WorldWideScience

Sample records for electron injection layer

  1. Tetrakis(1-imidazolyl) borate (BIM4) based zwitterionic and related molecules used as electron injection layers

    Science.gov (United States)

    Li, Huaping; Xu, Yunhua; Bazan, Guillermo C

    2013-02-05

    Tetrakis(1-imidazolyl)borate (BIm4) based zwitterionic and/or related molecules for the fabrication of PLEDs is provided. Device performances with these materials approaches that of devices with Ba/Al cathodes for which the cathode contact is ohmic. Methods of producing such materials, and electron injection layers and devices containing these materials are also provided.

  2. Improved electron injection in all-solution-processed n-type organic field-effect transistors with an inkjet-printed ZnO electron injection layer

    Science.gov (United States)

    Roh, Jeongkyun; Kim, Hyeok; Park, Myeongjin; Kwak, Jeonghun; Lee, Changhee

    2017-10-01

    Interface engineering for the improved injection properties of all-solution-processed n-type organic field-effect transistors (OFETs) arising from the use of an inkjet-printed ZnO electron injection layer were demonstrated. The characteristics of ZnO in terms of electron injection and transport were investigated, and then we employed ZnO as the electron injection layer via inkjet-printing during the fabrication of all-solution-processed, n-type OFETs. With the inkjet-printed ZnO electron injection layer, the devices exhibited approximately five-fold increased mobility (0.0058 cm2/V s to 0.030 cm2/V s), more than two-fold increased charge concentration (2.76 × 1011 cm-2 to 6.86 × 1011 cm-2), and two orders of magnitude reduced device resistance (120 MΩ cm to 3 MΩ cm). Moreover, n-type polymer form smoother film with ZnO implying denser packing of polymer, which results in higher mobility.

  3. Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes

    International Nuclear Information System (INIS)

    Lu, Yu-Hsuan; Pilkuhn, Manfred H.; Fu, Yi-Keng; Chu, Mu-Tao; Huang, Shyh-Jer; Su, Yan-Kuin; Wang, Kang L.

    2014-01-01

    The influence of the AlGaN electron blocking layer (EBL) with graded aluminum composition on electron confinement and hole injection in AlGaN-based ultraviolet light-emitting diodes (LEDs) are investigated. The light output power of LED with graded AlGaN EBL was markedly improved, comparing to LED with conventional EBL. In experimental results, a high increment of 86.7% can be obtained in light output power. Simulation analysis shows that via proper modification of the barrier profile from the last barrier of the active region to EBL, not only the elimination of electron overflow to p-type layer can be achieved but also the hole injection into the active region can be enhanced, compared to a conventional LED structure. The dominant factor to the performance improvement is shown to be the modulation of polarization field by the graded Al composition in EBL

  4. Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Yu-Hsuan; Pilkuhn, Manfred H. [Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Fu, Yi-Keng; Chu, Mu-Tao [Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan (China); Huang, Shyh-Jer, E-mail: yksu@mail.ncku.edu.tw, E-mail: totaljer48@gmail.com [Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, California 90095 (United States); Su, Yan-Kuin, E-mail: yksu@mail.ncku.edu.tw, E-mail: totaljer48@gmail.com [Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Department of Electronic Engineering, Kun-Shan University, Tainan 71003, Taiwan (China); Wang, Kang L. [Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, California 90095 (United States)

    2014-03-21

    The influence of the AlGaN electron blocking layer (EBL) with graded aluminum composition on electron confinement and hole injection in AlGaN-based ultraviolet light-emitting diodes (LEDs) are investigated. The light output power of LED with graded AlGaN EBL was markedly improved, comparing to LED with conventional EBL. In experimental results, a high increment of 86.7% can be obtained in light output power. Simulation analysis shows that via proper modification of the barrier profile from the last barrier of the active region to EBL, not only the elimination of electron overflow to p-type layer can be achieved but also the hole injection into the active region can be enhanced, compared to a conventional LED structure. The dominant factor to the performance improvement is shown to be the modulation of polarization field by the graded Al composition in EBL.

  5. Enhancing Carrier Injection Using Graded Superlattice Electron Blocking Layer for UVB Light-Emitting Diodes

    KAUST Repository

    Janjua, Bilal

    2014-12-01

    We have studied enhanced carrier injection by having an electron blocking layer (EBL) based on a graded superlattice (SL) design. Here, we examine, using a selfconsistent 6 × 6 k.p method, the energy band alignment diagrams under equilibrium and forward bias conditions while also considering carrier distribution and recombination rates (Shockley-Read-Hall, Auger, and radiative recombination rates). The graded SL is based on AlxGa1-xN (larger bandgap) Al0:5Ga0:5N (smaller bandgap) SL, where x is changed from 0.8 to 0.56 in steps of 0.06. Graded SL was found to be effective in reducing electron leakage and enhancing hole injection into the active region. Due to our band engineering scheme for EBL, four orders-of-magnitude enhancement were observed in the direct recombination rate, as compared with the conventional bulk EBL consisting of Al0:8Ga0:2N. An increase in the spatial overlap of carrier wavefunction was obtained due to polarization-induced band bending in the active region. An efficient single quantum-well ultraviolet-B light-emitting diode was designed, which emits at 280 nm. This is the effective wavelength for water disinfection application, among others.

  6. Primary events following electron injection into water and adsorbed water layers

    International Nuclear Information System (INIS)

    Barnett, R.N.; Landman, U.; Nitzan, A.

    1990-01-01

    The initial stages of the evolution of an electron injected into bulk water (at 300 K) and into thin water films (1--4 monolayers) adsorbed on a Pt(111) substrate at 50 K are investigated. It is shown that for electrons injected into bulk water with an initial translational kinetic energy between 1.54 and 6.18 eV (i.e., subexcitation energies), the electron momentum time-correlation function left-angle p(0)p(t)right-angle, decays to zero on a time scale of less than 1 fs, reflecting strong backscattering of the electron by the water molecules. On this time scale the electron propagation in the medium is dominated by elastic processes. Furthermore, during this initial stage the system is well represented by a static aqueous medium. Transmission of electrons injected into thin films of adsorbed water is also dominated by elastic scattering. The dependence of the electron transmission probability on the film thickness and the initial injection energy are in accord with recent experimental results of photoinjected electrons into adsorbed water films

  7. Efficient inverted bottom-emission blue phosphorescent organic light-emitting diodes with a ytterbium-doped electron injection layer

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Hyunkoo; Ahn, Hyuk; Lee, Changhee [Seoul National University, Seoul (Korea, Republic of); Kwak, Jeonghun [Dong-A University, Busan (Korea, Republic of)

    2012-11-01

    An efficient electron injection layer (EIL) for inverted bottom-emission organic light-emitting diodes (IBE-OLEDs) is developed by doping ytterbium (Yb) into an organic electron transport material of 1,3,5-tri(m-pyrid-3-yl-phenyl)benzene (TmPyPB). The Yb-doped EIL in the IBE-OLEDs having iridium(III) bis(4,6-(difluorophenyl)pyridinato-N,C{sup 2{sup j}}) picolinate (FIrpic) as a blue phosphorescent dopant shows a lower turn-on voltage (~4.5 V) and about a 6.6 times higher efficiency (~8.6% and 15.3 cd/A at 0.15 mA/cm²) compared with the device without the Yb-doped EIL. Furthermore, the electroluminescence spectrum of the device with the Yb-doped EIL is about the same as that of the device without the Yb-doped EIL. This result indicates that the Yb-doped EIL improves the electron injection from the ITO cathode to the organic electron transport layer. Therefore, the Yb-doped EIL can be utilized as an effective electron injection layer in the OLEDs.

  8. A layer-by-layer ZnO nanoparticle-PbS quantum dot self-assembly platform for ultrafast interfacial electron injection

    KAUST Repository

    Eita, Mohamed Samir

    2014-08-28

    Absorbent layers of semiconductor quantum dots (QDs) are now used as material platforms for low-cost, high-performance solar cells. The semiconductor metal oxide nanoparticles as an acceptor layer have become an integral part of the next generation solar cell. To achieve sufficient electron transfer and subsequently high conversion efficiency in these solar cells, however, energy-level alignment and interfacial contact between the donor and the acceptor units are needed. Here, the layer-by-layer (LbL) technique is used to assemble ZnO nanoparticles (NPs), providing adequate PbS QD uptake to achieve greater interfacial contact compared with traditional sputtering methods. Electron injection at the PbS QD and ZnO NP interface is investigated using broadband transient absorption spectroscopy with 120 femtosecond temporal resolution. The results indicate that electron injection from photoexcited PbS QDs to ZnO NPs occurs on a time scale of a few hundred femtoseconds. This observation is supported by the interfacial electronic-energy alignment between the donor and acceptor moieties. Finally, due to the combination of large interfacial contact and ultrafast electron injection, this proposed platform of assembled thin films holds promise for a variety of solar cell architectures and other settings that principally rely on interfacial contact, such as photocatalysis. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Enhanced brightness of organic light-emitting diodes based on Mg:Ag cathode using alkali metal chlorides as an electron injection layer

    International Nuclear Information System (INIS)

    Zou Ye; Deng Zhenbo; Xu Denghui; Lü Zhaoyue; Yin Yuehong; Du Hailiang; Chen Zheng; Wang Yongsheng

    2012-01-01

    Different thicknesses of cesium chloride (CsCl) and various alkali metal chlorides were inserted into organic light-emitting diodes (OLEDs) as electron injection layers (EILs). The basic structure of OLED is indium tin oxide (ITO)/N,N′-diphenyl-N,N′-bis(1-napthyl-phenyl)-1.1′-biphenyl-4.4′-diamine (NPB)/tris-(8-hydroxyquinoline) aluminum (Alq 3 )/Mg:Ag/Ag. The electroluminescent (EL) performance curves show that both the brightness and efficiency of the OLEDs can be obviously enhanced by using a thin alkali metal chloride layer as an EIL. The electron injection barrier height between the Alq 3 layer and Mg:Ag cathode is reduced by inserting a thin alkali metal chloride as an EIL, which results in enhanced electron injection and electron current. Therefore, a better balance of hole and electron currents at the emissive interface is achieved and consequently the brightness and efficiency of OLEDs are improved. - Highlights: ► Alkaline metal chlorides were used as electron injection layers in organic light-emitting diodes based on Mg:Ag cathode. ► Brightness and efficiency of OLEDs with alkaline metal chlorides as electron injection layers were all greatly enhanced. ► The Improved OLED performance was attributed to the possible interfacial chemical reaction. ► Electron-only devices are fabricated to demonstrate the electron injection enhancement.

  10. Mechanism of hole injection enhancement in light-emitting diodes by inserting multiple hole-reservoir layers in electron blocking layer

    International Nuclear Information System (INIS)

    Zhao, Yukun; Wang, Shuai; Feng, Lungang; Li, Yufeng; Ding, Wen; Yun, Feng; Su, Xilin; Guo, Maofeng; Zhang, Ye

    2016-01-01

    In this study, gallium nitride (GaN) based light-emitting diodes (LEDs) with single and multiple hole-reservoir layers (HRLs) inserted in the electron-blocking layer (EBL) have been investigated numerically and experimentally. According to simulation results, a better electron confinement and a higher hole injection level can be achieved by the multiple HRLs inserted in the EBL region. To further reveal the underlying mechanism of hole injection enhancement experimentally, the active regions were intentionally designed to emit photons with three different wavelengths of 440 nm, 460 nm, and 480 nm, respectively. Based on the experimental results of photoluminescence (PL) and time-resolved PL (TRPL) measurements conducted at 298 K, the remarkable enhancement (148%) of PL intensities and significant increase in the decay times of the quantum wells close to p-GaN can be obtained. Therefore, the mechanism is proposed that carriers are able to reserve in the EBL region with multiple HRLs for a much longer time. Meanwhile, carriers could diffuse into the active region by tunnelling and/or thermo-electronic effect and then recombine efficiently, leading to the better carrier reservoir effect and higher hole injection in LEDs. As a result, by inserting multiple HRLs in the EBL region instead of single HRL, the experimental external quantum efficiency is enhanced by 19.8%, while the serious droop ratio is markedly suppressed from 37.0% to 27.6% at the high current injection of 100 A/cm 2 .

  11. Mechanism of hole injection enhancement in light-emitting diodes by inserting multiple hole-reservoir layers in electron blocking layer

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Yukun; Wang, Shuai; Feng, Lungang; Li, Yufeng; Ding, Wen [Key Laboratory of Physical Electronics and Devices of Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics and Information Technology, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Solid-State Lighting Engineering Research Center, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Yun, Feng, E-mail: fyun2010@mail.xjtu.edu.cn [Key Laboratory of Physical Electronics and Devices of Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics and Information Technology, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Solid-State Lighting Engineering Research Center, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Shaanxi Supernova Lighting Technology Co. Ltd, Xi' an, Shaanxi 710075 (China); Su, Xilin [Shaanxi Supernova Lighting Technology Co. Ltd, Xi' an, Shaanxi 710075 (China); Guo, Maofeng [Solid-State Lighting Engineering Research Center, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Shaanxi Supernova Lighting Technology Co. Ltd, Xi' an, Shaanxi 710075 (China); Zhang, Ye [Solid-State Lighting Engineering Research Center, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China)

    2016-03-14

    In this study, gallium nitride (GaN) based light-emitting diodes (LEDs) with single and multiple hole-reservoir layers (HRLs) inserted in the electron-blocking layer (EBL) have been investigated numerically and experimentally. According to simulation results, a better electron confinement and a higher hole injection level can be achieved by the multiple HRLs inserted in the EBL region. To further reveal the underlying mechanism of hole injection enhancement experimentally, the active regions were intentionally designed to emit photons with three different wavelengths of 440 nm, 460 nm, and 480 nm, respectively. Based on the experimental results of photoluminescence (PL) and time-resolved PL (TRPL) measurements conducted at 298 K, the remarkable enhancement (148%) of PL intensities and significant increase in the decay times of the quantum wells close to p-GaN can be obtained. Therefore, the mechanism is proposed that carriers are able to reserve in the EBL region with multiple HRLs for a much longer time. Meanwhile, carriers could diffuse into the active region by tunnelling and/or thermo-electronic effect and then recombine efficiently, leading to the better carrier reservoir effect and higher hole injection in LEDs. As a result, by inserting multiple HRLs in the EBL region instead of single HRL, the experimental external quantum efficiency is enhanced by 19.8%, while the serious droop ratio is markedly suppressed from 37.0% to 27.6% at the high current injection of 100 A/cm{sup 2}.

  12. Syringe-injectable electronics.

    Science.gov (United States)

    Liu, Jia; Fu, Tian-Ming; Cheng, Zengguang; Hong, Guosong; Zhou, Tao; Jin, Lihua; Duvvuri, Madhavi; Jiang, Zhe; Kruskal, Peter; Xie, Chong; Suo, Zhigang; Fang, Ying; Lieber, Charles M

    2015-07-01

    Seamless and minimally invasive three-dimensional interpenetration of electronics within artificial or natural structures could allow for continuous monitoring and manipulation of their properties. Flexible electronics provide a means for conforming electronics to non-planar surfaces, yet targeted delivery of flexible electronics to internal regions remains difficult. Here, we overcome this challenge by demonstrating the syringe injection (and subsequent unfolding) of sub-micrometre-thick, centimetre-scale macroporous mesh electronics through needles with a diameter as small as 100 μm. Our results show that electronic components can be injected into man-made and biological cavities, as well as dense gels and tissue, with >90% device yield. We demonstrate several applications of syringe-injectable electronics as a general approach for interpenetrating flexible electronics with three-dimensional structures, including (1) monitoring internal mechanical strains in polymer cavities, (2) tight integration and low chronic immunoreactivity with several distinct regions of the brain, and (3) in vivo multiplexed neural recording. Moreover, syringe injection enables the delivery of flexible electronics through a rigid shell, the delivery of large-volume flexible electronics that can fill internal cavities, and co-injection of electronics with other materials into host structures, opening up unique applications for flexible electronics.

  13. Syringe injectable electronics

    Science.gov (United States)

    Hong, Guosong; Zhou, Tao; Jin, Lihua; Duvvuri, Madhavi; Jiang, Zhe; Kruskal, Peter; Xie, Chong; Suo, Zhigang; Fang, Ying; Lieber, Charles M.

    2015-01-01

    Seamless and minimally-invasive three-dimensional (3D) interpenetration of electronics within artificial or natural structures could allow for continuous monitoring and manipulation of their properties. Flexible electronics provide a means for conforming electronics to non-planar surfaces, yet targeted delivery of flexible electronics to internal regions remains difficult. Here, we overcome this challenge by demonstrating syringe injection and subsequent unfolding of submicrometer-thick, centimeter-scale macroporous mesh electronics through needles with a diameter as small as 100 micrometers. Our results show that electronic components can be injected into man-made and biological cavities, as well as dense gels and tissue, with > 90% device yield. We demonstrate several applications of syringe injectable electronics as a general approach for interpenetrating flexible electronics with 3D structures, including (i) monitoring of internal mechanical strains in polymer cavities, (ii) tight integration and low chronic immunoreactivity with several distinct regions of the brain, and (iii) in vivo multiplexed neural recording. Moreover, syringe injection enables delivery of flexible electronics through a rigid shell, delivery of large volume flexible electronics that can fill internal cavities and co-injection of electronics with other materials into host structures, opening up unique applications for flexible electronics. PMID:26053995

  14. Improvement of electrostatic discharge characteristics of InGaN/GaN MQWs light-emitting diodes by inserting an n+-InGaN electron injection layer and a p-InGaN/GaN hole injection layer

    International Nuclear Information System (INIS)

    Jia, Chuanyu; Zhong, Cantao; Yu, Tongjun; Wang, Zhe; Tong, Yuzhen; Zhang, Guoyi

    2012-01-01

    To improve the electrostatic discharge properties of InGaN/GaN LEDs, an n + -InGaN electron injection layer and a p-InGaN/GaN hole injection layer were inserted beneath and above the InGaN/GaN MQWs. The influences of activated donor concentration in n + -InGaN and acceptor concentration in p-InGaN/GaN and on the depletion width and the internal capacitance of GaN-based n + -P LED have been investigated. Our research results indicated that the capacitance of GaN-based n + -P LED is mainly determined by the depletion width which is dependent on the activated acceptor concentration N A in the p-InGaN/GaN hole injection layer. The relationship between the internal capacitance of InGaN–LEDs and the electrostatic discharge (ESD) properties was also investigated. It was found that the LEDs with large internal capacitance were more resistant to external ESD impulses. With optimized LED structures with n + -InGaN layer and a p-InGaN/GaN SLs, the HBM-ESD pass yield at −1500 V reached 95%, much higher than the value of 15% in reference samples without inserting layers above. (paper)

  15. Electron injection in microtron

    International Nuclear Information System (INIS)

    Axinescu, S.

    1977-01-01

    A review of the methods of injecting electrons in the microtron is presented. A special attention is paid to efficient injection systems developed by Wernholm and Kapitza. A comparison of advantages and disadvantages of both systems is made in relation to the purpose of the microtron. (author)

  16. Enhancing carrier injection in the active region of a 280nm emission wavelength LED using graded hole and electron blocking layers

    KAUST Repository

    Janjua, Bilal

    2014-02-27

    A theoretical investigation of AlGaN UV-LED with band engineering of hole and electron blocking layers (HBL and EBL, respectively) was conducted with an aim to improve injection efficiency and reduce efficiency droop in the UV LEDs. The analysis is based on energy band diagrams, carrier distribution and recombination rates (Shockley-Reed-Hall, Auger, and radiative recombination rates) in the quantum well, under equilibrium and forward bias conditions. Electron blocking layer is based on AlaGa1-aN / Al b → cGa1-b → 1-cN / AldGa 1-dN, where a < d < b < c. A graded layer sandwiched between large bandgap AlGaN materials was found to be effective in simultaneously blocking electrons and providing polarization field enhanced carrier injection. The graded interlayer reduces polarization induced band bending and mitigates the related drawback of impediment of holes injection. Similarly on the n-side, the Alx → yGa1-x → 1-yN / AlzGa 1-zN (x < z < y) barrier acts as a hole blocking layer. The reduced carrier leakage and enhanced carrier density in the active region results in significant improvement in radiative recombination rate compared to a structure with the conventional rectangular EBL layers. The improvement in device performance comes from meticulously designing the hole and electron blocking layers to increase carrier injection efficiency. The quantum well based UV-LED was designed to emit at 280nm, which is an effective wavelength for water disinfection application.

  17. Electron spin injection from a regrown Fe layer in a spin-polarized vertical-cavity surface-emitting laser

    Science.gov (United States)

    Holub, M.; Bhattacharya, P.; Shin, J.; Saha, D.

    2007-04-01

    An electroluminescence circular polarization of 23% and threshold current reduction of 11% are obtained in an electrically pumped spin-polarized vertical-cavity surface-emitting laser. Electron spin injection is accomplished utilizing a regrown Fe/ n-AlGaAs Schottky tunnel barrier deposited around the base of the laser mesas. Negligible circular polarizations and threshold current reductions are measured for nonmagnetic and Fe-based control VCSELs, which provides convincing evidence of spin injection, transport, and detection in our spin-polarized laser.

  18. Improved electron transport layer

    DEFF Research Database (Denmark)

    2012-01-01

    The present invention provides: a method of preparing a coating ink for forming a zinc oxide electron transport layer, comprising mixing zinc acetate and a wetting agent in water or methanol; a coating ink comprising zinc acetate and a wetting agent in aqueous solution or methanolic solution......; a method of preparing a zinc oxide electron transporting layer, which method comprises: i) coating a substrate with the coating ink of the present invention to form a film; ii) drying the film; and iii) heating the dry film to convert the zinc acetate substantially to ZnO; a method of preparing an organic...... photovoltaic device or an organic LED having a zinc oxide electron transport layer, the method comprising, in this order: a) providing a substrate bearing a first electrode layer; b) forming an electron transport layer according to the following method: i) coating a coating ink comprising an ink according...

  19. Surface tailoring of newly developed amorphous Znsbnd Sisbnd O thin films as electron injection/transport layer by plasma treatment: Application to inverted OLEDs and hybrid solar cells

    Science.gov (United States)

    Yang, Hongsheng; Kim, Junghwan; Yamamoto, Koji; Xing, Xing; Hosono, Hideo

    2018-03-01

    We report a unique amorphous oxide semiconductor Znsbnd Sisbnd O (a-ZSO) which has a small work function of 3.4 eV for as-deposited films. The surface modification of a-ZSO thin films by plasma treatments is examined to apply it to the electron injection/transport layer of organic devices. It turns out that the energy alignment and exciton dissociation efficiency at a-ZSO/organic semiconductor interface significantly changes by choosing different gas (oxygen or argon) for plasma treatments (after a-ZSO was exposed to atmospheric environment for 5 days). In situ ultraviolet photoelectron spectroscopy (UPS) measurement reveals that the work function of a-ZSO is increased to 4.0 eV after an O2-plasma treatment, while the work function of 3.5 eV is recovered after an Ar-plasma treatment which indicates this treatment is effective for surface cleaning. To study the effects of surface treatments to device performance, OLEDs and hybrid polymer solar cells with O2-plasma or Ar-plasma treated a-ZSO are compared. Effects of these surface treatments on performance of inverted OLEDs and hybrid polymer solar cells are examined. Ar-plasma treated a-ZSO works well as the electron injection layer in inverted OLEDs (Alq3/a-ZSO) because the injection barrier is small (∼ 0.1 eV). On the other hands, O2-plasma treated a-ZSO is more suitable for application to hybrid solar cells which is benefiting from higher exciton dissociation efficiency at polymer (P3HT)/ZSO interface.

  20. Highly efficient tandem OLED based on C{sub 60}/rubrene: MoO{sub 3} as charge generation layer and LiF/Al as electron injection layer

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yang [School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384 (China); Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin 300384 (China); Tianjin Key Laboratory of Photoelectric Materials and Devices, Tianjin 300384 (China); College of Science, Tianjin University of Technology, Tianjin 300384 (China); Wu, Xiaoming, E-mail: wxm@tjut.edu.cn [School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384 (China); Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin 300384 (China); Tianjin Key Laboratory of Photoelectric Materials and Devices, Tianjin 300384 (China); Xiao, Zhihui; Gao, Jian; Zhang, Juan; Rui, Hongsong; Lin, Xin; Zhang, Nan; Hua, Yulin [School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384 (China); Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin 300384 (China); Tianjin Key Laboratory of Photoelectric Materials and Devices, Tianjin 300384 (China); Yin, Shougen, E-mail: sgyin@tjut.edu.cn [School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384 (China); Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin 300384 (China); Tianjin Key Laboratory of Photoelectric Materials and Devices, Tianjin 300384 (China)

    2017-08-15

    Highlights: • Highly efficient blue fluorescent tandem OLEDs are fabricated. • The optimal tandem OLED consists of C{sub 60}/rubrene: MoO{sub 3} as a CGL and LiF/Al as an EIL. • Current efficiency and power efficiency of optimal tandem OLED is markedly enhanced. • The turn-on and driving voltages of optimal tandem OLED is obviously reduced. - Abstract: Tandem organic light-emitting diodes (OLEDs) have received much attention in solid-state lighting due to their high current efficiency, long lifetime and excellent stability. The highly efficient blue fluorescent tandem OLEDs based on the charge generation layer (CGL) of C{sub 60}/rubrene: MoO{sub 3} and the electron injection layer (EIL) of LiF/Al were fabricated. The ultra-thin Al layer in EIL was introduced to further increase electron injection from CGL to the emission unit. We found that the maximal current efficiency and power efficiency of optimal tandem device can reach to 43.1 cd/A and 15.1 lm/W, respectively, which are approximately 2.8 and 1.9 times compared with those of single-emissive-unit device. Moreover, compared with the traditional tandem device, the driving voltage of the optimal device is reduced by 6 V, and the turn-on voltage is reduced by 2.4 V. We analyzed the mechanism and characterization of these tandem devices. The effective charge separation and transport of C{sub 60}/rubrene: MoO{sub 3}, and excellent electron injection ability of ultra-thin Al layer are the main factors for the remarkable enhancement in both current efficiency and power efficiency of tandem OLEDs.

  1. Injection into electron plasma traps

    International Nuclear Information System (INIS)

    Gorgadze, Vladimir; Pasquini, Thomas A.; Fajans, Joel; Wurtele, Jonathan S.

    2003-01-01

    Computational studies and experimental measurements of plasma injection into a Malmberg-Penning trap reveal that the number of trapped particles can be an order of magnitude higher than predicted by a simple estimates based on a ballistic trapping model. Enhanced trapping is associated with a rich nonlinear dynamics generated by the space-charge forces of the evolving trapped electron density. A particle-in-cell simulation is used to identify the physical mechanisms that lead to the increase in trapped electrons. The simulations initially show strong two-stream interactions between the electrons emitted from the cathode and those reflected off the end plug of the trap. This is followed by virtual cathode oscillations near the injection region. As electrons are trapped, the initially hollow longitudinal phase-space is filled, and the transverse radial density profile evolves so that the plasma potential matches that of the cathode. Simple theoretical arguments are given that describe the different dynamical regimes. Good agreement is found between simulation and theory

  2. Diffusive scattering of electrons by electron holes around injection fronts

    Science.gov (United States)

    Vasko, I. Y.; Agapitov, O. V.; Mozer, F. S.; Artemyev, A. V.; Krasnoselskikh, V. V.; Bonnell, J. W.

    2017-03-01

    Van Allen Probes have detected nonlinear electrostatic spikes around injection fronts in the outer radiation belt. These spikes include electron holes (EH), double layers, and more complicated solitary waves. We show that EHs can efficiently scatter electrons due to their substantial transverse electric fields. Although the electron scattering driven by EHs is diffusive, it cannot be evaluated via the standard quasi-linear theory. We derive analytical formulas describing local electron scattering by a single EH and verify them via test particle simulations. We show that the most efficiently scattered are gyroresonant electrons (crossing EH on a time scale comparable to the local electron gyroperiod). We compute bounce-averaged diffusion coefficients and demonstrate their dependence on the EH spatial distribution (latitudinal extent and spatial filling factor) and individual EH parameters (amplitude of electrostatic potential, velocity, and spatial scales). We show that EHs can drive pitch angle scattering of ≲5 keV electrons at rates 10-2-10-4 s-1 and, hence, can contribute to electron losses and conjugated diffuse aurora brightenings. The momentum and pitch angle scattering rates can be comparable, so that EHs can also provide efficient electron heating. The scattering rates driven by EHs at L shells L ˜ 5-8 are comparable to those due to chorus waves and may exceed those due to electron cyclotron harmonics.

  3. Tunneling spin injection into single layer graphene.

    Science.gov (United States)

    Han, Wei; Pi, K; McCreary, K M; Li, Yan; Wong, Jared J I; Swartz, A G; Kawakami, R K

    2010-10-15

    We achieve tunneling spin injection from Co into single layer graphene (SLG) using TiO₂ seeded MgO barriers. A nonlocal magnetoresistance (ΔR(NL)) of 130  Ω is observed at room temperature, which is the largest value observed in any material. Investigating ΔR(NL) vs SLG conductivity from the transparent to the tunneling contact regimes demonstrates the contrasting behaviors predicted by the drift-diffusion theory of spin transport. Furthermore, tunnel barriers reduce the contact-induced spin relaxation and are therefore important for future investigations of spin relaxation in graphene.

  4. High-performance flexible inverted organic light-emitting diodes by exploiting MoS2nanopillar arrays as electron-injecting and light-coupling layers.

    Science.gov (United States)

    Guo, Kunping; Si, Changfeng; Han, Ceng; Pan, Saihu; Chen, Guo; Zheng, Yanqiong; Zhu, Wenqing; Zhang, Jianhua; Sun, Chang; Wei, Bin

    2017-10-05

    Inverted organic light-emitting diodes (IOLEDs) on plastic substrates have great potential application in flexible active-matrix displays. High energy consumption, instability and poor electron injection are key issues limiting the commercialization of flexible IOLEDs. Here, we have systematically investigated the electrooptical properties of molybdenum disulfide (MoS 2 ) and applied it in developing highly efficient and stable blue fluorescent IOLEDs. We have demonstrated that MoS 2 -based IOLEDs can significantly improve electron-injecting capacity. For the MoS 2 -based device on plastic substrates, we have achieved a very high external quantum efficiency of 7.3% at the luminance of 9141 cd m -2 , which is the highest among the flexible blue fluorescent IOLEDs reported. Also, an approximately 1.8-fold improvement in power efficiency was obtained compared to glass-based IOLEDs. We attributed the enhanced performance of flexible IOLEDs to MoS 2 nanopillar arrays due to their light extraction effect. The van der Waals force played an important role in the formation of MoS 2 nanopillar arrays by thermal evaporation. Notably, MoS 2 -based flexible IOLEDs exhibit an intriguing efficiency roll-up, that is, the current efficiency increases slightly from 14.0 to 14.6 cd A -1 with the luminance increasing from 100 to 5000 cd m -2 . In addition, we observed that the initial brightness of 500 cd m -2 can be maintained at 97% after bending for 500 cycles, demonstrating the excellent mechanical stability of flexible IOLEDs. Furthermore, we have successfully fabricated a transparent, flexible IOLED with low efficiency roll-off at high current density.

  5. Electron injection in semiconductor drift detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.; Longoni, A.; Sampietro, M.; Castoldi, A.; Vacchi, A.

    1990-01-01

    The paper reports the first successful results of a simple MOS structure to inject electrons at a given position in Silicon Drift Detectors. The structure allows on-line calibration of the drift velocity of electrons within the detector. The calibration is a practical method to trace the temperature dependence of the electron mobility. Several of these injection structures can be implemented in silicon drift detectors without additional steps in the fabrication process

  6. Optoelectronic device with nanoparticle embedded hole injection/transport layer

    Science.gov (United States)

    Wang, Qingwu [Chelmsford, MA; Li, Wenguang [Andover, MA; Jiang, Hua [Methuen, MA

    2012-01-03

    An optoelectronic device is disclosed that can function as an emitter of optical radiation, such as a light-emitting diode (LED), or as a photovoltaic (PV) device that can be used to convert optical radiation into electrical current, such as a photovoltaic solar cell. The optoelectronic device comprises an anode, a hole injection/transport layer, an active layer, and a cathode, where the hole injection/transport layer includes transparent conductive nanoparticles in a hole transport material.

  7. Origin of Enhanced Hole Injection in Organic Light-Emitting Diodes with an Electron-Acceptor Doping Layer: p-Type Doping or Interfacial Diffusion?

    Science.gov (United States)

    Zhang, Lei; Zu, Feng-Shuo; Deng, Ya-Li; Igbari, Femi; Wang, Zhao-Kui; Liao, Liang-Sheng

    2015-06-10

    The electrical doping nature of a strong electron acceptor, 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HATCN), is investigated by doping it in a typical hole-transport material, N,N'-bis(naphthalen-1-yl)-N,N'-diphenylbenzidine (NPB). A better device performance of organic light-emitting diodes (OLEDs) was achieved by doping NPB with HATCN. The improved performance could, in principle, arise from a p-type doping effect in the codeposited thin films. However, physical characteristics evaluations including UV-vis absorption, Fourier transform infrared absorption, and X-ray photoelectron spectroscopy demonstrated that there was no obvious evidence of charge transfer in the NPB:HATCN composite. The performance improvement in NPB:HATCN-based OLEDs is mainly attributed to an interfacial modification effect owing to the diffusion of HATCN small molecules. The interfacial diffusion effect of the HATCN molecules was verified by the in situ ultraviolet photoelectron spectroscopy evaluations.

  8. PEDOT:PSS/Graphene Nanocomposite Hole-Injection Layer in Polymer Light-Emitting Diodes

    Directory of Open Access Journals (Sweden)

    Chun-Hsuan Lin

    2012-01-01

    Full Text Available We report on effects of doping graphene in poly(3,4-ethylenedioxythiophene: poly(styrene sulfonate, PEDOT:PSS, as a PEDOT:PSS/graphene nanocomposite hole injection layer on the performance enhancement of polymer light-emitting diodes (PLEDs. Graphene oxides were first synthesized and then mixed in the PEDOT:PSS solution with specifically various amounts. Graphenes were reduced in the PEDOT:PSS matrix through thermal reduction. PLED devices with hole-injection nanocomposite layer containing particular doping concentration were fabricated, and the influence of doping concentration on device performance was examined by systematically characterizations of various device properties. Through the graphene doping, the resistance in the hole-injection layer and the turn-on voltage could be effectively reduced that benefited the injection and transport of holes and resulted in a higher overall efficiency. The conductivity of the hole-injection layer was monotonically increased with the increase of doping concentration, performance indices from various aspects, however, did not show the same dependence because faster injected holes might alter not only the balance of holes and electrons but also their combination locations in the light-emitting layer. Results show that optimal doping concentration was the case with 0.03 wt% of graphene oxide.

  9. Counting graphene layers with very slow electrons

    Energy Technology Data Exchange (ETDEWEB)

    Frank, Ludĕk; Mikmeková, Eliška; Müllerová, Ilona [Institute of Scientific Instruments AS CR, v.v.i., Královopolská 147, 61264 Brno (Czech Republic); Lejeune, Michaël [Laboratoire de Physique de la Matière Condensée, Faculté des Sciences d' Amiens, Universite de Picardie Jules Verne, 33 rue Saint Leu, 80039 Amiens Cedex 2 (France)

    2015-01-05

    The study aimed at collection of data regarding the transmissivity of freestanding graphene for electrons across their full energy scale down to the lowest energies. Here, we show that the electron transmissivity of graphene drops with the decreasing energy of the electrons and remains below 10% for energies below 30 eV, and that the slow electron transmissivity value is suitable for reliable determination of the number of graphene layers. Moreover, electrons incident below 50 eV release adsorbed hydrocarbon molecules and effectively clean graphene in contrast to faster electrons that decompose these molecules and create carbonaceous contamination.

  10. On the AlxGa1-xN/AlyGa1-yN/AlxGa1-xN (x>y) p-electron blocking layer to improve the hole injection for AlGaN based deep ultraviolet light-emitting diodes

    Science.gov (United States)

    Chu, Chunshuang; Tian, Kangkai; Fang, Mengqian; Zhang, Yonghui; Li, Luping; Bi, Wengang; Zhang, Zi-Hui

    2018-01-01

    This work proposes the [0001] oriented AlGaN-based deep ultraviolet (DUV) light-emitting diode (LED) possessing a specifically designed p-electron blocking layer (p-EBL) to achieve the high internal quantum efficiency. Both electrons and holes can be efficiently injected into the active region by adopting the Al0.60Ga0.40N/Al0.50Ga0.50N/Al0.60Ga0.40N structured p-EBL, in which a p-Al0.50Ga0.50N layer is embedded into the p-EBL. Moreover, the impact of different thicknesses for the p-Al0.50Ga0.50N insertion layer on the hole and electron injections has also been investigated. Compared with the DUV LED with the bulk p-Al0.60Ga0.40N as the EBL, the proposed LED architectures improve the light output power if the thickness of the p-Al0.50Ga0.50N insertion layer is properly designed.

  11. Ordered and ultrathin reduced graphene oxide LB films as hole injection layers for organic light-emitting diode.

    Science.gov (United States)

    Yang, Yajie; Yang, Xiaojie; Yang, Wenyao; Li, Shibin; Xu, Jianhua; Jiang, Yadong

    2014-01-01

    In this paper, we demonstrated the utilization of reduced graphene oxide (RGO) Langmuir-Blodgett (LB) films as high performance hole injection layer in organic light-emitting diode (OLED). By using LB technique, the well-ordered and thickness-controlled RGO sheets are incorporated between the organic active layer and the transparent conducting indium tin oxide (ITO), leading to an increase of recombination between electrons and holes. Due to the dramatic increase of hole carrier injection efficiency in RGO LB layer, the device luminance performance is greatly enhanced comparable to devices fabricated with spin-coating RGO and a commercial conducting polymer PEDOT:PSS as the hole transport layer. Furthermore, our results indicate that RGO LB films could be an excellent alternative to commercial PEDOT:PSS as the effective hole transport and electron blocking layer in light-emitting diode devices.

  12. Giant tunnel-electron injection in nitrogen-doped graphene

    DEFF Research Database (Denmark)

    Lagoute, Jerome; Joucken, Frederic; Repain, Vincent

    2015-01-01

    Scanning tunneling microscopy experiments have been performed to measure the local electron injection in nitrogen-doped graphene on SiC(000) and were successfully compared to ab initio calculations. In graphene, a gaplike feature is measured around the Fermi level due to a phonon-mediated tunneling...... and at carbon sites. Nitrogen doping can therefore be proposed as a way to improve tunnel-electron injection in graphene....

  13. DIRECTLY INJECTED FORCED CONVECTION COOLING FOR ELECTRONICS

    NARCIS (Netherlands)

    Brok, Gerrit Johannes Hendrikus Maria; Wits, Wessel Willems; Mannak, Jan Hendrik; Legtenberg, Rob

    2012-01-01

    Electronic circuitry includes a circuit board and at least one component mounted on the circuit board, with the at least one component generating heat while in use. The circuit board includes one or more apertures aligned with one or more respective components, and the electronic circuitry is

  14. Organic electronic devices with multiple solution-processed layers

    Science.gov (United States)

    Forrest, Stephen R.; Lassiter, Brian E.; Zimmerman, Jeramy D.

    2015-08-04

    A method of fabricating a tandem organic photosensitive device involves depositing a first layer of an organic electron donor type material film by solution-processing of the organic electron donor type material dissolved in a first solvent; depositing a first layer of an organic electron acceptor type material over the first layer of the organic electron donor type material film by a dry deposition process; depositing a conductive layer over the interim stack by a dry deposition process; depositing a second layer of the organic electron donor type material over the conductive layer by solution-processing of the organic electron donor type material dissolved in a second solvent, wherein the organic electron acceptor type material and the conductive layer are insoluble in the second solvent; depositing a second layer of an organic electron acceptor type material over the second layer of the organic electron donor type material film by a dry deposition process, resulting in a stack.

  15. Counting graphene layers with very slow electrons

    Czech Academy of Sciences Publication Activity Database

    Frank, Luděk; Mikmeková, Eliška; Müllerová, Ilona; Lejeune, M.

    2015-01-01

    Roč. 106, 09 JAN (2015), 013117:1-5 ISSN 0003-6951 R&D Projects: GA TA ČR(CZ) TE01020118; GA MŠk(CZ) LO1212 Institutional support: RVO:68081731 Keywords : graphene * ultralow energy STEM * counting graphene layers * clean ing of graphene * 2D crystals Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 3.142, year: 2015

  16. Electron injection by evolution of self-modulated laser wakefields

    International Nuclear Information System (INIS)

    Kim, Changbum; Kim, Guang-Hoon; Kim, Jong-Uk; Lee, Hae June; Suk, Hyyong; Ko, In Soo

    2003-01-01

    Self-injection mechanisms in the self-modulated laser wakefield acceleration (SM-LWFA) are investigated. Two-dimensional (2D) particle-in-cell (PIC) simulations show that a significant amount of plasma electrons can be self-injected into the acceleration phase of a laser wakefield by a dynamic increase in the wake wavelength in the longitudinal direction. In this process, it is found that the wake wavelength increases due to the relativistic effect and this leads to a large amount of electron injection into the wakefields. In this paper, the injection phenomena are studied with 2D simulations and a brief explanation of the new self-injection mechanism is presented. (author)

  17. DIRECTLY INJECTED FORCED CONVECTION COOLING FOR ELECTRONICS

    NARCIS (Netherlands)

    Brok, Gerrit Johannes Hendrikus Maria; Wits, Wessel Willems; Mannak, Jan Hendrik; Legtenberg, Rob

    2009-01-01

    Electronic circuitry comprises a circuit board (34) and at least one component (30,32) mounted on the circuit board (34), wherein the at least one component (30,32) generates heat in use, the circuit board (34) includes at least one aperture (48, 50) aligned with the component (30,32) or a

  18. DIRECTLY INJECTED FORCED CONVENTION COOLING FOR ELECTRONICS

    NARCIS (Netherlands)

    Brok Gerrit Johannes Hendridus, Maria; Wits, Wessel Willems; Mannak, Jan Hendrik; Legtenberg, Rob; Brok, Gerrit Johannes Hendrikus Maria

    2011-01-01

    Electronic circuitry comprises a circuit board (34) and at least one component (30,32) mounted on the circuit board (34), wherein the at least one component (30,32) generates heat in use, the circuit board (34) includes at least one aperture (48, 50) aligned with the component (30,32) or a

  19. Efficient Injection of Electron Beams into Magnetic Guide Fields

    International Nuclear Information System (INIS)

    Chorny, V.; Cooperstein, G.; Dubyna, V.; Frolov, O.; Harper-Slaboszewicz, V.; Hinshelwood, D.; Schneider, R.; Solovyov, V.; Tsepilov, H.; Vitkovitsky, I.; Ware, K.

    1999-01-01

    Preliminary experimental and modeling study of injection and transport of high current electron beams in current-neutralized background gas has been performed. Initial analysis of the results indicates that high current triaxial ring diode operates very reproducibly in the pinch mode. High current density beam can be injected efficiently into the drift region, using azimuthal guide field with reduced intensity near the injection region. This was shown to improve the effectiveness of capturing the beam for the transport. The transport length was insufficient to measure losses, such as would arise from scattering with the background gas

  20. Electron beam injection during active experiments. I - Electromagnetic wave emissions

    Science.gov (United States)

    Winglee, R. M.; Kellogg, P. J.

    1990-01-01

    The wave emissions produced in Echo 7 experiment by active injections of electron beams were investigated to determine the properties of the electromagnetic and electrostatic fields for both the field-aligned and cross-field injection in such experiments and to evaluate the sources of free energy and relative efficiencies for the generation of the VLF and HF emissions. It is shown that, for typical beam energies in active experiments, electromagnetic effects do not substantially change the bulk properties of the beam, spacecraft charging, and plasma particle acceleration. Through simulations, beam-generated whistlers; fundamental z-mode and harmonic x-mode radiation; and electrostatic electron-cyclotron, upper-hybrid, Langmuir, and lower-hybrid waves were identified. The characteristics of the observed wave spectra were found to be sensitive to both the ratio of the electron plasma frequency to the cyclotron frequency and the angle of injection relative to the magnetic field.

  1. Multifunctional bulk plasma source based on discharge with electron injection.

    Science.gov (United States)

    Klimov, A S; Medovnik, A V; Tyunkov, A V; Savkin, K P; Shandrikov, M V; Vizir, A V

    2013-01-01

    A bulk plasma source, based on a high-current dc glow discharge with electron injection, is described. Electron injection and some special design features of the plasma arc emitter provide a plasma source with very long periods between maintenance down-times and a long overall lifetime. The source uses a sectioned sputter-electrode array with six individual sputter targets, each of which can be independently biased. This discharge assembly configuration provides multifunctional operation, including plasma generation from different gases (argon, nitrogen, oxygen, acetylene) and deposition of composite metal nitride and oxide coatings.

  2. Electron injection dynamics in high-potential porphyrin photoanodes.

    Science.gov (United States)

    Milot, Rebecca L; Schmuttenmaer, Charles A

    2015-05-19

    There is a growing need to utilize carbon neutral energy sources, and it is well known that solar energy can easily satisfy all of humanity's requirements. In order to make solar energy a viable alternative to fossil fuels, the problem of intermittency must be solved. Batteries and supercapacitors are an area of active research, but they currently have relatively low energy-to-mass storage capacity. An alternative and very promising possibility is to store energy in chemical bonds, or make a solar fuel. The process of making solar fuel is not new, since photosynthesis has been occurring on earth for about 3 billion years. In order to produce any fuel, protons and electrons must be harvested from a species in its oxidized form. Photosynthesis uses the only viable source of electrons and protons on the scale needed for global energy demands: water. Because artificial photosynthesis is a lofty goal, water oxidation, which is a crucial step in the process, has been the initial focus. This Account provides an overview of how terahertz spectroscopy is used to study electron injection, highlights trends from previously published reports, and concludes with a future outlook. It begins by exploring similarities and differences between dye-sensitized solar cells (DSSCs) for producing electricity and a putative device for splitting water and producing a solar fuel. It then identifies two important problems encountered when adapting DSSC technology to water oxidation-improper energy matching between sensitizer energy levels with the potential for water oxidation and the instability of common anchoring groups in water-and discusses steps to address them. Emphasis is placed on electron injection from sensitizers to metal oxides because this process is the initial step in charge transport. Both the rate and efficiency of electron injection are analyzed on a sub-picosecond time scale using time-resolved terahertz spectroscopy (TRTS). Bio-inspired pentafluorophenyl porphyrins are

  3. Efficient scattering of electrons below few keV by Time Domain Structures around injection fronts

    Science.gov (United States)

    Vasko, I.; Agapitov, O. V.; Mozer, F.; Artemyev, A.; Krasnoselskikh, V.

    2016-12-01

    Van Allen Probes observations show an abundance of non-linear large-amplitude electrostatic spikes around injection fronts in the outer radiation belt. These spikes referred to as Time Domain Structures (TDS) include electron holes, double layers and more complicated solitary waves. The electron scattering driven by TDS may not be evaluated via the standard quasi-linear theory, since TDS are in principle non-linear plasma modes. In this paper we analyze the scattering of electrons by three-dimensional TDS (with non-negligible perpendicular electric field) around injection fronts. We derive the analytical formulas describing the local scattering by single TDS and show that the most efficiently scattered electrons are those in the first cyclotron resonance (electrons crossing TDS on a time scale comparable with their gyroperiod). The analytical formulas are verified via the test-particle simulation. We compute the bounce-averaged diffusion coefficients and demonstrate their dependence on the TDS spatial distribution, individual TDS parameters and L shell. We show that TDS are able to provide the pitch-angle scattering of <5 keV electrons at rate 10-2-10-4 s-1 and, thus, can be responsible for driving loss of electrons out of injections fronts on a time scale from few minutes to few hours. TDS can be, thus, responsible for driving diffuse aurora precipitations conjugated to injection fronts. We show that the pitch-angle scattering rates driven by TDS are comparable with those due to chorus waves and exceed those due to electron cyclotron harmonics. For injections fronts with no significant wave activity in the frequency range corresponding to chorus waves, TDS can be even dominant mechanism for losses of below few keV electrons.

  4. MODELING OF ELECTRONIC GASOLINE INJECTION PROCESSES IN TWO STROKE ENGINE

    Directory of Open Access Journals (Sweden)

    Hraivoronskyi, Y.

    2013-06-01

    Full Text Available Basic provision of the processes developed mode, occurring in ignition fuel system with electronically controlled two stroke engine with positive ignition are given. Fuel injection process’ calculation results for the case of placing fuel injector into intake system presented.

  5. Electric potential structures and propagation of electron beams injected from a spacecraft into a plasma

    Science.gov (United States)

    Singh, Nagendra; Hwang, K. S.

    1988-01-01

    One-dimensional Vlasov simulations are used to study the propagation of electron beams injected from a spacecraft into an ambient plasma and the associated potential structures. It is shown that, for a given beam velocity, the propagation velocity and the potential structure depends on the beam density. In the case of moderate beams, a double layer forms near the beam head which propagates into the ambient plasma much more slowly than the initial beam velocity.

  6. Influence of the hole injection layer on the luminescent performance of organic light-emitting diodes

    Science.gov (United States)

    Chen, Shih-Fang; Wang, Ching-Wu

    2004-08-01

    We investigate the influence of the hole injection layer (HIL) on the performance of vapor-deposited tris-(8-hydroxyquinoline) aluminum-based organic light-emitting diodes. Four different HIL materials were used: 4,4', 4″-tris{N ,(3-methylphenyl)-N-phenylamino}-triphenylamine) (m-MTDATA), 4,4', 4″-tris{N ,-(2-naphthyl)-N-phenylamino}-triphenylamine, copper phthalocyanine, and oxotitanium phthalocyanine. In all cases, Alq3 acts as the emitting layer as well as electron-transporting layers. Evidence showed that m-MTDATA exhibits a dense film structure and fine surface morphology, leading to easier hole migration at the indium tin oxide/m-MTDATA and m-MTDATA/hole-transport layer junctions. It also possesses a shallow bulk trap level, providing more detrapping holes from the bulk trap states to highest occupied molecular orbital states for transporting in m-MTDATA. We suggest that these are the main contributing factors to the superior current density-voltage and luminance-voltage performance of this device.

  7. Injection, compression and confinement of electrons in a magnetic mirror

    International Nuclear Information System (INIS)

    Fisher, A.

    1975-01-01

    A Helmholtz coil configuration has been constructed where the magnetic field can be increased to about 10 kGauss in 20 μsec. Electrons are injected from a hot tantalum filament between two plates across which a potential of about 5 keV is applied. The electric field E is perpendicular to the magnetic field B so that the direction of the E x B drift is radial--into the magnetic mirror. About 10 14 electrons were injected and about 10 13 electrons were trapped. The initial electron energy was about 5 keV and after compression 500 keV x-rays were observed. The confinement time is very sensitive to vacuum. Confinement times of milliseconds and good compression were observed at vacuum of 5.10 -5 torr or less. Above 5.10 -5 torr there was no trapping or compression. After a compressed ring of electrons was formed, it was released by a pulse applied to one of the Helmholtz coils that reduced the field. Ejection of the electron ring was observed by x-ray measurements

  8. Solution-processable organic-inorganic hybrid hole injection layer for high efficiency phosphorescent organic light-emitting diodes.

    Science.gov (United States)

    Lee, Min Hsuan; Choi, Wing Hong; Zhu, Furong

    2016-03-21

    The presence of a solution-processed hybrid PSS-MoO3-based hole injection layer (HIL) promotes a good interfacial contact between the indium tin oxide anode and hole-transporting layer for efficient operation of organic light-emitting diodes (OLEDs). This work reveals that the use of the hybrid HIL benefits the performance of phosphorescent OLEDs in two ways: (1) to assist in efficient hole injection, thereby improving power efficiency of OLEDs, and (2) to improve electron-hole current balance and suppression of interfacial defects at the organic/anode interface. The combined effects result in the power efficiency of 89.2 lm/W and external quantum efficiency of 23.9% for phosphorescent green OLEDs. The solution-processed hybrid PSS-MoO3-based HIL is beneficial for application in solution-processed organic electronic devices.

  9. Electronic energy loss spectra from mono-layer to few layers of phosphorene

    Energy Technology Data Exchange (ETDEWEB)

    Mohan, Brij, E-mail: brijmohanhpu@yahoo.com; Thakur, Rajesh; Ahluwalia, P. K. [Department of Physics, Himachal Pradesh University, Shimla (HP) India 171005 (India)

    2016-05-23

    Using first principles calculations, electronic and optical properties of few-layers phosphorene has been investigated. Electronic band structure show a moderate band gap of 0.9 eV in monolayer phosphorene which decreases with increasing number of layers. Optical properties of few-layers of phosphorene in infrared and visible region shows tunability with number of layers. Electron energy loss function has been plotted and huge red shift in plasmonic behaviours is found. These tunable electronic and optical properties of few-layers of phosphorene can be useful for the applications of optoelectronic devices.

  10. Role of the inversion layer on the charge injection in silicon nanocrystal multilayered light emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Tondini, S. [Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, 38123 Trento (Italy); Dipartimento di Fisica, Informatica e Matematica, Università di Modena e Reggio Emilia, Via Campi 213/a, 41125 Modena (Italy); Pucker, G. [Advanced Photonics and Photovoltaics Group, Bruno Kessler Foundation, Via Sommarive 18, 38123 Trento (Italy); Pavesi, L. [Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, 38123 Trento (Italy)

    2016-09-07

    The role of the inversion layer on injection and recombination phenomena in light emitting diodes (LEDs) is here studied on a multilayer (ML) structure of silicon nanocrystals (Si-NCs) embedded in SiO{sub 2}. Two Si-NC LEDs, which are similar for the active material but different in the fabrication process, elucidate the role of the non-radiative recombination rates at the ML/substrate interface. By studying current- and capacitance-voltage characteristics as well as electroluminescence spectra and time-resolved electroluminescence under pulsed and alternating bias pumping scheme in both the devices, we are able to ascribe the different experimental results to an efficient or inefficient minority carrier (electron) supply by the p-type substrate in the metal oxide semiconductor LEDs.

  11. Externally Controlled Injection of Electrons by a Laser Pulse in a Laser Wakefield Electron Accelerator

    CERN Document Server

    Chen Szu Yuan; Chen Wei Ting; Chien, Ting-Yei; Lee, Chau-Hwang; Lin, Jiunn-Yuan; Wang, Jyhpyng

    2005-01-01

    Spatially and temporally localized injection of electrons is a key element for development of plasma-wave electron accelerator. Here we report the demonstration of two different schemes for electron injection in a self-modulated laser wakefield accelerator (SM-LWFA) by using a laser pulse. In the first scheme, by implementing a copropagating laser prepulse with proper timing, we are able to control the growth of Raman forward scattering and the production of accelerated electrons. We found that the stimulated Raman backward scattering of the prepulse plays the essential role of injecting hot electrons into the fast plasma wave driven by the pump pulse. In the second scheme, by using a transient density ramp we achieve self-injection of electrons in a SM-LWFA with spatial localization. The transient density ramp is produced by a prepulse propagating transversely to drill a density depression channel via ionization and expansion. The same mechanism of injection with comparable efficiency is also demonstrated wi...

  12. Production of IgY by layers injected with Salmonella typhimurium

    Directory of Open Access Journals (Sweden)

    Hee, H. L.

    2017-06-01

    Full Text Available In the present study, production of IgY and performance of layers immunised with Salmonella typhimurium were evaluated. Thirty 23-wk old layers (Lohmann Brown with average body weight of 1.6 � 0.03 kg. were randomly and equally divided into two groups. Both groups were placed in a specific pathogen free room equipped with an exhaust fan. The layers were placed in single battery cages with slightly tilted floor which allowed eggs to roll straight into the collecting tray. Lyophilized, attenuated whole cells of S. typhimurium strain [serotype: Somatic (O, antigen 1, 4, (5, 12, flagella (H N12 phase I: 1; phase II: 1, 2 (Group B] that were emulsified with Freund�s complete adjuvant were used to immunise the layers intramuscularly 3 times at 2-wk interval (treatment group. Layers in the control group were injected with a solution of sterilized phosphate-buffered saline (PBS emulsified with an equal volume of Freund�s complete adjuvant. The experimental period lasted for 14 wks. Specific antibodies were detected by enzyme-linked immunosorbent assay. The results showed that the birds lost weight during the injection period, but the weights slowly increased in the following weeks. However, the weight of layers in the treated group remained lower (P<0.05 when compared to the period before injection. The loss in body weight of layers was the result of reduced feed intake, in particular during the injection weeks. Layers in the control group had a higher egg production, by about 10.1% than layers in the treatment group throughout the experimental period. The egg production for layers in treatment group showed a significant decrease (P<0.05 during the immunization period by 28.8%. The egg production significantly increased (P<0.05 to 71.9% after this period, but the production did not reach the level before immunisation. The weight of eggs of treated layers were significantly lower (P<0.05 than the control layers during the injection weeks. The egg

  13. Simultaneous HPAM/SDS Injection in Heterogeneous/Layered Models

    OpenAIRE

    M. H. Sedaghat; A. Zamani; S. Morshedi; R. Janamiri; M. Safdari; I. Mahdavi; A. Hosseini; A. Hatampour

    2013-01-01

    Although lots of experiments have been done in enhanced oil recovery, the number of experiments which consider the effects of local and global heterogeneity on efficiency of enhanced oil recovery based on the polymer-surfactant flooding is low and rarely done. In this research, we have done numerous experiments of water flooding and polymer-surfactant flooding on a five spot glass micromodel in different conditions such as different positions of layers. In these experiments, five different mi...

  14. Electron Injections Caused by a Dipolarization Flux Bundle

    Science.gov (United States)

    Kabin, K.; Kalugin, G. A.; Donovan, E.; Spanswick, E.

    2017-12-01

    We study electron injections caused by an earthward propagating electromagnetic pulse. The background magnetic field model is fully three-dimensional and includes the day-night asymmetry, however, the field lines are contained in the meridional planes. The transient pulse fields, which are prescribed analytically, are also three-dimensional. We study electron energization as a function of the initial radial position and the initial energy. We present results for equatorially-mirroring particles as well as for particles with several other values of the initial pitch angles. The pitch-angle dependence of the energization rates is relatively weak for the equatorial pitch angles greater than about 60o, but particles with smaller pitch angles gain significantly less energy than the equatorial ones. Energy gain factors of 3 to 10 are easily achievable in our model which is sufficient to produce observable features in ground based observations, such as those done by riometers.

  15. Improved plasma uniformity in a discharge system with electron injection.

    Science.gov (United States)

    Vizir, A V; Tyunkov, A V; Shandrikov, M V

    2009-02-01

    We present the results of experiments leading to improvement in bulk plasma uniformity of a constricted-arc discharge system with electron injection. The steady-state discharge was in argon, at a gas pressure of 0.5 mTorr, and operated with a main discharge voltage between 20 and 100 V and current between 3 and 15 A. The radial plasma distribution was measured with a movable Langmuir probe. We find that geometric modification of the intermediate electrode exit aperture and the main discharge cathode add little to the plasma uniformity. Improved bulk plasma uniformity is observed when a special distributing grid electrode is used and the main discharge voltage is less than 20-30 V. The application of a weakly divergent magnetic field in the region of the intermediate electrode exit aperture decreases the plasma nonuniformity from 20% to 14% over a radial distance of 30 cm. The plasma uniformity was further improved by compensating the magnetic self-field of the injected electron beam by a reverse magnetic field produced with a special electrode compensator. It is shown that an increase in discharge current causes a proportional increase in back current in the distributing electrode. The approach allows a decrease in plasma nonuniformity from 20% to 13% over a radial distance of 30 cm.

  16. Electron Injection to Control Self-Assembly and Disassembly of Phenylacetylene on Gold

    Science.gov (United States)

    Baddorf, Arthur P.; Li, Qing; Han, Chengbo; Bernholc, J.; Terrones, Humberto; Sumpter, Bobby; Fuentes-Cabrera, Miguel; Yi, Jieyu; Gai, Zheng; Maksymovych, Peter; Pan, Minghu

    2013-03-01

    The power of two-dimensional organic molecular systems for applications including electronics, functionalization and nanolithography is enabled by our ability to produce structures through self-assembly on a surface. Unfortunately, relying on thermal fluctuations to drive the surface attachment reactions has limited self-assembled molecules (SAMs) to little beyond alkanethiols on gold. We demonstrate a seminal example of non-thermal control over molecular self-assembly, where hot-electron injection rather than thermal fluctuations transform a disordered layer of weakly bonded hydrocarbon molecules into an ordered, dense monolayer. The process is reversible, in that injection of holes reverts to a disordered state. Since electron and hole injection is accomplished with a STM, unprecedented local control over ordered and disordered domains is achieved. STM imaging and correlated density functional calculations reveal that ordered domains consist of molecules vertically aligned and more strongly attached to the gold substrate through the acetylene tail, while disordered domains contain weakly bound molecules lying flat. Research was conducted at the CNMS, sponsored by the Division of Scientific User Facilities, U.S. Department of Energy.

  17. Wearable electronics formed on intermediate layer on textiles

    KAUST Repository

    Hussain, Muhammad Mustafa

    2017-07-27

    One manner of producing more desirable clothing with electronic capabilities is to manufacture electronics, such as the charging wires or devices themselves, directly onto the textile materials. Textile materials generally do not support the manufacturing of electronic devices, in part because the surface of the textile is too rough for electronic devices or the processes used to manufacturing electronic devices. An intermediate layer (204) may be placed on the textile material (202) to reduce the roughness of the surface of the textile material and provide other beneficial characteristics for the placement of electronic devices (206) directly on the textile material.

  18. Pellet injection into ohmically and additionally electron cyclotron resonance heated tokamak plasmas

    International Nuclear Information System (INIS)

    Drawin, H.W.; Geraud, A.

    1988-12-01

    Frozen H 2 and D 2 pellets injection into the electron cyclotron resonance heated plasmas of the Fontenay-aux-Roses tokamak are studied. Pellet injection with and without ECR heating are considered. In the first case, pellets penetration into the plasma is deeper than the neutral gas model predictions. In the second case, the position of the ECR layer had practically no influence on the penetration depth (reduced to a few centimeters). Only two-third of the pellet mass was found as ionized matter in the plasma, compared to the ohmic case. On the photographs the ablation clouds showed no particular structure when ECR heating was applied. Also the H β intensity was generally free of modulation. The enhanced ablation during ECRH can be simulated by a Parks and Turnbull formula. Perpendicular electron temperature of the hot electrons heated by the EC waves is by orders of magnitude larger than its parallel temperature. The resulting electron density profiles calculated by using the 1-D transport code MAKOKOT are in agreement with experiments, when suitable values of the anomalous radial convection velocity are chosen

  19. Structural complexities in the active layers of organic electronics.

    Science.gov (United States)

    Lee, Stephanie S; Loo, Yueh-Lin

    2010-01-01

    The field of organic electronics has progressed rapidly in recent years. However, understanding the direct structure-function relationships between the morphology in electrically active layers and the performance of devices composed of these materials has proven difficult. The morphology of active layers in organic electronics is inherently complex, with heterogeneities existing across multiple length scales, from subnanometer to micron and millimeter range. A major challenge still facing the organic electronics community is understanding how the morphology across all of the length scales in active layers collectively determines the device performance of organic electronics. In this review we highlight experiments that have contributed to the elucidation of structure-function relationships in organic electronics and also point to areas in which knowledge of such relationships is still lacking. Such knowledge will lead to the ability to select active materials on the basis of their inherent properties for the fabrication of devices with prespecified characteristics.

  20. Control of runaway electron energy using externally injected whistler waves

    Science.gov (United States)

    Guo, Zehua; McDevitt, Christopher J.; Tang, Xian-Zhu

    2018-03-01

    One way of mitigating runaway damage of the plasma-facing components in a tokamak fusion reactor is by limiting the runaway electron energy under a few MeV, while not necessarily reducing the runaway current appreciably. Here, we describe a physics mechanism by which such momentum space engineering of the runaway distribution can be facilitated by externally injected high-frequency electromagnetic waves such as whistler waves. The drastic impact that wave-induced scattering can have on the runaway energy distribution is fundamentally the result of its ability to control the runaway vortex in the momentum space. The runaway vortex, which is a local circulation of runaways in momentum space, is the outcome of the competition between Coulomb collisions, synchrotron radiation damping, and runaway acceleration by the parallel electric field. By introducing a wave that resonantly interacts with runaways in a particular range of energies which is mildly relativistic, the enhanced scattering would reshape the vortex by cutting off the part that is highly relativistic. The efficiency of resonant scattering accentuates the requirement that the wave amplitude can be small so the power requirement from external wave injection is practical for the mitigation scheme.

  1. Experiments with electron beam injection in ionosphere plasma and rare gas

    International Nuclear Information System (INIS)

    Bykovskij, V.F.; Meshkov, I.N.; Seleznev, I.A.; Syresin, E.M.

    2003-01-01

    The active experiment 'Electron' is intended for the electron beam injection from a meteorological rocket in the ionosphere plasma. The beam is injected in the ionosphere plasma at a current of 0.5 A and an energy of 6.5 - 8 keV. The energy spectra are given for the plasma electrons and ions. The radio-wave spectrum is measured in a RF frequency range of 100-500 MHz. The radio wave traversing through the electron beam injection region is discussed. The laboratory experiments are performed with the electron beam injection in a rare gas to model the active outer-space experiments

  2. Data Retention Characterization of Gate-Injected Gold-Nanoparticle Non-Volatile Memory with Low-Damage CF4-Plasma-Treated Blocking Oxide Layer

    Directory of Open Access Journals (Sweden)

    Yu-Hua Liu

    2017-11-01

    Full Text Available Gold-nanoparticle (Au-NP non-volatile memories (NVMs with low-damage CF4 plasma treatment on the blocking oxide (BO layer have been investigated to present the gate injection of the holes. These holes, injected from the Al gate with the positive gate bias, were explained by the bandgap engineering of the gradually-fluorinated BO layer and the effective work function modulation of the Al gate. The Si–F complex in the BO layer was analyzed by X-ray photoelectron spectroscopy (XPS, while the depth of fluorine incorporation was verified using a secondary ion mass spectrometer (SIMS. In addition, the valence band modification of the fluorinated BO layer was examined by ultraviolet photoelectron spectroscopy (UPS to support the bandgap engineering. The reactive power of the CF4 plasma treatment on the BO layer was modified to increase the electric field of the BO layer and raise the effective work function of the Al gate, leading to the hole-injection from the gate. The injected holes are trapped at the interface between the gold-nanoparticles (Au-NPs and the tunneling oxide (TO layer, resulting in superior data retention properties such as an extremely low charge loss of 5.7% at 104 s and a nearly negligible increase in charge loss at 85 °C of the CF4-plasma-treated Au-NP NVMs, which can be applied in highly reliable consumer electronics.

  3. Data Retention Characterization of Gate-Injected Gold-Nanoparticle Non-Volatile Memory with Low-Damage CF₄-Plasma-Treated Blocking Oxide Layer.

    Science.gov (United States)

    Liu, Yu-Hua; Kao, Chyuan-Haur; Cheng, Tsung-Chin; Wu, Chih-I; Wang, Jer-Chyi

    2017-11-10

    Gold-nanoparticle (Au-NP) non-volatile memories (NVMs) with low-damage CF₄ plasma treatment on the blocking oxide (BO) layer have been investigated to present the gate injection of the holes. These holes, injected from the Al gate with the positive gate bias, were explained by the bandgap engineering of the gradually-fluorinated BO layer and the effective work function modulation of the Al gate. The Si-F complex in the BO layer was analyzed by X-ray photoelectron spectroscopy (XPS), while the depth of fluorine incorporation was verified using a secondary ion mass spectrometer (SIMS). In addition, the valence band modification of the fluorinated BO layer was examined by ultraviolet photoelectron spectroscopy (UPS) to support the bandgap engineering. The reactive power of the CF₄ plasma treatment on the BO layer was modified to increase the electric field of the BO layer and raise the effective work function of the Al gate, leading to the hole-injection from the gate. The injected holes are trapped at the interface between the gold-nanoparticles (Au-NPs) and the tunneling oxide (TO) layer, resulting in superior data retention properties such as an extremely low charge loss of 5.7% at 10⁴ s and a nearly negligible increase in charge loss at 85 °C of the CF₄-plasma-treated Au-NP NVMs, which can be applied in highly reliable consumer electronics.

  4. Calculation of the mobility of electrons injected in liquid argon

    International Nuclear Information System (INIS)

    Ascarelli, G.

