu, Aisheng; Geng, Xu; Li, Yonghonh; Brinkman, Jake; Keller, Graziela; Xiong, Xiaoxiong

    2016-01-01

    MODerate-resolution Imaging Spectroradiometer (MODIS) has 36 bands. Among them, 16 thermal emissive bands covering a wavelength range from 3.8 to 14.4 m. After 16 years on-orbit operation, the electronic crosstalk of a few Terra MODIS thermal emissive bands developed substantial issues that cause biases in the EV brightness temperature measurements and surface feature contamination. The crosstalk effects on band 27 with center wavelength at 6.7 m and band 29 at 8.5 m increased significantly in recent years, affecting downstream products such as water vapor and cloud mask. The crosstalk effect is evident in the near-monthly scheduled lunar measurements, from which the crosstalk coefficients can be derived. The development of an alternative approach is very helpful for independent verification.In this work, a physical model was developed to assess the crosstalk impact on calibration as well as in Earth view brightness temperature retrieval. This model was applied to Terra MODIS band 29 empirically to correct the Earth brightness temperature measurements. In the model development, the detectors nonlinear response is considered. The impact of the electronic crosstalk is assessed in two steps. The first step consists of determining the impact on calibration using the on-board blackbody (BB). Due to the detectors nonlinear response and large background signal, both linear and nonlinear coefficients are affected by the crosstalk from sending bands. The second step is to calculate the effects on the Earth view brightness temperature retrieval. The effects include those from affected calibration coefficients and the contamination of Earth view measurements. This model links the measurement bias with crosstalk coefficients, detector non-linearity, and the ratio of Earth measurements between the sending and receiving bands. The correction of the electronic cross talk can be implemented empirically from the processed bias at different brightness temperature. The implementation

  3. Weyl states and Fermi arcs in parabolic bands

    Science.gov (United States)

    Doria, Mauro M.; Perali, Andrea

    2017-07-01

    Weyl fermions are shown to exist inside a parabolic band in a single electronic layer, where the kinetic energy of carriers is given by the non-relativistic Schroedinger equation. There are Fermi arcs as a direct consequence of the folding of a ring-shaped Fermi surface inside the first Brillouin zone. Our results stem from the decomposition of the kinetic energy into the sum of the square of the Weyl state, the coupling to the local magnetic field and the Rashba interaction. The Weyl fermions break the space and time reflection symmetries present in the kinetic energy, thus allowing for the onset of a weak three-dimensional magnetic field around the layer. This field brings topological stability to the current-carrying states through a Chern number. In the special limit for which the Weyl state becomes gapless, this magnetic interaction is shown to be purely attractive, thus suggesting the onset of a superconducting condensate of zero helicity states.

  4. Kinks in the σ band of graphene induced by electron-phonon coupling.

    Science.gov (United States)

    Mazzola, Federico; Wells, Justin W; Yakimova, Rositza; Ulstrup, Søren; Miwa, Jill A; Balog, Richard; Bianchi, Marco; Leandersson, Mats; Adell, Johan; Hofmann, Philip; Balasubramanian, T

    2013-11-22

    Angle-resolved photoemission spectroscopy reveals pronounced kinks in the dispersion of the σ band of graphene. Such kinks are usually caused by the combination of a strong electron-boson interaction and the cutoff in the Fermi-Dirac distribution. They are therefore not expected for the σ band of graphene that has a binding energy of more than ≈3.5 eV. We argue that the observed kinks are indeed caused by the electron-phonon interaction, but the role of the Fermi-Dirac distribution cutoff is assumed by a cutoff in the density of σ states. The existence of the effect suggests a very weak coupling of holes in the σ band not only to the π electrons of graphene but also to the substrate electronic states. This is confirmed by the presence of such kinks for graphene on several different substrates that all show a strong coupling constant of λ≈1.

  5. Bunch monitor for an S-band electron linear accelerator

    International Nuclear Information System (INIS)

    Otake, Yuji; Nakahara, Kazuo

    1991-01-01

    The measurement of bunch characteristics in an S-band electron linear accelerator is required in order to evaluate the quality of accelerated electron beams. A new-type bunch monitor has been developed which combines micro-stripline technology with an air insulator and wall-current monitoring technology. The obtained time resolution of the monitor was more than 150 ps. This result shows that the monitor can handle the bunch number of an S-band linac. The structure of the monitor is suitable for being installed in the vacuum area, since it is constructed of only metal and ceramic parts. It can therefore easily be employed in an actual machine

  6. Electron correlations in narrow energy bands: modified polar model approach

    Directory of Open Access Journals (Sweden)

    L. Didukh

    2008-09-01

    Full Text Available The electron correlations in narrow energy bands are examined within the framework of the modified form of polar model. This model permits to analyze the effect of strong Coulomb correlation, inter-atomic exchange and correlated hopping of electrons and explain some peculiarities of the properties of narrow-band materials, namely the metal-insulator transition with an increase of temperature, nonlinear concentration dependence of Curie temperature and peculiarities of transport properties of electronic subsystem. Using a variant of generalized Hartree-Fock approximation, the single-electron Green's function and quasi-particle energy spectrum of the model are calculated. Metal-insulator transition with the change of temperature is investigated in a system with correlated hopping. Processes of ferromagnetic ordering stabilization in the system with various forms of electronic DOS are studied. The static conductivity and effective spin-dependent masses of current carriers are calculated as a function of electron concentration at various DOS forms. The correlated hopping is shown to cause the electron-hole asymmetry of transport and ferromagnetic properties of narrow band materials.

  7. Multiple electron generation in a sea of electronic states

    Science.gov (United States)

    Witzel, Wayne; Shabaev, Andrew; Efros, Alexander; Hellberg, Carl; Verne, Jacobs

    2009-03-01

    In traditional bulk semiconductor photovoltaics (PVs), each photon may excite a single electron-hole, wasting excess energy beyond the band-gap as heat. In nanocrystals, multiple excitons can be generated from a single photon, enhancing the PV current. Multiple electron generation (MEG) may result from Coulombic interactions of the confined electrons. Previous investigations have been based on incomplete or over-simplified electronic-state representations. We present results of quantum simulations that include hundreds of thousands of configuration states and show how the complex dynamics, even in a closed electronic system, yields a saturated MEG effect on a femtosecond timescale. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.

  8. Reconstruction of Band Structure Induced by Electronic Nematicity in an FeSe Superconductor

    Science.gov (United States)

    Nakayama, K.; Miyata, Y.; Phan, G. N.; Sato, T.; Tanabe, Y.; Urata, T.; Tanigaki, K.; Takahashi, T.

    2014-12-01

    We have performed high-resolution angle-resolved photoemission spectroscopy on an FeSe superconductor (Tc˜8 K ), which exhibits a tetragonal-to-orthorhombic structural transition at Ts˜90 K . At low temperature, we found splitting of the energy bands as large as 50 meV at the M point in the Brillouin zone, likely caused by the formation of electronically driven nematic states. This band splitting persists up to T ˜110 K , slightly above Ts, suggesting that the structural transition is triggered by the electronic nematicity. We have also revealed that at low temperature the band splitting gives rise to a van Hove singularity within 5 meV of the Fermi energy. The present result strongly suggests that this unusual electronic state is responsible for the unconventional superconductivity in FeSe.

  9. Band Gap Modulated by Electronic Superlattice in Blue Phosphorene.

    Science.gov (United States)

    Zhuang, Jincheng; Liu, Chen; Gao, Qian; Liu, Yani; Feng, Haifeng; Xu, Xun; Wang, Jiaou; Zhao, Jijun; Dou, Shi Xue; Hu, Zhenpeng; Du, Yi

    2018-05-22

    Exploring stable two-dimensional materials with appropriate band gaps and high carrier mobility is highly desirable due to the potential applications in optoelectronic devices. Here, the electronic structures of phosphorene on a Au(111) substrate are investigated by scanning tunneling spectroscopy, angle-resolved photoemission spectroscopy (ARPES), and density functional theory (DFT) calculations. The substrate-induced phosphorene superstructure gives a superlattice potential, leading to a strong band folding effect of the sp band of Au(111) on the band structure. The band gap could be clearly identified in the ARPES results after examining the folded sp band. The value of the energy gap (∼1.1 eV) and the high charge carrier mobility comparable to that of black phosphorus, which is engineered by the tensile strain, are revealed by the combination of ARPES results and DFT calculations. Furthermore, the phosphorene layer on the Au(111) surface displays high surface inertness, leading to the absence of multilayer phosphorene. All these results suggest that the phosphorene on Au(111) could be a promising candidate, not only for fundamental research but also for nanoelectronic and optoelectronic applications.

  10. Electronic band structure of magnetic bilayer graphene superlattices

    International Nuclear Information System (INIS)

    Pham, C. Huy; Nguyen, T. Thuong; Nguyen, V. Lien

    2014-01-01

    Electronic band structure of the bilayer graphene superlattices with δ-function magnetic barriers and zero average magnetic flux is studied within the four-band continuum model, using the transfer matrix method. The periodic magnetic potential effects on the zero-energy touching point between the lowest conduction and the highest valence minibands of pristine bilayer graphene are exactly analyzed. Magnetic potential is shown also to generate the finite-energy touching points between higher minibands at the edges of Brillouin zone. The positions of these points and the related dispersions are determined in the case of symmetric potentials.

  11. Adsorbate-induced modification of electronic band structure of epitaxial Bi(111) films

    Energy Technology Data Exchange (ETDEWEB)

    Matetskiy, A.V., E-mail: mateckij@iacp.dvo.ru [Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); Bondarenko, L.V.; Tupchaya, A.Y.; Gruznev, D.V. [Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); Eremeev, S.V. [Institute of Strength Physics and Materials Science, 634021 Tomsk (Russian Federation); Tomsk State University, 634050 Tomsk (Russian Federation); Zotov, A.V. [Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); School of Natural Sciences, Far Eastern Federal University, 690950 Vladivostok (Russian Federation); Department of Electronics, Vladivostok State University of Economics and Service, 690600 Vladivostok (Russian Federation); Saranin, A.A. [Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); School of Natural Sciences, Far Eastern Federal University, 690950 Vladivostok (Russian Federation)

    2017-06-01

    Highlights: • Modification of electronic properties of ultrathin Bi films by adsorbates is demonstrated. • Due to electron doping from Cs adatoms, surface-state bands shift to higher binding energies. • As a result, only electron pockets are left in the Fermi map. • Tin acts as an acceptor dopant for Bi, shifting Fermi level upward. • As a result, only hole pockets are left in the Fermi map. - Abstract: Changes of the electronic band structure of Bi(111) films on Si(111) induced by Cs and Sn adsorption have been studied using angle-resolved photoemission spectroscopy and density functional theory calculations. It has been found that small amounts of Cs when it presents at the surface in a form of the adatom gas leads to shifting of the surface and quantum well states to the higher binding energies due to the electron donation from adsorbate to the Bi film. In contrast, adsorbed Sn dissolves into the Bi film bulk upon heating and acts as an acceptor dopant, that results in shifting of the surface and quantum well states upward to the lower binding energies. These results pave the way to manipulate with the Bi thin film electron band structure allowing to achieve a certain type of conductivity (electron or hole) with a single spin channel at the Fermi level making the adsorbate-modified Bi a reliable base for prospective spintronics applications.

  12. Kinks in the σ Band of Graphene Induced by Electron-Phonon Coupling

    DEFF Research Database (Denmark)

    Mazzola, Federico; Wells, Justin; Yakimova, Rosita

    2013-01-01

    Angle-resolved photoemission spectroscopy reveals pronounced kinks in the dispersion of the band of graphene. Such kinks are usually caused by the combination of a strong electron-boson interaction and the cutoff in the Fermi-Dirac distribution. They are therefore not expected for the band...... of graphene that has a binding energy of more than 3:5 eV. We argue that the observed kinks are indeed caused by the electron-phonon interaction, but the role of the Fermi-Dirac distribution cutoff is assumed by a cutoff in the density of states. The existence of the effect suggests a very weak coupling...

  13. Band structure and unconventional electronic topology of CoSi

    Science.gov (United States)

    Pshenay-Severin, D. A.; Ivanov, Y. V.; Burkov, A. A.; Burkov, A. T.

    2018-04-01

    Semimetals with certain crystal symmetries may possess unusual electronic structure topology, distinct from that of the conventional Weyl and Dirac semimetals. Characteristic property of these materials is the existence of band-touching points with multiple (higher than two-fold) degeneracy and nonzero Chern number. CoSi is a representative of this group of materials exhibiting the so-called ‘new fermions’. We report on an ab initio calculation of the electronic structure of CoSi using density functional methods, taking into account the spin-orbit interactions. The linearized \

  14. Electronic materials with a wide band gap: recent developments

    Directory of Open Access Journals (Sweden)

    Detlef Klimm

    2014-09-01

    Full Text Available The development of semiconductor electronics is reviewed briefly, beginning with the development of germanium devices (band gap Eg = 0.66 eV after World War II. A tendency towards alternative materials with wider band gaps quickly became apparent, starting with silicon (Eg = 1.12 eV. This improved the signal-to-noise ratio for classical electronic applications. Both semiconductors have a tetrahedral coordination, and by isoelectronic alternative replacement of Ge or Si with carbon or various anions and cations, other semiconductors with wider Eg were obtained. These are transparent to visible light and belong to the group of wide band gap semiconductors. Nowadays, some nitrides, especially GaN and AlN, are the most important materials for optical emission in the ultraviolet and blue regions. Oxide crystals, such as ZnO and β-Ga2O3, offer similarly good electronic properties but still suffer from significant difficulties in obtaining stable and technologically adequate p-type conductivity.

  15. Quantifying electronic band interactions in van der Waals materials using angle-resolved reflected-electron spectroscopy.

    Science.gov (United States)

    Jobst, Johannes; van der Torren, Alexander J H; Krasovskii, Eugene E; Balgley, Jesse; Dean, Cory R; Tromp, Rudolf M; van der Molen, Sense Jan

    2016-11-29

    High electron mobility is one of graphene's key properties, exploited for applications and fundamental research alike. Highest mobility values are found in heterostructures of graphene and hexagonal boron nitride, which consequently are widely used. However, surprisingly little is known about the interaction between the electronic states of these layered systems. Rather pragmatically, it is assumed that these do not couple significantly. Here we study the unoccupied band structure of graphite, boron nitride and their heterostructures using angle-resolved reflected-electron spectroscopy. We demonstrate that graphene and boron nitride bands do not interact over a wide energy range, despite their very similar dispersions. The method we use can be generally applied to study interactions in van der Waals systems, that is, artificial stacks of layered materials. With this we can quantitatively understand the 'chemistry of layers' by which novel materials are created via electronic coupling between the layers they are composed of.

  16. Indication for a K/sup π/ = 0- octupole band in 150Nd from electron scattering

    International Nuclear Information System (INIS)

    Creswell, C.; Hirsch, A.; Bertozzi, W.; Heisenberg, J.; Kowalski, S.; Sargent, C.P.; Turchinetz, W.; Dieperink, A.

    1978-01-01

    Recent electron scattering results on the 0.850 MeV level of 150 Nd, when analyzed in terms of the interacting boson model, are inconsistent with the interpretation of this level as a pure J/sup π/(K) = 2 + (0) state. Very recent (n,n'γ) work has shown this level to be a 1 - , 2 + doublet. Assuming this level to be the band head of a ''K/sup π/ = 0 - '' octupole band, a simple model is used to predict electron scattering form factors for the 0.850 MeV state and a 3 - octupole level observed at 0.931 MeV. Comparison is made between these predicted form factors and recent electron scattering data

  17. The electronic structure of core states under extreme compressions

    International Nuclear Information System (INIS)

    Straub, G.K.

    1992-01-01

    At normal density and for modest compressions, the electronic structure of a metal can be accurately described by treating the conduction electrons and their interactions with the usual methods of band theory. The core electrons remain essentially the same as for an isolated free atom and do not participate in the bonding forces responsible for creating a condensed phase. As the density increases, the core electrons begin to ''see'' one another as the overlap of the tails of wave functions can no longer be neglected. The electronic structure of the core electrons is responsible for an effective repulsive interaction that eventually becomes free-electron-like at very high compressions. The electronic structure of the interacting core electrons may be treated in a simple manner using the Atomic Surface Method (ASM). The ASM is a first-principles treatment of the electronic structure involving a rigorous integration of the Schroedinger equation within the atomic-sphere approximation. Solid phase wave functions are constructed from isolated atom wave functions and the band width W l and the center of gravity of the band C l are obtained from simple formulas. The ASM can also utilize analytic forms of the atomic wave functions and thus provide direct functional dependence of various aspects of the electronic structure. Of particular use in understanding the behavior of the core electrons, the ASM provides the ability to analytically determine the density dependence of the band widths and positions. The process whereby core states interact with one another is best viewed as the formation of narrow electron bands formed from atomic states. As the core-core overlap increases, the bands increase in width and mean energy. In Sec.3 this picture is further developed and from the ASM one obtains the analytic dependence on density of the relative motion of the different bands. Also in Sec. 3 is a discussion of the transition to free electron bands

  18. Ab-initio electronic band structure calculations for beryllium chalcogenides

    International Nuclear Information System (INIS)

    Kalpana, G.; Pari, G.; Yousuf, Mohammad

    1997-01-01

    The first principle tight-binding linear muffin-tin orbital method within the local density approximation (LDA) has been used to calculate the ground state properties, structural phase transition and pressure dependence of band gap of BeS, BeSe and BeTe. We have calculated the energy-volume relations for these compounds in the B3 and B8 phases. The calculated lattice parameters, bulk modulus and the pressure-volume relation were found to be in good agreement with the recent experimental results. The calculated B3→B8 structural transition pressure for BeS, BeSe and BeTe agree well with the recent experimental results. Our calculations show that these compounds are indirect band gap (Γ-X) semiconductors at ambient conditions. The calculated band gap values are found to be underestimated by 20-30% which is due to the usage of LDA. After the structural transition to the B8 phase, BeS continues to be indirect band gap semiconductors and ultimately above 100 GPa it metallises, BeSe and BeTe are metallic at the B3→B8 structural transition. (author)

  19. Diode laser spectroscopy of oxygen electronic band at 760 nm

    International Nuclear Information System (INIS)

    Lucchesini, A.; De Rosa, M.; Gozzini, S.

    1998-01-01

    Collisional broadening and shift coefficients have been obtained by analyzing the line shapes of oxygen absorptions in the 760 nm electronic band. By using a diode laser spectrometer with commercially available etherostructure Al x Ga 1-x As diode lasers operating in 'free-running mode', line shape parameters have been collected at room temperature by varying the gas pressure. A systematic study has been carried on seven absorption lines by scanning the diode laser emission wavelength around the gas resonances. The weak absorption lines have been detected by using the wavelength modulation (WM) spectroscopy technique with second-harmonic detection

  20. Dirac Cones, Topological Edge States, and Nontrivial Flat Bands in Two-Dimensional Semiconductors with a Honeycomb Nanogeometry

    Directory of Open Access Journals (Sweden)

    E. Kalesaki

    2014-01-01

    Full Text Available We study theoretically two-dimensional single-crystalline sheets of semiconductors that form a honeycomb lattice with a period below 10 nm. These systems could combine the usual semiconductor properties with Dirac bands. Using atomistic tight-binding calculations, we show that both the atomic lattice and the overall geometry influence the band structure, revealing materials with unusual electronic properties. In rocksalt Pb chalcogenides, the expected Dirac-type features are clouded by a complex band structure. However, in the case of zinc-blende Cd-chalcogenide semiconductors, the honeycomb nanogeometry leads to rich band structures, including, in the conduction band, Dirac cones at two distinct energies and nontrivial flat bands and, in the valence band, topological edge states. These edge states are present in several electronic gaps opened in the valence band by the spin-orbit coupling and the quantum confinement in the honeycomb geometry. The lowest Dirac conduction band has S-orbital character and is equivalent to the π-π^{⋆} band of graphene but with renormalized couplings. The conduction bands higher in energy have no counterpart in graphene; they combine a Dirac cone and flat bands because of their P-orbital character. We show that the width of the Dirac bands varies between tens and hundreds of meV. These systems emerge as remarkable platforms for studying complex electronic phases starting from conventional semiconductors. Recent advancements in colloidal chemistry indicate that these materials can be synthesized from semiconductor nanocrystals.

  1. Relativistic band-structure calculations for electronic properties of actinide dioxides

    International Nuclear Information System (INIS)

    Maehira, Takahiro; Hotta, Takashi

    2007-01-01

    Energy band structures of actinide dioxides AnO 2 (An=Th, U, Np, and Pu) are investigated by a relativistic linear augmented-plane-wave method with the exchange-correlation potential in a local density approximation (LDA). It is found in common that the energy bands in the vicinity of the Fermi level are mainly due to the hybridization between actinide 5f and oxygen 2p electrons. By focusing on the crystalline electric field states, we point out the problem in the application of the LDA to AnO 2

  2. Valence band electronic structure of Pd based ternary chalcogenide superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Lohani, H. [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India); Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400085 (India); Mishra, P. [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India); Goyal, R.; Awana, V.P.S. [National Physical Laboratory(CSIR), Dr. K. S. Krishnan Road, New Delhi 110012 (India); Sekhar, B.R., E-mail: sekhar@iopb.res.in [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India); Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400085 (India)

    2016-12-15

    Highlights: • VB Photoemission study and DFT calculations on Pd based ternary superconductors are presented. • Nb{sub 2}Pd{sub 0.95}S{sub 5} shows a temperature dependent pseudogap. • VB spectral features of ternary superconductors are correlated to their structural geometry. - Abstract: We present a comparative study of the valence band electronic structure of Pd based ternary chalcogenide superconductors Nb{sub 2}Pd{sub 0.95}S{sub 5}, Ta{sub 2}Pd{sub 0.97}S{sub 6} and Ta{sub 2}Pd{sub 0.97}Te{sub 6} using experimental photoemission spectroscopy and density functional based theoretical calculations. We observe a qualitatively similarity between valence band (VB) spectra of Nb{sub 2}Pd{sub 0.95}S{sub 5} and Ta{sub 2}Pd{sub 0.97}S{sub 6}. Further, we find a pseudogap feature in Nb{sub 2}Pd{sub 0.95}S{sub 5} at low temperature, unlike other two compounds. We have correlated the structural geometry with the differences in VB spectra of these compounds. The different atomic packing in these compounds could vary the strength of inter-orbital hybridization among various atoms which leads to difference in their electronic structure as clearly observed in our DOS calculations.

  3. Positron and electron energy bands in several ionic crystals using restricted Hartree-Fock method

    Science.gov (United States)

    Kunz, A. B.; Waber, J. T.

    1981-08-01

    Using a restricted Hartree-Fock formalism and suitably localized and symmetrized wave functions, both the positron and electron energy bands were calculated for NaF, MgO and NiO. The lowest positron state at Γ 1 lies above the vacuum level and negative work functions are predicted. Positron annihilation rates were calculated and found to be in good agreement with measured lifetimes.

  4. Electronic band structure and optical properties of the cubic, Sc, Y and La hydride systems

    International Nuclear Information System (INIS)

    Peterman, D.J.

    1980-01-01

    Electronic band structure calculations are used to interpret the optical spectra of the cubic Sc, Y and La hydride systems. Self-consistent band calculations of ScH 2 and YH 2 were carried out. The respective joint densities of states are computed and compared to the dielectric functions determined from the optical measurements. Additional calculations were performed in which the Fermi level or band gap energies are rigidly shifted by a small energy increment. These calculations are then used to simulate the derivative structure in thermomodulation spectra and relate the origin of experimental interband features to the calculated energy bands. While good systematic agreement is obtained for several spectral features, the origin of low-energy interband transitions in YH 2 cannot be explained by these calculated bands. A lattice-size-dependent premature occupation of octahedral sites by hydrogen atoms in the fcc metal lattice is suggested to account for this discrepancy. Various non-self-consistent calculations are used to examine the effect of such a premature occupation. Measurements of the optical absorptivity of LaH/sub x/ with 1.6 2 lattice. These experimental results also suggest that, in contrast to recent calculations, LaH 3 is a small-band-gap semiconductor

  5. Band-gap creation by icosahedral symmetry in nearly-free-electron materials

    International Nuclear Information System (INIS)

    Carlsson, A.E.

    1993-01-01

    A series of numerical electronic density-of-states calculations is performed for rational approximants to a model one-electron potential based on icosahedrally arranged plane-wave components. It is found that high-order approximants can have band gaps even if the low-order approximants do not; furthermore, the magnitude of the gap increases with the order of the approximant. The results are interpreted via a two- and three-wave analysis of the energy eigenvalues at the pseudo-Jones-zone faces and edges. It is also found that the mechanism of band-gap reduction in the rational approximants is the presence of a small density of gap states. An analytic calculation shows that these gap states result from a splitting of threefold and pseudothreefold states at the valence-band edge when the icosahedral symmetry is broken. The splitting is proportional to the error with which the ratio between the approximant indices approximates τ, the golden mean. Finally, an application to the AlCuLi system is presented

  6. Effect of density of state on isotope effect exponent of two-band superconductors

    International Nuclear Information System (INIS)

    Udomsamuthirun, P.; Kumvongsa, C.; Burakorn, A.; Changkanarth, P.; Yoksan, S.

    2005-01-01

    The exact formula of T c 's equation and the isotope effect exponent of two-band s-wave superconductors in weak-coupling limit are derived by considering the influence of two kinds of density of state: constant and van Hove singularity. The paring interaction in each band consisted of two parts: the electron-phonon interaction and non-electron-phonon interaction are included in our model. We find that the interband interaction of electron-phonon show more effect on isotope exponent than the intraband interaction and the isotope effect exponent with constant density of state can fit to experimental data, MgB 2 and high-T c superconductor, better than van Hove singularity density of state

  7. Electron momentum spectroscopy of aniline taking account of nuclear dynamics in the initial electronic ground state

    International Nuclear Information System (INIS)

    Farasat, M; Golzan, M M; Shojaei, S H R; Morini, F; Deleuze, M S

    2016-01-01

    The electronic structure, electron binding energy spectrum and (e, 2e) momentum distributions of aniline have been theoretically predicted at an electron impact energy of 1.500 keV on the basis of Born–Oppenheimer molecular dynamical simulations, in order to account for thermally induced nuclear motions in the initial electronic ground state. Most computed momentum profiles are rather insensitive to thermally induced alterations of the molecular structure, with the exception of the profiles corresponding to two ionization bands at electron binding energies comprised between ∼10.0 and ∼12.0 eV (band C) and between ∼16.5 and ∼20.0 eV (band G). These profiles are found to be strongly influenced by nuclear dynamics in the electronic ground state, especially in the low momentum region. The obtained results show that thermal averaging smears out most generally the spectral fingerprints that are induced by nitrogen inversion. (paper)

  8. Band width and multiple-angle valence-state mapping of diamond

    Energy Technology Data Exchange (ETDEWEB)

    Jimenez, I.; Terminello, L.J.; Sutherland, D.G.J. [Lawrence Berkeley National Lab., CA (United States)] [and others

    1997-04-01

    The band width may be considered the single most important parameter characterizing the electronic structure of a solid. The ratio of band width and Coulomb repulsion determines how correlated or delocalized an electron system is. Some of the most interesting solids straddle the boundary between localized and delocalized, e.g. the high-temperature superconductors. The bulk of the band calculations available today is based on local density functional (DF) theory. Even though the Kohn-Sham eigenvalues from that theory do not represent the outcome of a band-mapping experiment, they are remarkably similar to the bands mapped via photoemission. Strictly speaking, one should use an excited state calculation that takes the solid`s many-body screening response to the hole created in photoemission into account. Diamond is a useful prototype semiconductor because of its low atomic number and large band width, which has made it a long-time favorite for testing band theory. Yet, the two experimental values of the band width of diamond have error bars of {+-}1 eV and differ by 3.2 eV. To obtain an accurate valence band width for diamond, the authors use a band-mapping method that collects momentum distributions instead of the usual energy distributions. This method has undergone extensive experimental and theoretical tests in determining the band width of lithium fluoride. An efficient, imaging photoelectron spectrometer is coupled with a state-of-the-art undulator beam line at the Advanced Light Source to allow collection of a large number of data sets. Since it takes only a few seconds to take a picture of the photoelectrons emitted into a 84{degrees} cone, the authors can use photon energies as high as 350 eV where the cross section for photoemission from the valence band is already quite low, but the emitted photoelectrons behave free-electron-like. This make its much easier to locate the origin of the inter-band transitions in momentum space.

  9. Band width and multiple-angle valence-state mapping of diamond

    International Nuclear Information System (INIS)

    Jimenez, I.; Terminello, L.J.; Sutherland, D.G.J.

    1997-01-01

    The band width may be considered the single most important parameter characterizing the electronic structure of a solid. The ratio of band width and Coulomb repulsion determines how correlated or delocalized an electron system is. Some of the most interesting solids straddle the boundary between localized and delocalized, e.g. the high-temperature superconductors. The bulk of the band calculations available today is based on local density functional (DF) theory. Even though the Kohn-Sham eigenvalues from that theory do not represent the outcome of a band-mapping experiment, they are remarkably similar to the bands mapped via photoemission. Strictly speaking, one should use an excited state calculation that takes the solid's many-body screening response to the hole created in photoemission into account. Diamond is a useful prototype semiconductor because of its low atomic number and large band width, which has made it a long-time favorite for testing band theory. Yet, the two experimental values of the band width of diamond have error bars of ±1 eV and differ by 3.2 eV. To obtain an accurate valence band width for diamond, the authors use a band-mapping method that collects momentum distributions instead of the usual energy distributions. This method has undergone extensive experimental and theoretical tests in determining the band width of lithium fluoride. An efficient, imaging photoelectron spectrometer is coupled with a state-of-the-art undulator beam line at the Advanced Light Source to allow collection of a large number of data sets. Since it takes only a few seconds to take a picture of the photoelectrons emitted into a 84 degrees cone, the authors can use photon energies as high as 350 eV where the cross section for photoemission from the valence band is already quite low, but the emitted photoelectrons behave free-electron-like. This make its much easier to locate the origin of the inter-band transitions in momentum space

  10. Nontrivial topological states on a Möbius band

    NARCIS (Netherlands)

    Beugeling, W.; Quelle, A.; Morais Smith, C.

    2014-01-01

    In the field of topological insulators, the topological properties of quantum states in samples with simple geometries, such as a cylinder or a ribbon, have been classified and understood during the past decade. Here we extend these studies to a Möbius band and argue that its lack of orientability

  11. Electronic band structure in porous silicon studied by photoluminescence and photoluminescence excitation spectroscopy

    International Nuclear Information System (INIS)

    Lee, Ki-Won; Kim, Young-You

    2004-01-01

    In this research, we used photoluminescence (PL) and photoluminescence excitation (PLE) to visualize the electronic band structure in porous silicon (PS). From the combined results of the PLE measurements at various PL emission energies and the PL measurements under excitation at various PLE absorption energies, we infer that three different electronic band structures, originating from different luminescent origins, give rise to the PL spectrum. Through either thermal activation or diffusive transfer, excited carriers are moved to each of the electronic band structures.

  12. Warm-Up Activities of Middle and High School Band Directors Participating in State-Level Concert Band Assessments

    Science.gov (United States)

    Ward, Justin P.; Hancock, Carl B.

    2016-01-01

    The purpose of this study was to examine the warm-ups chosen by concert band directors participating in state-level performance assessments. We observed 29 middle and high school bands and coded the frequency and duration of warm-up activities and behaviors. Results indicated that most bands rehearsed music and played scales, long tones, and…

  13. Electronic band structure, optical, dynamical and thermodynamic properties of cesium chloride (CsCl from first-principles

    Directory of Open Access Journals (Sweden)

    Bingol Suat

    2015-01-01

    Full Text Available The geometric structural optimization, electronic band structure, total density of states for valence electrons, density of states for phonons, optical, dynamical, and thermodynamical features of cesium chloride have been investigated by linearized augmented plane wave method using the density functional theory under the generalized gradient approximation. Ground state properties of cesium chloride are studied. The calculated ground state properties are consistent with experimental results. Calculated band structure indicates that the cesium chloride structure has an indirect band gap value of 5.46 eV and is an insulator. From the obtained phonon spectra, the cesium chloride structure is dynamically stable along the various directions in the Brillouin zone. Temperature dependent thermodynamic properties are studied using the harmonic approximation model.

  14. Surface-electronic-state effects in electron emission from the Be(0001) surface

    International Nuclear Information System (INIS)

    Archubi, C. D.; Gravielle, M. S.; Silkin, V. M.

    2011-01-01

    We study the electron emission produced by swift protons impinging grazingly on a Be(0001) surface. The process is described within a collisional formalism using the band-structure-based (BSB) approximation to represent the electron-surface interaction. The BSB model provides an accurate description of the electronic band structure of the solid and the surface-induced potential. Within this approach we derive both bulk and surface electronic states, with these latter characterized by a strong localization at the crystal surface. We found that such surface electronic states play an important role in double-differential energy- and angle-resolved electron emission probabilities, producing noticeable structures in the electron emission spectra.

  15. Surface-electronic-state effects in electron emission from the Be(0001) surface

    Energy Technology Data Exchange (ETDEWEB)

    Archubi, C. D. [Instituto de Astronomia y Fisica del Espacio, casilla de correo 67, sucursal 28, C1428EGA, Buenos Aires (Argentina); Gravielle, M. S. [Instituto de Astronomia y Fisica del Espacio, casilla de correo 67, sucursal 28, C1428EGA, Buenos Aires (Argentina); Departamento de Fisica, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, Buenos Aires (Argentina); Silkin, V. M. [Donostia International Physics Center, E-20018 San Sebastian (Spain); Departamento de Fisica de Materiales, Facultad de Ciencias Quimicas, Universidad del Pais Vasco, Apartado 1072, E-20080 San Sebastian (Spain); IKERBASQUE, Basque Foundation for Science, E-48011 Bilbao (Spain)

    2011-07-15

    We study the electron emission produced by swift protons impinging grazingly on a Be(0001) surface. The process is described within a collisional formalism using the band-structure-based (BSB) approximation to represent the electron-surface interaction. The BSB model provides an accurate description of the electronic band structure of the solid and the surface-induced potential. Within this approach we derive both bulk and surface electronic states, with these latter characterized by a strong localization at the crystal surface. We found that such surface electronic states play an important role in double-differential energy- and angle-resolved electron emission probabilities, producing noticeable structures in the electron emission spectra.

  16. Intrinsic states and rotational bands in 177Pt

    International Nuclear Information System (INIS)

    Dracoulis, G.D.; Fabricius, B.; Bark, R.A.; Stuchbery, A.E.; Popescu, D.G.; Kibedi, T.

    1989-11-01

    The 149 Sm ( 32 S,4n) 177 Pt reaction has been used to populate excited states in the neutron-deficient nucleus 177 Pt. Rotational bands based on intrinsic states assigned to the 1/2-[521], 5/2-[521] and (mixed) 7/2+ [633] Nilsson configurations have been observed. In contrast to the neighbou-ring even isotope 176 Pt, anomalies attributed to shape co-existence at low spin have not been observed. Implications for the deformation of 177 Pt are discussed together with the systematics of intrinsic states in this region, and alignments and other properties of N=99 nuclei. 37 refs., 15 figs., 3 tabs

  17. Introduction to solid state electronics

    CERN Document Server

    Wang, FFY

    1989-01-01

    This textbook is specifically tailored for undergraduate engineering courses offered in the junior year, providing a thorough understanding of solid state electronics without relying on the prerequisites of quantum mechanics. In contrast to most solid state electronics texts currently available, with their generalized treatments of the same topics, this is the first text to focus exclusively and in meaningful detail on introductory material. The original text has already been in use for 10 years. In this new edition, additional problems have been added at the end of most chapters. These proble

  18. Electronic band structure of lithium, sodium and potassium fluorides

    International Nuclear Information System (INIS)

    Jouanin, C.; Albert, J.P.; Gout, C.

    1975-01-01

    A mixed tight-binding, pseudopotential method is proposed to calculate the energy band structure of large-gap crystals and is tested here on LiF, NaF and KF. Three-centre terms are included in the determination of the valence bands by the tight-binding method and for the conduction bands we use a pseudopotential model proposed by Bassani and Giuliano, modified for the positive ions. By taking into account the polarization corrections, transitions calculated from the energy band structures are compared with experimental data and the agreement is generally good

  19. Electron affinity and excited states of methylglyoxal

    Science.gov (United States)

    Dauletyarov, Yerbolat; Dixon, Andrew R.; Wallace, Adam A.; Sanov, Andrei

    2017-07-01

    Using photoelectron imaging spectroscopy, we characterized the anion of methylglyoxal (X2A″ electronic state) and three lowest electronic states of the neutral methylglyoxal molecule: the closed-shell singlet ground state (X1A'), the lowest triplet state (a3A″), and the open-shell singlet state (A1A″). The adiabatic electron affinity (EA) of the ground state, EA(X1A') = 0.87(1) eV, spectroscopically determined for the first time, compares to 1.10(2) eV for unsubstituted glyoxal. The EAs (adiabatic attachment energies) of two excited states of methylglyoxal were also determined: EA(a3A″) = 3.27(2) eV and EA(A1A″) = 3.614(9) eV. The photodetachment of the anion to each of these two states produces the neutral species near the respective structural equilibria; hence, the a3A″ ← X2A″ and A1A″ ← X2A″ photodetachment transitions are dominated by intense peaks at their respective origins. The lowest-energy photodetachment transition, on the other hand, involves significant geometry relaxation in the X1A' state, which corresponds to a 60° internal rotation of the methyl group, compared to the anion structure. Accordingly, the X1A' ← X2A″ transition is characterized as a broad, congested band, whose vertical detachment energy, VDE = 1.20(4) eV, significantly exceeds the adiabatic EA. The experimental results are in excellent agreement with the ab initio predictions using several equation-of-motion methodologies, combined with coupled-cluster theory.

  20. Strain localization band width evolution by electronic speckle pattern interferometry strain rate measurement

    Energy Technology Data Exchange (ETDEWEB)

    Guelorget, Bruno [Institut Charles Delaunay-LASMIS, Universite de technologie de Troyes, FRE CNRS 2848, 12 rue Marie Curie, B.P. 2060, 10010 Troyes Cedex (France)], E-mail: bruno.guelorget@utt.fr; Francois, Manuel; Montay, Guillaume [Institut Charles Delaunay-LASMIS, Universite de technologie de Troyes, FRE CNRS 2848, 12 rue Marie Curie, B.P. 2060, 10010 Troyes Cedex (France)

    2009-04-15

    In this paper, electronic speckle pattern interferometry strain rate measurements are used to quantify the width of the strain localization band, which occurs when a sheet specimen is submitted to tension. It is shown that the width of this band decreases with increasing strain. Just before fracture, this measured width is about five times wider than the shear band and the initial sheet thickness.

  1. Determination of conduction and valence band electronic structure ...

    Indian Academy of Sciences (India)

    shifts in the rutile Ti d-band to lower energy with respect to anatase, i.e., ... requires excitation with UV light due to its wide band ... RIXS maps were compared to the theoretical results .... optical methods are insufficient, such as dark samples.

  2. Flat electronic bands in fractal-kagomé network and the effect of perturbation

    Energy Technology Data Exchange (ETDEWEB)

    Nandy, Atanu, E-mail: atanunandy1989@gmail.com; Chakrabarti, Arunava, E-mail: arunava-chakrabarti@yahoo.co.in [Department of Physics, University of Kalyani, Kalyani, West Bengal - 741235 (India)

    2016-05-06

    We demonstrate an analytical prescription of demonstrating the flat band [FB] states in a fractal incorporated kagomé type network that can give rise to a countable infinity of flat non-dispersive eigenstates with a multitude of localization area. The onset of localization can, in principle, be delayed in space by an appropriate choice of energy regime. The length scale, at which the onset of localization for each mode occurs, can be tuned at will following the formalism developed within the framework of real space renormalization group. This scheme leads to an exact determination of energy eigenvalue for which one can have dispersionless flat electronic bands. Furthermore, we have shown the effect ofuniform magnetic field for the same non-translationally invariant network model that has ultimately led to an‘apparent invisibility’ of such staggered localized states and to generate absolutely continuous sub-bands in the energy spectrum and again an interesting re-entrant behavior of those FB states.

  3. Electronic transport properties of Ti-impurity band in Si

    Energy Technology Data Exchange (ETDEWEB)

    Olea, J; Gonzalez-Diaz, G; Pastor, D; Martil, I [Departamento de Fisica Aplicada III (Electricidad y Electronica), Facultad de Ciencias, Fisicas, Universidad Complutense, E-28040 Madrid (Spain)

    2009-04-21

    In this paper we show that pulsed laser melted high dose implantation of Ti in Si, above the Mott transition, produces an impurity band (IB) in this semiconductor. Using the van der Pauw method and Hall effect measurements we find strong laminated conductivity at the implanted layer and a temperature dependent decoupling between the Ti implanted layer (TIL) and the substrate. The conduction mechanism from the TIL to the substrate shows blocking characteristics that could be well explained through IB theory. Using the ATLAS code we can estimate the energetic position of the IB at 0.36 eV from the conduction band, the density of holes in this band which is closely related to the Ti atomic density and the hole mobility in this band. Band diagrams of the structure at low and high temperatures are also simulated in the ATLAS framework. The simulation obtained is fully coherent with experimental results.

  4. Electronic transport properties of Ti-impurity band in Si

    International Nuclear Information System (INIS)

    Olea, J; Gonzalez-Diaz, G; Pastor, D; Martil, I

    2009-01-01

    In this paper we show that pulsed laser melted high dose implantation of Ti in Si, above the Mott transition, produces an impurity band (IB) in this semiconductor. Using the van der Pauw method and Hall effect measurements we find strong laminated conductivity at the implanted layer and a temperature dependent decoupling between the Ti implanted layer (TIL) and the substrate. The conduction mechanism from the TIL to the substrate shows blocking characteristics that could be well explained through IB theory. Using the ATLAS code we can estimate the energetic position of the IB at 0.36 eV from the conduction band, the density of holes in this band which is closely related to the Ti atomic density and the hole mobility in this band. Band diagrams of the structure at low and high temperatures are also simulated in the ATLAS framework. The simulation obtained is fully coherent with experimental results.

  5. Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes

    Energy Technology Data Exchange (ETDEWEB)

    Chen Feng [Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Euaruksakul, Chanan; Himpsel, F J; Lagally, Max G [University of Wisconsin-Madison, Madison, WI 53706 (United States); Liu Zheng; Liu Feng, E-mail: lagally@engr.wisc.edu [University of Utah, Salt Lake City, UT 84112 (United States)

    2011-08-17

    Strain changes the band structure of semiconductors. We use x-ray absorption spectroscopy to study the change in the density of conduction band (CB) states when silicon is uniaxially strained along the [1 0 0] and [1 1 0] directions. High stress can be applied to silicon nanomembranes, because their thinness allows high levels of strain without fracture. Strain-induced changes in both the sixfold degenerate {Delta} valleys and the eightfold degenerate L valleys are determined quantitatively. The uniaxial deformation potentials of both {Delta} and L valleys are directly extracted using a strain tensor appropriate to the boundary conditions, i.e., confinement in the plane in the direction orthogonal to the straining direction, which correspond to those of strained CMOS in commercial applications. The experimentally determined deformation potentials match the theoretical predictions well. We predict electron mobility enhancement created by strain-induced CB modifications.

  6. Electronic band structure study of colossal magnetoresistance in Tl 2Mn 2O 7

    Science.gov (United States)

    Seo, D.-K.; Whangbo, M.-H.; Subramanian, M. A.

    1997-02-01

    The electronic structure of Tl 2Mn 2O 7 was examined by performing tight binding band calculations. The overlap between the Mn t 2g- and Tl 6 s-block bands results in a partial filling of the Tl 6 s-block bands. The associated Fermi surface consists of 12 cigar-shape electron pockets with each electron pocket about {1}/{1000} of the first Brillouin zone in size. The Tl 6 s-block bands have orbital contributions from the Mn atoms, and the carrier density is very low. These are important for the occurrence of a colossal magnetoresistance in Tl 2Mn 2O 7.

  7. Rietveld analysis and electronic bands structure on Tc superconductors systems

    International Nuclear Information System (INIS)

    Aldea, N.; Tiusan, C. V.; Sandu, V.

    1999-01-01

    A procedure for simultaneous refinement of structural and micro-structural disorder parameters for polycrystalline YBa 2 Cu 3 O 7-x system is proposed. It is based on Rietveld method combined with Fourier analysis for broadened peaks Another purpose of this paper consists in electronic structure determination studied by using the self-consistent Tight Binding Linear Muffin-Tin Orbital Atomic Spheres Approximation TB-LMTO-ASA methods. The Rietveld method uses an analytical function that describes the profiles, usually pseudo-Voigt (pV) or Pearson VII (PVII). The parameters of the analytical profiles describe its amplitude, position and peak shape. The full width at half maximum (FWHM) is supposed to vary with the diffraction angle in agreement with the Caglioti, Paoletti and Ricci's relationship. The best structural parameters are determined in the least squares sense by the minimisation a classical residual using the Marquardt method. In this case, the peak profiles were modelled by the pseudo-Voigt function corrected by the instrumental asymmetry. The physical information obtained are: scale factor, lattice parameters, atomic position and displacements, atomic occupation numbers, temperature factor (isotropy or anisotropy), preferred orientation parameter, crystalline size and micro-strain along different crystallographic directions, distributions of crystallite size and micro-strain functions. This procedure was implemented on computer code and it has a friendly graphical interface based on pull down menus technique. From the experimental point of view the X-ray diffraction data were collected using a horizontal powder diffractometer in the Bragg-Brentano (BB) geometry with a Ni filtered CuKα, λ = 1.54178 A, at room temperature using a DRON 2 set-up. The diffraction profiles were measured with a proportional gas detector, a single channel pulse-height discrimination and a standard associated counting circuit. The electronic band calculations are based on the TB

  8. Optical density of states in ultradilute GaAsN alloy: Coexistence of free excitons and impurity band of localized and delocalized states

    Energy Technology Data Exchange (ETDEWEB)

    Bhuyan, Sumi; Pal, Bipul; Bansal, Bhavtosh, E-mail: bhavtosh@iiserkol.ac.in [Indian Institute of Science Education and Research Kolkata, Mohanpur Campus, Nadia 741252, West Bengal (India); Das, Sanat K.; Dhar, Sunanda [Department of Electronic Science, University of Calcutta, 92 A.P.C. Road, Kolkata 700009 (India)

    2014-07-14

    Optically active states in liquid phase epitaxy-grown ultra-dilute GaAsN are studied. The feature-rich low temperature photoluminescence spectrum has contributions from excitonic band states of the GaAsN alloy, and two types of defect states—localized and extended. The degree of delocalization for extended states both within the conduction and defect bands, characterized by the electron temperature, is found to be similar. The degree of localization in the defect band is analyzed by the strength of the phonon replicas. Stronger emission from these localized states is attributed to their giant oscillator strength.

  9. Contributions of oxygen vacancies and titanium interstitials to band-gap states of reduced titania

    Science.gov (United States)

    Li, Jingfeng; Lazzari, Rémi; Chenot, Stéphane; Jupille, Jacques

    2018-01-01

    The spectroscopic fingerprints of the point defects of titanium dioxide remain highly controversial. Seemingly indisputable experiments lead to conflicting conclusions in which oxygen vacancies and titanium interstitials are alternately referred to as the primary origin of the Ti 3 d band-gap states. We report on experiments performed by electron energy loss spectroscopy whose key is the direct annealing of only the very surface of rutile TiO2(110 ) crystals and the simultaneous measurement of its temperature via the Bose-Einstein loss/gain ratio. By surface preparations involving reactions with oxygen and water vapor, in particular, under electron irradiation, vacancy- and interstitial-related band-gap states are singled out. Off-specular measurements reveal that both types of defects contribute to a unique charge distribution that peaks in subsurface layers with a common dispersive behavior.

  10. Correlated electron motion, flux states and superconductivity

    International Nuclear Information System (INIS)

    Lederer, P.; Poilblanc, D.; Rice, T.K.

    1989-01-01

    This paper discusses how, when the on-site correlation is strong, electrons can move by usual hopping only on to empty sites but they can exchange position with their neighbors by a correlated motion. The phase in the former process is fixed and it favors Bloch states. When the concentration of empty sites is small then the latter process dominates and one is free to introduce a phase provided it is chosen to be the same for ↑ and ↓-spin electrons. Since for a partly filled band of non-interacting electrons the introduction of a uniform commensurate flux lowers the energy, the correlated motion can lead to a physical mechanism to generate flux states. These states have a collective gauge variable which is the same for ↑ and ↓-spins and superconducting properties are obtained by expanding around the optimum gauge determined by the usual kinetic energy term. If this latter term has singularities at special fillings then these may affect the superconducting properties

  11. Band-to-Band Tunneling-Dominated Thermo-Enhanced Field Electron Emission from p-Si/ZnO Nanoemitters.

    Science.gov (United States)

    Huang, Zhizhen; Huang, Yifeng; Xu, Ningsheng; Chen, Jun; She, Juncong; Deng, Shaozhi

    2018-06-13

    Thermo-enhancement is an effective way to achieve high performance field electron emitters, and enables the individually tuning on the emission current by temperature and the electron energy by voltage. The field emission current from metal or n-doped semiconductor emitter at a relatively lower temperature (i.e., current saturation was observed in the thermo-enhanced field emission measurements. The emission current density showed about ten-time enhancement (from 1.31 to 12.11 mA/cm 2 at 60.6 MV/m) by increasing the temperature from 323 to 623 K. The distinctive performance did not agree with the interband excitation mechanism but well-fit to the band-to-band tunneling model. The strong thermo-enhancement was proposed to be benefit from the increase of band-to-band tunneling probability at the surface portion of the p-Si/ZnO nanojunction. This work provides promising cathode for portable X-ray tubes/panel, ionization vacuum gauges and low energy electron beam lithography, in where electron-dose control at a fixed energy is needed.

  12. Electron states in semiconductor quantum dots

    International Nuclear Information System (INIS)

    Dhayal, Suman S.; Ramaniah, Lavanya M.; Ruda, Harry E.; Nair, Selvakumar V.

    2014-01-01

    In this work, the electronic structures of quantum dots (QDs) of nine direct band gap semiconductor materials belonging to the group II-VI and III-V families are investigated, within the empirical tight-binding framework, in the effective bond orbital model. This methodology is shown to accurately describe these systems, yielding, at the same time, qualitative insights into their electronic properties. Various features of the bulk band structure such as band-gaps, band curvature, and band widths around symmetry points affect the quantum confinement of electrons and holes. These effects are identified and quantified. A comparison with experimental data yields good agreement with the calculations. These theoretical results would help quantify the optical response of QDs of these materials and provide useful input for applications

  13. Solid-State Powered X-band Accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Othman, Mohamed A.K. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Nann, Emilio A. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Dolgashev, Valery A. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Tantawi, Sami [SLAC National Accelerator Lab., Menlo Park, CA (United States); Neilson, Jeff [SLAC National Accelerator Lab., Menlo Park, CA (United States)

    2017-03-06

    In this report we disseminate the hot test results of an X-band 100-W solid state amplifier chain for linear accelerator (linac) applications. Solid state power amplifiers have become increasingly attractive solutions for achieving high power in radar and maritime applications. Here the performance of solid state amplifiers when driving an RF cavity is investigated. Commercially available, matched and fully-packaged GaN on SiC HEMTs are utilized, comprising a wideband driver stage and two power stages. The amplifier chain has a high poweradded- efficiency and is able to supply up to ~1.2 MV/m field gradient at 9.2 GHz in a simple test cavity, with a peak power exceeding 100 W. These findings set forth the enabling technology for solid-state powered linacs.

  14. Experimental and theoretical investigations of the electronic band structure of metal-organic frameworks of HKUST-1 type

    Energy Technology Data Exchange (ETDEWEB)

    Gu, Zhi-Gang [Institut für Funktionelle Grenzflächen (IFG), Karlsruher Institut für Technologie (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, 350002 Fuzhou (China); Heinke, Lars, E-mail: Lars.Heinke@KIT.edu; Wöll, Christof [Institut für Funktionelle Grenzflächen (IFG), Karlsruher Institut für Technologie (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Neumann, Tobias; Wenzel, Wolfgang; Li, Qiang; Fink, Karin [Institute of Nanotechnology (INT), Karlsruher Institut für Technologie (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Gordan, Ovidiu D.; Zahn, Dietrich R. T. [Semiconductor Physics, Technische Universität Chemnitz, 09107 Chemnitz (Germany)

    2015-11-02

    The electronic properties of metal-organic frameworks (MOFs) are increasingly attracting the attention due to potential applications in sensor techniques and (micro-) electronic engineering, for instance, as low-k-dielectric in semiconductor technology. Here, the band gap and the band structure of MOFs of type HKUST-1 are studied in detail by means of spectroscopic ellipsometry applied to thin surface-mounted MOF films and by means of quantum chemical calculations. The analysis of the density of states, the band structure, and the excitation spectrum reveal the importance of the empty Cu-3d orbitals for the electronic properties of HKUST-1. This study shows that, in contrast to common belief, even in the case of this fairly “simple” MOF, the excitation spectra cannot be explained by a superposition of “intra-unit” excitations within the individual building blocks. Instead, “inter-unit” excitations also have to be considered.

  15. Experimental and theoretical investigations of the electronic band structure of metal-organic frameworks of HKUST-1 type

    Science.gov (United States)

    Gu, Zhi-Gang; Heinke, Lars; Wöll, Christof; Neumann, Tobias; Wenzel, Wolfgang; Li, Qiang; Fink, Karin; Gordan, Ovidiu D.; Zahn, Dietrich R. T.

    2015-11-01

    The electronic properties of metal-organic frameworks (MOFs) are increasingly attracting the attention due to potential applications in sensor techniques and (micro-) electronic engineering, for instance, as low-k-dielectric in semiconductor technology. Here, the band gap and the band structure of MOFs of type HKUST-1 are studied in detail by means of spectroscopic ellipsometry applied to thin surface-mounted MOF films and by means of quantum chemical calculations. The analysis of the density of states, the band structure, and the excitation spectrum reveal the importance of the empty Cu-3d orbitals for the electronic properties of HKUST-1. This study shows that, in contrast to common belief, even in the case of this fairly "simple" MOF, the excitation spectra cannot be explained by a superposition of "intra-unit" excitations within the individual building blocks. Instead, "inter-unit" excitations also have to be considered.

  16. Experimental and theoretical investigations of the electronic band structure of metal-organic frameworks of HKUST-1 type

    International Nuclear Information System (INIS)

    Gu, Zhi-Gang; Heinke, Lars; Wöll, Christof; Neumann, Tobias; Wenzel, Wolfgang; Li, Qiang; Fink, Karin; Gordan, Ovidiu D.; Zahn, Dietrich R. T.

    2015-01-01

    The electronic properties of metal-organic frameworks (MOFs) are increasingly attracting the attention due to potential applications in sensor techniques and (micro-) electronic engineering, for instance, as low-k-dielectric in semiconductor technology. Here, the band gap and the band structure of MOFs of type HKUST-1 are studied in detail by means of spectroscopic ellipsometry applied to thin surface-mounted MOF films and by means of quantum chemical calculations. The analysis of the density of states, the band structure, and the excitation spectrum reveal the importance of the empty Cu-3d orbitals for the electronic properties of HKUST-1. This study shows that, in contrast to common belief, even in the case of this fairly “simple” MOF, the excitation spectra cannot be explained by a superposition of “intra-unit” excitations within the individual building blocks. Instead, “inter-unit” excitations also have to be considered

  17. Helical quantum states in HgTe quantum dots with inverted band structures.

    Science.gov (United States)

    Chang, Kai; Lou, Wen-Kai

    2011-05-20

    We investigate theoretically the electron states in HgTe quantum dots (QDs) with inverted band structures. In sharp contrast to conventional semiconductor quantum dots, the quantum states in the gap of the HgTe QD are fully spin-polarized and show ringlike density distributions near the boundary of the QD and spin-angular momentum locking. The persistent charge currents and magnetic moments, i.e., the Aharonov-Bohm effect, can be observed in such a QD structure. This feature offers us a practical way to detect these exotic ringlike edge states by using the SQUID technique.

  18. State Counting for Excited Bands of the Fractional Quantum Hall Effect: Exclusion Rules for Bound Excitons

    Science.gov (United States)

    Coimbatore Balram, Ajit; Wójs, Arkadiusz; Jain, Jainendra

    2014-03-01

    Exact diagonalization studies have revealed that the energy spectrum of interacting electrons in the lowest Landau level splits, non-perturbatively, into bands. The theory of nearly free composite fermions (CFs) has been shown to be valid for the lowest band, and thus to capture the low temperature physics, but it over-predicts the number of states for the excited bands. We explain the state counting of higher bands in terms of composite fermions with an infinitely strong short range interaction between a CF particle and a CF hole. This interaction, the form of which we derive from the microscopic CF theory, eliminates configurations containing certain tightly bound CF excitons. With this modification, the CF theory reproduces, for all well-defined excited bands, an exact counting for ν > 1 / 3 , and an almost exact counting for ν The resulting insight clarifies that the corrections to the nearly free CF theory are not thermodynamically significant at sufficiently low temperatures, thus providing a microscopic explanation for why it has proved successful for the analysis of the various properties of the CF Fermi sea. NSF grants DMR-1005536 and DMR-0820404, Polish NCN grant 2011/01/B/ST3/04504 and EU Marie Curie Grant PCIG09-GA-2011-294186, Research Computing and Cyberinfrastructure, PSU and Wroclaw Centre for Networking and Supercomputing

  19. Band rejection filter for measurement of electron cyclotron emission during electron cyclotron heating

    International Nuclear Information System (INIS)

    Iwase, Makoto; Ohkubo, Kunizo; Kubo, Shin; Idei, Hiroshi.

    1996-05-01

    For the measurement of electron cyclotron emission from the high temperature plasma, a band rejection filter in the range of 40-60 GHz is designed to reject the 53.2 GHz signal with large amplitude from the gyrotron for the purpose of plasma electron heating. The filter developed with ten sets of three quarters-wavelength coupled by TE 111 mode of tunable resonant cavity has rejection of 50 dB and 3 dB bandwidth of 500 MHz. The modified model of Tschebysheff type for the prediction of rejection is proposed. It is confirmed that the measured rejection as a function of frequency agrees well with the experimental results for small coupling hole, and also clarified that the rejection ratio increases for the large coupling hole. (author)

  20. Band-structure-based collisional model for electronic excitations in ion-surface collisions

    International Nuclear Information System (INIS)

    Faraggi, M.N.; Gravielle, M.S.; Alducin, M.; Silkin, V.M.; Juaristi, J.I.

    2005-01-01

    Energy loss per unit path in grazing collisions with metal surfaces is studied by using the collisional and dielectric formalisms. Within both theories we make use of the band-structure-based (BSB) model to represent the surface interaction. The BSB approach is based on a model potential and provides a precise description of the one-electron states and the surface-induced potential. The method is applied to evaluate the energy lost by 100 keV protons impinging on aluminum surfaces at glancing angles. We found that when the realistic BSB description of the surface is used, the energy loss obtained from the collisional formalism agrees with the dielectric one, which includes not only binary but also plasmon excitations. The distance-dependent stopping power derived from the BSB model is in good agreement with available experimental data. We have also investigated the influence of the surface band structure in collisions with the Al(100) surface. Surface-state contributions to the energy loss and electron emission probability are analyzed

  1. Theoretical study of electronic absorption spectroscopy of propadienylidene molecule vis-â-vis the observed diffuse interstellar bands

    International Nuclear Information System (INIS)

    Reddy, Samala Nagaprasad; Mahapatra, S.

    2012-01-01

    Highlights: ► Theoretical study of spectroscopy and dynamics of electronically excited l-C 3 H 2 . ► Construction of ab initio electronic potential energy and diabatic coupling surfaces. ► First principles study of nuclear dynamics on excited electronic states. ► Findings reveal l-C 3 H 2 is a potential molecular carrier of diffuse interstellar bands. ► Electronically excited l-C 3 H 2 decays by ultrafast nonradiative internal conversion. -- Abstract: Observation of broad and diffuse interstellar bands (DIBs) at 4881 Å and 5440 Å assigned to the optical absorption spectrum of Y-shaped propadienylidene (H 2 C=C=C:) molecule is theoretically examined in this paper. This molecule apparently absorbs in the same wavelength region as the observed DIBs and was suggested to be a potential carrier of these DIBs. This assignment mostly relied on the experimental data from radioastronomy and laboratory measurements. Motivated by these available experimental data we attempt here a theoretical study and investigate the detailed electronic structure and nuclear dynamics underlying the electronic absorption bands of propadienylidene molecule. Our results show that this molecule indeed absorbs in the wavelength region of the recorded DIBs. Strong nonadiabatic coupling between its energetically low-lying electronic states plays major role, initiates ultrafast internal conversion and contributes to the spectral broadening. Theoretical findings are finally compared with the available experimental and theoretical data and discussed in connection with the recorded DIBs.

  2. Valence band electronic structure and band alignment of LaAlO{sub 3}/SrTiO{sub 3}(111) heterointerfaces

    Energy Technology Data Exchange (ETDEWEB)

    Gabel, J.; Scheiderer, P.; Zapf, M.; Schuetz, P.; Sing, M.; Claessen, R. [Physikalisches Institut and Roentgen Center for Complex Material Systems (RCCM), Universitaet Wuerzburg (Germany); Schlueter, C.; Lee, T.L. [Diamond Light Source, Didcot (United Kingdom)

    2015-07-01

    As in the famous LaAlO{sub 3}(LAO)/SrTiO{sub 3}(STO) (001) a two-dimensional electron system (2DES) also forms at the interface between LAO and STO in (111) orientation. A distinct feature of the (111) interface is its peculiar real space topology. Each bilayer represents a buckled honeycomb lattice similar to graphene which is known theoretically to host various topologically non-trivial states. Bilayer STO in proximity to the interface can be regarded as a three-orbital generalization of graphene with enhanced electron correlations making it a promising candidate for the realization of strongly correlated topological phases. We have investigated the electronic structure of the LAO/STO (111) heterostructure in relation to the oxygen vacancy concentration which we can control by synchrotron light irradiation and oxygen dosing. With hard X-ray photoemission we study the core levels, whereas resonant soft X-ray photoemission is used to probe the interfacial valence band (VB) states. Two VB features are found: a peak at the Fermi level associated with the 2DES and in-gap states at higher binding energies attributed to oxygen vacancies. By varying the oxygen vacancy contribution we can tune the emergence of the VB states and engineer the interfacial band alignment.

  3. Electronic states in a quantum lens

    International Nuclear Information System (INIS)

    Rodriguez, Arezky H.; Trallero-Giner, C.; Ulloa, S. E.; Marin-Antuna, J.

