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Sample records for electron-irradiated n-type silicon

  1. Formation of hydrogen-related traps in electron-irradiated n-type silicon by wet chemical etching

    International Nuclear Information System (INIS)

    Tokuda, Yutaka; Shimada, Hitoshi

    1998-01-01

    Interaction of hydrogen atoms and vacancy-related defects in 10 MeV electron-irradiated n-type silicon has been studied by deep-level transient spectroscopy. Hydrogen has been incorporated into electron-irradiated n-type silicon by wet chemical etching. The reduction of the concentration of the vacancy-oxygen pair and divacancy occurs by the incorporation of hydrogen, while the formation of the NH1 electron trap (E c - 0.31 eV) is observed. Further decrease of the concentration of the vacancy-oxygen pair and further increase of the concentration of the NH1 trap are observed upon subsequent below-band-gap light illumination. It is suggested that the trap NH1 is tentatively ascribed to the vacancy-oxygen pair which is partly saturated with hydrogen

  2. Tin-vacancy acceptor levels in electron-irradiated n-type silicon

    DEFF Research Database (Denmark)

    Larsen, A. Nylandsted; Goubet, J. J.; Mejlholm, P.

    2000-01-01

    Si crystals (n-type, fz) with doping levels between 1.5x10(14) and 2x10(16)cm(-3) containing in addition similar to 10(18) Sn/cm(3) were irradiated with 2-MeV electrons to different doses and subsequently studied by deep level transient spectroscopy, Mossbauer spectroscopy, and positron...... annihilation. Two tin-vacancy (Sn-V) levels at E-c - 0.214 eV and E-c - 0.501 eV have been identified (E-c denotes the conduction band edge). Based on investigations of the temperature dependence of the electron-capture cross sections, the electric-field dependence of the electron emissivity, the anneal...... temperature, and the defect-introduction rate, it is concluded that these levels are the double and single acceptor levels, respectively, of the Sn-V pair. These conclusions are in agreement with electronic structure calculations carried out using a local spin-density functional theory, incorporating...

  3. The study of 1 MeV electron irradiation induced defects in N-type and P-type monocrystalline silicon

    Science.gov (United States)

    Babaee, S.; Ghozati, S. B.

    2017-12-01

    Despite extensive use of GaAs cells in space, silicon cells are still being used. The reason is that not only they provide a good compromise between efficiency and cost, but also some countries do not have the required technology for manufacturing GaAs. Behavior of a silicon cell under any levels of charged particle irradiation could be deducted from the results of a damage equivalent 1 MeV electron irradiation using the NASA EQflux open source software package. In this paper for the first time, we have studied the behavior of a silicon cell before and after 1 MeV electron irradiation with 1014, 1015 and 1016 electrons-cm-2 fluences, using SILVACO TCAD simulation software package. Simulation was carried out at room temperature under AM0 condition. Results reveal that open circuit voltage and efficiency decrease after irradiation while short circuit current shows a slight increase in the trend around 5 × 1016 electrons-cm-2, and short circuit current loss plays an important role on efficiency changes rather than open circuit voltage.

  4. Primary photoluminescence in as-neutron (electron) -irradiated n-type 6H-SiC

    International Nuclear Information System (INIS)

    Zhong, Z.Q.; Wu, D.X.; Gong, M.; Wang, O.; Shi, S.L.; Xu, S.J.; Chen, X.D.; Ling, C.C.; Fung, S.; Beling, C.D.; Brauer, G.; Anwand, W.; Skorupa, W.

    2006-01-01

    Low-temperature photoluminescence spectroscopy has revealed a series of features labeled S 1 , S 2 , S 3 in n-type 6H-SiC after neutron and electron irradiation. Thermal annealing studies showed that the defects S 1 , S 2 , S 3 disappeared at 500 deg. C. However, the well-known D 1 center was only detected for annealing temperatures over 700 deg. C. This experimental observation not only indicated that the defects S 1 , S 2 , S 3 were a set of primary defects and the D 1 center was a kind of secondary defect, but also showed that the D 1 center and the E 1 , E 2 observed using deep level transient spectroscopy might not be the same type of defects arising from the same physical origin

  5. Electron paramagnetic resonance study on n-type electron-irradiated 3C-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Carlsson, P; Rabia, K; Son, N T; Janzen, E [Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping (Sweden); Ohshima, T; Morishita, N; Itoh, H [Japan Atomic Energy Research Institute, Takasaki 370-1292 (Japan); Isoya, J [University of Tsukuba, Tsukuba 305-8550 (Japan)], E-mail: paca@ifm.liu.se

    2008-03-15

    Electron Paramagnetic Resonance (EPR) was used to study defects in n-type 3C-SiC films irradiated by 3-MeV electrons at room temperature with a dose of 2x10{sup 18} cm{sup -2}. After electron irradiation, two new EPR spectra with an effective spin S = 1, labeled L5 and L6, were observed. The L5 center has C{sub 3v} symmetry with g = 2.004 and a fine-structure parameter D = 436.5x10{sup -4} cm{sup -1}. The L5 spectrum was only detected under light illumination and it could not be detected after annealing at {approx}550{sup 0}C. The principal z-axis of the D tensor is parallel to the <111>-directions, indicating the location of spins along the Si-C bonds. Judging from the symmetry and the fact that the signal was detected under illumination in n-type material, the L5 center may be related to the divacancy in the neutral charge state. The L6 center has a C{sub 2v}-symmetry with an isotropic g-value of g = 2.003 and the fine structure parameters D = 547.7x10{sup -4} cm{sup -1} and E = 56.2x10{sup -4} cm{sup -1}. The L6 center disappeared after annealing at a rather low temperature ({approx}200 deg. C), which is substantially lower than the known annealing temperatures for vacancy-related defects in 3C-SiC. This highly mobile defect may be related to carbon interstitials.

  6. Quantitative analysis of complexes in electron irradiated CZ silicon

    International Nuclear Information System (INIS)

    Inoue, N.; Ohyama, H.; Goto, Y.; Sugiyama, T.

    2007-01-01

    Complexes in helium or electron irradiated silicon are quantitatively analyzed by highly sensitive and accurate infrared (IR) absorption spectroscopy. Carbon concentration (1x10 15 -1x10 17 cm -3 ) and helium dose (5x10 12 -5x10 13 cm -2 ) or electron dose (1x10 15 -1x10 17 cm -2 ) are changed by two orders of magnitude in relatively low regime compared to the previous works. It is demonstrated that the carbon-related complex in low carbon concentration silicon of commercial grade with low electron dose can be detected clearly. Concentration of these complexes is estimated. It is clarified that the complex configuration and thermal behavior in low carbon and low dose samples is simple and almost confined within the individual complex family compared to those in high concentration and high dose samples. Well-established complex behavior in electron-irradiated sample is compared to that in He-irradiated samples, obtained by deep level transient spectroscopy (DLTS) or cathodoluminescence (CL), which had close relation to the Si power device performance

  7. Low-temperature radiation damage in silicon - 1: Annealing studies on N-type material

    International Nuclear Information System (INIS)

    Awadelkarim, O.O.

    1986-07-01

    The presence of electrically active defects in electron-irradiated P-doped n-type silicon was monitored using capacitance and loss factor measurements. Irradiations were performed at temperatures c - 0.14) eV and (E c - 0.24) eV in the gap are ascribed to the carbon interstitial and the divacancy, respectively. (author)

  8. Deactivation of group III acceptors in silicon during keV electron irradiation

    International Nuclear Information System (INIS)

    Sah, C.; Sun, J.Y.; Tzou, J.J.; Pan, S.C.

    1983-01-01

    Experimental results on p-Si metal-oxide-semiconductor capacitors (MOSC's) are presented which demonstrate the electrical deactivation of the acceptor dopant impurity during 8-keV electron irradiation not only in boron but also aluminum and indium-doped silicon. The deactivation rates of the acceptors during the 8-keV electron irradiation are nearly independent of the acceptor impurity type. The final density of the remaining active acceptor approaches nonzero values N/sub infinity/, with N/sub infinity/(B) Al--H>In-H. These deactivation results are consistent with our hydrogen bond model. The thermal annealing or regeneration rate of the deactivated acceptors in the MOSC's irradiated by 8-keV electron is much smaller than that in the MOSC's that have undergone avalanche electron injection, indicating that the keV electron irradiation gives rise to stronger hydrogen-acceptor bond

  9. Investigation of carrier removal in electron irradiated silicon diodes

    International Nuclear Information System (INIS)

    Taylor, S.J.; Yamaguchi, M.; Matsuda, S.; Hisamatsu, T.; Kawasaki, O.

    1997-01-01

    We present a detailed study of n + p p + silicon diodes irradiated with fluences of 1 MeV electrons high enough to cause device failure due to majority carrier removal. Capacitance voltage (C V) measurements were used to monitor the change in the carrier concentration of the base of the device as a function of radiation fluence. These were compared to the defect spectra in the same region obtained by deep level transient spectroscopy, and to the current voltage characteristics of the device, both before and after annealing. We observed the expected deep levels with activation energies of 0.18 and 0.36 eV, but the C endash V results imply that other trap levels must play a more important role in the carrier removal process. copyright 1997 American Institute of Physics

  10. Effect of impurities on the growth of {113} interstitial clusters in silicon under electron irradiation

    OpenAIRE

    Nakai, K.; Hamada, K.; Satoh, Y.; Yoshiie, T.

    2011-01-01

    The growth and shrinkage of interstitial clusters on {113} planes were investigated in electron irradiated Czochralski grown silicon (Cz-Si), floating-zone silicon (Fz-Si), and impurity-doped Fz-Si (HT-Fz-Si) using a high voltage electron microscope. In Fz-Si, {113} interstitial clusters were formed only near the beam incident surface after a long incubation period, and shrank on subsequent irradiation from the backside of the specimen. In Cz-Si and HT-Fz-Si, {113} interstitial clusters nucle...

  11. Profiling N-Type Dopants in Silicon

    Czech Academy of Sciences Publication Activity Database

    Hovorka, Miloš; Mika, Filip; Mikulík, P.; Frank, Luděk

    2010-01-01

    Roč. 51, č. 2 (2010), s. 237-242 ISSN 1345-9678 R&D Projects: GA ČR GP102/09/P543; GA AV ČR IAA100650803 Institutional research plan: CEZ:AV0Z20650511 Keywords : silicon * dopant contrast * photoemission electron microscopy * scanning electron microscopy Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 0.779, year: 2010 http://www.jim.or.jp/journal/e/51/02/237.html

  12. Effect of impurities on the growth of {113} interstitial clusters in silicon under electron irradiation

    Science.gov (United States)

    Nakai, K.; Hamada, K.; Satoh, Y.; Yoshiie, T.

    2011-01-01

    The growth and shrinkage of interstitial clusters on {113} planes were investigated in electron irradiated Czochralski grown silicon (Cz-Si), floating-zone silicon (Fz-Si), and impurity-doped Fz-Si (HT-Fz-Si) using a high voltage electron microscope. In Fz-Si, {113} interstitial clusters were formed only near the beam incident surface after a long incubation period, and shrank on subsequent irradiation from the backside of the specimen. In Cz-Si and HT-Fz-Si, {113} interstitial clusters nucleated uniformly throughout the specimen without incubation, and began to shrink under prolonged irradiation at higher electron beam intensity. At lower beam intensity, however, the {113} interstitial cluster grew stably. These results demonstrate that the {113} interstitial cluster cannot grow without a continuous supply of impurities during electron irradiation. Detailed kinetics of {113} interstitial cluster growth and shrinkage in silicon, including the effects of impurities, are proposed. Then, experimental results are analyzed using rate equations based on these kinetics.

  13. Investigation of influence of electronic irradiation on photoluminescence spectrum and ir-spectrum of porous silicon

    International Nuclear Information System (INIS)

    Daineko, E.A.; Dihanbayev, K.K.; Akhtar, P.; Hussain, A.

    2007-01-01

    In this article we study the influence of 2-Mev electron irradiation on porous silicon (PS). Photoluminescence (PL) spectrum and IR-spectrum have been done on both newly-prepared PS samples and samples prepared a year ago after the irradiation. We analyzed PL spectrum for both types of PS samples. The experimental results suggest that the peak position in PL spectrum decreases for newly-prepared PS samples. The size of the nanocrystals calculated by the method of singling out of spectrum components was equal to 3.0-3.2 nm. Porosity of the samples was 60-75%. From IR-spectrum of newly-prepared PS samples wide absorption band was observed at 1100 cm/sup -1/ (Si-O-Si bond). Another peak of Si-O-Si group was observed at 850 cm/sub -1/. Also hydrogen absorption bands were appearing from 2000 to 2200 cm/sup -1/, corresponding to vibration modes SiH, SiH/sub 2/, SiH/sub 3/. As a result of electron irradiation the PL intensity of newly-prepared PS samples decreases abruptly by a factor of 30 without peak shifting. As for the samples prepared a year ago we observed a decrease in the PL intensity by 25-30%. From IR-spectrum of PS samples prepared a year ago it was shown that the intensity of bridge bonds corresponding to absorption band 850 cm/sup -1/, decreases gradually. Our experimental data shows that PS samples stored for longer time have better radiation resistant properties than the newly-prepared PS samples due to the replacement of Si-H bonds with more resistant Si-O bonds. Porous silicon, electrochemical anodizing, photoluminescence spectrum, IR-spectrum, electronic irradiation. (author)

  14. Deep levels in as-grown and electron-irradiated n-type GaN studied by deep level transient spectroscopy and minority carrier transient spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Duc, Tran Thien [Department of Physics, Chemistry and Biology (IFM), Linköping University, S-581 83 Linköping (Sweden); School of Engineering Physics, Hanoi University of Science and Technology, 1 Dai Co Viet Road, Hanoi (Viet Nam); Pozina, Galia; Son, Nguyen Tien; Kordina, Olof; Janzén, Erik; Hemmingsson, Carl [Department of Physics, Chemistry and Biology (IFM), Linköping University, S-581 83 Linköping (Sweden); Ohshima, Takeshi [Japan Atomic Energy Agency (JAEA), Takasaki, Gunma 370-1292 (Japan)

    2016-03-07

    Development of high performance GaN-based devices is strongly dependent on the possibility to control and understand defects in material. Important information about deep level defects is obtained by deep level transient spectroscopy and minority carrier transient spectroscopy on as-grown and electron irradiated n-type bulk GaN with low threading dislocation density produced by halide vapor phase epitaxy. One hole trap labelled H1 (E{sub V} + 0.34 eV) has been detected on as-grown GaN sample. After 2 MeV electron irradiation, the concentration of H1 increases and at fluences higher than 5 × 10{sup 14 }cm{sup −2}, a second hole trap labelled H2 is observed. Simultaneously, the concentration of two electron traps, labelled T1 (E{sub C} – 0.12 eV) and T2 (E{sub C} – 0.23 eV), increases. By studying the increase of the defect concentration versus electron irradiation fluence, the introduction rate of T1 and T2 using 2 MeV- electrons was determined to be 7 × 10{sup −3 }cm{sup −1} and 0.9 cm{sup −1}, respectively. Due to the low introduction rate of T1, it is suggested that the defect is associated with a complex. The high introduction rate of trap H1 and T2 suggests that the defects are associated with primary intrinsic defects or complexes. Some deep levels previously observed in irradiated GaN layers with higher threading dislocation densities are not detected in present investigation. It is therefore suggested that the absent traps may be related to primary defects segregated around dislocations.

  15. Lifetime degradation of n-type Czochralski silicon after hydrogenation

    Science.gov (United States)

    Vaqueiro-Contreras, M.; Markevich, V. P.; Mullins, J.; Halsall, M. P.; Murin, L. I.; Falster, R.; Binns, J.; Coutinho, J.; Peaker, A. R.

    2018-04-01

    Hydrogen plays an important role in the passivation of interface states in silicon-based metal-oxide semiconductor technologies and passivation of surface and interface states in solar silicon. We have shown recently [Vaqueiro-Contreras et al., Phys. Status Solidi RRL 11, 1700133 (2017)] that hydrogenation of n-type silicon slices containing relatively large concentrations of carbon and oxygen impurity atoms {[Cs] ≥ 1 × 1016 cm-3 and [Oi] ≥ 1017 cm-3} can produce a family of C-O-H defects, which act as powerful recombination centres reducing the minority carrier lifetime. In this work, evidence of the silicon's lifetime deterioration after hydrogen injection from SiNx coating, which is widely used in solar cell manufacturing, has been obtained from microwave photoconductance decay measurements. We have characterised the hydrogenation induced deep level defects in n-type Czochralski-grown Si samples through a series of deep level transient spectroscopy (DLTS), minority carrier transient spectroscopy (MCTS), and high-resolution Laplace DLTS/MCTS measurements. It has been found that along with the hydrogen-related hole traps, H1 and H2, in the lower half of the gap reported by us previously, hydrogenation gives rise to two electron traps, E1 and E2, in the upper half of the gap. The activation energies for electron emission from the E1 and E2 trap levels have been determined as 0.12, and 0.14 eV, respectively. We argue that the E1/H1 and E2/H2 pairs of electron/hole traps are related to two energy levels of two complexes, each incorporating carbon, oxygen, and hydrogen atoms. Our results show that the detrimental effect of the C-O-H defects on the minority carrier lifetime in n-type Si:O + C materials can be very significant, and the carbon concentration in Czochralski-grown silicon is a key parameter in the formation of the recombination centers.

  16. EPR and transient capacitance studies on electron-irradiated silicon solar cells

    Science.gov (United States)

    Lee, Y. H.; Cheng, L. J.; Mooney, P. M.; Corbett, J. W.

    1977-01-01

    One and two ohm-cm solar cells irradiated with 1 MeV electrons at 30 C were studied using both EPR and transient capacitance techniques. In 2 ohm-cm cells, Si-G6 and Si-G15 EPR spectra and majority carrier trapping levels at (E sub V + 0.23) eV and (E sub V + 0.38) eV were observed, each of which corresponded to the divacancy and the carbon-oxygen-vacancy complex, respectively. In addition, a boron-associated defect with a minority carrier trapping level at (E sub C -0.27) eV was observed. In 1 ohm-cm cells, the G15 spectrum and majority carrier trap at (E sub V + 0.38) eV were absent and an isotropic EPR line appeared at g = 1.9988 (+ or - 0.0003); additionally, a majority carrier trapping center at (E sub V + 0.32) eV, was found which could be associated with impurity lithium. The formation mechanisms of these defects are discussed according to isochronal annealing data in electron-irradiated p-type silicon.

  17. Infrared defect dynamics—Nitrogen-vacancy complexes in float zone grown silicon introduced by electron irradiation

    Science.gov (United States)

    Inoue, Naohisa; Kawamura, Yuichi

    2018-05-01

    The interaction of nitrogen and intrinsic point defects, vacancy (V) and self-interstitial (I), was examined by infrared absorption spectroscopy on the electron irradiated and post-annealed nitrogen doped float zone (FZ) silicon crystal. Various absorption lines were observed, at 551 cm-1 in as-grown samples, at 726 and 778 cm-1 in as-irradiated samples (Ir group), at 689 cm-1 after post-annealing at 400 °C and above (400 °C group), at 762 and 951 cm-1 after annealing at 600 °C (600 °C group), and at 714 cm-1 up to 800 °C (800 °C group). By irradiation, a part of N2 was changed into the Ir group. VN2 is the candidate for the origin of the Ir group. By the post annealing at 400 and 600 °C, a part of N2 and the Ir group were changed into the 400 °C group, to less extent at 600 °C. V2N2 is the candidate for the origin of the 400 °C group. By annealing at 600 °C, most of the Ir group turned into 400 °C and 600 °C groups. By annealing at 800 °C, N2 recovered almost completely, and most other complexes were not observed. Recently, lifetime degradation has been observed in the nitrogen doped FZ Si annealed at between 450 and 800 °C. The N-V interaction in the same temperature range revealed here will help to understand the lifetime degradation mechanism. The behavior of the 689 cm-1 line corresponded well to the lifetime degradation.

  18. Study of the effect of neutron and electron irradiations on the low temperature thermal conductivity of germanium and silicon

    International Nuclear Information System (INIS)

    Vandevyver, M.

    1967-06-01

    The main results obtained from this work are the following: 1 Neutron irradiation (at 300 deg. K) produces lattice defects in germanium and silicon, and a corresponding very large lowering of the thermal conductivity is observed in the low temperature region (4-300 ). The results obtained have been explained with the help of the following hypotheses: for silicon a scattering of phonons by the stress fields produced by the defects; for germanium, a supplementary scattering of the electron phonon type. 2 Annealing treatments carried out on these materials above 373 deg. K restored the thermal conductivity over the whole temperature range of the measurements (4-300 deg. K); in the case of both germanium and silicon there were two steps in the annealing process. 3 A study of the thermal conductivity of germanium (initially P or N) after an electronic irradiation showed that the scattering of phonons could depend on the state of charge of the defects thus produced. (author) [fr

  19. Effects of keV electron irradiation on the avalanche-electron generation rates of three donors on oxidized silicon

    International Nuclear Information System (INIS)

    Sah, C.; Sun, J.Y.; Tzou, J.J.

    1983-01-01

    After keV electron beam irradiation of oxidized silicon, the avalanche-electron-injection generation rates and densities of the bulk compensating donor, the interface states, and the turnaround trap all increase. Heating at 200 0 C can anneal out these three donor-like traps, however, it cannot restore the generation rates back to their original and lower pre-keV electron irradiation values. The experimental results also indicate that all three traps may be related to the same mobile impurity species whose bonds are loosened by the keV electrons and then broken or released by the avalanche injected electrons

  20. Characterization of light element impurities in ultrathin silicon-on-insulator layers by luminescence activation using electron irradiation

    International Nuclear Information System (INIS)

    Nakagawa-Toyota, Satoko; Tajima, Michio; Hirose, Kazuyuki; Ohshima, Takeshi; Itoh, Hisayoshi

    2009-01-01

    We analyzed light element impurities in ultrathin top Si layers of silicon-on-insulator (SOI) wafers by luminescence activation using electron irradiation. Photoluminescence (PL) analysis under ultraviolet (UV) light excitation was performed on various commercial SOI wafers after the irradiation. We detected the C-line related to a complex of interstitial carbon and oxygen impurities and the G-line related to a complex of interstitial and substitutional carbon impurities in the top Si layer with a thickness down to 62 nm after electron irradiation. We showed that there were differences in the impurity concentration depending on the wafer fabrication methods and also that there were variations in these concentrations in the respective wafers. Xenon ion implantation was used to activate top Si layers selectively so that we could confirm that the PL signal under the UV light excitation comes not from substrates but from top Si layers. The present method is a very promising tool to evaluate the light element impurities in top Si layers. (author)

  1. Morphological and optical properties of n-type porous silicon

    Indian Academy of Sciences (India)

    type silicon wafer have been reported in the present article. Method of PS fabrication is by photo-assisted electrochemical etching with different etching current densities ( J ). Porosity and PS layer thickness, obtained by the gravimetric method, ...

  2. Effects of phosphorus, silicon and sulphur on microstructural evolution in austenitic stainless steels during electron irradiation

    International Nuclear Information System (INIS)

    Fukuya, K.; Nakahigashi, S.; Ozaki, S.; Shima, S.

    1991-01-01

    Fe-18Cr-9Ni-1,5Mn austenitic alloys containing phosphorus, silicon and sulphur were irradiated by 1 MeV electrons at 573-773 K. Phosphorus increased the interstitial loop nucleation and decreased the void swelling by increasing void number density and suppressing void growth. Silicon had a similar effect to phosphorus but its effect was weaker than phosphorus. Sulphur enhanced void swelling through increasing the void density. Nickel enrichment at grain boundaries was suppressed only in the alloy containing phosphorus. These phosphorus effects may be explained by a strong interaction with interstitials resulting in a high density of sinks for point defects. (orig.)

  3. Deep level centers in electron-irradiated silicon crystals doped with copper at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Yarykin, Nikolai [Institute of Microelectronics Technology, RAS, Chernogolovka (Russian Federation); Weber, Joerg [Technische Universitaet Dresden (Germany)

    2017-07-15

    The effect of bombardment with energetic particles on the deep-level spectrum of copper-contaminated silicon wafers is studied by space charge spectroscopy methods. The p-type FZ-Si wafers were doped with copper in the temperature range of 645-750 C and then irradiated with the 10{sup 15} cm{sup -2} fluence of 5 MeV electrons at room temperature. Only the mobile Cu{sub i} species and the Cu{sub PL} centers are detected in significant concentrations in the non-irradiated Cu-doped wafers. The properties of the irradiated samples are found to qualitatively depend on the copper in-diffusion temperature T{sub diff}. For T{sub diff} > 700 C, the irradiation partially reduces the Cu{sub i} concentration and introduces additional Cu{sub PL} centers while no standard radiation defects are detected. If T{sub diff} was below ∝700 C, the irradiation totally removes the mobile Cu{sub i} species. Instead, the standard radiation defects and their complexes with copper appear in the deep-level spectrum. A model for the defects reaction scheme during the irradiation is derived and discussed. DLTS spectrum of the Cu-contaminated and then irradiated silicon qualitatively depends on the copper in-diffusion temperature. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Impact of low-dose electron irradiation on n+p silicon strip sensors

    CERN Document Server

    Adam, W.; Dragicevic, M.; Friedl, M.; Fruehwirth, R.; Hoch, M.; Hrubec, J.; Krammer, M.; Treberspurg, W.; Waltenberger, W.; Alderweireldt, S.; Beaumont, W.; Janssen, X.; Luyckx, S.; Van Mechelen, P.; Van Remortel, N.; Van Spilbeeck, A.; Barria, P.; Caillol, C.; Clerbaux, B.; De Lentdecker, G.; Dobur, D.; Favart, L.; Grebenyuk, A.; Lenzi, Th.; Leonard, A.; Maerschalk, Th.; Mohammadi, A.; Pernie, L.; Randle-Conde, A.; Reis, T.; Seva, T.; Thomas, L.; Vander Velde, C.; Vanlaer, P.; Wang, J.; Zenoni, F.; Abu Zeid, S.; Blekman, F.; De Bruyn, I.; D'Hondt, J.; Daci, N.; Deroover, K.; Heracleous, N.; Keaveney, J.; Lowette, S.; Moreels, L.; Olbrechts, A.; Python, Q.; Tavernier, S.; Van Mulders, P.; Van Onsem, G.; Van Parijs, I.; Strom, D.A.; Basegmez, S.; Bruno, G.; Castello, R.; Caudron, A.; Ceard, L.; De Callatay, B.; Delaere, C.; Pree, T.Du; Forthomme, L.; Giammanco, A.; Hollar, J.; Jez, P.; Michotte, D.; Nuttens, C.; Perrini, L.; Pagano, D.; Quertenmont, L.; Selvaggi, M.; Marono, M.Vidal; Beliy, N.; Caebergs, T.; Daubie, E.; Hammad, G.H.; Harkonen, J.; Lampen, T.; Luukka, P.R.; Maenpaa, T.; Peltola, T.; Tuominen, E.; Tuovinen, E.; Eerola, P.; Tuuva, T.; Beaulieu, G.; Boudoul, G.; Combaret, C.; Contardo, D.; Gallbit, G.; Lumb, N.; Mathez, H.; Mirabito, L.; Perries, S.; Sabes, D.; Vander Donckt, M.; Verdier, P.; Viret, S.; Zoccarato, Y.; Agram, J.L.; Conte, E.; Fontaine, J.Ch.; Andrea, J.; Bloch, D.; Bonnin, C.; Brom, J.M.; Chabert, E.; Charles, L.; Goetzmann, Ch.; Gross, L.; Hosselet, J.; Mathieu, C.; Richer, M.; Skovpen, K.; Autermann, C.; Edelhoff, M.; Esser, H.; Feld, L.; Karpinski, W.; Klein, K.; Lipinski, M.; Ostapchuk, A.; Pierschel, G.; Preuten, M.; Raupach, F.; Sammet, J.; Schael, S.; Schwering, G.; Wittmer, B.; Wlochal, M.; Zhukov, V.; Pistone, C.; Fluegge, G.; Kuensken, A.; Geisler, M.; Pooth, O.; Stahl, A.; Bartosik, N.; Behr, J.; Burgmeier, A.; Calligaris, L.; Dolinska, G.; Eckerlin, G.; Eckstein, D.; Eichhorn, T.; Fluke, G.; Garcia, J.Garay; Gizhko, A.; Hansen, K.; Harb, A.; Hauk, J.; Kalogeropoulos, A.; Kleinwort, C.; Korol, I.; Lange, W.; Lohmann, W.; Mankel, R.; Maser, H.; Mittag, G.; Muhl, C.; Mussgiller, A.; Nayak, A.; Ntomari, E.; Perrey, H.; Pitzl, D.; Schroeder, M.; Seitz, C.; Spannagel, S.; Zuber, A.; Biskop, H.; Blobel, V.; Buhmann, P.; Centis-Vignali, M.; Draeger, A.R.; Erfle, J.; Garutti, E.; Haller, J.; Henkel, Ch.; Hoffmann, M.; Junkes, A.; Klanner, R.; Lapsien, T.; Mattig, S.; Matysek, M.; Perieanu, A.; Poehlsen, J.; Poehlsen, T.; Scharf, Ch.; Schleper, P.; Schmidt, A.; Schuwalow, S.; Schwandt, J.; Sola, V.; Steinbruck, G.; Vormwald, B.; Wellhausen, J.; Barvich, T.; Barth, Ch.; Boegelspacher, F.; De Boer, W.; Butz, E.; Casele, M.; Colombo, F.; Dierlamm, A.; Eber, R.; Freund, B.; Hartmann, F.; Hauth, Th.; Heindl, S.; Hoffmann, K.H.; Husemann, U.; Kornmeyer, A.; Mallows, S.; Muller, Th.; Nuernberg, A.; Printz, M.; Simonis, H.J.; Steck, P.; Weber, M.; Weiler, Th.; Bhardwaj, A.; Kumar, A.; Ranjan, K.; Bakhshiansohl, H.; Behnamian, H.; Khakzad, M.; Naseri, M.; Cariola, P.; De Robertis, G.; Fiore, L.; Franco, M.; Loddo, F.; Sala, G.; Silvestris, L.; Creanza, D.; De Palma, M.; Maggi, G.; My, S.; Selvaggi, G.; Albergo, S.; Cappello, G.; Chiorboli, M.; Costa, S.; Giordano, F.; Di Mattia, A.; Potenza, R.; Saizu, M.A.; Tricomi, A.; Tuve, C.; Barbagli, G.; Brianzi, M.; Ciaranfi, R.; Civinini, C.; Gallo, E.; Meschini, M.; Paoletti, S.; Sguazzoni, G.; Ciulli, V.; D'Alessandro, R.; Gonzi, S.; Gori, V.; Focardi, E.; Lenzi, P.; Scarlini, E.; Tropiano, A.; Viliani, L.; Ferro, F.; Robutti, E.; Lo Vetere, M.; Gennai, S.; Malvezzi, S.; Menasce, D.; Moroni, L.; Pedrini, D.; Dinardo, M.; Fiorendi, S.; Manzoni, R.A.; Azzi, P.; Bacchetta, N.; Bisello, D.; Dall'Osso, M.; Dorigo, T.; Giubilato, P.; Pozzobon, N.; Tosi, M.; Zucchetta, A.; De Canio, F.; Gaioni, L.; Manghisoni, M.; Nodari, B.; Re, V.; Traversi, G.; Comotti, D.; Ratti, L.; Bilei, G.M.; Bissi, L.; Checcucci, B.; Magalotti, D.; Menichelli, M.; Saha, A.; Servoli, L.; Storchi, L.; Biasini, M.; Conti, E.; Ciangottini, D.; Fano, L.; Lariccia, P.; Mantovani, G.; Passeri, D.; Placidi, P.; Salvatore, M.; Santocchia, A.; Solestizi, L.A.; Spiezia, A.; Demaria, N.; Rivetti, A.; Bellan, R.; Casasso, S.; Costa, M.; Covarelli, R.; Migliore, E.; Monteil, E.; Musich, M.; Pacher, L.; Ravera, F.; Romero, A.; Solano, A.; Trapani, P.; Jaramillo Echeverria, R.; Fernandez, M.; Gomez, G.; Moya, D.; F. Gonzalez Sanchez, J.; Munoz Sanchez, F.J.; Vila, I.; Virto, A.L.; Abbaneo, D.; Ahmed, I.; Albert, E.; Auzinger, G.; Berruti, G.; Bianchi, G.; Blanchot, G.; Breuker, H.; Ceresa, D.; Christiansen, J.; Cichy, K.; Daguin, J.; D'Alfonso, M.; D'Auria, A.; Detraz, S.; De Visscher, S.; Deyrail, D.; Faccio, F.; Felici, D.; Frank, N.; Gill, K.; Giordano, D.; Harris, P.; Honma, A.; Kaplon, J.; Kornmayer, A.; Kortelainen, M.; Kottelat, L.; Kovacs, M.; Mannelli, M.; Marchioro, A.; Marconi, S.; Martina, S.; Mersi, S.; Michelis, S.; Moll, M.; Onnela, A.; Pakulski, T.; Pavis, S.; Peisert, A.; Pernot, J.F.; Petagna, P.; Petrucciani, G.; Postema, H.; Rose, P.; Rzonca, M.; Stoye, M.; Tropea, P.; Troska, J.; Tsirou, A.; Vasey, F.; Vichoudis, P.; Verlaat, B.; Zwalinski, L.; Bachmair, F.; Becker, R.; Bani, L.; di Calafiori, D.; Casal, B.; Djambazov, L.; Donega, M.; Dunser, M.; Eller, P.; Grab, C.; Hits, D.; Horisberger, U.; Hoss, J.; Kasieczka, G.; Lustermann, W.; Mangano, B.; Marionneau, M.; Martinez Ruiz del Arbol, P.; Masciovecchio, M.; Perrozzi, L.; Roeser, U.; Rossini, M.; Starodumov, A.; Takahashi, M.; Wallny, R.; Amsler, C.; Bosiger, K.; Caminada, L.; Canelli, F.; Chiochia, V.; De Cosa, A.; Galloni, C.; Hreus, T.; Kilminster, B.; Lange, C.; Maier, R.; Ngadiuba, J.; Pinna, D.; Robmann, P.; Taroni, S.; Yang, Y.; Bertl, W.; Deiters, K.; Erdmann, W.; Horisberger, R.; Kaestli, H.C.; Kotlinski, D.; Langenegger, U.; Meier, B.; Rohe, T.; Streuli, S.; Chen, P.H.; Dietz, C.; Grundler, U.; Hou, W.S.; Lu, R.S.; Moya, M.; Wilken, R.; Cussans, D.; Flacher, H.; Goldstein, J.; Grimes, M.; Jacob, J.; El Nasr-Storey, S.Seif; Cole, J.; Hobson, P.; Leggat, D.; Reid, I.D.; Teodorescu, L.; Bainbridge, R.; Dauncey, P.; Fulcher, J.; Hall, G.; Magnan, A.M.; Pesaresi, M.; Raymond, D.M.; Uchida, K.; Coughlan, J.A.; Harder, K.; Ilic, J.; Tomalin, I.R.; Garabedian, A.; Heintz, U.; Narain, M.; Nelson, J.; Sagir, S.; Speer, T.; Swanson, J.; Tersegno, D.; Watson-Daniels, J.; Chertok, M.; Conway, J.; Conway, R.; Flores, C.; Lander, R.; Pellett, D.; Ricci-Tam, F.; Squires, M.; Thomson, J.; Yohay, R.; Burt, K.; Ellison, J.; Hanson, G.; Malberti, M.; Olmedo, M.; Cerati, G.; Sharma, V.; Vartak, A.; Yagil, A.; Della Porta, G.Zevi; Dutta, V.; Gouskos, L.; Incandela, J.; Kyre, S.; McColl, N.; Mullin, S.; White, D.; Cumalat, J.P.; Ford, W.T.; Gaz, A.; Krohn, M.; Stenson, K.; Wagner, S.R.; Baldin, B.; Bolla, G.; Burkett, K.; Butler, J.; Cheung, H.; Chramowicz, J.; Christian, D.; Cooper, W.E.; Deptuch, G.; Derylo, G.; Gingu, C.; Gruenendahl, S.; Hasegawa, S.; Hoff, J.; Howell, J.; Hrycyk, M.; Jindariani, S.; Johnson, M.; Jung, A.; Joshi, U.; Kahlid, F.; Lei, C.M.; Lipton, R.; Liu, T.; Los, S.; Matulik, M.; Merkel, P.; Nahn, S.; Prosser, A.; Rivera, R.; Shenai, A.; Spiegel, L.; Tran, N.; Uplegger, L.; Voirin, E.; Yin, H.; Adams, M.R.; Berry, D.R.; Evdokimov, A.; Evdokimov, O.; Gerber, C.E.; Hofman, D.J.; Kapustka, B.K.; O'Brien, C.; Sandoval Gonzalez, D.I.; Trauger, H.; Turner, P.; Parashar, N.; Stupak, J., III; Bortoletto, D.; Bubna, M.; Hinton, N.; Jones, M.; Miller, D.H.; Shi, X.; Tan, P.; Baringer, P.; Bean, A.; Benelli, G.; Gray, J.; Majumder, D.; Noonan, D.; Sanders, S.; Stringer, R.; Ivanov, A.; Makouski, M.; Skhirtladze, N.; Taylor, R.; Anderson, I.; Fehling, D.; Gritsan, A.; Maksimovic, P.; Martin, C.; Nash, K.; Osherson, M.; Swartz, M.; Xiao, M.; Acosta, J.G.; Cremaldi, L.M.; Oliveros, S.; Perera, L.; Summers, D.; Bloom, K.; Bose, S.; Claes, D.R.; Dominguez, A.; Fangmeier, C.; Gonzalez Suarez, R.; Meier, F.; Monroy, J.; Hahn, K.; Sevova, S.; Sung, K.; Trovato, M.; Bartz, E.; Duggan, D.; Halkiadakis, E.; Lath, A.; Park, M.; Schnetzer, S.; Stone, R.; Walker, M.; Malik, S.; Mendez, H.; Ramirez Vargas, J.E.; Alyari, M.; Dolen, J.; George, J.; Godshalk, A.; Iashvili, I.; Kaisen, J.; Kharchilava, A.; Kumar, A.; Rappoccio, S.; Alexander, J.; Chaves, J.; Chu, J.; Dittmer, S.; Kaufman, G.; Mirman, N.; Ryd, A.; Salvati, E.; Skinnari, L.; Thom, J.; Thompson, J.; Tucker, J.; Winstrom, L.; Akgun, B.; Ecklund, K.M.; Nussbaum, T.; Zabel, J.; Betchart, B.; Demina, R.; Hindrichs, O.; Petrillo, G.; Eusebi, R.; Osipenkov, I.; Perloff, A.; Ulmer, K.A.; Delannoy, A.G.; D'Angelo, P.; Johns, W.

    2015-01-01

    The response of n+p silicon strip sensors to electrons from a Sr-90 source was measured using a multi-channel read-out system with 25 ns sampling time. The measurements were performed over a period of several weeks, during which the operating conditions were varied. The sensors were fabricated by Hamamatsu Photonics K.K. on 200 micrometer thick float-zone and magnetic-Czochralski silicon. Their pitch was 80 micrometer, and both p-stop and p-spray isolation of the n+ strips were studied. The electrons from the Sr-90 source were collimated to a spot with a full-width-at-half-maximum of 2 mm at the sensor surface, and the dose rate in the SiO2 at the maximum was about 50 Gy/d. After only a few hours of making measurements, significant changes in charge collection and charge sharing were observed. Annealing studies, with temperatures up to 80{\\deg}C and annealing times of 18 hours, showed that the changes can only be partially annealed. The observations can be qualitatively explained by the increase of the positi...

  5. Silicon heterojunction solar cells with novel fluorinated n-type nanocrystalline silicon oxide emitters on p-type crystalline silicon

    Science.gov (United States)

    Dhar, Sukanta; Mandal, Sourav; Das, Gourab; Mukhopadhyay, Sumita; Pratim Ray, Partha; Banerjee, Chandan; Barua, Asok Kumar

    2015-08-01

    A novel fluorinated phosphorus doped silicon oxide based nanocrystalline material have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-Si) Czochralski (CZ) wafers. The n-type nc-SiO:F:H material were deposited by radio frequency plasma enhanced chemical vapor deposition. Deposited films were characterized in detail by using atomic force microscopy (AFM), high resolution transmission electron microscopy (HRTEM), Raman, fourier transform infrared spectroscopy (FTIR) and optoelectronics properties have been studied using temperature dependent conductivity measurement, Ellipsometry, UV-vis spectrum analysis etc. It is observed that the cell fabricated with fluorinated silicon oxide emitter showing higher initial efficiency (η = 15.64%, Jsc = 32.10 mA/cm2, Voc = 0.630 V, FF = 0.77) for 1 cm2 cell area compare to conventional n-a-Si:H emitter (14.73%) on flat c-Si wafer. These results indicate that n type nc-SiO:F:H material is a promising candidate for heterojunction solar cell on p-type crystalline wafers. The high Jsc value is associated with excellent quantum efficiencies at short wavelengths (<500 nm).

  6. Impact of low-dose electron irradiation on n{sup +}p silicon strip sensors

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2015-12-11

    The response of n{sup +}p silicon strip sensors to electrons from a {sup 90}Sr source was measured using a multi-channel read-out system with 25 ns sampling time. The measurements were performed over a period of several weeks, during which the operating conditions were varied. The sensors were fabricated by Hamamatsu Photonics on 200 μm thick float-zone and magnetic-Czochralski silicon. Their pitch was 80 μm, and both p-stop and p-spray isolation of the n{sup +} strips were studied. The electrons from the {sup 90}Sr source were collimated to a spot with a full-width-at-half-maximum of 2 mm at the sensor surface, and the dose rate in the SiO{sub 2} at the maximum was about 50 Gy(SiO{sub 2})/d. After only a few hours of making measurements, significant changes in charge collection and charge sharing were observed. Annealing studies, with temperatures up to 80 °C and annealing times of 18 h showed that the changes can only be partially annealed. The observations can be qualitatively explained by the increase of the positive oxide-charge density due to the ionization of the SiO{sub 2} by the radiation from the β source. TCAD simulations of the electric field in the sensor for different oxide-charge densities and different boundary conditions at the sensor surface support this explanation. The relevance of the measurements for the design of n{sup +}p strip sensors is discussed.

  7. Mobility of charge carriers in electron-irradiated crystals of n-type Hg0.8Cd0.2Te

    International Nuclear Information System (INIS)

    Voitsekhovskii, A.V.; Kiryushkin, E.M.; Kokhanenko, A.P.; Kurbanov, K.R.; Lilenko, Yu.V.

    1988-01-01

    We present the results of an investigation of the behavior of the mobility of the charge carriers in Hg 1-x Cd x Te crystals with n-type conduction as a function of the dose of irradiation by electrons with an energy of 3.0 MeV at 300 K and the initial content of defects in the material. The complex character of the variation of the mobility of the electrons as a function of the dose observed when crystals of n-Hg 1-x Cd x Te (x ∼ 0.20) with different initial concentrations of defects are irradiated by fast electrons has been attributed to the influence of the factors of the shielding of the ionized scattering centers by electrons and the additional scattering of the charge carriers on the radiation defects. Good agreement between the experimental and calculated plots of the dependence of the mobility of electrons on the irradiation dose has been obtained with consideration of a model of the simultaneous introduction of donor (single charged) and acceptor (doubly charged) defects into a narrow-band semiconductor characterized by a degenerate and nonparabolic conduction band

  8. Formation of photoluminescent n-type macroporous silicon: Effect of magnetic field and lateral electric potential

    Energy Technology Data Exchange (ETDEWEB)

    Antunez, E.E. [Centro de Investigación en Ingeniería y Ciencias Aplicadas, UAEM, Av. Universidad 1001, Col. Chamilpa, Cuernavaca, Morelos, CP 62210 (Mexico); Estevez, J.O. [Instituto de Física, B. Universidad Autónoma de Puebla, A.P. J-48, Puebla 72570 (Mexico); Campos, J. [Instituto de Energías Renovables, UNAM, Priv. Xochicalco S/N, Temixco, Morelos, CP 62580 (Mexico); Basurto-Pensado, M.A. [Centro de Investigación en Ingeniería y Ciencias Aplicadas, UAEM, Av. Universidad 1001, Col. Chamilpa, Cuernavaca, Morelos, CP 62210 (Mexico); Agarwal, V., E-mail: vagarwal@uaem.mx [Centro de Investigación en Ingeniería y Ciencias Aplicadas, UAEM, Av. Universidad 1001, Col. Chamilpa, Cuernavaca, Morelos, CP 62210 (Mexico)

    2014-11-15

    Metal electrode-free electrochemical etching of low doped n-type silicon substrates, under the combined effect of magnetic and lateral electric field, is used to fabricate photoluminescent n-type porous silicon structures in dark conditions. A lateral gradient in terms of structural characteristics (i.e. thickness and pore dimensions) along the electric field direction is formed. Enhancement of electric and magnetic field resulted in the increase of pore density and a change in the shape of the macropore structure, from circular to square morphology. Broad photoluminescence (PL) emission from 500 to 800 nm, with a PL peak wavelength ranging from 571 to 642 nm, is attributed to the wide range of microporous features present on the porous silicon layer.

  9. The Impact of Metallic Impurities on Minority Carrier Lifetime in High Purity N-type Silicon

    Science.gov (United States)

    Yoon, Yohan

    Boron-doped p-type silicon is the industry standard silicon solar cell substrate. However, it has serious limitations: iron boron (Fe-B) pairs and light induced degradation (LID). To suppress LID, the replacement of boron by gallium as a p-type dopant has been proposed. Although this eliminates B-O related defects, gallium-related pairing with iron, oxygen, and carbon can reduce lifetime in this material. In addition resistivity variations are more pronounced in gallium doped ingots, however Continuous-Czochralski (c-Cz) growth technologies are being developed to overcome this problem. In this work lifetime limiting factors and resistivity variations have been investigated in this material. The radial and axial variations of electrically active defects were observed using deep level transient spectroscopy (DLTS) these have been correlated to lifetime and resistivity variations. The DLTS measurements demonstrated that iron-related pairs are responsible for the lifetime variations. Specifically, Fe-Ga pairs were found to be important recombination sites and are more detrimental to lifetime than Fei. Typically n-type silicon has a higher minority carrier lifetime than p-type silicon with similar levels of contamination. That is because n-type silicon is more tolerant to metallic impurities, especially Fe. Also, it has no serious issues in relation to lifetime degradation, such as FeB pairs and light-induced degradation (LID). However, surface passivation of the p + region in p+n solar cells is much more problematic than the n+p case where silicon nitride provides very effective passivation of the cell. SiO2 is the most effective passivation for n type surfaces, but it does not work well on B-doped surfaces, resulting in inadequate performance. Al2O3 passivation layer suggested for B-doped emitters. With this surface passivation layer a 23.2 % conversion efficiency has been achieved. After this discovery n-type silicon is now being seriously considered for

  10. N-type polycrystalline silicon films formed on alumina by aluminium induced crystallization and overdoping

    Energy Technology Data Exchange (ETDEWEB)

    Tuezuen, O. [InESS, UMR 7163 CNRS-ULP, 23 rue du Loess, F-67037 Strasbourg (France)], E-mail: Ozge.Tuzun@iness.c-strasbourg.fr; Slaoui, A. [InESS, UMR 7163 CNRS-ULP, 23 rue du Loess, F-67037 Strasbourg (France); Gordon, I. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Focsa, A. [InESS, UMR 7163 CNRS-ULP, 23 rue du Loess, F-67037 Strasbourg (France); Ballutaud, D. [GEMaC-UMR 8635 CNRS, 1 place Aristide Briand, F-92195 Meudon (France); Beaucarne, G.; Poortmans, J. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium)

    2008-08-30

    In this work, we investigated the formation of n-type polysilicon films on alumina substrates by overdoping a p-type silicon layer obtained by aluminium induced crystallization of amorphous silicon (AIC), and subsequent epitaxy. The phosphorus doping of the AIC was carried out by thermal diffusion from a solid source. The structural quality of the n-type Si film was monitored by optical microscope and scanning electron microscope (SEM). The doping efficiency was determined by resistivity measurements and secondary ion mass spectroscopy (SIMS). The sheet resitivity changed from 2700{omega}/sq to 19.6{omega}/sq after thermal diffusion at 950 deg. C for 1h, indicating the overdoping effect. The SIMS profile carried out after the high temperature epitaxy exhibits a two steps phosphorus distribution, indicating the formation of an n{sup +}n structure.

  11. Advancements in n-type base crystalline silicon solar cells and their emergence in the photovoltaic industry.

    Science.gov (United States)

    ur Rehman, Atteq; Lee, Soo Hong

    2013-01-01

    The p-type crystalline silicon wafers have occupied most of the solar cell market today. However, modules made with n-type crystalline silicon wafers are actually the most efficient modules up to date. This is because the material properties offered by n-type crystalline silicon substrates are suitable for higher efficiencies. Properties such as the absence of boron-oxygen related defects and a greater tolerance to key metal impurities by n-type crystalline silicon substrates are major factors that underline the efficiency of n-type crystalline silicon wafer modules. The bi-facial design of n-type cells with good rear-side electronic and optical properties on an industrial scale can be shaped as well. Furthermore, the development in the industrialization of solar cell designs based on n-type crystalline silicon substrates also highlights its boost in the contributions to the photovoltaic industry. In this paper, a review of various solar cell structures that can be realized on n-type crystalline silicon substrates will be given. Moreover, the current standing of solar cell technology based on n-type substrates and its contribution in photovoltaic industry will also be discussed.

  12. N-Type delta Doping of High-Purity Silicon Imaging Arrays

    Science.gov (United States)

    Blacksberg, Jordana; Hoenk, Michael; Nikzad, Shouleh

    2005-01-01

    A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including

  13. Embedding and electropolymerization of terthiophene derivatives in porous n-type silicon

    Energy Technology Data Exchange (ETDEWEB)

    Badeva, Diyana, E-mail: diyana.badeva@cnrs-imn.fr [Equipe Physique des Materiaux et Nanostructures, IMN, B.P. 32229, 44322 Nantes cedex 3 (France); Tran-Van, Francois, E-mail: francois.tran@univ-tours.fr [Laboratoire de Physico-Chimie des Materiaux et des Electrolytes pour l' Energie (PCM2E), E.A 6299, Universite de Tours, Faculte des Sciences et Techniques, Parc de Grandmont, 37200 Tours (France); Beouch, Layla, E-mail: layla.beouch@u-cergy.fr [Laboratoire de Physicochimie des Polymeres et des Interfaces, 5, mail Gay-Lussac, F-95031 Cergy-Pontoise Cedex (France); Chevrot, Claude, E-mail: claude.chevrot@u-cergy.fr [Laboratoire de Physicochimie des Polymeres et des Interfaces, 5, mail Gay-Lussac, F-95031 Cergy-Pontoise Cedex (France); Markova, Ivania, E-mail: vania@uctm.edu [Laboratory of Nanomaterials and Nanotechnologies, University of Chemical Technology and Metallurgy, 8 St. Kliment Ohridski blvd., 1756 Sofia (Bulgaria); Racheva, Todora, E-mail: todora@uctm.edu [Laboratory of Nanomaterials and Nanotechnologies, University of Chemical Technology and Metallurgy, 8 St. Kliment Ohridski blvd., 1756 Sofia (Bulgaria); Froyer, Gerard, E-mail: gerard.froyer@cnrs-imn.fr [Equipe Physique des Materiaux et Nanostructures, IMN, B.P. 32229, 44322 Nantes cedex 3 (France)

    2012-04-16

    Highlights: Black-Right-Pointing-Pointer Development of a mesoporous silicon with special morphological and chemical properties. Black-Right-Pointing-Pointer Successful embedding of carboxylic-acid terthiophenic monomer in porous silicon. Black-Right-Pointing-Pointer In situ electrochemical polymerization. Black-Right-Pointing-Pointer Polarized IRTF scattering provides the tendency to preferential organization. - Abstract: A mesoporous n-type silicon/poly (3 Prime -acetic acid-2,2 Prime -5 Prime ,2 Prime Prime terthiophene)-(Poly (3TAA) nanocomposite was elaborated in order to realize new components for optoelectronics. Non-oxidized and oxidized porous silicon substrates is used and their physical and chemical properties have been studied by different techniques such as transmission electron microscopy (TEM), scanning electron microscopy (SEM) and Fourier transformed infrared spectroscopy (FTIR). Terthiophene based conjugated structure has been successfully incorporated inside the pores by capillarity at the melting temperature of the monomer. The filling of the monomer into the porous volume was probed by energy dispersive X-ray spectroscopy (EDX). Polarized infrared absorption spectroscopy results indicated that the monomer molecules show preferential orientation along the pore axis, due to hydrogen bonding, in particular that of the carboxylic groups with silanol-rich oxidized porous silicon surface. The 3TAA monomer molecules embedded in porous silicon matrix were electrochemically polymerized in situ and resonance Raman scattering spectroscopy proved the above-mentioned polymerization.

  14. Radiation Effects of n-type, Low Resistivity, Spiral Silicon Drift Detector Hybrid Systems

    International Nuclear Information System (INIS)

    Chen, W.; De Geronimo, G.; Carini, G.A.; Gaskin, J.A.; Keister, J.W.; Li, S.; Li, Z.; Ramsey, B.D.; Siddons, D.P.; Smith, G.C.; Verbitskaya, E.

    2011-01-01

    We have developed a new thin-window, n-type, low-resistivity, spiral silicon drift detector (SDD) array - to be used as an extraterrestrial X-ray spectrometer (in varying environments) for NASA. To achieve low-energy response, a thin SDD entrance window was produced using a previously developed method. These thin-window devices were also produced on lower resistivity, thinner, n-type, silicon material, effectively ensuring their radiation hardness in anticipation of operation in potentially harsh radiation environments (such as found around the Jupiter system). Using the Indiana University Cyclotron Facility beam line RERS1, we irradiated a set of suitable diodes up to 5 Mrad and the latest iteration of our ASICs up to 12 Mrad. Then we irradiated two hybrid detectors consisting of newly, such-produced in-house (BNL) SDD chips bonded with ASICs with doses of 0.25 Mrad and 1 Mrad. Also we irradiated another hybrid detector consisting of previously produced (by KETEK) on n-type, high-resistivity SDD chip bonded with BNL's ASICs with a dose of 1 Mrad. The measurement results of radiated diodes (up to 5 Mrad), ASICs (up to 12 Mrad) and hybrid detectors (up to 1 Mrad) are presented here.

  15. Porosity dependence of positive magnetoconductance in n-type porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Chouaibi, Bassem; Radaoui, Moufid; Benfredj, Amel; Bouchriha, Habib [Laboratoire Materiaux Avances et Phenomenes Quantiques, Faculte des Sciences de Tunis, Universite El Manar, 2092 Campus universitaire, Tunis (Tunisia); Romdhane, Samir [Laboratoire Materiaux Avances et Phenomenes Quantiques, Faculte des Sciences de Tunis, Universite El Manar, 2092 Campus universitaire, Tunis (Tunisia); Faculte des Sciences de Bizerte, 7021 Zarzouna, Bizerte, Universite de Carthage (Tunisia); Bouaicha, Mongi [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia)

    2012-10-15

    Positive magnetoconductance (MC) on n-type porous silicon (PS) based devices was observed at room temperature for low static magnetic field (under 6000 G). We found that the measured MC decreases when the film porosity is increased. Obtained results were analyzed by means of the quasi-1D weak localization (WL) theory. From the dependence of the MC vs. applied magnetic field, we determine the phase coherence length L{sup {phi}}. Good agreement between theoretical and experimental results was found (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Effect of proton and electron-irradiation intensity on radiation-induced damages in silicon bioolar transistors

    International Nuclear Information System (INIS)

    Bannikov, Yu.A.; Gorin, B.M.; Kozhevnikov, V.P.; Mikhnovich, V.V.; Gusev, L.I.

    1981-01-01

    The increase of radiation-induced damages of bipolar n-p-n transistors 8-12 times with the irradiation intensity decrease by protons from 4.07x1010 to 2.5x107 cm-2 x c-1 has been found experimentally. damages of p-n-p transistors vary in the opposite way - they are decreased 2-3 times with the irradiation intensity decrease within the same limits. the dependence of damages on intansity of proton irradiation occurs at the dose rate by three orders less than it has been observed for electron irradiation. the results obtained are explained by the dependence of radiation defectoformation reactions on charge state of defects with account for the role of formation of disordering regions upon proton irradiation [ru

  17. Spin relaxation through lateral spin transport in heavily doped n -type silicon

    Science.gov (United States)

    Ishikawa, M.; Oka, T.; Fujita, Y.; Sugiyama, H.; Saito, Y.; Hamaya, K.

    2017-03-01

    We experimentally study temperature-dependent spin relaxation including lateral spin diffusion in heavily doped n -type silicon (n+-Si ) layers by measuring nonlocal magnetoresistance in small-sized CoFe/MgO/Si lateral spin-valve (LSV) devices. Even at room temperature, we observe large spin signals, 50-fold the magnitude of those in previous works on n+-Si . By measuring spin signals in LSVs with various center-to-center distances between contacts, we reliably evaluate the temperature-dependent spin diffusion length (λSi) and spin lifetime (τSi). We find that the temperature dependence of τSi is affected by that of the diffusion constant in the n+-Si layers, meaning that it is important to understand the temperature dependence of the channel mobility. A possible origin of the temperature dependence of τSi is discussed in terms of the recent theories by Dery and co-workers.

  18. Terahertz optical-Hall effect for multiple valley band materials: n-type silicon

    International Nuclear Information System (INIS)

    Kuehne, P.; Hofmann, T.; Herzinger, C.M.; Schubert, M.

    2011-01-01

    The optical-Hall effect comprises generalized ellipsometry at long wavelengths on samples with free-charge carriers placed within external magnetic fields. Measurement of the anisotropic magneto-optic response allows for the determination of the free-charge carrier properties including spatial anisotropy. In this work we employ the optical-Hall effect at terahertz frequencies for analysis of free-charge carrier properties in multiple valley band materials, for which the optical free-charge carrier contributions originate from multiple Brillouin-zone conduction or valence band minima or maxima, respectively. We investigate exemplarily the room temperature optical-Hall effect in low phosphorous-doped n-type silicon where free electrons are located in six equivalent conduction-band minima near the X-point. We simultaneously determine their free-charge carrier concentration, mobility, and longitudinal and transverse effective mass parameters.

  19. Predictable quantum efficient detector based on n-type silicon photodiodes

    Science.gov (United States)

    Dönsberg, Timo; Manoocheri, Farshid; Sildoja, Meelis; Juntunen, Mikko; Savin, Hele; Tuovinen, Esa; Ronkainen, Hannu; Prunnila, Mika; Merimaa, Mikko; Tang, Chi Kwong; Gran, Jarle; Müller, Ingmar; Werner, Lutz; Rougié, Bernard; Pons, Alicia; Smîd, Marek; Gál, Péter; Lolli, Lapo; Brida, Giorgio; Rastello, Maria Luisa; Ikonen, Erkki

    2017-12-01

    The predictable quantum efficient detector (PQED) consists of two custom-made induced junction photodiodes that are mounted in a wedged trap configuration for the reduction of reflectance losses. Until now, all manufactured PQED photodiodes have been based on a structure where a SiO2 layer is thermally grown on top of p-type silicon substrate. In this paper, we present the design, manufacturing, modelling and characterization of a new type of PQED, where the photodiodes have an Al2O3 layer on top of n-type silicon substrate. Atomic layer deposition is used to deposit the layer to the desired thickness. Two sets of photodiodes with varying oxide thicknesses and substrate doping concentrations were fabricated. In order to predict recombination losses of charge carriers, a 3D model of the photodiode was built into Cogenda Genius semiconductor simulation software. It is important to note that a novel experimental method was developed to obtain values for the 3D model parameters. This makes the prediction of the PQED responsivity a completely autonomous process. Detectors were characterized for temperature dependence of dark current, spatial uniformity of responsivity, reflectance, linearity and absolute responsivity at the wavelengths of 488 nm and 532 nm. For both sets of photodiodes, the modelled and measured responsivities were generally in agreement within the measurement and modelling uncertainties of around 100 parts per million (ppm). There is, however, an indication that the modelled internal quantum deficiency may be underestimated by a similar amount. Moreover, the responsivities of the detectors were spatially uniform within 30 ppm peak-to-peak variation. The results obtained in this research indicate that the n-type induced junction photodiode is a very promising alternative to the existing p-type detectors, and thus give additional credibility to the concept of modelled quantum detector serving as a primary standard. Furthermore, the manufacturing of

  20. N-type nano-silicon powders with ultra-low electrical resistivity as anode materials in lithium ion batteries

    Science.gov (United States)

    Yue, Zhihao; Zhou, Lang; Jin, Chenxin; Xu, Guojun; Liu, Liekai; Tang, Hao; Li, Xiaomin; Sun, Fugen; Huang, Haibin; Yuan, Jiren

    2017-06-01

    N-type silicon wafers with electrical resistivity of 0.001 Ω cm were ball-milled to powders and part of them was further mechanically crushed by sand-milling to smaller particles of nano-size. Both the sand-milled and ball-milled silicon powders were, respectively, mixed with graphite powder (silicon:graphite = 5:95, weight ratio) as anode materials for lithium ion batteries. Electrochemical measurements, including cycle and rate tests, present that anode using sand-milled silicon powder performed much better. The first discharge capacity of sand-milled silicon anode is 549.7 mAh/g and it is still up to 420.4 mAh/g after 100 cycles. Besides, the D50 of sand-milled silicon powder shows ten times smaller in particle size than that of ball-milled silicon powder, and they are 276 nm and 2.6 μm, respectively. In addition, there exist some amorphous silicon components in the sand-milled silicon powder excepting the multi-crystalline silicon, which is very different from the ball-milled silicon powder made up of multi-crystalline silicon only.

  1. Surface Passivation and Antireflection Behavior of ALD on n-Type Silicon for Solar Cells

    Directory of Open Access Journals (Sweden)

    Ing-Song Yu

    2013-01-01

    Full Text Available Atomic layer deposition, a method of excellent step coverage and conformal deposition, was used to deposit TiO2 thin films for the surface passivation and antireflection coating of silicon solar cells. TiO2 thin films deposited at different temperatures (200°C, 300°C, 400°C, and 500°C on FZ n-type silicon wafers are in the thickness of 66.4 nm ± 1.1 nm and in the form of self-limiting growth. For the properties of surface passivation, Si surface is effectively passivated by the 200°C deposition TiO2 thin film. Its effective minority carrier lifetime, measured by the photoconductance decay method, is improved 133% at the injection level of  cm−3. Depending on different deposition parameters and annealing processes, we can control the crystallinity of TiO2 and find low-temperature TiO2 phase (anatase better passivation performance than the high-temperature one (rutile, which is consistent with the results of work function measured by Kelvin probe. In addition, TiO2 thin films on polished Si wafer serve as good ARC layers with refractive index between 2.13 and 2.44 at 632.8 nm. Weighted average reflectance at AM1.5G reduces more than half after the deposition of TiO2. Finally, surface passivation and antireflection properties of TiO2 are stable after the cofire process of conventional crystalline Si solar cells.

  2. Influence of the parameters of pulsed electron irradiation on the efficiency of formation of defects in silicon

    International Nuclear Information System (INIS)

    Abdusattarov, A.G.; Emtsev, V.V.; Mashovets, T.V.

    1989-01-01

    There is as yet no agreement about the mechanism of the influence of the rate of irradiation on the rate of radiation-defect formation in semiconductors. In the case of silicon some authors attribute this mechanism to the influence of excitation of the electron subsystem on the processes resulting in the formation of secondary defects. Other authors are of the opinion that the rate of excitation of the electron subsystem influences the ratio of the probabilities of separation and annihilation of components of a Frenkel pair. A more careful analysis of this situation however forces are to revise this point of view. The authors consider in greater detail the process of homogeneous annihilation of the components of a Frenkel pair in silicon

  3. Selective etching of n-type silicon in pn junction structure in hydrofluoric acid and its application in silicon nanowire fabrication

    International Nuclear Information System (INIS)

    Wang Huiquan; Jin Zhonghe; Zheng Yangming; Ma Huilian; Wang Yuelin; Li Tie

    2008-01-01

    Boron is selectively implanted on the surface of an n-type silicon wafer to form a p-type area surrounded by an n-type area. The wafer is then put into a buffered oxide etch solution. It is found that the n-type area can be selectively etched without illumination, with an etching rate lower than 1 nm min -1 , while the p-type area can be selectively etched under illumination with a much higher etching rate. The possible mechanism of the etching phenomenon is discussed. A simple fabrication process of silicon nanowires is proposed according to the above phenomenon. In this process only traditional micro-electromechanical system technology is used. Dimensions of the fabricated nanowire can be controlled well. A 50 nm wide and 50 nm thick silicon nanowire has been formed using this method

  4. Effects of electron irradiation and temperature on 1 ohm-cm and 10 ohm-cm silicon solar cells

    Science.gov (United States)

    Nicoletta, C. A.

    1973-01-01

    One OHM-cm and 10 OHM-cm silicon solar cells were exposed to 1.0 MeV electrons at a fixed flux of 10 to the 11th power e/sq cm/sec and fluences of 10 to the 13th power, 10 to the 14th power and 10 to the 15th power e/sq.cm. 1-V curves of the cells were made at room temperature, - 63 C and + or - 143 C after each irradiation. A value of 139.5 mw/sq cm was used as AMO incident energy rate per unit area. The 10 OHM-cm cells appear more efficient than 1 OHM-cm cells after exposure to a fluence greater than 10 to the 14th power e/sq cm. The 1.0 MeV electron damage coefficients for both 1 OHM-cm and 10 OHM-cm cells are somewhat less than those for previously irradiated cells at room temperature. The values of the damage coefficients increase as the cell temperatures decrease. Efficiencies pertaining to maximum power output are about the same as those of n on p silicon cells evaluated previously.

  5. Electronic properties and morphology of copper oxide/n-type silicon heterostructures

    Science.gov (United States)

    Lindberg, P. F.; Gorantla, S. M.; Gunnæs, A. E.; Svensson, B. G.; Monakhov, E. V.

    2017-08-01

    Silicon-based tandem heterojunction solar cells utilizing cuprous oxide (Cu2O) as the top absorber layer show promise for high-efficiency conversion and low production cost. In the present study, single phase Cu2O films have been realized on n-type Si substrates by reactive magnetron sputtering at 400 °C. The obtained Cu2O/Si heterostructures have subsequently been heat treated at temperatures in the 400-700 °C range in Ar flow and extensively characterized by x-ray diffraction (XRD) measurements, transmission electron microscopy (TEM) imaging and electrical techniques. The Cu2O/Si heterojunction exhibits a current rectification of ~5 orders of magnitude between forward and reverse bias voltages. High resolution cross-sectional TEM-images show the presence of a ~2 nm thick interfacial SiO2 layer between Cu2O and the Si substrate. Heat treatments below 550 °C result in gradual improvement of crystallinity, indicated by XRD. At and above 550 °C, partial phase transition to cupric oxide (CuO) occurs followed by a complete transition at 700 °C. No increase or decrease of the SiO2 layer is observed after the heat treatment at 550 °C. Finally, a thin Cu-silicide layer (Cu3Si) emerges below the SiO2 layer upon annealing at 550 °C. This silicide layer influences the lateral current and voltage distributions, as evidenced by an increasing effective area of the heterojunction diodes.

  6. A kinetic formulation of piezoresistance in N-type silicon: Application to non-linear effects

    Science.gov (United States)

    Charbonnieras, A. R.; Tellier, C. R.

