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Sample records for electron injection layer

  1. Electron injection mechanisms of green organic light-emitting devices fabricated utilizing a double electron injection layer consisting of cesium carbonate and fullerene

    International Nuclear Information System (INIS)

    Yang, J.S.; Choo, D.C.; Kim, T.W.; Jin, Y.Y.; Seo, J.H.; Kim, Y.K.

    2010-01-01

    Electron injection mechanisms of the luminance efficiency of green organic light-emitting devices (OLEDs) fabricated utilizing a cesium carbonate (Cs 2 CO 3 )/fullerene (C 60 ) heterostructure acting as an electron injection layer (EIL) were investigated. Current density-voltage and luminance-voltage measurements showed that the current densities and the luminances of the OLEDs with a Cs 2 CO 3 or Cs 2 CO 3 /C 60 EIL were higher than that of the OLEDs with a Liq EIL. The luminance efficiency of the OLEDs with a Cs 2 CO 3 EIL was almost three times higher than that of the OLEDs with a Liq EIL. Because the electron injection efficiency of the Cs 2 CO 3 layer in OLEDs was different from that of the C 60 layer, the luminance efficiency of the OLEDs with a double EIL consisting of a Cs 2 CO 3 layer and a C 60 layer was smaller than that of the OLEDs with a Cs 2 CO 3 EIL. The electron injection mechanisms of OLEDs with a Cs 2 CO 3 and C 60 double EIL are described on the basis of the experimental results.

  2. Improved electron injection into Alq{sub 3} based devices using a thin Erq{sub 3} injection layer

    Energy Technology Data Exchange (ETDEWEB)

    Shakya, P; Desai, P; Gillin, W P [Department of Physics, Queen Mary, University of London, Mile End Road, London, E1 4NS (United Kingdom); Curry, R J [Advanced Technology Institute, School of Electronics and Physical Sciences, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom)

    2008-04-21

    The role of a thin erbium(III) tris(8-hydroxyquinoline) (Erq{sub 3}) interface layer on the electron injection into aluminium(III) tris(8-hydroxyquinoline) (Alq{sub 3}) based organic light emitting devices (OLEDs) has been investigated. It has been shown that the use of a 40 A interface layer can increase the efficiency of a simple Alq{sub 3} OLED with an Al cathode to a level comparable with other, well established, high-efficiency cathodes such as LiF/Al. We also show that, despite the bulk HOMO and LUMO positions for Erq{sub 3} being little different from those for Alq{sub 3}, the presence of an interfacial layer makes the devices turn-on voltage almost independent of the cathode metal. This is explained by there being a vacuum level shift for Erq{sub 3} which is dependent on the work function of the cathode metal.

  3. Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes

    International Nuclear Information System (INIS)

    Lu, Yu-Hsuan; Pilkuhn, Manfred H.; Fu, Yi-Keng; Chu, Mu-Tao; Huang, Shyh-Jer; Su, Yan-Kuin; Wang, Kang L.

    2014-01-01

    The influence of the AlGaN electron blocking layer (EBL) with graded aluminum composition on electron confinement and hole injection in AlGaN-based ultraviolet light-emitting diodes (LEDs) are investigated. The light output power of LED with graded AlGaN EBL was markedly improved, comparing to LED with conventional EBL. In experimental results, a high increment of 86.7% can be obtained in light output power. Simulation analysis shows that via proper modification of the barrier profile from the last barrier of the active region to EBL, not only the elimination of electron overflow to p-type layer can be achieved but also the hole injection into the active region can be enhanced, compared to a conventional LED structure. The dominant factor to the performance improvement is shown to be the modulation of polarization field by the graded Al composition in EBL

  4. Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Yu-Hsuan; Pilkuhn, Manfred H. [Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Fu, Yi-Keng; Chu, Mu-Tao [Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan (China); Huang, Shyh-Jer, E-mail: yksu@mail.ncku.edu.tw, E-mail: totaljer48@gmail.com [Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, California 90095 (United States); Su, Yan-Kuin, E-mail: yksu@mail.ncku.edu.tw, E-mail: totaljer48@gmail.com [Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Department of Electronic Engineering, Kun-Shan University, Tainan 71003, Taiwan (China); Wang, Kang L. [Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, California 90095 (United States)

    2014-03-21

    The influence of the AlGaN electron blocking layer (EBL) with graded aluminum composition on electron confinement and hole injection in AlGaN-based ultraviolet light-emitting diodes (LEDs) are investigated. The light output power of LED with graded AlGaN EBL was markedly improved, comparing to LED with conventional EBL. In experimental results, a high increment of 86.7% can be obtained in light output power. Simulation analysis shows that via proper modification of the barrier profile from the last barrier of the active region to EBL, not only the elimination of electron overflow to p-type layer can be achieved but also the hole injection into the active region can be enhanced, compared to a conventional LED structure. The dominant factor to the performance improvement is shown to be the modulation of polarization field by the graded Al composition in EBL.

  5. Enhancing Carrier Injection Using Graded Superlattice Electron Blocking Layer for UVB Light-Emitting Diodes

    KAUST Repository

    Janjua, Bilal

    2014-12-01

    We have studied enhanced carrier injection by having an electron blocking layer (EBL) based on a graded superlattice (SL) design. Here, we examine, using a selfconsistent 6 × 6 k.p method, the energy band alignment diagrams under equilibrium and forward bias conditions while also considering carrier distribution and recombination rates (Shockley-Read-Hall, Auger, and radiative recombination rates). The graded SL is based on AlxGa1-xN (larger bandgap) Al0:5Ga0:5N (smaller bandgap) SL, where x is changed from 0.8 to 0.56 in steps of 0.06. Graded SL was found to be effective in reducing electron leakage and enhancing hole injection into the active region. Due to our band engineering scheme for EBL, four orders-of-magnitude enhancement were observed in the direct recombination rate, as compared with the conventional bulk EBL consisting of Al0:8Ga0:2N. An increase in the spatial overlap of carrier wavefunction was obtained due to polarization-induced band bending in the active region. An efficient single quantum-well ultraviolet-B light-emitting diode was designed, which emits at 280 nm. This is the effective wavelength for water disinfection application, among others.

  6. Investigation of organic light-emitting diodes with novel organic electron injection layers

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Sunae; Sethuraman, Kunjithapatham; An, Jongdeok; Im, Chan [Konkuk University, Seoul (Korea, Republic of); Hwang, Boseon [Jinwoong Industrial Co. Ltd., Seoul (Korea, Republic of)

    2012-03-15

    1-(diphenyl-phosphinoyl)-4-(2,2-diphenyl-vinyl)-benzene (DpDvB) and 4-(diphenyl-phosphinoyl)-4'-(2,2-diphenyl-vinyl)-biphenyl (DpDvBp) have been prepared and used as efficient electron injection layers (EILs) between aluminum cathode and tris (8-hydroxyquinoline) aluminum organic light emitting diodes (OLED). The performances of devices with different thicknesses of DpDvB and DpDvBp were investigated. Experimental results show that the turn-on voltage of the devices was decreased and the luminance of the devices was enhanced with increasing thickness of the EILs. Power efficiencies of 1.07 lm/W and 0.97 lm/W were obtained by inserting a 3-nm-thick EIL of DpDvB and a 5 nm thick EIL of DpDvBp, respectively. These efficiencies are comparable to that of the device using LiF as an EIL. The results prove that DpDvB and DpDvBp layers are also suitable for efficient EILs in OLEDs.

  7. Enhancing Carrier Injection Using Graded Superlattice Electron Blocking Layer for UVB Light-Emitting Diodes

    KAUST Repository

    Janjua, Bilal; Ng, Tien Khee; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

    2014-01-01

    is changed from 0.8 to 0.56 in steps of 0.06. Graded SL was found to be effective in reducing electron leakage and enhancing hole injection into the active region. Due to our band engineering scheme for EBL, four orders-of-magnitude enhancement were observed

  8. A layer-by-layer ZnO nanoparticle-PbS quantum dot self-assembly platform for ultrafast interfacial electron injection

    KAUST Repository

    Eita, Mohamed Samir

    2014-08-28

    Absorbent layers of semiconductor quantum dots (QDs) are now used as material platforms for low-cost, high-performance solar cells. The semiconductor metal oxide nanoparticles as an acceptor layer have become an integral part of the next generation solar cell. To achieve sufficient electron transfer and subsequently high conversion efficiency in these solar cells, however, energy-level alignment and interfacial contact between the donor and the acceptor units are needed. Here, the layer-by-layer (LbL) technique is used to assemble ZnO nanoparticles (NPs), providing adequate PbS QD uptake to achieve greater interfacial contact compared with traditional sputtering methods. Electron injection at the PbS QD and ZnO NP interface is investigated using broadband transient absorption spectroscopy with 120 femtosecond temporal resolution. The results indicate that electron injection from photoexcited PbS QDs to ZnO NPs occurs on a time scale of a few hundred femtoseconds. This observation is supported by the interfacial electronic-energy alignment between the donor and acceptor moieties. Finally, due to the combination of large interfacial contact and ultrafast electron injection, this proposed platform of assembled thin films holds promise for a variety of solar cell architectures and other settings that principally rely on interfacial contact, such as photocatalysis. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Electron-Hole Asymmetry of Spin Injection and Transport in Single-Layer Graphene

    OpenAIRE

    Han, Wei; Wang, W. H.; Pi, K.; McCreary, K. M.; Bao, W.; Li, Yan; Miao, F.; Lau, C. N.; Kawakami, R. K.

    2009-01-01

    Spin-dependent properties of single-layer graphene (SLG) have been studied by non-local spin valve measurements at room temperature. Gate voltage dependence shows that the non-local magnetoresistance (MR) is proportional to the conductivity of the SLG, which is the predicted behavior for transparent ferromagnetic/nonmagnetic contacts. While the electron and hole bands in SLG are symmetric, gate voltage and bias dependence of the non-local MR reveal an electron-hole asymmetry in which the non-...

  10. Analysis of the Electrical Properties of an Electron Injection Layer in Alq3-Based Organic Light Emitting Diodes.

    Science.gov (United States)

    Kim, Soonkon; Choi, Pyungho; Kim, Sangsub; Park, Hyoungsun; Baek, Dohyun; Kim, Sangsoo; Choi, Byoungdeog

    2016-05-01

    We investigated the carrier transfer and luminescence characteristics of organic light emitting diodes (OLEDs) with structure ITO/HAT-CN/NPB/Alq3/Al, ITO/HAT-CN/NPB/Alq3/Liq/Al, and ITO/HAT-CN/NPB/Alq3/LiF/A. The performance of the OLED device is improved by inserting an electron injection layer (EIL), which induces lowering of the electron injection barrier. We also investigated the electrical transport behaviors of p-Si/Alq3/Al, p-Si/Alq3/Liq/Al, and p-Si/Alq3/LiF/Al Schottky diodes, by using current-voltage (L-V) and capacitance-voltage (C-V) characterization methods. The parameters of diode quality factor n and barrier height φ(b) were dependent on the interlayer materials between Alq3 and Al. The barrier heights φ(b) were 0.59, 0.49, and 0.45 eV, respectively, and the diode quality factors n were 1.34, 1.31, and 1.30, respectively, obtained from the I-V characteristics. The built in potentials V(bi) were 0.41, 0.42, and 0.42 eV, respectively, obtained from the C-V characteristics. In this experiment, Liq and LiF thin film layers improved the carrier transport behaviors by increasing electron injection from Al to Alq3, and the LiF schottky diode showed better I-V performance than the Liq schottky diode. We confirmed that a Liq or LiF thin film inter-layer governs electron and hole transport at the Al/Alq3 interface, and has an important role in determining the electrical properties of OLED devices.

  11. Enhanced brightness of organic light-emitting diodes based on Mg:Ag cathode using alkali metal chlorides as an electron injection layer

    International Nuclear Information System (INIS)

    Zou Ye; Deng Zhenbo; Xu Denghui; Lü Zhaoyue; Yin Yuehong; Du Hailiang; Chen Zheng; Wang Yongsheng

    2012-01-01

    Different thicknesses of cesium chloride (CsCl) and various alkali metal chlorides were inserted into organic light-emitting diodes (OLEDs) as electron injection layers (EILs). The basic structure of OLED is indium tin oxide (ITO)/N,N′-diphenyl-N,N′-bis(1-napthyl-phenyl)-1.1′-biphenyl-4.4′-diamine (NPB)/tris-(8-hydroxyquinoline) aluminum (Alq 3 )/Mg:Ag/Ag. The electroluminescent (EL) performance curves show that both the brightness and efficiency of the OLEDs can be obviously enhanced by using a thin alkali metal chloride layer as an EIL. The electron injection barrier height between the Alq 3 layer and Mg:Ag cathode is reduced by inserting a thin alkali metal chloride as an EIL, which results in enhanced electron injection and electron current. Therefore, a better balance of hole and electron currents at the emissive interface is achieved and consequently the brightness and efficiency of OLEDs are improved. - Highlights: ► Alkaline metal chlorides were used as electron injection layers in organic light-emitting diodes based on Mg:Ag cathode. ► Brightness and efficiency of OLEDs with alkaline metal chlorides as electron injection layers were all greatly enhanced. ► The Improved OLED performance was attributed to the possible interfacial chemical reaction. ► Electron-only devices are fabricated to demonstrate the electron injection enhancement.

  12. COLLISIONLESS ELECTRON–ION SHOCKS IN RELATIVISTIC UNMAGNETIZED JET–AMBIENT INTERACTIONS: NON-THERMAL ELECTRON INJECTION BY DOUBLE LAYER

    International Nuclear Information System (INIS)

    Ardaneh, Kazem; Cai, Dongsheng; Nishikawa, Ken-Ichi

    2016-01-01

    The course of non-thermal electron ejection in relativistic unmagnetized electron–ion shocks is investigated by performing self-consistent particle-in-cell simulations. The shocks are excited through the injection of a relativistic jet into ambient plasma, leading to two distinct shocks (referred to as the trailing shock and leading shock) and a contact discontinuity. The Weibel-like instabilities heat the electrons up to approximately half of the ion kinetic energy. The double layers formed in the trailing and leading edges then accelerate the electrons up to the ion kinetic energy. The electron distribution function in the leading edge shows a clear, non-thermal power-law tail which contains ∼1% of electrons and ∼8% of the electron energy. Its power-law index is −2.6. The acceleration efficiency is ∼23% by number and ∼50% by energy, and the power-law index is −1.8 for the electron distribution function in the trailing edge. The effect of the dimensionality is examined by comparing the results of three-dimensional simulations with those of two-dimensional simulations. The comparison demonstrates that electron acceleration is more efficient in two dimensions.

  13. Syringe injectable electronics

    Science.gov (United States)

    Hong, Guosong; Zhou, Tao; Jin, Lihua; Duvvuri, Madhavi; Jiang, Zhe; Kruskal, Peter; Xie, Chong; Suo, Zhigang; Fang, Ying; Lieber, Charles M.

    2015-01-01

    Seamless and minimally-invasive three-dimensional (3D) interpenetration of electronics within artificial or natural structures could allow for continuous monitoring and manipulation of their properties. Flexible electronics provide a means for conforming electronics to non-planar surfaces, yet targeted delivery of flexible electronics to internal regions remains difficult. Here, we overcome this challenge by demonstrating syringe injection and subsequent unfolding of submicrometer-thick, centimeter-scale macroporous mesh electronics through needles with a diameter as small as 100 micrometers. Our results show that electronic components can be injected into man-made and biological cavities, as well as dense gels and tissue, with > 90% device yield. We demonstrate several applications of syringe injectable electronics as a general approach for interpenetrating flexible electronics with 3D structures, including (i) monitoring of internal mechanical strains in polymer cavities, (ii) tight integration and low chronic immunoreactivity with several distinct regions of the brain, and (iii) in vivo multiplexed neural recording. Moreover, syringe injection enables delivery of flexible electronics through a rigid shell, delivery of large volume flexible electronics that can fill internal cavities and co-injection of electronics with other materials into host structures, opening up unique applications for flexible electronics. PMID:26053995

  14. Syringe-injectable electronics.

    Science.gov (United States)

    Liu, Jia; Fu, Tian-Ming; Cheng, Zengguang; Hong, Guosong; Zhou, Tao; Jin, Lihua; Duvvuri, Madhavi; Jiang, Zhe; Kruskal, Peter; Xie, Chong; Suo, Zhigang; Fang, Ying; Lieber, Charles M

    2015-07-01

    Seamless and minimally invasive three-dimensional interpenetration of electronics within artificial or natural structures could allow for continuous monitoring and manipulation of their properties. Flexible electronics provide a means for conforming electronics to non-planar surfaces, yet targeted delivery of flexible electronics to internal regions remains difficult. Here, we overcome this challenge by demonstrating the syringe injection (and subsequent unfolding) of sub-micrometre-thick, centimetre-scale macroporous mesh electronics through needles with a diameter as small as 100 μm. Our results show that electronic components can be injected into man-made and biological cavities, as well as dense gels and tissue, with >90% device yield. We demonstrate several applications of syringe-injectable electronics as a general approach for interpenetrating flexible electronics with three-dimensional structures, including (1) monitoring internal mechanical strains in polymer cavities, (2) tight integration and low chronic immunoreactivity with several distinct regions of the brain, and (3) in vivo multiplexed neural recording. Moreover, syringe injection enables the delivery of flexible electronics through a rigid shell, the delivery of large-volume flexible electronics that can fill internal cavities, and co-injection of electronics with other materials into host structures, opening up unique applications for flexible electronics.

  15. Enhanced performance of inverted organic photovoltaic cells using CNTs-TiO(X) nanocomposites as electron injection layer.

    Science.gov (United States)

    Zhang, Hong; Xu, Meifeng; Cui, Rongli; Guo, Xihong; Yang, Shangyuan; Liao, Liangsheng; Jia, Quanjie; Chen, Yu; Dong, Jinquan; Sun, Baoyun

    2013-09-06

    In this study, we fabricated inverted organic photovoltaic cells with the structure ITO/carbon nanotubes (CNTs)-TiO(X)/P3HT:PCBM/MoO₃/Al by spin casting CNTs-TiO(X) nanocomposite (CNTs-TiO(X)) as the electron injection layer onto ITO/glass substrates. The power conversion efficiency (PCE) of the 0.1 wt% single-walled nanotubes (SWNTs)-TiO(X) nanocomposite device was almost doubled compared with the TiO(X) device, but with increasing concentration of the incorporated SWNTs in the TiO(X) film, the performance of the devices appeared to decrease rapidly. Devices with multi-walled NTs in the TiO(X) film have a similar trend. This phenomenon mainly depends on the inherent physical and chemical characteristics of CNTs such as their high surface area, their electron-accepting properties and their excellent carrier mobility. However, with increasing concentration of CNTs, CNTs-TiO(X) current leakage pathways emerged and also a recombination of charges at the interfaces. In addition, there was a significant discovery. The incorporated CNTs were highly conducive to enhancing the degree of crystallinity and the ordered arrangement of the P3HT in the active layers, due to the intermolecular π-π stacking interactions between CNTs and P3HT.

  16. Electron injection in microtron

    International Nuclear Information System (INIS)

    Axinescu, S.

    1977-01-01

    A review of the methods of injecting electrons in the microtron is presented. A special attention is paid to efficient injection systems developed by Wernholm and Kapitza. A comparison of advantages and disadvantages of both systems is made in relation to the purpose of the microtron. (author)

  17. Enhancing carrier injection in the active region of a 280nm emission wavelength LED using graded hole and electron blocking layers

    KAUST Repository

    Janjua, Bilal

    2014-02-27

    A theoretical investigation of AlGaN UV-LED with band engineering of hole and electron blocking layers (HBL and EBL, respectively) was conducted with an aim to improve injection efficiency and reduce efficiency droop in the UV LEDs. The analysis is based on energy band diagrams, carrier distribution and recombination rates (Shockley-Reed-Hall, Auger, and radiative recombination rates) in the quantum well, under equilibrium and forward bias conditions. Electron blocking layer is based on AlaGa1-aN / Al b → cGa1-b → 1-cN / AldGa 1-dN, where a < d < b < c. A graded layer sandwiched between large bandgap AlGaN materials was found to be effective in simultaneously blocking electrons and providing polarization field enhanced carrier injection. The graded interlayer reduces polarization induced band bending and mitigates the related drawback of impediment of holes injection. Similarly on the n-side, the Alx → yGa1-x → 1-yN / AlzGa 1-zN (x < z < y) barrier acts as a hole blocking layer. The reduced carrier leakage and enhanced carrier density in the active region results in significant improvement in radiative recombination rate compared to a structure with the conventional rectangular EBL layers. The improvement in device performance comes from meticulously designing the hole and electron blocking layers to increase carrier injection efficiency. The quantum well based UV-LED was designed to emit at 280nm, which is an effective wavelength for water disinfection application.

  18. Enhancing carrier injection in the active region of a 280nm emission wavelength LED using graded hole and electron blocking layers

    KAUST Repository

    Janjua, Bilal; Ng, Tien Khee; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

    2014-01-01

    A theoretical investigation of AlGaN UV-LED with band engineering of hole and electron blocking layers (HBL and EBL, respectively) was conducted with an aim to improve injection efficiency and reduce efficiency droop in the UV LEDs. The analysis is based on energy band diagrams, carrier distribution and recombination rates (Shockley-Reed-Hall, Auger, and radiative recombination rates) in the quantum well, under equilibrium and forward bias conditions. Electron blocking layer is based on AlaGa1-aN / Al b → cGa1-b → 1-cN / AldGa 1-dN, where a < d < b < c. A graded layer sandwiched between large bandgap AlGaN materials was found to be effective in simultaneously blocking electrons and providing polarization field enhanced carrier injection. The graded interlayer reduces polarization induced band bending and mitigates the related drawback of impediment of holes injection. Similarly on the n-side, the Alx → yGa1-x → 1-yN / AlzGa 1-zN (x < z < y) barrier acts as a hole blocking layer. The reduced carrier leakage and enhanced carrier density in the active region results in significant improvement in radiative recombination rate compared to a structure with the conventional rectangular EBL layers. The improvement in device performance comes from meticulously designing the hole and electron blocking layers to increase carrier injection efficiency. The quantum well based UV-LED was designed to emit at 280nm, which is an effective wavelength for water disinfection application.

  19. A layer-by-layer ZnO nanoparticle-PbS quantum dot self-assembly platform for ultrafast interfacial electron injection

    KAUST Repository

    Eita, Mohamed Samir; Usman, Anwar; El-Ballouli, AlA'A O.; Alarousu, Erkki Antero; Bakr, Osman; Mohammed, Omar F.

    2014-01-01

    solar cell. To achieve sufficient electron transfer and subsequently high conversion efficiency in these solar cells, however, energy-level alignment and interfacial contact between the donor and the acceptor units are needed. Here, the layer-by

  20. Improved electron transport layer

    DEFF Research Database (Denmark)

    2012-01-01

    The present invention provides: a method of preparing a coating ink for forming a zinc oxide electron transport layer, comprising mixing zinc acetate and a wetting agent in water or methanol; a coating ink comprising zinc acetate and a wetting agent in aqueous solution or methanolic solution......; a method of preparing a zinc oxide electron transporting layer, which method comprises: i) coating a substrate with the coating ink of the present invention to form a film; ii) drying the film; and iii) heating the dry film to convert the zinc acetate substantially to ZnO; a method of preparing an organic...... photovoltaic device or an organic LED having a zinc oxide electron transport layer, the method comprising, in this order: a) providing a substrate bearing a first electrode layer; b) forming an electron transport layer according to the following method: i) coating a coating ink comprising an ink according...

  1. Surface tailoring of newly developed amorphous Znsbnd Sisbnd O thin films as electron injection/transport layer by plasma treatment: Application to inverted OLEDs and hybrid solar cells

    Science.gov (United States)

    Yang, Hongsheng; Kim, Junghwan; Yamamoto, Koji; Xing, Xing; Hosono, Hideo

    2018-03-01

    We report a unique amorphous oxide semiconductor Znsbnd Sisbnd O (a-ZSO) which has a small work function of 3.4 eV for as-deposited films. The surface modification of a-ZSO thin films by plasma treatments is examined to apply it to the electron injection/transport layer of organic devices. It turns out that the energy alignment and exciton dissociation efficiency at a-ZSO/organic semiconductor interface significantly changes by choosing different gas (oxygen or argon) for plasma treatments (after a-ZSO was exposed to atmospheric environment for 5 days). In situ ultraviolet photoelectron spectroscopy (UPS) measurement reveals that the work function of a-ZSO is increased to 4.0 eV after an O2-plasma treatment, while the work function of 3.5 eV is recovered after an Ar-plasma treatment which indicates this treatment is effective for surface cleaning. To study the effects of surface treatments to device performance, OLEDs and hybrid polymer solar cells with O2-plasma or Ar-plasma treated a-ZSO are compared. Effects of these surface treatments on performance of inverted OLEDs and hybrid polymer solar cells are examined. Ar-plasma treated a-ZSO works well as the electron injection layer in inverted OLEDs (Alq3/a-ZSO) because the injection barrier is small (∼ 0.1 eV). On the other hands, O2-plasma treated a-ZSO is more suitable for application to hybrid solar cells which is benefiting from higher exciton dissociation efficiency at polymer (P3HT)/ZSO interface.

  2. Highly efficient tandem OLED based on C{sub 60}/rubrene: MoO{sub 3} as charge generation layer and LiF/Al as electron injection layer

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yang [School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384 (China); Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin 300384 (China); Tianjin Key Laboratory of Photoelectric Materials and Devices, Tianjin 300384 (China); College of Science, Tianjin University of Technology, Tianjin 300384 (China); Wu, Xiaoming, E-mail: wxm@tjut.edu.cn [School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384 (China); Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin 300384 (China); Tianjin Key Laboratory of Photoelectric Materials and Devices, Tianjin 300384 (China); Xiao, Zhihui; Gao, Jian; Zhang, Juan; Rui, Hongsong; Lin, Xin; Zhang, Nan; Hua, Yulin [School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384 (China); Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin 300384 (China); Tianjin Key Laboratory of Photoelectric Materials and Devices, Tianjin 300384 (China); Yin, Shougen, E-mail: sgyin@tjut.edu.cn [School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384 (China); Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin 300384 (China); Tianjin Key Laboratory of Photoelectric Materials and Devices, Tianjin 300384 (China)

    2017-08-15

    Highlights: • Highly efficient blue fluorescent tandem OLEDs are fabricated. • The optimal tandem OLED consists of C{sub 60}/rubrene: MoO{sub 3} as a CGL and LiF/Al as an EIL. • Current efficiency and power efficiency of optimal tandem OLED is markedly enhanced. • The turn-on and driving voltages of optimal tandem OLED is obviously reduced. - Abstract: Tandem organic light-emitting diodes (OLEDs) have received much attention in solid-state lighting due to their high current efficiency, long lifetime and excellent stability. The highly efficient blue fluorescent tandem OLEDs based on the charge generation layer (CGL) of C{sub 60}/rubrene: MoO{sub 3} and the electron injection layer (EIL) of LiF/Al were fabricated. The ultra-thin Al layer in EIL was introduced to further increase electron injection from CGL to the emission unit. We found that the maximal current efficiency and power efficiency of optimal tandem device can reach to 43.1 cd/A and 15.1 lm/W, respectively, which are approximately 2.8 and 1.9 times compared with those of single-emissive-unit device. Moreover, compared with the traditional tandem device, the driving voltage of the optimal device is reduced by 6 V, and the turn-on voltage is reduced by 2.4 V. We analyzed the mechanism and characterization of these tandem devices. The effective charge separation and transport of C{sub 60}/rubrene: MoO{sub 3}, and excellent electron injection ability of ultra-thin Al layer are the main factors for the remarkable enhancement in both current efficiency and power efficiency of tandem OLEDs.

  3. Efficient and color-saturated inverted bottom-emitting organic light-emitting devices with a semi-transparent metal-assisted electron injection layer

    Energy Technology Data Exchange (ETDEWEB)

    Ho, Meng-Huan, E-mail: kinneas.ac94g@nctu.edu.t [Department of Applied Chemistry, National Chiao Tung University, 210 R, CPT Building, 1001 Ta Hsueh Road, Hsinchu 300, Taiwan (China); Wu, Chang-Yen [Department of Photonics, National Chiao Tung University, Hsinchu 300, Taiwan (China); Chen, Teng-Ming [Department of Applied Chemistry, National Chiao Tung University, 210 R, CPT Building, 1001 Ta Hsueh Road, Hsinchu 300, Taiwan (China); Chen, Chin H. [Display Institute, Microelectronics and Information Systems Research Center, National Chiao Tung University, Hsinchu 300, Taiwan (China)

    2011-01-15

    We report the development of highly efficient and color-saturated green fluorescent 10-(2-benzothiazolyl)-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H, 11H-benzo[l]pyrano-[6,7,8-ij]quinolizin-11-one dye-doped inverted bottom-emitting organic light-emitting diode (IBOLED). This was enabled by the insertion of a silver (Ag) based semi-transparent metal-assisted electron injection layer between the ITO cathode and n-doped electron transporting layer. This IBOLED with ITO/Ag bilayer cathode with its synergistic microcavity effect achieved luminous efficiencies of 20.7 cd/A and 12.4 lm/W and a saturated CIE{sub x,y} of (0.22, 0.72) at 20 mA/cm{sup 2}, which are twice better than those of the conventional OLED and have over 60% improvement on IBOLED without ITO/Ag bilayer cathode.

  4. Organic Light-Emitting Diodes with Magnesium Doped CuPc as an Efficient Electron Injection Layer

    International Nuclear Information System (INIS)

    Jun-Song, Cao; Min, Guan; Guo-Hua, Cao; Yi-Ping, Zeng; Jin-Min, Li; Da-Shan, Qin

    2008-01-01

    Bright organic electroluminescent devices are developed using a metal-doped organic layer intervening between the cathode and the emitting layer. The typical device structure is a glass substrate/indium-tin oxide (ITO)/copper phthalocyanine(CuPc)/N,N-bis-(1-naphthl)-diphenyl-1, 1'-biphenyl-4,4'-diamine (NPB)/Tris(8-quinolinolato) alu-minum(Alq 3 )/Mg-doped CuPc/Ag. At a driving voltage of 11 V, the device with a layer of Mg-doped CuPc (1:2 in weight) shows a brightness of 4312 cd/m 2 and a current efficiency of 2.52 cd/A, while the reference device exhibits 514 cd/m 2 and 1.25 cd/A

  5. Injection into electron plasma traps

    International Nuclear Information System (INIS)

    Gorgadze, Vladimir; Pasquini, Thomas A.; Fajans, Joel; Wurtele, Jonathan S.

    2003-01-01

    Computational studies and experimental measurements of plasma injection into a Malmberg-Penning trap reveal that the number of trapped particles can be an order of magnitude higher than predicted by a simple estimates based on a ballistic trapping model. Enhanced trapping is associated with a rich nonlinear dynamics generated by the space-charge forces of the evolving trapped electron density. A particle-in-cell simulation is used to identify the physical mechanisms that lead to the increase in trapped electrons. The simulations initially show strong two-stream interactions between the electrons emitted from the cathode and those reflected off the end plug of the trap. This is followed by virtual cathode oscillations near the injection region. As electrons are trapped, the initially hollow longitudinal phase-space is filled, and the transverse radial density profile evolves so that the plasma potential matches that of the cathode. Simple theoretical arguments are given that describe the different dynamical regimes. Good agreement is found between simulation and theory

  6. Diffusive scattering of electrons by electron holes around injection fronts

    Science.gov (United States)

    Vasko, I. Y.; Agapitov, O. V.; Mozer, F. S.; Artemyev, A. V.; Krasnoselskikh, V. V.; Bonnell, J. W.

    2017-03-01

    Van Allen Probes have detected nonlinear electrostatic spikes around injection fronts in the outer radiation belt. These spikes include electron holes (EH), double layers, and more complicated solitary waves. We show that EHs can efficiently scatter electrons due to their substantial transverse electric fields. Although the electron scattering driven by EHs is diffusive, it cannot be evaluated via the standard quasi-linear theory. We derive analytical formulas describing local electron scattering by a single EH and verify them via test particle simulations. We show that the most efficiently scattered are gyroresonant electrons (crossing EH on a time scale comparable to the local electron gyroperiod). We compute bounce-averaged diffusion coefficients and demonstrate their dependence on the EH spatial distribution (latitudinal extent and spatial filling factor) and individual EH parameters (amplitude of electrostatic potential, velocity, and spatial scales). We show that EHs can drive pitch angle scattering of ≲5 keV electrons at rates 10-2-10-4 s-1 and, hence, can contribute to electron losses and conjugated diffuse aurora brightenings. The momentum and pitch angle scattering rates can be comparable, so that EHs can also provide efficient electron heating. The scattering rates driven by EHs at L shells L ˜ 5-8 are comparable to those due to chorus waves and may exceed those due to electron cyclotron harmonics.

  7. Tunneling spin injection into single layer graphene.

    Science.gov (United States)

    Han, Wei; Pi, K; McCreary, K M; Li, Yan; Wong, Jared J I; Swartz, A G; Kawakami, R K

    2010-10-15

    We achieve tunneling spin injection from Co into single layer graphene (SLG) using TiO₂ seeded MgO barriers. A nonlocal magnetoresistance (ΔR(NL)) of 130  Ω is observed at room temperature, which is the largest value observed in any material. Investigating ΔR(NL) vs SLG conductivity from the transparent to the tunneling contact regimes demonstrates the contrasting behaviors predicted by the drift-diffusion theory of spin transport. Furthermore, tunnel barriers reduce the contact-induced spin relaxation and are therefore important for future investigations of spin relaxation in graphene.

  8. Performance Enhancement of Organic Light-Emitting Diodes Using Electron-Injection Materials of Metal Carbonates

    Science.gov (United States)

    Shin, Jong-Yeol; Kim, Tae Wan; Kim, Gwi-Yeol; Lee, Su-Min; Shrestha, Bhanu; Hong, Jin-Woong

    2016-05-01

    Performance of organic light-emitting diodes was investigated depending on the electron-injection materials of metal carbonates (Li2CO3 and Cs2CO3 ); and number of layers. In order to improve the device efficiency, two types of devices were manufactured by using the hole-injection material (Teflon-amorphous fluoropolymer -AF) and electron-injection materials; one is a two-layer reference device ( ITO/Teflon-AF/Alq3/Al ) and the other is a three-layer device (ITO/Teflon-AF/Alq3/metal carbonate/Al). From the results of the efficiency for the devices with hole-injection layer and electron-injection layer, it was found that the electron-injection layer affects the electrical properties of the device more than the hole-injection layer. The external-quantum efficiency for the three-layer device with Li2CO3 and Cs2CO3 layer is improved by approximately six and eight times, respectively, compared with that of the two-layer reference device. It is thought that a use of electron-injection layer increases recombination rate of charge carriers by the active injection of electrons and the blocking of holes.

  9. High-performance flexible inverted organic light-emitting diodes by exploiting MoS2 nanopillar arrays as electron-injecting and light-coupling layers.

    Science.gov (United States)

    Guo, Kunping; Si, Changfeng; Han, Ceng; Pan, Saihu; Chen, Guo; Zheng, Yanqiong; Zhu, Wenqing; Zhang, Jianhua; Sun, Chang; Wei, Bin

    2017-10-05

    Inverted organic light-emitting diodes (IOLEDs) on plastic substrates have great potential application in flexible active-matrix displays. High energy consumption, instability and poor electron injection are key issues limiting the commercialization of flexible IOLEDs. Here, we have systematically investigated the electrooptical properties of molybdenum disulfide (MoS 2 ) and applied it in developing highly efficient and stable blue fluorescent IOLEDs. We have demonstrated that MoS 2 -based IOLEDs can significantly improve electron-injecting capacity. For the MoS 2 -based device on plastic substrates, we have achieved a very high external quantum efficiency of 7.3% at the luminance of 9141 cd m -2 , which is the highest among the flexible blue fluorescent IOLEDs reported. Also, an approximately 1.8-fold improvement in power efficiency was obtained compared to glass-based IOLEDs. We attributed the enhanced performance of flexible IOLEDs to MoS 2 nanopillar arrays due to their light extraction effect. The van der Waals force played an important role in the formation of MoS 2 nanopillar arrays by thermal evaporation. Notably, MoS 2 -based flexible IOLEDs exhibit an intriguing efficiency roll-up, that is, the current efficiency increases slightly from 14.0 to 14.6 cd A -1 with the luminance increasing from 100 to 5000 cd m -2 . In addition, we observed that the initial brightness of 500 cd m -2 can be maintained at 97% after bending for 500 cycles, demonstrating the excellent mechanical stability of flexible IOLEDs. Furthermore, we have successfully fabricated a transparent, flexible IOLED with low efficiency roll-off at high current density.

  10. Electron injection in semiconductor drift detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.; Longoni, A.; Sampietro, M.; Castoldi, A.; Vacchi, A.

    1990-01-01

    The paper reports the first successful results of a simple MOS structure to inject electrons at a given position in Silicon Drift Detectors. The structure allows on-line calibration of the drift velocity of electrons within the detector. The calibration is a practical method to trace the temperature dependence of the electron mobility. Several of these injection structures can be implemented in silicon drift detectors without additional steps in the fabrication process. 5 refs., 11 figs

  11. Advanced diesel electronic fuel injection and turbocharging

    Science.gov (United States)

    Beck, N. J.; Barkhimer, R. L.; Steinmeyer, D. C.; Kelly, J. E.

    1993-12-01

    The program investigated advanced diesel air charging and fuel injection systems to improve specific power, fuel economy, noise, exhaust emissions, and cold startability. The techniques explored included variable fuel injection rate shaping, variable injection timing, full-authority electronic engine control, turbo-compound cooling, regenerative air circulation as a cold start aid, and variable geometry turbocharging. A Servojet electronic fuel injection system was designed and manufactured for the Cummins VTA-903 engine. A special Servojet twin turbocharger exhaust system was also installed. A series of high speed combustion flame photos was taken using the single cylinder optical engine at Michigan Technological University. Various fuel injection rate shapes and nozzle configurations were evaluated. Single-cylinder bench tests were performed to evaluate regenerative inlet air heating techniques as an aid to cold starting. An exhaust-driven axial cooling air fan was manufactured and tested on the VTA-903 engine.

  12. Theoretical Studies of Electron Injection and E-Layer Build-Up in Astron; Etudes Theoriques sur l'Injection d'Electrons et la Formation de la Couche E dans l'Astron; Teoreticheskie izucheniya ehlektronnoj inzhektsii i narashchivaniya sloya-E v ustanovke ''Astron''; Estudios Teoricos de Electrones y Formacion de la Capa E en la Instalacion Astron

    Energy Technology Data Exchange (ETDEWEB)

    Killeen, J.; Neil, V. K.; Heckrotte, W. [Lawrence Radiation Laboratory, Livermore, CA (United States)

    1966-04-15

    High intensity beams of relativistic electrons injected into the Astron device can be trapped in part by the action of coherent electromagnetic self-forces. Through the appropriate design of external passive circuitry, axial electrostatic blow-up of the azimuthally injected beam can be prevented or inhibited. The self-forces result in a spread of particles in z-P{sub z} phase space, and part of the beam is trapped at the expense of the loss of the rest. In addition to this effect, for sufficiently high beam currents, the coupling of the relativistic beam to the passive circuitry can lead to significant loss of axial momentum through energy dissipation. A one-dimensional model of the actual Astron geometry has been investigated theoretically. Green's functions for the self-electric and self-magnetic fields have been calculated analytically and incorporated into the Vlasov equation governing the axial motion of the electrons. Results of the calculation allow some qualitative comparison with experimental results from the Astron experiment. As envisioned, the trapped electrons will form a cylindrical layer of sufficient intensity so that the self-magnetic field is comparable to the applied field. The mathematical model for the build-up of the electron layer and the self-field is the time-dependent Vlasov equation coupled with Maxwell's equations. The system is axially symmetric and complete neutralization is assumed. The field components Br and B{sub z} can be derived from a stream function {psi}( r, z, t). The canonical angular momentum is a constant of the motion, hence we can consider an electron distribution function f{sub e}( r, z, P{sub r}, P{sub z}). The partial differential equations for f{sub e} and {psi} are solved numerically by using finite difference methods. The phase space consists of over 160 000 points, that is 81 in z, 12 in r, 19 in P{sub z} and 9 in P{sub r}. At each step an integration of f{sub e} over momentum space yields the current density j

  13. Optoelectronic device with nanoparticle embedded hole injection/transport layer

    Science.gov (United States)

    Wang, Qingwu [Chelmsford, MA; Li, Wenguang [Andover, MA; Jiang, Hua [Methuen, MA

    2012-01-03

    An optoelectronic device is disclosed that can function as an emitter of optical radiation, such as a light-emitting diode (LED), or as a photovoltaic (PV) device that can be used to convert optical radiation into electrical current, such as a photovoltaic solar cell. The optoelectronic device comprises an anode, a hole injection/transport layer, an active layer, and a cathode, where the hole injection/transport layer includes transparent conductive nanoparticles in a hole transport material.

  14. Electron injection in diodes with field emission

    International Nuclear Information System (INIS)

    Denavit, J.; Strobel, G.L.

    1986-01-01

    This paper presents self-consistent steady-state solutions of the space charge, transmitted current, and return currents in diodes with electron injection from the cathode and unlimited field emission of electrons and ions from both electrodes. Time-dependent particle simulations of the diode operation confirm the analytical results and show how these steady states are reached. The results are applicable to thermionic diodes and to photodiodes

  15. Microparticle injection effects on microwave transmission through an overly dense plasma layer

    Energy Technology Data Exchange (ETDEWEB)

    Gillman, Eric D., E-mail: eric.gillman@nrl.navy.mil; Amatucci, W. E. [Naval Research Laboratory, Washington, DC 20375 (United States); Williams, Jeremiah [Wittenberg University, Springfield, Ohio 45501 (United States); Compton, C. S. [Sotera Defense Solutions, Herndon, Virginia 20171 (United States)

    2015-04-15

    Microparticles injected into a plasma have been shown to deplete the free electron population as electrons are collected through the process of microparticles charging to the plasma floating potential. However, these charged microparticles can also act to scatter electromagnetic signals. These experiments investigate microwave penetration through a previously impenetrable overly dense plasma layer as microparticles are injected and the physical phenomena associated with the competing processes that occur due to electron depletion and microwave scattering. The timescales for when each of these competing processes dominates is analyzed in detail. It was found that while both processes play a significant and dominant role at different times, ultimately, transmission through this impenetrable plasma layer can be significantly increased with microparticle injection.

  16. Improved organic light-emitting device with tris-(8-hydroxyquinoline) aluminium inserted between hole-injection layer and hole-transporting layer

    Energy Technology Data Exchange (ETDEWEB)

    Divayana, Y [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore (Singapore); Sun, X W [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore (Singapore); Chen, B J [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore (Singapore); Sarma, K R [Aerospace Electronic Systems, Honeywell, 21111 N 19th Avenue, Phoenix, AZ 85027 (United States)

    2007-01-07

    A layer of tris-(8-hydroxyquinoline) aluminium (Alq{sub 3}), which is normally used as an electron-transporting and emissive layer, was incorporated between the hole-transporting layer and the hole-injection layer to balance the electron-hole injection. The Alq{sub 3} layer performed to block the hole current which is a majority carrier in a typical organic light-emitting device. An increase in current efficiency by almost 30%, from 3.1 to 4.0 cd A{sup -1}, with a minimum voltage shift was achieved with a 2 nm Alq{sub 3} layer as a hole-blocking layer. A reduction in HTL thickness was observed to reduce the efficiency due to electron leakage to the HIL, whereby an inefficient exciplex emission was observed.

  17. Injection into the LNLS UVX electron storage ring

    International Nuclear Information System (INIS)

    Lin, Liu

    1991-01-01

    To inject the 1.15 GeV electron storage ring - UVX - a beam from a linear accelerator - MAIRA - is used. The electrons are injected and accumulated at low energy (100MeV) until the nominal current of 100 mA is reached and than are ramped to the nominal energy. A study on a conventional injection scheme has been carried out. Two injection modes are investigated: injection with the phase ellipse parameters matched and mismatched to the ring's acceptance. The mismatched mode is optimized to fit the maximum of the injected beam into the acceptance

  18. Energetic Electron Acceleration, Injection, and Transport in Mercury's Magnetosphere

    Science.gov (United States)

    Dewey, R. M.; Slavin, J. A.; Raines, J. M.; Baker, D. N.; Lawrence, D. J.

    2018-05-01

    Electrons are accelerated in Mercury’s magnetotail by dipolarization events, flux ropes, and magnetic reconnection directly. Following energization, these electrons are injected close to Mercury where they drift eastward in Shabansky-like orbits.

  19. Counting graphene layers with very slow electrons

    Energy Technology Data Exchange (ETDEWEB)

    Frank, Ludĕk; Mikmeková, Eliška; Müllerová, Ilona [Institute of Scientific Instruments AS CR, v.v.i., Královopolská 147, 61264 Brno (Czech Republic); Lejeune, Michaël [Laboratoire de Physique de la Matière Condensée, Faculté des Sciences d' Amiens, Universite de Picardie Jules Verne, 33 rue Saint Leu, 80039 Amiens Cedex 2 (France)

    2015-01-05

    The study aimed at collection of data regarding the transmissivity of freestanding graphene for electrons across their full energy scale down to the lowest energies. Here, we show that the electron transmissivity of graphene drops with the decreasing energy of the electrons and remains below 10% for energies below 30 eV, and that the slow electron transmissivity value is suitable for reliable determination of the number of graphene layers. Moreover, electrons incident below 50 eV release adsorbed hydrocarbon molecules and effectively clean graphene in contrast to faster electrons that decompose these molecules and create carbonaceous contamination.

  20. Carbazole/triarylamine based polymers as a hole injection/transport layer in organic light emitting devices.

    Science.gov (United States)

    Wang, Hui; Ryu, Jeong-Tak; Kwon, Younghwan

    2012-05-01

    This study examined the influence of the charge injection barriers on the performance of organic light emitting diodes (OLEDs) using polymers with a stepwise tuned ionization potential (I(p) approximately -5.01 - -5.29 eV) between the indium tin oxide (ITO) (phi approximately -4.8 eV) anode and tris(8-hydroxyquinolinato) aluminium (Alq3) (I(p) approximately -5.7 eV) layer. The energy levels of the polymers were tuned by structural modification. Double layer devices were fabricated with a configuration of ITO/polymer/Alq3/LiF/Al, where the polymers, Alq3, and LiF/Al were used as the hole injection/transport layer, emissive electron transport layer, and electron injection/cathode, respectively. Using the current density-voltage (J-V), luminescence-voltage (L-V) and efficiencies in these double layer devices, the device performance was evaluated in terms of the energy level alignments at the interfaces, such as the hole injection barriers (phi(h)(iTO/polymer) and phi(h)(polymer/Alq3)) from ITO through the polymers into the Alq3 layer, and the electron injection barrier (phi(e)(polymer/Alq3) or electron/exciton blocking barrier) at the polymer/Alq3 interface.

  1. On the AlxGa1-xN/AlyGa1-yN/AlxGa1-xN (x>y) p-electron blocking layer to improve the hole injection for AlGaN based deep ultraviolet light-emitting diodes

    Science.gov (United States)

    Chu, Chunshuang; Tian, Kangkai; Fang, Mengqian; Zhang, Yonghui; Li, Luping; Bi, Wengang; Zhang, Zi-Hui

    2018-01-01

    This work proposes the [0001] oriented AlGaN-based deep ultraviolet (DUV) light-emitting diode (LED) possessing a specifically designed p-electron blocking layer (p-EBL) to achieve the high internal quantum efficiency. Both electrons and holes can be efficiently injected into the active region by adopting the Al0.60Ga0.40N/Al0.50Ga0.50N/Al0.60Ga0.40N structured p-EBL, in which a p-Al0.50Ga0.50N layer is embedded into the p-EBL. Moreover, the impact of different thicknesses for the p-Al0.50Ga0.50N insertion layer on the hole and electron injections has also been investigated. Compared with the DUV LED with the bulk p-Al0.60Ga0.40N as the EBL, the proposed LED architectures improve the light output power if the thickness of the p-Al0.50Ga0.50N insertion layer is properly designed.

  2. Electroluminescence from porous silicon due to electron injection from solution

    NARCIS (Netherlands)

    Kooij, Ernst S.; Despo, R.W.; Kelly, J.J.

    1995-01-01

    We report on the electroluminescence from p‐type porous silicon due to minority carrier injection from an electrolyte solution. The MV+• radical cation formed in the reduction of divalent methylviologen is able to inject electrons into the conduction band of crystalline and porous silicon. The

  3. Electron self-injection in the donut bubble wakefield

    Science.gov (United States)

    Firouzjaei, Ali Shekari; Shokri, Babak

    2018-05-01

    We investigate electron self-injection in a donut bubble wakefield driven by a Laguerre-Gauss laser pulse. The present work discusses the electron capture by modeling the analytical donut bubble field. We discuss the self-injection of the electrons from plasma for various initial conditions and then compare the results. We show that the donut bubble can trap plasma electrons forming a hollow beam. We present the phase spaces and longitudinal momentum evolution for the trapped electrons in the bubble and discuss their characteristic behaviors and stability. It will be shown that the electrons self-injected in the front are ideal for applications in which a good stability and low energy spread are essential.

  4. Giant tunnel-electron injection in nitrogen-doped graphene

    DEFF Research Database (Denmark)

    Lagoute, Jerome; Joucken, Frederic; Repain, Vincent

    2015-01-01

    Scanning tunneling microscopy experiments have been performed to measure the local electron injection in nitrogen-doped graphene on SiC(000) and were successfully compared to ab initio calculations. In graphene, a gaplike feature is measured around the Fermi level due to a phonon-mediated tunneling...... and at carbon sites. Nitrogen doping can therefore be proposed as a way to improve tunnel-electron injection in graphene....

  5. Pseudorandom binary injection of levitons for electron quantum optics

    Science.gov (United States)

    Glattli, D. C.; Roulleau, P.

    2018-03-01

    The recent realization of single-electron sources lets us envision performing electron quantum optics experiments, where electrons can be viewed as flying qubits propagating in a ballistic conductor. To date, all electron sources operate in a periodic electron injection mode, leading to energy spectrum singularities in various physical observables which sometimes hide the bare nature of physical effects. To go beyond this, we propose a spread-spectrum approach where electron flying qubits are injected in a nonperiodic manner following a pseudorandom binary bit pattern. Extending the Floquet scattering theory approach from periodic to spread-spectrum drive, the shot noise of pseudorandom binary sequences of single-electron injection can be calculated for leviton and nonleviton sources. Our new approach allows us to disentangle the physics of the manipulated excitations from that of the injection protocol. In particular, the spread-spectrum approach is shown to provide better knowledge of electronic Hong-Ou-Mandel correlations and to clarify the nature of the pulse train coherence and the role of the dynamical orthogonality catastrophe for noninteger charge injection.

  6. Electron injection by evolution of self-modulated laser wakefields

    International Nuclear Information System (INIS)

    Kim, Changbum; Kim, Guang-Hoon; Kim, Jong-Uk; Lee, Hae June; Suk, Hyyong; Ko, In Soo

    2003-01-01

    Self-injection mechanisms in the self-modulated laser wakefield acceleration (SM-LWFA) are investigated. Two-dimensional (2D) particle-in-cell (PIC) simulations show that a significant amount of plasma electrons can be self-injected into the acceleration phase of a laser wakefield by a dynamic increase in the wake wavelength in the longitudinal direction. In this process, it is found that the wake wavelength increases due to the relativistic effect and this leads to a large amount of electron injection into the wakefields. In this paper, the injection phenomena are studied with 2D simulations and a brief explanation of the new self-injection mechanism is presented. (author)

  7. Improvement of tokamak performance by injection of electrons

    International Nuclear Information System (INIS)

    Ono, Masayuki.

    1992-12-01

    Concepts for improving tokamak performance by utilizing injection of hot electrons are discussed. Motivation of this paper is to introduce the research work being performed in this area and to refer the interested readers to the literature for more detail. The electron injection based concepts presented here have been developed in the CDX, CCT, and CDX-U tokamak facilities. The following three promising application areas of electron injection are described here: 1. Non-inductive current drive, 2. Plasma preionization for tokamak start-up assist, and 3. Charging-up of tokamak flux surfaces for improved plasma confinement. The main motivation for the dc-helicity injection current drive is in its efficiency that, in theory, is independent of plasma density. This property makes it attractive for driving currents in high density reactor plasmas

  8. Counting graphene layers with very slow electrons

    Czech Academy of Sciences Publication Activity Database

    Frank, Luděk; Mikmeková, Eliška; Müllerová, Ilona; Lejeune, M.

    2015-01-01

    Roč. 106, 09 JAN (2015), 013117:1-5 ISSN 0003-6951 R&D Projects: GA TA ČR(CZ) TE01020118; GA MŠk(CZ) LO1212 Institutional support: RVO:68081731 Keywords : graphene * ultralow energy STEM * counting graphene layers * clean ing of graphene * 2D crystals Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 3.142, year: 2015

  9. Ordered conducting polymer multilayer films and its application for hole injection layers in organic light-emitting devices

    International Nuclear Information System (INIS)

    Xu Jianhua; Yang Yajie; Yu Junsheng; Jiang Yadong

    2009-01-01

    We reported a controlled architecture growth of layer-ordered multilayer film of poly(3,4-ethylene dioxythiophene) (PEDOT) via a modified Langmuir-Blodgett (LB) method. An in situ polymerization of 3,4-ethylene dioxythiophene (EDOT) monomer in multilayer LB film occurred for the formation of ordered conducting polymer embedded multilayer film. The well-distribution of conducting polymer particles was characterized by secondary-ion mass spectrometry (SIMS). The conducting film consisting of ordered PEDOT ultrathin layers was investigated as a hole injection layer for organic light-emitting diodes (OLEDs). The results showed that, compared to conventional spin-coating PEDOT film and electrostatic self-assembly (ESA) film, the improved performance of OLEDs was obtained after using ordered PEDOT LB film as hole injection layer. It also indicated that well-ordered structure of hole injection layer was attributed to the improvement of OLED performance, leading to the increase of charged carrier mobility in hole injection layer and the recombination rate of electrons and holes in the electroluminescent layer.

  10. Efficient Injection of Electron Beams into Magnetic Guide Fields

    International Nuclear Information System (INIS)

    Chorny, V.; Cooperstein, G.; Dubyna, V.; Frolov, O.; Harper-Slaboszewicz, V.; Hinshelwood, D.; Schneider, R.; Solovyov, V.; Tsepilov, H.; Vitkovitsky, I.; Ware, K.

    1999-01-01

    Preliminary experimental and modeling study of injection and transport of high current electron beams in current-neutralized background gas has been performed. Initial analysis of the results indicates that high current triaxial ring diode operates very reproducibly in the pinch mode. High current density beam can be injected efficiently into the drift region, using azimuthal guide field with reduced intensity near the injection region. This was shown to improve the effectiveness of capturing the beam for the transport. The transport length was insufficient to measure losses, such as would arise from scattering with the background gas

  11. Nonadiabatic dynamics of electron injection into organic molecules

    International Nuclear Information System (INIS)

    Zhu Li-Ping; Qiu Yu; Tong Guo-Ping

    2012-01-01

    We numerically investigate the injection process of electrons from metal electrodes to one-dimensional organic molecules by combining the extended Su—Schrieffer—Heeger (SSH) model with a nonadiabatic dynamics method. It is found that a match between the Fermi level of electrodes and the highest occupied molecular orbital (HOMO) or the lowest unoccupied molecular orbital (LUMO) of organic molecules can be greatly affected by the length of the organic chains, which has a great impact on electron injection. The correlation between oligomers and electrodes is found to open more efficient channels for electron injection as compared with that in polymer/electrode structures. For oligomer/electrode structures, we show that the Schottky barrier essentially does not affect the electron injection as the electrode work function is smaller than a critical value. This means that the Schottky barrier is pinned for a small work-function electrode. For polymer/electrode structures, we find that it is possible for the Fermi level of electrodes to be pinned to the polaronic level. The condition under which the Fermi level of electrodes exceeds the polaronic level of polymers is shown to not always lead to spontaneous electron transfer from electrodes to polymers. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  12. Electron beam injection during active experiments. I - Electromagnetic wave emissions

    Science.gov (United States)

    Winglee, R. M.; Kellogg, P. J.

    1990-01-01

    The wave emissions produced in Echo 7 experiment by active injections of electron beams were investigated to determine the properties of the electromagnetic and electrostatic fields for both the field-aligned and cross-field injection in such experiments and to evaluate the sources of free energy and relative efficiencies for the generation of the VLF and HF emissions. It is shown that, for typical beam energies in active experiments, electromagnetic effects do not substantially change the bulk properties of the beam, spacecraft charging, and plasma particle acceleration. Through simulations, beam-generated whistlers; fundamental z-mode and harmonic x-mode radiation; and electrostatic electron-cyclotron, upper-hybrid, Langmuir, and lower-hybrid waves were identified. The characteristics of the observed wave spectra were found to be sensitive to both the ratio of the electron plasma frequency to the cyclotron frequency and the angle of injection relative to the magnetic field.

  13. Electron injection dynamics in high-potential porphyrin photoanodes.

    Science.gov (United States)

    Milot, Rebecca L; Schmuttenmaer, Charles A

    2015-05-19

    There is a growing need to utilize carbon neutral energy sources, and it is well known that solar energy can easily satisfy all of humanity's requirements. In order to make solar energy a viable alternative to fossil fuels, the problem of intermittency must be solved. Batteries and supercapacitors are an area of active research, but they currently have relatively low energy-to-mass storage capacity. An alternative and very promising possibility is to store energy in chemical bonds, or make a solar fuel. The process of making solar fuel is not new, since photosynthesis has been occurring on earth for about 3 billion years. In order to produce any fuel, protons and electrons must be harvested from a species in its oxidized form. Photosynthesis uses the only viable source of electrons and protons on the scale needed for global energy demands: water. Because artificial photosynthesis is a lofty goal, water oxidation, which is a crucial step in the process, has been the initial focus. This Account provides an overview of how terahertz spectroscopy is used to study electron injection, highlights trends from previously published reports, and concludes with a future outlook. It begins by exploring similarities and differences between dye-sensitized solar cells (DSSCs) for producing electricity and a putative device for splitting water and producing a solar fuel. It then identifies two important problems encountered when adapting DSSC technology to water oxidation-improper energy matching between sensitizer energy levels with the potential for water oxidation and the instability of common anchoring groups in water-and discusses steps to address them. Emphasis is placed on electron injection from sensitizers to metal oxides because this process is the initial step in charge transport. Both the rate and efficiency of electron injection are analyzed on a sub-picosecond time scale using time-resolved terahertz spectroscopy (TRTS). Bio-inspired pentafluorophenyl porphyrins are

  14. Buffer layers and articles for electronic devices

    Science.gov (United States)

    Paranthaman, Mariappan P.; Aytug, Tolga; Christen, David K.; Feenstra, Roeland; Goyal, Amit

    2004-07-20

    Materials for depositing buffer layers on biaxially textured and untextured metallic and metal oxide substrates for use in the manufacture of superconducting and other electronic articles comprise RMnO.sub.3, R.sub.1-x A.sub.x MnO.sub.3, and combinations thereof; wherein R includes an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Y, and A includes an element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Ra.

  15. Efficient scattering of electrons below few keV by Time Domain Structures around injection fronts

    Science.gov (United States)

    Vasko, I.; Agapitov, O. V.; Mozer, F.; Artemyev, A.; Krasnoselskikh, V.

    2016-12-01

    Van Allen Probes observations show an abundance of non-linear large-amplitude electrostatic spikes around injection fronts in the outer radiation belt. These spikes referred to as Time Domain Structures (TDS) include electron holes, double layers and more complicated solitary waves. The electron scattering driven by TDS may not be evaluated via the standard quasi-linear theory, since TDS are in principle non-linear plasma modes. In this paper we analyze the scattering of electrons by three-dimensional TDS (with non-negligible perpendicular electric field) around injection fronts. We derive the analytical formulas describing the local scattering by single TDS and show that the most efficiently scattered electrons are those in the first cyclotron resonance (electrons crossing TDS on a time scale comparable with their gyroperiod). The analytical formulas are verified via the test-particle simulation. We compute the bounce-averaged diffusion coefficients and demonstrate their dependence on the TDS spatial distribution, individual TDS parameters and L shell. We show that TDS are able to provide the pitch-angle scattering of <5 keV electrons at rate 10-2-10-4 s-1 and, thus, can be responsible for driving loss of electrons out of injections fronts on a time scale from few minutes to few hours. TDS can be, thus, responsible for driving diffuse aurora precipitations conjugated to injection fronts. We show that the pitch-angle scattering rates driven by TDS are comparable with those due to chorus waves and exceed those due to electron cyclotron harmonics. For injections fronts with no significant wave activity in the frequency range corresponding to chorus waves, TDS can be even dominant mechanism for losses of below few keV electrons.

  16. MODELING OF ELECTRONIC GASOLINE INJECTION PROCESSES IN TWO STROKE ENGINE

    Directory of Open Access Journals (Sweden)

    Hraivoronskyi, Y.

    2013-06-01

    Full Text Available Basic provision of the processes developed mode, occurring in ignition fuel system with electronically controlled two stroke engine with positive ignition are given. Fuel injection process’ calculation results for the case of placing fuel injector into intake system presented.

  17. Improving Charge Injection in Organic Electronic Devices Using Self-Assembled Monolayers

    Science.gov (United States)

    Campbell, I. H.; Kress, J. D.; Martin, R. L.; Smith, D. L.; Barashkov, N. N.; Ferraris, J. P.

    1997-03-01

    Organic electronic devices consist of one or more insulating organic layers contacted by metallic conductors. The Schottky energy barrier between the metal and the organic material is determined by the work function of the metal contact as described in the ideal Schottky model. The magnitude of the metal/organic Schottky energy barrier controls charge injection from the metal into the organic layer. Previously, polar alkane-thiol based self-assembled monolayers (SAMs) were used to change the Schottky energy barrier between the metal and an organic film by more than 1 eV. In these SAMs, the large energy gap of the alkane molecules blocks charge injection into the organic layer despite the decrease of the Schottky energy barrier. Here, we demonstrate improved charge injection into the organic material by using conjugated self-assembled monolayers. The conjugated SAMs have modest energy gaps which allow improved charge injection into the organic layer. We present measurements of current-voltage characteristics and metal/organic Schottky energy barriers for device structures both with and without conjugated SAMs.

  18. Rocket potential measurements during electron beam injection into the ionosphere

    International Nuclear Information System (INIS)

    Gringauz, K.I.; Shutte, N.M.

    1981-01-01

    Electron flux measurements were made during pulsed injection of electron beams at a current of about 0.5 A and energy of 15 or 27 keV, using a retarding potential analyzer which was mounted on the lateral surface of the Eridan rocket during the ARAKS experiment of January 26, 1975. The general character of the retardation curves was found to be the same regardless of the electron injection energy, and regardless of the fact whether the plasma generator, injecting quasineutral cesium plasma with an ion current of about 10 A, was switched on. A sharp current increase in the interval between 10 to the -7th and 10 to the -6th A was observed with a decrease of the retarding potential. The rocket potential did not exceed approximately 150 V at about 130 to 190 km, and decreased to 20 V near 100 km. This was explained by the formation of a highly conducting region near the rocket, which was formed via intense plasma waves generated by the beam. Measurements of electron fluxes with energies of 1 to 3 keV agree well with estimates based on the beam plasma discharge theory

  19. Vibrational excitations in molecular layers probed by ballistic electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Kajen, Rasanayagam Sivasayan; Chandrasekhar, Natarajan [Institute of Materials Research and Engineering, 3 Research Link, 117602 (Singapore); Feng Xinliang; Muellen, Klaus [Max-Planck-Institut fuer Polymerforschung, Postfach 3148, D-55021 Mainz (Germany); Su Haibin, E-mail: n-chandra@imre.a-star.edu.sg, E-mail: muellen@mpip-mainz.mpg.de, E-mail: hbsu@ntu.edu.sg [Division of Materials Science, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore)

    2011-10-28

    We demonstrate the information on molecular vibrational modes via the second derivative (d{sup 2}I{sub B}/dV{sup 2}) of the ballistic electron emission spectroscopy (BEES) current. The proposed method does not create huge fields as in the case of conventional derivative spectroscopy and maintains a zero bias across the device. BEES studies carried out on three different types of large polycyclic aromatic hydrocarbon (PAH) molecular layers show that the d{sup 2}I{sub B}/dV{sup 2} spectra consist of uniformly spaced peaks corresponding to vibronic excitations. The peak spacing is found to be identical for molecules within the same PAH family though the BEES onset voltage varies for different molecules. In addition, injection into a particular orbital appears to correspond to a specific vibrational mode as the manifestation of the symmetry principle.

  20. Injection, compression and confinement of electrons in a magnetic mirror

    International Nuclear Information System (INIS)

    Fisher, A.

    1975-01-01

    A Helmholtz coil configuration has been constructed where the magnetic field can be increased to about 10 kGauss in 20 μsec. Electrons are injected from a hot tantalum filament between two plates across which a potential of about 5 keV is applied. The electric field E is perpendicular to the magnetic field B so that the direction of the E x B drift is radial--into the magnetic mirror. About 10 14 electrons were injected and about 10 13 electrons were trapped. The initial electron energy was about 5 keV and after compression 500 keV x-rays were observed. The confinement time is very sensitive to vacuum. Confinement times of milliseconds and good compression were observed at vacuum of 5.10 -5 torr or less. Above 5.10 -5 torr there was no trapping or compression. After a compressed ring of electrons was formed, it was released by a pulse applied to one of the Helmholtz coils that reduced the field. Ejection of the electron ring was observed by x-ray measurements

  1. Role of the inversion layer on the charge injection in silicon nanocrystal multilayered light emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Tondini, S. [Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, 38123 Trento (Italy); Dipartimento di Fisica, Informatica e Matematica, Università di Modena e Reggio Emilia, Via Campi 213/a, 41125 Modena (Italy); Pucker, G. [Advanced Photonics and Photovoltaics Group, Bruno Kessler Foundation, Via Sommarive 18, 38123 Trento (Italy); Pavesi, L. [Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, 38123 Trento (Italy)

    2016-09-07

    The role of the inversion layer on injection and recombination phenomena in light emitting diodes (LEDs) is here studied on a multilayer (ML) structure of silicon nanocrystals (Si-NCs) embedded in SiO{sub 2}. Two Si-NC LEDs, which are similar for the active material but different in the fabrication process, elucidate the role of the non-radiative recombination rates at the ML/substrate interface. By studying current- and capacitance-voltage characteristics as well as electroluminescence spectra and time-resolved electroluminescence under pulsed and alternating bias pumping scheme in both the devices, we are able to ascribe the different experimental results to an efficient or inefficient minority carrier (electron) supply by the p-type substrate in the metal oxide semiconductor LEDs.

  2. Organic photovoltaic cell incorporating electron conducting exciton blocking layers

    Science.gov (United States)

    Forrest, Stephen R.; Lassiter, Brian E.

    2014-08-26

    The present disclosure relates to photosensitive optoelectronic devices including a compound blocking layer located between an acceptor material and a cathode, the compound blocking layer including: at least one electron conducting material, and at least one wide-gap electron conducting exciton blocking layer. For example, 3,4,9,10 perylenetetracarboxylic bisbenzimidazole (PTCBI) and 1,4,5,8-napthalene-tetracarboxylic-dianhydride (NTCDA) function as electron conducting and exciton blocking layers when interposed between the acceptor layer and cathode. Both materials serve as efficient electron conductors, leading to a fill factor as high as 0.70. By using an NTCDA/PTCBI compound blocking layer structure increased power conversion efficiency is achieved, compared to an analogous device using a conventional blocking layers shown to conduct electrons via damage-induced midgap states.

  3. Electronic energy loss spectra from mono-layer to few layers of phosphorene

    International Nuclear Information System (INIS)

    Mohan, Brij; Thakur, Rajesh; Ahluwalia, P. K.

    2016-01-01

    Using first principles calculations, electronic and optical properties of few-layers phosphorene has been investigated. Electronic band structure show a moderate band gap of 0.9 eV in monolayer phosphorene which decreases with increasing number of layers. Optical properties of few-layers of phosphorene in infrared and visible region shows tunability with number of layers. Electron energy loss function has been plotted and huge red shift in plasmonic behaviours is found. These tunable electronic and optical properties of few-layers of phosphorene can be useful for the applications of optoelectronic devices.

  4. Electronic energy loss spectra from mono-layer to few layers of phosphorene

    Energy Technology Data Exchange (ETDEWEB)

    Mohan, Brij, E-mail: brijmohanhpu@yahoo.com; Thakur, Rajesh; Ahluwalia, P. K. [Department of Physics, Himachal Pradesh University, Shimla (HP) India 171005 (India)

    2016-05-23

    Using first principles calculations, electronic and optical properties of few-layers phosphorene has been investigated. Electronic band structure show a moderate band gap of 0.9 eV in monolayer phosphorene which decreases with increasing number of layers. Optical properties of few-layers of phosphorene in infrared and visible region shows tunability with number of layers. Electron energy loss function has been plotted and huge red shift in plasmonic behaviours is found. These tunable electronic and optical properties of few-layers of phosphorene can be useful for the applications of optoelectronic devices.

  5. Acceleration of laser-injected electron beams in an electron-beam driven plasma wakefield accelerator

    International Nuclear Information System (INIS)

    Knetsch, Alexander

    2018-03-01

    Plasma wakefields deliver accelerating fields that are approximately a 100 times higher than those in conventional radiofrequency or even superconducting radiofrequency cavities. This opens a transformative path towards novel, compact and potentially ubiquitous accelerators. These prospects, and the increasing demand for electron accelerator beamtime for various applications in natural, material and life sciences, motivate the research and development on novel plasma-based accelerator concepts. However, these electron beam sources need to be understood and controlled. The focus of this thesis is on electron beam-driven plasma wakefield acceleration (PWFA) and the controlled injection and acceleration of secondary electron bunches in the accelerating wake fields by means of a short-pulse near-infrared laser. Two laser-triggered injection methods are explored. The first one is the Trojan Horse Injection, which relies on very good alignment and timing control between electron beam and laser pulse and then promises electron bunches with hitherto unprecedented quality as regards emittance and brightness. The physics of electron injection in the Trojan Horse case is explored with a focus on the final longitudinal bunch length. Then a theoretical and numerical study is presented that examines the physics of Trojan Horse injection when performed in an expanding wake generated by a smooth density down-ramp. The benefits are radically decreased drive-electron bunch requirements and a unique bunch-length control that enables longitudinal electron-bunch shaping. The second laser-triggered injection method is the Plasma Torch Injection, which is a versatile, all-optical laser-plasma-based method capable to realize tunable density downramp injection. At the SLAC National Laboratory, the first proof-of-principle was achieved both for Trojan Horse and Plasma Torch injection. Setup details and results are reported in the experimental part of the thesis along with the commissioning

  6. Electric potential structures and propagation of electron beams injected from a spacecraft into a plasma

    International Nuclear Information System (INIS)

    Singh, Nagendra; Hwang, K.S.