    1986-01-01

    A model calculation is carried out in which we evaluate the mobility of electrons injected in liquid argon. Scattering by both phonons and static density fluctuations is taken into account. The calculation for the mobility limited by phonon scattering differs from the usual calculation in crystals by considering both the local changes in the deformation potential and the changes of the amplitude of the phonons that are caused by the existence of density fluctuations. The calculation of the mobility limited by scattering from density fluctuations is carried out with the assumption that they give rise to a square-well (or barrier) potential that will scatter the electrons. The above perturbation ΔV 0 is related to a density fluctuation Δn by ΔV 0 = V 0 (n-bar+Δn)-V 0 (n-bar). The scattering volumes Ω, where the density fluctuation Δn is located, are weighted by exp(-r/xi) where xi is the correlation length and r is the radius of Ω. The magnitude of the different density fluctuations is weighted by exp[-(Δn) 2 Ω/2nS(0)], where S(0) = nk/sub B/TK/sub T/, K/sub T/ is the isothermal compressibility. The calculation of the mean free path is carried out using partial waves. Both scattering mechanisms, scattering by phonons and static density fluctuations, give comparable contributions to the mobility

  5. The effect of adsorption isothermy on the effectiveness of polymer injection of stratified nonhomogeneous layers

    Energy Technology Data Exchange (ETDEWEB)

    Kudryavtsev, G.V.; Lisina, L.A.; Mazer, A.O.

    1981-01-01

    Based on a two-phase mathematical layer model of unconnected intercalated beds, the effectiveness of polymer injection under different adsorption laws is examined. An analysis of the effect of isothermy on the distribution of satiation, concentration, the retention coefficient and output is made.

  6. Dynamics of Singlet Fission and Electron Injection in Self-Assembled Acene Monolayers on Titanium Dioxide

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Justin C [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Pace, Natalie A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Arias, Dylan H [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Christensen, Steven T [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Granger, Devin B. [University of Kentucky; Anthony, John E. [University of Kentucky

    2018-02-26

    We employ a combination of linear spectroscopy, electrochemistry, and transient absorption spectroscopy to characterize the interplay between electron transfer and singlet fission dynamics in polyacene-based dyes attached to nanostructured TiO2. For triisopropyl silylethynyl (TIPS)-pentacene, we find that the singlet fission time constant increases to 6.5 ps on a nanostructured TiO2 surface relative to a thin film time constant of 150 fs, and that triplets do not dissociate after they are formed. In contrast, TIPS-tetracene singlets quickly dissociate in 2 ps at the molecule/TiO2 interface, and this dissociation outcompetes the relatively slow singlet fission process. The addition of an alumina layer slows down electron injection, allowing the formation of triplets from singlet fission in 40 ps. However, the triplets do not inject electrons, which is likely due to a lack of sufficient driving force for triplet dissociation. These results point to the critical balance required between efficient singlet fission and appropriate energetics for interfacial charge transfer.

  7. Electronic localization in rotated graphene multi-layer

    Science.gov (United States)

    Trambly de Laissardiere, Guy; Faizy Namarvar, Omid; Mayou, Didier; Magaud, Laurence

    2012-02-01

    Rotated graphene bilayers show an interesting electronic structure with a tendency to layer decoupling at large rotation angles and a stronger electronic mixing at small angles, associated with a strong decrease of the velocity ([1] and Refs. therein). These inter-layer mixed states allow us [2] to address the long lasting problem of the origin of the Moir'e pattern observed on STM images. For large and intermediate rotation angles, we present analytical and numerical studies of the local density of states in the Moir'e that compare well to STM spectra. For very small angles, the inter-layer mixed states ultimately lead to electronic confinement in AA stacking regions in an energy range close to the Dirac point. In graphene multi-layer (up to 10 layers) containing twisted intercalated layers [3], we found both bands with a strong velocity reduction, and bands without velocity reduction. This could explain [2] why velocity renormalization is not observed experimentally in rotated multi-layers on SiC [3,4]. [4pt] [1] G. Trambly de Laissardière et al., Nano Lett. 10, 804 (2010). [0pt] [2] G. Trambly de Laissardière et al., in preparation. [0pt] [3] M. Sprinkle et al., J. Phys. D: Appl. Phys. 43, 374006 (2010). [0pt] [4] M. Sprinkle et al., Phys. Rev. Lett. 103, 226803 (2009).

  8. Improved performance of quantum dot light emitting diode by modulating electron injection with yttrium-doped ZnO nanoparticles

    Science.gov (United States)

    Li, Jingling; Guo, Qiling; Jin, Hu; Wang, Kelai; Xu, Dehua; Xu, Yongjun; Xu, Gang; Xu, Xueqing

    2017-10-01

    In a typical light emitting diode (QD-LED), with ZnO nanoparticles (NPs) serving as the electron transport layer (ETL) material, excessive electron injection driven by the matching conduction band maximum (CBM) between the QD and this oxide layer usually causes charge imbalance and degrades the device performance. To address this issue, the electronic structure of ZnO NPs is modified by the yttrium (Y) doping method. We demonstrate that the CBM of ZnO NPs has a strong dependence on the Y-doping concentration, which can be tuned from 3.55 to 2.77 eV as the Y doping content increases from 0% to 9.6%. This CBM variation generates an enlarged barrier between the cathode and this ZnO ETL benefits from the modulation of electron injection. By optimizing electron injection with the use of a low Y-doped (2%) ZnO to achieve charge balance in the QD-LED, device performance is significantly improved with maximum luminance, peak current efficiency, and maximal external quantum efficiency increase from 4918 cd/m2, 11.3 cd/A, and 4.5% to 11,171 cd/m2, 18.3 cd/A, and 7.3%, respectively. This facile strategy based on the ETL modification enriches the methodology of promoting QD-LED performance.

  9. Highly efficient solution-processed phosphorescent organic light-emitting devices with double-stacked hole injection layers

    Science.gov (United States)

    Chen, Yuehua; Hao, Lin; Zhang, Xinwen; Zhang, Xiaolin; Liu, Mengjiao; Zhang, Mengke; Wang, Jiong; Lai, Wen-Yong; Huang, Wei

    2017-08-01

    In this paper, solution-processed nickel oxide (NiOx) is used as hole-injection layers (HILs) in solution-processed phosphorescent organic light-emitting diodes (PhOLEDs). Serious exciton quenching is verified at the NiOx/emitting layer (EML) interface, resulting in worse device performance. The device performance is significantly improved by inserting a layer of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (PEDOT:PSS) between the EML and NiOx. The solution-processed blue PhOLED with the double-stacked NiOx/PEDOT:PSS HILs shows a maximum current efficiency of 30.5 cd/A, which is 75% and 30% higher than those of the devices with a single NiOx HIL and a PEDOT:PSS HIL, respectively. Improvement of device efficiency can be attributed to reducing exciton quenching of the PEDOT:PSS layer as well as the electron blocking effect of the NiOx layer.

  10. The thin layer technique and its application to electron microscopy

    International Nuclear Information System (INIS)

    Ranc, G.

    1957-10-01

    This work deals with the technique of thin layers obtained by evaporation under vacuum, in the thickness range extending from a few monoatomic layers to several hundred angstroms. The great theoretical and practical interest of these layers has, it is well known, given rise to many investigations from Faraday onwards. Within the necessarily restricted limits of this study, we shall approach the problem more particularly from the point of view of: - their production; - their use in electron microscopy. A critical appraisal is made, in the light of present-day knowledge, based on our personal experience and on an extensive bibliography which we have collected on the subject. (author) [fr

  11. Wear resistance of WCp/Duplex Stainless Steel metal matrix composite layers prepared by laser melt injection

    NARCIS (Netherlands)

    Do Nascimento, A. M.; Ocelik, V.; Ierardi, M. C. F.; De Hosson, J. Th. M.

    2008-01-01

    Laser Melt Injection (LMI) was used to prepare metal matrix composite layers with a thickness of about 0.7 mm and approximately 10% volume fraction of WC particles in three kinds of Cast Duplex Stainless Steels (CDSSs). WC particles were injected into the molten surface layer using Nd:YAG high power

  12. Dual Solutions on Thermosolutal Marangoni Forced Convection Boundary Layer with Suction and Injection

    Directory of Open Access Journals (Sweden)

    R. A. Hamid

    2011-01-01

    Full Text Available This paper considers the extended problem of the thermosolutal Marangoni forced convection boundary layer by Pop et al. (2001 when the wall is permeable, namely, there is a suction or injection effect. The governing system of partial differential equations is transformed into a system of ordinary differential equations, and the transformed equations are solved numerically using the shooting method. The effects of suction or injection parameter f0 on the velocity, temperature, and concentration profiles are illustrated and presented in tables and figures. It is shown that dual solutions exist for the similarity parameter β less than 0.5.

  13. The injection of ten electron/3He-rich SEP events

    Science.gov (United States)

    Wang, Linghua; Krucker, Säm; Mason, Glenn; Li, Gang

    2017-04-01

    We have derived the particle injections at the Sun for ten good electron/3He-rich solar energetic particle (SEP) events, using a 1.2 AU particle path length (suggested by analysis of the velocity dispersion). The inferred solar injections of high-energy (˜10 to 300 keV) electrons and of ˜MeV/nucleon ions (carbon and heavier) start with a delay of 17±3 minutes and 75±14 minutes, respectively, after the injection of low-energy (˜0.4 to 9 keV) electrons. The injection duration (averaged over energy) ranges from ˜200 to 550 minutes for ions, from ˜90 to 160 minutes for low-energy electrons, and from ˜10 to 30 minutes for high-energy electrons. Most of the selected events have no reported Hα flares or GOES SXR bursts, but all have type III radio bursts that typically start after the onset of a low-energy electron injection. All nine events with SOHO/LASCO coverage have a relatively fast (>570km/s), mostly narrow (≲30°), west-limb coronal mass ejection (CME) that launches near the start of the low-energy electron injection, and reaches an average altitude of ˜1.0 and 4.7 RS, respectively, at the start of the high-energy electron injection and of the ion injection. The electron energy spectra show a continuous power law extending across the transition from low to high energies, suggesting that the low-energy electron injection may provide seed electrons for the delayed high-energy electron acceleration. The delayed ion injections and high ionization states may suggest an ion acceleration along the lower altitude flanks, rather than at the nose of the CMEs.

  14. Tunneling Injection and Exciton Diffusion of White Organic Light-Emitting Diodes with Composed Buffer Layers

    Science.gov (United States)

    Yang, Su-Hua; Wu, Jian-Ping; Huang, Tao-Liang; Chung, Bin-Fong

    2018-02-01

    Four configurations of buffer layers were inserted into the structure of a white organic light emitting diode, and their impacts on the hole tunneling-injection and exciton diffusion processes were investigated. The insertion of a single buffer layer of 4,4'-bis(carbazol-9-yl)biphenyl (CBP) resulted in a balanced carrier concentration and excellent color stability with insignificant chromaticity coordinate variations of Δ x diffusion of excitons were confirmed by the preparation of a dual buffer layer of CBP:tris-(phenylpyridine)-iridine (Ir(ppy)3)/BCP. A maximum current efficiency of 12.61 cd/A with a luminance of 13,850 cd/m2 was obtained at 8 V when a device with a dual-buffer layer of CBP:6 wt.% Ir(ppy)3/BCP was prepared.

  15. Electrically conductive polyaniline as hole-injection layer for MEH-PPV:BT based polymer light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Mohsennia, M., E-mail: m.mohsennia@kashanu.ac [Department of Chemistry, University of Kashan, Kashan (Iran, Islamic Republic of); Institute of Nanoscience and Nanotechnology, University of Kashan, Kashan (Iran, Islamic Republic of); Bidgoli, M. Massah [Department of Chemistry, University of Kashan, Kashan (Iran, Islamic Republic of); Boroumand, F. Akbari [Department of Electrical and Computer Engineering, K.N. Toosi University of Technology, Tehran (Iran, Islamic Republic of); Nia, A. Mohsen [Department of Materials Science and Engineering, Johns Hopkins University (United States)

    2015-07-15

    Graphical abstract: The PANI prepared at 15 °C with higher electrical conductivity has been used as hole-injection layer (HIL) in polymer light emitting diodes (PLEDs) with structure of ITO/PANI/MEHPPV:BT/Al. - Highlights: • Polyaniline (PANI) was synthesized at different temperatures (5, 10, 15, 20 and 25 °C). • The PANI sample with higher electrical conductivity was used as HIL in the PLED devices. • The PANI injection layer yielded higher current and lower turn-on voltage. • The effect of MEH-PPV:BT weight ratio on the PLED performance has been also investigated. • The J–V characteristics of the devices have been explained by FN tunneling model. - Abstract: Polyaniline (PANI) was synthesized by oxidative polymerization of aniline at different temperatures (5, 10, 15, 20 and 25 °C). The influence of polymerization temperature on sheet resistance of PANI was investigated, and the one prepared at 15 °C which showed lowest resistivity was chosen for further analysis. PANI was subsequently used as hole-injection layer (HIL) in polymer light emitting diodes (PLEDs) with structure of poly(ethylene terephthalate) (PET)/indium tin oxide (ITO)/PANI/MEH-PPV:BT/aluminum (Al). The PLEDs with emission layer made from a blend of poly [2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) and an electron transporting material, benzothiadiazole (BT), were fabricated at room conditions without using glove boxes. Our results showed an improvement in performance of our PANI-based fabricated PLEDs (PET/ITO/PANI/MEH-PPV:BT/Al) compared to the conventional devices that use poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PET/ITO/PEDOT:PSS/MEH-PPV:BT/Al) as their HIL. The hole injection barrier height (φ) of the fabricated PLEDs were then estimated using the Fowler–Nordheim (FN) field-emission tunneling theory and revealed that the barrier height decreases by increasing the BT concentration in the MEH-PPV:BT blend layer.

  16. Electrically conductive polyaniline as hole-injection layer for MEH-PPV:BT based polymer light emitting diodes

    International Nuclear Information System (INIS)

    Mohsennia, M.; Bidgoli, M. Massah; Boroumand, F. Akbari; Nia, A. Mohsen

    2015-01-01

    Graphical abstract: The PANI prepared at 15 °C with higher electrical conductivity has been used as hole-injection layer (HIL) in polymer light emitting diodes (PLEDs) with structure of ITO/PANI/MEHPPV:BT/Al. - Highlights: • Polyaniline (PANI) was synthesized at different temperatures (5, 10, 15, 20 and 25 °C). • The PANI sample with higher electrical conductivity was used as HIL in the PLED devices. • The PANI injection layer yielded higher current and lower turn-on voltage. • The effect of MEH-PPV:BT weight ratio on the PLED performance has been also investigated. • The J–V characteristics of the devices have been explained by FN tunneling model. - Abstract: Polyaniline (PANI) was synthesized by oxidative polymerization of aniline at different temperatures (5, 10, 15, 20 and 25 °C). The influence of polymerization temperature on sheet resistance of PANI was investigated, and the one prepared at 15 °C which showed lowest resistivity was chosen for further analysis. PANI was subsequently used as hole-injection layer (HIL) in polymer light emitting diodes (PLEDs) with structure of poly(ethylene terephthalate) (PET)/indium tin oxide (ITO)/PANI/MEH-PPV:BT/aluminum (Al). The PLEDs with emission layer made from a blend of poly [2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) and an electron transporting material, benzothiadiazole (BT), were fabricated at room conditions without using glove boxes. Our results showed an improvement in performance of our PANI-based fabricated PLEDs (PET/ITO/PANI/MEH-PPV:BT/Al) compared to the conventional devices that use poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PET/ITO/PEDOT:PSS/MEH-PPV:BT/Al) as their HIL. The hole injection barrier height (φ) of the fabricated PLEDs were then estimated using the Fowler–Nordheim (FN) field-emission tunneling theory and revealed that the barrier height decreases by increasing the BT concentration in the MEH-PPV:BT blend layer

  17. Electron injection studies of radiation induced positive charge in MOS devices

    International Nuclear Information System (INIS)

    Aitken, J.M.; DiMaria, D.J.; Young, D.R.

    1976-01-01

    Avalanche injection and internal photo-emission techniques have been used to study the capture of electrons by positive charges introduced into the oxide layers of MOS capacitors. These two techniques have been used to study the positive charge in Al gate and poly-Si gate capacitors. The electron capture cross-section of this charge has been found to depend on the composition of the inerface; positive charge at the Si interface tends to have a coulombic electron capture cross-section (approximately 4 x 10 -13 cm 2 ), while that at the aluminum interface has a non-coulombic electron capture cross-section (less than or equal to 10 -14 cm 2 ). The location of the positive charge induced by radiation under positive or negative bias has been determined in a completely non-destructive manner by photocurrent-voltage experiments. It has been found that under a positive irradiation bias, positive space charge accumulates within approximately 50 A of the Si-SiO 2 interface, while under a negative bias, the space charge is within approximately 50 A of the Al-SiO 2 interface. In both cases there is evidence for some charge at the other interface introduced by the irradiation

  18. Electronic spectra of anions intercalated in layered double hydroxides

    Indian Academy of Sciences (India)

    Transition metal complexes intercalated in layered double hydroxides have a different electronic structure as compared to their free state owing to their confinement within the interlayer gallery. UV–Vis absorptions of the intercalated complex anions show a significant shift as compared to their free state. The ligand to metal ...

  19. Inter-layer Cooper pairing of two-dimensional electrons

    International Nuclear Information System (INIS)

    Inoue, Masahiro; Takemori, Tadashi; Yoshizaki, Ryozo; Sakudo, Tunetaro; Ohtaka, Kazuo

    1987-01-01

    The authors point out the possibility that the high transition temperatures of the recently discovered oxide superconductors are dominantly caused by the inter-layer Cooper pairing of two-dimensional electrons that are coupled through the exchange of three-dimensional phonons. (author)

  20. Viscous-shock-layer solutions with coupled radiation and ablation injection for earth entry

    Science.gov (United States)

    Gupta, Roop N.; Lee, Kam-Pui; Moos, James N.; Sutton, Kenneth

    1990-01-01

    Results are obtained for the forebody of a planetary exploration vehicle entering the earth's atmosphere. A viscous-shock-layer analysis is used assuming the flow to be laminar and in chemical equilibrium. Presented results include coupled radiation and ablation injection. This study further includes the effect of different transport and thermodynamic properties and radiation models. A Lewis number of 1.4 appears adequate for the radiation-dominated flows. Five velocities corresponding to different possible trajectory points at an altitude of 70 km have been further analyzed in detail. Sublimation and radiative equilibrium wall temperatures are employed for cases with and without coupled injection, respectively. For the cases analyzed here, the mass injection rates are small. However, the rates could become large if a lower altitude is used for aerobraking and/or the body size is increased. A comparison of the equilibrium results with finite-rate chemistry calculation shows the flowfield to be in chemical equilibrium.

  1. The concept of "compartment allergy": prilocaine injected into different skin layers

    Directory of Open Access Journals (Sweden)

    Wobser Marion

    2011-04-01

    Full Text Available Abstract We herein present a patient with delayed-type allergic hypersensitivity against prilocaine leading to spreading eczematous dermatitis after subcutaneous injections for local anesthesia with prilocaine. Prilocaine allergy was proven by positive skin testing and subcutaneous provocation, whereas the evaluation of other local anesthetics - among them lidocaine, articaine and mepivacaine - did not exhibit any evidence for cross-reactivity. Interestingly, our patient repeatedly tolerated strictly deep subcutaneous injection of prilocaine in provocation testing while patch and superficial subcutaneous application mounted strong allergic responses. We hypothesize, that lower DC density in deeper cutaneous compartments and/or different DC subsets exhibiting distinct functional immunomodulatory properties in the various layers of the skin may confer to the observed absence of clinical reactivity against prilocaine after deep subcutaneous injection. The term compartment allergy indicates that the route of allergen administration together with the targeted immunologic environment orchestrates on the immunologic outcome: overt T-cell mediated allergy or clinical tolerance.

  2. Generation of interface states by injection of electrons into SiO2

    Science.gov (United States)

    Lyon, S. A.

    1984-11-01

    Several techniques have been used to inject electrons into SiO2 with various energies. Interface states are found to be generated whenever electrons flow through the oxide. However, the efficiency of interface state generation depends upon the method of electron injection. At high enough fields, positive charge is produced in the oxide which enhances the production of interface states. All of the states are amphoteric and are probably dangling Si bonds at the interface (Pb-centers).

  3. Spin injection into a two-dimensional electron gas using inter-digital-ferromagnetic contacts

    DEFF Research Database (Denmark)

    Hu, C.M.; Nitta, J.; Jensen, Ane

    2002-01-01

    We present a model that describes the spin injection across a single interface with two electrodes. The spin-injection rate across a typical hybrid junction made of ferromagnet (FM) and a two-dimensional electron gas (2DEG) is found at the percentage level. We perforin spin-injection-detection ex......-injection-detection experiment on devices with two ferromagnetic contacts on a 2DEG confined in an InAs quantum well. A spin-injection rate of 4.5% is estimated from the measured magnetoresistance....

  4. Photo-Electron Injection into TiO2: Quantum Dot vs. Graphene

    Science.gov (United States)

    Long, Run

    2013-03-01

    We presented a detailed comparison on the similalaries and differences of the ultrafast photoinduced electron transfer (ET) from two kinds of donor species, namely PbSe quantum dot (QD) and graphene, into the acceptor TiO2 surface via ab initio time domain density functional theory simulations. The main diffrences stem from the size and dimensionality of the donor species and donor-acceptor bonding characteristics. For exmaple, the QD is localized species and composed by heavy atoms that connected to TiO2 surface via chemical bonds. In contrast, the graphene layer is delocalized two-dimensional object that attached to TiO2 substrate by van der Waals interaction and partial chemical bonds. The ET mechanism depends on the dimensionality of the donor and donor-acceptor chemical bonding. The injection from the localized donor states of the QD is dominatly adiabatic. In contrast, the injection from the two-dimensional graphene into TiO2 exhibits prominently nonadiabatic (NA) component. The NA mechanism is efficient for the graphene/TiO2 composites because it is delocalized over two dimensions and is able to couple with a dense manifold of delocalized TiO2 conduction band states and weak coupling as well. The high density of acceptor states in this case favors the NA mechanism. This work is supported by Science Foundation Ireland SIRG program (Grant Number 11/SIRG/E2172).

  5. Blocking layer modeling for temperature analysis of electron transfer ...

    African Journals Online (AJOL)

    In this article, we simulate thermal effects on the electron transfer rate from three quantum dots CdSe, CdS and CdTe to three metal oxides TiO2, SnO2 and ZnO2 in the presence of four blocking layers ZnS, ZnO, TiO2 and Al2O3, in a porous quantum dot sensitized solar cell (QDSSC) structure, using Marcus theory.

  6. Electron beam dosimetry for a thin-layer absorber irradiated by 300-keV electrons

    International Nuclear Information System (INIS)

    Kijima, Toshiyuki; Nakase, Yoshiaki

    1993-01-01

    Depth-dose distributions in thin-layer absorbers were measured for 300-keV electrons from a scanning-type irradiation system, the electrons having penetrated through a Ti-window and an air gap. Irradiations of stacks of cellulose triacetate(CTA) film were carried out using either a conveyor (i.e. dynamic irradiation) or fixed (i.e. static) irradiation. The sample was irradiated using various angles of incidence of electrons, in order to examine the effect of obliqueness of electron incidence at low-energy representative of routine radiation curing of thin polymeric or resin layers. Dynamic irradiation gives broader and shallower depth-dose distributions than static irradiation. Greater obliqueness of incident electrons gives results that can be explained in terms of broader and shallower depth-dose distributions. The back-scattering of incident electrons by a metal(Sn) backing material enhances the absorbed dose in a polymeric layer and changes the overall distribution. It is suggested that any theoretical estimations of the absorbed dose in thin layers irradiated in electron beam curing must be accomplished and supported by experimental data such as that provided by this investigation. (Author)

  7. Drag reduction mechanism by microbubble injection within a channel boundary layer

    International Nuclear Information System (INIS)

    Ling Zhen; Hassan, Y.

    2005-01-01

    In this study, the drag reduction due to microbubble injection in the boundary layer of a fully developed turbulent channel flow was investigated. Particle Image Velocimetry (PIV) techniques were taken. The effects of the presence of microbubbles in the boundary layer were assessed. A drag reduction of 38.4% was obtained with void fraction of 4.9%. The algorithms of wavelet auto-correlation maps were applied to the PIV velocity field measurement. Modifications in the wavelet auto-correlation maps due to the presence of microbubbles were studied and compared in three-dimensions. By using 3-D plotting routines and the wavelet auto-correlation maps, it can be deduced from this study that the microbubble injection within the boundary layer increases the turbulent energy of the streamwise velocity components of the large scale (large eddy size, low frequency) range and decreases the energy of the small scale (small eddy size, high frequency) range. The wavelet auto-correlation maps of the normal velocities indicate that the microbubble presence decrease the turbulent energy of normal velocity components for both the large scale (large eddy size, low frequency) and the small scale (small eddy size, high frequency) ranges. (authors)

  8. Quantum electron-acoustic double layers in two electron species quantum plasma

    Science.gov (United States)

    Sah, Om Prakash

    2009-01-01

    The existence and the characteristic properties of electron-acoustic double layers are investigated in three component unmagnetized dense quantum plasmas consisting of stationary background ions and two electron populations: one "cold" and the other "hot." Using the one-dimensional quantum hydrodynamic model and the reductive perturbation technique, a generalized form of nonlinear quantum Korteweg-de Vries equation governing the dynamics of weak electron acoustic double layers is derived. A stationary solution of this equation is obtained to discuss the existence criteria of different types of double layers and their characteristic properties. It is shown that two types of compressive double layers: one in the lower δ-parameter region and the other at the higher δ-parameter region, along with rarefactive double layers in the intermediate region, may exist, where δ =nec0/neh0 is the ratio of unperturbed cold to hot electron densities. The width, the amplitude, and the velocity of these double layers are significantly affected by the δ-parameter. The relevance of the present investigation is also discussed.

  9. Electron Scattering at Surfaces of Epitaxial Metal Layers

    Science.gov (United States)

    Chawla, Jasmeet Singh

    In the field of electron transport in metal films and wires, the 'size effect' refers to the increase in the resistivity of the films and wires as their critical dimensions (thickness of film, width and height of wires) approach or become less than the electron mean free path lambda, which is, for example, 39 nm for bulk copper at room temperature. This size-effect is currently of great concern to the semiconductor industry because the continued downscaling of feature sizes has already lead to Cu interconnect wires in this size effect regime, with a reported 2.5 times higher resistivity for 40 nm wide Cu wires than for bulk Cu. Silver is a possible alternate material for interconnect wires and titanium nitride is proposed as a gate metal in novel field-effect-transistors. Therefore, it is important to develop an understanding of how the growth, the surface morphology, and the microstructure of ultrathin (few nanometers) Cu, Ag and TiN layers affect their electrical properties. This dissertation aims to advance the scientific knowledge of electron scattering at surfaces (external surfaces and grain boundaries), that are, the primary reasons for the size-effect in metal conductors. The effect of surface and grain boundary scattering on the resistivity of Cu thin films and nanowires is separately quantified using (i) in situ transport measurements on single-crystal, atomically smooth Cu(001) layers, (ii) textured polycrystalline Cu(111) layers and patterned wires with independently varying grain size, thickness and line width, and (iii) in situ grown interfaces including Cu-Ta, Cu-MgO, Cu-vacuum and Cu-oxygen. In addition, the electron surface scattering is also measured in situ for single-crystal Ag(001), (111) twinned epitaxial Ag(001), and single-crystal TiN(001) layers. Cu(001), Ag(001), and TiN(001) layers with a minimum continuous thickness of 4, 3.5 and 1.8 nm, respectively, are grown by ultra-high vacuum magnetron sputter deposition on MgO(001) substrates with

  10. Electron spin resonance study of interface states induced by electron injection in metal-oxide-semiconductor devices

    Science.gov (United States)

    Mikawa, R. E.; Lenahan, P. M.

    1986-03-01

    We find that electrons emitted from silicon into the oxide of metal-oxide-silicon devices generate amphoteric trivalent silicon (Pb center) defects at the Si/SiO2 interface. The Pb centers are generated in numbers approximately equal to that of the electron injection induced interface states. The effects of electron injection are similar to those of ionizing radiation to the extent that in both cases Pb centers are generated at the Si/SiO2 interface. However, the effects are not identical; ionizing radiation creates another trivalent silicon defect, termed E', in the oxide. We are unable to observe any E' generation in oxides subjected to electron injection. There appears to be a strong correlation between the number of trapped electrons and the electron injection induced Pb center interface states; this observation suggests that the trapping of electrons in the bulk of the oxides is in some way related to the creation of the Pb center interface state defects. We find that dry oxides subjected to a deuterium/nitrogen anneal exhibit less electron trapping than otherwise identical oxides which have been subjected to a hydrogen/nitrogen anneal. This observation is consistent with the idea that a hydrogen bond breaking event may be involved in electron capture.

  11. ELECTRON CLOUD AT COLLIMATOR AND INJECTION REGION OF THE SPALLATION NEUTRON SOURCE ACCUMULATOR RING

    International Nuclear Information System (INIS)

    WANG, L.; HSEUH, H.-C.; LEE, Y.Y.; RAPARIA, D.; WEI, J.; COUSINEAU, S.

    2005-01-01

    The beam loss along the Spallation Neutron Source's accumulator ring is mainly located at the collimator region and injection region. This paper studied the electron cloud build-up at these two regions with the three-dimension program CLOUDLAND

  12. Injection-limited electron current in a methanofullerene

    NARCIS (Netherlands)

    Duren, J.K.J. van; Mihailetchi, V.D.; Blom, P.W.M.; Woudenbergh, T. van; Hummelen, J.C.; Rispens, M.T.; Janssen, R.A.J.; Wienk, M.M.

    2003-01-01

    The dark current of bulk-heterojunction photodiodes consisting of a blend of a methanofullerene (PCBM) as n-type electron acceptor and a dialkoxy-(p-phenylene vinylene) (OC1C10-PPV) as a p-type electron donor sandwiched between electrodes with different work functions has been investigated. With

  13. Heavy Ion Injection Into Synchrotrons, Based On Electron String Ion Sources

    CERN Document Server

    Donets, E E; Syresin, E M

    2004-01-01

    A possibility of heavy ions injection into synchrotrons is discussed on the base of two novel ion sources, which are under development JINR during last decade: 1) the electron string ion source (ESIS), which is a modified version of a conventional electron beam ion source (EBIS), working in a reflex mode of operation, and 2) the tubular electron string ion source (TESIS). The Electron String Ion Source "Krion-2" (VBLHE, JINR, Dubna) with an applied confining magnetic field of 3 T was used for injection into the superconducting JINR synchrotron - Nuclotron and during this runs the source provided a high pulse intensity of the highly charged ion beams: Ar16+

  14. Tuning of electronic properties of fullerene-oligothiophene layers

    Energy Technology Data Exchange (ETDEWEB)

    Lewandowska, Kornelia [Institute of Molecular Physics, Polish Academy of Sciences, ul. Smoluchowskiego 17, 60-179 Poznań (Poland); Pilarczyk, Kacper, E-mail: kacper.pilarczyk@fis.agh.edu.pl, E-mail: szacilow@agh.edu.pl [Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, al. A. Mickiewicza 30, 30-059 Kraków (Poland); Academic Centre for Materials and Nanotechnology, AGH University of Science and Technology, al. A. Mickiewicza 30, 30-059 Kraków (Poland); Podborska, Agnieszka [Faculty of Non-Ferrous Metals, AGH University of Science and Technology, al. A. Mickiewicza 30, 30-059 Kraków (Poland); Kim, Tae-Dong; Lee, Kwang-Sup [Department of Advanced Materials, Hannam University, 305-811 Daejeon (Korea, Republic of); Szaciłowski, Konrad, E-mail: kacper.pilarczyk@fis.agh.edu.pl, E-mail: szacilow@agh.edu.pl [Academic Centre for Materials and Nanotechnology, AGH University of Science and Technology, al. A. Mickiewicza 30, 30-059 Kraków (Poland); Faculty of Non-Ferrous Metals, AGH University of Science and Technology, al. A. Mickiewicza 30, 30-059 Kraków (Poland)

    2015-01-26

    Electronic properties of fullerene derivatives containing oligothiophene pendant chain (1–3 thiophene moieties) were investigated using the Kelvin probe technique and quantum chemistry methods. For electrochemical examination of these systems, Langmuir–Blodgett (LB) layers were prepared by the deposition on a gold substrate. The analysis of the experimental data shows that the value of the work function depends strongly on the length of oligothiophene chain. Similar dependence was also found for the surface photovoltage measurements conducted for the layers consisting of multiple LB films of the examined compounds deposited on gold surfaces. The assumption has been made that these changes are associated with the influence of oligothiophene chain on the electrostatic potential distribution near the surface of the sample. The hypothesis was confirmed by the results of DFT calculations, which revealed that the value of Fermi level energy shifts in the opposite direction to the determined work function. The key highlights of this study are as follows: electronic structure tuning by oligothiophene side chain; DFT calculation on fullerene-thiophene system; work function measurements of thin molecular layers.

  15. Enhanced luminance of MEH-PPV based PLEDs using single walled carbon nanotube composite as an electron transporting layer

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Inderpreet, E-mail: inderpreetsingh_05@rediffmail.co [Materials Laboratory, Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi 110021 (India); Madhwal, Devinder; Verma, A.; Kumar, A.; Rait, S. [Materials Laboratory, Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi 110021 (India); Kaur, I.; Bharadwaj, L.M. [Central Scientific Instruments Organization, Sector-30, Chandigarh (India); Bhatia, C.S. [Department of Electrical and Computer Engineering, National University of Singapore (Singapore); Bhatnagar, P.K.; Mathur, P.C. [Materials Laboratory, Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi 110021 (India)

    2010-11-15

    An efficient electron transporting layer (ETL) based on single walled carbon nanotube (SWCNT) composites has been developed for poly [2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) based orange polymer light emitting diodes (PLEDs) and its effect on the performance of PLEDs has been examined. It is observed that with increase in SWCNT concentration, in ETL, the luminance and luminous efficiency of the PLEDs increase (about 5 times increase in luminance is observed at 5% w/w SWCNT concentration). The SWCNTs present in the MEH-PPV ETL boost the mobility of electrons injected from the cathode towards the emissive layer by establishing highly conducting percolation paths. This balances the concentration of holes and electrons in the emissive layer, which leads to enhanced emission from the PLEDs.

  16. Electronic and vibrational excitations in layered high Tc superconductors

    International Nuclear Information System (INIS)

    Agarwal, B.K.; Agarwal, S.; Yadav, P.S.; Kumar, S.; Negi, J.S.; Varshney, Namrata

    1991-01-01

    In the series of the layered high T c superconductors(A)sub(1,2)B 2 Casub(n-1)Cu n Osub(2n+3,4) (A=Tl or Bi; B=Ba or Sr), with n=number of consecutive Cu-O layers, the electron energy states of some of the Tl-based systems have been investigated. The electron and phonon dispersion curves have been obtained. The electronic states near the Fermi level are dominated by the hybridized Cu(d) and the O(p) orbitals. The dispersion curves are highly two-dimensional with very small dispersion along c-axis. The number of band is enhanced with increase in the number of the consecutive Cu-O planes (n). The present results agree with those obtained earlier for other superconducting phases. The phonons are overall dominated by the vibrations of the light mass oxygen atom modes both lying in or outside the Cu-O planes. The low-frequency phonons involve the motions of the heavier Tl, Ba atoms etc. (author). 6 refs., 4 figs., 1 tab

  17. Conceptual MEIC electron ring injection scheme using CEBAF as a full energy injector

    International Nuclear Information System (INIS)

    The Medium-energy Electron-Ion Collider (MEIC) proposed by Jefferson Lab is planning to use the newly upgraded 12 GeV CEBAF 1497 MHz SRF CW recirculating linac as a full-energy injector for the electron collider ring. The electron collider ring is proposed to reuse the 476 MHz PEP-II RF system to achieve high installed voltage and high beam power. The MEIC electron injection requires 3-10 (or 12) GeV beam in 3-4µs long bunch trains with low duty factor and high peak current, resulting in strong transient beam loading for the CEBAF. In this paper, we propose an injection scheme that can match the two systems' frequencies with acceptable injection time, and also address the transient beam loading issue in CEBAF. The scheme is compatible with future upgrade to 952.6 MHz SRF system in the electron ring.

  18. Atomic layer deposition as pore diameter adjustment tool for nanoporous aluminum oxide injection molding masks.

    Science.gov (United States)

    Miikkulainen, Ville; Rasilainen, Tiina; Puukilainen, Esa; Suvanto, Mika; Pakkanen, Tapani A

    2008-05-06

    The wetting properties of polypropylene (PP) surfaces were modified by adjusting the dimensions of the surface nanostructure. The nanostructures were generated by injection molding with nanoporous anodized aluminum oxide (AAO) as the mold insert. Atomic layer deposition (ALD) of molybdenum nitride film was used to control the pore diameters of the AAO inserts. The original 50-nm pore diameter of AAO was adjusted by depositing films of thickness 5, 10, and 15 nm on AAO. Bis(tert-butylimido)-bis(dimethylamido)molybdenum and ammonia were used as precursors in deposition. The resulting pore diameters in the nitride-coated AAO inserts were 40, 30, and 20 nm, respectively. Injection molding of PP was conducted with the coated inserts, as well as with the non-coated insert. Besides the pore diameter, the injection mold temperature was varied with temperatures of 50, 70, and 90 degrees C tested. Water contact angles of PP casts were measured and compared with theoretical contact angles calculated from Wenzel and Cassie-Baxter theories. The highest contact angle, 140 degrees , was observed for PP molded with the AAO mold insert with 30-nm pore diameter. The Cassie-Baxter theory showed better fit than the Wenzel theory to the experimental values. With the optimal AAO mask, the nanofeatures in the molded PP pieces were 100 nm high. In explanation of this finding, it is suggested that some sticking and stretching of the nanofeatures occurs during the molding. Increase in the mold temperature increased the contact angle.

  19. Development and design of double-layer co-injection moulded soy protein based drug delivery devices

    NARCIS (Netherlands)

    Vaz, C.M.; Doeveren, van P.F.N.M.; Reis, R.L.; Cunha, A.M.

    2003-01-01

    Novel double-layer delivery devices based on soy protein derived materials were designed and produced using an innovative two material co-injection moulding technique. It was demonstrated that the viscosity ratio between core and skin layer materials played an important role in the formation of the

  20. Electronic self-organization in layered transition metal dichalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Ritschel, Tobias

    2015-10-30

    The interplay between different self-organized electronically ordered states and their relation to unconventional electronic properties like superconductivity constitutes one of the most exciting challenges of modern condensed matter physics. In the present thesis this issue is thoroughly investigated for the prototypical layered material 1T-TaS{sub 2} both experimentally and theoretically. At first the static charge density wave order in 1T-TaS{sub 2} is investigated as a function of pressure and temperature by means of X-ray diffraction. These data indeed reveal that the superconductivity in this material coexists with an inhomogeneous charge density wave on a macroscopic scale in real space. This result is fundamentally different from a previously proposed separation of superconducting and insulating regions in real space. Furthermore, the X-ray diffraction data uncover the important role of interlayer correlations in 1T-TaS{sub 2}. Based on the detailed insights into the charge density wave structure obtained by the X-ray diffraction experiments, density functional theory models are deduced in order to describe the electronic structure of 1T-TaS{sub 2} in the second part of this thesis. As opposed to most previous studies, these calculations take the three-dimensional character of the charge density wave into account. Indeed the electronic structure calculations uncover complex orbital textures, which are interwoven with the charge density wave order and cause dramatic differences in the electronic structure depending on the alignment of the orbitals between neighboring layers. Furthermore, it is demonstrated that these orbital-mediated effects provide a route to drive semiconductor-to-metal transitions with technologically pertinent gaps and on ultrafast timescales. These results are particularly relevant for the ongoing development of novel, miniaturized and ultrafast devices based on layered transition metal dichalcogenides. The discovery of orbital textures

  1. Improved efficiency of organic light-emitting diodes with self-assembled molybdenum oxide hole injection layers

    Science.gov (United States)

    Liu, Chia-Wei; Tsai, Ming-Chih; Cheng, Tsung-Chin; Ho, Yu-Hsuan; You, Huang-kuo; Li, Chia-Shuo; Chen, Chin-Ti; Wu, Chih-I.

    2017-05-01

    In this paper, we demonstrate the use of self-assembly to fabricate solution-processed molybdenum oxide (MoO3) films by simply casting a metal oxide solution onto an indium tin oxide substrate. The self-assembled MoO3 (SA-MoO3) films were used as hole injection layers (HILs) in green phosphorescent organic light-emitting diodes. The devices with SA-MoO3 HILs exhibited nearly double the efficiency of the one made with commonly used evaporated MoO3 (e-MoO3) HILs. This improvement was attributed to the much smoother surface and smaller grains of the SA-MoO3 films to reduce the leakage currents, as shown by monitoring the surface morphology via atomic force microscopy and scanning electron microscopy. The work function and Mo 3d core level characteristics were determined via ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy. The e-MoO3 film offered better conductivity and hole injection ability; however, the increased device current may not enhance electroluminance proportionally. As a result, the efficiencies of SA-MoO3 devices were better than those of e-MoO3 devices.

  2. Techniques For Injection Of Pre-Charaterized Dust Into The Scrape Off Layer Of Fusion Plasma

    International Nuclear Information System (INIS)

    Roquemore, A.L.; John, B.; Friesen, F.; Hartzfeld, K.; Mansfield, D.K.

    2011-01-01

    Introduction of micron-sized dust into the scrape-off layer (SOL) of a plasma has recently found many applications aimed primarily at determining dust behavior in future fusion reactors. The dust particles are typically composed of materials intrinsic to a fusion reactor. On DIII-D and TEXTOR carbon dust has been introduced into the SOL using a probe inserted from below into the divertor region. On NSTX, both Li and tungsten dust have been dropped from the top of the machine into the SOL throughout the duration of a discharge, by utilizing a vibrating piezoelectric based particle dropper. The original particle dropper was developed to inject passivated Li powder ∼ 40 μm in diameter into the SOL to enhance plasma performance. A simplified version of the dropper was developed to introduce trace amounts of tungsten powder for only a few discharges, thus not requiring a large powder reservoir. The particles emit visible light from plasma interactions and can be tracked by either spectroscopic means or by fast frame rate visible cameras. This data can then be compared with dust transport codes such as DUSTT to make predictions of dust behavior in next-step devices such as ITER. For complete modeling results, it is desired to be able to inject pre-characterized dust particles in the SOL at various known poloidal locations, including near the vessel midplane. Purely mechanical methods of injecting particles are presently being studied using a modified piezoelectric-based powder dropper as a particle source and one of several piezo-based transducers to deflect the particles into the SOL. Vibrating piezo fans operating at 60 Hz with a deflection of ±2.5 cm can impart a significant horizontal boost in velocity. The highest injection velocities are expected from rotating paddle wheels capable of injecting particles at 10's of meters per second depending primarily on the rotation velocity and diameter of the wheel. Several injection concepts have been tested and will be

  3. To what extent can charge localization influence electron injection efficiency at graphene-porphyrin interfaces?

    KAUST Repository

    Parida, Manas R.

    2015-04-28

    Controlling the electron transfer process at donor- acceptor interfaces is a research direction that has not yet seen much progress. Here, with careful control of the charge localization on the porphyrin macrocycle using β -Cyclodextrin as an external cage, we are able to improve the electron injection efficiency from cationic porphyrin to graphene carboxylate by 120% . The detailed reaction mechanism is also discussed.

  4. Theory of coherent molecule to surface electron injection: An ...

    Indian Academy of Sciences (India)

    Administrator

    erogeneous electron transfer from a molecule to a semiconductor occurs before full vibrational relaxa- tion of the excited molecule is achieved. 5,6. Accor- dingly, theoretical description of the decay of the initial state has been formulated to include vibra- tional coherence in the transfer process. 4. 2. Analytical model.

  5. Novel cooling strategy for electronic packages: directly injected cooling

    NARCIS (Netherlands)

    Wits, Wessel Willems; Brok, G.J.H.M.; Mannak, J.H.; Legtenberg, Rob; Legtenberg, R.; van Houten, F.J.A.M.; Miedema, J.; Lutters, D.

    2008-01-01

    This publication discusses domain integration of various engineering disciplines as an effective methodology to design new and innovative products. A case study illustrates how this approach is applied to the design process of a high performance electronic product. A novel and improved method for

  6. The feasibility of using solution-processed aqueous La2O3 as effective hole injection layer in organic light-emitting diode

    Science.gov (United States)

    Zhang, Yan; Li, Wanshu; Zhang, Ting; Yang, Bo; Zheng, Qinghong; Xu, Jiwen; Wang, Hua; Wang, Lihui; Zhang, Xiaowen; Wei, Bin

    2018-01-01

    Low-cost and scalable manufacturing boosts organic electronic devices with all solution process. La2O3 powders and corresponding aqueous solutions are facilely synthesized. Atomic force microscopy and scanning electron microscopy measurements show that solution-processed La2O3 behaves superior film morphology. X-ray diffraction and X-ray photoelectron spectroscopy measurements verify crystal phase and typical La signals. In comparison with the most widely-used hole injection layers (HILs) of MoOx and poly(ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS), enhanced luminous efficiency is observed in organic light-emitting diode (OLED) using solution-processed La2O3 HIL. Current-voltage, impedance-voltage and phase angle-voltage transition curves clarify that solution-processed La2O3 behaves nearly comparable hole injection capacity to MoOx and PEDOT:PSS, and favorably tailors carrier balance. Moreover, the hole injection mechanism of solution-processed La2O3 is proven to be predominantly controlled by Fowler-Nordheim tunneling process and the hole injection barrier height between ITO and NPB via La2O3 interlayer is estimated to be 0.098 eV. Our experiments provide a feasible application of La2O3 in organic electronic devices with solution process.

  7. Corneal layer plate removal with Fluconazole injected corneal stroma and autologous conjunctival transplantation for keratomycosis

    Directory of Open Access Journals (Sweden)

    Li-Dong Yang

    2013-08-01

    Full Text Available AIM: To investigate the clinical effect of corneal layer plate removal with Fluconazole injected corneal stroma and autologous conjunctival transplantation for keratomycosis.METHODS: There were 168 cases suffered keratomycosis that the focus located shallow of the cornea and was not obvious to drug, who registered in our hospital from March 2005 to June 2010. In surgery we removed plate layer to cormea clear, the region was greater than focus for 0.5mm,then we injected fluconazole which is 2g/L density in corneal stroma to make the edema area greater than Removal of area for 0.5mm. At last we took pedicle conjunctival flap to cover the plant bed by continuous suture. Postoperative day use drug to drop eye and to observe that whether recurrent of the keratomycosis and how was the edema degrade, the blood supply of conjunctival graft pieces, how about the stimulating signs of the surgery eye, the vision.RESULTS: The improvement rate was 96.2% after surgery for seven days and the cure rate was 95.5% after surgery for one months. We found in 157 eyes accepted trigeminy surgery there were 6 eyes recurrence and the recurrence rate was 3.8%. The mean time of corneal stromal edema faded away was 13.4 hours. After surgery for one month there were 39 eyes(24.8%whose vision removed than preoperative, there were 91 eyes(58.0%whose vision were same as preoperative and there were 27 eyes(17.2%whose vision lower than preoperative. In these operations the loss ratio of corneal endothelium was from 0%-8%, the mean was 2.9%. The irritative symptoms postoperative were mild for 87%, moderate for 10% and severe for 3%. By this surgery the mean length of stay was 7.3 days so the mean hospitalization expenses only were 2160 RMB. Three months after surgery, 4 cases were slight corneal ectasia.CONCLUSION: This operation combined corneal layer plate removal, Fluconazole injected corneal stroma and autologous conjunctival transplantation for keratomycosis which was in

  8. High efficiency blue phosphorescent organic light-emitting diodes without electron transport layer

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Soon Ok [Department of Polymer Science and Engineering, Dankook University, Jukjeon-dong, Suji-gu, Yongin-si, Gyeonggi-do 448-701 (Korea, Republic of); Lee, Jun Yeob, E-mail: leej17@dankook.ac.kr [Department of Polymer Science and Engineering, Dankook University, Jukjeon-dong, Suji-gu, Yongin-si, Gyeonggi-do 448-701 (Korea, Republic of)

    2011-08-15

    High efficiency blue phosphorescent organic light-emitting diodes were fabricated without an electron transport layer using a spirobifluorene based blue triplet host material. The simple blue PHOLEDs without the electron transport layer showed a high external quantum efficiency and current efficiency of 16.1% and 30.2 cd/A, respectively. The high device performances of the electron transport layer free blue PHOLEDs were comparable to those of blue PHOLEDs with the electron transport layer. - Highlights: > Simple device structure without electron transport layer. > High efficiency blue phosphorescent organic light-emitting diode. > Spirobifluorene based high triplet energy host material.

  9. The manufactoring of a two–layered injection mold by welding

    Directory of Open Access Journals (Sweden)

    A. Košnik

    2011-10-01

    Full Text Available The article presents the technology of deposit cladding different materials, using the injection molds for thermoplastic as a case study. The aim of the study is to surface weld to the working surface of the mold a different material with corresponding physical properties. Steel (1.1141 and a copper alloy were used as the base, onto which different materials were surface-welded. Tungsten inert gas (TIG welding was employed to make molds inserts. An analysis of cross-sectioned specimens was made by optical microscopy, and chemical and hardness profiles were measured too. The thermal conductivity of base and cladded layer was also tested. Finally, a thermal fatigue test was employed to investigate the thermal fatigue properties of such surfaces.

  10. Designing a Prototype LPG Injection Electronic Control Unit for a Carburetted Gasoline Engine

    Directory of Open Access Journals (Sweden)

    Barış ERKUŞ

    2015-07-01

    Full Text Available In this study, the originally carburetted gasoline engine was converted to gas-phase liquefied petroleum gas (LPG injection engine by using an after market LPG conversion kit's components except the electronic control unit (ECU. Instead of after market LPG injection ECU, the ECU which was designed considering the effects of  electromagnetic interference (EMI, was used for controlling injection. The designed ECU was tested in terms of EMI while the engine was being run and it was detected that the EMI noises could be suppressed as possible by taken measures. Designed ECU was used in performance tests at different engine conditions and the results obtained with LPG injection were compared with the results obtained with LPG carburetion. According to the performance test results, LPG injection ECU designed in this study could help to achieve low exhaust emissions and high engine performance.  

  11. Cross-field injection of a charged, polarized, ion-electron beam

    International Nuclear Information System (INIS)

    Hamilton, G.W.

    1976-01-01

    An early idea for fueling a controlled fusion device had been the injection of a polarized mixture of ions and electrons across a magnetic field and into the device. Now, the beam intensity (several kA/cm 2 ) required for this technique is available from pulsed ion diodes. Remaining feasibility questions involve beam optics and trapping. The most obvious advantage over neutral-beam injection is avoidance of the need to produce high-energy atoms. Therefore, the technique will compete best at ion energies above 100 keV. The method appears feasible for pulsed startup of mirror machines, but not for steady-state injection into a plasma

  12. Observation of injection and pinning of domain walls in magneticnanowires using photoemission electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Thomas, Luc; Rettner, Charles; Hayashi, Masamitsu; Samant, MaheshG.; Parkin Stuart S.P.; Doran, Andrew; Scholl, Andreas

    2005-12-19

    Photoemission electron microscopy is used to explore the injection and pinning of magnetic domain walls in 250-nm-wide, 20-nm-thick Permalloy nanowires. Domain walls are injected from a micron-sized elliptical nucleation pad at one end of the nanowire. A vortex-like structure is readily nucleated in this pad at low magnetic fields 15 Oe, whereas injection of a domain wall into the nanowire requires significantly larger fields 60 Oe. Domain walls are pinned in the nanowire at notches patterned along the wires edges. The domain walls are observed to have vortex-like structures with chiralities that vary in successive experiments.

  13. Observation of injection and pinning of domain walls in magnetic nanowires using photoemission electron microscopy

    Science.gov (United States)

    Thomas, Luc; Rettner, Charles; Hayashi, Masamitsu; Samant, Mahesh G.; Parkin, Stuart S. P.; Doran, Andrew; Scholl, Andreas

    2005-12-01

    Photoemission electron microscopy is used to explore the injection and pinning of magnetic domain walls in 250-nm-wide, 20-nm-thick Permalloy nanowires. Domain walls are injected from a micron-sized elliptical nucleation pad at one end of the nanowire. A vortex-like structure is readily nucleated in this pad at low magnetic fields (<15Oe), whereas injection of a domain wall into the nanowire requires significantly larger fields (˜60Oe). Domain walls are pinned in the nanowire at notches patterned along the wire's edges. The domain walls are observed to have vortex-like structures with chiralities that vary in successive experiments.

  14. Electrochemiluminescence of coumarin derivatives induced by injection of hot electrons into aqueous electrolyte solution

    International Nuclear Information System (INIS)

    Helin, Mika; Jiang, Qinghong; Ketamo, Hanna; Hakansson, Markus; Spehar, Anna-Maria; Kulmala, Sakari; Ala-Kleme, Timo

    2005-01-01

    Hot electrons can be injected from conductor/insulator/electrolyte (C/I/E) junctions into an aqueous electrolyte solution by cathodic pulse-polarization of the electrode. Injected hot electrons induce electrogenerated chemiluminescence of various luminophores including coumarins in fully aqueous solutions. This is based on the tunnel emission of hot electrons into aqueous electrolyte solution, which can result in the generation of hydrated electrons as reducing mediators. These tunnel-emitted electrons allow also the production of highly oxidizing radicals from added precursors. This work shows that coumarin derivatives are suitable candidates as ECL labels for bioaffinity assays or other analytical applications in which detection is based on the ECL of pulse-polarized C/I/E tunnel-emission electrodes in fully aqueous solutions. The mechanisms of the ECL of coumarins are discussed and the analytical applicability of the ECL of three coumarin derivatives is studied

  15. Study of electron temperature evolution during sawtoothing and pellet injection using thermal electron cyclotron emission in the Alcator C tokamak

    International Nuclear Information System (INIS)

    Gomez, C.C.

    1986-05-01

    A study of the electron temperature evolution has been performed using thermal electron cyclotron emission. A six channel far infrared polychromator was used to monitor the radiation eminating from six radial locations. The time resolution was <3 μs. Three events were studied, the sawtooth disruption, propagation of the sawtooth generated heatpulse and the electron temperature response to pellet injection. The sawtooth disruption in Alcator takes place in 20 to 50 μs, the energy mixing radius is approx. 8 cm or a/2. It is shown that this is inconsistent with single resonant surface Kadomtsev reconnection. Various forms of scalings for the sawtooth period and amplitude were compared. The electron heatpulse propagation has been used to estimate chi e(the electron thermal diffusivity). The fast temperature relaxation observed during pellet injection has also been studied. Electron temperature profile reconstructions have shown that the profile shape can recover to its pre-injection form in a time scale of 200 μs to 3 ms depending on pellet size

  16. Cold optical injection producing monoenergetic, multi-GeV electron bunches.

    Science.gov (United States)

    Davoine, X; Lefebvre, E; Rechatin, C; Faure, J; Malka, V

    2009-02-13

    A cold optical injection mechanism for a laser-plasma accelerator is described. It relies on a short, circularly polarized, low-energy laser pulse counterpropagating to and colliding with a circularly polarized main pulse in a low density plasma. Contrary to previously published optical injection schemes, injection is not caused here by electron heating. Instead, the collision between the pulses creates a spatially periodic and time-independent beat force. This force can block the longitudinal electron motion, leading to their entry and injection into the propagating wake. In a specific setup, we compute after acceleration over 0.6 mm, a 60 MeV, 50 pC electron bunch with 0.7 MeV rms energy spread, proving the interest of this scheme to inject electron bunches with a narrow absolute energy spread. Acceleration to 3 GeV with a rms spread smaller than 1% is computed after propagation over 3.8 cm in a plasma channel.

  17. Control of electron injection and acceleration in laser-wakefield accelerators

    International Nuclear Information System (INIS)

    Guillaume, E.

    2015-01-01

    Laser-plasma accelerators provide a promising compact alternative to conventional accelerators. Plasma waves with extremely strong electric fields are generated when a high intensity laser is focused into an underdense gas target. Electrons that are trapped in these laser-driven plasma waves can be accelerated up to energies of a few GeVs. Despite their great potential, laser-wakefield accelerators face some issues, regarding notably the stability and reproducibility of the beam when electrons are injected in the accelerating structure. In this manuscript, different techniques of electron injection are presented and compared, notably injection in a sharp density gradient and ionization injection. It is shown that combining these two methods allows for the generation of stable and tunable electron beams. We have also studied a way to manipulate the electron bunch in the phase-space in order to accelerate the bunch beyond the dephasing limit. Such a technique was used with quasi-monoenergetic electron beams to enhance their energy. Moreover, the origin of the evolution of the angular momentum of electrons observed experimentally was investigated. Finally, we demonstrated experimentally a new method - the laser-plasma lens - to strongly reduce the divergence of the electron beam. This laser-plasma lens consists of a second gas jet placed at the exit of the accelerator. The laser pulse drives a wakefield in this second jet whose focusing forces take advantage to reduce the divergence of the trailing electron bunch. A simple analytical model describing the principle is presented, underlining the major importance of the second jet length, density and distance from the first jet. Experimental demonstration of the laser-plasma lens shows a divergence reduction by a factor of 2.6 for electrons up to 300 MeV, in accordance with the model predictions

  18. Syringe-Injectable Electronics with a Plug-and-Play Input/Output Interface.

    Science.gov (United States)

    Schuhmann, Thomas G; Yao, Jun; Hong, Guosong; Fu, Tian-Ming; Lieber, Charles M

    2017-09-13

    Syringe-injectable mesh electronics represent a new paradigm for brain science and neural prosthetics by virtue of the stable seamless integration of the electronics with neural tissues, a consequence of the macroporous mesh electronics structure with all size features similar to or less than individual neurons and tissue-like flexibility. These same properties, however, make input/output (I/O) connection to measurement electronics challenging, and work to-date has required methods that could be difficult to implement by the life sciences community. Here we present a new syringe-injectable mesh electronics design with plug-and-play I/O interfacing that is rapid, scalable, and user-friendly to nonexperts. The basic design tapers the ultraflexible mesh electronics to a narrow stem that routes all of the device/electrode interconnects to I/O pads that are inserted into a standard zero insertion force (ZIF) connector. Studies show that the entire plug-and-play mesh electronics can be delivered through capillary needles with precise targeting using microliter-scale injection volumes similar to the standard mesh electronics design. Electrical characterization of mesh electronics containing platinum (Pt) electrodes and silicon (Si) nanowire field-effect transistors (NW-FETs) demonstrates the ability to interface arbitrary devices with a contact resistance of only 3 Ω. Finally, in vivo injection into mice required only minutes for I/O connection and yielded expected local field potential (LFP) recordings from a compact head-stage compatible with chronic studies. Our results substantially lower barriers for use by new investigators and open the door for increasingly sophisticated and multifunctional mesh electronics designs for both basic and translational studies.

  19. The effect of electron density fluctuations on critical temperature in layered superconductors with arbitrary thickness of conducting layer

    Science.gov (United States)

    Askerzade, I. N.

    2018-04-01

    In this work, we analyse the effect of electron density fluctuations of in layered superconductors on the transition temperature Tc. Primarily, we consider the effect of thickness of conducting layer in modelling of superconducting compounds. It is observed that increasing the thickness of conducting layers increases the transition temperature Tc. Also it is shown that, the fluctuations of electron density has negligible character in the case layers with highly different dielectric constants. Obtained results are applicable to Bi2 Sr2 Can - 1 CunO2 n + 4 + δ compounds with n = 1,2,3.

  20. Layered Black Phosphorus: Strongly Anisotropic Magnetic, Electronic, and Electron-Transfer Properties.

    Science.gov (United States)

    Sofer, Zdeněk; Sedmidubský, David; Huber, Štěpán; Luxa, Jan; Bouša, Daniel; Boothroyd, Chris; Pumera, Martin

    2016-03-01

    Layered elemental materials, such as black phosphorus, exhibit unique properties originating from their highly anisotropic layered structure. The results presented herein demonstrate an anomalous anisotropy for the electrical, magnetic, and electrochemical properties of black phosphorus. It is shown that heterogeneous electron transfer from black phosphorus to outer- and inner-sphere molecular probes is highly anisotropic. The electron-transfer rates differ at the basal and edge planes. These unusual properties were interpreted by means of calculations, manifesting the metallic character of the edge planes as compared to the semiconducting properties of the basal plane. This indicates that black phosphorus belongs to a group of materials known as topological insulators. Consequently, these effects render the magnetic properties highly anisotropic, as both diamagnetic and paramagnetic behavior can be observed depending on the orientation in the magnetic field. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. One-Dimensional Electron Transport Layers for Perovskite Solar Cells

    Science.gov (United States)

    Thakur, Ujwal K.; Kisslinger, Ryan; Shankar, Karthik

    2017-01-01

    The electron diffusion length (Ln) is smaller than the hole diffusion length (Lp) in many halide perovskite semiconductors meaning that the use of ordered one-dimensional (1D) structures such as nanowires (NWs) and nanotubes (NTs) as electron transport layers (ETLs) is a promising method of achieving high performance halide perovskite solar cells (HPSCs). ETLs consisting of oriented and aligned NWs and NTs offer the potential not merely for improved directional charge transport but also for the enhanced absorption of incoming light and thermodynamically efficient management of photogenerated carrier populations. The ordered architecture of NW/NT arrays affords superior infiltration of a deposited material making them ideal for use in HPSCs. Photoconversion efficiencies (PCEs) as high as 18% have been demonstrated for HPSCs using 1D ETLs. Despite the advantages of 1D ETLs, there are still challenges that need to be overcome to achieve even higher PCEs, such as better methods to eliminate or passivate surface traps, improved understanding of the hetero-interface and optimization of the morphology (i.e., length, diameter, and spacing of NWs/NTs). This review introduces the general considerations of ETLs for HPSCs, deposition techniques used, and the current research and challenges in the field of 1D ETLs for perovskite solar cells. PMID:28468280

  2. One-Dimensional Electron Transport Layers for Perovskite Solar Cells

    Directory of Open Access Journals (Sweden)

    Ujwal K. Thakur

    2017-04-01

    Full Text Available The electron diffusion length (Ln is smaller than the hole diffusion length (Lp in many halide perovskite semiconductors meaning that the use of ordered one-dimensional (1D structures such as nanowires (NWs and nanotubes (NTs as electron transport layers (ETLs is a promising method of achieving high performance halide perovskite solar cells (HPSCs. ETLs consisting of oriented and aligned NWs and NTs offer the potential not merely for improved directional charge transport but also for the enhanced absorption of incoming light and thermodynamically efficient management of photogenerated carrier populations. The ordered architecture of NW/NT arrays affords superior infiltration of a deposited material making them ideal for use in HPSCs. Photoconversion efficiencies (PCEs as high as 18% have been demonstrated for HPSCs using 1D ETLs. Despite the advantages of 1D ETLs, there are still challenges that need to be overcome to achieve even higher PCEs, such as better methods to eliminate or passivate surface traps, improved understanding of the hetero-interface and optimization of the morphology (i.e., length, diameter, and spacing of NWs/NTs. This review introduces the general considerations of ETLs for HPSCs, deposition techniques used, and the current research and challenges in the field of 1D ETLs for perovskite solar cells.

  3. One-Dimensional Electron Transport Layers for Perovskite Solar Cells.

    Science.gov (United States)

    Thakur, Ujwal K; Kisslinger, Ryan; Shankar, Karthik

    2017-04-29

    The electron diffusion length ( L n ) is smaller than the hole diffusion length ( L p ) in many halide perovskite semiconductors meaning that the use of ordered one-dimensional (1D) structures such as nanowires (NWs) and nanotubes (NTs) as electron transport layers (ETLs) is a promising method of achieving high performance halide perovskite solar cells (HPSCs). ETLs consisting of oriented and aligned NWs and NTs offer the potential not merely for improved directional charge transport but also for the enhanced absorption of incoming light and thermodynamically efficient management of photogenerated carrier populations. The ordered architecture of NW/NT arrays affords superior infiltration of a deposited material making them ideal for use in HPSCs. Photoconversion efficiencies (PCEs) as high as 18% have been demonstrated for HPSCs using 1D ETLs. Despite the advantages of 1D ETLs, there are still challenges that need to be overcome to achieve even higher PCEs, such as better methods to eliminate or passivate surface traps, improved understanding of the hetero-interface and optimization of the morphology (i.e., length, diameter, and spacing of NWs/NTs). This review introduces the general considerations of ETLs for HPSCs, deposition techniques used, and the current research and challenges in the field of 1D ETLs for perovskite solar cells.

  4. Indirect Band Gap Emission by Hot Electron Injection in Metal/MoS2 and Metal/WSe2 Heterojunctions

    Science.gov (United States)

    Li, Zhen; Ezhilarasu, Goutham; Chatzakis, Ioannis; Dhall, Rohan; Chen, Chun-Chung; Cronin, Stephen

    Transition metal dichalcogenides (TMDCs), such as MoS2 and WSe2, are free of dangling bonds, therefore make more `ideal' Schottky junctions than bulk semiconductors, which produce recombination centers at the interface with metals, inhibiting charge transfer. Here, we observe a more than 10X enhancement in the indirect band gap PL of TMDCs deposited on various metals, while the direct band gap emission remains unchanged. We believe the main mechanism of light emission arises from photoexcited hot electrons in the metal that are injected into the conduction band of MoS2 and WSe2, and subsequently recombine radiatively with minority holes. Since the conduction band at the K-point is 0.5eV higher than at the Σ-point, a lower Schottky barrier of the Σ-point band makes electron injection more favorable. Also, the Σ band consists of the sulfur pz orbital, which overlaps more significantly with the electron wavefunctions in the metal. This enhancement only occurs for thick flakes, and is absent in monolayer and few-layer flakes. Here, the flake thickness must exceed the depletion width of the Schottky junction, in order for efficient radiative recombination to occur in the TMDC. The intensity of this indirect peak decreases at low temperatures. Reference: DOI: 10.1021/acs.nanolett.5b00885

  5. Effect of compressive and tensile strain on misfit dislocation injection in SiGe epitaxial layers

    Energy Technology Data Exchange (ETDEWEB)

    Wegscheider, W. [Walter Schottky Institut, Garching (Germany); Cerva, H. [Siemens AG, Research Lab., Muenchen (Germany)

    1993-05-01

    The relaxation behavior of short-period Si/Ge superlattices and Si{sub x}Ge{sub 1-x} alloy layers under compressive and tensile strain field is compared experimentally by means of transmission electron microscopy as well as theoretically on ethebasis of a half-loop dislocation nucleation mode. It was found that misfit dislocations in tensily strained layers grown on Ge(001) substrates are imperfect and of the 90{degrees} Shockley type provided some critical misfit f{sub c} is exceeded. Subsequent nucleation and glide of these partial dislocations on adjacent (111) glide planes leads to the formation of stacking faults and microtwins. In the low misfit regime (flayers which experience a compressive strain field within the (001) growth plane are generally of the 60{degrees} type. In this case the critical thickness for coherent growth is found to be substantially enlarged with respect to the inverse strain situation where microtwin formation occurs. 30 refs., 8 figs.

  6. Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells.

    Science.gov (United States)

    Zhou, Nanjia; Kim, Myung-Gil; Loser, Stephen; Smith, Jeremy; Yoshida, Hiroyuki; Guo, Xugang; Song, Charles; Jin, Hosub; Chen, Zhihua; Yoon, Seok Min; Freeman, Arthur J; Chang, Robert P H; Facchetti, Antonio; Marks, Tobin J

    2015-06-30

    In diverse classes of organic optoelectronic devices, controlling charge injection, extraction, and blocking across organic semiconductor-inorganic electrode interfaces is crucial for enhancing quantum efficiency and output voltage. To this end, the strategy of inserting engineered interfacial layers (IFLs) between electrical contacts and organic semiconductors has significantly advanced organic light-emitting diode and organic thin film transistor performance. For organic photovoltaic (OPV) devices, an electronically flexible IFL design strategy to incrementally tune energy level matching between the inorganic electrode system and the organic photoactive components without varying the surface chemistry would permit OPV cells to adapt to ever-changing generations of photoactive materials. Here we report the implementation of chemically/environmentally robust, low-temperature solution-processed amorphous transparent semiconducting oxide alloys, In-Ga-O and Ga-Zn-Sn-O, as IFLs for inverted OPVs. Continuous variation of the IFL compositions tunes the conduction band minima over a broad range, affording optimized OPV power conversion efficiencies for multiple classes of organic active layer materials and establishing clear correlations between IFL/photoactive layer energetics and device performance.