    1999-07-01

    This paper is devoted to the theoretical study of the influence of the temperature and of the doping on the piezoresistance of N-type silicon. In the first step the fractional change in the resistivity caused by stresses is calculated in the framework of a multivalley model using a kinetic transport formulation based on the Boltzmann transport equation. In the second step shifts in the minima of the conduction band and the resulting shift of the Fermi level are expressed in terms of deformation potentials and of stresses. General expressions for the fundamental linear, π_{11} and π_{12}, and non-linear, π_{111}, π_{112}, π_{122} and π_{123}, piezoresistance coefficients are then derived. Plots of the non-linear piezoresistance coefficients against the reduced shift of the Fermi level or against temperature allow us to characterize the influence of doping and temperature. Finally some attempts are made to estimate the non-linearity for heavily doped semiconductor gauges. Cette publication est consacrée à l'étude théorique de l'influence de la température et du dopage sur la piezorésistivité du silicium type N. Dans une première étape nous adoptons le modèle de vallées et nous utilisons une formulation cinétique du transport électronique faisant appel à l'équation de transport de Boltzmann pour calculer la variation de la résistivité du semiconducteur sous contrainte. Dans la deuxième étape nous exprimons les déplacements des minima de la bande de conduction et du niveau de Fermi en termes de potentiels de déformation et de contraintes. Nous proposons ensuite des expressions générales pour les coefficients piezorésistifs fondamentaux linéaires, π_{11} et π_{12}, et non-linéaires, π_{111}, π_{112}, π_{122} et π_{123}. Des représentations graphiques des variations des coefficients non-linéaires permettent de caractériser l'influence du dopage et de la température. Enfin nous fournissons une première pré-estimation des effets

  7. Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature Dependence

    Directory of Open Access Journals (Sweden)

    Taweewat Krajangsang

    2014-01-01

    Full Text Available Intrinsic hydrogenated amorphous silicon oxide (i-a-SiO:H films were used as front and rear buffer layers in crystalline silicon heterojunction (c-Si-HJ solar cells. The surface passivity and effective lifetime of these i-a-SiO:H films on an n-type silicon wafer were improved by increasing the CO2/SiH4 ratios in the films. Using i-a-SiO:H as the front and rear buffer layers in c-Si-HJ solar cells was investigated. The front i-a-SiO:H buffer layer thickness and the CO2/SiH4 ratio influenced the open-circuit voltage (Voc, fill factor (FF, and temperature coefficient (TC of the c-Si-HJ solar cells. The highest total area efficiency obtained was 18.5% (Voc=700 mV, Jsc=33.5 mA/cm2, and FF=0.79. The TC normalized for this c-Si-HJ solar cell efficiency was −0.301%/°C.

  8. Electrodeposition of cadmium on n-type silicon single crystals of ...

    African Journals Online (AJOL)

    sea

    type silicon have been studied as a function of different potential steps. Within appropriate potential ... including progressive nucleation on active sites and diffusion controlled cluster growth. ..... al CdSe nanocrystals on {111} gold. Surf. Sci.

  9. Photon-Enhanced Thermionic Emission in Cesiated p-Type and n-Type Silicon

    DEFF Research Database (Denmark)

    Reck, Kasper; Dionigi, Fabio; Hansen, Ole

    2014-01-01

    electrons. Efficiencies above 60% have been predicted theoretically for high solar concentration systems. Silicon is an interesting absorber material for high efficiency PETE solar cells, partly due to its mechanical and thermal properties and partly due to its electrical properties, including a close......Photon-enhanced thermionic emission (PETE) is a relatively new concept for high efficiency solar cells that utilize not only the energy of electrons excited across the band gap by photons, as in conventional photovoltaic solar cells, but also the energy usual lost to thermalization of the excited...... to ideal band gap. The work function of silicon is, however, too high for practical PETE implementations. A well-known method for lowering the work function of silicon (and other materials) is to apply approximately a monolayer of cesium to the silicon surface. We present the first measurements of PETE...

  10. Nanostructure Size Determination in N+-Type Porous Silicon by X-Ray diffractometry and Raman Spectroscopy

    International Nuclear Information System (INIS)

    Ramirez Porras, A.

    1997-01-01

    A series of porous silicon surfaces were obtained after different exposition times of electrochemical etching on cristalline n+- type silicon in presence of hydrofluoric acid. These kind of surfaces show photoluminescence when illuminated by UV light. One possible explanation for this is that the treated surface is made up of small crystallites the nanometer scale that split away the semiconductor band edges up to optical photon energies for the band- to -band recombination processes. In this study, a nanometer size determination of such proposed structures was performed by the use of X-Ray Diffractometry and Raman Spectroscopy. The result suggest the consistency between the so called Quantum Confined Model and the experimental results. (Author) [es

  11. Nanostructure Size Determination in N+-Type Porous Silicon by X-Ray diffractometry and Raman Spectroscopy

    CERN Document Server

    Ramirez-Porras, A

    1997-01-01

    A series of porous silicon surfaces were obtained after different exposition times of electrochemical etching on cristalline n+- type silicon in presence of hydrofluoric acid. These kind of surfaces show photoluminescence when illuminated by UV light. One possible explanation for this is that the treated surface is made up of small crystallites the nanometer scale that split away the semiconductor band edges up to optical photon energies for the band- to -band recombination processes. In this study, a nanometer size determination of such proposed structures was performed by the use of X-Ray Diffractometry and Raman Spectroscopy. The result suggest the consistency between the so called Quantum Confined Model and the experimental results. (Author)

  12. Capacity spectroscopy of minority-carrier radiation traps in n-type silicon

    International Nuclear Information System (INIS)

    Kuchinskij, P.V.; Lomako, V.M.; Shakhlevich, L.N.

    1987-01-01

    Minority charge-carrier radiation traps in n-silicon, produced by neutron transmutation doping (NTD) and zone melting method, were studied using unsteady capacity spectroscopy method. Studying the parameters of defects, formed in the lower half of the restricted zone, was performed using minority carrier injection by forward current pulses. Samples were p + -n-structures, produced on the basis of silicon with different oxygen content. It is shown, that a trap with activation energy ≅E v +0.34 eV appears to be the main defect in oxygen p-silicon. Investigation into thermal stability has shown, that centers with E v +0.34 eV and E v +0.27 eV activation energies are annealed within the same temperature interval (300-400 deg C)

  13. The effect of hydrogen on the morphology of n-type silicon electrodes under electrochemical conditions

    DEFF Research Database (Denmark)

    Goldar, A.; Roser, S.J.; Caruana, D.

    2001-01-01

    the changes in the shape of the total reflection feature. We assume that the change in the morphology of the surface is due to the diffusion of hydrogen in the silicon electrode. This assumption allow us to model the changes in the reflected intensity at two different angles and find the diffusion exponent...

  14. Morphological and optical properties of n-type porous silicon: effect ...

    Indian Academy of Sciences (India)

    Method of PS fabrication is by photo-assisted electrochemical etching with different etching current densities ... Observation of room temperature visible photoluminescence (PL) [4,5] in PS has ... are pre-treated with HF and ethanol in an ultrasonic bath for 5 min to remove any native oxide present on the silicon surface [16].

  15. Progress in low-cost n-type silicon solar cell technology

    Energy Technology Data Exchange (ETDEWEB)

    Geerligs, L.J.; Romijn, G.; Burgers, A.R.; Guillevin, N.; Weeber, A.W.; Bultman, J.H. [ECN Solar Energy, Petten (Netherlands); Wang, Hongfang; Lang, Fang; Zhao, Wenchao; Li, Gaofei; Hu, Zhiyan; Xiong, Jingfeng [Yingli Green Energy Holding Co., LTD, Baoding (China); Vlooswijk, A. [Tempress Systems, Vaassen (Netherlands)

    2012-06-15

    This article will review our recent progress in development of high-efficiency cells on n-type monocrystalline Si wafers. With boron-doped front emitter, phosphorous BSF, and screen-printed metallisation, at this moment such cells reach an efficiency of over 19%. We describe recent results of processing with reduced front contact area, and improved BSF and improved rear surface passivation, which are key parameters that limit the cell efficiency. The improved processing leads to an efficiency of 20%. The cell process has also been adopted for fabrication of metal-wrap-through back-contact cells. Without the improved contact recombination and BSF, an MWT cell efficiency of 19.7% is reached, 0.3% higher than the corresponding 'standard' (non-back-contact) cells.

  16. The annealing of interstitial carbon atoms in high-resistivity n-type silicon after proton irradiation

    CERN Document Server

    Kuhnke, M; Lindström, G

    2002-01-01

    The annealing of interstitial carbon C sub i after 7-10 MeV and 23 GeV proton irradiations at room temperature in high-resistivity n-type silicon is investigated. Deep level transient spectroscopy is used to determine the defect parameters. The annealing characteristics of the impurity defects C sub i , C sub i C sub s , C sub i O sub i and VO sub i suggest that the mobile C sub i atoms are also captured at divacancy VV sites at the cluster peripheries and not only at C sub s and O sub i sites in the silicon bulk. The deviation of the electrical filling characteristic of C sub i from the characteristic of a homogeneously distributed defect can be explained by an aggregation of C sub i atoms in the environment of the clusters. The capture rate of electrons into defects located in the cluster environment is reduced due to a positive space charge region surrounding the negatively charged cluster core. The optical filling characteristic of C sub i suggests that the change of the triangle-shaped electric field dis...

  17. In situ atomic-level observation of the formation of platinum silicide at platinum-silicon oxide interfaces under electron irradiation

    Directory of Open Access Journals (Sweden)

    Takeshi Nagase

    2018-05-01

    Full Text Available In situ atomic-level observation of the formation of Pt2Si at Pt/SiOx interface by electronic excitation under electron irradiation was performed by using scanning transmission electron microscopy. Scanning of an electron-beam probe stimulates silicide formation at the Pt/SiOx interface; the change in the Pt column corresponding to Pt2Si formation with a crystallographic orientation of (001Pt//(001Pt2Si and [110]Pt//[110]Pt2Si was observed in high-angle annular dark-field images.

  18. Detection of protein kinases P38 based on reflectance spectroscopy with n-type porous silicon microcavities for diagnosing hydatidosis hydatid disease

    Science.gov (United States)

    Lv, Xiaoyi; Lv, Guodong; Jia, Zhenhong; Wang, Jiajia; Mo, Jiaqing

    2014-11-01

    Detection of protein kinases P38 of Echinococcus granulosus and its homologous antibody have great value for early diagnosis and treatment of hydatidosis hydatid disease. In this experiment, n-type mesoporous silicon microcavities have been successfully fabricated without KOH etching or oxidants treatment that reported in other literature. We observed the changes of the reflectivity spectrum before and after the antigen-antibody reaction by n-type mesoporous silicon microcavities. The binding of protein kinases P38 and its homologous antibody causes red shifts in the reflection spectrum of the sensor, and the red shift was proportional to the protein kinases P38 concentration with linear relationship.

  19. Deep level transient spectroscopic analysis of p/n junction implanted with boron in n-type silicon substrate

    Science.gov (United States)

    Wakimoto, Hiroki; Nakazawa, Haruo; Matsumoto, Takashi; Nabetani, Yoichi

    2018-04-01

    For P-i-N diodes implanted and activated with boron ions into a highly-resistive n-type Si substrate, it is found that there is a large difference in the leakage current between relatively low temperature furnace annealing (FA) and high temperature laser annealing (LA) for activation of the p-layer. Since electron trap levels in the n-type Si substrate is supposed to be affected, we report on Deep Level Transient Spectroscopy (DLTS) measurement results investigating what kinds of trap levels are formed. As a result, three kinds of electron trap levels are confirmed in the region of 1-4 μm from the p-n junction. Each DLTS peak intensity of the LA sample is smaller than that of the FA sample. In particular, with respect to the trap level which is the closest to the silicon band gap center most affecting the reverse leakage current, it was not detected in LA. It is considered that the electron trap levels are decreased due to the thermal energy of LA. On the other hand, four kinds of trap levels are confirmed in the region of 38-44 μm from the p-n junction and the DLTS peak intensities of FA and LA are almost the same, considering that the thermal energy of LA has not reached this area. The large difference between the reverse leakage current of FA and LA is considered to be affected by the deep trap level estimated to be the interstitial boron.

  20. Harnessing light energy with a planar transparent hybrid of graphene/single wall carbon nanotube/n-type silicon heterojunction solar cell

    DEFF Research Database (Denmark)

    Chen, Leifeng; Yu, Hua; Zhong, Jiasong

    2015-01-01

    The photovoltaic conversion efficiency of a solar cell fabricated by a simple electrophoretic method with a planar transparent hybrid of graphenes (GPs) and single wall carbon nanotubes (SCNTs)/n-type silicon heterojunction was significantly increased compared to GPs/n-Si and SCNTs/n-Si solar cells...

  1. Tunnel oxide passivated rear contact for large area n-type front junction silicon solar cells providing excellent carrier selectivity

    Directory of Open Access Journals (Sweden)

    Yuguo Tao

    2016-01-01

    Full Text Available Carrier-selective contact with low minority carrier recombination and efficient majority carrier transport is mandatory to eliminate metal-induced recombination for higher energy conversion efficiency for silicon (Si solar cells. In the present study, the carrier-selective contact consists of an ultra-thin tunnel oxide and a phosphorus-doped polycrystalline Si (poly-Si thin film formed by plasma enhanced chemical vapor deposition (PECVD and subsequent thermal crystallization. It is shown that the poly-Si film properties (doping level, crystallization and dopant activation anneal temperature are crucial for achieving excellent contact passivation quality. It is also demonstrated quantitatively that the tunnel oxide plays a critical role in this tunnel oxide passivated contact (TOPCON scheme to realize desired carrier selectivity. Presence of tunnel oxide increases the implied Voc (iVoc by ~ 125 mV. The iVoc value as high as 728 mV is achieved on symmetric structure with TOPCON on both sides. Large area (239 cm2 n-type Czochralski (Cz Si solar cells are fabricated with homogeneous implanted boron emitter and screen-printed contact on the front and TOPCON on the back, achieving 21.2% cell efficiency. Detailed analysis shows that the performance of these cells is mainly limited by boron emitter recombination on the front side.

  2. Electron irradiation of power transistors

    International Nuclear Information System (INIS)

    Hower, P.L.; Fiedor, R.J.

    1982-01-01

    A method for reducing storage time and gain parameters in a semiconductor transistor includes the step of subjecting the transistor to electron irradiation of a dosage determined from measurements of the parameters of a test batch of transistors. Reduction of carrier lifetime by proton bombardment and gold doping is mentioned as an alternative to electron irradiation. (author)

  3. Electron irradiation of zeolites

    International Nuclear Information System (INIS)

    Wang, S.X.; Wang, L.M.; Ewing, R.C.

    1999-01-01

    Three different zeolites (analcime, natrolite, and zeolite-Y) were irradiated with 200 keV and 400 keV electrons. All zeolites amorphized under a relatively low electron fluence. The transformation from the crystalline-to-amorphous state was continuous and homogeneous. The electron fluences for amorphization of the three zeolites at room temperature were: 7.0 x 10 19 e - /cm 2 (analcime), 1.8 x 10 20 e - /cm 2 (natrolite), and 3.4 x 10 20 e - /cm 2 (zeolite-Y). The different susceptibilities to amorphization are attributed to the different channel sizes in the structures which are the pathways for the release of water molecules and Na + . Natrolite formed bubbles under electron irradiation, even before complete amorphization. Analcime formed bubbles after amorphization. Zeolite-Y did not form bubbles under irradiation. The differences in bubble formation are attributed to the different channel sizes of the three zeolites. The amorphization dose was also measured at different temperatures. An inverse temperature dependence of amorphization dose was observed for all three zeolites: electron dose for amorphization decreased with increasing temperature. This unique temperature effect is attributed to the fact that zeolites are thermally unstable. A semi-empirical model was derived to describe the temperature effect of amorphization in these zeolites

  4. Positron annihilation lifetime in float-zone n-type silicon irradiated by fast electrons: a thermally stable vacancy defect

    International Nuclear Information System (INIS)

    Arutyunov, Nikolay; Emtsev, Vadim; Oganesyan, Gagik; Krause-Rehberg, Reinhard; Elsayed, Mohamed; Kozlovskii, Vitalii

    2016-01-01

    Temperature dependency of the average positron lifetime has been investigated for n-type float-zone silicon, n-FZ-Si(P), subjected to irradiation with 0.9 MeV electrons at RT. In the course of the isochronal annealing a new defect-related temperature-dependent pattern of the positron lifetime spectra has been revealed. Beyond the well known intervals of isochronal annealing of acceptor-like defects such as E-centers, divacancies and A-centers, the positron annihilation at the vacancy defects has been observed in the course of the isochronal annealing from ∝ 320 C up to the limit of reliable detecting of the defect-related positron annihilation lifetime at ≥ 500 C. These data correlate with the ones of recovery of the concentration of the charge carriers and their mobility which is found to continue in the course of annealing to ∝ 570 C; the annealing is accomplished at ∝650 C. A thermally stable complex consisting of the open vacancy volume and the phosphorus impurity atom, V_o_p-P, is suggested as a possible candidate for interpreting the data obtained by the positron annihilation lifetime spectroscopy. An extended couple of semi-vacancies, 2V_s_-_e_x_t, as well as a relaxed inwards a couple of vacancies, 2V_i_n_w, are suggested as the open vacancy volume V_o_p to be probed with the positron. It is argued that a high thermal stability of the V_s_-_e_x_t PV_s_-_e_x_t (or V_i_n_wPV_i_n_w_.) configuration is contributed by the efficiency of PSi_5 bonding. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Solid phase epitaxy on N-type polysilicon films formed by aluminium induced crystallization of amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Tuezuen, O., E-mail: Ozge.Tuzun@iness.c-strasbourg.f [InESS, UMR 7163 CNRS-UdS, 23 rue du Loess, F-67037 Strasbourg Cedex 2 (France); Slaoui, A.; Roques, S.; Focsa, A. [InESS, UMR 7163 CNRS-UdS, 23 rue du Loess, F-67037 Strasbourg Cedex 2 (France); Jomard, F.; Ballutaud, D. [GEMaC-UMR 8635 CNRS, 1 place Aristide Briand, F-92195 Meudon (France)

    2009-10-01

    In this work, undoped amorphous silicon layers were deposited on n-type AIC seed films and then annealed at different temperatures for epitaxial growth. The epitaxy was carried out using halogen lamps (rapid thermal process or RTP) or a tube conventional furnace (CTP). We investigated the morphology of the resulting 2 {mu}m thick epi-layers by means of optical microscopy. An average grain size of about 40 {mu}m is formed after 90 s annealing at 1000 {sup o}C in RTP. The stress and degree of crystallinity of the epi-layers were studied by micro-Raman Spectroscopy and UV-visible spectrometer as a function of annealing time. The presence of compressive stress is observed from the peak position which shifts from 520.0 cm{sup -1} to 521.0 cm{sup -1} and 522.3 cm{sup -1} after CTP annealing for 10 min and 90 min, respectively. It is shown that the full width at half maximum (FWHM) varies from 9.8 cm{sup -1} to 15.6 cm{sup -1}, and the magnitude of stress is changing from 325 MPa to 650 MPa. Finally, the highest crystallinity is achieved after annealing at 1000 {sup o}C for 90 min in a tube furnace exhibiting a crystalline fraction of 81.5%. X-ray diffraction technique was used to determine the preferential orientation of the poly-Si thin films formed by SPE technique on n{sup +} type AIC layer. The preferential orientation is <100> for all annealing times at 1000 {sup o}C.

  6. Proposal of a neutron transmutation doping facility for n-type spherical silicon solar cell at high-temperature engineering test reactor.

    Science.gov (United States)

    Ho, Hai Quan; Honda, Yuki; Motoyama, Mizuki; Hamamoto, Shimpei; Ishii, Toshiaki; Ishitsuka, Etsuo

    2018-05-01

    The p-type spherical silicon solar cell is a candidate for future solar energy with low fabrication cost, however, its conversion efficiency is only about 10%. The conversion efficiency of a silicon solar cell can be increased by using n-type silicon semiconductor as a substrate. This study proposed a new method of neutron transmutation doping silicon (NTD-Si) for producing the n-type spherical solar cell, in which the Si-particles are irradiated directly instead of the cylinder Si-ingot as in the conventional NTD-Si. By using a 'screw', an identical resistivity could be achieved for the Si-particles without a complicated procedure as in the NTD with Si-ingot. Also, the reactivity and neutron flux swing could be kept to a minimum because of the continuous irradiation of the Si-particles. A high temperature engineering test reactor (HTTR), which is located in Japan, was used as a reference reactor in this study. Neutronic calculations showed that the HTTR has a capability to produce about 40t/EFPY of 10Ωcm resistivity Si-particles for fabrication of the n-type spherical solar cell. Copyright © 2018 Elsevier Ltd. All rights reserved.

  7. Minimizing guard ring dead space in silicon detectors with an n-type guard ring at the edge of the detector

    International Nuclear Information System (INIS)

    Palviainen, Tanja; Tuuva, Tuure; Leinonen, Kari

    2007-01-01

    Detectors with n-type silicon with an n + -type guard ring were investigated. In the present work, a new p + /n/n + detector structure with an n + guard ring is described. The guard ring is placed at the edge of the detector. The detector depletion region extends also sideways, allowing for signal collection very close to the n-guard ring. In this kind of detector structure, the dead space of the detector is minimized to be only below the guard ring. This is proved by simulations done using Silvaco/ATLAS software

  8. Influence of the transition region between p- and n-type polycrystalline silicon passivating contacts on the performance of interdigitated back contact silicon solar cells

    Science.gov (United States)

    Reichel, Christian; Müller, Ralph; Feldmann, Frank; Richter, Armin; Hermle, Martin; Glunz, Stefan W.

    2017-11-01

    Passivating contacts based on thin tunneling oxides (SiOx) and n- and p-type semi-crystalline or polycrystalline silicon (poly-Si) enable high passivation quality and low contact resistivity, but the integration of these p+/n emitter and n+/n back surface field junctions into interdigitated back contact silicon solar cells poses a challenge due to high recombination at the transition region from p-type to n-type poly-Si. Here, the transition region was created in different configurations—(a) p+ and n+ poly-Si regions are in direct contact with each other ("pn-junction"), using a local overcompensation (counterdoping) as a self-aligning process, (b) undoped (intrinsic) poly-Si remains between the p+ and n+ poly-Si regions ("pin-junction"), and (c) etched trenches separate the p+ and n+ poly-Si regions ("trench")—in order to investigate the recombination characteristics and the reverse breakdown behavior of these solar cells. Illumination- and injection-dependent quasi-steady state photoluminescence (suns-PL) and open-circuit voltage (suns-Voc) measurements revealed that non-ideal recombination in the space charge regions with high local ideality factors as well as recombination in shunted regions strongly limited the performance of solar cells without a trench. In contrast, solar cells with a trench allowed for open-circuit voltage (Voc) of 720 mV, fill factor of 79.6%, short-circuit current (Jsc) of 41.3 mA/cm2, and a conversion efficiencies (η) of 23.7%, showing that a lowly conducting and highly passivating intermediate layer between the p+ and n+ poly-Si regions is mandatory. Independent of the configuration, no hysteresis was observed upon multiple stresses in reverse direction, indicating a controlled and homogeneously distributed breakdown, but with different breakdown characteristics.

  9. Surface passivation of n-type doped black silicon by atomic-layer-deposited SiO2/Al2O3 stacks

    Science.gov (United States)

    van de Loo, B. W. H.; Ingenito, A.; Verheijen, M. A.; Isabella, O.; Zeman, M.; Kessels, W. M. M.

    2017-06-01

    Black silicon (b-Si) nanotextures can significantly enhance the light absorption of crystalline silicon solar cells. Nevertheless, for a successful application of b-Si textures in industrially relevant solar cell architectures, it is imperative that charge-carrier recombination at particularly highly n-type doped black Si surfaces is further suppressed. In this work, this issue is addressed through systematically studying lowly and highly doped b-Si surfaces, which are passivated by atomic-layer-deposited Al2O3 films or SiO2/Al2O3 stacks. In lowly doped b-Si textures, a very low surface recombination prefactor of 16 fA/cm2 was found after surface passivation by Al2O3. The excellent passivation was achieved after a dedicated wet-chemical treatment prior to surface passivation, which removed structural defects which resided below the b-Si surface. On highly n-type doped b-Si, the SiO2/Al2O3 stacks result in a considerable improvement in surface passivation compared to the Al2O3 single layers. The atomic-layer-deposited SiO2/Al2O3 stacks therefore provide a low-temperature, industrially viable passivation method, enabling the application of highly n- type doped b-Si nanotextures in industrial silicon solar cells.

  10. Surface passivation at low temperature of p- and n-type silicon wafers using a double layer a-Si:H/SiNx:H

    International Nuclear Information System (INIS)

    Focsa, A.; Slaoui, A.; Charifi, H.; Stoquert, J.P.; Roques, S.

    2009-01-01

    Surface passivation of bare silicon or emitter region is of great importance towards high efficiency solar cells. Nowadays, this is usually accomplished by depositing an hydrogenated amorphous silicon nitride (a-SiNx:H) layer on n + p structures that serves also as an excellent antireflection layer. On the other hand, surface passivation of p-type silicon is better assured by an hydrogenated amorphous silicon (a-Si:H) layer but suffers from optical properties. In this paper, we reported the surface passivation of p-type and n-type silicon wafers by using an a-Si:H/SiNx:H double layer formed at low temperature (50-400 deg. C) with ECR-PECVD technique. We first investigated the optical properties (refraction index, reflectance, and absorbance) and structural properties by FTIR (bonds Si-H, N-H) of the deposited films. The hydrogen content in the layers was determined by elastic recoil detection analysis (ERDA). The passivation effect was monitored by measuring the minority carrier effective lifetime vs. different parameters such as deposition temperature and amorphous silicon layer thickness. We have found that a 10-15 nm a-Si film with an 86 nm thick SiN layer provides an optimum of the minority carriers' lifetime. It increases from an initial value of about 50-70 μs for a-Si:H to about 760 and 800 μs for a-Si:H/SiNx:H on Cz-pSi and FZ-nSi, respectively, at an injection level 2 x 10 15 cm -3 . The effective surface recombination velocity, S eff , for passivated double layer on n-type FZ Si reached 11 cm/s and for FZ-pSi-14 cm/s, and for Cz-pSi-16-20 cm/s. Effect of hydrogen in the passivation process is discussed.

  11. The ALU+ concept: n-type silicon solar cells with surface passivated screen-printed aluminum-alloyed rear emitter

    NARCIS (Netherlands)

    Bock, R.; Schmidt, J.; Mau, S.; Hoex, B.; Kessels, W.M.M.; Brendel, R.

    2009-01-01

    Aluminum-doped p-type (Al-p+) silicon emitters fabricated by means of screen-printing and firing are effectively passivated by plasma-enhanced chemicalvapor deposited (PECVD) amorphous silicon (a-Si) and atomic-layer-deposited (ALD) aluminum oxide (Al2O3) as well as Al2O3/SiNx stacks, where the

  12. Wet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation

    OpenAIRE

    Meddeb, H.; Bearda, Twan; Payo, M. Recaman; Abdelwahab, I.; Abdulraheem, Yaser; Ezzaouia, H.; Gordon, I.; Szlufcik, J.; POORTMANS, Jef

    2015-01-01

    The influence of the cleaning process on the amorphous silicon passivation of homojunction emitters is investigated. A significant variation in the passivation quality following different cleaning sequences is not observed, even though differences in cleaning performance are evident. These results point out the effectiveness of our cleaning treatment and provide a hydrogen termination for intrinsic amorphous silicon passivation. A post-deposition treatment improves the passivation level yield...

  13. Minimizing guard ring dead space in silicon detectors with an n-type guard ring at the edge of the detector

    Energy Technology Data Exchange (ETDEWEB)

    Palviainen, Tanja [Lappeenranta University of Technology, P.O. Box 20, FIN-53851 Lappeenranta (Finland)]. E-mail: tanja.palviainen@lut.fi; Tuuva, Tuure [Lappeenranta University of Technology, P.O. Box 20, FIN-53851 Lappeenranta (Finland); Leinonen, Kari [Lappeenranta University of Technology, P.O. Box 20, FIN-53851 Lappeenranta (Finland)

    2007-04-01

    Detectors with n-type silicon with an n{sup +}-type guard ring were investigated. In the present work, a new p{sup +}/n/n{sup +} detector structure with an n{sup +} guard ring is described. The guard ring is placed at the edge of the detector. The detector depletion region extends also sideways, allowing for signal collection very close to the n-guard ring. In this kind of detector structure, the dead space of the detector is minimized to be only below the guard ring. This is proved by simulations done using Silvaco/ATLAS software.

  14. Rectification properties of n-type nanocrystalline diamond heterojunctions to p-type silicon carbide at high temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Goto, Masaki; Amano, Ryo; Shimoda, Naotaka [Graduate School of Automotive Science, Kyushu University, Nishiku, Fukuoka 819-0395 (Japan); Kato, Yoshimine, E-mail: yoshimine.kato@zaiko.kyushu-u.ac.jp [Department of Materials Science and Engineering, Kyushu University, Nishiku, Fukuoka 819-0395 (Japan); Teii, Kungen [Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan)

    2014-04-14

    Highly rectifying heterojunctions of n-type nanocrystalline diamond (NCD) films to p-type 4H-SiC substrates are fabricated to develop p-n junction diodes operable at high temperatures. In reverse bias condition, a potential barrier for holes at the interface prevents the injection of reverse leakage current from the NCD into the SiC and achieves the high rectification ratios of the order of 10{sup 7} at room temperature and 10{sup 4} even at 570 K. The mechanism of the forward current injection is described with the upward shift of the defect energy levels in the NCD to the conduction band of the SiC by forward biasing. The forward current shows different behavior from typical SiC Schottky diodes at high temperatures.

  15. Effects of thermal budget in n-type bifacial solar cell fabrication processes on effective lifetime of crystalline silicon

    Directory of Open Access Journals (Sweden)

    Tomihisa Tachibana

    2017-04-01

    Full Text Available The effects of residual C on cell properties are investigated from the view point of thermal budget in the n-type bifacial cell processes. Implied Voc obtained from wafers with same Oi concentration depend on the thermal budgets decreases as the Cs concentration increases. The Voc values vary depending on the wafer with different growth cooling rate. To analyze the effect of thermal budget correspond to solar cell fabrication process, CZ wafers with almost the same Oi concentrations are prepared. One of the wafers with relatively high residual Cs concentration shows the longer lifetime than the initial value after the 950 oC annealing step. On the other hand, the lifetime of a wafer with relatively low Cs concentration dramatically decreased by the same process due to the O segregation. These results suggest that it is important to choose appropriate wafer specification, starting with feedstock material, for increasing the solar cell efficiency.

  16. Microstructure and mechanical properties of thermoelectric nanostructured n-type silicon-germanium alloys synthesized employing spark plasma sintering

    Energy Technology Data Exchange (ETDEWEB)

    Bathula, Sivaiah [CSIR-Network of Institutes for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Department of Applied Physics, Delhi Technological University, Delhi (India); Gahtori, Bhasker; Tripathy, S. K.; Tyagi, Kriti; Srivastava, A. K.; Dhar, Ajay, E-mail: adhar@nplindia.org [CSIR-Network of Institutes for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Jayasimhadri, M. [Department of Applied Physics, Delhi Technological University, Delhi (India)

    2014-08-11

    Owing to their high thermoelectric (TE) figure-of-merit, nanostructured Si{sub 80}Ge{sub 20} alloys are evolving as a potential replacement for their bulk counterparts in designing efficient radio-isotope TE generators. However, as the mechanical properties of these alloys are equally important in order to avoid in-service catastrophic failure of their TE modules, we report the strength, hardness, fracture toughness, and thermal shock resistance of nanostructured n-type Si{sub 80}Ge{sub 20} alloys synthesized employing spark plasma sintering of mechanically alloyed nanopowders of its constituent elements. These mechanical properties show a significant enhancement, which has been correlated with the microstructural features at nano-scale, delineated by transmission electron microscopy.

  17. Low-field microwave absorption and magnetoresistance in iron nanostructures grown by electrodeposition on n-type lightly doped silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Felix, J.F. [Universidade Federal de Viçosa-UFV, Departamento de Física, 36570-900 Viçosa, MG (Brazil); Universidade de Brasília-UnB, Instituto de Física, Núcleo de Física Aplicada, 70910-900 Brasília, DF (Brazil); Figueiredo, L.C. [Universidade de Brasília-UnB, Instituto de Física, Núcleo de Física Aplicada, 70910-900 Brasília, DF (Brazil); Mendes, J.B.S. [Universidade Federal de Viçosa-UFV, Departamento de Física, 36570-900 Viçosa, MG (Brazil); Morais, P.C. [Universidade de Brasília-UnB, Instituto de Física, Núcleo de Física Aplicada, 70910-900 Brasília, DF (Brazil); Huazhong University of Science and Technology, School of Automation, 430074 Wuhan (China); Araujo, C.I.L. de., E-mail: dearaujo@ufv.br [Universidade de Brasília-UnB, Instituto de Física, Núcleo de Física Aplicada, 70910-900 Brasília, DF (Brazil)

    2015-12-01

    In this study we investigate magnetic properties, surface morphology and crystal structure in iron nanoclusters electrodeposited on lightly doped (100) n-type silicon substrates. Our goal is to investigate the spin injection and detection in the Fe/Si lateral structures. The samples obtained under electric percolation were characterized by magnetoresistive and magnetic resonance measurements with cycling the sweeping applied field in order to understand the spin dynamics in the as-produced samples. The observed hysteresis in the magnetic resonance spectra, plus the presence of a broad peak in the non-saturated regime confirming the low field microwave absorption (LFMA), were correlated to the peaks and slopes found in the magnetoresistance curves. The results suggest long range spin injection and detection in low resistive silicon and the magnetic resonance technique is herein introduced as a promising tool for analysis of electric contactless magnetoresistive samples. - Highlights: • Electrodeposition of Fe nanostructures on high resistive silicon substrates. • Spin polarized current among clusters through Si suggested by isotropic magnetoresistance. • Low field microwave absorption arising from the sample shape anisotropy. • Contactless magnetoresistive device characterization by resonance measurements.

  18. Single and double acceptor-levels of a carbon-hydrogen defect in n-type silicon

    Energy Technology Data Exchange (ETDEWEB)

    Stübner, R.; Scheffler, L.; Kolkovsky, Vl., E-mail: kolkov@ifpan.edu.pl; Weber, J. [Technische Universität Dresden, 01062 Dresden (Germany)

    2016-05-28

    In the present study, we discuss the origin of two dominant deep levels (E42 and E262) observed in n-type Si, which is subjected to hydrogenation by wet chemical etching or a dc H-plasma treatment. Their activation enthalpies determined from Laplace deep level transient spectroscopy measurements are E{sub C}-0.06 eV (E42) and E{sub C}-0.51 eV (E262). The similar annealing behavior and identical depth profiles of E42 and E262 correlate them with two different charge states of the same defect. E262 is attributed to a single acceptor state due to the absence of the Poole-Frenkel effect and the lack of a capture barrier for electrons. The emission rate of E42 shows a characteristic enhancement with the electric field, which is consistent with the assignment to a double acceptor state. In samples with different carbon and hydrogen content, the depth profiles of E262 can be explained by a defect with one H-atom and one C-atom. From a comparison with earlier calculations [Andersen et al., Phys. Rev. B 66, 235205 (2002)], we attribute E42 to the double acceptor and E262 to the single acceptor state of the CH{sub 1AB} configuration, where one H atom is directly bound to carbon in the anti-bonding position.

  19. A-centres build-up kinetics in the conductive matrix of pulled n-type silicon with calculation of their recharges at defect clusters

    International Nuclear Information System (INIS)

    Dolgolenko, A.P.; Fishchuk, I.I.

    1981-01-01

    Pulled n-Si samples with rho approximately 40 Ωcm are investigated after irradiation with different doses of fast-pile neutrons. It is known that the simple defects are created not only in the conductive matrix but also in the region of the space charge of defect clusters. Then the charge state, for example, of A-centres in the region of the space charge is defined by both, the temperature and the value of the electrostatical potential. If this circumstance is not taken into account the calculation of the conductive volume is not precise enough. In the present paper the temperature dependence of the volume fraction is calculated, in which the space charge of defect clusters occurs, taking into account the recharges of A-centres in the region of the space charge. Using the expression obtained the A-centres build-up kinetics in the conductive matrix of pulled n-type silicon is calculated. (author)

  20. High Sensitivity Detection of CdSe/ZnS Quantum Dot-Labeled DNA Based on N-type Porous Silicon Microcavities.

    Science.gov (United States)

    Lv, Changwu; Jia, Zhenhong; Lv, Jie; Zhang, Hongyan; Li, Yanyu

    2017-01-01

    N-type macroporous silicon microcavity structures were prepared using electrochemical etching in an HF solution in the absence of light and oxidants. The CdSe/ZnS water-soluble quantum dot-labeled DNA target molecules were detected by monitoring the microcavity reflectance spectrum, which was characterized by the reflectance spectrum defect state position shift resulting from changes to the structures' refractive index. Quantum dots with a high refractive index and DNA coupling can improve the detection sensitivity by amplifying the optical response signals of the target DNA. The experimental results show that DNA combined with a quantum dot can improve the sensitivity of DNA detection by more than five times.

  1. Effect of low temperature and electron irradiation on the volt-ampere characteristics of silicon structures with p-n junctions; Vliyanie nizkikh temperatur i ehlektronnogo oblucheniya na vol`t-ampernye kharakteristiki kremnievykh struktur s p-n perekhodami

    Energy Technology Data Exchange (ETDEWEB)

    Korshunov, F P [and others

    1994-12-31

    Features of volt-ampere characteristic behaviour of silicon, diffusion p-n-p structures making up the basis of force diodes under their operation in the mode of nominal and overload current densities are investigated.

  2. Lithium - An impurity of interest in radiation effects of silicon.

    Science.gov (United States)

    Naber, J. A.; Horiye, H.; Passenheim, B. C.

    1971-01-01

    Study of the introduction and annealing of defects produced in lithium-diffused float-zone n-type silicon by 30-MeV electrons and fission neutrons. The introduction rate of recombination centers produced by electron irradiation is dependent on lithium concentration and for neutron irradiation is independent of lithium concentration. The introduction rate of Si-B1 centers also depends on the lithium concentration. The annealing of electron- and neutron-produced recombination centers, Si-B1 centers, and Si-G7 centers in lithium-diffused silicon occurs at much lower temperatures than in nondiffused material.

  3. Surface passivation of n-type doped black silicon by atomic-layer-deposited SiO2/Al2O3 stacks

    NARCIS (Netherlands)

    van de Loo, B.W.H.; Ingenito, A.; Verheijen, M.A.; Isabella, O.; Zeman, M.; Kessels, W.M.M.

    2017-01-01

    Black silicon (b-Si) nanotextures can significantly enhance the light absorption of crystalline silicon solar cells. Nevertheless, for a successful application of b-Si textures in industrially relevant solar cell architectures, it is imperative that charge-carrier recombination at particularly

  4. High-dose MeV electron irradiation of Si-SiO2 structures implanted with high doses Si+

    Science.gov (United States)

    Kaschieva, S.; Angelov, Ch; Dmitriev, S. N.

    2018-03-01

    The influence was studied of 22-MeV electron irradiation on Si-SiO2 structures implanted with high-fluence Si+ ions. Our earlier works demonstrated that Si redistribution is observed in Si+-ion-implanted Si-SiO2 structures (after MeV electron irradiation) only in the case when ion implantation is carried out with a higher fluence (1016 cm-2). We focused our attention on the interaction of high-dose MeV electron irradiation (6.0×1016 cm-2) with n-Si-SiO2 structures implanted with Si+ ions (fluence 5.4×1016 cm-2 of the same order magnitude). The redistribution of both oxygen and silicon atoms in the implanted Si-SiO2 samples after MeV electron irradiation was studied by Rutherford back-scattering (RBS) spectroscopy in combination with a channeling technique (RBS/C). Our results demonstrated that the redistribution of oxygen and silicon atoms in the implanted samples reaches saturation after these high doses of MeV electron irradiation. The transformation of amorphous SiO2 surface into crystalline Si nanostructures (after MeV electron irradiation) was evidenced by atomic force microscopy (AFM). Silicon nanocrystals are formed on the SiO2 surface after MeV electron irradiation. The shape and number of the Si nanocrystals on the SiO2 surface depend on the MeV electron irradiation, while their size increases with the dose. The mean Si nanocrystals height is 16-20 nm after irradiation with MeV electrons at the dose of 6.0×1016 cm-2.

  5. Positron annihilation and electron spin resonance studies of defects in electron-irradiated 3C-SiC

    International Nuclear Information System (INIS)

    Itoh, Hisayoshi; Yoshikawa, Masahito; Tanigawa, Shoichiro; Nashiyama, Isamu; Misawa, Shunji; Okumura, Hajime; Yoshida, Sadafumi.

    1992-01-01

    Defects induced by 1 MeV electron-irradiation in cubic silicon carbide (3C-SiC) epitaxially grown by chemical vapor deposition have been studied with positron annihilation and electron spin resonance (ESR). Doppler broadened energy spectra of annihilation γ-rays obtained by using variable-energy positron beams showed the formation of vacancy-type defects in 3C-SiC by the electron-irradiation. An ESR spectrum labeled Tl, which has an isotropic g-value of 2.0029 ± 0.001, was observed in electron-irradiated 3C-SiC. The Tl spectrum is interpreted by hyperfine interactions of paramagnetic electrons with 13 C at four carbon sites and 29 Si at twelve silicon sites, indicating that the Tl center arises from a point defect at a silicon site. Both the results can be accounted for by the introduction of isolated Si vacancies by the irradiation. (author)

  6. Electron-irradiation-induced phase transformation in alumina

    International Nuclear Information System (INIS)

    Chen, C.L.; Arakawa, K.; Lee, J.-G.; Mori, H.

    2010-01-01

    In this study, electron-irradiation-induced phase transformations between alumina polymorphs were investigated by high-resolution transmission electron microscopy. It was found that the electron-irradiation-induced α → κ' phase transformation occurred in the alumina under 100 keV electron irradiation. It is likely that the knock-on collision between incident electrons and Al 3+ cations is responsible for the occurrence of electron-irradiation-induced phase transformation from α-alumina to κ'-alumina.

  7. Defect studies in electron-irradiated ZnO and GaN

    International Nuclear Information System (INIS)

    Tuomisto, F.; Look, D.C.; Farlow, G.C.

    2007-01-01

    We present experimental results obtained with positron annihilation spectroscopy in room-temperature electron-irradiated n-type ZnO and GaN. The cation vacancies act as important compensating centers in 2 MeV electron-irradiated samples, even though their introduction rates are different by 2 orders of magnitude. In addition, negatively charged non-open volume defects that also compensate the n-type conductivity are produced together with the cation vacancies at similar introduction rates. The low introduction rates of compensating defects in ZnO demonstrate the radiation hardness of the material. Isochronal thermal annealings were performed to study the dynamics of the irradiation-induced defects. In 2 MeV electron-irradiated ZnO, all the defects introduced in the irradiation disappear already at 600 K, while 1100 K is needed in GaN. Several separate annealing stages of the defects are observed in both materials, the first at 400 K

  8. Defect studies in electron-irradiated ZnO and GaN

    Energy Technology Data Exchange (ETDEWEB)

    Tuomisto, F. [Laboratory of Physics, Helsinki University of Technology, 02015 TKK Espoo (Finland)], E-mail: filip.tuomisto@tkk.fi; Look, D.C. [Semiconductor Research Center, Wright State University, Dayton, OH 45435 (United States); Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, OH 45433 (United States); Farlow, G.C. [Physics Department, Wright State University, Dayton, OH 45435 (United States)

    2007-12-15

    We present experimental results obtained with positron annihilation spectroscopy in room-temperature electron-irradiated n-type ZnO and GaN. The cation vacancies act as important compensating centers in 2 MeV electron-irradiated samples, even though their introduction rates are different by 2 orders of magnitude. In addition, negatively charged non-open volume defects that also compensate the n-type conductivity are produced together with the cation vacancies at similar introduction rates. The low introduction rates of compensating defects in ZnO demonstrate the radiation hardness of the material. Isochronal thermal annealings were performed to study the dynamics of the irradiation-induced defects. In 2 MeV electron-irradiated ZnO, all the defects introduced in the irradiation disappear already at 600 K, while 1100 K is needed in GaN. Several separate annealing stages of the defects are observed in both materials, the first at 400 K.

  9. Wet chemical treatment of boron doped emitters on n-type (1 0 0) c-Si prior to amorphous silicon passivation

    Energy Technology Data Exchange (ETDEWEB)

    Meddeb, H., E-mail: hosny.meddeb@gmail.com [KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh (Saudi Arabia); IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Research and Technology Center of Energy, Photovoltaic Department, Borj-Cedria Science and Technology Park, BP 95, 2050 (Tunisia); University of Carthage, Faculty of Sciences of Bizerta (Tunisia); Bearda, T.; Recaman Payo, M.; Abdelwahab, I. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Abdulraheem, Y. [Electrical Engineering Department, College of Engineering & Petroleum, Kuwait University, P.O. Box 5969, 13060 Safat (Kuwait); Ezzaouia, H. [Research and Technology Center of Energy, Photovoltaic Department, Borj-Cedria Science and Technology Park, BP 95, 2050 (Tunisia); Gordon, I.; Szlufcik, J. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Poortmans, J. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Department of Electrical Engineering (ESAT), K.U. Leuven, 3001 Leuven (Belgium); Faculty of Sciences, University of Hasselt, Martelarenlaan 42, 3500 Hasselt (Belgium)

    2015-02-15

    Highlights: • The influence of the cleaning process using different HF-based cleaning on the amorphous silicon passivation of homojunction boron doped emitters is analyzed. • The effect of boron doping level on surface characteristics after wet chemical cleaning: For heavily doped surfaces, the reduction in contact angle was less pronounced, which proves that such surfaces are more resistant to oxide formation and remain hydrophobic for a longer time. In the case of low HF concentration, XPS measurements show higher oxygen concentrations for samples with higher doping level, probably due to the incomplete removal of the native oxide. • Higher effective lifetime is achieved at lower doping for all considered different chemical pre-treatments. • A post-deposition annealing improves the passivation level yielding emitter saturation currents determined by Auger recombination in the order of 70 fA/cm{sup 2} and below. • The dominance of Auger recombination over other type of B-induced defects on lifetime quality in the case of our p+ emitter. - Abstract: The influence of the cleaning process on the amorphous silicon passivation of homojunction emitters is investigated. A significant variation in the passivation quality following different cleaning sequences is not observed, even though differences in cleaning performance are evident. These results point out the effectiveness of our cleaning treatment and provide a hydrogen termination for intrinsic amorphous silicon passivation. A post-deposition treatment improves the passivation level yielding emitter saturation currents determined by Auger recombination in the order of 70 fA/cm{sup 2} and below.

  10. Study of the effect of neutron and electron irradiations on the low temperature thermal conductivity of germanium and silicon; Etude de l'effet des irradiations neutronique et electronique sur la conductibilite thermique aux basses temperatures du germanium et du silicium

    Energy Technology Data Exchange (ETDEWEB)

    Vandevyver, M [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1967-06-15

    The main results obtained from this work are the following: 1 Neutron irradiation (at 300 deg. K) produces lattice defects in germanium and silicon, and a corresponding very large lowering of the thermal conductivity is observed in the low temperature region (4-300 ). The results obtained have been explained with the help of the following hypotheses: for silicon a scattering of phonons by the stress fields produced by the defects; for germanium, a supplementary scattering of the electron phonon type. 2 Annealing treatments carried out on these materials above 373 deg. K restored the thermal conductivity over the whole temperature range of the measurements (4-300 deg. K); in the case of both germanium and silicon there were two steps in the annealing process. 3 A study of the thermal conductivity of germanium (initially P or N) after an electronic irradiation showed that the scattering of phonons could depend on the state of charge of the defects thus produced. (author) [French] Les principaux resultats obtenus au cours de ce travail sont les suivants : 1 Les irradiations neutroniques (a 300 deg. K) introduisent des defauts de reseau dans le germanium et le silicium et l'on observe correlativement pour ces materiaux, une tres importante diminution de conductibilite thermique dans le domaine des basses temperatures (4-300 deg. K). Les resultats obtenus ont pu etre interpretes en admettant principalement: pour le silicium, une diffusion des phonons par les champs de contrainte dus aux defauts; pour le germanium, une diffusion additionnelle du type electron-phonon. 2 Des recuits effectues sur ces materiaux au-dessus de 373 deg. K ont montre une restauration de la conductibilite thermique dans tout l'intervalle de temperature de mesure (4-300 deg. K) et comportant pour le germanium et le silicium, deux etapes de recuit 3 L'etude de la conductibilite thermique de germanium (initialement N ou P) apres une irradiation electronique, a montre que la diffusion des phonons

  11. Electron irradiation induced deep centers in hydrothermally grown ZnO

    International Nuclear Information System (INIS)

    Fang, Z.-Q.; Claflin, B.; Look, D. C.; Farlow, G. C.

    2007-01-01

    An n-type hydrothermally grown ZnO sample becomes semi-insulating (ρ∼10 8 Ω cm) after 1-MeV electron-irradiation. Deep traps produced by the irradiation were studied by thermally stimulated current spectroscopy. The dominant trap in the as-grown sample has an activation energy of 0.24 eV and is possibly related to Li Zn acceptors. However, the electron irradiation introduces a new trap with an activation energy of 0.15 eV, and other traps of energy 0.30 and 0.80 eV, respectively. From a comparison of these results with positron annihilation experiments and density functional theory, we conclude that the 0.15-eV trap may be related to V Zn

  12. Identification of defects in GaAs induced by 1 MeV electron irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Lai, S T; Nener, B D; Faraone, L; Nassibian, A G [Western Australia Univ., Nedlands, WA (Australia); Hotchkis, M A.C. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia)

    1994-12-31

    This paper shows that 1 MeV electron irradiation on n-type vapor phase epitaxial (VPE) GaAs creates three electron traps E1, E2 and EL6, and results in the splitting of the EL2 center into two levels EL2-A and EL2-B. A 15 minutes isochronal anneal results in the annihilation of the E1 and E2 traps, a reduction in EL6 trap concentration, and the return of EL2 to a single level EL2-A. A defect model is outlined which correlates with the observed results. 4 refs., 2 tabs., 3 figs.

  13. Identification of defects in GaAs induced by 1 MeV electron irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Lai, S.T.; Nener, B.D.; Faraone, L.; Nassibian, A.G. [Western Australia Univ., Nedlands, WA (Australia); Hotchkis, M.A.C. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia)

    1993-12-31

    This paper shows that 1 MeV electron irradiation on n-type vapor phase epitaxial (VPE) GaAs creates three electron traps E1, E2 and EL6, and results in the splitting of the EL2 center into two levels EL2-A and EL2-B. A 15 minutes isochronal anneal results in the annihilation of the E1 and E2 traps, a reduction in EL6 trap concentration, and the return of EL2 to a single level EL2-A. A defect model is outlined which correlates with the observed results. 4 refs., 2 tabs., 3 figs.

  14. Silicon passivation study under low energy electron irradiation conditions

    International Nuclear Information System (INIS)

    Cluzel, R.

    2010-01-01

    Backside illuminated thinned CMOS (Complementary Metal Oxide Semiconductor) imaging system is a technology developed to increase the signal to noise ratio and the sensibility of such sensors. This configuration is adapted to the electrons detection from the energy range of [1 - 12 keV]. The impinging electron creates by multiplication several hundreds of secondary electrons close to the surface. A P ++ highly-doped passivation layer of the rear face is required to reduce the secondary electron surface recombination rate. Thanks to the potential barrier induced by the P ++ layer, the passivation layer increases the collected charges number and so the sensor collection gain. The goal of this study is to develop some experimental methods in order to determine the effect of six different passivation processes on the collection gain. Beforehand, the energy profile deposited by an incident electron is studied with the combination of Monte-Carlo simulations and some analytical calculations. The final collection gain model shows that the mirror effect from the passivation layer is a key factor at high energies whereas the passivation layer has to be as thin as possible at low energies. A first experimental setup which consists in irradiating P ++ /N large diodes allows to study the passivation process impacts on the surface recombinations. Thanks to a second setup based on a single event upset directly on thinned CMOS sensor, passivation techniques are discriminated in term of mirror effect and the implied spreading charges. The doping atoms activation laser annealing is turn out to be a multiplication gain inhomogeneity source impacting directly the matrix uniformity. (author)

  15. Electron irradiation effects on lithium peroxide

    Science.gov (United States)

    Kikkawa, Jun; Shiotsuki, Taishi; Shimo, Yusuke; Koshiya, Shogo; Nagai, Takuro; Nito, Takehiro; Kimoto, Koji

    2018-03-01

    In this study, electron irradiation effects on lithium peroxide (Li2O2), which is an important discharge product of Li-air (or Li-O2) batteries, were investigated using selected-area electron diffraction (SAED) and high-energy resolution electron energy-loss spectroscopy (EELS). The results obtained show that Li2O2 to Li2O transformation occurs with 80 and 300 keV incident electrons under high electron dose rates at 20 and -183 °C. The Li2O2 to Li2O transformation rate for 300 keV was 1/5 of that for 80 keV with the irradiation taking place at -183 °C. We also present a series of the EELS spectra that can be used as a criterion to judge the molar ratio of Li2O to Li2O2 in the general systems where Li2O2 and Li2O coexist.

  16. Electron irradiation of dry food products

    International Nuclear Information System (INIS)

    Gruenewald, Th.

    1983-01-01

    The interest of the industrial food producer is increasing in having the irradiation facility installed in the food processing chain. The throughput of the irradiator should be high and the residence time of the product in the facility should be short. These conditions can be accomplished by electron irradiators. To clarify the irradiation conditions spices taken out of the industrial process, food grade salt, sugar, and gums as models of dry food products were irradiated. With a radiation dose of 10 kGy microbial load can be reduced on 10**4 microorganisms/g. The sensory properties of the spices were not changed in an atypical way. For food grade salt and sugar changes of colour were observed which are due to lattice defects or initiated browning. The irradiation of several gums led only in some cases to an improvement of the thickness properties in the application below 50 deg C, in most cases the thickness effect was reduced. The products were packaged before irradiation. But it would be possible also to irradiate the products without packaging moving the product through the irradiation field in a closed conveyor system. (author)

  17. Thermal conductivity of electron-irradiated graphene

    Science.gov (United States)

    Weerasinghe, Asanka; Ramasubramaniam, Ashwin; Maroudas, Dimitrios

    2017-10-01

    We report results of a systematic analysis of thermal transport in electron-irradiated, including irradiation-induced amorphous, graphene sheets based on nonequilibrium molecular-dynamics simulations. We focus on the dependence of the thermal conductivity, k, of the irradiated graphene sheets on the inserted irradiation defect density, c, as well as the extent of defect passivation with hydrogen atoms. While the thermal conductivity of irradiated graphene decreases precipitously from that of pristine graphene, k0, upon introducing a low vacancy concentration, c reduction of the thermal conductivity with the increasing vacancy concentration exhibits a weaker dependence on c until the amorphization threshold. Beyond the onset of amorphization, the dependence of thermal conductivity on the vacancy concentration becomes significantly weaker, and k practically reaches a plateau value. Throughout the range of c and at all hydrogenation levels examined, the correlation k = k0(1 + αc)-1 gives an excellent description of the simulation results. The value of the coefficient α captures the overall strength of the numerous phonon scattering centers in the irradiated graphene sheets, which include monovacancies, vacancy clusters, carbon ring reconstructions, disorder, and a rough nonplanar sheet morphology. Hydrogen passivation increases the value of α, but the effect becomes very minor beyond the amorphization threshold.

  18. Electron irradiation of dry food products

    Energy Technology Data Exchange (ETDEWEB)

    Gruenewald, Th [Bundesbahn-Zentralamt, Minden (Germany, F.R.)

    1983-01-01

    The interest of the industrial food producer is increasing in having the irradiation facility installed in the food processing chain. The throughput of the irradiator should be high and the residence time of the product in the facility should be short. These conditions can be accomplished by electron irradiators. To clarify the irradiation conditions spices taken out of the industrial process, food grade salt, sugar, and gums as models of dry food products were irradiated. With a radiation dose of 10 kGy microbial load can be reduced on 10**4 microorganisms/g. The sensory properties of the spices were not changed in an atypical way. For food grade salt and sugar changes of colour were observed which are due to lattice defects or initiated browning. The irradiation of several gums led only in some cases to an improvement of the thickness properties in the application below 50 deg C, in most cases the thickness effect was reduced. The products were packaged before irradiation. But it would be possible also to irradiate the products without packaging moving the product through the irradiation field in a closed conveyor system.

  19. Positron lifetime studies of electron irradiated copper

    International Nuclear Information System (INIS)

    Hadnagy, T.D.

    1976-01-01

    Single-crystal copper was irradiated with 4.5-MeV electrons producing simple Frenkel defects as well as a significant concentration of divacancies. Mean positron lifetime characteristics, which are sensitive to the presence of vacancies and multivacancies in copper, was monitored after isochronal anneals between 80 and 800 0 K to determine the relative change of characteristic mean lifetimes and their associated intensities. Also a study of the dependence of the mean positron lifetime on the total electron fluence was made and compared with existing theories relating these lifetimes to vacancy or multivacancy concentrations. Numerical data from curve fitting procedures using a conventional trapping model for defect-induced changes in positron lifetimes indicate that upon irradiation with 4.5-MeV electrons at 80 0 K, about 8 percent of the defects produced are divacancy units. Divacancy units appear to be several times more effective in trapping positrons than are monovacancies. Further, the experimental data suggest that the stage III annealing processes in electron-irradiated copper most probably involve the motion and removal of both monovacancies and divacancies. A conglomerate (multivacancy) unit appears to exist as a stable entity even after annealing procedures are carried out at temperatures slightly above the stage III region. Such a stable unit could serve as a nucleation center for the appearance of voids

  20. Using electron irradiation to probe iron-based superconductors

    Science.gov (United States)

    Cho, Kyuil; Kończykowski, M.; Teknowijoyo, S.; Tanatar, M. A.; Prozorov, R.

    2018-06-01

    High-energy electron irradiation at low temperatures is an efficient and controlled way to create vacancy–interstitial Frenkel pairs in a crystal lattice, thereby inducing nonmagnetic point-like scattering centers. In combination with London penetration depth and resistivity measurements, the electron irradiation was used as a phase-sensitive probe to study the superconducting order parameter in iron-based superconductors (FeSCs), lending strong support to sign-changing s ± pairing. Here, we review the key results of the effect of electron irradiation in FeSCs.

  1. Changing in tool steels wear resistance under electron irradiation

    International Nuclear Information System (INIS)

    Braginskaya, A.E.; Manin, V.N.; Makedonskij, A.V.; Mel'nikova, N.A.; Pakchanin, L.M.; Petrenko, P.V.

    1983-01-01

    The tool steels and alloys wear resistance under dry friction after electron irradiation has been studied. Electron irradiation of a wide variety of steels is shown to increase wear resistance. In this case phase composition and lattice parameters changes are observed both in matrix and carbides. The conclusion is drawn that an appreciable increase of steel wear resistance under electron irradiation can be explained both by carbide phase volume gain and changes in it's composition and the formation of carbide phase submicroscopic heterogeneities and, possibly, complexes of defects

  2. Simulation model for electron irradiated IGZO thin film transistors

    Science.gov (United States)

    Dayananda, G. K.; Shantharama Rai, C.; Jayarama, A.; Kim, Hyun Jae

    2018-02-01

    An efficient drain current simulation model for the electron irradiation effect on the electrical parameters of amorphous In-Ga-Zn-O (IGZO) thin-film transistors is developed. The model is developed based on the specifications such as gate capacitance, channel length, channel width, flat band voltage etc. Electrical parameters of un-irradiated IGZO samples were simulated and compared with the experimental parameters and 1 kGy electron irradiated parameters. The effect of electron irradiation on the IGZO sample was analysed by developing a mathematical model.

  3. Dielectric properties during electron irradiation of alternative materials for gyrotron windows

    International Nuclear Information System (INIS)

    Vila, R.; Ibarra, A.; Hodgson, E.R.

    1996-01-01

    Recent work on high power gyrotron windows has focused interest on some homopolar insulators as alternatives to sapphire due to their combined low dielectric loss and high thermal conductivity. The two main candidates at this moment, CVD diamond and high resistivity silicon, have been studied. As an indicator of their radiation behaviour, loss tangent and permittivity at about 15 GHz have been measured under 1.8 MeV electron irradiation at RT. In the case of silicon the previously observed radiation-induced decrease of loss tangent has been confirmed reaching a lower saturation level of 3.5 x 10 -5 at higher doses, and falling with increasing frequency. An even more important observation is that the sensitivity to ionizing radiation dropped by 4 orders of magnitude due to the radiation dose. First results for diamond are also promising, only a small degradation at relatively short times being seen with no further changes up to the maximum dose used. (orig.)

  4. Recovery of electron irradiated V-Ga alloys

    International Nuclear Information System (INIS)

    Leguey, T.; Monge, M.; Pareja, R.; Hodgson, E.R.

    2000-01-01

    The recovery characteristics of electron-irradiated V-Ga alloys with 1.2 and 4.6 at.% Ga have been investigated by positron annihilation spectroscopy (PAS). It is found that vacancies created by electron irradiation become mobile in these alloys at ∼293 K. This temperature is noticeably lower than that in pure V and V-Ti alloys. The vacancies aggregate into microvoids in V-4.6Ga, but do not in V-1.2Ga. The results indicate that vacancies are bound to Ga-interstitial impurity pairs

  5. Effects of electron-irradiation on electrical properties of AgCa/Si Schottky diodes

    International Nuclear Information System (INIS)

    Harmatha, L.; Zizka, M.; Sagatova, A.; Nemec, M.; Hybler, P.

    2013-01-01

    This contribution presents the results of the current-voltage I-V and the capacitance-voltage C-V measurement on the Schottky diodes with the AgCa gate on the silicon n-type substrate. The Si substrate was irradiated by 5 MeV electrons with a different dose value before the Schottky diode preparation. (authors)

  6. Electron microscopy of boron carbide before and after electron irradiation

    International Nuclear Information System (INIS)

    Stoto, T.; Zuppiroli, L.; Beauvy, M.; Athanassiadis, T.

    1984-06-01

    The microstructure of boron carbide has been studied by electron microscopy and related to the composition of the material. After electron irradiations in an usual transmission electron microscope and in a high voltage electron microscope at different temperatures and fluxes no change of these microstructures have been observed but a sputtering of the surface of the samples, which has been studied quantitatively [fr

  7. The electron irradiation effects in different structures of diodes

    International Nuclear Information System (INIS)

    Li Quanfen; Wang Jiaxu

    1993-01-01

    This paper describes the different electron irradiation effects in different structures of diodes and the different results produced by different irradiation ways. From this work, we can know how to choose proper manufacture arts and comprehensive factors according to the structures of diodes and the irradiation conditions

  8. Radiation defects in electron-irradiated InP crystals

    International Nuclear Information System (INIS)

    Brailovskii, E.Yu.; Karapetyan, F.K.; Megela, I.G.; Tartachnik, V.P.

    1982-01-01

    The results are presented of formation and annealing of defects in InP crystals at 1 to 50 MeV electron irradiation. The recovery of electrical properties in the range of 77 to 970 K during annealing processes is studied. Five low temperature annealing states in n-InP and the reverse annealing in p-InP are observed at 77 to 300 K. Four annealing stages at temperatures higher than 300 K are present. When the electron energy is increased more complicated thermostable defects are formed, and at 50 MeV electron energy besides of the point defect clusters are formed, which anneal at temperatures of 800 to 970 K. It is shown that the peculiarities of the Hall mobility at irradiation and annealing are caused by the scattering centres E/sub c/ - 0.2 eV. The 'limiting' position of the Fermi level in electron irradiated InP crystals is discussed. (author)

  9. Positron lifetime measurements on electron irradiated amorphous alloys

    International Nuclear Information System (INIS)

    Moser, P.; Hautojaervi, P.; Chamberod, A.; Yli-Kauppila, J.; Van Zurk, R.

    1981-08-01

    Great advance in understanding the nature of point defects in crystalline metals has been achieved by employing positron annihilation technique. Positrons detect vacancy-type defects and the lifetime value of trapped positrons gives information on the size of submicroscopic vacancy aglomerates and microvoids. In this paper it is shown that low-temperature electron irradiations can result in a considerable increase in the positron lifetimes in various amorphous alloys because of the formation of vacancy-like defects which, in addition of the pre-existing holes, are able to trap positrons. Studied amorphous alloys were Fe 80 B 20 , Pd 80 Si 20 , Cu 50 Ti 50 , and Fe 40 Ni 40 P 14 B 6 . Electron irradiations were performed with 3 MeV electrons at 20 K to doses around 10 19 e - /cm 2 . After annealing positron lifetime spectra were measured at 77 K

  10. Electron irradiation-induced defects in {beta}-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Oshima, Ryuichiro [Osaka Prefectural Univ., Sakai (Japan). Reseach Inst. for Advanced Science and Technology

    1996-04-01

    To add information of point defects in cubic crystal SiC, polycrystal {beta}-SiC on the market was used as sample and irradiated by neutron and electron. In situ observation of neutron and electron irradiation-induced defects in {beta}-SiC were carried out by ultra high-voltage electronic microscope (UHVEM) and ordinary electronic microscope. The obtained results show that the electron irradiation-induced secondary defects are micro defects less than 20 nm at about 1273K, the density of defects is from 2x10{sup 17} to 1x10{sup 18}/cc, the secondary defects may be hole type at high temperature and the preexistant defects control nuclear formation of irradiation-induced defects, effective sink. (S.Y.)

  11. Bulk and interface defects in electron irradiated InP

    International Nuclear Information System (INIS)

    Peng Chen; Sun Heng-hui

    1989-01-01

    Systematic studies on the structure of defects in InP caused by electron irradiation are conducted based on experimental measurements and theoretical calculations. The rates of introduction and annealing-out temperatures of In and P vancancies are estimated using proper theoretical models. These calculations reveal that after room temperature irradiation only complexes may exist. It is also supported by our experimental data that the sum of introducing rates of three detected levels are less than the theoretical value calculated for single vacancies. According to our equation on the relation between interface states and DLTS signal and from the results of computer calculation we believe that the broad peak appearing in the DLTS diagram before irradiation is related to interface states. Its disappearance after electron irradiation suggests the reduction of interface states; this is further confirmed by the reduction of surface recombination rate derived from the results of surface photovoltage measurement

  12. (100) faceted anion voids in electron irradiated fluorite

    International Nuclear Information System (INIS)

    Johnson, E.

    1979-01-01

    High fluence electron irradiation of fluorite crystals in the temperature range 150 to 320 K results in formation of a simple cubic anion void superlattice. Above 320 K the damage structure changes to a random distribution of large [001] faceted anion voids. This voidage behaviour, similar to that observed in a range of irradiated metals, is discussed in terms points defect rather than conventional colour centre terminology. (Auth.)

  13. Evolution of graphene nanoribbons under low-voltage electron irradiation

    KAUST Repository

    Zhu, Wenpeng

    2012-01-01

    Though the all-semiconducting nature of ultrathin graphene nanoribbons (GNRs) has been demonstrated in field-effect transistors operated at room temperature with ∼105 on-off current ratios, the borderline for the potential of GNRs is still untouched. There remains a great challenge in fabricating even thinner GNRs with precise width, known edge configurations and specified crystallographic orientations. Unparalleled to other methods, low-voltage electron irradiation leads to a continuous reduction in width to a sub-nanometer range until the occurrence of structural instability. The underlying mechanisms have been investigated by the molecular dynamics method herein, combined with in situ aberration-corrected transmission electron microscopy and density functional theory calculations. The structural evolution reveals that the zigzag edges are dynamically more stable than the chiral ones. Preferential bond breaking induces atomic rings and dangling bonds as the initial defects. The defects grow, combine and reconstruct to complex edge structures. Dynamic recovery is enhanced by thermal activation, especially in cooperation with electron irradiation. Roughness develops under irradiation and reaches a plateau less than 1 nm for all edge configurations after longtime exposure. These features render low-voltage electron irradiation an attractive technique in the fabrication of ultrathin GNRs for exploring the ultimate electronic properties. © 2012 The Royal Society of Chemistry.

