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Sample records for electron irradiated sapphire

  1. Surface study of irradiated sapphires from Phrae Province, Thailand using AFM

    Science.gov (United States)

    Monarumit, N.; Jivanantaka, P.; Mogmued, J.; Lhuaamporn, T.; Satitkune, S.

    2017-09-01

    The irradiation is one of the gemstone enhancements for improving the gem quality. Typically, there are many varieties of irradiated gemstones in the gem market such as diamond, topaz, and sapphire. However, it is hard to identify the gemstones before and after irradiation. The aim of this study is to analyze the surface morphology for classifying the pristine and irradiated sapphires using atomic force microscope (AFM). In this study, the sapphire samples were collected from Phrae Province, Thailand. The samples were irradiated by high energy electron beam for a dose of ionizing radiation at 40,000 kGy. As the results, the surface morphology of pristine sapphires shows regular atomic arrangement, whereas, the surface morphology of irradiated sapphires shows the nano-channel observed by the 2D and 3D AFM images. The atomic step height and root mean square roughness have changed after irradiation due to the micro-structural defect on the sapphire surface. Therefore, this study is a frontier application for sapphire identification before and after irradiation.

  2. Sapphire capillary interstitial irradiators for laser medicine

    Science.gov (United States)

    Shikunova, I. A.; Dolganova, I. N.; Dubyanskaya, E. N.; Mukhina, E. E.; Zaytsev, K. I.; Kurlov, V. N.

    2018-04-01

    In this paper, we demonstrate instruments for laser radiation delivery based on sapphire capillary needles. Such sapphire irradiators (introducers) can be used for various medical applications, such as photodynamic therapy, laser hyperthermia, laser interstitial thermal therapy, and ablation of tumors of various organs. Unique properties of sapphire allow for effective redistribution of the heat, generated in biological tissues during their exposure to laser radiation. This leads to homogeneous distribution of the laser irradiation around the needle, and lower possibility of formation of the overheating focuses, as well as the following non-transparent thrombi.

  3. Gold wetting effects on sapphire irradiated with GeV uranium ions

    International Nuclear Information System (INIS)

    Ramos, S.M.M.

    1997-01-01

    Single crystals of α-Al 2 O 3 were irradiated with 238 U ions using two different energies: 3.4 MeV/u and 1.7 MeV/u. The irradiations were performed at a temperature of ∼80 K, with fluences ranging from 1.2 x 10 12 to 2.5 x 10 12 ions cm -2 . After irradiation, thin gold films were deposited on the sapphire surfaces by using a sputtering method. Subsequent annealing in air at a temperature of 723 and 923 K were applied to investigate the influence of the pre-damage on the adhesion of the gold layer on the sapphire surface. Rutherford backscattering analysis and scanning electron microscopy performed in both virgin and irradiated areas, show that the pre-irradiation damage inhibits the gold film of breaking up into islands after annealing. A wetting effect, which could depend on the damage morphology, is clearly observed. (orig.)

  4. Radiation defects in InN irradiated with high-energy electrons

    International Nuclear Information System (INIS)

    Zhivul'ko, V.D.; Mudryj, A.V.; Yakushev, M.V.; Martin, R.; Shaff, V.; Lu, Kh.; Gurskij, A.L.

    2013-01-01

    The influence of high energy (6 MeV, fluencies 10 15 – 10 18 cm -2 ) electron irradiation on the fundamental absorption and luminescence properties of InN thin films which were grown on sapphire substrates by molecular bean epitaxial has been studied. It is found that electron irradiation increases the electron concentration and band gap energy E g of InN. The shift of the band gap energy E g is a manifestation of the Burshtein-Mossa effect. (authors)

  5. Neutron irradiation of sapphire for compressive strengthening. II. Physical properties changes

    Energy Technology Data Exchange (ETDEWEB)

    Regan, Thomas M. E-mail: thomas_regan@uml.edu; Harris, Daniel C. E-mail: harrisdc@navair.navy.mil; Blodgett, David W.; Baldwin, Kevin C.; Miragliotta, Joseph A.; Thomas, Michael E.; Linevsky, Milton J.; Giles, John W.; Kennedy, Thomas A.; Fatemi, Mohammad; Black, David R.; Lagerloef, K. Peter D

    2002-01-01

    Irradiation of sapphire with fast neutrons (0.8-10 MeV) at a fluence of 10{sup 22}/m{sup 2} increased the c-axis compressive strength and the c-plane biaxial flexure strength at 600 deg. C by a factor of {approx}2.5. Both effects are attributed to inhibition of r-plane twin propagation by damage clusters resulting from neutron impact. The a-plane biaxial flexure strength and four-point flexure strength in the c- and m-directions decreased by 10-23% at 600 deg. C after neutron irradiation. Neutron irradiation had little or no effect on thermal conductivity, infrared absorption, elastic constants, hardness, and fracture toughness. A featureless electron paramagnetic resonance signal at g=2.02 was correlated with the strength increase: This signal grew in amplitude with increasing neutron irradiation, which also increased the compressive strength. Annealing conditions that reversed the strengthening also annihilated the g=2.02 signal. A signal associated with a paramagnetic center containing two Al nuclei was not correlated with strength. Ultraviolet and visible color centers also were not correlated with strength in that they could be removed by annealing at temperatures that were too low to reverse the compressive strengthening effect of neutron irradiation.

  6. Electronic structure analysis of GaN films grown on r- and a-plane sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, Monu; Krishna TC, Shibin; Aggarwal, Neha [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Vihari, Saket [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Gupta, Govind, E-mail: govind@nplindia.org [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India)

    2015-10-05

    Graphical abstract: Substrate orientation induced changes in surface chemistry, band bending, hybridization states, electronic properties and surface morphology of epitaxially grown GaN were investigated via photoemission spectroscopic and Atomic Force Microscopic measurements. - Highlights: • Electronic structure and surface properties of GaN film grown on r/a-plane sapphire. • Downward band bending (0.5 eV) and high surface oxide is observed for GaN/a-sapphire. • Electron affinity and ionization energy is found to be higher for GaN/a-sapphire. - Abstract: The electronic structure and surface properties of epitaxial GaN films grown on r- and a-plane sapphire substrates were probed via spectroscopic and microscopic measurements. X-ray photoemission spectroscopic (XPS) measurements were performed to analyse the surface chemistry, band bending and valence band hybridization states. It was observed that GaN/a-sapphire display a downward band bending of 0.5 eV and possess higher amount of surface oxide compared to GaN/r-sapphire. The valence band (VB) investigation revealed that the hybridization corresponds to the interactions of Ga 4s and Ga 4p orbitals with N 2p orbital, and result in N2p–Ga4p, N2p–Ga4s{sup ∗}, mixed and N2p–Ga4s states. The energy band structure and electronic properties were measured via ultraviolet photoemission spectroscopic (UPS) experiments. The band structure analysis and electronic properties calculations divulged that the electron affinity and ionization energy of GaN/a-sapphire were 0.3 eV higher than GaN/r-sapphire film. Atomic Force Microscopic (AFM) measurements revealed faceted morphology of GaN/r-sapphire while a smooth pitted surface was observed for GaN/a-sapphire film, which is closely related to surface oxide coverage.

  7. Dependence of adhesion strength between GaN LEDs and sapphire substrate on power density of UV laser irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Park, Junsu [Department of Nano-Manufacturing Technology, Korea Institute of Machinery and Materials, 156 Gajeongbuk-Ro, Yuseong-Gu, Daejeon 34103 (Korea, Republic of); Sin, Young-Gwan [Department of Nano-Mechatronics, Korea University of Science and Technology (UST), 217 Gajeong-Ro, Yuseong-Gu, Daejeon 34113 (Korea, Republic of); Kim, Jae-Hyun [Department of Nano-Mechanics, Korea Institute of Machinery and Materials, 156 Gajeongbuk-Ro, Yuseong-Gu, Daejeon 34103 (Korea, Republic of); Kim, Jaegu, E-mail: gugu99@kimm.re.kr [Department of Nano-Manufacturing Technology, Korea Institute of Machinery and Materials, 156 Gajeongbuk-Ro, Yuseong-Gu, Daejeon 34103 (Korea, Republic of)

    2016-10-30

    Highlights: • Fundamental relationship between laser irradiation and adhesion strength, between gallium-nitride light emitted diode and sapphire substrate, is proposed during selective laser lift-off. • Two competing mechanisms affect adhesion at the irradiated interface between the GaN LED and sapphire substrate. • Ga precipitation caused by thermal decomposition and roughened interface caused by thermal damage lead to the considerable difference of adhesion strength at the interface. - Abstract: Selective laser lift-off (SLLO) is an innovative technology used to manufacture and repair micro-light-emitting diode (LED) displays. In SLLO, laser is irradiated to selectively separate micro-LED devices from a transparent sapphire substrate. The light source used is an ultraviolet (UV) laser with a wavelength of 266 nm, pulse duration of 20 ns, and repetition rate of 30 kHz. Controlled adhesion between a LED and the substrate is key for a SLLO process with high yield and reliability. This study examined the fundamental relationship between adhesion and laser irradiation. Two competing mechanisms affect adhesion at the irradiated interface between the GaN LED and sapphire substrate: Ga precipitation caused by the thermal decomposition of GaN and roughened interface caused by thermal damage on the sapphire. The competition between these two mechanisms leads to a non-trivial SLLO condition that needs optimization. This study helps understand the SLLO process, and accelerate the development of a process for manufacturing micro-LED displays via SLLO for future applications.

  8. Secondary electron emission of sapphire tungsten molybdenum and titanium for Maxwellian incident electrons

    International Nuclear Information System (INIS)

    Saussez-Hublet, M.-C.; Harbour, P.J.

    1980-06-01

    The second electron emission coefficient of various materials, namely titanium, molybdenum, tungsten and sapphire, has been calculated for a Maxwellian energy distribution from data for a normally incident monoenergetic beam of primary electrons. The most significant difference from the monoenergetic case occurs at low energies. In addition the influence of the incident angle of the electrons is discussed. (author)

  9. Optical transmittance investigation of 1-keV ion-irradiated sapphire crystals as potential VUV to NIR window materials of fusion reactors

    Directory of Open Access Journals (Sweden)

    Keisuke Iwano

    2016-10-01

    Full Text Available We investigate the optical transmittances of ion-irradiated sapphire crystals as potential vacuum ultraviolet (VUV to near-infrared (NIR window materials of fusion reactors. Under potential conditions in fusion reactors, sapphire crystals are irradiated with hydrogen (H, deuterium (D, and helium (He ions with 1-keV energy and ∼ 1020-m-2 s-1 flux. Ion irradiation decreases the transmittances from 140 to 260 nm but hardly affects the transmittances from 300 to 1500 nm. H-ion and D-ion irradiation causes optical absorptions near 210 and 260 nm associated with an F-center and an F+-center, respectively. These F-type centers are classified as Schottky defects that can be removed through annealing above 1000 K. In contrast, He-ion irradiation does not cause optical absorptions above 200 nm because He-ions cannot be incorporated in the crystal lattice due to the large ionic radius of He-ions. Moreover, the significant decrease in transmittance of the ion-irradiated sapphire crystals from 140 to 180 nm is related to the light scattering on the crystal surface. Similar to diamond polishing, ion irradiation modifies the crystal surface thereby affecting the optical properties especially at shorter wavelengths. Although the transmittances in the VUV wavelengths decrease after ion irradiation, the transmittances can be improved through annealing above 1000 K. With an optical transmittance in the VUV region that can recover through simple annealing and with a high transparency from the ultraviolet (UV to the NIR region, sapphire crystals can therefore be used as good optical windows inside modern fusion power reactors in terms of light particle loadings of hydrogen isotopes and helium.

  10. Use of sapphire as a neutron damage monitor for pressure vessel steels

    International Nuclear Information System (INIS)

    Pells, G.P.; Fudge, A.J.; Murphy, M.J.; Watt, S.

    1989-01-01

    Single crystal α-Al 2 O 3 (sapphire) has been neutron irradiated over a range of dose, dose rate and neutron energy spectra at temperatures from 60 to 310 0 C. Values of optical absorption at 400 nm, the peak of the aluminum vacancy absorption band, were plotted against damage dose expressed in terms of dpa of Al in sapphire obtained from measurements of induced radio-activity in activation foils irradiated with the sapphires and from calculation of the neutron energy spectrum at the irradiation position. The neutron energy spectrum was calculated using modern neutron transport computer codes and adjusted in the light of measurements obtained from multiple foil activation experiments. A simple response curve was obtained for all sapphires irradiated at temperatures between 220 to 310 0 C and for sapphires irradiated below 200 0 C which had been annealed at 290 0 C irrespective of dose rate or neutron beam energy spectrum. The single response curve for irradiations performed in a variety of neutron energy spectra validate the neutron energy spectrum computational procedures

  11. Changing of micromorphology of silicon-on-sapphire epitaxial layer surface at irradiation by subthreshold energy X-radiation

    CERN Document Server

    Kiselev, A N; Skupov, V D; Filatov, D O

    2001-01-01

    The morphology of silicon-on-sapphire epitaxial layer surface after pulse irradiation by the X-rays with the energy of <= 140 keV is studied. The study on the irradiated material surface is carried out by the methods of the atomic force microscopy and ellipsometry. The average roughness value after irradiation constitutes 7 nm. The change in the films surface microrelief occurs due to reconstruction of their dislocation structure under the action of elastic waves, originating in the X radiation

  12. Dependence of secondary electron emission on surface charging in sapphire and polycrystalline alumina: Evaluation of the effective cross sections for recombination and trapping

    International Nuclear Information System (INIS)

    Said, K.; Damamme, G.; Si Ahmed, A.; Moya, G.; Kallel, A.

    2014-01-01

    Highlights: • A novel approach for the analysis of the secondary electron emission in connection with the surface density of trapped charges. • Experimental estimation of the effective cross section for electron–hole recombination and electron trapping in defects. • A simplified charge transport and trapping model which corroborates qualitatively the interpretation of the results. - Abstract: The evolution of the secondary electron emission from sapphire and polycrystalline alumina during electron irradiation, achieved in a scanning electron microscope at room temperature, is derived from the measurement of the induced and the secondary electron currents. The semi-logarithmic plot of the secondary electron emission yield versus the surface density of trapped charges displays a plateau followed by a linear variation. For positive charging, the slope of the linear part, whose value is of about 10 −9 cm 2 , is independent of the primary electron energy, the microstructure and the impurities. It is interpreted as an effective microscopic cross section for electron–hole recombination. For negative charging of sapphire, the slope is associated with an effective electron trapping cross section close to 10 −11 cm 2 , which can be assigned to the dominant impurity trap. These effective values reflect the multiple interactions leading to the accumulation of charges. The yield corresponding to the plateau is controlled by the initial density of impurity traps. A charge transport and trapping >model, based on simplifying assumptions, confirms qualitatively these inferences

  13. Transmission Electron Microscopy (TEM) Sample Preparation of Si(1-x)Gex in c-Plane Sapphire Substrate

    Science.gov (United States)

    Kim, Hyun Jung; Choi, Sang H.; Bae, Hyung-Bin; Lee, Tae Woo

    2012-01-01

    The National Aeronautics and Space Administration-invented X-ray diffraction (XRD) methods, including the total defect density measurement method and the spatial wafer mapping method, have confirmed super hetero epitaxy growth for rhombohedral single crystalline silicon germanium (Si1-xGex) on a c-plane sapphire substrate. However, the XRD method cannot observe the surface morphology or roughness because of the method s limited resolution. Therefore the authors used transmission electron microscopy (TEM) with samples prepared in two ways, the focused ion beam (FIB) method and the tripod method to study the structure between Si1-xGex and sapphire substrate and Si1?xGex itself. The sample preparation for TEM should be as fast as possible so that the sample should contain few or no artifacts induced by the preparation. The standard sample preparation method of mechanical polishing often requires a relatively long ion milling time (several hours), which increases the probability of inducing defects into the sample. The TEM sampling of the Si1-xGex on sapphire is also difficult because of the sapphire s high hardness and mechanical instability. The FIB method and the tripod method eliminate both problems when performing a cross-section TEM sampling of Si1-xGex on c-plane sapphire, which shows the surface morphology, the interface between film and substrate, and the crystal structure of the film. This paper explains the FIB sampling method and the tripod sampling method, and why sampling Si1-xGex, on a sapphire substrate with TEM, is necessary.

  14. Effects of electronic and nuclear stopping power on disorder induced in GaN under swift heavy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Moisy, F., E-mail: moisy@ganil.fr [CIMAP, Normandie Universite ENSICAEN/CEA/CNRS, 6 Bd Maréchal Juin, 14050 Caen (France); Sall, M.; Grygiel, C.; Balanzat, E.; Boisserie, M.; Lacroix, B. [CIMAP, Normandie Universite ENSICAEN/CEA/CNRS, 6 Bd Maréchal Juin, 14050 Caen (France); Simon, P. [CNRS, UPR 3079 CEMHTI, CS 90055, 45071 Orléans Cedex 2 (France); Monnet, I. [CIMAP, Normandie Universite ENSICAEN/CEA/CNRS, 6 Bd Maréchal Juin, 14050 Caen (France)

    2016-08-15

    Wurtzite GaN epilayers, grown on the c-plane of sapphire substrate, have been irradiated with swift heavy ions at different energies and fluences, and thereafter studied by Raman scattering spectroscopy, UV–visible spectroscopy and transmission electron microscopy. Raman spectra show strong structural modifications in the GaN layer. Indeed, in addition to the broadening of the allowed modes, a large continuum and three new modes at approximately 200 cm{sup −1}, 300 cm{sup −1} and 670 cm{sup −1} appear after irradiation attributed to disorder-activated Raman scattering. In this case, spectra are driven by the phonon density of states of the material due to the loss of translation symmetry of the lattice induced by defects. It was shown qualitatively that both electronic excitations and elastic collisions play an important role in the disorder induced by irradiation. UV–visible spectra reveal an absorption band at 2.8 eV which is linked to the new mode at 300 cm{sup −1} observed in irradiated Raman spectra and comes from Ga-vacancies. These color centers are produced by elastic collisions (without any visible effect of electronic excitations).

  15. Investigation of the photoluminescence properties of Au/ZnO/sapphire and ZnO/Au/sapphire films by experimental study and electromagnetic simulation

    International Nuclear Information System (INIS)

    Zeng, Yong; Zhao, Yan; Jiang, Yijian

    2015-01-01

    Highlights: • Photoluminescent properties from Au/ZnO/sapphire and ZnO/Au/sapphire structures have been investigated. • The enhancement of UV intensity is a result of the enhanced electric field intensity of the 325 nm excitation light. • Electron transfer which induced by the local surface may be also account for the enhancement of UV emissions. • The suppression of the visible emissions might be due to the flowing of electrons in the defect states to the Au. - Abstract: Photoluminescent properties from Au/ZnO/sapphire and ZnO/Au/sapphire structures have been investigated. It is found that due to the co-interaction between the incident light and local surface plasmons, the ultraviolet (UV) emissions from the two structures were both enhanced and the visible emissions related to the defects were suppressed. By the means of electromagnetic simulation, it indicates that the enhancement of UV intensity is a result of the enhanced electric field intensity of the 325 nm excitation light, which is induced by localized surface plasmons resonance (LSPR). On the other hand, electron transfer which is induced by the local surface also account for the enhancement of UV emissions. The suppression of the visible emissions might be due to the flowing of electrons in the defect states to the Au, which caused the reduction of the electrons in the defect states

  16. Molecular dynamics simulation of electron trapping in the sapphire lattice

    International Nuclear Information System (INIS)

    Rambaut, C.; Oh, K.H.; Fayeulle, S.; Kohanoff, J.

    1995-10-01

    Energy storage and release in dielectric materials can be described on the basis of the charge trapping mechanism. Most phenomenological aspects have been recently rationalized in terms of the space charge mode. Dynamical aspects are studied here by performing Molecular Dynamics simulations. We show that an excess electron introduced into the sapphire lattice (α -Al 2 O 3 ) can be trapped only at a limited number of sites. The energy gained by allowing the electron to localize in these sites is of the order of 4-5 eV, in good agreement with the results of the space charge model. Displacements of the neighboring ions due to the implanted charge are shown to be localized in a small region of about 5 A. Detrapping is observed at 250 K. The ionic displacements turn out to play an important role in modifying the potential landscape by lowering, in a dynamical way, the barriers that cause localization at low temperature. (author). 18 refs, 7 figs, 2 tabs

  17. Controllable laser thermal cleavage of sapphire wafers

    Science.gov (United States)

    Xu, Jiayu; Hu, Hong; Zhuang, Changhui; Ma, Guodong; Han, Junlong; Lei, Yulin

    2018-03-01

    Laser processing of substrates for light-emitting diodes (LEDs) offers advantages over other processing techniques and is therefore an active research area in both industrial and academic sectors. The processing of sapphire wafers is problematic because sapphire is a hard and brittle material. Semiconductor laser scribing processing suffers certain disadvantages that have yet to be overcome, thereby necessitating further investigation. In this work, a platform for controllable laser thermal cleavage was constructed. A sapphire LED wafer was modeled using the finite element method to simulate the thermal and stress distributions under different conditions. A guide groove cut by laser ablation before the cleavage process was observed to guide the crack extension and avoid deviation. The surface and cross section of sapphire wafers processed using controllable laser thermal cleavage were characterized by scanning electron microscopy and optical microscopy, and their morphology was compared to that of wafers processed using stealth dicing. The differences in luminous efficiency between substrates prepared using these two processing methods are explained.

  18. Epitactical FeAl films on sapphire and their magnetic properties

    International Nuclear Information System (INIS)

    Trautvetter, Moritz

    2011-01-01

    In the presented thesis epitaxial FeAl thin films on sapphire have been prepared by pulse laser deposition (PLD). The thin films deposited at room temperature exhibits ferromagnetism and subsequent annealing is necessary to transform the thin films to paramagnetic B2-phase, where the transition temperature depends on the crystalline orientation of the sapphire substrate. Alternatively, by deposition at higher substrate temperature the B2-phase is obtained directly. However, morphology of the FeAl film is influenced by different growth modes resulting from different substrate temperatures. The paramagnetic FeAl films can then be transformed to ferromagnetic phase by successive ion irradiation. Independent of the ion species used for irradiation, the same universal relation between thin films' coercive fields and irradiation damage is identified. The ion irradiation ferromagnetism can be transformed back to paramagnetism by subsequent annealing. The mutual transition between ferromagnetic and paramagnetic phases has been performed several times and shows full reversibility. The ferromagnetic phase induced by Kr + irradiation exhibits structural relaxation, where the saturate magnetization of FeAl thin film gradually decreases in several days. Later, ion irradiation has been performed selectively on defined areas of the thin film with the help of an unconventional lithography technique. The subsequent thin film is composed of ordered hexagonal array of ferromagnetic nano-cylinders separated by a paramagnetic matrix, suggesting a promising system for magnetic data storage. (orig.)

  19. High energy (MeV) ion beam modifications of sputtered MoS2 coatings on sapphire

    International Nuclear Information System (INIS)

    Bhattacharya, R.S.; Rai, A.K.; Erdemir, A.

    1991-01-01

    The present article reports on the results of our investigations of high-energy (MeV) ion irradiation on the microstructural and tribological properties of dc magnetron sputtered MoS 2 films. Films of thicknesses 500-7500 A were deposited on NaCl, Si and sapphire substrates and subsequently ion irradiated by 2 MeV Ag + ions at a dose of 5x10 15 cm -2 . Scanning and transmission electron microscopy. Rutherford backscattering and X-ray diffraction techniques were utilized to study the structural, morphological and compositional changes of the film due to ion irradiation. The friction coefficient and sliding life were determined by pin-on-disc tests. Both as-deposited and ion-irradiated films were found to be amorphous having a stoichiometry of MoS 1.8 . A low friction coefficient in the range 0.03-0.04 was measured for both as-deposited and ion-irradiated films. However, the sliding life of ion-irradiated film was found to increase more than tenfold compared to as-deposited films indicating improved bonding at the interface. (orig.)

  20. Apparatus for irradiation with electron beam

    International Nuclear Information System (INIS)

    Uehara, K.; Ito, A.; Nishimune, K.; Fujita, K.

    1976-01-01

    An irradiation apparatus with high energy electrons is disclosed in which a wire shaped or linear object to be irradiated is moved back and forth many times under an electron window so as to irradiate it with an electron beam. According to one feature of the invention, an electron beam, which leaks through gaps between the objects to be irradiated or which penetrates the objects to be irradiated, is reversed by a magnetic field approximately perpendicular to the scanning face of the electron beam by means of a magnet which is disposed under the objects to be irradiated, and the reversed electron beam is thereby again applied to the objects to be irradiated. A high utilization rate of the electron beam is accomplished, and the objects can be thereby uniformly irradiated with the electron beam. 4 claims, 6 drawing figures

  1. Sewage sludge irradiation with electrons

    International Nuclear Information System (INIS)

    Tauber, M.

    1976-01-01

    The disinfection of sewage sludge by irradiation has been discussed very intensively in the last few months. Powerful electron accelerators are now available and the main features of the irradiation of sewage sludge with fast electrons are discussed and the design parameters of such installations described. AEG-Telefunken is building an irradiation plant with a 1.5 MeV, 25 mA electron accelerator, to study the main features of electron irradiation of sewage sludge. (author)

  2. Structural and electronic characterization of graphene grown by chemical vapor deposition and transferred onto sapphire

    International Nuclear Information System (INIS)

    Joucken, Frédéric; Colomer, Jean-François; Sporken, Robert; Reckinger, Nicolas

    2016-01-01

    Highlights: • CVD graphene is transferred onto sapphire. • Transport measurements reveal relatively low charge carriers mobility. • Scanning probe microscopy experiments reveal the presence of robust contaminant layers between the graphene and the sapphire, responsible for the low carriers mobility. - Abstract: We present a combination of magnetotransport and local probe measurements on graphene grown by chemical vapor deposition on copper foil and subsequently transferred onto a sapphire substrate. A rather strong p-doping is observed (∼9 × 10 12 cm −2 ) together with quite low carrier mobility (∼1350 cm 2 /V s). Atomic force and tunneling imaging performed on the transport devices reveals the presence of contaminants between sapphire and graphene, explaining the limited performance of our devices. The transferred graphene displays ridges similar to those observed whilst graphene is still on the copper foil. We show that, on sapphire, these ridges are made of different thicknesses of the contamination layer and that, contrary to what was reported for hBN or certain transition metal dichalcogenides, no self-cleansing process of the sapphire substrate is observed.

  3. Testing of Sapphire Optical Fiber and Sensors in Intense Radiation Fields When Subjected to Very High Temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Blue, Thomas [The Ohio State Univ., Columbus, OH (United States); Windl, Wolfgang [The Ohio State Univ., Columbus, OH (United States)

    2017-12-15

    The primary objective of this project was to determine the optical attenuation and signal degradation of sapphire optical fibers & sensors (temperature & strain), in-situ, operating at temperatures up to 1500°C during reactor irradiation through experiments and modeling. The results will determine the feasibility of extending sapphire optical fiber-based instrumentation to extremely high temperature radiation environments. This research will pave the way for future testing of sapphire optical fibers and fiber-based sensors under conditions expected in advanced high temperature reactors.

  4. Polishing Sapphire Substrates by 355 nm Ultraviolet Laser

    Directory of Open Access Journals (Sweden)

    X. Wei

    2012-01-01

    Full Text Available This paper tries to investigate a novel polishing technology with high efficiency and nice surface quality for sapphire crystal that has high hardness, wear resistance, and chemical stability. A Q-switched 355 nm ultraviolet laser with nanosecond pulses was set up and used to polish sapphire substrate in different conditions in this paper. Surface roughness Ra of polished sapphire was measured with surface profiler, and the surface topography was observed with scanning electronic microscope. The effects of processing parameters as laser energy, pulse repetition rate, scanning speed, incident angle, scanning patterns, and initial surface conditions on surface roughness were analyzed.

  5. Interfacial reactions between sapphire and Ag–Cu–Ti-based active braze alloys

    International Nuclear Information System (INIS)

    Ali, Majed; Knowles, Kevin M.; Mallinson, Phillip M.; Fernie, John A.

    2016-01-01

    The interfacial reactions between two commercially available Ag–Cu–Ti-based active braze alloys and sapphire have been studied. In separate experiments, Ag–35.3Cu–1.8Ti wt.% and Ag–26.7Cu–4.5Ti wt.% alloys have been sandwiched between pieces of R-plane orientated sapphire and heated in argon to temperatures between 750 and 900 °C for 1 min. The phases at the Ag–Cu–Ti/sapphire interfaces have been studied using selected area electron diffraction, energy dispersive X-ray spectroscopy and electron energy loss spectroscopy. Gradual and subtle changes at the Ag–Cu–Ti/sapphire interfaces were observed as a function of temperature, along with the formation of a transient phase that permitted wetting of the sapphire. Unequivocal evidence is shown that when the active braze alloys melt, titanium first migrates to the sapphire and reacts to dissolve up to ∼33 at.% oxygen, forming a nanometre-size polycrystalline layer with a chemical composition of Ti 2 O 1–x (x ≪ 1). Ti 3 Cu 3 O particles subsequently nucleate behind the Ti 2 O 1–x layer and grow to become a continuous micrometre-size layer, replacing the Ti 2 O 1–x layer. Finally at 845 °C, a nanometre-size γ-TiO layer forms on the sapphire to leave a typical interfacial structure of Ag–Cu/Ti 3 Cu 3 O/γ-TiO/sapphire consistent with that seen in samples of polycrystalline alumina joined to itself with these active braze alloys. These experimental observations have been used to establish a definitive bonding mechanism for the joining of sapphire with Ag–Cu alloys activated by small amounts of titanium.

  6. High performance sapphire windows

    Science.gov (United States)

    Bates, Stephen C.; Liou, Larry

    1993-02-01

    High-quality, wide-aperture optical access is usually required for the advanced laser diagnostics that can now make a wide variety of non-intrusive measurements of combustion processes. Specially processed and mounted sapphire windows are proposed to provide this optical access to extreme environment. Through surface treatments and proper thermal stress design, single crystal sapphire can be a mechanically equivalent replacement for high strength steel. A prototype sapphire window and mounting system have been developed in a successful NASA SBIR Phase 1 project. A large and reliable increase in sapphire design strength (as much as 10x) has been achieved, and the initial specifications necessary for these gains have been defined. Failure testing of small windows has conclusively demonstrated the increased sapphire strength, indicating that a nearly flawless surface polish is the primary cause of strengthening, while an unusual mounting arrangement also significantly contributes to a larger effective strength. Phase 2 work will complete specification and demonstration of these windows, and will fabricate a set for use at NASA. The enhanced capabilities of these high performance sapphire windows will lead to many diagnostic capabilities not previously possible, as well as new applications for sapphire.

  7. Dielectric properties during electron irradiation of alternative materials for gyrotron windows

    International Nuclear Information System (INIS)

    Vila, R.; Ibarra, A.; Hodgson, E.R.

    1996-01-01

    Recent work on high power gyrotron windows has focused interest on some homopolar insulators as alternatives to sapphire due to their combined low dielectric loss and high thermal conductivity. The two main candidates at this moment, CVD diamond and high resistivity silicon, have been studied. As an indicator of their radiation behaviour, loss tangent and permittivity at about 15 GHz have been measured under 1.8 MeV electron irradiation at RT. In the case of silicon the previously observed radiation-induced decrease of loss tangent has been confirmed reaching a lower saturation level of 3.5 x 10 -5 at higher doses, and falling with increasing frequency. An even more important observation is that the sensitivity to ionizing radiation dropped by 4 orders of magnitude due to the radiation dose. First results for diamond are also promising, only a small degradation at relatively short times being seen with no further changes up to the maximum dose used. (orig.)

  8. Electron-irradiation-induced phase transformation in alumina

    International Nuclear Information System (INIS)

    Chen, C.L.; Arakawa, K.; Lee, J.-G.; Mori, H.

    2010-01-01

    In this study, electron-irradiation-induced phase transformations between alumina polymorphs were investigated by high-resolution transmission electron microscopy. It was found that the electron-irradiation-induced α → κ' phase transformation occurred in the alumina under 100 keV electron irradiation. It is likely that the knock-on collision between incident electrons and Al 3+ cations is responsible for the occurrence of electron-irradiation-induced phase transformation from α-alumina to κ'-alumina.

  9. Order in nanometer thick intergranular films at Au-sapphire interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Baram, Mor [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Garofalini, Stephen H. [Department of Materials Science and Engineering, Rutgers University, Piscataway, NJ 08854-8065 (United States); Kaplan, Wayne D., E-mail: kaplan@tx.technion.ac.il [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel)

    2011-08-15

    Highlights: {yields} Au particles were equilibrated on (0 0 0 1) sapphire in the presence of anorthite. {yields} 1.2 nm thick equilibrium films (complexions) were formed at the Au-sapphire interfaces. {yields} Quantitative HRTEM was used to study the atomistic structure of the films. {yields} Structural order was observed in the 1.2 nm thick films adjacent to the sapphire crystal. {yields} This demonstrates that ordering is an intrinsic part of equilibrium intergranular films. - Abstract: In recent years extensive studies on interfaces have shown that {approx}1 nm thick intergranular films (IGF) exist at interfaces in different material systems, and that IGF can significantly affect the materials' properties. However, there is great deal of uncertainty whether such films are amorphous or partially ordered. In this study specimens were prepared from Au particles that were equilibrated on sapphire substrates in the presence of anorthite glass, leading to the formation of 1.2 nm thick IGF at the Au-sapphire interfaces. Site-specific cross-section samples were characterized using quantitative high resolution transmission electron microscopy to study the atomistic structure of the films. Order was observed in the 1.2 nm thick films adjacent to the sapphire crystal in the form of 'Ca cages', experimentally demonstrating that ordering is an intrinsic part of IGF, as predicted from molecular dynamics and diffuse interface theory.

  10. Structural changes induced by electron irradiation

    International Nuclear Information System (INIS)

    Koike, J.; Pedraza, D.F.

    1993-01-01

    Highly oriented pyrolytic graphite was irradiated at room temperature with 300 kV electrons. Transmission electron microscopy and electron energy loss spectroscopy were employed to study the structural changes produced by irradiation. The occurrence of a continuous ring intensity in the selected area diffraction (SAD) pattern obtained on a specimen irradiated with the electron beam parallel to the c-crystallographic axis indicated that microstructural changes had occurred. However, from the SAD pattern obtained for the specimens tilted relative to the irradiation direction, it was found that up to a fluence of 1.1x10 27 e/m 2 graphite remained crystalline. An SAD pattern of a specimen irradiated with the electron beam perpendicular to the c-axis confirmed the persistence of crystalline order. High resolution electron microscopy showed that ordering along the c-axis direction remained. A density reduction of 8.9% due to irradiation was determined from the plasmon frequency shift. A qualitative model is proposed to explain these observations. A new determination of the threshold displacement energy, Ed, of carbon atoms in graphite was done by examining the appearance of a continuous ring in the SAD pattern at various electron energies. A value of 30 eV was obtained whether the incident electron beam was parallel or perpendicular to the c-axis, demonstrating that Ed is independent of the displacement direction

  11. Application of electron beam irradiation. 4. Treatment of pollutants by electron beam irradiation

    International Nuclear Information System (INIS)

    Tokunaga, Okihiro; Arai, Hidehiko

    1994-01-01

    Electron beam irradiation is capable of dissolving and removing pollutants, such as sulfur oxides, nitrogen oxides, and organic compounds, by easy production of OH radicals in flue gas and water. This paper deals with current status in the search for techniques for treating flue gas and waste water, using electron beam irradiation. Pilot tests have been conducted during the period 1991-1994 for the treatment of flue gas caused by coal and garbage burning and road tunnels. Firstly, techniques for cleaning flue gas with electron beams are outlined, with special reference to their characteristics and process of research development. Secondly, the application of electron beam irradiation in the treatment of waste water is described in terms of the following: (1) disinfection of sewage, (2) cleaning of water polluted with toxic organic compounds, (3) treatment for eliminating sewage sludge, (4) promotion of sewage sludge sedimentation, (5) disinfection and composting of sewage sludge, and (6) regeneration of activated carbon used for the treatment of waste water. (N.K.)

  12. Defect formation and recrystallization in the silicon on sapphire films under Si{sup +} irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Shemukhin, A.A., E-mail: shemuhin@gmail.com [Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow (Russian Federation); Nazarov, A.V.; Balakshin, Yu. V. [Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow (Russian Federation); Chernysh, V.S. [Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow (Russian Federation); Faculty of Physics, Lomonosov Moscow State University, Moscow (Russian Federation)

    2015-07-01

    Silicon-on-sapphire (SOS) is one of the most promising silicon-on-insulator (SOI) technologies. SOS structures are widely used in microelectronics, but to meet modern requirements the silicon layer should be 100 nm thick or less. The problem is in amount of damage in the interface layer, which decreases the quality of the produced devices. In order to improve the crystalline structure quality SOS samples with 300 nm silicon layers were implanted with Si{sup +} ions with energies in the range from 180 up to 230 keV with fluences in the range from 10{sup 14} up to 5 × 10{sup 15} cm{sup −2} at 0 °C. The crystalline structure of the samples was studied with RBS and the interface layer was studied with SIMS after subsequent annealing. It has been found out that to obtain silicon films with high lattice quality it is necessary to damage the sapphire lattice near the silicon–sapphire interface. Complete destruction of the strongly defected area and subsequent recrystallization depends on the energy of implanted ions and the substrate temperature. No significant mixing in the interface layer was observed with the SIMS.

  13. Electron trapping during irradiation in reoxidized nitrided oxide

    International Nuclear Information System (INIS)

    Mallik, A.; Vasi, J.; Chandorkar, A.N.

    1993-01-01

    Isochronal detrapping experiments have been performed following irradiation under different gate biases in reoxidized nitrided oxide (RNO) MOS capacitors. These show electron trapping by the nitridation-induced electron traps at low oxide fields during irradiation. A difference in the detrapping behavior of trapped holes and electrons is observed, with trapped holes being detrapped at relatively lower temperatures compared to trapped electrons. Electron trapping shows a strong dependence on tile magnitude of the applied gate bias during irradiation but is independent of its polarity. Conventional oxide devices, as expected, do not show any electron trapping during irradiation by the native electron traps. Finally, a comparison of the isochronal detrapping behavior following irradiation and following avalanche injection of electrons has been made to estimate the extent of electron trapping. The results show that electron trapping by the nitridation-induced electron traps does not play the dominant role in improving radiation performance of RNO, though its contribution cannot be completely neglected for low oxide field irradiations

  14. Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy

    Science.gov (United States)

    Yang, Xu; Nitta, Shugo; Pristovsek, Markus; Liu, Yuhuai; Nagamatsu, Kentaro; Kushimoto, Maki; Honda, Yoshio; Amano, Hiroshi

    2018-05-01

    Hexagonal boron nitride (h-BN) films directly grown on c-plane sapphire substrates by pulsed-mode metalorganic vapor phase epitaxy exhibit an interlayer for growth temperatures above 1200 °C. Cross-sectional transmission electron microscopy shows that this interlayer is amorphous, while the crystalline h-BN layer above has a distinct orientational relationship with the sapphire substrate. Electron energy loss spectroscopy shows the energy-loss peaks of B and N in both the amorphous interlayer and the overlying crystalline h-BN layer, while Al and O signals are also seen in the amorphous interlayer. Thus, the interlayer forms during h-BN growth through the decomposition of the sapphire at elevated temperatures.

  15. An injection modelocked Ti-sapphire laser for synchronous photoinjection

    International Nuclear Information System (INIS)

    Hovater, C.; Poelker, M.

    1997-01-01

    The CEBAF 4 GeV accelerator has recently begun delivering spin-polarized electrons for nuclear physics experiments. Spin-polarized electrons are emitted from a GaAs photocathode that is illuminated with pulsed laser light from a diode laser system synchronized to the injector chopping frequency (499 MHz). The present diode laser system is compact, reliable and relatively maintenance-free; however, output power is limited to less than 500 mW. In an effort to obtain higher average power and thereby prolong the effective operating lifetime of the source, they have constructed an injection modelocked Ti-sapphire laser with picosecond pulsewidths and gigahertz repetition rates. Modelocked operation is obtained through gain modulation within the Ti-sapphire crystal as a result of injection seeding with a gain-switched diode laser. Unlike conventional modelocked lasers, the pulse repetition rate of this laser can be discretely varied by setting the seed laser repetition rate equal to multiples of the Ti-sapphire laser cavity fundamental frequency. They observe pulse repetition rates from 223 MHz (fundamental) to 1,560 MHz (seventh harmonic) with average output power of 700 mW for all repetition rates. Pulsewidths ranged from 21 to 39 ps (FWHM) under various pump laser conditions

  16. Theoretical studies on lattice-oriented growth of single-walled carbon nanotubes on sapphire

    Science.gov (United States)

    Li, Zhengwei; Meng, Xianhong; Xiao, Jianliang

    2017-09-01

    Due to their excellent mechanical and electrical properties, single-walled carbon nanotubes (SWNTs) can find broad applications in many areas, such as field-effect transistors, logic circuits, sensors and flexible electronics. High-density, horizontally aligned arrays of SWNTs are essential for high performance electronics. Many experimental studies have demonstrated that chemical vapor deposition growth of nanotubes on crystalline substrates such as sapphire offers a promising route to achieve such dense, perfectly aligned arrays. In this work, a theoretical study is performed to quantitatively understand the van der Waals interactions between SWNTs and sapphire substrates. The energetically preferred alignment directions of SWNTs on A-, R- and M-planes and the random alignment on the C-plane predicted by this study are all in good agreement with experiments. It is also shown that smaller SWNTs have better alignment than larger SWNTs due to their stronger interaction with sapphire substrate. The strong vdW interactions along preferred alignment directions can be intuitively explained by the nanoscale ‘grooves’ formed by atomic lattice structures on the surface of sapphire. This study provides important insights to the controlled growth of nanotubes and potentially other nanomaterials.

  17. Electron irradiation of power transistors

    International Nuclear Information System (INIS)

    Hower, P.L.; Fiedor, R.J.

    1982-01-01

    A method for reducing storage time and gain parameters in a semiconductor transistor includes the step of subjecting the transistor to electron irradiation of a dosage determined from measurements of the parameters of a test batch of transistors. Reduction of carrier lifetime by proton bombardment and gold doping is mentioned as an alternative to electron irradiation. (author)

  18. Electron irradiation of zeolites

    International Nuclear Information System (INIS)

    Wang, S.X.; Wang, L.M.; Ewing, R.C.

    1999-01-01

    Three different zeolites (analcime, natrolite, and zeolite-Y) were irradiated with 200 keV and 400 keV electrons. All zeolites amorphized under a relatively low electron fluence. The transformation from the crystalline-to-amorphous state was continuous and homogeneous. The electron fluences for amorphization of the three zeolites at room temperature were: 7.0 x 10 19 e - /cm 2 (analcime), 1.8 x 10 20 e - /cm 2 (natrolite), and 3.4 x 10 20 e - /cm 2 (zeolite-Y). The different susceptibilities to amorphization are attributed to the different channel sizes in the structures which are the pathways for the release of water molecules and Na + . Natrolite formed bubbles under electron irradiation, even before complete amorphization. Analcime formed bubbles after amorphization. Zeolite-Y did not form bubbles under irradiation. The differences in bubble formation are attributed to the different channel sizes of the three zeolites. The amorphization dose was also measured at different temperatures. An inverse temperature dependence of amorphization dose was observed for all three zeolites: electron dose for amorphization decreased with increasing temperature. This unique temperature effect is attributed to the fact that zeolites are thermally unstable. A semi-empirical model was derived to describe the temperature effect of amorphization in these zeolites

  19. Structural and electronic properties of InN epitaxial layer grown on c-plane sapphire by chemical vapor deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Barick, Barun Kumar, E-mail: bkbarick@gmail.com; Prasad, Nivedita; Saroj, Rajendra Kumar; Dhar, Subhabrata [Department of Physics, Indian Institute of Technology, Bombay, Mumbai 400076 (India)

    2016-09-15

    Growth of InN epilayers on c-plane sapphire substrate by chemical vapor deposition technique using pure indium metal and ammonia as precursors has been systematically explored. It has been found that [0001] oriented indium nitride epitaxial layers with smooth surface morphology can be grown on c-plane sapphire substrates by optimizing the growth conditions. Bandgap of the film is observed to be Burstein–Moss shifted likely to be due to high background electron concentration. It has been found that the concentration of this unintentional doping decreases with the increase in the growth temperature and the ammonia flux. Epitaxial quality on the other hand deteriorates as the growth temperature increases. Moreover, the morphology of the deposited layer has been found to change from flat top islands to faceted mounds as the flow rate of ammonia increases. This phenomenon is expected to be related to the difference in surface termination character at low and high ammonia flow rates.

  20. Electron accelerator technology research in food irradiation

    International Nuclear Information System (INIS)

    Jin Jianqiao; Ye Mingyang; Zhang Yue; Yang Bin; Xu Tao; Kong Xiangshan

    2014-01-01

    Electronic accelerator was applied to instead of cobalt sources for food irradiation, to keep food quality and to improve the effect of the treatment. Appropriate accelerator parameters lead to optimal technique. The irradiation effect is associated with the relationship between uniformity and irradiating speed, the effect of cargo size on radiation penetration, as well as other factors that affect the irradiation effects. Industrialization of electron accelerator irradiation will be looked to the future. (authors)

  1. Electron beam irradiating device

    Energy Technology Data Exchange (ETDEWEB)

    Shinohara, K

    1969-12-20

    The efficiency of an electron beam irradiating device is heightened by improving the irradiation atmosphere and the method of cooling the irradiation window. An irradiation chamber one side of which incorporates the irradiation windows provided at the lower end of the scanner is surrounded by a suitable cooling system such as a coolant piping network so as to cool the interior of the chamber which is provided with circulating means at each corner to circulate and thus cool an inert gas charged therewithin. The inert gas, chosen from a group of such gases which will not deleteriously react with the irradiating equipment, forms a flowing stream across the irradiation window to effect its cooling and does not contaminate the vacuum exhaust system or oxidize the filament when penetrating the equipment through any holes which the foil at the irradiation window may incur during the irradiating procedure.

  2. Electron beam influence on the carbon contamination of electron irradiated hydroxyapatite thin films

    International Nuclear Information System (INIS)

    Hristu, Radu; Stanciu, Stefan G.; Tranca, Denis E.; Stanciu, George A.

    2015-01-01

    Highlights: • Carbon contamination mechanisms of electron-beam-irradiated hydroxyapatite. • Atomic force microscopy phase imaging used to detect carbon contamination. • Carbon contamination dependence on electron energy, irradiation time, beam current. • Simulation of backscattered electrons confirms the experimental results. - Abstract: Electron beam irradiation which is considered a reliable method for tailoring the surface charge of hydroxyapatite is hindered by carbon contamination. Separating the effects of the carbon contamination from those of irradiation-induced trapped charge is important for a wide range of biological applications. In this work we focus on the understanding of the electron-beam-induced carbon contamination with special emphasis on the influence of the electron irradiation parameters on this phenomenon. Phase imaging in atomic force microscopy is used to evaluate the influence of electron energy, beam current and irradiation time on the shape and size of the resulted contamination patterns. Different processes involved in the carbon contamination of hydroxyapatite are discussed

  3. Thermal stress resistance of ion implanted sapphire crystals

    International Nuclear Information System (INIS)

    Gurarie, V.N.; Jamieson, D.N.; Szymanski, R.; Orlov, A.V.; Williams, J.S.; Conway, M.

    1999-01-01

    Monocrystals of sapphire have been subjected to ion implantation with 86 keV Si - and 80 keV Cr - ions to doses in the range of 5x10 14 -5x10 16 cm -2 prior to thermal stress testing in a pulsed plasma. Above a certain critical dose ion implantation is shown to modify the near-surface structure of samples by introducing damage, which makes crack nucleation easier under the applied stress. The effect of ion dose on the stress resistance is investigated and the critical doses which produce a noticeable change in the stress resistance are determined. The critical dose for Si ions is shown to be much lower than that for Cr - ions. However, for doses exceeding 2x10 16 cm -2 the stress resistance parameter decreases to approximately the same value for both implants. The size of the implantation-induced crack nucleating centers and the density of the implantation-induced defects are considered to be the major factors determining the stress resistance of sapphire crystals irradiated with Si - and Cr - ions

  4. Dose controlled low energy electron irradiator for biomolecular films.

    Science.gov (United States)

    Kumar, S V K; Tare, Satej T; Upalekar, Yogesh V; Tsering, Thupten

    2016-03-01

    We have developed a multi target, Low Energy Electron (LEE), precise dose controlled irradiator for biomolecular films. Up to seven samples can be irradiated one after another at any preset electron energy and dose under UHV conditions without venting the chamber. In addition, one more sample goes through all the steps except irradiation, which can be used as control for comparison with the irradiated samples. All the samples are protected against stray electron irradiation by biasing them at -20 V during the entire period, except during irradiation. Ethernet based communication electronics hardware, LEE beam control electronics and computer interface were developed in house. The user Graphical User Interface to control the irradiation and dose measurement was developed using National Instruments Lab Windows CVI. The working and reliability of the dose controlled irradiator has been fully tested over the electron energy range of 0.5 to 500 eV by studying LEE induced single strand breaks to ΦX174 RF1 dsDNA.

  5. Dose controlled low energy electron irradiator for biomolecular films

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, S. V. K., E-mail: svkk@tifr.res.in; Tare, Satej T.; Upalekar, Yogesh V.; Tsering, Thupten [Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai 400 005 (India)

    2016-03-15

    We have developed a multi target, Low Energy Electron (LEE), precise dose controlled irradiator for biomolecular films. Up to seven samples can be irradiated one after another at any preset electron energy and dose under UHV conditions without venting the chamber. In addition, one more sample goes through all the steps except irradiation, which can be used as control for comparison with the irradiated samples. All the samples are protected against stray electron irradiation by biasing them at −20 V during the entire period, except during irradiation. Ethernet based communication electronics hardware, LEE beam control electronics and computer interface were developed in house. The user Graphical User Interface to control the irradiation and dose measurement was developed using National Instruments Lab Windows CVI. The working and reliability of the dose controlled irradiator has been fully tested over the electron energy range of 0.5 to 500 eV by studying LEE induced single strand breaks to ΦX174 RF1 dsDNA.

  6. Electron irradiation effect on single crystal of niobium

    International Nuclear Information System (INIS)

    Otero, M.P.; Lucki, G.

    1984-01-01

    The effect of electron irradiation (900 KeV) on gliding dislocations of single crystal Nb with its tensile axe in the [941] orientation was observed for the in-situ deformation in a high voltage electron microscope (HVEM) at Argonne National Laboratory. The experimental was carried out by the 1 hour-electron irradiation with no stress applied. Straight dislocations actuating as sinks for the electron produced defects became helicoidal as the irradiation proceeded. Frenkel pairs were created in Nb for electron energies > = 650 KeV and, as the single vacancies do not undergo long-range migration in Nb at temperatures much below 620 K, the defects that are entrapped by the dislocations are self-interstitials produced by electron displacement. Applying the stress it was possible to observe that modified dislocations did not glide while the dislocations not affected by the irradiation are visibly in movement. This important result explains the neutron and electron-irradiation induced work-hardening effect for Nb that was previously observed. (Author) [pt

  7. Electron beam dosimetry for a thin-layer absorber irradiated by 300-keV electrons

    International Nuclear Information System (INIS)

    Kijima, Toshiyuki; Nakase, Yoshiaki

    1993-01-01

    Depth-dose distributions in thin-layer absorbers were measured for 300-keV electrons from a scanning-type irradiation system, the electrons having penetrated through a Ti-window and an air gap. Irradiations of stacks of cellulose triacetate(CTA) film were carried out using either a conveyor (i.e. dynamic irradiation) or fixed (i.e. static) irradiation. The sample was irradiated using various angles of incidence of electrons, in order to examine the effect of obliqueness of electron incidence at low-energy representative of routine radiation curing of thin polymeric or resin layers. Dynamic irradiation gives broader and shallower depth-dose distributions than static irradiation. Greater obliqueness of incident electrons gives results that can be explained in terms of broader and shallower depth-dose distributions. The back-scattering of incident electrons by a metal(Sn) backing material enhances the absorbed dose in a polymeric layer and changes the overall distribution. It is suggested that any theoretical estimations of the absorbed dose in thin layers irradiated in electron beam curing must be accomplished and supported by experimental data such as that provided by this investigation. (Author)

  8. A 20 keV electron gun system for the electron irradiation experiments

    International Nuclear Information System (INIS)

    Mahapatra, S.K.; Dhole, S.D.; Bhoraskar, V.N.

    2005-01-01

    An electron gun consisting of cathode, focusing electrode, control electrode and anode has been designed and fabricated for the electron irradiation experiments. This electron gun can provide electrons of any energy over the range 1-20 keV, with current upto 50 μA. This electron gun and a Faraday cup are mounted in the cylindrical chamber. The samples are fixed on the Faraday cup and irradiated with electrons at a pressure ∼10 -7 mbar. The special features of this electron gun system are that, at any electron energy above 1 keV, the electron beam diameter can be varied from 5 to 120 mm on the Faraday cup mounted at a distance of 200 mm from the anode in the chamber. The variation in the electron current over the beam spot of 120 mm diameter is less than 15% and the beam current stability is better than 5%. This system is being used for studying the irradiation effects of 1-20 keV energy electrons on the space quality materials in which the irradiation time may vary from a few tens of seconds to hours

  9. A 20 keV electron gun system for the electron irradiation experiments

    Energy Technology Data Exchange (ETDEWEB)

    Mahapatra, S.K. [Department of Physics, University of Pune, Pune 411007 (India); Dhole, S.D. [Department of Physics, University of Pune, Pune 411007 (India); Bhoraskar, V.N. [Department of Physics, University of Pune, Pune 411007 (India)]. E-mail: vnb@physics.unipune.ernet.in

    2005-01-01

    An electron gun consisting of cathode, focusing electrode, control electrode and anode has been designed and fabricated for the electron irradiation experiments. This electron gun can provide electrons of any energy over the range 1-20 keV, with current upto 50 {mu}A. This electron gun and a Faraday cup are mounted in the cylindrical chamber. The samples are fixed on the Faraday cup and irradiated with electrons at a pressure {approx}10{sup -7} mbar. The special features of this electron gun system are that, at any electron energy above 1 keV, the electron beam diameter can be varied from 5 to 120 mm on the Faraday cup mounted at a distance of 200 mm from the anode in the chamber. The variation in the electron current over the beam spot of 120 mm diameter is less than 15% and the beam current stability is better than 5%. This system is being used for studying the irradiation effects of 1-20 keV energy electrons on the space quality materials in which the irradiation time may vary from a few tens of seconds to hours.

  10. Green coffee decontamination by electron beam irradiation

    International Nuclear Information System (INIS)

    Nemtanu, Monica R.; Brasoveanu, Mirela; Grecu, Maria Nicoleta; Minea, R.

    2005-01-01

    Microbiological load of green coffee is a real problem considering that it is extremely sensitive to contamination. Irradiation is a decontamination method for a lot of foodstuffs, being a feasible, very effective and environment friendly one. Beans and ground green coffee were irradiated with electron beams up to 40 kGy. Microbial load, rheological behavior, electron paramagnetic resonance (EPR) and visible spectroscopy were carried out. The results show that electron beam irradiation of green coffee could decontaminate it without severe changes in its properties

  11. Electron beam irradiation facility for low to high dose irradiation applications

    International Nuclear Information System (INIS)

    Petwal, V.C.; Wanmode, Yashwant; Verma, Vijay Pal; Bhisikar, Abhay; Dwivedi, Jishnu; Shrivastava, P.; Gupta, P.D.

    2013-01-01

    Electron beam based irradiation facilities are becoming more and more popular over the conventional irradiator facilities due to many inherent advantages such as tunability of beam energy, availability of radiation both in electron mode and X-ray mode, wide range of the dose rate, control of radiation from a ON-OFF switch and other safety related merits. A prototype experimental facility based on electron accelerator has been set-up at RRCAT to meet the low-dose, medium dose and high-dose requirements for radiation processing of food, agricultural and medical products. The facility can be operated in the energy range from 7-10 MeV at variable power level from 0.05-3 kW to meet the dose rate requirement of 100 Gy to kGy. The facility is also equipped with a Bremsstrahlung converter optimized for X-ray irradiation at 7.5 MV. Availability of dose delivery in wide range with precision control and measurement has made the facility an excellent tool for researchers interested in electron/X-ray beam irradiation. A precision dosimetry lab based on alanine EPR and radiochromic film dosimetry system have been established to characterize the radiation field and precise dose measurements. Electron beam scattering technique has been developed to achieve low dose requirement for EB irradiation of various seeds such as groundnut, wheat, soybeans, moong beans, black gram etc. for mutation related studies. This paper describes various features of the facility together with the dosimetric measurements carried out for qualification of the facility and recent irradiation experiments carried out using this facility. (author)

  12. Cost evaluation of irradiation system with electron accelerator

    International Nuclear Information System (INIS)

    Kashiwagi, M.

    2003-01-01

    The features of electron beam irradiation system using electron accelerator are direct energy pour into the irradiated material, no third material mixture such as catalyst, suitable for mass production and easy operation and maintenance work available. These features can bring the various applications such as cross-linking action, graft polymerization, radical polymerization and others. The selection of electron accelerator ratings is made under consideration of quality, width and thickness of irradiated material, production amount, dose required for reaction and irradiation atmosphere. Especially in a case of irradiation of wire with high insulation material such as polyethylene, the consideration of maximum thickness toward irradiation direction is necessary to avoid the discharge (Lichtenberg discharge) by charged-up electrons inside insulation material. Therefore, the acceleration voltage should be selected to make the maximum penetration larger than maximum irradiation thickness. The actual model case of estimate the irradiation cost was selected that the irradiation object was polyethylene insulated wire up to AWG no.14, irradiation amount was 5,000 km/month, necessary dose was 200 kGy, operation time was 22 d/month and 8 h/day and actual operation efficiency was considered loss time such as bobbin changing as 80%. The selected ratings of electron accelerator were acceleration voltage of 800 kV, beam current of 100 mA and irradiation width of 180 cm with irradiation pulleys stand of 60 turns x 3 lanes. The initial total cost was estimated as 3 M$(US) and operation cost was evaluated as 215 k$(US). Therefore, the irradiation cost of wire was evaluated as 0.0036 $/m. (author)

  13. Comparison of electron-irradiation and gamma-irradiation as a decontamination treatment of spices

    International Nuclear Information System (INIS)

    Hayashi, Toru; Todoriki, Setsuko; Mamun.

    1993-01-01

    Electron-irradiation at 10 kGy decontaminated all the eight kinds of spices (black pepper, white pepper, nutmeg, red pepper, parsley, paprika, laurel and onion powder) to the microbial levels lower than 10 2 /g. Similar sterilization effects by the irradiation were observed on heat-resistant bacterial spores. The 10 kGy irradiation did not significantly affect the contents of essential oils and colors of the spices. These results indicate that electron-irradiation at 10 kGy effectively decontaminates spices without notable adverse effect on the qualities. The disinfecting effect of electron beams on spices was smaller than that of gamma-rays. (author)

  14. The S-DALINAC polarized electron injector SPIN

    Energy Technology Data Exchange (ETDEWEB)

    Eckardt, Christian; Bahlo, Thore; Bangert, Phillip; Barday, Roman; Bonnes, Uwe; Brunken, Marco; Burandt, Christoph; Eichhorn, Ralf; Enders, Joachim; Espig, Martin; Platz, Markus; Poltoratska, Yuliya; Roth, Markus; Schneider, Fabian; Wagner, Markus; Weber, Antje; Zwicker, Benjamin [Institut fuer Kernphysik, Technische Universitaet, Darmstadt (Germany); Ackermann, Wolfgang; Mueller, Wolfgang F.O.; Weiland, Thomas [Institut fuer Theorie Elektromagnetischer Felder, Technische Universitaet, Darmstadt (Germany); Aulenbacher, Kurt [Institut fuer Kernphysik, Johannes Gutenberg-Universitaet, Mainz (Germany)

    2011-07-01

    A source of polarized electrons has been installed at the superconducting 130 MeV Darmstadt electron linac S-DALINAC. Polarized electrons are generated by irradiating a GaAs cathode with pulsed Ti:Sapphire and diode lasers and preaccelerated to 100 keV. A Wien filter and 100 keV Mott polarimeter are used for spin manipulation and polarization measurement and various beam diagnostic elements are installed. To measure the beam polarization downstream of the superconducting injector linac a 5-10 MeV Mott polarimeter and a Compton-transmission polarimeter have been developed. We report on the status of the polarized electron source and foreseen experiments.

  15. Sprout inhibition of potatoes by electron irradiation, (2)

    International Nuclear Information System (INIS)

    Furuta, Junichiro; Hiraoka, Eiichi; Okamoto, Shinichi; Fujishiro, Masatoshi; Kanazawa, Tamotsu; Ohnishi, Tokuhiro; Tsujii, Yukio; Hori, Shiro

    1982-01-01

    Sprouting of potatoes are inhibited usually by the gamma-ray irradiation. The buds of potatoes exist in a very thin layer near surface of each tuber. So the inhibition will be performed sufficiently by surface irradiation using electron beams. To irradiate all surfaces of each potato uniformly, the authors prepare a new apparatus which is a conveyer passing under an electron beam scanner of accelerator rotating the potatoes by many rotating rollers. The sprout inhibition experiment of potatoes was performed by following three methods to obtain the performance of this apparatus, and the results were compared. 1) turn over irradiation method --- potatoes were arranged in one layer in plastic baskets and were irradiated on the conveyor. After irradiation, the potatoes were turned over and were irradiated again. 2) rotating irradiation method --- potatoes were rotated on the rotating roller apparatus set on the conveyer and were passed under the electron beam scanner. 3) rotating irradiation method with an improved rotating roller apparatus --- the rotating rollers have many protuberances on their surface to irradiate all of potato surface more uniform. 550 keV electron beams by Cockcroft-Walton type accelerator were used for the irradiation and the irradiated dose was 5 to 20 krad. 40 pieces of potates, ''Danshaku'' variety yielded in June 1981, were irradiated for each dose in the beginning of August. Prior to these irradiation experiments, the dose and dose uniformity were checked by the agar color dosimeters. After the irradiation, potatoes were stored in natural condition and their sprouting was observed. The potatoes irradiated by the improved rotating roller apparatus were almost completely sprout-inhibited by 20 krad irradiation. (author)

  16. Electron irradiation-induced defects in {beta}-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Oshima, Ryuichiro [Osaka Prefectural Univ., Sakai (Japan). Reseach Inst. for Advanced Science and Technology

    1996-04-01

    To add information of point defects in cubic crystal SiC, polycrystal {beta}-SiC on the market was used as sample and irradiated by neutron and electron. In situ observation of neutron and electron irradiation-induced defects in {beta}-SiC were carried out by ultra high-voltage electronic microscope (UHVEM) and ordinary electronic microscope. The obtained results show that the electron irradiation-induced secondary defects are micro defects less than 20 nm at about 1273K, the density of defects is from 2x10{sup 17} to 1x10{sup 18}/cc, the secondary defects may be hole type at high temperature and the preexistant defects control nuclear formation of irradiation-induced defects, effective sink. (S.Y.)

  17. Development of UV absorbing PET through Electron Irradiation

    International Nuclear Information System (INIS)

    Kim, Jung Woo; Lee, Na Eun; Lim, Hyung San; Park, Yang Jeong; Cho, Sung Oh

    2017-01-01

    Experiment to increase UV absorbance through electron beam irradiation on PET was performed. Moreover, surface hardness and roughness of each sample were observed to find the key factor increasing UV absorbance. PET sheets were irradiated with an electron beam at various fluences. The irradiated samples, as well as pristine sample, were subjected to UV-visible spectral study(UV-Vis), pencil hardness test, and scanning electron microscopy(SEM) experiment. In this study, PET samples irradiated at several conditions were analyzed through various measurements. UV absorbance-another meaning of transmittance in this study- of irradiated PET sample increased compared with pristine sample as fluence was increased in UV-Visible spectroscopy experiment.

  18. Microstructure evolution in carbon-ion implanted sapphire

    International Nuclear Information System (INIS)

    Orwa, J. O.; McCallum, J. C.; Jamieson, D. N.; Prawer, S.; Peng, J. L.; Rubanov, S.

    2010-01-01

    Carbon ions of MeV energy were implanted into sapphire to fluences of 1x10 17 or 2x10 17 cm -2 and thermally annealed in forming gas (4% H in Ar) for 1 h. Secondary ion mass spectroscopy results obtained from the lower dose implant showed retention of implanted carbon and accumulation of H near the end of range in the C implanted and annealed sample. Three distinct regions were identified by transmission electron microscopy of the implanted region in the higher dose implant. First, in the near surface region, was a low damage region (L 1 ) composed of crystalline sapphire and a high density of plateletlike defects. Underneath this was a thin, highly damaged and amorphized region (L 2 ) near the end of range in which a mixture of i-carbon and nanodiamond phases are present. Finally, there was a pristine, undamaged sapphire region (L 3 ) beyond the end of range. In the annealed sample some evidence of the presence of diamond nanoclusters was found deep within the implanted layer near the projected range of the C ions. These results are compared with our previous work on carbon implanted quartz in which nanodiamond phases were formed only a few tens of nanometers from the surface, a considerable distance from the projected range of the ions, suggesting that significant out diffusion of the implanted carbon had occurred.

  19. Apparatus for electron beam irradiation of objects

    International Nuclear Information System (INIS)

    Dmitriev, S.P.; Ivanov, A.S.; Sviniin, M.P.; Fedotov, M.T.

    1984-01-01

    This patent provides an apparatus for electron beam irradiation of objects, comprising a shaper of a ribbon-shaped electron beam and a deflecting electromagnet having a frame-type magnetic circuit and used to direct said electron beam onto an irradiated object substantially at an angle of 90 degrees. The deflecting electromagnet has two poles extended over the width of the irradiated object and comprises two windings embracing said poles and connected to a d.c. source. The deflecting electromagnet is arranged in such a manner that the trajectories of the electrons at an area from the shaper to the electromagnet are inclined to the plane of the frame of its magnetic circuit

  20. Application of electron beam irradiation, (1). Development and application of electron beam processors

    International Nuclear Information System (INIS)

    Katsumura, Yosuke

    1994-01-01

    This paper deals with characteristics, equipment (principle and kinds), present conditions, and future issues in the application of electron beam irradiation. Characteristics of electron beams are described in terms of the following: chemical and biological effects of radiation; energy and penetrating power of electron beams; and principle and kinds of electron beam accelerator. Industrial application of electron beam irradiation has advantages of high speed procedure and producibility, less energy, avoidance of poisonous gas, and extreme reduction of organic solvents to be used. The present application of electron beam irradiation cen be divided into the following: (1) hardening of resin or coated membrane; (2) improvement of macromolecular materials; (3) environmental protection; (4) sterilization; (5) food sterilization. The present equipment for electron beam irradiation is introduced according to low energy, medium energy, and high energy equipment. Finally, future issues focuses on (1) the improvement of traceability system and development of electron dosimetric techniques and (2) food sterilization. (N.K.)

  1. Food irradiation by low energy electrons

    International Nuclear Information System (INIS)

    Bird, J.R.

    1985-01-01

    For some special cases, the use of low energy electrons has advantages over the use of gamma-rays or higher energy electrons for the direct irradiation of food. These advantages arise from details of the interaction processes which are responsible for the production of physical, chemical and biological effects. Factors involved include depth of penetration, dose distribution, irradiation geometry, the possible production of radioactivity and costs

  2. Dose distributions in electron irradiated plastic tubing

    International Nuclear Information System (INIS)

    Miller, A.; Pederson, W.B.

    1981-01-01

    Plastic tubes have been crosslinked by irradiation at a 10 MeV linear electron accelerator and at a 400 keV DC electron accelerator at different irradiation geometries. The diameter of the different tubes was 20, 33 and 110 millimeters. Dose distributions have been measured with thin radiochromic dye films, indicating that in all cases irradiation from two sides is a necessary and sufficient condition for obtaining a satisfactory dose distribution. (author)

  3. Research Progress and Development of Sapphire Fiber Sensor

    Directory of Open Access Journals (Sweden)

    Guochang ZHAO

    2014-07-01

    Full Text Available Sapphire fiber thermometers have become a new potential option in the field of high-temperature measurements. Recent research progress of sapphire fiber sensors is summarized; operational principles, advantages, disadvantages, and applications of sapphire fiber sensors are introduced. Research has shown that sapphire fiber sensors can be used to accurately measure very high temperatures in harsh environments and has been widely applied in fields such as aviation, metallurgy, the chemical industry, energy, and other high temperature measurement areas. Sapphire optical fiber temperature measurement technology will move toward miniaturization, intelligence following the advances in materials, micro-fabrication and communication technologies.

  4. Effect of electron beam irradiation on seed germination

    Energy Technology Data Exchange (ETDEWEB)

    Han, Seunghee; Bae, Youngmin [Changwon Univ., Changwon (Korea, Republic of)

    2013-07-01

    Effect of electron beam irradiation on seed germination was investigated in this research. Electron beam of 0.5, 1.0, 1.5 and 2.0 kGy was irradiated to the seeds of lettuce, green onion and cucumber, and the irradiated seeds were incubated at 25 .deg. Cn Nitsch medium solidified with 0.2% Phytagel. Germination percentage and the length of the sprouts were determined after 72 hours. Germination percentage of lettuce seeds was greatly reduced by the irradiation, and that of the green onion and cucumber were moderately reduced or unchanged by the irradiation. Although average length of the lettuce sprouts was reduced severely, that of the green onion and cucumber was unchanged or moderately reduced. Conclusively, electron beam irradiation might be a useful way of disinfecting some plant seeds including green onion and cucumber.

  5. Effect of electron beam irradiation on seed germination

    International Nuclear Information System (INIS)

    Han, Seunghee; Bae, Youngmin

    2013-01-01

    Effect of electron beam irradiation on seed germination was investigated in this research. Electron beam of 0.5, 1.0, 1.5 and 2.0 kGy was irradiated to the seeds of lettuce, green onion and cucumber, and the irradiated seeds were incubated at 25 .deg. Cn Nitsch medium solidified with 0.2% Phytagel. Germination percentage and the length of the sprouts were determined after 72 hours. Germination percentage of lettuce seeds was greatly reduced by the irradiation, and that of the green onion and cucumber were moderately reduced or unchanged by the irradiation. Although average length of the lettuce sprouts was reduced severely, that of the green onion and cucumber was unchanged or moderately reduced. Conclusively, electron beam irradiation might be a useful way of disinfecting some plant seeds including green onion and cucumber

  6. Formation of Au nanoparticles in sapphire by using Ar ion implantation and thermal annealing

    International Nuclear Information System (INIS)

    Zhou, L.H.; Zhang, C.H.; Yang, Y.T.; Li, B.S.; Zhang, L.Q.; Fu, Y.C.; Zhang, H.H.

