Exact solution of a coupled spin–electron linear chain composed of localized Ising spins and mobile electrons

International Nuclear Information System (INIS)

Čisárová, Jana; Strečka, Jozef

2014-01-01

Exact solution of a coupled spin–electron linear chain composed of localized Ising spins and mobile electrons is found. The investigated spin–electron model is exactly solvable by the use of a transfer-matrix method after tracing out the degrees of freedom of mobile electrons delocalized over a couple of interstitial (decorating) sites. The exact ground-state phase diagram reveals an existence of five phases with different number of mobile electrons per unit cell, two of which are ferromagnetic, two are paramagnetic and one is antiferromagnetic. We have studied in particular the dependencies of compressibility and specific heat on temperature and electron density. - Highlights: • A coupled spin–electron chain composed of Ising spins and mobile electrons is exactly solved. • Quantum paramagnetic, ferromagnetic and antiferromagnetic ground states are found. • A compressibility shows a non-monotonous dependence on temperature and electron density. • Thermal dependences of specific heat display two distinct peaks

Electron attachment rate constant measurement by photoemission electron attachment ion mobility spectrometry (PE-EA-IMS)

International Nuclear Information System (INIS)

Su, Desheng; Niu, Wenqi; Liu, Sheng; Shen, Chengyin; Huang, Chaoqun; Wang, Hongmei; Jiang, Haihe; Chu, Yannan

2012-01-01

Photoemission electron attachment ion mobility spectrometry (PE-EA-IMS), with a source of photoelectrons induced by vacuum ultraviolet radiation on a metal surface, has been developed to study electron attachment reaction at atmospheric pressure using nitrogen as the buffer gas. Based on the negative ion mobility spectra, the rate constants for electron attachment to tetrachloromethane and chloroform were measured at ambient temperature as a function of the average electron energy in the range from 0.29 to 0.96 eV. The experimental results are in good agreement with the data reported in the literature. - Highlights: ► Photoemission electron attachment ion mobility spectrometry (PE-EA-IMS) was developed to study electron attachment reaction. ► The rate constants of electron attachment to CCl 4 and CHCl 3 were determined. ► The present experimental results are in good agreement with the previously reported data.

76 FR 24051 - In the Matter of Certain Electronic Devices, Including Mobile Phones, Mobile Tablets, Portable...

Science.gov (United States)

2011-04-29

..., Including Mobile Phones, Mobile Tablets, Portable Music Players, and Computers, and Components Thereof... certain electronic devices, including mobile phones, mobile tablets, portable music players, and computers...''). The complaint further alleges that an industry in the United States exists or is in the process of...

Innovative Mobile Platform Developments for Electronic Services Design and Delivery

DEFF Research Database (Denmark)

Scupola, Ada

In the ever-growing world of technology, it is becoming more important to understand the developments of new electronic services and mobile applications. Innovative Mobile Platform Developments for Electronic Services Design, and Delivery is a comprehensive look at all aspects of production manag...

SPICE compatible analytical electron mobility model for biaxial strained-Si-MOSFETs

Energy Technology Data Exchange (ETDEWEB)

Chaudhry, Amit; Sangwan, S. [UIET, Panjab University, Chandigarh (India); Roy, J. N., E-mail: amit_chaudhry01@yahoo.com [Solar Semiconductro Pvt. Ltd, Hyderabad (India)

2011-05-15

This paper describes an analytical model for bulk electron mobility in strained-Si layers as a function of strain. Phonon scattering, columbic scattering and surface roughness scattering are included to analyze the full mobility model. Analytical explicit calculations of all of the parameters to accurately estimate the electron mobility have been made. The results predict an increase in the electron mobility with the application of biaxial strain as also predicted from the basic theory of strain physics of metal oxide semiconductor (MOS) devices. The results have also been compared with numerically reported results and show good agreement. (semiconductor devices)

SPICE compatible analytical electron mobility model for biaxial strained-Si-MOSFETs

International Nuclear Information System (INIS)

Chaudhry, Amit; Sangwan, S.; Roy, J. N.

2011-01-01

This paper describes an analytical model for bulk electron mobility in strained-Si layers as a function of strain. Phonon scattering, columbic scattering and surface roughness scattering are included to analyze the full mobility model. Analytical explicit calculations of all of the parameters to accurately estimate the electron mobility have been made. The results predict an increase in the electron mobility with the application of biaxial strain as also predicted from the basic theory of strain physics of metal oxide semiconductor (MOS) devices. The results have also been compared with numerically reported results and show good agreement. (semiconductor devices)

Electronic Discharge Letter Mobile App

NARCIS (Netherlands)

Lezcano, Leonardo; Triana, Michel; Ternier, Stefaan; Hartkopf, Kathleen; Stieger, Lina; Schroeder, Hanna; Sopka, Sasa; Drachsler, Hendrik; Maher, Bridget; Henn, Patrick; Orrego, Carola; Specht, Marcus

2014-01-01

The electronic discharge letter mobile app takes advantage of Near Field Communication (NFC) within the PATIENT project and a related post-doc study. NFC enabled phones to read passive RFID tags, but can also use this short-range wireless technology to exchange (small) messages. NFC in that sense

The quasi-ballistic model of electron mobility in liquid hydrocarbons

International Nuclear Information System (INIS)

Mozumder, A.

1996-01-01

A phenomenological theory of low-mobility liquid hydrocarbons is developed which includes electron ballistic motion in the quasi-free state, in competition with diffusion and trapping. For most low-mobility liquids the theory predicts consistently the effective mobility and activation energy, in agreement with experiments, using quasi-free mobility and trap density respectively as ∼ 100 cm 2 v -1 s -1 and ∼ 10 19 cm -3 . Field dependence of mobility if theoretically of quadratic type for relatively small fields, agreeing approximately with experimental data for n-hexane. Electron scavenging with ''good'' scavengers occurs via the quasi-free state at nearly diffusion-controlled rate; however the effect of large mean free path is seen clearly. (author)

First-principles method for electron-phonon coupling and electron mobility

DEFF Research Database (Denmark)

Gunst, Tue; Markussen, Troels; Stokbro, Kurt

2016-01-01

We present density functional theory calculations of the phonon-limited mobility in n-type monolayer graphene, silicene, and MoS2. The material properties, including the electron-phonon interaction, are calculated from first principles. We provide a detailed description of the normalized full......-band relaxation time approximation for the linearized Boltzmann transport equation (BTE) that includes inelastic scattering processes. The bulk electron-phonon coupling is evaluated by a supercell method. The method employed is fully numerical and does therefore not require a semianalytic treatment of part...... of the problem and, importantly, it keeps the anisotropy information stored in the coupling as well as the band structure. In addition, we perform calculations of the low-field mobility and its dependence on carrier density and temperature to obtain a better understanding of transport in graphene, silicene...

Surface roughness induced electron mobility degradation in InAs nanowires

International Nuclear Information System (INIS)

Wang Fengyun; Yip, Sen Po; Han, Ning; Fok, KitWa; Lin, Hao; Hou, Jared J; Dong, Guofa; Hung, Tak Fu; Chan, K S; Ho, Johnny C

2013-01-01

In this work, we present a study of the surface roughness dependent electron mobility in InAs nanowires grown by the nickel-catalyzed chemical vapor deposition method. These nanowires have good crystallinity, well-controlled surface morphology without any surface coating or tapering and an excellent peak field-effect mobility up to 15 000 cm 2 V −1 s −1 when configured into back-gated field-effect nanowire transistors. Detailed electrical characterizations reveal that the electron mobility degrades monotonically with increasing surface roughness and diameter scaling, while low-temperature measurements further decouple the effects of surface/interface traps and phonon scattering, highlighting the dominant impact of surface roughness scattering on the electron mobility for miniaturized and surface disordered nanowires. All these factors suggest that careful consideration of nanowire geometries and surface condition is required for designing devices with optimal performance. (paper)

Empirical electron cross-field mobility in a Hall effect thruster

International Nuclear Information System (INIS)

Garrigues, L.; Perez-Luna, J.; Lo, J.; Hagelaar, G. J. M.; Boeuf, J. P.; Mazouffre, S.

2009-01-01

Electron transport across the magnetic field in Hall effect thrusters is still an open question. Models have so far assumed 1/B 2 or 1/B scaling laws for the 'anomalous' electron mobility, adjusted to reproduce the integrated performance parameters of the thruster. We show that models based on such mobility laws predict very different ion velocity distribution functions (IVDF) than measured by laser induced fluorescence (LIF). A fixed spatial mobility profile, obtained by analysis of improved LIF measurements, leads to much better model predictions of thruster performance and IVDF than 1/B 2 or 1/B mobility laws for discharge voltages in the 500-700 V range.

Growth parameter optimization and interface treatment for enhanced electron mobility in heavily strained GaInAs/AlInAs high electron mobility transistor structures

International Nuclear Information System (INIS)

Fedoryshyn, Yuriy; Ostinelli, Olivier; Alt, Andreas; Pallin, Angel; Bolognesi, Colombo R.

2014-01-01

The optimization of heavily strained Ga 0.25 In 0.75 As/Al 0.48 In 0.52 As high electron mobility transistor structures is discussed in detail. The growth parameters and the channel layer interfaces were optimized in order to maximize the mobility of the two-dimensional electron gas. Structures composed of an 11 nm thick channel layer and a 4 nm thick spacer layer exhibited electron mobilities as high as 15 100 cm 2 /Vs and 70 000 cm 2 /Vs at 300 and 77 K, respectively, for channels including InAs strained layers. The sheet carrier density was kept above 2.5 × 10 12  cm −2 throughout the entire study

Enhanced mobility in vertically scaled N-polar high-electron-mobility transistors using GaN/InGaN composite channels

Science.gov (United States)

Li, Haoran; Wienecke, Steven; Romanczyk, Brian; Ahmadi, Elaheh; Guidry, Matthew; Zheng, Xun; Keller, Stacia; Mishra, Umesh K.

2018-02-01

A GaN/InGaN composite channel design for vertically scaled N-polar high-electron-mobility transistor (HEMT) structures is proposed and demonstrated by metal-organic chemical vapor deposition. In a conventional N-polar HEMT structure, as the channel thickness (tch) decreases, the sheet charge density (ns) decreases, the electric field in the channel increases, and the centroid of the two-dimensional electron gas (2DEG) moves towards the back-barrier/channel interface, resulting in stronger scattering and lower electron mobility (μ). In this study, a thin InGaN layer was introduced in-between the channel and the AlGaN cap to increase the 2DEG density and reduce the electric field in the channel and therefore increase the electron mobility. The dependence of μ on the InGaN thickness (tInGaN) and the indium composition (xIn) was investigated for different channel thicknesses. With optimized tInGaN and xIn, significant improvements in electron mobility were observed. For a 6 nm channel HEMT structure, the electron mobility increased from 606 to 1141 cm2/(V.s) when the 6 nm thick pure GaN channel was replaced by the 4 nm GaN/2 nm In0.1Ga0.9N composite channel.

Electron mobility enhancement in (100) oxygen-inserted silicon channel

Energy Technology Data Exchange (ETDEWEB)

Xu, Nuo; King Liu, Tsu-Jae [Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720 (United States); Takeuchi, Hideki; Hytha, Marek; Cody, Nyles W.; Stephenson, Robert J.; Mears, Robert J. [Mears Technologies, Inc., Wellesley Hills, Massachusetts 02481 (United States); Kwak, Byungil; Cha, Seon Yong [SK Hynix, Icheon-si, Gyeonggi-do 467-701 (Korea, Republic of)

2015-09-21

High performance improvement (+88% in peak G{sub m} and >30% in linear and saturation region drain currents) was observed for N-MOSFETs with Oxygen-Inserted (OI) Si channel. From TCAD analysis of the C-V measurement data, the improvement was confirmed to be due to electron mobility enhancement of the OI Si channel (+75% at N{sub inv} = 4.0 × 10{sup 12} cm{sup −2} and +25% at N{sub inv} = 8.0 × 10{sup 12} cm{sup −2}). Raman and high-resolution Rutherford backscattering measurements confirmed that negligible strain is induced in the OI Si layer, and hence, it cannot be used to explain the origin of mobility improvement. Poisson-Schrödinger based quantum mechanical simulation was performed, taking into account phonon, surface roughness and Coulomb scatterings. The OI layer was modeled as a “quasi barrier” region with reference to the Si conduction band edge to confine inversion electrons. Simulation explains the measured electron mobility enhancement as the confinement effect of inversion electrons while the formation of an super-steep retrograde well doping profile in the channel (as a result of dopant diffusion blocking effect accompanied by introduction of the OI layer) also contributes 50%–60% of the mobility improvement.

Rational In Silico Design of an Organic Semiconductor with Improved Electron Mobility.

Science.gov (United States)

Friederich, Pascal; Gómez, Verónica; Sprau, Christian; Meded, Velimir; Strunk, Timo; Jenne, Michael; Magri, Andrea; Symalla, Franz; Colsmann, Alexander; Ruben, Mario; Wenzel, Wolfgang

2017-11-01

Organic semiconductors find a wide range of applications, such as in organic light emitting diodes, organic solar cells, and organic field effect transistors. One of their most striking disadvantages in comparison to crystalline inorganic semiconductors is their low charge-carrier mobility, which manifests itself in major device constraints such as limited photoactive layer thicknesses. Trial-and-error attempts to increase charge-carrier mobility are impeded by the complex interplay of the molecular and electronic structure of the material with its morphology. Here, the viability of a multiscale simulation approach to rationally design materials with improved electron mobility is demonstrated. Starting from one of the most widely used electron conducting materials (Alq 3 ), novel organic semiconductors with tailored electronic properties are designed for which an improvement of the electron mobility by three orders of magnitude is predicted and experimentally confirmed. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High electron mobility in Ga(In)NAs films grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Miyashita, Naoya; Ahsan, Nazmul; Monirul Islam, Muhammad; Okada, Yoshitaka; Inagaki, Makoto; Yamaguchi, Masafumi

2012-01-01

We report the highest mobility values above 2000 cm 2 /Vs in Si doped GaNAs film grown by molecular beam epitaxy. To understand the feature of the origin which limits the electron mobility in GaNAs, temperature dependences of mobility were measured for high mobility GaNAs and referential low mobility GaInNAs. Temperature dependent mobility for high mobility GaNAs is similar to the GaAs case, while that for low mobility GaInNAs shows large decrease in lower temperature region. The electron mobility of high quality GaNAs can be explained by intrinsic limiting factor of random alloy scattering and extrinsic factor of ionized impurity scattering.

Intrinsic Electron Mobility Limits in beta-Ga2O3

OpenAIRE

Ma, Nan; Tanen, Nicholas; Verma, Amit; Guo, Zhi; Luo, Tengfei; Huili; Xing; Jena, Debdeep

2016-01-01

By systematically comparing experimental and theoretical transport properties, we identify the polar optical phonon scattering as the dominant mechanism limiting electron mobility in beta-Ga2O3 to lower than 200 cm2/Vs at 300 K for donor doping densities lower than 1018 cm-3. In spite of similar electron effective mass of beta-Ga2O3 to GaN, the electron mobility is 10x lower because of a massive Frohlich interaction, due to the low phonon energies stemming from the crystal structure and stron...

The Future of the Mobile Payment as Electronic Payment System

OpenAIRE

Bezovski, Zlatko

2016-01-01

The development of the Internet and the arrival of e-commerce fostered digitalization in the payment processes by providing a variety of electronic payment options including payment cards (credit and debit), digital and mobile wallets, electronic cash, contactless payment methods etc. Mobile payment services with their increasing popularity are presently under the phase of transition, heading towards a promising future of tentative possibilities along with the innovation in technology. In thi...

Electron mobility of two-dimensional electron gas in InGaN heterostructures: Effects of alloy disorder and random dipole scatterings

Science.gov (United States)

Hoshino, Tomoki; Mori, Nobuya

2018-04-01

InGaN has a smaller electron effective mass and is expected to be used as a channel material for high-electron-mobility transistors. However, it is an alloy semiconductor with a random distribution of atoms, which introduces additional scattering mechanisms: alloy disorder and random dipole scatterings. In this work, we calculate the electron mobility in InGaN- and GaN-channel high-electron-mobility transistors (HEMTs) while taking into account acoustic deformation potential, polar optical phonon, alloy disorder, and random dipole scatterings. For InGaN-channel HEMTs, we find that not only alloy disorder but also random dipole scattering has a strong impact on the electron mobility and it significantly decreases as the In mole fraction of the channel increases. Our calculation also shows that the channel thickness w dependence of the mobility is rather weak when w > 1 nm for In0.1Ga0.9N-channel HEMTs.

78 FR 23593 - Certain Mobile Electronic Devices Incorporating Haptics; Termination of Investigation

Science.gov (United States)

2013-04-19

... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-834] Certain Mobile Electronic Devices... the importation, sale for importation, and sale within the United States after importation of certain mobile electronic devices incorporating haptics that infringe certain claims of six Immersion patents. 77...

Development of mobile electron beam plant for environmental applications

International Nuclear Information System (INIS)

Han, Bumsoo; Kim, Jinkyu; Kang, Wongu; Choi, Jang Seung; Jeong, Kwang-Young

2016-01-01

Due to the necessity of pilot scale test facility for continuous treatment of wastewater and gases on site, a mobile electron beam irradiation system mounted on a trailer has developed. This mobile electron beam irradiation system is designed for the individual field application with self-shielded structure of steel plate and lead block which will satisfy the required safety figures of International Commission on Radiological Protection (ICRP). Shielding of a mobile electron accelerator of 0.7 MeV, 30 mA has been designed and examined by Monte Carlo technique. Based on a 3-D model of electron accelerator shielding which is designed with steel and lead shield, radiation leakage was examined using the Monte Carlo N-Particle Transport (MCNP) Code. Simulations with two different versions (version 4c2 and version 5) of MCNP code showed agreements within statistical uncertainties, and the highest leakage expected is 5.5061×10 −01 (1±0.0454) μSv/h, which is far below the tolerable radiation dose limit for occupational workers. This unit could treat up to 500 m 3 of liquid waste per day at 2 kGy or 10,000 N m 3 of gases per hour at 15 kGy. - Highlights: • A mobile electron beam irradiation system mounted on a trailer has developed. • It is designed for treatment of wastewater and flue gas on site. • Shielding of 0.7 MeV, 30 mA accelerator has done by a Monte Carlo technique. • It can treat up to 500 m 3 /d of liquid waste at 2 kGy or 10,000 N m 3 /h of gas at 15 kGy.

Correlation Between Two-Dimensional Electron Gas Mobility and Crystal Quality in AlGaN/GaN High-Electron-Mobility Transistor Structure Grown on 4H-SiC.

Science.gov (United States)

Heo, Cheon; Jang, Jongjin; Lee, Kyngjae; So, Byungchan; Lee, Kyungbae; Ko, Kwangse; Nam, Okhyun

2017-01-01

We investigated the correlation between the crystal quality and two-dimensional electron gas (2DEG) mobility of an AlGaN/GaN high-electron-mobility transistor (HEMT) structure grown by metal-organic chemical vapor deposition. For the structure with an AlN nucleation layer grown at 1100 °C, the 2DEG mobility and sheet carrier density were 1627 cm²/V·s and 3.23 × 10¹³ cm⁻², respectively, at room temperature. Further, it was confirmed that the edge dislocation density of the GaN buffer layer was related to the 2DEG mobility and sheet carrier density in the AlGaN/GaN HEMT.

Mobilities of slow electrons in low- and high-pressure gases and liquids

International Nuclear Information System (INIS)

Christophorou, L.G.

1975-01-01

Mobilities of slow (thermal and epithermal) electrons in low- (less than or approximately 500 Torr) and high- (approximately 500 to approximately 34,111 Torr) pressure gases are discussed and are related to the molecular structure and to the mobilities of thermal electrons in liquid media

Fundamental limits on the electron mobility of β-Ga2O3.

Science.gov (United States)

Kang, Youngho; Krishnaswamy, Karthik; Peelaers, Hartwin; Van de Walle, Chris G

2017-06-14

We perform first-principles calculations to investigate the electronic and vibrational spectra and the electron mobility of β-Ga 2 O 3 . We calculate the electron-phonon scattering rate of the polar optical phonon modes using the Vogl model in conjunction with Fermi's golden rule; this enables us to fully take the anisotropic phonon spectra of the monoclinic lattice of β-Ga 2 O 3 into account. We also examine the scattering rate due to ionized impurities or defects using a Yukawa-potential-based model. We consider scattering due to donor impurities, as well as the possibility of compensation by acceptors such as Ga vacancies. We then calculate the room-temperature mobility of β-Ga 2 O 3 using the Boltzmann transport equation within the relaxation time approximation, for carrier densities in the range from 10 17 to 10 20 cm -3 . We find that the electron-phonon interaction dominates the mobility for carrier densities of up to 10 19 cm -3 . We also find that the intrinsic anisotropy in the mobility is small; experimental findings of large anisotropy must therefore be attributed to other factors. We attribute the experimentally observed reduction of the mobility with increasing carrier density to increasing levels of compensation, which significantly affect the mobility.

Fundamental limits on the electron mobility of β-Ga2O3

Science.gov (United States)

Kang, Youngho; Krishnaswamy, Karthik; Peelaers, Hartwin; Van de Walle, Chris G.

2017-06-01

We perform first-principles calculations to investigate the electronic and vibrational spectra and the electron mobility of β-Ga2O3. We calculate the electron-phonon scattering rate of the polar optical phonon modes using the Vogl model in conjunction with Fermi’s golden rule; this enables us to fully take the anisotropic phonon spectra of the monoclinic lattice of β-Ga2O3 into account. We also examine the scattering rate due to ionized impurities or defects using a Yukawa-potential-based model. We consider scattering due to donor impurities, as well as the possibility of compensation by acceptors such as Ga vacancies. We then calculate the room-temperature mobility of β-Ga2O3 using the Boltzmann transport equation within the relaxation time approximation, for carrier densities in the range from 1017 to 1020 cm-3. We find that the electron-phonon interaction dominates the mobility for carrier densities of up to 1019 cm-3. We also find that the intrinsic anisotropy in the mobility is small; experimental findings of large anisotropy must therefore be attributed to other factors. We attribute the experimentally observed reduction of the mobility with increasing carrier density to increasing levels of compensation, which significantly affect the mobility.

Electron drift time in silicon drift detectors: A technique for high precision measurement of electron drift mobility

International Nuclear Information System (INIS)

Castoldi, A.; Rehak, P.

1995-01-01

This paper presents a precise absolute measurement of the drift velocity and mobility of electrons in high resistivity silicon at room temperature. The electron velocity is obtained from the differential measurement of the drift time of an electron cloud in a silicon drift detector. The main features of the transport scheme of this class of detectors are: the high uniformity of the electron motion, the transport of the signal electrons entirely contained in the high-purity bulk, the low noise timing due to the very small anode capacitance (typical value 100 fF), and the possibility to measure different drift distances, up to the wafer diameter, in the same semiconductor sample. These features make the silicon drift detector an optimal device for high precision measurements of carrier drift properties. The electron drift velocity and mobility in a 10 kΩ cm NTD n-type silicon wafer have been measured as a function of the electric field in the range of possible operation of a typical drift detector (167--633 V/cm). The electron ohmic mobility is found to be 1394 cm 2 /V s. The measurement precision is better than 1%. copyright 1995 American Institute of Physics

Mobile interstitial model and mobile electron model of mechano-induced luminescence in coloured alkali halide crystals

International Nuclear Information System (INIS)

Chandra, B.P.; Singh, Seema; Ojha, Bharti; Shrivastava, R.G.

1996-01-01

A theoretical study is made on the mobile interstitial and mobile electron models of mechano-induced luminescence in coloured alkali halide crystals. Equations derived indicate that the mechanoluminescence intensity should depend on several factors like strain rate, applied stress, temperature, density of F-centres and volume of crystal. The equations also involve the efficiency and decay time of mechanoluminescence. Results of mobile interstitial and mobile electron models are compared with the experimental observations, which indicated that the latter is more suitable as compared to the former. From the temperature dependence of ML, the energy gaps between the dislocation band and ground state of F-centre is calculated which are 0.08, 0.072 and 0.09 eV for KCl, KBr and NaCl crystals, respectively. The theory predicts that the decay of ML intensity is related to the process of stress relaxation in crystals. (author). 33 refs., 5 figs., 1 tab

Excess electron mobility in ethane. Density, temperature, and electric field effects

International Nuclear Information System (INIS)

Doeldissen, W.; Schmidt, W.F.; Bakale, G.

1980-01-01

The excess electron mobility in liquid ethane was measured under orthobaric conditions as a function of temperature and electric field strength up to the critical temperature at 305.33 K. The low field mobility was found to rise strongly with temperature and exhibits a maximum value of 44 cm 2 V -1 s -1 at 2 0 below the critical temperature. At temperatures above 260 K the electron drift velocity shows a sublinear field dependence at high values of the electric field strength. These observations lead to the supposition that in liquid ethane a transition from transport via localized states to transport in extended states occurs. Measurements were also performed in fluid ethane at densities from 2.4 to 12.45 mol L -1 and temperatures from 290 to 340 K. On isochores in the vicinity of the critical density, an increase of the low field mobility with temperature was observed. This effect was found to disappear both at low (rho = 2.4 mol L -1 ) and high densities (rho greater than or equal to 9.2 mol L -1 ). In this density range, a sublinear field dependence of the drift velocities at high field strengths was noted. The critical velocity associated with the appearance of hot electrons was observed to decrease with higher densities indicating a smaller fractional energy transfer in electron molecule collisions. A compilation of electron mobilities in gaseous and liquid ethane shows that, up to densitiesof rho = 9.5 mol L -1 , μ proportional to n -1 is fulfilled if temperature effects are ignored. At intermediate densities, 9 mol L -1 -1 , a density dependence of μ proportional to rho -5 is found followed by a stronger mobility decrease toward the triple point. Positive ion mobilities measured under orthobaric conditions followed Walden's rule

Lead Halide Perovskites as Charge Generation Layers for Electron Mobility Measurement in Organic Semiconductors.

Science.gov (United States)

Love, John A; Feuerstein, Markus; Wolff, Christian M; Facchetti, Antonio; Neher, Dieter

2017-12-06

Hybrid lead halide perovskites are introduced as charge generation layers (CGLs) for the accurate determination of electron mobilities in thin organic semiconductors. Such hybrid perovskites have become a widely studied photovoltaic material in their own right, for their high efficiencies, ease of processing from solution, strong absorption, and efficient photogeneration of charge. Time-of-flight (ToF) measurements on bilayer samples consisting of the perovskite CGL and an organic semiconductor layer of different thickness are shown to be determined by the carrier motion through the organic material, consistent with the much higher charge carrier mobility in the perovskite. Together with the efficient photon-to-electron conversion in the perovskite, this high mobility imbalance enables electron-only mobility measurement on relatively thin application-relevant organic films, which would not be possible with traditional ToF measurements. This architecture enables electron-selective mobility measurements in single components as well as bulk-heterojunction films as demonstrated in the prototypical polymer/fullerene blends. To further demonstrate the potential of this approach, electron mobilities were measured as a function of electric field and temperature in an only 127 nm thick layer of a prototypical electron-transporting perylene diimide-based polymer, and found to be consistent with an exponential trap distribution of ca. 60 meV. Our study furthermore highlights the importance of high mobility charge transporting layers when designing perovskite solar cells.

Electron-capture process and ion mobility spectra in plasma chromatography

International Nuclear Information System (INIS)

Karasek, F.W.; Spangler, G.E.

1981-01-01

The basic principles of plasma chromatography are introduced and ion mobility relationships presented. The relationships of plasma chromatography to electron-capture detector mechanisms are discussed, including electron energy considerations and electron-capture reactions. A number of experimental studies by plasma chromatography are described. (C.F.)

78 FR 34132 - Certain Portable Electronic Communications Devices, Including Mobile Phones and Components...

Science.gov (United States)

2013-06-06

... INTERNATIONAL TRADE COMMISSION [Docket No 2958] Certain Portable Electronic Communications Devices, Including Mobile Phones and Components Thereof; Correction to Notice of Receipt of Complaint; Solicitation... of complaint entitled Certain Portable Electronic Communications Devices, Including Mobile Phones and...

77 FR 15390 - Certain Mobile Electronic Devices Incorporating Haptics; Receipt of Amended Complaint...

Science.gov (United States)

2012-03-15

... INTERNATIONAL TRADE COMMISSION [DN 2875] Certain Mobile Electronic Devices Incorporating Haptics.... International Trade Commission. ACTION: Notice. SUMMARY: Notice is hereby given that the U.S. International Trade Commission has received an amended complaint entitled Certain Mobile Electronic Devices...

77 FR 18860 - Certain Consumer Electronics, Including Mobile Phones and Tablets; Notice of Receipt of Complaint...

Science.gov (United States)

2012-03-28

... INTERNATIONAL TRADE COMMISSION [DN 2885] Certain Consumer Electronics, Including Mobile Phones and.... International Trade Commission has received a complaint entitled Certain Consumer Electronics, Including Mobile... electronics, including mobile phones and tablets. The complaint names as respondents ASUSTeK Computer, Inc. of...

Charge carrier mobility and electronic properties of Al(Op3: impact of excimer formation

Directory of Open Access Journals (Sweden)

Andrea Magri

2015-05-01

Full Text Available We have studied the electronic properties and the charge carrier mobility of the organic semiconductor tris(1-oxo-1H-phenalen-9-olatealuminium(III (Al(Op3 both experimentally and theoretically. We experimentally estimated the HOMO and LUMO energy levels to be −5.93 and −3.26 eV, respectively, which were close to the corresponding calculated values. Al(Op3 was successfully evaporated onto quartz substrates and was clearly identified in the absorption spectra of both the solution and the thin film. A structured steady state fluorescence emission was detected in solution, whereas a broad, red-shifted emission was observed in the thin film. This indicates the formation of excimers in the solid state, which is crucial for the transport properties. The incorporation of Al(Op3 into organic thin film transistors (TFTs was performed in order to measure the charge carrier mobility. The experimental setup detected no electron mobility, while a hole mobility between 0.6 × 10−6 and 2.1 × 10−6 cm2·V−1·s−1 was measured. Theoretical simulations, on the other hand, predicted an electron mobility of 9.5 × 10−6 cm2·V−1·s−1 and a hole mobility of 1.4 × 10−4 cm2·V−1·s−1. The theoretical simulation for the hole mobility predicted an approximately one order of magnitude higher hole mobility than was observed in the experiment, which is considered to be in good agreement. The result for the electron mobility was, on the other hand, unexpected, as both the calculated electron mobility and chemical common sense (based on the capability of extended aromatic structures to efficiently accept and delocalize additional electrons suggest more robust electron charge transport properties. This discrepancy is explained by the excimer formation, whose inclusion in the multiscale simulation workflow is expected to bring the theoretical simulation and experiment into agreement.

Electron mobility in few-layer MoxW1-xS2

International Nuclear Information System (INIS)

Chandrasekar, Hareesh; Nath, Digbijoy N

2015-01-01

Heterostructures of two-dimensional (2D) layered materials are increasingly being explored for electronics in order to potentially extend conventional transistor scaling and to exploit new device designs and architectures. Alloys form a key underpinning of any heterostructure device technology and therefore an understanding of their electronic properties is essential. In this paper, we study the intrinsic electron mobility in few-layer Mo x W 1−x S 2 as limited by various scattering mechanisms. The room temperature, energy-dependent scattering times corresponding to polar longitudinal optical (LO) phonon, alloy and background impurity scattering mechanisms are estimated based on the Born approximation to Fermi’s golden rule. The contribution of individual scattering rates is analyzed as a function of 2D electron density as well as of alloy composition in Mo x W 1−x S 2 . While impurity scattering limits the mobility for low carrier densities (<2–4×10 12 cm −2 ), LO polar phonon scattering is the dominant mechanism for high electron densities. Alloy scattering is found to play a non-negligible role for 0.5 < x < 0.7 in Mo x W 1−x S 2 . The LO phonon-limited and impurity-limited mobilities show opposing trends with respect to alloy mole fractions. The understanding of electron mobility in Mo x W 1−x S 2 presented here is expected to enable the design and realization of heterostructures and devices based on alloys of MoS 2 and WS 2 . (paper)

Patterning of high mobility electron gases at complex oxide interfaces

DEFF Research Database (Denmark)

Trier, Felix; Prawiroatmodjo, G. E. D. K.; von Soosten, Merlin

2015-01-01

Oxide interfaces provide an opportunity for electronics. However, patterning of electron gases at complex oxide interfaces is challenging. In particular, patterning of complex oxides while preserving a high electron mobility remains underexplored and inhibits the study of quantum mechanical effects...... of amorphous-LSM (a-LSM) thin films, which acts as a hard mask during subsequent depositions. Strikingly, the patterned modulation-doped interface shows electron mobilities up to ∼8 700 cm2/V s at 2 K, which is among the highest reported values for patterned conducting complex oxide interfaces that usually...... where extended electron mean free paths are paramount. This letter presents an effective patterning strategy of both the amorphous-LaAlO3/SrTiO3 (a-LAO/STO) and modulation-doped amorphous-LaAlO3/La7/8Sr1/8MnO3/SrTiO3 (a-LAO/LSM/STO) oxide interfaces. Our patterning is based on selective wet etching...

A Survey on the Reliability of Power Electronics in Electro-Mobility Applications

DEFF Research Database (Denmark)

Gadalla, Brwene Salah Abdelkarim; Schaltz, Erik; Blaabjerg, Frede

2015-01-01

Reliability is an important issue in the field of power electronics since most of the electrical energy is today processed by power electronics. In most of the electro-mobility applications, e.g. electric and hybridelectric vehicles, power electronic are commonly used in very harsh environment...... and extending the service lifetime as well. Research within power electronics is of high interest as it has an important impact in the industry of the electro-mobility applications. According to the aforementioned explanations, this paper will provide an overview of the common factors (thermal cycles, power...... cycles, vibrations, voltage stress and current ripple stress) affecting the reliability of power electronics in electromobility applications. Also, the researchers perspective is summarized from 2001 to 2015....

Microscopic origin of the mobility enhancement at a spinel/perovskite oxide heterointerface revealed by photoemission spectroscopy

DEFF Research Database (Denmark)

Schuetz, P.; Christensen, Dennis Valbjørn; Borisov, V.

2017-01-01

The spinel/perovskite heterointerface γ−Al2O3/SrTiO3 hosts a two-dimensional electron system (2DES) with electron mobilities exceeding those in its all-perovskite counterpart LaAlO3/SrTiO3 by more than an order of magnitude, despite the abundance of oxygen vacancies which act as electron donors a...

75 FR 32984 - Policy on the Retention of Supporting Documents and the Use of Electronic Mobile Communication...

Science.gov (United States)

2010-06-10

...-0168] Policy on the Retention of Supporting Documents and the Use of Electronic Mobile Communication... changes regarding the retention of supporting documents and the use of electronic mobile communication... electronic mobile communication/tracking records to be supporting documents, as they record the time, date...

Accounting of inter-electron correlations in the model of mobile electron shells

International Nuclear Information System (INIS)

Panov, Yu.D.; Moskvin, A.S.

2000-01-01

One studied the basic peculiar features of the model for mobile electron shells for multielectron atom or cluster. One offered a variation technique to take account of the electron correlations where the coordinates of the centre of single-particle atomic orbital served as variation parameters. It enables to interpret dramatically variation of electron density distribution under anisotropic external effect in terms of the limited initial basis. One studied specific correlated states that might make correlation contribution into the orbital current. Paper presents generalization of the typical MO-LCAO pattern with the limited set of single particle functions enabling to take account of additional multipole-multipole interactions in the cluster [ru

Electron mobilities of n-type organic semiconductors from time-dependent wavepacket diffusion method: pentacenequinone derivatives.

Science.gov (United States)

Zhang, WeiWei; Zhong, XinXin; Zhao, Yi

2012-11-26

The electron mobilities of two n-type pentacenequinone derivative organic semiconductors, 5,7,12,14-tetraaza-6,13-pentacenequinone (TAPQ5) and 1,4,8,11-tetraaza-6,13-pentacenequinone (TAPQ7), are investigated with use of the methods of electronic structure and quantum dynamics. The electronic structure calculations reveal that the two key parameters for the control of electron transfer, reorganization energy and electronic coupling, are similar for these two isomerization systems, and the charge carriers essentially display one-dimensional transport properties. The mobilities are then calculated by using the time-dependent wavepacket diffusion approach in which the dynamic fluctuations of the electronic couplings are incorporated via their correlation functions obtained from molecular dynamics simulations. The predicted mobility of TAPQ7 crystal is about six times larger than that of TAPQ5 crystal. Most interestingly, Fermi's golden rule predicts the mobilities very close to those from the time-dependent wavepacket diffusion method, even though the electronic couplings are explicitly large enough to make the perturbation theory invalid. The possible reason is analyzed from the dynamic fluctuations.

Electron and hole drift mobility measurements on methylammonium lead iodide perovskite solar cells

Energy Technology Data Exchange (ETDEWEB)

Maynard, Brian; Long, Qi; Schiff, Eric A. [Department of Physics, Syracuse University, Syracuse, New York 13244 (United States); Yang, Mengjin; Zhu, Kai [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Kottokkaran, Ranjith; Abbas, Hisham; Dalal, Vikram L. [Iowa State University, Ames, Iowa 50011 (United States)

2016-04-25

We report nanosecond domain time-of-flight measurements of electron and hole photocarriers in methylammonium lead iodide perovskite solar cells. The mobilities ranged from 0.06 to 1.4 cm{sup 2}/Vs at room temperature, but there is little systematic difference between the two carriers. We also find that the drift mobilities are dispersive (time-dependent). The dispersion parameters are in the range of 0.4–0.7, and they imply that terahertz domain mobilities will be much larger than nanosecond domain mobilities. The temperature-dependences of the dispersion parameters are consistent with confinement of electron and hole transport to fractal-like spatial networks within nanoseconds of their photogeneration.

Theoretical interpretation of the electron mobility behavior in InAs nanowires

International Nuclear Information System (INIS)

Marin, E. G.; Ruiz, F. G.; Godoy, A.; Tienda-Luna, I. M.; Martínez-Blanque, C.; Gámiz, F.

2014-01-01

This work studies the electron mobility in InAs nanowires (NWs), by solving the Boltzmann Transport Equation under the Momentum Relaxation Time approximation. The numerical solver takes into account the contribution of the main scattering mechanisms present in III-V compound semiconductors. It is validated against experimental field effect-mobility results, showing a very good agreement. The mobility dependence on the nanowire diameter and carrier density is analyzed. It is found that surface roughness and polar optical phonons are the scattering mechanisms that mainly limit the mobility behavior. Finally, we explain the origin of the oscillations observed in the mobility of small NWs at high electric fields.

Theoretical interpretation of the electron mobility behavior in InAs nanowires

Energy Technology Data Exchange (ETDEWEB)

Marin, E. G., E-mail: egmarin@ugr.es; Ruiz, F. G., E-mail: franruiz@ugr.es; Godoy, A.; Tienda-Luna, I. M.; Martínez-Blanque, C.; Gámiz, F. [Departamento de Electrónica y Tecnología de los Computadores, Facultad de Ciencias, Universidad de Granada, Av. Fuentenueva S/N, 18071 Granada (Spain)

2014-11-07

This work studies the electron mobility in InAs nanowires (NWs), by solving the Boltzmann Transport Equation under the Momentum Relaxation Time approximation. The numerical solver takes into account the contribution of the main scattering mechanisms present in III-V compound semiconductors. It is validated against experimental field effect-mobility results, showing a very good agreement. The mobility dependence on the nanowire diameter and carrier density is analyzed. It is found that surface roughness and polar optical phonons are the scattering mechanisms that mainly limit the mobility behavior. Finally, we explain the origin of the oscillations observed in the mobility of small NWs at high electric fields.

Electron mobility in monoclinic β-Ga2O3—Effect of plasmon-phonon coupling, anisotropy, and confinement

Science.gov (United States)

Ghosh, Krishnendu; Singisetti, Uttam

2017-11-01

This work reports an investigation of electron transport in monoclinic \\beta-Ga2O3 based on a combination of density functional perturbation theory based lattice dynamical computations, coupling calculation of lattice modes with collective plasmon oscillations and Boltzmann theory based transport calculations. The strong entanglement of the plasmon with the different longitudinal optical (LO) modes make the role LO-plasmon coupling crucial for transport. The electron density dependence of the electron mobility in \\beta-Ga2O3 is studied in bulk material form and also in the form of two-dimensional electron gas. Under high electron density a bulk mobility of 182 cm2/ V.s is predicted while in 2DEG form the corresponding mobility is about 418 cm2/V.s when remote impurities are present at the interface and improves further as the remote impurity center moves away from the interface. The trend of the electron mobility shows promise for realizing high electron mobility in dopant isolated electron channels. The experimentally observed small anisotropy in mobility is traced through a transient Monte Carlo simulation. It is found that the anisotropy of the IR active phonon modes is responsible for giving rise to the anisotropy in low-field electron mobility.

Temperature dependence of ballistic mobility in a metamorphic InGaAs/InAlAs high electron mobility transistor

International Nuclear Information System (INIS)

Lee, Jongkyong; Gang, Suhyun; Jo, Yongcheol; Kim, Jongmin; Woo, Hyeonseok; Han, Jaeseok; Kim, Hyungsang; Im, Hyunsik

2014-01-01

We have investigated the temperature dependence of ballistic mobility in a 100 nm-long InGaAs/InAlAs metamorphic high-electron-mobility transistor designed for millimeter-wavelength RF applications. To extract the temperature dependence of quasi-ballistic mobility, our experiment involves measurements of the effective mobility in the low-bias linear region of the transistor and of the collision-dominated Hall mobility using a gated Hall bar of the same epitaxial structure. The data measured from the experiment are consistent with that of modeled ballistic mobility based on ballistic transport theory. These results advance the understanding of ballistic transport in various transistors with a nano-scale channel length that is comparable to the carrier's mean free path in the channel.

Electron mobility limited by optical phonons in wurtzite InGaN/GaN core-shell nanowires

Science.gov (United States)

Liu, W. H.; Qu, Y.; Ban, S. L.

2017-09-01

Based on the force-balance and energy-balance equations, the optical phonon-limited electron mobility in InxGa1-xN/GaN core-shell nanowires (CSNWs) is discussed. It is found that the electrons tend to distribute in the core of the CSNWs due to the strong quantum confinement. Thus, the scattering from first kind of the quasi-confined optical (CO) phonons is more important than that from the interface (IF) and propagating (PR) optical phonons. Ternary mixed crystal and size effects on the electron mobility are also investigated. The results show that the PR phonons exist while the IF phonons disappear when the indium composition x < 0.047, and vice versa. Accordingly, the total electron mobility μ first increases and then decreases with indium composition x, and reaches a peak value of approximately 3700 cm2/(V.s) when x = 0.047. The results also show that the mobility μ increases as increasing the core radius of CSNWs due to the weakened interaction between the electrons and CO phonons. The total electron mobility limited by the optical phonons exhibits an obvious enhancement as decreasing temperature or increasing line electron density. Our theoretical results are expected to be helpful to develop electronic devices based on CSNWs.

77 FR 27078 - Certain Electronic Devices, Including Mobile Phones and Tablet Computers, and Components Thereof...

Science.gov (United States)

2012-05-08

... Phones and Tablet Computers, and Components Thereof; Notice of Receipt of Complaint; Solicitation of... entitled Certain Electronic Devices, Including Mobile Phones and Tablet Computers, and Components Thereof... the United States after importation of certain electronic devices, including mobile phones and tablet...

High Thermoelectric Power Factor of High-Mobility 2D Electron Gas.

Science.gov (United States)

Ohta, Hiromichi; Kim, Sung Wng; Kaneki, Shota; Yamamoto, Atsushi; Hashizume, Tamotsu

2018-01-01

Thermoelectric conversion is an energy harvesting technology that directly converts waste heat from various sources into electricity by the Seebeck effect of thermoelectric materials with a large thermopower ( S ), high electrical conductivity (σ), and low thermal conductivity (κ). State-of-the-art nanostructuring techniques that significantly reduce κ have realized high-performance thermoelectric materials with a figure of merit ( ZT = S 2 ∙σ∙ T ∙κ -1 ) between 1.5 and 2. Although the power factor (PF = S 2 ∙σ) must also be enhanced to further improve ZT , the maximum PF remains near 1.5-4 mW m -1 K -2 due to the well-known trade-off relationship between S and σ. At a maximized PF, σ is much lower than the ideal value since impurity doping suppresses the carrier mobility. A metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) structure on an AlGaN/GaN heterostructure is prepared. Applying a gate electric field to the MOS-HEMT simultaneously modulates S and σ of the high-mobility electron gas from -490 µV K -1 and ≈10 -1 S cm -1 to -90 µV K -1 and ≈10 4 S cm -1 , while maintaining a high carrier mobility (≈1500 cm 2 V -1 s -1 ). The maximized PF of the high-mobility electron gas is ≈9 mW m -1 K -2 , which is a two- to sixfold increase compared to state-of-the-art practical thermoelectric materials.

Ultimate response time of high electron mobility transistors

International Nuclear Information System (INIS)

Rudin, Sergey; Rupper, Greg; Shur, Michael

2015-01-01

We present theoretical studies of the response time of the two-dimensional gated electron gas to femtosecond pulses. Our hydrodynamic simulations show that the device response to a short pulse or a step-function signal is either smooth or oscillating time-decay at low and high mobility, μ, values, respectively. At small gate voltage swings, U 0  = U g  − U th , where U g is the gate voltage and U th is the threshold voltage, such that μU 0 /L < v s , where L is the channel length and v s is the effective electron saturation velocity, the decay time in the low mobility samples is on the order of L 2 /(μU 0 ), in agreement with the analytical drift model. However, the decay is preceded by a delay time on the order of L/s, where s is the plasma wave velocity. This delay is the ballistic transport signature in collision-dominated devices, which becomes important during very short time periods. In the high mobility devices, the period of the decaying oscillations is on the order of the plasma wave velocity transit time. Our analysis shows that short channel field effect transistors operating in the plasmonic regime can meet the requirements for applications as terahertz detectors, mixers, delay lines, and phase shifters in ultra high-speed wireless communication circuits

Electron mobility in nonpolar liquids: the effect of molecular structure, temperature and electric field

International Nuclear Information System (INIS)

Schmidt, W.F.

1977-01-01

A survey is given on the mobility of excess electrons in liquid hydrocarbons and related compounds. It was found that the mobility is strongly influenced by the molecular structure of the liquid, by the temperature, and by the electric field strength. The mobility in hydrocarbons increases as the shape of the molecule approaches a sphere. The temperature coefficient is positive in most liquids over a limited temperature although exceptions have been observed in liquid methane. The field dependence of the mobility in high mobility liquids (>10 cm 2 V -1 s -1 ) showed a decrease of the mobility at higher field strengths while in low mobility liquids ( 2 V -1 s -1 ) it showed an increase. These results are discussed on the basis of the extended and the localized electron models. The predictions of these theories are compared with the experimental results and conclusions on the validity of the underlying assumptions are drawn. (author)

Thermal Investigation of Three-Dimensional GaN-on-SiC High Electron Mobility Transistors

Science.gov (United States)

2017-07-01

University of L’Aquila, (2011). 23 Rao, H. & Bosman, G. Hot-electron induced defect generation in AlGaN/GaN high electron mobility transistors. Solid...AFRL-RY-WP-TR-2017-0143 THERMAL INVESTIGATION OF THREE- DIMENSIONAL GaN-on-SiC HIGH ELECTRON MOBILITY TRANSISTORS Qing Hao The University of Arizona...clarification memorandum dated 16 Jan 09. This report is available to the general public, including foreign nationals. Copies may be obtained from the

The electron mobility and thermoelectric power in InSb at atmospheric and hydrostatic pressures

International Nuclear Information System (INIS)

Litwin-Staszewska, E.; Piotrzkowski, R.; Szymanska, W.

1981-01-01

First, theoretical calculations of electron mobility and thermoelectric power in n-type InSb are reported at liquid nitrogen and room temperatures. All the scattering mechanisms of importance in InSb are taken into account. The calculations based upon a variational solution of the Boltzmann equation are compared with experimental results over the whole available range of electron concentrations. Good agreement between theoretical and experimental results is obtained using the value of deformation potential constant C = 14.6 eV. Secondly, both, experimental and theoretical investigations are made of mobility in InSb under hydrostatic pressure at 77 K within a wide range of electron concentrations. The smallest electron concentrations obtained by freezing the conduction electrons on the metastable states are of order of 1x10 12 cm -3 . Also for those smallest concentration it is possible to describe theoretically the dependence of mobility on the hydrostatic pressure using the same set of parameters as previously, and assuming some compensation of donors by acceptors. (author)

Temperature dependence of electron mobility, electroluminescence and photoluminescence of Alq{sub 3} in OLED

Energy Technology Data Exchange (ETDEWEB)

Mu Haichuan; White, Dan; Sharpton, Buck [Office of Electronic Miniaturization, University of Alaska at Fairbanks, AK 99701 (United States); Klotzkin, David [Department of Electrical and Computer Engineering and Computer Sciences, University of Cincinnati, Cincinnati, OH 45221 (United States); De Silva, Ajith; Wagner, Hans Peter [Department of Physics, University of Cincinnati, Cincinnati, OH 45221 (United States)], E-mail: fnhm@uaf.edu

2008-12-07

The correlation of electroluminescence (EL), photoluminescence (PL) and electron mobility were investigated over temperature from 60 to 300 K in small-molecule organic light emitting diode (OLED) structures. The devices consisted of ITO/PEDOT(50 nm)/TPD(50 nm)/Alq{sub 3}(60 nm)/LiF(1 nm)/Al(90 nm), and were fabricated with high-vacuum sublimation/evaporation in a cross-linked configuration. Electron mobility was measured using an ac analysis of the device optical modulation characteristics, while PL and EL were measured by measuring optical power out at fixed pump power of 1 mW, and analysis of dc brightness-voltage (L-V) characteristics, respectively. PL intensity and mobility had a clear maximum at around 220 K, while EL efficiency was constant below 220 K and decrease monotonically above. The reason for the temperature dependent EL, PL and electron mobility behaviour will be discussed.

Effect of the hydrostatic pressure on the electron mobility in delta-doped systems

Energy Technology Data Exchange (ETDEWEB)

Oubram, O; Mora-Ramos, M E; Gaggero-Sager, L M, E-mail: 1gaggero@uaem.m [Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Av. Universidad 1001, CP 62209, Cuernavaca, Morelos (Mexico)

2009-05-01

The influence of hydrostatic pressure on the electron states and low-temperature mobility in n-type GaAs delta-doped single quantum wells is studied. Values of hydrostatic pressure consider are below the so-called GAMMA-X crossover, keeping all attention in the electronic properties at the Brillouin zone center. The effect of the pressure on the electron mobility is described via a relative quantity that is proportional to the ratio between P not = 0 and zero pressure results. Calculation is performed using an analytical description of the potential energy function profile, based on the Thomas-Fermi approach, taking explicitly into account the dependence upon P of the main input parameters: effective masses and dielectric constant. The relative mobility increases for higher values of P. The cases of zero and finite -although small- temperature are studied, showing that the influence of T is mainly to lower the values of the relative mobility in the entire range of P considered. Numerical results are reported for a two-dimensional density of ionized impurities equals to 7.5 x 10{sup 12} cm{sup -2}.

A Prototype User Interface for a Mobile Electronic Clinical Note Data Entry System

OpenAIRE

Zafar, Atif; Lehto, Mark; Kim, Jongseo

2005-01-01

Recent advances in mobile computing technologies have made electronic medical records (EMRs) on handheld devices an attractive possibility. However, data entry paradigms popular on desktop machines do not translate well to mobile devices1,2. Based on a review of the literature on mobile device usability1–4, we built a prototype user interface for mobile EMRs and held focus groups with clinician users whose feedback provided useful insight about design choices, functionality and...