  14. Elemental process of amorphization induced by electron irradiation in Si

    International Nuclear Information System (INIS)

    Yamasaki, Jun; Takeda, Seiji; Tsuda, Kenji

    2002-01-01

    We recently found that amorphization is induced in Si by electron irradiation. Examining the amorphization systematically, we have established the diagram of steady states under electron irradiation, either amorphous Si (a-Si) or crystalline Si (c-Si) as a function of incident electron energy, electron dose, and irradiation temperature. Utilizing transmission electron microscopy, electron energy filtered diffraction and electron energy-loss spectroscopy, we have characterized the atomic structure, the electronic structure, and the thermal stability of a-Si induced by electron irradiation. Based on the experimental data, we have also concluded that the amorphization is caused by the accumulation of not point defects but small cascade damages. Analyzing the change in the intensity of halo diffraction rings during amorphization, we have clarified that the smallest cascade damage that contributes to amorphization includes only about four Si atoms. This presumably supports the amorphization mechanism that four self-interstitial atoms form the quasistable structure I4 in c-Si and it becomes an amorphous embryo

  15. Effects of electron irradiation on LDPE/MWCNT composites

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Jianqun [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Li, Xingji, E-mail: lxj0218@hit.edu.cn [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Liu, Chaoming; Rui, Erming [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Wang, Liqin [School of Mechatronics, Harbin Institute of Technology, Harbin 150001 (China)

    2015-12-15

    In this study, mutiwalled carbon nanotubes (MWCNTs) were incorporated into low density polyethylene (LDPE) in different concentrations (2%, 4% and 8%) using a melt blending process. Structural, thermal stability and tensile property of the unirradiated/irradiated LDPE/MWCNT composites by 110 keV electrons were investigated by means of scanning electron microscopy (SEM), small angle X-ray scattering (SAXS), Raman spectroscopy, electron paramagnetic resonance (EPR) spectroscopy, thermogravimetric analysis (TGA) and uniaxial tensile techniques. Experimental results show that the addition of MWCNTs obviously increases the ultimate tensile strength of LDPE and decreases the elongation at break, which is attributed to the homogeneous distribution of the MWCNTs in LDPE and intense interaction between MWCNTs and LDPE matrix. Also, the electron irradiation further increases the ultimate tensile strength of LDPE/MWCNT composites, which can be ascribed to the more intense interaction between MWCNTs and LDPE matrix, and the formation of crosslinking sites in LDPE matrix induced by the electron irradiation. The addition of MWCNTs significantly enhances thermal stability of the LDPE due to the hindering effect and the scavenging free radicals, while the electron irradiation decreases thermal stability of the LDPE/MWCNT composites since the structure of the MWCNTs and LDPE matrix damages.

  16. Electron irradiation effect on single crystal of niobium

    International Nuclear Information System (INIS)

    Otero, M.P.; Lucki, G.

    1984-01-01

    The effect of electron irradiation (900 KeV) on gliding dislocations of single crystal Nb with its tensile axe in the [941] orientation was observed for the in-situ deformation in a high voltage electron microscope (HVEM) at Argonne National Laboratory. The experimental was carried out by the 1 hour-electron irradiation with no stress applied. Straight dislocations actuating as sinks for the electron produced defects became helicoidal as the irradiation proceeded. Frenkel pairs were created in Nb for electron energies > = 650 KeV and, as the single vacancies do not undergo long-range migration in Nb at temperatures much below 620 K, the defects that are entrapped by the dislocations are self-interstitials produced by electron displacement. Applying the stress it was possible to observe that modified dislocations did not glide while the dislocations not affected by the irradiation are visibly in movement. This important result explains the neutron and electron-irradiation induced work-hardening effect for Nb that was previously observed. (Author) [pt

  17. Segregation of a copper-nickel alloy after electron irradiation

    International Nuclear Information System (INIS)

    Wagner, W.

    1979-09-01

    In the present work measurement of diffuse neutron scattering are used to determine short range segregation effects of the alloy Cu 0 sub(.) 414 Ni 0 sub(.) 586 after thermal annealing and 3 MeV electron irradiation in the temperature range between 370 K and 600 K. In addition neutron small angle scattering measurement are performed after irradiation to study possible long range segregation effects. Residual resistivity measurements are performed in parallel in order tp orientate the relatively expensive neutron scattering measurements with respect to the residual changes (orig./KBI) [de

  18. Thermoluminescence in KBr:D electron irradiated at room temperature

    International Nuclear Information System (INIS)

    Paredes Campoy, J.C.; Lopez Carranza, E.

    1991-07-01

    The thermoluminescence of KBr:D samples electron irradiated at room temperature after thermal annealing at 673 K for 1 hour have been studied in the temperature range 360-730 K. The experimental TL-curve was discomposed by computer analysis in seven overlapping TL peaks, giving for them the order of the kinetics of thermal stimulation, the activation energy, the frequency factor, the relative values of the electronic concentration in traps at the initial heating temperature and the temperature at the maximum of the peak. (author). 18 refs, 1 fig., 3 tabs

  19. Amorphization kinetics of Zr3Fe under electron irradiation

    International Nuclear Information System (INIS)

    Motta, A.T.; Howe, L.M.; Okamoto, P.R.

    1994-11-01

    Previous investigations using 40 Ar ion bombardments have revealed that Zr 3 Fe, which has an orthorhombic crystal structure, undergoes an irradiation-induced transformation from the crystalline to the amorphous state. In the present investigation, 0.9 MeV electron irradiations were performed at 28 - 220 K in a high-voltage electron microscope (HVEM). By measuring the onset, spread and final size of the amorphous region, factoring in the Gaussian distribution of the beam, a kinetic description of the amorphization in terms of dose, dose rate and temperature was obtained. The critical temperature for amorphization by electron irradiation was found to be ∼ 220 K, compared with 570 - 625 K for 40 Ar ion irradiation. Also, the dose-to-amorphization increased exponentially with temperature. Results indicated that the rate of growth of the amorphous region under the electron beam decreased with increasing temperature and the dose-to-amorphization decreased with increasing dose rate. The size of the amorphous region saturated after a given dose, the final size decreasing with increasing temperature, and it is argued that this is related to the existence of a critical dose rate, which increases with temperature, and below which no amorphization occurs. (author). 26 refs., 6 figs

  20. Amorphization kinetics of Zr3Fe under electron irradiation

    International Nuclear Information System (INIS)

    Motta, A.T.; Howe, L.M.; Okamoto, P.R.

    1992-10-01

    0.9 MeV electron irradiations were performed at 28--220 K in a high-voltage electron microscope (HVEM). By measuring onset, spread and final size of the amorphous region, factoring in the Guassian distribution of the beam, a kinetic description of the amorphization in terms of dose, dose rate and temperature was obtained. The critical temperature for amorphization by electron irradiation was found to be ∼220 K, compared to 570--625 K for 40 Ar ion irradiation. Also, the dose-to-amorphization increased exponentially with temperature. Results indicated that the rate of growth of the amorphous region under the electron beam decreased with increasing temperature and the does-to-amorphization decreased with increasing dose rate. The size of the amorphous region saturated after a region dose, the final size decreasing with increasing temperature, and it was argued that this is related to the existence of a critical dose rate, which increased with temperature, below which no amorphization occurred. The above observations can be understood in the framework of the kinetics of damage accumulation under irradiation

  1. Strengthening of Poly Methyl Methacrylate (PMMA) through Electron Irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Yoo, Sung Ho; Lim, Hyung San; Ha, Jun Mok; Cho, Sung Oh [KAIST, Daejeon (Korea, Republic of)

    2015-05-15

    Poly Methyl Methacrylate (PMMA) was previously known to show the deteriorating mechanical properties when irradiated with electrons. This is true for low electron irradiation does, but it was found, through experimentation, that at high irradiation dose, PMMA demonstrates improved mechanical properties. With enough electron irradiation dose, the scissions can form new links amongst one another to achieve stability that surpasses that of the PMMA in pre-irradiation treatment state. With higher irradiation dosage and beam strength, hardness of irradiated PMMA could be increased to a much greater extent. Electrons with 50keV of energy can only penetrate around 30 μm of PMMA, thus increasing the beam energy could potentially allow for hardening of not just the surface of the PMMA samples, but the whole samples themselves. Furthermore, Pencil Hardness Test is a method to roughly analyze a material's hardness and does not provide an accurate feedback on the mechanical properties of the material of interest. Hence, a more thorough and effective method of measuring data from the use of equipment such as IZOD Impact Tester, Strain-Stress Tester and Haze Meter will be utilized in the future.

  2. Silver nanoparticles: synthesis and size control by electron irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Bogle, K A; Dhole, S D; Bhoraskar, V N [Microtron Accelerator Laboratory, Department of Physics, University of Pune, Pune-411007 (India)

    2006-07-14

    Silver nanoparticles were synthesized by irradiating solutions, prepared by mixing AgNO{sub 3} and poly-vinyl alcohol (PVA), with 6 MeV electrons. The electron-irradiated solutions and the thin coatings cast from them were characterized using the ultraviolet-visible (UV-vis), x-ray diffraction (XRD), transmission electron microscopy (TEM) and scanning electron microscopy (SEM) techniques. During electron irradiation, the process of formation of the silver nanoparticles appeared to be initiated at an electron fluence of {approx}2 x 10{sup 13} e cm{sup -2}. This was evidenced from the solution, which turned yellow and exhibited the characteristic plasmon absorption peak around 455 nm. Silver nanoparticles of different sizes in the range 60-10 nm, with a narrow size distribution, could be synthesized by varying the electron fluence from 2 x 10{sup 13} to 3 x 10{sup 15} e cm{sup -2}. Silver nanoparticles of sizes in the range 100-200 nm were also synthesized by irradiating an aqueous AgNO{sub 3} solution with 6 MeV electrons.

  3. Comparison of initial damage rates using neutron and electron irradiations

    International Nuclear Information System (INIS)

    Goldstone, J.A.R.

    1978-08-01

    The purpose of this experiment was twofold: (1) The number of interstitials that pin dislocations was studied as a function of neutron energy. (2) By comparison with electron irradiations on the sample, a correlation between the predicted and measured numbers of defects was found. All irradiations were performed on the same high purity copper sample. The sample was machined in the form of a cantilever beam with a flexural resonant frequency of 770 Hz. Changes in Young's modulus at constant strain amplitude were monitored continuously through changes in the resonant frequency of the sample. These changes in the modulus can be related to the number of pinning points added to dislocation lines, which are in turn related to the number of free interstitials produced. Neutron energy dependence experiments were done from 2 to 24 MeV on the copper sample and at 14 MeV on a gold sample. By equating pinning rates from electron and neutron irradiations and using the free interstitial production rate obtained from electron irradiations, an estimate of the free interstitial production cross section for neutrons of 2 to 24 MeV was made

  4. Radiation defects in electron-irradiated InP crystals

    Energy Technology Data Exchange (ETDEWEB)

    Brailovskii, E.Yu.; Karapetyan, F.K.; Megela, I.G.; Tartachnik, V.P. (AN Ukrainskoj SSR, Kiev. Inst. Yadernykh Issledovanij)

    1982-06-16

    The results are presented of formation and annealing of defects in InP crystals at 1 to 50 MeV electron irradiation. The recovery of electrical properties in the range of 77 to 970 K during annealing processes is studied. Five low temperature annealing states in n-InP and the reverse annealing in p-InP are observed at 77 to 300 K. Four annealing stages at temperatures higher than 300 K are present. When the electron energy is increased more complicated thermostable defects are formed, and at 50 MeV electron energy besides of the point defect clusters are formed, which anneal at temperatures of 800 to 970 K. It is shown that the peculiarities of the Hall mobility at irradiation and annealing are caused by the scattering centres E/sub c/ - 0.2 eV. The 'limiting' position of the Fermi level in electron irradiated InP crystals is discussed.

  5. Positron annihilation in hydrogenated and electron-irradiated titanium alloys

    International Nuclear Information System (INIS)

    Mukashev, K.M.; Zaikin, Yu.A.

    2002-01-01

    Important information on hydrogen behavior in titanium can be obtained from studies of radiation damage in previously hydrogenated metal. For this purpose annealed titanium samples were hydrogenated at the temperature 500 deg. C during 1 hour. Then both the original annealed samples and hydrogenated samples were irradiated by 4 MeV electrons in the fluence range 3·10 7 -1·10 19 cm - 2 at the temperature 60 deg. C. It is known that electron irradiation in these conditions predominantly creates vacancy-type defects with an average radius R ν =0.81 Angstrom. It was stated that annihilation probability after electron irradiation of previously hydrogenated titanium samples always has some intermediate values between those characteristic for hydrogenated and irradiated states of previously annealed metal. This is a reason to suppose that radiation defects of the vacancy type in previously hydrogenated titanium combine with hydrogen atoms in favorable conditions of their partial ionization. The estimated value of the average radius for such a complex is R ν =1.1 Angstrom, that is higher than vacancy size but lower than an atom radius. No dose dependence of hydrogen interaction with radiation defects was observed in our experiments.The results of isochrone annealing of the materials under study have shown that the single annealing recovery stage with activation energy E a equal to 1.22 eV is observed in electron irradiated but not previously hydrogenated titanium in the temperature range 170-240 deg. C. Electron irradiation of the previously hydrogenated metal shifts beginning of the first recovery stage to the temperature about 225-230 deg. C and finishes near the temperature 330 deg. C. Therefore, the bound state vacancy-hydrogen in titanium is characterized by higher temperature range of dissociation and annealing with activation energy equal to 1.38 eV. However, subsequent measurements, of the angular distribution of annihilation photons (ADAP) have demonstrated

  6. Interpretation of recovery stage III in gold. [Electron irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Seeger, A.; Frank, W. (Max-Planck-Institut fuer Metallforschung, Stuttgart (Germany, F.R.). Inst. fuer Physik; Stuttgart Univ. (Germany, F.R.). Inst. fuer Theoretische und Angewandte Physik)

    1983-05-01

    The paper compares a recent investigation of Stage-III recovery on electron-irradiated gold by Sonnenberg and Dedek with earlier work on cold-worked or quenched gold. The experimental results of Sonnenberg and Dedek are found to be in excellent agreement with those of Schuele, Seeger, Schumacher, and King, who showed that in Au Stage III is due to the migration of an elementary intrinsic point defect with migration enthalpy Hsup(III) = (0.71 +- 0.02)eV. Since the monovacancy migration enthalpy Hsub(IVsup(M)) = (0.83 +- 0.02)eV obtained by Schuele et al. has been confirmed by other workers and independent techniques, it is concluded that Hsup(III) represents the migration enthalpy of isolated self-interstitials.

  7. Application of electron irradiation to food containers and packaging materials

    International Nuclear Information System (INIS)

    Ueno, Koji

    2010-01-01

    Problems caused by microbial contamination and hazardous chemicals have attracted much attention in the food industry. The number of systems such as hygienic management systems and Hazard Analysis Critical Control Point (HACCP) systems adopted in the manufacturing process is increasing. As manufacturing process control has become stricter, stricter control is also required for microbial control for containers and packaging materials (from disinfection to sterilization). Since safe and reliable methods for sterilizing food containers and packaging materials that leave no residue are required, electron beam sterilization used for medical equipment has attracted attention from the food industry. This paper describes an electron irradiation facility, methods for applying electron beams to food containers and packaging materials, and products irradiated with electron beams. (author)

  8. Electron irradiation induced nanocrystal formation in Cu-borosilicate glass

    Energy Technology Data Exchange (ETDEWEB)

    Sabri, Mohammed Mohammed; Möbus, Günter, E-mail: g.moebus@sheffield.ac.uk [University of Sheffield, Department of Materials Science and Engineering (United Kingdom)

    2016-03-15

    Nanoscale writing of Cu nanoparticles in glasses is introduced using focused electron irradiation by transmission electron microscopy. Two types of copper borosilicate glasses, one with high and another with low Cu loading, have been tested at energies of 200–300 keV, and formation of Cu nanoparticles in a variety of shapes and sizes using different irradiation conditions is achieved. Electron energy loss spectroscopy analysis, combined with high-resolution transmission electron microscopy imaging, confirmed the irradiation-induced precipitated nanoparticles as metallic, while furnace annealing of the glass triggered dendrite-shaped particles of copper oxide. Unusual patterns of nanoparticle rings and chains under focused electron beam irradiation are also presented. Conclusively, electron beam patterning of Cu-loaded glasses is a promising alternative route to well-established femtosecond laser photoreduction of Cu ions in glass.

  9. Precipitate resolution in an electron irradiated ni-si alloy

    Science.gov (United States)

    Watanabe, H.; Muroga, T.; Yoshida, N.; Kitajima, K.

    1988-09-01

    Precipitate resolution processes in a Ni-12.6 at% Si alloy under electron irradiation have been observed by means of HVEM. Above 400°C, growth and resolution of Ni 3Si precipitates were observed simultaneously. The detail stereoscopic observation showed that the precipitates close to free surfaces grew, while those in the middle of a specimen dissolved. The critical dose when the precipitates start to shrink increases with increasing the depth. This depth dependence of the precipitate behavior under irradiation has a close relation with the formation of surface precipitates and the growth of solute depleted zone beneath them. The temperature and dose dependence of the resolution rate showed that the precipitates in the solute depleted zone dissolved by the interface controlled process of radiation-enhanced diffusion.

  10. Challenges in validating radiation sterilization with low energy electron irradiation

    International Nuclear Information System (INIS)

    Miller, A.; Helt-Hansen, J.

    2011-01-01

    Complete text of publication follows. Low energy electron irradiation (80-300 keV) is used increasingly for sterilization or decontamination in connection with isolators for aseptic filling lines in the pharmaceutical industry. It is not defined how validation for this process shall be carried out. A method can be derived from the medical device standard for radiation sterilization, ISO 11137, because the principles described in this standard can be applied to almost any industrial irradiation process. The validations elements are: Process definition, concerning specification of the dose required for the process and the maximum acceptable dose for the product. Installation qualification, concerning acceptance the irradiation facility. Operational qualification, concerning characterization of the facility. Performance qualification, concerning setting up the process. Process control, concerning routine monitoring. The limited penetration of the low energy electrons leads to problems with respect to executing these validation steps. This paper discusses these problems, and shows with examples how they can be solved.

  11. Tailoring crystallinity and configuration of silica nanotubes by electron irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Taguchi, Tomitsugu, E-mail: taguchi.tomitsugu@jaea.go.jp; Yamaguchi, Kenji

    2015-05-01

    Highlights: •Single-crystal SiO{sub 2} nanotubes were successfully synthesized for the first time. •The single-crystal SiO{sub 2} was α-crystobalite. •Desired area of single-crystal nanotube can be changed to amorphous by electron irradiation. •The configuration of nanotube can be controlled using the focused electron irradiation technique. -- Abstract: SiO{sub 2} nanotubes show potential in applications such as nanoscale electronic and optical devices, bioseparation, biocatalysis, and nanomedicine. As-grown SiO{sub 2} nanotubes in the previous studies always have an amorphous wall, and here we demonstrate the successful synthesis of single-crystal nanotubes for the first time by the heat treatment of SiC nanotubes at 1300 °C for 10 h under low-vacuum conditions. According to TEM observations, the single-crystal SiO{sub 2} was α-cristobalite. We also demonstrate that single-crystal SiO{sub 2} nanotubes can be transformed into amorphous SiO{sub 2} nanotubes by electron beam irradiation. Moreover, we synthesized a crystalline/amorphous SiO{sub 2} composite nanotube, in which crystalline and amorphous SiO{sub 2} coexisted in different localized regions. In addition, for biomedical applications such as drug delivery systems, controlling the configuration of the open end, the diameter, and capsulation of SiO{sub 2} nanotubes is crucial. We can also obturate, capsulate, and cut a SiO{sub 2} nanotube, as well as modify the inner diameter of the nanotube at a specific, nanometer-sized region using the focused electron beam irradiation technique.

  12. Infrared characterization of some oxygen-related defects in Czochralski silicon

    International Nuclear Information System (INIS)

    Hallberg, T.

    1993-01-01

    This thesis is based on the work made at Linkoeping University at the Department of Physics and Measurement Technology. It is divided into two parts. The first part is a short introduction to defects in silicon, Fourier transform infrared spectroscopy as well as some physics involved in semiconductor crystals. The second part consists of two papers: Enhanced oxygen precipitation in electron irradiated silicon. Annealing of electron irradiated antimony-doped Czochralski silicon

  13. Positron probing of open vacancy volume of phosphorus-vacancy complexes in float-zone n-type silicon irradiated by 0.9-MeV electrons and by 15-MeV protons

    Energy Technology Data Exchange (ETDEWEB)

    Arutyunov, Nikolay [Department of Physics, Martin Luther University Halle (Germany); Ioffe Physico-Technical Institute, St. Petersburg (Russian Federation); Institute of Ion-Plasma and Laser Technologies (Institute of Electronics), Tashkent (Uzbekistan); Emtsev, Vadim; Oganesyan, Gagik [Ioffe Physico-Technical Institute, St. Petersburg (Russian Federation); Elsayed, Mohamed [Department of Physics, Martin Luther University Halle (Germany); Faculty of Science, Department of Physics, Minia University (Egypt); Krause-Rehberg, Reinhard [Department of Physics, Martin Luther University Halle (Germany); Abrosimov, Nikolay [Leibniz Institute for Crystal Growth, Berlin (Germany); Kozlovski, Vitalii [St. Petersburg State Polytechnical University (Russian Federation)

    2017-07-15

    For the first time the samples, cut from the same wafer of crystals of float-zone silicon, n-FZ-Si(P) and n-FZ-Si(Bi), were subjected to irradiation with 0.9-MeV electrons and 15-MeV protons at RT for studying them by low-temperature positron annihilation lifetime spectroscopy. Measurements of Hall effect have been used for the materials characterization. The discussion is focused on the open vacancy volume (V{sub op}) of the thermally stable group-V-impurity-vacancy complexes comprising the phosphorus atoms; the bismuth-related vacancy complexes are briefly considered. The data of positron probing of PV pairs (E-centers), divacancies, and the thermally stable defects in the irradiated n-FZ-Si(P) materials are compared. Beyond a reliable detecting of the defect-related positron annihilation lifetime in the course of isochronal annealing at ∝ 500 C, the recovery of concentration of phosphorus-related shallow donor states continues up to ∝650-700 C. The open vacancy volumes V{sub op} to be characterized by long positron lifetimes Δτ{sub 2} ∝271-289 ps in (gr.-V-atom)-V{sub op} complexes are compared with theoretical data available for the vacancies, τ(V{sub 1}), and divacancies, τ(V{sub 2}). The extended semi-vacancies, 2V{sub s-ext}, and relaxed vacancies, 2V{sub inw}, are proposed as the open volume V{sub op} in (gr.-V-atom)-V{sub op} complexes. It is argued that at high annealing temperature the defect P{sub s}-V{sub op}-P{sub s} is decomposed. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Dose controlled low energy electron irradiator for biomolecular films.

    Science.gov (United States)

    Kumar, S V K; Tare, Satej T; Upalekar, Yogesh V; Tsering, Thupten

    2016-03-01

    We have developed a multi target, Low Energy Electron (LEE), precise dose controlled irradiator for biomolecular films. Up to seven samples can be irradiated one after another at any preset electron energy and dose under UHV conditions without venting the chamber. In addition, one more sample goes through all the steps except irradiation, which can be used as control for comparison with the irradiated samples. All the samples are protected against stray electron irradiation by biasing them at -20 V during the entire period, except during irradiation. Ethernet based communication electronics hardware, LEE beam control electronics and computer interface were developed in house. The user Graphical User Interface to control the irradiation and dose measurement was developed using National Instruments Lab Windows CVI. The working and reliability of the dose controlled irradiator has been fully tested over the electron energy range of 0.5 to 500 eV by studying LEE induced single strand breaks to ΦX174 RF1 dsDNA.

  15. Design of electron detection system for pulse electron irradiator

    International Nuclear Information System (INIS)

    Anjar Anggraini H; Agus Purwadi; Lely Susita RM; Bambang Siswanto; Agus Wijayanto

    2016-01-01

    Design of electron detection system for pulse electron irradiator has been conducted on the Plasma Cathode Electron Source by Rogowski coil technique. Rogowski coil has ability to capture the induced magnetic field of the electric current, subsequent induced magnetic field will provide voltage after passing integrator. This diagnostic used combination of copper wire, ferrite and RC integrator. The design depends on the pulse width and the value of plasma current that passes through the coil, thus the number of windings, coil area and integrator can be designed. For plasma spots current of IDPS expected to be 10 A and pulse width 10 μs the Rogowski coil using MnZn ferrite with inductance L = 0.275 mH and permeability μr = 200 H/m. For the current of plasma arc ADPS expected to be 100 A and pulse width 100 μs by using inductance L=1.9634 mH and permeability μr = 6256 H/m. Electron current in extraction system expected to be 30 A and pulse width 100 μs the Rogowski coil using inductance L=51.749 mH and permeability μr= 4987 H/m. Design integrator used is the type of RC integrator. (author)

  16. Ignitor electrode system design for the pulses electron irradiators device

    International Nuclear Information System (INIS)

    Lely Susita RM; Ihwanul Aziz

    2016-01-01

    The designed ignitor electrode system is a system used to initiate the plasma discharge. It consists of two pieces which are placed on both side of the plasma vessel. Each of the ignitor electrode system consists of a cathode, an anode and insulator between the cathode and the anode. The best cathode material for ignitor electrode system is Mg due to its lowest ion erosion rate (γi =11.7 μg/C) and its low cohesive energy (1.51 eV). The specifications of ignitor electrode system designed for the pulse electron irradiators is as follow: Mg cathode materials in the form of rod having a diameter of 6.35 mm and length of 76.75 mm. Anode material are made of non magnetic of SS 304 cylinder shaped with an outer diameter of 88.53 mm, an inner diameter of 81.53 mm and a thickness of 3.50 mm. Insulating material between the cathode and the anode is made of teflon cylinder shaped, outer diameter of 9.50 mm, an inner diameter of 6.35 mm and a length of 30 mm. Based on the ignitor electrode system design, the next step is construction and function test of the ignitor electrode system. (author)

  17. Dose controlled low energy electron irradiator for biomolecular films

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, S. V. K., E-mail: svkk@tifr.res.in; Tare, Satej T.; Upalekar, Yogesh V.; Tsering, Thupten [Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai 400 005 (India)

    2016-03-15

    We have developed a multi target, Low Energy Electron (LEE), precise dose controlled irradiator for biomolecular films. Up to seven samples can be irradiated one after another at any preset electron energy and dose under UHV conditions without venting the chamber. In addition, one more sample goes through all the steps except irradiation, which can be used as control for comparison with the irradiated samples. All the samples are protected against stray electron irradiation by biasing them at −20 V during the entire period, except during irradiation. Ethernet based communication electronics hardware, LEE beam control electronics and computer interface were developed in house. The user Graphical User Interface to control the irradiation and dose measurement was developed using National Instruments Lab Windows CVI. The working and reliability of the dose controlled irradiator has been fully tested over the electron energy range of 0.5 to 500 eV by studying LEE induced single strand breaks to ΦX174 RF1 dsDNA.

  18. Rotational total skin electron irradiation with a linear accelerator

    Science.gov (United States)

    Evans, Michael D.C.; Devic, Slobodan; Parker, William; Freeman, Carolyn R.; Roberge, David; Podgorsak, Ervin B.

    2008-01-01

    The rotational total skin electron irradiation (RTSEI) technique at our institution has undergone several developments over the past few years. Replacement of the formerly used linear accelerator has prompted many modifications to the previous technique. With the current technique, the patient is treated with a single large field while standing on a rotating platform, at a source‐to‐surface distance of 380 cm. The electron field is produced by a Varian 21EX linear accelerator using the commercially available 6 MeV high dose rate total skin electron mode, along with a custom‐built flattening filter. Ionization chambers, radiochromic film, and MOSFET (metal oxide semiconductor field effect transistor) detectors have been used to determine the dosimetric properties of this technique. Measurements investigating the stationary beam properties, the effects of full rotation, and the dose distributions to a humanoid phantom are reported. The current treatment technique and dose regimen are also described. PACS numbers: 87.55.ne, 87.53.Hv, 87.53.Mr

  19. Introduction and recovery of point defects in electron-irradiated ZnO

    International Nuclear Information System (INIS)

    Tuomisto, F.; Saarinen, K.; Look, D.C.; Farlow, G.C.

    2005-01-01

    We have used positron annihilation spectroscopy to study the introduction and recovery of point defects in electron-irradiated n-type ZnO. The irradiation (E el =2 MeV, fluence 6x10 17 cm -2 ) was performed at room temperature, and isochronal annealings were performed from 300 to 600 K. In addition, monochromatic illumination of the samples during low-temperature positron measurements was used in identification of the defects. We distinguish two kinds of vacancy defects: the Zn and O vacancies, which are either isolated or belong to defect complexes. In addition, we observe negative-ion-type defects, which are attributed to O interstitials or O antisites. The Zn vacancies and negative ions act as compensating centers and are introduced at a concentration [V Zn ]≅c ion ≅2x10 16 cm -3 . The O vacancies are introduced at a 10-times-larger concentration [V O ]≅3x10 17 cm -3 and are suggested to be isolated. The O vacancies are observed as neutral at low temperatures, and an ionization energy of 100 meV could be fitted with the help of temperature-dependent Hall data, thus indicating their deep donor character. The irradiation-induced defects fully recover after the annealing at 600 K, in good agreement with electrical measurements. The Zn vacancies recover in two separate stages, indicating that the Zn vacancies are parts of two different defect complexes. The O vacancies anneal simultaneously with the Zn vacancies at the later stage, with an activation energy of E V,O m =1.8±0.1 eV. The negative ions anneal out between the two annealing stages of the vacancies

  20. The effect of alloying elements on the vacancy defect evolution in electron-irradiated austenitic Fe-Ni alloys studied by positron annihilation

    Energy Technology Data Exchange (ETDEWEB)

    Druzhkov, A.P. [Institute of Metal Physics, Ural Branch RAS, 18 Kovalevskaya St., 620041 Ekaterinburg (Russian Federation)], E-mail: druzhkov@imp.uran.ru; Perminov, D.A.; Davletshin, A.E. [Institute of Metal Physics, Ural Branch RAS, 18 Kovalevskaya St., 620041 Ekaterinburg (Russian Federation)

    2009-01-31

    The vacancy defect evolution under electron irradiation in austenitic Fe-34.2 wt% Ni alloys containing oversized (aluminum) and undersized (silicon) alloying elements was investigated by positron annihilation spectroscopy at temperatures between 300 and 573 K. It is found that the accumulation of vacancy defects is considerably suppressed in the silicon-doped alloy. This effect is observed at all the irradiation temperatures. The obtained results provide evidence that the silicon-doped alloy forms stable low-mobility clusters involving several Si and interstitial atoms, which are centers of the enhanced recombination of migrating vacancies. The clusters of Si-interstitial atoms also modify the annealing of vacancy defects in the Fe-Ni-Si alloy. The interaction between small vacancy agglomerates and solute Al atoms is observed in the Fe-Ni-Al alloy under irradiation at 300-423 K.

  1. Low-energy electron irradiation induced top-surface nanocrystallization of amorphous carbon film

    Science.gov (United States)

    Chen, Cheng; Fan, Xue; Diao, Dongfeng

    2016-10-01

    We report a low-energy electron irradiation method to nanocrystallize the top-surface of amorphous carbon film in electron cyclotron resonance plasma system. The nanostructure evolution of the carbon film as a function of electron irradiation density and time was examined by transmission electron microscope (TEM) and Raman spectroscopy. The results showed that the electron irradiation gave rise to the formation of sp2 nanocrystallites in the film top-surface within 4 nm thickness. The formation of sp2 nanocrystallite was ascribed to the inelastic electron scattering in the top-surface of carbon film. The frictional property of low-energy electron irradiated film was measured by a pin-on-disk tribometer. The sp2 nanocrystallized top-surface induced a lower friction coefficient than that of the original pure amorphous film. This method enables a convenient nanocrystallization of amorphous surface.

  2. Correlation between electron-irradiation defects and applied stress in graphene: A molecular dynamics study

    Energy Technology Data Exchange (ETDEWEB)

    Kida, Shogo; Yamamoto, Masaya; Kawata, Hiroaki; Hirai, Yoshihiko; Yasuda, Masaaki, E-mail: yasuda@pe.osakafu-u.ac.jp [Department of Physics and Electronics, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan); Tada, Kazuhiro [Department of Electrical and Control Systems Engineering, National Institute of Technology, Toyama College, Toyama 939-8630 (Japan)

    2015-09-15

    Molecular dynamics (MD) simulations are performed to study the correlation between electron irradiation defects and applied stress in graphene. The electron irradiation effect is introduced by the binary collision model in the MD simulation. By applying a tensile stress to graphene, the number of adatom-vacancy (AV) and Stone–Wales (SW) defects increase under electron irradiation, while the number of single-vacancy defects is not noticeably affected by the applied stress. Both the activation and formation energies of an AV defect and the activation energy of an SW defect decrease when a tensile stress is applied to graphene. Applying tensile stress also relaxes the compression stress associated with SW defect formation. These effects induced by the applied stress cause the increase in AV and SW defect formation under electron irradiation.

  3. Electron irradiated liquid encapsulated Czochralski grown undoped gallium antimonide studied by positron lifetime spectroscopy and photoluminescence

    International Nuclear Information System (INIS)

    Ma, S K; Lui, M K; Ling, C C; Fung, S; Beling, C D; Li, K F; Cheah, K W; Gong, M; Hang, H S; Weng, H M

    2004-01-01

    Electron irradiated undoped liquid encapsulated Czochralski (LEC) grown GaSb samples were studied by positron lifetime spectroscopy (PLS) and photoluminescence (PL). In addition to the 315 ps component reported in the previous studies, another defect with a lifetime of 280 ps was also identified in the present electron irradiated samples. The bulk lifetime of the GaSb material was found to be 258 ps. The V Ga,280ps and the V Ga,315ps defects were associated with two independent Ga vacancy related defects having different microstructures. The well known 777 meV PL signal (usually band A) was also observed in the electron irradiated undoped GaSb samples. The band A intensity decreases with increasing electron irradiation dosage and it disappears after the 300 deg. C annealing regardless of the irradiation dosage. The origin of the band A signal is also discussed

  4. Electron irradiation effect on bubble formation and growth in a sodium borosilicate glass

    International Nuclear Information System (INIS)

    Chen, X.; Birtcher, R. C.; Donnelly, S. E.

    2000-01-01

    In this study, the authors studied simultaneous and intermittent electron irradiation effects on bubble growth in a simple sodium borosilicate glass during Xe ion implantation at 200 C. Simultaneous electron irradiation increases the average bubble size in the glass. This enhanced diffusion is also shown by the migration of Xe from bubbles into the matrix when the sample is irradiated by an electron beam after the Xe implantation

  5. Industrial n-type solar cells with >20% cell efficiency

    Energy Technology Data Exchange (ETDEWEB)

    Romijn, I.G.; Anker, J.; Burgers, A.R.; Gutjahr, A.; Koppes, M.; Kossen, E.J.; Lamers, M.W.P.E.; Heurtault, Benoit; Saynova-Oosterling, D.S.; Tool, C.J.J. [ECN Solar Energy, Petten (Netherlands)

    2013-03-15

    To realize high efficiencies at low costs, ECN has developed the n-Pasha solar cell concept. The n-Pasha cell concept is a bifacial solar cell concept on n-Cz base material, with which average efficiencies of above 20% have been demonstrated. In this paper recent developments at ECN to improve the cost of ownership (lower Euro/Wp) of the n-Pasha cell concept are discussed. Two main drivers for the manufacturing costs of n-type solar cells are addressed: the n-type Cz silicon material and the silver consumption. We show that a large resistivity range between 2 and 8 cm can be tolerated for high cell efficiency, and that the costs due to the silver metallization can be significantly reduced while increasing the solar cell efficiency. Combining the improved efficiency and cost reduction makes the n-Pasha cell concept a very cost effective solution to manufacture high efficient solar cells and modules.

  6. Impact of low-dose electron irradiation on $n^+p$ silicon strip sensors

    CERN Document Server

    The CMS Tracker Collaboration

    2014-01-01

    % The measurements were performed over periods between 5 and 10 days. After only a few hours of making measurements, significant changes in charge collection and charge sharing were observed. Annealing studies, with temperatures up to $80^\\circ $C and annealing times of 18\\,hours, showed that the changes can on...

  7. Temperature, stress, and annealing effects on the luminescence from electron-irradiated silicon

    Science.gov (United States)

    Jones, C. E.; Johnson, E. S.; Compton, W. D.; Noonan, J. R.; Streetman, B. G.

    1973-01-01

    Low-temperature photoluminescence spectra are presented for Si crystals which have been irradiated with high-energy electrons. Studies of isochronal annealing, stress effects, and the temperature dependences of the luminescence are used to discuss the nature of the luminescent transitions and the properties of defects. Two dominant bands present after room-temperature anneal of irradiated material are discussed, and correlations of the properties of these bands are made with known Si defects. A band between 0.8 and 1.0 eV has properties which are related to those of the divacancy, and a band between 0.6 and 0.8 eV has properties related to those of the Si-G15(K) center. Additional peaks appear in the luminescence after high-temperature anneal; the influence of impurities and the effects of annealing of these lines are discussed.

  8. Impact of low-dose electron irradiation on n$^+$p silicon strip sensors

    CERN Document Server

    Klanner, Robert

    2014-01-01

    Significant changes in the charge collection and charge sharing were observed as function of $^{90}$Sr irradiation dose. Annealing studies, with temperatures up to $80^\\circ $C and annealing times of 18\\,hours, show that the changes can only be partially annealed. The observations ...

  9. Influence of electron irradiation at elevated temperatures on silicon diffuse structures with p-n-junctions

    International Nuclear Information System (INIS)

    Korshunov, F.P.; Marchenko, I.G.

    2012-01-01

    The behavior of the lifetime of nonequilibrium carriers (τ), reverse current (I R ), and forward voltage drop (U F ) in industrial p + -n-n + -diodes irradiated with electrons (E=6 MeV) at temperatures for the range T irr = 20-400 Celsius degree was investigated. The tests were conducted on the samples manufactured on phosphorous doped single-crystal Si during the CZ growing process of ingot (KAF) and using the nuclear reactions (KOF). The investigation showed that the problem to reach smaller τ values with a minimal increase of U F and I R in fast diodes can be solved by means of selection of a technological irradiation temperature regime. It was determined that the comparable changes of the τ value in the diode base area, the best trade-off of U F and I R in the samples (KAF) is observed at T irr = 300 Celsius degree, and in the KOF samples at T irr = 350 Celsius degree. (authors)

  10. Influence of electron irradiation on hydrothermally grown zinc oxide single crystals

    International Nuclear Information System (INIS)

    Lu, L W; So, C K; Zhu, C Y; Gu, Q L; Fung, S; Ling, C C; Li, C J; Brauer, G; Anwand, W; Skorupa, W

    2008-01-01

    The resistivity of hydrothermally grown ZnO single crystals increased from ∼10 3 Ω cm to ∼10 6 Ω cm after 1.8 MeV electron irradiation with a fluence of ∼10 16 cm −2 , and to ∼10 9 Ω cm as the fluence increased to ∼10 18 cm −2 . Defects in samples were studied by thermally stimulated current (TSC) spectroscopy and positron lifetime spectroscopy (PLS). After the electron irradiation with a fluence of 10 18 cm −2 , the normalized TSC signal increased by a factor of ∼100. A Zn vacancy was also introduced by the electron irradiation, though with a concentration lower than expected. After annealing in air at 400 °C, the resistivity and the deep traps concentrations recovered to the levels of the as-grown sample, and the Zn vacancy was removed

  11. Monte Carlo study of electron irradiation effect on YBCO dpa profiles

    International Nuclear Information System (INIS)

    Pinnera, I.; Cruz, C.; Abreu, Y.; Leyva, A.; Van Espen, P.

    2011-01-01

    The Monte Carlo assisted Classical Method (MCCM) consists on a calculation procedure for determining the displacements per atom (dpa) distribution in solid materials. This algorithm allows studying the gamma and electron irradiation damage in different materials. It is based on the electrons elastic scattering classic theories and the use of Monte Carlo simulation for the physical processes involved. The present study deals with the Monte Carlo simulation of electron irradiation effects on YBa 2 Cu 3 O 7-x (YBCO) slabs using the MCNPX code system. Displacements per atom distributions are obtained through the MCCM for electron irradiation up to 10 MeV. In-depth dpa profiles for electrons and positrons are obtained and analyzed. Also, for each atomic species in the material, the dpa distributions are calculated. All the results are discussed in the present contribution. (Author)

  12. An AES Study of the Room Temperature Surface Conditioning of Technological Metal Surfaces by Electron Irradiation

    CERN Document Server

    Scheuerlein, C; Taborelli, M; Brown, A; Baker, M A

    2002-01-01

    The modifications to technological copper and niobium surfaces induced by 2.5 keV electron irradiation have been investigated in the context of the conditioning process occurring in particle accelerator ultra high vacuum systems. Changes in the elemental surface composition have been found using Scanning Auger Microscopy (SAM) by monitoring the carbon, oxygen and metal Auger peak intensities as a function of electron irradiation in the dose range 10-6 to 10-2 C mm-2. The surface analysis results are compared with electron dose dependent secondary electron and electron stimulated desorption yield measurements. Initially the electron irradiation causes a surface cleaning through electron stimulated desorption, in particular of hydrogen. During this period both the electron stimulated desorption and secondary electron yield decrease as a function of electron dose. When the electron dose exceeds 10-4 C mm-2 electron stimulated desorption yields are reduced by several orders of magnitude and the electron beam indu...

  13. Defects in electron irradiated vitreous SiO2 probed by positron annihiliation

    International Nuclear Information System (INIS)

    Uedono, Akira; Tanigawa, Shoichiro; Kawano, Takao; Itoh, Hisayoshi

    1994-01-01

    Defects in 3 MeV electron irradiated vitreous SiO 2 (v-SiO 2 ) were probed by the positron annihilation technique. For unirradiated v-SiO 2 specimens, almost all positrons were found to annihilate from positronium (Ps) states. This high formation probability of Ps was attributed to the trapping of positrons by open-space defects. The formation probability of Ps was decreased by the electron irradiation. The observed inhibition of the Ps formation was attributed to the trapping of positrons by point defects introduced and/or activated by the irradiation. From measurements of the lifetime distribution of Ps, it was found that, by the electron irradiation, the mean size of open-space defects was decreased and the size distribution of such defects was broadened. (Author)

  14. Defects in electron irradiated vitreous SiO[sub 2] probed by positron annihiliation

    Energy Technology Data Exchange (ETDEWEB)

    Uedono, Akira; Tanigawa, Shoichiro (Tsukuba Univ., Ibaraki (Japan). Inst. of Materials Science); Kawano, Takao (Tsukuba Univ., Ibaraki (Japan). Radioisotope Centre); Itoh, Hisayoshi (Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment)

    1994-10-10

    Defects in 3 MeV electron irradiated vitreous SiO[sub 2] (v-SiO[sub 2]) were probed by the positron annihilation technique. For unirradiated v-SiO[sub 2] specimens, almost all positrons were found to annihilate from positronium (Ps) states. This high formation probability of Ps was attributed to the trapping of positrons by open-space defects. The formation probability of Ps was decreased by the electron irradiation. The observed inhibition of the Ps formation was attributed to the trapping of positrons by point defects introduced and/or activated by the irradiation. From measurements of the lifetime distribution of Ps, it was found that, by the electron irradiation, the mean size of open-space defects was decreased and the size distribution of such defects was broadened. (Author).

  15. Interaction of electron irradiation with nitrogen-related deep levels in InGaAsN

    International Nuclear Information System (INIS)

    Khan, Aurangzeb; Gou, J.; Imazumi, M.; Yamaguchi, M.

    2007-01-01

    The authors present an investigation of 1 MeV electron irradiation-induced defects in p-InGaAsN and their impact on nitrogen-related defects. A hitherto existing nitrogen-related electron trap E1 (0.20 eV) shows a significant increase in concentration after 1 MeV electron irradiation. In addition, 1 MeV electron irradiation induced a hole trap H1 at energy of about 0.75 eV above the valence band. Isothermal annealing analysis indicates that E1 is a complex defect involving an interstitial or a substitutional atom in combination with some other defect, whose concentration is enhanced by irradiation. A correlation exists between the recovery of free carrier concentration and recovery of the E1 center to preradiation concentrations, which indicates the possibility of the E1 as an acceptorlike center

  16. Influence of electron irradiation on hydrothermally grown zinc oxide single crystals

    Science.gov (United States)

    Lu, L. W.; So, C. K.; Zhu, C. Y.; Gu, Q. L.; Li, C. J.; Fung, S.; Brauer, G.; Anwand, W.; Skorupa, W.; Ling, C. C.

    2008-09-01

    The resistivity of hydrothermally grown ZnO single crystals increased from ~103 Ω cm to ~106 Ω cm after 1.8 MeV electron irradiation with a fluence of ~1016 cm-2, and to ~109 Ω cm as the fluence increased to ~1018 cm-2. Defects in samples were studied by thermally stimulated current (TSC) spectroscopy and positron lifetime spectroscopy (PLS). After the electron irradiation with a fluence of 1018 cm-2, the normalized TSC signal increased by a factor of ~100. A Zn vacancy was also introduced by the electron irradiation, though with a concentration lower than expected. After annealing in air at 400 °C, the resistivity and the deep traps concentrations recovered to the levels of the as-grown sample, and the Zn vacancy was removed.

  17. An AES Study of the Room Temperature Surface Conditioning of Technological Metal Surfaces by Electron Irradiation

    OpenAIRE

    Scheuerlein, C; Hilleret, Noël; Taborelli, M; Brown, A; Baker, M A

    2002-01-01

    The modifications to technological copper and niobium surfaces induced by 2.5 keV electron irradiation have been investigated in the context of the conditioning process occurring in particle accelerator ultra high vacuum systems. Changes in the elemental surface composition have been found using Scanning Auger Microscopy (SAM) by monitoring the carbon, oxygen and metal Auger peak intensities as a function of electron irradiation in the dose range 10-6 to 10-2 C mm-2. The surface analysis resu...

  18. Comparison of electron-irradiation and gamma-irradiation as a decontamination treatment of spices

    International Nuclear Information System (INIS)

    Hayashi, Toru; Todoriki, Setsuko; Mamun.

    1993-01-01

    Electron-irradiation at 10 kGy decontaminated all the eight kinds of spices (black pepper, white pepper, nutmeg, red pepper, parsley, paprika, laurel and onion powder) to the microbial levels lower than 10 2 /g. Similar sterilization effects by the irradiation were observed on heat-resistant bacterial spores. The 10 kGy irradiation did not significantly affect the contents of essential oils and colors of the spices. These results indicate that electron-irradiation at 10 kGy effectively decontaminates spices without notable adverse effect on the qualities. The disinfecting effect of electron beams on spices was smaller than that of gamma-rays. (author)

  19. Influence of electron irradiation on the structural and thermal properties of silk fibroin films

    Energy Technology Data Exchange (ETDEWEB)

    Asha, S.; Sangappa,; Sanjeev, Ganesh, E-mail: ganeshanjeev@rediffmail.com [Department of Studies in Physics, Mangalore University, Mangalagangotri, Mangalore - 574 199 (India)

    2015-06-24

    Radiation-induced changes in Bombyx mori silk fibroin (SF) films under electron irradiation were investigated and correlated with dose. SF films were irradiated in air at room temperature using 8 MeV electron beam in the range 0-150 kGy. Various properties of the irradiated SF films were studied using X-ray diffraction (XRD), Differential Scanning Calorimetry (DSC) and Thermogravimetric Analysis (TGA). Electron irradiation was found to induce changes in the physical and thermal properties, depending on the radiation dose.

  20. A low temperature cryostat with a refrigerator for studying electron-irradiation effects on solids, 2

    International Nuclear Information System (INIS)

    Oka, Takashi; Yoshida, Toshio; Shono, Yoshihiko

    1978-01-01

    A convenient cryostat with a small cryogenic refrigerator for studying electron-irradiation effects on solids is reported. The lowest temperature at the sample room is about 10 K or less. In a temperature region below 80 K, the sample temperature can be controlled within 0.05 K. (auth.)

  1. Amorphization of Zr3Al by hydrogenation and subsequent electron irradiation

    International Nuclear Information System (INIS)

    Meng, W.J.; Koike, J.; Okamoto, P.R.; Rehn, L.E.

    1988-12-01

    1-MeV electron irradiation of hydrogenated Zr 3 Al (Zr 3 AlH/sub 0.96/) at 10K is studied. A more than 20 fold reduction in the critical dose required for complete amorphization is observed for the hydrogenated specimen as compared to the un-hydrogenated Zr 3 Al under identical irradiation conditions. 11 refs., 4 figs

  2. Dissociated Structure of Dislocation Loops with Burgers Vector alpha in Electron-Irradiated Cu-Ni

    DEFF Research Database (Denmark)

    Bilde-Sørensen, Jørgen; Leffers, Torben; Barlow, P.

    1977-01-01

    The rectangular dislocation loops with total Burgers vector a100 which are formed in Cu-Ni alloys during 1 MeV electron irradiation at elevated temperatures have been examined by weak-beam electron microscopy. The loop edges were found to take up a Hirth-lock configuration, dissociating into two ...

  3. In-situ studies on phase transformations under electron irradiation in ...

    Indian Academy of Sciences (India)

    M. Senthilkumar (Newgen Imaging) 1461 1996 Oct 15 13:05:22

    under 1 MeV electron irradiation at 300 K has been recorded in HVEM experiments. The similarity of the diffuse intensity distribution in these two cases brings out the importance of the lattice collapse mechanism in both the cases. 2. Crystallography of the ordered phases in Ni–Mo system. The equilibrium phase diagram of ...

  4. Investigations on the optical, thermal and surface modifications of electron irradiated L-threonine single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Ramesh Kumar, G.; Gokul Raj, S. [Department of Physics, Presidency College, Chepauk, Chennai 600005 (India); Bogle, K.A.; Dhole, S.D.; Bhoraskar, V.N. [Department of Physics, University of Pune, Pune 411007 (India); Mohan, R. [Department of Physics, Presidency College, Chepauk, Chennai 600005 (India)], E-mail: professormohan@yahoo.co.in

    2008-06-15

    L-Threonine single crystals have been irradiated by 6 MeV electrons. Irradiated crystals at various electron fluences were subjected to various techniques such as UV-vis-NIR, atomic force microscopy (AFM) and thermomechanical analyses. Thermal strength of the irradiated crystals has also been studied through differential scanning calorimetry (DSC) measurements. The results have been discussed in detail.

  5. In-situ observations of point-defect precipitation at dislocations in electron-irradiated silver

    International Nuclear Information System (INIS)

    Jenkins, M.L.; Hardy, G.J.; Kirk, M.A.

    1986-09-01

    In-situ weak-beam observations of the development of electron irradiation damage at dislocations in silver are described. Dislocations constrict and promote in their vicinity the formation of stacking-fault tetrahedra. The possibility that these are of interstitial nature is discussed

  6. Luminescence of porous silicon doped by erbium

    International Nuclear Information System (INIS)

    Bondarenko, V.P.; Vorozov, N.N.; Dolgij, L.N.; Dorofeev, A.M.; Kazyuchits, N.M.; Leshok, A.A.; Troyanova, G.N.

    1996-01-01

    The possibility of the 1.54 μm intensive luminescence in the silicon dense porous layers, doped by erbium, with various structures is shown. Low-porous materials of both porous type on the p-type silicon and porous silicon with wood-like structure on the n + type silicon may be used for formation of light-emitting structures

  7. Potassium-doped n-type bilayer graphene

    Science.gov (United States)

    Yamada, Takatoshi; Okigawa, Yuki; Hasegawa, Masataka

    2018-01-01

    Potassium-doped n-type bilayer graphene was obtained. Chemical vapor deposited bilayer and single layer graphene on copper (Cu) foils were used. After etching of Cu foils, graphene was dipped in potassium hydroxide aqueous solutions to dope potassium. Graphene on silicon oxide was characterized by X-ray photoelectron spectroscopy (XPS), energy dispersive X-ray spectroscopy (EDX), and Raman spectroscopy. Both XPS and EDX spectra indicated potassium incorporation into the bilayer graphene via intercalation between the graphene sheets. The downward shift of the 2D peak position of bilayer graphene after the potassium hydroxide (KOH) treatment was confirmed in Raman spectra, indicating that the KOH-treated bilayer graphene was doped with electrons. Electrical properties were measured using Hall bar structures. The Dirac points of bilayer graphene were shifted from positive to negative by the KOH treatment, indicating that the KOH-treated bilayer graphene was n-type conduction. For single layer graphene after the KOH treatment, although electron doping was confirmed from Raman spectra, the peak of potassium in the X-ray photoelectron spectroscopy (XPS) spectrum was not detected. The Dirac points of single layer graphene with and without the KOH treatment showed positive.

  8. Investigation of a combined platinum and electron lifetime control treatment for silicon

    International Nuclear Information System (INIS)

    Jia, Yunpeng; Cui, Zhihang; Yang, Fei; Zhao, Bao; Zou, Shikai; Liang, Yongsheng

    2017-01-01

    In silicon, the effect of Combined Lifetime Treatment (CLT) involving platinum diffusion and subsequent electron irradiation is different from the separate treatments of platinum diffusion and electron irradiation, even the treatment of electron irradiation followed by platinum diffusion. In this paper, we investigated the experimental behavior of different kinds of lifetime treated samples. We found that the reverse leakage current (I rr ) increases with the increasing platinum diffusion temperature or electron irradiation dose in the separate treatments. Conversely, I rr of the CLT samples decreased with rising platinum diffusion temperature at the same dose of subsequent electron irradiation. By deep-level transient spectroscopy (DLTS), a new energy level E7 (Ec −0.376 eV) was found in our CLT samples. The new level E7 suppresses the dominance of the deeper level E8 (Ec −0.476 eV), which is caused by electron irradiation directly and results in I rr ’s increase. The formation of the level E7 comes from the complex defect-combined effect between platinum atoms and silicon vacancies, and it affects device’s characteristics finally. These research will be helpful to the development of platinum-diffused devices used in intense electron irradiation environments.

  9. Investigation of a combined platinum and electron lifetime control treatment for silicon

    Energy Technology Data Exchange (ETDEWEB)

    Jia, Yunpeng [College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124 (China); Cui, Zhihang, E-mail: czhczh321321@126.com [College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124 (China); Yang, Fei [State Grid Smart Electrical Engineering, Beijing 100192 (China); Zhao, Bao; Zou, Shikai; Liang, Yongsheng [College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124 (China)

    2017-02-01

    In silicon, the effect of Combined Lifetime Treatment (CLT) involving platinum diffusion and subsequent electron irradiation is different from the separate treatments of platinum diffusion and electron irradiation, even the treatment of electron irradiation followed by platinum diffusion. In this paper, we investigated the experimental behavior of different kinds of lifetime treated samples. We found that the reverse leakage current (I{sub rr}) increases with the increasing platinum diffusion temperature or electron irradiation dose in the separate treatments. Conversely, I{sub rr} of the CLT samples decreased with rising platinum diffusion temperature at the same dose of subsequent electron irradiation. By deep-level transient spectroscopy (DLTS), a new energy level E7 (Ec −0.376 eV) was found in our CLT samples. The new level E7 suppresses the dominance of the deeper level E8 (Ec −0.476 eV), which is caused by electron irradiation directly and results in I{sub rr}’s increase. The formation of the level E7 comes from the complex defect-combined effect between platinum atoms and silicon vacancies, and it affects device’s characteristics finally. These research will be helpful to the development of platinum-diffused devices used in intense electron irradiation environments.

  10. Nuclear radiation detectors using high resistivity neutron transmutation doped silicon

    International Nuclear Information System (INIS)

    Gessner, T.; Irmer, K.

    1983-01-01

    A method for the production of semiconductor detectors based on high resistivity n-type silicon is described. The n-type silicon is produced by neutron irradiation of p-type silicon. The detectors are produced by planar technique. They are suitable for the spectrometry of alpha particles and for the pulse count measurement of beta particles at room temperature. (author)

  11. Electron-irradiation induced changes in structural and magnetic properties of Fe and Co based metallic glasses

    Energy Technology Data Exchange (ETDEWEB)

    Kane, S.N., E-mail: kane_sn@yahoo.com [School of Physics, D.A. University, Khandwa Road Campus, Indore 452001 (India); Satalkar, M., E-mail: satalkar.manvi@gmail.com [School of Physics, D.A. University, Khandwa Road Campus, Indore 452001 (India); Ghosh, A.; Shah, M. [School of Physics, D.A. University, Khandwa Road Campus, Indore 452001 (India); Ghodke, N. [UGC-DAE CSR, University Campus, Khandwa Road, Indore 452001 (India); Pramod, R.; Sinha, A.K.; Singh, M.N.; Dwivedi, J. [Raja Ramanna Centre for Advanced Technology, P.O. CAT, Indore 452013 (India); Coisson, M.; Celegato, F.; Vinai, F.; Tiberto, P. [INRIM, Electromagnetism Division, Strada Delle Cacce 91, I-10135 TO (Italy); Varga, L.K. [RISSPO, Hungarian Academy of Sciences, P.O. Box 49, 1525 Budapest (Hungary)

    2014-12-05

    Highlights: • Enhancement of Ms by low electron irradiation dose in Fe-based alloy. • Variation of magnetic properties by electron irradiation induced ordered phase. • Electron irradiation alters TM-TM distance and, magnetic properties. - Abstract: Electron-irradiation induced changes in structural and, magnetic properties of Co{sub 57.6}Fe{sub 14.4}Si{sub 4.8}B{sub 19.2}Nb{sub 4}, Fe{sub 72}Si{sub 4.8}B{sub 19.2}Nb{sub 4} and, Co{sub 72}Si{sub 4.8}B{sub 19.2}Nb{sub 4} metallic glasses were studied using magnetic hysteresis and, synchrotron X-ray diffraction measurements. Results reveal composition dependent changes of magnetic properties in electron irradiated metallic glasses. A low electron irradiation dose (15 kGy) enhances saturation magnetization (up to 62%) in Fe-based alloy (Fe{sub 72}Si{sub 4.8}B{sub 19.2}Nb{sub 4}). Synchrotron XRD measurements reveal that electron irradiation transforms the amorphous matrix to a more ordered phase, accountable for changes in magnetic properties.

  12. Void formation in NiTi shape memory alloys by medium-voltage electron irradiation

    International Nuclear Information System (INIS)

    Schlossmacher, P.; Stober, T.

    1995-01-01

    In-situ electron irradiation experiments of NiTi shape memory alloys, using high-voltage transmission electron microscopes, result in amorphization of the intermetallic compound. In all of these experiments high-voltages more than 1.0 MeV had to be applied in order to induce the crystalline-to-amorphous transformation. To their knowledge no irradiation effects of medium-voltage electrons of e.g. 0.5 MeV have been reported in the literature. In this contribution, the authors describe void formation in two different NiTi shape memory alloys, resulting from in-situ electron irradiation, using a 300 kV electron beam in a transmission electron microscope. First evidence is presented that void formation is correlated with the total oxygen content of the alloys

  13. Fabrication of Nonvolatile Memory Effects in High-k Dielectric Thin Films Using Electron Irradiation

    International Nuclear Information System (INIS)

    Park, Chanrock; Cho, Daehee; Kim, Jeongeun; Hwang, Jinha

    2010-01-01

    Electron Irradiation can be applied towards nano-floating gate memories which are recognized as one of the next-generation nonvolatile memory semiconductors. NFGMs can overcome the preexisting limitations encountered in Dynamic Random Access Memories and Flash memories with the excellent advantages, i. e. high-density information storage, high response speed, high compactness, etc. The traditional nano-floating gate memories are fabricated through multi-layered nano structures of the dissimilar materials where the charge-trapping portions are sandwiched into the high-k dielectrics. However, this work reports the unique nonvolatile responses in single-layered high-k dielectric thin films if irradiated with highly accelerated electron beams. The implications of the electron irradiation will be discussed towards high-performance nano-floating gate memories

  14. Effect of electron irradiation on poly(vinylidene fluoride-trifluoroethylene) 56/44 mol% copolymers

    International Nuclear Information System (INIS)

    Guo, S S; Zhao, X-Z; Lu, S G; Lau, S T; Chan, H L W

    2004-01-01

    High-energy electron-irradiated poly(vinylidene fluoride-trifluoroethylene) 56/44 mol% copolymers are studied in a broad dose ranging from 0 to 110 Mrad. The experimental results are obtained by differential scanning calorimetry (DSC), x-ray diffraction, dielectric constant, dc conductivity and polarization hysteresis loop based on structural changes and dielectric relaxation behaviour. All the x-ray and DSC results show that both the crystalline and polar ordering decreased after irradiation, indicating a partial recovery from trans-gauche bonds to local trans bonds (polar ordering). The dielectric relaxation peaks, obeying the Vogel-Fulcher Law, indicate that the copolymers have transformed from a normal ferroelectric to a relaxor ferroelectric. It is also found that dc conductivity can be modulated with electron irradiation, as well as the hysteresis loop characteristics

  15. Multiwalled carbon nanotube destruction in the radiation damages to electron irradiation

    Directory of Open Access Journals (Sweden)

    T. M. Pinchuk-Rugal’

    2015-10-01

    Full Text Available Behavior of the X-ray diffraction and vibrational Raman spectra of multiwalled carbon nanotubes (MWCNT under high-energy electron irradiation (Ee = 1.8 MeV with large doses of absorption to 10 MGy were studied. With increasing dose uptake to 10.0 MGy, the interlayer correlation in the distribution of the individual graphene nanotubes nets not only is maintained, but is even improved. Defective bands D, D' and G band with increasing dose absorption have significant transformation, which show radiation damages of MWCNT. The destruction of nanotubes under electron irradiation is accompanied by increased regulation in the arrangement of individual nanotubes by interlayer cross-links involving interstitial atoms. The severity of degradation and cross-linking of MWCNT depends on the electron absorption dose.

  16. Dielectric properties of electron irradiated PbZrO 3 thin films

    Indian Academy of Sciences (India)

    The present paper deals with the study of the effects of electron (8 MeV) irradiation on the dielectric and ferroelectric properties of PbZrO3 thin films grown by sol–gel technique. The films were (0.62 m thick) subjected to electron irradiation using Microtron accelerator (delivered dose 80, 100, 120 kGy). The films were well ...

  17. Self-interstitials and Frenkel pairs in electron-irradiated germanium

    International Nuclear Information System (INIS)

    Carvalho, A.; Jones, R.; Goss, J.; Janke, C.; Coutinho, J.; Oberg, S.; Briddon, P.R.

    2007-01-01

    First principles calculations were used to study the structures and electrical levels of the self-interstitial in Ge. We considered the possibility of structural changes consequent with change in charge state and show these have important implications in the mobility and electrical activity of the defect. The theoretical model is compared to the results of low temperature electron irradiation in germanium reported in the literature

  18. Vacancy defects in electron-irradiated ZnO studied by Doppler broadening of annihilation radiation

    Science.gov (United States)

    Chen, Z. Q.; Betsuyaku, K.; Kawasuso, A.

    2008-03-01

    Vacancy defects in ZnO induced by electron irradiation were characterized by the Doppler broadening of annihilation radiation measurements together with the local density approximation calculations. Zinc vacancies (VZn) are responsible for positron trapping in the as-irradiated state. These are annealed out below 200°C . The further annealing at 400°C results in the formation of secondary defects attributed to the complexes composed of zinc vacancies and zinc antisites (VZn-ZnO) .

  19. Calculation of diffraction patterns associated with electron irradiation induced amorphization of CuTi

    International Nuclear Information System (INIS)

    Devanathan, R.; Meshii, M.; Sabochik, M.J.

    1990-11-01

    A new approach that uses the multislice method in conjunction with molecular dynamics simulations to study electron irradiation induced amorphisation is presented. Diffraction patterns were calculated for CuTi and found to be more sensitive than the pair correlation function to the structural changes preceding amorphisation. The results from this approach and from a study of long range order are presented. 16 refs., 8 figs

  20. Low-temperature annealing of radiation defects in electron-irradiated gallium phosphide

    International Nuclear Information System (INIS)

    Kolb, A.A.; Megela, I.G.; Buturlakin, A.P.; Goyer, D.B.

    1990-01-01

    The isochronal annealing of radiation defects in high-energy electron irradiated n-GaP monocrystals within the 77 to 300 K range has been investigated by optical and electrical techniques. The changes in conductance and charge carrier mobility as functions of annealing temperature as well as the variation of optical absorption spectra of GaP under irradiation and annealing provide evidence that most of radiation defects are likely secondary complexes of defects

  1. Total skin electron irradiation: evaluation of dose uniformity throughout the skin surface

    International Nuclear Information System (INIS)

    Anacak, Yavuz; Arican, Zumre; Bar-Deroma, Raquel; Tamir, Ada; Kuten, Abraham

    2003-01-01

    In this study, in vivo dosimetic data of 67 total skin electron irradiation (TSEI) treatments were analyzed. Thermoluminescent dosimetry (TLD) measurements were made at 10 different body points for every patient. The results demonstrated that the dose inhomogeneity throughout the skin surface is around 15%. The homogeneity was better at the trunk than at the extratrunk points, and was worse when a degrader was used. There was minimal improvement of homogeneity in subsequent days of treatment

  2. Bias dependent charge trapping in MOSFETs during 1 and 6 MeV electron irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Shinde, N.S. [Department of Chemical Engineering, Mie University, 5148507 (Japan); Kulkarni, V.R.; Mathakari, N.L.; Bhoraskar, V.N. [Department of Physics, Univeristy of Pune, Pune 411007 (India); Dhole, S.D. [Department of Physics, Univeristy of Pune, Pune 411007 (India)], E-mail: sanjay@physics.unipune.ernet.in

    2008-06-15

    To study irradiation-induced charge trapping in SiO{sub 2} and around the SiO{sub 2}-Si interface, depletion n-MOSFETs (metal-oxide-semiconductor field effect transistor) were used. The devices were gate biased during 1 and 6 MeV pulsed electron irradiation. The I{sub D}-V{sub DS} (drain current versus drain voltage) and I{sub D}-V{sub GS} (drain current versus gate voltage) characteristics were measured before and after irradiation. The shift in threshold voltage {delta}V{sub T} (difference in threshold voltage V{sub T} before and after irradiation) exhibited trends depending on the applied gate bias during 1 MeV electron irradiation. This behavior can be associated to the contribution of irradiation-induced negative charge {delta}N{sub IT} buildup around the SiO{sub 2}-Si interface to {delta}V{sub T}, which is sensitive to the electron tunneling from the substrates. However, only weak gate bias dependence was observed in 6 MeV electron irradiated devices. Independent of the energy loss and applied bias, the positive oxide trapped charge {delta}N{sub OT} is marginal and can be associated to thin and good quality of SiO{sub 2}. These results are explained using screening of free and acceptor states by the applied bias during irradiation, thereby reducing the total irradiation-induced charges.

  3. Corrosion of electron-irradiated Zr-2.5Nb and Zircaloy-2

    Energy Technology Data Exchange (ETDEWEB)

    Woo, O.-T.; McDougall, G.M.; Hutcheon, R.M.; Urbanic, V.F.; Griffiths, M.; Coleman, C.E

    2000-07-01

    We used 10-MeV electrons to rapidly produce radiation damage in zirconium alloys, investigated whether electrons produced the same microstructural changes as neutrons, then performed post-irradiation corrosion tests to determine whether electron-irradiated materials displayed similar corrosion behavior to neutron-irradiated materials. Two irradiations were completed using 10-MeV electrons with the beam normal to thin disks of material of 4 diameter slightly larger than the beam. The beam distribution. and disk cooling were designed to produce radial temperature and dose distributions having maxima at the disk center. A high-temperature irradiation was performed on annealed Zr-2.5Nb disks, achieving a central dose of 1.3 dpa and at a central temperature of {approx}450 deg C. After irradiation, the samples contained needle-like {beta}-Nb precipitates in the {alpha}-Zr matrix similar to those produced by neutrons. A low-temperature irradiation was performed on half-moon disks of Zr-2.5Nb and Zircaloy-2 pressure tube materials at 310 deg C central temperature and 1.3-dpa central dose. Dislocation loops were observed, again similar to those produced in neutron-irradiated materials. Some of the high-temperature electron-irradiated disks were exposed to 300 deg C moist air (saturated with D{sub 2}O), and in separate tests, high- and low-temperature irradiated disks were corroded in 300 deg C D{sub 2}0 (11.0 pD at room temperature) in an autoclave. Measurements of oxide thickness by Fourier Transform Infrared Reflectance (FTIR) spectroscopy showed that electron irradiation reduced the corrosion rate of Zr-2.5Nb compared with that of unirradiated material, as observed for neutron irradiation. For exposures to moist air and to D{sub 2}O, the theoretical deuterium uptakes for the electron-irradiated materials were, respectively, about 4 times and 1.5 to 2 times those for the unirradiated materials. This is also in good agreement with results for neutron-irradiated pressure

  4. Corrosion of electron-irradiated Zr-2.5Nb and Zircaloy-2

    International Nuclear Information System (INIS)

    Woo, O.-T.; McDougall, G.M.; Hutcheon, R.M.; Urbanic, V.F.; Griffiths, M.; Coleman, C.E.