    2009-01-01

    In this paper, we present results of the synthesis of gold nanoclusters in sapphire, using Ar ion implantation and annealing in air. Unlike the conventional method of Au implantation followed by thermal annealing, Au was deposited on the surface of m- and a- cut sapphire single crystal samples including those pre-implanted with Ar ions. Au atoms were brought into the substrate by subsequent implantation of Ar ions to form Au nanoparticles. Samples were finally annealed stepwisely in air at temperatures ranging from 400 to 800 deg. C and then studied using UV-vis absorption spectrometry, transmission electron microscopy and Rutherford backscattered spectrometry. Evidence of the formation Au nanoparticles in the sapphire can be obtained from the characteristic surface plasmon resonance (SPR) absorption band in the optical absorption spectra or directly from the transmission electron microscopy. The results of optical absorption spectra indicate that the specimen orientations and pre-implantation also influence the size and the volume fraction of Au nanoparticles formed. Theoretical calculations using Maxwell-Garnett effective medium theory supply a good interpretation of the optical absorption results.

  7. Facet Appearance on the Lateral Face of Sapphire Single-Crystal Fibers during LHPG Growth

    Directory of Open Access Journals (Sweden)

    Liudmila D. Iskhakova

    2016-08-01

    Full Text Available Results of the study of the lateral surface of single-crystal (SC sapphire fibers grown along crystallographic directions [ 0001 ] and [ 11 2 ¯ 0 ] by the LHPG method are presented. The appearance or absence of faceting of the lateral surface of the fibers depending on the growth direction is analyzed. The crystallographic orientation of the facets is investigated. The microstructure of the samples is investigated with the help of an optical microscope and a JSM-5910LV scanning electronic microscope (JEOL. The crystallographic orientations of the facets on the SC sapphire fiber surface are determined by electron backscatter diffraction (EBSD. The seed orientation is studied by means of XRD techniques.

  8. User Support of Electron Irradiation Facility

    International Nuclear Information System (INIS)

    Park, S. H.; Cha, H. K.; Lee, B. C.

    2007-06-01

    The KAERI (Korean Atomic Energy Research Institute) high-power electron beam irradiation facility, operating at the energies between 0.3 MeV and 10 MeV,has provided irradiation services to users in industries, universities, and institutes via 'Project of utilization and cooperation of users of a large research facility' since 2004. A great attraction of many researchers, almost 750 persons so far according to surveys, to e-beam irradiation technology as well as the growth of participants on Workshop on Electron Beam Applications from 121 to 176 indicate the increase of demands of irradiation service. Comparing to the cases of advanced nations in this area, such as America, Japan, China, and Russia, Korea is relatively much behind in radiation technology. It is mainly due to the lack of governmental supports and investments. Active support and investment on construction and operation of electron beam user facilities would be principal factors on developments of advanced technologies. In this project, we would like to satisfy users' requests by developing the effective managing and operating system for prompt services, processes, and QA and to ultimately assist users to create additional new results, by maximizing the utilization of all available resources and activating the developments of technologies of electron beam processing

  9. Spectroscopy of electron irradiated polymers in electron microscope

    International Nuclear Information System (INIS)

    Faraj, S.H.; Salih, S.M.

    1981-01-01

    The damage induced by energetic electrons in the course of irradiation of polymers in a transmission electron microscope was investigated spectroscopically. Damage on the molecular level has been detected at very low exposure doses. These effects have been induced by electron doses less than that received by the specimen when it is situated at its usual place of the specimen stage in the electron microscope by a factor of 1,000. (author)

  10. Towards rhombohedral SiGe epitaxy on 150mm c-plane sapphire substrates

    Science.gov (United States)

    Duzik, Adam J.; Park, Yeonjoon; Choi, Sang H.

    2015-04-01

    Previous work demonstrated for the first time the ability to epitaxially grow uniform single crystal diamond cubic SiGe (111) films on trigonal sapphire (0001) substrates. While SiGe (111) forms two possible crystallographic twins on sapphire (0001), films consisting primarily of one twin were produced on up to 99.95% of the total wafer area. This permits new bandgap engineering possibilities and improved group IV based devices that can exploit the higher carrier mobility in Ge compared to Si. Models are proposed on the epitaxy of such dissimilar crystal structures based on the energetic favorability of crystallographic twins and surface reconstructions. This new method permits Ge (111) on sapphire (0001) epitaxy, rendering Ge an economically feasible replacement for Si in some applications, including higher efficiency Si/Ge/Si quantum well solar cells. Epitaxial SiGe films on sapphire showed a 280% increase in electron mobility and a 500% increase in hole mobility over single crystal Si. Moreover, Ge possesses a wider bandgap for solar spectrum conversion than Si, while the transparent sapphire substrate permits an inverted device structure, increasing the total efficiency to an estimated 30-40%, much higher than traditional Si solar cells. Hall Effect mobility measurements of the Ge layer in the Si/Ge/Si quantum well structure were performed to demonstrate the advantage in carrier mobility over a pure Si solar cell. Another application comes in the use of microelectromechanical devices technology, where high-resistivity Si is currently used as a substrate. Sapphire is a more resistive substrate and offers better performance via lower parasitic capacitance and higher film carrier mobility over the current Si-based technology.

  11. Using electron irradiation to probe iron-based superconductors

    Science.gov (United States)

    Cho, Kyuil; Kończykowski, M.; Teknowijoyo, S.; Tanatar, M. A.; Prozorov, R.

    2018-06-01

    High-energy electron irradiation at low temperatures is an efficient and controlled way to create vacancy–interstitial Frenkel pairs in a crystal lattice, thereby inducing nonmagnetic point-like scattering centers. In combination with London penetration depth and resistivity measurements, the electron irradiation was used as a phase-sensitive probe to study the superconducting order parameter in iron-based superconductors (FeSCs), lending strong support to sign-changing s ± pairing. Here, we review the key results of the effect of electron irradiation in FeSCs.

  12. Electron irradiation induced nanocrystal formation in Cu-borosilicate glass

    Energy Technology Data Exchange (ETDEWEB)

    Sabri, Mohammed Mohammed; Möbus, Günter, E-mail: g.moebus@sheffield.ac.uk [University of Sheffield, Department of Materials Science and Engineering (United Kingdom)

    2016-03-15

    Nanoscale writing of Cu nanoparticles in glasses is introduced using focused electron irradiation by transmission electron microscopy. Two types of copper borosilicate glasses, one with high and another with low Cu loading, have been tested at energies of 200–300 keV, and formation of Cu nanoparticles in a variety of shapes and sizes using different irradiation conditions is achieved. Electron energy loss spectroscopy analysis, combined with high-resolution transmission electron microscopy imaging, confirmed the irradiation-induced precipitated nanoparticles as metallic, while furnace annealing of the glass triggered dendrite-shaped particles of copper oxide. Unusual patterns of nanoparticle rings and chains under focused electron beam irradiation are also presented. Conclusively, electron beam patterning of Cu-loaded glasses is a promising alternative route to well-established femtosecond laser photoreduction of Cu ions in glass.

  13. Precipitation in Ni-Si during electron and ion irradiation

    Science.gov (United States)

    Lucas, G. E.; Zama, T.; Ishino, S.

    1986-11-01

    This study was undertaken to further investigate how the nature of the irradiation condition affects precipitation in a dilute Ni-Si system. Transmission electron microscopy (TEM) discs of a solution annealed Ni alloy containing 5 at% Si were irradiated with 400 keV Ar + ions, 200 keV He + ions and 1 MeV electrons at average displacement rates in the range 2 × 10 -5dpa/s to 2 × 10 -3dpa/s at temperatures in the range 25°C to 450°C. Samples irradiated with electrons were observed in situ in an HVEM, while ion irradiated specimens were examined in a TEM after irradiation. Precipitation of Ni 3Si was detected by the appearance of superlattice spots in the electron diffraction patterns. It was found that as the mass of the irradiating species increased, the lower bound temperature at which Ni 3Si precipitation was first observed increased. For electron irradiation, the lower bound temperature at 2 × 10 -3dpa/s was ˜125°C, whereas for 400 keV Ar + irradiation at a similar average displacement rate the lower boundary was approximately 325°C. This suggests that cascade disordering competes with radiation induced solute segregation.

  14. Precipitation in Ni-Si during electron and ion irradiation

    International Nuclear Information System (INIS)

    Lucas, G.E.; Zama, T.; Ishino, S.

    1986-01-01

    This study was undertaken to further investigate how the nature of the irradiation condition affects precipitation in a dilute Ni-Si system. Transmission electron microscopy (TEM) discs of a solution annealed Ni alloy containing 5 at% Si were irradiated with 400 keV Ar + ions, 200 keV He + ions and 1 MeV electrons at average displacement rates in the range 2x10 -5 dpa/s to 2x10 -3 dpa/s at temperatures in the range 25 0 C to 450 0 C. Samples irradiated with electrons were observed in situ in an HVEM, while ion irradiated specimens were examined in a TEM after irradiation. Precipitation of Ni 3 Si was detected by the appearance of superlattice spots in the electron diffraction patterns. It was found that as the mass of the irradiating species increased, the lower bound temperature at which Ni 3 Si precipitation was first observed increased. For electron irradiation, the lower bound temperature at 2x10 -3 dpa/s was ∝125 0 C, whereas for 400 keV Ar + irradiation at a similar average displacement rate the lower boundary was approximately 325 0 C. This suggests that cascade disordering competes with radiation induced solute segregation. (orig.)

  15. Simulation model for electron irradiated IGZO thin film transistors

    Science.gov (United States)

    Dayananda, G. K.; Shantharama Rai, C.; Jayarama, A.; Kim, Hyun Jae

    2018-02-01

    An efficient drain current simulation model for the electron irradiation effect on the electrical parameters of amorphous In-Ga-Zn-O (IGZO) thin-film transistors is developed. The model is developed based on the specifications such as gate capacitance, channel length, channel width, flat band voltage etc. Electrical parameters of un-irradiated IGZO samples were simulated and compared with the experimental parameters and 1 kGy electron irradiated parameters. The effect of electron irradiation on the IGZO sample was analysed by developing a mathematical model.

  16. In situ transmission electron microscope studies of ion irradiation-induced and irradiation-enhanced phase changes

    International Nuclear Information System (INIS)

    Allen, C.W.

    1992-01-01

    Motivated at least initially by materials needs for nuclear reactor development, extensive irradiation effects studies employing transmission electron microscopes (TEM) have been performed for several decades, involving irradiation-induced and irradiation-enhanced microstructural changes, including phase transformations such as precipitation, dissolution, crystallization, amorphization, and order-disorder phenomena. From the introduction of commercial high voltage electron microscopes (HVEM) in the mid-1960s, studies of electron irradiation effects have constituted a major aspect of HVEM application in materials science. For irradiation effects studies two additional developments have had particularly significant impact; the development of TEM specimen holder sin which specimen temperature can be controlled in the range 10-2200 K and the interfacing of ion accelerators which allows in situ TEM studies of irradiation effects and the ion beam modification of materials within this broad temperature range. This paper treats several aspects of in situ studies of electron and ion beam-induced and enhanced phase changes and presents two case studies involving in situ experiments performed in an HVEM to illustrate the strategies of such an approach of the materials research of irradiation effects

  17. N-polar GaN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor formed on sapphire substrate with minimal step bunching

    Science.gov (United States)

    Prasertsuk, Kiattiwut; Tanikawa, Tomoyuki; Kimura, Takeshi; Kuboya, Shigeyuki; Suemitsu, Tetsuya; Matsuoka, Takashi

    2018-01-01

    The metal-insulator-semiconductor (MIS) gate N-polar GaN/AlGaN/GaN high-electron-mobility transistor (HEMT) on a (0001) sapphire substrate, which can be expected to operate with lower on-resistance and more easily work on the pinch-off operation than an N-polar AlGaN/GaN HEMT, was fabricated. For suppressing the step bunching and hillocks peculiar in the N-polar growth, a sapphire substrate with an off-cut angle as small as 0.8° was introduced and an N-polar GaN/AlGaN/GaN HEMT without the step bunching was firstly obtained by optimizing the growth conditions. The previously reported anisotropy of transconductance related to the step was eliminated. The pinch-off operation was also realized. These results indicate that this device is promising.

  18. Neutron Transmission of Single-crystal Sapphire Filters

    Science.gov (United States)

    Adib, M.; Kilany, M.; Habib, N.; Fathallah, M.

    2005-05-01

    An additive formula is given that permits the calculation of the nuclear capture, thermal diffuse and Bragg scattering cross-sections as a function of sapphire temperature and crystal parameters. We have developed a computer program that allows calculations of the thermal neutron transmission for the sapphire rhombohedral structure and its equivalent trigonal structure. The calculated total cross-section values and effective attenuation coefficient for single-crystalline sapphire at different temperatures are compared with measured values. Overall agreement is indicated between the formula and experimental data. We discuss the use of sapphire single crystal as a thermal neutron filter in terms of the optimum cystal thickness, mosaic spread, temperature, cutting plane and tuning for efficient transmission of thermal-reactor neutrons.

  19. Optical and electrical phenomena in dielectric materials under irradiation

    CERN Document Server

    Plaksin, O A; Stepanov, P A; Demenkov, P V; Chernov, V M; Krutskikh, A O

    2002-01-01

    Optical and acoustic properties of the materials based on Al sub 2 O sub 3 , SiO sub 2 and BN under 8 MeV proton irradiation (<10 sup 4 Gy/s) have been measured. Electric charge partitioning has been shown to result in charging the microscopic regions in the bulk of the dielectrics under irradiation, which is due to different mobility of free electrons and holes (sapphire), concentration inhomogeneity in the system of charge carrier traps (alumina), or thermodynamic instability of the homogeneous distribution of the filled traps (silica glasses). Prevalent charge carrier recombination in the grain boundaries causes re-crystallization of pyrolytic boron nitride under irradiation, which shows up as simultaneous decrease of the intensity of radiation-induced luminescence (RIL) of the centres in the grain boundaries and the BN. The local charging results in optical inhomogeneity of the silica glasses which is sustained by the optical loss spectra of the irradiated glasses, features of kinetics of bleaching, RI...

  20. Silver nanoparticles: synthesis and size control by electron irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Bogle, K A; Dhole, S D; Bhoraskar, V N [Microtron Accelerator Laboratory, Department of Physics, University of Pune, Pune-411007 (India)

    2006-07-14

    Silver nanoparticles were synthesized by irradiating solutions, prepared by mixing AgNO{sub 3} and poly-vinyl alcohol (PVA), with 6 MeV electrons. The electron-irradiated solutions and the thin coatings cast from them were characterized using the ultraviolet-visible (UV-vis), x-ray diffraction (XRD), transmission electron microscopy (TEM) and scanning electron microscopy (SEM) techniques. During electron irradiation, the process of formation of the silver nanoparticles appeared to be initiated at an electron fluence of {approx}2 x 10{sup 13} e cm{sup -2}. This was evidenced from the solution, which turned yellow and exhibited the characteristic plasmon absorption peak around 455 nm. Silver nanoparticles of different sizes in the range 60-10 nm, with a narrow size distribution, could be synthesized by varying the electron fluence from 2 x 10{sup 13} to 3 x 10{sup 15} e cm{sup -2}. Silver nanoparticles of sizes in the range 100-200 nm were also synthesized by irradiating an aqueous AgNO{sub 3} solution with 6 MeV electrons.

  1. Neutron transmission of single-crystal sapphire filters

    International Nuclear Information System (INIS)

    Adib, M.; Kilany, M.; Habib, N.; Fathallah, M.

    2005-01-01

    An additive formula is given that permits the calculation of the nuclear capture, thermal diffuse and Bragg scattering cross-sections as a function of sapphire temperature and crystal parameters. We have developed a computer program that allows calculations of the thermal neutron transmission for the sapphire rhombohedral structure and its equivalent trigonal structure. The calculated total cross-section values and effective attenuation coefficient for single-crystalline sapphire at different temperatures are compared with measured values. Overall agreement is indicated between the formula fits and experimental data. We discuss the use of sapphire single crystal as a thermal neutron filter in terms of the optimum crystal thickness, mosaic spread, temperature, cutting plane and tuning for efficient transmission of thermal-reactor neutrons. (author)

  2. Neutron transmission of single-crystal sapphire filters

    International Nuclear Information System (INIS)

    Adib, M.; Kilany, M.; Habib, N.; Fathallah, M.

    2004-01-01

    A simple additive formula is given that permits the calculation of the nuclear capture, thermal diffuse and Bragg scattering cross-sections as a function of sapphire temperature and crystal parameters. We have developed a computer program that allows calculations of the thermal neutron transmission for the sapphire rhombohedral structure and its equivalent trigonal structure. The calculated total cross-section values and effective attenuation coefficient for mono-crystalline sapphire at different temperatures are compared with measured values. Overall agreement is indicated between the formula fits and experimental data. We discuss the use of sapphire single-crystal as a thermal neutron filter in terms of the optimum crystal thickness, mosaic spread, temperature, cutting plane and tuning for efficient transmission of thermal-reactor neutrons

  3. Strengthening of Poly Methyl Methacrylate (PMMA) through Electron Irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Yoo, Sung Ho; Lim, Hyung San; Ha, Jun Mok; Cho, Sung Oh [KAIST, Daejeon (Korea, Republic of)

    2015-05-15

    Poly Methyl Methacrylate (PMMA) was previously known to show the deteriorating mechanical properties when irradiated with electrons. This is true for low electron irradiation does, but it was found, through experimentation, that at high irradiation dose, PMMA demonstrates improved mechanical properties. With enough electron irradiation dose, the scissions can form new links amongst one another to achieve stability that surpasses that of the PMMA in pre-irradiation treatment state. With higher irradiation dosage and beam strength, hardness of irradiated PMMA could be increased to a much greater extent. Electrons with 50keV of energy can only penetrate around 30 μm of PMMA, thus increasing the beam energy could potentially allow for hardening of not just the surface of the PMMA samples, but the whole samples themselves. Furthermore, Pencil Hardness Test is a method to roughly analyze a material's hardness and does not provide an accurate feedback on the mechanical properties of the material of interest. Hence, a more thorough and effective method of measuring data from the use of equipment such as IZOD Impact Tester, Strain-Stress Tester and Haze Meter will be utilized in the future.

  4. Properties of the generation of radiation in the near infrared part of the spectrum with a sapphire crystal laser having radiation-induced color centers

    International Nuclear Information System (INIS)

    Voitovich, A.P.; Grinkevich, V.E.; Kononov, V.A.; Kromskii, G.I.

    1986-01-01

    This paper investigates the spectral stability of the color centers in sapphire and the energy of lasers in which the active elements were colored with various techniques. Color centers were produced by neutron irradiation. The absorption spectra of the color centers are shown. The transformation of the spectra shows that the mutual conversions of color centers takes place during the thermal annealing of the sapphire; most of the color centers formed have luminescence. Generation or radiation with a tunable frequency was obtained in the case of transverse or quasi-longitudinal excitation by a ruby laser. The results show that ways for increasing the stability of the energy generated by a sapphire laser with color centers can be found

  5. AECL IMPELA electron beam industrial irradiators

    International Nuclear Information System (INIS)

    Labrie, J.P.; Drewell, N.H.; Ebrahim, N.A.; Lawrence, C.B.; Mason, V.A.; Ungrin, J.; White, B.F.

    1989-01-01

    A family of industrial irradiators is being developed by AECL to cover an electron-beam energy range from 5 to 18 MeV at beam powers between 20 and 250 kW. The IMPELA family of irradiators is designed for push button, reliable operation. The major irradiator components are modular, allowing for later upgrades to meet increased demands in either electron or X-ray mode. Interface between the control system, irradiator availability and dose quality assurance is in conformance with the most demanding specifications. The IMPELA irradiators use a klystron-driven, standing-wave, L-band accelerator structure with direct injection from a rugged, triode electron gun. Direct control of the accelerating field during the beam pulse ensures constant output beam energy, independent of beam power. The first member of the family, the IMPELA 10/50 (10 MeV, 50 kW), is in the final stages of assembly at Chalk River Nuclear Laboratories. The IMPELA 10/50 is constructed around a 3.25 m long, high-power-capacity accelerator structure operated at a duty factor of 5%. Beam loading exceeds 60%. The rf power is provided by a 2 MW/150 kW modulated-anode klystron protected from load mismatches by a circulator. This prototype will be used to demonstrate the reliability and dose uniformity targets of the IMPELA family. Full beam operation of the IMPELA 10/50 is scheduled for early 1989. (orig.)

  6. Corrosion of electron-irradiated Zr-2.5Nb and Zircaloy-2

    International Nuclear Information System (INIS)

    Woo, O.-T.; McDougall, G.M.; Hutcheon, R.M.; Urbanic, V.F.; Griffiths, M.; Coleman, C.E.

    2000-01-01

    We used 10-MeV electrons to rapidly produce radiation damage in zirconium alloys, investigated whether electrons produced the same microstructural changes as neutrons, then performed post-irradiation corrosion tests to determine whether electron-irradiated materials displayed similar corrosion behavior to neutron-irradiated materials. Two irradiations were completed using 10-MeV electrons with the beam normal to thin disks of material of 4 diameter slightly larger than the beam. The beam distribution. and disk cooling were designed to produce radial temperature and dose distributions having maxima at the disk center. A high-temperature irradiation was performed on annealed Zr-2.5Nb disks, achieving a central dose of 1.3 dpa and at a central temperature of ∼450 deg C. After irradiation, the samples contained needle-like β-Nb precipitates in the α-Zr matrix similar to those produced by neutrons. A low-temperature irradiation was performed on half-moon disks of Zr-2.5Nb and Zircaloy-2 pressure tube materials at 310 deg C central temperature and 1.3-dpa central dose. Dislocation loops were observed, again similar to those produced in neutron-irradiated materials. Some of the high-temperature electron-irradiated disks were exposed to 300 deg C moist air (saturated with D 2 O), and in separate tests, high- and low-temperature irradiated disks were corroded in 300 deg C D 2 0 (11.0 pD at room temperature) in an autoclave. Measurements of oxide thickness by Fourier Transform Infrared Reflectance (FTIR) spectroscopy showed that electron irradiation reduced the corrosion rate of Zr-2.5Nb compared with that of unirradiated material, as observed for neutron irradiation. For exposures to moist air and to D 2 O, the theoretical deuterium uptakes for the electron-irradiated materials were, respectively, about 4 times and 1.5 to 2 times those for the unirradiated materials. This is also in good agreement with results for neutron-irradiated pressure tube materials. Thus, 10-Me

  7. Reduced cost and improved figure of sapphire optical components

    Science.gov (United States)

    Walters, Mark; Bartlett, Kevin; Brophy, Matthew R.; DeGroote Nelson, Jessica; Medicus, Kate

    2015-10-01

    Sapphire presents many challenges to optical manufacturers due to its high hardness and anisotropic properties. Long lead times and high prices are the typical result of such challenges. The cost of even a simple 'grind and shine' process can be prohibitive. The high precision surfaces required by optical sensor applications further exacerbate the challenge of processing sapphire thereby increasing cost further. Optimax has demonstrated a production process for such windows that delivers over 50% time reduction as compared to traditional manufacturing processes for sapphire, while producing windows with less than 1/5 wave rms figure error. Optimax's sapphire production process achieves significant improvement in cost by implementation of a controlled grinding process to present the best possible surface to the polishing equipment. Following the grinding process is a polishing process taking advantage of chemical interactions between slurry and substrate to deliver excellent removal rates and surface finish. Through experiments, the mechanics of the polishing process were also optimized to produce excellent optical figure. In addition to reducing the cost of producing large sapphire sensor windows, the grinding and polishing technology Optimax has developed aids in producing spherical sapphire components to better figure quality. In addition to reducing the cost of producing large sapphire sensor windows, the grinding and polishing technology Optimax has developed aids in producing spherical sapphire components to better figure quality. Through specially developed polishing slurries, the peak-to-valley figure error of spherical sapphire parts is reduced by over 80%.

  8. Interfacial structure of V2AlC thin films deposited on (112-bar 0)-sapphire

    International Nuclear Information System (INIS)

    Sigumonrong, Darwin P.; Zhang, Jie; Zhou, Yanchun; Music, Denis; Emmerlich, Jens; Mayer, Joachim; Schneider, Jochen M.

    2011-01-01

    Local epitaxy between V 2 AlC and sapphire without intentionally or spontaneously formed seed layers was observed by transmission electron microscopy. Our ab initio calculations suggest that the most stable interfacial structure is characterized by the stacking sequence ...C-V-Al-V//O-Al..., exhibiting the largest work of separation for the configurations studied and hence strong interfacial bonding. It is proposed that a small misfit accompanied by strong interfacial bonding enable the local epitaxial growth of V 2 AlC on (112-bar 0)-sapphire.

  9. Influence of high energy electron irradiation and gamma irradiation on the osmotic resistance of human erythrocyte membranes

    International Nuclear Information System (INIS)

    Catana, D.; Hategan, Alina; Moraru, Rodica; Popescu, Alina; Morariu, V. V.

    1998-01-01

    The effects of 5 MeV electrons and of gamma irradiation at 0 deg. C on the osmotic fragility of human erythrocyte membranes are presented. Both electron and gamma radiation in the range 0-400 Gy induced no hemolysis indicating that the membrane modifications due to radiation interaction do not reach a critical point as to cause swelling of the cells and subsequent lysis. The osmotic stress experiments performed after irradiation showed that the gamma irradiated erythrocytes exhibited an almost similar sigmoidal behavior for all irradiation doses, whereas the electron irradiated samples showed a much larger increase in hemolysis degree and, in the case of a given electron dose (100 Gy), the hemolysis was found much smaller than for the control sample (a similar behavior of the erythrocytes was found in the case of microwave irradiation at temperatures under 0 deg. C). Our experimental data suggest that electron radiation and gamma radiation have different impacts on the erythrocyte membrane fluidity, involving, probably, the different rate of energy deposition in the samples and the direct interaction of electrons with the erythrocyte membranes. (authors)

  10. Elemental process of amorphization induced by electron irradiation in Si

    International Nuclear Information System (INIS)

    Yamasaki, Jun; Takeda, Seiji; Tsuda, Kenji

    2002-01-01

    We recently found that amorphization is induced in Si by electron irradiation. Examining the amorphization systematically, we have established the diagram of steady states under electron irradiation, either amorphous Si (a-Si) or crystalline Si (c-Si) as a function of incident electron energy, electron dose, and irradiation temperature. Utilizing transmission electron microscopy, electron energy filtered diffraction and electron energy-loss spectroscopy, we have characterized the atomic structure, the electronic structure, and the thermal stability of a-Si induced by electron irradiation. Based on the experimental data, we have also concluded that the amorphization is caused by the accumulation of not point defects but small cascade damages. Analyzing the change in the intensity of halo diffraction rings during amorphization, we have clarified that the smallest cascade damage that contributes to amorphization includes only about four Si atoms. This presumably supports the amorphization mechanism that four self-interstitial atoms form the quasistable structure I4 in c-Si and it becomes an amorphous embryo

  11. Transfer-free graphene synthesis on sapphire by catalyst metal agglomeration technique and demonstration of top-gate field-effect transistors

    International Nuclear Information System (INIS)

    Miyoshi, Makoto; Arima, Yukinori; Kubo, Toshiharu; Egawa, Takashi; Mizuno, Masaya; Soga, Tetsuo

    2015-01-01

    Transfer-free graphene synthesis was performed on sapphire substrates by using the catalyst metal agglomeration technique, and the graphene film quality was compared to that synthesized on sputtered SiO 2 /Si substrates. Raman scattering measurements indicated that the graphene film on sapphire has better structural qualities than that on sputtered SiO 2 /Si substrates. The cross-sectional transmission microscopic study also revealed that the film flatness was drastically improved by using sapphire substrates instead of sputtered SiO 2 /Si substrates. These quality improvements seemed to be due the chemical and thermal stabilities of sapphire. Top-gate field-effect transistors were fabricated using the graphene films on sapphire, and it was confirmed that their drain current can be modulated with applied gate voltages. The maximum field-effect mobilities were estimated to be 720 cm 2 /V s for electrons and 880 cm 2 /V s for holes, respectively

  12. Transfer-free graphene synthesis on sapphire by catalyst metal agglomeration technique and demonstration of top-gate field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Miyoshi, Makoto, E-mail: miyoshi.makoto@nitech.ac.jp; Arima, Yukinori; Kubo, Toshiharu; Egawa, Takashi [Research Center for Nano Device and Advanced Materials, Nagoya Institute of Technology, Nagoya 466-8555 (Japan); Mizuno, Masaya [Research Center for Nano Device and Advanced Materials, Nagoya Institute of Technology, Nagoya 466-8555 (Japan); Department of Frontier Materials, Nagoya Institute of Technology, Nagoya 466-8555 (Japan); Soga, Tetsuo [Department of Frontier Materials, Nagoya Institute of Technology, Nagoya 466-8555 (Japan)

    2015-08-17

    Transfer-free graphene synthesis was performed on sapphire substrates by using the catalyst metal agglomeration technique, and the graphene film quality was compared to that synthesized on sputtered SiO{sub 2}/Si substrates. Raman scattering measurements indicated that the graphene film on sapphire has better structural qualities than that on sputtered SiO{sub 2}/Si substrates. The cross-sectional transmission microscopic study also revealed that the film flatness was drastically improved by using sapphire substrates instead of sputtered SiO{sub 2}/Si substrates. These quality improvements seemed to be due the chemical and thermal stabilities of sapphire. Top-gate field-effect transistors were fabricated using the graphene films on sapphire, and it was confirmed that their drain current can be modulated with applied gate voltages. The maximum field-effect mobilities were estimated to be 720 cm{sup 2}/V s for electrons and 880 cm{sup 2}/V s for holes, respectively.

  13. Electron irradiation effects on lithium peroxide

    Science.gov (United States)

    Kikkawa, Jun; Shiotsuki, Taishi; Shimo, Yusuke; Koshiya, Shogo; Nagai, Takuro; Nito, Takehiro; Kimoto, Koji

    2018-03-01

    In this study, electron irradiation effects on lithium peroxide (Li2O2), which is an important discharge product of Li-air (or Li-O2) batteries, were investigated using selected-area electron diffraction (SAED) and high-energy resolution electron energy-loss spectroscopy (EELS). The results obtained show that Li2O2 to Li2O transformation occurs with 80 and 300 keV incident electrons under high electron dose rates at 20 and -183 °C. The Li2O2 to Li2O transformation rate for 300 keV was 1/5 of that for 80 keV with the irradiation taking place at -183 °C. We also present a series of the EELS spectra that can be used as a criterion to judge the molar ratio of Li2O to Li2O2 in the general systems where Li2O2 and Li2O coexist.

  14. Effects of electron irradiation on LDPE/MWCNT composites

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Jianqun [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Li, Xingji, E-mail: lxj0218@hit.edu.cn [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Liu, Chaoming; Rui, Erming [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Wang, Liqin [School of Mechatronics, Harbin Institute of Technology, Harbin 150001 (China)

    2015-12-15

    In this study, mutiwalled carbon nanotubes (MWCNTs) were incorporated into low density polyethylene (LDPE) in different concentrations (2%, 4% and 8%) using a melt blending process. Structural, thermal stability and tensile property of the unirradiated/irradiated LDPE/MWCNT composites by 110 keV electrons were investigated by means of scanning electron microscopy (SEM), small angle X-ray scattering (SAXS), Raman spectroscopy, electron paramagnetic resonance (EPR) spectroscopy, thermogravimetric analysis (TGA) and uniaxial tensile techniques. Experimental results show that the addition of MWCNTs obviously increases the ultimate tensile strength of LDPE and decreases the elongation at break, which is attributed to the homogeneous distribution of the MWCNTs in LDPE and intense interaction between MWCNTs and LDPE matrix. Also, the electron irradiation further increases the ultimate tensile strength of LDPE/MWCNT composites, which can be ascribed to the more intense interaction between MWCNTs and LDPE matrix, and the formation of crosslinking sites in LDPE matrix induced by the electron irradiation. The addition of MWCNTs significantly enhances thermal stability of the LDPE due to the hindering effect and the scavenging free radicals, while the electron irradiation decreases thermal stability of the LDPE/MWCNT composites since the structure of the MWCNTs and LDPE matrix damages.

  15. Epitactical FeAl films on sapphire and their magnetic properties; Epitaktische FeAl-Filme auf Saphir und ihre magnetischen Eigenschaften

    Energy Technology Data Exchange (ETDEWEB)

    Trautvetter, Moritz

    2011-05-05

    In the presented thesis epitaxial FeAl thin films on sapphire have been prepared by pulse laser deposition (PLD). The thin films deposited at room temperature exhibits ferromagnetism and subsequent annealing is necessary to transform the thin films to paramagnetic B2-phase, where the transition temperature depends on the crystalline orientation of the sapphire substrate. Alternatively, by deposition at higher substrate temperature the B2-phase is obtained directly. However, morphology of the FeAl film is influenced by different growth modes resulting from different substrate temperatures. The paramagnetic FeAl films can then be transformed to ferromagnetic phase by successive ion irradiation. Independent of the ion species used for irradiation, the same universal relation between thin films' coercive fields and irradiation damage is identified. The ion irradiation ferromagnetism can be transformed back to paramagnetism by subsequent annealing. The mutual transition between ferromagnetic and paramagnetic phases has been performed several times and shows full reversibility. The ferromagnetic phase induced by Kr{sup +} irradiation exhibits structural relaxation, where the saturate magnetization of FeAl thin film gradually decreases in several days. Later, ion irradiation has been performed selectively on defined areas of the thin film with the help of an unconventional lithography technique. The subsequent thin film is composed of ordered hexagonal array of ferromagnetic nano-cylinders separated by a paramagnetic matrix, suggesting a promising system for magnetic data storage. (orig.)

  16. Electron microscopy of boron carbide before and after electron irradiation

    International Nuclear Information System (INIS)

    Stoto, T.; Zuppiroli, L.; Beauvy, M.; Athanassiadis, T.

    1984-06-01

    The microstructure of boron carbide has been studied by electron microscopy and related to the composition of the material. After electron irradiations in an usual transmission electron microscope and in a high voltage electron microscope at different temperatures and fluxes no change of these microstructures have been observed but a sputtering of the surface of the samples, which has been studied quantitatively [fr

  17. Method of determining the position of an irradiated electron beam

    International Nuclear Information System (INIS)

    Fukuda, Wataru.

    1967-01-01

    The present invention relates to the method of determining the position of a radiated electron beam, in particular, the method of detecting the position of a p-n junction by a novel method when irradiating the electron beam on to the semi-conductor wafer, controlling the position of the electron beam from said junction. When the electron beam is irradiated on to the semi-conductor wafer which possesses the p-n junction, the position of the p-n junction may be ascertained to determine the position of the irradiated electron beam by detecting the electromotive force resulting from said p-n junction with a metal disposed in the proximity of but without mechanical contact with said semi-conductor wafer. Furthermore, as far as a semi-conductor wafer having at least one p-n junction is concerned, the present invention allows said p-n junction to be used to determine the position of an irradiated electron beam. Thus, according to the present invention, the electromotive force of the electron beam resulting from the p-n junction may easily be detected by electrostatic coupling, enabling the position of the irradiated electron beam to be accurately determined. (Masui, R.)

  18. ESR investigataions of electron-beam irradiated cellulose nitrate

    International Nuclear Information System (INIS)

    Chipara, M.I.; Catana, D.; Grecu, V.; Romero, J.R.; Chipara, D.

    1994-01-01

    Electron spin resonance investigations on an electron-beam irradiated solid state nuclear track detector, based on cellulose nitrate (KODAK LR-311) are reported. The nature of free radicals induced in polymers by irradiation is discussed. The dependence of resonance spectral parameters on irradiation times, as well as on storage time and temperature, is studied. The experimental results are related to the stability of latent tracks and its is concluded that the free radicals induced by irradiation are located within the latent tracks. We have shown that both latent track and free radical thermal fading obey an Arrhenius-like dependence, with the same activation energy. (Author)

  19. ESR investigataions of electron-beam irradiated cellulose nitrate

    Energy Technology Data Exchange (ETDEWEB)

    Chipara, M.I.; Catana, D. [Institute of Atomic Physics, Bucharest (Romania); Grecu, V.; Romero, J.R. [Bucharest Univ. (Romania). Faculty of Physics; Coca, S. [Chemical Research Inst., Bucharest (Romania); Chipara, D. [Research Inst. for Electrotechnics, Bucharest (Romania)

    1994-10-01

    Electron spin resonance investigations on an electron-beam irradiated solid state nuclear track detector, based on cellulose nitrate (KODAK LR-311) are reported. The nature of free radicals induced in polymers by irradiation is discussed. The dependence of resonance spectral parameters on irradiation times, as well as on storage time and temperature, is studied. The experimental results are related to the stability of latent tracks and its is concluded that the free radicals induced by irradiation are located within the latent tracks. We have shown that both latent track and free radical thermal fading obey an Arrhenius-like dependence, with the same activation energy. (Author).

  20. ESR investigations of electron-beam irradiated cellulose nitrate

    International Nuclear Information System (INIS)

    Chipara, M.I.; Grecu, V.; Catana, D.; Romero, J.R.; Coca, S.; Chipara, M.D.

    1994-01-01

    Electron spin resonance investigations on an electron-beam irradiated solid state nuclear track detector, based on cellulose nitrate (KODAK LR-311), are reported. The nature of free radicals induced in polymers by irradiation is discussed. The dependence of resonance spectral parameters on irradiation times, as well as on storage time and temperature, is studied. The experimental results are related to the stability of latent tracks and it is concluded that the free radicals induced by irradiation are located within the latent tracks. We have shown that both latent track and free radical thermal fading obey an Arrhenius-like dependence, with the same activation energy. (Author)

  1. Corrosion of electron-irradiated Zr-2.5Nb and Zircaloy-2

    Energy Technology Data Exchange (ETDEWEB)

    Woo, O.-T.; McDougall, G.M.; Hutcheon, R.M.; Urbanic, V.F.; Griffiths, M.; Coleman, C.E

    2000-07-01

    We used 10-MeV electrons to rapidly produce radiation damage in zirconium alloys, investigated whether electrons produced the same microstructural changes as neutrons, then performed post-irradiation corrosion tests to determine whether electron-irradiated materials displayed similar corrosion behavior to neutron-irradiated materials. Two irradiations were completed using 10-MeV electrons with the beam normal to thin disks of material of 4 diameter slightly larger than the beam. The beam distribution. and disk cooling were designed to produce radial temperature and dose distributions having maxima at the disk center. A high-temperature irradiation was performed on annealed Zr-2.5Nb disks, achieving a central dose of 1.3 dpa and at a central temperature of {approx}450 deg C. After irradiation, the samples contained needle-like {beta}-Nb precipitates in the {alpha}-Zr matrix similar to those produced by neutrons. A low-temperature irradiation was performed on half-moon disks of Zr-2.5Nb and Zircaloy-2 pressure tube materials at 310 deg C central temperature and 1.3-dpa central dose. Dislocation loops were observed, again similar to those produced in neutron-irradiated materials. Some of the high-temperature electron-irradiated disks were exposed to 300 deg C moist air (saturated with D{sub 2}O), and in separate tests, high- and low-temperature irradiated disks were corroded in 300 deg C D{sub 2}0 (11.0 pD at room temperature) in an autoclave. Measurements of oxide thickness by Fourier Transform Infrared Reflectance (FTIR) spectroscopy showed that electron irradiation reduced the corrosion rate of Zr-2.5Nb compared with that of unirradiated material, as observed for neutron irradiation. For exposures to moist air and to D{sub 2}O, the theoretical deuterium uptakes for the electron-irradiated materials were, respectively, about 4 times and 1.5 to 2 times those for the unirradiated materials. This is also in good agreement with results for neutron-irradiated pressure

  2. Polymerization of vinyl stearate multilayers by electron beam irradiation

    International Nuclear Information System (INIS)

    Nishii, Masanobu; Hatada, Motoyoshi

    1975-01-01

    Studies on the radiation-induced polymerization of vinyl stearate (VST) multilayers were carried out. The VST multilayers built-up on an aluminum plated glass plate by Langmuir-Blodgett technique were irradiated with electron beams from a Van de Graaff electron accelerator in nitrogen atmosphere. The structure of the multilayers and the effects of irradiation were investigated by X-ray diffractometry, contact angle measurement, multireflection infrared spectroscopy, and scanning electron microscopy. The VST multilayers became insoluble to methanol by the irradiation, and the multi-reflection infrared spectrum of the VST multilayers turned into that of poly (VST) with increasing dosage. The polymerization proceeded during the irradiation at the temperature range between -10 0 and 10 0 C, and the conversion attained to 90% within 2.5 minutes (total dose, 5.6 Mrads). The multilayers irradiated above 13 Mrads turned into the polymer film insoluble to benzene, indicating that the polymer chains were cross-linked by the irradiation. Stearic acid which was formed by the irradiation of VST at nitrogen-water interface as a hydrolysis product was not detected in this system. (auth.)

  3. The application analysis of high energy electron accelerator in food irradiation processing

    International Nuclear Information System (INIS)

    Deng Wenmin; Chen Hao; Feng Lei; Zhang Yaqun; Chen Xun; Li Wenjun; Xiang Chengfen; Pei Ying; Wang Zhidong

    2012-01-01

    Irradiation technology of high energy electron accelerator has been highly concerned in food processing industry with its fast development, especially in the field of food irradiation processing. In this paper, equipment and research situation of high energy electron accelerator were collected, meanwhile, the similarities and differences between high energy electron beam and 60 Co γ-rays were discussed. In order to provide more references of high energy electron beam irradiation, the usages of high energy electron in food irradiation processing was prospected. These information would promote the development of domestic food irradiation industry and give a useful message to irradiation enterprises and researchers. (authors)

  4. Changing in tool steels wear resistance under electron irradiation

    International Nuclear Information System (INIS)

    Braginskaya, A.E.; Manin, V.N.; Makedonskij, A.V.; Mel'nikova, N.A.; Pakchanin, L.M.; Petrenko, P.V.

    1983-01-01

    The tool steels and alloys wear resistance under dry friction after electron irradiation has been studied. Electron irradiation of a wide variety of steels is shown to increase wear resistance. In this case phase composition and lattice parameters changes are observed both in matrix and carbides. The conclusion is drawn that an appreciable increase of steel wear resistance under electron irradiation can be explained both by carbide phase volume gain and changes in it's composition and the formation of carbide phase submicroscopic heterogeneities and, possibly, complexes of defects

  5. MCNPX calculations for electron irradiated semiconductor detectors

    International Nuclear Information System (INIS)

    Sedlackova, K.; Necas, V.; Sagatova, A.; Zatko, B.

    2014-01-01

    This study aimed to treat some practical problems of (not only) semiconductor material irradiation by high energy electron beam using MCNPX simulation code. The relation between the absorbed dose and the fluency was found and the energy distribution of electron flux density was simulated on the top and back side of 270 μm thick GaAs, SiC and Si detectors. Furthermore, the dose depth profiles were calculated for GaAs, SiC and Si materials irradiated by 4 and 5 MeV electron beams. For the GaAs detector, a very good agreement with the experiment was shown. To match the absolute values of the absorbed dose with experimentally obtained values, the electron source emissivity has to be determined in relation to the electron beam setting parameters. (authors)

  6. Electron beam irradiation of gemstone for color enhancement

    Science.gov (United States)

    Idris, Sarada; Ghazali, Zulkafli; Hashim, Siti A'iasah; Ahmad, Shamshad; Jusoh, Mohd Suhaimi

    2012-09-01

    Numerous treatment of gemstones has been going on for hundreds of years for enhancing color and clarity of gems devoid of these attributes. Whereas previous practices included fraudulent or otherwise processes to achieve the color enhancement, the ionizing radiation has proven to be a reliable and reproducible technique. Three types of irradiation processes include exposure to gamma radiation, electron beam irradiation and the nuclear power plants. Electron Beam Irradiation of Gemstone is a technique in which a gemstone is exposed to highly ionizing radiation electron beam to knock off electrons to generate color centers culminating in introduction of deeper colors. The color centers may be stable or unstable. Below 9MeV, normally no radioactivity is introduced in the exposed gems. A study was conducted at Electron Beam Irradiation Centre (Alurtron) for gemstone color enhancement by using different kind of precious gemstones obtained from Pakistan. The study shows that EB irradiation not only enhances the color but can also improves the clarity of some type of gemstones. The treated stones included kunzite, tourmaline, topaz, quartz, aquamarine and cultured pearls. Doses ranging from 25 kGy to 200 KGy were employed to assess the influence of doses on color and clarity and to select the optimum doses. The samples used included both the natural and the faceted gemstones. It is concluded that significant revenue generation is associated with the enhancement of the color in clarity of gemstones which are available at very cheap price in the world market.

  7. Electron beam irradiation of gemstone for color enhancement

    Energy Technology Data Exchange (ETDEWEB)

    Idris, Sarada; Ghazali, Zulkafli; Hashim, Siti A' iasah; Ahmad, Shamshad; Jusoh, Mohd Suhaimi [Malaysian Nuclear Agency, Bangi, Selangor (Malaysia); School of Chemicals and Material Engineering, NUST Islamabad (Pakistan); Malaysian Nuclear Agency, Bangi, Selangor (Malaysia)

    2012-09-26

    Numerous treatment of gemstones has been going on for hundreds of years for enhancing color and clarity of gems devoid of these attributes. Whereas previous practices included fraudulent or otherwise processes to achieve the color enhancement, the ionizing radiation has proven to be a reliable and reproducible technique. Three types of irradiation processes include exposure to gamma radiation, electron beam irradiation and the nuclear power plants. Electron Beam Irradiation of Gemstone is a technique in which a gemstone is exposed to highly ionizing radiation electron beam to knock off electrons to generate color centers culminating in introduction of deeper colors. The color centers may be stable or unstable. Below 9MeV, normally no radioactivity is introduced in the exposed gems. A study was conducted at Electron Beam Irradiation Centre (Alurtron) for gemstone color enhancement by using different kind of precious gemstones obtained from Pakistan. The study shows that EB irradiation not only enhances the color but can also improves the clarity of some type of gemstones. The treated stones included kunzite, tourmaline, topaz, quartz, aquamarine and cultured pearls. Doses ranging from 25 kGy to 200 KGy were employed to assess the influence of doses on color and clarity and to select the optimum doses. The samples used included both the natural and the faceted gemstones. It is concluded that significant revenue generation is associated with the enhancement of the color in clarity of gemstones which are available at very cheap price in the world market.

  8. Electron beam irradiation of gemstone for color enhancement

    International Nuclear Information System (INIS)

    Idris, Sarada; Ghazali, Zulkafli; Hashim, Siti A'iasah; Ahmad, Shamshad; Jusoh, Mohd Suhaimi

    2012-01-01

    Numerous treatment of gemstones has been going on for hundreds of years for enhancing color and clarity of gems devoid of these attributes. Whereas previous practices included fraudulent or otherwise processes to achieve the color enhancement, the ionizing radiation has proven to be a reliable and reproducible technique. Three types of irradiation processes include exposure to gamma radiation, electron beam irradiation and the nuclear power plants. Electron Beam Irradiation of Gemstone is a technique in which a gemstone is exposed to highly ionizing radiation electron beam to knock off electrons to generate color centers culminating in introduction of deeper colors. The color centers may be stable or unstable. Below 9MeV, normally no radioactivity is introduced in the exposed gems. A study was conducted at Electron Beam Irradiation Centre (Alurtron) for gemstone color enhancement by using different kind of precious gemstones obtained from Pakistan. The study shows that EB irradiation not only enhances the color but can also improves the clarity of some type of gemstones. The treated stones included kunzite, tourmaline, topaz, quartz, aquamarine and cultured pearls. Doses ranging from 25 kGy to 200 KGy were employed to assess the influence of doses on color and clarity and to select the optimum doses. The samples used included both the natural and the faceted gemstones. It is concluded that significant revenue generation is associated with the enhancement of the color in clarity of gemstones which are available at very cheap price in the world market.

  9. Sapphire: A kinking nonlinear elastic solid

    Science.gov (United States)

    Basu, S.; Barsoum, M. W.; Kalidindi, S. R.

    2006-03-01

    Kinking nonlinear elastic (KNE) solids are a recently identified large class of solids that deform fully reversibly by the formation of dislocation-based kink bands [Barsoum et al. Phys. Rev. Lett. 92, 255508 (2004)]. We further conjectured that a high c/a ratio-that ensures that only basal slip is operative-is a sufficient condition for a solid to be KNE. The c/a ratio of sapphire is 2.73 and thus, if our conjecture is correct, it should be a KNE solid. Herein by repeatedly loading-up to 30 times-the same location of sapphire single crystals of two orientations-A and C-with a 1 μm radius spherical nanoindenter, followed by atomic force microscopy, we showed that sapphire is indeed a KNE solid. After pop-ins of the order of 100 nm, the repeated loadings give rise to fully reversible, reproducible hysteresis loops wherein the energy dissipated per unit volume per cycle Wd is of the order of 0.5 GJ/m3. Wd is due to the back and fro motion of the dislocations making up the incipient kink bands that are fully reversible. The results presented here strongly suggest that-like in graphite and mica-kink bands play a more critical role in the room temperature constrained deformation of sapphire than had hitherto been appreciated. Our interpretation is also in agreement with, and can explain most, recent nanoindentation results on sapphire.

  10. A permanent magnet electron beam spread system used for a low energy electron irradiation accelerator

    International Nuclear Information System (INIS)

    Huang Jiang; Xiong Yongqian; Chen Dezhi; Liu Kaifeng; Yang Jun; Li Dong; Yu Tiaoqin; Fan Mingwu; Yang Bo

    2014-01-01

    The development of irradiation processing industry brings about various types of irradiation objects and expands the irradiation requirements for better uniformity and larger areas. This paper proposes an innovative design of a permanent magnet electron beam spread system. By clarifying its operation principles, the author verifies the feasibility of its application in irradiation accelerators for industrial use with the examples of its application in electron accelerators with energy ranging from 300 keV to 1 MeV. Based on the finite element analyses of electromagnetic fields and the charged particle dynamics, the author also conducts a simulation of electron dynamics in magnetic field on a computer. The results indicate that compared with the traditional electron beam scanning system, this system boosts the advantages of a larger spread area, non-power supply, simple structure and low cost, etc., which means it is not only suitable for the irradiation of objects with the shape of tubes, strips and panels, but can also achieve a desirable irradiation performance on irregular constructed objects of large size. (authors)

  11. Comparison of electron beam and gamma irradiation for the sterilization of allograft

    International Nuclear Information System (INIS)

    Jong il Choi; Nak Yun Sung; Hee Sub Lee; Jae Hun Kim; Myung Woo Byun; Ju Woon Lee

    2008-01-01

    Full text: For human use, it is necessary to sterilize the allograft in order to reduce the risk of infections and associated complications. In this study, we compared the effects of electron beam and gamma irradiation for the sterilization of the demineralized bone matrix (DBM) in a carboxymethylcellulose (CMC) carrier with regard to the physiological and osteoinductive properties. The CMC carrier was irradiated at the various doses. and the viscosity of the irradiated CMC was measured. The viscosity of the CMC irradiated with electron beam was higher than that with gamma ray. Also, the addition of vitamin C as the radical scavenger and irradiation at -70 degree C were shown to be effective in preventing the degradation of CMC by the irradiation. To investigate the effect of irradiation on the osteoinduction of DBM, alkaline phosphatase (ALP) activity with C2C12 cells was measured. The ALP activity of DBM in CMC was higher when irradiated with the electron beam compared with the gamma ray. The bone morphogenetic proteins (BMP) were extracted from DBM irradiated with electron beam and gamma ray, and it was found that the extraction efficiency of BMP was higher from DBM irradiated with the electron beam. This was reasoned for the higher APL activity of the electron beam irradiated DBM. With the advantages of electron beam such as short processing time, in-line processing, and low equipment cost, these results suggest that electron beam irradiation is recommendable for the sterilization of DBM allograft. (Author)

  12. Detection of beryllium treatment of natural sapphires by NRA

    Energy Technology Data Exchange (ETDEWEB)

    Gutierrez, P.C., E-mail: carolina.gutierrez@uam.e [Centro de Micro-Analisis de Materiales (CMAM), Universidad Autonoma de Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Ynsa, M.-D.; Climent-Font, A. [Centro de Micro-Analisis de Materiales (CMAM), Universidad Autonoma de Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Dpto. Fisica Aplicada C-12, Universidad Autonoma de Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Calligaro, T. [Centre de Recherche et de Restauration des musees de France C2RMF, CNRS-UMR171, 14 quai Francois Mitterrand, 75001 Paris (France)

    2010-06-15

    Since the 1990's, artificial treatment of natural sapphires (Al{sub 2}O{sub 3} crystals coloured by impurities) by diffusion of beryllium at high temperature has become a growing practice. This process permits to enhance the colour of these gemstones, and thus to increase their value. Detection of such a treatment - diffusion of tens of {mu}g/g of beryllium in Al{sub 2}O{sub 3} crystals - is usually achieved using high sensitivity techniques like laser-ablation inductively coupled plasma mass spectrometry (LA-ICP/MS) or laser-induced breakdown spectrometry (LIBS) which are unfortunately micro-destructive (leaving 50-100-{mu}m diameter craters on the gems). The simple and non-destructive alternative method proposed in this work is based on the nuclear reaction {sup 9}Be({alpha}, n{gamma}){sup 12}C with an external helium ion beam impinging on the gem directly placed in air. The 4439 keV prompt {gamma}-ray tagging Be atoms are detected with a high efficiency bismuth germanate scintillator. Beam dose is monitored using the 2235 keV prompt {gamma}-ray produced during irradiation by the aluminium of the sapphire matrix through the {sup 27}Al({alpha}, p{gamma}){sup 30}Si nuclear reaction. The method is tested on a series of Be-treated sapphires previously analyzed by LA-ICP/MS to determine the optimal conditions to obtain a peak to background appropriate to reach the required {mu}g/g sensitivity. Using a 2.8-MeV external He beam and a beam dose of 200 {mu}C, beryllium concentrations from 5 to 16 {mu}g/g have been measured in the samples, with a detection limit of 1 {mu}g/g.

  13. Emission from Crystals Irradiated with a Beam of Runaway Electrons

    Science.gov (United States)

    Buranchenko, A. G.; Tarasenko, V. F.; Beloplotov, D. V.; Baksht, E. Kh.

    2018-01-01

    An investigation of the spectral and amplitude-temporal characteristics of emission from different crystals, promising in terms of their application as detectors of runaway electrons, is performed. This emission is excited by subnanosecond electron beams generated in a gas diode. It is found out that at the electron energies of tens-hundreds of kiloelectronvolts, the main contribution into the emission from CsI, ZnS, type IIa artificial and natural diamonds, sapphire, CaF2, ZrO2, Ga2O3, CaCO3, CdS, and ZnSe crystals comes from the cathodoluminescence; the radiation pulse duration depends on the crystal used and sufficiently exceeds the Cherenkov radiation pulse duration. It is demonstrated that the latter radiation exhibits low intensity and can be detected in the short-wave region of the spectrum in the cases where a monochromator and a high-sensitivity photomultiplier tube (PMT) are used.

  14. Comparison of stress states in GaN films grown on different substrates: Langasite, sapphire and silicon

    Science.gov (United States)

    Park, Byung-Guon; Saravana Kumar, R.; Moon, Mee-Lim; Kim, Moon-Deock; Kang, Tae-Won; Yang, Woo-Chul; Kim, Song-Gang

    2015-09-01

    We demonstrate the evolution of GaN films on novel langasite (LGS) substrate by plasma-assisted molecular beam epitaxy, and assessed the quality of grown GaN film by comparing the experimental results obtained using LGS, sapphire and silicon (Si) substrates. To study the substrate effect, X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy and photoluminescence (PL) spectra were used to characterize the microstructure and stress states in GaN films. Wet etching of GaN films in KOH solution revealed that the films deposited on GaN/LGS, AlN/sapphire and AlN/Si substrates possess Ga-polarity, while the film deposited on GaN/sapphire possess N-polarity. XRD, Raman and PL analysis demonstrated that a compressive stress exist in the films grown on GaN/LGS, AlN/sapphire, and GaN/sapphire substrates, while a tensile stress appears on AlN/Si substrate. Comparative analysis showed the growth of nearly stress-free GaN films on LGS substrate due to the very small lattice mismatch ( 3.2%) and thermal expansion coefficient difference ( 7.5%). The results presented here will hopefully provide a new framework for the further development of high performance III-nitride-related devices using GaN/LGS heteroepitaxy.

  15. Response of zircon to electron and Ne+ irradiation

    International Nuclear Information System (INIS)

    Devanathan, R.; Weber, W.J.; Boatner, L.A.

    1997-01-01

    Zircon (ZrSiO 4 ) is an actinide host phase in vitreous ceramic nuclear waste forms and a potential host phase for the disposition of excess weapons plutonium. In the present work, the effects of 800 and 900 keV electron and 1 MeV Ne + irradiations on the structure of single crystals of ZrSiO 4 have been investigated. The microstructural evolution during the irradiations was studied in situ using a high-voltage electron microscope interfaced to an ion accelerator at Argonne National Laboratory. The results indicate that electron irradiation at 15 K cannot amorphize ZrSiO 4 even at fluences an order of magnitude higher than that required for amorphization by 1.5 MeV Kr + ions. However, the material is readily amorphized by 1 MeV Ne + irradiation at 15 K. The temperature dependence of this amorphization is discussed in light of previous studies of radiation damage in ZrSiO 4

  16. Structure of the Dislocation in Sapphire

    DEFF Research Database (Denmark)

    Bilde-Sørensen, Jørgen; Thölen, A. R.; Gooch, D. J.

    1976-01-01

    Experimental evidence of the existence of 01 0 dislocations in the {2 0} prism planes in sapphire has been obtained by transmission electron microscopy. By the weak-beam technique it has been shown that the 01 0 dislocations may dissociate into three partials. The partials all have a Burgers vector...... of ⅓ 01 0 and are separated by two identical faults. The distance between two partials is in the range 75-135 Å, corresponding to a fault energy of 320±60 mJ/m2. Perfect 01 0 dislocations have also been observed. These dislocations exhibited either one or two peaks when imaged in the (03 0) reflection...

  17. Recovery of electron irradiated V-Ga alloys

    International Nuclear Information System (INIS)

    Leguey, T.; Monge, M.; Pareja, R.; Hodgson, E.R.

    2000-01-01

    The recovery characteristics of electron-irradiated V-Ga alloys with 1.2 and 4.6 at.% Ga have been investigated by positron annihilation spectroscopy (PAS). It is found that vacancies created by electron irradiation become mobile in these alloys at ∼293 K. This temperature is noticeably lower than that in pure V and V-Ti alloys. The vacancies aggregate into microvoids in V-4.6Ga, but do not in V-1.2Ga. The results indicate that vacancies are bound to Ga-interstitial impurity pairs

  18. Electron beam irradiation effect on GaN HEMT

    International Nuclear Information System (INIS)

    Lou Yinhong; Guo Hongxia; Zhang Keying; Wang Yuanming; Zhang Fengqi

    2011-01-01

    In this work, GaN HEMTs (High Electron Mobility Transistor) were irradiated by 0.8 and 1.2 MeV electron beams, and the irradiation effects were investigated. The results show that the device damage caused by 0.8 MeV electrons is more serious than that by 1.2 MeV electrons. Saturation drain current increase and threshold voltage negative shift are due to trapped positive charge from ionization in the AlGaN layer and N, Ga vacancy from non-ionizing energy loss in the GaN layer. Electron traps and trapped positive charges from non-ionizing in the AlGaN layer act as trap-assisted-tunneling centers that increase the gate leakage current.(authors)

  19. γ-irradiation effect on electronic properties in hydrogenated amorphous silicon

    International Nuclear Information System (INIS)

    Shirafuji, J.; Nagata, S.; Shirakawa, K.

    1986-01-01

    γ-irradiation effect on electron transport and photoelectric properties in glow-discharge hydrogenated amorphous silicon is investigated mainly by means of time-of-flight measurement. Although the electron transport changes from non-dispersive to dispersive when the total dose on γ-rays is increased, the electron mobility at room temperature is affected only slightly by γ-irradiation. The γ-irradiation introduces dominantly Si dangling bonds, allowing to study the recombination characteristic as a function of dangling bond density under controllable conditions. It is found that the electron recombination lifetime is inversely proportional to the dangling bond density. (author)

  20. Effect of electron beam irradiation on nutritional ingredient of Tegillarca granosa meat

    International Nuclear Information System (INIS)

    Li Chao; Yang Wenge; Xu Dalun; Ou Changrong; Shi Huidong

    2011-01-01

    The influences of 0, 1, 3, 5, 7 and 9 kGy electron beam irradiation on the contents of protein and amino acid and the composition of amino acids and fatty acids in Tegillarca granosa meat were investigated. The results showed that the electron beam had no significant effect on contents of moisture, ash and protein. Fat was sensitive to electron beam irradiation, which decreased with the increasing of irradiation dose. The composition of amino acids remained stable with different doses. The values of EAA/TAA and EAA/NEAA were kept in accordance with FAO/WHO protein model. Besides, electron beam irradiation made no effect on the limiting amino acid (the first and second limiting amino acids were Met + Cys and Val, respectively). The relative content of PUFA increased significantly 1 ∼ 7 kGy irradiation. Electron beam irradiation produced a notable impact on the essential fatty acid, induced the increase of linoleic acid, linolenic acid and arachidonic acid at the doses of 5 ∼ 9 kGy. After the irradiation of 9 kGy, the increments of relative contents of the three essential fatty acids reached 94.61%, 41.37% and 89.91%, respectively. Electron beam irradiation had positive effect on EPA with the doses of 3, 5 and 9 kGy. However, DHA was sensitive to electron beam irradiation, whose relative content decreased with the increasing of irradiation dose and undetected at the dose of 9 kGy. According to the research of decontamination effect, the recommended dose of electron beam irradiation on Tegillarca granosa ws fixed at 3 ∼ 5 kGy. (authors)

  1. Radiation defects in electron-irradiated InP crystals

    International Nuclear Information System (INIS)

    Brailovskii, E.Yu.; Karapetyan, F.K.; Megela, I.G.; Tartachnik, V.P.

    1982-01-01

    The results are presented of formation and annealing of defects in InP crystals at 1 to 50 MeV electron irradiation. The recovery of electrical properties in the range of 77 to 970 K during annealing processes is studied. Five low temperature annealing states in n-InP and the reverse annealing in p-InP are observed at 77 to 300 K. Four annealing stages at temperatures higher than 300 K are present. When the electron energy is increased more complicated thermostable defects are formed, and at 50 MeV electron energy besides of the point defect clusters are formed, which anneal at temperatures of 800 to 970 K. It is shown that the peculiarities of the Hall mobility at irradiation and annealing are caused by the scattering centres E/sub c/ - 0.2 eV. The 'limiting' position of the Fermi level in electron irradiated InP crystals is discussed. (author)

  2. Radiation defects in electron-irradiated InP crystals

    Energy Technology Data Exchange (ETDEWEB)

    Brailovskii, E.Yu.; Karapetyan, F.K.; Megela, I.G.; Tartachnik, V.P. (AN Ukrainskoj SSR, Kiev. Inst. Yadernykh Issledovanij)

    1982-06-16

    The results are presented of formation and annealing of defects in InP crystals at 1 to 50 MeV electron irradiation. The recovery of electrical properties in the range of 77 to 970 K during annealing processes is studied. Five low temperature annealing states in n-InP and the reverse annealing in p-InP are observed at 77 to 300 K. Four annealing stages at temperatures higher than 300 K are present. When the electron energy is increased more complicated thermostable defects are formed, and at 50 MeV electron energy besides of the point defect clusters are formed, which anneal at temperatures of 800 to 970 K. It is shown that the peculiarities of the Hall mobility at irradiation and annealing are caused by the scattering centres E/sub c/ - 0.2 eV. The 'limiting' position of the Fermi level in electron irradiated InP crystals is discussed.

  3. Electron irradiation of dry food products

    Energy Technology Data Exchange (ETDEWEB)

    Gruenewald, Th [Bundesbahn-Zentralamt, Minden (Germany, F.R.)

    1983-01-01

    The interest of the industrial food producer is increasing in having the irradiation facility installed in the food processing chain. The throughput of the irradiator should be high and the residence time of the product in the facility should be short. These conditions can be accomplished by electron irradiators. To clarify the irradiation conditions spices taken out of the industrial process, food grade salt, sugar, and gums as models of dry food products were irradiated. With a radiation dose of 10 kGy microbial load can be reduced on 10**4 microorganisms/g. The sensory properties of the spices were not changed in an atypical way. For food grade salt and sugar changes of colour were observed which are due to lattice defects or initiated browning. The irradiation of several gums led only in some cases to an improvement of the thickness properties in the application below 50 deg C, in most cases the thickness effect was reduced. The products were packaged before irradiation. But it would be possible also to irradiate the products without packaging moving the product through the irradiation field in a closed conveyor system.

  4. Electron irradiation of dry food products

    International Nuclear Information System (INIS)

    Gruenewald, Th.

    1983-01-01

    The interest of the industrial food producer is increasing in having the irradiation facility installed in the food processing chain. The throughput of the irradiator should be high and the residence time of the product in the facility should be short. These conditions can be accomplished by electron irradiators. To clarify the irradiation conditions spices taken out of the industrial process, food grade salt, sugar, and gums as models of dry food products were irradiated. With a radiation dose of 10 kGy microbial load can be reduced on 10**4 microorganisms/g. The sensory properties of the spices were not changed in an atypical way. For food grade salt and sugar changes of colour were observed which are due to lattice defects or initiated browning. The irradiation of several gums led only in some cases to an improvement of the thickness properties in the application below 50 deg C, in most cases the thickness effect was reduced. The products were packaged before irradiation. But it would be possible also to irradiate the products without packaging moving the product through the irradiation field in a closed conveyor system. (author)

  5. Electron beam irradiation technology for environmental conservation

    International Nuclear Information System (INIS)

    Tokunaga, Okihiro; Arai, Hidehiko; Hashimoto, Shoji

    1992-01-01

    This paper reviews research and development of application of electron beam (EB) irradiation technology for treatment of flue gas and waste water, and for disinfection of sewage sludge. Feasibility studies on EB purification of flue gases have been performed with pilot-scale experiments in Japan, the USA and Germany, and is being carried out in Poland for flue gases from iron-sintering furnaces or coal burning boilers. Based on results obtained by experiments using simulated flue gas, pilot scale test for treatment of flue gas of low-sulfur containing coal combustion has recently started in Japan. Organic pollutants in waste water and ground water have been found to be decomposed by EB irradiation. Synergetic effect of EB irradiation and ozone addition was found to improve the decomposition efficiency. Electron beam irradiation technology for disinfection of water effluent from water treatment plants was found to avoid formation of chlorinated organic compounds which are formed in using chlorine. Efficient process for composting of sewage sludge disinfected by EB irradiation has been developed by small scale and pilot scale experiments. In the new process, disinfection by EB irradiation and composing can be done separately and optimum temperature for composting can be, therefore, selected to minimize period of composting. (author)

  6. Occurrence and elimination of in-plane misoriented crystals in AlN epilayers on sapphire via pre-treatment control

    International Nuclear Information System (INIS)

    Wang Hu; Xiong Hui; Wu Zhi-Hao; Yu Chen-Hui; Tian Yu; Dai Jiang-Nan; Fang Yan-Yan; Zhang Jian-Bao; Chen Chang-Qing

    2014-01-01

    AlN epilayers are grown directly on sapphire (0001) substrates each of which has a low temperature AlN nucleation layer. The effects of pretreatments of sapphire substrates, including exposures to NH 3 /H 2 and to H 2 only ambients at different temperatures, before the growth of AlN epilayers is investigated. In-plane misoriented crystals occur in N-polar AlN epilayers each with pretreatment in a H 2 only ambient, and are characterized by six 60°-apart peaks with splits in each peak in (101-bar 2) phi scan and two sets of hexagonal diffraction patterns taken along the [0001] zone axis in electron diffraction. These misoriented crystals can be eliminated in AlN epilayers by the pretreatment of sapphire substrates in the NH 3 /H 2 ambient. AlN epilayers by the pretreatment of sapphire substrates in the NH 3 /H 2 ambient are Al-polar. Our results show the pretreatments and the nucleation layers are responsible for the polarities of the AlN epilayers. We ascribe these results to the different strain relaxation mechanisms induced by the lattice mismatch of AlN and sapphire. (interdisciplinary physics and related areas of science and technology)

  7. Behaviour of some fresh fruits under electron-beam irradiation

    International Nuclear Information System (INIS)

    Ferdes, O.; Stroia, A.L.; Potcoava, A.; Cojocaru, M.; Mihnea, R.; Oproiu, C.

    1994-01-01

    The use of ionizing radiation in preservation of fruits and vegetables is widely recognized. In this paper it is presented a study of the effect of electron-beam irradiation of some fresh, early and perishable fruits, like strawberries, cherries, and sour cherries concerning their shelf-life time extension. The irradiations were performed on common varieties in normal conditions to the IPTRD's electron-beam accelerator (Bucharest-Magurele) having the following parameters: flow current 10 μA, power 60 W and electron mean energy 6.23 MeV. The irradiation doses varied between 0.5-3.0 kGy and the dose rates between 100-1500 Gy/min. It was observed the fruit preservation capability of the treatment and it was analysed the main characteristics as organoleptic properties, weight of dry component, acidity, total and reducing sugars, ascorbic acid content and others. It was evidenced an increase in freshness and shelf-life extension by 5-7 days for strawberries and up to two weeks for cherries without any significant changes in the values of the considered parameters. Otherwise, for the applied doses, the electron-beam irradiation did not produce any significant changes in the values of fruit characteristic parameters. The results lead to the conclusion that the electron-beam irradiation is a good technological solution for fresh fruit processing. (Author) 1 Tab., 7 Refs

  8. The effect of simultaneous electron and Kr+ irradiation on amorphization of CuTi

    International Nuclear Information System (INIS)

    Koike, J.; Okamoto, P.R.; Rehn, L.E.; Meshii, M.