  7. Evaluation of intracameral injection of ranibizumab and bevacizumab on the corneal endothelium by scanning electron microscopy.

    Science.gov (United States)

    Ari, Seyhmus; Nergiz, Yusuf; Aksit, Ihsan; Sahin, Alparslan; Cingu, Kursat; Caca, Ihsan

    2015-03-01

    To evaluate the effects of intracameral injection of ranibizumab and bevacizumab on the corneal endothelium by scanning electron microscopy (SEM). Twenty-eight female rabbits were randomly divided into four equal groups. Rabbits in groups 1 and 2 underwent intracameral injection of 1 mg/0.1 mL and 0.5 mg/0.05 mL ranibizumab, respectively; group 3 was injected with 1.25 mg/0.05 mL bevacizumab. All three groups were injected with a balanced salt solution (BSS) into the anterior chamber of the left (fellow) eye. None of the rabbits in group 4 underwent an injection. Corneal thickness and intraocular pressure were measured before the injections, on the first day, and in the first month after injection. The rabbits were sacrificed and corneal tissues were excised in the first month after injection. Specular microscopy was used for the corneal endothelial cell count. Endothelial cell density was assessed and comparisons drawn between the groups and the control. Micrographs were recorded for SEM examination. The structure of the corneal endothelial cells, the junctional area of the cell membrane, the distribution of microvillus, and the cell morphology of the eyes that underwent intracameral injection of vascular endothelial growth factor (VEGF), BSS, and the control group were compared. Corneal thickness and intraocular pressure were not significantly different between the groups that underwent anti-VEGF or BSS injection and the control group on the first day and in the first month of injection. The corneal endothelial cell count was significantly diminished in all three groups; predominantly in group 1 and 2 (P<0.05). The SEM examination revealed normal corneal endothelial histology in group 3 and the control group. Eyes in group 1 exhibited indistinctness of corneal endothelial cell borders, microvillus loss in the luminal surface, excessive blebbing, and disintegration of intercellular junctions. In group 2, the cell structure of the corneal endothelium

  8. Low frequency electrostatic instabilities excited by injection of an electron beam in space

    International Nuclear Information System (INIS)

    Hwang, Y.S.; Okuda, H.

    1989-02-01

    One-dimensional particle simulations have been carried out to study the low frequency broadband electrostatic noise that propagates almost perpendicularly from the magnetic field line when a nonrelativistic electron beam is injected into space from a spacecraft. For T/sub e/ = T/sub i/ the electrostatic ion cyclotron waves appear as well as the waves near the lower hybrid frequency. When the magnetic field is reduced so that Ω/sub e/ T/sub i/, oblique ion acoustic instabilities appear to propagate almost perpendicular to the magnetic field. In addition, a very low frequency mode at ω << Ω/sub i/ is found to be generated by the electrons flowing into the conductor. Both the ion injected beam electrons as well as the ambient electrons flowing into the spacecraft are responsible for generating those instabilities, which accelerate ions perpendicular to the magnetic field. 11 refs., 9 figs

  9. Transient phenomena during electron beam injection in the Saclay 45 MeV accelerator

    International Nuclear Information System (INIS)

    Marcou, J.; Papiernik, A.; Wartski, L.; Bolore, M.; Filippi, G.; Roland, S.

    1969-01-01

    The principal features of transient phenomena, when electron beams are injected in a constant field linear accelerator, are analysed and interpreted by the use of a simple theory. Influence of these transient phenomena on the energy of accelerated particles is observed using a relatively precise method. For very large beam currents, non linear phenomena due to beam deformation can be exhibited, when the electron velocity is not exactly equal to the light velocity. (author) [fr

  10. Ultrafast Phase Transition in Vanadium Dioxide Driven by Hot-Electron Injection

    Directory of Open Access Journals (Sweden)

    Prasankumar R. P.

    2013-03-01

    Full Text Available We present a novel all-optical method of triggering the phase transition in vanadium dioxide by means of ballistic electrons injected across the interface between a mesh of Au nanoparticles coveringd VO2 nanoislands. By performing non-degenerate pump-probe transmission spectroscopy on this hybrid plasmonic/phase-changing nanostructure, structural and electronic dynamics can be retrieved and compared.

  11. The controllable L-H transition realized by injection of electrons

    International Nuclear Information System (INIS)

    Pan Yuan; Wang Maoquan; Mao Jianshan; Li Jiangang

    1996-02-01

    A new way to get and control H mode is proposed. Theoretic analysis and calculation show that the electron injection by pulsed E x B drift can trigger the H mode without direct contact with plasma and could realize the feedback control for the H mode. A repeatable pulsed field and electron beam system with a frequency of 1 k Hz that has been demonstrated enough for HT-6M Tokamak experiment are given in detail. (3 figs.)

  12. Cyclotron resonance study of the two-dimensional electron layers and double layers in tilted magnetic fields

    Czech Academy of Sciences Publication Activity Database

    Goncharuk, Natalya; Smrčka, Ludvík; Kučera, Jan

    2004-01-01

    Roč. 22, - (2004), s. 590-593 ISSN 1386-9477. [International Conference on Electronic Properties of Two-Dimensional Systems /15./. Nara, 14.07.2003-18.07.2003] R&D Projects: GA ČR GA202/01/0754 Institutional research plan: CEZ:AV0Z1010914 Keywords : single layer * double layer * two-dimensional electron system * cyclotron resonance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.898, year: 2004

  13. Injection control development of the JT-60U electron cyclotron heating system

    Energy Technology Data Exchange (ETDEWEB)

    Hiranai, Shinichi; Shinozaki, Shin-ichi; Yokokura, Kenji; Moriyama, Shinichi [Japan Atomic Energy Research Inst., Naka, Ibaraki (Japan). Naka Fusion Research Establishment; Sato, Fumiaki [Nippon Advanced Technology Co., Ltd., Tokai, Ibaraki (Japan); Suzuki, Yasuo [Atomic Energy General Service Co., Ltd., Tokai, Ibaraki (Japan); Ikeda, Yoshitaka [Japan Atomic Energy Research Inst., Kashiwa, Chiba (Japan)

    2003-03-01

    The JT-60U electron cyclotron heating (ECH) System injects a millimeteric wave at 110 GHz into the JT-60 Plasma, and heats the plasma or drives a current locally to enhance the confinement performance of the JT-60 plasma. The system consists of four sets of high power gyrotrons, high voltage power supplies and transmission lines, and two antennas that launch electron cyclotron (EC) beams toward the plasma. The key features of the injection control system are streering of the direction of the EC beam by driving the movable mirror in the antenna, and capability to set any combination of polarization angle and ellipticity by rotating the two grooved mirrors in the polarizers. This report represents the design, fabrication and improvements of the injection control system. (author)

  14. Down-ramp injection and independently controlled acceleration of electrons in a tailored laser wakefield accelerator

    CERN Document Server

    Hansson, M.; Davoine, X.; Ekerfelt, H.; Svensson, K.; Persson, A.; Wahlström, C.-G.; Lundh, O.; 10.1103/PhysRevSTAB.18.071303

    2015-01-01

    We report on a study on controlled injection of electrons into the accelerating phase of a plasma wakefield accelerator by tailoring the target density distribution using two independent sources of gas. The tailored density distribution is achieved experimentally by inserting a narrow nozzle, with an orifice diameter of only 400  μm , into a jet of gas supplied from a 2 mm diameter nozzle. The combination of these two nozzles is used to create two regions of different density connected by a density gradient. Using this setup we show independent control of the charge and energy distribution of the bunches of accelerated electron as well as decreased shot-to-shot fluctuations in these quantities compared to self-injection in a single gas jet. Although the energy spectra are broad after injection, simulations show that further acceleration acts to compress the energy distribution and to yield peaked energy spectra.

  15. Computations on injection into organics - or how to let electrons shine

    NARCIS (Netherlands)

    Uijttewaal, M.A.

    2007-01-01

    This thesis studies various aspects of electron injection into organic light-emitting diodes (OLEDs) using density functional theory and the master equation approach (only the last chapter). The first part of the thesis studies the relation between the work function and the surface stability of a

  16. Multipoint observations of energetic electron injections with MMS and Van Allen Probes

    Science.gov (United States)

    Turner, D. L.; Fennell, J. F.; Blake, J. B.; Claudepierre, S. G.; Jaynes, A. N.; Baker, D. N.; Reeves, G. D.; Cohen, I. J.; Mauk, B.; Li, W.; Kletzing, C.; Torbert, R. B.; Burch, J. L.

    2016-12-01

    Between March and September of 2016, the orbits of NASA's Magnetospheric Multiscale (MMS) and Van Allen Probes missions overlapped on the dawn side of the near-equatorial magnetosphere, a region ideal for studying injections of 10s to 100s of keV electrons from the plasma sheet into the inner magnetosphere. During this period, the four MMS spacecraft also underwent a series of conjunctions with both Van Allen Probes, including several in which all six spacecraft were within 1 Earth radii of each other. From such multipoint observations, we investigate the connection between Earth's magnetotail and inner magnetosphere via dipolarization events and the energetic particle injections associated with them. Using the multipoint MMS data, we show how dipolarization fronts surge earthwards through the tail at 100s of kilometers per second, corresponding to strong electric fields that accelerate energetic particles and transport them earthward. Combining MMS with Van Allen Probes, we are able to estimate the transport of particles over larger spatial scales (macroscopic view) and multipoint observations of wave activity during close conjunctions (microscopic view). With such observations, we examine and report on new perspectives concerning the role of energetic electron injections as the seed populations of Earth's outer radiation belt electrons as well as the relationship between freshly injected electrons and chorus and ultra-low frequency (ULF) wave activity.

  17. CURRENT SHEET REGULATION OF SOLAR NEAR-RELATIVISTIC ELECTRON INJECTION HISTORIES

    Energy Technology Data Exchange (ETDEWEB)

    Agueda, N.; Sanahuja, B. [Departament d' Astronomia i Meteorologia, Institut de Ciencies del Cosmos, Universitat de Barcelona (Spain); Vainio, R. [Department of Physics, University of Helsinki (Finland); Dalla, S. [Jeremiah Horrocks Institute, University of Central Lancashire (United Kingdom); Lario, D. [Applied Physics Laboratory, Johns Hopkins University (United States)

    2013-03-10

    We present a sample of three large near-relativistic (>50 keV) electron events observed in 2001 by both the ACE and the Ulysses spacecraft, when Ulysses was at high-northern latitudes (>60 Degree-Sign ) and close to 2 AU. Despite the large latitudinal distance between the two spacecraft, electrons injected near the Sun reached both heliospheric locations. All three events were associated with large solar flares, strong decametric type II radio bursts and accompanied by wide (>212 Degree-Sign ) and fast (>1400 km s{sup -1}) coronal mass ejections (CMEs). We use advanced interplanetary transport simulations and make use of the directional intensities observed in situ by the spacecraft to infer the electron injection profile close to the Sun and the interplanetary transport conditions at both low and high latitudes. For the three selected events, we find similar interplanetary transport conditions at different heliolatitudes for a given event, with values of the mean free path ranging from 0.04 AU to 0.27 AU. We find differences in the injection profiles inferred for each spacecraft. We investigate the role that sector boundaries of the heliospheric current sheet (HCS) have on determining the characteristics of the electron injection profiles. Extended injection profiles, associated with coronal shocks, are found if the magnetic footpoints of the spacecraft lay in the same magnetic sector as the associated flare, while intermittent sparse injection episodes appear when the spacecraft footpoints are in the opposite sector or a wrap in the HCS bounded the CME structure.

  18. High Hole-Mobility Molecular Layer Made from Strong Electron Acceptor Molecules with Metal Adatoms.

    Science.gov (United States)

    Yamane, Hiroyuki; Kosugi, Nobuhiro

    2017-11-02

    The electronic structure of 7,7,8,8-tetracyanoquinodimethane (TCNQ) and 2,3,5,6-tetrafluoro-TCNQ (F 4 TCNQ) monolayers on Au(111) has been investigated by means of angle-resolved photoemission spectroscopy (ARPES) with synchrotron radiation. In contrast to the physisorbed TCNQ/Au(111) interface, the high-resolution core-level photoemission spectra and the low-energy electron diffraction at the F 4 TCNQ/Au(111) interface show evidence for the strong charge transfer (CT) from Au to F 4 TCNQ and for the Au atom segregation from the underlying Au(111) surface, suggesting a possible origin of the spontaneous formation of the two-dimensional F 4 TCNQ-Au network. The ARPES experiment reveals a low hole-injection barrier and large band dispersion in the CT-induced topmost valence level of the F 4 TCNQ-Au network with 260 meV bandwidth due to the adatom-mediated intermolecular interaction. These results indicate that strong electron acceptor molecules with metal adatoms can form high hole-mobility molecular layers by controlling the molecule-metal ordered structure and their CT interaction.

  19. Electron-acoustic solitary waves and double layers with an electron beam and phase space electron vortices in space plasmas

    Science.gov (United States)

    El-Taibany, W. F.

    2005-01-01

    The nonlinear propagation of electron acoustic waves (EAWs) in a plasma composed of a cold electron fluid, hot electrons obeying trapped/vortex-like distribution, warm electron beam, and stationary ions is considered. The streaming velocity of the beam, uo, plays the dominant role in changing the topology of the linear dispersion relation. For small but finite amplitude EAWs, a modified Korteweg de Vries (MKdV) equation is derived. It is found that the MKdV supports EAWs having a positive potential, which corresponds to a hole (hump) in the cold (hot) electron number density. The energy soliton amplitude decreases, though its width increases for any increase in the beam parameters. In the vicinity of the isothermal population, a nonlinear evolution equation with mixed nonlinearity is obtained. Its solution gives a (compressive/rarefactive) soliton or a compressive double layer (DL) depending on the system parameters. For arbitrary amplitude EAWs, the exact Sagdeev potential has been derived. The admitted Mach number regime widens due to an increase of the beam parameters. With a better approximation in the Sagdeev potential, more features of solitary waves, e.g., spiky and explosive, are also highlighted. The introduced effects modify significantly the wave velocity, the amplitude, and the width of the EAWs investigated numerically. This theoretical model is in good agreement with the broadband noise emission observed by Geotail spacecraft in the plasma sheet boundary layer of the Earth's magnetosphere.

  20. Characterization of individual layers in a bilayer electron system produced in a wide quantum well

    Science.gov (United States)

    Dorozhkin, S. I.; Kapustin, A. A.; Fedorov, I. B.; Umansky, V.; von Klitzing, K.; Smet, J. H.

    2018-02-01

    Here, we report on a transparent method to characterize individual layers in a double-layer electron system, which forms in a wide quantum well, and to determine their electron densities. The technique relies on the simultaneous measurement of the capacitances between the electron system and gates located on either side of the well. Modifications to the electron wave function due to the population of the second subband and the appearance of an additional electron layer can be detected. The magnetic field dependence of these capacitances is dominated by quantum corrections caused by the occupation of Landau levels in the nearest electron layer. The technique should be equally applicable to other implementations of a double layer electron system.

  1. Effects of local high-frequency perturbation on a turbulent boundary layer by synthetic jet injection

    International Nuclear Information System (INIS)

    Guo, Hao; Huang, Qian-Min; Liu, Pei-qing; Qu, Qiu-Lin

    2015-01-01

    An experimental study is performed to investigate the local high-frequency perturbation effects of a synthetic jet injection on a flat-plate turbulent boundary layer. Parameters of the synthetic jet are designed to force a high-frequency perturbation from a thin spanwise slot in the wall. In the test locations downstream of the slot, it is found that skin-friction is reduced by the perturbation, which is languishingly evolved downstream of the slot with corresponding influence on the near-wall regeneration mechanism of turbulent structures. The downstream slot region is divided into two regions due to the influence strength of the movement of spanwise vortices generated by the high-frequency perturbation. Interestingly, the variable interval time average technique is found to be disturbed by the existence of the spanwise vortices’ motion, especially in the region close to the slot. Similar results are obtained from the analysis of the probability density functions of the velocity fluctuation time derivatives, which is another indirect technique for detecting the enhancement or attenuation of streamwise vortices. However, both methods have shown consistent results with the skin-friction reduction mechanism in the far-away slot region. The main purpose of this paper is to remind researchers to be aware of the probable influence of spanwise vortices’ motion in wall-bounded turbulence control. (paper)

  2. Controlled Electron Injection into Plasma Accelerators and SpaceCharge Estimates

    Energy Technology Data Exchange (ETDEWEB)

    Fubiani, Gwenael G.J. [Univ. of California, Berkeley, CA (United States)

    2005-09-01

    Plasma based accelerators are capable of producing electron sources which are ultra-compact (a few microns) and high energies (up to hundreds of MeVs) in much shorter distances than conventional accelerators. This is due to the large longitudinal electric field that can be excited without the limitation of breakdown as in RF structures.The characteristic scale length of the accelerating field is the plasma wavelength and for typical densities ranging from 1018 - 1019 cm-3, the accelerating fields and scale length can hence be on the order of 10-100GV/m and 10-40 μm, respectively. The production of quasimonoenergetic beams was recently obtained in a regime relying on self-trapping of background plasma electrons, using a single laser pulse for wakefield generation. In this dissertation, we study the controlled injection via the beating of two lasers (the pump laser pulse creating the plasma wave and a second beam being propagated in opposite direction) which induce a localized injection of background plasma electrons. The aim of this dissertation is to describe in detail the physics of optical injection using two lasers, the characteristics of the electron beams produced (the micrometer scale plasma wavelength can result in femtosecond and even attosecond bunches) as well as a concise estimate of the effects of space charge on the dynamics of an ultra-dense electron bunch with a large energy spread.

  3. The DFT investigations of the electron injection in hydrazone-based sensitizers

    KAUST Repository

    Al-Sehemi, Abdullah G.

    2012-03-01

    Quantum chemical calculations were carried out by using density functional theory and time-dependant density functional theory at B3LYP/6-31G(d) and TD-B3LYP/6-31G(d) level of theories. The absorption spectra have been computed with and without solvent. The calculated absorption spectra in ethanol, acetonitrile, and methanol are in good agreement with experimental evidences. The absorption spectra are red shifted compared to System1. On the basis of electron injection and electronic coupling constant, we have shed light on the nature of different sensitizers. The coplanarity between the benzene near anchoring group having LUMO and the bridge (N-N) is broken in System6 and System7 that would hamper the recombination process. The electron injection of System2-System10 is superior to System1. The highest electronic coupling constant has been observed for System6 that followed the System7 and System8. The light-harvesting efficiency of all the sensitizers enlarged in acetonitrile and ethanol. The long-range-corrected functional (LC-BLYP), Coulomb-attenuating method (CAM-B3LYP), and BH and HLYP functional underestimate the excitation energies while B3LYP is good to reproduce the experimental data. Moreover, we have investigated the effect of cyanoacetic acid as anchoring group on the electron injection. © 2012 Springer-Verlag.

  4. Enhanced acceleration of injected electrons in a laser-beat-wave-induced plasma channel.

    Science.gov (United States)

    Tochitsky, S Ya; Narang, R; Filip, C V; Musumeci, P; Clayton, C E; Yoder, R B; Marsh, K A; Rosenzweig, J B; Pellegrini, C; Joshi, C

    2004-03-05

    Enhanced energy gain of externally injected electrons by a approximately 3 cm long, high-gradient relativistic plasma wave (RPW) is demonstrated. Using a CO2 laser beat wave of duration longer than the ion motion time across the laser spot size, a laser self-guiding process is initiated in a plasma channel. Guiding compensates for ionization-induced defocusing (IID) creating a longer plasma, which extends the interaction length between electrons and the RPW. In contrast to a maximum energy gain of 10 MeV when IID is dominant, the electrons gain up to 38 MeV energy in a laser-beat-wave-induced plasma channel.

  5. Optical Absorption and Electron Injection of 4-(Cyanomethylbenzoic Acid Based Dyes: A DFT Study

    Directory of Open Access Journals (Sweden)

    Yuehua Zhang

    2015-01-01

    Full Text Available Density functional theory (DFT and time-dependent density functional theory (TDDFT calculations were carried out to study the ground state geometries, electronic structures, and absorption spectra of 4-(cyanomethylbenzoic acid based dyes (AG1 and AG2 used for dye-sensitized solar cells (DSSCs. The excited states properties and the thermodynamical parameters of electron injection were studied. The results showed that (a two dyes have uncoplanar structures along the donor unit and conjugated bridge space, (b two sensitizers exhibited intense absorption in the UV-Vis region, and (c the excited state oxidation potential was higher than the conduction band edge of TiO2 photoanode. As a result, a solar cell based on the 4-(cyanomethylbenzoic acid based dyes exhibited well photovoltaic performance. Furthermore, nine dyes were designed on the basis of AG1 and AG2 to improve optical response and electron injection.

  6. Breakdown assisted by a novel electron drift injection in the J-TEXT tokamak

    International Nuclear Information System (INIS)

    Wang, Nengchao; Jin, Hai; Zhuang, Ge; Ding, Yonghua; Pan, Yuan; Cen, Yishun; Chen, Zhipeng; Huang, Hai; Liu, Dequan; Rao, Bo; Zhang, Ming; Zou, Bichen

    2014-01-01

    A novel electron drift injection (EDI) system aiming to improve breakdown behavior has been designed and constructed on the Joint Texas EXperiment Tokamak Tokamak. Electrons emitted by the system undergo the E×B drift, ∇B drift and curvature drift in sequence in order to traverse the confining magnetic field. A local electrostatic well, generated by a concave-shaped plate biased more negative than the cathode, is introduced to interrupt the emitted electrons moving along the magnetic field line (in the parallel direction) in an attempt to bring an enhancement of the injection efficiency and depth. A series of experiments have demonstrated the feasibility of this method, and a penetration distance deeper than 9.5 cm is achieved. Notable breakdown improvements, including the reduction of breakdown delay and average loop voltage, are observed for discharges assisted by EDI. The lower limit of successfully ionized pressure is expanded

  7. Inorganic Substrates and Encapsulation Layers for Transient Electronics

    Science.gov (United States)

    2014-07-01

    transistors and diodes [5, 11, 12]. Solar cells , mechanical energy harvesters, strain and temperature sensors, photodetectors and other devices are...addition to PECVD based multiple layers, atomic layer deposition ( ALD ) provides a complementary strategy to reduce effects arising from defects. A...double layer of PECVD SiO2 (or PECVD Si3N4) and ALD SiO2 provides effective means of encapsulation, even with thin layers (Figure 1a, right

  8. Energetic Electron Acceleration and Injection During Dipolarization Events in Mercury's Magnetotail

    Science.gov (United States)

    Dewey, Ryan M.; Slavin, James A.; Raines, Jim M.; Baker, Daniel N.; Lawrence, David J.

    2017-12-01

    Energetic particle bursts associated with dipolarization events within Mercury's magnetosphere were first observed by Mariner 10. The events appear analogous to particle injections accompanying dipolarization events at Earth. The Energetic Particle Spectrometer (3 s resolution) aboard MESSENGER determined the particle bursts are composed entirely of electrons with energies ≳ 300 keV. Here we use the Gamma-Ray Spectrometer high-time-resolution (10 ms) energetic electron measurements to examine the relationship between energetic electron injections and magnetic field dipolarization in Mercury's magnetotail. Between March 2013 and April 2015, we identify 2,976 electron burst events within Mercury's magnetotail, 538 of which are closely associated with dipolarization events. These dipolarizations are detected on the basis of their rapid ( 2 s) increase in the northward component of the tail magnetic field (ΔBz 30 nT), which typically persists for 10 s. Similar to those at Earth, we find that these dipolarizations appear to be low-entropy, depleted flux tubes convecting planetward following the collapse of the inner magnetotail. We find that electrons experience brief, yet intense, betatron and Fermi acceleration during these dipolarizations, reaching energies 130 keV and contributing to nightside precipitation. Thermal protons experience only modest betatron acceleration. While only 25% of energetic electron events in Mercury's magnetotail are directly associated with dipolarization, the remaining events are consistent with the Near-Mercury Neutral Line model of magnetotail injection and eastward drift about Mercury, finding that electrons may participate in Shabansky-like closed drifts about the planet. Magnetotail dipolarization may be the dominant source of energetic electron acceleration in Mercury's magnetosphere.

  9. Near?Earth injection of MeV electrons associated with intense dipolarization electric fields: Van Allen Probes observations

    OpenAIRE

    Dai, Lei; Wang, Chi; Duan, Suping; He, Zhaohai; Wygant, John R.; Cattell, Cynthia A.; Tao, Xin; Su, Zhenpeng; Kletzing, Craig; Baker, Daniel N.; Li, Xinlin; Malaspina, David; Blake, J. Bernard; Fennell, Joseph; Claudepierre, Seth

    2015-01-01

    Abstract Substorms generally inject tens to hundreds of keV electrons, but intense substorm electric fields have been shown to inject MeV electrons as well. An intriguing question is whether such MeVelectron injections can populate the outer radiation belt. Here we present observations of a substorm injection of MeV electrons into the inner magnetosphere. In the premidnight sector at L ? 5.5, Van Allen Probes (Radiation Belt Storm Probes)?A observed a large dipolarization electric field (50?m...

  10. Injection of a single electron from static to moving quantum dots.

    Science.gov (United States)

    Bertrand, Benoit; Hermelin, Sylvain; Mortemousque, Pierre-André; Takada, Shintaro; Yamamoto, Michihisa; Tarucha, Seigo; Ludwig, Arne; Wieck, Andreas D; Bäuerle, Christopher; Meunier, Tristan

    2016-05-27

    We study the injection mechanism of a single electron from a static quantum dot into a moving quantum dot. The moving quantum dots are created with surface acoustic waves (SAWs) in a long depleted channel. We demonstrate that the injection process is characterized by an activation law with a threshold that depends on the SAW amplitude and on the dot-channel potential gradient. By sufficiently increasing the SAW modulation amplitude, we can reach a regime where the transfer has unity probability and is potentially adiabatic. This study points to the relevant regime to use moving dots in quantum information protocols.

  11. Picosecond stability of injection of parallel high-current pulsed electron beams

    Science.gov (United States)

    Yalandin, M. I.; Reutova, A. G.; Ul'Maskulov, M. R.; Sharypov, K. A.; Shpak, V. G.; Shunailov, S. A.; Klimov, A. I.; Rostov, V. V.; Mesyats, G. A.

    2009-09-01

    The stability of operation of parallel explosive-emission cathodes driven by a split high-voltage pulse with a subnanosecond leading front has been studied. It is established that, upon the training of graphite cathodes in vacuum with up to ˜104 pulses, the current pulse fronts of injected high-current electron beams exhibit a mutual temporal dispersion not exceeding ten picoseconds. The dynamics of this parameter during the training stage, the variation of the absolute spread, and the growth of a relative delay of the moments of beam injection have been investigated.

  12. Enhanced Performance of Dye-Sensitized Solar Cells with Nanostructure Graphene Electron Transfer Layer

    Directory of Open Access Journals (Sweden)

    Chih-Hung Hsu

    2014-01-01

    Full Text Available The utilization of nanostructure graphene thin films as electron transfer layer in dye-sensitized solar cells (DSSCs was demonstrated. The effect of a nanostructure graphene thin film in DSSC structure was examined. The nanostructure graphene thin films provides a great electron transfer channel for the photogenerated electrons from TiO2 to indium tin oxide (ITO glass. Obvious improvements in short-circuit current density of the DSSCs were observed by using the graphene electron transport layer modified photoelectrode. The graphene electron transport layer reduces effectively the back reaction in the interface between the ITO transparent conductive film and the electrolyte in the DSSC.

  13. Electronic structure and electron-phonon coupling in layered copper oxide superconductors

    International Nuclear Information System (INIS)

    Pickett, W.E.; Cohen, R.E.; Krakauer, H.

    1991-01-01

    Experimental data on the layered Cu-O superconductors seem more and more to reflect normal Fermi-liquid behavior and substantial correspondence with band structure predictions. Recent self-consistent, microscopic band theoretic calculations of the electronic structure, lattice instabilities, phonon frequencies, and electron-phonon coupling characteristics and strength for La 2 CuO 4 and YBa 2 Cu 3 O 7 are reviewed. A dominant feature of the coupling is a novel Madelung-like contribution which would be screened out in high density of states superconductors but survives in cuprates because of weak screening. Local density functional theory correctly predicts the instability of (La, Ba) 2 CuO 4 to both the low-temperature orthorhombic phase (below room temperature) and the lower-temperature tetragonal phase (below 50 K). (orig.)

  14. Near-Earth injection of MeV electrons associated with intense dipolarization electric fields: Van Allen Probes observations.

    Science.gov (United States)

    Dai, Lei; Wang, Chi; Duan, Suping; He, Zhaohai; Wygant, John R; Cattell, Cynthia A; Tao, Xin; Su, Zhenpeng; Kletzing, Craig; Baker, Daniel N; Li, Xinlin; Malaspina, David; Blake, J Bernard; Fennell, Joseph; Claudepierre, Seth; Turner, Drew L; Reeves, Geoffrey D; Funsten, Herbert O; Spence, Harlan E; Angelopoulos, Vassilis; Fruehauff, Dennis; Chen, Lunjin; Thaller, Scott; Breneman, Aaron; Tang, Xiangwei

    2015-08-16

    Substorms generally inject tens to hundreds of keV electrons, but intense substorm electric fields have been shown to inject MeV electrons as well. An intriguing question is whether such MeVelectron injections can populate the outer radiation belt. Here we present observations of a substorm injection of MeV electrons into the inner magnetosphere. In the premidnight sector at L ∼ 5.5, Van Allen Probes (Radiation Belt Storm Probes)-A observed a large dipolarization electric field (50 mV/m) over ∼40 s and a dispersionless injection of electrons up to ∼3 MeV. Pitch angle observations indicated betatron acceleration of MeV electrons at the dipolarization front. Corresponding signals of MeV electron injection were observed at LANL-GEO, THEMIS-D, and GOES at geosynchronous altitude. Through a series of dipolarizations, the injections increased the MeV electron phase space density by 1 order of magnitude in less than 3 h in the outer radiation belt ( L > 4.8). Our observations provide evidence that deep injections can supply significant MeV electrons.

  15. Ion and electron injection in ionosphere and magnetosphere. Application to the parallel electric field measurement in auroral zones

    International Nuclear Information System (INIS)

    Pirre, M.

    1982-11-01

    New methods of measuring parallel electric field in auroral zones are investigated in this thesis. In the studied methods, artificial injection of ions Li + and electrons from a spacecraf is used. Measurements obtained during the ARAKS experiment are also presented. The behaviour of the ionospheric plasma located few hundred meters from a 0,5A electron beam injected in ionosphere from a rocket is studied, together with the behaviour of a Cs plasma artificially injected from the same spacecraft [fr

  16. Electron temperature profile behaviour in TFTR during neutral beam injection and multiple pellet fuelling

    International Nuclear Information System (INIS)

    Taylor, G.; Fredrickson, E.D.; Grek, B.

    1989-01-01

    The electron temperature profiles on the Tokamak Fusion Test Reactor (TFTR) are determined by several diagnostics, including multi-point Thomson scattering and electron cyclotron emission measured with heterodyne radiometers and a Michelson interferometer. The electron temperature profiles are characterized by very high central temperatures (> 8 keV) and large Shafranov shifts (> 35 cm). The large Shafranov shifts suggest the necessity of mapping to magnetic flux surfaces when investigating the profile behaviour. During 1986, TFTR was operated with up to 20 MW of deuterium neutral beam injection (NBI) and a deuterium pellet injector. The electron temperature profile measurements were made on plasmas with 2.7 T p dia up to 2.2, 1x10 19 e 20 m -3 and 2.5 cyl e (R) to flux surfaces are investigated as well as the extent to which the electron temperature profile away from the core remains invariant to these perturbations. (author). 27 refs, 14 figs

  17. Optoelectronic devices, low temperature preparation methods, and improved electron transport layers

    KAUST Repository

    Eita, Mohamed S.

    2016-08-04

    An optoelectronic device such as a photovoltaic device which has at least one layer, such as an electron transport layer, which comprises a plurality of alternating, oppositely charged layers including metal oxide layers. The metal oxide can be zinc oxide. The plurality of layers can be prepared by layer-by-layer processing in which alternating layers are built up step-by-step due to electrostatic attraction. The efficiency of the device can be increased by this processing method compared to a comparable method like sputtering. The number of layers can be controlled to improve device efficiency. Aqueous solutions can be used which is environmentally friendly. Annealing can be avoided. A quantum dot layer can be used next to the metal oxide layer to form a quantum dot heterojunction solar device.

  18. Low-voltage organic electronics based on a gate-tunable injection barrier in vertical graphene-organic semiconductor heterostructures.

    Science.gov (United States)

    Hlaing, Htay; Kim, Chang-Hyun; Carta, Fabio; Nam, Chang-Yong; Barton, Rob A; Petrone, Nicholas; Hone, James; Kymissis, Ioannis

    2015-01-14

    The vertical integration of graphene with inorganic semiconductors, oxide semiconductors, and newly emerging layered materials has recently been demonstrated as a promising route toward novel electronic and optoelectronic devices. Here, we report organic thin film transistors based on vertical heterojunctions of graphene and organic semiconductors. In these thin heterostructure devices, current modulation is accomplished by tuning of the injection barriers at the semiconductor/graphene interface with the application of a gate voltage. N-channel devices fabricated with a thin layer of C60 show a room temperature on/off ratio >10(4) and current density of up to 44 mAcm(-2). Because of the ultrashort channel intrinsic to the vertical structure, the device is fully operational at a driving voltage of 200 mV. A complementary p-channel device is also investigated, and a logic inverter based on two complementary transistors is demonstrated. The vertical integration of graphene with organic semiconductors via simple, scalable, and low-temperature fabrication processes opens up new opportunities to realize flexible, transparent organic electronic, and optoelectronic devices.

  19. Cross correlation coefficients of turbulent boundary layer with micro-bubble injection

    International Nuclear Information System (INIS)

    Claudia del Carmen Gutierrez-Torres; Yassin A Hassan; Jose Alfredo Jimenez-Bernal

    2005-01-01

    Full text of publication follows: Injection of micro-bubbles within the turbulent boundary layer has been investigated for a several years as a method to achieve drag reduction. However, the physical mechanism of this phenomenon is not fully understood yet. Experiments in a channel flow for single phase (water) and two phase (water and micro-bubbles) flows under different void fraction conditions are reported for a Reynolds number of 5128. Particle Image Velocimetry technique is used to measure instantaneous velocity fields. Consequently the cross-correlation coefficient Ruv can be calculated along the stream-wise direction for various different y + positions and along the normal direction for the fluctuating components of the velocity obtained from the instantaneous velocity fields. The experiments were carried out in a rectangular acrylic channel, whose dimensions are 4.8 m length, 20.6 cm wide and 5.6 cm height. Water was driven trough the channel by gravity from a tank, which was located 3 m above the channel. Then, water was conducted to a lower tank; from which water was pumped to the upper thank forming a closed loop. Upper tank's water level was kept constant through the tests to ensure constant flow rate trough the channel. The velocity field in the x-y plane was obtained by particle image velocimetry (PIV) at 3.15 m downstream from the channel inlet. A Nd:YAG laser with a wavelength of 532 nm (green light) and power of 350 mJ per pulse is utilized. The particles used for seeding have a diameter that goes from 6-9 μm with a specific gravity almost identical to water s specific gravity. The laser light scattered from the seeding particles was recorded using a CCD Kodak Megaplus camera, Model ES 1.0, 1008 x 1018 pixels. The viewing area was 1.28 cm 2 and was located close to the channel wall. The system recorded 30 velocity fields per second. Each velocity field was obtained from a pair of consecutive images capturing the second image of the pair 1 ms after

  20. Mesoscopic Oxide Double Layer as Electron Specific Contact for Highly Efficient and UV Stable Perovskite Photovoltaics.

    Science.gov (United States)

    Tavakoli, Mohammad Mahdi; Giordano, Fabrizio; Zakeeruddin, Shaik Mohammed; Grätzel, Michael

    2018-03-15

    The solar to electric power conversion efficiency (PCE) of perovskite solar cells (PSCs) has recently reached 22.7%, exceeding that of competing thin film photovoltaics and the market leader polycrystalline silicon. Further augmentation of the PCE toward the Shockley-Queisser limit of 33.5% warrants suppression of radiationless carrier recombination by judicious engineering of the interface between the light harvesting perovskite and the charge carrier extraction layers. Here, we introduce a mesoscopic oxide double layer as electron selective contact consisting of a scaffold of TiO 2 nanoparticles covered by a thin film of SnO 2 , either in amorphous (a-SnO 2 ), crystalline (c-SnO 2 ), or nanocrystalline (quantum dot) form (SnO 2 -NC). We find that the band gap of a-SnO 2 is larger than that of the crystalline (tetragonal) polymorph leading to a corresponding lift in its conduction band edge energy which aligns it perfectly with the conduction band edge of both the triple cation perovskite and the TiO 2 scaffold. This enables very fast electron extraction from the light perovskite, suppressing the notorious hysteresis in the current-voltage ( J-V) curves and retarding nonradiative charge carrier recombination. As a result, we gain a remarkable 170 mV in open circuit photovoltage ( V oc ) by replacing the crystalline SnO 2 by an amorphous phase. Because of the quantum size effect, the band gap of our SnO 2 -NC particles is larger than that of bulk SnO 2 causing their conduction band edge to shift also to a higher energy thereby increasing the V oc . However, for SnO 2 -NC there remains a barrier for electron injection into the TiO 2 scaffold decreasing the fill factor of the device and lowering the PCE. Introducing the a-SnO 2 coated mp-TiO 2 scaffold as electron extraction layer not only increases the V oc and PEC of the solar cells but also render them resistant to UV light which forebodes well for outdoor deployment of these new PSC architectures.

  1. Relativistic electron-beam generation in plasma-filled diode and foilless injection into dense plasma

    Science.gov (United States)

    Burmasov, V. S.; Kandaurov, I. V.; Kruglyakov, E. P.; Meshkov, O. I.

    1994-05-01

    The traditional way of relativistic electron beam (REB) injection in the experiments on REB- plasma interaction is the injection through an anode foil that separates vacuum diode from plasma chamber. The presence of separating foil leads to the following: (1) replacement of destroyed foil is required after each shot, and (2) the beam angular characteristics making worse. A beam with low angular spread can be obtained from foilless diode placed into strong guiding magnetic field; the problem is how to avoid the diode shortening in the presence of a dense plasma from the interaction chamber. In the experiments on studying of Langmuir turbulence, carrying out on GOL-M device it becomes possible to avoid a separating foil and to obtain a foilless injection of REB into a dense (

  2. Flow injection fluorescence determination of dopamine using a photo induced electron transfer (PET) boronic acid derivative

    International Nuclear Information System (INIS)

    Ebru Seckin, Z.; Volkan, Muervet

    2005-01-01

    An automated flow injection analysis system was developed for the fluorometric determination of dopamine in pharmaceutical injections. The method is based on the quenching effect of dopamine on m-dansylaminophenyl boronic acid (DAPB) fluorescence due to the reverse photo induced electron transfer (PET) mechanism. Effects of pH and interfering species on the determination of dopamine were examined. Calibration for dopamine, based on quenching data, was linear in the concentration range of 1.0 x 10 -5 to 1.0 x 10 -4 M. Detection limit (3 s) of the method was found to be 3.7 x 10 -6 M. Relative standard deviation of 1.2% (n = 10) was obtained with 1.0 x 10 -5 M dopamine standard solution. The proposed method was applied successfully for the determination of dopamine in pharmaceutical injection sample. The sampling rate was determined as 24 samples per hour

  3. Potentiometric electronic tongue-flow injection analysis system for the monitoring of heavy metal biosorption processes.

    Science.gov (United States)

    Wilson, D; del Valle, M; Alegret, S; Valderrama, C; Florido, A

    2012-05-15

    An automated flow injection potentiometric (FIP) system with electronic tongue detection (ET) is used for the monitoring of biosorption processes of heavy metals on vegetable wastes. Grape stalk wastes are used as biosorbent to remove Cu(2+) ions in a fixed-bed column configuration. The ET is formed by a 5-sensor array with Cu(2+) and Ca(2+)-selective electrodes and electrodes with generic response to heavy-metals, plus an artificial neural network response model of the sensor's cross-response. The real-time monitoring of both the Cu(2+) and the cation exchanged and released (Ca(2+)) in the effluent solution is performed by using flow-injection potentiometric electronic tongue system. The coupling of the electronic tongue with automation features of the flow-injection system allows us to accurately characterize the Cu(2+) ion-biosorption process, through obtaining its breakthrough curves, and the profile of the Ca(2+) ion release. In parallel, fractions of the extract solution are analysed by spectroscopic techniques in order to validate the results obtained with the reported methodology. The sorption performance of grape stalks is also evaluated by means of well-established sorption models. Copyright © 2012 Elsevier B.V. All rights reserved.

  4. Dimensional crossover of electron weak localization in ZnO/TiOx stacked layers grown by atomic layer deposition

    Science.gov (United States)

    Saha, D.; Misra, P.; Bhartiya, S.; Gupta, M.; Joshi, M. P.; Kukreja, L. M.

    2016-01-01

    We report on the dimensional crossover of electron weak localization in ZnO/TiOx stacked layers having well-defined and spatially-localized Ti dopant profiles along film thickness. These films were grown by in situ incorporation of sub-monolayer TiOx on the growing ZnO film surface and subsequent overgrowth of thin conducting ZnO spacer layer using atomic layer deposition. Film thickness was varied in the range of ˜6-65 nm by vertically stacking different numbers (n = 1-7) of ZnO/TiOx layers of nearly identical dopant-profiles. The evolution of zero-field sheet resistance (R⊙) versus temperature with decreasing film thickness showed a metal to insulator transition. On the metallic side of the metal-insulator transition, R⊙(T) and magnetoresistance data were found to be well corroborated with the theoretical framework of electron weak localization in the diffusive transport regime. The temperature dependence of both R⊙ and inelastic scattering length provided strong evidence for a smooth crossover from 2D to 3D weak localization behaviour. Results of this study provide deeper insight into the electron transport in low-dimensional n-type ZnO/TiOx stacked layers which have potential applications in the field of transparent oxide electronics.

  5. Blue and white phosphorescent organic light emitting diode performance improvement by confining electrons and holes inside double emitting layers

    Energy Technology Data Exchange (ETDEWEB)

    Tsai, Yu-Sheng; Hong, Lin-Ann; Juang, Fuh-Shyang; Chen, Cheng-Yin

    2014-09-15

    In this research, complex emitting layers (EML) were fabricated using TCTA doping hole-transport material in the front half of a bipolar 26DCzPPy as well as PPT doping electron-transport material in the back half of 26DCzPPy. Blue dopant FIrpic was also mixed inside the complex emitting layer to produce a highly efficient blue phosphorescent organic light emitting diode (OLED). The hole and electron injection and carrier recombination rate were effectively increased. The fabricated complex emitting layers exhibited current efficiency of 42 cd/A and power efficiency of 30 lm/W when the luminance was 1000 cd/m{sup 2}, driving voltage was 4.4 V, and current density was 2.4 mA/cm{sup 2}. A white OLED component was then manufactured by doping red dopant [Os(bpftz){sub 2}(PPh{sub 2}Me){sub 2}] (Os) in proper locations. When the Os dopant was doped in between the complex emitting layers, excitons were effectively confined within, increasing the recombination rate and therefore reducing the color shift. The resulting Commission Internationale de L’Eclairage (CIE) coordinates shifted from 4 to 10 V is (Δx=−0.04, Δy=+0.01). The component had a current efficiency of 35.7 cd/A, a power efficiency of 24 lm/W, driving voltage of 4.6 V and a CIE{sub x,y} of (0.31,0.35) at a luminance of 1000 cd/m{sup 2}, with a maximum luminance of 15,600 cd/m{sup 2} at 10 V. Attaching an outcoupling enhancement film was applied to increase the luminance efficiency to 30 lm/W. - Highlights: • Used the complex double emitting layers. • Respectively doped hole and electron transport material in the bipolar host. • Electrons and holes are effectively confined within EMLs to produce excitons.

  6. Simultaneous Improvement of Hole and Electron Injection in Organic Field-effect Transistors by Conjugated Polymer-wrapped Carbon Nanotube Interlayers

    Science.gov (United States)

    Lee, Seung-Hoon; Khim, Dongyoon; Xu, Yong; Kim, Juhwan; Park, Won-Tae; Kim, Dong-Yu; Noh, Yong-Young

    2015-05-01

    Efficient charge injection is critical for flexible organic electronic devices such as organic light-emitting diodes (OLEDs) and field-effect transistors (OFETs). Here, we investigated conjugated polymer-wrapped semiconducting single-walled carbon nanotubes (s-SWNTs) as solution-processable charge-injection layers in ambipolar organic field-effect transistors with poly(thienylenevinylene-co-phthalimide)s. The interlayers were prepared using poly(9,9-di-n-octylfluorene-alt-benzothiadiazole) (F8BT) or poly(9,9-dioctylfluorene) (PFO) to wrap s-SWNTs. In the contact-limited ambipolar OFETs, the interlayer led to significantly lower contact resistance (Rc) and increased mobilities for both holes and electrons. The resulting PTVPhI-Eh OFETs with PFO-wrapped s-SWNT interlayers showed very well-balanced ambipolar transport properties with a hole mobility of 0.5 cm2V-1S-1 and an electron mobility of 0.5 cm2V-1S-1 in linear regime. In addition, the chirality of s-SWNTs and kind of wrapping of conjugated polymers are not critical to improving charge-injection properties. We found that the improvements caused by the interlayer were due to the better charge injection at the metal/organic semiconductor contact interface and the increase in the charge concentration through a detailed examination of charge transport with low-temperature measurements. Finally, we successfully demonstrated complementary ambipolar inverters incorporating the interlayers without excessive patterning.

  7. Investigation of electronic quality of electrodeposited cadmium sulphide layers from thiourea precursor for use in large area electronics

    Energy Technology Data Exchange (ETDEWEB)

    Ojo, A.A., E-mail: chartell2006@yahoo.com; Dharmadasa, I.M.

    2016-09-01

    CdS layers used in thin film solar cells and other electronic devices are usually grown by wet chemical methods using CdCl{sub 2} as the Cadmium source and either Na{sub 2}S{sub 2}O{sub 3}, NH{sub 4}S{sub 2}O{sub 3} or NH{sub 2}CSNH{sub 2} as Sulphur sources. Obviously, one of the sulphur precursors should produce more suitable CdS layers required to give the highest performing devices. This can only be achieved by comprehensive experimental work on growth and characterisation of CdS layers from the above mentioned sulphur sources. This paper presents the results observed on CdS layers grown by electrodepositing using two electrode configuration and thiourea as the sulphur precursor. X-ray diffraction (XRD), Raman spectroscopy, optical absorption, scanning electron microscopy (SEM), energy-dispersive X-ray analysis (EDX) and photoelectrochemical (PEC) cell methods have been used to characterise the material properties. In order to test and study the electronic device quality of the layers, ohmic and rectifying contacts were fabricated on the electroplated layers. Schottky barriers, formed on the layers were also compared with previously reported work on Chemical Bath Deposited CBD-CdS layers and bulk single crystals of CdS. Comparatively, Schottky diodes fabricated on electroplated CdS layers using two-electrode system and thiourea precursor exhibit excellent electronic properties suitable for electronic devices such as thin film solar panels and large area display devices. - Highlights: • Precipitate-free electrodeposition of CdS is achievable using Thiourea precursor. • Electrodeposition of CdS using 2-electrode configuration. • The electrodeposited CdS shows excellent electronic properties. • Exploration of the effect of heat treatment temperature and heat treatment duration.

  8. plasma modes behaviors and electron injection influence in an audio-ultrasonic air gas discharge

    International Nuclear Information System (INIS)

    Ragheb, M.S.; Haleem, N.A.

    2010-01-01

    the main purpose of this study is to investigate the favorable conditions for the production of plasma particle acceleration in an audio-ultrasonic air gas discharge of 20 cm long and 34 mm diameter.it is found that according to the applied conditions the formed plasma changes its behavior and overtakes diverse modes of different characteristics. the pressure, the voltage, and the frequency applied to the plasma determine its proper state. both experimental data collection and optical observations are introduced to clarify and to put in evidence the present plasma facts. the distribution of the electrons density along the plasma tube draws in average the electric field distribution of the ionization waves. in addition, the plasma is studied with and without electrons injection in order to investigate its influence . it is found that the electron injection decreases the plasma intensity and the plasma temperature, while it increases the discharge current. in turn, the decrease of the plasma temperature decreases the plasma oscillations and enhances the plasma instability. on the other hand,the enhancement of the plasma instability performs good conditions for electron acceleration. as a result, the qualified mode for particles acceleration is attained and its conditions are retrieved and defined for that purpose.

  9. Injection of electrons by colliding laser pulses in a laser wakefield accelerator

    CERN Document Server

    Hansson, Martin; Ekerfelt, Henrik; Persson, Anna; Lundh, Olle

    2016-01-01

    To improve the stability and reproducibility of laser wakefield accelerators and to allow for future applications, controlling the injection of electrons is of great importance. This allows us to control the amount of charge in the beams of accelerated electrons and final energy of the electrons. Results are presented from a recent experiment on controlled injection using the scheme of colliding pulses and performed using the Lund multi-terawatt laser. Each laser pulse is split into two parts close to the interaction point. The main pulse is focused on a 2 mm diameter gas jet to drive a nonlinear plasma wave below threshold for self-trapping. The second pulse, containing only a fraction of the total laser energy, is focused to collide with the main pulse in the gas jet under an angle of 150°. Beams of accelerated electrons with low divergence and small energy spread are produced using this set-up. Control over the amount of accelerated charge is achieved by rotating the plane of polarization of the second p...

  10. Atmospheric Signatures and Effects of Space-based Relativistic Electron Beam Injection

    Science.gov (United States)

    Marshall, R. A.; Sanchez, E. R.; Kero, A.; Turunen, E. S.; Marsh, D. R.

    2017-12-01

    Future relativistic electron beam injection experiments have the potential to provide groundbreaking insights into the physics of wave-particle interactions and beam-neutral interactions, relevant to space physics and to fundamental plasma physics. However, these experiments are only useful if their signatures can be detected. In this work, we use a physics-based forward modeling framework to investigate the observable signatures of a relativistic beam interacting with the upper atmosphere. The modeling framework is based around the Electron Precipitation Monte Carlo (EPMC) model, used to simulate electron precipitation in the upper atmosphere. That model is coupled to physics-based models of i) optical emission production; ii) bremsstrahlung photon production and propagation; iii) D-region ion chemistry; and iv) VLF wave propagation in the Earth-ionosphere waveguide. Using these modeling tools, we predict the optical, X-ray, chemical, radar, and VLF signatures of a realistic beam injection, based on recent space-based accelerator designs. In particular, we inject a beam pulse of 10 mA for a duration of 500 μs at an energy of 1 MeV, providing a total pulse energy of 5 J. We further investigate variations in these parameters, in particular the total energy and the electron energy. Our modeling shows that for this 5 J pulse injection at 1 MeV electron energy, the optical signal is easily detectable from the ground in common emission bands, but the X-ray signal is likely too weak to be seen from either balloons or LEO orbiting spacecraft. We further predict the optical signal-to-noise ratio that would be expected in different optical systems. Chemical signatures such as changes to NOx and HOx concentrations are too short-lived to be detectable; however our modeling provides a valuable estimate of the total chemical response. Electron density perturbations should be easily measurable from ground-based high-power radars and via VLF subionospheric remote sensing

  11. Electronic spin transport and spin precession in single graphene layers at room temperature

    NARCIS (Netherlands)

    Tombros, Nikolaos; Jozsa, Csaba; Popinciuc, Mihaita; Jonkman, Harry T.; van Wees, Bart J.

    2007-01-01

    Electronic transport in single or a few layers of graphene is the subject of intense interest at present. The specific band structure of graphene, with its unique valley structure and Dirac neutrality point separating hole states from electron states, has led to the observation of new electronic

  12. Dissipation of post-disruption runaway electron plateaus by shattered pellet injection in DIII-D

    Science.gov (United States)

    Shiraki, D.; Commaux, N.; Baylor, L. R.; Cooper, C. M.; Eidietis, N. W.; Paz-Soldan, C.; Hollmann, E. M.; Moyer, R. A.

    2016-10-01

    Effective runaway electron (RE) mitigation strategies are essential for protecting ITER from the potential damage of a first wall strike. In DIII-D, shattered pellet injection (SPI) with large Ne pellets demonstrates the dissipation of post-disruption RE plateaus by collisions with high-Z impurities, while equivalently sized D2 pellets lead to a reduction of the impurity content of the background plasma, reducing RE dissipation. Varying the relative quantities of Ne /D2 in mixed species pellets shows that the effect of D2 may be dominant in determining the RE/pellet interaction. Compared with injection of the same quantity of Ne by massive gas injection, SPI achieves a similar initial RE current decay rate, but residual RE current remains after SPI. This may be due to the effects of a small quantity of D2 (used as a ``shell'' for firing of the Ne pellets) displacing high-Z impurities. These results will help guide the optimization of injection schemes and pellet compositions for the RE mitigation system in ITER. Work supported by the U.S. DOE under DE-FC02-04ER54698.

  13. New injection scheme using a pulsed quadrupole magnet in electron storage rings

    Directory of Open Access Journals (Sweden)

    Kentaro Harada

    2007-12-01

    Full Text Available We demonstrated a new injection scheme using a single pulsed quadrupole magnet (PQM with no pulsed local bump at the Photon Factory Advanced Ring (PF-AR in High Energy Accelerator Research Organization (KEK. The scheme employs the basic property of a quadrupole magnet, that the field at the center is zero, and nonzero elsewhere. The amplitude of coherent betatron oscillation of the injected beam is effectively reduced by the PQM; then, the injected beam is captured into the ring without largely affecting the already stored beam. In order to investigate the performance of the scheme with a real beam, we built the PQM providing a higher field gradient over 3  T/m and a shorter pulse width of 2.4  μs, which is twice the revolution period of the PF-AR. After the field measurements confirmed the PQM specifications, we installed it into the ring. Then, we conducted the experiment using a real beam and consequently succeeded in storing the beam current of more than 60 mA at the PF-AR. This is the first successful beam injection using a single PQM in electron storage rings.

  14. New Magnetospheric Substorm Injection Monitor: Image Electron Spectrometer On Board a Chinese Navigation IGSO Satellite

    Science.gov (United States)

    Zong, Qiugang; Wang, Yongfu; Zou, Hong; Wang, Linghua; Rankin, Robert; Zhang, Xiaoxin

    2018-02-01

    Substorm injections are one of the most dynamic processes in Earth's magnetosphere and have global consequences and broad implications for space weather modeling. They can be monitored using energetic electron detectors on geosynchronous satellites. The Imaging Electron Spectrometer (IES) on board a Chinese navigation satellite, launched on 16 October 2015 into an inclined geosynchronous satellite orbit (IGSO), provides the first energetic electron measurement in IGSO orbit to the best of our knowledge. The IES was developed by Peking University and is named hereafter as BD-IES. Using a pin-hole technique, the BD-IES instrument measures 50-600 keV incident electrons in eight energy channels from nine directions covering a range of 180° in polar angle. Data collection by the BD-IES instrument have recently passed the 1 year mark, which reflects a successful milestone for the mission. The innermost and outermost signatures of substorm injection at L 6 and 12 have been observed by the BD-IES with a high L shell spatial coverage, complementary to the existing missions such as the Van Allen Probes that covers the range below L 6. There are another two BD-IES instruments to be installed in the coming Chinese Sun-synchronous and geosynchronous satellites, respectively. Such a configuration will provide a unique opportunity to investigate inward and outward radial propagation of the substorm injection region simultaneously at high and low L shells. It will further elucidate potential mechanisms for the particle energization and transport, two of the most important topics in magnetospheric dynamics.

  15. Electron beam manipulation, injection and acceleration in plasma wakefield accelerators by optically generated plasma density spikes

    Energy Technology Data Exchange (ETDEWEB)

    Wittig, Georg; Karger, Oliver S.; Knetsch, Alexander [Institute of Experimental Physics, University of Hamburg, 22761 Hamburg (Germany); Xi, Yunfeng; Deng, Aihua; Rosenzweig, James B. [Particle Beam Physics Laboratory, UCLA, Los Angeles, CA 90095 (United States); Bruhwiler, David L. [RadiaSoft LLC, Boulder, CO 80304 (United States); RadiaBeam Technologies LLC (United States); Smith, Jonathan [Tech-X UK Ltd, Daresbury, Cheshire WA4 4FS (United Kingdom); Sheng, Zheng-Ming; Jaroszynski, Dino A.; Manahan, Grace G. [Physics Department, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom); Hidding, Bernhard [Institute of Experimental Physics, University of Hamburg, 22761 Hamburg (Germany); Physics Department, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom)

    2016-09-01

    We discuss considerations regarding a novel and robust scheme for optically triggered electron bunch generation in plasma wakefield accelerators [1]. In this technique, a transversely propagating focused laser pulse ignites a quasi-stationary plasma column before the arrival of the plasma wake. This localized plasma density enhancement or optical “plasma torch” distorts the blowout during the arrival of the electron drive bunch and modifies the electron trajectories, resulting in controlled injection. By changing the gas density, and the laser pulse parameters such as beam waist and intensity, and by moving the focal point of the laser pulse, the shape of the plasma torch, and therefore the generated trailing beam, can be tuned easily. The proposed method is much more flexible and faster in generating gas density transitions when compared to hydrodynamics-based methods, and it accommodates experimentalists needs as it is a purely optical process and straightforward to implement.

  16. Quantifying the growth of individual graphene layers by in situ environmental transmission electron microscopy

    DEFF Research Database (Denmark)

    Kling, Jens; Hansen, Thomas Willum; Wagner, Jakob Birkedal

    2016-01-01

    The growth dynamics of layered carbon is studied by means of in situ transmission electron microscopy in order to obtain a deeper insight into the growth by chemical vapor deposition, which at present is the technique of choice for growing layered carbon. In situ growth of layered carbon structures...... on nickel using acetylene as carbon precursor gas is studied in the electron microscope at various gas pressures. By following the growth of individual graphene layers on the Ni surface, local growth rates are determined as a function of precursor pressure. Two growth regimes are identified, an initial...

  17. Ultrafast Non-Thermal Electron Dynamics in Single Layer Graphene

    Directory of Open Access Journals (Sweden)

    Novoselov K.S.

    2013-03-01

    Full Text Available We study the ultrafast dynamics of non-thermal electron relaxation in graphene upon impulsive excitation. The 10-fs resolution two color pump-probe allows us to unveil the non-equilibrium electron gas decay at early times.

  18. Quasi-Monoenergetic Dense and Uniform Electron Bunch Generation from Laser Driven Double-Layer Thin Films

    Science.gov (United States)

    Wang, C.; Roycroft, R.; McCary, E.; Meadows, A.; Blakeney, J.; Serratto, K.; Kuk, D.; Chester, C.; Gao, L.; Fu, H.; Yan, X. Q.; Schreiber, J.; Pomerantz, I.; Bernstein, A.; Quevedo, H.; Dyer, G.; Gaul, E.; Ditmire, T.; Gautier, D. C.; Fernandez, J.; Hegelich, B. M.

    2014-10-01

    We demonstrate that dense, uniform quasi-monoenergetic relativistic electron bunches can be generated from the interaction of a high-intensity laser pulse with a double-layer thin film target. The first layer of the target is a freestanding, nanometer-scale, diamond-like carbon production layer. The second layer is a thin plastic reflection layer which reflects the drive-laser pulse, but allows electrons to pass through. Although no electron bunch is generated from the second layer alone, by adding it behind the first layer we obtained a quasi-monoenergetic bunch along the laser axis, 35 times denser than a bunch from the single layer target. Comparing the angular distribution of the electron spectra from a double-layer target with that of a single-layer target, we observed an increase of the electron cutoff energy at larger angles, which improves the uniformity of created electron bunches.

  19. The model of beam-plasma discharge in the rocket environment during an electron beam injection in the ionosphere

    International Nuclear Information System (INIS)

    Mishin, E.V.; Ruzhin, Yu.Ya.

    1980-01-01

    The model of beam-plasma discharge in the rocket environment during electron beam injection in the ionosphere is constructed. The discharge plasma density dependence on the neutral gas concentration and the beam parameters is found

  20. Operating Organic Electronics via Aqueous Electric Double Layers

    OpenAIRE

    Toss, Henrik

    2015-01-01

    The field of organic electronics emerged in the 1970s with the discovery of conducting polymers. With the introduction of plastics as conductors and semiconductors came many new possibilities both in production and function of electronic devices. Polymers can often be processed from solution and their softness provides both the possibility of working on flexible substrates, and various advantages in interfacing with other soft materials, e.g. biological samples and specimens. Conducting polym...

  1. Simulation of runaway electron generation during plasma shutdown by impurity injection

    Energy Technology Data Exchange (ETDEWEB)

    Feher, Tamas

    2011-03-15

    Disruptions are dangerous instabilities in tokamaks that should be avoided or mitigated. One possible disruption mitigation method is to inject impurities into the plasma to shut it down in a controlled way. Runaway Electrons (REs) can be generated after the plasma is cooled down by the impurities and these electrons can damage the tokamak. In this work a simulation code is developed to investigate different disruption mitigation scenarios. The response of the bulk plasma, more precisely the temperature evolution of electrons, deuterium and impurity ions are described by energy balance equations in a 1D cylindrical plasma model. The induction and resistive diffusion of electric field is calculated. RE generation rates are used to calculate the runaway current. The Dreicer, hot-tail and avalanche effect is taken into account and a simple model for RE losses is also included. RE generation is studied in JET-like plasmas during pellet injection. Carbon pellets cause effective cooling but these scenarios are prone to runaway generation. A mixture of argon and deuterium gas could be used for safe shutdown without RE generation. In ITER the hot-tail RE generation process becomes important, and the simulation is therefore extended to take this into account. Shutdown scenarios with different concentration of neon and argon impurities were tested in ITER-like plasmas. To simplify the problem the impurity injection into the plasma is not modeled in these cases, only the response of the bulk plasma. The avalanche process cannot be suppressed in a simple way and would produce high runaway current. It can be avoided if some runaway loss phenomenon is included in the simulations, like diffusion due to magnetic perturbations

  2. Charge injection in an LED with a hybrid composite as the emissive layer

    International Nuclear Information System (INIS)

    Gozzi, G.; Chinaglia, D.L.; Schmidt, T.F.; Oliveira, O.N.

    2011-01-01

    Understanding and controlling charge transport are crucial to achieve optimized organic devices, including light emitting diodes. In this study, we investigate the charge injection in devices made with a hybrid composite (HC) containing Zn 2 SiO 4 :Mn (ZSP:Mn) in a polymeric blend consisting of poly(o-methoxyaniline) (POMA) and poly(vinylidene co-trifluorethylene) P(VDFTrFE), with the architecture ITO/HC/metallic electrode (ME). Charge injection was found to depend mainly on the POMA semiconducting phase. For ITO/HC/Au, an Ohmic junction was observed because the work function of ITO is close to that of Au, which also matches the energy levels of HC. Holes are injected through the HC/Au junction, as the highest occupied molecular orbital (HOMO) level of POMA matches the Fermi level of Au. The impedance spectroscopy data for the ITO/HC/ME devices were analyzed with a theoretical model where charge injection was assumed to occur via hopping with a distribution of potential energy barriers. The average hopping distance was estimated as 5.5 A and only the device with the Al electrode had the current limited by the interface mechanism (charge injection). For ITO/HC/Cu and ITO/HC/Au devices the limiting factor for the charge transport was the bulk resistance of the samples, in spite of the existence of a small interface energy barrier. The disorder parameter was 0.18 and 0.19 for the HC/Cu and HC/Al interfaces, respectively, which arises from the disordered nature of the hybrid material. The combination of the Cole-Cole model and the Miller-Abrahams function are a good approach to describe charge a.c. injection processes in disordered materials.

  3. A linear current injection generator for the generation of electrons in a nuclear reactor

    International Nuclear Information System (INIS)

    Kar, Moutushi; Thakur, Satish Kumar; Agiwal, Mamta; Sholapurwala, Zarir H.

    2011-01-01

    While, operating a nuclear reactor it is absolutely necessary for generating a chain reaction or fission. A chain reaction can be initiated by bombardment of a heavy nucleus with fast moving particles. One of the common methods used for generating a fast moving particle is injecting a very high voltage into a particle accelerator and accelerating high energy particle beams using machine like cyclotron, synchrotron, linear accelerators i.e. linac and similar equipment. These equipment generated and run by several high voltage applications like simple high voltage DC systems and supplies or pulsed electron systems. (author)

  4. Rapid global response of the electron temperature during pellet injection on Tore Supra

    International Nuclear Information System (INIS)

    Talvard, M.

    1993-06-01

    During pellet injection in the Tore Supra tokamak, a very quick electron temperature drop in the whole plasma column has been observed by means of a fast acquisition ECE Fabry-Perot interferometers system. The time delay of the temperature drop between plasma edge and center is less than 20 microseconds, corresponding to a propagation velocity of the order of 25 km/s, much larger than both the pellet velocity and the ordinary diffusion velocity. A model of neutral atom diffusion, in which charge-exchange process plays a key role, is proposed to explain such phenomena

  5. Pulse radiolysis based on a femtosecond electron beam and a femtosecond laser light with double-pulse injection technique

    International Nuclear Information System (INIS)

    Yang Jinfeng; Kondoh, Takafumi; Kozawa, Takahiro; Yoshida, Youichi; Tagawa, Seiichi

    2006-01-01

    A new pulse radiolysis system based on a femtosecond electron beam and a femtosecond laser light with oblique double-pulse injection was developed for studying ultrafast chemical kinetics and primary processes of radiation chemistry. The time resolution of 5.2 ps was obtained by measuring transient absorption kinetics of hydrated electrons in water. The optical density of hydrated electrons was measured as a function of the electron charge. The data indicate that the double-laser-pulse injection technique was a powerful tool for observing the transient absorptions with a good signal to noise ratio in pulse radiolysis

  6. On the gyro resonance electron-whistler interaction in transition layers of near-earth plasma

    International Nuclear Information System (INIS)

    Erokhin, N.S.; Zol'nikova, N.N.; Mikhajlovskaya, L.A.

    1996-01-01

    Gyro resonance interaction of electrons with low amplitude triggered whistler in the transition layers of the ionospheric and magnetospheric plasma that correspond to the blurred jumps of the magnetic field and plasma concentration was studied

  7. Generalized expressions for variations in critical frequencies, electron densities and altitudes of the ionospheric layers

    International Nuclear Information System (INIS)

    Njau, E.C.

    1990-12-01

    We develop generalized mathematical expressions for time and space variations of peak electron densities of the ionospheric D, E, F1 and F2 layers as well as corresponding variations in the altitudes of the electron density peaks in each of these layers. On the basis of the Chapman characteristics of the E and F1 layers and other techniques, a generalized expression is developed for the electron density height profile of each of the four ionospheric layers. Consequently a generalized mathematical expression is developed for the entire electron density height profile of the whole ionosphere as a function of time, latitude and longitude. The latter mathematical expression may be used to compute or predict ionospheric parameters associated with ratio and satellite communications. Finally we show that some well documented equations on ionospheric parameters are simplified (or approximated) versions of some of our mathematical expressions. (author). 29 refs

  8. Color stable white phosphorescent organic light emitting diodes with red emissive electron transport layer

    Energy Technology Data Exchange (ETDEWEB)

    Wook Kim, Jin; Yoo, Seung Il; Sung Kang, Jin [Department of Green Energy & Semiconductor Engineering, Hoseo University, Asan 336-795 (Korea, Republic of); Eun Lee, Song; Kwan Kim, Young [Department of Information Display, Hongik University, Seoul 121-791 (Korea, Republic of); Hwa Yu, Hyeong; Turak, Ayse [Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Young Kim, Woo, E-mail: wykim@hoseo.edu [Department of Green Energy & Semiconductor Engineering, Hoseo University, Asan 336-795 (Korea, Republic of); Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)

    2015-06-28

    We analyzed the performance of multi-emissive white phosphorescent organic light-emitting diodes (PHOLEDs) in relation to various red emitting sites of hole and electron transport layers (HTL and ETL). The shift of the recombination zone producing stable white emission in PHOLEDs was utilized as luminance was increased with red emission in its electron transport layer. Multi-emissive white PHOLEDs including the red light emitting electron transport layer yielded maximum external quantum efficiency of 17.4% with CIE color coordinates (−0.030, +0.001) shifting only from 1000 to 10 000 cd/m{sup 2}. Additionally, we observed a reduction of energy loss in the white PHOLED via Ir(piq){sub 3} as phosphorescent red dopant in electron transport layer.