    2000-01-01

    We used 10-MeV electrons to rapidly produce radiation damage in zirconium alloys, investigated whether electrons produced the same microstructural changes as neutrons, then performed post-irradiation corrosion tests to determine whether electron-irradiated materials displayed similar corrosion behavior to neutron-irradiated materials. Two irradiations were completed using 10-MeV electrons with the beam normal to thin disks of material of 4 diameter slightly larger than the beam. The beam distribution. and disk cooling were designed to produce radial temperature and dose distributions having maxima at the disk center. A high-temperature irradiation was performed on annealed Zr-2.5Nb disks, achieving a central dose of 1.3 dpa and at a central temperature of ∼450 deg C. After irradiation, the samples contained needle-like β-Nb precipitates in the α-Zr matrix similar to those produced by neutrons. A low-temperature irradiation was performed on half-moon disks of Zr-2.5Nb and Zircaloy-2 pressure tube materials at 310 deg C central temperature and 1.3-dpa central dose. Dislocation loops were observed, again similar to those produced in neutron-irradiated materials. Some of the high-temperature electron-irradiated disks were exposed to 300 deg C moist air (saturated with D 2 O), and in separate tests, high- and low-temperature irradiated disks were corroded in 300 deg C D 2 0 (11.0 pD at room temperature) in an autoclave. Measurements of oxide thickness by Fourier Transform Infrared Reflectance (FTIR) spectroscopy showed that electron irradiation reduced the corrosion rate of Zr-2.5Nb compared with that of unirradiated material, as observed for neutron irradiation. For exposures to moist air and to D 2 O, the theoretical deuterium uptakes for the electron-irradiated materials were, respectively, about 4 times and 1.5 to 2 times those for the unirradiated materials. This is also in good agreement with results for neutron-irradiated pressure tube materials. Thus, 10-Me

  5. Extrinsic doping in silicon revisited

    KAUST Repository

    Schwingenschlögl, Udo

    2010-06-17

    Both n-type and p-type doping of silicon is at odds with the charge transfer predicted by Pauling electronegativities and can only be reconciled if we no longer regarding dopant species as isolated atoms but rather consider them as clusters consisting of the dopant and its four nearest neighbor silicon atoms. The process that gives rise to n-type and p-type effects is the charge redistribution that occurs between the dopant and its neighbors, as we illustrate here using electronic structure calculations. This view point is able to explain why conventional substitutional n-type doping of carbon has been so difficult.

  6. Extrinsic doping in silicon revisited

    KAUST Repository

    Schwingenschlö gl, Udo; Chroneos, Alexander; Grimes, R. W.; Schuster, Cosima

    2010-01-01

    Both n-type and p-type doping of silicon is at odds with the charge transfer predicted by Pauling electronegativities and can only be reconciled if we no longer regarding dopant species as isolated atoms but rather consider them as clusters consisting of the dopant and its four nearest neighbor silicon atoms. The process that gives rise to n-type and p-type effects is the charge redistribution that occurs between the dopant and its neighbors, as we illustrate here using electronic structure calculations. This view point is able to explain why conventional substitutional n-type doping of carbon has been so difficult.

  7. Simulation optimizing of n-type HIT solar cells with AFORS-HET

    Science.gov (United States)

    Yao, Yao; Xiao, Shaoqing; Zhang, Xiumei; Gu, Xiaofeng

    2017-07-01

    This paper presents a study of heterojunction with intrinsic thin layer (HIT) solar cells based on n-type silicon substrates by a simulation software AFORS-HET. We have studied the influence of thickness, band gap of intrinsic layer and defect densities of every interface. Details in mechanisms are elaborated as well. The results show that the optimized efficiency reaches more than 23% which may give proper suggestions to practical preparation for HIT solar cells industry.

  8. Structural changes and tribological performance of thermosetting polyimide induced by proton and electron irradiation

    International Nuclear Information System (INIS)

    Lv, Mei; Wang, Yanming; Wang, Qihua; Wang, Tingmei; Liang, Yongmin

    2015-01-01

    The structural changes and tribological performance of thermosetting polyimide were investigated by electron, proton or both combined irradiations at 25 keV in a ground-based simulation facility. Three forms of irradiations could lead to the formation of the carbonized layer on the polymer surface that could increase the hardness and adhesive force of the material. Proton irradiation induced more extensive changes in structure and friction behavior than electron irradiation by reason of the higher linear energy transfer value, and combined irradiation resulted in the largest impact, but which was less than the sum of the radiation effects of electron and proton. Moreover, the experimental results indicated that the changes in friction behavior are closely related with the carbonized layer, which was easily worn out in friction process and could introduce a shift from adhesion wear to three-body abrasive wear that reduced the wear rate and the friction coefficient. The friction process of irradiated samples could be divided into the initial stage and the steady stage. Three forms of irradiations all induced the high friction coefficient in the initial stage and the low friction coefficient in the steady stage, and the wear rate of the irradiated samples decreased in the order: electron irradiation>proton irradiation>combined irradiation. - Highlights: • Proton irradiation induced more extensive changes in structure and friction behavior than electron irradiation. • The effect of combined irradiation was less than that of the sum of electron and proton irradiation. • Three forms of irradiations all induced the high initial friction coefficient and the low steady-stage friction coefficient. • The initial friction stage means a fast-wearing adhesive process while the steady-state of the system is a three-body abrasion

  9. Detection of defects in electron-irradiated synthetic silica quartz probed by positron annihilation

    International Nuclear Information System (INIS)

    Watauchi, Satoshi; Uedono, Akira; Ujihira, Yusuke; Yoda, Osamu.

    1994-01-01

    Defects in amorphous SiO 2 films, formed on MOS(metal/oxide/semiconductor) devices as gates, perturb its operation. The positron annihilation techniques, were applied to the study of the annealing behavior of the defects, introduced in the high purity synthetic quartz glass by the irradiation of 3-MeV electrons up to the 1x10 18 e - /cm 2 dosage. It was proved that the positron annihilation techniques were sufficiently sensitive to detect the defects in the electron-irradiated silica glasses. Three types of open-space defects were detected by the positron lifetime measurements. These can be attributed to monovacancy or divacancy type defects, vacancy clusters, and open-volume defects. A high formation probability (∼90%) of positroniums(Ps) was found in unirradiated specimens. These Ps were considered to be formed in open-volume defects. The formation probability of Ps was drastically decreased by the electron irradiation. But the size of open-volume defects was kept unchanged by the irradiation. These facts suggest that vacancy-type defects were introduced by the electron irradiation and that positrons were trapped in these defects. By the isochronal annealing in nitrogen atmosphere, the lifetime component (τ 2 ) and its relative intensity (I 2 ), attributed to positrons trapped in monovacancy or divacancy type defects and annihilated there, changed remarkably. τ 2 was constant in the temperature range up to 300degC, getting slightly shorter between 300degC and 700degC, and constant above 700degC. I 2 decreased gradually up to 300degC, constant between 300degC and 550degC, decreased above 550degC, and constant above 700degC. This revealed that the behavior of the defects, in which positrons were trapped, change by the elevation of the annealing temperature. (author)

  10. Annihilation characteristics in as-grown and electron irradiated Zn II-VI semiconductors

    International Nuclear Information System (INIS)

    Moser, P.; La Cruz, R.M. de; Pareja, R.

    1991-01-01

    The temperature dependence of the positron lifetime has been investigated in as-grown crystals of Zns, ZnSe and ZnTe over the temperature range 8-320 K. Also, isochronal annealing experiments up to 1175 K have been performed on these crystals. Zns and ZnSe crystals have been electron irradiated at room temperature and at 77 K. From the results in as-grown and annealed crystals, the values of (230±3), (240±5) and (266±3) ps are attributed to the positron lifetime in the bulk of Zns, ZnSe and ZnTe, respectively. 8 refs., 3 figs

  11. Electron irradiation-induced defects in ZnO studied by positron annihilation

    International Nuclear Information System (INIS)

    Chen, Z.Q.; Maekawa, M.; Kawasuso, A.; Sakai, S.; Naramoto, H.

    2006-01-01

    ZnO crystals were subjected to 3 MeV electron irradiation up to a high dose of 5.5x10 18 cm -2 . The production and recovery of vacancy defects were studied by positron annihilation spectroscopy. The increase of positron lifetime and Doppler broadening S parameter after irradiation indicates introduction of V Zn related defects. Most of these vacancies are annealed at temperatures below 200 o C. However, after annealing at around 400 o C, secondary defects are produced. All the vacancy defects are annealed out at around 700 o C

  12. /sup 57/Co Moessbauer study of the recovery process of electron-irradiated gold

    Energy Technology Data Exchange (ETDEWEB)

    Tanaka, I.; Nasu, S.; Fujita, F.E.

    1988-03-15

    The recovery process of Au--10-at. ppm-Co alloy after electron irradiation at 78 K was investigated by means of /sup 57/Co emission Moessbauer spectroscopy. Three satellite lines were observed and assigned to the small interstitial(I)--Co complexes, the micro-I-loops containing Co atoms and the divacancy-Co complexes, respectively. A fairly strong binding energy between the interstitial and Co atoms in small I-Co complexes, most probably larger than 0.2 eV, was deduced

  13. Defect reactions on the phosphorus sublattice in low-temperature electron-irradiated InP

    International Nuclear Information System (INIS)

    Sibille, A.; Suski, J.

    1985-01-01

    This Rapid Communication describes several thermally or electronically stimulated defect reactions involving the dominant deep centers in low-temperature (25--300 K) electron-irradiated InP. Some of these reactions result in an increased concentration of the centers, thereby revealing the existence of a secondary production mechanism of the related defects. Low-energy irradiations allows one to select the type of the ejected atom (P) and gives direct evidence that only a phosphorus species, interstitial or vacancy, is involved in the creation-reaction-annealing events

  14. Origin of the main deep electron trap in electron irradiated InP

    International Nuclear Information System (INIS)

    Sibille, A.

    1986-01-01

    The electrical activity and annealing behavior of the main electron trap in electron irradiated InP p + n junctions has been investigated. A very marked depth dependence of the annealing rate has been found. Moreover, this center apparently acts as if it were a deep donor, leading to an increase of carrier concentration on the n side. All these results are coherently interpreted with a model in terms of radiation defect D(P) (phosphorus interstitial or vacancy), residual shallow acceptor complexing, the final annealing resulting from a dissociation of the complex followed by a diffusion and either recapture or annihilation of D(P)

  15. Effect of electron irradiation on hatchability and broiler performance of hatching eggs

    International Nuclear Information System (INIS)

    Castaneda, S.M.P.; Tellez, I.G.; Sanchez, R.E.; Quintana, L.J.A.; Bustos, R.E.

    1996-01-01

    The irradiation of foods employs the electromagnetic ionizing energy, and the gamma ray, the X ray and the electrons are used. The electrons are reduced mass particles and have negative electric charge. The difference between the gamma rays, X-ray and electron is the penetration level. The effective range on penetration of electron accelerator depends on the energy level, in practice the penetation of an electron beam in the foods is 5 mm for MeV. The objectives of this work were to evaluate the effects of electron irradiation on the hatchability, and to evaluate the productive parameters of chicken hatching from egg irradiated with electrons. (author). 15 refs., 6 tabs

  16. ESR studies of electron irradiated K3Ir(CN)6 in KCl single crystals

    International Nuclear Information System (INIS)

    Vugman, N.V.; Pinhal, N.M.

    1983-01-01

    ESR studies of KCl single crystals doped with small amounts of K 3 Ir(CN) 6 and submitted to a prolongued 2 MeV electron irradiation at room temperature reveal the presence of the [IR(CN) 5 Cl] 4- and [Ir(CN) 4 Cl 2 ] 4- new molecular species. Ligand spin densities and ligand field parameters are calculated from the experimental hyperfine and superhyperfine interactions and compared to previous data on the [Ir(CN) 5 ] 4- species. (Author) [pt

  17. Efficient production of NV colour centres in nanodiamonds using high-energy electron irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Dantelle, G., E-mail: geraldine.dantelle@polytechnique.ed [Laboratoire de Physique Quantique et Moleculaire, ENS Cachan, 94 235 CACHAN Cedex (France); Laboratoire de Physique de la Matiere Condensee, Ecole Polytechnique, 91128 PALAISEAU Cedex (France); Slablab, A.; Rondin, L. [Laboratoire de Physique Quantique et Moleculaire, ENS Cachan, 94 235 CACHAN Cedex (France); Laine, F.; Carrel, F.; Bergonzo, Ph. [CEA-LIST, CEA/Saclay, 91 191 GIF-SUR-YVETTE Cedex (France); Perruchas, S.; Gacoin, T. [Laboratoire de Physique de la Matiere Condensee, Ecole Polytechnique, 91128 PALAISEAU Cedex (France); Treussart, F.; Roch, J.-F. [Laboratoire de Physique Quantique et Moleculaire, ENS Cachan, 94 235 CACHAN Cedex (France)

    2010-09-15

    Nanodiamond powders with an average size of 50 nm have been irradiated using high-energy electron beam. After annealing and chemical treatment, nanodiamond colloidal solutions were obtained and deposited on silica coverslips by spin-coating. The fluorescence of nanodiamonds was studied by confocal microscopy together with atomic force microscopy. We evaluated the proportion of luminescent nanodiamonds as a function of the irradiation duration and showed that large quantities, exceeding hundreds of mg, of luminescent nanodiamonds can be produced within 1 h of electron irradiation.

  18. Efficient production of NV colour centres in nanodiamonds using high-energy electron irradiation

    International Nuclear Information System (INIS)

    Dantelle, G.; Slablab, A.; Rondin, L.; Laine, F.; Carrel, F.; Bergonzo, Ph.; Perruchas, S.; Gacoin, T.; Treussart, F.; Roch, J.-F.

    2010-01-01

    Nanodiamond powders with an average size of 50 nm have been irradiated using high-energy electron beam. After annealing and chemical treatment, nanodiamond colloidal solutions were obtained and deposited on silica coverslips by spin-coating. The fluorescence of nanodiamonds was studied by confocal microscopy together with atomic force microscopy. We evaluated the proportion of luminescent nanodiamonds as a function of the irradiation duration and showed that large quantities, exceeding hundreds of mg, of luminescent nanodiamonds can be produced within 1 h of electron irradiation.

  19. Fractal model of polarization switching kinetics in ferroelectrics under nonequilibrium conditions of electron irradiation

    Science.gov (United States)

    Maslovskaya, A. G.; Barabash, T. K.

    2018-03-01

    The paper presents the results of the fractal and multifractal analysis of polarization switching current in ferroelectrics under electron irradiation, which allows statistical memory effects to be estimated at dynamics of domain structure. The mathematical model of formation of electron beam-induced polarization current in ferroelectrics was suggested taking into account the fractal nature of domain structure dynamics. In order to realize the model the computational scheme was constructed using the numerical solution approximation of fractional differential equation. Evidences of electron beam-induced polarization switching process in ferroelectrics were specified at a variation of control model parameters.

  20. Annihilation characteristics in As-grown and electron irradiated Zn II-VI semiconductors

    International Nuclear Information System (INIS)

    Cruz, R.M. de la; Pareja, R.; Moser, P.

    1992-01-01

    The temperature dependence of the positron lifetime has been investigated in as-grown crystals of ZnS, ZnSe and ZnTe over the temperature range 8-320 K. Also, isochronal annealing experiments up to 1175 K have been performed on these crystals. ZnS and ZnSe crystals have been electron irradiated at room temperature and at 77 K. From the results in as-grown and annealed crystals, the values of (230±3), (240±5) and (266±3) ps are attributed to the positron lifetime in the bulk of ZnS, ZnSe and ZnTe, respectively

  1. Effect of electron irradiation on the surface properties of Ge-Si single crystals

    International Nuclear Information System (INIS)

    Bakirov, M.Ya.; Ibragimov, N.I.

    1998-01-01

    It is established that by electron irradiation of the Ge 1-x Si x (x = 0 - 0.15) monocrystals with the dose of ≤ 10 13 cm -2 the concentration of the surface charged centers N t does not change. Some drop in the N t value with tendency to saturation is observed by increase in the dose. The speed of the surface recombination also grows with tendency to saturation. Monotonous growth of the surface recombination is identified by increase in dislocations density [ru

  2. Electron irradiation-induced defects in ZnO studied by positron annihilation

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Z.Q. [Advanced Science Research Center, Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)]. E-mail: zhiquanchen@hotmail.com; Maekawa, M. [Advanced Science Research Center, Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Kawasuso, A. [Advanced Science Research Center, Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Sakai, S. [Advanced Science Research Center, Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Naramoto, H. [Advanced Science Research Center, Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)

    2006-04-01

    ZnO crystals were subjected to 3 MeV electron irradiation up to a high dose of 5.5x10{sup 18} cm{sup -2}. The production and recovery of vacancy defects were studied by positron annihilation spectroscopy. The increase of positron lifetime and Doppler broadening S parameter after irradiation indicates introduction of V {sub Zn} related defects. Most of these vacancies are annealed at temperatures below 200 {sup o}C. However, after annealing at around 400 {sup o}C, secondary defects are produced. All the vacancy defects are annealed out at around 700 {sup o}C.

  3. Zinc vacancy and oxygen interstitial in ZnO revealed by sequential annealing and electron irradiation

    Science.gov (United States)

    Knutsen, K. E.; Galeckas, A.; Zubiaga, A.; Tuomisto, F.; Farlow, G. C.; Svensson, B. G.; Kuznetsov, A. Yu.

    2012-09-01

    By combining results from positron annihilation and photoluminescence spectroscopy with data from Hall effect measurements, the characteristic deep level emission centered at ˜1.75 eV and exhibiting an activation energy of thermal quenching of 11.5 meV is associated with the zinc vacancy. Further, a strong indication that oxygen interstitials act as a dominating acceptor is derived from the analysis of charge carrier losses induced by electron irradiation with variable energy below and above the threshold for Zn-atom displacement. We also demonstrate that the commonly observed green emission is related to an extrinsic acceptorlike impurity, which may be readily passivated by oxygen vacancies.

  4. Defects in CdSe thin films, induced by high energy electron irradiation

    International Nuclear Information System (INIS)

    Ion, L.; Antohe, S.; Tutuc, D.; Antohe, V.A.; Tazlaoanu, C.

    2004-01-01

    Defects induced in CdSe thin films by high energy electron irradiation are investigated by means of thermally stimulated currents (TSC) spectroscopy. Films were obtained by vacuum deposition from a single source and irradiated with a 5 x 10 13 electrons/cm 2 s -1 beam of 6-MeV energy. It was found that electrical properties of the films are controlled by a deep donor state, located at 0.38 eV below the bottom edge of the conduction band. Parameters of the traps responsible for the recorded TSC peaks were determined. (authors)

  5. Subthreshold displacement damage in copper--aluminum alloys during electron irradiation

    International Nuclear Information System (INIS)

    Drosd, R.; Kosel, T.; Washburn, J.

    1976-12-01

    During electron irradiation at low energies which results in a negligible damage rate in a pure material, lighter solute atoms are displaced, which may in turn indirectly displace solvent atoms by a focussed replacement collision or an interstitial diffusion jump. The extent to which lighter solute atoms contribute to the subthreshold damage rate has been examined by irradiating copper--aluminum alloys at high temperatures in a high voltage electron microscope. The damage rate, as measured by monitoring the growth rate of dislocation loops, at 300 kV was found to increase linearly with the aluminum concentration

  6. Preliminary examination of induced radio activity in pepper by 10 MeV electron irradiation

    International Nuclear Information System (INIS)

    Furuta, Masakazu; Katayama, Tadashi; Ito, Norio; Mizohata, Akira; Matsunami, Tadao; Toratani, Hirokazu; Takeda, Atsuhiko

    1989-01-01

    β-ray measurement was performed on 10 MeV electron-irradiated black pepper and white pepper in order to reconfirm the wholesomeness of irradiated food and present unambiguous data to general consumers concerning about the induced radioactivity in the irradiated foods. From elemental composition of the samples and investigation of photonuclear reactions, several β-emmitters were listed up. But no radioactivity other than from natural sources was detected in the irradiated sample by β-ray counting with 2 π gass flow counter, suggesting that the induced β-emmitters in the irradiated sample was below the detection limit of its induced radioactivity. (author)

  7. Preliminary examination of induced radioactivity in pepper by 10 MeV electron irradiation

    International Nuclear Information System (INIS)

    Katayama, Tadashi; Furuta, Masakazu; Sibata, Setsuko; Ito, Norio; Mizohata, Akira; Matsunami, Tadao; Toratani, Hirokazu; Takeda, Atsuhiko.

    1991-01-01

    β-ray measurement was performed on 10 MeV electron-irradiated black pepper and white pepper with liquid scintillation counter in order to reconfirm the wholesomeness of irradiated foods and present unambiguous data to general consumers concerning about the induced radioactivity in the irradiated foods. In irradiated black pepper no radioactivity other than from natural source, un-irradiated one, was detected. But in irradiated white pepper, it was suggested that induced radioactivity might be detected if the detection method was more improved. (author)

  8. Electron irradiation effects in amorphous antimony thin films obtained by cluster-beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Fuchs, G.; Treilleux, M.; Santos Aires, F.; Cabaud, B.; Melinon, P.; Hoareau, A. (Lyon-1 Univ., 69 - Villeurbanne (France))

    1991-03-01

    In order to understand the differences existing between films obtained with a classical molecular beam deposition (MBD) and the new low-energy cluster beam deposition (LECBD), transmission electron microscopy has been used to characterize the first stages of antimony LECBD. Antimony deposits are discontinuous and amorphous up to 2 nm in thickness. They are formed with isolated amorphous antimony particles surrounded by an amorphous antimony oxide shell. Moreover, under electron beam exposure in the microscope, an amorphous-crystal transformation has been observed in the oxide shell. Electron irradiation induces the formation of a crystallized antimony oxide (Sb{sub 2}O{sub 3}) around the amorphous antimony core. (author).

  9. Effects of radiation damage on the silicon lattice

    Science.gov (United States)

    Dumas, Katherine A.; Lowry, Lynn; Russo, O. Louis

    1987-01-01

    Silicon was irradiated with both proton and electron particle beams in order to investigate changes in the structural and optical properties of the lattice as a result of the radiation damage. Lattice expansions occurred when large strain fields (+0.34 percent) developed after 1- and 3-MeV proton bombardment. The strain was a factor of three less after 1-MeV electron irradiation. Average increases of approximately 22 meV in the 3.46-eV interband energy gap and 14 meV in the Lorentz broadening parameter were measured after the electron irradiation.

  10. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.; Peters, Craig; Brongersma, Mark; Cui, Yi; McGehee, Mike

    2010-01-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  11. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.

    2010-06-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  12. The dose penumbra of a custom-made shield used in hemibody skin electron irradiation.

    Science.gov (United States)

    Rivers, Charlotte I; AlDahlawi, Ismail; Wang, Iris Z; Singh, Anurag K; Podgorsak, Matthew B

    2016-11-08

    We report our technique for hemibody skin electron irradiation with a custom-made plywood shield. The technique is similar to our clinical total skin electron irradiation (TSEI), performed with a six-pair dual field (Stanford technique) at an extended source-to-skin distance (SSD) of 377 cm, with the addition of a plywood shield placed at 50 cm from the patient. The shield is made of three layers of stan-dard 5/8'' thick plywood (total thickness of 4.75 cm) that are clamped securely on an adjustable-height stand. Gafchromic EBT3 films were used in assessing the shield's transmission factor and the extent of the dose penumbra region for two different shield-phantom gaps. The shield transmission factor was found to be about 10%. The width of the penumbra (80%-to-20% dose falloff) was measured to be 12 cm for a 50 cm shield-phantom gap, and reduced slightly to 10 cm for a 35 cm shield-phantom gap. In vivo dosimetry of a real case confirmed the expected shielded area dose. © 2016 The Authors.

  13. Improved calculation of displacements per atom cross section in solids by gamma and electron irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Piñera, Ibrahin, E-mail: ipinera@ceaden.edu.cu [Centro de Aplicaciones Tecnológicas y Desarrollo Nuclear, CEADEN, 30 St. 502, Playa 11300, Havana (Cuba); Cruz, Carlos M.; Leyva, Antonio; Abreu, Yamiel; Cabal, Ana E. [Centro de Aplicaciones Tecnológicas y Desarrollo Nuclear, CEADEN, 30 St. 502, Playa 11300, Havana (Cuba); Espen, Piet Van; Remortel, Nick Van [University of Antwerp, CGB, Groenenborgerlaan 171, 2020 Antwerpen (Belgium)

    2014-11-15

    Highlights: • We present a calculation procedure for dpa cross section in solids under irradiation. • Improvement about 10–90% for the gamma irradiation induced dpa cross section. • Improvement about 5–50% for the electron irradiation induced dpa cross section. • More precise results (20–70%) for thin samples irradiated with electrons. - Abstract: Several authors had estimated the displacements per atom cross sections under different approximations and models, including most of the main gamma- and electron-material interaction processes. These previous works used numerical approximation formulas which are applicable for limited energy ranges. We proposed the Monte Carlo assisted Classical Method (MCCM), which relates the established theories about atom displacements to the electron and positron secondary fluence distributions calculated from the Monte Carlo simulation. In this study the MCCM procedure is adapted in order to estimate the displacements per atom cross sections for gamma and electron irradiation. The results obtained through this procedure are compared with previous theoretical calculations. An improvement in about 10–90% for the gamma irradiation induced dpa cross section is observed in our results on regard to the previous evaluations for the studied incident energies. On the other hand, the dpa cross section values produced by irradiation with electrons are improved by our calculations in about 5–50% when compared with the theoretical approximations. When thin samples are irradiated with electrons, more precise results are obtained through the MCCM (in about 20–70%) with respect to the previous studies.

  14. Study of point defect mobilities in zirconium during electron irradiation in a HVEM

    International Nuclear Information System (INIS)

    Griffiths, M.

    1993-01-01

    A high voltage electron microscope (HVEM) was used to investigate the nature of intrinsic point defects in α-Zr by direct observation of dislocation climb and cavity growth or shrinkage. The material used was Marz-grade Zr that had been pre-irradiated with neutrons at about 740 K in the Dounreay Fast Reactor. Dislocation loops of vacancy character that had been produced during the neutron irradiation were studied by further irradiation with electrons in the HVEM. Growth of the loops was observed at temperatures as low as 230 K, indicating that, under the conditions of the experiment, some vacancy-type defects were mobile in the temperature regime 230 K-300 K. The nature of these defects is unknown. One possibility is that these defects are not intrinsic in nature, but may be vacancy-Fe complexes. In addition to the climb of dislocation loops, c-component network dislocations and cavities were also studied. Basal plane climb of the network dislocations was observed at 573 K, but was not readily apparent at 320 K. This suggests that preferred climb planes (and possibly loop habit planes) are sensitive to temperature. Cavities that were already in the foil after neutron irradiation or were induced by electron irradiation grew along the c-axis and shrank along a-directions during electron irradiation. This radiation-induced shape change of the cavities strongly suggests the existence of a diffusional anisotropy difference between interstitials and vacancies in α-Zr. (Author) 14 figs., 22 refs

  15. Improving the reverse recovery of power MOSFET integral diodes by electron irradiation

    International Nuclear Information System (INIS)

    Baliga, B.J.; Walden, J.P.

    1983-01-01

    Using 3 MeV electron irradiation at room temperature it was found that the reverse recovery charge in the integral diode could be continuously reduced in a well controlled manner from over 500nC to less than 100nC without any significant increase in the forward voltage drop of the integral diode under typical operating peak currents. The reverse recovery time was also observed to decrease from 3 microseconds to less than 200 nsec when the radiation dose was increased from 0 to 16 Megarads. The damage produced in gate oxide of the MOSFET due to the electron radiation damage was found to cause an undesirable decrease in the gate threshold voltage. This resulted in excessive channel leakage current flow in the MOSFET at zero gate bias. It was found that this channel leakage current was substantially reduced by annealing the devices at 140 0 C without influencing the integral diode reverse recovery speed. Thus, the electron irradiation technique was found to be effective in controlling the integral diode reverse recovery characteristics without any degradation of the power MOSFET characteristics. (author)

  16. Influence of Electron Irradiation Factor on Haruan Traditional Extract (HTE) for Oral Drug Delivery

    International Nuclear Information System (INIS)

    Ibrahim Ijang; Abdul Manan, M.J.; Kamaruddin Hashim

    2014-01-01

    Haruan or Channa striatus is source of protein, Haruan extract is well known in the region for having a medicinal quality and widely consumed. It is great advantage if this product could be administered by oral rather than injection because oral route of drug delivery is still preferred by the vast majority of patients. However protein and peptides can be denatured or degraded by conditions included the acidic pH of the stomach and presence of endogenous enzymes. In order to protect or prevent digestion and degradation of the protein in the stomach and to ensure the protein reach to gastro intestinal (GI) tract, CMS nano gel system was developed using electron irradiation method. However stability of HTE toward radiation needed to be ensured before being used for the next level. In this study, the HTE was radiated with electron radiation. Its stability was analysed in term of physical aspect by looking at the colour difference, melting point by using Differential Scanning Calorimetry (DSC) and in terms of chemical aspect which include molecular bonds by using Fourier Transform Infrared (FTIR). The results of this study were that no apparent colour difference was seen on the HTE before and after irradiation. Those are supported by FTIR and DSC analysis results that showed that there were no change of molecular bonds and melting point, compared between no irradiation and irradiation HTE during electron irradiation up to 10 kGy. Statistically the test showed no significant difference at p<0.005 within melting temperatures. (author)

  17. Growth rate of dislocation loop in Fe-Ni-Cr alloy under Kr+ ion and electron irradiation

    International Nuclear Information System (INIS)

    Kimoto, T.; Allen, C.W.; Rehn, L.E.

    1991-10-01

    In order to examine the effect of irradiating particle species on the growth rate of radiation-induced dislocation loops, a solution-annealed Fe-25Ni-15Cr-0.02C alloy was irradiated at 723 K first by 1.5 MeV Kr + ions for 2520 sec, then by 1.5 MeV Kr + ions and 1.0 MeV electrons simultaneously for 780 sec, and finally by 1.0 MeV electrons for 780 sec with the HVEM-Tandem Facility in Argonne National Laboratory. The calculated damage rate by 1.5 MeV Kr + ions was 5.8 x 10 -4 dpa/s, and that by 1.0 MeV electrons was 1 x 10 -4 dpa/s. The growth rate of a dislocation loop located at the center of the specimen was 7 x 10 -3 nm/s for the Kr + ion irradiation, 4 x 10 -2 nm/s for the simultaneous Kr + and electron irradiation, and (2--3) x 10 -2 nm/s for the electron irradiation. This implies that the electron irradiation is about 19 times more effective in the growth of radiation-induced dislocation loops than the Kr + ion irradiation. The dislocation loop growth rate under the simultaneous Kr + and electron irradiation is higher than the sum of the growth rates under the individual Kr + and electron irradiations. 5 refs., 4 figs

  18. Effects of electron irradiation in space environment on thermal and mechanical properties of carbon fiber/bismaleimide composite

    International Nuclear Information System (INIS)

    Yu, Qi; Chen, Ping; Gao, Yu; Ma, Keming; Lu, Chun; Xiong, Xuhai

    2014-01-01

    Highlights: •Electron irradiation decreased the storage modulus finally. •T g decreased first and then increased and finally decreased. •The thermal stability was reduced and then improved and finally decreased. •The changing trend of flexural strength and ILSS are consistent. -- Abstract: The effects of electron irradiation in simulated space environment on thermal and mechanical properties of high performance carbon fiber/bismaleimide composites were investigated. The dynamic mechanical properties of the composites exposed to different fluences of electron irradiation were evaluated by Dynamic mechanical analysis (DMA). Thermogravimetric analysis was applied to investigate the changes in thermal stability of the resin matrix after exposure to electron irradiation. The changes in mechanical properties of the composites were evaluated by flexural strength and interlaminar shear strength (ILSS). The results indicated that electron irradiation in high vacuum had an impact on thermal and mechanical properties of CF/BMI composites, which depends on irradiation fluence. At lower irradiation fluences less than 5 × 10 15 cm −2 , the dynamic storage modulus, cross-linking degree, thermal stability and mechanical properties that were determined by a competing effect between chain scission and cross-linking process, decreased firstly and then increased. While at higher fluences beyond 5 × 10 15 cm −2 , the chain scission process was dominant and thus led to the degradation in thermal and mechanical properties of the composites

  19. H2 formation by electron irradiation of SBA-15 materials and the effect of Cu(II) grafting

    International Nuclear Information System (INIS)

    Brodie-Linder, N.; Le Caer, S.; Shahdo Alam, M.; Renault, J.P.; Alba-Simionesco, Ch.

    2010-01-01

    Measurement of H 2 production from electron irradiation (10 MeV) on SBA-15 materials has shown that adsorbed water is attacked preferentially. Silanol groups are only attacked when they are in the majority with respect to adsorbed water, however they are much less efficient at producing H 2 . The comparison between water content before and after electron irradiation and the corresponding H 2 production indicates that water desorption is the main route to adsorbed water loss for SBA-15 materials. On the other hand, surface silanol groups are more susceptible to attack,leading to H 2 production when SBA-15 samples have undergone extensive thermal treatment. Electron irradiation of SBA-15-Cu materials has shown that the presence of Cu(II) on the surface reduces and inhibits the production of H 2 . This inhibiting power affects adsorbed water bonded to grafted copper but not surface silanol groups. (authors)

  20. Electron irradiation effect on the reverse phase transformation temperatures in TiNi shape memory alloy thin films

    International Nuclear Information System (INIS)

    Wang, Z.G.; Zu, X.T.; Fu, Y.Q.; Zhu, S.; Wang, L.M.

    2005-01-01

    In this work, Ti-Ni shape memory alloy thin films were irradiated by 1.7 MeV electron with three types of fluences: 4 x 10 20 , 7 x 10 20 and 1 x 10 21 /m 2 . The influence of electron irradiation on the transformation behavior of the TiNi thin films were investigated by differential scanning calorimetry. The transformation temperatures A s and A f shifted to higher temperature after electron irradiation, the martensite was stabilized. The electron irradiation effect can be easily eliminated by one thermal cycle. The shifts of the transformation temperatures can be explained from the change of potential energy barrier and coherency energy between parent phase and martensite after irradiation

  1. Model of deep centers formation and reactions in electron irradiated InP

    International Nuclear Information System (INIS)

    Sibille, A.; Suski, J.; Gilleron, M.

    1986-01-01

    We present a model of the production of deep centers and their reactions following electron irradiations in InP. We propose that the dominant hole traps in p-InP and electron traps in p + n InP junctions are complexes between shallow acceptors and a common intrinsic entity, the phosphorus interstitial or vacancy. The reactions observed below and above room temperature are then due to a local mobility of this entity, which can be obtained as well by thermal as by electronic stimulation of the reactions. This model implies the long-range migration (at least down to 16 K) of this entity, and explains the strongly different behavior of n-InP compared to p-InP samples

  2. Energy and orientation dependence of electron-irradiation-induced defects in InP

    International Nuclear Information System (INIS)

    Sibille, A.; Suski, J.; LeRoux, G.

    1984-01-01

    The concentration of several electron-irradiation-induced deep defect levels in InP has been measured by deep-level transient spectroscopy (DLTS) as a function of electron energy. The dominant centers exhibit a threshold at about 100 keV, which clearly points to a primary production event by electron--phosphorus-atom collision. This unambiguous determination allowed a test of the recently proposed orientation dependence technique to find the nature of the sublattice involved in the collision process for III-V compounds. A good quantitative agreement is obtained with a hard-sphere model for secondary collisions if disorientation of the beam in the sample is taken into account. Other traps exhibit higher thresholds which correspond either to indium-atom displacements or to the involvement of secondary collisions in the production event

  3. Radiation damage in uranium under electron irradiation of energies up to 20 MeV

    International Nuclear Information System (INIS)

    Emets, N.L.; Zelenskij, V.F.; Kuz'menko, V.A.; Ranyuk, Yu.N.; Reznichenko, Eh.A.; Shilyaev, B.A.; Yamnitskij, V.A.

    1980-01-01

    The problem of conservation of primary radiation-induced defects in uranium irradiated by electrons with the energy exceeding photo fission threshold is considered. Calculation of uranium burnout is carried out. Calculations are conducted by the method of mathematical simulation, using some nuclear models; development of electromagnetic cascade in uranium, photofission process, elastic and inelastic electron scattering, as well as some secondary processes are taken into account. Proved is the fact of anomalous growth of uranium under electron irradiation, registered earlier experimentally. It is shown, that in case of acquiring the value Ed=15 eV radiation uranium growth at low levels of burnout can be explained by the complete capture of all the primary radiationn-induced defects into dislocation loops [ru

  4. Structural and Optical Changes of Poly-Vinylidene Fluoride by Electron Irradiation at High Dose Rate

    International Nuclear Information System (INIS)

    Jaleh, B.; Fakhri, P.; Borhani, M.; Habibi, S.; Noroozi, M.

    2012-01-01

    Poly-vinylidene fluoride films were prepared and irradiated by 10MeV electrons at different doses ranging from 50 to 300kGy with a dose rate of 10kGy/s. The FTIR results indicated that no major phase content change was observed. The optical absorption spectra indicated that the electron irradiation results in shifting of the absorption peak, appearance of a new peak and increasing the band gap (Eg). These changes may be due to the breaking of polymer chains and creation of new defects. The X-ray diffraction analysis of samples indicated that the crystallinity did not show any major changes. Concerning the gel fraction measurements, it was observed that gel fraction increases with increasing the dose, where it is an indication of the formation of cross-linked films.

  5. Evaluation of induced radioactivity in 10 MeV-Electron irradiated spices, (2)

    International Nuclear Information System (INIS)

    Katayama, Tadashi; Furuta, Masakazu; Shibata, Setsuko; Matsunami, Tadao; Ito, Norio; Mizohata, Akira; Toratani, Hirokazu; Takeda, Atsuhiko.

    1994-01-01

    In order to check radioactivity of beta-emmitters produced by (γ, n) reactions which could occur at energies up to 10 MeV, black pepper, white pepper, red pepper, ginger and turmeric were irradiated with 10 MeV electron from a linear accelerator to a dose of 100 kGy. Beta-rays were counted using a 2π gas flow counter and a liquid scintillation counter. Any induced radioactivity could not be detected in irradiated samples. When inorganic compounds containing the nuclides in the list were artificially added in the samples and were irradiated, the β-activities were detected. From the amount of observed radioactivities of β-emmitters produced in the compounds as photonuclear products, it is concluded that the induced radioactivity in natural samples by 10 MeV-electron irradiation were far smaller than natural radioactivity from 40 K contained in the samples and, hence, its biological effects should be negligible. (author)

  6. Evaluation of induced radioactivity in 10 MeV-electron irradiated spices, (1)

    International Nuclear Information System (INIS)

    Furuta, Masakazu; Katayama, Tadashi; Ito, Norio; Mizohata, Akira; Matsunami, Tadao; Shibata, Setsuko; Toratani, Hirokazu; Takeda, Atsuhiko.

    1994-01-01

    Black pepper, white pepper, red pepper, ginger and turmeric were irradiated with 10 MeV electrons from a linear accelerator to a dose of 100 kGy and radioactivity was measured in order to estimate induced radioactivity in the irradiated foods. Induced radioactivity could not be detected significantly by γ-ray spectrometry in the irradiated samples except for spiked samples which contain some photonuclear target nuclides in the list of photonuclear reactions which could produce radioactivity below 10 MeV. From the amount of observed radioactivities of short-lived photonuclear products in the spiked samples and calculation of H 50 according to ICRP Publication 30, it was concluded that the induced radioactivity and its biological effects in the 10 MeV electron-irradiated natural samples were negligible in comparison with natural radioactivity from 40 K contained in the samples. (author)

  7. Interstitial loop growth in electron irradiated vacuum-remelted FV448

    International Nuclear Information System (INIS)

    Buswell, J.T.; Fisher, S.B.

    1979-05-01

    An investigation of the resistance to void swelling of the ferritic steel FV448 has been made in electron irradiation experiments in a High Voltage Electron Microscope. Overaged samples of vacuum-remelted FV448 showed zero swelling after irradiation to doses of up to 30 dpa, in the temperature range 400 to 550 0 C. The resistance to void swelling was due to the absence of mutual interaction between interstitial loops. Impurity segregation to the loops, and precipitation, prevented continuous dislocation climb, thus removing biased sinks from the system at low doses. An interstitial-impurity binding energy of 0.5 eV was measured, suggesting that the impurity responsible was carbon or nitrogen. Some effects attributable to the heating of thin foils in the HVEM environment were detected. (author)

  8. A study of point defects created by electron irradiation of dilute iron-carbon alloys

    International Nuclear Information System (INIS)

    Leveque, J.L.

    1969-10-01

    Resistivity and magnetic after effect (m.a.e.) measurements are used to study the influence of carbon atoms on the annealing process of point defects created by electron irradiation (3 MeV) at low temperature (20 deg. K). The presence of the carbon atoms has a strong influence on the recovery sub-stage I E and stage III. For the former, the carbon impurity traps the freely migrating iron interstitial. For the latter the effect is interpreted as being due to formation during annealing, of a carbon vacancy pair. A pronounced m.a.e. band is attributed to the reorientation of this carbon vacancy complex. All these results are coherent with the interpretation of a low temperature migrating free interstitial. (author) [fr

  9. Electron beam influence on the carbon contamination of electron irradiated hydroxyapatite thin films

    International Nuclear Information System (INIS)

    Hristu, Radu; Stanciu, Stefan G.; Tranca, Denis E.; Stanciu, George A.

    2015-01-01

    Highlights: • Carbon contamination mechanisms of electron-beam-irradiated hydroxyapatite. • Atomic force microscopy phase imaging used to detect carbon contamination. • Carbon contamination dependence on electron energy, irradiation time, beam current. • Simulation of backscattered electrons confirms the experimental results. - Abstract: Electron beam irradiation which is considered a reliable method for tailoring the surface charge of hydroxyapatite is hindered by carbon contamination. Separating the effects of the carbon contamination from those of irradiation-induced trapped charge is important for a wide range of biological applications. In this work we focus on the understanding of the electron-beam-induced carbon contamination with special emphasis on the influence of the electron irradiation parameters on this phenomenon. Phase imaging in atomic force microscopy is used to evaluate the influence of electron energy, beam current and irradiation time on the shape and size of the resulted contamination patterns. Different processes involved in the carbon contamination of hydroxyapatite are discussed

  10. Magnetic circular dichroism study of electron-irradiation induced defects in InP

    International Nuclear Information System (INIS)

    Gislason, H.P.

    1989-01-01

    A strong magnetic circular dichroism (MCD) absorption band centered at 1.07 eV in electron irradiated InP is reported. Temperature and magnetic field dependence of the signal reveal that the centre giving rise to this band is a spin triplet. By simulating neutral and reverse bias conditions of junction measurements through a careful choice of irradiation dose and starting material, the MCD band is shown to have an annealing behaviour closely resembling that of the majority carrier traps which control the Fermi level position in n- and p-type InP. The 1.07 eV MCD band represents the first magneto-optical signal connected with this family of complex irradiation-induced defects in InP. (author) 19 refs., 5 figs., 1 tab

  11. Interface-mediated amorphization of coesite by 200 keV electron irradiation

    International Nuclear Information System (INIS)

    Gong, W.L.; Wang, L.M.; Ewing, R.C.; Xie, H.S.

    1997-01-01

    Electron-induced amorphization of coesite was studied as a function of irradiation temperature by in situ transmission electron microscopy at an incident energy of 200 keV. Electron-induced amorphization of coesite is induced by an ionization mechanism and is mainly dominated by an interface-mediated, heterogeneous nucleation-and-growth controlled process. Amorphous domains nucleate at surfaces, crystalline-amorphous (c-a) interfaces, and grain boundaries. This is the same process as the interface-mediated vitrification of coesite by isothermal annealing above the thermodynamic melting temperature (875 K), but below the glass transition temperature (1480 K). The interface-mediated amorphization of coesite by electron irradiation is morphologically similar to interface-mediated thermodynamic melting. copyright 1997 American Institute of Physics

  12. Short circuit current changes in electron irradiated GaAlAs/GaAs solar cells

    Science.gov (United States)

    Walker, G. H.; Conway, E. J.

    1978-01-01

    Heteroface p-GaAlAs/p-GaAs/n-GaAs solar cells with junction depths of 0.8, 1.5, and 4 microns were irradiated with 1 MeV electrons. The short-circuit current for the 4 micron junction depth cells is significantly reduced by the electron irradiation. Reduction of the junction depth to 1.5 microns improves the electron radiation resistance of the cells while further reduction of the junction depth to 0.8 microns improves the stability of the cells even more. Primary degradation is in the blue region of the spectrum. Considerable recovery of lost response is obtained by annealing the cells at 200 C. Computer modeling shows that the degradation is caused primarily by a reduction in the minority carrier diffusion length in the p-GaAs.

  13. Positron annihilation lifetime measurement of electron-irradiated ZnO crystals

    International Nuclear Information System (INIS)

    Tomiyama, N.; Takenaka, M.; Kuramoto, E.

    1992-01-01

    In order to clarify the basic properties of radiation-induced defects in ZnO crystals positron annihilation lifetime measurements were performed for the ZnO crystals irradiated by 28 MeV electrons at 77 K. The electron-irradiation induced the color change of the specimens from the original yellowish-white to the orange and long lifetime component of about 200 psec. The isochronal annealing experiments showed that the decrease of the positron annihilation lifetime appeared in the temperature range between 423 and 473 K and between 723 and 923 K. The radiation-induced color change disappeared in the first temperature range. It can be considered that the first stage corresponds to migration and recovery of radiation-induced oxygen vacancies. It is difficult to identify the second stage, but it might be the recovery stage of small ZnO interstitial clusters formed through clustering of Zn and O interstitials

  14. Simulating Neutron Radiation Damage of Graphite by In-situ Electron Irradiation

    International Nuclear Information System (INIS)

    Mironov, Brindusa E; Freeman, H M; Brydson, R M D; Westwood, A V K; Scott, A J

    2014-01-01

    Radiation damage in nuclear grade graphite has been investigated using transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS). Changes in the structure on the atomic scale and chemical bonding, and the relationship between each were of particular interest. TEM was used to study damage in nuclear grade graphite on the atomic scale following 1.92×10 8 electrons nm −2 of electron beam exposure. During these experiments EELS spectra were also collected periodically to record changes in chemical bonding and structural disorder, by analysing the changes of the carbon K-edge. Image analysis software from the 'PyroMaN' research group provides further information, based on (002) fringe analysis. The software was applied to the micrographs of electron irradiated virgin 'Pile Grade A' (PGA) graphite to quantify the extent of damage from electron beam exposure

  15. Effect of electron-irradiation on the free volume of PEEK studied by positron annihilation

    International Nuclear Information System (INIS)

    Kobayashi, Y.; Haraya, K.; Hattori, S.; Sasuga, T.

    1994-01-01

    A good linear correlation was found between the size of a cavity where ortho-positronium (o-Ps) annihilates by the pick-off mechanism and the total free volume of molecular liquids and polymers. Based on the correlation, the free volume of poly(aryl ether-ether ketone) (PEEK) was evaluated as a function of electron irradiation dose and the result was compared with that obtained from gas diffusivity measurements. It was found that the effect of irradiation on the free volume of PEEK was rather small; the free volume was decreased only by a few percent (relative value) when the samples were irradiated with a dose of 50 MGy in air. ((orig.))

  16. Analysis of electron-irradiated poly-ether ether ketone by X-ray photoelectron spectroscopy

    International Nuclear Information System (INIS)

    Oyabu, Matashige; Kobayashi, Yoshinori; Seguchi, Tadao; Sasuga, Tsuneo; Kudoh, Hisaaki.

    1995-01-01

    Organic polymers used in atomic power plants or space are damaged by ionizing irradiation. Radicals produced by irradiation cause oxidation, chain scission and crosslinking, all of which lead to degradation of the material. In this paper, the surface of electron-irradiated poly-ether ether ketone (PEEK) was studied by X-ray photoelectron spectroscopy (XPS). The irradiation in air was found to oxidize the PEEK surface producing carboxyl groups, the content of which dependant on the dose. Carboxyl groups were not produced in helium gas. Quantitative spectral analysis indicated that the aromatic structure might be decomposed. Some comparison was made between the semicrystalline and amorphous samples. The oxygen content resulting from irradiation, of semicrystalline PEEK increased more than that of amorphous PEEK. (author)

  17. Vacancy defects in electron irradiated RPV steels studied by positron lifetime

    Energy Technology Data Exchange (ETDEWEB)

    Moser, P; Li, X H [CEA Centre d` Etudes de Grenoble, 38 (France). Dept. de Recherche Fondamentale sur la Matiere Condensee; Akamatsu, M; Van Duysen, J C [Electricite de France (EDF), 77 - Ecuelles (France)

    1994-12-31

    Specimens of French RPV (reactor pressure vessels) steels at different rates of segregation have been irradiated at 150 and 288 deg C with 3 MeV electrons (irradiation dose: 4*10{sup 19} e-/cm{sup 2}). Vacancy defects are studied by positron lifetime measurements before and after irradiation and at each step of isochronal annealing. After 150 deg C irradiation, a recovery step is observed in both specimens, for annealing treatments in the range 220-370 deg C and is attributed to the dissociation of vacancy-impurity complexes. The size of vacancy clusters never overcome 10 empty atomic volumes. If ``fresh`` dislocations are created just before irradiation, big vacancy clusters could be formed. After 288 deg C irradiation, small vacancy cluster of 4-10 empty atomic volumes are observed. (authors). 3 figs., 7 refs.

  18. Kinetics of radiation-induced structural alterations in electron-irradiated polymer-based composites

    International Nuclear Information System (INIS)

    Zaikin, Yu.A.; Potanin, A.S.; Koztaeva, U.P.

    2002-01-01

    Complete text of publication follows. In our previous studies measurements of internal friction temperature dependence were used for characterization of thermally activated and radiation-induced structural evolution in different types of polymer-based composites. This paper supplements these measurements with kinetic studies of internal friction (IF) parameters and EPR signals in a glass-cloth epoxy-filled laminate ST-ETF after electron irradiation up to doses of 1-10 MGy. Experiment have shown that the lifetime of free radicals in this composite considerably exceeds the characteristic time of molecular structural rearrangement due to scission and cross-linking after irradiation, as determined from IF measurements. This result is explained by slow proceeding of sterically hindered disproportionation reactions that stabilize the end groups of the macro-chain disrupt during irradiation and finally fix the act of scission. A mathematical model is formulated for description of structural evolution and alterations of IF parameters in polymer-based composites during and after electron irradiation. The description is based on the track model of radiation damage in polymers and phenomenological theory of radiation-induced structural transformations. General description does not give details of radiation-chemical conversion in different structural components of composites but indicates the direction of their structural evolution. In the model considered a composite material was divided into three parts (binder, filler, and a boundary layer). It was supposed that after primary distribution of radiation energy radiation-chemical conversion proceeds independently in each of these regions. It was also suggested that all the radical reactions were of the second order. On the example of glass-cloth laminate ST-ETF it is shown that this model allows to describe alterations in composite structural characteristics during irradiation and in the course of their self-organization after

  19. Impact of silver metallization and electron irradiation on the mechanical deformation of polyimide films

    Science.gov (United States)

    Muradov, A. D.; Mukashev, K. M.; Yar-Mukhamedova, G. Sh.; Korobova, N. E.

    2017-11-01

    The impact of silver metallization and electron irradiation on the physical and mechanical properties of polyimide films has been studied. The metal that impregnated the structure of the polyimide substrate was 1-5 μm. The surface coatings contained 80-97% of the relative silver mirror in the visible and infrared regions. Irradiation was performed at the ELU-6 linear accelerator with an average beam electron energy of 2 MeV, an integral current of up to 1000 μA, a pulse repetition rate of 200 Hz, and a pulse duration of 5 μs. The absorbed dose in the samples was 10, 20, 30, and 40 MGy. The samples were deformed at room temperature under uniaxial tension on an Instron 5982 universal testing system. The structural changes in the composite materials that result from the impact of the physical factors were studied using an X-ray diffractometer DRON-2M in air at 293 K using Cu K α radiation (λαCu = 1.5418 Å). A substantial growth of mechanical characteristics resulting from the film metallization, as compared to the pure film, was observed. The growth of the ultimate strength by Δσ = 105 MPa and the plasticity by Δɛ = 75% is connected with the characteristics of the change of structure of the metallized films and the chemical etching conditions. The electron irradiation of the metallized polyimide film worsens its elastic and strength characteristics due to the formation of new phases in the form of silver oxide in the coating. The concentration of these phases increased with increasing dose, which was also the result of the violation of the ordered material structure, namely, the rupture of polyimide macromolecule bonds and the formation of new phases of silver in the coating. A mathematical model was obtained that predicts the elastic properties of silver metallized polyimide films. This model agrees with the experimental data.

  20. Electron irradiation effect of polyurethane using coincidence doppler-broadening spectroscopy

    International Nuclear Information System (INIS)

    Yang, D.J.; Zhang, J.D.; Leung, J.K.C.; Beling, C.D.; Liu, L.B.

    2006-01-01

    Full text: To understand the electron irradiation effects on polymer, polyether-urethane (ETPU) samples of 2m m in thickness and 1 0 m m in diameter were irradiated by a 1.8M eV electron beam with beam current of 3 ma at room temperature. The irradiated doses are 5 kGy, 10 kGy, 15 kGy, 30 kGy, 100 kGy and 150 kGy. ETPU was manufactured by mixing PTMG-100, TDI-100 and MOCA. The momentum density distributions (MMDs) of electrons taking part in the annihilation processes of positron-electron pairs in ETPU have been measured by coincidence Doppler-broadening spectroscopy (CDBS). By presenting the ratio of the counts in every channel of the measured CDB spectrum to the corresponding counts from a reference spectrum (pristine ETPU), we observed that the change in MMDs is not significant for doses lower than 10 kGy. However, high momentum part of MMDs exhibit an obvious decrease for dose exceeding 15 kGy and then slowly down to steady with doses until 150 kGy. This valley occurs at around 15 x1 0 3m οc and is well known as oxygen-specific, indicative of a less positron trapping by oxygen atoms in some samples of higher dose radiation. It is postulated that the radiation will break the crosslinkings, allowing the trace water and oxygen molecules to be released from the sample surface. Excess NCO groups in ETPU would crosslink with urethane and urea groups to produce allophanate and biuret groups. After receiving a certain amount of electron irradiation, crosslinked allophanate and biuret groups would produce degradation. Thus, residual water and oxygen trapped in ETPU by the crosslinking would diffuse out. However, the irradiation doses up to 150 kGy in this experiment are still not large enough to induce strong degradation of urethane and urea groups

  1. Organic n-type materials for charge transport and charge storage applications.

    Science.gov (United States)

    Stolar, Monika; Baumgartner, Thomas

    2013-06-21

    Conjugated materials have attracted much attention toward applications in organic electronics in recent years. These organic species offer many advantages as potential replacement for conventional materials (i.e., silicon and metals) in terms of cheap fabrication and environmentally benign devices. While p-type (electron-donating or hole-conducting) materials have been extensively reviewed and researched, their counterpart n-type (electron-accepting or electron-conducting) materials have seen much less popularity despite the greater need for improvement. In addition to developing efficient charge transport materials, it is equally important to provide a means of charge storage, where energy can be used on an on-demand basis. This perspective is focused on discussing a selection of representative n-type materials and the efforts toward improving their charge-transport efficiencies. Additionally, this perspective will also highlight recent organic materials for battery components and the efforts that have been made to improve their environmental appeal.

  2. Minimising contralateral breast dose in post-mastectomy intensity-modulated radiotherapy by incorporating conformal electron irradiation

    NARCIS (Netherlands)

    van der Laan, Hans Paul; Korevaar, Erik W; Dolsma, Willemtje; Maduro, John H; Langendijk, Johannes A

    PURPOSE: To assess the potential benefit of incorporating conformal electron irradiation in intensity-modulated radiotherapy (IMRT) for loco-regional post-mastectomy RT. PATIENTS AND METHODS: Ten consecutive patients that underwent left-sided mastectomy were selected for this comparative planning

  3. Dislocation Loops with a Burgers Vector Produced by 1 MeV Electron Irradiation in FCC Copper-Nickel

    DEFF Research Database (Denmark)

    Leffers, Torben; Barlow, P.

    1975-01-01

    Dislocation loops with Burgers vector a are formed in Cu-Ni alloys during 1 MeV electron irradiation in a high-voltage electron microscope at 350°-400°C. The dislocation loops are of interstitial type and pure edge in character with line vectors. Some of the loops are seen to dissociate into loop...

  4. Stability of radicals in electron-irradiated fluoropolymer film for the preparation of graft copolymer fuel cell electrolyte membranes

    DEFF Research Database (Denmark)

    Larsen, Mikkel Juul; Ma, Yue; Qian, Huan

    This presentation concerns the stability of radicals generated in poly(ethylene-alt-tetra­fluoro­ethylene) (ETFE) film by electron irradiation prior to grafting of styrene onto this base material. It has been demonstrated that the grafting yield decreases as the storage time of the irradiated fil...

  5. Effect of Variation of Silicon Nitride Passivation Layer on Electron Irradiated Aluminum Gallium Nitride/Gallium Nitride HEMT Structures

    Science.gov (United States)

    2014-06-19

    family have (0001) interfaces which bear a surface charge σ0 that results from the polarizations of the two alloys at the interface...function of the Al content of the AlGaN barrier, as well as its thickness (Kocan, 2003; Lenka and Panda , 2011). In my dissertation, the surface...incorporation.” Applied Physics Letters, 71 (1997): 1359. Lenka, T. R., and Panda , A. K.. “Effect of structural parameters of 2DEG and C~V

  6. Porous Silicon Nanowires

    Science.gov (United States)

    Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng

    2011-01-01

    In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999

  7. Fluorescence and thermoluminescence in silicon oxide films rich in silicon

    International Nuclear Information System (INIS)

    Berman M, D.; Piters, T. M.; Aceves M, M.; Berriel V, L. R.; Luna L, J. A.

    2009-10-01

    In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 Ω-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N 2 at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

  8. Free volume modifications in chalcone chromophore doped PMMA films by electron irradiation: Positron annihilation study

    Science.gov (United States)

    Ismayil; Ravindrachary, V.; Praveena, S. D.; Mahesha, M. G.

    2018-03-01

    The free volume related fluorescence behaviour in electron beam irradiated chalcone chromophore doped Poly(methyl methacrylate) (PMMA) composite films have been studied using FTIR, UV-Visible, XRD and Positron Annihilation techniques. From the FTIR spectral study it is found that the formation of polarons and bipolaron takes place due to cross linking as well as chain scission processes at lower and higher doses respectively. It reveals that the formation of various polaronic defect levels upon irradiation is responsible for the creation of three optical energy band gaps within the polymer films as obtained from UV-Visible spectra. The crosslinking process at lower doses increases the distance between the pendant groups to reduce the interchain distance and chain scission process at higher doses decreases interchain separation to enhance the number of polarons in the polymer composites as suggested by XRD studies. The fluorescence studies show the enhancement of fluorescence emission at lower doses and reduction at higher doses under electron irradiation. The positron annihilation study suggests that the low radiation doses induce crosslinking which affect the free volume properties and in turn hinders the chalcone molecular rotation within the polymer composite. At higher doses chain scission process support polymer matrix relaxation and facilitates non-radiative transition of the chromophore upon excitation. This study shows that fluorescence enhancement and mobility of chromophore within the polymer matrix is directly related to the free volume around it.

  9. Radiation damage studies on natural and synthetic rock salt utilizing measurements made during electron irradiation

    International Nuclear Information System (INIS)

    Swyler, K.J.; Levy, P.W.

    1977-01-01

    The numerous radiation damage effects which will occur in the rock salt surrounding radioactive waste disposal canisters are being investigated with unique apparatus for making optical and other measurements during 1 to 3 MeV electron irradiation. This equipment, consists of a computer controlled double beam spectrophotometer which simultaneously records 256 point absorption and radioluminescence spectra, in either the 200 to 400 or 400 to 800 nm region, every 40 seconds. Most often the measurements commence as the irradiation is started and continue after it is terminated. This procedure provides information on the kinetics and other details of the damage formation process and, when the irradiation is terminated, on both the transient and stable damage components. The exposure rates may be varied between 10 2 or 10 3 to more than 10 8 rad per hour and the sample temperature maintained between 25 and 800 or 900 0 C. Although this project was started recently, measurements have been made on synthetic NaCl and on natural rock salt from two disposal sites and two mines. Both unstrained and purposely strained samples have been used. Most recently, measurements at temperatures between 25 and 200 0 C have been started. The few measurements completed to date indicate that the damage formation kinetics in natural rock salt are quite different from those observed in synthetic NaCl

  10. Pathogens Inactivated by Low-Energy-Electron Irradiation Maintain Antigenic Properties and Induce Protective Immune Responses

    Science.gov (United States)

    Fertey, Jasmin; Bayer, Lea; Grunwald, Thomas; Pohl, Alexandra; Beckmann, Jana; Gotzmann, Gaby; Casado, Javier Portillo; Schönfelder, Jessy; Rögner, Frank-Holm; Wetzel, Christiane; Thoma, Martin; Bailer, Susanne M.; Hiller, Ekkehard; Rupp, Steffen; Ulbert, Sebastian

    2016-01-01

    Inactivated vaccines are commonly produced by incubating pathogens with chemicals such as formaldehyde or β-propiolactone. This is a time-consuming process, the inactivation efficiency displays high variability and extensive downstream procedures are often required. Moreover, application of chemicals alters the antigenic components of the viruses or bacteria, resulting in reduced antibody specificity and therefore stimulation of a less effective immune response. An alternative method for inactivation of pathogens is ionizing radiation. It acts very fast and predominantly damages nucleic acids, conserving most of the antigenic structures. However, currently used irradiation technologies (mostly gamma-rays and high energy electrons) require large and complex shielding constructions to protect the environment from radioactivity or X-rays generated during the process. This excludes them from direct integration into biological production facilities. Here, low-energy electron irradiation (LEEI) is presented as an alternative inactivation method for pathogens in liquid solutions. LEEI can be used in normal laboratories, including good manufacturing practice (GMP)- or high biosafety level (BSL)-environments, as only minor shielding is necessary. We show that LEEI efficiently inactivates different viruses (influenza A (H3N8), porcine reproductive and respiratory syndrome virus (PRRSV), equine herpesvirus 1 (EHV-1)) and bacteria (Escherichia coli) and maintains their antigenicity. Moreover, LEEI-inactivated influenza A viruses elicit protective immune responses in animals, as analyzed by virus neutralization assays and viral load determination upon challenge. These results have implications for novel ways of developing and manufacturing inactivated vaccines with improved efficacy. PMID:27886076

  11. Defect structures in YBa2Cu3O/sub 7-x/ produced by electron irradiation

    International Nuclear Information System (INIS)

    Kirk, M.A.; Baker, M.C.; Liu, J.Z.; Lam, D.J.; Weber, H.W.

    1987-12-01

    Defect structures in YBa 2 Cu 3 O/sub 7-x/ produced by electron irradiation at 300 0 K were investigated by transmission electron microscopy. Threshold energies for the production of visible defects were determined to be 152 keV and 131 keV (+- 7 keV) in directions near the a and b (b > a) axes (both perpendicular to c, the long axis in the orthorhombic structure), respectively. During above threshold irradiations in an electron flux of 3 x 10 18 cm -2 s -1 , extended defects were observed to form and grow to sizes of 10 to 50 nm over 1000 s in material thicknesses 20 to 200 nm. Such low electron threshold energies suggest oxygen atom displacements with recoil energies near 20 eV. The observation of movement of twin boundaries during irradiation just above threshold suggests movement of the basal plane oxygen atoms by direct displacement or defect migration processes. Crystals irradiated above threshold were observed after about 24 hours to have transformed to a structure heavily faulted on planes perpendicular to the c axis. 3 refs., 3 figs

  12. Evaluation of induced radioactivity in 10 MeV electron-irradiated spices

    Energy Technology Data Exchange (ETDEWEB)

    Furuta, Masakazu; Ito, Norio; Mizohata, Akira; Matsunami, Tadao; Katayama, Tadashi; Toratani, Hirokazu (Osaka Prefectural Univ., Sakai (Japan). Research Inst. for Advanced Science and Technology); Takeda, Atsuhiko

    1993-10-01

    In order to make clear appreciation to induced radioactivity in the irradiated foods, photonuclear reactions which could produce radioactivity at energies up to 10 MeV were listed up from elemental compositions of black pepper, white pepper, red pepper, ginger and turmeric. The samples were irradiated with 10 MeV electron from a linear accelerator to a dose of 100 kGy and radioactivity was measured. Induced radioactivity could not be detected significantly by gamma-ray spectrometry and beta-ray counting in the irradiated samples except for spiked samples which contain some photonuclear target nuclides in the list. From the amount of observed radioactivities of short-lived photonuclear products in the spiked samples and calculation of H[sub 50] according to ICRP Publication 30, it was concluded that the induced radioactivity and its biological effects in the 10 MeV electron-irradiated natural samples were negligible in comparison with natural radioactivity from [sup 40]K contained in the samples. (J.P.N.).

  13. A 20 keV electron gun system for the electron irradiation experiments

    International Nuclear Information System (INIS)

    Mahapatra, S.K.; Dhole, S.D.; Bhoraskar, V.N.

    2005-01-01

    An electron gun consisting of cathode, focusing electrode, control electrode and anode has been designed and fabricated for the electron irradiation experiments. This electron gun can provide electrons of any energy over the range 1-20 keV, with current upto 50 μA. This electron gun and a Faraday cup are mounted in the cylindrical chamber. The samples are fixed on the Faraday cup and irradiated with electrons at a pressure ∼10 -7 mbar. The special features of this electron gun system are that, at any electron energy above 1 keV, the electron beam diameter can be varied from 5 to 120 mm on the Faraday cup mounted at a distance of 200 mm from the anode in the chamber. The variation in the electron current over the beam spot of 120 mm diameter is less than 15% and the beam current stability is better than 5%. This system is being used for studying the irradiation effects of 1-20 keV energy electrons on the space quality materials in which the irradiation time may vary from a few tens of seconds to hours

  14. ACPSEM ROSG TBE working group recommendations for quality assurance in total body electron irradiation

    International Nuclear Information System (INIS)

    Nelligan, Raelene; Baldwin, Zoe; Ostwald, Trish; Tran, Thi; Bailey, Michael

    2015-01-01

    The Australasian College of Physical Scientists and Engineers in Medicine (ACPSEM) Radiation Oncology Specialty Group (ROSG) formed a series of working groups in 2011 to develop recommendations for guidance of radiation oncology medical physics practice within the Australasian setting. These recommendations are intended to provide guidance for safe work practices and a suitable level of quality control without detailed work instructions. It is the responsibility of the medical physicist to ensure that locally available equipment and procedures are sufficiently sensitive to establish compliance to these recommendations. The recommendations are endorsed by the ROSG, and have been subject to independent expert reviews. For the Australian readers, these recommendations should be read in conjunction with the Tripartite Radiation Oncology Reform Implementation Committee Quality Working Group: Radiation Oncology Practice Standards (2011), and Radiation Oncology Practice Standards Supplementary Guide (2011). This publication presents the recommendations of the ACPSEM ROSG Total Body Electron Irradiation Working Group and has been developed in alignment with other international associations. However, these recommendations should be read in conjunction with relevant national, state or territory legislation and local requirements, which take precedence over the ACPSEM recommendations. It is hoped that the users of this and other ACPSEM recommendations will contribute to the development of future versions through the Radiation Oncology Specialty Group of the ACPSEM. This document serves as a guideline for calibration and quality assurance of equipment used for TBE in Australasia.

  15. Effect of self-interstitial diffusion anisotropy in electron-irradiated zirconium: A cluster dynamics modeling

    International Nuclear Information System (INIS)

    Christien, F.; Barbu, A.