    2001-01-01

    We present a model to find analytically the electronic states in self-assembled quantum dots with a truncated spherical cap (''lens'') geometry. A conformal analytical image is designed to map the quantum dot boundary into a dot with semispherical shape. The Hamiltonian for a carrier confined in the quantum lens is correspondingly mapped into an equivalent operator and its eigenvalues and eigenfunctions for the corresponding Dirichlet problem are analyzed. A modified Rayleigh-Schro''dinger perturbation theory is presented to obtain analytical expressions for the energy levels and wave functions as a function of the spherical cap height b and radius a of the circular cross section. Calculations for a hard wall confinement potential are presented, and the effect of decreasing symmetry on the energy values and eigenfunctions of the lens-shape quantum dot is studied. As the degeneracies of a semicircular geometry are broken for b≠a, our perturbation approach allows tracking of the split states. Energy states and electronic wave functions with m=0 present the most pronounced influence on the reduction of the lens height. The method and expressions presented here can be straightforwardly extended to deal with more general Hamiltonians, including strains and valence-band coupling effects in Group III--V and Group II--VI self-assembled quantum dots

  4. Theoretical and experimental differential cross sections for electron impact excitation of the electronic bands of furfural

    Science.gov (United States)

    Jones, D. B.; Neves, R. F. C.; Lopes, M. C. A.; da Costa, R. F.; do N. Varella, M. T.; Bettega, M. H. F.; Lima, M. A. P.; García, G.; Limão-Vieira, P.; Brunger, M. J.

    2016-03-01

    We report results from a joint experimental and theoretical investigation into electron scattering from the important industrial species furfural (C5H4O2). Specifically, differential cross sections (DCSs) have been measured and calculated for the electron-impact excitation of the electronic states of C5H4O2. The measurements were carried out at energies in the range 20-40 eV, and for scattered-electron angles between 10° and 90°. The energy resolution of those experiments was typically ˜80 meV. Corresponding Schwinger multichannel method with pseudo-potential calculations, for energies between 6-50 eV and with and without Born-closure, were also performed for a sub-set of the excited electronic-states that were accessed in the measurements. Those calculations were undertaken at the static exchange plus polarisation-level using a minimum orbital basis for single configuration interaction (MOB-SCI) approach. Agreement between the measured and calculated DCSs was qualitatively quite good, although to obtain quantitative accord, the theory would need to incorporate even more channels into the MOB-SCI. The role of multichannel coupling on the computed electronic-state DCSs is also explored in some detail.

  5. Theoretical and experimental differential cross sections for electron impact excitation of the electronic bands of furfural

    International Nuclear Information System (INIS)

    Jones, D. B.; Neves, R. F. C.; Lopes, M. C. A.; Costa, R. F. da; Varella, M. T. do N; Bettega, M. H. F.; Lima, M. A. P.; García, G.

    2016-01-01

    We report results from a joint experimental and theoretical investigation into electron scattering from the important industrial species furfural (C 5 H 4 O 2 ). Specifically, differential cross sections (DCSs) have been measured and calculated for the electron-impact excitation of the electronic states of C 5 H 4 O 2 . The measurements were carried out at energies in the range 20–40 eV, and for scattered-electron angles between 10° and 90°. The energy resolution of those experiments was typically ∼80 meV. Corresponding Schwinger multichannel method with pseudo-potential calculations, for energies between 6–50 eV and with and without Born-closure, were also performed for a sub-set of the excited electronic-states that were accessed in the measurements. Those calculations were undertaken at the static exchange plus polarisation-level using a minimum orbital basis for single configuration interaction (MOB-SCI) approach. Agreement between the measured and calculated DCSs was qualitatively quite good, although to obtain quantitative accord, the theory would need to incorporate even more channels into the MOB-SCI. The role of multichannel coupling on the computed electronic-state DCSs is also explored in some detail.

  6. Theoretical and experimental differential cross sections for electron impact excitation of the electronic bands of furfural

    Energy Technology Data Exchange (ETDEWEB)

    Jones, D. B. [School of Chemical and Physical Sciences, Flinders University, GPO Box 2100, Adelaide, SA 5001 (Australia); Neves, R. F. C. [Instituto Federal do Sul de Minas Gerais, Câmpus Poços de Caldas, Minas Gerais (Brazil); Departamento de Física, UFJF, Juiz de Fora, Minas Gerais 36036-900 (Brazil); Lopes, M. C. A. [Departamento de Física, UFJF, Juiz de Fora, Minas Gerais 36036-900 (Brazil); Costa, R. F. da [Centro de Ciências Naturais e Humanas, Universidade Federal do ABC, Santo André, São Paulo 09210-580 (Brazil); Instituto de Física “Gleb Wataghin,” Universidade Estadual de Campinas, Campinas, São Paulo 13083-859 (Brazil); Varella, M. T. do N [Instituto de Física, Universidade de São Paulo, CP 66318, 05315-970 São Paulo (Brazil); Bettega, M. H. F. [Departamento de Física, Universidade Federal do Paraná, CP 19044, Curitiba, Paraná 81531-990 (Brazil); Lima, M. A. P., E-mail: maplima@ifi.unicamp.br [Instituto de Física “Gleb Wataghin,” Universidade Estadual de Campinas, Campinas, São Paulo 13083-859 (Brazil); García, G. [Instituto de Física Fundamental, CSIC, Serrano 113-bis, 28006 Madrid (Spain); and others

    2016-03-28

    We report results from a joint experimental and theoretical investigation into electron scattering from the important industrial species furfural (C{sub 5}H{sub 4}O{sub 2}). Specifically, differential cross sections (DCSs) have been measured and calculated for the electron-impact excitation of the electronic states of C{sub 5}H{sub 4}O{sub 2}. The measurements were carried out at energies in the range 20–40 eV, and for scattered-electron angles between 10° and 90°. The energy resolution of those experiments was typically ∼80 meV. Corresponding Schwinger multichannel method with pseudo-potential calculations, for energies between 6–50 eV and with and without Born-closure, were also performed for a sub-set of the excited electronic-states that were accessed in the measurements. Those calculations were undertaken at the static exchange plus polarisation-level using a minimum orbital basis for single configuration interaction (MOB-SCI) approach. Agreement between the measured and calculated DCSs was qualitatively quite good, although to obtain quantitative accord, the theory would need to incorporate even more channels into the MOB-SCI. The role of multichannel coupling on the computed electronic-state DCSs is also explored in some detail.

  7. Hydrogen production by Tuning the Photonic Band Gap with the Electronic Band Gap of TiO2

    KAUST Repository

    Waterhouse, G. I. N.

    2013-10-10

    Tuning the photonic band gap (PBG) to the electronic band gap (EBG) of Au/TiO2 catalysts resulted in considerable enhancement of the photocatalytic water splitting to hydrogen under direct sunlight. Au/TiO2 (PBG-357 nm) photocatalyst exhibited superior photocatalytic performance under both UV and sunlight compared to the Au/TiO2 (PBG-585 nm) photocatalyst and both are higher than Au/TiO2 without the 3 dimensionally ordered macro-porous structure materials. The very high photocatalytic activity is attributed to suppression of a fraction of electron-hole recombination route due to the co-incidence of the PBG with the EBG of TiO2 These materials that maintain their activity with very small amount of sacrificial agents (down to 0.5 vol.% of ethanol) are poised to find direct applications because of their high activity, low cost of the process, simplicity and stability.

  8. Hydrogen production by Tuning the Photonic Band Gap with the Electronic Band Gap of TiO2

    KAUST Repository

    Waterhouse, G. I. N.; Wahab, A. K.; Al-Oufi, M.; Jovic, V.; Anjum, Dalaver H.; Sun-Waterhouse, D.; Llorca, J.; Idriss, H.

    2013-01-01

    Tuning the photonic band gap (PBG) to the electronic band gap (EBG) of Au/TiO2 catalysts resulted in considerable enhancement of the photocatalytic water splitting to hydrogen under direct sunlight. Au/TiO2 (PBG-357 nm) photocatalyst exhibited superior photocatalytic performance under both UV and sunlight compared to the Au/TiO2 (PBG-585 nm) photocatalyst and both are higher than Au/TiO2 without the 3 dimensionally ordered macro-porous structure materials. The very high photocatalytic activity is attributed to suppression of a fraction of electron-hole recombination route due to the co-incidence of the PBG with the EBG of TiO2 These materials that maintain their activity with very small amount of sacrificial agents (down to 0.5 vol.% of ethanol) are poised to find direct applications because of their high activity, low cost of the process, simplicity and stability.

  9. Centrifugal stretching along the ground state band of 168Hf

    International Nuclear Information System (INIS)

    Costin, A.; Pietralla, N.; Reese, M.; Moeller, O.; Ai, H.; Casten, R. F.; Heinz, A.; McCutchan, E. A.; Meyer, D. A.; Qian, J.; Werner, V.; Dusling, K.; Fitzpatrick, C. R.; Guerdal, G.; Petkov, P.; Rainovski, G.

    2009-01-01

    The lifetimes of the J π =4 + , 6 + , 8 + , and 10 + levels along the ground state band in 168 Hf were measured by means of the recoil distance Doppler shift (RDDS) method using the New Yale Plunger Device (NYPD) and the SPEEDY detection array at Wright Nuclear Structure Laboratory of Yale University. Excited states in 168 Hf were populated using the 124 Sn( 48 Ti,4n) fusion evaporation reaction. The new lifetime values are sufficiently precise to clearly prove the increase of quadrupole deformation as a function of angular momentum in the deformed nucleus 168 Hf. The data agree with the predictions from the geometrical confined β-soft (CBS) rotor model that involves centrifugal stretching in a soft potential

  10. Giant modulation of the electronic band gap of carbon nanotubes by dielectric screening

    NARCIS (Netherlands)

    Aspitarte, Lee; McCulley, Daniel R.; Bertoni, Andrea; Island, J.O.; Ostermann, Marvin; Rontani, Massimo; Steele, G.A.; Minot, Ethan D.

    2017-01-01

    Carbon nanotubes (CNTs) are a promising material for high-performance electronics beyond silicon. But unlike silicon, the nature of the transport band gap in CNTs is not fully understood. The transport gap in CNTs is predicted to be strongly driven by electron-electron (e-e) interactions and

  11. Planar C-Band Antenna with Electronically Controllable Switched Beams

    Directory of Open Access Journals (Sweden)

    Mariano Barba

    2009-01-01

    Full Text Available The design, manufacturing, and measurements of a switchable-beam antenna at 3.5 GHz for WLL or Wimax base station antennas in planar technology are presented. This antenna performs a discrete beam scan of a 60∘ sector in azimuth and can be easily upgraded to 5 or more steps. The switching capabilities have been implemented by the inclusion of phase shifters based on PIN diodes in the feed network following a strategy that allows the reduction of the number of switches compared to a classic design. The measurements show that the design objectives have been achieved and encourage the application of the acquired experience in antennas for space applications, such as X-band SAR and Ku-band DBS.

  12. Measurement of the band gap by reflection electron energy loss spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Vos, Maarten, E-mail: maarten.vos@anu.edu.au [Electronic Materials Engineering Department, Research School of Physics and Engineering, The Australian National University, Canberra 0200 (Australia); King, Sean W. [Logic Technology Development, Intel Corporation, Hillsboro, OR 97124 (United States); French, Benjamin L. [Ocotillo Materials Laboratory, Intel Corporation, Chandler, AZ 85248 (United States)

    2016-10-15

    Highlights: • Semiconductors are measured (without surface preparation) using REELS. • At low beam energies it is difficult to measure band gap due to surface impurities. • At very high energies it is difficult to measure band gap due to recoil effect. • At intermediate energies (around 5 keV) one obtains a good estimate of the band gap. - Abstract: We investigate the possibilities of measuring the band gap of a variety of semiconductors and insulators by reflection electron energy loss spectroscopy without additional surface preparation. The band gap is a bulk property, whereas reflection energy loss spectroscopy is generally considered a surface sensitive technique. By changing the energy of the incoming electrons, the degree of surface sensitivity can be varied. Here, we present case studies to determine the optimum condition for the determination of the band gap. At very large incoming electron energies recoil effects interfere with the band gap determination, whereas at very low energies surface effects are obscuring the band gap without surface preparation. Using an incoming energy of 5 keV a reasonable estimate of the band gap is obtained in most cases.

  13. Measurement of the band gap by reflection electron energy loss spectroscopy

    International Nuclear Information System (INIS)

    Vos, Maarten; King, Sean W.; French, Benjamin L.

    2016-01-01

    Highlights: • Semiconductors are measured (without surface preparation) using REELS. • At low beam energies it is difficult to measure band gap due to surface impurities. • At very high energies it is difficult to measure band gap due to recoil effect. • At intermediate energies (around 5 keV) one obtains a good estimate of the band gap. - Abstract: We investigate the possibilities of measuring the band gap of a variety of semiconductors and insulators by reflection electron energy loss spectroscopy without additional surface preparation. The band gap is a bulk property, whereas reflection energy loss spectroscopy is generally considered a surface sensitive technique. By changing the energy of the incoming electrons, the degree of surface sensitivity can be varied. Here, we present case studies to determine the optimum condition for the determination of the band gap. At very large incoming electron energies recoil effects interfere with the band gap determination, whereas at very low energies surface effects are obscuring the band gap without surface preparation. Using an incoming energy of 5 keV a reasonable estimate of the band gap is obtained in most cases.

  14. Spin-dependent electron-phonon coupling in the valence band of single-layer WS2

    DEFF Research Database (Denmark)

    Hinsche, Nicki Frank; Ngankeu, Arlette S.; Guilloy, Kevin

    2017-01-01

    The absence of inversion symmetry leads to a strong spin-orbit splitting of the upper valence band of semiconducting single-layer transition-metal dichalchogenides such as MoS2 or WS2. This permits a direct comparison of the electron-phonon coupling strength in states that only differ by their spin....... Here, the electron-phonon coupling in the valence band maximum of single-layer WS2 is studied by first-principles calculations and angle-resolved photoemission. The coupling strength is found to be drastically different for the two spin-split branches, with calculated values of λK=0.0021 and 0.......40 for the upper and lower spin-split valence band of the freestanding layer, respectively. This difference is somewhat reduced when including scattering processes involving the Au(111) substrate present in the experiment but it remains significant, in good agreement with the experimental results....

  15. Ka-Band Electronically Steered CubeSat Antenna, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — Kymeta Government Solutions (KGS) designed, analyzed, built, tested, and delivered a small, lightweight, low-cost, low-power electronically steered Ka-band prototype...

  16. Tunneling emission of electrons from semiconductors' valence bands in high electric fields

    International Nuclear Information System (INIS)

    Kalganov, V. D.; Mileshkina, N. V.; Ostroumova, E. V.

    2006-01-01

    Tunneling emission currents of electrons from semiconductors to vacuum (needle-shaped GaAs photodetectors) and to a metal (silicon metal-insulator-semiconductor diodes with a tunneling-transparent insulator layer) are studied in high and ultrahigh electric fields. It is shown that, in semiconductors with the n-type conductivity, the major contribution to the emission current is made by the tunneling emission of electrons from the valence band of the semiconductor, rather than from the conduction band

  17. Experimental Study of Electronic Quantum Interference, Photonic Crystal Cavity, Photonic Band Edge Effects for Optical Amplification

    Science.gov (United States)

    2016-01-26

    AFRL-RV-PS- AFRL-RV-PS- TR-2016-0003 TR-2016-0003 EXPERIMENTAL STUDY OF ELECTRONIC QUANTUM INTERFERENCE , PHOTONIC CRYSTAL CAVITY, PHOTONIC BAND...EDGE EFFECTS FOR OPTICAL AMPLIFICATION Shawn-Yu Lin Rensselaer Polytechnic Institute 110 8th Street Troy, New York 12180 26 Jan 2016 Final Report...2014 – 11 Jan 2016 4. TITLE AND SUBTITLE Experimental Study of Electronic Quantum Interference , Photonic Crystal Cavity, Photonic Band Edge Effects

  18. Formation of Electron Strings in Narrow Band Polar Semiconductors

    Science.gov (United States)

    Kusmartsev, F. V.

    2000-01-01

    We show that linear electron strings may arise in polar semiconductors. A single string consists of M spinless fermions trapped by an extended polarization well of a cigar shape. Inside the string the particles are free although they interact with each other via Coulomb forces. The strings arise as a result of an electronic phase separation associated with an instability of small adiabatic polarons. We have found the length of the string which depends on dielectric constants of semiconductors. The appearance of these electron strings may have an impact on the effect of stripe formation observed in a variety of high- Tc experiments.

  19. Electron scattering from the octupole band in 238U

    International Nuclear Information System (INIS)

    Hirsch, A.; Creswell, C.; Bertozzi, W.; Heisenberg, J.; Hynes, M.V.; Kowalski, S.; Miska, H.; Norum, B.; Rad, F.N.; Sargent, C.P.; Sasanuma, T.; Turchinetz, W.

    1978-01-01

    A simple model for nuclear surface vibrations in permanently deformed nuclei does well in reproducing electron scattering cross sections of rotational levels built on a K/sup π/= 0 - intrinsic octupole vibration in 238 U

  20. Differential cross sections for electron impact excitation of the electronic bands of phenol

    Energy Technology Data Exchange (ETDEWEB)

    Neves, R. F. C. [School of Chemical and Physical Sciences, Flinders University, GPO Box 2100, Adelaide SA 5001 (Australia); Instituto Federal do Sul de Minas Gerais, Campus Poços de Caldas, Minas Gerais (Brazil); Departamento de Física, UFJF, Juiz de Fora, Minas Gerais (Brazil); Jones, D. B. [School of Chemical and Physical Sciences, Flinders University, GPO Box 2100, Adelaide SA 5001 (Australia); Lopes, M. C. A.; Nixon, K. L. [Departamento de Física, UFJF, Juiz de Fora, Minas Gerais (Brazil); Silva, G. B. da [School of Chemical and Physical Sciences, Flinders University, GPO Box 2100, Adelaide SA 5001 (Australia); Universidade Federal de Mato Grosso, Barra do Garças, Mato Grosso (Brazil); Duque, H. V. [School of Chemical and Physical Sciences, Flinders University, GPO Box 2100, Adelaide SA 5001 (Australia); Departamento de Física, UFJF, Juiz de Fora, Minas Gerais (Brazil); Oliveira, E. M. de; Lima, M. A. P. [Instituto de Física “Gleb Wataghin,” Universidade Estadual de Campinas, 13083-859 Campinas, São Paulo (Brazil); Costa, R. F. da [Centro de Ciências Naturais e Humanas, Universidade Federal do ABC, 09210-580 Santo André, São Paulo (Brazil); Varella, M. T. do N. [Instituto de Física, Universidade de São Paulo, CP 66318, 05315-970 São Paulo (Brazil); Bettega, M. H. F. [Departamento de Física, Universidade Federal do Paraná, CP 19044, 81531-990 Curitiba, Paraná (Brazil); and others

    2015-03-14

    We report results from a joint theoretical and experimental investigation into electron scattering from the important organic species phenol (C{sub 6}H{sub 5}OH). Specifically, differential cross sections (DCSs) have been measured and calculated for the electron-impact excitation of the electronic states of C{sub 6}H{sub 5}OH. The measurements were carried out at energies in the range 15–40 eV, and for scattered-electron angles between 10{sup ∘} and 90{sup ∘}. The energy resolution of those experiments was typically ∼80 meV. Corresponding Schwinger multichannel method with pseudo-potentials calculations, with and without Born-closure, were also performed for a sub-set of the excited electronic-states that were accessed in the measurements. Those calculations were conducted at the static exchange plus polarisation (SEP)-level using a minimum orbital basis for single configuration interaction (MOBSCI) approach. Agreement between the measured and calculated DCSs was typically fair, although to obtain quantitative accord, the theory would need to incorporate even more channels into the MOBSCI.

  1. Ballistic-electron-emission spectroscopy of AlxGa1-xAs/GaAs heterostructures: Conduction-band offsets, transport mechanisms, and band-structure effects

    International Nuclear Information System (INIS)

    OShea, J.J.; Brazel, E.G.; Rubin, M.E.; Bhargava, S.; Chin, M.A.; Narayanamurti, V.

    1997-01-01

    We report an extensive investigation of semiconductor band-structure effects in single-barrier Al x Ga 1-x As/GaAs heterostructures using ballistic-electron-emission spectroscopy (BEES). The transport mechanisms in these single-barrier structures were studied systematically as a function of temperature and Al composition over the full compositional range (0≤x≤1). The initial (Γ) BEES thresholds for Al x Ga 1-x As single barriers with 0≤x≤0.42 were extracted using a model which includes the complete transmission probability of the metal-semiconductor interface and the semiconductor heterostructure. Band offsets measured by BEES are in good agreement with previous measurements by other techniques which demonstrates the accuracy of this technique. BEES measurements at 77 K give the same band-offset values as at room temperature. When a reverse bias is applied to the heterostructures, the BEES thresholds shift to lower voltages in good agreement with the expected bias-induced band-bending. In the indirect band-gap regime (x>0.45), spectra show a weak ballistic-electron-emission microscopy current contribution due to intervalley scattering through Al x Ga 1-x As X valley states. Low-temperature spectra show a marked reduction in this intervalley current component, indicating that intervalley phonon scattering at the GaAs/Al x Ga 1-x As interface produces a significant fraction of thisX valley current. A comparison of the BEES thresholds with the expected composition dependence of the Al x Ga 1-x As Γ, L, and X points yields good agreement over the entire composition range. copyright 1997 The American Physical Society

  2. Imaging quasiperiodic electronic states in a synthetic Penrose tiling

    Science.gov (United States)

    Collins, Laura C.; Witte, Thomas G.; Silverman, Rochelle; Green, David B.; Gomes, Kenjiro K.

    2017-06-01

    Quasicrystals possess long-range order but lack the translational symmetry of crystalline solids. In solid state physics, periodicity is one of the fundamental properties that prescribes the electronic band structure in crystals. In the absence of periodicity and the presence of quasicrystalline order, the ways that electronic states change remain a mystery. Scanning tunnelling microscopy and atomic manipulation can be used to assemble a two-dimensional quasicrystalline structure mapped upon the Penrose tiling. Here, carbon monoxide molecules are arranged on the surface of Cu(111) one at a time to form the potential landscape that mimics the ionic potential of atoms in natural materials by constraining the electrons in the two-dimensional surface state of Cu(111). The real-space images reveal the presence of the quasiperiodic order in the electronic wave functions and the Fourier analysis of our results links the energy of the resonant states to the local vertex structure of the quasicrystal.

  3. Band resolution of optical spectra of solvated electrons in water, alcohols, and tetrahydrofuran

    International Nuclear Information System (INIS)

    Jou, F.-Y.; Freeman, G.R.

    1979-01-01

    The optical absorption spectra of solvated electrons in water, alcohols, and tetrahydrofuran are empirically resolved into two Gaussian bands and a continuum tail. The first Gaussian band covers most of the low energy side of the spectrum. The second Gaussian band lies at an energy slightly above that of the absorption maximum of the total spectrum. With the exception of tert-butyl alcohol, in water and alcohols the following were observed: (a) the first Gaussian bands have the same half-width, but the oscillator strength in water is about double that in an alcohol; (b) the second Gaussian bands have similar half-widths and oscillator strengths; (c) the continuum tails have similar half-widths, yet that in water possesses only about one third as much oscillator strength as the one in alcohol. In tert-butyl alcohol and tetrahydrofuran the first Gaussian band and the continuum tail each carry nearly half of the total oscillator strength. (author)

  4. State-selective electron capture

    International Nuclear Information System (INIS)

    Dunford, R.W.; Liu, C.J.; Berry, H.G.; Pardo, R.C.; Raphaelian, M.L.A.

    1988-01-01

    We report results from a new atomic physics program using the Argonne PII ECR ion source which is being built as part of the upgrade of the Argonne Tandem-Linear Accelerator (ATLAS). Our initial experiments have been aimed at studying state-selective electron capture in ion-atom collisions using the technique of Photon Emission Spectroscopy. We are extending existing cross section measurements at low energy ( 6+ and O 7+ on He and H 2 targets in the energy range from 1-105 keV/amu. We also present uv spectra obtained in collisions of O 6+ , O 5+ and N 5+ on a sodium target. 4 refs., 2 figs., 1 tab

  5. Application of mid-infrared free-electron laser tuned to amide bands for dissociation of aggregate structure of protein.

    Science.gov (United States)

    Kawasaki, Takayasu; Yaji, Toyonari; Ohta, Toshiaki; Tsukiyama, Koichi

    2016-01-01

    A mid-infrared free-electron laser (FEL) is a linearly polarized, high-peak powered pulse laser with tunable wavelength within the mid-infrared absorption region. It was recently found that pathogenic amyloid fibrils could be partially dissociated to the monomer form by the irradiation of the FEL targeting the amide I band (C=O stretching vibration), amide II band (N-H bending vibration) and amide III band (C-N stretching vibration). In this study, the irradiation effect of the FEL on keratin aggregate was tested as another model to demonstrate an applicability of the FEL for dissociation of protein aggregates. Synchrotron radiation infrared microscopy analysis showed that the α-helix content in the aggregate structure decreased to almost the same level as that in the monomer state after FEL irradiation tuned to 6.06 µm (amide I band). Both irradiations at 6.51 µm (amide II band) and 8.06 µm (amide III band) also decreased the content of the aggregate but to a lesser extent than for the irradiation at the amide I band. On the contrary, the irradiation tuned to 5.6 µm (non-absorbance region) changed little the secondary structure of the aggregate. Scanning-electron microscopy observation at the submicrometer order showed that the angular solid of the aggregate was converted to non-ordered fragments by the irradiation at each amide band, while the aggregate was hardly deformed by the irradiation at 5.6 µm. These results demonstrate that the amide-specific irradiation by the FEL was effective for dissociation of the protein aggregate to the monomer form.

  6. The assignment of dissociative electron attachment bands in compounds containing hydroxyl and amino groups

    International Nuclear Information System (INIS)

    Skalicky, Tomas; Allan, Michael

    2004-01-01

    Dissociative electron attachment (DEA) spectra were recorded for methanol, phenol, diethylamine, tetramethylhydrazine, piperazine, pyrrole and N,N-dimethylaniline. Comparison with He I photoelectron spectra permitted the assignment of virtually all DEA bands in the saturated compounds to core excited Feshbach resonances with double occupation of Rydberg-like orbitals and various Koopmans' states of the positive ion as a core. These resonances shift to lower energies with alkyl substitution, in contrast to the shape resonances, and are found at surprisingly low energies in the amines. The DEA spectra in the unsaturated compounds show no or only weak evidence for the Rydberg-type Feshbach resonances. It is proposed that DEA in saturated polyatomic molecules containing hydroxyl and amino groups is in general dominated by this type of resonance

  7. Electron momentum spectroscopy of the core state of solid carbon

    International Nuclear Information System (INIS)

    Caprari, R.S.; Clark, S.A.C.; McCarthy, I.E.; Storer, P.J.; Vos, M.; Weigold, E.

    1994-08-01

    Electron momentum spectroscopy (binary encounter (e,2e)) experimental results are presented for the core state of an amorphous carbon allotrope. The (e,2e) cross section has two identifiable regions. One is a narrow energy width 'core band peak' that does not disperse with momentum. At higher binding energies there is an energy diffuse 'multiple scattering continuum', which is a consequence of (e,2e) collisions with core electrons that are accompanied by inelastic scattering of one or more of the incoming or outgoing electrons. Comparisons of experimental momentum distributions with the Hartree-Fock atomic carbon ls orbital are presented for both regions. 16 refs., 4 figs

  8. Molecular Electronic Angular Motion Transducer Broad Band Self-Noise

    Science.gov (United States)

    Zaitsev, Dmitry; Agafonov, Vadim; Egorov, Egor; Antonov, Alexander; Shabalina, Anna

    2015-01-01

    Modern molecular electronic transfer (MET) angular motion sensors combine high technical characteristics with low cost. Self-noise is one of the key characteristics which determine applications for MET sensors. However, until the present there has not been a model describing the sensor noise in the complete operating frequency range. The present work reports the results of an experimental study of the self-noise level of such sensors in the frequency range of 0.01–200 Hz. Based on the experimental data, a theoretical model is developed. According to the model, self-noise is conditioned by thermal hydrodynamic fluctuations of the operating fluid flow in the frequency range of 0.01–2 Hz. At the frequency range of 2–100 Hz, the noise power spectral density has a specific inversely proportional dependence of the power spectral density on the frequency that could be attributed to convective processes. In the high frequency range of 100–200 Hz, the noise is conditioned by the voltage noise of the electronics module input stage operational amplifiers and is heavily reliant to the sensor electrical impedance. The presented results allow a deeper understanding of the molecular electronic sensor noise nature to suggest the ways to reduce it. PMID:26610502

  9. Indium oxide—a transparent, wide-band gap semiconductor for (opto)electronic applications

    International Nuclear Information System (INIS)

    Bierwagen, Oliver

    2015-01-01

    The present review takes a semiconductor physics perspective to summarize the state-of-the art of In 2 O 3 in relation to applications. After discussing conventional and novel applications, the crystal structure, synthesis of single-crystalline material, band-structure and optical transparency are briefly introduced before focussing on the charge carrier transport properties. The issues of unintentional n-type conductivity and its likely causes, the surface electron accumulation, and the lack of p-type conductivity will be presented. Intentional doping will be demonstrated to control the electron concentration and resistivity over a wide range, but is also subject to compensation. The control of the surface accumulation in relation to Schottky and ohmic contacts will be demonstrated. In the context of scattering mechanisms, the electron mobility and its limits will be discussed. Finally, the Seebeck coefficient and its significance will be shown, and ferromagnetic doping of In 2 O 3 will be critically discussed. With this overview most if not all ingredients for the use of In 2 O 3 as semiconductor material in novel or improved conventional devices will be given. (invited review)

  10. A multi-band, multi-level, multi-electron model for efficient FDTD simulations of electromagnetic interactions with semiconductor quantum wells

    Science.gov (United States)

    Ravi, Koustuban; Wang, Qian; Ho, Seng-Tiong

    2015-08-01

    We report a new computational model for simulations of electromagnetic interactions with semiconductor quantum well(s) (SQW) in complex electromagnetic geometries using the finite-difference time-domain method. The presented model is based on an approach of spanning a large number of electron transverse momentum states in each SQW sub-band (multi-band) with a small number of discrete multi-electron states (multi-level, multi-electron). This enables accurate and efficient two-dimensional (2-D) and three-dimensional (3-D) simulations of nanophotonic devices with SQW active media. The model includes the following features: (1) Optically induced interband transitions between various SQW conduction and heavy-hole or light-hole sub-bands are considered. (2) Novel intra sub-band and inter sub-band transition terms are derived to thermalize the electron and hole occupational distributions to the correct Fermi-Dirac distributions. (3) The terms in (2) result in an explicit update scheme which circumvents numerically cumbersome iterative procedures. This significantly augments computational efficiency. (4) Explicit update terms to account for carrier leakage to unconfined states are derived, which thermalize the bulk and SQW populations to a common quasi-equilibrium Fermi-Dirac distribution. (5) Auger recombination and intervalence band absorption are included. The model is validated by comparisons to analytic band-filling calculations, simulations of SQW optical gain spectra, and photonic crystal lasers.

  11. An L-Band Polarized Electron PWT Photoinjector for the International Linear Collider (ILC)

    CERN Document Server

    Yu, David; Chen Ping; Lundquist, Martin; Luo, Yan; Smirnov, Alexei Yu

    2005-01-01

    A multi-cell, standing-wave, L-band, p-mode, plane-wave-transformer (PWT) photoinjector with an integrated photocathode in a novel linac structure is proposed by DULY Research Inc. as a polarized electron source. The PWT photoinjector is capable of operation in ultra high vacuum and moderate field gradient. Expected performance of an L-band polarized electron PWT injector operating under the parameters for the International Linear Collider is presented. The projected normalized transverse rms emittance is an order of magnitude lower than that produced with a polarized electron dc gun followed by subharmonic bunchers.

  12. Extreme ultraviolet narrow band emission from electron cyclotron resonance plasmas

    International Nuclear Information System (INIS)

    Zhao, H. Y.; Zhao, H. W.; Sun, L. T.; Zhang, X. Z.; Wang, H.; Ma, B. H.; Li, X. X.; Zhu, Y. H.; Sheng, L. S.; Zhang, G. B.; Tian, Y. C.

    2008-01-01

    Extreme ultraviolet lithography (EUVL) is considered as the most promising solution at and below dynamic random access memory 32 nm half pitch among the next generation lithography, and EUV light sources with high output power and sufficient lifetime are crucial for the realization of EUVL. However, there is no EUV light source completely meeting the requirements for the commercial application in lithography yet. Therefore, ECR plasma is proposed as a novel concept EUV light source. In order to investigate the feasibility of ECR plasma as a EUV light source, the narrow band EUV power around 13.5 nm emitted by two highly charged ECR ion sources--LECR2M and SECRAL--was measured with a calibrated EUV power measurement tool. Since the emission lines around 13.5 nm can be attributed to the 4d-5p transitions of Xe XI or the 4d-4f unresolved transition array of Sn VIII-XIII, xenon plasma was investigated. The dependence of the EUV throughput and the corresponding conversion efficiency on the parameters of the ion source, such as the rf power and the magnetic confinement configurations, were preliminarily studied

  13. Photoelectric emission from negative-electron-affinity diamond (111) surfaces: Exciton breakup versus conduction-band emission

    International Nuclear Information System (INIS)

    Bandis, C.; Pate, B.B.

    1995-01-01

    We have recently reported that bound electron-hole pairs (Mott-Wannier excitons) are the dominant source of photoelectron emission from specially prepared [''as-polished'' C(111)-(1x1):H] negative-electron-affinity diamond surfaces for near-band-gap excitation up to 0.5 eV above threshold [C. Bandis and B. B. Pate, Phys. Rev. Lett. 74, 777 (1995)]. It was found that photoexcited excitons transport to the surface, break up, and emit their electron. In this paper, we extend the study of exciton-derived emission to include partial yield (constant final-state) analysis as well as angular distribution measurements of the photoelectric emission. In addition, we find that exciton-derived emission does not always dominate. Photoelectric emission properties of the in situ ''rehydrogenated'' (111)-(1x1):H diamond surface are characteristically different than emission observed from the as-polished (111)-(1x1):H surface. The rehydrogenated surface has additional downward band bending as compared to the as-polished surface. In confirmation of the assignment of photoelectric yield to exciton breakup emission, we find a significant enhancement of the total electron yield when the downward band bending of the hydrogenated surface is increased. The functional form of the observed total electron yield demonstrates that, in contrast to the as-polished surface, conduction-band electrons are a significant component of the observed photoelectric yield from the in situ hydrogenated (111)-(1x1):H surface. Furthermore, electron emission characteristics of the rehydrogenated surface confirms our assignment of a Fan phonon-cascade mechanism for thermalization of excitons

  14. Observation of an electron band above the Fermi level in FeTe0.55Se0.45 from in-situ surface doping

    International Nuclear Information System (INIS)

    Zhang, P.; Ma, J.; Qian, T.; Richard, P.; Ding, H.; Xu, N.; Xu, Y.-M.; Fedorov, A. V.; Denlinger, J. D.; Gu, G. D.

    2014-01-01

    We used in-situ potassium (K) evaporation to dope the surface of the iron-based superconductor FeTe 0.55 Se 0.45 . The systematic study of the bands near the Fermi level confirms that electrons are doped into the system, allowing us to tune the Fermi level of this material and to access otherwise unoccupied electronic states. In particular, we observe an electron band located above the Fermi level before doping that shares similarities with a small three-dimensional pocket observed in the cousin, heavily electron-doped KFe 2−x Se 2 compound.

  15. K-band single-chip electron spin resonance detector.

    Science.gov (United States)

    Anders, Jens; Angerhofer, Alexander; Boero, Giovanni

    2012-04-01

    We report on the design, fabrication, and characterization of an integrated detector for electron spin resonance spectroscopy operating at 27 GHz. The microsystem, consisting of an LC-oscillator and a frequency division module, is integrated onto a single silicon chip using a conventional complementary metal-oxide-semiconductor technology. The achieved room temperature spin sensitivity is about 10(8)spins/G Hz(1/2), with a sensitive volume of about (100 μm)(3). Operation at 77K is also demonstrated. Copyright © 2012 Elsevier Inc. All rights reserved.

  16. Electronic structure and optical properties of Cs2HgI4: Experimental study and band-structure DFT calculations

    Science.gov (United States)

    Lavrentyev, A. A.; Gabrelian, B. V.; Vu, V. T.; Shkumat, P. N.; Myronchuk, G. L.; Khvyshchun, M.; Fedorchuk, A. O.; Parasyuk, O. V.; Khyzhun, O. Y.

    2015-04-01

    High-quality single crystal of cesium mercury tetraiodide, Cs2HgI4, has been synthesized by the vertical Bridgman-Stockbarger method and its crystal structure has been refined. In addition, electronic structure and optical properties of Cs2HgI4 have been studied. For the crystal under study, X-ray photoelectron core-level and valence-band spectra for pristine and Ar+-ion irradiated surfaces have been measured. The present X-ray photoelectron spectroscopy (XPS) results indicate that the Cs2HgI4 single crystal surface is very sensitive with respect to Ar+ ion-irradiation. In particular, Ar+ bombardment of the single crystal surface alters the elemental stoichiometry of the Cs2HgI4 surface. To elucidate peculiarities of the energy distribution of the electronic states within the valence-band and conduction-band regions of the Cs2HgI4 compound, we have performed first-principles band-structure calculations based on density functional theory (DFT) as incorporated in the WIEN2k package. Total and partial densities of states for Cs2HgI4 have been calculated. The DFT calculations reveal that the I p states make the major contributions in the upper portion of the valence band, while the Hg d, Cs p and I s states are the dominant contributors in its lower portion. Temperature dependence of the light absorption coefficient and specific electrical conductivity has been explored for Cs2HgI4 in the temperature range of 77-300 K. Main optical characteristics of the Cs2HgI4 compound have been elucidated by the first-principles calculations.

  17. Electron band theory predictions and the construction of phase diagrams

    International Nuclear Information System (INIS)

    Watson, R.E.; Bennett, L.H.; Davenport, J.W.; Weinert, M.

    1985-01-01

    The a priori theory of metals is yielding energy results which are relevant to the construction of phase diagrams - to the solution phases as well as to line compounds. There is a wide range in the rigor of the calculations currently being done and this is discussed. Calculations for the structural stabilities (fcc vs bcc vs hcp) of the elemental metals, quantities which are employed in the constructs of the terminal phases, are reviewed and shown to be inconsistent with the values currently employed in such constructs (also see Miodownik elsewhere in this volume). Finally, as an example, the calculated heats of formation are compared with experiment for PtHf, IrTa and OsW, three compounds with the same electron to atom ratio but different bonding properties

  18. States of the electron in hydrocarbon liquids

    International Nuclear Information System (INIS)

    Mozumder, A.

    2005-01-01

    Some features of the stationary and dynamic states of the electron are critically examined. Outline of a quantum mechanical description of electron thermalization is attempted qualitatively. The effects of both the mean free path and the reaction inefficiency on electron-ion geminate escape probability are investigated by a recently developed Metropolis method. The trapped state is interpreted in terms of Anderson localization, yielding an approximate number of molecules interacting with the trapped electron

  19. Integral elastic, electronic-state, ionization, and total cross sections for electron scattering with furfural

    Science.gov (United States)

    Jones, D. B.; da Costa, R. F.; Varella, M. T. do N.; Bettega, M. H. F.; Lima, M. A. P.; Blanco, F.; García, G.; Brunger, M. J.

    2016-04-01

    We report absolute experimental integral cross sections (ICSs) for electron impact excitation of bands of electronic-states in furfural, for incident electron energies in the range 20-250 eV. Wherever possible, those results are compared to corresponding excitation cross sections in the structurally similar species furan, as previously reported by da Costa et al. [Phys. Rev. A 85, 062706 (2012)] and Regeta and Allan [Phys. Rev. A 91, 012707 (2015)]. Generally, very good agreement is found. In addition, ICSs calculated with our independent atom model (IAM) with screening corrected additivity rule (SCAR) formalism, extended to account for interference (I) terms that arise due to the multi-centre nature of the scattering problem, are also reported. The sum of those ICSs gives the IAM-SCAR+I total cross section for electron-furfural scattering. Where possible, those calculated IAM-SCAR+I ICS results are compared against corresponding results from the present measurements with an acceptable level of accord being obtained. Similarly, but only for the band I and band II excited electronic states, we also present results from our Schwinger multichannel method with pseudopotentials calculations. Those results are found to be in good qualitative accord with the present experimental ICSs. Finally, with a view to assembling a complete cross section data base for furfural, some binary-encounter-Bethe-level total ionization cross sections for this collision system are presented.

  20. A Combined Theoretical and Experimental View on Valence and Conduction Band Densities of States of Lead Halide Perovskites

    Science.gov (United States)

    Kronik, Leeor; Endres, James; Egger, David A.; Kulbak, Michael; Kerner, Ross A.; Zhao, Lianfeng; Silver, Scott H.; Hodes, Gary; Rand, Barry P.; Cahen, David; Kahn, Antoine

    We present results for the valence and conduction band density of states (DOS), measured via ultraviolet and inverse photoemission spectroscopies for three lead halide perovskites. Specifically, the DOS of MAPbI3, MAPbBr3, and CsPbBr3, grown on different substrates, are compared. Theoretical DOS, calculated via hybrid density functional theory and including spin-orbit coupling, are compared to experimental data. The agreement between experiment and theory, obtained after correcting the latter for quantitative discrepancies, leads to the identification of valence and conduction band spectral features. In particular, this comparison allows for precise determination of the energy position of the band edges, namely ionization energies and electron affinities of these materials. We find an unusually low DOS at the valence band maximum (VBM) of these systems, which confirms and generalizes previous findings of strong band dispersion and low DOS at the VBM of MAPbI3. This calls for special attention when using electron spectroscopy to determine the frontier electronic states of lead halide perovskites.

  1. Direct imaging of band profile in single layer MoS2 on graphite: quasiparticle energy gap, metallic edge states, and edge band bending.

    Science.gov (United States)

    Zhang, Chendong; Johnson, Amber; Hsu, Chang-Lung; Li, Lain-Jong; Shih, Chih-Kang

    2014-05-14

    Using scanning tunneling microscopy and spectroscopy, we probe the electronic structures of single layer MoS2 on graphite. The apparent quasiparticle energy gap of single layer MoS2 is measured to be 2.15 ± 0.06 eV at 77 K, albeit a higher second conduction band threshold at 0.2 eV above the apparent conduction band minimum is also observed. Combining it with photoluminescence studies, we deduce an exciton binding energy of 0.22 ± 0.1 eV (or 0.42 eV if the second threshold is use), a value that is lower than current theoretical predictions. Consistent with theoretical predictions, we directly observe metallic edge states of single layer MoS2. In the bulk region of MoS2, the Fermi level is located at 1.8 eV above the valence band maximum, possibly due to the formation of a graphite/MoS2 heterojunction. At the edge, however, we observe an upward band bending of 0.6 eV within a short depletion length of about 5 nm, analogous to the phenomena of Fermi level pinning of a 3D semiconductor by metallic surface states.

  2. BAND ALIGNMENT OF ULTRATHIN GIZO/SiO2/Si HETEROSTRUCTURE DETERMINED BY ELECTRON SPECTROSCOPY

    Directory of Open Access Journals (Sweden)

    Hee Jae Kang2

    2011-11-01

    Full Text Available Amorphous GaInZnO (GIZO thin films are grown on SiO2/Si substrate by the RF magnetron sputtering method. By thecombination of measured band gaps from reflection energy loss spectroscopy (REELS spectra and valence band fromX-ray photo-electron spectroscopy (XPS spectra, we have demonstrated the energy band alignment of GIZO thin films.The band gap values are 3.2 eV, 3.2 eV, 3.4eV and 3.6eV for the concentration ratios of Ga: In: Zn in GIZO thin filmsare 1:1:1, 2:2:1, 3:2:1 and 4:2:1, respectively. These are attributed to the larger band gap energy of Ga2O3 comparedwith In2O3 and ZnO. The valence band offsets (ΔEv decrease from 2.18 to 1.68 eV with increasing amount of Ga inGIZO thin films for GIZO1 to GIZO4, respectively. These experimental values of band gap and valence band offsetwill provide the further understanding in the fundamental properties of GIZO/SiO2/Si heterostructure, which will beuseful in the design, modeling and analysis of the performance devices applications.

  3. Crystal structure, electrical properties and electronic band structure of tantalum ditelluride

    CERN Document Server

    Vernes, A; Bensch, W; Heid, W; Naether, C

    1998-01-01

    Motivated by the unexpectedly strong influence of the Te atoms on the structural and bonding properties of the transition metal tellurides, we have performed a detailed study of TaTe sub 2. Experimentally, this comprises a crystal structure determination as well as electrical resistivity measurements. The former analysis leads to an accurate update of the structural data reported in the 1960s, while the latter provides evidence for the mainly electronic character of scattering processes leading to the electrical conductivity. In addition, the electronic properties of TaTe sub 2 have been calculated using the TB-LMTO method. The partial density of states reflects the close connection of the Ta zigzag chains and the Te-Te network. This finding explains the charge transfer in the system in a rather simple way. The orthogonal-orbital character of the bands proved the existence of pi-bonds. The Fermi-surface study supports the interpretation of the experimental resistivity measurements. (author)

  4. Advanced electron microscopy of wide band-gap semiconductor materials

    International Nuclear Information System (INIS)

    Fay, M.W.

    2000-10-01

    The microstructure of GaN layers grown by metal organic vapour phase epitaxy on (0001) sapphire substrates using a novel precursor for deposition of AlN buffer layers has been investigated and compared to layers grown using low temperature GaN buffer layers and state-of-the-art material. It has been shown that the quality of layers grown using the novel precursor is comparable to the state-of-the-art material. TEM analysis has been performed of multiple quantum wells of InGaN grown within GaN epitaxial layers by metal organic vapour phase epitaxy. Elementally sensitive TEM techniques have been used to determine the spatial distribution of In and Ga within these structures. Fluctuations in In sensitive images are observed on the nm-scale. Clear evidence of segregation of In during layer growth has been seen. Models of the In segregation are in good agreement with experimental results. Elementally sensitive techniques have been used to investigate the elemental distributions in TiAl and NiAu contacts to GaN. Annealing of TiAl contacts has been seen to result in the formation of a thin interfacial Ti rich phase, and of N depletion at the surface of the GaN layer to the depth of tens of nm. Annealing NiAu contacts at 700 deg. C was seen to result in the formation of Ga-rich interfacial phases, of both crystalline and amorphous structure. ZnS and ZnCdS layers grown on (001) GaP supplied by the University of Hull have been investigated. ZnS layers were found to contain a high density of inclined stacking faults throughout the layer, originating from the interface with the substrate. Energy sensitive techniques have been used to investigate ZnCdS quantum well structures. The use of a ZnCdS superlattice structure around a ZnCdS quantum well to approximate a reduced barrier was seen to result in less thickness variations than when no barrier was used. (author)

  5. Conduction band-edge d-states in high-k dielectrics due to Jahn-Teller term splittings

    International Nuclear Information System (INIS)

    Lucovsky, G.; Fulton, C.C.; Zhang, Y.; Luning, J.; Edge, L.; Whitten, J.L.; Nemanich, R.J.; Schlom, D.G.; Afanase'v, V.V.

    2005-01-01

    X-ray absorption spectroscopy (XAS) is used to study conduction band edge electronic structure of high-k transition metal (TM) and trivalent lanthanide series rare earth (RE) oxide dielectrics. Empty TM/RE d-states are studied by intra-atomic transitions originating in core level spin-orbit split p-states, and conduction band states are studied in inter-atomic transitions which originate in the oxygen atom 1s core level state. In non-crystalline Zr and Hf silicate alloys, the local bonding symmetry, or crystal field splits these d-states into doubly and triply degenerate features. In nano-crystalline oxides, there are additional d-state splittings due to contributions of more distant neighbors that completely remove d-state degeneracies via the Jahn-Teller effect mechanism. This gives rise to highly localized band edge states that are electronically active in photoconductivity, internal photoemission, and act as bulk traps in metal oxide semiconductor (MOS) devices

  6. Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

    Directory of Open Access Journals (Sweden)

    Valeri V. Afanas'ev

    2014-01-01

    Full Text Available Evolution of the electron energy band alignment at interfaces between different semiconductors and wide-gap oxide insulators is examined using the internal photoemission spectroscopy, which is based on observations of optically-induced electron (or hole transitions across the semiconductor/insulator barrier. Interfaces of various semiconductors ranging from the conventional silicon to the high-mobility Ge-based (Ge, Si1-xGex, Ge1-xSnx and AIIIBV group (GaAs, InxGa1-xAs, InAs, GaP, InP, GaSb, InSb materials were studied revealing several general trends in the evolution of band offsets. It is found that in the oxides of metals with cation radii larger than ≈0.7 Å, the oxide valence band top remains nearly at the same energy (±0.2 eV irrespective of the cation sort. Using this result, it becomes possible to predict the interface band alignment between oxides and semiconductors as well as between dissimilar insulating oxides on the basis of the oxide bandgap width which are also affected by crystallization. By contrast, oxides of light elements, for example, Be, Mg, Al, Si, and Sc exhibit significant shifts of the valence band top. General trends in band lineup variations caused by a change in the composition of semiconductor photoemission material are also revealed.

  7. Electron and hole photoemission detection for band offset determination of tunnel field-effect transistor heterojunctions

    International Nuclear Information System (INIS)

    Li, Wei; Zhang, Qin; Kirillov, Oleg A.; Levin, Igor; Richter, Curt A.; Gundlach, David J.; Nguyen, N. V.; Bijesh, R.; Datta, S.; Liang, Yiran; Peng, Lian-Mao; Liang, Xuelei

    2014-01-01

    We report experimental methods to ascertain a complete energy band alignment of a broken-gap tunnel field-effect transistor based on an InAs/GaSb hetero-junction. By using graphene as an optically transparent electrode, both the electron and hole barrier heights at the InAs/GaSb interface can be quantified. For a Al 2 O 3 /InAs/GaSb layer structure, the barrier height from the top of the InAs and GaSb valence bands to the bottom of the Al 2 O 3 conduction band is inferred from electron emission whereas hole emissions reveal the barrier height from the top of the Al 2 O 3 valence band to the bottom of the InAs and GaSb conduction bands. Subsequently, the offset parameter at the broken gap InAs/GaSb interface is extracted and thus can be used to facilitate the development of predicted models of electron quantum tunneling efficiency and transistor performance

  8. Structural analysis, electronic properties, and band gaps of a graphene nanoribbon: A new 2D materials

    Science.gov (United States)

    Dass, Devi

    2018-03-01

    Graphene nanoribbon (GNR), a new 2D carbon nanomaterial, has some unique features and special properties that offer a great potential for interconnect, nanoelectronic devices, optoelectronics, and nanophotonics. This paper reports the structural analysis, electronic properties, and band gaps of a GNR considering different chirality combinations obtained using the pz orbital tight binding model. In structural analysis, the analytical expressions for GNRs have been developed and verified using the simulation for the first time. It has been found that the total number of unit cells and carbon atoms within an overall unit cell and molecular structure of a GNR have been changed with the change in their chirality values which are similar to the values calculated using the developed analytical expressions thus validating both the simulation as well as analytical results. Further, the electronic band structures at different chirality values have been shown for the identification of metallic and semiconductor properties of a GNR. It has been concluded that all zigzag edge GNRs are metallic with very small band gaps range whereas all armchair GNRs show both the metallic and semiconductor nature with very small and high band gaps range. Again, the total number of subbands in each electronic band structure is equal to the total number of carbon atoms present in overall unit cell of the corresponding GNR. The semiconductors GNRs can be used as a channel material in field effect transistor suitable for advanced CMOS technology whereas the metallic GNRs could be used for interconnect.

  9. Non-Dirac Chern insulators with large band gaps and spin-polarized edge states.

    Science.gov (United States)

    Xue, Y; Zhang, J Y; Zhao, B; Wei, X Y; Yang, Z Q

    2018-05-10

    Based on first-principles calculations and k·p models, we demonstrate that PbC/MnSe heterostructures are a non-Dirac type of Chern insulator with very large band gaps (244 meV) and exotically half-metallic edge states, providing the possibilities of realizing very robust, completely spin polarized, and dissipationless spintronic devices from the heterostructures. The achieved extraordinarily large nontrivial band gap can be ascribed to the contribution of the non-Dirac type electrons (composed of px and py) and the very strong atomic spin-orbit coupling (SOC) interaction of the heavy Pb element in the system. Surprisingly, the band structures are found to be sensitive to the different exchange and correlation functionals adopted in the first-principles calculations. Chern insulators with various mechanisms are acquired from them. These discoveries show that the predicted nontrivial topology in PbC/MnSe heterostructures is robust and can be observed in experiments at high temperatures. The system has great potential to have attractive applications in future spintronics.

  10. Integral elastic, electronic-state, ionization, and total cross sections for electron scattering with furfural

    Energy Technology Data Exchange (ETDEWEB)

    Jones, D. B. [School of Chemical and Physical Sciences, Flinders University, GPO Box 2100, Adelaide, South Australia 5001 (Australia); Costa, R. F. da [Instituto de Física “Gleb Wataghin,” Universidade Estadual de Campinas, Campinas, 13083-859 São Paulo (Brazil); Departamento de Física, Universidade Federal do Espírito Santo, 29075-910, Vitória, Espírito Santo (Brazil); Varella, M. T. do N. [Instituto de Física, Universidade de São Paulo, CP 66318, 05315-970 São Paulo (Brazil); Bettega, M. H. F. [Departamento de Física, Universidade Federal do Paraná, CP 19044, 81531-990 Curitiba, Paraná (Brazil); Lima, M. A. P. [Instituto de Física “Gleb Wataghin,” Universidade Estadual de Campinas, Campinas, 13083-859 São Paulo (Brazil); Blanco, F. [Departamento de Física Atómica, Molecular y Nuclear, Universidad Complutense de Madrid, Madrid E-28040 (Spain); García, G. [Instituto de Física Fundamental, CSIC, Serrano 113-bis, 28006 Madrid (Spain); Brunger, M. J., E-mail: Michael.Brunger@flinders.edu.au [School of Chemical and Physical Sciences, Flinders University, GPO Box 2100, Adelaide, South Australia 5001 (Australia); Institute of Mathematical Sciences, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2016-04-14

    We report absolute experimental integral cross sections (ICSs) for electron impact excitation of bands of electronic-states in furfural, for incident electron energies in the range 20–250 eV. Wherever possible, those results are compared to corresponding excitation cross sections in the structurally similar species furan, as previously reported by da Costa et al. [Phys. Rev. A 85, 062706 (2012)] and Regeta and Allan [Phys. Rev. A 91, 012707 (2015)]. Generally, very good agreement is found. In addition, ICSs calculated with our independent atom model (IAM) with screening corrected additivity rule (SCAR) formalism, extended to account for interference (I) terms that arise due to the multi-centre nature of the scattering problem, are also reported. The sum of those ICSs gives the IAM-SCAR+I total cross section for electron–furfural scattering. Where possible, those calculated IAM-SCAR+I ICS results are compared against corresponding results from the present measurements with an acceptable level of accord being obtained. Similarly, but only for the band I and band II excited electronic states, we also present results from our Schwinger multichannel method with pseudopotentials calculations. Those results are found to be in good qualitative accord with the present experimental ICSs. Finally, with a view to assembling a complete cross section data base for furfural, some binary-encounter-Bethe-level total ionization cross sections for this collision system are presented.

  11. Integral elastic, electronic-state, ionization, and total cross sections for electron scattering with furfural

    International Nuclear Information System (INIS)

    Jones, D. B.; Costa, R. F. da; Varella, M. T. do N.; Bettega, M. H. F.; Lima, M. A. P.; Blanco, F.; García, G.; Brunger, M. J.

    2016-01-01

    We report absolute experimental integral cross sections (ICSs) for electron impact excitation of bands of electronic-states in furfural, for incident electron energies in the range 20–250 eV. Wherever possible, those results are compared to corresponding excitation cross sections in the structurally similar species furan, as previously reported by da Costa et al. [Phys. Rev. A 85, 062706 (2012)] and Regeta and Allan [Phys. Rev. A 91, 012707 (2015)]. Generally, very good agreement is found. In addition, ICSs calculated with our independent atom model (IAM) with screening corrected additivity rule (SCAR) formalism, extended to account for interference (I) terms that arise due to the multi-centre nature of the scattering problem, are also reported. The sum of those ICSs gives the IAM-SCAR+I total cross section for electron–furfural scattering. Where possible, those calculated IAM-SCAR+I ICS results are compared against corresponding results from the present measurements with an acceptable level of accord being obtained. Similarly, but only for the band I and band II excited electronic states, we also present results from our Schwinger multichannel method with pseudopotentials calculations. Those results are found to be in good qualitative accord with the present experimental ICSs. Finally, with a view to assembling a complete cross section data base for furfural, some binary-encounter-Bethe-level total ionization cross sections for this collision system are presented.

  12. Density changes in shear bands of a metallic glass determined by correlative analytical transmission electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Rösner, Harald, E-mail: rosner@uni-muenster.de [Institut für Materialphysik, Westfälische Wilhelms-Universität Münster, Wilhelm-Klemm-Strasse 10, D-48149 Münster (Germany); Peterlechner, Martin [Institut für Materialphysik, Westfälische Wilhelms-Universität Münster, Wilhelm-Klemm-Strasse 10, D-48149 Münster (Germany); Kübel, Christian [Karlsruhe Institute of Technology (KIT), Institute of Nanotechnology (INT), Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen (Germany); Karlsruhe Nano Micro Facility (KNMF), Karlsruhe Institute of Technology (KIT), D-76344 Eggenstein-Leopoldshafen (Germany); Schmidt, Vitalij [Institut für Materialphysik, Westfälische Wilhelms-Universität Münster, Wilhelm-Klemm-Strasse 10, D-48149 Münster (Germany); Wilde, Gerhard [Institut für Materialphysik, Westfälische Wilhelms-Universität Münster, Wilhelm-Klemm-Strasse 10, D-48149 Münster (Germany); Institute of Nanochemistry and Nanobiology, School of Environmental and Chemical Engineering, Shanghai University, Shanghai 200444 (China)

    2014-07-01

    Density changes between sheared zones and their surrounding amorphous matrix as a result of plastic deformation in a cold-rolled metallic glass (melt-spun Al{sub 88}Y{sub 7}Fe{sub 5}) were determined using high-angle annular dark-field (HAADF) detector intensities supplemented by electron-energy loss spectroscopy (EELS), energy-dispersive X-ray (EDX) and nano-beam diffraction analyses. Sheared zones or shear bands were observed as regions of bright or dark contrast arising from a higher or lower density relative to the matrix. Moreover, abrupt contrast changes from bright to dark and vice versa were found within individual shear bands. We associate the decrease in density mainly with an enhanced free volume in the shear bands and the increase in density with concomitant changes of the mass. This interpretation is further supported by changes in the zero loss and Plasmon signal originating from such sites. The limits of this new approach are discussed. - Highlights: • We describe a novel approach for measuring densities in shear bands of metallic glasses. • The linear relation of the dark-field intensity I/I{sub 0} and the mass thickness ρt was used. • Individual shear bands showed abrupt contrast changes from bright to dark and vice versa. • Density changes ranging from about −10% to +6% were found for such shear bands. • Mixtures of amorphous/medium range ordered domains were found within the shear bands.

  13. Electronic band structure of TiFese2 in ferromagnetic phase

    International Nuclear Information System (INIS)

    Jahangirli, Z.A.; Mimura, K.; Shim, Y.; Mamedov, N.T.; Wakita, K.; Orudzhev, G.S.; Jahangirli, Z.A.

    2011-01-01

    Electronic band structure of crystalline TiFeSe 2 has been calculated using full-potential method of Linear Augmented Plane Wave (LAPW) in density-functional approach with exchange-correlation potential taken in Generalized Gradient Approximation (GGA). The chemical bond in TiFeSe 2 is shown to be metallic because energies of 3d-electrons localized at iron atoms are close to Fermi energy level

  14. Electrostatic noise bands associated with the electron gyrofrequency and plasma frequency in the outer magnetosphere

    International Nuclear Information System (INIS)

    Shaw, R.R.

    1975-01-01

    Naturally occurring noise bands near the electron plasma frequency are frequently detected by the University of Iowa plasma wave experiment on the IMP 6 satellite in the region from just inside the plasmapause to radial distances of about 10 earth radii in the outer magnetosphere. The electric field strength of these noise bands is usually small with electric field spectral densities near 10 -15 volts 2 meter -2 Hz -1 . A wave magnetic field has been detected only in a few unusually intense cases, and in these cases the magnetic field energy density is several orders of magnitude smaller than the electric field energy density. The bands are observed at all magnetic latitudes covered by the IMP 6 orbit (parallelγ/sub m/parallel less than or equal to 45 0 ) and appear to be a permanent feature of the outer magnetosphere. They are found at all local times and occur least frequently in the quadrant from 18 to 24 hours. The bands appear to consist of two distinct spectral types, diffuse and narrow. In both types the center frequency of the noise band is bounded by consecutive harmonics of the electron gyrofrequency, and the bands occur most often between harmonics that are near the local electron plasma frequency. These bands appear to merge continuously into two types of plasma wave emissions that are found in dissimilar regions of the magnetosphere (upper hybrid resonance noise, also called Region 3 noise, inside the plasmasphere and (n + 1/2)f/sub g/ harmonics in the outer magnetosphere). It is suggested that this smooth merging is caused by changes in the plasma wave dispersion relation that occur as the spacecraft moves from the cold plasma within the plasmasphere into the warm non-Maxwellian plasma found in the outer magnetosphere

  15. Electronic Band Structure of BaCo_{2}As_{2}: A Fully Doped Ferropnictide Analog with Reduced Electronic Correlations

    Directory of Open Access Journals (Sweden)

    N. Xu

    2013-01-01

    Full Text Available We report an investigation with angle-resolved photoemission spectroscopy of the Fermi surface and electronic band structure of BaCo_{2}As_{2}. Although its quasinesting-free Fermi surface differs drastically from that of its Fe-pnictide cousins, we show that the BaCo_{2}As_{2} system can be used as an approximation to the bare unoccupied band structure of the related BaFe_{2-x}Co_{x}As_{2} and Ba_{1-x}K_{x}Fe_{2}As_{2} compounds. However, our experimental results, in agreement with dynamical-mean-field-theory calculations, indicate that electronic correlations are much less important in BaCo_{2}As_{2} than in the ferropnictides. Our findings suggest that this effect is due to the increased filling of the electronic 3d shell in the presence of significant Hund’s exchange coupling.

  16. The Electronic Band Structure of Platinum Oxide (PtO) | Omehe ...

    African Journals Online (AJOL)

    We have performed the electronic band structure of the bulk and monolayer of PtO using the full potential linear muffin-tin orbital and the projector augmented wave method with the density functional theory. We applied the LDA and LDA+U scheme to both methods. It was found out that the LDA calculation of bulk PtO ...

  17. Direct Measurement of the Band Structure of a Buried Two-Dimensional Electron Gas

    DEFF Research Database (Denmark)

    Miwa, Jill; Hofmann, Philip; Simmons, Michelle Y.

    2013-01-01

    We directly measure the band structure of a buried two dimensional electron gas (2DEG) using angle resolved photoemission spectroscopy. The buried 2DEG forms 2 nm beneath the surface of p-type silicon, because of a dense delta-type layer of phosphorus n-type dopants which have been placed there...

  18. Theory of two-photon absorption by exciton states in cubic semiconductors with degenerate valence bands

    International Nuclear Information System (INIS)

    Nguyen Ai Viet; Nguyen Toan Thang.