    1989-01-01

    CuTi was irradiated with 1-MeV electrons and Kr + ions simultaneously at temperatures from 10 to 423 K. Retardation of Kr + -induced amorphization was observed with simultaneous electron irradiation at 295 and 423 K. The retardation effect increased with increasing irradiation temperature and relative electron-to-Kr dose rate. In contrast, simultaneous irradiation below 100 K showed an additive effect of electron- and Kr + -induced amorphization. The results can be explained by the mobility point defects introduced by electron irradiation interacting with Kr + -induced displacement cascades. 6 refs., 6 figs

  9. Characteristics of InGaN-Based Light-Emitting Diodes on Patterned Sapphire Substrates with Various Pattern Heights

    Directory of Open Access Journals (Sweden)

    Sheng-Fu Yu

    2012-01-01

    Full Text Available The optical and electrical characteristics of InGaN-based blue light-emitting diodes (LEDs grown on patterned sapphire substrates (PSSs with different pattern heights and on planar sapphire by atmospheric-pressure metal-organic chemical vapor deposition were investigated. Compared with planar sapphire, it was found that the LED electroluminescence intensity is significantly enhanced on PSSs with pattern heights of 0.5 (21%, 1.1 (57%, 1.5 (81%, and 1.9 (91% μm at an injected current of 20 mA. The increased light intensity exhibits the same trend in a TracePro simulation. In addition, it was also found that the level of leakage current depends on the density of V-shape defects, which were measured by scanning electron microscopy.

  10. 'The future of the electron beam irradiation service business'

    International Nuclear Information System (INIS)

    Yamase, Yutaka

    1998-01-01

    The high energy electron beam has less penetration power in comparison with the gamma ray which has been used from before. However, the dose rate of the electron beam is considerably high in comparison with the gamma ray with more than several thousand times. Therefore, the irradiation of the product can be done in a short time, and there are cheap characteristics further in the irradiation cost as well. And, an electron beam is the technology which is very easy to accept in the country of a nuclear allergy constitution like our country so that it may not use radioactive substance. This time, I'd like to think about the present condition of the electron beam irradiation service business and a future based on the experience of Tsukuba EBcenter until now. (J.P.N.)

  11. Change of the functional properties in polysaccharides irradiated by electron beam

    International Nuclear Information System (INIS)

    Sakaue, Kazushi; Murata, Yoshiyuki; Tada, Mikiro; Hayashi, Toru; Todoriki, Setsuko; Asai, Kazuo

    1998-01-01

    Polysaccharides widely used in the food industry were studied in terms of sterilization of bacteria by irradiation. 12 items of polysaccharides irradiated by electron beam ware investigated for bacteria count and the functional property of pH, gel strength, bloom and viscosity. This study aims to determine the sterilization effect by absorption dose and the applicability of the electron beam irradiation toward polysaccharides. Results shows that 1) Over 5kGy absorption dose are enough to be able to sterilize bacteria in the polysaccharide themselves. 2) We reconfirm that Arabic gum will be applicable for the electron beam irradiation, which has been used in some foreign countries. 3) Electron beam irradiation will be useful for Gellan gum b (acetyl type), as gelling agents in the food application. (author)

  12. Lateral propagation of MeV electrons generated by femtosecond laser irradiation

    International Nuclear Information System (INIS)

    Seely, J. F.; Szabo, C. I.; Audebert, P.; Brambrink, E.; Tabakhoff, E.; Hudson, L. T.

    2010-01-01

    The propagation of MeV electrons generated by intense (≅10 20 W/cm 2 ) femtosecond laser irradiation, in the lateral direction perpendicular to the incident laser beam, was studied using targets consisting of irradiated metal wires and neighboring spectator wires embedded in electrically conductive (aluminum) or resistive (Teflon) substrates. The K shell spectra in the energy range 40-60 keV from wires of Gd, Dy, Hf, and W were recorded by a transmission crystal spectrometer. The spectra were produced by 1s electron ionization in the irradiated wire and by energetic electron propagation through the substrate material to the spectator wire of a different metal. The electron range and energy were determined from the relative K shell emissions from the irradiated and spectator wires separated by varying substrate lateral distances of up to 1 mm. It was found that electron propagation through Teflon was inhibited, compared to aluminum, implying a relatively weak return current and incomplete space-charge neutralization. The energetic electron propagation in the direction parallel to the electric field of the laser beam was larger than perpendicular to the electric field. Energetic electron production was lower when directly irradiating aluminum or Teflon compared to irradiating the heavy metal wires. These experiments are important for the determination of the energetic electron production mechanism and for understanding lateral electron propagation that can be detrimental to fast-ignition fusion and hard x-ray backlighter radiography.

  13. Sterilization of ground spices by electron beams irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Hashigiwa, Masayuki; Nakachi, Ayako; Kobayashi, Hiroshi [K. Kobayashi and Co., Ltd., Kako, Hyogo (Japan)

    1999-09-01

    Each ground spice (Black Pepper, Turmeric, Ginger, Paprika and Basil), which was packaged into polyethylene film, was irradiated by electron beams at 5 different levels: 2, 4, 6, 8 and 10 kGy. Bacteriological tests for total bacterial count were carried out on spices before and after irradiation, but the tests for microfiora were carried out only before irradiation. Total bacterial count decreased in proportion to the level of electron beams. But the decreasing rate for Turmeric, Ginger and Basil was lower compared with that of other spices. The reason seems that rate of contamination by B. pumilus, which is thought as radiation resistant bacteria, was higher on these spices. (author)

  14. Sterilization of ground spices by electron beams irradiation

    International Nuclear Information System (INIS)

    Hashigiwa, Masayuki; Nakachi, Ayako; Kobayashi, Hiroshi

    1999-01-01

    Each ground spice (Black Pepper, Turmeric, Ginger, Paprika and Basil), which was packaged into polyethylene film, was irradiated by electron beams at 5 different levels: 2, 4, 6, 8 and 10 kGy. Bacteriological tests for total bacterial count were carried out on spices before and after irradiation, but the tests for microfiora were carried out only before irradiation. Total bacterial count decreased in proportion to the level of electron beams. But the decreasing rate for Turmeric, Ginger and Basil was lower compared with that of other spices. The reason seems that rate of contamination by B. pumilus, which is thought as radiation resistant bacteria, was higher on these spices. (author)

  15. Bending of metal-filled carbon nanotube under electron beam irradiation

    Directory of Open Access Journals (Sweden)

    Abha Misra

    2012-03-01

    Full Text Available Electron beam irradiation induced, bending of Iron filled, multiwalled carbon nanotubes is reported. Bending of both the carbon nanotube and the Iron contained within the core was achieved using two approaches with the aid of a high resolution electron microscope (HRTEM. In the first approach, bending of the nanotube structure results in response to the irradiation of a pristine kink defect site, while in the second approach, disordered sites induce bending by focusing the electron beam on the graphite walls. The HRTEM based in situ observations demonstrate the potential for using electron beam irradiation to investigate and manipulate the physical properties of confined nanoscale structures.

  16. On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Voronenkov, V. V. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Virko, M. V.; Kogotkov, V. S.; Leonidov, A. A. [Peter the Great St. Petersburg Polytechnic University (Russian Federation); Pinchuk, A. V.; Zubrilov, A. S.; Gorbunov, R. I.; Latishev, F. E.; Bochkareva, N. I.; Lelikov, Y. S.; Tarkhin, D. V.; Smirnov, A. N.; Davydov, V. Y. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Sheremet, I. A. [Financial University under the Government of the Russian Federation (Russian Federation); Shreter, Y. G., E-mail: y.shreter@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2017-01-15

    The intense absorption of CO{sub 2} laser radiation in sapphire is used to separate GaN films from GaN templates on sapphire. Scanning of the sapphire substrate by the laser leads to the thermal dissociation of GaN at the GaN/sapphire interface and to the detachment of GaN films from the sapphire. The threshold density of the laser energy at which n-GaN started to dissociate is 1.6 ± 0.5 J/cm{sup 2}. The mechanical-stress distribution and the surface morphology of GaN films and sapphire substrates before and after laser lift-off are studied by Raman spectroscopy, atomic-force microscopy, and scanning electron microscopy. A vertical Schottky diode with a forward current density of 100 A/cm{sup 2} at a voltage of 2 V and a maximum reverse voltage of 150 V is fabricated on the basis of a 9-μm-thick detached n-GaN film.

  17. Amorphization kinetics of Zr3Fe under electron irradiation

    International Nuclear Information System (INIS)

    Motta, A.T.; Howe, L.M.; Okamoto, P.R.

    1992-10-01

    0.9 MeV electron irradiations were performed at 28--220 K in a high-voltage electron microscope (HVEM). By measuring onset, spread and final size of the amorphous region, factoring in the Guassian distribution of the beam, a kinetic description of the amorphization in terms of dose, dose rate and temperature was obtained. The critical temperature for amorphization by electron irradiation was found to be ∼220 K, compared to 570--625 K for 40 Ar ion irradiation. Also, the dose-to-amorphization increased exponentially with temperature. Results indicated that the rate of growth of the amorphous region under the electron beam decreased with increasing temperature and the does-to-amorphization decreased with increasing dose rate. The size of the amorphous region saturated after a region dose, the final size decreasing with increasing temperature, and it was argued that this is related to the existence of a critical dose rate, which increased with temperature, below which no amorphization occurred. The above observations can be understood in the framework of the kinetics of damage accumulation under irradiation

  18. Positron annihilation and electron spin resonance studies of defects in electron-irradiated 3C-SiC

    International Nuclear Information System (INIS)

    Itoh, Hisayoshi; Yoshikawa, Masahito; Tanigawa, Shoichiro; Nashiyama, Isamu; Misawa, Shunji; Okumura, Hajime; Yoshida, Sadafumi.

    1992-01-01

    Defects induced by 1 MeV electron-irradiation in cubic silicon carbide (3C-SiC) epitaxially grown by chemical vapor deposition have been studied with positron annihilation and electron spin resonance (ESR). Doppler broadened energy spectra of annihilation γ-rays obtained by using variable-energy positron beams showed the formation of vacancy-type defects in 3C-SiC by the electron-irradiation. An ESR spectrum labeled Tl, which has an isotropic g-value of 2.0029 ± 0.001, was observed in electron-irradiated 3C-SiC. The Tl spectrum is interpreted by hyperfine interactions of paramagnetic electrons with 13 C at four carbon sites and 29 Si at twelve silicon sites, indicating that the Tl center arises from a point defect at a silicon site. Both the results can be accounted for by the introduction of isolated Si vacancies by the irradiation. (author)

  19. On the threshold of damage formation in aluminum oxide via electronic excitations

    International Nuclear Information System (INIS)

    Skuratov, V.A.; O’Connell, J.; Kirilkin, N.S.; Neethling, J.

    2014-01-01

    This work is aimed to determine the threshold of dense ionization induced damage formation and their morphology in sapphire single crystals irradiated with 1.2 MeV/amu Xe ions. Cross-sectional TEM examination of r-oriented Al 2 O 3 specimens irradiated to fluences of 2 × 10 12 and 2 × 10 13 cm −2 has revealed discontinuous ion tracks visible from the irradiated surface up to a depth of 7.6 ± 0.1 μm. According to the SRIM code calculation, the threshold electronic stopping power for track formation in Al 2 O 3 is within the range 9.8 ÷ 10.5 keV/nm. This value agrees with those predicted by both inelastic and analytical thermal spike models

  20. Interfacial thermal resistance between high-density polyethylene (HDPE) and sapphire

    International Nuclear Information System (INIS)

    Zheng Kun; Ma Yong-Mei; Wang Fo-Song; Zhu Jie; Tang Da-Wei

    2014-01-01

    To improve the thermal conductivity of polymeric composites, the numerous interfacial thermal resistance (ITR) inside is usually considered as a bottle neck, but the direct measurement of the ITR is hardly reported. In this paper, a sandwich structure which consists of transducer/high density polyethylene (HDPE)/sapphire is prepared to study the interface characteristics. Then, the ITRs between HDPE and sapphire of two samples with different HDPE thickness values are measured by time-domain thermoreflectance (TDTR) method and the results are ∼ 2 × 10 −7 m 2 ·K·W −1 . Furthermore, a model is used to evaluate the importance of ITR for the thermal conductivity of composites. The model's analysis indicates that reducing the ITR is an effective way of improving the thermal conductivity of composites. These results will provide valuable guidance for the design and manufacture of polymer-based thermally conductive materials. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  1. Irradiation-related amorphization and crystallization: In situ transmission electron microscope studies

    International Nuclear Information System (INIS)

    Allen, C.W.

    1994-01-01

    Interfacing an ion accelerator to a transmission electron microscope (TEM) allows the analytical functions of TEM imaging and diffraction to be employed during ion-irradiation effects studies. At present there are twelve such installations in Japan, one in France and one in the US. This paper treats several aspects of in situ studies involving electron and ion beam induced and enhanced phase transformations and presents results of several in situ experiments to illustrate the dynamics of this approach in the materials science of irradiation effects. The paper describes the ion- and electron-induced amorphization of CuTi; the ion-irradiation-enhanced transformation of TiCr 2 ; and the ion- and electron-irradiation-enhanced crystallization of CoSi 2

  2. Oleophobic properties of the step-and-terrace sapphire surface

    Energy Technology Data Exchange (ETDEWEB)

    Muslimov, A. E., E-mail: amuslimov@mail.ru; Butashin, A. V.; Kanevsky, V. M. [Russian Academy of Sciences, Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics” (Russian Federation)

    2017-03-15

    Sapphire is widely used in production of optical windows for various devices due to its mechanical and optical properties. However, during operation the surface can be affected by fats, oils, and other organic contaminations. Therefore, it is important to improve the oleophobic properties of sapphire windows. In this study, we investigate the interaction of a supersmooth sapphire surface with oleic acid droplets, which imitate human finger printing. It is established that chemical–mechanical polishing with additional annealing in air, which leads to the formation of an atomically smooth sapphire surface, makes it possible to significantly improve the oleophobic properties of the surface. The results are analyzed using the Ventsel–Deryagin homogeneous wetting model.

  3. Novel phenomena in clusters irradiated by short-wavelength free-electron lasers

    International Nuclear Information System (INIS)

    Fukuzawa, Hironobu; Ueda, Kiyoshi

    2017-01-01

    By electron spectroscopy, we investigated various phenomena that are caused by the irradiation of extreme ultraviolet (EUV) and X-ray free-electron laser (FEL) pulses on rare-gas clusters. The results for the Ne clusters, which were irradiated by EUVFEL pulses at a photon energy of 20.3 eV below the ionization threshold, illustrate that novel interatomic processes yield low-energy electrons. The results for the Xe clusters, irradiated by EUVFEL pulses at a photon energy of 24.3 eV above the threshold, illustrate that nanoplasma is formed as a result of trapping the photoelectrons and consequently emits low-energy thermal electrons. The results for the Ar clusters irradiated by 5 keV XFEL pulses illustrate that nanoplasma is formed by trapping low-energy Auger electrons and secondary electrons in the tens of fs range, and continuous thermal emission from the plasma occurs in the ps range. (author)

  4. Electron spin resonance identification of irradiated fruits

    International Nuclear Information System (INIS)

    Raffi, J.J.; Agnel, J.-P.L.

    1989-01-01

    The electron spin resonance spectrum of achenes, pips, stalks and stones from irradiated fruits (stawberry, raspberry, red currant, bilberry, apple, pear, fig, french prune, kiwi, water-melon and cherry) always displays, just after γ-treatment, a weak triplet (a H ∼30 G) due to a cellulose radical; its left line (lower field) can be used as an identification test of irradiation, at least for strawberries, raspberries, red currants or bilberries irradiated in order to improve their storage time. (author)

  5. Defect studies in electron-irradiated ZnO and GaN

    International Nuclear Information System (INIS)

    Tuomisto, F.; Look, D.C.; Farlow, G.C.

    2007-01-01

    We present experimental results obtained with positron annihilation spectroscopy in room-temperature electron-irradiated n-type ZnO and GaN. The cation vacancies act as important compensating centers in 2 MeV electron-irradiated samples, even though their introduction rates are different by 2 orders of magnitude. In addition, negatively charged non-open volume defects that also compensate the n-type conductivity are produced together with the cation vacancies at similar introduction rates. The low introduction rates of compensating defects in ZnO demonstrate the radiation hardness of the material. Isochronal thermal annealings were performed to study the dynamics of the irradiation-induced defects. In 2 MeV electron-irradiated ZnO, all the defects introduced in the irradiation disappear already at 600 K, while 1100 K is needed in GaN. Several separate annealing stages of the defects are observed in both materials, the first at 400 K

  6. Defect studies in electron-irradiated ZnO and GaN

    Energy Technology Data Exchange (ETDEWEB)

    Tuomisto, F. [Laboratory of Physics, Helsinki University of Technology, 02015 TKK Espoo (Finland)], E-mail: filip.tuomisto@tkk.fi; Look, D.C. [Semiconductor Research Center, Wright State University, Dayton, OH 45435 (United States); Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, OH 45433 (United States); Farlow, G.C. [Physics Department, Wright State University, Dayton, OH 45435 (United States)

    2007-12-15

    We present experimental results obtained with positron annihilation spectroscopy in room-temperature electron-irradiated n-type ZnO and GaN. The cation vacancies act as important compensating centers in 2 MeV electron-irradiated samples, even though their introduction rates are different by 2 orders of magnitude. In addition, negatively charged non-open volume defects that also compensate the n-type conductivity are produced together with the cation vacancies at similar introduction rates. The low introduction rates of compensating defects in ZnO demonstrate the radiation hardness of the material. Isochronal thermal annealings were performed to study the dynamics of the irradiation-induced defects. In 2 MeV electron-irradiated ZnO, all the defects introduced in the irradiation disappear already at 600 K, while 1100 K is needed in GaN. Several separate annealing stages of the defects are observed in both materials, the first at 400 K.

  7. Evolution of graphene nanoribbons under low-voltage electron irradiation

    KAUST Repository

    Zhu, Wenpeng

    2012-01-01

    Though the all-semiconducting nature of ultrathin graphene nanoribbons (GNRs) has been demonstrated in field-effect transistors operated at room temperature with ∼105 on-off current ratios, the borderline for the potential of GNRs is still untouched. There remains a great challenge in fabricating even thinner GNRs with precise width, known edge configurations and specified crystallographic orientations. Unparalleled to other methods, low-voltage electron irradiation leads to a continuous reduction in width to a sub-nanometer range until the occurrence of structural instability. The underlying mechanisms have been investigated by the molecular dynamics method herein, combined with in situ aberration-corrected transmission electron microscopy and density functional theory calculations. The structural evolution reveals that the zigzag edges are dynamically more stable than the chiral ones. Preferential bond breaking induces atomic rings and dangling bonds as the initial defects. The defects grow, combine and reconstruct to complex edge structures. Dynamic recovery is enhanced by thermal activation, especially in cooperation with electron irradiation. Roughness develops under irradiation and reaches a plateau less than 1 nm for all edge configurations after longtime exposure. These features render low-voltage electron irradiation an attractive technique in the fabrication of ultrathin GNRs for exploring the ultimate electronic properties. © 2012 The Royal Society of Chemistry.

  8. The electron irradiation effects in different structures of diodes

    International Nuclear Information System (INIS)

    Li Quanfen; Wang Jiaxu

    1993-01-01

    This paper describes the different electron irradiation effects in different structures of diodes and the different results produced by different irradiation ways. From this work, we can know how to choose proper manufacture arts and comprehensive factors according to the structures of diodes and the irradiation conditions

  9. Absorption and luminescence of crystalline quartz under electron nanosecond irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Gritsenko, B P; Lisitsyn, V M; Stepanchuk, V N [Tomskij Politekhnicheskij Inst. (USSR)

    1981-02-01

    The purpose of the study is continuation of investigations of principal regularities of production and destruction of short-lived defects in quartz and accompanying luminescence under electron pulse irradiation. For investigation purposes samples of crystalline synthetic quartz have been used. The irradiation has been performed at 80-400 K temperatures by means of an electron pulse accelerator with parameters: electron flow pulse duration 10 ns, pulse current density up to 1000 A/cm/sup 2/, electron mean energy 200 keV. Temperature-time characteristics of absorption and luminescence spectrum are studied. It has been found that quartz irradiation by electron pulses of nanosecond duration leads to appearance of short-lived bands of optical absorption at 4.1 and 5.15 eV to which by kinetic parameters correspond luminescence bands at 2.6 and 3.1 eV, respectively. The enumerated absorption bands are induced by quartz irradiation independently of the prehistory and phase state of the sample and are caused obviously by intrinsic radiation defects. Possible models of such defects are suggested.

  10. Epitaxial growth of InN on c-plane sapphire by pulsed laser deposition with r.f. nitrogen radical source

    International Nuclear Information System (INIS)

    Ohta, J.; Fujioka, H.; Honke, T.; Oshima, M.

    2004-01-01

    We have grown InN films on c-plane sapphire substrates by pulsed laser deposition (PLD) with a radio frequency nitrogen radical source for the first time and investigated the effect of the substrate surface nitridation on the structural and electrical properties of InN films with reflection high energy electron diffraction (RHEED), atomic force microscope, the Hall effect measurements and high-resolution X-ray diffraction (HRXRD). RHEED and HRXRD characterizations revealed that high-quality InN grows epitaxially on sapphire by PLD and its epitaxial relationship is InN (0 0 0 1) parallel sapphire (0 0 0 1) and InN [2 -1 -1 0] parallel sapphire [1 0 -1 0]. The InN crystalline quality and the electron mobility are improved by the substrate nitridation process. The area of the pits at the InN surface is reduced by the substrate nitridation process probably due to the reduction in the interface energy between InN and the substrate. The full width at half maximum of the -1 -1 2 4 X-ray rocking curve for InN grown by the present technique without using any buffer layers was as small as 34.8 arcmin. These results indicate that the present technique is promising for the growth of the high-quality InN films

  11. Leveraging Python Interoperability Tools to Improve Sapphire's Usability

    Energy Technology Data Exchange (ETDEWEB)

    Gezahegne, A; Love, N S

    2007-12-10

    The Sapphire project at the Center for Applied Scientific Computing (CASC) develops and applies an extensive set of data mining algorithms for the analysis of large data sets. Sapphire's algorithms are currently available as a set of C++ libraries. However many users prefer higher level scripting languages such as Python for their ease of use and flexibility. In this report, we evaluate four interoperability tools for the purpose of wrapping Sapphire's core functionality with Python. Exposing Sapphire's functionality through a Python interface would increase its usability and connect its algorithms to existing Python tools.

  12. Particle-in-cell simulation of electron trajectories and irradiation uniformity in an annular cathode high current pulsed electron beam source

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Wei; Wang, Langping, E-mail: aplpwang@hit.edu.cn; Zhou, Guangxue; Wang, Xiaofeng

    2017-02-01

    Highlights: • The transmission process of electrons and irradiation uniformity was simulated. • Influence of the irradiation parameters on irradiation uniformity are discussed. • High irradiation uniformity can be obtained in a wide processing window. - Abstract: In order to study electron trajectories in an annular cathode high current pulsed electron beam (HCPEB) source based on carbon fiber bunches, the transmission process of electrons emitted from the annular cathode was simulated using a particle-in-cell model with Monte Carlo collisions (PIC-MCC). The simulation results show that the intense flow of the electrons emitted from the annular cathode are expanded during the transmission process, and the uniformity of the electron distribution is improved in the transportation process. The irradiation current decreases with the irradiation distance and the pressure, and increases with the negative voltage. In addition, when the irradiation distance and the cathode voltage are larger than 40 mm and −15 kV, respectively, a uniform irradiation current distribution along the circumference of the anode can be obtained. The simulation results show that good irradiation uniformity of circular components can be achieved by this annular cathode HCPEB source.

  13. Irradiation of Gemstones using Electron Beam

    International Nuclear Information System (INIS)

    Sarada Idris; Mohd Suhaimi Jusoh; Siti Aiasah Hashim

    2011-01-01

    Gemstone irradiation treatment using radiation is one of the studies conducted in the ALURTRON. The purpose of radiation is to study the effects of radiation on the gems. Through studies conducted on freshwater pearls and stones such as Topaz, Kunzite, TOURMALINE, Aquamarine, Quartz and so on, electron beam irradiation method can highlight the jewel colors but also to reduce the effects of haze on gemstones. The dose of radiation used is 25 kGy to 200 kGy. (author)

  14. Sapphire: Canada's Answer to Space-Based Surveillance of Orbital Objects

    Science.gov (United States)

    Maskell, P.; Oram, L.

    The Canadian Department of National Defence is in the process of developing the Canadian Space Surveillance System (CSSS) as the main focus of the Surveillance of Space (SofS) Project. The CSSS consists of two major elements: the Sapphire System and the Sensor System Operations Centre (SSOC). The space segment of the Sapphire System is comprised of the Sapphire Satellite - an autonomous spacecraft with an electro-optical payload which will act as a contributing sensor to the United States (US) Space Surveillance Network (SSN). It will operate in a circular, sunsynchronous orbit at an altitude of approximately 750 kilometers and image a minimum of 360 space objects daily in orbits ranging from 6,000 to 40,000 kilometers in altitude. The ground segment of the Sapphire System is composed of a Spacecraft Control Center (SCC), a Satellite Processing and Scheduling Facility (SPSF), and the Sapphire Simulator. The SPSF will be responsible for data transmission, reception, and processing while the SCC will serve to control and monitor the Sapphire Satellite. Surveillance data will be received from Sapphire through two ground stations. Following processing by the SPSF, the surveillance data will then be forwarded to the SSOC. The SSOC will function as the interface between the Sapphire System and the US Joint Space Operations Center (JSpOC). The JSpOC coordinates input from various sensors around the world, all of which are a part of the SSN. The SSOC will task the Sapphire System daily and provide surveillance data to the JSpOC for correlation with data from other SSN sensors. This will include orbital parameters required to predict future positions of objects to be tracked. The SSOC receives daily tasking instructions from the JSpOC to determine which objects the Sapphire spacecraft is required to observe. The advantage of this space-based sensor over ground-based telescopes is that weather and time of day are not factors affecting observation. Thus, space-based optical

  15. Charging effects of PET under electron beam irradiation in a SEM

    International Nuclear Information System (INIS)

    Jbara, O; Rondot, S; Hadjadj, A; Patat, J M; Fakhfakh, S; Belhaj, M

    2008-01-01

    This paper deals with charge trapping and charge transport of polyethylene terephthalate (PET) polymer subjected to electron irradiation in a scanning electron microscope (SEM). Measurement of displacement current and leakage current using an arrangement adapted to the SEM allows the amount of trapped charge during and after electron irradiation to be determined and the charge mechanisms regulation to be studied. These mechanisms involve several parameters related to the electronic injection, the characteristics of insulator and the effects of the trapped charge itself. The dynamic trapping properties of PET samples are investigated and the time constants of charging are evaluated for various conditions of irradiation. The determination of the trapping cross section for electrons is possible by using the trapping rate at the onset of irradiation. Many physical processes are involved in the charging and discharging mechanisms; among them surface conduction is outlined. Through the control of irradiation conditions, various types of surface discharging (flashover phenomenon) behaviour are also observed. The strength of the electric field initiating surface discharge is estimated.

  16. Electrical properties of irradiated PVA film by using ion/electron beam

    Science.gov (United States)

    Abdelrahman, M. M.; Osman, M.; Hashhash, A.

    2016-02-01

    Ion/electron beam bombardment has shown great potential for improving the surface properties of polymers. Low-energy charged (ion/electron) beam irradiation of polymers is a good technique to modify properties such as electrical conductivity, structural behavior, and their mechanical properties. This paper reports on the effect of nitrogen and electron beam irradiation on the electrical properties of polyvinyl alcohol (PVA) films. PVA films of 4 mm were exposed to a charged (ion/electron) beam for different treatment times (15, 30, and 60 minutes); the beam was produced from a dual beam source using nitrogen gas with the other ion/electron source parameters optimized. The dielectric loss tangent tan δ , electrical conductivity σ , and dielectric constant ɛ ^' } in the frequency range 100 Hz-100 kHz were measured at room temperature. The variation of dielectric constant and loss tangent as a function of frequency was also studied at room temperature. The dielectric constant was found to be strongly dependent on frequency for both ion and electron beam irradiation doses. The real (ɛ ^' }) and imaginary (ɛ ^' ' }) parts of the dielectric constant decreased with frequency for all irradiated and non-irradiated samples. The AC conductivity showed an increase with frequency for all samples under the influence of both ion and electron irradiation for different times. Photoluminescence (PL) spectral changes were also studied. The formation of clusters and defects (which serve as non-radiative centers on the polymer surface) is confirmed by the decrease in the PL intensity.

  17. Low-energy electron irradiation induced top-surface nanocrystallization of amorphous carbon film

    Science.gov (United States)

    Chen, Cheng; Fan, Xue; Diao, Dongfeng

    2016-10-01

    We report a low-energy electron irradiation method to nanocrystallize the top-surface of amorphous carbon film in electron cyclotron resonance plasma system. The nanostructure evolution of the carbon film as a function of electron irradiation density and time was examined by transmission electron microscope (TEM) and Raman spectroscopy. The results showed that the electron irradiation gave rise to the formation of sp2 nanocrystallites in the film top-surface within 4 nm thickness. The formation of sp2 nanocrystallite was ascribed to the inelastic electron scattering in the top-surface of carbon film. The frictional property of low-energy electron irradiated film was measured by a pin-on-disk tribometer. The sp2 nanocrystallized top-surface induced a lower friction coefficient than that of the original pure amorphous film. This method enables a convenient nanocrystallization of amorphous surface.

  18. Exhaust gas treatment by electron beam irradiation

    International Nuclear Information System (INIS)

    Shibamura, Yokichi; Suda, Shoichi; Kobayashi, Toshiki

    1991-01-01

    Among global environmental problems, atmospheric pollution has been discussed since relatively old days, and various countermeasures have been taken, but recently in connection with acid rain, the efficient and economical treatment technology is demanded. As the denitration and desulfurization technology for the exhaust gas from the combustion of fossil fuel, the incineration of city trash and internal combustion engines, three is the treatment method by electron beam irradiation. By irradiating electron beam to exhaust gas, nitrogen oxides and sulfur oxides are oxidized to nitric acid and sulfuric acid, and by promoting the neutralization of these acids with injected alkali, harmless salts are recovered. This method has the merit that nitrogen oxides and surfur oxides can be removed efficiently with a single system. In this report, as for the exhaust gas treatment by electron beam irradiation, its principle, features, and the present status of research and development are described, and in particular, the research on the recent exhaust gas treatment in city trash incineration is introduced. This treatment method is a dry process, accordingly, waste water disposal is unnecessary. The reaction products are utilized as fertilizer, and waste is not produced. (K.I.)

  19. Calibration of dosimeters at 80-120 keV electron irradiation

    DEFF Research Database (Denmark)

    Miller, A.; Helt-Hansen, J.

    to calibrate thin-film dosimeters (Risø B3 and alanine films) by irradiation at the 80–120 keV electron accelerators. This calibration was compared to a 10MeV calibration, and we show that the radiation response of the dosimeter materials (the radiation chemical yield) is constant at these irradiation energies....... However, dose gradients within the dosimeters, when it is irradiated at low electron energies,mean that calibration function here will depend on both irradiation energy and the required effective point of measurement of the dosimeter. These are general effects that apply to any dosimeter that has a non...

  20. The thermal and mechanical properties of electron beam-irradiated polylactide

    International Nuclear Information System (INIS)

    Kuk, In Seol; Jung, Chan Hee; Hwang, In Tae; Choi, Jae Hak; Nho, Young Chang

    2010-01-01

    The effect of electron beam irradiation on the thermal and mechanical properties of polylactide (PLA) was investigated in this research. PLA films were irradiated by electron beams at different absorption doses ranging from 20 to 200 kGy. The thermal and mechanical properties of the irradiated PLA films were investigated by means of differential scanning calorimeter, thermogravimetric analyzer, universal testing machine, dynamic mechanical analyzer, and thermal mechanical analyzer. The results revealed that the chain scission of the PLA predominated over the crosslinking during the irradiation, which considerably deteriorated the thermal and mechanical properties of the PLA

  1. Effects of electron beam irradiation on cut flowers and mites

    International Nuclear Information System (INIS)

    Dohino, Toshiyuki; Tanabe, Kazuo

    1994-01-01

    Two spotted spider mite, Tetranychus urticae KOCH were irradiated with electron beams (2.5MeV) to develop an alternative quarantine treatment for imported cut flowers. The tolerance of eggs increased with age (1-5-day-old). Immature stages (larva-teleiochrysalis) irradiated at 0.4-0.8kGy increased tolerance with their development. Mated mature females irradiated at 0.4kGy or higher did not produce viable eggs, although temporary recovery was observed at 0.2kGy. Adult males were sterilized at 0.4kGy because non-irradiated virgin females mated with yielded female progeny malformed and sterilized. Various effects of electron beam irradiation were observed when nine species of cut flowers were irradiated in 5MeV Dynamitron accelerator. Chrysanthemum and rose were most sensitive among cut flowers. (author)

  2. High energy electron irradiation of flowable materials

    International Nuclear Information System (INIS)

    Offermann, B.P.

    1975-01-01

    In order to efficiently irradiate a flowable material with high energy electrons, a hollow body is disposed in a container for the material and the material is caused to flow in the form of a thin layer across a surface of the body from or to the interior of the container while the material flowing across the body surface is irradiated. (U.S.)

  3. Positron lifetime studies of electron irradiated copper

    International Nuclear Information System (INIS)

    Hadnagy, T.D.

    1976-01-01

    Single-crystal copper was irradiated with 4.5-MeV electrons producing simple Frenkel defects as well as a significant concentration of divacancies. Mean positron lifetime characteristics, which are sensitive to the presence of vacancies and multivacancies in copper, was monitored after isochronal anneals between 80 and 800 0 K to determine the relative change of characteristic mean lifetimes and their associated intensities. Also a study of the dependence of the mean positron lifetime on the total electron fluence was made and compared with existing theories relating these lifetimes to vacancy or multivacancy concentrations. Numerical data from curve fitting procedures using a conventional trapping model for defect-induced changes in positron lifetimes indicate that upon irradiation with 4.5-MeV electrons at 80 0 K, about 8 percent of the defects produced are divacancy units. Divacancy units appear to be several times more effective in trapping positrons than are monovacancies. Further, the experimental data suggest that the stage III annealing processes in electron-irradiated copper most probably involve the motion and removal of both monovacancies and divacancies. A conglomerate (multivacancy) unit appears to exist as a stable entity even after annealing procedures are carried out at temperatures slightly above the stage III region. Such a stable unit could serve as a nucleation center for the appearance of voids

  4. Effect of electron irradiation on hatchability and broiler performance of hatching eggs

    International Nuclear Information System (INIS)

    Castaneda, S.M.P.; Tellez, I.G.; Sanchez, R.E.; Quintana, L.J.A.; Bustos, R.E.

    1996-01-01

    The irradiation of foods employs the electromagnetic ionizing energy, and the gamma ray, the X ray and the electrons are used. The electrons are reduced mass particles and have negative electric charge. The difference between the gamma rays, X-ray and electron is the penetration level. The effective range on penetration of electron accelerator depends on the energy level, in practice the penetation of an electron beam in the foods is 5 mm for MeV. The objectives of this work were to evaluate the effects of electron irradiation on the hatchability, and to evaluate the productive parameters of chicken hatching from egg irradiated with electrons. (author). 15 refs., 6 tabs

  5. Changes in mechanical and chemical wood properties by electron beam irradiation

    International Nuclear Information System (INIS)

    Schnabel, Thomas; Huber, Hermann; Grünewald, Tilman A.; Petutschnigg, Alexander

    2015-01-01

    Highlights: • Changes in wood due to electron beam irradiations (EBI) were evaluated. • Wood components undergo different altering mechanisms due to the irradiation. • Chemical reactions in wood lead to better surface hardness of low irradiated wood. - Abstract: This study deals with the influence of various electron beam irradiation (EBI) dosages on the Brinell hardness of Norway spruce. The results of the hardness measurements and the FT-IR spectroscopic analysis show different effects of the EBI at dosages of 25, 50, 100 and 200 kGy. It was assumed that the lignin and carbohydrates undergo different altering mechanisms due to the EBI treatment. New cleavage products and condensation reactions of lignin and carbohydrates lead to better surface hardness of low irradiated wood samples. These results provide a useful basis for further investigations on the changes in wood chemistry and material properties due to electron beam irradiations

  6. Changes in mechanical and chemical wood properties by electron beam irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Schnabel, Thomas, E-mail: thomas.schnabel@fh-salzburg.ac.at [Salzburg University of Applied Sciences, Department of Forest Products Technology and Wood Constructions, Marktstraße 136a, 5431 Kuchl (Austria); Huber, Hermann [Salzburg University of Applied Sciences, Department of Forest Products Technology and Wood Constructions, Marktstraße 136a, 5431 Kuchl (Austria); Grünewald, Tilman A. [BOKU University of Natural Resources and Life Sciences, Institute of Physics and Materials Science, Peter Jordan Straße 82, 1190 Vienna (Austria); Petutschnigg, Alexander [Salzburg University of Applied Sciences, Department of Forest Products Technology and Wood Constructions, Marktstraße 136a, 5431 Kuchl (Austria); BOKU University of Natural Resources and Life Sciences, Konrad Lorenzstraße 24, 3430 Tulln (Austria)

    2015-03-30

    Highlights: • Changes in wood due to electron beam irradiations (EBI) were evaluated. • Wood components undergo different altering mechanisms due to the irradiation. • Chemical reactions in wood lead to better surface hardness of low irradiated wood. - Abstract: This study deals with the influence of various electron beam irradiation (EBI) dosages on the Brinell hardness of Norway spruce. The results of the hardness measurements and the FT-IR spectroscopic analysis show different effects of the EBI at dosages of 25, 50, 100 and 200 kGy. It was assumed that the lignin and carbohydrates undergo different altering mechanisms due to the EBI treatment. New cleavage products and condensation reactions of lignin and carbohydrates lead to better surface hardness of low irradiated wood samples. These results provide a useful basis for further investigations on the changes in wood chemistry and material properties due to electron beam irradiations.

  7. Effect of Gamma and Electron Beam Irradiation on Textile Waste Water

    International Nuclear Information System (INIS)

    Selambakkannu, S.; Khomsaton Abu Bakar; Ting, T.M.

    2011-01-01

    In this studies gamma and electron beam irradiation was used to treat textile waste water. Comparisons between both types of irradiation in terms of effectiveness to degrade the pollutants present in textile waste water was done. Prior to irradiation, the raw wastewater was diluted using distilled water to a target concentration of COD 400 mg/l. The sample was irradiated at selected doses between the ranges of 10 kGy to 100 kGy. The results showed that irradiation has significantly contributed in the reduction of the highly colored refractory organic pollutants. The COD removal at the lowest dose, 10 kGy, was reduced to 390 mg/l for gamma and 400 mg/l for electron beam. Meanwhile, at the highest dose, 100 kGy, the COD was reduced to 125 mg/l for gamma and 144 mg/l for electron beam. The degree of removal is influenced by the dose introduced during the treatment process. As the dose increased, the higher the removal of organic pollutant was recorded. However, gamma irradiation is more effective although the differences are not significant between gamma and electron beam irradiation. On the other hand, other properties of the wastewater such as pH, turbidity, suspended solid, BOD and color also shows a gradual decrease as the dose increases for both types of irradiation. (author)

  8. Plastic coating on paper by electron beam irradiation

    International Nuclear Information System (INIS)

    Ametani, Kazuo; Tsuchiya, Mitsuaki; Sawai, Takeshi

    1984-01-01

    It has been known long since that the resin system of unsaturated polyester and vinylmonomer mixture cures by irradiation. Ford of USA for the first time industrialized the radiation curing reaction of resins for the coating of automobile parts. Thereafter, accompanying the development and technical advance of the low energy electron beam irradiation apparatus which is suitable to surface treatment such as coating and easy to handle and the development of resins, the electron beam curing method has become to be utilized for coating hardboard and wooden doors, coating automobile tire rims, adhering printing papers and others. The electron beam curing method has advantage such as energy conservation, resource saving and little pollution because solvent is not used, high production rate and small floor space. In glossing industry, for the purpose of developing the techniques to apply electron beam curing method to glazed paper production, the selection of the composition of resins suitable to glazed papers, the irradiating condition and the properties of cured films were examined. The films withstanding bending can be obtained at low dose with urethane group, ester group or the combination of monomers. (Kako, I.)

  9. Spatial chirp in Ti:sapphire multipass amplifier

    International Nuclear Information System (INIS)

    Li Wenkai; Lu Jun; Li Yanyan; Guo Xiaoyang; Wu Fenxiang; Yu Linpeng; Wang Pengfei; Xu Yi; Leng Yuxin

    2017-01-01

    The spatial chirp generated in the Ti:sapphire multipass amplifier is numerically investigated based on the one-dimensional (1D) and two-dimensional (2D) Frantz–Nodvik equations. The simulation indicates that the spatial chirp is induced by the spatially inhomogeneous gain, and it can be almost eliminated by utilization of proper beam profiles and spot sizes of the signal and pump pulses, for example, the pump pulse has a top-hatted beam profile and the signal pulse has a super-Gaussian beam profile with a relatively larger spot size. In this way, a clear understanding of spatial chirp mechanisms in the Ti:sapphire multipass amplifier is proposed, therefore we can effectively almost eliminate the spatial chirp and improve the beam quality of a high-power Ti:sapphire chirped pulse amplifier system. (paper)

  10. Electronic emission and electron spin resonance of irradiated clothes: (cottons, synthetic clothes)

    International Nuclear Information System (INIS)

    El Ajouz Rima, H.

    1984-10-01

    This thesis is devoted to a new method of dosimetry applicable to accidental irradiations. It is based on the use of cotton and synthetic fabric clothes as detectors. It enables absorbed doses and body dose distributions to be estimated after an accidental irradiation. A bibliography on textile fibres used for clothing is presented in the first chapter: origin, structure, industrial treatments, effects of heat, light, ionizing radiations. In the second chapter, electronic emission generated by double stimulation (thermal and optic) is described. This phenomenon reveals changes in the surface state of cotton. Exo-emission was chosen because of its high sensitivity in dosimetry. The third chapter is devoted to the application of electron paramagnetic resonance to the dosimetry of irradiated fabrics. After a brief description of the spectrometer used, the results obtained with commercial cotton fabrics and with a special fabric realized by the Institut Textile de France are described some of these fabrics were subjected to special treatments either before or after irradiation. Synthetic fabrics (polyesters and polypropylene) have also been studied. (author)

  11. The reaction rates of electrons with native and irradiated ribonuclease

    International Nuclear Information System (INIS)

    Schuessler, H.; Ebert, M.; Davies, J.V.

    1977-01-01

    The rate of reaction of hydrated electrons with proteins depends, amongst other things, on the conformational structure of the protein, and irradiation itself causes conformational changes in proteins. A study has been made of variations in the reaction rates of hydrated electrons with RNase pre-irradiated by the Linac or by a 60 Co γ-source. The reaction rate constants varied with the pre-irradiation dose, the concentration of phosphate buffer, the enzyme concentration and also the presence of 10 -2 M ethanol. These variations serve to emphasize the importance of the tertiary structure of biological molecules in irradiation processes and have significant implications in the mathematical analysis of the inactivation of enzymes in steady-state irradiation processes. (U.K.)

  12. Commercializing ALURTRONs electron beam irradiation services

    International Nuclear Information System (INIS)

    Siti Aiasah Hashim; Mohd Sidek Othman; Shari Jahar; Sarada Idris; Naurah Mohd Isa; Muhamad Zahidee Taat

    2010-01-01

    ALURTRON has been the nation's sole electron irradiation service provider for research sectors. The main irradiation is done by utilising the EPS 3000 Cockcroft-Walton type 3.0 MeV, 90 k Watts electron beam machine (EBM). With more than 15 years experience in the operation and maintenance of the EPS, the challenge is now to commercialize the service at a larger and profitable scale. Medical products sterilization at commercial level has been ruled out since the energy is insufficient to penetrate dense and non-homogenous items. Recently, the demand for irradiation of wire and heat shrinkable tubes is showing bigger commercial potential. Therefore, prudent planning considerations need to be taken to ensure profitable return to the agency. Calculations were made to estimate ALURTRON service capacity, based on the existing EBM and its auxiliary systems. Details of the calculation including all the variables are presented. Results indicated that Alurtron should be able to process a minimum of 1000 km of small wires per month, running at 150 m/ min, working in two shifts, 5 days a week. The projected revenue is dependent on the charges imposed on the basis of total length delivered. (author)

  13. On the threshold of damage formation in aluminum oxide via electronic excitations

    Energy Technology Data Exchange (ETDEWEB)

    Skuratov, V.A., E-mail: skuratov@jinr.ru [Joint Institute for Nuclear Research, Dubna (Russian Federation); O’Connell, J. [Centre for HRTEM, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Kirilkin, N.S. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Neethling, J. [Centre for HRTEM, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

    2014-05-01

    This work is aimed to determine the threshold of dense ionization induced damage formation and their morphology in sapphire single crystals irradiated with 1.2 MeV/amu Xe ions. Cross-sectional TEM examination of r-oriented Al{sub 2}O{sub 3} specimens irradiated to fluences of 2 × 10{sup 12} and 2 × 10{sup 13} cm{sup −2} has revealed discontinuous ion tracks visible from the irradiated surface up to a depth of 7.6 ± 0.1 μm. According to the SRIM code calculation, the threshold electronic stopping power for track formation in Al{sub 2}O{sub 3} is within the range 9.8 ÷ 10.5 keV/nm. This value agrees with those predicted by both inelastic and analytical thermal spike models.

  14. Change in equilibrium position of misfit dislocations at the GaN/sapphire interface by Si-ion implantation into sapphire—I. Microstructural characterization

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Sung Bo, E-mail: bolee@snu.ac.kr; Han, Heung Nam, E-mail: hnhan@snu.ac.kr; Lee, Dong Nyung [Department of Materials Science and Engineering and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 151-744 (Korea, Republic of); Ju, Jin-Woo [Korea Photonics Technology Institute, Gwangju 500-779 (Korea, Republic of); Kim, Young-Min; Yoo, Seung Jo; Kim, Jin-Gyu [Korea Basic Science Institute, Daejeon 305-806 (Korea, Republic of)

    2015-07-15

    Much research has been done to reduce dislocation densities for the growth of GaN on sapphire, but has paid little attention to the elastic behavior at the GaN/sapphire interface. In this study, we have examined effects of the addition of Si to a sapphire substrate on its elastic property and on the growth of GaN deposit. Si atoms are added to a c-plane sapphire substrate by ion implantation. The ion implantation results in scratches on the surface, and concomitantly, inhomogeneous distribution of Si. The scratch regions contain a higher concentration of Si than other regions of the sapphire substrate surface, high-temperature GaN being poorly grown there. However, high-temperature GaN is normally grown in the other regions. The GaN overlayer in the normally-grown regions is observed to have a lower TD density than the deposit on the bare sapphire substrate (with no Si accommodated). As compared with the film on an untreated, bare sapphire, the cathodoluminescence defect density decreases by 60 % for the GaN layer normally deposited on the Si-ion implanted sapphire. As confirmed by a strain mapping technique by transmission electron microscopy (geometric phase analysis), the addition of Si in the normally deposited regions forms a surface layer in the sapphire elastically more compliant than the GaN overlayer. The results suggest that the layer can largely absorb the misfit strain at the interface, which produces the overlayer with a lower defect density. Our results highlight a direct correlation between threading-dislocation density in GaN deposits and the elastic behavior at the GaN/sapphire interface, opening up a new pathway to reduce threading-dislocation density in GaN deposits.

  15. Microbial growth and sensory quality of dried potato slices irradiated by electrons

    International Nuclear Information System (INIS)

    Kim, Hyun-Jin; Song, Hyeon-Jeong; Song, Kyung-Bin

    2011-01-01

    Electron beam irradiation was applied to secure the microbial safety of dried purple sweet potato. After purple sweet potato slices had been dehydrated with 20% (w/w) maltodextrin solution, the samples were irradiated at doses 2, 4, 6, 8, and 10 kGy and then stored at 20 o C for 60 days. Microbiological data indicated that the populations of total aerobic bacteria and of yeast and molds significantly decreased with increase in irradiation dosage. Specifically, microbial load was reduced by about three log cycles at 6 kGy compared to those of the control. Based on the color measurement of the potato slices, electron beam irradiation treatment did not affect the color quality. Sensory evaluation results also showed that electron beam irradiation did not affect overall sensory scores during storage. These results suggest that electron beam irradiation could be useful for improving microbial safety without impairing the quality of the potato slices during storage.

  16. Electron beam irradiation of simulated diluted sulfurous off-gases from copper smelters

    International Nuclear Information System (INIS)

    Villanueva, L.; Ahumada, L.; Chmielewski, A.G.; Zimek, Z.; Bulka, S.; Licki, J.

    1998-01-01

    An experimental work for the verification of potential use of electron-beam irradiation processing for S O 2 removal from reduced-S O 2 -strength gases, between 1,000 and 10,000 ppm, was conducted in a laboratory unit equipped with a multi-purpose electron accelerator working with beam energy of 800 keV. During experimental tests performed, influence of different operating parameters on the overall S O 2 removal process was established. Tests were conducted under two main conditions, using only electron beam irradiation and using electron beam irradiation plus ammonia injection. Tests results proved the technical feasibility to move S O 2 from off-gases under working experimental conditions, i.e., S O 2 removal is achieved under the two modes of operation. When using only electron beam irradiation S O 2 removal efficiencies found were rather low, up to 40%, but in the case of using electron beam irradiation in conjunction with ammonia injection, it was found that S O 2 removal efficiency raises up to 85% under experimental conditions. (author)

  17. A peek into the history of sapphire crystal growth

    Science.gov (United States)

    Harris, Daniel C.

    2003-09-01

    After the chemical compositions of sapphire and ruby were unraveled in the middle of the 19th century, chemists set out to grow artificial crystals of these valuable gemstones. In 1885 a dealer in Geneva began to sell ruby that is now believed to have been created by flame fusion. Gemnologists rapidly concluded that the stones were artificial, but the Geneva ruby stimulated A. V. L. Verneuil in Paris to develop a flame fusion process to produce higher quality ruby and sapphire. By 1900 there was brisk demand for ruby manufactured by Verneuil's method, even though Verneuil did not publicly announce his work until 1902 and did not publish details until 1904. The Verneuil process was used with little alteration for the next 50 years. From 1932-1953, S. K. Popov in the Soviet Union established a capability for manufacturing high quality sapphire by the Verneuil process. In the U.S., under government contract, Linde Air Products Co. implemented the Verneuil process for ruby and sapphire when European sources were cut off during World War II. These materials were essential to the war effort for jewel bearings in precision instruments. In the 1960s and 1970s, the Czochralski process was implemented by Linde and its successor, Union Carbide, to make higher crystal quality material for ruby lasers. Stimulated by a government contract for structural fibers in 1966, H. LaBelle invented edge-defined film-fed growth (EFG). The Saphikon company, which is currently owned by Saint-Gobain, evolved from this effort. Independently and simultaneously, Stepanov developed edge-defined film-fed growth in the Soviet Union. In 1967 F. Schmid and D. Viechnicki at the Army Materials Research Lab grew sapphire by the heat exchanger method (HEM). Schmid went on to establish Crystal Systems, Inc. around this technology. Rotem Industries, founded in Israel in 1969, perfected the growth of sapphire hemispheres and near-net-shape domes by gradient solidification. In the U.S., growth of near

  18. Nanostructured sapphire optical fiber for sensing in harsh environments

    Science.gov (United States)

    Chen, Hui; Liu, Kai; Ma, Yiwei; Tian, Fei; Du, Henry

    2017-05-01

    We describe an innovative and scalable strategy of transforming a commercial unclad sapphire optical fiber to an allalumina nanostructured sapphire optical fiber (NSOF) that overcomes decades-long challenges faced in the field of sapphire fiber optics. The strategy entails fiber coating with metal Al followed by subsequent anodization to form anodized alumina oxide (AAO) cladding of highly organized pore channel structure. We show that Ag nanoparticles entrapped in AAO show excellent structural and morphological stability and less susceptibility to oxidation for potential high-temperature surface-enhanced Raman Scattering (SERS). We reveal, with aid of numerical simulations, that the AAO cladding greatly increases the evanescent-field overlap both in power and extent and that lower porosity of AAO results in higher evanescent-field overlap. This work has opened the door to new sapphire fiber-based sensor design and sensor architecture.

  19. Amorphization kinetics of Zr3Fe under electron irradiation

    International Nuclear Information System (INIS)

    Motta, A.T.; Howe, L.M.; Okamoto, P.R.

    1994-11-01

    Previous investigations using 40 Ar ion bombardments have revealed that Zr 3 Fe, which has an orthorhombic crystal structure, undergoes an irradiation-induced transformation from the crystalline to the amorphous state. In the present investigation, 0.9 MeV electron irradiations were performed at 28 - 220 K in a high-voltage electron microscope (HVEM). By measuring the onset, spread and final size of the amorphous region, factoring in the Gaussian distribution of the beam, a kinetic description of the amorphization in terms of dose, dose rate and temperature was obtained. The critical temperature for amorphization by electron irradiation was found to be ∼ 220 K, compared with 570 - 625 K for 40 Ar ion irradiation. Also, the dose-to-amorphization increased exponentially with temperature. Results indicated that the rate of growth of the amorphous region under the electron beam decreased with increasing temperature and the dose-to-amorphization decreased with increasing dose rate. The size of the amorphous region saturated after a given dose, the final size decreasing with increasing temperature, and it is argued that this is related to the existence of a critical dose rate, which increases with temperature, and below which no amorphization occurs. (author). 26 refs., 6 figs

  20. The use of electron accelerators for fresh fruit irradiation

    International Nuclear Information System (INIS)

    Ferdes, O.; Minea, R.

    2000-01-01

    There are presented the results of tests concerning the effects of accelerated electron-beam to some early fresh fruits like strawberries, cherries, sour-cherries and apples. The irradiation were performed on common varieties, in normal conditions, to the NILPRP-Electron Accelerator Laboratory facility consisting in electron-beam accelerators which have the following parameters: - mean beam current, 5 μA; - electron mean energy approximately, 7 MeV; - pulse period, 3.5 μs. The doses varied between 0.5-3.0 kGy and the dose rate was about 1500 Gy/min. It was determined the fruit shelf life and there were analysed the main organoleptic and nutritional properties, as: size, shape, colour, dry weight, acidity, total and reducing sugars, ascorbic acid content and other. For the electron-beam treated fruits it was pointed out an increase in freshness and shelf life extension by 5-7 days for strawberries and more than two weeks for cherries. Otherwise, for the applied doses, the electron-beam irradiation did not produce any significant changes in the fruit characteristic values. These results lead to the conclusion that the electron accelerators could be successfully used as a technological solution for the fresh fruits processing, in view of shelf life extension. There are presented also some technical and economical considerations on the feasibility of this technology and on the use of electron-beam machines for food irradiation. (authors)

  1. Acoustic mismatch model and thermal phonon radiation across a tin/sapphire interface with radiation temperatures between 1.6 and 3.7 K

    International Nuclear Information System (INIS)

    Bayrle, R.; Weis, O.

    1989-01-01

    Using a special sandwich arrangement consisting of a constantan film, an insulating oxide layer and a superconducting tin-tunnel junction evaporated on an a-cut sapphire, the temperature jump between tin and sapphire has been measured as function of thermal phonon flux under steady-state and transient conditions using rectangular current pulses in the constantan heater. The tunnel junction serves as a very fast thermometer with a time resolution in the nanosecond range. During the steady-state and the heatup interval, full agreement is found between experimental results, and the predictions of the acoustic mismatch model applied to the phonon transfer across the tin/sapphire interface and under the additional assumption that thermal equilibrium exists between electrons and phonons (one-temperature model). In contrast, very strong deviations are found during the cooling process which starts immediately after the end of the heating pulses. This observed nonequilibrium between electron and phonon system is discussed in more detail in a subsequent paper

  2. Studies of electron-beam irradiation on ethylene-styrene interpolymers

    CERN Document Server

    Liu, I C

    2002-01-01

    Electron-beam irradiation-induced structural and properties changes on ethylene-styrene interpolymers (ESI) have been studied at electron doses ranging from 0 to 200 kGy. The amounts of species generated by irradiation such as hydroxyls, hydroperoxides, carbonyls and unsaturated double bonds have been analyzed using ATR-FTIR. While the structural changes are minimal for ESI69 comprising 69 wt.% styrene regardless of the dose level, the changes for ESI40 comprising 40 wt.% styrene are dose dependent and reaches a maximum at a dose of 100 kGy. Gel permeation chromatography analysis indicates that macromolecular chain scission occurs at low irradiation dose and crosslinking dominates at high irradiation doses. The average molecular weights between crosslinks, M sub C 's, have been calculated using the Flory-Rehner equation based on data collected from solvent extraction experiments. The M sub C 's of ESI40 samples are much smaller than those of ESI69 samples. Irradiated ESI samples have higher glass transition t...

  3. Technology of irradiation of liquids by electron beams

    International Nuclear Information System (INIS)

    Tofaute, K.

    1979-01-01

    The methods of pretreatment, the technical details of the irradiating equipment, the applied radiation doses and the general requirements of the effectively working system are described. The extent of reinfection is compared in cases of heat-treated and electron-irradiated mud. The latter method gave significantly better results. (L.E.)

  4. Space-charge dynamics of polymethylmethacrylate under electron beam irradiation

    CERN Document Server

    Gong, H; Ong, C K

    1997-01-01

    Space-charge dynamics of polymethylmethacrylate (PMMA) under electron beam irradiation has been investigated employing a scanning electron microscope. Assuming a Gaussian space-charge distribution, the distribution range (sigma) has been determined using a time-resolved current method in conjunction with a mirror image method. sigma is found to increase with irradiation time and eventually attain a stationary value. These observations have been discussed by taking into account radiation-induced conductivity and charge mobility. (author)

  5. Further study of the glassy low-temperature properties of irradiated crystalline quartz: neutron and electron irradiation

    International Nuclear Information System (INIS)

    Laermans, C.; Daudin, B.

    1979-01-01

    Recently it has been shown that a quartz crystal after light fast neutron irradiation shows low temperature hypersonic properties which are similar to those found in glasses although the sample was still crystalline. Additional measurements have been carried out in the neutron-irradiated sample and a sample irradiated with high energy electrons has also been investigated. (Fast neutron dose 6 x 10 18 n/cm 2 , 2 MeV electron dose 3 x 10 19 e/cm 2 ). A magnetic field up to 1.5 T was found to have no influence in the hypersonic saturation behaviour of the neutron-irradiated sample (9 GHz, 1.65 K) and thermal conductivity measurements are consistent with a number of two level systems (2 LS) an order of magnitude lower than in vitreous silica as found before. Low temperature hypersonic measurements as a function of acoustic intensity and temperature as well as thermal conductivity measurements give no evidence for the presence of 2 LS in the electron irradiated sample. Considering the damage created in both samples this indicates that 2 LS are probably not related to point defects

  6. Comparative effectiveness of gamma-rays and electron beams in food irradiation

    International Nuclear Information System (INIS)

    Hayashi, Toru

    1991-01-01

    Ionizing radiations which can be used for the treatment of foods are gamma-rays from Co-60 and Cs-137, accelerated electrons from a machine at an energy of 10 MeV or lower and X-rays from a machine at an energy of 5 MeV or lower. The Joint FAO/IAEA/WHO Expert Committee on the Wholesomeness of Irradiated Food held in 1980 concluded that the foods irradiated at overall average doses up to 10 kGy with the radiation listed above are wholesome for human consumption. While most of the commercial food irradiations are conducted with gamma-rays from Co-60, accelerated electrons are increasingly utilized for treating foods. An important difference between gamma-rays and accelerated electrons is the penetration capacity in materials. The penetration capacity of gamma-rays is much higher than that of accelerated electrons. Another important difference is the dose rate. The dose rates of gamma-rays from commercial Co-60 sources are 1-100 Gy/min, while those of electron beams from electron accelerators are 10 3 -10 6 Gy/s. Ideally a comparison of the effect of different types of ionizing radiation should be carried out at the same dose rate but this has been difficult due to the design of irradiators. It is very difficult to draw a definite conclusion on the difference in the effectiveness in food irradiation between gamma-rays and electron beams based on published data. This chapter deals with as many reports as possible on the comparative effectiveness of gamma-rays and electron beams and on the effect of dose rate on chemical reactions and living organisms, whether or not they demonstrate any dependency of the effect of irradiation on dose rate and type of radiation. (author)

  7. Electrical properties of gallium arsenide irradiated with electrons and neutrons

    International Nuclear Information System (INIS)

    Kol'chenko, T.I.; Lomako, V.M.

    1975-01-01

    A study was made of changes in the electrical properties of GaAs doped with Te, S, Se, Si, Ge, Sn (n 0 approximately 10 16 -10 18 cm -3 ) and irradiated either with 2.5-28 MeV electrons or with fast reactor neutrons. An analysis of changes in the electron density indicated that the rate of carrier removal by electron bombardment was independent of the dopant but was governed by isolated radiation defects. The change in the mobility due to irradiation with 2.5-10 MeV electrons was also governed by isolated defects. When the electron energy was increased to 28 MeV the main contribution to the change in the mobility was made by defect clusters. In the neutron-irradiation case the changes in the carrier density and mobility were mainly due to defect clusters and the nature of changes in the electrical properties was again independent of the dopant

  8. Comparative study on disinfection potency of spore forming bacteria by electron-beam irradiation and gamma-ray irradiation

    International Nuclear Information System (INIS)

    Takizawa, Hironobu; Suzuki, Satoru; Suzuki, Tetsuya; Takama, Kozo; Hayashi, Toru; Yasumoto, Kyoden.

    1990-01-01

    Along with gamma-ray irradiation, electron-beam irradiation (EB) is a method to disinfect microorganisms which cause food decomposition and food-poisoning. The present study was undertaken to compare sterilization efficacy of EB and gamma-ray irradiation on bacterial spores and vegetative cells under various conditions. Spores of Bacillus pumilus, a marker strain for irradiation study, and Bacillus stearothermophilus known as a thermophilic bacteria were irradiated by electron-beam and gamma-ray separately at irradiation dose of 0 to 10 kGy on combination of wet/dry and aerobic/anaerobic conditions. Sterilization effect of irradiation on spores was evaluated by colony counting on agar plates. Results showed that both EB and gamma-ray irradiation gave sufficient sterilization effect on spores, and the sterilization effect increased exponentially with irradiation dose. The sterilization effect of gamma-ray irradiation was higher than that of EB in all cases. Higher disinfection effect was observed under aerobic condition. The present study suggests that oxygen supply in EB is more important than gamma-ray irradiation. No results suggesting that chlorine ion at 0.1 ppm (as available chlorine concentration) enhanced the sterilization efficacy of either EB or gamma-ray irradiation was obtained under any conditions examined. (author)

  9. Comparative study on disinfection potency of spore forming bacteria by electron-beam irradiation and gamma-ray irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Takizawa, Hironobu; Suzuki, Satoru; Suzuki, Tetsuya; Takama, Kozo [Hokkaido Univ., Hakodate (Japan). Faculty of Fisheries; Hayashi, Toru; Yasumoto, Kyoden

    1990-10-01

    Along with gamma-ray irradiation, electron-beam irradiation (EB) is a method to disinfect microorganisms which cause food decomposition and food-poisoning. The present study was undertaken to compare sterilization efficacy of EB and gamma-ray irradiation on bacterial spores and vegetative cells under various conditions. Spores of Bacillus pumilus, a marker strain for irradiation study, and Bacillus stearothermophilus known as a thermophilic bacteria were irradiated by electron-beam and gamma-ray separately at irradiation dose of 0 to 10 kGy on combination of wet/dry and aerobic/anaerobic conditions. Sterilization effect of irradiation on spores was evaluated by colony counting on agar plates. Results showed that both EB and gamma-ray irradiation gave sufficient sterilization effect on spores, and the sterilization effect increased exponentially with irradiation dose. The sterilization effect of gamma-ray irradiation was higher than that of EB in all cases. Higher disinfection effect was observed under aerobic condition. The present study suggests that oxygen supply in EB is more important than gamma-ray irradiation. No results suggesting that chlorine ion at 0.1 ppm (as available chlorine concentration) enhanced the sterilization efficacy of either EB or gamma-ray irradiation was obtained under any conditions examined. (author).

  10. Gemstone color enhancement by electron beam irradiation-A preliminary study

    International Nuclear Information System (INIS)

    Sarada Idris; Zulkafli Ghazali; Shamshad Ahmad; Mohd Suhaimi Jusoh

    2010-01-01

    Treatment of gemstones has been going on for hundreds of years for enhancing color and clarity of gems devoid of these attributes. Whereas previous practices included fraudulent or otherwise processes to achieve the color enhancement, the ionizing radiation has proven to be a reliable and reproducible technique. Three types of irradiation processes include exposure to gamma radiation, electron beam irradiation and the nuclear power plants. Electron Beam Irradiation of Gemstone is a technique in which a gemstone is exposed to highly ionizing radiation electron beam to knock off electrons to generate color centers culminating in introduction of deeper colors. The color centers may be stable or unstable. Below 9 MeV, normally no radioactivity is introduced in the exposed gems. A study was conducted at Electron Beam Irradiation Centre (Alurtron) for gemstone color enhancement by using different kind of precious gemstones mined in Pakistan and elsewhere. The study shows that EB Irradiation not only enhances the color but also improves the clarity of the gemstones. The treated stones included kunzite tourmaline topaz quartz aquamarine and cultured pearls. Doses ranging from 25 kGy to 200 kGy were employed to assess the influence of doses on color and clarity and to select the optimum doses. The samples used included both the rough and the faceted gems. It is concluded that significant revenue generation is associated with the enhancement of the color in clarity of gemstones which are available at very cheap price in the world market. (author)

  11. Temperature-modulated annealing of c-plane sapphire for long-range-ordered atomic steps

    International Nuclear Information System (INIS)

    Yatsui, Takashi; Kuribara, Kazunori; Sekitani, Tsuyoshi; Someya, Takao; Yoshimoto, Mamoru

    2016-01-01

    High-quality single-crystalline sapphire is used to prepare various semiconductors because of its thermal stability. Here, we applied the tempering technique, which is well known in the production of chocolate, to prepare a sapphire substrate. Surprisingly, we successfully realised millimetre-range ordering of the atomic step of the sapphire substrate. We also obtained a sapphire atomic step with nanometre-scale uniformity in the terrace width and atomic-step height. Such sapphire substrates will find applications in the preparation of various semiconductors and devices. (paper)

  12. Modification of PLGA Nanofibrous Mats by Electron Beam Irradiation for Soft Tissue Regeneration

    Directory of Open Access Journals (Sweden)

    Jae Baek Lee

    2015-01-01

    Full Text Available Biodegradable poly(lactide-co-glycolide (PLGA has found widespread use in modern medical practice. However, the degradation rate of PLGA should be adjusted for specific biomedical applications such as tissue engineering, drug delivery, and surgical implantation. This study focused on the effect of electron beam radiation on nanofibrous PLGA mats in terms of physical properties and degradation behavior with cell proliferation. PLGA nanofiber mats were prepared by electrospinning, and electron beam was irradiated at doses of 50, 100, 150, 200, 250, and 300 kGy. PLGA mats showed dimensional integrity after electron beam irradiation without change of fiber diameter. The degradation behavior of a control PLGA nanofiber (0 kGy and electron beam-irradiated PLGA nanofibers was analyzed by measuring the molecular weight, weight loss, change of chemical structure, and fibrous morphology. The molecular weight of the PLGA nanofibers decreased with increasing electron beam radiation dose. The mechanical properties of the PLGA nanofibrous mats were decreased with increasing electron beam irradiation dose. Cell proliferation behavior on all electron beam irradiated PLGA mats was similar to the control PLGA mats. Electron beam irradiation of PLGA nanofibrous mats is a potentially useful approach for modulating the biodegradation rate of tissue-specific nonwoven nanofibrous scaffolds, specifically for soft tissue engineering applications.

  13. Enhanced thermal stability of a polymer solar cell blend induced by electron beam irradiation in the transmission electron microscope

    Energy Technology Data Exchange (ETDEWEB)

    Bäcke, Olof, E-mail: obacke@chalmers.se [Department of Applied Physics, Chalmers University of Technology, 41296 Göteborg (Sweden); Lindqvist, Camilla; Diaz de Zerio Mendaza, Amaia [Department of Chemistry and Chemical Engineering, Chalmers University of Technology, 41296 Göteborg (Sweden); Gustafsson, Stefan [Department of Applied Physics, Chalmers University of Technology, 41296 Göteborg (Sweden); Wang, Ergang; Andersson, Mats R.; Müller, Christian [Department of Chemistry and Chemical Engineering, Chalmers University of Technology, 41296 Göteborg (Sweden); Kristiansen, Per Magnus [Institute of Polymer Nanotechnology (INKA), FHNW University of Applied Science and Arts Northwestern Switzerland, 5210 Windisch (Switzerland); Laboratory for Micro- and Nanotechnology, Paul Scherrer Institute, 5232 Villigen (Switzerland); Olsson, Eva, E-mail: eva.olsson@chalmers.se [Department of Applied Physics, Chalmers University of Technology, 41296 Göteborg (Sweden)

    2017-05-15

    We show by in situ microscopy that the effects of electron beam irradiation during transmission electron microscopy can be used to lock microstructural features and enhance the structural thermal stability of a nanostructured polymer:fullerene blend. Polymer:fullerene bulk-heterojunction thin films show great promise for use as active layers in organic solar cells but their low thermal stability is a hindrance. Lack of thermal stability complicates manufacturing and influences the lifetime of devices. To investigate how electron irradiation affects the thermal stability of polymer:fullerene films, a model bulk-heterojunction film based on a thiophene-quinoxaline copolymer and a fullerene derivative was heat-treated in-situ in a transmission electron microscope. In areas of the film that exposed to the electron beam the nanostructure of the film remained stable, while the nanostructure in areas not exposed to the electron beam underwent large phase separation and nucleation of fullerene crystals. UV–vis spectroscopy shows that the polymer:fullerene films are stable for electron doses up to 2000 kGy. - Highlights: • Thermal stability of a polymer: fullerne blend is increased using electron irradiation. • Using in-situ transmission electron microscopy the nanostructure is studied. • Electron irradiation stops phase separation between the polymer and fullerene. • Electron irradiation quenches the formation and nucleation of fullerene crystals.

  14. Deactivation of group III acceptors in silicon during keV electron irradiation

    International Nuclear Information System (INIS)

    Sah, C.; Sun, J.Y.; Tzou, J.J.; Pan, S.C.