Development of mobile platform integrated with existing electronic medical records.

Science.gov (United States)

Kim, YoungAh; Kim, Sung Soo; Kang, Simon; Kim, Kyungduk; Kim, Jun

2014-07-01

This paper describes a mobile Electronic Medical Record (EMR) platform designed to manage and utilize the existing EMR and mobile application with optimized resources. We structured the mEMR to reuse services of retrieval and storage in mobile app environments that have already proven to have no problem working with EMRs. A new mobile architecture-based mobile solution was developed in four steps: the construction of a server and its architecture; screen layout and storyboard making; screen user interface design and development; and a pilot test and step-by-step deployment. This mobile architecture consists of two parts, the server-side area and the client-side area. In the server-side area, it performs the roles of service management for EMR and documents and for information exchange. Furthermore, it performs menu allocation depending on user permission and automatic clinical document architecture document conversion. Currently, Severance Hospital operates an iOS-compatible mobile solution based on this mobile architecture and provides stable service without additional resources, dealing with dynamic changes of EMR templates. The proposed mobile solution should go hand in hand with the existing EMR system, and it can be a cost-effective solution if a quality EMR system is operated steadily with this solution. Thus, we expect this example to be shared with hospitals that currently plan to deploy mobile solutions.

The unexpected beneficial effect of the L-valley population on the electron mobility of GaAs nanowires

International Nuclear Information System (INIS)

Marin, E. G.; Ruiz, F. G.; Godoy, A.; Tienda-Luna, I. M.; Gámiz, F.

2015-01-01

The impact of the L-valley population on the transport properties of GaAs cylindrical nanowires (NWs) is analyzed by numerically calculating the electron mobility under the momentum relaxation time approximation. In spite of its low contribution to the electron mobility (even for high electron populations in small NWs), it is demonstrated to have a beneficial effect, since it significantly favours the Γ-valley mobility by screening the higher Γ-valley energy subbands

Electric field dependence of the electron mobility in bulk wurtzite ZnO

Indian Academy of Sciences (India)

Electric field dependence of the electron mobility in bulk wurtzite ZnO. K ALFARAMAWI ... tion to ultraviolet light emitters, gas sensors, surface acoustic wave devices and ..... Dorkel J M and Leturcq P H 1981 Solid-State Electron. 24 8211.

Calculation of the mobility of electrons injected in liquid argon

International Nuclear Information System (INIS)

Ascarelli, G.

1986-01-01

A model calculation is carried out in which we evaluate the mobility of electrons injected in liquid argon. Scattering by both phonons and static density fluctuations is taken into account. The calculation for the mobility limited by phonon scattering differs from the usual calculation in crystals by considering both the local changes in the deformation potential and the changes of the amplitude of the phonons that are caused by the existence of density fluctuations. The calculation of the mobility limited by scattering from density fluctuations is carried out with the assumption that they give rise to a square-well (or barrier) potential that will scatter the electrons. The above perturbation ΔV 0 is related to a density fluctuation Δn by ΔV 0 = V 0 (n-bar+Δn)-V 0 (n-bar). The scattering volumes Ω, where the density fluctuation Δn is located, are weighted by exp(-r/xi) where xi is the correlation length and r is the radius of Ω. The magnitude of the different density fluctuations is weighted by exp[-(Δn) 2 Ω/2nS(0)], where S(0) = nk/sub B/TK/sub T/, K/sub T/ is the isothermal compressibility. The calculation of the mean free path is carried out using partial waves. Both scattering mechanisms, scattering by phonons and static density fluctuations, give comparable contributions to the mobility

77 FR 49458 - Certain Mobile Electronic Devices Incorporating Haptics; Amendment of the Complaint and Notice of...

Science.gov (United States)

2012-08-16

... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-834] Certain Mobile Electronic Devices.... 1337 in the importation, sale for importation, and sale within the United States after importation of certain mobile electronic devices incorporating haptics, by reason of the infringement of claims of six...

Exploring the Use of Electronic Mobile Technologies among Distance Learners in Rural Communities for Safe and Disruptive Learning

Science.gov (United States)

Ntloedibe-Kuswani, Gomang Seratwa

2013-01-01

Several studies indicated the potential of electronic mobile technologies in reaching (safe learning) under-served communities and engaging (disruptive learning) disadvantaged peoples affording them learning experiences. However, the potential benefits of (electronic mobile learning) e-mobile learning have not been well understood from the…

Effectiveness of mobile electronic devices in weight loss among overweight and obese populations: a systematic review and meta-analysis.

Science.gov (United States)

Khokhar, Bushra; Jones, Jessica; Ronksley, Paul E; Armstrong, Marni J; Caird, Jeff; Rabi, Doreen

2014-01-01

Mobile electronic devices, such as mobile phones and PDAs, have emerged as potentially useful tools in the facilitation and maintenance of weight loss. While RCTs have demonstrated a positive impact of mobile interventions, the extent to which mobile electronic devices are more effective than usual care methods is still being debated. Electronic databases were systematically searched for RCTs evaluating the effectiveness of mobile electronic device interventions among overweight and obese adults. Weighted mean difference for change in body weight was the primary outcome. The search strategy yielded 559 citations and of the 108 potentially relevant studies, six met the criteria. A total of 632 participants were included in the six studies reporting a mean change in body weight. Using a random-effects model, the WMD for the effect of using mobile electronic devices on reduction in body weight was -1.09 kg (95% CI -2.12, -0.05). When stratified by the type of mobile electronic device used, it suggests that interventions using mobile phones were effective at achieving weight loss, WMD = -1.78 kg (95% CI -2.92, -0.63). This systematic review and meta-analysis suggests that mobile electronic devices have the potential to facilitate weight loss in overweight and obese populations, but further work is needed to understand if these interventions have sustained benefit and how we can make these mHealth tools most effective on a large scale. As the field of healthcare increasingly utilizes novel mobile technologies, the focus must not be on any one specific device but on the best possible use of these tools to measure and understand behavior. As mobile electronic devices continue to increase in popularity and the associated technology continues to advance, the potential for the use of mobile devices in global healthcare is enormous. More RCTs with larger sample sizes need to be conducted to look at the cost-effectiveness, technical and financial feasibility of adapting such m

77 FR 24514 - Certain Consumer Electronics, Including Mobile Phones and Tablets; Institution of Investigation...

Science.gov (United States)

2012-04-24

..., Including Mobile Phones and Tablets; Institution of Investigation Pursuant to 19 U.S.C. 1337 AGENCY: U.S... mobile phones and tablets, by reason of infringement of certain claims of U.S. Patent No. 5,854,893... after importation of certain consumer electronics, including mobile phones and tablets, that infringe...

Intrinsic mobility limit for anisotropic electron transport in Alq3.

Science.gov (United States)

Drew, A J; Pratt, F L; Hoppler, J; Schulz, L; Malik-Kumar, V; Morley, N A; Desai, P; Shakya, P; Kreouzis, T; Gillin, W P; Kim, K W; Dubroka, A; Scheuermann, R

2008-03-21

Muon spin relaxation has been used to probe the charge carrier motion in the molecular conductor Alq3 (tris[8-hydroxy-quinoline] aluminum). At 290 K, the magnetic field dependence of the muon spin relaxation corresponds to that expected for highly anisotropic intermolecular electron hopping. Intermolecular mobility in the fast hopping direction has been found to be 0.23+/-0.03 cm2 V-1 s(-1) in the absence of an electric- field gradient, increasing to 0.32+/-0.06 cm2 V-1 s(-1) in an electric field gradient of 1 MV m(-1). These intrinsic mobility values provide an estimate of the upper limit for mobility achievable in bulk material.

78 FR 13895 - Certain Consumer Electronics, Including Mobile Phones and Tablets; Commission Determination Not...

Science.gov (United States)

2013-03-01

... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-839] Certain Consumer Electronics... importation of certain consumer electronics, including mobile phones and tablets, by reason of infringement of..., Washington (collectively, ``HTC''); LG Electronics, Inc. of Seoul, Republic of Korea, LG Electronics U.S.A...

Pressure effects on electron reactions and mobility in nonpolar liquids

International Nuclear Information System (INIS)

Holroyd, R.A.; Nishikawa, Masaru

2002-01-01

High pressure studies have elucidated the mechanisms of both electron reactions and electron transport in nonpolar liquids and provided information about the partial molar volumes of ions and electrons. The very large volume changes associated with electron attachment reactions have been explained as due to electrostriction by the ions, calculated with a continuum model, but modified to include the formation of a glassy shell of solvent molecules around the ion. The mobilities of electrons in cases where the electron is trapped can now be understood by comparing the trap cavity volume with the volume of electrostriction of the solvent around the cavity. In cases where the electron is quasi-free the compressibility dependent potential fluctuations are shown to be important. The isothermal compressibility is concluded to be the single most important parameter determining the behavior of excess electrons in liquids

Electron mobility on the surface of liquid Helium: influence of surface level atoms and depopulation of lowest subbands

International Nuclear Information System (INIS)

Grigoriev, P. D.; Dyugaev, A. M.; Lebedeva, E. V.

2008-01-01

The temperature dependence of electron mobility is examined. We calculate the contribution to the electron scattering rate from the surface level atoms (SLAs), proposed in [10]. This contribution is substantial at low temperatures T < 0.5, when the He vapor concentration is exponentially small. We also study the effect of depopulation of the lowest energy subband, which leads to an increase in the electron mobility at high temperature. The results explain certain long-standing discrepancies between the existing theory and experiment on electron mobility on the surface of liquid helium

Study of electron mobility in small molecular SAlq by transient electroluminescence method

Science.gov (United States)

Kumar, Pankaj; Jain, S. C.; Kumar, Vikram; Chand, Suresh; Kamalasanan, M. N.; Tandon, R. P.

2007-12-01

The study of electron mobility of bis(2-methyl 8-hydroxyquinoline) (triphenyl siloxy) aluminium (SAlq) by transient electroluminescence (EL) is presented. An EL device is fabricated in bilayer, ITO/N,N'-diphenyl-N, N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD)/SAlq/LiF/Al configuration. The temporal evaluation of the EL with respect to the step voltage pulse is characterized by a delay time followed by a fast initial rise, which is followed by a slower rise. The delay time between the applied electrical pulse and the onset of EL is correlated with the carrier mobility (electron in our case). Transient EL studies for SAlq have been carried out at different temperatures and different applied electric fields. The electron mobility in SAlq is found to be field and temperature dependent and calculated to be 6.9 × 10-7 cm2 V-1 s-1 at 2.5 × 106 V cm-1 and 308 K. The EL decays immediately as the voltage is turned off and does not depend on the amplitude of the applied voltage pulse or dc offset.

Theoretical prediction of high electron mobility in multilayer MoS2 heterostructured with MoSe2

Science.gov (United States)

Ji, Liping; Shi, Juan; Zhang, Z. Y.; Wang, Jun; Zhang, Jiachi; Tao, Chunlan; Cao, Haining

2018-01-01

Two-dimensional (2D) MoS2 has been considered to be one of the most promising semiconducting materials with the potential to be used in novel nanoelectronic devices. High carrier mobility in the semiconductor is necessary to guarantee a low power dissipation and a high switch speed of the corresponding electronic device. Strain engineering in 2D materials acts as an important approach to tailor and design their electronic and carrier transport properties. In this work, strain is introduced to MoS2 through perpendicularly building van der Waals heterostructures MoSe2-MoS2. Our first-principles calculations demonstrate that acoustic-phonon-limited electron mobility can be significantly enhanced in the heterostructures compared with that in pure multilayer MoS2. It is found that the effective electron mass and the deformation potential constant are relatively smaller in the heterostructures, which is responsible for the enhancement in the electron mobility. Overall, the electron mobility in the heterostructures is about 1.5 times or more of that in pure multilayer MoS2 with the same number of layers for the studied structures. These results indicate that MoSe2 is an excellent material to be heterostructured with multilayer MoS2 to improve the charge transport property.

Influence of 60Co gamma radiation on fluorine plasma treated enhancement-mode high-electron-mobility transistor

International Nuclear Information System (INIS)

Quan Si; Hao Yue; Ma Xiao-Hua; Yu Hui-You

2011-01-01

AlGaN/GaN depletion-mode high-electron-mobility transistor (D-HEMT) and fluorine (F) plasma treated enhancement-mode high-electron-mobility transistor (E-HEMT) are exposed to 60 Co gamma radiation with a dose of 1.6 Mrad (Si). No degradation is observed in the performance of D-HEMT. However, the maximum transconductance of E-HEMT is increased after radiation. The 2DEG density and the mobility are calculated from the results of capacitance-voltage measurement. The electron mobility decreases after fluorine plasma treatment and recovers after radiation. Conductance measurements in a frequency range from 10 kHz to 1 MHz are used to characterize the trapping effects in the devices. A new type of trap is observed in the F plasma treated E-HEMT compared with the D-HEMT, but the density of the trap decreases by radiation. Fitting of G p /ω data yields the trap densities D T = (1 − 3) × 10 12 cm −2 · eV −1 and D T = (0.2 − 0.8) × 10 12 cm −2 · eV −1 before and after radiation, respectively. The time constant is 0.5 ms-6 ms. With F plasma treatment, the trap is introduced by etch damage and degrades the electronic mobility. After 60 Co gamma radiation, the etch damage decreases and the electron mobility is improved. The gamma radiation can recover the etch damage caused by F plasma treatment. (interdisciplinary physics and related areas of science and technology)

The Internet in Connecting Electronics Health Record Mobile Clients

Czech Academy of Sciences Publication Activity Database

Hanzlíček, Petr; Špidlen, Josef; Zvárová, Jana

2002-01-01

Roč. 10, č. 6 (2002), s. 502-503 ISSN 0928-7329. [Mednet 2002. Qualit-e-Health. World Conference on the Internet in Medicine /7./. 04.12.2002-07.12.2002, Amsterdam] Institutional research plan: AV0Z1030915 Keywords : distributed electronic health record * mobile health data access Subject RIV: BD - Theory of Information

Electron mobility in supercritical pentanes as a function of density and temperature

International Nuclear Information System (INIS)

Itoh, Kengo; Nakagawa, Kazumichi; Nishikawa, Masaru

1988-01-01

The excess electron mobility in supercritical n-, iso- and neopentane was measured isothermally as a function of density. The density-normalized mobility μN in all three isomers goes through a minimum at a density below the respective critical densities, and the mobility is quite temperature-dependent in this region, then goes through a minimum. The μN behavior around the minimum in n-pentane is well accounted for by the Cohen-Lekner model with the structure factor S(K) estimated from the speed of sound, while that in iso- and neopentane is not. (author)

Electronic Spin Storage in an Electrically Readable Nuclear Spin Memory with a Lifetime >100 Seconds

Science.gov (United States)

McCamey, D. R.; Van Tol, J.; Morley, G. W.; Boehme, C.

2010-12-01

Electron spins are strong candidates with which to implement spintronics because they are both mobile and able to be manipulated. The relatively short lifetimes of electron spins, however, present a problem for the long-term storage of spin information. We demonstrated an ensemble nuclear spin memory in phosphorous-doped silicon, which can be read out electrically and has a lifetime exceeding 100 seconds. The electronic spin information can be mapped onto and stored in the nuclear spin of the phosphorus donors, and the nuclear spins can then be repetitively read out electrically for time periods that exceed the electron spin lifetime. We discuss how this memory can be used in conjunction with other silicon spintronic devices.

Electron small polarons and their mobility in iron (oxyhydr)oxide nanoparticles

DEFF Research Database (Denmark)

Katz, Jordan E; Zhang, Xiaoyi; Attenkofer, Klaus

2012-01-01

Electron mobility within iron (oxyhydr)oxides enables charge transfer between widely separated surface sites. There is increasing evidence that this internal conduction influences the rates of interfacial reactions and the outcomes of redox-driven phase transformations of environmental interest....... To determine the links between crystal structure and charge-transport efficiency, we used pump-probe spectroscopy to study the dynamics of electrons introduced into iron(III) (oxyhydr)oxide nanoparticles via ultrafast interfacial electron transfer. Using time-resolved x-ray spectroscopy and ab initio...

k-Space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures

OpenAIRE

Lev, L. L.; Maiboroda, I. O.; Husanu, M. -A.; Grichuk, E. S.; Chumakov, N. K.; Ezubchenko, I. S.; Chernykh, I. A.; Wang, X.; Tobler, B.; Schmitt, T.; Zanaveskin, M. L.; Valeyev, V. G.; Strocov, V. N.

2018-01-01

Nanostructures based on buried interfaces and heterostructures are at the heart of modern semiconductor electronics as well as future devices utilizing spintronics, multiferroics, topological effects and other novel operational principles. Knowledge of electronic structure of these systems resolved in electron momentum k delivers unprecedented insights into their physics. Here, we explore 2D electron gas formed in GaN/AlGaN high-electron-mobility transistor (HEMT) heterostructures with an ult...

78 FR 56737 - Certain Portable Electronic Communications Devices, Including Mobile Phones and Components...

Science.gov (United States)

2013-09-13

... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-885] Certain Portable Electronic Communications Devices, Including Mobile Phones and Components Thereof; Commission Determination Not To Review an... on the Commission's electronic docket (EDIS) at http://edis.usitc.gov . Hearing-impaired persons are...

78 FR 49764 - Certain Portable Electronic Communications Devices, Including Mobile Phones and Components...

Science.gov (United States)

2013-08-15

... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-885] Certain Portable Electronic Communications Devices, Including Mobile Phones and Components Thereof; Commission Determination Not To Review n... for this investigation may be viewed on the Commission's electronic docket (EDIS) at http://edis.usitc...

78 FR 72712 - Certain Portable Electronic Communications Devices, Including Mobile Phones and Components...

Science.gov (United States)

2013-12-03

... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-885] Certain Portable Electronic Communications Devices, Including Mobile Phones and Components Thereof; Commission Determination Not To Review an... this investigation may be viewed on the Commission's electronic docket (EDIS) at http://edis.usitc.gov...

Mobile Search and Advertising

OpenAIRE

Lovitskii, Vladimir; McCaffery, Colin; Thrasher, Michael; Traynor, David; Wright, Peter

2009-01-01

Mobile advertising is a rapidly growing sector providing brands and marketing agencies the opportunity to connect with consumers beyond traditional and digital media and instead communicate directly on their mobile phones. Mobile advertising will be intrinsically linked with mobile search, which has transported from the internet to the mobile and is identified as an area of potential growth. The result of mobile searching show that as a general rule such search result exceed 1...

Intrinsic Charge Carrier Mobility in Single-Layer Black Phosphorus.

Science.gov (United States)

Rudenko, A N; Brener, S; Katsnelson, M I

2016-06-17

We present a theory for single- and two-phonon charge carrier scattering in anisotropic two-dimensional semiconductors applied to single-layer black phosphorus (BP). We show that in contrast to graphene, where two-phonon processes due to the scattering by flexural phonons dominate at any practically relevant temperatures and are independent of the carrier concentration n, two-phonon scattering in BP is less important and can be considered negligible at n≳10^{13}  cm^{-2}. At smaller n, however, phonons enter in the essentially anharmonic regime. Compared to the hole mobility, which does not exhibit strong anisotropy between the principal directions of BP (μ_{xx}/μ_{yy}∼1.4 at n=10^{13} cm^{-2} and T=300  K), the electron mobility is found to be significantly more anisotropic (μ_{xx}/μ_{yy}∼6.2). Absolute values of μ_{xx} do not exceed 250 (700)  cm^{2} V^{-1} s^{-1} for holes (electrons), which can be considered as an upper limit for the mobility in BP at room temperature.

Density-dependent electron transport and precise modeling of GaN high electron mobility transistors

Energy Technology Data Exchange (ETDEWEB)

Bajaj, Sanyam, E-mail: bajaj.10@osu.edu; Shoron, Omor F.; Park, Pil Sung; Krishnamoorthy, Sriram; Akyol, Fatih; Hung, Ting-Hsiang [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Reza, Shahed; Chumbes, Eduardo M. [Raytheon Integrated Defense Systems, Andover, Massachusetts 01810 (United States); Khurgin, Jacob [Department of Electrical and Computer Engineering, Johns Hopkins University, Baltimore, Maryland 21218 (United States); Rajan, Siddharth [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Material Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

2015-10-12

We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors (HEMTs). Pulsed IV measurements established increasing electron velocities with decreasing sheet charge densities, resulting in saturation velocity of 1.9 × 10{sup 7 }cm/s at a low sheet charge density of 7.8 × 10{sup 11 }cm{sup −2}. An optical phonon emission-based electron velocity model for GaN is also presented. It accommodates stimulated longitudinal optical (LO) phonon emission which clamps the electron velocity with strong electron-phonon interaction and long LO phonon lifetime in GaN. A comparison with the measured density-dependent saturation velocity shows that it captures the dependence rather well. Finally, the experimental result is applied in TCAD-based device simulator to predict DC and small signal characteristics of a reported GaN HEMT. Good agreement between the simulated and reported experimental results validated the measurement presented in this report and established accurate modeling of GaN HEMTs.

Density-dependent electron transport and precise modeling of GaN high electron mobility transistors

International Nuclear Information System (INIS)

Bajaj, Sanyam; Shoron, Omor F.; Park, Pil Sung; Krishnamoorthy, Sriram; Akyol, Fatih; Hung, Ting-Hsiang; Reza, Shahed; Chumbes, Eduardo M.; Khurgin, Jacob; Rajan, Siddharth

2015-01-01

We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors (HEMTs). Pulsed IV measurements established increasing electron velocities with decreasing sheet charge densities, resulting in saturation velocity of 1.9 × 10 7  cm/s at a low sheet charge density of 7.8 × 10 11  cm −2 . An optical phonon emission-based electron velocity model for GaN is also presented. It accommodates stimulated longitudinal optical (LO) phonon emission which clamps the electron velocity with strong electron-phonon interaction and long LO phonon lifetime in GaN. A comparison with the measured density-dependent saturation velocity shows that it captures the dependence rather well. Finally, the experimental result is applied in TCAD-based device simulator to predict DC and small signal characteristics of a reported GaN HEMT. Good agreement between the simulated and reported experimental results validated the measurement presented in this report and established accurate modeling of GaN HEMTs

Optical phonon scattering on electronic mobility in Al2O3/AlGaN/AlN/GaN heterostructures

Science.gov (United States)

Zhou, X. J.; Qu, Y.; Ban, S. L.; Wang, Z. P.

2017-12-01

Considering the built-in electric fields and the two-mode property of transverse optical phonons in AlGaN material, the electronic eigen-energies and wave functions are obtained by solving Schrödinger equation with the finite difference method. The dispersion relations and potentials of the optical phonons are given by the transfer matrix method. The mobility of the two dimensional electron gas influenced by the optical phonons in Al2O3/AlGaN/AlN/GaN heterostructures is investigated based on the theory of Lei-Ting force balance equation. It is found that the scattering from the half-space phonons is the main factor affecting the electronic mobility, and the influence of the other phonons can be ignored. The results show that the mobility decreases with increasing the thicknesses of Al2O3 and AlN layers, but there is no definite relationship between the mobility and the thickness of AlGaN barrier. The mobility is obviously reduced by increasing Al component in AlGaN crystal to show that the effect of ternary mixed crystals is important. It is also found that the mobility increases first and then decreases as the increment of the fixed charges, but decreases always with increasing temperature. The heterostructures constructed here can be good candidates as metal-oxide-semiconductor high-electron-mobility-transistors since they have higher electronic mobility due to the influence from interface phonons weakened by the AlN interlayer.

Universality of electron mobility in LaAlO3/SrTiO3 and bulk SrTiO3

Science.gov (United States)

Trier, Felix; Reich, K. V.; Christensen, Dennis Valbjørn; Zhang, Yu; Tuller, Harry L.; Chen, Yunzhong; Shklovskii, B. I.; Pryds, Nini

2017-08-01

Metallic LaAlO3/SrTiO3 (LAO/STO) interfaces attract enormous attention, but the relationship between the electron mobility and the sheet electron density, ns, is poorly understood. Here, we derive a simple expression for the three-dimensional electron density near the interface, n3 D , as a function of ns and find that the mobility for LAO/STO-based interfaces depends on n3 D in the same way as it does for bulk doped STO. It is known that undoped bulk STO is strongly compensated with N ≃5 ×1018 cm-3 background donors and acceptors. In intentionally doped bulk STO with a concentration of electrons n3 DN , the mobility collapses because scattering happens on n3 D intentionally introduced donors. For LAO/STO, the polar catastrophe which provides electrons is not supposed to provide an equal number of random donors and thus the mobility should be larger. The fact that the mobility is still the same implies that for the LAO/STO, the polar catastrophe model should be revisited.

An analytical model of anisotropic low-field electron mobility in wurtzite indium nitride

International Nuclear Information System (INIS)

Wang, Shulong; Liu, Hongxia; Song, Xin; Guo, Yulong; Yang, Zhaonian

2014-01-01

This paper presents a theoretical analysis of anisotropic transport properties and develops an anisotropic low-field electron analytical mobility model for wurtzite indium nitride (InN). For the different effective masses in the Γ-A and Γ-M directions of the lowest valley, both the transient and steady state transport behaviors of wurtzite InN show different transport characteristics in the two directions. From the relationship between velocity and electric field, the difference is more obvious when the electric field is low in the two directions. To make an accurate description of the anisotropic transport properties under low field, for the first time, we present an analytical model of anisotropic low-field electron mobility in wurtzite InN. The effects of different ionized impurity scattering models on the low-field mobility calculated by Monte Carlo method (Conwell-Weisskopf and Brooks-Herring method) are also considered. (orig.)

Resonance scattering and low-temperature electron mobility in HgTe-based gapless solid solutions

International Nuclear Information System (INIS)

Raikh, M.Eh.; Ehfros, A.L.

1986-01-01

Low-temperature electron mobility in a gapless semiconductor conditioned by electron resonance scattering on neutral acceptors, the levels of which are located in narrow vicinity near the Fermi level, is calculated. Mobility turns to be inverse proportional to density of acceptor states at the Fermi level. If donor concentration is rather high, then presence of a Coulomb gap at the Fermi level in the density of acceptor states conditioned by long-range character of Coulomb interaction should be taken into account for calculation of mobility. The Fermi level is placed in the tail of the acceptor state density at rather low donor concentration, and the Coulomb gap is absent at the Fermi level. A case of high acceptor concentration, when the acceptor states are delocalized at the Fermi level, is also considered

M&E-NetPay: A Micropayment System for Mobile and Electronic Commerce

Directory of Open Access Journals (Sweden)

Xiaodi Huang

2016-08-01

Full Text Available As an increasing number of people purchase goods and services online, micropayment systems are becoming particularly important for mobile and electronic commerce. We have designed and developed such a system called M&E-NetPay (Mobile and Electronic NetPay. With open interoperability and mobility, M&E-NetPay uses web services to connect brokers and vendors, providing secure, flexible and reliable credit services over the Internet. In particular, M&E-NetPay makes use of a secure, inexpensive and debit-based off-line protocol that allows vendors to interact only with customers, after validating coins. The design of the architecture and protocol of M&E-NetPay are presented, together with the implementation of its prototype in ringtone and wallpaper sites. To validate our system, we have conducted its evaluations on performance, usability and heuristics. Furthermore, we compare our system to the CORBA-based (Common Object Request Broker Architecture off-line micro-payment systems. The results have demonstrated that M&E-NetPay outperforms the .NET-based M&E-NetPay system in terms of performance and user satisfaction.

High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces

International Nuclear Information System (INIS)

Chan, Silvia H; DenBaars, Steven P; Keller, Stacia; Tahhan, Maher; Li, Haoran; Romanczyk, Brian; Mishra, Umesh K

2016-01-01

This paper reports high two-dimensional electron gas mobility attained from the regrowth of the AlGaN gating layer on ex situ GaN surfaces. To repair etch-damaged GaN surfaces, various pretreatments were conducted via metalorganic chemical vapor deposition, followed by a regrown AlGaN/GaN mobility test structure to evaluate the extent of recovery. The developed treatment process that was shown to significantly improve the electron mobility consisted of a N 2  + NH 3 pre-anneal plus an insertion of a 4 nm or thicker GaN interlayer prior to deposition of the AlGaN gating layer. Using the optimized process, a high electron mobility transistor (HEMT) device was fabricated which exhibited a high mobility of 1450 cm 2 V −1 s −1 (R sh  = 574 ohm/sq) and low dispersion characteristics. The additional inclusion of an in situ Al 2 O 3 dielectric into the regrowth process for MOS-HEMTs still preserved the transport properties near etch-impacted areas. (paper)

Collaborative Research Centre 694 “Integration of electronic components into mobile systems”-Motivation and survey

Science.gov (United States)

Weckenmann, Albert; Schmidt, Lorenz-Peter; Bookjans, Martin

Within the collaborative research centre 694 'Integration of electronic components into mobile systems' intelligent mechatronic systems are explored for application at the place of action. Especially in the automotive sector highest requirements on system safety are combined with an enormous importance of the production for the whole national economy. Therefore the collaborative research centre is led by the vision to integrate electronic components in sensors and actors of mobile systems. About 30 scientists at nine participating academic and non-academic institutions in Erlangen explore mechatronic solutions for the requirements on manufacturing processes, electronic systems and quality management techniques within the car of the future.

Calculation and analysis of the mobility and diffusion coefficient of thermal electrons in methane/air premixed flames

KAUST Repository

Bisetti, Fabrizio

2012-12-01

Simulations of ion and electron transport in flames routinely adopt plasma fluid models, which require transport coefficients to compute the mass flux of charged species. In this work, the mobility and diffusion coefficient of thermal electrons in atmospheric premixed methane/air flames are calculated and analyzed. The electron mobility is highest in the unburnt region, decreasing more than threefold across the flame due to mixture composition effects related to the presence of water vapor. Mobility is found to be largely independent of equivalence ratio and approximately equal to 0.4m 2V -1s -1 in the reaction zone and burnt region. The methodology and results presented enable accurate and computationally inexpensive calculations of transport properties of thermal electrons for use in numerical simulations of charged species transport in flames. © 2012 The Combustion Institute.

Density induced crossover of electron mobilities in fluid C3 hydrocarbons; liquid phase behavior

International Nuclear Information System (INIS)

Gee, N.; Freeman, G.R.

1980-01-01

At n = 2 x 10 20 mol/cm 3 in the saturated vapors, the density normalized mobility (μn) of electrons equalled 2.4 x 10 23 mol/cmVs in cyclopropane, 1.5 x 10 23 in propane and 5.4 x 10 22 in propene. In cyclopropane and propene μn decreased due to quasilocalization at n > 4 x 10 20 mol/cm 3 . In propane quasilocalization occurred at n > 8 x 10 20 mol/cm 3 . The more extensive quasilocalization in cyclopropane caused mobilities to be lower than those in propane at the same density when the densities were greater than 1.3 x 10 21 mol/cm 3 . In propylene, μn remained below those in the other compounds at all gas densities. In the liquid phase the mobilities were affected more by the changes of temperature than by those of density. The mobilities at a given temperature decreased in the order propane > propene > cyclopropane. It is curious that the electron traps are deeper in cyclopropane than in propene. The energies of both thermal and optical excitation of solvated electrons may be expressed by equations of the form E 0 = E(0) - aT over considerable ranges of temperature T. The thermal value of a/E(0) is 1.7 x 10 -3 K -1 in many hydrocarbons, estimated from the mobilities. The equivalent ratio of the optical parameters also equals 1.7 x 10 -3 K -1 in ethers and in ammonia. (author)

Tuning the Electronic Properties, Effective Mass and Carrier Mobility of MoS2 Monolayer by Strain Engineering: First-Principle Calculations

Science.gov (United States)

Phuc, Huynh V.; Hieu, Nguyen N.; Hoi, Bui D.; Hieu, Nguyen V.; Thu, Tran V.; Hung, Nguyen M.; Ilyasov, Victor V.; Poklonski, Nikolai A.; Nguyen, Chuong V.

2018-01-01

In this paper, we studied the electronic properties, effective masses, and carrier mobility of monolayer MoS_2 using density functional theory calculations. The carrier mobility was considered by means of ab initio calculations using the Boltzmann transport equation coupled with deformation potential theory. The effects of mechanical biaxial strain on the electronic properties, effective mass, and carrier mobility of monolayer MoS_2 were also investigated. It is demonstrated that the electronic properties, such as band structure and density of state, of monolayer MoS_2 are very sensitive to biaxial strain, leading to a direct-indirect transition in semiconductor monolayer MoS_2. Moreover, we found that the carrier mobility and effective mass can be enhanced significantly by biaxial strain and by lowering temperature. The electron mobility increases over 12 times with a biaxial strain of 10%, while the carrier mobility gradually decreases with increasing temperature. These results are very useful for the future nanotechnology, and they make monolayer MoS_2 a promising candidate for application in nanoelectronic and optoelectronic devices.

Multisubband electron mobility in a parabolic quantum well structure under the influence of an applied electric field

International Nuclear Information System (INIS)

Sahoo, N.; Sahu, T.

2014-01-01

We study the multisubband electron mobility in a barrier delta doped Al x Ga 1−x As parabolic quantum well structure under the influence of an applied electric field perpendicular to the interface plane. We consider the alloy fraction x = 0.3 for barriers and vary x from 0.0 to 0.1 for the parabolic well. Electrons diffuse into the well and confine within the triangular like potentials near the interfaces due to Coulomb interaction with ionized donors. The parabolic structure potential, being opposite in nature, partly compensates the Coulomb potential. The external electric field further amends the potential structure leading to an asymmetric potential profile. Accordingly the energy levels, wave functions and occupation of subbands change. We calculate low temperature electron mobility as a function of the electric field and show that when two subbands are occupied, the mobility is mostly dominated by ionised impurity scattering mediated by intersubband effects. As the field increases transition from double subband to single subband occupancy occurs. A sudden enhancement in mobility is obtained due to curtailment of intersubband effects. Thereafter the mobility is governed by both impurity and alloy disorder scatterings. Our analysis of mobility as a function of the electric field for different structural parameters shows interesting results. (semiconductor physics)

Molecular origin of differences in hole and electron mobility in amorphous Alq3--a multiscale simulation study.

Science.gov (United States)

Fuchs, Andreas; Steinbrecher, Thomas; Mommer, Mario S; Nagata, Yuki; Elstner, Marcus; Lennartz, Christian

2012-03-28

In order to determine the molecular origin of the difference in electron and hole mobilities of amorphous thin films of Alq(3) (meridional Alq(3) (tris(8-hydroxyquinoline) aluminium)) we performed multiscale simulations covering quantum mechanics, molecular mechanics and lattice models. The study includes realistic disordered morphologies, polarized site energies to describe diagonal disorder, quantum chemically calculated transfer integrals for the off-diagonal disorder, inner sphere reorganization energies and an approximative scheme for outer sphere reorganization energies. Intermolecular transfer rates were calculated via Marcus-theory and mobilities were simulated via kinetic Monte Carlo simulations and by a Master Equation approach. The difference in electron and hole mobility originates from the different localization of charge density in the radical anion (more delocalized) compared to the radical cation (more confined). This results in higher diagonal disorder for holes and less favourable overlap properties for the hole transfer integrals leading to an overall higher electron mobility.

Evaluation of electron mobility in InSb quantum wells by means of percentage-impact

International Nuclear Information System (INIS)

Mishima, T. D.; Edirisooriya, M.; Santos, M. B.

2014-01-01

In order to quantitatively analyze the contribution of each scattering factor toward the total carrier mobility, we use a new convenient figure-of-merit, named a percentage impact. The mobility limit due to a scattering factor, which is widely used to summarize a scattering analysis, has its own advantage. However, a mobility limit is not quite appropriate for the above purpose. A comprehensive understanding of the difference in contribution among many scattering factors toward the total carrier mobility can be obtained by evaluating percentage impacts of scattering factors, which can be straightforwardly calculated from their mobility limits and the total mobility. Our percentage impact analysis shows that threading dislocation is one of the dominant scattering factors for the electron transport in InSb quantum wells at room temperature

Theoretical modeling of electron mobility in superfluid {sup 4}He

Energy Technology Data Exchange (ETDEWEB)

Aitken, Frédéric; Bonifaci, Nelly [G2ELab-GreEn-ER, Equipe MDE, 21 Avenue des Martyrs, CS 90624, 38031 Grenoble Cedex 1 (France); Haeften, Klaus von [Department of Physics and Astronomy, University of Leicester, University Road, Leicester LE1 7RH (United Kingdom); Eloranta, Jussi, E-mail: Jussi.Eloranta@csun.edu [Department of Chemistry and Biochemistry, California State University at Northridge, 18111 Nordhoff St., Northridge, California 91330 (United States)

2016-07-28

The Orsay-Trento bosonic density functional theory model is extended to include dissipation due to the viscous response of superfluid {sup 4}He present at finite temperatures. The viscous functional is derived from the Navier-Stokes equation by using the Madelung transformation and includes the contribution of interfacial viscous response present at the gas-liquid boundaries. This contribution was obtained by calibrating the model against the experimentally determined electron mobilities from 1.2 K to 2.1 K along the saturated vapor pressure line, where the viscous response is dominated by thermal rotons. The temperature dependence of ion mobility was calculated for several different solvation cavity sizes and the data are rationalized in the context of roton scattering and Stokes limited mobility models. Results are compared to the experimentally observed “exotic ion” data, which provides estimates for the corresponding bubble sizes in the liquid. Possible sources of such ions are briefly discussed.

77 FR 34063 - Certain Electronic Devices, Including Mobile Phones and Tablet Computers, and Components Thereof...

Science.gov (United States)

2012-06-08

... Phones and Tablet Computers, and Components Thereof Institution of Investigation AGENCY: U.S... the United States after importation of certain electronic devices, including mobile phones and tablet... mobile phones and tablet computers, and components thereof that infringe one or more of claims 1-3 and 5...

Ballistic Transport Exceeding 28 μm in CVD Grown Graphene.

Science.gov (United States)

Banszerus, Luca; Schmitz, Michael; Engels, Stephan; Goldsche, Matthias; Watanabe, Kenji; Taniguchi, Takashi; Beschoten, Bernd; Stampfer, Christoph

2016-02-10

We report on ballistic transport over more than 28 μm in graphene grown by chemical vapor deposition (CVD) that is fully encapsulated in hexagonal boron nitride. The structures are fabricated by an advanced dry van-der-Waals transfer method and exhibit carrier mobilities of up to three million cm(2)/(Vs). The ballistic nature of charge transport is probed by measuring the bend resistance in cross- and square-shaped devices. Temperature-dependent measurements furthermore prove that ballistic transport is maintained exceeding 1 μm up to 200 K.

The use of mobile learning application to the fundament of digital electronics course

Science.gov (United States)

Rakhmawati, L.; Firdha, A.

2018-01-01

A new trend in e-learning is known as Mobile Learning. Learning through mobile phones have become part of the educative process. Thus, the purposes of this study are to develop a mobile application for the Fundament of Digital Electronics course that consists of number systems operation, logic gates, and Boolean Algebra, and to assess the readiness, perceptions, and effectiveness of students in the use of mobile devices for learning in the classroom. This research uses Research and Development (R&D) method. The design used in this research, by doing treatment in one class and observing by using Android-based mobile application instructional media. The result obtained from this research shows that the test has 80 % validity aspect, 82 % of the user from senior high school students gives a positive response in using the application of mobile learning, and based on the result of post-test, 90, 90% students passed the exam. At last, it can be concluded that the use of the mobile learning application makes the learning process more effective when it is used in the teaching-learning process.

Effect of temperature and pressure on excess electron mobility in n-hexane, 2,2,4-trimethylpentane, and tetramethylsilane

International Nuclear Information System (INIS)

Munoz, R.C.; Holroyd, R.A.

1986-01-01

Measurements of excess electron mobility are reported for liquid n-hexane, 2,2,4-trimethylpentane, and tetramethylsilane for pressures from 1 to 2500 bar and for temperatures from 18 to 120 0 C. For tetramethylsilane, a liquid that exhibits a high electron mobility, the mobility at constant density is proportional to T/sup -0.9/ between 25 and 100 0 C. The results are compared with the Basak--Cohen deformation potential theory. For n-hexane, where the mobility is low, Arrhenius behavior is observed. The isochoric activation energy increases with density. The results in this case are consistent with both the two-state and hopping models. In 2,2,4-trimethylpentane the mobility increases with increasing pressure at room temperature and decreases at high temperature. At 2500 bar and at intermediate temperatures (70--80 0 C) the mobility is approximately constant

Fabrication of enhancement-mode AlGaN/GaN high electron mobility transistors using double plasma treatment

Energy Technology Data Exchange (ETDEWEB)

Lim, Jong-Won, E-mail: jwlim@etri.re.kr [Photonic/Wireless Convergence Components Dept., IT Materials and Components Lab., Electronics and Telecommunications Research Institute, Daejeon 305-700 (Korea, Republic of); Ahn, Ho-Kyun; Kim, Seong-il; Kang, Dong-Min; Lee, Jong-Min; Min, Byoung-Gue; Lee, Sang-Heung; Yoon, Hyung-Sup; Ju, Chull-Won; Kim, Haecheon; Mun, Jae-Kyoung; Nam, Eun-Soo [Photonic/Wireless Convergence Components Dept., IT Materials and Components Lab., Electronics and Telecommunications Research Institute, Daejeon 305-700 (Korea, Republic of); Park, Hyung-Moo [Photonic/Wireless Convergence Components Dept., IT Materials and Components Lab., Electronics and Telecommunications Research Institute, Daejeon 305-700 (Korea, Republic of); Division of Electronics and Electrical Engineering, Dongguk University, Seoul (Korea, Republic of)

2013-11-29

We report the fabrication and DC and microwave characteristics of 0.5 μm AlGaN/GaN high electron mobility transistors using double plasma treatment process. Silicon nitride layers 700 and 150 Å thick were deposited by plasma-enhanced chemical vapor deposition at 260 °C to protect the device and to define the gate footprint. The double plasma process was carried out by two different etching techniques to obtain enhancement-mode AlGaN/GaN high electron mobility transistors with 0.5 μm gate lengths. The enhancement-mode AlGaN/GaN high electron mobility transistor was prepared in parallel to the depletion-mode AlGaN/GaN high electron mobility transistor device on one wafer. Completed double plasma treated 0.5 μm AlGaN/GaN high electron mobility transistor devices fabricated by dry etching exhibited a peak transconductance, gm, of 330 mS/mm, a breakdown voltage of 115 V, a current-gain cutoff frequency (f{sub T}) of 18 GHz, and a maximum oscillation frequency (f{sub max}) of 66 GHz. - Highlights: • The double plasma process was carried out by two different etching techniques. • Double plasma treated device exhibited a transconductance of 330 mS/mm. • Completed 0.5 μm gate device exhibited a current-gain cutoff frequency of 18 GHz. • The off-state breakdown voltage of 115 V for 0.5 μm gate device was obtained. • Continuous-wave output power density of 4.3 W/mm was obtained at 2.4 GHz.

Fabrication of enhancement-mode AlGaN/GaN high electron mobility transistors using double plasma treatment

International Nuclear Information System (INIS)

Lim, Jong-Won; Ahn, Ho-Kyun; Kim, Seong-il; Kang, Dong-Min; Lee, Jong-Min; Min, Byoung-Gue; Lee, Sang-Heung; Yoon, Hyung-Sup; Ju, Chull-Won; Kim, Haecheon; Mun, Jae-Kyoung; Nam, Eun-Soo; Park, Hyung-Moo

2013-01-01

We report the fabrication and DC and microwave characteristics of 0.5 μm AlGaN/GaN high electron mobility transistors using double plasma treatment process. Silicon nitride layers 700 and 150 Å thick were deposited by plasma-enhanced chemical vapor deposition at 260 °C to protect the device and to define the gate footprint. The double plasma process was carried out by two different etching techniques to obtain enhancement-mode AlGaN/GaN high electron mobility transistors with 0.5 μm gate lengths. The enhancement-mode AlGaN/GaN high electron mobility transistor was prepared in parallel to the depletion-mode AlGaN/GaN high electron mobility transistor device on one wafer. Completed double plasma treated 0.5 μm AlGaN/GaN high electron mobility transistor devices fabricated by dry etching exhibited a peak transconductance, gm, of 330 mS/mm, a breakdown voltage of 115 V, a current-gain cutoff frequency (f T ) of 18 GHz, and a maximum oscillation frequency (f max ) of 66 GHz. - Highlights: • The double plasma process was carried out by two different etching techniques. • Double plasma treated device exhibited a transconductance of 330 mS/mm. • Completed 0.5 μm gate device exhibited a current-gain cutoff frequency of 18 GHz. • The off-state breakdown voltage of 115 V for 0.5 μm gate device was obtained. • Continuous-wave output power density of 4.3 W/mm was obtained at 2.4 GHz

1.5-V-threshold-voltage Schottky barrier normally-off AlGaN/GaN high-electron-mobility transistors with f T/f max of 41/125 GHz

Science.gov (United States)

Hou, Bin; Ma, Xiaohua; Yang, Ling; Zhu, Jiejie; Zhu, Qing; Chen, Lixiang; Mi, Minhan; Zhang, Hengshuang; Zhang, Meng; Zhang, Peng; Zhou, Xiaowei; Hao, Yue

2017-07-01

In this paper, a normally-off AlGaN/GaN high-electron-mobility transistors (HEMT) fabricated using inductively coupled plasma (ICP) CF4 plasma recessing and an implantation technique is reported. A gate-to-channel distance of ˜10 nm and an equivalent negative fluorine sheet charge density of -1.21 × 1013 cm-2 extracted using a simple threshold voltage (V th) analytical model result in a high V th of 1.5 V, a peak transconductance of 356 mS/mm, and a subthreshold slope of 133 mV/decade. A small degradation of channel mobility leads to a high RF performance with f T/f max of 41/125 GHz, resulting in a record high f T × L g product of 10.66 GHz·µm among Schottky barrier AlGaN/GaN normally-off HEMTs with V th exceeding 1 V, to the best of our knowledge.

Strain engineering on electronic structure and carrier mobility in monolayer GeP3

Science.gov (United States)

Zeng, Bowen; Long, Mengqiu; Zhang, Xiaojiao; Dong, Yulan; Li, Mingjun; Yi, Yougen; Duan, Haiming

2018-06-01

Using density functional theory coupled with the Boltzmann transport equation with relaxation time approximation, we have studied the strain effect on the electronic structure and carrier mobility of two-dimensional monolayer GeP3. We find that the energies of valence band maximum and conduction band minimum are nearly linearly shifted with a biaxial strain in the range of  ‑4% to 6%, and the band structure experiences a remarkable transition from semiconductor to metal with the appropriate compression (‑5% strain). Under biaxial strain, the mobility of the electron and hole in monolayer GeP3 reduces and increases by more than one order of magnitude, respectively. It is suggested that it is possible to perform successive transitions from an n-type semiconductor (‑4% strain) to a good performance p-semiconductor (+6% strain) by applying strain in monolayer GeP3, which is potentially useful for flexible electronics and nanosized mechanical sensors.

Two-Dimensional Modeling of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistor

National Research Council Canada - National Science Library

Holmes, Kenneth

2002-01-01

Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT's) are microwave power devices that have the performance characteristics to improve the capabilities of current and future Navy radar and communication systems...

Electric field dependence of the electron mobility in bulk wurtzite ZnO

Indian Academy of Sciences (India)

ZnO) material is studied. The low-field electron mobility is calculated as a function of doping concentration and lattice temperature. The results show that above nearly 50 K the electrical conduction is governed by activation through the bulk ...

AlGaN/GaN High Electron Mobility Transistors with Multi-MgxNy/GaN Buffer

OpenAIRE

Chang, P. C.; Lee, K. H.; Wang, Z. H.; Chang, S. J.

2014-01-01

We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-MgxNy/GaN buffer. Compared with conventional HEMT devices with a low-temperature GaN buffer, smaller gate and source-drain leakage current could be achieved with this new buffer design. Consequently, the electron mobility was larger for the proposed device due to the reduction of defect density and the corresponding improvement of crystalline quality as result of using the multi-MgxNy/GaN buffer.

The effect of charged quantum dots on the mobility of a two-dimensional electron gas: How important is the Coulomb scattering?

International Nuclear Information System (INIS)

Kurzmann, A.; Beckel, A.; Lorke, A.; Geller, M.; Ludwig, A.; Wieck, A. D.

2015-01-01

We have investigated the influence of a layer of charged self-assembled quantum dots (QDs) on the mobility of a nearby two-dimensional electron gas (2DEG). Time-resolved transconductance spectroscopy was used to separate the two contributions of the change in mobility, which are: (i) The electrons in the QDs act as Coulomb scatterers for the electrons in the 2DEG. (ii) The screening ability and, hence, the mobility of the 2DEG decreases when the charge carrier density is reduced by the charged QDs, i.e., the mobility itself depends on the charge carrier concentration. Surprisingly, we find a negligible influence of the Coulomb scattering on the mobility for a 2DEG, separated by a 30 nm tunneling barrier to the layer of QDs. This means that the mobility change is completely caused by depletion, i.e., reduction of the charge carrier density in the 2DEG, which indirectly influences the mobility

Density dependence of electron mobility in the accumulation mode for fully depleted SOI films

Energy Technology Data Exchange (ETDEWEB)

Naumova, O. V., E-mail: naumova@isp.nsc.ru; Zaitseva, E. G.; Fomin, B. I.; Ilnitsky, M. A.; Popov, V. P. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

2015-10-15

The electron mobility µ{sub eff} in the accumulation mode is investigated for undepleted and fully depleted double-gate n{sup +}–n–n{sup +} silicon-on-insulator (SOI) metal–oxide–semiconductor field-effect transistors (MOSFET). To determine the range of possible values of the mobility and the dominant scattering mechanisms in thin-film structures, it is proposed that the field dependence of the mobility µ{sub eff} be replaced with the dependence on the density N{sub e} of induced charge carriers. It is shown that the dependences µ{sub eff}(N{sub e}) can be approximated by the power functions µ{sub eff}(N{sub e}) ∝ N{sub e}{sup -n}, where the exponent n is determined by the chargecarrier scattering mechanism as in the mobility field dependence. The values of the exponent n in the dependences µ{sub eff}(N{sub e}) are determined when the SOI-film mode near one of its surfaces varies from inversion to accumulation. The obtained results are explained from the viewpoint of the electron-density redistribution over the SOI-film thickness and changes in the scattering mechanisms.

Intraoperative radiation therapy using mobile electron linear accelerators: Report of AAPM Radiation Therapy Committee Task Group No. 72

International Nuclear Information System (INIS)

Sam Beddar, A.; Biggs, Peter J.; Chang Sha; Ezzell, Gary A.; Faddegon, Bruce A.; Hensley, Frank W.; Mills, Michael D.

2006-01-01

Intraoperative radiation therapy (IORT) has been customarily performed either in a shielded operating suite located in the operating room (OR) or in a shielded treatment room located within the Department of Radiation Oncology. In both cases, this cancer treatment modality uses stationary linear accelerators. With the development of new technology, mobile linear accelerators have recently become available for IORT. Mobility offers flexibility in treatment location and is leading to a renewed interest in IORT. These mobile accelerator units, which can be transported any day of use to almost any location within a hospital setting, are assembled in a nondedicated environment and used to deliver IORT. Numerous aspects of the design of these new units differ from that of conventional linear accelerators. The scope of this Task Group (TG-72) will focus on items that particularly apply to mobile IORT electron systems. More specifically, the charges to this Task Group are to (i) identify the key differences between stationary and mobile electron linear accelerators used for IORT (ii) describe and recommend the implementation of an IORT program within the OR environment, (iii) present and discuss radiation protection issues and consequences of working within a nondedicated radiotherapy environment, (iv) describe and recommend the acceptance and machine commissioning of items that are specific to mobile electron linear accelerators, and (v) design and recommend an efficient quality assurance program for mobile systems

Electronic Payments using Mobile Communication Devices

NARCIS (Netherlands)

Waaij, B.D. van der; Siljee, B.I.J.; Broekhuijsen, B.J.; Ponsioen, C.; Maas, A.; Aten, R.M.; Hoepman, J.H.; Loon, J.H. van; Smit, M.