    1987-06-01

    The coefficient of the absorption of two polarized photons is calculated for direct band gap semiconductors with degenerate valence bands. Wannier-Mott exciton states are included in both the intermediate and final states. Numerical calculations are performed for ZnSe and are compared with Sondergeld's experimental and theoretical results. (author). 11 refs, 2 tabs

  19. Photoemission electronic states of epitaxially grown magnetite films

    International Nuclear Information System (INIS)

    Zalecki, R.; Kolodziejczyk, A.; Korecki, J.; Spiridis, N.; Zajac, M.; Kozlowski, A.; Kakol, Z.; Antolak, D.

    2007-01-01

    The valence band photoemission spectra of epitaxially grown 300 A single crystalline magnetite films were measured by the angle-resolved ultraviolet photoemission spectroscopy (ARUPS) at 300 K. The samples were grown either on MgO(0 0 1) (B termination) or on (0 0 1) Fe (iron-rich A termination), thus intentionally presenting different surface stoichiometry, i.e. also different surface electronic states. Four main features of the electron photoemission at about -1.0, -3.0, -5.5 and -10.0 eV below a chemical potential show systematic differences for two terminations; this difference depends on the electron outgoing angle. Our studies confirm sensitivity of angle resolved PES technique on subtleties of surface states

  20. Lanthanide 4f-electron binding energies and the nephelauxetic effect in wide band gap compounds

    International Nuclear Information System (INIS)

    Dorenbos, Pieter

    2013-01-01

    Employing data from luminescence spectroscopy, the inter 4f-electron Coulomb repulsion energy U(6, A) in Eu 2+/3+ impurities together with the 5d-centroid energy shift ϵ c (1,3+,A) in Ce 3+ impurities in 40 different fluoride, chloride, bromide, iodide, oxide, sulfide, and nitride compounds has been determined. This work demonstrates that the chemical environment A affects the two energies in a similar fashion; a fashion that follows the anion nephelauxetic sequence F, O, Cl, Br, N, I, S, Se. One may then calculate U(6, A) from well established and accurate ϵ c (1,3+,A) values which are then used as input to the chemical shift model proposed in Dorenbos (2012) [19]. As output it provides the chemical shift of 4f-electron binding energy and therewith the 4f-electron binding energy relative to the vacuum energy. In addition this method provides a tool to routinely establish the binding energy of electrons at the top of the valence band (work function) and the bottom of the conduction band (electron affinity) throughout the entire family of inorganic compounds. How the electronic structure of the compound and lanthanide impurities therein change with type of compound and type of lanthanide is demonstrated. -- Highlights: ► A relationship between 5d centroid shift and 4f-electron Coulomb repulsion energy is established. ► Information on the absolute 4f-electron binding energy of lanthanides in 40 compounds is provided. ► A new tool to determine absolute binding energies of electrons in valence and conduction bands is demonstrated

  1. A class of monolayer metal halogenides MX{sub 2}: Electronic structures and band alignments

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Feng; Wang, Weichao; Luo, Xiaoguang; Cheng, Yahui; Dong, Hong; Liu, Hui; Wang, Wei-Hua, E-mail: whwangnk@nankai.edu.cn [Department of Electronics and Tianjin Key Laboratory of Photo-Electronic Thin Film Device and Technology, Nankai University, Tianjin 300071 (China); Xie, Xinjian [School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130 (China)

    2016-03-28

    With systematic first principles calculations, a class of monolayer metal halogenides MX{sub 2} (M = Mg, Ca, Zn, Cd, Ge, Pb; M = Cl, Br, I) has been proposed. Our study indicates that these monolayer materials are semiconductors with the band gaps ranging from 2.03 eV of ZnI{sub 2} to 6.08 eV of MgCl{sub 2}. Overall, the band gap increases with the increase of the electronegativity of the X atom or the atomic number of the metal M. Meanwhile, the band gaps of monolayer MgX{sub 2} (X = Cl, Br) are direct while those of other monolayers are indirect. Based on the band edge curvatures, the derived electron (m{sub e}) and hole (m{sub h}) effective masses of MX{sub 2} monolayers are close to their corresponding bulk values except that the m{sub e} of CdI{sub 2} is three times larger and the m{sub h} for PbI{sub 2} is twice larger. Finally, the band alignments of all the studied MX{sub 2} monolayers are provided using the vacuum level as energy reference. These theoretical results may not only introduce the monolayer metal halogenides family MX{sub 2} into the emerging two-dimensional materials, but also provide insights into the applications of MX{sub 2} in future electronic, visible and ultraviolet optoelectronic devices.

  2. Tight binding electronic band structure calculation of achiral boron nitride single wall nanotubes

    International Nuclear Information System (INIS)

    Saxena, Prapti; Sanyal, Sankar P

    2006-01-01

    In this paper we report the Tight-Binding method, for the electronic structure calculations of achiral single wall Boron Nitride nanotubes. We have used the contribution of π electron only to define the electronic band structure for the solid. The Zone-folding method is used for the Brillouin Zone definition. Calculation of tight binding model parameters is done by fitting them to available experimental results of two-dimensional hexagonal monolayers of Boron Nitride. It has been found that all the boron nitride nanotubes (both zigzag and armchair) are constant gap semiconductors with a band gap of 5.27eV. All zigzag BNNTs are found to be direct gap semiconductors while all armchair nanotubes are indirect gap semiconductors. (author)

  3. Importance of complex band structure and resonant states for tunneling

    Czech Academy of Sciences Publication Activity Database

    Dederichs, P. H.; Mavropoulos, Ph.; Wunnicke, O.; Papanikolaou, N.; Bellini, V.; Zeller, R.; Drchal, Václav; Kudrnovský, Josef

    2002-01-01

    Roč. 240, - (2002), s. 108-113 ISSN 0304-8853 R&D Projects: GA AV ČR IAA1010829; GA ČR GA202/00/0122; GA MŠk OC P5.30 Grant - others:TSR(XX) 01398 Institutional research plan: CEZ:AV0Z1010914 Keywords : magnetoresistance * tunneling * band structure * interface effects Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.046, year: 2002

  4. Solid-state physics for electronics

    CERN Document Server

    Moliton, Andre

    2009-01-01

    Describing the fundamental physical properties of materials used in electronics, the thorough coverage of this book will facilitate an understanding of the technological processes used in the fabrication of electronic and photonic devices. The book opens with an introduction to the basic applied physics of simple electronic states and energy levels. Silicon and copper, the building blocks for many electronic devices, are used as examples. Next, more advanced theories are developed to better account for the electronic and optical behavior of ordered materials, such as diamond, and disordered ma

  5. The behaviour of the moment of inertia curve in a recrossing of the ground state band and the super band in 158Er

    International Nuclear Information System (INIS)

    Dracoulis, G.D.

    1978-11-01

    The recrossing of the ground state band with the super band as an explanation for the second anomaly in 158 Er is examined in terms of the moment of inertia. A two band mixing calculation does not reproduce the experimenal moment of inertia curve

  6. Observations of Multi-band Structures in Double Star TC-1 PEACE Electron and HIA Ion Data

    Science.gov (United States)

    Mohan Narasimhan, K.; Fazakerley, A. N.; Grimald, S.; Dandouras, I. S.; Mihaljcic, B.; Kistler, L. M.; Owen, C. J.

    2015-12-01

    Several authors have reported inner magnetosphere observations of proton distributions confined to narrow energy bands in the range 1 - 25 keV (Smith and Hoffman (1974), etc). These structures have been described as "nose structures", with reference to their appearance in energy-time spectrograms and are also known as "bands" if they occur for extended periods of time. Multi-nose structures have been observed if 2 or more noses appear at the same time (Vallat et al., 2007). Gaps between "noses" (or "bands") have been explained in terms of the competing corotation, convection and magnetic gradient drifts. Charge exchange losses in slow drift paths for steady state scenarios and the role of substorm injections have also been considered (Li et al., 2000; Ebihara et al., 2004). We analyse observations of electron and ion multi-band structures frequently seen in Double-Star TC1 PEACE and HIA data. We present results from statistical surveys conducted using data from the duration of the mission. Furthermore, using a combination of both statistics and simulations, we test previous theories as to possible formation mechanisms and explore other possible explanations.

  7. From the Kohn-Sham band gap to the fundamental gap in solids. An integer electron approach.

    Science.gov (United States)

    Baerends, E J

    2017-06-21

    It is often stated that the Kohn-Sham occupied-unoccupied gap in both molecules and solids is "wrong". We argue that this is not a correct statement. The KS theory does not allow to interpret the exact KS HOMO-LUMO gap as the fundamental gap (difference (I - A) of electron affinity (A) and ionization energy (I), twice the chemical hardness), from which it indeed differs, strongly in molecules and moderately in solids. The exact Kohn-Sham HOMO-LUMO gap in molecules is much below the fundamental gap and very close to the much smaller optical gap (first excitation energy), and LDA/GGA yield very similar gaps. In solids the situation is different: the excitation energy to delocalized excited states and the fundamental gap (I - A) are very similar, not so disparate as in molecules. Again the Kohn-Sham and LDA/GGA band gaps do not represent (I - A) but are significantly smaller. However, the special properties of an extended system like a solid make it very easy to calculate the fundamental gap from the ground state (neutral system) band structure calculations entirely within a density functional framework. The correction Δ from the KS gap to the fundamental gap originates from the response part v resp of the exchange-correlation potential and can be calculated very simply using an approximation to v resp . This affords a calculation of the fundamental gap at the same level of accuracy as other properties of crystals at little extra cost beyond the ground state bandstructure calculation. The method is based on integer electron systems, fractional electron systems (an ensemble of N- and (N + 1)-electron systems) and the derivative discontinuity are not invoked.

  8. Electronic band structure of Two-Dimensional WS2/Graphene van der Waals Heterostructures

    Science.gov (United States)

    Henck, Hugo; Ben Aziza, Zeineb; Pierucci, Debora; Laourine, Feriel; Reale, Francesco; Palczynski, Pawel; Chaste, Julien; Silly, Mathieu G.; Bertran, François; Le Fèvre, Patrick; Lhuillier, Emmanuel; Wakamura, Taro; Mattevi, Cecilia; Rault, Julien E.; Calandra, Matteo; Ouerghi, Abdelkarim

    2018-04-01

    Combining single-layer two-dimensional semiconducting transition-metal dichalcogenides (TMDs) with a graphene layer in van der Waals heterostructures offers an intriguing means of controlling the electronic properties through these heterostructures. Here, we report the electronic and structural properties of transferred single-layer W S2 on epitaxial graphene using micro-Raman spectroscopy, angle-resolved photoemission spectroscopy measurements, and density functional theory (DFT) calculations. The results show good electronic properties as well as a well-defined band arising from the strong splitting of the single-layer W S2 valence band at the K points, with a maximum splitting of 0.44 eV. By comparing our DFT results with local and hybrid functionals, we find the top valence band of the experimental heterostructure is close to the calculations for suspended single-layer W S2 . Our results provide an important reference for future studies of electronic properties of W S2 and its applications in valleytronic devices.

  9. Electronic structures and valence band splittings of transition metals doped GaNs

    International Nuclear Information System (INIS)

    Lee, Seung-Cheol; Lee, Kwang-Ryeol; Lee, Kyu-Hwan

    2007-01-01

    For a practical viewpoint, presence of spin splitting of valence band in host semiconductors by the doping of transition metal (TM) ions is an essential property when designing a diluted magnetic semiconductors (DMS) material. The first principle calculations were performed on the electronic and magnetic structure of 3d transition metal doped GaN. V, Cr, and Mn doped GaNs could not be candidates for DMS materials since most of their magnetic moments is concentrated on the TM ions and the splittings of valence band were negligible. In the cases of Fe, Co, Ni, and Cu doped GaNs, on the contrary, long-ranged spin splitting of valence band was found, which could be candidates for DMS materials

  10. Ab initio electronic band structure study of III-VI layered semiconductors

    Science.gov (United States)

    Olguín, Daniel; Rubio-Ponce, Alberto; Cantarero, Andrés

    2013-08-01

    We present a total energy study of the electronic properties of the rhombohedral γ-InSe, hexagonal ɛ-GaSe, and monoclinic GaTe layered compounds. The calculations have been done using the full potential linear augmented plane wave method, including spin-orbit interaction. The calculated valence bands of the three compounds compare well with angle resolved photoemission measurements and a discussion of the small discrepancies found has been given. The present calculations are also compared with recent and previous band structure calculations available in the literature for the three compounds. Finally, in order to improve the calculated band gap value we have used the recently proposed modified Becke-Johnson correction for the exchange-correlation potential.

  11. Electron states and electron Raman scattering in semiconductor double cylindrical quantum well wire

    International Nuclear Information System (INIS)

    Munguía-Rodríguez, M; Riera, R; Betancourt-Riera, Ri; Betancourt-Riera, Re; Nieto Jalil, J M

    2016-01-01

    The differential cross section for an electron Raman scattering process in a semiconductor GaAs/AlGaAs double quantum well wire is calculated, and expressions for the electronic states are presented. The system is modeled by considering T = 0 K and also with a single parabolic conduction band, which is split into a subband system due to the confinement. The gain and differential cross-section for an electron Raman scattering process are obtained. In addition, the emission spectra for several scattering configurations are discussed, and interpretations of the singularities found in the spectra are given. The electron Raman scattering studied here can be used to provide direct information about the efficiency of the lasers. (paper)

  12. Sub-band gap photo-enhanced secondary electron emission from high-purity single-crystal chemical-vapor-deposited diamond

    International Nuclear Information System (INIS)

    Yater, J. E.; Shaw, J. L.; Pate, B. B.; Feygelson, T. I.

    2016-01-01

    Secondary-electron-emission (SEE) current measured from high-purity, single-crystal (100) chemical-vapor-deposited diamond is found to increase when sub-band gap (3.06 eV) photons are incident on the hydrogenated surface. Although the light does not produce photoemission directly, the SEE current increases by more than a factor of 2 before saturating with increasing laser power. In energy distribution curves (EDCs), the emission peak shows a corresponding increase in intensity with increasing laser power. However, the emission-onset energy in the EDCs remains constant, indicating that the bands are pinned at the surface. On the other hand, changes are observed on the high-energy side of the distribution as the laser power increases, with a well-defined shoulder becoming more pronounced. From an analysis of this feature in the EDCs, it is deduced that upward band bending is present in the near-surface region during the SEE measurements and this band bending suppresses the SEE yield. However, sub-band gap photon illumination reduces the band bending and thereby increases the SEE current. Because the bands are pinned at the surface, we conclude that the changes in the band levels occur below the surface in the electron transport region. Sample heating produces similar effects as observed with sub-band gap photon illumination, namely, an increase in SEE current and a reduction in band bending. However, the upward band bending is not fully removed by either increasing laser power or temperature, and a minimum band bending of ∼0.8 eV is established in both cases. The sub-band gap photo-excitation mechanism is under further investigation, although it appears likely at present that defect or gap states play a role in the photo-enhanced SEE process. In the meantime, the study demonstrates the ability of visible light to modify the electronic properties of diamond and enhance the emission capabilities, which may have potential impact for diamond-based vacuum electron

  13. Electronic structures and band gaps of chains and sheets based on phenylacetylene units

    International Nuclear Information System (INIS)

    Kondo, Masakazu; Nozaki, Daijiro; Tachibana, Masamitsu; Yumura, Takashi; Yoshizawa, Kazunari

    2005-01-01

    We investigate the electronic structures of polymers composed of π-conjugated phenylacetylene (PA) units, m-PA-based and p-PA-based wires, at the extended Hueckel level of theory. It is demonstrated that these conjugated systems should have a variety of electric conductance. All of the one-dimensional (1D) chains and the two-dimensional (2D) sheet based on the m-PA unit are insulators with large band gaps of 2.56 eV because there is no effective orbital interaction with neighboring chains. On the other hand, p-PA-based 1D chains have relatively small band gaps that decrease with an increase in chain width (1.17-1.74 eV) and are semiconductive. The p-PA-based sheet called 'graphyne', a 2D-limit of the p-PA-based 1D chains, shows a small band gap of 0.89 eV. The variety of band electronic structures is discussed in terms of frontier crystal orbitals

  14. Optical and electronic properties of 2 H -Mo S2 under pressure: Revealing the spin-polarized nature of bulk electronic bands

    Science.gov (United States)

    Brotons-Gisbert, Mauro; Segura, Alfredo; Robles, Roberto; Canadell, Enric; Ordejón, Pablo; Sánchez-Royo, Juan F.

    2018-05-01

    Monolayers of transition-metal dichalcogenide semiconductors present spin-valley locked electronic bands, a property with applications in valleytronics and spintronics that is usually believed to be absent in their centrosymmetric (as the bilayer or bulk) counterparts. Here we show that bulk 2 H -Mo S2 hides a spin-polarized nature of states determining its direct band gap, with the spin sequence of valence and conduction bands expected for its single layer. This relevant finding is attained by investigating the behavior of the binding energy of A and B excitons under high pressure, by means of absorption measurements and density-functional-theory calculations. These results raise an unusual situation in which bright and dark exciton degeneracy is naturally broken in a centrosymmetric material. Additionally, the phonon-assisted scattering process of excitons has been studied by analyzing the pressure dependence of the linewidth of discrete excitons observed at the absorption coefficient edge of 2 H -Mo S2 . Also, the pressure dependence of the indirect optical transitions of bulk 2 H -Mo S2 has been analyzed by absorption measurements and density-functional-theory calculations. These results reflect a progressive closure of the indirect band gap as pressure increases, indicating that metallization of bulk Mo S2 may occur at pressures higher than 26 GPa.

  15. Electron spectroscopy of nanodiamond surface states

    Energy Technology Data Exchange (ETDEWEB)

    Belobrov, P.I.; Bursill, L.A.; Maslakov, K.I.; Dementjev, A.P

    2003-06-15

    Electronic states of nanodiamond (ND) were investigated by PEELS, XPS and CKVV Auger spectra. Parallel electron energy loss spectra (PEELS) show that the electrons inside of ND particles are sp{sup 3} hybridized but there is a surface layer containing distinct hybridized states. The CKVV Auger spectra imply that the HOMO of the ND surface has a shift of 2.5 eV from natural diamond levels of {sigma}{sub p} up to the Fermi level. Hydrogen (H) treatment of natural diamond surface produces a chemical state indistinguishable from that of ND surfaces using CKVV. The ND electronic structure forms {sigma}{sub s}{sup 1}{sigma}{sub p}{sup 2}{pi}{sup 1} surface states without overlapping of {pi}-levels. Surface electronic states, including surface plasmons, as well as phonon-related electronic states of the ND surface are also interesting and may also be important for field emission mechanisms from the nanostructured diamond surface.

  16. An atomic orbital based real-time time-dependent density functional theory for computing electronic circular dichroism band spectra

    Energy Technology Data Exchange (ETDEWEB)

    Goings, Joshua J.; Li, Xiaosong, E-mail: xsli@uw.edu [Department of Chemistry, University of Washington, Seattle, Washington 98195 (United States)

    2016-06-21

    One of the challenges of interpreting electronic circular dichroism (ECD) band spectra is that different states may have different rotatory strength signs, determined by their absolute configuration. If the states are closely spaced and opposite in sign, observed transitions may be washed out by nearby states, unlike absorption spectra where transitions are always positive additive. To accurately compute ECD bands, it is necessary to compute a large number of excited states, which may be prohibitively costly if one uses the linear-response time-dependent density functional theory (TDDFT) framework. Here we implement a real-time, atomic-orbital based TDDFT method for computing the entire ECD spectrum simultaneously. The method is advantageous for large systems with a high density of states. In contrast to previous implementations based on real-space grids, the method is variational, independent of nuclear orientation, and does not rely on pseudopotential approximations, making it suitable for computation of chiroptical properties well into the X-ray regime.

  17. Determination of density of band-gap states of hydrogenated amorphous silicon suboxide thin films

    International Nuclear Information System (INIS)

    Bacioglu, A.

    2005-01-01

    Variation of density of gap states of PECVD silicon suboxide films with different oxygen concentrations was evaluated through electrical and optical measurements. Optical transmission and constant photocurrent method (CPM) were used to determine absorption coefficient as a function of photon energy. From these measurements the localized density of states between the valance band mobility edge and Fermi level has been determined. To determine the variation of conduction band edge, steady state photoconductivity (SSPC), photoconductivity response time (PCRT) and transient photoconductivity (TPC) measurements were utilized. Results indicate that the conduction and valance band edges, both, widen monotonically with oxygen content

  18. Microstructural evolution in adiabatic shear bands of copper at high strain rates: Electron backscatter diffraction characterization

    International Nuclear Information System (INIS)

    Tang Lin; Chen Zhiyong; Zhan Congkun; Yang Xuyue; Liu Chuming; Cai Hongnian

    2012-01-01

    The microstructural evolution of adiabatic shear bands in annealed copper with different large strains at high strain rates has been investigated by electron backscatter diffraction. The results show that mechanical twinning can occur with minimal contribution to shear localization under dynamic loading. Elongated ultrafine grains with widths of 100–300 nm are observed during the evolution of the adiabatic shear bands. A rotational dynamic recrystallization mechanism is proposed to explain the formation of the elongated ultrafine grains. - Highlights: ► The microstructural evolution of ASB is studied by electron backscatter diffraction. ► Twinning can occur in ASB while the contribution to shear localization is slight. ► Elongated ultrafine grains are observed during the evolution process of ASB. ► A possible mechanism is proposed to explain the microstructure evolution of ASB.

  19. Using the Elements of Cooperative Learning in School Band Classes in the United States

    Science.gov (United States)

    Whitener, John L.

    2016-01-01

    The purpose of this article is to answer the question of how we might use the elements of cooperative learning in school band classes in the United States. Current school band programs use age-old traditions that overemphasize group and individual competitiveness, stress large ensemble performance at the expense of all other activities, are…

  20. Electronic band structure and optical properties of antimony selenide under pressure

    Energy Technology Data Exchange (ETDEWEB)

    Abhijit, B.K.; Jayaraman, Aditya; Molli, Muralikrishna, E-mail: muralikrishnamolli@sssihl.edu.in [Department of Physics, Sri Sathya Sai Institute of Higher Learning, Prasanthinilayam, 515 134 (India)

    2016-05-23

    In this work we present the optical properties of Antimony Selenide (Sb{sub 2}Se{sub 3}) under ambient conditions and under pressure of 9.2 GPa obtained using first principles calculations. We investigated the electronic band structure using the FP-LAPW method within the sphere of the density functional theory. Optical properties like refractive index, absorption coefficient and optical conductivity are calculated using the WIEN2k code.

  1. A five-picosecond electron pulse from ANL (Argonne National Laboratory) L-Band Linac

    International Nuclear Information System (INIS)

    Cox, G.L.; Jonah, C.D.; Ficht, D.T.; Mavrogenes, G.S.; Sauer, M.C. Jr.

    1989-01-01

    The pulse-compression system of the Argonne National Laboratory Chemistry Division L-Band Linac, presented at the 1986 Linear Accelerator Conference at Stanford, California, has been completed. A five-picosecond-wide electron pulse containing 6 x 10 -9 coulomb charge has been achieved. Acceleration parameters and the pulse-width measurement technique are discussed, and future plans for the utilization of this pulse in radiation chemistry studies are presented. 5 refs., 4 figs

  2. State-to-state photodissociation dynamics of triatomic molecules: H2O in the B band

    International Nuclear Information System (INIS)

    Jiang Bin; Xie Daiqian; Guo Hua

    2012-01-01

    State-to-state photodissociation dynamics of H 2 O in its B band has been investigated quantum mechanically on a new set of non-adiabatically coupled potential energy surfaces for the lowest two 1 A' states of H 2 O, which are developed at the internally contracted multi-reference configuration interaction level with the aug-cc-pVQZ basis set. Quantum dynamical calculations carried out using the Chebyshev propagator yield absorption spectra, product state distributions, branching ratios, and differential cross sections, which are in reasonably good agreement with the latest experimental results. Particular focus is placed here on the dependence of various dynamical observables on the photon energy. Detailed analyses of the dynamics have assigned the diffuse structure in absorption spectrum to short-time recurring dynamics near the HOH conical intersection. The non-adiabatic dissociation to the ground state OH product via the HOH conical intersection is facile, direct, fast, and produces rotationally hot OH(X-tilde) products. On the other hand, the adiabatic channel on the excited state leading to the OH(A-tilde) product is dominated by long-lived resonances, which depend sensitively on the potential energy surfaces.

  3. Band electron spectrum and thermodynamic properties of the pseudospin-electron model with tunneling splitting of levels

    Directory of Open Access Journals (Sweden)

    O.Ya.Farenyuk

    2006-01-01

    Full Text Available The pseudospin-electron model with tunneling splitting of levels is considered. Generalization of dynamic mean-field method for systems with correlated hopping was applied to the investigation of the model. Electron spectra, electron concentrations, average values of pseudospins and grand canonical potential were calculated within the alloy-analogy approximation. Electron spectrum and dependencies of the electron concentrations on chemical potential were obtained. It was shown that in the alloy-analogy approximation, the model possesses the first order phase transition to ferromagnetic state with the change of chemical potential and the second order phase transition with the change of temperature.

  4. The use of bulk states to accelerate the band edge state calculation of a semiconductor quantum dot

    International Nuclear Information System (INIS)

    Voemel, Christof; Tomov, Stanimire Z.; Wang, Lin-Wang; Marques, Osni A.; Dongarra, Jack J.

    2007-01-01

    We present a new technique to accelerate the convergence of the folded spectrum method in empirical pseudopotential band edge state calculations for colloidal quantum dots. We use bulk band states of the materials constituent of the quantum dot to construct initial vectors and a preconditioner. We apply these to accelerate the convergence of the folded spectrum method for the interior states at the top of the valence and the bottom of the conduction band. For large CdSe quantum dots, the number of iteration steps until convergence decreases by about a factor of 4 compared to previous calculations

  5. Electronic states of graphene nanoribbons and analytical solutions

    Directory of Open Access Journals (Sweden)

    Katsunori Wakabayashi, Ken-ichi Sasaki, Takeshi Nakanishi and Toshiaki Enoki

    2010-01-01

    Full Text Available Graphene is a one-atom-thick layer of graphite, where low-energy electronic states are described by the massless Dirac fermion. The orientation of the graphene edge determines the energy spectrum of π-electrons. For example, zigzag edges possess localized edge states with energies close to the Fermi level. In this review, we investigate nanoscale effects on the physical properties of graphene nanoribbons and clarify the role of edge boundaries. We also provide analytical solutions for electronic dispersion and the corresponding wavefunction in graphene nanoribbons with their detailed derivation using wave mechanics based on the tight-binding model. The energy band structures of armchair nanoribbons can be obtained by making the transverse wavenumber discrete, in accordance with the edge boundary condition, as in the case of carbon nanotubes. However, zigzag nanoribbons are not analogous to carbon nanotubes, because in zigzag nanoribbons the transverse wavenumber depends not only on the ribbon width but also on the longitudinal wavenumber. The quantization rule of electronic conductance as well as the magnetic instability of edge states due to the electron–electron interaction are briefly discussed.

  6. The effect of density-of-state tails on band-to-band tunneling: Theory and application to tunnel field effect transistors

    Science.gov (United States)

    Sant, S.; Schenk, A.

    2017-10-01

    It is demonstrated how band tail states in the semiconductor influence the performance of a Tunnel Field Effect Transistor (TFET). As a consequence of the smoothened density of states (DOS) around the band edges, the energetic overlap of conduction and valence band states occurs gradually at the onset of band-to-band tunneling (BTBT), thus degrading the sub-threshold swing (SS) of the TFET. The effect of the band tail states on the current-voltage characteristics is modelled quantum-mechanically based on the idea of zero-phonon trap-assisted tunneling between band and tail states. The latter are assumed to arise from a 3-dimensional pseudo-delta potential proposed by Vinogradov [1]. This model potential allows the derivation of analytical expressions for the generation rate covering the whole range from very strong to very weak localization of the tail states. Comparison with direct BTBT in the one-band effective mass approximation reveals the essential features of tail-to-band tunneling. Furthermore, an analytical solution for the problem of tunneling from continuum states of the disturbed DOS to states in the opposite band is found, and the differences to direct BTBT are worked out. Based on the analytical expressions, a semi-classical model is implemented in a commercial device simulator which involves numerical integration along the tunnel paths. The impact of the tail states on the device performance is analyzed for a nanowire Gate-All-Around TFET. The simulations show that tail states notably impact the transfer characteristics of a TFET. It is found that exponentially decaying band tails result in a stronger degradation of the SS than tail states with a Gaussian decay of their density. The developed model allows more realistic simulations of TFETs including their non-idealities.

  7. Band Alignment Determination of Two-Dimensional Heterojunctions and Their Electronic Applications

    KAUST Repository

    Chiu, Ming-Hui

    2018-05-09

    Two-dimensional (2D) layered materials such as MoS2 have been recognized as high on-off ratio semiconductors which are promising candidates for electronic and optoelectronic devices. In addition to the use of individual 2D materials, the accelerated field of 2D heterostructures enables even greater functionalities. Device designs differ, and they are strongly controlled by the electronic band alignment. For example, photovoltaic cells require type II heterostructures for light harvesting, and light-emitting diodes benefit from multiple quantum wells with the type I band alignment for high emission efficiency. The vertical tunneling field-effect transistor for next-generation electronics depends on nearly broken-gap band alignment for boosting its performance. To tailor these 2D layered materials toward possible future applications, the understanding of 2D heterostructure band alignment becomes critically important. In the first part of this thesis, we discuss the band alignment of 2D heterostructures. To do so, we firstly study the interlayer coupling between two dissimilar 2D materials. We conclude that a post-anneal process could enhance the interlayer coupling of as-transferred 2D heterostructures, and heterostructural stacking imposes similar symmetry changes as homostructural stacking. Later, we precisely determine the quasi particle bandgap and band alignment of the MoS2/WSe2 heterostructure by using scan tunneling microscopy/spectroscopy (STM/S) and micron-beam X-ray photoelectron spectroscopy (μ-XPS) techniques. Lastly, we prove that the band alignment of 2D heterojunctions can be accurately predicted by Anderson’s model, which has previously failed to predict conventional bulk heterostructures. In the second part of this thesis, we develop a new Chemical Vapor Deposition (CVD) method capable of precisely controlling the growth area of p- and n-type transition metal dichalcogenides (TMDCs) and further form lateral or vertical 2D heterostructures. This

  8. Band-gap-confinement and image-state-recapture effects in the survival of anions scattered from metal surfaces

    International Nuclear Information System (INIS)

    Schmitz, Andrew; Shaw, John; Chakraborty, Himadri S.; Thumm, Uwe

    2010-01-01

    The resonant charge transfer process in the collision of hydrogen anions with metal surfaces is described within a single-active-electron wave-packet propagation method. The ion-survival probability is found to be strongly enhanced at two different surface-specific perpendicular velocities of the ion. It is shown that, while the low-velocity enhancement is induced from a dynamical confinement of the ion level inside the band gap, the high-velocity enhancement is due to electron recapture from transiently populated image states. Results are presented for Li(110), Cu(111), and Pd(111) surfaces.

  9. Statistical analysis of the electronic crosstalk correction in Terra MODIS Band 27

    Science.gov (United States)

    Madhavan, Sriharsha; Sun, Junqiang; Xiong, Xiaoxiong; Wenny, Brian N.; Wu, Aisheng

    2014-10-01

    The first MODerate-resolution Imaging Spectroradiometer (MODIS), also known as the Proto-Flight model (PFM), is on-board the Terra spacecraft and has completed 14 years of on orbit flight as of December 18, 2013. MODIS remotely senses the Earth in 36 spectral bands, with a wavelength range from 0.4 μm to 14.4 μm. The 36 bands can be subdivided into two groups based on their spectral responsivity as Reflective Solar Bands (RSBs) and Thermal Emissive Bands (TEBs). Band 27 centered at 6.77 μm is a TEB used to study the global water vapor distribution. It was found recently that this band has been severely affected by electronic crosstalk. The electronic crosstalk magnitude, its on-orbit change and calibration impact have been well characterized in our previous studies through the use of regularly scheduled lunar observations. Further, the crosstalk correction was implemented in Earth view (EV) images and quantified the improvements of the same. However, improvements remained desirable on several fronts. Firstly, the effectiveness of the correction needed to be analyzed spatially and radiometrically over a number of scenes. Also, the temporal aspect of the correction had to be investigated in a rigorous manner. In order to address these issues, a one-orbit analysis was performed on the Level 1A (L1A) scene granules over a ten year period from 2003 through 2012. Results have been quantified statistically and show a significant reduction of image striping, as well as removal of leaked signal features from the neighboring bands. Statistical analysis was performed by analyzing histograms of the one-orbit granules at a scene and detector level before and after correction. The comprehensive analysis and results reported in this paper will be very helpful to the scientific community in understanding the impacts of crosstalk correction on various scenes and could potentially be applied for future improvements of band 27 calibration and, therefore, its retrieval for the

  10. High gain harmonic generation free electron lasers enhanced by pseudoenergy bands

    Directory of Open Access Journals (Sweden)

    Takashi Tanaka

    2017-08-01

    Full Text Available We propose a new scheme for high gain harmonic generation free electron lasers (HGHG FELs, which is seeded by a pair of intersecting laser beams to interact with an electron beam in a modulator undulator located in a dispersive section. The interference of the laser beams gives rise to a two-dimensional modulation in the energy-time phase space because of a strong correlation between the electron energy and the position in the direction of dispersion. This eventually forms pseudoenergy bands in the electron beam, which result in efficient harmonic generation in HGHG FELs in a similar manner to the well-known scheme using the echo effects. The advantage of the proposed scheme is that the beam quality is less deteriorated than in other existing schemes.

  11. Determination of electronic states in crystalline semiconductors and metals by angle-resolved photoemission

    International Nuclear Information System (INIS)

    Mills, K.A.

    1979-08-01

    An important part of the theoretical description of the solid state is band structure, which relies on the existence of dispersion relations connecting the electronic energy and wavevector in materials with translational symmetry. These relations determine the electronic behavior of such materials. The elaboration of accurate band structures, therefore, is of considerable fundamental and practical importance. Angle-resolved photoemission (ARP) spectroscopy provides the only presently available method for the detailed experimental investigation of band structures. This work is concerned with its application to both semiconducting and metallic single crystals

  12. Banded Structures in Electron Pitch Angle Diffusion Coefficients from Resonant Wave Particle Interactions

    Science.gov (United States)

    Tripathi, A. K.; Singhal, R. P.; Khazanov, G. V.; Avanov, L. A.

    2016-01-01

    Electron pitch angle (D (alpha)) and momentum (D(pp)) diffusion coefficients have been calculated due to resonant interactions with electrostatic electron cyclotron harmonic (ECH) and whistler mode chorus waves. Calculations have been performed at two spatial locations L = 4.6 and 6.8 for electron energies 10 keV. Landau (n = 0) resonance and cyclotron harmonic resonances n = +/-1, +/-2,...+/-5 have been included in the calculations. It is found that diffusion coefficient versus pitch angle (alpha) profiles show large dips and oscillations or banded structures. The structures are more pronounced for ECH and lower band chorus (LBC) and particularly at location 4.6. Calculations of diffusion coefficients have also been performed for individual resonances. It is noticed that the main contribution of ECH waves in pitch angle diffusion coefficient is due to resonances n = +1 and n = +2. A major contribution to momentum diffusion coefficients appears from n = +2. However, the banded structures in D alpha and Dpp coefficients appear only in the profile of diffusion coefficients for n = +2. The contribution of other resonances to diffusion coefficients is found to be, in general, quite small or even negligible. For LBC and upper band chorus waves, the banded structures appear only in Landau resonance. The Dpp diffusion coefficient for ECH waves is one to two orders smaller than D alpha coefficients. For chorus waves, Dpp coefficients are about an order of magnitude smaller than D alpha coefficients for the case n does not = 0. In case of Landau resonance, the values of Dpp coefficient are generally larger than the values of D alpha coefficients particularly at lower energies. As an aid to the interpretation of results, we have also determined the resonant frequencies. For ECH waves, resonant frequencies have been estimated for wave normal angle 89 deg and harmonic resonances n = +1, +2, and +3, whereas for whistler mode waves, the frequencies have been calculated for angle

  13. Banded Structures in Electron Pitch Angle Diffusion Coefficients from Resonant Wave-Particle Interactions

    Science.gov (United States)

    Tripathi, A. K.; Singhal, R. P.; Khazanov, G. V.; Avanov, L. A.

    2016-01-01

    Electron pitch angle (D(sub (alpha alpha))) and momentum (D(sub pp)) diffusion coefficients have been calculated due to resonant interactions with electrostatic electron cyclotron harmonic (ECH) and whistler mode chorus waves. Calculations have been performed at two spatial locations L=4.6 and 6.8 for electron energies less than or equal to 10 keV. Landau (n=0) resonance and cyclotron harmonic resonances n= +/- 1, +/-2, ... +/-5 have been included in the calculations. It is found that diffusion coefficient versus pitch angle (alpha) profiles show large dips and oscillations or banded structures. The structures are more pronounced for ECH and lower band chorus (LBC) and particularly at location 4.6. Calculations of diffusion coefficients have also been performed for individual resonances. It is noticed that the main contribution of ECH waves in pitch angle diffusion coefficient is due to resonances n=+1 and n=+2. A major contribution to momentum diffusion coefficients appears from n=+2. However, the banded structures in D(sub alpha alpha) and D(sub pp) coefficients appear only in the profile of diffusion coefficients for n=+2. The contribution of other resonances to diffusion coefficients is found to be, in general, quite small or even negligible. For LBC and upper band chorus waves, the banded structures appear only in Landau resonance. The D(sub pp) diffusion coefficient for ECH waves is one to two orders smaller than D(sub alpha alpha) coefficients. For chorus waves, D(sub pp) coefficients are about an order of magnitude smaller than D(sub alpha alpha) coefficients for the case n does not equal 0. In case of Landau resonance, the values of D(sub pp) coefficient are generally larger than the values of D(sub alpha alpha) coefficients particularly at lower energies. As an aid to the interpretation of results, we have also determined the resonant frequencies. For ECH waves, resonant frequencies have been estimated for wave normal angle 89 deg and harmonic resonances

  14. Correlation between morphology, electron band structure, and resistivity of Pb atomic chains on the Si(5 5 3)-Au surface

    International Nuclear Information System (INIS)

    Jałochowski, M; Kwapiński, T; Łukasik, P; Nita, P; Kopciuszyński, M

    2016-01-01

    Structural and electron transport properties of multiple Pb atomic chains fabricated on the Si(5 5 3)-Au surface are investigated using scanning tunneling spectroscopy, reflection high electron energy diffraction, angular resolved photoemission electron spectroscopy and in situ electrical resistance. The study shows that Pb atomic chains growth modulates the electron band structure of pristine Si(5 5 3)-Au surface and hence changes its sheet resistivity. Strong correlation between chains morphology, electron band structure and electron transport properties is found. To explain experimental findings a theoretical tight-binding model of multiple atomic chains interacting on effective substrate is proposed. (paper)

  15. Influence of linear-energy-dependent density of states on two-band superconductors: Three-square-well model approach

    International Nuclear Information System (INIS)

    Ogbuu, O.A.; Abah, O.C.; Asomba, G.C.; Okoye, C.M.I.

    2011-01-01

    We derived the transition temperature and the isotope exponent of two-band superconductor. We employed Bogoliubov-Valatin formalism assuming a three-square-well potential. The effect of linear-energy-dependent electronic DOS in superconductors is considered. The relevance of the studies to MgB 2 is analyzed. We have derived the expressions for the transition temperature and the isotope effect exponent within the framework of Bogoliubov-Valatin two-band formalism using a linear-energy-dependent electronic density of states assuming a three-square-well potentials model. Our results show that the approach could be used to account for a wide range of values of the transition temperature and isotope effect exponent. The relevance of the present calculations to MgB 2 is analyzed.

  16. Electron-phonon interactions and intrinsic nonadiabatic state of superconductors

    International Nuclear Information System (INIS)

    Banacky, Pavol

    2007-01-01

    Study of band structure of YBa 2 Cu 3 O 7 has shown that electron coupling to A g , B 2g and B 3g modes results in fluctuation of saddle point of one of the CuO plane d-pσ band in Y point of 1st BZ across Fermi level. It represents breakdown of adiabatic Born-Oppenheimer approximation and transition of the system into intrinsic nonadiabatic state, ω > E F . Results show that system is stabilized in this state at distorted nuclear geometry. Stabilization effect is mainly due to strong dependence of the electronic motion on instantaneous nuclear momenta. On the lattice scale, the intrinsic nonadiabatic state is geometrically degenerate at broken translation symmetry - system has fluxional nuclear configuration of O2, O3 atoms in CuO planes. It enables formation of mobile bipolarons that can move in the lattice without dissipation. Described effects are absent in non-superconducting YBa 2 Cu 3 O 6

  17. Electron phonon interactions and intrinsic nonadiabatic state of superconductors

    Science.gov (United States)

    Baňacký, Pavol

    2007-09-01

    Study of band structure of YBa 2Cu 3O 7 has shown that electron coupling to A g, B 2g and B 3g modes results in fluctuation of saddle point of one of the CuO plane d-pσ band in Y point of 1st BZ across Fermi level. It represents breakdown of adiabatic Born-Oppenheimer approximation and transition of the system into intrinsic nonadiabatic state, ω > EF. Results show that system is stabilized in this state at distorted nuclear geometry. Stabilization effect is mainly due to strong dependence of the electronic motion on instantaneous nuclear momenta. On the lattice scale, the intrinsic nonadiabatic state is geometrically degenerate at broken translation symmetry - system has fluxional nuclear configuration of O2, O3 atoms in CuO planes. It enables formation of mobile bipolarons that can move in the lattice without dissipation. Described effects are absent in non-superconducting YBa 2Cu 3O 6.

  18. Electronic band structures and optical properties of type-II superlattice photodetectors with interfacial effect.

    Science.gov (United States)

    Qiao, Peng-Fei; Mou, Shin; Chuang, Shun Lien

    2012-01-30

    The electronic band structures and optical properties of type-II superlattice (T2SL) photodetectors in the mid-infrared (IR) range are investigated. We formulate a rigorous band structure model using the 8-band k · p method to include the conduction and valence band mixing. After solving the 8 × 8 Hamiltonian and deriving explicitly the new momentum matrix elements in terms of envelope functions, optical transition rates are obtained through the Fermi's golden rule under various doping and injection conditions. Optical measurements on T2SL photodetectors are compared with our model and show good agreement. Our modeling results of quantum structures connect directly to the device-level design and simulation. The predicted doping effect is readily applicable to the optimization of photodetectors. We further include interfacial (IF) layers to study the significance of their effect. Optical properties of T2SLs are expected to have a large tunable range by controlling the thickness and material composition of the IF layers. Our model provides an efficient tool for the designs of novel photodetectors.

  19. Observation of total electron content and irregularities in electron density using GHz band radiowaves emitted from satellite

    International Nuclear Information System (INIS)

    Ogawa, Tadahiko; Fujita, Masaharu; Awaka, Jun.

    1978-01-01

    The experiments to investigate the influence of troposphere on millimeter and sub-millimeter wave propagation were carried out, using the engineering test satellite -- 2 (ETS-2) which became the Japanese first stationary satellite and carries the transmitter emitting beacon waves of 1.7, 11.5 and 34.5 GHz coherent each other. By these experiments, it was found that the waves of 1.7 and 11.5 GHz were affected by the ionosphere. The measurement of total electron content using GHz band waves was the first trial in the world, and is capable of grasping its change with higher accuracy than conventional methods. Scintillation of 1.7 GHz is mainly the phenomenon during night, and it was revealed that it has a peak at 22.30 local time and occurred through the radiowave scattering owing to the irregularities of the ionosphere. It is also suggested that some plasma instability is generated in the place where electron density gradient in the ionosphere is large, and the irregularities of fine scale are produced, assuming from GHz band scintillations at the time of magnetic storm. The relations among wave number spectrum, scintillation frequency spectrum and S4 index (statistical quantity to give estimate for scintillation amplitude) can be derived by the weak scattering theory (Simple scattering theory). As seen above, the diagnosis of plasma disturbances in the ionosphere is feasible by the simultaneous observations of total electron content and scintillation. (Wakatsuki, Y.)

  20. Solid-state electronic devices an introduction

    CERN Document Server

    Papadopoulos, Christo

    2014-01-01

    A modern and concise treatment of the solid state electronic devices that are fundamental to electronic systems and information technology is provided in this book. The main devices that comprise semiconductor integrated circuits are covered in a clear manner accessible to the wide range of scientific and engineering disciplines that are impacted by this technology. Catering to a wider audience is becoming increasingly important as the field of electronic materials and devices becomes more interdisciplinary, with applications in biology, chemistry and electro-mechanical devices (to name a few) becoming more prevalent. Updated and state-of-the-art advancements are included along with emerging trends in electronic devices and their applications. In addition, an appendix containing the relevant physical background will be included to assist readers from different disciplines and provide a review for those more familiar with the area. Readers of this book can expect to derive a solid foundation for understanding ...

  1. Optical band gap of ZnO thin films deposited by electron beam evaporation

    International Nuclear Information System (INIS)

    Nadeem, M. Y.; Ali, S. L.; Wasiq, M. F.; Rana, A. M.

    2006-01-01

    Optical band gap of ZnO thin films deposited by electron beam evaporation at evaporation rates ranging 5 As/sup -1/ to 15 As /sup -1/ and thickness ranging 1000A to 3000A is presented. Deposited films were annealed at 573K for one and half hour. The variations in the optical band gap were observed and showed decreasing behavior from 3.15 eV, 3.05 eV, from 3.18 eV to 3.10 eV and from 3.19 eV to 3.18 eV for films with respective thickness 1000A, 2000 A, 3000 A on increasing the evaporation rate from 5 As/sup-1/ to As/sup -1/ by keeping thickness constant. (author)

  2. The electronic band parameters calculated by the Kronig-Penney method for Cd1-xZnxS quantum dot superlattices

    International Nuclear Information System (INIS)

    Sakly, A.; Safta, N.; Mejri, H.; Lamine, A. Ben

    2009-01-01

    This work reports on a theoretical study of superlattices based on Cd 1-x Zn x S quantum dots embedded in an insulating material. We show, in particular, how this system can be assumed to a series of flattened cylindrical quantum dots with a finite barrier height at the boundary. In this paper, are also reviewed the approximations needed to calculate the band edges of the Cd 1-x Zn x S superlattices with use of the Kronig-Penney model. The electronic states and the electron effective masses of both Γ 1 - and Γ 2 -minibands have been computed as a function of zinc composition for different inter-quantum dot separations. As is found, the CdS system is appropriate to give rise a superlattice behavior for conduction electrons in a relatively large range of inter-sheet separations. An attempt to explain the electron band parameters calculated will be presented.

  3. Determining the band gap and mean kinetic energy of atoms from reflection electron energy loss spectra

    Energy Technology Data Exchange (ETDEWEB)

    Vos, M. [Atomic and Molecular Physics Laboratories, Research School of Physics and Engineering, Australian National University, Canberra ACT (Australia); Marmitt, G. G. [Atomic and Molecular Physics Laboratories, Research School of Physics and Engineering, Australian National University, Canberra ACT (Australia); Instituto de Fisica da Universidade Federal do Rio Grande do Sul, Avenida Bento Goncalves 9500, 91501-970 Porto Alegre, RS (Brazil); Finkelstein, Y. [Nuclear Research Center — Negev, Beer-Sheva 84190 (Israel); Moreh, R. [Physics Department, Ben-Gurion University of the Negev, Beer-Sheva 84105 (Israel)

    2015-09-14

    Reflection electron energy loss spectra from some insulating materials (CaCO{sub 3}, Li{sub 2}CO{sub 3}, and SiO{sub 2}) taken at relatively high incoming electron energies (5–40 keV) are analyzed. Here, one is bulk sensitive and a well-defined onset of inelastic excitations is observed from which one can infer the value of the band gap. An estimate of the band gap was obtained by fitting the spectra with a procedure that includes the recoil shift and recoil broadening affecting these measurements. The width of the elastic peak is directly connected to the mean kinetic energy of the atom in the material (Doppler broadening). The experimentally obtained mean kinetic energies of the O, C, Li, Ca, and Si atoms are compared with the calculated ones, and good agreement is found, especially if the effect of multiple scattering is taken into account. It is demonstrated experimentally that the onset of the inelastic excitation is also affected by Doppler broadening. Aided by this understanding, we can obtain a good fit of the elastic peak and the onset of inelastic excitations. For SiO{sub 2}, good agreement is obtained with the well-established value of the band gap (8.9 eV) only if it is assumed that the intensity near the edge scales as (E − E{sub gap}){sup 1.5}. For CaCO{sub 3}, the band gap obtained here (7 eV) is about 1 eV larger than the previous experimental value, whereas the value for Li{sub 2}CO{sub 3} (7.5 eV) is the first experimental estimate.

  4. Engineering the electronic band structures of novel cubic structured germanium monochalcogenides for thermoelectric applications

    Science.gov (United States)

    Ul Haq, Bakhtiar; AlFaify, S.; Ahmed, R.; Butt, Faheem K.; Laref, A.; Goumri-Said, Souraya; Tahir, S. A.

    2018-05-01

    Germanium mono-chalcogenides have received considerable attention for being a promising replacement for the relatively toxic and expensive chalcogenides in renewable and sustainable energy applications. In this paper, we explore the potential of the recently discovered novel cubic structured (π-phase) GeS and GeSe for thermoelectric applications in the framework of density functional theory coupled with Boltzmann transport theory. To examine the modifications in their physical properties, the across composition alloying of π-GeS and π-GeSe (such as π-GeS1-xSex for x =0, 0.25, 0.50, 0.75, and 1) has been performed that has shown important effects on the electronic band structures and effective masses of charge carriers. An increase in Se composition in π-GeS1-xSex has induced a downward shift in their conduction bands, resulting in the narrowing of their energy band gaps. The thermoelectric coefficients of π-GeS1-xSex have been accordingly influenced by the evolution of the electronic band structures and effective masses of charge carriers. π-GeS1-xSex features sufficiently larger values of Seebeck coefficients, power factors and figures of merit (ZTs), which experience further improvement with an increase in temperature, revealing their potential for high-temperature applications. The calculated results show that ZT values equivalent to unity can be achieved for π-GeS1-xSex at appropriate n-type doping levels. Our calculations for the formation enthalpies indicate that a π-GeS1-xSex alloying system is energetically stable and could be synthesized experimentally. These intriguing characteristics make π-GeS1-xSex a promising candidate for futuristic thermoelectric applications in energy harvesting devices.

  5. Determining the band gap and mean kinetic energy of atoms from reflection electron energy loss spectra

    International Nuclear Information System (INIS)

    Vos, M.; Marmitt, G. G.; Finkelstein, Y.; Moreh, R.

    2015-01-01

    Reflection electron energy loss spectra from some insulating materials (CaCO 3 , Li 2 CO 3 , and SiO 2 ) taken at relatively high incoming electron energies (5–40 keV) are analyzed. Here, one is bulk sensitive and a well-defined onset of inelastic excitations is observed from which one can infer the value of the band gap. An estimate of the band gap was obtained by fitting the spectra with a procedure that includes the recoil shift and recoil broadening affecting these measurements. The width of the elastic peak is directly connected to the mean kinetic energy of the atom in the material (Doppler broadening). The experimentally obtained mean kinetic energies of the O, C, Li, Ca, and Si atoms are compared with the calculated ones, and good agreement is found, especially if the effect of multiple scattering is taken into account. It is demonstrated experimentally that the onset of the inelastic excitation is also affected by Doppler broadening. Aided by this understanding, we can obtain a good fit of the elastic peak and the onset of inelastic excitations. For SiO 2 , good agreement is obtained with the well-established value of the band gap (8.9 eV) only if it is assumed that the intensity near the edge scales as (E − E gap ) 1.5 . For CaCO 3 , the band gap obtained here (7 eV) is about 1 eV larger than the previous experimental value, whereas the value for Li 2 CO 3 (7.5 eV) is the first experimental estimate

  6. Implementation of electronic crosstalk correction for terra MODIS PV LWIR bands

    Science.gov (United States)

    Geng, Xu; Madhavan, Sriharsha; Chen, Na; Xiong, Xiaoxiong

    2015-09-01

    The MODerate-resolution Imaging Spectroradiometer (MODIS) is one of the primary instruments in the fleet of NASA's Earth Observing Systems (EOS) in space. Terra MODIS has completed 15 years of operation far exceeding its design lifetime of 6 years. The MODIS Level 1B (L1B) processing is the first in the process chain for deriving various higher level science products. These products are used mainly in understanding the geophysical changes occurring in the Earth's land, ocean, and atmosphere. The L1B code is designed to carefully calibrate the responses of all the detectors of the 36 spectral bands of MODIS and provide accurate L1B radiances (also reflectances in the case of Reflective Solar Bands). To fulfill this purpose, Look Up Tables (LUTs), that contain calibration coefficients derived from both on-board calibrators and Earth-view characterized responses, are used in the L1B processing. In this paper, we present the implementation mechanism of the electronic crosstalk correction in the Photo Voltaic (PV) Long Wave InfraRed (LWIR) bands (Bands 27-30). The crosstalk correction involves two vital components. First, a crosstalk correction modular is implemented in the L1B code to correct the on-board Blackbody and Earth-View (EV) digital number (dn) responses using a linear correction model. Second, the correction coefficients, derived from the EV observations, are supplied in the form of LUTs. Further, the LUTs contain time stamps reflecting to the change in the coefficients assessed using the Noise Equivalent difference Temperature (NEdT) trending. With the algorithms applied in the MODIS L1B processing it is demonstrated that these corrections indeed restore the radiometric balance for each of the affected bands and substantially reduce the striping noise in the processed images.

  7. Effect of structural distortion on the electronic band structure of NaOsO3 studied within density functional theory and a three-orbital model

    Science.gov (United States)

    Mohapatra, Shubhajyoti; Bhandari, Churna; Satpathy, Sashi; Singh, Avinash

    2018-04-01

    Effects of the structural distortion associated with the OsO6 octahedral rotation and tilting on the electronic band structure and magnetic anisotropy energy for the 5 d3 compound NaOsO3 are investigated using the density functional theory (DFT) and within a three-orbital model. Comparison of the essential features of the DFT band structures with the three-orbital model for both the undistorted and distorted structures provides insight into the orbital and directional asymmetry in the electron hopping terms resulting from the structural distortion. The orbital mixing terms obtained in the transformed hopping Hamiltonian resulting from the octahedral rotations are shown to account for the fine features in the DFT band structure. Staggered magnetization and the magnetic character of states near the Fermi energy indicate weak coupling behavior.

  8. Effect of superconductivity on the cubic to tetragonal structural transition due to a two-fold degenerate electronic band

    International Nuclear Information System (INIS)

    Ghatak, S.K.; Khanra, B.C.; Ray, D.K.

    1978-01-01

    The effect of the BCS superconductivity on the cubic to tetragonal structural transition arising from a two-fold degenerate electronic band is investigated within the mean field approximation. The phase diagram of the two transitions is given for a half filled esub(g)-band. Modification of the two transitions when they are close together is also discussed. (author)

  9. Excitation of lowest electronic states of thymine by slow electrons

    Science.gov (United States)

    Chernyshova, I. V.; Kontros, E. J.; Markush, P. P.; Shpenik, O. B.

    2013-11-01

    Excitation of lowest electronic states of the thymine molecules in the gas phase is studied by elec- tron energy loss spectroscopy. In addition to dipole-allowed transitions to singlet states, transitions to the lowest triplet states were observed. The low-energy features of the spectrum at 3.66 and 4.61 eV are identified with the excitation of the first triplet states 13 A' (π → π*) and 13 A″ ( n → π*). The higher-lying features at 4.96, 5.75, 6.17, and 7.35 eV are assigned mainly to the excitation of the π → π* transitions to the singlet states of the molecule. The excitation dynamics of the lowest states is studied. It is found that the first triplet state 13 A'(π → π*) is most efficiently excited at a residual energy close to zero, while the singlet 21 A'(π → π*) state is excited with almost identical efficiency at different residual energies.

  10. Damping effect of the inner band electrons on the optical absorption and bandwidth of metal nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Ochoo, Lawrence, E-mail: lawijapuonj@yahoo.com; Migwi, Charles; Okumu, John [Kenyatta University, Physics Department (Kenya)

    2012-12-15

    Conflicts and discrepancies around nanoparticle (NP) size effect on the optical properties of metal NPs of sizes below the mean free path of electron can be traced to the internal damping effect of the hybrid resonance of the inner band (IB) and the conduction band (CB) electrons of the noble metals. We present a scheme to show how alternative mathematical formulation of the physics of interaction between the CB and the IB electrons of NP sizes <50 nm justifies this and resolves the conflicts. While a number of controversies exist between classical and quantum theories over the phenomenological factors to attribute to the NP size effect on the absorption bandwidth, this article shows that the bandwidth behavior can be well predicted from a different treatment of the IB damping effect, without invoking any of the controversial phenomenological factors. It finds that the IB damping effect is mainly frequency dependent and only partly size dependent and shows how its influence on the surface plasmon resonance can be modeled to show the influence of NP size on the absorption properties. Through the model, it is revealed that strong coupling of IB and CB electrons drastically alters the absorption spectra, splitting it into distinctive dipole and quadrupole modes and even introduce a behavioral switch. It finds a strong overlap between the IB and the CB absorptions for Au and Cu but not Ag, which is sensitive to the NP environment. The CB modes shift with the changing refractive index of the medium in a way that can allow their independent excitation, free of influence of the IB electrons. Through a hybrid of parameters, the model further finds that metal NP sizes can be established not only by their spectral absorption peak locations but also from a proper correlation of the peak location and the bandwidth (FWHM).

  11. First principles electronic band structure and phonon dispersion curves for zinc blend beryllium chalcogenide

    Energy Technology Data Exchange (ETDEWEB)

    Dabhi, Shweta, E-mail: venu.mankad@gmail.com; Mankad, Venu, E-mail: venu.mankad@gmail.com; Jha, Prafulla K., E-mail: venu.mankad@gmail.com [Department of Physics, Maharaja Krishnakumasinhji Bhavnagar University, Bhavnagar-364001 (India)

    2014-04-24

    A detailed theoretical study of structural, electronic and Vibrational properties of BeX compound is presented by performing ab-initio calculations based on density-functional theory using the Espresso package. The calculated value of lattice constant and bulk modulus are compared with the available experimental and other theoretical data and agree reasonably well. BeX (X = S,Se,Te) compounds in the ZB phase are indirect wide band gap semiconductors with an ionic contribution. The phonon dispersion curves are represented which shows that these compounds are dynamically stable in ZB phase.

  12. Satellite bands of the RbCs molecule in the range of highly excited states

    Energy Technology Data Exchange (ETDEWEB)

    Rakić, Mario; Beuc, Robert; Skenderović, Hrvoje, E-mail: hrvoje@ifs.hr [Institute of Physics, Bijenička cesta 46, Zagreb 10000 (Croatia); Bouloufa-Maafa, Nadia; Dulieu, Olivier; Vexiau, Romain [Laboratoire Aimé Cotton, CNRS, Université Paris-Sud, ENS Cachan, Université Paris-Saclay, Bât. 505, Campus d’Orsay, Orsay Cedex 91405 (France); Pichler, Goran [Physics Department, Kuwait University, PO Box 5969, Safat—13060 (Kuwait)

    2016-05-28

    We report on the observation of three RbCs satellite bands in the blue and green ranges of the visible spectrum. Absorption measurements are performed using all-sapphire cell filled with a mixture of Rb and Cs. We compare high resolution absorption spectrum of Rb-Cs vapor mixture with pure Rb and Cs vapor spectra from the literature. After detailed analysis, the new satellite bands of RbCs molecule at 418.3 nm, 468.3, and 527.5 nm are identified. The origin of these bands is discussed by direct comparison with difference potentials derived from quantum chemistry calculations of RbCs potential energy curves. These bands originate from the lower Rydberg states of the RbCs molecule. This study thus provides further insight into photoassociation of lower Rydberg molecular states, approximately between Cs(7s) + Rb(5s) and Cs(6s) + Rb(6p) asymptotes, in ultracold gases.

  13. Ground state shape and crossing of near spherical and deformed bands in 182Hg

    International Nuclear Information System (INIS)

    Ma, W.C.; Ramayya, A.V.; Hamilton, J.H.; Robinson, S.J.; Barclay, M.E.; Zhao, K.; Cole, J.D.; Zganjar, E.F.; Spejewski, E.H.

    1983-01-01

    The energy levels of 182 Hg have been identified for the first time through comparison of in-beam studies of the reactions 156 154 Gd( 32 S,4n) 184 182 Hg. Levels up to 12 + in 182 Hg were established from γ-γ coincidence and singles measurement. The data establish that the ground state shape is near spherical, and that the ground band is crossed by a well deformed band at 4 + . In contrast to IBA model predictions that the deformed band will rise in energy in 182 Hg compared to 184 Hg, the energies of the deformed levels in 182 Hg continue to drop. 7 references

  14. Strongly driven electron spins using a Ku band stripline electron paramagnetic resonance resonator

    Science.gov (United States)

    Yap, Yung Szen; Yamamoto, Hiroshi; Tabuchi, Yutaka; Negoro, Makoto; Kagawa, Akinori; Kitagawa, Masahiro

    2013-07-01

    This article details our work to obtain strong excitation for electron paramagnetic resonance (EPR) experiments by improving the resonator's efficiency. The advantages and application of strong excitation are discussed. Two 17 GHz transmission-type, stripline resonators were designed, simulated and fabricated. Scattering parameter measurements were carried out and quality factor were measured to be around 160 and 85. Simulation results of the microwave's magnetic field distribution are also presented. To determine the excitation field at the sample, nutation experiments were carried out and power dependence were measured using two organic samples at room temperature. The highest recorded Rabi frequency was rated at 210 MHz with an input power of about 1 W, which corresponds to a π/2 pulse of about 1.2 ns.

  15. Electronic band-gap modified passive silicon optical modulator at telecommunications wavelengths.

    Science.gov (United States)

    Zhang, Rui; Yu, Haohai; Zhang, Huaijin; Liu, Xiangdong; Lu, Qingming; Wang, Jiyang

    2015-11-13

    The silicon optical modulator is considered to be the workhorse of a revolution in communications. In recent years, the capabilities of externally driven active silicon optical modulators have dramatically improved. Self-driven passive modulators, especially passive silicon modulators, possess advantages in compactness, integration, low-cost, etc. Constrained by a large indirect band-gap and sensitivity-related loss, the passive silicon optical modulator is scarce and has been not advancing, especially at telecommunications wavelengths. Here, a passive silicon optical modulator is fabricated by introducing an impurity band in the electronic band-gap, and its nonlinear optics and applications in the telecommunications-wavelength lasers are investigated. The saturable absorption properties at the wavelength of 1.55 μm was measured and indicates that the sample is quite sensitive to light intensity and has negligible absorption loss. With a passive silicon modulator, pulsed lasers were constructed at wavelengths at 1.34 and 1.42 μm. It is concluded that the sensitive self-driven passive silicon optical modulator is a viable candidate for photonics applications out to 2.5 μm.

  16. Excited state electron affinity calculations for aluminum

    Science.gov (United States)

    Hussein, Adnan Yousif

    2017-08-01

    Excited states of negative aluminum ion are reviewed, and calculations of electron affinities of the states (3s^23p^2)^1D and (3s3p^3){^5}{S}° relative to the (3s^23p)^2P° and (3s3p^2)^4P respectively of the neutral aluminum atom are reported in the framework of nonrelativistic configuration interaction (CI) method. A priori selected CI (SCI) with truncation energy error (Bunge in J Chem Phys 125:014107, 2006) and CI by parts (Bunge and Carbó-Dorca in J Chem Phys 125:014108, 2006) are used to approximate the valence nonrelativistic energy. Systematic studies of convergence of electron affinity with respect to the CI excitation level are reported. The calculated value of the electron affinity for ^1D state is 78.675(3) meV. Detailed Calculations on the ^5S°c state reveals that is 1216.8166(3) meV below the ^4P state.