    1988-01-01

    The propagation of electron beams injected from a spacecraft into an ambient plasma and the associated potential structures are investigated by one-dimensional Vlasov simulations. For moderate beams, for which the time average spacecraft potential (Φ sa ) lies in the range T e much-lt eΦ sa approx-lt W B , where T e is the electron temperature in energy units and W B is the average beam energy, a double layer forms near the beam head which propagates into the ambient plasma much more slowly than the initial beam velocity. The double layer formation is being reported for the first time. For weak beams, for which |eΦ sa | approx-lt T e , the beam propagates with the initial beam velocity, and no double layer formation occurs. On the other hand, for strong beams for which eΦ sa > W B , the bulk of the beam is returned to the spacecraft, and the main feature of the potential structure is a sheath formation with an intense electric field limited to distances d near the spacecraft surface. These features of the potential structures are compared with those seen in laboratory and space experiments on electron beam injections

  7. Externally Controlled Injection of Electrons by a Laser Pulse in a Laser Wakefield Electron Accelerator

    CERN Document Server

    Chen Szu Yuan; Chen Wei Ting; Chien, Ting-Yei; Lee, Chau-Hwang; Lin, Jiunn-Yuan; Wang, Jyhpyng

    2005-01-01

    Spatially and temporally localized injection of electrons is a key element for development of plasma-wave electron accelerator. Here we report the demonstration of two different schemes for electron injection in a self-modulated laser wakefield accelerator (SM-LWFA) by using a laser pulse. In the first scheme, by implementing a copropagating laser prepulse with proper timing, we are able to control the growth of Raman forward scattering and the production of accelerated electrons. We found that the stimulated Raman backward scattering of the prepulse plays the essential role of injecting hot electrons into the fast plasma wave driven by the pump pulse. In the second scheme, by using a transient density ramp we achieve self-injection of electrons in a SM-LWFA with spatial localization. The transient density ramp is produced by a prepulse propagating transversely to drill a density depression channel via ionization and expansion. The same mechanism of injection with comparable efficiency is also demonstrated wi...

  8. Production of IgY by layers injected with Salmonella typhimurium

    Directory of Open Access Journals (Sweden)

    Hee, H. L.

    2017-06-01

    Full Text Available In the present study, production of IgY and performance of layers immunised with Salmonella typhimurium were evaluated. Thirty 23-wk old layers (Lohmann Brown with average body weight of 1.6 � 0.03 kg. were randomly and equally divided into two groups. Both groups were placed in a specific pathogen free room equipped with an exhaust fan. The layers were placed in single battery cages with slightly tilted floor which allowed eggs to roll straight into the collecting tray. Lyophilized, attenuated whole cells of S. typhimurium strain [serotype: Somatic (O, antigen 1, 4, (5, 12, flagella (H N12 phase I: 1; phase II: 1, 2 (Group B] that were emulsified with Freund�s complete adjuvant were used to immunise the layers intramuscularly 3 times at 2-wk interval (treatment group. Layers in the control group were injected with a solution of sterilized phosphate-buffered saline (PBS emulsified with an equal volume of Freund�s complete adjuvant. The experimental period lasted for 14 wks. Specific antibodies were detected by enzyme-linked immunosorbent assay. The results showed that the birds lost weight during the injection period, but the weights slowly increased in the following weeks. However, the weight of layers in the treated group remained lower (P<0.05 when compared to the period before injection. The loss in body weight of layers was the result of reduced feed intake, in particular during the injection weeks. Layers in the control group had a higher egg production, by about 10.1% than layers in the treatment group throughout the experimental period. The egg production for layers in treatment group showed a significant decrease (P<0.05 during the immunization period by 28.8%. The egg production significantly increased (P<0.05 to 71.9% after this period, but the production did not reach the level before immunisation. The weight of eggs of treated layers were significantly lower (P<0.05 than the control layers during the injection weeks. The egg

  9. Laser injection of ultra-short electron bursts for the diagnosis of Hall thruster plasma

    International Nuclear Information System (INIS)

    Albarede, L; Gibert, T; Lazurenko, A; Bouchoule, A

    2006-01-01

    The present developments of Hall thrusters for satellite control and space mission technologies represent a new step towards their routine use in place of conventional thermal thrusters. In spite of their long R and D history, the complex physics of the E x B discharge at work in these structures has prevented, up to now, the availability of predictive simulations. The electron transport in the accelerating layers of these thrusters is one of the remaining challenges in this direction. From the experimental point of view, any diagnostics of electron transport and electric field in this critical layer would be welcome for comparison with code predictions. Appropriate diagnostics are difficult, due to the very aggressive local plasma conditions. This paper presents the first step in the development of a new tool for characterization of the plasma electric field in the very near exhaust thruster plume and comparison with simulation code predictions. The main idea is to use very short bursts of electrons, probing local electron dynamics in this critical plume area. Such bursts can be obtained through photoelectric emission induced by a UV pulsed laser beam on a convenient target. A specific study, devoted to the characterization of the electron burst emission, is presented in the first section of the paper; the implementation and testing of the injection of electrons in the critical layer of Hall thruster plasma is described in the second section. The design and testing of a fast and sensitive system for characterizing the transport of injected bursts will be the next step of this program. It requires a preliminary evaluation of electron trajectories which was achieved by using simulation code. Simulation data are presented in the last section of the paper, with the full diagnostic design to be tested in the near future, when runs will be available in the renewed PIVOINE facility. The same electron burst injection could also be a valuable input in the present

  10. Study on the integration of layered water injection technology and subdivision adjustment

    Science.gov (United States)

    Zhang, Yancui

    2018-06-01

    With oil many infillings, thin and poor reservoir exploitation changes gradually to low permeability, thin and poor reservoir development characteristics of multiple layers thickness, low permeability, in the actual development process, the General Department of oil layers of encryption perforation long thin and poor mining, interlayer contradiction more prominent, by conventional layered water injection that can alleviate the contradiction between layers to a certain extent, by the injection interval and other factors can not fundamentally solve the problem, leading to the potential well area key strata or layers is difficult to determine, the layering test and slicing technology is difficult to adapt to the need of tap water control block. This paper through numerical simulation using the conceptual model and the actual block, it has a great influence on the low permeability reservoir of different stratified water permeability combination of permeability technology and application limits, profit and loss balance principle, low oil prices on the lower series of subdivision technical and economic limit, so the reservoir subdivision reorganization, narrow wells mining, reduce the interference between layers, from the maximum fundamental improvement of layered water injection efficiency. At the same time, in order to meet the needs of reservoir subdivision adjustment, subdividing distance with water, a small interlayer wells subdivision technology for further research in the pickup, solved using two ordinary bridge eccentric water regulator with injection of two layers, by throwing exercise distance limit card from the larger problem, the water distribution card size from 7.0m to 1.0m, and the testing efficiency is improved, and provide technical support for further subdivision water injection wells.

  11. Impact of three-dimensional geometry on the performance of isolated electron-injection infrared detectors

    Energy Technology Data Exchange (ETDEWEB)

    Fathipour, Vala; Jang, Sung Jun; Nia, Iman Hassani; Mohseni, Hooman, E-mail: hmohseni@northwestern.edu [Bio-Inspired Sensors and Optoelectronics Laboratory, Northwestern University, 2145 Sheridan Rd, Evanston, Illinois 60208 (United States)

    2015-01-12

    We present a quantitative study of the influence of three-dimensional geometry of the isolated electron–injection detectors on their characteristics. Significant improvements in the device performance are obtained as a result of scaling the injector diameter with respect to the trapping/absorbing layer diameters. Devices with about ten times smaller injector area with respect to the trapping/absorbing layer areas show more than an order of magnitude lower dark current, as well as an order of magnitude higher optical gain compared with devices of same size injector and trapping/absorbing layer areas. Devices with 10 μm injector diameter and 30 μm trapping/absorbing layer diameter show an optical gain of ∼2000 at bias voltage of −3 V with a cutoff wavelength of 1700 nm. Analytical expressions are derived for the electron-injection detector optical gain to qualitatively explain the significance of scaling the injector with respect to the absorber.

  12. Decreasing the electronic confinement in layered perovskites through intercalation.

    Science.gov (United States)

    Smith, Matthew D; Pedesseau, Laurent; Kepenekian, Mikaël; Smith, Ian C; Katan, Claudine; Even, Jacky; Karunadasa, Hemamala I

    2017-03-01

    We show that post-synthetic small-molecule intercalation can significantly reduce the electronic confinement of 2D hybrid perovskites. Using a combined experimental and theoretical approach, we explain structural, optical, and electronic effects of intercalating highly polarizable molecules in layered perovskites designed to stabilize the intercalants. Polarizable molecules in the organic layers substantially alter the optical and electronic properties of the inorganic layers. By calculating the spatially resolved dielectric profiles of the organic and inorganic layers within the hybrid structure, we show that the intercalants afford organic layers that are more polarizable than the inorganic layers. This strategy reduces the confinement of excitons generated in the inorganic layers and affords the lowest exciton binding energy for an n = 1 perovskite of which we are aware. We also demonstrate a method for computationally evaluating the exciton's binding energy by solving the Bethe-Salpeter equation for the exciton, which includes an ab initio determination of the material's dielectric profile across organic and inorganic layers. This new semi-empirical method goes beyond the imprecise phenomenological approximation of abrupt dielectric-constant changes at the organic-inorganic interfaces. This work shows that incorporation of polarizable molecules in the organic layers, through intercalation or covalent attachment, is a viable strategy for tuning 2D perovskites towards mimicking the reduced electronic confinement and isotropic light absorption of 3D perovskites while maintaining the greater synthetic tunability of the layered architecture.

  13. Control of runaway electron energy using externally injected whistler waves

    Science.gov (United States)

    Guo, Zehua; McDevitt, Christopher J.; Tang, Xian-Zhu

    2018-03-01

    One way of mitigating runaway damage of the plasma-facing components in a tokamak fusion reactor is by limiting the runaway electron energy under a few MeV, while not necessarily reducing the runaway current appreciably. Here, we describe a physics mechanism by which such momentum space engineering of the runaway distribution can be facilitated by externally injected high-frequency electromagnetic waves such as whistler waves. The drastic impact that wave-induced scattering can have on the runaway energy distribution is fundamentally the result of its ability to control the runaway vortex in the momentum space. The runaway vortex, which is a local circulation of runaways in momentum space, is the outcome of the competition between Coulomb collisions, synchrotron radiation damping, and runaway acceleration by the parallel electric field. By introducing a wave that resonantly interacts with runaways in a particular range of energies which is mildly relativistic, the enhanced scattering would reshape the vortex by cutting off the part that is highly relativistic. The efficiency of resonant scattering accentuates the requirement that the wave amplitude can be small so the power requirement from external wave injection is practical for the mitigation scheme.

  14. Runaway electron generation during plasma shutdown by killer pellet injection

    International Nuclear Information System (INIS)

    Gal, K; Feher, T; Smith, H; Fueloep, T; Helander, P

    2008-01-01

    Tokamak discharges are sometimes terminated by disruptions that may cause large mechanical and thermal loads on the vessel. To mitigate disruption-induced problems it has been proposed that 'killer' pellets could be injected into the plasma in order to safely terminate the discharge. Killer pellets enhance radiative energy loss and thereby lead to rapid cooling and shutdown of the discharge. But pellets may also cause runaway electron generation, as has been observed in experiments in several tokamaks. In this work, runaway dynamics in connection with deuterium or carbon pellet-induced fast plasma shutdown is considered. A pellet code, which calculates the material deposition and initial cooling caused by the pellet is coupled to a runaway code, which determines the subsequent temperature evolution and runaway generation. In this way, a tool has been created to test the suitability of different pellet injection scenarios for disruption mitigation. If runaway generation is avoided, the resulting current quench times are too long to safely avoid large forces on the vessel due to halo currents

  15. Injection of a relativistic electron beam into neutral hydrogen gas

    International Nuclear Information System (INIS)

    de Haan, P.H.; Janssen, G.C.A.M.; Hopman, H.J.; Granneman, E.H.A.

    1982-01-01

    The injection of a relativistic electron beam (0.8 MeV, 6 kA, 150 nsec) into hydrogen gas of 190 Pa pressure results in a plasma with density n/sub e/approx. =10 20 m -3 and temperature kT/sub e/< or approx. =kT/sub i/approx. =3.5 eV. The results of the measurements show good agreement with computations based on a model combining gas ionization and turbulent plasma heating. It is found that a quasistationary state exists in which the energy lost by the beam (about 6% of the total kinetic energy of the beam) is partly used to further ionize and dissociate the gas and for the other part is lost as line radiation

  16. Electron beam injection during active experiments. 1. Electromagnetic wave emissions

    International Nuclear Information System (INIS)

    Winglee, R.M.; Kellogg, P.J.

    1990-01-01

    During the active injection of an electron beam, a broad spectrum of waves is generated. In this paper examples of spectra from the recent Echo 7 experiment are presented. These results show that the characteristics of the emissions can change substantially with altitude. Two-dimensional (three velocity) relativistic electromagnetic particle simulations are used to investigate the changes in the plasma conditions required to account for the observed spectral variations. It is shown that many of these variations can be accounted for by assuming that the ratio of the electron plasma frequency ω pe to cyclotron frequency Ω e is less than unity at the lower altitudes of about 200 km and near or above unity at apogee of about 300 km. In the former case, whistlers with a cutoff at ω pe , lower hybrid and plasma waves are driven by the parallel beam energy while electromagnetic fundamental z mode and second harmonic x mode and electrostatic upper hybrid waves are driven by the perpendicular beam energy through the master instability. E x B drifts driven by perpendicular electric fields associated with the beam-plasma interaction can also be important in generating maser emission, particularly for field-aligned injection where there is no intrinsic perpendicular beam energy. The power in the electrostatic waves is a few percent of the beam energy and that in the electromagnetic waves a few tenths of a percent. In the latter case, where ω pe /Ω e increases above unity, emission in the fundamental z mode and second harmonic x mode become suppressed

  17. Calculation of the mobility of electrons injected in liquid argon

    International Nuclear Information System (INIS)

    Ascarelli, G.

    1986-01-01

    A model calculation is carried out in which we evaluate the mobility of electrons injected in liquid argon. Scattering by both phonons and static density fluctuations is taken into account. The calculation for the mobility limited by phonon scattering differs from the usual calculation in crystals by considering both the local changes in the deformation potential and the changes of the amplitude of the phonons that are caused by the existence of density fluctuations. The calculation of the mobility limited by scattering from density fluctuations is carried out with the assumption that they give rise to a square-well (or barrier) potential that will scatter the electrons. The above perturbation ΔV 0 is related to a density fluctuation Δn by ΔV 0 = V 0 (n-bar+Δn)-V 0 (n-bar). The scattering volumes Ω, where the density fluctuation Δn is located, are weighted by exp(-r/xi) where xi is the correlation length and r is the radius of Ω. The magnitude of the different density fluctuations is weighted by exp[-(Δn) 2 Ω/2nS(0)], where S(0) = nk/sub B/TK/sub T/, K/sub T/ is the isothermal compressibility. The calculation of the mean free path is carried out using partial waves. Both scattering mechanisms, scattering by phonons and static density fluctuations, give comparable contributions to the mobility

  18. Wearable electronics formed on intermediate layer on textiles

    KAUST Repository

    Hussain, Muhammad Mustafa

    2017-07-27

    One manner of producing more desirable clothing with electronic capabilities is to manufacture electronics, such as the charging wires or devices themselves, directly onto the textile materials. Textile materials generally do not support the manufacturing of electronic devices, in part because the surface of the textile is too rough for electronic devices or the processes used to manufacturing electronic devices. An intermediate layer (204) may be placed on the textile material (202) to reduce the roughness of the surface of the textile material and provide other beneficial characteristics for the placement of electronic devices (206) directly on the textile material.

  19. Structural complexities in the active layers of organic electronics.

    Science.gov (United States)

    Lee, Stephanie S; Loo, Yueh-Lin

    2010-01-01

    The field of organic electronics has progressed rapidly in recent years. However, understanding the direct structure-function relationships between the morphology in electrically active layers and the performance of devices composed of these materials has proven difficult. The morphology of active layers in organic electronics is inherently complex, with heterogeneities existing across multiple length scales, from subnanometer to micron and millimeter range. A major challenge still facing the organic electronics community is understanding how the morphology across all of the length scales in active layers collectively determines the device performance of organic electronics. In this review we highlight experiments that have contributed to the elucidation of structure-function relationships in organic electronics and also point to areas in which knowledge of such relationships is still lacking. Such knowledge will lead to the ability to select active materials on the basis of their inherent properties for the fabrication of devices with prespecified characteristics.

  20. Injection of Spin-Polarized Electrons into a AlGaN/GaN Device from an Electrochemical Cell: Evidence for an Extremely Long Spin Lifetime.

    Science.gov (United States)

    Kumar, Anup; Capua, Eyal; Fontanesi, Claudio; Carmieli, Raanan; Naaman, Ron

    2018-04-24

    Spin-polarized electrons are injected from an electrochemical cell through a chiral self-assembled organic monolayer into a AlGaN/GaN device in which a shallow two-dimensional electron gas (2DEG) layer is formed. The injection is monitored by a microwave signal that indicates a coherent spin lifetime that exceeds 10 ms at room temperature. The signal was found to be magnetic field independent; however, it depends on the current of the injected electrons, on the length of the chiral molecules, and on the existence of 2DEG.

  1. Enhancement of electron injection in inverted bottom-emitting organic light-emitting diodes using Al/LiF compound thin film

    Science.gov (United States)

    Nie, Qu-yang; Zhang, Fang-hui

    2018-05-01

    The inverted bottom-emitting organic light-emitting devices (IBOLEDs) were prepared, with the structure of ITO/Al ( x nm)/LiF (1 nm)/Bphen (40 nm)/CBP: GIr1 (14%):R-4b (2%) (10 nm)/BCP (3 nm)/CBP:GIr1 (14%):R-4b (2%) (20 nm)/TCTA (10 nm)/NPB (40 nm)/MoO3 (40 nm)/Al (100 nm), where the thickness of electron injection layer Al ( x) are 0 nm, 2 nm, 3 nm, 4 nm and 5 nm, respectively. In this paper, the electron injection condition and luminance properties of inverted devices were investigated by changing the thickness of Al layer in Al/LiF compound thin film. It turns out that the introduction of Al layer can improve electron injection of the devices dramatically. Furthermore, the device exerts lower driving voltage and higher current efficiency when the thickness of electron injection Al layer is 3 nm. For example, the current efficiency of the device with 3-nm-thick Al layer reaches 19.75 cd·A-1 when driving voltage is 7 V, which is 1.24, 1.17 and 17.03 times larger than those of the devices with 2 nm, 4 nm and 5 nm Al layer, respectively. The device property reaches up to the level of corresponding conventional device. In addition, all inverted devices with electron injection Al layer show superior stability of color coordinate due to the adoption of co-evaporation emitting layer and BCP spacer-layer, and the color coordinate of the inverted device with 3-nm-thick Al layer only changes from (0.580 6, 0.405 6) to (0.532 8, 0.436 3) when driving voltage increases from 6 V to 10 V.

  2. Dynamics of Singlet Fission and Electron Injection in Self-Assembled Acene Monolayers on Titanium Dioxide

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Justin C [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Pace, Natalie A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Arias, Dylan H [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Christensen, Steven T [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Granger, Devin B. [University of Kentucky; Anthony, John E. [University of Kentucky

    2018-02-26

    We employ a combination of linear spectroscopy, electrochemistry, and transient absorption spectroscopy to characterize the interplay between electron transfer and singlet fission dynamics in polyacene-based dyes attached to nanostructured TiO2. For triisopropyl silylethynyl (TIPS)-pentacene, we find that the singlet fission time constant increases to 6.5 ps on a nanostructured TiO2 surface relative to a thin film time constant of 150 fs, and that triplets do not dissociate after they are formed. In contrast, TIPS-tetracene singlets quickly dissociate in 2 ps at the molecule/TiO2 interface, and this dissociation outcompetes the relatively slow singlet fission process. The addition of an alumina layer slows down electron injection, allowing the formation of triplets from singlet fission in 40 ps. However, the triplets do not inject electrons, which is likely due to a lack of sufficient driving force for triplet dissociation. These results point to the critical balance required between efficient singlet fission and appropriate energetics for interfacial charge transfer.

  3. Characteristics of organic light emitting diodes with copper iodide as injection layer

    Energy Technology Data Exchange (ETDEWEB)

    Stakhira, P., E-mail: stakhira@polynet.lviv.u [Lviv Polytechnic National University, S. Bandera, 12, Lviv, 79013 (Ukraine); Cherpak, V.; Volynyuk, D.; Ivastchyshyn, F. [Lviv Polytechnic National University, S. Bandera, 12, Lviv, 79013 (Ukraine); Hotra, Z. [Lviv Polytechnic National University, S. Bandera, 12, Lviv, 79013 (Ukraine); Rzeszow University of Technology, W. Pola 2, Rzeszow, 35-959 (Poland); Tataryn, V. [Lviv Polytechnic National University, S. Bandera, 12, Lviv, 79013 (Ukraine); Luka, G. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)

    2010-09-30

    We have studied the use of a thin copper iodide (CuI) film as an efficient injection layer of holes from indium tin oxide (ITO) anode in a light-emitting diode structure based on tris-8-hydroxyquinoline aluminium (Alq3). The results of impedance analysis of two types of diode structures, ITO/CuI/Alq3/poly(ethylene glycol) dimethyl ether/Al and ITO/Alq3/poly(ethylene glycol) dimethyl ether/Al, are presented. Comparative analysis of their current density-voltage, luminance-voltage and impedance characteristics shows that presence of CuI layer facilitates injection of holes from ITO anode into the light-emitting layer Alq3 and increases electroluminescence efficiency of the organic light emitting diodes.

  4. Buildup of electrons with hot electron beam injection into a homogeneous magnetic field

    International Nuclear Information System (INIS)

    Bashko, V.A.; Krivoruchko, A.M.; Tarasov, I.K.

    1989-01-01

    The injection of the monoenergetic beam of electrons into the vacuum drift channel under the conditions when the beam current exceeds a certain threshold value involves a virtual cathode creation. The process of virtual cathode creation leads to an exchange of one-fluid movement of beam particles to three-fluid one corresponding to incident, reflected and passed through anticathode beam particles. For the monoenergetic beam case when the velocity spread Δv dr (v dr is the beam drift velocity), the beam instability was predicted in theory and was observed in experiment. Meanwhile, the injection in the drift space of the 'hot' beam having finite spread in velocities may be accompanied not only by the reflection of particles if their velocity v 1/2 (where φ is the electrostatic potential dip value, e and m are the electron charge and mass, respectively), but also the mutual Coulomb scattering of incident and reflected electrons. The scattering process leads in its turn to appearance of viscosity forces and to trapping of a part of beam electrons into the effective potential well formed by electrostatic potential dip and the viscous force potential. The interaction of travelling and trapped particles may occur even at the stage preceding the virtual electrode formation and it may influence the process of its appearance and also the current flow through the drift space. In this report there are described the experimental results on accumulation of electrons when electron beam propagates in vacuum and has a large spread in particle velocities Δv dr in the homogeneous longitudinal magnetic field when ω pe He where ω pe is the electron Langmuir frequency of beam electrons, ω He is the electron cyclotron frequency. (author) 6 refs., 2 figs

  5. Electron heat transport in stochastic magnetic layer

    International Nuclear Information System (INIS)

    Becoulet, M.; Ghendrih, Ph.; Capes, H.; Grosman, A.

    1999-06-01

    Progress in the theoretical understanding of the local behaviour of the temperature field in ergodic layer was done in the framework of quasi-linear approach but this quasi-linear theory was not complete since the resonant modes coupling (due to stochasticity) was neglected. The stochastic properties of the magnetic field in the ergodic zone are now taken into account by a non-linear coupling of the temperature modes. The three-dimension heat transfer modelling in the ergodic-divertor configuration is performed by quasi-linear (ERGOT1) and non-linear (ERGOT2) numerical codes. The formalism and theoretical basis of both codes are presented. The most important effect that can be simulated with non-linear code is the averaged temperature profile flattening that occurs in the ergodic zone and the barrier creation that appears near the separatrix during divertor operation. (A.C.)

  6. Production of a monoenergetic electron bunch in a self-injected laser-wakefield accelerator

    International Nuclear Information System (INIS)

    Chang, C.-L.; Hsieh, C.-T.; Ho, Y.-C.; Chen, Y.-S.; Lin, J.-Y.; Wang, J.; Chen, S.-Y.

    2007-01-01

    Production of a monoenergetic electron bunch in a self-injected laser-wakefield accelerator is investigated with a tomographic method which resolves the electron injection and acceleration processes. It is found that all the electrons in the monoenergetic electron bunch are injected at the same location in the plasma column and then accelerated with an acceleration gradient exceeding 2 GeV/cm. The injection position shifts with the position of pump-pulse focus, and no significant deceleration is observed for the monoenergetic electron bunch after it reaches the maximum energy. The results are consistent with the model of transverse wave breaking and beam loading for the injection of monoenergetic electrons. The tomographic method adds a crucial dimension to the whole array of existing diagnostics for laser beams, plasma waves, and electron beams. With this method the details of the underlying physical processes in laser-plasma interactions can be resolved and compared directly to particle-in-cell simulations

  7. Electron ECHO 6: a study by particle detectors of electrons artificially injected into the magnetosphere

    International Nuclear Information System (INIS)

    Malcolm, P.R.

    1986-01-01

    The ECHO-6 sounding rocket was launched from the Poke Flat Research Range, Alaska on 30 March 1983. A Terrier-Black Brant launch vehicle carried the payload on a northward trajectory over an auroral arc and to an apogee of 216 kilometers. The primary objective of the ECHO-6 experiment was to evaluate electric fields, magnetic fields, and plasma processes in the distant magnetosphere by injecting electron beams in the ionosphere and observing conjugate echoes. The experiment succeeded in injection 10-36 keV beams during the existence of a moderate growth-phase aurora, an easterly electrojet system, and a pre-midnight inflation condition of the magnetosphere. The ECHO-6 payload system consisted of an accelerator MAIN payload, a free-flying Plasma Diagnostics Package (PDP), and four rocket-propelled Throw Away Detectors (TADs). The PDP was ejected from the MAIN payload to analyze electric fields, plasma particles, energetic electrons, and photometric effects produced by beam injections. The TADs were ejected from the MAIN payload in a pattern to detect echoes in the conjugate echo region south of the beam-emitting MAIN payload. The TADs reached distances exceeding 3 kilometers from the MAIN payload and made measurements of the ambient electrons by means of solid-state detectors and electrostatic analyzers

  8. Improved performance of quantum dot light emitting diode by modulating electron injection with yttrium-doped ZnO nanoparticles

    Science.gov (United States)

    Li, Jingling; Guo, Qiling; Jin, Hu; Wang, Kelai; Xu, Dehua; Xu, Yongjun; Xu, Gang; Xu, Xueqing

    2017-10-01

    In a typical light emitting diode (QD-LED), with ZnO nanoparticles (NPs) serving as the electron transport layer (ETL) material, excessive electron injection driven by the matching conduction band maximum (CBM) between the QD and this oxide layer usually causes charge imbalance and degrades the device performance. To address this issue, the electronic structure of ZnO NPs is modified by the yttrium (Y) doping method. We demonstrate that the CBM of ZnO NPs has a strong dependence on the Y-doping concentration, which can be tuned from 3.55 to 2.77 eV as the Y doping content increases from 0% to 9.6%. This CBM variation generates an enlarged barrier between the cathode and this ZnO ETL benefits from the modulation of electron injection. By optimizing electron injection with the use of a low Y-doped (2%) ZnO to achieve charge balance in the QD-LED, device performance is significantly improved with maximum luminance, peak current efficiency, and maximal external quantum efficiency increase from 4918 cd/m2, 11.3 cd/A, and 4.5% to 11,171 cd/m2, 18.3 cd/A, and 7.3%, respectively. This facile strategy based on the ETL modification enriches the methodology of promoting QD-LED performance.

  9. Organic light-emitting diodes with F16CuPC as an efficient hole-injection layer

    International Nuclear Information System (INIS)

    Lee, H. K.; Shin, Y. C.; Kwon, D. S.; Lee, C. H.

    2006-01-01

    We report a new hole-injection material, copper hexadecafluorophthalocyanine (F 16 CuPC) for organic light-emitting diodes (OLEDs) consisting of N,N'-di(1-naphthyl)-N,N'-diphenylbenzidine (α-NPD) as a hole-transport layer and 8-tris-hydroxyquinoline aluminum (Alq 3 ) as a light-emitting and electron-transport layer. The insertion of the F 16 CuPC between indium-tin oxide (ITO) and α-NPD reduces the operating voltage significantly and thereby increases the luminous efficiency. By measuring the device characteristics for various F 16 CuPC thicknesses, we find that an optimum F 16 CuPC thickness is about 15 nm. At a luminance of 1000 cd/m 2 , the device with 15-nm-thick F 16 CuPC shows a luminous efficiency of 1.5 lm/W and a device operating voltage of 7.2 V while the device without the F 16 CuPC layer shows 1.1 lm/W and 10.4 V. The significant decrease in a driving voltage and increase in the luminous efficiency can be attributed to the high hole-injection efficiency when F 16 CuPC is inserted between ITO and α-NPD.

  10. Effect of hole injection layer/hole transport layer polymer and device structure on the properties of white OLED.

    Science.gov (United States)

    Cho, Ho Young; Park, Eun Jung; Kim, Jin-Hoo; Park, Lee Soon

    2008-10-01

    Copolymers containing carbazole and aromatic amine unit were synthesized by using Pd-catalyzed polycondensation reaction. The polymers were characterized in terms of their molecular weight and thermal stability and their UV and PL properties in solution and film state. The band gap energy of the polymers was also determined by the UV absorption and HOMO energy level data. The polymers had high HOMO energy level of 5.19-5.25 eV and work function close to that of ITO. The polymers were thus tested as hole injection/transport layer in the white organic light emitting diodes (OLED) by using 4,4'-bis(2,2-diphenyl-ethen-1-yl)diphenyl (DPVBi) as blue emitting material and 5,6,11,12-tetraphenylnaphthacene (Rubrene) as orange emitting dopant. The synthesized polymer, poly bis[6-bromo-N-(2-ethylhexyl)-carbazole-3-yl] was found to be useful as hole injection layer/hole transport layer (HIL/HTL) multifunctional material with high luminance efficiency and stable white color coordinate in the wide range of applied voltage.

  11. Wear resistance of WCp/Duplex Stainless Steel metal matrix composite layers prepared by laser melt injection

    NARCIS (Netherlands)

    Do Nascimento, A. M.; Ocelik, V.; Ierardi, M. C. F.; De Hosson, J. Th. M.

    2008-01-01

    Laser Melt Injection (LMI) was used to prepare metal matrix composite layers with a thickness of about 0.7 mm and approximately 10% volume fraction of WC particles in three kinds of Cast Duplex Stainless Steels (CDSSs). WC particles were injected into the molten surface layer using Nd:YAG high power

  12. Light-emitting diodes based on solution-processed nontoxic quantum dots: oxides as carrier-transport layers and introducing molybdenum oxide nanoparticles as a hole-inject layer.

    Science.gov (United States)

    Bhaumik, Saikat; Pal, Amlan J

    2014-07-23

    We report fabrication and characterization of solution-processed quantum dot light-emitting diodes (QDLEDs) based on a layer of nontoxic and Earth-abundant zinc-diffused silver indium disulfide (AIZS) nanoparticles as an emitting material. In the QDLEDs fabricated on indium tin oxide (ITO)-coated glass substrates, we use layers of oxides, such as graphene oxide (GO) and zinc oxide (ZnO) nanoparticles as a hole- and electron-transport layer, respectively. In addition, we introduce a layer of MoO3 nanoparticles as a hole-inject one. We report a comparison of the characteristics of different device architectures. We show that an inverted device architecture, ITO/ZnO/AIZS/GO/MoO3/Al, yields a higher electroluminescence (EL) emission, compared to direct ones, for three reasons: (1) the GO/MoO3 layers introduce barriers for electrons to reach the Al electrode, and, similarly, the ZnO layers acts as a barrier for holes to travel to the ITO electrode; (2) the introduction of a layer of MoO3 nanoparticles as a hole-inject layer reduces the barrier height for holes and thereby balances charge injection in the inverted structure; and (3) the wide-bandgap zinc oxide next to the ITO electrode does not absorb the EL emission during its exit from the device. In the QDLEDs with oxides as carrier inject and transport layers, the EL spectrum resembles the photoluminescence emission of the emitting material (AIZS), implying that excitons are formed in the quaternary nanocrystals and decay radiatively.

  13. Hot-electron effect in spin relaxation of electrically injected electrons in intrinsic Germanium.

    Science.gov (United States)

    Yu, T; Wu, M W

    2015-07-01

    The hot-electron effect in the spin relaxation of electrically injected electrons in intrinsic germanium is investigated by the kinetic spin Bloch equations both analytically and numerically. It is shown that in the weak-electric-field regime with E ≲ 0.5 kV cm(-1), our calculations have reasonable agreement with the recent transport experiment in the hot-electron spin-injection configuration (2013 Phys. Rev. Lett. 111 257204). We reveal that the spin relaxation is significantly enhanced at low temperature in the presence of weak electric field E ≲ 50 V cm(-1), which originates from the obvious center-of-mass drift effect due to the weak electron-phonon interaction, whereas the hot-electron effect is demonstrated to be less important. This can explain the discrepancy between the experimental observation and the previous theoretical calculation (2012 Phys. Rev. B 86 085202), which deviates from the experimental results by about two orders of magnitude at low temperature. It is further shown that in the strong-electric-field regime with 0.5 ≲ E ≲ 2 kV cm(-1), the spin relaxation is enhanced due to the hot-electron effect, whereas the drift effect is demonstrated to be marginal. Finally, we find that when 1.4 ≲ E ≲ 2 kV cm(-1) which lies in the strong-electric-field regime, a small fraction of electrons (≲5%) can be driven from the L to Γ valley, and the spin relaxation rates are the same for the Γ and L valleys in the intrinsic sample without impurity. With the negligible influence of the spin dynamics in the Γ valley to the whole system, the spin dynamics in the L valley can be measured from the Γ valley by the standard direct optical transition method.

  14. The DFT investigations of the electron injection in hydrazone-based sensitizers

    KAUST Repository

    Al-Sehemi, Abdullah G.; Irfan, Ahmad; Asiri, Abdullah M.

    2012-01-01

    solvent. The calculated absorption spectra in ethanol, acetonitrile, and methanol are in good agreement with experimental evidences. The absorption spectra are red shifted compared to System1. On the basis of electron injection and electronic coupling

  15. Intense synchrotron radiation from a magnetically compressed relativistic electron layer

    International Nuclear Information System (INIS)

    Shearer, J.W.; Nowak, D.A.; Garelis, E.; Condit, W.C.

    1975-10-01

    Using a simple model of a relativistic electron layer rotating in an axial magnetic field, energy gain by an increasing magnetic field and energy loss by synchrotron radiation were considered. For a typical example, initial conditions were approximately 8 MeV electron in approximately 14 kG magnetic field, at a layer radius of approximately 20 mm, and final conditions were approximately 4 MG magnetic field approximately 100 MeV electron layer energy at a layer radius of approximately 1.0 mm. In the final state, the intense 1-10 keV synchrotron radiation imposes an electron energy loss time constant of approximately 100 nanoseconds. In order to achieve these conditions in practice, the magnetic field must be compressed by an imploding conducting liner; preferably two flying rings in order to allow the synchrotron radiation to escape through the midplane. The synchrotron radiation loss rate imposes a lower limit to the liner implosion velocity required to achieve a given final electron energy (approximately 1 cm/μsec in the above example). In addition, if the electron ring can be made sufficiently strong (field reversed), the synchrotron radiation would be a unique source of high intensity soft x-radiation

  16. Electrically conductive polyaniline as hole-injection layer for MEH-PPV:BT based polymer light emitting diodes

    International Nuclear Information System (INIS)

    Mohsennia, M.; Bidgoli, M. Massah; Boroumand, F. Akbari; Nia, A. Mohsen

    2015-01-01

    Graphical abstract: The PANI prepared at 15 °C with higher electrical conductivity has been used as hole-injection layer (HIL) in polymer light emitting diodes (PLEDs) with structure of ITO/PANI/MEHPPV:BT/Al. - Highlights: • Polyaniline (PANI) was synthesized at different temperatures (5, 10, 15, 20 and 25 °C). • The PANI sample with higher electrical conductivity was used as HIL in the PLED devices. • The PANI injection layer yielded higher current and lower turn-on voltage. • The effect of MEH-PPV:BT weight ratio on the PLED performance has been also investigated. • The J–V characteristics of the devices have been explained by FN tunneling model. - Abstract: Polyaniline (PANI) was synthesized by oxidative polymerization of aniline at different temperatures (5, 10, 15, 20 and 25 °C). The influence of polymerization temperature on sheet resistance of PANI was investigated, and the one prepared at 15 °C which showed lowest resistivity was chosen for further analysis. PANI was subsequently used as hole-injection layer (HIL) in polymer light emitting diodes (PLEDs) with structure of poly(ethylene terephthalate) (PET)/indium tin oxide (ITO)/PANI/MEH-PPV:BT/aluminum (Al). The PLEDs with emission layer made from a blend of poly [2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) and an electron transporting material, benzothiadiazole (BT), were fabricated at room conditions without using glove boxes. Our results showed an improvement in performance of our PANI-based fabricated PLEDs (PET/ITO/PANI/MEH-PPV:BT/Al) compared to the conventional devices that use poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PET/ITO/PEDOT:PSS/MEH-PPV:BT/Al) as their HIL. The hole injection barrier height (φ) of the fabricated PLEDs were then estimated using the Fowler–Nordheim (FN) field-emission tunneling theory and revealed that the barrier height decreases by increasing the BT concentration in the MEH-PPV:BT blend layer

  17. Steam and air co-injection in removing residual TCE in unsaturated layered sandy porous media.

    Science.gov (United States)

    Peng, Sheng; Wang, Ning; Chen, Jiajun

    2013-10-01

    Steam and air co-injection is a promising technique for volatile and semi-volatile organic contaminant remediation in heterogeneous porous media. In this study, removal of trichloroethene (TCE) with steam-air co-injection was investigated through a series of 2D sandbox experiments with different layered sand structures, and through numerical simulations. The results show that a layered structure with coarse sand, in which steam and air convection are relatively rapid, resulted in a higher removal rate and a larger removal ratio than those observed in an experiment using finer sand; however, the difference was not significant, and the removal ratios from three experiments ranged from 85% to 94%. Slight downward movement of TCE was observed for Experiment 1 (TCE initially in a fine sand zone encased in a coarse sand), while no such movement was observed for Experiment 2 (TCE initially in two fine sand layers encased in a coarse sand) or 3 (TCE initially in a silty sand zone encased in a coarse sand). Simulations show accumulation of TCE at the interface of the layered sands, which indicates a capillary barrier effect in restraining the downward movement of TCE. This effect is illustrated further by a numerical experiment with homogeneous coarse sand, in which continuous downward TCE movement to the bottom of the sandbox was simulated. Another numerical experiment with higher water saturation was also conducted. The results illustrate a complicated influence of water saturation on TCE removal in a layered sand structure. Published by Elsevier B.V.

  18. The concept of "compartment allergy": prilocaine injected into different skin layers

    Directory of Open Access Journals (Sweden)

    Wobser Marion

    2011-04-01

    Full Text Available Abstract We herein present a patient with delayed-type allergic hypersensitivity against prilocaine leading to spreading eczematous dermatitis after subcutaneous injections for local anesthesia with prilocaine. Prilocaine allergy was proven by positive skin testing and subcutaneous provocation, whereas the evaluation of other local anesthetics - among them lidocaine, articaine and mepivacaine - did not exhibit any evidence for cross-reactivity. Interestingly, our patient repeatedly tolerated strictly deep subcutaneous injection of prilocaine in provocation testing while patch and superficial subcutaneous application mounted strong allergic responses. We hypothesize, that lower DC density in deeper cutaneous compartments and/or different DC subsets exhibiting distinct functional immunomodulatory properties in the various layers of the skin may confer to the observed absence of clinical reactivity against prilocaine after deep subcutaneous injection. The term compartment allergy indicates that the route of allergen administration together with the targeted immunologic environment orchestrates on the immunologic outcome: overt T-cell mediated allergy or clinical tolerance.

  19. Viscous-shock-layer solutions with coupled radiation and ablation injection for earth entry

    Science.gov (United States)

    Gupta, Roop N.; Lee, Kam-Pui; Moos, James N.; Sutton, Kenneth

    1990-01-01

    Results are obtained for the forebody of a planetary exploration vehicle entering the earth's atmosphere. A viscous-shock-layer analysis is used assuming the flow to be laminar and in chemical equilibrium. Presented results include coupled radiation and ablation injection. This study further includes the effect of different transport and thermodynamic properties and radiation models. A Lewis number of 1.4 appears adequate for the radiation-dominated flows. Five velocities corresponding to different possible trajectory points at an altitude of 70 km have been further analyzed in detail. Sublimation and radiative equilibrium wall temperatures are employed for cases with and without coupled injection, respectively. For the cases analyzed here, the mass injection rates are small. However, the rates could become large if a lower altitude is used for aerobraking and/or the body size is increased. A comparison of the equilibrium results with finite-rate chemistry calculation shows the flowfield to be in chemical equilibrium.

  20. The thin layer technique and its application to electron microscopy

    International Nuclear Information System (INIS)

    Ranc, G.

    1957-10-01

    This work deals with the technique of thin layers obtained by evaporation under vacuum, in the thickness range extending from a few monoatomic layers to several hundred angstroms. The great theoretical and practical interest of these layers has, it is well known, given rise to many investigations from Faraday onwards. Within the necessarily restricted limits of this study, we shall approach the problem more particularly from the point of view of: - their production; - their use in electron microscopy. A critical appraisal is made, in the light of present-day knowledge, based on our personal experience and on an extensive bibliography which we have collected on the subject. (author) [fr

  1. Inter-layer Cooper pairing of two-dimensional electrons

    International Nuclear Information System (INIS)

    Inoue, Masahiro; Takemori, Tadashi; Yoshizaki, Ryozo; Sakudo, Tunetaro; Ohtaka, Kazuo

    1987-01-01

    The authors point out the possibility that the high transition temperatures of the recently discovered oxide superconductors are dominantly caused by the inter-layer Cooper pairing of two-dimensional electrons that are coupled through the exchange of three-dimensional phonons. (author)

  2. Electron beam deposition system causing little damage to organic layers

    Energy Technology Data Exchange (ETDEWEB)

    Yamada, Minoru [Research Center for Solar Energy Chemistry, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531 (Japan); Business Incubation Department, Hitachi Zosen Corporation, 2-11 Funamachi 2-Chome, Taisho-ku, Osaka 551-0022 (Japan); Matsumura, Michio, E-mail: matsu@chem.es.osaka-u.ac.jp [Research Center for Solar Energy Chemistry, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531 (Japan); Maeda, Yasuhiro [Business Incubation Department, Hitachi Zosen Corporation, 2-11 Funamachi 2-Chome, Taisho-ku, Osaka 551-0022 (Japan)

    2011-07-29

    Conditions for deposition of an aluminum (Al) layer on an organic light-emitting layer with an electron beam (EB) deposition system were optimized with respect to deposition rate and damage to organic layers. The damage to the organic layers was found to be mostly caused by X-rays emitted from a target bombarded with accelerated electrons. In order to decrease the X-ray intensity while maintaining a high deposition rate, we used an EB source which emits high-density EB at low acceleration voltage. In addition, we inserted a heat reflector and a sintered-carbon liner between the Al target and copper crucible to improve heat insulation. As a result, the voltage needed for the deposition of Al electrodes at a rate of about 8 nm/s was lowered from normal voltages of 2.0 kV or higher to as low as 1.5 kV. To reduce the number of electrons hitting the substrate, we set pole pieces near the target and an electron trap in the chamber. The devices on which Al electrodes were deposited with the EB system showed almost the same properties as those of devices on which the Al electrodes were deposited by a resistive-heating method.

  3. Spin injection into a two-dimensional electron gas using inter-digital-ferromagnetic contacts

    DEFF Research Database (Denmark)

    Hu, C.M.; Nitta, J.; Jensen, Ane

    2002-01-01

    We present a model that describes the spin injection across a single interface with two electrodes. The spin-injection rate across a typical hybrid junction made of ferromagnet (FM) and a two-dimensional electron gas (2DEG) is found at the percentage level. We perforin spin-injection-detection ex......-injection-detection experiment on devices with two ferromagnetic contacts on a 2DEG confined in an InAs quantum well. A spin-injection rate of 4.5% is estimated from the measured magnetoresistance....

  4. Optoelectronic devices, low temperature preparation methods, and improved electron transport layers

    KAUST Repository

    Eita, Mohamed S.; El, Labban Abdulrahman; Usman, Anwar; Beaujuge, Pierre; Mohammed, Omar F.

    2016-01-01

    An optoelectronic device such as a photovoltaic device which has at least one layer, such as an electron transport layer, which comprises a plurality of alternating, oppositely charged layers including metal oxide layers. The metal oxide can be zinc

  5. The enhanced electron injection by fluorinated tris-(8-hydroxy-quinolinato) aluminum derivatives in high efficient Si-anode OLEDs

    Energy Technology Data Exchange (ETDEWEB)

    Liu, N. [State Key Laboratory of Silicon Materials, MOE Key Laboratory of Macromolecule Synthesis and Functionalization, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Shi, M.M., E-mail: minminshi@zju.edu.c [State Key Laboratory of Silicon Materials, MOE Key Laboratory of Macromolecule Synthesis and Functionalization, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Li, Y.Z. [School of Physics, State Key Laboratory for Mesoscopic Physics, Peking University, Beijing 100871 (China); Shi, Y.W. [State Key Laboratory of Silicon Materials, MOE Key Laboratory of Macromolecule Synthesis and Functionalization, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Ran, G.Z.; Qin, G.G. [School of Physics, State Key Laboratory for Mesoscopic Physics, Peking University, Beijing 100871 (China); Wang, M.; Chen, H.Z. [State Key Laboratory of Silicon Materials, MOE Key Laboratory of Macromolecule Synthesis and Functionalization, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

    2011-02-15

    Fabrication of organic light-emitting diodes (OLEDs) and lasers on silicon substrates is a feasible route to integrate microelectronic chips with optical devices for telecommunications. However, the efficiency of Si-anode based OLEDs is restricted by the imbalance of hole-electron injection because a p-type Si anode owns better hole injection ability than ITO. We have used fluorinated tris-(8-hydroxy-quinolinato) aluminum (FAlq{sub 3}) derivatives to prepare Si-anode based OLEDs. We observed that, when tris-(5-fuloro-8-hydroxyquinolinato) aluminum (5FAlq{sub 3}) is used as the electron-transporting material instead of Alq{sub 3}, the cathode electron injection is enhanced due to its lower lowest unoccupied molecular orbital (LUMO) compared to the Alq{sub 3}. The device can keep the relative carrier balance even when a Si anode capable of stronger hole injection was used. Further optimization of the device structure by introducing 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) as a hole blocking layer showed significant increase in the device power efficiency from 0.029 to 0.462 lm/W. This indicates that use of fluorinated Alq{sub 3} derivatives is an effective way to improve the performance of Si-anode based OLEDs.

  6. Injection and propagation of a nonrelativistic electron beam and spacecraft charging

    International Nuclear Information System (INIS)

    Okuda, H.; Berchem, J.

    1987-05-01

    Two-dimensional numerical simulations have been carried out in order to study the injection and propagation of a nonrelativistic electron beam from a spacecraft into a fully ionized plasma in a magnetic field. Contrary to the earlier results in one-dimension, a high density electron beam whose density is comparable to the ambient density can propagate into a plasma. A strong radial electric field resulting from the net charges in the beam causes the beam electrons to spread radially reducing the beam density. When the injection current exceeds the return current, significant charging of the spacecraft is observed along with the reflection of the injected electrons back to the spacecraft. Recent data on the electron beam injection from the Spacelab 1 (SEPAC) are discussed

  7. Role of electron-electron scattering on spin transport in single layer graphene

    Directory of Open Access Journals (Sweden)

    Bahniman Ghosh

    2014-01-01

    Full Text Available In this work, the effect of electron-electron scattering on spin transport in single layer graphene is studied using semi-classical Monte Carlo simulation. The D’yakonov-P’erel mechanism is considered for spin relaxation. It is found that electron-electron scattering causes spin relaxation length to decrease by 35% at 300 K. The reason for this decrease in spin relaxation length is that the ensemble spin is modified upon an e-e collision and also e-e scattering rate is greater than phonon scattering rate at room temperature, which causes change in spin relaxation profile due to electron-electron scattering.

  8. Drag reduction mechanism by microbubble injection within a channel boundary layer

    International Nuclear Information System (INIS)

    Ling Zhen; Hassan, Y.

    2005-01-01

    In this study, the drag reduction due to microbubble injection in the boundary layer of a fully developed turbulent channel flow was investigated. Particle Image Velocimetry (PIV) techniques were taken. The effects of the presence of microbubbles in the boundary layer were assessed. A drag reduction of 38.4% was obtained with void fraction of 4.9%. The algorithms of wavelet auto-correlation maps were applied to the PIV velocity field measurement. Modifications in the wavelet auto-correlation maps due to the presence of microbubbles were studied and compared in three-dimensions. By using 3-D plotting routines and the wavelet auto-correlation maps, it can be deduced from this study that the microbubble injection within the boundary layer increases the turbulent energy of the streamwise velocity components of the large scale (large eddy size, low frequency) range and decreases the energy of the small scale (small eddy size, high frequency) range. The wavelet auto-correlation maps of the normal velocities indicate that the microbubble presence decrease the turbulent energy of normal velocity components for both the large scale (large eddy size, low frequency) and the small scale (small eddy size, high frequency) ranges. (authors)

  9. Fast electron beam charge injection and switching in dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Fitting, Hans-Joachim; Schreiber, Erik [Institute of Physics, University of Rostock, Universitaetsplatz 3, 18051 Rostock (Germany); Touzin, Matthieu [Laboratoire de Structure et Proprietes de l' Etat Solide, UMR CNRS 8008, Universite de Lille 1, 59655 Villeneuve d' Ascq (France)

    2011-04-15

    Basic investigations of secondary electrons (SE) relaxation and attenuation are made by means of Monte Carlo simulations using ballistic electron scattering and interactions with optical and acoustic phonons as well as impact ionization of valence band electrons. Then the electron beam induced selfconsistent charge transport and secondary electron emission in insulators are described by means of an electron-hole flight-drift model (FDM). Ballistic secondary electrons and holes, their attenuation and drift, as well as their recombination, trapping, and field- and temperature-dependent Poole-Frenkel detrapping are included. Whereas the initial switching-on of the secondary electron emission proceeds over milli-seconds due to long-lasting selfconsistent charging, the switching-off process occurs much faster, even over femto-seconds. Thus a rapid electron beam switching becomes possible with formation of ultra-short electron beam pulses offering an application in stroboscopic electron microscopy and spectroscopy. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Manipulating the electron distribution through a combination of electron injection and MacKenzie’s Maxwell Demon

    International Nuclear Information System (INIS)

    Yip, Chi-Shung; Hershkowitz, Noah

    2015-01-01

    Experiments on electron heating are performed in a biased hot filament-produced argon plasma. Electrons are confined by multi-dipole magnetic fields on the radial wall of the cylindrical chamber but not the planar end walls. Electron heating is provided by a combination of cold electron injection (Hershowitz N and Leung K N 1975 Appl. Phys. Lett. 26 607) and a MacKenzie Maxwell Demon (Mackenzie K R et al 1971 Appl. Phys. Lett. 18 529). This approach allows the manipulation of the electrons by introducing a depleted tail into the electron energy distribution function or by removing a depleted tail. It is found that the injected electrons mimic and thermalize with the electron species with the closest average energy or temperature. The effect of the injected electrons is optimal when they mimic the secondary electrons emitted from the wall instead of the degraded primary electrons. Both approaches combine to achieve increases in electron temperature T e from 0.67 to 2.8 eV, which was not significantly higher than using each approach alone. (paper)

  11. A theoretical study of mixing downstream of transverse injection into a supersonic boundary layer

    Science.gov (United States)

    Baker, A. J.; Zelazny, S. W.

    1972-01-01

    A theoretical and analytical study was made of mixing downstream of transverse hydrogen injection, from single and multiple orifices, into a Mach 4 air boundary layer over a flat plate. Numerical solutions to the governing three-dimensional, elliptic boundary layer equations were obtained using a general purpose computer program. Founded upon a finite element solution algorithm. A prototype three-dimensional turbulent transport model was developed using mixing length theory in the wall region and the mass defect concept in the outer region. Excellent agreement between the computed flow field and experimental data for a jet/freestream dynamic pressure ratio of unity was obtained in the centerplane region of the single-jet configuration. Poorer agreement off centerplane suggests an inadequacy of the extrapolated two-dimensional turbulence model. Considerable improvement in off-centerplane computational agreement occured for a multi-jet configuration, using the same turbulent transport model.

  12. First observations of acceleration of injected electrons in a laser plasma beatwave experiment

    International Nuclear Information System (INIS)

    Ebrahim, N.A.; Martin, F.; Bordeur, P.; Heighway, E.A.; Matte, J.P.; Pepin, H.; Lavigne, P.

    1986-01-01

    The first experimental observations of acceleration of injected electrons in a laser driven plasma beatwave are presented. The plasma waves were excited in an ionized gas jet, using a short pulse high intensity CO 2 laser with two collinearly propagating beams (at λ = 9.6 μm and 10.6 μm) to excite a fast wave (v/sub p/ = c). The source of electrons was a laser plasma produced on an aluminum slab target by a third, synchronized CO 2 laser beam. A double-focusing dipole magnet was used to energy select and inject electrons into the beatwave, and a second magnetic spectrograph was used to analyze the accelerated electrons. Electron acceleration was only observed when the appropriate resonant plasma density was produced (∼ 10 17 cm -3 ), the two laser lines were incident on the plasma, and electrons were injected into this plasma from an external source

  13. ELECTRON CLOUD AT COLLIMATOR AND INJECTION REGION OF THE SPALLATION NEUTRON SOURCE ACCUMULATOR RING

    International Nuclear Information System (INIS)

    WANG, L.; HSEUH, H.-C.; LEE, Y.Y.; RAPARIA, D.; WEI, J.; COUSINEAU, S.

    2005-01-01

    The beam loss along the Spallation Neutron Source's accumulator ring is mainly located at the collimator region and injection region. This paper studied the electron cloud build-up at these two regions with the three-dimension program CLOUDLAND

  14. Thin-layer electrochemistry of ferrocenylbenzene derivatives: Intramolecular electronic communication

    International Nuclear Information System (INIS)

    Wang, Michael C.P.; Li Yunchao; Merbouh, Nabyl; Yu, Hua-Zhong

    2008-01-01

    Three arylferrocene derivatives, ferrocenylbenzene (MFcB), 1,3-diferrocenylbenzene (DFcB), and 1,3,5-triferrocenylbenzene (TFcB), were prepared and their redox properties systematically explored by thin-layer cyclic voltammetry (CV) and differential-pulse voltammetry (DPV). In contrast to conventional CV measurements that produced only a single pair of redox waves for all three compounds, the thin-layer technique discriminated between the multistep electron-transfer processes of DFcB and TFcB. In particular, two and three pairs of symmetric peaks were observed, respectively, when CV curves were recorded at a graphite electrode coated with a DFcB-containing and a TFcB-containing thin film of nitrobenzene and immersed in aqueous sodium perchlorate solution. These results demonstrate that the ferrocenyl moieties attached to the meta-positions of a benzene ring communicate electronically with each other, as a result of their distinct face-to-face orientations

  15. Blocking layer modeling for temperature analysis of electron transfer ...

    African Journals Online (AJOL)

    In this article, we simulate thermal effects on the electron transfer rate from three quantum dots CdSe, CdS and CdTe to three metal oxides TiO2, SnO2 and ZnO2 in the presence of four blocking layers ZnS, ZnO, TiO2 and Al2O3, in a porous quantum dot sensitized solar cell (QDSSC) structure, using Marcus theory.

  16. Injection-limited electron current in a methanofullerene

    NARCIS (Netherlands)

    Duren, J.K.J. van; Mihailetchi, V.D.; Blom, P.W.M.; Woudenbergh, T. van; Hummelen, J.C.; Rispens, M.T.; Janssen, R.A.J.; Wienk, M.M.

    2003-01-01

    The dark current of bulk-heterojunction photodiodes consisting of a blend of a methanofullerene (PCBM) as n-type electron acceptor and a dialkoxy-(p-phenylene vinylene) (OC1C10-PPV) as a p-type electron donor sandwiched between electrodes with different work functions has been investigated. With

  17. Electron beam dosimetry for a thin-layer absorber irradiated by 300-keV electrons

    International Nuclear Information System (INIS)

    Kijima, Toshiyuki; Nakase, Yoshiaki

    1993-01-01

    Depth-dose distributions in thin-layer absorbers were measured for 300-keV electrons from a scanning-type irradiation system, the electrons having penetrated through a Ti-window and an air gap. Irradiations of stacks of cellulose triacetate(CTA) film were carried out using either a conveyor (i.e. dynamic irradiation) or fixed (i.e. static) irradiation. The sample was irradiated using various angles of incidence of electrons, in order to examine the effect of obliqueness of electron incidence at low-energy representative of routine radiation curing of thin polymeric or resin layers. Dynamic irradiation gives broader and shallower depth-dose distributions than static irradiation. Greater obliqueness of incident electrons gives results that can be explained in terms of broader and shallower depth-dose distributions. The back-scattering of incident electrons by a metal(Sn) backing material enhances the absorbed dose in a polymeric layer and changes the overall distribution. It is suggested that any theoretical estimations of the absorbed dose in thin layers irradiated in electron beam curing must be accomplished and supported by experimental data such as that provided by this investigation. (Author)

  18. Heavy Ion Injection Into Synchrotrons, Based On Electron String Ion Sources

    CERN Document Server

    Donets, E E; Syresin, E M

    2004-01-01

    A possibility of heavy ions injection into synchrotrons is discussed on the base of two novel ion sources, which are under development JINR during last decade: 1) the electron string ion source (ESIS), which is a modified version of a conventional electron beam ion source (EBIS), working in a reflex mode of operation, and 2) the tubular electron string ion source (TESIS). The Electron String Ion Source "Krion-2" (VBLHE, JINR, Dubna) with an applied confining magnetic field of 3 T was used for injection into the superconducting JINR synchrotron - Nuclotron and during this runs the source provided a high pulse intensity of the highly charged ion beams: Ar16+

  19. Controlling charge injection in organic electronic devices using self-assembled monolayers

    Science.gov (United States)

    Campbell, I. H.; Kress, J. D.; Martin, R. L.; Smith, D. L.; Barashkov, N. N.; Ferraris, J. P.

    1997-12-01

    We demonstrate control and improvement of charge injection in organic electronic devices by utilizing self-assembled monolayers (SAMs) to manipulate the Schottky energy barrier between a metal electrode and the organic electronic material. Hole injection from Cu electrodes into the electroluminescent conjugated polymer poly[2-methoxy,5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] was varied by using two conjugated-thiol based SAMs. The chemically modified electrodes were incorporated in organic diode structures and changes in the metal/polymer Schottky energy barriers and current-voltage characteristics were measured. Decreasing (increasing) the Schottky energy barrier improves (degrades) charge injection into the polymer.

  20. Calculation of eddy viscosity in a compressible turbulent boundary layer with mass injection and chemical reaction, volume 1. [theoretical analysis

    Science.gov (United States)

    Omori, S.

    1973-01-01

    The turbulent kinetic energy equation is coupled with boundary layer equations to solve the characteristics of compressible turbulent boundary layers with mass injection and combustion. The Reynolds stress is related to the turbulent kinetic energy using the Prandtl-Wieghardt formulation. When a lean mixture of hydrogen and nitrogen is injected through a porous plate into the subsonic turbulent boundary layer of air flow and ignited by external means, the turbulent kinetic energy increases twice as much as that of noncombusting flow with the same mass injection rate of nitrogen. The magnitudes of eddy viscosity between combusting and noncombusting flows with injection, however, are almost the same due to temperature effects, while the distributions are different. The velocity profiles are significantly affected by combustion; that is, combustion alters the velocity profile as if the mass injection rate is increased, reducing the skin-friction as a result of a smaller velocity gradient at the wall. If pure hydrogen as a transpiration coolant is injected into a rocket nozzle boundary layer flow of combustion products, the temperature drops significantly across the boundary layer due to the high heat capacity of hydrogen. At a certain distance from the wall, hydrogen reacts with the combustion products, liberating an extensive amount of heat. The resulting large increase in temperature reduces the eddy viscosity in this region.

  1. Electron molecular beam epitaxy: Layer-by-layer growth of complex oxides via pulsed electron-beam deposition

    International Nuclear Information System (INIS)

    Comes, Ryan; Liu Hongxue; Lu Jiwei; Gu, Man; Khokhlov, Mikhail; Wolf, Stuart A.

    2013-01-01

    Complex oxide epitaxial film growth is a rich and exciting field, owing to the wide variety of physical properties present in oxides. These properties include ferroelectricity, ferromagnetism, spin-polarization, and a variety of other correlated phenomena. Traditionally, high quality epitaxial oxide films have been grown via oxide molecular beam epitaxy or pulsed laser deposition. Here, we present the growth of high quality epitaxial films using an alternative approach, the pulsed electron-beam deposition technique. We demonstrate all three epitaxial growth modes in different oxide systems: Frank-van der Merwe (layer-by-layer); Stranski-Krastanov (layer-then-island); and Volmer-Weber (island). Analysis of film quality and morphology is presented and techniques to optimize the morphology of films are discussed.

  2. Measurements of Skin Friction of the Compressible Turbulent Boundary Layer on a Cone with Foreign Gas Injection

    Science.gov (United States)

    Pappas, Constantine C.; Ukuno, Arthur F.

    1960-01-01

    Measurements of average skin friction of the turbulent boundary layer have been made on a 15deg total included angle cone with foreign gas injection. Measurements of total skin-friction drag were obtained at free-stream Mach numbers of 0.3, 0.7, 3.5, and 4.7 and within a Reynolds number range from 0.9 x 10(exp 6) to 5.9 x 10(exp 6) with injection of helium, air, and Freon-12 (CCl2F2) through the porous wall. Substantial reductions in skin friction are realized with gas injection within the range of Mach numbers of this test. The relative reduction in skin friction is in accordance with theory-that is, the light gases are most effective when compared on a mass flow basis. There is a marked effect of Mach number on the reduction of average skin friction; this effect is not shown by the available theories. Limited transition location measurements indicate that the boundary layer does not fully trip with gas injection but that the transition point approaches a forward limit with increasing injection. The variation of the skin-friction coefficient, for the lower injection rates with natural transition, is dependent on the flow Reynolds number and type of injected gas; and at the high injection rates the skin friction is in fair agreement with the turbulent boundary layer results.

  3. Solution-processed high-LUMO-level polymers in n-type organic field-effect transistors: a comparative study as a semiconducting layer, dielectric layer, or charge injection layer

    International Nuclear Information System (INIS)

    Liu, Chuan; Xu, Yong; Liu, Xuying; Minari, Takeo; Sirringhaus, Henning; Noh, Yong-Young

    2015-01-01

    In solution-processed organic field-effect transistors (OFETs), the polymers with high level of lowest unoccupied molecular orbitals (LUMOs, > −3.5 eV) are especially susceptible to electron-trapping that causes low electron mobility and strong instability in successive operation. However, the role of high-LUMO-level polymers could be different depending on their locations relative to the semiconductor/insulator interface, or could even possibly benefit the device in some cases. We constructed unconventional polymer heterojunction n-type OFETs to control the location of the same polymer with a high LUMO level, to be in, under, or above the accumulation channel. We found that although the devices with the polymer in the channel suffer from dramatic instability, the same polymer causes much less instability when it acts as a dielectric modification layer or charge injection layer. Especially, it may even improve the device performance in the latter case. This result helps to improve our understanding of the electron-trapping and explore the value of these polymers in OFETs. (invited article)

  4. Techniques For Injection Of Pre-Charaterized Dust Into The Scrape Off Layer Of Fusion Plasma

    International Nuclear Information System (INIS)

    Roquemore, A.L.; John, B.; Friesen, F.; Hartzfeld, K.; Mansfield, D.K.

    2011-01-01

    Introduction of micron-sized dust into the scrape-off layer (SOL) of a plasma has recently found many applications aimed primarily at determining dust behavior in future fusion reactors. The dust particles are typically composed of materials intrinsic to a fusion reactor. On DIII-D and TEXTOR carbon dust has been introduced into the SOL using a probe inserted from below into the divertor region. On NSTX, both Li and tungsten dust have been dropped from the top of the machine into the SOL throughout the duration of a discharge, by utilizing a vibrating piezoelectric based particle dropper. The original particle dropper was developed to inject passivated Li powder ∼ 40 μm in diameter into the SOL to enhance plasma performance. A simplified version of the dropper was developed to introduce trace amounts of tungsten powder for only a few discharges, thus not requiring a large powder reservoir. The particles emit visible light from plasma interactions and can be tracked by either spectroscopic means or by fast frame rate visible cameras. This data can then be compared with dust transport codes such as DUSTT to make predictions of dust behavior in next-step devices such as ITER. For complete modeling results, it is desired to be able to inject pre-characterized dust particles in the SOL at various known poloidal locations, including near the vessel midplane. Purely mechanical methods of injecting particles are presently being studied using a modified piezoelectric-based powder dropper as a particle source and one of several piezo-based transducers to deflect the particles into the SOL. Vibrating piezo fans operating at 60 Hz with a deflection of ±2.5 cm can impart a significant horizontal boost in velocity. The highest injection velocities are expected from rotating paddle wheels capable of injecting particles at 10's of meters per second depending primarily on the rotation velocity and diameter of the wheel. Several injection concepts have been tested and will be

  5. Electrons in the boundary layers near the dayside magnetopause

    International Nuclear Information System (INIS)

    Hall, D.S.; Chaloner, C.P.; Bryant, D.A.; Lepine, D.R.; Tritakis, V.P.

    1990-10-01

    Entry of heated solar-wind plasma into the magnetosphere is examined using electron distributions. In particular, the angular structure of the electron distributions is studied within the transition region separating the magnetosheath from the inner magnetosphere. The measurements suggest that electrons in the outer part of the transition region originate in the magnetosheath, whilst the population closer to the Earth consists of electrons from the magnetosphere combined with an energized magnetosheath component. This energized component contains ''counterstreaming'' electrons, which are confined to directions closely parallel and anti-parallel to the magnetic field direction. The possibilities, that the energization of the counterstreaming electrons is cumulatively gained from either waves, electric fields perpendicular to the magnetic field, or quasi-Fermi acceleration, are discussed. It is not possible to identify the topology of the magnetic fields of the outer part of the region, but there is strong evidence that the inner part is on closed magnetic field lines, which map to the dayside auroral zone. The outer part of the transition region is a plasma depletion/magnetic-field compression layer. The structure of the transition region is similar to that surrounding flux transfer events, which leads to the deduction that the plasma and field signatures of flux transfer events may be the result of displacement of the transition region earthwards. Cases where the displacement is such that the field maximum of the depletion/compression region is encountered, may well explain ''crater'' flux transfer event signatures. (author)

  6. Injection of an electron beam into a plasma and spacecraft charging

    International Nuclear Information System (INIS)

    Okuda, H.; Kan, J.R.

    1987-01-01

    Injection of a nonrelativistic electron beam into a fully ionized plasma from a spacecraft including the effect of charging has been studied using a one-dimensional particle simulation model. It is found that the spacecraft charging remains negligible and the beam can propagate into a plasma, if the beam density is much smaller than the ambient density. When the injection current is increased by increasing the beam density, significant spacecraft charging takes place and the reflection of beam electrons back to the spacecraft reduces the beam current significantly. On the other hand, if the injection current is increased by increasing the beam energy, spacecraft charging remains negligible and a beam current much larger than the thermal return current can be injected. It is shown that the electric field caused by the beam--plasma instability accelerates the ambient electrons toward the spacecraft thereby enhancing the return current

  7. Slow electron acoustic double layer (SEADL) structures in bi-ion plasma with trapped electrons

    Science.gov (United States)

    Shan, Shaukat Ali; Imtiaz, Nadia

    2018-05-01

    The properties of ion acoustic double layer (IADL) structures in bi-ion plasma with electron trapping are investigated by using the quasi-potential analysis. The κ-distributed trapped electrons number density expression is truncated to some finite order of the electrostatic potential. By utilizing the reductive perturbation method, a modified Schamel equation which describes the evolution of the slow electron acoustic double layer (SEADL) with the modified speed due to the presence of bi-ion species is investigated. The Sagdeev-like potential has been derived which accounts for the effect of the electron trapping and superthermality in a bi-ion plasma. It is found that the superthermality index, the trapping efficiency of electrons, and ion to electron temperature ratio are the inhibiting parameters for the amplitude of the slow electron acoustic double layers (SEADLs). However, the enhanced population of the cold ions is found to play a supportive role for the low frequency DLs in bi-ion plasmas. The illustrations have been presented with the help of the bi-ion plasma parameters in the Earth's ionosphere F-region.

  8. Extremely short relativistic-electron-bunch generation in the laser wakefield via novel bunch injection scheme

    NARCIS (Netherlands)

    Khachatryan, A.G.; van Goor, F.A.; Boller, Klaus J.; Reitsma, A.J.W.; Jaroszynski, D.A.

    2004-01-01

    Recently a new electron-bunch injection scheme for the laser wakefield accelerator has been proposed [JETP Lett. 74, 371 (2001); Phys. Rev. E 65, 046504 (2002)]. In this scheme, a low energy electron bunch, sent in a plasma channel just before a high-intensity laser pulse, is trapped in the laser

  9. To what extent can charge localization influence electron injection efficiency at graphene-porphyrin interfaces?

    KAUST Repository

    Parida, Manas R.

    2015-04-28

    Controlling the electron transfer process at donor- acceptor interfaces is a research direction that has not yet seen much progress. Here, with careful control of the charge localization on the porphyrin macrocycle using β -Cyclodextrin as an external cage, we are able to improve the electron injection efficiency from cationic porphyrin to graphene carboxylate by 120% . The detailed reaction mechanism is also discussed.

  10. Numerical study on formation process of helical nonneutral plasmas using electron injection from outside magnetic surfaces

    International Nuclear Information System (INIS)

    Nakamura, Kazutaka; Himura, Haruhiko; Masamune, Sadao; Sanpei, Akio; Isobe, Mitsutaka

    2009-01-01

    In order to investigate the formation process of helical nonneutral plasmas, we calculate the orbits of electron injected in the stochastic magnetic field when the closed helical magnetic surfaces is correspond with the equipotential surfaces. Contrary to the experimental observation, there are no electrons inward penetrating. (author)

  11. Device characteristics of organic light-emitting diodes based on electronic structure of the Ba-doped Alq3 layer.

    Science.gov (United States)

    Lim, Jong Tae; Kim, Kyung Nam; Yeom, Geun Young

    2009-12-01

    Organic light-emitting diodes (OLEDs) with a Ba-doped tris(8-quinolinolato)aluminum(III) (Alq3) layer were fabricated to reduce the barrier height for electron injection and to improve the electron conductivity. In the OLED consisting of glass/ITO/4,4',4"-tris[2-naphthylphenyl-1-phenylamino]triphenylamine (2-TNATA, 30 nm)/4,4'-bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl (NPB, 18 nm)/Alq3 (42 nm)/Ba-doped Alq3 (20 nm, x%: x = 0, 10, 25, and 50)/Al (100 nm), the device with the Alq3 layer doped with 10% Ba showed the highest light out-coupling characteristic. However, as the Ba dopant concentration was increased from 25% to 50%, this device characteristic was largely reduced. The characteristics of these devices were interpreted on the basis of the chemical reaction between Ba and Alq3 and the electron injection property by analyzing the electronic structure of the Ba-doped Alq3 layer. At a low Ba doping of 10%, mainly the Alq3 radical anion species was formed. In addition, the barrier height for electron injection in this layer was decreased to 0.6 eV, when compared to the pristine Alq3 layer. At a high Ba doping of 50%, the Alq3 molecules were severely decomposed. When the Ba dopant concentration was changed, the light-emitting characteristics of the devices were well coincided with the formation mechanism of Alq3 radical anion and Alq3 decomposition species.