    2005-01-01

    A model based on the cluster dynamics approach was proposed in [A. Hardouin Duparc, C. Moingeon, N. Smetniansky-de-Grande, A. Barbu, J. Nucl. Mater. 302 (2002) 143] to describe point defect agglomeration in metals under irradiation. This model is restricted to materials where point defect diffusion is isotropic and is thus not applicable to anisotropic metals such as zirconium. Following the approach proposed by Woo [C.H. Woo, J. Nucl. Mater. 159 (1988) 237], we extended in this work the model to the case where self-interstitial atoms (SIA) diffusion is anisotropic. The model was then applied to the loop microstructure evolution of a zirconium thin foil irradiated with electrons in a high-voltage microscope. First, the inputs were validated by comparing the numerical results with Hellio et al. experimental results [C. Hellio, C.H. de Novion, L. Boulanger, J. Nucl. Mater. 159 (1988) 368]. Further calculations were made to evidence the effect of the thin foil orientation on the dislocation loop microstructure under irradiation. The result is that it is possible to reproduce for certain orientations the 'unexpected' vacancy loop growth experimentally observed in electron-irradiated zirconium [M. Griffiths, M.H. Loretto, R.E. Sallmann, J. Nucl. Mater. 115 (1983) 313; J. Nucl. Mater. 115 (1983) 323; Philos. Mag. A 49 (1984) 613]. This effect is directly linked to SIA diffusion anisotropy

  16. A 20 keV electron gun system for the electron irradiation experiments

    Energy Technology Data Exchange (ETDEWEB)

    Mahapatra, S.K. [Department of Physics, University of Pune, Pune 411007 (India); Dhole, S.D. [Department of Physics, University of Pune, Pune 411007 (India); Bhoraskar, V.N. [Department of Physics, University of Pune, Pune 411007 (India)]. E-mail: vnb@physics.unipune.ernet.in

    2005-01-01

    An electron gun consisting of cathode, focusing electrode, control electrode and anode has been designed and fabricated for the electron irradiation experiments. This electron gun can provide electrons of any energy over the range 1-20 keV, with current upto 50 {mu}A. This electron gun and a Faraday cup are mounted in the cylindrical chamber. The samples are fixed on the Faraday cup and irradiated with electrons at a pressure {approx}10{sup -7} mbar. The special features of this electron gun system are that, at any electron energy above 1 keV, the electron beam diameter can be varied from 5 to 120 mm on the Faraday cup mounted at a distance of 200 mm from the anode in the chamber. The variation in the electron current over the beam spot of 120 mm diameter is less than 15% and the beam current stability is better than 5%. This system is being used for studying the irradiation effects of 1-20 keV energy electrons on the space quality materials in which the irradiation time may vary from a few tens of seconds to hours.

  17. Ultrastructural changes following electron irradiation in three-dimensional culture of normal human dermal fibroblasts

    International Nuclear Information System (INIS)

    Han, Chunmao; Ishikura, Naotaka; Tsukada, Sadao

    1994-01-01

    The present study was designed to examine the effect of electron irradiation on fibroblasts and extracellular matrices electron-microscopically. The three-dimensional dermal fibroblast culture was exposed to one, 4 or 10 Gy of electron beams. One day after irradiation, fibroblasts were vacuolated in all irradiated groups and intercellular spaces were increased in a dose-dependent manner. Seven days later, intercellular spaces became dense in both one and 4 Gy groups, although they were still extremely increased in the 10 Gy group. The remaining fibroblasts were still activated in all groups. Thirty days after irradiation, myofibroblastic cells were scarcely observed, but extracellular fine fibrils and collagen fibrils were observed in all irradiated groups. The other ultrastructural findings were similar to those in the control group. In conclusion, electron beams damaged not only cells but also extracellular matrix. The extracellular matrix may be repaired by activated residual fibroblasts, resulting in the mixture of new and old collagen fibrils having different diamters. (N.K.)

  18. Radiation induced coloring of glasses measured during and after electron irradiation

    International Nuclear Information System (INIS)

    Swyler, K.J.; Hardy, W.H. II; Levy, P.W.

    1975-01-01

    The growth of color centers during irradiation, and the decay after irradiation, were studied in two glasses using recently developed equipment for making optical absorption and luminescence measurements during and after electron irradiation. The glasses studied were NBS 710, a soda-lime silicate glass, and NBS 711, a lead silicate glass. Both glasses exhibit similar coloring characteristics. The radiation-induced absorption spectra consists of a weak gaussian shaped band in the visible, a stronger gaussian band in the ultraviolet, and a band edge ''shift'' which may be accurately approximated by a third gaussian band. For all absorption bands, the color center vs dose (or irradiation time) curves can be accurately resolved into two saturating exponential and one linear component. The decay curves obtained after the irradiation is terminated can be accurately expressed by three exponential components. Coloring and decay curves made at different dose rates indicate that the processes responsible for decay after irradiation and electron hole recombination during irradiation play important roles in determining the rate and extent of coloring. Results are qualitatively in agreement with some very simple kinetic treatments for color center formation. In some, but not all, respects the quantitative agreement is also good. Lastly, the results indicate that it is necessary to make measurements during irradiation to establish the formation kinetics of color centers that are unstable at the bombardment temperature. (U.S.)

  19. Analysis of radiation damage to Si solar cells under high-fluence electron irradiation

    International Nuclear Information System (INIS)

    Yamaguchi, Masafumi; Taylor, S.J.; Yang, Ming-Ju; Matsuda, Sumio; Kawasaki, Osamu; Hisamatsu, Tadashi.

    1996-01-01

    Radiation testing of Si n + -p-p + space solar cells has revealed an anomalous increase in short-circuit current I sc , followed by an abrupt decrease and cell failure, induced by high-fluence (>10 16 cm -2 ) electron irradiation. A model which can be used to explain these phenomena by expressing the change in majority-carrier concentration p of the base region as a function of the electron fluence has been proposed in addition to the well-known model in which I sc is decreased due to minority-carrier lifetime reduction with irradiation. The reduction in p due to majority-carrier trapping by radiation-induced defects has two effects; one is broadening of the depletion layer which contributes to the increase in the generated photocurrent and that in the recombination-generation current in the depletion layer, and the second is an increase in the resistivity of the base layer resulting in an abrupt decrease of I sc and failure of the solar cells. (author)

  20. Experience with Exacin ointment for erosive dermatitis arising after X-ray and electron irradiation

    International Nuclear Information System (INIS)

    Suzuki, Yoshihiko

    1995-01-01

    An ointment containing Exacin (isepamicin sulfate) was used to prevent infection in 12 female patients with erosive (acute) or chronic dermatitis caused by X-ray and electron irradiation. Underlying diseases were skin metastasis from breast cancer (n=3), advanced cervical cancer (n=3), positive margin of cervical cancer (n=2), vaginal cancer (n=2), recurrence of rectal cancer (n=one), and vulvar cancer (n=one). Exacin ointment (a daily dose of approximately 6 g) was applied in two or more divided doses to lesions in the vulva (n=9), axillary chest wall (n=one), and chest wall (n=2) for 16-65 days in the group of erosive radiodermatitis (n=10) and for 3-10 months in the group of chronic radiodermatitis (n=2). In the group of erosive radiodermatitis, 8 were evaluated as remarkably improved; in the group of chronic radiodermatitis, one was evaluated as slightly improved and one as unchanged. Exacin ointment was considered to be effective for erosive dermatitis to prevent infection. (N.K.)

  1. Electron irradiation effects in YBa2Cu3O/sub 7-δ/ single crystals

    International Nuclear Information System (INIS)

    Kirk, M.A.; Baker, M.C.; Liu, J.Z.; Lam, D.J.; Weber, H.W.

    1988-04-01

    Defect structures in YBa 2 Cu 3 O/sub 7/minus/δ/ produced by electron irradiation at 300/degree/K, were investigated by transmission electron microscopy. Threshold energies for the production of visible defects were determined to b 152 keV and 131 keV (+- 7 keV) in directions near the a- and b-axes, respectively (b > a, both perpendicular to c, the long axis in the orthorhombic structure). During above-threshold irradiations in an electron flux of 3 x 10 18 cm/sup /minus/2/s/sup /minus/1/, extended defects were observed to form and grow to sizes of 10--50 nm over 15 minutes, in material thicknesses varying between 20 and 200 nm. Upon irradiation between the a- and b-thresholds, movement of twin plane boundaries and shrinkage of twinned volume were observed. All these findings suggest oxygen atom displacements in the basal plane with recoil energies near 20 eV. Above-threshold irradiations also show the collapse of c-axis long-range order into a planar faulted defect structure with short range order peaks at 1.2 c and 1.07 c, depending on the irradiation direction. 9 refs., 4 figs

  2. Fabrication of Octahedral Gold Nanoparticle embedded Polymer Pattern based on Electron Irradiation and Thermal Treatment

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Yong Nam; Lee, Hyeok Moo; Cho, Sung Oh [Korea Advanced Institute of Science and Technology, Daejeon (Korea, Republic of)

    2011-05-15

    Noble metal nanoparticles (NPs) such as gold (Au), silver, and copper have been a hot research issue due to their unique optical, electronic, and catalytic properties. On account of the size- and shape- dependent properties of the noble metal NPs, most researches are concentrated on tailoring sizes and shapes of the noble metal NPs. In particular, noble metal NPs with Platonic shapes such as tetrahedron, cube, octahedron, dodecahedron, and icosahedron have significant impact on a variety of applications including surface-enhancement spectroscopy, biochemical sensing, and nanodevice fabrication because sharp corners of the metals lead to high local electric-field enhancement. In addition, patterning or controlled assembly of noble metal NPs is indispensible for biological sensors, micro-/nano-electronic devices, photonic and photovoltaic devices, and surface-enhanced Raman scattering (SERS)-active substrates. Although Platonic noble metal NPs with well defined sizes have been intensively studied, patterning of Platonic noble metal NPs has been rarely demonstrated. Here, we present a strategy to fabricate patterned Au nano-octahedra embedded polymer films by selectively irradiating an electron beam onto HAuCl{sub 4}-loadaed poly(styrene-b-2-vinyl pyridine) (PS-b-P2VP) block copolymer (BCP) precursor films followed by thermal treatment. The BCP plays a important role for the patterning of the precursor film due to a cross-linking behavior under electron irradiation

  3. Effect of low energy electron irradiation on DNA damage by Cu{sup 2+} ion

    Energy Technology Data Exchange (ETDEWEB)

    Noh, Hyung Ah; Cho, Hyuck [Dept. of Physics, Chungnam National University, Daejeon (Korea, Republic of); Park, Yeun Soo [Plasma Technology Research Center, National Fusion Research Institute, Gunsan (Korea, Republic of)

    2017-03-15

    The combined effect of the low energy electron (LEE) irradiation and Cu{sup 2+} ion on DNA damage was investigated. Lyophilized pBR322 plasmid DNA films with various concentrations (1–15 mM) of Cu{sup 2+} ion were independently irradiated by monochromatic LEEs with 5 eV. The types of DNA damage, single strand break (SSB) and double strand break (DSB), were separated and quantified by gel electrophoresis. Without electron irradiation, DNA damage was slightly increased with increasing Cu ion concentration via Fenton reaction. LEE-induced DNA damage, with no Cu ion, was only 6.6% via dissociative electron attachment (DEA) process. However, DNA damage was significantly increased through the combined effect of LEE-irradiation and Cu ion, except around 9 mM Cu ion. The possible pathways of DNA damage for each of these different cases were suggested. The combined effect of LEE-irradiation and Cu ion is likely to cause increasing dissociation after elevated transient negative ion state, resulting in the enhanced DNA damage. For the decrease of DNA damage at around 9-mM Cu ion, it is assumed to be related to the structural stabilization due to DNA inter- and intra-crosslinks via Cu ion.

  4. Practical aspects of the pasteurization of sewage sludge by electron irradiation

    International Nuclear Information System (INIS)

    Tauber, M.; Hofmann, E.G.; Offermann, B.P.

    1975-01-01

    Recently the demand for disinfection of sewage sludge has increased. Investigations have shown that the radiation pasteurization of sludge is the most preferable treatment. Up to now most of these investigations have been made with 60 Co radiation sources. However, it is not easy to run an economic and safe process line for the irradiation of sewage sludge with such isotope sources. Powerful electron accelerators are now available and the main features of the irradiation of sewage sludge with fast electrons are discussed and the design parameters of such installations described. From the standpoint of the limited electron penetration into the material it is desirable to use high-energy electrons (up to 1.5 MeV) whereas from an economic standpoint it may be better to use electrons of lower energies (0.5 to 1 MeV) and to homogenize the sewage sludge to the required thickness. The following parameters must be considered for a commercial process line: effectivity of the electron radiation process; limited penetration of electrons into the material to be irradiated; beam power of electron accelerators required for sewage sludge treatment; safety aspects; economics of the process with regard to electron energy, power and homogenization of the material; and environmental aspects of the installations. The practical aspects of commercial process lines for electron irradiation of sewage sludge and the design of handling equipment are discussed in relation to these parameters. (author)

  5. Selfsupported epitaxial silicon films

    International Nuclear Information System (INIS)

    Lazarovici, D.; Popescu, A.

    1975-01-01

    The methods of removing the p or p + support of an n-type epitaxial silicon layer using electrochemical etching are described. So far, only n + -n junctions have been processed. The condition of anodic dissolution for some values of the support and layer resistivity are given. By this method very thin single crystal selfsupported targets of convenient areas can be obtained for channeling - blocking experiments

  6. Simulations for irradiation of silicon-based structures

    International Nuclear Information System (INIS)

    Sagatova, A.; Pavlovic, M.; Sedlackova, K.; Necas, V.; Hybler, P.; Zatko, B.

    2013-01-01

    The software ModePEB for modelling of electron beam processing in multilayer flat objects was shown to be a very useful tool for optimization of the irradiation of silicon based structures. Except its significant help in setting-up the accelerator parameters corresponding to a desired dose, its proven reliability and consistency with the measured data makes the ModePEB an inevitable instrument for design and optimization of electron irradiation experiments. (authors)

  7. Efficiency improvements by Metal Wrap Through technology for n-type Si solar cells and modules

    Energy Technology Data Exchange (ETDEWEB)

    Wenchao, Zhao; Jianming, Wang; Yanlong, Shen; Ziqian, Wang; Yingle, Chen; Shuquan, Tian; Zhiliang, Wan; Bo, Yu; Gaofei, Li; Zhiyan, Hu; Jingfeng, Xiong [Yingli Green Energy Holding Co., Ltd, 3399 North Chaoyang Avenue, Baoding (China); Guillevin, N.; Heurtault, B.; Aken, B.B. van; Bennett, I.J.; Geerligs, L.J.; Weeber, A.W.; Bultman, J.H. [ECN Solar Energy, Petten (Netherlands)

    2012-09-15

    N-type Metal Wrap Through (n-MWT) is presented as an industrially promising back-contact technology to reach high performance of silicon solar cells and modules. It can combine benefits from both n-type base and MWT metallization. In this paper, the efficiency improvements of commercial industrial n-type bifacial Si solar cells (239 cm{sup 2}) and modules (60 cells) by the integration of the MWT technique are described. For the cell, after the optimization of integration, over 0.3% absolute efficiency gain was achieved over the similar non-MWT technology, and Voc gain and Isc gain up to 0.9% and 3.5%, respectively. These gains are mainly attributed to reduced shading loss and surface recombination. Besides the front pattern optimization, a 0.1m{Omega} reduction of Rs in via part will induce further 0.06% absolute efficiency improvement. For the module part, a power output of n-MWT module up to 279W was achieved, corresponding to a module efficiency of about 17.7%.

  8. Complementary p- and n-type polymer doping for ambient stable graphene inverter.

    Science.gov (United States)

    Yun, Je Moon; Park, Seokhan; Hwang, Young Hwan; Lee, Eui-Sup; Maiti, Uday; Moon, Hanul; Kim, Bo-Hyun; Bae, Byeong-Soo; Kim, Yong-Hyun; Kim, Sang Ouk

    2014-01-28

    Graphene offers great promise to complement the inherent limitations of silicon electronics. To date, considerable research efforts have been devoted to complementary p- and n-type doping of graphene as a fundamental requirement for graphene-based electronics. Unfortunately, previous efforts suffer from undesired defect formation, poor controllability of doping level, and subtle environmental sensitivity. Here we present that graphene can be complementary p- and n-doped by simple polymer coating with different dipolar characteristics. Significantly, spontaneous vertical ordering of dipolar pyridine side groups of poly(4-vinylpyridine) at graphene surface can stabilize n-type doping at room-temperature ambient condition. The dipole field also enhances and balances the charge mobility by screening the impurity charge effect from the bottom substrate. We successfully demonstrate ambient stable inverters by integrating p- and n-type graphene transistors, which demonstrated clear voltage inversion with a gain of 0.17 at a 3.3 V input voltage. This straightforward polymer doping offers diverse opportunities for graphene-based electronics, including logic circuits, particularly in mechanically flexible form.

  9. Low energy electron irradiation induced carbon etching: Triggering carbon film reacting with oxygen from SiO{sub 2} substrate

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Cheng [Institute of Nanosurface Science and Engineering (INSE), Shenzhen University, Shenzhen 518060 (China); Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060 (China); Wang, Chao, E-mail: cwang367@szu.edu.cn, E-mail: dfdiao@szu.edu.cn; Diao, Dongfeng, E-mail: cwang367@szu.edu.cn, E-mail: dfdiao@szu.edu.cn [Institute of Nanosurface Science and Engineering (INSE), Shenzhen University, Shenzhen 518060 (China)

    2016-08-01

    We report low-energy (50–200 eV) electron irradiation induced etching of thin carbon films on a SiO{sub 2} substrate. The etching mechanism was interpreted that electron irradiation stimulated the dissociation of the carbon film and SiO{sub 2}, and then triggered the carbon film reacting with oxygen from the SiO{sub 2} substrate. A requirement for triggering the etching of the carbon film is that the incident electron penetrates through the whole carbon film, which is related to both irradiation energy and film thickness. This study provides a convenient electron-assisted etching with the precursor substrate, which sheds light on an efficient pathway to the fabrication of nanodevices and nanosurfaces.

  10. The effect of electron irradiation on the structure and iron speciation in sodium aluminum (iron) phosphate glasses

    Energy Technology Data Exchange (ETDEWEB)

    Stefanovsky, S.V., E-mail: serge.stefanovsky@yandex.ru [Frumkin Institute of Physical Chemistry and Electrochemistry RAS (Russian Federation); Presniakov, I.A.; Sobolev, A.V.; Glazkova, I.S. [Lomonosov Moscow State University, Department of Chemistry (Russian Federation); Kadyko, M.I.; Stefanovsky, O.I. [Frumkin Institute of Physical Chemistry and Electrochemistry RAS (Russian Federation)

    2016-08-01

    The effect of 8 MeV electron irradiation on the structure of glasses in the series 40 Na{sub 2}O, (20-x) Al{sub 2}O{sub 3}, x Fe{sub 2}O{sub 3}, 40 P{sub 2}O{sub 5} (mol.%) and on the iron speciation in these samples was studied by FTIR and Mössbauer spectroscopic techniques. Irradiation up to a dose of 1.0 MGy has no appreciable effects on the character of the bonds within anionic motif of the glass network. Electron irradiation increases the fraction of aluminum in octahedral coordination. Iron in both unirradiated and irradiated glasses is present mainly as Fe(III) (60–75% of the total amount) in the glasses and partly as Fe(II) and the ratio of two forms remains constant up to a dose of 1.0 MGy.

  11. Observation of magnetically anisotropic defects during stage I recovery in nickel after low-temperature electron irradiation

    International Nuclear Information System (INIS)

    Forsch, K.; Hemmerich, J.; Knoll, H.; Lucki, G.

    1974-01-01

    The measurement of defect-induced changes of magnetic anisotropy in a nickel single crystal after low-temperature electron irradiation was undertaken. A dynamic measuring method was used after reorienting a certain fraction of the radiation-induced defects in an external magnetic field of 5 kOe. In the temperature range of recovery stage I sub(C,D,E) (45 to 60 k) the crystallographic direction dependence of defect-induced anisotropy could be determined. The results show that in this temperature range the (100) split interstitial is mobile and able to reorient. The obtained data are further discussed with respect to existing information on magnetic after effect and resistivity annealing in electron-irradiated nickel

  12. Device intended for measurement of induced trapped charge in insulating materials under electron irradiation in a scanning electron microscope

    International Nuclear Information System (INIS)

    Belkorissat, R; Benramdane, N; Jbara, O; Rondot, S; Hadjadj, A; Belhaj, M

    2013-01-01

    A device for simultaneously measuring two currents (i.e. leakage and displacement currents) induced in insulating materials under electron irradiation has been built. The device, suitably mounted on the sample holder of a scanning electron microscope (SEM), allows a wider investigation of charging and discharging phenomena that take place in any type of insulator during its electron irradiation and to determine accurately the corresponding time constants. The measurement of displacement current is based on the principle of the image charge due to the electrostatic influence phenomena. We are reporting the basic concept and test results of the device that we have built using, among others, the finite element method for its calibration. This last method takes into account the specimen chamber geometry, the geometry of the device and the physical properties of the sample. In order to show the possibilities of the designed device, various applications under different experimental conditions are explored. (paper)

  13. Effect of additional minor elements on accumulation behavior of point defects under electron irradiation in austenitic stainless steels

    International Nuclear Information System (INIS)

    Sekio, Yoshihiro; Yamashita, Shinichiro; Takahashi, Heishichiro; Sakaguchi, Norihito

    2014-01-01

    Addition of minor elements to a base alloy is often applied with the aim of mitigating void swelling by decreasing the vacancy diffusivity and flux which influence vacancy accumulation behavior. However, the comparative evaluations of parameters, such as the diffusivity and flux, between a base alloy and modified alloys with specific additives have not been studied in detail. In this study, type 316 austenitic stainless steel as a base alloy and type 316 austenitic stainless steels modified with vanadium (V) or zirconium (Zr) additions were used to perform evaluations from the changes of widths of the void denuded zone (VDZ) formed near a random grain boundary during electron irradiation because these widths depend on vacancy diffusivity and flux. The formations of VDZs were observed in in-situ observations during electron irradiation at 723 K and the formed VDZ widths were measured from the transmission electron microscopic images after electron irradiation. As a result, the VDZs were formed in both steels without and with V, and respective widths were ∼119 and ∼100 nm. On the other hand, the VDZ formation was not observed clearly in the steel with Zr. From the measured VDZ widths in the steels without and with V addition, the estimated ratio of the vacancy diffusivity in the steel with V to that in the steel without V was about 0.50 and the estimated ratio of the vacancy flux in the steel with V to that in the steel without V was about 0.71. This result suggests that the effect of additional minor elements on vacancy accumulation behaviors under electron irradiation could be estimated from evaluations of the VDZ width changes among steels with and without minor elements. Especially, because void swelling is closely related with the vacancy diffusion process, the VDZ width changes would also be reflected on void swelling behavior. (author)

  14. Production of Sulfur Allotropes in Electron Irradiated Jupiter Trojans Ice Analogs

    Science.gov (United States)

    Mahjoub, Ahmed; Poston, Michael J.; Blacksberg, Jordana; Eiler, John M.; Brown, Michael E.; Ehlmann, Bethany L.; Hodyss, Robert; Hand, Kevin P.; Carlson, Robert; Choukroun, Mathieu

    2017-09-01

    In this paper, we investigate sulfur chemistry in laboratory analogs of Jupiter Trojans and Kuiper Belt Objects (KBOs). Electron irradiation experiments of CH3OH-NH3-H2O and H2S-CH3OH-NH3-H2O ices were conducted to better understand the chemical differences between primordial planetesimals inside and outside the sublimation line of H2S. The main goal of this work is to test the chemical plausibility of the hypothesis correlating the color bimodality in Jupiter Trojans with sulfur chemistry in the incipient solar system. Temperature programmed desorption (TPD) of the irradiated mixtures allows the detection of small sulfur allotropes (S3 and S4) after the irradiation of H2S containing ice mixtures. These small, red polymers are metastable and could polymerize further under thermal processing and irradiation, producing larger sulfur polymers (mainly S8) that are spectroscopically neutral at wavelengths above 500 nm. This transformation may affect the spectral reflectance of Jupiter Trojans in a different way compared to KBOs, thereby providing a useful framework for possibly differentiating and determining the formation and history of small bodies. Along with allotropes, we report the production of organo-sulfur molecules. Sulfur molecules produced in our experiment have been recently detected by Rosetta in the coma of 67P/Churyumov-Gerasimenko. The very weak absorption of sulfur polymers in the infrared range hampers their identification on Trojans and KBOs, but these allotropes strongly absorb light at UV and Visible wavelengths. This suggests that high signal-to-noise ratio UV-Vis spectra of these objects could provide new constraints on their presence.

  15. ELECTRON IRRADIATION AND THERMAL PROCESSING OF MIXED-ICES OF POTENTIAL RELEVANCE TO JUPITER TROJAN ASTEROIDS

    International Nuclear Information System (INIS)

    Mahjoub, Ahmed; Poston, Michael J.; Hand, Kevin P.; Hodyss, Robert; Blacksberg, Jordana; Carlson, Robert W.; Ehlmann, Bethany L.; Choukroun, Mathieu; Brown, Michael E.; Eiler, John M.

    2016-01-01

    In this work we explore the chemistry that occurs during the irradiation of ice mixtures on planetary surfaces, with the goal of linking the presence of specific chemical compounds to their formation locations in the solar system and subsequent processing by later migration inward. We focus on the outer solar system and the chemical differences for ice mixtures inside and outside the stability line for H 2 S. We perform a set of experiments to explore the hypothesis advanced by Wong and Brown that links the color bimodality in Jupiter's Trojans to the presence of H 2 S in the surface of their precursors. Non-thermal (10 keV electron irradiation) and thermally driven chemistry of CH 3 OH–NH 3 –H 2 O (“without H 2 S”) and H 2 S–CH 3 OH–NH 3 –H 2 O (“with H 2 S”) ices were examined. Mid-IR analyses of ice and mass spectrometry monitoring of the volatiles released during heating show a rich chemistry in both of the ice mixtures. The “with H 2 S” mixture experiment shows a rapid consumption of H 2 S molecules and production of OCS molecules after a few hours of irradiation. The heating of the irradiated “with H 2 S” mixture to temperatures above 120 K leads to the appearance of new infrared bands that we provisionally assign to SO 2 and CS. We show that radiolysis products are stable under the temperature and irradiation conditions of Jupiter Trojan asteroids. This makes them suitable target molecules for potential future missions as well as telescope observations with a high signal-to-noise ratio. We also suggest the consideration of sulfur chemistry in the theoretical modeling aimed at understanding the chemical composition of Trojans and KOBs

  16. Production of Sulfur Allotropes in Electron Irradiated Jupiter Trojans Ice Analogs

    Energy Technology Data Exchange (ETDEWEB)

    Mahjoub, Ahmed; Poston, Michael J.; Blacksberg, Jordana; Ehlmann, Bethany L.; Hodyss, Robert; Hand, Kevin P.; Carlson, Robert; Choukroun, Mathieu [Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109 (United States); Eiler, John M.; Brown, Michael E., E-mail: Mahjoub.Ahmed@jpl.nasa.gov [California Institute of Technology, Division of Geological and Planetary Sciences, Pasadena, CA 91125 (United States)

    2017-09-10

    In this paper, we investigate sulfur chemistry in laboratory analogs of Jupiter Trojans and Kuiper Belt Objects (KBOs). Electron irradiation experiments of CH{sub 3}OH–NH{sub 3}–H{sub 2}O and H{sub 2}S–CH{sub 3}OH–NH{sub 3}–H{sub 2}O ices were conducted to better understand the chemical differences between primordial planetesimals inside and outside the sublimation line of H{sub 2}S. The main goal of this work is to test the chemical plausibility of the hypothesis correlating the color bimodality in Jupiter Trojans with sulfur chemistry in the incipient solar system. Temperature programmed desorption (TPD) of the irradiated mixtures allows the detection of small sulfur allotropes (S{sub 3} and S{sub 4}) after the irradiation of H{sub 2}S containing ice mixtures. These small, red polymers are metastable and could polymerize further under thermal processing and irradiation, producing larger sulfur polymers (mainly S{sub 8}) that are spectroscopically neutral at wavelengths above 500 nm. This transformation may affect the spectral reflectance of Jupiter Trojans in a different way compared to KBOs, thereby providing a useful framework for possibly differentiating and determining the formation and history of small bodies. Along with allotropes, we report the production of organo-sulfur molecules. Sulfur molecules produced in our experiment have been recently detected by Rosetta in the coma of 67P/Churyumov–Gerasimenko. The very weak absorption of sulfur polymers in the infrared range hampers their identification on Trojans and KBOs, but these allotropes strongly absorb light at UV and Visible wavelengths. This suggests that high signal-to-noise ratio UV–Vis spectra of these objects could provide new constraints on their presence.

  17. Low-energy electron irradiation assisted diffusion of gold nanoparticles in polymer matrix

    International Nuclear Information System (INIS)

    Deore, Avinash V.; Bhoraskar, V.N.; Dhole, S.D.

    2014-01-01

    A simple and controllable method to synthesize nanoparticles in the surface region of polymers was used by low energy electron irradiation. Using this method, gold nanoparticles have been synthesized by irradiating gold coated PVA (Polyvinyl Alcohol) sheets. This method was easy in operation and even period of few minutes was sufficient to obtain the nanoparticles. The coatings (∼10 μm) made from a mixture of ethanol and HAuCl 4 on PVA sheets (∼150 μm) by simple drop cast method were irradiated with 30 keV electrons, at room temperature and 10 −6 mbar vacuum level. The electron fluence was varied from coating to coating in the range of 0 to 24×10 15 e/cm 2 . The irradiated samples were characterized by the UV–Vis, XRD, SEM and RBS techniques. The plasmon absorption peak at ∼539 nm in UV–Vis spectra was an evidence for the initiation of the growth of gold nanoparticles. The X-ray diffraction results and the blue shift in the plasmon absorption peak reveal that the size of nanoparticles could be tailored in the range from 58 to 40 nm by varying the electron fluence. The diffusion of gold in the PVA was confirmed by the Rutherford backscattering spectroscopy and scanning electron microscopy techniques. This method of synthesis of metal nanoparticles by low energy electron beam irradiation has the key importance in the development of new fabrication techniques for nanomaterials. - Highlights: • The results indicate that low energy electrons can effectively be used for the synthesis of nanoparticles of different sizes. • This study leads to a definite conclusion that gold nanoparticles have been synthesized in surface region of the PVA sheet. • The size of nanoparticles decreases with increasing electron fluence. • The depth of diffusion of Au atoms at maximum fluence was found to be ∼1.5 μm

  18. Optical and electrical properties of electron-irradiated Cu(In,Ga)Se{sub 2} solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Hirose, Y.; Warasawa, M. [Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan); Takakura, K. [Department of Information, Communication and Electrical Engineering, Kumamoto National College of Technology, 2659-2 Suya, Koshi, Kumamoto 861-1102 (Japan); Kimura, S. [Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan); Chichibu, S.F. [CANTech, Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577 (Japan); Ohyama, H. [Department of Information, Communication and Electrical Engineering, Kumamoto National College of Technology, 2659-2 Suya, Koshi, Kumamoto 861-1102 (Japan); Sugiyama, M., E-mail: mutsumi@rs.noda.tus.ac.jp [Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan)

    2011-08-31

    The optical and electrical properties of electron-irradiated Cu(In,Ga)Se{sub 2} (CIGS) solar cells and the thin films that composed the CIGS solar cell structure were investigated. The transmittance of indium tin oxide (ITO), ZnO:Al, ZnO:Ga, undoped ZnO, and CdS thin films did not change for a fluence of up to 1.5 x 10{sup 18} cm{sup -2}. However, the resistivity of ZnO:Al and ZnO:Ga, which are generally used as window layers for CIGS solar cells, increased with increasing irradiation fluence. For CIGS thin films, the photoluminescence peak intensity due to Cu-related point defects, which do not significantly affect solar cell performance, increased with increasing electron irradiation. In CIGS solar cells, decreasing J{sub SC} and increasing R{sub s} reflected the influence of irradiated ZnO:Al, and decreasing V{sub OC} and increasing R{sub sh} mainly tended to reflect the pn-interface properties. These results may indicate that the surface ZnO:Al thin film and several heterojunctions tend to degrade easily by electron irradiation as compared with the bulk of semiconductor-composed solar cells.

  19. High energy electron irradiation effects on Ga-doped ZnO thin films for optoelectronic space applications

    Science.gov (United States)

    Serrao, Felcy Jyothi; Sandeep, K. M.; Bhat, Shreesha; Dharmaprakash, S. M.

    2018-03-01

    Gallium-doped ZnO (GZO) thin films of thickness 394 nm were prepared by a simple, cost-effective sol-gel spin coating method. The effect of 8 MeV electron beam irradiation with different irradiation doses ranging from 0 to 10 kGy on the structural, optical and electrical properties was investigated. Electron irradiation influences the changes in the structural properties and surface morphology of GZO thin films. X-ray diffraction analysis showed that the polycrystalline nature of the GZO films is unaffected by the high energy electron irradiation. The grain size and the surface roughness were found maximum for the GZO film irradiated with 10 kGy electron dosage. The average transmittance of GZO thin films decreased after electron irradiation. The optical band gap of Ga-doped ZnO films was decreased with the increase in the electron dosage. The electrical resistivity of GZO films decreased from 4.83 × 10-3 to 8.725 × 10-4 Ω cm, when the electron dosage was increased from 0 to 10 kGy. The variation in the optical and electrical properties in the Ga-doped ZnO thin films due to electron beam irradiation in the present study is useful in deciding their compatibility in optoelectronic device applications in electron radiation environment.

  20. Effect of electron irradiation and bayberry polyphenols on the quality change of yellowfin tuna fillets during refrigerated storage

    International Nuclear Information System (INIS)

    Bu, Tingting; Jin, Yang; Li, Xiaohui; Zhang, Jinjie; Xu, Dalun; Yang, Wenge; Lou, Qiaoming

    2017-01-01

    This study evaluated the synergistic effect of bayberry polyphenols and electron irradiation in controlling the chemical, microbiological and sensory changes of raw yellowfin tuna fillets at 4 °C for 7 days. The results indicated that the initial values of each index were dose-dependent. The dose of 5 kGy notably accelerated adenosine triphosphate degradation and lipid oxidation, while the doses of 1 and 3 kGy had acceptable sensory quality and yielded a shelf-life of 5 days. The addition of bayberry polyphenols had evident effect in inhibiting freshness breakdown, bacteria growth, histamine formation, and discoloration of tuna fillets. Bayberry polyphenols, as an antioxidant, could inhibit lipid oxidation and sensory side-effects made by irradiation up to 3 kGy. The dose of 1–3 kGy coupled with bayberry polyphenols was optimum to preserve tuna fillets which prolonged the shelf-life to 7 days. - Highlights: • Electron irradiation inhibited bacteria growth and histamine formation. • Electron irradiation increased the red color of tuna fillets. • 5 kGy irradiation decreased the sensory quality of raw tuna fillets. • Bayberry polyphenols combined with irradiation could retard the quality change. • Bayberry polyphenols could be used as natural antioxidant and color fixative.

  1. Radiation tolerance of Si{sub 1−y}C{sub y} source/drain n-type metal oxide semiconductor field effect transistors with different carbon concentrations

    Energy Technology Data Exchange (ETDEWEB)

    Nakashima, Toshiyuki, E-mail: nakashima_t@cdk.co.jp [Interdisciplinary Graduate School of Agriculture and Engineering, University of Miyazaki, 1-1 Gakuen Kibanadai-nishi, Miyazaki (Japan); Chuo Denshi Kogyo Co., Ltd., 3400 Kohoyama, Matsubase, Uki, Kumamoto (Japan); Asai, Yuki; Hori, Masato; Yoneoka, Masashi; Tsunoda, Isao; Takakura, Kenichiro [Kumamoto National College of Technology, 2659-2 Suya, Koshi, Kumamoto 861-1102 (Japan); Gonzalez, Mireia Bargallo [Institut de Microelectronica de Barcelona (Centre Nacional de Microelectronica — Consejo Superior de Investigaciones Cientificas) Campus UAB, 08193 Bellaterra (Spain); Simoen, Eddy [imec, Kapeldreef 75, B-3001 Leuven (Belgium); Claeys, Cor [imec, Kapeldreef 75, B-3001 Leuven (Belgium); Department of Electrical Engineering, KU Leuven, Kasteelpark Arenberg 10, B-3001 Leuven (Belgium); Yoshino, Kenji [Interdisciplinary Graduate School of Agriculture and Engineering, University of Miyazaki, 1-1 Gakuen Kibanadai-nishi, Miyazaki (Japan)

    2014-04-30

    The 2-MeV electron radiation damage of silicon–carbon source/drain (S/D) n-type metal oxide semiconductor field effect transistors with different carbon (C) concentrations is studied. Before irradiation, an enhancement of the electron mobility with C concentration of the S/D stressors is clearly observed. On the other hand, after electron irradiation, both the threshold voltage shift and the maximum electron mobility degradation are independent on the C concentration for all electron fluences studied. These results indicate that the strain induced electron mobility enhancement due to the C doping is retained after irradiation in the studied devices. - Highlights: • We have investigated the electron irradiation effect of the Si{sub 1−y}C{sub y} S/D n-MOSFETs. • The threshold voltage variations by irradiation are independent on the C doping. • The electron-mobility decreased for all C concentrations by electron irradiation. • The strain induced mobility enhancement effect is retained after irradiation.

  2. Electron-irradiation induced changes in the phases and photocatalytic activity of TiO{sub 2} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Sapnar, K.B.; Dhole, S.D. [Department of Physics, University of Pune, Pune 411007 (India); Bhoraskar, V.N., E-mail: vnb@physics.unipune.ac.in [Department of Physics, University of Pune, Pune 411007 (India)

    2012-04-01

    Highlights: Black-Right-Pointing-Pointer The phases of TiO{sub 2} nanoparticles have been changed by electron irradiation. Black-Right-Pointing-Pointer The photocatalytic activity of TiO{sub 2} gets enhanced after electron irradiation. Black-Right-Pointing-Pointer The brookite phase has appeared in TiO{sub 2} after electron irradiation. - Abstract: Samples of TiO{sub 2} nanoparticles, with mixed anatase and rutile phases, were irradiated with 6.5 MeV electrons at fluences, 1.5, 2.0, 2.5, 3.0, and 3.5 Multiplication-Sign 10{sup 15} e cm{sup -2} and characterized by several methods. With increasing electron fluence, a continuous decrease in the average particle size from {approx}80 nm to around 30 nm were observed along with a decrease in the rutile and the anatase phases of TiO{sub 2}, but at different rates, and growth of the TiO{sub 2} brookite phase at slow rate. The photocatalytic activities of different electron irradiated TiO{sub 2} samples, in the photodegradation of methylene blue, were studied by recording UV-Vis absorption spectra of the respective solutions. On electron irradiation, even though the rutile phase in the TiO{sub 2} was decreasing, the photocatalytic activity of the nanoparticles increased continuously with fluence up to {approx}3.0 Multiplication-Sign 10{sup 15} e cm{sup -2}, but decreased at 3.5 Multiplication-Sign 10{sup 15} e cm{sup -2}. The energy levels introduced by the brookite phase and the electron induced defects in TiO{sub 2} could have effectively reduced the electron-hole recombination rate in the absence of the rutile phase. The observed enhancement in the photocatalytic activity of the irradiated TiO{sub 2} is attributed to the formation of small size particles, the introduction of the oxygen related vacancies and other defects, the growth of the brookite phase, and increased absorption of radiation over the ultraviolet and visible range.

  3. Charge deep-level transient spectroscopy study of high-energy-electron-beam-irradiated hydrogenated amorphous silicon

    NARCIS (Netherlands)

    Klaver, A.; Nádaždy, V.; Zeman, M.; Swaaiij, R.A.C.M.M.

    2006-01-01

    We present a study of changes in the defect density of states in hydrogenated amorphous silicon (a-Si:H) due to high-energy electron irradiation using charged deep-level transient spectroscopy. It was found that defect states near the conduction band were removed, while in other band gap regions the

  4. Structural and volume changes and their correlation in electron irradiated alkali silicate glasses

    International Nuclear Information System (INIS)

    Gavenda, Tadeáš; Gedeon, Ondrej; Jurek, Karel

    2017-01-01

    Highlights: • Volume changes were correlated with both incubation dose and Raman spectra. • Irradiation decreases Si-O-Si angle and increases the amount of three-membered rings. • Levelling of the pits depends on the dose below and above incubation dose. • Restoration of the original structure was limited to low-frequency region. - Abstract: Two binary alkali silicate glasses (15K 2 O·85SiO 2 – denoted as K15 and 15Li 2 O·85SiO 2 – denoted as Li15) were irradiated by 50 keV electron beams with doses within the range of 2.1–15.9 kC/m 2 . Volume changes induced by electron irradiation were monitored by means of Atomic Force Microscopy (AFM). Raman spectra were taken from the irradiated spots to observe structural changes. Volume compaction observed at lower doses was correlated with the increase of the D2 peak. Volume expansion at higher doses was related to migration of alkali ions. Irradiated glasses were annealed at 400 °C and 500 °C for 60 min. After annealing irradiated spots were again examined by AFM and Raman spectroscopy in order to determine volume and structural relaxation of radiation induced changes. Annealing at higher temperatures resulted in the levelling of the pits created by irradiation, but only for doses below incubation dose. The pits created by doses above incubation dose were not levelled. Annealing caused decrease of D2 peak and shift of the Si-O-Si vibrations band in direction to original structure. Low-frequency region of annealed Li15 glass was undistinguishable from that of pristine glass, while annealing of K15 glass did not result in the full reversion to the original shape. The differences between glasses were attributed to higher T g of K15 glass. Q-motives bands of both glasses were not completely restored after annealing due to the absence of alkali ions.

  5. ELECTRON IRRADIATION AND THERMAL PROCESSING OF MIXED-ICES OF POTENTIAL RELEVANCE TO JUPITER TROJAN ASTEROIDS

    Energy Technology Data Exchange (ETDEWEB)

    Mahjoub, Ahmed; Poston, Michael J.; Hand, Kevin P.; Hodyss, Robert; Blacksberg, Jordana; Carlson, Robert W.; Ehlmann, Bethany L.; Choukroun, Mathieu [Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109 (United States); Brown, Michael E.; Eiler, John M., E-mail: Mahjoub.Ahmed@jpl.nasa.gov [California Institute of Technology, Division of Geological and Planetary Sciences, Pasadena, CA 91125 (United States)

    2016-04-01

    In this work we explore the chemistry that occurs during the irradiation of ice mixtures on planetary surfaces, with the goal of linking the presence of specific chemical compounds to their formation locations in the solar system and subsequent processing by later migration inward. We focus on the outer solar system and the chemical differences for ice mixtures inside and outside the stability line for H{sub 2}S. We perform a set of experiments to explore the hypothesis advanced by Wong and Brown that links the color bimodality in Jupiter's Trojans to the presence of H{sub 2}S in the surface of their precursors. Non-thermal (10 keV electron irradiation) and thermally driven chemistry of CH{sub 3}OH–NH{sub 3}–H{sub 2}O (“without H{sub 2}S”) and H{sub 2}S–CH{sub 3}OH–NH{sub 3}–H{sub 2}O (“with H{sub 2}S”) ices were examined. Mid-IR analyses of ice and mass spectrometry monitoring of the volatiles released during heating show a rich chemistry in both of the ice mixtures. The “with H{sub 2}S” mixture experiment shows a rapid consumption of H{sub 2}S molecules and production of OCS molecules after a few hours of irradiation. The heating of the irradiated “with H{sub 2}S” mixture to temperatures above 120 K leads to the appearance of new infrared bands that we provisionally assign to SO{sub 2}and CS. We show that radiolysis products are stable under the temperature and irradiation conditions of Jupiter Trojan asteroids. This makes them suitable target molecules for potential future missions as well as telescope observations with a high signal-to-noise ratio. We also suggest the consideration of sulfur chemistry in the theoretical modeling aimed at understanding the chemical composition of Trojans and KOBs.

  6. Structural and volume changes and their correlation in electron irradiated alkali silicate glasses

    Energy Technology Data Exchange (ETDEWEB)

    Gavenda, Tadeáš, E-mail: gavendat@vscht.cz [Department of Glass and Ceramics, University of Chemical Technology, Technicka 5, CZ-166 28 Prague (Czech Republic); Gedeon, Ondrej [Department of Glass and Ceramics, University of Chemical Technology, Technicka 5, CZ-166 28 Prague (Czech Republic); Jurek, Karel [Institute of Physics, Academy of the Czech Republic, Na Slovance 2, CZ-182 21 Prague (Czech Republic)

    2017-04-15

    Highlights: • Volume changes were correlated with both incubation dose and Raman spectra. • Irradiation decreases Si-O-Si angle and increases the amount of three-membered rings. • Levelling of the pits depends on the dose below and above incubation dose. • Restoration of the original structure was limited to low-frequency region. - Abstract: Two binary alkali silicate glasses (15K{sub 2}O·85SiO{sub 2} – denoted as K15 and 15Li{sub 2}O·85SiO{sub 2} – denoted as Li15) were irradiated by 50 keV electron beams with doses within the range of 2.1–15.9 kC/m{sup 2}. Volume changes induced by electron irradiation were monitored by means of Atomic Force Microscopy (AFM). Raman spectra were taken from the irradiated spots to observe structural changes. Volume compaction observed at lower doses was correlated with the increase of the D2 peak. Volume expansion at higher doses was related to migration of alkali ions. Irradiated glasses were annealed at 400 °C and 500 °C for 60 min. After annealing irradiated spots were again examined by AFM and Raman spectroscopy in order to determine volume and structural relaxation of radiation induced changes. Annealing at higher temperatures resulted in the levelling of the pits created by irradiation, but only for doses below incubation dose. The pits created by doses above incubation dose were not levelled. Annealing caused decrease of D2 peak and shift of the Si-O-Si vibrations band in direction to original structure. Low-frequency region of annealed Li15 glass was undistinguishable from that of pristine glass, while annealing of K15 glass did not result in the full reversion to the original shape. The differences between glasses were attributed to higher T{sub g} of K15 glass. Q-motives bands of both glasses were not completely restored after annealing due to the absence of alkali ions.

  7. Adsorption and photocatalytic activity of electron-irradiated polystyrene nanosphere multi-layer film

    International Nuclear Information System (INIS)

    Cho, Sung Oh; Yoo, Seung Hwa; Kim, Jea Joon; Kum, Jong Min

    2012-01-01

    production from water, after the first report of poly(p-phenylene) (PPP) in 1990. Both of these work shows enhanced activity by incorporating a co-catalyst. However, to date, there is no reported literature about single material organic photocatalyst for removal of organic pollutant from water. In this paper, we present a novel low-cost, metal-free organic photocatalyst that consists of only carbon and hydrogen fabricated by electron-beam irradiation on polymer nanospheres. Characterization results and adsorption-photocatalytic activities are shown of electron-irradiated polystyrene (PS) nanospheres

  8. Increased radiation resistance in lithium-counterdoped silicon solar cells

    Science.gov (United States)

    Weinberg, I.; Swartz, C. K.; Mehta, S.

    1984-01-01

    Lithium-counterdoped n(+)p silicon solar cells are found to exhibit significantly increased radiation resistance to 1-MeV electron irradiation when compared to boron-doped n(+)p silicon solar cells. In addition to improved radiation resistance, considerable damage recovery by annealing is observed in the counterdoped cells at T less than or equal to 100 C. Deep level transient spectroscopy measurements are used to identify the defect whose removal results in the low-temperature aneal. It is suggested that the increased radiation resistance of the counterdoped cells is primarily due to interaction of the lithium with interstitial oxygen.

  9. Ge nanoclusters in PECVD-deposited glass after heat treating and electron irradiation

    DEFF Research Database (Denmark)

    Ou, Haiyan; Rørdam, Troels Peter; Rottwitt, Karsten

    2007-01-01

    This paper reports the formation of Ge nanoclusters in silica glass thin films deposited by plasma-enhanced chemical vapor deposition (PECVD). We studied the samples by transmission electron microscopy (TEM) and Raman spectroscopy after annealing. TEM investigation shows that the Ge nanoclusters...... at two areaswere formed by different mechanisms. The Ge nanoclusters formed in a single row along the interface of a silicon substrate and the silica glass film by annealing during high-temperature heat treatment. Ge nanoclusters did not initially form in the bulk of the film but could be subsequently...... formed by the electron-beam irradiation. The interface between the silicon substrate and the silica glass film was investigated by Raman spectroscopy. The shift of the Raman peaks around 286.8 cm−1 and 495 cm−1 suggests that the interface is a Si1−xGex alloy film and that the composition x varies along...

  10. High power n-type metal-wrap-through cells and modules using industrial processes

    Energy Technology Data Exchange (ETDEWEB)

    Guillevin, N.; Heurtault, B.J.B.; Geerligs, L.J.; Van Aken, B.B.; Bennett, I.J.; Jansen, M.J.; Weeber, A.W.; Bultman, J.H. [ECN Solar Energy, P.O. Box 1, NL-1755 ZG Petten (Netherlands); Jianming, Wang; Ziqian, Wang; Jinye, Zhai; Zhiliang, Wan; Shuquan, Tian; Wenchao, Zhao; Zhiyan, Hu; Gaofei, Li; Bo, Yu; Jingfeng, Xiong [Yingli Green Energy Holding Co.,Ltd. 3399 North Chaoyang Avenue, Baoding (China)

    2013-10-15

    This paper reviews our recent progress in the development of metal wrap through (MWT) cells and modules, produced from n-type Czochralski silicon wafers. The use of n-type silicon as base material allows for high efficiencies: for front emitter-contacted industrial cells, efficiencies above 20% have been reported. N-type MWT (nMWT) cells produced by industrial process technologies allow even higher efficiency due to reduced front metal coverage. Based on the same industrial technology, the efficiency of the bifacial n-MWT cells exceeds the efficiency of the n-type front-and-rear contact and bifacial 'Pasha' technology (n-Pasha) by 0.1-0.2% absolute, with a maximum nMWT efficiency of 20.1% so far. Additionally, full back-contacting of the MWT cells in a module results in reduced cell to module (CTM) fill factor losses. In a direct 60-cell module performance comparison, the n-MWT module, based on integrated backfoil, produced 3% higher power output than the comparable tabbed front emitter-contacted n-Pasha module. Thanks to reduced resistive losses in copper circuitry on the backfoil compared to traditional tabs, the CTM FF loss of the MWT module was reduced by about 2.2%abs. compared to the tabbed front emitter contact module. A full-size module made using MWT cells of 19.6% average efficiency resulted in a power output close to 280W. Latest results of the development of the n-MWT technology at cell and module level are discussed in this paper, including a recent direct comparison run between n-MWT and n-Pasha cells and results of n-MWT cells from 140{mu}m thin mono-crystalline wafers, with only very slight loss (1% of Isc) for the thin cells. Also reverse characteristics and effects of reverse bias for extended time at cell and module level are reported, where we find a higher tolerance of MWT modules than tabbed front contact modules for hotspots.

  11. Air-stable n-type colloidal quantum dot solids

    KAUST Repository

    Ning, Zhijun; Voznyy, Oleksandr; Pan, Jun; Hoogland, Sjoerd H.; Adinolfi, Valerio; Xu, Jixian; Li, Min; Kirmani, Ahmad R.; Sun, Jonpaul; Minor, James C.; Kemp, Kyle W.; Dong, Haopeng; Rollny, Lisa R.; Labelle, André J.; Carey, Graham H.; Sutherland, Brandon R.; Hill, Ian G.; Amassian, Aram; Liu, Huan; Tang, Jiang; Bakr, Osman; Sargent, E. H.

    2014-01-01

    Colloidal quantum dots (CQDs) offer promise in flexible electronics, light sensing and energy conversion. These applications rely on rectifying junctions that require the creation of high-quality CQD solids that are controllably n-type (electron-rich) or p-type (hole-rich). Unfortunately, n-type semiconductors made using soft matter are notoriously prone to oxidation within minutes of air exposure. Here we report high-performance, air-stable n-type CQD solids. Using density functional theory we identify inorganic passivants that bind strongly to the CQD surface and repel oxidative attack. A materials processing strategy that wards off strong protic attack by polar solvents enabled the synthesis of an air-stable n-type PbS CQD solid. This material was used to build an air-processed inverted quantum junction device, which shows the highest current density from any CQD solar cell and a solar power conversion efficiency as high as 8%. We also feature the n-type CQD solid in the rapid, sensitive, and specific detection of atmospheric NO2. This work paves the way for new families of electronic devices that leverage air-stable quantum-tuned materials. © 2014 Macmillan Publishers Limited. All rights reserved.

  12. Air-stable n-type colloidal quantum dot solids

    KAUST Repository

    Ning, Zhijun

    2014-06-08

    Colloidal quantum dots (CQDs) offer promise in flexible electronics, light sensing and energy conversion. These applications rely on rectifying junctions that require the creation of high-quality CQD solids that are controllably n-type (electron-rich) or p-type (hole-rich). Unfortunately, n-type semiconductors made using soft matter are notoriously prone to oxidation within minutes of air exposure. Here we report high-performance, air-stable n-type CQD solids. Using density functional theory we identify inorganic passivants that bind strongly to the CQD surface and repel oxidative attack. A materials processing strategy that wards off strong protic attack by polar solvents enabled the synthesis of an air-stable n-type PbS CQD solid. This material was used to build an air-processed inverted quantum junction device, which shows the highest current density from any CQD solar cell and a solar power conversion efficiency as high as 8%. We also feature the n-type CQD solid in the rapid, sensitive, and specific detection of atmospheric NO2. This work paves the way for new families of electronic devices that leverage air-stable quantum-tuned materials. © 2014 Macmillan Publishers Limited. All rights reserved.

  13. n-Type Azaacenes Containing B←N Units.

    Science.gov (United States)

    Min, Yang; Dou, Chuandong; Tian, Hongkun; Geng, Yanhou; Liu, Jun; Wang, Lixiang

    2018-02-12

    We disclose a novel strategy to design n-type acenes through the introduction of boron-nitrogen coordination bonds (B←N). We synthesized two azaacenes composed of two B←N units and six/eight linearly annelated rings. The B←N unit significantly perturbed the electronic structures of the azaacenes: Unique LUMOs delocalized over the entire acene skeletons and decreased aromaticity of the B←N-adjacent rings. Most importantly, these B←N-containing azaacenes exhibited low-lying LUMO energy levels and high electron affinities, thus leading to n-type character. The solution-processed organic field-effect transistor based on one such azaacene exhibited unipolar n-type characteristics with an electron mobility of 0.21 cm 2  V -1  s -1 . © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Silicone metalization

    Energy Technology Data Exchange (ETDEWEB)

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  15. n-Type organic semiconductors in organic electronics.

    Science.gov (United States)

    Anthony, John E; Facchetti, Antonio; Heeney, Martin; Marder, Seth R; Zhan, Xiaowei

    2010-09-08

    Organic semiconductors have been the subject of intensive academic and commercial interest over the past two decades, and successful commercial devices incorporating them are slowly beginning to enter the market. Much of the focus has been on the development of hole transporting, or p-type, semiconductors that have seen a dramatic rise in performance over the last decade. Much less attention has been devoted to electron transporting, or so called n-type, materials, and in this paper we focus upon recent developments in several classes of n-type materials and the design guidelines used to develop them.

  16. Variation of carrier concentration and interface trap density in 8MeV electron irradiated c-Si solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Bhat, Sathyanarayana, E-mail: asharao76@gmail.com; Rao, Asha, E-mail: asharao76@gmail.com [Department of Physics, Mangalore Institute of Technology and Engineering, Moodabidri, Mangalore-574225 (India); Krishnan, Sheeja [Department of Physics, Sri Devi Institute of Technology, Kenjar, Mangalore-574142 (India); Sanjeev, Ganesh [Microtron Centre, Department of Physics, Mangalore University, Mangalagangothri-574199 (India); Suresh, E. P. [Solar Panel Division, ISRO Satellite Centre, Bangalore-560017 (India)

    2014-04-24

    The capacitance and conductance measurements were carried out for c-Si solar cells, irradiated with 8 MeV electrons with doses ranging from 5kGy – 100kGy in order to investigate the anomalous degradation of the cells in the radiation harsh environments. Capacitance – Voltage measurements indicate that there is a slight reduction in the carrier concentration upon electron irradiation due to the creation of radiation induced defects. The conductance measurement results reveal that the interface state densities and the trap time constant increases with electron dose due to displacement damages in c-Si solar cells.

  17. Computation of transverse muon-spin relaxation functions including trapping-detrapping reactions, with application to electron-irradiated tantalum

    International Nuclear Information System (INIS)

    Doering, K.P.; Aurenz, T.; Herlach, D.; Schaefer, H.E.; Arnold, K.P.; Jacobs, W.; Orth, H.; Haas, N.; Seeger, A.; Max-Planck-Institut fuer Metallforschung, Stuttgart

    1986-01-01

    A new technique for the economical evaluation of transverse muon spin relaxation functions in situations involving μ + trapping at and detrapping from crystal defects is applied to electron-irradiated Ta exhibiting relaxation maxima at about 35 K, 100 K, and 250 K. The long-range μ + diffusion is shown to be limted by traps over the entire temperature range investigated. The (static) relaxation rates for several possible configurations of trapped muons are discussed, including the effect of the simultaneous presence of a proton in a vacancy. (orig.)

  18. New design of the pulsed electro-acoustic upper electrode for space charge measurements during electronic irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Riffaud, J.; Griseri, V.; Berquez, L. [UPS, LAPLACE, Université de Toulouse, 118 Route de Narbonne, Toulouse F-31062, France and CNRS, LAPLACE, Toulouse F-31062 (France)

    2016-07-15

    The behaviour of space charges injected in irradiated dielectrics has been studied for many years for space industry applications. In our case, the pulsed electro-acoustic method is chosen in order to determine the spatial distribution of injected electrons. The feasibility of a ring-shaped electrode which will allow the measurements during irradiation is presented. In this paper, a computer simulation is made in order to determine the parameters to design the electrode and find its position above the sample. The obtained experimental results on polyethylene naphthalate samples realized during electronic irradiation and through relaxation under vacuum will be presented and discussed.

  19. SU-F-T-82: Dosimetric Evaluation of a Shield Used for Hemi-Body Skin Electron Irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Rivers, C; Singh, A [Roswell Park Cancer Institute, Buffalo, NY (United States); AlDahlawi, I; Wang, I; Podgorsak, M [Roswell Park Cancer Institute, Buffalo, NY (United States); State University of New York at Buffalo, Buffalo, NY (United States)

    2016-06-15

    Purpose: We had several mycosis fungoides patients with a limited disease to about half of the skin surface. A custom-made plywood shield was used to protect the non-targeted skin region with our total skin electron irradiation (TSEI) technique. We report a dosimetric evaluation for our “hemi-body” skin electron irradiation technique. Methods: The technique is similar to our clinical total skin electron irradiation (TSEI), performed with a six-pair dual field (Stanford technique) at an extended source-to-skin distance (SSD) of 377 cm, with the addition of a plywood shield placed 50 cm from the patient. The shield is made of three layers of standard 5/8″ thick plywood (total thickness of 4.75 cm) that are clamped securely on an adjustable-height stand. Gafchromic EBT3 films were used in assessing the shield’s transmission factor and the extend of the dose penumbra region. To verify the dose delivered for hemi-body skin radiation in a real patient treatment, in-vivo dosimetry using Gafchromic EBT3 films were performed. Film pieces were taped on the patient skin to measure the dose received during the first two fractions, placed on the forehead and upper body (shielded region); and also at the level of pelvic area, left thigh, and left ankle. Results: The shield transmission factor was found to be 10%, and the width of the penumbra (80-to-20% dose fall-off) was about 12 cm. In-vivo dosimetry of a real case confirmed the expected shielded area dose. Conclusion: Hemi-Body skin electron irradiation at an extended SSD is feasible with the addition of a plywood shield at a distance from patient skin. The penumbra dose region and the shield’s transmission factor should be evaluated prior to clinical use. We have treated several hemi-body skin patients with our custom-made plywood shield, the current patient measurements are representative of these for other patients as well.

  20. Electric transport in N-type Fe2O3

    NARCIS (Netherlands)

    Acket, G.A.; Volger, J.

    Resistivity, Seebeck-coefficient, Hall-coefficient and magneto-resistance of n-type single crystal ferric oxide (hematite), containing Sn4+ as an impurity, are reported. The resistivity does not show important anisotropy. The Hall- and magneto-resistance effects are probably related to the parasitic

  1. Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

    International Nuclear Information System (INIS)

    Wang, Xiaojuan; Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli; Zhou, Jun; Zhang, Zengxing

    2015-01-01

    Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

  2. Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Xiaojuan [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Zhou, Jun, E-mail: zhoujunzhou@tongji.edu.cn [Center for Phononics and Thermal Energy Science, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Zhang, Zengxing, E-mail: zhangzx@tongji.edu.cn [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China)

    2015-10-01

    Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

  3. Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

    Science.gov (United States)

    Pradeepkumar, Aiswarya; Zielinski, Marcin; Bosi, Matteo; Verzellesi, Giovanni; Gaskill, D. Kurt; Iacopi, Francesca

    2018-06-01

    Heteroepitaxial 3C-SiC films on silicon substrates are of technological interest as enablers to integrate the excellent electrical, electronic, mechanical, thermal, and epitaxial properties of bulk silicon carbide into well-established silicon technologies. One critical bottleneck of this integration is the establishment of a stable and reliable electronic junction at the heteroepitaxial interface of the n-type SiC with the silicon substrate. We have thus investigated in detail the electrical and transport properties of heteroepitaxial cubic silicon carbide films grown via different methods on low-doped and high-resistivity silicon substrates by using van der Pauw Hall and transfer length measurements as test vehicles. We have found that Si and C intermixing upon or after growth, particularly by the diffusion of carbon into the silicon matrix, creates extensive interstitial carbon traps and hampers the formation of a stable rectifying or insulating junction at the SiC/Si interface. Although a reliable p-n junction may not be realistic in the SiC/Si system, we can achieve, from a point of view of the electrical isolation of in-plane SiC structures, leakage suppression through the substrate by using a high-resistivity silicon substrate coupled with deep recess etching in between the SiC structures.

  4. Reprint of: Effects of cold deformation, electron irradiation and extrusion on deuterium desorption behavior in Zr-1%Nb alloy

    Science.gov (United States)

    Morozov, O.; Mats, O.; Mats, V.; Zhurba, V.; Khaimovich, P.

    2018-01-01

    The present article introduces the data of analysis of ranges of ion-implanted deuterium desorption from Zr-1% Nb alloy. The samples studied underwent plastic deformation, low temperature extrusion and electron irradiation. Plastic rolling of the samples at temperature ∼300 K resulted in plastic deformation with the degree of ε = 3.9 and the formation of nanostructural state with the average grain size of d = 61 nm. The high degree of defectiveness is shown in thermodesorption spectrum as an additional area of the deuterium desorption in the temperature ranges 650-850 K. The further processing of the sample (that had undergone plastic deformation by plastic rolling) with electron irradiation resulted in the reduction of the average grain size (58 nm) and an increase in borders concentration. As a result the amount of deuterium desorpted increased in the temperature ranges 650-900 K. In case of Zr-1% Nb samples deformed by extrusion the extension of desorption area is observed towards the temperature reduction down to 420 K. The formation of the phase state of deuterium solid solution in zirconium was not observed. The structural state behavior is a control factor in the process of deuterium thermodesorption spectrum structure formation with a fixed implanted deuterium dose (hydrogen diagnostics). It appears as additional temperature ranges of deuterium desorption depending on the type, character and defect content.

  5. Single-layer 1T‧-MoS2 under electron irradiation from ab initio molecular dynamics

    Science.gov (United States)

    Pizzochero, Michele; Yazyev, Oleg V.

    2018-04-01

    Irradiation with high-energy particles has recently emerged as an effective tool for tailoring the properties of two-dimensional transition metal dichalcogenides. In order to carry out an atomically-precise manipulation of the lattice, a detailed understanding of the beam-induced events occurring at the atomic scale is necessary. Here, we investigate the response of 1T' -MoS2 to the electron irradiation by ab initio molecular dynamics means. Our simulations suggest that an electron beam with energy smaller than 75 keV does not result in any knock-on damage. The displacement threshold energies are different for the two nonequivalent sulfur atoms in 1T' -MoS2 and strongly depend on whether the top or bottom chalcogen layer is considered. As a result, a careful tuning of the beam energy can promote the formation of ordered defects in the sample. We further discuss the effect of the electron irradiation in the neighborhood of a defective site, the mobility of the sulfur vacancies created and their tendency to aggregate. Overall, our work provides useful guidelines for the imaging and the defect engineering of 1T' -MoS2 using electron microscopy.

  6. Patterning of gold nano-octahedra using electron irradiation combined with thermal treatment and post-cleaning process

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Yong Nam; Kum, Jong Min [Korea Advanced Institute of Science and Technology (KAIST), Department of Nuclear and Quantum Engineering (Korea, Republic of); Lee, Hyeok Moo [Korea Atomic Energy Research Institute (KAERI), Research Division for Industry and Environment (Korea, Republic of); Cho, Sung Oh, E-mail: socho@kaist.ac.kr [Korea Advanced Institute of Science and Technology (KAIST), Department of Nuclear and Quantum Engineering (Korea, Republic of)

    2012-03-15

    A novel approach to pattern nanocrystalline gold (Au) octahedra is presented based on electron irradiation combined with thermal treatment and post-cleaning process using HAuCl{sub 4}-loaded poly(styrene-b-2-vinyl pyridine) (PS-b-P2VP) block copolymer (BCP) as a precursor material. The BCP tends to cross-link under electron irradiation, and thus a patterned film can be prepared by selectively irradiating an electron beam onto a precursor film using a shadow mask. A post-thermal treatment leads to the formation of crystalline Au nano-octahedra inside the patterned film with a help of the BCP acting as a capping agent. Subsequently, the BCP can be removed by O{sub 2} plasma etching combined with oxidative degradation, with the Au nanoparticles remaining. As a result, a patterned film consisting of high-purity nanocrystalline Au octahedra is fabricated. The sizes of the Au octahedral nanoparticles can be readily controlled from 49 to 101 nm by changing the thickness of the precursor film. The patterned Au nano-octahedra films exhibit excellent surface-enhanced Raman scattering behavior with the maximum enhancement factor of {approx}10{sup 6}.

  7. Warm-Electron Effects in n-Type Silicon and Germanium

    DEFF Research Database (Denmark)

    Jørgensen, Mogens Hoffmann

    1967-01-01

    The Boltzmann equation describing the warm-electron case is discussed and a review is given of the scattering mechanisms for n-Ge and n-Si with relatively low doping levels. Taking into account the known band structure, the Boltzmann equation is solved by a numerical iteration method under...

  8. Parameters of compensating centers in n-type Si highly compensated by irradiation. Parametry kompensiruyushchikh tsentrov v n-Si sil'no kompensirovannym oblucheniem

    Energy Technology Data Exchange (ETDEWEB)

    Klinger, P M; Fistul' , V I [Moskovskij Gosudarstvennyj Univ., Moscow (USSR)

    1990-06-01

    Resuls of investigations into effect of {gamma}- and neutron irradiation on defect formation in high-ohmic n-Si

    using technique of capacity temperature dependence (CTD) are given. Radiation dose varied from 4.8x10{sup 17} up to 1.7x10{sup 18} cm{sup -2}. CTD technique is shown to be successfully applied to investigate into defect formation at irradiation of highly compensated silicon. Rate of admission of Ec-0.40 eV deep acceptor levels in n-Si at pulsed electron irradiation does not depend on fine impurity cocentration. Positions of energy levels of deep acceptors introduced into n-Si do not coincide and constitute, respectively, E{sub c}-0.40 and E{sub c}-049 eV.

  9. Low-temperature electron irradiation induced defects in gallium arsenide: bulk and surface acoustic wave studies

    International Nuclear Information System (INIS)

    Brophy, M.J. Jr.