  17. Engineering electronic states of periodic and quasiperiodic chains by buckling

    Science.gov (United States)

    Mukherjee, Amrita; Nandy, Atanu; Chakrabarti, Arunava

    2017-07-01

    The spectrum of spinless, non-interacting electrons on a linear chain that is buckled in a non-uniform, quasiperiodic manner is investigated within a tight binding formalism. We have addressed two specific cases, viz., a perfectly periodic chain wrinkled in a quasiperiodic Fibonacci pattern, and a quasiperiodic Fibonacci chain, where the buckling also takes place in a Fibonacci pattern. The buckling brings distant neighbors in the parent chain to close proximity, which is simulated by a tunnel hopping amplitude. It is seen that, in the perfectly ordered case, increasing the strength of the tunnel hopping (that is, bending the segments more) absolutely continuous density of states is retained towards the edges of the band, while the central portion becomes fragmented and host subbands of narrowing widths containing extended, current carrying states, and multiple isolated bound states formed as a result of the bending. A switching ;on; and ;off; of the electronic transmission can thus be engineered by buckling. On the other hand, in the second example of a quasiperiodic Fibonacci chain, imparting a quasiperiodic buckling is found to generate continuous subband(s) destroying the usual multifractality of the energy spectrum. We present exact results based on a real space renormalization group analysis, that is corroborated by explicit calculation of the two terminal electronic transport.

  18. Giant amplification in degenerate band edge slow-wave structures interacting with an electron beam

    Energy Technology Data Exchange (ETDEWEB)

    Othman, Mohamed A. K.; Veysi, Mehdi; Capolino, Filippo [Department of Electrical Engineering and Computer Science, University of California, Irvine, California 92697 (United States); Figotin, Alexander [Department of Mathematics, University of California, Irvine, California 92697 (United States)

    2016-03-15

    We propose a new amplification regime based on a synchronous operation of four degenerate electromagnetic (EM) modes in a slow-wave structure and the electron beam, referred to as super synchronization. These four EM modes arise in a Fabry-Pérot cavity when degenerate band edge (DBE) condition is satisfied. The modes interact constructively with the electron beam resulting in superior amplification. In particular, much larger gains are achieved for smaller beam currents compared to conventional structures based on synchronization with only a single EM mode. We demonstrate giant gain scaling with respect to the length of the slow-wave structure compared to conventional Pierce type single mode traveling wave tube amplifiers. We construct a coupled transmission line model for a loaded waveguide slow-wave structure exhibiting a DBE, and investigate the phenomenon of giant gain via super synchronization using the Pierce model generalized to multimode interaction.

  19. S-band linac-based X-ray source with {pi}/2-mode electron linac

    Energy Technology Data Exchange (ETDEWEB)

    Deshpande, Abhay, E-mail: abhay@post.kek.jp [Department of Accelerator Science, School of High Energy Accelerator Science, Graduate University for Advanced Studies, Shonan International Village, Hayama, Miura, Kanagawa 240-0193 (Japan); Society for Applied Microwave Electronic Engineering and Research (SAMEER), R and D Laboratory of the Government of India, IIT Campus, Powai, Mumbai 400 076 (India); Araki, Sakae [High Energy Accelerator Research Organization, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan); Dixit, Tanuja [Society for Applied Microwave Electronic Engineering and Research (SAMEER), R and D Laboratory of the Government of India, IIT Campus, Powai, Mumbai 400 076 (India); Fukuda, Masafumi [High Energy Accelerator Research Organization, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan); Krishnan, R; Pethe, Sanjay [Society for Applied Microwave Electronic Engineering and Research (SAMEER), R and D Laboratory of the Government of India, IIT Campus, Powai, Mumbai 400 076 (India); Sakaue, Kazuyuki [Waseda University, Shinjuku-ku, Tokyo 169-8555 (Japan); Terunuma, Nobuhiro; Urakawa, Junji [High Energy Accelerator Research Organization, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan); Washio, Masakazu [Waseda University, Shinjuku-ku, Tokyo 169-8555 (Japan)

    2011-05-01

    The activities with the compact X-ray source are attracting more attention, particularly for the applications of the source in medical fields. We propose the fabrication of a compact X-ray source using the SAMEER electron linear accelerator and the KEK laser undulator X-ray source (LUCX) technologies. The linac developed at SAMEER is a standing wave side-coupled S-band linac operating in the {pi}/2 mode. In the proposed system, a photocathode RF gun will inject bunches of electrons in the linac to accelerate and achieve a high-energy, low-emittance beam. This beam will then interact with the laser in the laser cavity to produce X-rays of a type well suited for various applications. The side-coupled structure will make the system more compact, and the {pi}/2 mode of operation will enable a high repetition rate operation, which will help to increase the X-ray yield.

  20. Valence band structure and density of states effective mass model of biaxial tensile strained silicon based on k · p theory

    International Nuclear Information System (INIS)

    Kuang Qian-Wei; Liu Hong-Xia; Wang Shu-Long; Qin Shan-Shan; Wang Zhi-Lin

    2011-01-01

    After constructing a stress and strain model, the valence bands of in-plane biaxial tensile strained Si is calculated by k · p method. In the paper we calculate the accurate anisotropy valance bands and the splitting energy between light and heavy hole bands. The results show that the valance bands are highly distorted, and the anisotropy is more obvious. To obtain the density of states (DOS) effective mass, which is a very important parameter for device modeling, a DOS effective mass model of biaxial tensile strained Si is constructed based on the valance band calculation. This model can be directly used in the device model of metal—oxide semiconductor field effect transistor (MOSFET). It also a provides valuable reference for biaxial tensile strained silicon MOSFET design. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  1. Electronic Energy Levels and Band Alignment for Aqueous Phenol and Phenolate from First Principles.

    Science.gov (United States)

    Opalka, Daniel; Pham, Tuan Anh; Sprik, Michiel; Galli, Giulia

    2015-07-30

    Electronic energy levels in phenol and phenolate solutions have been computed using density functional theory and many-body perturbation theory. The valence and conduction bands of the solvent and the ionization energies of the solutes have been aligned with respect to the vacuum level based on the concept of a computational standard hydrogen electrode. We have found significant quantitative differences between the generalized-gradient approximation, calculations with the HSE hybrid functional, and many-body perturbation theory in the G0W0 approximation. For phenol, two ionization energies below the photoionization threshold of bulk water have been assigned in the spectrum of Kohn-Sham eigenvalues of the solution. Deprotonation to phenolate was found to lift a third occupied energy level above the valence band maximum of the solvent which is characterized by an electronic lone pair at the hydroxyl group. The second and third ionization energies of phenolate were found to be very similar and explain the intensity pattern observed in recent experiments using liquid-microjet photoemission spectroscopy.

  2. Overlap of electron core states for very high compressions

    International Nuclear Information System (INIS)

    Straub, G.

    1985-01-01

    At normal density and for modest compressions, the electronic structure of a metal can be accurately described by treating the conduction electrons and their interactions with the usual methods of band theory. The core electrons remain essentially the same as for an isolated free atom and do not participate in the bonding forces responsible for creating a condensed phase. As the density increases, the core electrons begin to ''see'' one another as the overlap of the tails of wave functions can no longer be neglected. The electronic structure of the core electrons is responsible for an effective repulsive interaction that eventually becomes free-electron-like at very high compressions. The electronic structure of the interacting core electrons may be treated in a simple manner using the Atomic Surface Method (ASM). The ASM is a first-principles treatment of the electronic structure involving a rigorous integration of the Schroedinger equation within the atomic-sphere approximation. Solid phase wave functions are constructed from isolated atom wave functions and the band width W/sub l/ and the center of gravity of the band C/sub l/ are obtained from simple formulas. The ASM can also utilize analytic forms of the atomic wave functions and thus provide direct functional dependence of various aspects of the electronic structure. Of particular use in understanding the behavior of the core electrons, the ASM provides the analytic density dependence of the band widths and positions. 8 refs., 2 figs., 1 tab

  3. Ground-state and pairing-vibrational bands with equal quadrupole collectivity in 124Xe

    Science.gov (United States)

    Radich, A. J.; Garrett, P. E.; Allmond, J. M.; Andreoiu, C.; Ball, G. C.; Bianco, L.; Bildstein, V.; Chagnon-Lessard, S.; Cross, D. S.; Demand, G. A.; Diaz Varela, A.; Dunlop, R.; Finlay, P.; Garnsworthy, A. B.; Hackman, G.; Hadinia, B.; Jigmeddorj, B.; Laffoley, A. T.; Leach, K. G.; Michetti-Wilson, J.; Orce, J. N.; Rajabali, M. M.; Rand, E. T.; Starosta, K.; Sumithrarachchi, C. S.; Svensson, C. E.; Triambak, S.; Wang, Z. M.; Wood, J. L.; Wong, J.; Williams, S. J.; Yates, S. W.

    2015-04-01

    The nuclear structure of 124Xe has been investigated via measurements of the β+/EC decay of 124Cs with the 8 π γ -ray spectrometer at the TRIUMF-ISAC facility. The data collected have enabled branching ratio measurements of weak, low-energy transitions from highly excited states, and the 2+→0+ in-band transitions have been observed. Combining these results with those from a previous Coulomb excitation study, B (E 2 ;23+→02+) =78 (13 ) W.u. and B (E 2 ;24+→03+) =53 (12 ) W.u. were determined. The 03+ state, in particular, is interpreted as the main fragment of the proton-pairing vibrational band identified in a previous 122Te (3He,n )124Xe measurement, and has quadrupole collectivity equal to, within uncertainty, that of the ground-state band.

  4. Electronic excited states and relaxation dynamics in polymer heterojunction systems

    Science.gov (United States)

    Ramon, John Glenn Santos

    The potential for using conducting polymers as the active material in optoelectronic devices has come to fruition in the past few years. Understanding the fundamental photophysics behind their operations points to the significant role played by the polymer interface in their performance. Current device architectures involve the use of bulk heterojunctions which intimately blend the donor and acceptor polymers to significantly increase not only their interfacial surface area but also the probability of exciton formation within the vicinity of the interface. In this dissertation, we detail the role played by the interface on the behavior and performance of bulk heterojunction systems. First, we explore the relation between the exciton binding energy to the band offset in determining device characteristics. As a general rule, when the exciton binding energy is greater than the band offset, the exciton remains the lowest energy excited state leading to efficient light-emitting properties. On the other hand, if the offset is greater than the binding energy, charge separation becomes favorable leading to better photovoltaic behavior. Here, we use a Wannier function, configuration interaction based approach to examine the essential excited states and predict the vibronic absorption and emission spectra of the PPV/BBL, TFB/F8BT and PFB/F8BT heterojunctions. Our results underscore the role of vibrational relaxation in the formation of charge-transfer states following photoexcitation. In addition, we look at the relaxation dynamics that occur upon photoexcitation. For this, we adopt the Marcus-Hush semiclassical method to account for lattice reorganization in the calculation of the interconversion rates in TFB/F8BT and PFB/F8BT. We find that, while a tightly bound charge-transfer state (exciplex) remains the lowest excited state, a regeneration pathway to the optically active lowest excitonic state in TFB/F8BT is possible via thermal repopulation from the exciplex. Finally

  5. Calculation of electrostatic multipoles of electron localized in narrow-band InSb spherical nanolayer

    International Nuclear Information System (INIS)

    Amirkhanyan, S.M.; Kazaryan, E.M.; Sarkisyan, H.A.

    2015-01-01

    Behavior of electron in narrow-gap spherical nanolayer of InSb is considered. Dispersion law of electron is described within the double-gap Kane model, when arises a necessity for considering of Klein-Gordon equation for description of behavior of electrons and light holes. Dipole and quadrupole momentums of electron in specified systems are defined on the base of the obtained expressions. It is shown, that average value of dipole momentum equals to zero and that for definition of average value of tensor of quadrupole momentum it is enough to calculate the average value of diagonal z-component of this tensor. Electrostatic potentials and tensions of fields created by electron located in different quantum states are defined

  6. The collective bands of positive parity states in odd-A (fp) shell nuclei

    International Nuclear Information System (INIS)

    Ahalpara, D.P.

    1979-01-01

    The low-lying collective bands of positive parity states in (fp) shell nuclei are described in the deformed Hartree-Fock method by projecting states of definite angular momenta from 'the lowest energy intrinsic states in (sd)sup(-1)(fp)sup(n+1) configurations. The modified Kuo-Brown effective interaction for (fp) shell and modified surface delta interaction (MSDI) for a hole in (sd) shell with a particle in (fp) shell have been used. The collective bands of states are in general well reproduced by the effective interactions. The excitation energies of the band head states are however off by about one MeV. The calculated magnetic moments of the band head j = 3/2 + states are in reasonable agreement with experiment. Using effective charges esub(p) = 1.33 e and esub(n) = 0.64 e fairly good agreement is obtained for E(2) transitions. The hindered M(1) transition strengths are reproduced to the correct order, however they are slightly higher compared to the experiment. (author)

  7. Band offsets and electronic structures of interface between In{sub 0.5}Ga{sub 0.5}As and InP

    Energy Technology Data Exchange (ETDEWEB)

    Cai, Genwang [School of Physical Science and Engineering and Key Laboratory of Materials Physics of Ministry of Education of China, Zhengzhou University, Zhengzhou 450052 (China); College of Science, Henan University of Technology, Zhengzhou 450001 (China); Wang, Changhong; Wang, Weichao [College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071 (China); Liang, Erjun, E-mail: ejliang@zzu.edu.cn [School of Physical Science and Engineering and Key Laboratory of Materials Physics of Ministry of Education of China, Zhengzhou University, Zhengzhou 450052 (China)

    2016-02-07

    III–V semiconductor interfacing with high-κ gate oxide is crucial for the high mobility metal-oxide-semiconductor field transistor device. With density functional theory calculations, we explored the band offsets and electronic structures of the In{sub 0.5}Ga{sub 0.5}As/InP interfaces with various interfacial bondings. Among six different bonding interfaces, we found that P-In(Ga) bonding interface showed the highest stability. Local density of states calculations was adopted to calculate the band offsets. Except for the metallic interface, we noticed that neither valence band offset nor conduction band offset depended on the interfacial bondings. For the most stable P-In(Ga) interface, we did not observe any gap states. Furthermore, we explored the P-In(Ga) interfaces with interfacial P-As exchange defects, which slightly modified the interface stability and the band offsets but did not produce any gap states. These findings provide solid evidence that InP could serve as a promising interfacial passivation layer between III–V material and high-κ oxide in the application of high mobility devices.

  8. 8-band and 14-band kp modeling of electronic band structure and material gain in Ga(In)AsBi quantum wells grown on GaAs and InP substrates

    Energy Technology Data Exchange (ETDEWEB)

    Gladysiewicz, M.; Wartak, M. S. [Faculty of Fundamental Problems of Technology, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland); Department of Physics and Computer Science, Wilfrid Laurier University, Waterloo, Ontario N2L 3C5 (Canada); Kudrawiec, R. [Faculty of Fundamental Problems of Technology, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland)

    2015-08-07

    The electronic band structure and material gain have been calculated for GaAsBi/GaAs quantum wells (QWs) with various bismuth concentrations (Bi ≤ 15%) within the 8-band and 14-band kp models. The 14-band kp model was obtained by extending the standard 8-band kp Hamiltonian by the valence band anticrossing (VBAC) Hamiltonian, which is widely used to describe Bi-related changes in the electronic band structure of dilute bismides. It has been shown that in the range of low carrier concentrations n < 5 × 10{sup 18 }cm{sup −3}, material gain spectra calculated within 8- and 14-band kp Hamiltonians are similar. It means that the 8-band kp model can be used to calculate material gain in dilute bismides QWs. Therefore, it can be applied to analyze QWs containing new dilute bismides for which the VBAC parameters are unknown. Thus, the energy gap and electron effective mass for Bi-containing materials are used instead of VBAC parameters. The electronic band structure and material gain have been calculated for 8 nm wide GaInAsBi QWs on GaAs and InP substrates with various compositions. In these QWs, Bi concentration was varied from 0% to 5% and indium concentration was tuned in order to keep the same compressive strain (ε = 2%) in QW region. For GaInAsBi/GaAs QW with 5% Bi, gain peak was determined to be at about 1.5 μm. It means that it can be possible to achieve emission at telecommunication windows (i.e., 1.3 μm and 1.55 μm) for GaAs-based lasers containing GaInAsBi/GaAs QWs. For GaInAsBi/Ga{sub 0.47}In{sub 0.53}As/InP QWs with 5% Bi, gain peak is predicted to be at about 4.0 μm, i.e., at the wavelengths that are not available in current InP-based lasers.

  9. Influence of energy band alignment in mixed crystalline TiO2 nanotube arrays: good for photocatalysis, bad for electron transfer

    Science.gov (United States)

    Mohammadpour, Raheleh

    2017-12-01

    Despite the wide application ranges of TiO2, the precise explanation of the charge transport dynamic through a mixed crystal phase of this semiconductor has remained elusive. Here, in this research, mixed-phase TiO2 nanotube arrays (TNTAs) consisting of anatase and 0-15% rutile phases has been formed through various annealing processes and employed as a photoelectrode of a photovoltaic cell. Wide ranges of optoelectronic experiments have been employed to explore the band alignment position, as well as the depth and density of trap states in TNTAs. Short circuit potential, as well as open circuit potential measurements specified that the band alignment of more than 0.2 eV exists between the anatase and rutile phase Fermi levels, with a higher electron affinity for anatase; this can result in a potential barrier in crystallite interfaces and the deterioration of electron mobility through mixed phase structures. Moreover, a higher density of shallow localized trap states below the conduction band with more depth (133 meV in anatase to 247 meV in 15% rutile phase) and also deep oxygen vacancy traps have been explored upon introducing the rutile phase. Based on our results, employing TiO2 nanotubes as just the electron transport medium in mixed crystalline phases can deteriorate the charge transport mechanism, however, in photocatalytic applications when both electrons and holes are present, a robust charge separation in crystalline anatase/rutile interphases will result in better performances.

  10. Auger electron emission initiated by the creation of valence-band holes in graphene by positron annihilation.

    Science.gov (United States)

    Chirayath, V A; Callewaert, V; Fairchild, A J; Chrysler, M D; Gladen, R W; Mcdonald, A D; Imam, S K; Shastry, K; Koymen, A R; Saniz, R; Barbiellini, B; Rajeshwar, K; Partoens, B; Weiss, A H

    2017-07-13

    Auger processes involving the filling of holes in the valence band are thought to make important contributions to the low-energy photoelectron and secondary electron spectrum from many solids. However, measurements of the energy spectrum and the efficiency with which electrons are emitted in this process remain elusive due to a large unrelated background resulting from primary beam-induced secondary electrons. Here, we report the direct measurement of the energy spectra of electrons emitted from single layer graphene as a result of the decay of deep holes in the valence band. These measurements were made possible by eliminating competing backgrounds by employing low-energy positrons (holes by annihilation. Our experimental results, supported by theoretical calculations, indicate that between 80 and 100% of the deep valence-band holes in graphene are filled via an Auger transition.

  11. The electronic density of states of disordered compounds

    International Nuclear Information System (INIS)

    Geertsma, W.; Dijkstra, J.

    1984-11-01

    Recently, the electronic properties of liquid alkali (Li, Na, K, Rb, Cs)-group IV (Si, Ge, Sn, Pb) alloys have been discussed by the present authors using a tight-binding model. Only anion orbitals (= group IV) are taken into account. Disorder is described by a pseudo lattice, which takes into account local coordination in one of the sublattices (cation or anion) only. In the first part of this paper it is shown that this approximation is consistent with the usual valence rules used by structural chemists for crystalline structures. In the second part of the paper the solutions for the density of states of the tight-binding Hamiltonian are studied for a number of pseudolattices. The infinite set of Green function equations is solved by using the effective transfer method, which replaces the famous Block condition. It is shown that such a model can explain the formation of bandgaps in disordered systems. By choosing the proper smallest cluster(s) of transfer loops to model the real structure by a pseudolattice, a density of states is obtained which represents properly that of the corresponding crystalline structure. Structures reminiscent to those caused by van Hove singularities already appear in the electronic density of states when relatively small cluster(s) of transfer loops are used. The approach outlined in this paper is capable of describing the electronic density of states due to various degrees of local order in a sublattice. Some of the peculiarities occurring in the solution of the density of states of certain pseudolattices, such as poles outside the band, are discussed in an appendix. (author)

  12. A Ku band pulsed electron paramagnetic resonance spectrometer using an arbitrary waveform generator for quantum control experiments at millikelvin temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Yap, Yung Szen, E-mail: yungszen@utm.my [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka-shi, Osaka 560-8531 (Japan); Faculty of Science, Universiti Teknologi Malaysia, 81310 UTM Johor Bahru, Johor (Malaysia); Tabuchi, Yutaka [Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, Meguro-ku, Tokyo 153-8904 (Japan); Negoro, Makoto; Kagawa, Akinori; Kitagawa, Masahiro, E-mail: kitagawa@ee.es.osaka-u.ac.jp [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka-shi, Osaka 560-8531 (Japan)

    2015-06-15

    We present a 17 GHz (Ku band) arbitrary waveform pulsed electron paramagnetic resonance spectrometer for experiments down to millikelvin temperatures. The spectrometer is located at room temperature, while the resonator is placed either in a room temperature magnet or inside a cryogen-free dilution refrigerator; the operating temperature range of the dilution unit is from ca. 10 mK to 8 K. This combination provides the opportunity to perform quantum control experiments on electron spins in the pure-state regime. At 0.6 T, spin echo experiments were carried out using γ-irradiated quartz glass from 1 K to 12.3 mK. With decreasing temperatures, we observed an increase in spin echo signal intensities due to increasing spin polarizations, in accordance with theoretical predictions. Through experimental data fitting, thermal spin polarization at 100 mK was estimated to be at least 99%, which was almost pure state. Next, to demonstrate the ability to create arbitrary waveform pulses, we generate a shaped pulse by superposing three Gaussian pulses of different frequencies. The resulting pulse was able to selectively and coherently excite three different spin packets simultaneously—a useful ability for analyzing multi-spin system and for controlling a multi-qubit quantum computer. By applying this pulse to the inhomogeneously broadened sample, we obtain three well-resolved excitations at 8 K, 1 K, and 14 mK.

  13. Towards double-functionalized small diamondoids: selective electronic band-gap tuning

    International Nuclear Information System (INIS)

    Adhikari, Bibek; Fyta, Maria

    2015-01-01

    Diamondoids are nanoscale diamond-like cage structures with hydrogen terminations, which can occur in various sizes and with a diverse type of modifications. In this work, we focus on the structural alterations and the effect of doping and functionalization on the electronic properties of diamondoids, from the smallest adamantane to heptamantane. The results are based on quantum mechanical calculations. We perform a self-consistent study, starting with doping the smallest diamondoid, adamantane. Boron, nitrogen, silicon, oxygen, and phosphorus are chosen as dopants at sites which have been previously optimized and are also consistent with the literature. At a next step, an amine- and a thiol- group are separately used to functionalize the adamantane molecule. We mainly focus on a double functionalization of diamondoids up to heptamantane using both these atomic groups. The effect of isomeration in the case of tetramantane is also studied. We discuss the higher efficiency of a double-functionalization compared to doping or a single-functionalization of diamondoids in tuning the electronic properties, such as the electronic band-gap, of modified small diamondoids in view of their novel nanotechnological applications. (paper)

  14. New high spin states and band termination in 83Y and 84Zr

    International Nuclear Information System (INIS)

    Johnson, T.D.; Aprahamian, A.; Lister, C.J.; Blumenthal, D.J.; Crowell, B.; Chowdhury, P.; Fallon, P.; Machiavelli, A.O.

    1997-01-01

    The gamma decay of high spin yrast states in 83 Y up to I π =59/2 + and 53/2 - have been observed using the reaction 58 Ni( 29 Si,3p) at 110 MeV and the Gammasphere Early Implementation Array. The level scheme has been substantially extended due to the observations of several new transitions in all of the bands. A sequence of transitions feeding into the positive parity yrast band above I π =47/2 + seems to be consistent with a noncollective oblate structure expected at these high spins. A similar cascade is found in the data for 84 Zr. A new forking of the favored negative parity band is found which may be due to neutron alignment polarizing the core to a different shape. This suggests that the open-quotes isomeric close-quote close-quote band in 83 Y, for which one more connecting transition was found, is of a similar nature to other high-K bands found in this region. Lifetime measurements in the unfavored negative parity band are consistent with cranking calculations which predict a nearly oblate shape with a deformation parameter β 2 ∼0.2. A qualitative analysis of line shapes at very high spins suggests the persistence of collectivity in the yrast sequence to the highest excitations seen. copyright 1997 The American Physical Society

  15. New high spin states and band termination in {sup 83}Y and {sup 84}Zr

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, T.D.; Aprahamian, A. [University of Notre Dame, Notre Dame, Indiana 46556 (United States); Lister, C.J.; Blumenthal, D.J.; Crowell, B. [Argonne National Laboratory, Argonne, Illinois 60439 (United States); Chowdhury, P. [University of Massachusetts, Lowell, Massachusetts 01854 (United States); Fallon, P.; Machiavelli, A.O. [Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

    1997-03-01

    The gamma decay of high spin yrast states in {sup 83}Y up to I{sup {pi}}=59/2{sup +} and 53/2{sup {minus}} have been observed using the reaction {sup 58}Ni({sup 29}Si,3p) at 110 MeV and the Gammasphere Early Implementation Array. The level scheme has been substantially extended due to the observations of several new transitions in all of the bands. A sequence of transitions feeding into the positive parity yrast band above I{sup {pi}}=47/2{sup +} seems to be consistent with a noncollective oblate structure expected at these high spins. A similar cascade is found in the data for {sup 84}Zr. A new forking of the favored negative parity band is found which may be due to neutron alignment polarizing the core to a different shape. This suggests that the {open_quotes}isomeric{close_quote}{close_quote} band in {sup 83}Y, for which one more connecting transition was found, is of a similar nature to other high-K bands found in this region. Lifetime measurements in the unfavored negative parity band are consistent with cranking calculations which predict a nearly oblate shape with a deformation parameter {beta}{sub 2}{approx}0.2. A qualitative analysis of line shapes at very high spins suggests the persistence of collectivity in the yrast sequence to the highest excitations seen. {copyright} {ital 1997} {ital The American Physical Society}

  16. Effect of pressure on the structural properties and electronic band structure of GaSe

    Energy Technology Data Exchange (ETDEWEB)

    Schwarz, U.; Olguin, D.; Syassen, K. [Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, 70569 Stuttgart (Germany); Cantarero, A. [Department of Materials Sciences, University of Valencia, 46000 Burjasot (Spain); Hanfland, M. [European Synchrotron Radiation Facility, BP 220, 38043 Grenoble (France)

    2007-01-15

    The structural properties of GaSe have been investigated up to 38 GPa by monochromatic X-ray diffraction. The onset of the phase transition from the {epsilon}-GaSe to a disordered NaCl-type structural motif is observed near 21 GPa. Using the experimentally determined lattice parameters of the layered {epsilon}-phase as input, constrained ab-initio total energy calculations were performed in order to optimize the internal structural parameters at different pressures. The results obtained for the nearest-neighbor Ga-Se distance agree with those derived from recent EXAFS measurements. In addition, information is obtained on the changes of Ga-Ga and Se-Se bond lengths which were not accessible to a direct experimental determination yet. Based on the optimized structural parameters, we report calculations of band gap changes of {epsilon}-GaSe under pressure. The optical response and electronic band structure of the metallic high-pressure phase of GaSe are discussed briefly. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. First-principle study of the electronic band structure and the effective mass of the ternary alloy GaxIn1-xP

    Science.gov (United States)

    Yang, H. Q.; Song, T. L.; Liang, X. X.; Zhao, G. J.

    2015-01-01

    In this work, the electronic band structure and the effective mass of the ternary alloy GaxIn1-xP are studied by the first principle calculations. The software QUANTUM ESPRESSO and the generalized gradient approximation (GGA) for the exchange correlations have been used in the calculations. We calculate the lattice parameter, band gap and effective mass of the ternary alloy GaxIn1-xP for the Ga composition x varying from 0.0 to 1.0 by the step of 0.125. The effect of the Ga composition on the lattice parameter and the electronic density of states are discussed. The results show that the lattice parameter varies with the composition almost linearly following the Vegard's law. A direct-to-indirect band-gap crossover is found to occur close to x = 0.7. The effective masses are also calculated at Γ(000) high symmetry point along the [100] direction. The results show that the band gap and the electron effective mass vary nonlinearly with composition x.

  18. Temperature dependence of Q-band electron paramagnetic resonance spectra of nitrosyl heme proteins

    Energy Technology Data Exchange (ETDEWEB)

    Flores, Marco; Wajnberg, Eliane; Bemski, George

    1997-11-01

    The Q-band (35 GHz) electron paramagnetic resonance (EPR) spectra of nitrosyl hemoglobin (Hb N O) and nitrosyl myoglobin (Mb NO) were studied as a function of temperature between 19 K and 200 K. The spectra of both heme proteins show classes of variations as a function of temperature. The first one has previously been associated with the existence of two paramagnetic species, one with rhombic and the other with axial symmetry. The second one manifests itself in changes in the g-factors and linewidths of each species. These changes are correlated with the conformational substates model and associate the variations of g-values with changes in the angle of the N(his)-Fe-N (NO) bond in the rhombic species and with changes in the distance between Fe and N of the proximal (F8) histidine in the axial species. (author) 24 refs., 6 figs.

  19. Fermi integral and density-of-states functions in a parabolic band ...

    Indian Academy of Sciences (India)

    B K Chaudhuri

    2018-01-03

    Jan 3, 2018 ... distribution of the potential energy of the impurity states, showing a band tail in them e.g., ... oscillatory function of η (reduced Fermi energy = Ef/kBT, kB is the Boltzmann ...... grals, in: Network for computational nanotechnology.

  20. Electronic properties and bonding in Zr Hx thin films investigated by valence-band x-ray photoelectron spectroscopy

    Science.gov (United States)

    Magnuson, Martin; Schmidt, Susann; Hultman, Lars; Högberg, Hans

    2017-11-01

    The electronic structure and chemical bonding in reactively magnetron sputtered Zr Hx (x =0.15 , 0.30, 1.16) thin films with oxygen content as low as 0.2 at.% are investigated by 4d valence band, shallow 4p core-level, and 3d core-level x-ray photoelectron spectroscopy. With increasing hydrogen content, we observe significant reduction of the 4d valence states close to the Fermi level as a result of redistribution of intensity toward the H 1s-Zr 4d hybridization region at ˜6 eV below the Fermi level. For low hydrogen content (x =0.15 , 0.30), the films consist of a superposition of hexagonal closest-packed metal (α phase) and understoichiometric δ -Zr Hx (Ca F2 -type structure) phases, while for x =1.16 , the films form single-phase Zr Hx that largely resembles that of stoichiometric δ -Zr H2 phase. We show that the cubic δ -Zr Hx phase is metastable as thin film up to x =1.16 , while for higher H contents the structure is predicted to be tetragonally distorted. For the investigated Zr H1.16 film, we find chemical shifts of 0.68 and 0.51 eV toward higher binding energies for the Zr 4 p3 /2 and 3 d5 /2 peak positions, respectively. Compared to the Zr metal binding energies of 27.26 and 178.87 eV, this signifies a charge transfer from Zr to H atoms. The change in the electronic structure, spectral line shapes, and chemical shifts as a function of hydrogen content is discussed in relation to the charge transfer from Zr to H that affects the conductivity by charge redistribution in the valence band.

  1. Mechanisms of fine extinction band development in vein quartz: new insights from correlative light and electron microscopy

    Science.gov (United States)

    Derez, Tine; Van Der Donck, Tom; Plümper, Oliver; Muchez, Philippe; Pennock, Gill; Drury, Martyn R.; Sintubin, Manuel

    2017-07-01

    Fine extinction bands (FEBs) (also known as deformation lamellae) visible with polarized light microscopy in quartz consist of a range of nanostructures, inferring different formation processes. Previous transmission electron microscopy studies have shown that most FEB nanostructures in naturally deformed quartz are elongated subgrains formed by recovery of dislocation slip bands. Here we show that three types of FEB nanostructure occur in naturally deformed vein quartz from the low-grade metamorphic High-Ardenne slate belt (Belgium). Prismatic oriented FEBs are defined by bands of dislocation walls. Dauphiné twin boundaries present along the FEB boundaries probably formed after FEB formation. In an example of two sub-rhombohedral oriented FEBs, developed as two sets in one grain, the finer FEB set consists of elongated subgrains, similar to FEBs described in previous transmission electron microscopy studies. The second wider FEB set consists of bands with different dislocation density and fluid-inclusion content. The wider FEB set is interpreted as bands with different plastic strain associated with the primary growth banding of the vein quartz grain. The nanometre-scale fluid inclusions are interpreted to have formed from structurally bounded hydroxyl groups that moreover facilitated formation of the elongate subgrains. Larger fluid inclusions aligned along FEBs are explained by fluid-inclusion redistribution along dislocation cores. The prismatic FEB nanostructure and the relation between FEBs and growth bands have not been recognized before, although related structures have been reported in experimentally deformed quartz.

  2. Electronic processes in organic electronics bridging nanostructure, electronic states and device properties

    CERN Document Server

    Kudo, Kazuhiro; Nakayama, Takashi; Ueno, Nobuo

    2015-01-01

    The book covers a variety of studies of organic semiconductors, from fundamental electronic states to device applications, including theoretical studies. Furthermore, innovative experimental techniques, e.g., ultrahigh sensitivity photoelectron spectroscopy, photoelectron yield spectroscopy, spin-resolved scanning tunneling microscopy (STM), and a material processing method with optical-vortex and polarization-vortex lasers, are introduced. As this book is intended to serve as a textbook for a graduate level course or as reference material for researchers in organic electronics and nanoscience from electronic states, fundamental science that is necessary to understand the research is described. It does not duplicate the books already written on organic electronics, but focuses mainly on electronic properties that arise from the nature of organic semiconductors (molecular solids). The new experimental methods introduced in this book are applicable to various materials (e.g., metals, inorganic and organic mater...

  3. Resting-state theta-band connectivity and verbal memory in schizophrenia and in the high-risk state.

    Science.gov (United States)

    Andreou, Christina; Leicht, Gregor; Nolte, Guido; Polomac, Nenad; Moritz, Steffen; Karow, Anne; Hanganu-Opatz, Ileana L; Engel, Andreas K; Mulert, Christoph

    2015-02-01

    Disturbed functional connectivity is assumed to underlie neurocognitive deficits in patients with schizophrenia. As neurocognitive deficits are already present in the high-risk state, identification of the neural networks involved in this core feature of schizophrenia is essential to our understanding of the disorder. Resting-state studies enable such investigations, while at the same time avoiding the known confounder of impaired task performance in patients. The aim of the present study was to investigate EEG resting-state connectivity in high-risk individuals (HR) compared to first episode patients with schizophrenia (SZ) and to healthy controls (HC), and its association with cognitive deficits. 64-channel resting-state EEG recordings (eyes closed) were obtained for 28 HR, 19 stable SZ, and 23 HC, matched for age, education, and parental education. The imaginary coherence-based multivariate interaction measure (MIM) was used as a measure of connectivity across 80 cortical regions and six frequency bands. Mean connectivity at each region was compared across groups using the non-parametric randomization approach. Additionally, the network-based statistic was applied to identify affected networks in patients. SZ displayed increased theta-band resting-state MIM connectivity across midline, sensorimotor, orbitofrontal regions and the left temporoparietal junction. HR displayed intermediate theta-band connectivity patterns that did not differ from either SZ or HC. Mean theta-band connectivity within the above network partially mediated verbal memory deficits in SZ and HR. Aberrant theta-band connectivity may represent a trait characteristic of schizophrenia associated with neurocognitive deficits. As such, it might constitute a promising target for novel treatment applications. Copyright © 2014 Elsevier B.V. All rights reserved.

  4. X-band rf driven free electron laser driver with optics linearization

    Directory of Open Access Journals (Sweden)

    Yipeng Sun (孙一鹏

    2014-11-01

    Full Text Available In this paper, a compact hard X-ray free electron lasers (FEL design is proposed with all X-band rf acceleration and two stage bunch compression. It eliminates the need of a harmonic rf linearization section by employing optics linearization in its first stage bunch compression. Quadrupoles and sextupoles are employed in a bunch compressor one (BC1 design, in such a way that second order longitudinal dispersion of BC1 cancels the second order energy correlation in the electron beam. Start-to-end 6-D simulations are performed with all the collective effects included. Emittance growth in the horizontal plane due to coherent synchrotron radiation is investigated and minimized, to be on a similar level with the successfully operating Linac coherent light source (LCLS. At a FEL radiation wavelength of 0.15 nm, a saturation length of 40 meters can be achieved by employing an undulator with a period of 1.5 cm. Without tapering, a FEL radiation power above 10 GW is achieved with a photon pulse length of 50 fs, which is LCLS-like performance. The overall length of the accelerator plus undulator is around 250 meters which is much shorter than the LCLS length of 1230 meters. That makes it possible to build hard X-ray FEL in a laboratory with limited size.

  5. The electronic band structures of gadolinium chalcogenides: a first-principles prediction for neutron detecting.

    Science.gov (United States)

    Li, Kexue; Liu, Lei; Yu, Peter Y; Chen, Xiaobo; Shen, D Z

    2016-05-11

    By converting the energy of nuclear radiation to excited electrons and holes, semiconductor detectors have provided a highly efficient way for detecting them, such as photons or charged particles. However, for detecting the radiated neutrons, those conventional semiconductors hardly behave well, as few of them possess enough capability for capturing these neutral particles. While the element Gd has the highest nuclear cross section, here for searching proper neutron-detecting semiconductors, we investigate theoretically the Gd chalcogenides whose electronic band structures have never been characterized clearly. Among them, we identify that γ-phase Gd2Se3 should be the best candidate for neutron detecting since it possesses not only the right bandgap of 1.76 eV for devices working under room temperature but also the desired indirect gap nature for charge carriers surviving longer. We propose further that semiconductor neutron detectors with single-neutron sensitivity can be realized with such a Gd-chalcogenide on the condition that their crystals can be grown with good quality.

  6. Valence one-electron and shake-up ionization bands of fluorene, carbazole and dibenzofuran

    International Nuclear Information System (INIS)

    Reza Shojaei, S.H.; Morini, Filippo; Deleuze, Michael S.

    2013-01-01

    Highlights: • The photoelectron spectra of the title compounds are assigned in details. • Shake-up lines are found to severely contaminate both π- and σ-ionization bands. • σ-ionization onsets are subject to severe vibronic coupling complications. • We compare the results of OVGF, ADC(3) and TDDFT calculations. - Abstract: A comprehensive study of the He (I) ultra-violet photoelectron spectra of fluorene, carbazole and dibenzofuran is presented with the aid of one-particle Green’s Function calculations employing the outer-valence Green’s Function (OVGF) approach and the third-order algebraic diagrammatic construction [ADC(3)] scheme, along with Dunning’s correlation consistent basis sets of double and triple zeta quality (cc-pVDZ, cc-pVTZ). Extrapolations of the ADC(3) results for the outermost one-electron π-ionization energies to the cc-pVTZ basis set enable theoretical insights into He (I) measurements within ∼0.15 eV accuracy, up to the σ-ionization onset. The lower ionization energy of carbazole is the combined result of mesomeric and electronic relaxation effects. OVGF/cc-pVDZ or OVGF/cc-pVTZ pole strengths smaller than 0.85 systematically corroborate a breakdown of the orbital picture of ionization at the ADC(3) level. Comparison is made with calculations of the lowest doublet–doublet excitation energies of the radical cation of fluorene, by means of time-dependent density functional theory (TDDFT)

  7. Multiband model of the valence-band electronic structure in cylindrical GaAs nanowires

    Directory of Open Access Journals (Sweden)

    Čukarić Nemanja A.

    2010-01-01

    Full Text Available We compute the hole states in the GaAs free-standing nanowires, and in the GaAs/(Al,GaAs core-shell nanowires of type I-s, which are grown along the [100] direction. The hole states are extracted from the 4-band Luttinger-Kohn Hamiltonian, which explicitly takes into account mixing between the light and heavy holes. The axial aproximation is adopted, which allowed classification of states according to the total angular monentum (fz when expressed in units of the Planck constant. The envelope functions are expanded in Bessel functions of the first kind. The dispersion relations of the subbands E(kz obtained by the devised method do not resemble parabolas, which is otherwise a feature of the dispersion relations of the conduction subbands. Furthermore, the energy levels of holes whose total orbital momentum is fz=1/2 are shown to cross for a free-standing wire. The low energy fz=1/2 states are found to anticross, but these anticrossings turn into crossings when the ratio of the inner and outer radius of the core-shell wire takes a certain value. The influence of the geometric parameters on the dispersion relations is considered for both free standing and core-shell nanowires.

  8. Magnetic oscillations and quasiparticle band structure in the mixed state of type-II superconductors

    International Nuclear Information System (INIS)

    Norman, M.R.; MacDonald, A.H.; Akera, H.

    1995-01-01

    We consider magnetic oscillations due to Landau quantization in the mixed state of type-II superconductors. Our work is based on a previously developed formalism which allows the mean-field gap equations of the Abrikosov state to be conveniently solved in a Landau-level representation. We find that the quasiparticle band structure changes qualitatively when the pairing self-energy becomes comparable to the Landau-level separation. For small pairing self-energies, Landau-level mixing due to the superconducting order is weak and magnetic oscillations survive in the superconducting state although they are damped. We find that the width of the quasiparticle Landau levels in this regime varies approximately as Δ 0 n μ -1/4 where Δ 0 is proportional to the magnitude of the order parameter and n μ is the Landau-level index at the Fermi energy. For larger pairing self-energies, the lowest energy quasiparticle bands occur in pairs which are nearly equally spaced from each other and evolve with weakening magnetic field toward the bound states of an isolated vortex core. These bands have a weak magnetic field dependence and magnetic oscillations vanish rapidly in this regime. We discuss recent observations of the de Haas--van Alphen effect in the mixed state of several type-II superconductors in light of our results

  9. One-dimensional versus two-dimensional electronic states in vicinal surfaces

    International Nuclear Information System (INIS)

    Ortega, J E; Ruiz-Oses, M; Cordon, J; Mugarza, A; Kuntze, J; Schiller, F

    2005-01-01

    Vicinal surfaces with periodic arrays of steps are among the simplest lateral nanostructures. In particular, noble metal surfaces vicinal to the (1 1 1) plane are excellent test systems to explore the basic electronic properties in one-dimensional superlattices by means of angular photoemission. These surfaces are characterized by strong emissions from free-electron-like surface states that scatter at step edges. Thereby, the two-dimensional surface state displays superlattice band folding and, depending on the step lattice constant d, it splits into one-dimensional quantum well levels. Here we use high-resolution, angle-resolved photoemission to analyse surface states in a variety of samples, in trying to illustrate the changes in surface state bands as a function of d

  10. Preliminary design and optimization of a G-band extended interaction oscillator based on a pseudospark-sourced electron beam

    Energy Technology Data Exchange (ETDEWEB)

    Yin, Y., E-mail: yong.yin@strath.ac.uk, E-mail: yinyong@uestc.edu.cn [School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China); Department of Physics, Scottish Universities Physics Alliance, University of Strathclyde, Glasgow G4 0NG (United Kingdom); He, W.; Zhang, L.; Yin, H.; Cross, A. W. [Department of Physics, Scottish Universities Physics Alliance, University of Strathclyde, Glasgow G4 0NG (United Kingdom)

    2015-07-15

    The design and simulation of a G-band extended interaction oscillator (EIO) driven by a pseudospark-sourced electron beam is presented. The characteristic of the EIO and the pseudospark-based electron beam were studied to enhance the performance of the newly proposed device. The beam-wave interaction of the EIO can be optimized by choosing a suitable pseudospark discharging voltage and by widening the operating voltage region of the EIO circuit. Simulation results show that a peak power of over 240 W can be achieved at G-band using a pseudospark discharge voltage of 41 kV.

  11. Lifetimes of the low spin states in the superdeformed band of {sup 192}Hg

    Energy Technology Data Exchange (ETDEWEB)

    Lee, I Y; Baktash, C; Cullen, D; Garrett, J D; Johnson, N R; McGowan, F K; Winchell, D F [Oak Ridge National Lab., TN (United States); Yu, C H [Tennessee Univ., Knoxville, TN (United States)

    1992-08-01

    Superdeformed (SD) states with a 2:1 axis ratio have been observed in nuclei in the A = 150, 190, and the actinide regions. These states depopulate into normally deformed (ND) states by gamma decay, but so far the linking transitions have not been observed and the depopulation mechanism is not fully understood. Nuclei in different mass regions decay out at states with different spin (I), excitation energy above the ND yrast line (U) and lifetime {tau}. This variation is due to differences in the nuclear properties such as the barrier penetration probability, the level densities and the gamma transition strength of SD and ND states. One important factor is the competition between the collective E2 decay along the SD band and the statistical decay to the ND states. These transition rates, or the partial lifetimes, can be determined if the lifetime and the intensity of the gamma rays depopulating the SD states are known. (author). 4 refs., 2 tabs., 2 figs.

  12. Band Jahn-Teller effect on the density of states of the magnetic high-Tc superconductors: A model study

    International Nuclear Information System (INIS)

    Pradhan, B.; Mohanta, K.L.; Rout, G.C.

    2012-01-01

    We report here a mean-field study of competing antiferromagnetism, superconductivity and lattice strain phases and their effect on the local density of states of the cuprate system. Our model Hamiltonian incorporating these interactions is reported earlier [G.C. Rout et al., Physica C, 2007]. The analytic expression for superconducting, antiferromagnetism and lattice strain order parameters are calculated and solved self-consistently. The interplay of these order parameters is investigated considering the calculated density of states (DOSs) of the conduction electrons. The DOS displays multiple gap structures with multiple peaks. It is suggested that the tunneling conductance data obtained from the scanning tunneling microscopy (STM) measurements could be interpreted by using the quasi-particle bands calculated from our model Hamiltonian. We have discussed the mechanism to calculate the order parameters from the conductance data.

  13. Commercialization of an S-band standing-wave electron accelerator for industrial applications

    Science.gov (United States)

    Moon, Jin-Hyeok; Kwak, Gyeong-Il; Han, Jae-Ik; Lee, Gyu-Baek; Jeon, Seong-Hwan; Kim, Jae-Young; Hwang, Cheol-Bin; Lee, Gi-Yong; Kim, Young-Man; Park, Sung-Ju

    2016-09-01

    An electron accelerator system has been developed for use in industrial, as well as possible medical, applications. Based on our experiences achieved during prototype system development and various electron beam acceleration tests, we have built a stable and compact system for sales purposes. We have integrated a self-developed accelerating cavity, an E-gun pulse driver, a radio-frequency (RF) power system, a vacuum system, a cooling system, etc. into a frame with a size of 1800 × 1000 × 1500 mm3. The accelerating structure is a side-coupled standing-wave type operating in the π/2 mode (tuned to~3 GHz). The RF power is provided by using a magnetron driven by a solid-state modulator. The electron gun is a triode type with a dispenser cathode (diameter of 11 mm). The system is capable of delivering a maximum 900-W average electron beam power with tight focusing at the target. Until now, we have performed various electron beam tests and X-ray beam tests after having built the system, have completed the beam assessment for commercializations, and have been preparing full-fledged sales activity. This article reports on our system development processes and on some of our early test results for commercializations.

  14. Creation of paired electron states in the gap of semiconducting carbon nanotubes by correlated hydrogen adsorption

    International Nuclear Information System (INIS)

    Buchs, Gilles; Krasheninnikov, Arkady V; Ruffieux, Pascal; Groening, Pierangelo; Foster, Adam S; Nieminen, Risto M; Groening, Oliver

    2007-01-01

    The specific, local modification of the electronic structure of carbon nanomaterials is as important for novel electronic device fabrication as the doping in the case of silicon-based electronics. Here, we report low temperature scanning tunneling microscopy and spectroscopy study of semiconducting carbon nanotubes subjected to hydrogen-plasma treatment. We show that plasma treatment mostly results in the creation of paired electronic states in the nanotube band gap. Combined with extensive first-principle simulations, our results provide direct evidence that these states originate from correlated chemisorption of hydrogen adatoms on the tube surface. The energy splitting of the paired states is governed by the adatom-adatom interaction, so that controlled hydrogenation can be used for engineering the local electronic structure of nanotubes and other sp 2 -bonded nanocarbon systems

  15. Electron correlations in solid state physics

    International Nuclear Information System (INIS)

    Freericks, J.K.

    1991-04-01

    Exactly solvable models of electron correlations in solid state physics are presented. These models include the spinless Falicov- Kimball model, the t-t'-J model, and the Hubbard model. The spinless Falicov-Kimball model is analyzed in one-dimension. Perturbation theory and numerical techniques are employed to determine the phase diagram at zero temperature. A fractal structure is found where the ground-state changes (discontinuously) at each rational electron filling. The t-t'-J model (strongly interacting limit of a Hubbard model) is studied on eight-site small clusters in the simple-cubic, body-centered-cubic, face-centered-cubic, and square lattices. Symmetry is used to simplify the problem and determine the exact many-body wavefunctions. Ground states are found that exhibit magnetic order or heavy-fermionic character. Attempts to extrapolate to the thermodynamic limit are also made. The Hubbard model is examined on an eight-site square-lattice cluster in the presence of and in the absence of a ''magnetic field'' that couples only to orbital motion. A new magnetic phase is discovered for the ordinary Hubbard model at half-filling. In the ''magnetic field'' case, it is found that the strongly frustrated Heisenberg model may be studied from adiabatic continuation of a tight-binding model (from weak to strong coupling) at one point. The full symmetries of the Hamiltonian are utilized to make the exact diagonalization feasibile. Finally, the presence of ''hidden'' extra symmetry for finite size clusters with periodic boundary conditions is analyzed for a variety of clusters. Moderately sized systems allow nonrigid transformations that map a lattice onto itself preserving its neighbor structure; similar operations are not present in smaller or larger systems. The additional symmetry requires particular representations of the space group to stick together explaining many puzzling degeneracies found in exact diagonalization studies

  16. Trap density of states in n-channel organic transistors: variable temperature characteristics and band transport

    International Nuclear Information System (INIS)

    Cho, Joung-min; Akiyama, Yuto; Kakinuma, Tomoyuki; Mori, Takehiko

    2013-01-01

    We have investigated trap density of states (trap DOS) in n-channel organic field-effect transistors based on N,N ’-bis(cyclohexyl)naphthalene diimide (Cy-NDI) and dimethyldicyanoquinonediimine (DMDCNQI). A new method is proposed to extract trap DOS from the Arrhenius plot of the temperature-dependent transconductance. Double exponential trap DOS are observed, in which Cy-NDI has considerable deep states, by contrast, DMDCNQI has substantial tail states. In addition, numerical simulation of the transistor characteristics has been conducted by assuming an exponential trap distribution and the interface approximation. Temperature dependence of transfer characteristics are well reproduced only using several parameters, and the trap DOS obtained from the simulated characteristics are in good agreement with the assumed trap DOS, indicating that our analysis is self-consistent. Although the experimentally obtained Meyer-Neldel temperature is related to the trap distribution width, the simulation satisfies the Meyer-Neldel rule only very phenomenologically. The simulation also reveals that the subthreshold swing is not always a good indicator of the total trap amount, because it also largely depends on the trap distribution width. Finally, band transport is explored from the simulation having a small number of traps. A crossing point of the transfer curves and negative activation energy above a certain gate voltage are observed in the simulated characteristics, where the critical V G above which band transport is realized is determined by the sum of the trapped and free charge states below the conduction band edge

  17. Electron paramagnetic resonance detection of carotenoid triplet states

    International Nuclear Information System (INIS)

    Frank, H.A.; Bolt, J.D.; deCosta, S.M.; Sauer, K.

    1980-01-01

    Triplet states of carotenoids have been detected by X-band electron paramagnetic resonance (EPR) and are reported here for the first time. The systems in which carotenoid triplets are observed include cells of photosynthetic bacteria, isolated bacteriochlorophyll-protein complexes, and detergent micelles which contain β-carotene. It is well known that if electron transfer is blocked following the initial acceptor in the bacterial photochemical reaction center, back reaction of the primary radical pair produces a bacteriochlorophyll dimer triplet. Previous optical studies have shown that in reaction centers containing carotenoids the bacteriochlorophyll dimer triplet sensitizes the carotenoid triplet. We have observed this carotenoid triplet state by EPR in reaction centers of Rhodopseudomonas sphaeroides, strain 2.4.1 (wild type), which contain the carotenoid spheroidene. The zero-field splitting parameters of the triplet spectrum are /D/ = 0.0290 +- 0.0005 cm -1 and /E/ = 0.0044 +-0.0006 cm -1 , in contrast with the parameters of the bacteriochlorophyll dimer triplet, which are /D/ = 0.0189 +- 0.0004 cm -1 and /E/ = 0.0032 +- 0.004 cm -1 . Bacteriochlorophyll in a light harvesting protein complex from Rps. sphaeroides, wild type, also sensitizes carotenoid triplet formation. In whole cells the EPR spectra vary with temperature between 100 and 10 K. Carotenoid triplets also have been observed by EPR in whole cells of Rps. sphaeroides and cells of Rhodospirillum rubrum which contain the carotenoid spirilloxanthin. Attempts to observe the triplet state EPR spectrum of β-carotene in numerous organic solvents failed. However, in nonionic detergent micelles and in phospholipid bilayer vesicles β-carotene gives a triplet state spectrum with /D/ = 0.0333 +- 0.0010 cm -1 and /E/ = 0.0037 +- 0.0010 cm -1 . 6 figures, 1 table

  18. Simple method of obtaining the band strengths in the electronic spectra of diatomic molecules

    International Nuclear Information System (INIS)

    Gowda, L.S.; Balaji, V.N.

    1977-01-01

    It is shown that relative band strengths of diatomic molecules for which the product of Franck-Condon factor and r-centroid is approximately equal to 1 for (0,0) band can be determined by a simple method which is in good agreement with the smoothed array of experimental values. Such values for the Swan bands of the C 2 molecule are compared with the band strengths of the simple method. It is noted that the Swan bands are one of the outstanding features of R- and N-type stars and of the heads of comets

  19. Optimizing mesoscopic two-band superconductors for observation of fractional vortex states

    Energy Technology Data Exchange (ETDEWEB)

    Piña, Juan C. [Departamento de Física, Universidade Federal de Pernambuco, Cidade Universitária, 50670-901 Recife, PE (Brazil); Núcleo de Tecnologia, CAA, Universidade Federal de Pernambuco, 55002-970 Caruaru, PE (Brazil); Souza Silva, Clécio C. de, E-mail: clecio@df.ufpe [Departamento de Física, Universidade Federal de Pernambuco, Cidade Universitária, 50670-901 Recife, PE (Brazil); Milošević, Milorad V. [Departamento de Física, Universidade Federal do Ceará, 60455-900 Fortaleza, Ceará (Brazil); Departement Fysica, Universiteit Antwerpen, Groenenborgerlaan 171, B-2020 Antwerpen (Belgium)

    2014-08-15

    Highlights: • Observation of fractional vortices in two-band superconductors of broad size range. • There is a minimal sample size for observing each particular fractional state. • Optimal value for stability of each fractional state is determined. • A suitable magnetic dot enhances stability even further. - Abstract: Using the two-component Ginzburg–Landau model, we investigate the effect of sample size and magnitude and homogeneity of external magnetic field on the stability of fractional vortex states in a mesoscopic two-band superconducting disk. We found that each fractional state has a preferable sample size, for which the range of applied field in which the state is stable is pronouncedly large. Vice versa, there exists an optimal magnitude of applied field for which a large range of possible sample radii will support the considered fractional state. Finally, we show that the stability of fractional states can be enhanced even further by magnetic nanostructuring of the sample, i.e. by suitably chosen geometrical parameters and magnetic moment of a ferromagnetic dot placed on top of the superconducting disk.

  20. Changes in the surface electronic states of semiconductor fine particles induced by high energy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Yamaki, Tetsuya; Asai, Keisuke; Ishigure, Kenkichi [Tokyo Univ. (Japan); Shibata, Hiromi

    1997-03-01

    The changes in the surface electronic states of Q-sized semiconductor particles in Langmuir-Blodgett (LB) films, induced by high energy ion irradiation, were examined by observation of ion induced emission and photoluminescence (PL). Various emission bands attributed to different defect sites in the band gap were observed at the initial irradiation stage. As the dose increased, the emissions via the trapping sites decreased in intensity while the band-edge emission developed. This suggests that the ion irradiation would remove almost all the trapping sites in the band gap. The low energy emissions, which show a multiexponential decay, were due to a donor-acceptor recombination between the deeply trapped carriers. It was found that the processes of formation, reaction, and stabilization of the trapping sites would predominantly occur under the photooxidizing conditions. (author)

  1. Monitoring of the state of the paper machine circulation water with a wide-band impedance measurement; Paperikoneen kiertoveden tilan seuranta laajakaistaisella impedanssimittauksella - MPKT 02

    Energy Technology Data Exchange (ETDEWEB)

    Varpula, T [VTT Automation, Espoo (Finland). Measurement Technology

    1999-12-31

    A new measurement method for monitoring the chemical state of the circulation water in the paper machine is proposed and studied. In the method, the electrical properties - conductivity and permittivity - of the water are measured in a wide frequency band: 20 Hz - 10 mhz. Large-molecule organic compounds in the water are expected cause characteristic changes in the dielectric properties of the water. Continuous monitoring of the permittivity in the wide frequency band thus reveals their presence. Various electronic measurement setups for the measurement are constructed and studied by using test samples. If the method turns out to be promising, a prototype device will be made. (orig.)

  2. Monitoring of the state of the paper machine circulation water with a wide-band impedance measurement; Paperikoneen kiertoveden tilan seuranta laajakaistaisella impedanssimittauksella - MPKT 02

    Energy Technology Data Exchange (ETDEWEB)

    Varpula, T. [VTT Automation, Espoo (Finland). Measurement Technology

    1998-12-31

    A new measurement method for monitoring the chemical state of the circulation water in the paper machine is proposed and studied. In the method, the electrical properties - conductivity and permittivity - of the water are measured in a wide frequency band: 20 Hz - 10 mhz. Large-molecule organic compounds in the water are expected cause characteristic changes in the dielectric properties of the water. Continuous monitoring of the permittivity in the wide frequency band thus reveals their presence. Various electronic measurement setups for the measurement are constructed and studied by using test samples. If the method turns out to be promising, a prototype device will be made. (orig.)

  3. Nature of the valence band states in Bi2(Ca, Sr, La)3Cu2O8

    International Nuclear Information System (INIS)

    Wells, B.O.; Lindberg, P.A.P.; Shen, Z.; Dessau, D.S.; Spicer, W.E.; Lindau, I.; Mitzi, D.B.; Kapitulnik, A.

    1990-01-01

    We have used photoemission spectroscopy to examine the symmetry of the occupied states of the valence band for the La doped superconductor Bi 2 (Ca, Sr, La) 3 Cu 2 O 8 . While the oxygen states near the bottom of the 7 eV wide valence band exhibit predominantly O 2p z symmetry, the states at the top of the valence band extending to the Fermi level are found to have primarily O 2p x and O 2p y character. We have also examined anomalous intensity enhancements in the valence band feature for photon energies near 18 eV. These enhancements, which occur at photon energies ranging from 15.8 to 18.0 eV for the different valence band features, are not consistent with either simple final state effects or direct O2s transitions to unoccupied O2p states

  4. Electron band bending and surface sensitivity: X-ray photoelectron spectroscopy of polar GaN surfaces

    Czech Academy of Sciences Publication Activity Database

    Bartoš, Igor; Romanyuk, Olexandr; Paskova, T.; Jiříček, Petr

    2017-01-01

    Roč. 664, Oct (2017), s. 241-245 ISSN 0039-6028 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA MŠk LM2015088 Institutional support: RVO:68378271 Keywords : GaN * XPS * band banding Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 2.062, year: 2016

  5. Transition state region in the A-Band photodissociation of allyl iodide—A femtosecond extreme ultraviolet transient absorption study

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacherjee, Aditi, E-mail: abhattacherjee@berkeley.edu, E-mail: andrewattar@berkeley.edu; Attar, Andrew R., E-mail: abhattacherjee@berkeley.edu, E-mail: andrewattar@berkeley.edu [Department of Chemistry, University of California, Berkeley, California 94720 (United States); Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Leone, Stephen R., E-mail: srl@berkeley.edu [Department of Chemistry, University of California, Berkeley, California 94720 (United States); Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Physics, University of California, Berkeley, California 94720 (United States)

    2016-03-28

    Femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy based on a high-harmonic generation source is used to study the 266 nm induced A-band photodissociation dynamics of allyl iodide (CH{sub 2} =CHCH{sub 2}I). The photolysis of the C—I bond at this wavelength produces iodine atoms both in the ground ({sup 2}P{sub 3/2}, I) and spin-orbit excited ({sup 2}P{sub 1/2}, I*) states, with the latter as the predominant channel. Using XUV absorption at the iodine N{sub 4/5} edge (45–60 eV), the experiments constitute a direct probe of not only the long-lived atomic iodine reaction products but also the fleeting transition state region of the repulsive n{sub I}σ{sup ∗}{sub C—I} excited states. Specifically, three distinct features are identified in the XUV transient absorption spectrum at 45.3 eV, 47.4 eV, and 48.4 eV (denoted transients A, B, and C, respectively), which arise from the repulsive valence-excited nσ{sup ∗} states and project onto the high-lying core-excited states of the dissociating molecule via excitation of 4d(I) core electrons. Transients A and B originate from 4d(I) → n(I) core-to-valence transitions, whereas transient C is best assigned to a 4d(I) →σ{sup ∗}(C—I) transition. The measured differential absorbance of these new features along with the I/I* branching ratios known from the literature is used to suggest a more definitive assignment, albeit provisional, of the transients to specific dissociative states within the A-band manifold. The transients are found to peak around 55 fs–65 fs and decay completely by 145 fs–185 fs, demonstrating the ability of XUV spectroscopy to map the evolution of reactants into products in real time. The similarity in the energies of transients A and B with analogous features observed in methyl iodide [Attar et al. J. Phys. Chem. Lett. 6, 5072, (2015)] together with the new observation of transient C in the present work provides a more complete picture of the valence electronic

  6. Electronically shielded solid state charged particle detector

    International Nuclear Information System (INIS)

    Balmer, D.K.; Haverty, T.W.; Nordin, C.W.; Tyree, W.H.