  12. The feasibility of using solution-processed aqueous La2O3 as effective hole injection layer in organic light-emitting diode

    Science.gov (United States)

    Zhang, Yan; Li, Wanshu; Zhang, Ting; Yang, Bo; Zheng, Qinghong; Xu, Jiwen; Wang, Hua; Wang, Lihui; Zhang, Xiaowen; Wei, Bin

    2018-01-01

    Low-cost and scalable manufacturing boosts organic electronic devices with all solution process. La2O3 powders and corresponding aqueous solutions are facilely synthesized. Atomic force microscopy and scanning electron microscopy measurements show that solution-processed La2O3 behaves superior film morphology. X-ray diffraction and X-ray photoelectron spectroscopy measurements verify crystal phase and typical La signals. In comparison with the most widely-used hole injection layers (HILs) of MoOx and poly(ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS), enhanced luminous efficiency is observed in organic light-emitting diode (OLED) using solution-processed La2O3 HIL. Current-voltage, impedance-voltage and phase angle-voltage transition curves clarify that solution-processed La2O3 behaves nearly comparable hole injection capacity to MoOx and PEDOT:PSS, and favorably tailors carrier balance. Moreover, the hole injection mechanism of solution-processed La2O3 is proven to be predominantly controlled by Fowler-Nordheim tunneling process and the hole injection barrier height between ITO and NPB via La2O3 interlayer is estimated to be 0.098 eV. Our experiments provide a feasible application of La2O3 in organic electronic devices with solution process.

  13. Dissipation of post-disruption runaway electron plateaus by shattered pellet injection in DIII-D

    Science.gov (United States)

    Shiraki, D.; Commaux, N.; Baylor, L. R.; Cooper, C. M.; Eidietis, N. W.; Hollmann, E. M.; Paz-Soldan, C.; Combs, S. K.; Meitner, S. J.

    2018-05-01

    We report on the first demonstration of dissipation of fully avalanched post-disruption runaway electron (RE) beams by shattered pellet injection in the DIII-D tokamak. Variation of the injected species shows that dissipation depends strongly on the species mixture, while comparisons with massive gas injection do not show a significant difference between dissipation by pellets or by gas, suggesting that the shattered pellet is rapidly ablated by the relativistic electrons before significant radial penetration into the runaway beam can occur. Pure or dominantly neon injection increases the RE current dissipation through pitch-angle scattering due to collisions with impurity ions. Deuterium injection is observed to have the opposite effect from neon, reducing the high-Z impurity content and thus decreasing the dissipation, and causing the background thermal plasma to completely recombine. When injecting mixtures of the two species, deuterium levels as low as  ∼10% of the total injected atoms are observed to adversely affect the resulting dissipation, suggesting that complete elimination of deuterium from the injection may be important for optimizing RE mitigation schemes.

  14. Electronic self-organization in layered transition metal dichalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Ritschel, Tobias

    2015-10-30

    The interplay between different self-organized electronically ordered states and their relation to unconventional electronic properties like superconductivity constitutes one of the most exciting challenges of modern condensed matter physics. In the present thesis this issue is thoroughly investigated for the prototypical layered material 1T-TaS{sub 2} both experimentally and theoretically. At first the static charge density wave order in 1T-TaS{sub 2} is investigated as a function of pressure and temperature by means of X-ray diffraction. These data indeed reveal that the superconductivity in this material coexists with an inhomogeneous charge density wave on a macroscopic scale in real space. This result is fundamentally different from a previously proposed separation of superconducting and insulating regions in real space. Furthermore, the X-ray diffraction data uncover the important role of interlayer correlations in 1T-TaS{sub 2}. Based on the detailed insights into the charge density wave structure obtained by the X-ray diffraction experiments, density functional theory models are deduced in order to describe the electronic structure of 1T-TaS{sub 2} in the second part of this thesis. As opposed to most previous studies, these calculations take the three-dimensional character of the charge density wave into account. Indeed the electronic structure calculations uncover complex orbital textures, which are interwoven with the charge density wave order and cause dramatic differences in the electronic structure depending on the alignment of the orbitals between neighboring layers. Furthermore, it is demonstrated that these orbital-mediated effects provide a route to drive semiconductor-to-metal transitions with technologically pertinent gaps and on ultrafast timescales. These results are particularly relevant for the ongoing development of novel, miniaturized and ultrafast devices based on layered transition metal dichalcogenides. The discovery of orbital textures

  15. Experiments on the injection, confinement, and ejection of electron clouds in a magnetic mirror

    International Nuclear Information System (INIS)

    Eckhouse, S.; Fisher, A.; Rostoker, N.

    1978-01-01

    A cloud of (5 to 10 keV) electrons is injected into a magnetic mirror field. The magnetic field rises in 40--120 μsec to a maximum of 10 kG. Two methods of injection were tried: In the first, the injector is located at the mirror midplane and electrons are injected perpendicular to the magnetic field lines. In the second scheme, the injector is located near the mirror maximum. Up to about 10 11 electrons were trapped in both schemes with a mean kinetic energy of 0.3 MeV. Measured confinement time is limited only by the magnetic field decay time. The compressed electron cloud executes electrostatic oscillations. The frequency of the oscillation is proportional to the number of electrons trapped, and it is independent of the value of the magnetic field and the initial electron energy. The electron cloud was ejected along the mirror axis and properties of the ejected electron cloud were measured by x-ray pulses from bremstrahlung of electrons on the vacuum system wall and by collecting electrons on a Faraday cup

  16. Characteristics of post-disruption runaway electrons with impurity pellet injection

    International Nuclear Information System (INIS)

    Kawano, Yasunori; Nakano, Tomohide; Isayama, Akihiko; Asakura, Nobuyuki; Tamai, Hiroshi; Kubo, Hirotaka; Takenaga, Hidenobu; Bakhtiari, Mohammad; Ide, Shunsuke; Kondoh, Takashi; Hatae, Takaki

    2005-01-01

    Characteristics of post-disruption runaway electrons with impurity pellet injection were investigated for the first time using the JT-60U tokamak device. A clear deposition of impurity neon ice pellets was observed in a post-disruption runaway plasma. The pellet ablation was attributed to the energy deposition of relativistic runaway electrons in the pellet. A high normalized electron density was stably obtained with n e bar /n GW ∼2.2. Effects of prompt exhaust of runaway electrons and reduction of runaway plasma current without large amplitude MHD activities were found. One possible explanation for the basic behavior of runaway plasma current is that it follows the balance of avalanche generation of runaway electrons and slowing down predicted by the Andersson-Helander model, including the combined effect of collisional pitch angle scattering and synchrotron radiation. Our results suggested that the impurity pellet injection reduced the energy of runaway electrons in a stepwise manner. (author)

  17. Anomalous magnetotransport of a surface electron layer above liquid helium

    International Nuclear Information System (INIS)

    Grigor'ev, V.N.; Kovdrya, Yu.Z.; Nikolaenko, V.A.; Kirichek, O.I.; Shcherbachenko, R.I.

    1991-01-01

    The magnetoconductivity σ xx of a surface electron layer above liquid helium has been measured at temperatures between 0.5-1.6 K, for concentrations up to about 4x10 8 cm -2 , in magnetic fields up to 25 kOe. As was observed, σ xx first decreases with lowering temperature, then has a minimum and at T xy , the earlier ascertained anomalous behaviour of the magnetoresistance ρ xx taken into consideration. The calculated dependence of ρ xx on T is in satisfactory agreement with the anomalous dependence ρ xx (T) found earlier by experiment

  18. Designing a Prototype LPG Injection Electronic Control Unit for a Carburetted Gasoline Engine

    Directory of Open Access Journals (Sweden)

    Barış ERKUŞ

    2015-07-01

    Full Text Available In this study, the originally carburetted gasoline engine was converted to gas-phase liquefied petroleum gas (LPG injection engine by using an after market LPG conversion kit's components except the electronic control unit (ECU. Instead of after market LPG injection ECU, the ECU which was designed considering the effects of  electromagnetic interference (EMI, was used for controlling injection. The designed ECU was tested in terms of EMI while the engine was being run and it was detected that the EMI noises could be suppressed as possible by taken measures. Designed ECU was used in performance tests at different engine conditions and the results obtained with LPG injection were compared with the results obtained with LPG carburetion. According to the performance test results, LPG injection ECU designed in this study could help to achieve low exhaust emissions and high engine performance.  

  19. Atomic layer deposition of dielectrics for carbon-based electronics

    Energy Technology Data Exchange (ETDEWEB)

    Kim, J., E-mail: jiyoung.kim@utdallas.edu; Jandhyala, S.

    2013-11-01

    Carbon based nanomaterials like nanotubes and graphene have emerged as future generation electronic materials for device applications because of their interesting properties such as high-mobility and ability to carry high-current densities compared to conventional semiconductor materials like silicon. Therefore, there is a need to develop techniques to integrate robust gate dielectrics with high-quality interfaces for these materials in order to attain maximum performance. To date, a variety of methods including physical vapor deposition, atomic layer deposition (ALD), physical assembly among others have been employed in order to integrate dielectrics for carbon nanotube and graphene based field-effect transistors. Owing to the difficulty in wetting pristine surfaces of nanotubes and graphene, most of the ALD methods require a seeding technique involving non-covalent functionalization of their surfaces in order to nucleate dielectric growth while maintaining their intrinsic properties. A comprehensive review regarding the various dielectric integration schemes for emerging devices and their limitations with respect to ALD based methods along with a future outlook is provided. - Highlights: • We introduce various dielectric integration schemes for carbon-based devices. • Physical vapor deposition methods tend to degrade device performance. • Atomic layer deposition on pristine surfaces of graphene and nanotube is difficult. • We review different seeding techniques for atomic layer deposition of dielectrics. • Compare the performance of graphene top-gate devices with different dielectrics.

  20. Atomic layer deposition of dielectrics for carbon-based electronics

    International Nuclear Information System (INIS)

    Kim, J.; Jandhyala, S.

    2013-01-01

    Carbon based nanomaterials like nanotubes and graphene have emerged as future generation electronic materials for device applications because of their interesting properties such as high-mobility and ability to carry high-current densities compared to conventional semiconductor materials like silicon. Therefore, there is a need to develop techniques to integrate robust gate dielectrics with high-quality interfaces for these materials in order to attain maximum performance. To date, a variety of methods including physical vapor deposition, atomic layer deposition (ALD), physical assembly among others have been employed in order to integrate dielectrics for carbon nanotube and graphene based field-effect transistors. Owing to the difficulty in wetting pristine surfaces of nanotubes and graphene, most of the ALD methods require a seeding technique involving non-covalent functionalization of their surfaces in order to nucleate dielectric growth while maintaining their intrinsic properties. A comprehensive review regarding the various dielectric integration schemes for emerging devices and their limitations with respect to ALD based methods along with a future outlook is provided. - Highlights: • We introduce various dielectric integration schemes for carbon-based devices. • Physical vapor deposition methods tend to degrade device performance. • Atomic layer deposition on pristine surfaces of graphene and nanotube is difficult. • We review different seeding techniques for atomic layer deposition of dielectrics. • Compare the performance of graphene top-gate devices with different dielectrics

  1. Ultra-low emittance electron beam generation using ionization injection in a plasma beatwave accelerator

    Science.gov (United States)

    Schroeder, Carl; Benedetti, Carlo; Esarey, Eric; Leemans, Wim

    2017-10-01

    Ultra-low emittance beams can be generated using ionization injection of electrons into a wakefield excited by a plasma beatwave accelerator. This all-optical method of electron beam generation uses three laser pulses of different colors. Two long-wavelength laser pulses, with frequency difference equal to the plasma frequency, resonantly drive a plasma wave without fully ionizing a gas. A short-wavelength injection laser pulse (with a small ponderomotive force and large peak electric field), co-propagating and delayed with respect to the beating long-wavelength lasers, ionizes a fraction of the remaining bound electrons at a trapped wake phase, generating an electron beam that is accelerated in the wakefield. Using the beating of long-wavelength pulses to generate the wakefield enables atomically-bound electrons to remain at low ionization potentials, reducing the required amplitude of the ionization pulse, and, hence, the initial transverse momentum and emittance of the injected electrons. An example is presented using two lines of a CO2 laser to form a plasma beatwave accelerator to drive the wake and a frequency-doubled Ti:Al2O3 laser for ionization injection. Supported by the U.S. Department of Energy under Contract No. DE-AC02-05CH11231.

  2. Electron tunneling in tantalum surface layers on niobium

    International Nuclear Information System (INIS)

    Ruggiero, S.T.; Track, E.K.; Prober, D.E.; Arnold, G.B.; DeWeert, M.J.

    1986-01-01

    We have performed electron tunneling measurements on tantalum surface layers on niobium. The tunnel junctions comprise 2000-A-circle Nb base electrodes with 10--100-A-circle in situ--deposited Ta overlayers, an oxide barrier, and Ag, Pb, or Pb-Bi alloy counterelectrodes. The base electrodes were prepared by ion-beam sputter deposition. The characteristics of these junctions have been studied as a function of Ta-layer thickness. These include the critical current, bound-state energy, phonon structure, and oxide barrier shape. We have compared our results for the product I/sub c/R versus tantalum-layer thickness with an extended version of the Gallagher theory which accounts for both the finite mean free path in the Ta overlayers and suppression of the I/sub c/R product due to strong-coupling effects. Excellent fits to the data yield a value of the intrinsic scattering probability for electrons at the Ta/Nb interface of r 2 = 0.01. This is consistent with the value expected from simple scattering off the potential step created by the difference between the Fermi energies of Ta and Nb. We have found a universal empirical correlation in average barrier height phi-bar and width s in the form phi-bar = 6 eV/(s-10 A-circle) for measured junctions which holds both for our data and results for available data in the literature for oxide-barrier junctions. The latter are composed of a wide variety of base and counterelectrode materials. These results are discussed in the general context of oxide growth and compared with results for artificial tunnel barriers

  3. Novel multi-chromophor light absorber concepts for DSSCs for efficient electron injection

    Energy Technology Data Exchange (ETDEWEB)

    Schuetz, Robert; Strothkaemper, Christian; Bartelt, Andreas; Hannappel, Thomas; Eichberger, Rainer [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Fasting, Carlo [Institut fuer Organische Chemie, Freie Universitaet Berlin, Takustrasse 3, 14195 Berlin (Germany); Thomas, Inara [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Institut fuer Organische Chemie, Freie Universitaet Berlin, Takustrasse 3, 14195 Berlin (Germany)

    2011-07-01

    Dye sensitized solar cells (DSSCs) operate by injecting electrons from the excited state of a light-harvesting dye into the continuum of conduction band states of a wide bandgap semiconductor. The light harvesting efficiency of pure organic dyes is limited by a narrow spectral electronic transition. A beneficial broad ground state absorption in the VIS region can be achieved by applying a single molecular dye system with multiple chromophors involving a Foerster resonance energy transfer (FRET) mechanism for an efficient electron injection. A model donor acceptor dye system capable for FRET chemically linked to colloidal TiO{sub 2} and ZnO nanorod surfaces was investigated in UHV environment. We used VIS/NIR femtosecond transient absorption spectroscopy and optical pump terahertz probe spectroscopy to study the charge injection dynamics of the antenna system. Different chromophors attached to a novel scaffold/anchor system connecting the organic absorber unit to the metal oxide semiconductor were probed.

  4. Electron injection from graphene quantum dots to poly(amido amine) dendrimers

    Energy Technology Data Exchange (ETDEWEB)

    Lin, T. N.; Inciong, M. R.; Santiago, S. R.; Shu, G. W.; Yuan, C. T.; Shen, J. L., E-mail: jlshen@cycu.edu.tw [Department of Physics, Center for Nanotechnology, and Center for Biomedical Technology, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Kao, C. W. [Master Program in Nanotechnology at CYCU, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Yeh, J. M.; Chen-Yang, Y. W. [Department of Chemistry, Center for Nanotechnology, and Center for Biomedical Technology, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China)

    2016-04-18

    The steady-state and time-resolved photoluminescence (PL) are used to study the electron injection from graphene quantum dots (GQDs) to poly(amido amine) (PAMAM) dendrimers. The PL is enhanced by depositing GQDs on the surfaces of the PAMAM dendrimers. The maximum enhancement of PL with a factor of 10.9 is achieved at a GQD concentration of 0.9 mg/ml. The dynamics of PL in the GQD/PAMAM composite are analyzed, evidencing the existence of electron injection. On the basis of Kelvin probe measurements, the electron injection from the GQDs to the PAMAM dendrimers is accounted for by the work function difference between them.

  5. Reduction of birefringence in a skin-layer of injection molded polymer strips using CO{sub 2} laser irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Kurosaki, Yasuo; Satoh, Isao; Saito, Takushi [Tokyo Inst. of Tech. (Japan). Dept. of Mechanical Intelligent Systems Engineering

    1995-12-31

    Injection molding of polymers is currently utilized for numerous industrial applications. Because of high productivity and stable quality of molded products, the injection-molding process makes the production costs lower, and therefore, is expected to spread more widely in the future. This paper deals with a technique for improving the optical quality of injection molded polymer products using radiative heating. The birefringence frozen in a skin-layer of the molded part was reduced by CO{sub 2} laser heating, and the efficiency of this technique was investigated experimentally. Namely, a simple numerical calculation was performed to estimate the heating efficiency of CO{sub 2} laser in the polymer, effects of radiation heating on the skin-layer of the molded polymer were observed by using a mold with transparent windows, and the residual birefringence frozen in the final molded specimen was measured. The results clearly showed that the birefringence in the skin-layer of injection molded polymer strips was reduced with CO{sub 2} laser heating. The authors believe that the proposed method for reducing the birefringence frozen in injection-molded polymer products is suitable for practical molding, because process time required for the injection-molding is only slightly increased with this method.

  6. Parameter Dependence of Inward Diffusion on Injected Electrons in Helical Non-Neutral Plasmas

    International Nuclear Information System (INIS)

    Wakabayashi, H.; Himura, H.; Fukao, M.; Yoshida, Z.

    2003-01-01

    Experimental studies on an electron injection into a helical magnetic field and characteristics of non-neutral plasmas have been performed. It is found that the space potential φs has a weak dependence on the injection angle except for a narrow 'window' region in which φs significantly drops. A calculation shows that because of the electric field Eg of the electron gun (e-gun), the emitted electrons are launched quasi-parallel to the helical magnetic field B, regardless of α. This seems to agree with the observation. The 'window' seen in the data may be attributed to an current-driven instability which might result in the insufficient electron penetration or the degradation of electron confinement in the magnetic surface

  7. Investigating the effect of in ovo injection of silver nanoparticles on fat uptake and development in broiler and layer hatchlings

    DEFF Research Database (Denmark)

    Pineda, Lane Manalili; Chwalibog, André; Sawosz, Ewa

    2012-01-01

    consumption, CO2 production, and heat production, HP), fat uptake, and the development of broiler and layer hatchlings. AgNano concentrations (50, 75, and 100¿mg/kg) were injected in ovo at day 1 of incubation to different breeds of broiler and layer chicken embryos. Oxygen consumption and subsequently FU did......Nano affected metabolic rate and FU; however, it did not influence the development of hatchlings. This suggests that in ovo injection of AgNano reduces the need to use yolk fat as an energy source during embryonic development and consequently the remaining fat in the residual yolk sac may provide a potent...

  8. Electrogenerated chemiluminescence induced by sequential hot electron and hole injection into aqueous electrolyte solution

    Energy Technology Data Exchange (ETDEWEB)

    Salminen, Kalle; Kuosmanen, Päivi; Pusa, Matti [Aalto University, Department of Chemistry, Laboratory of Analytical Chemistry, P.O. Box 16100, FI-00076 Aalto (Finland); Kulmala, Oskari [University of Helsinki, Department of Physics, P.O. Box 64, FI-00014 (Finland); Håkansson, Markus [Aalto University, Department of Chemistry, Laboratory of Analytical Chemistry, P.O. Box 16100, FI-00076 Aalto (Finland); Kulmala, Sakari, E-mail: sakari.kulmala@aalto.fi [Aalto University, Department of Chemistry, Laboratory of Analytical Chemistry, P.O. Box 16100, FI-00076 Aalto (Finland)

    2016-03-17

    Hole injection into aqueous electrolyte solution is proposed to occur when oxide-coated aluminum electrode is anodically pulse-polarized by a voltage pulse train containing sufficiently high-voltage anodic pulses. The effects of anodic pulses are studied by using an aromatic Tb(III) chelate as a probe known to produce intensive hot electron-induced electrochemiluminescence (HECL) with plain cathodic pulses and preoxidized electrodes. The presently studied system allows injection of hot electrons and holes successively into aqueous electrolyte solutions and can be utilized in detecting electrochemiluminescent labels in fully aqueous solutions, and actually, the system is suggested to be quite close to a pulse radiolysis system providing hydrated electrons and hydroxyl radicals as the primary radicals in aqueous solution without the problems and hazards of ionizing radiation. The analytical power of the present excitation waveforms are that they allow detection of electrochemiluminescent labels at very low detection limits in bioaffinity assays such as in immunoassays or DNA probe assays. The two important properties of the present waveforms are: (i) they provide in situ oxidation of the electrode surface resulting in the desired oxide film thickness and (ii) they can provide one-electron oxidants for the system by hole injection either via F- and F{sup +}-center band of the oxide or by direct hole injection to valence band of water at highly anodic pulse amplitudes. - Highlights: • Hot electrons injected into aqueous electrolyte solution. • Generation of hydrated electrons. • Hole injection into aqueous electrolyte solution. • Generation of hydroxyl radicals.

  9. Study of electron temperature evolution during sawtoothing and pellet injection using thermal electron cyclotron emission in the Alcator C tokamak

    International Nuclear Information System (INIS)

    Gomez, C.C.

    1986-05-01

    A study of the electron temperature evolution has been performed using thermal electron cyclotron emission. A six channel far infrared polychromator was used to monitor the radiation eminating from six radial locations. The time resolution was <3 μs. Three events were studied, the sawtooth disruption, propagation of the sawtooth generated heatpulse and the electron temperature response to pellet injection. The sawtooth disruption in Alcator takes place in 20 to 50 μs, the energy mixing radius is approx. 8 cm or a/2. It is shown that this is inconsistent with single resonant surface Kadomtsev reconnection. Various forms of scalings for the sawtooth period and amplitude were compared. The electron heatpulse propagation has been used to estimate chi e(the electron thermal diffusivity). The fast temperature relaxation observed during pellet injection has also been studied. Electron temperature profile reconstructions have shown that the profile shape can recover to its pre-injection form in a time scale of 200 μs to 3 ms depending on pellet size

  10. Syringe-Injectable Electronics with a Plug-and-Play Input/Output Interface.

    Science.gov (United States)

    Schuhmann, Thomas G; Yao, Jun; Hong, Guosong; Fu, Tian-Ming; Lieber, Charles M

    2017-09-13

    Syringe-injectable mesh electronics represent a new paradigm for brain science and neural prosthetics by virtue of the stable seamless integration of the electronics with neural tissues, a consequence of the macroporous mesh electronics structure with all size features similar to or less than individual neurons and tissue-like flexibility. These same properties, however, make input/output (I/O) connection to measurement electronics challenging, and work to-date has required methods that could be difficult to implement by the life sciences community. Here we present a new syringe-injectable mesh electronics design with plug-and-play I/O interfacing that is rapid, scalable, and user-friendly to nonexperts. The basic design tapers the ultraflexible mesh electronics to a narrow stem that routes all of the device/electrode interconnects to I/O pads that are inserted into a standard zero insertion force (ZIF) connector. Studies show that the entire plug-and-play mesh electronics can be delivered through capillary needles with precise targeting using microliter-scale injection volumes similar to the standard mesh electronics design. Electrical characterization of mesh electronics containing platinum (Pt) electrodes and silicon (Si) nanowire field-effect transistors (NW-FETs) demonstrates the ability to interface arbitrary devices with a contact resistance of only 3 Ω. Finally, in vivo injection into mice required only minutes for I/O connection and yielded expected local field potential (LFP) recordings from a compact head-stage compatible with chronic studies. Our results substantially lower barriers for use by new investigators and open the door for increasingly sophisticated and multifunctional mesh electronics designs for both basic and translational studies.

  11. Control of electron injection and acceleration in laser-wakefield accelerators

    International Nuclear Information System (INIS)

    Guillaume, E.

    2015-01-01

    Laser-plasma accelerators provide a promising compact alternative to conventional accelerators. Plasma waves with extremely strong electric fields are generated when a high intensity laser is focused into an underdense gas target. Electrons that are trapped in these laser-driven plasma waves can be accelerated up to energies of a few GeVs. Despite their great potential, laser-wakefield accelerators face some issues, regarding notably the stability and reproducibility of the beam when electrons are injected in the accelerating structure. In this manuscript, different techniques of electron injection are presented and compared, notably injection in a sharp density gradient and ionization injection. It is shown that combining these two methods allows for the generation of stable and tunable electron beams. We have also studied a way to manipulate the electron bunch in the phase-space in order to accelerate the bunch beyond the dephasing limit. Such a technique was used with quasi-monoenergetic electron beams to enhance their energy. Moreover, the origin of the evolution of the angular momentum of electrons observed experimentally was investigated. Finally, we demonstrated experimentally a new method - the laser-plasma lens - to strongly reduce the divergence of the electron beam. This laser-plasma lens consists of a second gas jet placed at the exit of the accelerator. The laser pulse drives a wakefield in this second jet whose focusing forces take advantage to reduce the divergence of the trailing electron bunch. A simple analytical model describing the principle is presented, underlining the major importance of the second jet length, density and distance from the first jet. Experimental demonstration of the laser-plasma lens shows a divergence reduction by a factor of 2.6 for electrons up to 300 MeV, in accordance with the model predictions

  12. A gas production system from methane hydrate layers by hot water injection and BHP control with radial horizontal wells

    Energy Technology Data Exchange (ETDEWEB)

    Yamakawa, T.; Ono, S.; Iwamoto, A.; Sugai, Y.; Sasaki, K. [Kyushu Univ., Fukuoka, Fukuoka (Japan)

    2010-07-01

    Reservoir characterization of methane hydrate (MH) bearing turbidite channel in the eastern Nankai Trough, in Japan has been performed to develop a gas production strategy. This paper proposed a gas production system from methane hydrate (MH) sediment layers by combining the hot water injection method and bottom hole pressure control at the production well using radial horizontal wells. Numerical simulations of the cylindrical homogeneous MH layer model were performed in order to evaluate gas production characteristics by the depressurization method with bottom hole pressure control. In addition, the effects of numerical block modeling and averaging physical properties of MH layers were presented. According to numerical simulations, combining the existing production system with hot water injection and bottom hole pressure control results in an outward expansion of the hot water chamber from the center of the MH layer with continuous gas production. 10 refs., 15 figs.

  13. Electron emission from a double-layer metal under femtosecond laser irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Li, Shuchang; Li, Suyu; Jiang, Yuanfei; Chen, Anmin, E-mail: amchen@jlu.edu.cn; Ding, Dajun; Jin, Mingxing, E-mail: mxjin@jlu.edu.cn

    2015-01-01

    In this paper we theoretically investigate electron emission during femtosecond laser ablation of single-layer metal (copper) and double-layer structures. The double-layer structure is composed of a surface layer (copper) and a substrate layer (gold or chromium). The calculated results indicate that the double-layer structure brings a change to the electron emission from the copper surface. Compared with the ablation of a single-layer, a double-layer structure may be helpful to decrease the relaxation time of the electron temperature, and optimize the electron emission by diminishing the tailing phenomenon under the same absorbed laser fluence. With the increase of the absorbed laser fluence, the effect of optimization becomes significant. This study provides a way to optimize the electron emission which can be beneficial to generate laser induced ultrafast electron pulse sources.

  14. Wave propagation through an electron cyclotron resonance layer

    International Nuclear Information System (INIS)

    Westerhof, E.

    1997-01-01

    The propagation of a wave beam through an electron cyclotron resonance layer is analysed in two-dimensional slab geometry in order to assess the deviation from cold plasma propagation due to resonant, warm plasma changes in wave dispersion. For quasi-perpendicular propagation, N ' 'parallel to'' ≅ v t /c, an O-mode beam is shown to exhibit a strong wiggle in the trajectory of the centre of the beam when passing through the fundamental electron cyclotron resonance. The effects are largest for low temperatures and close to perpendicular propagation. Predictions from standard dielectric wave energy fluxes are inconsistent with the trajectory of the beam. Qualitatively identical results are obtained for the X-mode second harmonic. In contrast, the X-mode at the fundamental resonance shows significant deviations form cold plasma propagation only for strongly oblique propagation and/or high temperatures. On the basis of the obtained results a practical suggestion is made for ray tracing near electron cyclotron resonance. (Author)

  15. Single-layer MoS2 electronics.

    Science.gov (United States)

    Lembke, Dominik; Bertolazzi, Simone; Kis, Andras

    2015-01-20

    CONSPECTUS: Atomic crystals of two-dimensional materials consisting of single sheets extracted from layered materials are gaining increasing attention. The most well-known material from this group is graphene, a single layer of graphite that can be extracted from the bulk material or grown on a suitable substrate. Its discovery has given rise to intense research effort culminating in the 2010 Nobel Prize in physics awarded to Andre Geim and Konstantin Novoselov. Graphene however represents only the proverbial tip of the iceberg, and increasing attention of researchers is now turning towards the veritable zoo of so-called "other 2D materials". They have properties complementary to graphene, which in its pristine form lacks a bandgap: MoS2, for example, is a semiconductor, while NbSe2 is a superconductor. They could hold the key to important practical applications and new scientific discoveries in the two-dimensional limit. This family of materials has been studied since the 1960s, but most of the research focused on their tribological applications: MoS2 is best known today as a high-performance dry lubricant for ultrahigh-vacuum applications and in car engines. The realization that single layers of MoS2 and related materials could also be used in functional electronic devices where they could offer advantages compared with silicon or graphene created a renewed interest in these materials. MoS2 is currently gaining the most attention because the material is easily available in the form of a mineral, molybdenite, but other 2D transition metal dichalcogenide (TMD) semiconductors are expected to have qualitatively similar properties. In this Account, we describe recent progress in the area of single-layer MoS2-based devices for electronic circuits. We will start with MoS2 transistors, which showed for the first time that devices based on MoS2 and related TMDs could have electrical properties on the same level as other, more established semiconducting materials. This

  16. The electron-electron instability in a spherical plasma structure with an intermediate double layer

    International Nuclear Information System (INIS)

    Lapuerta, V.; Ahedo, E.

    2003-01-01

    A linear dynamic model of a spherical plasma structure with an intermediate double layer is analyzed in the high-frequency range. The two ion populations tend to stay frozen in their stationary response and this prevents the displacement of the double layer. Different electron modes dominate the plasma dynamics in each quasineutral region. The electrostatic potential and the electron current are the magnitudes most perturbed. The structure develops a reactive electron-electron instability, which is made up of a countable family of eigenmodes. Space-charge effects must be included in the quasineutral regions to determine the eigenmode carrying the maximum growth rate. Except for very small Debye lengths, the fundamental eigenmode governs the instability. The growth rate for the higher harmonics approaches that of an infinite plasma. The instability modes develop mainly on the plasma at the high-potential side of the double layer. The influence of the parameters defining the stationary solution on the instability growth rate is investigated, and the parametric regions of stability are found. The comparison with a couple of experiments on plasma contactors is satisfactory

  17. Evaluation of intracameral injection of ranibizumab and bevacizumab on the corneal endothelium by scanning electron microscopy.

    Science.gov (United States)

    Ari, Seyhmus; Nergiz, Yusuf; Aksit, Ihsan; Sahin, Alparslan; Cingu, Kursat; Caca, Ihsan

    2015-03-01

    To evaluate the effects of intracameral injection of ranibizumab and bevacizumab on the corneal endothelium by scanning electron microscopy (SEM). Twenty-eight female rabbits were randomly divided into four equal groups. Rabbits in groups 1 and 2 underwent intracameral injection of 1 mg/0.1 mL and 0.5 mg/0.05 mL ranibizumab, respectively; group 3 was injected with 1.25 mg/0.05 mL bevacizumab. All three groups were injected with a balanced salt solution (BSS) into the anterior chamber of the left (fellow) eye. None of the rabbits in group 4 underwent an injection. Corneal thickness and intraocular pressure were measured before the injections, on the first day, and in the first month after injection. The rabbits were sacrificed and corneal tissues were excised in the first month after injection. Specular microscopy was used for the corneal endothelial cell count. Endothelial cell density was assessed and comparisons drawn between the groups and the control. Micrographs were recorded for SEM examination. The structure of the corneal endothelial cells, the junctional area of the cell membrane, the distribution of microvillus, and the cell morphology of the eyes that underwent intracameral injection of vascular endothelial growth factor (VEGF), BSS, and the control group were compared. Corneal thickness and intraocular pressure were not significantly different between the groups that underwent anti-VEGF or BSS injection and the control group on the first day and in the first month of injection. The corneal endothelial cell count was significantly diminished in all three groups; predominantly in group 1 and 2 (P<0.05). The SEM examination revealed normal corneal endothelial histology in group 3 and the control group. Eyes in group 1 exhibited indistinctness of corneal endothelial cell borders, microvillus loss in the luminal surface, excessive blebbing, and disintegration of intercellular junctions. In group 2, the cell structure of the corneal endothelium

  18. Electron self-injection and trapping into an evolving plasma bubble.

    Science.gov (United States)

    Kalmykov, S; Yi, S A; Khudik, V; Shvets, G

    2009-09-25

    The blowout (or bubble) regime of laser wakefield acceleration is promising for generating monochromatic high-energy electron beams out of low-density plasmas. It is shown analytically and by particle-in-cell simulations that self-injection of the background plasma electrons into the quasistatic plasma bubble can be caused by slow temporal expansion of the bubble. Sufficient criteria for the electron trapping and bubble's expansion rate are derived using a semianalytic nonstationary Hamiltonian theory. It is further shown that the combination of bubble's expansion and contraction results in monoenergetic electron beams.

  19. Results and analysis of the TMX electron-beam injection experiments

    International Nuclear Information System (INIS)

    Poulsen, P.; Grubb, D.P.

    1980-01-01

    Electron beams (e-beams) were injected into the Tandem Mirror Experiment (TMX) plasma in order to investigate the effect on the ion cyclotron fluctuations of the plasma. The power level of the e-beams was comparable to that of the injected neutral beams. It was found that injection of the e-beams produced no significant effect on the ion cyclotron fluctuations, the measured plasma parameters, or the particle and power flow of the plasma. The increase in bulk electron temperature and the production of mirror-confined electrons found in previous experiments in which e-beams were injected into a mirror-confined plasma were not observed in this experiment. Analysis of the regions and frequencies of wave creation and absorption within the plasma shows that the plasma density and magnetic field profiles through the plasma strongly affect the resonances encountered by the waves. The steep axial density profiles produced by neutral-beam injection in the TMX experiment are not conducive to efficient coupling of the e-beam energy to the plasma

  20. Electron self-injection and acceleration in the bubble regime of laser-plasma interaction

    International Nuclear Information System (INIS)

    Kostyukov, I.; Nerush, E.

    2010-01-01

    Complete text of publication follows. The intense laser-plasma and beam-plasma interactions are highly nonlinear-phenomena, which besides being of fundamental interest, attract a great attention due to a number of important applications. One of the key applications is particle acceleration based on excitation of the strong plasma wakefield by laser pulse. In the linear regime of interaction when the laser intensity is low the plasma wake is the linear plasma wave. Moreover, the ponderomotive force of the laser pulse pushes out the plasma electrons from high intensity region leaving behind the laser pulse the plasma cavity - bubble, which is almost free from the plasma electrons. This is the bubble the laser-plasma interaction. Although the bubble propagates with velocity, which is close to speed of light, the huge charge of unshielded ions inside the plasma cavity can trap the cold plasma electrons. Moreover, the electrons are trapped in the accelerated phase of the bubble plasma field thereby leading to efficient electron acceleration. The electron self-injection is an important advantage of the plasma-based acceleration, which allows to exclude the beam loading system requiring accurate synchronization and additional space. The recent experiments have demonstrated high efficiency of the electron self-injection. The beam quality is often of crucial importance in many applications ranging from inertial confinement fusion to the x-ray free electron lasers. Despite a great interest there is still a little theory for relativistic electron dynamics in the plasma wake in multidimensional geometry including electron self-injection. The dynamics of the self-injected electrons can be roughly divided into three stage: (i) electron scattering by the laser pulse, (ii) electron trapping by the bubble, (iii) electron acceleration in the bubble. We developed two analytical models for electron dynamics in the bubble field and verify them by direct measurements of model parameters

  1. Ultrafast Phase Transition in Vanadium Dioxide Driven by Hot-Electron Injection

    Directory of Open Access Journals (Sweden)

    Prasankumar R. P.

    2013-03-01

    Full Text Available We present a novel all-optical method of triggering the phase transition in vanadium dioxide by means of ballistic electrons injected across the interface between a mesh of Au nanoparticles coveringd VO2 nanoislands. By performing non-degenerate pump-probe transmission spectroscopy on this hybrid plasmonic/phase-changing nanostructure, structural and electronic dynamics can be retrieved and compared.

  2. Interpretation of electron beam induced charging of oxide layers in a transistor studied using electron holography

    DEFF Research Database (Denmark)

    Ubaldi, F; Pozzi, G; Kasama, Takeshi

    2010-01-01

    Off-axis electron holography has been used to characterize a linear array of transistors, which was prepared for examination in cross-sectional geometry in the transmission electron microscope using focused ion beam milling. In reconstructed phase images, regions of silicon oxide that are located...... into account the mean inner potential of the specimen and the perturbed vacuum reference wave. The simulations suggest that the oxide layers contain a uniform volume density of positive charge and that the elliptical contours result from the combined effect of the electrostatic potential in the specimen...

  3. Bubble-induced mixing of two horizontal liquid layers with non-uniform gas injection at the bottom

    International Nuclear Information System (INIS)

    Cheung, F.B.; Pedersen, D.R.; Leinweber, G.

    1986-01-01

    During a postulated severe core meltdown accident in an LMFBR, a large amount of sodium coolant may spill into the reactor concrete cavity. A layer of liquid products may form as a result of the sodium-concrete reactions. The liquid product layer, which is highly viscous and much heavier than sodium, separates the concrete from the sodium pool. In general, the downward transport of sodium through the liquid product layer to the unreacted concrete surface, which controls the rate of chemical erosion of the concrete, depends strongly on the agitation induced by gas evolution from the heated concrete. In this study, experiments were conducted to explore the effect of non-uniform gas injection on mixing of two horizontal mutually soluble liquid layers. The liquid in the lower layer was chosen to be more viscous and heavier than the liquid in the upper layer. To simulate the reactor accident situation, gas was injected at the bottom of the liquid-liquid system through a circular hole that covered only the center portion of the bottom surface of the lower liquid layer. The bubble-induced mixing motions were observed and the rate of mixing was measured for different hole sizes and various gas flow rates. The results of this study clearly show that the rate of gas injection is not the only parameter controlling the mixing of the liquid-liquid system. The effect of non-uniform gas injection is important at high gas flow rates. Within the present experimental conditions, the reduction in the overall mixing rate can be as large as a factor of three

  4. Injection control development of the JT-60U electron cyclotron heating system

    Energy Technology Data Exchange (ETDEWEB)

    Hiranai, Shinichi; Shinozaki, Shin-ichi; Yokokura, Kenji; Moriyama, Shinichi [Japan Atomic Energy Research Inst., Naka, Ibaraki (Japan). Naka Fusion Research Establishment; Sato, Fumiaki [Nippon Advanced Technology Co., Ltd., Tokai, Ibaraki (Japan); Suzuki, Yasuo [Atomic Energy General Service Co., Ltd., Tokai, Ibaraki (Japan); Ikeda, Yoshitaka [Japan Atomic Energy Research Inst., Kashiwa, Chiba (Japan)

    2003-03-01

    The JT-60U electron cyclotron heating (ECH) System injects a millimeteric wave at 110 GHz into the JT-60 Plasma, and heats the plasma or drives a current locally to enhance the confinement performance of the JT-60 plasma. The system consists of four sets of high power gyrotrons, high voltage power supplies and transmission lines, and two antennas that launch electron cyclotron (EC) beams toward the plasma. The key features of the injection control system are streering of the direction of the EC beam by driving the movable mirror in the antenna, and capability to set any combination of polarization angle and ellipticity by rotating the two grooved mirrors in the polarizers. This report represents the design, fabrication and improvements of the injection control system. (author)

  5. Controlling charge injection in organic electronic devices using self-assembled monolayers

    Energy Technology Data Exchange (ETDEWEB)

    Campbell, I.H.; Kress, J.D.; Martin, R.L.; Smith, D.L. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Barashkov, N.N.; Ferraris, J.P. [The University of Texas at Dallas, Richardson, Texas 75083 (United States)

    1997-12-01

    We demonstrate control and improvement of charge injection in organic electronic devices by utilizing self-assembled monolayers (SAMs) to manipulate the Schottky energy barrier between a metal electrode and the organic electronic material. Hole injection from Cu electrodes into the electroluminescent conjugated polymer poly[2-methoxy,5-(2{sup {prime}}-ethyl-hexyloxy)-1,4-phenylene vinylene] was varied by using two conjugated-thiol based SAMs. The chemically modified electrodes were incorporated in organic diode structures and changes in the metal/polymer Schottky energy barriers and current{endash}voltage characteristics were measured. Decreasing (increasing) the Schottky energy barrier improves (degrades) charge injection into the polymer. {copyright} {ital 1997 American Institute of Physics.}

  6. Layered Black Phosphorus: Strongly Anisotropic Magnetic, Electronic, and Electron-Transfer Properties.

    Science.gov (United States)

    Sofer, Zdeněk; Sedmidubský, David; Huber, Štěpán; Luxa, Jan; Bouša, Daniel; Boothroyd, Chris; Pumera, Martin

    2016-03-01

    Layered elemental materials, such as black phosphorus, exhibit unique properties originating from their highly anisotropic layered structure. The results presented herein demonstrate an anomalous anisotropy for the electrical, magnetic, and electrochemical properties of black phosphorus. It is shown that heterogeneous electron transfer from black phosphorus to outer- and inner-sphere molecular probes is highly anisotropic. The electron-transfer rates differ at the basal and edge planes. These unusual properties were interpreted by means of calculations, manifesting the metallic character of the edge planes as compared to the semiconducting properties of the basal plane. This indicates that black phosphorus belongs to a group of materials known as topological insulators. Consequently, these effects render the magnetic properties highly anisotropic, as both diamagnetic and paramagnetic behavior can be observed depending on the orientation in the magnetic field. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. The effect of external electron injection and the environment composition on development of atmospheric discharge investigation

    International Nuclear Information System (INIS)

    Bogachenkov, V.A.; Oginov, A.V.; Chajkovskij, S.A.; Shpakov, K.V.

    2012-01-01

    The effect of external electron injection (with energy about 150 keV) on initial phase development of the high-voltage (1.0-1.2 MV) long (500-700 mm) gas discharge is investigated. The experiments were conducted in atmospheric pressure air and in a mixture of air and water droplet phase [ru

  8. Efficient electron injection from solution-processed cesium stearate interlayers in organic light-emitting diodes

    NARCIS (Netherlands)

    Wetzelaer, G. A. H.; Najafi, A.; Kist, R. J. P.; Kuik, M.; Blom, P. W. M.

    2013-01-01

    The electron-injection capability of solution-processed cesium stearate films in organic light-emitting diodes is investigated. Cesium stearate, which is expected to exhibit good solubility and film formation due to its long hydrocarbon chain, is synthesized using a straightforward procedure.

  9. Computations on injection into organics - or how to let electrons shine

    NARCIS (Netherlands)

    Uijttewaal, M.A.

    2007-01-01

    This thesis studies various aspects of electron injection into organic light-emitting diodes (OLEDs) using density functional theory and the master equation approach (only the last chapter). The first part of the thesis studies the relation between the work function and the surface stability of a

  10. CURRENT SHEET REGULATION OF SOLAR NEAR-RELATIVISTIC ELECTRON INJECTION HISTORIES

    Energy Technology Data Exchange (ETDEWEB)

    Agueda, N.; Sanahuja, B. [Departament d' Astronomia i Meteorologia, Institut de Ciencies del Cosmos, Universitat de Barcelona (Spain); Vainio, R. [Department of Physics, University of Helsinki (Finland); Dalla, S. [Jeremiah Horrocks Institute, University of Central Lancashire (United Kingdom); Lario, D. [Applied Physics Laboratory, Johns Hopkins University (United States)

    2013-03-10

    We present a sample of three large near-relativistic (>50 keV) electron events observed in 2001 by both the ACE and the Ulysses spacecraft, when Ulysses was at high-northern latitudes (>60 Degree-Sign ) and close to 2 AU. Despite the large latitudinal distance between the two spacecraft, electrons injected near the Sun reached both heliospheric locations. All three events were associated with large solar flares, strong decametric type II radio bursts and accompanied by wide (>212 Degree-Sign ) and fast (>1400 km s{sup -1}) coronal mass ejections (CMEs). We use advanced interplanetary transport simulations and make use of the directional intensities observed in situ by the spacecraft to infer the electron injection profile close to the Sun and the interplanetary transport conditions at both low and high latitudes. For the three selected events, we find similar interplanetary transport conditions at different heliolatitudes for a given event, with values of the mean free path ranging from 0.04 AU to 0.27 AU. We find differences in the injection profiles inferred for each spacecraft. We investigate the role that sector boundaries of the heliospheric current sheet (HCS) have on determining the characteristics of the electron injection profiles. Extended injection profiles, associated with coronal shocks, are found if the magnetic footpoints of the spacecraft lay in the same magnetic sector as the associated flare, while intermittent sparse injection episodes appear when the spacecraft footpoints are in the opposite sector or a wrap in the HCS bounded the CME structure.

  11. Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells.

    Science.gov (United States)

    Zhou, Nanjia; Kim, Myung-Gil; Loser, Stephen; Smith, Jeremy; Yoshida, Hiroyuki; Guo, Xugang; Song, Charles; Jin, Hosub; Chen, Zhihua; Yoon, Seok Min; Freeman, Arthur J; Chang, Robert P H; Facchetti, Antonio; Marks, Tobin J

    2015-06-30

    In diverse classes of organic optoelectronic devices, controlling charge injection, extraction, and blocking across organic semiconductor-inorganic electrode interfaces is crucial for enhancing quantum efficiency and output voltage. To this end, the strategy of inserting engineered interfacial layers (IFLs) between electrical contacts and organic semiconductors has significantly advanced organic light-emitting diode and organic thin film transistor performance. For organic photovoltaic (OPV) devices, an electronically flexible IFL design strategy to incrementally tune energy level matching between the inorganic electrode system and the organic photoactive components without varying the surface chemistry would permit OPV cells to adapt to ever-changing generations of photoactive materials. Here we report the implementation of chemically/environmentally robust, low-temperature solution-processed amorphous transparent semiconducting oxide alloys, In-Ga-O and Ga-Zn-Sn-O, as IFLs for inverted OPVs. Continuous variation of the IFL compositions tunes the conduction band minima over a broad range, affording optimized OPV power conversion efficiencies for multiple classes of organic active layer materials and establishing clear correlations between IFL/photoactive layer energetics and device performance.

  12. One-Dimensional Electron Transport Layers for Perovskite Solar Cells

    Directory of Open Access Journals (Sweden)

    Ujwal K. Thakur

    2017-04-01

    Full Text Available The electron diffusion length (Ln is smaller than the hole diffusion length (Lp in many halide perovskite semiconductors meaning that the use of ordered one-dimensional (1D structures such as nanowires (NWs and nanotubes (NTs as electron transport layers (ETLs is a promising method of achieving high performance halide perovskite solar cells (HPSCs. ETLs consisting of oriented and aligned NWs and NTs offer the potential not merely for improved directional charge transport but also for the enhanced absorption of incoming light and thermodynamically efficient management of photogenerated carrier populations. The ordered architecture of NW/NT arrays affords superior infiltration of a deposited material making them ideal for use in HPSCs. Photoconversion efficiencies (PCEs as high as 18% have been demonstrated for HPSCs using 1D ETLs. Despite the advantages of 1D ETLs, there are still challenges that need to be overcome to achieve even higher PCEs, such as better methods to eliminate or passivate surface traps, improved understanding of the hetero-interface and optimization of the morphology (i.e., length, diameter, and spacing of NWs/NTs. This review introduces the general considerations of ETLs for HPSCs, deposition techniques used, and the current research and challenges in the field of 1D ETLs for perovskite solar cells.

  13. One-Dimensional Electron Transport Layers for Perovskite Solar Cells

    Science.gov (United States)

    Thakur, Ujwal K.; Kisslinger, Ryan; Shankar, Karthik

    2017-01-01

    The electron diffusion length (Ln) is smaller than the hole diffusion length (Lp) in many halide perovskite semiconductors meaning that the use of ordered one-dimensional (1D) structures such as nanowires (NWs) and nanotubes (NTs) as electron transport layers (ETLs) is a promising method of achieving high performance halide perovskite solar cells (HPSCs). ETLs consisting of oriented and aligned NWs and NTs offer the potential not merely for improved directional charge transport but also for the enhanced absorption of incoming light and thermodynamically efficient management of photogenerated carrier populations. The ordered architecture of NW/NT arrays affords superior infiltration of a deposited material making them ideal for use in HPSCs. Photoconversion efficiencies (PCEs) as high as 18% have been demonstrated for HPSCs using 1D ETLs. Despite the advantages of 1D ETLs, there are still challenges that need to be overcome to achieve even higher PCEs, such as better methods to eliminate or passivate surface traps, improved understanding of the hetero-interface and optimization of the morphology (i.e., length, diameter, and spacing of NWs/NTs). This review introduces the general considerations of ETLs for HPSCs, deposition techniques used, and the current research and challenges in the field of 1D ETLs for perovskite solar cells. PMID:28468280

  14. Effects of local high-frequency perturbation on a turbulent boundary layer by synthetic jet injection

    International Nuclear Information System (INIS)

    Guo, Hao; Huang, Qian-Min; Liu, Pei-qing; Qu, Qiu-Lin

    2015-01-01

    An experimental study is performed to investigate the local high-frequency perturbation effects of a synthetic jet injection on a flat-plate turbulent boundary layer. Parameters of the synthetic jet are designed to force a high-frequency perturbation from a thin spanwise slot in the wall. In the test locations downstream of the slot, it is found that skin-friction is reduced by the perturbation, which is languishingly evolved downstream of the slot with corresponding influence on the near-wall regeneration mechanism of turbulent structures. The downstream slot region is divided into two regions due to the influence strength of the movement of spanwise vortices generated by the high-frequency perturbation. Interestingly, the variable interval time average technique is found to be disturbed by the existence of the spanwise vortices’ motion, especially in the region close to the slot. Similar results are obtained from the analysis of the probability density functions of the velocity fluctuation time derivatives, which is another indirect technique for detecting the enhancement or attenuation of streamwise vortices. However, both methods have shown consistent results with the skin-friction reduction mechanism in the far-away slot region. The main purpose of this paper is to remind researchers to be aware of the probable influence of spanwise vortices’ motion in wall-bounded turbulence control. (paper)

  15. Bubble-induced mixing of two horizontal liquid layers with non-uniform gas injection at the bottom

    International Nuclear Information System (INIS)

    Cheung, F.B.; Leinweber, G.; Pedersen, D.R.

    1984-01-01

    During a postulated severe core meltdown accident in an LMFBR, a large amount of sodium coolant may spill into the reactor concrete cavity. A layer of liquid products may form as a result of the sodium-concrete reactions. The liquid product layer, which is highly viscous and much heavier than sodium, separates the concrete from the sodium pool. In general, the downward transport of sodium through the liquid product layer to the unreacted concrete surface, which controls the rate of chemical erosion of the concrete, depends strongly on the agitation induced by gas evolution from the heated concrete. In this study, experiments were conducted to explore the effect of non-uniform gas injection on mixing of two horizontal mutually soluble liquid layers. The liquid in the lower layer was chosen to be more viscous and heavier than the liquid in the upper layer. To simulate the reactor accident situation, gas was injected at the bottom of the liquid-liquid system through a circular hole that covered only the center portion of the bottom surface of the lower liquid layer. The bubble-induced mixing motions were observed and the rate of mixing was measured for different hole sizes and for various gas flow rates

  16. The DFT investigations of the electron injection in hydrazone-based sensitizers

    KAUST Repository

    Al-Sehemi, Abdullah G.

    2012-03-01

    Quantum chemical calculations were carried out by using density functional theory and time-dependant density functional theory at B3LYP/6-31G(d) and TD-B3LYP/6-31G(d) level of theories. The absorption spectra have been computed with and without solvent. The calculated absorption spectra in ethanol, acetonitrile, and methanol are in good agreement with experimental evidences. The absorption spectra are red shifted compared to System1. On the basis of electron injection and electronic coupling constant, we have shed light on the nature of different sensitizers. The coplanarity between the benzene near anchoring group having LUMO and the bridge (N-N) is broken in System6 and System7 that would hamper the recombination process. The electron injection of System2-System10 is superior to System1. The highest electronic coupling constant has been observed for System6 that followed the System7 and System8. The light-harvesting efficiency of all the sensitizers enlarged in acetonitrile and ethanol. The long-range-corrected functional (LC-BLYP), Coulomb-attenuating method (CAM-B3LYP), and BH and HLYP functional underestimate the excitation energies while B3LYP is good to reproduce the experimental data. Moreover, we have investigated the effect of cyanoacetic acid as anchoring group on the electron injection. © 2012 Springer-Verlag.

  17. Cyclotron resonance study of the two-dimensional electron layers and double layers in tilted magnetic fields

    Czech Academy of Sciences Publication Activity Database

    Goncharuk, Natalya; Smrčka, Ludvík; Kučera, Jan

    2004-01-01

    Roč. 22, - (2004), s. 590-593 ISSN 1386-9477. [International Conference on Electronic Properties of Two-Dimensional Systems /15./. Nara, 14.07.2003-18.07.2003] R&D Projects: GA ČR GA202/01/0754 Institutional research plan: CEZ:AV0Z1010914 Keywords : single layer * double layer * two-dimensional electron system * cyclotron resonance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.898, year: 2004

  18. Breakdown assisted by a novel electron drift injection in the J-TEXT tokamak

    International Nuclear Information System (INIS)

    Wang, Nengchao; Jin, Hai; Zhuang, Ge; Ding, Yonghua; Pan, Yuan; Cen, Yishun; Chen, Zhipeng; Huang, Hai; Liu, Dequan; Rao, Bo; Zhang, Ming; Zou, Bichen

    2014-01-01

    A novel electron drift injection (EDI) system aiming to improve breakdown behavior has been designed and constructed on the Joint Texas EXperiment Tokamak Tokamak. Electrons emitted by the system undergo the E×B drift, ∇B drift and curvature drift in sequence in order to traverse the confining magnetic field. A local electrostatic well, generated by a concave-shaped plate biased more negative than the cathode, is introduced to interrupt the emitted electrons moving along the magnetic field line (in the parallel direction) in an attempt to bring an enhancement of the injection efficiency and depth. A series of experiments have demonstrated the feasibility of this method, and a penetration distance deeper than 9.5 cm is achieved. Notable breakdown improvements, including the reduction of breakdown delay and average loop voltage, are observed for discharges assisted by EDI. The lower limit of successfully ionized pressure is expanded

  19. Optical Absorption and Electron Injection of 4-(Cyanomethylbenzoic Acid Based Dyes: A DFT Study

    Directory of Open Access Journals (Sweden)

    Yuehua Zhang

    2015-01-01

    Full Text Available Density functional theory (DFT and time-dependent density functional theory (TDDFT calculations were carried out to study the ground state geometries, electronic structures, and absorption spectra of 4-(cyanomethylbenzoic acid based dyes (AG1 and AG2 used for dye-sensitized solar cells (DSSCs. The excited states properties and the thermodynamical parameters of electron injection were studied. The results showed that (a two dyes have uncoplanar structures along the donor unit and conjugated bridge space, (b two sensitizers exhibited intense absorption in the UV-Vis region, and (c the excited state oxidation potential was higher than the conduction band edge of TiO2 photoanode. As a result, a solar cell based on the 4-(cyanomethylbenzoic acid based dyes exhibited well photovoltaic performance. Furthermore, nine dyes were designed on the basis of AG1 and AG2 to improve optical response and electron injection.

  20. Conjugate echoes of artifically injected electron beams detected optically by means of new image processing

    International Nuclear Information System (INIS)

    Hallinan, T.J.; Stenbaek-Nielsen, H.C.; Baldridge, J.; Winckler, J.; Malcolm, P.

    1990-01-01

    Following two upward injections of energetic electrons (38 keV and 26 keV) from the Echo 4 rocket-borne electron accelerator, artificial auroral streaks were detected by ground-based low-light-level television. They were delayed relative to the injections by 2.06 s and 2.42 s, respectively. The delays are only 4-5% longer than calculated using a dynamic model of the geomagnetic field. Other field models yielded shorter bounce times. Since the delays were in the inverse ratio of the relativistic velocities calculated for the nominal beam energies, it is concluded that the potential of the payload remained below 1 kV during 45 mA injections at an altitude of 210 km. The echo streaks showed little dispersion in either time or space, indicating that the portion of the beam returning to the northen hemisphere loss cone remained collimated and nearly monoenergetic. But there was a 70% loss in the return flux. A diligent search failed to locate similar echoes from the more powerful injections employed in the Echo 5 and Echo 7 rocket experiments, suggesting flux losses of at least 98% and 92%, respectively. The losses are thought to be due to pitch angle scattering out of the loss cone as the electrons traverse the equatorial region but could also be due to collective beam plasma interactions

  1. Injection of a single electron from static to moving quantum dots.

    Science.gov (United States)

    Bertrand, Benoit; Hermelin, Sylvain; Mortemousque, Pierre-André; Takada, Shintaro; Yamamoto, Michihisa; Tarucha, Seigo; Ludwig, Arne; Wieck, Andreas D; Bäuerle, Christopher; Meunier, Tristan

    2016-05-27

    We study the injection mechanism of a single electron from a static quantum dot into a moving quantum dot. The moving quantum dots are created with surface acoustic waves (SAWs) in a long depleted channel. We demonstrate that the injection process is characterized by an activation law with a threshold that depends on the SAW amplitude and on the dot-channel potential gradient. By sufficiently increasing the SAW modulation amplitude, we can reach a regime where the transfer has unity probability and is potentially adiabatic. This study points to the relevant regime to use moving dots in quantum information protocols.

  2. Energetic Electron Acceleration and Injection During Dipolarization Events in Mercury's Magnetotail

    Science.gov (United States)

    Dewey, Ryan M.; Slavin, James A.; Raines, Jim M.; Baker, Daniel N.; Lawrence, David J.

    2017-12-01

    Energetic particle bursts associated with dipolarization events within Mercury's magnetosphere were first observed by Mariner 10. The events appear analogous to particle injections accompanying dipolarization events at Earth. The Energetic Particle Spectrometer (3 s resolution) aboard MESSENGER determined the particle bursts are composed entirely of electrons with energies ≳ 300 keV. Here we use the Gamma-Ray Spectrometer high-time-resolution (10 ms) energetic electron measurements to examine the relationship between energetic electron injections and magnetic field dipolarization in Mercury's magnetotail. Between March 2013 and April 2015, we identify 2,976 electron burst events within Mercury's magnetotail, 538 of which are closely associated with dipolarization events. These dipolarizations are detected on the basis of their rapid ( 2 s) increase in the northward component of the tail magnetic field (ΔBz 30 nT), which typically persists for 10 s. Similar to those at Earth, we find that these dipolarizations appear to be low-entropy, depleted flux tubes convecting planetward following the collapse of the inner magnetotail. We find that electrons experience brief, yet intense, betatron and Fermi acceleration during these dipolarizations, reaching energies 130 keV and contributing to nightside precipitation. Thermal protons experience only modest betatron acceleration. While only 25% of energetic electron events in Mercury's magnetotail are directly associated with dipolarization, the remaining events are consistent with the Near-Mercury Neutral Line model of magnetotail injection and eastward drift about Mercury, finding that electrons may participate in Shabansky-like closed drifts about the planet. Magnetotail dipolarization may be the dominant source of energetic electron acceleration in Mercury's magnetosphere.

  3. Energetic electron injections and dipolarization events in Mercury's magnetotail: Substorm dynamics

    Science.gov (United States)

    Dewey, R. M.; Slavin, J. A.; Raines, J. M.; Imber, S.; Baker, D. N.; Lawrence, D. J.

    2017-12-01

    Despite its small size, Mercury's terrestrial-like magnetosphere experiences brief, yet intense, substorm intervals characterized by features similar to at Earth: loading/unloading of the tail lobes with open magnetic flux, dipolarization of the magnetic field at the inner edge of the plasma sheet, and, the focus of this presentation, energetic electron injection. We use the Gamma-Ray Spectrometer's high-time resolution (10 ms) energetic electron measurements to determine the relationship between substorm activity and energetic electron injections coincident with dipolarization fronts in the magnetotail. These dipolarizations were detected on the basis of their rapid ( 2 s) increase in the northward component of the tail magnetic field (ΔBz 30 nT), which typically persists for 10 s. We estimate the typical flow channel to be 0.15 RM, planetary convection speed of 750 km/s, cross-tail potential drop of 7 kV, and flux transport of 0.08 MWb for each dipolarization event, suggesting multiple simultaneous and sequential dipolarizations are required to unload the >1 MWb of magnetic flux typically returned to the dayside magnetosphere during a substorm interval. Indeed, while we observe most dipolarization-injections to be isolated or in small chains of events (i.e., 1-3 events), intervals of sawtooth-like injections with >20 sequential events are also present. The typical separation between dipolarization-injection events is 10 s. Magnetotail dipolarization, in addition to being a powerful source of electron acceleration, also plays a significant role in the substorm process at Mercury.

  4. Precipitated Fluxes of Radiation Belt Electrons via Injection of Whistler-Mode Waves

    Science.gov (United States)

    Kulkarni, P.; Inan, U. S.; Bell, T. F.

    2005-12-01

    Inan et al. (U.S. Inan et al., Controlled precipitation of radiation belt electrons, Journal of Geophysical Research-Space Physics, 108 (A5), 1186, doi: 10.1029/2002JA009580, 2003.) suggested that the lifetime of energetic (a few MeV) electrons in the inner radiation belts may be moderated by in situ injection of whistler mode waves at frequencies of a few kHz. We use the Stanford 2D VLF raytracing program (along with an accurate estimation of the path-integrated Landau damping based on data from the HYDRA instrument on the POLAR spacecraft) to determine the distribution of wave energy throughout the inner radiation belts as a function of injection point, wave frequency and injection wave normal angle. To determine the total wave power injected and its initial distribution in k-space (i.e., wave-normal angle), we apply the formulation of Wang and Bell ( T.N.C. Wang and T.F. Bell, Radiation resistance of a short dipole immersed in a cold magnetoionic medium, Radio Science, 4 (2), 167-177, February 1969) for an electric dipole antenna placed at a variety of locations throughout the inner radiation belts. For many wave frequencies and wave normal angles the results establish that most of the radiated power is concentrated in waves whose wave normals are located near the resonance cone. The combined use of the radiation pattern and ray-tracing including Landau damping allows us to make quantitative estimates of the magnetospheric distribution of wave power density for different source injection points. We use these results to estimate the number of individual space-based transmitters needed to significantly impact the lifetimes of energetic electrons in the inner radiation belts. Using the wave power distribution, we finally determine the energetic electron pitch angle scattering and the precipitated flux signatures that would be detected.

  5. Ion and electron injection in ionosphere and magnetosphere. Application to the parallel electric field measurement in auroral zones

    International Nuclear Information System (INIS)

    Pirre, M.

    1982-11-01

    New methods of measuring parallel electric field in auroral zones are investigated in this thesis. In the studied methods, artificial injection of ions Li + and electrons from a spacecraf is used. Measurements obtained during the ARAKS experiment are also presented. The behaviour of the ionospheric plasma located few hundred meters from a 0,5A electron beam injected in ionosphere from a rocket is studied, together with the behaviour of a Cs plasma artificially injected from the same spacecraft [fr

  6. Cross correlation coefficients of turbulent boundary layer with micro-bubble injection

    International Nuclear Information System (INIS)

    Claudia del Carmen Gutierrez-Torres; Yassin A Hassan; Jose Alfredo Jimenez-Bernal

    2005-01-01

    Full text of publication follows: Injection of micro-bubbles within the turbulent boundary layer has been investigated for a several years as a method to achieve drag reduction. However, the physical mechanism of this phenomenon is not fully understood yet. Experiments in a channel flow for single phase (water) and two phase (water and micro-bubbles) flows under different void fraction conditions are reported for a Reynolds number of 5128. Particle Image Velocimetry technique is used to measure instantaneous velocity fields. Consequently the cross-correlation coefficient Ruv can be calculated along the stream-wise direction for various different y + positions and along the normal direction for the fluctuating components of the velocity obtained from the instantaneous velocity fields. The experiments were carried out in a rectangular acrylic channel, whose dimensions are 4.8 m length, 20.6 cm wide and 5.6 cm height. Water was driven trough the channel by gravity from a tank, which was located 3 m above the channel. Then, water was conducted to a lower tank; from which water was pumped to the upper thank forming a closed loop. Upper tank's water level was kept constant through the tests to ensure constant flow rate trough the channel. The velocity field in the x-y plane was obtained by particle image velocimetry (PIV) at 3.15 m downstream from the channel inlet. A Nd:YAG laser with a wavelength of 532 nm (green light) and power of 350 mJ per pulse is utilized. The particles used for seeding have a diameter that goes from 6-9 μm with a specific gravity almost identical to water s specific gravity. The laser light scattered from the seeding particles was recorded using a CCD Kodak Megaplus camera, Model ES 1.0, 1008 x 1018 pixels. The viewing area was 1.28 cm 2 and was located close to the channel wall. The system recorded 30 velocity fields per second. Each velocity field was obtained from a pair of consecutive images capturing the second image of the pair 1 ms after

  7. Cross correlation coefficients of turbulent boundary layer with micro-bubble injection

    Energy Technology Data Exchange (ETDEWEB)

    Claudia del Carmen Gutierrez-Torres [LABINTHAP-SEPI-ESIME, Instituto Politecnico Nacional, U.P. Adolfo Lopez Mateos Edif. 5 3er. Piso, Col Lindavista, C.P. 07738, Mexico, D. F. (Mexico); Yassin A Hassan; Jose Alfredo Jimenez-Bernal [Texas A and M University, College Station, Tx. 77843-3133 (United States)

    2005-07-01

    Full text of publication follows: Injection of micro-bubbles within the turbulent boundary layer has been investigated for a several years as a method to achieve drag reduction. However, the physical mechanism of this phenomenon is not fully understood yet. Experiments in a channel flow for single phase (water) and two phase (water and micro-bubbles) flows under different void fraction conditions are reported for a Reynolds number of 5128. Particle Image Velocimetry technique is used to measure instantaneous velocity fields. Consequently the cross-correlation coefficient Ruv can be calculated along the stream-wise direction for various different y{sup +} positions and along the normal direction for the fluctuating components of the velocity obtained from the instantaneous velocity fields. The experiments were carried out in a rectangular acrylic channel, whose dimensions are 4.8 m length, 20.6 cm wide and 5.6 cm height. Water was driven trough the channel by gravity from a tank, which was located 3 m above the channel. Then, water was conducted to a lower tank; from which water was pumped to the upper thank forming a closed loop. Upper tank's water level was kept constant through the tests to ensure constant flow rate trough the channel. The velocity field in the x-y plane was obtained by particle image velocimetry (PIV) at 3.15 m downstream from the channel inlet. A Nd:YAG laser with a wavelength of 532 nm (green light) and power of 350 mJ per pulse is utilized. The particles used for seeding have a diameter that goes from 6-9 {mu}m with a specific gravity almost identical to water s specific gravity. The laser light scattered from the seeding particles was recorded using a CCD Kodak Megaplus camera, Model ES 1.0, 1008 x 1018 pixels. The viewing area was 1.28 cm{sup 2} and was located close to the channel wall. The system recorded 30 velocity fields per second. Each velocity field was obtained from a pair of consecutive images capturing the second image of

  8. Injection of electrons by colliding laser pulses in a laser wakefield accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Hansson, M., E-mail: martin.hansson@fysik.lth.se; Aurand, B.; Ekerfelt, H.; Persson, A.; Lundh, O.

    2016-09-01

    To improve the stability and reproducibility of laser wakefield accelerators and to allow for future applications, controlling the injection of electrons is of great importance. This allows us to control the amount of charge in the beams of accelerated electrons and final energy of the electrons. Results are presented from a recent experiment on controlled injection using the scheme of colliding pulses and performed using the Lund multi-terawatt laser. Each laser pulse is split into two parts close to the interaction point. The main pulse is focused on a 2 mm diameter gas jet to drive a nonlinear plasma wave below threshold for self-trapping. The second pulse, containing only a fraction of the total laser energy, is focused to collide with the main pulse in the gas jet under an angle of 150°. Beams of accelerated electrons with low divergence and small energy spread are produced using this set-up. Control over the amount of accelerated charge is achieved by rotating the plane of polarization of the second pulse in relation to the main pulse. Furthermore, the peak energy of the electrons in the beams is controlled by moving the collision point along the optical axis of the main pulse, and thereby changing the acceleration length in the plasma. - Highlights: • Compact colliding pulse injection set-up used to produce low energy spread e-beams. • Beam charge controlled by rotating the polarization of injection pulse. • Peak energy controlled by point of collision to vary the acceleration length.

  9. Generation of microwaves by a slow wave electron cyclotron maser with axial injection

    International Nuclear Information System (INIS)

    Michie, R.B.; Vomvoridis, J.

    1984-01-01

    Experimental measurements of microwave generation by a new electron beam wave interaction is presented. This slow wave electron cyclotron maser (ECM) has a continuous electron beam injected axially into a slow wave structure containing a circularly polarized HE, hybrid electric (HE) mode. A longitudinal magnetic field produces microwaves by maser action. The slow wave structure allows energy to be coupled out of an electron beam with no initial transverse momentum. This is similar to klystrons, traveling wave tubes, and Cherenkov masers, but there is no axial beam bunching. Therefore, ECM designs using relativistic electron beams are allowed. This ECM is similar to a gyrotron in that the electrons are coupled through their cyclotron motion to the wave, but there is no need for initial electron velocity perpendicular to the background magnetic field. Therefore, a narrower spread of electron beam energy about the ECM resonance is possible which gives higher theoretical efficiency. A nonlinear analysis of energy coupling of electrons to the slow wave in the ECM and the design of the slow wave ECM microwave amplifier at 10 GHz using a 200 KeV axial electron beam in 3 KG magnetic field is included

  10. Electronic spectra of anions intercalated in layered double hydroxides

    Indian Academy of Sciences (India)

    groups of the layers and interlayer water through the termi- nal atom symmetry ... results in a reaction with the metal hydroxide layers lead- ing to the ..... List of band positions observed for potassium salts of anion and LDH samples. Salts.

  11. Low-voltage organic electronics based on a gate-tunable injection barrier in vertical graphene-organic semiconductor heterostructures.

    Science.gov (United States)

    Hlaing, Htay; Kim, Chang-Hyun; Carta, Fabio; Nam, Chang-Yong; Barton, Rob A; Petrone, Nicholas; Hone, James; Kymissis, Ioannis

    2015-01-14

    The vertical integration of graphene with inorganic semiconductors, oxide semiconductors, and newly emerging layered materials has recently been demonstrated as a promising route toward novel electronic and optoelectronic devices. Here, we report organic thin film transistors based on vertical heterojunctions of graphene and organic semiconductors. In these thin heterostructure devices, current modulation is accomplished by tuning of the injection barriers at the semiconductor/graphene interface with the application of a gate voltage. N-channel devices fabricated with a thin layer of C60 show a room temperature on/off ratio >10(4) and current density of up to 44 mAcm(-2). Because of the ultrashort channel intrinsic to the vertical structure, the device is fully operational at a driving voltage of 200 mV. A complementary p-channel device is also investigated, and a logic inverter based on two complementary transistors is demonstrated. The vertical integration of graphene with organic semiconductors via simple, scalable, and low-temperature fabrication processes opens up new opportunities to realize flexible, transparent organic electronic, and optoelectronic devices.

  12. Observations of fast magnetospheric echoes of artificially injected electrons above an auroral arc

    International Nuclear Information System (INIS)

    Wilhelm, K.; Becker, C.; Schmidt, R.