    1985-01-01

    Irradiation of GaAs with 2.25 to 2.5 MeV electrons at temperatures below 190 K produces two peaks in ultrasonic attenuation versus temperature. The defects responsible for both peaks have trigonal symmetry and were observed in n-type and semi-insulating GaAs with bulk and surface acoustic waves (SAW) respectively. Bulk waves at eight frequencies between 9 and 130 MHz and SAW at 73 and 145 MHz were used. The reorientation kinetics of both peaks follow the Arrhenius law. The annealing of both peaks was studied with isochronal and isothermal anneals in the temperature range 200 to 335 K. Peak I anneals with a spectrum of activation energies in the range 0.7-1.1 eV between 220 and 335 K. Peak II anneals with a single activation energy of about 1.1 eV above 300K. The different annealing characteristics indicate that these peaks represent two distinct defects. The annealing above 300 K has not been seen in electrical resistivity measurements, but was observed in earlier length change experiments. Irradiation of GaAs:Cr produces no Cr-radiation defect complexes. The attenuation peak associated with Cr 2+ decrease with electron dose, but starts to recover at 150 K

  10. Formation of copper precipitates in silicon

    Science.gov (United States)

    Flink, Christoph; Feick, Henning; McHugo, Scott A.; Mohammed, Amna; Seifert, Winfried; Hieslmair, Henry; Heiser, Thomas; Istratov, Andrei A.; Weber, Eicke R.

    1999-12-01

    The formation of copper precipitates in silicon was studied after high-temperature intentional contamination of p- and n-type FZ and Cz-grown silicon and quench to room temperature. With the Transient Ion Drift (TID) technique on p-type silicon a critical Fermi level position at EC-0.2 eV was found. Only if the Fermi level position, which is determined by the concentrations of the acceptors and the copper donors, surpasses this critical value precipitation takes place. If the Fermi level is below this level the supersaturated interstitial copper diffuses out. An electrostatic precipitation model is introduced that correlates the observed precipitation behavior with the electrical activity of the copper precipitates as detected with Deep Level Transient Spectroscopy (DLTS) on n-type and with Minority Carrier Transient Spectroscopy (MCTS) on p-type silicon.

  11. A comparative study of the Si diodes of N type applied to high-dose range dosimetry

    International Nuclear Information System (INIS)

    Pascoalino, Kelly Cristina da Silva; Goncalves, Josemary Angelica Correa; Tobias, Carmen Cecilia Bueno

    2011-01-01

    This work presents the results of the comparative studies of floating-zone (Fz) and magnetic Czochralski (MCz) n-type silicon diodes as gamma dosimeters. The devices were irradiated with gamma rays from 60 Co source, Gammacell 220, at Radiation Technology Center (CTR-IPEN/CNEN-SP) with the dose rate of 2 kGy/h. The results with total absorbed doses of approximately 1 MGy showed that the devices studied are tolerant to radiation damages and then can be used as an online dosimeter in high doses radiation processing. (author)

  12. Electron beam silicon purification

    Energy Technology Data Exchange (ETDEWEB)

    Kravtsov, Anatoly [SIA ' ' KEPP EU' ' , Riga (Latvia); Kravtsov, Alexey [' ' KEPP-service' ' Ltd., Moscow (Russian Federation)

    2014-11-15

    Purification of heavily doped electronic grade silicon by evaporation of N-type impurities with electron beam heating was investigated in process with a batch weight up to 50 kilos. Effective temperature of the melt, an indicative parameter suitable for purification process characterization was calculated and appeared to be stable for different load weight processes. Purified material was successfully approbated in standard CZ processes of three different companies. Each company used its standard process and obtained CZ monocrystals applicable for photovoltaic application. These facts enable process to be successfully scaled up to commercial volumes (150-300 kg) and yield solar grade silicon. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Dynamic investigation of electron trapping and charge decay in electron-irradiated Al sub 2 O sub 3 in a scanning electron microscope: Methodology and mechanisms

    CERN Document Server

    Fakhfakh, S; Belhaj, M; Fakhfakh, Z; Kallel, A; Rau, E I

    2002-01-01

    The charging and discharging of polycrystalline Al sub 2 O sub 3 submitted to electron-irradiation in a scanning electron microscope (SEM) are investigated by means of the displacement current method. To circumvent experimental shortcomings inherent to the use of the basic sample holder, a redesign of the latter is proposed and tests are carried out to verify its operation. The effects of the primary beam accelerating voltage on charging, flashover and discharging phenomena during and after electron-irradiation are studied. The experimental results are then analyzed. In particular, the divergence between the experimental data and those predicted by the total electron emission yield approach (TEEYA) is discussed. A partial discharge was observed immediately after the end of the electron-irradiation exposure. The experimental data suggests, that the discharge is due to the evacuation to the ground, along the insulator surface, of released electrons from shallow traps at (or in the close vicinity of) the insulat...

  14. Electron Spin Resonance Shift and Linewidth Broadening of Nitrogen-Vacancy Centers in Diamond as a Function of Electron Irradiation Dose

    OpenAIRE

    Kim, Edwin; Acosta, Victor M.; Bauch, Erik; Budker, Dmitry; Hemmer, Philip R.

    2009-01-01

    A high-nitrogen-concentration diamond sample was subject to 200-keV electron irradiation using a transmission electron microscope. The optical and spin-resonance properties of the nitrogen-vacancy (NV) color centers were investigated as a function of the irradiation dose up to 6.4\\times1021 e-/cm2. The microwave transition frequency of the NV- center was found to shift by up to 0.6% (17.1 MHz) and the linewidth broadened with increasing electron-irradiation dose. Unexpectedly, the measured ma...

  15. Clinical implementation of total skin electron irradiation treatment with a 6 MeV electron beam in high-dose total skin electron mode

    International Nuclear Information System (INIS)

    Lucero, J. F.; Rojas, J. I.

    2016-01-01

    Total skin electron irradiation (TSEI) is a special treatment technique offered by modern radiation oncology facilities, given for the treatment of mycosis fungoides, a rare skin disease, which is type of cutaneous T-cell lymphoma [1]. During treatment the patient’s entire skin is irradiated with a uniform dose. The aim of this work is to present implementation of total skin electron irradiation treatment using IAEA TRS-398 code of practice for absolute dosimetry and taking advantage of the use of radiochromic films.

  16. Clinical implementation of total skin electron irradiation treatment with a 6 MeV electron beam in high-dose total skin electron mode

    Energy Technology Data Exchange (ETDEWEB)

    Lucero, J. F., E-mail: fernando.lucero@hoperadiotherapy.com.gt [Universidad Nacional de Costa Rica, Heredia (Costa Rica); Hope International, Guatemala (Guatemala); Rojas, J. I., E-mail: isaac.rojas@siglo21.cr [Centro Médico Radioterapia Siglo XXI, San José (Costa Rica)

    2016-07-07

    Total skin electron irradiation (TSEI) is a special treatment technique offered by modern radiation oncology facilities, given for the treatment of mycosis fungoides, a rare skin disease, which is type of cutaneous T-cell lymphoma [1]. During treatment the patient’s entire skin is irradiated with a uniform dose. The aim of this work is to present implementation of total skin electron irradiation treatment using IAEA TRS-398 code of practice for absolute dosimetry and taking advantage of the use of radiochromic films.

  17. Effect of electron irradiation and bayberry polyphenols on the quality change of yellowfin tuna fillets during refrigerated storage

    Science.gov (United States)

    Bu, Tingting; Jin, Yang; Li, Xiaohui; Zhang, Jinjie; Xu, Dalun; Yang, Wenge; Lou, Qiaoming

    2017-09-01

    This study evaluated the synergistic effect of bayberry polyphenols and electron irradiation in controlling the chemical, microbiological and sensory changes of raw yellowfin tuna fillets at 4 °C for 7 days. The results indicated that the initial values of each index were dose-dependent. The dose of 5 kGy notably accelerated adenosine triphosphate degradation and lipid oxidation, while the doses of 1 and 3 kGy had acceptable sensory quality and yielded a shelf-life of 5 days. The addition of bayberry polyphenols had evident effect in inhibiting freshness breakdown, bacteria growth, histamine formation, and discoloration of tuna fillets. Bayberry polyphenols, as an antioxidant, could inhibit lipid oxidation and sensory side-effects made by irradiation up to 3 kGy. The dose of 1-3 kGy coupled with bayberry polyphenols was optimum to preserve tuna fillets which prolonged the shelf-life to 7 days.

  18. Evaluation of induced radioactivity in 10 MeV-Electron irradiated spices, (2); [beta]-ray counting

    Energy Technology Data Exchange (ETDEWEB)

    Katayama, Tadashi; Furuta, Masakazu; Shibata, Setsuko; Matsunami, Tadao; Ito, Norio; Mizohata, Akira; Toratani, Hirokazu (Osaka Prefectural Univ., Sakai (Japan). Research Inst. for Advanced Science and Technology); Takeda, Atsuhiko

    1994-02-01

    In order to check radioactivity of beta-emmitters produced by ([gamma], n) reactions which could occur at energies up to 10 MeV, black pepper, white pepper, red pepper, ginger and turmeric were irradiated with 10 MeV electron from a linear accelerator to a dose of 100 kGy. Beta-rays were counted using a 2[pi] gas flow counter and a liquid scintillation counter. Any induced radioactivity could not be detected in irradiated samples. When inorganic compounds containing the nuclides in the list were artificially added in the samples and were irradiated, the [beta]-activities were detected. From the amount of observed radioactivities of [beta]-emmitters produced in the compounds as photonuclear products, it is concluded that the induced radioactivity in natural samples by 10 MeV-electron irradiation were far smaller than natural radioactivity from [sup 40]K contained in the samples and, hence, its biological effects should be negligible. (author).

  19. Evaluation of induced radioactivity in 10 MeV-electron irradiated spices, (1); [gamma]-ray measurement

    Energy Technology Data Exchange (ETDEWEB)

    Furuta, Masakazu; Katayama, Tadashi; Ito, Norio; Mizohata, Akira; Matsunami, Tadao; Shibata, Setsuko; Toratani, Hirokazu (Osaka Prefectural Univ., Sakai (Japan). Research Inst. for Advanced Science and Technology); Takeda, Atsuhiko

    1994-02-01

    Black pepper, white pepper, red pepper, ginger and turmeric were irradiated with 10 MeV electrons from a linear accelerator to a dose of 100 kGy and radioactivity was measured in order to estimate induced radioactivity in the irradiated foods. Induced radioactivity could not be detected significantly by [gamma]-ray spectrometry in the irradiated samples except for spiked samples which contain some photonuclear target nuclides in the list of photonuclear reactions which could produce radioactivity below 10 MeV. From the amount of observed radioactivities of short-lived photonuclear products in the spiked samples and calculation of H[sub 50] according to ICRP Publication 30, it was concluded that the induced radioactivity and its biological effects in the 10 MeV electron-irradiated natural samples were negligible in comparison with natural radioactivity from [sup 40]K contained in the samples. (author).

  20. Orientation and properties of the blends on high-molecular mass polyacrylonitrile with trihydroxyethylenedimethacrylate under electron irradiation

    International Nuclear Information System (INIS)

    Lomonosova, N.V.

    1998-01-01

    Molecular orientation of the drawn blends of high- molecular-mass poly(acrylonitrile) containing 5-50 wt % of trihydroxyethylenedimethacrylate and a change in the orientation of the drawn samples upon irradiation with accelerated electrons was studied by methods of birefringence, isometric heating, and IR dichroism. The degree of orientation of the unirradiated blends containing certain amounts of oligomer exceed that of the individual polymer. In the region of large drawing ratios, the differential degree of orientation of the polymer matrix is not affected by the irradiation, while the orientation of the oligomer component increase. High values of the strength (600-730 MPa) and the modulus (18-22 GPa) of the compositions are due to the presence of a crystalline skeleton formed by unfolded chains of the polymer matrix stabilized by the electron irradiation induced cross-linking

  1. Medulloblastoma: Long-term follow-up of patients treated with electron irradiation of the spinal field

    International Nuclear Information System (INIS)

    Gaspar, L.E.; Dawson, D.J.; Tilley-Gulliford, S.A.; Banerjee, P.

    1991-01-01

    Thirty-two patients with posterior fossa medulloblastoma underwent treatment with electron irradiation to the spinal field. The 5- and 10-year actuarial survival rates were 57% and 50%, respectively. Late complications observed in the 15 patients followed up for more than 5 years were short stature (six patients), decreased sitting-standing height ratio (four patients), scoliosis (two patients), poor school performance (seven patients), xerostomia (one patient), esophageal stricture (one patient), pituitary dysfunction (four patients), primary hypothyroidism (one patient), bilateral eighth-nerve deafness (one patient), and carcinoma of the thyroid (one patient). Complications following treatment with electrons to a spinal field are compared with reported complications following treatment with photons to the spinal field. Although short-term reactions were minimal, the authors found no difference in late complications. More sophisticated treatment planning may show such a long-term benefit in the future

  2. Persistent photoconductivity and photo-responsible defect in 30 MeV-electron irradiated single crystal ZnO

    International Nuclear Information System (INIS)

    Kuriyama, K.; Matsumoto, K.; Kushida, K.; Xu, Q.

    2010-01-01

    Persistent photoconductivity (PPC) in 30-MeV electron irradiated ZnO single crystals is studied by excitation using light emitting diodes (LEDs) with various wavelengths. The decay transient of the photoconductivity shows relaxation times in the range of a few ten days for the illumination at 90 K and a few hours at room temperature. An electron paramagnetic resonance (EPR) signal with g-value = 2.005 appears after illumination of blue LED, suggesting the transfer from the artificially introduced oxygen vacancy of 2+ charge state to the metastable + charge state. Once generated, the metastable state does not immediately decay into the 2+ charge state because of energetic barriers of ∼190 meV, supporting the mechanism of PPC proposed by Van de Walle.

  3. Effect of neutron irradiation on p-type silicon

    International Nuclear Information System (INIS)

    Sopko, B.

    1973-01-01

    The possibilities are discussed of silicon isotope reactions with neutrons of all energies. In the reactions, 30 Si is converted to a stable phosphorus isotope forming n-type impurities in silicon. The above reactions proceed as a result of thermal neutron irradiation. An experiment is reported involving irradiation of two p-type silicon single crystals having a specific resistance of 2000 ohm.cm and 5000 to 20 000 ohm.cm, respectively, which changed as a result of irradiation into n-type silicon with a given specific resistance. The specific resistance may be pre-calculated from the concentration of impurities and the time of irradiation. The effects of irradiation on other silicon parameters and thus on the suitability of silicon for the manufacture of semiconductor elements are discussed. (J.K.)

  4. Preparation of various hydrogels based on poly (Vinyl pyrrolidone) and poly ethylene glycol using gamma and electron irradiation

    International Nuclear Information System (INIS)

    Ajji, Z.

    2006-11-01

    Different hydrogels have been prepared using gamma and electron irradiation; the hydrogels are composed of poly(vinyl pyrolidone) (PVP), poly(ethylene glycol) (PEG). The influence of some process parameters on the properties of the hydrogels has been investigated as: the gel fraction, maximum swelling, swelling kinetics, and mechanical properties. In the first part of this study, hydrogel dressings have been prepared using electron irradiation, and the dressings are composed of poly(vinyl pyrrolidone) (PVP), poly(ethylene glycol) (PEG) and agar. The gel fraction increases with increasing PVP concentration due to increased crosslink density, and decreases with increasing the PEG concentration. PEG seems to act not only as plasticizer but also to modify the gel properties as gelation% and maximum swelling. The prepared hydrogels dressings could be considered as a good barrier against microbes. In the second part, different hydrogels have been prepared based on different concentrations of poly(vinyl pyrrolidone) and using gamma irradiation. The gel fraction and maximum swelling of the hydrogels has been determined. In the third part of the study, different hydrogels have been prepared based on different concentrations of poly(vinyl pyrrolidone) and poly(ethylene glycol) (PEG) with various molecular weights, and using gamma irradiation. The gel fraction and maximum swelling of the hydrogels has been determined. The data show that PEG with low molecular weight needs a high dose for the gelation, and the presence of PVP lowers the needed gelation dose. The maximum swelling decreases with increasing irradiation dose and the PVP concentration, which is due to higher crosslinks between the polymer chains. (author)

  5. Quenching mechanisms of porous silicon photoluminescence with an electron beam at different intensity

    CERN Document Server

    Kostishko, B M

    2001-01-01

    The effect of the particles flux density by the electron irradiation of the porous silicon on the kinetics of the surface complexes desorption and correspondingly on the photoluminescence quenching degree is studied. It is shown, that by the electron beam density above 5.5 x 10 sup 1 sup 3 cm sup - sup 2 s sup - sup 1 there occurs the surface charging and decrease in its adsorption ability relative to the donor molecular groups

  6. Spin injection in n-type resonant tunneling diodes.

    Science.gov (United States)

    Orsi Gordo, Vanessa; Herval, Leonilson Ks; Galeti, Helder Va; Gobato, Yara Galvão; Brasil, Maria Jsp; Marques, Gilmar E; Henini, Mohamed; Airey, Robert J

    2012-10-25

    We have studied the polarized resolved photoluminescence of n-type GaAs/AlAs/GaAlAs resonant tunneling diodes under magnetic field parallel to the tunnel current. Under resonant tunneling conditions, we have observed two emission lines attributed to neutral (X) and negatively charged excitons (X-). We have observed a voltage-controlled circular polarization degree from the quantum well emission for both lines, with values up to -88% at 15 T at low voltages which are ascribed to an efficient spin injection from the 2D gases formed at the accumulation layers.

  7. Excitonic optical bistability in n-type doped semiconductors

    International Nuclear Information System (INIS)

    Nguyen Ba An; Le Thi Cat Tuong

    1991-07-01

    A resonant monochromatic pump laser generates coherent excitons in an n-type doped semiconductor. Both exciton-exciton and exciton-donor interactions come into play. The former interaction can give rise to the appearance of optical bistability which is heavily influenced by the latter one. When optical bistability occurs at a fixed laser frequency both its holding intensity and hysteresis loop size are shown to decrease with increasing donor concentration. Two possibilities are suggested for experimentally determining one of the two parameters of the system - the exciton-donor coupling constant and the donor concentration, if the other parameter is known beforehand. (author). 36 refs, 2 figs

  8. N-Type Colloidal-Quantum-Dot Solids for Photovoltaics

    KAUST Repository

    Zhitomirsky, David

    2012-09-12

    N-type PbS colloidal-quantum-dot (CQD) films are fabricated using a controlled halide chemical treatment, applied in an inert processing ambient environment. The new materials exhibit a mobility of 0.1 cm2 V -1 s-1. The halogen ions serve both as a passivating agent and n-dope the films via substitution at surface chalcogen sites. The majority electron concentration across the range 1016 to 1018 cm-3 is varied systematically. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Origins of n -type doping difficulties in perovskite stannates

    Science.gov (United States)

    Weston, L.; Bjaalie, L.; Krishnaswamy, K.; Van de Walle, C. G.

    2018-02-01

    The perovskite stannates (A SnO3 ; A = Ba, Sr, Ca) are promising for oxide electronics, but control of n -type doping has proved challenging. Using first-principles hybrid density functional calculations, we investigate La dopants and explore the formation of compensating acceptor defects. We find that La on the A site always behaves as a shallow donor, but incorporation of La on the Sn site can lead to self-compensation. At low La concentrations and in O-poor conditions, oxygen vacancies form in BaSnO3. A -site cation vacancies are found to be dominant among the native compensating centers. Compared to BaSnO3, charge compensation is a larger problem for the wider-band-gap stannates, SrSnO3 and CaSnO3, a trend we can explain based on conduction-band alignments. The formation of compensating acceptor defects can be inhibited by choosing oxygen-poor (cation-rich) growth or annealing conditions, thus providing a pathway for improved n -type doping.

  10. Silicon detectors

    International Nuclear Information System (INIS)

    Klanner, R.

    1984-08-01

    The status and recent progress of silicon detectors for high energy physics is reviewed. Emphasis is put on detectors with high spatial resolution and the use of silicon detectors in calorimeters. (orig.)

  11. The Influence of High-Energy Electrons Irradiation on Surface of n-GaP and on Au/n-GaP/Al Schottky Barrier Diode

    Science.gov (United States)

    Demir, K. Çinar; Kurudirek, S. V.; Oz, S.; Biber, M.; Aydoğan, Ş.; Şahin, Y.; Coşkun, C.

    We fabricated 25 Au/n-GaP/Al Schottky devices and investigated the influence of high electron irradiation, which has 12MeV on the devices, at room temperature. The X-ray diffraction patterns, scanning electron microscopic images and Raman spectra of a gallium phosphide (GaP) semiconductor before and after electron irradiation have been analyzed. Furthermore, some electrical measurements of the devices were carried out through the current-voltage (I-V) and capacitance-voltage (C-V) measurements. From the I-V characteristics, experimental ideality factor n and barrier height Φ values of these Schottky diodes have been determined before and after irradiation, respectively. The results have also been analyzed statically, and a gauss distribution has been obtained. The built-in potential Vbi, barrier height Φ, Fermi level EF and donor concentration Nd values have been determined from the reverse bias C-V and C-2-V curves of Au/n-GaP/Al Schottky barrier diodes at 100kHz before and after 12MeV electron irradiation. Furthermore, we obtained the series resistance values of Au/n-GaP/Al Schottky barrier diodes with the help of different methods. Experimental results confirmed that the electrical characterization of the device changed with the electron irradiation.

  12. N-type organic electrochemical transistors with stability in water

    KAUST Repository

    Giovannitti, Alexander

    2016-10-07

    Organic electrochemical transistors (OECTs) are receiving significant attention due to their ability to efficiently transduce biological signals. A major limitation of this technology is that only p-type materials have been reported, which precludes the development of complementary circuits, and limits sensor technologies. Here, we report the first ever n-type OECT, with relatively balanced ambipolar charge transport characteristics based on a polymer that supports both hole and electron transport along its backbone when doped through an aqueous electrolyte and in the presence of oxygen. This new semiconducting polymer is designed specifically to facilitate ion transport and promote electrochemical doping. Stability measurements in water show no degradation when tested for 2 h under continuous cycling. This demonstration opens the possibility to develop complementary circuits based on OECTs and to improve the sophistication of bioelectronic devices.

  13. N-type organic electrochemical transistors with stability in water

    KAUST Repository

    Giovannitti, Alexander; Nielsen, Christian B.; Sbircea, Dan-Tiberiu; Inal, Sahika; Donahue, Mary; Niazi, Muhammad Rizwan; Hanifi, David A.; Amassian, Aram; Malliaras, George G.; Rivnay, Jonathan; McCulloch, Iain

    2016-01-01

    Organic electrochemical transistors (OECTs) are receiving significant attention due to their ability to efficiently transduce biological signals. A major limitation of this technology is that only p-type materials have been reported, which precludes the development of complementary circuits, and limits sensor technologies. Here, we report the first ever n-type OECT, with relatively balanced ambipolar charge transport characteristics based on a polymer that supports both hole and electron transport along its backbone when doped through an aqueous electrolyte and in the presence of oxygen. This new semiconducting polymer is designed specifically to facilitate ion transport and promote electrochemical doping. Stability measurements in water show no degradation when tested for 2 h under continuous cycling. This demonstration opens the possibility to develop complementary circuits based on OECTs and to improve the sophistication of bioelectronic devices.

  14. Metallization of DNA on silicon surface

    International Nuclear Information System (INIS)

    Puchkova, Anastasiya Olegovna; Sokolov, Petr; Petrov, Yuri Vladimirovich; Kasyanenko, Nina Anatolievna

    2011-01-01

    New simple way for silver deoxyribonucleic acid (DNA)-based nanowires preparation on silicon surface was developed. The electrochemical reduction of silver ions fixed on DNA molecule provides the forming of tightly matched zonate silver clusters. Highly homogeneous metallic clusters have a size about 30 nm. So the thickness of nanowires does not exceed 30–50 nm. The surface of n-type silicon monocrystal is the most convenient substrate for this procedure. The comparative analysis of DNA metallization on of n-type silicon with a similar way for nanowires fabrication on p-type silicon, freshly cleaved mica, and glass surface shows the advantage of n-type silicon, which is not only the substrate for DNA fixation but also the source of electrons for silver reduction. Images of bound DNA molecules and fabricated nanowires have been obtained using an atomic force microscope and a scanning ion helium microscope. DNA interaction with silver ions in a solution was examined by the methods of ultraviolet spectroscopy and circular dichroism.

  15. Electron spin resonance signal from a tetra-interstitial defect in silicon

    CERN Document Server

    Mchedlidze, T

    2003-01-01

    The Si-B3 electron spin resonance (ESR) signal from agglomerates of self-interstitials was detected for the first time in hydrogen-doped float-zone-grown silicon samples subjected to annealing after electron irradiation. Previously this signal had been detected only in neutron- or proton-irradiated silicon samples. The absence of obscuring ESR peaks for the investigated samples at applied measurement conditions allowed an investigation of the hyperfine structure of the Si-B3 spectra. The analysis supports assignment of a tetra-interstitial defect as the origin of the signal.

  16. Magnetic, thermal and luminescence properties in room-temperature nanosecond electron-irradiated various metal oxide nanopowders

    Science.gov (United States)

    Sokovnin, S. Yu; Balezin, M. E.; Il’ves, V. G.

    2018-03-01

    By means of pulsed electron beam evaporation in vacuum of targets non-magnetic, in bulk state, Al2O3 and YSZ (ZrO2-8% Y2O3) oxides, magnetic nanopowders (NPs) with a high specific surface were produced. The NPs were subsequently irradiated in air by electrons with energy of 700 keV, using a URT-1 accelerator for 15 and 30 minutes. The magnetic, thermal, and pulsed cathodoluminescence (PCL) characteristics of NPs were measured before and after irradiation. It was established that the electron irradiation non-monotonically changes the magnetization of the pristine samples. To the contrary, a clear correlation between the intensity of PCL and the irradiation doses is found in the oxides. There was a decrease in the intensity of PCL after irradiation. Luminescent and thermal properties reflect the transformation of structural defects in NPs more strongly after the exposure to a pulsed electron beam in comparison with corresponding changes of the NPs magnetic response.

  17. Defect structures in YBa/sub 2/Cu/sub 3/O/sub 7-x/ produced by electron irradiation

    International Nuclear Information System (INIS)

    Kirk, M.A.; Baker, M.C.; Liu, J.Z.; Lam, D.J.; Weber, H.W.

    1988-01-01

    Defect structures in YBa/sub 2/Cu/sub 3/O/sub 7-x/ produced by electron irradiation at 300 K were investigated by transmission electron microscopy. Threshold energies for the production of visible defects were determined to be 152 keV and 131 keV (+- 7 keV) in directions near the a and b (b>a) axes (both perpendicular to c, the long axis in the orthorhombic structure), respectively. During above threshold irradiations in an electron flux of 3x10/sup 18/ cm/sup -2/ s/sup -1/, extended defects were observed to form and grow to sizes of 10-50 nm over 1000 s in material thickness 20-200 nm. Such low electron threshold energies suggest oxygen atom displacements with recoil energies near 20 eV. The observation of movement of twin boundaries during irradiation just above threshold suggests movement of the basal plane oxygen atoms by direct displacement or defect migration processes. Crystals irradiated above threshold were observed after about 24 hours to have transformed to a structure heavily faulted on planes perpendicular to the c axis

  18. Effect of gamma-ray and electron irradiation on the response of solid-state track detectors

    International Nuclear Information System (INIS)

    Fukuda, Kyue

    1980-01-01

    Specimens of muscovite mica were first exposed to fission fragments and then to various gamma-ray fields from a 60 Co source ranging from 1.9 x 10 3 to 1.6 x 10 4 Mrad dose. The results show that the average etched width of fission-fragment tracks decreases with increasing gamma-ray dose. Shallow pits were observed in etched specimens when the gamma-ray dose exceeded 5 x 10 3 Mrad. Numerous shallow etch pits caused by the gamma-ray irradiation interfered with the observation of fission tracks in the specimens. No shallow etch pits were observed in the specimen annealed for 100 min at 600 0 C before the gamma-ray irradiation. Pre-annealing extends the ''safety limits'' of gamma background below which muscovite mica can be used to observe fission tracks without any gamma-ray interference. Gamma-ray and electron irradiation caused significant increase of the resistance to thermal decomposition of muscovite mica. The resistance increased markedly in the dose range from 5 x 10 3 to 8 x 10 3 Mrad. These phenomena suggest the use of mica to assess radiation doses of gamma rays and electrons up to several thousand megarads. (author)

  19. Influence of high energy electron irradiation and gamma irradiation on the osmotic resistance of human erythrocyte membranes

    International Nuclear Information System (INIS)

    Catana, D.; Hategan, Alina; Moraru, Rodica; Popescu, Alina; Morariu, V. V.

    1998-01-01

    The effects of 5 MeV electrons and of gamma irradiation at 0 deg. C on the osmotic fragility of human erythrocyte membranes are presented. Both electron and gamma radiation in the range 0-400 Gy induced no hemolysis indicating that the membrane modifications due to radiation interaction do not reach a critical point as to cause swelling of the cells and subsequent lysis. The osmotic stress experiments performed after irradiation showed that the gamma irradiated erythrocytes exhibited an almost similar sigmoidal behavior for all irradiation doses, whereas the electron irradiated samples showed a much larger increase in hemolysis degree and, in the case of a given electron dose (100 Gy), the hemolysis was found much smaller than for the control sample (a similar behavior of the erythrocytes was found in the case of microwave irradiation at temperatures under 0 deg. C). Our experimental data suggest that electron radiation and gamma radiation have different impacts on the erythrocyte membrane fluidity, involving, probably, the different rate of energy deposition in the samples and the direct interaction of electrons with the erythrocyte membranes. (authors)

  20. Determination of displacement threshold energies in pure Ti and in γ-TiAl alloys by electron irradiation

    International Nuclear Information System (INIS)

    Sattonnay, G.; Dimitrov, O.

    1999-01-01

    Resistivity damage rates, determined during low-temperature electron irradiations in the energy range 0.3-2.5 MeV, were used for evaluating displacement threshold energies of titanium in high purity hcp titanium, and of titanium and aluminium in γ-TiAl intermetallic compounds. These parameters were deduced from a comparison of experimental displacement cross-section variations as a function of electron energy, with theoretical curves based on a displacement model for diatomic materials. The displacement energy of titanium in hcp titanium appears to depend on the electron energy. A threshold value of 21±1 eV was obtained in the range 0.3-0.5 MeV, and a larger value of 30±2 eV is determined in the range 0.5-2.5 MeV. In γ-TiAl, aluminium atoms are displaced first, with a threshold displacement energy (34±2 eV) larger than the one of titanium atoms, and much higher than the value in pure aluminium. The displacement energy of Ti atoms is 28±2 eV, close to the one obtained in pure titanium under similar conditions. These results were used for re-evaluating the Frenkel-pair resistivity of the stoichiometric TiAl compound. (orig.)

  1. Synthesis of gold and silver nanoparticles by electron irradiation at 5-15 keV energy

    Energy Technology Data Exchange (ETDEWEB)

    Mahapatra, S K; Bogle, K A; Dhole, S D; Bhoraskar, V N [Microtron Accelerator Laboratory, Department of Physics, University of Pune, Pune-411007 (India)

    2007-04-04

    Thin coatings ({approx}10 {mu}m) made from a mixture of polyvinyl alcohol (PVA) and HAuCl{sub 4} or PVA and AgNO{sub 3} on quartz plates were irradiated with 5-15 keV electrons, at room temperature. The electron energy was varied from coating to coating in the range of 5-15 keV, but electron fluence was kept constant at {approx}10{sup 15} e cm{sup -2}. Samples were characterized by the UV-vis, XRD, SEM and TEM techniques. The plasmon absorption peaks at {approx}511 and {approx}442 nm confirmed the formation of gold and silver nanoparticles in the respective electron-irradiated coatings. The XRD, SEM and TEM measurements reveal that the average size of the particles could be tailored in the range of 130-50 nm for gold and from 150-40 nm for silver by varying the electron energy in the range of 5-15 keV. These particles of gold and silver embedded in the polymer could also be separated by dissolving the coatings in distilled water.

  2. Multiscale models of metal behaviour and structural change under the action of high-current electron irradiation

    International Nuclear Information System (INIS)

    Mayer, A E; Krasnikov, V S; Mayer, P N; Pogorelko, V V

    2017-01-01

    We present our models of the tensile fracture of metals in the solid and molten states, the melting and the plastic deformation of the solid metals. Also we discuss implementation of these models for simulation of the high current electron beam impact on metals. The models are constructed in the following way: the atomistic simulations are used at the first stage for investigation of dynamics and kinetics of structural defects in material (voids, dislocations, melting cites); equations describing evolution of such defects are constructed, verified, and their parameters are identified by means of comparison with the atomistic simulation result; finally, the defects evolution equations are incorporated into the continuum model of the substance behaviour on the macroscopic scale. The obtained continuum models with accounting of defects subsystems are tested in comparison with the experimental results known from literature. The proposed models not only allow one to describe the metal behaviour under the conditions of intensive electron irradiation, but they also allow one to determine the structural changes in the irradiated material. (paper)

  3. Further study of the glassy low-temperature properties of irradiated crystalline quartz: neutron and electron irradiation

    International Nuclear Information System (INIS)

    Laermans, C.; Daudin, B.

    1979-01-01

    Recently it has been shown that a quartz crystal after light fast neutron irradiation shows low temperature hypersonic properties which are similar to those found in glasses although the sample was still crystalline. Additional measurements have been carried out in the neutron-irradiated sample and a sample irradiated with high energy electrons has also been investigated. (Fast neutron dose 6 x 10 18 n/cm 2 , 2 MeV electron dose 3 x 10 19 e/cm 2 ). A magnetic field up to 1.5 T was found to have no influence in the hypersonic saturation behaviour of the neutron-irradiated sample (9 GHz, 1.65 K) and thermal conductivity measurements are consistent with a number of two level systems (2 LS) an order of magnitude lower than in vitreous silica as found before. Low temperature hypersonic measurements as a function of acoustic intensity and temperature as well as thermal conductivity measurements give no evidence for the presence of 2 LS in the electron irradiated sample. Considering the damage created in both samples this indicates that 2 LS are probably not related to point defects

  4. Effect of electron irradiation in hatching eggs experimentally inoculated with salmonella enteriditis, on hatch ability and broiler performance

    International Nuclear Information System (INIS)

    Castaneda S, M.P.

    1995-01-01

    The effect of four doses of electrons irradaition on bacteriologic population in hatching egg following experimental shell contamination with Salmonella enteriditis phage type 13 was investigated. Fresh, whole, intact raw eggs were inoculated with 10 9 Colony-Forming Units of Salmonella enteriditis, eggs were irradiated with a beam electron source at either: 0.5, 1, 2 and 3 KGy. The bacteriologic evaluation was made with Gentry's and Williams' technic. After the irradiation the groups were taken to commercial hatchery and were incubated in satndards conditions. The bacteriologic evaluation of the shell showed a significant 2.8 log reduction on the group of eggs that were irradiated with 1 KGy as compared with 0.5 KGy doses group and control group (P<0.05). A negative correlation (r=-0.93) between irradiation doses and CFU (P<0.05) was also observed. Bacteriologic evaluation of the internal shell membrane exhibited a highly significant inactivation (P<0.01) of S. enteriditis of 100% in the group of eggs irradiated at 2 and 3 kGy. A high negative correlation (r=-0.90) between irradiation doses and samples of internal structures (P<0.05) was observed. The results obtained suggested that the electrons irradiation may be use like a control system of salmonelosis on egg and like desinfection system on hatching eggs because it did not cause any effect on hatchability and broiler performance. (Author)

  5. Effects of intraoperative electron irradiation in the dog on cell turnover in intact and surgically-anastomosed aorta and intestine

    International Nuclear Information System (INIS)

    Sindelar, W.F.; Morrow, B.M.; Travis, E.L.; Tepper, J.; Merkel, A.B.; Kranda, K.; Terrill, R.

    1983-01-01

    Adults dogs were subjected to laparotomy and intraoperative electron irradiation after division and reanastomosis of aorta or after construction of a blind loop of small intestine having a transverse suture line and an end-to-side anastomosis. Dogs received intraoperative irradiation of both intact and anastomosed aorta or intestine in doses of 0, 2000, 3000, or 4500 rad. Animals were sacrificed at seven days or three months following treatment. At 24 hours prior to sacrifice, dogs received 5 mCi tritiated thymidine intravenously. Irradiated and non-irradiated segments of aorta and small intestine, including intact and anastomotic regions, were analyzed for tritiated thymidine incorporation and were subjected to autoradiography. Incorporation studies showed diminution in tritiated thymidine uptake by irradiated portions of aorta and small intestine, in both intact and anastomotic regions. Autoradiograms revealed that irradiated areas of intact or anastomotic aorta or intestine had diminished labeling of stromal cells, suggesting a lowered cell proliferative capacity of irradiated tissue compared to non-irradiated portions. Inflammatory cells showed similar labeling indices in irradiated and non-irradiated tissues, both intact and surgically-manipulated, suggesting that irradiation does not significantly affect a subsequent local inflammatory response. Radiation-induced decreases in tritiated thymidine incoporation in irradiated aorta and small intestine were generally more marked at seven days than at three months following irradiation, suggesting that radiation-induced depression of cell turnover rates decreases with time

  6. The action of a dietary retinoid on gene expression and cancer induction in electron-irradiated rat skin

    International Nuclear Information System (INIS)

    Burns, F.J.; Chen, S.; Xu, G.; Wu, F.; Tang, M.S.

    2002-01-01

    Current models of radiation carcinogenesis generally assume that the DNA is damaged in a variety of ways by the radiation and that subsequent cell divisions contribute to the conversion of the damage to heritable mutations. Cancer may seem complex and intractable, but its complexity provides multiple opportunities for preventive interventions. Mitotic inhibitors are among the strongest cancer preventive agents, not only slowing the growth rate of preneoplasias but also increasing the fidelity of DNA repair processes. Ionizing radiation, including electrons, is a strong inducer of cancer in rat skin, and dietary retinoids have shown potent cancer preventive activity in the same system. A non-toxic dietary dose of retinyl acetate altered gene expression levels 24 hours after electron irradiation of rat skin. Of the 8740 genes on an Affymetrix rat expression array, the radiation significantly (5 fold or higher) altered 188, while the retinoid altered 231, including 16 radiation-altered genes that were reversely altered. While radiation strongly affected the expression of stress response, immune/inflammation and nucleic acid metabolism genes, the retinoid most strongly affected proliferation-related genes, including some significant reversals, such as, keratin 14, retinol binding protein, and calcium binding proteins. These results point to reversal of proliferation-relevant genes as a likely basis for the anti-radiogenic effects of dietary retinyl acetate. (author)

  7. Studies on color-center formation in glass utilizing measurements made during 1 to 3 MeV electron irradiation

    International Nuclear Information System (INIS)

    Swyler, K.J.; Levy, P.W.

    1976-01-01

    The coloring of NBS 710 glass has been studied using a new facility for making optical absorption measurements during and after electron irradiation. The induced absorption contains three Gaussian shaped bands. The color center growth curves contain two saturating exponential and one linear components. After irradiation the coloring decays and can be described by three decreasing exponentials. At room temperature both the coloring curve plateau and coloring rate increase with increasing dose rate. Coloring measurements made at a fixed dose rate but at increasing temperature indicate: (1) the coloring curve plateau decreases with increasing temperature and coloring has not been observed at 400 0 C; (2) the plateau is reached more rapidly as the temperature increases; (3) the decay occurring after irradiation cannot be described by Arrhenius kinetics. At each temperature the coloring can be explained by simple kinetics. The temperature dependence of the decay can be explained if it is assumed that the thermal untrapping is controlled by a distribution of activation energies

  8. Dependence of high density nitrogen-vacancy center ensemble coherence on electron irradiation doses and annealing time

    Science.gov (United States)

    Zhang, C.; Yuan, H.; Zhang, N.; Xu, L. X.; Li, B.; Cheng, G. D.; Wang, Y.; Gui, Q.; Fang, J. C.

    2017-12-01

    Negatively charged nitrogen-vacancy (NV-) center ensembles in diamond have proved to have great potential for use in highly sensitive, small-package solid-state quantum sensors. One way to improve sensitivity is to produce a high-density NV- center ensemble on a large scale with a long coherence lifetime. In this work, the NV- center ensemble is prepared in type-Ib diamond using high energy electron irradiation and annealing, and the transverse relaxation time of the ensemble—T 2—was systematically investigated as a function of the irradiation electron dose and annealing time. Dynamical decoupling sequences were used to characterize T 2. To overcome the problem of low signal-to-noise ratio in T 2 measurement, a coupled strip lines waveguide was used to synchronously manipulate NV- centers along three directions to improve fluorescence signal contrast. Finally, NV- center ensembles with a high concentration of roughly 1015 mm-3 were manipulated within a ~10 µs coherence time. By applying a multi-coupled strip-lines waveguide to improve the effective volume of the diamond, a sub-femtotesla sensitivity for AC field magnetometry can be achieved. The long-coherence high-density large-scale NV- center ensemble in diamond means that types of room-temperature micro-sized solid-state quantum sensors with ultra-high sensitivity can be further developed in the near future.

  9. Photocatalytic activity enhancement by electron irradiation of fullerene derivative-TiO2 nanoparticles under visible light illumination

    International Nuclear Information System (INIS)

    Cho, Sung Oh; Yoo, Seung Hwa; Lee, Dong Hoon

    2011-01-01

    Photocatalytic decomposition of aqueous organic pollutant have attracted many interest due to its simple, low cost, and clean procedure. By only using the sun light and photocatalyst, especially TiO 2 nanoparticles based systems have been extensively studied and commercialized for real life application. However, TiO 2 has a critical disadvantage, which can only absorb the ultra-violet region of the solar spectrum, due to the large band-gap of 3.2 eV. Extensive studies have been preformed to expand the light absorption of TiO 2 to the visible light region of the solar spectrum, by doping metal or non-metal elements on TiO 2 or attaching small band-gap semiconductors on TiO 2 . In this study, a fullerene derivative 1-(3- carboxypropyl)-1-phenyl[6,6]C 61 (PCBA) was attached on the surface of TiO 2 nanoparticles, and its photocatalytic activity was evaluated by decomposition of methyl orange under visible light. Furthermore, enhancement in the photocatalytic activity of these nanoparticles by electron irradiation is discussed

  10. Single Photon Sources in Silicon Carbide

    International Nuclear Information System (INIS)

    Brett Johnson

    2014-01-01

    Single photon sources in semiconductors are highly sought after as they constitute the building blocks of a diverse range of emerging technologies such as integrated quantum information processing, quantum metrology and quantum photonics. In this presentation, we show the first observation of single photon emission from deep level defects in silicon carbide (SiC). The single photon emission is photo-stable at room temperature and surprisingly bright. This represents an exciting alternative to diamond color centers since SiC possesses well-established growth and device engineering protocols. The defect is assigned to the carbon vacancy-antisite pair which gives rise to the AB photoluminescence lines. We discuss its photo-physical properties and their fabrication via electron irradiation. Preliminary measurements on 3C SiC nano-structures will also be discussed. (author)

  11. Nanoporous gold synthesized by plasma-assisted inert gas condensation: room temperature sintering, nanoscale mechanical properties and stability against high energy electron irradiation

    Science.gov (United States)

    Weyrauch, S.; Wagner, C.; Suckfuell, C.; Lotnyk, A.; Knolle, W.; Gerlach, J. W.; Mayr, S. G.

    2018-02-01

    With a plasma assisted gas condensation system it is possible to achieve high-purity nanoporous Au (np-Au) structures with minimal contaminations and impurities. The structures consist of single Au-nanoparticles, which partially sintered together due to their high surface to volume ratio. Through electron microscopy investigations a porosity  >50% with ligament sizes between 20-30 nm was revealed. The elastic modulus of the np-Au was determined via peak force quantitative nanomechanical mapping and resulted in values of 7.5  ±  1.5 GPa. The presented structures partially sintered at room temperature, but proved to be stable to electron irradiation with energies of 7 MeV up to doses of 100 MGy. The electron irradiation stability opens the venue for electron assisted functionalization with biomolecules.

  12. DEGRADATION OF SOLAR CELLS PARAMETERS FABRICATED ON THE BASIS OF Cu(In,GaSe2 SEMICONDUCTOR SOLID SOLUTIONS UNDER ELECTRON IRRADIATION

    Directory of Open Access Journals (Sweden)

    A. V. Mudryi

    2014-01-01

    Full Text Available Polycrystalline Cu(In,GaSe2 (CIGS thin films were grown on molybdenum-coated soda-lime glass substrates by co-evaporation of the elements Cu, In, Ga and Se from independent sources. The effect of electron irradiation on the electrical and optical properties of CIGS thin films and solar cells with the structure ZnO:Al/i-ZnO/CdS/CIGS/Mo/glass was studied. It was found that the degradation of the electrical parameters of solar cells (open-circuit voltage, short-circuit current density and efficiency took place due to the formation of radiation defects (recombination centers with deep energy levels in the bandgap of CIGS. It was revealed that after electron irradiation intensity of near band-edge luminescence band at about 1,1 eV decreased considerably and bands of luminescence with maxima at 0,93 and 0,75 eV appeared.

  13. Dissolution and growth of precipitates under electron irradiation in an Al-11.8 at % Zn alloy by small angle neutron scattering

    International Nuclear Information System (INIS)

    Baig, M.R.

    1995-01-01

    Dissolution and growth of precipitates in a room temperature aged Al-11.8 at % Zn alloy have been studied under electron irradiation using small angle neutron scattering (SANS). A series of electron irradiations were performed on each sample and SANS measurements were made on each irradiation. In general for low doses the results show an initial decrease in the magnitude of the scattering, but associated with an increase in the precipitate size. This is followed on prolonged irradiation by an increase in the magnitude of the scattering with a continued increase in precipitate size. It is believed, that at low doses some precipitate grow in size but others may dissolve in the matrix, which then becomes supersaturated. With the enhanced rate of diffusion as a result of the irradiation, the remaining precipitates grow rapidly. As the supersaturation reduces, a coarsening mechanism takes over, via a radiation enhanced diffusion mechanism

  14. The study of composition changes in thin film coatings of Ge-As-Se type under relativistic electron irradiation by means of electron Auger spectroscopy

    International Nuclear Information System (INIS)

    Kesler, L.G.; Dovgoshej, N.I.; Savchenko, N.D.

    1991-01-01

    Data on the influence of relativistic electrons on depth profile of Ge 33 As 12 Se 55 films were obtained for the first time. It was established that the most sufficient change of element composition of films in result of electron irradiation took place in the surface layer and on film-sublayer interface. It can be explained by increase of diffusion of impurities and free atoms

  15. Electron Irradiation of Conjunctival Lymphoma-Monte Carlo Simulation of the Minute Dose Distribution and Technique Optimization

    Energy Technology Data Exchange (ETDEWEB)

    Brualla, Lorenzo, E-mail: lorenzo.brualla@uni-due.de [NCTeam, Strahlenklinik, Universitaetsklinikum Essen, Essen (Germany); Zaragoza, Francisco J.; Sempau, Josep [Institut de Tecniques Energetiques, Universitat Politecnica de Catalunya, Barcelona (Spain); Wittig, Andrea [Department of Radiation Oncology, University Hospital Giessen and Marburg, Philipps-University Marburg, Marburg (Germany); Sauerwein, Wolfgang [NCTeam, Strahlenklinik, Universitaetsklinikum Essen, Essen (Germany)

    2012-07-15

    Purpose: External beam radiotherapy is the only conservative curative approach for Stage I non-Hodgkin lymphomas of the conjunctiva. The target volume is geometrically complex because it includes the eyeball and lid conjunctiva. Furthermore, the target volume is adjacent to radiosensitive structures, including the lens, lacrimal glands, cornea, retina, and papilla. The radiotherapy planning and optimization requires accurate calculation of the dose in these anatomical structures that are much smaller than the structures traditionally considered in radiotherapy. Neither conventional treatment planning systems nor dosimetric measurements can reliably determine the dose distribution in these small irradiated volumes. Methods and Materials: The Monte Carlo simulations of a Varian Clinac 2100 C/D and human eye were performed using the PENELOPE and PENEASYLINAC codes. Dose distributions and dose volume histograms were calculated for the bulbar conjunctiva, cornea, lens, retina, papilla, lacrimal gland, and anterior and posterior hemispheres. Results: The simulated results allow choosing the most adequate treatment setup configuration, which is an electron beam energy of 6 MeV with additional bolus and collimation by a cerrobend block with a central cylindrical hole of 3.0 cm diameter and central cylindrical rod of 1.0 cm diameter. Conclusions: Monte Carlo simulation is a useful method to calculate the minute dose distribution in ocular tissue and to optimize the electron irradiation technique in highly critical structures. Using a voxelized eye phantom based on patient computed tomography images, the dose distribution can be estimated with a standard statistical uncertainty of less than 2.4% in 3 min using a computing cluster with 30 cores, which makes this planning technique clinically relevant.

  16. Heats of adsorption of Pb on pristine and electron-irradiated poly(methyl methacrylate) by microcalorimetry

    Science.gov (United States)

    Diaz, S. F.; Zhu, J. F.; Harris, J. J. W.; Goetsch, P.; Merte, L. R.; Campbell, Charles T.

    2005-12-01

    The heat of adsorption and sticking probability were measured for Pb gas atoms adsorbing onto clean poly(methyl methacrylate) (PMMA) and electron-irradiated PMMA. The Pb atoms interact very weakly with the outgassed pristine PMMA surface, with a sticking probability of 0.02 ± 0.02. They deposit a heat into the PMMA of 12.7 ± 0.7 kJ/mol of dosed Pb, independent of Pb exposure up to 10 ML. This is slightly less than would be expected even if no Pb atoms stuck to the PMMA, but if they completely thermally accommodated to the substrate temperature during their collision with the surface. This proves that thermal accommodation is incomplete, highlighting the weakness of the Pb-PMMA interaction. Damaging the PMMA surface with electrons causes an increase in reactivity with Pb, as shown by increases in the initial heat of adsorption up to 134.0 ± 0.7 kJ/mol and the initial sticking probability up to 0.51 ± 0.01. These both increase with increasing coverage toward the values expected for Pb adsorption onto a bulk Pb surface with coverage dependences suggesting that metal islands nucleate at electron-induced defects, and grow into large 3D islands of low number density. This is the first calorimetric measurement of any metal adsorption energy onto any polymer surface wherein the sticking probability of the metal also was measured. The PMMA film was spin coated directly onto the heat detector, a pyroelectric polymer foil (polyvinylidene fluoride—PVDF) precoated on both sides with thin metal electrodes. It provides a detector sensitivity of ˜450 V/J with a pulse-to-pulse standard deviation of 1.2 kJ/mol and absolute accuracy within 2%.

  17. SU-F-T-248: FMEA Risk Analysis Implementation (AAPM TG-100) in Total Skin Electron Irradiation Technique

    Energy Technology Data Exchange (ETDEWEB)

    Ibanez-Rosello, B; Bautista-Ballesteros, J; Bonaque, J [Hospital La Fe, Valencia, Valencia (Spain); Perez-Calatayud, J [Hospital La Fe, Valencia, Valencia (Spain); Clinica Benidorm, Benidorm, Alicante (Spain); Gonzalez-Sanchis, A; Lopez-Torrecilla, J; Brualla-Gonzalez, L; Garcia-Hernandez, T; Vicedo-Gonzalez, A; Granero, D; Serrano, A; Borderia, B; Solera, C [Hospital General ERESA, Valencia, Valencia (Spain); Rosello, J [Hospital General ERESA, Valencia, Valencia (Spain); Universidad de Valencia, Valencia, Valencia (Spain)

    2016-06-15

    Purpose: Total Skin Electron Irradiation (TSEI) is a radiotherapy treatment which involves irradiating the entire body surface as homogeneously as possible. It is composed of an extensive multi-step technique in which quality management requires high consumption of resources and a fluid communication between the involved staff, necessary to improve the safety of treatment. The TG-100 proposes a new perspective of quality management in radiotherapy, presenting a systematic method of risk analysis throughout the global flow of the stages through the patient. The purpose of this work has been to apply TG-100 approach to the TSEI procedure in our institution. Methods: A multidisciplinary team specifically targeting TSEI procedure was formed, that met regularly and jointly developed the process map (PM), following TG-100 guidelines of the AAPM. This PM is a visual representation of the temporal flow of steps through the patient since start until the end of his stay in the radiotherapy service. Results: This is the first stage of the full risk analysis, which is being carried out in the center. The PM provides an overview of the process and facilitates the understanding of the team members who will participate in the subsequent analysis. Currently, the team is implementing the analysis of failure modes and effects (FMEA). The failure modes of each of the steps have been identified and assessors are assigning a value of severity (S), frequency of occurrence (O) and lack of detection (D) individually. To our knowledge, this is the first PM made for the TSEI. The developed PM can be useful for those centers that intend to implement the TSEI technique. Conclusion: The PM of TSEI technique has been established, as the first stage of full risk analysis, performed in a reference center in this treatment.

  18. Electrical properties of ferroelectric YMnO3 films deposited on n-type Si(111) substrates

    International Nuclear Information System (INIS)

    Parashar, S; Raju, A R; Rao, C N R; Victor, P; Krupanidhi, S B

    2003-01-01

    YMnO 3 thin films were grown on an n-type Si substrate by nebulized spray pyrolysis in the metal-ferroelectric-semiconductor (MFS) configuration. The capacitance-voltage characteristics of the film in the MFS structure exhibit hysteretic behaviour consistent with the polarization charge switching direction, with the memory window decreasing with increase in temperature. The density of the interface states decreases with increasing annealing temperature. Mapping of the silicon energy band gap with the interface states has been carried out. The leakage current, measured in the accumulation region, is lower in well-crystallized thin films and obeys a space-charge limited conduction mechanism. The calculated activation energy from the dc leakage current characteristics of the Arrhenius plot reveals that the activation energy corresponds to oxygen vacancy motion

  19. Cryogenic scintillation properties of n-type GaAs for the direct detection of MeV/c2 dark matter

    Science.gov (United States)

    Derenzo, S.; Bourret, E.; Hanrahan, S.; Bizarri, G.

    2018-03-01

    This paper is the first report of n-type GaAs as a cryogenic scintillation radiation detector for the detection of electron recoils from interacting dark matter (DM) particles in the poorly explored MeV/c2 mass range. Seven GaAs samples from two commercial suppliers and with different silicon and boron concentrations were studied for their low temperature optical and scintillation properties. All samples are n-type even at low temperatures and exhibit emission between silicon donors and boron acceptors that peaks at 1.33 eV (930 nm). The lowest excitation band peaks at 1.44 eV (860 nm), and the overlap between the emission and excitation bands is small. The X-ray excited luminosities range from 7 to 43 photons/keV. Thermally stimulated luminescence measurements show that n-type GaAs does not accumulate metastable radiative states that could cause afterglow. Further development and use with cryogenic photodetectors promises a remarkable combination of large target size, ultra-low backgrounds, and a sensitivity to electron recoils of a few eV that would be produced by DM particles as light as a few MeV/c2.

  20. Characterization of thermal, optical and carrier transport properties of porous silicon using the photoacoustic technique

    International Nuclear Information System (INIS)

    Sheng, Chan Kok; Mahmood Mat Yunus, W.; Yunus, Wan Md. Zin Wan; Abidin Talib, Zainal; Kassim, Anuar

    2008-01-01

    In this work, the porous silicon layer was prepared by the electrochemical anodization etching process on n-type and p-type silicon wafers. The formation of the porous layer has been identified by photoluminescence and SEM measurements. The optical absorption, energy gap, carrier transport and thermal properties of n-type and p-type porous silicon layers were investigated by analyzing the experimental data from photoacoustic measurements. The values of thermal diffusivity, energy gap and carrier transport properties have been found to be porosity-dependent. The energy band gap of n-type and p-type porous silicon layers was higher than the energy band gap obtained for silicon substrate (1.11 eV). In the range of porosity (50-76%) of the studies, our results found that the optical band-gap energy of p-type porous silicon (1.80-2.00 eV) was higher than that of the n-type porous silicon layer (1.70-1.86 eV). The thermal diffusivity value of the n-type porous layer was found to be higher than that of the p-type and both were observed to increase linearly with increasing layer porosity

  1. Study of araldite in edge protection of n-type and p-type surface barrier detectors

    International Nuclear Information System (INIS)

    Alencar, M.A.V.; Jesus, E.F.O.; Lopes, R.T.

    1995-01-01

    The aim of this work is the realization of a comparative study between the surface barrier detectors performance n and type using the epoxy resin Araldite as edge protection material with the purpose of determining which type of detector (n or p) the use of Araldite is more indicated. The surface barrier detectors were constructed using n and p type silicon wafer with resistivity of 3350Ω.cm and 5850 Ω.cm respectively. In the n type detectors, the metals used as ohmic and rectifier contacts were the Al and Au respectively, while in the p type detectors, the ohmic and rectifier contacts were Au and Al. All metallic contacts were done by evaporation in high vacuum (∼10 -4 Torr) and with deposit of 40 μm/cm 2 . The obtained results for the detectors (reverse current of -350nA and resolution from 21 to 26 keV for p type detectors and reserve current of 1μA and resolution from 44 to 49 keV for n type detectors) tend to demonstrate that use of epoxy resin Araldite in the edge protection is more indicated to p type surface barrier detectors. (author). 3 refs., 4 figs., 1 tab

  2. Structural studies of n-type nc-Si-QD thin films for nc-Si solar cells

    Science.gov (United States)

    Das, Debajyoti; Kar, Debjit

    2017-12-01

    A wide optical gap nanocrystalline silicon (nc-Si) dielectric material is a basic requirement at the n-type window layer of nc-Si solar cells in thin film n-i-p structure on glass substrates. Taking advantage of the high atomic-H density inherent to the planar inductively coupled low-pressure (SiH4 + CH4)-plasma, development of an analogous material in P-doped nc-Si-QD/a-SiC:H network has been tried. Incorporation of C in the Si-network extracted from the CH4 widens the optical band gap; however, at enhanced PH3-dilution of the plasma spontaneous miniaturization of the nc-Si-QDs below the dimension of Bohr radius (∼4.5 nm) further enhances the band gap by virtue of the quantum size effect. At increased flow rate of PH3, dopant induced continuous amorphization of the intrinsic crystalline network is counterbalanced by the further crystallization promoted by the supplementary atomic-H extracted from PH3 (1% in H2) in the plasma, eventually holding a moderately high degree of crystallinity. The n-type wide band gap (∼1.93 eV) window layer with nc-Si-QDs in adequate volume fraction (∼52%) could furthermore be instrumental as an effective seed layer for advancing sequential crystallization in the i-layer of nc-Si solar cells with n-i-p structure in superstrate configuration.

  3. On the formation of the L-centre in silicon during heat treatment in the temperature range 205-285 deg. C

    International Nuclear Information System (INIS)

    Mikelsen, M; Monakhov, E V; Avset, B S; Svensson, B G

    2006-01-01

    Annealing kinetics of electron-irradiation induced defects in n-type diffusion oxygenated float-zone silicon has been studied in the temperature-range 205-285 deg. C. Previous deep level transient spectroscopy (DLTS) reports have established that an observed shift in the positions of two peaks related to the divacancy (V 2 ), is due to the annealing of the divacancy and the formation of the divacancy-oxygen complex (V 2 O). In parallel to this transformation from V 2 to V 2 O, a new defect of unknown identity, the so-called L-centre, forms with a level located at 0.36 eV below the conduction band edge. The L-level has a first order formation-kinetics in the temperature region studied; at 245-285 deg. C the formation rate is very similar to the annealing rate of V 2 , while at lower temperatures the formation rate becomes lower with a relative difference by a factor two at 205 deg. C. The Arrhenius plot for the L-level formation rate is not a straight line, indicating that the formation is controlled by at least two different processes. Kinetic modelling shows that the experimental data can be reproduced by a sequence of defect dissociation and migration, where the former limits at low temperatures (activation energy ∼1.75 eV) and the latter at high temperatures (E a ∼1.0 eV). Based on these results and other findings, the identity of the L-centre is discussed

  4. Evaluation of prototype silicon drift detectors

    International Nuclear Information System (INIS)

    Ellison, J.; Hall, G.; Roe, S.; Lucas, A.

    1988-01-01

    Operating characteristics of several prototypes of silicon drift detectors are investigated. Detectors are made of unpolished silicon produced by the zone melting method and characterized by n-type conductivity and specific resistance of 3.6-4.6 kOhmxcm. The detectors comprise 40 parallel bands of 200 μm width and 1 cm length separated by 50 μm intervals. Data characterizing the potential distribution near anodes under the operating bias voltage, dependences of capacities and leakage as well as the detector space resolution

  5. Anomalous radial and angular strain relaxation around dilute p-, isoelectronic-, and n-type dopants in Si crystal

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Mingshu [School of Physical Sciences, University of Science and Technology of China, Hefei, Anhui Province 230026 (China); Dong, Juncai, E-mail: dongjc@ihep.ac.cn [Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China); Chen, Dongliang [Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China)

    2017-02-01

    Doping is widely applied in yielding desirable properties and functions in silicon technology; thus, fully understanding the relaxation mechanism for lattice-mismatch strain is of fundamental importance. Here we systematically study the local lattice distortion near dilute IIIA-, IVA-, and VA-group substitutional dopants in Si crystal using density functional theory, and anomalous radial and angular strain relaxation modes are first revealed. Both the nearest-neighbor (NN) bond-distances and the tetrahedral bond-angles are found to exhibit completely opposite dependence on the electronic configurations for the low Z (Z<26) and high Z (Z>26) dopants. More surprisingly, negative and positive angular shifts for the second NN twelve Si2 atoms are unveiled surrounding the p- and n-type dopants, respectively. While electron localization function shows that the doped hole and electron are highly localized near the dopants, hence being responsible for the abnormal angular shifts, a universal radial strain relaxation mechanism dominated by a competition of the Coulomb interactions among the ion-core, bond-charge, and the localized hole or electron is also proposed. These findings may prove to be instrumental in precise design of silicon-based solotronics.

  6. Study of porous silicon morphologies for electron transport

    International Nuclear Information System (INIS)

    Pang, Y.; Demroff, H.P.; Elliott, T.S.; Lee, B.; Lu, J.; Madduri, V.B.; Mazumdar, T.K.; McIntyre, P.M.; Smith, D.D.; Trost, H.J.

    1993-01-01

    Field emitter devices are being developed for the gigatron, a high-efficiency, high frequency and high power microwave source. One approach being investigated is porous silicon, where a dense matrix of nanoscopic pores are galvanically etched into a silicon surface. In the present paper pore morphologies were used to characterize these materials. Using of Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) images of both N-type and P-type porous layers, it is found that pores propagate along the crystallographic direction, perpendicular to the surface of (100) silicon. Distinct morphologies were observed systematically near the surface, in the main bulk and near the bottom of N-type (100) silicon lift-off samples. It is seen that the pores are not cylindrical but exhibit more or less approximately square cross sections. X-ray diffraction spectra and electron diffraction patterns verified that bulk porous silicon is still a single crystal. In addition, a Scanning Tunnelling Microscope (STM) and an Atomic Force Microscope (AFM) were successfully applied to image the 40 angstrom gold film structure which was coated upon a cooled porous silicon layer. By associating the morphology study with the measured emitting current density of the Oxidized Porous Silicon Field Emission Triode (OPSFET), techniques for the surface treatment of porous silicon will be optimized

  7. Photo and electroluminescence of porous silicon layers

    International Nuclear Information System (INIS)

    Keshmini, S.H.; Samadpour, S.; Haji-Ali, E.; Rokn-Abadi, M.R.

    1995-01-01

    Porous silicon (PSi) layers were prepared by both chemical and electrochemical methods on n- and p-type Si substrates. In the former technique, light emission was obtained from p-type and n-type samples. It was found that intense light illumination during the preparation process was essential for PSi formation on n-type substrates. An efficient electrochemical cell with some useful features was designed for electrochemical etching of silicon. Various preparation parameters were studied and photoluminescence emissions ranging from dark red to light blue were obtained from PSi samples prepared on p-type substrates. N-type samples produced emission ranging from dark red to orange yellow. Electroluminescence of porous silicon samples showed that the color of the emission was the same as the photoluminescence color of the sample, and its intensity and duration depended on the current density passed through the sample. The effects of exposure of samples to air, storage in vacuum and heat treatment in air on luminescence intensity of the samples and preparation of patterned porous layers were also studied. (author)

  8. Modification of Structure and Tribological Properties of the Surface Layer of Metal-Ceramic Composite under Electron Irradiation in the Plasmas of Inert Gases

    Science.gov (United States)

    Ovcharenko, V. E.; Ivanov, K. V.; Mohovikov, A. A.; Yu, B.; Xu, Yu; Zhong, L.

    2018-01-01

    Metal-ceramic composites are the main materials for high-load parts in tribomechanical systems. Modern approaches to extend the operation life of tribomechanical systems are based on increasing the strength and tribological properties of the surface layer having 100 to 200 microns in depth. The essential improvement of the properties occurs when high dispersed structure is formed in the surface layer using high-energy processing. As a result of the dispersed structure formation the more uniform distribution of elastic stresses takes place under mechanical or thermal action, the energy of stress concentrators emergence significantly increases and the probability of internal defects formation reduces. The promising method to form the dispersed structure in the surface layer is pulse electron irradiation in the plasmas of inert gases combining electron irradiation and ion bombardment in one process. The present work reports upon the effect of pulse electron irradiation in plasmas of different inert gases with different atomic mass and ionization energy on the structure and tribological properties of the surface layer of TiC/(Ni-Cr) metal-ceramic composite with the volume ratio of the component being 50:50. It is experimentally shown that high-dispersed heterophase structure with a fraction of nanosized particles is formed during the irradiation. Electron microscopy study reveals that refining of the initial coarse TiC particles occurs via their dissolution in the molten metal binder followed by the precipitation of secondary fine particles in the interparticle layers of the binder. The depth of modified layer and the fraction of nanosized particles increase when the atomic number of the plasma gas increases and ionization energy decreases. The wear resistance of metal-ceramic composite improves in accordance to the formation of nanocrystalline structure in the surface layer.

  9. Electronically stimulated deep-center reactions in electron-irradiated InP: Comparison between experiment and recombination-enhancement theories

    International Nuclear Information System (INIS)

    Sibille, A.

    1987-01-01

    We present a detailed study of the recombination enhancement of several defect reactions involving the main deep centers in low-temperature electron-irradiated InP. A fairly good agreement is obtained with the Weeks-Tully-Kimerling theory for the activation energies of the enhanced process. On the other hand, a thorough investigation of a thermally and electronically stimulated defect transformation shows evidence that one major approximation (local vibrational equilibrium) fails, and that the recently proposed [H. Sumi, Phys. Rev. B 29, 4616 (1984)] mechanism of coherent recombination on deep centers is responsible for altered reaction rates at high injection levels

  10. High performance hybrid silicon micropillar solar cell based on light trapping characteristics of Cu nanoparticles

    Directory of Open Access Journals (Sweden)

    Yulong Zhang

    2018-05-01

    Full Text Available High performance silicon combined structure (micropillar with Cu nanoparticles solar cell has been synthesized from N-type silicon substrates based on the micropillar array. The combined structure solar cell exhibited higher short circuit current rather than the silicon miropillar solar cell, which the parameters of micropillar array are the same. Due to the Cu nanoparticles were decorated on the surface of silicon micropillar array, the photovoltaic properties of cells have been improved. In addition, the optimal efficiency of 11.5% was measured for the combined structure solar cell, which is better than the silicon micropillar cell.

  11. High performance hybrid silicon micropillar solar cell based on light trapping characteristics of Cu nanoparticles

    Science.gov (United States)

    Zhang, Yulong; Fan, Zhiqiang; Zhang, Weijia; Ma, Qiang; Jiang, Zhaoyi; Ma, Denghao

    2018-05-01

    High performance silicon combined structure (micropillar with Cu nanoparticles) solar cell has been synthesized from N-type silicon substrates based on the micropillar array. The combined structure solar cell exhibited higher short circuit current rather than the silicon miropillar solar cell, which the parameters of micropillar array are the same. Due to the Cu nanoparticles were decorated on the surface of silicon micropillar array, the photovoltaic properties of cells have been improved. In addition, the optimal efficiency of 11.5% was measured for the combined structure solar cell, which is better than the silicon micropillar cell.

  12. EPR- study of paramagnetic features of brown coal from Kiyakty coal deposit after mechanic activation and electron irradiation

    International Nuclear Information System (INIS)

    Ryabikin, Yu.A.; Zashkvara, O.V.; Popov, S.N.; Kairbekov, Zh.K.; Ershova, Zh.R.; Kupchishin, A.I.; Kovtunets, V.A.