    1996-01-01

    An electronically shielded solid state charged particle detector system having enhanced radio frequency interference immunity includes a detector housing with a detector entrance opening for receiving the charged particles. A charged particle detector having an active surface is disposed within the housing. The active surface faces toward the detector entrance opening for providing electrical signals representative of the received charged particles when the received charged particles are applied to the active surface. A conductive layer is disposed upon the active surface. In a preferred embodiment, a nonconductive layer is disposed between the conductive layer and the active surface. The conductive layer is electrically coupled to the detector housing to provide a substantially continuous conductive electrical shield surrounding the active surface. The inner surface of the detector housing is supplemented with a radio frequency absorbing material such as ferrite. 1 fig

  7. A Case Study Exploring the Use of GarageBand[TM] and an Electronic Bulletin Board in Preservice Music Education

    Science.gov (United States)

    Vratulis, Vetta; Morton, Charlene

    2011-01-01

    This qualitative research study is an exploration of the merit and shortcomings of using a combination of the music software GarageBand[TM] and an electronic bulletin board to facilitate musical and peer learning in a 3-month elementary music methods curriculum and instruction course. A pedagogical objective of this assignment was to increase the…

  8. Electronic band structure, magnetic, transport and thermodynamic properties of In-filled skutterudites InxCo4Sb12

    International Nuclear Information System (INIS)

    Leszczynski, J; Da Ros, V; Lenoir, B; Dauscher, A; Candolfi, C; Masschelein, P; Hejtmanek, J; Kutorasinski, K; Tobola, J; Smith, R I; Stiewe, C; Müller, E

    2013-01-01

    The thermoelectric and thermodynamic properties of polycrystalline In x Co 4 Sb 12 (0.0 ⩽ x ⩽ 0.26) skutterudites were investigated and analysed between 2 and 800 K by means of electrical resistivity, thermopower, thermal conductivity and specific heat measurements. Hall effect, sound velocity and thermal expansion measurements were also made in order to gain insights into the transport and elastic properties of these compounds. The impact of the In filling on the crystal structure as well as the thermal dynamics of the In atoms were tracked down to 4 K using powder neutron diffraction experiments. Analyses of the transport data were compared with the evolution of the electronic band structure with x determined theoretically within the Korringa–Kohn–Rostoker method with the coherent potential approximation. These calculations indicate that In gives rise to a remarkably large p-like density of states located at the conduction band edge. The electrical properties show typical trends of heavily doped semiconductors regardless of the In content. The thermal transport in CoSb 3 is strongly influenced by the presence of In in the voids of the crystal structure resulting in a drop in the lattice thermal conductivity values in the whole temperature range. The low value of the Grüneisen parameter suggests that this decrease mainly originates from enhanced mass-fluctuations and point-defect scattering mechanisms. The highest thermoelectric figure of merit ZT ∼ 1.0 at 750 K was achieved at the maximum In filling fraction, i.e. for x = 0.26. (paper)

  9. Full-band quantum simulation of electron devices with the pseudopotential method: Theory, implementation, and applications

    Science.gov (United States)

    Pala, M. G.; Esseni, D.

    2018-03-01

    This paper presents the theory, implementation, and application of a quantum transport modeling approach based on the nonequilibrium Green's function formalism and a full-band empirical pseudopotential Hamiltonian. We here propose to employ a hybrid real-space/plane-wave basis that results in a significant reduction of the computational complexity compared to a full plane-wave basis. To this purpose, we provide a theoretical formulation in the hybrid basis of the quantum confinement, the self-energies of the leads, and the coupling between the device and the leads. After discussing the theory and the implementation of the new simulation methodology, we report results for complete, self-consistent simulations of different electron devices, including a silicon Esaki diode, a thin-body silicon field effect transistor (FET), and a germanium tunnel FET. The simulated transistors have technologically relevant geometrical features with a semiconductor film thickness of about 4 nm and a channel length ranging from 10 to 17 nm. We believe that the newly proposed formalism may find applications also in transport models based on ab initio Hamiltonians, as those employed in density functional theory methods.

  10. Development of a Polarized Electron Gun Based on an S-Band PWT Photoinjector

    CERN Document Server

    Clendenin, J E; Yu, D; Newsham, D; Luo, Y; Smirnov, A

    2003-01-01

    An RF polarized electron gun utilizing the unique features of an integrated, plane-wave-transformer (PWT) photoelectron injector [1] is being developed by DULY Research Inc. in collaboration with SLAC. Modifications to a DULY S-band device [2] include: a re-design of the photocathode/RF backplane interface to accommodate a GaAs cathode; change in the design of the vacuum ports to provide 10-11 Torr operation; the inclusion of a load-lock photocathode replacement system to allow for reactivation and cessation of the GaAs photocathode in a vacuum; and alteration of the magnet field coils to make room for the load-lock. The use of a stainless steel outer tank and cooling rods without copper plating may also provide better vacuum performance at the expense of diminished Q factor. The effectiveness of both the standard cooling rods and synthetic diamond heat sinks for disk cooling is investigated for future linear collider applications operating at a rep rate of 180 Hz and a bunch charge of 2 nC.

  11. ADVANCED X-BAND TEST ACCELERATOR FOR HIGH BRIGHTNESS ELECTRON AND GAMMA RAY BEAMS

    Energy Technology Data Exchange (ETDEWEB)

    Marsh, R A; Anderson, S G; Barty, C P; Chu, T S; Ebbers, C A; Gibson, D J; Hartemann, F V; Adolphsen, C; Jongewaard, E N; Raubenheimer, T; Tantawi, S G; Vlieks, A E; Wang, J W

    2010-05-12

    In support of Compton scattering gamma-ray source efforts at LLNL, a multi-bunch test stand is being developed to investigate accelerator optimization for future upgrades. This test stand will enable work to explore the science and technology paths required to boost the current 10 Hz monoenergetic gamma-ray (MEGa-Ray) technology to an effective repetition rate exceeding 1 kHz, potentially increasing the average gamma-ray brightness by two orders of magnitude. Multiple bunches must be of exceedingly high quality to produce narrow-bandwidth gamma-rays. Modeling efforts will be presented, along with plans for a multi-bunch test stand at LLNL. The test stand will consist of a 5.5 cell X-band rf photoinjector, single accelerator section, and beam diagnostics. The photoinjector will be a high gradient standing wave structure, featuring a dual feed racetrack coupler. The accelerator will increase the electron energy so that the emittance can be measured using quadrupole scanning techniques. Multi-bunch diagnostics will be developed so that the beam quality can be measured and compared with theory. Design will be presented with modeling simulations, and layout plans.

  12. Digital base-band rf control system for the superconducting Darmstadt electron linear accelerator

    Directory of Open Access Journals (Sweden)

    M. Konrad

    2012-05-01

    Full Text Available The accelerating field in superconducting cavities has to be stabilized in amplitude and phase by a radio-frequency (rf control system. Because of their high loaded quality factor superconducting cavities are very susceptible for microphonics. To meet the increased requirements with respect to accuracy, availability, and diagnostics, the previous analog rf control system of the superconducting Darmstadt electron linear accelerator S-DALINAC has been replaced by a digital rf control system. The new hardware consists of two components: An rf module that converts the signal from the cavity down to the base-band and a field-programmable gate array board including a soft CPU that carries out the signal processing steps of the control algorithm. Different algorithms are used for normal-conducting and superconducting cavities. To improve the availability of the control system, techniques for automatic firmware and software deployment have been implemented. Extensive diagnostic features provide the operator with additional information. The architecture of the rf control system as well as the functionality of its components will be presented along with measurements that characterize the performance of the system, yielding, e.g., an amplitude stabilization down to (ΔA/A_{rms}=7×10^{-5} and a phase stabilization of (Δϕ_{rms}=0.8° for superconducting cavities.

  13. Artificial neural network for suppression of banding artifacts in balanced steady-state free precession MRI.

    Science.gov (United States)

    Kim, Ki Hwan; Park, Sung-Hong

    2017-04-01

    The balanced steady-state free precession (bSSFP) MR sequence is frequently used in clinics, but is sensitive to off-resonance effects, which can cause banding artifacts. Often multiple bSSFP datasets are acquired at different phase cycling (PC) angles and then combined in a special way for banding artifact suppression. Many strategies of combining the datasets have been suggested for banding artifact suppression, but there are still limitations in their performance, especially when the number of phase-cycled bSSFP datasets is small. The purpose of this study is to develop a learning-based model to combine the multiple phase-cycled bSSFP datasets for better banding artifact suppression. Multilayer perceptron (MLP) is a feedforward artificial neural network consisting of three layers of input, hidden, and output layers. MLP models were trained by input bSSFP datasets acquired from human brain and knee at 3T, which were separately performed for two and four PC angles. Banding-free bSSFP images were generated by maximum-intensity projection (MIP) of 8 or 12 phase-cycled datasets and were used as targets for training the output layer. The trained MLP models were applied to another brain and knee datasets acquired with different scan parameters and also to multiple phase-cycled bSSFP functional MRI datasets acquired on rat brain at 9.4T, in comparison with the conventional MIP method. Simulations were also performed to validate the MLP approach. Both the simulations and human experiments demonstrated that MLP suppressed banding artifacts significantly, superior to MIP in both banding artifact suppression and SNR efficiency. MLP demonstrated superior performance over MIP for the 9.4T fMRI data as well, which was not used for training the models, while visually preserving the fMRI maps very well. Artificial neural network is a promising technique for combining multiple phase-cycled bSSFP datasets for banding artifact suppression. Copyright © 2016 Elsevier Inc. All

  14. Exact many-electron ground states on diamond and triangle Hubbard chains

    International Nuclear Information System (INIS)

    Gulacsi, Zsolt; Kampf, Arno; Vollhardt, Dieter

    2009-01-01

    We construct exact ground states of interacting electrons on triangle and diamond Hubbard chains. The construction requires (1) a rewriting of the Hamiltonian into positive semidefinite form, (2) the construction of a many-electron ground state of this Hamiltonian, and (3) the proof of the uniqueness of the ground state. This approach works in any dimension, requires no integrability of the model, and only demands sufficiently many microscopic parameters in the Hamiltonian which have to fulfill certain relations. The scheme is first employed to construct exact ground state for the diamond Hubbard chain in a magnetic field. These ground states are found to exhibit a wide range of properties such as flat-band ferromagnetism and correlation induced metallic, half-metallic or insulating behavior, which can be tuned by changing the magnetic flux, local potentials, or electron density. Detailed proofs of the uniqueness of the ground states are presented. By the same technique exact ground states are constructed for triangle Hubbard chains and a one-dimensional periodic Anderson model with nearest-neighbor hybridization. They permit direct comparison with results obtained by variational techniques for f-electron ferromagnetism due to a flat band in CeRh 3 B 2 . (author)

  15. Analysis of the Electronic Crosstalk Effect in Terra MODIS Long-Wave Infrared Photovoltaic Bands Using Lunar Images

    Science.gov (United States)

    Wilson, Truman; Wu, Aisheng; Wang, Zhipeng; Xiong, Xiaoxiong

    2016-01-01

    The Moderate Resolution Imaging Spectroradiometer (MODIS) is one of the key sensors among the suite of remote sensing instruments on board the Earth Observing System Terra and Aqua spacecrafts. For each MODIS spectral band, the sensor degradation has been measured using a set of on-board calibrators. MODIS also uses lunar observations from nearly monthly spacecraft maneuvers, which bring the Moon into view through the space-view port, helping to characterize the scan mirror degradation at a different angles of incidence. Throughout the Terra mission, contamination of the long-wave infrared photovoltaic band (LWIR PV, bands 27-30) signals has been observed in the form of electronic crosstalk, where signal from each of the detectors among the LWIR PV bands can leak to the other detectors, producing a false signal contribution. This contamination has had a noticeable effect on the MODIS science products since 2010 for band 27, and since 2012 for bands 28 and 29. Images of the Moon have been used effectively for determining the contaminating bands, and have also been used to derive correction coefficients for the crosstalk contamination. In this paper, we introduce an updated technique for characterizing the crosstalk contamination among the LWIR PV bands using data from lunar calibration events. This approach takes into account both the in-band and out-of-band contribution to the signal contamination for each detector in bands 27-30, which is not considered in previous works. The crosstalk coefficients can be derived for each lunar calibration event, providing the time dependence of the crosstalk contamination. Application of these coefficients to Earth-view image data results in a significant reduction in image contamination and a correction of the scene radiance for bands 27- 30. Also, this correction shows a significant improvement to certain threshold tests in the MODIS Level-2 Cloud Mask. In this paper, we will detail the methodology used to identify and correct

  16. Metal-induced gap states in ferroelectric capacitors and its relationship with complex band structures

    Science.gov (United States)

    Junquera, Javier; Aguado-Puente, Pablo

    2013-03-01

    At metal-isulator interfaces, the metallic wave functions with an energy eigenvalue within the band gap decay exponentially inside the dielectric (metal-induced gap states, MIGS). These MIGS can be actually regarded as Bloch functions with an associated complex wave vector. Usually only real values of the wave vectors are discussed in text books, since infinite periodicity is assumed and, in that situation, wave functions growing exponentially in any direction would not be physically valid. However, localized wave functions with an exponential decay are indeed perfectly valid solution of the Schrodinger equation in the presence of defects, surfaces or interfaces. For this reason, properties of MIGS have been typically discussed in terms of the complex band structure of bulk materials. The probable dependence on the interface particulars has been rarely taken into account explicitly due to the difficulties to include them into the model or simulations. We aim to characterize from first-principles simulations the MIGS in realistic ferroelectric capacitors and their connection with the complex band structure of the ferroelectric material. We emphasize the influence of the real interface beyond the complex band structure of bulk materials. Financial support provided by MICINN Grant FIS2009-12721-C04-02, and by the European Union Grant No. CP-FP 228989-2 ``OxIDes''. Computer resources provided by the RES.

  17. Dipole bands in high spin states of {sub 57}{sup 135}La{sub 78}

    Energy Technology Data Exchange (ETDEWEB)

    Garg, Ritika; Kumar, S.; Saxena, Mansi; Goyal, Savi; Siwal, Davinder; Verma, S.; Mandal, S. [Department of Physics and Astrophysics, University of Delhi, Delhi - 110007 (India); Palit, R.; Saha, Sudipta; Sethi, J.; Sharma, Sushil K.; Trivedi, T.; Jadav, S. K.; Donthi, R.; Naidu, B. S. [Department of Nuclear and Atomic Physics, Tata Institute of Fundamental Research, Mumbai - 400005 (India)

    2014-08-14

    High spin states of {sup 135}La have been investigated using the reaction {sup 128}Te({sup 11}B,4n){sup 135}La at a beam energy of 50.5 MeV. Two negative parity dipole bands (ΔI = 1) have been established. Crossover E2 transitions have been observed for the first time in one of the dipole bands. For the Tilted Axis Cranking (TAC) calculations, a three-quasiparticle (3qp) configuration π(h{sub 11/2}){sup 1}⊗ν(h{sub 11/2}){sup −2} and a five-quasiparticle (5qp) configuration π(h{sub 11/2}){sup 1}(g{sub 7/2}/d{sub 5/2}){sup 2}⊗ν(h{sub 11/2}){sup −2} have been taken for the two negative parity dipole bands. The comparison of experimental observables with TAC calculations supports the configuration assignments for both the dipole bands.

  18. Electron densities and chemical bonding in TiC, TiN and TiO derived from energy band calculations

    International Nuclear Information System (INIS)

    Blaha, P.

    1983-10-01

    It was the aim of this paper to describe the chemical bonding of TiC, TiN and TiO by means of energy bands and electron densities. Using the respective potentials we have calculated the bandstructure of a finer k-grid with the linearized APW method to obtain accurate densities of states (DOS). These DOS wer partitioned into local partial contributions and the metal d DOS were further decomposed into tsub(2g) and esub(g) symmetry components in order to additionally characterize bonding. The electron densities corresponding to the occupied valence states are obtained from the LAPW calculations. They provide further insight into characteristic trends in the series from TiC to TiO: around the nonmetal site the density shows increasing localisation; around the metal site the deviation from spherical symmetry changes from esub(g) to tsub(2g). Electron density plots of characteristic band states allow to describe different types of bonding occurring in these systems. For TiC and TiN recent measurements of the electron densities exist for samples of TiCsub(0.94) and TiNsub(0.99), where defects cause static displacements of the Ti atoms. If this effect can be compensated by an atomic model one hopefully can extrapolate to stoichiometric composition. This procedure allows a comparison with structure factors derived from theoretical electron densities. The agreement for TiN is very good. For TiC the extrapolated data agree in terms of the deviations from spherical symmetry near the Ti site with the LAPW data, but the densities around both atoms are more localized than in theory. An explanation could be: a) the defects affect the electronic structure in TiCsub(0.94) with respect to TiCsub(1.0): b) the applied atomic model does not properly extrapolate to stoichiometry, because parameters of this model correlate or become unphysical. (Author)

  19. Tunneling of self-trapped states and formation of a band

    International Nuclear Information System (INIS)

    Yonemitsu, K.

    1993-12-01

    Tunneling of a self-trapped kink and formation of a band are studied semi classically in the one-dimensional extended Peierls-Hubbard model near half filling, considering up to Gaussian fluctuations around imaginary-time-dependent periodic motion of electrons and phonons on the stationary phase of the action derived using Slater determinants. In the strong-coupling limit of both the Holstein and attractive Hubbard models, it reproduces analytically-known effective hopping of a single bipolaron because the tunneling involves only one in this limit. The method gives new results in other general cases and is easily applied to excited or more complex systems. 13 refs, 4 figs

  20. Mechanism of band gap persistent photoconductivity (PPC) in SnO{sub 2} nanoscrystalline films: Nature of local states, simulation of PPC and comparison with experiment

    Energy Technology Data Exchange (ETDEWEB)

    Brinzari, V., E-mail: vbrinzari@mail.ru

    2017-07-31

    Highlights: • RT photoconductivity (PC) model of response and decay in SnO{sub 2} film was proposed. • Surface BG electronic states are a source for excitation by photons with hv < E{sub g}. • BG electron LDOS determines the magnitude and time of PC response. • Intergrain barrier height related to oxygen ionosorption determines PC decay time. • Structural disordering results in stretched exponential behavior of PC decay. - Abstract: A phenomenological model of room temperature photoconductivity in nanocrystalline SnO{sub 2} under photon excitation below the fundamental bandgap based on electronic states located at the bottom part of the band gap was proposed. Nature of these states is related to the surface oxygen vacancies and Sn-derived electronic states. Appropriate distribution of these states was considered. Numerical simulation of the photoconductivity response and decay on the basis of balance rate equation for excited electrons and immobile holes was done. Analysis revealed that response time is determined by the photoionization cross section of these states and intensity of illumination. Stationary photoresponse is saturated due to the limited number of these states. Intergrain potential barrier that originated due to the ionosorbed oxygen is the main factor limiting the reverse annihilation process and determining the photoconductivity decay time. Stretched exponential behavior of the photoconductivity decay was interpreted in terms of structural and electronic film disordering that results in asymmetric probability distribution of intergrain barrier heights and corresponding distribution of time constants.

  1. InN/GaN quantum dot superlattices: Charge-carrier states and surface electronic structure

    Science.gov (United States)

    Kanouni, F.; Brezini, A.; Djenane, M.; Zou, Q.

    2018-03-01

    We have theoretically investigated the electron energy spectra and surface states energy in the three dimensionally ordered quantum dot superlattices (QDSLs) made of InN and GaN semiconductors. The QDSL is assumed in this model to be a matrix of GaN containing cubic dots of InN of the same size and uniformly distributed. For the miniband’s structure calculation, the resolution of the effective mass Schrödinger equation is done by decoupling it in the three directions within the framework of Kronig-Penney model. We found that the electrons minibands in infinite ODSLs are clearly different from those in the conventional quantum-well superlattices. The electrons localization and charge-carrier states are very dependent on the quasicrystallographic directions, the size and the shape of the dots which play a role of the artificial atoms in such QD supracrystal. The energy spectrum of the electron states localized at the surface of InN/GaN QDSL is represented by Kronig-Penney like-model, calculated via direct matching procedure. The calculation results show that the substrate breaks symmetrical shape of QDSL on which some localized electronic surface states can be produced in minigap regions. Furthermore, we have noticed that the surface states degeneracy is achieved in like very thin bands located in the minigaps, identified by different quantum numbers nx, ny, nz. Moreover, the surface energy bands split due to the reduction of the symmetry of the QDSL in z-direction.

  2. Ti α - ω phase transformation and metastable structure, revealed by the solid-state nudged elastic band method

    Science.gov (United States)

    Zarkevich, Nikolai; Johnson, Duane D.

    Titanium is on of the four most utilized structural metals, and, hence, its structural changes and potential metastable phases under stress are of considerable importance. Using DFT+U combined with the generalized solid-state nudged elastic band (SS-NEB) method, we consider the pressure-driven transformation between Ti α and ω phases, and find an intermediate metastable body-centered orthorhombic (bco) structure of lower density. We verify its stability, assess the phonons and electronic structure, and compare computational results to experiment. Interestingly, standard density functional theory (DFT) yields the ω phase as the Ti ground state, in contradiction to the observed α phase at low pressure and temperature. We correct this by proper consideration of the strongly correlated d-electrons, and utilize DFT+U method in the SS-NEB to obtain the relevant transformation pathway and structures. We use methods developed with support by the U.S. Department of Energy (DE-FG02-03ER46026 and DE-AC02-07CH11358). Ames Laboratory is operated for the DOE by Iowa State University under Contract DE-AC02-07CH11358.

  3. Mesoscopic Electronics in Solid State Nanostructures

    CERN Document Server

    Heinzel, Thomas

    2007-01-01

    This text treats electronic transport in the regime where conventional textbook models are no longer applicable, including the effect of electronic phase coherence, energy quantization and single-electron charging. This second edition is completely updated and expanded, and now comprises new chapters on spin electronics and quantum information processing, transport in inhomogeneous magnetic fields, organic/molecular electronics, and applications of field effect transistors. The book also provides an overview of semiconductor processing technologies and experimental techniques. With a number of

  4. Coexistence of spherical states with deformed and superdeformed bands in doubly magic 40Ca; A shell model challenge

    International Nuclear Information System (INIS)

    Caurier, E.; Nowacki, F.; Menendez, J.; Poves, A.

    2007-02-01

    Large scale shell model calculations, with dimensions reaching 10 9 , are carried out to describe the recently observed deformed (ND) and superdeformed (SD) bands based on the first and second excited 0 + states of 40 Ca at 3.35 MeV and 5.21 MeV respectively. A valence space comprising two major oscillator shells, sd and pf, can accommodate most of the relevant degrees of freedom of this problem. The ND band is dominated by configurations with four particles promoted to the pf-shell (4p-4h in short). The SD band by 8p-8h configurations. The ground state of 40 Ca is strongly correlated, but the closed shell still amounts to 65%. The energies of the bands are very well reproduced by the calculations. The out-band transitions connecting the SD band with other states are very small and depend on the details of the mixing among the different np-nh configurations, in spite of that, the calculation describes them reasonably. For the in-band transition probabilities along the SD band, we predict a fairly constant transition quadrupole moment Q 0 (t) ∼ 70 e fm 2 up to J=10, that decreases toward the higher spins. We submit also that the J=8 states of the deformed and superdeformed band are maximally mixed. (authors)

  5. Coexistence of spherical states with deformed and superdeformed bands in doubly magic 40Ca: A shell-model challenge

    International Nuclear Information System (INIS)

    Caurier, E.; Nowacki, F.; Menendez, J.; Poves, A.

    2007-01-01

    Large-scale shell-model calculations, with dimensions reaching 10 9 , are carried out to describe the recently observed deformed (ND) and superdeformed (SD) bands based on the first and second excited 0 + states of 40 Ca at 3.35 and 5.21 MeV, respectively. A valence space comprising two major oscillator shells, sd and pf, can accommodate most of the relevant degrees of freedom of this problem. The ND band is dominated by configurations with four particles promoted to the pf shell (4p-4h in short). The SD band by 8p-8h configurations. The ground state of 40 Ca is strongly correlated, but the closed shell still amounts to 65%. The energies of the bands are very well reproduced by the calculations. The out-band transitions connecting the SD band with other states are very small and depend on the details of the mixing among the different np-nh configurations; in spite of that, the calculation describes them reasonably. For the in-band transition probabilities along the SD band, we predict a fairly constant transition quadrupole moment Q 0 (t)∼170 e fm 2 up to J=10 that decreases toward the higher spins. We submit also that the J=8 states of the deformed and superdeformed bands are maximally mixed

  6. Investigation on the optimal magnetic field of a cusp electron gun for a W-band gyro-TWA

    Science.gov (United States)

    Zhang, Liang; He, Wenlong; Donaldson, Craig R.; Cross, Adrian W.

    2018-05-01

    High efficiency and broadband operation of a gyrotron traveling wave amplifier (gyro-TWA) require a high-quality electron beam with low-velocity spreads. The beam velocity spreads are mainly due to the differences of the electric and magnetic fields that the electrons withstand the electron gun. This paper investigates the possibility to decouple the design of electron gun geometry and the magnet system while still achieving optimal results, through a case study of designing a cusp electron gun for a W-band gyro-TWA. A global multiple-objective optimization routing was used to optimize the electron gun geometry for different predefined magnetic field profiles individually. Their results were compared and the properties of the required magnetic field profile are summarized.

  7. Identification of Soil Freezing and Thawing States Using SAR Polarimetry at C-Band

    Directory of Open Access Journals (Sweden)

    Thomas Jagdhuber

    2014-03-01

    Full Text Available The monitoring of soil freezing and thawing states over large areas is very challenging on ground. In order to investigate the potential and the limitations of space-borne SAR polarimetry at C-band for soil state survey, analyses were conducted on an entire winter time series of fully polarimetric RADARSAT-2 data from 2011/2012 to identify freezing as well as thawing states within the soil. The polarimetric data were acquired over the Sodankylä test site in Finland together with in situ measurements of the soil and the snow cover. The analyses indicate clearly that the dynamics of the polarimetric entropy and mean scattering alpha angle are directly correlated to soil freezing and thawing states, even under distinct dry snow cover. First modeling attempts using the Extended Bragg soil scattering model justify the observed trends, which indicate surface-like scattering during frozen soil conditions and multiple/volume scattering for thawed soils. Hence, these first investigations at C-band foster motivation to work towards a robust polarimetric detection of soil freezing and thawing states as well as their transition phase.

  8. Visualizing One-Dimensional Electronic States and their Scattering in Semi-conducting Nanowires

    Science.gov (United States)

    Beidenkopf, Haim; Reiner, Jonathan; Norris, Andrew; Nayak, Abhay Kumar; Avraham, Nurit; Shtrikman, Hadas

    One-dimensional electronic systems constitute a fascinating playground for the emergence of exotic electronic effects and phases, within and beyond the Tomonaga-Luttinger liquid paradigm. More recently topological superconductivity and Majorana modes were added to that long list of phenomena. We report scanning tunneling microscopy and spectroscopy measurements conducted on pristine, epitaxialy grown InAs nanowires. We resolve the 1D electronic band structure manifested both via Van-Hove singularities in the local density-of-states, as well as by the quasi-particle interference patterns, induced by scattering from surface impurities. By studying the scattering of the one-dimensional electronic states off various scatterers, including crystallographic defects and the nanowire end, we identify new one-dimensional relaxation regimes and yet unexplored effects of interactions. Some of these may bear implications on the topological superconducting state and Majorana modes therein. The authors acknowledge support from the Israeli Science Foundation (ISF).

  9. Optimization of a triode-type cusp electron gun for a W-band gyro-TWA

    Science.gov (United States)

    Zhang, Liang; Donaldson, Craig R.; He, Wenlong

    2018-04-01

    A triode-type cusp electron gun was optimized through numerical simulations for a W-band gyrotron traveling wave amplifier. An additional electrode in front of the cathode could switch the electron beam on and off instantly when its electric potential is properly biased. An optimal electron beam of current 1.7 A and a velocity ratio (alpha) of 1.12 with an alpha spread of ˜10.7% was achieved when the triode gun was operated at 40 kV.

  10. NiTi shape memory via solid-state nudge-elastic band

    Science.gov (United States)

    Zarkevich, Nikolai A.; Johnson, Duane D.

    2014-03-01

    We determine atomic mechanisms of the shape memory effect in NiTi from a generalized solid-state nudge elastic band (SSNEB) method. We consider transformation between the austenite B2 and the ground-state base-centered orthorhombic (BCO) structures. In these pathways we obtain the R-phase and discuss its structure. We confirm that BCO is the ground state, and determine the pathways to BCO martensite, which dictate transition barriers. While ideal B2 is unstable, we find a B2-like NiTi high-temperature solid phase with significant local displacement disorder, which is B2 on average. This B2-like phase appears to be entropically stabilized. This work is supported by the U.S. Department of Energy, Office of Basic Energy Science, Division of Materials Science and Engineering. Ames Laboratory is operated for the U.S. DOE by Iowa State University under contract DE-AC02-07CH11358.

  11. On the perspectives of wide-band gap power devices in electronic-based power conversion for renewable systems

    Energy Technology Data Exchange (ETDEWEB)

    Vasconcelos Araujo, Samuel

    2013-10-01

    The high breakdown field from WBG materials allows the construction of unipolar devices with very low specific chip resistance mainly characterized by very low conduction and switching losses, even at high blocking voltages. Suitable concepts for SiC and GaN range from traditional FET structures driven by a MOS interface or a PN-Junction, bipolar devices and even high-electron mobility transistors (HEMT). A detailed revision of the literature will be performed in this work with the objective of providing a broad overview of possible approaches, along with inherent advantages and limitations. In addition to this, a benchmarking of several SiC-based devices technologies rated for 1200 V and 1700 V will be performed against their state-of-the-art Silicon-counterparts. Concerning the application of wide band gap devices in renewable energy systems, a significant cost reduction potential can be obtained due to smaller expenditure with magnetic filters and cooling, alongside higher efficiency levels. These aspects will be discussed in details in order to identify constraints and bottlenecks at application level with special focus on photovoltaic and wind power systems.

  12. Solid-state pulse modulator for a 1.7-MW X-band magnetron

    International Nuclear Information System (INIS)

    Choi, Jaegu; Shin, Yongmoon; Choi, Youngwook; Kim, Kwanho

    2014-01-01

    Medical linear accelerators (LINAC) for cancer treatment require pulse modulators to generate high-power pulses with a fast rise time, flat top and short duration to drive high-power magnetrons. Solid-state pulse modulators (SSPM) for medical LINACs that use high power semiconductor switches with high repetition rates, high stability and long lifetimes have been introduced to replace conventional linear-type pulse generators that use gaseous discharge switches. In this paper, the performance of a developed SSPM, which mainly consists of a capacitor charger, an insulated-gate bipolar transistor (IGBT) - capacitor stack and a pulse transformer, is evaluated with a dummy load and an X-band magnetron load. A theoretical analysis of the pulse transformer, which is a critical element of the SSPM, is carried out. The output pulse has a fast rise time and low droop, such that the modulator can drive the X-band magnetron.

  13. Electronic properties of moire superlattice bands in layered two dimensional materials

    Science.gov (United States)

    Jung, Jeil

    2014-03-01

    When atomically thin two-dimensional materials are layered they often form incommensurate non-crystalline structures that exhibit long period moiré patterns when examined by scanning probes. In this talk, I will present a theoretical method which can be used to derive an effective Hamiltonian for these twisted van der Waals heterostructures using input from ab initio calculations performed on short-period crystalline structures. I will argue that the effective Hamiltonian can quantitatively describe the electronic properties of these layered systems for arbitrary twist angle and lattice constants. Applying this method to the important cases of graphene on graphene and graphene on hexagonal-boron nitride, I will present a series of experimentally observable quantities that can be extracted from their electronic structure, including their density of states and local density of states as a function of twist angle, and compare with available experiments. Work done in collaboration with Allan MacDonald, Shaffique Adam, Arnaud Raoux, Zhenhua Qiao, and Ashley DaSilva; and supported by the Singapore National Research Foundation Fellowship NRF-NRFF2012-01.

  14. Electronic structure of indium-tungsten-oxide alloys and their energy band alignment at the heterojunction to crystalline silicon

    Science.gov (United States)

    Menzel, Dorothee; Mews, Mathias; Rech, Bernd; Korte, Lars

    2018-01-01

    The electronic structure of thermally co-evaporated indium-tungsten-oxide films is investigated. The stoichiometry is varied from pure tungsten oxide to pure indium oxide, and the band alignment at the indium-tungsten-oxide/crystalline silicon heterointerface is monitored. Using in-system photoelectron spectroscopy, optical spectroscopy, and surface photovoltage measurements, we show that the work function of indium-tungsten-oxide continuously decreases from 6.3 eV for tungsten oxide to 4.3 eV for indium oxide, with a concomitant decrease in the band bending at the hetero interface to crystalline silicon than indium oxide.

  15. Electron states in thulium and other rare-earth metals

    International Nuclear Information System (INIS)

    Strange, P.; Fairbairn, W.M.; Lee, P.M.

    1983-01-01

    The LMTO method has been applied to calculate band structures for the heavier rare-earth metals. The calculations are relativistic. Thulium in particular has been considered, where a frozen core approximation is used, and the outer electrons are treated selfconsistently. Problems associated with the localisation and interactions of the 4f electrons are discussed. Teh comparisons between experimental data and calculated quantities are encouraging, but more data on high-purity single crystals would be helpful. (author)

  16. Strongly correlated quasi-one-dimensional bands: Ground states, optical absorption, and phonons

    International Nuclear Information System (INIS)

    Campbell, D.K.; Gammel, J.T.; Loh, E.Y. Jr.

    1989-01-01

    Using the Lanczos method for exact diagonalization on systems up to 14 sites, combined with a novel ''phase randomization'' technique for extracting more information from these small systems, we investigate several aspects of the one-dimensional Peierls-Hubbard Hamiltonian, in the context of trans-polyacetylene: the dependence of the ground state dimerization on the strength of the electron-electron interactions, including the effects of ''off-diagonal'' Coulomb terms generally ignored in the Hubbard model; the phonon vibrational frequencies and dispersion relations, and the optical absorption properties, including the spectrum of absorptions as a function of photon energy. These three different observables provide considerable insight into the effects of electron-electron interactions on the properties of real materials and thus into the nature of strongly correlated electron systems. 29 refs., 11 figs

  17. Electron holography at atomic dimensions -- Present state

    International Nuclear Information System (INIS)

    Lehmann, M.; Lichte, H.

    1999-01-01

    An electron microscope is a wave optical instrument where the object information is carried by an electron wave. However, an important information, the phase of the electron wave, is lost, because only intensities can be recorded in a conventional electron micrograph. Off-axis electron holography solves this phase problem by encoding amplitude and phase information in an interference pattern, the so-called hologram. After reconstruction, a rather unrestricted wave optical analysis can be performed on a computer. The possibilities as well as the current limitations of off-axis electron holography at atomic dimensions are discussed, and they are illustrated at two applications of structure characterization of ε-NbN and YBCO-1237. Finally, an electron microscope equipped with a Cs-corrector, a monochromator, and a Moellenstedt biprism is outlined for subangstrom holography

  18. Local density of optical states in the band gap of a finite one-dimensional photonic crystal

    NARCIS (Netherlands)

    Yeganegi Dastgerdi, Elahe; Lagendijk, Aart; Mosk, Allard; Vos, Willem L.

    2014-01-01

    We study the local density of states (LDOS) in a finite photonic crystal, in particular in the frequency range of the band gap. We propose an original point of view on the band gap, which we consider to be the result of vacuum fluctuations in free space that tunnel in the forbidden range in the

  19. Coherent states of an electron in a quantized electromagnetic wave

    International Nuclear Information System (INIS)

    Bagrov, V.G.; Bukhbinder, I.L.; Gitman, D.M.; Lavrov, P.M.

    1977-01-01

    Coherent states for interacting electrons and photons in a plane elecmagnetic wave are found. Trajectories of the electron and the characteristics of the electromagnetic field are investigated. Limiting transition to the given external field is studied

  20. Elucidation of the electronic states in polyethylene glycol by attenuated Total reflectance spectroscopy in the far-ultraviolet region

    Science.gov (United States)

    Ueno, Nami; Wakabayashi, Tomonari; Morisawa, Yusuke

    2018-05-01

    We measured the attenuated total reflectance-far ultraviolet (ATR-FUV) spectra of poly(ethylene glycol) (PEG; average molecular weights of 200, 300, and 400) and related materials in the liquid state in the 145-200-nm wavelength region. For appropriately assigning the absorption bands, we also performed theoretical simulation of the unit-number dependent electronic spectra. The FUV spectra of PEGs contain three bands, which are assigned to the transitions between n(CH2OCH2)-3s Rydberg state (176 nm), n(CH2OCH2)-3p Rydberg state (163 nm), and n(OH)-3p Rydberg state (153 nm). Since the contribution of n(OH) decreases compared to n(CH2OCH2) with increase in the number of units, the ratios of the molar absorption coefficients, ε, at 153 nm relative to 163 nm, decrease. On the other hand, the ratio of ε at 176 nm to that at 163 nm increases with increase in the number of units, because of the difference in the number of unoccupied orbitals in the transitions. The calculated results suggest that n orbitals form two electronic bands. In the upper band, the electrons expand over the ether chain, whereas in the lower band, the electrons are localized in the terminal OH in the PEGs.

  1. Influence of the aggregate state on band structure and optical properties of C60 computed with different methods

    Science.gov (United States)

    Pal, Amrita; Arabnejad, Saeid; Yamashita, Koichi; Manzhos, Sergei

    2018-05-01

    C60 and C60 based molecules are efficient acceptors and electron transport layers for planar perovskite solar cells. While properties of these molecules are well studied by ab initio methods, those of solid C60, specifically its optical absorption properties, are not. We present a combined density functional theory-Density Functional Tight Binding (DFTB) study of the effect of solid state packing on the band structure and optical absorption of C60. The valence and conduction band edge energies of solid C60 differ on the order of 0.1 eV from single molecule frontier orbital energies. We show that calculations of optical properties using linear response time dependent-DFT(B) or the imaginary part of the dielectric constant (dipole approximation) can result in unrealistically large redshifts in the presence of intermolecular interactions compared to available experimental data. We show that optical spectra computed from the frequency-dependent real polarizability can better reproduce the effect of C60 aggregation on optical absorption, specifically with a generalized gradient approximation functional, and may be more suited to study effects of molecular aggregation.

  2. Electronic structure of the copper oxides: Band picture versus correlated behavior

    Energy Technology Data Exchange (ETDEWEB)

    Pickett, W E; Cohen, R E; Singh, D [Naval Research Lab., Washington, DC (USA); Krakauer, H [Coll. of William and Mary, Williamsburg, VA (USA)

    1989-12-01

    In the 2 1/2 years since the discovery of the high temperature superconducting copper oxides, a great deal has been learned from experiment about their behavior. From the theoretical side, there continues to be developments both within the band picture and from the model Hamiltonian viewpoint emphasizing correlations. In this paper we discuss briefly these complementary viewpoints in relation to certain of the experimental data. Due to our background in the band structure area, we approach the discussion by evaluating which phenomena can be (or has been) accounted for by the standard band approach, and point out which properties appear to require more intricate treatments of correlation. (orig.).

  3. Coherent electron - hole state and femtosecond cooperative emission in bulk GaAs

    International Nuclear Information System (INIS)

    Vasil'ev, Petr P; Kan, H; Ohta, H; Hiruma, T

    2002-01-01

    The conditions for obtaining a collective coherent electron - hole state in semiconductors are discussed. The results of the experimental study of the regime of cooperative recombination of high-density electrons and holes (more than 3 x 10 18 cm -3 ) in bulk GaAs at room temperature are presented. It is shown that the collective pairing of electrons and holes and their condensation cause the formation of a short-living coherent electron - hole BCS-like state, which exhibits radiative recombination in the form of high-power femtosecond optical pulses. It is experimentally demonstrated that almost all of the electrons and holes available are condensed at the very bottoms of the bands and are at the cooperative state. The average lifetime of this state is measured to be of about 300 fs. The dependences of the order parameter (the energy gap of the spectrum of electrons and holes) and the Fermi energy of the coherent BCS state on the electron - hole concentration are obtained. (special issue devoted to the 80th anniversary of academician n g basov's birth)

  4. Ground-State Band and Deformation of the Z = 102 Isotope N 254

    International Nuclear Information System (INIS)

    Reiter, P.; Khoo, T.L.; Lister, C.J.; Seweryniak, D.; Ahmad, I.; Alcorta, M.; Carpenter, M.P.; Cizewski, J.A.; Davids, C.N.; Gervais, G.; Greene, J.P.; Henning, W.F.; Janssens, R.V.; Lauritsen, T.; Siem, S.; Sonzogni, A.A.; Sullivan, D.; Uusitalo, J.; Wiedenhoever, I.; Amzal, N.; Butler, P.A.; Chewter, A.J.; Greenlees, P.T.; Herzberg, R.; Jones, G.D.; Cizewski, J.A.; Ding, K.Y.; Fotiades, N.; Fox, J.D.; Korten, W.; Leino, M.; Vetter, K.; Siem, S.

    1999-01-01

    The ground-state band of the Z=102 isotope 254 No has been identified up to spin 14, indicating that the nucleus is deformed. The deduced quadrupole deformation, β=0.27 , is in agreement with theoretical predictions. These observations confirm that the shell-correction energy responsible for the stability of transfermium nuclei is partly derived from deformation. The survival of 254 No up to spin 14 means that its fission barrier persists at least up to that spin. copyright 1999 The American Physical Society

  5. Electronic energy states of HfSe/sub 2/ and NbSe/sub 2/ by low energy electron loss spectroscopy study

    Energy Technology Data Exchange (ETDEWEB)

    Ito, T; Iwami, M; Hiraki, A [Osaka Univ., Suita (Japan). Faculty of Engineering

    1981-06-01

    Low energy electron loss spectroscopy (ELS) study was performed on 1T-HfSe/sub 2/ (group IVB metal compound) and 2H-NbSe/sub 2/ (group VB metal compound) by using incident electron energies of 30-250 eV. From the loss data in the second derivative form, maxima in density-of-states in the conduction band of the compounds were deduced through the information on the filled core states by X-ray photoelectron spectroscopy. The conduction band of the transition-metal dichalcogenides could be divided into two parts. The results are discussed in relation to the previous work on WS/sub 2/ (group VIB metal compound), and also to proposals based on band calculations and experimental studies on the transition-metal dichalcogenides with constituent metals of group IVB, VB and VIB.

  6. Theoretical analysis and simulation of the influence of self-bunching effects and longitudinal space charge effects on the propagation of keV electron bunch produced by a novel S-band Micro-Pulse electron Gun

    Science.gov (United States)

    Zhao, Jifei; Lu, Xiangyang; Zhou, Kui; Yang, Ziqin; Yang, Deyu; Luo, Xing; Tan, Weiwei; Yang, Yujia

    2016-06-01

    As an important electron source, Micro-Pulse electron Gun (MPG) which is qualified for producing high average current, short pulse, low emittance electron bunches steadily holds promise to use as an electron source of Coherent Smith-Purcell Radiation (CSPR), Free Electron Laser (FEL). The stable output of S-band MPG has been achieved in many labs. To establish reliable foundation for the future application of it, the propagation of picosecond electron bunch produced by MPG should be studied in detail. In this article, the MPG which was working on the rising stage of total effective Secondary Electron Yield (SEY) curve was introduced. The self-bunching mechanism was discussed in depth both in the multipacting amplifying state and the steady working state. The bunch length broadening induced by the longitudinal space-charge (SC) effects was investigated by different theoretical models in different regions. The 2D PIC codes MAGIC and beam dynamic codes TraceWin simulations were also performed in the propagation. The result shows an excellent agreement between the simulation and the theoretical analysis for bunch length evolution.

  7. Theoretical analysis and simulation of the influence of self-bunching effects and longitudinal space charge effects on the propagation of keV electron bunch produced by a novel S-band Micro-Pulse electron Gun

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Jifei; Lu, Xiangyang, E-mail: xylu@pku.edu.cn; Yang, Ziqin; Yang, Deyu; Tan, Weiwei; Yang, Yujia [Institute of Heavy Ion Physics, School of Physics, Peking University, Beijing, 100871 (China); Zhou, Kui; Luo, Xing [Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900 (China)

    2016-06-15

    As an important electron source, Micro-Pulse electron Gun (MPG) which is qualified for producing high average current, short pulse, low emittance electron bunches steadily holds promise to use as an electron source of Coherent Smith-Purcell Radiation (CSPR), Free Electron Laser (FEL). The stable output of S-band MPG has been achieved in many labs. To establish reliable foundation for the future application of it, the propagation of picosecond electron bunch produced by MPG should be studied in detail. In this article, the MPG which was working on the rising stage of total effective Secondary Electron Yield (SEY) curve was introduced. The self-bunching mechanism was discussed in depth both in the multipacting amplifying state and the steady working state. The bunch length broadening induced by the longitudinal space-charge (SC) effects was investigated by different theoretical models in different regions. The 2D PIC codes MAGIC and beam dynamic codes TraceWin simulations were also performed in the propagation. The result shows an excellent agreement between the simulation and the theoretical analysis for bunch length evolution.

  8. Theoretical analysis and simulation of the influence of self-bunching effects and longitudinal space charge effects on the propagation of keV electron bunch produced by a novel S-band Micro-Pulse electron Gun

    Directory of Open Access Journals (Sweden)

    Jifei Zhao

    2016-06-01

    Full Text Available As an important electron source, Micro-Pulse electron Gun (MPG which is qualified for producing high average current, short pulse, low emittance electron bunches steadily holds promise to use as an electron source of Coherent Smith-Purcell Radiation (CSPR, Free Electron Laser (FEL. The stable output of S-band MPG has been achieved in many labs. To establish reliable foundation for the future application of it, the propagation of picosecond electron bunch produced by MPG should be studied in detail. In this article, the MPG which was working on the rising stage of total effective Secondary Electron Yield (SEY curve was introduced. The self-bunching mechanism was discussed in depth both in the multipacting amplifying state and the steady working state. The bunch length broadening induced by the longitudinal space-charge (SC effects was investigated by different theoretical models in different regions. The 2D PIC codes MAGIC and beam dynamic codes TraceWin simulations were also performed in the propagation. The result shows an excellent agreement between the simulation and the theoretical analysis for bunch length evolution.

  9. Ground state of a hydrogen ion molecule immersed in an inhomogeneous electron gas

    International Nuclear Information System (INIS)

    Diaz-Valdes, J.; Gutierrez, F.A.; Matamala, A.R.; Denton, C.D.; Vargas, P.; Valdes, J.E.

    2007-01-01

    In this work we have calculated the ground state energy of the hydrogen molecule, H 2 + , immersed in the highly inhomogeneous electron gas around a metallic surface within the local density approximation. The molecule is perturbed by the electron density of a crystalline surface of Au with the internuclear axis parallel to the surface. The surface spatial electron density is calculated through a linearized band structure method (LMTO-DFT). The ground state of the molecule-ion was calculated using the Born-Oppenheimer approximation for a fixed-ion while the screening effects of the inhomogeneous electron gas are depicted by a Thomas-Fermi like electrostatic potential. We found that within our model the molecular ion dissociates at the critical distance of 2.35a.u. from the first atomic layer of the solid

  10. Electron-tunneling observation of localized excited states in superconducting manganese-doped lead

    International Nuclear Information System (INIS)

    Tsang, J.; Ginsberg, D.M.

    1980-01-01

    We have made electron-tunneling measurements on a dilute, superconducting lead-manganese alloy. A well-defined structure was observed in the ac-conductance--voltage curves, indicating excited states within the BCS energy gap. These states were partially accounted for by Shiba theory when spin-dependent s-, p-, and d-wave scattering were included. The phase shifts used in doing that were the results of band calculations. The experimental data also show the existence of a broad background density of states in the energy gap, which cannot be accounted for by the theory

  11. High-Efficiency, Ka-band Solid-State Power Amplifier Utilizing GaN Technology, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — QuinStar Technology proposes to develop an efficient, solid-state power amplifier (SSPA), operating at Ka-band frequencies, for high data rate, long range space...

  12. High-Efficiency, Ka-Band Solid-State Power Amplifier Utilizing GaN Technology, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — QuinStar Technology proposes to develop a high-efficiency, solid-state power amplifier (SSPA), operating at Ka-band frequencies, for high data rate, long range space...

  13. Upgrade of the ISIR L-band linac at Osaka University and stabilization of the electron beam

    International Nuclear Information System (INIS)

    Kato, R.; Kashiwagi, S.; Yamamoto, T.; Suemine, S.; Isoyama, G.

    2004-01-01

    The L-band electron linac at the Institute of Scientific and Industrial Research, Osaka University has been extensively remodeled to realize high operational stability and reproducibility for advanced studies in beam science and technology. Almost all the peripheral components are replaced with new ones. The modification of the linac has been completed and commissioning is now in progress. In this paper, we will report performance and characteristics of the linac after modification. (author)

  14. Wobbling Motion in the Multi-Bands Crossing Region: Dynamical Coupling Mode Between High- and Low-K States

    International Nuclear Information System (INIS)

    Oi, M.; Ansari, A.; Horibata, T.; Onishi, N.; Walker, P.M.

    2001-01-01

    We analyze a mechanism of coupling of high- and low-K bands in terms of a dynamical treatment for nuclear rotations, i. e., wobbling motion. The wobbling states are produced through the Generator Coordinate Method after Angular Momentum Projection (GCM-after-AMP), in which the intrinsic states are constructed through fully self consistent calculations by the 2d-cranked (or tilted-axis-cranked) HFB method. In particular, the phenomena of ''signature inversion'' and ''signature splitting'' in the t-band (tilted rotational band) are explained in terms of the wobbling model. Our calculations will be compared with new data for in-band E2 transition rates in 182 0s, which may shed light on the mechanism of the anomalous K = 25 isomer decay, directly to the yrast band. (author)

  15. Guide to state-of-the-art electron devices

    CERN Document Server

    2013-01-01

    Concise, high quality and comparative overview of state-of-the-art electron device development, manufacturing technologies and applications Guide to State-of-the-Art Electron Devices marks the 60th anniversary of the IEEE Electron Devices Committee and the 35th anniversary of the IEEE Electron Devices Society, as such it defines the state-of-the-art of electron devices, as well as future directions across the entire field. Spans full range of electron device types such as photovoltaic devices, semiconductor manufacturing and VLSI technology and circuits, covered by IEEE Electron and Devices Society Contributed by internationally respected members of the electron devices community A timely desk reference with fully-integrated colour and a unique lay-out with sidebars to highlight the key terms Discusses the historical developments and speculates on future trends to give a more rounded picture of the topics covered A valuable resource R&D managers; engineers in the semiconductor industry; applied scientists...

  16. Communication: electronic band gaps of semiconducting zig-zag carbon nanotubes from many-body perturbation theory calculations.

    Science.gov (United States)

    Umari, P; Petrenko, O; Taioli, S; De Souza, M M

    2012-05-14

    Electronic band gaps for optically allowed transitions are calculated for a series of semiconducting single-walled zig-zag carbon nanotubes of increasing diameter within the many-body perturbation theory GW method. The dependence of the evaluated gaps with respect to tube diameters is then compared with those found from previous experimental data for optical gaps combined with theoretical estimations of exciton binding energies. We find that our GW gaps confirm the behavior inferred from experiment. The relationship between the electronic gap and the diameter extrapolated from the GW values is also in excellent agreement with a direct measurement recently performed through scanning tunneling spectroscopy.

  17. C-band solid state dual polarization T/R modules for airborne SAR systems

    NARCIS (Netherlands)

    Vermeulen, B.C.B.; Koomen, P.J.; Hoogeboom, P.; Snoeij, P.; Pouwels, H.

    1996-01-01

    The use of distributed power in a, on a phased array antenna based, SAR system offers new possibilities for the system operation. As a preparation for future spaceborne SAR systems using solid state transmitters with electronically steerable phased array antenna, the PHARUS system has been

  18. Nanoscale probing of bandgap states on oxide particles using electron energy-loss spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Qianlang [School for the Engineering of Matter, Transport and Energy, Arizona State University, 85287 AZ (United States); March, Katia [Laboratoire de Physique des Solides, Bâtiment 510, Université Paris-Sud, 91405 Orsay Cedex (France); Crozier, Peter A., E-mail: CROZIER@asu.edu [School for the Engineering of Matter, Transport and Energy, Arizona State University, 85287 AZ (United States)

    2017-07-15

    Surface and near-surface electronic states were probed with nanometer spatial resolution in MgO and TiO{sub 2} anatase nanoparticles using ultra-high energy resolution electron energy-loss spectroscopy (EELS) coupled to a scanning transmission electron microscope (STEM). This combination allows the surface electronic structure determined with spectroscopy to be correlated with nanoparticle size, morphology, facet etc. By acquiring the spectra in aloof beam mode, radiation damage to the surface can be significantly reduced while maintaining the nanometer spatial resolution. MgO and TiO{sub 2} showed very different bandgap features associated with the surface/sub-surface layer of the nanoparticles. Spectral simulations based on dielectric theory and density of states models showed that a plateau feature found in the pre-bandgap region in the spectra from (100) surfaces of 60 nm MgO nanocubes is consistent with a thin hydroxide surface layer. The spectroscopy shows that this hydroxide species gives rise to a broad filled surface state at 1.1 eV above the MgO valence band. At the surfaces of TiO{sub 2} nanoparticles, pronounced peaks were observed in the bandgap region, which could not be well fitted to defect states. In this case, the high refractive index and large particle size may make Cherenkov or guided light modes the likely causes of the peaks. - Highlights: • Bandgap states detected with aloof beam monochromated EELS on oxide nanoparticle surfaces. • Dielectric theory applied to simulate the spectra and interpret surface structure. • Density of states models also be employed to understand the surface electronic structure. • In MgO, one states associate with water species was found close to the valence band edge. • In anatase, two mid-gap states associated with point defects were found.

  19. Spin- and valley-dependent electronic band structure and electronic heat capacity of ferromagnetic silicene in the presence of strain, exchange field and Rashba spin-orbit coupling

    Science.gov (United States)

    Hoi, Bui Dinh; Yarmohammadi, Mohsen; Kazzaz, Houshang Araghi

    2017-10-01

    We studied how the strain, induced exchange field and extrinsic Rashba spin-orbit coupling (RSOC) enhance the electronic band structure (EBS) and electronic heat capacity (EHC) of ferromagnetic silicene in presence of external electric field (EF) by using the Kane-Mele Hamiltonian, Dirac cone approximation and the Green's function approach. Particular attention is paid to investigate the EHC of spin-up and spin-down bands at Dirac K and K‧ points. We have varied the EF, strain, exchange field and RSOC to tune the energy of inter-band transitions and consequently EHC, leading to very promising features for future applications. Evaluation of EF exhibits three phases: Topological insulator (TI), valley-spin polarized metal (VSPM) and band insulator (BI) at given aforementioned parameters. As a new finding, we have found a quantum anomalous Hall phase in BI regime at strong RSOCs. Interestingly, the effective mass of carriers changes with strain, resulting in EHC behaviors. Here, exchange field has the same behavior with EF. Finally, we have confirmed the reported and expected symmetry results for both Dirac points and spins with the study of valley-dependent EHC.

  20. Bulk and interface quantum states of electrons in multi-layer heterostructures with topological materials

    Science.gov (United States)

    Nikolic, Aleksandar; Zhang, Kexin; Barnes, C. H. W.

    2018-06-01

    In this article we describe the bulk and interface quantum states of electrons in multi-layer heterostructures in one dimension, consisting of topological insulators (TIs) and topologically trivial materials. We use and extend an effective four-band continuum Hamiltonian by introducing position dependence to the eight material parameters of the Hamiltonian. We are able to demonstrate complete conduction-valence band mixing in the interface states. We find evidence for topological features of bulk states of multi-layer TI heterostructures, as well as demonstrating both complete and incomplete conduction-valence band inversion at different bulk state energies. We show that the linear k z terms in the low-energy Hamiltonian, arising from overlap of p z orbitals between different atomic layers in the case of chalcogenides, control the amount of tunneling from TIs to trivial insulators. Finally, we show that the same linear k z terms in the low-energy Hamiltonian affect the material’s ability to form the localised interface state, and we demonstrate that due to this effect the spin and probability density localisation in a thin film of Sb2Te3 is incomplete. We show that changing the parameter that controls the magnitude of the overlap of p z orbitals affects the transport characteristics of the topologically conducting states, with incomplete topological state localisation resulting in increased backscattering.

  1. Balanced homodyne detection of optical quantum states at audio-band frequencies and below

    International Nuclear Information System (INIS)

    Stefszky, M S; Mow-Lowry, C M; Chua, S S Y; Shaddock, D A; Buchler, B C; Lam, P K; McClelland, D E; Vahlbruch, H; Khalaidovski, A; Schnabel, R

    2012-01-01

    The advent of stable, highly squeezed states of light has generated great interest in the gravitational wave community as a means for improving the quantum-noise-limited performance of advanced interferometric detectors. To confidently measure these squeezed states, it is first necessary to measure the shot-noise across the frequency band of interest. Technical noise, such as non-stationary events, beam pointing, and parasitic interference, can corrupt shot-noise measurements at low Fourier frequencies, below tens of kilo-hertz. In this paper we present a qualitative investigation into all of the relevant noise sources and the methods by which they can be identified and mitigated in order to achieve quantum noise limited balanced homodyne detection. Using these techniques, flat shot-noise down to Fourier frequencies below 0.5 Hz is produced. This enables the direct observation of large magnitudes of squeezing across the entire audio-band, of particular interest for ground-based interferometric gravitational wave detectors. 11.6 dB of shot-noise suppression is directly observed, with more than 10 dB down to 10 Hz. (paper)

  2. Pressure-induced magneto-structural transition in iron via a modified solid-state nudged elastic band method

    Science.gov (United States)

    Zarkevich, Nikolai A.; Johnson, Duane D.

    2015-03-01

    Materials under pressure may exhibit critical electronic and structural transitions that affect equation of states, as known for superconductors and the magneto-structural transformations of iron with both geophysical and planetary implications. While experiments often use constant-pressure (diamond-anvil cell, DAC) measurements, many theoretical results address a constant-volume transitions, which avoid issues with magnetic collapse but cannot be directly compared to experiment. We establish a modified solid-state nudge elastic band (MSS-NEB) method to handle magnetic systems that may exhibit moment (and volume) collapse during transformation. We apply it to the pressure-induced transformation in iron between the low-pressure body-centered cubic (bcc) and the high-pressure hexagonal close-packed (hcp) phases, find the bcc-hcp equilibrium coexistence pressure and a transitional pathway, and compare to shock and DAC experiments. We use methods developed with support by the U.S. Department of Energy (DE-FG02-03ER46026 and DE-AC02-07CH11358). Ames Laboratory is operated for the DOE by Iowa State University under contract DE-AC02-07CH11358.

  3. A simple model for conduction band states of nitride-based double heteroestructures

    Energy Technology Data Exchange (ETDEWEB)

    Gaggero-Sager, L M; Mora-Ramos, M E, E-mail: lgaggero@uaem.m [Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Av. Universidad 1001, CP 62209, Cuernavaca, Morelos (Mexico)

    2009-05-01

    In this work we propose an analytical expression for the approximate modeling of the potential energy function describing conduction band bending in III-V nitride quantum wells. It is an alternative approach to the self-consistent Poisson-Schoedinger calculation. The model considers the influence of the many electron system and the built-in electric field inside the well. Hartree and exchange contributions are included along the lines of a local-density Thomas-Fermi-based theory. The effects due to the modulated doping in the barriers is also considered. We report the calculation of the energy spectrum as a function of several input parameters: alloy composition in the barriers, barrier doping concentration, and quantum well width. Our results could be of usefulness in the study of optoelectronic properties in this kind of systems.

  4. Free electrons and ionic liquids: study of excited states by means of electron-energy loss spectroscopy and the density functional theory multireference configuration interaction method.

    Science.gov (United States)

    Regeta, Khrystyna; Bannwarth, Christoph; Grimme, Stefan; Allan, Michael

    2015-06-28

    The technique of low energy (0-30 eV) electron impact spectroscopy, originally developed for gas phase molecules, is applied to room temperature ionic liquids (IL). Electron energy loss (EEL) spectra recorded near threshold, by collecting 0-2 eV electrons, are largely continuous, assigned to excitation of a quasi-continuum of high overtones and combination vibrations of low-frequency modes. EEL spectra recorded by collecting 10 eV electrons show predominantly discrete vibrational and electronic bands. The vibrational energy-loss spectra correspond well to IR spectra except for a broadening (∼0.04 eV) caused by the liquid surroundings, and enhanced overtone activity indicating a contribution from resonant excitation mechanism. The spectra of four representative ILs were recorded in the energy range of electronic excitations and compared to density functional theory multireference configuration interaction (DFT/MRCI) calculations, with good agreement. The spectra up to about 8 eV are dominated by π-π* transitions of the aromatic cations. The lowest bands were identified as triplet states. The spectral region 2-8 eV was empty in the case of a cation without π orbitals. The EEL spectrum of a saturated solution of methylene green in an IL band showed the methylene green EEL band at 2 eV, indicating that ILs may be used as a host to study nonvolatile compounds by this technique in the future.

  5. Validity of single term energy expression for ground state rotational band of even-even nuclei

    International Nuclear Information System (INIS)

    Sharma, S.; Kumar, R.; Gupta, J.B.

    2005-01-01

    Full text: There are large numbers of empirical studies of gs band of even-even nuclei in various mass regions. The Bohr-Mottelson's energy expression is E(I) = AX + BX 2 +CX 3 +... where X = I(I+1). The anharmonic vibrator energy expression is: E(I) = al + bl 2 + cl 3 SF model with energy expression: E(I)= pX + qI + rXI... where the terms represents the rotational, vibrational and R-V interaction energy, respectively. The validity f the various energy expressions with two terms had been tested by Sharma for light, medium and heavy mass regions using R I s. R 4 plots (where, spin I=6, 8, 10, 12), which are parameter independent. It was also noted, that of the goodness of energy expression can be judged with the minimum input of energies (i.e. only 2 parameters) and predictability's of the model p to high spins. Recently, Gupta et. al proposed a single term energy expression (SSTE) which was applied for rare earth region. This proposed power law reflected the unity of rotation - vibration in a different way and was successful in explaining the structure of gs-band. It will be useful for test the single term energy expression for light and heavy mass region. The single term expression for energy of ground state band can be written as: E I =axI b , where the index b and the coefficient a are the constant for the band. The values of b+1 and a 1 are as follows: b 1 =log(R 1 )/log(I/2) and a 1 =E I /I b ... The following results were gained: 1) The sharp variation in the value of index b at given spin will be an indication of the change in the shape of the nucleus; 2) The value of E I /I b is fairly constant with spin below back-bending, which reflects the stability of shape with spin; 3) This proposed power law is successful in explaining the structure of gs-band of nuclei

  6. Electronic structure study of wide band gap magnetic semiconductor (La0.6Pr0.4)0.65Ca0.35MnO3 nanocrystals in paramagnetic and ferromagnetic phases

    Science.gov (United States)

    Dwivedi, G. D.; Joshi, Amish G.; Kumar, Shiv; Chou, H.; Yang, K. S.; Jhong, D. J.; Chan, W. L.; Ghosh, A. K.; Chatterjee, Sandip

    2016-04-01

    X-ray circular magnetic dichroism (XMCD), X-ray photoemission spectroscopy (XPS), and ultraviolet photoemission spectroscopy (UPS) techniques were used to study the electronic structure of nanocrystalline (La0.6Pr0.4)0.65Ca0.35MnO3 near Fermi-level. XMCD results indicate that Mn3+ and Mn4+ spins are aligned parallel to each other at 20 K. The low M-H hysteresis curve measured at 5 K confirms ferromagnetic ordering in the (La0.6Pr0.4)0.65Ca0.35MnO3 system. The low temperature valence band XPS indicates that coupling between Mn3d and O2p is enhanced and the electronic states near Fermi-level have been suppressed below TC. The valence band UPS also confirms the suppression of electronic states near Fermi-level below Curie temperature. UPS near Fermi-edge shows that the electronic states are almost absent below 0.5 eV (at 300 K) and 1 eV (at 115 K). This absence clearly demonstrates the existence of a wide band-gap in the system since, for hole-doped semiconductors, the Fermi-level resides just above the valence band maximum.