    1984-04-01

    Electron beam experiments using rocket-borne instrumentation have confirmed earlier observations of fast magnetospheric echoes of artificially injected energetic electrons. These experiments were jointly carried out by the University of Minnesota, the National Research Council of Canada and the Max-Planck-Institut fuer Aeronomie. A total of 234 echoes have been observed in a pitch angle range from 0 0 to 110 0 at energies of 1.87 and 3.90 keV. Out of this number, 95 echoes could unambiguously be identified with known accelerator operations at 2, 4 or 8 keV energy and highest current levels resulting in the determination of transit times of typically 400 ms. In most cases, when echoes were present in both energy channels, the higher energy electrons led the lower energy ones by approximately 50 ms. No echoes have been found in the 7.9 keV-detector channels. Adiabatic theory applied to these observations yields a reflection height of 3000 to 4000 km. The injection process is briefly discussed as the strong beam-plasma interaction that occurred near the electron accelerator appears to be instrumental in generating the source of heated electrons required for successful echo detection. Two consequences of this interaction, namely, strong energy and pitch angle diffusion and electron acceleration are illustrated with several examples. (orig.) [de

  13. Enhanced Performance of Dye-Sensitized Solar Cells with Nanostructure Graphene Electron Transfer Layer

    Directory of Open Access Journals (Sweden)

    Chih-Hung Hsu

    2014-01-01

    Full Text Available The utilization of nanostructure graphene thin films as electron transfer layer in dye-sensitized solar cells (DSSCs was demonstrated. The effect of a nanostructure graphene thin film in DSSC structure was examined. The nanostructure graphene thin films provides a great electron transfer channel for the photogenerated electrons from TiO2 to indium tin oxide (ITO glass. Obvious improvements in short-circuit current density of the DSSCs were observed by using the graphene electron transport layer modified photoelectrode. The graphene electron transport layer reduces effectively the back reaction in the interface between the ITO transparent conductive film and the electrolyte in the DSSC.

  14. Electronic structure and electron-phonon coupling in layered copper oxide superconductors

    International Nuclear Information System (INIS)

    Pickett, W.E.; Cohen, R.E.; Krakauer, H.

    1991-01-01

    Experimental data on the layered Cu-O superconductors seem more and more to reflect normal Fermi-liquid behavior and substantial correspondence with band structure predictions. Recent self-consistent, microscopic band theoretic calculations of the electronic structure, lattice instabilities, phonon frequencies, and electron-phonon coupling characteristics and strength for La 2 CuO 4 and YBa 2 Cu 3 O 7 are reviewed. A dominant feature of the coupling is a novel Madelung-like contribution which would be screened out in high density of states superconductors but survives in cuprates because of weak screening. Local density functional theory correctly predicts the instability of (La, Ba) 2 CuO 4 to both the low-temperature orthorhombic phase (below room temperature) and the lower-temperature tetragonal phase (below 50 K). (orig.)

  15. Perceptions of community and family level IDU and HIV related stigma, disclosure decisions and experiences with layered stigma among HIV positive injection drug users in Vietnam

    OpenAIRE

    Rudolph, A.E.; Davis, W.W.; Quan, V.M.; Ha, T.V.; Minh, N.L.; Gregowski, A.; Salter, Megan; Celentano, D.D.; Go, V.

    2011-01-01

    This paper explores how perceived stigma and layered stigma related to injection drug use and being HIV positive influence the decision to disclose one’s HIV status to family and community and experiences with stigma following disclosure among a population of HIV positive male injection drug users (IDUs) in Thai Nguyen, Vietnam. In qualitative interviews conducted between 2007 and 2008, 25 HIV positive male IDUs described layered stigma in their community but an absence of layered stigma with...

  16. Distribution of separated energy and injected charge at normal falling of fast electron beam on target

    CERN Document Server

    Smolyar, V A; Eremin, V V

    2002-01-01

    In terms of a kinetic equation diffusion model for a beam of electrons falling on a target along the normal one derived analytical formulae for distributions of separated energy and injected charge. In this case, no empirical adjustable parameters are introduced to the theory. The calculated distributions of separated energy for an electron plate directed source within infinite medium for C, Al, Sn and Pb are in good consistency with the Spencer data derived on the basis of the accurate solution of the Bethe equation being the source one in assumption of a diffusion model, as well

  17. Distribution of separated energy and injected charge at normal falling of fast electron beam on target

    International Nuclear Information System (INIS)

    Smolyar, V.A.; Eremin, A.V.; Eremin, V.V.

    2002-01-01

    In terms of a kinetic equation diffusion model for a beam of electrons falling on a target along the normal one derived analytical formulae for distributions of separated energy and injected charge. In this case, no empirical adjustable parameters are introduced to the theory. The calculated distributions of separated energy for an electron plate directed source within infinite medium for C, Al, Sn and Pb are in good consistency with the Spencer data derived on the basis of the accurate solution of the Bethe equation being the source one in assumption of a diffusion model, as well [ru

  18. Fluorescence spectral shift of QD films with electron injection: Dependence on counterion proximity

    Science.gov (United States)

    Lu, Meilin; Li, Bo; Zhang, Yaxin; Liu, Weilong; Yang, Yanqiang; Wang, Yuxiao; Yang, Qingxin

    2017-05-01

    Due to the promising application of quantum dot (QD) films in solar cells, LEDs and environmental detectors, the fluorescence of charged QD films has achieved much attention during recent years. In this work, we observe the spectral shift of photoluminescence (PL) in charged CdSe/ZnS QD films controlled by electrochemical potential. The spectral center under negative bias changes from red-shift to blue-shift while introducing smaller inorganic counterions (potassium ions) into the electrolyte. This repeatable effect is attributed to the enhanced electron injection with smaller cations and the electronic perturbations of QD luminescence by these excess charges.

  19. Electron current generated in a toroidal plasma on injection of high-energy neutrals

    International Nuclear Information System (INIS)

    Kolesnichenko, Ya.I.; Reznik, S.N.

    1981-01-01

    Problem of generation of electron current in toroidal plasma with a high-energy ion beam produced during neutral injection has been considered. The analysis was performed on the assumption that plasma is in the regime of rare collisions (banana regime) and ion beam velocity is considerably lower than thermal velocity of plasma ions. Formulae establishing the relation between beam current and electron current have been derived. It follows from them that toroidal affect considerably plasma current generated with the beam and under certain conditions result in changing this current direction in an area remoted from magne-- tic axis [ru

  20. Optoelectronic devices, low temperature preparation methods, and improved electron transport layers

    KAUST Repository

    Eita, Mohamed S.

    2016-08-04

    An optoelectronic device such as a photovoltaic device which has at least one layer, such as an electron transport layer, which comprises a plurality of alternating, oppositely charged layers including metal oxide layers. The metal oxide can be zinc oxide. The plurality of layers can be prepared by layer-by-layer processing in which alternating layers are built up step-by-step due to electrostatic attraction. The efficiency of the device can be increased by this processing method compared to a comparable method like sputtering. The number of layers can be controlled to improve device efficiency. Aqueous solutions can be used which is environmentally friendly. Annealing can be avoided. A quantum dot layer can be used next to the metal oxide layer to form a quantum dot heterojunction solar device.

  1. Mesoscopic Oxide Double Layer as Electron Specific Contact for Highly Efficient and UV Stable Perovskite Photovoltaics.

    Science.gov (United States)

    Tavakoli, Mohammad Mahdi; Giordano, Fabrizio; Zakeeruddin, Shaik Mohammed; Grätzel, Michael

    2018-04-11

    The solar to electric power conversion efficiency (PCE) of perovskite solar cells (PSCs) has recently reached 22.7%, exceeding that of competing thin film photovoltaics and the market leader polycrystalline silicon. Further augmentation of the PCE toward the Shockley-Queisser limit of 33.5% warrants suppression of radiationless carrier recombination by judicious engineering of the interface between the light harvesting perovskite and the charge carrier extraction layers. Here, we introduce a mesoscopic oxide double layer as electron selective contact consisting of a scaffold of TiO 2 nanoparticles covered by a thin film of SnO 2 , either in amorphous (a-SnO 2 ), crystalline (c-SnO 2 ), or nanocrystalline (quantum dot) form (SnO 2 -NC). We find that the band gap of a-SnO 2 is larger than that of the crystalline (tetragonal) polymorph leading to a corresponding lift in its conduction band edge energy which aligns it perfectly with the conduction band edge of both the triple cation perovskite and the TiO 2 scaffold. This enables very fast electron extraction from the light perovskite, suppressing the notorious hysteresis in the current-voltage ( J-V) curves and retarding nonradiative charge carrier recombination. As a result, we gain a remarkable 170 mV in open circuit photovoltage ( V oc ) by replacing the crystalline SnO 2 by an amorphous phase. Because of the quantum size effect, the band gap of our SnO 2 -NC particles is larger than that of bulk SnO 2 causing their conduction band edge to shift also to a higher energy thereby increasing the V oc . However, for SnO 2 -NC there remains a barrier for electron injection into the TiO 2 scaffold decreasing the fill factor of the device and lowering the PCE. Introducing the a-SnO 2 coated mp-TiO 2 scaffold as electron extraction layer not only increases the V oc and PEC of the solar cells but also render them resistant to UV light which forebodes well for outdoor deployment of these new PSC architectures.

  2. PARTICLE-IN-CELL SIMULATION OF A STRONG DOUBLE LAYER IN A NONRELATIVISTIC PLASMA FLOW: ELECTRON ACCELERATION TO ULTRARELATIVISTIC SPEEDS

    International Nuclear Information System (INIS)

    Dieckmann, Mark E.; Bret, Antoine

    2009-01-01

    Two charge- and current-neutral plasma beams are modeled with a one-dimensional particle-in-cell simulation. The beams are uniform and unbounded. The relative speed between both beams is 0.4c. One beam is composed of electrons and protons, and the other of protons and negatively charged oxygen (dust). All species have the temperature 9.1 keV. A Buneman instability develops between the electrons of the first beam and the protons of the second beam. The wave traps the electrons, which form plasmons. The plasmons couple energy into the ion acoustic waves, which trap the protons of the second beam. A structure similar to a proton phase-space hole develops, which grows through its interaction with the oxygen and the heated electrons into a rarefaction pulse. This pulse drives a double layer, which accelerates a beam of electrons to about 50 MeV, which is comparable to the proton kinetic energy. The proton distribution eventually evolves into an electrostatic shock. Beams of charged particles moving at such speeds may occur in the foreshock of supernova remnant (SNR) shocks. This double layer is thus potentially relevant for the electron acceleration (injection) into the diffusive shock acceleration by SNR shocks.

  3. Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes

    Energy Technology Data Exchange (ETDEWEB)

    Martens, M.; Kuhn, C.; Ziffer, E.; Simoneit, T.; Rass, J.; Wernicke, T. [Institute of Solid State Physics, Technische Universität Berlin, Hardenbergstr. 36, EW 6-1, 10623 Berlin (Germany); Kueller, V.; Knauer, A.; Einfeldt, S.; Weyers, M. [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany); Kneissl, M. [Institute of Solid State Physics, Technische Universität Berlin, Hardenbergstr. 36, EW 6-1, 10623 Berlin (Germany); Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

    2016-04-11

    Current injection into AlGaN-based laser diode structures with high aluminum mole fractions for deep ultraviolet emission is investigated. The electrical characteristics of laser diode structures with different p-AlGaN short period superlattice (SPSL) cladding layers with various aluminum mole fractions are compared. The heterostructures contain all elements that are needed for a current-injection laser diode including cladding and waveguide layers as well as an AlGaN quantum well active region emitting near 270 nm. We found that with increasing aluminum content in the p-AlGaN cladding, the diode turn-on voltage increases, while the series resistance slightly decreases. By introducing an SPSL instead of bulk layers, the operating voltage is significantly reduced. A gain guided broad area laser diode structure with transparent p-Al{sub 0.70}Ga{sub 0.30}N waveguide layers and a transparent p-cladding with an average aluminum content of 81% was designed for strong confinement of the transverse optical mode and low optical losses. Using an optimized SPSL, this diode could sustain current densities of more than 4.5 kA/cm{sup 2}.

  4. Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes

    International Nuclear Information System (INIS)

    Martens, M.; Kuhn, C.; Ziffer, E.; Simoneit, T.; Rass, J.; Wernicke, T.; Kueller, V.; Knauer, A.; Einfeldt, S.; Weyers, M.; Kneissl, M.

    2016-01-01

    Current injection into AlGaN-based laser diode structures with high aluminum mole fractions for deep ultraviolet emission is investigated. The electrical characteristics of laser diode structures with different p-AlGaN short period superlattice (SPSL) cladding layers with various aluminum mole fractions are compared. The heterostructures contain all elements that are needed for a current-injection laser diode including cladding and waveguide layers as well as an AlGaN quantum well active region emitting near 270 nm. We found that with increasing aluminum content in the p-AlGaN cladding, the diode turn-on voltage increases, while the series resistance slightly decreases. By introducing an SPSL instead of bulk layers, the operating voltage is significantly reduced. A gain guided broad area laser diode structure with transparent p-Al_0_._7_0Ga_0_._3_0N waveguide layers and a transparent p-cladding with an average aluminum content of 81% was designed for strong confinement of the transverse optical mode and low optical losses. Using an optimized SPSL, this diode could sustain current densities of more than 4.5 kA/cm"2.

  5. A solution-processed binary cathode interfacial layer facilitates electron extraction for inverted polymer solar cells.

    Science.gov (United States)

    Zhang, Xinyuan; Li, Zhiqi; Liu, Chunyu; Guo, Jiaxin; Shen, Liang; Guo, Wenbin

    2018-03-15

    The charge transfer and separation are significantly affected by the electron properties of the interface between the electron-donor layer and the carrier-transporting layer in polymer solar cells (PSCs). In this study, we investigate the electron extraction mechanism of PSCs with a low temperature solution-processed ZnO/PEI as electron transport layer. The incorporation of PEI layer can decrease the work function of ZnO and reduce interfacial barrier, which facilitates electron extraction and suppresses bimolecular recombination, leading to a significant performance enhancement. Furthermore, PEI layer can induce phase separation and passivite inorganic surface trap states as well as shift the interfacial energy offset between metal oxide and organic materials. This work offers a simple and effective way to improve the charge transporting property of organic photovoltaic devices. Copyright © 2017 Elsevier Inc. All rights reserved.

  6. Extremely short relativistic-electron-bunch generation in the laser wakefield via novel bunch injection scheme

    Directory of Open Access Journals (Sweden)

    A. G. Khachatryan

    2004-12-01

    Full Text Available Recently a new electron-bunch injection scheme for the laser wakefield accelerator has been proposed [JETP Lett. 74, 371 (2001JTPLA20021-364010.1134/1.1427124; Phys. Rev. E 65, 046504 (2002PLEEE81063-651X10.1103/PhysRevE.65.046504]. In this scheme, a low energy electron bunch, sent in a plasma channel just before a high-intensity laser pulse, is trapped in the laser wakefield, considerably compressed and accelerated to an ultrarelativistic energy. In this paper we show the possibility of the generation of an extremely short (on the order of 1   μm long or a few femtoseconds in duration relativistic-electron-bunch by this mechanism. The initial electron bunch, which can be generated, for example, by a laser-driven photocathode rf gun, should have an energy of a few hundred keVs to a few MeVs, a duration in the picosecond range or less and a relatively low concentration. The trapping conditions and parameters of an accelerated bunch are investigated. The laser pulse dynamics as well as a possible experimental setup for the demonstration of the injection scheme are also considered.

  7. plasma modes behaviors and electron injection influence in an audio-ultrasonic air gas discharge

    International Nuclear Information System (INIS)

    Ragheb, M.S.; Haleem, N.A.

    2010-01-01

    the main purpose of this study is to investigate the favorable conditions for the production of plasma particle acceleration in an audio-ultrasonic air gas discharge of 20 cm long and 34 mm diameter.it is found that according to the applied conditions the formed plasma changes its behavior and overtakes diverse modes of different characteristics. the pressure, the voltage, and the frequency applied to the plasma determine its proper state. both experimental data collection and optical observations are introduced to clarify and to put in evidence the present plasma facts. the distribution of the electrons density along the plasma tube draws in average the electric field distribution of the ionization waves. in addition, the plasma is studied with and without electrons injection in order to investigate its influence . it is found that the electron injection decreases the plasma intensity and the plasma temperature, while it increases the discharge current. in turn, the decrease of the plasma temperature decreases the plasma oscillations and enhances the plasma instability. on the other hand,the enhancement of the plasma instability performs good conditions for electron acceleration. as a result, the qualified mode for particles acceleration is attained and its conditions are retrieved and defined for that purpose.

  8. Numerical simulation of neutral injection in a hot-electron mirror target plasma

    International Nuclear Information System (INIS)

    Werkoff, F.; Bardet, R.; Briand, P.; Dupas, L.; Gormezano, C.; Melin, G.; Association Euratom-CEA, Centre d'Etudes Nucleaires de Grenoble, 38

    1976-01-01

    In the case of neutral injection into a hot-electron target plasma, the use of the existing Fokker-Planck codes is greatly complicated by the fact that the scale of the energies and times of the confined ions and electrons is very large. To avoid this difficulty, a simplified multi-species model is set up, in which each species is described by time-dependent density and energy equations with analytical approximations for the interactions between the species. During the neutral injection, instantaneous high values of the ambipolar potential (higher than the half value of hot-ion energy) may appear, but do not prevent hot-ion density build-up. However, the hot-electron target plasma must not be maintained for a too long time. Numerical runs are performed with typical target parameters: density 2x10 13 cm -3 , electron energy 30 keV, ion energy 400 eV, time duration during which the target density is maintained 1 ms. Hot-ion density, a few 10 14 cm -3 , can be achieved with a neutral beam of 100 A, 20 keV. (author)

  9. Interfacial Energy Alignment at the ITO/Ultra-Thin Electron Selective Dielectric Layer Interface and Its Effect on the Efficiency of Bulk-Heterojunction Organic Solar Cells.

    Science.gov (United States)

    Itoh, Eiji; Goto, Yoshinori; Saka, Yusuke; Fukuda, Katsutoshi

    2016-04-01

    We have investigated the photovoltaic properties of an inverted bulk heterojunction (BHJ) cell in a device with an indium-tin-oxide (ITO)/electron selective layer (ESL)/P3HT:PCBM active layer/MoOx/Ag multilayered structure. The insertion of only single layer of poly(diallyl-dimethyl-ammonium chloride) (PDDA) cationic polymer film (or poly(ethyleneimine) (PEI) polymeric interfacial dipole layer) and titanium oxide nanosheet (TN) films as an ESL effectively improved cell performance. Abnormal S-shaped curves were observed in the inverted BHJ cells owing to the contact resistance across the ITO/active layer interface and the ITO/PDDA/TN/active layer interface. The series resistance across the ITO/ESL interface in the inverted BHJ cell was successfully reduced using an interfacial layer with a positively charged surface potential with respect to ITO base electrode. The positive dipole in PEI and the electronic charge phenomena at the electrophoretic deposited TN (ED-TN) films on ITO contributed to the reduction of the contact resistance at the electrode interface. The surface potential measurement revealed that the energy alignment by the transfer of electronic charges from the ED-TN to the base electrodes. The insertion of the ESL with a large positive surface potential reduced the potential barrier for the electron injection at ITO/TN interface and it improved the photovoltaic properties of the inverted cell with an ITO/TN/active layer/MoOx/Ag structure.

  10. Atmospheric Signatures and Effects of Space-based Relativistic Electron Beam Injection

    Science.gov (United States)

    Marshall, R. A.; Sanchez, E. R.; Kero, A.; Turunen, E. S.; Marsh, D. R.

    2017-12-01

    Future relativistic electron beam injection experiments have the potential to provide groundbreaking insights into the physics of wave-particle interactions and beam-neutral interactions, relevant to space physics and to fundamental plasma physics. However, these experiments are only useful if their signatures can be detected. In this work, we use a physics-based forward modeling framework to investigate the observable signatures of a relativistic beam interacting with the upper atmosphere. The modeling framework is based around the Electron Precipitation Monte Carlo (EPMC) model, used to simulate electron precipitation in the upper atmosphere. That model is coupled to physics-based models of i) optical emission production; ii) bremsstrahlung photon production and propagation; iii) D-region ion chemistry; and iv) VLF wave propagation in the Earth-ionosphere waveguide. Using these modeling tools, we predict the optical, X-ray, chemical, radar, and VLF signatures of a realistic beam injection, based on recent space-based accelerator designs. In particular, we inject a beam pulse of 10 mA for a duration of 500 μs at an energy of 1 MeV, providing a total pulse energy of 5 J. We further investigate variations in these parameters, in particular the total energy and the electron energy. Our modeling shows that for this 5 J pulse injection at 1 MeV electron energy, the optical signal is easily detectable from the ground in common emission bands, but the X-ray signal is likely too weak to be seen from either balloons or LEO orbiting spacecraft. We further predict the optical signal-to-noise ratio that would be expected in different optical systems. Chemical signatures such as changes to NOx and HOx concentrations are too short-lived to be detectable; however our modeling provides a valuable estimate of the total chemical response. Electron density perturbations should be easily measurable from ground-based high-power radars and via VLF subionospheric remote sensing

  11. Wearable electronics formed on intermediate layer on textiles

    KAUST Repository

    Hussain, Muhammad Mustafa

    2017-01-01

    One manner of producing more desirable clothing with electronic capabilities is to manufacture electronics, such as the charging wires or devices themselves, directly onto the textile materials. Textile materials generally do not support

  12. New injection scheme using a pulsed quadrupole magnet in electron storage rings

    Directory of Open Access Journals (Sweden)

    Kentaro Harada

    2007-12-01

    Full Text Available We demonstrated a new injection scheme using a single pulsed quadrupole magnet (PQM with no pulsed local bump at the Photon Factory Advanced Ring (PF-AR in High Energy Accelerator Research Organization (KEK. The scheme employs the basic property of a quadrupole magnet, that the field at the center is zero, and nonzero elsewhere. The amplitude of coherent betatron oscillation of the injected beam is effectively reduced by the PQM; then, the injected beam is captured into the ring without largely affecting the already stored beam. In order to investigate the performance of the scheme with a real beam, we built the PQM providing a higher field gradient over 3  T/m and a shorter pulse width of 2.4  μs, which is twice the revolution period of the PF-AR. After the field measurements confirmed the PQM specifications, we installed it into the ring. Then, we conducted the experiment using a real beam and consequently succeeded in storing the beam current of more than 60 mA at the PF-AR. This is the first successful beam injection using a single PQM in electron storage rings.

  13. Blue and white phosphorescent organic light emitting diode performance improvement by confining electrons and holes inside double emitting layers

    Energy Technology Data Exchange (ETDEWEB)

    Tsai, Yu-Sheng; Hong, Lin-Ann; Juang, Fuh-Shyang; Chen, Cheng-Yin

    2014-09-15

    In this research, complex emitting layers (EML) were fabricated using TCTA doping hole-transport material in the front half of a bipolar 26DCzPPy as well as PPT doping electron-transport material in the back half of 26DCzPPy. Blue dopant FIrpic was also mixed inside the complex emitting layer to produce a highly efficient blue phosphorescent organic light emitting diode (OLED). The hole and electron injection and carrier recombination rate were effectively increased. The fabricated complex emitting layers exhibited current efficiency of 42 cd/A and power efficiency of 30 lm/W when the luminance was 1000 cd/m{sup 2}, driving voltage was 4.4 V, and current density was 2.4 mA/cm{sup 2}. A white OLED component was then manufactured by doping red dopant [Os(bpftz){sub 2}(PPh{sub 2}Me){sub 2}] (Os) in proper locations. When the Os dopant was doped in between the complex emitting layers, excitons were effectively confined within, increasing the recombination rate and therefore reducing the color shift. The resulting Commission Internationale de L’Eclairage (CIE) coordinates shifted from 4 to 10 V is (Δx=−0.04, Δy=+0.01). The component had a current efficiency of 35.7 cd/A, a power efficiency of 24 lm/W, driving voltage of 4.6 V and a CIE{sub x,y} of (0.31,0.35) at a luminance of 1000 cd/m{sup 2}, with a maximum luminance of 15,600 cd/m{sup 2} at 10 V. Attaching an outcoupling enhancement film was applied to increase the luminance efficiency to 30 lm/W. - Highlights: • Used the complex double emitting layers. • Respectively doped hole and electron transport material in the bipolar host. • Electrons and holes are effectively confined within EMLs to produce excitons.

  14. Blue and white phosphorescent organic light emitting diode performance improvement by confining electrons and holes inside double emitting layers

    International Nuclear Information System (INIS)

    Tsai, Yu-Sheng; Hong, Lin-Ann; Juang, Fuh-Shyang; Chen, Cheng-Yin

    2014-01-01

    In this research, complex emitting layers (EML) were fabricated using TCTA doping hole-transport material in the front half of a bipolar 26DCzPPy as well as PPT doping electron-transport material in the back half of 26DCzPPy. Blue dopant FIrpic was also mixed inside the complex emitting layer to produce a highly efficient blue phosphorescent organic light emitting diode (OLED). The hole and electron injection and carrier recombination rate were effectively increased. The fabricated complex emitting layers exhibited current efficiency of 42 cd/A and power efficiency of 30 lm/W when the luminance was 1000 cd/m 2 , driving voltage was 4.4 V, and current density was 2.4 mA/cm 2 . A white OLED component was then manufactured by doping red dopant [Os(bpftz) 2 (PPh 2 Me) 2 ] (Os) in proper locations. When the Os dopant was doped in between the complex emitting layers, excitons were effectively confined within, increasing the recombination rate and therefore reducing the color shift. The resulting Commission Internationale de L’Eclairage (CIE) coordinates shifted from 4 to 10 V is (Δx=−0.04, Δy=+0.01). The component had a current efficiency of 35.7 cd/A, a power efficiency of 24 lm/W, driving voltage of 4.6 V and a CIE x,y of (0.31,0.35) at a luminance of 1000 cd/m 2 , with a maximum luminance of 15,600 cd/m 2 at 10 V. Attaching an outcoupling enhancement film was applied to increase the luminance efficiency to 30 lm/W. - Highlights: • Used the complex double emitting layers. • Respectively doped hole and electron transport material in the bipolar host. • Electrons and holes are effectively confined within EMLs to produce excitons

  15. Electron Injection from Copper Diimine Sensitizers into TiO2

    DEFF Research Database (Denmark)

    Mara, Michael W.; Bowman, David N.; Buyukcakir, Onur

    2015-01-01

    (I) bis-2,9-diphenylphenanthroline (dpp) complexes [Cu(I)(dpp-O(CH2CH2O)5)(dpp-(COOH)2)]+ and [Cu(I)(dpp-O(CH2CH2O)5)(dpp-(Φ-COOH)2)]+ (Φ = tolyl) with different linker lengths were synthesized in which the MLCT-state solvent quenching pathways are effectively blocked, the lifetime of the singlet MLCT...... spectrum due to the severely flattened ground state, and a long-lived charge-separated Cu(II) has been achieved via ultrafast electron injection (systems does not have significant effect...... on the efficiency of the interfacial electron-transfer process. The mechanisms for electron transfer in these systems are discussed and used to develop new strategies in optimizing copper(I) diimine complexes in solar energy conversion devices....

  16. Electron beam manipulation, injection and acceleration in plasma wakefield accelerators by optically generated plasma density spikes

    Energy Technology Data Exchange (ETDEWEB)

    Wittig, Georg; Karger, Oliver S.; Knetsch, Alexander [Institute of Experimental Physics, University of Hamburg, 22761 Hamburg (Germany); Xi, Yunfeng; Deng, Aihua; Rosenzweig, James B. [Particle Beam Physics Laboratory, UCLA, Los Angeles, CA 90095 (United States); Bruhwiler, David L. [RadiaSoft LLC, Boulder, CO 80304 (United States); RadiaBeam Technologies LLC (United States); Smith, Jonathan [Tech-X UK Ltd, Daresbury, Cheshire WA4 4FS (United Kingdom); Sheng, Zheng-Ming; Jaroszynski, Dino A.; Manahan, Grace G. [Physics Department, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom); Hidding, Bernhard [Institute of Experimental Physics, University of Hamburg, 22761 Hamburg (Germany); Physics Department, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom)

    2016-09-01

    We discuss considerations regarding a novel and robust scheme for optically triggered electron bunch generation in plasma wakefield accelerators [1]. In this technique, a transversely propagating focused laser pulse ignites a quasi-stationary plasma column before the arrival of the plasma wake. This localized plasma density enhancement or optical “plasma torch” distorts the blowout during the arrival of the electron drive bunch and modifies the electron trajectories, resulting in controlled injection. By changing the gas density, and the laser pulse parameters such as beam waist and intensity, and by moving the focal point of the laser pulse, the shape of the plasma torch, and therefore the generated trailing beam, can be tuned easily. The proposed method is much more flexible and faster in generating gas density transitions when compared to hydrodynamics-based methods, and it accommodates experimentalists needs as it is a purely optical process and straightforward to implement.

  17. Vertically aligned carbon nanotubes/diamond double-layered structure for improved field electron emission stability

    Energy Technology Data Exchange (ETDEWEB)

    Yang, L., E-mail: qiaoqin.yang@mail.usask.ca; Yang, Q.; Zhang, C.; Li, Y.S.

    2013-12-31

    A double-layered nanostructure consisting of a layer of vertically aligned Carbon Nanotubes (CNTs) and a layer of diamond beneath has been synthesized on silicon substrate by Hot Filament Chemical Vapor Deposition. The synthesis was achieved by first depositing a layer of diamond on silicon and then depositing a top layer of vertically aligned CNTs by applying a negative bias on the substrate holder. The growth of CNTs was catalyzed by a thin layer of spin-coated iron nitride. The surface morphology and structure of the CNTs/diamond double-layered structure were characterized by Scanning Electron Microscope, Energy Dispersive X-ray spectrum, and Raman Spectroscopy. Their field electron emission (FEE) properties were measured by KEITHLEY 237 high voltage measurement unit, showing much higher FEE current stability than single layered CNTs. - Highlights: • A new double-layered nanostructure consisting of a layer of vertically aligned CNTs and a layer of diamond beneath has been synthesized by hot filament chemical vapor deposition. • This double-layered structure exhibits superior field electron emission stability. • The improvement of emission stability is due to the combination of the unique properties of diamond and CNTs.

  18. Investigation of electronic quality of electrodeposited cadmium sulphide layers from thiourea precursor for use in large area electronics

    Energy Technology Data Exchange (ETDEWEB)

    Ojo, A.A., E-mail: chartell2006@yahoo.com; Dharmadasa, I.M.

    2016-09-01

    CdS layers used in thin film solar cells and other electronic devices are usually grown by wet chemical methods using CdCl{sub 2} as the Cadmium source and either Na{sub 2}S{sub 2}O{sub 3}, NH{sub 4}S{sub 2}O{sub 3} or NH{sub 2}CSNH{sub 2} as Sulphur sources. Obviously, one of the sulphur precursors should produce more suitable CdS layers required to give the highest performing devices. This can only be achieved by comprehensive experimental work on growth and characterisation of CdS layers from the above mentioned sulphur sources. This paper presents the results observed on CdS layers grown by electrodepositing using two electrode configuration and thiourea as the sulphur precursor. X-ray diffraction (XRD), Raman spectroscopy, optical absorption, scanning electron microscopy (SEM), energy-dispersive X-ray analysis (EDX) and photoelectrochemical (PEC) cell methods have been used to characterise the material properties. In order to test and study the electronic device quality of the layers, ohmic and rectifying contacts were fabricated on the electroplated layers. Schottky barriers, formed on the layers were also compared with previously reported work on Chemical Bath Deposited CBD-CdS layers and bulk single crystals of CdS. Comparatively, Schottky diodes fabricated on electroplated CdS layers using two-electrode system and thiourea precursor exhibit excellent electronic properties suitable for electronic devices such as thin film solar panels and large area display devices. - Highlights: • Precipitate-free electrodeposition of CdS is achievable using Thiourea precursor. • Electrodeposition of CdS using 2-electrode configuration. • The electrodeposited CdS shows excellent electronic properties. • Exploration of the effect of heat treatment temperature and heat treatment duration.

  19. The model of beam-plasma discharge in the rocket environment during an electron beam injection in the ionosphere

    International Nuclear Information System (INIS)

    Mishin, E.V.; Ruzhin, Yu.Ya.

    1980-01-01

    The model of beam-plasma discharge in the rocket environment during electron beam injection in the ionosphere is constructed. The discharge plasma density dependence on the neutral gas concentration and the beam parameters is found

  20. Electronic structure and superconductivity of multi-layered organic charge transfer salts

    Energy Technology Data Exchange (ETDEWEB)

    Jeschke, Harald O.; Altmeyer, Michaela; Guterding, Daniel; Valenti, Roser [Institut fuer Theoretische Physik, Goethe-Universitaet Frankfurt, 60438 Frankfurt (Germany)

    2015-07-01

    We examine the electronic properties of polymorphs of (BEDT-TTF){sub 2}Ag(CF{sub 3}){sub 4}(TCE) (1,1,2-trichloroethane) within density functional theory (DFT). While a phase with low superconducting transition temperature T{sub c}=2.6 K exhibits a κ packing motif, two high T{sub c} phases are layered structures consisting of α{sup '} and κ packed layers. We determine the electronic structures and discuss the influence of the insulating α{sup '} layer on the conducting κ layer. In the κ-α{sub 1}{sup '} dual-layered compound, we find that the stripes of high and low charge in the α{sup '} layer correspond to a stripe pattern of hopping parameters in the κ layer. Based on the different underlying Hamiltonians, we study the superconducting properties and try to explain the differences in T{sub c}.

  1. A linear current injection generator for the generation of electrons in a nuclear reactor

    International Nuclear Information System (INIS)

    Kar, Moutushi; Thakur, Satish Kumar; Agiwal, Mamta; Sholapurwala, Zarir H.

    2011-01-01

    While, operating a nuclear reactor it is absolutely necessary for generating a chain reaction or fission. A chain reaction can be initiated by bombardment of a heavy nucleus with fast moving particles. One of the common methods used for generating a fast moving particle is injecting a very high voltage into a particle accelerator and accelerating high energy particle beams using machine like cyclotron, synchrotron, linear accelerators i.e. linac and similar equipment. These equipment generated and run by several high voltage applications like simple high voltage DC systems and supplies or pulsed electron systems. (author)

  2. Annular-cathode electron gun for in-line injection in a racetrack microtron

    International Nuclear Information System (INIS)

    Manca, J.J.; Edmonds, D.S. Jr.; Froelich, H.R.

    1976-01-01

    A compact annular-cathode electron gun which allows direct, efficient injection into the accelerating structure of a racetrack microtron was designed, built, and tested. The gun operates under pulsed conditions with applied high voltages of 40 kV or more and delivers an output current in excess of 1 A. Design and construction details are presented for both a basic gun and a gun with built-in output current monitor. Gun performance in a test chamber and in the multicavity racetrack microtron at the University of Western Ontario is described

  3. Theoretical Study of Ultrafast Electron Injection into a Dye/TiO2 System in Dye-Sensitized Solar Cells

    Science.gov (United States)

    Lin, Chundan; Xia, Qide; Li, Kuan; Li, Juan; Yang, Zhenqing

    2018-06-01

    The ultrafast injection of excited electrons in dye/TiO2 system plays a critical role, which determines the device's efficiency in large part. In this work, we studied the geometrical structures and electronic properties of a dye/TiO2 composite system for dye-sensitized solar cells (DSSCs) by using density functional theory, and we analyzed the mechanism of ultrafast electron injection with emphasis on the power conversion efficiency. The results show that the dye SPL103/TiO2 (101) surface is more stable than dye SPL101. The electron injection driving force of SPL103/TiO2 (101) is 3.55 times that of SPL101, indicating that SPL103/TiO2 (101) has a strong ability to transfer electrons. SPL103 and SPL101/TiO2 (101) both have fast electron transfer processes, and especially the electron injection time of SPL103/TiO2 (101) is only 1.875 fs. The results of this work are expected to provide a new understanding of the mechanism of electron injection in dyes/TiO2 systems for use in highly effective DSSCs.

  4. Optically controlled seeding of Raman forward scattering and injection of electrons in a self-modulated laser-wakefield accelerator

    International Nuclear Information System (INIS)

    Chen, W.-T.; Chien, T.-Y.; Lee, C.-H.; Lin, J.-Y.; Wang, J.; Chen, S.-Y.

    2004-01-01

    Optical seeding of plasma waves and the injection of electrons are key issues in self-modulated laser-wakefield accelerators. By implementing a copropagating laser prepulse with proper timing, we are able to control the growth of Raman forward scattering and the production of accelerated electrons. The dependence of the Raman intensity on prepulse timing indicates that the seeding of Raman forward scattering is dominated by the ionization-induced wakefield, and the dependence of the divergence and number of accelerated electrons further reveals that the stimulated Raman backward scattering of the prepulse plays the essential role of injecting hot electrons into the fast plasma wave driven by the main pulse

  5. Pulse radiolysis based on a femtosecond electron beam and a femtosecond laser light with double-pulse injection technique

    International Nuclear Information System (INIS)

    Yang Jinfeng; Kondoh, Takafumi; Kozawa, Takahiro; Yoshida, Youichi; Tagawa, Seiichi

    2006-01-01

    A new pulse radiolysis system based on a femtosecond electron beam and a femtosecond laser light with oblique double-pulse injection was developed for studying ultrafast chemical kinetics and primary processes of radiation chemistry. The time resolution of 5.2 ps was obtained by measuring transient absorption kinetics of hydrated electrons in water. The optical density of hydrated electrons was measured as a function of the electron charge. The data indicate that the double-laser-pulse injection technique was a powerful tool for observing the transient absorptions with a good signal to noise ratio in pulse radiolysis

  6. Ultrafast Non-Thermal Electron Dynamics in Single Layer Graphene

    Directory of Open Access Journals (Sweden)

    Novoselov K.S.

    2013-03-01

    Full Text Available We study the ultrafast dynamics of non-thermal electron relaxation in graphene upon impulsive excitation. The 10-fs resolution two color pump-probe allows us to unveil the non-equilibrium electron gas decay at early times.

  7. The Time-Dependent Structure of the Electron Reconnection Layer

    Science.gov (United States)

    Hesse, Michael; Zenitani, Seiji; Kuznetsova, Masha; Klimas, Alex

    2009-01-01

    Collisionless magnetic reconnection is often associated with time-dependent behavior. Specifically, current layers in the diffusion region can become unstable to tearing-type instabilities on one hand, or to instabilities with current-aligned wave vectors on the other. In the former case, the growth of tearing instabilities typically leads to the production of magnetic islands, which potentially provide feedback on the reconnection process itself, as well as on the rate of reconnection. The second class of instabilities tend to modulate the current layer along the direction of the current flow, for instance generating kink-type perturbations, or smaller-scale turbulence with the potential to broaden the current layer. All of these processes contribute to rendering magnetic reconnection time-dependent. In this presentation, we will provide a summary of these effects, and a discussion of how much they contribute to the overall magnetic reconnection rate.

  8. Efficiency enhancement of tandem organic light-emitting devices by a combined charge generation layer and organic n-type bis(ethylenedithio)-tetrathiafulvalene-doped electron transport layer

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Jin Taek; Kim, Dae Hun; Koh, Eun Im; Kim, Tae Whan

    2014-11-03

    While the operating voltage of the tandem organic light-emitting devices (OLEDs) with both an organic p-type 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile charge generation layer and a bis(ethylenedithio)-tetrathiafulvalene (BEDT-TTF)-doped 1,3,5-tris(N-phenylbenzimiazole-2-yl)benzene (TPBi) electron transport layer (ETL) was 1.3 V lower than that of the tandem OLEDs with a BEDT-TTF-undoped TPBi ETL. Luminance efficiency of the tandem OLEDs with a BEDT-TTF-doped TPBi ETL was 3.6 cd/A higher than that of the typical OLEDs. The increase in the luminance efficiency and the decrease in the operating voltage of the tandem OLEDs were attributed to improved electron injection due to the insertion of the BEDT-TTF-doped TPBi ETL. - Highlights: • Tandem organic light-emitting diodes (OLED) were fabricated. • OLED fabricated with an n-type bis(ethylenedithio)-tetrathiafulvalene. • Operating voltage of the tandem OLED was decreased from 19.8 to 18.5 V. • Luminance efficiency of the tandem OLED was increased from 31.8 to 35.4 cd/A. • Enhancement of the luminance efficiency in the tandem OLED was achieved.

  9. Efficiency enhancement of tandem organic light-emitting devices by a combined charge generation layer and organic n-type bis(ethylenedithio)-tetrathiafulvalene-doped electron transport layer

    International Nuclear Information System (INIS)

    Cho, Jin Taek; Kim, Dae Hun; Koh, Eun Im; Kim, Tae Whan

    2014-01-01

    While the operating voltage of the tandem organic light-emitting devices (OLEDs) with both an organic p-type 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile charge generation layer and a bis(ethylenedithio)-tetrathiafulvalene (BEDT-TTF)-doped 1,3,5-tris(N-phenylbenzimiazole-2-yl)benzene (TPBi) electron transport layer (ETL) was 1.3 V lower than that of the tandem OLEDs with a BEDT-TTF-undoped TPBi ETL. Luminance efficiency of the tandem OLEDs with a BEDT-TTF-doped TPBi ETL was 3.6 cd/A higher than that of the typical OLEDs. The increase in the luminance efficiency and the decrease in the operating voltage of the tandem OLEDs were attributed to improved electron injection due to the insertion of the BEDT-TTF-doped TPBi ETL. - Highlights: • Tandem organic light-emitting diodes (OLED) were fabricated. • OLED fabricated with an n-type bis(ethylenedithio)-tetrathiafulvalene. • Operating voltage of the tandem OLED was decreased from 19.8 to 18.5 V. • Luminance efficiency of the tandem OLED was increased from 31.8 to 35.4 cd/A. • Enhancement of the luminance efficiency in the tandem OLED was achieved

  10. Recent results on the beat wave acceleration of externally injected electrons on a plasma

    International Nuclear Information System (INIS)

    Clayton, C.E.; Marsh, K.; Dyson, A.; Everett, M.; Lal, A.; Josh, C.; Williams, R.; Katsouleas, T.

    1992-01-01

    In the Plasma Beat Wave Accelerator (PBWA) two laser beams of slightly different frequencies resonantly beat in a plasma in such a way that their frequency and wavenumber differences correspond to the plasma wave frequency and wavenumber. The amplitude-modulated electromagnetic wave envelope of the laser pulse exerts a periodic nonlinear force on the plasma electrons, causing them to bunch. The resulting space-charge wave can have a phase velocity nearly equal to the speed of light. If an electron bunch is injected with a velocity close to this it can be trapped and accelerated. The UCLA program investigating PBWA has found that tunnel or multi-photon ionized plasmas a re homogeneous enough for coherent macroscopic acceleration. The laser pulse should be short, and the peak laser intensity should be such that Iλ 2 ∼ 2 x 10 16 W/cm 2 μm 2 in order to get substantial beat wave amplitudes. tab., 3 refs

  11. Complex (Nonstandard) Six-Layer Polytypes of Lizardite Revealed from Oblique-Texture Electron Diffraction Patterns

    International Nuclear Information System (INIS)

    Zhukhlistov, A.P.; Zinchuk, N.N.; Kotel'nikov, D.D.

    2004-01-01

    Association of simple (1T and 3R) and two complex (nonstandard) orthogonal polytypes of the serpentine mineral lizardite from the Catoca kimberlite pipe (West Africa) association is revealed from oblique-texture electron diffraction patterns. A six-layer polytype with an ordered superposition of equally oriented layers (notation 3 2 3 2 3 4 3 4 3 6 3 6 or ++ - -00) belonging to the structural group A and a three-layer (336 or I,I,II) or a six-layer (336366 or I,I,II,I,II,II) polytype with alternating oppositely oriented layers and semi-disordered structure are identified using polytype analysis

  12. Effect of Vavilov–Cherenkov radiation cone transformation upon entry of a relativistic electron into a substance layer

    Energy Technology Data Exchange (ETDEWEB)

    Kishchin, I. A.; Kubankin, A. S., E-mail: kubankin@bsu.edu.ru; Nikulicheva, T. B.; Al-Omari; Sotnikov, A. V.; Starovoitov, A. S. [Belgorod National Research University (Russian Federation)

    2016-12-15

    Transformation of the Vavilov–Cherenkov radiation cone under grazing interaction of a relativistic electron with a layer of substance is theoretically studied. It is shown that this effect can occur when the electron enters the substance layer.

  13. Operating Organic Electronics via Aqueous Electric Double Layers

    OpenAIRE

    Toss, Henrik

    2015-01-01

    The field of organic electronics emerged in the 1970s with the discovery of conducting polymers. With the introduction of plastics as conductors and semiconductors came many new possibilities both in production and function of electronic devices. Polymers can often be processed from solution and their softness provides both the possibility of working on flexible substrates, and various advantages in interfacing with other soft materials, e.g. biological samples and specimens. Conducting polym...

  14. Stability Analysis of High-Speed Boundary-Layer Flow with Gas Injection

    Science.gov (United States)

    2014-06-01

    laminar-turbulent transition on slender bodies in a hypersonic flow at small angles of attack is caused by amplification of acoustic waves trapped in...x decreases and slowly approaches the no-blow distribution. These CFD data demonstrate that the injection strongly affects the near-wall flow...conclusion. Figure 10 shows that the spatial growth rates ( )  are maximal for mode 0 corresponding to the Mack second mode – typical for hypersonic

  15. Generalized expressions for variations in critical frequencies, electron densities and altitudes of the ionospheric layers

    International Nuclear Information System (INIS)

    Njau, E.C.

    1990-12-01

    We develop generalized mathematical expressions for time and space variations of peak electron densities of the ionospheric D, E, F1 and F2 layers as well as corresponding variations in the altitudes of the electron density peaks in each of these layers. On the basis of the Chapman characteristics of the E and F1 layers and other techniques, a generalized expression is developed for the electron density height profile of each of the four ionospheric layers. Consequently a generalized mathematical expression is developed for the entire electron density height profile of the whole ionosphere as a function of time, latitude and longitude. The latter mathematical expression may be used to compute or predict ionospheric parameters associated with ratio and satellite communications. Finally we show that some well documented equations on ionospheric parameters are simplified (or approximated) versions of some of our mathematical expressions. (author). 29 refs

  16. On the gyro resonance electron-whistler interaction in transition layers of near-earth plasma

    International Nuclear Information System (INIS)

    Erokhin, N.S.; Zol'nikova, N.N.; Mikhajlovskaya, L.A.

    1996-01-01

    Gyro resonance interaction of electrons with low amplitude triggered whistler in the transition layers of the ionospheric and magnetospheric plasma that correspond to the blurred jumps of the magnetic field and plasma concentration was studied

  17. Local Electronic Structure of a Single-Layer Porphyrin-Containing Covalent Organic Framework

    KAUST Repository

    Chen, Chen; Joshi, Trinity; Li, Huifang; Chavez, Anton D.; Pedramrazi, Zahra; Liu, Pei-Nian; Li, Hong; Dichtel, William R.; Bredas, Jean-Luc; Crommie, Michael F.

    2017-01-01

    We have characterized the local electronic structure of a porphyrin-containing single-layer covalent organic framework (COF) exhibiting a square lattice. The COF monolayer was obtained by the deposition of 2,5-dimethoxybenzene-1,4-dicarboxaldehyde

  18. Fuelling regulation with Electronic fuel injection for small spark ignition engine using Fuzzy Logic

    International Nuclear Information System (INIS)

    Shah, S.R.; Sahir, M.H.

    2004-01-01

    The use of Electronic Control systems in automotive applications gives the design engineer greater control over various processes compared with mechanical methods Examples of such electronic control systems are Electronic Fuel Injection (EFI), Traction Control Systems (TCS) and Anti-lock Braking Systems (ABS). In addition, the development of inexpensive and fast microcontrollers has remarkably improve, performance of passive and active safety systems of automobiles, without causing excessive increase in prices of vehicles -a favourable factor from the consumer's perspective. This paper deals with a possible electronic aid for the improvement of power control in a motorcycle. Controlling the speed and power of a motorcycle is difficult; especially on bumpy and uneven terrain. In this paper, the development of an EPI system is discussed, incorporating artificial intelligence to regulate the fuel supplied to the engine. It would minimize wheel slippage and jerky and sudden acceleration which potentially dangerous. It would also reduce production of large quantities of pollutant like hydrocarbons and carbon monoxide. Fuel consumption would also improve during stop-and-go traffic. (author)

  19. Tomographic Imaging of Water Injection and Withdrawal in PEMFC Gas Diffusion Layers

    Energy Technology Data Exchange (ETDEWEB)

    McGill U; Gostick, J. T.; Gunterman, H. P.; Weber, A. Z.; Newman, J. S.; Kienitz, B. L.; MacDowell, A. A.

    2010-06-25

    X-ray computed tomography was used to visualize the water configurations inside gas diffusion layers for various applied capillary pressures, corresponding to both water invasion and withdrawal. A specialized sample holder was developed to allow capillary pressure control on the small-scale samples required. Tests were performed on GDL specimens with and without hydrophobic treatments.

  20. An analysis of the SCEX 3 ionospheric electron beam injection experiment

    International Nuclear Information System (INIS)

    Goerke, R.T.

    1992-01-01

    The SCEX 3 experiment (Several Compatible EXperiments using a rocket-borne accelerator) was carried to ionospheric altitudes (375 km) by a Black Brant 11 rocket on February 1, 1990. The experiment was launched from Poker Flat Research Range (65.1 degree N, 147.5 degree W) at 1207 UT. The payload split into two parts (hereafter forward and aft payloads) 116 seconds after launch. The aft payload carried two electron accelerators as well as several diagnostic instruments. The forward payload was ejected at an angle of 6 degree with the magnetic field in a northwesterly direction. This payload carried a multiband plasma wave receiver and various particle detectors to make in situ measurements of the Beam Plasma Interaction (BPI) region. Two Throw Away Detectors (TAD's 1 and 2) were also ejected from the aft payload in the east and west directions respectively. TAD 1 also carried a multiband plasma wave receiver. Preceding the launch an auroral arch along the southern boundary of a diffuse auroral patch suddenly brightened, split into two separate arcs and moved to a position north of the rocket's trajectory. SCEX 3 was launched into an active breakup aurora consisting of tall rays and diffuse patches. The purpose of this experiment were (1) to observe injected electrons reflected from the naturally occurring parallel electric field structures which are thought to accelerate the auroral electron, (2) to observe a variety of plasma effects caused by the artificial electron beam and the associated spacecraft charging, and (3) study the natural phenomena associated with auroral activity. This work is a summary of the interesting observations made by the SCEX 3 experiment. These observations include VHF emissions produced by the electron beam via the Beam Plasma Discharge (BPD), Diffuse resonance emissions by the hot plasma region surrounding the electron beam and auroral Z-mode emissions

  1. Formation of presheath and current-free double layer in a two-electron-temperature plasma

    International Nuclear Information System (INIS)

    Sato, Kunihiro; Miyawaki, Fujio

    1992-02-01

    Development of the steady-state potential in a two-temperature-electron plasma in contact with the wall is investigated analytically. It is shown that if the hot- to cold electron temperature ratio is greater than ten, the potential drop in the presheath, which is allowed to have either a small value characterized by the cold electrons or a large value by the hot electrons, discontinuously changes at a critical value for the hot- to total electron density ratio. It is also found that the monotonically decreasing potential structure which consists of the first presheath, a current-free double layer, the second presheath, and the sheath can be steadily formed in a lower range of the hot- to total electron density ratio around the critical value. The current-free double layer is set up due to existence of the two electron species and cold ions generated by ionization so as to connect two presheath potentials at different levels. (author)

  2. Interlayer electron-hole pair multiplication by hot carriers in atomic layer semiconductor heterostructures

    Science.gov (United States)

    Barati, Fatemeh; Grossnickle, Max; Su, Shanshan; Lake, Roger; Aji, Vivek; Gabor, Nathaniel

    Two-dimensional heterostructures composed of atomically thin transition metal dichalcogenides provide the opportunity to design novel devices for the study of electron-hole pair multiplication. We report on highly efficient multiplication of interlayer electron-hole pairs at the interface of a tungsten diselenide / molybdenum diselenide heterostructure. Electronic transport measurements of the interlayer current-voltage characteristics indicate that layer-indirect electron-hole pairs are generated by hot electron impact excitation. Our findings, which demonstrate an efficient energy relaxation pathway that competes with electron thermalization losses, make 2D semiconductor heterostructures viable for a new class of hot-carrier energy harvesting devices that exploit layer-indirect electron-hole excitations. SHINES, an Energy Frontier Research Center funded by the U.S. Department of Energy, Air Force Office of Scientific Research.

  3. Numerical simulation of the processes of small-diameter high-current electron beam shaping and injection

    CERN Document Server

    Gordeev, V S; Myskov, G A

    2001-01-01

    With the aid of BEAM 25 program there was carried out the numerical simulation of the non-stationary process of shaping a small-diameter (<= 20mm) high-current hollow electron beam in a diode with magnetic insulation,as well as of the process of beam injection into the accelerating LIA track. The diode configuration for the purpose of eliminating the leakage of electron flux to the anode surface was update. Presented are the results of calculation of the injected beam characteristics (amplitude-time parameters of a current pulse, space-angle distributions of electrons etc.) depending on diode geometric parameters.

  4. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer

    Science.gov (United States)

    Chavarkar, Prashant; Smorchkova, Ioulia P.; Keller, Stacia; Mishra, Umesh; Walukiewicz, Wladyslaw; Wu, Yifeng

    2005-02-01

    A Group III nitride based high electron mobility transistors (HEMT) is disclosed that provides improved high frequency performance. One embodiment of the HEMT comprises a GaN buffer layer, with an Al.sub.y Ga.sub.1-y N (y=1 or y 1) layer on the GaN buffer layer. An Al.sub.x Ga.sub.1-x N (0.ltoreq.x.ltoreq.0.5) barrier layer on to the Al.sub.y Ga.sub.1-y N layer, opposite the GaN buffer layer, Al.sub.y Ga.sub.1-y N layer having a higher Al concentration than that of the Al.sub.x Ga.sub.1-x N barrier layer. A preferred Al.sub.y Ga.sub.1-y N layer has y=1 or y.about.1 and a preferred Al.sub.x Ga.sub.1-x N barrier layer has 0.ltoreq.x.ltoreq.0.5. A 2DEG forms at the interface between the GaN buffer layer and the Al.sub.y Ga.sub.1-y N layer. Respective source, drain and gate contacts are formed on the Al.sub.x Ga.sub.1-x N barrier layer. The HEMT can also comprising a substrate adjacent to the buffer layer, opposite the Al.sub.y Ga.sub.1-y N layer and a nucleation layer between the Al.sub.x Ga.sub.1-x N buffer layer and the substrate.

  5. The growth and electronic structure of azobenzene-based functional molecules on layered crystals

    International Nuclear Information System (INIS)

    Iwicki, J; Ludwig, E; Buck, J; Kalläne, M; Kipp, L; Rossnagel, K; Köhler, F; Herges, R

    2012-01-01

    In situ ultraviolet photoelectron spectroscopy is used to study the growth of ultrathin films of azobenzene-based functional molecules (azobenzene, Disperse Orange 3 and a triazatriangulenium platform with an attached functional azo-group) on the layered metal TiTe 2 and on the layered semiconductor HfS 2 at liquid nitrogen temperatures. Effects of intermolecular interactions, of the substrate electronic structure, and of the thermal energy of the sublimated molecules on the growth process and on the adsorbate electronic structure are identified and discussed. A weak adsorbate-substrate interaction is particularly observed for the layered semiconducting substrate, holding the promise of efficient molecular photoswitching.

  6. Solid particle effects on heat transfer in a multi-layered molten pool with gas injection

    International Nuclear Information System (INIS)

    Bilbao y Leon, Rosa Marina; Corradini, Michael L.

    2006-01-01

    In the very unlikely event of a severe reactor accident involving core melt and pressure vessel failure, it is important to identify the circumstances that would allow the molten core material to cool down and resolidify, bringing core debris to a stable coolable state. To achieve this, it has been proposed to flood the cavity with water from above forming a layered structure where upward heat loss from the molten pool to the water will cause the core material to quench and solidify. In this situation the molten pool would become a three-phase mixture: e.g., a solid and liquid slurry formed by the molten pool as it cools to a temperature below the temperature of liquidus, agitated by the gases formed in the concrete ablation process. The present work quantifies the partition of the heat losses upward and downward in this multi-layered configuration, considering the influence of the viscosity and the solid fraction in the pool, from test data obtained from intermediate scale experiments at the University of Wisconsin-Madison. These experimental results show heat transfer behavior for multi-layered pools for a range of viscosities and solid fractions. These results are compared to previous experimental studies and well known correlations and models

  7. Electronic structure, transport, and collective effects in molecular layered systems

    Directory of Open Access Journals (Sweden)

    Torsten Hahn

    2017-10-01

    Full Text Available The great potential of organic heterostructures for organic device applications is exemplified by the targeted engineering of the electronic properties of phthalocyanine-based systems. The transport properties of two different phthalocyanine systems, a pure copper phthalocyanine (CoPc and a flourinated copper phthalocyanine–manganese phthalocyanine (F16CoPc/MnPc heterostructure, are investigated by means of density functional theory (DFT and the non-equilibrium Green’s function (NEGF approach. Furthermore, a master-equation-based approach is used to include electronic correlations beyond the mean-field-type approximation of DFT. We describe the essential theoretical tools to obtain the parameters needed for the master equation from DFT results. Finally, an interacting molecular monolayer is considered within a master-equation approach.

  8. Electronic THz-spectrometer for plasmonic enhanced deep subwavelength layer detection

    NARCIS (Netherlands)

    Berrier, A.; Schaafsma, M.C.; Gómez Rivas, J.; Schäfer-Eberwein, H.; Haring Bolivar, P.; Tripodi, L.; Matters-Kammerer, M.K.

    2015-01-01

    We demonstrate the operation of a miniaturized all-electronic CMOS based THz spectrometer with performances comparable to that of a THz-TDS spectrometer in the frequency range 20 to 220 GHz. The use of this all-electronic THz spectrometer for detection of a thin TiO2 layer and a B. subtilis bacteria

  9. Tail state-assisted charge injection and recombination at the electron-collecting interface of P3HT:PCBM bulk-heterojunction polymer solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wang, He [Department of Chemical and Biological Engineering, Princeton University, Princeton, NJ 08544 (United States); Department of Electrical Engineering, Princeton University, Princeton, NJ 08544 (United States); Shah, Manas [Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Ganesan, Venkat [Department of Chemical Engineering, University of Texas at Austin, Austin, TX 78712 (United States); Chabinyc, Michael L. [Materials Department, University of California Santa Barbara, CA 93106 (United States); Loo, Yueh-Lin [Department of Chemical and Biological Engineering, Princeton University, Princeton, NJ 08544 (United States)

    2012-12-15

    The systematic insertion of thin films of P3HT and PCBM at the electron- and hole-collecting interfaces, respectively, in bulk-heterojunction polymer solar cells results in different extents of reduction in device characteristics, with the insertion of P3HT at the electron-collecting interface being less disruptive to the output currents compared to the insertion of PCBM at the hole-collecting interface. This asymmetry is attributed to differences in the tail state-assisted charge injection and recombination at the active layer-electrode interfaces. P3HT exhibits a higher density of tail states compared to PCBM; holes in these tail states can thus easily recombine with electrons at the electron-collection interface during device operation. This process is subsequently compensated by the injection of holes from the cathode into these tail states, which collectively enables net current flow through the polymer solar cell. The study presented herein thus provides a plausible explanation for why preferential segregation of P3HT to the cathode interface is inconsequential to device characteristics in P3HT:PCBM bulk-heterojunction solar cells. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Modeling and Experiments on Injection into University of Maryland Electron Ring

    International Nuclear Information System (INIS)

    Bai, G.; Kishek, R. A.; Beaudoin, B.; Bernal, S.; Feldman, D.; Godlove, T.; Haber, I.; Quinn, B.; Reiser, M.; Sutter, D.; Walter, M.; O'Shea, P. G.

    2006-01-01

    The University of Maryland Electron Ring (UMER) is built as a low-cost testbed for intense beam physics for benefit of larger ion accelerators. The beam intensity is designed to be variable, spanning the entire range from low current operation to highly space-charge-dominated transport. The ring has been closed and multi-turn commissioning has begun. One of the biggest challenges of multi-turn operation of UMER is correctly operating the Y-shaped injection/recirculation section, which is specially designed for UMER multi-turn operation. It is a challenge because the system requires several quadrupoles and dipoles in a very stringent space, resulting in mechanical, electrical, and beam control complexities. Also, the Earth's magnetic field and the image charge effects have to be investigated because they are strong enough to impact the beam centroid motion. This paper presents both simulation and experimental study of the beam centroid motion in the injection region to address above issues

  11. Development and characterization of plasma targets for controlled injection of electrons into laser-driven wakefields

    Science.gov (United States)

    Kleinwaechter, Tobias; Goldberg, Lars; Palmer, Charlotte; Schaper, Lucas; Schwinkendorf, Jan-Patrick; Osterhoff, Jens

    2012-10-01

    Laser-driven wakefield acceleration within capillary discharge waveguides has been used to generate high-quality electron bunches with GeV-scale energies. However, owing to fluctuations in laser and plasma conditions in combination with a difficult to control self-injection mechanism in the non-linear wakefield regime these bunches are often not reproducible and can feature large energy spreads. Specialized plasma targets with tailored density profiles offer the possibility to overcome these issues by controlling the injection and acceleration processes. This requires precise manipulation of the longitudinal density profile. Therefore our target concept is based on a capillary structure with multiple gas in- and outlets. Potential target designs are simulated using the fluid code OpenFOAM and those meeting the specified criteria are fabricated using femtosecond-laser machining of structures into sapphire plates. Density profiles are measured over a range of inlet pressures utilizing gas-density profilometry via Raman scattering and pressure calibration with longitudinal interferometry. In combination these allow absolute density mapping. Here we report the preliminary results.

  12. Electron density profile determination by means of laser blow-off injected neutral beam

    International Nuclear Information System (INIS)

    Kocsis, G.; Bakos, J.S.; Ignacz, P.N.; Kardon, B.; Koltai, L.; Veres, G.

    1992-01-01

    This paper is devoted to the experimental and theoretical studies of the determination of the electron density profiles by means of laser blow-off neutrals. For the determination of the density profile the time and spatial distributions of the spectral line radiation intensity of the injected neutrals are used. The method is compared to other previously proposed methods and the advantages and disadvantages of the different methods are discussed. The result of the comparison is that our method gives the most reliable result with the highest temporal resolution for the density profile of the edge plasma. The only disadvantage is the need of careful calibration of the sensitivity of the spatial channels. The advantage is the ability of the method as a standard diagnostic. (orig.)

  13. Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Golnaz Karbasian

    2017-03-01

    Full Text Available Single electron transistors are nanoscale electron devices that require thin, high-quality tunnel barriers to operate and have potential applications in sensing, metrology and beyond-CMOS computing schemes. Given that atomic layer deposition is used to form CMOS gate stacks with low trap densities and excellent thickness control, it is well-suited as a technique to form a variety of tunnel barriers. This work is a review of our recent research on atomic layer deposition and post-fabrication treatments to fabricate metallic single electron transistors with a variety of metals and dielectrics.

  14. Equilibrium and stability properties of relativistic electron rings and E-layers

    International Nuclear Information System (INIS)

    Uhm, H.

    1976-01-01

    Equilibrium and stability properties of magnetically confined partially-neutralized thin electron ring and E-layer are investigated using the Vlasov-Maxwell equations. The analysis is carried out within the context of the assumption that the minor dimensions (a,b) of the system are much less than the collisionless skin depth (c/antiω/sub p/). The equilibrium configuration of the E-layer is assumed to be an infinitely long, azimuthally symmetric hollow electron beam which is aligned parallel to a uniform axial magnetic field. On the other hand, the electron ring is located at the midplane of an externally imposed mirror field which acts to confine the ring both axially and radially. The equilibrium properties of the E-layer and electron ring are obtained self-consistently for several choices of equilibrium electron distribution function. The negative-mass instability analysis is carried out for the relativistic E-layer equilibrium in which all of the electrons have the same transverse energy and a spread in canonical angular momentum, assuming a fixed ion background. The ion resonance instability properties are investigated for a relativistic nonneutral E-layer aligned parallel to a uniform magnetic field and located between two ground coaxial cylindrical conductors. The stability properties of a nonrelativistic electron ring is investigated within the framework of the linearized Vlasov-Poisson equations. The dispersion relation is obtained for the self-consistent electron distribution function in which all electrons have the same value of energy an the same value of canonical angular momentum. The positive ions in the electron ring are assumed to form an immobile partially neutralizing background. The stability criteria as well as the instability growth rates are derived and discussed including the effect of geometrical configuration of the system. Equilibrium space-charge effects play a significant role in stability behavior

  15. Electron energy distribution function in the divertor region of the COMPASS tokamak during neutral beam injection heating

    Science.gov (United States)

    Hasan, E.; Dimitrova, M.; Havlicek, J.; Mitošinková, K.; Stöckel, J.; Varju, J.; Popov, Tsv K.; Komm, M.; Dejarnac, R.; Hacek, P.; Panek, R.; the COMPASS Team

    2018-02-01

    This paper presents the results from swept probe measurements in the divertor region of the COMPASS tokamak in D-shaped, L-mode discharges, with toroidal magnetic field BT = 1.15 T, plasma current Ip = 180 kA and line-average electron densities varying from 2 to 8×1019 m-3. Using neutral beam injection heating, the electron energy distribution function is studied before and during the application of the beam. The current-voltage characteristics data are processed using the first-derivative probe technique. This technique allows one to evaluate the plasma potential and the real electron energy distribution function (respectively, the electron temperatures and densities). At the low average electron density of 2×1019 m-3, the electron energy distribution function is bi-Maxwellian with a low-energy electron population with temperatures 4-6 eV and a high-energy electron group 12-25 eV. As the line-average electron density is increased, the electron temperatures decrease. At line-average electron densities above 7×1019 m-3, the electron energy distribution function is found to be Maxwellian with a temperature of 6-8.5 eV. The effect of the neutral beam injection heating power in the divertor region is also studied.

  16. Transport of energetic electrons in a magnetically expanding helicon double layer plasma

    International Nuclear Information System (INIS)

    Takahashi, Kazunori; Charles, Christine; Boswell, Rod; Cox, Wes; Hatakeyama, Rikizo

    2009-01-01

    Peripheral magnetic field lines extending from the plasma source into the diffusion chamber are found to separate two regions of Maxwellian electron energy probability functions: the central, ion-beam containing region with an electron temperature of 5 eV, and region near the chamber walls with electrons at 3 eV. Along the peripheral field lines a bi-Maxwellian population with a hot tail at 9 eV is shown to both originate from electrons in the source traveling downstream across the double layer and correspond to a local maximum in ion and electron densities.

  17. Long-lasting injection of solar energetic electrons into the heliosphere

    Science.gov (United States)

    Dresing, N.; Gómez-Herrero, R.; Heber, B.; Klassen, A.; Temmer, M.; Veronig, A.

    2018-05-01

    Context. The main sources of solar energetic particle (SEP) events are solar flares and shocks driven by coronal mass ejections (CMEs). While it is generally accepted that energetic protons can be accelerated by shocks, whether or not these shocks can also efficiently accelerate solar energetic electrons is still debated. In this study we present observations of the extremely widespread SEP event of 26 Dec 2013 To the knowledge of the authors, this is the widest longitudinal SEP distribution ever observed together with unusually long-lasting energetic electron anisotropies at all observer positions. Further striking features of the event are long-lasting SEP intensity increases, two distinct SEP components with the second component mainly consisting of high-energy particles, a complex associated coronal activity including a pronounced signature of a shock in radio type-II observations, and the interaction of two CMEs early in the event. Aims: The observations require a prolonged injection scenario not only for protons but also for electrons. We therefore analyze the data comprehensively to characterize the possible role of the shock for the electron event. Methods: Remote-sensing observations of the complex solar activity are combined with in situ measurements of the particle event. We also apply a graduated cylindrical shell (GCS) model to the coronagraph observations of the two associated CMEs to analyze their interaction. Results: We find that the shock alone is likely not responsible for this extremely wide SEP event. Therefore we propose a scenario of trapped energetic particles inside the CME-CME interaction region which undergo further acceleration due to the shock propagating through this region, stochastic acceleration, or ongoing reconnection processes inside the interaction region. The origin of the second component of the SEP event is likely caused by a sudden opening of the particle trap.

  18. Vertical electron transport in van der Waals heterostructures with graphene layers

    International Nuclear Information System (INIS)

    Ryzhii, V.; Otsuji, T.; Ryzhii, M.; Aleshkin, V. Ya.; Dubinov, A. A.; Mitin, V.; Shur, M. S.

    2015-01-01

    We propose and analyze an analytical model for the self-consistent description of the vertical electron transport in van der Waals graphene-layer (GL) heterostructures with the GLs separated by the barriers layers. The top and bottom GLs serve as the structure emitter and collector. The vertical electron transport in such structures is associated with the propagation of the electrons thermionically emitted from GLs above the inter-GL barriers. The model under consideration describes the processes of the electron thermionic emission from and the electron capture to GLs. It accounts for the nonuniformity of the self-consistent electric field governed by the Poisson equation which accounts for the variation of the electron population in GLs. The model takes also under consideration the cooling of electrons in the emitter layer due to the Peltier effect. We find the spatial distributions of the electric field and potential with the high-electric-field domain near the emitter GL in the GL heterostructures with different numbers of GLs. Using the obtained spatial distributions of the electric field, we calculate the current-voltage characteristics. We demonstrate that the Peltier cooling of the two-dimensional electron gas in the emitter GL can strongly affect the current-voltage characteristics resulting in their saturation. The obtained results can be important for the optimization of the hot-electron bolometric terahertz detectors and different devices based on GL heterostructures

  19. Layered memristive and memcapacitive switches for printable electronics

    Science.gov (United States)

    Bessonov, Alexander A.; Kirikova, Marina N.; Petukhov, Dmitrii I.; Allen, Mark; Ryhänen, Tapani; Bailey, Marc J. A.

    2015-02-01

    Novel computing technologies that imitate the principles of biological neural systems may offer low power consumption along with distinct cognitive and learning advantages. The development of reliable memristive devices capable of storing multiple states of information has opened up new applications such as neuromorphic circuits and adaptive systems. At the same time, the explosive growth of the printed electronics industry has expedited the search for advanced memory materials suitable for manufacturing flexible devices. Here, we demonstrate that solution-processed MoOx/MoS2 and WOx/WS2 heterostructures sandwiched between two printed silver electrodes exhibit an unprecedentedly large and tunable electrical resistance range from 102 to 108 Ω combined with low programming voltages of 0.1-0.2 V. The bipolar resistive switching, with a concurrent capacitive contribution, is governed by an ultrathin (mechanisms of synaptic plasticity are implemented by applying a sequence of electrical pulses.