    1983-01-01

    Experimental results on p-Si metal-oxide-semiconductor capacitors (MOSC's) are presented which demonstrate the electrical deactivation of the acceptor dopant impurity during 8-keV electron irradiation not only in boron but also aluminum and indium-doped silicon. The deactivation rates of the acceptors during the 8-keV electron irradiation are nearly independent of the acceptor impurity type. The final density of the remaining active acceptor approaches nonzero values N/sub infinity/, with N/sub infinity/(B) Al--H>In-H. These deactivation results are consistent with our hydrogen bond model. The thermal annealing or regeneration rate of the deactivated acceptors in the MOSC's irradiated by 8-keV electron is much smaller than that in the MOSC's that have undergone avalanche electron injection, indicating that the keV electron irradiation gives rise to stronger hydrogen-acceptor bond

  15. Manufacture of electron beam irradiation vessel and its characteristics

    International Nuclear Information System (INIS)

    Kanazawa, Takao; Haruyama, Yasuyuki; Yotsumoto, Keiichi

    1992-05-01

    Electron beam irradiation vessel, which is used for the irradiation of samples under an inert or a vacuum atmosphere, is made by considering the temperature control during or after irradiation. The vessel was composed of the temperature controlable samples supporting plate, beam slit with water cooling plate and the insert of thermosensor. The four samples supporting plate was produced with the materials made up of aluminium, stainless steel (SUS304), and copper. The stainless steel supporting plate has a heater inside the cooling pipes for the high temperature treatment of samples without exposure to atmosphere after the irradiation. In this report, the temperature distribution and dose characteristics such as dose distribution and effects of backscattered electron were studied by using several supporting plate and the comparison of the experimental results with the simulated results was also carried out. (author)

  16. Single-Crystal Sapphire Optical Fiber Sensor Instrumentation

    Energy Technology Data Exchange (ETDEWEB)

    Pickrell, Gary [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States); Scott, Brian [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States); Wang, Anbo [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States); Yu, Zhihao [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States)

    2013-12-31

    This report summarizes technical progress on the program “Single-Crystal Sapphire Optical Fiber Sensor Instrumentation,” funded by the National Energy Technology Laboratory of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. This project was completed in three phases, each with a separate focus. Phase I of the program, from October 1999 to April 2002, was devoted to development of sensing schema for use in high temperature, harsh environments. Different sensing designs were proposed and tested in the laboratory. Phase II of the program, from April 2002 to April 2009, focused on bringing the sensor technologies, which had already been successfully demonstrated in the laboratory, to a level where the sensors could be deployed in harsh industrial environments and eventually become commercially viable through a series of field tests. Also, a new sensing scheme was developed and tested with numerous advantages over all previous ones in Phase II. Phase III of the program, September 2009 to December 2013, focused on development of the new sensing scheme for field testing in conjunction with materials engineering of the improved sensor packaging lifetimes. In Phase I, three different sensing principles were studied: sapphire air-gap extrinsic Fabry-Perot sensors; intensity-based polarimetric sensors; and broadband polarimetric sensors. Black body radiation tests and corrosion tests were also performed in this phase. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. At the beginning of Phase II, in June 2004, the BPDI sensor was tested at the Wabash River coal gasifier

  17. Quantitative analysis of complexes in electron irradiated CZ silicon

    International Nuclear Information System (INIS)

    Inoue, N.; Ohyama, H.; Goto, Y.; Sugiyama, T.

    2007-01-01

    Complexes in helium or electron irradiated silicon are quantitatively analyzed by highly sensitive and accurate infrared (IR) absorption spectroscopy. Carbon concentration (1x10 15 -1x10 17 cm -3 ) and helium dose (5x10 12 -5x10 13 cm -2 ) or electron dose (1x10 15 -1x10 17 cm -2 ) are changed by two orders of magnitude in relatively low regime compared to the previous works. It is demonstrated that the carbon-related complex in low carbon concentration silicon of commercial grade with low electron dose can be detected clearly. Concentration of these complexes is estimated. It is clarified that the complex configuration and thermal behavior in low carbon and low dose samples is simple and almost confined within the individual complex family compared to those in high concentration and high dose samples. Well-established complex behavior in electron-irradiated sample is compared to that in He-irradiated samples, obtained by deep level transient spectroscopy (DLTS) or cathodoluminescence (CL), which had close relation to the Si power device performance

  18. Immunological aspect of the electron-beam irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Ikeda, K [Hyogo College of Medicine, Nishinomiya (Japan)

    1978-05-01

    In the present study, sciatic nerve tissues of the cat were emulsified with the complete Freund's adjuvant and injected into the foot-pads of the guinea pig. Frozen and frozen-irradiated feline sciatic nerve tissues were treated in the similar manner, and their encephalitogenicity was comparatively studied. Affected animals became skinny, weak in the hind limbs and sometimes solid their tails. Antigenic mixtures of the fresh peripheral nerves with adjuvant have sensitized 75% (15 out of 20) of guinea pigs, whereas none of the 41 animals manifested any sign of experimental allergic neuritis (EAN) after intradermal Frozen-preserved peripheral nerve-adjuvant mixtures gave rise to EAN in 29% (6 out of 21) of guinea pigs. The present results appear to show that the electron-beam irradiation might have modified the specific chemical structures of the myelin basic protein to completely suppress the encephalitogenicity of the peripheral nerve-tissues. High-voltage cathode irradiations would be capable of depressing the antigenicity of the transplantation immunology when the antigenic determinants have the chemical structures in common with the encephalitogenic antigens. Excessive amount of the irradiation used to result in severe tissue damages, therefore, an optimum dosis of electron-beams should be determined for each tissue destined for grafting. As the frozen peripheral nerve-adjuvant mixtures have been less encephalitogenic, freezing alone might well be considered partially to improve the acceptability of the grafts. Cryopreservation of the irradiated allografts would be worth further studying.

  19. Immunological aspect of the electron-beam irradiation

    International Nuclear Information System (INIS)

    Ikeda, Kimiyuki

    1978-01-01

    In the present study, sciatic nerve tissues of the cat were emulsified with the complete Freund's adjuvant and injected into the foot-pads of the guinea pig. Frozen and frozen-irradiated feline sciatic nerve tissues were treated in the similar manner, and their encephalitogenicity was comparatively studied. Affected animals became skinny, weak in the hind limbs and sometimes solid their tails. Antigenic mixtures of the fresh peripheral nerves with adjuvant have sensitized 75% (15 out of 20) of guinea pigs, whereas none of the 41 animals manifested any sign of experimental allergic neuritis (EAN) after intradermal Frozen-preserved peripheral nerve-adjuvant mixtures gave rise to EAN in 29% (6 out of 21) of guinea pigs. The present results appear to show that the electron-beam irradiation might have modified the specific chemical structures of the myelin basic protein to completely suppress the encephalitogenicity of the peripheral nerve-tissues. High-voltage cathode irradiations would be capable of depressing the antigenicity of the transplantation immunology when the antigenic determinants have the chemical structures in common with the encephalitogenic antigens. Excessive amount of the irradiation used to result in severe tissue damages, therefore, an optimum dosis of electron-beams should be determined for each tissue destined for grafting. As the frozen peripheral nerve-adjuvant mixtures have been less encephalitogenic, freezing alone might well be considered partially to improve the acceptability of the grafts. Cryopreservation of the irradiated allografts would be worth further studying. (author)

  20. Thermal conductivity of electron-irradiated graphene

    Science.gov (United States)

    Weerasinghe, Asanka; Ramasubramaniam, Ashwin; Maroudas, Dimitrios

    2017-10-01

    We report results of a systematic analysis of thermal transport in electron-irradiated, including irradiation-induced amorphous, graphene sheets based on nonequilibrium molecular-dynamics simulations. We focus on the dependence of the thermal conductivity, k, of the irradiated graphene sheets on the inserted irradiation defect density, c, as well as the extent of defect passivation with hydrogen atoms. While the thermal conductivity of irradiated graphene decreases precipitously from that of pristine graphene, k0, upon introducing a low vacancy concentration, c reduction of the thermal conductivity with the increasing vacancy concentration exhibits a weaker dependence on c until the amorphization threshold. Beyond the onset of amorphization, the dependence of thermal conductivity on the vacancy concentration becomes significantly weaker, and k practically reaches a plateau value. Throughout the range of c and at all hydrogenation levels examined, the correlation k = k0(1 + αc)-1 gives an excellent description of the simulation results. The value of the coefficient α captures the overall strength of the numerous phonon scattering centers in the irradiated graphene sheets, which include monovacancies, vacancy clusters, carbon ring reconstructions, disorder, and a rough nonplanar sheet morphology. Hydrogen passivation increases the value of α, but the effect becomes very minor beyond the amorphization threshold.

  1. Effect of electronic beam irradiation on development of Plodia interpunctella (Huebner)

    International Nuclear Information System (INIS)

    Fan Jialin; Chen Yuntang; Li Xuzhao; Guo Dongquan; Lu Xiaohua; Zhang Jianwei; Yang Bao'an; Liu Jiangyu; Tian Zhanjun; Zhang Xiaoyan

    2011-01-01

    The electronic beam irradiation effects on different developed stages of Plodia interpunctella Huebner were studied. The hatch rate, pupation rate, emergence rate and reproductive capacity of insect after irradiation were tested. The results showed that the order of sensitivity of the life stages of Plodia interpunctella Huebner to electron beam irradiation was: egg > larva > pupae > adult. The hatch rate, pupation rate, emergence rate and reproductive capacity significantly decreased with the increasing of irradiation dose (P<0.05). The egg, larvae, pupae couldn't grow to adults after irradiation at 100, 250 and 600 Gy, respectively. No new generation adult was found after the adults were irradiation at 600 Gy. It is concluded that 600 Gy irradiation could be used as a suitable dose to prevent the reproduction of Plodia interpunctella Huebner during the storage of tobacco. (authors)

  2. Structural changes and tribological performance of thermosetting polyimide induced by proton and electron irradiation

    International Nuclear Information System (INIS)

    Lv, Mei; Wang, Yanming; Wang, Qihua; Wang, Tingmei; Liang, Yongmin

    2015-01-01

    The structural changes and tribological performance of thermosetting polyimide were investigated by electron, proton or both combined irradiations at 25 keV in a ground-based simulation facility. Three forms of irradiations could lead to the formation of the carbonized layer on the polymer surface that could increase the hardness and adhesive force of the material. Proton irradiation induced more extensive changes in structure and friction behavior than electron irradiation by reason of the higher linear energy transfer value, and combined irradiation resulted in the largest impact, but which was less than the sum of the radiation effects of electron and proton. Moreover, the experimental results indicated that the changes in friction behavior are closely related with the carbonized layer, which was easily worn out in friction process and could introduce a shift from adhesion wear to three-body abrasive wear that reduced the wear rate and the friction coefficient. The friction process of irradiated samples could be divided into the initial stage and the steady stage. Three forms of irradiations all induced the high friction coefficient in the initial stage and the low friction coefficient in the steady stage, and the wear rate of the irradiated samples decreased in the order: electron irradiation>proton irradiation>combined irradiation. - Highlights: • Proton irradiation induced more extensive changes in structure and friction behavior than electron irradiation. • The effect of combined irradiation was less than that of the sum of electron and proton irradiation. • Three forms of irradiations all induced the high initial friction coefficient and the low steady-stage friction coefficient. • The initial friction stage means a fast-wearing adhesive process while the steady-state of the system is a three-body abrasion

  3. Postharvest quality of cut roses following electron-beam irradiation

    International Nuclear Information System (INIS)

    Chang, A.Y.; Gladon, R.J.; Gleason, M.L.; Parker, S.K.; Agnew, N.H.; Olson, D.G.

    1997-01-01

    Cut Rosa x hybrida L. 'Royalty' flowers were used to determine the efficacy of electron-beam irradiation for increasing postharvest quality and decreasing petal infection by Botrytis cinerea Pers. In an experiment for determining the injury threshold, roses received electron-beam irradiation of 0, 0.5, 1, 2, and 4 kGy. Irradiation dosages greater than or equal to 4 kGy caused necrosis on petal tissue and decreased postharvest life at 20 degrees C. In a second experiment to evaluate postharvest quality, roses were irradiated at 0, 0.25, 0.5, 0.75, and 1 kGy. Dosages of 0.25 and 0.5 kGy slowed the rate of flower bud opening for 2 days but did not decrease postharvest quality when compared with nonirradiated roses. Roses that received irradiation dosages of 0.75 and 1 kGy showed unacceptable quality. In a third experiment, roses that had or had not been inoculated with B. cinerea were irradiated at 0, 0.25, 0.5, and 0.75 kGy. Irradiation did not control B. cinerea populations, and rose quality decreased as dosage increased. In a fourth experiment to determine the effect of irradiation on B. cinerea, conidia on water-agar plates exposed to dosages less than or equal to 1, 2, and 4 kGy germinated at rates of approximately 90%, 33%, and 2%, respectively, within 24 h

  4. Semipolar GaN grown on m-plane sapphire using MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Wernicke, Tim; Netzel, Carsten; Weyers, Markus [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Kneissl, Michael [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Institute of Solid State Physics, Technical University of Berlin (Germany)

    2008-07-01

    We have investigated the MOVPE growth of semipolar gallium nitride (GaN) films on (10 anti 1 0) m-plane sapphire substrates. Specular GaN films with a RMS roughness (10 x 10 {mu}m{sup 2}) of 15.2 nm were obtained and an arrowhead like structure aligned along[ anti 2 113] is prevailing. The orientation relationship was determined by XRD and yielded (212){sub GaN} parallel (10 anti 10){sub sapphire} and [anti 2113]{sub GaN} parallel [0001]{sub sapphire} as well as [anti 2113]{sub GaN} parallel [000 anti 1]{sub sapphire}. PL spectra exhibited near band edge emission accompanied by a strong basal plane stacking fault emission. In addition lower energy peaks attributed to prismatic plane stacking faults and donor acceptor pair emission appeared in the spectrum. With similar growth conditions also (1013) GaN films on m-plane sapphire were obtained. In the later case we found that the layer was twinned, crystallites with different c-axis orientation were present. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Surface flashover performance of epoxy resin microcomposites improved by electron beam irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Yin; Min, Daomin [State Key Laboratory of Electrical Insulation and Power Equipment, Xi' an Jiaotong University, Xi' an 710049 (China); Li, Shengtao, E-mail: stli@mail.xjtu.edu.cn [State Key Laboratory of Electrical Insulation and Power Equipment, Xi' an Jiaotong University, Xi' an 710049 (China); Li, Zhen; Xie, Dongri [State Key Laboratory of Electrical Insulation and Power Equipment, Xi' an Jiaotong University, Xi' an 710049 (China); Wang, Xuan [Key Laboratory of Engineering Dielectric and its Application, Ministry of Education, Harbin University of Science and Technology, Harbin 150040 (China); Lin, Shengjun [State Key Laboratory of Electrical Insulation and Power Equipment, Xi' an Jiaotong University, Xi' an 710049 (China); Pinggao Group Company Ltd., State Grid High Voltage Switchgear Insulation Materials Laboratory, Pingdingshan 467001 (China)

    2017-06-01

    Highlights: • Epoxy resin microcomposites were irradiated by electron beam with energies of 10 and 20 keV. • Surface flashover voltage increase with the increase of electron beam energy. • Both the untreated and irradiated samples have two trap centers, which are labeled as shallow and deep traps. • Deposition energy in epoxy resin microcomposites increases with electron beam energy, and surface trap properties are determined by deposition energy. • The influence of surface conductivity and trap distribution on flashover voltage is discussed. - Abstract: The influencing mechanism of electron beam irradiation on surface flashover of epoxy resin/Al{sub 2}O{sub 3} microcomposite was investigated. Epoxy resin/Al{sub 2}O{sub 3} microcomposite samples with a diameter of 50 mm and a thickness of 1 mm were prepared. The samples were irradiated by electron beam with energies of 10 and 20 keV and a beam current of 5 μA for 5 min. Surface potential decay, surface conduction, and surface flashover properties of untreated and irradiated samples were measured. Both the decay rate of surface potential and surface conductivity decrease with an increase in the energy of electron beam. Meanwhile, surface flashover voltage increase. It was found that both the untreated and irradiated samples have two trap centers, which are labeled as shallow and deep traps. The increase in the energy and density of deep surface traps enhance the ability to capture primary emitted electrons. In addition, the decrease in surface conductivity blocks electron emission at the cathode triple junction. Therefore, electron avalanche at the interface between gas and an insulating material would be suppressed, eventually improving surface flashover voltage of epoxy resin microcomposites.

  6. Practical aspects of the pasteurization of sewage sludge by electron irradiation

    International Nuclear Information System (INIS)

    Tauber, M.; Hofmann, E.G.; Offermann, B.P.

    1975-01-01

    Recently the demand for disinfection of sewage sludge has increased. Investigations have shown that the radiation pasteurization of sludge is the most preferable treatment. Up to now most of these investigations have been made with 60 Co radiation sources. However, it is not easy to run an economic and safe process line for the irradiation of sewage sludge with such isotope sources. Powerful electron accelerators are now available and the main features of the irradiation of sewage sludge with fast electrons are discussed and the design parameters of such installations described. From the standpoint of the limited electron penetration into the material it is desirable to use high-energy electrons (up to 1.5 MeV) whereas from an economic standpoint it may be better to use electrons of lower energies (0.5 to 1 MeV) and to homogenize the sewage sludge to the required thickness. The following parameters must be considered for a commercial process line: effectivity of the electron radiation process; limited penetration of electrons into the material to be irradiated; beam power of electron accelerators required for sewage sludge treatment; safety aspects; economics of the process with regard to electron energy, power and homogenization of the material; and environmental aspects of the installations. The practical aspects of commercial process lines for electron irradiation of sewage sludge and the design of handling equipment are discussed in relation to these parameters. (author)

  7. Design and implementation of a radiation hardened silicon on sapphire (SOS) embedded signal conditioning unit controller (SCUC) for the RAPID instrument on the Cluster satellites

    International Nuclear Information System (INIS)

    Ersland, L.

    1992-07-01

    The Cluster mission consistens of four spacecrafts equipped with instruments capable of making comprehensive measurements of plasma particles and electromagnetic fields. The RAPID (Research with Adaptive Particle Imaging Detectors) spectrometer is one of many instruments on board the Cluster satellites. It is designed for fast analysis of energetic electrons and ions with a complete coverage of the unit sphere in phase space. This thesis describes the development and testing of an embedded controller for the Spectroscopic Camera for Electrons, Neutral and Ion Compositions (SCENIC), which is a part of the RAPID instrument. The design is implemented in two different CMOS circuit technologies, namely Actel's Field Programmable Gate Arrays and GEC Plessey's CMOS Silicon On Sapphire (SOS) gate array. The prototypes of the SOS gate array have been verified and characterized. This includes measurements of DC and AC parameters under different conditions, including total dose of gamma irradiation. 42 refs., 92 figs., 44 tabs

  8. The change of pollen traits in gladiolus irradiated by electron beam

    International Nuclear Information System (INIS)

    Zhang Zhiwei; Wang Dan; Zhang Dongxue; Yuan Xianghui

    2007-01-01

    In order to investigate the feasibility of electron beam induced mutation on Gladiolus and the effects of electron beam with different doses on pollen traits, M1 generation pollen traits were studied by use of 3MeV electron beams with seven doses of 0Gy, 40Gy, 80Gy, 120Gy, 160Gy, 200Gy, 240Gy. It has been shown that the sterile pollen rate of M1 generation is higher than that of control. At low dose there had no obvious effects on the viability and germination rate of M1 generation pollen. With the increase of irradiation dose, the viability and germination rate of pollen was decreased and the difference had statistical significance (P<0.05). Comparing (SEM) photograph of the pollen shapes of M1 generation with control, within a certain doses level, mutagenic effects on pollen increased with the dose increasing in the angle of polynology. Variations of mutagenic effect extent were found at the different irradiation dosage. The EST isozymes expression of M1 generation pollen was obviously changed by electron beam irradiation confirmed by use of PAGE electrophoresis. EST patterns of pollen of Gladiolus irradiated at the dose no more than 120Gy were similar to CK, but there were some differences in the vigor of isozymes. The EST bands added or absent had been observed at the dose more than 160Gy compared to CK. There were a special EST band more and 2 EST bands less in plants treated by both 160Gy and 200Gy electron beam irradiation, and a special EST band more and 1 EST bands less in plants treated by 240Gy electron beam irradiation. The vigor of isozymes of plants treated at the dose more than 160Gy showed some respective differences compared to the other treated and CK's. These results revealed that electron beam irradiation is an effective way for Gladiolus breeding. (authors)

  9. An Economic Analysis of Electron Accelerators and Cobalt-60 for Irradiating Food

    OpenAIRE

    Morrison, Rosanna Mentzer

    1989-01-01

    Average costs per pound of irradiating food are similar for the electron accelerator and cobalt-60 irradiators analyzed in this study, but initial investment costs can vary by $1 million. Irradiation costs range from 0.5 to 7 cents per pound and decrease as annual volumes treated increase. Cobalt-60 is less expensive than electron beams for annual volumes below 50 million pounds. For radiation source requirements above the equivalent of 1 million curies of cobalt-60, electron beams are more e...

  10. Trapped electrons in irradiated single crystals of polyhydroxy compounds

    International Nuclear Information System (INIS)

    Box, H.C.; Budzinski, E.E.; Freund, H.G.; Potter, W.R.

    1979-01-01

    The intermolecular trapping of electrons has been observed in single crystals of dulcitol and L(+) arabinose x-irradiated at 4.2 0 K. Attribution of a major component of the ESR absorption to trapped electrons is based upon the character of the hyperfine pattern, which arises from multiple anisotropic hyperfine interactions with exchangeable protons, and on the g value of the absorption, which is always less than the free spin value. The removal of the trapped electron absorption upon irradiation with visible light has also been demonstrated. In these experiments all of the electrons are trapped in identical sites. This circumstance provides some important advantages in the study of the factors affecting the stabilization of charge in an environment of polarizable molecules

  11. The effects of electron beam irradiation on sterilization and preservation of chilled pork

    International Nuclear Information System (INIS)

    Bai Yanhong; Mao Duobin; Zhao Dianbo; Zhang Xiaoyan; Li Quanshun; Yang Gongming

    2009-01-01

    S The effects of electron beam irradiation on the sterilization and preservation of chilled pork were studied. The aim of this investigation was to provide academic and technical basis for application of electron beam irradiation on meat industry. The response surface analysis was used with electron beam energy(X 1 ) and dose(X 2 ) as factors and colony form unit(Y) as responses. The results have been shown that the model of sterilization of chilled pork by electron beam irradiation can be expressed Y=3.78-0.24X 1 -0.13X 2 -0.16X 1 X 2 -0.18X 1 2 +0.15X 1 2 (R 2 =0.9755). It has been found there is a interaction between electron beam energy and absorbed doses, and the significance sequence of factors is absorbed dose>interaction> electron beam energy. When absorbed doses are in range from 3.23 kGy to 4.0 kGy and electron beam energy is in range from 2.3 MeV to 3.8 MeV, the colony form unit would drop 2 logarithm units. The shelf life of samples treated with electron beam irradiation is longer by about 12 d than that of control samples when the samples are stored at 4 degree C. When the samples are stored at 7∼10 degree C, shelf life of samples treated with electron beam irradiation is longer by about 9 d than that of control samples. The results showed that electron beam irradiation has the effects of sterilization and preservation on chilled pork. This study has been confirmed that the application of electron beam irradiation is very useful for meat industry. (authors)

  12. Detection of electron beam irradiated crude drugs by electron spin resonance (ESR)

    International Nuclear Information System (INIS)

    Yamaoki, Rumi; Kimura, Shojiro; Aoki, Kenji; Nishimoto, Susumu

    2007-01-01

    Perillae Herba, Sennae Folium, Cinnamomi Cortex, Phellodendri Cortex, Ginseng Radix, Glycyrrhizae Radix, Paeoniae Radix, and Zingiberis Rhizoma were irradiated with electron beam (5 MeV) and organic radicals were detected by ESR measurement, before and after irradiation (10 kGy). A single line spectrum was detected at around g=2.005 in non-irradiated crude drugs, and radical concentrations were high in the leaf varieties of crude drugs. After irradiation, the signal intensity around g=2.005 increased, and a new subsignal was detected as a 3 mT shoulder of this signal. Broad, asymmetrically divided signals were also detected in irradiated root varieties of crude drugs. The free radical localized on the organic components of irradiated crude drugs tended to decrease with the water content. After irradiation, signal intensity reduced and reached a steady state after about 1 to 2 months. However, specificity of the ESR signal shape appearing after irradiation continued to be detectable for 6 months in leaf varieties and for a year in bark and root varieties of crude drugs. Consequently, it was concluded that ESR could be applied as an initial screening procedure to detect irradiated crude drugs. (author)

  13. Bulk and interface defects in electron irradiated InP

    International Nuclear Information System (INIS)

    Peng Chen; Sun Heng-hui

    1989-01-01

    Systematic studies on the structure of defects in InP caused by electron irradiation are conducted based on experimental measurements and theoretical calculations. The rates of introduction and annealing-out temperatures of In and P vancancies are estimated using proper theoretical models. These calculations reveal that after room temperature irradiation only complexes may exist. It is also supported by our experimental data that the sum of introducing rates of three detected levels are less than the theoretical value calculated for single vacancies. According to our equation on the relation between interface states and DLTS signal and from the results of computer calculation we believe that the broad peak appearing in the DLTS diagram before irradiation is related to interface states. Its disappearance after electron irradiation suggests the reduction of interface states; this is further confirmed by the reduction of surface recombination rate derived from the results of surface photovoltage measurement

  14. Monte Carlo study of electron irradiation effect on YBCO dpa profiles

    International Nuclear Information System (INIS)

    Pinnera, I.; Cruz, C.; Abreu, Y.; Leyva, A.; Van Espen, P.

    2011-01-01

    The Monte Carlo assisted Classical Method (MCCM) consists on a calculation procedure for determining the displacements per atom (dpa) distribution in solid materials. This algorithm allows studying the gamma and electron irradiation damage in different materials. It is based on the electrons elastic scattering classic theories and the use of Monte Carlo simulation for the physical processes involved. The present study deals with the Monte Carlo simulation of electron irradiation effects on YBa 2 Cu 3 O 7-x (YBCO) slabs using the MCNPX code system. Displacements per atom distributions are obtained through the MCCM for electron irradiation up to 10 MeV. In-depth dpa profiles for electrons and positrons are obtained and analyzed. Also, for each atomic species in the material, the dpa distributions are calculated. All the results are discussed in the present contribution. (Author)

  15. Analytical electron microscopy of neutron-irradiated reactor alloys

    International Nuclear Information System (INIS)

    Thomas, L.E.

    1982-01-01

    Exposure to the high neutron fluxes and temperatures from 400 to 650 0 C in the core region of a fast breeder reactor profoundly alters the microstructure and properties of structural steels and superalloys. The development of irradiation-induced voids, dislocations and precipitates, as well as segregation of alloying elements on a microscopic scale has been related to macroscopic swelling, creep, hardening and embrittlement which occur during prolonged exposures in reactor. Microanalytical studies using TEM/STEM methods, primarily energy dispersive x-ray (EDX) microanalysis, have greatly aided understanding of alloy behavior under irradiation. The main uses of analytical electron microscopy in studying irradiated alloys have been the identification of irradiation-induced precipitates and determination of the changes in local composition due to irradiation-induced solute segregation

  16. Waste treatment by microwave and electron beam irradiation

    International Nuclear Information System (INIS)

    Martin, D.; Craciun, G.; Manaila, E.; Ighigeanu, D; Oproiu, C.; Iacob, N.; Togoe, I.; Margaritescu, I.

    2007-01-01

    Comparative results obtained by applying separate and combined (successive and simultaneous) electron beam (EB) and microwave (MW) irradiation to waste treatment, such as food residuals (minced beef, wheat bran and wheat flour) and sewage sludge performed from a food industry wastewater treatment station (vegetable oil plant), are presented. The research results demonstrated that the simultaneous EB and MW irradiation produces the biggest reduction of microorganisms. The tests also demonstrated that the irradiation time and the upper limit of required EB absorbed dose, which ensures a complete sterilization effect, could be reduced by a factor of two by an additional use of MW energy to EB irradiation

  17. Analysis and modification of blue sapphires from Rwanda by ion beam techniques

    International Nuclear Information System (INIS)

    Bootkul, D.; Chaiwai, C.; Tippawan, U.; Wanthanachaisaeng, B.; Intarasiri, S.

    2015-01-01

    Highlights: • Ion beam analysis is an effective method for detecting trace elements. • Ion beam treatment is able to improve optical and color appearances of the blue sapphire from Rwanda. • These alternative methods can be extended to jewelry industry for large scale application. - Abstract: Blue sapphire is categorised in a corundum (Al_2O_3) group. The gems of this group are always amazed by their beauties and thus having high value. In this study, blue sapphires from Rwanda, recently came to Thai gemstone industry, are chosen for investigations. On one hand, we have applied Particle Induced X-ray Emission (PIXE), which is a highly sensitive and precise analytical technique that can be used to identify and quantify trace elements, for chemical analysis of the sapphires. Here we have found that the major element of blue sapphires from Rwanda is Al with trace elements such as Fe, Ti, Cr, Ga and Mg as are commonly found in normal blue sapphire. On the other hand, we have applied low and medium ion implantations for color improvement of the sapphire. It seems that a high amount of energy transferring during cascade collisions have altered the gems properties. We have clearly seen that the blue color of the sapphires have been intensified after nitrogen ion bombardment. In addition, the gems were also having more transparent and luster. The UV–Vis–NIR measurement detected the modification of their absorption properties, implying of the blue color increasing. Here the mechanism of these modifications is postulated and reported. In any point of view, the bombardment by using nitrogen ion beam is a promising technique for quality improvement of the blue sapphire from Rwanda.

  18. Radiosensitivity of chlorella after medium energy accelerated electron irradiation

    International Nuclear Information System (INIS)

    Roux, J.C.

    1966-06-01

    The survival curves (capability of multiplication) of chlorella pyrenoidosa after irradiations can be used for soft electrons (0.65 and 1 MeV), hence penetrating into only 2 to 4 millimeters of water: the algae are laying on porous membranes and the doses are calculated from the power of the electron beam measured by the electric current on a metallic target or by Fricke's dosimetry. With these techniques, it is showed and discussed the part of anoxia in the radioprotection (magnitude or reduction of the dose calculated from the slope of survival curves: 2.5 ) that is more important than the restoration studied by the fractionation of the dose. The 0.65 and 1 MeV electrons have a biologic effect lesser than 180 keV X-rays (RBE - relative biological efficiency - calculated on the slope of survival curves is 0.92 in aerated irradiation, 0.56 in the deoxygenated irradiation). (author) [fr

  19. Three-dimensional space charge distribution measurement in electron beam irradiated PMMA

    International Nuclear Information System (INIS)

    Imaizumi, Yoichi; Suzuki, Ken; Tanaka, Yasuhiro; Takada, Tatsuo

    1996-01-01

    The localized space charge distribution in electron beam irradiated PMMA was investigated using pulsed electroacoustic method. Using a conventional space charge measurement system, the distribution only in the depth direction (Z) can be measured assuming the charges distributed uniformly in the horizontal (X-Y) plane. However, it is difficult to measure the distribution of space charge accumulated in small area. Therefore, we have developed the new system to measure the three-dimensional space charge distribution using pulsed electroacoustic method. The system has a small electrode with a diameter of 1mm and a motor-drive X-Y stage to move the sample. Using the data measured at many points, the three-dimensional distribution were obtained. To estimate the system performance, the electron beam irradiated PMMA was used. The electron beam was irradiated from transmission electron microscope (TEM). The depth of injected electron was controlled using the various metal masks. The measurement results were compared with theoretically calculated values of electron range. (author)

  20. Analysis and modification of blue sapphires from Rwanda by ion beam techniques

    Science.gov (United States)

    Bootkul, D.; Chaiwai, C.; Tippawan, U.; Wanthanachaisaeng, B.; Intarasiri, S.

    2015-12-01

    Blue sapphire is categorised in a corundum (Al2O3) group. The gems of this group are always amazed by their beauties and thus having high value. In this study, blue sapphires from Rwanda, recently came to Thai gemstone industry, are chosen for investigations. On one hand, we have applied Particle Induced X-ray Emission (PIXE), which is a highly sensitive and precise analytical technique that can be used to identify and quantify trace elements, for chemical analysis of the sapphires. Here we have found that the major element of blue sapphires from Rwanda is Al with trace elements such as Fe, Ti, Cr, Ga and Mg as are commonly found in normal blue sapphire. On the other hand, we have applied low and medium ion implantations for color improvement of the sapphire. It seems that a high amount of energy transferring during cascade collisions have altered the gems properties. We have clearly seen that the blue color of the sapphires have been intensified after nitrogen ion bombardment. In addition, the gems were also having more transparent and luster. The UV-Vis-NIR measurement detected the modification of their absorption properties, implying of the blue color increasing. Here the mechanism of these modifications is postulated and reported. In any point of view, the bombardment by using nitrogen ion beam is a promising technique for quality improvement of the blue sapphire from Rwanda.

  1. Radiation Response of Rhombohedral Oxides

    International Nuclear Information System (INIS)

    Devanathan, R.; Weber, W.J.; Mitchell, J.N.; Sickafus, K.E.; Nastasi, M.

    1997-05-01

    The radiation response of three rhombohedral oxides, namely, sapphire (α-Al 2 O 3 ), ilmenite (FeTiO 3 ), and geikielite (MgTiO 3 ), has been examined by irradiating electron transparent samples with 1 MeV Kr(+) and 1.5 MeV Xe(+)ions. The microstructural changes during irradiation were observed in situ in a high-voltage electron microscope using electron diffraction and microscopy. The irradiation conditions were designed to minimize beam heating and chemical effects due to the implanted ion. Of the three oxides studied, ilmenite is the most susceptible to radiation-induced amorphization while sapphire is the least susceptible. In all three materials, the critical temperature for amorphization was below 300 K indicating good room temperature resistance to amorphization by energetic beams

  2. Effect of electron beam irradiation on pollen mother cells of gladiolus 'chaoji'

    International Nuclear Information System (INIS)

    Zhang Zhiwei; Wang Dan; Wen Fangping Zhang Xiaoxue

    2008-01-01

    In order to test the effects of various doses of electron beam on M1 generation pollen mother cells (PMC), the corm of gladiolus 'chaoji' was irradiated by electron beam with 3 MeV energy. Some abnormalities of meiosis of pollen mother cells were studied and the bands of protein subunit were analyzed by SDS-PAGE for the irradiated corm. The genetic damage at meiosis of gladiolus is observed, and the types of chromosomal aberrations are laggard chromosomes, chromosomal bridge, chromosome outside nucleus, unequal separation of chromosome, micronuclei and so on. Some trispores and paraspores are viewed at tetraspore period. The shape and size of the microspores vary in some treated materials, and most of microspores display little volume. The statistic of aberrance types and frequencies in PMCs show that aberrance types are chromosome outside nucleus and micronuclei mostly. The SDS-PAGE result shows that protein expression of M1 generation pollen is obviously changed by electron beam irradiation. Low dose of electron beam has obvious effects, and some special proteins subunit bands are found among varieties of irradiation dosage respectively. The protein bands are absent at the dose more than 160 Gy compared to low dose of electron beam. The results indicate that electron beam irradiation is an effective way for gladiolus breeding. (authors)

  3. Effects of electron-beam irradiation on HDPE/Brazil nut shell fiber composite

    Energy Technology Data Exchange (ETDEWEB)

    Ferreira, Maiara S.; Sartori, Mariana N.; Oliveira, Rene R.; Moura, Esperidiana A.B., E-mail: maiara.sferreira@gmail.com [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil)

    2013-07-01

    In recent years, research on the replacement of synthetic fibers by natural fibers as reinforcement in thermoplastic composites has increased dramatically due to the advantages of natural fibers, such as low density, low cost, environmental appeal and recyclability. In the present work, the influence of electron-beam irradiation on mechanical properties of HDPE and HDPE/Brazil Nut Shell (Bertholletia excelsa) fiber compositive was investigated. The HDPE composite reinforced with 5% or 10%, by weight of Brazil nut shell fiber powder with particle sizes equal or smaller than 250 μm were obtained by extrusion, using a twin screw extruder. The materials were irradiated at 200 kGy using a 1.5 MeV electron beam accelerator, at room temperature in presence of air. The irradiated and non-irradiated specimens tests samples were submitted to mechanical and thermo-mechanical tests, scanning electron microscopy (SEM), X-Ray diffraction (XRD) and sol-gel analysis and the correlation between their properties was discussed. The results showed significant changes in HDPE mechanical and thermo-mechanical properties due to Brazil nut shell fibers addition and electron-beam irradiation. The surface of the cryo fractured composite samples irradiated showed important visual changes which suggest a better fiber-matrix interfacial adhesion, due to irradiation treatment. These results showed that it is possible to get interesting property gains by using waste from renewable sources instead of the traditional ones and electron-beam radiation treatment. (author)

  4. Effects of electron-beam irradiation on HDPE/Brazil nut shell fiber composite

    International Nuclear Information System (INIS)

    Ferreira, Maiara S.; Sartori, Mariana N.; Oliveira, Rene R.; Moura, Esperidiana A.B.

    2013-01-01

    In recent years, research on the replacement of synthetic fibers by natural fibers as reinforcement in thermoplastic composites has increased dramatically due to the advantages of natural fibers, such as low density, low cost, environmental appeal and recyclability. In the present work, the influence of electron-beam irradiation on mechanical properties of HDPE and HDPE/Brazil Nut Shell (Bertholletia excelsa) fiber compositive was investigated. The HDPE composite reinforced with 5% or 10%, by weight of Brazil nut shell fiber powder with particle sizes equal or smaller than 250 μm were obtained by extrusion, using a twin screw extruder. The materials were irradiated at 200 kGy using a 1.5 MeV electron beam accelerator, at room temperature in presence of air. The irradiated and non-irradiated specimens tests samples were submitted to mechanical and thermo-mechanical tests, scanning electron microscopy (SEM), X-Ray diffraction (XRD) and sol-gel analysis and the correlation between their properties was discussed. The results showed significant changes in HDPE mechanical and thermo-mechanical properties due to Brazil nut shell fibers addition and electron-beam irradiation. The surface of the cryo fractured composite samples irradiated showed important visual changes which suggest a better fiber-matrix interfacial adhesion, due to irradiation treatment. These results showed that it is possible to get interesting property gains by using waste from renewable sources instead of the traditional ones and electron-beam radiation treatment. (author)

  5. Electron irradiation effect on bubble formation and growth in a sodium borosilicate glass

    International Nuclear Information System (INIS)

    Chen, X.; Birtcher, R. C.; Donnelly, S. E.

    2000-01-01

    In this study, the authors studied simultaneous and intermittent electron irradiation effects on bubble growth in a simple sodium borosilicate glass during Xe ion implantation at 200 C. Simultaneous electron irradiation increases the average bubble size in the glass. This enhanced diffusion is also shown by the migration of Xe from bubbles into the matrix when the sample is irradiated by an electron beam after the Xe implantation

  6. Determination of the electron beam irradiated area

    International Nuclear Information System (INIS)

    Zarbout, K.; Kallel, A.; Moya, G.

    2005-01-01

    The investigation of the charge trapping properties of non-conductive materials open the way to an understanding of the degradation of their characteristics due to ageing and catastrophic phenomena, such as breakdown, which originate from the rapid relaxation of trapped charges. The defects, in particular those introduced during the fabrication process, are responsible for the charging phenomena which limit the technological performances and the reliability of these materials. Several characterisation techniques have been developed and among them the one which uses the electron beam of the scanning Electron Microscope (SEM). The study of the charge trapping properties in non-conductive solids by using the electron beam of a SEM requires the knowledge of the current beam and injected charges densities. These densities depend on the irradiated sample area. For this reason, we report in this work two experimental procedures allowing a direct determination of the irradiated area size by the incident defocused beam. The first is based on the charging effect of oxide surfaces (SiO2, MgO, AL2O3) and the second is derived from the electron beam lithography technique. The latter procedure constitutes a convenient experimental method

  7. Spectroscopic properties for identifying sapphire samples from Ban Bo Kaew, Phrae Province, Thailand

    Science.gov (United States)

    Mogmued, J.; Monarumit, N.; Won-in, K.; Satitkune, S.

    2017-09-01

    Gemstone commercial is a high revenue for Thailand especially ruby and sapphire. Moreover, Phrae is a potential gem field located in the northern part of Thailand. The studies of spectroscopic properties are mainly to identify gemstone using advanced techniques (e.g. UV-Vis-NIR spectrophotometry, FTIR spectrometry and Raman spectroscopy). Typically, UV-Vis-NIR spectrophotometry is a technique to study the cause of color in gemstones. FTIR spectrometry is a technique to study the functional groups in gem-materials. Raman pattern can be applied to identify the mineral inclusions in gemstones. In this study, the natural sapphires from Ban Bo Kaew were divided into two groups based on colors including blue and green. The samples were analyzed by UV-Vis-NIR spectrophotometer, FTIR spectrometer and Raman spectroscope for studying spectroscopic properties. According to UV-Vis-NIR spectra, the blue sapphires show higher Fe3+/Ti4+ and Fe2+/Fe3+ absorption peaks than those of green sapphires. Otherwise, green sapphires display higher Fe3+/Fe3+ absorption peaks than blue sapphires. The FTIR spectra of both blue and green sapphire samples show the absorption peaks of -OH,-CH and CO2. The mineral inclusions such as ferrocolumbite and rutile in sapphires from this area were observed by Raman spectroscope. The spectroscopic properties of sapphire samples from Ban Bo Kaew, Phrae Province, Thailand are applied to be the specific evidence for gemstone identification.

  8. Radiation safety of gamma and electron irradiation facilities

    International Nuclear Information System (INIS)

    1992-01-01

    There are currently some 160 gamma irradiation facilities and over 600 electron beam facilities in operation throughout virtually all Member States of the IAEA. The most widespread uses of these facilities are for the sterilization of medical and pharmaceutical products, the preservation of foodstuffs, polymer synthesis and modification, and the eradication of insect infestation. The safety record of this industry has been very good. Nevertheless, there is a potential for accidents with serious consequences. Gamma and electron beam facilities produce very high dose rates during irradiation, so that a person accidentally present in the irradiation chamber can receive a lethal dose within minutes or seconds. Precautions against uncontrolled entry must therefore be taken. Furthermore, gamma irradiation facilities contain large amounts of radioactivity and if the mechanism for retracting the source is damaged, the source may remain exposed, inhibiting direct access to carry out remedial work. Contamination can result from corroded or damaged sources, and decontamination can be very expensive. These aspects clearly indicate the need to achieve a high degree of safety and reliability in the facilities. This can be accomplished by effective quality control together with careful design, manufacture, installation, operation and decommissioning. The guidance in this Safety Series publication is intended for competent authorities responsible for regulating the use of radiation sources as well as the manufacturers, suppliers, installers and users of gamma and electron beam facilities. 20 refs, 6 figs

  9. Optical and electrical properties of some electron and proton irradiated polymers

    International Nuclear Information System (INIS)

    Mishra, R.; Tripathy, S.P.; Sinha, D.; Dwivedi, K.K.; Ghosh, S.; Khathing, D.T.; Mueller, M.; Fink, D.; Chung, W.H.

    2000-01-01

    Ion beam treatment studies have been carried out to investigate the potential for improvements in conductivity properties of the polymers Polytetrafluroethylene (PTFE), Polyimide (PI), Polyethyleneterepthalate (PET) and Polypropylene (PP), after 2 MeV electron and 62 MeV proton irradiation. The shift in optical absorption edges as observed by UV-VIS spectra of the irradiated polymers has been correlated to the optical band-gap using Tauc's expression. A decrease in the optical band-gap has been observed in irradiated PP and PTFE, but no considerable change was found for the optical band-gaps of PET and PI. Further AC conductivity measurements confirmed an increase in conductivity in electron irradiated PP

  10. Analysis and modification of blue sapphires from Rwanda by ion beam techniques

    Energy Technology Data Exchange (ETDEWEB)

    Bootkul, D., E-mail: mo_duangkhae@hotmail.com [Department of General Science - Gems & Jewelry, Faculty of Science, Srinakharinwirot University, Bangkok 10110 (Thailand); Chaiwai, C.; Tippawan, U. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Wanthanachaisaeng, B. [Gems Enhancement Research Unit, Faculty of Gems, Burapha University, Chanthaburi Campus, Chanthaburi 22170 (Thailand); Intarasiri, S., E-mail: saweat@gmail.com [Science and Technology Research Institute, Chiang Mai University, Chiang Mai 50200 (Thailand)

    2015-12-15

    Highlights: • Ion beam analysis is an effective method for detecting trace elements. • Ion beam treatment is able to improve optical and color appearances of the blue sapphire from Rwanda. • These alternative methods can be extended to jewelry industry for large scale application. - Abstract: Blue sapphire is categorised in a corundum (Al{sub 2}O{sub 3}) group. The gems of this group are always amazed by their beauties and thus having high value. In this study, blue sapphires from Rwanda, recently came to Thai gemstone industry, are chosen for investigations. On one hand, we have applied Particle Induced X-ray Emission (PIXE), which is a highly sensitive and precise analytical technique that can be used to identify and quantify trace elements, for chemical analysis of the sapphires. Here we have found that the major element of blue sapphires from Rwanda is Al with trace elements such as Fe, Ti, Cr, Ga and Mg as are commonly found in normal blue sapphire. On the other hand, we have applied low and medium ion implantations for color improvement of the sapphire. It seems that a high amount of energy transferring during cascade collisions have altered the gems properties. We have clearly seen that the blue color of the sapphires have been intensified after nitrogen ion bombardment. In addition, the gems were also having more transparent and luster. The UV–Vis–NIR measurement detected the modification of their absorption properties, implying of the blue color increasing. Here the mechanism of these modifications is postulated and reported. In any point of view, the bombardment by using nitrogen ion beam is a promising technique for quality improvement of the blue sapphire from Rwanda.

  11. Clarification of leachate from reclaimed ground by electron beam irradiation

    International Nuclear Information System (INIS)

    Yamazaki, Masao; Sawai, Teruko; Shimokawa, Toshinari; Sawai, Takeshi

    1985-01-01

    To decompose organic matters such as humic acid and fulvous acid in the leachate from reclaimed ground, an electron beam irradiation technique was examined because of availability of higher dose rate than a 60 Co γ-ray source. This paper describes results of the above-mentioned preliminary examination. Test water was collected from No.15 dumping site at the Tokyo Bay. Irradiation sample was prepared by filtration with a filter and decarbonation with sulfuric acid. Fulvous acid solution by eliminating humic acid was also served for the examination. Electron beam irradiation of the sample solution was made with a Van de Graaf accelerator by 1.5 MeV, 140 Gy/sec of irradiation condition and with a dynamitron by 2.0 MeV, 25 kGy/pass of the condition. It was clarified that oxygen bubbling velocity during the irradiation did not affect much for the decrease rate of total organic matters (TOC) within 0.5 to 3.0 1/min of an experimental condition. As for radiation doses and TOC decrease, TOC was decreased much for lower dose rate irradiation (Van de Graaf accelerator), lower initial TOC concentration, or addition of hydrogen peroxide. For the combined treatment of radiation and flocculation to aim at irradiation dose decrease, fulvous acid solution was served for the test. Lower dose irradiation with a 60 Co source showed better TOC elimination and it was concluded that combination with flocculation was effective for the dose reduction. It was also found experimentally that TOC decrease behavior by the both radiation source was different due to temperature effect and further study should be made for the development of the practical electron beam irradiation technique. (Takagi, S.)

  12. Gamma and electron beam irradiation effects on SiR-EPDM blends

    Directory of Open Access Journals (Sweden)

    R. Deepalaxmi

    2014-07-01

    Full Text Available Ethylene Propylene Diene Monomer (EPDM is widely used as Cable Insulation Material (CIM due to its good mechanical strength. Silicone Rubber (SiR is used in high temperature environments due to its good di-electric properties/hydrophobicity. The blending of SiR-EPDM may result in the improvement in their specific properties. The SiR-EPDM blend of equal composition (50:50 was prepared. When such blends are used as Cable Insulation Materials (CIM, they should perform their safety functions throughout their installed life in Nuclear Power Plants (NPP. The CIM will be exposed to Gamma irradiation at the installed locations. The short time accelerated testing was carried out, in order to forecast long-term performance of CIM. Electron beam irradiation is widely used in cable manufacturing industries to improve the performance of the polymeric materials. In the current study, on the purpose to investigate the effect of gamma/electron beam irradiation on the 50–50 composition of SiR-EPDM blend, blend was exposed to 25 Mrad dose of gamma/electron beam irradiation. The electrical and mechanical parameters like Volume Resistivity (VRY, Surface Resistivity (SRY, Tensile Strength (TS, Elongation at Break (EB, Hardness (H of the virgin, gamma/electron beam irradiated blends were determined as per ASTM/IEC standards. The nature of degradation was investigated using Fourier Transform Infrared Spectroscopy (FTIR. To determine the elemental composition of the materials at the surface, Energy Dispersive X-ray Analysis (EDAX has been done. Scanning Electron Microscopy (SEM analysis has been done to study the morphological changes. The occurrence of cross-linking is found to be the mechanism for ageing in gamma/electron beam irradiated SiR-EPDM blends.

  13. Evaluation of electron beam irradiation for disinfection of turmeric fingers

    Energy Technology Data Exchange (ETDEWEB)

    Yasumoto, Kyoden; Fujino, Masayuki; Supriyadi (Kyoto Univ., Uji (Japan). Research Inst. for Food Science); Suzuki, Tetsuya; Hayashi, Toru

    1991-08-01

    Turmeric finger as one of the most popular spices has been widely used for food manufacturing. However, it has also been a major cause of bacterial infestation of food materials especially in curry, ham and sausage manufacturing. In this study decontamination of bacteria in turmeric finger by electron beam irradiation was evaluated by comparing with several other decontamination methods: i.e., boiling, microwave irradiation, treatment by twin screw extruder and gamma-ray irradiation. By estimation of colony counting on nutrient agar plate, turmeric finger without any treatment gave total viable cell at 10{sup 8}/g. Turmeric finger which was irradiated by electron beam at 10 kGy dose dramatically reduced thermotolerant cell population below self restriction level (<1000/g), which has been required by food hygiene law. The same level of sterilization effect was obtained only by gamma-ray irradiation at 10 kGy and 20 kGy. On the other hand, although treatment through twin screw extruder slightly reduced bacterial numbers, neither boiling nor microwave irradiation gave sufficient decontamination effect on turmeric fingers. (author).

  14. Evaluation of electron beam irradiation for disinfection of turmeric fingers

    International Nuclear Information System (INIS)

    Yasumoto, Kyoden; Fujino, Masayuki; Supriyadi; Suzuki, Tetsuya; Hayashi, Toru.

    1991-01-01

    Turmeric finger as one of the most popular spices has been widely used for food manufacturing. However, it has also been a major cause of bacterial infestation of food materials especially in curry, ham and sausage manufacturing. In this study decontamination of bacteria in turmeric finger by electron beam irradiation was evaluated by comparing with several other decontamination methods: i.e., boiling, microwave irradiation, treatment by twin screw extruder and gamma-ray irradiation. By estimation of colony counting on nutrient agar plate, turmeric finger without any treatment gave total viable cell at 10 8 /g. Turmeric finger which was irradiated by electron beam at 10 kGy dose dramatically reduced thermotolerant cell population below self restriction level (<1000/g), which has been required by food hygiene law. The same level of sterilization effect was obtained only by gamma-ray irradiation at 10 kGy and 20 kGy. On the other hand, although treatment through twin screw extruder slightly reduced bacterial numbers, neither boiling nor microwave irradiation gave sufficient decontamination effect on turmeric fingers. (author)

  15. Evaluation of electron beam irradiation for disinfection of turmeric fingers

    International Nuclear Information System (INIS)

    Yasumoto, K.; Fujino, M.; Supriyadi; Suzuki, T.; Hayashi, T.

    1991-01-01

    Turmeric finger as one of the most popular spices has been widely used for food manufacturing. However, it has also been a major cause of bacterial infestation of food materials especially in curry, ham and sausage manufacturing. In this study decontamination of bacteria in turmeric finger by electron beam irradiation was evaluated by comparing with several other decontamination methods: i.e., boiling, microwave irradiation, treatment by twin screw extruder and gamma-ray irradiation. By estimation of colony counting on nutrient agar plate, turmeric finger without any treatment gave total viable cell at 10 8 /g. Turmeric finger which was irradiated by electron beam at 10kGy dose dramatically reduced thermotolerant cell population below self restriction level (<1000/g), which has been required by food hygiene law. The same level of sterilization effect was obtained only by gamma-ray irradiation at 10kGy and 20kGy. On the other hand, although treatment through twin screw extruder slightly reduced bacterial numbers, neither boiling nor microwave irradiation gave sufficient decontamination effect on turmeric fingers

  16. Ti:Sapphire waveguide lasers

    NARCIS (Netherlands)

    Pollnau, Markus; Pashinin, P.P.; Grivas, C.; Laversenne, L.; Wilkinson, J.S.; Eason, R.W.; Shepherd, D.P.

    2007-01-01

    Titanium-doped sapphire is one of the most prominent laser materials and is appreciated for its excellent heat conductivity and broadband gain spectrum, allowing for a wide wavelength tunability and generation of ultrashort pulses. As one of the hardest materials, it can also serve as a model system

  17. Reliability improvement methods for sapphire fiber temperature sensors

    Science.gov (United States)

    Schietinger, C.; Adams, B.

    1991-08-01

    Mechanical, optical, electrical, and software design improvements can be brought to bear in the enhancement of fiber-optic sapphire-fiber temperature measurement tool reliability in harsh environments. The optical fiber thermometry (OFT) equipment discussed is used in numerous process industries and generally involves a sapphire sensor, an optical transmission cable, and a microprocessor-based signal analyzer. OFT technology incorporating sensors for corrosive environments, hybrid sensors, and two-wavelength measurements, are discussed.

  18. A study on chemical composition of spices irradiated by electron beam

    International Nuclear Information System (INIS)

    Ding Lianzhong; Ding Shiyue; Zhu Yan; Li Yixu; Zhu Songmei

    1998-01-01

    Quantitative changes in common organic acids and inorganic acids from spices irradiated by electron beam were studied by Dionex-4000i ion chromatograph. The results showed that the acids content of either chilli or the five-spice powder irradiated with a dose of 9.94 kGy did not undergo significant changes in comparison with the control samples. The flavour composition in the five-spice powder irradiated by electron beam was also determined by Finnigan MAT-8230B gas chromatograph-mass spectrometer, and compared to the results by heating treatment (120 deg. C, 30min). The comparison indicated that the effect of electron beam treatment on flavour composition was less than that of heating

  19. A study on chemical composition of spices irradiated by electron beam

    Energy Technology Data Exchange (ETDEWEB)

    Lianzhong, Ding [Inst. of Applied Technical Physics of Zhejiang Province (China); Shiyue, Ding; Yan, Zhu; Yixu, Li [Testing Technology Inst. of Zhejiang Province (China)

    1992-02-01

    Quantitative changes in common organic acids and inorganic acids from spices irradiated by electron beam were studied by Dionex-4000 ion Chromatograph. The results showed that the acids content of either achilli or the five-spice powder irradiated with a dose of 9.94 kGy did not undergo significant changes in comparison with the control samples. The flavour composition in the five-spice powder irradiated by electron beam was also determined by Finnigan MAT-8230B gas chromatograph-mass spectrometer, and compared to the results by heating treatment (120 C, 30 min). The comparison indicated that the effect of electron beam treatment on flavour composition was less than that of heating.

  20. Degradation behaviour of fiber reinforced plastic under electron beam irradiation

    International Nuclear Information System (INIS)

    Sonoda, Katsumi; Yamamoto, Yasushi; Hashimoto, Osamu

    1989-01-01

    Various mechanical properties of four kinds of glass fiber-reinforced plastics irradiated with electron beams were examined at three temperatures; room temperature, 123 K and 77 K. Dynamic viscoelastic properties were measured, and fractography by means of scanning electron microscopy was observed in order to clarify degradation behaviour. A considerable decrease in interlaminar shear strength (ILSS) at room temperature was observed above 60 MGy. On the other hand, the three-point bending strength at 77 K and the ILSS at 123 K decreased with increasing irradiation. Fractography reveals that the degradation of the interface layer between matrix resin and fiber plays an important role in the strength reduction at 123 K and 77 K. These findings suggest that the interface between matrix resin and fiber loses its bondability at 123 K arid 77 K after electron beam irradiation. (author)

  1. High-rate sputter deposition of NiAl on sapphire fibers

    Energy Technology Data Exchange (ETDEWEB)

    Reichert, K.; Martinez, C.; Cremer, R.; Neuschuetz, D. [Lehrstuhl fuer Theoretische Huettenkunde, RWTH Aachen, Aachen (Germany)

    2002-07-01

    Once the fiber-matrix bonding has been optimized to meet the different requirements during fabrication and operation of the later composite component, sapphire fiber reinforced NiAl will be a potential candidate to substitute conventional superalloys as structural material for gas turbine blades. To improve the composite fabrication process, a direct deposition of the intermetallic matrix material onto hBN coated sapphire fibers prior to the consolidation of the fiber-matrix composite is proposed. It is believed that this will simplify the fabrication process and prevent pore formation during the diffusion bonding. In addition, the fiber volume fraction can be quite easily adjusted by varying the NiAl coating thickness. For this, a high-rate deposition of NiAl is in any case necessary. It has been achieved by a pulsed DC magnetron sputtering of combined Al-Ni targets with the fibers rotating between the two facing cathodes. The obtained nickel aluminide coatings were analyzed as to structure and composition by means of X-ray (GIXRD) as well as electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS), respectively. The morphology of the NiAl coatings was examined by SEM. (orig.)

  2. Effect of electron beam irradiation on the viscosity of carboxymethylcellulose solution

    International Nuclear Information System (INIS)

    Choi, Jong-il; Lee, Hee-Sub; Kim, Jae-Hun; Lee, Kwang-Won; Chung, Young-Jin; Byun, Myung-Woo; Lee, Ju-Woon

    2008-01-01

    In this study, the effects of an electron beam irradiation on the viscosity of a carboxymethylcellulose (CMC) solution were investigated. The viscosity of the CMC solution was decreased with an increase in the irradiation dose. Interestingly, the extent of the degradation of the CMC was found to decrease with an increase of the CMC concentration in the solution. The change of the average molar mass confirmed the decrease in the viscosity due to the degradation of the polymer. The energy of the electron beam also affected the degradation of the CMC. Lower degradation of the CMC was obtained with a decreasing electron beam energy due to its lower penetration. Addition of vitamin C as a radical scavenger to the solution and an irradiation at -70 deg. C were shown to be moderately effective in preventing a decrease in the viscosity of the solution by irradiation.

  3. Effect of electron beam irradiation on the viscosity of carboxymethylcellulose solution

    Science.gov (United States)

    Choi, Jong-il; Lee, Hee-Sub; Kim, Jae-Hun; Lee, Kwang-Won; Chung, Young-Jin; Byun, Myung-Woo; Lee, Ju-Woon

    2008-12-01

    In this study, the effects of an electron beam irradiation on the viscosity of a carboxymethylcellulose (CMC) solution were investigated. The viscosity of the CMC solution was decreased with an increase in the irradiation dose. Interestingly, the extent of the degradation of the CMC was found to decrease with an increase of the CMC concentration in the solution. The change of the average molar mass confirmed the decrease in the viscosity due to the degradation of the polymer. The energy of the electron beam also affected the degradation of the CMC. Lower degradation of the CMC was obtained with a decreasing electron beam energy due to its lower penetration. Addition of vitamin C as a radical scavenger to the solution and an irradiation at -70 °C were shown to be moderately effective in preventing a decrease in the viscosity of the solution by irradiation.

  4. Effect of electron beam irradiation on the viscosity of carboxymethylcellulose solution

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Jong-il [Advanced Radiation Technology Institute, Korea Atomic Energy Research Institute, 1266 Sinjeong-dong, Jeongeup 580-185 (Korea, Republic of); Lee, Hee-Sub [Advanced Radiation Technology Institute, Korea Atomic Energy Research Institute, 1266 Sinjeong-dong, Jeongeup 580-185 (Korea, Republic of); Department of Food and Nutrition, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Kim, Jae-Hun [Advanced Radiation Technology Institute, Korea Atomic Energy Research Institute, 1266 Sinjeong-dong, Jeongeup 580-185 (Korea, Republic of); Lee, Kwang-Won [Department of Orthopaedic Surgery, Eulji University School of Medicine, Daejeon 302-799 (Korea, Republic of); Chung, Young-Jin [Department of Food and Nutrition, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Byun, Myung-Woo [Advanced Radiation Technology Institute, Korea Atomic Energy Research Institute, 1266 Sinjeong-dong, Jeongeup 580-185 (Korea, Republic of); Lee, Ju-Woon [Advanced Radiation Technology Institute, Korea Atomic Energy Research Institute, 1266 Sinjeong-dong, Jeongeup 580-185 (Korea, Republic of)], E-mail: sjwlee@kaeri.re.kr

    2008-12-15

    In this study, the effects of an electron beam irradiation on the viscosity of a carboxymethylcellulose (CMC) solution were investigated. The viscosity of the CMC solution was decreased with an increase in the irradiation dose. Interestingly, the extent of the degradation of the CMC was found to decrease with an increase of the CMC concentration in the solution. The change of the average molar mass confirmed the decrease in the viscosity due to the degradation of the polymer. The energy of the electron beam also affected the degradation of the CMC. Lower degradation of the CMC was obtained with a decreasing electron beam energy due to its lower penetration. Addition of vitamin C as a radical scavenger to the solution and an irradiation at -70 deg. C were shown to be moderately effective in preventing a decrease in the viscosity of the solution by irradiation.

  5. Defects in electron irradiated vitreous SiO2 probed by positron annihiliation

    International Nuclear Information System (INIS)

    Uedono, Akira; Tanigawa, Shoichiro; Kawano, Takao; Itoh, Hisayoshi

    1994-01-01

    Defects in 3 MeV electron irradiated vitreous SiO 2 (v-SiO 2 ) were probed by the positron annihilation technique. For unirradiated v-SiO 2 specimens, almost all positrons were found to annihilate from positronium (Ps) states. This high formation probability of Ps was attributed to the trapping of positrons by open-space defects. The formation probability of Ps was decreased by the electron irradiation. The observed inhibition of the Ps formation was attributed to the trapping of positrons by point defects introduced and/or activated by the irradiation. From measurements of the lifetime distribution of Ps, it was found that, by the electron irradiation, the mean size of open-space defects was decreased and the size distribution of such defects was broadened. (Author)

  6. Polarization of electron-beam irradiated LDPE films: contribution to charge generation and transport

    Science.gov (United States)

    Banda, M. E.; Griseri, V.; Teyssèdre, G.; Le Roy, S.

    2018-04-01

    Electron-beam irradiation is an alternative way to generate charges in insulating materials, at controlled position and quantity, in order to monitor their behaviour in regard to transport phenomena under the space charge induced electric field or external field applied. In this study, low density polyethylene (LDPE) films were irradiated by a 80 keV electron-beam with a flux of 1 nA cm‑2 during 10 min in an irradiation chamber under vacuum conditions, and were then characterized outside the chamber using three experimental methods. The electrical behaviour of the irradiated material was assessed by space charge measurements using the pulsed electro-acoustic (PEA) method under dc stress. The influence of the applied electric field polarity and amplitude has been tested in order to better understand the charge behaviour after electron-beam irradiation. Fourier transform infra-red spectroscopy (FTIR) and photoluminescence (PL) measurements were performed to evaluate the impact of the electron beam irradiation, i.e. deposited charges and energy, on the chemical structure of the irradiated samples. The present results show that the electrical behaviour in LDPE after irradiation is mostly driven by charges, i.e. by physical process functions of the electric field, and that changes in the chemical structure seems to be mild.

  7. The effect of composition, electron irradiation and quenching on ...

    Indian Academy of Sciences (India)

    The ionic conductivity at room temperature exhibits a characteristic double peak for the composition = 20 and 70. Both electron beam irradiation and quenching at low temperature have resulted in an increase in conductivity by 1–2 orders of magnitude. The enhancement of conductivity upon irradiation and quenching is ...

  8. Influence of electron irradiation on the structural and thermal properties of silk fibroin films

    Energy Technology Data Exchange (ETDEWEB)

    Asha, S.; Sangappa,; Sanjeev, Ganesh, E-mail: ganeshanjeev@rediffmail.com [Department of Studies in Physics, Mangalore University, Mangalagangotri, Mangalore - 574 199 (India)

    2015-06-24

    Radiation-induced changes in Bombyx mori silk fibroin (SF) films under electron irradiation were investigated and correlated with dose. SF films were irradiated in air at room temperature using 8 MeV electron beam in the range 0-150 kGy. Various properties of the irradiated SF films were studied using X-ray diffraction (XRD), Differential Scanning Calorimetry (DSC) and Thermogravimetric Analysis (TGA). Electron irradiation was found to induce changes in the physical and thermal properties, depending on the radiation dose.

  9. Structural characterization of ZnO films grown by molecular beam epitaxy on sapphire with MgO buffer

    International Nuclear Information System (INIS)

    Pecz, B.; El-Shaer, A.; Bakin, A.; Mofor, A.-C.; Waag, A.; Stoemenos, J.

    2006-01-01

    The structural characteristics of the ZnO film grown on sapphire substrate using a thin MgO buffer layer were studied using transmission electron microscopy and high-resolution x-ray diffraction. The growth was carried out in a modified plasma-molecular beam epitaxy system. The observed misfit dislocations were well confined at the sapphire overgrown interface exhibiting domain matching epitaxy, where the integral multiples of lattice constants match across the interface. The main extended defects in the ZnO film were the threading dislocations having a mean density of 4x10 9 cm -2 . The formation of the MgO buffer layer as well as the ZnO growth were monitored in situ by reflection high-energy electron diffraction. The very thin ∼1 nm, MgO buffer layer can partially interdiffuse with the ZnO as well as react with the Al 2 O 3 substrate forming an intermediate epitaxial layer having the spinel (MgO/Al 2 O 3 ) structure

  10. The prophylactic effect of neck irradiation combined with intra-oral electron beam irradiation for early tongue cancer

    International Nuclear Information System (INIS)

    Kawamori, Jiro; Kamata, Rikisaburo; Sanuki, Eiichi

    1993-01-01

    Between 1967 and 1988, 102 patients with Stage T1-2N0 squamous cell carcinoma of the tongue were treated with uneven fractional irradiation therapy (intra-oral electron beam irradiation with and without prophylactic ipsilateral upper neck irradiation at the Dept. of Radiology, Nihon University School of Medicine. Of 102 primary lesions, 89 cases were controlled with this therapy. In this study, these 89 cases were investigated in order to analyze the prophylactic effect of upper neck irradiation. Of the 89 patients, 42 received only intra-oral electron beam irradiation, while the remaining 47 received a combination of intra-oral electron beam irradiation and prophylactic irradiation to the ipsilateral upper neck. Twenty three of the 89 (25.8%) developed metastasis to the neck after the radiotherapy. A breakdown of these 23 cases reveals that 3/21 (14.3%) received 40-50 Gy to the neck, 9/26 (34.6%) received 20-40 Gy to the neck, and 11/42 (26.2%) received no irradiation to the neck (p<0.05 between first and second groups, and between first and third groups). The neck metastasis was classified into one of three categories based on the region in which it first appeared (ipsilateral upper neck, ipsilateral lower neck or contralateral neck). The first metastasis was seen in the ipsilateral upper neck, in the ipsilateral lower neck and in the contralateral neck in 17, 4 and 2 patients, respectively. In 1/19 who had received 40-50 Gy, in 5/21 who had received 20-40 Gy and in 11/42 who had not received neck irradiation the first metastasis appeared in the ipsilateral upper neck. The five year survival rate was 94%, 75% and 85% in the patients receiving 40-50 Gy, 20-40 Gy and no neck irradiation, respectively. These results suggest that prophylactic irradiation of 40-50 Gy to the ipsilateral upper neck might decrease the incidence of neck metastasis and slightly prolong survival time. (author)

  11. Advanced Oxidation Treatment of Drinking Water and Wastewater Using High-energy Electron Beam Irradiation

    Directory of Open Access Journals (Sweden)

    Abbas Behjat

    2007-03-01

    Full Text Available Application of electron beam as a strong oxidation method for disinfection of drinking water and wastewater has been investigated. Drinking water samples were prepared from wells in rock zones in Yazd Province. Wastewater samples were collected from Yazd Wastewater Treatment Plant. Samples were irradiated by 10 MeV electron beam accelerator at Yazd Radiation Processing Center. The irradiation dose range varied from 0.5-5 kGy. Biological parameters and microbial agents such as aerobic mesophiles and coliforms including E. coli count before and after irradiation versus irradiation dose were obtained using MPN method. The data obtained from irradiated water and wastewater were compared with un-irradiated (control samples. The results showed a removal of 90% of all microorganisms at irradiation doses below 5 kGy, suggesting electron beam irradiation as an effective method for disinfection of wastewater.

  12. The effect of electron beam irradiation on lipid oxidation in sausages

    Directory of Open Access Journals (Sweden)

    atefeh yousefi

    2017-09-01

    Full Text Available Introduction: Irradiation treatment is one of the best techniques to extend the shelf-life of meat, without emerging the nutritional properties and sensory quality of irradiated meat products.  However electron -beam  may cause transformations in foods but has been known as to the most easily-applied irradiation technique in food industries. Electron-beam irradiation is an environment friendly, low cost and time effective alternative to other decontamination technologies. Lipid oxidation could produce of irradiated meat. This study aimed at evaluating the state of lipid oxidation of irradiated sausages. Its findings could help the control, improve food safety and quality properties to food industries. Methods: Sausages were purchased in a local supermarket, minced sausages blended for thiobarbituric acid reactive substances (TBARS analysis and divided into 25 g pieces. The samples including one control group and four case groups. Packaged sausage were exposed at doses of 0 (control, 1, 2, 3 and 5 kGy and analyzed on various days 0, 5, 10 and 30. Results: Thiobarbituric acid reactive substances (TBARS has increased as time goes on (P<0.05. A significant relationship was observed on different Doses. But, the maximum of TBARS was observed in 3 kGy. Conclusion: Utilizing of Electron-beam irradiation in low doses does not have significant difference on lipid oxidation. Irradiating of meat products by addition of antioxidants can minimize or avoid the development of rancidity.

  13. Clinical implementation of total skin electron irradiation treatment with a 6 MeV electron beam in high-dose total skin electron mode

    International Nuclear Information System (INIS)

    Lucero, J. F.; Rojas, J. I.

    2016-01-01

    Total skin electron irradiation (TSEI) is a special treatment technique offered by modern radiation oncology facilities, given for the treatment of mycosis fungoides, a rare skin disease, which is type of cutaneous T-cell lymphoma [1]. During treatment the patient’s entire skin is irradiated with a uniform dose. The aim of this work is to present implementation of total skin electron irradiation treatment using IAEA TRS-398 code of practice for absolute dosimetry and taking advantage of the use of radiochromic films.