2009-01-01

A method of making a payment uses a first mobile communication device (1) and a second mobile communication device (2), each mobile communication device being provided with a respective near field communication unit (11, 21) and at least one of the mobile communication devices being provided with an

DEVELOPING OF ELECTRONIC TEACHING MATERIAL BASED ON MOBILE LEARNING IN THE WAVE SUBJECTS

Directory of Open Access Journals (Sweden)

D. H. Rif’ati

2015-07-01

Full Text Available In the advanced and modern era, technological sophistication led to learning which initially runs, in which teachers and students meet each other and communicate in the classroom, can be implemented through of information technology. Along with the development of information, where books and teachers who initially as a primary source of learning, are now beginning to experience growth from the internet. Mobile learning defined as mobile devices that are used in the learning process. The wave course is one of subject that must be taken by students of physics education in the third semester. This course emphasizes the concepts of wave were reviewed mathematically and the phenomenon that occurs in everyday life. Mobile learning developed in this study in the form of electronic teaching materials on subjects of waves. The aim of this study was to develop electronic teaching material in the form of mobile learning. The sample of this study is 80 students in the third semester students who are taking waves courses. The results show that mobile learning that has been developed has score 3.8 and included valid criteria. Pada era yang serba maju dan modern, kecanggihan teknologi menyebabkan pembelajaran yang awalnya berjalan satu arah, dimana guru dan siswa saling bertemu dan berkomunikasi di dalam kelas, dapat dilaksanakan melalui bantuan teknologi.informasi. Seiring dengan perkembangan informasi, buku dan guru yang awalnya sebagai sumber belajar utama, saat ini sudah mulai mengalami perkembangan dimana sumber belajar yang berasal dari internet sudah mulai sering dimanfaatkan dalam proses pembelajaran. Mobile larning didefinisikan sebagai perangkat mobile yang dipergunakan dalam proses belajar mengajar. Mata kuliah gelombang sendiri merupakan salah satu mata kuliah yang wajib ditempuh oleh mahasiswa program studi pendidikan fisika semester 3. Mata kuliah ini menekankan pada konsep gelombang yang ditinjau secara matematis dan fenomenanya yang terjadi

AlGaN/GaN High Electron Mobility Transistors with Multi-MgxNy/GaN Buffer

Directory of Open Access Journals (Sweden)

P. C. Chang

2014-01-01

Full Text Available We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-MgxNy/GaN buffer. Compared with conventional HEMT devices with a low-temperature GaN buffer, smaller gate and source-drain leakage current could be achieved with this new buffer design. Consequently, the electron mobility was larger for the proposed device due to the reduction of defect density and the corresponding improvement of crystalline quality as result of using the multi-MgxNy/GaN buffer.

Computational Search for Two-Dimensional MX2 Semiconductors with Possible High Electron Mobility at Room Temperature

Directory of Open Access Journals (Sweden)

Zhishuo Huang

2016-08-01

Full Text Available Neither of the two typical two-dimensional materials, graphene and single layer MoS 2 , are good enough for developing semiconductor logical devices. We calculated the electron mobility of 14 two-dimensional semiconductors with composition of MX 2 , where M (=Mo, W, Sn, Hf, Zr and Pt are transition metals, and Xs are S, Se and Te. We approximated the electron phonon scattering matrix by deformation potentials, within which long wave longitudinal acoustical and optical phonon scatterings were included. Piezoelectric scattering in the compounds without inversion symmetry is also taken into account. We found that out of the 14 compounds, WS 2 , PtS 2 and PtSe 2 are promising for logical devices regarding the possible high electron mobility and finite band gap. Especially, the phonon limited electron mobility in PtSe 2 reaches about 4000 cm 2 ·V - 1 ·s - 1 at room temperature, which is the highest among the compounds with an indirect bandgap of about 1.25 eV under the local density approximation. Our results can be the first guide for experiments to synthesize better two-dimensional materials for future semiconductor devices.

The influence of surfaces on the transient terahertz conductivity and electron mobility of GaAs nanowires

International Nuclear Information System (INIS)

Joyce, Hannah J; Baig, Sarwat A; Parkinson, Patrick; Davies, Christopher L; Boland, Jessica L; Herz, Laura M; Johnston, Michael B; Tan, H Hoe; Jagadish, Chennupati

2017-01-01

Bare unpassivated GaAs nanowires feature relatively high electron mobilities (400–2100 cm 2 V −1 s −1 ) and ultrashort charge carrier lifetimes (1–5 ps) at room temperature. These two properties are highly desirable for high speed optoelectronic devices, including photoreceivers, modulators and switches operating at microwave and terahertz frequencies. When engineering these GaAs nanowire-based devices, it is important to have a quantitative understanding of how the charge carrier mobility and lifetime can be tuned. Here we use optical-pump–terahertz-probe spectroscopy to quantify how mobility and lifetime depend on the nanowire surfaces and on carrier density in unpassivated GaAs nanowires. We also present two alternative frameworks for the analysis of nanowire photoconductivity: one based on plasmon resonance and the other based on Maxwell–Garnett effective medium theory with the nanowires modelled as prolate ellipsoids. We find the electron mobility decreases significantly with decreasing nanowire diameter, as charge carriers experience increased scattering at nanowire surfaces. Reducing the diameter from 50 nm to 30 nm degrades the electron mobility by up to 47%. Photoconductivity dynamics were dominated by trapping at saturable states existing at the nanowire surface, and the trapping rate was highest for the nanowires of narrowest diameter. The maximum surface recombination velocity, which occurs in the limit of all traps being empty, was calculated as 1.3  ×  10 6 cm s −1 . We note that when selecting the optimum nanowire diameter for an ultrafast device, there is a trade-off between achieving a short lifetime and a high carrier mobility. To achieve high speed GaAs nanowire devices featuring the highest charge carrier mobilities and shortest lifetimes, we recommend operating the devices at low charge carrier densities. (paper)

Electron mobility in the inversion layers of fully depleted SOI films

Energy Technology Data Exchange (ETDEWEB)

Zaitseva, E. G., E-mail: ZaytsevaElza@yandex.ru; Naumova, O. V.; Fomin, B. I. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

2017-04-15

The dependences of the electron mobility μ{sub eff} in the inversion layers of fully depleted double–gate silicon-on-insulator (SOI) metal–oxide–semiconductor (MOS) transistors on the density N{sub e} of induced charge carriers and temperature T are investigated at different states of the SOI film (inversion–accumulation) from the side of one of the gates. It is shown that at a high density of induced charge carriers of N{sub e} > 6 × 10{sup 12} cm{sup –2} the μeff(T) dependences allow the components of mobility μ{sub eff} that are related to scattering at surface phonons and from the film/insulator surface roughness to be distinguished. The μ{sub eff}(N{sub e}) dependences can be approximated by the power functions μ{sub eff}(N{sub e}) ∝ N{sub e}{sup −n}. The exponents n in the dependences and the dominant mechanisms of scattering of electrons induced near the interface between the SOI film and buried oxide are determined for different N{sub e} ranges and film states from the surface side.

75 FR 4583 - In the Matter of: Certain Electronic Devices, Including Mobile Phones, Portable Music Players...

Science.gov (United States)

2010-01-28

..., Including Mobile Phones, Portable Music Players, and Computers; Notice of Investigation AGENCY: U.S... music players, and computers, by reason of infringement of certain claims of U.S. Patent Nos. 6,714,091... importation of certain electronic devices, including mobile phones, portable music players, or computers that...

Weak coupling theory of the ripplon limited mobility of a 2-D electron lattice

International Nuclear Information System (INIS)

Dahm, A.J.; Mehrotra, R.

1981-01-01

The one ripplon-n phonon scattering contribution to the mobility of a 2D electron lattice supported by a liquid helium substrate is calculated in first order perturbation theory to all orders of n in the weak coupling limit. The Debye Waller factor is shown to limit the momentum transfer at large ripplon wave-vectors and high temperatures causing a minimum in the mobility as a function of temperature. (orig.)

Electron mobility in supercritical ethane as a function of density and temperature

International Nuclear Information System (INIS)

Nishikawa, M.; Holroyd, R.A.; Sowada, U.

1980-01-01

The electron mobility is reported for ethane as a function of density at various temperatures above T/sub c/. The high pressure cell used permits measurements to 200 atm. Our analysis shows that theory is consistent with the ethane mobility results at low and intermediate densities. At densities less than 1 x 10 21 molecules/cm 3 electrons are scattered by isolated ethane molecules and the Lorentz equation is valid. At intermediate densities, μ/sub e/ correlates with the square of the velocity of sound, indicating that in dense fluids the adiabatic compressibility must be included. The data are consistent with a modified Cohen--Lekner equation, and the minimum in μ/sub e/N observed at densities just below d/sub c/ is qualitatively accounted for by changes in the adiabatic compressibility. Thus the concept of quasilocalization, suggested by others to qualitatively explain such minima, is unnecessary here. At higher densities an additional, unspecified, scattering mechanism becomes important

Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures

International Nuclear Information System (INIS)

Egorov, A. Yu.; Gladyshev, A. G.; Nikitina, E. V.; Denisov, D. V.; Polyakov, N. K.; Pirogov, E. V.; Gorbazevich, A. A.

2010-01-01

Double pulse doped (δ-doped) InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) heterostructures were grown by molecular-beam epitaxy using a multiwafer technological system. The room-temperature electron mobility was determined by the Hall method as 6550 and 6000 cm 2 /(V s) at sheet electron densities of 3.00 x 10 12 and 3.36 x 10 12 cm -2 , respectively. HEMT heterostructures fabricated in a single process feature high uniformity of structural and electrical characteristics over the entire area of wafers 76.2 mm in diameter and high reproducibility of characteristics from process to process.

Theory of insulated gate field effect transistor with negative differential electron mobility

International Nuclear Information System (INIS)

Furman, A.S.

1995-09-01

We study the consequences of negative differential electron mobility in FETs using the field model and the gradual channel approximation. We find that the FET may show convective or absolute instability. The fluctuations growths is governed by diffusion law with negative effective diffusion coefficient. (author). 4 refs, 2 figs

Effect of field-dependent mobility on the escape probability. I. Electrons photoinjected in neopentane

International Nuclear Information System (INIS)

Mozumder, A.; Carmichael, I.

1978-01-01

A general procedure is described for calculating the escape probability of an electron against neutralization in the presence of an external field after it has been ejected into a dielectric liquid from a planar surface. The present paper utilizes the field-dependent electron mobility measurement in neopentane by Bakale and Schmidt. The calculated escape probability, upon averaging over the initial distribution, is compared with the current efficiency measurement of Holroyd et al. The median thermalization legnth, inferred from this comparison, depends in general upon the assumed form of initial distribution. It is less than the value obtained when the field dependence of the mobility is ignored but greater than that applicable to the high energy irradiation case. A plausible explanation is offered

Hybrid Circuit QED with Electrons on Helium

Science.gov (United States)

Yang, Ge

Electrons on helium (eHe) is a 2-dimensional system that forms naturally at the interface between superfluid helium and vacuum. It has the highest measured electron mobility, and long predicted spin coherence time. In this talk, we will first review various quantum computer architecture proposals that take advantage of these exceptional properties. In particular, we describe how electrons on helium can be combined with superconducting microwave circuits to take advantage of the recent progress in the field of circuit quantum electrodynamics (cQED). We will then demonstrate how to reliably trap electrons on these devices hours at a time, at millikelvin temperatures inside a dilution refrigerator. The coupling between the electrons and the microwave resonator exceeds 1 MHz, and can be reproduced from the design geometry using our numerical simulation. Finally, we will present our progress on isolating individual electrons in such circuits, to build single-electron quantum dots with electrons on helium.

76 FR 31983 - In the Matter of Certain Electronic Devices, Including Mobile Phones, Portable Music Players, and...

Science.gov (United States)

2011-06-02

... Devices, Including Mobile Phones, Portable Music Players, and Computers; Notice of Commission... States after importation of certain electronic devices, including mobile phones, portable music players... rendered asserted claim 5 invalid. The ALJ concluded that an industry exists within the United States that...

76 FR 40930 - In the Matter of Certain Electronic Devices, Including Mobile Phones, Portable Music Players, and...

Science.gov (United States)

2011-07-12

... Devices, Including Mobile Phones, Portable Music Players, and Computers; Notice of Commission....S.C. 1337) in the importation into the United States, the sale for importation, and the sale within the United States after importation of certain electronic devices, including mobile phones, portable...

High electron mobility and large magnetoresistance in the half-Heusler semimetal LuPtBi

KAUST Repository

Hou, Zhipeng; Wang, Wenhong; Xu, Guizhou; Zhang, Xiaoming; Wei, Zhiyang; Shen, Shipeng; Liu, Enke; Yao, Yuan; Chai, Yisheng; Sun, Young; Xi, Xuekui; Wang, Wenquan; Liu, Zhongyuan; Wu, Guangheng; Zhang, Xixiang

2015-01-01

Materials with high carrier mobility showing large magnetoresistance (MR) have recently received much attention because of potential applications in future high-performance magnetoelectric devices. Here, we report on an electron-hole

Quantum corrections to conductivity observed at intermediate magnetic fields in a high mobility GaAs/AlGaAs 2-dimensional electron gas

International Nuclear Information System (INIS)

Taboryski, R.; Veje, E.; Lindelof, P.E.

1990-01-01

Magnetoresistance with the field perpendicular to the 2-dimensional electron gas in a high mobility GaAs/AlGaAs heterostructure at low temperatures is studied. At the lowest magnetic field we observe the weak localization. At magnetic fields, where the product of the mobility and the magnetic field is of the order of unity, the quantum correction to conductivity due to the electron-electron interaction is as a source of magnetoresistance. A consistent analysis of experiments in this regime is for the first time performed. In addition to the well known electron-electron term with the expected temperature dependence, we find a new type of temperature independent quantum correction, which varies logarithmically with mobility. (orig.)

Kinase detection with gallium nitride based high electron mobility transistors.

Science.gov (United States)

Makowski, Matthew S; Bryan, Isaac; Sitar, Zlatko; Arellano, Consuelo; Xie, Jinqiao; Collazo, Ramon; Ivanisevic, Albena

2013-07-01

A label-free kinase detection system was fabricated by the adsorption of gold nanoparticles functionalized with kinase inhibitor onto AlGaN/GaN high electron mobility transistors (HEMTs). The HEMTs were operated near threshold voltage due to the greatest sensitivity in this operational region. The Au NP/HEMT biosensor system electrically detected 1 pM SRC kinase in ionic solutions. These results are pertinent to drug development applications associated with kinase sensing.

Density and temperature effects on electron mobilities in gaseous, critical and liquid n-hexane, cyclohexane, and cyclopentane

International Nuclear Information System (INIS)

Huang, S.S.-S.; Freeman, G.R.

1978-01-01

In the low density vapors the density normalized mobilities μn of thermal electrons decreased in the order n-hexane > cyclopentane > cyclohexane. Mobilities in the critical fluids were 16 cm 2 /V s in n-hexane, 23 in cyclohexane, and 22 in cyclopentane. Mobilities in the liquids were independent of field up to the highest value used, which was 1.5 Td in the hexanes and 0.9 Td in cyclopentane. The mobilities and their temperature dependences were interpreted in terms of a model

Mobility of charge carriers in electron-irradiated crystals of n-type Hg0.8Cd0.2Te

International Nuclear Information System (INIS)

Voitsekhovskii, A.V.; Kiryushkin, E.M.; Kokhanenko, A.P.; Kurbanov, K.R.; Lilenko, Yu.V.

1988-01-01

We present the results of an investigation of the behavior of the mobility of the charge carriers in Hg 1-x Cd x Te crystals with n-type conduction as a function of the dose of irradiation by electrons with an energy of 3.0 MeV at 300 K and the initial content of defects in the material. The complex character of the variation of the mobility of the electrons as a function of the dose observed when crystals of n-Hg 1-x Cd x Te (x ∼ 0.20) with different initial concentrations of defects are irradiated by fast electrons has been attributed to the influence of the factors of the shielding of the ionized scattering centers by electrons and the additional scattering of the charge carriers on the radiation defects. Good agreement between the experimental and calculated plots of the dependence of the mobility of electrons on the irradiation dose has been obtained with consideration of a model of the simultaneous introduction of donor (single charged) and acceptor (doubly charged) defects into a narrow-band semiconductor characterized by a degenerate and nonparabolic conduction band

Confinement time exceeding one second for a toroidal electron plasma.

Science.gov (United States)

Marler, J P; Stoneking, M R

2008-04-18

Nearly steady-state electron plasmas are trapped in a toroidal magnetic field for the first time. We report the first results from a new toroidal electron plasma experiment, the Lawrence Non-neutral Torus II, in which electron densities on the order of 10(7) cm(-3) are trapped in a 270-degree toroidal arc (670 G toroidal magnetic field) by application of trapping potentials to segments of a conducting shell. The total charge inferred from measurements of the frequency of the m=1 diocotron mode is observed to decay on a 3 s time scale, a time scale that approaches the predicted limit due to magnetic pumping transport. Three seconds represents approximately equal to 10(5) periods of the lowest frequency plasma mode, indicating that nearly steady-state conditions are achieved.

Enhancement of hole mobility in InSe monolayer via an InSe and black phosphorus heterostructure.

Science.gov (United States)

Ding, Yi-Min; Shi, Jun-Jie; Xia, Congxin; Zhang, Min; Du, Juan; Huang, Pu; Wu, Meng; Wang, Hui; Cen, Yu-Lang; Pan, Shu-Hang

2017-10-05

To enhance the low hole mobility (∼40 cm 2 V -1 s -1 ) of InSe monolayer, a novel two-dimensional (2D) van der Waals heterostructure made of InSe and black phosphorus (BP) monolayers with high hole mobility (∼10 3 cm 2 V -1 s -1 ) has been constructed and its structural and electronic properties are investigated using first-principles calculations. We find that the InSe/BP heterostructure exhibits a direct band gap of 1.39 eV and type-II band alignment with electrons (holes) located in the InSe (BP) layer. The band offsets of InSe and BP are 0.78 eV for the conduction band minimum and 0.86 eV for the valence band maximum, respectively. Surprisingly, the hole mobility in the InSe/BP heterostructure exceeds 10 4 cm 2 V -1 s -1 , which is one order of magnitude larger than the hole mobility of BP and three orders larger than that of the InSe monolayer. The electron mobility is also increased to 3 × 10 3 cm 2 V -1 s -1 . The physical reason has been analyzed deeply, and a universal method is proposed to improve the carrier mobility of 2D materials by forming heterostructures with them and other 2D materials with complementary properties. The InSe/BP heterostructure can thus be widely used in nanoscale InSe-based field-effect transistors, photodetectors and photovoltaic devices due to its type-II band alignment and high carrier mobility.

Calculation and analysis of the mobility and diffusion coefficient of thermal electrons in methane/air premixed flames

KAUST Repository

Bisetti, Fabrizio; El Morsli, Mbark

2012-01-01

Simulations of ion and electron transport in flames routinely adopt plasma fluid models, which require transport coefficients to compute the mass flux of charged species. In this work, the mobility and diffusion coefficient of thermal electrons

Development of mobile electronic health records application in a secondary general hospital in Korea.

Science.gov (United States)

Choi, Wookjin; Park, Min Ah; Hong, Eunseok; Kim, Sunhyu; Ahn, Ryeok; Hong, Jungseok; Song, Seungyeol; Kim, Tak; Kim, Jeongkeun; Yeo, Seongwoon

2013-12-01

The recent evolution of mobile devices has opened new possibilities of providing strongly integrated mobile services in healthcare. The objective of this paper is to describe the decision driver, development, and implementation of an integrated mobile Electronic Health Record (EHR) application at Ulsan University Hospital. This application helps healthcare providers view patients' medical records and information without a stationary computer workstation. We developed an integrated mobile application prototype that aimed to improve the mobility and usability of healthcare providers during their daily medical activities. The Android and iOS platform was used to create the mobile EHR application. The first working version was completed in 5 months and required 1,080 development hours. The mobile EHR application provides patient vital signs, patient data, text communication, and integrated EHR. The application allows our healthcare providers to know the status of patients within and outside the hospital environment. The application provides a consistent user environment on several compatible Android and iOS devices. A group of 10 beta testers has consistently used and maintained our copy of the application, suggesting user acceptance. We are developing the integrated mobile EHR application with the goals of implementing an environment that is user-friendly, implementing a patient-centered system, and increasing the hospital's competitiveness.

High mobility solution-processed hybrid light emitting transistors

International Nuclear Information System (INIS)

Walker, Bright; Kim, Jin Young; Ullah, Mujeeb; Burn, Paul L.; Namdas, Ebinazar B.; Chae, Gil Jo; Cho, Shinuk; Seo, Jung Hwa

2014-01-01

We report the design, fabrication, and characterization of high-performance, solution-processed hybrid (inorganic-organic) light emitting transistors (HLETs). The devices employ a high-mobility, solution-processed cadmium sulfide layer as the switching and transport layer, with a conjugated polymer Super Yellow as an emissive material in non-planar source/drain transistor geometry. We demonstrate HLETs with electron mobilities of up to 19.5 cm 2 /V s, current on/off ratios of >10 7 , and external quantum efficiency of 10 −2 % at 2100 cd/m 2 . These combined optical and electrical performance exceed those reported to date for HLETs. Furthermore, we provide full analysis of charge injection, charge transport, and recombination mechanism of the HLETs. The high brightness coupled with a high on/off ratio and low-cost solution processing makes this type of hybrid device attractive from a manufacturing perspective

Nonmonotonous electron mobility due to structurally induced resonant coupling of subband states in an asymmetric double quantum well

Directory of Open Access Journals (Sweden)

R. K. Nayak

2015-11-01

Full Text Available We show that sharp nonmonotic variation of low temperature electron mobility μ can be achieved in GaAs/AlxGa1-xAs barrier delta-doped double quantum well structure due to quantum mechanical transfer of subband electron wave functions within the wells. We vary the potential profile of the coupled structure as a function of the doping concentration in order to bring the subbands into resonance such that the subband energy levels anticross and the eigen states of the coupled structure equally share both the wells thereby giving rise to a dip in mobility. When the wells are of equal widths, the dip in mobility occurs under symmetric doping of the side barriers. In case of unequal well widths, the resonance can be obtained by suitable asymmetric variation of the doping concentrations. The dip in mobility becomes sharp and also the wavy nature of mobility takes a rectangular shape by increasing the barrier width. We show that the dip in mobility at resonance is governed by the interface roughness scattering through step like changes in the subband mobilities. It is also gratifying to show that the drop in mobility at the onset of occupation of second subband is substantially supressed through the quantum mechanical transfer of subband wave functions between the wells. Our results can be utilized for performance enhancement of coupled quantum well devices.

High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se

Science.gov (United States)

Wu, Jinxiong; Yuan, Hongtao; Meng, Mengmeng; Chen, Cheng; Sun, Yan; Chen, Zhuoyu; Dang, Wenhui; Tan, Congwei; Liu, Yujing; Yin, Jianbo; Zhou, Yubing; Huang, Shaoyun; Xu, H. Q.; Cui, Yi; Hwang, Harold Y.; Liu, Zhongfan; Chen, Yulin; Yan, Binghai; Peng, Hailin

2017-07-01

High-mobility semiconducting ultrathin films form the basis of modern electronics, and may lead to the scalable fabrication of highly performing devices. Because the ultrathin limit cannot be reached for traditional semiconductors, identifying new two-dimensional materials with both high carrier mobility and a large electronic bandgap is a pivotal goal of fundamental research. However, air-stable ultrathin semiconducting materials with superior performances remain elusive at present. Here, we report ultrathin films of non-encapsulated layered Bi2O2Se, grown by chemical vapour deposition, which demonstrate excellent air stability and high-mobility semiconducting behaviour. We observe bandgap values of ˜0.8 eV, which are strongly dependent on the film thickness due to quantum-confinement effects. An ultrahigh Hall mobility value of >20,000 cm2 V-1 s-1 is measured in as-grown Bi2O2Se nanoflakes at low temperatures. This value is comparable to what is observed in graphene grown by chemical vapour deposition and at the LaAlO3-SrTiO3 interface, making the detection of Shubnikov-de Haas quantum oscillations possible. Top-gated field-effect transistors based on Bi2O2Se crystals down to the bilayer limit exhibit high Hall mobility values (up to 450 cm2 V-1 s-1), large current on/off ratios (>106) and near-ideal subthreshold swing values (˜65 mV dec-1) at room temperature. Our results make Bi2O2Se a promising candidate for future high-speed and low-power electronic applications.

Ab-initio Study of the Electron Mobility in a Functionalized UiO-66 Metal Organic Framework

Science.gov (United States)

Musho, Terence D.; Yasin, Alhassan S.

2018-03-01

This study leverages density functional theory accompanied with Boltzmann transport equation approaches to investigate the electronic mobility as a function of inorganic substitution and functionalization in a thermally stable UiO-66 metal-organic framework (MOF). The MOFs investigated are based on Zr-UiO-66 MOF with three functionalization groups of benzene dicarboxylate (BDC), BDC functionalized with an amino group (BDC + NH_2 ) and a nitro group (BDC + NO_2 ). The design space of this study is bound by UiO-66(M)-R, [M=Zr , Ti, Hf; R=BDC , BDC+NO_2 , BDC+NH_2 ]. The elastic modulus was not found to vary significantly over the structural modification of the design space for either functionalization or inorganic substitution. However, the electron-phonon scattering potential was found to be controllable by up to 30% through controlled inorganic substitution in the metal clusters of the MOF structure. The highest electron mobility was predicted for a UiO-66(Hf_5Zr_1 ) achieving a value of approximately 1.4× 10^{-3} cm^2 /V s. It was determined that functionalization provides a controlled method of modulating the charge density, while inorganic substitution provides a controlled method of modulating the electronic mobility. Within the proposed design space the electrical conductivity was able to be increased by approximately three times the base conductivity through a combination of inorganic substitution and functionalization.

The Costs of Web Advertisements while Mobile Browsing

NARCIS (Netherlands)

van den Brande, Jeffrey; Pras, Aiko

Tablet PCs, iPads and mobile phones all include facilities to browse the mobile Internet. The costs of mobile Internet access may become extraordinary, however, when the data limit is exceeded or when the user is roaming abroad without a roaming data plan. Since users may see advertisements as

Local imaging of high mobility two-dimensional electron systems with virtual scanning tunneling microscopy

Energy Technology Data Exchange (ETDEWEB)

Pelliccione, M. [Department of Applied Physics, Stanford University, 348 Via Pueblo Mall, Stanford, California 94305 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Department of Physics, University of California, Santa Barbara, Santa Barbara, California 93106 (United States); Bartel, J.; Goldhaber-Gordon, D. [Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Department of Physics, Stanford University, 382 Via Pueblo Mall, Stanford, California 94305 (United States); Sciambi, A. [Department of Applied Physics, Stanford University, 348 Via Pueblo Mall, Stanford, California 94305 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Pfeiffer, L. N.; West, K. W. [Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544 (United States)

2014-11-03

Correlated electron states in high mobility two-dimensional electron systems (2DESs), including charge density waves and microemulsion phases intermediate between a Fermi liquid and Wigner crystal, are predicted to exhibit complex local charge order. Existing experimental studies, however, have mainly probed these systems at micron to millimeter scales rather than directly mapping spatial organization. Scanning probes should be well-suited to study the spatial structure of these states, but high mobility 2DESs are found at buried semiconductor interfaces, beyond the reach of conventional scanning tunneling microscopy. Scanning techniques based on electrostatic coupling to the 2DES deliver important insights, but generally with resolution limited by the depth of the 2DES. In this letter, we present our progress in developing a technique called “virtual scanning tunneling microscopy” that allows local tunneling into a high mobility 2DES. Using a specially designed bilayer GaAs/AlGaAs heterostructure where the tunnel coupling between two separate 2DESs is tunable via electrostatic gating, combined with a scanning gate, we show that the local tunneling can be controlled with sub-250 nm resolution.

Modelling of snow exceedances

Science.gov (United States)

Jordanova, Pavlina K.; Sadovský, Zoltán; Stehlík, Milan

2017-07-01

Modelling of snow exceedances is of great importance and interest for ecology, civil engineering and general public. We suggest the favorable fit for exceedances related to the exceptional snow loads from Slovakia, assuming that the data is driven by Generalised Pareto Distribution or Generalized Extreme Value Distribution. Further, the statistical dependence between the maximal snow loads and the corresponding altitudes is studied.

Molecular gated-AlGaN/GaN high electron mobility transistor for pH detection.

Science.gov (United States)

Ding, Xiangzhen; Yang, Shuai; Miao, Bin; Gu, Le; Gu, Zhiqi; Zhang, Jian; Wu, Baojun; Wang, Hong; Wu, Dongmin; Li, Jiadong

2018-04-18

A molecular gated-AlGaN/GaN high electron mobility transistor has been developed for pH detection. The sensing surface of the sensor was modified with 3-aminopropyltriethoxysilane to provide amphoteric amine groups, which would play the role of receptors for pH detection. On modification with 3-aminopropyltriethoxysilane, the transistor exhibits good chemical stability in hydrochloric acid solution and is sensitive for pH detection. Thus, our molecular gated-AlGaN/GaN high electron mobility transistor acheived good electrical performances such as chemical stability (remained stable in hydrochloric acid solution), good sensitivity (37.17 μA/pH) and low hysteresis. The results indicate a promising future for high-quality sensors for pH detection.

Integration of a mobile-integrated therapy with electronic health records: lessons learned.

Science.gov (United States)

Peeples, Malinda M; Iyer, Anand K; Cohen, Joshua L

2013-05-01

Responses to the chronic disease epidemic have predominantly been standardized in their approach to date. Barriers to better health outcomes remain, and effective management requires patient-specific data and disease state knowledge be presented in methods that foster clinical decision-making and patient self-management. Mobile technology provides a new platform for data collection and patient-provider communication. The mobile device represents a personalized platform that is available to the patient on a 24/7 basis. Mobile-integrated therapy (MIT) is the convergence of mobile technology, clinical and behavioral science, and scientifically validated clinical outcomes. In this article, we highlight the lessons learned from functional integration of a Food and Drug Administration-cleared type 2 diabetes MIT into the electronic health record (EHR) of a multiphysician practice within a large, urban, academic medical center. In-depth interviews were conducted with integration stakeholder groups: mobile and EHR software and information technology teams, clinical end users, project managers, and business analysts. Interviews were summarized and categorized into lessons learned using the Architecture for Integrated Mobility® framework. Findings from the diverse stakeholder group of a MIT-EHR integration project indicate that user workflow, software system persistence, environment configuration, device connectivity and security, organizational processes, and data exchange heuristics are key issues that must be addressed. Mobile-integrated therapy that integrates patient self-management data with medical record data provides the opportunity to understand the potential benefits of bidirectional data sharing and reporting that are most valuable in advancing better health and better care in a cost-effective way that is scalable for all chronic diseases. © 2013 Diabetes Technology Society.

Electronic white cane with GPS radar-based concept as blind mobility enhancement without distance limitation

Science.gov (United States)

Halim, Suharsono; Handafiah, Finna; Aprilliyani, Ria; Udhiarto, Arief

2018-02-01

The Indonesian Ministry of Social Affairs, in July 2012, informed that the number of blind in Indonesia has been the largest among to the people with other disabilities. The most common tools utilized to help the blind was a conventional cane which has limited features and therefore it was difficult to be used as a mobilization tools. Moreover, the conventional cane cannot assist them or their family when the blind gets lost. In this research, we designed and implemented an electronic white cane with the concept of radar and global positioning system (GPS). The purpose of this research was to design and develop an electronic white cane which can enhance the mobility of the blind without distance coverage limitation. Utilizing ultrasonic sensors as a distance measurement and a servo motor as an actuator, the produced radar system is able to map an area with maximum distance and coverage angle of 5 meters and 180° respectively. The blind senses the obstacle around them from the vibration generated by five vibration motors. The vibration becomes more intense when the obstacle is detected closer. In addition, we implemented a GPS to monitor the blind's position and allow their family to find them easily when the blind need a help. Based on the tests performed, we have successfully developed an electronic white cane that can be a solution to improve the blind's mobility.

Study on payments through mobile phones

Directory of Open Access Journals (Sweden)

Anca Ioana ANDREESCU

2006-01-01

Full Text Available The evolution of information and communications technology, together with the increasing use of electronic commerce, phones and mobile applications, have facilitated mobile payments to become an alternative payment method for buyers and vendors. Mobile payments offer various opportunities to business environment and became a starting point in the transition from electronic to mobile. This paper aims to analyze the present situation of the mobile payment methods and to identify the effects that mobile payment systems have on electronic commerce.

Analysis of Proton Radiation Effects on Gallium Nitride High Electron Mobility Transistors

Science.gov (United States)

2017-03-01

non - ionizing proton radiation damage effects at different energy levels on a GaN-on-silicon high electron mobility transistor...DISTRIBUTION CODE 13. ABSTRACT (maximum 200 words) In this work, a physics-based simulation of non - ionizing proton radiation damage effects at different...Polarization . . . . . . . . . . . . . . 6 2.3 Non - Ionizing Radiation Damage Effects . . . . . . . . . . . . . . . 10 2.4 Non - Ionizing Radiation Damage in

N-polar GaN epitaxy and high electron mobility transistors

International Nuclear Information System (INIS)

Wong, Man Hoi; Keller, Stacia; Dasgupta, Nidhi Sansaptak; Denninghoff, Daniel J; Kolluri, Seshadri; Brown, David F; Lu, Jing; Fichtenbaum, Nicholas A; Ahmadi, Elaheh; DenBaars, Steven P; Speck, James S; Mishra, Umesh K; Singisetti, Uttam; Chini, Alessandro; Rajan, Siddharth

2013-01-01

This paper reviews the progress of N-polar (0001-bar) GaN high frequency electronics that aims at addressing the device scaling challenges faced by GaN high electron mobility transistors (HEMTs) for radio-frequency and mixed-signal applications. Device quality (Al, In, Ga)N materials for N-polar heterostructures are developed using molecular beam epitaxy and metalorganic chemical vapor deposition. The principles of polarization engineering for designing N-polar HEMT structures will be outlined. The performance, scaling behavior and challenges of microwave power devices as well as highly-scaled depletion- and enhancement-mode devices employing advanced technologies including self-aligned processes, n+ (In,Ga)N ohmic contact regrowth and high aspect ratio T-gates will be discussed. Recent research results on integrating N-polar GaN with Si for prospective novel applications will also be summarized. (invited review)

High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Kyle, Erin C. H., E-mail: erinkyle@umail.ucsb.edu; Kaun, Stephen W.; Burke, Peter G.; Wu, Feng; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wu, Yuh-Renn [Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, Taipei City 10617, Taiwan (China)

2014-05-21

The dependence of electron mobility on growth conditions and threading dislocation density (TDD) was studied for n{sup −}-GaN layers grown by ammonia-based molecular beam epitaxy. Electron mobility was found to strongly depend on TDD, growth temperature, and Si-doping concentration. Temperature-dependent Hall data were fit to established transport and charge-balance equations. Dislocation scattering was analyzed over a wide range of TDDs (∼2 × 10{sup 6} cm{sup −2} to ∼2 × 10{sup 10} cm{sup −2}) on GaN films grown under similar conditions. A correlation between TDD and fitted acceptor states was observed, corresponding to an acceptor state for almost every c lattice translation along each threading dislocation. Optimized GaN growth on free-standing GaN templates with a low TDD (∼2 × 10{sup 6} cm{sup −2}) resulted in electron mobilities of 1265 cm{sup 2}/Vs at 296 K and 3327 cm{sup 2}/Vs at 113 K.

Suppressed carrier density for the patterned high mobility two-dimensional electron gas at γ-Al2O3/SrTiO3 heterointerfaces

DEFF Research Database (Denmark)

Niu, Wei; Gan, Yulin; Christensen, Dennis Valbjørn

2017-01-01

The two-dimensional electron gas (2DEG) at the non-isostructural interface between spinel γ-Al2O3 and perovskite SrTiO3 is featured by a record electron mobility among complex oxide interfaces in addition to a high carrier density up to the order of 1015 cm-2. Herein, we report on the patterning...... is found to be approximately 3×1013 cm-2, much lower than that of the unpatterned sample (~1015 cm-2). Remarkably, a high electron mobility of approximately 3,600 cm2V-1s-1 was obtained at low temperatures for the patterned 2DEG at a carrier density of ~ 7×1012 cm-2, which exhibits clear Shubnikov-de Hass...... quantum oscillations. The patterned high-mobility 2DEG at the γ-Al2O3/SrTiO3 interface paves the way for the design and application of spinel/perovskite interfaces for high-mobility all-oxide electronic devic...

Solution-processable ambipolar diketopyrrolopyrrole-selenophene polymer with unprecedentedly high hole and electron mobilities.

Science.gov (United States)

Lee, Junghoon; Han, A-Reum; Kim, Jonggi; Kim, Yiho; Oh, Joon Hak; Yang, Changduk

2012-12-26

There is a fast-growing demand for polymer-based ambipolar thin-film transistors (TFTs), in which both n-type and p-type transistor operations are realized in a single layer, while maintaining simplicity in processing. Research progress toward this end is essentially fueled by molecular engineering of the conjugated backbones of the polymers and the development of process architectures for device fabrication, which has recently led to hole and electron mobilities of more than 1.0 cm(2) V(-1) s(-1). However, ambipolar polymers with even higher performance are still required. By taking into account both the conjugated backbone and side chains of the polymer component, we have developed a dithienyl-diketopyrrolopyrrole (TDPP) and selenophene containing polymer with hybrid siloxane-solubilizing groups (PTDPPSe-Si). A synergistic combination of rational polymer backbone design, side-chain dynamics, and solution processing affords an enormous boost in ambipolar TFT performance, resulting in unprecedentedly high hole and electron mobilities of 3.97 and 2.20 cm(2) V(-1) s(-1), respectively.

77 FR 20847 - Certain Mobile Electronic Devices Incorporating Haptics; Institution of Investigation Pursuant to...

Science.gov (United States)

2012-04-06

... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-834] Certain Mobile Electronic Devices Incorporating Haptics; Institution of Investigation Pursuant to 19 U.S.C. 1337 AGENCY: U.S. International Trade.... International Trade Commission on February 7, 2012, and an amended complaint was filed with the U.S...

Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

International Nuclear Information System (INIS)

Dabiran, A. M.; Wowchak, A. M.; Osinsky, A.; Xie, J.; Hertog, B.; Cui, B.; Chow, P. P.; Look, D. C.

2008-01-01

Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of electron mobility (>1800 cm 2 /V s) and sheet charge density (>3x10 13 cm -2 ), were grown by rf plasma-assisted molecular beam epitaxy (MBE) on sapphire and SiC, resulting in sheet resistivity values down to ∼100 Ω/□ at room temperature. Fabricated 1.2 μm gate devices showed excellent current-voltage characteristics, including a zero gate saturation current density of ∼1.3 A/mm and a peak transconductance of ∼260 mS/mm. Here, an all MBE growth of optimized AlN/GaN HEMT structures plus the results of thin-film characterizations and device measurements are presented

Electronic Patient Reported Outcomes in Paediatric Oncology - Applying Mobile and Near Field Communication Technology.

Science.gov (United States)

Duregger, Katharina; Hayn, Dieter; Nitzlnader, Michael; Kropf, Martin; Falgenhauer, Markus; Ladenstein, Ruth; Schreier, Günter

2016-01-01

Electronic Patient Reported Outcomes (ePRO) gathered using telemonitoring solutions might be a valuable source of information in rare cancer research. The objective of this paper was to develop a concept and implement a prototype for introducing ePRO into the existing neuroblastoma research network by applying Near Field Communication and mobile technology. For physicians, an application was developed for registering patients within the research network and providing patients with an ID card and a PIN for authentication when transmitting telemonitoring data to the Electronic Data Capture system OpenClinica. For patients, a previously developed telemonitoring system was extended by a Simple Object Access Protocol (SOAP) interface for transmitting nine different health parameters and toxicities. The concept was fully implemented on the front-end side. The developed application for physicians was prototypically implemented and the mobile application of the telemonitoring system was successfully connected to OpenClinica. Future work will focus on the implementation of the back-end features.

White dwarf stars exceeding the Chandrasekhar mass limit

Science.gov (United States)

Tomaschitz, Roman

2018-01-01

The effect of nonlinear ultra-relativistic electron dispersion on the mass-radius relation of high-mass white dwarfs is studied. The dispersion is described by a permeability tensor in the Dirac equation, generated by the ionized high-density stellar matter, which constitutes the neutralizing background of the nearly degenerate electron plasma. The electron dispersion results in a stable mass-radius relation for high-mass white dwarfs, in contrast to a mass limit in the case of vacuum permeabilities. In the ultra-relativistic regime, the dispersion relation is a power law whose amplitude and scaling exponent is inferred from mass and radius estimates of two high-mass white dwarfs, Sirius B and LHS 4033. Evidence for the existence of super-Chandrasekhar mass white dwarfs is provided by several Type Ia supernovae (e.g., SN 2013cv, SN 2003fg, SN 2007if and SN 2009dc), whose mass ejecta exceed the Chandrasekhar limit by up to a factor of two. The dispersive mass-radius relation is used to estimate the radii, central densities, Fermi temperatures, bulk and compression moduli and sound velocities of their white dwarf progenitors.

Quasifree electron mobility by the method of partial waves in liquid hydrocarbons and in fluid argon

International Nuclear Information System (INIS)

Vertes, A.

1983-01-01

Applicability of the fluctuation model was tested in the case of n-hexane, n-pentane, c-hexane, 2,2-dimethylbutane, 2,2,4,4-tetramethylpentane, iso-octane, and neopentane. In our model, the quasifree electrons have been assumed to be scattered by the conduction state energy fluctuations of the liquid. These fluctuations are, in turn, described as a consequence of density fluctuations. The scattering potential is supposed to be square well like and the cross section is calculated in terms of partial waves. Averages due to the density fluctuations and the electron kinetic energy distribution are determined numerically. Except for the first three materials, the calculation reproduced the experimental mobilities with reasonable values of the square well radius, which is the only fitting parameters. Further extension of the description concerning the density dependence of the low field mobility of fluid argon has been performed. The estimated fluctuation size as a function of density increases monotonically at the minimum of the mobility in accordance with the monotonic behavior of the isothermal compressibility in the same region

A Mobile Nanoscience and Electron Microscopy Outreach Program

Science.gov (United States)

Coffey, Tonya; Kelley, Kyle

2013-03-01

We have established a mobile nanoscience laboratory outreach program in Western NC that puts scanning electron microscopy (SEM) directly in the hands of K-12 students and the general public. There has been a recent push to develop new active learning materials to educate students at all levels about nanoscience and nanotechnology. Previous projects, such as Bugscope, nanoManipulator, or SPM Live! allowed remote access to advanced microscopies. However, placing SEM directly in schools has not often been possible because the cost and steep learning curve of these technologies were prohibitive, making this project quite novel. We have developed new learning modules for a microscopy outreach experience with a tabletop SEM (Hitachi TM3000). We present here an overview of our outreach and results of the assessment of our program to date.

Effects of SiNx on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mobility transistors

International Nuclear Information System (INIS)

Fan, Ren; Zhi-Biao, Hao; Lei, Wang; Lai, Wang; Hong-Tao, Li; Yi, Luo

2010-01-01

SiN x is commonly used as a passivation material for AlGaN/GaN high electron mobility transistors (HEMTs). In this paper, the effects of SiN x passivation film on both two-dimensional electron gas characteristics and current collapse of AlGaN/GaN HEMTs are investigated. The SiN x films are deposited by high- and low-frequency plasma-enhanced chemical vapour deposition, and they display different strains on the AlGaN/GaN heterostructure, which can explain the experiment results. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Social influence model and electronic word of mouth: PC versus mobile internet

OpenAIRE

Okazaki, Shintaro

2009-01-01

Compared with laptop or desktop computers, mobile devices offer greater flexibility in time and space, thus enabling consumers to be connected online more continually. In addition, their small size, portability and ease of use with location-based capabilities facilitate sending and receiving timely information in the right place. Drawing upon a social influence model proposed by Dholakia et al. (2004), this paper proposes a causal model for consumer participation in electronic ...

78 FR 63492 - Certain Electronic Devices, Including Mobile Phones and Tablet Computers, and Components Thereof...

Science.gov (United States)

2013-10-24

... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-847] Certain Electronic Devices, Including Mobile Phones and Tablet Computers, and Components Thereof; Notice of Request for Statements on the Public Interest AGENCY: U.S. International Trade Commission. ACTION: Notice. SUMMARY: Notice is...

Botulinum toxin detection using AlGaN /GaN high electron mobility transistors

Science.gov (United States)

Wang, Yu-Lin; Chu, B. H.; Chen, K. H.; Chang, C. Y.; Lele, T. P.; Tseng, Y.; Pearton, S. J.; Ramage, J.; Hooten, D.; Dabiran, A.; Chow, P. P.; Ren, F.

2008-12-01

Antibody-functionalized, Au-gated AlGaN /GaN high electron mobility transistors (HEMTs) were used to detect botulinum toxin. The antibody was anchored to the gate area through immobilized thioglycolic acid. The AlGaN /GaN HEMT drain-source current showed a rapid response of less than 5s when the target toxin in a buffer was added to the antibody-immobilized surface. We could detect a range of concentrations from 1to10ng/ml. These results clearly demonstrate the promise of field-deployable electronic biological sensors based on AlGaN /GaN HEMTs for botulinum toxin detection.

Electron Mobilities and Effective Masses in InGaAs/InAlAs HEMT Structures with High In Content

Science.gov (United States)

Yuzeeva, N. A.; Sorokoumova, A. V.; Lunin, R. A.; Oveshnikov, L. N.; Galiev, G. B.; Klimov, E. A.; Lavruchin, D. V.; Kulbachinskii, V. A.

2016-12-01

InxGa_{1-{x}}As/InyAl_{1-{y}}As HEMT structures {δ}-doped by Si were grown by molecular beam epitaxy on InP substrate. We investigated the influence of the In content on the electron mobilities and effective masses in dimensionally quantized subbands. The electron effective masses were determined by the temperature dependence of the amplitude of the Shubnikov-de Haas effect at 1.6 and 4.2 K. We found that the more the In content in quantum well (QW), the less the electron effective masses. The mobilities are higher in HEMT structures with wider and deeper QW. The energy band diagrams were calculated by using Vegard's law for basic parameters. The calculated band diagrams are in a good agreement with the experimental data of photoluminescence spectra.

Comparison between experiment and MCNP simulation for retrospective dosimetry according to the geometry of exposure using electronic components in a mobile phone

International Nuclear Information System (INIS)

Kim, Min Chae; Kim, Hyoungtaek; Lee, Seung Kyu; Chang, Insu; Lee, Jungil; Kim, Jang-Lyul; Kim, Bong-Hwan; Kim, Chan Hyeong

2017-01-01

Many efforts are carrying out for the use of thermoluminescence (TL) and optically stimulated luminescence (OSL) of personal electronic devices (such as mobile phone, USB memory chip etc.) as fortuitous dosimeters in the case of radiation emergency. A correction is required when evaluating the exposure dose to the body using the measured dose to the devices. As a starting point of this purpose, we have studied to evaluate the effects of the position of the electronic device on human body to measure the dose to the electronic device (mobile phone). We evaluated the doses to the mobile phone by using Monte Carlo N-Particle (MCNP) simulations and TL method with resistors and inductors in the mobile phone, and the results were then compared. We have studied to evaluate the effects of the position of mobile phone on human body to measure the dose to the phone with TL method and MCNP simulation method, and then compared. The results obtained by the TL experiments showed excellent agreement with the simulation results. With these results, it is expected that the retrospective estimation of the exposure dose to human body is possible by using the dose to mobile phone measured by TL analysis of resistors and inductors in phone.

Increasing patient mobility through an individualized goal-centered hospital mobility program: A quasi-experimental quality improvement project.

Science.gov (United States)

Klein, Lisa M; Young, Daniel; Feng, Du; Lavezza, Annette; Hiser, Stephanie; Daley, Kelly N; Hoyer, Erik H

2018-02-27

Hospital-acquired functional decline due to decreased mobility has negative impacts on patient outcomes. Current nurse-directed mobility programs lack a standardized approach to set achievable mobility goals. We aimed to describe implementation and outcomes from a nurse-directed patient mobility program. The quality improvement mobility program on the project unit was compared to a similar control unit providing usual care. The Johns Hopkins Mobility Goal Calculator was created to guide a daily patient mobility goal based on the level of mobility impairment. On the project unit, patient mobility increased from 5.2 to 5.8 on the Johns Hopkins Highest Level of Mobility score, mobility goal attainment went from 54.2% to 64.2%, and patients exceeding the goal went from 23.3% to 33.5%. All results were significantly higher than the control unit. An individualized, nurse-directed, patient mobility program using daily mobility goals is a successful strategy to improve daily patient mobility in the hospital. Copyright © 2018 Elsevier Inc. All rights reserved.

Quantum discord and classical correlation signatures of mobility edges in one-dimensional aperiodic single-electron systems

International Nuclear Information System (INIS)

Gong, Longyan; Zhu, Hao; Zhao, Shengmei; Cheng, Weiwen; Sheng, Yubo

2012-01-01

We investigate numerically the quantum discord and the classical correlation in a one-dimensional slowly varying potential model and a one-dimensional Soukoulis–Economou ones, respectively. There are well-defined mobility edges in the slowly varying potential model, while there are discrepancies on mobility edges in the Soukoulis–Economou ones. In the slowly varying potential model, we find that extended and localized states can be distinguished by both the quantum discord and the classical correlation. There are sharp transitions in the quantum discord and the classical correlation at mobility edges. Based on these, we study “mobility edges” in the Soukoulis–Economou model using the quantum discord and the classical correlation, which gives another perspectives for these “mobility edges”. All these provide us good quantities, i.e., the quantum discord and the classical correlation, to reflect mobility edges in these one-dimensional aperiodic single-electron systems. Moreover, our studies propose a consistent interpretation of the discrepancies between previous numerical results about the Soukoulis–Economou model. -- Highlights: ► Quantum discord and classical correlation can signal mobility edges in two models. ► An interpretation for mobility edges in the Soukoulis–Economou model is proposed. ► Quantum discord and classical correlation can reflect well localization properties.