  9. Multi-layer WSe2 field effect transistor with improved carrier-injection contact by using oxygen plasma treatment

    Science.gov (United States)

    Kang, Won-Mook; Lee, SungTae; Cho, In-Tak; Park, Tae Hyung; Shin, Hyeonwoo; Hwang, Cheol Seong; Lee, Changhee; Park, Byung-Gook; Lee, Jong-Ho

    2018-02-01

    This paper investigates the effect of an oxygen (O2) plasma treatment on multi-layer tungsten diselenide (WSe2) field-effect transistor (FET) by forming tungsten trioxide (WO3) layers. Palladium (Pd), which is known to form an Ohmic contact with WSe2, is used for the source and drain (S/D) contact electrodes as a control group for metal variables. And then, Nickel (Ni), which is thought to form a Schottky contact with WSe2 experimentally, is used as an experimental group. For both cases of the control group and the experimental group, the electrical characteristics including drain current (ID), on/off ratio (ION/IOFF), subthreshold swing (SS) and field effect mobility (μeff) are analyzed according to the presence or absence of WO3. In case of adopting the WO3 contact layer between the WSe2 and the Ni for the S/D contact electrode, we observe a remarkable improvement in ID, ION/IOFF, μeff, and SS compared to the case without the WO3 contact layer. The analyzed electrical characteristics show that an efficient hole-injection contact was achieved for the multi-layer WSe2 FET by the O2 plasma treatment, which leads to the formation of an Ohmic-like contact at an electrode/WSe2 interface.

  10. Synergetic Influences of Mixed-Host Emitting Layer Structures and Hole Injection Layers on Efficiency and Lifetime of Simplified Phosphorescent Organic Light-Emitting Diodes.

    Science.gov (United States)

    Han, Tae-Hee; Kim, Young-Hoon; Kim, Myung Hwan; Song, Wonjun; Lee, Tae-Woo

    2016-03-09

    We used various nondestructive analyses to investigate various host material systems in the emitting layer (EML) of simple-structured, green phosphorescent organic light-emitting diodes (OLEDs) to clarify how the host systems affect its luminous efficiency (LE) and operational stability. An OLED that has a unipolar single-host EML with conventional poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) ( PSS) showed high operating voltage, low LE (∼26.6 cd/A, 13.7 lm/W), and short lifetime (∼4.4 h @ 1000 cd/m(2)). However, the combined use of a gradient mixed-host EML and a molecularly controlled HIL that has increased surface work function (WF) remarkably decreased operating voltage and improved LE (∼68.7 cd/A, 77.0 lm/W) and lifetime (∼70.7 h @ 1000 cd/m(2)). Accumulated charges at the injecting interfaces and formation of a narrow recombination zone close to the interfaces are the major factors that accelerate degradation of charge injection/transport and electroluminescent properties of OLEDs, so achievement of simple-structured OLEDs with high efficiency and long lifetime requires facilitating charge injection and balanced transport into the EML and distributing charge carriers and excitons in EML.

  11. Comparison of histopathological characteristics of polyacrylate polyalcohol copolymer with dextranomer/hyaluronic acid after injection beneath the bladder mucosa layer: a rabbit model.

    Science.gov (United States)

    Kajbafzadeh, Abdol-Mohammad; Sabetkish, Shabnam; Khorramirouz, Reza; Sabetkish, Nastaran

    2017-05-01

    To compare short- and long-term local tissue reaction of polyacrylate polyalcohol copolymer (PPC) with dextranomer/hyaluronic acid (DHA) in rabbits. Eight healthy New Zealand rabbits were randomly divided into two groups. In group I (control group), DHA was injected just beneath the mucosal layer of the bladder wall, while PPC was injected in group II. Subcutaneous injection of both bulking agents was also performed in nude mice. Histological evaluations with leukocyte common antibody (LCA), CD68, CD31, and CD34 were conducted on biopsies 1 and 6 months postoperatively. Scanning electron microscopy (SEM) and MTT assay were also performed for these two bulking agents. SEM images revealed larger particle size of PPC. LCA and CD68 staining was significantly higher in group II as compared with group I in both short- and long-term follow-ups. However, in groups I and II, expression of CD31 (101 ± 0.5 vs. 92 ± 0.25, p > 0.05) and CD34 (115 ± 0.75 vs. 103 ± 0.5, p > 0.05) was not significantly different in long-term follow-up. Remarkably, severe fibrosis was observed in group II as compared to mild fibrosis in group I one month after injection. The results of in vivo application of these bulking agents in nude mice were in accordance with the results obtained from rabbit model. MTT assay revealed that cell proliferation was significantly higher in the presence of DHA as compared with PPC. Severe inflammation and fibrosis in PPC may be due to continued foreign body reaction, presence of alcohol polymers, or larger particle sizes.

  12. Numerical simulation of plasma of large-dimensions produced by injecting electron beam into air

    International Nuclear Information System (INIS)

    Li Hong; Su Tie; Ouyang Liang; Wang Huihui; Bai Xiaoyan; Chen Zhipeng; Liu Wandong

    2006-01-01

    A four-species 1-D hybrid numerical model was set up to simulate the process of formation of large-dimension plasma produced by injecting electron beams into air. It showed that plasma of the order of 0.5 m in length and 10 12 cm -3 in density can be produced by an electron beam with the energy of 140 keV and flux of 50 mA/cm 2 . The effect of space charge associated with the beam on the beam propagation and related process vanishes soon after the plasma is produced. The beam flux is directly relevant to the plasma density, but the beam energy affects both the dimensions and the density of produced plasma. (authors)

  13. Measurements of the critical power for self-injection of electrons in a laser wakefield accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Froula, D H; Clayton, C E; Doppner, T; Fonseca, R A; Marsh, K A; Barty, C J; Divol, L; Glenzer, S H; Joshi, C; Lu, W; Martins, S F; Michel, P; Mori, W; Palastro, J P; Pollock, B B; Pak, A; Ralph, J E; Ross, J S; Siders, C; Silva, L O; Wang, T

    2009-06-02

    A laser wakefield acceleration study has been performed in the matched, self-guided, blow-out regime where a 10 J, 60 fs laser produced 720 {+-} 50 MeV quasi-monoenergetic electrons with a divergence of {Delta}{theta} = 2.85 {+-} 0.15 mRad. While maintaining a nearly constant plasma density (3 x 10{sup 18} cm{sup -3}), a linear electron energy gain was measured from 100 MeV to 700 MeV when the plasma length was scaled from 3 mm to 8 mm. Absolute charge measurements indicate that self-injection occurs when P/P{sub cr} > 4 and saturates around 100 pC for P/P{sub cr} > 12. The results are compared with both analytical scalings and full 3D particle-in-cell simulations.

  14. Cyano-substituted oligo(p-phenylene vinylene) single-crystal with balanced hole and electron injection and transport for ambipolar field-effect transistors.

    Science.gov (United States)

    Deng, Jian; Tang, Jia; Xu, Yuanxiang; Liu, Liqun; Wang, Yan; Xie, Zengqi; Ma, Yuguang

    2015-02-07

    High and balanced hole and electron mobilities were achieved in OFETs based on the high photoluminescence of a 1,4-bis(2-cyano-2-phenylethenyl)benzene single-crystal with symmetric electrodes. For electron and hole, the operation voltage in the OFETs based on symmetric gold electrodes was 30 and -20 V, respectively. The accumulation threshold voltage is low enough for the OFETs to operate in an ambipolar model with the source/drain voltage (Vds) around 50 V despite the high injection barrier. The highest electron and hole mobility was 0.745 cm(2) V(-1) s(-1) and 0.239 cm(2) V(-1) s(-1), and the current density reached 90.7 and 27.4 A cm(-2), respectively with an assumed 10 nm accumulation layer. The high mobility comes from the strong π-π interactions. In addition, the highly ordered hydrogen bonding matrix may create an efficient route to pump the charge to the inner layer which can improve the injection ability.

  15. Quantum dot layer-by-layer assemblies as signal amplification labels for ultrasensitive electronic detection of uropathogens.

    Science.gov (United States)

    Xiang, Yun; Zhang, Haixia; Jiang, Bingying; Chai, Yaqin; Yuan, Ruo

    2011-06-01

    The preparation and use of a new class of signal amplification label, quantum dot (QD) layer-by-layer (LBL) assembled polystyrene microsphere composite, for amplified ultrasensitive electronic detection of uropathogen-specific DNA sequences is described. The target DNA is sandwiched between the capture probes immobilized on the magnetic beads and the signaling probes conjugated to the QD LBL assembled polystyrene beads. Because of the dramatic signal amplification by the numerous QDs involved in each single DNA binding event, subfemtomolar level detection of uropathogen-specific DNA sequences is achieved, which makes our strategy among the most sensitive electronic approach for nucleic acid-based monitoring of pathogens. Our signal amplified detection scheme could be readily expanded to monitor other important biomolecules (e.g., proteins, peptides, amino acids, cells, etc.) in ultralow levels and thus holds great potential for early diagnosis of disease biomarkers.

  16. The growth and electronic structure of azobenzene-based functional molecules on layered crystals

    International Nuclear Information System (INIS)

    Iwicki, J; Ludwig, E; Buck, J; Kalläne, M; Kipp, L; Rossnagel, K; Köhler, F; Herges, R

    2012-01-01

    In situ ultraviolet photoelectron spectroscopy is used to study the growth of ultrathin films of azobenzene-based functional molecules (azobenzene, Disperse Orange 3 and a triazatriangulenium platform with an attached functional azo-group) on the layered metal TiTe 2 and on the layered semiconductor HfS 2 at liquid nitrogen temperatures. Effects of intermolecular interactions, of the substrate electronic structure, and of the thermal energy of the sublimated molecules on the growth process and on the adsorbate electronic structure are identified and discussed. A weak adsorbate-substrate interaction is particularly observed for the layered semiconducting substrate, holding the promise of efficient molecular photoswitching.

  17. Electronic structure, transport, and collective effects in molecular layered systems

    Directory of Open Access Journals (Sweden)

    Torsten Hahn

    2017-10-01

    Full Text Available The great potential of organic heterostructures for organic device applications is exemplified by the targeted engineering of the electronic properties of phthalocyanine-based systems. The transport properties of two different phthalocyanine systems, a pure copper phthalocyanine (CoPc and a flourinated copper phthalocyanine–manganese phthalocyanine (F16CoPc/MnPc heterostructure, are investigated by means of density functional theory (DFT and the non-equilibrium Green’s function (NEGF approach. Furthermore, a master-equation-based approach is used to include electronic correlations beyond the mean-field-type approximation of DFT. We describe the essential theoretical tools to obtain the parameters needed for the master equation from DFT results. Finally, an interacting molecular monolayer is considered within a master-equation approach.

  18. Fuelling regulation with Electronic fuel injection for small spark ignition engine using Fuzzy Logic

    International Nuclear Information System (INIS)

    Shah, S.R.; Sahir, M.H.

    2004-01-01

    The use of Electronic Control systems in automotive applications gives the design engineer greater control over various processes compared with mechanical methods Examples of such electronic control systems are Electronic Fuel Injection (EFI), Traction Control Systems (TCS) and Anti-lock Braking Systems (ABS). In addition, the development of inexpensive and fast microcontrollers has remarkably improve, performance of passive and active safety systems of automobiles, without causing excessive increase in prices of vehicles -a favourable factor from the consumer's perspective. This paper deals with a possible electronic aid for the improvement of power control in a motorcycle. Controlling the speed and power of a motorcycle is difficult; especially on bumpy and uneven terrain. In this paper, the development of an EPI system is discussed, incorporating artificial intelligence to regulate the fuel supplied to the engine. It would minimize wheel slippage and jerky and sudden acceleration which potentially dangerous. It would also reduce production of large quantities of pollutant like hydrocarbons and carbon monoxide. Fuel consumption would also improve during stop-and-go traffic. (author)

  19. The concept of "compartment allergy": prilocaine injected into different skin layers

    OpenAIRE

    Wobser, Marion; Gaigl, Zeno; Trautmann, Axel

    2011-01-01

    Abstract We herein present a patient with delayed-type allergic hypersensitivity against prilocaine leading to spreading eczematous dermatitis after subcutaneous injections for local anesthesia with prilocaine. Prilocaine allergy was proven by positive skin testing and subcutaneous provocation, whereas the evaluation of other local anesthetics - among them lidocaine, articaine and mepivacaine - did not exhibit any evidence for cross-reactivity. Interestingly, our patient repeatedly tolerated ...

  20. A simple model for atomic layer doped field-effect transistor (ALD-FET) electronic states

    International Nuclear Information System (INIS)

    Mora R, M.E.; Gaggero S, L.M.

    1998-01-01

    We propose a simple potential model based on the Thomas-Fermi approximation to reproduce the main properties of the electronic structure of an atomic layer doped field effect transistor. Preliminary numerical results for a Si-based ALD-FET justify why bound electronic states are not observed in the experiment. (Author)

  1. Consideration of R2Fe14B layers as targets with polarized electrons

    NARCIS (Netherlands)

    Hoogduin, JM; van Klinken, J

    Thin layers of R2Fe14B magnets (R = rare earth) can be magnetized perpendicularly to their planes and can be used as targets of polarized electrons with polarization of approximate to 4% to facilitate Moller/Bhabha and Compton polarimetry of electrons/positrons and photons, respectively. (C) 1998

  2. Numerical simulation of the processes of small-diameter high-current electron beam shaping and injection

    CERN Document Server

    Gordeev, V S; Myskov, G A

    2001-01-01

    With the aid of BEAM 25 program there was carried out the numerical simulation of the non-stationary process of shaping a small-diameter (<= 20mm) high-current hollow electron beam in a diode with magnetic insulation,as well as of the process of beam injection into the accelerating LIA track. The diode configuration for the purpose of eliminating the leakage of electron flux to the anode surface was update. Presented are the results of calculation of the injected beam characteristics (amplitude-time parameters of a current pulse, space-angle distributions of electrons etc.) depending on diode geometric parameters.

  3. Tomographic Imaging of Water Injection and Withdrawal in PEMFC Gas Diffusion Layers

    Energy Technology Data Exchange (ETDEWEB)

    McGill U; Gostick, J. T.; Gunterman, H. P.; Weber, A. Z.; Newman, J. S.; Kienitz, B. L.; MacDowell, A. A.

    2010-06-25

    X-ray computed tomography was used to visualize the water configurations inside gas diffusion layers for various applied capillary pressures, corresponding to both water invasion and withdrawal. A specialized sample holder was developed to allow capillary pressure control on the small-scale samples required. Tests were performed on GDL specimens with and without hydrophobic treatments.

  4. Transport of energetic electrons in a magnetically expanding helicon double layer plasma

    International Nuclear Information System (INIS)

    Takahashi, Kazunori; Charles, Christine; Boswell, Rod; Cox, Wes; Hatakeyama, Rikizo

    2009-01-01

    Peripheral magnetic field lines extending from the plasma source into the diffusion chamber are found to separate two regions of Maxwellian electron energy probability functions: the central, ion-beam containing region with an electron temperature of 5 eV, and region near the chamber walls with electrons at 3 eV. Along the peripheral field lines a bi-Maxwellian population with a hot tail at 9 eV is shown to both originate from electrons in the source traveling downstream across the double layer and correspond to a local maximum in ion and electron densities.

  5. Simulation of the backscattered electron intensity of multi layer structure for the explanation of secondary electron contrast

    Energy Technology Data Exchange (ETDEWEB)

    Sulyok, A.; Toth, A.L. [Research Institute for Technical Physics and Materials Science, Budapest H-1525, P.O. Box 49 (Hungary); Zommer, L., E-mail: lzommer@ichf.edu.pl [Polish Academy of Sciences, Institute of Physical Chemistry, ul. Kasprzaka 44/52, 01-224 Warsaw (Poland); Menyhard, M. [Research Institute for Technical Physics and Materials Science, Budapest H-1525, P.O. Box 49 (Hungary); Jablonski, A. [Polish Academy of Sciences, Institute of Physical Chemistry, ul. Kasprzaka 44/52, 01-224 Warsaw (Poland)

    2013-01-15

    The intensities of the secondary electrons (SE) and of the backscattered electrons (BSE) at energy 100 eV have been measured on a Ni/C/Ni/C/Ni/C/(Si substrate) multilayer structure by exciting it with primary electrons of 5, 2.5 and 1.25 keV energies. It has been found that both intensities similarly vary while thinning the specimen. The difference as small as 4 nm in the underlying layer thicknesses resulted in visible intensity change. Utilizing this intensity change, the thickness difference of neighboring regions could be revealed from the SE image. No simple phenomenological model was found to interpret the change of intensity, thus the intensity of the BSE electrons has been calculated by means of a newly developed Monte Carlo simulation. This code also considers the secondary electron generation and transport through the solid. The calculated and measured intensities agree well supporting the validity of the model. -- Highlights: Black-Right-Pointing-Pointer similarities in scanning electron microscopy and backscattered electrons were used. Black-Right-Pointing-Pointer MC algorithm for sample made from metal and semiconductor layers was workout. Black-Right-Pointing-Pointer electron backscattering depth dependence resembles Auger depth profiling curves.

  6. Structural damage at the Si/SiO2 interface resulting from electron injection in metal-oxide-semiconductor devices

    Science.gov (United States)

    Mikawa, R. E.; Lenahan, P. M.

    1985-03-01

    With electron spin resonance, we have observed structural changes in metal-oxide-semiconductor structures resulting from the photoemisson of electrons from the silicon into the oxide. A trivalent silicon defect at the Si/SiO2 interface, termed Pb, is shown to be responsible for the interface states induced by electron injection. We find that these Pb centers are amphoteric interface state defects.

  7. Ultrafast Electron Injection from Photoexcited Perovskite CsPbI3QDs into TiO2Nanoparticles with Injection Efficiency near 99.

    Science.gov (United States)

    Liu, Feng; Zhang, Yaohong; Ding, Chao; Toyoda, Taro; Ogomi, Yuhei; Ripolles, Teresa S; Hayase, Shuzi; Minemoto, Takashi; Yoshino, Kenji; Dai, Songyuan; Shen, Qing

    2018-01-18

    Photoexcited electron injection dynamics from CsPbI 3 quantum dots (QDs) to wide gap metal oxides are studied by transient absorption spectroscopy. Experimental results show under a low excitation intensity that ∼99% of the photoexcited electrons in CsPbI 3 QDs can be injected into TiO 2 with a size-dependent rate ranging from 1.30 × 10 10 to 2.10 × 10 10 s -1 , which is also ∼2.5 times faster than that in the case of ZnO. A demonstration QD-sensitized solar cell based on a CsPbI 3 /TiO 2 electrode is fabricated that delivers a power conversion efficiency of 5%.

  8. Nonlinear electron acoustic structures generated on the high-potential side of a double layer

    Directory of Open Access Journals (Sweden)

    R. Pottelette

    2009-04-01

    Full Text Available High-time resolution measurements of the electron distribution function performed in the auroral upward current region reveals a large asymmetry between the low- and high-potential sides of a double-layer. The latter side is characterized by a large enhancement of a locally trapped electron population which corresponds to a significant part (~up to 30% of the total electron density. As compared to the background hot electron population, this trapped component has a very cold temperature in the direction parallel to the static magnetic field. Accordingly, the differential drift between the trapped and background hot electron populations generates high frequency electron acoustic waves in a direction quasi-parallel to the magnetic field. The density of the trapped electron population can be deduced from the frequency where the electron acoustic spectrum maximizes. In the auroral midcavity region, the electron acoustic waves may be modulated by an additional turbulence generated in the ion acoustic range thanks to the presence of a pre-accelerated ion beam located on the high-potential side of the double layer. Electron holes characterized by bipolar pulses in the electric field are sometimes detected in correlation with these electron acoustic wave packets.

  9. Coal-water slurry spray characteristics of an electronically-controlled accumulator fuel injection system

    Science.gov (United States)

    Caton, J. A.; Payne, S. E.; Terracina, D. P.; Kihm, K. D.

    Experiments have been complete to characterize coal-water slurry sprays from a electronically-controlled accumulator fuel injection system of diesel engine. The sprays were injected into a pressurized chamber equipped with windows. High speed movies, fuel pressures and needle lifts were obtained as a function of time, orifice diameter, coal loading, gas density in the chamber, and accumulator fuel pressure. For the base conditions 50% (by mass) coal loading, 0.4 mm diameter nozzle hole, coal-water slurry pressure of 82 MPa (12,000 psi), and a chamber density of 25 kg/m(exp 3), the break-up time was 0.30 ms. An empirical correlation for both spray tip penetration and initial jet velocity was developed. For the conditions of this study, the spray tip penetration and initial jet velocity were 15% greater for coal-water slurry than for diesel fuel or water. Cone angles of the sprays were dependent on the operating conditions and fluid, as well as the time and locations of the measurement. The time-averaged cone angle for the base case conditions was 13.6 degrees. Results of this study and the correlation are specific to the tested coal-water slurry and are not general for other coal-water slurry fuels.

  10. Detecting Solenoid Valve Deterioration in In-Use Electronic Diesel Fuel Injection Control Systems

    Directory of Open Access Journals (Sweden)

    Chyuan-Yow Tseng

    2010-07-01

    Full Text Available The diesel engine is the main power source for most agricultural vehicles. The control of diesel engine emissions is an important global issue. Fuel injection control systems directly affect fuel efficiency and emissions of diesel engines. Deterioration faults, such as rack deformation, solenoid valve failure, and rack-travel sensor malfunction, are possibly in the fuel injection module of electronic diesel control (EDC systems. Among these faults, solenoid valve failure is most likely to occur for in-use diesel engines. According to the previous studies, this failure is a result of the wear of the plunger and sleeve, based on a long period of usage, lubricant degradation, or engine overheating. Due to the difficulty in identifying solenoid valve deterioration, this study focuses on developing a sensor identification algorithm that can clearly classify the usability of the solenoid valve, without disassembling the fuel pump of an EDC system for in-use agricultural vehicles. A diagnostic algorithm is proposed, including a feedback controller, a parameter identifier, a linear variable differential transformer (LVDT sensor, and a neural network classifier. Experimental results show that the proposed algorithm can accurately identify the usability of solenoid valves.

  11. Detecting solenoid valve deterioration in in-use electronic diesel fuel injection control systems.

    Science.gov (United States)

    Tsai, Hsun-Heng; Tseng, Chyuan-Yow

    2010-01-01

    The diesel engine is the main power source for most agricultural vehicles. The control of diesel engine emissions is an important global issue. Fuel injection control systems directly affect fuel efficiency and emissions of diesel engines. Deterioration faults, such as rack deformation, solenoid valve failure, and rack-travel sensor malfunction, are possibly in the fuel injection module of electronic diesel control (EDC) systems. Among these faults, solenoid valve failure is most likely to occur for in-use diesel engines. According to the previous studies, this failure is a result of the wear of the plunger and sleeve, based on a long period of usage, lubricant degradation, or engine overheating. Due to the difficulty in identifying solenoid valve deterioration, this study focuses on developing a sensor identification algorithm that can clearly classify the usability of the solenoid valve, without disassembling the fuel pump of an EDC system for in-use agricultural vehicles. A diagnostic algorithm is proposed, including a feedback controller, a parameter identifier, a linear variable differential transformer (LVDT) sensor, and a neural network classifier. Experimental results show that the proposed algorithm can accurately identify the usability of solenoid valves.

  12. Electron energy distribution function in the divertor region of the COMPASS tokamak during neutral beam injection heating

    Science.gov (United States)

    Hasan, E.; Dimitrova, M.; Havlicek, J.; Mitošinková, K.; Stöckel, J.; Varju, J.; Popov, Tsv K.; Komm, M.; Dejarnac, R.; Hacek, P.; Panek, R.; the COMPASS Team

    2018-02-01

    This paper presents the results from swept probe measurements in the divertor region of the COMPASS tokamak in D-shaped, L-mode discharges, with toroidal magnetic field BT = 1.15 T, plasma current Ip = 180 kA and line-average electron densities varying from 2 to 8×1019 m-3. Using neutral beam injection heating, the electron energy distribution function is studied before and during the application of the beam. The current-voltage characteristics data are processed using the first-derivative probe technique. This technique allows one to evaluate the plasma potential and the real electron energy distribution function (respectively, the electron temperatures and densities). At the low average electron density of 2×1019 m-3, the electron energy distribution function is bi-Maxwellian with a low-energy electron population with temperatures 4-6 eV and a high-energy electron group 12-25 eV. As the line-average electron density is increased, the electron temperatures decrease. At line-average electron densities above 7×1019 m-3, the electron energy distribution function is found to be Maxwellian with a temperature of 6-8.5 eV. The effect of the neutral beam injection heating power in the divertor region is also studied.

  13. Hafnium metallocene compounds used as cathode interfacial layers for enhanced electron transfer in organic solar cells

    Science.gov (United States)

    2012-01-01

    We have used hafnium metallocene compounds as cathode interfacial layers for organic solar cells [OSCs]. A metallocene compound consists of a transition metal and two cyclopentadienyl ligands coordinated in a sandwich structure. For the fabrication of the OSCs, poly[3,4-ethylenedioxythiophene]:poly(styrene sulfonate), poly(3-hexylthiophene-2,5-diyl) + [6,6]-phenyl C61 butyric acid methyl ester, bis-(ethylcyclopentadienyl)hafnium(IV) dichloride, and aluminum were deposited as a hole transport layer, an active layer, a cathode interfacial layer, and a cathode, respectively. The hafnium metallocene compound cathode interfacial layer improved the performance of OSCs compared to that of OSCs without the interfacial layer. The current density-voltage characteristics of OSCs with an interfacial layer thickness of 0.7 nm and of those without an interfacial layer showed power conversion efficiency [PCE] values of 2.96% and 2.34%, respectively, under an illumination condition of 100 mW/cm2 (AM 1.5). It is thought that a cathode interfacial layer of an appropriate thickness enhances the electron transfer between the active layer and the cathode, and thus increases the PCE of the OSCs. PMID:22230259

  14. Hafnium metallocene compounds used as cathode interfacial layers for enhanced electron transfer in organic solar cells

    Science.gov (United States)

    Park, Keunhee; Oh, Seungsik; Jung, Donggeun; Chae, Heeyeop; Kim, Hyoungsub; Boo, Jin-Hyo

    2012-01-01

    We have used hafnium metallocene compounds as cathode interfacial layers for organic solar cells [OSCs]. A metallocene compound consists of a transition metal and two cyclopentadienyl ligands coordinated in a sandwich structure. For the fabrication of the OSCs, poly[3,4-ethylenedioxythiophene]:poly(styrene sulfonate), poly(3-hexylthiophene-2,5-diyl) + [6, 6]-phenyl C61 butyric acid methyl ester, bis-(ethylcyclopentadienyl)hafnium(IV) dichloride, and aluminum were deposited as a hole transport layer, an active layer, a cathode interfacial layer, and a cathode, respectively. The hafnium metallocene compound cathode interfacial layer improved the performance of OSCs compared to that of OSCs without the interfacial layer. The current density-voltage characteristics of OSCs with an interfacial layer thickness of 0.7 nm and of those without an interfacial layer showed power conversion efficiency [PCE] values of 2.96% and 2.34%, respectively, under an illumination condition of 100 mW/cm2 (AM 1.5). It is thought that a cathode interfacial layer of an appropriate thickness enhances the electron transfer between the active layer and the cathode, and thus increases the PCE of the OSCs.

  15. The efficiency enhancement of single-layer solution-processed blue phosphorescent organic light emitting diodes by hole injection layer modification

    International Nuclear Information System (INIS)

    Yeoh, K H; Talik, N A; Whitcher, T J; Ng, C Y B; Woon, K L

    2014-01-01

    Poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) PEDOT : PSS is extensively used as a hole injection layer (HIL) in solution-processed organic light emitting diodes (OLEDs). The high work function of a HIL is crucial in improving OLED efficiency. The work function of PEDOT : PSS is usually around 5.1–5.3 eV. By adding perfluorinated ionomer (PFI), the work function of PEDOT : PSS has been reported to reach as high as 5.95 eV. We investigated the effects of PFI-modified PEDOT : PSS in a single-layer solution-processed blue phosphorescent OLED (PHOLED). We observed that high concentrations of a PFI in PEDOT : PSS has detrimental effects on the device efficiency due to the low conductivity of the PFI. Using this approach, blue PHOLEDs with efficiencies of 9.4 lm W −1 (18.2 cd A −1 ) and 7.9 lm W −1 (20.4 cd A −1 ) at 100 cd m −2 and 1000 cd m −2 , respectively, were demonstrated. (paper)

  16. Lead Halide Perovskites as Charge Generation Layers for Electron Mobility Measurement in Organic Semiconductors.

    Science.gov (United States)

    Love, John A; Feuerstein, Markus; Wolff, Christian M; Facchetti, Antonio; Neher, Dieter

    2017-12-06

    Hybrid lead halide perovskites are introduced as charge generation layers (CGLs) for the accurate determination of electron mobilities in thin organic semiconductors. Such hybrid perovskites have become a widely studied photovoltaic material in their own right, for their high efficiencies, ease of processing from solution, strong absorption, and efficient photogeneration of charge. Time-of-flight (ToF) measurements on bilayer samples consisting of the perovskite CGL and an organic semiconductor layer of different thickness are shown to be determined by the carrier motion through the organic material, consistent with the much higher charge carrier mobility in the perovskite. Together with the efficient photon-to-electron conversion in the perovskite, this high mobility imbalance enables electron-only mobility measurement on relatively thin application-relevant organic films, which would not be possible with traditional ToF measurements. This architecture enables electron-selective mobility measurements in single components as well as bulk-heterojunction films as demonstrated in the prototypical polymer/fullerene blends. To further demonstrate the potential of this approach, electron mobilities were measured as a function of electric field and temperature in an only 127 nm thick layer of a prototypical electron-transporting perylene diimide-based polymer, and found to be consistent with an exponential trap distribution of ca. 60 meV. Our study furthermore highlights the importance of high mobility charge transporting layers when designing perovskite solar cells.

  17. Theoretical-Numerical Analysis of Boundary-Layer Stability with Combined Injection and Acoustic Absorptive Coating

    Science.gov (United States)

    2014-01-01

    stabilization of the boundary-layer flow. The foregoing model assumes that: • The number of pores per the instability wavelength ( porn ) is large...calculated ( ) porn x using the wavelength distribution ( )xλ∗ for the most unstable (vs. frequency) waves. Figure 45 shows that 100porn > downstream...instability wavelength ( ) porn x . Distribution A: Approved for public release; distribution is unlimited. 37 0.2 0.4 0.6 0.8 1.0 0 2 4 6 8 10 R e

  18. Energy and angular distribution of electrons after transmission of thick layers

    International Nuclear Information System (INIS)

    Kreyling, H.

    1975-01-01

    In this work, the behaviour of electrons going through material-layers is studied. For a layer-thickness where the theories of multiple-scattering are no longer valid, a Monte-Carlo-method is presented for the calculation of energy distributions as a function of scattering-angle. Plastic-scintillator-material (NE 102 A produced by Nuclear Enterprises Ltd.) was bombarded by electrons with energies between 0.5 and 2.0 MeV and the energy-distributions of the electrons, scatterd in the layer, were measured as a function of the scattering-angle. With the aid of the Monte-Carlo-method developed in this paper, energy distributions were calculated as a function of scattering-angle for the two absorber materials aluminium (single-element material) and NE 102 A (chemical compound of C, N, H, O). (orig./WL) [de

  19. A double-layer based model of ion confinement in electron cyclotron resonance ion source

    Energy Technology Data Exchange (ETDEWEB)

    Mascali, D., E-mail: davidmascali@lns.infn.it; Neri, L.; Celona, L.; Castro, G.; Gammino, S.; Ciavola, G. [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali del Sud, via S. Sofia 62, 95123 Catania (Italy); Torrisi, G. [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali del Sud, via S. Sofia 62, 95123 Catania (Italy); Università Mediterranea di Reggio Calabria, Dipartimento di Ingegneria dell’Informazione, delle Infrastrutture e dell’Energia Sostenibile, Via Graziella, I-89100 Reggio Calabria (Italy); Sorbello, G. [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali del Sud, via S. Sofia 62, 95123 Catania (Italy); Università degli Studi di Catania, Dipartimento di Ingegneria Elettrica Elettronica ed Informatica, Viale Andrea Doria 6, 95125 Catania (Italy)

    2014-02-15

    The paper proposes a new model of ion confinement in ECRIS, which can be easily generalized to any magnetic configuration characterized by closed magnetic surfaces. Traditionally, ion confinement in B-min configurations is ascribed to a negative potential dip due to superhot electrons, adiabatically confined by the magneto-static field. However, kinetic simulations including RF heating affected by cavity modes structures indicate that high energy electrons populate just a thin slab overlapping the ECR layer, while their density drops down of more than one order of magnitude outside. Ions, instead, diffuse across the electron layer due to their high collisionality. This is the proper physical condition to establish a double-layer (DL) configuration which self-consistently originates a potential barrier; this “barrier” confines the ions inside the plasma core surrounded by the ECR surface. The paper will describe a simplified ion confinement model based on plasma density non-homogeneity and DL formation.

  20. Stability, structural and electronic properties of benzene molecule adsorbed on free standing Au layer

    Energy Technology Data Exchange (ETDEWEB)

    Katoch, Neha, E-mail: nehakatoch2@gmail.com; Kapoor, Pooja; Sharma, Munish; Ahluwalia, P. K. [Physics Department, Himachal Pradesh University, Shimla, Himachal Pradesh, India 171005 (India); Kumar, Ashok [Center for Physical Sciences, School of Basic and Applied Sciences, Central University of Punjab, Bathinda, India, 151001 (India)

    2016-05-23

    We report stability and electronic properties of benzene molecule adsorbed on the Au atomic layer within the framework of density function theory (DFT). Horizontal configuration of benzene on the top site of Au monolayer prefers energetically over other studied configurations. On the adsorption of benzene, the ballistic conductance of Au monolayer is found to decrease from 4G{sub 0} to 2G{sub 0} suggesting its applications for the fabrications of organic sensor devices based on the Au atomic layers.

  1. Top layer's thickness dependence on total electron-yield X-ray standing-wave

    International Nuclear Information System (INIS)

    Ejima, Takeo; Yamazaki, Atsushi; Banse, Takanori; Hatano, Tadashi

    2005-01-01

    A Mo single-layer film with a stepwise thickness distribution was fabricated on the same Mo/Si reflection multilayer film. Total electron-yield X-ray standing-wave (TEY-XSW) spectra of the aperiodic multilayer were measured with reflection spectra. The peak positions of the standing waves in the TEY-XSW spectra changed as the film thickness of the top Mo-layer increased

  2. Solution-processed barium salts as charge injection layers for high performance N-channel organic field-effect transistors.

    Science.gov (United States)

    Kim, Nam-Koo; Khim, Dongyoon; Xu, Yong; Lee, Seung-Hoon; Kang, Minji; Kim, Jihong; Facchetti, Antonio; Noh, Yong-Young; Kim, Dong-Yu

    2014-06-25

    N-channel organic field-effect transistors (OFETs) have generally shown lower field-effect mobilities (μFET) than their p-type counterparts. One of the reasons is the energetic misalignment between the work function (WF) of commonly used charge injection electrode, i.e. gold (Au), and the lowest unoccupied molecular orbital (LUMO) of n-channel electron-transporting organic semiconductors. Here, we report barium salts as solution-processed interlayers, to improve the electron-injection and/or hole-blocking in top-gate/bottom-contact n-channel OFETs, based on poly{[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-dithiophene)} (P(NDI2OD-T2)) and phenyl-C61-butyric acid methyl ester (PC61BM). Two different barium salts, barium hydroxide (Ba(OH)2) and barium chloride (Ba(Cl)2), are employed as the ultrathin interlayer (∼2 nm); and they effectively tune the WF of Au from 4.9 eV, to as low as 3.5 eV. The resulting n-channel OFETs exhibit significantly improved μFET, approaching 2.6 cm(2)/(V s) and 0.1 cm(2)/(V s) for the best P(NDI2OD-T2) and PC61BM devices, respectively, with Ba(OH)2 as interlayer.

  3. Diverse and tunable electronic structures of single-layer metal phosphorus trichalcogenides for photocatalytic water splitting

    International Nuclear Information System (INIS)

    Liu, Jian; Li, Xi-Bo; Wang, Da; Liu, Li-Min; Lau, Woon-Ming; Peng, Ping

    2014-01-01

    The family of bulk metal phosphorus trichalcogenides (APX 3 , A = M II , M 0.5 I M 0.5 III ; X = S, Se; M I , M II , and M III represent Group-I, Group-II, and Group-III metals, respectively) has attracted great attentions because such materials not only own magnetic and ferroelectric properties, but also exhibit excellent properties in hydrogen storage and lithium battery because of the layered structures. Many layered materials have been exfoliated into two-dimensional (2D) materials, and they show distinct electronic properties compared with their bulks. Here we present a systematical study of single-layer metal phosphorus trichalcogenides by density functional theory calculations. The results show that the single layer metal phosphorus trichalcogenides have very low formation energies, which indicates that the exfoliation of single layer APX 3 should not be difficult. The family of single layer metal phosphorus trichalcogenides exhibits a large range of band gaps from 1.77 to 3.94 eV, and the electronic structures are greatly affected by the metal or the chalcogenide atoms. The calculated band edges of metal phosphorus trichalcogenides further reveal that single-layer ZnPSe 3 , CdPSe 3 , Ag 0.5 Sc 0.5 PSe 3 , and Ag 0.5 In 0.5 PX 3 (X = S and Se) have both suitable band gaps for visible-light driving and sufficient over-potentials for water splitting. More fascinatingly, single-layer Ag 0.5 Sc 0.5 PSe 3 is a direct band gap semiconductor, and the calculated optical absorption further convinces that such materials own outstanding properties for light absorption. Such results demonstrate that the single layer metal phosphorus trichalcogenides own high stability, versatile electronic properties, and high optical absorption, thus such materials have great chances to be high efficient photocatalysts for water-splitting

  4. Properties and parameters of the electron beam injected into the mirror magnetic trap of a plasma accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Andreev, V. V., E-mail: temple18@mail.ru; Novitsky, A. A.; Vinnichenko, L. A.; Umnov, A. M.; Ndong, D. O. [Peoples’ Friendship University of Russia (Russian Federation)

    2016-03-15

    The parameters of the injector of an axial plasma beam injected into a plasma accelerator operating on the basis of gyroresonance acceleration of electrons in the reverse magnetic field are determined. The trapping of the beam electrons into the regime of gyroresonance acceleration is numerically simulated by the particle- in-cell method. The optimal time of axial injection of the beam into a magnetic mirror trap is determined. The beam parameters satisfying the condition of efficient particle trapping into the gyromagnetic autoresonance regime are found.

  5. Superluminescence from an optically pumped molecular tunneling junction by injection of plasmon induced hot electrons

    Directory of Open Access Journals (Sweden)

    Kai Braun

    2015-05-01

    Full Text Available Here, we demonstrate a bias-driven superluminescent point light-source based on an optically pumped molecular junction (gold substrate/self-assembled molecular monolayer/gold tip of a scanning tunneling microscope, operating at ambient conditions and providing almost three orders of magnitude higher electron-to-photon conversion efficiency than electroluminescence induced by inelastic tunneling without optical pumping. A positive, steadily increasing bias voltage induces a step-like rise of the Stokes shifted optical signal emitted from the junction. This emission is strongly attenuated by reversing the applied bias voltage. At high bias voltage, the emission intensity depends non-linearly on the optical pump power. The enhanced emission can be modelled by rate equations taking into account hole injection from the tip (anode into the highest occupied orbital of the closest substrate-bound molecule (lower level and radiative recombination with an electron from above the Fermi level (upper level, hence feeding photons back by stimulated emission resonant with the gap mode. The system reflects many essential features of a superluminescent light emitting diode.

  6. Study of problems raised by the production of electronic preamplifier by thin layer evaporation

    International Nuclear Information System (INIS)

    Lesaint, Jean

    1962-01-01

    This research thesis reports the study of the different methods of manufacturing electronic assemblies by deposition of various thin layers in order to reduce dimensions and weight of such assemblies. Thin layers have been prepared by vacuum evaporation. During this preparation, the author identified the problems raised by this miniaturisation technique. The most important ones have been solved and it was then possible to produce by this method charge preamplifiers aimed at the detection of nuclear particles. The author envisages the production of capacitors with such a technique based on thin layers [fr

  7. Low Energy Scanned Electron-Beam Dose Distribution in Thin Layers

    DEFF Research Database (Denmark)

    McLaughlin, W. L.; Hjortenberg, P. E.; Pedersen, Walther Batsberg

    1975-01-01

    Thin radiochromic dye film dosimeters, calibrated by means of calorimetry, make possible the determination of absorbed-dose distributions due to low-energy scanned electron beam penetrations in moderately thin coatings and laminar media. For electrons of a few hundred keV, calibrated dosimeters...... of about 30–60 μm thickness may be used in stacks or interleaved between layers of materials of interest and supply a sufficient number of experimental data points throughout the depth of penetration of electrons to provide a depth-dose curve. Depth doses may be resolved in various polymer layers...... on different backings (wood, aluminum, and iron) for scanned electron beams (Emax = 400 keV) having a broad energy spectrum and diffuse incidence, such as those used in radiation curing of coatings, textiles, plastics, etc. Theoretical calculations of such distributions of energy depositions are relatively...

  8. Polymer Solar Cells with Efficiency >10% Enabled via a Facile Solution-Processed Al-Doped ZnO Electron Transporting Layer

    KAUST Repository

    Jagadamma, Lethy Krishnan

    2015-04-22

    A facile and low-temperature (125 °C) solution-processed Al-doped ZnO (AZO) buffer layer functioning very effectively as electron accepting/hole blocking layer for a wide range of polymer:fullerene bulk heterojunction systems, yielding power conversion efficiency in excess of 10% (8%) on glass (plastic) substrates is described. The ammonia-treatment of the aqueous AZO nanoparticle solution produces compact, crystalline, and smooth thin films, which retain the aluminum doping, and eliminates/reduces the native defects by nitrogen incorporation, making them good electron transporters and energetically matched with the fullerene acceptor. It is demonstrated that highly efficient solar cells can be achieved without the need for additional surface chemical modifications of the buffer layer, which is a common requirement for many metal oxide buffer layers to yield efficient solar cells. Also highly efficient solar cells are achieved with thick AZO films (>50 nm), highlighting the suitability of this material for roll-to-roll coating. Preliminary results on the applicability of AZO as electron injection layer in F8BT-based polymer light emitting diode are also presented. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Simultaneous enhancement of electron injection and air stability in N-type organic field-effect transistors by water-soluble polyfluorene interlayers.

    Science.gov (United States)

    Kim, Jihong; Khim, Dongyoon; Kang, Rira; Lee, Seung-Hoon; Baeg, Kang-Jun; Kang, Minji; Noh, Yong-Young; Kim, Dong-Yu

    2014-06-11

    Here, we report the simultaneous attainment of efficient electron injection and enhanced stability under ambient conditions for top-gate/bottom-contact (TG/BC), n-type, organic field-effect transistors (OFETs) using water-soluble polyfluorene derivatives (WPFs). When inserting the WPF interlayers between a semiconductor and the BC Au electrodes, initially the ambipolar (6,6)-phenyl-C61butyric acid methyl ester (PCBM) OFETs were fully converted to unipolar charge transport characteristics that were exclusively n-type with significantly increased electron mobilities as high as 0.12 cm(2)/(V s) and a decreased threshold voltage. These improvements were mostly attributed to the interfacial dipoles of WPF layers that aligned to form a favorable energy band structure for efficient electron injection and to effectively block counter charge carriers. These were confirmed when values for the reduced work function of metal electrodes with WPFs and their correlated contact resistance were measured via the ultraviolet photoemission spectroscopy and the transmission-line method, respectively. Moreover, the WPF interlayers played an important role in air stability of PCBM OFETs that exhibited higher and appreciably enhanced by increasing the ethylene-oxide side chain lengths of WPFs, which presumably was due to the water/oxygen/ion capturing effects in the hydrophilic interlayers.

  10. The thermodynamic spin magnetization of strongly correlated 2d electrons in a silicon inversion layer

    OpenAIRE

    Prus, O.; Yaish, Y.; Reznikov, M.; Sivan, U.; Pudalov, V.

    2002-01-01

    A novel method invented to measure the minute thermodynamic spin magnetization of dilute two dimensional fermions is applied to electrons in a silicon inversion layer. Interplay between the ferromagnetic interaction and disorder enhances the low temperature susceptibility up to 7.5 folds compared with the Pauli susceptibility of non-interacting electrons. The magnetization peaks in the vicinity of the density where transition to strong localization takes place. At the same density, the suscep...

  11. Behavior of Parameters of Nighttime Electron Density Enhancements of the Ionospheric F2 Layer

    Science.gov (United States)

    Yakovets, Artur; Gordienko, Galina

    2017-04-01

    There is known a wide class of disturbances of the F2-layer of the ionosphere, which are superimposed on the regular diurnal variations of the electron density. Different types of disturbances are characterized by different mechanisms of their generation. Traveling ionospheric disturbances appear to be the most characteristic features of the inhomogeneous structure of the ionosphere. Another type of ionospheric disturbances presents the nighttime electron density enhancements in the ionospheric F2- layer maximum (NmF2). This type of irregularities is described in numerous papers. There is a concept that, in spite of the various mechanisms of ionospheric disturbances generation a response of F2-layer parameters exhibits similar features associated with the upward lift and the simultaneous expansion of the layer and then its subsequent downward movement, including layer compression, which results in the formation of the electron density peak in the layer maximum at the moment of greatest compression. The aim of this study is a verification of this concept on the example of disturbances related with the nighttime electron density enhancements, and the definition of precise quantitative relationships between the variations of different F2-layer parameters for such disturbances. By using the data of the ionospheric vertical sounding in Almaty, (76° 55'E, 43°15'N) during 2001-2012, analysis of the behavior the F2-layer parameters during the night electron density enhancements was carried out within framework of a single concept of effects of various types of ionospheric plasma perturbations in variations of height and half-thickness of the F2-layer, accompanied by increasing and decreasing NmF2 at moments of maximum compression and expansion of the layer. For a quantitative analysis of the parameters of nighttime enhancements we have selected 20 nights characterized by low magnetic activity (Dst> - 50 nT) and evident manifestations of the nighttime electron density

  12. Wide-gap layered oxychalcogenide semiconductors: Materials, electronic structures and optoelectronic properties

    International Nuclear Information System (INIS)

    Ueda, Kazushige; Hiramatsu, Hidenori; Hirano, Masahiro; Kamiya, Toshio; Hosono, Hideo

    2006-01-01

    Applying the concept of materials design for transparent conductive oxides to layered oxychalcogenides, several p-type and n-type layered oxychalcogenides were proposed as wide-gap semiconductors and their basic optical and electrical properties were examined. The layered oxychalcogenides are composed of ionic oxide layers and covalent chalcogenide layers, which bring wide-gap and conductive properties to these materials, respectively. The electronic structures of the materials were examined by normal/inverse photoemission spectroscopy and energy band calculations. The results of the examinations suggested that these materials possess unique features more than simple wide-gap semiconductors. Namely, the layered oxychalcogenides are considered to be extremely thin quantum wells composed of the oxide and chalcogenide layers or 2D chalcogenide crystals/molecules embedded in an oxide matrix. Observation of step-like absorption edges, large band gap energy and large exciton binding energy demonstrated these features originating from 2D density of states and quantum size effects in these layered materials

  13. Plasma dynamics near an earth satellite and neutralization of its electric charge during electron beam injection into the ionosphere

    International Nuclear Information System (INIS)

    Fedorov, V.A.

    2000-01-01

    A study is made of the dynamics of the ionospheric plasma in the vicinity of an earth satellite injecting an electron beam. The time evolution of the electric charge of the satellite is determined. The electric potential of the satellite is found to be well below the beam-cutoff potential. It is shown that, under conditions typical of active experiments in space, the plasma electrons are capable of neutralizing the satellite's charge

  14. Layer-resolved photoelectron diffraction: electron attenuation anisotropy in GaAs

    Czech Academy of Sciences Publication Activity Database

    Bartoš, Igor; Cukr, Miroslav; Jiříček, Petr

    2012-01-01

    Roč. 185, 5-7 (2012), 184-187 ISSN 0368-2048 Grant - others:AVČR(CZ) Praemium Academiae Institutional research plan: CEZ:AV0Z10100521 Keywords : low-energy electron attenuation in GaAs * layer-resolved photoelectron diffraction * synchrotron radiation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.706, year: 2012

  15. Effect of low dose electron beam irradiation on the alteration layer formed during nuclear glass leaching

    Energy Technology Data Exchange (ETDEWEB)

    Mougnaud, S., E-mail: sarah.mougnaud@gmail.com [CEA Marcoule, DEN, DTCD, SECM, BP 17171, 30207 Bagnols-sur-Cèze cedex (France); Tribet, M. [CEA Marcoule, DEN, DTCD, SECM, BP 17171, 30207 Bagnols-sur-Cèze cedex (France); Renault, J.-P. [NIMBE, CNRS, CEA, Université Paris Saclay, CEA Saclay, 91191 Gif-sur-Yvette cedex (France); Jollivet, P. [CEA Marcoule, DEN, DTCD, SECM, BP 17171, 30207 Bagnols-sur-Cèze cedex (France); Panczer, G. [Institut Lumière Matière, UMR 5306, Université Lyon 1-CNRS, Université de Lyon, 69622 Villeurbanne cedex (France); Charpentier, T. [NIMBE, CNRS, CEA, Université Paris Saclay, CEA Saclay, 91191 Gif-sur-Yvette cedex (France); Jégou, C. [CEA Marcoule, DEN, DTCD, SECM, BP 17171, 30207 Bagnols-sur-Cèze cedex (France)

    2016-12-15

    This investigation concerns borosilicate glass leaching mechanisms and the evolution of alteration layer under electron beam irradiation. A simple glass doped with rare earth elements was selected in order to access mechanistic and structural information and better evaluate the effects of irradiation. It was fully leached in initially pure water at 90 °C and at high glass surface area to solution volume ratio (S/V = 20 000 m{sup −1}) in static conditions. Under these conditions, the system quickly reaches the residual alteration rate regime. A small particle size fraction (2–5 μm) was sampled in order to obtain a fairly homogeneous altered material enabling the use of bulk characterization methods. External irradiations with 10 MeV electrons up to a dose of 10 MGy were performed either before or after leaching, to investigate respectively the effect of initial glass irradiation on its alteration behavior and the irradiation stability of the alteration layer. Glass dissolution rate was analyzed by regular leachate samplings and the alteration layer structure was characterized by Raman, luminescence (continuous or time-resolved), and {sup 29}Si MAS NMR and EPR spectroscopy. It was shown that the small initial glass evolutions under irradiation did not induce any modification of the leaching kinetic nor of the structure of the alteration layer. The alteration process seemed to “smooth over” the created defects. Otherwise, the alteration layer and initial glass appeared to have different behaviors under irradiation. No Eu{sup 3+} reduction was detected in the alteration layer after irradiation and the defect creation efficiency was much lower than for initial glass. This can possibly be explained by the protective role of pore water contained in the altered material (∼20%). Moreover, a slight depolymerization of the silicon network of the altered glass under irradiation with electrons was evidenced, whereas in the initial glass it typically

  16. Indium-Free Perovskite Solar Cells Enabled by Impermeable Tin-Oxide Electron Extraction Layers.

    Science.gov (United States)

    Hu, Ting; Becker, Tim; Pourdavoud, Neda; Zhao, Jie; Brinkmann, Kai Oliver; Heiderhoff, Ralf; Gahlmann, Tobias; Huang, Zengqi; Olthof, Selina; Meerholz, Klaus; Többens, Daniel; Cheng, Baochang; Chen, Yiwang; Riedl, Thomas

    2017-07-01

    Corrosive precursors used for the preparation of organic-inorganic hybrid perovskite photoactive layers prevent the application of ultrathin metal layers as semitransparent bottom electrodes in perovskite solar cells (PVSCs). This study introduces tin-oxide (SnO x ) grown by atomic layer deposition (ALD), whose outstanding permeation barrier properties enable the design of an indium-tin-oxide (ITO)-free semitransparent bottom electrode (SnO x /Ag or Cu/SnO x ), in which the metal is efficiently protected against corrosion. Simultaneously, SnO x functions as an electron extraction layer. We unravel the spontaneous formation of a PbI 2 interfacial layer between SnO x and the CH 3 NH 3 PbI 3 perovskite. An interface dipole between SnO x and this PbI 2 layer is found, which depends on the oxidant (water, ozone, or oxygen plasma) used for the ALD growth of SnO x . An electron extraction barrier between perovskite and PbI 2 is identified, which is the lowest in devices based on SnO x grown with ozone. The resulting PVSCs are hysteresis-free with a stable power conversion efficiency (PCE) of 15.3% and a remarkably high open circuit voltage of 1.17 V. The ITO-free analogues still achieve a high PCE of 11%. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Substorm Injected Energetic Electrons and Ions Deeply into the Inner Magnetosphere Observed by BD-IES and Van Allan Probes

    Science.gov (United States)

    Zong, Qiugang

    2017-04-01

    When substorm injections are observed simultaneously with multiple spacecraft, they help elucidate potential mechanisms for particle transport and energization, a topic of great importance for understanding and modeling the magnetosphere. In the present paper, by using the data return from the BeiDa- IES (BD-IES) instrument onboard an inclined (55◦) geosynchronous orbit (IGSO) satellite together with geo-transfer orbit (GTO) Van Allen Probe A&B satellite, we analysis a substorm injection event occurred on Oct 16, 2015. During the substorm injection, the IES onboard IGSO is outbound while both Van Allen Probe A&B satellites are inbound. This configuration of multiple satellite trajectories provides a unique opportunity to investigate the inward and outward radial propagation of the substorm injection simultaneously. This substorm as indicated by AE/AL indices is closely related an IMF/solar wind discontinuity with a sharp change in the IMF Bz direction (northward turning). The innermost signature of this substorm injection has been detected by the Van Allen Probes A & B at L 3.7. The outermost signature, observed by the BD-IES, is found to be at L 10. This indicated that this substorm have a rather global effect rather than just a local effect. Further, we suggest that the electric fields carried by fast-mode compressional waves around the substorm injection are the most likely mechanism candidate for the injection signatures of electrons observed in the innermost and outermost inner magnetosphere.

  18. Radial Propagation of Magnetospheric Substorm Injected Energetic Electrons Observed by BD-IES and Van Allan Probes

    Science.gov (United States)

    Zong, Q.

    2016-12-01

    When substorm injections are observed simultaneously with multiple spacecraft, they help elucidate potential mechanisms for particle transport and energization, a topic of great importance for understanding and modeling the magnetosphere. In the present paper, by using the data return from the BeiDa- IES (BD-IES) instrument onboard an inclined (55°) geosynchronous orbit (IGSO) satellite together with geo-transfer orbit (GTO) Van Allen Probe A&B satellite, we analysis a substorm injection event occurred on Oct 16, 2015. During the substorm injection, the IES onboard IGSO is outbound while both Van Allen Probe A&B satellites are inbound. This configuration of multiple satellite trajectories provides a unique opportunity to investigate the inward and outward radial propagation of the substorm injection simultaneously. This substorm as indicated by AE/AL indices is closely related an IMF/solar wind discontinuity with a sharp change in the IMF Bz direction (northward turning). The innermost signature of this substorm injection has been detected by the Van Allen Probes A & B at L 3.7. The outermost signature, observed by the BD-IES, is found to be at L 10. This indicated that this substorm have a rather global effect rather than just a local effect. Further, we suggest that the electric fields carried by fast-mode compressional waves around the substorm injection are the most likely mechanism candidate for the injection signatures of electrons observed in the innermost and outermost inner magnetosphere.

  19. Electron microscopy of an aluminum layer grown on the vicinal surface of a gallium arsenide substrate

    Energy Technology Data Exchange (ETDEWEB)

    Lovygin, M. V., E-mail: lemi@miee.ru; Borgardt, N. I. [National Research University of Electronic Technology “MIET” (Russian Federation); Kazakov, I. P. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation); Seibt, M. [Universität Göttingen, IV. Physikalisches Institut (Germany)

    2015-03-15

    A thin Al layer grown by molecular-beam epitaxy on a misoriented GaAs (100) substrate is studied by transmission electron microscopy. Electron diffraction data and bright-field, dark-field, and high-resolution images show that, in the layer, there are Al grains of three types of crystallographic orientation: Al (100), Al (110), and Al (110)R. The specific structural features of the interfaces between the differently oriented grains and substrate are studied by digital processing of the high-resolution images. From quantitative analysis of the dark-field images, the relative content and sizes of the differently oriented grains are determined. It is found that atomic steps at the substrate surface cause an increase in the fraction and sizes of Al (110)R grains and a decrease in the fraction of Al (100) grains, compared to the corresponding fractions and sizes in the layer grown on a singular substrate surface.

  20. Quantum electron states and resonances in thin monocrystal layers of noble metals on W (110) substrate

    CERN Document Server

    Vyalykh, D V; Prudnikova, G V; Grigoriev, A Y; Starodubov, A G; Adamchuk, V K

    2002-01-01

    For the first time in monocrystal layers of gold, silver and copper formed at W (110) single crystal surface one observed experimentally electron states and resonances of s p-type. They resulted from spatial localization of the Bloch type electron wave functions in quantum pit with potential barriers formed by vacuum/metal and metal/W (110) interfaces. One applied photoelectron spectroscopy with angular resolution to investigate experimentally into quantization of an electron structure of a valence band in Au/W (110), Ag/W (110) and Cu/W (110) systems

  1. Fabrication of carbon layer coated FE-nanoparticles using an electron beam irradiation

    Science.gov (United States)

    Kim, Hyun Bin; Jeun, Joon Pyo; Kang, Phil Hyun; Oh, Seung-Hwan

    2016-01-01

    A novel synthesis of carbon encapsulated Fe nanoparticles was developed in this study. Fe chloride (III) and polyacrylonitrile (PAN) were used as precursors. The crosslinking of PAN molecules and the nucleation of Fe nanoparticles were controlled by the electron beam irradiation dose. Stabilization and carbonization processes were carried out using a vacuum furnace at 275 °C and 1000 °C, respectively. Micro structures were evaluated by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Fe nanoparticles were formed with diameters of 100 nm, and the Fe nanoparticles were encapsulated by carbon layers. As the electron beam irradiation dose increased, it was observed that the particle sizes decreased.

  2. Electron physics and ambipolarity in the tokamak scrape-off layer

    Energy Technology Data Exchange (ETDEWEB)

    Hazeltine, R.D. [Texas Univ., Austin, TX (United States). Inst. for Fusion Studies; Catto, P.J. [Massachusetts Inst. of Tech., Cambridge, MA (United States)

    1994-04-01

    Models of the electron behavior in the scrape-off layer (SOL) of diverted and limited boundary conditions that occurs tokamak plasmas must retain the abrupt change in boundary conditions that occurs across the separatrix or last closed flux surface as well as the electron reflecting Debye sheath established at the limiter or divertor plates. The balance between ion radial diffusion and streaming to the plates sets the SOL width and the electrons must adjust the Debye sheath at the plates to main tain quasineutrality and ambipolarity in the SOL beyond the last closed flux surface. We consider the long mean-free-path limit where a bounce-averaged kinetic electron model results in a steady-state balance in the SOL between radial diffusive feed from the core and velocity space diffusive loss to the plates due to collisional detrapping. In this double diffusion model a velocity space boundary layer occurs about the trapped-passing boundary where strong velocity space gradients must balance the streaming of the newly de-trapped electrons to the plates. The behavior of the electron distribution function in the velocity provides the information needed to evaluate the Debye-sheath-dependent electron loss rate.

  3. Improving Charge Injection via a Blade-Coating Molybdenum Oxide Layer: Toward High-Performance Large-Area Quantum-Dot Light-Emitting Diodes.

    Science.gov (United States)

    Zeng, Qunying; Xu, Zhongwei; Zheng, Congxiu; Liu, Yang; Chen, Wei; Guo, Tailiang; Li, Fushan; Xiang, Chaoyu; Yang, Yixing; Cao, Weiran; Xie, Xiangwei; Yan, Xiaolin; Qian, Lei; Holloway, Paul H

    2018-02-21

    A solution-processed molybdenum oxide (MoO x ) as the hole injection layer (HIL) by doctor-blade coating was developed to improve the efficiency and lifetime of red-emitting quantum-dot light-emitting diodes (QD-LEDs). It has been demonstrated that by adding isopropyl alcohol into the MoO x precursor during the doctor-blade coating process, the morphology, composition, and the surface electronic structure of the MoO x HIL could be tailored. A high-quality MoO x film with optimized charge injection was obtained, based on which all-solution-processed highly efficient red-emitting QD-LEDs were realized by using a low-cost doctor-blade coating technique under ambient conditions. The red QD-LEDs exhibited the maximum current efficiency and external quantum efficiency of 16 cd/A and 15.1%, respectively. Moreover, the lifetime of red devices initializing at 100 cd/m 2 was 3236 h under ambient conditions, which is about twice as long as those with a conventional poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) HIL. Large-area QD-LEDs with 4 in. emitting areas were fabricated with blade coating as well, which exhibit a high efficiency of 12.1 cd/A for red emissions. Our work paves a new way to the realization of efficient large-area QD-LEDs, and the processing and findings from this work can be expanded into next-generation lighting and flat-panel displays.

  4. Stable, tunable, quasimonoenergetic electron beams produced in a laser wakefield near the threshold for self-injection

    Directory of Open Access Journals (Sweden)

    S. Banerjee

    2013-03-01

    Full Text Available Stable operation of a laser-plasma accelerator near the threshold for electron self-injection in the blowout regime has been demonstrated with 25–60 TW, 30 fs laser pulses focused into a 3–4 millimeter length gas jet. Nearly Gaussian shape and high nanosecond contrast of the focused pulse appear to be critically important for controllable, tunable generation of 250–430 MeV electron bunches with a low-energy spread, ∼10  pC charge, a few-mrad divergence and pointing stability, and a vanishingly small low-energy background. The physical nature of the near-threshold behavior is examined using three-dimensional particle-in-cell simulations. Simulations indicate that properly locating the nonlinear focus of the laser pulse within the plasma suppresses continuous injection, thus reducing the low-energy tail of the electron beam.

  5. Double-atomic layer of Tl on Si(111): Atomic arrangement and electronic properties

    Science.gov (United States)

    Mihalyuk, Alexey N.; Bondarenko, Leonid V.; Tupchaya, Alexandra Y.; Gruznev, Dimitry V.; Chou, Jyh-Pin; Hsing, Cheng-Rong; Wei, Ching-Ming; Zotov, Andrey V.; Saranin, Alexander A.

    2018-02-01

    Metastable double-atomic layer of Tl on Si(111) has recently been found to display interesting electric properties, namely superconductivity below 0.96 K and magnetic-field-induced transition into an insulating phase intermediated by a quantum metal state. In the present work, using a set of experimental techniques, including low-energy electron diffraction, scanning tunneling microscopy, angle-resolved photoelectron spectroscopy, in a combination with density-functional-theory calculations, we have characterized atomic and electronic properties of the Tl double layer on Si(111). The double Tl layer has been concluded to contain ∼ 2.4 monolayer of Tl. A top Tl layer has a '1 × 1' basic structure and displays 6 × 6 moiré pattern which originates from various residence sites of Tl atoms. Upon cooling below ∼ 140 K, the 6 × 6 moiré pattern changes to that having a 6√{ 3} × 6√{ 3} periodicity. However, the experimentally determined electron band dispersions show a 1 × 1 periodicity. The calculated band structure unfolded into the 1 × 1 surface Brillouin zone reproduces well the main features of the photoelectron spectra.

  6. ZnO nanostructures as electron extraction layers for hybrid perovskite thin films

    Science.gov (United States)

    Nikolaidou, Katerina; Sarang, Som; Tung, Vincent; Lu, Jennifer; Ghosh, Sayantani

    Optimum interaction between light harvesting media and electron transport layers is critical for the efficient operation of photovoltaic devices. In this work, ZnO layers of different morphologies are implemented as electron extraction and transport layers for hybrid perovskite CH3NH3PbI3 thin films. These include nanowires, nanoparticles, and single crystalline film. Charge transfer at the ZnO/perovskite interface is investigated and compared through ultra-fast characterization techniques, including temperature and power dependent spectroscopy, and time-resolved photoluminescence. The nanowires cause an enhancement in perovskite emission, which may be attributed to increased scattering and grain boundary formation. However, the ZnO layers with decreasing surface roughness exhibit better electron extraction, as inferred from photoluminescence quenching, reduction in the number of bound excitons, and reduced exciton lifetime in CH3NH3PbI3 samples. This systematic study is expected to provide an understanding of the fundamental processes occurring at the ZnO-CH3NH3PbI3 interface and ultimately, provide guidelines for the ideal configuration of ZnO-based hybrid Perovskite devices. This research was supported by National Aeronautics and Space administration (NASA) Grant No: NNX15AQ01A.

  7. In Situ Transmission Electron Microscopy Characterization and Manipulation of Two-Dimensional Layered Materials beyond Graphene.

    Science.gov (United States)

    Luo, Chen; Wang, Chaolun; Wu, Xing; Zhang, Jian; Chu, Junhao

    2017-09-01

    Two-dimensional (2D) ultra-thin materials beyond graphene with rich physical properties and unique layered structures are promising for applications in electronics, chemistry, energy, and bioscience, etc. The interaction mechanisms among the structures, chemical compositions and physical properties of 2D layered materials are critical for fundamental nanosciences and the practical fabrication of next-generation nanodevices. Transmission electron microscopy (TEM), with its high spatial resolution and versatile external fields, is undoubtedly a powerful tool for the static characterization and dynamic manipulation of nanomaterials and nanodevices at the atomic scale. The rapid development of thin-film and precision microelectromechanical systems (MEMS) techniques allows 2D layered materials and nanodevices to be probed and engineered inside TEM under external stimuli such as thermal, electrical, mechanical, liquid/gas environmental, optical, and magnetic fields at the nanoscale. Such advanced technologies leverage the traditional static TEM characterization into an in situ and interactive manipulation of 2D layered materials without sacrificing the resolution or the high vacuum chamber environment, facilitating exploration of the intrinsic structure-property relationship of 2D layered materials. In this Review, the dynamic properties tailored and observed by the most advanced and unprecedented in situ TEM technology are introduced. The challenges in spatial, time and energy resolution are discussed also. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Interpretation of electron beam induced charging of oxide layers in a transistor studied using electron holography

    DEFF Research Database (Denmark)

    Ubaldi, F; Pozzi, G; Kasama, Takeshi

    2010-01-01

    between metal contacts show unexpected elliptical phase contours centered several hundreds of nm from the specimen edge. The experimental images are compared with simulations performed using three-dimensional calculations of the electrostatic potential inside and outside the specimen, which take...... into account the mean inner potential of the specimen and the perturbed vacuum reference wave. The simulations suggest that the oxide layers contain a uniform volume density of positive charge and that the elliptical contours result from the combined effect of the electrostatic potential in the specimen...

  9. Graphene-layered steps and their fields visualized by 4D electron microscopy.

    Science.gov (United States)

    Park, Sang Tae; Yurtsever, Aycan; Baskin, John Spencer; Zewail, Ahmed H

    2013-06-04

    Enhanced image contrast has been seen at graphene-layered steps a few nanometers in height by means of photon-induced near-field electron microscopy (PINEM) using synchronous femtosecond pulses of light and electrons. The observed steps are formed by the edges of graphene strips lying on the surface of a graphene substrate, where the strips are hundreds of nanometers in width and many micrometers in length. PINEM measurements reflect the interaction of imaging electrons and induced (near) electric fields at the steps, and this leads to a much higher contrast than that achieved in bright-field transmission electron microscopy imaging of the same strips. Theory and numerical simulations support the experimental PINEM findings and elucidate the nature of the electric field at the steps formed by the graphene layers. These results extend the range of applications of the experimental PINEM methodology, which has previously been demonstrated for spherical, cylindrical, and triangular nanostructures, to shapes of high aspect ratio (rectangular strips), as well as into the regime of atomic layer thicknesses.

  10. The inversion layer of electric fields and electron phase-space-hole structure during two-dimensional collisionless magnetic reconnection

    International Nuclear Information System (INIS)

    Chen Lijen; Lefebvre, Bertrand; Torbert, Roy B.; Daughton, William S.