  14. Clinical implementation of total skin electron irradiation treatment with a 6 MeV electron beam in high-dose total skin electron mode

    Energy Technology Data Exchange (ETDEWEB)

    Lucero, J. F., E-mail: fernando.lucero@hoperadiotherapy.com.gt [Universidad Nacional de Costa Rica, Heredia (Costa Rica); Hope International, Guatemala (Guatemala); Rojas, J. I., E-mail: isaac.rojas@siglo21.cr [Centro Médico Radioterapia Siglo XXI, San José (Costa Rica)

    2016-07-07

    Total skin electron irradiation (TSEI) is a special treatment technique offered by modern radiation oncology facilities, given for the treatment of mycosis fungoides, a rare skin disease, which is type of cutaneous T-cell lymphoma [1]. During treatment the patient’s entire skin is irradiated with a uniform dose. The aim of this work is to present implementation of total skin electron irradiation treatment using IAEA TRS-398 code of practice for absolute dosimetry and taking advantage of the use of radiochromic films.

  15. Stress relaxation under cyclic electron irradiation

    International Nuclear Information System (INIS)

    Bystrov, L.N.; Reznitskij, M.E.

    1990-01-01

    The kinetics of deformation process in a relaxating sample under 2 MeV electron cyclic irradiation was studied experimentally. The Al-Mg alloys with controllable and different (in dislocation density precipitate presence and their character) structure were used in experiments. It was established that after the beam was switched on the deformation rate increased sharply and then, during prolonged irradiation, in a gradual manner. After the switching-off the relaxation rate decreases by jumps up to values close to extrapolated rates of pre-radiation relaxation. The exhibition of these effects with radiation switching-off and switchin-on is dependent on the initial rate of thermal relaxation, the test temperature, the preliminary cold deformation and the dominating deformation dislocation mechanism. The preliminary cold deformation and test temperature elevation slightly decrease the effect of instantaneous relaxation acceleration with the irradiation switch-on. 17 refs., 5 figs

  16. Irradiation of aluminium alloy materials with electron beam

    International Nuclear Information System (INIS)

    Konno, Osamu; Masumoto, Kazuyoshi

    1982-01-01

    It is a theme with a room for discussion to employ the stainless steel composed of longer half-life materials for the vacuum system of accelerators, from the viewpoint of radiation exposure. Therefore, it is desirable to use aluminium of shorter half-life in place of stainless steel. As a result of investigation on the above theme in the 1.2 GeV electron linac project in Tohoku University, it has been concluded that aluminium alloy vacuum chambers can reduce exposure dose by about one or two figures as compared with stainless steel ones. Of course, aluminium alloy contains trace amounts of Mg, Si, Ti, Cr, Mn, Fe, Zn, Cu and others. Therefore, four kinds of aluminium alloy considered to be usable have been examined for induced radioactivity by electron beam irradiation. Stainless steel SUS 304 has been also irradiated for comparison. Radiation energy has been 30 MeV and 200 MeV. When stainless steel and aluminium alloy were compared, aluminium alloy was very effective for reducing surface dose in low energy irradiation. In 200 MeV irradiation, the dose ratio of aluminium alloy to stainless steel became 1/30 to 1/100 after one week, though the dose difference between these two materials became smaller in 100 days or more after irradiation. If practical inspection and repair are implemented during the period from a few days to one week after shutdown, the aluminium alloy is preferable for exposure dose reduction even in high energy irradiation. (Wakatsuki, Y.)

  17. Effect of electron beam irradiation on fisheries water

    International Nuclear Information System (INIS)

    Sarala Selambakkannu; Khomsaton Abu Bakar; Jamaliah Shariff; Suhairi Alimon

    2012-01-01

    This paper studies about water obtained from fish pond of fisheries research centre. Usual water quality parameters such as pH, COD, Turbidity and Ammonia content were analyzed before and after irradiation. Electron beam irradiation was used to irradiate the water with the dose 100 kGy, 200 kGy and 300 kGy. Only high dose was applied on this water as only a limited amount of samples was supplied. All the parameters indicated a slight increase after irradiation except for the ammonia content, which showed a gradual decrease as irradiation dose increases. Sample condition was changed before irradiation in order to obtain more effective results in the following batch. The water sample from fisheries was diluted with distilled water to the ratio of 1:1.This was followed with irradiation at 100 kGy, 200 kGy and 300 kGy. The results still showed an increase in all parameters after irradiation except for ammonia content. For the following irradiation batch, the pH of the sample was adjusted to pH 4 and pH 8 before irradiation. For this sample the irradiation dose selected was only 100 kGy. A higher value of ammonia was observed for the sample with pH 4 after irradiation. Other parameters were almost the same as the first two batches. (author)

  18. In-situ synthesis of Ag nanoparticles by electron beam irradiation

    International Nuclear Information System (INIS)

    Gong, Jiangfeng; Liu, Hongwei; Jiang, Yuwen; Yang, Shaoguang; Liao, Xiaozhou; Liu, Zongwen; Ringer, Simon

    2015-01-01

    Ag nanoparticles were synthesized by electron beam irradiation in the transmission electron microscope chamber at room temperature and the growth mechanism was explored in detail. The sizes of the Ag nanoparticles are controlled by the electron beam current density. Two nanoparticle growth stages were identified. The first growth stage was dominated by the discharging effect, while the second stage was controlled by the heating effect. The nanoparticle synthesis method should be applicable to the synthesis of other metallic nanoparticles. - Highlights: • Ag nanoparticles were synthesized by electron beam irradiation in the transmission electron microscope chamber. • The sizes of the Ag nanoparticles are controlled by the electron beam current density. • The growth mechanism was studied, two growth stages were confirmed. • The first growth stage was dominated by the discharging effect, and the second stage was controlled by the heating effect.

  19. Electron spin resonance of gamma, electron, neutron and fission fragments irradiated K2SO4

    International Nuclear Information System (INIS)

    Kamali, J.; Walton, G.N.

    1985-01-01

    The electron spin resonance (ESR) of K 2 SO 4 irradiated by γ, electron, neutron and fission fragments has been investigated. The ESR spectra are attributed mainly to the formation of SO 3 - , SO 4 - , SO 2 - , and O 3 - radical ions. The most intense radical ion observed was due to the SO 3 - , and the other radicals were relatively much lower in intensity. Thermal annealing showed a significant decrease in the concentration of radical ions. The concentration of SO 3 - was measured in γ-irradiated K 2 SO 4 and K 2 SO 4 containing fission fragments. In fission fragments irradiated K 2 SO 4 , the G-value observed for SO 3 - radical formation was about eight times higher than that of γ-irradiated K 2 SO 4 . This was attributed to the high LET (Linear Energy Transfer) of the fission fragments. (author)

  20. Electron-beam-irradiation-induced crystallization of amorphous solid phase change materials

    Science.gov (United States)

    Zhou, Dong; Wu, Liangcai; Wen, Lin; Ma, Liya; Zhang, Xingyao; Li, Yudong; Guo, Qi; Song, Zhitang

    2018-04-01

    The electron-beam-irradiation-induced crystallization of phase change materials in a nano sized area was studied by in situ transmission electron microscopy and selected area electron diffraction. Amorphous phase change materials changed to a polycrystalline state after being irradiated with a 200 kV electron beam for a long time. The results indicate that the crystallization temperature strongly depends on the difference in the heteronuclear bond enthalpy of the phase change materials. The selected area electron diffraction patterns reveal that Ge2Sb2Te5 is a nucleation-dominated material, when Si2Sb2Te3 and Ti0.5Sb2Te3 are growth-dominated materials.

  1. Post-irradiation degradation of DNA in electron and neutron-irradiated E. coli B/r; the effect of the radiation sensitizer metronidazole

    Energy Technology Data Exchange (ETDEWEB)

    Cramp, W A; George, A M; Howlett, J [Hammersmith Hospital, London (UK). M.R.C. Cyclotron Unit

    1976-04-01

    Suspensions of E.coli B/r were irradiated under aerobic and anoxic conditions with electrons (7 to 8 MeV, 2 and 20 krad/min, MRC linear accelerator), or with neutrons (average energy 7.5 MeV, 2 krad/min, MRC cyclotron) in an investigation of the effects of the radiosensitizer, metronidazole (Flagyl, 5 or 10 mM) on survival and DNA degradation. These results are compared with those for another electron affinic radiosensitizer, indane trione. Survival studies yielded enhancement ratios, for anoxic irradiation only, of 1.7 (5mM) and 1.9 (10mM) for electrons, and 1.2 (5mM and 10mM) for neutrons. Unlike indane trione, metronidazole had no pronounced inhibitory effect on post-irradiation DNA degradation, either when incubated with the bacteria before irradiation or when present during irradiation. When present under anoxic conditions of irradiation with electrons, some enhancement of degradation was observed. DNA degradation was reduced at higher doses, with a pronounced maxiumum effect, for neutrons as well as for electrons. Metronidazole allowed this degradation to continue and showed some sensitizing action, but did not prevent the decrease in total degradation at high doses. It is therefore difficult to correlate DNA degradation with cell-depth.

  2. Neutron irradiation damage in Al2O3 and Y2O3

    International Nuclear Information System (INIS)

    Clinard, F.W. Jr.; Bunch, J.M.; Ranken, W.A.

    1975-01-01

    Two ceramics under consideration for use in fusion reactors, Al 2 O 3 and Y 2 O 3 , were irradiated in the EBR-II fission reactor at 650, 875, and 1025 0 K to fluences between 2 and 6 x 10 21 n/cm 2 (E greater than 0.1 MeV). Samples evaluated include sapphire, Lucalox, alumina, Y 2 O 3 , and Y 2 O 3 -10 percent ZrO 2 (Yttralox). All Al 2 O 3 specimens swelled significantly (1 to 3 percent), with most of the growth observed in sapphire along the c-axis at the higher temperatures. Al 2 O 3 samples irradiated at 875 to 1025 0 K contained a high density of small aligned ''pores''. Irradiated Y 2 O 3 -based ceramics exhibited dimensional stability and a defect content consisting primarily of unresolved damage and/or dislocation loops. The behavior of these ceramics under irradiation is discussed, and the relevance of fission neutron damage studies to fusion reactor applications is considered. (auth)

  3. Positron lifetime measurements on electron irradiated amorphous alloys

    International Nuclear Information System (INIS)

    Moser, P.; Hautojaervi, P.; Chamberod, A.; Yli-Kauppila, J.; Van Zurk, R.

    1981-08-01

    Great advance in understanding the nature of point defects in crystalline metals has been achieved by employing positron annihilation technique. Positrons detect vacancy-type defects and the lifetime value of trapped positrons gives information on the size of submicroscopic vacancy aglomerates and microvoids. In this paper it is shown that low-temperature electron irradiations can result in a considerable increase in the positron lifetimes in various amorphous alloys because of the formation of vacancy-like defects which, in addition of the pre-existing holes, are able to trap positrons. Studied amorphous alloys were Fe 80 B 20 , Pd 80 Si 20 , Cu 50 Ti 50 , and Fe 40 Ni 40 P 14 B 6 . Electron irradiations were performed with 3 MeV electrons at 20 K to doses around 10 19 e - /cm 2 . After annealing positron lifetime spectra were measured at 77 K

  4. Space-charge-limited currents in electron-irradiated dielectrics

    International Nuclear Information System (INIS)

    Nunes de Oliveira, L.; Gross, B.

    1975-01-01

    This paper develops the theory of steady-state currents generated in a dielectric placed between positively or negatively biased electrodes and irradiated with a partially penetrating electron beam. The dielectric is divided into an irradiated region (IR), which extends from the electrode of incidence to the extrapolated range of the beam, and a nonirradiated region (NIR). In the IR the primary beam generates an electron-hole plasma. Its end plane acts as a virtual electrode embedded in the dielectric. Currents are space-charge limited in the NIR and Ohmic in the IR which is characterized by a uniform radiation-induced conductivity. Depending on the polarity of the electrode bias, electrons or holes are drawn from the IR into the NIR. The theory correctly predicts an apparent threshold effect for the inset of steady-state currents: the current amplitudes remain small as long as the electron range is smaller than half the sample thickness, and increase strongly only afterwards. Calculated current curves for different beam energies are in satisfactory agreement with experimental results. The role of the electron beam as a virtual electrode is discussed

  5. (100) faceted anion voids in electron irradiated fluorite

    International Nuclear Information System (INIS)

    Johnson, E.

    1979-01-01

    High fluence electron irradiation of fluorite crystals in the temperature range 150 to 320 K results in formation of a simple cubic anion void superlattice. Above 320 K the damage structure changes to a random distribution of large [001] faceted anion voids. This voidage behaviour, similar to that observed in a range of irradiated metals, is discussed in terms points defect rather than conventional colour centre terminology. (Auth.)

  6. Dielectric properties of electron irradiated PbZrO 3 thin films

    Indian Academy of Sciences (India)

    The present paper deals with the study of the effects of electron (8 MeV) irradiation on the dielectric and ferroelectric properties of PbZrO3 thin films grown by sol–gel technique. The films were (0.62 m thick) subjected to electron irradiation using Microtron accelerator (delivered dose 80, 100, 120 kGy). The films were well ...

  7. Void formation in NiTi shape memory alloys by medium-voltage electron irradiation

    International Nuclear Information System (INIS)

    Schlossmacher, P.; Stober, T.

    1995-01-01

    In-situ electron irradiation experiments of NiTi shape memory alloys, using high-voltage transmission electron microscopes, result in amorphization of the intermetallic compound. In all of these experiments high-voltages more than 1.0 MeV had to be applied in order to induce the crystalline-to-amorphous transformation. To their knowledge no irradiation effects of medium-voltage electrons of e.g. 0.5 MeV have been reported in the literature. In this contribution, the authors describe void formation in two different NiTi shape memory alloys, resulting from in-situ electron irradiation, using a 300 kV electron beam in a transmission electron microscope. First evidence is presented that void formation is correlated with the total oxygen content of the alloys

  8. Electron beam irradiation crosslinked hydrogels based on tyramine conjugated gum tragacanth.

    Science.gov (United States)

    Tavakol, Moslem; Dehshiri, Saeedeh; Vasheghani-Farahani, Ebrahim

    2016-11-05

    In the present study, electron beam irradiation was applied to prepare a chemically crosslinked hydrogel based on tyramine conjugated gum tragacanth. Then, the gel content, swelling behavior and cytotoxicity of the hydrogels were evaluated. The gel content of the hydrogels was in the range of 75-85%. Equilibrium swelling degree of the hydrogels decreased from 51 to 14 with increasing polymer concentration and irradiation dose. Moisture retention capability of the hydrogels after 5h incubation at 37°C was in the range of 45-52 that is comparable with of commercial hydrogels. The cytotoxicity analysis showed the good biocompatibility of hydrogels. These results indicated that electron beam irradiation is a promising method to prepare chemically crosslinked tyramine conjugated gum tragacanth hydrogels for biomedical applications. Also, the versatility of electron beam irradiation for crosslinking of a variety of polymers possessing tyramine groups was demonstrated. Copyright © 2016 Elsevier Ltd. All rights reserved.

  9. Nonlinearity Mechanism and Correction of Sapphire Fiber Temperature Sensor on Blackbody Cavity

    Directory of Open Access Journals (Sweden)

    Tiejun Cao

    2014-06-01

    Full Text Available Based on the principle of blackbody radiation, sapphire optic fiber temperature sensor has been more widely used in recent years, and its temperature range is between 800 ~ 2000 oC, and the response time is in 10-2 magnitude, and transient temperature measurement can be high precision in harsh environments. Nonlinear constraints on sapphire fiber temperature sensor affect the accuracy and stability of the sensor. In order to solve the nonlinear problems which exist in the measurement, at first, the sapphire fiber optic temperature sensor temperature measurement principle and nonlinear generation mechanism are studied; secondly piecewise linear interpolation and spline interpolation linearization algorithm is designed with combining the nonlinear characteristics of sapphire optical fiber temperature sensor, and the program is designed on its linear and associated signal processing. Experimental results show that a good linearization of sapphire fiber optic temperature sensor can been achieved in this method.

  10. 'Sapphire' project. Objectives and outcomes

    International Nuclear Information System (INIS)

    Shkolnik, V.S.

    1997-01-01

    'Sapphire' Project contains the US assistance in purchasing/exporting 600 kg of highly enriched uranium from the State Holding Association 'Ulba' Uranium Plant, and compensatory equipment and service deliveries under the mutually concerted list. The compensatory payments were as separate projects in conformity with Kazakhstan enterprises needs, participation quota of which was determined by the Kazakhstan Government. Realization Milestones. Activity on Separate Projects: - basic 'Sapphire' part includes medical projects; - Kazakhstan Services were equipped with computers by the American International Development Agency for Taxation Services of Kazakhstan and by US Department of Energy for Monitoring preparation of Kazakhstan Atomic energy Agency. - 7 Research projects are being realized via the International Science and Technological Center; - export control. It has been realized as the equipment delivery under the concerted list; - equipping of nuclear materials accounting and control system at 'Ulba' Association enterprises

  11. Vulcanization of rubber mixtures by simultaneous electron beam and microwave irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Martin, D. E-mail: martin@ifin.nipne.ro; Ighigeanu, D.; Mateescu, E.; Craciun, G.; Ighigeanu, A

    2002-08-01

    The comparative results obtained by applying separate electron beam (EB) irradiation and simultaneous EB and microwave (MW) irradiation to vulcanization of rubber mixtures based on natural rubber and polybutadiene rubber with carbon black are presented. In the absence of MW, EB irradiation doses of 200-250 kGy are required in order to obtain a higher vulcanization degree. The irradiation doses as well as irradiation times were markedly diminished, from 2 to 6 times, by simultaneous EB and MW irradiation.

  12. The impact of irradiation induced specimen charging on microanalysis in a scanning electron microscope

    International Nuclear Information System (INIS)

    Stevens-Kalceff, M.A.

    2003-01-01

    Full text: It is necessary to assess and characterize the perturbing influences of experimental probes on the specimens under investigation. The significant influence of electron beam irradiation on poorly conducting materials has been assessed by a combination of specialized analytical scanning electron and scanning probe microscopy techniques including Cathodoluminescence Microanalysis and Kelvin Probe Microscopy. These techniques enable the defect structure and the residual charging of materials to be characterized at high spatial resolution. Cathodoluminescence is the non-incandescent emission of light resulting from the electron irradiation. CL microscopy and spectroscopy in a Scanning Electron Microscope (SEM) enables high spatial resolution and high sensitivity detection of defects in poorly conducting materials. Local variations in the distribution of defects can be non-destructively characterized with high spatial (lateral and depth) resolution by adjusting electron beam parameters to select the specimen micro-volume of interest. Kelvin Probe Microscopy (KPM) is a Scanning Probe Microscopy technique in which long-range Coulomb forces between a conductive atomic force probe and the specimen enable the surface potential to be characterized with high spatial resolution. A combination of Kelvin Probe Microscopy (KPM) and Cathodoluminescence (CL) microanalysis has been used to characterize ultra pure silicon dioxide exposed to electron irradiation in a Scanning Electron Microscope. Silicon dioxide is an excellent model specimen with which to investigate charging induced effects. It is a very poor electrical conductor, homogeneous and electron irradiation produces easily identifiable surface modification which enables irradiated regions to be easily and unambiguously located. A conductive grounded coating is typically applied to poorly conducting specimens prior to investigation in an SEM to prevent deflection of the electron beam and surface charging, however

  13. Frequency-doubled diode laser for direct pumping of Ti:sapphire lasers

    DEFF Research Database (Denmark)

    Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

    2012-01-01

    . However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20...... fs are measured. These results open the opportunity of establishing diode laser pumped Ti:sapphire lasers for e.g. biophotonic applications like retinal optical coherence tomography or pumping of photonic crystal fibers for CARS microscopy.......A single-pass frequency doubled high-power tapered diode laser emitting nearly 1.3 W of green light suitable for direct pumping of Ti:sapphire lasers generating ultrashort pulses is demonstrated. The pump efficiencies reached 75 % of the values achieved with a commercial solid-state pump laser...

  14. Electron Spin Resonance Shift and Linewidth Broadening of Nitrogen-Vacancy Centers in Diamond as a Function of Electron Irradiation Dose

    OpenAIRE

    Kim, Edwin; Acosta, Victor M.; Bauch, Erik; Budker, Dmitry; Hemmer, Philip R.

    2009-01-01

    A high-nitrogen-concentration diamond sample was subject to 200-keV electron irradiation using a transmission electron microscope. The optical and spin-resonance properties of the nitrogen-vacancy (NV) color centers were investigated as a function of the irradiation dose up to 6.4\\times1021 e-/cm2. The microwave transition frequency of the NV- center was found to shift by up to 0.6% (17.1 MHz) and the linewidth broadened with increasing electron-irradiation dose. Unexpectedly, the measured ma...

  15. Growth rate of dislocation loop in Fe-Ni-Cr alloy under Kr+ ion and electron irradiation

    International Nuclear Information System (INIS)

    Kimoto, T.; Allen, C.W.; Rehn, L.E.

    1991-10-01

    In order to examine the effect of irradiating particle species on the growth rate of radiation-induced dislocation loops, a solution-annealed Fe-25Ni-15Cr-0.02C alloy was irradiated at 723 K first by 1.5 MeV Kr + ions for 2520 sec, then by 1.5 MeV Kr + ions and 1.0 MeV electrons simultaneously for 780 sec, and finally by 1.0 MeV electrons for 780 sec with the HVEM-Tandem Facility in Argonne National Laboratory. The calculated damage rate by 1.5 MeV Kr + ions was 5.8 x 10 -4 dpa/s, and that by 1.0 MeV electrons was 1 x 10 -4 dpa/s. The growth rate of a dislocation loop located at the center of the specimen was 7 x 10 -3 nm/s for the Kr + ion irradiation, 4 x 10 -2 nm/s for the simultaneous Kr + and electron irradiation, and (2--3) x 10 -2 nm/s for the electron irradiation. This implies that the electron irradiation is about 19 times more effective in the growth of radiation-induced dislocation loops than the Kr + ion irradiation. The dislocation loop growth rate under the simultaneous Kr + and electron irradiation is higher than the sum of the growth rates under the individual Kr + and electron irradiations. 5 refs., 4 figs

  16. Comparison of initial damage rates using neutron and electron irradiations

    International Nuclear Information System (INIS)

    Goldstone, J.A.R.

    1978-08-01

    The purpose of this experiment was twofold: (1) The number of interstitials that pin dislocations was studied as a function of neutron energy. (2) By comparison with electron irradiations on the sample, a correlation between the predicted and measured numbers of defects was found. All irradiations were performed on the same high purity copper sample. The sample was machined in the form of a cantilever beam with a flexural resonant frequency of 770 Hz. Changes in Young's modulus at constant strain amplitude were monitored continuously through changes in the resonant frequency of the sample. These changes in the modulus can be related to the number of pinning points added to dislocation lines, which are in turn related to the number of free interstitials produced. Neutron energy dependence experiments were done from 2 to 24 MeV on the copper sample and at 14 MeV on a gold sample. By equating pinning rates from electron and neutron irradiations and using the free interstitial production rate obtained from electron irradiations, an estimate of the free interstitial production cross section for neutrons of 2 to 24 MeV was made

  17. Ionic liquids influence on the surface properties of electron beam irradiated wood

    Energy Technology Data Exchange (ETDEWEB)

    Croitoru, Catalin [“Transilvania” University of Brasov, Product Design and Environment Department, 29 Eroilor Str., 500036, Brasov (Romania); Patachia, Silvia, E-mail: st.patachia@unitbv.ro [“Transilvania” University of Brasov, Product Design and Environment Department, 29 Eroilor Str., 500036, Brasov (Romania); Doroftei, Florica; Parparita, Elena; Vasile, Cornelia [“Petru Poni” Institute of Macromolecular Chemistry, Physical Chemistry of Polymers Department, 41A Gr. Ghica Voda Alley, Iasi (Romania)

    2014-09-30

    Highlights: • Wood veneers impregnated with three imidazolium-based ionic liquids and irradiated with electron beam were studied by FTIR-ATR, SEM/EDX, AFM, contact angle and image analysis. • ILs preserve the surface properties of the wood (surface energy, roughness, color) upon irradiation, in comparison with the reference wood, but the surface composition is changed by treatment with IL-s, mainly with 1-butyl-3-methylimidazolium tetrafluoroborate. • Under electron beam irradiation covalent bonding of the imidazolium moiety to wood determines a higher resistance to water penetration and spreading on the surface. - Abstract: In this paper, the influence of three imidazolium-based ionic liquids (1-butyl-3-methylimidazolium tetrafluoroborate, 1-butyl-3-methylimidazolium hexafluorophosphate and 1-hexyl-3-methylimidazolium chloride) on the structure and surface properties of sycamore maple (Acer pseudoplatanus) veneers submitted to electron beam irradiation with a dose of 50 kGy has been studied by using Fourier transform infrared spectroscopy, as well as image, scanning electron microscopy/SEM/EDX, atomic force microscopy and contact angle analysis. The experimental results have proven that the studied ionic liquids determine a better preservation of the structural features of wood (cellulose crystallinity index and lignin concentration on the surface) as well as some of surface properties such as surface energy, roughness, color upon irradiation with electron beam, in comparison with the reference wood, but surface composition is changed by treatment with imidazolium-based ionic liquids mainly with 1-butyl-3-methylimidazolium tetrafluoroborate. Also, under electron beam irradiation covalent bonding of the imidazolium moiety to wood determines a higher resistance to water penetration and spreading on the surface.

  18. Optimizing Ti:Sapphire laser for quantitative biomedical imaging

    Science.gov (United States)

    James, Jeemol; Thomsen, Hanna; Hanstorp, Dag; Alemán Hérnandez, Felipe Ademir; Rothe, Sebastian; Enger, Jonas; Ericson, Marica B.

    2018-02-01

    Ti:Sapphire lasers are powerful tools in the field of scientific research and industry for a wide range of applications such as spectroscopic studies and microscopic imaging where tunable near-infrared light is required. To push the limits of the applicability of Ti:Sapphire lasers, fundamental understanding of the construction and operation is required. This paper presents two projects, (i) dealing with the building and characterization of custom built tunable narrow linewidth Ti:Sapphire laser for fundamental spectroscopy studies; and the second project (ii) the implementation of a fs-pulsed commercial Ti:Sapphire laser in an experimental multiphoton microscopy platform. For the narrow linewidth laser, a gold-plated diffraction grating with a Littrow geometry was implemented for highresolution wavelength selection. We demonstrate that the laser is tunable between 700 to 950 nm, operating in a pulsed mode with a repetition rate of 1 kHz and maximum average output power around 350 mW. The output linewidth was reduced from 6 GHz to 1.5 GHz by inserting an additional 6 mm thick etalon. The bandwidth was measured by means of a scanning Fabry Perot interferometer. Future work will focus on using a fs-pulsed commercial Ti:Sapphire laser (Tsunami, Spectra physics), operating at 80 MHz and maximum average output power around 1 W, for implementation in an experimental multiphoton microscopy set up dedicated for biomedical applications. Special focus will be on controlling pulse duration and dispersion in the optical components and biological tissue using pulse compression. Furthermore, time correlated analysis of the biological samples will be performed with the help of time correlated single photon counting module (SPCM, Becker&Hickl) which will give a novel dimension in quantitative biomedical imaging.

  19. Application of electron irradiation to food containers and packaging materials

    International Nuclear Information System (INIS)

    Ueno, Koji

    2010-01-01

    Problems caused by microbial contamination and hazardous chemicals have attracted much attention in the food industry. The number of systems such as hygienic management systems and Hazard Analysis Critical Control Point (HACCP) systems adopted in the manufacturing process is increasing. As manufacturing process control has become stricter, stricter control is also required for microbial control for containers and packaging materials (from disinfection to sterilization). Since safe and reliable methods for sterilizing food containers and packaging materials that leave no residue are required, electron beam sterilization used for medical equipment has attracted attention from the food industry. This paper describes an electron irradiation facility, methods for applying electron beams to food containers and packaging materials, and products irradiated with electron beams. (author)

  20. Effect of electron beam irradiation on the nutritional ingredient of Sciaenops ocellatus meat

    International Nuclear Information System (INIS)

    Zhang Chunfang; Yang Wenge; Xu Dalun; Shi Huidong

    2011-01-01

    The influences of electron beam irradiation and package pattern (vacuum or ordinary) on the nutritional ingredient of Sciaenops ocellatus meat were investigated. The results were summarized as follows: (1) Electron-beam irradiation dose had notable effect on the moisture content, but no significant impact on the content of ash, protein, lipid and total carbohydrate. Teh package pattern had no significant effect on the common nutrional composition of Sciaenops ocellatus meat. (2) Either package pattern or irradiation dose showed little influence on the total amino acids, delicious amino acid, EAA/TAA and EAA/NEAA of Sciaenops ocellatus meat. The first limiting amino acid of Sciaenops ocellatus meat changed from Met plus Cys to Val in virtue of electron beam irradiation. (3) Both irradiation dose and package pattern showed no difference to the total fatty acid content. But the irradiation dose had notable effect on the relative content of unsaturated fatty acid, polyunsaturated fatty acid and DHA. The vacuum-packaged group had less DHA loss than the ordinary-packaged group with the same absorbed dose, and low dose groups had less DHA loss than the high groups. As conclusion, combining with the bactericidal effect of electron beam irradiation to Sciaenops ocellatus meat, the recommended dose has been proposed to be 3-5 kGy. (authors)

  1. Synthesis of single-crystalline Al layers in sapphire

    International Nuclear Information System (INIS)

    Schlosser, W.; Lindner, J.K.N.; Zeitler, M.; Stritzker, B.

    1999-01-01

    Single-crystalline, buried aluminium layers were synthesized by 180 keV high-dose Al + ion implantation into sapphire at 500 deg. C. The approximately 70 nm thick Al layers exhibit in XTEM investigations locally abrupt interfaces to the single-crystalline Al 2 O 3 top layer and bulk, while thickness and depth position are subjected to variations. The layers grow by a ripening process of oriented Al precipitates, which at low doses exist at two different orientations. With increasing dose, precipitates with one out of the two orientations are observed to exist preferentially, finally leading to the formation of a single-crystalline layer. Al outdiffusion to the surface and the formation of spherical Al clusters at the surface are found to be competing processes to buried layer formation. The formation of Al layers is described by Rutherford Backscattering Spectroscopy (RBS), Cross-section transmission electron microscopy (XTEM) and Scanning electron microscopy (SEM) studies as a function of dose, temperature and substrate orientation

  2. Electron-irradiation induced changes in structural and magnetic properties of Fe and Co based metallic glasses

    Energy Technology Data Exchange (ETDEWEB)

    Kane, S.N., E-mail: kane_sn@yahoo.com [School of Physics, D.A. University, Khandwa Road Campus, Indore 452001 (India); Satalkar, M., E-mail: satalkar.manvi@gmail.com [School of Physics, D.A. University, Khandwa Road Campus, Indore 452001 (India); Ghosh, A.; Shah, M. [School of Physics, D.A. University, Khandwa Road Campus, Indore 452001 (India); Ghodke, N. [UGC-DAE CSR, University Campus, Khandwa Road, Indore 452001 (India); Pramod, R.; Sinha, A.K.; Singh, M.N.; Dwivedi, J. [Raja Ramanna Centre for Advanced Technology, P.O. CAT, Indore 452013 (India); Coisson, M.; Celegato, F.; Vinai, F.; Tiberto, P. [INRIM, Electromagnetism Division, Strada Delle Cacce 91, I-10135 TO (Italy); Varga, L.K. [RISSPO, Hungarian Academy of Sciences, P.O. Box 49, 1525 Budapest (Hungary)

    2014-12-05

    Highlights: • Enhancement of Ms by low electron irradiation dose in Fe-based alloy. • Variation of magnetic properties by electron irradiation induced ordered phase. • Electron irradiation alters TM-TM distance and, magnetic properties. - Abstract: Electron-irradiation induced changes in structural and, magnetic properties of Co{sub 57.6}Fe{sub 14.4}Si{sub 4.8}B{sub 19.2}Nb{sub 4}, Fe{sub 72}Si{sub 4.8}B{sub 19.2}Nb{sub 4} and, Co{sub 72}Si{sub 4.8}B{sub 19.2}Nb{sub 4} metallic glasses were studied using magnetic hysteresis and, synchrotron X-ray diffraction measurements. Results reveal composition dependent changes of magnetic properties in electron irradiated metallic glasses. A low electron irradiation dose (15 kGy) enhances saturation magnetization (up to 62%) in Fe-based alloy (Fe{sub 72}Si{sub 4.8}B{sub 19.2}Nb{sub 4}). Synchrotron XRD measurements reveal that electron irradiation transforms the amorphous matrix to a more ordered phase, accountable for changes in magnetic properties.

  3. Electron irradiation-induced destruction of carbon nanotubes in electron microscopes

    International Nuclear Information System (INIS)

    Molhave, Kristian; Gudnason, Sven Bjarke; Pedersen, Anders Tegtmeier; Clausen, Casper Hyttel; Horsewell, Andy; Boggild, Peter

    2007-01-01

    Observations of carbon nanotubes under exposure to electron beam irradiation in standard transmission electron microscope (TEM) and scanning electron microscope (SEM) systems show that such treatment in some cases can cause severe damage of the nanotube structure, even at electron energies far below the approximate 100 keV threshold for knock-on damage displacing carbon atoms in the graphene structure. We find that the damage we observe in one TEM can be avoided by use of a cold finger. This and the morphology of the damage imply that water vapour, which is present as a background gas in many vacuum chambers, can damage the nanotube structure through electron beam-induced chemical reactions. Though, the dependence on the background gas makes these observations specific for the presently used systems, the results demonstrate the importance of careful assessment of the level of subtle structural damage that the individual electron microscope system can do to nanostructures during standard use

  4. Positron annihilation in hydrogenated and electron-irradiated titanium alloys

    International Nuclear Information System (INIS)

    Mukashev, K.M.; Zaikin, Yu.A.

    2002-01-01

    Important information on hydrogen behavior in titanium can be obtained from studies of radiation damage in previously hydrogenated metal. For this purpose annealed titanium samples were hydrogenated at the temperature 500 deg. C during 1 hour. Then both the original annealed samples and hydrogenated samples were irradiated by 4 MeV electrons in the fluence range 3·10 7 -1·10 19 cm - 2 at the temperature 60 deg. C. It is known that electron irradiation in these conditions predominantly creates vacancy-type defects with an average radius R ν =0.81 Angstrom. It was stated that annihilation probability after electron irradiation of previously hydrogenated titanium samples always has some intermediate values between those characteristic for hydrogenated and irradiated states of previously annealed metal. This is a reason to suppose that radiation defects of the vacancy type in previously hydrogenated titanium combine with hydrogen atoms in favorable conditions of their partial ionization. The estimated value of the average radius for such a complex is R ν =1.1 Angstrom, that is higher than vacancy size but lower than an atom radius. No dose dependence of hydrogen interaction with radiation defects was observed in our experiments.The results of isochrone annealing of the materials under study have shown that the single annealing recovery stage with activation energy E a equal to 1.22 eV is observed in electron irradiated but not previously hydrogenated titanium in the temperature range 170-240 deg. C. Electron irradiation of the previously hydrogenated metal shifts beginning of the first recovery stage to the temperature about 225-230 deg. C and finishes near the temperature 330 deg. C. Therefore, the bound state vacancy-hydrogen in titanium is characterized by higher temperature range of dissociation and annealing with activation energy equal to 1.38 eV. However, subsequent measurements, of the angular distribution of annihilation photons (ADAP) have demonstrated

  5. Regeneration of used activated carbon by electron beam irradiation

    International Nuclear Information System (INIS)

    Arai, H.; Hosono, M.; Zhu, G.; Miyata, T.

    1992-01-01

    The adsorbing power of granular activated carbons which adsorbed sodium laurylsulfate were most effectively recovered by irradiation of high energy electron beams in nitrogen stream, and the carbon was hardly lost by irradiation. The regeneration was induced mainly by microscopic heating of adsorption sites. Regeneration was also confirmed by adsorption endotherms. Regeneration cost was tentatively evaluated. (author)

  6. Effects of keV electron irradiation on the avalanche-electron generation rates of three donors on oxidized silicon

    International Nuclear Information System (INIS)

    Sah, C.; Sun, J.Y.; Tzou, J.J.

    1983-01-01

    After keV electron beam irradiation of oxidized silicon, the avalanche-electron-injection generation rates and densities of the bulk compensating donor, the interface states, and the turnaround trap all increase. Heating at 200 0 C can anneal out these three donor-like traps, however, it cannot restore the generation rates back to their original and lower pre-keV electron irradiation values. The experimental results also indicate that all three traps may be related to the same mobile impurity species whose bonds are loosened by the keV electrons and then broken or released by the avalanche injected electrons

  7. Oxidation states of Fe and Ti in blue sapphire

    International Nuclear Information System (INIS)

    Wongrawang, P; Wongkokua, W; Monarumit, N; Thammajak, N; Wathanakul, P

    2016-01-01

    X-ray absorption near-edge spectroscopy (XANES) can be used to study the oxidation state of a dilute system such as transition metal defects in solid-state samples. In blue sapphire, Fe and Ti are defects that cause the blue color. Inter-valence charge transfer (IVCT) between Fe 2+ and Ti 4+ has been proposed to describe the optical color’s origin. However, the existence of divalent iron cations has not been thoroughly investigated. Fluorescent XANES is therefore employed to study K-edge absorptions of Fe and Ti cations in various blue sapphire samples including natural, synthetic, diffused and heat-treated sapphires. All the samples showed an Fe absorption edge at 7124 eV, corresponding to the Fe 3+ state; and Ti at 4984 eV, corresponding to Ti 4+ . From these results, we propose Fe 3+ -Ti 4+ mixed acceptor states located at 1.75 eV and 2.14 eV above the valence band of corundum, that correspond to 710 nm and 580 nm bands of UV–vis absorption spectra, to describe the cause of the color of blue sapphire. (paper)

  8. Immediate remediation of heavy metal (Cr(VI)) contaminated soil by high energy electron beam irradiation

    International Nuclear Information System (INIS)

    Zhang, Jing; Zhang, Guilong; Cai, Dongqing; Wu, Zhengyan

    2015-01-01

    Highlights: • An immediate remediation method for Cr(VI) contaminated soil (CCS) was developed. • High energy electron beam (HEEB) irradiation could reduce Cr(VI) in CCS to Cr(III). • This effect was attributed to electrons, hydrated electrons, and reductive radicals. • This remediation method was effective, environmentally friendly, and low-cost. - Abstract: This work developed an immediate and high-performance remediation method for Cr(VI) contaminated soil (CCS) using high energy electron beam (HEEB) irradiation. The result indicated that, compared with γ-ray irradiation, HEEB irradiation displayed a significant reduction efficiency on Cr(VI) in CCS to Cr(III) with substantially lower toxicity, which was mainly attributed to the reduction effects of electrons, hydrated electrons, and reductive radicals generated in the irradiation process of HEEB. This work could provide a one-step and effective method for the remediation of heavy metal contaminated soil (HMCS)

  9. Immediate remediation of heavy metal (Cr(VI)) contaminated soil by high energy electron beam irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jing; Zhang, Guilong [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences and Anhui Province, Hefei 230031 (China); Bioenergy Forest Research Center of State Forestry Administration, Hefei 230031 (China); Cai, Dongqing, E-mail: dqcai@ipp.ac.cn [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences and Anhui Province, Hefei 230031 (China); Bioenergy Forest Research Center of State Forestry Administration, Hefei 230031 (China); Wu, Zhengyan, E-mail: zywu@ipp.ac.cn [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences and Anhui Province, Hefei 230031 (China); Bioenergy Forest Research Center of State Forestry Administration, Hefei 230031 (China)

    2015-03-21

    Highlights: • An immediate remediation method for Cr(VI) contaminated soil (CCS) was developed. • High energy electron beam (HEEB) irradiation could reduce Cr(VI) in CCS to Cr(III). • This effect was attributed to electrons, hydrated electrons, and reductive radicals. • This remediation method was effective, environmentally friendly, and low-cost. - Abstract: This work developed an immediate and high-performance remediation method for Cr(VI) contaminated soil (CCS) using high energy electron beam (HEEB) irradiation. The result indicated that, compared with γ-ray irradiation, HEEB irradiation displayed a significant reduction efficiency on Cr(VI) in CCS to Cr(III) with substantially lower toxicity, which was mainly attributed to the reduction effects of electrons, hydrated electrons, and reductive radicals generated in the irradiation process of HEEB. This work could provide a one-step and effective method for the remediation of heavy metal contaminated soil (HMCS)

  10. Color center annealing and ageing in electron and ion-irradiated yttria-stabilized zirconia

    International Nuclear Information System (INIS)

    Costantini, Jean-Marc; Beuneu, Francois

    2005-01-01

    We have used X-band electron paramagnetic resonance (EPR) measurements at room-temperature (RT) to study the thermal annealing and RT ageing of color centers induced in yttria-stabilized zirconia (YSZ), i.e. ZrO 2 :Y with 9.5 mol% Y 2 O 3 , by swift electron and ion-irradiations. YSZ single crystals with the orientation were irradiated with 2.5 MeV electrons, and implanted with 100 MeV 13 C ions. Electron and ion beams produce the same two color centers, namely an F + -type center (singly ionized oxygen vacancy) and the so-called T-center (Zr 3+ in a trigonal oxygen local environment) which is also produced by X-ray irradiations. Isochronal annealing was performed in air up to 973 K. For both electron and ion irradiations, the defect densities are plotted versus temperature or time at various fluences. The influence of a thermal treatment at 1373 K of the YSZ single crystals under vacuum prior to the irradiations was also investigated. In these reduced samples, color centers are found to be more stable than in as-received samples. Two kinds of recovery processes are observed depending on fluence and heat treatment

  11. Tailoring crystallinity and configuration of silica nanotubes by electron irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Taguchi, Tomitsugu, E-mail: taguchi.tomitsugu@jaea.go.jp; Yamaguchi, Kenji

    2015-05-01

    Highlights: •Single-crystal SiO{sub 2} nanotubes were successfully synthesized for the first time. •The single-crystal SiO{sub 2} was α-crystobalite. •Desired area of single-crystal nanotube can be changed to amorphous by electron irradiation. •The configuration of nanotube can be controlled using the focused electron irradiation technique. -- Abstract: SiO{sub 2} nanotubes show potential in applications such as nanoscale electronic and optical devices, bioseparation, biocatalysis, and nanomedicine. As-grown SiO{sub 2} nanotubes in the previous studies always have an amorphous wall, and here we demonstrate the successful synthesis of single-crystal nanotubes for the first time by the heat treatment of SiC nanotubes at 1300 °C for 10 h under low-vacuum conditions. According to TEM observations, the single-crystal SiO{sub 2} was α-cristobalite. We also demonstrate that single-crystal SiO{sub 2} nanotubes can be transformed into amorphous SiO{sub 2} nanotubes by electron beam irradiation. Moreover, we synthesized a crystalline/amorphous SiO{sub 2} composite nanotube, in which crystalline and amorphous SiO{sub 2} coexisted in different localized regions. In addition, for biomedical applications such as drug delivery systems, controlling the configuration of the open end, the diameter, and capsulation of SiO{sub 2} nanotubes is crucial. We can also obturate, capsulate, and cut a SiO{sub 2} nanotube, as well as modify the inner diameter of the nanotube at a specific, nanometer-sized region using the focused electron beam irradiation technique.

  12. Influence of electron irradiation on hydrothermally grown zinc oxide single crystals

    Science.gov (United States)

    Lu, L. W.; So, C. K.; Zhu, C. Y.; Gu, Q. L.; Li, C. J.; Fung, S.; Brauer, G.; Anwand, W.; Skorupa, W.; Ling, C. C.

    2008-09-01

    The resistivity of hydrothermally grown ZnO single crystals increased from ~103 Ω cm to ~106 Ω cm after 1.8 MeV electron irradiation with a fluence of ~1016 cm-2, and to ~109 Ω cm as the fluence increased to ~1018 cm-2. Defects in samples were studied by thermally stimulated current (TSC) spectroscopy and positron lifetime spectroscopy (PLS). After the electron irradiation with a fluence of 1018 cm-2, the normalized TSC signal increased by a factor of ~100. A Zn vacancy was also introduced by the electron irradiation, though with a concentration lower than expected. After annealing in air at 400 °C, the resistivity and the deep traps concentrations recovered to the levels of the as-grown sample, and the Zn vacancy was removed.

  13. High energy electron irradiation effects on Ga-doped ZnO thin films for optoelectronic space applications

    Science.gov (United States)

    Serrao, Felcy Jyothi; Sandeep, K. M.; Bhat, Shreesha; Dharmaprakash, S. M.

    2018-03-01

    Gallium-doped ZnO (GZO) thin films of thickness 394 nm were prepared by a simple, cost-effective sol-gel spin coating method. The effect of 8 MeV electron beam irradiation with different irradiation doses ranging from 0 to 10 kGy on the structural, optical and electrical properties was investigated. Electron irradiation influences the changes in the structural properties and surface morphology of GZO thin films. X-ray diffraction analysis showed that the polycrystalline nature of the GZO films is unaffected by the high energy electron irradiation. The grain size and the surface roughness were found maximum for the GZO film irradiated with 10 kGy electron dosage. The average transmittance of GZO thin films decreased after electron irradiation. The optical band gap of Ga-doped ZnO films was decreased with the increase in the electron dosage. The electrical resistivity of GZO films decreased from 4.83 × 10-3 to 8.725 × 10-4 Ω cm, when the electron dosage was increased from 0 to 10 kGy. The variation in the optical and electrical properties in the Ga-doped ZnO thin films due to electron beam irradiation in the present study is useful in deciding their compatibility in optoelectronic device applications in electron radiation environment.

  14. Refractive index of r-cut sapphire under shock pressure range 5 to 65 GPa

    International Nuclear Information System (INIS)

    Cao, Xiuxia; Li, Jiabo; Li, Jun; Li, Xuhai; Xu, Liang; Wang, Yuan; Zhu, Wenjun; Meng, Chuanmin; Zhou, Xianming

    2014-01-01

    High-pressure refractive index of optical window materials not only can provide information on electronic polarizability and band-gap structure, but also is important for velocity correction in particle-velocity measurement with laser interferometers. In this work, the refractive index of r-cut sapphire window at 1550 nm wavelength was measured under shock pressures of 5–65 GPa. The refractive index (n) decreases linearly with increasing shock density (ρ) for shock stress above the Hugoniot elastic limit (HEL): n = 2.0485 (± 0.0197) − 0.0729 (± 0.0043)ρ, while n remains nearly a constant for elastic shocks. This behavior is attributed to the transition from elastic (below HEL) to heterogeneous plastic deformation (above HEL). Based on the obtained refractive index-density relationship, polarizability of the shocked sapphire was also obtained

  15. Wetting phenomena of Al-Cu alloys on sapphire below 800 deg. C

    International Nuclear Information System (INIS)

    Klinter, Andreas J.; Leon-Patino, Carlos A.; Drew, Robin A.L.

    2010-01-01

    Using a modified dispensed drop method, a decrease in contact angle on sapphire from pure aluminum to low-copper-containing Al alloys (7-12 wt.%) was found; with higher copper additions θ transitions to the non-wetting regime. Atomic force microscopy on long-term samples showed a significantly increased surface roughness beneath the drop. Using high-resolution transmission electron microscopy, the reaction product at the interface was identified as CuAl 2 O 4 for Al-7Cu and Al 2 O 3 for an Al-99.99 drop. X-ray photoelectron spectroscopy further confirmed the formation of CuAl 2 O 4 under CuAl 2 drops. Spinel formation is caused by reaction of the alloy with residual oxygen in the furnace that is transported along the interface as modeled by thermodynamic simulations. The formation of CuAl 2 O 4 causes the reduced σ sl and hence the improved wettability of sapphire by low-copper-containing alloys compared to pure aluminum. The main reason for the increase in θ with higher copper contents is the increasing σ lv of the alloy.

  16. Review and perspective: Sapphire optical fiber cladding development for harsh environment sensing

    Science.gov (United States)

    Chen, Hui; Buric, Michael; Ohodnicki, Paul R.; Nakano, Jinichiro; Liu, Bo; Chorpening, Benjamin T.

    2018-03-01

    The potential to use single-crystal sapphire optical fiber as an alternative to silica optical fibers for sensing in high-temperature, high-pressure, and chemically aggressive harsh environments has been recognized for several decades. A key technological barrier to the widespread deployment of harsh environment sensors constructed with sapphire optical fibers has been the lack of an optical cladding that is durable under these conditions. However, researchers have not yet succeeded in incorporating a high-temperature cladding process into the typical fabrication process for single-crystal sapphire fibers, which generally involves seed-initiated fiber growth from the molten oxide state. While a number of advances in fabrication of a cladding after fiber-growth have been made over the last four decades, none have successfully transitioned to a commercial manufacturing process. This paper reviews the various strategies and techniques for fabricating an optically clad sapphire fiber which have been proposed and explored in published research. The limitations of current approaches and future prospects for sapphire fiber cladding are discussed, including fabrication methods and materials. The aim is to provide an understanding of the past research into optical cladding of sapphire fibers and to assess possible material systems for future research on this challenging problem for harsh environment sensors.

  17. The SLAC polarized electron source

    International Nuclear Information System (INIS)

    Tang, H.; Alley, R.; Frisch, J.

    1995-06-01

    The SLAC polarized electron source employs a photocathode DC high voltage gun with a loadlock and a YAG pumped Ti:sapphire laser system for colliding beam experiments or a flash lamp pumped Ti:sapphire laser for fixed target experiments. It uses a thin, strained GaAs(100) photocathode, and is capable of producing a pulsed beam with a polarization of ≥80% and a peak current exceeding 10 A. Its operating efficiency has reached 99%. The physics and technology of producing high polarization electron beams from a GaAs photocathode will be reviewed. The prospects of realizing a polarized electron source for future linear colliders will also be discussed

  18. WEBEXPIR: Windowless target electron beam experimental irradiation

    International Nuclear Information System (INIS)

    Dierckx, Marc; Schuurmans, Paul; Heyse, Jan; Rosseel, Kris; Tichelen, Katrien Van; Nactergal, Benoit; Vandeplassche, Dirk; Aoust, Thierry; Abs, Michel; Guertin, Arnaud; Buhour, Jean-Michel; Cadiou, Arnaud; Abderrahim, Hamid Ait

    2008-01-01

    The windowless target electron beam experimental irradiation (WEBEXPIR) program was set-up as part of the MYRRHA/XT-ADS R and D effort on the spallation target design to investigate the interaction of a proton beam with a liquid lead-bismuth eutectic (LBE) free surface. In particular, possible free surface distortion or shockwave effects in nominal conditions and during sudden beam on/off transient situations, as well as possible enhanced evaporation were assessed. An experiment was conceived at the IBA TT-1000 Rhodotron, where a 7 MeV electron beam was used to simulate the high power deposition at the MYRRHA/XT-ADS LBE free surface. The geometry and the LBE flow characteristics in the WEBEXPIR set-up were made as representative as possible of the actual situation in the MYRRHA/XT-ADS spallation target. Irradiation experiments were carried out at beam currents of up to 10 mA, corresponding to 40 times the nominal beam current necessary to reproduce the MYRRHA/XT-ADS conditions. Preliminary analyses show that the WEBEXPIR free surface flow was not disturbed by the interaction with the electron beam and that vacuum conditions stayed well within the design specifications

  19. Electron irradiation induced deep centers in hydrothermally grown ZnO

    International Nuclear Information System (INIS)

    Fang, Z.-Q.; Claflin, B.; Look, D. C.; Farlow, G. C.

    2007-01-01

    An n-type hydrothermally grown ZnO sample becomes semi-insulating (ρ∼10 8 Ω cm) after 1-MeV electron-irradiation. Deep traps produced by the irradiation were studied by thermally stimulated current spectroscopy. The dominant trap in the as-grown sample has an activation energy of 0.24 eV and is possibly related to Li Zn acceptors. However, the electron irradiation introduces a new trap with an activation energy of 0.15 eV, and other traps of energy 0.30 and 0.80 eV, respectively. From a comparison of these results with positron annihilation experiments and density functional theory, we conclude that the 0.15-eV trap may be related to V Zn

  20. Ultrasensitive label-free detection of DNA hybridization by sapphire-based graphene field-effect transistor biosensor

    Science.gov (United States)

    Xu, Shicai; Jiang, Shouzhen; Zhang, Chao; Yue, Weiwei; Zou, Yan; Wang, Guiying; Liu, Huilan; Zhang, Xiumei; Li, Mingzhen; Zhu, Zhanshou; Wang, Jihua

    2018-01-01

    Graphene has attracted much attention in biosensing applications for its unique properties. Because of one-atom layer structure, every atom of graphene is exposed to the environment, making the electronic properties of graphene are very sensitive to charged analytes. Therefore, graphene is an ideal material for transistors in high-performance sensors. Chemical vapor deposition (CVD) method has been demonstrated the most successful method for fabricating large area graphene. However, the conventional CVD methods can only grow graphene on metallic substrate and the graphene has to be transferred to the insulating substrate for further device fabrication. The transfer process creates wrinkles, cracks, or tears on the graphene, which severely degrade electrical properties of graphene. These factors severely degrade the sensing performance of graphene. Here, we directly fabricated graphene on sapphire substrate by high temperature CVD without the use of metal catalysts. The sapphire-based graphene was patterned and make into a DNA biosensor in the configuration of field-effect transistor. The sensors show high performance and achieve the DNA detection sensitivity as low as 100 fM (10-13 M), which is at least 10 times lower than prior transferred CVD G-FET DNA sensors. The use of the sapphire-based G-FETs suggests a promising future for biosensing applications.

  1. Compositional changes in industrial hemp biomass (Cannabis sativa L.) induced by electron beam irradiation Pretreatment

    International Nuclear Information System (INIS)

    Sung, Yong Joo; Shin, Soo-Jeong

    2011-01-01

    The effects of electron beam irradiation on chemical decomposition of industrial hemp biomass were evaluated at doses of 150, 300, and 450 kGy. The quantity of decomposed components was indirectly estimated by measuring changes in alkaline extraction. The more severe degradation of structural components induced by higher irradiation doses resulted in larger amounts of alkaline extract. Carbohydrate compositional analysis using 1 H-NMR spectroscopy was applied to quantitatively investigate changes in the polysaccharides of the industrial hemp. The xylose peak intensity in the NMR spectra decreased with increasing electron irradiation dose, indicating that xylan was more sensitive to electron beam irradiation than cellulose. -- Highlights: → The more severe degradation of structural components induced by higher irradiation. → Carbohydrate analysis was applied to quantitatively investigate changes in the industrial hemp. → Xylan was more sensitive to electron beam irradiation than cellulose.

  2. Compositional changes in industrial hemp biomass (Cannabis sativa L.) induced by electron beam irradiation Pretreatment

    Energy Technology Data Exchange (ETDEWEB)

    Sung, Yong Joo [Department of Biobased Materials, College of Agriculture and Life Science, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Shin, Soo-Jeong [Department of Wood and Paper Science, College of Agriculture and Life Science, Chungbuk National University, Cheongju 361-763 (Korea, Republic of)

    2011-07-15

    The effects of electron beam irradiation on chemical decomposition of industrial hemp biomass were evaluated at doses of 150, 300, and 450 kGy. The quantity of decomposed components was indirectly estimated by measuring changes in alkaline extraction. The more severe degradation of structural components induced by higher irradiation doses resulted in larger amounts of alkaline extract. Carbohydrate compositional analysis using {sup 1}H-NMR spectroscopy was applied to quantitatively investigate changes in the polysaccharides of the industrial hemp. The xylose peak intensity in the NMR spectra decreased with increasing electron irradiation dose, indicating that xylan was more sensitive to electron beam irradiation than cellulose. -- Highlights: {yields} The more severe degradation of structural components induced by higher irradiation. {yields} Carbohydrate analysis was applied to quantitatively investigate changes in the industrial hemp. {yields} Xylan was more sensitive to electron beam irradiation than cellulose.

  3. Thermoluminescent characteristics of CaSO4:Dy+PTFE irradiated with high energy electron beams

    International Nuclear Information System (INIS)

    Alvarez, R.; Rivera, T.; Calderon, J. A.; Jimenez, Y.; Rodriguez, J.; Oviedo, O.; Azorin, J.

    2011-10-01

    In the present work thermoluminescent response of dysprosium doped calcium sulfate embedded in polytetrafluorethylene (CaSO 4 :Dy+PTFE) under high electron beam irradiations from linear accelerator for clinical applications was investigated. The irradiations were carried out using high electron beams (6 to 18 MeV) from a linear accelerator Varian, C linac 2300C/D, for clinical practice purpose. The electron irradiations were obtained by using the water solid in order to guarantee electronic equilibrium conditions. Field shaping for electron beams was obtained with electron cones. Glow curve and other thermoluminescent characteristics of CaSO 4 :Dy+PTFE were conducted under high electron beams irradiations. The thermoluminescent response of the pellets showed and intensity peak centered at around 235 C. Thermoluminescent response of CaSO 4 :Dy+PTFE as a function of high electron absorbed dose showed a linearity in a wide range. To obtain reproducibility characteristic, a set of pellets were exposed repeatedly for the same electron absorbed dose. The results obtained in this study can suggest the applicability of CaSO 4 :Dy+PTFE pellets for high electron beam dosimetry, provided fading is correctly accounted for. (Author)

  4. Dosimetry study for electron beam irradiation in radiation processing

    International Nuclear Information System (INIS)

    Sunaga, Hiromi; Haruyama, Yasuyuki; Takizawa, Haruki; Kojima, Takuji; Yotsumoto, Keiichi

    1995-01-01

    For certain critical applications such as medical device sterilization and food irradiation, accurate calibration of electron energy and absorbed dose is required to assure the quality of irradiated products. To meet this requirement, TRCRE, JAERI has carried out research and development on high dose radiation dosimetry for electron beams in the energy range used in radiation processing (0.15 - 3.0 MeV). JAERI has developed a simultaneous electron beam energy and dosimeter calibration system that consist of a total absorption calorimeter, an electron current density meter, and a stacked thin-film dosimeter set. For low energy electrons, where it is important to measure the depth-dose profile in materials with high depth resolution, we studied the feasibility of a method using Gafchromic film dosimeters. This film, which has an 8-μm thick sensitive layer, is combined with a stepped array of absorber films of the same thickness to produce a high-resolution depth-dose profile on the Gafchromic film. The depth-dose profile obtained in this manner has about five times greater resolution than conventional radiochromic film dosimetry. (author)

  5. Effects of electron beam irradiation on tin dioxide gas sensors

    Indian Academy of Sciences (India)

    WINTEC

    sensitivity increases more rapidly under high doses of irra- diation than under low doses of irradiation. The electron beam irradiation effects were simulated and the mecha- nism was discussed. Acknowledgements. The authors gratefully acknowledge financial support from the MOST 973 program, grant no. 2006CB705604 ...

  6. Enhancement of biodegradability of real textile and dyeing wastewater by electron beam irradiation

    International Nuclear Information System (INIS)

    He, Shijun; Sun, Weihua; Wang, Jianlong; Chen, Lvjun; Zhang, Youxue; Yu, Jiang

    2016-01-01

    A textile and dyeing wastewater treatment plant is going to be upgraded due to the stringent discharge standards in Jiangsu province, China, and electron beam irradiation is considering to be used. In order to determine the suitable location of the electron accelerator in the process of wastewater treatment plant, the effects of electron beam (EB) irradiation on the biodegradability of various real wastewater samples collecting from the different stages of the wastewater treatment plant, the values of chemical oxygen demand (COD), biochemical oxygen demand (BOD 5 ), and the ratio of BOD 5 and COD (BOD 5 /COD), were compared before and after EB irradiation. During EB irradiation process, color indices and absorbance at 254 nm wavelength (UV 254 ) of wastewater were also determined. The results showed that EB irradiation pre-treatment cannot improve the biodegradability of raw textile and dyeing wastewater, which contains a large amount of biodegradable organic matters. In contrast, as to the final effluent of biological treatment process, EB irradiation can enhance the biodegradability to 224%. Therefore, the promising way is to apply EB irradiation as a post-treatment of the conventional biological process. - Highlights: • Irradiation pre-treatment did not improve the raw textile wastewater biodegradability. • Irradiation can highly enhance the biodegradability of biological treated effluent. • EB irradiation can be used as a post-treatment after biological process.

  7. Investigation of the effect of some irradiation parameters on the response of various types of dosimeters to electron irradiation

    International Nuclear Information System (INIS)

    Farah, K.; Kuntz, F.; Kadri, O.; Ghedira, L.

    2004-01-01

    Several undyed and dyed polymer films are commercially available for dosimetry in intense radiation fields, especially for radiation processing of food and sterilisation of medical devices. The effects of temperature during irradiation and post-irradiation stability, on the response of these dosimeters are of importance to operators of irradiation facilities. The present study investigates the effects of temperature during irradiation by 2.2 MeV electrons beam accelerator and post irradiation storage on the response of several types of dosimeter films. All dosimeters showed a significant effect of temperature during irradiation and post-irradiation storage

  8. Investigation of the effect of some irradiation parameters on the response of various types of dosimeters to electron irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Farah, K. E-mail: k.farah@cnstn.rnrt.tn; Kuntz, F.; Kadri, O.; Ghedira, L

    2004-10-01

    Several undyed and dyed polymer films are commercially available for dosimetry in intense radiation fields, especially for radiation processing of food and sterilisation of medical devices. The effects of temperature during irradiation and post-irradiation stability, on the response of these dosimeters are of importance to operators of irradiation facilities. The present study investigates the effects of temperature during irradiation by 2.2 MeV electrons beam accelerator and post irradiation storage on the response of several types of dosimeter films. All dosimeters showed a significant effect of temperature during irradiation and post-irradiation storage.

  9. Effect of Ti:sapphire laser on shear bond strength of orthodontic brackets to ceramic surfaces.

    Science.gov (United States)

    Erdur, Emire Aybuke; Basciftci, Faruk Ayhan

    2015-08-01

    With increasing demand for orthodontic treatments in adults, orthodontists continue to debate the optimal way to prepare ceramic surfaces for bonding. This study evaluated the effects of a Ti:sapphire laser on the shear bond strength (SBS) of orthodontic brackets bonded to two ceramic surfaces (feldspathic and IPS Empress e-Max) and the results were compared with those using two other lasers (Er:YAG and Nd:YAG) and 'conventional' techniques, i.e., sandblasting (50 µm) and hydrofluoric (HF) acid. In total, 150 ceramic discs were prepared and divided into two groups. In each group, the following five subgroups were prepared: Ti:sapphire laser, Nd:YAG laser, Er:YAG laser, sandblasting, and HF acid. Mandibular incisor brackets were bonded using a light-cured adhesive. The samples were stored in distilled water for 24 hours at 37°C and then thermocycled. Extra samples were prepared and examined using scanning electron microscopy (SEM). SBS testing was performed and failure modes were classified. ANOVA and Tukey's HSD tests were used to compare SBS among the five subgroups (P < 0.05). Feldspathic and IPS Empress e-Max ceramics had similar SBS values. The Ti:sapphire femtosecond laser (16.76 ± 1.37 MPa) produced the highest mean bond strength, followed by sandblasting (12.79 ± 1.42 MPa) and HF acid (11.28 ± 1.26 MPa). The Er:YAG (5.43 ± 1.21 MPa) and Nd:YAG laser (5.36 ± 1.04 MPa) groups were similar and had the lowest SBS values. More homogeneous and regular surfaces were observed in the ablation pattern with the Ti:sapphire laser than with the other treatments by SEM analysis. Within the limitations of this in vitro study, Ti:sapphire laser- treated surfaces had the highest SBS values. Therefore, this technique may be useful for the pretreatment of ceramic surfaces as an alternative to 'conventional' techniques. © 2015 Wiley Periodicals, Inc.

  10. Simultaneous electron-proton irradiation of crucible grown and float-zone silicon solar cells

    International Nuclear Information System (INIS)

    Bernard, J.

    1974-01-01

    The realisation of an irradiation chamber which permits simultaneous irradiations by electrons, protons, photons and in-situ measurements of solar cells main parameters (diffusion length, I.V. characteristics) is described. Results obtained on 20 solar cells n/p 10Ωcm made in silicon pulled crystals and 20 solar cells n/p 10Ωcm made in silicon float-zone simultaneously irradiated with electrons and photons are given [fr

  11. Femtosecond laser micromachining of sapphire capillaries for laser-wakefield acceleration

    Energy Technology Data Exchange (ETDEWEB)

    Messner, Philipp; Delbos, Niels Matthias; Maier, Andreas R. [CFEL, Center for Free-Electron Laser Science, 22607 Hamburg (Germany); University of Hamburg, Institute of Experimental Physics, 22761 Hamburg (Germany); Calmano, Thomas [University of Hamburg, Institute of Experimental Physics, 22761 Hamburg (Germany)

    2015-07-01

    Laser-plasma accelerator are promising candidates to provide ultra-relativistic electron beams for compact light sources. One factor that limits the achievable electron beam energy in a laser plasma accelerator is the Rayleigh length of the driver laser, which dictates the length over which the electron beams can effectively be accelerated. To overcome this limitation lasers can be guided in a capillary waveguide to extend the acceleration length beyond the Rayleigh length. The production of waveguide structures on scales, that are suitable for plasma acceleration is very challenging. Here, we present experimental results from waveguide machining in sapphire crystals using a Clark MXR CPA 2010 laser with a wavelength of 775nm, 1KHZ repetition rate and a pulse duration of 160 fs. We discuss the effects of different parameters like energy, lens types, writing speed and polarisation on the size and shape of the capillaries, and compare the performance of different parameter sets.

  12. Bias dependent charge trapping in MOSFETs during 1 and 6 MeV electron irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Shinde, N.S. [Department of Chemical Engineering, Mie University, 5148507 (Japan); Kulkarni, V.R.; Mathakari, N.L.; Bhoraskar, V.N. [Department of Physics, Univeristy of Pune, Pune 411007 (India); Dhole, S.D. [Department of Physics, Univeristy of Pune, Pune 411007 (India)], E-mail: sanjay@physics.unipune.ernet.in

    2008-06-15

    To study irradiation-induced charge trapping in SiO{sub 2} and around the SiO{sub 2}-Si interface, depletion n-MOSFETs (metal-oxide-semiconductor field effect transistor) were used. The devices were gate biased during 1 and 6 MeV pulsed electron irradiation. The I{sub D}-V{sub DS} (drain current versus drain voltage) and I{sub D}-V{sub GS} (drain current versus gate voltage) characteristics were measured before and after irradiation. The shift in threshold voltage {delta}V{sub T} (difference in threshold voltage V{sub T} before and after irradiation) exhibited trends depending on the applied gate bias during 1 MeV electron irradiation. This behavior can be associated to the contribution of irradiation-induced negative charge {delta}N{sub IT} buildup around the SiO{sub 2}-Si interface to {delta}V{sub T}, which is sensitive to the electron tunneling from the substrates. However, only weak gate bias dependence was observed in 6 MeV electron irradiated devices. Independent of the energy loss and applied bias, the positive oxide trapped charge {delta}N{sub OT} is marginal and can be associated to thin and good quality of SiO{sub 2}. These results are explained using screening of free and acceptor states by the applied bias during irradiation, thereby reducing the total irradiation-induced charges.

  13. Growth of GaN on Sapphire via Low-Temperature Deposited Buffer Layer and Realization of p-Type GaN by Mg Doping Followed by Low-Energy Electron Beam Irradiation

    Science.gov (United States)

    Amano, Hiroshi

    2015-12-01

    This is a personal history of one of the Japanese researchers engaged in developing a method for growing GaN on a sapphire substrate, paving the way for the realization of smart television and display systems using blue LEDs. The most important work was done in the mid- to late 80s. The background to the author's work and the process by which the technology enabling the growth of GaN and the realization of p-type GaN was established are reviewed.

  14. Shallow irradiation of vienna sausage by electron beams in preventation of the slime production

    International Nuclear Information System (INIS)

    Watanabe, Hiroshi; Kume, Tamikazu; Ito, Hitoshi; Aoki, Shohei; Sato, Tomotaro

    1975-01-01

    Vienna sausages get spoiled by slime production or putrefaction due to the propagation of microorganisms when stored for 3 to 5 days at 10 deg C. The radiation pasteurization of vienna sausages has mainly been studied with gamma irradiation. The slime of sausages is believed to be microorganisms themselves growing on the surface of the sausages. Pasteurization of the surface of vienna sausages with electron irradiation was thus investigated. The results obtained are as follows: The vienna sausages irradiated with a dose of 0.8 to approximately 1.0 Mrad by 0.5 MeV electrons could be stored without slime production or putrefaction for more than a week at 11 deg C. The effect of pasteurization increased with energy and dose of electrons. However, the changes in the organoleptic qualities of vienna sausages were detected when irradiated with a dose of over 0.7 Mrad by 2.0 MeV electrons. Consequently, the irradiation with a dose of 1.0 Mrad by 1.0 MeV electrons was effectual in lengthening their shelf-life without deterioration of the organoleptic qualities. (author)

  15. Vacancy-type defects in electron and proton irradiated II-VI compounds

    International Nuclear Information System (INIS)

    Brunner, S.; Puff, W.; Balogh, A.G.; Baumann, H.

    1997-01-01

    In this contribution, the authors present a study aimed at investigating the basic properties of radiation induced defects in ZnS and ZnO and the influence of the atmosphere on the annealing characteristics of the defects. Positron annihilation experiments (both lifetime and Doppler-broadening measurements) were performed on both single- and polycrystalline samples, irradiated with 3 MeV protons or 1 MeV electrons. For ZnS it was found that both electron and proton irradiation caused significant changes in the positron annihilation characteristics. The annealing of proton irradiated ZnS in air leads to significant oxidation and eventual transformation into ZnO

  16. Development of an irradiation device for electron beam wastewater treatment

    International Nuclear Information System (INIS)

    Rela, Paulo Roberto

    2003-01-01

    When domestic or industrial effluents with synthetic compounds are disposed without an adequate treatment, they impact negatively the environment with damages to aquatic life and for the human being. Both population and use of goods and services that contribute for the hazardous waste are growing. Hazardous regulations are becoming more restrictive and technologies, which do not destroy these products, are becoming less acceptable. The electron beam radiation process is an advanced oxidation process, that produces highly reactive radicals resulting in mineralization of the contaminant. In this work was developed an irradiation system in order to optimize the interaction of electron beam delivered from the accelerator with the processed effluent. It is composed by an irradiation device where the effluent presents to the electron beam in an up flow stream and a process control unit that uses the calorimetric principle. The developed irradiation device has a different configuration from the devices used by others researchers that are working with this technology. It was studied the technical and economic feasibility, comparing with the literature the results of the irradiation device demonstrated that it has a superior performance, becoming an process for use in disinfection and degradation of hazardous organic compounds of wastewater from domestic and industrial origin, contributing as an alternative technology for Sanitary Engineering. (author)

  17. Color formation study of irradiated polymers by electron beam

    International Nuclear Information System (INIS)

    Nardi, Daniela Teves

    2004-01-01

    Color formation on national and commercial polymers (polymethyl methacrylate, polystyrene and polycarbonate) irradiated by electrons beam was investigated by colorimetry (CIELab), electron spectroscopy resonance (ESR), photoacoustic infrared spectroscopy (FTIR-PAS) and differential exploratory calorimetry (DSC). The heat effect on colorimetric properties was investigated after heating (110 deg C for 1 hour) of irradiated polymers at 150 kGy. The rule of oxygen in colorimetric properties of irradiated polycarbonate was investigated in the air presence and absence (p = 10 -3 mmHg). The visual aspect did not agree with colorimetric parameters only for polycarbonate. Yellow color and darkness were induced by radiation for all studied polymers varying only the intensity and behavior in function of post-irradiation time and heating. Polymethyl methacrylate and polystyrene ESR spectra showed that radicals could be responsible by yellow color centers. Wherever, in polycarbonate, color centers were not due radical species. The nature of color centers for any studied polymer was not study by FTIR-PAS because there were no changes in FTIR-PAS spectra neither in function of dose nor heating. Polycarbonate was the most radiosensible and polystyrene was the most radioresistant of all studied polymers in concern of colorimetric properties. (author)

  18. Application of ''elektronika 10-10'' electron linac for food irradiation

    International Nuclear Information System (INIS)

    Migdal, W.; Maciszewski, W.; Gryzlow, A.