Determination of the band alignment of a-IGZO/a-IGMO heterojunction for high-electron mobility transistor application

Energy Technology Data Exchange (ETDEWEB)

Zhang, Yi-Yu; Qian, Ling-Xuan; Liu, Xing-Zhao [School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu (China); State Key Laboratory of Electronic Thin Films and Integrated Devices, Chengdu (China)

2017-10-15

In the past decade, amorphous InGaZnO thin film transistors (a-IGZO TFTs) have become a very promising candidate for application in flat panel displays (FPDs). However, it is difficult to break through the mobility bottleneck of a-IGZO TFTs to obtain mobilities higher than 100 cm{sup 2} V{sup -1} s{sup -1}, thus limiting their use in more advanced applications. Construction of a high-electron mobility transistor (HEMT) based on a heterojunction structure could provide a solution for this problem. In this work, the band alignment of a-IGZO and amorphous InGaMgO (a-IGMO) heterojunction has been investigated using X-ray photoelectron spectroscopy (XPS) and transmission spectra measurements. The valence band (ΔE{sub V}) and conduction band offsets (ΔE{sub C}) were determined as 0.09 and 0.83 eV, respectively. The ΔE{sub C} was large enough to construct a potential well that could favor the appearance of a two-dimensional electron gas (2DEG). Hence, the achievement of an HEMT based on a-IGZO/a-IGMO heterojunction can be expected. Moreover, band bending contributed greatly to such a large ΔE{sub C}, and thus to the formation of electrical confinement structure. Our findings suggest that a-IGZO/a-IGMO heterojunction is a potential candidate for constructing a HEMT and thus breaking through the mobility bottleneck of a-IGZO-based TFTs for the applications in next-generation electronic products. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Determination of the band alignment of a-IGZO/a-IGMO heterojunction for high-electron mobility transistor application

International Nuclear Information System (INIS)

Zhang, Yi-Yu; Qian, Ling-Xuan; Liu, Xing-Zhao

2017-01-01

In the past decade, amorphous InGaZnO thin film transistors (a-IGZO TFTs) have become a very promising candidate for application in flat panel displays (FPDs). However, it is difficult to break through the mobility bottleneck of a-IGZO TFTs to obtain mobilities higher than 100 cm"2 V"-"1 s"-"1, thus limiting their use in more advanced applications. Construction of a high-electron mobility transistor (HEMT) based on a heterojunction structure could provide a solution for this problem. In this work, the band alignment of a-IGZO and amorphous InGaMgO (a-IGMO) heterojunction has been investigated using X-ray photoelectron spectroscopy (XPS) and transmission spectra measurements. The valence band (ΔE_V) and conduction band offsets (ΔE_C) were determined as 0.09 and 0.83 eV, respectively. The ΔE_C was large enough to construct a potential well that could favor the appearance of a two-dimensional electron gas (2DEG). Hence, the achievement of an HEMT based on a-IGZO/a-IGMO heterojunction can be expected. Moreover, band bending contributed greatly to such a large ΔE_C, and thus to the formation of electrical confinement structure. Our findings suggest that a-IGZO/a-IGMO heterojunction is a potential candidate for constructing a HEMT and thus breaking through the mobility bottleneck of a-IGZO-based TFTs for the applications in next-generation electronic products. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Role of dislocations and carrier concentration in limiting the electron mobility of InN films grown by plasma assisted molecular beam epitaxy

Science.gov (United States)

Tangi, Malleswararao; De, Arpan; Shivaprasad, S. M.

2018-01-01

We report the molecular beam epitaxy growth of device quality InN films on GaN epilayer and nano-wall network (NWN) templates deposited on c-sapphire by varying the film thickness up to 1 μm. The careful experiments are directed towards obtaining high mobility InN layers having a low band gap with improved crystal quality. The dislocation density is quantified by using high resolution X-ray diffraction rocking curve broadening values of symmetric and asymmetric reflections, respectively. We observe that the dislocation density of the InN films grown on GaN NWN is less than that of the films grown on the GaN epilayer. This is attributed to the nanoepitaxial lateral overlayer growth (ELOG) process, where the presence of voids at the interface of InN/GaN NWN prevents the propagation of dislocation lines into the InN epilayers, thereby causing less defects in the overgrown InN films. Thus, this new adaptation of the nano-ELOG growth process enables us to prepare InN layers with high electron mobility. The obtained electron mobility of 2121 cm2/Vs for 1 μm thick InN/GaN NWN is comparable with the literature values of similar thickness InN films. Furthermore, in order to understand the reasons that limit electron mobility, the charge neutrality condition is employed to study the variation of electron mobility as a function of dislocation density and carrier concentration. Overall, this study provides a route to attaining improved crystal quality and electronic properties of InN films.

Doping dependence and anisotropy of minority electron mobility in molecular beam epitaxy-grown p type GaInP

Energy Technology Data Exchange (ETDEWEB)

Haegel, N. M.; Christian, T.; Norman, A. G.; Mascarenhas, A. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Scandrett, C. [Naval Postgraduate School, Monterey, California 93943 (United States); Misra, Pranob; Liu, Ting; Sukiasyan, Arsen; Pickett, Evan; Yuen, Homan [Solar Junction, Inc., San Jose, California 95131 (United States)

2014-11-17

Direct imaging of minority electron transport via the spatially resolved recombination luminescence signature has been used to determine carrier diffusion lengths in GaInP as a function of doping. Minority electron mobility values are determined by performing time resolved photoluminescence measurements of carrier lifetime on the same samples. Values at 300 K vary from ∼2000 to 400 cm{sup 2}/V s and decrease with increasing doping. Anisotropic diffusion lengths and strongly polarized photoluminescence are observed, resulting from lateral composition modulation along the [110] direction. We report anisotropic mobility values associated with carrier transport parallel and perpendicular to the modulation direction.

Emerging technologies to power next generation mobile electronic devices using solar energy

Institute of Scientific and Technical Information of China (English)

Dewei JIA; Yubo DUAN; Jing LIU

2009-01-01

Mobile electronic devices such as MP3, mobile phones, and wearable or implanted medical devices have already or will soon become a necessity in peoples' lives.However, the further development of these devices is restricted not only by the inconvenient charging process of the power module, but also by the soaring prices of fossil fuel and its downstream chain of electricity manipulation.In view of the huge amount of solar energy fueling the world biochemically and thermally, a carry-on electricity harvester embedded in portable devices is emerging as a most noteworthy research area and engineering practice for a cost efficient solution. Such a parasitic problem is intrinsic in the next generation portable devices. This paper is dedicated to presenting an overview of the photovoltaic strategy in the chain as a reference for researchers and practitioners committed to solving the problem.

Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution.

Science.gov (United States)

Faber, Hendrik; Das, Satyajit; Lin, Yen-Hung; Pliatsikas, Nikos; Zhao, Kui; Kehagias, Thomas; Dimitrakopulos, George; Amassian, Aram; Patsalas, Panos A; Anthopoulos, Thomas D

2017-03-01

Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. However, further advancement of the technology is hindered by limitations associated with the extrinsic electron transport properties of the often defect-prone oxides. We overcome this limitation by replacing the single-layer semiconductor channel with a low-dimensional, solution-grown In 2 O 3 /ZnO heterojunction. We find that In 2 O 3 /ZnO transistors exhibit band-like electron transport, with mobility values significantly higher than single-layer In 2 O 3 and ZnO devices by a factor of 2 to 100. This marked improvement is shown to originate from the presence of free electrons confined on the plane of the atomically sharp heterointerface induced by the large conduction band offset between In 2 O 3 and ZnO. Our finding underscores engineering of solution-grown metal oxide heterointerfaces as an alternative strategy to thin-film transistor development and has the potential for widespread technological applications.

Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution

KAUST Repository

Faber, Hendrik

2017-04-28

Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. However, further advancement of the technology is hindered by limitations associated with the extrinsic electron transport properties of the often defect-prone oxides. We overcome this limitation by replacing the single-layer semiconductor channel with a low-dimensional, solution-grown In2O3/ZnO heterojunction. We find that In2O3/ZnO transistors exhibit band-like electron transport, with mobility values significantly higher than single-layer In2O3 and ZnO devices by a factor of 2 to 100. This marked improvement is shown to originate from the presence of free electrons confined on the plane of the atomically sharp heterointerface induced by the large conduction band offset between In2O3 and ZnO. Our finding underscores engineering of solution-grown metal oxide heterointerfaces as an alternative strategy to thin-film transistor development and has the potential for widespread technological applications.

Electronic characteristics of p-type transparent SnO monolayer with high carrier mobility

International Nuclear Information System (INIS)

Du, Juan; Xia, Congxin; Liu, Yaming; Li, Xueping; Peng, Yuting; Wei, Shuyi

2017-01-01

Graphical abstract: SnO monolayer is a p-type transparent semiconducting oxide with high hole mobility (∼641 cm 2 V −1 s −1 ), which is much higher than that of MoS 2 monolayer, which indicate that it can be a promising candidate for high-performance nanoelectronic devices. Display Omitted - Highlights: • SnO monolayer is a p-type transparent semiconducting oxide. • The transparent properties can be still maintained under the strain 8%. • It has a high hole mobility (∼641 cm 2 V −1 s −1 ), which is higher than that of MoS 2 monolayer. - Abstract: More recently, two-dimensional (2D) SnO nanosheets are attaching great attention due to its excellent carrier mobility and transparent characteristics. Here, the stability, electronic structures and carrier mobility of SnO monolayer are investigated by using first-principles calculations. The calculations of the phonon dispersion spectra indicate that SnO monolayer is dynamically stable. Moreover, the band gap values are decreased from 3.93 eV to 2.75 eV when the tensile strain is applied from 0% to 12%. Interestingly, SnO monolayer is a p-type transparent semiconducting oxide with hole mobility of 641 cm 2 V −1 s −1 , which is much higher than that of MoS 2 monolayer. These findings make SnO monolayer becomes a promising 2D material for applications in nanoelectronic devices.

Electronic waste recovery in Finland: Consumers' perceptions towards recycling and re-use of mobile phones.

Science.gov (United States)

Ylä-Mella, Jenni; Keiski, Riitta L; Pongrácz, Eva

2015-11-01

This paper examines consumers' awareness and perceptions towards mobile phone recycling and re-use. The results are based on a survey conducted in the city of Oulu, Finland, and analysed in the theoretical framework based on the theories of planned behaviour (TPB) and value-belief-norm (VBN). The findings indicate that consumers' awareness of the importance and existence of waste recovery system is high; however, awareness has not translated to recycling behaviour. The survey reveals that 55% of respondents have two or more unused mobile phones at homes. The more phones stored at homes, the more often reasons 'I don't know where to return' and/or 'have not got to do it yet' were mentioned. This indicates that proximity and the convenience of current waste management system are inadequate in promoting the return of small waste electrical and electronic equipment (WEEE). To facilitate re-use, and the highest level of recovery, consumers will need to be committed to return end-of-use electronics to WEEE collection centres without delays. Further, the supply and demand of refurbished mobile phones do not meet at this moment in Finland due to consumer's storing habits versus expectations of recent features under guarantee and unrealistic low prizes. The study also points out that, in order to change current storing habits of consumers, there is an explicit need for more information and awareness on mobile phone collection in Finland, especially on regarding retailers' take-back. Copyright © 2015 Elsevier Ltd. All rights reserved.

Electron mobility and saturation of ion yield in 2,2,4,4-tetramethylpentane

International Nuclear Information System (INIS)

Poffenberger, P.R.; Astbury, A.; Fincke-Keeler, M.; Keeler, R.K.; Li, Y.; Robertson, L.P.; Rosvick, M.; Schenk, P.; Oram, C.; Sobie, R.

1993-01-01

The electron drift mobility μ and zero field free ion yield G fi 0 have been measured for liquid 2,2,4,4-tetramethylpentane using a waveform analysis. The saturation of the ion yield for highly ionizing radiation has also been investigated and parameterized using the Birks' equation. The results obtained are μ=26.3±0.8 cm 2 /V s, G fi 0 =0.743±0.029 electrons/100 eV, and a Birks' factor ranging from kB=0.222±0.014 cm/MeV at 604 V/cm to kB=0.141±0.021 cm/MeV at 3625 V/cm. (orig.)

Exploring the factors that influence physician technostress from using mobile electronic medical records.

Science.gov (United States)

Liu, Chung-Feng; Cheng, Tain-Junn; Chen, Chin-Tung

2017-10-25

This paper proposes an integrated model for investigating how physicians' perceived individual and technology characteristics affect their technological stress (technostress) that is derived from using mobile electronic medical records (MEMRs). Individual characteristics comprise constructs of mobile self-efficacy and technology dependence, whereas perceived technology characteristics comprise constructs of perceived usefulness, complexity, and reliability. We employed the survey method to collect 158 valid questionnaires from physicians working at three branch hospitals to determine perceptions regarding MEMRs, yielding a response rate of 33.62%. Partial least squares, a structural equation modeling technique, was used for model examination and hypothesis testing. The results show that physicians have a low perception of MEMR dependence and technostress. Furthermore, physicians' perceived MEMR technology dependency, mobile self-efficacy, and complexity were proven to significantly affect physician technostress when using MEMRs, whereas perceived usefulness and reliability were not. The explanatory power of the research model reached 67.8%. The results of this study provide valuable insights and significant knowledge for technostress in health care, particularly from academic and practical perspectives.

Prediction of a mobile two-dimensional electron gas at the LaSc O3 /BaSn O3 (001) interface

Science.gov (United States)

Paudel, Tula R.; Tsymbal, Evgeny Y.

2017-12-01

Two-dimensional electron gases (2DEG) at oxide interfaces, such as LaAl O3 /SrTi O3 (001), have aroused significant interest due to their high carrier density (˜1014c m-2 ) and strong lateral confinement (˜1 nm). However, these 2DEGs are normally hosted by the weakly dispersive and degenerate d bands (e.g., Ti -3 d bands), which are strongly coupled to the lattice, causing mobility of such 2DEGs to be relatively low at room temperature (˜1 c m2/Vs ). Here, we propose using oxide host materials with the conduction bands formed from s electrons to increase carrier mobility and soften its temperature dependence. Using first-principles density functional theory calculations, we investigate LaSc O3 /BaSn O3 (001) heterostructure and as a model system, where the conduction band hosts the s -like carriers. We find that the polar discontinuity at this interface leads to electronic reconstruction resulting in the formation of the 2DEG at this interface. The conduction electrons reside in the highly dispersive Sn -5 s bands, which have a large band width and a low effective mass. The predicted 2DEG is expected to be highly mobile even at room temperature due to the reduced electron-phonon scattering via the inter-band scattering channel. A qualitatively similar behavior is predicted for a doped BaSn O3 , where a monolayer of BaO is replaced with LaO. We anticipate that the quantum phenomena associated with these 2DEGs to be more pronounced owing to the high mobility of the carriers.

Characterising thermal resistances and capacitances of GaN high-electron-mobility transistors through dynamic electrothermal measurements

DEFF Research Database (Denmark)

Wei, Wei; Mikkelsen, Jan H.; Jensen, Ole Kiel

2014-01-01

This study presents a method to characterise thermal resistances and capacitances of GaN high-electron-mobility transistors (HEMTs) through dynamic electrothermal measurements. A measured relation between RF gain and the channel temperature (Tc) is formed and used for indirect measurements...

Electromagnetic interference of mobile phones with electronic implants

International Nuclear Information System (INIS)

Kainz, W.

2000-03-01

Chapter 1:Interference matrix: The objective of Chapter 1 was to give an overview of the implants used at present and their electromagnetic compatibility (EMC). The evaluation of the available literature provides an estimate of the probability of electronic implants being influenced by various interference sources. A literature search at the AKH (Allgemeines Krankenhaus) in Vienna and at the Technical University of Vienna in the FIZ (Fach-Informations-Zentrum) -Biomedizinische Technik, Medline, Pascal Biomed, CC Search und Embase databases yielded 236 relevant publications. At present 12 different implants are used: pacemaker, defibrillator, cochlear and brain-stem implants, neurostimulators, spinal-cord stimulators, spinal-fusion stimulators, telemetry systems, artificial hearts, drug-delivery systems, neurological pulse generators, visual prosthetics and implantable patient chips. The frequency with which they are used and the EMC on exposure to the various interference sources was summarized. Publications on EMC were found only for the first six implant types and only for 30% of the possible combinations of implant type and interference source. Based on the number of the implants examined, the probability of interference was calculated and summarized in the interference matrix. Chapter 2:Measurements on the phantom: No publication on the electromagnetic compatibility of neurological pulse generators (NPG) could be found. This implant has been used increasingly in the last few years to treat Parkinson's disease. A phantom was built to examine this implant at 900 MHz. The electromagnetic compatibility was measured by exposing the NPG to the fields of ten different 900 MHz GSM mobile phones. Every mobile phone was tested in three different positions relative to the phantom, with four electrode configurations and four stimulation parameters. No interference was found even at a maximum transmit power of 2 watts. Further tests with half-wave dipoles and increased

Scattering and mobility in indium gallium arsenide channel, pseudomorphic high electron mobility transistors (InGaAs pHEMTs)

International Nuclear Information System (INIS)

Pearson, J.L.

1999-03-01

Extensive transport measurements have been completed on deep and shallow-channelled InGaAs p-HEMTs of varying growth temperature, indium content, spacer thickness and doping density, with a view to a thorough characterisation, both in the metallic and the localised regimes. Particular emphasis was given to MBE grown layers, with characteristics applicable for device use, but low measurement temperatures were necessary to resolve the elastic scattering mechanisms. Measurements made in the metallic regime included transport and quantum mobility - the former over a range of temperatures between 1.5K to 300K. Conductivity measurements were also acquired in the strong localisation regime between about 1.5K and 100K. Experimentally determined parameters were tested for comparison with those predicted by an electrostatic model. Excellent agreement was obtained for carrier density. Other parameters were less well predicted, but the relevant experimental measurements, including linear depletion of the 2DEG, were sensitive to any excess doping above a 'critical' value determined by the model. At low temperature (1.5K), it was found that in all samples tested, transport mobility was strongly limited at all carrier densities by a large q mechanism, possibly intrinsic to the channel. This was ascribed either to scattering by the long-range potentials arising from the indium concentration fluctuations or fluctuations in the thickness of the channel layer. This mechanism dominates the transport at low carrier densities for all samples, but at high carrier density, an additional mechanism is significant for samples with the thinnest spacers tested (2.5nm). This is ascribed to direct electron interaction with the states of the donor layer, and produces a characteristic transport mobility peak. At higher carrier densities, past the peak, quantum mobility was found only to increase monotonically in value. Remote ionised impurity scattering while significant, particularly for samples

Experimental determination of the electron effective masses and mobilities in each dimensionally-quantized subband in an InxGa1−xAs quantum well with InAs inserts

International Nuclear Information System (INIS)

Kulbachinskii, V. A.; Oveshnikov, L. N.; Lunin, R. A.; Yuzeeva, N. A.; Galiev, G. B.; Klimov, E. A.; Maltsev, P. P.

2015-01-01

HEMT structures with In 0.53 Ga 0.47 As quantum well are synthesized using molecular-beam epitaxy on InP substrates. The structures are double-side Si δ-doped so that two dimensionally-quantized subbands are occupied. The effect of the central InAs nanoinsert in the quantum well on the electron effective masses m* and mobilities in each subband is studied. For experimental determination of m*, the quantum μ q and transport μ t mobilities of the two-dimensional electron gas in each dimensionally-quantized subband, the Shubnikov-de Haas effect is measured at two temperatures of 4.2 and 8.4 K. The electron effective masses are determined by the temperature dependence of the oscillation amplitudes, separating the oscillations of each dimensionally-quantized subband. The Fourier spectra of oscillations are used to determine the electron mobilities μ q and μ t in each dimensionally-quantized subband. It is shown that m* decreases as the InAs-nanoinsert thickness d in the In 0.53 Ga 0.47 As quantum well and electron mobilities increase. The maximum electron mobility is observed at the insert thickness d = 3.4 nm

Recycling-oriented characterization of plastic frames and printed circuit boards from mobile phones by electronic and chemical imaging

International Nuclear Information System (INIS)

Palmieri, Roberta; Bonifazi, Giuseppe; Serranti, Silvia

2014-01-01

Highlights: • A recycling oriented characterization of end-of-life mobile phones was carried out. • Characterization was developed in a zero-waste-perspective, aiming to recover all the mobile phone materials. • Plastic frames and printed circuit boards were analyzed by electronic and chemical imaging. • Suitable milling/classification strategies were set up to define specialized-pre-concentrated-streams. • The proposed approach can improve the recovery of polymers, base/precious metals, rare earths and critical raw materials. - Abstract: This study characterizes the composition of plastic frames and printed circuit boards from end-of-life mobile phones. This knowledge may help define an optimal processing strategy for using these items as potential raw materials. Correct handling of such a waste is essential for its further “sustainable” recovery, especially to maximize the extraction of base, rare and precious metals, minimizing the environmental impact of the entire process chain. A combination of electronic and chemical imaging techniques was thus examined, applied and critically evaluated in order to optimize the processing, through the identification and the topological assessment of the materials of interest and their quantitative distribution. To reach this goal, end-of-life mobile phone derived wastes have been systematically characterized adopting both “traditional” (e.g. scanning electronic microscopy combined with microanalysis and Raman spectroscopy) and innovative (e.g. hyperspectral imaging in short wave infrared field) techniques, with reference to frames and printed circuit boards. Results showed as the combination of both the approaches (i.e. traditional and classical) could dramatically improve recycling strategies set up, as well as final products recovery

Recycling-oriented characterization of plastic frames and printed circuit boards from mobile phones by electronic and chemical imaging

Energy Technology Data Exchange (ETDEWEB)

Palmieri, Roberta; Bonifazi, Giuseppe; Serranti, Silvia, E-mail: silvia.serranti@uniroma1.it

2014-11-15

Highlights: • A recycling oriented characterization of end-of-life mobile phones was carried out. • Characterization was developed in a zero-waste-perspective, aiming to recover all the mobile phone materials. • Plastic frames and printed circuit boards were analyzed by electronic and chemical imaging. • Suitable milling/classification strategies were set up to define specialized-pre-concentrated-streams. • The proposed approach can improve the recovery of polymers, base/precious metals, rare earths and critical raw materials. - Abstract: This study characterizes the composition of plastic frames and printed circuit boards from end-of-life mobile phones. This knowledge may help define an optimal processing strategy for using these items as potential raw materials. Correct handling of such a waste is essential for its further “sustainable” recovery, especially to maximize the extraction of base, rare and precious metals, minimizing the environmental impact of the entire process chain. A combination of electronic and chemical imaging techniques was thus examined, applied and critically evaluated in order to optimize the processing, through the identification and the topological assessment of the materials of interest and their quantitative distribution. To reach this goal, end-of-life mobile phone derived wastes have been systematically characterized adopting both “traditional” (e.g. scanning electronic microscopy combined with microanalysis and Raman spectroscopy) and innovative (e.g. hyperspectral imaging in short wave infrared field) techniques, with reference to frames and printed circuit boards. Results showed as the combination of both the approaches (i.e. traditional and classical) could dramatically improve recycling strategies set up, as well as final products recovery.

Electrorecycling of Critical and Value Metals from Mobile Electronics

Energy Technology Data Exchange (ETDEWEB)

Lister, Tedd E.; Wang, Peming; Anderko, Andre

2014-09-01

Mobile electronic devices such as smart phones and tablets are a significant source of valuable metals that should be recycled. Each year over a billion devices are sold world-wide and the average life is only a couple years. Value metals in phones are gold, palladium, silver, copper, cobalt and nickel. Devices now contain increasing amounts of rare earth elements (REE). In recent years the supply chain for REE has moved almost exclusively to China. They are contained in displays, speakers and vibrators within the devices. By US Department of Energy (DOE) classification, specific REEs (Nd, Dy, Eu, Tb and Y) are considered critical while others (Ce, La and Pr) are deemed near critical. Effective recycling schemes should include the recovery of these critical materials. By including more value materials in a recovery scheme, more value can be obtained by product diversification and less waste metals remains to be disposed of. REEs are mined as a group such that when specific elements become critical significantly more ore must be processed to capture the dilute but valuable critical elements. Targeted recycling of items containing the more of the less available critical materials could address their future criticality. This presentation will describe work in developing aqueous electrochemistry-based schemes for recycling metals from scrap mobile electronics. The electrorecycling process generates oxidizing agents at an anode while reducing dissolved metals at the cathode. E vs pH diagrams and metals dissolution experiments are used to assess effectiveness of various solution chemistries. Although several schemes were envisioned, a two stages process has been the focus of work: 1) initial dissolution of Cu, Sn, Ag and magnet materials using Fe+3 generated in acidic sulfate and 2) final dissolution of Pd and Au using Cl2 generated in an HCl solution. Experiments were performed using simulated metal mixtures. Both Cu and Ag were recovered at ~ 97% using Fe+3 while

Electronic characteristics of p-type transparent SnO monolayer with high carrier mobility

Energy Technology Data Exchange (ETDEWEB)

Du, Juan [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China); Xia, Congxin, E-mail: xiacongxin@htu.edu.cn [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China); Liu, Yaming [Henan Institute of Science and Technology, Xinxiang 453003 (China); Li, Xueping [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China); Peng, Yuting [Department of Physics, University of Texas at Arlington, TX 76019 (United States); Wei, Shuyi [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China)

2017-04-15

Graphical abstract: SnO monolayer is a p-type transparent semiconducting oxide with high hole mobility (∼641 cm{sup 2} V{sup −1} s{sup −1}), which is much higher than that of MoS{sub 2} monolayer, which indicate that it can be a promising candidate for high-performance nanoelectronic devices. Display Omitted - Highlights: • SnO monolayer is a p-type transparent semiconducting oxide. • The transparent properties can be still maintained under the strain 8%. • It has a high hole mobility (∼641 cm{sup 2} V{sup −1} s{sup −1}), which is higher than that of MoS{sub 2} monolayer. - Abstract: More recently, two-dimensional (2D) SnO nanosheets are attaching great attention due to its excellent carrier mobility and transparent characteristics. Here, the stability, electronic structures and carrier mobility of SnO monolayer are investigated by using first-principles calculations. The calculations of the phonon dispersion spectra indicate that SnO monolayer is dynamically stable. Moreover, the band gap values are decreased from 3.93 eV to 2.75 eV when the tensile strain is applied from 0% to 12%. Interestingly, SnO monolayer is a p-type transparent semiconducting oxide with hole mobility of 641 cm{sup 2} V{sup −1} s{sup −1}, which is much higher than that of MoS{sub 2} monolayer. These findings make SnO monolayer becomes a promising 2D material for applications in nanoelectronic devices.

Tunable electron heating induced giant magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system.

Science.gov (United States)

Wang, Zhuo; Samaraweera, R L; Reichl, C; Wegscheider, W; Mani, R G

2016-12-07

Electron-heating induced by a tunable, supplementary dc-current (I dc ) helps to vary the observed magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system. The magnetoresistance at B = 0.3 T is shown to progressively change from positive to negative with increasing I dc , yielding negative giant-magnetoresistance at the lowest temperature and highest I dc . A two-term Drude model successfully fits the data at all I dc and T. The results indicate that carrier heating modifies a conductivity correction σ 1 , which undergoes sign reversal from positive to negative with increasing I dc , and this is responsible for the observed crossover from positive- to negative- magnetoresistance, respectively, at the highest B.

Performance Analysis of GaN Capping Layer Thickness on GaN/AlGaN/GaN High Electron Mobility Transistors.

Science.gov (United States)

Sharma, N; Periasamy, C; Chaturvedi, N

2018-07-01

In this paper, we present an investigation of the impact of GaN capping layer and AlGaN layer thickness on the two-dimensional (2D)-electron mobility and the carrier concentration which was formed close to the AlGaN/GaN buffer layer for Al0.25Ga0.75N/GaN and GaN/Al0.25Ga0.75N/GaN heterostructures deposited on sapphire substrates. The results of our analysis clearly indicate that expanding the GaN capping layer thickness from 1 nm to 100 nm prompts an increment in the electron concentration at hetero interface. As consequence of which drain current was additionally increments with GaN cap layer thicknesses, and eventually saturates at approximately 1.85 A/mm for capping layer thickness greater than 40 nm. Interestingly, for the same structure, the 2D-electron mobility, decrease monotonically with GaN capping layer thickness, and saturate at approximately 830 cm2/Vs for capping layer thickness greater than 50 nm. A device with a GaN cap layer didn't exhibit gate leakage current. Furthermore, it was observed that the carrier concentration was first decrease 1.03 × 1019/cm3 to 6.65 × 1018/cm3 with AlGaN Layer thickness from 5 to 10 nm and after that it increases with the AlGaN layer thickness from 10 to 30 nm. The same trend was followed for electric field distributions. Electron mobility decreases monotonically with AlGaN layer thickness. Highest electron mobility 1354 cm2/Vs were recorded for the AlGaN layer thickness of 5 nm. Results obtained are in good agreement with published experimental data.

A surface diffuse scattering model for the mobility of electrons in surface charge coupled devices

International Nuclear Information System (INIS)

Ionescu, M.

1977-01-01

An analytical model for the mobility of electrons in surface charge coupled devices is studied on the basis of the results previously obtained, considering a surface diffuse scattering; the importance of the results obtained for a better understanding of the influence of the fringing field in surface charge coupled devices is discussed. (author)

Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors

International Nuclear Information System (INIS)

Tan Ren-Bing; Qin Hua; Zhang Xiao-Yu; Xu Wen

2013-01-01

We present a theoretical study on the electric field driven plasmon dispersion of the two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistors (HEMTs). By introducing a drifted Fermi—Dirac distribution, we calculate the transport properties of the 2DEG in the AlGaN/GaN interface by employing the balance-equation approach based on the Boltzmann equation. Then, the nonequilibrium Fermi—Dirac function is obtained by applying the calculated electron drift velocity and electron temperature. Under random phase approximation (RPA), the electric field driven plasmon dispersion is investigated. The calculated results indicate that the plasmon frequency is dominated by both the electric field E and the angle between wavevector q and electric field E. Importantly, the plasmon frequency could be tuned by the applied source—drain bias voltage besides the gate voltage (change of the electron density)

Electron mobility and drift velocity in selectively doped InAlAs/InGaAs/InAlAs heterostructures

International Nuclear Information System (INIS)

Vasil’evskii, I. S.; Galiev, G. B.; Klimov, E. A.; Požela, K.; Požela, J.; Jucienė, V.; Sužiedėlis, A.; Žurauskienė, N.; Keršulis, S.; Stankevič, V.

2011-01-01

An increase in the electron mobility and drift velocity in high electric fields in quantum wells of selectively doped InAlAs/InGaAs/InAsAs heterostructures is obtained experimentally via controlling the composition of semiconductors forming the interface. The electron mobility at the interface in the In 0.8 Ga 0.2 As/In 0.7 Al 0.3 As metamorphic structure with a high molar fraction of In (0.7–0.8) is as high as 12.3 × 10 3 cm 2 V −1 s −1 at room temperature. An increase in the electron mobility by a factor of 1.1–1.4 is attained upon the introduction of thin (1–3 nm) InAs layers into a quantum well of selectively doped In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As heterostructures. A maximal drift velocity attains 2.5 × 10 7 cm/s in electric fields of 2–5 kV/cm. The threshold field F th for the intervalley Γ-L electron transfer (the Gunn effect) in the InGaAs quantum well is higher than in the bulk material by a factor of 2.5–3. The effect of two- to threefold decrease in the threshold field F th in the InGaAs quantum well is established upon increasing the molar fraction of In in the InAlAs barrier, as well as upon the introduction of thin InAs inserts into the InGaAs quantum well.

Power Dependence of the Electron Mobility Profile in a Hall Thruster

Science.gov (United States)

Jorns, Benjamin A.; Hofery, Richard H.; Mikellides, Ioannis G.

2014-01-01

The electron mobility profile is estimated in a 4.5 kW commercial Hall thruster as a function of discharge power. Internal measurements of plasma potential and electron temperature are made in the thruster channel with a high-speed translating probe. These measurements are presented for a range of throttling conditions from 150 - 400 V and 0.6 - 4.5 kW. The fluid-based solver, Hall2De, is used in conjunction with these internal plasma parameters to estimate the anomalous collision frequency profile at fixed voltage, 300 V, and three power levels. It is found that the anomalous collision frequency profile does not change significantly upstream of the location of the magnetic field peak but that the extent and magnitude of the anomalous collision frequency downstream of the magnetic peak does change with thruster power. These results are discussed in the context of developing phenomenological models for how the collision frequency profile depends on thruster operating conditions.

Method for enhancing the resolving power of ion mobility separations over a limited mobility range

Science.gov (United States)

Shvartsburg, Alexandre A; Tang, Keqi; Smith, Richard D

2014-09-23

A method for raising the resolving power, specificity, and peak capacity of conventional ion mobility spectrometry is disclosed. Ions are separated in a dynamic electric field comprising an oscillatory field wave and opposing static field, or at least two counter propagating waves with different parameters (amplitude, profile, frequency, or speed). As the functional dependencies of mean drift velocity on the ion mobility in a wave and static field or in unequal waves differ, only single species is equilibrated while others drift in either direction and are mobility-separated. An ion mobility spectrum over a limited range is then acquired by measuring ion drift times through a fixed distance inside the gas-filled enclosure. The resolving power in the vicinity of equilibrium mobility substantially exceeds that for known traveling-wave or drift-tube IMS separations, with spectra over wider ranges obtainable by stitching multiple segments. The approach also enables low-cutoff, high-cutoff, and bandpass ion mobility filters.

Carrier mobilities in microcrystalline silicon films

International Nuclear Information System (INIS)

Bronger, T.; Carius, R.

2007-01-01

For a better understanding of electronic transport mechanisms in thin-film silicon solar cell quality films, we have investigated the Hall mobility for electrons in microcrystalline/amorphous silicon over a range of crystallinities and doping concentrations. We find that Hall mobility increases with increasing doping concentration in accordance with earlier measurements. With increasing amorphous fraction, the measured mobility decreases suggesting a negative influence of the additional disorder. The results suggest a differential mobility model in which mobility depends on the energy level of the carriers that contribute to the electrical current

Mobile Phones for Teaching and Learning: Implementation and Students' and Teachers' Attitudes

Science.gov (United States)

AlTameemy, Farooq

2017-01-01

Mobile phones have become so ubiquitous that they turned into an important part of our life. According to Parsons, mobile subscriptions exceed 6 billion subscriptions globally. Similarly, Ipsos and Verizon (as cited in Tan & El-Bendary) found out that adopting mobile phones with smart technologies has increased fast which also coincided with a…

The Impacts of Attitudes and Engagement on Electronic Word of Mouth (eWOM) of Mobile Sensor Computing Applications.

Science.gov (United States)

Zhao, Yu; Liu, Yide; Lai, Ivan K W; Zhang, Hongfeng; Zhang, Yi

2016-03-18

As one of the latest revolutions in networking technology, social networks allow users to keep connected and exchange information. Driven by the rapid wireless technology development and diffusion of mobile devices, social networks experienced a tremendous change based on mobile sensor computing. More and more mobile sensor network applications have appeared with the emergence of a huge amount of users. Therefore, an in-depth discussion on the human-computer interaction (HCI) issues of mobile sensor computing is required. The target of this study is to extend the discussions on HCI by examining the relationships of users' compound attitudes (i.e., affective attitudes, cognitive attitude), engagement and electronic word of mouth (eWOM) behaviors in the context of mobile sensor computing. A conceptual model is developed, based on which, 313 valid questionnaires are collected. The research discusses the level of impact on the eWOM of mobile sensor computing by considering user-technology issues, including the compound attitude and engagement, which can bring valuable discussions on the HCI of mobile sensor computing in further study. Besides, we find that user engagement plays a mediating role between the user's compound attitudes and eWOM. The research result can also help the mobile sensor computing industry to develop effective strategies and build strong consumer user-product (brand) relationships.

Characteristics in AlN/AlGaN/GaN Multilayer-Structured High-Electron-Mobility Transistors

International Nuclear Information System (INIS)

Gui-Zhou, Hu; Ling, Yang; Li-Yuan, Yang; Si, Quan; Shou-Gao, Jiang; Ji-Gang, Ma; Xiao-Hua, Ma; Yue, Hao

2010-01-01

A new multilayer-structured AlN/AlGaN/GaN heterostructure high-electron-mobility transistor (HEMT) is demonstrated. The AlN/AlGaN/GaN HEMT exhibits the maximum drain current density of 800 mA/mm and the maximum extrinsic transconductance of 170 mS/mm. Due to the increase of the distance between the gate and the two-dimensional electron-gas channel, the threshold voltage shifts slightly to the negative. The reduced drain current collapse and higher breakdown voltage are observed on this AlN/AlGaN/GaN HEMT. The current gain cut-off frequency and the maximum frequency of oscillation are 18.5 GHz and 29.0 GHz, respectively. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Enhanced Electron Mobility in Nonplanar Tensile Strained Si Epitaxially Grown on SixGe1-x Nanowires.

Science.gov (United States)

Wen, Feng; Tutuc, Emanuel

2018-01-10

We report the growth and characterization of epitaxial, coherently strained Si x Ge 1-x -Si core-shell nanowire heterostructure through vapor-liquid-solid growth mechanism for the Si x Ge 1-x core, followed by an in situ ultrahigh-vacuum chemical vapor deposition for the Si shell. Raman spectra acquired from individual nanowire reveal the Si-Si, Si-Ge, and Ge-Ge modes of the Si x Ge 1-x core and the Si-Si mode of the shell. Because of the compressive (tensile) strain induced by lattice mismatch, the core (shell) Raman modes are blue (red) shifted compared to those of unstrained bare Si x Ge 1-x (Si) nanowires, in good agreement with values calculated using continuum elasticity model coupled with lattice dynamic theory. A large tensile strain of up to 2.3% is achieved in the Si shell, which is expected to provide quantum confinement for electrons due to a positive core-to-shell conduction band offset. We demonstrate n-type metal-oxide-semiconductor field-effect transistors using Si x Ge 1-x -Si core-shell nanowires as channel and observe a 40% enhancement of the average electron mobility compared to control devices using Si nanowires due to an increased electron mobility in the tensile-strained Si shell.

Improved DC performance of AlGaN/GaN high electron mobility transistors using hafnium oxide for surface passivation

International Nuclear Information System (INIS)

Liu, Chang; Chor, Eng Fong; Tan, Leng Seow

2007-01-01

Improved DC performance of AlGaN/GaN high electron mobility transistors (HEMTs) have been demonstrated using reactive-sputtered hafnium oxide (HfO 2 ) thin film as the surface passivation layer. Hall data indicate a significant increase in the product of sheet carrier concentration (n s ) and electron mobility (μ n ) in the HfO 2 -passivated HEMTs, compared to the unpassivated HEMTs. This improvement in electron carrier characteristics gives rise to a 22% higher I Dmax and an 18% higher g mmax in HEMTs with HfO 2 passivation relative to the unpassivated devices. On the other hand, I gleak of the HEMTs decreases by nearly one order of magnitude when HfO 2 passivation is applied. In addition, drain current is measured in the subthreshold regime. Compared to the unpassivated HEMTs, HfO 2 -passivated HEMTs exhibit a much smaller off-state I D , indicating better turn-off characteristics

76 FR 41522 - In the Matter of Certain Electronic Devices, Including Mobile Phones, Mobile Tablets, Portable...

Science.gov (United States)

2011-07-14

... Devices, Including Mobile Phones, Mobile Tablets, Portable Music Players, and Computers, and Components.... 1337, in the importation, sale for importation and sale within the United States after importation of certain mobile phones, mobile tablets, portable music players, and computers. 76 FR 24051 (Apr. 29, 2011...

Improving crystallization and electron mobility of indium tin oxide by carbon dioxide and hydrogen dual-step plasma treatment

Science.gov (United States)

Wang, Fengyou; Du, Rongchi; Ren, Qianshang; Wei, Changchun; Zhao, Ying; Zhang, Xiaodan

2017-12-01

Obtaining high conductivity indium tin oxide (ITO) films simultaneously with a "soft-deposited" (low temperature, low ions bombardment) and cost-efficient deposition process are critical aspect for versatile photo-electronic devices application. Usually, the low-cost "soft-deposited" process could be achieved via evaporation technique, but with scarifying the conductivity of the films. Here, we show a CO2 and H2 two-step plasma (TSP) post-treatment applied to ITO films prepared by reactive thermal evaporation (RTE), allows to meet the special trade-off between the deposition techniques and the electrical properties. Upon treatment, an increase in electron concentration and electron mobility is observed, which subsequently resulting a low sheet resistivity. The mobility reaches high values of 80.9 cm2/Vs for the TSP treated ∼100 nm thickness samples. From a combination of X-ray photoelectron spectroscopy and opto-electronic measurements, it demonstrated that: during the TSP process, the first-step CO2 plasma treatment could promote the crystallinity of the RTE ITO films. While the electron traps density at grain boundaries of polycrystalline RTE ITO films could be passivated by hydrogen atom during the second-step H2 plasma treatment. These results inspired that the TSP treatment process has significant application prospects owing to the outstanding electrical properties enhancement for "soft-deposited" RTE ITO films.

Toward Environmentally Robust Organic Electronics: Approaches and Applications.

Science.gov (United States)

Lee, Eun Kwang; Lee, Moo Yeol; Park, Cheol Hee; Lee, Hae Rang; Oh, Joon Hak

2017-11-01

Recent interest in flexible electronics has led to a paradigm shift in consumer electronics, and the emergent development of stretchable and wearable electronics is opening a new spectrum of ubiquitous applications for electronics. Organic electronic materials, such as π-conjugated small molecules and polymers, are highly suitable for use in low-cost wearable electronic devices, and their charge-carrier mobilities have now exceeded that of amorphous silicon. However, their commercialization is minimal, mainly because of weaknesses in terms of operational stability, long-term stability under ambient conditions, and chemical stability related to fabrication processes. Recently, however, many attempts have been made to overcome such instabilities of organic electronic materials. Here, an overview is provided of the strategies developed for environmentally robust organic electronics to overcome the detrimental effects of various critical factors such as oxygen, water, chemicals, heat, and light. Additionally, molecular design approaches to π-conjugated small molecules and polymers that are highly stable under ambient and harsh conditions are explored; such materials will circumvent the need for encapsulation and provide a greater degree of freedom using simple solution-based device-fabrication techniques. Applications that are made possible through these strategies are highlighted. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Charge fluctuations in high-electron-mobility transistors: a review

International Nuclear Information System (INIS)

Green, F.

1993-01-01

The quasi-two-dimensional carrier population, free to move within a near-perfect crystalline matrix, is the key to remarkable improvements in signal gain, current density and quiet operation. Current-fluctuation effects are central to all of these properties. Some of these are easily understood within linear-response theory, but other fluctuation phenomena are less tractable. In particular, nonequilibrium noise poses significant theoretical challenges, both descriptive and predictive. This paper examines a few of the basic physical issues which motivate device-noise theory. The structure and operation of high-electron-mobility transistor are first reviewed. The recent nonlinear fluctuation theory of Stanton and Wilkins (1987) help to identify at least some of the complicated noise physics which can arise when carriers in GaAs-like conduction bands are subjected to high fields. Simple examples of fluctuation-dominated behaviour are discussed, with numerical illustrations. 20 refs., 9 figs

Mobility-electron density relation probed via controlled oxygen vacancy doping in epitaxial BaSnO3

Directory of Open Access Journals (Sweden)

Koustav Ganguly

2017-05-01

Full Text Available The recently discovered high room temperature mobility in wide band gap semiconducting BaSnO3 is of exceptional interest for perovskite oxide heterostructures. Critical open issues with epitaxial films include determination of the optimal dopant and understanding the mobility-electron density (μ-n relation. These are addressed here through a transport study of BaSnO3(001 films with oxygen vacancy doping controlled via variable temperature vacuum annealing. Room temperature n can be tuned from 5 × 1019 cm−3 to as low as 2 × 1017 cm−3, which is shown to drive a weak- to strong-localization transition, a 104-fold increase in resistivity, and a factor of 28 change in μ. The data reveal μ ∝ n0.65 scaling over the entire n range probed, important information for understanding mobility-limiting scattering mechanisms.

High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices

KAUST Repository

Lin, Yen-Hung; Faber, Hendrik; Labram, John G.; Stratakis, Emmanuel; Sygellou, Labrini; Kymakis, Emmanuel; Hastas, Nikolaos A.; Li, Ruipeng; Zhao, Kui; Amassian, Aram; Treat, Neil D.; McLachlan, Martyn; Anthopoulos, Thomas D.

2015-01-01

High mobility thin-film transistor technologies that can be implemented using simple and inexpensive fabrication methods are in great demand because of their applicability in a wide range of emerging optoelectronics. Here, a novel concept of thin-film transistors is reported that exploits the enhanced electron transport properties of low-dimensional polycrystalline heterojunctions and quasi-superlattices (QSLs) consisting of alternating layers of In2O3, Ga2O3, and ZnO grown by sequential spin casting of different precursors in air at low temperatures (180–200 °C). Optimized prototype QSL transistors exhibit band-like transport with electron mobilities approximately a tenfold greater (25–45 cm2 V−1 s−1) than single oxide devices (typically 2–5 cm2 V−1 s−1). Based on temperature-dependent electron transport and capacitance-voltage measurements, it is argued that the enhanced performance arises from the presence of quasi 2D electron gas-like systems formed at the carefully engineered oxide heterointerfaces. The QSL transistor concept proposed here can in principle extend to a range of other oxide material systems and deposition methods (sputtering, atomic layer deposition, spray pyrolysis, roll-to-roll, etc.) and can be seen as an extremely promising technology for application in next-generation large area optoelectronics such as ultrahigh definition optical displays and large-area microelectronics where high performance is a key requirement.

High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices

KAUST Repository

Lin, Yen-Hung

2015-05-26

High mobility thin-film transistor technologies that can be implemented using simple and inexpensive fabrication methods are in great demand because of their applicability in a wide range of emerging optoelectronics. Here, a novel concept of thin-film transistors is reported that exploits the enhanced electron transport properties of low-dimensional polycrystalline heterojunctions and quasi-superlattices (QSLs) consisting of alternating layers of In2O3, Ga2O3, and ZnO grown by sequential spin casting of different precursors in air at low temperatures (180–200 °C). Optimized prototype QSL transistors exhibit band-like transport with electron mobilities approximately a tenfold greater (25–45 cm2 V−1 s−1) than single oxide devices (typically 2–5 cm2 V−1 s−1). Based on temperature-dependent electron transport and capacitance-voltage measurements, it is argued that the enhanced performance arises from the presence of quasi 2D electron gas-like systems formed at the carefully engineered oxide heterointerfaces. The QSL transistor concept proposed here can in principle extend to a range of other oxide material systems and deposition methods (sputtering, atomic layer deposition, spray pyrolysis, roll-to-roll, etc.) and can be seen as an extremely promising technology for application in next-generation large area optoelectronics such as ultrahigh definition optical displays and large-area microelectronics where high performance is a key requirement.

Transformational Electronics: Towards Flexible Low-Cost High Mobility Channel Materials

KAUST Repository

Nassar, Joanna M.

2014-05-01

For the last four decades, Si CMOS technology has been advancing with Moore’s law prediction, working itself down to the sub-20 nm regime. However, fundamental problems and limitations arise with the down-scaling of transistors and thus new innovations needed to be discovered in order to further improve device performance without compromising power consumption and size. Thus, a lot of studies have focused on the development of new CMOS compatible architectures as well as the discovery of new high mobility channel materials that will allow further miniaturization of CMOS transistors and improvement of device performance. Pushing the limits even further, flexible and foldable electronics seem to be the new attractive topic. By being able to make our devices flexible through a CMOS compatible process, one will be able to integrate hundreds of billions of more transistors in a small volumetric space, allowing to increase the performance and speed of our electronics all together with making things thinner, lighter, smaller and even interactive with the human skin. Thus, in this thesis, we introduce for the first time a cost-effective CMOS compatible approach to make high-k/metal gate devices on flexible Germanium (Ge) and Silicon-Germanium (SiGe) platforms. In the first part, we will look at the various approaches in the literature that has been developed to get flexible platforms, as well as we will give a brief overview about epitaxial growth of Si1-xGex films. We will also examine the electrical properties of the Si1-xGex alloys up to Ge (x=1) and discuss how strain affects the band structure diagram, and thus the mobility of the material. We will also review the material growth properties as well as the state-of-the-art results on high mobility metal-oxide semiconductor capacitors (MOSCAPs) using strained SiGe films. Then, we will introduce the flexible process that we have developed, based on a cost-effective “trench-protect-release-reuse” approach, utilizing

Data mining technique for a secure electronic payment transaction using MJk-RSA in mobile computing

Science.gov (United States)

G. V., Ramesh Babu; Narayana, G.; Sulaiman, A.; Padmavathamma, M.

2012-04-01

Due to the evolution of the Electronic Learning (E-Learning), one can easily get desired information on computer or mobile system connected through Internet. Currently E-Learning materials are easily accessible on the desktop computer system, but in future, most of the information shall also be available on small digital devices like Mobile, PDA, etc. Most of the E-Learning materials are paid and customer has to pay entire amount through credit/debit card system. Therefore, it is very important to study about the security of the credit/debit card numbers. The present paper is an attempt in this direction and a security technique is presented to secure the credit/debit card numbers supplied over the Internet to access the E-Learning materials or any kind of purchase through Internet. A well known method i.e. Data Cube Technique is used to design the security model of the credit/debit card system. The major objective of this paper is to design a practical electronic payment protocol which is the safest and most secured mode of transaction. This technique may reduce fake transactions which are above 20% at the global level.

The Impacts of Attitudes and Engagement on Electronic Word of Mouth (eWOM of Mobile Sensor Computing Applications

Directory of Open Access Journals (Sweden)

Yu Zhao

2016-03-01

Full Text Available As one of the latest revolutions in networking technology, social networks allow users to keep connected and exchange information. Driven by the rapid wireless technology development and diffusion of mobile devices, social networks experienced a tremendous change based on mobile sensor computing. More and more mobile sensor network applications have appeared with the emergence of a huge amount of users. Therefore, an in-depth discussion on the human–computer interaction (HCI issues of mobile sensor computing is required. The target of this study is to extend the discussions on HCI by examining the relationships of users’ compound attitudes (i.e., affective attitudes, cognitive attitude, engagement and electronic word of mouth (eWOM behaviors in the context of mobile sensor computing. A conceptual model is developed, based on which, 313 valid questionnaires are collected. The research discusses the level of impact on the eWOM of mobile sensor computing by considering user-technology issues, including the compound attitude and engagement, which can bring valuable discussions on the HCI of mobile sensor computing in further study. Besides, we find that user engagement plays a mediating role between the user’s compound attitudes and eWOM. The research result can also help the mobile sensor computing industry to develop effective strategies and build strong consumer user—product (brand relationships.

The Impacts of Attitudes and Engagement on Electronic Word of Mouth (eWOM) of Mobile Sensor Computing Applications

Science.gov (United States)

Zhao, Yu; Liu, Yide; Lai, Ivan K. W.; Zhang, Hongfeng; Zhang, Yi

2016-01-01

As one of the latest revolutions in networking technology, social networks allow users to keep connected and exchange information. Driven by the rapid wireless technology development and diffusion of mobile devices, social networks experienced a tremendous change based on mobile sensor computing. More and more mobile sensor network applications have appeared with the emergence of a huge amount of users. Therefore, an in-depth discussion on the human–computer interaction (HCI) issues of mobile sensor computing is required. The target of this study is to extend the discussions on HCI by examining the relationships of users’ compound attitudes (i.e., affective attitudes, cognitive attitude), engagement and electronic word of mouth (eWOM) behaviors in the context of mobile sensor computing. A conceptual model is developed, based on which, 313 valid questionnaires are collected. The research discusses the level of impact on the eWOM of mobile sensor computing by considering user-technology issues, including the compound attitude and engagement, which can bring valuable discussions on the HCI of mobile sensor computing in further study. Besides, we find that user engagement plays a mediating role between the user’s compound attitudes and eWOM. The research result can also help the mobile sensor computing industry to develop effective strategies and build strong consumer user—product (brand) relationships. PMID:26999155

Determination of grain boundary mobility during recrystallization by statistical evaluation of electron backscatter diffraction measurements

International Nuclear Information System (INIS)

Basu, I.; Chen, M.; Loeck, M.; Al-Samman, T.; Molodov, D.A.