  20. Silver nanoparticles as a key feature of a plasma polymer composite layer in mitigation of charge injection into polyethylene under dc stress

    International Nuclear Information System (INIS)

    Milliere, L; Makasheva, K; Laurent, C; Despax, B; Boudou, L; Teyssedre, G

    2016-01-01

    The aim of this work is to limit charge injection from a semi-conducting electrode into low density polyethylene (LDPE) under dc field by tailoring the polymer surface using a silver nanoparticles-containing layer. The layer is composed of a plane of silver nanoparticles embedded in a semi-insulating organosilicon matrix deposited on the polyethylene surface by a plasma process. Size, density and surface coverage of the nanoparticles are controlled through the plasma process. Space charge distribution in 300 μm thick LDPE samples is measured by the pulsed-electroacoustic technique following a short term (step-wise voltage increase up to 50 kV mm −1 , 20 min in duration each, followed by a polarity inversion) and a longer term (up to 12 h under 40 kV mm −1 ) protocols for voltage application. A comparative study of space charge distribution between a reference polyethylene sample and the tailored samples is presented. It is shown that the barrier effect depends on the size distribution and the surface area covered by the nanoparticles: 15 nm (average size) silver nanoparticles with a high surface density but still not percolating form an efficient barrier layer that suppress charge injection. It is worthy to note that charge injection is detected for samples tailored with (i) percolating nanoparticles embedded in organosilicon layer; (ii) with organosilicon layer only, without nanoparticles and (iii) with smaller size silver particles (<10 nm) embedded in organosilicon layer. The amount of injected charges in the tailored samples increases gradually in the samples ranking given above. The mechanism of charge injection mitigation is discussed on the basis of complementary experiments carried out on the nanocomposite layer such as surface potential measurements. The ability of silver clusters to stabilize electrical charges close to the electrode thereby counterbalancing the applied field appears to be a key factor in explaining the charge injection

  1. Nonlinear electron acoustic structures generated on the high-potential side of a double layer

    Directory of Open Access Journals (Sweden)

    R. Pottelette

    2009-04-01

    Full Text Available High-time resolution measurements of the electron distribution function performed in the auroral upward current region reveals a large asymmetry between the low- and high-potential sides of a double-layer. The latter side is characterized by a large enhancement of a locally trapped electron population which corresponds to a significant part (~up to 30% of the total electron density. As compared to the background hot electron population, this trapped component has a very cold temperature in the direction parallel to the static magnetic field. Accordingly, the differential drift between the trapped and background hot electron populations generates high frequency electron acoustic waves in a direction quasi-parallel to the magnetic field. The density of the trapped electron population can be deduced from the frequency where the electron acoustic spectrum maximizes. In the auroral midcavity region, the electron acoustic waves may be modulated by an additional turbulence generated in the ion acoustic range thanks to the presence of a pre-accelerated ion beam located on the high-potential side of the double layer. Electron holes characterized by bipolar pulses in the electric field are sometimes detected in correlation with these electron acoustic wave packets.

  2. Long-lasting solar energetic electron injection during the 26 Dec 2013 widespread SEP event

    Science.gov (United States)

    Dresing, N.; Klassen, A.; Temmer, M.; Gomez-Herrero, R.; Heber, B.; Veronig, A.

    2017-12-01

    The solar energetic particle (SEP) event on 26 Dec 2013 was detected all around the Sun by the two STEREO spacecraft and close-to-Earth observers. While the two STEREOs were separated by 59 degrees and situated at the front side of the associated large coronal event, it was a backside-event for Earth. Nevertheless, significant and long-lasting solar energetic electron anisotropies together with long rise times were observed at all three viewpoints, pointing to an extended electron injection. Although the CME-driven shock appears to account for the SEP event at a first glance a more detailed view reveals a more complex scenario: A CME-CME interaction takes place during the very early phase of the SEP event. Furthermore, four hours after the onset of the event, a second component is measured at all three viewpoints on top of the first SEP increase, mainly consisting of high energy particles. We find that the CME-driven shock alone can hardly account for the observed SEP event in total but a trapping scenario together with ongoing particle acceleration is more likely.

  3. Electron beam injection and associated phenomena as observed in a large space simulation chamber

    International Nuclear Information System (INIS)

    Beghin, C.; Arnal, Y.; Delahaye, J.Y.

    1982-01-01

    This chapter describes an experiment whose main purpose was to perform a simulation under conditions where the ambient neutral and ionized gas, magnetic field strength and lay-out of the different packages were as close as possible to those anticipated for the First Spacelab Flight (FSLP) mission. Phenomena Induced by Charged Particle Beams (PICPAB) are planned to be investigated during the FSLP using a Euopean payload. The PICPAB experiment consists of two accelerators of electron and ion beams and associated diagnostic instruments including wave receivers, thermal plasma probes and return current particle energy-analyzers. The main results of the test with the electron beam are reported. Topics considered include the experimental configuration; a transverse dc electric field in the absence of background plasma; a transverse dc electric field in the background plasma; ambient plasma response; a high-frequency electric field; return current characteristics; and collector vs. plasma behavior. The complexity of the beam-plasma-collector-gun system is shown where nonlinear processes are generated in several consecutive steps. It is concluded that under the peculiar conditions described (with the beam propagation distance shorter than the first node focalization length and nearly zero pitch-angle injection, neutral gas pressure ranging from less to 10 -6 up to 10 -4 torr), the beam plasma discharge was never triggered

  4. Magnetically insulated transmission line used for relativistic electron beam injection into SPAC-VI

    International Nuclear Information System (INIS)

    Tsuzuki, Tetsuya; Narihara, Kazumichi; Tomita, Yukihiro; Mohri, Akihiro.

    1980-10-01

    For the purpose to inject the electron beam with energy of about 1.5 MeV and current of about 100 kA into the SPAC-6 (torus device), a magnetically insulated transmission line was designed and constructed. The motion of electrons in the line was theoretically analyzed. The requirements for the design of the transmission line were as follows-: (a) condition of magnetic insulation, (b) suppression against reverse gas flow from the beam source to the torus, (c) care to minimize the influence of strong torus magnetic field, (d) reduction of inductance and (e) safety engineering measures, e.g., separation valve in the MITL between the beam source and the SPAC-6. The transmission line of 2.4 m long was designed and constructed. The wave forms of electric potential and current were measured. The transmission efficiency of current along the axis and the efficiency as a function of current at the end of the line were also measured. The reason of the loss of current is discussed. (J.P.N.)

  5. Superluminescence from an optically pumped molecular tunneling junction by injection of plasmon induced hot electrons

    Directory of Open Access Journals (Sweden)

    Kai Braun

    2015-05-01

    Full Text Available Here, we demonstrate a bias-driven superluminescent point light-source based on an optically pumped molecular junction (gold substrate/self-assembled molecular monolayer/gold tip of a scanning tunneling microscope, operating at ambient conditions and providing almost three orders of magnitude higher electron-to-photon conversion efficiency than electroluminescence induced by inelastic tunneling without optical pumping. A positive, steadily increasing bias voltage induces a step-like rise of the Stokes shifted optical signal emitted from the junction. This emission is strongly attenuated by reversing the applied bias voltage. At high bias voltage, the emission intensity depends non-linearly on the optical pump power. The enhanced emission can be modelled by rate equations taking into account hole injection from the tip (anode into the highest occupied orbital of the closest substrate-bound molecule (lower level and radiative recombination with an electron from above the Fermi level (upper level, hence feeding photons back by stimulated emission resonant with the gap mode. The system reflects many essential features of a superluminescent light emitting diode.

  6. Properties and parameters of the electron beam injected into the mirror magnetic trap of a plasma accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Andreev, V. V., E-mail: temple18@mail.ru; Novitsky, A. A.; Vinnichenko, L. A.; Umnov, A. M.; Ndong, D. O. [Peoples’ Friendship University of Russia (Russian Federation)

    2016-03-15

    The parameters of the injector of an axial plasma beam injected into a plasma accelerator operating on the basis of gyroresonance acceleration of electrons in the reverse magnetic field are determined. The trapping of the beam electrons into the regime of gyroresonance acceleration is numerically simulated by the particle- in-cell method. The optimal time of axial injection of the beam into a magnetic mirror trap is determined. The beam parameters satisfying the condition of efficient particle trapping into the gyromagnetic autoresonance regime are found.

  7. Lead Halide Perovskites as Charge Generation Layers for Electron Mobility Measurement in Organic Semiconductors.

    Science.gov (United States)

    Love, John A; Feuerstein, Markus; Wolff, Christian M; Facchetti, Antonio; Neher, Dieter

    2017-12-06

    Hybrid lead halide perovskites are introduced as charge generation layers (CGLs) for the accurate determination of electron mobilities in thin organic semiconductors. Such hybrid perovskites have become a widely studied photovoltaic material in their own right, for their high efficiencies, ease of processing from solution, strong absorption, and efficient photogeneration of charge. Time-of-flight (ToF) measurements on bilayer samples consisting of the perovskite CGL and an organic semiconductor layer of different thickness are shown to be determined by the carrier motion through the organic material, consistent with the much higher charge carrier mobility in the perovskite. Together with the efficient photon-to-electron conversion in the perovskite, this high mobility imbalance enables electron-only mobility measurement on relatively thin application-relevant organic films, which would not be possible with traditional ToF measurements. This architecture enables electron-selective mobility measurements in single components as well as bulk-heterojunction films as demonstrated in the prototypical polymer/fullerene blends. To further demonstrate the potential of this approach, electron mobilities were measured as a function of electric field and temperature in an only 127 nm thick layer of a prototypical electron-transporting perylene diimide-based polymer, and found to be consistent with an exponential trap distribution of ca. 60 meV. Our study furthermore highlights the importance of high mobility charge transporting layers when designing perovskite solar cells.

  8. Electron Beam Evaporated TiO2 Layer for High Efficiency Planar Perovskite Solar Cells on Flexible Polyethylene Terephthalate Substrates

    KAUST Repository

    Qiu, Weiming; Paetzold, Ulrich W; Gehlhaar, Robert; Smirnov, Vladimir; Boyen, Hans-Gerd; Tait, Jeffrey Gerhart; Conings, Bert; Zhang, Weimin; Nielsen, Christian; McCulloch, Iain; Froyen, Ludo; Heremans, Paul; Cheyns, David

    2015-01-01

    The TiO2 layer made by electron beam (e-beam) induced evaporation is demonstrated as electron transport layer (ETL) in high efficiency planar junction perovskite solar cells. The temperature of the substrate and the thickness of the TiO2 layer can

  9. Echo 2: a study of electron beams injected into the high-latitude ionosphere from a large sounding rocket

    International Nuclear Information System (INIS)

    Winckler, J.R.; Arnoldy, R.L.; Hendrickson, R.A.

    1975-01-01

    The Black Brant V-C Echo 2 rocket was launched at Fort Churchill on September 25, 1972, and it injected 64-ms pulses of electron beams of 80-mA current and 45-keV voltage into the ionosphere. This paper studies the responses of on-board electrostatic deflection and solid state detectors to injected electrons after motion in the near ionosphere and atmosphere. It is shown that it was only through some form of scattering that the detectors could sense the injected beam electrons. By means of 'phase maps' of injection and detection pitch angles a number of distinct regions are found corresponding to a rocket scattering halo, an atmospheric scattering halo, a region of weak responses, and a source of strong scattering above the rocket. The atmospheric scattering has been compared with the theoretical and experimental results of the Echo 1 experiment, and it is found to be in reasonable agreement. The rocket halo is discussed qualitatively; but no explanation is found for the backscatter from above the rocket, which may be associated with an occasional violent beam instability. This analysis has been carried out to better understand the complexities of electron motion observed near large rockets carrying artifical electron accelerators as a guide in the planning of future experiments

  10. A double-layer based model of ion confinement in electron cyclotron resonance ion source

    Energy Technology Data Exchange (ETDEWEB)

    Mascali, D., E-mail: davidmascali@lns.infn.it; Neri, L.; Celona, L.; Castro, G.; Gammino, S.; Ciavola, G. [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali del Sud, via S. Sofia 62, 95123 Catania (Italy); Torrisi, G. [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali del Sud, via S. Sofia 62, 95123 Catania (Italy); Università Mediterranea di Reggio Calabria, Dipartimento di Ingegneria dell’Informazione, delle Infrastrutture e dell’Energia Sostenibile, Via Graziella, I-89100 Reggio Calabria (Italy); Sorbello, G. [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali del Sud, via S. Sofia 62, 95123 Catania (Italy); Università degli Studi di Catania, Dipartimento di Ingegneria Elettrica Elettronica ed Informatica, Viale Andrea Doria 6, 95125 Catania (Italy)

    2014-02-15

    The paper proposes a new model of ion confinement in ECRIS, which can be easily generalized to any magnetic configuration characterized by closed magnetic surfaces. Traditionally, ion confinement in B-min configurations is ascribed to a negative potential dip due to superhot electrons, adiabatically confined by the magneto-static field. However, kinetic simulations including RF heating affected by cavity modes structures indicate that high energy electrons populate just a thin slab overlapping the ECR layer, while their density drops down of more than one order of magnitude outside. Ions, instead, diffuse across the electron layer due to their high collisionality. This is the proper physical condition to establish a double-layer (DL) configuration which self-consistently originates a potential barrier; this “barrier” confines the ions inside the plasma core surrounded by the ECR surface. The paper will describe a simplified ion confinement model based on plasma density non-homogeneity and DL formation.

  11. Sputter Deposited TiOx Thin-Films as Electron Transport Layers in Organic Solar Cells

    DEFF Research Database (Denmark)

    Mirsafaei, Mina; Bomholt Jensen, Pia; Lakhotiya, Harish

    transparency and favorable energy-level alignment with many commonly used electron-acceptor materials. There are several methods available for fabricating compact TiOx thin-films for use in organic solar cells, including sol-gel solution processing, spray pyrolysis and atomic-layer deposition; however...... of around 7%, by incorporating sputter deposited TiOx thin-films as electron-transport and exciton-blocking layers. In the work, we report on the effect of different TiOx deposition temperatures and thicknesses on the organic-solar-cell device performance. Besides optical characterization, AFM and XRD...... analyses are performed to characterize the morphology and crystal structure of the films, and external quantum efficiency measurements are employed to shed further light on the device performance. Our study presents a novel method for implementation of TiOx thin-films as electron-transport layer in organic...

  12. Energy and angular distribution of electrons after transmission of thick layers

    International Nuclear Information System (INIS)

    Kreyling, H.

    1975-01-01

    In this work, the behaviour of electrons going through material-layers is studied. For a layer-thickness where the theories of multiple-scattering are no longer valid, a Monte-Carlo-method is presented for the calculation of energy distributions as a function of scattering-angle. Plastic-scintillator-material (NE 102 A produced by Nuclear Enterprises Ltd.) was bombarded by electrons with energies between 0.5 and 2.0 MeV and the energy-distributions of the electrons, scatterd in the layer, were measured as a function of the scattering-angle. With the aid of the Monte-Carlo-method developed in this paper, energy distributions were calculated as a function of scattering-angle for the two absorber materials aluminium (single-element material) and NE 102 A (chemical compound of C, N, H, O). (orig./WL) [de

  13. Stability, structural and electronic properties of benzene molecule adsorbed on free standing Au layer

    Energy Technology Data Exchange (ETDEWEB)

    Katoch, Neha, E-mail: nehakatoch2@gmail.com; Kapoor, Pooja; Sharma, Munish; Ahluwalia, P. K. [Physics Department, Himachal Pradesh University, Shimla, Himachal Pradesh, India 171005 (India); Kumar, Ashok [Center for Physical Sciences, School of Basic and Applied Sciences, Central University of Punjab, Bathinda, India, 151001 (India)

    2016-05-23

    We report stability and electronic properties of benzene molecule adsorbed on the Au atomic layer within the framework of density function theory (DFT). Horizontal configuration of benzene on the top site of Au monolayer prefers energetically over other studied configurations. On the adsorption of benzene, the ballistic conductance of Au monolayer is found to decrease from 4G{sub 0} to 2G{sub 0} suggesting its applications for the fabrications of organic sensor devices based on the Au atomic layers.

  14. Top layer's thickness dependence on total electron-yield X-ray standing-wave

    International Nuclear Information System (INIS)

    Ejima, Takeo; Yamazaki, Atsushi; Banse, Takanori; Hatano, Tadashi

    2005-01-01

    A Mo single-layer film with a stepwise thickness distribution was fabricated on the same Mo/Si reflection multilayer film. Total electron-yield X-ray standing-wave (TEY-XSW) spectra of the aperiodic multilayer were measured with reflection spectra. The peak positions of the standing waves in the TEY-XSW spectra changed as the film thickness of the top Mo-layer increased

  15. Effects of multiple intravitreal anti-VEGF injections on retinal nerve fiber layer and intraocular pressure: a comparative clinical study.

    Science.gov (United States)

    Sobacı, Güngör; Güngör, Rıza; Ozge, Gökhan

    2013-01-01

    To determine the effect of multiple injections of ranibizumab or bevacizumab on retinal nerve fiber layer (RNFL) and intraocular pressure (IOP) in patients with age-related macular degeneration (AMD). This retrospective study includes 35 eyes of 35 patients treated with intravitreal bevacizumab (IVB, 1.25mg/0.05mL) and 30 eyes of 30 patients with intravitreal ranibizumab (IVR, 0.5mg/0.05mL) who had Fast RNFL analysis (Stratus™); IOP measurements were taken 30 minutes and 24 hours after each injection. The mean ages were 68.0±7.5 and 69.1±7.7 years in the IVR and IVB groups, respectively (P=0.55). They underwent (6.3±1.9) and (5.1±1.3) injections (P=0.07) over (13.6±2.1) and (14.05±2.6) months (P=0.45) in the IVR and IVB groups, respectively. Changes in overall and temporal RNFL thickness in IVR-treated eyes (105.3±6.9µm and 74.4±11.2µm) were not different from those in untreated eyes in the IVR group (104.6± 8.4µm and 75.1±12.6µm) (P=0.57 and P=0.41, respectively). Similarly, overall and temporal RNFL thickness in IVB-treated eyes (105.8±8.1µm and 74.5±11.8µm) were not different from those in untreated eyes in the IVB group (104.6±8µm and 74.8±12.9µm) (P=0.42 and P=0.80, respectively). The frequencies of IOP rise (P=0.60) and changes in RNFL thickness from baseline (P=0.16) were comparable between groups. Repeated intravitreal injection of ranibizumab or bevacizumab does not seem have adverse effects on RNFL thickness or IOP in wet AMD patients.

  16. Diverse and tunable electronic structures of single-layer metal phosphorus trichalcogenides for photocatalytic water splitting

    International Nuclear Information System (INIS)

    Liu, Jian; Li, Xi-Bo; Wang, Da; Liu, Li-Min; Lau, Woon-Ming; Peng, Ping

    2014-01-01

    The family of bulk metal phosphorus trichalcogenides (APX 3 , A = M II , M 0.5 I M 0.5 III ; X = S, Se; M I , M II , and M III represent Group-I, Group-II, and Group-III metals, respectively) has attracted great attentions because such materials not only own magnetic and ferroelectric properties, but also exhibit excellent properties in hydrogen storage and lithium battery because of the layered structures. Many layered materials have been exfoliated into two-dimensional (2D) materials, and they show distinct electronic properties compared with their bulks. Here we present a systematical study of single-layer metal phosphorus trichalcogenides by density functional theory calculations. The results show that the single layer metal phosphorus trichalcogenides have very low formation energies, which indicates that the exfoliation of single layer APX 3 should not be difficult. The family of single layer metal phosphorus trichalcogenides exhibits a large range of band gaps from 1.77 to 3.94 eV, and the electronic structures are greatly affected by the metal or the chalcogenide atoms. The calculated band edges of metal phosphorus trichalcogenides further reveal that single-layer ZnPSe 3 , CdPSe 3 , Ag 0.5 Sc 0.5 PSe 3 , and Ag 0.5 In 0.5 PX 3 (X = S and Se) have both suitable band gaps for visible-light driving and sufficient over-potentials for water splitting. More fascinatingly, single-layer Ag 0.5 Sc 0.5 PSe 3 is a direct band gap semiconductor, and the calculated optical absorption further convinces that such materials own outstanding properties for light absorption. Such results demonstrate that the single layer metal phosphorus trichalcogenides own high stability, versatile electronic properties, and high optical absorption, thus such materials have great chances to be high efficient photocatalysts for water-splitting

  17. Steady flow in a porous layer subjected to a stream uniformly injecting from a plane; Ichiyo ni men kara fukidasu nagare ni sarasareta takoshitsu sonai no teijo nagare

    Energy Technology Data Exchange (ETDEWEB)

    Hasegawa, E; Horiguchi, Y; Kitazawa, K [Keio University, Tokyo (Japan). Faculty of Science and Technology

    1997-08-25

    A steady flow in an non-deformable porous layer subjected to a fluid stream is studied analytically and numerically. One side of the layer of sponge is bounded by a solid wall and the other by a layer of fluid. The fluid is injected uniformly from a plane, through which the fluid can pass, set up parallel to the sponge layer. The flow in the sponge layer is assumed to be governed by Darcy`s law. The problem considered is solved in terms of a similarity solution. The equations governing the fluid flows in both the porous layer and the fluid layer are reduced to a system of the ordinary differential equations. These equations are solved analytically for three cases ideal fluid flow, low Reynolds number flow and high Reynolds number flow. On the other hand, these equations are solved numerically for the general case by using the finite difference method. The distributions of the velocity and the pressure in both layers are found for various parameters. In particular, the speed which the fluid intrudes into the sponge layer due to the injection of the stream from the plane is found to be a function of dimensionless parameters. To find this speed is essential to the understanding of porous material. 15 refs., 9 figs.

  18. Ion-acoustic double-layers in a magnetized plasma with nonthermal electrons

    Energy Technology Data Exchange (ETDEWEB)

    Rios, L. A. [Centro Brasileiro de Pesquisas Físicas and Instituto Nacional de Ciência e Tecnologia de Sistemas Complexos, Rua Xavier Sigaud 150, 22290-180 Rio de Janeiro (Brazil); Galvão, R. M. O. [Centro Brasileiro de Pesquisas Físicas and Instituto Nacional de Ciência e Tecnologia de Sistemas Complexos, Rua Xavier Sigaud 150, 22290-180 Rio de Janeiro (Brazil); Instituto de Física, Universidade de São Paulo, 05508-900 São Paulo (Brazil)

    2013-11-15

    In the present work we investigate the existence of obliquely propagating ion-acoustic double layers in magnetized two-electron plasmas. The fluid model is used to describe the ion dynamics, and the hot electron population is modeled via a κ distribution function, which has been proved to be appropriate for modeling non-Maxwellian plasmas. A quasineutral condition is assumed to investigate these nonlinear structures, which leads to the formation of double-layers propagating with slow ion-acoustic velocity. The problem is investigated numerically, and the influence of parameters such as nonthermality is discussed.

  19. Electronic structure and the properties of phosphorene and few-layer black phosphorus

    International Nuclear Information System (INIS)

    Fukuoka, Shuhei; Taen, Toshihiro; Osada, Toshihito

    2015-01-01

    A single atomic layer of black phosphorus, phosphorene, was experimentally realized in 2014. It has a puckered honeycomb lattice structure and a semiconducting electronic structure. In the first part of this paper, we use a simple LCAO model, and qualitatively discuss the electronic structure of phosphorene systems under electric and magnetic fields, especially noting their midgap edge states. The next part is devoted to the review of the progress in research on phosphorene over the past one year since its realization in 2014. Phosphorene has been a typical material to study the semiconductor physics in atomic layers. (author)

  20. Growth of ZnO layers for transparent and flexible electronics

    International Nuclear Information System (INIS)

    Mofor, A.C.; Bakin, A.S.; Postels, B.; Suleiman, M.; Elshaer, A.; Waag, A.

    2008-01-01

    We have deposited and characterised ZnO on flexible and transparent plastic polymer. We employed a specially designed vapour phase growth system with elemental sources for zinc and oxygen and deposited thin ZnO films at temperatures below 400 deg. C. Basic photoluminescence characterisation confirms ZnO. Ohmic contacts were fabricated on these layers and the layers exhibit significantly high electron concentration with carrier mobility μ of up to 10.78 cm 2 V -1 s -1 . Furthermore, we show how these layers can be processed with conventional device processing techniques

  1. Growth of ZnO layers for transparent and flexible electronics

    Energy Technology Data Exchange (ETDEWEB)

    Mofor, A.C.; Bakin, A.S.; Postels, B.; Suleiman, M.; Elshaer, A.; Waag, A. [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Str. 66, D-38106 Braunschweig (Germany)

    2008-02-15

    We have deposited and characterised ZnO on flexible and transparent plastic polymer. We employed a specially designed vapour phase growth system with elemental sources for zinc and oxygen and deposited thin ZnO films at temperatures below 400 deg. C. Basic photoluminescence characterisation confirms ZnO. Ohmic contacts were fabricated on these layers and the layers exhibit significantly high electron concentration with carrier mobility {mu} of up to 10.78 cm{sup 2} V{sup -1} s{sup -1}. Furthermore, we show how these layers can be processed with conventional device processing techniques.

  2. Plasma dynamics near an earth satellite and neutralization of its electric charge during electron beam injection into the ionosphere

    International Nuclear Information System (INIS)

    Fedorov, V.A.

    2000-01-01

    A study is made of the dynamics of the ionospheric plasma in the vicinity of an earth satellite injecting an electron beam. The time evolution of the electric charge of the satellite is determined. The electric potential of the satellite is found to be well below the beam-cutoff potential. It is shown that, under conditions typical of active experiments in space, the plasma electrons are capable of neutralizing the satellite's charge

  3. Polymer Solar Cells with Efficiency >10% Enabled via a Facile Solution-Processed Al-Doped ZnO Electron Transporting Layer

    KAUST Repository

    Jagadamma, Lethy Krishnan

    2015-04-22

    A facile and low-temperature (125 °C) solution-processed Al-doped ZnO (AZO) buffer layer functioning very effectively as electron accepting/hole blocking layer for a wide range of polymer:fullerene bulk heterojunction systems, yielding power conversion efficiency in excess of 10% (8%) on glass (plastic) substrates is described. The ammonia-treatment of the aqueous AZO nanoparticle solution produces compact, crystalline, and smooth thin films, which retain the aluminum doping, and eliminates/reduces the native defects by nitrogen incorporation, making them good electron transporters and energetically matched with the fullerene acceptor. It is demonstrated that highly efficient solar cells can be achieved without the need for additional surface chemical modifications of the buffer layer, which is a common requirement for many metal oxide buffer layers to yield efficient solar cells. Also highly efficient solar cells are achieved with thick AZO films (>50 nm), highlighting the suitability of this material for roll-to-roll coating. Preliminary results on the applicability of AZO as electron injection layer in F8BT-based polymer light emitting diode are also presented. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Low Energy Scanned Electron-Beam Dose Distribution in Thin Layers

    DEFF Research Database (Denmark)

    McLaughlin, W. L.; Hjortenberg, P. E.; Pedersen, Walther Batsberg

    1975-01-01

    Thin radiochromic dye film dosimeters, calibrated by means of calorimetry, make possible the determination of absorbed-dose distributions due to low-energy scanned electron beam penetrations in moderately thin coatings and laminar media. For electrons of a few hundred keV, calibrated dosimeters...... of about 30–60 μm thickness may be used in stacks or interleaved between layers of materials of interest and supply a sufficient number of experimental data points throughout the depth of penetration of electrons to provide a depth-dose curve. Depth doses may be resolved in various polymer layers...... on different backings (wood, aluminum, and iron) for scanned electron beams (Emax = 400 keV) having a broad energy spectrum and diffuse incidence, such as those used in radiation curing of coatings, textiles, plastics, etc. Theoretical calculations of such distributions of energy depositions are relatively...

  5. The thermodynamic spin magnetization of strongly correlated 2d electrons in a silicon inversion layer

    OpenAIRE

    Prus, O.; Yaish, Y.; Reznikov, M.; Sivan, U.; Pudalov, V.

    2002-01-01

    A novel method invented to measure the minute thermodynamic spin magnetization of dilute two dimensional fermions is applied to electrons in a silicon inversion layer. Interplay between the ferromagnetic interaction and disorder enhances the low temperature susceptibility up to 7.5 folds compared with the Pauli susceptibility of non-interacting electrons. The magnetization peaks in the vicinity of the density where transition to strong localization takes place. At the same density, the suscep...

  6. MTBE and priority contaminant treatment with high energy electron beam injection

    Energy Technology Data Exchange (ETDEWEB)

    Cooper, William J; Nickelsen, Michael G; Mezyk, Stephen P; Leslie, Greg; Tornatore, Paul M; Hardison, Wayne; Hajali, Paris A

    2002-11-01

    A study was conducted to examine the removal of methyl tert-butyl ether (MTBE) and 15 other organic compounds, as well as perchlorate ion, in waters of different quality. The 15 organic compounds consisted of halogenated solvents (chlorination), disinfection by-products, pesticides, and nitrosodimethylamine (NDMA). These studies were conducted using a pilot scale 20 kW mobile electron beam system at Water Factory 21, Orange County, CA where wastewater is treated and re-injected into the ground as a barrier to salt water intrusion. Future applications for this treated water include water reuse. Ground water and treated wastewater, after having gone through a reverse osmosis-polishing step (RO permeate), were used to prepare mixtures of the compounds. Using fundamental radiation chemistry, it was possible to examine the factors effecting removal efficiency of all the compounds as well as MTBE destruction and reaction by-product formation and removal. All of the organic compounds were destroyed in the studies and we also observed the destruction of perchlorate ion in one of the waters.

  7. MTBE and priority contaminant treatment with high energy electron beam injection

    International Nuclear Information System (INIS)

    Cooper, William J.; Nickelsen, Michael G.; Mezyk, Stephen P.; Leslie, Greg; Tornatore, Paul M.; Hardison, Wayne; Hajali, Paris A.

    2002-01-01

    A study was conducted to examine the removal of methyl tert-butyl ether (MTBE) and 15 other organic compounds, as well as perchlorate ion, in waters of different quality. The 15 organic compounds consisted of halogenated solvents (chlorination), disinfection by-products, pesticides, and nitrosodimethylamine (NDMA). These studies were conducted using a pilot scale 20 kW mobile electron beam system at Water Factory 21, Orange County, CA where wastewater is treated and re-injected into the ground as a barrier to salt water intrusion. Future applications for this treated water include water reuse. Ground water and treated wastewater, after having gone through a reverse osmosis-polishing step (RO permeate), were used to prepare mixtures of the compounds. Using fundamental radiation chemistry, it was possible to examine the factors effecting removal efficiency of all the compounds as well as MTBE destruction and reaction by-product formation and removal. All of the organic compounds were destroyed in the studies and we also observed the destruction of perchlorate ion in one of the waters

  8. Wide-gap layered oxychalcogenide semiconductors: Materials, electronic structures and optoelectronic properties

    International Nuclear Information System (INIS)

    Ueda, Kazushige; Hiramatsu, Hidenori; Hirano, Masahiro; Kamiya, Toshio; Hosono, Hideo

    2006-01-01

    Applying the concept of materials design for transparent conductive oxides to layered oxychalcogenides, several p-type and n-type layered oxychalcogenides were proposed as wide-gap semiconductors and their basic optical and electrical properties were examined. The layered oxychalcogenides are composed of ionic oxide layers and covalent chalcogenide layers, which bring wide-gap and conductive properties to these materials, respectively. The electronic structures of the materials were examined by normal/inverse photoemission spectroscopy and energy band calculations. The results of the examinations suggested that these materials possess unique features more than simple wide-gap semiconductors. Namely, the layered oxychalcogenides are considered to be extremely thin quantum wells composed of the oxide and chalcogenide layers or 2D chalcogenide crystals/molecules embedded in an oxide matrix. Observation of step-like absorption edges, large band gap energy and large exciton binding energy demonstrated these features originating from 2D density of states and quantum size effects in these layered materials

  9. Injection of electrons with predominantly perpendicular energy into an area of toroidal field ripple in a tokamak plasma to improve plasma confinement

    Science.gov (United States)

    Ono, Masayuki; Furth, Harold

    1993-01-01

    An electron injection scheme for controlling transport in a tokamak plasma. Electrons with predominantly perpendicular energy are injected into a ripple field region created by a group of localized poloidal field bending magnets. The trapped electrons then grad-B drift vertically toward the plasma interior until they are detrapped, charging the plasma negative. Calculations indicate that the highly perpendicular velocity electrons can remain stable against kinetic instabilities in the regime of interest for tokamak experiments. The penetration distance can be controlled by controlling the "ripple mirror ratio", the energy of the injected electrons, and their v.sub..perp. /v.sub.51 ratio. In this scheme, the poloidal torque due to the injected radial current is taken by the magnets and not by the plasma. Injection is accomplished by the flat cathode containing an ECH cavity to pump electrons to high v.sub..perp..

  10. A bremsstrahlung gamma-ray source based on stable ionization injection of electrons into a laser wakefield accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Döpp, A., E-mail: andreas.doepp@polytechnique.edu [LOA, ENSTA ParisTech, CNRS, École polytechnique, Université Paris-Saclay, 828 bd des Maréchaux, 91762 Palaiseau Cedex (France); Centro de Laseres Pulsados, Parque Cientfico, 37185 Villamayor, Salamanca (Spain); Guillaume, E.; Thaury, C.; Lifschitz, A. [LOA, ENSTA ParisTech, CNRS, École polytechnique, Université Paris-Saclay, 828 bd des Maréchaux, 91762 Palaiseau Cedex (France); Sylla, F. [SourceLAB SAS, 86 rue de Paris, 91400 Orsay (France); Goddet, J-P.; Tafzi, A.; Iaquanello, G.; Lefrou, T.; Rousseau, P. [LOA, ENSTA ParisTech, CNRS, École polytechnique, Université Paris-Saclay, 828 bd des Maréchaux, 91762 Palaiseau Cedex (France); Conejero, E.; Ruiz, C. [Departamento de Física Aplicada, Universidad de Salamanca, Plaza de laMerced s/n, 37008 Salamanca (Spain); Ta Phuoc, K.; Malka, V. [LOA, ENSTA ParisTech, CNRS, École polytechnique, Université Paris-Saclay, 828 bd des Maréchaux, 91762 Palaiseau Cedex (France)

    2016-09-11

    Laser wakefield acceleration permits the generation of ultra-short, high-brightness relativistic electron beams on a millimeter scale. While those features are of interest for many applications, the source remains constraint by the poor stability of the electron injection process. Here we present results on injection and acceleration of electrons in pure nitrogen and argon. We observe stable, continuous ionization-induced injection of electrons into the wakefield for laser powers exceeding a threshold of 7 TW. The beam charge scales approximately with the laser energy and is limited by beam loading. For 40 TW laser pulses we measure a maximum charge of almost 1 nC per shot, originating mostly from electrons of less than 10 MeV energy. The relatively low energy, the high charge and its stability make this source well-suited for applications such as non-destructive testing. Hence, we demonstrate the production of energetic radiation via bremsstrahlung conversion at 1 Hz repetition rate. In accordance with GEANT4 Monte-Carlo simulations, we measure a γ-ray source size of less than 100 μm for a 0.5 mm tantalum converter placed at 2 mm from the accelerator exit. Furthermore we present radiographs of image quality indicators.

  11. Effect of low dose electron beam irradiation on the alteration layer formed during nuclear glass leaching

    Energy Technology Data Exchange (ETDEWEB)

    Mougnaud, S., E-mail: sarah.mougnaud@gmail.com [CEA Marcoule, DEN, DTCD, SECM, BP 17171, 30207 Bagnols-sur-Cèze cedex (France); Tribet, M. [CEA Marcoule, DEN, DTCD, SECM, BP 17171, 30207 Bagnols-sur-Cèze cedex (France); Renault, J.-P. [NIMBE, CNRS, CEA, Université Paris Saclay, CEA Saclay, 91191 Gif-sur-Yvette cedex (France); Jollivet, P. [CEA Marcoule, DEN, DTCD, SECM, BP 17171, 30207 Bagnols-sur-Cèze cedex (France); Panczer, G. [Institut Lumière Matière, UMR 5306, Université Lyon 1-CNRS, Université de Lyon, 69622 Villeurbanne cedex (France); Charpentier, T. [NIMBE, CNRS, CEA, Université Paris Saclay, CEA Saclay, 91191 Gif-sur-Yvette cedex (France); Jégou, C. [CEA Marcoule, DEN, DTCD, SECM, BP 17171, 30207 Bagnols-sur-Cèze cedex (France)

    2016-12-15

    This investigation concerns borosilicate glass leaching mechanisms and the evolution of alteration layer under electron beam irradiation. A simple glass doped with rare earth elements was selected in order to access mechanistic and structural information and better evaluate the effects of irradiation. It was fully leached in initially pure water at 90 °C and at high glass surface area to solution volume ratio (S/V = 20 000 m{sup −1}) in static conditions. Under these conditions, the system quickly reaches the residual alteration rate regime. A small particle size fraction (2–5 μm) was sampled in order to obtain a fairly homogeneous altered material enabling the use of bulk characterization methods. External irradiations with 10 MeV electrons up to a dose of 10 MGy were performed either before or after leaching, to investigate respectively the effect of initial glass irradiation on its alteration behavior and the irradiation stability of the alteration layer. Glass dissolution rate was analyzed by regular leachate samplings and the alteration layer structure was characterized by Raman, luminescence (continuous or time-resolved), and {sup 29}Si MAS NMR and EPR spectroscopy. It was shown that the small initial glass evolutions under irradiation did not induce any modification of the leaching kinetic nor of the structure of the alteration layer. The alteration process seemed to “smooth over” the created defects. Otherwise, the alteration layer and initial glass appeared to have different behaviors under irradiation. No Eu{sup 3+} reduction was detected in the alteration layer after irradiation and the defect creation efficiency was much lower than for initial glass. This can possibly be explained by the protective role of pore water contained in the altered material (∼20%). Moreover, a slight depolymerization of the silicon network of the altered glass under irradiation with electrons was evidenced, whereas in the initial glass it typically

  12. Stable, tunable, quasimonoenergetic electron beams produced in a laser wakefield near the threshold for self-injection

    Directory of Open Access Journals (Sweden)

    S. Banerjee

    2013-03-01

    Full Text Available Stable operation of a laser-plasma accelerator near the threshold for electron self-injection in the blowout regime has been demonstrated with 25–60 TW, 30 fs laser pulses focused into a 3–4 millimeter length gas jet. Nearly Gaussian shape and high nanosecond contrast of the focused pulse appear to be critically important for controllable, tunable generation of 250–430 MeV electron bunches with a low-energy spread, ∼10  pC charge, a few-mrad divergence and pointing stability, and a vanishingly small low-energy background. The physical nature of the near-threshold behavior is examined using three-dimensional particle-in-cell simulations. Simulations indicate that properly locating the nonlinear focus of the laser pulse within the plasma suppresses continuous injection, thus reducing the low-energy tail of the electron beam.

  13. A novel injectable thermoresponsive and cytocompatible gel of poly(N-isopropylacrylamide) with layered double hydroxides facilitates siRNA delivery into chondrocytes in 3D culture

    NARCIS (Netherlands)

    Yang, H.Y.; Ee, R.J. van; Timmer, K.; Craenmehr, E.G.M.; Huang, J.H.; Öner, C.; Dhert, W.J.A.; Kragten, A.H.M.; Willems, N.; Grinwis, G.C.M.; Tryfonidou, M.A.; Papen-Botterhuis, N.E.; Creemers, L.B.

    2015-01-01

    Hybrid hydrogels composed of poly(N-isopropylacrylamide) (pNIPAAM) and layered double hydroxides (LDHs) are presented in this study as novel injectable and thermoresponsive materials for siRNA delivery, which could specifically target several negative regulators of tissue homeostasis in

  14. A novel injectable thermoresponsive and cytocompatible gel of poly(N-isopropylacrylamide) with layered double hydroxides facilitates siRNA delivery into chondrocytes in 3D culture

    NARCIS (Netherlands)

    Yang, Hsiao-yin; van Ee, Renz J; Timmer, Klaas; Craenmehr, Eric G M; Huang, Julie H; Oner, F. Cumhur; Dhert, Wouter J A; Kragten, Angela H M; Willems, Nicole; Grinwis, Guy C M; Tryfonidou, Marianna A; Papen-Botterhuis, Nicole E; Creemers, Laura B

    Hybrid hydrogels composed of poly(N-isopropylacrylamide) (pNIPAAM) and layered double hydroxides (LDHs) are presented in this study as novel injectable and thermoresponsive materials for siRNA delivery, which could specifically target several negative regulators of tissue homeostasis in

  15. Simulation of electronic circuit sensitivity towards humidity using electrochemical data on water layer

    DEFF Research Database (Denmark)

    Joshy, Salil; Verdingovas, Vadimas; Jellesen, Morten Stendahl

    2015-01-01

    Climatic conditions like temperature and humidity have direct influence on the operation of electronic circuits. The effects of temperature on the operation of electronic circuits have been widely investigated, while the effect of humidity and solder flux residues are not well understood including...... the effect on circuit and PCBA (printed circuit board assembly) layout design. This paper elucidates a methodology for analyzing the sensitivity of an electronic circuit based on parasitic circuit analysis using data on electrical property of the water layer formed under humid as well as contaminated...

  16. Fabrication of carbon layer coated FE-nanoparticles using an electron beam irradiation

    Science.gov (United States)

    Kim, Hyun Bin; Jeun, Joon Pyo; Kang, Phil Hyun; Oh, Seung-Hwan

    2016-01-01

    A novel synthesis of carbon encapsulated Fe nanoparticles was developed in this study. Fe chloride (III) and polyacrylonitrile (PAN) were used as precursors. The crosslinking of PAN molecules and the nucleation of Fe nanoparticles were controlled by the electron beam irradiation dose. Stabilization and carbonization processes were carried out using a vacuum furnace at 275 °C and 1000 °C, respectively. Micro structures were evaluated by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Fe nanoparticles were formed with diameters of 100 nm, and the Fe nanoparticles were encapsulated by carbon layers. As the electron beam irradiation dose increased, it was observed that the particle sizes decreased.

  17. Silicotungstate, a Potential Electron Transporting Layer for Low-Temperature Perovskite Solar Cells.

    Science.gov (United States)

    Choi, Yoon Ho; Kim, Hyun Bin; Yang, In Seok; Sung, Sang Do; Choi, Young Sik; Kim, Jeongho; Lee, Wan In

    2017-08-02

    Thin films of a heteropolytungstate, lithium silicotungstate (Li 4 SiW 12 O 40 , termed Li-ST), prepared by a solution process at low temperature, were successfully applied as electron transporting layer (ETL) of planar-type perovskite solar cells (PSCs). Dense and uniform Li-ST films were prepared on FTO glass by depositing a thin Li-ST buffer layer, followed by coating of a main Li-ST layer. The film thickness was controlled by varying the number of coating cycles, consisting of spin-coating and thermal treatment at 150 °C. In particular, by employing 60 nm-thick Li-ST layer obtained by two cycles of coating, the fabricated CH 3 NH 3 PbI 3 PSC device demonstrates the photovoltaic conversion efficiency (PCE) of 14.26% with J SC of 22.16 mA cm -2 , V OC of 0.993 mV and FF of 64.81%. The obtained PCE is significantly higher than that of the PSC employing a TiO 2 layer processed at the same temperature (PCE = 12.27%). Spectroscopic analyses by time-resolved photoluminescence and pulsed light-induced transient measurement of photocurrent indicate that the Li-ST layer collects electrons from CH 3 NH 3 PbI 3 more efficiently and also exhibits longer electron lifetime than the TiO 2 layer thermally treated at 150 °C. Thus, Li-ST is considered to be a promising ETL material that can be applied for the fabrication of flexible PSC devices.

  18. AA stacking, tribological and electronic properties of double-layer graphene with krypton spacer.

    Science.gov (United States)

    Popov, Andrey M; Lebedeva, Irina V; Knizhnik, Andrey A; Lozovik, Yurii E; Potapkin, Boris V; Poklonski, Nikolai A; Siahlo, Andrei I; Vyrko, Sergey A

    2013-10-21

    Structural, energetic, and tribological characteristics of double-layer graphene with commensurate and incommensurate krypton spacers of nearly monolayer coverage are studied within the van der Waals-corrected density functional theory. It is shown that when the spacer is in the commensurate phase, the graphene layers have the AA stacking. For this phase, the barriers to relative in-plane translational and rotational motion and the shear mode frequency of the graphene layers are calculated. For the incommensurate phase, both of the barriers are found to be negligibly small. A considerable change of tunneling conductance between the graphene layers separated by the commensurate krypton spacer at their relative subangstrom displacement is revealed by the use of the Bardeen method. The possibility of nanoelectromechanical systems based on the studied tribological and electronic properties of the considered heterostructures is discussed.

  19. Intrinsic electron traps in atomic-layer deposited HfO{sub 2} insulators

    Energy Technology Data Exchange (ETDEWEB)

    Cerbu, F.; Madia, O.; Afanas' ev, V. V.; Houssa, M.; Stesmans, A. [Laboratory of Semiconductor Physics, Department of Physics and Astronomy, University of Leuven, 3001 Leuven (Belgium); Andreev, D. V. [Laboratory of Semiconductor Physics, Department of Physics and Astronomy, University of Leuven, 3001 Leuven (Belgium); Bauman Moscow State Technical University—Kaluga Branch, 248000 Kaluga, Moscow obl. (Russian Federation); Fadida, S.; Eizenberg, M. [Department of Materials Science and Engineering, Technion-Israel Institute of Technology, 32000 Haifa (Israel); Breuil, L. [imec, 3001 Leuven (Belgium); Lisoni, J. G. [imec, 3001 Leuven (Belgium); Institute of Physics and Mathematics, Faculty of Science, Universidad Austral de Chile, Valdivia (Chile); Kittl, J. A. [Laboratory of Semiconductor Physics, Department of Physics and Astronomy, University of Leuven, 3001 Leuven (Belgium); Advanced Logic Lab, Samsung Semiconductor, Inc., Austin, 78754 Texas (United States); Strand, J.; Shluger, A. L. [Department of Physics and Astronomy, University College London, London WC1E 6BT (United Kingdom)

    2016-05-30

    Analysis of photodepopulation of electron traps in HfO{sub 2} films grown by atomic layer deposition is shown to provide the trap energy distribution across the entire oxide bandgap. The presence is revealed of two kinds of deep electron traps energetically distributed at around E{sub t} ≈ 2.0 eV and E{sub t} ≈ 3.0 eV below the oxide conduction band. Comparison of the trapped electron energy distributions in HfO{sub 2} layers prepared using different precursors or subjected to thermal treatment suggests that these centers are intrinsic in origin. However, the common assumption that these would implicate O vacancies cannot explain the charging behavior of HfO{sub 2}, suggesting that alternative defect models should be considered.

  20. Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics

    Science.gov (United States)

    Cheng, Rui; Jiang, Shan; Chen, Yu; Liu, Yuan; Weiss, Nathan; Cheng, Hung-Chieh; Wu, Hao; Huang, Yu; Duan, Xiangfeng

    2014-01-01

    Two-dimensional layered materials, such as molybdenum disulfide, are emerging as an exciting material system for future electronics due to their unique electronic properties and atomically thin geometry. Here we report a systematic investigation of MoS2 transistors with optimized contact and device geometry, to achieve self-aligned devices with performance including an intrinsic gain over 30, an intrinsic cut-off frequency fT up to 42 GHz and a maximum oscillation frequency fMAX up to 50 GHz, exceeding the reported values for MoS2 transistors to date (fT ~ 0.9 GHz, fMAX ~ 1 GHz). Our results show that logic inverters or radio frequency amplifiers can be formed by integrating multiple MoS2 transistors on quartz or flexible substrates with voltage gain in the gigahertz regime. This study demonstrates the potential of two-dimensional layered semiconductors for high-speed flexible electronics. PMID:25295573

  1. Scanning electron microscopy characterisation of carbon deposited layers in Tore Supra

    International Nuclear Information System (INIS)

    Delchambre, E.; Brosset, C.; Reichle, R.; Devynck, P.; Guirlet, R.; Tsitrone, E.; Saikali, W.; Dominici, C.; Charai, A.

    2003-01-01

    For long discharges in Tore-Supra, an infra-red safety system has been installed to survey surface temperature of the target plates located below the toroidal pump limiter. A shift in temperature is attributed to the growth of a carbon layer at the surface of the neutralizer and has been estimated to a temperature increase of 400 Celsius degrees between virgin and layered surfaces. For temperature safety analysis, target plates have been cleaned and carbon layers were sampled for scanning electronic microscopy (SEM) study. SEM micrographs have allowed to measure the deposited layer thickness and to study the specific fractal and stratified structure. Energy dispersive X-ray spectroscopy analysis has permitted to distinguish carbon layers corresponding to boronization and then to deduce an average growth rate of about 20 nm/s. The growth rate is not constant and is likely to depend on plasma operation parameters. These analyses completed by time of flight secondary ions mass spectrometry (ToF-SIMS) have shown a beneficial effect of the boronization on metallic contamination of the plasma, confirming the in situ optical spectroscopic measurements. These analyses have also shown an increase of hydrogen storage in carbon layer due to boronization. Although the measurements performed on deposited layer are very local, the results reflect the history of the 2002 campaign. (A.C.)

  2. Effect of additive gases and injection methods on chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F2 remote plasmas

    International Nuclear Information System (INIS)

    Yun, Y. B.; Park, S. M.; Kim, D. J.; Lee, N.-E.; Kim, K. S.; Bae, G. H.

    2007-01-01

    The authors investigated the effects of various additive gases and different injection methods on the chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F 2 remote plasmas. N 2 and N 2 +O 2 gases in the F 2 /Ar/N 2 and F 2 /Ar/N 2 /O 2 remote plasmas effectively increased the etch rate of the layers. The addition of direct-injected NO gas increased the etch rates most significantly. NO radicals generated by the addition of N 2 and N 2 +O 2 or direct-injected NO molecules contributed to the effective removal of nitrogen and oxygen in the silicon nitride and oxide layers, by forming N 2 O and NO 2 by-products, respectively, and thereby enhancing SiF 4 formation. As a result of the effective removal of the oxygen, nitrogen, and silicon atoms in the layers, the chemical dry etch rates were enhanced significantly. The process regime for the etch rate enhancement of the layers was extended at elevated temperature

  3. Optical detection of ballistic electrons injected by a scanning-tunneling microscope

    NARCIS (Netherlands)

    Kemerink, M.; Sauthoff, K.; Koenraad, P.M.; Gerritsen, J.W.; Kempen, van H.; Wolter, J.H.

    2001-01-01

    We demonstrate a spectroscopic technique which is based on ballistic injection of minority carriers from the tip of a scanning-tunneling microscope into a semiconductor heterostructure. By analyzing the resulting electroluminescence spectrum as a function of tip-sample bias, both the injection

  4. Injection Methods and Instrumentation for Serial X-ray Free Electron Laser Experiments

    Science.gov (United States)

    James, Daniel

    Scientists have used X-rays to study biological molecules for nearly a century. Now with the X-ray free electron laser (XFEL), new methods have been developed to advance structural biology. These new methods include serial femtosecond crystallography, single particle imaging, solution scattering, and time resolved techniques. The XFEL is characterized by high intensity pulses, which are only about 50 femtoseconds in duration. The intensity allows for scattering from microscopic particles, while the short pulses offer a way to outrun radiation damage. XFELs are powerful enough to obliterate most samples in a single pulse. While this allows for a "diffract and destroy" methodology, it also requires instrumentation that can position microscopic particles into the X-ray beam (which may also be microscopic), continuously renew the sample after each pulse, and maintain sample viability during data collection. Typically these experiments have used liquid microjets to continuously renew sample. The high flow rate associated with liquid microjets requires large amounts of sample, most of which runs to waste between pulses. An injector designed to stream a viscous gel-like material called lipidic cubic phase (LCP) was developed to address this problem. LCP, commonly used as a growth medium for membrane protein crystals, lends itself to low flow rate jetting and so reduces the amount of sample wasted significantly. This work discusses sample delivery and injection for XFEL experiments. It reviews the liquid microjet method extensively, and presents the LCP injector as a novel device for serial crystallography, including detailed protocols for the LCP injector and anti-settler operation.

  5. Pain Elimination during Injection with Newer Electronic Devices: A Comparative Evaluation in Children.

    Science.gov (United States)

    Bansal, Neha; Saha, Sonali; Jaiswal, Jn; Samadi, Firoza

    2014-05-01

    The present study was taken up to clinically evaluate and compare effectiveness of transcutaneous electrical nerve stimulator (TENS) and comfort control syringe (CCS) in various pediatric dental procedures as an alternative to the conventional method of local anesthesia (LA) administration. Ninety healthy children having at least one deciduous molar tooth indicated for extraction in either maxillary right or left quadrant in age group of 6 to 10 years were randomly divided into three equal groups having 30 subjects each. Group I: LA administration using conventional syringe, group II: LA administration using TENS along with the conventional syringe, group III: LA administration using CCS. After LA by the three techniques, pain, anxiety and heart rate were measured. The observations, thus, obtained were subjected to statistical analysis using analysis of variance (ANOVA), student t-test and paired t-test. The mean pain score was maximum in group I followed by group II, while group III revealed the minimum pain, where LA was administered using CCS. Mean anxiety score was maximum in group I followed by group II, while group III revealed the minimum score. Mean heart rate was maximum in group I followed in descending order by groups II and III. The study supports the belief that CCS could be a viable alternative in comparison to the other two methods of LA delivery in children. How to cite this article: Bansal N, Saha S, Jaiswal JN, Samadi F. Pain Elimination during Injection with Newer Electronic Devices: A Comparative Evaluation in Children. Int J Clin Pediatr Dent 2014;7(2):71-76.

  6. Observation of electron biteout regions below sporadic E layers at polar latitudes

    Directory of Open Access Journals (Sweden)

    G. A. Lehmacher

    2015-03-01

    Full Text Available The descent of a narrow sporadic E layer near 95 km altitude over Poker Flat Research Range in Alaska was observed with electron probes on two consecutive sounding rockets and with incoherent scatter radar during a 2 h period near magnetic midnight. A series of four trimethyl aluminum chemical releases demonstrated that the Es layer remained just slightly above the zonal wind node, which was slowly descending due to propagating long-period gravity waves. The location of the layer is consistent with the equilibrium position due to combined action of the wind shear and electric fields. Although the horizontal electric field could not be measured directly, we estimate that it was ~ 2 mV m−1 southward, consistent with modeling the vertical ion drift, and compatible with extremely quiet conditions. Both electron probes observed deep biteout regions just below the Es enhancements, which also descended with the sporadic layers. We discuss several possibilities for the cause of these depletions; one possibility is the presence of negatively charged, nanometer-sized mesospheric smoke particles. Such particles have recently been detected in the upper mesosphere, but not yet in immediate connection with sporadic E. Our observations of electron depletions suggest a new process associated with sporadic E.

  7. ZnO nanostructures as electron extraction layers for hybrid perovskite thin films

    Science.gov (United States)

    Nikolaidou, Katerina; Sarang, Som; Tung, Vincent; Lu, Jennifer; Ghosh, Sayantani

    Optimum interaction between light harvesting media and electron transport layers is critical for the efficient operation of photovoltaic devices. In this work, ZnO layers of different morphologies are implemented as electron extraction and transport layers for hybrid perovskite CH3NH3PbI3 thin films. These include nanowires, nanoparticles, and single crystalline film. Charge transfer at the ZnO/perovskite interface is investigated and compared through ultra-fast characterization techniques, including temperature and power dependent spectroscopy, and time-resolved photoluminescence. The nanowires cause an enhancement in perovskite emission, which may be attributed to increased scattering and grain boundary formation. However, the ZnO layers with decreasing surface roughness exhibit better electron extraction, as inferred from photoluminescence quenching, reduction in the number of bound excitons, and reduced exciton lifetime in CH3NH3PbI3 samples. This systematic study is expected to provide an understanding of the fundamental processes occurring at the ZnO-CH3NH3PbI3 interface and ultimately, provide guidelines for the ideal configuration of ZnO-based hybrid Perovskite devices. This research was supported by National Aeronautics and Space administration (NASA) Grant No: NNX15AQ01A.

  8. Theoretical investigation of electronic and magnetic properties of HoRh layers

    International Nuclear Information System (INIS)

    Masrour, R.; Hlil, E.K.; Hamedoun, M.; Benyoussef, A.; Mounkachi, O.; Bahmad, L.; El Moussaoui, H.

    2013-01-01

    Self-consistent ab initio calculations, based on Density Functional Theory (DFT) approach and using Full potential Linear Augmented Plane Wave (FLAPW) method, are performed to investigate both electronic and magnetic properties of the HoRh layers. Polarized spin and spin–orbit coupling are included in calculations within the framework of the antiferromagnetic state between two sites of Ho. Magnetic moment considered to lie along (001) axes are computed. The data obtained from the ab initio calculations are then used as input for the high temperature series expansions (HTSEs) calculations to compute other magnetic parameters. The exchange integrals between the magnetic atoms in the same sites are given by using mean field theory. The HTSEs of the magnetic susceptibility of HoRh layers spin-S through the Ising model for HoRh layers, are studied to tenth order series in β=1/k B T. The critical exponent γ associated with the magnetic susceptibility is deduced for two models. - Highlights: • Ab initio calculations is using to investigate both electronic and magnetic properties of the HoRh layers. • Obtained data from ab initio calculations are used as input for the HTSEs. • The Néel temperature is obtained for HoRh layers

  9. Theoretical investigation of electronic and magnetic properties of HoRh layers

    Energy Technology Data Exchange (ETDEWEB)

    Masrour, R., E-mail: rachidmasrour@hotmail.com [Laboratory of Materials, Processes, Environment and Quality, Cady Ayyed University, National School of Applied Sciences, Sidi Bouzid, Safi (Morocco); LMPHE (URAC 12), Faculty of Science, Mohammed V-Agdal University, Rabat (Morocco); Hlil, E.K. [Institut Néel, CNRS et Université Joseph Fourier, BP 166, F-38042 Grenoble cedex 9 (France); Hamedoun, M. [Institute of Nanomaterials and Nanotechnologies, MAScIR, Rabat (Morocco); Benyoussef, A. [LMPHE (URAC 12), Faculty of Science, Mohammed V-Agdal University, Rabat (Morocco); Institute of Nanomaterials and Nanotechnologies, MAScIR, Rabat (Morocco); Hassan II Academy of Science and Technology, Rabat (Morocco); Mounkachi, O. [Institute of Nanomaterials and Nanotechnologies, MAScIR, Rabat (Morocco); Bahmad, L. [LMPHE (URAC 12), Faculty of Science, Mohammed V-Agdal University, Rabat (Morocco); El Moussaoui, H. [Institute of Nanomaterials and Nanotechnologies, MAScIR, Rabat (Morocco)

    2013-10-15

    Self-consistent ab initio calculations, based on Density Functional Theory (DFT) approach and using Full potential Linear Augmented Plane Wave (FLAPW) method, are performed to investigate both electronic and magnetic properties of the HoRh layers. Polarized spin and spin–orbit coupling are included in calculations within the framework of the antiferromagnetic state between two sites of Ho. Magnetic moment considered to lie along (001) axes are computed. The data obtained from the ab initio calculations are then used as input for the high temperature series expansions (HTSEs) calculations to compute other magnetic parameters. The exchange integrals between the magnetic atoms in the same sites are given by using mean field theory. The HTSEs of the magnetic susceptibility of HoRh layers spin-S through the Ising model for HoRh layers, are studied to tenth order series in β=1/k{sub B}T. The critical exponent γ associated with the magnetic susceptibility is deduced for two models. - Highlights: • Ab initio calculations is using to investigate both electronic and magnetic properties of the HoRh layers. • Obtained data from ab initio calculations are used as input for the HTSEs. • The Néel temperature is obtained for HoRh layers.

  10. Electron Beam Mediated Simple Synthetic Route to Preparing Layered Zinc Hydroxide

    International Nuclear Information System (INIS)

    Bae, Hyo Sun; Jung, Hyun

    2012-01-01

    We have developed a novel and eco-friendly synthetic route for the preparation of a two-dimensional layered zinc hydroxide with intercalated nitrate anions. The layered zinc hydroxide nitrate, called 'zinc basic salt', was, in general, successfully synthesized, using an electron beam irradiation technique. The 2-propanol solutions containing hydrated zinc nitrate were directly irradiated with an electron-beam at room temperature, under atmospheric conditions, without stabilizers or base molecules. Under electron beam irradiation, the reactive OH· radicals were generated by radiolysis of water molecules in precursor metal salts. After further radiolytic processes, the hydroxyl anions might be formed by the reaction of solvated electrons and the OH· radical. Finally, the Zn 5 (OH) 8 (NO 3 ) 2 ·2H 2 O was precipitated by the reaction of zinc cation and hydroxyl anions. Structure and morphology of obtained compounds were characterized by powder X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and high resolution transmission electron microscopy (HR-TEM). The chemical components of the products were determined by Fourier transform infrared spectroscopy (FT-IR) and elemental analysis (EA). The thermal behavior of products was studied by thermogravimetric (TG) and differential thermal analysis (DTA)

  11. Semiconducting Polymer Photodetectors with Electron and Hole Blocking Layers: High Detectivity in the Near-Infrared

    Directory of Open Access Journals (Sweden)

    Xiong Gong

    2010-07-01

    Full Text Available Sensing from the ultraviolet-visible to the infrared is critical for a variety of industrial and scientific applications. Photodetectors with broad spectral response, from 300 nm to 1,100 nm, were fabricated using a narrow-band gap semiconducting polymer blended with a fullerene derivative. By using both an electron-blocking layer and a hole-blocking layer, the polymer photodetectors, operating at room temperature, exhibited calculated detectivities greater than 1013 cm Hz1/2/W over entire spectral range with linear dynamic range approximately 130 dB. The performance is comparable to or even better than Si photodetectors.

  12. The inversion layer of electric fields and electron phase-space-hole structure during two-dimensional collisionless magnetic reconnection

    International Nuclear Information System (INIS)

    Chen Lijen; Lefebvre, Bertrand; Torbert, Roy B.; Daughton, William S.

    2011-01-01

    Based on two-dimensional fully kinetic simulations that resolve the electron diffusion layer in undriven collisionless magnetic reconnection with zero guide field, this paper reports the existence and evolution of an inversion layer of bipolar electric fields, its corresponding phase-space structure (an electron-hole layer), and the implication to collisionless dissipation. The inversion electric field layer is embedded in the layer of bipolar Hall electric field and extends throughout the entire length of the electron diffusion layer. The electron phase-space hole structure spontaneously arises during the explosive growth phase when there exist significant inflows into the reconnection layer, and electrons perform meandering orbits across the layer while being cyclotron-turned toward the outflow directions. The cyclotron turning of meandering electrons by the magnetic field normal to the reconnection layer is shown to be a primary factor limiting the current density in the region where the reconnection electric field is balanced by the gradient (along the current sheet normal) of the off-diagonal electron pressure-tensor.

  13. Multifunctional Inverse Opal-Like TiO2 Electron Transport Layer for Efficient Hybrid Perovskite Solar Cells.

    Science.gov (United States)

    Chen, Xiao; Yang, Shuang; Zheng, Yi Chu; Chen, Ying; Hou, Yu; Yang, Xiao Hua; Yang, Hua Gui

    2015-09-01

    A novel multifunctional inverse opal-like TiO 2 electron transport layer (IOT-ETL) is designed to replace the traditional compact layer and mesoporous scaffold layer in perovskite solar cells (PSCs). Improved light harvesting efficiency and charge transporting performance in IOT-ETL based PSCs yield high power conversion efficiency of 13.11%.

  14. Tailoring the laser pulse shape to improve the quality of the self-injected electron beam in laser wakefield acceleration

    International Nuclear Information System (INIS)

    Upadhyay, Ajay K.; Samant, Sushil A.; Krishnagopal, S.

    2013-01-01

    In laser wakefield acceleration, tailoring the shape of the laser pulse is one way of influencing the laser-plasma interaction and, therefore, of improving the quality of the self-injected electron beam in the bubble regime. Using three-dimensional particle-in-cell simulations, the evolution dynamics of the laser pulse and the quality of the self-injected beam, for a Gaussian pulse, a positive skew pulse (i.e., one with sharp rise and slow fall), and a negative skew pulse (i.e., one with a slow rise and sharp fall) are studied. It is observed that with a negative skew laser pulse there is a substantial improvement in the emittance (by around a factor of two), and a modest improvement in the energy-spread, compared to Gaussian as well as positive skew pulses. However, the injected charge is less in the negative skew pulse compared to the other two. It is also found that there is an optimal propagation distance that gives the best beam quality; beyond this distance, though the energy increases, the beam quality deteriorates, but this deterioration is least for the negative skew pulse. Thus, the negative skew pulse gives an improvement in terms of beam quality (emittance and energy spread) over what one can get with a Gaussian or positive skew pulse. In part, this is because of the lesser injected charge, and the strong suppression of continuous injection for the negative skew pulse.

  15. A Strategy to Enhance the Efficiency of Quantum Dot-Sensitized Solar Cells by Decreasing Electron Recombination with Polyoxometalate/TiO2 as the Electronic Interface Layer.

    Science.gov (United States)

    Chen, Li; Chen, Weilin; Li, Jianping; Wang, Jiabo; Wang, Enbo

    2017-07-21

    Electron recombination occurring at the TiO 2 /quantum dot sensitizer/electrolyte interface is the key reason for hindering further efficiency improvements to quantum dot sensitized solar cells (QDSCs). Polyoxometalate (POM) can act as an electron-transfer medium to decrease electron recombination in a photoelectric device owing to its excellent oxidation/reduction properties and thermostability. A POM/TiO 2 electronic interface layer prepared by a simple layer-by-layer self-assembly method was added between fluorine-doped tin oxide (FTO) and mesoporous TiO 2 in the photoanode of QDSCs, and the effect on the photovoltaic performance was systematically investigated. Photovoltaic experimental results and the electron transmission mechanism show that the POM/TiO 2 electronic interface layer in the QDSCs can clearly suppress electron recombination, increase the electron lifetime, and result in smoother electron transmission. In summary, the best conversion efficiency of QDSCs with POM/TiO 2 electronic interface layers increases to 8.02 %, which is an improvement of 25.1 % compared with QDSCs without POM/TiO 2 . This work first builds an electron-transfer bridge between FTO and the quantum dot sensitizer and paves the way for further improved efficiency of QDSCs. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Characteristic electron energy loss spectra in SiC buried layers formed by C+ implantation into crystalline silicon

    International Nuclear Information System (INIS)

    Yan Hui; Chen Guanghua; Kwok, R.W.M.

    1998-01-01

    SiC buried layers were synthesized by a metal vapor vacuum arc ion source, with C + ions implanted into crystalline Si substrates. According to X-ray photoelectron spectroscopy, the characteristic electron energy loss spectra of the SiC buried layers were studied. It was found that the characteristic electron energy loss spectra depend on the profiles of the carbon content, and correlate well with the order of the buried layers

  17. Electron microscopy analyses and electrical properties of the layered Bi2WO6 phase

    International Nuclear Information System (INIS)

    Taoufyq, A.; Ait Ahsaine, H.; Patout, L.; Benlhachemi, A.; Ezahri, M.

    2013-01-01

    The bismuth tungstate Bi 2 WO 6 was synthesized using a classical coprecipitation method followed by a calcination process at different temperatures. The samples were characterized by X-ray diffraction, simultaneous thermogravimetry and differential thermal analysis (TGA/DTA), scanning and transmission electron microscopy (SEM, TEM) analyses. The Rietveld analysis and electron diffraction clearly confirmed the Pca2 1 non centrosymmetric space group previously proposed for this phase. The layers Bi 2 O 2 2+ and WO 4 2− have been directly evidenced from the HRTEM images. The electrical properties of Bi 2 WO 6 compacted pellets systems were determined from electrical impedance spectrometry (EIS) and direct current (DC) analyses, under air and argon, between 350 and 700 °C. The direct current analyses showed that the conduction observed from EIS analyses was mainly ionic in this temperature range, with a small electronic contribution. Electrical change above the transition temperature of 660 °C is observed under air and argon atmospheres. The strong conductivity increase observed under argon is interpreted in terms of formation of additional oxygen vacancies coupled with electron conduction. - Graphical abstract: High resolution transmission electron microscopy: inverse fast Fourier transform giving the layered structure of the Bi 2 WO 6 phase, with a representation of the cell dimensions (b and c vectors). The Bi 2 O 2 2+ and WO 4 2− sandwiches are visible in the IFFT image. - Highlights: • Using transmission electron microscopy, we visualize the layered structure of Bi 2 WO 6 . • Electrical analyses under argon gas show some increase in conductivity. • The phase transition at 660 °C is evidenced from electrical modification

  18. Phase space linearization and external injection of electron bunches into laser-driven plasma wakefields at REGAE

    International Nuclear Information System (INIS)

    Zeitler, Benno Michael Georg

    2017-01-01

    Laser Wake field Acceleration (LWFA) has the potential to become the next-generation acceleration technique for electrons. In particular, the large field gradients provided by these plasma-based accelerators are an appealing property, promising a significant reduction of size for future machines and user facilities. Despite the unique advantages of these sources, however, as of today, the produced electron bunches cannot yet compete in all beam quality criteria compared to conventional acceleration methods. Especially the stability in terms of beam pointing and energy gain, as well as a comparatively large energy spread of LWFA electron bunches require further advancement for their applicability. The accelerated particles are typically trapped from within the plasma which is used to create the large field gradients in the wake of a high-power laser. From this results a lack of control and access to observing the actual electron injection - and, consequently, a lack of experimental verification. To tackle this problem, the injection of external electrons into a plasma wakefield seems promising. In this case, the initial beam parameters are known, so that a back-calculation and reconstruction of the wakefield structure are feasible. Such an experiment is planned at the Relativistic Electron Gun for Atomic Exploration (REGAE). REGAE, which is located at DESY in Hamburg, is a small linear accelerator offering unique beam parameters compatible with the requirements of the planned experiment. The observations and results gained from such an external injection are expected to improve the beam quality and stability of internal injection variants, due to the broadened understanding of the underlying plasma dynamics. Furthermore, an external injection will always be required for so-called staging of multiple LWFA-driven cavities. Also, the demonstration of a suchlike merging of conventional and plasma accelerators gives rise to novel hybrid accelerators, where the matured

  19. Phase space linearization and external injection of electron bunches into laser-driven plasma wakefields at REGAE

    Energy Technology Data Exchange (ETDEWEB)

    Zeitler, Benno Michael Georg [Hamburg Univ. (Germany). Fakultaet fuer Mathematik, Informatik und Naturwissenschaften

    2017-01-15

    Laser Wake field Acceleration (LWFA) has the potential to become the next-generation acceleration technique for electrons. In particular, the large field gradients provided by these plasma-based accelerators are an appealing property, promising a significant reduction of size for future machines and user facilities. Despite the unique advantages of these sources, however, as of today, the produced electron bunches cannot yet compete in all beam quality criteria compared to conventional acceleration methods. Especially the stability in terms of beam pointing and energy gain, as well as a comparatively large energy spread of LWFA electron bunches require further advancement for their applicability. The accelerated particles are typically trapped from within the plasma which is used to create the large field gradients in the wake of a high-power laser. From this results a lack of control and access to observing the actual electron injection - and, consequently, a lack of experimental verification. To tackle this problem, the injection of external electrons into a plasma wakefield seems promising. In this case, the initial beam parameters are known, so that a back-calculation and reconstruction of the wakefield structure are feasible. Such an experiment is planned at the Relativistic Electron Gun for Atomic Exploration (REGAE). REGAE, which is located at DESY in Hamburg, is a small linear accelerator offering unique beam parameters compatible with the requirements of the planned experiment. The observations and results gained from such an external injection are expected to improve the beam quality and stability of internal injection variants, due to the broadened understanding of the underlying plasma dynamics. Furthermore, an external injection will always be required for so-called staging of multiple LWFA-driven cavities. Also, the demonstration of a suchlike merging of conventional and plasma accelerators gives rise to novel hybrid accelerators, where the matured

  20. Electron and ion heat transport with lower hybrid current drive and neutral beam injection heating in ASDEX

    International Nuclear Information System (INIS)

    Soeldner, F.X.; Pereverzev, G.V.; Bartiromo, R.; Fahrbach, H.U.; Leuterer, F.; Murmann, H.D.; Staebler, A.; Steuer, K.H.

    1993-01-01

    Transport code calculations were made for experiments with the combined operation of lower hybrid current drive and heating and of neutral beam injection heating on ASDEX. Peaking or flattening of the electron temperature profile are mainly explained by modifications of the MHD induced electron heat transport. They originate from current profile changes due to lower hybrid and neutral beam current drive and to contributions from the bootstrap current. Ion heat transport cannot be described by one single model for all heating scenarios. The ion heat conductivity is reduced during lower hybrid heated phases with respect to Ohmic and neutral beam heating. (author). 13 refs, 5 figs

  1. Local gas injection as a scrape-off layer diagnostic on the Alcator C-Mod tokamak

    International Nuclear Information System (INIS)

    Jablonski, D.F.