    1995-01-01

    The industrial electron linac ''Elektronica 10-10'' has been installed in Experimental Plant for Food Irradiation (INCT) in 1990. The accelerator is a prototype unit, prior the use for food treatment a period of optimization was involved in its experimental operation during 1993. The accelerator is capable to produce scanned beam of electrons with the energy 10 MeV and beam power of 10 kW. Radiation dose at minimal conveyer speed of 0.25 m/min reaches 50 kGy. The role of the plant is to promote food irradiation in Poland. (Author)

  19. Improved calculation of displacements per atom cross section in solids by gamma and electron irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Piñera, Ibrahin, E-mail: ipinera@ceaden.edu.cu [Centro de Aplicaciones Tecnológicas y Desarrollo Nuclear, CEADEN, 30 St. 502, Playa 11300, Havana (Cuba); Cruz, Carlos M.; Leyva, Antonio; Abreu, Yamiel; Cabal, Ana E. [Centro de Aplicaciones Tecnológicas y Desarrollo Nuclear, CEADEN, 30 St. 502, Playa 11300, Havana (Cuba); Espen, Piet Van; Remortel, Nick Van [University of Antwerp, CGB, Groenenborgerlaan 171, 2020 Antwerpen (Belgium)

    2014-11-15

    Highlights: • We present a calculation procedure for dpa cross section in solids under irradiation. • Improvement about 10–90% for the gamma irradiation induced dpa cross section. • Improvement about 5–50% for the electron irradiation induced dpa cross section. • More precise results (20–70%) for thin samples irradiated with electrons. - Abstract: Several authors had estimated the displacements per atom cross sections under different approximations and models, including most of the main gamma- and electron-material interaction processes. These previous works used numerical approximation formulas which are applicable for limited energy ranges. We proposed the Monte Carlo assisted Classical Method (MCCM), which relates the established theories about atom displacements to the electron and positron secondary fluence distributions calculated from the Monte Carlo simulation. In this study the MCCM procedure is adapted in order to estimate the displacements per atom cross sections for gamma and electron irradiation. The results obtained through this procedure are compared with previous theoretical calculations. An improvement in about 10–90% for the gamma irradiation induced dpa cross section is observed in our results on regard to the previous evaluations for the studied incident energies. On the other hand, the dpa cross section values produced by irradiation with electrons are improved by our calculations in about 5–50% when compared with the theoretical approximations. When thin samples are irradiated with electrons, more precise results are obtained through the MCCM (in about 20–70%) with respect to the previous studies.

  20. Neutron Transmission through Sapphire Crystals

    DEFF Research Database (Denmark)

    of simulations, in order to reproduce the transmission of cold neutrons through sapphire crystals. Those simulations were part of the effort of validating and improving the newly developed interface between the Monte-Carlo neutron transport code MCNP and the Monte Carlo ray-tracing code McStas....

  1. Electron irradiation effect of polyurethane using coincidence doppler-broadening spectroscopy

    International Nuclear Information System (INIS)

    Yang, D.J.; Zhang, J.D.; Leung, J.K.C.; Beling, C.D.; Liu, L.B.

    2006-01-01

    Full text: To understand the electron irradiation effects on polymer, polyether-urethane (ETPU) samples of 2m m in thickness and 1 0 m m in diameter were irradiated by a 1.8M eV electron beam with beam current of 3 ma at room temperature. The irradiated doses are 5 kGy, 10 kGy, 15 kGy, 30 kGy, 100 kGy and 150 kGy. ETPU was manufactured by mixing PTMG-100, TDI-100 and MOCA. The momentum density distributions (MMDs) of electrons taking part in the annihilation processes of positron-electron pairs in ETPU have been measured by coincidence Doppler-broadening spectroscopy (CDBS). By presenting the ratio of the counts in every channel of the measured CDB spectrum to the corresponding counts from a reference spectrum (pristine ETPU), we observed that the change in MMDs is not significant for doses lower than 10 kGy. However, high momentum part of MMDs exhibit an obvious decrease for dose exceeding 15 kGy and then slowly down to steady with doses until 150 kGy. This valley occurs at around 15 x1 0 3m οc and is well known as oxygen-specific, indicative of a less positron trapping by oxygen atoms in some samples of higher dose radiation. It is postulated that the radiation will break the crosslinkings, allowing the trace water and oxygen molecules to be released from the sample surface. Excess NCO groups in ETPU would crosslink with urethane and urea groups to produce allophanate and biuret groups. After receiving a certain amount of electron irradiation, crosslinked allophanate and biuret groups would produce degradation. Thus, residual water and oxygen trapped in ETPU by the crosslinking would diffuse out. However, the irradiation doses up to 150 kGy in this experiment are still not large enough to induce strong degradation of urethane and urea groups

  2. Experimental research on fresh mussel meat irradiated by high-dose electron beam

    International Nuclear Information System (INIS)

    Xiao Lin; Lu Ruifeng; Hu Huachao; Wang Chaoqi; Liu Yanna

    2011-01-01

    The sterilization storage of fresh mussel irradiated high-dose electron beam was studied. From the subjective assessment by the weighted average of the test and other determined parameters, it can be concluded that the flavor of fresh mussel meat sealed canned food irradiated by high-dose electron beam has not been significant affected, and various micro-organisms can be killed effectively, which means that the irradiated fresh mussel meat can be preserved for long-term at room temperature. Therefore the method might resolve the problems induced by traditional frozen preservation methods. (authors)

  3. Interface-mediated amorphization of coesite by 200 keV electron irradiation

    International Nuclear Information System (INIS)

    Gong, W.L.; Wang, L.M.; Ewing, R.C.; Xie, H.S.

    1997-01-01

    Electron-induced amorphization of coesite was studied as a function of irradiation temperature by in situ transmission electron microscopy at an incident energy of 200 keV. Electron-induced amorphization of coesite is induced by an ionization mechanism and is mainly dominated by an interface-mediated, heterogeneous nucleation-and-growth controlled process. Amorphous domains nucleate at surfaces, crystalline-amorphous (c-a) interfaces, and grain boundaries. This is the same process as the interface-mediated vitrification of coesite by isothermal annealing above the thermodynamic melting temperature (875 K), but below the glass transition temperature (1480 K). The interface-mediated amorphization of coesite by electron irradiation is morphologically similar to interface-mediated thermodynamic melting. copyright 1997 American Institute of Physics

  4. Response of custom-developed radiochromic dye films after electron irradiation

    International Nuclear Information System (INIS)

    Vargas-Aburto, C.; Uribe, R.M.; McLauglin, W.L.; Dick, C.E.

    1995-01-01

    Radiochromic dye (RD) films with varying formulations have been produced in this laboratory and are being used to aid in the determination of both the absorbed dose in irradiated test materials as well as the spatial homogeneity of the electron beam used to perform the irradiations. Specifically, these films have been used during the irradiation of both photovoltaic (solar cells) and liquid crystal-based devices (light valves). However, the optical response of RD films is known to be affected by post-irradiation conditions, such as the storage time and temperature, among others. This work represents a study of the time-dependence of the response of the custom-developed RD films. The change in response has been studied for every formulation, as a function of two different post-irradiation storage temperatures (23 degrees C and 45 degrees C) for a period of six months. Results show that significant changes in the response of these films can be observed even after this extended period. These results are compared with those obtained by other authors on similar films subjected to both electron and gamma ( 60 Co) radiation

  5. Ultrastructural changes following electron irradiation in three-dimensional culture of normal human dermal fibroblasts

    International Nuclear Information System (INIS)

    Han, Chunmao; Ishikura, Naotaka; Tsukada, Sadao

    1994-01-01

    The present study was designed to examine the effect of electron irradiation on fibroblasts and extracellular matrices electron-microscopically. The three-dimensional dermal fibroblast culture was exposed to one, 4 or 10 Gy of electron beams. One day after irradiation, fibroblasts were vacuolated in all irradiated groups and intercellular spaces were increased in a dose-dependent manner. Seven days later, intercellular spaces became dense in both one and 4 Gy groups, although they were still extremely increased in the 10 Gy group. The remaining fibroblasts were still activated in all groups. Thirty days after irradiation, myofibroblastic cells were scarcely observed, but extracellular fine fibrils and collagen fibrils were observed in all irradiated groups. The other ultrastructural findings were similar to those in the control group. In conclusion, electron beams damaged not only cells but also extracellular matrix. The extracellular matrix may be repaired by activated residual fibroblasts, resulting in the mixture of new and old collagen fibrils having different diamters. (N.K.)

  6. Discrimination of damages depending on the types of lactic dehydrogenase isozymes in electron beam irradiation

    International Nuclear Information System (INIS)

    Ohta, Akishige; Matsubayashi, Takashi; Liu Xiaolan; Takizawa, Haruki.

    1995-01-01

    Lactate dehydrogenase (EC 1.1.1.27,LDH) was a tetrameric molecule. The five different combinations of two different polypeptide chains can be readily identified by electrophoresis and ion-exchange chromatography. Injury patterns of LDH activity following electron-beam irradiation was investigated by assaying activities of three isozymes (pig heart LDH;M 4 , rabbit muscle LDH;H 4 , chicken heart LDH;M 3 H 1 ). Following results were obtained in the electron beam irradiation to three kinds of LDH isozymes: 1) Each isozyme has respective different reactivities to the electron beam irradiation. 2) Among the isozymes, M 4 enzyme was increased its enzymatic activity by the irradiations of low-level doses. 3) For the H 4 enzymes, an increasing phenomenon of -SH group was found in the low-level doses of electron beam irradiation. (author)

  7. Correlation between electron-irradiation defects and applied stress in graphene: A molecular dynamics study

    Energy Technology Data Exchange (ETDEWEB)

    Kida, Shogo; Yamamoto, Masaya; Kawata, Hiroaki; Hirai, Yoshihiko; Yasuda, Masaaki, E-mail: yasuda@pe.osakafu-u.ac.jp [Department of Physics and Electronics, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan); Tada, Kazuhiro [Department of Electrical and Control Systems Engineering, National Institute of Technology, Toyama College, Toyama 939-8630 (Japan)

    2015-09-15

    Molecular dynamics (MD) simulations are performed to study the correlation between electron irradiation defects and applied stress in graphene. The electron irradiation effect is introduced by the binary collision model in the MD simulation. By applying a tensile stress to graphene, the number of adatom-vacancy (AV) and Stone–Wales (SW) defects increase under electron irradiation, while the number of single-vacancy defects is not noticeably affected by the applied stress. Both the activation and formation energies of an AV defect and the activation energy of an SW defect decrease when a tensile stress is applied to graphene. Applying tensile stress also relaxes the compression stress associated with SW defect formation. These effects induced by the applied stress cause the increase in AV and SW defect formation under electron irradiation.

  8. Defects in electron irradiated vitreous SiO[sub 2] probed by positron annihiliation

    Energy Technology Data Exchange (ETDEWEB)

    Uedono, Akira; Tanigawa, Shoichiro (Tsukuba Univ., Ibaraki (Japan). Inst. of Materials Science); Kawano, Takao (Tsukuba Univ., Ibaraki (Japan). Radioisotope Centre); Itoh, Hisayoshi (Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment)

    1994-10-10

    Defects in 3 MeV electron irradiated vitreous SiO[sub 2] (v-SiO[sub 2]) were probed by the positron annihilation technique. For unirradiated v-SiO[sub 2] specimens, almost all positrons were found to annihilate from positronium (Ps) states. This high formation probability of Ps was attributed to the trapping of positrons by open-space defects. The formation probability of Ps was decreased by the electron irradiation. The observed inhibition of the Ps formation was attributed to the trapping of positrons by point defects introduced and/or activated by the irradiation. From measurements of the lifetime distribution of Ps, it was found that, by the electron irradiation, the mean size of open-space defects was decreased and the size distribution of such defects was broadened. (Author).

  9. Extra spots in the electron diffraction patterns of neutron irradiated zirconium and its alloys

    International Nuclear Information System (INIS)

    Madden, P.K.

    1977-01-01

    Specimens of neutron irradiated zirconium and its alloys were examined in the transmission electron microscope. Groups of extra spots, often exhibiting four-fold symmetry, were observed in thin foil electron diffraction patterns of these specimens. The 'extra-spot' structure, like the expected black-dot/small scale dislocation loop neutron irradiated damage, is approximately 100 A in size. Its nature is uncertain. It may be related to irradiation damage or to some artefact introduced during specimen preparation. If it is the latter, then published irradiation damage defect size distributions and determined irradiation growth strains of other investigators, may require modification. The present inconclusive results indicate that extra-spot structure is likely to consist of oxide particles, but may correspond to hydride precipitation or decoration effects, or even, to electron beam effects. (author)

  10. Preliminary research concerning the using of electron accelerator for irradiation of fresh seasonal fruits

    International Nuclear Information System (INIS)

    Ferdes, O.; Stroia, A.L.; Potcoava, A.; Cojocaru, M.; Minea, R.; Oproiu, C.

    1994-01-01

    There were performed preliminary electron-beam irradiation of strawberries, cherries, and sour cherries. The irradiations were carried out with the IPTRD's electron acceleration at 6 MeV, at different dose-rates, particularly at 1-3 kGy for strawberries, and 0.5-2.0 kGy for cherries. The dosimetry was performed using a PTW medical dosemeter. After irradiation the samples were controlled and preserved at 8-10 o C, 75-85% r.h. The fruits were then analysed for organoleptic and nutritional preservation characteristics , sugars, acidity, C-vitamin, etc. They were also examined in order to find criteria for identification of irradiated fruits. The results show a good shelf-life extension for 5-15 days and the suggest the capability of using the electron-beam irradiation technologies in agro-food industry. (Author)

  11. The effects of electron beam irradiation on additives present in food-contact polymers

    International Nuclear Information System (INIS)

    Crowson, Andrew.

    1991-09-01

    A range of additives (Irganox 1010, Irganox 1076, Irganox 1330, Irgafos 168 and Tinuvin 622) has been incorporated into a variety of food-contact polymers including polypropylene and low density polyethylene. Samples of these stabilized polymers were subjected to electron-beam or gamma irradiation to receive doses of 1,5,10,25 and 50 kGy. The effects of electron-beam irradiation on the amount of extractable antioxidant in polymers were determined. Using hplc techniques it was found that there was a dose-related reduction in the amount of extractable antioxidant similar to that caused by gamma irradiation. The magnitude of this reduction was found to be dependent upon the nature of both the antioxidant and the polymer type. Electron-beam irradiation was also found to cause a dose-related reduction in the levels of the antioxidants Irganox 1010 and Irganox 1076 migrating from polymers into a food simulant. This effect was similar to that caused by gamma irradiation. (author)

  12. An experience of electron beam (EB) irradiated gemstones in Malaysian nuclear agency

    Energy Technology Data Exchange (ETDEWEB)

    Idris, Sarada, E-mail: sarada@nuclearmalaysia.gov.my; Hairaldin, Siti Zulaiha, E-mail: sarada@nuclearmalaysia.gov.my; Tajau, Rida, E-mail: sarada@nuclearmalaysia.gov.my; Karim, Jamilah, E-mail: sarada@nuclearmalaysia.gov.my; Jusoh, Suhaimi, E-mail: sarada@nuclearmalaysia.gov.my; Ghazali, Zulkafli, E-mail: sarada@nuclearmalaysia.gov.my [Malaysian Nuclear Agency, Bangi, Selangor (Malaysia); Ahmad, Shamshad [School of Chemicals and Material Engineering, NUST Islamabad (Pakistan)

    2014-02-12

    In Nuclear Malaysia, a study on gemstone irradiation using beta particle is conducted. The purpose of the study is to evaluate the gemstone colour enhancement by using different kind of precious and non-precious gemstones. By using irradiation technique, selected gemstones are exposed to highly ionizing radiation electron beam to knock off electrons to generate colour centres culminating in the introduction of deeper colours. The colour centres may be stable or unstable depending on the nature of colour centre produced. The colour change of irradiated stones were measured by HunterLab colour measurement. At 50 kGy, Topaz shows changes colour from colourless to golden. Meanwhile pearl shows changes from pale colour to grey. Kunzite and amethyst shows colour changes from colorless to green and pale colour to purple. Gamma survey meter measurement confirmed that irradiation treatment with 3 MeV electron beam machine does not render any activation that activate the gems to become radioactive.

  13. An experience of electron beam (EB) irradiated gemstones in Malaysian nuclear agency

    Science.gov (United States)

    Idris, Sarada; Hairaldin, Siti Zulaiha; Tajau, Rida; Karim, Jamilah; Jusoh, Suhaimi; Ghazali, Zulkafli; Ahmad, Shamshad

    2014-02-01

    In Nuclear Malaysia, a study on gemstone irradiation using beta particle is conducted. The purpose of the study is to evaluate the gemstone colour enhancement by using different kind of precious and non-precious gemstones. By using irradiation technique, selected gemstones are exposed to highly ionizing radiation electron beam to knock off electrons to generate colour centres culminating in the introduction of deeper colours. The colour centres may be stable or unstable depending on the nature of colour centre produced. The colour change of irradiated stones were measured by HunterLab colour measurement. At 50 kGy, Topaz shows changes colour from colourless to golden. Meanwhile pearl shows changes from pale colour to grey. Kunzite and amethyst shows colour changes from colorless to green and pale colour to purple. Gamma survey meter measurement confirmed that irradiation treatment with 3 MeV electron beam machine does not render any activation that activate the gems to become radioactive.

  14. An experience of electron beam (EB) irradiated gemstones in Malaysian nuclear agency

    International Nuclear Information System (INIS)

    Idris, Sarada; Hairaldin, Siti Zulaiha; Tajau, Rida; Karim, Jamilah; Jusoh, Suhaimi; Ghazali, Zulkafli; Ahmad, Shamshad

    2014-01-01

    In Nuclear Malaysia, a study on gemstone irradiation using beta particle is conducted. The purpose of the study is to evaluate the gemstone colour enhancement by using different kind of precious and non-precious gemstones. By using irradiation technique, selected gemstones are exposed to highly ionizing radiation electron beam to knock off electrons to generate colour centres culminating in the introduction of deeper colours. The colour centres may be stable or unstable depending on the nature of colour centre produced. The colour change of irradiated stones were measured by HunterLab colour measurement. At 50 kGy, Topaz shows changes colour from colourless to golden. Meanwhile pearl shows changes from pale colour to grey. Kunzite and amethyst shows colour changes from colorless to green and pale colour to purple. Gamma survey meter measurement confirmed that irradiation treatment with 3 MeV electron beam machine does not render any activation that activate the gems to become radioactive

  15. Identification of irradiated chicken meat using electron spin resonance spectroscopy

    International Nuclear Information System (INIS)

    Chawla, S.P.; Thomas, Paul

    2004-01-01

    Studies were carried out on detection of irradiation treatment in chicken using electron spin resonance (ESR) spectroscopy. The effect of gamma- irradiation treatment on radiation induced signal in different types of chicken namely, broiler, deshi and layers was studied. Irradiation treatment induced a characteristic ESR signal that was not detected in non-irradiated samples. The shape of the signal was not affected by type of the bone. The intensity of radiation induced ESR signal was affected by factors such as absorbed radiation dose, bone type irradiation temperature, post-irradiation storage, post-irradiation cooking and age of the bird. Deep-frying resulted in the formation of a symmetric signal that had a different shape and was weaker than the radiation induced signal. This technique can be effectively used to detect irradiation treatment in bone-in chicken meat even if stored and/or subjected to various traditional cooking procedures. (author)

  16. DETECTION OF SOME IRRADIATED NUTS BY ELECTRON SPIN RESONANCE (ESR) TECHNIQUE

    Energy Technology Data Exchange (ETDEWEB)

    KHALLAF, M F; YASIN, N M.N. [Food Science Dept., Faculty of Agriculture, Ain Shams University, Cairo (Egypt); EL-NASHABY, F M; ALI, H G.M.; EL-SHIEMY, S M [Nuclear Research Centre, Atomic Energy Authority, Cairo (Egypt)

    2008-07-01

    The present investigation was carried out to establish the electron spin resonance (ESR) detection method for identifying irradiated nuts (almond and pistachio). Samples were irradiated with 2, 4 and 6 kGy and stored at room temperature (25{+-} 2{sup 0}C) for six months to study the possibility of detecting its previous irradiation treatments by ESR spectroscopy. Analysis was carried out just after irradiation treatment and during ambient storage period. The ESR signal intensities of irradiated samples were markedly increased correspondingly with irradiation dose as a result of free radicals generated by gamma irradiation so, all irradiated samples under investigation could be differentiated from non-irradiated ones immediately after irradiation treatment. The decay in radicals responsible of ESR signals showed the identification of irradiated almond (shell or edible part) and pistachio (edible part) was impossible after six months of ambient storage.

  17. DETECTION OF SOME IRRADIATED NUTS BY ELECTRON SPIN RESONANCE (ESR) TECHNIQUE

    International Nuclear Information System (INIS)

    KHALLAF, M.F.; YASIN, N.M.N.; EL-NASHABY, F.M.; ALI, H.G.M.; EL-SHIEMY, S.M.

    2008-01-01

    The present investigation was carried out to establish the electron spin resonance (ESR) detection method for identifying irradiated nuts (almond and pistachio). Samples were irradiated with 2, 4 and 6 kGy and stored at room temperature (25± 2 0 C) for six months to study the possibility of detecting its previous irradiation treatments by ESR spectroscopy. Analysis was carried out just after irradiation treatment and during ambient storage period. The ESR signal intensities of irradiated samples were markedly increased correspondingly with irradiation dose as a result of free radicals generated by gamma irradiation so, all irradiated samples under investigation could be differentiated from non-irradiated ones immediately after irradiation treatment. The decay in radicals responsible of ESR signals showed the identification of irradiated almond (shell or edible part) and pistachio (edible part) was impossible after six months of ambient storage

  18. Preparation of PbSe nanoparticles by electron beam irradiation

    Indian Academy of Sciences (India)

    A novel method has been developed by electron beam irradiation to prepare PbSe nanoparticles. 2 MeV 10mA GJ-2-II electronic accelerator was used as radiation source. Nanocrystalline PbSe was prepared rapidly at room temperature under atmospheric pressure without any kind of toxic reagents. The structure and ...

  19. Calibration of thin-film dosimeters irradiated with 80-120 kev electrons

    DEFF Research Database (Denmark)

    Helt-Hansen, J.; Miller, A.; McEwen, M.

    2004-01-01

    A method for calibration of thin-film dosimeters irradiated with 80-120keV electrons has been developed. The method is based on measurement of dose with a totally absorbing graphite calorimeter, and conversion of dose in the graphite calorimeter to dose in the film dosimeter by Monte Carlo calcul......V electron irradiation. The two calibrations were found to be equal within the estimated uncertainties of +/-10% at 1 s.d. (C) 2004 Elsevier Ltd. All rights reserved....

  20. Calculation of flux density distribution on irradiation field of electron accelerator

    International Nuclear Information System (INIS)

    Tanaka, Ryuichi

    1977-03-01

    The simple equation of flux density distribution in the irradiation field of an ordinary electron accelerator is a function of the physical parameters concerning electron irradiation. Calculation is based on the mean square scattering angle derived from a simple multiple scattering theory, with the correction factors of air scattering, beam scanning and number transmission coefficient. The flux density distribution was measured by charge absorption in a graphite target set in the air. For the calculated mean square scattering angles of 0.089-0.29, the values of calculation agree with those by experiment within about 10% except at large scattering angles. The method is applicable to dose evaluation of ordinary electron accelerators and design of various irradiators for radiation chemical reaction. Applicability of the simple multiple scattering theory in calculation of the scattered flux density and periodical variation of the flux density of scanning beam are also described. (auth.)

  1. Influence of electron irradiation on hydrothermally grown zinc oxide single crystals

    International Nuclear Information System (INIS)

    Lu, L W; So, C K; Zhu, C Y; Gu, Q L; Fung, S; Ling, C C; Li, C J; Brauer, G; Anwand, W; Skorupa, W

    2008-01-01

    The resistivity of hydrothermally grown ZnO single crystals increased from ∼10 3 Ω cm to ∼10 6 Ω cm after 1.8 MeV electron irradiation with a fluence of ∼10 16 cm −2 , and to ∼10 9 Ω cm as the fluence increased to ∼10 18 cm −2 . Defects in samples were studied by thermally stimulated current (TSC) spectroscopy and positron lifetime spectroscopy (PLS). After the electron irradiation with a fluence of 10 18 cm −2 , the normalized TSC signal increased by a factor of ∼100. A Zn vacancy was also introduced by the electron irradiation, though with a concentration lower than expected. After annealing in air at 400 °C, the resistivity and the deep traps concentrations recovered to the levels of the as-grown sample, and the Zn vacancy was removed

  2. Histological observation on dental hard tissue irradiated by ultrashort-pulsed laser

    Science.gov (United States)

    Uchizono, Takeyuki; Awazu, Kunio; Igarashi, Akihiro; Kato, Junji; Hirai, Yoshito

    2006-04-01

    In the field of dentistry, effectiveness of USPL irradiation is researched because USPL has less thermal side effect to dental hard tissue. In this paper, we observed morphological change and optical change of dental hard tissue irradiated by USPL for discussing the safety and effectiveness of USPL irradiation to dental hard tissues. Irradiated samples were crown enamel and root dentin of bovine teeth. Lasers were Ti:sapphire laser, which had pulse duration (P d)of 130 fsec and pulse repetition rate (f) of 1kHz and wavelength (l) of 800nm, free electron laser (FEL), which had P d of 15 μsec and f of 10Hz and wavelength of 9.6μm, and Er:YAG laser, which had P d of 250 μsec and f of 10Hz and wavelength of 2.94μm. After laser irradiation, the sample surfaces and cross sections were examined with SEM and EDX. The optical change of samples was observed using FTIR. In SEM, the samples irradiated by USPL had sharp and accurate ablation with no crack and no carbonization. But, in FEL and Er:YAG laser, the samples has rough ablation with crack and carbonization. It was cleared that the P/Ca ratio of samples irradiated by USPL had same value as non-irradiated samples. There was no change in the IR absorption spectrum between samples irradiated by USPL and non-irradiated sample. But, they of samples irradiated by FEL and Er:YAG laser, however, had difference value as non-irradiated samples. These results showed that USPL might be effective to ablate dental hard tissue without thermal damage.

  3. High Temperature Testing with Sapphire Fiber White-Light Michelson Interferometers

    Science.gov (United States)

    Barnes, A.; Pedrazzani, J.; May, R.; Murphy, K.; Tran, T.; Coate, J.

    1996-01-01

    In the design of new aerospace materials, developmental testing is conducted to characterize the behavior of the material under severe environmental conditions of high stress, temperature, and vibration. But to test these materials under extreme conditions requires sensors that can perform in harsh environments. Current sensors can only monitor high temperature test samples using long throw instrumentation, but this is inherently less accurate than a surface mounted sensor, and provides no means for fabrication process monitoring. A promising alternative is the use of sapphire optical fiber sensors. Sapphire is an incredibly rugged material, being extremely hard (9 mhos), chemically inert, and having a melting temperature (over 2000 C). Additionally, there is a extensive background of optical fiber sensors upon which to draw for sapphire sensor configurations.

  4. Electron microbeam specifications for use in cell irradiation experiments

    International Nuclear Information System (INIS)

    Kim, E.-H.; Choi, M.-C.; Lee, D.-H.; Chang, M.; Kang, C.-S.

    2003-01-01

    The microbeam irradiation system was devised originally to identify the hit and unhit cells by confining the beam within the target cell. The major achievement through the microbeam experiment studies has turned out to be the discovery of the 'bystander effect'. Microbeam experiments have been performed with alpha and proton beams in major and with soft x-rays in minor. The study with electron microbeam has been deferred mainly due to the difficulty in confining the electron tracks within a single target cell. In this paper, the electron microbeam irradiation system under development in Korea is introduced in terms of the beam specifications. The KIRAMS electron microbeam irradiation system consists of an electron gun, a vacuum chamber for beam collimation into 5 μm in diameter and a biology stage. The beam characteristics in terms of current and energy spectrum of the electrons entering a target cell and its neighbor cells were investigated by Monte Carlo simulation for the electron source energies of 25, 50, 75 and 100 keV. Energy depositions in the target cell and the neighbor cells were also calculated. The beam attenuation in current and energy occurs while electrons pass through the 2 μm-thick Mylar vacuum window, 100 μm-thick air gap and the 2 μm-thick Mylar bottom of cell dish. With 25 keV electron source, 80 % of decrease in current and 30 % of decrease in average energy were estimated before entering the target cell. With 75 keV electron source, on the other hand, 55 % of decrease in current and less than 1 % of decrease in average energy were estimated. Average dose per single collimated electron emission was 0.067 cGy to the target cell nucleus of 5 μm in diameter and 0.030 cGy to the cytoplasm of 2.5 μm in thickness with 25 keV electron source while they were 0.15 cGy and 0.019 cGy, respectively, with 75 keV electron source. The multiple scattering of electrons resulted in energy deposition in the neighbor cells as well. Dose to the first

  5. Radiation induced coloring of glasses measured during and after electron irradiation

    International Nuclear Information System (INIS)

    Swyler, K.J.; Hardy, W.H. II; Levy, P.W.

    1975-01-01

    The growth of color centers during irradiation, and the decay after irradiation, were studied in two glasses using recently developed equipment for making optical absorption and luminescence measurements during and after electron irradiation. The glasses studied were NBS 710, a soda-lime silicate glass, and NBS 711, a lead silicate glass. Both glasses exhibit similar coloring characteristics. The radiation-induced absorption spectra consists of a weak gaussian shaped band in the visible, a stronger gaussian band in the ultraviolet, and a band edge ''shift'' which may be accurately approximated by a third gaussian band. For all absorption bands, the color center vs dose (or irradiation time) curves can be accurately resolved into two saturating exponential and one linear component. The decay curves obtained after the irradiation is terminated can be accurately expressed by three exponential components. Coloring and decay curves made at different dose rates indicate that the processes responsible for decay after irradiation and electron hole recombination during irradiation play important roles in determining the rate and extent of coloring. Results are qualitatively in agreement with some very simple kinetic treatments for color center formation. In some, but not all, respects the quantitative agreement is also good. Lastly, the results indicate that it is necessary to make measurements during irradiation to establish the formation kinetics of color centers that are unstable at the bombardment temperature. (U.S.)

  6. Polymeric materials obtained by electron beam irradiation

    International Nuclear Information System (INIS)

    Dragusin, M.; Moraru, R.; Martin, D.; Radoiu, M.; Marghitu, S.; Oproiu, C.

    1995-01-01

    Research activities in the field of electron beam irradiation of monomer aqueous solution to produce polymeric materials used for waste waters treatment, agriculture and medicine are presented. The technologies and special features of these polymeric materials are also described. The influence of the chemical composition of the solution to ba irradiated, absorbed dose level and absorbed dose rate level are discussed. Two kinds of polyelectrolytes, PA and PV types and three kinds of hydrogels, pAAm, pAAmNa and pNaAc types, the production of which was first developed with IETI-10000 Co-60 source and then adapted to the linacs built in Accelerator Laboratory, are described. (author)

  7. Electron-irradiation-induced crystallization of amorphous orthophosphates

    International Nuclear Information System (INIS)

    Meldrum, A.; Ewing, R.C.; Boatner, L.A.

    1996-12-01

    Amorphous LaPO 4 , EuPO 4 , GdPO 4 , ScPO 4 , and fluorapatite [Ca 5 (PO 4 ) 3 F] were irradiated by electron beam in a TEM. Irradiations were done at -150 to 300 C, 80 to 200 keV, and current densities from 0.3 to 16 A/cm 2 . In all cases, the materials crystallized to form a randomly oriented polycrystalline assemblage. Crystallization is driven dominantly by inelastic processes, although ballistic collisions with target nuclei can be important above 175 keV, particularly in apatite. Using a high current density, crystallization is so fast that continuous lines of crystallites can be ''drawn'' on the amorphous matrix

  8. Effect of electron beam irradiation on the quality of mackerel (Pneumatophorus japonicus) Meat

    International Nuclear Information System (INIS)

    Wu Dongxiao; Yang Wenge; Xu Dalun; Zhou Xingyu; Ou Changrong; Shi Huidong

    2012-01-01

    The effect of 3, 5, 7 kGy electron beam irradiation on the volatile basic nitrogen (VBN) and peroxide value (POV), the contents of histamine and unsaturated fatty acid (UFA) in Pneumatophorus japonicus meat with vacuum or ordinary package were measured during refrigeration. The results showed that electron beam treatment could effectively control the contents of histamine and VBN, postpone the oxidation of unsaturated fatty acid in P. japonicus meat. The shelf life of P. japonicus meat could be extended with electron beam irradiation. Before cold storage, it is appropriate that the P. japonicus meat were ordinary packaged and irradiated at the dose of 5 kGy. (authors)

  9. Deuterium trapping at vacancy clusters in electron/neutron-irradiated tungsten studied by positron annihilation spectroscopy

    Science.gov (United States)

    Toyama, T.; Ami, K.; Inoue, K.; Nagai, Y.; Sato, K.; Xu, Q.; Hatano, Y.

    2018-02-01

    Deuterium trapping at irradiation-induced defects in tungsten, a candidate material for plasma facing components in fusion reactors, was revealed by positron annihilation spectroscopy. Pure tungsten was electron-irradiated (8.5 MeV at ∼373 K and to a dose of ∼1 × 10-3 dpa) or neutron-irradiated (at 573 K to a dose of ∼0.3 dpa), followed by post-irradiation annealing at 573 K for 100 h in deuterium gas of ∼0.1 MPa. In both cases of electron- or neutron-irradiation, vacancy clusters were found by positron lifetime measurements. In addition, positron annihilation with deuterium electrons was demonstrated by coincidence Doppler broadening measurements, directly indicating deuterium trapping at vacancy-type defects. This is expected to cause significant increase in deuterium retention in irradiated-tungsten.

  10. Interaction of electron irradiation with nitrogen-related deep levels in InGaAsN

    International Nuclear Information System (INIS)

    Khan, Aurangzeb; Gou, J.; Imazumi, M.; Yamaguchi, M.

    2007-01-01

    The authors present an investigation of 1 MeV electron irradiation-induced defects in p-InGaAsN and their impact on nitrogen-related defects. A hitherto existing nitrogen-related electron trap E1 (0.20 eV) shows a significant increase in concentration after 1 MeV electron irradiation. In addition, 1 MeV electron irradiation induced a hole trap H1 at energy of about 0.75 eV above the valence band. Isothermal annealing analysis indicates that E1 is a complex defect involving an interstitial or a substitutional atom in combination with some other defect, whose concentration is enhanced by irradiation. A correlation exists between the recovery of free carrier concentration and recovery of the E1 center to preradiation concentrations, which indicates the possibility of the E1 as an acceptorlike center

  11. Characterization of single crystal uranium-oxide thin films grown via reactive-gas magnetron sputtering on yttria-stabilized zirconia and sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Strehle, Melissa M.; Heuser, Brent J., E-mail: bheuser@illinois.edu; Elbakhshwan, Mohamed S.; Han Xiaochun; Gennardo, David J.; Pappas, Harrison K.; Ju, Hyunsu

    2012-06-30

    The microstructure and valence states of three single crystal thin film systems, UO{sub 2} on (11{sup Macron }02) r-plane sapphire, UO{sub 2} on (001) yttria-stabilized zirconia, and U{sub 3}O{sub 8} on (11{sup Macron }02) r-plane sapphire, grown via reactive-gas magnetron sputtering are analyzed primarily with X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and ultraviolet photoelectron spectroscopy (UPS). XRD analysis indicates the growth of single crystal domains with varying degrees of mosaicity. XPS and UPS analyses yield U-4f, U-5f, O-1s, and O-2p electron binding energies consistent with reported bulk values. A change from p-type to n-type semiconductor behavior induced by preferential sputtering of oxygen during depth profile analysis was observed with both XPS and UPS. Trivalent cation impurities (Nd and Al) in UO{sub 2} lower the Fermi level, shifting the XPS spectral weight. This observation is consistent with hole-doping of a Mott-Hubbard insulator. The uranium oxide-(11{sup Macron }02) sapphire system is unstable with respect to Al interdiffusion across the film-substrate interface at elevated temperature. - Highlights: Black-Right-Pointing-Pointer Single crystal uranium-oxides grown on sapphire and yttria-stabilized zirconia. Black-Right-Pointing-Pointer Anion and cation valence states studied by photoelectron emission spectroscopy. Black-Right-Pointing-Pointer Trivalent Nd and Al impurities lower the Fermi level. Black-Right-Pointing-Pointer Uranium-oxide films on sapphire found to be unstable with respect to Al interdiffusion.

  12. High-dose MeV electron irradiation of Si-SiO2 structures implanted with high doses Si+

    Science.gov (United States)

    Kaschieva, S.; Angelov, Ch; Dmitriev, S. N.

    2018-03-01

    The influence was studied of 22-MeV electron irradiation on Si-SiO2 structures implanted with high-fluence Si+ ions. Our earlier works demonstrated that Si redistribution is observed in Si+-ion-implanted Si-SiO2 structures (after MeV electron irradiation) only in the case when ion implantation is carried out with a higher fluence (1016 cm-2). We focused our attention on the interaction of high-dose MeV electron irradiation (6.0×1016 cm-2) with n-Si-SiO2 structures implanted with Si+ ions (fluence 5.4×1016 cm-2 of the same order magnitude). The redistribution of both oxygen and silicon atoms in the implanted Si-SiO2 samples after MeV electron irradiation was studied by Rutherford back-scattering (RBS) spectroscopy in combination with a channeling technique (RBS/C). Our results demonstrated that the redistribution of oxygen and silicon atoms in the implanted samples reaches saturation after these high doses of MeV electron irradiation. The transformation of amorphous SiO2 surface into crystalline Si nanostructures (after MeV electron irradiation) was evidenced by atomic force microscopy (AFM). Silicon nanocrystals are formed on the SiO2 surface after MeV electron irradiation. The shape and number of the Si nanocrystals on the SiO2 surface depend on the MeV electron irradiation, while their size increases with the dose. The mean Si nanocrystals height is 16-20 nm after irradiation with MeV electrons at the dose of 6.0×1016 cm-2.

  13. Subthreshold displacement damage in copper--aluminum alloys during electron irradiation

    International Nuclear Information System (INIS)

    Drosd, R.; Kosel, T.; Washburn, J.

    1976-12-01

    During electron irradiation at low energies which results in a negligible damage rate in a pure material, lighter solute atoms are displaced, which may in turn indirectly displace solvent atoms by a focussed replacement collision or an interstitial diffusion jump. The extent to which lighter solute atoms contribute to the subthreshold damage rate has been examined by irradiating copper--aluminum alloys at high temperatures in a high voltage electron microscope. The damage rate, as measured by monitoring the growth rate of dislocation loops, at 300 kV was found to increase linearly with the aluminum concentration

  14. Electron dosimetry in irradiation processing with rad-hard diodes

    International Nuclear Information System (INIS)

    Santos, Thais Cavalheri dos

    2012-01-01

    This work had the aim of the development of dosimetric systems based on Si special diodes, resistant to radiation damage to online monitoring of irradiation processing using 1.5 MeV electrons energy and for relative dosimetry and clinical electron beam scanning within an energy range of 6 MeV up to 21 MeV. The diodes used were produced by Float Zone standard (FZ), Magnetic Czochralski (MCz) and epitaxy growth (EPI) methods. In order to use the diodes as detectors, they were fixed on alumina base to allow the connection of the polarization electrodes and the signals extraction. After the diode assembly on the base, each one was housed in a black acrylic probe with aluminized Mylar® window and LEMO® connector. With the devices operating in photovoltaic mode, the integration of the current signals as a function of irradiation time allowed obtain the charge produced in the sensitive volume of each diode irradiated. The electron accelerator used for high doses irradiation was the DC 1500/25/4 JOB 188 of the 1.5 MeV installed at the Radiation Technology Center of the IPEN/CNEN-SP. The current profile as function of exposure time, the response repeatability, the sensitivity as function of absorbed dose and the dose response curve were studied for each device. In comparison to FZ diode, we observed a greater decrease in the sensitivity for MCz diode, and good repeatability in both cases. Also, the increasing of the charge with the absorbed dose was well fitted by a second order polynomial function. In the EPI diode characterization, this one exhibited repeatability better than CTA dosimeters applied routinely in radiation processing. The above results indicate the potential use of these radiation hardness Si diodes in online dosimetry to high doses applications. For low doses irradiation were used the linear accelerators KD2 and Primus, both manufactured by Siemens and located at Sirio-Libanes Hospital. The diodes responses were evaluated for electron beams within the

  15. Dynamic investigation of electron trapping and charge decay in electron-irradiated Al sub 2 O sub 3 in a scanning electron microscope: Methodology and mechanisms

    CERN Document Server

    Fakhfakh, S; Belhaj, M; Fakhfakh, Z; Kallel, A; Rau, E I

    2002-01-01

    The charging and discharging of polycrystalline Al sub 2 O sub 3 submitted to electron-irradiation in a scanning electron microscope (SEM) are investigated by means of the displacement current method. To circumvent experimental shortcomings inherent to the use of the basic sample holder, a redesign of the latter is proposed and tests are carried out to verify its operation. The effects of the primary beam accelerating voltage on charging, flashover and discharging phenomena during and after electron-irradiation are studied. The experimental results are then analyzed. In particular, the divergence between the experimental data and those predicted by the total electron emission yield approach (TEEYA) is discussed. A partial discharge was observed immediately after the end of the electron-irradiation exposure. The experimental data suggests, that the discharge is due to the evacuation to the ground, along the insulator surface, of released electrons from shallow traps at (or in the close vicinity of) the insulat...

  16. The reactivity of plant, murine and human genome to electron beam irradiation

    International Nuclear Information System (INIS)

    Gavrila, L.; Usurelu, D.; Radu, I.; Timus, D.

    2005-01-01

    A broad spectrum of chromosomal rearrangements is described in plants (Allium cepa), mouse (Mus musculus domestics) and in humans (Homo sapiens sapiens), following in vivo and in vitro beta irradiation. Irradiations were performed at EAL, using a 2.998 GHz traveling-wave electron accelerator. The primary effect of electron beam irradiation is chromosomal breakage followed up by a variety of chromosomal rearrangements i.e. chromosomal aberrations represented mainly by chromatid gaps, deletions, ring chromosomes, dicentrics, translocations, complex chromosomal interchanges, acentric fragments and double minutes (DM). The clastogenic effects were associated in some instances with cell sterilization (i.e. cell death)

  17. Thermal healing of the sub-surface damage layer in sapphire

    International Nuclear Information System (INIS)

    Pinkas, Malki; Lotem, Haim; Golan, Yuval; Einav, Yeheskel; Golan, Roxana; Chakotay, Elad; Haim, Avivit; Sinai, Ela; Vaknin, Moshe; Hershkovitz, Yasmin; Horowitz, Atara

    2010-01-01

    The sub-surface damage layer formed by mechanical polishing of sapphire is known to reduce the mechanical strength of the processed sapphire and to degrade the performance of sapphire based components. Thermal annealing is one of the methods to eliminate the sub-surface damage layer. This study focuses on the mechanism of thermal healing by studying its effect on surface topography of a- and c-plane surfaces, on the residual stresses in surface layers and on the thickness of the sub-surface damage layer. An atomically flat surface was developed on thermally annealed c-plane surfaces while a faceted roof-top topography was formed on a-plane surfaces. The annealing resulted in an improved crystallographic perfection close to the sample surface as was indicated by a noticeable decrease in X-ray rocking curve peak width. Etching experiments and surface roughness measurements using white light interferometry with sub-nanometer resolution on specimens annealed to different extents indicate that the sub-surface damage layer of the optically polished sapphire is less than 3 μm thick and it is totally healed after thermal treatment at 1450 deg. C for 72 h.

  18. Low-energy electron irradiation assisted diffusion of gold nanoparticles in polymer matrix

    International Nuclear Information System (INIS)

    Deore, Avinash V.; Bhoraskar, V.N.; Dhole, S.D.

    2014-01-01

    A simple and controllable method to synthesize nanoparticles in the surface region of polymers was used by low energy electron irradiation. Using this method, gold nanoparticles have been synthesized by irradiating gold coated PVA (Polyvinyl Alcohol) sheets. This method was easy in operation and even period of few minutes was sufficient to obtain the nanoparticles. The coatings (∼10 μm) made from a mixture of ethanol and HAuCl 4 on PVA sheets (∼150 μm) by simple drop cast method were irradiated with 30 keV electrons, at room temperature and 10 −6 mbar vacuum level. The electron fluence was varied from coating to coating in the range of 0 to 24×10 15 e/cm 2 . The irradiated samples were characterized by the UV–Vis, XRD, SEM and RBS techniques. The plasmon absorption peak at ∼539 nm in UV–Vis spectra was an evidence for the initiation of the growth of gold nanoparticles. The X-ray diffraction results and the blue shift in the plasmon absorption peak reveal that the size of nanoparticles could be tailored in the range from 58 to 40 nm by varying the electron fluence. The diffusion of gold in the PVA was confirmed by the Rutherford backscattering spectroscopy and scanning electron microscopy techniques. This method of synthesis of metal nanoparticles by low energy electron beam irradiation has the key importance in the development of new fabrication techniques for nanomaterials. - Highlights: • The results indicate that low energy electrons can effectively be used for the synthesis of nanoparticles of different sizes. • This study leads to a definite conclusion that gold nanoparticles have been synthesized in surface region of the PVA sheet. • The size of nanoparticles decreases with increasing electron fluence. • The depth of diffusion of Au atoms at maximum fluence was found to be ∼1.5 μm

  19. Application of polymers cross-linked by electron beam irradiation to electric wire industry

    International Nuclear Information System (INIS)

    Oda, Eisuke

    1976-01-01

    Applications of the polymers cross-linked by electron beam irradiation to electric wire industry as an example of dully developed utilization are reviewed. The report is divided into five parts, namely 1) radiation sources and irradiation processes, 2) development of crosslinking materials, 3) accumulation of electric charge and accumulation of heat, 4) examples of application, and 5) future prospect. Such a phenomenon as discharge destruction pattern (Lichtenberg figure) must be solved, when cable insulation materials are cross-linked by electron beam irradiation. The measures for preventing the discharge destruction are required, especially when the layers of polyethylene insulation for high voltage cables are irradiated. The accumulation of heat causes the troubles in foaming, degeneration and wire running of high potential cables, when the layers of insulation are thick. Effective promoters for cross-linking must be studied to reduce the radiation dose. The irradiators capable of irradiating wires uniformly are desirable. Electron beam accelerators will be used, as far as the radiation dose of 10 or more Mrad is required for cross-linking irradiation. If the dose of one tenth or less of the above value is required, gamma-ray sources (RI) are rather easily applicable than focused strong beam. The utilization of spent nuclear fuel is desirable. (Iwakiri, K.)

  20. Crystal orientation mechanism of ZnTe epilayers formed on different orientations of sapphire substrates by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Nakasu, T.; Yamashita, S.; Aiba, T.; Hattori, S.; Sun, W.; Taguri, K.; Kazami, F.; Kobayashi, M.

    2014-01-01

    The electrooptic effect in ZnTe has recently attracted research attention, and various device structures using ZnTe have been explored. For application to practical terahertz wave detector devices based on ZnTe thin films, sapphire substrates are preferred because they enable the optical path alignment to be simplified. ZnTe/sapphire heterostructures were focused upon, and ZnTe epilayers were prepared on highly mismatched sapphire substrates by molecular beam epitaxy. Epitaxial relationships between the ZnTe thin films and the sapphire substrates with their various orientations were investigated using an X-ray diffraction pole figure method. (0001) c-plane, (1-102) r-plane, (1-100) m-plane, and (11-20) a-plane oriented sapphire substrates were used in this study. The epitaxial relationship between ZnTe and c-plane sapphire was found to be (111) ZnTe//(0001) sapphire with an in-plane orientation relationship of [−211] ZnTe//[1-100] sapphire. It was found that the (211)-plane ZnTe layer was grown on the m-plane of the sapphire substrates, and the (100)-plane ZnTe layer was grown on the r-plane sapphire. When the sapphire substrates were inclined from the c-plane towards the m-axis direction, the orientation of the ZnTe thin films was then tilted from the (111)-plane to the (211)-plane. The c-plane of the sapphire substrates governs the formation of the (111) ZnTe domain and the ZnTe epilayer orientation. These crystallographic features were also related to the atom arrangements of ZnTe and sapphire.

  1. Formation of novel reactive intermediate by electron-laser dual beam irradiation

    International Nuclear Information System (INIS)

    Ishida, Akito; Takamuku, Setsuo

    1992-01-01

    The pulse radiolysis system of the Institute of Scientific and Industrial Research, Osaka University, (ISIR) has been progressed to observe a highly reactive species, which is produced by successive irradiation of electron and laser or of CW-UV-light and electron. The dual beam irradiation system, which consists of the beam synchronization system, the optical alignment, and the measurement system, is described in detail. Dual beam irradiation studies on 2-methylbenzophenone and some compounds with a C=N bond have been carried out by use of this system. Pulse radiolysis of 2-methylbenzophenone in benzene induced formation of an unstable photoenol via the triplet state, which was irradiated by a visible laser pulse to give dihydroanthrone. Pulse radiolysis of syn-benzalaniline and a nitrileylide in 2-methyltetrahydrofuran, which were produced by steady state photoirradiation at low temperature, enabled us to observe their very unstable radical anions. (author)

  2. Flashlamp pumped Ti-sapphire laser for ytterbium glass chirped pulse amplification

    Energy Technology Data Exchange (ETDEWEB)

    Nishimura, Akihiko; Ohzu, Akira; Sugiyama, Akira [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment; and others

    1998-03-01

    A flashlamp pumped Ti:sapphire laser is designed for ytterbium glass chirped pulse amplification. A high quality Ti:sapphire rod and a high energy long pulse discharging power supply are key components. The primary step is to produce the output power of 10 J per pulse at 920 nm. (author)

  3. Electron beam irradiation on cation exchanger used for strontium recovery

    International Nuclear Information System (INIS)

    Watanabe, Sou; Nakamura, Masahiro; Nomura, Kazunori; Nakajima, Yasuo; Okamoto, Yoshihiro

    2014-01-01

    Titanate is promising material for radioactive Sr recovery from liquid waste generated in the nuclear facilities. "9"0Sr is one of the most important nuclides in order to release the liquid waste into the environment due to its strong beta-ray decay energy. Although the titanate is applied to radioactive Sr decontamination facility, their resistance to irradiations from radioactive elements adsorbed is not widely investigated so far. In this study, durability of a hydrous titanic acid ion exchanger against beta-ray irradiation were evaluated through electron beam irradiation, elution behaviour of Sr after the irradiation and local structural analysis of the titanate. 1.4 MGy irradiation led to 1% of Sr elution, and the elution could be attributed to defects of O in the titanate induced by the irradiation. Chemical state of Ti of the titanate must be stable up to 2.7 MGy irradiation. (author)

  4. Effects of proton irradiation on electronic structure of NdFeB permanent magnets

    Energy Technology Data Exchange (ETDEWEB)

    Yang, L. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Zhen, L. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)], E-mail: lzhen@hit.edu.cn; Xu, C.Y.; Sun, X.Y.; Shao, W.Z. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)

    2009-09-15

    Effects of proton irradiation on electronic structure and atomic local structure of N35EH-type NdFeB permanent magnet were investigated by soft X-ray absorption spectrometry and Moessbauer spectrometry. The local coordination environment of Fe atoms changes after proton irradiation, and the average hyperfine field H{sub in} of the magnets decreases from 288.4 to 286.9 kOe. The effects of irradiation on Fe atoms local environment at different lattice sites are different. The near edge structure of Fe L{sub 3} edge is changed, indicating the density of unoccupied state of Fe 3d electrons increases after proton irradiation.

  5. A Study on the Thermal Neutron Filter for the Irradiation of Electronic Materials at HANARO

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Seong Woo; Kim, Sung Ryul; Park, Seung Jae; Shin, Yoon Taeg; Cho, Man Soon; Cho, Kee Nam [KAERI, Daejeon (Korea, Republic of)

    2016-05-15

    The representative example is a technique of making the semiconductor with the transmutation using the pure Si. This NTD (Neutron Transmutation Doping) Si is used as a high-quality semiconductor because it has a uniform resistance. Likewise, the electronic materials are being investigated to improve the performance of material using the neutron irradiation method. The mechanism for reaction between the electronic materials and the neutrons depends on the energy of the neutron. Capturing reaction by thermal neutrons causes the transmutation and a lot of defects are made by fast neutrons. The study for the effect by such neutron energy is necessary to understand the performance improvement of the irradiated electronic materials. The thermal neutron filter was investigated to be used for the irradiation of electronic materials at HANARO. IP irradiation hole was selected and the irradiation device was designed. The analysis was conducted considering four candidate materials.

  6. Sapphire-fiber-based distributed high-temperature sensing system.

    Science.gov (United States)

    Liu, Bo; Yu, Zhihao; Hill, Cary; Cheng, Yujie; Homa, Daniel; Pickrell, Gary; Wang, Anbo

    2016-09-15

    We present, for the first time to our knowledge, a sapphire-fiber-based distributed high-temperature sensing system based on a Raman distributed sensing technique. High peak power laser pulses at 532 nm were coupled into the sapphire fiber to generate the Raman signal. The returned Raman Stokes and anti-Stokes signals were measured in the time domain to determine the temperature distribution along the fiber. The sensor was demonstrated from room temperature up to 1200°C in which the average standard deviation is about 3.7°C and a spatial resolution of about 14 cm was achieved.

  7. Effect of laser and/or electron beam irradiation on void swelling in SUS316L austenitic stainless steel

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Subing [School of Metallurgical and Ecological Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Yang, Zhanbing, E-mail: yangzhanbing@ustb.edu.cn [School of Metallurgical and Ecological Engineering, University of Science and Technology Beijing, Beijing 100083 (China); State Key Laboratory of Advanced Metallurgy, University of Science and Technology Beijing, Beijing 100083 (China); Wang, Hui [School of Metallurgical and Ecological Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Watanabe, Seiichi; Shibayama, Tamaki [Center for Advanced Research of Energy and Materials, Faculty of Engineering, Hokkaido University, Sapporo, Hokkaido 060-8628 (Japan)

    2017-05-15

    Large amounts of void swelling still limit the application of austenitic stainless steels in nuclear reactors due to radiation-induced lattice point defects. In this study, laser and/or beam irradiation was conducted in a temperature range of 573–773 K to explore the suppression of void swelling. The results show that during sequential laser-electron beam irradiation, the void nucleation is enhanced because of the vacancy clusters and void nuclei formed under pre-laser irradiation, causing greater void swelling than single electron beam irradiation. However, simultaneous laser-electron dual-beam irradiation exhibits an obvious suppression effect on void swelling due to the enhanced recombination between interstitials and vacancies in the temperature range of 573–773 K; especially at 723 K, the swelling under simultaneous dual-beam irradiation is 0.031% which is only 22% of the swelling under electron beam irradiation (0.137%). These results provide new insight into the suppression of void swelling during irradiation. - Highlights: •The temperature dependence of void swelling under simultaneous laser-electron dual-beam irradiation has been investigated. •Pre-laser irradiation enhances void nucleation at temperatures from 573 K to 773 K. •Simultaneous laser-electron dual-beam irradiation suppresses void swelling in the temperature range of 573–773 K.

  8. Degradation and detoxification of aqueous nitrophenol solutions by electron beam irradiation

    International Nuclear Information System (INIS)

    Song Weihua; Zheng Zheng; Rami, Abual-Suud; Zhou Tao; Hang Desheng

    2002-01-01

    The goal of this research was to study the degradation of nitrophenol solutions by high-energy electron beam irradiation. The results showed that the degradation processes obey an apparent first-order degradation. At the higher irradiation doses the pH of solutions decreased; however, the dissolved organic carbon of the solutions was essentially unchanged. To investigate the toxicity of the radiolytic products the oxygen uptake rate of activated sludge was determined. The toxicity of irradiated nitrophenol solutions decreased from the initial non-irradiated solutions

  9. Electron beam irradiation: novel technology for phytosanitary purposes

    International Nuclear Information System (INIS)

    Bhalla, Shashi; Srinivasan, K.; Dwivedi, J.; Gautam, S.; Sharma, Arun

    2015-01-01

    In the WTO regime, flow of agricultural commodities has increased, posing risk of inadvertent introduction of exotic pests. This can be minimized by undertaking quarantine measures. Quarantine/phytosanitary disinfestation treatments demand a very high level of security as the pest tolerance in quarantine is zero. Methyl bromide, a potent fumigant has been restricted in its use due to ozone depleting effect. Also, the conventional chemicals/fumigants being used world over are being restricted globally because of the various associated problems. Therefore, there is a need for an alternative ecofriendly strategy for controlling the pests. Irradiation, an approved technology by International Plant Protection Convention, appears to be a viable, nonchemical, residue-free strategy. Disinfestation of pulses with low energy electron irradiation potentially will have less deleterious effects on commodity quality than irradiation with other sources. Internationally, new radiation generating sources as Electron beam (EB) are being explored to meet import standards of quality and quarantine. The EB has a machine source and can be simply switched on or off. Irradiation of legume seeds viz., blackgram, greengram and soybean infested with pulse beetles (Callosobruchus maculatus and C. chinensis) at different doses at an energy level of 500 keV using the Accelerator facility at Raja Ramanna Centre for Advanced Technology, Indore revealed the dose-dependent effects on the insect growth parameters. Adult emergence from seeds infested with different stages was negligible and eggs laid by beetles that survived treatment did not develop into adults at higher doses. The lower doses viz., 170, 340 and 510 Gy on the other hand caused sterility effect on the insect but showed stimulatory effect on the physiological seed parameters . viz., seedling vigour and vigour index. Electron beam irradiation has a great potential for use in the disinfestation for phytosanitary purposes. Nevertheless

  10. Wetting phenomena of Al-Cu alloys on sapphire below 800 deg. C

    Energy Technology Data Exchange (ETDEWEB)

    Klinter, Andreas J., E-mail: andreas.klinter@mail.mcgill.ca [Mining and Materials Engineering, McGill University, M.H. Wong Building, 3610 University Street, Montreal, QC, H3A 2B2 (Canada); Leon-Patino, Carlos A. [Instituto de Investigaciones Metalurgicas, Universidad Michoacana de San Nicolas de Hidalgo, Apdo. Postal 888, CP 58000 Morelia, Michoacan (Mexico); Drew, Robin A.L. [Faculty of Engineering and Computer Science, Concordia University, 1455 Maisonneuve Blvd, EV 2.169, Montreal, QC, H3G 1M8 (Canada)

    2010-02-15

    Using a modified dispensed drop method, a decrease in contact angle on sapphire from pure aluminum to low-copper-containing Al alloys (7-12 wt.%) was found; with higher copper additions {theta} transitions to the non-wetting regime. Atomic force microscopy on long-term samples showed a significantly increased surface roughness beneath the drop. Using high-resolution transmission electron microscopy, the reaction product at the interface was identified as CuAl{sub 2}O{sub 4} for Al-7Cu and Al{sub 2}O{sub 3} for an Al-99.99 drop. X-ray photoelectron spectroscopy further confirmed the formation of CuAl{sub 2}O{sub 4} under CuAl{sub 2} drops. Spinel formation is caused by reaction of the alloy with residual oxygen in the furnace that is transported along the interface as modeled by thermodynamic simulations. The formation of CuAl{sub 2}O{sub 4} causes the reduced {sigma}{sub sl} and hence the improved wettability of sapphire by low-copper-containing alloys compared to pure aluminum. The main reason for the increase in {theta} with higher copper contents is the increasing {sigma}{sub lv} of the alloy.

  11. Transmission electron-microscopic studies of structural changes in polycrystalline graphite after high temperature irradiation

    International Nuclear Information System (INIS)

    Platonov, P.A.; Gurovich, B.A.; Shtrombakh, Ya.I.; Karpukhin, V.I.

    1985-01-01

    Transmission electron-microscopic investigation of polycrystalline graphite before and after irradiation is carried out. The direct use of graphite samples after ion thinning, as an inquiry subject is the basic peculiarity of the work. Main structural components of MPG-6 graphite before and after irradiation are revealed, the structural mechanism of the reactor graphite destruction under irradiation is demonstrated. The mean values of L αm and L cm crystallite dimensions are determined. Radiation defects, occuring in some crystallites after irradiation are revealed by the dark-field electron microscopy method

  12. Optical properties of electron-irradiated gallium phosphide

    International Nuclear Information System (INIS)

    Brailovskii, E.Yu.; Grigoryan, N.E.; Eritsyan, G.N.

    1980-01-01

    Results of optical absorption and photoconductivity measurements in the 0.1 to 2.4 eV range of GaP crystals irradiated with 7.5 and 50 MeV electrons are presented. The absorption of irradiated crystals near the edge can be represented by two exponential regions. In the free carrier absorption region one can observe as a result of irradiation a decrease of the power index p in the dependence α proportional to lambdap. Photoconductivity with long-time relaxation takes place in the spectral interval where the additional absorption is observed. The quenching of residual conductivity can be observed at hν=1.0eV. Variations in absorption and photoconductivity are attributed to the 'tails' of density states near the zone edges arising at introduction of both point defects and disordered regions. At hν=2.1eV one can observe a resonance band which is attributed to intra-centre transitions on point defects. A recovery of the optical properties of GaP at annealing is studied. In heavily irradiated GaP crystals point defects can form gatherings which display themselves as disordered regions. (author)

  13. MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Nakasu, Taizo; Sun, Wei-Che; Yamashita, Sotaro; Aiba, Takayuki; Taguri, Kosuke [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, 2-8-26, Tokyo 169-0051 (Japan); Asahi, Toshiaki [Technology Development Center, JX Nippon Mining and Metals Corporation, Hitachi 317-0056 (Japan); Togo, Hiroyoshi [NTT Microsystem Integration Laboratories, Atsugi 243-0198 (Japan)

    2014-07-15

    ZnTe epilayers were grown on transparent (10-10) oriented (m -plane) sapphire substrates by molecular beam epitaxy (MBE). Pole figure imaging was used to study the domain distribution within the layer. (211)-oriented ZnTe domains were formed on m -plane sapphire. The presence of only one kind of (211) ZnTe domain formed on the 2 -tilted m -plane sapphire substrates was confirmed. Thus, single domain (211) ZnTe epilayers can be grown on the m -plane sapphire using MBE. Although differences in the crystal structure and lattice mismatch are large, precise control of the substrate surface lattice arrangement result in the formation of high-quality epitaxial layers. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Void shrinkage in stainless steel during high energy electron irradiation

    International Nuclear Information System (INIS)

    Singh, B.N.; Foreman, A.J.E.

    1976-03-01

    During irradiation of thin foils of an austenitic stainless steel in a high voltage electron microscope, steadily growing voids have been observed to suddenly shrink and disappear at the irradiation temperature of 650 0 Cthe phenomenon has been observed in specimens both with and withoutimplanted helium. Possible mechanisms for void shrinkage during irradiation are considered. It is suggested that the dislocation-pipe-diffusion of vacancies from or of self-interstitial atoms to the voids can explain the shrinkage behaviour of voids observed during our experiments. (author)

  15. First application of hemi-body electron beam irradiation for Kaposi sarcoma at the lower extremities.

    Science.gov (United States)

    Platoni, Kalliopi; Diamantopoulos, Stefanos; Dilvoi, Maria; Delinikolas, Panagiotis; Kypraiou, Efrosyni; Efstathopoulos, Efstathios; Kouloulias, Vassilis

    2018-01-01

    Kaposi's sarcoma (KS) is a systemic neoplastic disease that can present cutaneous symptoms and is usually treated with a systematic approach due to its extent. Due to its radiosensitivity, radiotherapy is considered one of its main treatments, for palliation and local control of the skin and mucosal lesions. The aim of this paper was to report the first case of KS treated by hemi-body electron irradiation protocol in Greece. A fractionated 40 Gy hemi-body electron irradiation was prescribed to a 60-year-old male patient with KS at his legs. Dose uniformity was verified on a daily basis by thermoluminescence dosimetry (TLD). The treatment resulted to complete clinical response. Limited irradiation-derived side effects appeared. This is the first case ever to be treated with hemi-body electron irradiation protocol in Greece. To the best of our knowledge, this is also the first time that a single field hemi-body electron beam irradiation at a total skin electron beam (TSEB)-like configuration is reported to be used for KS.

  16. Efficient production of NV colour centres in nanodiamonds using high-energy electron irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Dantelle, G., E-mail: geraldine.dantelle@polytechnique.ed [Laboratoire de Physique Quantique et Moleculaire, ENS Cachan, 94 235 CACHAN Cedex (France); Laboratoire de Physique de la Matiere Condensee, Ecole Polytechnique, 91128 PALAISEAU Cedex (France); Slablab, A.; Rondin, L. [Laboratoire de Physique Quantique et Moleculaire, ENS Cachan, 94 235 CACHAN Cedex (France); Laine, F.; Carrel, F.; Bergonzo, Ph. [CEA-LIST, CEA/Saclay, 91 191 GIF-SUR-YVETTE Cedex (France); Perruchas, S.; Gacoin, T. [Laboratoire de Physique de la Matiere Condensee, Ecole Polytechnique, 91128 PALAISEAU Cedex (France); Treussart, F.; Roch, J.-F. [Laboratoire de Physique Quantique et Moleculaire, ENS Cachan, 94 235 CACHAN Cedex (France)

    2010-09-15

    Nanodiamond powders with an average size of 50 nm have been irradiated using high-energy electron beam. After annealing and chemical treatment, nanodiamond colloidal solutions were obtained and deposited on silica coverslips by spin-coating. The fluorescence of nanodiamonds was studied by confocal microscopy together with atomic force microscopy. We evaluated the proportion of luminescent nanodiamonds as a function of the irradiation duration and showed that large quantities, exceeding hundreds of mg, of luminescent nanodiamonds can be produced within 1 h of electron irradiation.

  17. Efficient production of NV colour centres in nanodiamonds using high-energy electron irradiation

    International Nuclear Information System (INIS)

    Dantelle, G.; Slablab, A.; Rondin, L.; Laine, F.; Carrel, F.; Bergonzo, Ph.; Perruchas, S.; Gacoin, T.; Treussart, F.; Roch, J.-F.

    2010-01-01

    Nanodiamond powders with an average size of 50 nm have been irradiated using high-energy electron beam. After annealing and chemical treatment, nanodiamond colloidal solutions were obtained and deposited on silica coverslips by spin-coating. The fluorescence of nanodiamonds was studied by confocal microscopy together with atomic force microscopy. We evaluated the proportion of luminescent nanodiamonds as a function of the irradiation duration and showed that large quantities, exceeding hundreds of mg, of luminescent nanodiamonds can be produced within 1 h of electron irradiation.

  18. Defects in low temperature electron irradiated InP

    International Nuclear Information System (INIS)

    Suski, J.; Bourgoin, J.

    1984-01-01

    n and p-InP has been irradiated at 25K with 1MeV electrons and the created defects were studied by deep level transient spectroscopy (DLTS) in the range 25K-400K. In n-InP, four traps are directly observed, with low introduction rates except for one. They anneal in three stages, and four new centers of still lower concentration appear after 70 0 C heat treatment. In p-InP, two dominant traps stable up to approx.= 400K with introduction rates close to the theoretical ones, which might be primary defects are found, while another one is clearly a secondary defect likely associated to Zn dopant. At least two of the low concentration irradiation induced electron traps, created between 25K and 100K are also secondary defects, which implies a mobility of some primary defects down to 100K at least. (author)

  19. Oxidative decomposition of aromatic hydrocarbons by electron beam irradiation

    Science.gov (United States)

    Han, Do-Hung; Stuchinskaya, Tatiana; Won, Yang-Soo; Park, Wan-Sik; Lim, Jae-Kyong

    2003-05-01

    Decomposition of aromatic volatile organic compounds (VOCs) under electron beam irradiation was studied in order to examine the kinetics of the process, to characterize the reaction product distribution and to develop a process of waste gas control technology. Toluene, ethylbenzene, o-, m-, p-xylenes and chlorobenzene were used as target materials. The experiments were carried out at doses ranging from 0.5 to 10 kGy, using a flow reactor utilized under electron beam irradiation. Maximum degrees of decomposition carried out at 10 kGy in air environment were 55-65% for “non-chlorinated” aromatic VOC and 85% for chlorobenzene. It was found that a combination of aromatic pollutants with chlorobenzene would considerably increase the degradation value up to nearly 50% compared to the same compounds in the absence of chlorine groups. Based on our experimental observation, the degradation mechanism of the aromatic compounds combined with chloro-compound suggests that a chlorine radical, formed from EB irradiation, induces a chain reaction, resulting in an accelerating oxidative destruction of aromatic VOCs.

  20. 1-Chloronaphthalene decomposition in air using electron beam irradiation

    International Nuclear Information System (INIS)

    Chmielewski, A.G.; Sun, Y.; Bulka, S.; Zimek, Z.

    2006-01-01

    A method for the preparation of model gas containing 1-chloronaphthalene can be referred to 1,1-DCE (dichloroethene). A pulsed electron beam (EB) accelerator ILU-6 (2.0 MeV max., 20 kW max.) was used as an irradiation source. The absorbed dose rate inside the irradiation vessel was 10.835 kGy/min. Total absorbed dose was adjusted by changing irradiation time of the Pyrex glass vessels. 1-Chloronaphthalene concentration was analyzed using gas-chromatography. It has been found, that 1-chloronaphthalene can be decomposed in air or N 2 using EB irradiation. Decomposition efficiency of 1-chloronaphthalene in air is higher than that in N 2 . Positive charge transfer reactions and OH radicals' reaction may play a main role in 1-chloronaphthalene decomposition process

  1. 78 FR 27303 - Irradiation in the Production, Processing, and Handling of Animal Feed and Pet Food; Electron...