2016-01-01

One of the key aspects influencing microstructural design pathways in metallic systems is grain boundary motion. The present work introduces a method by means of which direct measurement of grain boundary mobility vs. misorientation dependence is made possible. The technique utilizes datasets acquired by means of serial electron backscatter diffraction (EBSD) measurements. The experimental EBSD measurements are collectively analyzed, whereby datasets were used to obtain grain boundary mobility and grain aspect ratio with respect to grain boundary misorientation. The proposed method is further validated using cellular automata (CA) simulations. Single crystal aluminium was cold rolled and scratched in order to nucleate random orientations. Subsequent annealing at 300 °C resulted in grains growing, in the direction normal to the scratch, into a single deformed orientation. Growth selection was observed, wherein the boundaries with misorientations close to Σ7 CSL orientation relationship (38° 〈111〉) migrated considerably faster. The obtained boundary mobility distribution exhibited a non-monotonic behavior with a maximum corresponding to misorientation of 38° ± 2° about 〈111〉 axes ± 4°, which was 10–100 times higher than the mobility values of random high angle boundaries. Correlation with the grain aspect ratio values indicated a strong growth anisotropy displayed by the fast growing grains. The observations have been discussed in terms of the influence of grain boundary character on grain boundary motion during recrystallization. - Highlights: • Statistical microstructure method to measure grain boundary mobility during recrystallization • Method implementation independent of material or crystal structure • Mobility of the Σ7 boundaries in 5N Al was calculated as 4.7 × 10"–"8 m"4/J ⋅ s. • Pronounced growth selection in the recrystallizing nuclei in Al • Boundary mobility values during recrystallization 2–3 orders of magnitude

Room-temperature mobility above 2200 cm{sup 2}/V·s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure

Energy Technology Data Exchange (ETDEWEB)

Chen, Jr-Tai, E-mail: jrche@ifm.liu.se; Persson, Ingemar; Nilsson, Daniel; Hsu, Chih-Wei; Palisaitis, Justinas; Forsberg, Urban; Persson, Per O. Å.; Janzén, Erik [Department of Physics, Chemistry, and Biology, Linköping University, SE 581 83 Linköping (Sweden)

2015-06-22

A high mobility of 2250 cm{sup 2}/V·s of a two-dimensional electron gas (2DEG) in a metalorganic chemical vapor deposition-grown AlGaN/GaN heterostructure was demonstrated. The mobility enhancement was a result of better electron confinement due to a sharp AlGaN/GaN interface, as confirmed by scanning transmission electron microscopy analysis, not owing to the formation of a traditional thin AlN exclusion layer. Moreover, we found that the electron mobility in the sharp-interface heterostructures can sustain above 2000 cm{sup 2}/V·s for a wide range of 2DEG densities. Finally, it is promising that the sharp-interface AlGaN/GaN heterostructure would enable low contact resistance fabrication, less impurity-related scattering, and trapping than the AlGaN/AlN/GaN heterostructure, as the high-impurity-contained AlN is removed.

Application Of Electronic Nose And Ion Mobility Spectrometer To Quality Control Of Spice Mixtures

International Nuclear Information System (INIS)

Banach, U.; Tiebe, C.; Huebert, Th.

2009-01-01

The aim of the paper is to demonstrate the application of electronic nose (e-nose) and ion mobility spectrometry (IMS) to quality control and to find out product adulteration of spice mixtures. Therefore the gaseous head space phase of four different spice mixtures (spices for sausages and saveloy) was differed from original composition and product adulteration. In this set of experiments metal-oxide type e-nose (KAMINA-type) has been used, and characteristic patterns of data corresponding to various complex odors of the four different spice mixtures were generated. Simultaneously an ion mobility spectrometer was coupled also to an emission chamber for the detection of gaseous components of spice mixtures. The two main methods that have been used show a clear discrimination between the original spice mixtures and product adulteration could be distinguished from original spice mixtures.

Bottleneck Analysis of the Mobile Internet Diffusion in Emerging Markets

OpenAIRE

Benseny, Jaume; Finley, Benjamin; Hämmäinen, Heikki

2016-01-01

According to the ITU, in 2013, only 6% of the population in developing countries had access to broadband Internet. Nevertheless, mobile Internet penetration rates have already exceeded those of fixed telecommunication services and may help in bridging the digital divide. To understand this phenomenon, we model the mobile Internet diffusion process via a system dynamics model that includes user competence, data price, and mobile network capacity as the main contributors to consumer utility and...

Design and simulation of a novel GaN based resonant tunneling high electron mobility transistor on a silicon substrate

International Nuclear Information System (INIS)

Chowdhury, Subhra; Biswas, Dhrubes; Chattaraj, Swarnabha

2015-01-01

For the first time, we have introduced a novel GaN based resonant tunneling high electron mobility transistor (RTHEMT) on a silicon substrate. A monolithically integrated GaN based inverted high electron mobility transistor (HEMT) and a resonant tunneling diode (RTD) are designed and simulated using the ATLAS simulator and MATLAB in this study. The 10% Al composition in the barrier layer of the GaN based RTD structure provides a peak-to-valley current ratio of 2.66 which controls the GaN based HEMT performance. Thus the results indicate an improvement in the current–voltage characteristics of the RTHEMT by controlling the gate voltage in this structure. The introduction of silicon as a substrate is a unique step taken by us for this type of RTHEMT structure. (paper)

Dependence of ion beam current on position of mobile plate tuner in multi-frequencies microwaves electron cyclotron resonance ion source

International Nuclear Information System (INIS)

Kurisu, Yosuke; Kiriyama, Ryutaro; Takenaka, Tomoya; Nozaki, Dai; Sato, Fuminobu; Kato, Yushi; Iida, Toshiyuki

2012-01-01

We are constructing a tandem-type electron cyclotron resonance ion source (ECRIS). The first stage of this can supply 2.45 GHz and 11-13 GHz microwaves to plasma chamber individually and simultaneously. We optimize the beam current I FC by the mobile plate tuner. The I FC is affected by the position of the mobile plate tuner in the chamber as like a circular cavity resonator. We aim to clarify the relation between the I FC and the ion saturation current in the ECRIS against the position of the mobile plate tuner. We obtained the result that the variation of the plasma density contributes largely to the variation of the I FC when we change the position of the mobile plate tuner.

Piezotronic effect tuned AlGaN/GaN high electron mobility transistor

Science.gov (United States)

Jiang, Chunyan; Liu, Ting; Du, Chunhua; Huang, Xin; Liu, Mengmeng; Zhao, Zhenfu; Li, Linxuan; Pu, Xiong; Zhai, Junyi; Hu, Weiguo; Wang, Zhong Lin

2017-11-01

The piezotronic effect utilizes strain-induced piezoelectric polarization charges to tune the carrier transportation across the interface/junction. We fabricated a high-performance AlGaN/GaN high electron mobility transistor (HEMT), and the transport property was proven to be enhanced by applying an external stress for the first time. The enhanced source-drain current was also observed at any gate voltage and the maximum enhancement of the saturation current was up to 21% with 15 N applied stress (0.18 GPa at center) at -1 V gate voltage. The physical mechanism of HEMT with/without external compressive stress conditions was carefully illustrated and further confirmed by a self-consistent solution of the Schrödinger-Poisson equations. This study proves the cause-and-effect relationship between the piezoelectric polarization effect and 2D electron gas formation, which provides a tunable solution to enhance the device performance. The strain tuned HEMT has potential applications in human-machine interface and the security control of the power system.

The relation between use of mobile electronic devices and bedtime restistance, sleep duration, and daytime sleepiness among preschoolers

NARCIS (Netherlands)

Nathanson, A.I.; Beyens, I.

2018-01-01

This study investigated the relation between preschoolers’ mobile electronic device (MED) use and sleep disturbances. A national sample of 402 predominantly college-educated and Caucasian mothers of 3–5-year-olds completed a survey assessing their preschoolers’ MED use, bedtime resistance, sleep

Decrease in effective electron mobility in the channel of a metal-oxide-semiconductor transistor as the gate length is decreased

International Nuclear Information System (INIS)

Frantsuzov, A. A.; Boyarkina, N. I.; Popov, V. P.

2008-01-01

Effective electron mobility μ eff in channels of metal-oxide-semiconductor transistors with a gate length L in the range of 3.8 to 0.34 μm was measured; the transistors were formed on wafers of the silicon-oninsulator type. It was found that μ eff decreases as L is decreased. It is shown that this decrease can be accounted for by the effect of series resistances of the source and drain only if it is assumed that there is a rapid increase in these resistances as the gate voltage is decreased. This assumption is difficult to substantiate. A more realistic model is suggested; this model accounts for the observed decrease in μ eff as L is decreased. The model implies that zones with a mobility lower than that in the middle part of the channel originate at the edges of the gate. An analysis shows that, in this case, the plot of the dependence of 1/μ eff on 1/L should be linear, which is exactly what is observed experimentally. The use of this plot makes it possible to determine both the electron mobility μ 0 in the middle part of the channel and the quantity A that characterizes the zones with lowered mobility at the gate’s edges.

The Social & Mobile Learning Experiences of Students Using Mobile E-Books

Science.gov (United States)

Kissinger, Jeff S.

2013-01-01

This research was designed to explore the learning experiences of state college students using mobile electronic textbook (e-book) readers. The purpose of the study was to build a rich description of how students used e-books delivered on mobile computing devices for college-level, introductory

Achieving high carrier mobility exceeding 70 cm2/Vs in amorphous zinc tin oxide thin-film transistors

Science.gov (United States)

Kim, Sang Tae; Shin, Yeonwoo; Yun, Pil Sang; Bae, Jong Uk; Chung, In Jae; Jeong, Jae Kyeong

2017-09-01

This paper proposes a new defect engineering concept for low-cost In- and Ga-free zinc tin oxide (ZTO) thin-film transistors (TFTs). This concept is comprised of capping ZTO films with tantalum (Ta) and a subsequent modest thermal annealing treatment at 200 °C. The Ta-capped ZTO TFTs exhibited a remarkably high carrier mobility of 70.8 cm2/Vs, low subthreshold gate swing of 0.18 V/decade, threshold voltage of -1.3 V, and excellent ION/OFF ratio of 2 × 108. The improvement (> two-fold) in the carrier mobility compared to the uncapped ZTO TFT can be attributed to the effective reduction of the number of adverse tailing trap states, such as hydroxyl groups or oxygen interstitial defects, which stems from the scavenging effect of the Ta capping layer on the ZTO channel layer. Furthermore, the Ta-capped ZTO TFTs showed excellent positive and negative gate bias stress stabilities. [Figure not available: see fulltext.

High Electron Mobility Thin‐Film Transistors Based on Solution‐Processed Semiconducting Metal Oxide Heterojunctions and Quasi‐Superlattices

Science.gov (United States)

Lin, Yen‐Hung; Faber, Hendrik; Labram, John G.; Stratakis, Emmanuel; Sygellou, Labrini; Kymakis, Emmanuel; Hastas, Nikolaos A.; Li, Ruipeng; Zhao, Kui; Amassian, Aram; Treat, Neil D.; McLachlan, Martyn

2015-01-01

High mobility thin‐film transistor technologies that can be implemented using simple and inexpensive fabrication methods are in great demand because of their applicability in a wide range of emerging optoelectronics. Here, a novel concept of thin‐film transistors is reported that exploits the enhanced electron transport properties of low‐dimensional polycrystalline heterojunctions and quasi‐superlattices (QSLs) consisting of alternating layers of In2O3, Ga2O3, and ZnO grown by sequential spin casting of different precursors in air at low temperatures (180–200 °C). Optimized prototype QSL transistors exhibit band‐like transport with electron mobilities approximately a tenfold greater (25–45 cm2 V−1 s−1) than single oxide devices (typically 2–5 cm2 V−1 s−1). Based on temperature‐dependent electron transport and capacitance‐voltage measurements, it is argued that the enhanced performance arises from the presence of quasi 2D electron gas‐like systems formed at the carefully engineered oxide heterointerfaces. The QSL transistor concept proposed here can in principle extend to a range of other oxide material systems and deposition methods (sputtering, atomic layer deposition, spray pyrolysis, roll‐to‐roll, etc.) and can be seen as an extremely promising technology for application in next‐generation large area optoelectronics such as ultrahigh definition optical displays and large‐area microelectronics where high performance is a key requirement. PMID:27660741

Electron-electron interaction in p-SiGe/Ge quantum wells

International Nuclear Information System (INIS)

Roessner, Benjamin; Kaenel, Hans von; Chrastina, Daniel; Isella, Giovanni; Batlogg, Bertram

2005-01-01

The temperature dependent magnetoresistance of high mobility p-SiGe/Ge quantum wells is studied with hole densities ranging from 1.7 to 5.9 x 10 11 cm -2 . At magnetic fields below the onset of quantum oscillations that reflect the high mobility values (up to 75000 cm 2 /Vs), we observe the clear signatures of electron-electron interaction. We compare our experiment with the theory of electron-electron interaction including the Zeeman band splitting. The observed magnetoresistance is well explained as a superposition of band structure induced positive magnetoresistance and the negative magntoresistance due to the electron-electron interaction effect

Development of an electronic medical report delivery system to 3G GSM mobile (cellular) phones for a medical imaging department.

Science.gov (United States)

Lim, Eugene Y; Lee, Chiang; Cai, Weidong; Feng, Dagan; Fulham, Michael

2007-01-01

Medical practice is characterized by a high degree of heterogeneity in collaborative and cooperative patient care. Fast and effective communication between medical practitioners can improve patient care. In medical imaging, the fast delivery of medical reports to referring medical practitioners is a major component of cooperative patient care. Recently, mobile phones have been actively deployed in telemedicine applications. The mobile phone is an ideal medium to achieve faster delivery of reports to the referring medical practitioners. In this study, we developed an electronic medical report delivery system from a medical imaging department to the mobile phones of the referring doctors. The system extracts a text summary of medical report and a screen capture of diagnostic medical image in JPEG format, which are transmitted to 3G GSM mobile phones.

Thermal Analysis of AlGaN/GaN High-Electron-Mobility Transistor and Its RF Power Efficiency Optimization with Source-Bridged Field-Plate Structure.

Science.gov (United States)

Kwak, Hyeon-Tak; Chang, Seung-Bo; Jung, Hyun-Gu; Kim, Hyun-Seok

2018-09-01

In this study, we consider the relationship between the temperature in a two-dimensional electron gas (2-DEG) channel layer and the RF characteristics of an AlGaN/GaN high-electron-mobility transistor by changing the geometrical structure of the field-plate. The final goal is to achieve a high power efficiency by decreasing the channel layer temperature. First, simulations were performed to compare and contrast the experimental data of a conventional T-gate head structure. Then, a source-bridged field-plate (SBFP) structure was used to obtain the lower junction temperature in the 2-DEG channel layer. The peak electric field intensity was reduced, and a decrease in channel temperature resulted in an increase in electron mobility. Furthermore, the gate-to-source capacitance was increased by the SBFP structure. However, under the large current flow condition, the SBFP structure had a lower maximum temperature than the basic T-gate head structure, which improved the device electron mobility. Eventually, an optimum position of the SBFP was used, which led to higher frequency responses and improved the breakdown voltages. Hence, the optimized SBFP structure can be a promising candidate for high-power RF devices.

Landslide mobility and hazards: implications of the 2014 Oso disaster

Science.gov (United States)

Iverson, Richard M.; George, David L.; Allstadt, Kate E.; Reid, Mark E.; Collins, Brian D.; Vallance, James W.; Schilling, Steve P.; Godt, Jonathan W.; Cannon, Charles; Magirl, Christopher S.; Baum, Rex L.; Coe, Jeffrey A.; Schulz, William; Bower, J. Brent

2015-01-01

Landslides reflect landscape instability that evolves over meteorological and geological timescales, and they also pose threats to people, property, and the environment. The severity of these threats depends largely on landslide speed and travel distance, which are collectively described as landslide “mobility”. To investigate causes and effects of mobility, we focus on a disastrous landslide that occurred on 22 March 2014 near Oso, Washington, USA, following a long period of abnormally wet weather. The landslide's impacts were severe because its mobility exceeded that of prior historical landslides at the site, and also exceeded that of comparable landslides elsewhere. The ∼8×106 m3 landslide originated on a gently sloping (landslide began after about 50 s of preliminary slope movement, and observational evidence supports the hypothesis that the high mobility of the landslide resulted from liquefaction of water-saturated sediment at its base. Numerical simulation of the event using a newly developed model indicates that liquefaction and high mobility can be attributed to compression- and/or shear-induced sediment contraction that was strongly dependent on initial conditions. An alternative numerical simulation indicates that the landslide would have been far less mobile if its initial porosity and water content had been only slightly lower. Sensitive dependence of landslide mobility on initial conditions has broad implications for assessment of landslide hazards.

Quinoline-Flanked Diketopyrrolopyrrole Copolymers Breaking through Electron Mobility over 6 cm2 V-1 s-1 in Flexible Thin Film Devices.

Science.gov (United States)

Ni, Zhenjie; Dong, Huanli; Wang, Hanlin; Ding, Shang; Zou, Ye; Zhao, Qiang; Zhen, Yonggang; Liu, Feng; Jiang, Lang; Hu, Wenping

2018-03-01

Herein, the design and synthesis of novel π-extended quinoline-flanked diketopyrrolopyrrole (DPP) [abbreviated as QDPP] motifs and corresponding copolymers named PQDPP-T and PQDPP-2FT for high performing n-type organic field-effect transistors (OFETs) in flexible organic thin film devices are reported. Serving as DPP-flankers in backbones, quinoline is found to effectively tune copolymer optoelectric properties. Compared with TDPP and pyridine-flanked DPP (PyDPP) analogs, widened bandgaps and strengthened electron deficiency are achieved. Moreover, both hole and electron mobility are improved two orders of magnitude compared to those of PyDPP analogs (PPyDPP-T and PPyDPP-2FT). Notably, featuring an all-acceptor-incorporated backbone, PQDPP-2FT exhibits electron mobility of 6.04 cm 2 V -1 s -1 , among the highest value in OFETs fabricated on flexible substrates to date. Moreover, due to the widened bandgap and strengthened electron deficiency of PQDPP, n-channel on/off ratio over 10 5 with suppressed hole transport is first realized in the ambipolar DPP-based copolymers. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Rode's iterative calculation of surface optical phonon scattering limited electron mobility in N-polar GaN devices

International Nuclear Information System (INIS)

Ghosh, Krishnendu; Singisetti, Uttam

2015-01-01

N-polar GaN channel mobility is important for high frequency device applications. Here, we report theoretical calculations on the surface optical (SO) phonon scattering rate of two-dimensional electron gas (2DEG) in N-polar GaN quantum well channels with high-k dielectrics. Rode's iterative calculation is used to predict the scattering rate and mobility. Coupling of the GaN plasmon modes with the SO modes is taken into account and dynamic screening is employed under linear polarization response. The effect of SO phonons on 2DEG mobility was found to be small at >5 nm channel thickness. However, the SO mobility in 3 nm N-polar GaN channels with HfO 2 and ZrO 2 high-k dielectrics is low and limits the total mobility. The SO scattering for SiN dielectric on GaN was found to be negligible due to its high SO phonon energy. Using Al 2 O 3 , the SO phonon scattering does not affect mobility significantly only except the case when the channel is too thin with a low 2DEG density

Field-effect transistors with high mobility and small hysteresis of transfer characteristics based on CH3NH3PbBr3 films

Science.gov (United States)

Aleshin, A. N.; Shcherbakov, I. P.; Trapeznikova, I. N.; Petrov, V. N.

2017-12-01

Field-effect transistor (FET) structures based on soluble organometallic perovskites, CH3NH3PbBr3, were obtained and their electrical properties were studied. FETs made of CH3NH3PbBr3 films possess current- voltage characteristics (IVs) typical for ambipolar FETs with saturation regime. The transfer characteristics of FETs based on CH3NH3PbBr3 have an insignificant hysteresis and slightly depend on voltage at the source-drain. Mobilities of charge carriers (holes) calculated from IVs of FETs based on CH3NH3PbBr3 at 300 K in saturation and weak field regimes were 5 and 2 cm2/V s, respectively, whereas electron mobility is 3 cm2/V s, which exceeds the mobility value 1 cm2/V s obtained earlier for FETs based on CH3NH3PbI3.

Influence of a drain field plate on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor

International Nuclear Information System (INIS)

Zhao Sheng-Lei; Yue Tong; Wang Yi; Luo Jun; Mao Wei; Ma Xiao-Hua; Hao Yue; Chen Wei-Wei

2013-01-01

In this paper, the influence of a drain field plate (FP) on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor (HEMT) is investigated. The HEMT with only a gate FP is optimized, and breakdown voltage V BR is saturated at 1085 V for gate—drain spacing L GD ≥ 8 μm. On the basis of the HEMT with a gate FP, a drain FP is added with L GD = 10 μm. For the length of the drain FP L DF ≤ 2 μm, V BR is almost kept at 1085 V, showing no degradation. When L DF exceeds 2 μm, V BR decreases obviously as L DF increases. Moreover, the larger the L DF , the larger the decrease of V BR . It is concluded that the distance between the gate edge and the drain FP edge should be larger than a certain value to prevent the drain FP from affecting the forward blocking voltage and the value should be equal to the L GD at which V BR begins to saturate in the first structure. The electric field and potential distribution are simulated and analyzed to account for the decrease of V BR

[Design and Implementation of a Mobile Operating Room Information Management System Based on Electronic Medical Record].

Science.gov (United States)

Liu, Baozhen; Liu, Zhiguo; Wang, Xianwen

2015-06-01

A mobile operating room information management system with electronic medical record (EMR) is designed to improve work efficiency and to enhance the patient information sharing. In the operating room, this system acquires the information from various medical devices through the Client/Server (C/S) pattern, and automatically generates XML-based EMR. Outside the operating room, this system provides information access service by using the Browser/Server (B/S) pattern. Software test shows that this system can correctly collect medical information from equipment and clearly display the real-time waveform. By achieving surgery records with higher quality and sharing the information among mobile medical units, this system can effectively reduce doctors' workload and promote the information construction of the field hospital.

Thermal instability and the growth of the InGaAs/AlGaAs pseudomorphic high electron mobility transistor system

International Nuclear Information System (INIS)

Pellegrino, Joseph G.; Qadri, Syed B.; Mahadik, Nadeemullah A.; Rao, Mulpuri V.; Tseng, Wen F.; Thurber, Robert; Gajewski, Donald; Guyer, Jonathan

2007-01-01

The effects of temperature overshoot during molecular beam epitaxy growth on the transport properties of conventionally and delta-doped pseudomorphic high electron mobility transistor (pHEMT) structures have been examined. A diffuse reflectance spectroscopy (DRS)-controlled versus a thermocouple (TC)-controlled, growth scheme is compared. Several advantages of the DRS-grown pHEMTs over the TC-controlled version were observed. Modest improvements in mobility, on the order of 2%-3%, were observed in addition to a 20% reduction in carrier freeze-out for the DRS-grown pHEMTs at 77 K

Mobile Applications and 4G Wireless Networks: A Framework for Analysis

Science.gov (United States)

Yang, Samuel C.

2012-01-01

Purpose: The use of mobile wireless data services continues to increase worldwide. New fourth-generation (4G) wireless networks can deliver data rates exceeding 2 Mbps. The purpose of this paper is to develop a framework of 4G mobile applications that utilize such high data rates and run on small form-factor devices. Design/methodology/approach:…

Cyclotron resonance spectroscopy of a high-mobility two-dimensional electron gas from 0.4 to 100 K at high filling factors

Energy Technology Data Exchange (ETDEWEB)

Curtis, Jeremy A. [Univ. of Alabama, Birmingham, AL (United States); Tokumoto, Takahisa [Univ. of Alabama, Birmingham, AL (United States); Cherian, Judy G. [Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab); Kuno, J. [Rice Univ., Houston, TX (United States); Reno, John L. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); McGill, Stephen A. [Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab); Karaiskaj, Denis [Univ. of South Florida, Tampa, FL (United States); Hilton, David J. [Univ. of Alabama, Birmingham, AL (United States)

2015-10-01

We have studied the cyclotron mobility of a Landau-quantized two-dimensional electron gas as a function of temperature (0.4 --100 K) at a fixed magnetic field (1.25 T) using terahertz time-domain spectroscopy in a sample with a low frequency mobility of μ_dc = 3.6 x 10⁶ cm² V^-1 s^-1 and a carrier concentration of ns = 2 x 10₆ cm^-2. The low temperature mobility in this sample results from both impurity scattering and acoustic deformation potential scattering, with μ$-1\\atop{CR}$ ≈ (2.1 x 10⁵ cm² V^-1 s^-1)^-1 + (3.8 x 10^-8 V sK^-1 cm^-2 x T)^-1 at low temperatures. Above 50 K, the cyclotron oscillations show a strong reduction in both the oscillation amplitude and lifetime that is dominated by the contribution due to polar optical phonons. These results suggest that electron dephasing times as long as ~ 300 ps are possible even at this high lling factor (v = 6:6) in higher mobility samples (> 10⁷ cm² V^-1 s^-1) that have lower impurity concentrations and where the cyclotron mobility at this carrier concentration would be limited by acoustic deformation potential scattering.

The operation cutoff frequency of high electron mobility transistor measured by terahertz method

International Nuclear Information System (INIS)

Zhu, Y. M.; Zhuang, S. L.

2014-01-01

Commonly, the cutoff frequency of high electron mobility transistor (HEMT) can be measured by vector network analyzer (VNA), which can only measure the sample exactly in low frequency region. In this paper, we propose a method to evaluate the cutoff frequency of HEMT by terahertz (THz) technique. One example shows the cutoff frequency of our HEMT is measured at ∼95.30 GHz, which is reasonable agreement with that estimated by VNA. It is proved THz technology a potential candidate for the substitution of VNA for the measurement of high-speed devices even up to several THz.

On-site installation and shielding of a mobile electron accelerator for radiation processing

International Nuclear Information System (INIS)

Catana, D.; Panaitescu, J.; Axinescu, S.; Manolache, D.; Matei, C.; Corcodel, C.; Ulmeanu, M..; Bestea, V.

1995-01-01

The development of radiation processing of some bulk products, e.g. grains or potatoes, would be sustained if the irradiation had been carried out at the place of storage, i.e. silo. A promising solution is proposed consisting of a mobile electron accelerator, installed on a couple of trucks and traveling from one customer to another. The energy of the accelerated electrons was chosen at 5 MeV, with 10 to 50 kW beam power. The irradiation is possible either with electrons or with bremsstrahlung. A major problem of the above solution is the provision of adequate shielding at the customer, with a minimum investment cost. Plans for a bunker are presented, which houses the truck carrying the radiation head. The beam is vertical downwards, through the truck floor, through a transport pipe and a scanning horn. The irradiation takes place in a pit, where the products are transported through a belt. The belt path is so chosen as to minimize openings in the shielding. Shielding calculations are presented supposing a working regime with 5 MeV bremsstrahlung. Leakage and scattered radiation are taken into account. (orig.)

On-site installation and shielding of a mobile electron accelerator for radiation processing

Energy Technology Data Exchange (ETDEWEB)

Catana, D. [Institutul de Fizica Atomica, Bucharest (Romania); Panaitescu, J. [Institutul de Fizica Atomica, Bucharest (Romania); Axinescu, S. [Institutul de Fizica Atomica, Bucharest (Romania); Manolache, D. [Institutul de Fizica Atomica, Bucharest (Romania); Matei, C. [Institutul de Fizica Atomica, Bucharest (Romania); Corcodel, C. [Institutul de Fizica Atomica, Bucharest (Romania); Ulmeanu, M.. [Institutul de Fizica Atomica, Bucharest (Romania); Bestea, V. [Institutul de Fizica Atomica, Bucharest (Romania)

1995-05-01

The development of radiation processing of some bulk products, e.g. grains or potatoes, would be sustained if the irradiation had been carried out at the place of storage, i.e. silo. A promising solution is proposed consisting of a mobile electron accelerator, installed on a couple of trucks and traveling from one customer to another. The energy of the accelerated electrons was chosen at 5 MeV, with 10 to 50 kW beam power. The irradiation is possible either with electrons or with bremsstrahlung. A major problem of the above solution is the provision of adequate shielding at the customer, with a minimum investment cost. Plans for a bunker are presented, which houses the truck carrying the radiation head. The beam is vertical downwards, through the truck floor, through a transport pipe and a scanning horn. The irradiation takes place in a pit, where the products are transported through a belt. The belt path is so chosen as to minimize openings in the shielding. Shielding calculations are presented supposing a working regime with 5 MeV bremsstrahlung. Leakage and scattered radiation are taken into account. (orig.).

GSM-PKI solution enabling secure mobile communications.

Science.gov (United States)

Jelekäinen, Pekka

2004-03-31

Because of its wide distribution and ease of use, the mobile phone, as a reliable personal communications channel, offers an excellent basis for the provision of reliable electronic communications services. In Finland, ca. 75% of the citizens have a mobile phone and, at present and most likely also in the future, it is the most widely spread service channel allowing reliable electronic communications. Despite the restricted functions of the mobile phone, the citizens can use the phone also as a communications medium. In 2001, the Finns sent over 1 billion SMS messages. In Finland, TeliaSonera Finland Oyi and the Population Register Centre (PRC) have closed a co-operation agreement with the aim of creating a mobile phone service for the electronic identification of a person. The co-operation launched is a significant development project from the perspective of the citizens. As a result, the consumers will have a new alternative for reliable electronic communications and commerce in data networks in addition to the electronic identification card. In the future, it will be possible to use the services of both public administration and the private sector by means of a mobile phone more reliably than before, without a physical visit, e.g. to a health centre or to another provider of healthcare services. The possibility of identification and signature by a mobile phone allows an easier provision of versatile services irrespective of time and place, because, in addition to voice, text message, and WAP functions, the service can be utilised also in communications services through the Internet, in which case, the mobile phone acts like a card reader. From the perspective of reliable personal mobile communications, the healthcare sector is one of the most significant and challenging application areas.

Jupiter's Auroral Energy Input Observed by Hisaki/EXCEED and its Modulations by Io's Volcanic Activity

Science.gov (United States)

Tao, C.; Kimura, T.; Tsuchiya, F.; Murakami, G.; Yoshioka, K.; Kita, H.; Yamazaki, A.; Kasaba, Y.; Yoshikawa, I.; Fujimoto, M.

2016-12-01

Aurora is an important indicator representing the momentum transfer from the fast-rotating outer planet to the magnetosphere and the energy input into the atmosphere through the magnetosphere-ionosphere coupling. Long-term monitoring of Jupiter's northern aurora was achieved by the Extreme Ultraviolet (EUV) spectrometer called EXCEED (Extreme Ultraviolet Spectroscope for Exospheric Dynamics) onboard JAXA's Earth-orbiting planetary space telescope Hisaki until today after its launch in September 2013. We have proceeded the statistical survey of the Jupiter's auroral energy input into the upper atmosphere. The auroral electron energy is estimated using a hydrocarbon color ratio (CR) adopted for the wavelength range of EXCEED, and the emission power in the long wavelength range 138.5-144.8 nm is used as an indicator of total emitted power before hydrocarbon absorption and auroral electron energy flux. Temporal dynamic variation of the auroral intensity was detected when Io's volcanic activity and thus EUV emission from the Io plasma torus are enhanced in the early 2015. Average of the total input power over 80 days increases by 10% with sometimes sporadically more than a factor of 3 upto 7, while the CR indicates the auroral electron energy decrease by 20% during the volcanic event compared to the other period. This indicates much more increase in the current system and Joule heating which contributes heating of the upper atmosphere. We will discuss the impact of this event on the upper atmosphere and ionosphere.

A New XOR Structure Based on Resonant-Tunneling High Electron Mobility Transistor

Directory of Open Access Journals (Sweden)

Mohammad Javad Sharifi

2009-01-01

Full Text Available A new structure for an exclusive-OR (XOR gate based on the resonant-tunneling high electron mobility transistor (RTHEMT is introduced which comprises only an RTHEMT and two FETs. Calculations are done by utilizing a new subcircuit model for simulating the RTHEMT in the SPICE simulator. Details of the design, input, and output values and margins, delay of each transition, maximum operating frequency, static and dynamic power dissipations of the new structure are discussed and calculated and the performance is compared with other XOR gates which confirm that the presented structure has a high performance. Furthermore, to the best of authors' knowledge, it has the least component count in comparison to the existing structures.

Analysis about the development of mobile electronic commerce: An application of production possibility frontier model

OpenAIRE

Uesugi, Shiro; Okada, Hitoshi

2012-01-01

This study aims to further develop our previous research on production possibility frontier model (PPFM). An application of model to provide analysis on the mobile commerce survey for which data was collected in Japan und Thailand is presented. PPFM looks into the consumer behaviors as the results form the perception on the relationship between Convenience and Privacy Concerns of certain electronic commerce services. From the data of consumer surveys, PPFM is expected to provide practical sol...

Best Sale Mobile Application

OpenAIRE

Chittugnanamoorthy, Balakumar

2014-01-01

The aim of this thesis was to find a best way to advertise short-term sales and reduce paper waste. Another aim was to help the seller to identify a potential customer for a specific product, by means of providing a number of people accessing an advertisement. A mobile phone is one of the widely used electronic devices by many people. Modern mobile phones support a good internet connection. Also, people carry their mobile devices with them even outside their homes. So a mobile application ...

The Effects of Trust Transference, Mobile Attributes and Enjoyment on Mobile Trust

Directory of Open Access Journals (Sweden)

Cristiane Junqueira Giovannini

2015-01-01

Full Text Available Trust is essential in building relationships. In mobile commerce, as in electronic commerce, trust is even more valuable given the absence of human contact and direct observation of the service provider. Despite the importance of trust for mobile commerce, there has been little academic effort to study the relationships between mobile devices unique components of interactivity and customer trust, or the relationship between offline, online and mobile trust. This study proposes a trust-mediated model for customer attitude and transaction intentions in mobile commerce contexts that incorporates trust transference and unique factors present in mobile commerce. Data were collected in an online survey and analyzed via structural equations modeling. Results suggest that trust transferred from online contexts and ease of use have significant effects on mobile trust formation, while also indicating that mobile trust influences consumers’ attitudes and intentions to purchase using mobile devices.

Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

He, X.G. [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Zhao, D.G., E-mail: dgzhao@red.semi.ac.cn [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Jiang, D.S.; Liu, Z.S.; Chen, P.; Le, L.C.; Yang, J.; Li, X.J. [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Zhang, S.M.; Zhu, J.J.; Wang, H.; Yang, H. [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125 (China)

2014-08-01

GaN films were grown by metal-organic chemical vapor deposition (MOCVD) under various growth conditions. The influences of MOCVD growth parameters, i.e., growth pressure, ammonia (NH{sub 3}) flux, growth temperature, trimethyl-gallium flux and H{sub 2} flux, on residual carbon concentration ([C]) were systematically investigated. Secondary ion mass spectroscopy measurements show that [C] can be effectively modulated by growth conditions. Especially, it can increase by reducing growth pressure up to two orders of magnitude. High-resistance (HR) GaN epilayer with a resistivity over 1.0 × 10{sup 9} Ω·cm is achieved by reducing growth pressure. The mechanism of the formation of HR GaN epilayer is discussed. An Al{sub x}Ga{sub 1−x}N/GaN high electron mobility transistor structure with a HR GaN buffer layer and an additional low-carbon GaN channel layer is presented, exhibiting a high two dimensional electron gas mobility of 1815 cm{sup 2}/Vs. - Highlights: • Influence of MOCVD parameters on residual carbon concentration in GaN is studied. • GaN layer with a resistivity over 1 × 10{sup 9} Ω·cm is achieved by reducing growth pressure. • High electron mobility transistor (HEMT) structures were prepared. • Control of residual carbon content results in HEMT with high 2-D electron gas mobility.

Mobile Arbeitswelten und Soziale Gestaltung: Electronic Mobility: Thesen und Empfehlungen. Vortrag gehalten auf dem Kongress "e-mobility - Mobile Arbeitswelten" 2005, Berlin

OpenAIRE

Rump, J.; Balfanz, D.; Porak, A.; Schröter, W.

2005-01-01

Die Arbeitswelten der Informations- und Wissensgesellschaft befinden sich bereits seit längerer Zeit im Wandel. Das Internet sowie neue Technologien der Mobiltelefonie und der mobilen Datenübertragung ermöglichen den ubiquitären Einsatz von Lösungen, welche helfen, das Arbeitsleben der Menschen mobil, flexibel und vernetzt zu gestalten. Zugleich wird das (Arbeits-)Leben dadurch jedoch unsteter, unsicherer" und unberechenbarer. Tatsache ist, dass der Einsatz neuer mobiler Technologien die Rahm...

High Magnetic Field in THz Plasma Wave Detection by High Electron Mobility Transistors

Science.gov (United States)

Sakowicz, M.; Łusakowski, J.; Karpierz, K.; Grynberg, M.; Valusis, G.

The role of gated and ungated two dimensional (2D) electron plasma in THz detection by high electron mobility transistors (HEMTs) was investigated. THz response of GaAs/AlGaAs and GaN/AlGaN HEMTs was measured at 4.4K in quantizing magnetic fields with a simultaneous modulation of the gate voltage UGS. This allowed us to measure both the detection signal, S, and its derivative dS/dUGS. Shubnikov - de-Haas oscillations (SdHO) of both S and dS/dUGS were observed. A comparison of SdHO observed in detection and magnetoresistance measurements allows us to associate unambiguously SdHO in S and dS/dUGS with the ungated and gated parts of the transistor channel, respectively. This allows us to conclude that the entire channel takes part in the detection process. Additionally, in the case of GaAlAs/GaAs HEMTs, a structure related to the cyclotron resonance transition was observed.

Resonant tunneling assisted propagation and amplification of plasmons in high electron mobility transistors

International Nuclear Information System (INIS)

Bhardwaj, Shubhendu; Sensale-Rodriguez, Berardi; Xing, Huili Grace; Rajan, Siddharth; Volakis, John L.

2016-01-01

A rigorous theoretical and computational model is developed for the plasma-wave propagation in high electron mobility transistor structures with electron injection from a resonant tunneling diode at the gate. We discuss the conditions in which low-loss and sustainable plasmon modes can be supported in such structures. The developed analytical model is used to derive the dispersion relation for these plasmon-modes. A non-linear full-wave-hydrodynamic numerical solver is also developed using a finite difference time domain algorithm. The developed analytical solutions are validated via the numerical solution. We also verify previous observations that were based on a simplified transmission line model. It is shown that at high levels of negative differential conductance, plasmon amplification is indeed possible. The proposed rigorous models can enable accurate design and optimization of practical resonant tunnel diode-based plasma-wave devices for terahertz sources, mixers, and detectors, by allowing a precise representation of their coupling when integrated with other electromagnetic structures

Landslide mobility and hazards: implications of the 2014 Oso disaster

Science.gov (United States)

Iverson, R. M.; George, D. L.; Allstadt, K.; Reid, M. E.; Collins, B. D.; Vallance, J. W.; Schilling, S. P.; Godt, J. W.; Cannon, C. M.; Magirl, C. S.; Baum, R. L.; Coe, J. A.; Schulz, W. H.; Bower, J. B.

2015-02-01

Landslides reflect landscape instability that evolves over meteorological and geological timescales, and they also pose threats to people, property, and the environment. The severity of these threats depends largely on landslide speed and travel distance, which are collectively described as landslide "mobility". To investigate causes and effects of mobility, we focus on a disastrous landslide that occurred on 22 March 2014 near Oso, Washington, USA, following a long period of abnormally wet weather. The landslide's impacts were severe because its mobility exceeded that of prior historical landslides at the site, and also exceeded that of comparable landslides elsewhere. The ∼ 8 ×106 m3 landslide originated on a gently sloping (<20°) riverside bluff only 180 m high, yet it traveled across the entire ∼1 km breadth of the adjacent floodplain and spread laterally a similar distance. Seismological evidence indicates that high-speed, flowing motion of the landslide began after about 50 s of preliminary slope movement, and observational evidence supports the hypothesis that the high mobility of the landslide resulted from liquefaction of water-saturated sediment at its base. Numerical simulation of the event using a newly developed model indicates that liquefaction and high mobility can be attributed to compression- and/or shear-induced sediment contraction that was strongly dependent on initial conditions. An alternative numerical simulation indicates that the landslide would have been far less mobile if its initial porosity and water content had been only slightly lower. Sensitive dependence of landslide mobility on initial conditions has broad implications for assessment of landslide hazards.

Large wood mobility processes in low-order Chilean river channels

Science.gov (United States)

Iroumé, Andrés; Mao, Luca; Andreoli, Andrea; Ulloa, Héctor; Ardiles, María Paz

2015-01-01

Large wood (LW) mobility was studied over several time periods in channel segments of four low-order mountain streams, southern Chile. All wood pieces found within the bankfull channels and on the streambanks extending into the channel with dimensions more than 10 cm in diameter and 1 m in length were measured and their position was referenced. Thirty six percent of measured wood pieces were tagged to investigate log mobility. All segments were first surveyed in summer and then after consecutive rainy winter periods. Annual LW mobility ranged between 0 and 28%. Eighty-four percent of the moved LW had diameters ≤ 40 cm and 92% had lengths ≤ 7 m. Large wood mobility was higher in periods when maximum water level (Hmax) exceeded channel bankfull depth (HBk) than in periods with flows less than HBk, but the difference was not statistically significant. Dimensions of moved LW showed no significant differences between periods with flows exceeding and with flows less than bankfull stage. Statistically significant relationships were found between annual LW mobility (%) and unit stream power (for Hmax) and Hmax/HBk. The mean diameter of transported wood pieces per period was significantly correlated with unit stream power for H15% and H50% (the level above which the flow remains for 15 and 50% of the time, respectively). These results contribute to an understanding of the complexity of LW mobilization processes in mountain streams and can be used to assess and prevent potential damage caused by LW mobilization during floods.

Anelastic relaxation study of the atom mobility in a Ag-Zn alloy under an electron flux

International Nuclear Information System (INIS)

Halbwachs, M.; Hillairet, J.; Beretz, D.; Cost, J.R.

1976-01-01

The transient phenomena occuring at flux setting of collapsing in a fcc AgZn (Ag 30%) alloy were directly investigated under electron irradiation. The atom mobility was measured from the inelastic relaxation associated with the reversible stress-induced short-order changes (Zener relaxation). The interstitial mobility can be evaluated with respect to that of the vacancy, that is 5x10 5 jumps/s at 40 deg C and corresponds to an activation energy of 0.54eV. It is about twenty times higher than that of the vacancy and may be described by an activation energy of 0.45+-0.04eV. Furthermore, the rate of free defect production is shown to be approximately equal to 6x10 -12 Frenkel pairs per second [fr

Universality of electron mobility in LaAlO₃/SrTiO₃ and bulk SrTiO₃

DEFF Research Database (Denmark)

Trier, Felix; Reich, K. V.; Christensen, Dennis Valbjørn

2017-01-01

Metallic LaAlO3/SrTiO3 (LAO/STO) interfaces attract enormous attention, but the relationship between the electron mobility and the sheet electron density, ns, is poorly understood. Here, we derive a simple expression for the three-dimensional electron density near the interface, n3D, as a function...

Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations.

Science.gov (United States)

Lee, H-P; Perozek, J; Rosario, L D; Bayram, C

2016-11-21

AlGaN/GaN high electron mobility transistor (HEMT) structures are grown on 200-mm diameter Si(111) substrates by using three different buffer layer configurations: (a) Thick-GaN/3 × {Al x Ga 1-x N}/AlN, (b) Thin-GaN/3 × {Al x Ga 1-x N}/AlN, and (c) Thin-GaN/AlN, so as to have crack-free and low-bow (GaN HEMT structures. The effects of buffer layer stacks (i.e. thickness and content) on defectivity, stress, and two-dimensional electron gas (2DEG) mobility and 2DEG concentration are reported. It is shown that 2DEG characteristics are heavily affected by the employed buffer layers between AlGaN/GaN HEMT structures and Si(111) substrates. Particularly, we report that in-plane stress in the GaN layer affects the 2DEG mobility and 2DEG carrier concentration significantly. Buffer layer engineering is shown to be essential for achieving high 2DEG mobility (>1800 cm 2 /V∙s) and 2DEG carrier concentration (>1.0 × 10 13  cm -2 ) on Si(111) substrates.

Investigation of surface related leakage current in AlGaN/GaN High Electron Mobility Transistors

Energy Technology Data Exchange (ETDEWEB)

Kaushik, J.K., E-mail: janeshkaushik@sspl.drdo.in [Solid State Physics Laboratory, Delhi 110054 (India); Balakrishnan, V.R.; Mongia, D.; Kumar, U.; Dayal, S. [Solid State Physics Laboratory, Delhi 110054 (India); Panwar, B.S. [Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016 (India); Muralidharan, R. [Indian Institute of Science, Bengaluru, Karnataka 560012 (India)

2016-08-01

This paper reports the study of surface-related mechanisms to explain the high reverse leakage current observed in the in-house fabricated Si{sub 3}N{sub 4} passivated AlGaN/GaN High Electron Mobility Transistors. We propose that the Si{sub 3}N{sub 4}/AlGaN interface in the un-gated regions provides an additional leakage path between the gate and source/drain and may constitute a large component of reverse current. This surface related leakage component of current exhibits both temperature and electric field dependence and its Arrhenius behavior has been experimentally verified using Conductance Deep Level Transient Spectroscopy and temperature dependent reverse leakage current measurements. A thin interfacial amorphous semiconductor layer formed due to inter diffusion at Si{sub 3}N{sub 4}/AlGaN interface has been presumed as the source for this surface related leakage. We, therefore, conclude that optimum Si{sub 3}N{sub 4} deposition conditions and careful surface preparation prior to passivation can limit the extent of surface leakage and can thus vastly improve the device performance. - Highlights: • Enhanced leakage in AlGaN/GaN High Electron Mobility Transistors after passivation • Experimental evidence of the presence of extrinsic traps at Si{sub 3}N{sub 4}/AlGaN interface • Electron hopping in shallower extended defects and band tail traps at the interface. • Reduction in current collapse due to the virtual gate inhibition by this conduction • However, limitation on the operating voltages due to decrease in breakdown voltage.

Situated learning in the mobile age: mobile devices on a field trip to the sea

Directory of Open Access Journals (Sweden)

Vanessa D.I. Pfeiffer

2009-12-01

Full Text Available This study focuses on learning about fish biodiversity via mobile devices in a situated learning scenario. Mobile devices do not only facilitate relating the presented information to the real world in a direct way; they also allow the provision of dynamic representations on demand. This study asks whether mobile devices are suited to support knowledge acquisition in a situated learning scenario and whether providing dynamic content is an additional benefit of mobile devices in combination with a real-world experience. The study was conducted during a regular university course at the Mediterranean Sea. Students had to acquire knowledge on 18 Mediterranean fish species by using either static (n = 16 or dynamic learning materials (n = 17. An initial classroom activity was followed by a real-world experience with mobile devices (snorkelling activity. Learning outcomes were measured before and after snorkelling. A 2×2 mixed ANOVA revealed that students performed better after than before the mobile learning experience, whereas no main effect for learning material could be found. However, an interaction between both factors indicated that the knowledge gain in the dynamic group exceeded the knowledge gain in the static group. These results indicate that mobile devices are helpful to unfold the potential of dynamic visualisations for learning biodiversity in a situated learning scenario.

Fabrication and characterization of V-gate AlGaN/GaN high-electron-mobility transistors

International Nuclear Information System (INIS)

Zhang Kai; Cao Meng-Yi; Chen Yong-He; Yang Li-Yuan; Wang Chong; Ma Xiao-Hua; Hao Yue

2013-01-01

V-gate GaN high-electron-mobility transistors (HEMTs) are fabricated and investigated systematically. A V-shaped recess geometry is obtained using an improved Si 3 N 4 recess etching technology. Compared with standard HEMTs, the fabricated V-gate HEMTs exhibit a 17% higher peak extrinsic transconductance due to a narrowed gate foot. Moreover, both the gate leakage and current dispersion are dramatically suppressed simultaneously, although a slight degradation of frequency response is observed. Based on a two-dimensional electric field simulation using Silvaco “ATLAS” for both standard HEMTs and V-gate HEMTs, the relaxation in peak electric field at the gate edge is identified as the predominant factor leading to the superior performance of V-gate HEMTs. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

THE RISE OF MOBILE BANKING

Directory of Open Access Journals (Sweden)

IMOLA DRIGĂ

2015-12-01

Full Text Available To meet customer’s expectations and needs, electronic banking services have allowed financial transactions to simplify and have increased their attractiveness. Over the past few year, in order to increase customer comfort and maintain profitability, banks around the world have adopted innovative banking technologies and modern e-banking services, such as internet and mobile banking. As a matter of fact, banking over mobile phones is the newest e-banking service with several benefits for both customers and banks. The paper aims to provide an overview of the latest electronic financial channel, underlining various aspects of mobile banking as it represents a key distribution channel for a growing number of customers.

Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces via charge transfer induced modulation doping

DEFF Research Database (Denmark)

Chen, Yunzhong; Trier, Felix; Wijnands, T.

2015-01-01

as applied research of complex oxides. Here, we inserted a single unit cell insulating layer of polar La1-xSrxMnO3 (x=0, 1/8, and 1/3) at the interface between disordered LaAlO3 and crystalline SrTiO3 created at room temperature. We find that the electron mobility of the interfacial 2DEG is enhanced by more...

Comparison of Surface Passivation Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors (HEMTs)

National Research Council Canada - National Science Library

Fitch, R

2002-01-01

Three different passivation layers (SiN(x), MgO, and Sc2O3) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs...

Effect of surface passivation by SiN/SiO2 of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method

International Nuclear Information System (INIS)

Gassoumi, Malek; Mosbahi, Hana; Zaidi, Mohamed Ali; Gaquiere, Christophe; Maaref, Hassen

2013-01-01

Device performance and defects in AlGaN/GaN high-electron mobility transistors have been correlated. The effect of SiN/SiO 2 passivation of the surface of AlGaN/GaN high-electron mobility transistors on Si substrates is reported on DC characteristics. Deep level transient spectroscopy (DLTS) measurements were performed on the device after the passivation by a (50/100 nm) SiN/SiO 2 film. The DLTS spectra from these measurements showed the existence of the same electron trap on the surface of the device

Electrical resistivity, Hall coefficient and electronic mobility in indium antimonide at different magnetic fields and temperatures

International Nuclear Information System (INIS)

Jee, Madan; Prasad, Vijay; Singh, Amita

1995-01-01

The electrical resistivity, Hall coefficient and electronic mobility of n-type and p-type crystals of indium antimonide have been measured from 25 degC-100 degC temperature range. It has been found by this measurement that indium antimonide is a compound semiconductor with a high mobility 10 6 cm 2 /V.S. The Hall coefficient R H was measured as a function of magnetic field strength H for a number of samples of both p and n-type using fields up to 12 kilo gauss. The Hall coefficient R h decreases with increasing magnetic fields as well as with increase in temperature of the sample. The electric field is more effective on samples with high mobilities and consequently the deviations from linearity are manifested at comparatively low values of the electric field. The measurement of R H in weak and strong magnetic fields makes it possible to determine the separate concentration of heavy and light holes. Measured values of Hall coefficient and electrical resistivity show that there is a little variation of ρ and R h with temperatures as well as with magnetic fields. (author). 12 refs., 5 tabs

Study of point defect mobilities in zirconium during electron irradiation in a HVEM

International Nuclear Information System (INIS)

Griffiths, M.