  7. Empty-electronic-state evolution for Sc and electron dynamics at the 3p-3d giant dipole resonance

    International Nuclear Information System (INIS)

    Hu, Y.; Wagener, T.J.; Gao, Y.; Weaver, J.H.

    1989-01-01

    Inverse photoemission has been used to study the developing electronic states of an early transition metal, Sc, during thin-film growth and to investigate the effects of these states on the 3p-3d giant dipole resonance. Energy- and coverage-dependent intensity variations of the empty Sc states show that the 3d maximum moves 1.1 eV toward the Fermi level as the thickness of the Sc film increases from 1 to 300 A as measured with an incident electron energy of 41.25 eV, an effect attributed to metallic band formation via hybridization of atomic 4s and 3d states. Incident-energy-dependent intensity variations for these empty Sc features show resonant photon emission for incident electron energies above the 3p threshold, with maxima at 43 and 44 eV for 300- and 5-A-thick films, respectively. Considerations of hybridization-induced energy shifts of the empty Sc 3d states demonstrate that the radiative energy changes very little with Sc coverages. These studies indicate coupling of decay channels involving the inverse photoemission continuum and the recombination of the atomic 3p-3d giant dipole transition, the energy of the latter being determined by atomic 3p-3d excitation processes

  8. Electronic states in systems of reduced dimensionality

    International Nuclear Information System (INIS)

    Ulloa, S.E.

    1992-01-01

    This report briefly discusses the following research: magnetically modulated systems, inelastic magnetotunneling, ballistic transport review, screening in reduced dimensions, raman and electron energy loss spectroscopy; and ballistic quantum interference effects. (LSP)

  9. Determination of the band alignment of a-IGZO/a-IGMO heterojunction for high-electron mobility transistor application

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yi-Yu; Qian, Ling-Xuan; Liu, Xing-Zhao [School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu (China); State Key Laboratory of Electronic Thin Films and Integrated Devices, Chengdu (China)

    2017-10-15

    In the past decade, amorphous InGaZnO thin film transistors (a-IGZO TFTs) have become a very promising candidate for application in flat panel displays (FPDs). However, it is difficult to break through the mobility bottleneck of a-IGZO TFTs to obtain mobilities higher than 100 cm{sup 2} V{sup -1} s{sup -1}, thus limiting their use in more advanced applications. Construction of a high-electron mobility transistor (HEMT) based on a heterojunction structure could provide a solution for this problem. In this work, the band alignment of a-IGZO and amorphous InGaMgO (a-IGMO) heterojunction has been investigated using X-ray photoelectron spectroscopy (XPS) and transmission spectra measurements. The valence band (ΔE{sub V}) and conduction band offsets (ΔE{sub C}) were determined as 0.09 and 0.83 eV, respectively. The ΔE{sub C} was large enough to construct a potential well that could favor the appearance of a two-dimensional electron gas (2DEG). Hence, the achievement of an HEMT based on a-IGZO/a-IGMO heterojunction can be expected. Moreover, band bending contributed greatly to such a large ΔE{sub C}, and thus to the formation of electrical confinement structure. Our findings suggest that a-IGZO/a-IGMO heterojunction is a potential candidate for constructing a HEMT and thus breaking through the mobility bottleneck of a-IGZO-based TFTs for the applications in next-generation electronic products. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Determination of the band alignment of a-IGZO/a-IGMO heterojunction for high-electron mobility transistor application

    International Nuclear Information System (INIS)

    Zhang, Yi-Yu; Qian, Ling-Xuan; Liu, Xing-Zhao

    2017-01-01

    In the past decade, amorphous InGaZnO thin film transistors (a-IGZO TFTs) have become a very promising candidate for application in flat panel displays (FPDs). However, it is difficult to break through the mobility bottleneck of a-IGZO TFTs to obtain mobilities higher than 100 cm"2 V"-"1 s"-"1, thus limiting their use in more advanced applications. Construction of a high-electron mobility transistor (HEMT) based on a heterojunction structure could provide a solution for this problem. In this work, the band alignment of a-IGZO and amorphous InGaMgO (a-IGMO) heterojunction has been investigated using X-ray photoelectron spectroscopy (XPS) and transmission spectra measurements. The valence band (ΔE_V) and conduction band offsets (ΔE_C) were determined as 0.09 and 0.83 eV, respectively. The ΔE_C was large enough to construct a potential well that could favor the appearance of a two-dimensional electron gas (2DEG). Hence, the achievement of an HEMT based on a-IGZO/a-IGMO heterojunction can be expected. Moreover, band bending contributed greatly to such a large ΔE_C, and thus to the formation of electrical confinement structure. Our findings suggest that a-IGZO/a-IGMO heterojunction is a potential candidate for constructing a HEMT and thus breaking through the mobility bottleneck of a-IGZO-based TFTs for the applications in next-generation electronic products. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. Effect of point defects on the electronic density states of SnC nanosheets: First-principles calculations

    Directory of Open Access Journals (Sweden)

    Soleyman Majidi

    Full Text Available In this work, we investigated the electronic and structural properties of various defects including single Sn and C vacancies, double vacancy of the Sn and C atoms, anti-sites, position exchange and the Stone–Wales (SW defects in SnC nanosheets by using density-functional theory (DFT. We found that various vacancy defects in the SnC monolayer can change the electronic and structural properties. Our results show that the SnC is an indirect band gap compound, with the band gap of 2.10 eV. The system turns into metal for both structure of the single Sn and C vacancies. However, for the double vacancy contained Sn and C atoms, the structure remains semiconductor with the direct band gap of 0.37 eV at the G point. We also found that for anti-site defects, the structure remains semiconductor and for the exchange defect, the structure becomes indirect semiconductor with the K-G point and the band gap of 0.74 eV. Finally, the structure of SW defect remains semiconductor with the direct band gap at K point with band gap of 0.54 eV. Keywords: SnC nanosheets, Density-functional theory, First-principles calculations, Electronic density of states, Band gap

  12. Spatially resolved band alignments at Au-hexadecanethiol monolayer-GaAs(001) interfaces by ballistic electron emission microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Junay, A.; Guézo, S., E-mail: sophie.guezo@univ-rennes1.fr; Turban, P.; Delhaye, G.; Lépine, B.; Tricot, S.; Ababou-Girard, S.; Solal, F. [Département Matériaux-Nanosciences, Institut de Physique de Rennes, UMR 6251, CNRS-Université de Rennes 1, Campus de Beaulieu, Bât 11E, 35042 Rennes Cedex (France)

    2015-08-28

    We study structural and electronic inhomogeneities in Metal—Organic Molecular monoLayer (OML)—semiconductor interfaces at the sub-nanometer scale by means of in situ Ballistic Electron Emission Microscopy (BEEM). BEEM imaging of Au/1-hexadecanethiols/GaAs(001) heterostructures reveals the evolution of pinholes density as a function of the thickness of the metallic top-contact. Using BEEM in spectroscopic mode in non-short-circuited areas, local electronic fingerprints (barrier height values and corresponding spectral weights) reveal a low-energy tunneling regime through the insulating organic monolayer. At higher energies, BEEM evidences new conduction channels, associated with hot-electron injection in the empty molecular orbitals of the OML. Corresponding band diagrams at buried interfaces can be thus locally described. The energy position of GaAs conduction band minimum in the heterostructure is observed to evolve as a function of the thickness of the deposited metal, and coherently with size-dependent electrostatic effects under the molecular patches. Such BEEM analysis provides a quantitative diagnosis on metallic top-contact formation on organic molecular monolayer and appears as a relevant characterization for its optimization.

  13. Electron-tunneling observation of local excited states in manganese-doped indium

    International Nuclear Information System (INIS)

    Tsang, J.; Ginsberg, D.M.

    1980-01-01

    We have measured the electron-tunneling characteristics of a dilute indium-manganese alloy. Well-defined structure was observed, corresponding to a band of local excited states within the energy gap. The measurements were made on two samples, and were quantitatively compared with the theory of Shiba and of Rusinov. We obtained good agreement of the tunneling data with the theory by taking into account only s-wave scattering of conduction electrons from the magnetic-impurity atoms. Even better agreement was obtained by including p- and d-wave scattering. Only by including these higher partial waves could we account for the magnitude of the observed depression of the transition temperature. The phase shifts used are in good agreement with band-theory values calculated recently

  14. Electronic structure of SnS deduced from photoelectron spectra and band-structure calculations

    NARCIS (Netherlands)

    Ettema, A.R.H.F.; Groot, R.A. de; Haas, C.; Turner, T.S.

    1992-01-01

    SnS is a layer compound with a phase transition from a high-temperature β phase to a low-temperature α phase with a lower symmetry. Ab initio band-structure calculations are presented for both phases. The calculations show that the charge distributions in the two phases are very similar. However,

  15. Comprehensive study of electronic polarizability and band gap of B2O3–Bi2O3–ZnO–SiO2 glass network

    Directory of Open Access Journals (Sweden)

    Iskandar Shahrim Mustafa

    2017-10-01

    Full Text Available Quaternary glasses were successfully fabricated using melt quenching technique based on the chemical compound composition (xBi2O3–(0.5−x ZnO–(0.2B2O3–(0.3SiO2, where (x=0.1, 0.2, 0.3, 0.4, 0.45 mole. The sources of SiO2 was produced from rice husk ash (RHA at 99.36% of SiO2. The Urbach energy was increased from 0.16eV to the 0.29eV as the mole of Bi2O3 increased in the glass structure. The indirect energy band gap is indicated in decrement pattern with 3.15eV towards 2.51eV. The results of Urbach energy and band gap energy that were obtained are due to the increment of Bi3+ ion in the glass network. The refractive indexes for the prepared glasses were evaluated at 2.36 to 2.54 based on the Lorentz–Lorentz formulation which correlated to the energy band gap. The calculated of molar polarizability, electronic polarizability and optical basicity exemplify fine complement to the Bi2O3 addition in the glass network. The glass sample was indicated in amorphous state.

  16. Recoil-distance lifetime measurements of the ground-state band in 164Dy, 170Er, and 174Yb

    International Nuclear Information System (INIS)

    Sie, S.H.; Gebbie, D.W.

    1977-06-01

    Mean-lives of the 4 + , 6 + and 8 + levels of the ground-state band in 164 Dy, 170 Er and 174 Yb have been measured by the recoil-distance technique following multiple Coulomb excitation with 32 S projectiles of energy 120-140 MeV. The gamma-rays were detected in coincidence with backscattered particles. The results are compared with theoretical predictions of the adiabatic rotor model. The 6 + and 8 + lifetimes in 164 Dy are found to correspond to a slight reduction in B(E2) values over the rotational model prediction, while for for the 4 + state a 12% reduction was observed. In 170 Er and 174 Yb the lifetimes are consistent with rotational model predictions with a slight enhancement of B(E2) values at higher spins. Comparison with other results from Doppler broadened lineshape analysis confirms the need to adjust the electronic stopping powers of Northcliffe and Schilling in the lineshape calculations. (Author)

  17. Valence band electronic structure of Ho-doped La0.67Ca0.33MnO3 using ultra-violet photoemission spectroscopy

    Science.gov (United States)

    Rout, S. K.; Mukharjee, R. N.; Mishra, D. K.; Roul, B. K.; Sekhar, B. R.; Dalai, M. K.

    2017-05-01

    In this manuscript we report the valence band electronic structure of Ho doped La0.67Ca0.33MnO3 using ultraviolet photoemission spectroscopy. We compared the density of states of La0.67Ca0.33MnO3, La0.67Ca0.3Ho0.03MnO3 and La0.64Ho0.03Ca0.33MnO3 near the Fermi level at various temperatures. Significant amount of changes have been observed at higher temperatures (220 K and 300 K) where the near Fermi level density of states increases with Ho doping into La0.67Ca0.33MnO3 indicating the enhancement of magnitude of change in metallicity (conductivity).

  18. The design study of the high power solid-state amplifier in S-band

    International Nuclear Information System (INIS)

    Tozyo, E.; Kobayashi, K.; Yoshida, K.

    1976-01-01

    We have designed the 500W high power solid-state amplifier for the microwave system of INS electron linac. In this design study the output pulse power level of each module is set as possible as high, so the total number of elements is well reduced within the present microwave technics. In comparison with TWTA highly stabilized and maintenance-free operations are expected with 5 years' MTF. (auth.)

  19. The effect of spin-orbit coupling in band structure and edge states of bilayer graphene

    Energy Technology Data Exchange (ETDEWEB)

    Sahdan, Muhammad Fauzi; Darma, Yudi, E-mail: yudi@fi.itb.ac.id [Department of Physics, InstitutTeknologi Bandung, Jalan Ganesa 10, Bandung 40132 (Indonesia)

    2015-04-16

    Topological insulators are predicted to be useful ranging from spintronics to quantum computation. Graphene was first predicted to be the precursor of topological insulator by Kane-Mele. They developed a Hamiltonian model to describe the gap opening in graphene. In this work, we investigate the band structure of bilayer grapheme and also its edge states by using this model with analytical approach. The results of our calculation show that the gap opening occurs at K and K’ point in bilayer graphene.In addition, a pair of gapless edge modes occurs both in the zigzag and arm-chair configurations are no longer exist. There are gap created at the edge even though thery are very small.

  20. UNITED STATES DEPARTMENT OF TRANSPORTATION GLOBAL POSITIONING SYSTEM (GPS) ADJACENT BAND COMPATIBILITY ASSESSMENT

    Science.gov (United States)

    2018-04-01

    The goal of the U.S. Department of Transportation (DOT) Global Positioning System (GPS) Adjacent Band Compatibility Assessment is to evaluate the maximum transmitted power levels of adjacent band radiofrequency (RF) systems that can be tolerated by G...

  1. CdS_xTe_1_-_x ternary semiconductors band gaps calculation using ground state and GW approximations

    International Nuclear Information System (INIS)

    Kheloufi, Nawal; Bouzid, Abderrazak

    2016-01-01

    We present band gap calculations of zinc-blende ternary CdS_xTe_1_-_x semiconductors within the standard DFT and quasiparticle calculations employing pseudopotential method. The DFT, the local density approximation (LDA) and the Generalized Gradient Approximation (GGA) based calculations have given very poor results compared to experimental data. The quasiparticle calculations have been investigated via the one-shot GW approximation. The present paper discuses and confirms the effect of inclusion of the semicore states in the cadmium (Cd) pseudopotential. The obtained GW quasiparticle band gap using Cd"+"2"0 pseudopotential has been improved compared to the obtained results from the available pseudopotential without the treatment of semicore states. Our DFT and quasiparticle band gap results are discussed and compared to the available theoretical calculations and experimental data. - Graphical abstract: Band gaps improvement concerning the binary and ternary alloys using the GW approximation and Cd"2"0"+ pseudopotential with others levels of approximations (the LDA and GGA approximation employing the Cd"1"2"+ and the LDA within Cd"2"0"+ pseudopotential). - Highlights: • The direct Γ- Γ and indirect Γ- X and Γ- L bands gaps show a nonlinear behavior when S content is enhanced. • The quasiparticle band gap result for the investigated semiconductors is improved using the GW approximation. • All CdS_xTe_1_-_x compounds in all compositions range from 0 to 1 are direct band gap semiconductors.

  2. Band offsets of n-type electron-selective contacts on cuprous oxide (Cu{sub 2}O) for photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Brandt, Riley E., E-mail: rbrandt@alum.mit.edu, E-mail: buonassisi@mit.edu; Lee, Yun Seog; Buonassisi, Tonio, E-mail: rbrandt@alum.mit.edu, E-mail: buonassisi@mit.edu [Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Young, Matthew; Dameron, Arrelaine; Teeter, Glenn [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Park, Helen Hejin; Chua, Danny; Gordon, Roy G. [Harvard University, Cambridge, Massachusetts 02139 (United States)

    2014-12-29

    The development of cuprous oxide (Cu{sub 2}O) photovoltaics (PVs) is limited by low device open-circuit voltages. A strong contributing factor to this underperformance is the conduction-band offset between Cu{sub 2}O and its n-type heterojunction partner or electron-selective contact. In the present work, a broad range of possible n-type materials is surveyed, including ZnO, ZnS, Zn(O,S), (Mg,Zn)O, TiO{sub 2}, CdS, and Ga{sub 2}O{sub 3}. Band offsets are determined through X-ray photoelectron spectroscopy and optical bandgap measurements. A majority of these materials is identified as having a negative conduction-band offset with respect to Cu{sub 2}O; the detrimental impact of this on open-circuit voltage (V{sub OC}) is evaluated through 1-D device simulation. These results suggest that doping density of the n-type material is important as well, and that a poorly optimized heterojunction can easily mask changes in bulk minority carrier lifetime. Promising heterojunction candidates identified here include Zn(O,S) with [S]/[Zn] ratios >70%, and Ga{sub 2}O{sub 3}, which both demonstrate slightly positive conduction-band offsets and high V{sub OC} potential. This experimental protocol and modeling may be generalized to evaluate the efficiency potential of candidate heterojunction partners for other PV absorbers, and the materials identified herein may be promising for other absorbers with low electron affinities.

  3. Solid state effects on the electronic structure of H2OEP.

    Science.gov (United States)

    Marsili, M; Umari, P; Di Santo, G; Caputo, M; Panighel, M; Goldoni, A; Kumar, M; Pedio, M

    2014-12-28

    We present the results of a joint experimental and theoretical investigation concerning the effect of crystal packing on the electronic properties of the H2OEP molecule. Thin films, deposited in ultra high vacuum on metal surfaces, are investigated by combining valence band photoemission, inverse photoemission, and X-ray absorption spectroscopy. The spectra of the films are compared, when possible, with those measured in the gas phase. Once many-body effects are included in the calculations through the GW method, the electronic structure of H2OEP in the film and gas phase are accurately reproduced for both valence and conduction states. Upon going from an isolated molecule to the film phase, the electronic gap shrinks significantly and the lowest unoccupied molecular orbital (LUMO) and LUMO + 1 degeneracy is removed. The calculations show that the reduction of the transport gap in the film is entirely addressable to the enhancement of the electronic screening.

  4. A theoretical analysis of ballistic electron emission microscopy: band structure effects and attenuation lengths

    International Nuclear Information System (INIS)

    Andres, P.L. de; Reuter, K.; Garcia-Vidal, F.J.; Flores, F.; Hohenester, U.; Kocevar, P.

    1998-01-01

    Using quantum mechanical approach, we compute the ballistic electron emission microscopy current distribution in reciprocal space to compare experimental and theoretical spectroscopic I(V) curves. In the elastic limit, this formalism is a 'parameter free' representation of the problem. At low voltages, low temperatures, and for thin metallic layers, the elastic approximation is enough to explain the experiments (ballistic conditions). At low temperatures, inelastic effects can be taken into account approximately by introducing an effective electron-electron lifetime as an imaginary part in the energy. Ensemble Monte Carlo calculations were also performed to obtain ballistic electron emission microscopy currents in good agreement with the previous approach. (author)

  5. All electron ab initio investigations of the electronic states of the FeC molecule

    DEFF Research Database (Denmark)

    Shim, Irene; Gingerich, Karl A.

    1999-01-01

    The low lying electronic states of the molecule FeC have been investigated by performing all electron ab initio multi-configuration self-consistent-field (CASSCF) and multi reference configuration interaction (MRCI) calculations. The relativistic corrections for the one electron Darwin contact term...

  6. All Electron ab initio Investigations of the Electronic States of the MoN Molecule

    DEFF Research Database (Denmark)

    Shim, Irene; Gingerich, Karl A.

    1999-01-01

    The low lying electronic states of the molecule MoN have been investigated by performing all electron ab initio multi-configuration self-consistent-field (CASSCF) calculations. The relativistic corrections for the one electron Darwin contact term and the relativistic mass-velocity correction have...

  7. All-electron ab initio investigations of the electronic states of the NiC molecule

    DEFF Research Database (Denmark)

    Shim, Irene; Gingerich, Karl. A.

    1999-01-01

    The low-lying electronic states of NiC are investigated by all-electron ab initio multi-configuration self-consistent-field (CASSCF) calculations including relativistic corrections. The electronic structure of NiC is interpreted as perturbed antiferromagnetic couplings of the localized angular...

  8. A tapered multi-gap multi-aperture pseudospark-sourced electron gun based X-band slow wave oscillator

    Science.gov (United States)

    Kumar, N.; Lamba, R. P.; Hossain, A. M.; Pal, U. N.; Phelps, A. D. R.; Prakash, R.

    2017-11-01

    The experimental study of a tapered, multi-gap, multi-aperture pseudospark-sourced electron gun based X-band plasma assisted slow wave oscillator is presented. The designed electron gun is based on the pseudospark discharge concept and has been used to generate a high current density and high energy electron beam simultaneously. The distribution of apertures has been arranged such that the field penetration potency inside the backspace of the hollow-cathode is different while passing through the tapered gap region. This leads to non-concurrent ignition of the discharge through all the channels which is, in general, quite challenging in the case of multi-aperture plasma cathode electron gun geometries. Multiple and successive hollow cathode phases are reported from this electron gun geometry, which have been confirmed using simulations. This geometry also has led to the achievement of ˜71% fill factor inside the slow wave oscillator for an electron beam of energy of 20 keV and a beam current density in the range of 115-190 A/cm2 at a working argon gas pressure of 18 Pa. The oscillator has generated broadband microwave output in the frequency range of 10-11.7 GHz with a peak power of ˜10 kW for ˜50 ns.

  9. Electron density measurement for steady state plasmas

    International Nuclear Information System (INIS)

    Kawano, Yasunori; Chiba, Shinichi; Inoue, Akira

    2000-01-01

    Electron density of a large tokamak has been measured successfully by the tangential CO 2 laser polarimeter developed in JT-60U. The tangential Faraday rotation angles of two different wavelength of 9.27 and 10.6 μm provided the electron density independently. Two-color polarimeter concept for elimination of Faraday rotation at vacuum windows is verified for the first time. A system stability for long time operation up to ∼10 hours is confirmed. A fluctuation of a signal baseline is observed with a period of ∼3 hours and an amplitude of 0.4 - 0.7deg. In order to improve the polarimeter, an application of diamond window for reduction of the Faraday rotation at vacuum windows and another two-color polarimeter concept for elimination of mechanical rotation component are proposed. (author)

  10. Optical properties and electronic band structure of AgInSe2

    International Nuclear Information System (INIS)

    Ozaki, Shunji; Adachi, Sadao

    2006-01-01

    Optical properties of a chalcopyrite semiconductor AgInSe 2 have been studied by optical absorption, spectroscopic ellipsometry (SE), and thermoreflectance (TR) measurements. The measurements reveal distinct structures at energies of the critical points in the Brillouin zone. By performing the band-structure calculation, these critical points have been successfully assigned to specific points in the Brillouin zone. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2006], Wiley Periodicals, Inc.)

  11. Electron band bending of polar, semipolar and non-polar GaN surfaces

    Czech Academy of Sciences Publication Activity Database

    Bartoš, Igor; Romanyuk, Olexandr; Houdková, Jana; Paskov, P.P.; Paskova, T.; Jiříček, Petr

    2016-01-01

    Roč. 119, č. 10 (2016), 1-7, č. článku 105303. ISSN 0021-8979 R&D Projects: GA ČR GA15-01687S Grant - others:AVČR(CZ) M100101201 Institutional support: RVO:68378271 Keywords : GaN * XPS * band bending Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.068, year: 2016

  12. Coral transcriptome and bacterial community profiles reveal distinct Yellow Band Disease states in Orbicella faveolata

    KAUST Repository

    Closek, Collin J.

    2014-06-20

    Coral diseases impact reefs globally. Although we continue to describe diseases, little is known about the etiology or progression of even the most common cases. To examine a spectrum of coral health and determine factors of disease progression we examined Orbicella faveolata exhibiting signs of Yellow Band Disease (YBD), a widespread condition in the Caribbean. We used a novel combined approach to assess three members of the coral holobiont: the coral-host, associated Symbiodinium algae, and bacteria. We profiled three conditions: (1) healthy-appearing colonies (HH), (2) healthy-appearing tissue on diseased colonies (HD), and (3) diseased lesion (DD). Restriction fragment length polymorphism analysis revealed health state-specific diversity in Symbiodinium clade associations. 16S ribosomal RNA gene microarrays (PhyloChips) and O. faveolata complimentary DNA microarrays revealed the bacterial community structure and host transcriptional response, respectively. A distinct bacterial community structure marked each health state. Diseased samples were associated with two to three times more bacterial diversity. HD samples had the highest bacterial richness, which included components associated with HH and DD, as well as additional unique families. The host transcriptome under YBD revealed a reduced cellular expression of defense- and metabolism-related processes, while the neighboring HD condition exhibited an intermediate expression profile. Although HD tissue appeared visibly healthy, the microbial communities and gene expression profiles were distinct. HD should be regarded as an additional (intermediate) state of disease, which is important for understanding the progression of YBD. © 2014 International Society for Microbial Ecology. All rights reserved.

  13. Electron beam and rf characterization of a low-emittance X-band photoinjector

    Directory of Open Access Journals (Sweden)

    D. J. Gibson

    2001-09-01

    Full Text Available Detailed experimental studies of the first operation of an X-band (8.547 GHz rf photoinjector are reported. The rf characteristics of the device are first described, as well as the tuning technique used to ensure operation of the 11/2-cell rf gun in the balanced π-mode. The characterization of the photoelectron beam produced by the rf gun includes: measurements of the bunch charge as a function of the laser injection phase, yielding information about the quantum efficiency of the Cu photocathode ( 2×10^{-5} for a surface field of 100 MV/m; measurements of the beam energy (1.5–2 MeV and relative energy spread ( Δγ/γ_{0}=1.8±0.2% using a magnetic spectrometer; measurements of the beam 90% normalized emittance, which is found to be ɛ_{n}=1.65π mm mrad for a charge of 25 pC; and measurements of the bunch duration ( <2 ps. Coherent synchrotron radiation experiments at Ku-band and Ka-band confirm the extremely short duration of the photoelectron bunch and a peak power scaling quadratically with the bunch charge.

  14. Phase stability, electronic structure and equation of state of cubic TcN from first-principles calculations

    International Nuclear Information System (INIS)

    Song, T.; Ma, Q.; Sun, X.W.; Liu, Z.J.; Fu, Z.J.; Wei, X.P.; Wang, T.; Tian, J.H.

    2016-01-01

    The phase transition, electronic band structure, and equation of state (EOS) of cubic TcN are investigated by first-principles pseudopotential method based on density-functional theory. The calculated enthalpies show that TcN has a transformation between zincblende and rocksalt phases and the pressure determined by the relative enthalpy is 32 GPa. The calculated band structure indicates the metallic feature and it might make cubic TcN a better candidate for hard materials. Particular attention is paid to the predictions of volume, bulk modulus and its pressure derivative which play a central role in the formulation of approximate EOSs using the quasi-harmonic Debye model. - Highlights: • The phase transition pressure and electronic band structure for cubic TcN are determined. • Particular attention is paid to investigate the equation of state parameters for cubic TcN. • The thermodynamic properties up to 80 GPa and 3000 K are successfully predicted.

  15. Electronic structure of the misfit layer compound (SnS)(1.20)TiS2 : Band structure calculations and photoelectron spectra

    NARCIS (Netherlands)

    Fang, CM; deGroot, RA; Wiegers, GA; Haas, C

    1996-01-01

    In order to understand the electronic structure of the incommensurate misfit layer compound (SnS)(1.20)TiS2 we carried out an ab initio band structure calculation in the supercell approximation. The band structure is compared with that of the components 1T-TiS2 and hypothetical SnS with a similar

  16. Electronic structure of the misfit layer compound (SnS)1.20TiS2 : band structure calculations and photoelectron spectra

    NARCIS (Netherlands)

    Fang, C.M.; Groot, R.A. de; Wiegers, G.A.; Haas, C.

    1996-01-01

    In order to understand the electronic structure of the incommensurate misfit layer compound (SnS)1.20TiS2 we carried out an ab initio band structure calculation in the supercell approximation. The band structure is compared with that of the components 1T-TiS2 and hypothetical SnS with a similar

  17. Direct conversion of graphite into diamond through electronic excited states

    CERN Document Server

    Nakayama, H

    2003-01-01

    An ab initio total energy calculation has been performed for electronic excited states in diamond and rhombohedral graphite by the full-potential linearized augmented plane wave method within the framework of the local density approximation (LDA). First, calculations for the core-excited state in diamond have been performed to show that the ab initio calculations based on the LDA describe the wavefunctions in the electronic excited states as well as in the ground state quite well. Fairly good coincidence with both experimental data and theoretical prediction has been obtained for the lattice relaxation of the core exciton state. The results of the core exciton state are compared with nitrogen-doped diamond. Next, the structural stability of rhombohedral graphite has been investigated to examine the possibility of the transition into the diamond structure through electronic excited states. While maintaining the rhombohedral symmetry, rhombohedral graphite can be spontaneously transformed to cubic diamond. Tota...

  18. First principles study of the electronic properties and band gap modulation of two-dimensional phosphorene monolayer: Effect of strain engineering

    Science.gov (United States)

    Phuc, Huynh V.; Hieu, Nguyen N.; Ilyasov, Victor V.; Phuong, Le T. T.; Nguyen, Chuong V.

    2018-06-01

    The effect of strain on the structural and electronic properties of monolayer phosphorene is studied by using first-principle calculations based on the density functional theory. The intra- and inter-bond length and bond angle for monolayer phosphorene is also evaluated. The intra- and inter-bond length and the bond angle for phosphorene show an opposite tendency under different directions of the applied strain. At the equilibrium state, monolayer phosphorene is a semiconductor with a direct band gap at the Γ-point of 0.91 eV. A direct-indirect band gap transition is found in monolayer phosphorene when both the compression and tensile strain are simultaneously applied along both zigzag and armchair directions. Under the applied compression strain, a semiconductor-metal transition for monolayer phosphorene is observed at -13% and -10% along armchair and zigzag direction, respectively. The direct-indirect and phase transition will largely constrain application of monolayer phosphorene to electronic and optical devices.

  19. Resting-state theta band connectivity and graph analysis in generalized social anxiety disorder.

    Science.gov (United States)

    Xing, Mengqi; Tadayonnejad, Reza; MacNamara, Annmarie; Ajilore, Olusola; DiGangi, Julia; Phan, K Luan; Leow, Alex; Klumpp, Heide

    2017-01-01

    Functional magnetic resonance imaging (fMRI) resting-state studies show generalized social anxiety disorder (gSAD) is associated with disturbances in networks involved in emotion regulation, emotion processing, and perceptual functions, suggesting a network framework is integral to elucidating the pathophysiology of gSAD. However, fMRI does not measure the fast dynamic interconnections of functional networks. Therefore, we examined whole-brain functional connectomics with electroencephalogram (EEG) during resting-state. Resting-state EEG data was recorded for 32 patients with gSAD and 32 demographically-matched healthy controls (HC). Sensor-level connectivity analysis was applied on EEG data by using Weighted Phase Lag Index (WPLI) and graph analysis based on WPLI was used to determine clustering coefficient and characteristic path length to estimate local integration and global segregation of networks. WPLI results showed increased oscillatory midline coherence in the theta frequency band indicating higher connectivity in the gSAD relative to HC group during rest. Additionally, WPLI values positively correlated with state anxiety levels within the gSAD group but not the HC group. Our graph theory based connectomics analysis demonstrated increased clustering coefficient and decreased characteristic path length in theta-based whole brain functional organization in subjects with gSAD compared to HC. Theta-dependent interconnectivity was associated with state anxiety in gSAD and an increase in information processing efficiency in gSAD (compared to controls). Results may represent enhanced baseline self-focused attention, which is consistent with cognitive models of gSAD and fMRI studies implicating emotion dysregulation and disturbances in task negative networks (e.g., default mode network) in gSAD.

  20. Observation of coherently enhanced tunable narrow-band terahertz transition radiation from a relativistic sub-picosecond electron bunch train

    International Nuclear Information System (INIS)

    Piot, P.; Maxwell, T. J.; Sun, Y.-E; Ruan, J.; Lumpkin, A. H.; Thurman-Keup, R.; Rihaoui, M. M.

    2011-01-01

    We experimentally demonstrate the production of narrow-band (δf/f≅20% at f≅0.5THz) transition radiation with tunable frequency over [0.37, 0.86] THz. The radiation is produced as a train of sub-picosecond relativistic electron bunches transits at the vacuum-aluminum interface of an aluminum converter screen. The bunch train is generated via a transverse-to-longitudinal phase space exchange technique. We also show a possible application of modulated beams to extend the dynamical range of a popular bunch length diagnostic technique based on the spectral analysis of coherent radiation.

  1. Elucidation of electronic structure by the analysis of hyperfine interactions: The MnH A 7Π-X 7Sigma + (0,0) band

    Science.gov (United States)

    Varberg, Thomas D.; Field, Robert W.; Merer, Anthony J.

    1991-08-01

    We present a complete analysis of the hyperfine structure of the MnH A 7Π-X 7Σ+ (0,0) band near 5680 Å, studied with sub-Doppler resolution by intermodulated fluorescence spectroscopy. Magnetic hyperfine interactions involving both the 55Mn (I=5/2) and 1H (I=1/2) nuclear spins are observed as well as 55Mn electric quadrupole effects. The manganese Fermi contact interaction in the X 7Σ+ state is the dominant contributor to the observed hyperfine splittings; the ΔF=0, ΔN=0, ΔJ=±1 matrix elements of this interaction mix the electron spin components of the ground state quite strongly at low N, destroying the ``goodness'' of J as a quantum number and inducing rotationally forbidden, ΔJ=±2 and ±3 transitions. The hyperfine splittings of over 50 rotational transitions covering all 7 spin components of both states were analyzed and fitted by least squares, allowing the accurate determination of 14 different hyperfine parameters. Using single electronic configurations to describe the A 7Π and X 7Σ+ states and Herman-Skillman atomic radial wave functions to represent the molecular orbitals, we calculated a priori values for the 55Mn and 1H hyperfine parameters which agree closely with experiment. We show that the five high-spin coupled Mn 3d electrons do not contribute to the manganese hyperfine structure but are responsible for the observed proton magnetic dipolar couplings. Furthermore, the results suggest that the Mn 3d electrons are not significantly involved in bonding and demonstrate that the molecular hyperfine interactions may be quantitatively understood using simple physical interpretations.

  2. First-principles determination of band-to-band electronic transition energies in cubic and hexagonal AlGaInN alloys

    Directory of Open Access Journals (Sweden)

    F. L. Freitas

    2016-08-01

    Full Text Available We provide approximate quasiparticle-corrected band gap energies for quaternary cubic and hexagonal AlxGayIn1–x–yN semiconductor alloys, employing a cluster expansion method to account for the inherent statistical disorder of the system. Calculated values are compared with photoluminescence measurements and discussed within the currently accepted model of emission in these materials by carrier localization. It is shown that bowing parameters are larger in the cubic phase, while the range of band gap variation is bigger in the hexagonal one. Experimentally determined transition energies are mostly consistent with band-to-band excitations.

  3. First-principles determination of band-to-band electronic transition energies in cubic and hexagonal AlGaInN alloys

    Energy Technology Data Exchange (ETDEWEB)

    Freitas, F. L., E-mail: felipelopesfreitas@gmail.com; Marques, M.; Teles, L. K. [Grupo de Materiais Semicondutores e Nanotecnologia, Instituto Tecnológico de Aeronáutica, 12228-900 São José dos Campos, SP (Brazil)

    2016-08-15

    We provide approximate quasiparticle-corrected band gap energies for quaternary cubic and hexagonal Al{sub x}Ga{sub y}In{sub 1–x–y}N semiconductor alloys, employing a cluster expansion method to account for the inherent statistical disorder of the system. Calculated values are compared with photoluminescence measurements and discussed within the currently accepted model of emission in these materials by carrier localization. It is shown that bowing parameters are larger in the cubic phase, while the range of band gap variation is bigger in the hexagonal one. Experimentally determined transition energies are mostly consistent with band-to-band excitations.

  4. Photo-Induced Electron Spin Polarization in a Narrow Band Gap Semiconductor Nanostructure

    International Nuclear Information System (INIS)

    Peter, A. John; Lee, Chang Woo

    2012-01-01

    Photo-induced spin dependent electron transmission through a narrow gap InSb/InGa x Sb 1−x semiconductor symmetric well is theoretically studied using transfer matrix formulism. The transparency of electron transmission is calculated as a function of electron energy for different concentrations of gallium. Enhanced spin-polarized photon assisted resonant tunnelling in the heterostructure due to Dresselhaus and Rashba spin-orbit coupling induced splitting of the resonant level and compressed spin-polarization are observed. Our results show that Dresselhaus spin-orbit coupling is dominant for the photon effect and the computed polarization efficiency increases with the photon effect and the gallium concentration

  5. Design study of an S-band RF cavity of a dual-energy electron LINAC for the CIS

    Science.gov (United States)

    Lee, Byeong-No; Park, Hyungdal; Song, Ki-baek; Li, Yonggui; Lee, Byung Cheol; Cha, Sung-su; Lee, Jong-Chul; Shin, Seung-Wook; Chai, Jong-seo

    2014-01-01

    The design of a resonance frequency (RF) cavity for the dual-energy S-band electron linear accelerator (LINAC) has been carried out for the cargo inspection system (CIS). This Standing-wave-type RF cavity is operated at a frequency under the 2856-MHz resonance frequency and generates electron beams of 9 MeV (high mode) and 6 MeV (low mode). The electrons are accelerated from the initial energy of the electron gun to the target energy (9 or 6 MeV) inside the RF cavity by using the RF power transmitted from a 5.5-MW-class klystron. Then, electron beams with a 1-kW average power (both high mode and low mode) bombard an X-ray target a 2-mm spot size. The proposed accelerating gradient was 13 MV/m, and the designed Q value was about 7100. On going research on 15-MeV non-destructive inspections for military or other applications is presented.

  6. Electronic absorption bands of HoCl3 and SmCl3 complexes in alcohols

    International Nuclear Information System (INIS)

    Ramesh Babu, V.; Buddhudu, S.; Rangarajan, V.N.

    1987-01-01

    The normal absorption and second derivative spectra of ten alcoholic complexes of HoCl 3 and SmCl 3 were recorded. From the observed bands, energies and intensity values were measured. To fit in these measured values with the theoretical values, a set of spectroscopic parameters namely, Judd-Ofelt (T 2 , T 4 , T 6 ), intensity (Ω 2 , Ω 4 , Ω 6 ) had been computed. A good fit of intensities was obtained between the experimental and theoretical data. The environmental influences on the intensities of the hypersensitive transitions of Sm(III) and Ho(III) ions were found to be noteworthy. (author). 7 tables, 20 refs

  7. Visualizing band offsets and edge states in bilayer–monolayer transition metal dichalcogenides lateral heterojunction

    KAUST Repository

    Zhang, Chendong

    2016-01-18

    Semiconductor heterostructures are fundamental building blocks for many important device applications. The emergence of two-dimensional semiconductors opens up a new realm for creating heterostructures. As the bandgaps of transition metal dichalcogenides thin films have sensitive layer dependence, it is natural to create lateral heterojunctions (HJs) using the same materials with different thicknesses. Here we show the real space image of electronic structures across the bilayer–monolayer interface in MoSe2 and WSe2, using scanning tunnelling microscopy and spectroscopy. Most bilayer–monolayer HJs are found to have a zig-zag-orientated interface, and the band alignment of such atomically sharp HJs is of type-I with a well-defined interface mode that acts as a narrower-gap quantum wire. The ability to utilize such commonly existing thickness terraces as lateral HJs is a crucial addition to the tool set for device applications based on atomically thin transition metal dichalcogenides, with the advantage of easy and flexible implementation.

  8. Multi-band tight-binding calculation of electronic transport in Fe/trans-polyacetylene/Fe tunnel junctions

    International Nuclear Information System (INIS)

    Abedi Ravan, B

    2012-01-01

    In this paper, the electronic transport characteristics of Fe/trans-polyacetylene/Fe magnetic tunnel junctions (MTJs) are investigated using multi-band tight-binding calculations within the framework of nonequilibrium Green function theory. A CH 2 radical is added to different positions on the polymer chain and its effects on the tunnelling magnetoresistance of the MTJ are studied. The ferromagnetic electrodes are assumed to be single-band and their tight-binding parameters are chosen in such a way as to simulate the ab initio density functional calculations of the band structure of bcc-Fe along its [001] crystallographic direction. In building the Hamiltonian of the trans-polyacetylene (t-PA) chain, we have assumed an s orbital on the H atoms and one s and three p(p x ,p y ,p z ) orbitals on the C atoms, and the dimerization effects are taken into account. It is found that moving the radical out of the centre of the polymer chain enhances the tunnelling magnetoresistance of the MTJ.

  9. Dynamical electron-phonon coupling, G W self-consistency, and vertex effect on the electronic band gap of ice and liquid water

    Science.gov (United States)

    Ziaei, Vafa; Bredow, Thomas

    2017-06-01

    We study the impact of dynamical electron-phonon (el-ph) effects on the electronic band gap of ice and liquid water by accounting for frequency-dependent Fan contributions in the el-ph mediated self-energy within the many-body perturbation theory (MBPT). We find that the dynamical el-ph coupling effects greatly reduce the static el-ph band-gap correction of the hydrogen-rich molecular ice crystal from-2.46 to -0.23 eV in great contrast to the result of Monserrat et al. [Phys. Rev. B 92, 140302 (2015), 10.1103/PhysRevB.92.140302]. This is of particular importance as otherwise the static el-ph gap correction would considerably reduce the electronic band gap, leading to considerable underestimation of the intense peaks of optical absorption spectra of ice which would be in great disagreement to experimental references. By contrast, the static el-ph gap correction of liquid water is very moderate (-0.32 eV), and inclusion of dynamical effects slightly reduces the gap correction to -0.19 eV. Further, we determine the diverse sensitivity of ice and liquid water to the G W self-consistency and show that the energy-only self-consistent approach (GnWn ) exhibits large implicit vertex character in comparison to the quasiparticle self-consistent approach, for which an explicit calculation of vertex corrections is necessary for good agreement with experiment.

  10. The sensitivity of the electron transport within bulk zinc-blende gallium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient associated with the lowest energy conduction band valley

    Energy Technology Data Exchange (ETDEWEB)

    Siddiqua, Poppy; O' Leary, Stephen K., E-mail: stephen.oleary@ubc.ca [School of Engineering, The University of British Columbia, 3333 University Way, Kelowna, British Columbia V1V 1V7 (Canada)

    2016-09-07

    Within the framework of a semi-classical three-valley Monte Carlo simulation approach, we analyze the steady-state and transient electron transport that occurs within bulk zinc-blende gallium nitride. In particular, we examine how the steady-state and transient electron transport that occurs within this material changes in response to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient associated with the lowest energy conduction band valley. These results are then contrasted with those corresponding to a number of other compound semiconductors of interest.

  11. Equilibrium state of colliding electron beams

    Directory of Open Access Journals (Sweden)

    R. L. Warnock

    2003-10-01

    Full Text Available We study a nonlinear integral equation that is a necessary condition on the equilibrium phase-space distribution function of stored, colliding electron beams. It is analogous to the Haïssinski equation, being derived from Vlasov-Fokker-Planck theory, but is quite different in form. The equation is analyzed for the case of the Chao-Ruth model of the beam-beam interaction in 1 degree of freedom, a so-called strong-strong model with nonlinear beam-beam force. We prove the existence of a unique solution, for sufficiently small beam current, by an application of the implicit function theorem. We have not yet proved that this solution is positive, as would be required to establish existence of an equilibrium. There is, however, numerical evidence of a positive solution. We expect that our analysis can be extended to more realistic models.

  12. Effect of suprathermal electrons on the impurity ionization state

    International Nuclear Information System (INIS)

    Ochando, M A; Medina, F; Zurro, B; McCarthy, K J; Pedrosa, M A; Baciero, A; Rapisarda, D; Carmona, J M; Jimenez, D

    2006-01-01

    The effect of electron cyclotron resonance heating induced suprathermal electron tails on the ionization of iron impurities in magnetically confined plasmas is investigated. The behaviour of plasma emissivity immediately after injection provides evidence of a spatially localized 'shift' towards higher charge states of the impurity. Bearing in mind that the non-inductive plasma heating methods generate long lasting non-Maxwellian distribution functions, possible implications on the deduced impurity transport coefficients, when fast electrons are present, are discussed

  13. Electron beam melting state-of-the-art 1984

    International Nuclear Information System (INIS)

    Bakish, R.

    1984-01-01

    In 1984 electron beam melting and refining appear poised for an important new growth phase. The driving force for this phase is improved production economics made possible by technological advances. There is also a new and exciting growth application for electron beam melting: its use for surface properties beneficiation. This article is based in part on the content of the Conference on Electron Beam Melting and Refining, The State-of-the-Art 1983, held in November 1983 in Reno, Nevada

  14. Ab initio electronic band structure calculation of InP in the wurtzite phase

    Science.gov (United States)

    Dacal, Luis C. O.; Cantarero, Andrés

    2011-05-01

    We present ab initio calculations of the InP band structure in the wurtzite phase and compare it with that of the zincblende phase. In both calculations, we use the full potential linearized augmented plane wave method as implemented in the WIEN2k code and the modified Becke-Johnson exchange potential, which provides an improved value of the bandgap. The structural optimization of the wurtizte InP gives a=0.4150 nm, c=0.6912 nm, and an internal parameter u=0.371, showing the existence of a spontaneous polarization along the growth axis. As compared to the ideal wurtzite structure (that with the lattice parameter derived from the zincblende structure calculations), the actual wurtzite structure is compressed (-1.3%) in plane and expanded (0.7%) along the c-direction. The value of the calculated band gaps agrees well with recent optical experiments. The calculations are also consistent with the optical transitions found using polarized light.

  15. Attosecond electron pulse trains and quantum state reconstruction in ultrafast transmission electron microscopy

    Science.gov (United States)

    Priebe, Katharina E.; Rathje, Christopher; Yalunin, Sergey V.; Hohage, Thorsten; Feist, Armin; Schäfer, Sascha; Ropers, Claus

    2017-12-01

    Ultrafast electron and X-ray imaging and spectroscopy are the basis for an ongoing revolution in the understanding of dynamical atomic-scale processes in matter. The underlying technology relies heavily on laser science for the generation and characterization of ever shorter pulses. Recent findings suggest that ultrafast electron microscopy with attosecond-structured wavefunctions may be feasible. However, such future technologies call for means to both prepare and fully analyse the corresponding free-electron quantum states. Here, we introduce a framework for the preparation, coherent manipulation and characterization of free-electron quantum states, experimentally demonstrating attosecond electron pulse trains. Phase-locked optical fields coherently control the electron wavefunction along the beam direction. We establish a new variant of quantum state tomography—`SQUIRRELS'—for free-electron ensembles. The ability to tailor and quantitatively map electron quantum states will promote the nanoscale study of electron-matter entanglement and new forms of ultrafast electron microscopy down to the attosecond regime.

  16. Reconstructing the energy band electronic structure of pulsed laser deposited CZTS thin films intended for solar cell absorber applications

    Energy Technology Data Exchange (ETDEWEB)

    Pandiyan, Rajesh [Institut National de la Recherche Scientifique, Centre-Énergie, Matériaux et Télécommunications, 1650 Blvd. Lionel–Boulet, C.P. 1020, Varennes, QC J3X-1S2 (Canada); Oulad Elhmaidi, Zakaria [Institut National de la Recherche Scientifique, Centre-Énergie, Matériaux et Télécommunications, 1650 Blvd. Lionel–Boulet, C.P. 1020, Varennes, QC J3X-1S2 (Canada); University of Mohammed V, Faculty of Sciences, Materials Physics Laboratory, B.P. 1014 Rabat (Morocco); Sekkat, Zouheir [Optics & Photonics Center, Moroccan Foundation for Advanced Science, Innovation and Research, Rabat (Morocco); Abd-lefdil, Mohammed [University of Mohammed V, Faculty of Sciences, Materials Physics Laboratory, B.P. 1014 Rabat (Morocco); El Khakani, My Ali, E-mail: elkhakani@emt.inrs.ca [Institut National de la Recherche Scientifique, Centre-Énergie, Matériaux et Télécommunications, 1650 Blvd. Lionel–Boulet, C.P. 1020, Varennes, QC J3X-1S2 (Canada)

    2017-02-28

    Highlights: • High quality CZTS thin films grown by means of PLD technique without resorting to any post sulfurization process. • Effect of thermal annealing treatments (in the 200–500 °C range) on the structural, morphological and optoelectronic properties of PLD-CZTS films. • Experimental determination of key optoelectronic parameters (i.e.; E{sub g}, VBM, ϕ, I{sub p}, and χ) enabling the reconstruction of energy band electronic structure of the PLD-CZTS films. • Investigation on the energy band alignments of the heterojunction interface formed between CZTS and both CdS and ZnS buffer layer materials. - Abstract: We report here on the use of pulsed KrF-laser deposition (PLD) technique for the growth of high-quality Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films onto Si, and glass substrates without resorting to any post sulfurization process. The PLD-CZTS films were deposited at room temperature (RT) and then subjected to post annealing at different temperatures ranging from 200 to 500 °C in Argon atmosphere. The X-ray diffraction and Raman spectroscopy confirmed that the PLD films crystallize in the characteristic kesterite CZTS structure regardless of their annealing temperature (T{sub a}), but their crystallinity is much improved for T{sub a} ≥ 400 °C. The PLD-CZTS films were found to exhibit a relatively dense morphology with a surface roughness (RMS) that increases with T{sub a} (from ∼14 nm at RT to 70 nm at T{sub a} = 500 °C with a value around 40 nm for T{sub a} = 300–400 °C). The optical bandgap of the PLD-CZTS films, was derived from UV–vis transmission spectra analysis, and found to decrease from 1.73 eV for non-annealed films to ∼1.58 eV for those annealed at T{sub a} = 300 °C. These band gap values are very close to the optimum value needed for an ideal solar cell absorber. In order to achieve a complete reconstruction of the one-dimensional energy band structure of these PLD-CZTS absorbers, we have combined both XPS and UPS

  17. Molecular electronics with single molecules in solid-state devices

    DEFF Research Database (Denmark)

    Moth-Poulsen, Kasper; Bjørnholm, Thomas

    2009-01-01

    The ultimate aim of molecular electronics is to understand and master single-molecule devices. Based on the latest results on electron transport in single molecules in solid-state devices, we focus here on new insights into the influence of metal electrodes on the energy spectrum of the molecule...

  18. Study of some electronics properties of new superconductor Sr2VO3FeAs in ground state

    Directory of Open Access Journals (Sweden)

    M Majidiyan

    2010-09-01

    Full Text Available In this paper, some electronics properties of new superconductor Sr2VO3FeAs, such as density of states, band structure, density of electron cloud and bound lengths in the ground state have been calculated. According to N(Ef in ground state CV/T value has been estimated. The calculations were performed in the framework of density functional theory (DFT, using the full potential linearized augmented plane wave (FP-LAPW method with the general gradient approximation (GGA.

  19. D-state Rydberg electrons interacting with ultracold atoms

    Energy Technology Data Exchange (ETDEWEB)

    Krupp, Alexander Thorsten

    2014-10-02

    This thesis was established in the field of ultracold atoms where the interaction of highly excited D-state electrons with rubidium atoms was examined. This work is divided into two main parts: In the first part we study D-state Rydberg molecules resulting from the binding of a D-state Rydberg electron to a ground state rubidium atom. We show that we can address specific rovibrational molecular states by changing our laser detuning and thus create perfectly aligned axial or antialigned toroidal molecules, in good agreement with our theoretical calculations. Furthermore the influence of the electric field on the Rydberg molecules was investigated, creating novel states which show a different angular dependence and alignment. In the second part of this thesis we excite single D-state Rydberg electrons in a Bose-Einstein condensate. We study the lifetime of these Rydberg electrons, the change of the shape of our condensate and the atom losses in the condensate due to this process. Moreover, we observe quadrupolar shape oscillations of the whole condensate created by the consecutive excitation of Rydberg atoms and compare all results to previous S-state measurements. In the outlook we propose a wide range of further experiments including the proposal of imaging a single electron wavefunction by the imprint of its orbit into the Bose-Einstein condensate.

  20. First excited states in doubly-odd 110Sb: Smooth band termination in the A ∼ 110 region

    International Nuclear Information System (INIS)

    Lane, G.J.; Fossan, D.B.; Thorslund, I.

    1996-01-01

    Excited states have been identified for the first time in 110 Sb in a comprehensive series of γ-spectroscopy experiments, including recoil-mass and neutron-field measurements. Three high-spin decoupled bands with configurations based on 2p-2h excitations across the Z = 50 shell gap, are observed to show the features of smooth band termination, the first such observation in an odd-odd nucleus. The yrast intruder band has been connected to the low spin levels and is tentatively identified up to its predicred termination at I π = (45 + ). Detailed configuration assignments are made through comparison with configuration-dependent cranked Nilsson-Strutinsky calculations; excellent agreement with experiment is obtained. The systematic occurrence of smoothly terminating bands in the neighboring isotopes is discussed

  1. Interfacial chemical bonding state and band alignment of CaF2/hydrogen-terminated diamond heterojunction

    International Nuclear Information System (INIS)

    Liu, J. W.; Liao, M. Y.; Cheng, S. H.; Imura, M.; Koide, Y.

    2013-01-01

    CaF 2 films are deposited on hydrogen-terminated diamond (H-diamond) by a radio-frequency sputter-deposition technique at room temperature. Interfacial chemical bonding state and band alignment of CaF 2 /H-diamond heterojunction are investigated by X-ray photoelectron spectroscopy. It is confirmed that there are only C-Ca bonds at the CaF 2 /H-diamond heterointerface. Valence and conductance band offsets of the CaF 2 /H-diamond heterojunciton are determined to be 3.7 ± 0.2 and 0.3 ± 0.2 eV, respectively. It shows a type I straddling band configuration. The large valence band offset suggests advantage of the CaF 2 /H-diamond heterojunciton for the development of high power and high frequency field effect transistors.

  2. An all-silicon laser by coupling between electronic localized states and defect states of photonic crystal

    Energy Technology Data Exchange (ETDEWEB)

    Huang Weiqi, E-mail: WQHuang2001@yahoo.com [Institute of Nanophotonic Physics, Key Laboratory of Photoelectron Technology and Application, Guizhou University, Guiyang 550025 (China); Huang Zhongmei; Miao Xinjiang; Cai Chenlan; Liu Jiaxin; Lue Quan [Institute of Nanophotonic Physics, Key Laboratory of Photoelectron Technology and Application, Guizhou University, Guiyang 550025 (China); Liu Shirong, E-mail: Shirong@yahoo.com [State Key Laboratory of Ore Deposit Geochemistry Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550003 (China); Qin Chaojian [State Key Laboratory of Ore Deposit Geochemistry Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550003 (China)

    2012-01-15

    In a nano-laser of Si quantum dots (QD), the smaller QD fabricated by nanosecond pulse laser can form the pumping level tuned by the quantum confinement (QC) effect. Coupling between the active centers formed by localized states of surface bonds and the two-dimensional (2D) photonic crystal is used to select model in the nano-laser. The experimental demonstration is reported in which the peaks of stimulated emission at about 600 nm and 700 nm were observed on the Si QD prepared in oxygen after annealing which improves the stimulated emission. It is interesting to make a comparison between the localized electronic states in gap due to defect formed by surface bonds and the localized photonic states in gap of photonic band due to defect of 2D photonic crystal.

  3. Tuning of electronic band gaps and optoelectronic properties of binary strontium chalcogenides by means of doping of magnesium atom(s)- a first principles based theoretical initiative with mBJ, B3LYP and WC-GGA functionals

    Science.gov (United States)

    Debnath, Bimal; Sarkar, Utpal; Debbarma, Manish; Bhattacharjee, Rahul; Chattopadhyaya, Surya

    2018-02-01

    First principle based theoretical initiative is taken to tune the optoelectronic properties of binary strontium chalcogenide semiconductors by doping magnesium atom(s) into their rock-salt unit cells at specific concentrations x = 0.0, 0.25, 0.50, 0.75 and 1.0 and such tuning is established by studying structural, electronic and optical properties of designed binary compounds and ternary alloys employing WC-GGA, B3LYP and mBJ exchange-correlation functionals. Band structure of each compound is constructed and respective band gaps under all the potential schemes are measured. The band gap bowing and its microscopic origin are calculated using quadratic fit and Zunger's approach, respectively. The atomic and orbital origins of electronic states in the band structure of any compound are explored from its density of states. The nature of chemical bonds between the constituent atoms in each compound is explored from the valence electron density contour plots. Optical properties of any specimen are explored from the computed spectra of its dielectric function, refractive index, extinction coefficient, normal incidence reflectivity, optical conductivity optical absorption and energy loss function. Several calculated results are compared with available experimental and earlier theoretical data.

  4. First-principles study of spin-polarized electronic band structures in ferromagnetic Zn1-xTMxS (TM = Fe, Co and Ni)

    KAUST Repository

    Saeed, Yasir

    2010-10-01

    We report a first-principles study of structural, electronic and magnetic properties of crystalline alloys Zn1-xTMxS (TM = Fe, Co and Ni) at x = 0.25. Structural properties are computed from the total ground state energy convergence and it is found that the cohesive energies of Zn 1-xTMxS are greater than that of zincblende ZnS. We also study the spin-polarized electronic band structures, total and partial density of states and the effect of TM 3d states. Our results exhibit that Zn 0.75Fe0.25S, Zn0.75Co0.25S and Zn0.75Ni0.25S are half-metallic ferromagnetic with a magnetic moment of 4μB, 3μB and 2μB, respectively. Furthermore, we calculate the TM 3d spin-exchange-splitting energies Δx (d), Δx (x-d), exchange constants N0α and N0β, crystal field splitting (ΔEcrystEt2g-Eeg), and find that p-d hybridization reduces the local magnetic moment of TM from its free space charge value. Moreover, robustness of Zn1-xTMxS with respect to the variation of lattice constants is also discussed. © 2010 Elsevier B.V. All rights reserved.

  5. Localized electronic states: the small radius potential approximation

    International Nuclear Information System (INIS)

    Steslicka, M.; Jurczyszyn, L.

    1984-09-01

    Using a quasi three-dimensional crystal model we investigate the localized electronic states, generated by the crystal surface covered by foreign atoms. Two such states are found in the first forbidden energy gap and, because of their localization properties, called the Tamm-like and adsorption-like states. Using the small radius potential approximation, the properties of both types of states were discussed in detail. (author)

  6. Inelastic plasmon and inter-band electron-scattering potentials for Si from dielectric matrix calculations

    International Nuclear Information System (INIS)

    Josefsson, T.W.; Smith, A.E.

    1994-01-01

    Inelastic scattering of electrons in a crystalline environment may be represented by a complex non-hermitian potential. Completed generalised expressions for this inelastic electron scattering potential matrix, including virtual inelastic scattering, are derived for outer-shell electron and plasmon excitations. The relationship between these expressions and the general anisotropic dielectric response matrix of the solid is discussed. These generalised expressions necessarily include the off-diagonal terms representing effects due to departure from translational invariance in the interaction. Results are presented for the diagonal back structure dependent inelastic and virtual inelastic scattering potentials for Si, from a calculation of the inverse dielectric matrix in the random phase approximation. Good agreement is found with experiment as a function of incident energies from 10 eV to 100 keV. Anisotropy effects and hence the interaction de localisation represented by the off-diagonal scattering potential terms, are found to be significant below 1 keV. 38 refs., 2 figs

  7. Electronic band gap and transport in graphene superlattice with a Gaussian profile potential voltage

    International Nuclear Information System (INIS)

    Zhang Yu-Ping; Yin Yi-Heng; Lü Huan-Huan; Zhang Hui-Yun

    2014-01-01

    We study the electronic properties for the graphene-based one-dimensional superlattices, whose potential voltages vary according to the envelope of a Gaussian function. It is found that an unusual Dirac point exists and its location is exactly associated with a zero-averaged wave number (zero-k-bar ) gap. This zero-k-bar gap is less sensitive to incident angle and lattice constants, properties opposing those of Bragg gap. The defect mode appearing inside the zero-k-bar gap has an effect on transmission, conductance, and shot noise, which will be useful for further investigation. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  8. A Comprehensive Analysis of the Correlations between Resting-State Oscillations in Multiple-Frequency Bands and Big Five Traits.

    Science.gov (United States)

    Ikeda, Shigeyuki; Takeuchi, Hikaru; Taki, Yasuyuki; Nouchi, Rui; Yokoyama, Ryoichi; Kotozaki, Yuka; Nakagawa, Seishu; Sekiguchi, Atsushi; Iizuka, Kunio; Yamamoto, Yuki; Hanawa, Sugiko; Araki, Tsuyoshi; Miyauchi, Carlos Makoto; Sakaki, Kohei; Nozawa, Takayuki; Yokota, Susumu; Magistro, Daniele; Kawashima, Ryuta

    2017-01-01

    Recently, the association between human personality traits and resting-state brain activity has gained interest in neuroimaging studies. However, it remains unclear if Big Five personality traits are represented in frequency bands (~0.25 Hz) of resting-state functional magnetic resonance imaging (fMRI) activity. Based on earlier neurophysiological studies, we investigated the correlation between the five personality traits assessed by the NEO Five-Factor Inventory (NEO-FFI), and the fractional amplitude of low-frequency fluctuation (fALFF) at four distinct frequency bands (slow-5 (0.01-0.027 Hz), slow-4 (0.027-0.073 Hz), slow-3 (0.073-0.198 Hz) and slow-2 (0.198-0.25 Hz)). We enrolled 835 young subjects and calculated the correlations of resting-state fMRI signals using a multiple regression analysis. We found a significant and consistent correlation between fALFF and the personality trait of extraversion at all frequency bands. Furthermore, significant correlations were detected in distinct brain regions for each frequency band. This finding supports the frequency-specific spatial representations of personality traits as previously suggested. In conclusion, our data highlight an association between human personality traits and fALFF at four distinct frequency bands.

  9. A Comprehensive Analysis of the Correlations between Resting-State Oscillations in Multiple-Frequency Bands and Big Five Traits

    Directory of Open Access Journals (Sweden)

    Shigeyuki Ikeda

    2017-06-01

    Full Text Available Recently, the association between human personality traits and resting-state brain activity has gained interest in neuroimaging studies. However, it remains unclear if Big Five personality traits are represented in frequency bands (~0.25 Hz of resting-state functional magnetic resonance imaging (fMRI activity. Based on earlier neurophysiological studies, we investigated the correlation between the five personality traits assessed by the NEO Five-Factor Inventory (NEO-FFI, and the fractional amplitude of low-frequency fluctuation (fALFF at four distinct frequency bands (slow-5 (0.01–0.027 Hz, slow-4 (0.027–0.073 Hz, slow-3 (0.073–0.198 Hz and slow-2 (0.198–0.25 Hz. We enrolled 835 young subjects and calculated the correlations of resting-state fMRI signals using a multiple regression analysis. We found a significant and consistent correlation between fALFF and the personality trait of extraversion at all frequency bands. Furthermore, significant correlations were detected in distinct brain regions for each frequency band. This finding supports the frequency-specific spatial representations of personality traits as previously suggested. In conclusion, our data highlight an association between human personality traits and fALFF at four distinct frequency bands.