    Science.gov (United States)

    2013-05-10

    ...-0178] Irradiation in the Production, Processing, and Handling of Animal Feed and Pet Food; Electron... electron beam and x-ray sources for irradiation of poultry feed and poultry feed ingredients. This action... CFR part 579) to provide for the safe use of electron beam and x-ray sources for irradiation of...

  2. Micro-Raman and photoluminescence studies of neutron-irradiated gallium nitride epilayers

    International Nuclear Information System (INIS)

    Wang, R.X.; Xu, S.J.; Fung, S.; Beling, C.D.; Wang, K.; Li, S.; Wei, Z.F.; Zhou, T.J.; Zhang, J.D.; Huang Ying; Gong, M.

    2005-01-01

    GaN epilayers grown on sapphire substrate were irradiated with various dosages of neutrons and were characterized using Micro-Raman and photoluminescence. It was found that the A 1 (LO) peak in the Raman spectra clearly shifted with neutron irradiation dosage. Careful curve fitting of the Raman data was carried out to obtain the carrier concentration which was found to vary with the neutron irradiation dosage. The variation of the full width at half maximum height of the photoluminescence was consistent with the Raman results. The neutron irradiation-induced structural defects (likely to be Ge Ga ) give rise to carrier trap centers which are responsible for the observed reduction in carrier concentration of the irradiated GaN

  3. Investigations on the optical, thermal and surface modifications of electron irradiated L-threonine single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Ramesh Kumar, G.; Gokul Raj, S. [Department of Physics, Presidency College, Chepauk, Chennai 600005 (India); Bogle, K.A.; Dhole, S.D.; Bhoraskar, V.N. [Department of Physics, University of Pune, Pune 411007 (India); Mohan, R. [Department of Physics, Presidency College, Chepauk, Chennai 600005 (India)], E-mail: professormohan@yahoo.co.in

    2008-06-15

    L-Threonine single crystals have been irradiated by 6 MeV electrons. Irradiated crystals at various electron fluences were subjected to various techniques such as UV-vis-NIR, atomic force microscopy (AFM) and thermomechanical analyses. Thermal strength of the irradiated crystals has also been studied through differential scanning calorimetry (DSC) measurements. The results have been discussed in detail.

  4. Electron beam irradiation effect on nanostructured molecular sieve catalysts

    International Nuclear Information System (INIS)

    Yuan Zhongyong; Zhou Wuzong; Parvulescu, Viorica; Su Baolian

    2003-01-01

    Electron impact can induce chemical changes on particle surfaces of zeolites and molecular sieve catalysts. Some experimental observations of electron irradiation effect on molecular sieve catalysts are presented, e.g., electron-beam-induced growth of bare silver nanowires from zeolite crystallites, formation of vesicles in calcium phosphate, migration of microdomains in iron-oxide doped mesoporous silicas, structural transformation from mesostructured MCM-41 to microporous ZSM-5, etc. The formation mechanisms of the surface structures are discussed

  5. An investigation of the electron irradiation of graphite in a helium atmosphere using a modified electron microscope

    International Nuclear Information System (INIS)

    Burden, A.P.; Hutchison, J.L.

    1997-01-01

    The behaviour of graphite particles immersed in helium gas and irradiated with an electron-beam has been investigated. Because this treatment was performed in a modified high resolution transmission electron microscope, the rapid morphological and microstructural changes that occurred could be directly observed. The results have implications for future controlled environment microscopy of carbonaceous materials and the characterisation of such microscopes. It is also shown that the processes can provide insight into ion-irradiation induced damage of graphite and the mechanism of fullerene generation. (Author)

  6. Evaluation of induced radioactivity in 10 MeV electron-irradiated spices

    Energy Technology Data Exchange (ETDEWEB)

    Furuta, Masakazu; Ito, Norio; Mizohata, Akira; Matsunami, Tadao; Katayama, Tadashi; Toratani, Hirokazu (Osaka Prefectural Univ., Sakai (Japan). Research Inst. for Advanced Science and Technology); Takeda, Atsuhiko

    1993-10-01

    In order to make clear appreciation to induced radioactivity in the irradiated foods, photonuclear reactions which could produce radioactivity at energies up to 10 MeV were listed up from elemental compositions of black pepper, white pepper, red pepper, ginger and turmeric. The samples were irradiated with 10 MeV electron from a linear accelerator to a dose of 100 kGy and radioactivity was measured. Induced radioactivity could not be detected significantly by gamma-ray spectrometry and beta-ray counting in the irradiated samples except for spiked samples which contain some photonuclear target nuclides in the list. From the amount of observed radioactivities of short-lived photonuclear products in the spiked samples and calculation of H[sub 50] according to ICRP Publication 30, it was concluded that the induced radioactivity and its biological effects in the 10 MeV electron-irradiated natural samples were negligible in comparison with natural radioactivity from [sup 40]K contained in the samples. (J.P.N.).

  7. Study of point defect mobilities in zirconium during electron irradiation in a HVEM

    International Nuclear Information System (INIS)

    Griffiths, M.

    1993-01-01

    A high voltage electron microscope (HVEM) was used to investigate the nature of intrinsic point defects in α-Zr by direct observation of dislocation climb and cavity growth or shrinkage. The material used was Marz-grade Zr that had been pre-irradiated with neutrons at about 740 K in the Dounreay Fast Reactor. Dislocation loops of vacancy character that had been produced during the neutron irradiation were studied by further irradiation with electrons in the HVEM. Growth of the loops was observed at temperatures as low as 230 K, indicating that, under the conditions of the experiment, some vacancy-type defects were mobile in the temperature regime 230 K-300 K. The nature of these defects is unknown. One possibility is that these defects are not intrinsic in nature, but may be vacancy-Fe complexes. In addition to the climb of dislocation loops, c-component network dislocations and cavities were also studied. Basal plane climb of the network dislocations was observed at 573 K, but was not readily apparent at 320 K. This suggests that preferred climb planes (and possibly loop habit planes) are sensitive to temperature. Cavities that were already in the foil after neutron irradiation or were induced by electron irradiation grew along the c-axis and shrank along a-directions during electron irradiation. This radiation-induced shape change of the cavities strongly suggests the existence of a diffusional anisotropy difference between interstitials and vacancies in α-Zr. (Author) 14 figs., 22 refs

  8. Effect of electron beam irradiation on the thermal properties of polycarbonate / polyester blend

    International Nuclear Information System (INIS)

    Zarie, K.A.

    2007-01-01

    The effect of electron beam irradiation on the thermal properties of Bayfol (polycarbonate/polyester blend) solid state nuclear track detector (SSNTD) was investigated. Non-isothermal studies were carried out using thermogravimetric analysis (TGA) and differential thermogravimetric (DTG) to obtain the activation energy of thermal decomposition for Bayfol detector. The thermogravimetric analysis (TGA) indicated that the Bayfol samples were decomposed in one main break down stage. Samples of 250 μm thickness sheets were exposed to electron beam irradiations in the dose range 20-600 KGy. The variation of melting temperatures with the electron dose was determined using differential thermal analysis (DTA). The results indicated that the electron irradiation in the dose range 200-600 KGy decreases the melting temperature of the Bayfol samples and this is most suitable for applications requiring the molding of this polymer at lower temperatures

  9. Magnetic, thermal and luminescence properties in room-temperature nanosecond electron-irradiated various metal oxide nanopowders

    Science.gov (United States)

    Sokovnin, S. Yu; Balezin, M. E.; Il’ves, V. G.

    2018-03-01

    By means of pulsed electron beam evaporation in vacuum of targets non-magnetic, in bulk state, Al2O3 and YSZ (ZrO2-8% Y2O3) oxides, magnetic nanopowders (NPs) with a high specific surface were produced. The NPs were subsequently irradiated in air by electrons with energy of 700 keV, using a URT-1 accelerator for 15 and 30 minutes. The magnetic, thermal, and pulsed cathodoluminescence (PCL) characteristics of NPs were measured before and after irradiation. It was established that the electron irradiation non-monotonically changes the magnetization of the pristine samples. To the contrary, a clear correlation between the intensity of PCL and the irradiation doses is found in the oxides. There was a decrease in the intensity of PCL after irradiation. Luminescent and thermal properties reflect the transformation of structural defects in NPs more strongly after the exposure to a pulsed electron beam in comparison with corresponding changes of the NPs magnetic response.

  10. Comparison of electron and ion irradiation effects on order-disorder transition in Ni4Mo

    International Nuclear Information System (INIS)

    Banerjee, S.; Sundararaman, M.

    1996-01-01

    The effects of radiation damage in metals and alloys caused by electron and heavy ion beams are quite distinct from the consideration of cascade formation. Microstructural changes occurring with progressive dose of irradiation under cascade forming heavy ion irradiation and under electron irradiation have been systematically studied in Ni 4 Mo in the temperature range of 300 to 1050 K. The ordering transformation in this alloy can be used in understanding the fundamental processes of radiation damage. Conversely, radiation experiments provide an insight into the ordering mechanisms. The ordering in this alloy is governed by a competition between a second order and a first order ordering process. Steady state structures developed at different temperatures have been characterised by electron diffraction and imaging. The steady state diagrams are constructed and compared for both electron and ion irradiation. The essential difference between the nature of cascade forming and non-cascade forming irradiation on the order-disorder transformation has been discussed. (orig.)

  11. Engineering of electronic properties of single layer graphene by swift heavy ion irradiation

    Science.gov (United States)

    Kumar, Sunil; Kumar, Ashish; Tripathi, Ambuj; Tyagi, Chetna; Avasthi, D. K.

    2018-04-01

    In this work, swift heavy ion irradiation induced effects on the electrical properties of single layer graphene are reported. The modulation in minimum conductivity point in graphene with in-situ electrical measurement during ion irradiation was studied. It is found that the resistance of graphene layer decreases at lower fluences up to 3 × 1011 ions/cm2, which is accompanied by the five-fold increase in electron and hole mobilities. The ion irradiation induced increase in electron and hole mobilities at lower fluence up to 1 × 1011 ions/cm2 is verified by separate Hall measurements on another irradiated graphene sample at the selected fluence. In contrast to the adverse effects of irradiation on the electrical properties of materials, we have found improvement in electrical mobility after irradiation. The increment in mobility is explained by considering the defect annealing in graphene after irradiation at a lower fluence regime. The modification in carrier density after irradiation is also observed. Based on findings of the present work, we suggest ion beam irradiation as a useful tool for tuning of the electrical properties of graphene.

  12. Investigation of the combined effect of neutron irradiation and electron beam exposure on pure tungsten

    Energy Technology Data Exchange (ETDEWEB)

    Van Renterghem, W., E-mail: wvrenter@sckcen.be; Uytdenhouwen, I., E-mail: iuytdenh@sckcen.be

    2016-08-15

    Pure tungsten samples were neutron irradiated in the BR2 reactor of SCK·CEN to fluences of 1.47 × 10{sup 20} n/cm{sup 2} and 4.74 × 10{sup 20} n/cm{sup 2} at 300 °C under Helium atmosphere and exposed to the electron beam of the Judith 1 installation The effect of these treatments on the defect structure was studied with transmission electron microscopy. In the irradiated samples the defect structure in the bulk is compared to the structure at the surface. The neutron irradiation created a large amount of a/2‹111› type dislocation loops forming dislocation rafts. The loop density increased from 8.5 × 10{sup 21}/m³ to 9 × 10{sup 22}/m³ with increasing dose, while the loop size decreased from 5.2 nm to 3.5 nm. The electron beam exposure induced significant annealing of the defects and almost all of the dislocation loops were removed. The number of line dislocations in that area increased as a result of the thermal stresses from the thermal shock. - Highlights: • Neutron irradiated and electron beam exposed tungsten samples were studied with transmission electron microscopy. • Neutron irradiation creates dislocation loops and rafts, while voids are created at higher irradiation dose. • No precipitates of transmutation products were found under these low dose irradiation conditions. • Electron beam exposure annihilates the dislocation loops and rafts.

  13. Use of electron accelerators in food irradiation

    International Nuclear Information System (INIS)

    Sanyal, Bhaskar

    2013-01-01

    Preservation of food by ionizing radiations involves controlled application of energy of radiation to agricultural commodities, foods and food ingredients, for improving storage life, hygiene and safety. Insects and microbes cause major economic losses to stored crops. Many of our food products are contaminated with diseases causing germs and toxin producing molds. Without improvement in microbial quality and getting properly treated to overcome quarantine barriers our agricultural products cannot get international markets. In this respect electron accelerators have immense potential in commercial radiation processing of foods. Both low and high dose applications with increased process rates can be achieved using accelerators to cover a wide spectrum of food commodities approved for commercial radiation processing as per the recent gazette notification under Atomic Energy (Radiation Processing of Food and Allied Products) Rule, 2012. The effectiveness of processing of food by ionizing radiation depends on proper delivery of absorbed dose and its reliable measurement. For food destined for international trade, it is important that the dosimetry used for dose determination is carried out accurately and that the process is monitored in accordance with the internationally accepted procedures. Experiments using alanine-EPR system were carried out to optimize the process parameters of 10 MeV electron beam for commercial irradiation of food. Different food commodities namely, mango, potato and rawa (semolina) were irradiated to measure the absorbed dose distribution. The actual depth dose profile in food products and useful scan width of the electron beam were determined for commercial radiation processing of food using electron beam. (author)

  14. Electron irradiation effect on the reverse phase transformation temperatures in TiNi shape memory alloy thin films

    International Nuclear Information System (INIS)

    Wang, Z.G.; Zu, X.T.; Fu, Y.Q.; Zhu, S.; Wang, L.M.

    2005-01-01

    In this work, Ti-Ni shape memory alloy thin films were irradiated by 1.7 MeV electron with three types of fluences: 4 x 10 20 , 7 x 10 20 and 1 x 10 21 /m 2 . The influence of electron irradiation on the transformation behavior of the TiNi thin films were investigated by differential scanning calorimetry. The transformation temperatures A s and A f shifted to higher temperature after electron irradiation, the martensite was stabilized. The electron irradiation effect can be easily eliminated by one thermal cycle. The shifts of the transformation temperatures can be explained from the change of potential energy barrier and coherency energy between parent phase and martensite after irradiation

  15. Pre-feasibility study of electron beam irradiation of fresh water

    International Nuclear Information System (INIS)

    Finshi V, Silvia.

    1997-01-01

    A technical/economic evaluation of electron beam irradiation for the decontamination of liquids in the country is presented. Irradiation of fresh water is evaluated for the production of drinking water as a replacement for chlorine disinfection, which can lead to the formation of tri halo methanes. that are carcinogenic compounds. The technical literature states that the percentage of microorganisms removed by electro beam irradiation is high and similar to that found with chlorine disinfection. From an economic point of view, irradiation technology is not presently competitive as an alternative to conventional chlorination in terms of processing costs (US$0.23/m 3 ) instead of US$0.013/m 3 for conventional chlorination. Nevertheless, irradiation costs decreased sharply when unit costs for the accelerator machine are decreased with a resulting drop in capital costs

  16. Electron and photon emissions from gold nanoparticles irradiated by X-ray photons

    Energy Technology Data Exchange (ETDEWEB)

    Casta, R., E-mail: castaromain@gmail.com, E-mail: romain.casta@irsamc.ups-tlse.fr; Champeaux, J.-P.; Moretto-Capelle, P.; Sence, M.; Cafarelli, P. [Université de Toulouse, UPS, Laboratoire Collisions Agrégats Réactivité, IRSAMC, CNRS, UMR 5589 (France)

    2015-01-15

    In this paper, we develop a totally new probabilistic model for the electron and photon emission of gold nanoparticles irradiated by X-ray photons. This model allows direct applications to recent researches about the radiotherapy enhancement by gold nanoparticles in the context of cancer treatment. Our model uses, in a complete original way, simulated Auger cascade and stopping power to compute electron emission spectra, photon emission spectra and released energy inside the material of gold nanoparticles. It allows us to present new results about the electron and photon emission of gold nanoparticle irradiated by hard X-rays.

  17. Self-assembled growth and structural analysis of inclined GaN nanorods on nanoimprinted m-sapphire using catalyst-free metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Kyuseung; Chae, Sooryong; Jang, Jongjin; Min, Daehong; Kim, Jaehwan; Nam, Okhyun, E-mail: ohnam@kpu.ac.kr [Convergence Center for Advanced Nano Semiconductor (CANS), Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, 15073 (Korea, Republic of)

    2016-04-15

    In this study, self-assembled inclined (1-10-3)-oriented GaN nanorods (NRs) were grown on nanoimprinted (10-10) m-sapphire substrates using catalyst-free metal-organic chemical vapor deposition. According to X-ray phi-scans, the inclined GaN NRs were tilted at an angle of ∼57.5° to the [10-10]{sub sapp} direction. Specifically, the GaN NRs grew in a single inclined direction to the [11-20]{sub sapp}. Uni-directionally inclined NRs were formed through the one-sided (10-11)-faceted growth of the interfacial a-GaN plane layer. It was confirmed that a thin layer of a-GaN was formed on r-facet nanogrooves of the m-sapphire substrate by nitridation. The interfacial a-GaN nucleation affected both the inclined angle and the growth direction of the inclined GaN NRs. Using X-ray diffraction and selective area electron diffraction, the epitaxial relationship between the inclined (1-10-3) GaN NRs and interfacial a-GaN layer on m-sapphire substrates was systematically investigated. Moreover, the inclined GaN NRs were observed to be mostly free of stacking fault-related defects using high-resolution transmission electron microscopy.

  18. Transmission electron microscope study of neutron irradiation-induced defects in silicon

    International Nuclear Information System (INIS)

    Oshima, Ryuichiro; Kawano, Tetsuya; Fujimoto, Ryoji

    1994-01-01

    Commercial Czochralski-grown silicon (Cz-Si) and float-zone silicon (Fz-Si) wafers were irradiated with fission neutrons at various fluences from 10 19 to 10 22 n/cm 2 at temperatures ranging from 473 K to 1043 K. The irradiation induced defect structures were examined by transmission electron microscopy and ultra high voltage electron microscopy, which were compared with Marlowe code computer simulation results. It was concluded that the vacancy-type damage structure formed at 473 K were initiated from collapse of vacancy-rich regions of cascades, while interstitial type defect clusters formed by irradiation above 673 K were associated with interstitial oxygen atoms and free interstitials which diffused out of the cascades. Complex defect structures were identified to consist of {113} and {111} planar faults by the parallel beam illumination diffraction analysis. (author)

  19. Extractable proteins from electron beam (EB) irradiated natural rubber (NR) latex

    International Nuclear Information System (INIS)

    Feroza Akhtar; Fumio Yoshii; Keizo Makuuchi

    1996-01-01

    The protein assay of natural rubber latex (NRL) vulcanized by low energy electron beam (EB, 300 keV, 30 mA) has been carried out using Bicinchoninic acid (BCA) reagent. Extractable protein in irradiated latex film was determined by measuring the absorption of colored solution at 562 nm using UV spectrometer. The effect of various radiation doses on the extractable protein content of NRL was investigated. It was ,found that the quantities of extractable protein increases with radiation dose. When compared with ,gamma-ray irradiated samples the same trend was observed. Electron beam irradiated latex films are leached in 1% (ammonia water for various lengths of time. From the results it was established that within 2 hours of leaching in ammonia water most of the extractable protein (96%) were removed from rubber film

  20. Effects of electron beam irradiation on ethylene-octene copolymers (octene rubber)

    International Nuclear Information System (INIS)

    Harris C Raj Kumar; Mansor Ahmad; Khairul Zaman Mohd Dahlan

    2002-01-01

    The effect of electron irradiation on a ethylene-octene copolymer was investigated. The optimal blending speed, blending temperature and hot press temperature were first optimized to 40 rpm, 185 degree C and 180 degree C, respectively. The ethylene octene copolymer was then irradiated with electron beam from doses in the range of 20 kGy up to 200 kGy. The physical changes occurred were examined from the point of tensile strength tests, elongation at break, tensile modulus, hardness (Shore A) and gel content, and compared with a set of un-irradiated sample. Almost all the tests signify that cross-linking was the predominant reaction rather than chain scission, especially in gel content test. The hardness test was inconclusive as there were no significant changes that occurred. (Author)

  1. Void formation in pure aluminium irradiated with high-energetic electron beams and gamma-quanta

    DEFF Research Database (Denmark)

    Gan, V. V.; Ozhigou, L. S.; Yamnitsky, V. A.

    1983-01-01

    The spatial distribution of displaced atoms and helium atoms and also the spectra of damaging energies of primary displaced atoms in a thick aluminium target irradiated with electrons of 225 MeV energy were calculated. Pure aluminium (99.9999%) irradiated up to 0.04 dose was studied by electron...

  2. Detection of irradiated deboned turkey meat using electron spin resonance spectroscopy

    International Nuclear Information System (INIS)

    Gray, Richard; Stevenson, M.H.

    1989-01-01

    Bone fragments were extracted from two blocks of frozen deboned turkey meat (irradiated and non-irradiated) using alcoholic KOH digestion. Electron spin resonance (ESR) spectroscopy was used to differentiate between the samples. Comparison of an alcoholic KOH digestion procedure with a freeze drying and grinding method showed that the former method gave a signal which was 78% of that obtained using the freeze drying procedure. Regression analysis of the results obtained after subjection of the original non-irradiated sample to irradiation doses of 3.0, 5.0 and 7.0 kGy gave a linear relationship between irradiation dose and ESR signal strength over this range. Using this relationship the estimated mean dose received by the irradiated block was 4.72 kGy. (author)

  3. Evaluation of induced radioactivity in 10 MeV-electron irradiated spices, (1)

    International Nuclear Information System (INIS)

    Furuta, Masakazu; Katayama, Tadashi; Ito, Norio; Mizohata, Akira; Matsunami, Tadao; Shibata, Setsuko; Toratani, Hirokazu; Takeda, Atsuhiko.

    1994-01-01

    Black pepper, white pepper, red pepper, ginger and turmeric were irradiated with 10 MeV electrons from a linear accelerator to a dose of 100 kGy and radioactivity was measured in order to estimate induced radioactivity in the irradiated foods. Induced radioactivity could not be detected significantly by γ-ray spectrometry in the irradiated samples except for spiked samples which contain some photonuclear target nuclides in the list of photonuclear reactions which could produce radioactivity below 10 MeV. From the amount of observed radioactivities of short-lived photonuclear products in the spiked samples and calculation of H 50 according to ICRP Publication 30, it was concluded that the induced radioactivity and its biological effects in the 10 MeV electron-irradiated natural samples were negligible in comparison with natural radioactivity from 40 K contained in the samples. (author)

  4. Preliminary examination of induced radioactivity in pepper by 10 MeV electron irradiation

    International Nuclear Information System (INIS)

    Katayama, Tadashi; Furuta, Masakazu; Sibata, Setsuko; Ito, Norio; Mizohata, Akira; Matsunami, Tadao; Toratani, Hirokazu; Takeda, Atsuhiko.

    1991-01-01

    β-ray measurement was performed on 10 MeV electron-irradiated black pepper and white pepper with liquid scintillation counter in order to reconfirm the wholesomeness of irradiated foods and present unambiguous data to general consumers concerning about the induced radioactivity in the irradiated foods. In irradiated black pepper no radioactivity other than from natural source, un-irradiated one, was detected. But in irradiated white pepper, it was suggested that induced radioactivity might be detected if the detection method was more improved. (author)

  5. Optical and Morphological Properties of Electron-Beam Irradiated High-Density Thin Poly Ethylene Films

    International Nuclear Information System (INIS)

    Abdel-Hamid, H. M.; Fawzy, Y.H.A.; El-Sayed, S.M.

    2005-01-01

    Effects of surface morphology alterations on the optical properties of the high-density polyethylene (HDPE) films irradiated by 1.5 MeV electron beam has been investigated. The irradiation doses were conducted at the values: 30, 135, 295 and 540 kGy, respectively. The changes induced in HDPE involved: the creation of free radicals, the formation of chemical bonds i.e., intermolecular crosslinking and irreversible cleavage of bonds in the main chain, which resulted in the fragmentation of the molecules. An Ultraviolet-Visible Spectrophotometer (UV-VIS) and Scanning Electron Microscope (SEM) were used to characterize the changes. Because the crosslinking (induced by electron irradiation) limits the movability of the HDPE molecular chains, the optical energy gap was then subjected to a change. It decreased from 4.41 to 3.22 eV with an increasing electron dose up to 540 kGy. At a higher dose of irradiation (540 kGy), degradation of HDPE rather than crosslinking was raised. The irradiated HDPE films indicated that the crosslinking and degradation are likely to have an effect on their surface morphologies. The physical properties of polymeric materials can be modified by ionizing radiation in the form of gamma rays, X-rays and energetic electrons. High-energy electron beam is an especially useful tool in this regard (Cleland et al, 2003). Polymerizing, grafting, crosslinking and chain scission reactions can be initiated by irradiation. The results of such reactions can enhance the utility and value of commercial products. HDPE (CH2-CH2) has many attractive properties, such as an excellent chemical resistance, low friction and low moisture absorption

  6. Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Amano, Hiroshi [Department of Electrical Engineering and Computer Science, Venture Business Laboratory, Akasaki Research Center, Nagoya University (Japan)

    2015-06-15

    This is a personal history of one of the Japanese researchers engaged in developing a method for growing GaN on a sapphire substrate, paving the way for the realization of smart television and display systems using blue LEDs. The most important work was done in the mid to late 1980s. The background to the author's work and the process by which the technology enabling the growth of GaN and the realization of p-type GaN was established are reviewed. (copyright 2015 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Growth of GaN Layers on Sapphire by Low-Temperature-Deposited Buffer Layers and Realization of p-type GaN by Magesium Doping and Electron Beam Irradiation (Nobel Lecture).

    Science.gov (United States)

    Amano, Hiroshi

    2015-06-26

    This Review is a personal reflection on the research that led to the development of a method for growing gallium nitride (GaN) on a sapphire substrate. The results paved the way for the development of smart display systems using blue LEDs. The most important work was done in the mid to late 80s. The background to the author's work and the process by which the technology that enables the growth of GaN and the realization of p-type GaN was established are reviewed. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Challenges in validating radiation sterilization with low energy electron irradiation

    International Nuclear Information System (INIS)

    Miller, A.; Helt-Hansen, J.

    2011-01-01

    Complete text of publication follows. Low energy electron irradiation (80-300 keV) is used increasingly for sterilization or decontamination in connection with isolators for aseptic filling lines in the pharmaceutical industry. It is not defined how validation for this process shall be carried out. A method can be derived from the medical device standard for radiation sterilization, ISO 11137, because the principles described in this standard can be applied to almost any industrial irradiation process. The validations elements are: Process definition, concerning specification of the dose required for the process and the maximum acceptable dose for the product. Installation qualification, concerning acceptance the irradiation facility. Operational qualification, concerning characterization of the facility. Performance qualification, concerning setting up the process. Process control, concerning routine monitoring. The limited penetration of the low energy electrons leads to problems with respect to executing these validation steps. This paper discusses these problems, and shows with examples how they can be solved.

  9. SERS Raman Sensor Based on Diameter-Modulated Sapphire Fiber

    Energy Technology Data Exchange (ETDEWEB)

    Shimoji, Yutaka

    2010-08-09

    Surface enhanced Raman scattering (SERS) has been observed using a sapphire fiber coated with gold nano-islands for the first time. The effect was found to be much weaker than what was observed with a similar fiber coated with silver nanoparticles. Diameter-modulated sapphire fibers have been successfully fabricated on a laser heated pedestal growth system. Such fibers have been found to give a modest increase in the collection efficiency of induced emission. However, the slow response of the SERS effect makes it unsuitable for process control applications.

  10. Electron-trapping probability in natural dosemeters as a function of irradiation temperature

    DEFF Research Database (Denmark)

    Wallinga, J.; Murray, A.S.; Wintle, A.G.

    2002-01-01

    The electron-trapping probability in OSL traps as a function of irradiation temperature is investigated for sedimentary quartz and feldspar. A dependency was found for both minerals; this phenomenon could give rise to errors in dose estimation when the irradiation temperature used in laboratory...... procedures is different from that in the natural environment. No evidence was found for the existence of shallow trap saturation effects that Could give rise to a dose-rate dependency of electron trapping....

  11. Study on detection of electron beam irradiated food by ESR spectroscopy and comparison of the ESR spectrum of electron beams and γ-rays

    International Nuclear Information System (INIS)

    Li Weiming; Ha Yiming; Wang Feng

    2012-01-01

    The study was conducted to detect electron beam irradiated food by ESR spectroscopy. The white pepper powder, paprika powder, cumin powder and pistachios were used as test materials to study the feature changes of ESR spectrum and the relationship between ESR intensity and irradiation dose in different doses, the shape variation of ESR spectrum in γ-rays and electron beams in the same sample was also compared. The results showed that the ESR spectrum of 4 kinds of irradiated samples was obviously different before and after irradiation, the intensity of ESR signal increased with the increasing of the absorbed dose. The dose above 432 Gy could be detected in white pepper powder and pistachios, the dose above 875 Gy could be detected in paprika powder and cumin powder. The ESR intensity of all samples decreased during the storage time (200 d), even after 200 days the ESR method could also be used to detect whether or not the samples have been irradiated. The same dosage of y-rays and electron beams has no significant influence on the shape of ESR spectrum, however, the difference of irradiation mechanism caused slight impact on ESR intensity. The results could provide the technical basis for the application of ESR method in detecting electron beam irradiated food. (authors)

  12. Study on detection of electron beam irradiated food by ESR spectroscopy and comparison of the ESR spectrum of electron beams and γ-rays

    International Nuclear Information System (INIS)

    Li Weiming; Ha Yiming; Wang Feng

    2011-01-01

    The study was conducted to detect electron beam irradiated food by ESR spectroscopy. The white pepper powder, paprika powder, cumin powder and pistachios were used as test materials to study the feature changes of ESR spectrum and the relationship between ESR intensity and irradiation dose in different doses, the shape variation of ESR spectrum in γ-rays and electron beams in the same sample was also compared. The results showed that the ESR spectrum of 4 kinds of irradiated samples was obviously different before and after irradiation, the intensity of ESR signal increased with the increasing of the absorbed dose. The dose above 432 Gy could be detected in white pepper powder and pistachios, the dose above 875 Gy could be detected in paprika powder and cumin powder. The ESR intensity of all samples decreased during the storage time (200 d), even after 200 days the ESR method could also be used to detect whether or not the samples have been irradiated. The same dosage of γ-rays and electron beams has no significant influence on the shape of ESR spectrum, however, the difference of irradiation mechanism caused slight impact on ESR intensity. The results could provide the technical basis for the application of ESR method in detecting electron beam irradiated food. (authors)

  13. Single-crystalline AlN growth on sapphire using physical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Cardenas-Valencia, Andres M., E-mail: andres.cardenas@sri.co [SRI International (United States); Onishi, Shinzo; Rossie, Benjamin [SRI International (United States)

    2011-02-07

    A novel technique for growing single crystalline aluminum nitride (AlN) films is presented. The novelty of the technique, specifically, comes from the use of an innovative physical vapor deposition magnetron sputtering tool, which embeds magnets into the target material. A relatively high deposition rates is achieved ({approx}0.2 {mu}m/min), at temperatures between 860 and 940 {sup o}C. The AlN, grown onto sapphire, is single-crystalline as evidenced by observation using transmission electron microscopy. Tool configuration and growth conditions are discussed, as well as a first set of other analytical results, namely, x-ray diffraction and ultraviolet-visible transmission spectrophotometry.

  14. Multiwalled carbon nanotube destruction in the radiation damages to electron irradiation

    Directory of Open Access Journals (Sweden)

    T. M. Pinchuk-Rugal’

    2015-10-01

    Full Text Available Behavior of the X-ray diffraction and vibrational Raman spectra of multiwalled carbon nanotubes (MWCNT under high-energy electron irradiation (Ee = 1.8 MeV with large doses of absorption to 10 MGy were studied. With increasing dose uptake to 10.0 MGy, the interlayer correlation in the distribution of the individual graphene nanotubes nets not only is maintained, but is even improved. Defective bands D, D' and G band with increasing dose absorption have significant transformation, which show radiation damages of MWCNT. The destruction of nanotubes under electron irradiation is accompanied by increased regulation in the arrangement of individual nanotubes by interlayer cross-links involving interstitial atoms. The severity of degradation and cross-linking of MWCNT depends on the electron absorption dose.

  15. Electron beam irradiation of sun-dried apricots for quality maintenance

    International Nuclear Information System (INIS)

    Wei, Ming; Zhou, Linyan; Song, Hongbo; Yi, Jianyong; Wu, Bin; Li, Yaru; Zhang, Le; Che, Fengbin; Wang, Zhidong; Gao, Meixu

    2014-01-01

    The chemical, sensory, and microbial quality parameters of electron beam (EB)-irradiated and non-irradiated sun-dried apricots were periodically evaluated to optimize the EB irradiation of sun-dried apricots for quality maintenance. The sun-dried apricots were treated with 1.0, 2.0, 3.0, 4.0, and 5.0 kGy of EB and subsequently stored at ambient temperature. EB treatment at 1.0–3.0 kGy proved to be beneficial for retaining high levels of β-carotene, ascorbic acid, titratable acidity, total sugars, and color without any significant effect on sensory properties. Doses of 1.0–3.0 kGy retained the β-carotene content of sun-dried apricots to 8.21%, 9.27%, and 10.43% compared with 6.09% in control samples after 10 months of storage. After 10 months of storage, the maximum losses of ascorbic acid were 37.8% in control samples and 35.5% in 3.0 kGy-irradiated samples. Titratable acidity and total sugars were significantly enhanced immediately after 1.0–3.0 kGy irradiation treatment, and both parameters showed no significant change after 10 months of storage. Samples subjected to EB treatment at 3.0 kGy maintained a high overall acceptability of sun-dried apricots. Decreased number of viable microorganisms to below detection limits were observed after 3.0 kGy irradiation, and compared with the control, the logarithmic reductions after 10 months of storage were 0.98 for yeast and mold count, as well as 1.71 for bacterial count. - Highlights: • Electron beam irradiation was used for sun-dried apricots quality maintenance. • The chemical, sensory, and microbial quality parameters of apricots were evaluated. • 1.0–3.0 kGy proved to be beneficial for retaining high levels of apricots quality. • 3.0 kGy of irradiation maintained a high overall acceptability of sun-dried apricots. • 3.0 kGy of irradiation reduced the viable microorganisms to below detection limits

  16. Irradiation Effects of Electron Beam on Optical Fibers

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jin Kyu; Cho, Gyu Seong [KAIST, Daejeon (Korea, Republic of); Choi, Hong Gu; Oh, Kyung Hwan [Yonsei University, Seoul (Korea, Republic of); Cho, Ho Jin [Nucron Co. Ltd., Seoul (Korea, Republic of)

    2009-10-15

    The surveillance or monitoring systems used in space station, nuclear power plant and nuclear waste repository, are often equipped with optical fibers to remotely locating expensive camera systems so as to protect them from direct irradiation. Especially in nuclear power plant and nuclear waste repository, irradiation by gamma-ray and beta-ray are most concerned. The effective life-time of such surveillance system may depend on the soundness of the optical fiber because it is the component to be exposed the high intensity of radiation field by purpose. Though the degradation of mechanical properties such as hardness and elasticity may occur but the degradation of the optical property such as spectral transmittance is the most possible cause of the effective life-time limitation. Generally 30 % reduction of light signal transmittance is considered as the life-time threshold point of such optical systems. In this paper, we studied irradiation effects on spectral transparency of various commonly-used optical fibers with high energy electron beam to conveniently simulate the both gamma-ray and beta-ray irradiation situation.

  17. Electron irradiated liquid encapsulated Czochralski grown undoped gallium antimonide studied by positron lifetime spectroscopy and photoluminescence

    International Nuclear Information System (INIS)

    Ma, S K; Lui, M K; Ling, C C; Fung, S; Beling, C D; Li, K F; Cheah, K W; Gong, M; Hang, H S; Weng, H M

    2004-01-01

    Electron irradiated undoped liquid encapsulated Czochralski (LEC) grown GaSb samples were studied by positron lifetime spectroscopy (PLS) and photoluminescence (PL). In addition to the 315 ps component reported in the previous studies, another defect with a lifetime of 280 ps was also identified in the present electron irradiated samples. The bulk lifetime of the GaSb material was found to be 258 ps. The V Ga,280ps and the V Ga,315ps defects were associated with two independent Ga vacancy related defects having different microstructures. The well known 777 meV PL signal (usually band A) was also observed in the electron irradiated undoped GaSb samples. The band A intensity decreases with increasing electron irradiation dosage and it disappears after the 300 deg. C annealing regardless of the irradiation dosage. The origin of the band A signal is also discussed

  18. Study on application of the physical detection methods for electron beam-irradiated agricultural products

    International Nuclear Information System (INIS)

    Kim, Dong Yong; Park, Yong Dae; Jin, Chang Hyun; Choi, Dae Seong; Jeong, Il Yun; Yook, Hong Sun

    2010-01-01

    Physical detection methods, photostimulated luminescence (PSL), thermoluminescence (TL) and electron spin resonance (ESR) were applied to detect electron beam-irradiated agricultural products, such as red pepper, black pepper, raisin, walnut, beef seasoning and pistachio. The absorbed irradiation doses for representative samples were controlled at 0, 1, 3, 5 and 10 kGy. PSL values for non-irradiated samples were 1 ) except beef seasoning, whereas those of irradiated samples were more than 5,000 photon counts, upper threshold (T 2 ) in black pepper, raisin, and beef seasoning and intermediates values of T 1 -T 2 in red pepper, walnut, and pistachio. Minerals separated from the samples for TL measurement showed that non-irradiated samples except pistachio (TL ratio, 0.12) were characterized by no glow curves situated at temperature range of 50 ∼ 400 .deg. C with TL ratio (0.01 ∼ 0.08), while irradiated samples except pistachio at only 1 kGy (TL ratio, 0.08) indicated glow curve at about 150 ∼ 250 .deg. C with TL ratio (0.28 ∼ 3.10). ESR measurements of irradiated samples any specific signals to irradiation. The samples of both red pepper ad pistachio were produced specific signals derived from cellulose radicals as well as single line signals for black pepper and walnut, and multiple signals derived from crystalline sugar radicals for raisin and beef seasoning. In conclusion, The ESR methods can apply for detection of pistachio exposed to electron beam but PSL and TL are not suitable methods. Furthermore, TL and ESR suggested that both techniques were more useful detection method than PSL to confirm whether red pepper, walnut and beef seasoning samples have been exposed to electron beam

  19. An AES Study of the Room Temperature Surface Conditioning of Technological Metal Surfaces by Electron Irradiation

    CERN Document Server

    Scheuerlein, C; Taborelli, M; Brown, A; Baker, M A

    2002-01-01

    The modifications to technological copper and niobium surfaces induced by 2.5 keV electron irradiation have been investigated in the context of the conditioning process occurring in particle accelerator ultra high vacuum systems. Changes in the elemental surface composition have been found using Scanning Auger Microscopy (SAM) by monitoring the carbon, oxygen and metal Auger peak intensities as a function of electron irradiation in the dose range 10-6 to 10-2 C mm-2. The surface analysis results are compared with electron dose dependent secondary electron and electron stimulated desorption yield measurements. Initially the electron irradiation causes a surface cleaning through electron stimulated desorption, in particular of hydrogen. During this period both the electron stimulated desorption and secondary electron yield decrease as a function of electron dose. When the electron dose exceeds 10-4 C mm-2 electron stimulated desorption yields are reduced by several orders of magnitude and the electron beam indu...

  20. Improvement of carbon fibre surface properties using electron beam irradiation

    International Nuclear Information System (INIS)

    Eddy Segura Pino; Luci Diva Brocardo Machado; Claudia Giovedi

    2006-01-01

    Carbon fiber-reinforced advance composites have been used for structural applications, mainly due to their mechanical properties, and additional features such as high strength-to-weight ratio, stiffness-to-weight ratio, corrosion resistance and wear properties. The main factor for a good mechanical performance of carbon fiber-reinforced composite is the interfacial interaction between the components that are fiber and polymeric matrix. The greatest challenge is to improve adhesion between components having elasticity modulus which differ by orders of magnitude and furthermore they are immiscible in each other. Another important factor is the sizing material on the carbon fiber, which protects the carbon fiber filaments and must be compatible with the matrix material in order to improve the adhesion process. The interaction of ionizing radiation from electron beam can induce in the irradiated material the formation of very active centers and free radicals. Further evolution of these active species can significantly modify structure and properties not only in the irradiated polymeric matrix but also on the fiber surface. So that, fiber and matrix play an important role in the production of chemical bonds, which promote better adhesion between both materials improving the composite mechanical performance. The aim of this work was to improve the surface properties of the carbon fiber surface using ionizing radiation from an electron beam in order to obtain improvement of the adhesion properties in the resulted composite. Commercial carbon fiber roving of high tensile strength with 12 000 filaments named 12 k, and sizing material of epoxy resin modified by ester groups was studied. EB irradiation has been carried out at the Institute for Nuclear and Energy Research (IPEN) facilities using a 1.5 MeV 37.5 kW Dynamitron electron accelerator model JOB-188. Rovings of carbon fibers with 1.78 g cm -3 density and 0.13 mm thickness were irradiated with 0.555 MeV, 6.43 mA and

  1. Identification of irradiated peppers by electron spin resonance, thermoluminescence and viscosity

    International Nuclear Information System (INIS)

    Polonia, I.; Esteves, M.P.; Andrade, M.E.; Laboratorio Nacional de Engenharia e Tecnologia Industrial, Sacavem; Empis, J.

    1995-01-01

    White and black pepper purchased in local retailers were analysed by electron spin resonance (ESR), thermoluminescence (TL) and viscosimetry (VISC) in order to establish a viable method for identifying possibly irradiated peppers. Samples studied were non irradiated or irradiated in a cobalt-60 plant with the absorbed doses of 3, 5, 7 and 10 kGy. Confirming the data found in the literature TL was revealed by our results the best method to identify irradiated peppers. Nevertheless, the dose received by the samples could not be estimated. The ESR signal of irradiated peppers is similar to the spectrum of cellulose radical but very short lived at ambient temperature. The study on the alteration of viscosity of heat-treated alkaline pepper suspensions indicate that VISC is a very promising method for detection of irradiated peppers. (Author)

  2. Vacancy defects in electron irradiated RPV steels studied by positron lifetime

    Energy Technology Data Exchange (ETDEWEB)

    Moser, P; Li, X H [CEA Centre d` Etudes de Grenoble, 38 (France). Dept. de Recherche Fondamentale sur la Matiere Condensee; Akamatsu, M; Van Duysen, J C [Electricite de France (EDF), 77 - Ecuelles (France)

    1994-12-31

    Specimens of French RPV (reactor pressure vessels) steels at different rates of segregation have been irradiated at 150 and 288 deg C with 3 MeV electrons (irradiation dose: 4*10{sup 19} e-/cm{sup 2}). Vacancy defects are studied by positron lifetime measurements before and after irradiation and at each step of isochronal annealing. After 150 deg C irradiation, a recovery step is observed in both specimens, for annealing treatments in the range 220-370 deg C and is attributed to the dissociation of vacancy-impurity complexes. The size of vacancy clusters never overcome 10 empty atomic volumes. If ``fresh`` dislocations are created just before irradiation, big vacancy clusters could be formed. After 288 deg C irradiation, small vacancy cluster of 4-10 empty atomic volumes are observed. (authors). 3 figs., 7 refs.

  3. FTIR spectroscopy of electron irradiated polymers

    International Nuclear Information System (INIS)

    Finch, D.S.

    1988-04-01

    The chemical changes in electron beam irradiated polymers, in particular PVC, are considered in order to relate the formation of conjugated structures to changes in the electrical properties. Infrared spectroscopy has been used to measure these changes. Fourier Transform techniques and computing facilities make better data processing possible. A method for base line interpretation is demonstrated whereby a shift parallel to the abscisal axis in a region of the polymer that is non absorbing is used to evaluate the baseline. This technique has proved to be highly reproducible providing that the polymer films to be examined are optically homogeneous. Evaluation of the rate of decay of the total area of the carbon chlorine region of the polymer has been compared with the chlorine decay curve analysed by the measurement of x-ray emission during irradiation of bulk samples. The significant reduction in the evolution of atomic chlorine through x-ray analysis has been attributed to the trapping of HCl within the polymer film and its subsequent slow diffusion out of the polymer. With PVC, one of the main products as a result of irradiation is the formation of conjugated sequences. These were studied by the use of uv-visible spectroscopy. (author)

  4. Aspects of space charge theory applied to dielectric under electron beam irradiation

    International Nuclear Information System (INIS)

    Oliveira, L.N. de.

    1975-01-01

    Irradiation of solid dielectric with electron beams has been used as a power full tool in investigations of charge storage and transport in such materials. Some of the results that have been obtained in this area are reviewed and the formulation of a transport equation for excess charge in irradiated insulators is dicussed. This equation is subsequently applied to various experimental set-ups. It is found that space charge effects play an essential role in the establishment of stationary currents in samples subject to quasi-penetrating electron beams. Such effects may, however, be neglected for low electron ranges. Theoretical results are in good agreement with experimental findings by Spear (1955)

  5. Dose-effect curves for electron-beam irradiation of some collection microbial strains

    International Nuclear Information System (INIS)

    Ferdes, O.; Dumitru, E.; Catargiu, L.; Ferdes, M.; Minea, R.; Oproiu, C.; Niculescu, A.

    1994-01-01

    There were electron-beam irradiated some microbial strains of B.subtilis ICA I-60 both in germination and in sporulated forms. The irradiation were performed at the IPTRD's electron accelerator at 6 MeV, and in the dose range between 0.1-5.0 kGy, at different dose-rate varying from 50 Gy/minute to 100 Gy/minute. The dosimetry was carried out by a PTW medical dosemeter. There were established the dose-effect relationships and curves, the inactivation dose (factor) and the optimum domain for electron-beam mutagenesis. There were obtained some mutant strains with 2-3.5 higher biosynthesis potential, which are in the IFC's collection. (Author)

  6. Fabrication of carbon layer coated FE-nanoparticles using an electron beam irradiation

    Science.gov (United States)

    Kim, Hyun Bin; Jeun, Joon Pyo; Kang, Phil Hyun; Oh, Seung-Hwan

    2016-01-01

    A novel synthesis of carbon encapsulated Fe nanoparticles was developed in this study. Fe chloride (III) and polyacrylonitrile (PAN) were used as precursors. The crosslinking of PAN molecules and the nucleation of Fe nanoparticles were controlled by the electron beam irradiation dose. Stabilization and carbonization processes were carried out using a vacuum furnace at 275 °C and 1000 °C, respectively. Micro structures were evaluated by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Fe nanoparticles were formed with diameters of 100 nm, and the Fe nanoparticles were encapsulated by carbon layers. As the electron beam irradiation dose increased, it was observed that the particle sizes decreased.

  7. Reduction of 1/f noise in graphene after electron-beam irradiation

    International Nuclear Information System (INIS)

    Zahid Hossain, Md.; Rumyantsev, Sergey; Shur, Michael S.; Balandin, Alexander A.

    2013-01-01

    We investigated experimentally the effect of the electron-beam irradiation on the level of the low-frequency 1/f noise in graphene devices. It was found that 1/f noise in graphene reduces with increasing concentration of defects induced by irradiation. The increased amount of structural disorder in graphene under irradiation was verified with micro-Raman spectroscopy. The bombardment of graphene devices with 20-keV electrons reduced the noise spectral density, S I /I 2 (I is the source-drain current) by an order-of magnitude at the radiation dose of 10 4 μC/cm 2 . We analyzed the observed noise reduction in the limiting cases of the mobility and carrier number fluctuation mechanisms. The obtained results are important for the proposed graphene applications in analog, mixed-signal, and radio-frequency systems, integrated circuits and sensors.

  8. Efficient continuous-wave and passively Q-switched pulse laser operations in a diffusion-bonded sapphire/Er:Yb:YAl3(BO3)4/sapphire composite crystal around 1.55 μm.

    Science.gov (United States)

    Chen, Yujin; Lin, Yanfu; Huang, Jianhua; Gong, Xinghong; Luo, Zundu; Huang, Yidong

    2018-01-08

    A composite crystal consisting of a 1.5-mm-thick Er:Yb:YAl 3 (BO 3 ) 4 crystal between two 1.2-mm-thick sapphire crystals was fabricated by the thermal diffusion bonding technique. Compared with a lone Er:Yb:YAl 3 (BO 3 ) 4 crystal measured under the identical experimental conditions, higher laser performances were demonstrated in the sapphire/Er:Yb:YAl 3 (BO 3 ) 4 /sapphire composite crystal due to the reduction of the thermal effects. End-pumped by a 976 nm laser diode in a hemispherical cavity, a 1.55 μm continuous-wave laser with a maximum output power of 1.75 W and a slope efficiency of 36% was obtained in the composite crystal when the incident pump power was 6.54 W. Passively Q-switched by a Co 2+ :MgAl 2 O 4 crystal, a 1.52 μm pulse laser with energy of 10 μJ and repetition frequency of 105 kHz was also realized in the composite crystal. Pulse width was 315 ns. The results show that the sapphire/Er:Yb:YAl 3 (BO 3 ) 4 /sapphire composite crystal is an excellent active element for 1.55 μm laser.

  9. Effects of Electron Beam Irradiated Natural Casings on the Quality Characteristics of Emulsion Sausage

    International Nuclear Information System (INIS)

    Kim, Hyunwook; Kim, Hackyoun; Hwang, Koeun; Choi, Sunmi; Kim, Cheonjei; Choi, Jihun; Choi, Yunsang; Lee, Juwoon

    2011-01-01

    The effects of electron beam irradiated hog and sheep casings (1, 3, and 8 KGy) on the physicochemical properties and shelf stability of emulsion sausage were evaluated. There were no significantly differences in ph, instrumental color, and sensory evaluation among all the samples tested (p>0.05). The cooking yields for the irradiated treated samples were larger than the yields obtained for the non-irradiated samples for both the hog and sheep casing. However, the results on the purge loss after storage for 5 weeks were contradictory. The hardness of the sausage was lower when the irradiated natural casings were used. The irradiated natural casings accelerated lipid oxidation. The volatile basic nitrogen values were lower in samples treated with electron beam irradiation. The natural casings irradiated up to a dose of 3kGy not only had different total aerobic bacteria counts during the initial storage period but also displayed higher TAB counts at the final storage period

  10. Air-void embedded GaN-based light-emitting diodes grown on laser drilling patterned sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Hao; Li, Yufeng; Wang, Shuai; Feng, Lungang; Xiong, Han; Yun, Feng, E-mail: fyun2010@mail.xjtu.edu.cn [Key Laboratory of Physical Electronics and Devices of Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics and Information Technology, Xi’an Jiaotong University, Xi’an, Shaanxi 710049 (China); Solid-State Lighting Engineering Research Center, Xi’an Jiaotong University, Xi’an, Shaanxi 710049 (China); Su, Xilin [Shaanxi Supernova Lighting Technology Co., Ltd., Xi’an, Shaanxi 710075 (China)

    2016-07-15

    Air-void structure was introduced in GaN-based blue light-emitting diodes (LED) with one-step growth on periodic laser drilling patterned sapphire substrate, which free of any photolithography or wet/dry etching process. The influence of filling factors (FF) of air-void on crystal quality and optical performance were investigate. Transmission electron microscopy images and micro-Raman spectroscopy indicated that the dislocation was bended and the partially compressed strain was released. When FF was 55.43%, compared with the LED structure grown on flat sapphire substrate, the incorporation of air-void was observed to reduce the compressed stress of ∼20% and the luminance intensity has improved by 128%. Together with the simulated reflection intensity enhancement by finite difference time-domain (FDTD) method, we attribute the enhanced optical performance to the combined contribution of strong back-side light reflection of air-void and better GaN epitaxial quality. This approach provides a simple replacement to the conventional air-void embedded LED process.

  11. Effect of electron-beam irradiation on the antioxidant activity of extracts from Citrus unshiu pomaces

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jong-Wan [Department of Food Science and Biotechnology, Kyungnam University, Masan 631-701 (Korea, Republic of); Lee, Byung Cheol [Laboratory for Quantum Optics, Korea Atomic Energy Research Institute, Daejeon 305-600 (Korea, Republic of); Lee, Jong-Hwa [School of Bioresource Sciences, Andong National University, Andong 760-749 (Korea, Republic of); Nam, Ki-Chang [Chemistry and Biotechnology Examinations Bureau, Korean Intellectual Property Office, Daejeon 302-701 (Korea, Republic of); Lee, Seung-Cheol [Department of Food Science and Biotechnology, Kyungnam University, Masan 631-701 (Korea, Republic of)], E-mail: sclee@kyungnam.ac.kr

    2008-01-15

    After electron-beam irradiation of citrus pomaces (CP), the total phenolic content (TPC), radical scavenging activity (RSA), and reducing power (RP) were evaluated. When CP were irradiated at 37.9 kGy; the TPC, RSA and RP of water extract of CP increased from 6543.2 to 7405.4 {mu}M, 37.6% to 52.9%, and 0.64 to 0.90, respectively, compared with the non-irradiated control. The results indicate that the electron-beam irradiation can be an efficient process for increasing the antioxidant activity of CP.

  12. Design of electron detection system for pulse electron irradiator

    International Nuclear Information System (INIS)

    Anjar Anggraini H; Agus Purwadi; Lely Susita RM; Bambang Siswanto; Agus Wijayanto

    2016-01-01

    Design of electron detection system for pulse electron irradiator has been conducted on the Plasma Cathode Electron Source by Rogowski coil technique. Rogowski coil has ability to capture the induced magnetic field of the electric current, subsequent induced magnetic field will provide voltage after passing integrator. This diagnostic used combination of copper wire, ferrite and RC integrator. The design depends on the pulse width and the value of plasma current that passes through the coil, thus the number of windings, coil area and integrator can be designed. For plasma spots current of IDPS expected to be 10 A and pulse width 10 μs the Rogowski coil using MnZn ferrite with inductance L = 0.275 mH and permeability μr = 200 H/m. For the current of plasma arc ADPS expected to be 100 A and pulse width 100 μs by using inductance L=1.9634 mH and permeability μr = 6256 H/m. Electron current in extraction system expected to be 30 A and pulse width 100 μs the Rogowski coil using inductance L=51.749 mH and permeability μr= 4987 H/m. Design integrator used is the type of RC integrator. (author)

  13. Influence of high-energy electron irradiation on field emission properties of multi-walled carbon nanotubes (MWCNTs) films

    Energy Technology Data Exchange (ETDEWEB)

    Patil, Sandip S. [Center for Advanced Studies in Material Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Koinkar, Pankaj M. [Center for International Cooperation in Engineering Education (CICEE), University of Tokushima, 2-1 Minami-Josanjima-Cho, Tokushima 770-8506 (Japan); Dhole, Sanjay D. [Center for Advanced Studies in Material Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); More, Mahendra A., E-mail: mam@physics.unipune.ac.i [Center for Advanced Studies in Material Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Murakami, Ri-ichi, E-mail: murakami@me.tokushima-u.ac.j [Department of Mechanical Engineering, University of Tokushima, 2-1 Minami-Josanjima-Cho, Tokushima 770-8506 (Japan)

    2011-04-15

    The effect of very high energy electron beam irradiation on the field emission characteristics of multi-walled carbon nanotubes (MWCNTs) has been investigated. The MWCNTs films deposited on silicon (Si) substrates were irradiated with 6 MeV electron beam at different fluence of 1x10{sup 15}, 2x10{sup 15} and 3x10{sup 15} electrons/cm{sup 2}. The irradiated films were characterized using scanning electron microscope (SEM) and micro-Raman spectrometer. The SEM analysis clearly revealed a change in surface morphology of the films upon irradiation. The Raman spectra of the irradiated films show structural damage caused by the interaction of high-energy electrons. The field emission studies were carried out in a planar diode configuration at the base pressure of {approx}1x10{sup -8} mbar. The values of the threshold field, required to draw an emission current density of {approx}1 {mu}A/cm{sup 2}, are found to be {approx}0.52, 1.9, 1.3 and 0.8 V/{mu}m for untreated, irradiated with fluence of 1x10{sup 15}, 2x10{sup 15} and 3x10{sup 15} electrons/cm{sup 2}. The irradiated films exhibit better emission current stability as compared to the untreated film. The improved field emission properties of the irradiated films have been attributed to the structural damage as revealed from the Raman studies.

  14. Amorphization of Zr3Al by hydrogenation and subsequent electron irradiation

    International Nuclear Information System (INIS)

    Meng, W.J.; Koike, J.; Okamoto, P.R.; Rehn, L.E.

    1988-12-01

    1-MeV electron irradiation of hydrogenated Zr 3 Al (Zr 3 AlH/sub 0.96/) at 10K is studied. A more than 20 fold reduction in the critical dose required for complete amorphization is observed for the hydrogenated specimen as compared to the un-hydrogenated Zr 3 Al under identical irradiation conditions. 11 refs., 4 figs

  15. An improved approach to identify irradiated spices using electronic nose, FTIR, and EPR spectroscopy.

    Science.gov (United States)

    Sanyal, Bhaskar; Ahn, Jae-Jun; Maeng, Jeong-Hwan; Kyung, Hyun-Kyu; Lim, Ha-Kyeong; Sharma, Arun; Kwon, Joong-Ho

    2014-09-01

    Changes in cumin and chili powder from India resulting from electron-beam irradiation were investigated using 3 analytical methods: electronic nose (E-nose), Fourier transform infrared (FTIR) spectroscopy, and electron paramagnetic resonance (EPR) spectroscopy. The spices had been exposed to 6 to 14 kGy doses recommended for microbial decontamination. E-nose measured a clear difference in flavor patterns of the irradiated spices in comparison with the nonirradiated samples. Principal component analysis further showed a dose-dependent variation. FTIR spectra of the samples showed strong absorption bands at 3425, 3007 to 2854, and 1746 cm(-1). However, both nonirradiated and irradiated spice samples had comparable patterns without any noteworthy changes in functional groups. EPR spectroscopy of the irradiated samples showed a radiation-specific triplet signal at g = 2.006 with a hyper-fine coupling constant of 3 mT confirming the results obtained with the E-nose technique. Thus, E-nose was found to be a potential tool to identify irradiated spices. © 2014 Institute of Food Technologists®

  16. Treatment of toxic gases SO2 and NO X by electron beam irradiation

    International Nuclear Information System (INIS)

    Castro Rubio Poli, D. de; Vieira, J.M.; Campos, C.A. de.

    1993-01-01

    The removal of S O 2 and N O x by electron beam irradiation will be studied using a small scale flow system which is being set up in order to obtain basic data for the process technical and economical feasibility concerning industrial applications. The gas irradiation will be performed using a Electron Beam Accelerator with 1,5 MeV power, 25 m A current from Radiation Dynamics, Inc. USA. (author)

  17. Investigation of instability of M23C6 particles in F82H steel under electron and ion irradiation conditions

    Science.gov (United States)

    Kano, Sho; Yang, Huilong; Shen, Jingjie; Zhao, Zishou; McGrady, John; Hamaguchi, Dai; Ando, Mamami; Tanigawa, Hiroyasu; Abe, Hiroaki

    2018-04-01

    In order to clarify the instability of M23C6 in F82H steel under irradiation, both electron irradiation using a high voltage electron microscope (HVEM) and ion irradiation using an ion accelerator were performed. For the electron irradiation, in-situ observation under 2 MV electron irradiation and ex-situ high resolution electron microscopic (HREM) analysis were utilized to evaluate the response of M23C6 against irradiation. The temperature dependence of the irradiation induced instability of the carbide was first confirmed: 293 K indicating severe loss of crystallinity due to dissolution of the constituent atoms though irradiation-enhanced diffusion under the vacancy diffusion by the focused electron beam irradiation. For the ion irradiation, 10.5 MeV-Fe3+ ion was applied to bombard the F82H steel at 673 K to achieve the displacement damage of ≈20 dpa at the depth of 1.0 μm from surface. Cross-section TEM specimens were prepared by a focused ion beam technique. The shrinkage of carbide particles was observed especially near the irradiation surface. Besides, the lattice fringes at the periphery of carbide were observed in the irradiated M23C6 by the HREM analysis, which is different from that observed in the electron irradiation. It was clarified that the instability of M23C6 is dependent on the irradiation conditions, indicating that the flow rate of vacancy type defects might be the key factor to cause the dissolution of constituent atoms of carbide particles into matrix under irradiation.

  18. (211) oriented ZnTe growth on m-plane sapphire by MBE

    Energy Technology Data Exchange (ETDEWEB)

    Nakasu, Taizo [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, 2-8-26, Tokyo 169-0051 (Japan); Togo, Hiroyoshi [NTT Microsystem Integration Laboratories, Atugi-shi 243-0198 (Japan); Asahi, Toshiaki [Technology Development Center, JX Nippon Mining and Metals Corporation, Hitachi-shi 317-0056 (Japan)

    2013-11-15

    Single-crystalline and single domain ZnTe thin films are sought for high-performance terahertz wave detectors, and ZnTe/sapphire heterostructures were considered since the Electro-Optical (EO) effect could be obtained only from epilayers. ZnTe epilayers were grown on m-plane sapphire substrates by molecular beam epitaxy, and the potential of single domain epilayers was explored. Through the X-ray diffraction pole figure measurement it was confirmed that one (100) oriented ZnTe domain along with two kinds of (211) oriented domains were formed on the m-plane sapphire when the layer was grown at 340 C. When the layer was grown at 350 C, the (211) oriented domain dominated the film. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Defect creation rates in CdTe irradiated by electrons

    International Nuclear Information System (INIS)

    Caillot, M.

    1978-01-01

    Up to now, the defect creation rates in CdTe irradiated by electrons were unknown. They have been calculated for different electron kinetic energies. As the samples studied are thick, the energy loss when the electrons penetrate the material has been taken into account. The cross-sections of Cd and Te displacements vs the depth of electron penetration were determined for different electron kinetic energies, and the defect creation rates obtained for each sublattice. These creation rates have been compared with those deduced from experiments and it was found that the experimental creation rates were lower than the calculated ones. This discrepancy can be explained in terms of creation of neutral Frenkel pairs. (Auth.)

  20. A structure development in electron-irradiated type Ia diamond

    International Nuclear Information System (INIS)

    Novikov, N.V.; Ositinskaya, T.D.; Tkach, V.N.

    1998-01-01

    A type Ia diamond crystal with nitrogen impurity in different forms was irradiated by 3.5 MeV electrons with increasing doses 5 centre dot 10 16 , 2 centre dot 10 17 , 4 centre dot 10 17 , 2 centre dot 10 18 e/cm 2 and investigated before and after each dose by positron annihilation, EPR, and optical spectroscopy. After irradiation with the highest dose, the effect of development of a visible defective structure of the crystal is revealed. A description of this effect and data of EPR and IR-measurements depending on irradiation doses are presented. First results of cathodoluminescence (CL) studies in the form CL-topograms and CL-spectra for difference zones of the crystal are also given

  1. Structural and functional changes in the intenstine of irradiated and hypothermic irradiated rats : a scanning and transmission electron microscopic study

    International Nuclear Information System (INIS)

    Chaudhuri, S.; Chaudhuri, Swapna; Roy, Bijon

    1982-01-01

    Severe destructive changes in the intestine of rats following whole body exposure to gamma rays (832 rads) were observed by light microscope, scanning and transmission electron microscope studies. Hypothermia (15deg C rectal temperature) induced prior to irradiation protected the intestinal mucosa from destruction. A simultaneous study showed that glucose absorption decreased significantly in irradiated rats, whereas it was increased in hypothermic irradiated animals. (author)

  2. Sea level characterization of a 1100 g sapphire bolometer

    CERN Document Server

    Pécourt, S; Bobin, C; Coron, N; Jesus, M D; Hadjout, J P; Leblanc, J W; Marcillac, P D

    1999-01-01

    A first characterization of a 1100 g sapphire bolometer, performed at sea level and at a working temperature of 40 mK, is presented. Despite perturbations coming from the high-radioactive background and cosmic rays, calibration spectra could be achieved with an internal alpha source and a sup 5 sup 7 Co gamma-ray source: the experimental threshold is 25 keV, while the FWHM resolution is 17.4 keV for the 122 keV peak. Possible heat release effects are discussed, and a new limit of 9x10 sup - sup 1 sup 4 W/g is obtained for sapphire.

  3. An electron beam irradiation method for modification of surface electrical resistivity of polyamides

    International Nuclear Information System (INIS)

    Brasoveanu, M. M.; Timus, D.; Nemtanu, M. R.

    2002-01-01

    The synthetic textiles which have mechanical and processing properties and a low price are very useful and consequently in high demand. The low antistatic qualities are an important disadvantage, but not impossible to eliminate. The aim of paper is the study of modification the antistatic properties of polyamide by grafting of monomers by irradiation. Twisted and unthermofixed polyamide-6 fibre from CFS Savinesti were investigated. The samples of polyamide were irradiated with an electron beam from the ALIN-7 linear accelerator of Electron Accelerators Laboratory of National Institute for Lasers, Plasma and Radiation Physics, Bucharest. Immediately after irradiation, the samples were measured by electron spin resonance (ESR). ESR spectra were recorded at room temperature using a Jeol spectrometer, JES-ME-3X, with 100 kHz modulation. In polyamide-6 at least two irradiation defect types occurred which present EPR signal by electron beam irradiation. Unstable centres of type A presenting an incompletely resolved hyperfine structure can be attributed to radicals -N-CH 2 - or -NH-CH-CH 2 -. Both radicals can present at room temperature a five-line spectrum like the radical formed in this work. First radical appears with very low probability and if the free bond is at one of carbon atoms then it will be stabilized immediately in a position from nitrogen. These type A radicals can appear in same zone and then they can react and form unsaturated bonds or bridge between the polymeric chains. Thus, it will appear the type B defects which were more stabile and without structure. On these double chains one can graft vinylic monomers even after time intervals longer from irradiation. (authors)

  4. Origin of the main deep electron trap in electron irradiated InP

    International Nuclear Information System (INIS)

    Sibille, A.

    1986-01-01

    The electrical activity and annealing behavior of the main electron trap in electron irradiated InP p + n junctions has been investigated. A very marked depth dependence of the annealing rate has been found. Moreover, this center apparently acts as if it were a deep donor, leading to an increase of carrier concentration on the n side. All these results are coherently interpreted with a model in terms of radiation defect D(P) (phosphorus interstitial or vacancy), residual shallow acceptor complexing, the final annealing resulting from a dissociation of the complex followed by a diffusion and either recapture or annihilation of D(P)

  5. Effects of electron beam irradiation on the structural properties of polylactic acid/polyethylene blends

    Energy Technology Data Exchange (ETDEWEB)

    Bee, Soo-Tueen, E-mail: direct.beest@gmail.com [Department of Chemical Engineering, Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, Jalan Genting Kelang, 53300 Setapak, Kuala Lumpur (Malaysia); Ratnam, C.T. [Radiation Processing Technology Division, Malaysian Nuclear Agency, Bangi, 43000 Kajang, Selangor (Malaysia); Sin, Lee Tin, E-mail: direct.tinsin@gmail.com [Department of Chemical Engineering, Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, Jalan Genting Kelang, 53300 Setapak, Kuala Lumpur (Malaysia); Tee, Tiam-Ting; Wong, Wai-Kien; Lee, Jiuun-Xiang [Department of Chemical Engineering, Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, Jalan Genting Kelang, 53300 Setapak, Kuala Lumpur (Malaysia); Rahmat, A.R. [Department of Polymer Engineering, Faculty of Chemical Engineering, Universiti Teknologi Malaysia, 81310 UTM Skudai, Johor (Malaysia)

    2014-09-01

    Highlights: •Electron beam irradiation on polyethylene (LDPE) and polylactic acid (PLA) blends. •Irradiated PLA/LDPE blends exhibit structural rearrangement to highly ordered structure. •Irradiated PLA/LDPE matrix extends continuity of polymer matrix with larger fibrils diameter. -- Abstract: The purpose of this research was to investigate the effects of electron beam irradiation on the properties of polylactic acid (PLA) and low density polyethylene (LDPE) blends. The PLA were compounded with 20–80% LDPE and were exposed to electron beam irradiation dosages of 20–120 kGy. The results from gel content and X-ray diffraction analyses showed that the addition of LDPE to PLA effectively increased the gel content and crystallinity. However, an increasing percentage of LDPE reduced the tensile strength and Young’s modulus of the PLA/LDPE samples due to the lower intermolecular bonding of LDPE than of PLA. Moreover, an increase in irradiation dosages gradually decreased the mechanical properties of low-LDPE PLA/LDPE. In contrast, the increasing irradiation dosage enhanced the mechanical properties of higher-LDPE PLA/LDPE. These results indicate that higher amounts of LDPE effectively react with the release of free radicals within the amorphous phase if the blends are subjected to irradiation. The higher amounts of free radicals induce the formation of three-dimensional cross-linked networks in the polymer matrix and thus increase the gel content. The irradiation-induced cross-linking in PLA/LDPE samples improves the mechanical properties and crystallinity by promoting a structural rearrangement of the polymer matrix into a highly ordered structure.

  6. Effects of electron beam irradiation on the structural properties of polylactic acid/polyethylene blends

    International Nuclear Information System (INIS)

    Bee, Soo-Tueen; Ratnam, C.T.; Sin, Lee Tin; Tee, Tiam-Ting; Wong, Wai-Kien; Lee, Jiuun-Xiang; Rahmat, A.R.