    2011-01-01

    Based on two-dimensional fully kinetic simulations that resolve the electron diffusion layer in undriven collisionless magnetic reconnection with zero guide field, this paper reports the existence and evolution of an inversion layer of bipolar electric fields, its corresponding phase-space structure (an electron-hole layer), and the implication to collisionless dissipation. The inversion electric field layer is embedded in the layer of bipolar Hall electric field and extends throughout the entire length of the electron diffusion layer. The electron phase-space hole structure spontaneously arises during the explosive growth phase when there exist significant inflows into the reconnection layer, and electrons perform meandering orbits across the layer while being cyclotron-turned toward the outflow directions. The cyclotron turning of meandering electrons by the magnetic field normal to the reconnection layer is shown to be a primary factor limiting the current density in the region where the reconnection electric field is balanced by the gradient (along the current sheet normal) of the off-diagonal electron pressure-tensor.

  11. Double layer formation

    International Nuclear Information System (INIS)

    Singh, N.

    1982-01-01

    Results from several numerical simulations of the formation of double layers in plasmas with a constant potential drop across them are presented. Here the emphasis is mainly on plasma processes during the formation of double layers. The recurring formation of double layers, their propagation and associated current interruptions are observed when the electron current injected into the simulation region from the low potential side exceeds the electron thermal current. This recurring process is stopped (or delayed) when the electron current recuperation is inhibited by a small magnetic force on the electrons. The motion of double layers is examined and it is found that the motion is caused by the interruption of the ion current from the high potential side. The subsequent recovery of this current renders the double layer stationary. (author)

  12. Electron-phonon coupling in graphene placed between magnetic Li and Si layers on cobalt

    Science.gov (United States)

    Usachov, Dmitry Yu.; Fedorov, Alexander V.; Vilkov, Oleg Yu.; Ogorodnikov, Ilya I.; Kuznetsov, Mikhail V.; Grüneis, Alexander; Laubschat, Clemens; Vyalikh, Denis V.

    2018-02-01

    Using angle-resolved photoemission spectroscopy (ARPES), we study the electronic structure and electron-phonon coupling in a Li-doped graphene monolayer decoupled from the Co(0001) substrate by intercalation of silicon. Based on the photoelectron diffraction measurements, we disclose the structural properties of the Si/Co interface. Our density functional theory calculations demonstrate that in the studied Li/graphene/Si/Co system the magnetism of Co substrate induces notable magnetic moments on Li and Si atoms. At the same time graphene remains almost nonmagnetic and clamped between two magnetically active atomic layers with antiparallel magnetizations. ARPES maps of the graphene Fermi surface reveal strong electron doping, which may lead to superconductivity mediated by electron-phonon coupling (EPC). Analysis of the spectral function of photoelectrons reveals apparent anisotropy of EPC in the k space. These properties make the studied system tempting for studying the relation between superconductivity and magnetism in two-dimensional materials.

  13. Pain Elimination during Injection with Newer Electronic Devices: A Comparative Evaluation in Children.

    Science.gov (United States)

    Bansal, Neha; Saha, Sonali; Jaiswal, Jn; Samadi, Firoza

    2014-05-01

    The present study was taken up to clinically evaluate and compare effectiveness of transcutaneous electrical nerve stimulator (TENS) and comfort control syringe (CCS) in various pediatric dental procedures as an alternative to the conventional method of local anesthesia (LA) administration. Ninety healthy children having at least one deciduous molar tooth indicated for extraction in either maxillary right or left quadrant in age group of 6 to 10 years were randomly divided into three equal groups having 30 subjects each. Group I: LA administration using conventional syringe, group II: LA administration using TENS along with the conventional syringe, group III: LA administration using CCS. After LA by the three techniques, pain, anxiety and heart rate were measured. The observations, thus, obtained were subjected to statistical analysis using analysis of variance (ANOVA), student t-test and paired t-test. The mean pain score was maximum in group I followed by group II, while group III revealed the minimum pain, where LA was administered using CCS. Mean anxiety score was maximum in group I followed by group II, while group III revealed the minimum score. Mean heart rate was maximum in group I followed in descending order by groups II and III. The study supports the belief that CCS could be a viable alternative in comparison to the other two methods of LA delivery in children. How to cite this article: Bansal N, Saha S, Jaiswal JN, Samadi F. Pain Elimination during Injection with Newer Electronic Devices: A Comparative Evaluation in Children. Int J Clin Pediatr Dent 2014;7(2):71-76.

  14. Characteristic electron energy loss spectra in SiC buried layers formed by C+ implantation into crystalline silicon

    International Nuclear Information System (INIS)

    Yan Hui; Chen Guanghua; Kwok, R.W.M.

    1998-01-01

    SiC buried layers were synthesized by a metal vapor vacuum arc ion source, with C + ions implanted into crystalline Si substrates. According to X-ray photoelectron spectroscopy, the characteristic electron energy loss spectra of the SiC buried layers were studied. It was found that the characteristic electron energy loss spectra depend on the profiles of the carbon content, and correlate well with the order of the buried layers

  15. Effect of additive gases and injection methods on chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F2 remote plasmas

    International Nuclear Information System (INIS)

    Yun, Y. B.; Park, S. M.; Kim, D. J.; Lee, N.-E.; Kim, K. S.; Bae, G. H.

    2007-01-01

    The authors investigated the effects of various additive gases and different injection methods on the chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F 2 remote plasmas. N 2 and N 2 +O 2 gases in the F 2 /Ar/N 2 and F 2 /Ar/N 2 /O 2 remote plasmas effectively increased the etch rate of the layers. The addition of direct-injected NO gas increased the etch rates most significantly. NO radicals generated by the addition of N 2 and N 2 +O 2 or direct-injected NO molecules contributed to the effective removal of nitrogen and oxygen in the silicon nitride and oxide layers, by forming N 2 O and NO 2 by-products, respectively, and thereby enhancing SiF 4 formation. As a result of the effective removal of the oxygen, nitrogen, and silicon atoms in the layers, the chemical dry etch rates were enhanced significantly. The process regime for the etch rate enhancement of the layers was extended at elevated temperature

  16. Effects of buried high-Z layers on fast electron propagation

    International Nuclear Information System (INIS)

    Yang, Xiaohu; Zhuo, Hongbin; Ma, Yanyun; Shao, Fuqiu; Xu, Han; Yin Yan; Borghesi, M.

    2014-01-01

    The transport through high density plasmas of relativistic electron beams generated by ultra-intense laser-plasma interaction has potential applications in laser-driven ion acceleration and in the fast igniter scheme for inertial confinement fusion. By extending a prior model [A.R. Bell, J.R. Davies, S.M. Guerin, Phys. Rev. E 58, 2471 (1998)], the magnetic field generated during the transport of a fast electron beam driven by an ultra-intense laser in a solid target is derived analytically and applied to estimate the effect of such field on fast electron propagation through a buried high-Z layer in a lower-Z target. It is found that the effect gets weaker with the increase of the depth of the buried layer, the divergence of the fast electrons, and the laser intensity, indicating that magnetic field effects on the fast electron divergence as measured from K a X-ray emission may need to be considered for moderate laser intensities. On the basis of the calculations, some considerations are made on how one can mitigate the effect of the magnetic field generated at the interface. (authors)

  17. Solitons and double-layers of electron-acoustic waves in magnetized plasma; an application to auroral zone plasma

    Science.gov (United States)

    El-Labany, S. K.; Shalaby, M.; Sabry, R.; El-Sherif, L. S.

    2012-07-01

    A theoretical investigation is carried out for understanding the properties of electron-acoustic potential structures (i.e., solitary waves and double-layers) in a magnetized plasma whose constituents are a cold magnetized electron fluid, hot electrons obeying a nonthermal distribution, and stationary ions. For this purpose, the hydrodynamic equations for the cold magnetized electron fluid, nonthermal electron density distribution, and the Poisson equation are used to derive the corresponding nonlinear evolution equation; modified Zakharov-Kuznetsov (MZK) equation, in the small amplitude regime. The MZK equation is analyzed to examine the existence regions of the solitary pulses and double-layers. It is found that rarefactive electron-acoustic solitary waves and double-layers strongly depend on the density and temperature ratios of the hot-to-cold electron species as well as the nonthermal electron parameter.

  18. A TiO2nanotube network electron transport layer for high efficiency perovskite solar cells.

    Science.gov (United States)

    Gao, Xianfeng; Li, Jianyang; Gollon, Sam; Qiu, Ming; Guan, Dongsheng; Guo, Xiaoru; Chen, Junhong; Yuan, Chris

    2017-02-15

    The electron transport layer (ETL) plays a critical role in high efficiency perovskite solar cells. In this study, an anodic TiO 2 nanotube film was transformed into a TiO 2 nanotube network film, which maintained its advantage as an efficient ETL for perovskite solar cells. Compared with the mesoporous TiO 2 nanoparticle ETL, the TiO 2 nanotube network ETL can increase the efficiency of perovskite solar cells by 26.6%, which is attributed to its superior charge collection property and light trapping ability. The results confirm the importance of optimizing the electron collecting layer and suggest another way to design and fabricate novel perovskite solid state solar cells, potentially by using a TiO 2 nanotube network film as an alternative high efficiency electrode.

  19. Detector and Front-end electronics for ALICE and STAR silicon strip layers

    CERN Document Server

    Arnold, L; Coffin, J P; Guillaume, G; Higueret, S; Jundt, F; Kühn, C E; Lutz, Jean Robert; Suire, C; Tarchini, A; Berst, D; Blondé, J P; Clauss, G; Colledani, C; Deptuch, G; Dulinski, W; Hu, Y; Hébrard, L; Kucewicz, W; Boucham, A; Bouvier, S; Ravel, O; Retière, F

    1998-01-01

    Detector modules consisting of Silicon Strip Detector (SSD) and Front End Electronics (FEE) assembly have been designed in order to provide the two outer layers of the ALICE Inner Tracker System (ITS) [1] as well as the outer layer of the STAR Silicon Vertex Tracker (SVT) [2]. Several prototypes have beenproduced and tested in the SPS and PS beam at CERN to validate the final design. Double-sided, AC-coupled SSD detectors provided by two different manufacturers and also a pair of single-sided SSD have been asssociated to new low-power CMOS ALICE128C ASIC chips in a new detector module assembly. The same detectors have also been associated to current Viking electronics for reference purpose. These prototype detector modules are described and some first results are presented.

  20. Lifetime enhanced phosphorescent organic light emitting diode using an electron scavenger layer

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Seokhwan; Kim, Ji Whan; Lee, Sangyeob, E-mail: sy96.lee@samsung.com [Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, Gyeonggi 443-803 (Korea, Republic of)

    2015-07-27

    We demonstrate a method to improve lifetime of a phosphorescent organic light emitting diode (OLED) using an electron scavenger layer (ESL) in a hole transporting layer (HTL) of the device. We use a bis(1-(phenyl)isoquinoline)iridium(III)acetylacetonate [Ir(piq){sub 2}(acac)] doped HTL to stimulate radiative decay, preventing thermal degradation in HTL. The ESL effectively prevented non-radiative decay of leakage electron in HTL by converting non-radiative decay to radiative decay via a phosphorescent red emitter, Ir(piq){sub 2}(acac). The lifetime of device (t{sub 95}: time after 5% decrease of luminance) has been increased from 75 h to 120 h by using the ESL in a phosphorescent green-emitting OLED.

  1. Electron density modification in ionospheric E layer by inserting fine dust particles

    International Nuclear Information System (INIS)

    Misra, Shikha; Mishra, S. K.

    2015-01-01

    In this paper, we have developed the kinetics of E-region ionospheric plasma comprising of fine dust grains and shown that the electron density in E-layer can purposely be reduced/enhanced up to desired level by inserting fine dust particles of appropriate physical/material properties; this may certainly be promising for preferred rf-signal processing through these layers. The analytical formulation is based on average charge theory and includes the number and energy balance of the plasma constituents along with charge balance over dust particles. The effect of varying number density, work function, and photo-efficiency of dust particles on ionospheric plasma density at different altitude in E-layer has been critically examined and presented graphically

  2. Nanoparticle mediated electron transfer across organic layers: from current understanding to applications

    Energy Technology Data Exchange (ETDEWEB)

    Gooding, J. Justin; Alam, Muhammad Tanzirul; Barfidokht, Abbas; Carter, Lachlan, E-mail: justin.gooding@unsw.edu.au [School of Chemistry and Australian Centre for NanoMedicine, The University of New South Wales, Sydney (Australia)

    2014-03-15

    In the last few years electrode-organic layer-nanoparticle constructs have attracted considerable research interest for systems where in the absence of the nanoparticles the electrode is passivated. This is because it has been observed that if the organic layer is a good self-assembled monolayer that passivates the electrode, the presence of the nanoparticles 'switches on' faradaic electrochemistry and because electron transfer between the electrode and the nanoparticles is apparently independent of the thickness of the organic layer. This review 1) outlines the full extent of the experimental observations regarding this phenomenon, 2) discusses a recent theoretical description to explain the observations that have just been supported with experimental evidences and 3) provides an overview of the application of these systems in sensing and photovoltaic. (author)

  3. Planar heterojunction perovskite solar cell based on CdS electron transport layer

    KAUST Repository

    Abulikemu, Mutalifu

    2017-07-02

    We report on planar heterojunction perovskite solar cells employing a metal chalcogenide (CdS) electron transport layer with power conversion efficiency up to 10.8%. The CdS layer was deposited via solution-process chemical bath deposition at low-temperature (60°C). Pinhole-free and uniform thin films were obtained with good structural, optical and morphological properties. An optimal layer thickness of 60nm yielded an improved open-circuit voltage and fill factor compared to the standard TiO2-based solar cells. Devices showed a higher reproducibility of the results compared to TiO2-based ones. We also tested the effect of annealing temperature on the CdS film and the effect of CdCl2 treatment followed by high temperature annealing (410°C) that is expected to passivate the surface, thus eliminating eventual trap-states inducing recombination.

  4. Growth and electronic structure of single-layered transition metal dichalcogenides

    DEFF Research Database (Denmark)

    Dendzik, Maciej

    2016-01-01

    The discovery of graphene has opened a novel research direction focused on the properties of 2D materials. Transition metal dichalcogenides (TMDCs) were quickly identified as important materials due to the great variety of electronic properties that they manifest – properties that are markedly...... different from graphene’s. For example, semiconducting TMDCs undergo an indirectdirect band gap transition when thinned to a single layer (SL); this results in greatly enhanced photoluminescence, making those materials attractive for applications in optoelectronics. Furthermore, metallic TMDCs can host...... TMDCs is directly studied with angle-resolved photoemission spectroscopy (ARPES) and x-ray photoelectron spectroscopy (XPS) techniques. Experimental results are compared with density-functional theory calculations (DFT), both for a free-standing layer and for a layer adsorbed on a metallic substrate...

  5. Structure and properties of titanium surface layers after electron beam alloying with powder mixtures containing carbon

    International Nuclear Information System (INIS)

    Lenivtseva, O.G.; Bataev, I.A.; Golkovskii, M.G.; Bataev, A.A.; Samoilenko, V.V.; Plotnikova, N.V.

    2015-01-01

    Highlights: • Wear resistant coatings up to 2 mm thick were clad on titanium by an electron beam in air. • The microhardness of the alloys was increased from 2 to 8 GPa due to the formation of TiC particles. • Alloying of titanium increased the abrasive wear resistance of the alloy by a factor of 9.3. - Abstract: The structure and tribological properties of commercially pure titanium (cp-Ti) samples after non-vacuum electron beam surface alloying with carbon were studied. Two types of powders were used to introduce carbon in surface layer of cp-Ti: titanium carbide (TiC) and mixture of pure titanium and graphite (“Ti + C”). Single layer and multilayer coatings were studied. Application of electron beam for alloying provided cladding rate of 4.5 m 2 /h. The thickness of the clad coatings was 1.6–2.0 mm. The main phases received after “Ti + C” powder cladding were α-titanium, TiC, and retained graphite. In the samples obtained by cladding of TiC, graphite was not observed. A factor determining the microhardness and tribological properties of the cladded layer was the volume fraction of TiC. Maximum coating microhardness of 8 GPa was obtained by cladding of single layer of TiC powder or two layers of the “Ti + C” mixture. Two types of tests were carried out to evaluate the wear resistance of the samples. In friction tests against loose abrasive particles, the wear rate of the best samples was 9.3 times lower than that of cp-Ti. In wear tests using fixed abrasive particles, the relative wear resistance of the best samples was 2.3 times higher than that of cp-Ti.

  6. Thermal modeling of multi-shape heating sources on n-layer electronic board

    Directory of Open Access Journals (Sweden)

    Monier-Vinard Eric

    2017-01-01

    Full Text Available The present work completes the toolbox of analytical solutions that deal with resolving steady-state temperatures of a multi-layered structure heated by one or many heat sources. The problematic of heating sources having non-rectangular shapes is addressed to enlarge the capability of analytical approaches. Moreover, various heating sources could be located on the external surfaces of the sandwiched layers as well as embedded at interface of its constitutive layers. To demonstrate its relevance, the updated analytical solution has been compared with numerical simulations on the case of a multi-layered electronic board submitted to a set of heating source configurations. The comparison shows a high agreement between analytical and numerical calculations to predict the centroid and average temperatures. The promoted analytical approach establishes a kit of practical expressions, easy to implement, which would be cumulated, using superposition principle, to help electronic designers to early detect component or board temperatures beyond manufacturer limit. The ability to eliminate bad concept candidates with a minimum of set-up, relevant assumptions and low computation time can be easily achieved.

  7. Theoretical investigation of electronic and magnetic properties of MnAu layers

    International Nuclear Information System (INIS)

    Masrour, R.; Hlil, E.K.; Hamedoun, M.; Benyoussef, A.; Mounkachi, O.; Bahmad, L.

    2013-01-01

    Self-consistent ab initio calculations, based on the density functional theory (DFT) approach and using the full potential linear augmented plane wave (FLAPW) method, are performed to investigate both electronic and magnetic properties of the MnAu layers. Polarized spin and spin–orbit coupling are included in calculations within the framework of the antiferromagnetic state between two adjacent Mn layers. Magnetic moment considered to lie along a axes are computed. The data obtained from the ab initio calculations are then used as input for the high temperature series expansions (HTSEs) calculation to compute other magnetic parameters. The exchange integrals between the magnetic atoms in the same layer and between the magnetic atoms in the bilayers adjacent are given by using mean field theory. The HTSEs of the magnetic susceptibility of MnAu antiferromagnetic spin-S through two model: Ising and XY layers consisting of l=2, 3, 4, 5, 6 and bulk (∞) interacting layers, are studied to sixth order series in β=1/k B T obtained for free-surface boundary conditions. The effects of finite size on critical-point behavior are studied by extrapolation of the high-temperature series. The Néel temperature T N (l) as a function of the number of l spin layers is obtained by HTSEs of the magnetic susceptibility series by using the Padé approximant method and by MFT theory. The critical exponent γ associated with the magnetic susceptibility is deduced. T N (l) for the l-layers are estimated from the divergence of the staggered susceptibility with an exponent for Ising model of γ(1)=2.96, and for XY model of γ(2)=2.82, which is consistent with the basic assumptions of scaling laws. Our estimates for the shift exponent of the Néel temperature for the two models are obtained. - Highlights: ► ab initio calculations is using to investigate both electronic and magnetic properties of the MnAu layers. ► Obtained data from ab initio calculations are used as input for the HTSEs

  8. Layer-dependent anisotropic electronic structure of freestanding quasi-two-dimensional Mo S 2

    KAUST Repository

    Hong, Jinhua

    2016-02-29

    The anisotropy of the electronic transition is a well-known characteristic of low-dimensional transition-metal dichalcogenides, but their layer-thickness dependence has not been properly investigated experimentally until now. Yet, it not only determines the optical properties of these low-dimensional materials, but also holds the key in revealing the underlying character of the electronic states involved. Here we used both angle-resolved electron energy-loss spectroscopy and spectral analysis of angle-integrated spectra to study the evolution of the anisotropic electronic transition involving the low-energy valence electrons in the freestanding MoS2 layers with different thicknesses. We are able to demonstrate that the well-known direct gap at 1.8 eV is only excited by the in-plane polarized field while the out-of-plane polarized optical gap is 2.4 ± 0.2 eV in monolayer MoS2. This contrasts with the much smaller anisotropic response found for the indirect gap in the few-layer MoS2 systems. In addition, we determined that the joint density of states associated with the indirect gap transition in the multilayer systems and the corresponding indirect transition in the monolayer case has a characteristic three-dimensional-like character. We attribute this to the soft-edge behavior of the confining potential and it is an important factor when considering the dynamical screening of the electric field at the relevant excitation energies. Our result provides a logical explanation for the large sensitivity of the indirect transition to thickness variation compared with that for the direct transition, in terms of quantum confinement effect.

  9. Tailoring the laser pulse shape to improve the quality of the self-injected electron beam in laser wakefield acceleration

    International Nuclear Information System (INIS)

    Upadhyay, Ajay K.; Samant, Sushil A.; Krishnagopal, S.

    2013-01-01

    In laser wakefield acceleration, tailoring the shape of the laser pulse is one way of influencing the laser-plasma interaction and, therefore, of improving the quality of the self-injected electron beam in the bubble regime. Using three-dimensional particle-in-cell simulations, the evolution dynamics of the laser pulse and the quality of the self-injected beam, for a Gaussian pulse, a positive skew pulse (i.e., one with sharp rise and slow fall), and a negative skew pulse (i.e., one with a slow rise and sharp fall) are studied. It is observed that with a negative skew laser pulse there is a substantial improvement in the emittance (by around a factor of two), and a modest improvement in the energy-spread, compared to Gaussian as well as positive skew pulses. However, the injected charge is less in the negative skew pulse compared to the other two. It is also found that there is an optimal propagation distance that gives the best beam quality; beyond this distance, though the energy increases, the beam quality deteriorates, but this deterioration is least for the negative skew pulse. Thus, the negative skew pulse gives an improvement in terms of beam quality (emittance and energy spread) over what one can get with a Gaussian or positive skew pulse. In part, this is because of the lesser injected charge, and the strong suppression of continuous injection for the negative skew pulse.

  10. Statistical study of the location and size of the electron edge of the Low-Latitude Boundary Layer as observed by Cluster at mid-altitudes

    Directory of Open Access Journals (Sweden)

    Y. V. Bogdanova

    2006-10-01

    Full Text Available The nature of particle precipitations at dayside mid-altitudes can be interpreted in terms of the evolution of reconnected field lines. Due to the difference between electron and ion parallel velocities, two distinct boundary layers should be observed at mid-altitudes between the boundary between open and closed field lines and the injections in the cusp proper. At lowest latitudes, the electron-dominated boundary layer, named the "electron edge" of the Low-Latitude Boundary Layer (LLBL, contains soft-magnetosheath electrons but only high-energy ions of plasma sheet origin. A second layer, the LLBL proper, is a mixture of both ions and electrons with characteristic magnetosheath energies. The Cluster spacecraft frequently observe these two boundary layers. We present an illustrative example of a Cluster mid-altitude cusp crossing with an extended electron edge of the LLBL. This electron edge contains 10–200 eV, low-density, isotropic electrons, presumably originating from the solar wind halo population. These are occasionally observed with bursts of parallel and/or anti-parallel-directed electron beams with higher fluxes, which are possibly accelerated near the magnetopause X-line. We then use 3 years of data from mid-altitude cusp crossings (327 events to carry out a statistical study of the location and size of the electron edge of the LLBL. We find that the equatorward boundary of the LLBL electron edge is observed at 10:00–17:00 magnetic local time (MLT and is located typically between 68° and 80° invariant latitude (ILAT. The location of the electron edge shows a weak, but significant, dependence on some of the external parameters (solar wind pressure, and IMF BZ- component, in agreement with expectations from previous studies of the cusp location. The latitudinal extent of the electron edge has been estimated using new multi-spacecraft techniques. The Cluster tetrahedron crosses the electron and ion boundaries of the LLBL/cusp with

  11. Silicon-ion-implanted PMMA with nanostructured ultrathin layers for plastic electronics

    Science.gov (United States)

    Hadjichristov, G. B.; Ivanov, Tz E.; Marinov, Y. G.

    2014-12-01

    Being of interest for plastic electronics, ion-beam produced nanostructure, namely silicon ion (Si+) implanted polymethyl-methacrylate (PMMA) with ultrathin nanostructured dielectric (NSD) top layer and nanocomposite (NC) buried layer, is examined by electric measurements. In the proposed field-effect organic nanomaterial structure produced within the PMMA network by ion implantation with low energy (50 keV) Si+ at the fluence of 3.2 × 1016 cm-2 the gate NSD is ion-nanotracks-modified low-conductive surface layer, and the channel NC consists of carbon nanoclusters. In the studied ion-modified PMMA field-effect configuration, the gate NSD and the buried NC are formed as planar layers both with a thickness of about 80 nm. The NC channel of nano-clustered amorphous carbon (that is an organic semiconductor) provides a huge increase in the electrical conduction of the material in the subsurface region, but also modulates the electric field distribution in the drift region. The field effect via the gate NSD is analyzed. The most important performance parameters, such as the charge carrier field-effect mobility and amplification of this particular type of PMMA- based transconductance device with NC n-type channel and gate NSD top layer, are determined.

  12. Aluminum-Doped Zinc Oxide as Highly Stable Electron Collection Layer for Perovskite Solar Cells.

    Science.gov (United States)

    Zhao, Xingyue; Shen, Heping; Zhang, Ye; Li, Xin; Zhao, Xiaochong; Tai, Meiqian; Li, Jingfeng; Li, Jianbao; Li, Xin; Lin, Hong

    2016-03-01

    Although low-temperature, solution-processed zinc oxide (ZnO) has been widely adopted as the electron collection layer (ECL) in perovskite solar cells (PSCs) because of its simple synthesis and excellent electrical properties such as high charge mobility, the thermal stability of the perovskite films deposited atop ZnO layer remains as a major issue. Herein, we addressed this problem by employing aluminum-doped zinc oxide (AZO) as the ECL and obtained extraordinarily thermally stable perovskite layers. The improvement of the thermal stability was ascribed to diminish of the Lewis acid-base chemical reaction between perovskite and ECL. Notably, the outstanding transmittance and conductivity also render AZO layer as an ideal candidate for transparent conductive electrodes, which enables a simplified cell structure featuring glass/AZO/perovskite/Spiro-OMeTAD/Au. Optimization of the perovskite layer leads to an excellent and repeatable photovoltaic performance, with the champion cell exhibiting an open-circuit voltage (Voc) of 0.94 V, a short-circuit current (Jsc) of 20.2 mA cm(-2), a fill factor (FF) of 0.67, and an overall power conversion efficiency (PCE) of 12.6% under standard 1 sun illumination. It was also revealed by steady-state and time-resolved photoluminescence that the AZO/perovskite interface resulted in less quenching than that between perovskite and hole transport material.

  13. Differential rotation of plasma in the GOL-3 multiple-mirror trap during injection of a relativistic electron beam

    Science.gov (United States)

    Ivanov, I. A.; Burdakov, A. V.; Burmasov, V. S.; Kuklin, K. N.; Makarov, M. A.; Mekler, K. I.; Polosatkin, S. V.; Postupaev, V. V.; Rovenskikh, A. F.; Sidorov, E. N.; Sinitsky, S. L.; Sudnikov, A. V.

    2017-02-01

    Results of spectral and magnetic diagnostics of plasma differential rotation in the GOL-3 multiplemirror trap are presented. It is shown that the maximum frequency of plasma rotation about the longitudinal axis reaches 0.5 MHz during the injection of a relativistic electron beam into the plasma. The data of two diagnostics agree if there is a region with a higher rotation frequency near the boundary of the electron beam. Plasma differential rotation can be an additional factor stabilizing interchange modes in the GOL-3 facility.

  14. Counter-crossing injection for stable high-quality electron beam generation via laser-plasma interaction

    Energy Technology Data Exchange (ETDEWEB)

    Kotaki, H; Daito, I; Hayashi, Y; Ma, J; Chen, L-M; Kando, M; Esirkepov, T Z; Fukuda, Y; Homma, T; Pirozhkov, A; Koga, J K; Nakajima, K; Daido, H; Bulanov, S V [Advanced Photon Research Center, Japan Atomic Energy Agency, Kizugawa, Kyoto (Japan)], E-mail: kotaki.hideyuki@jaea.go.jp

    2008-05-01

    Counter-crossing injection, which is a realistic setup for applications, by two sub-relativistic laser pulses colliding at an angle of 45 degrees is demonstrated. The collision of the two laser pulses generates a high-quality electron beam with high reproducibility. The generated monoenergetic electron beam has a peak energy of 14.4 MeV, an energy spread of 10.6%, a charge of 21.8 pC, a normalized emittance of 1.6 {pi} mm mrad, and a reproducibility of 50%. The electron beam generation is unfolded with two-dimensional-particle-in-cell simulations. The laser pulses in plasma are self-focused to higher intensity when the laser power is above the threshold for relativistic self-focusing. The collision of the self-focused laser pulses generates a high-quality electron beam with high reproducibility.

  15. Local electronic structure, work function, and line defect dynamics of ultrathin epitaxial ZnO layers on a Ag(1 1 1) surface.

    Science.gov (United States)

    Kumagai, T; Liu, S; Shiotari, A; Baugh, D; Shaikhutdinov, S; Wolf, M

    2016-12-14

    Using combined low-temperature scanning tunneling microscopy and Kelvin probe force microscopy we studied the local electronic structure and work function change of the (0 0 0 1)-oriented epitaxial ZnO layers on a Ag(1 1 1) substrate. Scanning tunneling spectroscopy (STS) revealed that the conduction band minimum monotonically downshifts as the number of the ZnO layers increases up to 4 monolayers (ML). However, it was found by field emission resonance (FER) spectroscopy that the local work function of Ag(1 1 1) slightly decreases for 2 ML thick ZnO but it dramatically changes and drops by about 1.2 eV between 2 and 3 ML, suggesting a structural transformation of the ZnO layer. The spatial variation of the conduction band minimum and the local work function change were visualized at the nanometer scale by mapping the STS and FER intensities. Furthermore, we found that the ZnO layers contained line defects with a few tens of nm long, which can be removed by the injection of a tunneling electron into the conduction band.

  16. Characterization of Li-rich layered oxides by using transmission electron microscope

    Directory of Open Access Journals (Sweden)

    Hu Zhao

    2017-07-01

    Full Text Available Lithium-rich layered oxides (LrLOs deliver extremely high specific capacities and are considered to be promising candidates for electric vehicle and smart grid applications. However, the application of LrLOs needs further understanding of the structural complexity and dynamic evolution of monoclinic and rhombohedral phases, in order to overcome the issues including voltage decay, poor rate capability, initial irreversible capacity loss and etc. The development of aberration correction for the transmission electron microscope and concurrent progress in electron spectroscopy, have fueled rapid progress in the understanding of the mechanism of such issues. New techniques based on the transmission electron microscope are first surveyed, and the applications of these techniques for the study of the structure, migration of transition metal, and the activation of oxygen of LrLOs are then explored in detail, with a particular focus on the mechanism of voltage decay. Keywords: Lithium-ion battery, Transmission electron microscope, Lithium-rich layered oxide, Cathode material

  17. Nanoscale structural and electronic characterization of α-RuCl3 layered compound

    Science.gov (United States)

    Ziatdinov, Maxim; Maksov, Artem; Banerjee, Arnab; Zhou, Wu; Berlijn, Tom; Yan, Jiaqiang; Nagler, Stephen; Mandrus, David; Baddorf, Arthur; Kalinin, Sergei

    The exceptional interplay of spin-orbit effects, Coulomb interaction, and electron-lattice coupling is expected to produce an elaborate phase space of α-RuCl3 layered compound, which to date remains largely unexplored. Here we employ a combination of scanning transmission electron microscopy (STEM) and scanning tunneling microscopy (STM) for detailed evaluation of the system's microscopic structural and electronic orders with a sub-nanometer precision. The STM and STEM measurements are further supported by neutron scattering, X-Ray diffraction, density functional theory (DFT), and multivariate statistical analysis. Our results show a trigonal distortion of Cl octahedral ligand cage along the C3 symmetry axes in each RuCl3 layer. The lattice distortion is limited mainly to the Cl subsystem leaving the Ru honeycomb lattice nearly intact. The STM topographic and spectroscopic characterization reveals an intra unit cell electronic symmetry breaking in a spin-orbit coupled Mott insulating phase on the Cl-terminated surface of α-RuCl3. The associated long-range charge order (CO) pattern is linked to a surface component of Cl cage distortion. We finally discuss a fine structure of CO and its potential relation to variations of average unit cell geometries found in multivariate analysis of STEM data. The research was sponsored by the U.S. Department of Energy.

  18. Control of electronic properties of 2D carbides (MXenes) by manipulating their transition metal layers

    KAUST Repository

    Anasori, Babak

    2016-02-24

    In this study, a transition from metallic to semiconducting-like behavior has been demonstrated in two-dimensional (2D) transition metal carbides by replacing titanium with molybdenum in the outer transition metal (M) layers of M3C2 and M4C3 MXenes. The MXene structure consists of n + 1 layers of near-close packed M layers with C or N occupying the octahedral site between them in an [MX]nM arrangement. Recently, two new families of ordered 2D double transition metal carbides MXenes were discovered, M′2M′′C2 and M′2M′′2C3 – where M′ and M′′ are two different early transition metals, such as Mo, Cr, Ta, Nb, V, and Ti. The M′ atoms only occupy the outer layers and the M′′ atoms fill the middle layers. In other words, M′ atomic layers sandwich the middle M′′–C layers. Using X-ray atomic pair distribution function (PDF) analysis on Mo2TiC2 and Mo2Ti2C3 MXenes, we present the first quantitative analysis of structures of these novel materials and experimentally confirm that Mo atoms are in the outer layers of the [MC]nM structures. The electronic properties of these Mo-containing MXenes are compared with their Ti3C2 counterparts, and are found to be no longer metallic-like conductors; instead the resistance increases mildly with decreasing temperatures. Density functional theory (DFT) calculations suggest that OH terminated Mo–Ti MXenes are semiconductors with narrow band gaps. Measurements of the temperature dependencies of conductivities and magnetoresistances have confirmed that Mo2TiC2Tx exhibits semiconductor-like transport behavior, while Ti3C2Tx is a metal. This finding opens new avenues for the control of the electronic and optical applications of MXenes and for exploring new applications, in which semiconducting properties are required.

  19. Simulation of electronic circuit sensitivity towards humidity using electrochemical data on water layer

    DEFF Research Database (Denmark)

    Joshy, Salil; Verdingovas, Vadimas; Jellesen, Morten Stendahl

    2015-01-01

    Climatic conditions like temperature and humidity have direct influence on the operation of electronic circuits. The effects of temperature on the operation of electronic circuits have been widely investigated, while the effect of humidity and solder flux residues are not well understood including...... the effect on circuit and PCBA (printed circuit board assembly) layout design. This paper elucidates a methodology for analyzing the sensitivity of an electronic circuit based on parasitic circuit analysis using data on electrical property of the water layer formed under humid as well as contaminated...... conditions. Some commonly used circuits are analyzed as case studies and flux related contaminations of PCBA from process is used as an example to show how different flux chemistry and humidity together compromise the circuit functionality....

  20. The electron edge of the low latitude boundary layer during accelerated flow events

    International Nuclear Information System (INIS)

    Gosling, J.T.; Thomsen, M.F.; Bame, S.J.; Onsager, T.G.; Russel, C.T.

    1990-01-01

    Magnetosheath plasma entering the Earth's magnetosphere to populate the low latitude boundary layer, LLBL, is often accelerated to speeds considerably greater than are observed in the adjacent magnetosheath. Measurements made during such accelerated flow events reveal separate electron and ion edges to the LLBL, with the electron edge being found earthward of the ion edge. Plasma electron velocity distributions observed at the earthward edge of the LLBL are often highly structured, exhibiting large asymmetries parallel and antiparallel, as well as perpendicular, to the local magnetic field. These features can consistently be interpreted as time-of-flight effects on recently reconnected field lines, and thus are strong evidence in support of the reconnection interpretation of accelerated plasma flow events

  1. Block Copolymer-Tuned Fullerene Electron Transport Layer Enhances the Efficiency of Perovskite Photovoltaics.

    Science.gov (United States)

    Lin, Hsi-Kuei; Su, Yu-Wei; Chen, Hsiu-Cheng; Huang, Yi-Jiun; Wei, Kung-Hwa

    2016-09-21

    In this study, we enhanced the power conversion efficiency (PCE) of perovskite solar cells by employing an electron transfer layer (ETL) comprising [6,6]phenyl-C61-butyric acid methyl ester (PC61BM) and, to optimize its morphology, a small amount of the block copolymer polystyrene-b-poly(ethylene oxide) (PS-b-PEO), positioned on the perovskite active layer. When incorporating 0.375 wt % PS-b-PEO into PC61BM, the PCE of the perovskite photovoltaic device increased from 9.4% to 13.4%, a relative increase of 43%, because of a large enhancement in the fill factor of the device. To decipher the intricate morphology of the ETL, we used synchrotron grazing-incidence small-angle X-ray scattering for determining the PC61BM cluster size, atomic force microscopy and scanning electron microscopy for probing the surface, and transmission electron microscopy for observing the aggregation of PC61BM in the ETL. We found that the interaction between PS-b-PEO and PC61BM resulted in smaller PC61BM clusters that further aggregated into dendritic structures in some domains, a result of the similar polarities of the PS block and PC61BM; this behavior could be used to tune the morphology of the ETL. The optimal PS-b-PEO-mediated PC61BM cluster size in the ETL was 17 nm, a large reduction from 59 nm for the pristine PC61BM layer. This approach of incorporating a small amount of nanostructured block copolymer into a fullerene allowed us to effectively tune the morphology of the ETL on the perovskite active layer and resulted in enhanced fill factors of the devices and thus their device efficiency.

  2. Local gas injection as a scrape-off layer diagnostic on the Alcator C-Mod tokamak

    International Nuclear Information System (INIS)

    Jablonski, D.F.

    1996-05-01

    A capillary puffing array has been installed on Alcator C-Mod which allows localized introduction of gaseous species in the scrape-off layer. This system has been utilized in experiments to elucidate both global and local properties of edge transport. Deuterium fueling and recycling impurity screening are observed to be characterized by non-dimensional screening efficiencies which are independent of the location of introduction. In contrast, the behavior of non-recycling impurities is seen to be characterized by a screening time which is dependent on puff location. The work of this thesis has focused on the use of the capillary array with a camera system which can view impurity line emission plumes formed in the region of an injection location. The ionic plumes observed extend along the magnetic field line with a comet-like asymmetry, indicative of background plasma ion flow. The flow is observed to be towards the nearest strike-point, independent of x-point location, magnetic field direction, and other plasma parameters. While the axes of the plumes are generally along the field line, deviations are seen which indicate cross-field ion drifts. A quasi-two dimensional fluid model has been constructed to use the plume shapes of the first charge state impurity ions to extract information about the local background plasma, specifically the temperature, parallel flow velocity, and radial electric field. Through comparisons of model results with those of a three dimensional Monte Carlo code, and comparisons of plume extracted parameters with scanning probe measurements, the efficacy of the model is demonstrated. Plume analysis not only leads to understandings of local edge impurity transport, but also presents a novel diagnostic technique

  3. Local gas injection as a scrape-off layer diagnostic on the Alcator C-Mod tokamak

    Energy Technology Data Exchange (ETDEWEB)

    Jablonski, David F. [Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

    1996-05-01

    A capillary puffing array has been installed on Alcator C-Mod which allows localized introduction of gaseous species in the scrape-off layer. This system has been utilized in experiments to elucidate both global and local properties of edge transport. Deuterium fueling and recycling impurity screening are observed to be characterized by non-dimensional screening efficiencies which are independent of the location of introduction. In contrast, the behavior of non-recycling impurities is seen to be characterized by a screening time which is dependent on puff location. The work of this thesis has focused on the use of the capillary array with a camera system which can view impurity line emission plumes formed in the region of an injection location. The ionic plumes observed extend along the magnetic field line with a comet-like asymmetry, indicative of background plasma ion flow. The flow is observed to be towards the nearest strike-point, independent of x-point location, magnetic field direction, and other plasma parameters. While the axes of the plumes are generally along the field line, deviations are seen which indicate cross-field ion drifts. A quasi-two dimensional fluid model has been constructed to use the plume shapes of the first charge state impurity ions to extract information about the local background plasma, specifically the temperature, parallel flow velocity, and radial electric field. Through comparisons of model results with those of a three dimensional Monte Carlo code, and comparisons of plume extracted parameters with scanning probe measurements, the efficacy of the model is demonstrated. Plume analysis not only leads to understandings of local edge impurity transport, but also presents a novel diagnostic technique.

  4. Ion-acoustic double layers in magnetized positive-negative ion plasmas with nonthermal electrons

    Science.gov (United States)

    El-Labany, S. K.; Sabry, R.; El-Taibany, W. F.; Elghmaz, E. A.

    2012-07-01

    The nonlinear ion-acoustic double layers (IADLs) in a warm magnetoplasma with positive-negative ions and nonthermal electrons are investigated. For this purpose, the hydrodynamic equations for the positive-negative ions, nonthermal electron density distribution, and the Poisson equation are used to derive a modified Zakharov-Kuznetsov (MZK) equation, in the small amplitude regime. It is found that compressive and rarefactive IADLs strongly depend on the mass and density ratios of the negative-to-positive ions as well as the nonthermal electron parameter. Also, it is shown that there are one critical value for the density ratio of the negative-to-positive ions ( ν), the ratio between unperturbed electron-to-positive ion density ( μ), and the nonthermal electron parameter ( β), which decide the existence of positive and negative IADLs. The present study is applied to examine the small amplitude nonlinear IADL excitations for the (H+, O2-) and (H+,H-) plasmas, where they are found in the D- and F-regions of the Earth's ionosphere. This investigation should be helpful in understanding the salient features of the nonlinear IADLs in either space or laboratory plasmas where two distinct groups of ions and non-Boltzmann distributed electrons are present.

  5. 3rd Workshop in Woerlitz. Functional layers - organic layers for electronic and optoelectronics; 3. Woerlitzer Workshop: Funktionelle Schichten - Organische Schichten fuer Elektronik und Optoelektronik

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2002-05-15

    The following lectures were given: Polytronic systems for economic serial production of electronic components (K.Bock, G.Klink); Organic electroluminescence displays - global state (H.Vestweber et al); Synthesis of novel materials for organic components (J.Salbeck, K.-H.Weinfurtner); OVPD and application of optical spectroscopic methods for growth control (D.Zahn et al); OLED displays: Aspects of manufacture (D.Heithecker et al); Vertical in-line deposition of organic layers onto large-scale substrates (J.Amelung et al); Polytronic - polymers as basis for novel electronics (A.Wedel et al); Dye storing layers for DVD+-R (B.Schulze); Transparent conductive layers for OLEDs (A.Elschner et al); Polyaniline, a conductive polymer rsp. organic metal for OLEDs and 'plastic electronics' (B.Wessling et al); Trends for plastics applications for displays in the future (E.Foltin); Design of molecular interactions for optimizing thin molecular semiconductive layers (D.Schlettwein, W.Michaelis); Electronic properties of interfaces between organic semiconductors and metals (M.Knupfer et l); Electron spectroscopic and electric investigations of organic/inorganic interfaces (D.Zahn et al); Spectroscopic measurements on ultrathin organic layers (T.Fritz et al); Nanostructuring and chemical functionalization of surfaces (A.Goelzhaeuser et al); Organic low-k materials for microelectronics (M.Uhlig et al); Polymer-based wave guides for integrated optical components (C.Dryer et al).

  6. Current drive with fast waves, electron cyclotron waves, and neutral injection in the DIII-D tokamak

    International Nuclear Information System (INIS)

    Prater, R.; Petty, C.C.; Pinsker, R.I.

    1993-01-01

    Current drive experiments have been performed on the DIII-D tokamak using fast waves, electron cyclotron waves, and neutral injection. Fast wave experiments were performed using a 4-strap antenna with 1 MW of power at 60 MHz. These experiments showed effective heating of electrons, with a global heating efficiency equivalent to that of neutral injection even when the single pass damping was calculated to be as small as 5%. The damping was probably due to the effect of multiple passes of the wave through the plasma. Fast wave current drive experiments were performed with a toroidally directional phasing of the antenna straps. Currents driven by fast wave current drive (FWCD) in the direction of the main plasma current of up to 100 kA were found, not including a calculated 40 kA of bootstrap current. Experiments with FWCD in the counter current direction showed little current drive. In both cases, changes in the sawtooth behavior and the internal inductance qualitatively support the measurement of FWCD. Experiments on electron cyclotron current drive have shown that 100 kA of current can be driven by 1 MW of power at 60 GHz. Calculations with a Fokker-Planck code show that electron cyclotron current drive (ECCD) can be well predicted when the effects of electron trapping and of the residual electric field are included. Experiments on driving current with neutral injection showed that effective current drive could be obtained and discharges with full current drive were demonstrated. Interestingly, all of these methods of current drive had about the same efficiency. (Author)

  7. Electronic spin transport and spin precession in single graphene layers at room temperature.

    Science.gov (United States)

    Tombros, Nikolaos; Jozsa, Csaba; Popinciuc, Mihaita; Jonkman, Harry T; van Wees, Bart J

    2007-08-02

    Electronic transport in single or a few layers of graphene is the subject of intense interest at present. The specific band structure of graphene, with its unique valley structure and Dirac neutrality point separating hole states from electron states, has led to the observation of new electronic transport phenomena such as anomalously quantized Hall effects, absence of weak localization and the existence of a minimum conductivity. In addition to dissipative transport, supercurrent transport has also been observed. Graphene might also be a promising material for spintronics and related applications, such as the realization of spin qubits, owing to the low intrinsic spin orbit interaction, as well as the low hyperfine interaction of the electron spins with the carbon nuclei. Here we report the observation of spin transport, as well as Larmor spin precession, over micrometre-scale distances in single graphene layers. The 'non-local' spin valve geometry was used in these experiments, employing four-terminal contact geometries with ferromagnetic cobalt electrodes making contact with the graphene sheet through a thin oxide layer. We observe clear bipolar (changing from positive to negative sign) spin signals that reflect the magnetization direction of all four electrodes, indicating that spin coherence extends underneath all of the contacts. No significant changes in the spin signals occur between 4.2 K, 77 K and room temperature. We extract a spin relaxation length between 1.5 and 2 mum at room temperature, only weakly dependent on charge density. The spin polarization of the ferromagnetic contacts is calculated from the measurements to be around ten per cent.

  8. Electron and Hole Transport Layers: Their Use in Inverted Bulk Heterojunction Polymer Solar Cells

    Directory of Open Access Journals (Sweden)

    Sandro Lattante

    2014-03-01

    Full Text Available Bulk heterojunction polymer solar cells (BHJ PSCs are very promising organic-based devices for low-cost solar energy conversion, compatible with roll-to-roll or general printing methods for mass production. Nevertheless, to date, many issues should still be addressed, one of these being the poor stability in ambient conditions. One elegant way to overcome such an issue is the so-called “inverted” BHJ PSC, a device geometry in which the charge collection is reverted in comparison with the standard geometry device, i.e., the electrons are collected by the bottom electrode and the holes by the top electrode (in contact with air. This reverted geometry allows one to use a high work function top metal electrode, like silver or gold (thus avoiding its fast oxidation and degradation, and eliminates the need of a polymeric hole transport layer, typically of an acidic nature, on top of the transparent metal oxide bottom electrode. Moreover, this geometry is fully compatible with standard roll-to-roll manufacturing in air and is less demanding for a good post-production encapsulation process. To date, the external power conversion efficiencies of the inverted devices are generally comparable to their standard analogues, once both the electron transport layer and the hole transport layer are fully optimized for the particular device. Here, the most recent results on this particular optimization process will be reviewed, and a general outlook regarding the inverted BHJ PSC will be depicted.

  9. Ultrasonically spray coated silver layers from designed precursor inks for flexible electronics

    Science.gov (United States)

    Marchal, W.; Vandevenne, G.; D'Haen, J.; Almeida, A. Calmont de Andrade; Durand Sola, M. A., Jr.; van den Ham, E. J.; Drijkoningen, J.; Elen, K.; Deferme, W.; Van Bael, M. K.; Hardy, A.

    2017-05-01

    Integration of electronic circuit components onto flexible materials such as plastic foils, paper and textiles is a key challenge for the development of future smart applications. Therefore, conductive metal features need to be deposited on temperature sensitive substrates in a fast and straightforward way. The feasibility of these emerging (nano-) electronic technologies depends on the availability of well-designed deposition techniques and on novel functional metal inks. As ultrasonic spray coating (USSC) is one of the most promising techniques to meet the above requirements, innovative metal organic decomposition (MOD) inks are designed to deposit silver features on plastic foils. Various amine ligands were screened and their influence on the ink stability and the characteristics of the resulting metal depositions were evaluated to determine the optimal formulation. Eventually, silver layers with excellent performance in terms of conductivity (15% bulk silver conductivity), stability, morphology and adhesion could be obtained, while operating in a very low temperature window of 70 °C-120 °C. Moreover, the optimal deposition conditions were determined via an in-depth analysis of the ultrasonically sprayed silver layers. Applying these tailored MOD inks, the USSC technique enabled smooth, semi-transparent silver layers with a tunable thickness on large areas without time-consuming additional sintering steps after deposition. Therefore, this novel combination of nanoparticle-free Ag-inks and the USSC process holds promise for high throughput deposition of highly conductive silver features on heat sensitive substrates and even 3D objects.

  10. The effects of photovoltaic electricity injection into microgrids: Combination of Geographical Information Systems, multicriteria decision methods and electronic control modeling

    International Nuclear Information System (INIS)

    Roa-Escalante, Gino de Jesús; Sánchez-Lozano, Juan Miguel; Faxas, Juan-Gabriel; García-Cascales, M. Socorro; Urbina, Antonio

    2015-01-01

    Highlights: • Geographical Information Systems can be used as a support to classify the viable locations for photovoltaic facilities. • Multicriteria decision methods are useful tools to choose the optimal locations for photovoltaic systems. • Variations of photovoltaic power injected into the grid have been calculated for the optimum locations. • Grid stabilization can be achieved within 500 ms with electronic control strategies. - Abstract: This article presents a model to calculate the impact on the grid of the injection of electricity generated from photovoltaic systems. The methodology combines the use of Geographical Information System tools to classify the optimal locations for the installation of photovoltaic systems with the calculation of the impact into microgrids of the electricity generated in such locations. The case study is focused on Murcia region, in South-east Spain, and on medium size photovoltaic systems. The locations have been selected from a Geographical Information System database including several parameters, and evaluated and classified using a fuzzy version of the multicriteria decision method called Technique for Order Preference by Similarity to Ideal Solution. In order to obtain the weights for the criteria used in the evaluation, the Analytic Hierarchy Process has been used. Finally, using meteorological data from a small set of possible locations, the impact on the grid arising from the injection of power generated from photovoltaic systems that are connected to the grid via a module implementing different control electronic strategies has been calculated. Different electronic control strategies have been modeled to demonstrate that stabilization of the electrical parameters of a microgrid can be obtained within 500 ms in all cases, even when a relatively large power surge, or slower variations, are injected into the grid from the medium size photovoltaic systems

  11. Endoscopic full-thickness resection of a lateral spreading rectal tumor after unplanned injection of dilute hyaluronic acid into the subserosal layer (with video).

    Science.gov (United States)

    Konuma, H; Fu, K I; Konuma, I; Ueyama, H; Takahashi, T; Ogura, K; Miyazaki, A; Watanabe, S

    2012-06-01

    A 74-year-old woman underwent colonoscopy for investigation of a liver tumor. A lateral spreading tumor of the non-granular type (LST-NG), 25 mm in diameter, was detected at the rectosigmoid junction. As magnifying image-enhanced colonoscopy suggested a tubulovillous adenoma, endoscopic mucosal resection (EMR) was chosen for removal of the LST-NG. The lesion was effectively and evenly lifted after injection of 0.4% hyaluronic acid diluted with glycerol in the ratio of 1:1. A small amount of indigo-carmine dye was also added for coloration of the plane of resection. The lesion was completely removed en bloc. Although a blue-colored layer was identified in the resection defect, a small amount of a whitish layer was detected above the blue layer. The muscle layer was clearly located on the underside of the resected polyp. A total of 14 endoclips were used to close the defect completely. The patient was successfully treated conservatively without surgery. Histology of the resected specimen showed that it contained a tubulovillous adenoma with the submucosal layer and both layers of the muscularis propria. The surgical margin was free of neoplastic change horizontally and vertically. To the best of our knowledge, this is the first case report of full-thickness resection associated with EMR after unplanned injection of dilute hyaluronic acid into the subserosal layer rather than the intended submucosal layer. We describe how to promptly recognize this complication during colonoscopy, in order to achieve immediate closure of the defect, with the identification of a "mirror target sign" on the colonic wall.

  12. Electron-transporting layer doped with cesium azide for high-performance phosphorescent and tandem white organic light-emitting devices

    Science.gov (United States)

    Yu, Yaoyao; Chen, Xingming; Jin, Yu; Wu, Zhijun; Yu, Ye; Lin, Wenyan; Yang, Huishan

    2017-07-01

    Cesium azide was employed as an effective n-dopant in the electron-transporting layer (ETL) of organic light-emitting devices (OLEDs) owing to its low deposition temperature and high ambient stability. By doping cesium azide onto 4,7-diphenyl-1,10-phenanthroline, a green phosphorescent OLED having best efficiencies of 66.25 cd A-1, 81.22 lm W-1 and 18.82% was realized. Moreover, the efficiency roll-off from 1000 cd m-2 to 10 000 cd m-2 is only 12.9%, which is comparable with or even lower than that of devices utilizing the co-host system. Physical mechanisms for the improvement of device performance were studied in depth by analyzing the current density-voltage (J-V) characteristics of the electron-only devices. In particular, by comparing the J-V characteristics of the electron-only devices instead of applying the complicated ultraviolet photoelectron spectrometer measurements, we deduced the decrease in barrier height for electron injection at the ETL/cathode contact. Finally, an efficient tandem white OLED utilizing the n-doped layer in the charge generation unit (CGU) was constructed. As far as we know, this is the first report on the application of this CGU for fabricating tandem white OLEDs. The emissions of the tandem device are all in the warm white region from 1213 cd m-2 to 10870 cd m-2, as is beneficial to the lighting application.

  13. Field electron emission characteristics and physical mechanism of individual single-layer graphene.

    Science.gov (United States)

    Xiao, Zhiming; She, Juncong; Deng, Shaozhi; Tang, Zikang; Li, Zhibing; Lu, Jianming; Xu, Ningsheng

    2010-11-23

    Due to its difficulty, experimental measurement of field emission from a single-layer graphene has not been reported, although field emission from a two-dimensional (2D) regime has been an attractive topic. The open surface and sharp edge of graphene are beneficial for field electron emission. A 2D geometrical effect, such as massless Dirac fermion, can lead to new mechanisms in field emission. Here, we report our findings from in situ field electron emission characterization on an individual singe-layer graphene and the understanding of the related mechanism. The measurement of field emission from the edges was done using a microanode probe equipped in a scanning electron microscope. We show that repeatable stable field emission current can be obtained after a careful conditioning process. This enables us to examine experimentally the typical features of the field emission from a 2D regime. We plot current versus applied field data, respectively, in ln(I/E(3/2)) ∼ 1/E and ln(I/E(3)) ∼ 1/E(2) coordinates, which have recently been proposed for field emission from graphene in high- and low-field regimes. It is observed that the plots all exhibit an upward bending feature, revealing that the field emission processes undergo from a low- to high-field transition. We discuss with theoretical analysis the physical mechanism responsible for the new phenomena.

  14. Electronic origin of high-temperature superconductivity in single-layer FeSe superconductor.

    Science.gov (United States)

    Liu, Defa; Zhang, Wenhao; Mou, Daixiang; He, Junfeng; Ou, Yun-Bo; Wang, Qing-Yan; Li, Zhi; Wang, Lili; Zhao, Lin; He, Shaolong; Peng, Yingying; Liu, Xu; Chen, Chaoyu; Yu, Li; Liu, Guodong; Dong, Xiaoli; Zhang, Jun; Chen, Chuangtian; Xu, Zuyan; Hu, Jiangping; Chen, Xi; Ma, Xucun; Xue, Qikun; Zhou, X J

    2012-07-03

    The recent discovery of high-temperature superconductivity in iron-based compounds has attracted much attention. How to further increase the superconducting transition temperature (T(c)) and how to understand the superconductivity mechanism are two prominent issues facing the current study of iron-based superconductors. The latest report of high-T(c) superconductivity in a single-layer FeSe is therefore both surprising and significant. Here we present investigations of the electronic structure and superconducting gap of the single-layer FeSe superconductor. Its Fermi surface is distinct from other iron-based superconductors, consisting only of electron-like pockets near the zone corner without indication of any Fermi surface around the zone centre. Nearly isotropic superconducting gap is observed in this strictly two-dimensional system. The temperature dependence of the superconducting gap gives a transition temperature T(c)~ 55 K. These results have established a clear case that such a simple electronic structure is compatible with high-T(c) superconductivity in iron-based superconductors.

  15. Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics.

    Science.gov (United States)

    Cheng, Rui; Jiang, Shan; Chen, Yu; Liu, Yuan; Weiss, Nathan; Cheng, Hung-Chieh; Wu, Hao; Huang, Yu; Duan, Xiangfeng

    2014-10-08

    Two-dimensional layered materials, such as molybdenum disulfide, are emerging as an exciting material system for future electronics due to their unique electronic properties and atomically thin geometry. Here we report a systematic investigation of MoS2 transistors with optimized contact and device geometry, to achieve self-aligned devices with performance including an intrinsic gain over 30, an intrinsic cut-off frequency fT up to 42 GHz and a maximum oscillation frequency fMAX up to 50 GHz, exceeding the reported values for MoS2 transistors to date (fT~0.9 GHz, fMAX~1 GHz). Our results show that logic inverters or radio frequency amplifiers can be formed by integrating multiple MoS2 transistors on quartz or flexible substrates with voltage gain in the gigahertz regime. This study demonstrates the potential of two-dimensional layered semiconductors for high-speed flexible electronics.

  16. Layer-dependent quantum cooperation of electron and hole states in the anomalous semimetal WTe2

    Science.gov (United States)

    Das, Pranab Kumar; di Sante, D.; Vobornik, I.; Fujii, J.; Okuda, T.; Bruyer, E.; Gyenis, A.; Feldman, B. E.; Tao, J.; Ciancio, R.; Rossi, G.; Ali, M. N.; Picozzi, S.; Yadzani, A.; Panaccione, G.; Cava, R. J.

    2016-02-01

    The behaviour of electrons and holes in a crystal lattice is a fundamental quantum phenomenon, accounting for a rich variety of material properties. Boosted by the remarkable electronic and physical properties of two-dimensional materials such as graphene and topological insulators, transition metal dichalcogenides have recently received renewed attention. In this context, the anomalous bulk properties of semimetallic WTe2 have attracted considerable interest. Here we report angle- and spin-resolved photoemission spectroscopy of WTe2 single crystals, through which we disentangle the role of W and Te atoms in the formation of the band structure and identify the interplay of charge, spin and orbital degrees of freedom. Supported by first-principles calculations and high-resolution surface topography, we reveal the existence of a layer-dependent behaviour. The balance of electron and hole states is found only when considering at least three Te-W-Te layers, showing that the behaviour of WTe2 is not strictly two dimensional.

  17. Imaging Electron Motion in a Few Layer MoS2 Device

    Science.gov (United States)

    Bhandari, S.; Wang, K.; Watanabe, K.; Taniguchi, T.; Kim, P.; Westervelt, R. M.

    2017-06-01

    Ultrathin sheets of MoS2 are a newly discovered 2D semiconductor that holds great promise for nanoelectronics. Understanding the pattern of current flow will be crucial for developing devices. In this talk, we present images of current flow in MoS2 obtained with a Scanned Probe Microscope (SPM) cooled to 4 K. We previously used this technique to image electron trajectories in GaAs/AlGaAs heterostructures and graphene. The charged SPM tip is held just above the sample surface, creating an image charge inside the device that scatters electrons. By measuring the change in resistance ΔR while the tip is raster scanned above the sample, an image of electron flow is obtained. We present images of electron flow in an MoS2 device patterned into a hall bar geometry. A three-layer MoS2 sheet is encased by two hBN layers, top and bottom, and patterned into a hall-bar with multilayer graphene contacts. An SPM image shows the current flow pattern from the wide contact at the end of the device for a Hall density n = 1.3×1012 cm-2. The SPM tip tends to block flow, increasing the resistance R. The pattern of flow was also imaged for a narrow side contact on the sample. At density n = 5.4×1011 cm-2; the pattern seen in the SPM image is similar to the wide contact. The ability to image electron flow promises to be very useful for the development of ultrathin devices from new 2D materials.

  18. Phase diagram of the layered oxide SnO: GW and electron-phonon studies

    Science.gov (United States)

    Chen, Peng-Jen; Jeng, Horng-Tay

    2015-11-01

    First-principles calculations are performed to study the electronic properties and the electron-phonon interactions of the layered oxide semiconductor SnO. In addition to the high hole mobility that makes SnO a promising material in electronics, it has recently been reported that the semimetallic phase under pressure is superconducting. The superconducting Tc curve exhibits a dome-like feature under pressure and reaches the maximum of 1.4 K at p = 9.2 GPa. Both its crystal structure and the dome-like Tc curve are reminiscent of the Fe-based superconductor FeSe. Motivated by this observation, we investigate the electronic, phonon, and their interactions in SnO using first-principles schemes. GW approximation is adopted to correct the underestimated band gaps, including real and continuous band gaps in the semiconducting and semimetallic phases. The phase diagram showing the semiconductor-to-semimetal transition and the Tc curve has been successfully reproduced. Detailed analysis of the electron-phonon interactions demonstrate the importance of the out-of-plane motions of O atoms and the Sn-s lone pairs for the superconductivity to occur. Our method combining GW and e-ph calculations can be further extended to the study of other materials that undergo insulator-to-superconductor phase transition.

  19. Anomalous thermodynamic properties of the electron accumulation layer in SrTiO3

    Science.gov (United States)

    Sammon, Michael; Fu, Han; Shklovskii, B. I.

    2017-10-01

    Due to the nonlinear dielectric response within SrTiO3 (STO), an accumulation layer created by positive charges at the surface of the STO sample (x =0 ) has an electron density profile n (x ) that slowly decays as 1 /x12 /7 . Here we show that the long tail of n (x ) causes the magnetization and the specific heat of the accumulation layer to diverge at large x . We explore the truncation of the tail by the finite sample width W , the transition from the nonlinear to linear dielectric response with dielectric constant κ , and the use of a back gate with a negative voltage -|V | . We find that both the magnetization and specific heat are anomalously large and obey nontrivial power law dependences on W , κ , or |V |. We conclude with a discussion of how the capacitance as a function of the back gate voltage may be used to study the shape of the n (x ) tail in thin samples.

  20. Electron-temperature-gradient-induced instability in tokamak scrape-off layers

    International Nuclear Information System (INIS)

    Berk, H.L.; Ryutov, D.D.; Tsidulko, Y.A.; Xu, X.Q.

    1992-08-01

    An electron temperature instability driven by the Kunkel-Guillory sheath impedance, has been applied to the scrape-off layer of tokamaks. The formalism has been generalized to more fully account for parallel wavelength dynamics, to differentiate between electromagnetic and electrostatic perturbations and to account for particle recycling effects. It is conjectured that this conducting wall instability leads to edge fluctuations in tokamaks that produce scrape-off widths of many ion Larmor radii ≅10. The predicted instability characteristics correlate somewhat with DIII-D edge fluctuation data, and the scrape-off layer width in the DIII-D experiment agrees with theoretical estimates that can be derived from mixing lenght theory

  1. Sputter Deposited TiOx Thin-Films as Electron Transport Layers in Organic Solar Cells

    DEFF Research Database (Denmark)

    Mirsafaei, Mina; Bomholt Jensen, Pia; Lakhotiya, Harish

    solar cells that eliminates the need for light soaking and still allows for integration on flexible plastic substrates, which is beneficial for roll-to-roll mass production of flexible organic solar cells. 1. Steim, R.; Kogler, F. R.; Brabec, C. J., Interface materials for organic solar cells. Journal......The use of interfacial layers in organic solar cells has been investigated intensively over the past years, as it has a strong impact on both the power conversion efficiency and stability of the devices. Among the systems investigated are for example alkali salts, ionic liquids, neutral polymers...... transparency and favorable energy-level alignment with many commonly used electron-acceptor materials. There are several methods available for fabricating compact TiOx thin-films for use in organic solar cells, including sol-gel solution processing, spray pyrolysis and atomic-layer deposition; however...

  2. Liquid exfoliation of solvent-stabilized few-layer black phosphorus for applications beyond electronics

    Science.gov (United States)

    Hanlon, Damien; Backes, Claudia; Doherty, Evie; Cucinotta, Clotilde S.; Berner, Nina C.; Boland, Conor; Lee, Kangho; Harvey, Andrew; Lynch, Peter; Gholamvand, Zahra; Zhang, Saifeng; Wang, Kangpeng; Moynihan, Glenn; Pokle, Anuj; Ramasse, Quentin M.; McEvoy, Niall; Blau, Werner J.; Wang, Jun; Abellan, Gonzalo; Hauke, Frank; Hirsch, Andreas; Sanvito, Stefano; O'Regan, David D.; Duesberg, Georg S.; Nicolosi, Valeria; Coleman, Jonathan N.

    2015-10-01

    Few-layer black phosphorus (BP) is a new two-dimensional material which is of great interest for applications, mainly in electronics. However, its lack of environmental stability severely limits its synthesis and processing. Here we demonstrate that high-quality, few-layer BP nanosheets, with controllable size and observable photoluminescence, can be produced in large quantities by liquid phase exfoliation under ambient conditions in solvents such as N-cyclohexyl-2-pyrrolidone (CHP). Nanosheets are surprisingly stable in CHP, probably due to the solvation shell protecting the nanosheets from reacting with water or oxygen. Experiments, supported by simulations, show reactions to occur only at the nanosheet edge, with the rate and extent of the reaction dependent on the water/oxygen content. We demonstrate that liquid-exfoliated BP nanosheets are potentially useful in a range of applications from ultrafast saturable absorbers to gas sensors to fillers for composite reinforcement.

  3. Liquid exfoliation of solvent-stabilized few-layer black phosphorus for applications beyond electronics

    Science.gov (United States)

    Hanlon, Damien; Backes, Claudia; Doherty, Evie; Cucinotta, Clotilde S.; Berner, Nina C.; Boland, Conor; Lee, Kangho; Harvey, Andrew; Lynch, Peter; Gholamvand, Zahra; Zhang, Saifeng; Wang, Kangpeng; Moynihan, Glenn; Pokle, Anuj; Ramasse, Quentin M.; McEvoy, Niall; Blau, Werner J.; Wang, Jun; Abellan, Gonzalo; Hauke, Frank; Hirsch, Andreas; Sanvito, Stefano; O'Regan, David D.; Duesberg, Georg S.; Nicolosi, Valeria; Coleman, Jonathan N.

    2015-01-01

    Few-layer black phosphorus (BP) is a new two-dimensional material which is of great interest for applications, mainly in electronics. However, its lack of environmental stability severely limits its synthesis and processing. Here we demonstrate that high-quality, few-layer BP nanosheets, with controllable size and observable photoluminescence, can be produced in large quantities by liquid phase exfoliation under ambient conditions in solvents such as N-cyclohexyl-2-pyrrolidone (CHP). Nanosheets are surprisingly stable in CHP, probably due to the solvation shell protecting the nanosheets from reacting with water or oxygen. Experiments, supported by simulations, show reactions to occur only at the nanosheet edge, with the rate and extent of the reaction dependent on the water/oxygen content. We demonstrate that liquid-exfoliated BP nanosheets are potentially useful in a range of applications from ultrafast saturable absorbers to gas sensors to fillers for composite reinforcement. PMID:26469634

  4. LPG gaseous phase electronic port injection on performance, emission and combustion characteristics of Lean Burn SI Engine

    Science.gov (United States)

    Bhasker J, Pradeep; E, Porpatham

    2016-08-01

    Gaseous fuels have always been established as an assuring way to lessen emissions in Spark Ignition engines. In particular, LPG resolved to be an affirmative fuel for SI engines because of their efficient combustion properties, lower emissions and higher knock resistance. This paper investigates performance, emission and combustion characteristics of a microcontroller based electronic LPG gaseous phase port injection system. Experiments were carried out in a single cylinder diesel engine altered to behave as SI engine with LPG as fuel at a compression ratio of 10.5:1. The engine was regulated at 1500 rpm at a throttle position of 20% at diverse equivalence ratios. The test results were compared with that of the carburetion system. The results showed that there was an increase in brake power output and brake thermal efficiency with LPG gas phase injection. There was an appreciable extension in the lean limit of operation and maximum brake power output under lean conditions. LPG injection technique significantly reduces hydrocarbon and carbon monoxide emissions. Also, it extremely enhances the rate of combustion and helps in extending the lean limit of LPG. There was a minimal increase of NOx emissions over the lean operating range due to higher temperature. On the whole it is concluded that port injection of LPG is best suitable in terms of performance and emission for LPG fuelled lean burn SI engine.