1993-01-01

A high voltage electron microscope (HVEM) was used to investigate the nature of intrinsic point defects in α-Zr by direct observation of dislocation climb and cavity growth or shrinkage. The material used was Marz-grade Zr that had been pre-irradiated with neutrons at about 740 K in the Dounreay Fast Reactor. Dislocation loops of vacancy character that had been produced during the neutron irradiation were studied by further irradiation with electrons in the HVEM. Growth of the loops was observed at temperatures as low as 230 K, indicating that, under the conditions of the experiment, some vacancy-type defects were mobile in the temperature regime 230 K-300 K. The nature of these defects is unknown. One possibility is that these defects are not intrinsic in nature, but may be vacancy-Fe complexes. In addition to the climb of dislocation loops, c-component network dislocations and cavities were also studied. Basal plane climb of the network dislocations was observed at 573 K, but was not readily apparent at 320 K. This suggests that preferred climb planes (and possibly loop habit planes) are sensitive to temperature. Cavities that were already in the foil after neutron irradiation or were induced by electron irradiation grew along the c-axis and shrank along a-directions during electron irradiation. This radiation-induced shape change of the cavities strongly suggests the existence of a diffusional anisotropy difference between interstitials and vacancies in α-Zr. (Author) 14 figs., 22 refs

Finishing of display glass for mobile electronics using 3M Trizact diamond tile abrasive pads

Science.gov (United States)

Zheng, Lianbin; Fletcher, Tim; Na, Tee Koon; Sventek, Bruce; Romero, Vince; Lugg, Paul S.; Kim, Don

2010-10-01

This paper will describe a new method being used during the finishing of glass displays for mobile electronics including mobile hand held devices and notebook computers. The new method consists of using 3M TrizactTM Diamond Tile Abrasive Pads. TrizactTM Diamond Tile is a structured fixed abrasive grinding technology developed by 3M Company. The TrizactTM Diamond Tile structured abrasive pad consists of an organic (polymeric binder) - inorganic (abrasive mineral, i.e., diamond) composite that is used with a water-based coolant. TrizactTM Diamond Tile technology can be applied in both double and single side grinding applications. A unique advantage of TrizactTM Diamond Tile technology is the combination of high stock removal and low sub-surface damage. Grinding results will be presented for both 9 micron and 20 micron grades of TrizactTM Diamond Tile abrasive pads used to finish several common display glasses including Corning GorillaTM glass and Soda Lime glass.

Calculated carrier mobility of h-BN/γ-InSe/h-BN van der Waals heterostructures

Science.gov (United States)

Kang, P.; Michaud-Rioux, V.; Kong, X.-H.; Yu, G.-H.; Guo, H.

2017-12-01

Recent experiments reported excellent transport properties of two-dimensional (2D) van der Waals (vdW) heterostructures made of atomically thin InSe layers encapsulated by two hBN capping layers (ISBN). The carrier mobility of the ISBN films exceeded μ ˜ 1.2× {{10}4} \\text{c}{{\\text{m}}2} {{\\text{V}}-1} {{\\text{s}}-1} at low temperature, much higher than that of pristine InSe films. It has been puzzling why the relatively inert hBN capping layer could so drastically enhance mobility of the ISBN composite. Using a state-of-the-art first principles method, we have calculated phonon limited carrier mobility of 18 different ISBN films and 6 pristine InSe films with different thicknesses, the largest system containing 2212 atoms. The hBN capping layer significantly alters the elastic stiffness coefficient as compared with pure InSe—thus the acoustic phonons in the ISBN composite—giving rise to the observed large mobility of ISBN films. Of the 18 calculated ISBN films, the ones with no strain at the hBN/InSe interface possess the highest electron mobility, reaching 4340~\\text{c}{{\\text{m}}2}~{{\\text{V}}-1}~{{\\text{s}}-1} at room temperature, which could easily go over {{10}4}~\\text{c}{{\\text{m}}2}~{{\\text{V}}-1}~{{\\text{s}}-1} at low temperatures. We conclude that the mechanical properties of the composite 2D vdW ISBN material play the crucial role for inducing the large carrier mobility, a principle that could be applied to many other 2D vdW heterostructures.

Detection of Traffic Initiated by Mobile Malware Targeting Android Devices in 3GPP Networks

OpenAIRE

Kühnel, Marián

2017-01-01

Android devices have become the most popular of mobile devices; omnipresent in both business and private use. They are virtually always on and offer functionalities exceeding those of desktop computers. These properties, as well as sensitive information stored on Android devices, render them an attractive target for mobile malware authors. As the volume of mobile malware increases, analysis is becoming challenging and, sometimes, infeasible. Additionally, current network-based intrusion detec...

Sustainable mobility in Slovenian Julian Alps

Directory of Open Access Journals (Sweden)

Matej Ogrin

2012-12-01

Full Text Available Some mountainous areas, especially tourist areas, are facing traffc loads that exceed the carrying capacity and bring problems to local residents, visitors, public services, etc. Traf-fc problems can also cause a decrease of popularity of the tourist site and a decrease of tourist income therefore, in some Alpine areas in Slovenia, measures have begun to be taken to decrease traffc loads, and to support measures of sustainable mobility. This article deals with such measures and plans that have been taken in the Julian Alps of Slovenia to decrease the negative traffc impacts of tourism mobility in the municipalities of Kranjska Gora, Bohinj and Bovec.

Alternative Data Storage Solution for Mobile Messaging Services

Directory of Open Access Journals (Sweden)

David C. C. Ong

2007-01-01

Full Text Available In recent years, mobile devices have become relatively more powerful with additional features which have the capability to provide multimedia streaming. Better, faster and more reliable data storage solutions in the mobile messaging platform have become more essential with these additional improvements. The existing mobile messaging infrastructure, in particular the data storage platform has become less proficient in coping with the increased demand for its services. This demand especially in the mobile messaging area (i.e. SMS – Short Messaging Service, MMS – Multimedia Messaging Service, which may well exceeded 250,000 requests per second, means that the need to evaluate competing data management systems has become not only necessary but essential. This paper presents an evaluation of SMS and MMS platforms using different database management systems – DBMS and recommends the best data management strategies for these platforms.

Prediction in Partial Duration Series With Generalized Pareto-Distributed Exceedances

DEFF Research Database (Denmark)

Rosbjerg, Dan; Madsen, Henrik; Rasmussen, Peter Funder

1992-01-01

As a generalization of the common assumption of exponential distribution of the exceedances in Partial duration series the generalized Pareto distribution has been adopted. Estimators for the parameters are presented using estimation by both method of moments and probability-weighted moments......-weighted moments. Maintaining the generalized Pareto distribution as the parent exceedance distribution the T-year event is estimated assuming the exceedances to be exponentially distributed. For moderately long-tailed exceedance distributions and small to moderate sample sizes it is found, by comparing mean...... square errors of the T-year event estimators, that the exponential distribution is preferable to the correct generalized Pareto distribution despite the introduced model error and despite a possible rejection of the exponential hypothesis by a test of significance. For moderately short-tailed exceedance...

Optimization of a Differential Ion Mobility Spectrometry-Tandem Mass Spectrometry Method for High-Throughput Analysis of Nicotine and Related Compounds: Application to Electronic Cigarette Refill Liquids.

Science.gov (United States)

Regueiro, Jorge; Giri, Anupam; Wenzl, Thomas

2016-06-21

Fast market penetration of electronic cigarettes is leading to an exponentially growing number of electronic refill liquids with different nicotine contents and an endless list of flavors. Therefore, rapid and simple methods allowing a fast screening of these products are necessary to detect harmful substances which can negatively impact the health of consumers. In this regard, the present work explores the capabilities of differential ion mobility spectrometry coupled to tandem mass spectrometry for high-throughput analysis of nicotine and 11 related compounds in commercial refill liquids for electronic cigarettes. The influence of main factors affecting the ion mobility separation, such as modifier types and concentration, separation voltage, and temperature, was systematically investigated. Despite small molecular weight differences among the studied compounds, a good separation was achieved in the ion mobility cell under the optimized conditions, which involved the use of ethanol as a polar gas-phase chemical modifier. Indeed, differential ion mobility was able to resolve (resolution >4) nicotine from its structural isomer anabasine without the use of any chromatographic separation. The quantitative performance of the proposed method was then evaluated, showing satisfactory precision (RSD ≤ 16%) and recoveries ranging from 85 to 100% for nicotine, and from 84 to 126% for the rest of the target analytes. Several commercial electronic cigarette refill liquids were analyzed to demonstrate the applicability of the method. In some cases, significant differences were found between labeled and measured levels of nicotine. Anatabine, cotinine, myosmine, and nornicotine were also found in some of the analyzed samples.

FEATURES OF IMPLEMENTATION OF MOBILE EDUCATION: PERSPECTIVES, BENEFITS AND SHORTCOMINGS

Directory of Open Access Journals (Sweden)

Halyna V. Tkachuk

2018-04-01

Full Text Available The article presents the results of the analysis of the prospects for the introduction of mobile learning on the basis of statistical data on the use of mobile devices, mobile training programs, wireless access. It was determined the place of mobile learning in the system of blended learning as the main form of organization of educational process using electronic learning means. Based on existing models of education, it was determined the main components of mobile learning. Also there are analyzed content types that can be used to organize mobile learning. It has been determined that the main types of mobile content may be a mobile site; mobile application; adapted electronic teaching aids; a separate type of content created by a teacher; social networks; unique content (augmented reality. The author are described the advantages and disadvantages of mobile learning and the use of mobile devices in the learning process.

Spectral and energetic study of the microwave level produced by various mobile telephone models in the user head

International Nuclear Information System (INIS)

Abu Kassem, I.

2009-06-01

The aim of this work is the investigation of real microwave (MW) emission level and propagation properties produced by samples of mobile phones taking as reference the guidelines recommended by the International Commission on Non Ionizing Radiation protection (ICNIRP). Measurements were performed using specified radiation meters for detecting microwaves. These measurements consisted the detecting of frequency spectrum and then the measurements of the strength of electric and magnetic fields as well as the power density. The instantaneous signal level was important for all studied mobile phones, and this level exceed the ICNIRP limits for large part of these phones. Taking into account the mean value, the major part of studies mobile phones respect the international limits. In fact, only 22% of studied mobile phones emit signals from the back side of the phone which exceed the ICNIRP limits. The emitted signal intensity decreases rapidly with distance; it becomes about 10 % of the maximum at 20 cm from the mobile phone. (author)

Multi-interface roughness effects on electron mobility in a Ga0.5In0.5P/GaAs multisubband coupled quantum well structure

International Nuclear Information System (INIS)

Sahu, Trinath; Shore, K Alan

2009-01-01

We analyse the effect of interface roughness scattering on low temperature electron mobility μ n mediated by intersubband interactions in a multisubband coupled Ga 0.5 In 0.5 P/GaAs quantum well structure. We consider a barrier δ-doped double quantum well system in which the subband electron mobility is limited by the interface roughness scattering μ IR n and ionized impurity scattering μ imp n . We analyse the effect of the intersubband interaction and coupling of subband wavefunctions through the barrier on the intrasubband and intersubband transport scattering rates. We show that the intersubband interaction controls the roughness potential of different interfaces through the dielectric screening matrix. In the case of lowest subband occupancy, the mobility is mainly governed by the interface roughness of the central barrier. Whereas when two subbands are occupied, the interface roughness of the outer barrier predominates due to intersubband effects. The influence of the intersubband interaction also exhibits interesting results on the well width up to which the interface roughness dominates in a double quantum well structure

Mobile Phone

Institute of Scientific and Technical Information of China (English)

籍万杰

2004-01-01

Your mobile phone rings.and instead of usual electronic signals,it's playing your favorite music.A friend sends your favorite song to cheer you up.One day,a record company might forward new records and music videos to your phone.

Doppler Velocimetry of Current Driven Spin Helices in a Two-Dimensional Electron Gas

Energy Technology Data Exchange (ETDEWEB)

Yang, Luyi [Univ. of California, Berkeley, CA (United States)

2013-05-17

Spins in semiconductors provide a pathway towards the development of spin-based electronics. The appeal of spin logic devices lies in the fact that the spin current is even under time reversal symmetry, yielding non-dissipative coupling to the electric field. To exploit the energy-saving potential of spin current it is essential to be able to control it. While recent demonstrations of electrical-gate control in spin-transistor configurations show great promise, operation at room temperature remains elusive. Further progress requires a deeper understanding of the propagation of spin polarization, particularly in the high mobility semiconductors used for devices. This dissertation presents the demonstration and application of a powerful new optical technique, Doppler spin velocimetry, for probing the motion of spin polarization at the level of 1 nm on a picosecond time scale. We discuss experiments in which this technique is used to measure the motion of spin helices in high mobility n-GaAs quantum wells as a function of temperature, in-plane electric field, and photoinduced spin polarization amplitude. We find that the spin helix velocity changes sign as a function of wave vector and is zero at the wave vector that yields the largest spin lifetime. This observation is quite striking, but can be explained by the random walk model that we have developed. We discover that coherent spin precession within a propagating spin density wave is lost at temperatures near 150 K. This finding is critical to understanding why room temperature operation of devices based on electrical gate control of spin current has so far remained elusive. We report that, at all temperatures, electron spin polarization co-propagates with the high-mobility electron sea, even when this requires an unusual form of separation of spin density from photoinjected electron density. Furthermore, although the spin packet co-propagates with the two-dimensional electron gas, spin diffusion is strongly

MOBILE CAMPUS: A REFLECTIVE AND COLLECTIVE DIMENSION OF EDUCATIONAL ACTIVITIES MEDIATED BY MOBILE TECHNOLOGY

Directory of Open Access Journals (Sweden)

Ivan Yu. Travkin

2013-01-01

Full Text Available The author considers a definition and general characteristics of the mobile campus allowing to ensure a combination of informal and social types of the educational activities with formal learning in a traditional educational institution (institutes of higher education. A fundamental element of the mobile campus is intelligent algorithms providing learning analyst for personalized learning experience. Also the article examines connections between the mobile campus and a learning community, a personal learning network and electronic student profile.

A high-mobility two-dimensional electron gas at the spinel/perovskite interface of γ-Al₂O₃/SrTiO₃

DEFF Research Database (Denmark)

Chen, Yunzhong; Bovet, N.; Trier, Felix

2013-01-01

The discovery of two-dimensional electron gases at the heterointerface between two insulating perovskite-type oxides, such as LaAlO3 and SrTiO3, provides opportunities for a new generation of all-oxide electronic devices. Key challenges remain for achieving interfacial electron mobilities much...

Influence of the number of layers on ultrathin CsSnI3 perovskite: from electronic structure to carrier mobility

Science.gov (United States)

Liu, Biao; Long, Mengqiu; Cai, Meng-Qiu; Yang, Junliang

2018-03-01

Inorganic halide perovskites have attracted great attention in recent years as promising materials for optoelectronic devices, with ultrathin inorganic halide perovskites showing excellent properties and great potential applications. Herein, the intrinsic electronic and optical properties of ultrathin cesium tin tri-iodide (CsSnI3) perovskite with a varying number of layers are explored using first-principles calculations. The results reveal that ultrathin CsSnI3 is a direct band gap semiconductor, and the band gap continues to increase to 1.83 eV from 1.28 eV as the number of layers is reduced to one layer from the bulk. By decreasing the number of layers, the effective mass of ultrathin CsSnI3 increases, and the optical absorption intensity along the x and y directions shows that the linear dichroism becomes stronger and stronger. Furthermore, the carrier mobilities (µ) can be predicted, and they show obvious in-plane anisotropy. The µ of the electrons is higher than that of the holes, and the electron mobility along the y direction is higher than that along the x direction. The layer thickness does not distinctly influence the µ. The difference in the atomic orbital distribution has the nature of obvious anisotropy in ultrathin CsSnI3. This work suggests that ultrathin inorganic perovskite could be a potential candidate for future nano-optoelectronic devices.

Initial evaluation of an electronic symptom diary for adolescents with cancer.

Science.gov (United States)

Baggott, Christina; Gibson, Faith; Coll, Beatriz; Kletter, Richard; Zeltzer, Paul; Miaskowski, Christine

2012-12-11

The delivery of optimal care depends on accurate communication between patients and clinicians regarding untoward symptoms. Documentation of patients' symptoms necessitates reliance on memory, which is often imprecise. We developed an electronic diary (eDiary) for adolescents and young adults (AYAs) with cancer to record symptoms. The purpose of this paper is to describe the utility of an eDiary designed for AYAs with cancer, including dependability of the mobile application, the reasons for any missing recorded data, patients' adherence rates to daily symptom queries, and patients' perceptions of the usefulness and acceptability of symptom data collection via mobile phones. Our team developed an electronic symptom diary based on interviews conducted with AYAs with cancer and their clinicians. This diary included daily severity ratings of pain, nausea, vomiting, fatigue, and sleep. The occurrence of other selected physical sequelae was assessed daily. Additionally, patients selected descriptors of their mood. A 3-week trial of the eDiary was conducted with 10 AYA cancer patients. Mobile phones with service plans were loaned to patients who were instructed to report their symptoms daily. Patients completed a brief questionnaire and were interviewed to elicit their perceptions of the eDiary and any technical difficulties encountered. Overall adherence to daily symptom reports exceeded 90%. Young people experienced few technical difficulties and reported benefit from daily symptom reports. Symptom occurrence rates were high and considerable inter- and intra-patient variability was noted in symptom and mood reports. We demonstrated the utility of an eDiary that may contribute insight into patients' symptom patterns to promote effective symptom management.

Ions mobilities in corona discharge

International Nuclear Information System (INIS)

Bakhtaev, Sh. A.; Bochkareva, G. V.; Sydykova, G. K.

2000-01-01

Ion mobility in unipolar corona at small inter-electron distances (up to 0.01 m) when as coroning element serves micro-wire is consider. Experimental data of ion mobility in corona discharge external zone in atmospheric air are obtained and its comparative analysis with known data is worked out. (author)

Electron delocalization in α-nitrogen

International Nuclear Information System (INIS)

Storchak, V.; Brewer, J.H.; Morris, G.D.; British Columbia Univ., Vancouver, BC

1995-06-01

A new technique has been developed for measuring electron drift mobility in crystals on a microscopic scale through its effect on muonium (Mu = μ + + e - ) atom formation via transport of electrons to thermalized positive muons (μ + ). Electron transport mechanisms are shown to be fundamentally different in the α and β phases of solid nitrogen, giving of about 5 orders of magnitude difference in electron mobilities. Contrary to previously reported results of macroscopic time-of-flight measurements, excess electrons appear to be delocalized in α-N 2 . (author). 22 refs., 3 figs

Direct Growth of High Mobility and Low-Noise Lateral MoS2 -Graphene Heterostructure Electronics.

Science.gov (United States)

Behranginia, Amirhossein; Yasaei, Poya; Majee, Arnab K; Sangwan, Vinod K; Long, Fei; Foss, Cameron J; Foroozan, Tara; Fuladi, Shadi; Hantehzadeh, Mohammad Reza; Shahbazian-Yassar, Reza; Hersam, Mark C; Aksamija, Zlatan; Salehi-Khojin, Amin

2017-08-01

Reliable fabrication of lateral interfaces between conducting and semiconducting 2D materials is considered a major technological advancement for the next generation of highly packed all-2D electronic circuitry. This study employs seed-free consecutive chemical vapor deposition processes to synthesize high-quality lateral MoS 2 -graphene heterostructures and comprehensively investigated their electronic properties through a combination of various experimental techniques and theoretical modeling. These results show that the MoS 2 -graphene devices exhibit an order of magnitude higher mobility and lower noise metrics compared to conventional MoS 2 -metal devices as a result of energy band rearrangement and smaller Schottky barrier height at the contacts. These findings suggest that MoS 2 -graphene in-plane heterostructures are promising materials for the scale-up of all-2D circuitry with superlative electrical performance. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Disorder effect on carrier mobility in Fullerene organic semiconductor

International Nuclear Information System (INIS)

Mendil, N; Daoudi, M; Berkai, Z; Belghachi, A

2015-01-01

The critical factor that limits the efficiencies of organic electronic devices is the low charge carrier mobility which is attributed to disorder in organic films. In this context, we have studied the effects of disorder on carrier mobility in organic Schottky diode of electrons for the fullerene (C 60 ). Our results show that the mobility is sensitive probes of structural phase transitions and order-disorder underlying C 60 . Where it is one reason behind the low mobility which it take as value 1.4x10 -2 cm 2 /V.s above critical temperature Tc =289K. (paper)

AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

Directory of Open Access Journals (Sweden)

Xinke Liu

2017-09-01

Full Text Available This paper reported AlGaN/GaN high electron mobility transistors (HEMTs with low sub-threshold swing SS on free-standing GaN wafer. High quality AlGaN/GaN epi-layer has been grown by metal-organic chemical vapor deposition (MOCVD on free-standing GaN, small full-width hall maximum (FWHM of 42.9 arcsec for (0002 GaN XRD peaks and ultralow dislocation density (∼104-105 cm-2 were obtained. Due to these extremely high quality material properties, the fabricated AlGaN/GaN HEMTs achieve a low SS (∼60 mV/decade, low hysteresis of 54 mV, and high peak electron mobility μeff of ∼1456 cm2V-1s-1. Systematic study of materials properties and device characteristics exhibits that GaN-on-GaN AlGaN/GaN HEMTs are promising candidate for next generation high power device applications.

Theoretical prediction of high carrier mobility in single-walled black phosphorus nanotubes

Science.gov (United States)

Li, Q. F.; Wang, H. F.; Yang, C. H.; Li, Q. Q.; Rao, W. F.

2018-05-01

One-dimensional semiconductors are promising materials for high-performance nanoscale devices. Using the first-principles calculations combined with deformation potential approximation, we study the electronic structures and carrier transport properties of black phosphorus nanotubes (BPNTs). It is found that both armchair and zigzag BPNTs with diameter 13.5-18.5 Å are direct bandgap semiconductors. At a similar diameter, the carrier mobility of zigzag BPNT is one order of magnitude larger than that of armchair BPNT. For armchair BPNTs, the electron mobility is about 90.70-155.33 cm2 V-1 s-1 at room temperature, which is about three times of its hole counterpart. For zigzag BPNTs, the maximum mobility can reach 2.87 ×103 cm2 V-1 s-1. Furthermore, the electronic properties can be effectively tuned by the strain. For zigzag (0,13) nanotube, there is a direct-to-indirect band gap transition at a tensile strain of about 6%. Moreover, the electron mobility is boosted sharply by one order of magnitude by applying the compressive or tensile strain. The electron mobility increases to 14.05 ×103 cm2 V-1 s-1 at a tensile strain of 9%. Our calculations highlight the tunable electronic properties and superior carrier mobility of BPNTs that are promising for interesting applications in future nano-electronic devices.

Hall mobilities in GaN{sub x}As{sub 1-x}

Energy Technology Data Exchange (ETDEWEB)

Olea, Javier; Gonzalez-Diaz, German [Dpto. de Fisica Aplicada III, Facultad de Ciencias Fisicas, Universidad Complutense de Madrid, Madrid 28040 (Spain); Yu, Kin Man; Walukiewicz, Wladek [Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720-8197 (United States)

2010-07-15

In this work we report a systematic study of the electron and hole mobilities of GaN{sub x}As{sub 1-x} alloys with different dopants (Zn, Te) and carrier concentrations (10{sup 17}-10{sup 19} cm{sup -3}). We found a very slight reduction of the hole mobility in p-GaN{sub x}As{sub 1-x} compared to p-GaAs, indicating that for small N contents ({proportional_to}1.6%) the valence band is not affected by the N incorporation. In a striking contrast, incorporation of even small amounts of N leads to an abrupt reduction of the electron mobility in n-GaN{sub x}As{sub 1-x}. We further show that the processes that limit the mobility in GaN{sub x}As{sub 1-x} can be explained by the band broadening and the random field scatterings. Considering these two scattering mechanisms we calculated the dependence of electron mobilities on electron concentration as well as on N composition in GaN{sub x}As{sub 1-x}. The calculations agree reasonably well with experiment data of maximum electron mobilities with alloy composition. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Secure Architectures for Mobile Applications

OpenAIRE

Cristian TOMA

2007-01-01

The paper presents security issues and architectures for mobile applications and GSM infrastructure. The article also introduces the idea of a new secure architecture for an inter-sector electronic wallet used in payments - STP4EW (Secure Transmission Protocol for Electronic Wallet)

Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

Energy Technology Data Exchange (ETDEWEB)

Bairamis, A.; Zervos, Ch.; Georgakilas, A., E-mail: alexandr@physics.uoc.gr [Microelectronics Research Group, IESL, Foundation for Research and Technology-Hellas (FORTH), P.O. Box 1385, GR-71110 Heraklion, Crete (Greece); Department of Physics, University of Crete, P.O. Box 2208, GR-71003 Heraklion, Crete (Greece); Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G. [Microelectronics Research Group, IESL, Foundation for Research and Technology-Hellas (FORTH), P.O. Box 1385, GR-71110 Heraklion, Crete (Greece)

2014-09-15

AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300 nm GaN/ 200 nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8 × 10{sup 12} to 2.1 × 10{sup 13} cm{sup −2} as the AlN barrier thickness increased from 2.2 to 4.5 nm, while a 4.5 nm AlN barrier would result to 3.1 × 10{sup 13} cm{sup −2} on a GaN buffer layer. The 3.0 nm AlN barrier structure exhibited the highest 2DEG mobility of 900 cm{sup 2}/Vs for a density of 1.3 × 10{sup 13} cm{sup −2}. The results were also confirmed by the performance of 1 μm gate-length transistors. The scaling of AlN barrier thickness from 1.5 nm to 4.5 nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63 A/mm. The maximum drain-source current was 1.1 A/mm for AlN barrier thickness of 3.0 nm and 3.7 nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0 nm AlN barrier.

Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

International Nuclear Information System (INIS)

Bairamis, A.; Zervos, Ch.; Georgakilas, A.; Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G.

2014-01-01

AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300 nm GaN/ 200 nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8 × 10 12 to 2.1 × 10 13 cm −2 as the AlN barrier thickness increased from 2.2 to 4.5 nm, while a 4.5 nm AlN barrier would result to 3.1 × 10 13 cm −2 on a GaN buffer layer. The 3.0 nm AlN barrier structure exhibited the highest 2DEG mobility of 900 cm 2 /Vs for a density of 1.3 × 10 13 cm −2 . The results were also confirmed by the performance of 1 μm gate-length transistors. The scaling of AlN barrier thickness from 1.5 nm to 4.5 nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63 A/mm. The maximum drain-source current was 1.1 A/mm for AlN barrier thickness of 3.0 nm and 3.7 nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0 nm AlN barrier.

Study of surface leakage current of AlGaN/GaN high electron mobility transistors

International Nuclear Information System (INIS)

Chen, YongHe; Zhang, Kai; Cao, MengYi; Zhao, ShengLei; Zhang, JinCheng; Hao, Yue; Ma, XiaoHua

2014-01-01

Temperature-dependent surface current measurements were performed to analyze the mechanism of surface conductance of AlGaN/GaN channel high-electron-mobility transistors by utilizing process-optimized double gate structures. Different temperatures and electric field dependence have been found in surface current measurements. At low electric field, the mechanism of surface conductance is considered to be two-dimensional variable range hopping. At elevated electric field, the Frenkel–Poole trap assisted emission governs the main surface electrons transportation. The extracted energy barrier height of electrons emitting from trapped state near Fermi energy level into a threading dislocations-related continuum state is 0.38 eV. SiN passivation reduces the surface leakage current by two order of magnitude and nearly 4 orders of magnitude at low and high electric fields, respectively. SiN also suppresses the Frenkel–Poole conductance at high temperature by improving the surface states of AlGaN/GaN. A surface treatment process has been introduced to further suppress the surface leakage current at high temperature and high field, which results in a decrease in surface current of almost 3 orders of magnitude at 476 K

Present status of recycling waste mobile phones in China: a review.

Science.gov (United States)

Li, Jingying; Ge, Zhongying; Liang, Changjin; An, Ni

2017-07-01

A large number of waste mobile phones have already been generated and are being generated. Various countries around the world have all been positively exploring the way of recycling and reuse when facing such a large amount of waste mobile phones. In some countries, processing waste mobile phones has been forming a complete industrial chain, which can not only recycle waste mobile phones to reduce their negative influence on the environment but also turn waste into treasure to acquire economic benefits dramatically. However, the situation of recycling waste mobile phones in China is not going well. Waste mobile phones are not formally covered by existing regulations and policies for the waste electric and electronic equipment in China. In order to explore an appropriate system to recover waste mobile phones, the mobile phone production and the amount of waste mobile phones are introduced in this paper, and status of waste mobile phones recycling is described; then, the disposal technology of electronic waste that would be most likely to be used for processing of electronic waste in industrial applications in the near future is reviewed. Finally, rationalization proposals are put forward based on the current recovery status of waste mobile phones for the purpose of promoting the development of recycling waste mobile phones in developing countries with a special emphasis on China.

Comment on ''Reassessment of space-change and central-cell scattering contributions to GaAs electron mobility''

Science.gov (United States)

Stringfellow, G. B.

1982-07-01

Walukiewicz et al.1 have recently stated that previously reported contributions to the electron mobility of GaAs from space-charge and/or central-cell scattering are in fact insignificant, and that reports of a T-1/2 term in the mobility2,3 are artifacts due to the assumption of Mathiessen's rule. This conclusion is an overstatement of their results and in fact demonstrably incorrect. First, an analysis of the data reported by Stringfellow2 and Stringfellow and Kuenzel3 as well as others has already been performed by Chattopadhyay et al.4 without assuming Mathiessen's rule. Their conclusion is that central-cell scattering is indeed significant. Second, the particular data analyzed by Walukiewicz et al. are in fact acknowledged in Ref. 2 to have very little T-1/2 scattering. The magnitude of the scattering cross section for T-1/2 scattering, SCA, for other samples is more than an order of magnitude larger, too large to be ascribed to errors inherent in using Mathiessen's rule. Experimental data convincingly demonstrate this. The mobility versus temperature curves are lower, especially at higher temperatures, for C as opposed to Zn- or Ge-doped samples where all have the same values of ND+NA (see Fig. 2 of Ref. 3). In addition, recently published data5 for MBE GaAs grown with different C doping levels show that for constant ND+NA, SCA is three times larger for the more highly C doped samples. This could not be due to errors inherent in the use of Mathiessen's rule. For these samples C clearly introduces an increase in the T-1/2 scattering which is not observed for other acceptors. ufc15xr 1W. Walukiewicz, J. Lagowski, and H. C. Gatos, J. Appl. Phys. 52, 5853 (1981). 2G. B. Stringfellow, J. Appl. Phys. 50, 4178 (1979). 3G. B. Stringfellow and H. Kuenzel, J. Appl. Phys. 51, 3254 (1980). 4D. Chattopadhyay, H. J. Queisser, and G. B. Stringfellow, J. Phys. Soc. Jpn. 49, Suppl. A, 293 (1980). 5G. B. Stringfellow, R. Stall, and W. Koschel, Appl. Phys. Lett. 38, 156 (1981

Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics

KAUST Repository

Salas-Villasenor, A. L.; Mejia, I.; Hovarth, J.; Alshareef, Husam N.; Cha, D. K.; Ramirez-Bon, R.; Gnade, B. E.; Quevedo-Lopez, M. A.

2010-01-01

Cadmium sulfide thin film transistors were demonstrated as the n-type device for use in flexible electronics. CdS thin films were deposited by chemical bath deposition (70° C) on either 100 nm HfO2 or SiO2 as the gate dielectrics. Common gate transistors with channel lengths of 40-100 μm were fabricated with source and drain aluminum top contacts defined using a shadow mask process. No thermal annealing was performed throughout the device process. X-ray diffraction results clearly show the hexagonal crystalline phase of CdS. The electrical performance of HfO 2 /CdS -based thin film transistors shows a field effect mobility and threshold voltage of 25 cm2 V-1 s-1 and 2 V, respectively. Improvement in carrier mobility is associated with better nucleation and growth of CdS films deposited on HfO2. © 2010 The Electrochemical Society.

Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics

KAUST Repository

Salas-Villasenor, A. L.

2010-06-29

Cadmium sulfide thin film transistors were demonstrated as the n-type device for use in flexible electronics. CdS thin films were deposited by chemical bath deposition (70° C) on either 100 nm HfO2 or SiO2 as the gate dielectrics. Common gate transistors with channel lengths of 40-100 μm were fabricated with source and drain aluminum top contacts defined using a shadow mask process. No thermal annealing was performed throughout the device process. X-ray diffraction results clearly show the hexagonal crystalline phase of CdS. The electrical performance of HfO 2 /CdS -based thin film transistors shows a field effect mobility and threshold voltage of 25 cm2 V-1 s-1 and 2 V, respectively. Improvement in carrier mobility is associated with better nucleation and growth of CdS films deposited on HfO2. © 2010 The Electrochemical Society.

Method to quantify the delocalization of electronic states in amorphous semiconductors and its application to assessing charge carrier mobility of p -type amorphous oxide semiconductors

Science.gov (United States)

de Jamblinne de Meux, A.; Pourtois, G.; Genoe, J.; Heremans, P.

2018-01-01

Amorphous semiconductors are usually characterized by a low charge carrier mobility, essentially related to their lack of long-range order. The development of such material with higher charge carrier mobility is hence challenging. Part of the issue comes from the difficulty encountered by first-principles simulations to evaluate concepts such as the electron effective mass for disordered systems since the absence of periodicity induced by the disorder precludes the use of common concepts derived from condensed matter physics. In this paper, we propose a methodology based on first-principles simulations that partially solves this problem, by quantifying the degree of delocalization of a wave function and of the connectivity between the atomic sites within this electronic state. We validate the robustness of the proposed formalism on crystalline and molecular systems and extend the insights gained to disordered/amorphous InGaZnO4 and Si. We also explore the properties of p -type oxide semiconductor candidates recently reported to have a low effective mass in their crystalline phases [G. Hautier et al., Nat. Commun. 4, 2292 (2013), 10.1038/ncomms3292]. Although in their amorphous phase none of the candidates present a valence band with delocalization properties matching those found in the conduction band of amorphous InGaZnO4, three of the seven analyzed materials show some potential. The most promising candidate, K2Sn2O3 , is expected to possess in its amorphous phase a slightly higher hole mobility than the electron mobility in amorphous silicon.

Learners- Perceptions of Mobile Devices for Learning in Higher Education - Towards a Mobile Learning Pedagogical Framework

OpenAIRE

Conradie; P.W.; Lombard; A.; Moller; M.

2013-01-01

The dramatic effect of information technology on society is undeniable. In education, it is evident in the use of terms like active learning, blended learning, electronic learning and mobile learning (ubiquitous learning). This study explores the perceptions of 54 learners in a higher education institution regarding the use of mobile devices in a third year module. Using semi-structured interviews, it was found that mobile devices had a positive impact on learner motivati...

Interface-Dependent Effective Mobility in Graphene Field-Effect Transistors

Science.gov (United States)

Ahlberg, Patrik; Hinnemo, Malkolm; Zhang, Shi-Li; Olsson, Jörgen

2018-03-01

By pretreating the substrate of a graphene field-effect transistor (G-FET), a stable unipolar transfer characteristic, instead of the typical V-shape ambipolar behavior, has been demonstrated. This behavior is achieved through functionalization of the SiO2/Si substrate that changes the SiO2 surface from hydrophilic to hydrophobic, in combination with postdeposition of an Al2O3 film by atomic layer deposition (ALD). Consequently, the back-gated G-FET is found to have increased apparent hole mobility and suppressed apparent electron mobility. Furthermore, with addition of a top-gate electrode, the G-FET is in a double-gate configuration with independent top- or back-gate control. The observed difference in mobility is shown to also be dependent on the top-gate bias, with more pronounced effect at higher electric field. Thus, the combination of top and bottom gates allows control of the G-FET's electron and hole mobilities, i.e., of the transfer behavior. Based on these observations, it is proposed that polar ligands are introduced during the ALD step and, depending on their polarization, result in an apparent increase of the effective hole mobility and an apparent suppressed effective electron mobility.

Basic Equations for the Modeling of Gallium Nitride (gan) High Electron Mobility Transistors (hemts)

Science.gov (United States)

Freeman, Jon C.

2003-01-01

Gallium nitride (GaN) is a most promising wide band-gap semiconductor for use in high-power microwave devices. It has functioned at 320 C, and higher values are well within theoretical limits. By combining four devices, 20 W has been developed at X-band. GaN High Electron Mobility Transistors (HEMTs) are unique in that the two-dimensional electron gas (2DEG) is supported not by intentional doping, but instead by polarization charge developed at the interface between the bulk GaN region and the AlGaN epitaxial layer. The polarization charge is composed of two parts: spontaneous and piezoelectric. This behavior is unlike other semiconductors, and for that reason, no commercially available modeling software exists. The theme of this document is to develop a self-consistent approach to developing the pertinent equations to be solved. A Space Act Agreement, "Effects in AlGaN/GaN HEMT Semiconductors" with Silvaco Data Systems to implement this approach into their existing software for III-V semiconductors, is in place (summer of 2002).

Secure Architectures for Mobile Applications

Directory of Open Access Journals (Sweden)

2007-01-01

Full Text Available The paper presents security issues and architectures for mobile applications and GSM infrastructure. The article also introduces the idea of a new secure architecture for an inter-sector electronic wallet used in payments - STP4EW (Secure Transmission Protocol for Electronic Wallet

Intrinsic broadening of the mobility spectrum of bulk n-type GaAs

International Nuclear Information System (INIS)

Jolley, G; Umana-Membreno, G A; Akhavan, N D; Antoszewski, J; Faraone, L; Fischetti, M V

2014-01-01

Modern devices consisting of multiple semiconductor layers often result in the population of numerous distinct carrier species. Conventional Hall measurements at a single-magnetic-field strength provide only a weighted average of the electron mobility and carrier concentration of a semiconductor structure and, therefore, are of limited use for the extraction of carrier transport information. In recent years, mobility spectrum analysis techniques, which have been developed to extract a mobility spectrum from magnetic field-dependent conductivity-tensor measurements, have been applied in the analysis of carrier conductivity mechanisms of numerous semiconductor structures and devices. Currently there is a severe lack of reported studies on theoretical calculations of the mobility distribution of semiconductor structures or devices. In addition, the majority of reports on experimental mobility spectrum analysis are of complex, multi layered structures such as type-II superlattices, and the interpretation of the mobility spectra has been difficult. Therefore, a good understanding of the mobility spectrum has yet to be developed. For example, it is often assumed that distinct peaks of a mobility spectrum result from fundamentally different conduction mechanisms such as the bulk and surface conduction of narrow-band-gap semiconductors. In this article, we present calculations of the electron mobility distribution of bulk GaAs, which predict the existence of multiple mobility spectrum peaks that result from electron conductivity in the Γ conduction band. This report serves as an important and simple test case upon which experimentally measured mobility spectra can be compared. It also presents insight into the general nature of electron mobility distributions. (paper)

Graphene mobility mapping

DEFF Research Database (Denmark)

Buron, Jonas Christian Due; Pizzocchero, Filippo; Jepsen, Peter Uhd

2015-01-01

Carrier mobility and chemical doping level are essential figures of merit for graphene, and large-scale characterization of these properties and their uniformity is a prerequisite for commercialization of graphene for electronics and electrodes. However, existing mapping techniques cannot directly...... assess these vital parameters in a non-destructive way. By deconvoluting carrier mobility and density from non-contact terahertz spectroscopic measurements of conductance in graphene samples with terahertz-transparent backgates, we are able to present maps of the spatial variation of both quantities over...... graphene indicates dominance by charged scatterers. Unexpectedly, significant variations in mobility rather than doping are the cause of large conductance inhomogeneities, highlighting the importance of statistical approaches when assessing large-area graphene transport properties....

Small gold clusters on graphene, their mobility and clustering: a DFT study

International Nuclear Information System (INIS)

Amft, Martin; Sanyal, Biplab; Eriksson, Olle; Skorodumova, Natalia V

2011-01-01

Motivated by the experimentally observed high mobility of gold atoms on graphene and their tendency to form nanometer-sized clusters, we present a density functional theory study of the ground state structures of small gold clusters on graphene, their mobility and clustering. Our detailed analysis of the electronic structures identifies the opportunity to form strong gold-gold bonds and the graphene-mediated interaction of the pre-adsorbed fragments as the driving forces behind gold's tendency to aggregate on graphene. While clusters containing up to three gold atoms have one unambiguous ground state structure, both gas phase isomers of a cluster with four gold atoms can be found on graphene. In the gas phase the diamond-shaped Au 4 D cluster is the ground state structure, whereas the Y-shaped Au 4 Y becomes the actual ground state when adsorbed on graphene. As we show, both clusters can be produced on graphene by two distinct clustering processes. We also studied in detail the stepwise formation of a gold dimer out of two pre-adsorbed adatoms, as well as the formation of Au 3 . All reactions are exothermic and no further activation barriers, apart from the diffusion barriers, were found. The diffusion barriers of all studied clusters range from 4 to 36 meV only, and are substantially exceeded by the adsorption energies of - 0.1 to - 0.59 eV. This explains the high mobility of Au 1-4 on graphene along the C-C bonds.

Field effect measurements on charge carrier mobilities in various polymer-fullerene blend compositions

International Nuclear Information System (INIS)

Hauff, Elizabeth von; Parisi, Juergen; Dyakonov, Vladimir

2006-01-01

In this study we investigated materials typically used in polymer photovoltaics. Field effect measurements were performed in order to determine the hole mobilities in the conjugated polymer poly(3-hexylthiophene) (P3HT) and the electron mobilities in the methanofullerene[6,6]-phenyl C 61 -butyric acid methyl ester (PCBM), and, particularly, in the polymer-fullerene composite blends. Regarding the pure films, electron mobilities in PCBM were found to be in the 10 -2 cm 2 /Vs range, and hole mobilities in P3HT were found to be in the 10 -3 cm2/Vs range. In the PCBM:P3HT blends, it was found that varying the PCBM content in PCBM:P3HT blends led to a steep increase in electron mobility with increasing PCBM content, while the hole mobility was found to slightly decrease with the increasing PCBM concentration. In 2:1 PCBM:P3HT tempered blends, the charge carrier mobilities were found to be roughly balanced, at 10 -3 cm 2 /Vs. For improved electron transport in the blends, tempering was found to be crucial

Transformational III-V Electronics

KAUST Repository

Nour, Maha A.

2014-01-01

Flexible electronics using III-V materials for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. This thesis describes a complementary metal oxide semiconductor (CMOS

Structural properties of silver nanoparticle agglomerates based on transmission electron microscopy: relationship to particle mobility analysis

International Nuclear Information System (INIS)

Shin, Weon Gyu; Wang Jing; Mertler, Michael; Sachweh, Bernd; Fissan, Heinz; Pui, David Y. H.

2009-01-01

In this work, the structural properties of silver nanoparticle agglomerates generated using condensation and evaporation method in an electric tube furnace followed by a coagulation process are analyzed using Transmission Electron Microscopy (TEM). Agglomerates with mobility diameters of 80, 120, and 150 nm are sampled using the electrostatic method and then imaged by TEM. The primary particle diameter of silver agglomerates was 13.8 nm with a standard deviation of 2.5 nm. We obtained the relationship between the projected area equivalent diameter (d pa ) and the mobility diameter (d m ), i.e., d pa = 0.92 ± 0.03 d m for particles from 80 to 150 nm. We obtained fractal dimensions of silver agglomerates using three different methods: (1) D f = 1.84 ± 0.03, 1.75 ± 0.06, and 1.74 ± 0.03 for d m = 80, 120, and 150 nm, respectively from projected TEM images using a box counting algorithm; (2) fractal dimension (D fL ) = 1.47 based on maximum projected length from projected TEM images using an empirical equation proposed by Koylu et al. (1995) Combust Flame 100:621-633; and (3) mass fractal-like dimension (D fm ) = 1.71 theoretically derived from the mobility analysis proposed by Lall and Friedlander (2006) J Aerosol Sci 37:260-271. We also compared the number of primary particles in agglomerate and found that the number of primary particles obtained from the projected surface area using an empirical equation proposed by Koylu et al. (1995) Combust Flame 100:621-633 is larger than that from using the relationship, d pa = 0.92 ± 0.03 d m or from using the mobility analysis.

Research and Evaluation of the Energy Flux Density of the Mobile Phone Electromagnetic Field

Directory of Open Access Journals (Sweden)

Pranas Baltrėnas

2012-12-01

Full Text Available The article analyses variations in the energy flux density of the electromagnetic field of 10 mobile phones depending on distance. The studies have been conducted using three modes: sending a text message, receiving a text message and connecting a mobile phone to the Internet. When text messages are received or sent from a mobile phone, the values of the energy flux density of the mobile phone electromagnetic field exceed the safe allowable limit and make 10 μW / cm². A distance of 10, 20 and 30 cm from a mobile phone is effective protection against the energy flux density of the electromagnetic field when writing texts, receiving messages or connecting to the mobile Internet.Article in Lithuanian

Transforming Mobile Platform with KI-SIM Card into an Open Mobile Identity Tool

Science.gov (United States)

Hyppönen, Konstantin; Hassinen, Marko; Trichina, Elena

Recent introduction of Near Field Communication (NFC) in mobile phones has stimulated the development of new proximity payment and identification services. We present an architecture that facilitates the use of the mobile phone as a personalised electronic identity tool. The tool can work as a replacement for numerous ID cards and licenses. Design for privacy principles have been applied, such as minimisation of data collection and informed consent of the user. We describe an implementation of a lightweight version of the of the mobile identity tool using currently available handset technology and off-the-shelf development tools.

Low-resistance gateless high electron mobility transistors using three-dimensional inverted pyramidal AlGaN/GaN surfaces

International Nuclear Information System (INIS)

So, Hongyun; Senesky, Debbie G.

2016-01-01

In this letter, three-dimensional gateless AlGaN/GaN high electron mobility transistors (HEMTs) were demonstrated with 54% reduction in electrical resistance and 73% increase in surface area compared with conventional gateless HEMTs on planar substrates. Inverted pyramidal AlGaN/GaN surfaces were microfabricated using potassium hydroxide etched silicon with exposed (111) surfaces and metal-organic chemical vapor deposition of coherent AlGaN/GaN thin films. In addition, electrical characterization of the devices showed that a combination of series and parallel connections of the highly conductive two-dimensional electron gas along the pyramidal geometry resulted in a significant reduction in electrical resistance at both room and high temperatures (up to 300 °C). This three-dimensional HEMT architecture can be leveraged to realize low-power and reliable power electronics, as well as harsh environment sensors with increased surface area

Low-resistance gateless high electron mobility transistors using three-dimensional inverted pyramidal AlGaN/GaN surfaces

Energy Technology Data Exchange (ETDEWEB)

So, Hongyun, E-mail: hyso@stanford.edu [Department of Aeronautics and Astronautics, Stanford University, Stanford, California 94305 (United States); Senesky, Debbie G. [Department of Aeronautics and Astronautics, Stanford University, Stanford, California 94305 (United States); Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)

2016-01-04

In this letter, three-dimensional gateless AlGaN/GaN high electron mobility transistors (HEMTs) were demonstrated with 54% reduction in electrical resistance and 73% increase in surface area compared with conventional gateless HEMTs on planar substrates. Inverted pyramidal AlGaN/GaN surfaces were microfabricated using potassium hydroxide etched silicon with exposed (111) surfaces and metal-organic chemical vapor deposition of coherent AlGaN/GaN thin films. In addition, electrical characterization of the devices showed that a combination of series and parallel connections of the highly conductive two-dimensional electron gas along the pyramidal geometry resulted in a significant reduction in electrical resistance at both room and high temperatures (up to 300 °C). This three-dimensional HEMT architecture can be leveraged to realize low-power and reliable power electronics, as well as harsh environment sensors with increased surface area.

O3 Layers via Spray Pyrolysis at Low Temperatures and Their Application in High Electron Mobility Transistors

KAUST Repository

Isakov, Ivan

2017-04-06

The growth mechanism of indium oxide (InO) layers processed via spray pyrolysis of an aqueous precursor solution in the temperature range of 100-300 °C and the impact on their electron transporting properties are studied. Analysis of the droplet impingement sites on the substrate\\'s surface as a function of its temperature reveals that Leidenfrost effect dominated boiling plays a crucial role in the growth of smooth, continuous, and highly crystalline InO layers via a vapor phase-like process. By careful optimization of the precursor formulation, deposition conditions, and choice of substrate, this effect is exploited and ultrathin and exceptionally smooth layers of InO are grown over large area substrates at temperatures as low as 252 °C. Thin-film transistors (TFTs) fabricated using these optimized InO layers exhibit superior electron transport characteristics with the electron mobility reaching up to 40 cm V s, a value amongst the highest reported to date for solution-processed InO TFTs. The present work contributes enormously to the basic understanding of spray pyrolysis and highlights its tremendous potential for large-volume manufacturing of high-performance metal oxide thin-film transistor electronics.

O3 Layers via Spray Pyrolysis at Low Temperatures and Their Application in High Electron Mobility Transistors

KAUST Repository

Isakov, Ivan; Faber, Hendrik; Grell, Max; Wyatt-Moon, Gwenhivir; Pliatsikas, Nikos; Kehagias, Thomas; Dimitrakopulos, George P.; Patsalas, Panos P.; Li, Ruipeng; Anthopoulos, Thomas D.

2017-01-01

The growth mechanism of indium oxide (InO) layers processed via spray pyrolysis of an aqueous precursor solution in the temperature range of 100-300 °C and the impact on their electron transporting properties are studied. Analysis of the droplet impingement sites on the substrate's surface as a function of its temperature reveals that Leidenfrost effect dominated boiling plays a crucial role in the growth of smooth, continuous, and highly crystalline InO layers via a vapor phase-like process. By careful optimization of the precursor formulation, deposition conditions, and choice of substrate, this effect is exploited and ultrathin and exceptionally smooth layers of InO are grown over large area substrates at temperatures as low as 252 °C. Thin-film transistors (TFTs) fabricated using these optimized InO layers exhibit superior electron transport characteristics with the electron mobility reaching up to 40 cm V s, a value amongst the highest reported to date for solution-processed InO TFTs. The present work contributes enormously to the basic understanding of spray pyrolysis and highlights its tremendous potential for large-volume manufacturing of high-performance metal oxide thin-film transistor electronics.

The drift-diffusion interpretation of the electron current within the organic semiconductor characterized by the bulk single energy trap level

Science.gov (United States)

Cvikl, B.

2010-01-01

exceed the corresponding published measurements. For this reason the effect of the drift term alone is additionally investigated. On the basis of the published empirical electron mobilities and the diffusion term revoked, it is shown that the steady state electron current density within the Al/Alq3 (97 nm)/Ca single layer organic structure may well be pictured within the drift-only interpretation of the charge carriers within the Alq3 organic characterized by the single (shallow) trap energy level. In order to arrive at this result, it is necessary that the nonzero electric field, calculated to exist at the electron injecting Alq3/Ca boundary, is to be appropriately accounted for in the computation.

New Trends and Solutions in Mobile Business

Directory of Open Access Journals (Sweden)

2007-01-01

Full Text Available Nowadays the business medium requires anytime and anywhere connectivity. In an increasingly competitive business environment, more and more organizations need fast responses and instant results. Therefore, mobility changes the way companies do business; instant messaging, voice services, real-time LAN access, network access while traveling are transforming the business environment. In this context, WLANs are critical from the business point of view. The effectiveness with which employees make decisions drives to the success or failure of the business; thus, the business must enable employees to access the information needed to exceed corporate expectations. This article presents the key characteristics of the mobile business and analyzes a possible solution offered by a giant of the networking industry

Measurement of the drift mobilities and the mobility-lifetime products of charge carriers in a CdZnTe crystal by using a transient pulse technique

International Nuclear Information System (INIS)

Cho, H Y; Kwon, Y K; Lee, C S; Lee, J H; Moon, J Y

2011-01-01

In this work we present results on the measurement of the drift mobility and the mobility-lifetime product of charge carriers in a 16-pixellated CdZnTe detector. For the determination of an interaction position based on the pulse rise-time method in a CZT detector, it is necessary to characterize the transport properties governed by drift mobility and lifetime for electrons and holes. In order to extract the transport properties of an electron and a hole, we bombarded 5.5-MeV alpha particles from a 241 Am source and 81-keV gamma rays emitted from a 133 Ba source on the negatively biased contact of the CZT detector. A time-of-flight (TOF) method was used to measure the electron drift mobility at room temperature whose value turned out to be 906.4 cm 2 /Vc s. With the Hecht's equation, the electron mobility-lifetime product was also determined from the bias-dependent alpha response and was equal to (9.88 ± 2.33) x 10 -3 cm 2 /V. On the other hand, the hole mobility-lifetime product was evaluated by a model based on the average charge collection efficiency which accounts for the absorption probability with a given photon energy. By using a single parameter fitting of the model, we obtained the hole mobility-lifetime product of (8.28 ± 0.17) x 10 -4 cm 2 /V.