    1996-05-01

    A capillary puffing array has been installed on Alcator C-Mod which allows localized introduction of gaseous species in the scrape-off layer. This system has been utilized in experiments to elucidate both global and local properties of edge transport. Deuterium fueling and recycling impurity screening are observed to be characterized by non-dimensional screening efficiencies which are independent of the location of introduction. In contrast, the behavior of non-recycling impurities is seen to be characterized by a screening time which is dependent on puff location. The work of this thesis has focused on the use of the capillary array with a camera system which can view impurity line emission plumes formed in the region of an injection location. The ionic plumes observed extend along the magnetic field line with a comet-like asymmetry, indicative of background plasma ion flow. The flow is observed to be towards the nearest strike-point, independent of x-point location, magnetic field direction, and other plasma parameters. While the axes of the plumes are generally along the field line, deviations are seen which indicate cross-field ion drifts. A quasi-two dimensional fluid model has been constructed to use the plume shapes of the first charge state impurity ions to extract information about the local background plasma, specifically the temperature, parallel flow velocity, and radial electric field. Through comparisons of model results with those of a three dimensional Monte Carlo code, and comparisons of plume extracted parameters with scanning probe measurements, the efficacy of the model is demonstrated. Plume analysis not only leads to understandings of local edge impurity transport, but also presents a novel diagnostic technique

  2. Local gas injection as a scrape-off layer diagnostic on the Alcator C-Mod tokamak

    Energy Technology Data Exchange (ETDEWEB)

    Jablonski, David F. [Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

    1996-05-01

    A capillary puffing array has been installed on Alcator C-Mod which allows localized introduction of gaseous species in the scrape-off layer. This system has been utilized in experiments to elucidate both global and local properties of edge transport. Deuterium fueling and recycling impurity screening are observed to be characterized by non-dimensional screening efficiencies which are independent of the location of introduction. In contrast, the behavior of non-recycling impurities is seen to be characterized by a screening time which is dependent on puff location. The work of this thesis has focused on the use of the capillary array with a camera system which can view impurity line emission plumes formed in the region of an injection location. The ionic plumes observed extend along the magnetic field line with a comet-like asymmetry, indicative of background plasma ion flow. The flow is observed to be towards the nearest strike-point, independent of x-point location, magnetic field direction, and other plasma parameters. While the axes of the plumes are generally along the field line, deviations are seen which indicate cross-field ion drifts. A quasi-two dimensional fluid model has been constructed to use the plume shapes of the first charge state impurity ions to extract information about the local background plasma, specifically the temperature, parallel flow velocity, and radial electric field. Through comparisons of model results with those of a three dimensional Monte Carlo code, and comparisons of plume extracted parameters with scanning probe measurements, the efficacy of the model is demonstrated. Plume analysis not only leads to understandings of local edge impurity transport, but also presents a novel diagnostic technique.

  3. Effects of buried high-Z layers on fast electron propagation

    International Nuclear Information System (INIS)

    Yang, Xiaohu; Zhuo, Hongbin; Ma, Yanyun; Shao, Fuqiu; Xu, Han; Yin Yan; Borghesi, M.

    2014-01-01

    The transport through high density plasmas of relativistic electron beams generated by ultra-intense laser-plasma interaction has potential applications in laser-driven ion acceleration and in the fast igniter scheme for inertial confinement fusion. By extending a prior model [A.R. Bell, J.R. Davies, S.M. Guerin, Phys. Rev. E 58, 2471 (1998)], the magnetic field generated during the transport of a fast electron beam driven by an ultra-intense laser in a solid target is derived analytically and applied to estimate the effect of such field on fast electron propagation through a buried high-Z layer in a lower-Z target. It is found that the effect gets weaker with the increase of the depth of the buried layer, the divergence of the fast electrons, and the laser intensity, indicating that magnetic field effects on the fast electron divergence as measured from K a X-ray emission may need to be considered for moderate laser intensities. On the basis of the calculations, some considerations are made on how one can mitigate the effect of the magnetic field generated at the interface. (authors)

  4. The dependence of potential well formation on the magnetic field strength and electron injection current in a polywell device

    International Nuclear Information System (INIS)

    Cornish, S.; Gummersall, D.; Carr, M.; Khachan, J.

    2014-01-01

    A capacitive probe has been used to measure the plasma potential in a polywell device in order to observe the dependence of potential well formation on magnetic field strength, electron injection current, and polywell voltage bias. The effectiveness of the capacitive probe in a high energy electron plasma was determined by measuring the plasma potential of a planar diode with an axial magnetic field. The capacitive probe was translated along the axis of one of the field coils of the polywell, and the spatial profile of the potential well was measured. The confinement time of electrons in the polywell was estimated with a simple analytical model which used the experimentally observed potential well depths, as well as a simulation of the electron trajectories using particle orbit theory

  5. Ion-acoustic supersolitons and double layers in plasmas with nonthermal electrons

    Science.gov (United States)

    Gao, D.-N.; Zhang, J.; Yang, Y.; Duan, W.-S.

    2017-08-01

    Supersoliton (SS) can be mainly featured in two ways, namely, by focusing on subsidiary maxima on its electric field or by meeting the requirement that the appropriate Sagdeev pseudopotential (SP) has three local extrema between the equilibrium conditions and its amplitude. In this paper, by using the SP method, double layers and ion-acoustic SSs are studied in a plasma with Maxwellian cold electrons, nonthermal hot electrons, and fluid ions. The existence of the SS regime in parameter space is obtained in a methodical fashion. The existence domains for positive solitary waves are also presented. It is found that there is no SSs at the acoustic speed.

  6. Auger electron spectroscopy study on interaction between aluminum thin layers and uranium substrate

    International Nuclear Information System (INIS)

    Zhou Wei; Liu Kezhao; Yang Jiangrong; Xiao Hong; Jiang Chunli; Lu Lei

    2005-01-01

    Aluminum thin layers on uranium were prepared by sputter deposition at room temperature in ultra high vacuum analysis chamber. Interaction between U and Al, and growth mode were investigated by Auger electron spectroscopy (AES) and electron energy loss spectroscopy (EELS). It is shown that Al thin film growth follows the volmer-weber (VW) mode. At room temperature, Al and U interact with each other, resulting in interdiffusion action and formation of U-Al alloys at U/Al interface. Annealing promotes interaction and interdiffusion between U and Al, and UAl x maybe formed at interface. (authors)

  7. Detector and Front-end electronics for ALICE and STAR silicon strip layers

    CERN Document Server

    Arnold, L; Coffin, J P; Guillaume, G; Higueret, S; Jundt, F; Kühn, C E; Lutz, Jean Robert; Suire, C; Tarchini, A; Berst, D; Blondé, J P; Clauss, G; Colledani, C; Deptuch, G; Dulinski, W; Hu, Y; Hébrard, L; Kucewicz, W; Boucham, A; Bouvier, S; Ravel, O; Retière, F

    1998-01-01

    Detector modules consisting of Silicon Strip Detector (SSD) and Front End Electronics (FEE) assembly have been designed in order to provide the two outer layers of the ALICE Inner Tracker System (ITS) [1] as well as the outer layer of the STAR Silicon Vertex Tracker (SVT) [2]. Several prototypes have beenproduced and tested in the SPS and PS beam at CERN to validate the final design. Double-sided, AC-coupled SSD detectors provided by two different manufacturers and also a pair of single-sided SSD have been asssociated to new low-power CMOS ALICE128C ASIC chips in a new detector module assembly. The same detectors have also been associated to current Viking electronics for reference purpose. These prototype detector modules are described and some first results are presented.

  8. Lifetime enhanced phosphorescent organic light emitting diode using an electron scavenger layer

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Seokhwan; Kim, Ji Whan; Lee, Sangyeob, E-mail: sy96.lee@samsung.com [Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, Gyeonggi 443-803 (Korea, Republic of)

    2015-07-27

    We demonstrate a method to improve lifetime of a phosphorescent organic light emitting diode (OLED) using an electron scavenger layer (ESL) in a hole transporting layer (HTL) of the device. We use a bis(1-(phenyl)isoquinoline)iridium(III)acetylacetonate [Ir(piq){sub 2}(acac)] doped HTL to stimulate radiative decay, preventing thermal degradation in HTL. The ESL effectively prevented non-radiative decay of leakage electron in HTL by converting non-radiative decay to radiative decay via a phosphorescent red emitter, Ir(piq){sub 2}(acac). The lifetime of device (t{sub 95}: time after 5% decrease of luminance) has been increased from 75 h to 120 h by using the ESL in a phosphorescent green-emitting OLED.

  9. Novel Electronic and Magnetic Properties of Graphene Nanoflakes in a Boron Nitride Layer

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Yungang; Wang, Zhiguo; Yang, Ping; Gao, Fei

    2012-04-05

    Novel electronic and magnetic properties of various-sized graphene nanoflakes (GNFs) embedded in a boron nitride (BN) layer are studied using ab initio methods. The feasibility of synthesizing hybrid GNF-BN structure, a desirable quantum dot structure, is explored. In this structure, photoexcited electrons and holes occupy the same spatial region - the GNF region - which offers an effective way to generate a GNF-based light-emitting device and adjust its emitted optical properties by controlling the size and array of GNF in the BN layer. Based on the important magnetism properties of embedded GNF, we propose a specific configuration to obtain a large spin. Together with the high stability of spin alignment, the proposed configuration can be exploited for spintronic devices.

  10. High-rate deposition of SI absorber layers by electron beam evaporation and first electron beam crystallization tests

    OpenAIRE

    Saager, Stefan; Ben Yaala, Marwa; Heinß, Jens-Peter; Temmler, Dietmar; Pfefferling, Bert; Metzner, Christoph

    2014-01-01

    In earlier electron beam physical vapor deposition tests (EB-PVD), using a conventional copper crucible (A), high Si deposition rates at relatively high EB power together with a contamination level of 1016 cm-3 are demonstrated. To improve the rate vs. EB power relation as well as the Si layer purity, two alternative high rate EBPVD methods are investigated and reported here - a contact-less crucible setup (B) and a crucible-free setup (C).In these experiments comparable deposition rates of ~...

  11. Planar heterojunction perovskite solar cell based on CdS electron transport layer

    KAUST Repository

    Abulikemu, Mutalifu

    2017-07-02

    We report on planar heterojunction perovskite solar cells employing a metal chalcogenide (CdS) electron transport layer with power conversion efficiency up to 10.8%. The CdS layer was deposited via solution-process chemical bath deposition at low-temperature (60°C). Pinhole-free and uniform thin films were obtained with good structural, optical and morphological properties. An optimal layer thickness of 60nm yielded an improved open-circuit voltage and fill factor compared to the standard TiO2-based solar cells. Devices showed a higher reproducibility of the results compared to TiO2-based ones. We also tested the effect of annealing temperature on the CdS film and the effect of CdCl2 treatment followed by high temperature annealing (410°C) that is expected to passivate the surface, thus eliminating eventual trap-states inducing recombination.

  12. Nanoparticle mediated electron transfer across organic layers: from current understanding to applications

    Energy Technology Data Exchange (ETDEWEB)

    Gooding, J. Justin; Alam, Muhammad Tanzirul; Barfidokht, Abbas; Carter, Lachlan, E-mail: justin.gooding@unsw.edu.au [School of Chemistry and Australian Centre for NanoMedicine, The University of New South Wales, Sydney (Australia)

    2014-03-15

    In the last few years electrode-organic layer-nanoparticle constructs have attracted considerable research interest for systems where in the absence of the nanoparticles the electrode is passivated. This is because it has been observed that if the organic layer is a good self-assembled monolayer that passivates the electrode, the presence of the nanoparticles 'switches on' faradaic electrochemistry and because electron transfer between the electrode and the nanoparticles is apparently independent of the thickness of the organic layer. This review 1) outlines the full extent of the experimental observations regarding this phenomenon, 2) discusses a recent theoretical description to explain the observations that have just been supported with experimental evidences and 3) provides an overview of the application of these systems in sensing and photovoltaic. (author)

  13. Planar heterojunction perovskite solar cell based on CdS electron transport layer

    KAUST Repository

    Abulikemu, Mutalifu; Barbe, Jeremy; El Labban, Abdulrahman; Eid, Jessica; Del Gobbo, Silvano

    2017-01-01

    We report on planar heterojunction perovskite solar cells employing a metal chalcogenide (CdS) electron transport layer with power conversion efficiency up to 10.8%. The CdS layer was deposited via solution-process chemical bath deposition at low-temperature (60°C). Pinhole-free and uniform thin films were obtained with good structural, optical and morphological properties. An optimal layer thickness of 60nm yielded an improved open-circuit voltage and fill factor compared to the standard TiO2-based solar cells. Devices showed a higher reproducibility of the results compared to TiO2-based ones. We also tested the effect of annealing temperature on the CdS film and the effect of CdCl2 treatment followed by high temperature annealing (410°C) that is expected to passivate the surface, thus eliminating eventual trap-states inducing recombination.

  14. Low frequency solitons and double layers in a magnetized plasma with two temperature electrons

    Energy Technology Data Exchange (ETDEWEB)

    Rufai, O. R. [Department of Physics, University of the Western Cape, Private Bag X17, Bellville 7535 (South Africa); Bharuthram, R. [Office of the Deputy Vice Chancellor (Academic), University of the Western Cape, Bellville (South Africa); Singh, S. V. [Indian Institute of Geomagnetism, New Panvel (W), Navi Mumbai-410218 (India); School of Chemistry and Physics, University of Kwa-Zulu Natal, Durban (South Africa); Lakhina, G. S. [Indian Institute of Geomagnetism, New Panvel (W), Navi Mumbai-410218 (India)

    2012-12-15

    Finite amplitude non-linear ion-acoustic solitary waves and double layers are studied in a magnetized plasma with cold ions fluid and two distinct groups of Boltzmann electrons, using the Sagdeev pseudo-potential technique. The conditions under which the solitary waves and double layers can exist are found both analytically and numerically. We have shown the existence of negative potential solitary waves and double layers for subsonic Mach numbers, whereas in the unmagnetized plasma they can only in the supersonic Mach number regime. For the plasma parameters in the auroral region, the electric field amplitude of the solitary structures comes out to be 49 mV/m which is in agreement of the Viking observations in this region.

  15. Low frequency solitons and double layers in a magnetized plasma with two temperature electrons

    International Nuclear Information System (INIS)

    Rufai, O. R.; Bharuthram, R.; Singh, S. V.; Lakhina, G. S.

    2012-01-01

    Finite amplitude non-linear ion-acoustic solitary waves and double layers are studied in a magnetized plasma with cold ions fluid and two distinct groups of Boltzmann electrons, using the Sagdeev pseudo-potential technique. The conditions under which the solitary waves and double layers can exist are found both analytically and numerically. We have shown the existence of negative potential solitary waves and double layers for subsonic Mach numbers, whereas in the unmagnetized plasma they can only in the supersonic Mach number regime. For the plasma parameters in the auroral region, the electric field amplitude of the solitary structures comes out to be 49 mV/m which is in agreement of the Viking observations in this region.

  16. Phonon and electron temperature and non-Fourier heat transport in thin layers

    Energy Technology Data Exchange (ETDEWEB)

    Carlomagno, I.; Cimmelli, V.A. [Department of Mathematics, Computer Science and Economics, University of Basilicata, Campus Macchia Romana, Viale dell' Ateneo Lucano 10, 85100 Potenza (Italy); Sellitto, A. [Department of Industrial Engineering, University of Salerno, Via Giovanni Paolo II, 132, 84084 Fisciano (Italy)

    2017-04-15

    We present a thermodynamic model of heat conductor which allows for different temperatures of phonons and electrons. This model is applied to calculate the steady-state radial temperature profile in a circular thin layer. The compatibility of the obtained temperature profiles with the second law of thermodynamics is investigated in view of the requirement of positive entropy production and of a nonlocal constitutive equation for the entropy flux.

  17. Enhanced electron-lattice coupling under uniaxial stress in layered double hydroxides intercalated with samarium complexes

    International Nuclear Information System (INIS)

    Park, Ta-Ryeong

    2004-01-01

    We have applied uniaxial stress to samarium complexes by intercalating them into the gallery of a layered material and by using a diamond-anvil cell at 28 K. Although uniaxial stress reduces symmetry and removes degeneracy, the overall number of photoluminescence (PL) peaks evidently decreased with the application of uniaxial stress. This contradictory observation is explained by an increased electron-lattice coupling strength under uniaxial stress. This behavior is also confirmed by time-resolved PL data.

  18. Layered-metal-hydroxide nanosheet arrays with controlled nanostructures to assist direct electronic communication at biointerfaces.

    Science.gov (United States)

    An, Zhe; Lu, Shan; Zhao, Liwei; He, Jing

    2011-10-18

    In this work, ordered vertical arrays of layered double hydroxide (LDH) nanosheets have been developed to achieve electron transfer (eT) at biointerfaces in electrochemical devices. It is found that tailoring the gap size of LDH nanosheet arrays could significantly promote the eT rate. This research has successfully extended nanomaterials for efficient modifications of electrode surfaces from nanoparticles, nanowires, nanorods, and nanotubes to nanosheets. © 2011 American Chemical Society

  19. Thermal modeling of multi-shape heating sources on n-layer electronic board

    Directory of Open Access Journals (Sweden)

    Monier-Vinard Eric

    2017-01-01

    Full Text Available The present work completes the toolbox of analytical solutions that deal with resolving steady-state temperatures of a multi-layered structure heated by one or many heat sources. The problematic of heating sources having non-rectangular shapes is addressed to enlarge the capability of analytical approaches. Moreover, various heating sources could be located on the external surfaces of the sandwiched layers as well as embedded at interface of its constitutive layers. To demonstrate its relevance, the updated analytical solution has been compared with numerical simulations on the case of a multi-layered electronic board submitted to a set of heating source configurations. The comparison shows a high agreement between analytical and numerical calculations to predict the centroid and average temperatures. The promoted analytical approach establishes a kit of practical expressions, easy to implement, which would be cumulated, using superposition principle, to help electronic designers to early detect component or board temperatures beyond manufacturer limit. The ability to eliminate bad concept candidates with a minimum of set-up, relevant assumptions and low computation time can be easily achieved.

  20. Theoretical investigation of electronic and magnetic properties of MnAu layers

    Energy Technology Data Exchange (ETDEWEB)

    Masrour, R., E-mail: rachidmasrour@hotmail.com [Laboratory of Materials, Processes, Environment and Quality, Cady Ayyed University, National School of Applied Sciences, BP 63, 46000, Sidi Bouzid, Safi (Morocco); LMPHE (URAC 12), Faculty of Science, Mohammed V-Agdal University, Rabat (Morocco); Hlil, E.K. [Institut Neel, CNRS et Universite Joseph Fourier, BP 166, F-38042 Grenoble cedex 9 (France); Hamedoun, M. [Institute of Nanomaterials and Nanotechnologies, MAScIR, Rabat (Morocco); Benyoussef, A. [LMPHE (URAC 12), Faculty of Science, Mohammed V-Agdal University, Rabat (Morocco); Institute of Nanomaterials and Nanotechnologies, MAScIR, Rabat (Morocco); Hassan II Academy of Science and Technology, Rabat (Morocco); Mounkachi, O. [Institute of Nanomaterials and Nanotechnologies, MAScIR, Rabat (Morocco); Bahmad, L. [LMPHE (URAC 12), Faculty of Science, Mohammed V-Agdal University, Rabat (Morocco)

    2013-01-15

    Self-consistent ab initio calculations, based on the density functional theory (DFT) approach and using the full potential linear augmented plane wave (FLAPW) method, are performed to investigate both electronic and magnetic properties of the MnAu layers. Polarized spin and spin-orbit coupling are included in calculations within the framework of the antiferromagnetic state between two adjacent Mn layers. Magnetic moment considered to lie along a axes are computed. The data obtained from the ab initio calculations are then used as input for the high temperature series expansions (HTSEs) calculation to compute other magnetic parameters. The exchange integrals between the magnetic atoms in the same layer and between the magnetic atoms in the bilayers adjacent are given by using mean field theory. The HTSEs of the magnetic susceptibility of MnAu antiferromagnetic spin-S through two model: Ising and XY layers consisting of l=2, 3, 4, 5, 6 and bulk ({infinity}) interacting layers, are studied to sixth order series in {beta}=1/k{sub B}T obtained for free-surface boundary conditions. The effects of finite size on critical-point behavior are studied by extrapolation of the high-temperature series. The Neel temperature T{sub N}(l) as a function of the number of l spin layers is obtained by HTSEs of the magnetic susceptibility series by using the Pade approximant method and by MFT theory. The critical exponent {gamma} associated with the magnetic susceptibility is deduced. T{sub N}(l) for the l-layers are estimated from the divergence of the staggered susceptibility with an exponent for Ising model of {gamma}(1)=2.96, and for XY model of {gamma}(2)=2.82, which is consistent with the basic assumptions of scaling laws. Our estimates for the shift exponent of the Neel temperature for the two models are obtained. - Highlights: Black-Right-Pointing-Pointer ab initio calculations is using to investigate both electronic and magnetic properties of the MnAu layers. Black

  1. Theoretical investigation of electronic and magnetic properties of MnAu layers

    International Nuclear Information System (INIS)

    Masrour, R.; Hlil, E.K.; Hamedoun, M.; Benyoussef, A.; Mounkachi, O.; Bahmad, L.

    2013-01-01

    Self-consistent ab initio calculations, based on the density functional theory (DFT) approach and using the full potential linear augmented plane wave (FLAPW) method, are performed to investigate both electronic and magnetic properties of the MnAu layers. Polarized spin and spin–orbit coupling are included in calculations within the framework of the antiferromagnetic state between two adjacent Mn layers. Magnetic moment considered to lie along a axes are computed. The data obtained from the ab initio calculations are then used as input for the high temperature series expansions (HTSEs) calculation to compute other magnetic parameters. The exchange integrals between the magnetic atoms in the same layer and between the magnetic atoms in the bilayers adjacent are given by using mean field theory. The HTSEs of the magnetic susceptibility of MnAu antiferromagnetic spin-S through two model: Ising and XY layers consisting of l=2, 3, 4, 5, 6 and bulk (∞) interacting layers, are studied to sixth order series in β=1/k B T obtained for free-surface boundary conditions. The effects of finite size on critical-point behavior are studied by extrapolation of the high-temperature series. The Néel temperature T N (l) as a function of the number of l spin layers is obtained by HTSEs of the magnetic susceptibility series by using the Padé approximant method and by MFT theory. The critical exponent γ associated with the magnetic susceptibility is deduced. T N (l) for the l-layers are estimated from the divergence of the staggered susceptibility with an exponent for Ising model of γ(1)=2.96, and for XY model of γ(2)=2.82, which is consistent with the basic assumptions of scaling laws. Our estimates for the shift exponent of the Néel temperature for the two models are obtained. - Highlights: ► ab initio calculations is using to investigate both electronic and magnetic properties of the MnAu layers. ► Obtained data from ab initio calculations are used as input for the HTSEs

  2. Current drive with fast waves, electron cyclotron waves, and neutral injection in the DIII-D tokamak

    International Nuclear Information System (INIS)

    Prater, R.; Petty, C.C.; Pinsker, R.I.

    1993-01-01

    Current drive experiments have been performed on the DIII-D tokamak using fast waves, electron cyclotron waves, and neutral injection. Fast wave experiments were performed using a 4-strap antenna with 1 MW of power at 60 MHz. These experiments showed effective heating of electrons, with a global heating efficiency equivalent to that of neutral injection even when the single pass damping was calculated to be as small as 5%. The damping was probably due to the effect of multiple passes of the wave through the plasma. Fast wave current drive experiments were performed with a toroidally directional phasing of the antenna straps. Currents driven by fast wave current drive (FWCD) in the direction of the main plasma current of up to 100 kA were found, not including a calculated 40 kA of bootstrap current. Experiments with FWCD in the counter current direction showed little current drive. In both cases, changes in the sawtooth behavior and the internal inductance qualitatively support the measurement of FWCD. Experiments on electron cyclotron current drive have shown that 100 kA of current can be driven by 1 MW of power at 60 GHz. Calculations with a Fokker-Planck code show that electron cyclotron current drive (ECCD) can be well predicted when the effects of electron trapping and of the residual electric field are included. Experiments on driving current with neutral injection showed that effective current drive could be obtained and discharges with full current drive were demonstrated. Interestingly, all of these methods of current drive had about the same efficiency. (Author)

  3. Current drive with fast waves, electron cyclotron waves, and neutral injection in the DIII-D tokamak

    International Nuclear Information System (INIS)

    Prater, R.; Petty, C.C.; Pinsker, R.I.; Chiu, S.C.; deGrassie, J.S.; Harvey, R.W.; Ikel, H.; Lin-Liu, Y.R.; Luce, T.C.; James, R.A.; Porkolab, M.; Baity, F.W.; Goulding, R.H.; Hoffmann, D.J.; Kawashima, H.; Trukhin, V.

    1992-09-01

    Current drive experiments have been performed on the DIII-D tokamak using fast waves, electron cyclotron waves, and neutral injection. Fast wave experiments were performed using a 4-strap antenna with 1 MW of power at 60 MHz. These experiments showed effective heating of electrons, with a global heating efficiency equivalent to that of neutral injection even when the single pass damping was calculated to be as small as 5%. The damping was probably due to the effect of multiple passes of the wave through the plasma. Fast wave current drive experiments were performed with a toroidally directional phasing of the antenna straps. Currents driven by fast wave current drive (FWCD) in the direction of the main plasma current of up to 100 kA were found, not including a calculated 40 kA of bootstrap current. Experiments with FWCD in the counter current direction showed little current drive. In both cases, changes in the sawtooth behavior and the internal inductance qualitatively support the measurement of FWCD. Experiments on electron cyclotron current drive have shown that 100 kA of current can be driven by 1 MW of power at 60 GHz. Calculations with a Fokker-Planck code show that electron cyclotron current drive (ECCD) can be well predicted when the effects of electron trapping and of the residual electric field are included. Experiments on driving current with neutral injection showed that effective current drive could be obtained and discharges with full current drive were demonstrated. Interestingly, all of these methods of current drive had about the same efficiency, 0.015 x 10 20 MA/MW/m 2

  4. Layer-dependent anisotropic electronic structure of freestanding quasi-two-dimensional Mo S 2

    KAUST Repository

    Hong, Jinhua; Li, Kun; Jin, Chuanhong; Zhang, Xixiang; Zhang, Ze; Yuan, Jun

    2016-01-01

    The anisotropy of the electronic transition is a well-known characteristic of low-dimensional transition-metal dichalcogenides, but their layer-thickness dependence has not been properly investigated experimentally until now. Yet, it not only determines the optical properties of these low-dimensional materials, but also holds the key in revealing the underlying character of the electronic states involved. Here we used both angle-resolved electron energy-loss spectroscopy and spectral analysis of angle-integrated spectra to study the evolution of the anisotropic electronic transition involving the low-energy valence electrons in the freestanding MoS2 layers with different thicknesses. We are able to demonstrate that the well-known direct gap at 1.8 eV is only excited by the in-plane polarized field while the out-of-plane polarized optical gap is 2.4 ± 0.2 eV in monolayer MoS2. This contrasts with the much smaller anisotropic response found for the indirect gap in the few-layer MoS2 systems. In addition, we determined that the joint density of states associated with the indirect gap transition in the multilayer systems and the corresponding indirect transition in the monolayer case has a characteristic three-dimensional-like character. We attribute this to the soft-edge behavior of the confining potential and it is an important factor when considering the dynamical screening of the electric field at the relevant excitation energies. Our result provides a logical explanation for the large sensitivity of the indirect transition to thickness variation compared with that for the direct transition, in terms of quantum confinement effect.

  5. Layer-dependent anisotropic electronic structure of freestanding quasi-two-dimensional Mo S 2

    KAUST Repository

    Hong, Jinhua

    2016-02-29

    The anisotropy of the electronic transition is a well-known characteristic of low-dimensional transition-metal dichalcogenides, but their layer-thickness dependence has not been properly investigated experimentally until now. Yet, it not only determines the optical properties of these low-dimensional materials, but also holds the key in revealing the underlying character of the electronic states involved. Here we used both angle-resolved electron energy-loss spectroscopy and spectral analysis of angle-integrated spectra to study the evolution of the anisotropic electronic transition involving the low-energy valence electrons in the freestanding MoS2 layers with different thicknesses. We are able to demonstrate that the well-known direct gap at 1.8 eV is only excited by the in-plane polarized field while the out-of-plane polarized optical gap is 2.4 ± 0.2 eV in monolayer MoS2. This contrasts with the much smaller anisotropic response found for the indirect gap in the few-layer MoS2 systems. In addition, we determined that the joint density of states associated with the indirect gap transition in the multilayer systems and the corresponding indirect transition in the monolayer case has a characteristic three-dimensional-like character. We attribute this to the soft-edge behavior of the confining potential and it is an important factor when considering the dynamical screening of the electric field at the relevant excitation energies. Our result provides a logical explanation for the large sensitivity of the indirect transition to thickness variation compared with that for the direct transition, in terms of quantum confinement effect.

  6. The effects of photovoltaic electricity injection into microgrids: Combination of Geographical Information Systems, multicriteria decision methods and electronic control modeling

    International Nuclear Information System (INIS)

    Roa-Escalante, Gino de Jesús; Sánchez-Lozano, Juan Miguel; Faxas, Juan-Gabriel; García-Cascales, M. Socorro; Urbina, Antonio

    2015-01-01

    Highlights: • Geographical Information Systems can be used as a support to classify the viable locations for photovoltaic facilities. • Multicriteria decision methods are useful tools to choose the optimal locations for photovoltaic systems. • Variations of photovoltaic power injected into the grid have been calculated for the optimum locations. • Grid stabilization can be achieved within 500 ms with electronic control strategies. - Abstract: This article presents a model to calculate the impact on the grid of the injection of electricity generated from photovoltaic systems. The methodology combines the use of Geographical Information System tools to classify the optimal locations for the installation of photovoltaic systems with the calculation of the impact into microgrids of the electricity generated in such locations. The case study is focused on Murcia region, in South-east Spain, and on medium size photovoltaic systems. The locations have been selected from a Geographical Information System database including several parameters, and evaluated and classified using a fuzzy version of the multicriteria decision method called Technique for Order Preference by Similarity to Ideal Solution. In order to obtain the weights for the criteria used in the evaluation, the Analytic Hierarchy Process has been used. Finally, using meteorological data from a small set of possible locations, the impact on the grid arising from the injection of power generated from photovoltaic systems that are connected to the grid via a module implementing different control electronic strategies has been calculated. Different electronic control strategies have been modeled to demonstrate that stabilization of the electrical parameters of a microgrid can be obtained within 500 ms in all cases, even when a relatively large power surge, or slower variations, are injected into the grid from the medium size photovoltaic systems

  7. Silicon-ion-implanted PMMA with nanostructured ultrathin layers for plastic electronics

    Science.gov (United States)

    Hadjichristov, G. B.; Ivanov, Tz E.; Marinov, Y. G.

    2014-12-01

    Being of interest for plastic electronics, ion-beam produced nanostructure, namely silicon ion (Si+) implanted polymethyl-methacrylate (PMMA) with ultrathin nanostructured dielectric (NSD) top layer and nanocomposite (NC) buried layer, is examined by electric measurements. In the proposed field-effect organic nanomaterial structure produced within the PMMA network by ion implantation with low energy (50 keV) Si+ at the fluence of 3.2 × 1016 cm-2 the gate NSD is ion-nanotracks-modified low-conductive surface layer, and the channel NC consists of carbon nanoclusters. In the studied ion-modified PMMA field-effect configuration, the gate NSD and the buried NC are formed as planar layers both with a thickness of about 80 nm. The NC channel of nano-clustered amorphous carbon (that is an organic semiconductor) provides a huge increase in the electrical conduction of the material in the subsurface region, but also modulates the electric field distribution in the drift region. The field effect via the gate NSD is analyzed. The most important performance parameters, such as the charge carrier field-effect mobility and amplification of this particular type of PMMA- based transconductance device with NC n-type channel and gate NSD top layer, are determined.

  8. METHOD AND APPARATUS FOR INJECTING AND TRAPPING ELECTRONS IN A MAGNETIC FIELD

    Science.gov (United States)

    Christofilos, N.C.

    1962-05-29

    An apparatus is designed for the manipulation of electrons in an exially symmetric magnetic field region and may be employed to trap electrons in such a field by directing an electron beam into a gradientially intensified field region therein to form an annular electron moving axially in the field and along a decreasing field gradient. Dissipative loop circuits such as resistive loops are disposed along at least the decreasing field gradient so as to be inductively coupled to the electron bunch so as to extract energy of the electron bunch and provide a braking force effective to reduce the velocity of the bunch. Accordingly, the electron bunch upon entering a lower intensity magnetic field region is retained therein since the electrons no longer possess sufficient energy to escape. (AEC)

  9. Characterization of Li-rich layered oxides by using transmission electron microscope

    Directory of Open Access Journals (Sweden)

    Hu Zhao

    2017-07-01

    Full Text Available Lithium-rich layered oxides (LrLOs deliver extremely high specific capacities and are considered to be promising candidates for electric vehicle and smart grid applications. However, the application of LrLOs needs further understanding of the structural complexity and dynamic evolution of monoclinic and rhombohedral phases, in order to overcome the issues including voltage decay, poor rate capability, initial irreversible capacity loss and etc. The development of aberration correction for the transmission electron microscope and concurrent progress in electron spectroscopy, have fueled rapid progress in the understanding of the mechanism of such issues. New techniques based on the transmission electron microscope are first surveyed, and the applications of these techniques for the study of the structure, migration of transition metal, and the activation of oxygen of LrLOs are then explored in detail, with a particular focus on the mechanism of voltage decay. Keywords: Lithium-ion battery, Transmission electron microscope, Lithium-rich layered oxide, Cathode material

  10. Transmission electron microscopy characterization of Zircaloy-4 and ZIRLO™ oxide layers

    International Nuclear Information System (INIS)

    Gabory, Benoit de; Motta, Arthur T.; Wang, Ke

    2015-01-01

    Waterside corrosion of zirconium alloy nuclear fuel cladding varies markedly from one alloy to another. In addition, for a given alloy, the corrosion rate evolves during the corrosion process, most notably when the oxide loses its stability at the oxide transition. In an effort to understand the mechanism resulting in the variations of corrosion rate observed at the oxide transition, oxide layers formed on Zircaloy-4 and ZIRLO™ in high temperature water autoclave environments, and archived before and after the transition, are characterized using transmission electron microscopy. The study characterizes and compares the oxide morphology in both alloys at different times during the corrosion process, in an effort to understand the oxide growth mechanism for these alloys. Results show that the oxide is mainly composed of monoclinic ZrO 2 , with a preponderance of columnar oxide grains which extend to the oxide/metal interface. The oxide formed right after the transition has occurred, exhibits a 150 nm-wide layer of small equiaxed grains with high tetragonal oxide fraction. This layer has a similar morphology and structure as the first oxide layer formed (observed near the oxide/water interface). A study of the oxygen-rich region near the oxide/metal interface reveals a complex structure of different phases at different stages of corrosion. The interface exhibits an intermediate layer, identified as ZrO, a discontinuous layer of “blocky” Zr 3 O grains embedded in the ZrO layer, and a suboxide layer corresponding to an oxygen saturated solid solution in the metal matrix side. The thickness of this interfacial layer decreased markedly at the transition. Hydrides are also observed in that region, with a definite orientation relationship with the matrix. The observations of the oxide/metal interface are qualitatively similar for the two alloys but quantitatively different. The incorporation of intermetallic precipitates into the oxide layer is also studied, and

  11. Control of electronic properties of 2D carbides (MXenes) by manipulating their transition metal layers

    KAUST Repository

    Anasori, Babak

    2016-02-24

    In this study, a transition from metallic to semiconducting-like behavior has been demonstrated in two-dimensional (2D) transition metal carbides by replacing titanium with molybdenum in the outer transition metal (M) layers of M3C2 and M4C3 MXenes. The MXene structure consists of n + 1 layers of near-close packed M layers with C or N occupying the octahedral site between them in an [MX]nM arrangement. Recently, two new families of ordered 2D double transition metal carbides MXenes were discovered, M′2M′′C2 and M′2M′′2C3 – where M′ and M′′ are two different early transition metals, such as Mo, Cr, Ta, Nb, V, and Ti. The M′ atoms only occupy the outer layers and the M′′ atoms fill the middle layers. In other words, M′ atomic layers sandwich the middle M′′–C layers. Using X-ray atomic pair distribution function (PDF) analysis on Mo2TiC2 and Mo2Ti2C3 MXenes, we present the first quantitative analysis of structures of these novel materials and experimentally confirm that Mo atoms are in the outer layers of the [MC]nM structures. The electronic properties of these Mo-containing MXenes are compared with their Ti3C2 counterparts, and are found to be no longer metallic-like conductors; instead the resistance increases mildly with decreasing temperatures. Density functional theory (DFT) calculations suggest that OH terminated Mo–Ti MXenes are semiconductors with narrow band gaps. Measurements of the temperature dependencies of conductivities and magnetoresistances have confirmed that Mo2TiC2Tx exhibits semiconductor-like transport behavior, while Ti3C2Tx is a metal. This finding opens new avenues for the control of the electronic and optical applications of MXenes and for exploring new applications, in which semiconducting properties are required.

  12. Synchronized droplet size measurements for Coal-Water-Slurry (CWS) diesel sprays of an electronically-controlled fuel injection system

    Science.gov (United States)

    Kihm, K. D.; Terracina, D. P.; Payne, S. E.; Caton, J. A.

    Experiments were completed to study intermittent coal-water slurry (CWS) fuel sprays injected from an electronically-controlled accumulator injector system. A laser diffraction particle analyzing (LDPA) technique was used to measure the spray diameters (Sauter mean diameter, SMD) assuming the Rosin-Rammler two parameter model. In order to ensure an accurate synchronization of the measurement with the intermittent sprays, a new synchronization technique was developed using the light extinction signal as a triggering source for the data taking initiation. This technique allowed measurement of SMD's near the spray tip where the light extinction was low and the data were free from the multiscattering bias. Coal-water slurry fuel with 50% coal loading in mass containing 5 (mu)m mass median diameter coal particulates was considered. Injection pressures ranging from 28 to 110 MPa, two different nozzle orifice diameters, 0.2 ad 0.4 mm, and four axial measurement locations from 60 to 120 mm from the nozzle orifice were studied. Measurements were made for pressurized (2.0 MPa in gauge) and for ambient chamber conditions. The spray SMD showed an increase with the distance of the axial measurement location and with the ambient gas density, and showed a decrease with increasing injection pressure. A correlation of the Sauter mean diameter with the injection conditions was determined. The results were also compared with previous SMD correlations that were available only for diesel fuel sprays.

  13. The electron edge of the low latitude boundary layer during accelerated flow events

    International Nuclear Information System (INIS)

    Gosling, J.T.; Thomsen, M.F.; Bame, S.J.; Onsager, T.G.; Russel, C.T.

    1990-01-01

    Magnetosheath plasma entering the Earth's magnetosphere to populate the low latitude boundary layer, LLBL, is often accelerated to speeds considerably greater than are observed in the adjacent magnetosheath. Measurements made during such accelerated flow events reveal separate electron and ion edges to the LLBL, with the electron edge being found earthward of the ion edge. Plasma electron velocity distributions observed at the earthward edge of the LLBL are often highly structured, exhibiting large asymmetries parallel and antiparallel, as well as perpendicular, to the local magnetic field. These features can consistently be interpreted as time-of-flight effects on recently reconnected field lines, and thus are strong evidence in support of the reconnection interpretation of accelerated plasma flow events

  14. Electron mobility in few-layer MoxW1-xS2

    International Nuclear Information System (INIS)

    Chandrasekar, Hareesh; Nath, Digbijoy N

    2015-01-01

    Heterostructures of two-dimensional (2D) layered materials are increasingly being explored for electronics in order to potentially extend conventional transistor scaling and to exploit new device designs and architectures. Alloys form a key underpinning of any heterostructure device technology and therefore an understanding of their electronic properties is essential. In this paper, we study the intrinsic electron mobility in few-layer Mo x W 1−x S 2 as limited by various scattering mechanisms. The room temperature, energy-dependent scattering times corresponding to polar longitudinal optical (LO) phonon, alloy and background impurity scattering mechanisms are estimated based on the Born approximation to Fermi’s golden rule. The contribution of individual scattering rates is analyzed as a function of 2D electron density as well as of alloy composition in Mo x W 1−x S 2 . While impurity scattering limits the mobility for low carrier densities (<2–4×10 12 cm −2 ), LO polar phonon scattering is the dominant mechanism for high electron densities. Alloy scattering is found to play a non-negligible role for 0.5 < x < 0.7 in Mo x W 1−x S 2 . The LO phonon-limited and impurity-limited mobilities show opposing trends with respect to alloy mole fractions. The understanding of electron mobility in Mo x W 1−x S 2 presented here is expected to enable the design and realization of heterostructures and devices based on alloys of MoS 2 and WS 2 . (paper)

  15. Enhancement of hole-injection and power efficiency of organic light emitting devices using an ultra-thin ZnO buffer layer

    International Nuclear Information System (INIS)

    Huang, H.-H.; Chu, S.-Y.; Kao, P.-C.; Chen, Y.-C.; Yang, M.-R.; Tseng, Z.-L.

    2009-01-01

    The advantages of using an anode buffer layer of ZnO on the electro-optical properties of organic light emitting devices (OLEDs) are reported. ZnO powders were thermal-evaporated and then treated with ultra-violet (UV) ozone exposure to make the ZnO layers. The turn-on voltage of OLEDs decreased from 4 V (4.2 cd/m 2 ) to 3 V (3.4 cd/m 2 ) and the power efficiency increased from 2.7 lm/W to 4.7 lm/W when a 1-nm-thick ZnO layer was inserted between indium tin oxide (ITO) anodes and α-naphthylphenylbiphenyl diamine (NPB) hole-transporting layers. X-ray and ultra-violet photoelectron spectroscopy (XPS and UPS) results revealed the formation of the ZnO layer and showed that the work function increased by 0.59 eV when the ZnO/ITO layer was treated by UV-ozone for 20 min. The surface of the ZnO/ITO film became smoother than that of bare ITO film after the UV-ozone treatment. Thus, the hole-injection energy barrier was lowered by inserting an ZnO buffer layer, resulting in a decrease of the turn-on voltage and an increase of the power efficiency of OLEDs.

  16. Beam-plasma interaction in case of injection of the electron beam to the symmetrically open plasma system

    International Nuclear Information System (INIS)

    Opanasenko, A.V.; Romanyuk, L.I.

    1992-01-01

    A beam-plasma interaction at the entrance of the symmetrically open plasma system with an electron beam injected through it is investigated. An ignition of the plasma-beam discharge on waves of upper hybrid dispersion branch of a magnetoactive plasma is found in the plasma penetrating into the vacuum contrary to the beam. It is shown that the beam-plasma discharge is localized in the inhomogeneous penetrating plasma in the zone where only these waves exist. Regularities of the beam-plasma discharge ignition and manifestation are described. It is determined that the electron beam crossing the discharge zone leads to the strong energy relaxation of the beam. It is shown possible to control the beam-plasma discharge ignition by changing the potential of the electron beam collector. (author)

  17. Measurement of runaway electron energy distribution function during high-Z gas injection into runaway electron plateaus in DIII-Da)

    Energy Technology Data Exchange (ETDEWEB)

    Hollmann, E. M. [University of California—San Diego, 9500 Gilman Dr., La Jolla, California 92093, USA; Parks, P. B. [General Atomics, PO Box 85608, San Diego, California 92186, USA; Commaux, N. [Oak Ridge National Laboratory, PO Box 2008, Oak Ridge, Tennessee 37831, USA; Eidietis, N. W. [General Atomics, PO Box 85608, San Diego, California 92186, USA; Moyer, R. A. [University of California—San Diego, 9500 Gilman Dr., La Jolla, California 92093, USA; Shiraki, D. [Oak Ridge National Laboratory, PO Box 2008, Oak Ridge, Tennessee 37831, USA; Austin, M. E. [Institute for Fusion Studies, University of Texas—Austin, 2100 San Jacinto Blvd, Austin, Texas 78712, USA; Lasnier, C. J. [Lawrence Livermore National Laboratory, 7000 East Ave, Livermore, California 94550, USA; Paz-Soldan, C. [General Atomics, PO Box 85608, San Diego, California 92186, USA; Rudakov, D. L. [University of California—San Diego, 9500 Gilman Dr., La Jolla, California 92093, USA

    2015-05-01

    The evolution of the runaway electron (RE) energy distribution function fεfε during massive gas injection into centered post-disruption runaway electron plateaus has been reconstructed. Overall, fεfε is found to be much more skewed toward low energy than predicted by avalanche theory. The reconstructions also indicate that the RE pitch angle θ is not uniform, but tends to be large at low energies and small θ ~0.1–0.2 at high energies. Overall power loss from the RE plateau appears to be dominated by collisions with background free and bound electrons, leading to line radiation. However, the drag on the plasma current appears to be dominated by collisions with impurity ions in most cases. Synchrotron emission appears not to be significant for overall RE energy dissipation but may be important for limiting the peak RE energy.

  18. Measurement of runaway electron energy distribution function during high-Z gas injection into runaway electron plateaus in DIII-D

    International Nuclear Information System (INIS)

    Hollmann, E. M.; Moyer, R. A.; Rudakov, D. L.; Parks, P. B.; Eidietis, N. W.; Paz-Soldan, C.; Commaux, N.; Shiraki, D.; Austin, M. E.; Lasnier, C. J.

    2015-01-01

    The evolution of the runaway electron (RE) energy distribution function f ε during massive gas injection into centered post-disruption runaway electron plateaus has been reconstructed. Overall, f ε is found to be much more skewed toward low energy than predicted by avalanche theory. The reconstructions also indicate that the RE pitch angle θ is not uniform, but tends to be large at low energies and small θ ∼ 0.1–0.2 at high energies. Overall power loss from the RE plateau appears to be dominated by collisions with background free and bound electrons, leading to line radiation. However, the drag on the plasma current appears to be dominated by collisions with impurity ions in most cases. Synchrotron emission appears not to be significant for overall RE energy dissipation but may be important for limiting the peak RE energy

  19. Electron and Hole Transport Layers: Their Use in Inverted Bulk Heterojunction Polymer Solar Cells

    Directory of Open Access Journals (Sweden)

    Sandro Lattante

    2014-03-01

    Full Text Available Bulk heterojunction polymer solar cells (BHJ PSCs are very promising organic-based devices for low-cost solar energy conversion, compatible with roll-to-roll or general printing methods for mass production. Nevertheless, to date, many issues should still be addressed, one of these being the poor stability in ambient conditions. One elegant way to overcome such an issue is the so-called “inverted” BHJ PSC, a device geometry in which the charge collection is reverted in comparison with the standard geometry device, i.e., the electrons are collected by the bottom electrode and the holes by the top electrode (in contact with air. This reverted geometry allows one to use a high work function top metal electrode, like silver or gold (thus avoiding its fast oxidation and degradation, and eliminates the need of a polymeric hole transport layer, typically of an acidic nature, on top of the transparent metal oxide bottom electrode. Moreover, this geometry is fully compatible with standard roll-to-roll manufacturing in air and is less demanding for a good post-production encapsulation process. To date, the external power conversion efficiencies of the inverted devices are generally comparable to their standard analogues, once both the electron transport layer and the hole transport layer are fully optimized for the particular device. Here, the most recent results on this particular optimization process will be reviewed, and a general outlook regarding the inverted BHJ PSC will be depicted.

  20. Sodium bromide electron-extraction layers for polymer bulk-heterojunction solar cells

    International Nuclear Information System (INIS)

    Gao, Zhi; Qu, Bo; Xiao, Lixin; Chen, Zhijian; Zhang, Lipei; Gong, Qihuang

    2014-01-01

    Inexpensive and non-toxic sodium bromide (NaBr) was introduced into polymer solar cells (PSCs) as the cathode buffer layer (CBL) and the electron extraction characteristics of the NaBr CBL were investigated in detail. The PSCs based on NaBr CBL with different thicknesses (i.e., 0 nm, 0.5 nm, 1 nm, and 1.5 nm) were prepared and studied. The optimal thickness of NaBr was 1 nm according to the photovoltaic data of PSCs. The open-circuit voltage (V oc ), short-circuit current density (J sc ), fill factor (FF), and power conversion efficiency (PCE) of the PSC with 1 nm NaBr were evaluated to be 0.58 V, 7.36 mA/cm 2 , 0.63, and 2.70%, respectively, which were comparable to those of the reference device with the commonly used LiF. The optimized photovoltaic performance of PSC with 1 nm NaBr was ascribed to the improved electron transport and extraction capability of 1 nm NaBr in PSCs. In addition, the NaBr CBL could prevent the diffusion of oxygen and water vapor into the active layer and prolong the lifetime of the devices to some extent. Therefore, NaBr layer could be considered as a promising non-toxic CBL for PSCs in future

  1. Ultrasonically spray coated silver layers from designed precursor inks for flexible electronics

    Science.gov (United States)

    Marchal, W.; Vandevenne, G.; D'Haen, J.; Almeida, A. Calmont de Andrade; Durand Sola, M. A., Jr.; van den Ham, E. J.; Drijkoningen, J.; Elen, K.; Deferme, W.; Van Bael, M. K.; Hardy, A.

    2017-05-01

    Integration of electronic circuit components onto flexible materials such as plastic foils, paper and textiles is a key challenge for the development of future smart applications. Therefore, conductive metal features need to be deposited on temperature sensitive substrates in a fast and straightforward way. The feasibility of these emerging (nano-) electronic technologies depends on the availability of well-designed deposition techniques and on novel functional metal inks. As ultrasonic spray coating (USSC) is one of the most promising techniques to meet the above requirements, innovative metal organic decomposition (MOD) inks are designed to deposit silver features on plastic foils. Various amine ligands were screened and their influence on the ink stability and the characteristics of the resulting metal depositions were evaluated to determine the optimal formulation. Eventually, silver layers with excellent performance in terms of conductivity (15% bulk silver conductivity), stability, morphology and adhesion could be obtained, while operating in a very low temperature window of 70 °C-120 °C. Moreover, the optimal deposition conditions were determined via an in-depth analysis of the ultrasonically sprayed silver layers. Applying these tailored MOD inks, the USSC technique enabled smooth, semi-transparent silver layers with a tunable thickness on large areas without time-consuming additional sintering steps after deposition. Therefore, this novel combination of nanoparticle-free Ag-inks and the USSC process holds promise for high throughput deposition of highly conductive silver features on heat sensitive substrates and even 3D objects.

  2. Particle dynamics and current-free double layers in an expanding, collisionless, two-electron-population plasma

    International Nuclear Information System (INIS)

    Hairapetian, G.; Stenzel, R.L.

    1991-01-01

    The expansion of a two-electron-population, collisionless plasma into vacuum is investigated experimentally. Detailed in situ measurements of plasma density, plasma potential, electric field, and particle distribution functions are performed. At the source, the electron population consists of a high-density, cold (kT e congruent 4 eV) Maxwellian, and a sparse, energetic ( (1)/(2) mv 2 e congruent 80 eV) tail. During the expansion of plasma, space-charge effects self-consistently produce an ambipolar electric field whose amplitude is controlled by the energy of tail electrons. The ambipolar electric field accelerates a small number (∼1%) of ions to streaming energies which exceed and scale linearly with the energy of tail electrons. As the expansion proceeds, the energetic tail electrons electrostatically trap the colder Maxwellian electrons and prevent them from reaching the expansion front. A potential double layer develops at the position of the cold electron front. Upstream of the double layer both electron populations exist; but downstream, only the tail electrons do. Hence, the expansion front is dominated by retarded tail electrons. Initially, the double layer propagates away from the source with a speed approximately equal to the ion sound speed in the cold electron population. The propagation speed is independent of the tail electron energy. At later times, the propagating double layer slows down and eventually stagnates. The final position and amplitude of the double layer are controlled by the relative densities of the two electron populations in the source. The steady-state double layer persists till the end of the discharge (Δt congruent 1 msec), much longer than the ion transit time through the device (t congruent 150 μsec)

  3. Electron-transporting layer doped with cesium azide for high-performance phosphorescent and tandem white organic light-emitting devices

    Science.gov (United States)

    Yu, Yaoyao; Chen, Xingming; Jin, Yu; Wu, Zhijun; Yu, Ye; Lin, Wenyan; Yang, Huishan

    2017-07-01

    Cesium azide was employed as an effective n-dopant in the electron-transporting layer (ETL) of organic light-emitting devices (OLEDs) owing to its low deposition temperature and high ambient stability. By doping cesium azide onto 4,7-diphenyl-1,10-phenanthroline, a green phosphorescent OLED having best efficiencies of 66.25 cd A-1, 81.22 lm W-1 and 18.82% was realized. Moreover, the efficiency roll-off from 1000 cd m-2 to 10 000 cd m-2 is only 12.9%, which is comparable with or even lower than that of devices utilizing the co-host system. Physical mechanisms for the improvement of device performance were studied in depth by analyzing the current density-voltage (J-V) characteristics of the electron-only devices. In particular, by comparing the J-V characteristics of the electron-only devices instead of applying the complicated ultraviolet photoelectron spectrometer measurements, we deduced the decrease in barrier height for electron injection at the ETL/cathode contact. Finally, an efficient tandem white OLED utilizing the n-doped layer in the charge generation unit (CGU) was constructed. As far as we know, this is the first report on the application of this CGU for fabricating tandem white OLEDs. The emissions of the tandem device are all in the warm white region from 1213 cd m-2 to 10870 cd m-2, as is beneficial to the lighting application.

  4. Molecular-structure control of ultrafast electron injection at cationic porphyrin-CdTe quantum dot interfaces

    KAUST Repository

    Aly, Shawkat Mohammede

    2015-03-05

    Charge transfer (CT) at donor (D)/acceptor (A) interfaces is central to the functioning of photovoltaic and light-emitting devices. Understanding and controlling this process on the molecular level has been proven to be crucial for optimizing the performance of many energy-challenge relevant devices. Here, we report the experimental observations of controlled on/off ultrafast electron transfer (ET) at cationic porphyrin-CdTe quantum dot (QD) interfaces using femto- and nanosecond broad-band transient absorption (TA) spectroscopy. The time-resolved data demonstrate how one can turn on/off the electron injection from porphyrin to the CdTe QDs. With careful control of the molecular structure, we are able to tune the electron injection at the porphyrin-CdTe QD interface from zero to very efficient and ultrafast. In addition, our data demonstrate that the ET process occurs within our temporal resolution of 120 fs, which is one of the fastest times recorded for organic photovoltaics. © 2015 American Chemical Society.

  5. Effect of different photoanode nanostructures on the initial charge separation and electron injection process in dye sensitized solar cells: A photophysical study with indoline dyes

    Energy Technology Data Exchange (ETDEWEB)

    Idígoras, Jesús [Nanostructured Solar Cells Group, Department of Physical, Chemical and Natural Systems, Universidad Pablo de Olavide, Ctra. Utrera, km 1, ES-41013 Seville (Spain); Sobuś, Jan [NanoBioMedical Centre, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań (Poland); Quantum Electronics Laboratory, Faculty of Physics, Adam Mickiewicz University in Poznań, Umultowska 85, 61-614 Poznań (Poland); Jancelewicz, Mariusz [NanoBioMedical Centre, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań (Poland); Azaceta, Eneko; Tena-Zaera, Ramon [Materials Division, IK4-CIDETEC, Parque Tecnológico de San Sebastián, Paseo Miramón 196, Donostia-San Sebastián, 20009 (Spain); Anta, Juan A. [Nanostructured Solar Cells Group, Department of Physical, Chemical and Natural Systems, Universidad Pablo de Olavide, Ctra. Utrera, km 1, ES-41013 Seville (Spain); Ziółek, Marcin, E-mail: marziol@amu.edu.pl [Quantum Electronics Laboratory, Faculty of Physics, Adam Mickiewicz University in Poznań, Umultowska 85, 61-614 Poznań (Poland)

    2016-02-15

    Ultrafast and fast charge separation processes were investigated for complete cells based on several ZnO-based photoanode nanostructures and standard TiO{sub 2} nanoparticle layers sensitized with the indoline dye coded D358. Different ZnO morphologies (nanoparticles, nanowires, mesoporous), synthesis methods (hydrothermal, gas-phase, electrodeposition in aqueous media and ionic liquid media) and coatings (ZnO–ZnO core–shell, ZnO–TiO{sub 2} core–shell) were measured by transient absorption techniques in the time scale from 100 fs to 100 μs and in the visible and near-infrared spectral range. All of ZnO cells show worse electron injection yields with respect to those with standard TiO{sub 2} material. Lower refractive index of ZnO than that of TiO{sub 2} is suggested to be an additional factor, not considered so far, that can decrease the performance of ZnO-based solar cells. Evidence of the participation of the excited charge transfer state of the dye in the charge separation process is provided here. The lifetime of this state in fully working devices extends from several ps to several tens of ps, which is much longer than the typically postulated electron injection times in all-organic dye-sensitized solar cells. The results here provided, comprising a wide variety of morphologies and preparation methods, point to the universality of the poor performance of ZnO as photoanode material with respect to standard TiO{sub 2}. - Highlights: • Wide variety of morphologies and preparation methods has been checked for ZnO cells. • All ZnO cells work worse than TiO{sub 2} ones. • Effective refractive index might be an additional factor in solar cell performance. • Excited charge transfer state of indoline dyes participates in the charge separation.

  6. Misfit Strain in Superlattices Controlling the Electron-Lattice Interaction via Micro strain in Active Layers

    International Nuclear Information System (INIS)

    Poccia, N.; Ricci, A.; Bianconi, N.

    2010-01-01

    High-temperature superconductivity (HTS) emerges in quite different electronic materials: cuprates, diborides, and iron-pnictide superconductors. Looking for unity in the diversity we find in all these materials a common lattice architecture: they are practical realizations of heterostructures at atomic limit made of superlattices of metallic active layers intercalated by spacers as predicted in 1993 by one of us. The multilayer architecture is the key feature for the presence of electronic topological transitions where the Fermi surface of one of the subbands changes dimensionality. The superlattice misfit strain η between the active and spacer layers is shown to be a key variable to drive the system to the highest critical temperature Tc that occurs at a particular point of the 3D phase diagram Tc(θ, η) where d is the charge transfer or doping. The plots of Tc as a function of misfit strain at constant charge transfer in cuprates show a first-order quantum critical phase transition where an itinerant striped magnetic phase competes with superconductivity in the proximity of a structural phase transition, that is, associated with an electronic topological transition. The shape resonances in these multi gap superconductors is associated with the maximum Tc.

  7. Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics.

    Science.gov (United States)

    Cheng, Rui; Jiang, Shan; Chen, Yu; Liu, Yuan; Weiss, Nathan; Cheng, Hung-Chieh; Wu, Hao; Huang, Yu; Duan, Xiangfeng

    2014-10-08

    Two-dimensional layered materials, such as molybdenum disulfide, are emerging as an exciting material system for future electronics due to their unique electronic properties and atomically thin geometry. Here we report a systematic investigation of MoS2 transistors with optimized contact and device geometry, to achieve self-aligned devices with performance including an intrinsic gain over 30, an intrinsic cut-off frequency fT up to 42 GHz and a maximum oscillation frequency fMAX up to 50 GHz, exceeding the reported values for MoS2 transistors to date (fT~0.9 GHz, fMAX~1 GHz). Our results show that logic inverters or radio frequency amplifiers can be formed by integrating multiple MoS2 transistors on quartz or flexible substrates with voltage gain in the gigahertz regime. This study demonstrates the potential of two-dimensional layered semiconductors for high-speed flexible electronics.

  8. Numerical simulation of electronic properties of coupled quantum dots on wetting layers

    International Nuclear Information System (INIS)

    Betcke, M M; Voss, H

    2008-01-01

    Self-assembled quantum dots are grown on wetting layers and frequently in an array-like assembly of many similar but not exactly equal dots. Nevertheless, most simulations disregard these structural conditions and restrict themselves to simulating a pure single quantum dot. For reasons of numerical efficiency we advocate the effective one-band Hamiltonian with energy- and position-dependent effective mass approximation and a finite height hard-wall 3D confinement potential for computation of the energy levels of the electrons in the conduction band. Within this model we investigate the geometrical effects mentioned above on the electronic structure of a pyramidal InAs quantum dot embedded in a GaAs matrix. We find that the presence of a wetting layer may affect the electronic structure noticeably. Furthermore, we establish that, in spite of the large bandgap of the InAs/GaAs heterostructure, if the dots in a vertically aligned array are sufficiently close stacked there is considerable interaction between their eigenfunctions. Moreover, the eigenfunctions of such an array are quite sensitive to certain structural perturbations

  9. Electron-temperature-gradient-induced instability in tokamak scrape-off layers

    International Nuclear Information System (INIS)

    Berk, H.L.; Ryutov, D.D.; Tsidulko, Y.A.; Xu, X.Q.

    1992-08-01

    An electron temperature instability driven by the Kunkel-Guillory sheath impedance, has been applied to the scrape-off layer of tokamaks. The formalism has been generalized to more fully account for parallel wavelength dynamics, to differentiate between electromagnetic and electrostatic perturbations and to account for particle recycling effects. It is conjectured that this conducting wall instability leads to edge fluctuations in tokamaks that produce scrape-off widths of many ion Larmor radii ≅10. The predicted instability characteristics correlate somewhat with DIII-D edge fluctuation data, and the scrape-off layer width in the DIII-D experiment agrees with theoretical estimates that can be derived from mixing lenght theory

  10. Dimensional crossover of electron weak localization in ZnO/TiO{sub x} stacked layers grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Saha, D., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Misra, P., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Joshi, M. P.; Kukreja, L. M. [Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India); Bhartiya, S. [Laser Materials Development & Devices Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India); Gupta, M. [UGC-DAE Consortium for Scientific Research, Indore 452 017 (India)

    2016-01-25

    We report on the dimensional crossover of electron weak localization in ZnO/TiO{sub x} stacked layers having well-defined and spatially-localized Ti dopant profiles along film thickness. These films were grown by in situ incorporation of sub-monolayer TiO{sub x} on the growing ZnO film surface and subsequent overgrowth of thin conducting ZnO spacer layer using atomic layer deposition. Film thickness was varied in the range of ∼6–65 nm by vertically stacking different numbers (n = 1–7) of ZnO/TiO{sub x} layers of nearly identical dopant-profiles. The evolution of zero-field sheet resistance (R{sub ◻}) versus temperature with decreasing film thickness showed a metal to insulator transition. On the metallic side of the metal-insulator transition, R{sub ◻}(T) and magnetoresistance data were found to be well corroborated with the theoretical framework of electron weak localization in the diffusive transport regime. The temperature dependence of both R{sub ◻} and inelastic scattering length provided strong evidence for a smooth crossover from 2D to 3D weak localization behaviour. Results of this study provide deeper insight into the electron transport in low-dimensional n-type ZnO/TiO{sub x} stacked layers which have potential applications in the field of transparent oxide electronics.

  11. Progress toward magnetic confinement of a positron-electron plasma: nearly 100% positron injection efficiency into a dipole trap

    Science.gov (United States)

    Stoneking, Matthew

    2017-10-01

    The hydrogen atom provides the simplest system and in some cases the most precise one for comparing theory and experiment in atomics physics. The field of plasma physics lacks an experimental counterpart, but there are efforts underway to produce a magnetically confined positron-electron plasma that promises to represent the simplest plasma system. The mass symmetry of positron-electron plasma makes it particularly tractable from a theoretical standpoint and many theory papers have been published predicting modified wave and stability properties in these systems. Our approach is to utilize techniques from the non-neutral plasma community to trap and accumulate electrons and positrons prior to mixing in a magnetic trap with good confinement properties. Ultimately we aim to use a levitated superconducting dipole configuration fueled by positrons from a reactor-based positron source and buffer-gas trap. To date we have conducted experiments to characterize and optimize the positron beam and test strategies for injecting positrons into the field of a supported permanent magnet by use of ExB drifts and tailored static and dynamic potentials applied to boundary electrodes and to the magnet itself. Nearly 100% injection efficiency has been achieved under certain conditions and some fraction of the injected positrons are confined for as long as 400 ms. These results are promising for the next step in the project which is to use an inductively energized high Tc superconducting coil to produce the dipole field, initially in a supported configuration, but ultimately levitated using feedback stabilization. Work performed with the support of the German Research Foundation (DFG), JSPS KAKENHI, NIFS Collaboration Research Program, and the UCSD Foundation.

  12. Electron spectroscopy of the interface carbon layer formation on the cleavage surfaces of the layered semiconductor In4Se3 crystals

    International Nuclear Information System (INIS)

    Galiy, P.V.; Musyanovych, A.V.; Nenchuk, T.M.

    2005-01-01

    The results of the quantitative X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) of the interface carbon layer formation on the cleavage surfaces of the layered semiconductor In 4 Se 3 crystals are presented. The carbon coating formation occurs as the result of interaction of the air and residual gases atmosphere in ultra high vacuum (UHV) Auger spectrometer chamber with atomic clean interlayer cleavage surfaces of the crystals. The kinetics and peculiarities of interfacial carbon layer formation on the cleavage surfaces of the crystals, elemental and phase composition of the interface have been studied by quantitative XPS, AES and mass-spectroscopy

  13. Assessment of doses caused by electrons in thin layers of tissue-equivalent materials, using MCNP.

    Science.gov (United States)

    Heide, Bernd

    2013-10-01

    Absorbed doses caused by electron irradiation were calculated with Monte Carlo N-Particle transport code (MCNP) for thin layers of tissue-equivalent materials. The layers were so thin that the calculation of energy deposition was on the border of the scope of MCNP. Therefore, in this article application of three different methods of calculation of energy deposition is discussed. This was done by means of two scenarios: in the first one, electrons were emitted from the centre of a sphere of water and also recorded in that sphere; and in the second, an irradiation with the PTB Secondary Standard BSS2 was modelled, where electrons were emitted from an (90)Sr/(90)Y area source and recorded inside a cuboid phantom made of tissue-equivalent material. The speed and accuracy of the different methods were of interest. While a significant difference in accuracy was visible for one method in the first scenario, the difference in accuracy of the three methods was insignificant for the second one. Considerable differences in speed were found for both scenarios. In order to demonstrate the need for calculating the dose in thin small zones, a third scenario was constructed and simulated as well. The third scenario was nearly equal to the second one, but a pike of lead was assumed to be inside the phantom in addition. A dose enhancement (caused by the pike of lead) of ∼113 % was recorded for a thin hollow cylinder at a depth of 0.007 cm, which the basal-skin layer is referred to in particular. Dose enhancements between 68 and 88 % were found for a slab with a radius of 0.09 cm for all depths. All dose enhancements were hardly noticeable for a slab with a cross-sectional area of 1 cm(2), which is usually applied to operational radiation protection.

  14. Adsorption and electronic properties of pentacene on thin dielectric decoupling layers

    Directory of Open Access Journals (Sweden)

    Sebastian Koslowski

    2017-07-01

    Full Text Available With the increasing use of thin dielectric decoupling layers to study the electronic properties of organic molecules on metal surfaces, comparative studies are needed in order to generalize findings and formulate practical rules. In this paper we study the adsorption and electronic properties of pentacene deposited onto h-BN/Rh(111 and compare them with those of pentacene deposited onto KCl on various metal surfaces. When deposited onto KCl, the HOMO and LUMO energies of the pentacene molecules scale with the work functions of the combined KCl/metal surface. The magnitude of the variation between the respective KCl/metal systems indicates the degree of interaction of the frontier orbitals with the underlying metal. The results confirm that the so-called IDIS model developed by Willenbockel et al. applies not only to molecular layers on bare metal surfaces, but also to individual molecules on thin electronically decoupling layers. Depositing pentacene onto h-BN/Rh(111 results in significantly different adsorption characteristics, due to the topographic corrugation of the surface as well as the lateral electric fields it presents. These properties are reflected in the divergence from the aforementioned trend for the orbital energies of pentacene deposited onto h-BN/Rh(111, as well as in the different adsorption geometry. Thus, the highly desirable capacity of h-BN to trap molecules comes at the price of enhanced metal–molecule interaction, which decreases the HOMO–LUMO gap of the molecules. In spite of the enhanced interaction, the molecular orbitals are evident in scanning tunnelling spectroscopy (STS and their shapes can be resolved by spectroscopic mapping.

  15. Adsorption and electronic properties of pentacene on thin dielectric decoupling layers.

    Science.gov (United States)

    Koslowski, Sebastian; Rosenblatt, Daniel; Kabakchiev, Alexander; Kuhnke, Klaus; Kern, Klaus; Schlickum, Uta

    2017-01-01

    With the increasing use of thin dielectric decoupling layers to study the electronic properties of organic molecules on metal surfaces, comparative studies are needed in order to generalize findings and formulate practical rules. In this paper we study the adsorption and electronic properties of pentacene deposited onto h-BN/Rh(111) and compare them with those of pentacene deposited onto KCl on various metal surfaces. When deposited onto KCl, the HOMO and LUMO energies of the pentacene molecules scale with the work functions of the combined KCl/metal surface. The magnitude of the variation between the respective KCl/metal systems indicates the degree of interaction of the frontier orbitals with the underlying metal. The results confirm that the so-called IDIS model developed by Willenbockel et al. applies not only to molecular layers on bare metal surfaces, but also to individual molecules on thin electronically decoupling layers. Depositing pentacene onto h-BN/Rh(111) results in significantly different adsorption characteristics, due to the topographic corrugation of the surface as well as the lateral electric fields it presents. These properties are reflected in the divergence from the aforementioned trend for the orbital energies of pentacene deposited onto h-BN/Rh(111), as well as in the different adsorption geometry. Thus, the highly desirable capacity of h-BN to trap molecules comes at the price of enhanced metal-molecule interaction, which decreases the HOMO-LUMO gap of the molecules. In spite of the enhanced interaction, the molecular orbitals are evident in scanning tunnelling spectroscopy (STS) and their shapes can be resolved by spectroscopic mapping.

  16. Post-ion beam induced degradation of copper layers in transmission electron microscopy specimens

    Science.gov (United States)

    Seidel, F.; Richard, O.; Bender, H.; Vandervorst, W.

    2015-11-01

    Copper containing transmission electron microscopy (TEM) specimens frequently show corrosion after focused ion beam (FIB) preparation. This paper reveals that the corrosion product is a Cu-S phase growing over the specimen surface. The layer is identified by energy-dispersive x-ray spectroscopy, and lattice spacing indexing of power spectra patterns. The corrosion process is further studied by TEM on cone-shaped specimens, which are intentionally stored after FIB preparation with S flakes for short time. Furthermore, a protective method against corrosion is developed by varying the time in the FIB vacuum and the duration of a subsequent plasma cleaning.

  17. Layer- and lateral-resolved magnetization studies using photoemission electron microscopy

    International Nuclear Information System (INIS)

    Wei, D.H.; Hsu, Y.J.; Lin, C.-C.; Lai, C.-H.; Ou, J.Y.; Wu, J.C.

    2004-01-01

    The magnetic circular dichroism in X-ray absorption is employed to study the element-specific magnetization in a TbFe/Co bilayer system and patterned Ni 80 Fe 20 film. Taking advantage of the energy tunability as well as the penetration power of synchrotron radiation, the magnetization directions of Co and Fe deposited in different layers were examined as a function of Co film thickness. For patterned films, the photoemission electron microscope reveals a clear correlation between the magnetic configurations and geometries of the patterns

  18. Correlation of electronic and magnetic properties of thin polymer layers with cobalt nanoparticles

    DEFF Research Database (Denmark)

    Kharchenko, A.; Lukashevich, M.; Popok, Vladimir

    2013-01-01

    Nanoparticles (NPs) of cobalt are synthesized in shallow layers of polyimide using 40 keV implantation of Co+ ions with a few different fluences at various ion current densities. Nucleation of individual NPs at low fluencies and their percolation at high fluencies are crucial processes governing...... of the magnetoresistance on the applied magnetic field allows to suggest spin-dependent domain wall scattering affecting the electron transport. The samples implanted with low fluencies demonstrate superparamagnetic behavior down to very low blocking temperatures. While for high fluence (1.25x1017 cm-2) the transition...