    2014-01-01

    Highlights: •Electron beam irradiation on polyethylene (LDPE) and polylactic acid (PLA) blends. •Irradiated PLA/LDPE blends exhibit structural rearrangement to highly ordered structure. •Irradiated PLA/LDPE matrix extends continuity of polymer matrix with larger fibrils diameter. -- Abstract: The purpose of this research was to investigate the effects of electron beam irradiation on the properties of polylactic acid (PLA) and low density polyethylene (LDPE) blends. The PLA were compounded with 20–80% LDPE and were exposed to electron beam irradiation dosages of 20–120 kGy. The results from gel content and X-ray diffraction analyses showed that the addition of LDPE to PLA effectively increased the gel content and crystallinity. However, an increasing percentage of LDPE reduced the tensile strength and Young’s modulus of the PLA/LDPE samples due to the lower intermolecular bonding of LDPE than of PLA. Moreover, an increase in irradiation dosages gradually decreased the mechanical properties of low-LDPE PLA/LDPE. In contrast, the increasing irradiation dosage enhanced the mechanical properties of higher-LDPE PLA/LDPE. These results indicate that higher amounts of LDPE effectively react with the release of free radicals within the amorphous phase if the blends are subjected to irradiation. The higher amounts of free radicals induce the formation of three-dimensional cross-linked networks in the polymer matrix and thus increase the gel content. The irradiation-induced cross-linking in PLA/LDPE samples improves the mechanical properties and crystallinity by promoting a structural rearrangement of the polymer matrix into a highly ordered structure

  7. Study on application of the physical detection methods for electron beam-irradiated agricultural products

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Dong Yong; Park, Yong Dae; Jin, Chang Hyun; Choi, Dae Seong; Jeong, Il Yun [Korea Atomic Energy Research Institute, Jeongeup (Korea, Republic of); Yook, Hong Sun [Chungnam National University, Daejeon (Korea, Republic of)

    2010-09-15

    Physical detection methods, photostimulated luminescence (PSL), thermoluminescence (TL) and electron spin resonance (ESR) were applied to detect electron beam-irradiated agricultural products, such as red pepper, black pepper, raisin, walnut, beef seasoning and pistachio. The absorbed irradiation doses for representative samples were controlled at 0, 1, 3, 5 and 10 kGy. PSL values for non-irradiated samples were <700 counts/60s (lower threshold, T{sub 1}) except beef seasoning, whereas those of irradiated samples were more than 5,000 photon counts, upper threshold (T{sub 2}) in black pepper, raisin, and beef seasoning and intermediates values of T{sub 1}-T{sub 2} in red pepper, walnut, and pistachio. Minerals separated from the samples for TL measurement showed that non-irradiated samples except pistachio (TL ratio, 0.12) were characterized by no glow curves situated at temperature range of 50 {approx} 400 .deg. C with TL ratio (0.01 {approx} 0.08), while irradiated samples except pistachio at only 1 kGy (TL ratio, 0.08) indicated glow curve at about 150 {approx} 250 .deg. C with TL ratio (0.28 {approx} 3.10). ESR measurements of irradiated samples any specific signals to irradiation. The samples of both red pepper ad pistachio were produced specific signals derived from cellulose radicals as well as single line signals for black pepper and walnut, and multiple signals derived from crystalline sugar radicals for raisin and beef seasoning. In conclusion, The ESR methods can apply for detection of pistachio exposed to electron beam but PSL and TL are not suitable methods. Furthermore, TL and ESR suggested that both techniques were more useful detection method than PSL to confirm whether red pepper, walnut and beef seasoning samples have been exposed to electron beam.

  8. Segregation of a copper-nickel alloy after electron irradiation

    International Nuclear Information System (INIS)

    Wagner, W.

    1979-09-01

    In the present work measurement of diffuse neutron scattering are used to determine short range segregation effects of the alloy Cu 0 sub(.) 414 Ni 0 sub(.) 586 after thermal annealing and 3 MeV electron irradiation in the temperature range between 370 K and 600 K. In addition neutron small angle scattering measurement are performed after irradiation to study possible long range segregation effects. Residual resistivity measurements are performed in parallel in order tp orientate the relatively expensive neutron scattering measurements with respect to the residual changes (orig./KBI) [de

  9. Electron beam irradiation induces abnormal development and the stabilization of p53 protein of American serpentine leafminer, Liriomyza trifolii (Burgess)

    Energy Technology Data Exchange (ETDEWEB)

    Koo, Hyun-Na; Yun, Seung-Hwan; Yoon, Changmann [Department of Plant Medicine, College of Agriculture, Life and Environment Sciences, Chungbuk National University, Cheongju 361-763 (Korea, Republic of); Kim, Gil-Hah, E-mail: khkim@chungbuk.ac.kr [Department of Plant Medicine, College of Agriculture, Life and Environment Sciences, Chungbuk National University, Cheongju 361-763 (Korea, Republic of)

    2012-01-15

    The American serpentine leafminer fly, Liriomyza trifolii (Burgess), is one of the most destructive polyphagous pests worldwide. In this study, we determined electron beam doses for inhibition of normal development of the leaf miner and investigated the effect of electron beam irradiation on DNA damage and p53 stability. Eggs (0-24 h old), larvae (2nd instar), puparia (0-24 h old after pupariation) and adults (24 h after emergence) were irradiated with increasing doses of electron beam irradiation (six levels between 30 and 200 Gy). At 150 Gy, the number of adults that developed from irradiated eggs, larvae and puparia was lower than in the untreated control. Fecundity and egg hatchability decreased depending on the doses applied. Reciprocal crosses between irradiated and unirradiated flies demonstrated that males were more radiotolerant than females. Adult longevity was not affected in all stages. The levels of DNA damage in L. trifolii adults were evaluated using the alkaline comet assay. Our results indicate that electron beam irradiation increased levels of DNA damage in a dose-dependent manner. Moreover, low doses of electron beam irradiation led to the rapid appearance of p53 protein within 6 h; however, it decreased after exposure to high doses (150 Gy and 200 Gy). These results suggest that electron beam irradiation induced not only abnormal development and reproduction but also p53 stability caused by DNA damage in L. trifolii. We conclude that a minimum dose of 150 Gy should be sufficient for female sterilization of L. trifolii. - Highlights: > Electron beam irradiation inhibited normal development of the leaf miner. > Electron beam irradiation inhibited normal reproduction of the leaf miner. > Electron beam irradiation increased levels of DNA damage. > Electron beam irradiation induced p53 stability.

  10. Direct nanopatterning of polymer/silver nanoblocks under low energy electron beam irradiation.

    Science.gov (United States)

    El Mel, Abdel-Aziz; Stephant, Nicolas; Gautier, Romain

    2016-10-06

    In this communication, we report on the growth, direct writing and nanopatterning of polymer/silver nanoblocks under low energy electron beam irradiation using a scanning electron microscope. The nanoblocks are produced by placing a droplet of an ethylene glycol solution containing silver nitrate and polyvinylpyrrolidone diluted in ethanol directly on a hot substrate heated up to 150 °C. Upon complete evaporation of the droplet, nanospheres, nano- and micro-triangles and nanoblocks made of silver-containing polymers, form over the substrate surface. Considering the nanoblocks as a model system, we demonstrate that such nanostructures are extremely sensitive to the e-beam extracted from the source of a scanning electron microscope operating at low acceleration voltages (between 5 and 7 kV). This sensitivity allows us to efficiently create various nanopatterns (e.g. arrays of holes, oblique slits and nanotrenches) in the material under e-beam irradiation. In addition to the possibility of writing, the nanoblocks revealed a self-healing ability allowing them to recover a relatively smooth surface after etching. Thanks to these properties, such nanomaterials can be used as a support for data writing and erasing on the nanoscale under low energy electron beam irradiation.

  11. Evaluation of induced radioactivity in 10 MeV-Electron irradiated spices, (2)

    International Nuclear Information System (INIS)

    Katayama, Tadashi; Furuta, Masakazu; Shibata, Setsuko; Matsunami, Tadao; Ito, Norio; Mizohata, Akira; Toratani, Hirokazu; Takeda, Atsuhiko.

    1994-01-01

    In order to check radioactivity of beta-emmitters produced by (γ, n) reactions which could occur at energies up to 10 MeV, black pepper, white pepper, red pepper, ginger and turmeric were irradiated with 10 MeV electron from a linear accelerator to a dose of 100 kGy. Beta-rays were counted using a 2π gas flow counter and a liquid scintillation counter. Any induced radioactivity could not be detected in irradiated samples. When inorganic compounds containing the nuclides in the list were artificially added in the samples and were irradiated, the β-activities were detected. From the amount of observed radioactivities of β-emmitters produced in the compounds as photonuclear products, it is concluded that the induced radioactivity in natural samples by 10 MeV-electron irradiation were far smaller than natural radioactivity from 40 K contained in the samples and, hence, its biological effects should be negligible. (author)

  12. Effect of electron-excitation on radiation damage in ion-irradiated FCC metals

    International Nuclear Information System (INIS)

    Iwase, Akihiro

    1989-06-01

    FCC metals (Al, Cu, Ag, Ni) were irradiated with 0.5-1.8 MeV H, He, N and Ar ions, and 84-126 MeV C, F, Si, Cl, Br and I ions at liquid helium temperatures. After the irradiations, thermal annealing experiments were performed up to 300 K. Anomalous reduction of Stage-I recovery was observed in Al and Ni irradiated with high-energy (∼100 MeV) heavy ions. Radiation annealing by 100 MeV I ions was studied in predoped Ni and Cu. The experimental results were analyzed by using a new model which describes the production and radiation annealing of two or more types of defects. The extraordinarily large cross sections for subthreshold recombination of Stage-I defects were obtained in Ni. These results show that in Al and Ni, the energies transferred from the excited electrons to lattice through the electron-lattice interaction contribute to the annihilations of defects during irradiation. (author)

  13. Effect of impurities on the growth of {113} interstitial clusters in silicon under electron irradiation

    Science.gov (United States)

    Nakai, K.; Hamada, K.; Satoh, Y.; Yoshiie, T.

    2011-01-01

    The growth and shrinkage of interstitial clusters on {113} planes were investigated in electron irradiated Czochralski grown silicon (Cz-Si), floating-zone silicon (Fz-Si), and impurity-doped Fz-Si (HT-Fz-Si) using a high voltage electron microscope. In Fz-Si, {113} interstitial clusters were formed only near the beam incident surface after a long incubation period, and shrank on subsequent irradiation from the backside of the specimen. In Cz-Si and HT-Fz-Si, {113} interstitial clusters nucleated uniformly throughout the specimen without incubation, and began to shrink under prolonged irradiation at higher electron beam intensity. At lower beam intensity, however, the {113} interstitial cluster grew stably. These results demonstrate that the {113} interstitial cluster cannot grow without a continuous supply of impurities during electron irradiation. Detailed kinetics of {113} interstitial cluster growth and shrinkage in silicon, including the effects of impurities, are proposed. Then, experimental results are analyzed using rate equations based on these kinetics.

  14. Craniospinal axis irradiation: an improved electron technique for irradiation of the spinal axis

    International Nuclear Information System (INIS)

    Chun Li; Vijayakumar, S.; Myrianthopoulos, L.C.; Kuchnir, F.T.; Muller-Runkel, R.

    1994-01-01

    The authors review dosimetric features of craniospinal axis irradiation in the areas of matching cranial and spinal fields, with reference to normal structures within the spinal field. The implications of the use of photon or electron modalities for the spinal port were evaluated. A novel method of matching the cranial photon and the spinal electron fields involving a computer-aided junction design is presented, involving moving the photon beam in three steps to degrade its penumbra to match that of the electron field. Thermoluminescent dosimetry in a Rando phantom and computed tomography-based dose-volume histogram study for an illustrative paediatric case were used to compare dose to normal structures within the spinal field. Results show that the use of electrons for the spinal field leads to better sparing of deep seated normal structures. For bone marrow, the use of a customized bolus for the spinal field results in an improved dose distribution, making electrons potentially superior to photons for radiobiological reasons. (author)

  15. Radiosensitivity of chlorella after medium energy accelerated electron irradiation; Radiosensibilite des chlorelles aux electrons acceleres de moyenne energie

    Energy Technology Data Exchange (ETDEWEB)

    Roux, J C [commissariat a L' Energie Atomique, Grenoble (France). Centre d' Etudes Nucleaires

    1966-06-01

    The survival curves (capability of multiplication) of chlorella pyrenoidosa after irradiations can be used for soft electrons (0.65 and 1 MeV), hence penetrating into only 2 to 4 millimeters of water: the algae are laying on porous membranes and the doses are calculated from the power of the electron beam measured by the electric current on a metallic target or by Fricke's dosimetry. With these techniques, it is showed and discussed the part of anoxia in the radioprotection (magnitude or reduction of the dose calculated from the slope of survival curves: 2.5 ) that is more important than the restoration studied by the fractionation of the dose. The 0.65 and 1 MeV electrons have a biologic effect lesser than 180 keV X-rays (RBE - relative biological efficiency - calculated on the slope of survival curves is 0.92 in aerated irradiation, 0.56 in the deoxygenated irradiation). (author) [French] Les courbes de survie clonale (capacite de multiplication) de chlorella pyrenoidosa apres irradiation sont realisables meme avec des electrons peu energetiques (0.65 et 1 MeV), donc peu penetrants, par l'irradiation d'algues deposees sur membrane filtrante et grace au calcul de la dose a partir de l'energie du faisceau mesure par le courant que celui-ci cree dans une cible metallique ou par dosimetrie de Fricke. Par ces techniques, on a montre et discute le role de l'anoxie dans la radioprotection des chlorelles (facteur de reduction de la dose calcule sur la pente des courbes de survie de 2.5) qui est plus important que le pouvoir de restauration etudie par le fractionnement de la dose. Les electrons utilises ont un effet biologique moins grand que les rayons X de 180 keV (l'efficacite biologique relative - EBR - calculee sur la pente des courbes de survie est de 0.9 en presence d'air, 0.6 en presence d'azote)

  16. Electron beam irradiation effects on xanthan gum. Rheological aspects

    International Nuclear Information System (INIS)

    Vieira, F.F.; Del Mastro, N.L.

    2001-01-01

    The paper describes the application of electron beam irradiation to xanthum gum as used as ingredient by the food or cosmetics industry in order to establish their radiosensitivity. The edible powder of xanthum gum samples were irradiated in 1mm thick layers of Petri dishes covered by a transparent PVC of films using an EB accelerator Dynamitron (Radiation Dynamics Inc.) model JOB 188, dose rate 11.17 kGy/s, 0.637 MeV, 1.78 mA, 5 kGy per passage, 3.36 m min -1 with doses of 5, 10, 20 and 50kGy. One % aqueous solutions from irradiated and non-irradiated xanthum gum were prepared and the radiation effects were measured following viscosity changes at 25 deg. C using a Brookfield viscometer; model DVIII, spindel L, with Rheocalc software. Viscosity measurements were performed according to our previous experience and the results are the mean of at least 3 experiments

  17. Dual ion beam irradiation system for in situ observation with electron microscope

    International Nuclear Information System (INIS)

    Tsukamoto, Tetuo; Hojou, Kiiti; Furuno, Sigemi; Otsu, Hitosi; Izui, Kazuhiko.

    1993-01-01

    We have developed a new in situ observation system for dynamic processes under dual ion beam irradiation. The system consists of a modified 400 keV analytical electron microscope (JEOL, JEM-4000FX) and two 40 kV ion beam accelerators. This system allows evaluation of microscopic changes of structure and chemical bonding state of materials in the dynamic processes under two kinds of ion beam irradiations, that is required for the simulation test of the first wall of nuclear fusion reactors onto which He + , H + , and H 2 + ions are irradiated simultaneously. These two ion accelerators were equipped symmetrically both sides of the electron microscope and individually controlled. Each ion beam extracted from a duo-plasmatron ion gun is bent downward by an angle of 30deg with a mass-separating magnet, and introduced into specimen chamber of the electron microscope. Inside the specimen chamber the beam is deflected again by an angle of 30deg with an electrostatic prism so as to be incident on the specimen surface. Finally, two ion beams from both side are incident on the specimen surface at an angle of 60deg. The maximum ion current density of helium is more than 250μA/cm 2 at the specimen at an ion energy of 17 keV. Images of the electron microscope during dual ion beam irradiation are observed through a TV camera and recorded with a VTR. (author)

  18. Electron-irradiation induced changes in the phases and photocatalytic activity of TiO{sub 2} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Sapnar, K.B.; Dhole, S.D. [Department of Physics, University of Pune, Pune 411007 (India); Bhoraskar, V.N., E-mail: vnb@physics.unipune.ac.in [Department of Physics, University of Pune, Pune 411007 (India)

    2012-04-01

    Highlights: Black-Right-Pointing-Pointer The phases of TiO{sub 2} nanoparticles have been changed by electron irradiation. Black-Right-Pointing-Pointer The photocatalytic activity of TiO{sub 2} gets enhanced after electron irradiation. Black-Right-Pointing-Pointer The brookite phase has appeared in TiO{sub 2} after electron irradiation. - Abstract: Samples of TiO{sub 2} nanoparticles, with mixed anatase and rutile phases, were irradiated with 6.5 MeV electrons at fluences, 1.5, 2.0, 2.5, 3.0, and 3.5 Multiplication-Sign 10{sup 15} e cm{sup -2} and characterized by several methods. With increasing electron fluence, a continuous decrease in the average particle size from {approx}80 nm to around 30 nm were observed along with a decrease in the rutile and the anatase phases of TiO{sub 2}, but at different rates, and growth of the TiO{sub 2} brookite phase at slow rate. The photocatalytic activities of different electron irradiated TiO{sub 2} samples, in the photodegradation of methylene blue, were studied by recording UV-Vis absorption spectra of the respective solutions. On electron irradiation, even though the rutile phase in the TiO{sub 2} was decreasing, the photocatalytic activity of the nanoparticles increased continuously with fluence up to {approx}3.0 Multiplication-Sign 10{sup 15} e cm{sup -2}, but decreased at 3.5 Multiplication-Sign 10{sup 15} e cm{sup -2}. The energy levels introduced by the brookite phase and the electron induced defects in TiO{sub 2} could have effectively reduced the electron-hole recombination rate in the absence of the rutile phase. The observed enhancement in the photocatalytic activity of the irradiated TiO{sub 2} is attributed to the formation of small size particles, the introduction of the oxygen related vacancies and other defects, the growth of the brookite phase, and increased absorption of radiation over the ultraviolet and visible range.

  19. Effects of electron beam irradiation on tribological and physico-chemical properties of Polyoxymethylene copolymer (POM-C)

    Energy Technology Data Exchange (ETDEWEB)

    Rahman, Md. Shahinur; Shaislamov, Ulugbek; Yang, Jong-Keun [Nuclear Fusion and Plasma Applications Laboratory, Department of Nuclear and Energy Engineering, Jeju National University, 102 Jejudaehak-ro, Jeju-si, Jeju 63243 (Korea, Republic of); Kim, Jong-Kuk [Plasma Processing Laboratory, Division of Surface Technology, Korea Institute of Materials Science, 797 Changwondaero, Sungsan-Gu, Changwon, Kyungnam 641-010 (Korea, Republic of); Yu, Young Hun [Department of Physics, Jeju National University, 102 Jejudaehak-ro, Jeju-si, Jeju 63243 (Korea, Republic of); Choi, Sooseok [Nuclear Fusion and Plasma Applications Laboratory, Department of Nuclear and Energy Engineering, Jeju National University, 102 Jejudaehak-ro, Jeju-si, Jeju 63243 (Korea, Republic of); Lee, Heon-Ju, E-mail: hjlee@jejunu.ac.kr [Nuclear Fusion and Plasma Applications Laboratory, Department of Nuclear and Energy Engineering, Jeju National University, 102 Jejudaehak-ro, Jeju-si, Jeju 63243 (Korea, Republic of)

    2016-11-15

    Highlights: • Electron beam dose irradiation effect on tribology of POM-C was investigated. • Raman and FTIR-ATR spectra confirm the chemical structural modification. • 1 MeV, 100 kGy dose irradiation induced well suited carbonization and hydrophobicity. • Well suited carbonization and hydrophobicity reduced friction coefficient. - Abstract: Polyoxymethylene copolymer (POM-C) is an attractive and widely used engineering thermoplastic across many industrial sectors owing to outstanding physical, mechanical, self-lubricating and chemical properties. In this research work, the POM-C blocks were irradiated with 1 MeV electron beam energy in five doses (100, 200, 300, 500 and 700 kGy) in vacuum condition at room temperature. The tribological and physico-chemical properties of electron beam irradiated POM-C blocks have been analyzed using pin on disk tribometer, Raman spectroscopy, FTIR-ATR, gel content analysis, SEM-EDS (scanning electron microscopy-energy dispersive spectroscopy), surface profiler and contact angle analyzer. Electron beam irradiation at a dose of 100 kGy resulted in decrease of the friction coefficient of POM-C block due to well suited carbonization, cross-linking, free radicals formation and partial physical modification. It also showed the lowest surface roughness and highest water contact angle among all unirradiated and irradiated POM-C blocks. The irradiation dose at 200 kGy resulted in increase of friction coefficient due to less effective cross-linking, but the irradiation doses at 300, 500 and 700 kGy resulted in increase of the friction coefficient as compared to unirradiated POM-C block due to severe chain scission, chemical and physical structural degradation. The degree of improvement for tribological attribute relies on the electron beam surface dose delivered (energy and dose rate).

  20. Contribution of Brazil nut shell fiber and electron-beam irradiation in thermomechanical properties of HDPE

    International Nuclear Information System (INIS)

    Polato, Pamella; Lorusso, Leandro Alex; Souza, Clecia de Moura; Moura, Esperidiana Augusta Barretos de; Chinellato, Anne; Rosa, Ricardo de

    2010-01-01

    In the present work, the influence of electron-beam irradiation on thermo-mechanical properties of HDPE and HDPE/Brazil nut shell fiber composite was investigated. The materials were irradiated at radiation dose 50 kGy using a 1.5 MeV electron beam accelerator, at room temperature in presence of air. The irradiated and non-irradiated samples were submitted to thermo-mechanical tests and the correlation between their properties was discussed. The results showed that the incorporation of Brazil nut shell fiber represented a significant gain (p < 0,05) in tensile strength at break, flexural strength, flexural module, Vicat softening temperature and heat distortion temperature (HDT) properties of the HDPE. In addition, the irradiated HDPE/Brazil nut shell fiber composite presented a significant increase (p < 0.05) in this properties compared with irradiated HDPE. (author)

  1. Sapphire scintillation tests for cryogenic detectors in the Edelweiss dark matter search

    Energy Technology Data Exchange (ETDEWEB)

    Luca, M

    2007-07-15

    Identifying the matter in the universe is one of the main challenges of modern cosmology and astrophysics. An important part of this matter seems to be made of non-baryonic particles. Edelweiss is a direct dark matter search using cryogenic germanium bolometers in order to look for particles that interact very weakly with the ordinary matter, generically known as WIMPs (weakly interacting massive particles). An important challenge for Edelweiss is the radioactive background and one of the ways to identify it is to use a larger variety of target crystals. Sapphire is a light target which can be complementary to the germanium crystals already in use. Spectroscopic characterization studies have been performed using different sapphire samples in order to find the optimum doping concentration for good low temperature scintillation. Ti doped crystals with weak Ti concentrations have been used for systematic X ray excitation tests both at room temperature and down to 30 K. The tests have shown that the best Ti concentration for optimum room temperature scintillation is 100 ppm and 50 ppm at T = 45 K. All concentrations have been checked by optical absorption and fluorescence. After having shown that sapphire had interesting characteristics for building heat-scintillation detectors, we have tested if using a sapphire detector was feasible within a dark matter search. During the first commissioning tests of Edelweiss-II, we have proved the compatibility between a sapphire heat scintillation detector and the experimental setup. (author)

  2. A comparison of mutagenic effects of common wheat by electron beam, fast neutron and 60Co gamma ray irradiation

    International Nuclear Information System (INIS)

    An Daochang; Wang Linqing

    1988-02-01

    After winter wheat was irradiated by electron beam, fast neutron and γ-rays, respectively, the RBE value of electron beam to both fast neutrons and γ-rays was less than one, the RBE value of fast neutron to γ-rays was largely more than one. This results indicated that biological effect of M 1 generation induced by electron beam was less than that of fast neutrons very much, and similar to γ-ray irradiation. With electron beam irradiation, the half-lethal doses of M 1 generation were from 185 to 370 Gy, closer to 370 Gy, the lethal doses from 740 to 925 Gy. M 2 mutation efficiency with electron beam treatment was larger as compared with that with both fast neutrons and γ-rays. A wider mutation spectrum and higher mutation efficiency compared with other physical mutagens can be obtained with electron beam irradiation, about 30% higher than that with γ-ray irradiation. The best doses of irradiation with electron beam were 370 to 555 Gy. Fast neutrons, a better dose of which was 25 Gy, could induce more mutants than that with γ-rays in M 2 generation. The dose in which biological injury reached to 50% was the best dose for M 2 mutants by electron beam irradiation

  3. Influence of electron beam irradiation on some properties of polypropylene membrane

    International Nuclear Information System (INIS)

    Buczkowski, M.; Wawszczak, D.; Starosta, W.

    2006-01-01

    In case of PP membrane material during electron irradiation outweighed degradation processes of polymeric chains and formation of radicals should be taken into account that stimulate another changes. From the point of view of increasing hydrophilic property, the formation of oligomers of polarity type is important. In the course of presented studies seven samples were treated by electron beam with doses: 5, 10, 14, 20, 25 and 35 kGy. It has been found, that radiation treatment does not change permeability in case of air stream, but causes a decrease of mechanical strength. Irradiation dose, however, should not be higher than about 14 kGy

  4. Analysis of volatile organic compounds of ‘Fuji’ apples following electron beam irradiation and storage

    International Nuclear Information System (INIS)

    Song, Hyun-Pa; Shim, Sung-Lye; Lee, Sun-Im; Kim, Dong-Ho; Kwon, Joong-Ho; Kim, Kyong-Su

    2012-01-01

    The volatile organic compounds of non-irradiated and electron-beam irradiated ‘Fuji’ apples (Malus domestica Borkh.) at 0, 0.5, and 1 kGy were isolated through simultaneous distillation extractions and analyzed using gas chromatograph–mass spectrometry. A total of 53 volatile organic compounds were characterized in 0 and 1 kGy irradiated samples, whereas two more compounds related to ketone and terpenoid group were identified in 0.5 kGy irradiated samples. The contents of volatile compounds were 24.33, 36.49, and 35.28 mg/kg in 0, 0.5, and 1 kGy irradiated samples, respectively. The major compounds identified were butanol, hexanal, [E]-2-hexenal, and hexanol in all samples. The relative content of alcohol increased after 30 days of storage in all samples, whereas that of aldehyde decreased. Although the contents of some volatile compounds were changed by electron-beam irradiation, the total yield and major flavor compounds of irradiated ‘Fuji’ apples were similar to, or even greater than, those of the control. Therefore, the application of e-beam irradiation if required for microbial decontamination of ‘Fuji’ apples is an acceptable method as it does not bring about any major quantitative changes of volatile organic compounds. - Highlights: ► We analyzed the volatile organic compounds of electron beam irradiated Fuji apples. ► The major compounds of samples were butanol, hexanal, [E]-2-hexenal, and hexanol. ► The contents of major flavor compounds of non-irradiated and irradiated samples were similar.

  5. Fabrication of Nonvolatile Memory Effects in High-k Dielectric Thin Films Using Electron Irradiation

    International Nuclear Information System (INIS)

    Park, Chanrock; Cho, Daehee; Kim, Jeongeun; Hwang, Jinha

    2010-01-01

    Electron Irradiation can be applied towards nano-floating gate memories which are recognized as one of the next-generation nonvolatile memory semiconductors. NFGMs can overcome the preexisting limitations encountered in Dynamic Random Access Memories and Flash memories with the excellent advantages, i. e. high-density information storage, high response speed, high compactness, etc. The traditional nano-floating gate memories are fabricated through multi-layered nano structures of the dissimilar materials where the charge-trapping portions are sandwiched into the high-k dielectrics. However, this work reports the unique nonvolatile responses in single-layered high-k dielectric thin films if irradiated with highly accelerated electron beams. The implications of the electron irradiation will be discussed towards high-performance nano-floating gate memories

  6. Defects in CdSe thin films, induced by high energy electron irradiation

    International Nuclear Information System (INIS)

    Ion, L.; Antohe, S.; Tutuc, D.; Antohe, V.A.; Tazlaoanu, C.

    2004-01-01

    Defects induced in CdSe thin films by high energy electron irradiation are investigated by means of thermally stimulated currents (TSC) spectroscopy. Films were obtained by vacuum deposition from a single source and irradiated with a 5 x 10 13 electrons/cm 2 s -1 beam of 6-MeV energy. It was found that electrical properties of the films are controlled by a deep donor state, located at 0.38 eV below the bottom edge of the conduction band. Parameters of the traps responsible for the recorded TSC peaks were determined. (authors)

  7. Impact of electron irradiation on particle track etching response in ...

    Indian Academy of Sciences (India)

    In the present work, attempts have been made to investigate the modification in particle track etching response of polyallyl diglycol carbonate (PADC) due to impact of 2 MeV electrons. PADC samples pre-irradiated to 1, 10, 20, 40, 60, 80 and 100 Mrad doses of 2 MeV electrons were further exposed to 140 MeV 28Si beam ...

  8. Structural disorder in sapphire induced by 90.3 MeV xenon ions

    International Nuclear Information System (INIS)

    Kabir, A.; Meftah, A.; Stoquert, J.P.; Toulemonde, M.; Monnet, I.; Izerrouken, M.

    2010-01-01

    In our previous work , we have evidenced, using RBS-C, two effects in the aluminium sublattice of sapphire irradiated with 90.3 MeV xenon ions: a partial disorder creation that saturates at ∼40% followed above a threshold fluence by a highly disordered layer appearing behind the surface. In this work, by RBS-C analysis of the oxygen sublattice, we have observed only one regime of partial disorder creation that saturates at ∼60% in tracks of cross-section double of that found for the aluminium sublattice. Complementary analysis by X-ray diffraction shows that the lattice strain increases with the fluence until a maximum is reached about 7.5 x 10 12 ions/cm 2 . For higher fluences, strain decreases first indicating a little stress relaxation in the material and tends afterwards, to remain constant. This stress relaxation is found to be related to the aluminium sublattice high disorder.

  9. Radiation doses inside industrial irradiation installation with linear electron accelerator

    International Nuclear Information System (INIS)

    Lima, Alexandre R.; Pelegrineli, Samuel Q.; Alo, Gabriel F.; Silva, Francisco C.A. Da

    2015-01-01

    Aceletron Industrial Irradiation Company is the unique installation in South America to provide industrial irradiation service using two linear electron accelerators of 18 kW and 10 MeV energy. The electron beam technology allows using electrons to irradiate many goods and materials, such as hospital and medical equipment, cosmetics, herbal products, polymers, peat, gemstones and food. Aceletron Company uses a concrete bunker with 3.66 m of thickness to provide the necessary occupational and environmental radiation protection of X-rays produced. The bunker is divided in main four areas: irradiation room, maze, tower and pit. Inside the irradiation room the x-rays radiation rates are measured in two ways: direct beam and 90 deg C. The rates produced in the conveyor system using 10 MeV energy are 500 Gy/min/mA and 15 Gy/min/mA, respectively. For a 1.8 mA current, the rates produced are 900 Gy/min and 27 Gy/min, respectively. Outside the bunker the radiation rate is at background level, but in the tower door and modulation room the radiation rate is 10 μSv/h. In 2014, during a routine operation, an effective dose of 30.90 mSv was recorded in a monthly individual dosimeter. After the investigation, it was concluded that the dose was only in the dosimeter because it felt inside the irradiation room. As Aceletron Company follows the principles of safety culture, it was decided to perform the radiation isodose curves, inside the four areas of the installation, to know exactly the hotspots positions, exposure times and radiation doses. Five hotspots were chosen taking into account worker's routes and possible operational places. The first experiment was done using a package with three TLD and OSLD dosimeters to obtain better statistical results. The first results for the five hotspots near the accelerator machine showed that the radiation dose rates were between 26 Gy/h and 31 Gy/h. The final measurements were performed using a package with one TLD and one OSLD

  10. Radiation doses inside industrial irradiation installation with linear electron accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Lima, Alexandre R., E-mail: alexandre.lima@cnen.gov.br [Comissao Nacional de Energia Nuclear (CNEN), Rio de Janeiro, RJ (Brazil); Pelegrineli, Samuel Q.; Alo, Gabriel F., E-mail: samuelfisica@yahoo.com.br, E-mail: gabriel.alo@aceletron.com.br [Aceletron Irradiacao Industrial, Aceletrica Comercio e Representacoes Ltda, Rio de Janeiro, RJ (Brazil); Silva, Francisco C.A. Da, E-mail: dasilva@ird.gov.br [Instituto de Radioprotecao e Dosimetria (IRD/CNEN-RJ), Rio de Janeiro, RJ (Brazil)

    2015-07-01

    Aceletron Industrial Irradiation Company is the unique installation in South America to provide industrial irradiation service using two linear electron accelerators of 18 kW and 10 MeV energy. The electron beam technology allows using electrons to irradiate many goods and materials, such as hospital and medical equipment, cosmetics, herbal products, polymers, peat, gemstones and food. Aceletron Company uses a concrete bunker with 3.66 m of thickness to provide the necessary occupational and environmental radiation protection of X-rays produced. The bunker is divided in main four areas: irradiation room, maze, tower and pit. Inside the irradiation room the x-rays radiation rates are measured in two ways: direct beam and 90 deg C. The rates produced in the conveyor system using 10 MeV energy are 500 Gy/min/mA and 15 Gy/min/mA, respectively. For a 1.8 mA current, the rates produced are 900 Gy/min and 27 Gy/min, respectively. Outside the bunker the radiation rate is at background level, but in the tower door and modulation room the radiation rate is 10 μSv/h. In 2014, during a routine operation, an effective dose of 30.90 mSv was recorded in a monthly individual dosimeter. After the investigation, it was concluded that the dose was only in the dosimeter because it felt inside the irradiation room. As Aceletron Company follows the principles of safety culture, it was decided to perform the radiation isodose curves, inside the four areas of the installation, to know exactly the hotspots positions, exposure times and radiation doses. Five hotspots were chosen taking into account worker's routes and possible operational places. The first experiment was done using a package with three TLD and OSLD dosimeters to obtain better statistical results. The first results for the five hotspots near the accelerator machine showed that the radiation dose rates were between 26 Gy/h and 31 Gy/h. The final measurements were performed using a package with one TLD and one OSLD

  11. Effect of high-energy electron irradiation in an electron microscope column on fluorides of alkaline earth elements (CaF2, SrF2, and BaF2)

    International Nuclear Information System (INIS)

    Nikolaichik, V. I.; Sobolev, B. P.; Zaporozhets, M. A.; Avilov, A. S.

    2012-01-01

    The effect of high-energy (150 eV) electron irradiation in an electron microscope column on crystals of fluorides of alkaline earth elements CaF 2 , SrF 2 , and BaF 2 is studied. During structural investigations by electron diffraction and electron microscopy, the electron irradiation causes chemical changes in MF 2 crystals such as the desorption of fluorine and the accumulation of oxygen in the irradiated area with the formation of oxide MO. The fluorine desorption rate increases significantly when the electron-beam density exceeds the threshold value of ∼2 × 10 3 pA/cm 2 ). In BaF 2 samples, the transformation of BaO into Ba(OH) 2 was observed when irradiation stopped. The renewal of irradiation is accompanied by the inverse transformation of Ba(OH) 2 into BaO. In the initial stage of irradiation of all MF 2 compounds, the oxide phase is in the single-crystal state with a lattice highly matched with the MF 2 matrix. When the irradiation dose is increased, the oxide phase passes to the polycrystalline phase. Gaseous products of MF 2 destruction (in the form of bubbles several nanometers in diameter) form a rectangular array with a period of ∼20 nm in the sample.

  12. Changes of surface electron states of InP under soft X-rays irradiation

    International Nuclear Information System (INIS)

    Yang Zhian; Yang Zushen; Jin Tao; Qui Rexi; Cui Mingqi; Liu Fengqin

    1999-01-01

    Changes of surface electronic states of InP under 1 keV X-ray irradiation is studied by X-ray photoelectron spectroscopy (XPS) and ultraviolet ray energy spectroscopy (UPS). The results show that the soft X-ray irradiation has little effect on In atoms but much on P atoms. The authors analysed the mechanism of irradiation and explained the major effect

  13. Preparation of thermal resistant-enhanced separators for lithium ion battery by electron beam irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Sohn, Joon Yong; Shin, Junhwa; Nho, Youngchang [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2012-03-15

    Micro-porous membrane made of polyethylene (PE) or polypropylene (PP) is most widely used as physical separators between the cathode and anode in lithium secondary batteries. However, the polymer membranes so soften or melt when the temperature reaches 130 .deg. C or higher because of thermal shrinkage of the polyolefin separators, and thaw low thermal stability may cause internal short circuiting or lead to thermal runaway. In this study, to realize a highly safe battery, we prepared three type separators as crosslinked PE separator, polymer-coated PE separator, and ceramic-coated PE separators, for lithium secondary battery by electron beam irradiation. We prepared crosslinked PE separators with the improved thermal stability by irradiating a commercial PE separator with an electron beam. A polymer-coated PE separator was prepared by a dip-coating of PVDF-HFP/PEGDMA on both sides of a PE separator followed by an electron beam irradiation. Ceramic-coated PE separator was prepared by coating ceramic particles on a PE separator followed by an electron beam irradiation. The prepared separators were characterized with FT-IR, SEM, electrolyte uptake, ion conductivity, thermal shrinkage and battery performance test.

  14. Effectiveness of trimethylopropane trimethacrylate for the electron-beam-irradiation-induced cross-linking of polylactic acid

    Energy Technology Data Exchange (ETDEWEB)

    Ng, Hon-Meng [Department of Chemical Engineering, Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, Jalan Genting Kelang, 53300 Setapak, Kuala Lumpur (Malaysia); Bee, Soo-Tueen, E-mail: beest@utar.edu.my [Department of Chemical Engineering, Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, Jalan Genting Kelang, 53300 Setapak, Kuala Lumpur (Malaysia); Ratnam, C.T. [Radiation Processing Technology Division, Malaysian Nuclear Agency, Bangi, 43000 Kajang, Selangor (Malaysia); Sin, Lee Tin; Phang, Yee-Yao; Tee, Tiam-Ting [Department of Chemical Engineering, Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, Jalan Genting Kelang, 53300 Setapak, Kuala Lumpur (Malaysia); Rahmat, A.R. [Department of Polymer Engineering, Faculty of Chemical Engineering, Universiti Teknologi Malaysia, 81310 UTM Skudai, Johor (Malaysia)

    2014-01-15

    Highlights: • Investigation of trimethylopropane trimethacrylate (TMPTMA) on electron beam irradiated PLA. • Irradiated PLA blends were weakened by incorporation of high amount of TMPTMA. • TMPTMA interacts with polymer free radicals to build crosslinking network. -- Abstract: The purpose of this research was to investigate the effects of various loading levels of trimethylopropane trimethacrylate (TMPTMA) on the properties of polylactic acid (PLA) cross-linked via electron-beam irradiation. PLA was compounded with 3–5 wt.% of TMPTMA to induce cross-linking upon subjection to electron-beam irradiation doses of 25–250 kGy. The physical properties of the PLA samples were characterised by means of X-ray diffraction, gel fraction and scanning electron microscopy analyses on fractured surfaces after tensile tests. The presence of TMPTMA in PLA was found to effectively increase the crystallite size and gel fraction. However, higher loading levels of TMPTMA could compromise the properties of the PLA/TMPTMA samples, indicating that a larger amount of monomer free radicals might promote degradation within the substantially cross-linked amorphous phase. Irradiation-induced cross-linking in the samples could improve the cross-linking density while decreasing the elongation and interfering with the crystallisation. These effects are caused by the intensive irradiation-induced chain scission that is responsible for the deterioration of the mechanical and crystalline properties of the samples.

  15. Effectiveness of trimethylopropane trimethacrylate for the electron-beam-irradiation-induced cross-linking of polylactic acid

    International Nuclear Information System (INIS)

    Ng, Hon-Meng; Bee, Soo-Tueen; Ratnam, C.T.; Sin, Lee Tin; Phang, Yee-Yao; Tee, Tiam-Ting; Rahmat, A.R.

    2014-01-01

    Highlights: • Investigation of trimethylopropane trimethacrylate (TMPTMA) on electron beam irradiated PLA. • Irradiated PLA blends were weakened by incorporation of high amount of TMPTMA. • TMPTMA interacts with polymer free radicals to build crosslinking network. -- Abstract: The purpose of this research was to investigate the effects of various loading levels of trimethylopropane trimethacrylate (TMPTMA) on the properties of polylactic acid (PLA) cross-linked via electron-beam irradiation. PLA was compounded with 3–5 wt.% of TMPTMA to induce cross-linking upon subjection to electron-beam irradiation doses of 25–250 kGy. The physical properties of the PLA samples were characterised by means of X-ray diffraction, gel fraction and scanning electron microscopy analyses on fractured surfaces after tensile tests. The presence of TMPTMA in PLA was found to effectively increase the crystallite size and gel fraction. However, higher loading levels of TMPTMA could compromise the properties of the PLA/TMPTMA samples, indicating that a larger amount of monomer free radicals might promote degradation within the substantially cross-linked amorphous phase. Irradiation-induced cross-linking in the samples could improve the cross-linking density while decreasing the elongation and interfering with the crystallisation. These effects are caused by the intensive irradiation-induced chain scission that is responsible for the deterioration of the mechanical and crystalline properties of the samples

  16. Effects of electron beam irradiation on inorganic exchanger AMP

    International Nuclear Information System (INIS)

    Rao, K.L.N.; Mathew, C.; Deshpande, R.S.; Jadhav, A.V.; Pande, B.M.; Shukla, J.P.

    1996-01-01

    The heteropolyacid salt inorganic exchanger ammonium molybdophosphate (AMP) was subjected to an electron dose upto 2 MGy to assess any possible radiation damage. The breakthrough and total exchange capacity of AMP for Cs + from simulated fission product solutions were determined for both control and irradiated samples. The scanning electron microscopy (SEM) and energy dispersive x-ray analysis (EDX) were deployed to examine any marked microscopic changes taking place in this exchanger. (author). 3 refs., 3 figs

  17. Electron irradiation effects in YBa2Cu3O/sub 7-δ/ single crystals

    International Nuclear Information System (INIS)

    Kirk, M.A.; Baker, M.C.; Liu, J.Z.; Lam, D.J.; Weber, H.W.

    1988-04-01

    Defect structures in YBa 2 Cu 3 O/sub 7/minus/δ/ produced by electron irradiation at 300/degree/K, were investigated by transmission electron microscopy. Threshold energies for the production of visible defects were determined to b 152 keV and 131 keV (+- 7 keV) in directions near the a- and b-axes, respectively (b > a, both perpendicular to c, the long axis in the orthorhombic structure). During above-threshold irradiations in an electron flux of 3 x 10 18 cm/sup /minus/2/s/sup /minus/1/, extended defects were observed to form and grow to sizes of 10--50 nm over 15 minutes, in material thicknesses varying between 20 and 200 nm. Upon irradiation between the a- and b-thresholds, movement of twin plane boundaries and shrinkage of twinned volume were observed. All these findings suggest oxygen atom displacements in the basal plane with recoil energies near 20 eV. Above-threshold irradiations also show the collapse of c-axis long-range order into a planar faulted defect structure with short range order peaks at 1.2 c and 1.07 c, depending on the irradiation direction. 9 refs., 4 figs

  18. Hydrogel Based on Crosslinked Methylcellulose Prepared by Electron Beam Irradiation for Wound Dressing Application

    Directory of Open Access Journals (Sweden)

    Ambyah Suliwarno

    2014-10-01

    Full Text Available The aim of this research is to explore the possibility of methylcellulose polymer to be used as wound dressing material prepared using electron beam technique. The methylcellulose paste solution with various of molecular weight (SM-4, SM-100, SM-400, SM-4000 and SM-8000 at different concentration (15-30% w/v were irradiated by using electron beam on the dose range of 10 kGy up to 40 kGy. Gel fraction and swelling ratio of hydrogels were determined gravimetrically. Tensile strength and elasticity of hydrogels were measured using a universal testing machine. It was found that with the increasing of irradiation dose from 10 up to 40 kGy, gel fraction and tensile strength were increased for all of hydrogels with various of molecular weight. On contrary, the swelling ratio of hydrogels decreased with increasing of irradiation dose. The optimum hydrogels elasticity were obtained from methylcellulose solution with the concentration range of 15-20% with irradiation dose of 20 kGy and showed excellent performance. The hydrogels based on methylcellulose prepared by electron beam irradiation can be considered for wound dressing material.

  19. Fe-N{sub x}/C assisted chemical–mechanical polishing for improving the removal rate of sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Li, E-mail: xl0522@126.com [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China); Zou, Chunli; Shi, Xiaolei [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China); Pan, Guoshun, E-mail: pangs@tsinghua.edu.cn [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China); Luo, Guihai; Zhou, Yan [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China)

    2015-07-15

    Highlights: • A novel non-noble metal catalyst (Fe-N{sub x}/C) was prepared. • Fe-N{sub x}/C shows remarkable catalytic activity for improving the removal rate of sapphire in alkaline solution. • The optimum CMP removal by Fe-N{sub x}/C yielded a superior surface finish of 0.078 nm the average roughness. • Fe{sub 2}O{sub 3}, Fe{sub 3}O{sub 4}, pyridinic N as well as pyrrolic N group possibly serving as the catalytic sites. • A soft hydration layer (boehmite, AlO(OH)) was generated on the surface of sapphire during CMP process. - Abstract: In this paper, a novel non-noble metal catalyst (Fe-N{sub x}/C) is used to improve the removal mass of sapphire as well as obtain atomically smooth sapphire wafer surfaces. The results indicate that Fe-N{sub x}/C shows good catalytic activity towards sapphire removal rate. And the material removal rates (MRRs) are found to vary with the catalyst content in the polishing fluid. Especially that when the polishing slurry mixes with 16 ppm Fe-N{sub x}/C shows the maximum MRR and its removal mass of sapphire is 38.43 nm/min, more than 15.44% larger than traditional CMP using the colloidal silicon dioxide (SiO{sub 2}) without Fe-N{sub x}/C. Catalyst-assisted chemical–mechanical polishing of sapphire is studied with X-ray photoelectron spectroscopy (XPS). It is found that the formation of a soft hydration layer (boehmite, γ-AlOOH or γ-AlO(OH)) on sapphire surface facilitates the material removal and achieving fine surface finish on basal plane. Abrasives (colloid silica together with magnetite, ingredient of Fe-N{sub x}/C) with a hardness between boehmite and sapphire polish the c-plane of sapphire with good surface finish and efficient removal. Fe{sub 2}O{sub 3}, Fe{sub 3}O{sub 4}, pyridinic N as well as pyrrolic N group would be the catalytical active sites and accelerate this process. Surface quality is characterized with atomic force microscopy (AFM). The optimum CMP removal by Fe-N{sub x}/C also yields a superior

  20. Electron beam irradiation of fluoropolymers containing polyethers

    International Nuclear Information System (INIS)

    Bucio, E.; Burillo, G.; Tapia, F.; Adem, E.; Cedillo, G.; Cassidy, P.E.

    2009-01-01

    A highly fluorinated monomer, 1,3-bis(1,1,1,3,3,3-hexafluoro-2-pentafluorophenyl methoxy-2-propyl)benzene (12F-FBE) was polymerized with some diphenols by polycondensation and then was electron beam irradiated between 100 and 1000 kGy to determine degradation radiochemistry yield (G s ) by gel permeation chromatography (GPC). The samples were characterized after irradiation by DSC, FTIR, and nuclear magnetic resonance (NMR). The fluoropolymers show apparent degradation in mechanical properties at 300 kGy, except 12F-FBE polymerized with biphenol and bisphenol A, when they did not show any apparent physical change up to 300 kGy; and continue to be flexible and transparent, with a radiochemical yield scission (G s ) of 0.75, 0.53, 0.88, and 0.38 for 12F-FBE/SDL aliphatic, 12F-FBE/biphenol, 12F-FBE/bisphenol A, and 12F-FBE/bisphenol O, respectively. The number average molecular weights for three of the polymers decrease upon 1000 kGy irradiation to 10% of their original values; however, the polymer from bisphenol A is much more stable and its M n decreases to only 24% of original

  1. Electron beam irradiation of fluoropolymers containing polyethers

    Science.gov (United States)

    Bucio, E.; Burillo, G.; Tapia, F.; Adem, E.; Cedillo, G.; Cassidy, P. E.

    2009-02-01

    A highly fluorinated monomer, 1,3-bis(1,1,1,3,3,3-hexafluoro-2-pentafluorophenyl methoxy-2-propyl)benzene (12F-FBE) was polymerized with some diphenols by polycondensation and then was electron beam irradiated between 100 and 1000 kGy to determine degradation radiochemistry yield ( Gs) by gel permeation chromatography (GPC). The samples were characterized after irradiation by DSC, FTIR, and nuclear magnetic resonance (NMR). The fluoropolymers show apparent degradation in mechanical properties at 300 kGy, except 12F-FBE polymerized with biphenol and bisphenol A, when they did not show any apparent physical change up to 300 kGy; and continue to be flexible and transparent, with a radiochemical yield scission ( Gs) of 0.75, 0.53, 0.88, and 0.38 for 12F-FBE/SDL aliphatic, 12F-FBE/biphenol, 12F-FBE/bisphenol A, and 12F-FBE/bisphenol O, respectively. The number average molecular weights for three of the polymers decrease upon 1000 kGy irradiation to 10% of their original values; however, the polymer from bisphenol A is much more stable and its Mn decreases to only 24% of original.

  2. Application of electron-beam irradiation combined with antioxidants for fermented sausage and its quality characteristic

    International Nuclear Information System (INIS)

    Lim, D.G.; Seol, K.H.; Jeon, H.J.; Jo, C.; Lee, M.

    2008-01-01

    The effects of various doses of electron-beam irradiation on the changes in microbiological attributes of fermented sausage and the combined effect of electron-beam irradiation and various antioxidants on the oxidative stability and sensory properties during cold storage were investigated. Results indicated that 2 kGy of irradiation was the most effective in manufacturing a fermented sausage, and the addition of rosemary extracts was effective in controlling the production of off-flavor and development of lipid oxidation during cold storage

  3. Application of electron-beam irradiation combined with antioxidants for fermented sausage and its quality characteristic

    Science.gov (United States)

    Lim, D. G.; Seol, K. H.; Jeon, H. J.; Jo, C.; Lee, M.

    2008-06-01

    The effects of various doses of electron-beam irradiation on the changes in microbiological attributes of fermented sausage and the combined effect of electron-beam irradiation and various antioxidants on the oxidative stability and sensory properties during cold storage were investigated. Results indicated that 2 kGy of irradiation was the most effective in manufacturing a fermented sausage, and the addition of rosemary extracts was effective in controlling the production of off-flavor and development of lipid oxidation during cold storage.

  4. Electron migration in hydrated biopolymers following pulsed irradiation at low temperatures

    International Nuclear Information System (INIS)

    Lith, D. van.

    1987-01-01

    Charge migration in biopolymer-water mixtures and the effect of water concentration on the charge migration is investigated by measuring the electrical conductivity and the light emission with the pulse radiolysis technique. A preliminary account of the microwave conductivity observed in hydrated DNA and collagen at low temperature after pulsed irradiation is given. The results show that when hydrated DNA or collagen are irradiated at low temperatures, conductivity transients with microsecond lifetime are observed. It is tentatively concluded that these transients are due to the highly mobile dry electron. The effect of water concentration on mobility, lifetime and migration distance of the electron is discussed. The effect of additives to the hydrated systems on the behaviour of the electron is described. It is shown that the observed effects of the additives confirm the earlier conclusions that the dry electron is the species responsible for the radiation induced conductivity. The water concentration in the DNA- and collagen-systems could be varied only between zero and approximately fifty percent, due to inhomogeneities which occur at higher water concentrations. Experiments on gelatin, a biopolymer which forms homogeneous samples with levels of hydration varying from almost zero to 100% water (ice) are described. Both the radiation induced and the dark microwave conductivity have been studied as a function of water content. Preliminary results of a study of the light emission from pulse irradiated DNA-water mixtures are reported in an attempt to establish a relation between the observed electron migration and the formation of excited states via charge neutralization. (Auth.)

  5. Bond formation in hafnium atom implantation into SiC induced by high-energy electron irradiation

    International Nuclear Information System (INIS)

    Yasuda, H.; Mori, H.; Sakata, T.; Naka, M.; Fujita, H.

    1992-01-01

    Bilayer films of Hf (target atoms)/α-SiC (substrate) were irradiated with 2 MeV electrons in an ultra-high voltage electron microscope (UHVEM), with the electron beam incident on the hafnium layer. As a result of the irradiation, hafnium atoms were implanted into the SiC substrate. Changes in the microstructure and valence electronic states associated with the implantation were studied by a combination of UHVEM and Auger valence electron spectroscopy. The implantation process is summarized as follows. (1) Irradiation with 2 MeV electrons first induces a crystalline-to-amorphous transition in α-SiC. (2) Hafnium atoms which have been knocked-off from the hafnium layer by collision with the 2 MeV electrons are implanted into the resultant amorphous SiC. (3) The implanted hafnium atoms make preferential bonding to carbon atoms. (4) With continued irradiation, the hafnium atoms repeat the displacement along the beam direction and the subsequent bonding with the dangling hybrids of carbon and silicon. The repetition of the displacement and subsequent bonding lead to the deep implantation of hafnium atoms into the SiC substrate. It is concluded that implantation successfully occurs when the bond strength between a constituent atom of a substrate and an injected atom is stronger than that between constituent atoms of a substrate. (Author)

  6. Interstitial loop growth in electron irradiated vacuum-remelted FV448

    International Nuclear Information System (INIS)

    Buswell, J.T.; Fisher, S.B.

    1979-05-01

    An investigation of the resistance to void swelling of the ferritic steel FV448 has been made in electron irradiation experiments in a High Voltage Electron Microscope. Overaged samples of vacuum-remelted FV448 showed zero swelling after irradiation to doses of up to 30 dpa, in the temperature range 400 to 550 0 C. The resistance to void swelling was due to the absence of mutual interaction between interstitial loops. Impurity segregation to the loops, and precipitation, prevented continuous dislocation climb, thus removing biased sinks from the system at low doses. An interstitial-impurity binding energy of 0.5 eV was measured, suggesting that the impurity responsible was carbon or nitrogen. Some effects attributable to the heating of thin foils in the HVEM environment were detected. (author)

  7. Electronic properties of semiinsulating GaAs irradiated by protons

    CERN Document Server

    Brudnyj, V N

    2001-01-01

    The n-to-p-type transformation of the conductivity and the decrease of resistivity (rho) down to 10 sup 2 Ohm cm (300 K) have been observed in a semi insulating GaAs (rho approx = (3-4) 10 sup 8 Ohm cm) upon proto n (5 MeV) bombardment with the dose up to D = 2 x 10 sup 1 sup 7 cm sup - sup 2. The temperature dependence of rho in heavy irradiated samples indicates that the conductivity is determined by the electron hopping within the temperature range (400-120) K and by the changeable hopping length at T <= 120 K. In proton irradiated low resistivity samples, the electronic switching effects have been revealed near 20 K. Isochronal annealing of the radiation-induced defects is investigated in the temperature range (20-750) deg C

  8. Preparation and structural properties of YBCO films grown on GaN/c-sapphire hexagonal substrate

    Energy Technology Data Exchange (ETDEWEB)

    Chromik, S., E-mail: stefan.chromik@savba.sk [Institute of Electrical Engineering, SAS, Dubravska cesta 9, 84104 Bratislava (Slovakia); Gierlowski, P. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Spankova, M.; Dobrocka, E.; Vavra, I.; Strbik, V.; Lalinsky, T.; Sojkova, M. [Institute of Electrical Engineering, SAS, Dubravska cesta 9, 84104 Bratislava (Slovakia); Liday, J.; Vogrincic, P. [Department of Microelectronics, Slovak Technical University, Ilkovicova 3, 81219 Bratislava (Slovakia); Espinos, J.P. [Instituto de Ciencia de Materiales de Sevilla, Avda Americo Vespucio 49, 41092 Sevilla (Spain)

    2010-07-01

    Epitaxial YBCO thin films have been grown on hexagonal GaN/c-sapphire substrates using DC magnetron sputtering and pulsed laser deposition. An MgO buffer layer has been inserted between the substrate and the YBCO film as a diffusion barrier. X-ray diffraction analysis indicates a c-axis oriented growth of the YBCO films. {Phi}-scan shows surprisingly twelve maxima. Transmission electron microscopy analyses confirm an epitaxial growth of the YBCO blocks with a superposition of three a-b YBCO planes rotated by 120 deg. to each other. Auger electron spectroscopy and X-ray photoelectron spectroscopy reveal no surface contamination with Ga even if a maximum substrate temperature of 700 deg. C is applied.

  9. Electron beam irradiation effects on carbon fiber reinforced PEEK composite

    International Nuclear Information System (INIS)

    Sasuga, Tsuneo; Hagiwara, Miyuki; Odajima, Tosikazu; Sakai, Hideo; Nakakura, Toshiyuki; Masutani, Masahiro.

    1987-03-01

    Carbon fiber(CF) reinforced composites, using polyarylether-sulfone (PES) or polyarylether-ether-ketone (PEEK) as matrix material, were prepared and their electron beam irradiation effects were studied on the basis of changes in mechanical and dynamic viscoelastic properties and observation of fracture surfaces. The flexural strength of PES-CF composite decreased to 70 % of the initial strength after the irradiation of 3 MGy and 40 % after 15 MGy. The change in the profile of stress-strain (S-S) curves and fractographic observation by electron microscopy indicated that this composite irradiated with over 3 MGy was fractured by delamination caused by to the degradation of matrix polymer. The mechanical properties of PEEK-CF composite were scarcely decreased even after irradiated up to 180 MGy and this composite showed very high radiation resistance. The change in the profile of S-S curves and fractographic observation showed that this composite fractured due to destruction of fiber in the dose range less than 180 MGy, indicating that PEEK was excellent matrix material used in high radiation field. PEEK-PES-CF composite which was composed of the carbon fibers coated with PES solution showed less radiation resistance compared with PEEK-CF composite; the flexural strength decreased to 85 % of the initial value after the irradiation with 90 MGy. It was revealed from the changes in the profile of S-S curve that the specimen irradiated over 120 MGy was fractured due to not only fiber destruction but delamination. Deterioration mechanism of PEEK-PES-CF composite was studied by dynamic viscoelastic measurements in connection with the damage on matrix-fiber interface. It was suggested that the deterioration in mechanical properties of this composite was caused by the degradation of PES that coated on the surface of the carbon fibers. (author)

  10. Effects of electron irradiation in space environment on thermal and mechanical properties of carbon fiber/bismaleimide composite

    International Nuclear Information System (INIS)

    Yu, Qi; Chen, Ping; Gao, Yu; Ma, Keming; Lu, Chun; Xiong, Xuhai

    2014-01-01

    Highlights: •Electron irradiation decreased the storage modulus finally. •T g decreased first and then increased and finally decreased. •The thermal stability was reduced and then improved and finally decreased. •The changing trend of flexural strength and ILSS are consistent. -- Abstract: The effects of electron irradiation in simulated space environment on thermal and mechanical properties of high performance carbon fiber/bismaleimide composites were investigated. The dynamic mechanical properties of the composites exposed to different fluences of electron irradiation were evaluated by Dynamic mechanical analysis (DMA). Thermogravimetric analysis was applied to investigate the changes in thermal stability of the resin matrix after exposure to electron irradiation. The changes in mechanical properties of the composites were evaluated by flexural strength and interlaminar shear strength (ILSS). The results indicated that electron irradiation in high vacuum had an impact on thermal and mechanical properties of CF/BMI composites, which depends on irradiation fluence. At lower irradiation fluences less than 5 × 10 15 cm −2 , the dynamic storage modulus, cross-linking degree, thermal stability and mechanical properties that were determined by a competing effect between chain scission and cross-linking process, decreased firstly and then increased. While at higher fluences beyond 5 × 10 15 cm −2 , the chain scission process was dominant and thus led to the degradation in thermal and mechanical properties of the composites

  11. Compact ILU-type electron accelerators as a base for industrial 4-sided irradiation systems for cable and tubes

    International Nuclear Information System (INIS)

    Auslender, V.L.; Nekhaev, V.E.; Panfilov, A.D.; Tuvik, A.A.

    1999-01-01

    The ILU-type industrial electron accelerators are developed in BINP sins 1967. Their energy range is 0.7-4.0 MeV at beam power of 20-50 kW. The comparison of the irradiation results after bilateral and four-sided irradiation of cables and tubes is given. It is shown that the required electron energy and beam power in the case of four-sided irradiation are sufficiently lower than in the case of bilateral irradiation, resulting in an increase of productive rate of the process and improvement of treatment quality. The installations for four-sided irradiation of cables and tubes are based on the industrial electron accelerators type ILU

  12. Nanoscratch Characterization of GaN Epilayers on c- and a-Axis Sapphire Substrates

    Directory of Open Access Journals (Sweden)

    Wen Hua-Chiang

    2010-01-01

    Full Text Available Abstract In this study, we used metal organic chemical vapor deposition to form gallium nitride (GaN epilayers on c- and a-axis sapphire substrates and then used the nanoscratch technique and atomic force microscopy (AFM to determine the nanotribological behavior and deformation characteristics of the GaN epilayers, respectively. The AFM morphological studies revealed that pile-up phenomena occurred on both sides of the scratches formed on the GaN epilayers. It is suggested that cracking dominates in the case of GaN epilayers while ploughing during the process of scratching; the appearances of the scratched surfaces were significantly different for the GaN epilayers on the c- and a-axis sapphire substrates. In addition, compared to the c-axis substrate, we obtained higher values of the coefficient of friction (μ and deeper penetration of the scratches on the GaN a-axis sapphire sample when we set the ramped force at 4,000 μN. This discrepancy suggests that GaN epilayers grown on c-axis sapphire have higher shear resistances than those formed on a-axis sapphire. The occurrence of pile-up events indicates that the generation and motion of individual dislocation, which we measured under the sites of critical brittle transitions of the scratch track, resulted in ductile and/or brittle properties as a result of the deformed and strain-hardened lattice structure.

  13. Nanopore formation on Au coated pyramid under electron beam irradiations (plasmonic nanopore on pyramid

    Directory of Open Access Journals (Sweden)

    Seong Soo Choi

    2016-03-01

    Full Text Available There have been tremendous interests about the single molecule analysis using a sold-state nanopore. The solid-state nanopore can be fabricated either by drilling technique, or diffusion technique by using electron beam irradiations. The solid-state SiN nanopore device with electrical detection technique recently fabricated, however, the solid-state Au nanopore with optical detection technique can be better utilized as the next generation single molecule sensor. In this report, the nanometer size openings with its size less than 10 nm on the diffused membrane on the 200 nm Au pyramid were fabricated by using field emission scanning electron microscopy (FESEM electron beam irradiations, transmission electron microscopy (TEM, etc. After the sample was being kept under a room environment for several months, several Au (111 clusters with ~6 nm diameter formed via Ostwald ripening are observed using a high resolution TEM imaging. The nanopore with Au nanoclusters on the diffused membrane can be utilized as an optical nanopore device. Keywords: Electron beam irradiation, Surface diffusion, Carbon contamination, Au cluster, Ostwald ripening

  14. Effectiveness of electron beam irradiation in the control of some soilborne pathogens

    International Nuclear Information System (INIS)

    Orlikowski, L.B.; Ptaszek, M.; Migdal, W.; Gryczka, U.

    2011-01-01

    Electron beam (EB) irradiation was tested against Botrytis cinerea, Pythium ultimum and Phytophthora citricola the most dangerous pathogens causing stem and root rot of seedlings, cuttings and older plants. In the laboratory trials cultures of 3 species were irradiated with doses 0 (control), 1.5, 3.0, 4.5 and 6.0 kGy whereas peat was treated with 10, 15 and 25 kGy. P. citricola was the most sensitive species for irradiation. In greenhouse trials 15 kGy irradiation of peat protected chrysanthemum cuttings against B. cinerea and P. ultimum as well as rhododendron young plants against P. citricola. Irradiation of peat did not influence the growth and development of the tested plants. (authors)

  15. Sterilizing effect of irradiation for Zuogui power with electron beam and γ-rays

    International Nuclear Information System (INIS)

    Yue Ling; Kong Qiulian; Qi Wenyuan; Bao Yingzi; Chen Zhijun; Yuan Zhongyi

    2011-01-01

    The sterilizing effect of irradiation for Zuogui powder with accelerator (electron beam) and a cobalt unit (γ-rays) was studied. The results indicated that the D 10 values of E-beam irradiation and γ-rays irradiation were 2.602 kGy and 2.597 kGy for aerobic bacterial count, while those were 3.112 kGy and 3.208 kGy for mould and yeasts. (authors)

  16. Defect structures in YBa2Cu3O/sub 7-x/ produced by electron irradiation

    International Nuclear Information System (INIS)

    Kirk, M.A.; Baker, M.C.; Liu, J.Z.; Lam, D.J.; Weber, H.W.

    1987-12-01

    Defect structures in YBa 2 Cu 3 O/sub 7-x/ produced by electron irradiation at 300 0 K were investigated by transmission electron microscopy. Threshold energies for the production of visible defects were determined to be 152 keV and 131 keV (+- 7 keV) in directions near the a and b (b > a) axes (both perpendicular to c, the long axis in the orthorhombic structure), respectively. During above threshold irradiations in an electron flux of 3 x 10 18 cm -2 s -1 , extended defects were observed to form and grow to sizes of 10 to 50 nm over 1000 s in material thicknesses 20 to 200 nm. Such low electron threshold energies suggest oxygen atom displacements with recoil energies near 20 eV. The observation of movement of twin boundaries during irradiation just above threshold suggests movement of the basal plane oxygen atoms by direct displacement or defect migration processes. Crystals irradiated above threshold were observed after about 24 hours to have transformed to a structure heavily faulted on planes perpendicular to the c axis. 3 refs., 3 figs

  17. Influence of electron beam Irradiation on PP/Piassava fiber composite prepared by melt extrusion process

    International Nuclear Information System (INIS)

    Gomes, Michelle G.; Ferreira, Maiara S.; Oliveira, Rene R.; Silva, Valquiria A.; Teixeira, Jaciele G.; Moura, Esperidiana A.B.

    2013-01-01

    In the latest years, the interest for the use of natural fibers in materials composites polymeric has increased significantly due to their environmental and technological advantages. Piassava fibers (Attalea funifera) have been used as reinforcement in the matrix of thermoplastic and thermoset polymers. In the present work (20%, in mass), piassava fibers with particle sizes equal or smaller than 250 μm were incorporated in the polypropylene matrix (PP) no irradiated and polypropylene matrix containing 10 % and 30 % of polypropylene treated by electron-beam radiation at 40 kGy (PP/PPi/Piassava). The composites PP/Piassava and PP/PPi/Piassava were prepared by using a twin screw extruder, followed by injection molding. The composite material samples obtained were treated by electron-beam radiation at 40 kGy, using a 1.5 MeV electron beam accelerator, at room temperature, in presence of air. After irradiation treatment, the irradiated and non-irradiated specimens tests samples were submitted to thermo-mechanical tests, melt flow index (MFI), sol-gel analysis, X-Ray diffraction (XRD) and scanning electron microscopy (SEM). (author)

  18. Compositional redistribution in alloy films under high-voltage electron microscope irradiation

    Science.gov (United States)

    Lam, Nghi Q.; Leaf, O. K.; Minkoff, M.

    1983-10-01

    The problem of nonequilibrium segregation in alloy films under high-voltage electron microscope (HVEM) irradiation at elevated temperatures is re-examined in the present work, taking into account the damage-rate gradients caused by radial variation in the electron flux. Axial and radial compositional redistributions in model solid solutions, representative of concentrated Ni-Cu, Ni-Al and Ni-Si alloys, were calculated as a function of time, temperature, and film thickness, using a kinetic theory of segregation in binary alloys. The numerical results were achieved by means of a new software package (DISPL2) for solving convection-diffusion-kinetics problems with general orthogonal geometries. It was found that HVEM irradiation-induced segregation in thin films consists of two stages. Initially, due to the proximity of the film surfaces as sinks for point defects, the usual axial segregation (to surfaces) occurs at relatively short irradiation times, and rapidly attains quasi-steady state. Then, radial segregation becomes more and more competitive, gradually affecting the kinetics of axial segregation. At a given temperature, the buildup time to steady state is much longer in the present situation than in the simple case of one-dimensional segregation with uniform defect production. Changes in the alloy composition occur in a much larger zone than the irradiated volume. As a result, the average alloy composition within the irradiated region can differ greatly from that of the unirradiated alloy. The present calculations may be useful in the interpretation of the kinetics of certain HVEM irradiation-induced processes in alloys.

  19. Water swelling properties of the electron beam irradiated PVA-g-AAc hydrogels

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Qingguo, E-mail: qwang@qust.edu.cn [Key Laboratory of Rubber-Plastics of Ministry of Education, Qingdao University of Science and Technology, Qingdao 266042 (China); Shandong Provincial Key Laboratory of Rubber-Plastics, Qingdao 266042 (China); Zhou, Xue; Zeng, Jinxia; Wang, Jizeng [Key Laboratory of Rubber-Plastics of Ministry of Education, Qingdao University of Science and Technology, Qingdao 266042 (China)

    2016-02-01

    In this paper, the electron beam irradiation technology being more suitable for the industry application is explored to fabricate the acrylic acid (AAc) monomer-grafted polyvinyl alcohol (PVA-g-AAc) hydrogels. ATR-IR spectra of the PVA-g-AAc hydrogels shows an obvious absorption peak of the −C=O group at 1701 cm{sup −1}, indicating that the AAc monomers were grafted onto the PVA macromolecules. This paper also studied some effects of the mass ratio of PVA/AAc, pH of buffer solution and irradiation dosage on the water swelling properties of the electron beam irradiated PVA-g-AAc hydrogels. The water swelling ratio of PVA-g-AAc hydrogels decreases with increased irradiation dosage and mass ratio of PVA/AAc, whereas swelling ratio increases with increased pH of buffer solution and soaking time. The water-swelling behavior of PVA-g-AAc hydrogels occurred easily in an alkaline environment, particularly in a buffer solution with pH 9.2. Both PVA-g-AAc hydrogels (PVA/AAc = 1/5, w/w) irradiated with 5 kilogray (kGy) and PVA-g-AAc hydrogels (PVA/AAc = 1/1, w/w) irradiated with 15 kGy could easily absorb water and lead to high water swelling ratios (up to about 600%), which are potential candidates to meet the requirements for some biomedical applications.

  20. Low temperature electron beam irradiation effects on the lactate dehydrogenase activity

    International Nuclear Information System (INIS)

    Catana, D.; Hategan, Alina; Oproiu, C.; Popescu, Alina; Hategan, Dora; Morariu, V. V.

    1998-01-01

    The direct and indirect effects of 5 MeV electron beam irradiation in the range 0-400 Gy at 20 deg. C, -3 deg. C and -196 deg. C on the global enzymatic activity of lactate dehydrogenase (LDH) have been studied. Our results showed a monoexponential decrease in the enzymatic activity of irradiated LDH at all irradiation temperatures independently of direct or indirect action of radiation. The temperature gradient used to lower the temperature of the samples to -196 deg. C drastically influences the results. Our data suggest that freeze-thawing in two steps down to -196 deg. C make LDH insensitive to irradiation, while one step freeze-thawing procedure results in a gradual activity loss with increasing dose irradiation. This data can be interpreted in terms of different conformational changes during the particular freeze-thawing process. (authors)