  10. Importance of doping, dopant distribution, and defects on electronic band structure alteration of metal oxide nanoparticles: Implications for reactive oxygen species

    International Nuclear Information System (INIS)

    Saleh, Navid B.; Milliron, Delia J.; Aich, Nirupam; Katz, Lynn E.; Liljestrand, Howard M.; Kirisits, Mary Jo

    2016-01-01

    Metal oxide nanoparticles (MONPs) are considered to have the potency to generate reactive oxygen species (ROS), one of the key mechanisms underlying nanotoxicity. However, the nanotoxicology literature demonstrates a lack of consensus on the dominant toxicity mechanism(s) for a particular MONP. Moreover, recent literature has studied the correlation between band structure of pristine MONPs to their ability to introduce ROS and thus has downplayed the ROS-mediated toxicological relevance of a number of such materials. On the other hand, material science can control the band structure of these materials to engineer their electronic and optical properties and thereby is constantly modulating the pristine electronic structure. Since band structure is the fundamental material property that controls ROS-producing ability, band tuning via introduction of dopants and defects needs careful consideration in toxicity assessments. This commentary critically evaluates the existing material science and nanotoxicity literature and identifies the gap in our understanding of the role of important crystal structure features (i.e., dopants and defects) on MONPs' electronic structure alteration as well as their ROS-generation capability. Furthermore, this commentary provides suggestions on characterization techniques to evaluate dopants and defects on the crystal structure and identifies research needs for advanced theoretical predictions of their electronic band structures and ROS-generation abilities. Correlation of electronic band structure and ROS will not only aid in better mechanistic assessment of nanotoxicity but will be impactful in designing and developing ROS-based applications ranging from water disinfection to next-generation antibiotics and even cancer therapeutics. - Highlights: • Metal oxide nanoparticles (MONPs) produce reactive oxygen species (ROS) • Band structure of pristine MONPs is different than those with dopants/defects • Dopants/defects modulate

  11. Importance of doping, dopant distribution, and defects on electronic band structure alteration of metal oxide nanoparticles: Implications for reactive oxygen species

    Energy Technology Data Exchange (ETDEWEB)

    Saleh, Navid B., E-mail: navid.saleh@utexas.edu [Department of Civil, Architectural, and Environmental Engineering, University of Texas, Austin, TX 78712 (United States); Milliron, Delia J. [McKetta Department of Chemical Engineering, University of Texas, Austin, TX 78712 (United States); Aich, Nirupam [Department of Civil, Structural and Environmental Engineering, University at Buffalo, The State University of New York, Buffalo, NY, 14260 (United States); Katz, Lynn E.; Liljestrand, Howard M.; Kirisits, Mary Jo [Department of Civil, Architectural, and Environmental Engineering, University of Texas, Austin, TX 78712 (United States)

    2016-10-15

    Metal oxide nanoparticles (MONPs) are considered to have the potency to generate reactive oxygen species (ROS), one of the key mechanisms underlying nanotoxicity. However, the nanotoxicology literature demonstrates a lack of consensus on the dominant toxicity mechanism(s) for a particular MONP. Moreover, recent literature has studied the correlation between band structure of pristine MONPs to their ability to introduce ROS and thus has downplayed the ROS-mediated toxicological relevance of a number of such materials. On the other hand, material science can control the band structure of these materials to engineer their electronic and optical properties and thereby is constantly modulating the pristine electronic structure. Since band structure is the fundamental material property that controls ROS-producing ability, band tuning via introduction of dopants and defects needs careful consideration in toxicity assessments. This commentary critically evaluates the existing material science and nanotoxicity literature and identifies the gap in our understanding of the role of important crystal structure features (i.e., dopants and defects) on MONPs' electronic structure alteration as well as their ROS-generation capability. Furthermore, this commentary provides suggestions on characterization techniques to evaluate dopants and defects on the crystal structure and identifies research needs for advanced theoretical predictions of their electronic band structures and ROS-generation abilities. Correlation of electronic band structure and ROS will not only aid in better mechanistic assessment of nanotoxicity but will be impactful in designing and developing ROS-based applications ranging from water disinfection to next-generation antibiotics and even cancer therapeutics. - Highlights: • Metal oxide nanoparticles (MONPs) produce reactive oxygen species (ROS) • Band structure of pristine MONPs is different than those with dopants/defects • Dopants/defects modulate

  12. Ultrafast Charge and Triplet State Formation in Diketopyrrolopyrrole Low Band Gap Polymer/Fullerene Blends: Influence of Nanoscale Morphology of Organic Photovoltaic Materials on Charge Recombination to the Triplet State

    Directory of Open Access Journals (Sweden)

    René M. Williams

    2017-01-01

    Full Text Available Femtosecond transient absorption spectroscopy of thin films of two types of morphologies of diketopyrrolopyrrole low band gap polymer/fullerene-adduct blends is presented and indicates triplet state formation by charge recombination, an important loss channel in organic photovoltaic materials. At low laser fluence (approaching solar intensity charge formation characterized by a 1350 nm band (in ~250 fs dominates in the two PDPP-PCBM blends with different nanoscale morphologies and these charges recombine to form a local polymer-based triplet state on the sub-ns timescale (in ~300 and ~900 ps indicated by an 1100 nm absorption band. The rate of triplet state formation is influenced by the morphology. The slower rate of charge recombination to the triplet state (in ~900 ps belongs to a morphology that results in a higher power conversion efficiency in the corresponding device. Nanoscale morphology not only influences interfacial area and conduction of holes and electrons but also influences the mechanism of intersystem crossing (ISC. We present a model that correlates morphology to the exchange integral and fast and slow mechanisms for ISC (SOCT-ISC and H-HFI-ISC. For the pristine polymer, a flat and unstructured singlet-singlet absorption spectrum (between 900 and 1400 nm and a very minor triplet state formation (5% are observed at low laser fluence.

  13. Adsorbates in a Box: Titration of Substrate Electronic States

    Science.gov (United States)

    Cheng, Zhihai; Wyrick, Jonathan; Luo, Miaomiao; Sun, Dezheng; Kim, Daeho; Zhu, Yeming; Lu, Wenhao; Kim, Kwangmoo; Einstein, T. L.; Bartels, Ludwig

    2010-08-01

    Nanoscale confinement of adsorbed CO molecules in an anthraquinone network on Cu(111) with a pore size of ≈4nm arranges the CO molecules in a shell structure that coincides with the distribution of substrate confined electronic states. Molecules occupy the states approximately in the sequence of rising electron energy. Despite the sixfold symmetry of the pore boundary itself, the adsorbate distribution adopts the threefold symmetry of the network-substrate system, highlighting the importance of the substrate even for such quasi-free-electron systems.

  14. Effects of electron beam parameters and velocity spread on radio frequency output of a photonic band gap cavity gyrotron oscillator

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Ashutosh, E-mail: asingh.rs.ece@iitbhu.ac.in [Faculty of Physical Sciences, Institute of Natural Sciences and Humanities, Shri Ramswaroop Memorial University, Lucknow-Deva Road, Uttar Pradesh 225003 (India); Center of Research in Microwave Tubes, Department of Electronics Engineering, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005 (India); Jain, P. K. [Center of Research in Microwave Tubes, Department of Electronics Engineering, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005 (India)

    2015-09-15

    In this paper, the effects of electron beam parameters and velocity spread on the RF behavior of a metallic photonic band gap (PBG) cavity gyrotron operating at 35 GHz with TE{sub 041}–like mode have been theoretically demonstrated. PBG cavity is used here to achieve a single mode operation of the overmoded cavity. The nonlinear time-dependent multimode analysis has been used to observe the beam-wave interaction behavior of the PBG cavity gyrotron, and a commercially available PIC code “CST Particle Studio” has been reconfigured to obtain 3D simulation results in order to validate the analytical values. The output power for this typical PBG gyrotron has been obtained ∼108 kW with ∼15.5% efficiency in a well confined TE{sub 041}–like mode, while all other competing modes have significantly low values of power output. The output power and efficiency of a gyrotron depend highly on the electron beam parameters and velocity spread. The influence of several electron beam parameters, e.g., beam voltage, beam current, beam velocity pitch factor, and DC magnetic field, on the PBG gyrotron operations has been investigated. This study would be helpful in optimising the electron beam parameters and estimating accurate RF output power of the high frequency PBG cavity based gyrotron oscillators.

  15. The role of specific features of the electronic structure in electrical resistivity of band ferromagnets Co2Fe Z ( Z = Al, Si, Ga, Ge, In, Sn, Sb)

    Science.gov (United States)

    Kourov, N. I.; Marchenkov, V. V.; Perevozchikova, Yu. A.; Weber, H. W.

    2017-05-01

    The electrical resistivity ρ( T) of the band ferromagnets Co2FeZ (where Z = Al, Si, Ga, Ge, In, Sn, and Sb are s- and p-elements of Mendeleev's Periodic Table) has been investigated in the temperature range 4.2 K < T < 1100 K. It has been shown that the dependences ρ( T) of these alloys in a magnetically ordered state at temperatures T < T C are predominantly determined by the specific features of the electronic spectrum in the vicinity of the Fermi level. The processes of charge carrier scattering affect the behavior of the electrical resistivity ρ( T) only in the vicinity of the Curie temperature T C and above, as well as in the low-temperature range (at T ≪ T C).

  16. Band Alignment Determination of Two-Dimensional Heterojunctions and Their Electronic Applications

    KAUST Repository

    Chiu, Ming-Hui

    2018-01-01

    Two-dimensional (2D) layered materials such as MoS2 have been recognized as high on-off ratio semiconductors which are promising candidates for electronic and optoelectronic devices. In addition to the use of individual 2D materials, the accelerated

  17. Molecular electronics with single molecules in solid-state devices.

    Science.gov (United States)

    Moth-Poulsen, Kasper; Bjørnholm, Thomas

    2009-09-01

    The ultimate aim of molecular electronics is to understand and master single-molecule devices. Based on the latest results on electron transport in single molecules in solid-state devices, we focus here on new insights into the influence of metal electrodes on the energy spectrum of the molecule, and on how the electron transport properties of the molecule depend on the strength of the electronic coupling between it and the electrodes. A variety of phenomena are observed depending on whether this coupling is weak, intermediate or strong.

  18. Communication: Electronic flux induced by crossing the transition state

    Science.gov (United States)

    Jia, Dongming; Manz, Jörn; Yang, Yonggang

    2018-01-01

    We present a new effect of chemical reactions, e.g., isomerizations, that occurs when the reactants pass along the transition state, on the way to products. It is based on the well-known fact that at the transition state, the electronic structure of one isomer changes to the other. We discover that this switch of electronic structure causes a strong electronic flux that is well distinguishable from the usual flux of electrons that travel with the nuclei. As a simple but clear example, the effect is demonstrated here for bond length isomerization of Na2 (21Σu+), with adiabatic crossing the barrier between the inner and outer wells of the double minimum potential that support different "Rydberg" and "ionic" type electronic structures, respectively.

  19. Surface Resonance Bands on (001)W: Experimental Dispersion Relations

    DEFF Research Database (Denmark)

    Willis, R. F.; Feuerbacher, B.; Christensen, N. Egede

    1977-01-01

    A band of unbound surface states (resonances), located in an energy region above the vacuum threshold corresponding to an energy band gap in the electron states of the bulk crystal, has been observed by angle-resolved secondary-electron-emission spectroscopy. The experimental dispersion behavior...... is in agreement with the two-dimensional band structure of a clean (001)W surface recently proposed by Smith and Mittheiss....

  20. Energy of ground state of laminar electron-hole liquid

    International Nuclear Information System (INIS)

    Andryushin, E.A.

    1976-01-01

    The problem of a possible existence of metal electron-hole liquid in semiconductors is considered. The calculation has been carried out for the following model: two parallel planes are separated with the distance on one of the planes electrons moving, on the other holes doing. Transitions between the planes are forbidden. The density of particles for both planes is the same. The energy of the ground state and correlation functions for such electron-and hole system are calculated. It is shown that the state of a metal liquid is more advantageous against the exciton gas. For the mass ratio of electrons and holes, msub(e)/msub(h) → 0 a smooth rearrangement of the system into a state with ordered heavy particles is observed

  1. Electronically excited negative ion resonant states in chloroethylenes

    Energy Technology Data Exchange (ETDEWEB)

    Khvostenko, O.G., E-mail: khv@mail.ru; Lukin, V.G.; Tuimedov, G.M.; Khatymova, L.Z.; Kinzyabulatov, R.R.; Tseplin, E.E.

    2015-02-15

    Highlights: • Several novel dissociative negative ion channels were revealed in chloroethylenes. • The electronically excited resonant states were recorded in all chloroethylenes under study. • The states were assigned to the inter-shell types, but not to the core-excited Feshbach one. - Abstract: The negative ion mass spectra of the resonant electron capture by molecules of 1,1-dichloroethylene, 1,2-dichloroethylene-cis, 1,2-dichloroethylene-trans, trichloroethylene and tetrachloroethylene have been recorded in the 0–12 eV range of the captured electron energy using static magnetic sector mass spectrometer modified for operation in the resonant electron capture regime. As a result, several novel low-intensive dissociation channels were revealed in the compounds under study. Additionally, the negative ion resonant states were recorded at approximately 3–12 eV, mostly for the first time. These resonant states were assigned to the electronically excited resonances of the inter-shell type by comparing their energies with those of the parent neutral molecules triplet and singlet electronically excited states known from the energy-loss spectra obtained by previous studies.

  2. Role of band states and trap states in the electrical properties of organic semiconductors: Hopping versus mobility edge model

    KAUST Repository

    Mehraeen, Shafigh

    2013-05-01

    We compare the merits of a hopping model and a mobility edge model in the description of the effect of charge-carrier concentration on the electrical conductivity, carrier mobility, and Fermi energy of organic semiconductors. We consider the case of a composite electronic density of states (DOS) that consists of a superposition of a Gaussian DOS and an exponential DOS. Using kinetic Monte Carlo simulations, we apply the two models in order to interpret the recent experimental data reported for n-doped C60 films. While both models are capable of reproducing the experimental data very well and yield qualitatively similar characteristic parameters for the density of states, some discrepancies are found at the quantitative level. © 2013 American Physical Society.

  3. Measurement of Solid-State Optical Refrigeration by Two-Band Differential Luminescence Thermometry

    Science.gov (United States)

    2010-03-01

    high speed transimpedance amplifier that generates an output voltage proportional to the difference in the optical power in bands A and D, i.e., IA...bands in the luminescence spectrum by inter- ference filters, in combination with large core optical fi- bers and highly amplified balanced

  4. Comparative analysis of the vibrational structure of the absorption spectra of acrolein in the excited ( S 1) electronic state

    Science.gov (United States)

    Koroleva, L. A.; Tyulin, V. I.; Matveev, V. K.; Pentin, Yu. A.

    2012-04-01

    The assignments of absorption bands of the vibrational structure of the UV spectrum are compared with the assignments of bands obtained by the CRDS method in a supersonic jet from the time of laser radiation damping for the trans isomer of acrolein in the excited ( S 1) electronic state. The ν00 trans = 25861 cm-1 values and fundamental frequencies, including torsional vibration frequency, obtained by the two methods were found to coincide in the excited electronic state ( S 1) for this isomer. The assignments of several absorption bands of the vibrational structure of the spectrum obtained by the CRDS method were changed. Changes in the assignment of (0-v') transition bands of the torsional vibration of the trans isomer in the Deslandres table from the ν00 trans trans origin allowed the table to be extended to high quantum numbers v'. The torsional vibration frequencies up to v' = 5 were found to be close to the frequencies found by analyzing the vibrational structure of the UV spectrum and calculated quantum-mechanically. The coincidence of the barrier to internal rotation (the cis-trans transition) in the one-dimensional model with that calculated quantum-mechanically using the two-dimensional model corresponds to a planar structure of the acrolein molecule in the excited ( S 1) electronic state.

  5. Nanoscale probing of bandgap states on oxide particles using electron energy-loss spectroscopy.

    Science.gov (United States)

    Liu, Qianlang; March, Katia; Crozier, Peter A

    2017-07-01

    Surface and near-surface electronic states were probed with nanometer spatial resolution in MgO and TiO 2 anatase nanoparticles using ultra-high energy resolution electron energy-loss spectroscopy (EELS) coupled to a scanning transmission electron microscope (STEM). This combination allows the surface electronic structure determined with spectroscopy to be correlated with nanoparticle size, morphology, facet etc. By acquiring the spectra in aloof beam mode, radiation damage to the surface can be significantly reduced while maintaining the nanometer spatial resolution. MgO and TiO 2 showed very different bandgap features associated with the surface/sub-surface layer of the nanoparticles. Spectral simulations based on dielectric theory and density of states models showed that a plateau feature found in the pre-bandgap region in the spectra from (100) surfaces of 60nm MgO nanocubes is consistent with a thin hydroxide surface layer. The spectroscopy shows that this hydroxide species gives rise to a broad filled surface state at 1.1eV above the MgO valence band. At the surfaces of TiO 2 nanoparticles, pronounced peaks were observed in the bandgap region, which could not be well fitted to defect states. In this case, the high refractive index and large particle size may make Cherenkov or guided light modes the likely causes of the peaks. Copyright © 2016 Elsevier B.V. All rights reserved.

  6. Investigation of electronic states of infinite-layer SrFeO2 epitaxial thin films by X-ray photoemission and absorption spectroscopies

    International Nuclear Information System (INIS)

    Chikamatsu, Akira; Matsuyama, Toshiya; Hirose, Yasushi; Kumigashira, Hiroshi; Oshima, Masaharu; Hasegawa, Tetsuya

    2012-01-01

    Highlights: ► Electronic states of infinite-layer SrFeO 2 films have been experimentally observed. ► Fe 3d states have higher densities of states in the valence-band region. ► Three peaks derived from Fe 3d states were observed in the conduction-band region. ► Indirect bandgap value was determined to be 1.3 eV. - Abstract: We investigated the electronic states of a single-crystal SrFeO 2 epitaxial thin film in the valence-band and conduction-band regions using synchrotron-radiation X-ray photoemission and absorption spectroscopies. Fe 2p–3d resonant photoemission measurements revealed that the Fe 3d states have higher densities of states at binding energies of 3–5 eV and 5–8.5 eV in the valence-band region. The O K-edge X-ray absorption spectrum exhibited three peaks in the Fe 3d-derived conduction band hybridized with O 2p states; these can be assigned to Fe 3d xy , 3d xz + 3d yz , and 3d x 2 –y 2 . In addition, the indirect bandgap value of the SrFeO 2 film was determined to be 1.3 eV by transmission and absorption spectroscopies.

  7. Jumping magneto-electric states of electrons in semiconductor multiple quantum wells

    International Nuclear Information System (INIS)

    Pfeffer, Pawel; Zawadzki, Wlodek

    2011-01-01

    Orbital and spin electron states in semiconductor multiple quantum wells in the presence of an external magnetic field transverse to the growth direction are considered. Rectangular wells of GaAs/GaAlAs and InAs/AlSb are taken as examples. It is shown that, in addition to magneto-electric states known from one-well systems, there appear magneto-electric states having a much stronger dependence of energies on a magnetic field and exhibiting an interesting anti-crossing behavior. The origin of these states is investigated and it is shown that the strong field dependence of the energies is related to an unusual 'jumping' behavior of their wavefunctions between quantum wells as the field increases. The ways of investigating the jumping states by means of interband magneto-luminescence transitions or intraband cyclotron-like transitions are considered and it is demonstrated that the jumping states can be observed. The spin g factors of electrons in the jumping states are calculated using the real values of the spin–orbit interaction and bands' nonparabolicity for the semiconductors in question. It is demonstrated that the jumping states offer a wide variety of the spin g factors

  8. Ion sense of polarization of the electromagnetic wave field in the electron whistler frequency band

    Directory of Open Access Journals (Sweden)

    B. Lundin

    Full Text Available It is shown that the left-hand (or ion-type sense of polarization can appear in the field interference pattern of two plane electron whistler waves. Moreover, it is demonstrated that the ion-type polarized wave electric fields can be accompanied by the presence at the same observation point of electron-type polarized wave magnetic fields. The registration of ion-type polarized fields with frequencies between the highest ion gyrofrequency and the electron gyrofrequency in a cold, overdense plasma is a sufficient indication for the existence of an interference wave pattern, which can typically occur near artificial or natural reflecting magnetospheric plasma regions, inside waveguides (as in helicon discharges, for example, in fields resonantly emitted by beams of charged particles or, in principle, in some self-sustained, nonlinear wave field structures. A comparison with the conventional spectral matrix data processing approach is also presented in order to facilitate the calculations of the analyzed polarization parameters.

    Key words. Ionosphere (wave propagation Radio science (waves in plasma Space plasma physics (general or miscellaneous

  9. Ion sense of polarization of the electromagnetic wave field in the electron whistler frequency band

    Directory of Open Access Journals (Sweden)

    B. Lundin

    2002-08-01

    Full Text Available It is shown that the left-hand (or ion-type sense of polarization can appear in the field interference pattern of two plane electron whistler waves. Moreover, it is demonstrated that the ion-type polarized wave electric fields can be accompanied by the presence at the same observation point of electron-type polarized wave magnetic fields. The registration of ion-type polarized fields with frequencies between the highest ion gyrofrequency and the electron gyrofrequency in a cold, overdense plasma is a sufficient indication for the existence of an interference wave pattern, which can typically occur near artificial or natural reflecting magnetospheric plasma regions, inside waveguides (as in helicon discharges, for example, in fields resonantly emitted by beams of charged particles or, in principle, in some self-sustained, nonlinear wave field structures. A comparison with the conventional spectral matrix data processing approach is also presented in order to facilitate the calculations of the analyzed polarization parameters.Key words. Ionosphere (wave propagation Radio science (waves in plasma Space plasma physics (general or miscellaneous

  10. The role of the isolated 6s states in BiVO{sub 4} on the electronic and atomic structures

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Jie; Wang, Lin-Wang [Joint Center for Artificial Photosynthesis and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

    2014-10-27

    BiVO{sub 4} is one of the most promising photoanodes for water-splitting applications. Similar to many d{sup 10} materials, where the full-shell d electrons are not directly involved in the bonding, the Bi 6s electrons form isolated low-energy bands in BiVO{sub 4}. By systematically altering the energy of the Bi 6s states, we find direct evidences that the isolated s states, through the s-p coupling, affect the BiVO{sub 4} properties, including valence band maximum position, charge density, and atomic structural distortion. We find that many good properties of BiVO{sub 4} for water splitting are related to the s-p coupling due to the existence of Bi 6s states. Based on this understanding, we propose that alloying Bi with Sb can enhance these properties, and hence improve the water-splitting efficiency.

  11. Small radiation field dosimetry with 2-methylalanine miniature dosimeters at K-band electron paramagnetic resonance

    International Nuclear Information System (INIS)

    Chen, F.; Guzman Calcina, C.S.; Almeida, A. de; Almeida, C.E. de; Baffa, O.

    2007-01-01

    Minidosimeters of 2-methyalanine (2MA) with millimeter dimensions were produced and tested for small radiation field dosimetry. Their performance was assessed by measuring the relative output factor (ROF), beam profile (BP) and penumbra width values and were determined for square fields of 0.5x0.5, 1x1, 3x3, 5x5 and 10x10cm 2 . These results were compared with those obtained for Kodak X-Omat V radiographic film. The 2MA minidosimeters (mini2MA) were irradiated with 6 MV X-rays Varian/Clinac 2100 linear accelerator with SSD of 100 cm and depth of 1.5 cm (depth for build-up equilibrium). EPR measurements were made with a K-Band (24 GHz) spectrometer. The ROF and BP results demonstrate that the dimensions of the mini2MA are adequate for the field sizes used in this experiment. The results for penumbra width indicate that the spatial resolution of the mini2MA is comparable with that of radiographic film

  12. Electronic transitions and band offsets in C60:SubPc and C60:MgPc on MoO3 studied by modulated surface photovoltage spectroscopy

    International Nuclear Information System (INIS)

    Fengler, S.; Dittrich, Th.; Rusu, M.

    2015-01-01

    Electronic transitions at interfaces between MoO 3 layers and organic layers of C 60 , SubPc, MgPc, and nano-composite layers of SubPc:C 60 and MgPc:C 60 have been studied by modulated surface photovoltage (SPV) spectroscopy. For all systems, time dependent and modulated SPV signals pointed to dissociation of excitons at the MoO 3 /organic layer interfaces with a separation of holes towards MoO 3 . The highest occupied molecular orbital (HOMO)-lowest unoccupied molecular orbital (LUMO) gaps (E HL ) of C 60 , SubPc, and MgPc and the effective E HL of SubPc:C 60 and MgPc:C 60 were measured. The offsets between the LUMO (ΔE L ) or HOMO (ΔE H ) bands were obtained with high precision and amounted to 0.33 or 0.73 eV for SubPc:C 60 , respectively, and to −0.33 or 0.67 eV for MgPc:C 60 , respectively. Exponential tails below E HL and most pronounced sub-bandgap transitions were characterized and ascribed to disorder and transitions from HOMO bands to unoccupied defect states

  13. Influence of metallic surface states on electron affinity of epitaxial AlN films

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, Monu; Krishna, Shibin; Aggarwal, Neha [Advanced Materials and Devices Division, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Gupta, Govind, E-mail: govind@nplindia.org [Advanced Materials and Devices Division, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India)

    2017-06-15

    The present article investigates surface metallic states induced alteration in the electron affinity of epitaxial AlN films. AlN films grown by plasma-assisted molecular beam epitaxy system with (30% and 16%) and without metallic aluminium on the surface were probed via photoemission spectroscopic measurements. An in-depth analysis exploring the influence of metallic aluminium and native oxide on the electronic structure of the films is performed. It was observed that the metallic states pinned the Fermi Level (FL) near valence band edge and lead to the reduction of electron affinity (EA). These metallic states initiated charge transfer and induced changes in surface and interface dipoles strength. Therefore, the EA of the films varied between 0.6–1.0 eV due to the variation in contribution of metallic states and native oxide. However, the surface barrier height (SBH) increased (4.2–3.5 eV) adversely due to the availability of donor-like surface states in metallic aluminium rich films.

  14. Measuring GNSS ionospheric total electron content at Concordia, and application to L-band radiometers

    Directory of Open Access Journals (Sweden)

    Vincenzo Romano

    2013-06-01

    Full Text Available In the framework of the project BIS - Bipolar Ionospheric Scintillation and Total Electron Content Monitoring, the ISACCO-DMC0 and ISACCO-DMC1 permanent monitoring stations were installed in 2008. The principal scope of the stations is to measure the ionospheric total electron content (TEC and to monitor the ionospheric scintillations, using high-sampling-frequency global positioning system (GPS ionospheric scintillation and TEC monitor (GISTM receivers. The disturbances that the ionosphere can induce on the electromagnetic signals emitted by the Global Navigation Satellite System constellations are due to the presence of electron density anomalies in the ionosphere, which are particularly frequent at high latitudes, where the upper atmosphere is highly sensitive to perturbations coming from outer space. With the development of present and future low-frequency space-borne microwave missions (e.g., Soil Moisture and Ocean Salinity [SMOS], Aquarius, and Soil Moisture Active Passive missions, there is an increasing need to estimate the effects of the ionosphere on the propagation of electromagnetic waves that affects satellite measurements. As an example, how the TEC data collected at Concordia station are useful for the calibration of the European Space Agency SMOS data within the framework of an experiment promoted by the European Space Agency (known as DOMEX will be discussed. The present report shows the ability of the GISTM station to monitor ionospheric scintillation and TEC, which indicates that only the use of continuous GPS measurements can provide accurate information on TEC variability, which is necessary for continuous calibration of satellite data.

  15. Assessing the importance of frustration in a narrow-band strongly correlated electronic chain

    International Nuclear Information System (INIS)

    Lal, Siddhartha; Laad, Mukul S.

    2007-08-01

    We study a one-dimensional extended Hubbard model with longer-range Coulomb interactions at quarter-filling in the strong coupling limit. In this limit, we find the one dimensional transverse field Ising model (TFIM) to be the effective Hamiltonian governing the dynamics of the charge degrees of freedom. We find two different charge-ordered (CO) ground states as the strength of the longer range interactions is varied. At lower energies, these CO states drive two different spin-ordered ground states. A variety of response functions computed here bear a remarkable resemblance to recent experimental observations for organic TMTSF systems, and so we propose that these systems are proximate to a QCP associated with T = 0 charge order. (author)

  16. Measurements of electron avalanche formation time in W-band microwave air breakdown

    International Nuclear Information System (INIS)

    Cook, Alan M.; Hummelt, Jason S.; Shapiro, Michael A.; Temkin, Richard J.

    2011-01-01

    We present measurements of formation times of electron avalanche ionization discharges induced by a focused 110 GHz millimeter-wave beam in atmospheric air. Discharges take place in a free volume of gas, with no nearby surfaces or objects. When the incident field amplitude is near the breakdown threshold for pulsed conditions, measured formation times are ∼0.1-2 μs over the pressure range 5-700 Torr. Combined with electric field breakdown threshold measurements, the formation time data shows the agreement of 110 GHz air breakdown with the similarity laws of gas discharges.

  17. Measurements of electron avalanche formation time in W-band microwave air breakdown

    Science.gov (United States)

    Cook, Alan M.; Hummelt, Jason S.; Shapiro, Michael A.; Temkin, Richard J.

    2011-08-01

    We present measurements of formation times of electron avalanche ionization discharges induced by a focused 110 GHz millimeter-wave beam in atmospheric air. Discharges take place in a free volume of gas, with no nearby surfaces or objects. When the incident field amplitude is near the breakdown threshold for pulsed conditions, measured formation times are ˜0.1-2 μs over the pressure range 5-700 Torr. Combined with electric field breakdown threshold measurements, the formation time data shows the agreement of 110 GHz air breakdown with the similarity laws of gas discharges.

  18. From the Kohn-Sham band gap to the fundamental gap in solids. An integer electron approach

    NARCIS (Netherlands)

    Baerends, E. J.

    2017-01-01

    It is often stated that the Kohn-Sham occupied-unoccupied gap in both molecules and solids is "wrong". We argue that this is not a correct statement. The KS theory does not allow to interpret the exact KS HOMO-LUMO gap as the fundamental gap (difference (I - A) of electron affinity (A) and

  19. Quasiparticle self-consistent GW study of cuprates: electronic structure, model parameters, and the two-band theory for Tc.

    Science.gov (United States)

    Jang, Seung Woo; Kotani, Takao; Kino, Hiori; Kuroki, Kazuhiko; Han, Myung Joon

    2015-07-24

    Despite decades of progress, an understanding of unconventional superconductivity still remains elusive. An important open question is about the material dependence of the superconducting properties. Using the quasiparticle self-consistent GW method, we re-examine the electronic structure of copper oxide high-Tc materials. We show that QSGW captures several important features, distinctive from the conventional LDA results. The energy level splitting between d(x(2)-y(2)) and d(3z(2)-r(2)) is significantly enlarged and the van Hove singularity point is lowered. The calculated results compare better than LDA with recent experimental results from resonant inelastic xray scattering and angle resolved photoemission experiments. This agreement with the experiments supports the previously suggested two-band theory for the material dependence of the superconducting transition temperature, Tc.

  20. Electronic band structure and charge density wave transition in quasi-2D KMo6O17 purple bronze

    Science.gov (United States)

    Valbuena, M. A.; Avila, J.; Vyalikh, D. V.; Guyot, H.; Laubschat, C.; Molodtsov, S. L.; Asensio, M. C.

    2008-03-01

    High resolution angle-resolved photoemission of quasi-2D KMo6O17 purple bronze has been performed in the range from room temperature to 130 K, slightly above the charge density wave (CDW) transition (Tc = 110 K), and down to 35 K (well below Tc). In this paper we report a detailed study of how electronic band structure is affected by this transition driven by the hidden nesting scenario. The expected spectroscopic fingerprints of the CDW phase transition have been found and discussed according to the hidden one dimension and the development of a quasi-commensurate CDW. The excellent agreement between theory and our experimental results makes of potassium purple bronze a reference system for studying this type of instabilities.

  1. Electronic band structure and charge density wave transition in quasi-2D KMo6O17 purple bronze

    International Nuclear Information System (INIS)

    Valbuena, M A; Avila, J; Asensio, M C; Vyalikh, D V; Laubschat, C; Molodtsov, S L; Guyot, H

    2008-01-01

    High resolution angle-resolved photoemission of quasi-2D KMo 6 O 17 purple bronze has been performed in the range from room temperature to 130 K, slightly above the charge density wave (CDW) transition (T c = 110 K), and down to 35 K (well below T c ). In this paper we report a detailed study of how electronic band structure is affected by this transition driven by the hidden nesting scenario. The expected spectroscopic fingerprints of the CDW phase transition have been found and discussed according to the hidden one dimension and the development of a quasi-commensurate CDW. The excellent agreement between theory and our experimental results makes of potassium purple bronze a reference system for studying this type of instabilities

  2. Design of 6 MeV X-band electron linac for dual-head gantry radiotherapy system

    Science.gov (United States)

    Shin, Seung-wook; Lee, Seung-Hyun; Lee, Jong-Chul; Kim, Huisu; Ha, Donghyup; Ghergherehchi, Mitra; Chai, Jongseo; Lee, Byung-no; Chae, Moonsik

    2017-12-01

    A compact 6 MeV electron linac is being developed at Sungkyunkwan University, in collaboration with the Korea atomic energy research institute (KAERI). The linac will be used as an X-ray source for a dual-head gantry radiotherapy system. X-band technology has been employed to satisfy the size requirement of the dual-head gantry radiotherapy machine. Among the several options available, we selected a pi/2-mode, standing-wave, side-coupled cavity. This choice of radiofrequency (RF) cavity design is intended to enhance the shunt impedance of each cavity in the linac. An optimum structure of the RF cavity with a high-performance design was determined by applying a genetic algorithm during the optimization procedure. This paper describes the detailed design process for a single normal RF cavity and the entire structure, including the RF power coupler and coupling cavity, as well as the beam dynamics results.

  3. W-band Solid State Power Amplifier for Remote Sensing Radars, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — High power, compact, reliable and affordable power amplifiers operating in the W-band (94 GHz region) are critical to realizing transmitters for many NASA missions...

  4. W-Band Solid State Power Amplifier for Remote Sensing Radars, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — High power, compact, reliable and affordable power amplifiers operating in the W-band (94 GHz region) are critical to realizing transmitters for many NASA missions...

  5. Photoionization of furan from the ground and excited electronic states.

    Science.gov (United States)

    Ponzi, Aurora; Sapunar, Marin; Angeli, Celestino; Cimiraglia, Renzo; Došlić, Nađa; Decleva, Piero

    2016-02-28

    Here we present a comparative computational study of the photoionization of furan from the ground and the two lowest-lying excited electronic states. The study aims to assess the quality of the computational methods currently employed for treating bound and continuum states in photoionization. For the ionization from the ground electronic state, we show that the Dyson orbital approach combined with an accurate solution of the continuum one particle wave functions in a multicenter B-spline basis, at the density functional theory (DFT) level, provides cross sections and asymmetry parameters in excellent agreement with experimental data. On the contrary, when the Dyson orbitals approach is combined with the Coulomb and orthogonalized Coulomb treatments of the continuum, the results are qualitatively different. In excited electronic states, three electronic structure methods, TDDFT, ADC(2), and CASSCF, have been used for the computation of the Dyson orbitals, while the continuum was treated at the B-spline/DFT level. We show that photoionization observables are sensitive probes of the nature of the excited states as well as of the quality of excited state wave functions. This paves the way for applications in more complex situations such as time resolved photoionization spectroscopy.

  6. Stability of the antiferromagnetic state in the electron doped iridates

    Science.gov (United States)

    Bhowal, Sayantika; Moradi Kurdestany, Jamshid; Satpathy, Sashi

    2018-06-01

    Iridates such as Sr2IrO4 are of considerable interest owing to the formation of the Mott insulating state driven by a large spin–orbit coupling. However, in contrast to the expectation from the Nagaoka theorem that a single doped hole or electron destroys the anti-ferromagnetic (AFM) state of the half-filled Hubbard model in the large U limit, the anti-ferromagnetism persists in the doped Iridates for a large dopant concentration beyond half-filling. With a tight-binding description of the relevant states by the third-neighbor (t 1, t 2, t 3, U) Hubbard model on the square lattice, we examine the stability of the AFM state to the formation of a spin spiral state in the strong coupling limit. The third-neighbor interaction t 3 is important for the description of the Fermi surface of the electron doped system. A phase diagram in the parameter space is obtained for the regions of stability of the AFM state. Our results qualitatively explain the robustness of the AFM state in the electron doped iridate (such as Sr2‑x La x IrO4), observed in many experiments, where the AFM state continues to be stable until a critical dopant concentration.

  7. Electron capture to autoionizing states of multiply charged ions

    International Nuclear Information System (INIS)

    Mack, E.M.

    1987-01-01

    The present thesis investigates electron capture reactions resulting from slow collisions (V q+ ) and neutral gas targets (B). The energy spectra of the emitted electrons are measured; detection angle is 50 0 . Mainly, autoionizing double capture resulting from collisions with two-electron targets (He, H 2 ) is studied; then, the emitted electrons stem from doubly excited projectile states. The projectiles used are bare C 6+ , the H-like and He-like ions of C, N and O, He-like Ne 8+ and Ne-like Ar 8+ . Excited metastable projectiles used are C 5+ (2s), He-like projectiles A q+ (1s2s 3 S) and Ar 8+ (...2p 5 3s). Comparison is made with the predictions of a recently proposed extended classical barrier model, that was developed in connection with the work. This model assumes sequential capture of the electrons ('two-step' process); it predicts the realized binding enegies of the captured electrons - which may be directly determined from the autoionization spectra using only the projectile charge, the ionization potentials of the target and the collision velocity as parameters. No adjustable parameter enters into the calculations. The term energies and decay modes of the highly excited product ions themselves are studied. Generally, the autoionizing decay of these states is found to proceed preferentially to the directly adjacent lower singly excited state. Experimental evidence is presented, that triply excited states decay by successive emission of two electrons, whenever this is energetically possible. Finally, the L-MM decay in few-electron systems is considered. 314 refs.; 96 figs.; 29 tabs

  8. Bimolecular Excited-State Electron Transfer with Surprisingly Long-Lived Radical Ions

    KAUST Repository

    Alsam, Amani Abdu

    2015-09-02

    We explored the excited-state interactions of bimolecular, non-covalent systems consisting of cationic poly[(9,9-di(3,3’-N,N’-trimethyl-ammonium) propyl fluorenyl-2,7-diyl)-alt-co-(9,9-dioctyl-fluorenyl-2,7-diyl)] diiodide salt (PFN) and 1,4-dicyanobenzene (DCB) using steady-state and time-resolved techniques, including femto- and nanosecond transient absorption and femtosecond infrared spectroscopies with broadband capabilities. The experimental results demonstrated that photo-induced electron transfer from PFN to DCB occurs on the picosecond time scale, leading to the formation of PFN+• and DCB-• radical ions. Interestingly, real-time observations of the vibrational marker modes on the acceptor side provided direct evidence and insight into the electron transfer process indirectly inferred from UV-Vis experiments. The band narrowing on the picosecond time scale observed on the antisymmetric C-N stretching vibration of the DCB radical anion provides clear experimental evidence that a substantial part of the excess energy is channeled into vibrational modes of the electron transfer product and that the geminate ion pairs dissociate. More importantly, our nanosecond time-resolved data indicate that the charge-separated state is very long lived ( 30 ns) due to the dissociation of the contact radical ion pair into free ions. Finally, the fast electron transfer and slow charge recombination anticipate the current donor−acceptor system with potential applications in organic solar cells.

  9. Bimolecular Excited-State Electron Transfer with Surprisingly Long-Lived Radical Ions

    KAUST Repository

    Alsam, Amani Abdu; Aly, Shawkat Mohammede; Usman, Anwar; Parida, Manas R.; Del Gobbo, Silvano; Alarousu, Erkki; Mohammed, Omar F.

    2015-01-01

    We explored the excited-state interactions of bimolecular, non-covalent systems consisting of cationic poly[(9,9-di(3,3’-N,N’-trimethyl-ammonium) propyl fluorenyl-2,7-diyl)-alt-co-(9,9-dioctyl-fluorenyl-2,7-diyl)] diiodide salt (PFN) and 1,4-dicyanobenzene (DCB) using steady-state and time-resolved techniques, including femto- and nanosecond transient absorption and femtosecond infrared spectroscopies with broadband capabilities. The experimental results demonstrated that photo-induced electron transfer from PFN to DCB occurs on the picosecond time scale, leading to the formation of PFN+• and DCB-• radical ions. Interestingly, real-time observations of the vibrational marker modes on the acceptor side provided direct evidence and insight into the electron transfer process indirectly inferred from UV-Vis experiments. The band narrowing on the picosecond time scale observed on the antisymmetric C-N stretching vibration of the DCB radical anion provides clear experimental evidence that a substantial part of the excess energy is channeled into vibrational modes of the electron transfer product and that the geminate ion pairs dissociate. More importantly, our nanosecond time-resolved data indicate that the charge-separated state is very long lived ( 30 ns) due to the dissociation of the contact radical ion pair into free ions. Finally, the fast electron transfer and slow charge recombination anticipate the current donor−acceptor system with potential applications in organic solar cells.

  10. Integral cross sections for electron impact excitation of vibrational and electronic states in phenol

    Energy Technology Data Exchange (ETDEWEB)

    Neves, R. F. C. [School of Chemical and Physical Sciences, Flinders University, GPO Box 2100, Adelaide SA 5001 (Australia); Instituto Federal do Sul de Minas Gerais, Campus Poços de Caldas, Minas Gerais (Brazil); Departamento de Física, Universidade Federal de Juiz de Fora, 36036-330 Juiz de Fora, Minas Gerais (Brazil); Jones, D. B. [School of Chemical and Physical Sciences, Flinders University, GPO Box 2100, Adelaide SA 5001 (Australia); Lopes, M. C. A. [Departamento de Física, Universidade Federal de Juiz de Fora, 36036-330 Juiz de Fora, Minas Gerais (Brazil); Blanco, F. [Departamento de Física Atómica, Molecular y Nuclear, Universidad Complutense de Madrid, 28040 Madrid (Spain); García, G. [Instituto de Física Fundamental, CSIC, Serrano 113-bis, 28006 Madrid (Spain); Ratnavelu, K. [Institute of Mathematical Sciences, University of Malaya, 50603 Kuala Lumpur (Malaysia); Brunger, M. J., E-mail: Michael.Brunger@flinders.edu.au [School of Chemical and Physical Sciences, Flinders University, GPO Box 2100, Adelaide SA 5001 (Australia); Institute of Mathematical Sciences, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2015-05-21

    We report on measurements of integral cross sections (ICSs) for electron impact excitation of a series of composite vibrational modes and electronic-states in phenol, where the energy range of those experiments was 15–250 eV. There are currently no other results against which we can directly compare those measured data. We also report results from our independent atom model with screened additivity rule correction computations, namely, for the inelastic ICS (all discrete electronic states and neutral dissociation) and the total ionisation ICS. In addition, for the relevant dipole-allowed excited electronic states, we also report f-scaled Born-level and energy-corrected and f-scaled Born-level (BEf-scaled) ICS. Where possible, our measured and calculated ICSs are compared against one another with the general level of accord between them being satisfactory to within the measurement uncertainties.

  11. Transverse-emittance measurements on an S-band photocathode RF electron gun

    CERN Document Server

    Schmerge, J F; Clendenin, J E; Decker, Franz Josef; Dowell, D H; Gierman, S M; Limborg, C G; Murphy, B F

    2002-01-01

    Proposed fourth-generation light sources using SASE FELs to generate short pulse, coherent, X-rays require demonstration of high brightness electron sources. The gun test facility at SLAC was built to test high brightness sources for the proposed linac coherent light source at SLAC. The transverse-emittance measurements are made at nearly 30 MeV by measuring the spot size on a YAG screen using the quadrupole scan technique. The emittance was measured to vary from 1 to 3.5 mm mrad as the charge is increased from 50 to 350 pC using a laser pulse width of 2 ps FWHM. The measurements are in good agreement with simulation results using the LANL version of PARMELA.

  12. Wurtzite/zinc-blende electronic-band alignment in basal-plane stacking faults in semi-polar GaN

    Science.gov (United States)

    Monavarian, Morteza; Hafiz, Shopan; Izyumskaya, Natalia; Das, Saikat; Özgür, Ümit; Morkoç, Hadis; Avrutin, Vitaliy

    2016-02-01

    Heteroepitaxial semipolar and nonpolar GaN layers often suffer from high densities of extended defects including basal plane stacking faults (BSFs). BSFs which are considered as inclusions of cubic zinc-blende phase in wurtzite matrix act as quantum wells strongly affecting device performance. Band alignment in BSFs has been discussed as type of band alignment at the wurtzite/zinc blende interface governs the response in differential transmission; fast decay after the pulse followed by slow recovery due to spatial splitting of electrons and heavy holes for type- II band alignment in contrast to decay with no recovery in case of type I band alignment. Based on the results, band alignment is demonstrated to be of type II in zinc-blende segments in wurtzite matrix as in BSFs.

  13. Recent advances in the 5f-relevant electronic states and unconventional superconductivity of actinide compounds

    International Nuclear Information System (INIS)

    Haga, Yoshinori; Sakai, Hironori; Kambe, Shinsaku

    2007-01-01

    Recent advances in the understanding of the 5f-relevant electronic states and unconventional superconducting properties are reviewed in actinide compounds of UPd 2 Al 3 . UPt 3 , URu 2 Si 2 , UGe 2 , and PuRhGa 5 . These are based on the experimental results carried out on high-quality single crystal samples, including transuranium compounds, which were grown by using combined techniques. The paring state and the gap structure of these superconductors are discussed, especially for the corresponding Fermi surfaces which were clarified by the de Haas-van Alphen experiment and the energy band calculations. A detailed systematic study using the NQR/NMR spectroscopy reveals the d-wave superconductivity in PuRhGa 5 and the difference of magnetic excitations due to the difference of ground states in U-, Np-, and Pu-based AnTGa 5 (T: transition metal) compounds. (author)

  14. Perpendicular State of an Electronically Excited Stilbene: Observation by Femtosecond-Stimulated Raman Spectroscopy.

    Science.gov (United States)

    Quick, Martin; Dobryakov, Alexander L; Ioffe, Ilya N; Granovsky, Alex A; Kovalenko, Sergey A; Ernsting, Nikolaus P

    2016-10-20

    In the photoisomerization path of stilbene, a perpendicular state P on the S 1 potential energy surface is expected just before internal conversion through a conical intersection S 1 /S 0 . For decades the observation of P was thwarted by a short lifetime τ P in combination with slow population flow over a barrier. But these limitations can be overcome by ethylenic substitution. Following optical excitation of trans-1,1'-dicyanostilbene, P is populated significantly (τ P = 27 ps in n-hexane) and monitored by an exited-state absorption band at 370 nm. Here we report stimulated Raman lines of P. The strongest, at 1558 cm -1 , is attributed to stretching vibrations of the phenyl rings. Transient electronic states, resonance conditions, and corresponding Raman signals are discussed.

  15. ELECTRONIC-STRUCTURE OF THE MISFIT-LAYER COMPOUND (SNS)(1.17)NBS2 DEDUCED FROM BAND-STRUCTURE CALCULATIONS AND PHOTOELECTRON-SPECTRA

    NARCIS (Netherlands)

    FANG, CM; ETTEMA, ARHF; HAAS, C; WIEGERS, GA; VANLEUKEN, H; DEGROOT, RA

    1995-01-01

    In order to understand the electronic structure of the misfit-layer compound (SnS)(1.17)NbS2 we carried out an ab initio band-structure calculation of the closely related commensurate compound (SnS)(1.20)NbS2. The band structure is compared with calculations for NbS2 and for hypothetical SnS with

  16. Electronic structure of the misfit-layer compound (SnS)1.17NbS2 deduced from band-structure calculations and photoelectron spectra

    NARCIS (Netherlands)

    Fang, C.M.; Ettema, A.R.H.F.; Haas, C.; Wiegers, G.A.; Leuken, H. van; Groot, R.A. de

    1995-01-01

    In order to understand the electronic structure of the misfit-layer compound (SnS)1.17NbS2 we carried out an ab initio band-structure calculation of the closely related commensurate compound (SnS)1.20NbS2. The band structure is compared with calculations for NbS2 and for hypothetical SnS with

  17. Electronic states in clusters of H forms of zeolites with variation of the Si/Al ratio

    International Nuclear Information System (INIS)

    Gun'ko, V.M.

    1987-01-01

    Fragments of H forms of zeolites of the faujasite type including up to 12 silicon- and aluminum-oxygen tetrahedrons and having different Si/Al ratios have been calculated in the cluster approximation by the MINDO/3 and CNDO/2 methods. The dependence of the integral and orbital densities of electronic states in the clusters on the aluminum content has been investigated. It has been shown that the profiles of the s- and p-orbital density of states of Al remain practically unchanged as the Si/Al ratio is lowered and that the maxima of the orbital density of states of Si broaden, and new maxima appear at the bottom and top of the valence band. When the acidity of the structural OH groups is lowered, the maxima of the orbital density of states of the H atoms are displaced appreciably only in the deep valence band, while in the upper valence band the positions of the peaks of the s-orbital density of states of the H atoms remain constant. Satisfactory agreement of the calculated orbital densities of states of Si, Al, and O with the corresponding x-ray photoelectron spectra has been obtained. In the deep valence band the data from the MINDO/3 method are better than those from the CNDO/2 method and reproduce the positions of the maxima in the x-ray photoelectron spectra

  18. Dipole-bound states as doorways in (dissociative) electron attachment

    International Nuclear Information System (INIS)

    Sommerfeld, Thomas

    2005-01-01

    This communication starts with a comparison of dissociative recombination and dissociative attachment placing emphasis on the role of resonances as reactive intermediates. The main focus is then the mechanism of electron attachment to polar molecules at very low energies (100 meV). The scheme considered consists of two steps: First, an electron is captured in a diffuse dipole-bound state depositing its energy in the vibrational degrees of freedom, in other words, a vibrational Feshbach resonance is formed. Then, owing to the coupling with a valence state, the electron is transferred into a compact valence orbital, and depending on the electron affinities of the valence state and possible dissociation products, as well as on the details of the intramolecular redistribution of vibrational energy, long-lived anions can be generated or dissociation reactions can be initiated. The key property in this context is the electronic coupling strength between the diffuse dipole-bound and the compact valence states. We describe how the coupling strength can be extracted from ab initio data, and present results for Nitromethane, Uracil and Cyanoacetylene

  19. Electron-nuclear magnetic resonance in the inverted state

    International Nuclear Information System (INIS)

    Ignatchenko, V.A.; Tsifrinovich, V.I.

    1975-01-01

    The paper considers the susceptibility of the electron-nucleus system of a ferromagnet when nuclear magnetization is inverted with respect to the hyperfine field direction. The inverted state is a situation in which nuclear magnetization is turned through π relative to its equilibrium orientation, whereas electron magnetization is in an equilibrium state with respect to an external magnetic field. The consideration is carried out for a thin plate magnetized in its plane. Amplification of a weak radiofrequency signal can be attained under the fulfilment of an additional inequality relating the interaction frequency with electron and nuclear relaxation parameters. The gain may exceed the gain for an inverted nuclear system in magnetically disordered substances. In the range of strong interaction between the frequencies of ferromagnetic (FMR) and nuclear magnetic (NMR) resonances the electron-nuclear magnetic resonance (ENMR) spectrum possesses a fine structure which is inverse to that obtained for the ENMR spectrum in a normal state. The inverted state ENMR line shape is analysed in detail for the case of so weak HF fields that the relaxation conditions may be regarded as stationary. The initial (linear) stages of a forced transient process arising in an electron-nuclear system under the effect of a strong HF field are briefly analysed

  20. SUPRATHERMAL ELECTRON STRAHL WIDTHS IN THE PRESENCE OF NARROW-BAND WHISTLER WAVES IN THE SOLAR WIND

    Energy Technology Data Exchange (ETDEWEB)

    Kajdič, P. [Instituto de Geofísica, Universidad Nacional Autónoma de México, Mexico City (Mexico); Alexandrova, O.; Maksimovic, M.; Lacombe, C. [LESIA, Observatoire de Paris, PSL Research University, CNRS, UPMC UniversitéParis 06, Université Paris-Diderot, 5 Place Jules Janssen, F-92190 Meudon (France); Fazakerley, A. N., E-mail: primoz@geofisica.unam.mx [Mullard Space Science Laboratory, University College London (United Kingdom)

    2016-12-20

    We perform the first statistical study of the effects of the interaction of suprathermal electrons with narrow-band whistler mode waves in the solar wind (SW). We show that this interaction does occur and that it is associated with enhanced widths of the so-called strahl component. The latter is directed along the interplanetary magnetic field away from the Sun. We do the study by comparing the strahl pitch angle widths in the SW at 1 AU in the absence of large scale discontinuities and transient structures, such as interplanetary shocks, interplanetary coronal mass ejections, stream interaction regions, etc. during times when the whistler mode waves were present and when they were absent. This is done by using the data from two Cluster instruments: Spatio Temporal Analysis of Field Fluctuations experiment (STAFF) data in the frequency range between ∼0.1 and ∼200 Hz were used for determining the wave properties and Plasma Electron And Current Experiment (PEACE) data sets at 12 central energies between ∼57 eV (equivalent to ∼10 typical electron thermal energies in the SW, E{sub T}) and ∼676 eV (∼113 E{sub T}) for pitch angle measurements. Statistical analysis shows that, during the intervals with the whistler waves, the strahl component on average exhibits pitch angle widths between 2° and 12° larger than during the intervals when these waves are not present. The largest difference is obtained for the electron central energy of ∼344 eV (∼57 ET).

  1. SUPRATHERMAL ELECTRON STRAHL WIDTHS IN THE PRESENCE OF NARROW-BAND WHISTLER WAVES IN THE SOLAR WIND

    International Nuclear Information System (INIS)

    Kajdič, P.; Alexandrova, O.; Maksimovic, M.; Lacombe, C.; Fazakerley, A. N.

    2016-01-01

    We perform the first statistical study of the effects of the interaction of suprathermal electrons with narrow-band whistler mode waves in the solar wind (SW). We show that this interaction does occur and that it is associated with enhanced widths of the so-called strahl component. The latter is directed along the interplanetary magnetic field away from the Sun. We do the study by comparing the strahl pitch angle widths in the SW at 1 AU in the absence of large scale discontinuities and transient structures, such as interplanetary shocks, interplanetary coronal mass ejections, stream interaction regions, etc. during times when the whistler mode waves were present and when they were absent. This is done by using the data from two Cluster instruments: Spatio Temporal Analysis of Field Fluctuations experiment (STAFF) data in the frequency range between ∼0.1 and ∼200 Hz were used for determining the wave properties and Plasma Electron And Current Experiment (PEACE) data sets at 12 central energies between ∼57 eV (equivalent to ∼10 typical electron thermal energies in the SW, E T ) and ∼676 eV (∼113 E T ) for pitch angle measurements. Statistical analysis shows that, during the intervals with the whistler waves, the strahl component on average exhibits pitch angle widths between 2° and 12° larger than during the intervals when these waves are not present. The largest difference is obtained for the electron central energy of ∼344 eV (∼57 ET).

  2. Excitation of the 4.3-μm bands of CO2 by low-energy electrons

    International Nuclear Information System (INIS)

    Bulos, R.R.; Phelps, A.V.

    1976-01-01

    Rate coefficients for the excitation of the 4.3-μm bands of CO 2 by low-energy electrons in CO 2 have been measured using a drift-tube technique. The CO 2 density [(1.5 to 7) x 10 17 molecules/cm 3 ] was chosen to maximize the radiation reaching the detector. Line-by-line transmission calculations were used to take into account the absorption of 4.3-μm radiation. A small fraction of the approximately 10 -8 W of the 4.3-μm radiation produced by the approximately 10 -7 -A electron current was incident on an InSb photovoltaic detector. The detector calibration and absorption calculations were checked by measuring the readily calculated excitation coefficients for vibrational excitation of N 2 containing a small concentration of CO 2 . For pure CO 2 the number of molecules capable of emitting 4.3-μm radiation produced per cm of electron drift and per CO 2 molecule varied from 10 -17 cm -2 at E/N = 6 x 10 -17 V cm 2 to 5.4 x 10 -16 cm -2 at E/N = 4 x 10 -16 V cm 2 . Here E is the electric field and N is total gas density. The excitation coefficients at lower E/N are much larger than estimated previously. A set of vibrational excitation cross sections is obtained for CO 2 which is consistent with the excitation coefficient data and with most of the published electron-beam data

  3. Density of the unoccupied electronic states of the ultrathin films of the aziridinylphenylpyrrol substituted fullerene

    International Nuclear Information System (INIS)

    Komolov, A.S.; Lazneva, E.F.; Gerasimova, N.B.; Panina, Yu.A.; Zashikhin, G.D.; Baramygin, A.V.; Si, P.; Akhremtchik, S.N.; Gavrikov, A.A.

    2015-01-01

    Graphical abstract: - Highlights: • DOUS of the ultrathin films of the aziridinylphenylpyrrol substituted C_6_0 was determined by using the transmission of the low-energy electrons technique and by the DFT calculations. • The introduction of the APP substituent to C_6_0 molecule was accompanied by the modifications of DOUS in the energy range from 2 eV to 9 eV above E_F. • The major DOUS bands were assigned π* and σ* - type character using the spatial distribution of the relevant orbitals obtained from the DFT calculation results. - Abstract: The ultrathin films of aziridinylphenylpyrrol-C_6_0 (APP-C_6_0) and of the unsubstituted C_6_0 thermally deposited in UHV on an oxidized silicon substrate (SiO_2)n-Si were studied experimentally using the very low energy electron diffraction (VLEED) method and the total current spectroscopy (TCS) measurement scheme. The density of the unoccupied electronic states (DOUS) located 2-20 eV above the Fermi level (E_F) of the films under study was determined using the TCS results and using the results of the density functional theory (DFT) calculations of the vacant electronic orbitals of the APP-C_6_0 and C_6_0 molecules. The DOUS peak structure obtained on the basis of the calculation results corresponds well to the structure of the major DOUS bands obtained from the TCS experiment. The comparison of the DOUS spectra of the APP-C_6_0 and C_6_0 films under study showed that the introduction of the APP substituent to the C_6_0 molecule was accompanied by the pronounced changes of the π* DOUS bands in the energy range from 2 eV to 5 eV above E_F and of the DOUS band composed from both π* and σ* - type orbitals in the energy range from 5 eV to 9 eV above E_F. The formation of the low-lying σ* DOUS band in the APP-C_6_0 film in the energy range from 8 eV to 13 eV above E_F can be explained by the superposition of the relevant DOUS maxima from the C_6_0 film and from the APP fragment.

  4. Leaky electronic states for photovoltaic photodetectors based on asymmetric superlattices

    Science.gov (United States)

    Penello, Germano Maioli; Pereira, Pedro Henrique; Pires, Mauricio Pamplona; Sivco, Deborah; Gmachl, Claire; Souza, Patricia Lustoza

    2018-01-01

    The concept of leaky electronic states in the continuum is used to achieve room temperature operation of photovoltaic superlattice infrared photodetectors. A structural asymmetric InGaAs/InAlAs potential profile is designed to create states in the continuum with the preferential direction for electron extraction and, consequently, to obtain photovoltaic operation at room temperature. Due to the photovoltaic operation and virtual increase in the bandoffset, the device presents both low dark current and low noise. The Johnson noise limited specific detectivity reaches values as high as 1.4 × 1011 Jones at 80 K. At 300 K, the detectivity obtained is 7.0 × 105 Jones.

  5. The effect of simultaneous substitution on the electronic band structure and thermoelectric properties of Se-doped Co3SnInS2 with the Kagome lattice

    OpenAIRE

    Fujioka, Masaya; Shibuya, Taizo; Nakai, Junya; Yoshiyasu, Keigo; Sakai, Yuki; Takano, Yoshihiko; Kamihara, Yoichi; Matoba, Masanori

    2012-01-01

    The thermoelectric properties and electronic band structures for Se-doped Co3SnInS2 were examined. The parent compound of this material (Co3Sn2S2) has two kinds of Sn sites (Sn1 and Sn2 sites). The density functional theory (DFT) calculations show that the indium substitution at the Sn2 site induces a metallic band structure, on the other hand, a semiconducting band structure is obtained from substitution at the Sn1 site. However, according to the previous reports, since the indium atom prefe...

  6. FDTD method for computing the off-plane band structure in a two-dimensional photonic crystal consisting of nearly free-electron metals

    Energy Technology Data Exchange (ETDEWEB)

    Xiao Sanshui; He Sailing

    2002-12-01

    An FDTD numerical method for computing the off-plane band structure of a two-dimensional photonic crystal consisting of nearly free-electron metals is presented. The method requires only a two-dimensional discretization mesh for a given off-plane wave number k{sub z} although the off-plane propagation is a three-dimensional problem. The off-plane band structures of a square lattice of metallic rods with the high-frequency metallic model in the air are studied, and a complete band gap for some nonzero off-plane wave number k{sub z} is founded.

  7. FDTD method for computing the off-plane band structure in a two-dimensional photonic crystal consisting of nearly free-electron metals

    International Nuclear Information System (INIS)

    Xiao Sanshui; He Sailing

    2002-01-01

    An FDTD numerical method for computing the off-plane band structure of a two-dimensional photonic crystal consisting of nearly free-electron metals is presented. The method requires only a two-dimensional discretization mesh for a given off-plane wave number k z although the off-plane propagation is a three-dimensional problem. The off-plane band structures of a square lattice of metallic rods with the high-frequency metallic model in the air are studied, and a complete band gap for some nonzero off-plane wave number k z is founded

  8. Semiconductors bonds and bands

    CERN Document Server

    Ferry, David K

    2013-01-01

    As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

  9. Light-Induced Type-II Band Inversion and Quantum Anomalous Hall State in Monolayer FeSe

    Science.gov (United States)

    Wang, Z. F.; Liu, Zhao; Yang, Jinlong; Liu, Feng

    2018-04-01

    Coupling a quantum anomalous Hall (QAH) state with a superconducting state offers an attractive approach to detect the signature alluding to a topological superconducting state [Q. L. He et al., Science 357, 294 (2017), 10.1126/science.aag2792], but its explanation could be clouded by disorder effects in magnetic doped QAH materials. On the other hand, an antiferromagnetic (AFM) quantum spin Hall (QSH) state is identified in the well-known high-temperature 2D superconductor of monolayer FeSe [Z. F. Wang et al., Nat. Mater. 15, 968 (2016), 10.1038/nmat4686]. Here, we report a light-induced type-II band inversion (BI) and a QSH-to-QAH phase transition in the monolayer FeSe. Depending on the handedness of light, a spin-tunable QAH state with a high Chern number of ±2 is realized. In contrast to the conventional type-I BI resulting from intrinsic spin-orbital coupling (SOC), which inverts the band an odd number of times and respects time reversal symmetry, the type-II BI results from a light-induced handedness-dependent effective SOC, which inverts the band an even number of times and does not respect time reversal symmetry. The interplay between these two SOC terms makes the spin-up and -down bands of an AFM QSH state respond oppositely to a circularly polarized light, leading to the type-II BI and an exotic topological phase transition. Our finding affords an exciting opportunity to detect Majorana fermions in one single material without magnetic doping.