  19. Growth and electronic structure of single-layered transition metal dichalcogenides

    DEFF Research Database (Denmark)

    Dendzik, Maciej

    2016-01-01

    only a weak interaction between SL MoS2 and graphene, which leads to a quasi-freestanding band structure, but also to the coexistence of multiple rotational domains. Measurements of SL WS2 on Ag(111), on the other hand, reveals formation of interesting in-gap states which make WS2 metallic. Low...... different from graphene’s. For example, semiconducting TMDCs undergo an indirectdirect band gap transition when thinned to a single layer (SL); this results in greatly enhanced photoluminescence, making those materials attractive for applications in optoelectronics. Furthermore, metallic TMDCs can host......-quality SL TMDCs. We demonstrate the synthesis of SL MoS2, WS2 and TaS2 on Au(111), Ag(111) and graphene on SiC. The morphology and crystal structure of the synthesized materials is characterized by scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED). The electronic structure of SL...

  20. Research Update: The electronic structure of hybrid perovskite layers and their energetic alignment in devices

    Directory of Open Access Journals (Sweden)

    Selina Olthof

    2016-09-01

    Full Text Available In recent years, the interest in hybrid organic–inorganic perovskites has increased at a rapid pace due to their tremendous success in the field of thin film solar cells. This area closely ties together fundamental solid state research and device application, as it is necessary to understand the basic material properties to optimize the performances and open up new areas of application. In this regard, the energy levels and their respective alignment with adjacent charge transport layers play a crucial role. Currently, we are lacking a detailed understanding about the electronic structure and are struggling to understand what influences the alignment, how it varies, or how it can be intentionally modified. This research update aims at giving an overview over recent results regarding measurements of the electronic structure of hybrid perovskites using photoelectron spectroscopy to summarize the present status.

  1. Layer-dependent electronic properties of phosphorene-like materials and phosphorene-based van der Waals heterostructures.

    Science.gov (United States)

    Huang, Y C; Chen, X; Wang, C; Peng, L; Qian, Q; Wang, S F

    2017-06-29

    Black phosphorus is a layered semiconducting allotrope of phosphorus with high carrier mobility. Its monolayer form, phosphorene, is an extremely fashionable two-dimensional material which has promising potential in transistors, optoelectronics and electronics. However, phosphorene-like analogues, especially phosphorene-based heterostructures and their layer-controlled electronic properties, are rarely systematically investigated. In this paper, the layer-dependent structural and electronic properties of phosphorene-like materials, i.e., mono- and few-layer MXs (M = Sn, Ge; X = S, Se), are first studied via first-principles calculations, and then the band edge position of these MXs as well as mono- and few-layer phosphorene are aligned. It is revealed that van der Waals heterostructures with a Moiré superstructure formed by mutual coupling among MXs and among MXs and few-layer phosphorene are able to show type-I or type-II characteristics and a I-II or II-I transition can be induced by adjusting the number of layers. Our work is expected to yield a new family of phosphorene-based semiconductor heterostructures with tunable electronic properties through altering the number of layers of the composite.

  2. Atomic layer deposition on polymer fibers and fabrics for multifunctional and electronic textiles

    Energy Technology Data Exchange (ETDEWEB)

    Brozena, Alexandra H.; Oldham, Christopher J.; Parsons, Gregory N., E-mail: gnp@ncsu.edu [Department of Chemical and Biomolecular Engineering, North Carolina State University, Raleigh, North Carolina 27695-7905 (United States)

    2016-01-15

    Textile materials, including woven cotton, polymer knit fabrics, and synthetic nonwoven fiber mats, are being explored as low-cost, flexible, and light-weight platforms for wearable electronic sensing, communication, energy generation, and storage. The natural porosity and high surface area in textiles is also useful for new applications in environmental protection, chemical decontamination, pharmaceutical and chemical manufacturing, catalytic support, tissue regeneration, and others. These applications raise opportunities for new chemistries, chemical processes, biological coupling, and nanodevice systems that can readily combine with textile manufacturing to create new “multifunctional” fabrics. Atomic layer deposition (ALD) has a unique ability to form highly uniform and conformal thin films at low processing temperature on nonuniform high aspect ratio surfaces. Recent research shows how ALD can coat, modify, and otherwise improve polymer fibers and textiles by incorporating new materials for viable electronic and other multifunctional capabilities. This article provides a current overview of the understanding of ALD coating and modification of textiles, including current capabilities and outstanding problems, with the goal of providing a starting point for further research and advances in this field. After a brief introduction to textile materials and current textile treatment methods, the authors discuss unique properties of ALD-coated textiles, followed by a review of recent electronic and multifunctional textiles that use ALD coatings either as direct functional components or as critical nucleation layers for active materials integration. The article concludes with possible future directions for ALD on textiles, including the challenges in materials, manufacturing, and manufacturing integration that must be overcome for ALD to reach its full potential in electronic and other emerging multifunctional textile systems.

  3. Colliding pulse injection experiments in non-collinear geometry for controlled laser plasma wakefield acceleration of electrons

    International Nuclear Information System (INIS)

    Toth, Carl B.; Esarey, Eric H.; Geddes, Cameron G.R.; Leemans, Wim P.; Nakamura, Kei; Panasenko, Dmitriy; Schroeder, Carl B.; Bruhwiler, D.; Cary, J.R.

    2007-01-01

    An optical injection scheme for a laser-plasma based accelerator which employs a non-collinear counter-propagating laser beam to push background electrons in the focusing and acceleration phase via ponderomotive beat with the trailing part of the wakefield driver pulse is discussed. Preliminary experiments were performed using a drive beam of a 0 = 2.6 and colliding beam of a 1 = 0.8 both focused on the middle of a 200 mu m slit jet backed with 20 bar, which provided ∼ 260 mu m long gas plume. The enhancement in the total charge by the colliding pulse was observed with sharp dependence on the delay time of the colliding beam. Enhancement of the neutron yield was also measured, which suggests a generation of electrons above 10 MeV

  4. Fast electron flux driven by lower hybrid wave in the scrape-off layer

    International Nuclear Information System (INIS)

    Li, Y. L.; Xu, G. S.; Wang, H. Q.; Wan, B. N.; Chen, R.; Wang, L.; Gan, K. F.; Yang, J. H.; Zhang, X. J.; Liu, S. C.; Li, M. H.; Ding, S.; Yan, N.; Zhang, W.; Hu, G. H.; Liu, Y. L.; Shao, L. M.; Li, J.; Chen, L.; Zhao, N.

    2015-01-01

    The fast electron flux driven by Lower Hybrid Wave (LHW) in the scrape-off layer (SOL) in EAST is analyzed both theoretically and experimentally. The five bright belts flowing along the magnetic field lines in the SOL and hot spots at LHW guard limiters observed by charge coupled device and infrared cameras are attributed to the fast electron flux, which is directly measured by retarding field analyzers (RFA). The current carried by the fast electron flux, ranging from 400 to 6000 A/m 2 and in the direction opposite to the plasma current, is scanned along the radial direction from the limiter surface to the position about 25 mm beyond the limiter. The measured fast electron flux is attributed to the high parallel wave refractive index n || components of LHW. According to the antenna structure and the LHW power absorbed by plasma, a broad parallel electric field spectrum of incident wave from the antennas is estimated. The radial distribution of LHW-driven current density is analyzed in SOL based on Landau damping of the LHW. The analytical results support the RFA measurements, showing a certain level of consistency. In addition, the deposition profile of the LHW power density in SOL is also calculated utilizing this simple model. This study provides some fundamental insight into the heating and current drive effects induced by LHW in SOL, and should also help to interpret the observations and related numerical analyses of the behaviors of bright belts and hot spots induced by LHW

  5. Nanometer-resolution electron microscopy through micrometers-thick water layers

    Energy Technology Data Exchange (ETDEWEB)

    Jonge, Niels de, E-mail: niels.de.jonge@vanderbilt.edu [Vanderbilt University Medical Center, Department of Molecular Physiology and Biophysics, Nashville, TN 37232-0615 (United States); Oak Ridge National Laboratory, Materials Science and Technology Division, Oak Ridge, TN 37831-6064 (United States); Poirier-Demers, Nicolas; Demers, Hendrix [Universite de Sherbrooke, Electrical and Computer Engineering, Sherbrooke, Quebec J1K 2R1 (Canada); Peckys, Diana B. [Oak Ridge National Laboratory, Materials Science and Technology Division, Oak Ridge, TN 37831-6064 (United States); University of Tennessee, Center for Environmental Biotechnology, Knoxville, TN 37996-1605 (United States); Drouin, Dominique [Universite de Sherbrooke, Electrical and Computer Engineering, Sherbrooke, Quebec J1K 2R1 (Canada)

    2010-08-15

    Scanning transmission electron microscopy (STEM) was used to image gold nanoparticles on top of and below saline water layers of several micrometers thickness. The smallest gold nanoparticles studied had diameters of 1.4 nm and were visible for a liquid thickness of up to 3.3 {mu}m. The imaging of gold nanoparticles below several micrometers of liquid was limited by broadening of the electron probe caused by scattering of the electron beam in the liquid. The experimental data corresponded to analytical models of the resolution and of the electron probe broadening as function of the liquid thickness. The results were also compared with Monte Carlo simulations of the STEM imaging on modeled specimens of similar geometry and composition as used for the experiments. Applications of STEM imaging in liquid can be found in cell biology, e.g., to study tagged proteins in whole eukaryotic cells in liquid and in materials science to study the interaction of solid:liquid interfaces at the nanoscale.

  6. Density and temperature profile modifications with electron cyclotron power injection in quiescent double barrier discharges on DIII-D

    International Nuclear Information System (INIS)

    Casper, T A; Burrell, K H; Doyle, E J; Gohil, P; Lasnier, C J; Leonard, A W; Moller, J M; Osborne, T H; Snyder, P B; Thomas, D M; Weiland, J; West, W P

    2006-01-01

    Quiescent double barrier (QDB) conditions often form when an internal transport barrier is created with high-power neutral-beam injection into a quiescent H-mode (QH) plasma. These QH-modes offer an attractive, high-performance operating scenario for burning plasma experiments due to their quasi-stationarity and lack of edge localized modes. Our initial experiments and modelling using ECH/ECCD in QDB shots were designed to control the current profile and, indeed, we have observed a strong dependence on the q-profile when EC-power is used inside the core transport barrier region. While strong electron heating is observed with EC power injection, we also observe a drop in the other core parameters, namely ion temperature and rotation, electron density and impurity concentration. At onset and termination of the EC pulse, dynamically changing conditions are induced that provide a rapid evolution of T e /T i profiles accessible with 0.3 e /T i ) axis e /T i ratio as the ion temperature and density profiles flatten with this change in transport. The change in transport is consistent with a destabilization of ITG turbulence as inferred from the reduction of the stability threshold due to the change in T e /T i

  7. Precipitation regions on the Earth of high energy electrons, injected by a point source moving along a circular Earth orbit

    Science.gov (United States)

    Kolesnikov, E. K.; Klyushnikov, G. N.

    2018-05-01

    In the paper we continue the study of precipitation regions of high-energy charged particles, carried out by the authors since 2002. In contrast to previous papers, where a stationary source of electrons was considered, it is assumed that the source moves along a low circular near-earth orbit with a constant velocity. The orbit position is set by the inclination angle of the orbital plane to the equatorial plane and the longitude of the ascending node. The total number of injected electrons is determined by the source strength and the number of complete revolutions that the source makes along the circumference. Construction of precipitation regions is produced using the computational algorithm based on solving of the system of ordinary differential equations. The features of the precipitation regions structure for the dipole approximation of the geomagnetic field and the symmetrical arrangement of the orbit relative to the equator are noted. The dependencies of the precipitation regions on different orbital parametres such as the incline angle, the ascending node position and kinetic energy of injected particles have been considered.

  8. Engineering of electronic properties of single layer graphene by swift heavy ion irradiation

    Science.gov (United States)

    Kumar, Sunil; Kumar, Ashish; Tripathi, Ambuj; Tyagi, Chetna; Avasthi, D. K.

    2018-04-01

    In this work, swift heavy ion irradiation induced effects on the electrical properties of single layer graphene are reported. The modulation in minimum conductivity point in graphene with in-situ electrical measurement during ion irradiation was studied. It is found that the resistance of graphene layer decreases at lower fluences up to 3 × 1011 ions/cm2, which is accompanied by the five-fold increase in electron and hole mobilities. The ion irradiation induced increase in electron and hole mobilities at lower fluence up to 1 × 1011 ions/cm2 is verified by separate Hall measurements on another irradiated graphene sample at the selected fluence. In contrast to the adverse effects of irradiation on the electrical properties of materials, we have found improvement in electrical mobility after irradiation. The increment in mobility is explained by considering the defect annealing in graphene after irradiation at a lower fluence regime. The modification in carrier density after irradiation is also observed. Based on findings of the present work, we suggest ion beam irradiation as a useful tool for tuning of the electrical properties of graphene.

  9. Plasmonically sensitized metal-oxide electron extraction layers for organic solar cells.

    Science.gov (United States)

    Trost, S; Becker, T; Zilberberg, K; Behrendt, A; Polywka, A; Heiderhoff, R; Görrn, P; Riedl, T

    2015-01-16

    ZnO and TiOx are commonly used as electron extraction layers (EELs) in organic solar cells (OSCs). A general phenomenon of OSCs incorporating these metal-oxides is the requirement to illuminate the devices with UV light in order to improve device characteristics. This may cause severe problems if UV to VIS down-conversion is applied or if the UV spectral range (λ work, silver nanoparticles (AgNP) are used to plasmonically sensitize metal-oxide based EELs in the vicinity (1-20 nm) of the metal-oxide/organic interface. We evidence that plasmonically sensitized metal-oxide layers facilitate electron extraction and afford well-behaved highly efficient OSCs, even without the typical requirement of UV exposure. It is shown that in the plasmonically sensitized metal-oxides the illumination with visible light lowers the WF due to desorption of previously ionosorbed oxygen, in analogy to the process found in neat metal oxides upon UV exposure, only. As underlying mechanism the transfer of hot holes from the metal to the oxide upon illumination with hν < Eg is verified. The general applicability of this concept to most common metal-oxides (e.g. TiOx and ZnO) in combination with different photoactive organic materials is demonstrated.

  10. Electronic properties of moire superlattice bands in layered two dimensional materials

    Science.gov (United States)

    Jung, Jeil

    2014-03-01

    When atomically thin two-dimensional materials are layered they often form incommensurate non-crystalline structures that exhibit long period moiré patterns when examined by scanning probes. In this talk, I will present a theoretical method which can be used to derive an effective Hamiltonian for these twisted van der Waals heterostructures using input from ab initio calculations performed on short-period crystalline structures. I will argue that the effective Hamiltonian can quantitatively describe the electronic properties of these layered systems for arbitrary twist angle and lattice constants. Applying this method to the important cases of graphene on graphene and graphene on hexagonal-boron nitride, I will present a series of experimentally observable quantities that can be extracted from their electronic structure, including their density of states and local density of states as a function of twist angle, and compare with available experiments. Work done in collaboration with Allan MacDonald, Shaffique Adam, Arnaud Raoux, Zhenhua Qiao, and Ashley DaSilva; and supported by the Singapore National Research Foundation Fellowship NRF-NRFF2012-01.

  11. Bulk and interface quantum states of electrons in multi-layer heterostructures with topological materials

    Science.gov (United States)

    Nikolic, Aleksandar; Zhang, Kexin; Barnes, C. H. W.

    2018-06-01

    In this article we describe the bulk and interface quantum states of electrons in multi-layer heterostructures in one dimension, consisting of topological insulators (TIs) and topologically trivial materials. We use and extend an effective four-band continuum Hamiltonian by introducing position dependence to the eight material parameters of the Hamiltonian. We are able to demonstrate complete conduction-valence band mixing in the interface states. We find evidence for topological features of bulk states of multi-layer TI heterostructures, as well as demonstrating both complete and incomplete conduction-valence band inversion at different bulk state energies. We show that the linear k z terms in the low-energy Hamiltonian, arising from overlap of p z orbitals between different atomic layers in the case of chalcogenides, control the amount of tunneling from TIs to trivial insulators. Finally, we show that the same linear k z terms in the low-energy Hamiltonian affect the material’s ability to form the localised interface state, and we demonstrate that due to this effect the spin and probability density localisation in a thin film of Sb2Te3 is incomplete. We show that changing the parameter that controls the magnitude of the overlap of p z orbitals affects the transport characteristics of the topologically conducting states, with incomplete topological state localisation resulting in increased backscattering.

  12. Amorphous indium-gallium-zinc-oxide as electron transport layer in organic photodetectors

    International Nuclear Information System (INIS)

    Arora, H.; Malinowski, P. E.; Chasin, A.; Cheyns, D.; Steudel, S.; Schols, S.; Heremans, P.

    2015-01-01

    Amorphous indium-gallium-zinc-oxide (a-IGZO) is demonstrated as an electron transport layer (ETL) in a high-performance organic photodetector (OPD). Dark current in the range of 10 nA/cm 2 at a bias voltage of −2 V and a high photoresponse in the visible spectrum were obtained in inverted OPDs with poly(3-hexylthiophene) and phenyl-C 61 -butyric acid methyl ester active layer. The best results were obtained for the optimum a-IGZO thickness of 7.5 nm with specific detectivity of 3 × 10 12 Jones at the wavelength of 550 nm. The performance of the best OPD devices using a-IGZO was shown to be comparable to state-of-the-art devices based on TiO x as ETL, with higher rectification achieved in reverse bias. Yield and reproducibility were also enhanced with a-IGZO, facilitating fabrication of large area OPDs. Furthermore, easier integration with IGZO-based readout backplanes can be envisioned, where the channel material can be used as photodiode buffer layer after additional treatment

  13. Amorphous indium-gallium-zinc-oxide as electron transport layer in organic photodetectors

    Energy Technology Data Exchange (ETDEWEB)

    Arora, H. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Phelma–Grenoble INP, 3 Parvis Louis Néel, 38016 Grenoble Cedex 01 (France); Malinowski, P. E., E-mail: pawel.malinowski@imec.be; Chasin, A.; Cheyns, D.; Steudel, S.; Schols, S. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Heremans, P. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); ESAT, Katholieke Universiteit Leuven, Kasteelpark Arenberg 10, B-3001 Leuven (Belgium)

    2015-04-06

    Amorphous indium-gallium-zinc-oxide (a-IGZO) is demonstrated as an electron transport layer (ETL) in a high-performance organic photodetector (OPD). Dark current in the range of 10 nA/cm{sup 2} at a bias voltage of −2 V and a high photoresponse in the visible spectrum were obtained in inverted OPDs with poly(3-hexylthiophene) and phenyl-C{sub 61}-butyric acid methyl ester active layer. The best results were obtained for the optimum a-IGZO thickness of 7.5 nm with specific detectivity of 3 × 10{sup 12} Jones at the wavelength of 550 nm. The performance of the best OPD devices using a-IGZO was shown to be comparable to state-of-the-art devices based on TiO{sub x} as ETL, with higher rectification achieved in reverse bias. Yield and reproducibility were also enhanced with a-IGZO, facilitating fabrication of large area OPDs. Furthermore, easier integration with IGZO-based readout backplanes can be envisioned, where the channel material can be used as photodiode buffer layer after additional treatment.

  14. Interfacial engineering of electron transport layer using Caesium Iodide for efficient and stable organic solar cells

    Science.gov (United States)

    Upama, Mushfika Baishakhi; Elumalai, Naveen Kumar; Mahmud, Md Arafat; Wright, Matthew; Wang, Dian; Xu, Cheng; Haque, Faiazul; Chan, Kah Howe; Uddin, Ashraf

    2017-09-01

    Polymer solar cells (PSCs) have gained immense research interest in the recent years predominantly due to low-cost, solution process-ability, and facile device fabrication. However, achieving high stability without compromising the power conversion efficiency (PCE) serves to be an important trade-off for commercialization. In line with this, we demonstrate the significance of incorporating a CsI/ZnO bilayer as electron transport layer (ETL) in the bulk heterojunction PSCs employing low band gap polymer (PTB7) and fullerene (PC71BM) as the photo-active layer. The devices with CsI/ZnO interlayer exhibited substantial enhancement of 800% and 12% in PCE when compared to the devices with pristine CsI and pristine ZnO as ETL, respectively. Furthermore, the UV and UV-ozone induced degradation studies revealed that the devices incorporating CsI/ZnO bilayer possess excellent decomposition stability (∼23% higher) over the devices with pristine ZnO counterparts. The incorporation of CsI between ITO and ZnO was found to favorably modify the energy-level alignment at the interface, contributing to the charge collection efficiency as well as protecting the adjacent light absorbing polymer layers from degradation. The mechanism behind the improvement in PCE and stability is analyzed using the electrochemical impedance spectroscopy and dark I-V characteristics.

  15. Electron-stimulated desorption of cesium atoms from cesium layers adsorbed on gold-covered tungsten

    Energy Technology Data Exchange (ETDEWEB)

    Ageev, V N; Kuznetsov, Yu A; Potekhina, N D, E-mail: kuznets@ms.ioffe.r [A F Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021, St Petersburg (Russian Federation)

    2010-03-03

    The electron-stimulated desorption (ESD) yields and energy distributions (ED) for neutral cesium atoms have been measured from cesium layers adsorbed on a gold-covered tungsten surface as a function of electron energy, gold film thickness, cesium coverage and substrate temperature. The measurements have been carried out using a time-of-flight method and surface ionization detector in the temperature range 160-300 K. A measurable ESD yield for Cs atoms is observed only after deposition of more than one monolayer of gold and cesium on a tungsten surface at a temperature T = 300 K, which is accompanied by the formation of a CsAu semiconductor film covered with a cesium atom monolayer. The Cs atom ESD yield as a function of incident electron energy has a resonant character and consists of two peaks, the appearance of which depends on both electron energy and substrate temperature. The first peak has an appearance threshold at an electron energy of 57 eV and a substrate temperature of 300 K that is due to Au 5p{sub 3/2} core level excitation in the substrate. The second peak appears at an electron energy of 24 eV and a substrate temperature of 160 K. It is associated with a Cs 5s core level excitation in the Cs adsorbed layer. The Au 5p{sub 3/2} level excitation corresponds to a single broad peak in the ED with a maximum at a kinetic energy of 0.45 eV at a substrate temperature T = 300 K, which is split into two peaks with maxima at kinetic energies of 0.36 and 0.45 eV at a substrate temperature of 160 K, associated with different Cs atom ESD channels. The Cs 5s level excitation leads to an ED for Cs atoms with a maximum at a kinetic energy of approx 0.57 eV which exists only at T < 240 K and low Cs concentrations. The mechanisms for all the Cs atom ESD channels are proposed and compared with the Na atom ESD channels in the Na-Au-W system.

  16. Electronic structure investigation of atomic layer deposition ruthenium(oxide) thin films using photoemission spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Schaefer, Michael, E-mail: mvschaefer@mail.usf.edu, E-mail: schlaf@mail.usf.edu [Department of Physics, University of South Florida, Tampa, Florida 33620 (United States); Schlaf, Rudy, E-mail: mvschaefer@mail.usf.edu, E-mail: schlaf@mail.usf.edu [Department of Electrical Engineering, University of South Florida, Tampa, Florida 33620 (United States)

    2015-08-14

    Analyzing and manipulating the electronic band line-up of interfaces in novel micro- and nanoelectronic devices is important to achieve further advancement in this field. Such band alignment modifications can be achieved by introducing thin conformal interfacial dipole layers. Atomic layer deposition (ALD), enabling angstrom-precise control over thin film thickness, is an ideal technique for this challenge. Ruthenium (Ru{sup 0}) and its oxide (RuO{sub 2}) have gained interest in the past decade as interfacial dipole layers because of their favorable properties like metal-equivalent work functions, conductivity, etc. In this study, initial results of the electronic structure investigation of ALD Ru{sup 0} and RuO{sub 2} films via photoemission spectroscopy are presented. These experiments give insight into the band alignment, growth behavior, surface structure termination, and dipole formation. The experiments were performed in an integrated vacuum system attached to a home-built, stop-flow type ALD reactor without exposing the samples to the ambient in between deposition and analysis. Bis(ethylcyclopentadienyl)ruthenium(II) was used as precursor and oxygen as reactant. The analysis chamber was outfitted with X-ray photoemission spectroscopy (LIXPS, XPS). The determined growth modes are consistent with a strong growth inhibition situation with a maximum average growth rate of 0.21 Å/cycle for RuO{sub 2} and 0.04 Å/cycle for Ru.{sup 0} An interface dipole of up to −0.93 eV was observed, supporting the assumption of a strongly physisorbed interface. A separate experiment where the surface of a RuO film was sputtered suggests that the surface is terminated by an intermediate, stable, non-stoichiometric RuO{sub 2}/OH compound whose surface is saturated with hydroxyl groups.

  17. Electronic structure investigation of atomic layer deposition ruthenium(oxide) thin films using photoemission spectroscopy

    Science.gov (United States)

    Schaefer, Michael; Schlaf, Rudy

    2015-08-01

    Analyzing and manipulating the electronic band line-up of interfaces in novel micro- and nanoelectronic devices is important to achieve further advancement in this field. Such band alignment modifications can be achieved by introducing thin conformal interfacial dipole layers. Atomic layer deposition (ALD), enabling angstrom-precise control over thin film thickness, is an ideal technique for this challenge. Ruthenium (Ru0) and its oxide (RuO2) have gained interest in the past decade as interfacial dipole layers because of their favorable properties like metal-equivalent work functions, conductivity, etc. In this study, initial results of the electronic structure investigation of ALD Ru0 and RuO2 films via photoemission spectroscopy are presented. These experiments give insight into the band alignment, growth behavior, surface structure termination, and dipole formation. The experiments were performed in an integrated vacuum system attached to a home-built, stop-flow type ALD reactor without exposing the samples to the ambient in between deposition and analysis. Bis(ethylcyclopentadienyl)ruthenium(II) was used as precursor and oxygen as reactant. The analysis chamber was outfitted with X-ray photoemission spectroscopy (LIXPS, XPS). The determined growth modes are consistent with a strong growth inhibition situation with a maximum average growth rate of 0.21 Å/cycle for RuO2 and 0.04 Å/cycle for Ru.0 An interface dipole of up to -0.93 eV was observed, supporting the assumption of a strongly physisorbed interface. A separate experiment where the surface of a RuO film was sputtered suggests that the surface is terminated by an intermediate, stable, non-stoichiometric RuO2/OH compound whose surface is saturated with hydroxyl groups.

  18. Electronic structure investigation of atomic layer deposition ruthenium(oxide) thin films using photoemission spectroscopy

    International Nuclear Information System (INIS)

    Schaefer, Michael; Schlaf, Rudy

    2015-01-01

    Analyzing and manipulating the electronic band line-up of interfaces in novel micro- and nanoelectronic devices is important to achieve further advancement in this field. Such band alignment modifications can be achieved by introducing thin conformal interfacial dipole layers. Atomic layer deposition (ALD), enabling angstrom-precise control over thin film thickness, is an ideal technique for this challenge. Ruthenium (Ru 0 ) and its oxide (RuO 2 ) have gained interest in the past decade as interfacial dipole layers because of their favorable properties like metal-equivalent work functions, conductivity, etc. In this study, initial results of the electronic structure investigation of ALD Ru 0 and RuO 2 films via photoemission spectroscopy are presented. These experiments give insight into the band alignment, growth behavior, surface structure termination, and dipole formation. The experiments were performed in an integrated vacuum system attached to a home-built, stop-flow type ALD reactor without exposing the samples to the ambient in between deposition and analysis. Bis(ethylcyclopentadienyl)ruthenium(II) was used as precursor and oxygen as reactant. The analysis chamber was outfitted with X-ray photoemission spectroscopy (LIXPS, XPS). The determined growth modes are consistent with a strong growth inhibition situation with a maximum average growth rate of 0.21 Å/cycle for RuO 2 and 0.04 Å/cycle for Ru. 0 An interface dipole of up to −0.93 eV was observed, supporting the assumption of a strongly physisorbed interface. A separate experiment where the surface of a RuO film was sputtered suggests that the surface is terminated by an intermediate, stable, non-stoichiometric RuO 2 /OH compound whose surface is saturated with hydroxyl groups

  19. Structural, optical and compositional stability of MoS2 multi-layer flakes under high dose electron beam irradiation

    Science.gov (United States)

    Rotunno, E.; Fabbri, F.; Cinquanta, E.; Kaplan, D.; Longo, M.; Lazzarini, L.; Molle, A.; Swaminathan, V.; Salviati, G.

    2016-06-01

    MoS2 multi-layer flakes, exfoliated from geological molybdenite, have been exposed to high dose electron irradiation showing clear evidence of crystal lattice and stoichiometry modifications. A massive surface sulfur depletion is induced together with the consequent formation of molybdenum nanoislands. It is found that a nanometric amorphous carbon layer, unwillingly deposited during the transmission electron microscope experiments, prevents the formation of the nanoislands. In the absence of the carbon layer, the formation of molybdenum grains proceeds both on the top and bottom surfaces of the flake. If carbon is present on both the surfaces then the formation of Mo grains is completely prevented.

  20. Etched ion tracks in silicon oxide and silicon oxynitride as charge injection or extraction channels for novel electronic structures

    International Nuclear Information System (INIS)

    Fink, D.; Petrov, A.V.; Hoppe, K.; Fahrner, W.R.; Papaleo, R.M.; Berdinsky, A.S.; Chandra, A.; Chemseddine, A.; Zrineh, A.; Biswas, A.; Faupel, F.; Chadderton, L.T.

    2004-01-01

    The impact of swift heavy ions onto silicon oxide and silicon oxynitride on silicon creates etchable tracks in these insulators. After their etching and filling-up with highly resistive matter, these nanometric pores can be used as charge extraction or injection paths towards the conducting channel in the underlying silicon. In this way, a novel family of electronic structures has been realized. The basic characteristics of these 'TEMPOS' (=tunable electronic material with pores in oxide on silicon) structures are summarized. Their functionality is determined by the type of insulator, the etch track diameters and lengths, their areal densities, the type of conducting matter embedded therein, and of course by the underlying semiconductor and the contact geometry. Depending on the TEMPOS preparation recipe and working point, the structures may resemble gatable resistors, condensors, diodes, transistors, photocells, or sensors, and they are therefore rather universally applicable in electronics. TEMPOS structures are often sensitive to temperature, light, humidity and organic gases. Also light-emitting TEMPOS structures have been produced. About 37 TEMPOS-based circuits such as thermosensors, photosensors, humidity and alcohol sensors, amplifiers, frequency multipliers, amplitude modulators, oscillators, flip-flops and many others have already been designed and successfully tested. Sometimes TEMPOS-based circuits are more compact than conventional electronics

  1. Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks

    International Nuclear Information System (INIS)

    Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Liu, Xi-Wen; Chang, Ting-Chang; Chen, Ching-En; Ho, Szu-Han; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen

    2014-01-01

    This work investigates electron-electron scattering (EES)-induced channel hot electron (CHE) injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors (n-MOSFETs) with high-k/metal gate stacks. Many groups have proposed new models (i.e., single-particle and multiple-particle process) to well explain the hot carrier degradation in nanoscale devices and all mechanisms focused on Si-H bond dissociation at the Si/SiO 2 interface. However, for high-k dielectric devices, experiment results show that the channel hot carrier trapping in the pre-existing high-k bulk defects is the main degradation mechanism. Therefore, we propose a model of EES-induced CHE injection to illustrate the trapping-dominant mechanism in nanoscale n-MOSFETs with high-k/metal gate stacks.

  2. Reduction of electron density in a plasma by injection of liquids

    Science.gov (United States)

    Sodha, M. S.; Evans, J. S.

    1974-01-01

    In this paper, the authors have investigated the physics of various processes relevant to the reduction of electron density in a plasma by addition of water droplets; two processes have in particular been analyzed in some detail, viz, the electron attachment to charged dielectric droplets and the emission of negative ions by vaporization from these droplets. The results of these analyses have been applied to a study of the kinetics of reduction of electron density and charging of droplets in an initially overionized plasma, after addition of water droplets. A number of simplifying assumptions including uniform size and charge on droplets and negligible change in the radius of the droplet due to evaporation have been made.

  3. Characterization of metal-supported axial injection plasma sprayed solid oxide fuel cells with aqueous suspension plasma sprayed electrolyte layers

    Science.gov (United States)

    Waldbillig, D.; Kesler, O.

    A method for manufacturing metal-supported SOFCs with atmospheric plasma spraying (APS) is presented, making use of aqueous suspension feedstock for the electrolyte layer and dry powder feedstock for the anode and cathode layers. The cathode layer was deposited first directly onto a metal support, in order to minimize contact resistance, and to allow the introduction of added porosity. The electrolyte layers produced by suspension plasma spraying (SPS) were characterized in terms of thickness, permeability, and microstructure, and the impact of substrate morphology on electrolyte properties was investigated. Fuel cells produced by APS were electrochemically tested at temperatures ranging from 650 to 750 °C. The substrate morphology had little effect on open circuit voltage, but substrates with finer porosity resulted in lower kinetic losses in the fuel cell polarization.

  4. Characterization of metal-supported axial injection plasma sprayed solid oxide fuel cells with aqueous suspension plasma sprayed electrolyte layers

    Energy Technology Data Exchange (ETDEWEB)

    Waldbillig, D. [University of British Columbia, Department of Materials Engineering, 309-6350 Stores Road, Vancouver, BC (Canada); Kesler, O. [University of Toronto, Department of Mechanical and Industrial Engineering, 5 King' s College Road, Toronto, Ontario (Canada)

    2009-06-15

    A method for manufacturing metal-supported SOFCs with atmospheric plasma spraying (APS) is presented, making use of aqueous suspension feedstock for the electrolyte layer and dry powder feedstock for the anode and cathode layers. The cathode layer was deposited first directly onto a metal support, in order to minimize contact resistance, and to allow the introduction of added porosity. The electrolyte layers produced by suspension plasma spraying (SPS) were characterized in terms of thickness, permeability, and microstructure, and the impact of substrate morphology on electrolyte properties was investigated. Fuel cells produced by APS were electrochemically tested at temperatures ranging from 650 to 750 C. The substrate morphology had little effect on open circuit voltage, but substrates with finer porosity resulted in lower kinetic losses in the fuel cell polarization. (author)

  5. Resistivity scaling due to electron surface scattering in thin metal layers

    Science.gov (United States)

    Zhou, Tianji; Gall, Daniel

    2018-04-01

    The effect of electron surface scattering on the thickness-dependent electrical resistivity ρ of thin metal layers is investigated using nonequilibrium Green's function density functional transport simulations. Cu(001) thin films with thickness d =1 -2 nm are used as a model system, employing a random one-monolayer-high surface roughness and frozen phonons to cause surface and bulk scattering, respectively. The zero-temperature resistivity increases from 9.7 ±1.0 μ Ω cm at d =1.99 nm to 18.7 ±2.6 μ Ω cm at d =0.9 0 nm, contradicting the asymptotic T =0 prediction from the classical Fuchs-Sondheimer model. At T =9 00 K, ρ =5.8 ±0.1 μ Ω cm for bulk Cu and ρ =13.4 ±1.1 and 22.5 ±2.4 μ Ω cm for layers with d =1.99 and 0.90 nm, respectively, indicating an approximately additive phonon contribution which, however, is smaller than for bulk Cu or atomically smooth layers. The overall data indicate that the resistivity contribution from surface scattering is temperature-independent and proportional to 1 /d , suggesting that it can be described using a surface-scattering mean-free path λs for 2D transport which is channel-independent and proportional to d . Data fitting indicates λs=4 ×d for the particular simulated Cu(001) surfaces with a one-monolayer-high surface roughness. The 1 /d dependence deviates considerably from previous 1 /d2 predictions from quantum models, indicating that the small-roughness approximation in these models is not applicable to very thin (<2 nm) layers, where the surface roughness is a considerable fraction of d .

  6. Enhanced long-distance transport of periodic electron beams in an advanced double layer cone-channel target

    Science.gov (United States)

    Ji, Yanling; Duan, Tao; Zhou, Weimin; Li, Boyuan; Wu, Fengjuan; Zhang, Zhimeng; Ye, Bin; Wang, Rong; Wu, Chunrong; Tang, Yongjian

    2018-02-01

    An enhanced long-distance transport of periodic electron beams in an advanced double layer cone-channel target is investigated using two-dimensional particle-in-cell simulations. The target consists of a cone attached to a double-layer hollow channel with a near-critical-density inner layer. The periodic electron beams are generated by the combination of ponderomotive force and longitudinal laser electric field. Then a stable electron propagation is achieved in the double-layer channel over a much longer distance without evident divergency, compared with a normal cone-channel target. Detailed simulations show that the much better long-distance collimation and guidance of energetic electrons is attributed to the much stronger electromagnetic fields at the inner wall surfaces. Furthermore, a continuous electron acceleration is obtained by the more intense laser electric fields and extended electron acceleration length in the channel. Our investigation shows that by employing this advanced target, both the forward-going electron energy flux in the channel and the energy coupling efficiency from laser to electrons are about threefold increased in comparison with the normal case.

  7. Enhanced long-distance transport of periodic electron beams in an advanced double layer cone-channel target

    Directory of Open Access Journals (Sweden)

    Yanling Ji

    2018-02-01

    Full Text Available An enhanced long-distance transport of periodic electron beams in an advanced double layer cone-channel target is investigated using two-dimensional particle-in-cell simulations. The target consists of a cone attached to a double-layer hollow channel with a near-critical-density inner layer. The periodic electron beams are generated by the combination of ponderomotive force and longitudinal laser electric field. Then a stable electron propagation is achieved in the double-layer channel over a much longer distance without evident divergency, compared with a normal cone-channel target. Detailed simulations show that the much better long-distance collimation and guidance of energetic electrons is attributed to the much stronger electromagnetic fields at the inner wall surfaces. Furthermore, a continuous electron acceleration is obtained by the more intense laser electric fields and extended electron acceleration length in the channel. Our investigation shows that by employing this advanced target, both the forward-going electron energy flux in the channel and the energy coupling efficiency from laser to electrons are about threefold increased in comparison with the normal case.

  8. Electron-hole pairing and anomalous properties of layered high-Tc compounds

    International Nuclear Information System (INIS)

    Efetov, K.B.

    1991-01-01

    Band-structure pictures for layered high-T c materials available in the literature show that, besides the dispersive broad band responsible for metallic properties, there are at least two additional bands having minima and maxima near the Fermi surface. These additional bands belong to different planes (for example, CuO planes and BiO planes in Bi 2 Sr 2 CaCu 2 O 8 ) or to planes and chains (in YBa 2 Cu 3 O 7 ). Provided the Coulomb repulsion is not very weak, pairing of electrons and holes belonging to these additional bands in different planes or planes and chains is possible. It is shown that, if this possibility is realized, a transition in the additional bands into a state of an excitonic dielectric occurs. The spin of an electron-hole pair can be both 0 and 1. Due to the fact that the electron and the hole of the pair belong to different planes, there are no charge- or spin-density waves. This excitonic insulator can serve as a polarizing substance and give a strong attraction between electrons of the metallic band even if the bare interaction is repulsive. It is also shown that some interesting gapless excitations exist. Provided there are impurities in the system that scatter from plane to plane, these excitations are coupled to the electrons of the metallic band. This effective interaction can be described in terms of an effective mode P(ω) with ImP(ω)∼-sgnω. As a result, one can obtain such properties of the normal state as a linear dependence of the resistivity on temperature, linear dependence of the density of states on energy, constant background in the Raman-scattering intensity, large nuclear relaxation rate, etc., which are very well known from experiments

  9. Effect of electron injection on defect reactions in irradiated silicon containing boron, carbon, and oxygen

    Science.gov (United States)

    Makarenko, L. F.; Lastovskii, S. B.; Yakushevich, H. S.; Moll, M.; Pintilie, I.

    2018-04-01

    Comparative studies employing Deep Level Transient Spectroscopy and C-V measurements have been performed on recombination-enhanced reactions between defects of interstitial type in boron doped silicon diodes irradiated with alpha-particles. It has been shown that self-interstitial related defects which are immobile even at room temperatures can be activated by very low forward currents at liquid nitrogen temperatures. Their activation is accompanied by the appearance of interstitial carbon atoms. It has been found that at rather high forward current densities which enhance BiOi complex disappearance, a retardation of Ci annealing takes place. Contrary to conventional thermal annealing of the interstitial boron-interstitial oxygen complex, the use of forward current injection helps to recover an essential part of charge carriers removed due to irradiation.

  10. Impact of the Anchoring Ligand on Electron Injection and Recombination Dynamics at the Interface of Novel Asymmetric Push-Pull Zinc Phthalocyanines and TiO2

    NARCIS (Netherlands)

    Sharma, Divya; Steen, Gerrit Willem; Korterik, Jeroen P.; Garcia-Iglesias, M.; Vazquez, P; Torres, T.; Herek, Jennifer Lynn; Huijser, Jannetje Maria

    2013-01-01

    Phthalocyanines are promising photosensitizers for dye-sensitized solar cells (DSSCs). A parameter that has been problematic for a long time involves electron injection (EI) into the TiO2. The development of push-pull phthalocyanines shows great potential to improve the ratio of EI to back electron

  11. The injected-charse contrast mechanism in scanned imaging of doped semiconductors by very slow electrons

    Czech Academy of Sciences Publication Activity Database

    Frank, Luděk; Müllerová, Ilona

    2005-01-01

    Roč. 106, č. 1 (2005), s. 28-36 ISSN 0304-3991 R&D Projects: GA ČR(CZ) GA202/04/0281 Keywords : Low-energy electrons * SEM * Dopant contrast Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.490, year: 2005

  12. Simulations and experiments on external electron injection for laser wakefield acceleration

    NARCIS (Netherlands)

    Dijk, van W.

    2010-01-01

    Laser wake field acceleration is a technique that can be used to accelerate electrons using electric fields that are several orders of magnitude higher than those available in conventional accelerators. With these higher fields, it is possible to drastically reduce the length of accelerator needed

  13. Ultrafast electron injection at the cationic porphyrin-graphene interface assisted by molecular flattening

    KAUST Repository

    Aly, Shawkat Mohammede; Parida, Manas R.; Alarousu, Erkki; Mohammed, Omar F.

    2014-01-01

    The steady-state and femtosecond (fs) time-resolved data clearly demonstrate that the charge transfer (CT) process at the porphyrin-graphene carboxylate (GC) interfaces can be tuned from zero to very sufficient and ultrafast by changing the electronic structure of the meso unit and the redox properties of the porphyrin cavity. This journal is © the Partner Organisations 2014.

  14. The intriguing electronic and optical properties modulation of hydrogen and fluorine codecorated silicene layers

    International Nuclear Information System (INIS)

    Yang, Qun; Tan, Chunjian; Meng, Ruishen; Jiang, Junke; Liang, Qiuhua; Sun, Xiang; Yang, Daoguo; Chen, Xianping

    2017-01-01

    Highlights: • The HSiF bilayer is very stable due to the high binding energy even larger than the ones of bilayer graphene. • The HSiF bilayer exhibits a moderate direct band gap of 0.296 eV much lower than that of HSiF monolayer. • All the HSiF layers have a direct band gap nature, irrespective of stacking pattern, thickness and external electric fields, which is an advantage over MoS 2 layers. Besides, it is advantageous to the application of HSiF layers in the field of optical devices. • The external electric field can effectively tune the band gaps of HSiF layers. Especially, even a semiconductor–metal transition occurs. • After the formation of HSiF bilayer, the complete electron-hole separation enhances the photocatalytic efficiency of HSiF bilayer and it exhibits a significantly improved visible light adsorption peak. - Abstract: First-principles calculations based on density-functional theory reveal some superior physical properties of hydrogen and fluorine co-decorated silicene (HSiF) monolayer and bilayer. Our simulated results reveal that the HSiF monolayer is a large direct band gap semiconductor greatly differing from the gapless semi-metallic silicene. There exists strong interlayer coupling in HSiF bilayer, leading to the good stabilities of HSiF bilayer even beyond bilayer graphene. The proposed HSiF bilayer exhibits a moderate direct band gap of 0.296 eV which is much lower than that of HSiF monolayer. Encouragingly, HSiF layers all have a direct band gap nature, irrespective of stacking pattern, thickness and external electric fields, which is an advantage over MoS 2 layers. Furthermore, an out-of-plane electric field has an evident impact on the band structures of the HSiF monolayer and bilayer. Especially, the band gap of HSiF bilayer can be effectively tuned by external electric field, even a semiconductor–metal transition occurs. More importantly, the HSiF bilayer exhibits a significant improved visible light adsorption peak with

  15. The intriguing electronic and optical properties modulation of hydrogen and fluorine codecorated silicene layers

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Qun; Tan, Chunjian [Faculty of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, 541004 Guilin (China); Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, Chongqing University and College of Opto-Electronic Engineering, Chongqing University, 400044 Chongqing (China); Meng, Ruishen; Jiang, Junke; Liang, Qiuhua; Sun, Xiang [Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, Chongqing University and College of Opto-Electronic Engineering, Chongqing University, 400044 Chongqing (China); Yang, Daoguo [Faculty of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, 541004 Guilin (China); Chen, Xianping, E-mail: xianpingchen@cqu.edu.cn [Faculty of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, 541004 Guilin (China); Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, Chongqing University and College of Opto-Electronic Engineering, Chongqing University, 400044 Chongqing (China)

    2017-03-15

    Highlights: • The HSiF bilayer is very stable due to the high binding energy even larger than the ones of bilayer graphene. • The HSiF bilayer exhibits a moderate direct band gap of 0.296 eV much lower than that of HSiF monolayer. • All the HSiF layers have a direct band gap nature, irrespective of stacking pattern, thickness and external electric fields, which is an advantage over MoS{sub 2} layers. Besides, it is advantageous to the application of HSiF layers in the field of optical devices. • The external electric field can effectively tune the band gaps of HSiF layers. Especially, even a semiconductor–metal transition occurs. • After the formation of HSiF bilayer, the complete electron-hole separation enhances the photocatalytic efficiency of HSiF bilayer and it exhibits a significantly improved visible light adsorption peak. - Abstract: First-principles calculations based on density-functional theory reveal some superior physical properties of hydrogen and fluorine co-decorated silicene (HSiF) monolayer and bilayer. Our simulated results reveal that the HSiF monolayer is a large direct band gap semiconductor greatly differing from the gapless semi-metallic silicene. There exists strong interlayer coupling in HSiF bilayer, leading to the good stabilities of HSiF bilayer even beyond bilayer graphene. The proposed HSiF bilayer exhibits a moderate direct band gap of 0.296 eV which is much lower than that of HSiF monolayer. Encouragingly, HSiF layers all have a direct band gap nature, irrespective of stacking pattern, thickness and external electric fields, which is an advantage over MoS{sub 2} layers. Furthermore, an out-of-plane electric field has an evident impact on the band structures of the HSiF monolayer and bilayer. Especially, the band gap of HSiF bilayer can be effectively tuned by external electric field, even a semiconductor–metal transition occurs. More importantly, the HSiF bilayer exhibits a significant improved visible light adsorption

  16. The Effects of Solar Wind Dynamic Pressure Changes on the Substorm Auroras and Energetic Electron Injections on 24 August 2005

    Science.gov (United States)

    Li, L. Y.; Wang, Z. Q.

    2018-01-01

    After the passage of an interplanetary (IP) shock at 06:13 UT on 24 August 2005, the enhancement (>6 nPa) of solar wind dynamic pressure and the southward turning of interplanetary magnetic field (IMF) cause the earthward movement of dayside magnetopause and the drift loss of energetic particles near geosynchronous orbit. The persistent electron drift loss makes the geosynchronous satellites cannot observe the substorm electron injection phenomenon during the two substorm expansion phases (06:57-07:39 UT) on that day. Behind the IP shock, the fluctuations ( 0.5-3 nPa) of solar wind dynamic pressure not only alter the dayside auroral brightness but also cause the entire auroral oval to swing in the day-night direction. However, there is no Pi2 pulsation in the nightside auroral oval during the substorm growth phase from 06:13 to 06:57 UT. During the subsequent two substorm expansion phases, the substorm expansion activities cause the nightside aurora oval brightening from substorm onset site to higher latitudes, and meanwhile, the enhancement (decline) of solar wind dynamic pressure makes the nightside auroral oval move toward the magnetic equator (the magnetic pole). These observations demonstrate that solar wind dynamic pressure changes and substorm expansion activities can jointly control the luminosity and location of the nightside auroral oval when the internal and external disturbances occur simultaneously. During the impact of a strong IP shock, the earthward movement of dayside magnetopause probably causes the disappearance of the substorm electron injections near geosynchronous orbit.

  17. Electron injection and acceleration in the plasma bubble regime driven by an ultraintense laser pulse combined with using dense-plasma wall and block

    Science.gov (United States)

    Zhao, Xue-Yan; Xie, Bai-Song; Wu, Hai-Cheng; Zhang, Shan; Hong, Xue-Ren; Aimidula, Aimierding

    2012-03-01

    An optimizing and alternative scheme for electron injection and acceleration in the wake bubble driven by an ultraintense laser pulse is presented. In this scheme, the dense-plasma wall with an inner diameter matching the expected bubble size is placed along laser propagation direction. Meanwhile, a dense-plasma block dense-plasma is adhered inward transversely at some certain position of the wall. Particle-in-cell simulations are performed, which demonstrate that the block plays an important role in the first electron injection and acceleration. The result shows that a collimated electron bunch with a total number of about 4.04×108μm-1 can be generated and accelerated stably to 1.61 GeV peak energy with 2.6% energy spread. The block contributes about 50% to the accelerated electron injection bunch by tracing and sorting statistically the source.

  18. A new electrode design for ambipolar injection in organic semiconductors.

    Science.gov (United States)

    Kanagasekaran, Thangavel; Shimotani, Hidekazu; Shimizu, Ryota; Hitosugi, Taro; Tanigaki, Katsumi

    2017-10-17

    Organic semiconductors have attracted much attention for low-cost, flexible and human-friendly optoelectronics. However, achieving high electron-injection efficiency is difficult from air-stable electrodes and cannot be equivalent to that of holes. Here, we present a novel concept of electrode composed of a bilayer of tetratetracontane (TTC) and polycrystalline organic semiconductors (pc-OSC) covered by a metal layer. Field-effect transistors of single-crystal organic semiconductors with the new electrodes of M/pc-OSC/TTC (M: Ca or Au) show both highly efficient electron and hole injection. Contact resistance for electron injection from Au/pc-OSC/TTC and hole injection from Ca/pc-OSC/TTC are comparable to those for electron injection from Ca and hole injection from Au, respectively. Furthermore, the highest field-effect mobilities of holes (22 cm 2  V -1  s -1 ) and electrons (5.0 cm 2  V -1  s -1 ) are observed in rubrene among field-effect transistors with electrodes so far proposed by employing Ca/pc-OSC/TTC and Au/pc-OSC/TTC electrodes for electron and hole injection, respectively.One of technological challenges building organic electronics is efficient injection of electrons at metal-semiconductor interfaces compared to that of holes. The authors show an air-stable electrode design with induced gap states, which support Fermi level pinning and thus ambipolar carrier injection.

  19. High-efficiency green phosphorescent organic light-emitting diodes with double-emission layer and thick N-doped electron transport layer

    Energy Technology Data Exchange (ETDEWEB)

    Nobuki, Shunichiro, E-mail: shunichiro.nobuki.nb@hitachi.com [Hitachi Research Laboratory, Hitachi Ltd., 7-1-1 Omika-cho, Hitachi-city, Ibaraki 319-1292 (Japan); Wakana, Hironori; Ishihara, Shingo [Hitachi Research Laboratory, Hitachi Ltd., 7-1-1 Omika-cho, Hitachi-city, Ibaraki 319-1292 (Japan); Mikami, Akiyoshi [Dept. of Electrical Engineering, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichimachi, Ishikawa 921-8501 (Japan)

    2014-03-03

    We have developed green phosphorescent organic light-emitting diodes (OLEDs) with high external quantum efficiency of 59.7% and power efficiency of 243 lm/W at 2.73 V at 0.053 mA/cm{sup 2}. A double emission layer and a thick n-doped electron transport layer were adopted to improve the exciton recombination factor. A high refractive index hemispherical lens was attached to a high refractive index substrate for extracting light trapped inside the substrate and the multiple-layers of OLEDs to air. Additionally, we analyzed an energy loss mechanism to clarify room for the improvement of our OLEDs including the charge balance factor. - Highlights: • We developed high efficiency green phosphorescent organic light-emitting diode (OLED). • Our OLED had external quantum efficiency of 59.7% and power efficiency of 243 lm/W. • A double emission layer and thick n-doped electron transport layer were adopted. • High refractive index media (hemispherical lens and substrate) were also used. • We analyzed an energy loss mechanism to clarify the charge balance factor of our OLED.

  20. X-ray and scanning electron microscopic investigation of porous silicon and silicon epitaxial layers grown on porous silicon

    International Nuclear Information System (INIS)

    Wierzchowski, W.; Pawlowska, M.; Nossarzewska-Orlowska, E.; Brzozowski, A.; Wieteska, K.; Graeff, W.

    1998-01-01

    The 1 to 5 μm thick layers of porous silicon and epitaxial layers grown on porous silicon were studied by means of X-ray diffraction methods, realised with a wide use of synchrotron source and scanning microscopy. The results of x-ray investigation pointed the difference of lateral periodicity between the porous layer and the substrate. It was also found that the deposition of epitaxial layer considerably reduced the coherence of porous fragments. A number of interface phenomena was also observed in section and plane wave topographs. The scanning electron microscopic investigation of cleavage faces enabled direct evaluation of porous layer thickness and revealed some details of their morphology. The scanning observation of etched surfaces of epitaxial layers deposited on porous silicon revealed dislocations and other defects not reasonable in the X-ray topographs. (author)

  1. Selected methods of electron-and ion-diagnostics in tokamak scrape-off-layer

    Directory of Open Access Journals (Sweden)

    Sadowski Marek J.

    2015-06-01

    Full Text Available This invited paper considers reasons why exact measurements of fast electron and ion losses in tokamaks, and particularly i n a scrape-off-layer and near a divertor region, are necessary in order to master nuclear fusion energy production. Attention is also paid to direct measurements of escaping fusion products from D-D and D-T reactions, and in particular of fast alphas which might be used for plasma heating. The second part describes the generation of so-called runaway and ripple-born electrons which might induce high energy losses and cause severe damages of internal walls in fusion facilities. Advantages and disadvantages of different diagnostic methods applied for studies of such fast electrons are discussed. Particular attention is paid to development of a direct measuring technique based on the Cherenkov effect which might be induced by fast electrons in appropriate radiators. There are presented various versions of Cherenkov-type probes which have been developed by the NCBJ team and applied in different tokamak experiments. The third part is devoted to direct measurements of fast ions (including those produced by the nuclear fusion reactions which can escape from a high-temperature plasma region. Investigation of fast fusion-produced protons from tokamak discharges is reported. New ion probes, which were developed by the NCBJ team, are also presented. For the first time there is given a detailed description of an ion pinhole camera, which enables irradiation of several nuclear track detectors during a single tokamak discharge, and a miniature Thomson-type mass-spectrometer, which can be used for ion measurements at plasma borders.

  2. Electron Beam Evaporated TiO2 Layer for High Efficiency Planar Perovskite Solar Cells on Flexible Polyethylene Terephthalate Substrates

    KAUST Repository

    Qiu, Weiming

    2015-09-30

    The TiO2 layer made by electron beam (e-beam) induced evaporation is demonstrated as electron transport layer (ETL) in high efficiency planar junction perovskite solar cells. The temperature of the substrate and the thickness of the TiO2 layer can be easily controlled with this e-beam induced evaporation method, which enables the usage of different types of substrates. Here, Perovskite solar cells based on CH3NH3PbI3-xClx achieve power conversion efficiencies of 14.6% on glass and 13.5% on flexible plastic substrates. The relationship between the TiO2 layer thickness and the perovskite morphology is studied with scanning electron microscope (SEM), atomic force microscope (AFM), and X-ray photoelectron spectroscopy (XPS). Our results indicate that pinholes in thin TiO2 layer lead to pinholes in the perovskite layer. By optimizing the TiO2 thickness, perovskite layers with substantially increased surface coverage and reduced pinhole areas are fabricated, increasing overall device performance.

  3. Ab initio electronic band structure study of III-VI layered semiconductors

    Science.gov (United States)

    Olguín, Daniel; Rubio-Ponce, Alberto; Cantarero, Andrés

    2013-08-01

    We present a total energy study of the electronic properties of the rhombohedral γ-InSe, hexagonal ɛ-GaSe, and monoclinic GaTe layered compounds. The calculations have been done using the full potential linear augmented plane wave method, including spin-orbit interaction. The calculated valence bands of the three compounds compare well with angle resolved photoemission measurements and a discussion of the small discrepancies found has been given. The present calculations are also compared with recent and previous band structure calculations available in the literature for the three compounds. Finally, in order to improve the calculated band gap value we have used the recently proposed modified Becke-Johnson correction for the exchange-correlation potential.

  4. Inductive crystal field control in layered metal oxides with correlated electrons

    International Nuclear Information System (INIS)

    Balachandran, P. V.; Cammarata, A.; Rondinelli, J. M.; Nelson-Cheeseman, B. B.; Bhattacharya, A.

    2014-01-01

    We show that the NiO 6 crystal field energies can be tailored indirectly via heterovalent A cation ordering in layered (La,A)NiO 4 Ruddlesden–Popper (RP) oxides, where A = Sr, Ca, or Ba, using density functional calculations. We leverage as a driving force the electrostatic interactions between charged [LaO] 1+ and neutral [AO] 0 planes to inductively tune the Ni–O bond distortions, without intentional doping or epitaxial strain, altering the correlated d-orbital energies. We use this strategy to design cation ordered LaCaNiO 4 and LaBaNiO 4 with distortions favoring enhanced Ni e g orbital polarization, and find local electronic structure signatures analogous to those in RP La-cuprates, i.e., parent phases of the high-temperature superconducting oxides

  5. Tuning the properties of an MgO layer for spin-polarized electron transport

    Science.gov (United States)

    Zhao, Chong-Jun; Ding, Lei; Zhao, Zhi-Duo; Zhang, Peng; Cao, Xing-Zhong; Wang, Bao-Yi; Zhang, Jing-Yan; Yu, Guang-Hua

    2014-08-01

    The influence of substrate temperature and annealing on quality/microstructural evolution of MgO, as well as the resultant magnetoresistance (MR) ratio, has been investigated. It has been found that the crystallinity of MgO in the MgO/NiFe/MgO heterostructures gradually improves with increasing substrate temperature. This behavior facilitates the transport of spin-polarized electrons, resulting in a high MR value. After annealing, the formation of vacancy clusters in MgO layers observed through positron annihilation spectroscopy leads to an increase in MR at different levels because of the crystallinity improvement of MgO. However, these vacancy clusters as another important defect can limit further improvement in MR.

  6. Laser Structuring of Thin Layers for Flexible Electronics by a Shock Wave-induced Delamination Process

    Science.gov (United States)

    Lorenz, Pierre; Ehrhardt, Martin; Zimmer, Klaus

    The defect-free laser-assisted structuring of thin films on flexible substrates is a challenge for laser methods. However, solving this problem exhibits an outstanding potential for a pioneering development of flexible electronics. Thereby, the laser-assisted delamination method has a great application potential. At the delamination process: the localized removal of the layer is induced by a shock wave which is produced by a laser ablation process on the rear side of the substrate. In this study, the thin-film patterning process is investigated for different polymer substrates dependent on the material and laser parameters using a KrF excimer laser. The resultant structures were studied by optical microscopy and white light interferometry (WLI). The delamination process was tested at different samples (indium tin oxide (ITO) on polyethylene terephthalate (PET), epoxy-based negative photoresist (SU8) on polyimide (PI) and indium tin oxide/copper indium gallium selenide/molybdenum (ITO/CIGS/Mo) on PI.

  7. Inductive crystal field control in layered metal oxides with correlated electrons

    Energy Technology Data Exchange (ETDEWEB)

    Balachandran, P. V.; Cammarata, A.; Rondinelli, J. M., E-mail: jrondinelli@nortwestern.edu [Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104 (United States); Nelson-Cheeseman, B. B. [School of Engineering, University of St. Thomas, St. Paul, Minnesota 55105 (United States); Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Bhattacharya, A. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

    2014-07-01

    We show that the NiO{sub 6} crystal field energies can be tailored indirectly via heterovalent A cation ordering in layered (La,A)NiO{sub 4} Ruddlesden–Popper (RP) oxides, where A = Sr, Ca, or Ba, using density functional calculations. We leverage as a driving force the electrostatic interactions between charged [LaO]{sup 1+} and neutral [AO]{sup 0} planes to inductively tune the Ni–O bond distortions, without intentional doping or epitaxial strain, altering the correlated d-orbital energies. We use this strategy to design cation ordered LaCaNiO{sub 4} and LaBaNiO{sub 4} with distortions favoring enhanced Ni e{sub g} orbital polarization, and find local electronic structure signatures analogous to those in RP La-cuprates, i.e., parent phases of the high-temperature superconducting oxides.

  8. Electronic transport and dielectric properties of low-dimensional structures of layered transition metal dichalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Ashok, E-mail: ashok.1777@yahoo.com; Ahluwalia, P.K., E-mail: pk_ahluwalia7@yahoo.com

    2014-02-25

    Graphical abstract: We present electronic transport and dielectric response of layered transition metal dichalcogenides nanowires and nanoribbons. Illustration 1: Conductance (G) and corresponding local density of states(LDOS) for LTMDs wires at applied bias. I–V characterstics are shown in lowermost panels. Highlights: • The studied configurations show metallic/semiconducting nature. • States around the Fermi energy are mainly contributed by the d orbitals of metal atoms. • The studied configurations show non-linear current–voltage (I–V) characteristics. • Additional plasmonic features at low energy have been observed for both wires and ribbons. • Dielectric functions for both wires and ribbons are anisotropic (isotropic) at low (high) energy range. -- Abstract: We present first principle study of the electronic transport and dielectric properties of nanowires and nanoribbons of layered transition metal dichalcogenides (LTMDs), MX{sub 2} (M = Mo, W; X = S, Se, Te). The studied configuration shows metallic/semiconducting nature and the states around the Fermi energy are mainly contributed by the d orbitals of metal atoms. Zero-bias transmission show 1G{sub 0} conductance for the ribbons of MoS{sub 2} and WS{sub 2}; 2G{sub 0} conductance for MoS{sub 2}, WS{sub 2}, WSe{sub 2} wires, and ribbons of MoTe{sub 2} and WTe{sub 2}; and 3G{sub 0} conductance for WSe{sub 2} ribbon. The studied configurations show non-linear current–voltage (I–V) characteristics. Negative differential conductance (NDC) has also been observed for the nanoribbons of the selenides and tellurides of both Mo and W. Furthermore, additional plasmonic features below 5 eV energy have been observed for both wires and ribbons as compared to the corresponding monolayers, which is found to be red-shifted on going from nanowires to nanoribbons.

  9. Roll-to-roll atomic layer deposition process for flexible electronics encapsulation applications

    International Nuclear Information System (INIS)

    Maydannik, Philipp S.; Kääriäinen, Tommi O.; Lahtinen, Kimmo; Cameron, David C.; Söderlund, Mikko; Soininen, Pekka; Johansson, Petri; Kuusipalo, Jurkka; Moro, Lorenza; Zeng, Xianghui

    2014-01-01

    At present flexible electronic devices are under extensive development and, among them, flexible organic light-emitting diode displays are the closest to a large market deployment. One of the remaining unsolved challenges is high throughput production of impermeable flexible transparent barrier layers that protect sensitive light-emitting materials against ambient moisture. The present studies deal with the adaptation of the atomic layer deposition (ALD) process to high-throughput roll-to-roll production using the spatial ALD concept. We report the development of such a process for the deposition of 20 nm thickness Al 2 O 3 diffusion barrier layers on 500 mm wide polymer webs. The process uses trimethylaluminum and water as precursors at a substrate temperature of 105 °C. The observation of self-limiting film growth behavior and uniformity of thickness confirms the ALD growth mechanism. Water vapor transmission rates for 20 nm Al 2 O 3 films deposited on polyethylene naphthalate (PEN) substrates were measured as a function of substrate residence time, that is, time of exposure of the substrate to one precursor zone. Moisture permeation levels measured at 38 °C/90% relative humidity by coulometric isostatic–isobaric method were below the detection limit of the instrument ( −4  g/m 2 day) for films coated at web moving speed of 0.25 m/min. Measurements using the Ca test indicated water vapor transmission rates ∼5 × 10 −6 g/m 2 day. Optical measurements on the coated web showed minimum transmission of 80% in the visible range that is the same as the original PEN substrate

  10. Roll-to-roll atomic layer deposition process for flexible electronics encapsulation applications

    Energy Technology Data Exchange (ETDEWEB)

    Maydannik, Philipp S., E-mail: philipp.maydannik@lut.fi; Kääriäinen, Tommi O.; Lahtinen, Kimmo; Cameron, David C. [Advanced Surface Technology Research Laboratory, Lappeenranta University of Technology, Sammonkatu 12, 50130 Mikkeli (Finland); Söderlund, Mikko; Soininen, Pekka [Beneq Oy, P.O. Box 262, 01511 Vantaa (Finland); Johansson, Petri; Kuusipalo, Jurkka [Tampere University of Technology, Paper Converting and Packaging Technology, P.O. Box 589, 33101 Tampere (Finland); Moro, Lorenza; Zeng, Xianghui [Samsung Cheil Industries, San Jose R and D Center, 2186 Bering Drive, San Jose, California 95131 (United States)

    2014-09-01

    At present flexible electronic devices are under extensive development and, among them, flexible organic light-emitting diode displays are the closest to a large market deployment. One of the remaining unsolved challenges is high throughput production of impermeable flexible transparent barrier layers that protect sensitive light-emitting materials against ambient moisture. The present studies deal with the adaptation of the atomic layer deposition (ALD) process to high-throughput roll-to-roll production using the spatial ALD concept. We report the development of such a process for the deposition of 20 nm thickness Al{sub 2}O{sub 3} diffusion barrier layers on 500 mm wide polymer webs. The process uses trimethylaluminum and water as precursors at a substrate temperature of 105 °C. The observation of self-limiting film growth behavior and uniformity of thickness confirms the ALD growth mechanism. Water vapor transmission rates for 20 nm Al{sub 2}O{sub 3} films deposited on polyethylene naphthalate (PEN) substrates were measured as a function of substrate residence time, that is, time of exposure of the substrate to one precursor zone. Moisture permeation levels measured at 38 °C/90% relative humidity by coulometric isostatic–isobaric method were below the detection limit of the instrument (<5 × 10{sup −4} g/m{sup 2} day) for films coated at web moving speed of 0.25 m/min. Measurements using the Ca test indicated water vapor transmission rates ∼5 × 10{sup −6} g/m{sup 2} day. Optical measurements on the coated web showed minimum transmission of 80% in the visible range that is the same as the original PEN substrate.

  11. Performance and combustion analysis of Mahua biodiesel on a single cylinder compression ignition engine using electronic fuel injection system

    Directory of Open Access Journals (Sweden)

    Gunasekaran Anandkumar

    2016-01-01

    Full Text Available In this investigation, experiment is carried out on a 1500 rpm constant speed single cylinder Diesel engine. The test is carried out with Neat diesel, neat biodiesel, and blend B20. The engine considered was run with electronic fuel injection system supported by common rail direct injection to obtain high atomization and effective air utilization inside the combustion chamber. The performance of the engine in terms of break thermal efficiency and brake specific energy consumption was found and compared. The B20 blend shows 1.11% decrease in break thermal efficiency and 3.35% increase in brake specific energy consumption than diesel. The combustion characteristics found are in-cylinder pressure, rate of pressure rise, and heat release rate and compared for peak pressure load to understand the nature of combustion process. For each fuel test run, the maximum peak pressure is observed at part load condition. The rate of change of pressure and heat release rate of diesel is high compared to pure biodiesel and B20 blend. The diffusion combustion is observed to be predominant in case of B100 than B20 and Neat diesel.

  12. Role of the polymeric hole injection layer on the efficiency and stability of organic light emitting diodes with small molecular emitters

    International Nuclear Information System (INIS)

    Chin, Byung Doo

    2008-01-01

    In this paper, an improvement in the properties of the small molecular organic light emitting diode (OLED) upon application of a polymeric hole injection layer (HIL) was reported. The luminous efficiency, operating voltage and lifetime of devices with dye-doped small molecule emitters (fluorescent and phosphorescent) were found to be sensitive to the HIL/hole transport layer (HTL) combination used, where the improved injection and brightness was shown at the hole cascading structure and the longer lifetime behaviour was obtained at the hole-trapping structure. Use of a polymeric HIL significantly increased the luminous current efficiency and lifetime for both fluorescent blue and phosphorescent green/red light emitters. The polymeric HIL was effective in terms of the driving characteristics of phosphorescent OLED, since it provides higher brightness behaviour at lower current density. The apparent shade of the pixel image at light emission, which will probably induce degradation at the pixel wall interface, will be suppressed by the use of polymeric HIL. In spite of the ambiguity in the formation of such shaded pixels and their influence at the decay of OLED, intrinsic stability of polymeric HIL/anode would be advantageous for stable storage and operation of devices.

  13. Atomic layer deposition in nanostructured photovoltaics: tuning optical, electronic and surface properties

    Science.gov (United States)

    Palmstrom, Axel F.; Santra, Pralay K.; Bent, Stacey F.

    2015-07-01

    Nanostructured materials offer key advantages for third-generation photovoltaics, such as the ability to achieve high optical absorption together with enhanced charge carrier collection using low cost components. However, the extensive interfacial areas in nanostructured photovoltaic devices can cause high recombination rates and a high density of surface electronic states. In this feature article, we provide a brief review of some nanostructured photovoltaic technologies including dye-sensitized, quantum dot sensitized and colloidal quantum dot solar cells. We then introduce the technique of atomic layer deposition (ALD), which is a vapor phase deposition method using a sequence of self-limiting surface reaction steps to grow thin, uniform and conformal films. We discuss how ALD has established itself as a promising tool for addressing different aspects of nanostructured photovoltaics. Examples include the use of ALD to synthesize absorber materials for both quantum dot and plasmonic solar cells, to grow barrier layers for dye and quantum dot sensitized solar cells, and to infiltrate coatings into colloidal quantum dot solar cell to improve charge carrier mobilities as well as stability. We also provide an example of monolayer surface modification in which adsorbed ligand molecules on quantum dots are used to tune the band structure of colloidal quantum dot solar cells for improved charge collection. Finally, we comment on the present challenges and future outlook of the use of ALD for nanostructured photovoltaics.

  14. Contribution of electron microscopy to the study of alteration layers formed on the surface of glasses

    International Nuclear Information System (INIS)

    Crovisier, J.L.; Eberhart, J.P.

    1985-01-01

    In order to understand the whole process of glass corrosion in aqueous solutions, the analysis of the reagent must be completed by a study of the actual alteration layers on the glass surface. Transmission electron microscopy on ultramicrotomic thin sections turns out to be a most suitable tool to achieve this. It enables to supplement the conventional methods of surface investigation, such as A.E.S., ESCA, IRRS, SIMS. Two examples are given. The first deals with a (SiO 2 -CaO-Na 2 O-P 2 O 5 )- glass leached in a buffer solution of tris-hydromethyl-aminomethane at 40 0 C. The major feature is ion exchange within a residual porous glass, followed by the precipitation of hydroxyapatite. In the second example, a basaltic glass is altered in sea-water at 50 0 C. The glass constituents are dissolved simultaneously and the alteration layer is a precipitate of crystalline and amorphous phases which have reached their saturation level [fr

  15. Towards molecular doping effect on the electronic properties of two-dimensional layered materials

    International Nuclear Information System (INIS)

    Arramel; Wang, Q.; Zheng, Y.; Zhang, W.; Wee, A. T. S.