  5. Electron Transport in SrTio3 Accumulation Layers and Semiconductor Nanocrystal Films

    Science.gov (United States)

    Fu, Han

    In this thesis, we study two subjects: SrTiO3 (STO) accumulation layers and films made of semiconductor nanocrystals (NCs), which are important for technological applications. We start from the low temperature conductivity of electron accumulation layers induced by the very strong electric field at the surface of STO sample. Due to the strongly nonlinear lattice dielectric response, the three-dimensional density of electrons n(z) in such a layer decays with the distance from the surface z very slowly as n(z) ≃ 1/z12/7 . We show that when the mobility is limited by the surface scattering the contribution of such a tail to the conductivity diverges at large z because of growing time electrons need to reach the surface. We explore truncation of this divergence by the finite sample width, by the bulk scattering rate, by the back gate voltage, or by the crossover to the bulk linear dielectric response with the dielectric constant kappa. As a result we arrive at the anomalously large mobility, which depends not only on the rate of the surface scattering, but also on the physics of truncation. Similar anomalous behavior is found for the Hall factor, the magnetoresistance, and the thermopower. For the second part, we extend to the cases of spherical and cylindrical geometries, and more complicated planar structures. For the planar case, we study overlapping accumulation layers in GdTiO3/STO/GdTiO 3 quantum wells and electron gases created by spill-out from NSTO (heavily n-type doped STO) layers into STO. Generalization of our approach to a spherical donor cluster creating a big Thomas-Fermi atom with electrons in STO brings us to the problem of supercharged nuclei. It is known that for an atom with nuclear charge Ze, where Z > 170, electrons collapse onto the nucleus resulting in a net charge Zn theories of roughness scattering so far dealt only with the small-density single subband two-dimensional (2D) electron gas. Here we develop a theory of roughness scattering

  6. Transient phenomena during electron beam injection in the Saclay 45 MeV accelerator; Regimes transitoires a l'injection du faisceau d'electrons dans l'accelerateur 45 MeV de Saclay

    Energy Technology Data Exchange (ETDEWEB)

    Marcou, J.; Papiernik, A.; Wartski, L. [Institut d' Electronique Fondamentale de la Faculte des Sciences d' Orsay, 91 (France); Bolore, M.; Filippi, G.; Roland, S. [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1969-07-01

    The principal features of transient phenomena, when electron beams are injected in a constant field linear accelerator, are analysed and interpreted by the use of a simple theory. Influence of these transient phenomena on the energy of accelerated particles is observed using a relatively precise method. For very large beam currents, non linear phenomena due to beam deformation can be exhibited, when the electron velocity is not exactly equal to the light velocity. (author) [French] Les principaux aspects des regimes transitoires a l'injection du faisceau d'electrons dans un accelerateur lineaire a champ constant sont mis en evidence et interpretes a l'aide d'une theorie simplifiee. L'influence de ces regimes transitoires sur l'energie des particules accelerees est observee par une methode relativement precise. Lorsque le courant faisceau est tres eleve, on montre que des phenomenes non lineaires dus a la deformation du courant peuvent apparaitre si la vitesse du faisceau n'est pas suffisamment proche de la vitesse de la lumiere. (auteur)

  7. Beam-plasma interaction in case of injection of the electron beam to the symmetrically open plasma system

    International Nuclear Information System (INIS)

    Opanasenko, A.V.; Romanyuk, L.I.

    1992-01-01

    A beam-plasma interaction at the entrance of the symmetrically open plasma system with an electron beam injected through it is investigated. An ignition of the plasma-beam discharge on waves of upper hybrid dispersion branch of a magnetoactive plasma is found in the plasma penetrating into the vacuum contrary to the beam. It is shown that the beam-plasma discharge is localized in the inhomogeneous penetrating plasma in the zone where only these waves exist. Regularities of the beam-plasma discharge ignition and manifestation are described. It is determined that the electron beam crossing the discharge zone leads to the strong energy relaxation of the beam. It is shown possible to control the beam-plasma discharge ignition by changing the potential of the electron beam collector. (author)

  8. Measurement of runaway electron energy distribution function during high-Z gas injection into runaway electron plateaus in DIII-Da)

    Energy Technology Data Exchange (ETDEWEB)

    Hollmann, E. M. [University of California—San Diego, 9500 Gilman Dr., La Jolla, California 92093, USA; Parks, P. B. [General Atomics, PO Box 85608, San Diego, California 92186, USA; Commaux, N. [Oak Ridge National Laboratory, PO Box 2008, Oak Ridge, Tennessee 37831, USA; Eidietis, N. W. [General Atomics, PO Box 85608, San Diego, California 92186, USA; Moyer, R. A. [University of California—San Diego, 9500 Gilman Dr., La Jolla, California 92093, USA; Shiraki, D. [Oak Ridge National Laboratory, PO Box 2008, Oak Ridge, Tennessee 37831, USA; Austin, M. E. [Institute for Fusion Studies, University of Texas—Austin, 2100 San Jacinto Blvd, Austin, Texas 78712, USA; Lasnier, C. J. [Lawrence Livermore National Laboratory, 7000 East Ave, Livermore, California 94550, USA; Paz-Soldan, C. [General Atomics, PO Box 85608, San Diego, California 92186, USA; Rudakov, D. L. [University of California—San Diego, 9500 Gilman Dr., La Jolla, California 92093, USA

    2015-05-01

    The evolution of the runaway electron (RE) energy distribution function fεfε during massive gas injection into centered post-disruption runaway electron plateaus has been reconstructed. Overall, fεfε is found to be much more skewed toward low energy than predicted by avalanche theory. The reconstructions also indicate that the RE pitch angle θ is not uniform, but tends to be large at low energies and small θ ~0.1–0.2 at high energies. Overall power loss from the RE plateau appears to be dominated by collisions with background free and bound electrons, leading to line radiation. However, the drag on the plasma current appears to be dominated by collisions with impurity ions in most cases. Synchrotron emission appears not to be significant for overall RE energy dissipation but may be important for limiting the peak RE energy.

  9. Adsorption and electronic properties of pentacene on thin dielectric decoupling layers

    Directory of Open Access Journals (Sweden)

    Sebastian Koslowski

    2017-07-01

    Full Text Available With the increasing use of thin dielectric decoupling layers to study the electronic properties of organic molecules on metal surfaces, comparative studies are needed in order to generalize findings and formulate practical rules. In this paper we study the adsorption and electronic properties of pentacene deposited onto h-BN/Rh(111 and compare them with those of pentacene deposited onto KCl on various metal surfaces. When deposited onto KCl, the HOMO and LUMO energies of the pentacene molecules scale with the work functions of the combined KCl/metal surface. The magnitude of the variation between the respective KCl/metal systems indicates the degree of interaction of the frontier orbitals with the underlying metal. The results confirm that the so-called IDIS model developed by Willenbockel et al. applies not only to molecular layers on bare metal surfaces, but also to individual molecules on thin electronically decoupling layers. Depositing pentacene onto h-BN/Rh(111 results in significantly different adsorption characteristics, due to the topographic corrugation of the surface as well as the lateral electric fields it presents. These properties are reflected in the divergence from the aforementioned trend for the orbital energies of pentacene deposited onto h-BN/Rh(111, as well as in the different adsorption geometry. Thus, the highly desirable capacity of h-BN to trap molecules comes at the price of enhanced metal–molecule interaction, which decreases the HOMO–LUMO gap of the molecules. In spite of the enhanced interaction, the molecular orbitals are evident in scanning tunnelling spectroscopy (STS and their shapes can be resolved by spectroscopic mapping.

  10. Enhancement of hole-injection and power efficiency of organic light emitting devices using an ultra-thin ZnO buffer layer

    International Nuclear Information System (INIS)

    Huang, H.-H.; Chu, S.-Y.; Kao, P.-C.; Chen, Y.-C.; Yang, M.-R.; Tseng, Z.-L.

    2009-01-01

    The advantages of using an anode buffer layer of ZnO on the electro-optical properties of organic light emitting devices (OLEDs) are reported. ZnO powders were thermal-evaporated and then treated with ultra-violet (UV) ozone exposure to make the ZnO layers. The turn-on voltage of OLEDs decreased from 4 V (4.2 cd/m 2 ) to 3 V (3.4 cd/m 2 ) and the power efficiency increased from 2.7 lm/W to 4.7 lm/W when a 1-nm-thick ZnO layer was inserted between indium tin oxide (ITO) anodes and α-naphthylphenylbiphenyl diamine (NPB) hole-transporting layers. X-ray and ultra-violet photoelectron spectroscopy (XPS and UPS) results revealed the formation of the ZnO layer and showed that the work function increased by 0.59 eV when the ZnO/ITO layer was treated by UV-ozone for 20 min. The surface of the ZnO/ITO film became smoother than that of bare ITO film after the UV-ozone treatment. Thus, the hole-injection energy barrier was lowered by inserting an ZnO buffer layer, resulting in a decrease of the turn-on voltage and an increase of the power efficiency of OLEDs.

  11. Dynamics of Back Electron Transfer in Dye-Sensitized Solar Cells Featuring 4-tert-Butyl-Pyridine and Atomic-Layer-Deposited Alumina as Surface Modifiers.

    Science.gov (United States)

    Katz, Michael J; Vermeer, Michael J DeVries; Farha, Omar K; Pellin, Michael J; Hupp, Joseph T

    2015-06-18

    A series of dye-sensitized solar cells (DSCs) was constructed with TiO2 nanoparticles and N719 dye. The standard I3(-)/I(-) redox shuttle and the Co(1,10-phenanthroline)3(3+/2+) shuttle were employed. DSCs were modified with atomic-layered-deposited (ALD) coatings of Al2O3 and/or with the surface-adsorbing additive 4-tert-butyl-pyridine. Current-voltage data were collected to ascertain the influence of each modification upon the back electron transfer (ET) dynamics of the DSCs. The primary effect of the additives alone or in tandem is to increase the open-circuit voltage. A second is to alter the short-circuit current density, JSC. With dependence on the specifics of the system examined, any of a myriad of dynamics-related effects were observed to come into play, in both favorable (efficiency boosting) and unfavorable (efficiency damaging) ways. These effects include modulation of (a) charge-injection yields, (b) rates of interception of injected electrons by redox shuttles, and (c) rates of recombination of injected electrons with holes on surface-bound dyes. In turn, these influence charge-collection lengths, charge-collection yields, and onset potentials for undesired dark current. The microscopic origins of the effects appear to be related mainly to changes in driving force and/or electronic coupling for underlying component redox reactions. Perhaps surprisingly, only a minor role for modifier-induced shifts in conduction-band-edge energy was found. The combination of DSC-efficiency-relevant effects engendered by the modifiers was found to vary substantially as a function of the chemical identity of the redox shuttle employed. While types of modifiers are effective, a challenge going forward will be to construct systems in ways in which the benefits of organic and inorganic modifiers can be exploited in fully additive, or even synergistic, fashion.

  12. Research Update: The electronic structure of hybrid perovskite layers and their energetic alignment in devices

    Directory of Open Access Journals (Sweden)

    Selina Olthof

    2016-09-01

    Full Text Available In recent years, the interest in hybrid organic–inorganic perovskites has increased at a rapid pace due to their tremendous success in the field of thin film solar cells. This area closely ties together fundamental solid state research and device application, as it is necessary to understand the basic material properties to optimize the performances and open up new areas of application. In this regard, the energy levels and their respective alignment with adjacent charge transport layers play a crucial role. Currently, we are lacking a detailed understanding about the electronic structure and are struggling to understand what influences the alignment, how it varies, or how it can be intentionally modified. This research update aims at giving an overview over recent results regarding measurements of the electronic structure of hybrid perovskites using photoelectron spectroscopy to summarize the present status.

  13. Insertion of NiO electron blocking layer in fabrication of GaN-organic heterostructures

    Science.gov (United States)

    Li, Junmei; Guo, Wei; Jiang, Jie'an; Gao, Pingqi; Bo, Baoxue; Ye, Jichun

    2018-03-01

    We report the fabrication of a NiO thin film on top of an n-type GaN epitaxial layer. The electron-blocking capability of NiO in a hybrid organic/inorganic heterostructure consisting of n-GaN/NiO/poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) is discussed. Surface morphology, crystallography orientation, bandgap, and fermi level information of NiO films were investigated in detail. A rectifying property consistent with the proposed band diagram was observed in the current-voltage measurement. Theoretical analysis also demonstrated the effective electron blocking due to band alignment and a more balanced carrier distribution inside the GaN region with NiO inserted into the n-GaN/PEDOT:PSS heterostructure. This work provides a promising approach to the fabrication of high-efficiency hybrid optoelectronic devices.

  14. Layer-dependent electronic properties of phosphorene-like materials and phosphorene-based van der Waals heterostructures.

    Science.gov (United States)

    Huang, Y C; Chen, X; Wang, C; Peng, L; Qian, Q; Wang, S F

    2017-06-29

    Black phosphorus is a layered semiconducting allotrope of phosphorus with high carrier mobility. Its monolayer form, phosphorene, is an extremely fashionable two-dimensional material which has promising potential in transistors, optoelectronics and electronics. However, phosphorene-like analogues, especially phosphorene-based heterostructures and their layer-controlled electronic properties, are rarely systematically investigated. In this paper, the layer-dependent structural and electronic properties of phosphorene-like materials, i.e., mono- and few-layer MXs (M = Sn, Ge; X = S, Se), are first studied via first-principles calculations, and then the band edge position of these MXs as well as mono- and few-layer phosphorene are aligned. It is revealed that van der Waals heterostructures with a Moiré superstructure formed by mutual coupling among MXs and among MXs and few-layer phosphorene are able to show type-I or type-II characteristics and a I-II or II-I transition can be induced by adjusting the number of layers. Our work is expected to yield a new family of phosphorene-based semiconductor heterostructures with tunable electronic properties through altering the number of layers of the composite.

  15. Tuning Electronic Structure of Single Layer MoS2through Defect and Interface Engineering.

    Science.gov (United States)

    Chen, Yan; Huang, Shengxi; Ji, Xiang; Adepalli, Kiran; Yin, Kedi; Ling, Xi; Wang, Xinwei; Xue, Jianmin; Dresselhaus, Mildred; Kong, Jing; Yildiz, Bilge

    2018-03-27

    Transition-metal dichalcogenides (TMDs) have emerged in recent years as a special group of two-dimensional materials and have attracted tremendous attention. Among these TMD materials, molybdenum disulfide (MoS 2 ) has shown promising applications in electronics, photonics, energy, and electrochemistry. In particular, the defects in MoS 2 play an essential role in altering the electronic, magnetic, optical, and catalytic properties of MoS 2 , presenting a useful way to engineer the performance of MoS 2 . The mechanisms by which lattice defects affect the MoS 2 properties are unsettled. In this work, we reveal systematically how lattice defects and substrate interface affect MoS 2 electronic structure. We fabricated single-layer MoS 2 by chemical vapor deposition and then transferred onto Au, single-layer graphene, hexagonal boron nitride, and CeO 2 as substrates and created defects in MoS 2 by ion irradiation. We assessed how these defects and substrates affect the electronic structure of MoS 2 by performing X-ray photoelectron spectroscopy, Raman and photoluminescence spectroscopies, and scanning tunneling microscopy/spectroscopy measurements. Molecular dynamics and first-principles based simulations allowed us to conclude the predominant lattice defects upon ion irradiation and associate those with the experimentally obtained electronic structure. We found that the substrates can tune the electronic energy levels in MoS 2 due to charge transfer at the interface. Furthermore, the reduction state of CeO 2 as an oxide substrate affects the interface charge transfer with MoS 2 . The irradiated MoS 2 had a faster hydrogen evolution kinetics compared to the as-prepared MoS 2 , demonstrating the concept of defect controlled reactivity in this phase. Our findings provide effective probes for energy band and defects in MoS 2 and show the importance of defect engineering in tuning the functionalities of MoS 2 and other TMDs in electronics, optoelectronics, and

  16. Atomic layer deposition on polymer fibers and fabrics for multifunctional and electronic textiles

    Energy Technology Data Exchange (ETDEWEB)

    Brozena, Alexandra H.; Oldham, Christopher J.; Parsons, Gregory N., E-mail: gnp@ncsu.edu [Department of Chemical and Biomolecular Engineering, North Carolina State University, Raleigh, North Carolina 27695-7905 (United States)

    2016-01-15

    Textile materials, including woven cotton, polymer knit fabrics, and synthetic nonwoven fiber mats, are being explored as low-cost, flexible, and light-weight platforms for wearable electronic sensing, communication, energy generation, and storage. The natural porosity and high surface area in textiles is also useful for new applications in environmental protection, chemical decontamination, pharmaceutical and chemical manufacturing, catalytic support, tissue regeneration, and others. These applications raise opportunities for new chemistries, chemical processes, biological coupling, and nanodevice systems that can readily combine with textile manufacturing to create new “multifunctional” fabrics. Atomic layer deposition (ALD) has a unique ability to form highly uniform and conformal thin films at low processing temperature on nonuniform high aspect ratio surfaces. Recent research shows how ALD can coat, modify, and otherwise improve polymer fibers and textiles by incorporating new materials for viable electronic and other multifunctional capabilities. This article provides a current overview of the understanding of ALD coating and modification of textiles, including current capabilities and outstanding problems, with the goal of providing a starting point for further research and advances in this field. After a brief introduction to textile materials and current textile treatment methods, the authors discuss unique properties of ALD-coated textiles, followed by a review of recent electronic and multifunctional textiles that use ALD coatings either as direct functional components or as critical nucleation layers for active materials integration. The article concludes with possible future directions for ALD on textiles, including the challenges in materials, manufacturing, and manufacturing integration that must be overcome for ALD to reach its full potential in electronic and other emerging multifunctional textile systems.

  17. Effect of different photoanode nanostructures on the initial charge separation and electron injection process in dye sensitized solar cells: A photophysical study with indoline dyes

    Energy Technology Data Exchange (ETDEWEB)

    Idígoras, Jesús [Nanostructured Solar Cells Group, Department of Physical, Chemical and Natural Systems, Universidad Pablo de Olavide, Ctra. Utrera, km 1, ES-41013 Seville (Spain); Sobuś, Jan [NanoBioMedical Centre, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań (Poland); Quantum Electronics Laboratory, Faculty of Physics, Adam Mickiewicz University in Poznań, Umultowska 85, 61-614 Poznań (Poland); Jancelewicz, Mariusz [NanoBioMedical Centre, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań (Poland); Azaceta, Eneko; Tena-Zaera, Ramon [Materials Division, IK4-CIDETEC, Parque Tecnológico de San Sebastián, Paseo Miramón 196, Donostia-San Sebastián, 20009 (Spain); Anta, Juan A. [Nanostructured Solar Cells Group, Department of Physical, Chemical and Natural Systems, Universidad Pablo de Olavide, Ctra. Utrera, km 1, ES-41013 Seville (Spain); Ziółek, Marcin, E-mail: marziol@amu.edu.pl [Quantum Electronics Laboratory, Faculty of Physics, Adam Mickiewicz University in Poznań, Umultowska 85, 61-614 Poznań (Poland)

    2016-02-15

    Ultrafast and fast charge separation processes were investigated for complete cells based on several ZnO-based photoanode nanostructures and standard TiO{sub 2} nanoparticle layers sensitized with the indoline dye coded D358. Different ZnO morphologies (nanoparticles, nanowires, mesoporous), synthesis methods (hydrothermal, gas-phase, electrodeposition in aqueous media and ionic liquid media) and coatings (ZnO–ZnO core–shell, ZnO–TiO{sub 2} core–shell) were measured by transient absorption techniques in the time scale from 100 fs to 100 μs and in the visible and near-infrared spectral range. All of ZnO cells show worse electron injection yields with respect to those with standard TiO{sub 2} material. Lower refractive index of ZnO than that of TiO{sub 2} is suggested to be an additional factor, not considered so far, that can decrease the performance of ZnO-based solar cells. Evidence of the participation of the excited charge transfer state of the dye in the charge separation process is provided here. The lifetime of this state in fully working devices extends from several ps to several tens of ps, which is much longer than the typically postulated electron injection times in all-organic dye-sensitized solar cells. The results here provided, comprising a wide variety of morphologies and preparation methods, point to the universality of the poor performance of ZnO as photoanode material with respect to standard TiO{sub 2}. - Highlights: • Wide variety of morphologies and preparation methods has been checked for ZnO cells. • All ZnO cells work worse than TiO{sub 2} ones. • Effective refractive index might be an additional factor in solar cell performance. • Excited charge transfer state of indoline dyes participates in the charge separation.

  18. Molecular-structure control of ultrafast electron injection at cationic porphyrin-CdTe quantum dot interfaces

    KAUST Repository

    Aly, Shawkat Mohammede

    2015-03-05

    Charge transfer (CT) at donor (D)/acceptor (A) interfaces is central to the functioning of photovoltaic and light-emitting devices. Understanding and controlling this process on the molecular level has been proven to be crucial for optimizing the performance of many energy-challenge relevant devices. Here, we report the experimental observations of controlled on/off ultrafast electron transfer (ET) at cationic porphyrin-CdTe quantum dot (QD) interfaces using femto- and nanosecond broad-band transient absorption (TA) spectroscopy. The time-resolved data demonstrate how one can turn on/off the electron injection from porphyrin to the CdTe QDs. With careful control of the molecular structure, we are able to tune the electron injection at the porphyrin-CdTe QD interface from zero to very efficient and ultrafast. In addition, our data demonstrate that the ET process occurs within our temporal resolution of 120 fs, which is one of the fastest times recorded for organic photovoltaics. © 2015 American Chemical Society.

  19. Light-induced confinement of electrons in stacked distorted graphene layers - a (TD-)DFT study.

    Science.gov (United States)

    Olejniczak, A; Cichy, B; Radosinski, L; Strek, W

    2017-04-19

    Recently observed white-light emission from graphene ceramics cannot be explained by black body radiation theory because of a relatively low temperature of the sample. Furthermore the intensity of the emission stays at the same level even at temperatures as low as 10 K, indicating the purely electronic nature of the observed emission. In this work a model of light emission from locally interacting stacked graphene layers after intense continuous wave laser excitation is proposed. After a light-induced sp 2 to sp 3 change of the hybridization sp 2 -nanodomains surrounded by sp 3 carbon atoms could be created and the electrons can be confined. Using DFT and TD-DFT methods followed by a molecular-like approach we examine the electronic structure and the optical properties of graphene (sp 2 ,sp 3 )-clusters. We show the quantized and well separated energy levels of electrons from the domain's interior and the possibility of emission in the NIR/VIS/UV range.

  20. Fast electron flux driven by lower hybrid wave in the scrape-off layer

    International Nuclear Information System (INIS)

    Li, Y. L.; Xu, G. S.; Wang, H. Q.; Wan, B. N.; Chen, R.; Wang, L.; Gan, K. F.; Yang, J. H.; Zhang, X. J.; Liu, S. C.; Li, M. H.; Ding, S.; Yan, N.; Zhang, W.; Hu, G. H.; Liu, Y. L.; Shao, L. M.; Li, J.; Chen, L.; Zhao, N.

    2015-01-01

    The fast electron flux driven by Lower Hybrid Wave (LHW) in the scrape-off layer (SOL) in EAST is analyzed both theoretically and experimentally. The five bright belts flowing along the magnetic field lines in the SOL and hot spots at LHW guard limiters observed by charge coupled device and infrared cameras are attributed to the fast electron flux, which is directly measured by retarding field analyzers (RFA). The current carried by the fast electron flux, ranging from 400 to 6000 A/m 2 and in the direction opposite to the plasma current, is scanned along the radial direction from the limiter surface to the position about 25 mm beyond the limiter. The measured fast electron flux is attributed to the high parallel wave refractive index n || components of LHW. According to the antenna structure and the LHW power absorbed by plasma, a broad parallel electric field spectrum of incident wave from the antennas is estimated. The radial distribution of LHW-driven current density is analyzed in SOL based on Landau damping of the LHW. The analytical results support the RFA measurements, showing a certain level of consistency. In addition, the deposition profile of the LHW power density in SOL is also calculated utilizing this simple model. This study provides some fundamental insight into the heating and current drive effects induced by LHW in SOL, and should also help to interpret the observations and related numerical analyses of the behaviors of bright belts and hot spots induced by LHW

  1. Progress toward magnetic confinement of a positron-electron plasma: nearly 100% positron injection efficiency into a dipole trap

    Science.gov (United States)

    Stoneking, Matthew

    2017-10-01

    The hydrogen atom provides the simplest system and in some cases the most precise one for comparing theory and experiment in atomics physics. The field of plasma physics lacks an experimental counterpart, but there are efforts underway to produce a magnetically confined positron-electron plasma that promises to represent the simplest plasma system. The mass symmetry of positron-electron plasma makes it particularly tractable from a theoretical standpoint and many theory papers have been published predicting modified wave and stability properties in these systems. Our approach is to utilize techniques from the non-neutral plasma community to trap and accumulate electrons and positrons prior to mixing in a magnetic trap with good confinement properties. Ultimately we aim to use a levitated superconducting dipole configuration fueled by positrons from a reactor-based positron source and buffer-gas trap. To date we have conducted experiments to characterize and optimize the positron beam and test strategies for injecting positrons into the field of a supported permanent magnet by use of ExB drifts and tailored static and dynamic potentials applied to boundary electrodes and to the magnet itself. Nearly 100% injection efficiency has been achieved under certain conditions and some fraction of the injected positrons are confined for as long as 400 ms. These results are promising for the next step in the project which is to use an inductively energized high Tc superconducting coil to produce the dipole field, initially in a supported configuration, but ultimately levitated using feedback stabilization. Work performed with the support of the German Research Foundation (DFG), JSPS KAKENHI, NIFS Collaboration Research Program, and the UCSD Foundation.

  2. Preparation of electron buffer layer with crystalline ZnO nanoparticles in inverted organic photovoltaic cells

    Science.gov (United States)

    Lee, Donghwan; Kang, Taeho; Choi, Yoon-Young; Oh, Seong-Geun

    2017-06-01

    Zinc oxide (ZnO) nanoparticles synthesized through sol-gel method were used to fabricate the electron buffer layer in inverted organic photovoltaic cells (OPVs) after thermal treatment. To investigate the effect of thermal treatment on the formation of crystalline ZnO nanoparticles, the amorphous ZnO nanoparticles were treated via hydrothermal method. The crystalline phase of ZnO with well-ordered structure could be obtained when the amorphous phase of ZnO was processed under hydrothermal treatment at 170 °C. The crystalline structure of ZnO thin film in inverted organic solar cell could be obtained under relatively low annealing temperature by using thermally treated ZnO nanoparticles. The OPVs fabricated by using crystalline ZnO nanoparticles for electron buffer layer exhibited higher efficiency than the conventional ZnO nanoparticles. The best power conversion efficiency (PCE) was achieved for 7.16% through the ZnO film using the crystalline ZnO nanoparticles. The proposed method to prepared ZnO nanoparticles (NPs) could effectively reduce energy consumption during the fabrication of OPVs, which would greatly contribute to advantages such as lower manufacturing costs, higher productivity and application on flexible substrates.

  3. Engineering of electronic properties of single layer graphene by swift heavy ion irradiation

    Science.gov (United States)

    Kumar, Sunil; Kumar, Ashish; Tripathi, Ambuj; Tyagi, Chetna; Avasthi, D. K.

    2018-04-01

    In this work, swift heavy ion irradiation induced effects on the electrical properties of single layer graphene are reported. The modulation in minimum conductivity point in graphene with in-situ electrical measurement during ion irradiation was studied. It is found that the resistance of graphene layer decreases at lower fluences up to 3 × 1011 ions/cm2, which is accompanied by the five-fold increase in electron and hole mobilities. The ion irradiation induced increase in electron and hole mobilities at lower fluence up to 1 × 1011 ions/cm2 is verified by separate Hall measurements on another irradiated graphene sample at the selected fluence. In contrast to the adverse effects of irradiation on the electrical properties of materials, we have found improvement in electrical mobility after irradiation. The increment in mobility is explained by considering the defect annealing in graphene after irradiation at a lower fluence regime. The modification in carrier density after irradiation is also observed. Based on findings of the present work, we suggest ion beam irradiation as a useful tool for tuning of the electrical properties of graphene.

  4. Interfacial engineering of electron transport layer using Caesium Iodide for efficient and stable organic solar cells

    Science.gov (United States)

    Upama, Mushfika Baishakhi; Elumalai, Naveen Kumar; Mahmud, Md Arafat; Wright, Matthew; Wang, Dian; Xu, Cheng; Haque, Faiazul; Chan, Kah Howe; Uddin, Ashraf

    2017-09-01

    Polymer solar cells (PSCs) have gained immense research interest in the recent years predominantly due to low-cost, solution process-ability, and facile device fabrication. However, achieving high stability without compromising the power conversion efficiency (PCE) serves to be an important trade-off for commercialization. In line with this, we demonstrate the significance of incorporating a CsI/ZnO bilayer as electron transport layer (ETL) in the bulk heterojunction PSCs employing low band gap polymer (PTB7) and fullerene (PC71BM) as the photo-active layer. The devices with CsI/ZnO interlayer exhibited substantial enhancement of 800% and 12% in PCE when compared to the devices with pristine CsI and pristine ZnO as ETL, respectively. Furthermore, the UV and UV-ozone induced degradation studies revealed that the devices incorporating CsI/ZnO bilayer possess excellent decomposition stability (∼23% higher) over the devices with pristine ZnO counterparts. The incorporation of CsI between ITO and ZnO was found to favorably modify the energy-level alignment at the interface, contributing to the charge collection efficiency as well as protecting the adjacent light absorbing polymer layers from degradation. The mechanism behind the improvement in PCE and stability is analyzed using the electrochemical impedance spectroscopy and dark I-V characteristics.

  5. Van Allen Probes observation of a 360° phase shift in the flux modulation of injected electrons by ULF waves

    Science.gov (United States)

    Chen, X.-R.; Zong, Q.-G.; Zhou, X.-Z.; Blake, J. Bernard; Wygant, J. R.; Kletzing, C. A.

    2017-02-01

    We present Van Allen Probe observation of drift-resonance interaction between energetic electrons and ultralow frequency (ULF) waves on 29 October 2013. Oscillations in electron flux were observed at the period of ˜450 s, which is also the dominant period of the observed ULF magnetic pulsations. The phase shift of the electron fluxes (˜50 to 150 keV) across the estimated resonant energy (˜104 keV) is ˜360°. This phase relationship is different from the characteristic 180° phase shift as expected from the drift-resonance theory. We speculate that the additional 180° phase difference arises from the inversion of electron phase space density (PSD) gradient, which in turn is caused by the drift motion of the substorm injected electrons. This PSD gradient adjusts the characteristic particle signatures in the drift-resonance theory, which indicates a coupling effect between the magnetotail and the radiation belt and helps to better understand the wave-particle interaction in the magnetosphere.

  6. Prompt injections of highly relativistic electrons induced by interplanetary shocks: A statistical study of Van Allen Probes observations

    Science.gov (United States)

    Schiller, Q.; Kanekal, S. G.; Jian, L. K.; Li, X.; Jones, A.; Baker, D. N.; Jaynes, A.; Spence, H. E.

    2016-12-01

    We conduct a statistical study on the sudden response of outer radiation belt electrons due to interplanetary (IP) shocks during the Van Allen Probes era, i.e., 2012 to 2015. Data from the Relativistic Electron-Proton Telescope instrument on board Van Allen Probes are used to investigate the highly relativistic electron response (E > 1.8 MeV) within the first few minutes after shock impact. We investigate the relationship of IP shock parameters, such as Mach number, with the highly relativistic electron response, including spectral properties and radial location of the shock-induced injection. We find that the driving solar wind structure of the shock does not affect occurrence for enhancement events, 25% of IP shocks are associated with prompt energization, and 14% are associated with MeV electron depletion. Parameters that represent IP shock strength are found to correlate best with highest levels of energization, suggesting that shock strength may play a key role in the severity of the enhancements. However, not every shock results in an enhancement, indicating that magnetospheric preconditioning may be required.

  7. Enhanced long-distance transport of periodic electron beams in an advanced double layer cone-channel target

    Directory of Open Access Journals (Sweden)

    Yanling Ji

    2018-02-01

    Full Text Available An enhanced long-distance transport of periodic electron beams in an advanced double layer cone-channel target is investigated using two-dimensional particle-in-cell simulations. The target consists of a cone attached to a double-layer hollow channel with a near-critical-density inner layer. The periodic electron beams are generated by the combination of ponderomotive force and longitudinal laser electric field. Then a stable electron propagation is achieved in the double-layer channel over a much longer distance without evident divergency, compared with a normal cone-channel target. Detailed simulations show that the much better long-distance collimation and guidance of energetic electrons is attributed to the much stronger electromagnetic fields at the inner wall surfaces. Furthermore, a continuous electron acceleration is obtained by the more intense laser electric fields and extended electron acceleration length in the channel. Our investigation shows that by employing this advanced target, both the forward-going electron energy flux in the channel and the energy coupling efficiency from laser to electrons are about threefold increased in comparison with the normal case.

  8. Enhanced long-distance transport of periodic electron beams in an advanced double layer cone-channel target

    Science.gov (United States)

    Ji, Yanling; Duan, Tao; Zhou, Weimin; Li, Boyuan; Wu, Fengjuan; Zhang, Zhimeng; Ye, Bin; Wang, Rong; Wu, Chunrong; Tang, Yongjian

    2018-02-01

    An enhanced long-distance transport of periodic electron beams in an advanced double layer cone-channel target is investigated using two-dimensional particle-in-cell simulations. The target consists of a cone attached to a double-layer hollow channel with a near-critical-density inner layer. The periodic electron beams are generated by the combination of ponderomotive force and longitudinal laser electric field. Then a stable electron propagation is achieved in the double-layer channel over a much longer distance without evident divergency, compared with a normal cone-channel target. Detailed simulations show that the much better long-distance collimation and guidance of energetic electrons is attributed to the much stronger electromagnetic fields at the inner wall surfaces. Furthermore, a continuous electron acceleration is obtained by the more intense laser electric fields and extended electron acceleration length in the channel. Our investigation shows that by employing this advanced target, both the forward-going electron energy flux in the channel and the energy coupling efficiency from laser to electrons are about threefold increased in comparison with the normal case.

  9. Electron Injection from Copper Diimine Sensitizers into TiO2

    DEFF Research Database (Denmark)

    Mara, Michael W.; Bowman, David N.; Buyukcakir, Onur

    2015-01-01

    Copper(I) diimine complexes have emerged as low cost replacements for ruthenium complexes as light sensitizers and electron donors, but their shorter metal-to-ligand-charge-transfer (MLCT) states lifetimes and lability of transient Cu(II) species impede their intended functions. Two carboxylated Cu...... on the efficiency of the interfacial electron-transfer process. The mechanisms for electron transfer in these systems are discussed and used to develop new strategies in optimizing copper(I) diimine complexes in solar energy conversion devices....

  10. Electron Cloud in the Collimator- and Injection- Region of the Spallation Neutron Source's Accumulator Ring

    CERN Document Server

    Wang, Lanfa; Henderson, Stuart; Hseuh Hsiao Chaun; Lee, Yong Y; Raparia, Deepak; Wei, Jie

    2005-01-01

    The beam loss along the Spallation Neutron Source's (SNS's) accumulator ring is mainly located at the collimator region. From the ORBIT simulation, the peak power deposition at the three collimators is about 500, 350 and 240 W/m, respectively. Therefore, a sizeable number of electrons may be accumulated at this region due to the great beam loss. This paper simulated the electron cloud at the collimator region and the possible remedy.

  11. The intriguing electronic and optical properties modulation of hydrogen and fluorine codecorated silicene layers

    International Nuclear Information System (INIS)

    Yang, Qun; Tan, Chunjian; Meng, Ruishen; Jiang, Junke; Liang, Qiuhua; Sun, Xiang; Yang, Daoguo; Chen, Xianping

    2017-01-01

    Highlights: • The HSiF bilayer is very stable due to the high binding energy even larger than the ones of bilayer graphene. • The HSiF bilayer exhibits a moderate direct band gap of 0.296 eV much lower than that of HSiF monolayer. • All the HSiF layers have a direct band gap nature, irrespective of stacking pattern, thickness and external electric fields, which is an advantage over MoS 2 layers. Besides, it is advantageous to the application of HSiF layers in the field of optical devices. • The external electric field can effectively tune the band gaps of HSiF layers. Especially, even a semiconductor–metal transition occurs. • After the formation of HSiF bilayer, the complete electron-hole separation enhances the photocatalytic efficiency of HSiF bilayer and it exhibits a significantly improved visible light adsorption peak. - Abstract: First-principles calculations based on density-functional theory reveal some superior physical properties of hydrogen and fluorine co-decorated silicene (HSiF) monolayer and bilayer. Our simulated results reveal that the HSiF monolayer is a large direct band gap semiconductor greatly differing from the gapless semi-metallic silicene. There exists strong interlayer coupling in HSiF bilayer, leading to the good stabilities of HSiF bilayer even beyond bilayer graphene. The proposed HSiF bilayer exhibits a moderate direct band gap of 0.296 eV which is much lower than that of HSiF monolayer. Encouragingly, HSiF layers all have a direct band gap nature, irrespective of stacking pattern, thickness and external electric fields, which is an advantage over MoS 2 layers. Furthermore, an out-of-plane electric field has an evident impact on the band structures of the HSiF monolayer and bilayer. Especially, the band gap of HSiF bilayer can be effectively tuned by external electric field, even a semiconductor–metal transition occurs. More importantly, the HSiF bilayer exhibits a significant improved visible light adsorption peak with

  12. The intriguing electronic and optical properties modulation of hydrogen and fluorine codecorated silicene layers

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Qun; Tan, Chunjian [Faculty of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, 541004 Guilin (China); Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, Chongqing University and College of Opto-Electronic Engineering, Chongqing University, 400044 Chongqing (China); Meng, Ruishen; Jiang, Junke; Liang, Qiuhua; Sun, Xiang [Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, Chongqing University and College of Opto-Electronic Engineering, Chongqing University, 400044 Chongqing (China); Yang, Daoguo [Faculty of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, 541004 Guilin (China); Chen, Xianping, E-mail: xianpingchen@cqu.edu.cn [Faculty of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, 541004 Guilin (China); Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, Chongqing University and College of Opto-Electronic Engineering, Chongqing University, 400044 Chongqing (China)

    2017-03-15

    Highlights: • The HSiF bilayer is very stable due to the high binding energy even larger than the ones of bilayer graphene. • The HSiF bilayer exhibits a moderate direct band gap of 0.296 eV much lower than that of HSiF monolayer. • All the HSiF layers have a direct band gap nature, irrespective of stacking pattern, thickness and external electric fields, which is an advantage over MoS{sub 2} layers. Besides, it is advantageous to the application of HSiF layers in the field of optical devices. • The external electric field can effectively tune the band gaps of HSiF layers. Especially, even a semiconductor–metal transition occurs. • After the formation of HSiF bilayer, the complete electron-hole separation enhances the photocatalytic efficiency of HSiF bilayer and it exhibits a significantly improved visible light adsorption peak. - Abstract: First-principles calculations based on density-functional theory reveal some superior physical properties of hydrogen and fluorine co-decorated silicene (HSiF) monolayer and bilayer. Our simulated results reveal that the HSiF monolayer is a large direct band gap semiconductor greatly differing from the gapless semi-metallic silicene. There exists strong interlayer coupling in HSiF bilayer, leading to the good stabilities of HSiF bilayer even beyond bilayer graphene. The proposed HSiF bilayer exhibits a moderate direct band gap of 0.296 eV which is much lower than that of HSiF monolayer. Encouragingly, HSiF layers all have a direct band gap nature, irrespective of stacking pattern, thickness and external electric fields, which is an advantage over MoS{sub 2} layers. Furthermore, an out-of-plane electric field has an evident impact on the band structures of the HSiF monolayer and bilayer. Especially, the band gap of HSiF bilayer can be effectively tuned by external electric field, even a semiconductor–metal transition occurs. More importantly, the HSiF bilayer exhibits a significant improved visible light adsorption

  13. Investigation of tribocharges and their migration in layered model toners by electron holography

    Science.gov (United States)

    Seok Jeong, Jong; Murakami, Yasukazu; Shindo, Daisuke; Kawase, Hiromitsu

    2011-06-01

    The distribution of tribocharges in toner samples is studied by electron holography, a powerful tool for direct observations of the electric field. We carry out both in situ and ex situ observations on triboelectricity using model toner specimens, which are laminated with thin films, and a transmission electron microscopy specimen holder with two piezo-driving microprobes. We investigate specimens with stacking layer-patterns of "minus and weak minus" and "plus and minus." The observed equipotential lines show a simple semi-ellipsoidal shape, regardless of the combination of toner films having different charging characteristics. Computer simulations for quantitative analyses of the electron hologram results with a modulated reference wave by a long-range electric field from the tribocharges are performed. Both the experimental results and the simulations indicate that the tribocharges are not localized at the positions where they are formed; rather they migrate to achieve a gradient charge density in the specimen. The charge quantity of the model toner is also evaluated by the simulation.

  14. Two-Dimensional SiS Layers with Promising Electronic and Optoelectronic Properties: Theoretical Prediction.

    Science.gov (United States)

    Yang, Ji-Hui; Zhang, Yueyu; Yin, Wan-Jian; Gong, X G; Yakobson, Boris I; Wei, Su-Huai

    2016-02-10

    Two-dimensional (2D) semiconductors can be very useful for novel electronic and optoelectronic applications because of their good material properties. However, all current 2D materials have shortcomings that limit their performance. As a result, new 2D materials are highly desirable. Using atomic transmutation and differential evolution global optimization methods, we identified two group IV-VI 2D materials, Pma2-SiS and silicene sulfide. Pma2-SiS is found to be both chemically, energetically, and thermally stable. Most importantly, Pma2-SiS has shown good electronic and optoelectronic properties, including direct bandgaps suitable for solar cells, good mobility for nanoelectronics, good flexibility of property tuning by layer control and applied strain, and good air stability as well. Therefore, Pma2-SiS is expected to be a promising 2D material in the field of 2D electronics and optoelectronics. The designing principles demonstrated in identifying these two tantalizing examples have great potential to accelerate the finding of new functional 2D materials.

  15. Multi-layer Thick Gas Electron Multiplier (M-THGEM) Simulations at Low Pressure for High-Gain Operation

    Science.gov (United States)

    Fritsch, Adam; Cortesi, Marco; Mittig, Wolfgang

    2017-09-01

    The Multi-layer Thick Gaseous Electron Multiplier (M-THGEM) is a novel hole-type gaseous electron multiplier produced by multi-layer printed circuit board technology; it consists of a densely perforated assembly of multiple insulating substrate sheets sandwiched between thin metallic-electrode layers. The electron avalanche processes occur along the successive multiplication stages within the M-THGEM holes, under the action of strong dipole fields resulting from the application of suitable potential differences between the electrodes. Using ANSYS Maxwell and Garfield, Monte Carlo simulations have been performed to find geometries that maximize the achievable gain, electron collection efficiency, ion feedback, energy resolution of M-THGEM devices at low pressure with pure gases. Comparisons of the calculations with measurements of a prototype device are ongoing. Preliminary results will be presented.

  16. Reduction of electron density in a plasma by injection of liquids

    Science.gov (United States)

    Sodha, M. S.; Evans, J. S.

    1974-01-01

    In this paper, the authors have investigated the physics of various processes relevant to the reduction of electron density in a plasma by addition of water droplets; two processes have in particular been analyzed in some detail, viz, the electron attachment to charged dielectric droplets and the emission of negative ions by vaporization from these droplets. The results of these analyses have been applied to a study of the kinetics of reduction of electron density and charging of droplets in an initially overionized plasma, after addition of water droplets. A number of simplifying assumptions including uniform size and charge on droplets and negligible change in the radius of the droplet due to evaporation have been made.

  17. Low jitter metal vapor vacuum arc ion source for electron beam ion trap injections

    International Nuclear Information System (INIS)

    Holland, Glenn E.; Boyer, Craig N.; Seely, John F.; Tan, J.N.; Pomeroy, J.M.; Gillaspy, J.D.

    2005-01-01

    We describe a metal vapor vacuum arc (MeVVA) ion source containing eight different cathodes that are individually selectable via the control electronics which does not require moving components in vacuum. Inside the vacuum assembly, the arc plasma is produced by means of a 30 μs pulse (26 kV,125 A) delivering 2.4 mC of charge to the cathode sample material. The trigger jitter is minimized ( 9 ions/cm 2 , measured by an unbiased Faraday cup positioned 20 cm from the extractor grid, at discharge rates up to 5 Hz. The electronic triggering of the discharge is via a fiber optic interface. We present the design, fabrication details, and performance of this MeVVA, recently installed on the National Institute of Standards and Technology electron beam ion trap (EBIT)

  18. Three-dimensional structure of the surface layer protein of Aquaspirilium serpens VHA determined by electron crystallography

    Energy Technology Data Exchange (ETDEWEB)

    Dickson, M.R.; Downing, K.H.; Wu, W.H.; Glaeser, R.M.

    1986-09-01

    The three-dimensional structure of the protein which forms the S layer of Aquaspirilium serpens strain VHA has been determined by electron microscopy. Structures have been reconstructed to a resolution of about 1.6 nm for single-layered specimens and about 4 nm for two-layered specimens. The structure, which has hexagonal symmetry, consists of a core in the shape of a cup, with six projections arising from the rim of the cup to join adjacent subunits at the threefold symmetry axes. The model is consistent with edge views of the S layer which have been obtained in this and other work. It is now clear from this work and from three-dimensional reconstructions of other bacterial S layers that a wide diversity exists in the morphology of surface layers.

  19. Three-dimensional structure of the surface layer protein of Aquaspirillum serpens VHA determined by electron crystallography.

    Science.gov (United States)

    Dickson, M R; Downing, K H; Wu, W H; Glaeser, R M

    1986-09-01

    The three-dimensional structure of the protein which forms the S layer of Aquaspirillum serpens strain VHA has been determined by electron microscopy. Structures have been reconstructed to a resolution of about 1.6 nm for single-layered specimens and about 4 nm for two-layered specimens. The structure, which has hexagonal symmetry, consists of a core in the shape of a cup, with six projections arising from the rim of the cup to join adjacent subunits at the threefold symmetry axes. The model is consistent with edge views of the S layer which have been obtained in this and other work. It is now clear from this work and from three-dimensional reconstructions of other bacterial S layers that a wide diversity exists in the morphology of surface layers.

  20. High-efficiency green phosphorescent organic light-emitting diodes with double-emission layer and thick N-doped electron transport layer

    Energy Technology Data Exchange (ETDEWEB)

    Nobuki, Shunichiro, E-mail: shunichiro.nobuki.nb@hitachi.com [Hitachi Research Laboratory, Hitachi Ltd., 7-1-1 Omika-cho, Hitachi-city, Ibaraki 319-1292 (Japan); Wakana, Hironori; Ishihara, Shingo [Hitachi Research Laboratory, Hitachi Ltd., 7-1-1 Omika-cho, Hitachi-city, Ibaraki 319-1292 (Japan); Mikami, Akiyoshi [Dept. of Electrical Engineering, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichimachi, Ishikawa 921-8501 (Japan)

    2014-03-03

    We have developed green phosphorescent organic light-emitting diodes (OLEDs) with high external quantum efficiency of 59.7% and power efficiency of 243 lm/W at 2.73 V at 0.053 mA/cm{sup 2}. A double emission layer and a thick n-doped electron transport layer were adopted to improve the exciton recombination factor. A high refractive index hemispherical lens was attached to a high refractive index substrate for extracting light trapped inside the substrate and the multiple-layers of OLEDs to air. Additionally, we analyzed an energy loss mechanism to clarify room for the improvement of our OLEDs including the charge balance factor. - Highlights: • We developed high efficiency green phosphorescent organic light-emitting diode (OLED). • Our OLED had external quantum efficiency of 59.7% and power efficiency of 243 lm/W. • A double emission layer and thick n-doped electron transport layer were adopted. • High refractive index media (hemispherical lens and substrate) were also used. • We analyzed an energy loss mechanism to clarify the charge balance factor of our OLED.

  1. Ammonia reduced graphene oxides as a hole injection layer for CdSe/CdS/ZnS quantum dot light-emitting diodes

    Science.gov (United States)

    Lou, Qing; Ji, Wen-Yu; Zhao, Jia-Long; Shan, Chong-Xin

    2016-08-01

    In this study, we report quantum-dot light-emitting devices (QD-LEDs) using ammonia reduced graphene oxide (rGO) as a hole injection layer (HIL). Compared with pristine GO, QD-LEDs employing rGO as a HIL show higher maximum luminance (936 cd m-2 versus 699 cd m-2) and lower turn-on voltage (V th, 5.0 V versus 7.5 V). The improved performance can be attributed to the synergistic effect of the improved conductivity (1.27 μS cm-1 versus 0.139 μS cm-1) and decreased work function (5.27 eV versus 5.40 eV) of the GO after the reduction process. The above results indicate that ammonia functionalized graphene may be a promising hole injection material for QD-LEDs.

  2. Selected methods of electron-and ion-diagnostics in tokamak scrape-off-layer

    Directory of Open Access Journals (Sweden)

    Sadowski Marek J.

    2015-06-01

    Full Text Available This invited paper considers reasons why exact measurements of fast electron and ion losses in tokamaks, and particularly i n a scrape-off-layer and near a divertor region, are necessary in order to master nuclear fusion energy production. Attention is also paid to direct measurements of escaping fusion products from D-D and D-T reactions, and in particular of fast alphas which might be used for plasma heating. The second part describes the generation of so-called runaway and ripple-born electrons which might induce high energy losses and cause severe damages of internal walls in fusion facilities. Advantages and disadvantages of different diagnostic methods applied for studies of such fast electrons are discussed. Particular attention is paid to development of a direct measuring technique based on the Cherenkov effect which might be induced by fast electrons in appropriate radiators. There are presented various versions of Cherenkov-type probes which have been developed by the NCBJ team and applied in different tokamak experiments. The third part is devoted to direct measurements of fast ions (including those produced by the nuclear fusion reactions which can escape from a high-temperature plasma region. Investigation of fast fusion-produced protons from tokamak discharges is reported. New ion probes, which were developed by the NCBJ team, are also presented. For the first time there is given a detailed description of an ion pinhole camera, which enables irradiation of several nuclear track detectors during a single tokamak discharge, and a miniature Thomson-type mass-spectrometer, which can be used for ion measurements at plasma borders.

  3. Calculation of electron spectra and some problems in the thermodynamics of graphene layers

    Energy Technology Data Exchange (ETDEWEB)

    Alisultanov, Z. Z., E-mail: zaur0102@gmail.com [Russian Academy of Sciences, Prokhorov General Physics Institute (Russian Federation)

    2016-02-15

    The expressions for the energy spectra of monolayer, bilayer, and multilayer graphene, as well as epitaxial graphene, are derived using the quantum Green’s functions method. Analytic expressions are obtained for the densities of states of these systems. It is shown that a bandgap can appear the spectrum of an epitaxial graphene bilayer. A number of problems in the thermodynamics of electrons in free and epitaxial graphene layers are considered as applications. Analytic expressions are obtained for the chemical potential and heat capacity in the limiting cases of low and high temperatures. Quantum oscillations of heat capacity in graphene are analyzed taking into account the Coulomb interaction. The Berry phase of epitaxial graphene is investigated.

  4. Ab initio electronic band structure study of III-VI layered semiconductors

    Science.gov (United States)

    Olguín, Daniel; Rubio-Ponce, Alberto; Cantarero, Andrés

    2013-08-01

    We present a total energy study of the electronic properties of the rhombohedral γ-InSe, hexagonal ɛ-GaSe, and monoclinic GaTe layered compounds. The calculations have been done using the full potential linear augmented plane wave method, including spin-orbit interaction. The calculated valence bands of the three compounds compare well with angle resolved photoemission measurements and a discussion of the small discrepancies found has been given. The present calculations are also compared with recent and previous band structure calculations available in the literature for the three compounds. Finally, in order to improve the calculated band gap value we have used the recently proposed modified Becke-Johnson correction for the exchange-correlation potential.

  5. Inductive crystal field control in layered metal oxides with correlated electrons

    Energy Technology Data Exchange (ETDEWEB)

    Balachandran, P. V.; Cammarata, A.; Rondinelli, J. M., E-mail: jrondinelli@nortwestern.edu [Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104 (United States); Nelson-Cheeseman, B. B. [School of Engineering, University of St. Thomas, St. Paul, Minnesota 55105 (United States); Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Bhattacharya, A. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

    2014-07-01

    We show that the NiO{sub 6} crystal field energies can be tailored indirectly via heterovalent A cation ordering in layered (La,A)NiO{sub 4} Ruddlesden–Popper (RP) oxides, where A = Sr, Ca, or Ba, using density functional calculations. We leverage as a driving force the electrostatic interactions between charged [LaO]{sup 1+} and neutral [AO]{sup 0} planes to inductively tune the Ni–O bond distortions, without intentional doping or epitaxial strain, altering the correlated d-orbital energies. We use this strategy to design cation ordered LaCaNiO{sub 4} and LaBaNiO{sub 4} with distortions favoring enhanced Ni e{sub g} orbital polarization, and find local electronic structure signatures analogous to those in RP La-cuprates, i.e., parent phases of the high-temperature superconducting oxides.

  6. Electron Beam Evaporated TiO2 Layer for High Efficiency Planar Perovskite Solar Cells on Flexible Polyethylene Terephthalate Substrates

    KAUST Repository

    Qiu, Weiming

    2015-09-30

    The TiO2 layer made by electron beam (e-beam) induced evaporation is demonstrated as electron transport layer (ETL) in high efficiency planar junction perovskite solar cells. The temperature of the substrate and the thickness of the TiO2 layer can be easily controlled with this e-beam induced evaporation method, which enables the usage of different types of substrates. Here, Perovskite solar cells based on CH3NH3PbI3-xClx achieve power conversion efficiencies of 14.6% on glass and 13.5% on flexible plastic substrates. The relationship between the TiO2 layer thickness and the perovskite morphology is studied with scanning electron microscope (SEM), atomic force microscope (AFM), and X-ray photoelectron spectroscopy (XPS). Our results indicate that pinholes in thin TiO2 layer lead to pinholes in the perovskite layer. By optimizing the TiO2 thickness, perovskite layers with substantially increased surface coverage and reduced pinhole areas are fabricated, increasing overall device performance.

  7. Impact of the Anchoring Ligand on Electron Injection and Recombination Dynamics at the Interface of Novel Asymmetric Push-Pull Zinc Phthalocyanines and TiO2

    NARCIS (Netherlands)

    Sharma, Divya; Steen, Gerrit Willem; Korterik, Jeroen P.; Garcia-Iglesias, M.; Vazquez, P; Torres, T.; Herek, Jennifer Lynn; Huijser, Jannetje Maria

    2013-01-01

    Phthalocyanines are promising photosensitizers for dye-sensitized solar cells (DSSCs). A parameter that has been problematic for a long time involves electron injection (EI) into the TiO2. The development of push-pull phthalocyanines shows great potential to improve the ratio of EI to back electron

  8. Electronic transport and dielectric properties of low-dimensional structures of layered transition metal dichalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Ashok, E-mail: ashok.1777@yahoo.com; Ahluwalia, P.K., E-mail: pk_ahluwalia7@yahoo.com

    2014-02-25

    Graphical abstract: We present electronic transport and dielectric response of layered transition metal dichalcogenides nanowires and nanoribbons. Illustration 1: Conductance (G) and corresponding local density of states(LDOS) for LTMDs wires at applied bias. I–V characterstics are shown in lowermost panels. Highlights: • The studied configurations show metallic/semiconducting nature. • States around the Fermi energy are mainly contributed by the d orbitals of metal atoms. • The studied configurations show non-linear current–voltage (I–V) characteristics. • Additional plasmonic features at low energy have been observed for both wires and ribbons. • Dielectric functions for both wires and ribbons are anisotropic (isotropic) at low (high) energy range. -- Abstract: We present first principle study of the electronic transport and dielectric properties of nanowires and nanoribbons of layered transition metal dichalcogenides (LTMDs), MX{sub 2} (M = Mo, W; X = S, Se, Te). The studied configuration shows metallic/semiconducting nature and the states around the Fermi energy are mainly contributed by the d orbitals of metal atoms. Zero-bias transmission show 1G{sub 0} conductance for the ribbons of MoS{sub 2} and WS{sub 2}; 2G{sub 0} conductance for MoS{sub 2}, WS{sub 2}, WSe{sub 2} wires, and ribbons of MoTe{sub 2} and WTe{sub 2}; and 3G{sub 0} conductance for WSe{sub 2} ribbon. The studied configurations show non-linear current–voltage (I–V) characteristics. Negative differential conductance (NDC) has also been observed for the nanoribbons of the selenides and tellurides of both Mo and W. Furthermore, additional plasmonic features below 5 eV energy have been observed for both wires and ribbons as compared to the corresponding monolayers, which is found to be red-shifted on going from nanowires to nanoribbons.

  9. Ultrafast electron injection at the cationic porphyrin-graphene interface assisted by molecular flattening

    KAUST Repository

    Aly, Shawkat Mohammede

    2014-01-01

    The steady-state and femtosecond (fs) time-resolved data clearly demonstrate that the charge transfer (CT) process at the porphyrin-graphene carboxylate (GC) interfaces can be tuned from zero to very sufficient and ultrafast by changing the electronic structure of the meso unit and the redox properties of the porphyrin cavity. This journal is © the Partner Organisations 2014.

  10. Effect of electron injection on defect reactions in irradiated silicon containing boron, carbon, and oxygen

    Science.gov (United States)

    Makarenko, L. F.; Lastovskii, S. B.; Yakushevich, H. S.; Moll, M.; Pintilie, I.

    2018-04-01

    Comparative studies employing Deep Level Transient Spectroscopy and C-V measurements have been performed on recombination-enhanced reactions between defects of interstitial type in boron doped silicon diodes irradiated with alpha-particles. It has been shown that self-interstitial related defects which are immobile even at room temperatures can be activated by very low forward currents at liquid nitrogen temperatures. Their activation is accompanied by the appearance of interstitial carbon atoms. It has been found that at rather high forward current densities which enhance BiOi complex disappearance, a retardation of Ci annealing takes place. Contrary to conventional thermal annealing of the interstitial boron-interstitial oxygen complex, the use of forward current injection helps to recover an essential part of charge carriers removed due to irradiation.

  11. The Effects of Solar Wind Dynamic Pressure Changes on the Substorm Auroras and Energetic Electron Injections on 24 August 2005

    Science.gov (United States)

    Li, L. Y.; Wang, Z. Q.

    2018-01-01

    After the passage of an interplanetary (IP) shock at 06:13 UT on 24 August 2005, the enhancement (>6 nPa) of solar wind dynamic pressure and the southward turning of interplanetary magnetic field (IMF) cause the earthward movement of dayside magnetopause and the drift loss of energetic particles near geosynchronous orbit. The persistent electron drift loss makes the geosynchronous satellites cannot observe the substorm electron injection phenomenon during the two substorm expansion phases (06:57-07:39 UT) on that day. Behind the IP shock, the fluctuations ( 0.5-3 nPa) of solar wind dynamic pressure not only alter the dayside auroral brightness but also cause the entire auroral oval to swing in the day-night direction. However, there is no Pi2 pulsation in the nightside auroral oval during the substorm growth phase from 06:13 to 06:57 UT. During the subsequent two substorm expansion phases, the substorm expansion activities cause the nightside aurora oval brightening from substorm onset site to higher latitudes, and meanwhile, the enhancement (decline) of solar wind dynamic pressure makes the nightside auroral oval move toward the magnetic equator (the magnetic pole). These observations demonstrate that solar wind dynamic pressure changes and substorm expansion activities can jointly control the luminosity and location of the nightside auroral oval when the internal and external disturbances occur simultaneously. During the impact of a strong IP shock, the earthward movement of dayside magnetopause probably causes the disappearance of the substorm electron injections near geosynchronous orbit.

  12. Atomic layer deposition in nanostructured photovoltaics: tuning optical, electronic and surface properties

    Science.gov (United States)

    Palmstrom, Axel F.; Santra, Pralay K.; Bent, Stacey F.

    2015-07-01

    Nanostructured materials offer key advantages for third-generation photovoltaics, such as the ability to achieve high optical absorption together with enhanced charge carrier collection using low cost components. However, the extensive interfacial areas in nanostructured photovoltaic devices can cause high recombination rates and a high density of surface electronic states. In this feature article, we provide a brief review of some nanostructured photovoltaic technologies including dye-sensitized, quantum dot sensitized and colloidal quantum dot solar cells. We then introduce the technique of atomic layer deposition (ALD), which is a vapor phase deposition method using a sequence of self-limiting surface reaction steps to grow thin, uniform and conformal films. We discuss how ALD has established itself as a promising tool for addressing different aspects of nanostructured photovoltaics. Examples include the use of ALD to synthesize absorber materials for both quantum dot and plasmonic solar cells, to grow barrier layers for dye and quantum dot sensitized solar cells, and to infiltrate coatings into colloidal quantum dot solar cell to improve charge carrier mobilities as well as stability. We also provide an example of monolayer surface modification in which adsorbed ligand molecules on quantum dots are used to tune the band structure of colloidal quantum dot solar cells for improved charge collection. Finally, we comment on the present challenges and future outlook of the use of ALD for nanostructured photovoltaics.

  13. Perovskite Solar Cells Based on Low-Temperature Processed Indium Oxide Electron Selective Layers.

    Science.gov (United States)

    Qin, Minchao; Ma, Junjie; Ke, Weijun; Qin, Pingli; Lei, Hongwei; Tao, Hong; Zheng, Xiaolu; Xiong, Liangbin; Liu, Qin; Chen, Zhiliang; Lu, Junzheng; Yang, Guang; Fang, Guojia

    2016-04-06

    Indium oxide (In2O3) as a promising n-type semiconductor material has been widely employed in optoelectronic applications. In this work, we applied low-temperature solution-processed In2O3 nanocrystalline film as an electron selective layer (ESL) in perovskite solar cells (PSCs) for the first time. By taking advantages of good optical and electrical properties of In2O3 such as high mobility, wide band gap, and high transmittance, we obtained In2O3-based PSCs with a good efficiency exceeding 13% after optimizing the concentration of the precursor solution and the annealing temperature. Furthermore, to enhance the performance of the In2O3-based PSCs, a phenyl-C61-butyric acid methyl ester (PCBM) layer was introduced to modify the surface of the In2O3 film. The PCBM film could fill up the pinholes or cracks along In2O3 grain boundaries to passivate the defects and make the ESL extremely compact and uniform, which is conducive to suppressing the charge recombination. As a result, the efficiency of the In2O3-based PSC was improved to 14.83% accompanied with V(OC), J(SC), and FF being 1.08 V, 20.06 mA cm(-2), and 0.685, respectively.

  14. Atomic layer deposition in nanostructured photovoltaics: tuning optical, electronic and surface properties.

    Science.gov (United States)

    Palmstrom, Axel F; Santra, Pralay K; Bent, Stacey F

    2015-08-07

    Nanostructured materials offer key advantages for third-generation photovoltaics, such as the ability to achieve high optical absorption together with enhanced charge carrier collection using low cost components. However, the extensive interfacial areas in nanostructured photovoltaic devices can cause high recombination rates and a high density of surface electronic states. In this feature article, we provide a brief review of some nanostructured photovoltaic technologies including dye-sensitized, quantum dot sensitized and colloidal quantum dot solar cells. We then introduce the technique of atomic layer deposition (ALD), which is a vapor phase deposition method using a sequence of self-limiting surface reaction steps to grow thin, uniform and conformal films. We discuss how ALD has established itself as a promising tool for addressing different aspects of nanostructured photovoltaics. Examples include the use of ALD to synthesize absorber materials for both quantum dot and plasmonic solar cells, to grow barrier layers for dye and quantum dot sensitized solar cells, and to infiltrate coatings into colloidal quantum dot solar cell to improve charge carrier mobilities as well as stability. We also provide an example of monolayer surface modification in which adsorbed ligand molecules on quantum dots are used to tune the band structure of colloidal quantum dot solar cells for improved charge collection. Finally, we comment on the present challenges and future outlook of the use of ALD for nanostructured photovoltaics.

  15. Improved efficiency of NiOx-based p-i-n perovskite solar cells by using PTEG-1 as electron transport layer

    NARCIS (Netherlands)

    Groeneveld, Bart G. H. M.; Najafi, Mehrdad; Steensma, Bauke; Adjokatse, Sampson; Fang, Hong-Hua; Jahani, Fatemeh; Qiu, Li; ten Brink, Gert H.; Hummelen, Jan C.; Loi, Maria Antonietta

    We present efficient p-i-n type perovskite solar cells using NiOx as the hole transport layer and a fulleropyrrolidine with a triethylene glycol monoethyl ether side chain (PTEG-1) as electron transport layer. This electron transport layer leads to higher power conversion efficiencies compared to

  16. Comparison of Electronic Structure and Magnetic Properties of Few Layer Graphene and Multiwall Carbon Nanotubes

    Directory of Open Access Journals (Sweden)

    Sekhar Chandra Ray

    2016-01-01

    Full Text Available A comparative study has been made for the non-catalyst based few layer graphene (FLG and Fe-catalyst based multiwall carbon nanotubes (MWCNTs. Magnetic and electronic properties of FLG and MWCNTs were studied using magnetic M-H hysteresis loops and synchrotron radiation based X-ray absorption fine structure spectroscopy measurements. Structural defects and electronic and bonding properties of FLG/MWCNTs have been studied using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS, and ultraviolet photoelectron spectroscopy (UPS. The work functions of FLG and MWCNTs are 4.01 eV and 3.79 eV, respectively, obtained from UPS (He-I spectra. UPS (He-II results suggest that the density of states (DOS of MWCNTs is higher than FLG and is consistent with Raman spectroscopy result that shows the defect of MWCNTs is higher than FLG. The magnetic coercivity (Hc of the MWCNTs (~750 Oe is higher than FLG (~85 Oe which could be used for various technological magnetic applications.

  17. Local Electronic Structure of a Single-Layer Porphyrin-Containing Covalent Organic Framework

    KAUST Repository

    Chen, Chen

    2017-12-20

    We have characterized the local electronic structure of a porphyrin-containing single-layer covalent organic framework (COF) exhibiting a square lattice. The COF monolayer was obtained by the deposition of 2,5-dimethoxybenzene-1,4-dicarboxaldehyde (DMA) and 5,10,15,20-tetrakis(4-aminophenyl) porphyrin (TAPP) onto a Au(111) surface in ultrahigh vacuum followed by annealing to facilitate Schiff-base condensations between monomers. Scanning tunneling spectroscopy (STS) experiments conducted on isolated TAPP precursor molecules and the covalently linked COF networks yield similar transport (HOMO-LUMO) gaps of 1.85 ± 0.05 eV and 1.98 ± 0.04 eV, respectively. The COF orbital energy alignment, however, undergoes a significant downward shift compared to isolated TAPP molecules due to the electron-withdrawing nature of the imine bond formed during COF synthesis. Direct imaging of the COF local density of states (LDOS) via dI/dV mapping reveals that the COF HOMO and LUMO states are localized mainly on the porphyrin cores and that the HOMO displays reduced symmetry. DFT calculations reproduce the imine-induced negative shift in orbital energies and reveal that the origin of the reduced COF wave function symmetry is a saddle-like structure adopted by the porphyrin macrocycle due to its interactions with the Au(111) substrate.

  18. Solution-Processed Lithium-Doped ZnO Electron Transport Layer for Efficient Triple Cation (Rb, MA, FA) Perovskite Solar Cells.