Novel extension of the trap model for electrons in liquid hydrocarbons

International Nuclear Information System (INIS)

Jamal, M.A.; Watt, D.E.

1981-01-01

A novel extension for the trap model of electron mobilities in liquid hydrocarbons is described. The new model assumes: (a) two main types of electron trap exist in liquid hydrocarbons, one is deep and the second is shallow; (b) these traps are the same in all liquid alkanes. The difference in electron mobilities in different alkanes is accounted for by the difference in the frequency of electron trapping in each state. The probability of trapping in each state has been evaluated from the known structures of the normal alkanes. Electron mobilities in normal alkanes (C 3 -C 10 ) show a very good correlation with the probability of trapping in deep traps, suggesting that the C-C bonds are the main energy sinks of the electron. A mathematical formula which expresses the electron mobility in terms of the probability of trapping in deep traps has been found from the Arrhenius relationship between electron mobilities and probability of trapping. The model has been extended for branched alkanes and the relatively high electron mobilities in globular alkanes has been explained by the fact that each branch provides some degree of screening to the skeleton structure of the molecule resulting in reduction of the probability of electron interaction with the molecular skeleton. (author)

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors.

Science.gov (United States)

Hardy, Matthew T; Storm, David F; Katzer, D Scott; Downey, Brian P; Nepal, Neeraj; Meyer, David J

2016-11-24

Plasma-assisted molecular beam epitaxy is well suited for the epitaxial growth of III-nitride thin films and heterostructures with smooth, abrupt interfaces required for high-quality high-electron-mobility transistors (HEMTs). A procedure is presented for the growth of N-polar InAlN HEMTs, including wafer preparation and growth of buffer layers, the InAlN barrier layer, AlN and GaN interlayers and the GaN channel. Critical issues at each step of the process are identified, such as avoiding Ga accumulation in the GaN buffer, the role of temperature on InAlN compositional homogeneity, and the use of Ga flux during the AlN interlayer and the interrupt prior to GaN channel growth. Compositionally homogeneous N-polar InAlN thin films are demonstrated with surface root-mean-squared roughness as low as 0.19 nm and InAlN-based HEMT structures are reported having mobility as high as 1,750 cm 2 /V∙sec for devices with a sheet charge density of 1.7 x 10 13 cm -2 .

Investigation of the possibility of exceeding the Greenwald density limit during ECRH in T-10

International Nuclear Information System (INIS)

Alikaev, V.V.; Borshchegovskii, A.A.; Volkov, V.V.; Dremin, M.M.; Esipchuk, Yu.V.; Kakurin, A.M.; Kirneva, N.A.; Kislov, A.Ya.; Kislov, D.A.; Klimanov, I.V.; Kochin, V.A.; Krupin, V.A.; Krylov, S.V.; Myalton, T.B.; Novikov, A.Yu.; Notkin, G.E.; Pavlov, Yu.D.; Piterskii, V.V.; Poznyak, V.I.; Roi, I.N.

2000-01-01

In T-10 experiments, attempts were made to significantly exceed the Greenwald limit n-bar Gr during high-power (P ab = 750 kW) electron-cyclotron resonance heating (ECRH) and gas puffing. Formally, the density limit (n-bar e ) lim exceeding the Greenwald limit ((n-bar) e ) lim /n-bar Gr = 1.8) was achieved for q L = 8.2. However, as q L decreased, the ratio (n-bar e ) lim /n-bar Gr also decreased, approaching unity at q L ≅ 3. It was suggested that the 'current radius' (i.e., the radius of the magnetic surface enclosing the bulk of the plasma current I p ), rather than the limiter radius, was the parameter governing the value of (n-bar e ) lim . In the ECRH experiments, no substantial degradation of plasma confinement was observed up to n-bar e ∼ 0.9(n-bar e ) lim regardless of the ratio (n(bar sign) e ) lim /n-bar Gr . In different scenarios of the density growth up to (n-bar e ) lim , two types of disruptions related to the density limit were observed

Quasi-ballistic carbon nanotube array transistors with current density exceeding Si and GaAs

Science.gov (United States)

Brady, Gerald J.; Way, Austin J.; Safron, Nathaniel S.; Evensen, Harold T.; Gopalan, Padma; Arnold, Michael S.

2016-01-01

Carbon nanotubes (CNTs) are tantalizing candidates for semiconductor electronics because of their exceptional charge transport properties and one-dimensional electrostatics. Ballistic transport approaching the quantum conductance limit of 2G0 = 4e2/h has been achieved in field-effect transistors (FETs) containing one CNT. However, constraints in CNT sorting, processing, alignment, and contacts give rise to nonidealities when CNTs are implemented in densely packed parallel arrays such as those needed for technology, resulting in a conductance per CNT far from 2G0. The consequence has been that, whereas CNTs are ultimately expected to yield FETs that are more conductive than conventional semiconductors, CNTs, instead, have underperformed channel materials, such as Si, by sixfold or more. We report quasi-ballistic CNT array FETs at a density of 47 CNTs μm−1, fabricated through a combination of CNT purification, solution-based assembly, and CNT treatment. The conductance is as high as 0.46 G0 per CNT. In parallel, the conductance of the arrays reaches 1.7 mS μm−1, which is seven times higher than the previous state-of-the-art CNT array FETs made by other methods. The saturated on-state current density is as high as 900 μA μm−1 and is similar to or exceeds that of Si FETs when compared at and equivalent gate oxide thickness and at the same off-state current density. The on-state current density exceeds that of GaAs FETs as well. This breakthrough in CNT array performance is a critical advance toward the exploitation of CNTs in logic, high-speed communications, and other semiconductor electronics technologies. PMID:27617293

Real-time monitoring of school absenteeism to enhance disease surveillance: a pilot study of a mobile electronic reporting system.

Science.gov (United States)

Lawpoolsri, Saranath; Khamsiriwatchara, Amnat; Liulark, Wongwat; Taweeseneepitch, Komchaluch; Sangvichean, Aumnuyphan; Thongprarong, Wiraporn; Kaewkungwal, Jaranit; Singhasivanon, Pratap

2014-05-12

School absenteeism is a common source of data used in syndromic surveillance, which can eventually be used for early outbreak detection. However, the absenteeism reporting system in most schools, especially in developing countries, relies on a paper-based method that limits its use for disease surveillance or outbreak detection. The objective of this study was to develop an electronic real-time reporting system on school absenteeism for syndromic surveillance. An electronic (Web-based) school absenteeism reporting system was developed to embed it within the normal routine process of absenteeism reporting. This electronic system allowed teachers to update students' attendance status via mobile tablets. The data from all classes and schools were then automatically sent to a centralized database for further analysis and presentation, and for monitoring temporal and spatial patterns of absent students. In addition, the system also had a disease investigation module, which provided a link between absenteeism data from schools and local health centers, to investigate causes of fever among sick students. The electronic school absenteeism reporting system was implemented in 7 primary schools in Bangkok, Thailand, with total participation of approximately 5000 students. During May-October 2012 (first semester), the percentage of absentees varied between 1% and 10%. The peak of school absenteeism (sick leave) was observed between July and September 2012, which coincided with the peak of dengue cases in children aged 6-12 years being reported to the disease surveillance system. The timeliness of a reporting system is a critical function in any surveillance system. Web-based application and mobile technology can potentially enhance the use of school absenteeism data for syndromic surveillance and outbreak detection. This study presents the factors that determine the implementation success of this reporting system.

Polaron mobility obtained by a variational approach for lattice Fröhlich models

Science.gov (United States)

Kornjača, Milan; Vukmirović, Nenad

2018-04-01

Charge carrier mobility for a class of lattice models with long-range electron-phonon interaction was investigated. The approach for mobility calculation is based on a suitably chosen unitary transformation of the model Hamiltonian which transforms it into the form where the remaining interaction part can be treated as a perturbation. Relevant spectral functions were then obtained using Matsubara Green's functions technique and charge carrier mobility was evaluated using Kubo's linear response formula. Numerical results were presented for a wide range of electron-phonon interaction strengths and temperatures in the case of one-dimensional version of the model. The results indicate that the mobility decreases with increasing temperature for all electron-phonon interaction strengths in the investigated range, while longer interaction range leads to more mobile carriers.

Potential markets for a satellite-based mobile communications system

Science.gov (United States)

Jamieson, W. M.; Peet, C. S.; Bengston, R. J.

1976-01-01

The objective of the study was to define the market needs for improved land mobile communications systems. Within the context of this objective, the following goals were set: (1) characterize the present mobile communications industry; (2) determine the market for an improved system for mobile communications; and (3) define the system requirements as seen from the potential customer's viewpoint. The scope of the study was defined by the following parameters: (1) markets were confined to U.S. and Canada; (2) range of operation generally exceeded 20 miles, but this was not restrictive; (3) the classes of potential users considered included all private sector users, and non-military public sector users; (4) the time span examined was 1975 to 1985; and (5) highly localized users were generally excluded - e.g., taxicabs, and local paging.

Exploration and Navigation for Mobile Robots With Perceptual Limitations

Directory of Open Access Journals (Sweden)

Leonardo Romero

2006-09-01

Full Text Available To learn a map of an environment a mobile robot has to explore its workspace using its sensors. Sensors are noisy and have perceptual limitations that must be considered while learning a map. This paper considers a mobile robot with sensor perceptual limitations and introduces a new method for exploring and navigating autonomously in indoor environments. To minimize the risk of collisions as well as to not exceed the range of sensors, we introduce the concept of a travel space as a way to associate costs to grid cells of the map, based on distances to obstacles. During exploration the mobile robot minimizes its movements, including rotations, to reach the nearest unexplored region of the environment, using a dynamic programming algorithm. Once the exploration ends, the travel space is used to form a roadmap, a net of safe roads that the mobile robot can use for navigation. These exploration and navigation method are tested using a simulated and a real mobile robot with promising results.

Exploration and Navigation for Mobile Robots With Perceptual Limitations

Directory of Open Access Journals (Sweden)

Eduardo F. Morales

2008-11-01

Full Text Available To learn a map of an environment a mobile robot has to explore its workspace using its sensors. Sensors are noisy and have perceptual limitations that must be considered while learning a map. This paper considers a mobile robot with sensor perceptual limitations and introduces a new method for exploring and navigating autonomously in indoor environments. To minimize the risk of collisions as well as to not exceed the range of sensors, we introduce the concept of a travel space as a way to associate costs to grid cells of the map, based on distances to obstacles. During exploration the mobile robot minimizes its movements, including rotations, to reach the nearest unexplored region of the environment, using a dynamic programming algorithm. Once the exploration ends, the travel space is used to form a roadmap, a net of safe roads that the mobile robot can use for navigation. These exploration and navigation method are tested using a simulated and a real mobile robot with promising results.

A universal self-charging system driven by random biomechanical energy for sustainable operation of mobile electronics

Science.gov (United States)

Niu, Simiao; Wang, Xiaofeng; Yi, Fang; Zhou, Yu Sheng; Wang, Zhong Lin

2015-12-01

Human biomechanical energy is characterized by fluctuating amplitudes and variable low frequency, and an effective utilization of such energy cannot be achieved by classical energy-harvesting technologies. Here we report a high-efficient self-charging power system for sustainable operation of mobile electronics exploiting exclusively human biomechanical energy, which consists of a high-output triboelectric nanogenerator, a power management circuit to convert the random a.c. energy to d.c. electricity at 60% efficiency, and an energy storage device. With palm tapping as the only energy source, this power unit provides a continuous d.c. electricity of 1.044 mW (7.34 W m-3) in a regulated and managed manner. This self-charging unit can be universally applied as a standard `infinite-lifetime' power source for continuously driving numerous conventional electronics, such as thermometers, electrocardiograph system, pedometers, wearable watches, scientific calculators and wireless radio-frequency communication system, which indicates the immediate and broad applications in personal sensor systems and internet of things.

Medical isotope identification with large mobile detection systems

Science.gov (United States)

Mukhopadhyay, Sanjoy; Maurer, Richard

2012-10-01

The Remote Sensing laboratory (RSL) of National Security Technologies Inc. has built an array of large (5.08 - cm x 10.16 - cm x 40.6 - cm) thallium doped sodium iodide (NaI: Tl) scintillators to locate and screen gamma-ray emitting radioisotopes that are of interests to radiological emergency responders [1]. These vehicle mounted detectors provide the operators with rapid, simple, specific information for radiological threat assessment. Applications include large area inspection, customs inspection, border protection, emergency response, and monitoring of radiological facilities. These RSL mobile units are currently being upgraded to meet the Defense Threat Reduction Agency mission requirements for a next-generation system capable of detecting and identifying nuclear threat materials. One of the challenging problems faced by these gamma-ray detectors is the unambiguous identification of medical isotopes like 131I (364.49 keV [81.7%], 636.99 keV [7.17%]), 99Tcm (140.51 keV [89.1%]) and 67Ga (184.6 keV [19.7%], 300.2 [16.0%], 393.5 [4.5%] that are used in radionuclide therapy and often have overlapping gamma-ray energy regions of interest (ROI). The problem is made worse by short (about 5 seconds) acquisition time of the spectral data necessary for dynamic mobile detectors. This article describes attempts to identify medical isotopes from data collected from this mobile detection system in a short period of time (not exceeding 5 secs) and a large standoff distance (typically 10 meters) The mobile units offer identification capabilities that are based on hardware auto stabilization of the amplifier gain. The 1461 keV gamma-energy line from 40K is tracked. It uses gamma-ray energy windowing along with embedded mobile Gamma Detector Response and Analysis Software (GADRAS) [2] simultaneously to deconvolve any overlapping gamma-energy ROIs. These high sensitivity detectors are capable of resolving complex masking scenarios and exceed all ANSI N42.34 (2006) requirements

Spin dynamics in high-mobility two-dimensional electron systems embedded in GaAs/AlGaAs quantum wells

Energy Technology Data Exchange (ETDEWEB)

Griesbeck, Michael

2012-11-22

Since many years there has been great effort to explore the spin dynamics in low-dimensional electron systems embedded in GaAs/AlGaAs based heterostructures for the purpose of quantum computation and spintronics applications. Advances in technology allow for the design of high quality and well-defined two-dimensional electron systems (2DES), which are perfectly suited for the study of the underlying physics that govern the dynamics of the electron spin system. In this work, spin dynamics in high-mobility 2DES is studied by means of the all-optical time-resolved Kerr/Faraday rotation technique. In (001)-grown 2DES, a strong in-plane spin dephasing anisotropy is studied, resulting from the interference of comparable Rashba and Dresselhaus contributions to the spin-orbit field (SOF). The dependence of this anisotropy on parameters like the confinement length of the 2DES, the sample temperature, as well as the electron density is demonstrated. Furthermore, coherent spin dynamics of an ensemble of ballistically moving electrons is studied without and within an applied weak magnetic field perpendicular to the sample plane, which forces the electrons to move on cyclotron orbits. Finally, strongly anisotropic spin dynamics is investigated in symmetric (110)-grown 2DES, using the resonant spin amplification method. Here, extremely long out-of-plane spin dephasing times can be achieved, in consequence of the special symmetry of the Dresselhaus SOF.

AlGaAs/InGaAs/AlGaAs double pulse doped pseudomorphic high electron mobility transistor structures on InGaAs substrates

Science.gov (United States)

Hoke, W. E.; Lyman, P. S.; Mosca, J. J.; McTaggart, R. A.; Lemonias, P. J.; Beaudoin, R. M.; Torabi, A.; Bonner, W. A.; Lent, B.; Chou, L.-J.; Hsieh, K. C.

1997-10-01

Double pulse doped AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (PHEMT) structures have been grown on InxGa1-xAs (x=0.025-0.07) substrates using molecular beam epitaxy. A strain compensated, AlGaInAs/GaAs superlattice was used for improved resistivity and breakdown. Excellent electrical and optical properties were obtained for 110-Å-thick InGaAs channel layers with indium concentrations up to 31%. A room temperature mobility of 6860 cm2/V s with 77 K sheet density of 4.0×1012cm-2 was achieved. The InGaAs channel photoluminescence intensity was equivalent to an analogous structure on a GaAs substrate. To reduce strain PHEMT structures with a composite InGaP/AlGaAs Schottky layer were also grown. The structures also exhibited excellent electrical and optical properties. Transmission electron micrographs showed planar channel interfaces for highly strained In0.30Ga0.70As channel layers.

Precession mechanism of spin relaxation at frequent electron-electron collisions

CERN Document Server

Glazov, M M

2002-01-01

It is shown that the spin relaxation mechanism in the two-dimensional electron gas, is controlled not only through the electron pulse relaxation processes, determining the mobility, but through the electron-electron collisions as well. It is decided to use the kinetic equation, describing the electron spin mixing in the k-space, for determining the spin relaxation time tau sub s at frequent electron-electron collisions. The tau sub s time is calculated for the nondegenerated electron gas both with an account and with no account of the exchange interaction

A Pedagogical Framework for Mobile Learning: Categorizing Educational Applications of Mobile Technologies into Four Types

Directory of Open Access Journals (Sweden)

Yeonjeong Park

2011-02-01

Full Text Available Instructional designers and educators recognize the potential of mobile technologies as a learning tool for students and have incorporated them into the distance learning environment. However, little research has been done to categorize the numerous examples of mobile learning in the context of distance education, and few instructional design guidelines based on a solid theoretical framework for mobile learning exist. In this paper I compare mobile learning (m-learning with electronic learning (e-learning and ubiquitous learning (u-learning and describe the technological attributes and pedagogical affordances of mobile learning presented in previous studies. I modify transactional distance (TD theory and adopt it as a relevant theoretical framework for mobile learning in distance education. Furthermore, I attempt to position previous studies into four types of mobile learning: 1 high transactional distance socialized m-learning, 2 high transactional distance individualized m-learning, 3 low transactional distance socialized m-learning, and 4 low transactional distance individualized m-learning. As a result, this paper can be used by instructional designers of open and distance learning to learn about the concepts of mobile learning and how mobile technologies can be incorporated into their teaching and learning more effectively.

Phonon mechanism of mobility equilibrium fluctuation and properties of 1/f-noise

International Nuclear Information System (INIS)

Melkonyan, S.V.; Aroutiounian, V.M.; Gasparyan, F.V.; Asriyan, H.V.

2006-01-01

The main mechanisms of the generation of the equilibrium fluctuations of the electron mobility in homogeneous and non-degenerate semiconductors are studied. It is proven that the mobility fluctuations are related to energy fluctuations and are conditioned by random non-elastic scattering and generation-recombination processes. In particular, it is shown that the mobility fluctuations come into existence as a result of random electron-phonon and phonon-phonon scattering processes. The case of acoustic phonon-phonon scattering is considered in detail. The spectral density of the electron lattice mobility fluctuations is calculated on the base of a new phonon mechanism. It is shown that the noise spectrum over a broad frequency range has a 1/f form. The theoretical results for many samples agree with experimental data

Significant performance enhancement in AlGaN/GaN high electron mobility transistor by high-κ organic dielectric

International Nuclear Information System (INIS)

Ze-Gao, Wang; Yuan-Fu, Chen; Cao, Chen; Ben-Lang, Tian; Fu-Tong, Chu; Xing-Zhao, Liu; Yan-Rong, Li

2010-01-01

The electrical properties of AlGaN/GaN high electron mobility transistor (HEMT) with and without high-κ organic dielectrics are investigated. The maximum drain current I D max and the maximum transconductance g m max of the organic dielectric/AlGaN/GaN structure can be enhanced by 74.5%, and 73.7% compared with those of the bare AlGaN/GaN HEMT, respectively. Both the threshold voltage V T and g m max of the dielectric/AlGaN/GaN HEMT are strongly dielectric-constant-dependent. Our results suggest that it is promising to significantly improve the performance of the AlGaN/GaN HEMT by introducing the high-κ organic dielectric. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Quantification of local mobilities

DEFF Research Database (Denmark)

Zhang, Y. B.

2018-01-01

A new method for quantification of mobilities of local recrystallization boundary segments is presented. The quantification is based on microstructures characterized using electron microscopy and on determination of migration velocities and driving forces for local boundary segments. Pure aluminium...... is investigated and the results show that even for a single recrystallization boundary, different boundary segments migrate differently, and the differences can be understood based on variations in mobilities and local deformed microstructures. The present work has important implications for understanding...

Thermal decomposition of electronic wastes: Mobile phone case and other parts

International Nuclear Information System (INIS)

Molto, Julia; Egea, Silvia; Conesa, Juan Antonio; Font, Rafael

2011-01-01

Highlights: → Pyrolysis and combustion of different parts of mobile phones produce important quantities of CO and CO 2 . → Naphthalene is the most abundant PAH obtained in the thermal treatment of mobile phones. → Higher combustion temperature increases the chlorinated species evolved. - Abstract: Pyrolysis and combustion runs at 850 o C in a horizontal laboratory furnace were carried out on different parts of a mobile phone (printed circuit board, mobile case and a mixture of both materials). The analyses of the carbon oxides, light hydrocarbons, polycyclic aromatic hydrocarbons (PAHs), polychlorodibenzo-p-dioxin, polychlorodibenzofurans (PCDD/Fs), and dioxin-like PCBs are shown. Regarding semivolatile compounds, phenol, styrene, and its derivatives had the highest yields. In nearly all the runs the same PAHs were identified, naphthalene being the most common component obtained. Combustion of the printed circuit board produced the highest emission factor of PCDD/Fs, possibly due to the high copper content.

Regional Variation in Gravel Riverbed Mobility, Controlled by Hydrologic Regime and Sediment Supply

Science.gov (United States)

Pfeiffer, Allison M.; Finnegan, Noah J.

2018-04-01

The frequency and intensity of riverbed mobility are of paramount importance to the inhabitants of river ecosystems as well as to the evolution of bed surface structure. Because sediment supply varies by orders of magnitude across North America, the intensity of bedload transport varies by over an order of magnitude. Climate also varies widely across the continent, yielding a range of flood timing, duration, and intermittency. Together, the differences in sediment supply and hydroclimate result in diverse regimes of bed surface stability. To quantitatively characterize this regional variation, we calculate multidecadal time series of estimated bed surface mobility for 29 rivers using sediment transport equations. We use these data to compare predicted bed mobility between rivers and regions. There are statistically significant regional differences in the (a) exceedance probability of bed-mobilizing flows (W* > 0.002), (b) maximum bed mobility, and (c) number of discrete bed-mobilizing events in a year.

Examining the Adoption and Use of Mobile Data Services: A Consumer Behavior Analysis

DEFF Research Database (Denmark)

Tobbin, Peter Ebo

to the understanding of mobile data services acceptance, use, and the process by which consumers make the decision to adopt technology in their everyday life. It introduces an integrated mobile money adoption model (iMoMAM) which provides an understanding of consumers' socially influenced decision processes that guide...... the decision to adopt and use mobile money services. It also provides a new perspective to the determinants of end-user technology appropriation decision making. It was observed that an end-user's technology appropriation is determined by the public meaning of the technology, the end-user's private meaning......The increasing penetration of mobile phones and mobile services even in poorer communities in the developing world (where the number of mobile phones has exceeded that of bank accounts) has led to an ever-larger number of services aimed at providing development in various sectors of the economies...

Research on mobile electronic commerce security technology based on WPKI

Science.gov (United States)

Zhang, Bo

2013-07-01

Through the in-depth study on the existing mobile e-commerce and WAP protocols, this paper presents a security solution of e-commerce system based on WPKI, and describes its implementation process and specific implementation details. This solution uniformly distributes the key used by the various participating entities , to fully ensure the confidentiality, authentication, fairness and integrity of mobile e-commerce payments, therefore has some pract ical value for improving the security of e-commerce system.

Mobility field and mobility temperature dependence in PC61BM: A kinetic Monte-Carlo study

Science.gov (United States)

Sousa, Leonardo; Volpi, Riccardo; da Silva Filho, Demétrio Antônio; Linares, Mathieu

2017-12-01

A study of electron mobility in a PCBM system is performed by means of analytical considerations and Kinetic Monte Carlo simulations. Orbital energies are calculated at the ZINDO level of theory and successively corrected considering contributions from permanent charges and polarization interactions. The relative importance of these environmental effects is analyzed in details, furthermore the predicted mobilities are compared with experimental results and similar simulations performed in C60.

Interface characteristics of spin-on-dielectric SiO{sub x}-buffered passivation layers for AlGaN/GaN high electron mobility transistors

Energy Technology Data Exchange (ETDEWEB)

Ko, Pil-Seok; Park, Kyoung-Seok; Yoon, Yeo-Chang [Division of Electronics and Electrical Engineering, Dongguk University, 100-715 Seoul (Korea, Republic of); Sheen, Mi-Hyang [Department of Materials Science Engineering, Seoul National University, 151-742 Seoul (Korea, Republic of); Kim, Sam-Dong, E-mail: samdong@dongguk.edu [Division of Electronics and Electrical Engineering, Dongguk University, 100-715 Seoul (Korea, Republic of)

2015-08-31

To reveal the cause for significant enhancement of dc current performance of the AlGaN/GaN high electron mobility transistors (HEMTs) with the spin-on-dielectric (SOD) SiO{sub x}-buffered passivation structure compared to the conventional Si{sub 3}N{sub 4} passivation deposited by plasma-enhanced vapor deposition (PECVD), we characterized the passivation interfaces using the cross-sectional transmission electron microscopy, cathodoluminescence, capacitance–voltage (C–V) characterizations, and Hall-effect measurements. The interface state density of PECVD Si{sub 3}N{sub 4} passivation was in the range of 10{sup 12}–10{sup 13} cm{sup −2} eV{sup −1}, which is one-order higher than that of the SOD (10{sup 11}–10{sup 12} cm{sup −2} eV{sup −1}) as measured by C–V measurements from the metal–insulator–semiconductor capacitors. Higher density of effective oxide charge density (especially dominant contribution of ionic mobile charge) was also derived from the PECVD Si{sub 3}N{sub 4} passivation. A well-resolved reduction of the electron Hall mobility of the Si{sub 3}N{sub 4} passivation compared to that of the perhydropolysilazane SOD passivation, which can be due to the higher-density interface states and trap charges, can answer the relative dc current collapse of our HEMT devices. - Highlights: • Spin-on-dielectric (SOD)-buffered passivation for AlGaN/GaN HEMTs • Characterize the charge density and interface states using the C–V measurements • SOD-buffered passivation minimizes surface states at the interface. • DC performance of SOD-buffered structure is due to the interface characteristics.

Can LENR Energy Gains Exceed 1000?

Science.gov (United States)

Nagel, David J.

2011-03-01

Energy gain is defined as the energy realized from reactions divided by the energy required to produce those reactions. Low Energy Nuclear Reactions (LENR) have already been measured to significantly exceed the energy gain of 10 projected from ITER,possibly 15 years from now. Electrochemical experiments using the Pd-D system have shown energy gains exceeding 10. Gas phase experiments with the Ni-H system were reported to yield energy gains of over 100. Neither of these reports has been adequately verified or reproduced. However, the question in the title still deserves consideration. If, as thought by many, it is possible to trigger nuclear reactions that yield MeV energies with chemical energies of the order of eV, then the most optimistic expectation is that LENR gains could approach one million. Hence, the very tentative answer to the question above is yes. However, if LENR could be initiated with some energy cost, and then continue to ``burn,'' very high energy gains might be realized. Consider a match and a pile of dry logs. The phenomenon termed ``heat after death'' will be examined to see if it might be the initial evidence for nuclear ``burning.''

Key-Insulated Undetachable Digital Signature Scheme and Solution for Secure Mobile Agents in Electronic Commerce

Directory of Open Access Journals (Sweden)

Yang Shi

2016-01-01

Full Text Available Considering the security of both the customers’ hosts and the eShops’ servers, we introduce the idea of a key-insulated undetachable digital signature, enabling mobile agents to generate undetachable digital signatures on remote hosts with the key-insulated property of the original signer’s signing key. From the theoretical perspective, we provide the formal definition and security notion of a key-insulated undetachable digital signature. From the practical perspective, we propose a concrete scheme to secure mobile agents in electronic commerce. The scheme is mainly focused on protecting the signing key from leakage and preventing the misuse of the signature algorithm on malicious servers. Agents do not carry the signing key when they generate digital signatures on behalf of the original signer, so the key is protected on remote servers. Furthermore, if a hacker gains the signing key of the original signer, the hacker is still unable to forge a signature for any time period other than the key being accessed. In addition, the encrypted function is combined with the original signer’s requirement to prevent the misuse of signing algorithm. The scheme is constructed on gap Diffie–Hellman groups with provable security, and the performance testing indicates that the scheme is efficient.

High Temperature Terahertz Detectors Realized by a GaN High Electron Mobility Transistor

Science.gov (United States)

Hou, H. W.; Liu, Z.; Teng, J. H.; Palacios, T.; Chua, S. J.

2017-04-01

In this work, a high temperature THz detector based on a GaN high electron mobility transistor (HEMT) with nano antenna structures was fabricated and demonstrated to be able to work up to 200 °C. The THz responsivity and noise equivalent power (NEP) of the device were characterized at 0.14 THz radiation over a wide temperature range from room temperature to 200 °C. A high responsivity Rv of 15.5 and 2.7 kV/W and a low NEP of 0.58 and 10 pW/Hz0.5 were obtained at room temperature and 200 °C, respectively. The advantages of the GaN HEMT over other types of field effect transistors for high temperature terahertz detection are discussed. The physical mechanisms responsible for the temperature dependence of the responsivity and NEP of the GaN HEMT are also analyzed thoroughly.

Kink effect and noise performance in isolated-gate InAs/AlSb high electron mobility transistors

International Nuclear Information System (INIS)

Vasallo, B G; González, T; Mateos, J; Rodilla, H; Moschetti, G; Grahn, J

2012-01-01

The kink effect can spoil the otherwise excellent low noise performance of InAs/AlSb high electron mobility transistors. It has its origin in the pile-up of holes (generated by impact ionization) taking place mainly at the drain side of the buffer, which leads to a reduction of the gate-induced channel depletion and results in a drain current enhancement. Our results indicate that the generation of holes by impact ionization and their further recombination lead to fluctuations in the charge of the hole pile-up, which provoke an important increase in the drain current noise, even when the kink effect is hardly perceptible in the output characteristics. (paper)

Mobile Opportunities and Applications for E-service Innovations

DEFF Research Database (Denmark)

Scupola, Ada

Mobile technology continues to shape our society, delivering information and knowledge right to our finger tips. It is only fitting that these advancements and opportunities are applied to the area of electronic services. Mobile Opportunities and Applications for E-Service Innovations brings...

Anti-money laundering regulations and the effective use of mobile ...

African Journals Online (AJOL)

Potchefstroom Electronic Law Journal/Potchefstroomse Elektroniese Regsblad ... Mobile financial services, specifically mobile money, has the potential to expand ... controls regarding money or value transfer services and new technologies.

Using mobile source emission reductions to offset stationary surce rule requirements

International Nuclear Information System (INIS)

Nazemi, M.A.; Beruldsen, K.J.

1993-01-01

A number of mobile source strategies have been evaluated that could potentially be used as an alternative means of compliance with existing stationary source regulations, at a lower cost. The evaluation was spurred by both public and private sector interest in identifying the lowest cost air pollution reduction strategies, and the realization that mobile sources are the predominate contributor to the air pollution problem in the South Coast Air Quality Basin. Strategies evaluated included removing older vehicles from the in-use population, use of alternative fuels, inspection and maintenance measures, application of remote sensing technology, exceeding AVR requirements, as well as a number of other strategies. Key implementation issues have been identified, so that the viability of each mobile source strategies could be assessed. These issues include: (1) quantification of emissions benefits, (2) determining whether the mobile source strategy would generate emission reductions surplus to existing and planned mobile source regulations, and (3) assessing the potential for enforceability. The results of evaluation indicate that there are a number of promising mobile source emission strategies that could provide quantifiable, surplus, and enforceable emission reductions

Capillary-Physics Mechanism of Elastic-Wave Mobilization of Residual Oil

Science.gov (United States)

Beresnev, I. A.; Pennington, W. D.; Turpening, R. M.

2003-12-01

Much attention has been given to the possibility of vibratory mobilization of residual oil as a method of enhanced recovery. The common features of the relevant applications have nonetheless been inconsistency in the results of field tests and the lack of understanding of a physical mechanism that would explain variable experiences. Such a mechanism can be found in the physics of capillary trapping of oil ganglia, driven through the pore channels by an external pressure gradient. Entrapping of ganglia occurs due to the capillary pressure building on the downstream meniscus entering a narrow pore throat. The resulting internal-pressure imbalance acts against the external gradient, which needs to exceed a certain threshold to carry the ganglion through. The ganglion flow thus exhibits the properties of the Bingham (yield-stress) flow, not the Darcy flow. The application of vibrations is equivalent to the addition of an oscillatory forcing to the constant gradient. When this extra forcing acts along the gradient, an instant "unplugging" occurs, while, when the vibration reverses direction, the flow is plugged. This asymmetry results in an average non-zero flow over one period of vibration, which explains the mobilization effect. The minimum-amplitude and maximum-frequency thresholds apply for the mobilization to occur. When the vibration amplitude exceeds a certain "saturation" level, the flow returns to the Darcy regime. The criterion of the mobilization of a particular ganglion involves the parameters of both the medium (pore geometry, interfacial and wetting properties, fluid viscosity) and the oscillatory field (amplitude and frequency). The medium parameters vary widely under natural conditions. It follows that an elastic wave with a given amplitude and frequency will always produce a certain mobilization effect, mobilizing some ganglia and leaving others intact. The exact macroscopic effect is hard to predict, as it will represent a response of the populations

Retrospective reconstruction of personal doses using mobile phones

International Nuclear Information System (INIS)

Ekendahl, Daniela

2011-01-01

Mobile phones are among objects usable for retrospective reconstruction of doses received by persons irradiated from serious radiation accidents or terrorist acts involving radioactivity. In this respect, it is an advantage of mobile phones that they are often worn close to the body and are used by the majority of population. Like other portable electronic devices, mobile phones contain electronic components which can include ceramic materials exhibiting radiation induced luminescence. Aluminium oxide (Al2O3) is an example; its layers are often used in chip resistors. This work summarizes the results of a pilot study investigating the dosimetric potential of Al2O3 measured via thermoluminescence (TL) and optically stimulated luminescence (OSL). A trial dose reconstruction performed with two mobile phones is described. It is shown that the material exhibits favourable dosimetric properties and the method is sufficiently accurate and operative for personal accident dosimetry purposes. (orig.)

Widely bandgap tunable amorphous Cd–Ga–O oxide semiconductors exhibiting electron mobilities ≥10 cm{sup 2 }V{sup −1 }s{sup −1}

Energy Technology Data Exchange (ETDEWEB)

Yanagi, Hiroshi, E-mail: hyanagi@yamanashi.ac.jp [Graduate Faculty of Interdisciplinary Research, University of Yamanashi, 4-4-37 Takeda, Kofu, Yamanashi 400-8510 (Japan); Sato, Chiyuki; Kimura, Yota [Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, 4-4-37 Takeda, Kofu, Yamanashi 400-8510 (Japan); Suzuki, Issei; Omata, Takahisa [Division of Material and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Kamiya, Toshio [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox S2-16, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Hosono, Hideo [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox S2-16, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Frontier Research Center, Tokyo Institute of Technology, Mailbox S2-16, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)

2015-02-23

Amorphous oxide semiconductors exhibit large electron mobilities; however, their bandgaps are either too large for solar cells or too small for deep ultraviolet applications depending on the materials system. Herein, we demonstrate that amorphous Cd–Ga–O semiconductors display bandgaps covering the entire 2.5–4.3 eV region while maintaining large electron mobilities ≥10 cm{sup 2 }V{sup −1 }s{sup −1}. The band alignment diagram obtained by ultraviolet photoemission spectroscopy and the bandgap values reveal that these semiconductors form type-II heterojunctions with p-type Cu{sub 2}O, which is suitable for solar cells and solar-blind ultraviolet sensors.

A mobile and asynchronous electronic data capture system for epidemiologic studies.

Science.gov (United States)

Meyer, Jens; Fredrich, Daniel; Piegsa, Jens; Habes, Mohamad; van den Berg, Neeltje; Hoffmann, Wolfgang

2013-06-01

A Central Data Management (CDM) system based on electronic data capture (EDC) software and study specific databases is an essential component for assessment and management of large data volumes in epidemiologic studies. Conventional CDM systems using web applications for data capture depend on permanent access to a network. However, in many study settings permanent network access cannot be guaranteed, e.g. when participants/patients are visited in their homes. In such cases a different concept for data capture is needed. The utilized EDC software must be able to ensure data capture as stand-alone instance and to synchronize captured data with the server at a later point in time. This article describes the design of the mobile information capture (MInCa) system an EDC software meeting these requirements. In particular, we focus on client and server design, data synchronization, and data privacy as well as data security measures. The MInCa software has already proven its efficiency in epidemiologic studies revealing strengths and weaknesses concerning both concept and practical application which will be addressed in this article. Copyright © 2012 Elsevier Ireland Ltd. All rights reserved.

Mobile Technologies for Parent/Child Relationships

DEFF Research Database (Denmark)

Yarosh, Svetlana; Davis, Hilary; Modlitba, Paulina

2009-01-01

Children are one of the largest new user groups of mobile technology -- from phones to micro-laptops to electronic toys. These products are both lauded and criticized, especially when it comes to their role in education and learning. The need has never been greater to understand how...... these technologies are being designed and to evaluate their impact worldwide. Mobile Technology for Children brings together contributions from leaders in industry, non-profit organizations, and academia to offer practical solutions for the design and the future of mobile technology for children....

Anisotropic carrier mobility in single- and bi-layer C3N sheets

Science.gov (United States)

Wang, Xueyan; Li, Qingfang; Wang, Haifeng; Gao, Yan; Hou, Juan; Shao, Jianxin

2018-05-01

Based on the density functional theory combined with the Boltzmann transport equation with relaxation time approximation, we investigate the electronic structure and predict the carrier mobility of single- and bi-layer newly fabricated 2D carbon nitrides C3N. Although C3N sheets possess graphene-like planar hexagonal structure, the calculated carrier mobility is remarkably anisotropic, which is found mainly induced by the anisotropic effective masses and deformation potential constants. Importantly, we find that both the electron and hole mobilities are considerable high, for example, the hole mobility along the armchair direction of single-layer C3N sheets can arrive as high as 1.08 ×104 cm2 V-1 s-1, greatly larger than that of C2N-h2D and many other typical 2D materials. Owing to the high and anisotropic carrier mobility and appropriate band gap, single- and bi-layer semiconducting C3N sheets may have great potential applications in high performance electronic and optoelectronic devices.

Investigation of plasmonic resonances in the two-dimensional electron gas of an InGaAs/InP high electron mobility transistor

Science.gov (United States)

Cleary, Justin W.; Peale, Robert E.; Saxena, Himanshu; Buchwald, Walter R.

2011-05-01

The observation of THz regime transmission resonances in an InGaAs/InP high electron mobility transistor (HEMT) can be attributed to excitation of plasmons in its two-dimensional electron gas (2DEG). Properties of grating-based, gate-voltage tunable resonances are shown to be adequately modeled using commercial finite element method (FEM) software when the HEMT layer structure, gate geometry and sheet charge concentration are taken into account. The FEM results are shown to produce results consistent with standard analytical theories in the 10-100 cm-1 wavenumber range. An original analytic formula presented here describes how the plasmonic resonance may change in the presence of a virtual gate, or region of relatively high free charge carriers that lies in the HEMT between the physical grating gate and the 2DEG. The virtual gate and corresponding analytic formulation are able to account for the red-shifting experimentally observed in plasmonic resonances. The calculation methods demonstrated here have the potential to greatly aid in the design of future detection devices that require specifically tuned plasmonic modes in the 2DEG of a HEMT, as well as giving new insights to aid in the development of more complete analytic theories.

Metalorganic chemical vapor deposition growth and thermal stability of the AlInN/GaN high electron mobility transistor structure

International Nuclear Information System (INIS)

Yu, Hongbo; Ozturk, Mustafa; Demirel, Pakize; Cakmak, Huseyin; Bolukbas, Basar; Caliskan, Deniz; Ozbay, Ekmel

2011-01-01

The Al x In 1−x N barrier high electron mobility transistor (HEMT) structure has been optimized with varied barrier composition and thickness grown by metalorganic chemical vapor deposition. After optimization, a transistor structure comprising a 7 nm thick nearly lattice-matched Al 0.83 In 0.17 N barrier exhibits a sheet electron density of 2.0 × 10 13 cm −2 with a high electron mobility of 1540 cm 2 V −1 s −1 . An Al 0.83 In 0.17 N barrier HEMT device with 1 µm gate length provides a current density of 1.0 A mm −1 at V GS = 0 V and an extrinsic transconductance of 242 mS mm −1 , which are remarkably improved compared to that of a conventional Al 0.3 Ga 0.7 N barrier HEMT. To investigate the thermal stability of the HEMT epi-structures, post-growth annealing experiments up to 800 °C have been applied to Al 0.83 In 0.17 N and Al 0.3 Ga 0.7 N barrier heterostructures. As expected, the electrical properties of an Al 0.83 In 0.17 N barrier HEMT structure showed less stability than that of an Al 0.3 Ga 0.7 N barrier HEMT to the thermal annealing. The structural properties of Al 0.83 In 0.17 N/GaN also showed more evidence for decomposition than that of the Al 0.3 Ga 0.7 N/GaN structure after 800 °C post-annealing

Study of the enhancement-mode AlGaN/GaN high electron mobility transistor with split floating gates

Science.gov (United States)

Wang, Hui; Wang, Ning; Jiang, Ling-Li; Zhao, Hai-Yue; Lin, Xin-Peng; Yu, Hong-Yu

2017-11-01

In this work, the charge storage based split floating gates (FGs) enhancement mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) are studied. The simulation results reveal that under certain density of two dimensional electron gas, the variation tendency of the threshold voltage (Vth) with the variation of the blocking dielectric thickness depends on the FG charge density. It is found that when the length sum and isolating spacing sum of the FGs both remain unchanged, the Vth shall decrease with the increasing FGs number but maintaining the device as E-mode. It is also reported that for the FGs HEMT, the failure of a FG will lead to the decrease of Vth as well as the increase of drain current, and the failure probability can be improved significantly with the increase of FGs number.

Millimeter-wave small-signal modeling with optimizing sensitive-parameters for metamorphic high electron mobility transistors

International Nuclear Information System (INIS)

Moon, S-W; Baek, Y-H; Han, M; Rhee, J-K; Kim, S-D; Oh, J-H

2010-01-01

In this paper, we present a simple and reliable technique for determining the small-signal equivalent circuit model parameters of the 0.1 µm metamorphic high electron mobility transistors (MHEMTs) in a millimeter-wave frequency range. The initial eight extrinsic parameters of the MHEMT are extracted using two S-parameter (scattering parameter) sets measured under the pinched-off and zero-biased cold field-effect transistor conditions by avoiding the forward gate biasing. Furthermore, highly calibration-sensitive values of the R s , L s and C pd are optimized by using a gradient optimization method to improve the modeling accuracy. The accuracy enhancement of this procedure is successfully verified with an excellent correlation between the measured and calculated S-parameters up to 65 GHz

Comprehensive magnetotransport characterization of two dimensional electron gas in AlGaN/GaN high electron mobility transistor structures leading to the assessment of interface roughness

Energy Technology Data Exchange (ETDEWEB)

Mishra, Manna Kumari [Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi-110054 (India); Netaji Subhas Institute of Technology, Dwarka, New Delhi-110078 (India); Sharma, Rajesh K., E-mail: rksharma@sspl.drdo.in; Manchanda, Rachna; Bag, Rajesh K.; Muralidharan, Rangarajan [Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi-110054 (India); Thakur, Om Prakash [Netaji Subhas Institute of Technology, Dwarka, New Delhi-110078 (India)

2014-09-15

Magnetotransport in two distinct AlGaN/GaN HEMT structures grown by Molecular Beam Epitaxy (MBE) on Fe-doped templates is investigated using Shubnikov de-Haas Oscillations in the temperature range of 1.8–6 K and multicarrier fitting in the temperature range of 1.8–300 K. The temperature dependence of the two dimensional electron gas mobility is extracted from simultaneous multicarrier fitting of transverse and longitudinal resistivity as a function of magnetic field and the data is utilized to estimate contribution of interface roughness to the mobility and the corresponding transport lifetime. The quantum scattering time obtained from the analysis of Shubnikov de Haas Oscillations in transverse magnetoresistance along with the transport lifetime time were used to estimate interface roughness amplitude and lateral correlation length. The results indicate that the insertion of AlN over layer deposited prior to the growth of GaN base layer on Fe doped GaN templates for forming HEMT structures reduced the parallel conduction but resulted in an increase in interface roughness.

Comprehensive magnetotransport characterization of two dimensional electron gas in AlGaN/GaN high electron mobility transistor structures leading to the assessment of interface roughness

International Nuclear Information System (INIS)

Mishra, Manna Kumari; Sharma, Rajesh K.; Manchanda, Rachna; Bag, Rajesh K.; Muralidharan, Rangarajan; Thakur, Om Prakash

2014-01-01

Magnetotransport in two distinct AlGaN/GaN HEMT structures grown by Molecular Beam Epitaxy (MBE) on Fe-doped templates is investigated using Shubnikov de-Haas Oscillations in the temperature range of 1.8–6 K and multicarrier fitting in the temperature range of 1.8–300 K. The temperature dependence of the two dimensional electron gas mobility is extracted from simultaneous multicarrier fitting of transverse and longitudinal resistivity as a function of magnetic field and the data is utilized to estimate contribution of interface roughness to the mobility and the corresponding transport lifetime. The quantum scattering time obtained from the analysis of Shubnikov de Haas Oscillations in transverse magnetoresistance along with the transport lifetime time were used to estimate interface roughness amplitude and lateral correlation length. The results indicate that the insertion of AlN over layer deposited prior to the growth of GaN base layer on Fe doped GaN templates for forming HEMT structures reduced the parallel conduction but resulted in an increase in interface roughness

Stability of a mobile electron linear accelerator system for intraoperative radiation therapy

International Nuclear Information System (INIS)

Beddar, A. Sam

2005-01-01

The flexibility of mobile electron accelerators, which are designed to be transported to an operating room and plugged into a normal 3-phase outlet, make them ideal for use in intraoperative radiation therapy. However, their transportability may cause trepidation among potential users, who may question the stability of such an accelerator over a period of use. In order to address this issue, we have studied the short-term stability of the Mobetron system over 20 daily quality assurance trials. Variations in output generally varied within ±2% for the four energies produced by the unit (4, 6, 9, and 12 MeV) and changes in energy produced an equivalent shift of less than 1 mm on the depth-dose curve. Hours of inactivity, with the Mobetron powered on for use either throughout the day or overnight, led to variations in output of about 1%. Finally, we have tested the long-term stability of the absolute dose output of the Mobetron, which showed a change of about 1% per year

Model of electron capture in low-temperature glasses

International Nuclear Information System (INIS)

Bartczak, W.M.; Swiatla, D.; Kroh, J.

1983-01-01

The new model of electron capture by a statistical variety of traps in glassy matrices is proposed. The electron capture is interpreted as the radiationless transition (assisted by multiphonon emission) of the mobile electron to the localized state in the trap. The conception of 'unfair' and 'fair' traps is introduced. The 'unfair' trap captures the mobile electron by the shallow excited state. In contrast, the 'fair' trap captures the electron by the ground state. The model calculations of the statistical distributions of the occupied electron traps are presented and discussed with respect to experimental results. (author)

Prediction in Partial Duration Series With Generalized Pareto-Distributed Exceedances

DEFF Research Database (Denmark)

Rosbjerg, Dan; Madsen, Henrik; Rasmussen, Peter Funder

1992-01-01

As a generalization of the common assumption of exponential distribution of the exceedances in Partial duration series the generalized Pareto distribution has been adopted. Estimators for the parameters are presented using estimation by both method of moments and probability-weighted moments...... distributions (with physically justified upper limit) the correct exceedance distribution should be applied despite a possible acceptance of the exponential assumption by a test of significance....

Charge-transfer mobility and electrical conductivity of PANI as conjugated organic semiconductors.

Science.gov (United States)

Zhang, Yahong; Duan, Yuping; Song, Lulu; Zheng, Daoyuan; Zhang, Mingxing; Zhao, Guangjiu

2017-09-21

The intramolecular charge transfer properties of a phenyl-end-capped aniline tetramer (ANIH) and a chloro-substituted derivative (ANICl) as organic semiconductors were theoretically studied through the first-principles calculation based on the Marcus-Hush theory. The reorganization energies, intermolecular electronic couplings, angular resolution anisotropic mobilities, and density of states of the two crystals were evaluated. The calculated results demonstrate that both ANIH and ANICl crystals show the higher electron transfer mobilities than the hole-transfer mobilities, which means that the two crystals should prefer to function as n-type organic semiconductors. Furthermore, the angle dependence mobilities of the two crystals show remarkable anisotropic character. The maximum mobility μ max of ANIH and ANICl crystals is 1.3893 and 0.0272 cm 2 V -1 s -1 , which appear at the orientation angles near 176°/356° and 119°/299° of a conducting channel on the a-b reference plane. It is synthetically evaluated that the ANIH crystal possesses relatively lower reorganization energy, higher electronic coupling, and electron transfer mobility, which means that the ANIH crystal may be the more ideal candidate as a high performance n-type organic semiconductor material. The systematic theoretical studies on organic crystals should be conducive to evaluating the charge-transport properties and designing higher performance organic semiconductor materials.

ADDED VALUE-BASED APROACH TO ANALYZE ELECTRONIC COMMERCE AND MOBILE COMMERCE BUSINESS MODELS

Directory of Open Access Journals (Sweden)

Moritz Weizmann

2004-03-01

Full Text Available

Se propone aplicar la teoría del valor informacional agregado (Theory of Informational Added Values, IAV al Electronic Commerce (EC y al Mobile Commerce (MC. El trabajo presentado es una propuesta para acercarse a modelos de negocio, con el foco de criterios típicos de evaluación para modelos de negocio de Internet y del MC. Es también conveniente para comparar modelos de negocio distintos y para poner el valor añadido para los participantes en un contexto. De esta manera, se establecen criterios objetivos que reducen la subjetividad y permiten hacer ciertas predicciones. El artículo termina con un análisis crítico del estado del arte y un comentario sobre las perspectivas futuras.

Absolute Negative Resistance Induced by Directional Electron-Electron Scattering in a Two-Dimensional Electron Gas

Science.gov (United States)

Kaya, Ismet I.; Eberl, Karl

2007-05-01

A three-terminal device formed by two electrostatic barriers crossing an asymmetrically patterned two-dimensional electron gas displays an unusual potential depression at the middle contact, yielding absolute negative resistance. The device displays momentum and current transfer ratios that far exceed unity. The observed reversal of the current or potential in the middle terminal can be interpreted as the analog of Bernoulli’s effect in a Fermi liquid. The results are explained by directional scattering of electrons in two dimensions.