  10. Band Jahn-Teller effect on the density of states of the magnetic high-T{sub c} superconductors: A model study

    Energy Technology Data Exchange (ETDEWEB)

    Pradhan, B. [Department of Physics, Govt. Science College, Malkangiri 764 048 (India); Mohanta, K.L. [Department of Physics, ITER, Siksha ' O' Anusandhan University, Bhubaneswar 751 030 (India); Rout, G.C., E-mail: gcr@iopb.res.in [Condensed Matter Physics Group, Dept. of Applied Physics and Ballistics, F.M. University, Balasore 756 019 (India)

    2012-05-15

    We report here a mean-field study of competing antiferromagnetism, superconductivity and lattice strain phases and their effect on the local density of states of the cuprate system. Our model Hamiltonian incorporating these interactions is reported earlier [G.C. Rout et al., Physica C, 2007]. The analytic expression for superconducting, antiferromagnetism and lattice strain order parameters are calculated and solved self-consistently. The interplay of these order parameters is investigated considering the calculated density of states (DOSs) of the conduction electrons. The DOS displays multiple gap structures with multiple peaks. It is suggested that the tunneling conductance data obtained from the scanning tunneling microscopy (STM) measurements could be interpreted by using the quasi-particle bands calculated from our model Hamiltonian. We have discussed the mechanism to calculate the order parameters from the conductance data.

  11. Primary transitions between the yrast superdeformed band and low-lying normal deformed states in {sup 194}Pb

    Energy Technology Data Exchange (ETDEWEB)

    Hauschild, K.; Bernstein, L.A.; Becker, J.A. [Lawrence Livermore National Lab., CA (United States)] [and others

    1996-12-31

    The observation of one-step `primary` gamma-ray transitions directly linking the superdeformed (SD) states to the normal deformed (ND) low-lying states of known excitation energies (E{sub x}), spins and parities (J{sup {pi}}) is crucial to determining the E{sub x} and J{sup {pi}} of the SD states. With this knowledge one can begin to address some of the outstanding problems associated with SD nuclei, such as the identical band issue, and one can also place more stringent restrictions on theoretical calculations which predict SD states and their properties. Brinkman, et al., used the early implementation of the GAMMASPHERE spectrometer array (32 detectors) and proposed a single, candidate {gamma} ray linking the {sup 194}Pb yrast SD band to the low-lying ND states in {sup 194}Pb. Using 55 detectors in the GAMMASPHERE array Khoo, et al., observed multiple links between the yrast SD band in {sup 194}Hg and the low-lying level scheme and conclusively determined E{sub x} and J of the yrast SD states. Here the authors report on an experiment in which Gammasphere with 88 detectors was used and the E{sub x} and J{sup {pi}} values of the yrast SD states in {sup 194}Pb were uniquely determined. Twelve one-step linking transitions between the yrast SD band and low-lying states in {sup 194}Pb have been identified, including the transition proposed by Brinkman. These transitions have been placed in the level scheme of {sup 194}Pb using coincidence relationships and agreements between the energies of the primary transitions and the energy differences in level spacings. Furthermore, measurements of angular asymmetries have yielded the multipolarities of the primaries which have allowed J{sup {pi}} assignments of the {sup 194}Pb SD states to be unambiguously determined for the first time without a priori assumptions about the character of SD bands. A study performed in parallel to this work using the EUROGAM-II array reports similar, but somewhat less extensive, results.

  12. High-resolution mapping of 1D and 2D dose distributions using X-band electron paramagnetic resonance imaging

    International Nuclear Information System (INIS)

    Kolbun, N.; Lund, E.; Adolfsson, E.; Gustafsson, H.

    2014-01-01

    Electron paramagnetic resonance imaging (EPRI) was performed to visualise 2D dose distributions of homogeneously irradiated potassium dithionate tablets and to demonstrate determination of 1D dose profiles along the height of the tablets. Mathematical correction was applied for each relative dose profile in order to take into account the inhomogeneous response of the resonator using X-band EPRI. The dose profiles are presented with the spatial resolution of 0.6 mm from the acquired 2D images; this value is limited by pixel size, and 1D dose profiles from 1D imaging with spatial resolution of 0.3 mm limited by the intrinsic line-width of potassium dithionate. In this paper, dose profiles from 2D reconstructed electron paramagnetic resonance (EPR) images using the Xepr software package by Bruker are focussed. The conclusion is that using potassium dithionate, the resolution 0.3 mm is sufficient for mapping steep dose gradients if the dosemeters are covering only ±2 mm around the centre of the resonator. (authors)

  13. A Compact 5 MeV S-Band Electron Linac Based X-Ray Source for Industrial Radiography

    CERN Document Server

    Auditore, Lucrezia; De Pasquale, Domenico; Emanuele, Umberto; Italiano, Antonio; Trifirò, Antonio; Trimarchi, Marina

    2005-01-01

    A compact and reliable X-ray source, based on a 5 MeV, 1 kW, S-band electron linac, has been set up at the Dipartimento di Fisica, Universit\\'a di Messina. This source, coupled with a GOS scintillator screen and a CCD camera, represents an innovative transportable system for industrial radiography and X-ray tomography. Optimization of the parameters influencing the e-gamma conversion and the X-ray beam characteristics have been studied by means of the MCNP-4C2 code. The converter choice is the result of the study of the e-gamma conversion performances for different materials and materials thicknesses. Also the converter position with respect to the linac exit window was studied. The chosen converter consists in a Ta-Cu target inserted close to the linac window. The Cu layer acts as a filter both on the electrons from the source and on the low energy X-rays. The X-ray beam angular profile was studied by means of GafChromic films with and without collimation. In the final source project, a collimation system pr...

  14. A study of the valence shell electronic states of s-triazine by photoabsorption spectroscopy and ab initio calculations

    Energy Technology Data Exchange (ETDEWEB)

    Holland, D.M.P., E-mail: david.holland@stfc.ac.uk [Daresbury Laboratory, Daresbury, Warrington, Cheshire WA4 4AD (United Kingdom); Shaw, D.A. [Daresbury Laboratory, Daresbury, Warrington, Cheshire WA4 4AD (United Kingdom); Stener, M.; Decleva, P. [Dipartimento di Scienze Chimiche e Farmaceutiche, Università degli Studi di Trieste, Via L. Giorgieri, I-34127 Trieste (Italy); Consorzio Interuniversitario Nazionale per la Scienze e Tecnologia dei Materiali, INSTM, Unità di Trieste (Italy); CNR-IOM, Trieste (Italy); Coriani, S. [Dipartimento di Scienze Chimiche e Farmaceutiche, Università degli Studi di Trieste, Via L. Giorgieri, I-34127 Trieste (Italy); Consorzio Interuniversitario Nazionale per la Scienze e Tecnologia dei Materiali, INSTM, Unità di Trieste (Italy); Aarhus Institute of Advanced Studies, Aarhus University, 8000 Aarhus C (Denmark)

    2016-09-30

    Highlights: • The valence shell photoabsorption spectrum of s-triazine has been measured. • Electronic structure calculated with TDDFT and coupled cluster approaches. • Assignments proposed for Rydberg and valence states. • Mixing between Rydberg and valence states important. - Abstract: The absolute photoabsorption cross section of s-triazine has been measured between 4 and 40 eV, and is dominated by bands associated with valence states. Structure due to Rydberg excitations is both weak and irregular. Jahn-Teller interactions affect the vibronic structure observed in the Rydberg absorption bands due to excitation from the 1e″ or 6e′ orbitals. The interpretation of the experimental spectrum has been guided by transition energies and oscillator strengths, for Rydberg and valence states, calculated with the time-dependent version of density functional theory and with the coupled cluster linear response approach. The theoretical studies indicate that Rydberg/Rydberg and Rydberg/valence mixing is important.

  15. Single crystal growth and electronic states in RCu2Sb2

    International Nuclear Information System (INIS)

    Dung, Nguyen Duc; Takeda, Yuji; Ota, Yuuki; Ishikura, Tatsuro; Sugiyama, Kiyohiro; Settai, Rikio; Onuki, Yoshichika; Matsuda, Tatsuma D.; Haga, Yoshinori; Takeuchi, Tetsuya; Harima, Hisatomo; Goto, Saori; Mitsumoto, Keisuke; Akatsu, Mitsuhiro; Nemoto, Yuichi; Goto, Terutaka

    2009-01-01

    A series of ternary compounds RCu 2 Si 2 (R: rare earth) has been grown in single-crystalline form by the flux method. The magnetic and electronic properties of these compounds were investigated by measuring the electrical receptivity, specific heat, magnetization, thermal expansion, ultrasonic and dHvA measurements. The anisotropy in susceptibility and magnetization is relatively small in RCu 2 Si 2 , reflecting the small splitting energy of the 4f electronic state by the crystalline electric field. The quadrupolar interaction most likely plays an important role in the relatively high antiferromagnetic ordering temperature in PrCu 2 Si 2 . Characteristic features of the observed Fermi surfaces in YbCu 2 Si 2 and YbCu 2 Ge 2 are discussed on the basis of the band calculations. (author)

  16. Trapped electronic states in YAG crystal excited by femtosecond radiation

    Energy Technology Data Exchange (ETDEWEB)

    Zavedeev, E.V.; Kononenko, V.V.; Konov, V.I. [General Physics Institute of RAS, Moscow (Russian Federation); National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow (Russian Federation)

    2017-07-15

    The excitation of an electronic subsystem of an yttrium aluminum garnet by 800 nm femtosecond radiation was studied theoretically and experimentally. The spatio-temporal dynamics of the refractive index (n) inside the beam waist was explored by means of the pump-probe interferometric technique with a submicron resolution. The observed increase in n indicated the formation of bound electronic states relaxed for ∝ 150 ps. We showed that the experimental data agreed with the computational simulation based on the numerical solution of the nonlinear Schroedinger equation only if these transient states were considered to arise from a direct light-induced process but not from the decay of radiatively generated free-electron-hole pairs. (orig.)

  17. Ground-state electronic structure of actinide monocarbides and mononitrides

    DEFF Research Database (Denmark)

    Petit, Leon; Svane, Axel; Szotek, Z.

    2009-01-01

    The self-interaction corrected local spin-density approximation is used to investigate the ground-state valency configuration of the actinide ions in the actinide monocarbides, AC (A=U,Np,Pu,Am,Cm), and the actinide mononitrides, AN. The electronic structure is characterized by a gradually increa...

  18. Electron beam charge state amplifier (EBQA)--a conceptual evaluation

    International Nuclear Information System (INIS)

    Dooling, J. C.

    1998-01-01

    A concept is presented for stripping low-energy, radioactive ions from 1+ to higher charge states. Referred to as an Electron Beam Charge State Amplifier (EBQA), this device accepts a continuous beam of singly-charged, radioactive ions and passes them through a high-density electron beam confined by a solenoidal magnetic field. Singly-charged ions may be extracted from standard Isotope-Separator-Online (ISOL) sources. An EBQA is potentially useful for increasing the charge state of ions prior to injection into post-acceleration stages at ISOL radioactive beam facilities. The stripping efficiency from q=1+ to 2+ (η 12 ) is evaluated as a function of electron beam radius at constant current with solenoid field, injected ion energy, and ion beam emittance used as parameters. Assuming a 5 keV, 1 A electron beam, η 12 = 0.38 for 0.1 keV, 132 Xe ions passing through an 8 Tesla solenoid, 1 m in length. Multi-pass configurations to achieve 3+ or 4+ charge states are also conceivable. The calculated efficiencies depend inversely on the initial ion beam emittances. The use of a helium-buffer-gas, ion-guide stage to improve the brightness of the 1+ beams [1] may enhance the performance of an EBQA

  19. Inter-spin distance determination using L-band (1-2 GHz) non-adiabatic rapid sweep electron paramagnetic resonance (NARS EPR)

    Science.gov (United States)

    Kittell, Aaron W.; Hustedt, Eric J.; Hyde, James S.

    2014-01-01

    Site-directed spin-labeling electron paramagnetic resonance (SDSL EPR) provides insight into the local structure and motion of a spin probe strategically attached to a molecule. When a second spin is introduced to the system, macromolecular information can be obtained through measurement of inter-spin distances either by continuous wave (CW) or pulsed electron double resonance (ELDOR) techniques. If both methodologies are considered, inter-spin distances of 8 to 80 Å can be experimentally determined. However, there exists a region at the upper limit of the conventional X-band (9.5 GHz) CW technique and the lower limit of the four-pulse double electron-electron resonance (DEER) experiment where neither method is particularly reliable. The work presented here utilizes L-band (1.9 GHz) in combination with non-adiabatic rapid sweep (NARS) EPR to address this opportunity by increasing the upper limit of the CW technique. Because L-band linewidths are three to seven times narrower than those at X-band, dipolar broadenings that are small relative to the X-band inhomogeneous linewidth become observable, but the signal loss due to the frequency dependence of the Boltzmann factor, has made L-band especially challenging. NARS has been shown to increase sensitivity by a factor of five, and overcomes much of this loss, making L-band distance determination more feasible [1]. Two different systems are presented and distances of 18–30 Å have been experimentally determined at physiologically relevant temperatures. Measurements are in excellent agreement with a helical model and values determined by DEER. PMID:22750251

  20. Interfacial electron-transfer equilibria and flat-band potentials of α-Fe2O3 and TiO2 colloids studied by pulse radiolysis

    International Nuclear Information System (INIS)

    Dimitrijevic, N.M.; Savic, D.; Micic, O.I.; Nozik, A.J.

    1984-01-01

    The kinetics and equilibria of electron transfer between methylviologen cation radicals and α-Fe 2 O 3 or TiO 2 colloidal particles were studied with the pulse-radiolysis technique. The rates of electron transfer to both colloids are lower than those predicted for a diffusion-controlled reaction. For higher pHs (TiO 2 , pH > 2; α-Fe 2 O 3 , pH > 9) the established equilibrium MV + in equilibrium MV 2+ + (e - )/sub coll/ is strongly influenced by the MV 2+ concentration and pH. The MV + equilibrium concentration can be exploited to derive the flat-band potential of the semiconductor colloids. The method for determining the flat-band potential of the particles is independent of whether the injected electrons are free or trapped, and whether the electrons raise the bulk Fermi level toward the conduction band or just produce a space charge. The flat-band potentials for both colloids appear to be somewhat more negative (-0.1 to -0.2 V) than the corresponding single-crystal electrodes. Also, the flat-band potentials become slightly more negative with increasing radiation dose (initial MV + concentration). The effect of absorbed radiation dose is explained by the corresponding changes in the ratio of oxidized to reduced forms of the redox couple, which in turn changes the adsorbed ionic charge on the semiconductor surface. For colloidal particles of TiO 2 stabilized by poly(vinyl alcohol) (PVA), the flat-band potentials were almost the same as those for PVA-free TiO 2 sols. The decrease of particle diameter from 800 to 70 A does not affect the value of the flat-band potentials for TiO 2 and α-Fe 2 O 3 colloids. 28 references, 9 figures

  1. Influence of scattering processes on electron quantum states in nanowires

    Directory of Open Access Journals (Sweden)

    Pozdnyakov Dmitry

    2007-01-01

    Full Text Available AbstractIn the framework of quantum perturbation theory the self-consistent method of calculation of electron scattering rates in nanowires with the one-dimensional electron gas in the quantum limit is worked out. The developed method allows both the collisional broadening and the quantum correlations between scattering events to be taken into account. It is an alternativeper seto the Fock approximation for the self-energy approach based on Green’s function formalism. However this approach is free of mathematical difficulties typical to the Fock approximation. Moreover, the developed method is simpler than the Fock approximation from the computational point of view. Using the approximation of stable one-particle quantum states it is proved that the electron scattering processes determine the dependence of electron energy versus its wave vector.

  2. On the bonding nature of electron states for the Fe-Mo double perovskite

    Energy Technology Data Exchange (ETDEWEB)

    Carvajal, E.; Cruz-Irisson, M. [ESIME-Culhuacán, Instituto Politécnico Nacional, Av. Santa Ana 1000, C.P. 04430, México, D.F. (Mexico); Oviedo-Roa, R. [Programa de Investigación en Ingeniería Molecular, Instituto Mexicano del Petróleo, Eje Central Lázaro Cárdenas Norte 152, C.P. 07730, México, D.F. (Mexico); Navarro, O. [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, A.P. 70-360, 04510, México, D.F. (Mexico)

    2014-05-15

    The electronic transport as well as the effect of an external magnetic field has been investigated on manganese-based materials, spinels and perovskites. Potential applications of double perovskites go from magnetic sensors to electrodes in solid-oxide fuel cells; besides the practical interests, it is known that small changes in composition modify radically the physical properties of double perovskites. We have studied the Sr{sub 2}FeMoO{sub 6} double perovskite compound (SFMO) using first-principles density functional theory. The calculations were done within the generalized gradient approximation (GGA) scheme with the Perdew-Burke-Ernzerhof (PBE) functional. We have made a detailed analysis of each electronic state and the charge density maps around the Fermi level. For the electronic properties of SFMO it was used a primitive cell, for which we found the characteristic half-metallic behavior density of states composed by e{sub g} and t{sub 2g} electrons from Fe and Mo atoms. Those peaks were tagged as bonding or antibonding around the Fermi level at both, valence and conduction bands.

  3. Development of an automatic frequency control system for an X-band (=9300 MHz) RF electron linear accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Cha, Sungsu, E-mail: sscha@kaeri.re.kr [Nuclear Data Center, Korea Atomic Energy Research Institute (KAERI), Daejeon 34057 (Korea, Republic of); Kim, Yujong; Lee, Byung Cheol [Nuclear Data Center, Korea Atomic Energy Research Institute (KAERI), Daejeon 34057 (Korea, Republic of); Park, Hyung Dal [Radiation Technology eXcellence(RTX), Daejeon 34025 (Korea, Republic of); Lee, Seung Hyun [Department of Energy Science, Sungkyunkwan University(SKKU), Suwon 16419 (Korea, Republic of); Buaphad, Pikad [Nuclear Data Center, Korea Atomic Energy Research Institute (KAERI), Daejeon 34057 (Korea, Republic of); Radiation Technology eXcellence(RTX), Daejeon 34025 (Korea, Republic of); Accelerator and Nuclear Fusion Physical Engineering, University of Science and Technology(UST), Daejeon 34113 (Korea, Republic of)

    2017-05-21

    KAERI is developing a 6 MeV X-band radio frequency (RF) electron linear accelerator for medical purposes. The proposed X-band accelerator consists of an e-gun, an accelerating structure, two solenoid magnets, two steering magnets, a magnetron, a modulator, and an automatic frequency control (AFC) system. The accelerating structure of the component consists of oxygen-free high-conductivity copper (OFHC). Therefore, the ambient temperature changes the volume, and the resonance frequency of the accelerating structure also changes. If the RF frequency of a 9300 MHz magnetron and the resonance frequency of the accelerating structure do not match, it can degrade the performance. That is, it will decrease the output power, lower the beam current, decrease the X-ray dose rate, increase the reflection power, and result in unstable operation of the accelerator. Accelerator operation should be possible at any time during all four seasons. To prevent humans from being exposed to radiation when it is operated, the accelerator should also be operable through remote monitoring and remote control. Therefore, the AFC system is designed to meet these requirements; it is configured based on the concept of a phase-locked loop (PLL) model, which includes an RF section, an intermediate frequency (IF) [1-3] section, and a local oscillator (LO) section. Some resonance frequency controllers use a DC motor, chain, and potentiometer to store the position and tune the frequency [4,5]. Our AFC system uses a step motor to tune the RF frequency of the magnetron. The maximum tuning turn number of our magnetron frequency tuning shaft is ten. Since the RF frequency of our magnetron is 9300±25 MHz, it gives 5 MHz (∵±25 MHz/10 turns → 50 MHz/10 turns =5 MHz/turn) frequency tuning per turn. The rotation angle of our step motor is 0.72° per step and the total step number per one rotation is 360°/0.72°=500 steps. Therefore, the tuning range per step is 10 kHz/step (=5 MHz per turn/500 steps per

  4. Development of an automatic frequency control system for an X-band (=9300 MHz) RF electron linear accelerator

    Science.gov (United States)

    Cha, Sungsu; Kim, Yujong; Lee, Byung Cheol; Park, Hyung Dal; Lee, Seung Hyun; Buaphad, Pikad

    2017-05-01

    KAERI is developing a 6 MeV X-band radio frequency (RF) electron linear accelerator for medical purposes. The proposed X-band accelerator consists of an e-gun, an accelerating structure, two solenoid magnets, two steering magnets, a magnetron, a modulator, and an automatic frequency control (AFC) system. The accelerating structure of the component consists of oxygen-free high-conductivity copper (OFHC). Therefore, the ambient temperature changes the volume, and the resonance frequency of the accelerating structure also changes. If the RF frequency of a 9300 MHz magnetron and the resonance frequency of the accelerating structure do not match, it can degrade the performance. That is, it will decrease the output power, lower the beam current, decrease the X-ray dose rate, increase the reflection power, and result in unstable operation of the accelerator. Accelerator operation should be possible at any time during all four seasons. To prevent humans from being exposed to radiation when it is operated, the accelerator should also be operable through remote monitoring and remote control. Therefore, the AFC system is designed to meet these requirements; it is configured based on the concept of a phase-locked loop (PLL) model, which includes an RF section, an intermediate frequency (IF) [1-3] section, and a local oscillator (LO) section. Some resonance frequency controllers use a DC motor, chain, and potentiometer to store the position and tune the frequency [4,5]. Our AFC system uses a step motor to tune the RF frequency of the magnetron. The maximum tuning turn number of our magnetron frequency tuning shaft is ten. Since the RF frequency of our magnetron is 9300±25 MHz, it gives 5 MHz (∵±25 MHz/10 turns → 50 MHz/10 turns =5 MHz/turn) frequency tuning per turn. The rotation angle of our step motor is 0.72° per step and the total step number per one rotation is 360°/0.72°=500 steps. Therefore, the tuning range per step is 10 kHz/step (=5 MHz per turn/500 steps per

  5. Development of an automatic frequency control system for an X-band (=9300 MHz) RF electron linear accelerator

    International Nuclear Information System (INIS)

    Cha, Sungsu; Kim, Yujong; Lee, Byung Cheol; Park, Hyung Dal; Lee, Seung Hyun; Buaphad, Pikad

    2017-01-01

    KAERI is developing a 6 MeV X-band radio frequency (RF) electron linear accelerator for medical purposes. The proposed X-band accelerator consists of an e-gun, an accelerating structure, two solenoid magnets, two steering magnets, a magnetron, a modulator, and an automatic frequency control (AFC) system. The accelerating structure of the component consists of oxygen-free high-conductivity copper (OFHC). Therefore, the ambient temperature changes the volume, and the resonance frequency of the accelerating structure also changes. If the RF frequency of a 9300 MHz magnetron and the resonance frequency of the accelerating structure do not match, it can degrade the performance. That is, it will decrease the output power, lower the beam current, decrease the X-ray dose rate, increase the reflection power, and result in unstable operation of the accelerator. Accelerator operation should be possible at any time during all four seasons. To prevent humans from being exposed to radiation when it is operated, the accelerator should also be operable through remote monitoring and remote control. Therefore, the AFC system is designed to meet these requirements; it is configured based on the concept of a phase-locked loop (PLL) model, which includes an RF section, an intermediate frequency (IF) [1-3] section, and a local oscillator (LO) section. Some resonance frequency controllers use a DC motor, chain, and potentiometer to store the position and tune the frequency [4,5]. Our AFC system uses a step motor to tune the RF frequency of the magnetron. The maximum tuning turn number of our magnetron frequency tuning shaft is ten. Since the RF frequency of our magnetron is 9300±25 MHz, it gives 5 MHz (∵±25 MHz/10 turns → 50 MHz/10 turns =5 MHz/turn) frequency tuning per turn. The rotation angle of our step motor is 0.72° per step and the total step number per one rotation is 360°/0.72°=500 steps. Therefore, the tuning range per step is 10 kHz/step (=5 MHz per turn/500 steps per

  6. Foucault's Pendulum, Analog for an Electron Spin State

    Science.gov (United States)

    Linck, Rebecca

    2012-11-01

    The classical Lagrangian that describes the coupled oscillations of Foucault's pendulum presents an interesting analog to an electron's spin state in an external magnetic field. With a simple modification, this classical Lagrangian yields equations of motion that directly map onto the Schrodinger-Pauli Equation. This analog goes well beyond the geometric phase, reproducing a broad range of behavior from Zeeman-like frequency splitting to precession of the spin state. By demonstrating that unmeasured spin states can be fully described in classical terms, this research opens the door to using the tools of classical physics to examine an inherently quantum phenomenon.

  7. Two Electron States in a Quantum Ring on a Sphere

    International Nuclear Information System (INIS)

    Kazaryan, Eduard M.; Shahnazaryan, Vanik A.; Sarkisyan, Hayk A.

    2014-01-01

    Two electron states in a quantum ring on a spherical surface are discussed. The problem is discussed within the frameworks of Russell–Saunders coupling scheme, that is, the spin–orbit coupling is neglected. Treating Coulomb interaction as a perturbation, the energy correction for different states is calculated. The dependence of the Coulomb interaction energy on external polar boundary angle of quantum ring is obtained. In analogue with the helium atom the concept of states exchange time is introduced, and its dependence on geometrical parameters of the ring is shown. (author)

  8. Analytical realization of finite-size scaling for Anderson localization. Does the band of critical states exist for d > 2?

    International Nuclear Information System (INIS)

    Suslov, I. M.

    2006-01-01

    An analytical realization is suggested for the finite-size scaling algorithm based on the consideration of auxiliary quasi-1D systems. Comparison of the obtained analytical results with the results of numerical calculations indicates that the Anderson transition point splits into the band of critical states. This conclusion is supported by direct numerical evidence (Edwards, Thouless, 1972; Last, Thouless, 1974; Schreiber, 1985). The possibility of restoring the conventional picture still exists but requires a radical reinterpretation of the raw numerical data

  9. Mixing of ground-state rotational and gamma and beta vibrational bands in the region A>=228

    Energy Technology Data Exchange (ETDEWEB)

    Mittal, R; Sahota, H S [Punjabi Univ., Patiala (India). Dept. of Physics

    1983-06-21

    The mixing of beta, gamma and ground-state bands has been investigated through the experimental determination of mixing parameters Zsub(..gamma..) and Zsub(..beta gamma..). These Zsub(..gamma..) values have been compared with the theoretical calculations of this parameter from the solutions of time-dependent HFB equations on the adiabatic and nonadiabatic assumptions. The experimental values are in better agreement with the results obtained under the nonadiabatic assumption, valid for small deviations from the spherical symmetry.

  10. Cytotoxicity Comparison of the Nanoparticles Deposited on Latex Rubber Bands between the Original and Stretched State

    Directory of Open Access Journals (Sweden)

    Jung-Hwan Lee

    2014-01-01

    Full Text Available Understanding the biocompatibility of nanoparticles in dental materials is essential for their safe usage in the oral cavity. In this study, we investigated whether nanoparticles deposited on orthodontic latex rubber bands are involved in the induction of cytotoxicity. A method of stretching to three times (“3L” the length of the latex rubber bands was employed to detach the particles using the original length (“L” for comparison. The cytotoxicity tests were performed on extracts with mouse fibroblasts (L929 and human gingival fibroblasts (HGFs. Fourier transform infrared spectroscopy, ion chromatography, elemental analysis, and inductively coupled plasma mass spectrometry (ICP-MS were performed to detect the harmful components in the extracts from rubber bands. There was a significant decrease in the cell viability in the “L” samples compared with the “3L” samples (P<0.05 in the L929 and HGF cells. This was due to the Ni single crystal nanoparticles (~50nm from the inner surface of “L” samples that were detached in the “3L” samples as well as the Zn ion (~9 ppm detected in the extract. This study revealed that the Ni nanoparticles, as well as Zn ions, were involved in the induction of cytotoxicity from the latex rubber bands.

  11. Kinetic and electron-electron energies for convex sums of ground state densities with degeneracies and fractional electron number

    Energy Technology Data Exchange (ETDEWEB)

    Levy, Mel, E-mail: ayers@mcmaster.ca, E-mail: mlevy@tulane.edu [Department of Chemistry, Duke University, Durham, North Carolina 27708 (United States); Department of Physics, North Carolina A and T State University, Greensboro, North Carolina 27411 (United States); Department of Chemistry, Tulane University, New Orleans, Louisiana 70118 (United States); Anderson, James S. M.; Zadeh, Farnaz Heidar; Ayers, Paul W., E-mail: ayers@mcmaster.ca, E-mail: mlevy@tulane.edu [Department of Chemistry and Chemical Biology, McMaster University, Hamilton, Ontario (Canada)

    2014-05-14

    Properties of exact density functionals provide useful constraints for the development of new approximate functionals. This paper focuses on convex sums of ground-level densities. It is observed that the electronic kinetic energy of a convex sum of degenerate ground-level densities is equal to the convex sum of the kinetic energies of the individual degenerate densities. (The same type of relationship holds also for the electron-electron repulsion energy.) This extends a known property of the Levy-Valone Ensemble Constrained-Search and the Lieb Legendre-Transform refomulations of the Hohenberg-Kohn functional to the individual components of the functional. Moreover, we observe that the kinetic and electron-repulsion results also apply to densities with fractional electron number (even if there are no degeneracies), and we close with an analogous point-wise property involving the external potential. Examples where different degenerate states have different kinetic energy and electron-nuclear attraction energy are given; consequently, individual components of the ground state electronic energy can change abruptly when the molecular geometry changes. These discontinuities are predicted to be ubiquitous at conical intersections, complicating the development of universally applicable density-functional approximations.

  12. Foucault's pendulum, a classical analog for the electron spin state

    Science.gov (United States)

    Linck, Rebecca A.

    Spin has long been regarded as a fundamentally quantum phenomena that is incapable of being described classically. To bridge the gap and show that aspects of spin's quantum nature can be described classically, this work uses a classical Lagrangian based on the coupled oscillations of Foucault's pendulum as an analog for the electron spin state in an external magnetic field. With this analog it is possible to demonstrate that Foucault's pendulum not only serves as a basis for explaining geometric phase, but is also a basis for reproducing a broad range of behavior from Zeeman-like frequency splitting to precession of the spin state. By demonstrating that unmeasured electron spin states can be fully described in classical terms, this research opens the door to using the tools of classical physics to examine an inherently quantum phenomenon.

  13. Electronic states on the clean and oxygen-covered molybdenum (110) surface measured using time-of-flight momentum microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Chernov, Sergii

    2016-04-20

    Recent experiments discovered a new class of materials called topological insulators and started an extensive investigation in order to find more materials of such type and to understand and explore the opening perspectives in fundamental science and application. These materials exhibit a Dirac-type (massless) electronic state, bridging the fundamental band gap. Surprisingly, a strongly spin-polarized surface state with linear dispersion resembling that of Dirac type was found on the already well-investigated W(110) surface. This rose the question of the existence of the same non-trivial electron state on other metal surfaces. The present work describes the investigation of surface electronic states on the Mo(110) surface, their dispersion and transformation upon surface oxidation. This system is isoelectronic to the case of W(110) but due to the lower atomic number the spin-orbit interaction responsible for local band gap formation is substantially decreased by a factor of 5. The Mo(110) surface was shown to exhibit a linearly dispersing state quite similar to the one on W(110), but within a smaller energy range of 120 meV, with the Dirac point lying in the center of a local band gap in k-space. The experimental investigations were performed with the help of momentum microscopy, using a Ti:sapphire laser in the lab and synchrotron radiation at BESSY II, Berlin. The results show good agreement with theoretical calculations of the band structure and photoemission patterns for clean Mo(110). The fully parallel 3D acquisition scheme allowed to visualize the full surface Brillouin zone of the sample up to few eV binding energy within a single exposure of typically less than 30 min. This opens the door to future time-resolved experiments with maximum detection efficiency.

  14. Electronic states on the clean and oxygen-covered molybdenum (110) surface measured using time-of-flight momentum microscopy

    International Nuclear Information System (INIS)

    Chernov, Sergii

    2016-01-01

    Recent experiments discovered a new class of materials called topological insulators and started an extensive investigation in order to find more materials of such type and to understand and explore the opening perspectives in fundamental science and application. These materials exhibit a Dirac-type (massless) electronic state, bridging the fundamental band gap. Surprisingly, a strongly spin-polarized surface state with linear dispersion resembling that of Dirac type was found on the already well-investigated W(110) surface. This rose the question of the existence of the same non-trivial electron state on other metal surfaces. The present work describes the investigation of surface electronic states on the Mo(110) surface, their dispersion and transformation upon surface oxidation. This system is isoelectronic to the case of W(110) but due to the lower atomic number the spin-orbit interaction responsible for local band gap formation is substantially decreased by a factor of 5. The Mo(110) surface was shown to exhibit a linearly dispersing state quite similar to the one on W(110), but within a smaller energy range of 120 meV, with the Dirac point lying in the center of a local band gap in k-space. The experimental investigations were performed with the help of momentum microscopy, using a Ti:sapphire laser in the lab and synchrotron radiation at BESSY II, Berlin. The results show good agreement with theoretical calculations of the band structure and photoemission patterns for clean Mo(110). The fully parallel 3D acquisition scheme allowed to visualize the full surface Brillouin zone of the sample up to few eV binding energy within a single exposure of typically less than 30 min. This opens the door to future time-resolved experiments with maximum detection efficiency.

  15. Relation between plasmons and the valence-band density-of-states in polymethylmethacrylate - influence of ion irradiation on damage selectivity

    International Nuclear Information System (INIS)

    Moliton, J.P.; Jussiaux, C.; Trigaud, T.; Lazzaroni, R.; Lhost, O.; Bredas, J.L.; Kihn, Y.; Sevely, J.

    1996-01-01

    A physical model is presented that aims at rationalizing the selectivity of bond breakage observed when polymethylmethacrylate is irradiated by ions in the 10-500 keV energy range. This model, previously proposed by Brandt and Ritchie, is based on electronic collective effects. The coupling between the pure plasma oscillation at omega(p) and the oscillation of free electrons at [omega(k0)(2)](1/2) makes the whole electronic population resonant at the frequency omega(rp) = (omega(p)(2) + [omega(k0)(2)])(1/2). By computing the valence-band density of states, we calculate [omega(k0)(2)] and then deduce the theoretical value of omega(rp). On the other hand, we provide an experimental measurement of omega(rp) and study its dependence on ion fluence by electron-energy-loss spectroscopy. The validity of the model of Brandt and Ritchie is then discussed in the light of both theoretical and experimental data. (author)

  16. Chemical modulation of electronic structure at the excited state

    Science.gov (United States)

    Li, F.; Song, C.; Gu, Y. D.; Saleem, M. S.; Pan, F.

    2017-12-01

    Spin-polarized electronic structures are the cornerstone of spintronics, and have thus attracted a significant amount of interest; in particular, researchers are looking into how to modulate the electronic structure to enable multifunctional spintronics applications, especially in half-metallic systems. However, the control of the spin polarization has only been predicted in limited two-dimensional systems with spin-polarized Dirac structures and is difficult to achieve experimentally. Here, we report the modulation of the electronic structure in the light-induced excited state in a typical half-metal, L a1 /2S r1 /2Mn O3 -δ . According to the spin-transport measurements, there appears a light-induced increase in magnetoresistance due to the enhanced spin scattering, which is closely associated with the excited spin polarization. Strikingly, the light-induced variation can be enhanced via alcohol processing and reduced by oxygen annealing. X-ray photoelectron spectroscopy measurements show that in the chemical process, a redox reaction occurs with a change in the valence of Mn. Furthermore, first-principles calculations reveal that the change in the valence of Mn alters the electronic structure and consequently modulates the spin polarization in the excited state. Our findings thus report a chemically tunable electronic structure, demonstrating interesting physics and the potential for multifunctional applications and ultrafast spintronics.

  17. Single-electron states near a current-carrying core

    International Nuclear Information System (INIS)

    Masale, M.

    2004-01-01

    The energy spectrum of an electron confined near a current-carrying core is obtained as a function of the azimuthal applied magnetic field within the effective-mass approximation. The double degeneracy of the non-zero electron's axial wave number (k z ) states is lifted by the current-induced magnetic field while that of the non-zero azimuthal quantum number (m) states is preserved. A further analysis is the evaluations of the oscillator strengths for optical transitions involving the lowest-order pair of the electron's energy subbands within the dipole approximation. The radiation field is taken as that of elliptically polarized light incident along the core axis. In this polarization and within the dipole approximation, the allowed transitions are only those governed by the following specific selection rules. The azimuthal quantum numbers of the initial and final states must differ by unity while the electron's axial wave number is conserved. The azimuthal magnetic field is also found to lift the multiple degeneracies of the k z ≠0 interaction integrals as well as those of the oscillator strengths for optical transitions

  18. Evolution with Composition of the d-Band Density of States at the Fermi Level in Highly Spin Polarized Co1-xFexS2

    Science.gov (United States)

    Kuhns, P. L.; Hoch, M. J. R.; Reyes, A. P.; Moulton, W. G.; Wang, L.; Leighton, C.

    2006-04-01

    Highly spin polarized (SP) and half-metallic ferromagnetic systems are of considerable current interest and of potential importance for spintronic applications. Recent work has demonstrated that Co1-xFexS2 is a highly polarized ferromagnet (FM) where the spin polarization can be tuned by alloy composition. Using Co59 FM-NMR as a probe, we have measured the low-temperature spin relaxation in this system in magnetic fields from 0 to 1.0 T for 0≤x≤0.3. The Co59 spin-lattice relaxation rates follow a linear T dependence. Analysis of the data, using expressions for a FM system, permits information to be obtained on the d-band density of states at the Fermi level. The results are compared with independent density of states values inferred from electronic specific heat measurements and band structure calculations. It is shown that FM-NMR can be an important method for investigating highly SP systems.

  19. Temperature-Induced Large Broadening and Blue Shift in the Electronic Band Structure and Optical Absorption of Methylammonium Lead Iodide Perovskite.

    Science.gov (United States)

    Yang, Jia-Yue; Hu, Ming

    2017-08-17

    The power conversion efficiency of hybrid halide perovskite solar cells is profoundly influenced by the operating temperature. Here we investigate the temperature influence on the electronic band structure and optical absorption of cubic CH 3 NH 3 PbI 3 from first-principles by accounting for both the electron-phonon interaction and thermal expansion. Within the framework of density functional perturbation theory, the electron-phonon coupling induces slightly enlarged band gap and strongly broadened electronic relaxation time as temperature increases. The large broadening effect is mainly due to the presence of cation organic atoms. Consequently, the temperature-dependent absorption peak exhibits blue-shift position, decreased amplitude, and broadened width. This work uncovers the atomistic origin of temperature influence on the optical absorption of cubic CH 3 NH 3 PbI 3 and can provide guidance to design high-performance hybrid halide perovskite solar cells at different operating temperatures.

  20. Antidiabetic Theory of Superconducting State Transition: Phonons and Strong Electron Correlations the Old Physics and New Aspects

    International Nuclear Information System (INIS)

    Banacky, P.

    2010-01-01

    Complex electronic ground state of molecular and solid state system is analyzed on the ab initio level beyond the adiabatic Born-Oppenheimer approximation (BOA). The attention is focused on the band structure fluctuation (BSF) at Fermi level, which is induced by electron-phonon coupling in superconductors, and which is absent in the non-superconducting analogues. The BSF in superconductors results in breakdown of the adiabatic BOA. At these circumstances, chemical potential is substantially reduced and system is stabilized (effect of nuclear dynamics) in the anti adiabatic state at broken symmetry with a gap(s) in one-particle spectrum. Distorted nuclear structure has fluxional character and geometric degeneracy of the anti adiabatic ground state enables formation of mobile bipolarons in real space. It has been shown that an effective attractive e-e interaction (Cooper-pair formation) is in fact correction to electron correlation energy at transition from adiabatic into anti adiabatic ground electronic state. In this respect, Cooper-pair formation is not the primary reason for transition into superconducting state, but it is a consequence of anti adiabatic state formation. It has been shown that thermodynamic properties of system in anti adiabatic state correspond to thermodynamics of superconducting state. Illustrative application of the theory for different types of superconductors is presented.

  1. Probing the Electronic Structure and Band Gap Evolution of Titanium Oxide Clusters (TiO2)n- (n=1-10) Using Photoelectron Spectroscopy

    International Nuclear Information System (INIS)

    Zhai, Hua-jin; Wang, Lai S.

    2007-01-01

    TiO2 is a wide-band gap semiconductor and it is an important material for photocatalysis. Here we report an experimental investigation of the electronic structure of (TiO2)n clusters and how their band gap evolves as a function of size using anion photoelectron spectroscopy (PES). PES spectra of (TiO2)n- clusters for n = 1-10 have been obtained at 193 (6.424 eV) and 157 nm (7.866 eV). The high photon energy at 157 nm allows the band gap of the TiO2 clusters to be clearly revealed up to n = 10. The band gap is observed to be strongly size-dependent for n 1 appears to be localized in a tricoordinated Ti atom, creating a single Ti3+ site and making these clusters ideal molecular models for mechanistic understanding of TiO2 surface defects and photocatalytic properties

  2. On stationary states of electron beams in drift space

    International Nuclear Information System (INIS)

    Kovalev, N.F.

    2002-01-01

    The article is devoted to studying the conditions of formation and existence of virtual cathodes. The problem on stationary states of the strongly magnetized electron beams in the homogeneous drift channels is discussed. The problem on the planar and coaxial moduli of the drift spaces is considered. The possibility of existing the virtual cathodes in the coaxial tubular beams by the injection currents, smaller than the threshold ones is highly proved. The inaccuracy of results of a number of works, studying the properties of the virtual cathodes in the strongly magnetized electron beams, is shown [ru

  3. Surface study of liquid 3He using surface state electrons

    International Nuclear Information System (INIS)

    Shirahama, K.; Ito, S.; Suto, H.; Kono, K.

    1995-01-01

    We have measured the mobility of surface state electrons (SSE) on liquid 3 He, μ 3 , aiming to study the elementary surface excitations of the Fermi liquid. A gradual increase of μ 3 below 300 mK is attributed to the scattering of electrons by ripplons. Ripplons do exist in 3 He down to 100 mK. We observe an abrupt decrease of μ 3 , due to the transition to the Wigner solid (WS). The dependences of the WS conductivity and mobility on temperature and magnetic field differ from the SSE behavior on liquid 4 He

  4. Induced Rashba splitting of electronic states in monolayers of Au, Cu on a W(110) substrate

    International Nuclear Information System (INIS)

    Shikin, A M; Rybkina, A A; Rybkin, A G; Marchenko, D; Korshunov, A S; Kudasov, Yu B; Frolova, N V; Sánchez-Barriga, J; Varykhalov, A; Rader, O

    2013-01-01

    The paper sums up a theoretical and experimental investigation of the influence of the spin–orbit coupling in W(110) on the spin structure of electronic states in deposited Au and Cu monolayers. Angle-resolved photoemission spectroscopy reveals that in the case of monolayers of Au and Cu spin–orbit split bands are formed in a surface-projected gap of W(110). Spin resolution shows that these states are spin polarized and that, therefore, the spin–orbit splitting is of Rashba type. The states evolve from hybridization of W 5d, 6p-derived states with the s, p states of the deposited metal. Interaction with Au and Cu shifts the original W 5d-derived states from the edges toward the center of the surface-projected gap. The size of the spin–orbit splitting of the formed states does not correlate with the atomic number of the deposited metal and is even higher for Cu than for Au. These states can be described as W-derived surface resonances modified by hybridization with the p, d states of the adsorbed metal. Our electronic structure calculations performed in the framework of the density functional theory correlate well with the experiment and demonstrate the crucial role of the W top layer for the spin–orbit splitting. It is shown that the contributions of the spin–orbit interaction from W and Au act in opposite directions which leads to a decrease of the resulting spin–orbit splitting in the Au monolayer on W(110). For the Cu monolayer with lower spin–orbit interaction the resulting spin splitting is higher and mainly determined by the W. (paper)

  5. Amorphization-induced strong localization of electronic states in CsPbBr3 and CsPbCl3 studied by optical absorption measurements

    Science.gov (United States)

    Kondo, S.; Sakai, T.; Tanaka, H.; Saito, T.

    1998-11-01

    Optical absorption spectra of amorphous CsPbX3 films (X=Br,Cl) are characterized by two Gaussian bands near the fundamental edge, with the optical energy gap largely blueshifted and the absorption intensity strongly reduced as compared with the crystalline films. The peak energies of the bands are close to those of the A and C bands of Pb-doped alkali halides. The spectral features are discussed in terms of a molecular orbital theory based on a quasicomplex Pb2+(X-)6 model similar to the complex model for the doped alkali halides. It is shown that not only Pb2+ 6s and 6p extended states near the band edges but also X- p states contributing to upper valence bands are localized by amorphization. The transitions from the localized Pb2+ 6s to 6p states produce the spin-orbit allowed 3P1 and dipole allowed 1P1 states responsible for the two Gaussians. The localized X- p states lie deeper in energy than the localized Pb2+ 6s state and only contribute to higher-energy absorption above the Gaussian bands, giving the reason for the reduced absorption near the fundamental edge. The blueshift of the optical energy gap is attributed to the disappearance of k dispersions for these one-electron states.

  6. Spectroscopy of 9Be and observation of neutron halo structure in the states of positive parity rotational band

    Directory of Open Access Journals (Sweden)

    Demyanova A.S.

    2014-03-01

    Full Text Available The differential cross sections of the 9Be + α inelastic scattering at 30 MeV were measured at the tandem of Tsukuba University. All the known states of 9Be up to energies ~ 12 MeV were observed and decomposed into three rotational bands, each of them having a cluster structure consisting of a 8Be core plus a valence neutron in one of the sub-shells: p3/2−, s1/2+ and p1/2−. Existence of a neutron halo in the positive parity states was confirmed.

  7. X-band EPR setup with THz light excitation of Novosibirsk Free Electron Laser: Goals, means, useful extras

    Science.gov (United States)

    Veber, Sergey L.; Tumanov, Sergey V.; Fursova, Elena Yu.; Shevchenko, Oleg A.; Getmanov, Yaroslav V.; Scheglov, Mikhail A.; Kubarev, Vitaly V.; Shevchenko, Daria A.; Gorbachev, Iaroslav I.; Salikova, Tatiana V.; Kulipanov, Gennady N.; Ovcharenko, Victor I.; Fedin, Matvey V.

    2018-03-01

    Electron Paramagnetic Resonance (EPR) station at the Novosibirsk Free Electron Laser (NovoFEL) user facility is described. It is based on X-band (∼9 GHz) EPR spectrometer and operates in both Continuous Wave (CW) and Time-Resolved (TR) modes, each allowing detection of either direct or indirect influence of high-power NovoFEL light (THz and mid-IR) on the spin system under study. The optics components including two parabolic mirrors, shutters, optical chopper and multimodal waveguide allow the light of NovoFEL to be directly fed into the EPR resonator. Characteristics of the NovoFEL radiation, the transmission and polarization-retaining properties of the waveguide used in EPR experiments are presented. The types of proposed experiments accessible using this setup are sketched. In most practical cases the high-power radiation applied to the sample induces its rapid temperature increase (T-jump), which is best visible in TR mode. Although such influence is a by-product of THz radiation, this thermal effect is controllable and can deliberately be used to induce and measure transient signals of arbitrary samples. The advantage of tunable THz radiation is the absence of photo-induced processes in the sample and its high penetration ability, allowing fast heating of a large portion of virtually any sample and inducing intense transients. Such T-jump TR EPR spectroscopy with THz pulses has been previewed for the two test samples, being a useful supplement for the main goals of the created setup.

  8. X-band EPR setup with THz light excitation of Novosibirsk Free Electron Laser: Goals, means, useful extras.

    Science.gov (United States)

    Veber, Sergey L; Tumanov, Sergey V; Fursova, Elena Yu; Shevchenko, Oleg A; Getmanov, Yaroslav V; Scheglov, Mikhail A; Kubarev, Vitaly V; Shevchenko, Daria A; Gorbachev, Iaroslav I; Salikova, Tatiana V; Kulipanov, Gennady N; Ovcharenko, Victor I; Fedin, Matvey V

    2018-03-01

    Electron Paramagnetic Resonance (EPR) station at the Novosibirsk Free Electron Laser (NovoFEL) user facility is described. It is based on X-band (∼9 GHz) EPR spectrometer and operates in both Continuous Wave (CW) and Time-Resolved (TR) modes, each allowing detection of either direct or indirect influence of high-power NovoFEL light (THz and mid-IR) on the spin system under study. The optics components including two parabolic mirrors, shutters, optical chopper and multimodal waveguide allow the light of NovoFEL to be directly fed into the EPR resonator. Characteristics of the NovoFEL radiation, the transmission and polarization-retaining properties of the waveguide used in EPR experiments are presented. The types of proposed experiments accessible using this setup are sketched. In most practical cases the high-power radiation applied to the sample induces its rapid temperature increase (T-jump), which is best visible in TR mode. Although such influence is a by-product of THz radiation, this thermal effect is controllable and can deliberately be used to induce and measure transient signals of arbitrary samples. The advantage of tunable THz radiation is the absence of photo-induced processes in the sample and its high penetration ability, allowing fast heating of a large portion of virtually any sample and inducing intense transients. Such T-jump TR EPR spectroscopy with THz pulses has been previewed for the two test samples, being a useful supplement for the main goals of the created setup. Copyright © 2018 Elsevier Inc. All rights reserved.

  9. Electron spin polarization induced by spin Hall effect in semiconductors with a linear in the momentum spin-orbit splitting of conduction band

    OpenAIRE

    Korenev, V. L.

    2005-01-01

    It is shown that spin Hall effect creates uniform spin polarization of electrons in semiconductor with a linear in the momentum spin splitting of conduction band. In turn, the profile of the non-uniform spin polarization accumulated at the edge of the sample oscillates in space even in the absence of an external magnetic field.

  10. Mapping Catalytically Relevant Edge Electronic States of MoS2

    Science.gov (United States)

    2018-01-01

    Molybdenum disulfide (MoS2) is a semiconducting transition metal dichalcogenide that is known to be a catalyst for both the hydrogen evolution reaction (HER) as well as for hydro-desulfurization (HDS) of sulfur-rich hydrocarbon fuels. Specifically, the edges of MoS2 nanostructures are known to be far more catalytically active as compared to unmodified basal planes. However, in the absence of the precise details of the geometric and electronic structure of the active catalytic sites, a rational means of modulating edge reactivity remain to be developed. Here we demonstrate using first-principles calculations, X-ray absorption spectroscopy, as well as scanning transmission X-ray microscopy (STXM) imaging that edge corrugations yield distinctive spectroscopic signatures corresponding to increased localization of hybrid Mo 4d states. Independent spectroscopic signatures of such edge states are identified at both the S L2,3 and S K-edges with distinctive spatial localization of such states observed in S L2,3-edge STXM imaging. The presence of such low-energy hybrid states at the edge of the conduction band is seen to correlate with substantially enhanced electrocatalytic activity in terms of a lower Tafel slope and higher exchange current density. These results elucidate the nature of the edge electronic structure and provide a clear framework for its rational manipulation to enhance catalytic activity. PMID:29721532

  11. Defect induced electronic states and magnetism in ball-milled graphite.

    Science.gov (United States)

    Milev, Adriyan; Dissanayake, D M A S; Kannangara, G S K; Kumarasinghe, A R

    2013-10-14

    The electronic structure and magnetism of nanocrystalline graphite prepared by ball milling of graphite in an inert atmosphere have been investigated using valence band spectroscopy (VB), core level near-edge X-ray absorption fine structure (NEXAFS) spectroscopy and magnetic measurements as a function of the milling time. The NEXAFS spectroscopy of graphite milled for 30 hours shows simultaneous evolution of new states at ~284.0 eV and at ~290.5 eV superimposed upon the characteristic transitions at 285.4 eV and 291.6 eV, respectively. The modulation of the density of states is explained by evolution of discontinuities within the sheets and along the fracture lines in the milled graphite. The magnetic measurements in the temperature interval 2-300-2 K at constant magnetic field strength show a correlation between magnetic properties and evolution of the new electronic states. With the reduction of the crystallite sizes of the graphite fragments, the milled material progressively changes its magnetic properties from diamagnetic to paramagnetic with contributions from both Pauli and Curie paramagnetism due to the evolution of new states at ~284 and ~290.5 eV, respectively. These results indicate that the magnetic behaviour of ball-milled graphite can be manipulated by changing the milling conditions.

  12. Excitation and characterization of image potential state electrons on quasi-free-standing graphene

    Science.gov (United States)

    Lin, Yi; Li, Yunzhe; Sadowski, Jerzy T.; Jin, Wencan; Dadap, Jerry I.; Hybertsen, Mark S.; Osgood, Richard M.

    2018-04-01

    We investigate the band structure of image potential states in quasi-free-standing graphene (QFG) monolayer islands using angle-resolved two-photon-photoemission spectroscopy. Direct probing by low-energy electron diffraction shows that QFG is formed following oxygen intercalation into the graphene-Ir(111) interface. Despite the apparent decoupling of the monolayer graphene from the Ir substrate, we find that the binding energy of the n =1 image potential state on these QFG islands increases by 0.17 eV, as compared to the original Gr/Ir(111) interface. We use calculations based on density-functional theory to construct an empirical, one-dimensional potential that quantitatively reproduces the image potential state binding energy and links the changes in the interface structure to the shift in energy. Specifically, two factors contribute comparably to this energy shift: a deeper potential well arising from the presence of intercalated oxygen adatoms and a wider potential well associated with the increase in the graphene-Ir distance. While image potential states have not been observed previously on QFG by photoemission, our paper now demonstrates that they may be strongly excited in a well-defined QFG system produced by oxygen intercalation. This opens an opportunity for studying the surface electron dynamics in QFG systems, beyond those found in typical nonintercalated graphene-on-substrate systems.

  13. Dynamical mean-field theory and path integral renormalisation group calculations of strongly correlated electronic states

    Energy Technology Data Exchange (ETDEWEB)

    Heilmann, D.B.

    2007-02-15

    The two-plane HUBBARD model, which is a model for some electronic properties of undoped YBCO superconductors as well as displays a MOTT metal-to-insulator transition and a metal-to-band insulator transition, is studied within Dynamical Mean-Field Theory using HIRSCH-FYE Monte Carlo. In order to find the different transitions and distinguish the types of insulator, we calculate the single-particle spectral densities, the self-energies and the optical conductivities. We conclude that there is a continuous transition from MOTT to band insulator. In the second part, ground state properties of a diagonally disordered HUBBARD model is studied using a generalisation of Path Integral Renormalisation Group, a variational method which can also determine low-lying excitations. In particular, the distribution of antiferromagnetic properties is investigated. We conclude that antiferromagnetism breaks down in a percolation-type transition at a critical disorder, which is not changed appreciably by the inclusion of correlation effects, when compared to earlier studies. Electronic and excitation properties at the system sizes considered turn out to primarily depend on the geometry. (orig.)

  14. Dynamical mean-field theory and path integral renormalisation group calculations of strongly correlated electronic states

    International Nuclear Information System (INIS)

    Heilmann, D.B.

    2007-02-01

    The two-plane HUBBARD model, which is a model for some electronic properties of undoped YBCO superconductors as well as displays a MOTT metal-to-insulator transition and a metal-to-band insulator transition, is studied within Dynamical Mean-Field Theory using HIRSCH-FYE Monte Carlo. In order to find the different transitions and distinguish the types of insulator, we calculate the single-particle spectral densities, the self-energies and the optical conductivities. We conclude that there is a continuous transition from MOTT to band insulator. In the second part, ground state properties of a diagonally disordered HUBBARD model is studied using a generalisation of Path Integral Renormalisation Group, a variational method which can also determine low-lying excitations. In particular, the distribution of antiferromagnetic properties is investigated. We conclude that antiferromagnetism breaks down in a percolation-type transition at a critical disorder, which is not changed appreciably by the inclusion of correlation effects, when compared to earlier studies. Electronic and excitation properties at the system sizes considered turn out to primarily depend on the geometry. (orig.)

  15. Properties and modification of two-dimensional electronic states on noble metals; Eigenschaften und Modifikation zweidimensionaler Elektronenzustaende auf Edelmetallen

    Energy Technology Data Exchange (ETDEWEB)

    Forster, F.

    2007-07-06

    In this thesis investigations on two-dimensional electronic structures of (111)-noble metal surfaces and the influence of various adsorbates upon them is presented. It chiefly focuses on the surface-localized Shockley states of Cu, Ag and Au and their band dispersion (binding energy, band mass, and spin-orbit splitting) which turns out to be a sensitive probe for surface modifications induced by adsorption processes. Angular resolved photoelectron spectroscopy enables the observation of even subtle changes in the electronic band structure of these two dimensional systems. Different mechanisms taking place at surfaces and the substrate/adsorbate interfaces influence the Shockley state in a different manner and will be analyzed using suitable adsorbate model systems. The experimental results are matched with appropriate theoretical models like the phase accumulation model and the nearly-free electron model and - if possible - with ab initio calculations based on density functional theory. This allows for the integration of the results into a stringent overall picture. The influence of sub-monolayer adsorption of Na upon the surface state regarding the significant change in surface work function is determined. A systematic study of the physisorption of noble gases shows the effect of the repulsive adsorbate-substrate interaction upon the electrons of the surface state. A step-by-step coverage of the Cu and Au(111) surfaces by monolayers of Ag creates a gradual change in the surface potential and causes the surface state to become increasingly Ag-like. For N=7 ML thick and layer-by-layer growing Ag films on Au(111), new two-dimensional electronic structures can be observed, which are attributed to the quantum well states of the Ag adsorbate. The question whether they are localized within the Ag-layer or substantially within the substrate is resolved by the investigation of their energetic and spatial evolution with increasing Ag-film thicknesses N. For this, beside the

  16. Electronic money in russia: current state and problems of development

    Directory of Open Access Journals (Sweden)

    T. G. Bondarenko

    2016-01-01

    Full Text Available Article is devoted to urgent problems of non-cash methods of calculation development by using electronic money – as one of the modern economically developed state strategic tasks. On modern economic science strong influence appears informatization process. The control expansion tendency, influence and distribution of commerce due to informatization of society led to emergence of the new phenomenon – information economy. Information economy brought new economic events which owing to their novelty are insufficiently studied to life. It is possible to carry electronic money to such phenomena of modern network economy Relevance and, in our opinion, timeliness of this scientific work, consisting in novelty of this non-cash payment method, its prospects and innovation within non-cash methods of calculations. Authors set as the purpose – studying of problems and the prospects of development of electronic money in the Russian Federation. In article theoretical bases of electronic money functioning are described. Determinations and classifications dismissed non-cash a method, and also the principles of electronic money functioning are considered, the questions of their historical development are raised.Authors analyzed statistical data on development of electronic services and channels of their using. Features, benefits and shortcomings of the current state of the market of electronic money are studied. The emphasis on that fact that in modern conditions considerable number of economic actors perform the activities, both in the real environment of economy, and within the virtual environment that promotes expansion of methods of their customer interaction by means of technical devices of personal computers, mobile phones is placed. In article common problems and tendencies of payments with using an electronic money are designated, the research on assessment of the current state and the prospects of electronic money

  17. Supra-transmission and bistability in nonlinear media with a photonic and electronic forbidden band gap; Supratransmission et bistabilite nonlineaire dans les milieux a bandes interdites photoniques et electroniques

    Energy Technology Data Exchange (ETDEWEB)

    Chevriaux, D

    2007-06-15

    We study wave scattering in different nonlinear media possessing a natural forbidden band gap. In particular, we show the existence of a bistable behavior in media governed by the sine-Gordon equation (short pendular chain, Josephson junction array, quantum Hall bilayer), or the nonlinear Schroedinger equation (Kerr and Bragg media), in discrete and continuous models. These different media are submitted to periodic boundary conditions with a frequency in the forbidden band gap and an amplitude that determines their stability states. Indeed, for a sufficient amplitude (supra-transmission), the medium switches from reflector to transmitter, hence allowing the output signal to jump from evanescent to large values. We give a complete analytical description of the bistability that allows to understand the different stationary states observed and to predict the switch of one state to the other. (author)

  18. Electronic and ground state properties of ThTe

    Energy Technology Data Exchange (ETDEWEB)

    Bhardwaj, Purvee, E-mail: purveebhardwaj@gmail.com; Singh, Sadhna, E-mail: drsadhna100@gmail.com [High Pressure Research Lab. Department of Physics Barkatullah University, Bhopal (MP) 462026 (India)

    2016-05-06

    The electronic properties of ThTe in cesium chloride (CsCl, B2) structure are investigated in the present paper. To study the ground state properties of thorium chalcogenide, the first principle calculations have been calculated. The bulk properties, including lattice constant, bulk modulus and its pressure derivative are obtained. The calculated equilibrium structural parameters are in good agreement with the available experimental and theoretical results.

  19. Two-electron states of a group-V donor in silicon from atomistic full configuration interactions

    Science.gov (United States)

    Tankasala, Archana; Salfi, Joseph; Bocquel, Juanita; Voisin, Benoit; Usman, Muhammad; Klimeck, Gerhard; Simmons, Michelle Y.; Hollenberg, Lloyd C. L.; Rogge, Sven; Rahman, Rajib

    2018-05-01

    Two-electron states bound to donors in silicon are important for both two-qubit gates and spin readout. We present a full configuration interaction technique in the atomistic tight-binding basis to capture multielectron exchange and correlation effects taking into account the full band structure of silicon and the atomic-scale granularity of a nanoscale device. Excited s -like states of A1 symmetry are found to strongly influence the charging energy of a negative donor center. We apply the technique on subsurface dopants subjected to gate electric fields and show that bound triplet states appear in the spectrum as a result of decreased charging energy. The exchange energy, obtained for the two-electron states in various confinement regimes, may enable engineering electrical control of spins in donor-dot hybrid qubits.

  20. INFLUENCE OF THE SKELETON HIERARCHICAL ORGANIZATION ON ELECTRONIC STATE OF IONS IN BONE MATRIX

    Directory of Open Access Journals (Sweden)

    A. S. Avrunin

    2016-01-01

    Full Text Available The authors suggested the 3D-superlattice (3DSL model to describe the effect of coplanar assembly of the hydroxyapatite (HA nanocrystallites on local electronic state of ions in mineralized bone. This model is based on the main structural and functional relationships between adjacent levels of the hierarchical organization of bone tissue. In the framework of the 3DSL model the authors predicted the distinct assembly-to-crystal red shift of the unoccupied electronic states located near the bottom of the conduction band in HA and dependence of this shift on the ratio of the thickness of the hydrated layer to the crystallite size. To check these predictions the experimental X-ray absorption studies of native bone are performed near the Ca2р1/2,3/2-, P2р1/2,3/2- и O1s edges. Comparison of the measured spectra with the known spectra of the reference compounds has confirmed appearance of the distinct assembly-to-crystal red shift. The observed effect is the ground for development of new diagnostic methods for bone status and imaging changes in the local electronic structure of bone tissue by using ultrasoft X-ray absorption spectroscopy and measuring the assembly-tocrystal shifts. The experimental data analysis proved the applicability of the 3DSL model for better understanding of the hierarchical organization of bone at nanolevel.