    Science.gov (United States)

    Mahmud, Md Arafat; Elumalai, Naveen Kumar; Upama, Mushfika Baishakhi; Wang, Dian; Soufiani, Arman Mahboubi; Wright, Matthew; Xu, Cheng; Haque, Faiazul; Uddin, Ashraf

    2017-10-04

    The current work reports the lithium (Li) doping of a low-temperature processed zinc oxide (ZnO) electron transport layer (ETL) for highly efficient, triple-cation-based MA 0.57 FA 0.38 Rb 0.05 PbI 3 (MA: methylammonium, FA: formamidinium, Rb: rubidium) perovskite solar cells (PSCs). Lithium intercalation in the host ZnO lattice structure is dominated by interstitial doping phenomena, which passivates the intrinsic defects in ZnO film. In addition, interstitial Li doping also downshifts the Fermi energy position of Li-doped ETL by 30 meV, which contributes to the reduction of the electron injection barrier from the photoactive perovskite layer. Compared to the pristine ZnO, the power conversion efficiency (PCE) of the PSCs incorporating lithium-doped ZnO (Li-doped) is raised from 14.07 to 16.14%. The superior performance is attributed to the reduced current leakage, enhanced charge extraction characteristics, and mitigated trap-assisted recombination phenomena in Li-doped devices, thoroughly investigated by means of electrochemical impedance spectroscopy (EIS) analysis. Li-doped PSCs also exhibit lower photocurrent hysteresis than ZnO devices, which is investigated with regard to the electrode polarization phenomena of the fabricated devices.

  19. Green phosphorescent organic light-emitting devices based on different electron transport layers combining with fluorescent sub-monolayer

    Science.gov (United States)

    Yang, Hui-shan; Guo, Hui-yu; Wu, Li-shuang

    2017-03-01

    We report a small molecule host of 4,4(-N,N)-dicarbazole-biphenyl (CBP) doped with 8% tris(2-phenylpyridine) iridium (Irppy3) for use in efficient green phosphorescent organic light-emitting devices (PHOLEDs) combined with different electron transport layers of Alq and BAlq. The PHOLEDs exhibit maximum current efficiency and power efficiency of 19.8 cd/A and 6.21 lm/W, respectively. The high performance of such PHOLEDs is attributed to the better electron mobile ability of BAlq and sub-monolayer quinacridone (QAD) as carrier trapping layer and equal charge carrier mobilities of hole and electron to form the broad carrier recombination zone in the emitting layer, which can reduce the triplet-triplet annihilation and improve the efficiency of the device.

  20. Investigating the effect of in ovo injection of silver nanoparticles on fat uptake and development in broiler and layer hatchlings

    DEFF Research Database (Denmark)

    Pineda, Lane Manalili; Chwalibog, André; Sawosz, Ewa

    2012-01-01

    Silver nanoparticles (AgNano) as carrier of available oxygen (O2) and with high surface reactivity may increase O2 consumption, enhance fat uptake (FU), and stimulate growth and development. The objective was to investigate the effects of in ovo injection of AgNano on the metabolic rate (O2......Nano affected metabolic rate and FU; however, it did not influence the development of hatchlings. This suggests that in ovo injection of AgNano reduces the need to use yolk fat as an energy source during embryonic development and consequently the remaining fat in the residual yolk sac may provide a potent...... source of nutritional reserves for chicks of few days after hatching....

  1. Electronic and optical properties of vacancy defects in single-layer transition metal dichalcogenides

    Science.gov (United States)

    Khan, M. A.; Erementchouk, Mikhail; Hendrickson, Joshua; Leuenberger, Michael N.

    2017-06-01

    A detailed first-principles study has been performed to evaluate the electronic and optical properties of single-layer (SL) transition metal dichalcogenides (TMDCs) (M X 2 ; M = transition metal such as Mo, W, and X = S, Se, Te), in the presence of vacancy defects (VDs). Defects usually play an important role in tailoring electronic, optical, and magnetic properties of semiconductors. We consider three types of VDs in SL TMDCs: (i) X vacancy, (ii) X2 vacancy, and (iii) M vacancy. We show that VDs lead to localized defect states (LDS) in the band structure, which in turn gives rise to sharp transitions in in-plane and out-of-plane optical susceptibilities, χ∥ and χ⊥. The effects of spin-orbit coupling (SOC) are also considered. We find that SOC splitting in LDS is directly related to the atomic number of the transition metal atoms. Apart from electronic and optical properties we also find magnetic signatures (local magnetic moment of ˜μB ) in MoSe2 in the presence of the Mo vacancy, which breaks the time-reversal symmetry and therefore lifts the Kramers degeneracy. We show that a simple qualitative tight-binding model (TBM), involving only the hopping between atoms surrounding the vacancy with an on-site SOC term, is sufficient to capture the essential features of LDS. In addition, the existence of the LDS can be understood from the solution of the two-dimensional Dirac Hamiltonian by employing infinite mass boundary conditions. In order to provide a clear description of the optical absorption spectra, we use group theory to derive the optical selection rules between LDS for both χ∥ and χ⊥.

  2. Numerical study of the electro–thermo-convection in an annular dielectric layer subjected to a partial unipolar injection

    International Nuclear Information System (INIS)

    Hassen, Walid; Elkhazen, Mohamed Issam; Traore, Philippe; Borjini, Mohamed Naceur

    2014-01-01

    Highlights: • We investigate numerically the phenomenon of electro–thermo-convection in an annular space. • We show the appearance of a multicellular flow. • We show the enhancement of heat transfer by partial unipolar injection of electric charge. • We analyze the effect of the radius ratio and the electric Rayleigh number on the flow. - Abstract: This article deals with the problem of electro–thermo-hydro-dynamic (ETHD) in a dielectric liquid placed between two horizontal isothermal coaxial cylinders and subjected to the simultaneous action of a thermal gradient and an electric field. The full set of equations describing the combined ETHD flow is directly solved using the control-volume method. The effect of electroconvective motion was investigated in details in the case of strong unipolar injection from the half bottom of the inner cylinder. We focused mainly on enhancing the heat transfer by unipolar injection of electric charge in the dead zone (bottom area) of the annular space. The results show the emergence of a multicellular flow in this dead zone which enhances the heat transfer up to 170%. The flow structure in terms of stream lines, distribution of electric charge density and thermal field is highlighted. The effect of various system parameters in particular the radius ratio, the electric Rayleigh number is investigated too

  3. Performance and combustion analysis of Mahua biodiesel on a single cylinder compression ignition engine using electronic fuel injection system

    Directory of Open Access Journals (Sweden)

    Gunasekaran Anandkumar

    2016-01-01

    Full Text Available In this investigation, experiment is carried out on a 1500 rpm constant speed single cylinder Diesel engine. The test is carried out with Neat diesel, neat biodiesel, and blend B20. The engine considered was run with electronic fuel injection system supported by common rail direct injection to obtain high atomization and effective air utilization inside the combustion chamber. The performance of the engine in terms of break thermal efficiency and brake specific energy consumption was found and compared. The B20 blend shows 1.11% decrease in break thermal efficiency and 3.35% increase in brake specific energy consumption than diesel. The combustion characteristics found are in-cylinder pressure, rate of pressure rise, and heat release rate and compared for peak pressure load to understand the nature of combustion process. For each fuel test run, the maximum peak pressure is observed at part load condition. The rate of change of pressure and heat release rate of diesel is high compared to pure biodiesel and B20 blend. The diffusion combustion is observed to be predominant in case of B100 than B20 and Neat diesel.

  4. Coal-water slurry sprays from an electronically controlled accumulator fuel injection system: Break-up distances and times

    Science.gov (United States)

    Caton, J. A.; Payne, S. E.; Terracina, D. P.; Kihm, K. D.

    Experiments have been completed to characterize coal-water slurry sprays from an electronically-controlled accumulator fuel injection system of a diesel engine. The sprays were injected into a pressurized chamber equipped with windows. High speed movies, fuel pressures, and needle lifts were obtained as a function of time, orifice diameter, coal loading, gas density in the chamber, and accumulator fuel pressure. For the base conditions (50% by mass coal loading, 0.4 mm diameter nozzle hole, coal-water slurry pressure of 82 MPa (12,000 psi), and a chamber density of 25 kg/m(exp 3)), the break-up time was 0.30 ms. An empirical correlation for spray tip penetration, break-up time, and initial jet velocity was developed. For the conditions of this study, the spray tip penetration and initial jet velocity were 15% greater for coal-water slurry than for diesel fuel or water. Results of this study and the correlation are specific to the tested coal-water slurry and are not general for other coal-water slurry fuels.

  5. Structure and wear resistance of Ti-TiC-TiB layers obtained by non-vacuum electron beam cladding

    OpenAIRE

    Lenivtseva Olga; Chuchkova Lyubov; Krivezhenko Dina

    2017-01-01

    In this study structure and tribotechnical properties of cp-titanium after non-vacuum electron beam cladding of powder mixture containing boron carbide were investigated. Structural investigations were carried out using optical and scanning electron microscopy and X-ray analysis. The thickness of cladded layers was 1.3…2.5 mm. The beam moving speed was not influence the phase composition of coatings. The main phases of the surface layers were α- titanium (α′.- titanium), titanium carbide TiC ...

  6. Investigation of the stability of polysilicon layers in SOI-structures under irradiation by electrons and hard magnetic field influence

    Directory of Open Access Journals (Sweden)

    Khoverko Yu. N.

    2010-10-01

    Full Text Available The properties of recrystallized polysilicon on insulator layers of p-type conductive SOI-structures with different carrier concentration irradiated with high-energy electrons flow about 1017 сm–2 in temperature range 4,2—300 К and high magnetic fields were investigated. It was found that heavily doped laser recrystallized polysilicon on insulator layers show its radiation resistance under irradiation with high-energy electrons and magnetoresistance of such material remains quite low in magnetic field about 14 T does not exceed 1—2%. Such qulity can be applied in designing of microelectronic sensors of mechanical values operable in hard conditions of exploitation.

  7. Analog front-end electronics for the outer layers of the SuperB SVT: Design and expected performances

    Science.gov (United States)

    Bombelli, Luca; Fiorini, Carlo; Nasri, Bayan; Trigilio, Paolo; Citterio, Mauro; Neri, Nicola

    2013-08-01

    The Silicon Vertex Tracker (SVT) of the new SuperB collider will be composed of 6 different detector layers [1]. The innermost layer (L0) will be composed by striplets or pixels [2]; the other 5 detector layers will be double-sided long-strip detectors. The strip geometries and the foreseen hit-rates will change according to the different layers. As a consequence, different optimization of the analog read-out electronics is needed in order to provide high detection-efficiency and low noise level in the different layers. Two readout ASICs are currently developed, one for layers 0-3, another for layers 4 and 5; they differ mainly in the analog front-end. In this work, we present the design and the expected performances of the analog front-end for layers 4 and 5. For these layers, the strip detectors show a very high stray capacitance and high series resistance. In this condition, the noise optimization is our primary concern. A necessary compromise on the best peaking time to achieve an acceptable noise level together with efficiency and timing accuracy has been found. We will present the design of preamplifier and shaper and the results of simulation of noise performance and efficiency (with the expected background rates). In addition, the design of the time-over-threshold and its use to correct the time-walk of the event trigger is discussed as well as the achievable timing accuracy of the circuit.

  8. Fabrication of metallic single electron transistors featuring plasma enhanced atomic layer deposition of tunnel barriers

    Science.gov (United States)

    Karbasian, Golnaz

    The continuing increase of the device density in integrated circuits (ICs) gives rise to the high level of power that is dissipated per unit area and consequently a high temperature in the circuits. Since temperature affects the performance and reliability of the circuits, minimization of the energy consumption in logic devices is now the center of attention. According to the International Technology Roadmaps for Semiconductors (ITRS), single electron transistors (SETs) hold the promise of achieving the lowest power of any known logic device, as low as 1x10-18 J per switching event. Moreover, SETs are the most sensitive electrometers to date, and are capable of detecting a fraction of an electron charge. Despite their low power consumption and high sensitivity for charge detection, room temperature operation of these devices is quite challenging mainly due to lithographical constraints in fabricating structures with the required dimensions of less than 10 nm. Silicon based SETs have been reported to operate at room temperature. However, they all suffer from significant variation in batch-to-batch performance, low fabrication yield, and temperature-dependent tunnel barrier height. In this project, we explored the fabrication of SETs featuring metal-insulator-metal (MIM) tunnel junctions. While Si-based SETs suffer from undesirable effect of dopants that result in irregularities in the device behavior, in metal-based SETs the device components (tunnel barrier, island, and the leads) are well-defined. Therefore, metal SETs are potentially more predictable in behavior, making them easier to incorporate into circuits, and easier to check against theoretical models. Here, the proposed fabrication method takes advantage of unique properties of chemical mechanical polishing (CMP) and plasma enhanced atomic layer deposition (PEALD). Chemical mechanical polishing provides a path for tuning the dimensions of the tunnel junctions, surpassing the limits imposed by electron beam

  9. Modification of electronic properties of top-gated graphene devices by ultrathin yttrium-oxide dielectric layers.

    Science.gov (United States)

    Wang, Lin; Chen, Xiaolong; Wang, Yang; Wu, Zefei; Li, Wei; Han, Yu; Zhang, Mingwei; He, Yuheng; Zhu, Chao; Fung, Kwok Kwong; Wang, Ning

    2013-02-07

    We report the structure characterization and electronic property modification of single layer graphene (SLG) field-effect transistor (FET) devices top-gated using ultrathin Y(2)O(3) as dielectric layers. Based on the Boltzmann transport theory within variant screening, Coulomb scattering is confirmed quantitatively to be dominant in Y(2)O(3)-covered SLG and a very few short-range impurities have been introduced by Y(2)O(3). Both DC transport and AC capacitance measurements carried out at cryogenic temperatures demonstrate that the broadening of Landau levels is mainly due to the additional charged impurities and inhomogeneity of carriers induced by Y(2)O(3) layers.

  10. Strengthening effect of nano-scaled precipitates in Ta alloying layer induced by high current pulsed electron beam

    International Nuclear Information System (INIS)

    Tang, Guangze; Luo, Dian; Fan, Guohua; Ma, Xinxin; Wang, Liqin

    2017-01-01

    Highlights: • Ta alloying layer are fabricated by magnetron sputtering and high current pulsed electron beam. • Nano-scaled TaC precipitates forms within the δ-Fe grain after tempering treatment. • The mean diameter of TaC particles is about 5–8 nm. • The hardness of alloying layer increased by over 50% after formation of nano-scaled TaC particle. - Abstract: In this study, the combination of magnetron sputtering and high current pulsed electron beam are used for surface alloying treatment of Ta film on high speed steel. And the Ta alloying layer is about 6 μm. After tempering treatment, TaC phase forms in Ta alloying layer when the treated temperature is over 823 K. Through the TEM and HRTEM observation, a large amount of nano-scaled precipitates (mean diameter 5–8 nm) form within the δ-Fe grain in Ta alloying layer after tempering treatment and these nano-scaled precipitates are confirmed as TaC particles, which contribute to the strengthening effect of the surface alloying layer. The hardness of tempered alloying layer can reach to 18.1 GPa when the treated temperature is 823 K which increase by 50% comparing with the untreated steel sample before surface alloying treatment.

  11. Strengthening effect of nano-scaled precipitates in Ta alloying layer induced by high current pulsed electron beam

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Guangze; Luo, Dian; Fan, Guohua [School of Material Science & Engineering, Harbin Institute of Technology, Harbin 150001 (China); Ma, Xinxin, E-mail: maxin@hit.edu.cn [State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001 (China); Wang, Liqin [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China)

    2017-05-01

    Highlights: • Ta alloying layer are fabricated by magnetron sputtering and high current pulsed electron beam. • Nano-scaled TaC precipitates forms within the δ-Fe grain after tempering treatment. • The mean diameter of TaC particles is about 5–8 nm. • The hardness of alloying layer increased by over 50% after formation of nano-scaled TaC particle. - Abstract: In this study, the combination of magnetron sputtering and high current pulsed electron beam are used for surface alloying treatment of Ta film on high speed steel. And the Ta alloying layer is about 6 μm. After tempering treatment, TaC phase forms in Ta alloying layer when the treated temperature is over 823 K. Through the TEM and HRTEM observation, a large amount of nano-scaled precipitates (mean diameter 5–8 nm) form within the δ-Fe grain in Ta alloying layer after tempering treatment and these nano-scaled precipitates are confirmed as TaC particles, which contribute to the strengthening effect of the surface alloying layer. The hardness of tempered alloying layer can reach to 18.1 GPa when the treated temperature is 823 K which increase by 50% comparing with the untreated steel sample before surface alloying treatment.

  12. Properties of dye-sensitized solar cells with TiO2 passivating layers prepared by electron-beam evaporation.

    Science.gov (United States)

    Jin, Young Sam; Choi, Hyung Wook

    2012-01-01

    The aim of this work is to prevent back transfer of electrons due to direct contact between the electrolyte and the FTO glass substrate using a TiO2 passivating layer. The TiO2 passivating layer was deposited on FTO glass by e-beam evaporation. The TiO2 film was prepared with different deposition rates. The specific surface area was reduced with increasing deposition rate. The nanoporous TiO2 upper layer was coated by screen-printing on the TiO2 passivating layer prepared by e-beam evaporation. The optical transmittance and absorbance of the TiO2 films depend on the morphology of the TiO2 passivating layer. The dye-sensitized solar cells influenced the surface morphology of the TiO2 passivating layer. The dye-sensitized solar cell using the TiO2 passivating layer recorded a maximum conversion efficiency of 4.93% due to effective prevention of the electron recombination to the electrolyte.

  13. Structure and Electronic Properties of In Situ Synthesized Single-Layer MoS2 on a Gold Surface

    DEFF Research Database (Denmark)

    Sørensen, Signe Grønborg; Füchtbauer, Henrik Gøbel; Tuxen, Anders Kyrme

    2014-01-01

    with scanning tunneling microscopy and X-ray photoelectron spectroscopy characterization of two-dimensional single-layer islands of MoS2 synthesized directly on a gold single crystal substrate. Thanks to a periodic modulation of the atom stacking induced by the lattice mismatch, we observe a structural buckling...... structure appears modified at the band gap edges. This electronic effect is further modulated by the moiré periodicity and leads to small substrate-induced electronic perturbations near the conduction band minimum in the band gap of MoS2. The results may be highly relevant in the context of nanopatterned......When transition metal sulfides such as MoS2 are present in the single-layer form, the electronic properties change in fundamental ways, enabling them to be used, e.g., in two-dimensional semiconductor electronics, optoelectronics, and light harvesting. The change is related to a subtle modification...

  14. Plasma and energetic electron flux variations in the Mercury 1 C event: Evidence for a magnetospheric boundary layer

    International Nuclear Information System (INIS)

    Christon, S.P.

    1989-01-01

    Near the outbound magnetopause crossing during the first encounter of Mariner 10 with the planet Mercury on March 29, 1974, large intensity, ∼ 6 s quasi-periodic variations in the intensity-time profile of the charged particle experiment's electron counting rate appeared as a series of peaks and valleys. The peaks have previously been interpreted as quasi-periodic burst sequences of mildly relativistic electrons, caused in one case by episodic ∼ 6-s magnetotail substorm reconnection events and in another case by multiple encounters with a substorm energized electron population drifting around Mercury with an ∼ 6 s drift period. In this paper, the authors offer a new and fundamentally different interpretation of the Mariner 10 energetic electron, plasma electron, and magnetic field data near the outbound magnetopause at Mercury 1. They show that magnetosheath-like boundary layer plasma was observed up to ∼ 360 km planetward of the dawn magnetopause crossing as sensed by the magnetometer. They show that observations of substorm enhanced > 35 keV electron flux (that previously interpreted as > 175 keV electrons) associated with the hot tenuous plasma sheet population were interleaved with ∼ 6 s period observations of a cold dense boundary layer plasma associated with a much lower > 35 keV electron flux. They argue that the ∼ 6 s temporal signature is due to variation of the thickness and/or position of the boundary layer plasma population. This explanation of the ∼ 6-s variations, based upon the analysis of the coincident responses of the magnetic field experiment and two independent charged particle instruments (at their highest temporal resolutions), finds a direct analogue in observations of Earth's magnetospheric boundary layer, although the time scales are significantly shorter at Mercury

  15. Real-time observation of ultrafast electron injection at graphene–Zn porphyrin interfaces

    KAUST Repository

    Masih, Dilshad

    2015-02-25

    We report on the ultrafast interfacial electron transfer ( ET) between zinc( II) porphyrin ( ZnTMPyP) and negatively charged graphene carboxylate ( GC) using state- of- the- art femtosecond laser spectroscopy with broadband capabilities. The steady- state interaction between GC and ZnTMPyP results in a red- shifted absorption spectrum, providing a clear indication for the binding affinity between ZnTMPyP and GC via electrostatic and p- p stacking interactions. Ultrafast transient absorption ( TA) spectra in the absence and presence of three different GC concentrations reveal ( i) the ultrafast formation of singlet excited ZnTMPyP*, which partially relaxes into a long- lived triplet state, and ( ii) ET from the singlet excited ZnTMPyP* to GC, forming ZnTMPyP + and GC , as indicated by a spectral feature at 650- 750 nm, which is attributed to a ZnTMPyP radical cation resulting from the ET process.

  16. Electron density and plasma waves in mid-latitude sporadic-E layer observed during the SEEK-2 campaign

    Directory of Open Access Journals (Sweden)

    H. Mori

    2005-10-01

    Full Text Available The SEEK-2 campaign was carried out over Kyushu Island in Japan on 3 August 2002, by using the two sounding rockets of S310-31 and S310-32. This campaign was planned to elucidate generation mechanisms of Quasi-Periodic Echoes (QPEs associated with mid-latitude sporadic-E (Es layers. Electron number densities were successfully measured in the Es layers by using the impedance probe on board two rockets. The plasma waves in the VLF and ELF ranges were also observed on board the S310-32 rocket. Results of electron density measurement showed that there were one or two major peaks in the Es layers along the rockets' trajectories near the altitude of about 10km. There were some smaller peaks associated with the main Es layers in the altitude range from 90 to 120 km. These density peaks were distributed in a very large extent during the SEEK-2 campaign. The Es layer structure is also measured by using the Fixed Bias Probe (FBP, which has a high spatial resolution of several meters (the impedance probe has an altitude resolution of about 400 m. The comparison with the total electron content (TEC measured by the Dual Band Beacon revealed that the Es layer was also modulated in the horizontal direction with the scale size of 30–40 km. It was shown that the QP echoes observed by the ground-based coherent radar come from the major density peak of the Es layer. The plasma wave instrument detected the enhancement of VLF and ELF plasma waves associated with the operation of the TMA release, and also with the passage of the Es layers. Keywords. Ionosphere (Ionospheric irregularities; Midlatitude ionosphere; Plasma temeperature and density

  17. Spatial Atmospheric Pressure Atomic Layer Deposition of Tin Oxide as an Impermeable Electron Extraction Layer for Perovskite Solar Cells with Enhanced Thermal Stability.

    Science.gov (United States)

    Hoffmann, Lukas; Brinkmann, Kai O; Malerczyk, Jessica; Rogalla, Detlef; Becker, Tim; Theirich, Detlef; Shutsko, Ivan; Görrn, Patrick; Riedl, Thomas

    2018-02-14

    Despite the notable success of hybrid halide perovskite-based solar cells, their long-term stability is still a key-issue. Aside from optimizing the photoactive perovskite, the cell design states a powerful lever to improve stability under various stress conditions. Dedicated electrically conductive diffusion barriers inside the cell stack, that counteract the ingress of moisture and prevent the migration of corrosive halogen species, can substantially improve ambient and thermal stability. Although atomic layer deposition (ALD) is excellently suited to prepare such functional layers, ALD suffers from the requirement of vacuum and only allows for a very limited throughput. Here, we demonstrate for the first time spatial ALD-grown SnO x at atmospheric pressure as impermeable electron extraction layers for perovskite solar cells. We achieve optical transmittance and electrical conductivity similar to those in SnO x grown by conventional vacuum-based ALD. A low deposition temperature of 80 °C and a high substrate speed of 2.4 m min -1 yield SnO x layers with a low water vapor transmission rate of ∼10 -4 gm -2 day -1 (at 60 °C/60% RH). Thereby, in perovskite solar cells, dense hybrid Al:ZnO/SnO x electron extraction layers are created that are the key for stable cell characteristics beyond 1000 h in ambient air and over 3000 h at 60 °C. Most notably, our work of introducing spatial ALD at atmospheric pressure paves the way to the future roll-to-roll manufacturing of stable perovskite solar cells.

  18. Electronic properties of {mu}c-Si:H layers investigated with Hall measurements

    Energy Technology Data Exchange (ETDEWEB)

    Bronger, T.

    2007-02-28

    In the present work, the electronic properties of thin layers of PECVD-grown {mu}c-Si:H have been examined using the Hall effect. The main focus was on the mobility of the carriers because this is a crucial limiting factor for the electronic quality of this material, however, the density of free carriers as well as the conductivity were also determined. In order to get a picture as comprehensive as possible, a sample matrix was studied consisting of samples with different n-type doping levels and different crystallinities. Additionally, doped samples with artificially implanted defects which could be annealed gradually were investigated. All measurements have been made temperature-dependently. During the work, a new computer control and analysis program was developed from scratch for the Hall setup. It allows for high automation as well as comprehensive error estimation, both of which being very important for high ohmic samples. All samples showed a thermally activated mobility and carrier concentration, however, there is no single activation energy. Instead, all Arrhenius plots exhibited a more or less pronounced convex curvature. This curvature was identified with the parallel connection of a broad distribution of barriers in the material, which are limiting to the transport and are overcome by thermoionic emission. From this, the model of normally distributed barriers (NDB) was derived, mathematically investigated, and successfully applied to the experimental data of this work and (for not too highly doped samples) of other works. As a significant validation of the NDB model, the relative room-temperature mobility values could be calculated just from the Arrhenius slopes and curvatures. A very important dependence turned out to be mobility versus carrier concentration. In particular the annealed sample showed a clear {mu} {proportional_to} n{sup 1/2} behaviour, which could be backed with the sample matrix. Additionally, Hall measurements on HWCVD-grown {mu

  19. Determination of the optimized single-layer ionospheric height for electron content measurements over China

    Science.gov (United States)

    Li, Min; Yuan, Yunbin; Zhang, Baocheng; Wang, Ningbo; Li, Zishen; Liu, Xifeng; Zhang, Xiao

    2018-02-01

    The ionosphere effective height (IEH) is a very important parameter in total electron content (TEC) measurements under the widely used single-layer model assumption. To overcome the requirement of a large amount of simultaneous vertical and slant ionospheric observations or dense "coinciding" pierce points data, a new approach comparing the converted vertical TEC (VTEC) value using mapping function based on a given IEH with the "ground truth" VTEC value provided by the combined International GNSS Service Global Ionospheric Maps is proposed for the determination of the optimal IEH. The optimal IEH in the Chinese region is determined using three different methods based on GNSS data. Based on the ionosonde data from three different locations in China, the altitude variation of the peak electron density (hmF2) is found to have clear diurnal, seasonal and latitudinal dependences, and the diurnal variation of hmF2 varies from approximately 210 to 520 km in Hainan. The determination of the optimal IEH employing the inverse method suggested by Birch et al. (Radio Sci 37, 2002. doi: 10.1029/2000rs002601) did not yield a consistent altitude in the Chinese region. Tests of the method minimizing the mapping function errors suggested by Nava et al. (Adv Space Res 39:1292-1297, 2007) indicate that the optimal IEH ranges from 400 to 600 km, and the height of 450 km is the most frequent IEH at both high and low solar activities. It is also confirmed that the IEH of 450-550 km is preferred for the Chinese region instead of the commonly adopted 350-450 km using the determination method of the optimal IEH proposed in this paper.

  20. Plasma simulation by macroscale, electromagnetic particle code and its application to current-drive by relativistic electron beam injection

    International Nuclear Information System (INIS)

    Tanaka, M.; Sato, T.

    1985-01-01

    A new implicit macroscale electromagnetic particle simulation code (MARC) which allows a large scale length and a time step in multi-dimensions is described. Finite mass electrons and ions are used with relativistic version of the equation of motion. The electromagnetic fields are solved by using a complete set of Maxwell equations. For time integration of the field equations, a decentered (backward) finite differencing scheme is employed with the predictor - corrector method for small noise and super-stability. It is shown both in analytical and numerical ways that the present scheme efficiently suppresses high frequency electrostatic and electromagnetic waves in a plasma, and that it accurately reproduces low frequency waves such as ion acoustic waves, Alfven waves and fast magnetosonic waves. The present numerical scheme has currently been coded in three dimensions for application to a new tokamak current-drive method by means of relativistic electron beam injection. Some remarks of the proper macroscale code application is presented in this paper

  1. Influence of the number of layers on ultrathin CsSnI3 perovskite: from electronic structure to carrier mobility

    Science.gov (United States)

    Liu, Biao; Long, Mengqiu; Cai, Meng-Qiu; Yang, Junliang

    2018-03-01

    Inorganic halide perovskites have attracted great attention in recent years as promising materials for optoelectronic devices, with ultrathin inorganic halide perovskites showing excellent properties and great potential applications. Herein, the intrinsic electronic and optical properties of ultrathin cesium tin tri-iodide (CsSnI3) perovskite with a varying number of layers are explored using first-principles calculations. The results reveal that ultrathin CsSnI3 is a direct band gap semiconductor, and the band gap continues to increase to 1.83 eV from 1.28 eV as the number of layers is reduced to one layer from the bulk. By decreasing the number of layers, the effective mass of ultrathin CsSnI3 increases, and the optical absorption intensity along the x and y directions shows that the linear dichroism becomes stronger and stronger. Furthermore, the carrier mobilities (µ) can be predicted, and they show obvious in-plane anisotropy. The µ of the electrons is higher than that of the holes, and the electron mobility along the y direction is higher than that along the x direction. The layer thickness does not distinctly influence the µ. The difference in the atomic orbital distribution has the nature of obvious anisotropy in ultrathin CsSnI3. This work suggests that ultrathin inorganic perovskite could be a potential candidate for future nano-optoelectronic devices.

  2. Three-dimensional architecture hybrid perovskite solar cells using CdS nanorod arrays as an electron transport layer

    Science.gov (United States)

    Song, Zihang; Tong, Guoqing; Li, Huan; Li, Guopeng; Ma, Shuai; Yu, Shimeng; Liu, Qian; Jiang, Yang

    2018-01-01

    Three-dimensional (3D) architecture perovskite solar cells (PSCs) using CdS nanorod (NR) arrays as an electron transport layer were designed and prepared layer-by-layer via a physical-chemical vapor deposition (P-CVD) process. The CdS NRs not only provided a scaffold to the perovskite film, but also increased the interfacial contact between the perovskite film and electron transport layer. As an optimized result, a high power conversion efficiency of 12.46% with a short-circuit current density of 19.88 mA cm‑2, an open-circuit voltage of 1.01 V and a fill factor of 62.06% was obtained after 12 h growth of CdS NRs. It was four times the efficiency of contrast planar structure with a similar thickness. The P-CVD method assisted in achieving flat and voidless CH3NH3PbI3‑x Cl x perovskite film and binding the CdS NRs and perovskite film together. The different density of CdS NRs had obvious effects on light transmittance of 350–550 nm, the interfacial area and the difficulty of combining layers. Moreover, the efficient 1D transport paths for electrons and multiple absorption of light, which are generated in 3D architecture, were beneficial to realize a decent power conversion efficiency.

  3. Patient assessment of an electronic device for subcutaneous self-injection of interferon ß-1a for multiple sclerosis: an observational study in the UK and Ireland

    Directory of Open Access Journals (Sweden)

    D'Arcy C

    2012-01-01

    Full Text Available Caroline D’Arcy1, Del Thomas2, Dee Stoneman3, Laura Parkes31West London Neuroscience Centre, Charing Cross Hospital, London, UK; 2Wye Valley NHS Trust, Hereford, UK; 3Merck Serono Ltd, Feltham, Middlesex, UKBackground: Injectable disease-modifying drugs (DMDs reduce the number of relapses and delay disability progression in patients with relapsing–remitting multiple sclerosis (RRMS. Regular self-injection can be stressful and impeded by MS symptoms. Auto-injection devices can simplify self-injection, overcome injection-related issues, and increase treatment satisfaction. This study investigated patient responses to an electronic auto-injection device.Methods: Patients with RRMS (n = 63, aged 18–65 years, naïve to subcutaneous (sc interferon (IFN ß-1a therapy, were recruited to a Phase IV, observational, open-label, multicenter study (NCT01195870. Patients self-injected sc IFN ß-1a using the RebiSmart™ (Merck Serono S.A. – Geneva, Switzerland electronic auto-injector for 12 weeks, including an initial titration period if recommended by the prescribing physician. In week 12, patients completed a questionnaire comprising of a visual analog scale (VAS to rate how much they liked using the device, a four-point response question on ease of use (‘very difficult’, ‘difficult’, ‘easy’, or ‘very easy’, and a list of ten device functions to rank, based upon their experiences.Results: Six patients (9.5% discontinued the study: one switched to manual injection; two discontinued all treatment; three changed therapy. In total, 59 out of 63 patients (93.7% completed the VAS; 54 out of 59 (91.5%; 95% confidence interval: 81.3%–97.2% ‘liked’ using the electronic auto-injector (score ≥6, whereas 57 out of 59 (96.6% rated the device overall as ‘easy’ or ‘very easy’ to use. Device features rated as most useful were the hidden needle (mean [standard deviation] score: 3.3 [3.01]; n = 56, confirmation sound (3.9 [2.45], and

  4. N-type polymers as electron extraction layers in hybrid perovskite solar cells with improved ambient stability

    NARCIS (Netherlands)

    Shao, S.; Chen, Z.; Fang, H. -H.; ten Brink, G. H.; Bartesaghi, D.; Adjokatse, S.; Koster, L. J. A.; Kooi, B. J.; Facchetti, A.; Loi, M. A.

    2016-01-01

    We studied three n-type polymers of the naphthalenediimide-bithiophene family as electron extraction layers (EELs) in hybrid perovskite solar cells. The recombination mechanism in these devices is found to be heavily influenced by the EEL transport properties. The maximum efficiency of the devices

  5. O3 Layers via Spray Pyrolysis at Low Temperatures and Their Application in High Electron Mobility Transistors

    KAUST Repository

    Isakov, Ivan

    2017-04-06

    The growth mechanism of indium oxide (InO) layers processed via spray pyrolysis of an aqueous precursor solution in the temperature range of 100-300 °C and the impact on their electron transporting properties are studied. Analysis of the droplet impingement sites on the substrate\\'s surface as a function of its temperature reveals that Leidenfrost effect dominated boiling plays a crucial role in the growth of smooth, continuous, and highly crystalline InO layers via a vapor phase-like process. By careful optimization of the precursor formulation, deposition conditions, and choice of substrate, this effect is exploited and ultrathin and exceptionally smooth layers of InO are grown over large area substrates at temperatures as low as 252 °C. Thin-film transistors (TFTs) fabricated using these optimized InO layers exhibit superior electron transport characteristics with the electron mobility reaching up to 40 cm V s, a value amongst the highest reported to date for solution-processed InO TFTs. The present work contributes enormously to the basic understanding of spray pyrolysis and highlights its tremendous potential for large-volume manufacturing of high-performance metal oxide thin-film transistor electronics.

  6. Electron Beam-Induced Deposition for Atom Probe Tomography Specimen Capping Layers.

    Science.gov (United States)

    Diercks, David R; Gorman, Brian P; Mulders, Johannes J L

    2017-04-01

    Six precursors were evaluated for use as in situ electron beam-induced deposition capping layers in the preparation of atom probe tomography specimens with a focus on near-surface features where some of the deposition is retained at the specimen apex. Specimens were prepared by deposition of each precursor onto silicon posts and shaped into sub-70-nm radii needles using a focused ion beam. The utility of the depositions was assessed using several criteria including composition and uniformity, evaporation behavior and evaporation fields, and depth of Ga+ ion penetration. Atom probe analyses through depositions of methyl cyclopentadienyl platinum trimethyl, palladium hexafluoroacetylacetonate, and dimethyl-gold-acetylacetonate [Me2Au(acac)] were all found to result in tip fracture at voltages exceeding 3 kV. Examination of the deposition using Me2Au(acac) plus flowing O2 was inconclusive due to evaporation of surface silicon from below the deposition under all analysis conditions. Dicobalt octacarbonyl [Co2(CO)8] and diiron nonacarbonyl [Fe2(CO)9] depositions were found to be effective as in situ capping materials for the silicon specimens. Their very different evaporation fields [36 V/nm for Co2(CO)8 and 21 V/nm for Fe2(CO)9] provide options for achieving reasonably close matching of the evaporation field between the capping material and many materials of interest.

  7. Magnesium-doped Zinc Oxide as Electron Selective Contact Layers for Efficient Perovskite Solar Cells.

    Science.gov (United States)

    Song, Jiaxing; Zheng, Enqiang; Liu, Leijing; Wang, Xiao-Feng; Chen, Gang; Tian, Wenjing; Miyasaka, Tsutomu

    2016-09-22

    The electron-selective contact layer (ESL) in organometal halide-based perovskite solar cells (PSCs) determines not only the power conversion efficiency (PCE) but also the thermostability of PSCs. To improve the thermostability of ZnO-based PSCs, we developed Mg-doped ZnO [Zn 1-x Mg x O (ZMO)] as a high optical transmittance ESL for the methylammonium lead trihalide perovskite absorber [CH 3 NH 3 PbI 3 ]. We further investigated the optical and electrical properties of the ESL films with Mg contents of 0-30 mol % and the corresponding devices. We achieved a maximum PCE of 16.5 % with improved thermal stability of CH 3 NH 3 PbI 3 on ESL with the optimal ZMO (0.4 m) containing 10 mol % Mg. Moreover, this optimized ZMO PSC exhibited significantly improved durability and photostability owing to the improved chemical/photochemical stability of the wider optical bandgap ZMO. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Spin-dependent electron-phonon coupling in the valence band of single-layer WS2

    DEFF Research Database (Denmark)

    Hinsche, Nicki Frank; Ngankeu, Arlette S.; Guilloy, Kevin

    2017-01-01

    The absence of inversion symmetry leads to a strong spin-orbit splitting of the upper valence band of semiconducting single-layer transition-metal dichalchogenides such as MoS2 or WS2. This permits a direct comparison of the electron-phonon coupling strength in states that only differ by their spin....... Here, the electron-phonon coupling in the valence band maximum of single-layer WS2 is studied by first-principles calculations and angle-resolved photoemission. The coupling strength is found to be drastically different for the two spin-split branches, with calculated values of λK=0.0021 and 0.......40 for the upper and lower spin-split valence band of the freestanding layer, respectively. This difference is somewhat reduced when including scattering processes involving the Au(111) substrate present in the experiment but it remains significant, in good agreement with the experimental results....

  9. Thickness-dependent electron mobility of single and few-layer MoS2 thin-film transistors

    Directory of Open Access Journals (Sweden)

    Ji Heon Kim

    2016-06-01

    Full Text Available We investigated the dependence of electron mobility on the thickness of MoS2 nanosheets by fabricating bottom-gate single and few-layer MoS2 thin-film transistors with SiO2 gate dielectrics and Au electrodes. All the fabricated MoS2 transistors showed on/off-current ratio of ∼107 and saturated output characteristics without high-k capping layers. As the MoS2 thickness increased from 1 to 6 layers, the field-effect mobility of the fabricated MoS2 transistors increased from ∼10 to ∼18 cm2V−1s−1. The increased subthreshold swing of the fabricated transistors with MoS2 thickness suggests that the increase of MoS2 mobility with thickness may be related to the dependence of the contact resistance and the dielectric constant of MoS2 layer on its thickness.

  10. Influence of the injected beam parameters on the capture efficiency of an electron cyclotron resonance based charge breeder

    Directory of Open Access Journals (Sweden)

    A. Galatà

    2017-06-01

    Full Text Available Electron cyclotron resonance ion sources based charge breeders (ECR-CB are fundamental devices for Isotope Separation On Line (ISOL facilities aiming at postaccelerating radioactive ion beams (RIBs. Presently, low intensity RIBs do not allow a conventional tuning of the ECR-CB: as a consequence, it has to be set with a stable 1+ pilot beam first, switching then to the radioactive one without changing any parameter; this procedure is usually called “blind tuning.” Besides having different masses, pilot and radioactive beams can also differ in terms of the rms transverse emittance ε_{rms} and/or longitudinal energy spread ΔE, so the choice of a given pilot beam can determine the overall performances of the final breeding stage. This paper shows a numerical study of how the capture efficiency of the PHOENIX charge breeder is affected by the aforementioned beam paramaters: the analysis reveals the two-step nature of the process, highlighting the role of the injection optics and the plasma capture capability in the overall performances of this device. The simulations predict highest efficiency for ε_{rms}<5π  mm mrad and ΔE<5  eV in a optimum energy range between 2 and 6 eV, thus giving important information on the possibility of blindly tuning an ECR-CB. No isotopical effects were observed, while it clearly came out the necessity to improve the 1+ beam characteristics with a rf beam cooler prior to the injection into an ECR-CB.

  11. Direct Observation of the Layer-by-Layer Growth of ZnO Nanopillar by In situ High Resolution Transmission Electron Microscopy

    Science.gov (United States)

    Li, Xing; Cheng, Shaobo; Deng, Shiqing; Wei, Xianlong; Zhu, Jing; Chen, Qing

    2017-01-01

    Catalyst-free methods are important for the fabrication of pure nanowires (NWs). However, the growth mechanism remains elusive due to the lack of crucial information on the growth dynamics at atomic level. Here, the noncatalytic growth process of ZnO NWs is studied through in situ high resolution transmission electron microscopy. We observe the layer-by-layer growth of ZnO nanopillars along the polar [0001] direction under electron beam irradiation, while no growth is observed along the radial directions, indicating an anisotropic growth mechanism. The source atoms are mainly from the electron beam induced damage of the sample and the growth is assisted by subsequent absorption and then diffusion of atoms along the side surface to the top (0002) surface. The different binding energy on different ZnO surface is the main origin for the anisotropic growth. Additionally, the coalescence of ZnO nanocrystals related to the nucleation stage is uncovered to realize through the rotational motions and recrystallization. Our in situ results provide atomic-level detailed information about the dynamic growth and coalescence processes in the noncatalytic synthesis of ZnO NW and are helpful for understanding the vapor-solid mechanism of catalyst-free NW growth. PMID:28098261

  12. Compressive ion acoustic double layer and its transitional properties for a two electron temperature warm, multi-ion plasma

    Science.gov (United States)

    Steffy, S. V.; Ghosh, S. S.

    2018-01-01

    The emergence of the compressive ion acoustic double layer has been investigated for a two electron temperature warm, multi-ion plasma by the Sagdeev pseudopotential technique. It shows that the ambient cooler electron concentration plays a deterministic role in initiating the transition process of a compressive ion acoustic solitary wave to its double layer. Incorporating the derivative analysis for the pseudopotential, the transitional phase was further quantified by assigning a critical value for the ambient cooler electron concentration. It has been observed that, beyond that critical value, the width of the solitary wave increases rapidly with the increasing amplitude which coincides with the aforementioned transitional phase, manifesting a change in the internal microphysics of the structure for that region. A comparison with the satellite observation revealed good agreement validating the present model. The model will be useful in interpreting the observed monopolar structures in the auroral acceleration region.

  13. Optimization of an Electron Transport Layer to Enhance the Power Conversion Efficiency of Flexible Inverted Organic Solar Cells

    Directory of Open Access Journals (Sweden)

    Lee Kang Hyuck

    2010-01-01

    Full Text Available Abstract The photovoltaic (PV performance of flexible inverted organic solar cells (IOSCs with an active layer consisting of a blend of poly(3-hexylthiophene and [6, 6]-phenyl C61-butlyric acid methyl ester was investigated by varying the thicknesses of ZnO seed layers and introducing ZnO nanorods (NRs. A ZnO seed layer or ZnO NRs grown on the seed layer were used as an electron transport layer and pathway to optimize PV performance. ZnO seed layers were deposited using spin coating at 3,000 rpm for 30 s onto indium tin oxide (ITO-coated polyethersulphone (PES substrates. The ZnO NRs were grown using an aqueous solution method at a low temperature (90°C. The optimized device with ZnO NRs exhibited a threefold increase in PV performance compared with that of a device consisting of a ZnO seed layer without ZnO NRs. Flexible IOSCs fabricated using ZnO NRs with improved PV performance may pave the way for the development of PV devices with larger interface areas for effective exciton dissociation and continuous carrier transport paths.

  14. Heat Transfer Analysis for Stationary Boundary Layer Slip Flow of a Power-Law Fluid in a Darcy Porous Medium with Plate Suction/Injection.

    Science.gov (United States)

    Aziz, Asim; Ali, Yasir; Aziz, Taha; Siddique, J I

    2015-01-01

    In this paper, we investigate the slip effects on the boundary layer flow and heat transfer characteristics of a power-law fluid past a porous flat plate embedded in the Darcy type porous medium. The nonlinear coupled system of partial differential equations governing the flow and heat transfer of a power-law fluid is transformed into a system of nonlinear coupled ordinary differential equations by applying a suitable similarity transformation. The resulting system of ordinary differential equations is solved numerically using Matlab bvp4c solver. Numerical results are presented in the form of graphs and the effects of the power-law index, velocity and thermal slip parameters, permeability parameter, suction/injection parameter on the velocity and temperature profiles are examined.

  15. DFT study of anthocyanidin and anthocyanin pigments for Dye-Sensitized Solar Cells: Electron injecting from the excited states and adsorption onto TiO2 (anatase) surface

    Science.gov (United States)

    Marcano, Emildo

    2017-06-01

    We explored, the absorption spectra, excited states and electronic injection parameters of anthocyanidin and anthocyanin pigments using the level of theory (TD)CAM-B3LYP/6-31+G(d,p). For the most isolated dyes, the distribution pattern of HOMO and LUMO spreads over the whole molecules, which lead an efficient electronic delocalization. The calculated light harvesting efficiencies (LHEs) are all near unity. Methoxy group in peonidin molecule lead the largest oscillator strength and LHE. The presence of water lead a higher spontaneous electronic inject process, with ΔGinject average of -1.14 eV. The ΔGinject order is peonidin anthocyanin-(TiO2)30 complex was calculated to be from 17 to 24 eV, indicating both, the strong interactions between the dyes and the anatase (TiO2) surface and stronger electronic coupling strengths of the anthocyanin-(TiO2)30 complex, which corresponded to higher observed η. The HOMO and LUMO shape showed the electrons delocalized predominantly on the anthocyanin structure while the LUMO + 1 shape is localized into the (TiO2)30 surface. Therefore, we expected a electronic injection from HOMO to LUMO + 1 in the anthocyanin-(TiO2)30 adsorption complex, after the light absorption.

  16. Layered composites of PEDOT/PSS/nanoparticles and PEDOT/PSS/phthalocyanines as electron mediators for sensors and biosensors.

    Science.gov (United States)

    García-Hernández, Celia; García-Cabezón, Cristina; Martín-Pedrosa, Fernando; De Saja, José Antonio; Rodríguez-Méndez, María Luz

    2016-01-01

    The sensing properties of electrodes chemically modified with PEDOT/PSS towards catechol and hydroquinone sensing have been successfully improved by combining layers of PEDOT/PSS with layers of a secondary electrocatalytic material such as gold nanoparticles (PEDOT/PSS/AuNPs), copper phthalocyanine (PEDOT/PSS/CuPc) or lutetium bisphthalocyanine (PEDOT/PSS/LuPc 2 ). Layered composites exhibit synergistic effects that strongly enhance the electrocatalytic activity as indicated by the increase in intensity and the shift of the redox peaks to lower potentials. A remarkable improvement has been achieved using PEDOT/PSS/LuPc 2 , which exhibits excellent electrocatalytic activity towards the oxidation of catechol. The kinetic studies demonstrated diffusion-controlled processes at the electrode surfaces. The kinetic parameters such as Tafel slopes and charge transfer coefficient (α) confirm the improved electrocatalytic activity of the layered electron mediators. The peak currents increased linearly with concentration of catechol and hydroquinone over the range of 1.5 × 10 -4 to 4.0 × 10 -6 mol·L -1 with a limit of detection on the scale of μmol·L -1 . The layered composite hybrid systems were also found to be excellent electron mediators in biosensors containing tyrosinase and laccase, and they combine the recognition and biocatalytic properties of biomolecules with the unique catalytic features of composite materials. The observed increase in the intensity of the responses allowed detection limits of 1 × 10 -7 mol·L -1 to be attained.

  17. Characterization of light element impurities in ultrathin silicon-on-insulator layers by luminescence activation using electron irradiation

    International Nuclear Information System (INIS)

    Nakagawa-Toyota, Satoko; Tajima, Michio; Hirose, Kazuyuki; Ohshima, Takeshi; Itoh, Hisayoshi

    2009-01-01

    We analyzed light element impurities in ultrathin top Si layers of silicon-on-insulator (SOI) wafers by luminescence activation using electron irradiation. Photoluminescence (PL) analysis under ultraviolet (UV) light excitation was performed on various commercial SOI wafers after the irradiation. We detected the C-line related to a complex of interstitial carbon and oxygen impurities and the G-line related to a complex of interstitial and substitutional carbon impurities in the top Si layer with a thickness down to 62 nm after electron irradiation. We showed that there were differences in the impurity concentration depending on the wafer fabrication methods and also that there were variations in these concentrations in the respective wafers. Xenon ion implantation was used to activate top Si layers selectively so that we could confirm that the PL signal under the UV light excitation comes not from substrates but from top Si layers. The present method is a very promising tool to evaluate the light element impurities in top Si layers. (author)

  18. Low-Temperature Modification of ZnO Nanoparticles Film for Electron-Transport Layers in Perovskite Solar Cells.

    Science.gov (United States)

    Han, Gill Sang; Shim, Hyun-Woo; Lee, Seongha; Duff, Matthew L; Lee, Jung-Kun

    2017-06-09

    An electron-transport layer (ETL) that selectively collects photogenerated electrons is an important constituent of halide perovskite solar cells (PSCs). Although TiO 2 films are widely used as ETL of PSCs, the processing of TiO 2 films with high electron mobility requires high-temperature annealing and TiO 2 dissociates the perovskite layer through a photocatalytic reaction. Here, we report an effective surface-modification method of a room-temperature processed ZnO nanoparticles (NPs) layer as an alternative to the TiO 2 ETL. A combination of simple UV exposure and nitric acid treatment effectively removes the hydroxyl group and passivates surface defects in ZnO NPs. The surface modification of ZnO NPs increases the power conversion efficiency (PCE) of PSCs to 14 % and decreases the aging of PSCs under light soaking. These results suggest that the surface-modified ZnO film can be a good ETL of PSCs and provide a path toward low-temperature processing of efficient and stable PSCs that are compatible with flexible electronics. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Bi-layer structure of counterstreaming energetic electron fluxes: a diagnostic tool of the acceleration mechanism in the Earth's magnetotail

    Directory of Open Access Journals (Sweden)

    D. V. Sarafopoulos

    2010-02-01

    Full Text Available For the first time we identify a bi-layer structure of energetic electron fluxes in the Earth's magnetotail and establish (using datasets mainly obtained by the Geotail Energetic Particles and Ion Composition (EPIC/ICS instrument that it actually provides strong evidence for a purely spatial structure. Each bi-layer event is composed of two distinct layers with counterstreaming energetic electron fluxes, parallel and antiparallel to the local ambient magnetic field lines; in particular, the tailward directed fluxes always occur in a region adjacent to the lobes. Adopting the X-line as a standard reconnection model, we determine the occurrence of bi-layer events relatively to the neutral point, in the substorm frame; four (out of the shown seven events are observed earthward and three tailward, a result implying that four events probably occurred with the substorm's local recovery phase. We discuss the bi-layer events in terms of the X-line model; they add more constraints for any candidate electron acceleration mechanism. It should be stressed that until this time, none proposed electron acceleration mechanism has discussed or predicted these layered structures with all their properties. Then we discuss the bi-layer events in terms of the much promising "akis model", as introduced by Sarafopoulos (2008. The akis magnetic field topology is embedded in a thinned plasma sheet and is potentially causing charge separation. We assume that as the Rc curvature radius of the magnetic field line tends to become equal to the ion gyroradius rg, then the ions become non-adiabatic. At the limit Rc=rg the demagnetization process is also under way and the frozen-in magnetic field condition is violated by strong wave turbulence; hence, the ion particles in this geometry are stochastically scattered. In addition, ion diffusion probably takes place across the magnetic field, since an intense pressure gradient is directed earthward; hence, ions are ejected tailward

  20. Evolution of electron states at a narrow-gap semiconductor surface in an accumulation-layer formation process

    OpenAIRE

    ABE, Shuma; INAOKA, Takeshi; HASEGAWA, Masayuki

    2002-01-01

    Adsorption on a doped semiconductor surface often induces a gradual formation of a carrier-accumulation layer at the surface. Taking full account of a nonparabolic (NP) conduction-band dispersion of a narrow-gap semiconductor, such as InAs and InSb, we investigate the evolution of electron states at the surface in an accumulation-layer formation process. The NP conduction band is incorporated into a local-density-functional formalism. We compare the calculated results for the NP dispersion wi...

  1. Liquid Water- and Heat-Resistant Hybrid Perovskite Photovoltaics via an Inverted ALD Oxide Electron Extraction Layer Design.

    Science.gov (United States)

    Kim, In Soo; Cao, Duyen H; Buchholz, D Bruce; Emery, Jonathan D; Farha, Omar K; Hupp, Joseph T; Kanatzidis, Mercouri G; Martinson, Alex B F

    2016-12-14

    Despite rapid advances in conversion efficiency (>22%), the environmental stability of perovskite solar cells remains a substantial barrier to commercialization. Here, we show a significant improvement in the stability of inverted perovskite solar cells against liquid water and high operating temperature (100 °C) by integrating an ultrathin amorphous oxide electron extraction layer via atomic layer deposition (ALD). These unencapsulated inverted devices exhibit a stable operation over at least 10 h when subjected to high thermal stress (100 °C) in ambient environments, as well as upon direct contact with a droplet of water without further encapsulation.

  2. Improving the performance of AlGaN-based deep-ultraviolet light-emitting diodes using electron blocking layer with a heart-shaped graded Al composition

    Science.gov (United States)

    Kwon, M. R.; Park, T. H.; Lee, T. H.; Lee, B. R.; Kim, T. G.

    2018-04-01

    We propose a design for highly efficient AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) using a heart-shaped graded Al composition electron-blocking layer (EBL). This novel structure reduced downward band bending at the interface between the last quantum barrier and the EBL and flattened the electrostatic field in the interlayer between the barriers of the multi-quantum barrier EBL. Consequently, electron leakage was significantly suppressed and hole injection efficiency was found to have improved. The parameter values of simulation were extracted from the experimental data of the reference DUV LEDs. Using the SimuLED, we compared the electrical and optical properties of three structures with different Al compositions in the active region and the EBL. The internal quantum efficiency of the proposed structure was shown to exceed those of the reference DUV LEDs by a factor of 1.9. Additionally, the output power at 20 mA was found to increase by a factor of 2.1.

  3. EFFECT OF VARIABLE VISCOSITY AND SUCTION/INJECTION ON THERMAL BOUNDARY LAYER OF A NON-NEWTONIAN POWER-LAW FLUIDS PAST A POWER-LAW STRETCHED SURFACE

    Directory of Open Access Journals (Sweden)

    Rania Fathy

    2010-01-01

    Full Text Available The analysis of laminar boundary layer flow and heat transfer of non-Newtonian fluids over a continuous stretched surface with suction or injection has been presented.The velocity and temperature of the sheet were assumed to vary in a power-law form, that is u = U0xm, and Tw(x = T+ Cxb. The viscosity of the fluid is assumed to be inverse linear function of temperature. The resulting governing boundary-layer equations are highly non-linear and coupled form of partial differential equations and they have been solved numerically by using the Runge-Kutta method and Shooting technique. Velocity and temperature distributions as well as the Nusselt number where studied for two thermal boundary conditions: uniform surface temperature (b = 0 and cooled surface temperature (b = -1, for different parameters: variable viscosity parameter qr, temperature exponent b, blowing parameter d and Prandtl number. The obtained results show that the flow and heat transfer characteristics are significantly influenced by these parameters.

  4. High-resolution electron microscopy study of Ni81Fe19 film with Co33Cr67 buffer layer

    International Nuclear Information System (INIS)

    Xu, Q.Y.; Wang, Z.M.; Shen, F.; Du, Y.W.; Zhang, Z.

    2003-01-01

    The anisotropic magnetoresistance (AMR) in permalloy Ni 81 Fe 19 film deposited on a 1.2 nm Co 33 Cr 67 buffer layer was significantly enhanced. The high-resolution electron microscopy was used to study the microstructure of Ni 81 Fe 19 film with and without Co 33 Cr 67 buffer layer. It was found that Co 33 Cr 67 buffer layer can induce good (1 1 1) texture, while without Co 33 Cr 67 buffer layer, Ni 81 Fe 19 film show randomly oriented grain structure. The Δρ/ρ enhancement is attributed to the decrease in the resistivity ρ of the Ni 81 Fe 19 film due to the formation of the large (1 1 1) textured grains in Ni 81 Fe 19 film with Co 33 Cr 67 buffer layer. However, the surface roughness of substrate may limit the (1 1 1) textured grain size and induce additional grain boundaries in Ni 81 Fe 19 film with Co 33 Cr 67 buffer layer, limit the enhancement of the AMR effect

  5. Effect of various chemical agents used in gingival retraction systems on smear layer: Scanning electron microscope study

    Directory of Open Access Journals (Sweden)

    Krishna Shivraj Lahoti

    2016-01-01

    Full Text Available Background: Chemical agents used for gingival retraction affects the smear layer. Aim: To determine the effect of three different chemical agents used for gingival retraction systems on smear layer. Materials and Methods: Four human premolars were prepared using air-rotor with air-water spray to receive full crown restoration. Three of them were treated with 21.3% aluminum chloride for 10 min, 0.05% oxymetazoline hydrochloride for 10 min, and expasyl for 2 min, respectively. One sample was left untreated. Then, the tooth specimens were rinsed with tap water to remove any residue of test materials. All the samples (treated and untreated were processed by scanning electron microscope (SEM. Processed samples were examined under SEM at ×2400 to evaluate the effect of chemical agents on smear layer. Results: SEM examination revealed that 0.05% oxymetazoline hydrochloride for 10 min produced no alteration to smear layer followed by minimum alteration by expasyl for 2 min and complete removal of smear layer with etching of dentin with 21.3% aluminum chloride for 10 min. Conclusion: 0.05% oxymetazoline hydrochloride and expasyl are kind to smear layer.

  6. p-wave triggered superconductivity in single-layer graphene on an electron-doped oxide superconductor.

    Science.gov (United States)

    Di Bernardo, A; Millo, O; Barbone, M; Alpern, H; Kalcheim, Y; Sassi, U; Ott, A K; De Fazio, D; Yoon, D; Amado, M; Ferrari, A C; Linder, J; Robinson, J W A

    2017-01-19

    Electron pairing in the vast majority of superconductors follows the Bardeen-Cooper-Schrieffer theory of superconductivity, which describes the condensation of electrons into pairs with antiparallel spins in a singlet state with an s-wave symmetry. Unconventional superconductivity was predicted in single-layer graphene (SLG), with the electrons pairing with a p-wave or chiral d-wave symmetry, depending on the position of the Fermi energy with respect to the Dirac point. By placing SLG on an electron-doped (non-chiral) d-wave superconductor and performing local scanning tunnelling microscopy and spectroscopy, here we show evidence for a p-wave triggered superconducting density of states in SLG. The realization of unconventional superconductivity in SLG offers an exciting new route for the development of p-wave superconductivity using two-dimensional materials with transition temperatures above 4.2 K.

  7. Phase-coherent electron transport in (Zn, Al)Ox thin films grown by atomic layer deposition

    Science.gov (United States)

    Saha, D.; Misra, P.; Ajimsha, R. S.; Joshi, M. P.; Kukreja, L. M.

    2014-11-01

    A clear signature of disorder induced quantum-interference phenomena leading to phase-coherent electron transport was observed in (Zn, Al)Ox thin films grown by atomic layer deposition. The degree of static-disorder was tuned by varying the Al concentration through periodic incorporation of Al2O3 sub-monolayer in ZnO. All the films showed small negative magnetoresistance due to magnetic field suppressed weak-localization effect. The temperature dependence of phase-coherence length ( l φ ∝ T - 3 / 4 ), as extracted from the magnetoresistance measurements, indicated electron-electron scattering as the dominant dephasing mechanism. The persistence of quantum-interference at relatively higher temperatures up to 200 K is promising for the realization of ZnO based phase-coherent electron transport devices.

  8. Electron microscopy analyses and electrical properties of the layered Bi{sub 2}WO{sub 6} phase

    Energy Technology Data Exchange (ETDEWEB)

    Taoufyq, A. [Institut Matériaux Microélectronique et Nanosciences de Provence, IM2NP, UMR CNRS 7334, Université du Sud Toulon-Var, BP 20132, 83957, La Garde Cedex (France); Laboratoire Matériaux et Environnement LME, Faculté des Sciences, Université Ibn Zohr, BP 8106, Cité Dakhla, Agadir, Maroc (Morocco); Département d‘Études des Réacteurs, Laboratoire Dosimétrie Capteurs Instrumentation, CEA Cadarache (France); Société CESIGMA—Signals and Systems, 1576 Chemin de La Planquette, F 83 130 LA GARDE (France); Ait Ahsaine, H. [Laboratoire Matériaux et Environnement LME, Faculté des Sciences, Université Ibn Zohr, BP 8106, Cité Dakhla, Agadir, Maroc (Morocco); Patout, L. [Institut Matériaux Microélectronique et Nanosciences de Provence, IM2NP, UMR CNRS 7334, Université du Sud Toulon-Var, BP 20132, 83957, La Garde Cedex (France); Benlhachemi, A.; Ezahri, M. [Laboratoire Matériaux et Environnement LME, Faculté des Sciences, Université Ibn Zohr, BP 8106, Cité Dakhla, Agadir, Maroc (Morocco); and others

    2013-07-15

    The bismuth tungstate Bi{sub 2}WO{sub 6} was synthesized using a classical coprecipitation method followed by a calcination process at different temperatures. The samples were characterized by X-ray diffraction, simultaneous thermogravimetry and differential thermal analysis (TGA/DTA), scanning and transmission electron microscopy (SEM, TEM) analyses. The Rietveld analysis and electron diffraction clearly confirmed the Pca2{sub 1} non centrosymmetric space group previously proposed for this phase. The layers Bi{sub 2}O{sub 2}{sup 2+} and WO{sub 4}{sup 2−} have been directly evidenced from the HRTEM images. The electrical properties of Bi{sub 2}WO{sub 6} compacted pellets systems were determined from electrical impedance spectrometry (EIS) and direct current (DC) analyses, under air and argon, between 350 and 700 °C. The direct current analyses showed that the conduction observed from EIS analyses was mainly ionic in this temperature range, with a small electronic contribution. Electrical change above the transition temperature of 660 °C is observed under air and argon atmospheres. The strong conductivity increase observed under argon is interpreted in terms of formation of additional oxygen vacancies coupled with electron conduction. - Graphical abstract: High resolution transmission electron microscopy: inverse fast Fourier transform giving the layered structure of the Bi{sub 2}WO{sub 6} phase, with a representation of the cell dimensions (b and c vectors). The Bi{sub 2}O{sub 2}{sup 2+} and WO{sub 4}{sup 2−} sandwiches are visible in the IFFT image. - Highlights: • Using transmission electron microscopy, we visualize the layered structure of Bi{sub 2}WO{sub 6}. • Electrical analyses under argon gas show some increase in conductivity. • The phase transition at 660 °C is evidenced from electrical modification.

  9. New real space correlated-basis-functions approach for the electron correlations of the semiconductor inversion layer

    International Nuclear Information System (INIS)

    Feng Weiguo; Wang Hongwei; Wu Xiang

    1989-12-01

    Based on the real space Correlated-Basis-Functions theory and the collective oscillation behaviour of the electron gas with effective Coulomb interaction, the many body wave function is obtained for the quasi-two-dimensional electron system in the semiconductor inversion layer. The pair-correlation function and the correlation energy of the system have been calculated by the integro-differential method in this paper. The comparison with the other previous theoretical results is also made. The new theoretical approach and its numerical results show that the pair-correlation functions are definitely positive and satisfy the normalization condition. (author). 10 refs, 2 figs

  10. Role of the electron blocking layer in the graded-index separate confinement heterostructure nitride laser diodes

    Science.gov (United States)

    Bojarska, Agata; Goss, Jakub; Stanczyk, Szymon; Makarowa, Irina; Schiavon, Dario; Czernecki, Robert; Suski, Tadeusz; Perlin, Piotr

    2018-04-01

    In this work, we investigate the role of the electron blocking layer (EBL) in laser diodes based on a graded index separate confinement heterostructure. We compare two sets of devices with very different EBL aluminum composition (3% and 12%) and design (graded and superlattice). The results of electro-optical characterization of these laser diodes reveal surprisingly modest role of electron blocking layer composition in determination of the threshold current and the differential efficiency values. However, EBL structure influences the operating voltage, which is decreased for devices with lower EBL and superlattice EBL. We observe also the differences in the thermal stability of devices - characteristic temperature is lower for lasers with 3% Al in EBL.

  11. Enhanced efficiency of organic solar cells by using ZnO as an electron-transport layer

    Science.gov (United States)

    Ullah, Irfan; Shah, Said Karim; Wali, Sartaj; Hayat, Khizar; Khattak, Shaukat Ali; Khan, Aurangzeb

    2017-12-01

    This paper reports the use of ZnO, processed by sol-gel, as an efficient electron-transport layer for inverted organic photovoltaic cells. The device with incorporated ZnO interlayer, annealed at 100 °C, between transparent electrode and blend film plays an effective role in enhancing photovoltaic properties: the short-circuit current density (J sc) doubles while open-circuit voltage (V oc) and fill factor increase by 0.12 V and 10 %, respectively. Power conversion efficiency (PCE) of solar cell increases, approximately, three times. The improvement in the PCE is attributed to the presence of ZnO which, being an electron-facilitating layer, provides an energy step for charge collection at electrodes.

  12. Reduced workfunction intermetallic seed layers allow growth of porous n-GaN and low resistivity, ohmic electron transport.

    Science.gov (United States)

    Bilousov, Oleksandr V; Carvajal, Joan J; Drouin, Dominique; Mateos, Xavier; Díaz, Francesc; Aguiló, Magdalena; O'Dwyer, Colm

    2012-12-01

    Porous GaN crystals have been successfully grown and electrically contacted simultaneously on Pt- and Au-coated silicon substrates as porous crystals and as porous layers. By the direct reaction of metallic Ga and NH(3) gas through chemical vapor deposition, intermetallic metal-Ga alloys form at the GaN-metal interface, allowing vapor-solid-solid seeding and subsequent growth of porous GaN. Current-voltage and capacitance-voltage measurements confirm that the intermetallic seed layers prevent interface oxidation and give a high-quality reduced workfunction contact that allows exceptionally low contact resistivities. Additionally, the simultaneous formation of a lower workfunction intermetallic permits ohmic electron transport to n-type GaN grown using high workfunction metals that best catalyze the formation of porous GaN layers and may be employed to seed and ohmically contact a range of III-N compounds and alloys for broadband absorption and emission.

  13. Small angle X-ray scattering and transmission electron microscopy study of the Lactobacillus brevis S-layer protein

    Energy Technology Data Exchange (ETDEWEB)

    Jaeaeskelaeinen, Pentti [Department of Biomedical Engineering and Computational Science, PO Box 2200, FI-02015 Aalto University School of Science and Technology (Finland); Engelhardt, Peter [Haartman Institute, Department of Pathology, PO Box 21, FIN-00014 University of Helsinki (Finland); Hynoenen, Ulla; Palva, Airi [Department of Basic Veterinary Sciences, Division of Microbiology, FIN-00014 University of Helsinki (Finland); Torkkeli, Mika; Serimaa, Ritva, E-mail: ritva.serimaa@helsinki.f [Department of Physics, POB 64, 00014 University of Helsinki (Finland)

    2010-10-01

    The structure of self-assembly domain containing recombinant truncation mutants of Lactobacillus brevis surface layer protein SlpA in aqueous solution was studied using small-angle X-ray scattering and transmission electron microscopy. The proteins were found out to interact with each other forming stable globular oligomers of about 10 monomers. The maximum diameter of the oligomers varied between 75 A and 435 A.

  14. Small angle X-ray scattering and transmission electron microscopy study of the Lactobacillus brevis S-layer protein

    Science.gov (United States)

    Jääskeläinen, Pentti; Engelhardt, Peter; Hynönen, Ulla; Torkkeli, Mika; Palva, Airi; Serimaa, Ritva

    2010-10-01

    The structure of self-assembly domain containing recombinant truncation mutants of Lactobacillus brevis surface layer protein SlpA in aqueous solution was studied using small-angle X-ray scattering and transmission electron microscopy. The proteins were found out to interact with each other forming stable globular oligomers of about 10 monomers. The maximum diameter of the oligomers varied between 75 Å and 435 Å.