Various Recipes of SiNx Passivated AlGaN/GaN High Electron Mobility Transistors in Correlation with Current Slump

International Nuclear Information System (INIS)

Ling, Yang; Yue, Hao; Xiao-Hua, Ma; Si, Quan; Gui-Zhou, Hu; Shou-Gao, Jiang; Li-Yuan, Yang

2009-01-01

The current slump of different recipes of SiN x passivated AlGaN/GaN high electron mobility transistors (HEMTs) is investigated. The dc and pulsed current-voltage curves of AlGaN/GaN HEMTs using different recipes are analyzed. It is found that passivation leakage has a strong relationship with NH 3 flow in the plasma-enhanced chemical vapor phase deposition process, which has impacted on the current collapse of SiN x passivated devices. We analyze the pulsed I DS – V DS characteristics of different recipes of SiN x passivation devices for different combinations of gate and drain quiescent biases (V GS0 , V DS0 ) of (0, 0), (−6, 0), (−6, 15) and (0, 15)V. The possible mechanisms are the traps in SiN x passivation capturing the electrons and the surface states at the SiN x /AlGaN interface, which can affect the channel of two-dimensional electron gas and cause the current collapse. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Simulation study of InAlN/GaN high-electron mobility transistor with AlInN back barrier

International Nuclear Information System (INIS)

Han Tie-Cheng; Zhao Hong-Dong; Yang Lei; Wang Yang

2017-01-01

In this work, we use a 3-nm-thick Al 0.64 In 0.36 N back-barrier layer in In 0.17 Al 0.83 N/GaN high-electron mobility transistor (HEMT) to enhance electron confinement. Based on two-dimensional device simulations, the influences of Al 0.64 In 0.36 N back-barrier on the direct-current (DC) and radio-frequency (RF) characteristics of InAlN/GaN HEMT are investigated, theoretically. It is shown that an effective conduction band discontinuity of approximately 0.5 eV is created by the 3-nm-thick Al 0.64 In 0.36 N back-barrier and no parasitic electron channel is formed. Comparing with the conventional InAlN/GaN HEMT, the electron confinement of the back-barrier HEMT is significantly improved, which allows a good immunity to short-channel effect (SCE) for gate length decreasing down to 60 nm (9-nm top barrier). For a 70-nm gate length, the peak current gain cut-off frequency ( f T ) and power gain cut-off frequency ( f max ) of the back-barrier HEMT are 172 GHz and 217 GHz, respectively, which are higher than those of the conventional HEMT with the same gate length. (paper)

Some aspects of electron dynamics in solid alkanes

International Nuclear Information System (INIS)

Cheng, I.I.; Funabashi, K.

1975-01-01

The excess electron mobility in 3-methylpentane (3MP) is in the range of 0.02-0.1 cm 2 /v.s. for 4.2-85 0 K. The mobility is nearly independent of temperature below 35 0 K, while the activation energy is about 0.01 eV for 35 0 K-85 0 K. The magnitude of mobility and its temperature dependence are consistent with the hopping and tunneling motion of electron between trapped (or localized) states. The decay kinetics of the absorption spectrum of trapped electrons in 3MP also suggest the presence of many trapping sites, and a small mean free path of retrapping for a quasi-free electron. It is conjectured that the electron-transport in 3MP glass is the phonon-assisted hopping or tunneling and the mean free path (or the mobility) at the quasi-free state is not as large as 100 A (or 150 cm 2 /v.s.). The mean free path of scattering for an excess electron at the quasi-free level in various alkane glasses can be found approximately from measurement of attenuation constants for electron beams (Chang and Berry). The relationship of these attenuation constants with V 0 (quasi-free state) will be discussed. The effect of electron-phonon coupling on the effective mass of excess electrons will also be discussed in terms of a simple model. The effective mass is a sensitive function of the ratio of the relaxation energy to the phonon energy

Correlation of AlGaN/GaN high-electron-mobility transistors electroluminescence characteristics with current collapse

Science.gov (United States)

Ohi, Shintaro; Yamazaki, Taisei; Asubar, Joel T.; Tokuda, Hirokuni; Kuzuhara, Masaaki

2018-02-01

We report on the correlation between the electroluminescence and current collapse of AlGaN/GaN high-electron-mobility transistors (HEMTs). Standard passivated devices suffering from severe current collapse exhibited high-intensity whitish electroluminescence confined near the drain contact. In contrast, devices with reduced current collapse resulting from oxygen plasma treatment or GaN capping showed low-intensity reddish emission across the entire gate-drain access region. A qualitative explanation of this observed correlation between the current collapse and electroluminescence is presented. Our results demonstrate that electroluminescence analysis is a powerful tool not only for identifying high-field regions but also for assessing the degree of current collapse in AlGaN/GaN HEMTs.

Investigation of structural, optical, and electrical characteristics of an AlGaN/GaN high electron mobility transistor structure across a 200 mm Si(1 1 1) substrate

International Nuclear Information System (INIS)

Perozek, J; Lee, H-P; Bayram, C; Krishnan, B; Paranjpe, A; Reuter, K B; Sadana, D K

2017-01-01

An AlGaN/GaN high electron mobility transistor (HEMT) structure is grown on a 200 mm Si(1 1 1) substrate. The AlGaN/AlN/GaN heterostructure atop, which forms the 2D electron gas, is studied via transmission electron microscopy (TEM), scanning tunneling microscopy, and TEM chemical analysis. To quantify the uniformity of structural, optical, and electrical properties of these AlGaN/GaN HEMT structures, scanning electron microscopy, optical microscopy, atomic-force microscopy, x-ray diffraction ( ω /2 θ scan and reciprocal space mapping) and Hall effect measurements are employed across the center, middle, and edge of the 200 mm wafer. Small thickness (<3%) and Al-content (<3%) variations in (Al)GaN layers across the wafer are recorded whereas a considerable change (28%) in the electron mobility is observed across the wafer that correlates with variations in surface roughness, defectivity, and layer stress. We attribute the higher mobility in the middle of the wafer to lower interface scattering, thanks to lower surface roughness and less edge-type dislocation density. Additionally, argon (Ar) ion implantation is used as a means for planar electrical isolation, and a seven orders of magnitude decrease in leakage current is achieved when an optimum Ar dose of 10 13 cm −2 is used. The feasibility of scaling AlGaN/GaN HEMTs on a 200 mm Si(1 1 1) platform is discussed. (paper)

Modified Monte Carlo method for study of electron transport in degenerate electron gas in the presence of electron-electron interactions, application to graphene

Science.gov (United States)

Borowik, Piotr; Thobel, Jean-Luc; Adamowicz, Leszek

2017-07-01

Standard computational methods used to take account of the Pauli Exclusion Principle into Monte Carlo (MC) simulations of electron transport in semiconductors may give unphysical results in low field regime, where obtained electron distribution function takes values exceeding unity. Modified algorithms were already proposed and allow to correctly account for electron scattering on phonons or impurities. Present paper extends this approach and proposes improved simulation scheme allowing including Pauli exclusion principle for electron-electron (e-e) scattering into MC simulations. Simulations with significantly reduced computational cost recreate correct values of the electron distribution function. Proposed algorithm is applied to study transport properties of degenerate electrons in graphene with e-e interactions. This required adapting the treatment of e-e scattering in the case of linear band dispersion relation. Hence, this part of the simulation algorithm is described in details.

Mobile banking: New trend in the contemporary banking sector

Directory of Open Access Journals (Sweden)

Sanader Dušica

2014-01-01

Full Text Available In the late 1990s and early 2000s, banking has undergone and is still undergoing some considerable changes, adjusting itself to the new circumstances and challenges in its environment. Modern information technologies have granted an opportunity to banks to expand their operations and adjust their offer of products and services, placing them through the new communication channels. The increasing reliance on mobile devices, especially the so-called smart phones, has facilitated the development of a new form of banking, known as mobile banking. Mobile banking is a specific channel of electronic banking, enabling clients to communicate with the bank via mobile devices. The bank's products and services are, thus, available to the clients at any time and at any place, and the banking sector is expected to perfectly understand the needs of today's clients, before implementing mobile banking. The research in this paper focuses on mobile banking, as a segment of electronic banking, which has developed under the influence of modern information technologies. The paper elaborates on the main characteristics of mobile banking, its advantages, but also its drawbacks that the banks and their clients are facing in the process of its utilization (or its implementation in practice. Moreover, the paper presents the trends of using mobile banking in the world and in Serbia, along with the tendencies for developing new services.

Experiences in running a complex electronic data capture system using mobile phones in a large-scale population trial in southern Nepal

OpenAIRE

Style, S.; Beard, B. J.; Harris-Fry, H.; Sengupta, A.; Jha, S.; Shrestha, B. P.; Rai, A.; Paudel, V.; Thondoo, M.; Pulkki-Brannstrom, A-M; Skordis-Worrall, J.; Manandhar, D. S.; Costello, A.; Saville, N. M.

2017-01-01

The increasing availability and capabilities of mobile phones make them a feasible means of data collection. Electronic Data Capture (EDC) systems have been used widely for public health monitoring and surveillance activities, but documentation of their use in complicated research studies requiring multiple systems is limited. This paper shares our experiences of designing and implementing a complex multi-component EDC system for a community-based four-armed cluster-Randomised Controlled Tria...

Experiences in running a complex electronic data capture system using mobile phones in a large-scale population trial in southern Nepal

OpenAIRE

Style, Sarah; Beard, B. James; Harris-Fry, Helen; Sengupta, Aman; Jha, Sonali; Shrestha, Bhim P.; Rai, Anjana; Paudel, Vikas; Thondoo, Meelan; Pulkki-Brannstrom, Anni-Maria; Skordis-Worrall, Jolene; Manandhar, Dharma S.; Costello, Anthony; Saville, Naomi M.

2017-01-01

ABSTRACT The increasing availability and capabilities of mobile phones make them a feasible means of data collection. Electronic Data Capture (EDC) systems have been used widely for public health monitoring and surveillance activities, but documentation of their use in complicated research studies requiring multiple systems is limited. This paper shares our experiences of designing and implementing a complex multi-component EDC system for a community-based four-armed cluster-Randomised Contro...

Mobile communication in the global south

DEFF Research Database (Denmark)

Ling, Richard; Horst, Heather

2011-01-01

Mobile communication has become a common phenomenon in most parts of the world. There are indeed more mobile subscriptions than there are people who use the internet. For many people outside of the metropolitan areas of Europe and North America, this is literally their first use of electronically...... and how it is challenging, and in many cases changing, notions of gender. While the mobile phone reshapes development and micro dynamics of gendered interactions, it is not necessarily a revolutionary tool. Existing power structures may be rearranged, but they are nonetheless quite stable. The analysis...... mediated interaction. This preface to the special issue of New Media & Society examines mobile communication in a global context. Through an overview of eight articles situated in the global south, we describe how mobile communication sheds light upon notions of information, appropriation and development...

Electron-electron scattering in linear transport in two-dimensional systems

DEFF Research Database (Denmark)

Hu, Ben Yu-Kuang; Flensberg, Karsten

1996-01-01

We describe a method for numerically incorporating electron-electron scattering in quantum wells for small deviations of the distribution function from equilibrium, within the framework of the Boltzmann equation. For a given temperature T and density n, a symmetric matrix needs to be evaluated only...... once, and henceforth it can be used to describe electron-electron scattering in any Boltzmann equation linear-response calculation for that particular T and n. Using this method, we calculate the distribution function and mobility for electrons in a quantum well, including full finite...

InAlN high electron mobility transistor Ti/Al/Ni/Au Ohmic contact optimisation assisted by in-situ high temperature transmission electron microscopy

International Nuclear Information System (INIS)

Smith, M. D.; Parbrook, P. J.; O'Mahony, D.; Conroy, M.; Schmidt, M.

2015-01-01

This paper correlates the micro-structural and electrical characteristics associated with annealing of metallic multi-layers typically used in the formation of Ohmic contacts to InAlN high electron mobility transistors. The multi-layers comprised Ti/Al/Ni/Au and were annealed via rapid thermal processing at temperatures up to 925 °C with electrical current-voltage analysis establishing the onset of Ohmic (linear IV) behaviour at 750–800 °C. In-situ temperature dependent transmission electron microscopy established that metallic diffusion and inter-mixing were initiated near a temperature of 500 °C. Around 800 °C, inter-diffusion of the metal and semiconductor (nitride) was observed, correlating with the onset of Ohmic electrical behaviour. The sheet resistance associated with the InAlN/AlN/GaN interface is highly sensitive to the anneal temperature, with the range depending on the Ti layer thickness. The relationship between contact resistivity and measurement temperature follow that predicted by thermionic field emission for contacts annealed below 850 °C, but deviated above this due to excessive metal-semiconductor inter-diffusion

Behaviour of Bichromatic Microwave Induced Magnetoresistance Oscillations in the High Mobility GaAs/AlGaAs 2D electron System

International Nuclear Information System (INIS)

Gunawardana, Binuka; Liu, Han-Chun; Samaraweera, Rasanga L.; Mani, R.G.; Reichl, C.; Wegscheider, W

2017-01-01

Microwave radiation-induced magneto-resistance oscillations are examined under bichromatic excitation for various frequency combinations in order to obtain a better understanding of the lineshape observed in the dual excitation experiment of the high mobility GaAs/AlGaAs 2D electron system. Here, we examine superposition- or lack thereof- in the lineshape observed in the bichromatic experiment, and report a trend observed between the monochromatic and bichromatic responses of the oscillatory diagonal resistance. (paper)

Demonstration of InAlN/AlGaN high electron mobility transistors with an enhanced breakdown voltage by pulsed metal organic chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Xue, JunShuai, E-mail: junshuaixue@hotmail.com; Zhang, JinCheng; Hao, Yue [Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China)

2016-01-04

In this work, InAlN/AlGaN heterostructures employing wider bandgap AlGaN instead of conventional GaN channel were grown on sapphire substrate by pulsed metal organic chemical vapor deposition, where the nominal Al composition in InAlN barrier and AlGaN channel were chosen to be 83% and 5%, respectively, to achieve close lattice-matched condition. An electron mobility of 511 cm{sup 2}/V s along with a sheet carrier density of 1.88 × 10{sup 13 }cm{sup −2} were revealed in the prepared heterostructures, both of which were lower compared with lattice-matched InAlN/GaN due to increased intrinsic alloy disorder scattering resulting from AlGaN channel and compressively piezoelectric polarization in barrier, respectively. While the high electron mobility transistor (HEMT) processed on these structures not only exhibited a sufficiently high drain output current density of 854 mA/mm but also demonstrated a significantly enhanced breakdown voltage of 87 V, which is twice higher than that of reported InAlN/GaN HEMT with the same device dimension, potential characteristics for high-voltage operation of GaN-based electronic devices.

Modeling Multi-Mobile Agents System Based on Coalition Signature Mechanism Using UML

Institute of Scientific and Technical Information of China (English)

SUNZhixin; HUANGHaiping; WANGRuchuan

2004-01-01

With the development of electronic commerce and agent techniques, multi-mobile agents cooperation can not only improve the efficiency of electronic business trade, but more importantly, it has a comprehensive applicative value in solving the security issues of mobile agent system. This paper firstly describes the mechanism of multi-mobile agents coalition signature aiming at the system security. Subsequently it brings forward a basic architecture of Multi-mobile agents system (MMAS) based on the design pattern of multi-mobile agents. The paper uses the diagrs_rn of UML, such as use case diagram, class diagram and sequence diagram to build the detailed model of the coalition signature and multi-mobile agents cooperation results. Through security analysis, we find that multimobile agents cooperation and interaction can solve some security problems of mobile agents in transfer, and also it can improve the efficiency of business trade. These results indicate that MMAS has a high security performance and can be widely used in E-commerce trade.

Remote interfacial dipole scattering and electron mobility degradation in Ge field-effect transistors with GeOx/Al2O3 gate dielectrics

International Nuclear Information System (INIS)

Wang, Xiaolei; Xiang, Jinjuan; Wang, Shengkai; Wang, Wenwu; Zhao, Chao; Ye, Tianchun; Xiong, Yuhua; Zhang, Jing

2016-01-01

Remote Coulomb scattering (RCS) on electron mobility degradation is investigated experimentally in Ge-based metal–oxide–semiconductor field-effect-transistors (MOSFETs) with GeO x /Al 2 O 3 gate stacks. It is found that the mobility increases with greater GeO x thickness (7.8–20.8 Å). The physical origin of this mobility dependence on GeO x thickness is explored. The following factors are excluded: Coulomb scattering due to interfacial traps at GeO x /Ge, phonon scattering, and surface roughness scattering. Therefore, the RCS from charges in gate stacks is studied. The charge distributions in GeO x /Al 2 O 3 gate stacks are evaluated experimentally. The bulk charges in Al 2 O 3 and GeO x are found to be negligible. The density of the interfacial charge is  +3.2  ×  10 12 cm −2 at the GeO x /Ge interface and  −2.3  ×  10 12 cm −2 at the Al 2 O 3 /GeO x interface. The electric dipole at the Al 2 O 3 /GeO x interface is found to be  +0.15 V, which corresponds to an areal charge density of 1.9  ×  10 13 cm −2 . The origin of this mobility dependence on GeO x thickness is attributed to the RCS due to the electric dipole at the Al 2 O 3 /GeO x interface. This remote dipole scattering is found to play a significant role in mobility degradation. The discovery of this new scattering mechanism indicates that the engineering of the Al 2 O 3 /GeO x interface is key for mobility enhancement and device performance improvement. These results are helpful for understanding and engineering Ge mobility enhancement. (paper)

Dose reconstruction using mobile phones

International Nuclear Information System (INIS)

Beerten, K.; Reekmans, F.; Schroeyers, W.; Lievens, L.; Vanhavere, F.

2011-01-01

Electronic components inside mobile phones are regarded as useful tools for accident and retrospective dosimetry using optically stimulated luminescence (OSL) and thermoluminescence. Components inside the devices with suitable properties for luminescence dosimetry include, amongst others, ceramic substrates in resistors, capacitors, transistors and antenna switches. Checking the performance of such devices in dosimetric experiments is a crucial step towards developing a reliable dosimetry system for emergency situations using personal belongings. Here, the results of dose assessment experiments using irradiated mobile phones are reported. It will be shown that simple regenerative dose estimates, derived from various types of components removed from different mobile phone models, are consistent with the given dose, after applying an average fading correction factor. (authors)

Retrospective dosimetry with alumina substrate from electronic components

International Nuclear Information System (INIS)

Ekendahl, D.; Judas, L.

2012-01-01

Alumina substrate can be found in electronic components used in portable electronic devices. The material is radiation sensitive and can be applied in dosimetry using thermally or optically stimulated luminescence. Electronic portable devices such as mobile phones, USB flash discs, mp3 players, etc., which are worn close to the body, can represent personal dosemeters for members of the general public in situations of large-scale radiation accidents or malevolent acts with radioactive materials. This study investigated dosimetric properties of alumina substrates and aspects of using mobile phones as personal dosemeters. The alumina substrates exhibited favourable dosimetry characteristics. However, anomalous fading had to be properly corrected in order to achieve sufficient precision in dose estimate. Trial dose reconstruction performed by means of two mobile phones proved that mobile phones can be used for reconstruction of personal doses. (authors)

29 CFR 4.162 - Fringe benefits under contracts exceeding $2,500.

Science.gov (United States)

2010-07-01

... 29 Labor 1 2010-07-01 2010-07-01 true Fringe benefits under contracts exceeding $2,500. 4.162... Compensation Standards § 4.162 Fringe benefits under contracts exceeding $2,500. (a) Pursuant to the statutory... contain a provision specifying the fringe benefits to be furnished the various classes of service...

Growth of high mobility GaN and AlGaN/GaN high electron mobility transistor structures on 4H-SiC by ammonia molecular-beam epitaxy

International Nuclear Information System (INIS)

Webb, James B.; Tang, H.; Bardwell, J. A.; Coleridge, P.

2001-01-01

Ammonia molecular-beam epitaxy has been used to grow high-quality epilayers of GaN and AlGaN/GaN heterostructure field-effect transistor (HFET) structures on insulating 4H-SiC. The growth process, which used a magnetron sputter epitaxy deposited buffer layer of AlN, has been described previously. Ex situ pretreatment of the SiC substrate was found to be unnecessary. For a single 2.0 μm thick silicon doped epilayer, a room temperature (RT) electron mobility of 500 cm2/Vs was measured at a carrier density of 6.6x10 16 cm -3 . For the HFET structure, a room temperature mobility of 1300 cm2/Vs at a sheet carrier density of 3.3x10 12 cm -2 was observed, increasing to 11000 cm2/Vs at 77 K. The surface morphology of the layers indicated a coalesced mesa structure similar to what we observed for growth on sapphire, but with a lower overall defect density and correspondingly larger grain size. The observation of well-resolved Shubnikov de Haas oscillations at fields as low as 3 T indicated a relatively smooth interface. [copyright] 2001 American Institute of Physics

Structure and electronic properties of InN and In-rich group III-nitride alloys

International Nuclear Information System (INIS)

Walukiewicz, W; III, J W Ager; Yu, K M; Liliental-Weber, Z; Wu, J; Li, S X; Jones, R E; Denlinger, J D

2006-01-01

The experimental study of InN and In-rich InGaN by a number of structural, optical and electrical methods is reviewed. Recent advances in thin film growth have produced single crystal epitaxial layers of InN which are similar in structural quality to GaN films made under similar conditions and which can have electron concentrations below 1 x 10 18 cm -3 and mobilities exceeding 2000 cm 2 (Vs) -1 . Optical absorption, photoluminescence, photo-modulated reflectance and soft x-ray spectroscopy measurements were used to establish that the room temperature band gap of InN is 0.67 ± 0.05 eV. Experimental measurements of the electron effective mass in InN are presented and interpreted in terms of a non-parabolic conduction band caused by the k · p interaction across the narrow gap. Energetic particle irradiation is shown to be an effective method to control the electron concentration, n, in undoped InN. Optical studies of irradiated InN reveal a large Burstein-Moss shift of the absorption edge with increasing n. Fundamental studies of the energy levels of defects in InN and of electron transport are also reviewed. Finally, the current experimental evidence for p-type activity in Mg-doped InN is evaluated. (topical review)

Electron-beam-induced conduction in polyethylene terephthalate films

Energy Technology Data Exchange (ETDEWEB)

Beckley, L M; Lewis, T J; Taylor, D M [University Coll. of North Wales, Bangor (UK). School of Electronic Engineering Science

1976-06-21

Measurements are reported of electron-beam-induced conduction in thin polyethylene terephthalate (PET) films for electron energies up to 10 keV. The ratio of induced dielectric current to incident beam current (the gain) is orders of magnitude less than unity over practically the whole range of beam penetration. This result is quite unlike that normally found for inorganic dielectrics where the gain will exceed unity and reach a maximum at or near full penetration. In spite of the very different gain characteristics it is shown that the model recently proposed by Nunes de Oliviera and Gross (J. App. Phys.; 46:3132 (1975)), and by Aris et al (IEE Conf. Publ. No.129.; 267 (1975) and J. Phys. C. Solid State Phys.; 9:797 (1976)) and applied to mica and tantalum oxide respectively is also applicable to PET. Use is made of the known carrier mobility and lifetime data for this polymer and it is shown that very large space-charge distortions of the field can be produced by the beam which may well account for the frequent sample failure experienced during the experiments. The work supports suggestions by earlier workers that the current in unirradiated PET is electrode limited and predicts the maximum (space-charge limited) current likely to occur in this polymer.

Diverse carrier mobility of monolayer BNCx: A combined density functional theory and Boltzmann transport theory study.

Science.gov (United States)

Wu, Tao; Deng, Kaiming; Deng, Wei-Qiao; Lu, Ruifeng

2017-09-19

BNCX monolayer as a kind of two-dimensional material has numerous chemical atomic ratios and arrangements with different electronic structures. Via calculations on the basis of density functional theory and Boltzmann transport theory under deformation potential approximation, the band structures and carrier mobilities of BNCX (x=1,2,3,4) nanosheets are systematically investigated. The calculated results show that BNC2-1 is a material with very small band gap (0.02 eV) among all the structures while other BNCX monolayers are semiconductors with band gap ranging from 0.51 to 1.32 eV. The carrier mobility of BNCX varies considerably from tens to millions of cm2 V-1 s-1. For BNC2-1, the hole mobility and electron mobility along both x and y directions can reach 105 orders of magnitude, which is similar to the carrier mobility of graphene. Besides, all studied BNCX monolayers obviously have anisotropic hole mobility and electron mobility. In particular, for semiconductor BNC4, its hole mobility along y direction and electron mobility along x direction unexpectedly reach 106 orders of magnitude, even higher than that of graphene. Our findings suggest that BNCX layered materials with proper ratio and arrangement of carbon atoms will possess desirable charge transport properties, exhibiting potential applications in nanoelectronic devices. © 2017 IOP Publishing Ltd.

Development and Validation of Mobile Learning Acceptance Measure

Science.gov (United States)

Sharma, Sujeet Kumar; Sarrab, Mohamed; Al-Shihi, Hafedh

2017-01-01

The growth of Smartphone usage, increased acceptance of electronic learning (E-learning), the availability of high reliability mobile networks and need for flexibility in learning have resulted in the growth of mobile learning (M-learning). This has led to a tremendous interest in the acceptance behaviors related to M-learning users among the…

Temperature dependent microwave performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon substrate

International Nuclear Information System (INIS)

Arulkumaran, S.; Liu, Z.H.; Ng, G.I.; Cheong, W.C.; Zeng, R.; Bu, J.; Wang, H.; Radhakrishnan, K.; Tan, C.L.

2007-01-01

The influence of temperature (- 50 deg. C to + 200 deg. C) was studied on the DC and microwave characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) on high resistivity Si substrate for the first time. The AlGaN/GaN HEMTs exhibited a current-gain cut-off frequency (f T ) of 11.8 GHz and maximum frequency of oscillation (f max ) of 27.5 GHz. When compared to room temperature values, about 4% and 10% increase in f T and f max and 23% and 39.5% decrease in f T and f max were observed when measured at - 50 deg. C and 200 deg. C, respectively. The improvement of I D , g m f T , and f max at - 50 deg. C is due to the enhancement of 2DEG mobility and effective electron velocity. The anomalous drain current reduction in the I-V curves were observed at low voltage region at the temperature ≤ 10 deg. C but disappeared when the temperature reached ≥ 25 deg. C. A positive threshold voltage (V th ) shift was observed from - 50 deg. C to 200 deg. C. The positive shift of V th is due to the occurrence of trapping effects in the devices. The drain leakage current decreases with activation energies of 0.028 eV and 0.068 eV. This decrease of leakage current with the increase of temperature is due to the shallow acceptor initiated impact ionization

Growth optimization and characterization of high mobility two-dimensional electron systems in AlAs quantum wells

Energy Technology Data Exchange (ETDEWEB)

Dasgupta, Shivaji

2009-02-15

In this work two-dimensional electron systems (2DESs) based on AlAs/AlGaAs heterostructures doped with Si are investigated. The electrons are confined in AlAs quantum wells (QWs) sandwiched between AlGaAs buffers. Analytical calculations and simulations for AlAs QWs are presented in the first chapter. The results show a cross-over width, above which the wide (001)-oriented QWs show double valley occupancy and wide (110)-oriented QWs show single valley occupancy. We solve the Schroedinger equation analytically for anisotropic masses. The solution shows the orientation dependence of the elliptical cyclotron orbit due to the anisotropic mass. We also present an introduction to the Landau level crossings based on g{sup *}m{sup *} product. In the next chapter, we present experimental results for the double-valley (001)-oriented AlAs QWs. We present the different structures of the deep AlAs QWs along with the low temperature magnetotransport data for these QWs. Thereafter, we present the results on shallow AlAs QWs. We achieved a mobility of 4.2 x 10{sup 5} cm{sup 2}/Vs at 330 mK for the deep backside doped AlAs QW. For the shallow QWs, we achieved a mobility of2.3 x 10{sup 5} cm{sup 2}/Vs at 330 mK, for a density of 2.9 x 10{sup 11} cm{sup -2}. From the magneto-transport data, we see evidence of the double-valley occupation for the (001)-oriented AlAs wide QWs. In the next chapter, we present experimental results for the single-valley (110)-oriented AlAs QWs. We deduced the donor binding energy and the doping efficiency for this facet from a doping series of double-sided doped QWs. Thereafter, we designed different structures for the (110)-oriented AlAs QWs, which we present along with their respective low temperature magneto-transport data. We measured one of the double-sided doped AlAs QWs at very high magnetic fields and low temperatures, down to 60 mK. At the end of the chapter, we present a spike feature observed in the magneto-transport data of these QWs. This

Electron scattering by native defects in III-V nitrides and their alloys

International Nuclear Information System (INIS)

Hsu, L.; Walukiewicz, W.

1996-03-01

We have calculated the electron mobilities in GaN and InN taking into consideration scattering by short range potentials, in addition to all standard scattering mechanisms. These potentials are produced by the native defects which are responsible for the high electron concentrations in nominally undoped nitrides. Comparison of the calculated mobilities with experimental data shows that scattering by short range potentials is the dominant mechanism limiting the electron mobilities in unintentionally doped nitrides with large electron concentrations. In the case of Al x Ga 1-x N alloys, the reduction in the electron concentration due to the upward shift of the conduction band relative to the native defect level can account for the experimentally measured mobilities. Resonant scattering is shown to be important when the defect and Fermi levels are close in energy

Enabling Routes as Context in Mobile Services

DEFF Research Database (Denmark)

Brilingaite, Agne; Jensen, Christian Søndergaard; Zokaite, Nora

2004-01-01

With the continuing advances in wireless communications, geo-positioning, and portable electronics, an infrastructure is emerging that enables the delivery of on-line, location-enabled services to very large numbers of mobile users. A typical usage situation for mobile services is one characterized...... by a small screen and no keyboard, and by the service being only a secondary focus of the user. It is therefore particularly important to deliver the "right" information and service at the right time, with as little user interaction as possible. This may be achieved by making services context aware.Mobile...

Quasi-one-dimensional electron transport over the surface of a liquid-helium film

International Nuclear Information System (INIS)

Sokolov, Sviatoslav; Studart, Nelson

2003-01-01

Quasi-one-dimensional mobility of surface electrons over a liquid-helium suspended film is studied for a conducting channel. The electron mobility is calculated taking into account the electron scattering by helium atoms in the vapor phase, ripplons, and surface defects of the film substrate both in one-electron regime and in the so-called complete-control limit where the influence of inter-electron collisions on the electron distribution function is taken into account. It is shown that the mobility for low temperatures is dominated by the surface-defect scattering and its temperature dependence is essentially different from that of the electron-ripplon scattering

Sensitivity of GRETINA position resolution to hole mobility

Energy Technology Data Exchange (ETDEWEB)

Prasher, V.S. [Department of Physics, University of Massachusetts Lowell, Lowell, MA 01854 (United States); Cromaz, M. [Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Merchan, E.; Chowdhury, P. [Department of Physics, University of Massachusetts Lowell, Lowell, MA 01854 (United States); Crawford, H.L. [Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Lister, C.J. [Department of Physics, University of Massachusetts Lowell, Lowell, MA 01854 (United States); Campbell, C.M.; Lee, I.Y.; Macchiavelli, A.O. [Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Radford, D.C. [Physics Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Wiens, A. [Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)

2017-02-21

The sensitivity of the position resolution of the gamma-ray tracking array GRETINA to the hole charge-carrier mobility parameter is investigated. The χ{sup 2} results from a fit of averaged signal (“superpulse”) data exhibit a shallow minimum for hole mobilities 15% lower than the currently adopted values. Calibration data on position resolution is analyzed, together with simulations that isolate the hole mobility dependence of signal decomposition from other effects such as electronics cross-talk. The results effectively exclude hole mobility as a dominant parameter for improving the position resolution for reconstruction of gamma-ray interaction points in GRETINA.

Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

International Nuclear Information System (INIS)

Gao, Tao; Xu, Ruimin; Kong, Yuechan; Zhou, Jianjun; Kong, Cen; Dong, Xun; Chen, Tangsheng

2015-01-01

We demonstrate highly improved linearity in a nonlinear ferroelectric of Pb(Zr 0.52 Ti 0.48 )-gated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). Distinct double-hump feature in the transconductance-gate voltage (g m -V g ) curve is observed, yielding remarkable enhancement in gate voltage swing as compared to MIS-HEMT with conventional linear gate dielectric. By incorporating the ferroelectric polarization into a self-consistent calculation, it is disclosed that in addition to the common hump corresponding to the onset of electron accumulation, the second hump at high current level is originated from the nonlinear polar nature of ferroelectric, which enhances the gate capacitance by increasing equivalent dielectric constant nonlinearly. This work paves a way for design of high linearity GaN MIS-HEMT by exploiting the nonlinear properties of dielectric

Radiation safety assessment of mobile telephone base stations

International Nuclear Information System (INIS)

Mohd Yusof Mohd Ali; Mohd Anuar Majid; Mohd Amirul Nizam

2002-01-01

Mobile telephone is fast getting popular among users and in fact it has become one of the fastest selling electronic products in the world. More base stations are expected to be built to meet such high demands and this has caused great concerned among members of the public, especially those living close to the stations, about the potential harmful health effects of radiofrequency (RF) radiation produced by such facilities. A project was initiated by MINT in early 2000 with aims to assess the radiation levels present in the areas around the base stations and to establish baseline data on the pattern and trend of the radiation emission from each different set up of the facilities. This paper highlights some basics facts about mobile telephones and preliminary findings of the project. The assessment has been carried out at 16 base station sites and the results indicate that the radiation levels present around these sites are very low. Their broadband readings vary between below the detection limit of 0.3μWatts/cm 2 to 11 μWatts/cm 2 and they are comparable to normal background radiation present in places away from any base stations. The highest level observed was 1.5% of the exposure limit recommended for members of the public. However, locations at close distance in front of the the antenna can be very serious in term of radiation exposure since the radiation level here can easily exceed the permissible exposure limit for public. Safety precaution needs to be taken when entering these areas and they should be out of bound for members of the public. (Author)

Theory of vibratory mobilization and break-up of non-wetting fluids entrapped in pore constrictions

Science.gov (United States)

Beresnev, I.; Li, W.; Vigil, D.

2006-12-01

Quantitative dynamics of a non-wetting (e. g., NAPL) ganglion entrapped in a pore constriction and subjected to vibrations can be approximated by the equation of motion of an oscillator moving under the effect of the external pressure gradient, inertial oscillatory force, and restoring capillary force. The solution of the equation provides the conditions under which the droplet experiences forced oscillations without being mobilized or is liberated upon the acceleration of the wall exceeding an "unplugging" threshold. This solution provides a quantitative tool for the estimation of the parameters of vibratory fields needed to liberate entrapped non-wetting fluids. For typical pore sizes encountered in reservoirs and aquifers, wall accelerations must exceed at least several m/sec2 and even higher levels to mobilize the droplets of NAPL; however, in the populations of ganglia entrapped in natural porous environments, many may reside very near their mobilization thresholds and may be mobilized by extremely low accelerations as well. For given acceleration, lower seismic frequencies are more efficient. The ganglia may also break up into smaller pieces when passing through pore constrictions. The snap-off is governed by the geometry only; for constrictions with sinusoidal profile (spatial wavelength of L and maximum and minimum radii of rmax and rmin, the break-up occurs if L > 2π(rmin rmax)1/2. Computational fluid dynamics shows the details of the break-up process.

Health and Safety in Mobile Telephony

International Nuclear Information System (INIS)

Lipnjak, G.

2001-01-01

Full text: The paper deals with a description of mobile telephone network and the emitted radiation. The main focus is related to the potential health risks of mobile telephone radio waves. The international press has published articles warning of the risk of brain damage, hypersensitivity, eye damage, etc., if people use mobile telephones. The most important guidelines in the field of bioelectromagnetic and related to mobile telephony (ICNIRP, CENELEC and IEEE) are commented. Also, the problem of EMI of mobile telephone with other used electronic equipment by an impaired part of the human population has been elaborated. A lot of telecommunication companies provide expertise in a number of national and international standardisation groups, whose task is to monitor what is going on in the area of Health and Safety and to develop standardised measurement methods and equipment for radio-frequency electromagnetic exposure and interference. (author)

The Rise of Mobile Technology on the Financial Sector in Zimbabwe

OpenAIRE

Paul Mupfiga; Tafadzwa Padare

2017-01-01

The emergence of technology has revolted the way that the financial industry operates and the increasing use of mobile gadgets has changed the banking system from the traditional brick and mortar building to a virtual system. The sudden rise in use and innovation of smart mobile phones, mobile personal computers, tablets and various other mobile electronic gadgets has resulted in the rise of mobile financial products. Rapid quickening innovative headways are making completely new business sug...

High-mobility BaSnO{sub 3} grown by oxide molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Raghavan, Santosh; Schumann, Timo; Kim, Honggyu; Zhang, Jack Y.; Cain, Tyler A.; Stemmer, Susanne, E-mail: stemmer@mrl.ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

2016-01-01

High-mobility perovskite BaSnO{sub 3} films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO{sub 3} films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnO{sub x}. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO{sub 3}. We demonstrate room temperature electron mobilities of 150 cm{sup 2} V{sup −1} s{sup −1} in films grown on PrScO{sub 3}. The results open up a wide range of opportunities for future electronic devices.

Origin of fine oscillations in the photoluminescence spectrum of 2-dimensional electron gas formed in AlGaN/GaN high electron mobility transistor structures

Energy Technology Data Exchange (ETDEWEB)

Jana, Dipankar, E-mail: dip2602@gmail.com; Porwal, S.; Oak, S. M.; Sharma, T. K., E-mail: tarun@rrcat.gov.in [Semiconductor Physics and Devices Laboratory, Raja Ramanna Centre for Advanced Technology, Indore 452013, Madhya Pradesh (India); Jain, Anubha [Solid State Physics Laboratory, Lucknow Road, New Delhi 110054 (India)

2015-10-28

An unambiguous identification of the fine oscillations observed in the low temperature photoluminescence (PL) spectra of AlGaN/GaN based high electron mobility transistor (HEMT) structures is carried out. In literature, such oscillations have been erroneously identified as the sub-levels of 2-dimensional electron gas (2DEG) formed at AlGaN/GaN heterointerface. Here, the origin of these oscillations is probed by performing the angle dependent PL and reflectivity measurements under identical conditions. Contrary to the reports available in literature, we find that the fine oscillations are not related to 2DEG sub-levels. The optical characteristics of these oscillations are mainly governed by an interference phenomenon. In particular, peculiar temperature dependent redshift and excitation intensity dependent blueshift, which have been interpreted as the characteristics of 2DEG sub-levels in HEMT structures by other researchers, are understood by invoking the wavelength and temperature dependence of the refractive index of GaN within the framework of interference phenomenon. The results of other researchers are also consistently explained by considering the fine oscillatory features as the interference oscillations.

Auditory Brainstem Responses and EMFs Generated by Mobile Phones.

Science.gov (United States)

Khullar, Shilpa; Sood, Archana; Sood, Sanjay

2013-12-01

There has been a manifold increase in the number of mobile phone users throughout the world with the current number of users exceeding 2 billion. However this advancement in technology like many others is accompanied by a progressive increase in the frequency and intensity of electromagnetic waves without consideration of the health consequences. The aim of our study was to advance our understanding of the potential adverse effects of GSM mobile phones on auditory brainstem responses (ABRs). 60 subjects were selected for the study and divided into three groups of 20 each based on their usage of mobile phones. Their ABRs were recorded and analysed for latency of waves I-V as well as interpeak latencies I-III, I-V and III-V (in ms). Results revealed no significant difference in the ABR parameters between group A (control group) and group B (subjects using mobile phones for maximum 30 min/day for 5 years). However the latency of waves was significantly prolonged in group C (subjects using mobile phones for 10 years for a maximum of 30 min/day) as compared to the control group. Based on our findings we concluded that long term exposure to mobile phones may affect conduction in the peripheral portion of the auditory pathway. However more research needs to be done to study the long term effects of mobile phones particularly of newer technologies like smart phones and 3G.

Influence of electron transport on the efficiency of polymer-based solar cells

Energy Technology Data Exchange (ETDEWEB)

Kuxhaus, Viktor; Jaiser, Frank; Neher, Dieter [Institute of Physics and Astronomy, University Potsdam (Germany); Voges, Frank [Merck KGaA, Darmstadt (Germany)

2010-07-01

Recently, we showed that the mobility of electrons in polymer-based solar cells has a large influence on the overall performance of such devices. Here, we investigate the correlation between electron mobility and charge generation efficiency in organic bilayer solar cells for a series of electron transporting materials (ETMs) with comparable HOMO and LUMO levels. The electron mobility was measured by transient electroluminescence. Here, a thin M3EH-PPV was used as a sensing layer. The interface between M3EH-PPV and ETM acted as a recombination zone of electrons transported through the ETM layer and holes that are blocked at the interface. Therefore, the electron mobility can easily be determined from the onset of M3EH-PPV emission which is spectrally well separated from the ETM emission. To determine the charge generation efficiency, the different ETMs were combined in bilayer solar cell with PFB as donator.

Stem Cell Mobilization with G-CSF versus Cyclophosphamide plus G-CSF in Mexican Children

OpenAIRE

Meraz, Jos? Eugenio V?zquez; Arellano-Galindo, Jos?; Avalos, Armando Mart?nez; Mendoza-Garc?a, Emma; Jim?nez-Hern?ndez, Elva

2016-01-01

Fifty-six aphaereses were performed in 23 pediatric patients with malignant hematological and solid tumors, following three different protocols for PBPC mobilization and distributed as follows: A: seventeen mobilized with 4?g/m2 of cyclophosphamide (CFA) and 10??g/kg/day of granulocyte colony stimulating factor (G-CSF), B: nineteen with CFA + G-CSF, and C: twenty only with G-CSF when the WBC count exceeded 10 ? 109/L. The average number of MNC/kg body weight (BW)/aphaeresis was 0.4 ? 108 (0.1...

Electronic Reading and Digital Library Technologies: Understanding Learner Expectation and Usage Intent for Mobile Learning

Science.gov (United States)

Hyman, Jack A.; Moser, Mary T.; Segala, Laura N.

2014-01-01

Mobile information technology is changing the education landscape by offering learners the opportunity to engage in asynchronous, ubiquitous instruction. While there is a proliferation of mobile content management systems being developed for the mobile Web and stand-alone mobile applications, few studies have addressed learner expectations and…

Mobile phone based clinical microscopy for global health applications.

Directory of Open Access Journals (Sweden)

David N Breslauer

Full Text Available Light microscopy provides a simple, cost-effective, and vital method for the diagnosis and screening of hematologic and infectious diseases. In many regions of the world, however, the required equipment is either unavailable or insufficiently portable, and operators may not possess adequate training to make full use of the images obtained. Counterintuitively, these same regions are often well served by mobile phone networks, suggesting the possibility of leveraging portable, camera-enabled mobile phones for diagnostic imaging and telemedicine. Toward this end we have built a mobile phone-mounted light microscope and demonstrated its potential for clinical use by imaging P. falciparum-infected and sickle red blood cells in brightfield and M. tuberculosis-infected sputum samples in fluorescence with LED excitation. In all cases resolution exceeded that necessary to detect blood cell and microorganism morphology, and with the tuberculosis samples we took further advantage of the digitized images to demonstrate automated bacillus counting via image analysis software. We expect such a telemedicine system for global healthcare via mobile phone -- offering inexpensive brightfield and fluorescence microscopy integrated with automated image analysis -- to provide an important tool for disease diagnosis and screening, particularly in the developing world and rural areas where laboratory facilities are scarce but mobile phone infrastructure is extensive.

ATLAS: Exceeding all expectations

CERN Multimedia

CERN Bulletin

2010-01-01

“One year ago it would have been impossible for us to guess that the machine and the experiments could achieve so much so quickly”, says Fabiola Gianotti, ATLAS spokesperson. The whole chain – from collision to data analysis – has worked remarkably well in ATLAS.   The first LHC proton run undoubtedly exceeded expectations for the ATLAS experiment. “ATLAS has worked very well since the beginning. Its overall data-taking efficiency is greater than 90%”, says Fabiola Gianotti. “The quality and maturity of the reconstruction and simulation software turned out to be better than we expected for this initial stage of the experiment. The Grid is a great success, and right from the beginning it has allowed members of the collaboration all over the world to participate in the data analysis in an effective and timely manner, and to deliver physics results very quickly”. In just a few months of data taking, ATLAS has observed t...

Mobile communication in the global south

DEFF Research Database (Denmark)

Ling, Richard; Horst, Heather

2011-01-01

and how it is challenging, and in many cases changing, notions of gender. While the mobile phone reshapes development and micro dynamics of gendered interactions, it is not necessarily a revolutionary tool. Existing power structures may be rearranged, but they are nonetheless quite stable. The analysis...... of mobile communication in the global south helps us to understand the rise of innovative practices around information and communication technologies and, in turn, enables us to develop theory to understand these emergent empirical realities.......Mobile communication has become a common phenomenon in most parts of the world. There are indeed more mobile subscriptions than there are people who use the internet. For many people outside of the metropolitan areas of Europe and North America, this is literally their first use of electronically...

A scoping review on smart mobile devices and physical strain.

Science.gov (United States)

Tegtmeier, Patricia

2018-01-01

Smart mobile devices gain increasing importance at work. Integrating these smart mobile devices into the workplace creates new opportunities and challenges for occupational health and safety. Therefore the aim of the following scoping review was to identify ergonomic challenges with the use of smart mobile devices at work with respect to physical problems. A review of 36 papers based on literature including January 2016 was conducted. Biomechanical measures in the reviewed studies demonstrated i.e., head flexion angles exceeding 20° in 20 out of 26 different conditions described. Furthermore, laterally deviated wrists were frequently noted and thumb and finger flexor muscle activities generally greater than 5% MVC were reported. The reviewed literature indicated an elevated biomechanical risk, especially for the neck, the wrists and thumb. This was due to poor posture, ongoing and intermitted muscle tension, and/or repetitive movements. Papers addressing specific risks for smartphone and tablet use in different work environments are scarce. As the technology, as well as the use of smart mobile devices is rapidly changing, further research, especially for prolonged periods in the workplace is needed.

Integrity protection for code-on-demand mobile agents in e-commerce

OpenAIRE

Wang, TH; Guan, SU; Chan, TK

2002-01-01

The mobile agent paradigm has been proposed as a promising solution to facilitate distributed computing over open and heterogeneous networks. Mobility, autonomy, and intelligence are identified as key features of mobile agent systems and enabling characteristics for the next-generation smart electronic commerce on the Internet. However, security-related issues, especially integrity protection in mobile agent technology, still hinder the widespread use of software agents: from the agent’s pers...

Indium antimonide quantum well structures for electronic device applications

Science.gov (United States)

Edirisooriya, Madhavie

The electron effective mass is smaller in InSb than in any other III-V semiconductor. Since the electron mobility depends inversely on the effective mass, InSb-based devices are attractive for field effect transistors, magnetic field sensors, ballistic transport devices, and other applications where the performance depends on a high mobility or a long mean free path. In addition, electrons in InSb have a large g-factor and strong spin orbit coupling, which makes them well suited for certain spin transport devices. The first n-channel InSb high electron mobility transistor (HEMT) was produced in 2005 with a power-delay product superior to HEMTs with a channel made from any other III-V semiconductor. The high electron mobility in the InSb quantum-well channel increases the switching speed and lowers the required supply voltage. This dissertation focuses on several materials challenges that can further increase the appeal of InSb quantum wells for transistors and other electronic device applications. First, the electron mobility in InSb quantum wells, which is the highest for any semiconductor quantum well, can be further increased by reducing scattering by crystal defects. InSb-based heteroepitaxy is usually performed on semi-insulating GaAs (001) substrates due to the lack of a lattice matched semi-insulating substrate. The 14.6% mismatch between the lattice parameters of GaAs and InSb results in the formation of structural defects such as threading dislocations and microtwins which degrade the electrical and optical properties of InSb-based devices. Chapter 1 reviews the methods and procedures for growing InSb-based heterostructures by molecular beam epitaxy. Chapters 2 and 3 introduce techniques for minimizing the crystalline defects in InSb-based structures grown on GaAs substrates. Chapter 2 discusses a method of reducing threading dislocations by incorporating AlyIn1-ySb interlayers in an AlxIn1-xSb buffer layer and the reduction of microtwin defects by growth

A review of electronic medical record keeping on mobile medical service trips in austere settings.

Science.gov (United States)

Dainton, Christopher; Chu, Charlene H

2017-02-01

Electronic medical records (EMRs) may address the need for decision and language support for Western clinicians on mobile medical service trips (MSTs) in low resource settings abroad, while providing improved access to records and data management. However, there has yet to be a review of this emerging technology used by MSTs in low-resource settings. The aim of this study is to describe EMR systems designed specifically for use by mobile MSTs in remote settings, and accordingly, determine new opportunities for this technology to improve quality of healthcare provided by MSTs. A MEDLINE, EMBASE, and Scopus/IEEE search and supplementary Google search were performed for EMR systems specific to mobile MSTs. Information was extracted regarding EMR name, organization, scope of use, platform, open source coding, commercial availability, data integration, and capacity for linguistic and decision support. Missing information was requested by email. After screening of 122 abstracts, two articles remained that discussed deployment of EMR systems in MST settings (iChart, SmartList To Go), and thirteen additional EMR systems were found through the Google search. Of these, three systems (Project Buendia, TEBOW, and University of Central Florida's internally developed EMR) are based on modified versions of Open MRS software, while three are smartphone apps (QuickChart EMR, iChart, NotesFirst). Most of the systems use a local network to manage data, while the remaining systems use opportunistic cloud synchronization. Three (TimmyCare, Basil, and Backpack EMR) contain multilingual user interfaces, and only one (QuickChart EMR) contained MST-specific clinical decision support. There have been limited attempts to tailor EMRs to mobile MSTs. Only Open MRS has a broad user base, and other EMR systems should consider interoperability and data sharing with larger systems as a priority. Several systems include tablet compatibility, or are specifically designed for smartphone, which may be

Investigating Word of Mouth as Advertising Tool for Mobile devices in South Africa

OpenAIRE

Louise van Scheers; Carly Prinsloo

2014-01-01

Samsung Electronics entered the mobile device market on the back of their successes in other markets for electronic devices. The mobile device space in South Africa was dominated by Nokia and Blackberry and in a short space of time Samsung stormed into a tie for the top spot alongside Blackberry with a market share of 23%. In 2013 Samsung’s market share dropped 5%, moving down to 18%, placing them second to Blackberry as they entered 2014. Samsung’s IMC strategy for their mobile devices has b...

Electron beam welding

International Nuclear Information System (INIS)

Schwartz, M.M.

1974-01-01

Electron-beam equipment is considered along with fixed and mobile electron-beam guns, questions of weld environment, medium and nonvacuum welding, weld-joint designs, tooling, the economics of electron-beam job shops, aspects of safety, quality assurance, and repair. The application of the process in the case of individual materials is discussed, giving attention to aluminum, beryllium, copper, niobium, magnesium, molybdenum, tantalum, titanium, metal alloys, superalloys, and various types of steel. Mechanical-property test results are examined along with the areas of application of electron-beam welding

47 CFR 64.3100 - Restrictions on mobile service commercial messages.

Science.gov (United States)

2010-10-01

... subscriber; (2) Include a functioning return electronic mail address or other Internet-based mechanism that... of mobile service commercial messages and/or commercial electronic mail messages, and that does not... electronic mail messages with a functioning option and clear and conspicuous instructions to reject further...