    2016-01-01

    In recent advancements of an atomically-thick, flat, and flexible two-dimensional (2D) material has attracted tremendous interest. Graphene and 2D layered semiconductors such as transition-metal dichalcogenides (TMDs) pave the way on the exploration of their unique layer-number dependent electronic and optical properties. The latter have a promising future on the microelectronics due to their sizeable bandgaps, i.e., the crossover from indirect-direct bandgap transition occurs as the thickness of TMDs is decreased to a monolayer. In this work, we systematically investigated the optimum growth parameter of chemical vapor deposition of MoS2 and WSe2, respectively. It turns out that the temperature and the duration growth plays role to produce a large area of TMDs monolayers. Our studies suggest that a well-controlled high quality of TMDs could serves as template and interlayer in the TMD-organic heterointerfaces. Thus it is potentially an attractive approach towards a wide-ranging application in optoelectronics, nanoelectronics and energy-harvesting applications. (paper)

  16. Electronic structure properties of the In(Ga)As/GaAs quantum dot–quantum well tunnel-injection system

    International Nuclear Information System (INIS)

    Sęk, Grzegorz; Andrzejewski, Janusz; Ryczko, Krzysztof; Poloczek, Przemysław; Misiewicz, Jan; Semenova, Elizaveta S; Lemaitre, Aristide; Patriarche, Gilles; Ramdane, Aberrahim

    2009-01-01

    We report on the electronic properties of GaAs-substrate-based structures designed as a tunnel-injection system composed of self-assembled InAs quantum dots and an In 0.3 Ga 0.7 As quantum well separated by a GaAs barrier. We have performed photoluminescence and photoreflectance measurements which have allowed the determination of the optical transitions in the QW–QD tunnel structure and its respective references with just quantum dots or a quantum well. The effective mass calculations of the band structure dependence on the tunnelling barrier thickness have shown that in spite of an expected significant tunnelling between both parts of the system, its strong asymmetry and the strain distribution cause that the quantum-mechanical-coupling-induced energy shift of the optical transitions is almost negligible for the lowest energy states and weakly sensitive to the width of the barrier, which finds confirmation in the existing experimental data

  17. Magnetooptic effects and Auger electron spectroscopy of two-layer NiFe-Dy and Fe-Dy films with nonuniform layers

    International Nuclear Information System (INIS)

    Ehdel'man, I.S.; Markov, V.V.; Khudyakov, A.E.; Ivantsov, R.D.; Bondarenko, G.V.; Ovchinnikov, S.G.; Kesler, V.G.; Parshin, A.S.; Ronzhin, I.P.

    2001-01-01

    Magneto-optical effects (magnetic circular dichroism and meridional Kerr effect) and element distribution with layer thickness in two-layer NiFe-Dy and Fe-Dy films, prepared by thermal sputtering of component in ultrahigh vacuum, are investigated. It is shown, that Dy in a two-layer film in the temperature range of 80-300 K makes constant contributions to both effects investigated which are approximately equal to the values of the effects observed in an isolated Dy film only at temperatures below the temperature T c of Dy transition into a ferromagnetic state (T c ∼ 100 K for the films under study). This behaviour of magneto-optical effects is assumed to be due to the influence of a NiFe layer spin system on magnetic state of a Dy layer, this influence is enhanced by the deep penetration of Ni and Fe ions into Dy layer as it follows from the data obtained using Auger electron spectroscopy [ru

  18. Improved light emission from n-ZnO/p-Si heterojunction with HfO{sub 2} as an electron blocking layer

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Zhao; Li, Borui [Key Lab of Artificial Micro- and Nano- structures of Ministry of Education of China, Department of Electronic Science and Technology, School of Physics and Technology, Wuhan University, Wuhan 430072 (China); Mo, Xiaoming [School of Physical Science and Technology, Guangxi University, Nanning, Guangxi 530004 (China); Zhou, Kai [Key Lab of Artificial Micro- and Nano- structures of Ministry of Education of China, Department of Electronic Science and Technology, School of Physics and Technology, Wuhan University, Wuhan 430072 (China); Li, Songzhan [School of Electronic and Electrical Engineering, Wuhan Textile University, Wuhan 430073 (China); Song, Zengcai; Lei, Hongwei; Wen, Jian; Zhu, Ziqiang [Key Lab of Artificial Micro- and Nano- structures of Ministry of Education of China, Department of Electronic Science and Technology, School of Physics and Technology, Wuhan University, Wuhan 430072 (China); Fang, Guojia, E-mail: gjfang@whu.edu.cn [Key Lab of Artificial Micro- and Nano- structures of Ministry of Education of China, Department of Electronic Science and Technology, School of Physics and Technology, Wuhan University, Wuhan 430072 (China)

    2017-04-15

    Light-emitting diodes (LEDs) based on ZnO were fabricated on a p-Si substrate by using a pulsed laser deposition system. Significant electroluminescence (EL) improvement was demonstrated with the insertion of an HfO{sub 2} electron blocking layer (EBL) in n-ZnO/p-Si heterojunctions. Distinct near-band-edge emission at around 392 nm accompanying by a broadly strong visible emission was achieved when a proper thickness of HfO{sub 2} EBL was used. Current-voltage and capacitance-voltage measurements confirmed that a proper thickness of the HfO{sub 2} EBL can effectively balance the injection of electrons and holes, resulting in an increase of radiative recombination in the ZnO active layer and thus enhancing the EL performance of the devices. Five independent emissions corresponding to five different transition processes were proposed to clarify the EL origination of the n-ZnO/HfO{sub 2}/p-Si heterojunction LEDs by Gaussian deconvolutions. It is hoped that results in this work should be helpful for the development of ZnO-based LEDs that can integrate ZnO with the Si planar technology.

  19. Improved efficiency of NiOx-based p-i-n perovskite solar cells by using PTEG-1 as electron transport layer

    NARCIS (Netherlands)

    Groeneveld, Bart G. H. M.; Najafi, Mehrdad; Steensma, Bauke; Adjokatse, Sampson; Fang, Hong-Hua; Jahani, Fatemeh; Qiu, Li; ten Brink, Gert H.; Hummelen, Jan C.; Loi, Maria Antonietta

    We present efficient p-i-n type perovskite solar cells using NiOx as the hole transport layer and a fulleropyrrolidine with a triethylene glycol monoethyl ether side chain (PTEG-1) as electron transport layer. This electron transport layer leads to higher power conversion efficiencies compared to

  20. Wetting layer effect on impurity-related electronic properties of different (In,Ga)N QD-shapes

    Science.gov (United States)

    El Ghazi, Haddou; Jorio, Anouar; Zorkani, Izeddine; Feddi, El Mustapha; El Mouchtachi, Ahmed

    2018-05-01

    In this paper, we have investigated the electronic properties of (In,Ga)N/GaN coupled wetting layer-quantum dot system using the numerical approach. The finite element method code is used to solve the Schrödinger equation, in the presence of the impurity. In our model, parallelepiped-shape, circular and square based-pyramidal and their wetting layers embedded in GaN matrix were considered. Based on the single band parabolic and the effective mass approximations, the envelop function and its corresponding energy eigenvalue are obtained assuming a finite potential barrier. Our results reveal that: (1) the wetting layer has a great influence on the electronic properties especially for a small quantum dot and acts in the opposite sense of the geometrical confinement, (2) a wetting layer-dependent critical QD-size is obtained limiting two different behaviors and (3) its effect is strongly-dependent on the quantum dot-shape.

  1. Comparison of Electronic Structure and Magnetic Properties of Few Layer Graphene and Multiwall Carbon Nanotubes

    Directory of Open Access Journals (Sweden)

    Sekhar Chandra Ray

    2016-01-01

    Full Text Available A comparative study has been made for the non-catalyst based few layer graphene (FLG and Fe-catalyst based multiwall carbon nanotubes (MWCNTs. Magnetic and electronic properties of FLG and MWCNTs were studied using magnetic M-H hysteresis loops and synchrotron radiation based X-ray absorption fine structure spectroscopy measurements. Structural defects and electronic and bonding properties of FLG/MWCNTs have been studied using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS, and ultraviolet photoelectron spectroscopy (UPS. The work functions of FLG and MWCNTs are 4.01 eV and 3.79 eV, respectively, obtained from UPS (He-I spectra. UPS (He-II results suggest that the density of states (DOS of MWCNTs is higher than FLG and is consistent with Raman spectroscopy result that shows the defect of MWCNTs is higher than FLG. The magnetic coercivity (Hc of the MWCNTs (~750 Oe is higher than FLG (~85 Oe which could be used for various technological magnetic applications.

  2. Local Electronic Structure of a Single-Layer Porphyrin-Containing Covalent Organic Framework

    KAUST Repository

    Chen, Chen

    2017-12-20

    We have characterized the local electronic structure of a porphyrin-containing single-layer covalent organic framework (COF) exhibiting a square lattice. The COF monolayer was obtained by the deposition of 2,5-dimethoxybenzene-1,4-dicarboxaldehyde (DMA) and 5,10,15,20-tetrakis(4-aminophenyl) porphyrin (TAPP) onto a Au(111) surface in ultrahigh vacuum followed by annealing to facilitate Schiff-base condensations between monomers. Scanning tunneling spectroscopy (STS) experiments conducted on isolated TAPP precursor molecules and the covalently linked COF networks yield similar transport (HOMO-LUMO) gaps of 1.85 ± 0.05 eV and 1.98 ± 0.04 eV, respectively. The COF orbital energy alignment, however, undergoes a significant downward shift compared to isolated TAPP molecules due to the electron-withdrawing nature of the imine bond formed during COF synthesis. Direct imaging of the COF local density of states (LDOS) via dI/dV mapping reveals that the COF HOMO and LUMO states are localized mainly on the porphyrin cores and that the HOMO displays reduced symmetry. DFT calculations reproduce the imine-induced negative shift in orbital energies and reveal that the origin of the reduced COF wave function symmetry is a saddle-like structure adopted by the porphyrin macrocycle due to its interactions with the Au(111) substrate.

  3. Electron mobility in the inversion layers of fully depleted SOI films

    Energy Technology Data Exchange (ETDEWEB)

    Zaitseva, E. G., E-mail: ZaytsevaElza@yandex.ru; Naumova, O. V.; Fomin, B. I. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2017-04-15

    The dependences of the electron mobility μ{sub eff} in the inversion layers of fully depleted double–gate silicon-on-insulator (SOI) metal–oxide–semiconductor (MOS) transistors on the density N{sub e} of induced charge carriers and temperature T are investigated at different states of the SOI film (inversion–accumulation) from the side of one of the gates. It is shown that at a high density of induced charge carriers of N{sub e} > 6 × 10{sup 12} cm{sup –2} the μeff(T) dependences allow the components of mobility μ{sub eff} that are related to scattering at surface phonons and from the film/insulator surface roughness to be distinguished. The μ{sub eff}(N{sub e}) dependences can be approximated by the power functions μ{sub eff}(N{sub e}) ∝ N{sub e}{sup −n}. The exponents n in the dependences and the dominant mechanisms of scattering of electrons induced near the interface between the SOI film and buried oxide are determined for different N{sub e} ranges and film states from the surface side.

  4. DNA in glasses at 77 K: high energy ionizing radiation versus UV electron injection

    International Nuclear Information System (INIS)

    Malone, M.E.; Parker, A.W.

    1994-01-01

    Most in the field of ionizing radiation damage to DNA in frozen aqueous solutions agree that two major types of radical ions are formed, i.e. . G + / . A + and . T - / . C - . The main evidence stems from EPR and strand break studies. Fluid solutions exposed to laser light are known to give G .+ and e solv - with low yields of single strand breaks. We have explored this contrast by photoionizing DNA solutions at 77 K, in the expectation that this would prevent the formation of e solv - and hence that the results might be similar to those for high energy radiation. They are not: the results show only the formation of G .+ (or) A .+ , the fate of the ejected electrons is unclear except for sodium perchlorate glasses when they react to give O .- . (Author)

  5. Real-time observation of ultrafast electron injection at graphene–Zn porphyrin interfaces

    KAUST Repository

    Masih, Dilshad

    2015-02-25

    We report on the ultrafast interfacial electron transfer ( ET) between zinc( II) porphyrin ( ZnTMPyP) and negatively charged graphene carboxylate ( GC) using state- of- the- art femtosecond laser spectroscopy with broadband capabilities. The steady- state interaction between GC and ZnTMPyP results in a red- shifted absorption spectrum, providing a clear indication for the binding affinity between ZnTMPyP and GC via electrostatic and p- p stacking interactions. Ultrafast transient absorption ( TA) spectra in the absence and presence of three different GC concentrations reveal ( i) the ultrafast formation of singlet excited ZnTMPyP*, which partially relaxes into a long- lived triplet state, and ( ii) ET from the singlet excited ZnTMPyP* to GC, forming ZnTMPyP + and GC , as indicated by a spectral feature at 650- 750 nm, which is attributed to a ZnTMPyP radical cation resulting from the ET process.

  6. Ultrafast triggered transient energy storage by atomic layer deposition into porous silicon for integrated transient electronics

    Science.gov (United States)

    Douglas, Anna; Muralidharan, Nitin; Carter, Rachel; Share, Keith; Pint, Cary L.

    2016-03-01

    Here we demonstrate the first on-chip silicon-integrated rechargeable transient power source based on atomic layer deposition (ALD) coating of vanadium oxide (VOx) into porous silicon. A stable specific capacitance above 20 F g-1 is achieved until the device is triggered with alkaline solutions. Due to the rational design of the active VOx coating enabled by ALD, transience occurs through a rapid disabling step that occurs within seconds, followed by full dissolution of all active materials within 30 minutes of the initial trigger. This work demonstrates how engineered materials for energy storage can provide a basis for next-generation transient systems and highlights porous silicon as a versatile scaffold to integrate transient energy storage into transient electronics.Here we demonstrate the first on-chip silicon-integrated rechargeable transient power source based on atomic layer deposition (ALD) coating of vanadium oxide (VOx) into porous silicon. A stable specific capacitance above 20 F g-1 is achieved until the device is triggered with alkaline solutions. Due to the rational design of the active VOx coating enabled by ALD, transience occurs through a rapid disabling step that occurs within seconds, followed by full dissolution of all active materials within 30 minutes of the initial trigger. This work demonstrates how engineered materials for energy storage can provide a basis for next-generation transient systems and highlights porous silicon as a versatile scaffold to integrate transient energy storage into transient electronics. Electronic supplementary information (ESI) available: (i) Experimental details for ALD and material fabrication, ellipsometry film thickness, preparation of gel electrolyte and separator, details for electrochemical measurements, HRTEM image of VOx coated porous silicon, Raman spectroscopy for VOx as-deposited as well as annealed in air for 1 hour at 450 °C, SEM and transient behavior dissolution tests of uniformly coated VOx on

  7. Near-GeV-energy laser-wakefield acceleration of self-injected electrons in a centimeter-scale plasma channel

    International Nuclear Information System (INIS)

    Tsung, F.S.; Narang, Ritesh; Joshi, C.; Mori, W. B.; Fonseca, R. A.; Silva, L.O.

    2004-01-01

    The first three-dimensional, particle-in-cell (PIC) simulations of laser-wakefield acceleration of self-injected electrons in a 0.84 cm long plasma channel are reported. The frequency evolution of the initially 50 fs (FWHM) long laser pulse by photon interaction with the wake followed by plasma dispersion enhances the wake which eventually leads to self-injection of electrons from the channel wall. This first bunch of electrons remains spatially highly localized. Its phase space rotation due to slippage with respect to the wake leads to a monoenergetic bunch of electrons with a central energy of 0.26 GeV after 0.55 cm propagation. At later times, spatial bunching of the laser enhances the acceleration of a second bunch of electrons to energies up to 0.84 GeV before the laser pulse intensity is significantly reduced

  8. Electronic and optical properties of vacancy defects in single-layer transition metal dichalcogenides

    Science.gov (United States)

    Khan, M. A.; Erementchouk, Mikhail; Hendrickson, Joshua; Leuenberger, Michael N.

    2017-06-01

    A detailed first-principles study has been performed to evaluate the electronic and optical properties of single-layer (SL) transition metal dichalcogenides (TMDCs) (M X 2 ; M = transition metal such as Mo, W, and X = S, Se, Te), in the presence of vacancy defects (VDs). Defects usually play an important role in tailoring electronic, optical, and magnetic properties of semiconductors. We consider three types of VDs in SL TMDCs: (i) X vacancy, (ii) X2 vacancy, and (iii) M vacancy. We show that VDs lead to localized defect states (LDS) in the band structure, which in turn gives rise to sharp transitions in in-plane and out-of-plane optical susceptibilities, χ∥ and χ⊥. The effects of spin-orbit coupling (SOC) are also considered. We find that SOC splitting in LDS is directly related to the atomic number of the transition metal atoms. Apart from electronic and optical properties we also find magnetic signatures (local magnetic moment of ˜μB ) in MoSe2 in the presence of the Mo vacancy, which breaks the time-reversal symmetry and therefore lifts the Kramers degeneracy. We show that a simple qualitative tight-binding model (TBM), involving only the hopping between atoms surrounding the vacancy with an on-site SOC term, is sufficient to capture the essential features of LDS. In addition, the existence of the LDS can be understood from the solution of the two-dimensional Dirac Hamiltonian by employing infinite mass boundary conditions. In order to provide a clear description of the optical absorption spectra, we use group theory to derive the optical selection rules between LDS for both χ∥ and χ⊥.

  9. Electron-transporting layer doped with cesium azide for high-performance phosphorescent and tandem white organic light-emitting devices

    International Nuclear Information System (INIS)

    Yu, Yaoyao; Chen, Xingming; Jin, Yu; Wu, Zhijun; Yu, Ye; Lin, Wenyan; Yang, Huishan

    2017-01-01

    Cesium azide was employed as an effective n-dopant in the electron-transporting layer (ETL) of organic light-emitting devices (OLEDs) owing to its low deposition temperature and high ambient stability. By doping cesium azide onto 4,7-diphenyl-1,10-phenanthroline, a green phosphorescent OLED having best efficiencies of 66.25 cd A −1 , 81.22 lm W −1 and 18.82% was realized. Moreover, the efficiency roll-off from 1000 cd m −2 to 10 000 cd m −2 is only 12.9%, which is comparable with or even lower than that of devices utilizing the co-host system. Physical mechanisms for the improvement of device performance were studied in depth by analyzing the current density–voltage ( J – V ) characteristics of the electron-only devices. In particular, by comparing the J – V characteristics of the electron-only devices instead of applying the complicated ultraviolet photoelectron spectrometer measurements, we deduced the decrease in barrier height for electron injection at the ETL/cathode contact. Finally, an efficient tandem white OLED utilizing the n-doped layer in the charge generation unit (CGU) was constructed. As far as we know, this is the first report on the application of this CGU for fabricating tandem white OLEDs. The emissions of the tandem device are all in the warm white region from 1213 cd m −2 to 10870 cd m −2 , as is beneficial to the lighting application. (paper)

  10. Hole and electron extraction layers based on graphene oxide derivatives for high-performance bulk heterojunction solar cells.

    Science.gov (United States)

    Liu, Jun; Xue, Yuhua; Gao, Yunxiang; Yu, Dingshan; Durstock, Michael; Dai, Liming

    2012-05-02

    By charge neutralization of carboxylic acid groups in graphene oxide (GO) with Cs(2)CO(3) to afford Cesium-neutralized GO (GO-Cs), GO derivatives with appropriate modification are used as both hole- and electron-extraction layers for bulk heterojunction (BHJ) solar cells. The normal and inverted devices based on GO hole- and GO-Cs electron-extraction layers both outperform the corresponding standard BHJ solar cells. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Hole and electron extraction layers based on graphene oxide derivatives for high-performance bulk heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jun; Gao, Yunxiang; Yu, Dingshan; Dai, Liming [Center of Advanced Science and Engineering for Carbon, Department of Macromolecular, Science and Engineering, Case School of Engineering, Case Western Reserve University, Cleveland, Ohio (United States); Xue, Yuhua [Center of Advanced Science and Engineering for Carbon, Department of Macromolecular, Science and Engineering, Case School of Engineering, Case Western Reserve University, Cleveland, Ohio (United States); Institute of Advanced Materials for Nano-Bio Applications, School of Ophthalmology and Optometry, Wenzhou Medical College, Zhejiang 325027 (China); Durstock, Michael [Materials and Manufacturing Directorate, Air Force Research Laboratory, RXBP, Wright-Patterson Air Force Base, Ohio 45433 (United States)

    2012-05-02

    By charge neutralization of carboxylic acid groups in graphene oxide (GO) with Cs{sub 2}CO{sub 3} to afford Cesium-neutralized GO (GO-Cs), GO derivatives with appropriate modification are used as both hole- and electron-extraction layers for bulk heterojunction (BHJ) solar cells. The normal and inverted devices based on GO hole- and GO-Cs electron-extraction layers both outperform the corresponding standard BHJ solar cells. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Structure and Electronic Properties of In Situ Synthesized Single-Layer MoS2 on a Gold Surface

    DEFF Research Database (Denmark)

    Sørensen, Signe Grønborg; Füchtbauer, Henrik Gøbel; Tuxen, Anders Kyrme

    2014-01-01

    When transition metal sulfides such as MoS2 are present in the single-layer form, the electronic properties change in fundamental ways, enabling them to be used, e.g., in two-dimensional semiconductor electronics, optoelectronics, and light harvesting. The change is related to a subtle modification...... with scanning tunneling microscopy and X-ray photoelectron spectroscopy characterization of two-dimensional single-layer islands of MoS2 synthesized directly on a gold single crystal substrate. Thanks to a periodic modulation of the atom stacking induced by the lattice mismatch, we observe a structural buckling...

  13. Investigation of the stability of polysilicon layers in SOI-structures under irradiation by electrons and hard magnetic field influence

    Directory of Open Access Journals (Sweden)

    Khoverko Yu. N.

    2010-10-01

    Full Text Available The properties of recrystallized polysilicon on insulator layers of p-type conductive SOI-structures with different carrier concentration irradiated with high-energy electrons flow about 1017 сm–2 in temperature range 4,2—300 К and high magnetic fields were investigated. It was found that heavily doped laser recrystallized polysilicon on insulator layers show its radiation resistance under irradiation with high-energy electrons and magnetoresistance of such material remains quite low in magnetic field about 14 T does not exceed 1—2%. Such qulity can be applied in designing of microelectronic sensors of mechanical values operable in hard conditions of exploitation.

  14. Inverted bulk-heterojunction organic solar cell using chemical bath deposited titanium oxide as electron collection layer

    OpenAIRE

    Kuwabara, Takayuki; Sugiyama, Hirokazu; Kuzuba, Mitsuhiro  ; Yamaguchi, Takahiro; Takahashi, Kohshin

    2010-01-01

    Chemical bath deposited titanium oxide (TiOx ) as an electron collection layer is introduced between the organic layer and the indium tin oxide (ITO) electrode for improving the performance of inverted bulk-heterojunction organic thin film solar cells with 1 cm2 active area, where regioregular poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) were mainly used as the photo-active layer. The uniform and thin TiOx film was easily prepared onto the ITO electrode ...

  15. Plasma simulation by macroscale, electromagnetic particle code and its application to current-drive by relativistic electron beam injection

    International Nuclear Information System (INIS)

    Tanaka, M.; Sato, T.

    1985-01-01

    A new implicit macroscale electromagnetic particle simulation code (MARC) which allows a large scale length and a time step in multi-dimensions is described. Finite mass electrons and ions are used with relativistic version of the equation of motion. The electromagnetic fields are solved by using a complete set of Maxwell equations. For time integration of the field equations, a decentered (backward) finite differencing scheme is employed with the predictor - corrector method for small noise and super-stability. It is shown both in analytical and numerical ways that the present scheme efficiently suppresses high frequency electrostatic and electromagnetic waves in a plasma, and that it accurately reproduces low frequency waves such as ion acoustic waves, Alfven waves and fast magnetosonic waves. The present numerical scheme has currently been coded in three dimensions for application to a new tokamak current-drive method by means of relativistic electron beam injection. Some remarks of the proper macroscale code application is presented in this paper

  16. Strengthening effect of nano-scaled precipitates in Ta alloying layer induced by high current pulsed electron beam

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Guangze; Luo, Dian; Fan, Guohua [School of Material Science & Engineering, Harbin Institute of Technology, Harbin 150001 (China); Ma, Xinxin, E-mail: maxin@hit.edu.cn [State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001 (China); Wang, Liqin [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China)

    2017-05-01

    Highlights: • Ta alloying layer are fabricated by magnetron sputtering and high current pulsed electron beam. • Nano-scaled TaC precipitates forms within the δ-Fe grain after tempering treatment. • The mean diameter of TaC particles is about 5–8 nm. • The hardness of alloying layer increased by over 50% after formation of nano-scaled TaC particle. - Abstract: In this study, the combination of magnetron sputtering and high current pulsed electron beam are used for surface alloying treatment of Ta film on high speed steel. And the Ta alloying layer is about 6 μm. After tempering treatment, TaC phase forms in Ta alloying layer when the treated temperature is over 823 K. Through the TEM and HRTEM observation, a large amount of nano-scaled precipitates (mean diameter 5–8 nm) form within the δ-Fe grain in Ta alloying layer after tempering treatment and these nano-scaled precipitates are confirmed as TaC particles, which contribute to the strengthening effect of the surface alloying layer. The hardness of tempered alloying layer can reach to 18.1 GPa when the treated temperature is 823 K which increase by 50% comparing with the untreated steel sample before surface alloying treatment.

  17. Patient assessment of an electronic device for subcutaneous self-injection of interferon ß-1a for multiple sclerosis: an observational study in the UK and Ireland

    Directory of Open Access Journals (Sweden)

    D'Arcy C

    2012-01-01

    Full Text Available Caroline D’Arcy1, Del Thomas2, Dee Stoneman3, Laura Parkes31West London Neuroscience Centre, Charing Cross Hospital, London, UK; 2Wye Valley NHS Trust, Hereford, UK; 3Merck Serono Ltd, Feltham, Middlesex, UKBackground: Injectable disease-modifying drugs (DMDs reduce the number of relapses and delay disability progression in patients with relapsing–remitting multiple sclerosis (RRMS. Regular self-injection can be stressful and impeded by MS symptoms. Auto-injection devices can simplify self-injection, overcome injection-related issues, and increase treatment satisfaction. This study investigated patient responses to an electronic auto-injection device.Methods: Patients with RRMS (n = 63, aged 18–65 years, naïve to subcutaneous (sc interferon (IFN ß-1a therapy, were recruited to a Phase IV, observational, open-label, multicenter study (NCT01195870. Patients self-injected sc IFN ß-1a using the RebiSmart™ (Merck Serono S.A. – Geneva, Switzerland electronic auto-injector for 12 weeks, including an initial titration period if recommended by the prescribing physician. In week 12, patients completed a questionnaire comprising of a visual analog scale (VAS to rate how much they liked using the device, a four-point response question on ease of use (‘very difficult’, ‘difficult’, ‘easy’, or ‘very easy’, and a list of ten device functions to rank, based upon their experiences.Results: Six patients (9.5% discontinued the study: one switched to manual injection; two discontinued all treatment; three changed therapy. In total, 59 out of 63 patients (93.7% completed the VAS; 54 out of 59 (91.5%; 95% confidence interval: 81.3%–97.2% ‘liked’ using the electronic auto-injector (score ≥6, whereas 57 out of 59 (96.6% rated the device overall as ‘easy’ or ‘very easy’ to use. Device features rated as most useful were the hidden needle (mean [standard deviation] score: 3.3 [3.01]; n = 56, confirmation sound (3.9 [2.45], and

  18. Physics of the current injection process during localized helicity injection

    Science.gov (United States)

    Hinson, Edward Thomas

    An impedance model has been developed for the arc-plasma cathode electron current source used in localized helicity injection tokamak startup. According to this model, a potential double layer (DL) is established between the high-density arc plasma (narc ˜ 1021 m-3) in the electron source, and the less-dense external tokamak edge plasma (nedge ˜ 10 18 m-3) into which current is injected. The DL launches an electron beam at the applied voltage with cross-sectional area close to that of the source aperture: Ainj ≈ 2 cm 2. The injected current, Iinj, increases with applied voltage, Vinj, according to the standard DL scaling, Iinj ˜ V(3/2/ inj), until the more restrictive of two limits to beam density nb arises, producing Iinj ˜ V(1/2/inj), a scaling with beam drift velocity. For low external tokamak edge density nedge, space-charge neutralization of the intense electron beam restricts the injected beam density to nb ˜ nedge. At high Jinj and sufficient edge density, the injected current is limited by expansion of the DL sheath, which leads to nb ˜ narc. Measurements of narc, Iinj , nedge, Vinj, support these predicted scalings, and suggest narc as a viable control actuator for the source impedance. Magnetic probe signals ≈ 300 degrees toroidally from the injection location are consistent with expectations for a gyrating, coherent electron beam with a compact areal cross-section. Technological development of the source has allowed an extension of the favorable Iinj ˜ V(1/2/inj) to higher power without electrical breakdown.

  19. Theoretical study of thin metallic deposit layers: from electronic structure to kinetics

    International Nuclear Information System (INIS)

    Senhaji, Abdelali

    1993-01-01

    We have studied the relation between the equilibrium surface segregation in an alloy A c B 1-c and the kinetics of dissolution of a few metallic layers of A (or B) deposited on a B (or A) substrate. We used an energetic model derived from the electronic structure (T.B.I.M.) allowing us to study the surface segregation both in disordered and in ordered alloys. Moreover we have developed a kinetic model (K.T.B.I.M.) consistent with the TBIM energetic model to study the kinetics both of segregation and dissolution. This process has been applied to the Cu-Pt system for which Auger, LEED and photoemission experiments are in progress at L.U.R.E. Concerning the equilibrium surface segregation in the ordered state we have studied all the possible terminations for the (111) and (100) faces in the various ordered structures occurring on the F.C.C. lattice (L1 0 , L1 1 - L1 2 and L'). In particular we have determined the domain of (meta)stability of each termination, which is very useful to understand the competition between single and double steps in ordered alloys. Studying the kinetics of dissolution of a few layers of Cu (or Pt) deposited on the (111) or (100) face of a Pt (or Cu) substrate, we have shown the formation of surface compounds with a great variety of behaviours depending on the face or on the temperature. All these behaviours can be rationalized with the local equilibrium concept, which we have defined accurately within our model and which allows to connect the dissolution mode with the equilibrium segregation. (author) [fr

  20. Plasma and energetic electron flux variations in the Mercury 1 C event: Evidence for a magnetospheric boundary layer

    International Nuclear Information System (INIS)

    Christon, S.P.

    1989-01-01

    Near the outbound magnetopause crossing during the first encounter of Mariner 10 with the planet Mercury on March 29, 1974, large intensity, ∼ 6 s quasi-periodic variations in the intensity-time profile of the charged particle experiment's electron counting rate appeared as a series of peaks and valleys. The peaks have previously been interpreted as quasi-periodic burst sequences of mildly relativistic electrons, caused in one case by episodic ∼ 6-s magnetotail substorm reconnection events and in another case by multiple encounters with a substorm energized electron population drifting around Mercury with an ∼ 6 s drift period. In this paper, the authors offer a new and fundamentally different interpretation of the Mariner 10 energetic electron, plasma electron, and magnetic field data near the outbound magnetopause at Mercury 1. They show that magnetosheath-like boundary layer plasma was observed up to ∼ 360 km planetward of the dawn magnetopause crossing as sensed by the magnetometer. They show that observations of substorm enhanced > 35 keV electron flux (that previously interpreted as > 175 keV electrons) associated with the hot tenuous plasma sheet population were interleaved with ∼ 6 s period observations of a cold dense boundary layer plasma associated with a much lower > 35 keV electron flux. They argue that the ∼ 6 s temporal signature is due to variation of the thickness and/or position of the boundary layer plasma population. This explanation of the ∼ 6-s variations, based upon the analysis of the coincident responses of the magnetic field experiment and two independent charged particle instruments (at their highest temporal resolutions), finds a direct analogue in observations of Earth's magnetospheric boundary layer, although the time scales are significantly shorter at Mercury

  1. Improved hole-injection and power efficiency of organic light-emitting diodes using an ultrathin cerium fluoride buffer layer

    Science.gov (United States)

    Lu, Hsin-Wei; Kao, Po-Ching; Chu, Sheng-Yuan

    2016-09-01

    In this study, the efficiency of organic light-emitting diodes (OLEDs) was enhanced by depositing a CeF3 film as an ultra-thin buffer layer between the ITO and NPB hole transport layer, with the structure configuration ITO/CeF3 (1 nm)/NPB (40 nm)/Alq3 (60 nm)/LiF (1 nm)/Al (150 nm). The enhancement mechanism was systematically investigated via several approaches. The work function increased from 4.8 eV (standard ITO electrode) to 5.2 eV (1-nm-thick UV-ozone treated CeF3 film deposited on the ITO electrode). The turn-on voltage decreased from 4.2 V to 4.0 V at 1 mA/cm2, the luminance increased from 7588 cd/m2 to 10820 cd/m2, and the current efficiency increased from 3.2 cd/A to 3.5 cd/A when the 1-nm-thick UV-ozone treated CeF3 film was inserted into the OLEDs.

  2. Electron density and plasma waves in mid-latitude sporadic-E layer observed during the SEEK-2 campaign

    Directory of Open Access Journals (Sweden)

    M. Wakabayashi

    2005-10-01

    Full Text Available The SEEK-2 campaign was carried out over Kyushu Island in Japan on 3 August 2002, by using the two sounding rockets of S310-31 and S310-32. This campaign was planned to elucidate generation mechanisms of Quasi-Periodic Echoes (QPEs associated with mid-latitude sporadic-E (Es layers. Electron number densities were successfully measured in the Es layers by using the impedance probe on board two rockets. The plasma waves in the VLF and ELF ranges were also observed on board the S310-32 rocket. Results of electron density measurement showed that there were one or two major peaks in the Es layers along the rockets' trajectories near the altitude of about 10km. There were some smaller peaks associated with the main Es layers in the altitude range from 90 to 120 km. These density peaks were distributed in a very large extent during the SEEK-2 campaign. The Es layer structure is also measured by using the Fixed Bias Probe (FBP, which has a high spatial resolution of several meters (the impedance probe has an altitude resolution of about 400 m. The comparison with the total electron content (TEC measured by the Dual Band Beacon revealed that the Es layer was also modulated in the horizontal direction with the scale size of 30–40 km. It was shown that the QP echoes observed by the ground-based coherent radar come from the major density peak of the Es layer. The plasma wave instrument detected the enhancement of VLF and ELF plasma waves associated with the operation of the TMA release, and also with the passage of the Es layers. Keywords. Ionosphere (Ionospheric irregularities; Midlatitude ionosphere; Plasma temeperature and density

  3. Spatial Atmospheric Pressure Atomic Layer Deposition of Tin Oxide as an Impermeable Electron Extraction Layer for Perovskite Solar Cells with Enhanced Thermal Stability.

    Science.gov (United States)

    Hoffmann, Lukas; Brinkmann, Kai O; Malerczyk, Jessica; Rogalla, Detlef; Becker, Tim; Theirich, Detlef; Shutsko, Ivan; Görrn, Patrick; Riedl, Thomas

    2018-02-14

    Despite the notable success of hybrid halide perovskite-based solar cells, their long-term stability is still a key-issue. Aside from optimizing the photoactive perovskite, the cell design states a powerful lever to improve stability under various stress conditions. Dedicated electrically conductive diffusion barriers inside the cell stack, that counteract the ingress of moisture and prevent the migration of corrosive halogen species, can substantially improve ambient and thermal stability. Although atomic layer deposition (ALD) is excellently suited to prepare such functional layers, ALD suffers from the requirement of vacuum and only allows for a very limited throughput. Here, we demonstrate for the first time spatial ALD-grown SnO x at atmospheric pressure as impermeable electron extraction layers for perovskite solar cells. We achieve optical transmittance and electrical conductivity similar to those in SnO x grown by conventional vacuum-based ALD. A low deposition temperature of 80 °C and a high substrate speed of 2.4 m min -1 yield SnO x layers with a low water vapor transmission rate of ∼10 -4 gm -2 day -1 (at 60 °C/60% RH). Thereby, in perovskite solar cells, dense hybrid Al:ZnO/SnO x electron extraction layers are created that are the key for stable cell characteristics beyond 1000 h in ambient air and over 3000 h at 60 °C. Most notably, our work of introducing spatial ALD at atmospheric pressure paves the way to the future roll-to-roll manufacturing of stable perovskite solar cells.

  4. Electronic properties of {mu}c-Si:H layers investigated with Hall measurements

    Energy Technology Data Exchange (ETDEWEB)

    Bronger, T

    2007-02-28

    In the present work, the electronic properties of thin layers of PECVD-grown {mu}c-Si:H have been examined using the Hall effect. The main focus was on the mobility of the carriers because this is a crucial limiting factor for the electronic quality of this material, however, the density of free carriers as well as the conductivity were also determined. In order to get a picture as comprehensive as possible, a sample matrix was studied consisting of samples with different n-type doping levels and different crystallinities. Additionally, doped samples with artificially implanted defects which could be annealed gradually were investigated. All measurements have been made temperature-dependently. During the work, a new computer control and analysis program was developed from scratch for the Hall setup. It allows for high automation as well as comprehensive error estimation, both of which being very important for high ohmic samples. All samples showed a thermally activated mobility and carrier concentration, however, there is no single activation energy. Instead, all Arrhenius plots exhibited a more or less pronounced convex curvature. This curvature was identified with the parallel connection of a broad distribution of barriers in the material, which are limiting to the transport and are overcome by thermoionic emission. From this, the model of normally distributed barriers (NDB) was derived, mathematically investigated, and successfully applied to the experimental data of this work and (for not too highly doped samples) of other works. As a significant validation of the NDB model, the relative room-temperature mobility values could be calculated just from the Arrhenius slopes and curvatures. A very important dependence turned out to be mobility versus carrier concentration. In particular the annealed sample showed a clear {mu} {proportional_to} n{sup 1/2} behaviour, which could be backed with the sample matrix. Additionally, Hall measurements on HWCVD-grown {mu

  5. Influence of the number of layers on ultrathin CsSnI3 perovskite: from electronic structure to carrier mobility

    Science.gov (United States)

    Liu, Biao; Long, Mengqiu; Cai, Meng-Qiu; Yang, Junliang

    2018-03-01

    Inorganic halide perovskites have attracted great attention in recent years as promising materials for optoelectronic devices, with ultrathin inorganic halide perovskites showing excellent properties and great potential applications. Herein, the intrinsic electronic and optical properties of ultrathin cesium tin tri-iodide (CsSnI3) perovskite with a varying number of layers are explored using first-principles calculations. The results reveal that ultrathin CsSnI3 is a direct band gap semiconductor, and the band gap continues to increase to 1.83 eV from 1.28 eV as the number of layers is reduced to one layer from the bulk. By decreasing the number of layers, the effective mass of ultrathin CsSnI3 increases, and the optical absorption intensity along the x and y directions shows that the linear dichroism becomes stronger and stronger. Furthermore, the carrier mobilities (µ) can be predicted, and they show obvious in-plane anisotropy. The µ of the electrons is higher than that of the holes, and the electron mobility along the y direction is higher than that along the x direction. The layer thickness does not distinctly influence the µ. The difference in the atomic orbital distribution has the nature of obvious anisotropy in ultrathin CsSnI3. This work suggests that ultrathin inorganic perovskite could be a potential candidate for future nano-optoelectronic devices.

  6. Local deposition of high-purity Pt nanostructures by combining electron beam induced deposition and atomic layer deposition

    NARCIS (Netherlands)

    Mackus, A.J.M.; Mulders, J.J.L.; Sanden, van de M.C.M.; Kessels, W.M.M.

    2010-01-01

    An approach for direct-write fabrication of high-purity platinum nanostructures has been developed by combining nanoscale lateral patterning by electron beam induced deposition (EBID) with area-selective deposition of high quality material by atomic layer deposition (ALD). Because virtually pure,

  7. N-type polymers as electron extraction layers in hybrid perovskite solar cells with improved ambient stability

    NARCIS (Netherlands)

    Shao, S.; Chen, Z.; Fang, H. -H.; ten Brink, G. H.; Bartesaghi, D.; Adjokatse, S.; Koster, L. J. A.; Kooi, B. J.; Facchetti, A.; Loi, M. A.

    2016-01-01

    We studied three n-type polymers of the naphthalenediimide-bithiophene family as electron extraction layers (EELs) in hybrid perovskite solar cells. The recombination mechanism in these devices is found to be heavily influenced by the EEL transport properties. The maximum efficiency of the devices

  8. Atomic-layer deposited Nb2O5 as transparent passivating electron contact for c-Si solar cells

    NARCIS (Netherlands)

    Macco, Bart; Black, Lachlan E.; Melskens, Jimmy; van de Loo, Bas W.H.; Berghuis, Willem Jan H.; Verheijen, Marcel A.; Kessels, Wilhelmus M.M.

    2018-01-01

    Passivating contacts based on metal oxides have proven to enable high energy conversion efficiencies for crystalline silicon (c-Si) solar cells at low processing complexity. In this work, the potential of atomic-layer deposited (ALD) Nb2O5 as novel electron-selective passivating contact is explored

  9. O3 Layers via Spray Pyrolysis at Low Temperatures and Their Application in High Electron Mobility Transistors

    KAUST Repository

    Isakov, Ivan

    2017-04-06

    The growth mechanism of indium oxide (InO) layers processed via spray pyrolysis of an aqueous precursor solution in the temperature range of 100-300 °C and the impact on their electron transporting properties are studied. Analysis of the droplet impingement sites on the substrate\\'s surface as a function of its temperature reveals that Leidenfrost effect dominated boiling plays a crucial role in the growth of smooth, continuous, and highly crystalline InO layers via a vapor phase-like process. By careful optimization of the precursor formulation, deposition conditions, and choice of substrate, this effect is exploited and ultrathin and exceptionally smooth layers of InO are grown over large area substrates at temperatures as low as 252 °C. Thin-film transistors (TFTs) fabricated using these optimized InO layers exhibit superior electron transport characteristics with the electron mobility reaching up to 40 cm V s, a value amongst the highest reported to date for solution-processed InO TFTs. The present work contributes enormously to the basic understanding of spray pyrolysis and highlights its tremendous potential for large-volume manufacturing of high-performance metal oxide thin-film transistor electronics.

  10. O3 Layers via Spray Pyrolysis at Low Temperatures and Their Application in High Electron Mobility Transistors

    KAUST Repository

    Isakov, Ivan; Faber, Hendrik; Grell, Max; Wyatt-Moon, Gwenhivir; Pliatsikas, Nikos; Kehagias, Thomas; Dimitrakopulos, George P.; Patsalas, Panos P.; Li, Ruipeng; Anthopoulos, Thomas D.

    2017-01-01

    The growth mechanism of indium oxide (InO) layers processed via spray pyrolysis of an aqueous precursor solution in the temperature range of 100-300 °C and the impact on their electron transporting properties are studied. Analysis of the droplet impingement sites on the substrate's surface as a function of its temperature reveals that Leidenfrost effect dominated boiling plays a crucial role in the growth of smooth, continuous, and highly crystalline InO layers via a vapor phase-like process. By careful optimization of the precursor formulation, deposition conditions, and choice of substrate, this effect is exploited and ultrathin and exceptionally smooth layers of InO are grown over large area substrates at temperatures as low as 252 °C. Thin-film transistors (TFTs) fabricated using these optimized InO layers exhibit superior electron transport characteristics with the electron mobility reaching up to 40 cm V s, a value amongst the highest reported to date for solution-processed InO TFTs. The present work contributes enormously to the basic understanding of spray pyrolysis and highlights its tremendous potential for large-volume manufacturing of high-performance metal oxide thin-film transistor electronics.

  11. Influence of multiple scattering of a relativistic electron in a periodic layered medium on coherent X-ray radiation

    Energy Technology Data Exchange (ETDEWEB)

    Blazhevich, S. V.; Kos’kova, T. V.; Noskov, A. V., E-mail: noskovbupk@mail.ru [Belgorod State National Research University (Russian Federation)

    2016-01-15

    A dynamic theory of coherent X-ray radiation generated in a periodic layered medium by a relativistic electron multiply scattered by target atoms has been developed. The expressions describing the spectral–angular characteristics of parametric X-ray radiation and diffracted transition radiation are derived. Numerical calculations based on the derived expressions have been performed.

  12. Amorphous Tin Oxide as a Low-Temperature-Processed Electron-Transport Layer for Organic and Hybrid Perovskite Solar Cells

    KAUST Repository

    Barbe, Jeremy; Tietze, Max Lutz; Neophytou, Marios; Banavoth, Murali; Alarousu, Erkki; El Labban, Abdulrahman; Abulikemu, Mutalifu; Yue, Wan; Mohammed, Omar F.; McCulloch, Iain; Amassian, Aram; Del Gobbo, Silvano

    2017-01-01

    Chemical bath deposition (CBD) of tin oxide (SnO) thin films as an electron-transport layer (ETL) in a planar-heterojunction n-i-p organohalide lead perovskite and organic bulk-heterojunction (BHJ) solar cells is reported. The amorphous SnO (a

  13. Secondary electron emission influenced by oxidation on the aluminum surface: the roles of the chemisorbed oxygen and the oxide layer

    Science.gov (United States)

    Li, Jiangtao; Hoekstra, Bart; Wang, Zhen-Bin; Qiu, Jie; Pu, Yi-Kang

    2018-04-01

    A relationship between the apparent secondary electron yield ({γ }{{se}}) and the oxygen coverage/oxide layer thickness on an aluminum cathode is obtained in an experiment under a controlled environment. The apparent secondary electron yield ({γ }{{se}}) is deduced from the breakdown voltage between two parallel plate electrodes in a 360 mTorr argon environment using a simple Townsend breakdown model with the assumption that the variation of the apparent secondary electron yield is dominated by the variation of the argon ion induced processes. The oxygen coverage/oxide layer thickness on the aluminum cathode is measured by a semi in situ x-ray photoemission spectroscopy equipment which is directly attached to the discharge chamber. It is found that three phases exist: (1) in the monomonolayer regime, as the oxygen coverage increases from 0 to 0.3, {γ }{{se}} decreases by nearly 40 % , (2) as the oxygen coverage increases from 0.3 to 1, {γ }{{se}} keeps nearly constant, (3) as the oxide layer thickness increases from about 0.3 nm to about 1.1 nm, {γ }{{se}} increases by 150 % . We propose that, in the submonolayer regime, the chemisorbed oxygen on the aluminum surface causes the decrease of {γ }{{se}} by creating a local potential barrier, which reduces the Auger neutralization rate and the energy gained by the Auger electrons. In the multilayer regime, as the oxide layer grows in thickness, there are three proposed mechanisms which cause the increase of {γ }{{se}}: (1) the work function decreases; (2) resonance neutralization and Auger de-excitation may exist. This is served as another channel for secondary electron production; (3) the kinetic energy of Auger electrons is increased on average, leading to a higher probability for electrons to overcome the surface potential barrier.

  14. Photodiode Based on CdO Thin Films as Electron Transport Layer

    Science.gov (United States)

    Soylu, M.; Kader, H. S.

    2016-11-01

    Cadmium oxide (CdO) thin films were synthesized by the sol-gel method. The films were analyzed by means of XRD, AFM, and UV/Vis spectrophotometry. X-ray diffraction patterns confirm that the films are formed from CdO with cubic crystal structure and consist of nano-particles. The energy gap of the prepared film was found to be 2.29 eV. The current-voltage ( I- V) characteristics of the CdO/ p-Si heterojunction were examined in the dark and under different illumination intensities. The heterojunction showed high rectifying behavior and a strong photoresponse. Main electrical parameters of the photodiode such as series and shunt resistances ( R s and R sh), saturation current I 0, and photocurrent I ph, were extracted considering a single diode equivalent circuit of a photovoltaic cell. Results indicate that the application of CdO thin films as an electron transport layer on p-Si acts as a photodetector in the field of the UV/visible.

  15. Electronic properties of the layer III-VI semiconductors. A comparative study

    International Nuclear Information System (INIS)

    Depeursinge, Y.

    1981-01-01

    The electronic properties of the family of layer compounds InSe, GaSe and GaS by the empirical pseudopotential method have been studied. Both atomic positions, which are not accurately known from experiment, and atomic pseudopotentials are adjusted to fit the main optical and photoemission data with the further constraint that the same Se potential should be valid for InSe and GaSe, and the same Ga potential for GaS and GaSe. The charge densities have also been calculated and show that the ionicity of InSe is greater than that of GaS and GaSe, in good agreement with the Phillips electronegativity scale which predicts that InSe is 1.2 and 1.3 times more ionic than GaS and GaSe, respectively. The calculated band structures and charge densities allow a detailed discussion of the integrated and angle-resolved photoemission data as well as of the optical properties of these compounds. (author)

  16. Spin-dependent electron-phonon coupling in the valence band of single-layer WS2

    DEFF Research Database (Denmark)

    Hinsche, Nicki Frank; Ngankeu, Arlette S.; Guilloy, Kevin

    2017-01-01

    The absence of inversion symmetry leads to a strong spin-orbit splitting of the upper valence band of semiconducting single-layer transition-metal dichalchogenides such as MoS2 or WS2. This permits a direct comparison of the electron-phonon coupling strength in states that only differ by their spin....... Here, the electron-phonon coupling in the valence band maximum of single-layer WS2 is studied by first-principles calculations and angle-resolved photoemission. The coupling strength is found to be drastically different for the two spin-split branches, with calculated values of λK=0.0021 and 0.......40 for the upper and lower spin-split valence band of the freestanding layer, respectively. This difference is somewhat reduced when including scattering processes involving the Au(111) substrate present in the experiment but it remains significant, in good agreement with the experimental results....

  17. Energy- and temperature dependences of secondary electron emission of CsI- and CsBr layers doped with Cd

    International Nuclear Information System (INIS)

    Galij, P.V.; Tsal', N.A.

    1983-01-01

    The energy and temperature dependences of the secondary electron emission coefficient (SEEC) of CsI-Cd-, CsBr-Cd-, CsI-CsBr layers have been studied. The effect of bivalent cadmium impurity on the SEEC value is investigated. It is shown that implantation of small amounts of Cd 2+ impurity into the lattice of the initial monocrystals might increase the SEEC values of the layers. Temperature dependences (TD) of SEEC are measured and the possibility of comparing experimental results with the Dekker formula is analyzed. A conclusion is drawn that the Dekker model well describes the TD of SEEC of doped layers at temperatures T < or approximately 100 deg C. At elevated temperatures., along with secondary electron scattering on phonons, one should take into account their scattering on vacancies

  18. Analysis of borophosphosilicate glass layers on silicon wafers by X-ray emission from photon and electron excitation

    International Nuclear Information System (INIS)

    Elgersma, O.; Borstrok, J.J.M.

    1989-01-01

    Phosphorus and oxygen concentrations in the homogeneous layer of borosilicate glass (BPSG) deposited on Si-integrated circuits are determined by X-ray fluorescence from photon excitation. The X-ray emission from electron excitation in an open X-ray tube instrument yields a sufficiently precise determination of the boron content. The thickness of the layer can be derived from silicon Kα-fluorescence. A calibration model is proposed for photon as well as for electron excitation. The experimentally determined parameters in this model well agree with those derived from fundamental parameters for X-ray absorption and emission. The chemical surrounding of silicon affects strongly the peak profile of the silicon Kβ-emission. This enables to distinguish emission from the silicon atoms in the wafer and from the silicon atoms in the silicon oxide complexes of the BPSG-layer. (author)

  19. Operation voltage behavior of organic light emitting diodes with polymeric buffer layers doped by weak electron acceptor

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Hyeon Soo; Cho, Sang Hee [Department of Information Display and Advanced Display Research Center, Kyung Hee University, Seoul 130-701 (Korea, Republic of); Seo, Jaewon; Park, Yongsup [Department of Physics, Kyung Hee University, Seoul 130-701 (Korea, Republic of); Suh, Min Chul, E-mail: mcsuh@khu.ac.kr [Department of Information Display and Advanced Display Research Center, Kyung Hee University, Seoul 130-701 (Korea, Republic of)

    2013-11-01

    We present polymeric buffer materials based on poly[2,7-(9,9-dioctyl-fluorene)-co-(1,4-phenylene -((4-sec-butylphenyl)imino)-1,4-phenylene)] (TFB) for highly efficient solution processed organic light emitting diodes (OLEDs). Doped TFB with 9,10-dicyanoanthracene, a weak electron acceptor results in significant improvement of current flow and driving voltage. Maximum current- and power-efficiency value of 12.6 cd/A and 18.1 lm/W are demonstrated from phosphorescent red OLEDs with this doped polymeric anode buffer system. - Highlights: • Polymeric buffer materials for organic light emitting diodes (OLEDs). • Method to control hole conductivity of polymeric buffer layer in OLED device. • Enhanced current density of buffer layers upon 9,10-dicyanoanthracene (DCA) doping. • Comparison of OLED devices having polymeric buffer layer with or without DCA. • Effect on operating voltage by doping DCA in the buffer layer.

  20. Optimization of an Electron Transport Layer to Enhance the Power Conversion Efficiency of Flexible Inverted Organic Solar Cells

    Directory of Open Access Journals (Sweden)

    Lee Kang Hyuck

    2010-01-01

    Full Text Available Abstract The photovoltaic (PV performance of flexible inverted organic solar cells (IOSCs with an active layer consisting of a blend of poly(3-hexylthiophene and [6, 6]-phenyl C61-butlyric acid methyl ester was investigated by varying the thicknesses of ZnO seed layers and introducing ZnO nanorods (NRs. A ZnO seed layer or ZnO NRs grown on the seed layer were used as an electron transport layer and pathway to optimize PV performance. ZnO seed layers were deposited using spin coating at 3,000 rpm for 30 s onto indium tin oxide (ITO-coated polyethersulphone (PES substrates. The ZnO NRs were grown using an aqueous solution method at a low temperature (90°C. The optimized device with ZnO NRs exhibited a threefold increase in PV performance compared with that of a device consisting of a ZnO seed layer without ZnO NRs. Flexible IOSCs fabricated using ZnO NRs with improved PV performance may pave the way for the development of PV devices with larger interface areas for effective exciton dissociation and continuous carrier transport paths.

  1. Simple solution-processed titanium oxide electron transport layer for efficient inverted polymer solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Liang [CAS Key Laboratory of Bio-based Materials, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Shen, Wenfei [CAS Key Laboratory of Bio-based Materials, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101 (China); Institute of Hybrid Materials, Laboratory of New Fiber Materials and Modern Textile—The Growing Base for State Key Laboratory, Qingdao University, Qingdao 266071 (China); Chen, Weichao [CAS Key Laboratory of Bio-based Materials, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101 (China); Bao, Xichang, E-mail: baoxc@qibebt.ac.cn [CAS Key Laboratory of Bio-based Materials, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101 (China); Wang, Ning; Dou, Xiaowei; Han, Liangliang; Wen, Shuguang [CAS Key Laboratory of Bio-based Materials, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101 (China)

    2014-12-31

    Titanium oxide (TiO{sub X}) is an effective electron transport layer (ETL) in polymer solar cells (PSCs). We report efficient inverted PSCs with a simple solution-processed amorphous TiO{sub X} (s-TiO{sub X}) film as an ETL. The s-TiO{sub X} film with high light transmittance was prepared by spin-coating titanium (IV) isopropoxide isopropanol solution on indium tin oxide coated glass in inert and then placed in air under room temperature for 60 min. The introduction of s-TiO{sub X} ETL greatly improved the short circuit current density of the devices. PSCs based on poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester and poly(4,8-bis-alkyloxy-benzo[1,2-b:4,5-b′]dithiophene-alt-alkylcarbonyl -thieno[3,4-b]thiophene):[6,6]-phenyl- C71-butyric acid methyl ester using s-TiO{sub X} film as ETL shows high power conversion efficiency of 4.29% and 6.7% under the illumination of AM 1.5G, 100 mW/cm{sup 2}, which shows enhancements compared to the conventional PSCs with poly(styrenesulfonate)-doped poly(ethylenedioxythiophene) as anode buffer layer. In addition, the device exhibits good stability in a humid ambient atmosphere without capsulation. The results indicate that the annealing-free, simple solution processed s-TiO{sub X} film is an efficient ETL for high-performance PSCs. - Highlights: • High quality s-TiO{sub X} films were prepared by a simple, solution method without thermal treatment. • The s-TiO{sub X} films with high transmittance are very smooth. • The organic photovoltaic performance with s-TiO{sub X} film improved greatly and exhibited good stability. • The annealing-free, simple prepared s-TiO{sub X} film will be much compatible with flexible substrates.

  2. Thailand low and equatorial F 2-layer peak electron density and comparison with IRI-2007 model

    Science.gov (United States)

    Wichaipanich, N.; Supnithi, P.; Tsugawa, T.; Maruyama, T.

    2012-06-01

    Ionosonde measurements obtained at two Thailand ionospheric stations, namely Chumphon (10.72°N, 99.37°E, dip 3.0°N) and Chiang Mai (18.76°N, 98.93°E, dip 12.7°N) are used to examine the variation of the F 2-layer peak electron density ( N m F 2) which is derived from the F 2-layer critical frequency, f o f 2. Measured data from September 2004 to August 2005 (a period of low solar activity) are analyzed based on the diurnal and seasonal variation and then compared with IRI-2007 model predictions. Our results show that, in general, the diurnal and seasonal variations of the N m F 2 predicted by the IRI (URSI and CCIR options) model show a feature generally similar to the observed N m F 2. Underestimation mostly occurs in all seasons except during the September equinox and the December solstice at Chumphon, and the September equinox and the March equinox at Chiang Mai, when they overestimate those measured. The best agreement between observation and prediction occurs during the pre-sunrise to post-sunrise hours. The best agreement of the %PD values of both the options occurs during the March equinox, while the agreement is the worst during the September equinox. The N m F 2 values predicted by the CCIR option show a smaller range of deviation than the N m F 2 values predicted by the URSI option. During post-sunset to morning hours (around 21:00-09:00 LT), the observed N m F 2 at both stations are almost identical for the periods of low solar activity. However, during daytime, the observed N m F 2 at Chumphon is lower than that at Chiang Mai. The difference between these two stations can be explained by the equatorial ionospheric anomaly (EIA). These results are important for future improvements of the IRI model for N m F 2 over Southeast Asia, especially for the areas covered by Chumphon and Chiang Mai stations.

  3. Sedimentology and composition of sands injected during the seismic crisis of May 2012 (Emilia, Italy): clues for source layer identification and liquefaction regime

    Science.gov (United States)

    Fontana, D.; Lugli, S.; Marchetti Dori, S.; Caputo, R.; Stefani, M.

    2015-07-01

    In May 2012 widespread sand blows formed along buried channels in the eastern sector of the Po Plain (Northern Italy) as a consequence of a series of seismic events with main shocks of Mw 6.1 and 5.9. At San Carlo (Ferrara) a trench dug a few week after the earthquakes exposed sand dikes cutting through an old Reno River channel-levee system that was diverted in the 18th century and was deposited starting from the 14th century (unit A). This sequence overlies a Holocene muddy floodplain deposits and contains scattered sandy channel deposits (unit B) and a Pleistocene channel sand unit (unit C). Sands with inverse and normal grading, concave layering and vertical lamination coexisting along the dikes suggest multiple rhythmic opening and closing of the fractures that were injected and filled by a slurry of sand during the compression pulses, and emptied during the extension phase. The pulse mechanism may have lasted for several minutes and formed well stratified sand volcanoes structures that formed at the top of the fractures. Sands from dikes and from the various units show well defined compositional fields from lithoarenitic to quartz-feldspar-rich compositions. Sands from the old Reno levee and channel fill (unit A) have abundant lithic fragments derived from the erosion of Apennine sedimentary carbonate and terrigenous successions. Composition of the sand filling the dikes show clear affinities with sand layers of the old Reno River channel (Unit A) and clearly differ from any sand from deeper Holocene and Pleistocene layers (Unit B and C), which are richer in quartz and feldspar and poorer in sedimentary lithic fragments. Sorting related to sediment flux variations did not apparently affect the sand composition across the sedimentary structures. Textural and compositional data indicate that the liquefaction processes originated from a relatively shallow source consisting of channel sands located within Unit A at 6.8.to 7.5 m depth.

  4. Variation of the refractive index for the active layer of the double heterostructure GaAlAsSb/GaInAsSb/GaAlAsSb in injected mode

    International Nuclear Information System (INIS)

    Mohou, M.A.

    1995-01-01

    This work reports on the influence of the injected current on the refractive index in the active layer of GaInAsSb/GaAlAsSb laser diodes. These diodes present at threshold a full beam width at half power θ perpendicular of about 52 deg. C. The fluctuation of the refractive index caused by the injection of free carriers was studied on the basis of the evolution of θ perpendicular as a function of the injected current. It was shown that the inversion of the population which follows the rising of the gain, causes a slight decrease of the refractive index. 12 refs, 5 figs

  5. Characterization of light element impurities in ultrathin silicon-on-insulator layers by luminescence activation using electron irradiation

    International Nuclear Information System (INIS)

    Nakagawa-Toyota, Satoko; Tajima, Michio; Hirose, Kazuyuki; Ohshima, Takeshi; Itoh, Hisayoshi

    2009-01-01

    We analyzed light element impurities in ultrathin top Si layers of silicon-on-insulator (SOI) wafers by luminescence activation using electron irradiation. Photoluminescence (PL) analysis under ultraviolet (UV) light excitation was performed on various commercial SOI wafers after the irradiation. We detected the C-line related to a complex of interstitial carbon and oxygen impurities and the G-line related to a complex of interstitial and substitutional carbon impurities in the top Si layer with a thickness down to 62 nm after electron irradiation. We showed that there were differences in the impurity concentration depending on the wafer fabrication methods and also that there were variations in these concentrations in the respective wafers. Xenon ion implantation was used to activate top Si layers selectively so that we could confirm that the PL signal under the UV light excitation comes not from substrates but from top Si layers. The present method is a very promising tool to evaluate the light element impurities in top Si layers. (author)

  6. Electronic structure and lattice dynamics at the interface of single layer FeSe and SrTiO3

    Science.gov (United States)

    Ahmed, Towfiq; Balatsky, Alexander; Zhu, Jian-Xin

    Recent discovery of high-temperature superconductivity with the superconducting energy gap opening at temperatures close to or above the liquid nitrogen boiling point in the single-layer FeSe grown on SrTiO3 has attracted significant interest. It suggests that the interface effects can be utilized to enhance the superconductivity. It has been shown recently that the coupling between the electrons in FeSe and vibrational modes at the interface play an important role. Here we report on a detailed study of electronic structure and lattice dynamics in the single-layer FeSe/SrTiO3 interface by using the state-of-art electronic structure method within the density functional theory. The nature of the vibrational modes at the interface and their coupling to the electronic degrees of freedom are analyzed. In addition, the effect of hole and electron doping in SrTiO3 on the electron-mode coupling strength is also considered. This work was carried out under the auspices of the National Nuclear Security Administration of the U.S. DOE at LANL under Contract No. DE-AC52-06NA25396, and was supported by the DOE Office of Basic Energy Sciences.

  7. Electron transfer through solid-electrolyte-interphase layers formed on Si anodes of Li-ion batteries

    International Nuclear Information System (INIS)

    Benitez, L.; Cristancho, D.; Seminario, J.M.; Martinez de la Hoz, J.M.; Balbuena, P.B.

    2014-01-01

    Solid-electrolyte interphase (SEI) films are formed on the electrode surfaces due to aggregation of products of reduction or oxidation of the electrolyte. These films may grow to thicknesses in the order of 50-100 nm and contain a variety of organic and inorganic products but their structure is not well defined. Although in some cases the films exert a passivating role, this is not always the case, and these phenomena are particularly more complex on Silicon anodes due to swelling and cracking of the electrode during lithiation and delithiation. Since the driving force for SEI growth is electron transfer, it is important to understand how electron transfer may keep occurring through the heterogeneous film once the bare electron surface is covered. Here we introduce a novel approach for studying electron transfer through model films and show preliminary results for the analysis of electron transfer through model composite interfacial systems integrated by electrode/SEI layer/electrolyte. Ab initio molecular dynamics simulations are used to identify deposition of SEI components, and a density functional theory/Green's function approach is utilized for characterizing electron transfer. Three degrees of lithiation are modeled for the electrodes, the SEI film is composed by LiF or Li 2 O, and the ethylene carbonate reduction is studied. An applied potential is used as driving force for the leakage current, which is evaluated as a function of the applied potential. Comparative analyses are done for LiF and Li 2 O model SEI layers

  8. Gallium arsenide injection lasers

    International Nuclear Information System (INIS)

    Thompson, G.H.B.

    1975-01-01

    The semiconductor injection laser includes a thin inner GaAs p-n junction layer between two outer GaAlAs layers which are backed by further thin outer GaAlAs layers with a heavier doping of AlAs. This reduces optical losses. Optical energy is further confined within the inner layers and the lasing threshold reduced by added outer GaAs layers of low electrical and thermal resistivity

  9. Beam-plasma interaction with an electron beam injecting into a symmetrically open plasma system; Electron beam relaxation. Puchkovo-plazmennoe vzaimodejstvie pri inzhektsii ehlektronnogo puchka v simmetrichno otkrytuyu plazmennuyu sistemu; Relaksatsiya ehlektronnogo puchka

    Energy Technology Data Exchange (ETDEWEB)

    Opanasenko, A V; Romanyuk, L I [AN Ukrainskoj SSR, Kiev (Ukrainian SSR). Inst. Yadernykh Issledovanij

    1989-10-01

    The relaxation of the electron beam with the electron density of 1-2 keV injected through the symmetrically open plasma system with the independent hot cathode Penning discharge is experimentally investigated. It is shown that the velocity distribution function of the electron beam changes after passing each wave generation zone induced by the beam. The contribution of different wave zones to the beam relaxation depends on the prehistory of the beam-plasma interaction and may be regulated by the selection of the plasma system parameters. By this way the complete relaxation of the electron beam can be achieved after the beam crossing the whole system.

  10. The effect of van der Waal's gap expansions on the surface electronic structure of layered topological insulators

    International Nuclear Information System (INIS)

    Eremeev, S V; Vergniory, M G; Chulkov, E V; Menshchikova, T V; Shaposhnikov, A A

    2012-01-01

    On the basis of relativistic ab initio calculations, we show that an expansion of van der Waal's (vdW) spacings in layered topological insulators caused by intercalation of deposited atoms, leads to the simultaneous emergence of parabolic and M-shaped two-dimensional electron gas (2DEG) bands as well as Rashba-splitting of the former states. The expansion of vdW spacings and the emergence of the 2DEG states localized in the (sub)surface region are also accompanied by a relocation of the topological surface state to the lower quintuple layers, that can explain the absence of inter-band scattering found experimentally. (paper)

  11. Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

    Energy Technology Data Exchange (ETDEWEB)

    Li, X.; Nilsson, D.; Danielsson, Ö.; Pedersen, H.; Janzén, E.; Forsberg, U. [Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping 58183 (Sweden); Bergsten, J.; Rorsman, N. [Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg 41296 (Sweden)

    2015-12-28

    The creation of a semi insulating (SI) buffer layer in AlGaN/GaN High Electron Mobility Transistor (HEMT) devices is crucial for preventing a current path beneath the two-dimensional electron gas (2DEG). In this investigation, we evaluate the use of a gaseous carbon gas precursor, propane, for creating a SI GaN buffer layer in a HEMT structure. The carbon doped profile, using propane gas, is a two stepped profile with a high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) epitaxial layer closest to the substrate and a lower doped layer (3 × 10{sup 16 }cm{sup −3}) closest to the 2DEG channel. Secondary Ion Mass Spectrometry measurement shows a uniform incorporation versus depth, and no memory effect from carbon doping can be seen. The high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) does not influence the surface morphology, and a roughness root-mean-square value of 0.43 nm is obtained from Atomic Force Microscopy. High resolution X-ray diffraction measurements show very sharp peaks and no structural degradation can be seen related to the heavy carbon doped layer. HEMTs are fabricated and show an extremely low drain induced barrier lowering value of 0.1 mV/V, demonstrating an excellent buffer isolation. The carbon doped GaN buffer layer using propane gas is compared to samples using carbon from the trimethylgallium molecule, showing equally low leakage currents, demonstrating the capability of growing highly resistive buffer layers using a gaseous carbon source.

  12. Improving the performance of AlGaN-based deep-ultraviolet light-emitting diodes using electron blocking layer with a heart-shaped graded Al composition

    Science.gov (United States)

    Kwon, M. R.; Park, T. H.; Lee, T. H.; Lee, B. R.; Kim, T. G.

    2018-04-01

    We propose a design for highly efficient AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) using a heart-shaped graded Al composition electron-blocking layer (EBL). This novel structure reduced downward band bending at the interface between the last quantum barrier and the EBL and flattened the electrostatic field in the interlayer between the barriers of the multi-quantum barrier EBL. Consequently, electron leakage was significantly suppressed and hole injection efficiency was found to have improved. The parameter values of simulation were extracted from the experimental data of the reference DUV LEDs. Using the SimuLED, we compared the electrical and optical properties of three structures with different Al compositions in the active region and the EBL. The internal quantum efficiency of the proposed structure was shown to exceed those of the reference DUV LEDs by a factor of 1.9. Additionally, the output power at 20 mA was found to increase by a factor of 2.1.

  13. Many-electron effect in the Si K-LL resonant Auger-electron spectroscopy spectra of the Si delta layer in GaAs

    International Nuclear Information System (INIS)

    Ohno, Masahide

    2006-01-01

    The Si K-LL resonant Auger-electron spectroscopy (RAES) spectra of silicon delta dopped layers in GaAs with very thin capping layers show both normal Auger decay and resonant Auger decay, when the core-level electron is excited to the conduction band. The resonant Auger peak kinetic energy (KE) shows no dispersion with photon energy, except when excited by the highest energy photons [M.D. Jackson, J.M.C. Thornton, D. Lewis, A. Robinson, M. Fahy, A. Aviary, P. Weightman, Phys. Rev. B71 (2005) 075313]. The RAES spectra are analyzed using a many-body theory. The presence of resonant Auger decay and no dispersion of resonant Auger peak KE with photon energy is explained in terms of the relaxation of a metastable excited core-hole state to a stable one on the time scale of core-hole decay. The excited electron in the conduction band either delocalizes rapidly leaving the ionized Si to decay by a normal Auger decay or drops to a state localized in the Si delta layer before the core-hole decays so that the RAES spectrum has both normal Auger decay and resonant Auger decay. As a result of the relaxation, the resonant Auger peak KE does not show any dispersion with photon energy. The variations with photon energy of the normal or resonant Auger peak intensity, KE, and width are explained in a consistent manner by a many-body theory

  14. Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency

    Science.gov (United States)

    Zhang, Zi-Hui; Huang Chen, Sung-Wen; Chu, Chunshuang; Tian, Kangkai; Fang, Mengqian; Zhang, Yonghui; Bi, Wengang; Kuo, Hao-Chung

    2018-04-01

    This work reports a nearly efficiency-droop-free AlGaN-based deep ultraviolet light-emitting diode (DUV LED) emitting in the peak wavelength of 270 nm. The DUV LED utilizes a specifically designed superlattice p-type electron blocking layer (p-EBL). The superlattice p-EBL enables a high hole concentration in the p-EBL which correspondingly increases the hole injection efficiency into the multiple quantum wells (MQWs). The enhanced hole concentration within the MQW region can more efficiently recombine with electrons in the way of favoring the radiative recombination, leading to a reduced electron leakage current level. As a result, the external quantum efficiency for the proposed DUV LED structure is increased by 100% and the nearly efficiency-droop-free DUV LED structure is obtained experimentally.