    2003-01-01

    Full text: It is known that prospected coal resources exceed, at least by order of magnitude, petroleum reserves decreasing steeply at last time as a result of world oil consumption rise. In this connection the manufacture of different liquid products from coal, especially brown coal, is issue of the day. Liquid fuel yield depends on physical-chemical characteristics and their changes owing to preliminary chemical, mechanical and radiation treatment. In this paper some results of paramagnetic characteristic study of Kiyakty deposit coal as initial one as after its mechanical treatment and electron irradiation are presented. It is discovered that in Kiyakty coal there are, at least, two fractions differed in EPR line width and concentration of free radical states they contained. First fraction has EPR line width ΔH 1 =4-5 Oe and mean free radical states concentration N 1 = 2.4·10 17 sp/g. For samples of second fraction the EPR line width ΔH 2 = 6.6-7.2 Oe and N 2 = 1.8·10 18 sp/g are typical. Thus, in the second fraction the EPR line width and free radical states concentration are greater than in the first case. Besides free radical states in coal EPR signals were found from trivalent iron ions with g-factor approximated 2 and with g=4.3. It the signals with g=4.3, are practically identical for both fractions, their concentrations are neighbour and line width is ΔH 1 = 250 Oe, then for the lines near g=2.0 situation is markedly different. For the first fraction ΔH 1 = 800 Oe whereas for the second case two signals in this g-factor range are observed. The first signal has line width ΔH 1 = 550 Oe and g=l .97, the second is more wide with ΔH 1 = 1000 Oe and g=2.02. We cannot discover significant dependence of free radical states concentration on mechanic activation time. Obviously, life times of complementary free radical states generated in process of coal activation are very low. As Fe 3+ ions, for both fractions it is observed intensity growth of their

  13. Determination of Shear Deformation Potentials from the Free-Carrier Piezobirefringence in Germanium and Silicon

    DEFF Research Database (Denmark)

    Riskaer, Sven

    1966-01-01

    The present investigations of the free-carrier piezobirefringence phenomenon verify that in n-type germanium and silicon as well as in p-type silicon this effect can be ascribed to intraband transitions of the carriers. It is demonstrated how a combined investigation of the low-stress and high......-stress piezobirefringence in these materials provides a direct and independent method for determining deformation-potential constants. For n-type germanium we obtain Ξu=18.0±0.5 eV, for n-type silicon Ξu=8.5±0.4 eV; for p-type silicon a rather crude analytical approximation yields b=-3.1 eV and d=-8.3 eV. Finally...

  14. Tuning the cathodoluminescence of porous silicon films

    International Nuclear Information System (INIS)

    Biaggi-Labiosa, A.; Fonseca, L.F.; Resto, O.; Balberg, I.

    2008-01-01

    We have obtained intense cathodoluminescence (CL) emission from electron beam modified porous silicon films by excitation with electrons with kinetic energies below 2 keV. Two types of CL emissions were observed, a stable one and a non-stable one. The first type is obtained in well-oxidized samples and is characterized by a spectral peak that is red shifted with respect to the photoluminescence (PL) peak. The physically interesting and technologically promising CL is however the CL that correlates closely with the PL. Tuning of this CL emission was achieved by controlling the average size of the nanostructure thus showing that the origin of this CL emission is associated with the quantum confinement and the surface chemistry effects that are known to exist in the porous silicon system. We also found that the electron bombardment causes microscale morphological modifications of the films, but the nanoscale features appear to be unchanged. The structural changes are manifested by the increase in the density of the nanoparticles which explains the significant enhancement of the PL that follows the electron irradiation

  15. Radiation hardness of silicon detectors for collider experiments

    International Nuclear Information System (INIS)

    Golutvin, I.; Cheremukhin, A.; Fefelova, E.

    1995-01-01

    The silicon planar detectors before and after fast neutron irradiation ( n o> = 1.35 MeV) at room temperature have been investigated. Maximal neutron fluence has been 8 · 10 13 cm -2 . The detectors have been manufactured of the high resistivity (1 : 10 k Ohm · cm) n-type float-zone silicon (FZ-Si) with the orientation supplied by two different producers: WACKER CHEMITRONIC and Zaporojie Titanium-Magnesium Factory (ZTMF). The influence of fast neutron irradiation of the main parameters of the starting silicon before the technological high temperature treatment has been investigated as well. 30 refs., 17 figs., 5 tabs

  16. Silicon Qubits

    Energy Technology Data Exchange (ETDEWEB)

    Ladd, Thaddeus D. [HRL Laboratories, LLC, Malibu, CA (United States); Carroll, Malcolm S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2018-02-28

    Silicon is a promising material candidate for qubits due to the combination of worldwide infrastructure in silicon microelectronics fabrication and the capability to drastically reduce decohering noise channels via chemical purification and isotopic enhancement. However, a variety of challenges in fabrication, control, and measurement leaves unclear the best strategy for fully realizing this material’s future potential. In this article, we survey three basic qubit types: those based on substitutional donors, on metal-oxide-semiconductor (MOS) structures, and on Si/SiGe heterostructures. We also discuss the multiple schema used to define and control Si qubits, which may exploit the manipulation and detection of a single electron charge, the state of a single electron spin, or the collective states of multiple spins. Far from being comprehensive, this article provides a brief orientation to the rapidly evolving field of silicon qubit technology and is intended as an approachable entry point for a researcher new to this field.

  17. Annealing study of main electron irradiation-induced defects (H4 and H5) in P-In P using DLTS technique

    International Nuclear Information System (INIS)

    Massarani, B.; Awad, F.; Kaaka, M.

    1992-12-01

    Thermal annealing of the two hole traps H 4 and H 5 in room-temperature electron-irradiated In P Schottky diodes was investigated. Electron-irradiation energy ranging between 0.15 and 1.5 MeV with doses ranging between 5 x 10 14 and 10 16 e/cm 2 . DLTS technique with double-phase detector was used in this study. Contrary to what is generally admitted, we found that H 5 anneals out at about 150 C o with an activation energy of 1 eV. We have shown that H 4 is a complex defect having two components that we could resolve. While the first one, having lower emission cross section and higher capture cross section with ΔE = 0.37 eV anneals out at about 110 C o . The other component, with ΔE = 0.50 eV is thermally stable even above 170 C o . (author). 13 refs., 17 figs., 2 tabs

  18. Ambient-temperature diffusion and gettering of Pt atoms in GaN with surface defect region under 60Co gamma or MeV electron irradiation

    Science.gov (United States)

    Hou, Ruixiang; Li, Lei; Fang, Xin; Xie, Ziang; Li, Shuti; Song, Weidong; Huang, Rong; Zhang, Jicai; Huang, Zengli; Li, Qiangjie; Xu, Wanjing; Fu, Engang; Qin, G. G.

    2018-01-01

    Generally, the diffusion and gettering of impurities in GaN needs high temperature. Calculated with the ambient-temperature extrapolation value of the high temperature diffusivity of Pt atoms in GaN reported in literature, the time required for Pt atoms diffusing 1 nm in GaN at ambient temperature is about 19 years. Therefore, the ambient-temperature diffusion and gettering of Pt atoms in GaN can hardly be observed. In this work, the ambient-temperature diffusion and gettering of Pt atoms in GaN is reported for the first time. It is demonstrated by use of secondary ion mass spectroscopy that in the condition of introducing a defect region on the GaN film surface by plasma, and subsequently, irradiated by 60Co gamma-ray or 3 MeV electrons, the ambient-temperature diffusion and gettering of Pt atoms in GaN can be detected. It is more obvious with larger irradiation dose and higher plasma power. With a similar surface defect region, the ambient-temperature diffusion and gettering of Pt atoms in GaN stimulated by 3 MeV electron irradiation is more marked than that stimulated by gamma irradiation. The physical mechanism of ambient-temperature diffusion and gettering of Pt atoms in a GaN film with a surface defect region stimulated by gamma or MeV electron irradiation is discussed.

  19. Charging kinetics in virgin and 1 MeV-electron irradiated yttria-stabilized zirconia in the 300-1000 K range

    International Nuclear Information System (INIS)

    Thome, T.; Braga, D.; Blaise, G.; Cousty, J.; Pham Van, L.; Costantini, J.M.

    2006-01-01

    A study performed with a dedicated scanning electron microscope (SEM) on the surface electrical properties of (1 0 0)-oriented yttria-stabilized zirconia (YSZ) single crystals irradiated with 1 MeV electrons is presented. When compared with virgin YSZ, the 1 MeV-irradiated YSZ shows a decrease of the intrinsic total electron emission coefficient σ 0 and an increase of the time constant τ associated with the charging kinetics of the material at room temperature. These measurements performed with the SEM beam at 10 keV indicate that the defects induced by the 1 MeV-electron irradiation generate a positive electric field of the order of 0.5 x 10 6 V/m at a depth of about 1 μm that prevents electrons to escape. When the SEM beam with a 1.1 keV energy is used, a smaller field (∼0.5 x 10 3 V/m) is detected closer to the surface (∼20 nm). The fading of these fields during the thermal annealing in the 400-1000 K temperature range provides information on the nature of defects induced by the 1 MeV-electron irradiation

  20. Analysis of thermal detrapping of holes created by electron irradiation in high purity amorphous SiO_2 using the induced and secondary current measurements

    International Nuclear Information System (INIS)

    Said, K.; Moya, G.; Si Ahmed, A.; Damamme, G.; Kallel, A.

    2016-01-01

    Graphical abstract: - Highlights: • Positive charging of high purity amorphous SiO_2 achieved by electron irradiation in a specially equipped scanning electron microscope. • Quantity of detrapped holes evaluated via measurements of induced and secondary electron currents. • Study of isothermal detrapping for different temperatures (300–663 K). • Analysis of the hole detrapping via a first order kinetics. • Evaluation of the hole detrapping parameters (activation energy and frequency factor). - Abstract: Isothermal detrapping of holes after electron irradiation (using a SEM) in high purity amorphous SiO_2 is evaluated at different temperatures (in the range 300–663 K) by means of the induced and secondary current measurements. In order to single out the hole detrapping, the specific charging conditions (1 keV defocused electron beam of low density) leading to positive charging are adopted. The thermal detrapping, which stems from a single trap, begins at 523 K and is completed at 663 K. After annealing in air at 973 K during 48 h, two detrapping stages are revealed: the former is connected with an additional shallow trap, while the latter requires temperatures above 663 K for a complete detrapping. The first order kinetics describes reasonably well the detrapping process. The frequency factors (near 10"1"0 s"−"1) and the activation energies (about 1.6 eV) deduced from this analysis could be assigned, respectively, to the relaxation connected to detrapping and to the trap energy level of the charged oxygen vacancy.

  1. Doping of silicon carbide by ion implantation

    International Nuclear Information System (INIS)

    Gimbert, J.

    1999-01-01

    It appeared that in some fields, as the hostile environments (high temperature or irradiation), the silicon compounds showed limitations resulting from the electrical and mechanical properties. Doping of 4H and 6H silicon carbide by ion implantation is studied from a physicochemical and electrical point of view. It is necessary to obtain n-type and p-type material to realize high power and/or high frequency devices, such as MESFETs and Schottky diodes. First, physical and electrical properties of silicon carbide are presented and the interest of developing a process technology on this material is emphasised. Then, physical characteristics of ion implantation and particularly classical dopant implantation, such as nitrogen, for n-type doping, and aluminium and boron, for p-type doping are described. Results with these dopants are presented and analysed. Optimal conditions are extracted from these experiences so as to obtain a good crystal quality and a surface state allowing device fabrication. Electrical conduction is then described in the 4H and 6H-SiC polytypes. Freezing of free carriers and scattering processes are described. Electrical measurements are carried out using Hall effect on Van der Panw test patterns, and 4 point probe method are used to draw the type of the material, free carrier concentrations, resistivity and mobility of the implanted doped layers. These results are commented and compared to the theoretical analysis. The influence of the technological process on electrical conduction is studied in view of fabricating implanted silicon carbide devices. (author)

  2. MOS structures containing silicon nanoparticles for memory device applications

    International Nuclear Information System (INIS)

    Nedev, N; Zlatev, R; Nesheva, D; Manolov, E; Levi, Z; Brueggemann, R; Meier, S

    2008-01-01

    Metal-oxide-silicon structures containing layers with amorphous or crystalline silicon nanoparticles in a silicon oxide matrix are fabricated by sequential physical vapour deposition of SiO x (x = 1.15) and RF sputtering of SiO 2 on n-type crystalline silicon, followed by high temperature annealing in an inert gas ambient. Depending on the annealing temperature, 700 deg. C or 1000 deg. C, amorphous or crystalline silicon nanoparticles are formed in the silicon oxide matrix. The annealing process is used not only for growing nanoparticles but also to form a dielectric layer with tunnelling thickness at the silicon/insulator interface. High frequency C-V measurements demonstrate that both types of structures can be charged negatively or positively by applying a positive or negative voltage on the gate. The structures with amorphous silicon nanoparticles show several important advantages compared to the nanocrystal ones, such as lower defect density at the interface between the crystalline silicon wafer and the tunnel silicon oxide, better retention characteristics and better reliability

  3. Electrical activation of phosphorus in silicon

    International Nuclear Information System (INIS)

    Goh, K.E.J.; Oberbeck, L.; Simmons, M.Y.; Clark, R.G.

    2003-01-01

    Full text: We present studies of phosphorus δ-doping in silicon with a view to determining the degree of electrical activation of the dopants. These results have a direct consequence for the use of phosphorus as a qubit in a silicon-based quantum computer such as that proposed by Kane. Room temperature and 4 K Hall effect measurements are presented for phosphorus δ-doped layers grown in n-type silicon using two different methods. In the first method, the δ-layer was deposited by a phosphorus effusion cell in an MBE chamber. In the second method, the Si surface was dosed with phosphine gas and then annealed to 550 deg C to incorporate P into the substrate. In both methods, the P δ-doped layer was subsequently encapsulated by ∼25 nm of Si grown epitaxially. We discuss the implications of our results on the fabrication of the Kane quantum computer

  4. Porous silicon: Synthesis and optical properties

    International Nuclear Information System (INIS)

    Naddaf, M.; Awad, F.

    2006-01-01

    Formation of porous silicon by electrochemical etching method of both p and n-type single crystal silicon wafers in HF based solutions has been performed by using three different modes. In addition to DC and pulsed voltage, a novel etching mode is developed to prepare light-emitting porous silicon by applying and holding-up a voltage in gradient steps form periodically, between the silicon wafer and a graphite electrode. Under same equivalent etching conditions, periodic gradient steps voltage etching can yield a porous silicon layer with stronger photoluminescence intensity and blue shift than the porous silicon layer prepared by DC or pulsed voltage etching. It has been found that the holding-up of the applied voltage during the etching process for defined interval of time is another significant future of this method, which highly affects the blue shift. This can be used for tailoring a porous layer with novel properties. The actual mechanism behind the blue shift is not clear exactly, even the experimental observation of atomic force microscope and purist measurements in support with quantum confinement model. It has been seen also from Fourier Transform Infrared study that interplays between O-Si-H and Si-H bond intensities play key role in deciding the efficiency of photoluminescence emission. Study of relative humidity sensing and photonic crystal properties of pours silicon samples has confirmed the advantages of the new adopted etching mode. The sensitivity at room temperature of porous silicon prepared by periodic gradient steps voltage etching was found to be about 70% as compared to 51% and 45% for the porous silicon prepared by DC and pulsed voltage etching, respectively. (author)

  5. Porous silicon: Synthesis and optical properties

    International Nuclear Information System (INIS)

    Naddaf, M.; Awad, F.

    2006-06-01

    Formation of porous silicon by electrochemical etching method of both p and n-type single crystal silicon wafers in HF based solutions has been performed by using three different modes. In addition to DC and pulsed voltage, a novel etching mode is developed to prepare light-emitting porous silicon by applying and holding-up a voltage in gradient steps form periodically, between the silicon wafer and a graphite electrode. Under same equivalent etching conditions, periodic gradient steps voltage etching can yield a porous silicon layer with stronger photoluminescence intensity and blue shift than the porous silicon layer prepared by DC or pulsed voltage etching. It has been found that the holding-up of the applied voltage during the etching process for defined interval of time is another significant future of this method, which highly affects the blue shift. This can be used for tailoring a porous layer with novel properties. The actual mechanism behind the blue shift is not clear exactly, even the experimental observation of atomic force microscope and purist measurements in support with quantum confinement model. It has been seen also from Fourier Transform Infrared study that interplays between O-Si-H and Si-H bond intensities play key role in deciding the efficiency of photoluminescence emission. Study of relative humidity sensing and photonic crystal properties of pours silicon samples has confirmed the advantages of the new adopted etching mode. The sensitivity at room temperature of porous silicon prepared by periodic gradient steps voltage etching was found to be about 70% as compared to 51% and 45% for the porous silicon prepared by DC and pulsed voltage etching, respectively. (author)

  6. The morphological effect of electron irradiation on the healing of skin wounds and skin grafts in the rat

    International Nuclear Information System (INIS)

    Wang, Q.

    1995-01-01

    Current oncological practice frequently uses pre-, intra- or post-operative radiotherapy/chemotherapy. Before such treatment can begin it is imperative to establish that satisfactory wound healing will occur. Many previous studies have examined the response of wound healing to ionizing and non-ionizing radiation. In general, clinical and experimental reports indicate that ionizing radiation produces poor to difficult healing of wounds, and can even prevent healing altogether. It is for this reason that the effect of radiation on wound repair has been a long standing concern for surgeons, radiotherapists and radiobiologists. Electron irradiation produces large differences in depth-dose distributions. This enables the delivery of a constant maximal dose throughout the superficial layer of tissue, for example, the total depth of skin, with less damage in deeper tissue layers, compared to that produced by the use of electromagnetic radiation such as X-rays. It is for this reason that electron beam irradiation has been selected as a radiation source for radiation of the graft bed. To date there have been few morphological examinations of the effect of electron radiation on the healing of skin wounds in rats. A review of the literature shows no information on the use of radiation of the graft bed in skin graft surgery. In the present work the processes involved in wound repair in response to radiation were studied, morphologically, using two experimental models, incisional wounds combined with pre-operative radiation and skin autografts combined with radiation of the wound bed. In the latter case an unirradiated skin graft was surgically attached to an irradiated wound bed. Light microscopy (LM), backscattered electron imaging (BEI), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used as investigative tools. These repair processes include inflammation, re-epithelialization, re-formation of the dermo-epidermal junction, re

  7. The morphological effect of electron irradiation on the healing of skin wounds and skin grafts in the rat

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Q

    1995-07-01

    Current oncological practice frequently uses pre-, intra- or post-operative radiotherapy/chemotherapy. Before such treatment can begin it is imperative to establish that satisfactory wound healing will occur. Many previous studies have examined the response of wound healing to ionizing and non-ionizing radiation. In general, clinical and experimental reports indicate that ionizing radiation produces poor to difficult healing of wounds, and can even prevent healing altogether. It is for this reason that the effect of radiation on wound repair has been a long standing concern for surgeons, radiotherapists and radiobiologists. Electron irradiation produces large differences in depth-dose distributions. This enables the delivery of a constant maximal dose throughout the superficial layer of tissue, for example, the total depth of skin, with less damage in deeper tissue layers, compared to that produced by the use of electromagnetic radiation such as X-rays. It is for this reason that electron beam irradiation has been selected as a radiation source for radiation of the graft bed. To date there have been few morphological examinations of the effect of electron radiation on the healing of skin wounds in rats. A review of the literature shows no information on the use of radiation of the graft bed in skin graft surgery. In the present work the processes involved in wound repair in response to radiation were studied, morphologically, using two experimental models, incisional wounds combined with pre-operative radiation and skin autografts combined with radiation of the wound bed. In the latter case an unirradiated skin graft was surgically attached to an irradiated wound bed. Light microscopy (LM), backscattered electron imaging (BEI), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used as investigative tools. These repair processes include inflammation, re-epithelialization, re-formation of the dermo-epidermal junction, re

  8. SU-8 doped and encapsulated n-type graphene nanomesh with high air stability

    Energy Technology Data Exchange (ETDEWEB)

    Al-Mumen, Haider [Department of Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824 (United States); Department of Electrical Engineering, University of Babylon, Babylon (Iraq); Dong, Lixin; Li, Wen, E-mail: wenli@egr.msu.edu [Department of Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824 (United States)

    2013-12-02

    N-type doping of graphene with long-term chemical stability in air represents a significant challenge for practical application of graphene electronics. This paper reports a reversible doping method to achieve highly stable n-type graphene nanomeshes, in which the SU-8 photoresist simultaneously serves as an effective electron dopant and an excellent encapsulating layer. The chemically stable n-type characteristics of the SU-8 doped graphene were evaluated in air using their Raman spectra, electrical transport properties, and electronic band structures. The SU-8 doping does minimum damage to the hexagonal carbon lattice of graphene and is completely reversible by removing the uncrosslinked SU-8 resist.

  9. On the influence of extrinsic point defects on irradiation-induced point-defect distributions in silicon

    International Nuclear Information System (INIS)

    Vanhellemont, J.; Romano-Rodriguez, A.

    1994-01-01

    A semi-quantitative model describing the influence of interfaces and stress fields on {113}-defect generation in silicon during 1-MeV electron irradiation, is further developed to take into account also the role of extrinsic point defects. It is shown that the observed distribution of {113}-defects in high-flux electron-irradiated silicon and its dependence on irradiation temperature and dopant concentration can be understood by taking into account not only the influence of the surfaces and interfaces as sinks for intrinsic point defects but also the thermal stability of the bulk sinks for intrinsic point defects. In heavily doped silicon the bulk sinks are related with pairing reactions of the dopant atoms with the generated intrinsic point defects or related with enhanced recombination of vacancies and self-interstitials at extrinsic point defects. The obtained theoretical results are correlated with published experimental data on boron-and phosphorus-doped silicon and are illustrated with observations obtained by irradiating cross-section transmission electron microscopy samples of wafer with highly doped surface layers. (orig.)

  10. Influence of high-energy electron irradiation on field emission properties of multi-walled carbon nanotubes (MWCNTs) films

    Energy Technology Data Exchange (ETDEWEB)

    Patil, Sandip S. [Center for Advanced Studies in Material Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Koinkar, Pankaj M. [Center for International Cooperation in Engineering Education (CICEE), University of Tokushima, 2-1 Minami-Josanjima-Cho, Tokushima 770-8506 (Japan); Dhole, Sanjay D. [Center for Advanced Studies in Material Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); More, Mahendra A., E-mail: mam@physics.unipune.ac.i [Center for Advanced Studies in Material Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Murakami, Ri-ichi, E-mail: murakami@me.tokushima-u.ac.j [Department of Mechanical Engineering, University of Tokushima, 2-1 Minami-Josanjima-Cho, Tokushima 770-8506 (Japan)

    2011-04-15

    The effect of very high energy electron beam irradiation on the field emission characteristics of multi-walled carbon nanotubes (MWCNTs) has been investigated. The MWCNTs films deposited on silicon (Si) substrates were irradiated with 6 MeV electron beam at different fluence of 1x10{sup 15}, 2x10{sup 15} and 3x10{sup 15} electrons/cm{sup 2}. The irradiated films were characterized using scanning electron microscope (SEM) and micro-Raman spectrometer. The SEM analysis clearly revealed a change in surface morphology of the films upon irradiation. The Raman spectra of the irradiated films show structural damage caused by the interaction of high-energy electrons. The field emission studies were carried out in a planar diode configuration at the base pressure of {approx}1x10{sup -8} mbar. The values of the threshold field, required to draw an emission current density of {approx}1 {mu}A/cm{sup 2}, are found to be {approx}0.52, 1.9, 1.3 and 0.8 V/{mu}m for untreated, irradiated with fluence of 1x10{sup 15}, 2x10{sup 15} and 3x10{sup 15} electrons/cm{sup 2}. The irradiated films exhibit better emission current stability as compared to the untreated film. The improved field emission properties of the irradiated films have been attributed to the structural damage as revealed from the Raman studies.

  11. Bond formation in hafnium atom implantation into SiC induced by high-energy electron irradiation

    International Nuclear Information System (INIS)

    Yasuda, H.; Mori, H.; Sakata, T.; Naka, M.; Fujita, H.

    1992-01-01

    Bilayer films of Hf (target atoms)/α-SiC (substrate) were irradiated with 2 MeV electrons in an ultra-high voltage electron microscope (UHVEM), with the electron beam incident on the hafnium layer. As a result of the irradiation, hafnium atoms were implanted into the SiC substrate. Changes in the microstructure and valence electronic states associated with the implantation were studied by a combination of UHVEM and Auger valence electron spectroscopy. The implantation process is summarized as follows. (1) Irradiation with 2 MeV electrons first induces a crystalline-to-amorphous transition in α-SiC. (2) Hafnium atoms which have been knocked-off from the hafnium layer by collision with the 2 MeV electrons are implanted into the resultant amorphous SiC. (3) The implanted hafnium atoms make preferential bonding to carbon atoms. (4) With continued irradiation, the hafnium atoms repeat the displacement along the beam direction and the subsequent bonding with the dangling hybrids of carbon and silicon. The repetition of the displacement and subsequent bonding lead to the deep implantation of hafnium atoms into the SiC substrate. It is concluded that implantation successfully occurs when the bond strength between a constituent atom of a substrate and an injected atom is stronger than that between constituent atoms of a substrate. (Author)

  12. Influence of N-type μc-SiOx:H intermediate reflector and top cell material properties on the electrical performance of "micromorph" tandem solar cells

    Science.gov (United States)

    Chatterjee, P.; Roca i Cabarrocas, P.

    2018-01-01

    Amorphous silicon (a-Si:H) / micro-crystalline silicon (μc-Si:H), "micromorph" tandem solar cells have been investigated using a detailed electrical - optical model. Although such a tandem has good light absorption over the entire visible spectrum, the a-Si:H top cell suffers from strong light-induced degradation (LID). To improve matters, we have replaced a-Si:H by hydrogenated polymorphous silicon (pm-Si:H), a nano-structured silicon thin film with lower LID than a-Si:H. But the latter's low current carrying capacity necessitates a thicker top cell for current-matching, again leading to LID problems. The solution is to introduce a suitable intermediate reflector (IR) at the junction between the sub-cells, to concentrate light of the shorter visible wavelengths into the top cell. Here we assess the suitability of N-type micro-crystalline silicon oxide (μc-SiOx:H) as an IR. The sensitivity of the solar cell performance to the complex refractive index, thickness and texture of such a reflector is studied. We conclude that N-μc-SiOx:H does concentrate light into the top sub-cell, thus reducing its required thickness for current-matching. However the IR also reflects light right out of the device; so that the initial efficiency suffers. The advantage of such an IR is ultimately seen in the stabilized state since the LID of a thin top cell is low. We also find that for high stabilized efficiencies, the IR should be flat (having no texture of its own). Our study indicates that we may expect to reach 15% stable tandem micromorph efficiency.

  13. Positron studies in as received and electron irradiated YBa2Cu3O6.9, DyBa2Cu3O6.9 and CaSr2Bi2Cu2O8-δ

    International Nuclear Information System (INIS)

    Moser, P.; Henry, J.Y.

    1988-01-01

    The temperature dependence of the positron annihilation parameters is measured between 77K and 300K in different oxide superconductors before and after electron irradiation. Before irradiation a reproducible behaviour is observed in YBa 2 Cu 3 O 6.9 and DyBa 2 Cu 3 O 6.9 : a maximum of the positron lifetime and Doppler broadening is found at 150K suggesting that positrons are trapped in a well defined charged defect identified as the [Cu(1),nO] polyvacancy, with n=1 or 2. After electron irradiation, an increase in positron lifetime is found, which disappears by annealing between 100K and 500K

  14. The influence of electron irradiation at the various temperatures and annealing on carriers mobility at the low temperatures in neutron transmutation doped gallium arsenide

    International Nuclear Information System (INIS)

    Korshunov, F.P.; Kurilovich, N.F.; Prokhorenko, T.A.; Troshchinskii, V.T.; Shesholko, V.K.

    1999-01-01

    The influence of electron irradiation at the various temperatures and annealing on measured at T=100 K carriers mobility in neutron transmutation doped GaAs have been investigated. It was detected that rate of mobility decreasing with irradiation dose increasing decreases when irradiation temperature increases. It was shown that at the same time it take place the radiation defects creating and their particular or full annealing (in the dependence on irradiation temperature). Radiation stimulated annealing (annealing that take place during irradiation at the elevated temperatures) is more effective than the annealing at the same temperatures that take place after crystals are irradiated at room temperature. It means that any defects annealing during irradiation at elevated temperatures take place at more low temperatures than that during annealing after irradiation at room temperature

  15. Accumulation patterns of proper point defects in thermo-regulating coatings based on ZnO for space vehicles under electron irradiation

    International Nuclear Information System (INIS)

    Mikhajlov, M.M.; Sharafutdinova, V.V.

    1998-01-01

    The expansion of the band of the induced absorption of zinc oxide powders and thermo-regulating coatings based on ZnO for space vehicles is carried out after the 30 keV electron irradiation. Singularities of the growth of the intensity of individual components as a function of the accelerated electron flow are studied. It is found that power and exponential dependences with one or two components are characteristic for different color centers and different thermo-regulating coatings. The kinetics of the accumulation of free electrons is characterized by the maximum value of the electron flows at which the generation of color centers on pre-radiation defects is realized by the radiolysis of the pigment lattice

  16. Microstructural Parameters in 8 MeV Electron-Irradiated BOMBYX MORI Silk Fibers by Wide-ANGLE X-Ray Scattering Studies (waxs)

    Science.gov (United States)

    Sangappa, Asha, S.; Sanjeev, Ganesh; Subramanya, G.; Parameswara, P.; Somashekar, R.

    2010-01-01

    The present work looks into the microstructural modification in electron irradiated Bombyx mori P31 silk fibers. The irradiation process was performed in air at room temperature using 8 MeV electron accelerator at different doses: 0, 25, 50 and 100 kGy. Irradiation of polymer is used to cross-link or degrade the desired component or to fix the polymer morphology. The changes in microstructural parameters in these natural polymer fibers have been computed using wide angle X-ray scattering (WAXS) data and employing line profile analysis (LPA) using Fourier transform technique of Warren. Exponential, Lognormal and Reinhold functions for the column length distributions have been used for the determination of crystal size, lattice strain and enthalpy parameters.

  17. Annealing study of the electron-irradiation-induced defects H4 and E11 in InP: Defect transformation (H4-E11)→H4'

    International Nuclear Information System (INIS)

    Bretagnon, T.; Bastide, G.; Rouzeyre, M.

    1990-01-01

    Capacitance spectroscopy has been used to study the two dominant deep levels, H 4 and E 11 , produced in InP by low-energy electron irradiation. The annealing rates of H 4 and E 11 in the p-type material are found to be identical, as is also the dependence on free-carrier recombination and on the chemical nature of the acceptor (Cd or Zn). Recombination-enhanced annealing converts these traps to a hole trap H 4 ' , which is not detectable by conventional deep-level transient spectroscopy. Its emission and capture properties are measured and analyzed. The similarity of the creation and annealing behavior of H 4 and E 11 shows that they share a common point defect. Our results lead to the tentative identification of the defect as a phosphorous vacancy-acceptor complex and we show how this may anneal to the H 4 ' center

  18. Evidence for two distinct defects contributing to the H4 deep-level transient spectroscopy peak in electron-irradiated InP

    International Nuclear Information System (INIS)

    Darwich, R.; Massarani, B.; Kaaka, M.; Awad, F.

    2000-01-01

    Deep-level transient spectroscopy (DLTS) has been used to study the dominant deep-level H4 produced in InP by electron irradiation. The characteristics of the H4 peak in Zn-doped Inp has been studied as a function of pulse duration (t p ) before and after annealing. The results show that at least two traps contribute to the H4 peak: one is a fast trap (labeled H4 f ) and the other is a show trap (labeled H4 s ). This is show through several results concerning the activation energy, the capture cross section, the full width at half-maximum, and the peak temperature shift. It is shown that both traps are irradiation defects created in P sublattice. (authors)

  19. Continuum model of tensile fracture of metal melts and its application to a problem of high-current electron irradiation of metals

    International Nuclear Information System (INIS)

    Mayer, Alexander E.; Mayer, Polina N.

    2015-01-01

    A continuum model of the metal melt fracture is formulated on the basis of the continuum mechanics and theory of metastable liquid. A character of temperature and strain rate dependences of the tensile strength that is predicted by the continuum model is verified, and parameters of the model are fitted with the use of the results of the molecular dynamics simulations for ultra-high strain rates (≥1–10/ns). A comparison with experimental data from literature is also presented for Al and Ni melts. Using the continuum model, the dynamic tensile strength of initially uniform melts of Al, Cu, Ni, Fe, Ti, and Pb within a wide range of strain rates (from 1–10/ms to 100/ns) and temperatures (from melting temperature up to 70–80% of critical temperature) is calculated. The model is applied to numerical investigation of a problem of the high-current electron irradiation of Al, Cu, and Fe targets

  20. Effect of 1.5 MeV electron irradiation on β-Ga2O3 carrier lifetime and diffusion length

    Science.gov (United States)

    Lee, Jonathan; Flitsiyan, Elena; Chernyak, Leonid; Yang, Jiancheng; Ren, Fan; Pearton, Stephen J.; Meyler, Boris; Salzman, Y. Joseph

    2018-02-01

    The influence of 1.5 MeV electron irradiation on minority transport properties of Si doped β-Ga2O3 vertical Schottky rectifiers was observed for fluences up to 1.43 × 1016 cm-2. The Electron Beam-Induced Current technique was used to determine the minority hole diffusion length as a function of temperature for each irradiation dose. This revealed activation energies related to shallow donors at 40.9 meV and radiation-induced defects with energies at 18.1 and 13.6 meV. Time-resolved cathodoluminescence measurements showed an ultrafast 210 ps decay lifetime and reduction in carrier lifetime with increased irradiation.

  1. A simulation-based proposed high-k heterostructure AlGaAs/Si junctionless n-type tunnel FET

    International Nuclear Information System (INIS)

    Rahi Shiromani Balmukund; Asthana Pranav; Ghosh Bahniman

    2014-01-01

    We propose a heterostructure junctionless tunnel field effect transistor (HJL-TFET) using AlGaAs/Si. In the proposed HJL-TFET, low band gap silicon is used in the source side and higher band gap AlGaAs in the drain side. The whole AlGaAs/Si region is heavily doped n-type. The proposed HJL-TFET uses two isolated gates (named gate, gate1) with two different work functions (gate = 4.2 eV, gate1 = 5.2 eV respectively). The 2-D nature of HJL-TFET current flow is studied. The proposed structure is simulated in Silvaco with different gate dielectric materials. This structure exhibits a high on current in the range of 1.4 × 10 −6 A/μm, the off current remains as low as 9.1 × 10 −14 A/μm. So I ON /I OFF ratio of ≃ 10 8 is achieved. Point subthreshold swing has also been reduced to a value of ≃ 41 mV/decade for TiO 2 gate material. (semiconductor devices)

  2. Sigma-1 Receptor Plays a Negative Modulation on N-type Calcium Channel

    Directory of Open Access Journals (Sweden)

    Kang Zhang

    2017-05-01

    Full Text Available The sigma-1 receptor is a 223 amino acids molecular chaperone with a single transmembrane domain. It is resident to eukaryotic mitochondrial-associated endoplasmic reticulum and plasma membranes. By chaperone-mediated interactions with ion channels, G-protein coupled receptors and cell-signaling molecules, the sigma-1 receptor performs broad physiological and pharmacological functions. Despite sigma-1 receptors have been confirmed to regulate various types of ion channels, the relationship between the sigma-1 receptor and N-type Ca2+ channel is still unclear. Considering both sigma-1 receptors and N-type Ca2+ channels are involved in intracellular calcium homeostasis and neurotransmission, we undertake studies to explore the possible interaction between these two proteins. In the experiment, we confirmed the expression of the sigma-1 receptors and the N-type calcium channels in the cholinergic interneurons (ChIs in rat striatum by using single-cell reverse transcription-polymerase chain reaction (scRT-PCR and immunofluorescence staining. N-type Ca2+ currents recorded from ChIs in the brain slice of rat striatum was depressed when sigma-1 receptor agonists (SKF-10047 and Pre-084 were administrated. The inhibition was completely abolished by sigma-1 receptor antagonist (BD-1063. Co-expression of the sigma-1 receptors and the N-type calcium channels in Xenopus oocytes presented a decrease of N-type Ca2+ current amplitude with an increase of sigma-1 receptor expression. SKF-10047 could further depress N-type Ca2+ currents recorded from oocytes. The fluorescence resonance energy transfer (FRET assays and co-immunoprecipitation (Co-IP demonstrated that sigma-1 receptors and N-type Ca2+ channels formed a protein complex when they were co-expressed in HEK-293T (Human Embryonic Kidney -293T cells. Our results revealed that the sigma-1 receptors played a negative modulation on N-type Ca2+ channels. The mechanism for the inhibition of sigma-1 receptors on

  3. Analysis of thermal detrapping of holes created by electron irradiation in high purity amorphous SiO{sub 2} using the induced and secondary current measurements

    Energy Technology Data Exchange (ETDEWEB)

    Said, K., E-mail: kamel.said@fss.rnu.tn [LaMaCoP, Université de Sfax, BP 1171, 3000 Sfax (Tunisia); Moya, G.; Si Ahmed, A. [Im2np, UMR 7334 CNRS, Aix-Marseille Université, 13397 Marseille Cedex 20 (France); Damamme, G. [CEA, DAM, GRAMAT, 46500 Gramat (France); Kallel, A. [LaMaCoP, Université de Sfax, BP 1171, 3000 Sfax (Tunisia)

    2016-01-15

    Graphical abstract: - Highlights: • Positive charging of high purity amorphous SiO{sub 2} achieved by electron irradiation in a specially equipped scanning electron microscope. • Quantity of detrapped holes evaluated via measurements of induced and secondary electron currents. • Study of isothermal detrapping for different temperatures (300–663 K). • Analysis of the hole detrapping via a first order kinetics. • Evaluation of the hole detrapping parameters (activation energy and frequency factor). - Abstract: Isothermal detrapping of holes after electron irradiation (using a SEM) in high purity amorphous SiO{sub 2} is evaluated at different temperatures (in the range 300–663 K) by means of the induced and secondary current measurements. In order to single out the hole detrapping, the specific charging conditions (1 keV defocused electron beam of low density) leading to positive charging are adopted. The thermal detrapping, which stems from a single trap, begins at 523 K and is completed at 663 K. After annealing in air at 973 K during 48 h, two detrapping stages are revealed: the former is connected with an additional shallow trap, while the latter requires temperatures above 663 K for a complete detrapping. The first order kinetics describes reasonably well the detrapping process. The frequency factors (near 10{sup 10} s{sup −1}) and the activation energies (about 1.6 eV) deduced from this analysis could be assigned, respectively, to the relaxation connected to detrapping and to the trap energy level of the charged oxygen vacancy.

  4. Study of Diffusion Barrier for Solder/ n-Type Bi2Te3 and Bonding Strength for p- and n-Type Thermoelectric Modules

    Science.gov (United States)

    Lin, Wen-Chih; Li, Ying-Sih; Wu, Albert T.

    2018-01-01

    This paper investigates the interfacial reaction between Sn and Sn3Ag0.5Cu (SAC305) solder on n-type Bi2Te3 thermoelectric material. An electroless Ni-P layer successfully suppressed the formation of porous SnTe intermetallic compound at the interface. The formation of the layers between Bi2Te3 and Ni-P indicates that Te is the dominant diffusing species. Shear tests were conducted on both Sn and SAC305 solder on n- and p-type Bi2Te3 with and without a Ni-P barrier layer. Without a Ni-P layer, porous SnTe would result in a more brittle fracture. A comparison of joint strength for n- and p-type thermoelectric modules is evaluated by the shear test. Adding a diffusion barrier increases the mechanical strength by 19.4% in n-type and 74.0% in p-type thermoelectric modules.

  5. Hydrogen interaction with radiation defects in p-type silicon

    CERN Document Server

    Feklisova, O V; Yakimov, E B; Weber, J

    2001-01-01

    Hydrogen interaction with radiation defects in p-type silicon has been investigated by deep-level non-stationary spectroscopy. Hydrogen is introduced into the high-energy electron-irradiated crystals under chemical etching in acid solutions at room temperature followed by the reverse-bias annealing at 380 K. It is observed that passivation of the irradiation-induced defects is accompanied by formation of novel electrically active defects with hydrogen-related profiles. Effect of hydrogen on the electrical activity of the C sub s C sub i complexes is shown for the first time. Based on the spatial distribution and passivation kinetics, possible nature of the novel complexes is analyzed. The radii for hydrogen capture by vacancies, K-centers, C sub s C sub i centers and the novel complexes are determined

  6. New Conotoxin SO-3 Targeting N-type Voltage-Sensitive Calcium Channels

    Directory of Open Access Journals (Sweden)

    Lei Wen

    2006-04-01

    Full Text Available Selective blockers of the N-type voltage-sensitive calcium (CaV channels are useful in the management of severe chronic pain. Here, the structure and function characteristics of a novel N-type CaV channel blocker, SO-3, are reviewed. SO-3 is a 25-amino acid conopeptide originally derived from the venom of Conus striatus, and contains the same 4-loop, 6-cysteine framework (C-C-CC-C-C as O-superfamily conotoxins. The synthetic SO-3 has high analgesic activity similar to ω-conotoxin MVIIA (MVIIA, a selective N-type CaV channel blocker approved in the USA and Europe for the alleviation of persistent pain states. In electrophysiological studies, SO-3 shows more selectivity towards the N-type CaV channels than MVIIA. The dissimilarity between SO-3 and MVIIA in the primary and tertiary structures is further discussed in an attempt to illustrate the difference in selectivity of SO-3 and MVIIA towards N-type CaV channels.

  7. Unipolar n-Type Black Phosphorus Transistors with Low Work Function Contacts.

    Science.gov (United States)

    Wang, Ching-Hua; Incorvia, Jean Anne C; McClellan, Connor J; Yu, Andrew C; Mleczko, Michal J; Pop, Eric; Wong, H-S Philip

    2018-05-09

    Black phosphorus (BP) is a promising two-dimensional (2D) material for nanoscale transistors, due to its expected higher mobility than other 2D semiconductors. While most studies have reported ambipolar BP with a stronger p-type transport, it is important to fabricate both unipolar p- and n-type transistors for low-power digital circuits. Here, we report unipolar n-type BP transistors with low work function Sc and Er contacts, demonstrating a record high n-type current of 200 μA/μm in 6.5 nm thick BP. Intriguingly, the electrical transport of the as-fabricated, capped devices changes from ambipolar to n-type unipolar behavior after a month at room temperature. Transmission electron microscopy analysis of the contact cross-section reveals an intermixing layer consisting of partly oxidized metal at the interface. This intermixing layer results in a low n-type Schottky barrier between Sc and BP, leading to the unipolar behavior of the BP transistor. This unipolar transport with a suppressed p-type current is favorable for digital logic circuits to ensure a lower off-power consumption.

  8. Geochemistry of silicon isotopes

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Tiping; Li, Yanhe; Gao, Jianfei; Hu, Bin [Chinese Academy of Geological Science, Beijing (China). Inst. of Mineral Resources; Jiang, Shaoyong [China Univ. of Geosciences, Wuhan (China).

    2018-04-01

    Silicon is one of the most abundant elements in the Earth and silicon isotope geochemistry is important in identifying the silicon source for various geological bodies and in studying the behavior of silicon in different geological processes. This book starts with an introduction on the development of silicon isotope geochemistry. Various analytical methods are described and compared with each other in detail. The mechanisms of silicon isotope fractionation are discussed, and silicon isotope distributions in various extraterrestrial and terrestrial reservoirs are updated. Besides, the applications of silicon isotopes in several important fields are presented.

  9. Effect of electron irradiation exposure on phase formation, microstructure and mechanical strength of Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8} superconductor prepared via co-precipitation method

    Energy Technology Data Exchange (ETDEWEB)

    Mohiju, Zaahidah ' Atiqah; Hamid, Nasri A., E-mail: Nasri@uniten.edu.my; Kannan, V. [Center for Nuclear Energy, College of Engineering, Universiti Tenaga Nasional, Jalan IKRAM-UNITEN, 43000 Kajang, Selangor (Malaysia); Abdullah, Yusof [Materials Technology Group, Industrial Technology Division, Malaysian Nuclear Agency, Bangi, 43000 Kajang, Selangor (Malaysia)

    2015-04-29

    In this work the effect of electron irradiation on the mechanical properties of Bi2Sr2CaCu2O8 (Bi-2212) superconductor was studied by exposing the Bi-2212 superconductor with different doses of electron irradiation. Bi-2212 samples were prepared by using co-precipitation method. Irradiation was performed with irradiation dose of 100 kGray and 200 kGray, respectively. Characterization of the samples was performed by using X-Ray Diffraction (XRD) and Scanning Electron Microscopy (SEM). Instron Universal Testing machine was used to measure the strength of the samples. The XRD patterns for the non-irradiated and irradiated samples show well-defined peaks of which could be indexed on the basis of a Bi-2212 phase structure. XRD patterns also indicate that electron irradiation did not affect the Bi-2212 superconducting phase. SEM micrographs show disorientation in the texture of the microstructure for irradiated samples. Sample exposed to 200 kGray electron irradiation dose shows enhancement of grain size. Their grain growth and texture improved slightly compared to other sample. The results also show that enlargement of grain size resulted in higher mechanical strength.

  10. Threshold irradiation dose for amorphization of silicon carbide

    International Nuclear Information System (INIS)

    Snead, L.L.; Zinkle, S.J.

    1997-01-01

    The amorphization of silicon carbide due to ion and electron irradiation is reviewed with emphasis on the temperature-dependent critical dose for amorphization. The effect of ion mass and energy on the threshold dose for amorphization is summarized, showing only a weak dependence near room temperature. Results are presented for 0.56 MeV silicon ions implanted into single crystal 6H-SiC as a function of temperature and ion dose. From this, the critical dose for amorphization is found as a function of temperature at depths well separated from the implanted ion region. Results are compared with published data generated using electrons and xenon ions as the irradiating species. High resolution TEM analysis is presented for the Si ion series showing the evolution of elongated amorphous islands oriented such that their major axis is parallel to the free surface. This suggests that surface of strain effects may be influencing the apparent amorphization threshold. Finally, a model for the temperature threshold for amorphization is described using the Si ion irradiation flux and the fitted interstitial migration energy which was found to be ∼0.56 eV. This model successfully explains the difference in the temperature-dependent amorphization behavior of SiC irradiated with 0.56 MeV silicon ions at 1 x 10 -3 dpa/s and with fission neutrons irradiated at 1 x 10 -6 dpa/s irradiated to 15 dpa in the temperature range of ∼340 ± 10K

  11. Magnéli oxides as promising n-type thermoelectrics

    Directory of Open Access Journals (Sweden)

    Gregor Kieslich

    2014-10-01

    Full Text Available The discovery of a large thermopower in cobalt oxides in 1997 lead to a surge of interest in oxides for thermoelectric application. Whereas conversion efficiencies of p-type oxides can compete with non-oxide materials, n-type oxides show significantly lower thermoelectric performances. In this context so-called Magnéli oxides have recently gained attention as promising n-type thermoelectrics. A combination of crystallographic shear and intrinsic disorder lead to relatively low thermal conductivities and metallic-like electrical conductivities in Magnéli oxides. Current peak-zT values of 0.3 around 1100 K for titanium and tungsten Magnéli oxides are encouraging for future research. Here, we put Magnéli oxides into context of n-type oxide thermoelectrics and give a perspective where future research can bring us.

  12. Development of n-type polymer semiconductors for organic field-effect transistors

    International Nuclear Information System (INIS)

    Choi, Jongwan; Kim, Nakjoong; Song, Heeseok; Kim, Felix Sunjoo

    2015-01-01

    We review herein the development of unipolar n-type polymer semiconductors in organic field-effect transistors, which would enable large-scale deployment of printed electronics in combination with a fast-growing area of p-type counterparts. After discussing general features of electron transport in organic semiconductors, various π-conjugated polymers that are capable of transporting electrons are selected and summarized to outline the design principles for enhancing electron mobility and stability in air. The n-type polymer semiconductors with high electron mobility and good stability in air share common features of low-lying frontier molecular orbital energy levels achieved by design. In this review, materials are listed in roughly chronological order of the appearance of the key building blocks, such as various arylene diimides, or structural characteristics, including nitrile and fluorinated groups, in order to present the progress in the area of n-type polymers. (paper)

  13. Fluorescence and thermoluminescence in silicon oxide films rich in silicon; Fluorescencia y termoluminiscencia en peliculas de oxido de silicio rico en silicio

    Energy Technology Data Exchange (ETDEWEB)

    Berman M, D.; Piters, T. M. [Centro de Investigacion en Fisica, Universidad de Sonora, Apdo. Postal 5-088, Hermosillo 83190, Sonora (Mexico); Aceves M, M.; Berriel V, L. R. [Instituto Nacional de Astrofisica, Optica y Electronica, Apdo. Postal 51, Puebla 72000, Puebla (Mexico); Luna L, J. A. [CIDS, Benemerita Universidad Autonoma de Puebla, Apdo. Postal 1651, Puebla 72000, Puebla (Mexico)

    2009-10-15

    In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 {omega}-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N{sub 2} at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

  14. High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers

    Energy Technology Data Exchange (ETDEWEB)

    Antoniadis, H.

    2011-03-01

    Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink high efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.

  15. Scandium-doped zinc cadmium oxide as a new stable n-type oxide thermoelectric material

    DEFF Research Database (Denmark)

    Han, Li; Christensen, Dennis Valbjørn; Bhowmik, Arghya

    2016-01-01

    Scandium-doped zinc cadmium oxide (Sc-doped ZnCdO) is proposed as a new n-type oxide thermoelectric material. The material is sintered in air to maintain the oxygen stoichiometry and avoid instability issues. The successful alloying of CdO with ZnO at a molar ratio of 1 : 9 significantly reduced...... is a good candidate for improving the overall conversion efficiencies in oxide thermoelectric modules. Meanwhile, Sc-doped ZnCdO is robust in air at high temperatures, whereas other n-type materials, such as Al-doped ZnO, will experience rapid degradation of their electrical conductivity and ZT....

  16. Crystalline to amorphous transformation in silicon

    International Nuclear Information System (INIS)

    Cheruvu, S.M.

    1982-09-01

    In the present investigation, an attempt was made to understand the fundamental mechanism of crystalline-to-amorphous transformation in arsenic implanted silicon using high resolution electron microscopy. A comparison of the gradual disappearance of simulated lattice fringes with increasing Frenkel pair concentration with the experimental observation of sharp interfaces between crystalline and amorphous regions was carried out leading to the conclusion that when the defect concentration reaches a critical value, the crystal does relax to an amorphous state. Optical diffraction experiments using atomic models also supported this hypothesis. Both crystalline and amorphous zones were found to co-exist with sharp interfaces at the atomic level. Growth of the amorphous fraction depends on the temperature, dose rate and the mass of the implanted ion. Preliminary results of high energy electron irradiation experiments at 1.2 MeV also suggested that clustering of point defects occurs near room temperature. An observation in a high resolution image of a small amorphous zone centered at the core of a dislocation is presented as evidence that the nucleation of an amorphous phase is heterogeneous in nature involving clustering or segregation of point defects near existing defects

  17. Mobility of charge carriers in porous silicon layers

    International Nuclear Information System (INIS)

    Forsh, P. A.; Martyshov, M. N.; Latysheva, A. P.; Vorontsov, A. S.; Timoshenko, V. Yu.; Kashkarov, P. K.

    2008-01-01

    The (conduction) mobility of majority charge carriers in porous silicon layers of the n and p types is estimated by joint measurements of electrical conductivity and free charge carrier concentration, which is determined from IR absorption spectra. Adsorption of donor and acceptor molecules leading to a change in local electric fields in the structure is used to identify the processes controlling the mobility in porous silicon. It is found that adsorption of acceptor and donor molecules at porous silicon of the p and n types, respectively, leads to a strong increase in electrical conductivity, which is associated with an increase in the concentration of free carrier as well as in their mobility. The increase in the mobility of charge carriers as a result of adsorption indicates the key role of potential barriers at the boundaries of silicon nanocrystals and may be due to a decrease in the barrier height as a result of adsorption

  18. The effect of diets containing pistachio by products treated with electron irradiation, NaOH, and PEG on nutrients digestibility and performance of finishing Zandi lambs

    Directory of Open Access Journals (Sweden)

    Masoud Moradi

    2016-04-01

    Full Text Available Introduction It has been estimated that PBP production based on fresh weight in Iran is over 400,000 MT annually. Pistachio by-products consist of 53.50% external hull (epicarp with the remaining composed of leaves, mesocarp and kernel. The results of few studies showed feeding of low levels of PBP had no effects on sheep, dairy cow and goat performance. Ensiled of PBP with PEG, NaOH and urea then treated by electron irradiation could be caused to better nutrition value via deactivation of tannins. The aim of this study was to survey the effect of diets containing pistachio by products treated by electron irradiation, NaOH, and PEG on nutrients digestibility and performance of finishing Zandi lambs. Materials and methods Twenty male Zandi lambs with the initial average body weight of 21±1.52 kg were housed in individual pens and were allocated to four dietary treatments in a completely randomized design for 70 days. The basal diet consisted of 220 g/kg DM PBP, 130 g/kg DM wheat straw and 650 g/kg DM barley based concentrate. The four dietary treatments included control diet (Treatment 1; basal diet containing 22% PB, ER-PBP (Treatment 2; containing 22% electron irradiated PBP, NaOH-PBP (Treatment 3; containing 22% NaOH treated PBP and PEG-PBP (Treatment 4; PEG added to basal diet as 15 g/kg of diets DM. Throughout the 70 d experiment, body weight was measured weekly. Feed intake and ort of lambs were recorded and sampled daily for determination of nutrient intake of DM, CP (N × 6.25, EE and NDF as describes before. Apparent total digestibility of nutrients was estimated by the marker ratio technique using acid insoluble ash (AIA as an internal marker. Blood samples (10 ml were taken from jugular vein of lambs before morning feeding on d 70 of experiment. The serum concentrations of total protein (TP, albumin, creatinine, glucose and urea were determined using commercial laboratory kits (Pars Azmun Laboratory, Tehran, Iran and an auto analyzer

  19. Isotopic Anomalies in Organic Nanoglobules from Comet 81P/Wild 2: Comparison to Murchison Nanoglobules and Isotopic Anomalies Induced in Terrestrial Organics by Electron Irradiation

    Energy Technology Data Exchange (ETDEWEB)

    De Gregorio, B.; Stroud, R; Nittler, L; Alexander, C; Kilcoyne, A; Zega, T

    2010-01-01

    Nanoglobules are a form of organic matter found in interplanetary dust particles and primitive meteorites and are commonly associated with {sup 15}N and D isotopic anomalies that are suggestive of interstellar processes. We report the discovery of two isotopically-anomalous organic globules from the Stardust collection of particles from Comet 81P/Wild 2 and compare them with nanoglobules from the Murchison CM2 meteorite. One globule from Stardust Cometary Track 80 contains highly aromatic organic matter and a large {sup 15}N anomaly ({delta}{sup 15}N = 1120{per_thousand}). Associated, non-globular, organic matter from this track is less enriched in {sup 15}N and contains a mixture of aromatic and oxidized carbon similar to bulk insoluble organic material (IOM) from primitive meteorites. The second globule, from Cometary Track 2, contains non-aromatic organic matter with abundant nitrile ({single_bond}C{triple_bond}N) and carboxyl ({single_bond}COOH) functional groups. It is significantly enriched in D ({delta}D = 1000{per_thousand}) but has a terrestrial {sup 15}N/{sup 14}N ratio. Experiments indicate that similar D enrichments, unaccompanied by {sup 15}N fractionation, can be reproduced in the laboratory by electron irradiation of epoxy or cyanoacrylate. Thus, a terrestrial origin for this globule cannot be ruled out, and, conversely, exposure to high-energy electron irradiation in space may be an important factor in producing D anomalies in organic materials. For comparison, we report two Murchison globules: one with a large {sup 15}N enrichment and highly aromatic chemistry analogous to the Track 80 globule and the other only moderately enriched in {sup 15}N with IOM-like chemistry. The observation of organic globules in Comet 81P/Wild 2 indicates that comets likely sampled the same reservoirs of organic matter as did the chondrite parent bodies. The observed isotopic anomalies in the globules are most likely preserved signatures of low temperature (<10 K

  20. Isotopic anomalies in organic nanoglobules from Comet 81P/Wild 2: Comparison to Murchison nanoglobules and isotopic anomalies induced in terrestrial organics by electron irradiation

    Science.gov (United States)

    De Gregorio, Bradley T.; Stroud, Rhonda M.; Nittler, Larry R.; Alexander, Conel M. O.'D.; Kilcoyne, A. L. David; Zega, Thomas J.

    2010-08-01

    Nanoglobules are a form of organic matter found in interplanetary dust particles and primitive meteorites and are commonly associated with 15N and D isotopic anomalies that are suggestive of interstellar processes. We report the discovery of two isotopically-anomalous organic globules from the Stardust collection of particles from Comet 81P/Wild 2 and compare them with nanoglobules from the Murchison CM2 meteorite. One globule from Stardust Cometary Track 80 contains highly aromatic organic matter and a large 15N anomaly (δ 15N = 1120‰). Associated, non-globular, organic matter from this track is less enriched in 15N and contains a mixture of aromatic and oxidized carbon similar to bulk insoluble organic material (IOM) from primitive meteorites. The second globule, from Cometary Track 2, contains non-aromatic organic matter with abundant nitrile ( sbnd C tbnd N) and carboxyl ( sbnd COOH) functional groups. It is significantly enriched in D (δD = 1000‰) but has a terrestrial 15N/ 14N ratio. Experiments indicate that similar D enrichments, unaccompanied by 15N fractionation, can be reproduced in the laboratory by electron irradiation of epoxy or cyanoacrylate. Thus, a terrestrial origin for this globule cannot be ruled out, and, conversely, exposure to high-energy electron irradiation in space may be an important factor in producing D anomalies in organic materials. For comparison, we report two Murchison globules: one with a large 15N enrichment and highly aromatic chemistry analogous to the Track 80 globule and the other only moderately enriched in 15N with IOM-like chemistry. The observation of organic globules in Comet 81P/Wild 2 indicates that comets likely sampled the same reservoirs of organic matter as did the chondrite parent bodies. The observed isotopic anomalies in the globules are most likely preserved signatures of low temperature (<10 K) chemistry in the interstellar medium or perhaps the outer regions of the solar nebula. In other

  1. Highly Efficient p-i-n Type Organic Light-emitting Diodes Using ...

    African Journals Online (AJOL)

    operating voltage of 3.0 V. In addition, impressive characteristics of white .... low voltage drops in the transport layers due to their ... thermal evaporation in high vacuum or organic vapor ... the calibrated silicon photodiode above the OLEDs.

  2. N-Type self-assembled monolayer field-effect transistors for flexible organic electronics

    NARCIS (Netherlands)

    Ringk, A.; Roelofs, Christian; Smits, E.C.P.; van der Marel, C.; Salzmann, I.; Neuhold, A.; Gelinck, G.H.; Resel, R.; de Leeuw, D.M.; Strohriegl, P.

    Within this work we present n-type self-assembled monolayer field-effect transistors (SAMFETs) based on a novel perylene bisimide. The molecule spontaneously forms a covalently fixed monolayer on top of an aluminium oxide dielectric via a phosphonic acid anchor group. Detailed studies revealed an

  3. Air-stable n-type doping of graphene from overlying Si3N4 film

    International Nuclear Information System (INIS)

    Wang, Zegao; Li, Pingjian; Chen, Yuanfu; Liu, Jingbo; Qi, Fei; Tian, Hongjun; Zheng, Binjie; Zhou, Jinhao

    2014-01-01

    In this study, we report a facile method to obtain air-stable n-type graphene by plasma-enhanced chemical vapor depositing Si 3 N 4 film on the surface of graphene. We have demonstrated that the overlying Si 3 N 4 film can not only act as the penetration-barrier against H 2 O and O 2 adsorbed on the graphene surface, but also cause an effective n-type doping due to the amine groups at the interface of graphene/Si 3 N 4 . Furthermore, the studies reveal that the Dirac point of graphene can be modulated by the thickness of Si 3 N 4 film, which is due to competing effects of Si 3 N 4 -induced doping (n-type) and penetrating H 2 O (O 2 )-induced doping (p-type). We expect this method to be used for obtaining stable n-type graphene field-effect transistors in air, which will be widely used in graphene electronic devices.

  4. Barrier characteristics of Pt/Ru Schottky contacts on n-type GaN ...

    Indian Academy of Sciences (India)

    Pt/Ru Schottky rectifiers; n-type GaN; temperature–dependent electrical properties; inhomogeneous barrier heights .... a 2 μm thick Si-doped GaN films which were grown by .... ted values of ap using (9) for two Gaussian distributions of bar-.

  5. Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering

    Science.gov (United States)

    Ueno, Kohei; Fudetani, Taiga; Arakawa, Yasuaki; Kobayashi, Atsushi; Ohta, Jitsuo; Fujioka, Hiroshi

    2017-12-01

    We report a systematic investigation of the transport properties of highly degenerate electrons in Ge-doped and Si-doped GaN epilayers prepared using the pulsed sputtering deposition (PSD) technique. Secondary-ion mass spectrometry and Hall-effect measurements revealed that the doping efficiency of PSD n-type GaN is close to unity at electron concentrations as high as 5.1 × 1020 cm-3. A record low resistivity for n-type GaN of 0.16 mΩ cm was achieved with an electron mobility of 100 cm2 V-1 s-1 at a carrier concentration of 3.9 × 1020 cm-3. We explain this unusually high electron mobility of PSD n-type GaN within the framework of conventional scattering theory by modifying a parameter related to nonparabolicity of the conduction band. The Ge-doped GaN films show a slightly lower electron mobility compared with Si-doped films with the same carrier concentrations, which is likely a consequence of the formation of a small number of compensation centers. The excellent electrical properties presented in this letter clearly demonstrate the striking advantages of the low-temperature PSD technique for growing high-quality and highly conductive n-type GaN.

  6. Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering

    Directory of Open Access Journals (Sweden)

    Kohei Ueno

    2017-12-01

    Full Text Available We report a systematic investigation of the transport properties of highly degenerate electrons in Ge-doped and Si-doped GaN epilayers prepared using the pulsed sputtering deposition (PSD technique. Secondary-ion mass spectrometry and Hall-effect measurements revealed that the doping efficiency of PSD n-type GaN is close to unity at electron concentrations as high as 5.1 × 1020 cm−3. A record low resistivity for n-type GaN of 0.16 mΩ cm was achieved with an electron mobility of 100 cm2 V−1 s−1 at a carrier concentration of 3.9 × 1020 cm−3. We explain this unusually high electron mobility of PSD n-type GaN within the framework of conventional scattering theory by modifying a parameter related to nonparabolicity of the conduction band. The Ge-doped GaN films show a slightly lower electron mobility compared with Si-doped films with the same carrier concentrations, which is likely a consequence of the formation of a small number of compensation centers. The excellent electrical properties presented in this letter clearly demonstrate the striking advantages of the low-temperature PSD technique for growing high-quality and highly conductive n-type GaN.

  7. Temperature detectors on irradiated silicon base

    International Nuclear Information System (INIS)

    Karimov, M.; Dzhalelov, M.A.; Kurbanov, A.O.

    2005-01-01

    It is well known, that the most suitable for thermal resistors production is compensated silicon with impurities forming deep lying in forbidden zone, having big negative resistance temperature coefficients (RTC). In the capacity of initial materials for thermal resistors with negative RTC the n-type monocrystalline silicon with specific resistance ∼30 Ω·cm at 300 K is applied. Before the irradiation the phosphorus diffusion is realizing at temperature ∼1000 deg. C for 10 min. Irradiation is putting into practise by WWR-SM reactor fast neutrons within the range (7-10)·10 13 cm -2 . The produced resistors have nominal resistance range (8-20)·10 3 Ω·cm, coefficient of the thermal sensitivity B=4000-6000 deg. C., RTC α 300K =4-6.6 %/grad. It is shown, that offered method allows to obtain same type resistors characteristics on the base of neutron-irradiated material

  8. Extrinsic passivation of silicon surfaces for solar cells

    OpenAIRE

    Bonilla, R.S.; Reichel, C.; Hermle, M.; Martins, G.; Wilshaw, P.R.

    2015-01-01

    In the present work we study the extent to which extrinsic chemical and field effect passivation can improve the overall electrical passivation quality of silicon dioxide on silicon. Here we demonstrate that, when optimally applied, extrinsic passivation can produce surface recombination velocities below 1.2 cm/s in planar 1 Omega cm n-type Si. This is largely due to the additional field effect passivation component which reduces the recombination velocity below 2.13 cm/s. On textured surface...

  9. Process research of non-CZ silicon material

    Science.gov (United States)

    Campbell, R. B.

    1984-01-01

    Advanced processing techniques for non-CZ silicon sheet material that might improve the cost effectiveness of photovoltaic module production were investigated. Specifically, the simultaneous diffusion of liquid boron and liquid phosphorus organometallic precursors into n-type dendritic silicon web was examined. The simultaneous junction formation method for solar cells was compared with the sequential junction formation method. The electrical resistivity of the n-n and p-n junctions was discussed. Further research activities for this program along with a program documentation schedule are given.

  10. Enhanced optical performance of electrochemically etched porous silicon carbide

    International Nuclear Information System (INIS)

    Naderi, N; Hashim, M R; Saron, K M A; Rouhi, J

    2013-01-01

    Porous silicon carbide (PSC) was successfully synthesized via electrochemical etching of an n-type hexagonal silicon carbide (6H-SiC) substrate using various current densities. The cyclic voltammograms of SiC dissolution show that illumination is required for the accumulation of carriers at the surface, followed by surface oxidation and dissolution of the solid. The morphological and optical characterizations of PSC were reported. Scanning electron microscopy results demonstrated that the current density can be considered an important etching parameter that controls the porosity and uniformity of PSC; hence, it can be used to optimize the optical properties of the porous samples. (paper)

  11. Design and Tests of the Silicon Sensors for the ZEUS Micro Vertex Detector

    OpenAIRE

    Dannheim, D.; Koetz, U.; Coldewey, C.; Fretwurst, E.; Garfagnini, A.; Klanner, R.; Martens, J.; Koffeman, E.; Tiecke, H.; Carlin, R.

    2002-01-01

    To fully exploit the HERA-II upgrade,the ZEUS experiment has installed a Micro Vertex Detector (MVD) using n-type, single-sided, silicon micro-strip sensors with capacitive charge division. The sensors have a readout pitch of 120 micrometers, with five intermediate strips (20 micrometer strip pitch). The designs of the silicon sensors and of the test structures used to verify the technological parameters, are presented. Results on the electrical measurements are discussed. A total of 1123 sen...

  12. Attempting to realize n-type BiCuSeO

    Science.gov (United States)

    Zhang, Xiaoxuan; Feng, Dan; He, Jiaqing; Zhao, Li-Dong

    2018-02-01

    As an intrinsic p-type semiconductor, BiCuSeO has been widely researched in the thermoelectric community, however, n-type BiCuSeO has not been reported so far. In this work, we successfully realized n-type BiCuSeO through carrying out several successive efforts. Seebeck coefficient of BiCuSeO was increased through introducing extra Bi/Cu to fill the Bi/Cu vacancies that may produce holes, and the maximum Seebeck coefficient was increase from +447 μVK-1 for undoped BiCuSeO to +638 μVK-1 for Bi1.04Cu1.05SeO. The Seebeck coefficient of Bi1.04Cu1.05SeO was changed from p-type to n-type through electron doping through introducing Br/I in Se sites, the maximum negative Seebeck coefficient can reach ∼ -465 μVK-1 and -543 μVK-1 for Bi1.04Cu1.05Se1-xIxO and Bi1.04Cu1.05Se1-xBrxO, respectively. Then, after compositing Bi1.04Cu1.05Se0.99Br0.01O with Ag, n-type BiCuSeO can be absolutely obtained in the whole temperature range of 300-873 K, the maximum ZT 0.05 was achieved at 475 K in the Bi1.04Cu1.05Se0.99Br0.01O+15% Ag. Our report indicates that it is possible to realize n-type conducting behaviors in BiCuSeO system.

  13. Influence of oxidation temperature on the interfacial properties of n-type 4H-SiC MOS capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Jia, Yifan; Lv, Hongliang [School of Microelectronics, Xidian University, Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi’an 710071 (China); Song, Qingwen, E-mail: qwsong@xidian.edu.cn [School of Microelectronics, Xidian University, Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi’an 710071 (China); School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071 (China); Tang, Xiaoyan, E-mail: xytang@xidian.edu.cn [School of Microelectronics, Xidian University, Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi’an 710071 (China); Xiao, Li; Wang, Liangyong; Tang, Guangming [Zhongxing Telecommunication Equipment Corporation, Shenzhen 518057 (China); Zhang, Yimen; Zhang, Yuming [School of Microelectronics, Xidian University, Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi’an 710071 (China)

    2017-03-01

    Highlights: • Effect of oxidation temperature on interfacial properties of SiO{sub 2}/SiC is investigated. • Raising the oxidation temperature effectively decreases the density of NITs and N{sub eff}. • The higher oxidation temperature reduces the surface RMS roughness of the grow SiO{sub 2}. • SIMS and XPS results reveal the improvement mechanism of high temperature oxidation. - Abstract: The effect of oxidation temperature on interfacial properties of n-type 4H-SiC metal-oxide-semiconductor capacitors has been systematically investigated. Thermal dry oxidation process with three different oxidation temperatures 1200 °C, 1300 °C and 1350 °C were employed to grow SiO{sub 2} dielectric, following by the standard post-oxidation annealing (POA) in NO ambience at 1175 °C for 2 h. The root mean square (RMS) roughness measured by Atomic Force Microscopy for the thermally grown SiO{sub 2} before POA process is reduced with increasing the oxidation temperature, obtaining an atomically flat surface with a RMS of 0.157 nm from the sample oxidized at 1350 °C. Several kinds of electrical measurements were used to evaluate the densities of near interface traps and effective fixed dielectric charge for the samples, exhibiting a trend reduced with increasing the oxidation temperature. The interface state density of 3 × 10{sup 11} cm{sup −2}eV{sup −1} at 0.2 eV from the conduction band edge was achieved from conductance method measurement for the sample oxidized at 1350 °C. The results from Secondary Ion Mass Spectroscopy and X-ray Photoelectron Spectroscopy demonstrate that high oxidation temperature can reduce the width of transition layer, the excess Si and silicon suboxide compositions near the interface, leading to effective improvement of the interfacial properties.

  14. Understanding the formation and growth of Ag nanoparticles on silver chromate induced by electron irradiation in electron microscope: A combined experimental and theoretical study

    International Nuclear Information System (INIS)

    Fabbro, Maria T.; Gracia, Lourdes; Silva, Gabriela S.; Santos, Luís P.S.; Andrés, Juan; Cordoncillo, Eloisa; Longo, E.

    2016-01-01

    Ag 2 CrO 4 microcrystals were synthesized using the co-precipitation method. These microcrystals were characterized through X-ray diffraction (XRD) with Rietveld analysis, field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) with energy-dispersive spectroscopy (EDS), micro-Raman (MR). XRD patterns and Rietveld refinement data showed that the material exhibits an orthorhombic structure without any deleterious phases. FE-SEM and TEM micrographs revealed the morphology and the growth of Ag nanoparticles on Ag 2 CrO 4 microcrystals during electron beam irradiation. These events were directly monitored in real-time. Their optical properties were investigated using ultraviolet-visible (UV–vis) diffuse reflectance spectroscopy that allowed the calculation of the optical band gap energy. Theoretical analyses based on the density functional theory level indicate that the incorporation of electrons is responsible for structural modifications and formation of defects on the [AgO 6 ] and [AgO 4 ] clusters, generating ideal conditions for the growth of Ag nanoparticles. - Graphical abstract: Theoretical representation of the Ag 2 CrO 4 orthorhombic structure. Display Omitted - Highlights: • The Ag 2 CrO 4 microcrystals indicate an orthorhombic structure. • The formation of Ag 0 promotes Ag-nanoparticle growth on the surface of the Ag 2 CrO 4 . • Electron irradiation of the material induces the formation of Ag vacancies.

  15. High-resolution electron microscopy study of electron-irradiation-induced crystalline-to-amorphous transition in α-SiC single crystals

    International Nuclear Information System (INIS)

    Inui, H.; Mori, H.; Sakata, T.

    1992-01-01

    An electron-irradiation-induced crystalline-to-amorphous (CA) transition in α-SiC has been studied by high-resolution electron microscopy (HREM). The irradiation-produced damage structure was examined as a function of dose of electrons by taking high-resolution maps extending from the unirradiated crystalline region to the completely amorphized region. In the intermediate region between those two regions, that is in the CA transition region, the damage structure was essentially a mixture of crystalline and amorphous phases. The volume fraction of the amorphous phase was found to increase with increasing dose of electrons and no discrete crystalline-amorphous interface was observed in the CA transition region. These facts indicate the heterogeneous and gradual nature of the CA transition. In the transition region close to the unirradiated crystalline region, a sort of fragmentation of the crystal lattice was observed to occur, crystallites with slightly different orientations with respect to the parent crystal were formed owing to the strain around the dispersed local amorphous regions. In the transition region close to the amorphized region, these crystallites were reduced in size and were embedded in an amorphous matrix. This damage structure is the result of the increased volume fraction of the amorphous phase. In the completely amorphized region, no lattice fringes were recognized in the HREM images. The atomistic process of the CA transition is discussed on the basis of the present results and those from previous studies. (Author)

  16. Microstructural parameters in 8 MeV Electron irradiated Bombyx mori silk fibers by wide-angle X-ray scattering studies (WAXS)

    International Nuclear Information System (INIS)

    Halabhavi, Sangappa

    2009-01-01

    The present work looks into the microstructural modification in Bombyx mori silk fibers, induced by electron irradiation. The irradiation process was performed in air at room temperature by use of 8 MeV electron accelerators at different doses: 0, 25, 50, 75 and 100 kGy respectively. Irradiation of polymer can be used to crosslink or degrade the desired component or to fixate the polymer morphology. The changes in microstructural parameters in these natural polymer fibers have been studied using wide angle X-ray scattering (WAXS) method. The crystal imperfection parameters such as crystallite size , lattice strain (g in %) and enthalpy (a * ) have been determined by line profile analysis (LPA) using Fourier method of Warren. Exponential, Lognormal and Reinhold functions for the column length distributions have been used for the determination of these parameters. The goodness of the fit and the consistency of these results suggest that the exponential distribution gives much better results, even though lognormal distribution has been widely used to estimate the similar stacking faults in metal oxide compounds. (author)

  17. Buried oxide layer in silicon

    Science.gov (United States)

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  18. Lithium-drifted silicon detector with segmented contacts

    Science.gov (United States)

    Tindall, Craig S.; Luke, Paul N.

    2006-06-13

    A method and apparatus for creating both segmented and unsegmented radiation detectors which can operate at room temperature. The devices include a metal contact layer, and an n-type blocking contact formed from a thin layer of amorphous semiconductor. In one embodiment the material beneath the n-type contact is n-type material, such as lithium compensated silicon that forms the active region of the device. The active layer has been compensated to a degree at which the device may be fully depleted at low bias voltages. A p-type blocking contact layer, or a p-type donor material can be formed beneath a second metal contact layer to complete the device structure. When the contacts to the device are segmented, the device is capable of position sensitive detection and spectroscopy of ionizing radiation, such as photons, electrons, and ions.

  19. A New Understanding of Near-Threshold Damage for 200 keV Irradiation In Silicon

    International Nuclear Information System (INIS)

    Stoddard, Nathan; Duscher, Gerd J.M.; Windl, Wolfgang; Rozgonyi, G.A.

    2005-01-01

    Recently we reported room temperature point defect creation and subsequent extended defect nucleation in nitrogen-doped silicon during 200 kV electron irradiation, while identical irradiation of nitrogen-free silicon produced no effect. In this paper, first principles calculations are combined with new transmission electron microscope (TEM) observations to support a new model for elastic electron-silicon interactions in the TEM, which encompasses both nitrogen doped and nitrogen free silicon. Specifically, the nudged elastic band method was used to study the energetics along the diffusion path during an electron collision event in the vicinity of a nitrogen pair. It was found that the 0 K estimate for the energy barrier of a knock-on event is lowered from ∼12 to 6.2 eV. However, this is still inadequate to explain the observations. We therefore propose an increase in the energy barrier for Frenkel pair recombination associated with N 2 -V bonding. Concerning pure silicon, stacking fault formation near irradiation-induced holes demonstrates the participation of bulk processes. In low oxygen float zone material, 2--5 nm voids were formed, while oxygen precipitation in Czochralski Si has been verified by electron energy-loss spectroscopy. Models of irradiation-induced point defect aggregation are presented and it is concluded that these must be bulk and not surface mediated phenomena.

  20. Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

    2011-07-01

    We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

  1. Electrochemical deposition of Prussian blue on hydrogen terminated silicon(111)

    International Nuclear Information System (INIS)

    Zhao Jianwei; Zhang Yan; Shi Chuanguo; Chen, Hongyuan; Tong Lianming; Zhu Tao; Liu Zhongfan

    2006-01-01

    Electrochemical deposition of Prussian blue (PB) was performed by cyclic voltammetry on hydrogen terminated n-type Si(111) surface. The characterization of the samples based on atomic force microscopy and X-ray diffraction spectroscopy showed a nanocrystal form of the PB films on the silicon surface. The thickness of PB films as a function of the potential cycling number was monitored simultaneously by Raman spectroscopy, proving that the growth of the films is in a good controllable manner

  2. Porous silicon formation by hole injection from a back side p+/n junction for electrical insulation applications

    International Nuclear Information System (INIS)

    Fèvre, A; Menard, S; Defforge, T; Gautier, G

    2016-01-01

    In this paper, we propose to study the formation of porous silicon (PS) in low doped (1 × 10 14 cm −3 ) n-type silicon through hole injection from a back side p + /n junction in the dark. This technique is investigated within the framework of electrical insulation. Three different types of junctions are investigated. The first one is an epitaxial n-type layer grown on p + doped silicon wafer. The two other junctions are carried out by boron diffusion leading to p + regions with junction depths of 20 and 115 μm. The resulting PS morphology is a double layer with a nucleation layer (NL) and macropores fully filled with mesoporous material. This result is unusual for low doped n-type silicon. Morphology variations are described depending on the junction formation process, the electrolyte composition, the anodization current density and duration. In order to validate the more interesting industrial potentialities of the p + /n injection technique, a comparison is achieved with back side illumination in terms of resulting morphology and experiments confirm comparable results. Electrical characterizations of the double layer, including NL and fully filled macropores, are then performed. To our knowledge, this is the first electrical investigation in low doped n type silicon with this morphology. Compared to the bulk silicon, the measured electrical resistivities are 6–7 orders of magnitude higher at 373 K. (paper)

  3. Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide

    Directory of Open Access Journals (Sweden)

    Jia Ge

    2014-01-01

    Full Text Available We present an alternative method of depositing a high-quality passivation film for heterojunction silicon wafer solar cells, in this paper. The deposition of hydrogenated intrinsic amorphous silicon suboxide is accomplished by decomposing hydrogen, silane, and carbon dioxide in an industrial remote inductively coupled plasma platform. Through the investigation on CO2 partial pressure and process temperature, excellent surface passivation quality and optical properties are achieved. It is found that the hydrogen content in the film is much higher than what is commonly reported in intrinsic amorphous silicon due to oxygen incorporation. The observed slow depletion of hydrogen with increasing temperature greatly enhances its process window as well. The effective lifetime of symmetrically passivated samples under the optimal condition exceeds 4.7 ms on planar n-type Czochralski silicon wafers with a resistivity of 1 Ωcm, which is equivalent to an effective surface recombination velocity of less than 1.7 cms−1 and an implied open-circuit voltage (Voc of 741 mV. A comparison with several high quality passivation schemes for solar cells reveals that the developed inductively coupled plasma deposited films show excellent passivation quality. The excellent optical property and resistance to degradation make it an excellent substitute for industrial heterojunction silicon solar cell production.

  4. Anomalous behaviors of E1/E2 deep level defects in 6H silicon carbide

    International Nuclear Information System (INIS)

    Chen, X.D.; Ling, C.C.; Gong, M.; Fung, S.; Beling, C.D.; Brauer, G.; Anwand, W.; Skorupa, W.

    2005-01-01

    Deep level defects E 1 /E 2 were observed in He-implanted, 0.3 and 1.7 MeV electron-irradiated n-type 6H-SiC. Similar to others' results, the behaviors of E 1 and E 2 (like the peak intensity ratio, the annealing behaviors or the introduction rates) often varied from sample to sample. This anomalous result is not expected of E 1 /E 2 being usually considered arising from the same defect located at the cubic and hexagonal sites respectively. The present study shows that this anomaly is due to another DLTS peak overlapping with the E 1 /E 2 . The activation energy and the capture cross section of this defect are E C -0.31 eV and σ∼8x10 -14 cm 2 , respectively

  5. Efficient n-type doping of zinc-blende III-V semiconductor nanowires

    Science.gov (United States)

    Besteiro, Lucas V.; Tortajada, Luis; Souto, J.; Gallego, L. J.; Chelikowsky, James R.; Alemany, M. M. G.

    2014-03-01

    We demonstrate that it is preferable to dope III-V semiconductor nanowires by n-type anion substitution as opposed to cation substitution. Specifically, we show the dopability of zinc-blende nanowires is more efficient when the dopants are placed at the anion site as quantified by formation energies and the stabilization of DX-like defect centers. The comparison with previous work on n - type III-V semiconductor nanocrystals also allows to determine the role of dimensionality and quantum confinement on doping characteristics of materials. Our results are based on first-principles calculations of InP nanowires by using the PARSEC code. Work supported by the Spanish MICINN (FIS2012-33126) and Xunta de Galicia (GPC2013-043) in conjunction with FEDER. JRC acknowledges support from DoE (DE-FG02-06ER46286 and DESC0008877). Computational support was provided in part by CESGA.

  6. N-Type Semiconducting Behavior of Copper Octafluorophthalocyanine in an Organic Field-Effect Transistor

    Directory of Open Access Journals (Sweden)

    Akane Matumoto

    2017-10-01

    Full Text Available Based on the crystal structure analysis, the overlap integral between the frontier molecular orbitals of adjacent F8CuPcs in the one-dimensional chain is estimated: the overlap integral between the lowest unoccupied molecular orbitals is 5.4 × 10−3, which is larger than that in a typical n-type semiconducing material F16CuPc (2.1 × 10−3, whereas that between the highest occupied molecular orbitals is 2.9 × 10−4. Contrary to previous studies in air, we found that an organic field-effect transistor (OFET composed of F8CuPc essentially shows clear n-type semiconducting behavior in vacuum.

  7. Electrical properties of MOS structures on nitrogen-doped Czochralski-grown silicon: A positron annihilation study

    International Nuclear Information System (INIS)

    Slugen, V.; Harmatha, L.; Tapajna, M.; Ballo, P.; Pisecny, P.; Sik, J.; Koegel, G.; Krsjak, V.

    2006-01-01

    Measurements of interface trap density, effective generation lifetime (GL) and effective surface generation velocity have been performed using different methods on selected MOS structures prepared on nitrogen-doped Czochralski-grown (NCz) silicon. The application of the positron annihilation technique using a pulsed low energy positron system (PLEPS) focused on the detection of nitrogen-related defects in NCz silicon in the near surface region. In the case of p-type Cz silicon, all the results could be used for the testing of homogeneity. In n-type Cz silicon, positron annihilation was found insensitive to nitrogen doping

  8. Effects of sulfide treatment on electronic transport of graphene/n-type Si Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Zeng, Jian-Jhou; Lin, Yow-Jon, E-mail: rzr2390@yahoo.com.tw

    2014-05-01

    The present work reports the fabrication and detailed electrical properties of graphene/n-type Si Schottky diodes with and without sulfide treatment. The graphene/n-type Si Schottky diode without sulfide treatment shows a poor rectifying behavior with an ideality factor (η) of 4.2 and high leakage. η > 2 implies that the interfacial defects influence the electronic conduction through the device. However, the graphene/n-type Si Schottky diode with sulfide treatment for 5 min shows a good rectifying behavior with η of 1.8 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the reduction of the defect density. These experimental demonstrations suggest that it may be possible to minimize the adverse effects of the interface states to obtain functional devices using sulfide treatment. In addition, the graphene/n-type Si Schottky diode with sulfide treatment for 10 min shows a poor rectifying behavior with η of 2.5 and high leakage. Note, a suitable sulfide treatment time is an important issue for improving the device performance. - Highlights: • Graphene/Si diodes with sulfide treatment for 5 min show a good rectifying behavior. • Graphene/Si diodes without sulfide treatment show a poor rectifying behavior. • The interfacial defects of Schottky diodes were controlled by sulfide treatment. • Such an improvement indicates that a good passivation is formed at the interface. • A suitable sulfide treatment time is an important issue for improving performances.

  9. High power Co3O4/ZnO p–n type piezoelectric transducer

    International Nuclear Information System (INIS)

    Hu, Yuh-Chung; Lee, Tsung-Han; Chang, Pei-Zen; Su, Pei-Chen

    2015-01-01

    Enhancing the output power of piezoelectric transducer is essential in order to supply sufficient and sustainable power to wireless sensor nodes or electronic devices. In this work, a Co 3 O 4 /ZnO p–n type power piezoelectric transducer which can be operated at low frequencies has been developed by utilizing n-type semiconducting zinc oxide (ZnO) and p-type semiconducting tricobalt tetroxide (Co 3 O 4 ). We utilize ZnO to be the piezoelectric transducer and build a multi-layer (Au/Co 3 O 4 /ZnO/Ti) thin film structure. The ZnO thin film with preferred orientation along the (002) plane was deposited under optimized deposition conditions on the flexible titanium (Ti) foil with thickness of 80 μm. The Co 3 O 4 /ZnO interface forms a p–n junction and increases the difference in Fermi levels between the two electrodes, resulting in the great enhancement of output power. The measured output power of the p–n type piezoelectric transducer with optimal resistance of 100 kΩ is 10.4 μW at low operating frequency of 37 Hz, which is 10.9 times of output power of ZnO piezoelectric transducers. - Highlights: • Deposited zinc oxide performed good piezoelectric coefficient. • ZnO thin film with preferred orientation along the (002) plane was deposited. • A p–n type piezoelectric transducer with enhanced output power was fabricated. • 10.9 times increment in output power was obtained. • Increase of difference in Fermi level and p–n junction formation was explained

  10. Effects of sulfide treatment on electronic transport of graphene/n-type Si Schottky diodes

    International Nuclear Information System (INIS)

    Zeng, Jian-Jhou; Lin, Yow-Jon

    2014-01-01

    The present work reports the fabrication and detailed electrical properties of graphene/n-type Si Schottky diodes with and without sulfide treatment. The graphene/n-type Si Schottky diode without sulfide treatment shows a poor rectifying behavior with an ideality factor (η) of 4.2 and high leakage. η > 2 implies that the interfacial defects influence the electronic conduction through the device. However, the graphene/n-type Si Schottky diode with sulfide treatment for 5 min shows a good rectifying behavior with η of 1.8 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the reduction of the defect density. These experimental demonstrations suggest that it may be possible to minimize the adverse effects of the interface states to obtain functional devices using sulfide treatment. In addition, the graphene/n-type Si Schottky diode with sulfide treatment for 10 min shows a poor rectifying behavior with η of 2.5 and high leakage. Note, a suitable sulfide treatment time is an important issue for improving the device performance. - Highlights: • Graphene/Si diodes with sulfide treatment for 5 min show a good rectifying behavior. • Graphene/Si diodes without sulfide treatment show a poor rectifying behavior. • The interfacial defects of Schottky diodes were controlled by sulfide treatment. • Such an improvement indicates that a good passivation is formed at the interface. • A suitable sulfide treatment time is an important issue for improving performances

  11. Study of polarization phenomena in n-type CdZnTe

    Czech Academy of Sciences Publication Activity Database

    Elhadidy, Hassan; Dědic, V.; Franc, J.; Grill, R.

    2014-01-01

    Roč. 47, č. 5 (2014), Art. number 055104 ISSN 0022-3727 R&D Projects: GA MŠk(CZ) ED1.1.00/02.0068; GA MŠk(CZ) EE2.3.20.0214 Institutional support: RVO:68081723 Keywords : n-type CZT * polarization * electron de-trapping * Pockels effect Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.721, year: 2014

  12. Bi2O2Se nanosheet: An excellent high-temperature n-type thermoelectric material

    Science.gov (United States)

    Yu, Jiabing; Sun, Qiang

    2018-01-01

    Motivated by the recent synthesis of an ultrathin film of layered Bi2O2Se [Wu et al., Nat. Nanotechnol. 12, 530 (2017); Wu et al., Nano Lett. 17, 3021 (2017)], we have systematically studied the thermoelectric properties of a Bi2O2Se nanosheet using first principles density functional theory combined with semiclassical Boltzmann transport theory. The calculated results indicate that the Bi2O2Se nanosheet exhibits a figure of merit (ZT) of 3.35 for optimal n-type doping at 800 K, which is much larger than the ZT value of 2.6 at 923 K in SnSe known as the most efficient thermoelectric material [Zhao et al., Nature 508, 373 (2014)]. Equally important, the high ZT in the n-type doped Bi2O2Se nanosheet highlights the efficiency of the reduced dimension on improving thermoelectric performance as compared with strain engineering by which the ZT of n-type doped bulk Bi2O2Se cannot be effectively enhanced.

  13. Determination of carrier diffusion length in p- and n-type GaN

    Science.gov (United States)

    Hafiz, Shopan; Metzner, Sebastian; Zhang, Fan; Monavarian, Morteza; Avrutin, Vitaliy; Morkoç, Hadis; Karbaum, Christopher; Bertram, Frank; Christen, Jürgen; Gil, Bernard; Özgür, Ümit

    2014-03-01

    Diffusion lengths of photo-excited carriers along the c-direction were determined from photoluminescence (PL) measurements in p- and n-type GaN epitaxial layers grown on c-plane sapphire by metal-organic chemical vapor deposition. The investigated samples incorporate a 6 nm thick In0.15Ga0.85N active layer capped with either 500 nm p- GaN or 1300 nm n-GaN. The top GaN layers were etched in steps and PL from the InGaN active region and the underlying layers was monitored as a function of the top GaN thickness upon photogeneration near the surface region by above bandgap excitation. Taking into consideration the absorption in the active and underlying layers, the diffusion lengths at 295 K and at 15 K were measured to be about 92 ± 7 nm and 68 ± 7 nm for Mg-doped p-type GaN and 432 ± 30 nm and 316 ± 30 nm for unintentionally doped n-type GaN, respectively. Cross-sectional cathodoluminescence line-scan measurement was performed on a separate sample and the diffusion length in n-type GaN was measured to be 280 nm.

  14. Opioid inhibition of N-type Ca2+ channels and spinal analgesia couple to alternative splicing.

    Science.gov (United States)

    Andrade, Arturo; Denome, Sylvia; Jiang, Yu-Qiu; Marangoudakis, Spiro; Lipscombe, Diane

    2010-10-01

    Alternative pre-mRNA splicing occurs extensively in the nervous systems of complex organisms, including humans, considerably expanding the potential size of the proteome. Cell-specific alternative pre-mRNA splicing is thought to optimize protein function for specialized cellular tasks, but direct evidence for this is limited. Transmission of noxious thermal stimuli relies on the activity of N-type Ca(V)2.2 calcium channels in nociceptors. Using an exon-replacement strategy in mice, we show that mutually exclusive splicing patterns in the Ca(V)2.2 gene modulate N-type channel function in nociceptors, leading to a change in morphine analgesia. Exon 37a (e37a) enhances μ-opioid receptor-mediated inhibition of N-type calcium channels by promoting activity-independent inhibition. In the absence of e37a, spinal morphine analgesia is weakened in vivo but the basal response to noxious thermal stimuli is not altered. Our data suggest that highly specialized, discrete cellular responsiveness in vivo can be attributed to alternative splicing events regulated at the level of individual neurons.

  15. n-type diamond growth by phosphorus doping on (0 0 1)-oriented surface

    International Nuclear Information System (INIS)

    Kato, Hiromitsu; Makino, Toshiharu; Yamasaki, Satoshi; Okushi, Hideyo

    2007-01-01

    The properties of phosphorus incorporation for n-type doping of diamond are discussed and summarized. Doping of (0 0 1)-oriented diamond is introduced and compared with results achieved on (1 1 1) diamond. This review describes detailed procedures and conditions of plasma-enhanced chemical vapour deposition (CVD) growth and characteristics of electrical properties of phosphorus-doped diamond. The phosphorus incorporation was characterized by SIMS analysis including mapping. n-type conductivity is evaluated by Hall-effect measurements over a temperature regime of 300-1000 K. The crystal perfection of (0 0 1)-oriented n-type diamond is also evaluated by x-ray diffraction, Raman spectroscopy, reflection high-energy electron diffraction and cathodoluminescence analyses. The results show that phosphorus atoms are incorporated into the diamond network during (0 0 1) CVD diamond growth and that phosphorus acts as a donor as in (1 1 1)-oriented diamond. This result eliminates the restriction on substrate orientation, which had previously created a bottleneck in the development of diamond electronic devices. (review article)

  16. Realization of N-Type Semiconducting of Phosphorene through Surface Metal Doping and Work Function Study

    Directory of Open Access Journals (Sweden)

    Haocheng Sun

    2018-01-01

    Full Text Available Phosphorene becomes an important member of the layered nanomaterials since its discovery for the fabrication of nanodevices. In the experiments, pristine phosphorene shows p-type semiconducting with no exception. To reach its full capability, n-type semiconducting is a necessity. Here, we report the electronic structure engineering of phosphorene by surface metal atom doping. Five metal elements, Cu, Ag, Au, Li, and Na, have been considered which could form stable adsorption on phosphorene. These elements show patterns in their electron configuration with one valence electron in their outermost s-orbital. Among three group 11 elements, Cu can induce n-type degenerate semiconducting, while Ag and Au can only introduce localized impurity states. The distinct ability of Cu, compared to Ag and Au, is mainly attributed to the electronegativity. Cu has smaller electronegativity and thus denotes its electron to phosphorene, upshifting the Fermi level towards conduction band, resulting in n-type semiconducting. Ag and Au have larger electronegativity and hardly transfer electrons to phosphorene. Parallel studies of Li and Na doping support these findings. In addition, Cu doping effectively regulates the work function of phosphorene, which gradually decreases upon increasing Cu concentration. It is also interesting that Au can hardly change the work function of phosphorene.

  17. Influence of continuous electron irradiation and different modes of mechanic-thermal treatment on structure-phase composition of alloys 36NKhTYu and 40KhNYu

    International Nuclear Information System (INIS)

    Alontseva, D.L.; Suslov, S.E.; Kupchishin, A.I.; Plotnikov, S.V.; Petrov, V.A.

    2002-01-01

    Principal regularities of structure formation in strongly deformed alloys 36NKhTYu and 40KhNYu under aging in certain temperature range and after electron irradiation are revealed. Morphological features of precipitating phases with purpose of development of methods for getting of optimal structural states providing essential properties rate were determined. Data of electron microscopic examinations of structure-phase composition are compared with data on mechanical properties

  18. Interference effect on annealing temperature of A and E centers in silicon.

    Science.gov (United States)

    Fang, P. H.; Tanaka, T.

    1971-01-01

    The significance of recent experimental observations on the annealing defects in n-type silicon has been examined. The observed anomalous annealing temperatures of A and E centers and their impurity concentration dependence are explained by an interference between the two centers.

  19. Industrially feasible, dopant-free, carrier-selective contacts for high-efficiency silicon solar cells

    KAUST Repository

    Yang, Xinbo; Weber, Klaus; Hameiri, Ziv; De Wolf, Stefaan

    2017-01-01

    quality and cell processing, a remarkable efficiency of 22.1% has been achieved using an n-type silicon solar cell featuring a full-area TiO contact. Next, we demonstrate the compatibility of TiO contacts with an industrial contact-firing process, its low

  20. Transmission Electron Microscopy Studies of Electron-Selective Titanium Oxide Contacts in Silicon Solar Cells

    KAUST Repository

    Ali, Haider; Yang, Xinbo; Weber, Klaus; Schoenfeld, Winston V.; Davis, Kristopher O.

    2017-01-01

    In this study, the cross-section of electron-selective titanium oxide (TiO2) contacts for n-type crystalline silicon solar cells were investigated by transmission electron microscopy. It was revealed that the excellent cell efficiency of 21

  1. Effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids

    DEFF Research Database (Denmark)

    Onyshchenko, V.F.; Karachevtseva, L.A.; Lytvynenko, O.O.

    2017-01-01

    We calculated the dependence of effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids on the diameter of the cone base, the side of the pyramid base, the height of cone and pyramid. The numerical calculation shows that n-type polished plate of single crystal...

  2. Infrared induced visible emission from porous silicon: the mechanism of anodic oxidatio

    NARCIS (Netherlands)

    Kooij, Ernst S.; Rama, A.R.; Kelly, J.J.

    1997-01-01

    The visible luminescence caused by anodic oxidation of p-type porous silicon has been studied. It is shown that similar luminescence can be observed in n-type material by illumination with near-infrared light. Addition of a suitable reducing agent to the electrolyte solution can both suppress the

  3. Reduction of Peroxodisulfate at Porous and Crystalline Silicon Electrodes: An Anomaly

    NARCIS (Netherlands)

    Kooij, Ernst S.; Noordhoek, S.M.; Kelly, J.J.

    1996-01-01

    Electroluminescence from n-type porous silicon can be generated in solution by reduction of peroxodisulfate. It has been assumed that the SO4•- radical ion, formed in the first reduction step, injects a hole into the valence band of the porous semiconductor. The hole should subsequently undergo

  4. NH (X 3 summation -, v=1--3) formation and vibrational relaxation in electron-irradiated Ar/N2/H2 mixtures

    International Nuclear Information System (INIS)

    Dodd, J.A.; Lipson, S.J.; Flanagan, D.J.; Blumberg, W.A.M.; Person, J.C.; Green, B.D.

    1991-01-01

    Measurements of the dynamics of NH(X 3 summation - , v =1--3), created in electron-irradiated N 2 /H 2 and Ar/N 2 /H 2 mixtures, have been performed. Time-resolved Fourier spectroscopy was used to observe NH(v→v--1) vibrational fundamental band emission. Time-dependent populations were then determined by spectral fitting. Subsequent kinetic fitting of these populations using a single-quantum relaxation model and a power-law dependence of k v on v yielded the following NH(v =1--3) relaxation rate constants (units of 10 -14 cm 3 s -1 ): k v=1 (N 2 )=1.2±0.5, k v=2 (N 2 )=3.8±1.5, k v=3 (N 2 )=7.5±2.5; k v=1 (Ar)=0.2±0.1, k v=2 (Ar)=0.5±0.2, k v=3 (Ar)=0.8±0.3; k v=1 (H 2 )≤50, k v=2 (H 2 )≤100, k v=3 (H 2 )≤150. In addition, the N 2 /H 2 data provided a measurement of the nascent excited vibrational state distribution resulting from the reaction N( 2 D)+H 2 →NH(X,v)+H. The ratio NH(1):NH(2):NH(3) was found to be 1.0:0.97:0.81 (±0.28 in each value). Comparison of the observed nascent distribution with that of a statistical model suggests that the ratio NH(0):NH(1)=0.47. Using this derived distribution, we find the average product level left-angle v right-angle =1.6, and the fraction of the available product energy in vibration left-angle f v right-angle =0.44

  5. Thermoluminescence responses of photon- and electron-irradiated lithium potassium borate co-doped with Cu+Mg or Ti+Mg

    International Nuclear Information System (INIS)

    Alajerami, Y.S.M.; Hashim, S.; Ramli, A.T.; Saleh, M.A.; Saripan, M.I.; Alzimami, K.; Min Ung, Ngie

    2013-01-01

    New glasses Li 2 CO 3 –K 2 CO 3 –H 3 BO 3 (LKB) co-doped with CuO and MgO, or with TiO 2 and MgO, were synthesized by the chemical quenching technique. The thermoluminescence (TL) responses of LKB:Cu,Mg and LKB:Ti,Mg irradiated with 6 MV photons or 6 MeV electrons were compared in the dose range 0.5–4.0 Gy. The standard commercial dosimeter LiF:Mg,Ti (TLD-100) was used to calibrate the TL reader and as a reference in comparison of the TL properties of the new materials. The dependence of the responses of the new materials on 60 Co dose is linear in the range of 1–1000 Gy. The TL yields of both of the co-doped glasses and TLD-100 are greater for electron irradiation than for photon irradiation. The TL sensitivity of LKB:Ti,Mg is 1.3 times higher than the sensitivity of LKB:Cu,Mg and 12 times less than the sensitivity of TLD-100. The new TL dosimetric materials have low effective atomic numbers, good linearity of the dose responses, excellent signal reproducibility, and a simple glow curve structure. This combination of properties makes them suitable for radiation dosimetry. - Highlights: • Enhancement of about three times has been shown with the increment of MgO. • A comparison was carried out between the TL responses of the prepared dosimeters and TLD-100. • The prepared dosimeters show simple glow curve, low Z material and excellent reproducibility. • The TL measurements show a linear dose response in a long span of exposures. • The electron response shows 1.18 times greater than photon response for the prepared dosimeters

  6. Fat Necrosis After Partial-Breast Irradiation With Brachytherapy or Electron Irradiation Versus Standard Whole-Breast Radiotherapy-4-Year Results of a Randomized Trial

    International Nuclear Information System (INIS)

    Loevey, Katalin; Fodor, Janos; Major, Tibor; Szabo, Eva; Orosz, Zsolt; Sulyok, Zoltan; Janvary, Levente; Froehlich, Georgina; Kasler, Miklos; Polgar, Csaba

    2007-01-01

    Purpose: To examine the incidence and clinical relevance of fat necrosis after accelerated partial-breast irradiation (PBI) using interstitial high-dose-rate brachytherapy (HDR-BT) in comparison with partial-breast electron irradiation (ELE) and whole-breast irradiation (WBI). Methods and Materials: Between 1998 and 2004, 258 early-stage breast cancer patients were randomized to receive 50 Gy WBI (n = 130) or PBI (n = 128). The latter consisted of either 7 x 5.2 Gy HDR-BT (n = 88) or 50 Gy ELE (n = 40). The incidence of fat necrosis, its impact on cosmetic outcome, accompanying radiologic features, and clinical symptoms were evaluated. Results: The 4-year actuarial rate of fat necrosis was 31.1% for all patients, and 31.9%, 36.5%, and 17.7% after WBI, HDR-BT and ELE, respectively (p WBI/HDR-BT = 0.26; p WBI/ELE = 0.11; p ELE/HDR-BT = 0.025). The respective rate of asymptomatic fat necrosis was 20.2%, 25.3%, and 10% of patients. The incidence of symptomatic fat necrosis was not significantly different after WBI (8.5%), HDR-BT (11.4%), and ELE (7.5%). Symptomatic fat necrosis was significantly associated with a worse cosmetic outcome, whereas asymptomatic fat necrosis was not. Fat necrosis was detectable with mammography and/or ultrasound in each case. Additional imaging examinations were required in 21% of cases and aspiration cytology in 42%. Conclusions: Asymptomatic fat necrosis is a common adverse event of breast-conserving therapy, having no significant clinical relevance in the majority of the cases. The incidence of both symptomatic and asymptomatic fat necrosis is similar after conventional WBI and accelerated partial-breast HDR-BT

  7. Threshold irradiation dose for amorphization of silicon carbide

    International Nuclear Information System (INIS)

    Snead, L.L.; Zinkle, S.J.

    1997-01-01

    The amorphization of silicon carbide due to ion and electron irradiation is reviewed with emphasis on the temperature-dependent critical dose for amorphization. The effect of ion mass and energy on the threshold dose for amorphization is summarized, showing only a weak dependence near room temperature. Results are presented for 0.56 MeV silicon ions implanted into single crystal 6H-SiC as a function of temperature and ion dose. From this, the critical dose for amorphization is found as a function of temperature at depths well separated from the implanted ion region. Results are compared with published data generated using electrons and xenon ions as the irradiating species. High resolution TEM analysis is presented for the Si ion series showing the evolution of elongated amorphous islands oriented such that their major axis is parallel to the free surface. This suggests that surface or strain effects may be influencing the apparent amorphization threshold. Finally, a model for the temperature threshold for amorphization is described using the Si ion irradiation flux and the fitted interstitial migration energy which was found to be ∼0.56eV. This model successfully explains the difference in the temperature dependent amorphization behavior of SiC irradiated with 0.56 MeV Si + at 1 x 10 -3 dpa/s and with fission neutrons irradiated at 1 x 10 -6 dpa/s irradiated to 15 dpa in the temperature range of ∼340±10K

  8. Amorphous silicon/crystalline silicon heterojunctions for nuclear radiation detector applications

    International Nuclear Information System (INIS)

    Walton, J.T.; Hong, W.S.; Luke, P.N.; Wang, N.W.; Ziemba, F.P.

    1996-01-01

    Results on the characterization of the electrical properties of amorphous silicon films for the three different growth methods, RF sputtering, PECVD, and LPCVD are reported. The performance of these a-Si films as heterojunctions on high resistivity p-type and n-type crystalline silicon is examined by measuring the noise, leakage current and the alpha particle response of 5 mm diameter detector structures. It is demonstrated that heterojunction detectors formed by RF sputtered films and PECVD films are comparable in performance with conventional surface barrier detectors. The results indicate that the a-Si/c-Si heterojunctions have the potential to greatly simplify detector fabrication. Directions for future avenues of nuclear particle detector development are indicated

  9. Passivation mechanism in silicon heterojunction solar cells with intrinsic hydrogenated amorphous silicon oxide layers

    Science.gov (United States)

    Deligiannis, Dimitrios; van Vliet, Jeroen; Vasudevan, Ravi; van Swaaij, René A. C. M. M.; Zeman, Miro

    2017-02-01

    In this work, we use intrinsic hydrogenated amorphous silicon oxide layers (a-SiOx:H) with varying oxygen content (cO) but similar hydrogen content to passivate the crystalline silicon wafers. Using our deposition conditions, we obtain an effective lifetime (τeff) above 5 ms for cO ≤ 6 at. % for passivation layers with a thickness of 36 ± 2 nm. We subsequently reduce the thickness of the layers using an accurate wet etching method to ˜7 nm and deposit p- and n-type doped layers fabricating a device structure. After the deposition of the doped layers, τeff appears to be predominantly determined by the doped layers themselves and is less dependent on the cO of the a-SiOx:H layers. The results suggest that τeff is determined by the field-effect rather than by chemical passivation.

  10. Silicon: electrochemistry and luminescence

    NARCIS (Netherlands)

    Kooij, Ernst Stefan

    1997-01-01

    The electrochemistry of crystalline and porous silicon and the luminescence from porous silicon has been studied. One chapter deals with a model for the anodic dissolution of silicon in HF solution. In following chapters both the electrochemistry and various ways of generating visible

  11. Graphene electrodes for n-type organic field-effect transistors

    DEFF Research Database (Denmark)

    Henrichsen, Henrik Hartmann; Boggild, P.

    2010-01-01

    This work presents a convenient and contamination safe E-beam lithography process for microstructuring of graphene flakes. Exfoliated graphene flakes were deposited on oxidized silicon wafers and subsequently patterned by E-beam lithography, to be used as source and drain electrodes in an organic...

  12. Solution-processed, molecular photovoltaics that exploit hole transfer from non-fullerene, n-type materials

    KAUST Repository

    Douglas, Jessica D.; Chen, Mark S.; Niskala, Jeremy R.; Lee, Olivia P.; Yiu, Alan T.; Young, Eric P.; Frechet, Jean

    2014-01-01

    Solution-processed organic photovoltaic devices containing p-type and non-fullerene n-type small molecules obtain power conversion efficiencies as high as 2.4%. The optoelectronic properties of the n-type material BT(TTI-n12)2 allow these devices

  13. a Study of Oxygen Precipitation in Heavily Doped Silicon.

    Science.gov (United States)

    Graupner, Robert Kurt

    processes. This could lead to more effective control and use of oxygen precipitation for gettering. One of the principal purposes of this thesis is the extension of the infrared interstitial oxygen measurement technique to situations outside the measurement capacities of the standard technique. These situations include silicon slices exhibiting interfering precipitate absorption bands and heavily doped n-type silicon wafers. A new method is presented for correcting for the effect of multiple reflections in silicon wafers with optically rough surfaces. The technique for the measurement of interstitial oxygen in heavily doped n-type wafers is then used to perform a comparative study of oxygen precipitation in heavily antimony doped (.035 ohm-cm) silicon and lightly doped p-type silicon. A model is presented to quantitatively explain the observed suppression of defect formation in heavily doped n-type wafers.

  14. TCAD analysis of graphene silicon Schottky junction solar cell

    Science.gov (United States)

    Kuang, Yawei; Liu, Yushen; Ma, Yulong; Xu, Jing; Yang, Xifeng; Feng, Jinfu

    2015-08-01

    The performance of graphene based Schottky junction solar cell on silicon substrate is studied theoretically by TCAD Silvaco tools. We calculate the current-voltage curves and internal quantum efficiency of this device at different conditions using tow dimensional model. The results show that the power conversion efficiency of Schottky solar cell dependents on the work function of graphene and the physical properties of silicon such as thickness and doping concentration. At higher concentration of 1e17cm-3 for n-type silicon, the dark current got a sharp rise compared with lower doping concentration which implies a convert of electron emission mechanism. The biggest fill factor got at higher phos doping predicts a new direction for higher performance graphene Schottky solar cell design.

  15. Resonant tunnelling from nanometre-scale silicon field emission cathodes

    International Nuclear Information System (INIS)

    Johnson, S.; Markwitz, A.

    2005-01-01

    In this paper we report the field emission properties of self-assembled silicon nanostructures formed on an n-type silicon (100) substrate by electron beam annealing. The nanostructures are square based, with an average height of 8 nm and are distributed randomly over the entire substrate surface. Following conditioning, the silicon nanostructure field emission characteristics become stable and reproducible with electron emission occurring for fields as low as 3 Vμm-1. At higher fields, a superimposed on a background current well described by conventional Fowler-Nordheim theory. These current peaks are understood to result from enhanced tunnelling through resonant states formed at the substrate-nanostructure and nanostructure-vacuum interface. (author). 13 refs., 3 figs

  16. Design of a charge sensitive preamplifier on high resistivity silicon

    International Nuclear Information System (INIS)

    Radeka, V.; Rehak, P.; Rescia, S.; Gatti, E.; Longoni, A.; Sampietro, M.; Holl, P.; Strueder, L.; Kemmer, J.

    1987-01-01

    A low noise, fast charge sensitive preamplifier was designed on high resistivity, detector grade silicon. It is built at the surface of a fully depleted region of n-type silicon. This allows the preamplifier to be placed very close to a detector anode. The preamplifier uses the classical input cascode configuration with a capacitor and a high value resistor in the feedback loop. The output stage of the preamplifier can drive a load up to 20pF. The power dissipation of the preamplifier is 13mW. The amplifying elements are ''Single Sided Gate JFETs'' developed especially for this application. Preamplifiers connected to a low capacitance anode of a drift type detector should achieve a rise time of 20ns and have an equivalent noise charge (ENC), after a suitable shaping, of less than 50 electrons. This performance translates to a position resolution better than 3μm for silicon drift detectors. 6 refs., 9 figs

  17. Influence of external effects on the electron silicon properties

    International Nuclear Information System (INIS)

    Orazgulyev, B.; Bigozha, O.D.

    2005-01-01

    It is noted, that study of angular dependence of longitudinal piezo-resistance of n-type silicon presents the both scientific and practical interest because the obtained data could serve the ground for creating a high-sensitive piezo-sensors. Measurement of angular dependence allows objectively estimate the errors of anisotropy parameter determination, constant of deformation potential caused of mistakes in maintenance of crystallographic directions during the samples production process. In the case of X||J||[111] at one-axis deformation a new kind of piezo-effect in electron silicon is revealed. It is explained by transformation of iso-energy rotation ellipsoid into three-axis ellipsoid at presence of shear silicon crystal deformation

  18. Luminescence and optical absorption determination in porous silicon

    International Nuclear Information System (INIS)

    Nogal, U.; Calderon, A.; Marin, E.; Rojas T, J. B.; Juarez, A. G.

    2012-10-01

    We applied the photoacoustic spectroscopy technique in order to obtain the optical absorption spectrum in porous silicon samples prepared by electrochemical anodic etching on n-type, phosphorous doped, (100)-oriented crystal-line silicon wafer with thickness of 300 μm and 1-5 ωcm resistivity. The porous layers were prepared with etching times of 13, 20, 30, 40 and 60 minutes. Also, we realized a comparison among the optical absorption spectrum with the photoluminescence and photo reflectance ones, both obtained at room temperature. Our results show that the absorption spectrum of the samples of porous silicon depends notably of the etching time an it consist of two distinguishable absorption bands, one in the Vis region and the other one in the UV region. (Author)

  19. Silicon heterojunction transistor

    International Nuclear Information System (INIS)

    Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

    1979-01-01

    SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

  20. The chemistry of silicon

    CERN Document Server

    Rochow, E G; Emeléus, H J; Nyholm, Ronald

    1975-01-01

    Pergamon Texts in Organic Chemistry, Volume 9: The Chemistry of Silicon presents information essential in understanding the chemical properties of silicon. The book first covers the fundamental aspects of silicon, such as its nuclear, physical, and chemical properties. The text also details the history of silicon, its occurrence and distribution, and applications. Next, the selection enumerates the compounds and complexes of silicon, along with organosilicon compounds. The text will be of great interest to chemists and chemical engineers. Other researchers working on research study involving s

  1. Silicon Microspheres Photonics

    International Nuclear Information System (INIS)

    Serpenguzel, A.

    2008-01-01

    Electrophotonic integrated circuits (EPICs), or alternatively, optoelectronic integrated circuit (OEICs) are the natural evolution of the microelectronic integrated circuit (IC) with the addition of photonic capabilities. Traditionally, the IC industry has been based on group IV silicon, whereas the photonics industry on group III-V semiconductors. However, silicon based photonic microdevices have been making strands in siliconizing photonics. Silicon microspheres with their high quality factor whispering gallery modes (WGMs), are ideal candidates for wavelength division multiplexing (WDM) applications in the standard near-infrared communication bands. In this work, we will discuss the possibility of using silicon microspheres for photonics applications in the near-infrared

  2. N-type doping effect of single-walled carbon nanotubes with aromatic amines

    Energy Technology Data Exchange (ETDEWEB)

    Koizhaiganova, Raushan B.; Hwang, Doo Hee; Lee, Cheol Jin; Dettlaff-Weglikowska, Urszula [School of Electrical Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Roth, Siegmar [School of Electrical Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Sineurop Nanotech GmbH, Nobelstreet15, 70569 Stuttgart (Germany)

    2010-12-15

    We investigated the chemical doping of the single-walled carbon nanotubes (SWCNTs) networks by a treatment with aromatic amines. Adsorption and intercalation of amine molecules in bundled SWCNTs leads to typical n-type doping observed already for alkali metals. The electron donation to SWCNTs is demonstrated by the X-ray-induced photoelectron spectra (XPS), where the carbon C 1s peak observed at 284.4 eV for the sp{sup 2} carbon in pristine samples is shifted by up to 0.3 eV to higher binding energy upon chemical treatment. The development of a Breit-Wigner-Fano component on the lower energy side of the G{sup -} mode in the Raman spectrum as well as a shift of the G{sup +} to lower frequency provide evidence for charge accumulation in the nanotube {pi} system, and indication for the n-type doping. The spectroscopic changes are accompanied by the modification of the electrical properties of the SWCNTs. A reduction of conductivity depends on the doping level and implies the decreasing concentration of the charge carriers in the naturally p-doped tubes. Comparing the two selected n-type dopants, the tetramethyl-p-phenylenediamine, shows more pronounced changes in the XPS and the Raman spectra than tetramethylpyrazine, indicating that the sp{sup 3} hybridization of nitrogen in the amine groups attached to phenyl ring is much more effective in interaction with the tube {pi} system than the sp{sup 2} hybridization of nitrogen in the aromatic pyrazine ring. (Copyright copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. New Method for Determination of Electrically Inactive Phosphorus in n-type Emitters

    OpenAIRE

    Steyer, Michael; Dastgheib-Shirazi, Amir; Hahn, Giso; Terheiden, Barbara

    2015-01-01

    The precise knowledge of the amount and the location in depth of inactive phosphorus in an n-type emitter is still a challenge. As a new approach, we determine the total amount of phosphorus (P dose) in the emitter stepwise in dependence of etching depth with the characterization tool ICP-OES. A comparison of the data with the electrically active P concentration profile measured by ECV allows to determine in which depths electrically inactive phosphorus is present. For a highly doped emitter,...

  4. High resolution optical spectroscopy of air-induced electrical instabilities in n-type polymer semiconductors.

    Science.gov (United States)

    Di Pietro, Riccardo; Sirringhaus, Henning

    2012-07-03

    We use high-resolution charge-accumulation optical spectroscopy to measure charge accumulation in the channel of an n-type organic field-effect transistor. We monitor the degradation of device performance in air, correlate the onset voltage shift with the reduction of charge accumulated in the polymer semiconductor, and explain the results in view of the redox reaction between the polymer, water and oxygen in the accumulation layer. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Integrating carbon nanotubes into silicon by means of vertical carbon nanotube field-effect transistors

    KAUST Repository

    Li, Jingqi; Wang, Qingxiao; Yue, Weisheng; Guo, Zaibing; LI, LIANG; Zhao, Chao; Wang, Xianbin; Abutaha, Anas I.; Alshareef, Husam N.; Zhang, Yafei; Zhang, Xixiang

    2014-01-01

    Single-walled carbon nanotubes have been integrated into silicon for use in vertical carbon nanotube field-effect transistors (CNTFETs). A unique feature of these devices is that a silicon substrate and a metal contact are used as the source and drain for the vertical transistors, respectively. These CNTFETs show very different characteristics from those fabricated with two metal contacts. Surprisingly, the transfer characteristics of the vertical CNTFETs can be either ambipolar or unipolar (p-type or n-type) depending on the sign of the drain voltage. Furthermore, the p-type/n-type character of the devices is defined by the doping type of the silicon substrate used in the fabrication process. A semiclassical model is used to simulate the performance of these CNTFETs by taking the conductance change of the Si contact under the gate voltage into consideration. The calculation results are consistent with the experimental observations. This journal is © the Partner Organisations 2014.

  6. Epitaxy - a new technology for fabrication of advanced silicon radiation detectors

    International Nuclear Information System (INIS)

    Kemmer, J.; Wiest, F.; Pahlke, A.; Boslau, O.; Goldstrass, P.; Eggert, T.; Schindler, M.; Eisele, I.

    2005-01-01

    Twenty five years after the introduction of the planar process to the fabrication of silicon radiation detectors a new technology, which replaces the ion implantation doping by silicon epitaxy is presented. The power of this new technique is demonstrated by fabrication of silicon drift detectors (SDDs), whereby both the n-type and p-type implants are replaced by n-type and p-type epi-layers. The very first SDDs ever produced with this technique show energy resolutions of 150 eV for 55 Fe at -35 deg C. The area of the detectors is 10 mm 2 and the thickness 300 μm. The high potential of epitaxy for future detectors with integrated complex electronics is described

  7. Comparison on mechanical properties of heavily phosphorus- and arsenic-doped Czochralski silicon wafers

    Science.gov (United States)

    Yuan, Kang; Sun, Yuxin; Lu, Yunhao; Liang, Xingbo; Tian, Daxi; Ma, Xiangyang; Yang, Deren

    2018-04-01

    Heavily phosphorus (P)- and arsenic (As)-doped Czochralski silicon (CZ-Si) wafers generally act as the substrates for the epitaxial silicon wafers used to fabricate power and communication devices. The mechanical properties of such two kinds of n-type heavily doped CZ silicon wafers are vital to ensure the quality of epitaxial silicon wafers and the manufacturing yields of devices. In this work, the mechanical properties including the hardness, Young's modulus, indentation fracture toughness and the resistance to dislocation motion have been comparatively investigated for heavily P- and As-doped CZ-Si wafers. It is found that heavily P-doped CZ-Si possesses somewhat higher hardness, lower Young's modulus, larger indentation fracture toughness and stronger resistance to dislocation motion than heavily As-doped CZ-Si. The mechanisms underlying this finding have been tentatively elucidated by considering the differences in the doping effects of P and As in silicon.

  8. Nanopatterned Silicon Substrate Use in Heterojunction Thin Film Solar Cells Made by Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Shao-Ze Tseng

    2014-01-01

    Full Text Available This paper describes a method for fabricating silicon heterojunction thin film solar cells with an ITO/p-type a-Si : H/n-type c-Si structure by radiofrequency magnetron sputtering. A short-circuit current density and efficiency of 28.80 mA/cm2 and 8.67% were achieved. Novel nanopatterned silicon wafers for use in cells are presented. Improved heterojunction cells are formed on a nanopatterned silicon substrate that is prepared with a self-assembled monolayer of SiO2 nanospheres with a diameter of 550 nm used as an etching mask. The efficiency of the nanopattern silicon substrate heterojunction cells was 31.49% greater than that of heterojunction cells on a flat silicon wafer.

  9. Capacitance transient study of a bistable deep level in e--irradiated n-type 4H-SiC

    International Nuclear Information System (INIS)

    Beyer, F C; Hemmingsson, C G; Pedersen, H; Henry, A; Janzén, E; Isoya, J; Ohshima, T; Morishita, N

    2012-01-01

    Using capacitance transient techniques, a bistable centre, called FB centre here, was observed in electron irradiated 4H-SiC. In configuration A, the deep level known as EH5 (E a = E C - 1.07 eV) is detected in the deep level transient spectroscopy spectrum, whereas for configuration B no obvious deep level is observed in the accessible part of the band gap. Isochronal annealing revealed the transition temperatures to be T A→B > 730 K and for the opposite process T B→A ≈ 710 K. The energy needed to conduct the transformations were determined to be E A (A → B) = (2.1 ± 0.1) eV and E A (B → A) = (2.3 ± 0.1) eV, respectively. The pre-factor indicated an atomic jump process for the opposite transition A → B and a charge carrier-emission dominated process in the case of B → A. Minority charge carrier injection enhanced the transformation from configuration B to configuration A by lowering the transition barrier by about 1.4 eV. Since the bistable FB centre is already present after low-energy electron irradiation (200 keV), it is likely related to carbon.

  10. Fast Pulling of n-Type Si Ingots for Enhanced Si Solar Cell Production

    Science.gov (United States)

    Kim, Kwanghun; Park, Sanghyun; Park, Jaechang; Pang, Ilsun; Ryu, Sangwoo; Oh, Jihun

    2018-03-01

    Reducing the manufacturing costs of silicon substrates is an important issue in the silicon-based solar cell industry. In this study, we developed a high-throughput ingot growth method by accelerating the pulling speed in the Czochralski process. By controlling the heat flow of the ingot growth chamber and at the solid-liquid interfaces, the pulling speed of an ingot could be increased by 15% compared to the conventional method, while retaining high quality. The wafer obtained at a high pulling speed showed an enhanced minority carrier lifetime compared with conventional wafers, due to the vacancy passivation effect, and also demonstrated comparable bulk resistivity and impurities. The results in this work are expected to open a new way to enhance the productivity of Si wafers used for Si solar cells, and therefore, to reduce the overall manufacturing cost.

  11. n-Type Conductivity of Cu2O Thin Film Prepared in Basic Aqueous Solution Under Hydrothermal Conditions

    Science.gov (United States)

    Ursu, Daniel; Miclau, Nicolae; Miclau, Marinela

    2018-03-01

    We report for the first time in situ hydrothermal synthesis of n-type Cu2O thin film using strong alkaline solution. The use of copper foil as substrate and precursor material, low synthesis temperature and short reaction time represent the arguments of a new, simple, inexpensive and high field synthesis method for the preparation of n-type Cu2O thin film. The donor concentration of n-type Cu2O thin film obtained at 2 h of reaction time has increased two orders of magnitude than previous reported values. We have demonstrated n-type conduction in Cu2O thin film prepared in strong alkaline solution, in the contradiction with the previous works. Based on experimental results, the synthesis mechanism and the origin of n-type photo-responsive behavior of Cu2O thin film were discussed. We have proposed that the unexpected n-type character could be explained by H doping of Cu2O thin film in during of the hydrothermal synthesis that caused the p-to-n conductivity-type conversion. Also, this work raises new questions about the origin of n-type conduction in Cu2O thin film, the influence of the synthesis method on the nature of the intrinsic defects and the electrical conduction behavior.

  12. Annealing effect on Schottky barrier inhomogeneity of graphene/n-type Si Schottky diodes

    International Nuclear Information System (INIS)

    Lin, Yow-Jon; Lin, Jian-Huang

    2014-01-01

    Highlights: • The current–voltage characteristics of graphene/n-type Si devices were measured. • The ideality factor increases with the decrease measurement temperatures. • Such behavior is attributed to Schottky barrier inhomogeneities. • Both Schottky barrier inhomogeneity and the T 0 effect are affected by annealing. • Stoichiometry of SiO x has a noticeable effect on the inhomogeneous barriers. - Abstract: The current–voltage characteristics of graphene/n-type Si (n-Si) Schottky diodes with and without annealing were measured in the temperature range of −120 to 30 °C and analyzed on the basis of thermionic emission theory. It is found that the barrier height decreases and the ideality factor increases with the decrease measurement temperatures. Such behavior is attributed to Schottky barrier inhomogeneities. It is shown that both the barrier height and the ideality factor can be tuned by changing the annealing temperature. Through the analysis, it can be suspected that a SiO x layer at the graphene/n-Si interfaces influences the electronic conduction through the device and stoichiometry of SiO x is affected by annealing treatment. In addition, both Schottky barrier inhomogeneity and the T 0 effect are affected by annealing treatment, implying that stoichiometry of SiO x has a noticeable effect on the inhomogeneous barriers of graphene/n-Si Schottky diodes

  13. Chemical-free n-type and p-type multilayer-graphene transistors

    Energy Technology Data Exchange (ETDEWEB)

    Dissanayake, D. M. N. M., E-mail: nandithad@voxtel-inc.com [Voxtel Inc, Lockey Laboratories, University of Oregon, Eugene Oregon 97402 (United States); Eisaman, M. D. [Sustainable Energy Technologies Department, Brookhaven National Laboratory, Upton, New York 11973 (United States); Department of Electrical and Computer Engineering, Stony Brook University, Stony Brook, New York 11794 (United States); Department of Physics and Astronomy, Stony Brook University, Stony Brook, New York 11794 (United States)

    2016-08-01

    A single-step doping method to fabricate n- and p-type multilayer graphene (MG) top-gate field effect transistors (GFETs) is demonstrated. The transistors are fabricated on soda-lime glass substrates, with the n-type doping of MG caused by the sodium in the substrate without the addition of external chemicals. Placing a hydrogen silsesquioxane (HSQ) barrier layer between the MG and the substrate blocks the n-doping, resulting in p-type doping of the MG above regions patterned with HSQ. The HSQ is deposited in a single fabrication step using electron beam lithography, allowing the patterning of arbitrary sub-micron spatial patterns of n- and p-type doping. When a MG channel is deposited partially on the barrier and partially on the glass substrate, a p-type and n-type doping profile is created, which is used for fabricating complementary transistors pairs. Unlike chemically doped GFETs in which the external dopants are typically introduced from the top, these substrate doped GFETs allow for a top gate which gives a stronger electrostatic coupling to the channel, reducing the operating gate bias. Overall, this method enables scalable fabrication of n- and p-type complementary top-gated GFETs with high spatial resolution for graphene microelectronic applications.

  14. Oxygen vacancies: The origin of n -type conductivity in ZnO

    Science.gov (United States)

    Liu, Lishu; Mei, Zengxia; Tang, Aihua; Azarov, Alexander; Kuznetsov, Andrej; Xue, Qi-Kun; Du, Xiaolong

    2016-06-01

    Oxygen vacancy (VO) is a common native point defect that plays crucial roles in determining the physical and chemical properties of metal oxides such as ZnO. However, fundamental understanding of VO is still very sparse. Specifically, whether VO is mainly responsible for the n -type conductivity in ZnO has been still unsettled in the past 50 years. Here, we report on a study of oxygen self-diffusion by conceiving and growing oxygen-isotope ZnO heterostructures with delicately controlled chemical potential and Fermi level. The diffusion process is found to be predominantly mediated by VO. We further demonstrate that, in contrast to the general belief of their neutral attribute, the oxygen vacancies in ZnO are actually +2 charged and thus responsible for the unintentional n -type conductivity as well as the nonstoichiometry of ZnO. The methodology can be extended to study oxygen-related point defects and their energetics in other technologically important oxide materials.

  15. Molecular architecture of the N-type ATPase rotor ring from Burkholderia pseudomallei.

    Science.gov (United States)

    Schulz, Sarah; Wilkes, Martin; Mills, Deryck J; Kühlbrandt, Werner; Meier, Thomas

    2017-04-01

    The genome of the highly infectious bacterium Burkholderia pseudomallei harbors an atp operon that encodes an N-type rotary ATPase, in addition to an operon for a regular F-type rotary ATPase. The molecular architecture of N-type ATPases is unknown and their biochemical properties and cellular functions are largely unexplored. We studied the B. pseudomallei N 1 N o -type ATPase and investigated the structure and ion specificity of its membrane-embedded c-ring rotor by single-particle electron cryo-microscopy. Of several amphiphilic compounds tested for solubilizing the complex, the choice of the low-density, low-CMC detergent LDAO was optimal in terms of map quality and resolution. The cryoEM map of the c-ring at 6.1 Å resolution reveals a heptadecameric oligomer with a molecular mass of ~141 kDa. Biochemical measurements indicate that the c 17 ring is H + specific, demonstrating that the ATPase is proton-coupled. The c 17 ring stoichiometry results in a very high ion-to-ATP ratio of 5.7. We propose that this N-ATPase is a highly efficient proton pump that helps these melioidosis-causing bacteria to survive in the hostile, acidic environment of phagosomes. © 2017 The Authors. Published under the terms of the CC BY 4.0 license.

  16. Designing small molecule polyaromatic p- and n-type semiconductor materials for organic electronics

    KAUST Repository

    Collis, Gavin E.

    2015-12-22

    By combining computational aided design with synthetic chemistry, we are able to identify core 2D polyaromatic small molecule templates with the necessary optoelectronic properties for p- and n-type materials. By judicious selection of the functional groups, we can tune the physical properties of the material making them amenable to solution and vacuum deposition. In addition to solubility, we observe that the functional group can influence the thin film molecular packing. By developing structure-property relationships (SPRs) for these families of compounds we observe that some compounds are better suited for use in organic solar cells, while others, varying only slightly in structure, are favoured in organic field effect transistor devices. We also find that the processing conditions can have a dramatic impact on molecular packing (i.e. 1D vs 2D polymorphism) and charge mobility; this has implications for material and device long term stability. We have developed small molecule p- and n-type materials for organic solar cells with efficiencies exceeding 2%. Subtle variations in the functional groups of these materials produces p- and ntype materials with mobilities higher than 0.3 cm2/Vs. We are also interested in using our SPR approach to develop materials for sensor and bioelectronic applications.

  17. On the Phase Separation in n-Type Thermoelectric Half-Heusler Materials

    Directory of Open Access Journals (Sweden)

    Michael Schwall

    2018-04-01

    Full Text Available Half-Heusler compounds have been in focus as potential materials for thermoelectric energy conversion in the mid-temperature range, e.g., as in automotive or industrial waste heat recovery, for more than ten years now. Because of their mechanical and thermal stability, these compounds are advantageous for common thermoelectric materials such as Bi 2 Te 3 , SiGe, clathrates or filled skutterudites. A further advantage lies in the tunability of Heusler compounds, allowing one to avoid expensive and toxic elements. Half-Heusler compounds usually exhibit a high electrical conductivity σ , resulting in high power factors. The main drawback of half-Heusler compounds is their high lattice thermal conductivity. Here, we present a detailed study of the phase separation in an n-type Heusler materials system, showing that the Ti x Zr y Hf z NiSn system is not a solid solution. We also show that this phase separation is key to the thermoelectric high efficiency of n-type Heusler materials. These results strongly underline the importance of phase separation as a powerful tool for designing highly efficient materials for thermoelectric applications that fulfill the industrial demands of a thermoelectric converter.

  18. Study on anisotropy of n-type Mg3Sb2-based thermoelectric materials

    Science.gov (United States)

    Song, Shaowei; Mao, Jun; Shuai, Jing; Zhu, Hangtian; Ren, Zhensong; Saparamadu, Udara; Tang, Zhongjia; Wang, Bo; Ren, Zhifeng

    2018-02-01

    The recent discovery of a high thermoelectric figure of merit (ZT) in an n-type Mg3Sb2-based Zintl phase triggered an intense research effort to pursue even higher ZT. Based on our previous report on Mg3.1Nb0.1Sb1.5Bi0.49Te0.01, we report here that partial texturing in the (001) plane is achieved by double hot pressing, which is further confirmed by the rocking curves of the (002) plane. The textured samples of Mg3.1Nb0.1Sb1.5Bi0.49Te0.01 show a much better average performance in the (00l) plane. Hall mobility is significantly improved to ˜105 cm2 V-1 s-1 at room temperature in the (00l) plane due to texturing, resulting in higher electrical conductivity, a higher power factor of ˜18 μW cm-1 K-2 at room temperature, and also higher average ZT. This work shows that texturing is good for higher thermoelectric performance, suggesting that single crystals of n-type Mg3Sb2-based Zintl compounds are worth pursuing.

  19. Photoelectrochemical Stability and Alteration Products of n-Type Single-Crystal ZnO Photoanodes

    Directory of Open Access Journals (Sweden)

    I. E. Paulauskas

    2011-01-01

    Full Text Available The photoelectrochemical stability and surface-alteration characteristics of doped and undoped n-type ZnO single-crystal photoanode electrodes were investigated. The single-crystal ZnO photoanode properties were analyzed using current-voltage measurements plus spectral and time-dependent quantum-yield methods. These measurements revealed a distinct anodic peak and an accompanying cathodic surface degradation process at negative potentials. The features of this peak depended on time and the NaOH concentration in the electrolyte, but were independent of the presence of electrode illumination. Current measurements performed at the peak indicate that charging and discharging effects are apparently taking place at the semiconductor/electrolyte interface. This result is consistent with the significant reactive degradation that takes place on the ZnO single crystal photoanode surface and that ultimately leads to the reduction of the ZnO surface to Zn metal. The resulting Zn-metal reaction products create unusual, dendrite-like, surface alteration structural features that were analyzed using x-ray diffraction, energy-dispersive analysis, and scanning electron microscopy. ZnO doping methods were found to be effective in increasing the n-type character of the crystals. Higher doping levels result in smaller depletion widths and lower quantum yields, since the minority carrier diffusion lengths are very short in these materials.

  20. Surface photovoltage spectroscopy of real n-type GaAs(110) surfaces

    International Nuclear Information System (INIS)

    El-Dessouki, M.S.; El-Guiziri, S.B.; Gobrial, F.Z.

    1989-10-01

    N-type GaAs single crystals cut parallel to the (110) plane and doped with phosphorus by ion beam implantation were used in the present study. Temperature dependence of the bulk electrical conductivity showed two distinct activated regions with activation energies Et 1 =0.75±0.04eV, and Et 2 =0.12±0.04eV. The first activation energy is probably that of deep phosphorous impurities, while the second was related to long range disorder in the sample near room temperature. Surface photovoltage studies at room temperature were carried out at atmospheric pressure and in vacuum for etched and unetched samples. For n-type GaAs etched surface, the experimentally observed surface states were not found to change their positions by changing the pressure. But in the case of etched samples the surface states showed some redistribution under vacuum. The time constants for the initial rise and fall of CPD by illumination and after switching it off, τ 1 and τ 2 , respectively, were found to depend on the illumination intensity and photon energy. Their values range between 4 and 15 s. (author). 31 refs, 6 figs, 1 tab