  15. Role of electron back action on photons in hybridizing double-layer graphene plasmons with localized photons

    Science.gov (United States)

    Huang, Danhong; Iurov, Andrii; Gumbs, Godfrey

    2018-05-01

    In this paper, we deal with the electromagnetic coupling between an incident surface-plasmon-polariton wave and relativistic electrons in two graphene layers. Our previous investigation was limited to single-layer graphene (Iurov et al 2017 Phys. Rev. B 96 081408). However, the present work, is both an expanded and extended version of this previous Phys. Rev. B paper after having included very detailed theoretical formalisms and extensive comparisons of results from either one or two graphene layers embedded in a dielectric medium. The additional retarded Coulomb interaction between two graphene layers will compete with the coupling between the single graphene layer and the surface of a conductor. Consequently, some distinctive features, such as triply-hybridized absorption peaks and a new acoustic-like graphene plasmon mode within the anticrossing region, have been found for the double-layer graphene system. Physically, our theory is self-consistent, in comparison with a commonly adopted perturbative theory, for studying hybrid light-plasmon modes and the electron back action on photons. Instead of usual radiation or grating-deflection field coupling, a surface-plasmon-polariton localized field coupling is introduced with completely different dispersion relations for radiative (small wave numbers) and evanescent (large wave numbers) field modes. Technically, the exactly calculated effective scattering matrix for this theory can be employed to construct an effective-medium theory in order to improve the accuracy of the well-known finite-difference time-domain method for solving Maxwell’s equations numerically. Practically, the predicted triply-hybridized absorption peaks can excite polaritons only, giving rise to a possible polariton-condensation based laser.

  16. Phase and structural states in the NiTi-based alloy surface layer formed by electron-ion-plasma methods using tantalum

    Energy Technology Data Exchange (ETDEWEB)

    Neiman, Aleksei A., E-mail: nasa@ispms.tsc.ru; Lotkov, Aleksandr I.; Gudimova, Ekaterina Y. [Institute of Strength Physics and Materials Science SB RAS, Tomsk, 634055 (Russian Federation); Meisner, Ludmila L., E-mail: meisner2l@yahoo.com; Semin, Viktor O. [Institute of Strength Physics and Materials Science SB RAS, Tomsk, 634055 (Russian Federation); National Research Tomsk State University, Tomsk, 634050 (Russian Federation)

    2015-10-27

    The paper reports on a study of regularities of formation gradient nano-, submicron and microstructural conditions in the surface layers of the samples after pulsed electron-beam melting of tantalum coating on the substrate NiTi alloy. Experimentally revealed the presence of submicron columnar structure in the upper layers of the tantalum coating. After irradiation modified NiTi surface takes on a layered structure in which each layer differs in phase composition and structural phase state.

  17. The effects of electron and hole transport layer with the electrode work function on perovskite solar cells

    Science.gov (United States)

    Deng, Quanrong; Li, Yiqi; Chen, Lian; Wang, Shenggao; Wang, Geming; Sheng, Yonglong; Shao, Guosheng

    2016-09-01

    The effects of electron and hole transport layer with the electrode work function on perovskite solar cells with the interface defects were simulated by using analysis of microelectronic and photonic structures-one-dimensional (AMPS-1D) software. The simulation results suggest that TiO2 electron transport layer provides best device performance with conversion efficiency of 25.9% compared with ZnO and CdS. The threshold value of back electrode work function for Spiro-OMeTAD, NiO, CuI and Cu2O hole transport layer are calculated to be 4.9, 4.8, 4.7 and 4.9 eV, respectively, to reach the highest conversion efficiency. The mechanisms of device physics with various electron and hole transport materials are discussed in details. The device performance deteriorates gradually as the increased density of interface defects located at ETM/absorber or absorber/HTM. This research results can provide helpful guidance for materials and metal electrode choice for perovskite solar cells.

  18. The influence of hybrid alumina/titania materials as electron transmission layer in planar high-performance perovskite solar cells

    Science.gov (United States)

    Yuan, Songyang; Xia, Chao; Zhang, Chongzhen; Song, Weidong; Qi, Mingyue; Wang, Rupeng; Zhao, Liangliang; Li, Shuti

    2017-11-01

    As one of main layers in hybrid organic-inorganic perovskite solar cells (PSCs), electron transport materials (ETM) play an important role in getting high photoelectric conversion efficiency (PCE). Here, we investigate Al2O3/TiO2 hybrid materials as electron transmission layer in planar perovskite solar cells. The hybrid Al2O3/TiO2 material is proved to induce a better crystal quality of CH3NH3PbCl3- x I x perovskite layer as confirmed by X-ray diffractometer (XRD). The new-formed compact rough surface of ETM is responsible for the better excited electron transmission and light absorption, thus resulting in the improvement of short-circuit current ( J sc). Meanwhile, the embedded Al2O3 plays a key role in shifting the conduction band edge of ETM, thereby leading to the improvement of photo-voltage. The optimal value is obtained with the test of sequential changing Al2O3/TiO2 concentration ratio. Compared to the device with pure TiO2 as ETM, the devices assembled with Al2O3/TiO2 hybrid ETM showed improvement in J sc (from 13.65 to 18.71 mA/cm2) as well as in V oc (from 0.95 to 1.00 V), which brings about 27.6% enhancement in PCE based on the multifunctional hybrid TiO2/ Al2O3 ETM.

  19. Graphene–cyclodextrin–cytochrome c layered assembly with improved electron transfer rate and high supramolecular recognition capability

    Energy Technology Data Exchange (ETDEWEB)

    Gong, Cheng-Bin; Guo, Cong-Cong; Jiang, Dan; Tang, Qian, E-mail: qiantang@swu.edu.cn; Liu, Chang-Hua; Ma, Xue-Bing

    2014-06-01

    This study aimed to develop a new graphene-based layered assembly, named graphene–cyclodextrin–cytochrome c with improved electron transfer rate. This assembly has combined high conductivity of graphene nanosheets (GNs), selectively binding properties and electronegativity of cyclodextrins (CDs), as well as electropositivity of cytochrome c (Cyt c). This assembly can also mimic the confined environments of the intermembrane space of mitochondria. A β-cyclodextrin (β-CD) functionalized GN (GN–CD) assembly was initially prepared by a simple wet-chemical strategy, i.e., in situ thermal reduction of graphene oxide with hydrazine hydrate in the presence of β-CD. Cyt c was then intercalated to the GN–CD assembly to form a layered self-assembled structure, GN–CD–Cyt c, through electrostatic interaction. Compared with GNs and GN–CD, GN–CD–Cyt c assembly displayed improved electron transfer rate and high supramolecular recognition capability toward six probe molecules. - Highlights: • A new tertiary layered assembly named GN–CD–Cyt c was prepared. • Compared with GNs and GN–CD, GN–CD–Cyt c shows improved electron transfer rate. • GN–CD–Cyt c displays high supramolecular recognition capability.

  20. The Effect of Post-Baking Temperature and Thickness of ZnO Electron Transport Layers for Efficient Planar Heterojunction Organometal-Trihalide Perovskite Solar Cells

    OpenAIRE

    Kun-Mu Lee; Chuan-Jung Lin; Yin-Hsuan Chang; Ting-Han Lin; Vembu Suryanarayanan; Ming-Chung Wu

    2017-01-01

    Solution-processed zinc oxide (ZnO)-based planar heterojunction perovskite photovoltaic device is reported in this study. The photovoltaic device benefits from the ZnO film as a high-conductivity and high-transparent electron transport layer. The optimal electron transport layer thickness and post-baking temperature for ZnO are systematically studied by scanning electron microscopy, photoluminescence and time-resolved photoluminescence spectroscopy, and X-ray diffraction. Optimized perovskite...

  1. Engineering the mechanical properties of ultrabarrier films grown by atomic layer deposition for the encapsulation of printed electronics

    Energy Technology Data Exchange (ETDEWEB)

    Bulusu, A.; Singh, A.; Kim, H. [Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Wang, C. Y.; Dindar, A.; Fuentes-Hernandez, C.; Kippelen, B. [School of Electrical and Computer Engineering, Georgia Institute of Technology, and Center for Organic Photonics and Electronics, Atlanta, Georgia 30332 (United States); Cullen, D. [Oak Ridge National Laboratory, P.O. Box 2008 MS-6064, Oak Ridge, Tennessee 37831 (United States); Graham, S., E-mail: sgraham@gatech.edu [Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Oak Ridge National Laboratory, P.O. Box 2008 MS-6064, Oak Ridge, Tennessee 37831 (United States)

    2015-08-28

    Direct deposition of barrier films by atomic layer deposition (ALD) onto printed electronics presents a promising method for packaging devices. Films made by ALD have been shown to possess desired ultrabarrier properties, but face challenges when directly grown onto surfaces with varying composition and topography. Challenges include differing nucleation and growth rates across the surface, stress concentrations from topography and coefficient of thermal expansion mismatch, elastic constant mismatch, and particle contamination that may impact the performance of the ALD barrier. In such cases, a polymer smoothing layer may be needed to coat the surface prior to ALD barrier film deposition. We present the impact of architecture on the performance of aluminum oxide (Al{sub 2}O{sub 3})/hafnium oxide (HfO{sub 2}) ALD nanolaminate barrier films deposited on fluorinated polymer layer using an optical calcium (Ca) test under damp heat. It is found that with increasing polymer thickness, the barrier films with residual tensile stress are prone to cracking resulting in rapid failure of the Ca sensor at 50 °C/85% relative humidity. Inserting a SiN{sub x} layer with residual compressive stress between the polymer and ALD layers is found to prevent cracking over a range of polymer thicknesses with more than 95% of the Ca sensor remaining after 500 h of testing. These results suggest that controlling mechanical properties and film architecture play an important role in the performance of direct deposited ALD barriers.

  2. Effects of the buffer layer inserted between the transparent conductive oxide anode and the organic electron donor

    Energy Technology Data Exchange (ETDEWEB)

    Godoy, A.; Kouskoussa, B.; Benchouk, K.; Khelil, A. [Facultad Ciencias de la Salud, Universidad Diego Portales, Ejercito 141, Santiago de Chile (Chile); Cattin, L.; Soto, G.M. [Universite de Nantes, Nantes Atlantique Universites, Institut des Materiaux Jean Rouxel (IMN)-CNRS, Faculte des Sciences et Techniques, 2 rue de la Houssiniere, BP 92208, Nantes F-44000 (France); Toumi, L. [LPCM2E, Universite d' Oran Es-Senia, LPCM2E (Algeria); Diaz, F.R.; del Valle, M.A. [Laboratorio de Polimeros, Facultad de Quimica, Pontificia Universidad Catolica de Chile, Casilla 306, Correo 22, Santiago (Chile); Morsli, M.; Bernede, J.C. [Universite de Nantes, Nantes Atlantique Universites, LAMP, Faculte des Sciences et Techniques, 2 rue de la Houssiniere, BP 92208, Nantes F-44000 (France)

    2010-04-15

    In optoelectronic devices, the work function of the transparent conductive oxide, which is used as anode, does not match well the highest occupied molecular orbital of the organic material, which induces the formation of a barrier opposed to hole exchange at this interface. Therefore a thin buffer layer is often used to achieve good matching of the band structure at the interface. From experimental results it can be deduced that the main effects of the buffer layer consist in a better matching of the band structure at the interface anode/organic material and in a more homogeneous organic layer growth. We show that, whatever the nature of the buffer layer-metal, oxide, organic material - the classical Schottky-Mott model allows to anticipate, at least roughly, the behaviour of the contact, even if some dipole effect are often present. A good correlation between the ''metal/buffer layer'' work function and the barrier {phi}{sub b} for hole exchange at anode/organic electron donor interfaces is obtained, as expected by the model. (author)

  3. Physical processes in an electron current layer causing intense plasma heating and formation of x-lines

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Nagendra; Wells, B. E. [Electrical and Computer Engineering, University of Alabama, Huntsville, Alabama 35899 (United States); Khazanov, Igor [CSPAR, University of Alabama, Huntsville, Alabama 35899 (United States)

    2015-05-15

    We study the evolution of an electron current layer (ECL) through its several stages by means of three-dimensional particle-in-cell (PIC) simulations with ion to electron mass ratio M/m{sub e} = 400. An ECL evolves through the following stages: (i) Electrostatic (ES) current-driven instability (CDI) soon after its formation with half width w about 2 electron skin depth (d{sub e}), (ii) current disruption in the central part of the ECL by trapping of electrons and generation of anomalous resistivity, (iii) electron tearing instability (ETI) with significantly large growth rates in the lower end of the whistler frequency range, (iv) widening of the ECL and modulation of its width by the ETI, (v) gradual heating of electrons by the CDI-driven ES ion modes create the condition that the electrons become hotter than the ions, (vi) despite the reduced electron drift associated with the current disruption by the CDI, the enhanced electron temperature continues to favor a slow growth of the ion waves reaching nonlinear amplitudes, (vii) the nonlinear ion waves undergo modulation and collapse into localized density cavities containing spiky electric fields like in double layers (DLs), (viii) such spiky electric fields are very effective in further rapid heating of both electrons and ions. As predicted by the electron magnetohydrodynamic (EMHD) theories, the ETI growth rate maximizes at wave numbers in the range 0.4 < k{sub x}W < 0.8 where k{sub x} is the wave number parallel to the ECL magnetic field and w is the evolving half width of the ECL. The developing ETI generates in-plane currents that support out-of-plane magnetic fields around the emerging x-lines. The ETI and the spiky electrostatic structures are accompanied by fluctuations in the magnetic fields near and above the lower-hybrid (ion plasma) frequency, including the whistler frequency range. We compare our results with experimental results and satellite observation.

  4. Current status of AlInN layers lattice-matched to GaN for photonics and electronics

    International Nuclear Information System (INIS)

    Butte, R; Carlin, J-F; Feltin, E; Gonschorek, M; Nicolay, S; Christmann, G; Simeonov, D; Castiglia, A; Dorsaz, J; Buehlmann, H J; Christopoulos, S; Hoegersthal, G Baldassarri Hoeger von; Grundy, A J D; Mosca, M; Pinquier, C; Py, M A; Demangeot, F; Frandon, J; Lagoudakis, P G; Baumberg, J J; Grandjean, N

    2007-01-01

    We report on the current properties of Al 1-x In x N (x ∼ 0.18) layers lattice-matched (LM) to GaN and their specific use to realize nearly strain-free structures for photonic and electronic applications. Following a literature survey of the general properties of AlInN layers, structural and optical properties of thin state-of-the-art AlInN layers LM to GaN are described showing that despite improved structural properties these layers are still characterized by a typical background donor concentration of (1-5) x 10 18 cm -3 and a large Stokes shift (∼800 meV) between luminescence and absorption edge. The use of these AlInN layers LM to GaN is then exemplified through the properties of GaN/AlInN multiple quantum wells (QWs) suitable for near-infrared intersubband applications. A built-in electric field of 3.64 MV cm -1 solely due to spontaneous polarization is deduced from photoluminescence measurements carried out on strain-free single QW heterostructures, a value in good agreement with that deduced from theoretical calculation. Other potentialities regarding optoelectronics are demonstrated through the successful realization of crack-free highly reflective AlInN/GaN distributed Bragg reflectors (R > 99%) and high quality factor microcavities (Q > 2800) likely to be of high interest for short wavelength vertical light emitting devices and fundamental studies on the strong coupling regime between excitons and cavity photons. In this respect, room temperature (RT) lasing of a LM AlInN/GaN vertical cavity surface emitting laser under optical pumping is reported. A description of the selective lateral oxidation of AlInN layers for current confinement in nitride-based light emitting devices and the selective chemical etching of oxidized AlInN layers is also given. Finally, the characterization of LM AlInN/GaN heterojunctions will reveal the potential of such a system for the fabrication of high electron mobility transistors through the report of a high two

  5. Multiple electron injection dynamics in linearly-linked two dye co-sensitized nanocrystalline metal oxide electrodes for dye-sensitized solar cells.

    Science.gov (United States)

    Shen, Qing; Ogomi, Yuhei; Park, Byung-wook; Inoue, Takafumi; Pandey, Shyam S; Miyamoto, Akari; Fujita, Shinsuke; Katayama, Kenji; Toyoda, Taro; Hayase, Shuzi

    2012-04-07

    Understanding the electron transfer dynamics at the interface between dye sensitizer and semiconductor nanoparticle is very important for both a fundamental study and development of dye-sensitized solar cells (DSCs), which are a potential candidate for next generation solar cells. In this study, we have characterized the ultrafast photoexcited electron dynamics in a newly produced linearly-linked two dye co-sensitized solar cell using both a transient absorption (TA) and an improved transient grating (TG) technique, in which tin(IV) 2,11,20,29-tetra-tert-butyl-2,3-naphthalocyanine (NcSn) and cis-diisothiocyanato-bis(2,2'-bipyridyl-4,4'-dicarboxylato)ruthenium(II) bis(tetrabutylammonium) (N719) are molecularly and linearly linked and are bonded to the surface of a nanocrystalline tin dioxide (SnO(2)) electrode by a metal-O-metal linkage (i.e. SnO(2)-NcSn-N719). By comparing the TA and TG kinetics of NcSn, N719, and hybrid NcSn-N719 molecules adsorbed onto both of the SnO(2) and zirconium dioxide (ZrO(2)) nanocrystalline films, the forward and backward electron transfer dynamics in SnO(2)-NcSn-N719 were clarified. We found that there are two pathways for electron injection from the linearly-linked two dye molecules (NcSn-N719) to SnO(2). The first is a stepwise electron injection, in which photoexcited electrons first transfer from N719 to NcSn with a transfer time of 0.95 ps and then transfer from NcSn to the conduction band (CB) of SnO(2) with two timescales of 1.6 ps and 4.2 ps. The second is direct photoexcited electron transfer from N719 to the CB of SnO(2) with a timescale of 20-30 ps. On the other hand, back electron transfer from SnO(2) to NcSn is on a timescale of about 2 ns, which is about three orders of magnitude slower compared to the forward electron transfer from NcSn to SnO(2). The back electron transfer from NcSn to N719 is on a timescale of about 40 ps, which is about one order slower compared to the forward electron transfer from N719 to Nc

  6. Increased luminance of MEH-PPV and PFO based PLEDs by using salmon DNA as an electron blocking layer

    Energy Technology Data Exchange (ETDEWEB)

    Madhwal, Devinder, E-mail: devindermadhwal@gmail.co [Material Science Laboratory, Department of Electronic Science, University of Delhi South campus, Benito Juarez Road, New Delhi-110021 (India); Rait, S.S.; Verma, A.; Kumar, Amit; Bhatnagar, P.K.; Mathur, P.C. [Material Science Laboratory, Department of Electronic Science, University of Delhi South campus, Benito Juarez Road, New Delhi-110021 (India); Onoda, M. [Department of Electrical Engineering and Computer Science, University of Hyogo, Himeji (Japan)

    2010-02-15

    The effect of salmon DNA-CTMA as an electron blocking layer (EBL) has been examined on the performance of MEH-PPV and PFO-based light emitting diodes. Though the turn-on voltage increases with incorporation of EBL, a significant increase in luminance and luminous efficiency for both the devices is observed. The EBL improves the device performance by blocking electrons at the EBL-polymer interface, thereby increasing the recombination probability of electrons and holes. The luminance of the MEH-PPV based Bio-LED increases to 100 cd/m{sup 2} from 30 cd/m{sup 2} while a corresponding increase for the PFO based LED is to 160 cd/m{sup 2} from 80 cd/m{sup 2} with and without EBL, respectively.

  7. Generic roll-to-roll compatible method for insolubilizing and stabilizing conjugated active layers based on low energy electron irradiation

    DEFF Research Database (Denmark)

    Helgesen, Martin; Carlé, Jon Eggert; Helt-Hansen, Jakob

    2014-01-01

    Irradiation of organic multilayer films is demonstrated as a powerful method to improve several properties of polymer thin films and devices derived from them. The chemical cross‐linking that is the direct result of the irradiation with ∼100 keV electrons is fast and has a penetration power...... compatible with thin plastic foils of one to two hundreds of microns typical of devices explored in organic electronics. We demonstrate here that active layers and complete devices can be subjected to electron irradiation‐induced cross‐linking thus facilitating multilayer solvent processing and morphological...... the technique. We also demonstrate that polymer solar cells are exceptionally stable towards ionizing radiation and find that doses as high as 100 kGy can be used before any significant decrease in performance is observed. © 2014 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2014, 131, 40795....

  8. Early results of microwave transmission experiments through an overly dense rectangular plasma sheet with microparticle injection

    Science.gov (United States)

    Gillman, Eric D.; Amatucci, W. E.

    2014-06-01

    These experiments utilize a linear hollow cathode to create a dense, rectangular plasma sheet to simulate the plasma layer surrounding vehicles traveling at hypersonic velocities within the Earth's atmosphere. Injection of fine dielectric microparticles significantly reduces the electron density and therefore lowers the electron plasma frequency by binding a significant portion of the bulk free electrons to the relatively massive microparticles. Measurements show that microwave transmission through this previously overly dense, impenetrable plasma layer increases with the injection of alumina microparticles approximately 60 μm in diameter. This method of electron depletion is a potential means of mitigating the radio communications blackout experienced by hypersonic vehicles.

  9. Anomalous electron transport in metal/carbon multijunction devices by engineering of the carbon thickness and selecting metal layer

    Science.gov (United States)

    Dwivedi, Neeraj; Dhand, Chetna; Rawal, Ishpal; Kumar, Sushil; Malik, Hitendra K.; Lakshminarayanan, Rajamani

    2017-06-01

    A longstanding concern in the research of amorphous carbon films is their poor electrical conductivity at room temperature which constitutes a major barrier for the development of cost effective electronic and optoelectronic devices. Here, we propose metal/carbon hybrid multijunction devices as a promising facile way to overcome room temperature electron transport issues in amorphous carbon films. By the tuning of carbon thickness and swapping metal layers, we observe giant (upto ˜7 orders) reduction of electrical resistance in metal/carbon multijunction devices with respect to monolithic amorphous carbon device. We engineer the maximum current (electrical resistance) from about 10-7 to 10-3 A (˜107 to 103 Ω) in metal (Cu or Ti)/carbon hybrid multijunction devices with a total number of 10 junctions. The introduction of thin metal layers breaks the continuity of relatively higher resistance carbon layer as well as promotes the nanostructuring of carbon. These contribute to low electrical resistance of metal/carbon hybrid multijunction devices, with respect to monolithic carbon device, which is further reduced by decreasing the thickness of carbon layers. We also propose and discuss equivalent circuit model to explain electrical resistance in monolithic carbon and metal/carbon multijunction devices. Cu/carbon multijunction devices display relatively better electrical transport than Ti/carbon devices owing to low affinity of Cu with carbon that restricts carbide formation. We also observe that in metal/carbon multijunction devices, the transport mechanism changes from Poole-Frenkel/Schottky model to the hopping model with a decrease in carbon thickness. Our approach opens a new route to develop carbon-based inexpensive electronic and optoelectronic devices.

  10. Low-Cost and Green Fabrication of Polymer Electronic Devices by Push-Coating of the Polymer Active Layers.

    Science.gov (United States)

    Vohra, Varun; Mróz, Wojciech; Inaba, Shusei; Porzio, William; Giovanella, Umberto; Galeotti, Francesco

    2017-08-02

    Because of both its easy processability and compatibility with roll-to-roll processes, polymer electronics is considered to be the most promising technology for the future generation of low-cost electronic devices such as light-emitting diodes and solar cells. However, the state-of-the-art deposition technique for polymer electronics (spin-coating) generates a high volume of chlorinated solution wastes during the active layer fabrication. Here, we demonstrate that devices with similar or higher performances can be manufactured using the push-coating technique in which a poly(dimethylsiloxane) (PDMS) layer is simply laid over a very small amount of solution (less than 1μL/covered cm 2 ), which is then left for drying. Using mm thick PDMS provides a means to control the solvent diffusion kinetics (sorption/retention) and removes the necessity for additional applied pressure to generate the desired active layer thickness. Unlike spin-coating, push-coating is a slow drying process that induces a higher degree of crystallinity in the polymer thin film without the necessity for a post-annealing step. The polymer light-emitting diodes and solar cells prepared by push-coating exhibit slightly higher performances with respect to the reference spin-coated devices, whereas at the same time reduce the amounts of active layer materials and chlorinated solvents by 50 and 20 times, respectively. These increased performances can be correlated to the higher polymer crystallinities obtained without applying a post-annealing treatment. As push-coating is a roll-to-roll compatible method, the results presented here open the path to low-cost and eco-friendly fabrication of a wide range of emerging devices based on conjugated polymer materials.

  11. Layered composites of PEDOT/PSS/nanoparticles and PEDOT/PSS/phthalocyanines as electron mediators for sensors and biosensors

    Directory of Open Access Journals (Sweden)

    Celia García-Hernández

    2016-12-01

    Full Text Available The sensing properties of electrodes chemically modified with PEDOT/PSS towards catechol and hydroquinone sensing have been successfully improved by combining layers of PEDOT/PSS with layers of a secondary electrocatalytic material such as gold nanoparticles (PEDOT/PSS/AuNPs, copper phthalocyanine (PEDOT/PSS/CuPc or lutetium bisphthalocyanine (PEDOT/PSS/LuPc2. Layered composites exhibit synergistic effects that strongly enhance the electrocatalytic activity as indicated by the increase in intensity and the shift of the redox peaks to lower potentials. A remarkable improvement has been achieved using PEDOT/PSS/LuPc2, which exhibits excellent electrocatalytic activity towards the oxidation of catechol. The kinetic studies demonstrated diffusion-controlled processes at the electrode surfaces. The kinetic parameters such as Tafel slopes and charge transfer coefficient (α confirm the improved electrocatalytic activity of the layered electron mediators. The peak currents increased linearly with concentration of catechol and hydroquinone over the range of 1.5 × 10−4 to 4.0 × 10−6 mol·L−1 with a limit of detection on the scale of μmol·L−1. The layered composite hybrid systems were also found to be excellent electron mediators in biosensors containing tyrosinase and laccase, and they combine the recognition and biocatalytic properties of biomolecules with the unique catalytic features of composite materials. The observed increase in the intensity of the responses allowed detection limits of 1 × 10−7 mol·L−1 to be attained.

  12. Effect of Energy Alignment, Electron Mobility, and Film Morphology of Perylene Diimide Based Polymers as Electron Transport Layer on the Performance of Perovskite Solar Cells.

    Science.gov (United States)

    Guo, Qiang; Xu, Yingxue; Xiao, Bo; Zhang, Bing; Zhou, Erjun; Wang, Fuzhi; Bai, Yiming; Hayat, Tasawar; Alsaedi, Ahmed; Tan, Zhan'ao

    2017-03-29

    For organic-inorganic perovskite solar cells (PerSCs), the electron transport layer (ETL) plays a crucial role in efficient electron extraction and transport for high performance PerSCs. Fullerene and its derivatives are commonly used as ETL for p-i-n structured PerSCs. However, these spherical small molecules are easy to aggregate with high annealing temperature and thus induce morphology stability problems. N-type conjugated polymers are promising candidates to overcome these problems due to the tunable energy levels, controllable aggregation behaviors, and good film formation abilities. Herein, a series of perylene diimide (PDI) based polymers (PX-PDIs), which contain different copolymeried units (X), including vinylene (V), thiophene (T), selenophene (Se), dibenzosilole (DBS), and cyclopentadithiophene (CPDT), are introduced as ETL for p-i-n structured PerSCs. The effect of energy alignment, electron mobility, and film morphology of these ETLs on the photovoltaic performance of the PerSCs are fully investigated. Among the PX-PDIs, PV-PDI demonstrates the deeper LUMO energy level, the highly delocalized LUMO electron density, and a better planar structure, making it the best electron transport material for PerSCs. The planar heterojunction PerSC with PV-PDI as ETL achieves a power conversion efficiency (PCE) of 10.14%, among the best values for non-fullerene based PerSCs.

  13. Spin injection into silicon in three-terminal vertical and four-terminal lateral devices with Fe/Mg/MgO/Si tunnel junctions having an ultrathin Mg insertion layer

    Science.gov (United States)

    Sato, Shoichi; Nakane, Ryosho; Hada, Takato; Tanaka, Masaaki

    2017-12-01

    We demonstrate that the spin injection/extraction efficiency is enhanced by an ultrathin Mg insertion layer (⩽2 nm) in Fe /Mg /MgO /n+-Si tunnel junctions. In diode-type vertical three-terminal devices fabricated on a Si substrate, we observe the narrower three-terminal Hanle (N-3TH) signals indicating true spin injection into Si and estimate the spin polarization in Si to be 16% when the thickness of the Mg insertion layer is 1 nm, whereas no N-3TH signal is observed without the Mg insertion. This means that the spin injection/extraction efficiency is enhanced by suppressing the formation of a magnetically dead layer at the Fe/MgO interface. We also observe clear spin transport signals, such as nonlocal Hanle signals and spin-valve signals, in a lateral four-terminal device with the same Fe /Mg /MgO /n+-Si tunnel junctions fabricated on a Si-on-insulator substrate. It is found that both the intensity and linewidth of the spin signals are affected by the geometrical effects (device geometry and size). We have derived analytical functions taking into account the device structures, including channel thickness and electrode size, and estimated important parameters: spin lifetime and spin polarization. Our analytical functions explain the experimental results very well. Our study shows the importance of suppressing a magnetically dead layer and provides a unified understanding of spin injection/detection signals in different device geometries.

  14. A bio-enabled maximally mild layer-by-layer Kapton surface modification approach for the fabrication of all-inkjet-printed flexible electronic devices

    Science.gov (United States)

    Fang, Yunnan; Hester, Jimmy G. D.; Su, Wenjing; Chow, Justin H.; Sitaraman, Suresh K.; Tentzeris, Manos M.

    2016-12-01

    A bio-enabled, environmentally-friendly, and maximally mild layer-by-layer approach has been developed to surface modify inherently hydrophobic Kapton HN substrates to allow for great printability of both water- and organic solvent-based inks thus facilitating the full-inkjet-printing of flexible electronic devices. Different from the traditional Kapton surface modification approaches which are structure-compromising and use harsh conditions to target, and oxidize and/or remove part of, the surface polyimide of Kapton, the present Kapton surface modification approach targeted the surface electric charges borne by its additive particles, and was not only the first to utilize environmentally-friendly clinical biomolecules to build up a thin film of protamine-heparin complex on Kapton, but also the first to be conducted under minimally destructive and maximally mild conditions. Besides, for electrically charged ink particles, the present surface modification method can enhance the uniformity of the inkjet-printed films by reducing the “coffee ring effect”. As a proof-of-concept demonstration, reduced graphene oxide-based gas sensors, which were flexible, ultra-lightweight, and miniature-sized, were fully-inkjet-printed on surface modified Kapton HN films and tested for their sensitivity to dimethyl methylphosphonate (a nerve agent simulant). Such fabricated sensors survived a Scotch-tape peel test and were found insensitive to repeated bending to a small 0.5 cm radius.

  15. Electronic properties of impurity-infected few-layer graphene nanoribbons

    Energy Technology Data Exchange (ETDEWEB)

    Mousavi, Hamze, E-mail: hamze.mousavi@gmail.com [Department of Physics, Razi University, Kermanshah (Iran, Islamic Republic of); Nano Science and Nano Technology Research Center, Razi University, Kermanshah (Iran, Islamic Republic of); Bagheri, Mehran [Laser and Plasma Research Institute, Shahid Beheshti University, G.C., Evin, Tehran 19835-63113 (Iran, Islamic Republic of)

    2015-02-01

    Spurred by achievements in devising different multilayered graphene-based nano-systems, based on the random tight-binding Hamiltonian model and within the coherent potential approximation, the influence of varying the number of layers and the effect of doping by the boron and nitrogen impurities on the density of states of a mono- and few-layer armchair- and zigzag-edge graphene nanoribbons are theoretically investigated. When the nanoribbons are pristine, with increasing the number of layers the band gap of the armchair nanoribbons is decreased, yet the zigzag ribbons remain metallic and depending on the number of the layers few peaks are appeared around the zero-energy level. Moreover, in the presence of impurities, the band gap of the armchair nanoribbons is decreased for each number of layers. The Van-Hove singularities are steadily broadened and the density of states move to a higher (lower) value of the energy as a result of doping with boron (nitrogen) atoms. This study could provide with us to explore and devise new optoelectronic devices based on the impurity-infected graphene nanoribbons with tunable widths and edges.

  16. The IONORT-ISP-WC system: Inclusion of an electron collision frequency model for the D-layer

    Science.gov (United States)

    Settimi, Alessandro; Pietrella, Marco; Pezzopane, Michael; Bianchi, Cesidio

    2015-04-01

    The IONORT-ISP system (IONOspheric Ray-Tracing - IRI-SIRMUP-PROFILES) was recently developed and tested by comparing the measured oblique ionograms over the radio link between Rome (41.89°N, 12.48°E), Italy, and Chania (35.51°N, 24.02°E), Greece, with the IONORT-ISP simulated oblique ionograms (Settimi et al., 2013). The present paper describes an upgrade of the system to include: (a) electron-neutral collision have been included by using a collision frequency model that consists of a double exponential profile; (b) the ISP three dimensional (3-D) model of electron density profile grid has been extended down to the altitude of the D-layer; (c) the resolution in latitude and longitude of the ISP 3-D model of electron density profile grid has been increased from 2° × 2° to 1° × 1°. Based on these updates, a new software tool called IONORT-ISP-WC (WC means with collisions) was developed, and a database of 33 IONORT-ISP-WC synthesized oblique ionograms calculated for single (1-hop paths) and multiple (3-hop paths) ionospheric reflections. The IONORT-ISP-WC simulated oblique ionograms were compared with the IONORT-IRI-WC synthesized oblique ionograms, generated by applying IONORT in conjunction with the International Reference Ionosphere (IRI) 3-D electron density grid, and the observed oblique ionograms over the aforementioned radio link. The results obtained show that (1) during daytime, for the lower ionospheric layers, the traces of the synthesized ionograms are cut away at low frequencies because of HF absorption; (2) during night-time, for the higher ionospheric layers, the traces of the simulated ionograms at low frequencies are not cut off (very little HF absorption); (3) the IONORT-ISP-WC MUF values are more accurate than the IONORT-IRI-WC MUF values.

  17. Transverse acceptance calculation for continuous ion beam injection into the electron beam ion trap charge breeder of the ReA post-accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Kittimanapun, K., E-mail: kritsadak@slri.or.th [National Superconducting Cyclotron Laboratory (NSCL), Michigan State University (MSU), 640 S. Shaw Lane, East Lansing, Michigan 48824 (United States); Synchrotron Light Research Institute (SLRI), 111 University Avenue, Muang District, Nakhon Ratchasima, 30000 (Thailand); Baumann, T.M.; Lapierre, A.; Schwarz, S. [National Superconducting Cyclotron Laboratory (NSCL), Michigan State University (MSU), 640 S. Shaw Lane, East Lansing, Michigan 48824 (United States); Bollen, G. [National Superconducting Cyclotron Laboratory (NSCL), Michigan State University (MSU), 640 S. Shaw Lane, East Lansing, Michigan 48824 (United States); Facility for Rare Isotope Beams (FRIB), Michigan State University, 640 S. Shaw Lane, East Lansing, Michigan 48824 (United States)

    2015-11-11

    The ReA post-accelerator at the National Superconducting Cyclotron Laboratory (NSCL) employs an electron beam ion trap (EBIT) as a charge breeder. A Monte-Carlo simulation code was developed to calculate the transverse acceptance phase space of the EBIT for continuously injected ion beams and to determine the capture efficiency in dependence of the transverse beam emittance. For this purpose, the code records the position and time of changes in charge state of injected ions, leading either to capture or loss of ions. To benchmark and validate the code, calculated capture efficiencies were compared with results from a geometrical model and measurements. The results of the code agree with the experimental findings within a few 10%. The code predicts a maximum total capture efficiency of 50% for EBIT parameters readily achievable and an efficiency of up to 80% for an electron beam current density of 1900 A/cm{sup 2}.

  18. On the local injection of emitted electrons into micrograins on the surface of A{sup III}–B{sup V} semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Zhukov, N. D., E-mail: ndzhukov@rambler.ru; Glukhovskoi, E. G.; Khazanov, A. A. [Saratov State University (Russian Federation)

    2016-06-15

    The characteristics of the injection of electrons into a semiconductor from a microprobe–micrograin nanogap are investigated with a tunneling microscope in the mode of field emission into locally selected surface microcrystals of indium antimonide, indium arsenide, and gallium arsenide. The current mechanisms are established and their parameters are determined by comparing the experimental I–V characteristics and those calculated from formulas of current transport. The effect of limitation of the current into the micrograins of indium antimonide and indium arsenide which manifests itself at injection levels exceeding a certain critical value, e.g., 6 × 10{sup 16} cm{sup –3} for indium antimonide and 4 × 10{sup 17} cm{sup –3} for indium arsenide, is discovered. A physical model, i.e., the localization of electrons in the surface area of a micrograin due to their Coulomb interaction, is proposed.

  19. Investigation of Electronic and Opto-Electronic Properties of Two-Dimensional (2D) Layers of Copper Indium Selenide Field Effect Transistors

    Science.gov (United States)

    Patil, Prasanna Dnyaneshwar

    Investigations performed in order to understand the electronic and optoelectronic properties of field effect transistors based on few layers of 2D Copper Indium Selenide (CuIn7Se11) are reported. In general, field effect transistors (FETs), electric double layer field effect transistors (EDL-FETs), and photodetectors are crucial part of several electronics based applications such as tele-communication, bio-sensing, and opto-electronic industry. After the discovery of graphene, several 2D semiconductor materials like TMDs (MoS2, WS2, and MoSe2 etc.), group III-VI materials (InSe, GaSe, and SnS2 etc.) are being studied rigorously in order to develop them as components in next generation FETs. Traditionally, thin films of ternary system of Copper Indium Selenide have been extensively studied and used in optoelectronics industry as photoactive component in solar cells. Thus, it is expected that atomically thin 2D layered structure of Copper Indium Selenide can have optical properties that could potentially be more advantageous than its thin film counterpart and could find use for developing next generation nano devices with utility in opto/nano electronics. Field effect transistors were fabricated using few-layers of CuIn7Se11 flakes, which were mechanically exfoliated from bulk crystals grown using chemical vapor transport technique. Our FET transport characterization measurements indicate n-type behavior with electron field effect mobility microFE ≈ 36 cm2 V-1 s-1 at room temperature when Silicon dioxide (SiO2) is used as a back gate. We found that in such back gated field effect transistor an on/off ratio of 104 and a subthreshold swing ≈ 1 V/dec can be obtained. Our investigations further indicate that Electronic performance of these materials can be increased significantly when gated from top using an ionic liquid electrolyte [1-Butyl-3-methylimidazolium hexafluorophosphate (BMIM-PF6)]. We found that electron field effect mobility microFE can be increased from

  20. Opto-electronic properties of SnO2 layers obtained by SPD and ECD techniques

    International Nuclear Information System (INIS)

    Enesca, Alexandru; Bogatu, Cristina; Voinea, Mihaela; Duta, Anca

    2010-01-01

    The paper presents a comparative approach concerning the properties of SnO 2 thin layers obtained via spray pyrolysis deposition (SPD) and electro-chemical deposition (ECD). The influences of crystalline structure (X-ray diffraction), morphology (atomic force microscopy, contact angle) on the electric (electrical conductivity) properties of the layers were studied. The SPD samples present a porous morphology with high surface energy compared with ECD samples characterized by a dense morphology. The photocatalytic efficiency of the samples was tested in the photodegradation of methylene blue and the higher values (57%) correspond to SPD samples.

  1. Low resistivity ZnO-GO electron transport layer based CH3NH3PbI3 solar cells

    Directory of Open Access Journals (Sweden)

    Muhammad Imran Ahmed

    2016-06-01

    Full Text Available Perovskite based solar cells have demonstrated impressive performances. Controlled environment synthesis and expensive hole transport material impede their potential commercialization. We report ambient air synthesis of hole transport layer free devices using ZnO-GO as electron selective contacts. Solar cells fabricated with hole transport layer free architecture under ambient air conditions with ZnO as electron selective contact achieved an efficiency of 3.02%. We have demonstrated that by incorporating GO in ZnO matrix, low resistivity electron selective contacts, critical to improve the performance, can be achieved. We could achieve max efficiency of 4.52% with our completed devices for ZnO: GO composite. Impedance spectroscopy confirmed the decrease in series resistance and an increase in recombination resistance with inclusion of GO in ZnO matrix. Effect of temperature on completed devices was investigated by recording impedance spectra at 40 and 60 oC, providing indirect evidence of the performance of solar cells at elevated temperatures.

  2. Low resistivity ZnO-GO electron transport layer based CH3NH3PbI3 solar cells

    Science.gov (United States)

    Ahmed, Muhammad Imran; Hussain, Zakir; Mujahid, Mohammad; Khan, Ahmed Nawaz; Javaid, Syed Saad; Habib, Amir

    2016-06-01

    Perovskite based solar cells have demonstrated impressive performances. Controlled environment synthesis and expensive hole transport material impede their potential commercialization. We report ambient air synthesis of hole transport layer free devices using ZnO-GO as electron selective contacts. Solar cells fabricated with hole transport layer free architecture under ambient air conditions with ZnO as electron selective contact achieved an efficiency of 3.02%. We have demonstrated that by incorporating GO in ZnO matrix, low resistivity electron selective contacts, critical to improve the performance, can be achieved. We could achieve max efficiency of 4.52% with our completed devices for ZnO: GO composite. Impedance spectroscopy confirmed the decrease in series resistance and an increase in recombination resistance with inclusion of GO in ZnO matrix. Effect of temperature on completed devices was investigated by recording impedance spectra at 40 and 60 oC, providing indirect evidence of the performance of solar cells at elevated temperatures.

  3. Advances on Sensitive Electron-injection based Cameras for Low-Flux, Short-Wave-Infrared Applications

    Directory of Open Access Journals (Sweden)

    Vala Fathipour

    2016-08-01

    Full Text Available Short-wave infrared (SWIR photon detection has become an essential technology in the modern world. Sensitive SWIR detector arrays with high pixel density, low noise levels and high signal-to-noise-ratios are highly desirable for a variety of applications including biophotonics, light detection and ranging, optical tomography, and astronomical imaging. As such many efforts in infrared detector research are directed towards improving the performance of the photon detectors operating in this wavelength range.We review the history, principle of operation, present status and possible future developments of a sensitive SWIR detector technology, which has demonstrated to be one of the most promising paths to high pixel density focal plane arrays for low flux applications. The so-called electron-injection (EI detector was demonstrated for the first time (in 2007. It offers an overall system-level sensitivity enhancement compared to the p-i-n diode due to a stable internal avalanche-free gain. The amplification method is inherently low noise, and devices exhibit an excess noise of unity. The detector operates in linear-mode and requires only bias voltage of a few volts. The stable detector characteristics, makes formation of high yield large-format, and high pixel density focal plane arrays less challenging compared to other detector technologies such as avalanche photodetectors. Detector is based on the mature InP material system (InP/InAlAs/GaAsSb/InGaAs, and has a cutoff wavelength of 1700 nm. It takes advantage of a unique three-dimensional geometry and combines the efficiency of a large absorbing volume with the sensitivity of a low-dimensional switch (injector to sense and amplify signals. Current devices provide high-speed response ~ 5 ns rise time, and low jitter ~ 12 ps at room temperature. The internal dark current density is ~ 1 μA/cm2 at room temperature decreasing to 0.1 nA/cm2 at 160 K.EI detectors have been designed, fabricated, and

  4. Advances on Sensitive Electron-injection based Cameras for Low-Flux, Short-Wave-Infrared Applications

    Science.gov (United States)

    Fathipour, Vala; Bonakdar, Alireza; Mohseni, Hooman

    2016-08-01

    Short-wave infrared (SWIR) photon detection has become an essential technology in the modern world. Sensitive SWIR detector arrays with high pixel density, low noise levels and high signal-to-noise-ratios are highly desirable for a variety of applications including biophotonics, light detection and ranging, optical tomography, and astronomical imaging. As such many efforts in infrared detector research are directed towards improving the performance of the photon detectors operating in this wavelength range. We review the history, principle of operation, present status and possible future developments of a sensitive SWIR detector technology, which has demonstrated to be one of the most promising paths to high pixel density focal plane arrays for low flux applications. The so-called electron-injection (EI) detector was demonstrated for the first time (in 2007). It offers an overall system-level sensitivity enhancement compared to the p-i-n diode due to a stable internal avalanche-free gain. The amplification method is inherently low noise, and devices exhibit an excess noise of unity. The detector operates in linear-mode and requires only bias voltage of a few volts. The stable detector characteristics, makes formation of high yield large-format, and high pixel density focal plane arrays less challenging compared to other detector technologies such as avalanche photodetectors. Detector is based on the mature InP material system (InP/InAlAs/GaAsSb/InGaAs), and has a cutoff wavelength of 1700 nm. It takes advantage of a unique three-dimensional geometry and combines the efficiency of a large absorbing volume with the sensitivity of a low-dimensional switch (injector) to sense and amplify signals. Current devices provide high-speed response ~ 5 ns rise time, and low jitter ~ 12 ps at room temperature. The internal dark current density is ~ 1 μA/cm2 at room temperature decreasing to 0.1 nA/cm2 at 160 K. EI detectors have been designed, fabricated, and tested during two

  5. Heterogeneous electron transfer kinetics and electrocatalytic behaviour of mixed self-assembled ferrocenes and SWCNT layers

    CSIR Research Space (South Africa)

    Nkosi, D

    2010-01-01

    Full Text Available The electron transfer dynamics and electrocatalytic behaviour of ferrocene-terminated self-assembled monolayers (SAMs), co-adsorbed with single-walled carbon nanotubes (SWCNTs) on a gold electrode, have been interrogated for the first time...

  6. Zwitter-Ionic Polymer Applied as Electron Transportation Layer for Improving the Performance of Polymer Solar Cells

    Directory of Open Access Journals (Sweden)

    Qiaoyun Chen

    2017-11-01

    Full Text Available A zwitter-ionic polymer poly (sulfobetaine methacrylate (denoted by PSBMA was employed as an electron transportation layer (ETL in polymer solar cells (PSCs based on poly(3-hexylthiophene (P3HT:[6,6]-phenyl-C61-butyric acid methyl ester (PC61BM. PSBMA is highly soluble in trifluoroethanol, showing an orthogonal solubility to the solvent of the active layer in the preparation of multilayered PSCs. Upon introduction of PSBMA, the short circuit current and as a consequence the power conversion efficiency of the corresponding PSCs are dramatically improved, which can be because of the relatively high polarity of PSBMA compared with the other ETLs. This study demonstrated that zwitter-ionic polymer should be a competitive potential candidate of ETLs in PSCs.

  7. Characterization of the sp sup 2 bonds network in a-C:H layers with nuclear magnetic resonance, electron energy loss spectroscopy and electron spin resonance

    Energy Technology Data Exchange (ETDEWEB)

    Kleber, R.; Jung, K.; Ehrhardt, H. (Fachbereich Physik, Univ. Kaiserslautern (Germany)); Muehling, I.; Breuer, K. (Technische Univ. Chemnitz, Sektion Physik/Elektronische Bauelemente (Germany)); Metz, H.; Engelke, F. (Karl-Marx-Univ., Sektion Physik, Leipzig (Germany))

    1991-12-01

    a-C:H layers prepared at different ion energies have been investigated by several methods including {sup 13}C nuclear magnetic resonance (NMR), electron energy loss spectroscopy (EELS) and electron spin resonance (ESR). The sp{sup 2} fraction of the samples rose from 27% to about 60 at.% with increasing ion energies from 30 eV to 170 eV. In the EELS spectra of these layers the intensity of the {pi}{yields}{pi}{sup *} transition between 4 and 7 eV showed no significant variation. But a shift of the peak is observed from 7 eV to lower energy losses with increasing ion energies indicating an enhanced formation of larger sp{sup 2} cluster sizes. This shift is accompanied by a broadening of the energy loss peak, suggesting a broadening of the cluster size distribution. The ESR spectra showed an increase of the spin density by more than one order of magnitude with increasing ion energies. Simultaneously the linewidth of the ESR signal gets narrower. This can also be interpreted as an increasing cluster size from single benzene rings to three and four fused six-fold rings. Hence, the EELS and ESR spectra lead to the same conclusions with respect to the microstructure of the a-C:H network. (orig.).

  8. Sputter-induced formation of an electron accumulation layer in In0.52Al0.48As

    Science.gov (United States)

    Maslar, J. E.; Bohn, P. W.; Agarwala, S.; Adesida, I.; Caneau, C.; Bhat, R.

    1994-06-01

    Ar-sputtering of In0.52Al0.48As was investigated with room-temperature Raman and photoluminescence spectroscopy. A clear increase of carrier density in the near-surface region was observed in the Raman spectra. The PL intensity was found to depend in a complex way on plasma self-bias potential, incident laser irradiance, and InAlAs doping level, indicating that the recombination mechanisms dominating the PL response differ with changing experimental conditions. The observed trends can be explained by sputter-induced formation of an electron accumulation layer in the near-surface region.

  9. Tuning the two-dimensional electron liquid at oxide interfaces by buffer-layer-engineered redox reactions

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Green, Robert J.; Sutarto, Ronny

    2017-01-01

    polarities and redox reactions from disordered overlayers grown at room temperature. Using resonant x-ray reflectometry experiments, we quantify redox reactions from oxide overlayers on STO as well as polarity induced electronic reconstruction at epitaxial LSMO/STO interfaces. The analysis reveals how...... these effects can be combined in a STO/LSMO/disordered film trilayer system to yield high mobility modulation doped 2DELs, where the buffer layer undergoes a partial transformation from perovskite to brownmillerite structure. This uncovered interplay between polar discontinuities and redox reactions via buffer...

  10. Hybrid graphene-metal oxide solution processed electron transport layers for large area high-performance organic photovoltaics.

    Science.gov (United States)

    Beliatis, Michail J; Gandhi, Keyur K; Rozanski, Lynn J; Rhodes, Rhys; McCafferty, Liam; Alenezi, Mohammad R; Alshammari, Abdullah S; Mills, Christopher A; Jayawardena, K D G Imalka; Henley, Simon J; Silva, S Ravi P

    2014-04-02

    Solution processed core-shell nano-structures of metal oxide-reduced graphene oxide (RGO) are used as improved electron transport layers (ETL), leading to an enhancement in photocurrent charge transport in PCDTBT:PC70 BM for both single cell and module photovoltaic devices. As a result, the power conversion efficiency for the devices with RGO-metal oxides for ETL increases 8% in single cells and 20% in module devices. © 2014 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. In situ voltammetric de-alloying of fuel cell catalyst electrode layer: A combined scanning electron microscope/electron probe micro-analysis study

    Science.gov (United States)

    Srivastava, Ratndeep; Mani, Prasanna; Strasser, Peter

    In situ voltammetric de-alloying, i.e. partial selective dissolution of less noble alloy components, is a recently proposed, effective strategy to prepare active electrocatalysts for the oxygen reduction reaction (ORR) [S. Koh, P. Strasser, J. Am. Chem. Soc. 129 (2007) 12624-12625; R. Srivastava, P. Mani, N. Hahn, P. Strasser, Angew. Chem. Int. Ed. 46 (2007) 8988-8991]. However, in situ de-alloying of bimetallics inside electrode layers of membrane-electrode-assemblies (MEAs) seems to defy the requirement of keeping the membrane free of cationic contaminants; yet, when followed by ion exchange, de-alloyed cathodes result in previously unachieved single cell activities of polymer electrolyte membrane fuel cell cathode layers of up to 0.4 A mg Pt -1 at 900 mV cell voltage. The effects of voltammetric Cu de-alloying on the MEA have never been studied before. In the present study, we therefore address this issue and report detailed scanning electron microscope (SEM) imaging of the morphology and electron probe micro-analysis (EPMA) mapping of a MEA at various stages of the de-alloying and ion-exchange process. We investigate the significant loss of Cu from the cathode particle catalyst after de-alloying, demonstrate how the membrane can be cleaned from Cu-ion contamination using ion exchange with protons from liquid inorganic acids, and show that Cu ion exchange does ultimately not affect the activated catalyst particles inside the cathode layer. We correlate the microscopic study of the MEA with its cyclic voltammetric response curves as well as the single cell polarization data.

  12. Electrochemical properties of porous carbon black layer as an electron injector into iodide redox couple

    International Nuclear Information System (INIS)

    Kim, Jung-Min; Rhee, Shi-Woo

    2012-01-01

    Highlights: ► Carbon black (CB) porous layer for triiodide (I 3 − ) ion reduction is coated with spray coating method at 120 °C on the fluorine-doped tin oxide glass. ► The electrochemical impedance spectroscopy is analyzed for a symmetric cell and a new circuit model is applied to identify electrochemical parameters. ► Decreased particle size and increased thickness improve the catalytic activity because of the increase in the surface area and the conductivity of the CB layer. - Abstract: Electrochemical properties of carbon black (CB) porous layer as a counter electrode in dye-sensitized solar cells (DSC) are studied. CB electrode for triiodide (I 3 − ) ion reduction is coated with spray coating method on the fluorine-doped tin oxide glass at 120 °C. The CB particle size is varied from 20 nm to 90 nm and the CB electrode thickness is controlled from 1 μm to 9 μm by controlling the spraying time. The electrochemical impedance spectroscopy is analyzed for a symmetric cell and a new circuit model is applied to identify electrochemical parameters. As the CB particle size is decreased, the catalytic activity is improved because of the increase in the surface area and the conductivity of the CB layer. Increased CB electrode thickness also improves the catalytic activity and leads to the low charge transfer resistance at the electrolyte/CB electrode interface. The CB counter electrode with the particle size of 20 nm and the thickness of 9 μm for DSC shows the energy conversion efficiency of 7.2% with the highest fill factor (FF) of 65.6%, which is similar to the Pt counter electrode with FF of 65.8% and the efficiency of 7.6%.

  13. An investigation of the reflection of low energy electrons from the surfaces of layered transition metal dichalcogenides

    International Nuclear Information System (INIS)

    Smith, A.E.; Mohamed, M.H.; Wohlenberg, T.; Johnson, E.; Chadderton, L.T.; Moeller, P.J.

    1980-01-01

    Experimental measurements, using the total current spectroscopy (TCS) technique, on the energy dependence of the reflection of low energy electrons from clean surfaces of layered transition metal dichalcogenides are reported for the molybdenum semiconductor compounds 2H-MoS 2 and 2H-MoSe 2 . A simple model calculation involving both elastic and inelastic scattering is presented and correspondence established with the experimental spectra. In this picture information on the electronic band structure of the materials can then be extracted from the single particle component of the inelastic scattering. The model is extended to show that a feature in the 2H-MoS 2 experimental spectrum may be attributed to the excitation of an intermediate plasmon. (Auth.)

  14. Radiation emission at channeling of electrons in a strained layer Si1-xGex undulator crystal

    DEFF Research Database (Denmark)

    Backe, H.; Krambrich, D.; Lauth, W.

    2013-01-01

    Experiments have been performed at the Mainz Microtron MAMI to explore the radiation emission spectra from a crystalline undulator at electron beam energies of 270 and 855 MeV. The epitaxially grown graded composition strained layer Si1-xGex undulator had 4-period with a period length View the Math......ML source. Spectra taken at the beam energy of 270 MeV at channeling in the undulating (110) planes exhibit a broad excess yield around the theoretically expected photon energies of 0.069 MeV, as compared with a flat silicon reference crystal. Model calculations on the basis of synchrotron-like radiation...... emission from finite single arc elements, taking into account also coherence effects, suggest that evidence for a weak undulator effect has been observed for the first time for electrons....

  15. Electron beam induced coloration and luminescence in layered structure of WO3 thin films grown by pulsed dc magnetron sputtering

    International Nuclear Information System (INIS)

    Karuppasamy, A.; Subrahmanyam, A.

    2007-01-01

    Tungsten oxide thin films have been deposited by pulsed dc magnetron sputtering of tungsten in argon and oxygen atmosphere. The as-deposited WO 3 film is amorphous, highly transparent, and shows a layered structure along the edges. In addition, the optical properties of the as-deposited film show a steplike behavior of extinction coefficient. However, the electron beam irradiation (3.0 keV) of the as-deposited films results in crystallization, coloration (deep blue), and luminescence (intense red emission). The above changes in physical properties are attributed to the extraction of oxygen atoms from the sample and the structural modifications induced by electron bombardment. The present method of coloration and luminescence has a potential for fabricating high-density optical data storage device

  16. Non-Fourier Heat Transfer with Phonons and Electrons in a Circular Thin Layer Surrounding a Hot Nanodevice

    Directory of Open Access Journals (Sweden)

    Vito Antonio Cimmelli

    2015-07-01

    Full Text Available A nonlocal model for heat transfer with phonons and electrons is applied to infer the steady-state radial temperature profile in a circular layer surrounding an inner hot component. Such a profile, following by the numerical solution of the heat equation, predicts that the temperature behaves in an anomalous way, since for radial distances from the heat source smaller than the mean-free path of phonons and electrons, it increases for increasing distances. The compatibility of this temperature behavior with the second law of thermodynamics is investigated by calculating numerically the local entropy production as a function of the radial distance. It turns out that such a production is positive and strictly decreasing with the radial distance.

  17. Study of the structure of a thin aluminum layer on the vicinal surface of a gallium arsenide substrate by high-resolution electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Lovygin, M. V., E-mail: lemi@miee.ru; Borgardt, N. I. [National Research University of Electronic Technology “MIET” (Russian Federation); Seibt, M. [Universität Göttingen, IV Physikalisches Institut (Germany); Kazakov, I. P.; Tsikunov, A. V. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)

    2015-12-15

    The results of electron-microscopy studies of a thin epitaxial aluminum layer deposited onto a misoriented gallium-arsenide substrate are reported. It is established that the layer consists of differently oriented grains, whose crystal lattices are coherently conjugated with the substrate with the formation of misfit dislocations, as in the case of a layer on a singular substrate. Atomic steps on the substrate surface are visualized, and their influence on the growth of aluminum crystal grains is discussed.

  18. The INTERBALL-Tail ELECTRON experiment: initial results on the low-latitude boundary layer of the dawn magnetosphere

    Directory of Open Access Journals (Sweden)

    J.-A. Sauvaud

    Full Text Available The Toulouse electron spectrometer flown on the Russian project INTERBALL-Tail performs electron measurements from 10 to 26 000 eV over a 4 solid angle in a satellite rotation period. The INTERBALL-Tail probe was launched on 3 August 1995 together with a subsatellite into a 65° inclination orbit with an apogee of about 30 RE. The INTERBALL mission also includes a polar spacecraft launched in August 1996 for correlated studies of the outer magnetosphere and of the auroral regions. We present new observations concerning the low-latitude boundary layers (LLBL of the magnetosphere obtained near the dawn magnetic meridian. LLBL are encountered at the interface between two plasma regimes, the magnetosheath and the dayside extension of the plasma sheet. Unexpectedly, the radial extent of the region where LLBL electrons can be sporadically detected as plasma clouds can reach up to 5 RE inside the magnetopause. The LLBL core electrons have an average energy of the order of 100 eV and are systematically field-aligned and counterstreaming. As a trend, the temperature of the LLBL electrons increases with decreasing distance to Earth. Along the satellite orbit, the apparent time of occurrence of LLBL electrons can vary from about 5 to 20 min from one pass to another. An initial first comparison between electron- and magnetic-field measurements indicates that the LLBL clouds coincide with a strong increase in the magnetic field (by up to a factor of 2. The resulting strong magnetic field gradient can explain why the plasma-sheet electron flux in the keV range is strongly depressed in LLBL occurrence regions (up to a factor of sim10. We also show that LLBL electron encounters are related to field-aligned current structures and that wide LLBL correspond to northward interplanetary magnetic field. Evidence for LLBL/plasma-sheet electron leakage into the magnetosheath during southward IMF is also presented.

  19. Transparent and Highly Responsive Phototransistors Based on a Solution-Processed, Nanometers-Thick Active Layer, Embedding a High-Mobility Electron-Transporting Polymer and a Hole-Trapping Molecule.

    Science.gov (United States)

    Caranzi, Lorenzo; Pace, Giuseppina; Sassi, Mauro; Beverina, Luca; Caironi, Mario

    2017-08-30

    Organic materials are suitable for light sensing devices showing unique features such as low cost, large area, and flexibility. Moreover, transparent photodetectors are interesting for smart interfaces, windows, and display-integrated electronics. The ease of depositing ultrathin organic films with simple techniques enables low light absorbing active layers, resulting in the realization of transparent devices. Here, we demonstrate a strategy to obtain high efficiency organic photodetectors and phototransistors based on transparent active layers with a visible transmittance higher than 90%. The photoactive layer is composed of two phases, each a few nanometers thick. First, an acceptor polymer, which is a good electron-transporting material, on top of which a small molecule donor material is deposited, forming noncontinuous domains. The small molecule phase acts as a trap for holes, thus inducing a high photoconductive gain, resulting in a high photoresponsivity. The organic transparent detectors proposed here can reach very high external quantum efficiency and responsivity values, which in the case of the phototransistors can be as high as ∼74000% and 340 A W -1 at 570 nm respectively, despite an absorber total thickness below 10 nm. Moreover, frequency dependent 2D photocurrent mapping allows discrimination between the contribution of a fast but inefficient and highly spatially localized photoinduced injection mechanism at the electrodes, and the onset of a slower and spatially extended photoconductive process, leading to high responsivity.

  20. Single-layer 1T‧-MoS2 under electron irradiation from ab initio molecular dynamics

    Science.gov (United States)

    Pizzochero, Michele; Yazyev, Oleg V.

    2018-04-01

    Irradiation with high-energy particles has recently emerged as an effective tool for tailoring the properties of two-dimensional transition metal dichalcogenides. In order to carry out an atomically-precise manipulation of the lattice, a detailed understanding of the beam-induced events occurring at the atomic scale is necessary. Here, we investigate the response of 1T' -MoS2 to the electron irradiation by ab initio molecular dynamics means. Our simulations suggest that an electron beam with energy smaller than 75 keV does not result in any knock-on damage. The displacement threshold energies are different for the two nonequivalent sulfur atoms in 1T' -MoS2 and strongly depend on whether the top or bottom chalcogen layer is considered. As a result, a careful tuning of the beam energy can promote the formation of ordered defects in the sample. We further discuss the effect of the electron irradiation in the neighborhood of a defective site, the mobility of the sulfur vacancies created and their tendency to aggregate. Overall, our work provides useful guidelines for the imaging and the defect engineering of 1T' -MoS2 using electron microscopy.

  1. Electronic structure of layered ferroelectric high-k titanate La2Ti2O7

    DEFF Research Database (Denmark)

    Atuchin, V. V.; Gavrilova, T. A.; Grivel, Jean-Claude

    2009-01-01

    The electronic structure of binary titanate La2Ti2O7 has been studied by x-ray photoelectron spectroscopy. Spectral features of valence band and all constituent element core levels have been considered. The Auger parameters of titanium and oxygen in La2Ti2O7 are determined as alpha(Ti) = 872...

  2. Electronic structure of layered titanate Nd2Ti2O7

    DEFF Research Database (Denmark)

    Atuchin, V.V.; Gavrilova, T.A.; Grivel, Jean-Claude

    2008-01-01

    The electronic structure of the binary titanate Nd2Ti2O7 has been studied by X-ray photoelectron spectroscopy (XPS). Spectral features of the valence band and all constituent element core levels have been considered. The Auger parameters of titanium and oxygen in Nd2Ti2O7 are determined as alpha...

  3. Electronic structure of layered ferroelectric high-k titanate Pr2Ti2O7

    DEFF Research Database (Denmark)

    Atuchin, V.V.; Gavrilova, T.A.; Grivel, Jean-Claude

    2012-01-01

    The spectroscopic parameters and electronic structure of binary titanate Pr2Ti2O7 have been studied by IR-, Raman and X-ray photoelectron spectroscopy (XPS) for the powder sample prepared by solid state synthesis. The spectral features of valence band and all constituent element core levels have...

  4. Qualitative detection of some electron donor drugs on thin-layer plates

    African Journals Online (AJOL)

    The detection reactions, which occurred instantaneously, were found to utilize the complex formation between chloranilic acid acting as the election acceptor and the drugs acting as the electron donors in non-aqueous media. Using the intensity of the purple coloration of the different complexes as a basis, it was possible to ...

  5. Peculiarities of interaction of the p{sub z}-, π- electrons and the σ{sub p}-holes at the top 1–6 layers of HOPG

    Energy Technology Data Exchange (ETDEWEB)

    Dementjev, A.P., E-mail: demcarbon@yandex.ru; Ivanov, K.E.

    2017-03-31

    Graphical abstract: The formation of π-bands and σ{sub p}- holes as result of the p{sub z} → π transitions in 2–6 graphene layers HOPG. The valence band spectrum taken from Murday et al. (1981). - Abstract: The present work continues the analysis of results of Dementjev et al. (2015) in order to identify the interlayer interactions of the π-bands. Analysis of the N(E) C KVV Auger spectra of highly-ordered pyro-graphite showed the absence of the electron exchange between the π-bands in 1–6 layers. Since the π-bands are formed by the p{sub z} → π transitions, one can suggest that the π-band occupation at each graphene layer is formed by the p{sub z}-electrons of this layer. Since the p{sub z} electrons belong to the σ{sub p}-bands, the p{sub z} → π transitions in the σ{sub p}-bands in each of 2–6 graphene layers result in formation of holes H, whose concentration is equal to the concentration of electrons in the π-bands [H{sub i}] ≡ [π{sub i}]. This shows the origin of the ambipolar conductivity in graphene. The absence of the electronic interaction between the π-bands allows a suggestion that the interaction between top six graphene layers is due to the van der Waals electrostatic attractive forces. These forces promote the p{sub z} → π transitions in each of the 2–6 graphene layers and depend on the number of graphene layers above. The N(E) C KVV Auger spectra allow identification of number (1–6) of graphene layers and the π-band occupation at each of the layer. For the first time a specification of the van der Waals forces in HOPG was done.

  6. A comparative study of hole and electron inversion layer quantization in MOS structures

    Directory of Open Access Journals (Sweden)

    Chaudhry Amit

    2010-01-01

    Full Text Available In this paper, an analytical model has been developed to study inversion layer quantization in nanoscale Metal Oxide Semiconductor Field Effect Oxide p-(MOSFET. n-MOSFETs have been studied using the variation approach and the p-MOSFETs have been studied using the triangular well approach. The inversion charge density and gate capacitance analysis for both types of transistors has been done. There is a marked decrease in the inversion charge density and the capacitance of the p-MOSFET as compared to n-MOSFETs. The results are compared with the numerical results showing good agreement.

  7. Structure and wear resistance of Ti-TiC-TiB layers obtained by non-vacuum electron beam cladding

    Directory of Open Access Journals (Sweden)

    Lenivtseva Olga

    2017-01-01

    Full Text Available In this study structure and tribotechnical properties of cp-titanium after non-vacuum electron beam cladding of powder mixture containing boron carbide were investigated. Structural investigations were carried out using optical and scanning electron microscopy and X-ray analysis. The thickness of cladded layers was 1.3…2.5 mm. The beam moving speed was not influence the phase composition of coatings. The main phases of the surface layers were α- titanium (α′.- titanium, titanium carbide TiC and titanium boride TiB. It was determined that the average value of microhardness of the samples formed with the speed 25 mm/s was three times higher in comparison with substrate metal. A decrease in the beam moving speed led to an increase in the heat input per unit area and was accompanied by a reduction in the coating microhardness. To evaluate the wear resistance, friction test of the obtained materials against fixed abrasive particles was performed. The maximum relative wear resistance was exhibited by the coatings after cladding of 20 wt. % boron carbide and 30 wt. % titanium with the beam moving speed of 25 mm/s. Their wear resistance was 1.53 times higher as compared to cp-titanium.

  8. ELECTRON DIFFRACTION STUDY OF GRAPHENE LAYERS STRUCTURE ON CONDUCTIVE AND SEMI-INSULATING 6H-SIC (0001 SUBSTRATES

    Directory of Open Access Journals (Sweden)

    I. S. Kotousova

    2015-03-01

    Full Text Available Subject of study. Findings for the surface structure of conductive and semi-insulating substrates 6H-SiC(0001 and epitaxial graphene layers grown on them are presented. Materials and methods. We used two types of silicon carbide substrates of 6H polytype as a substrate: conductive (with resistivity less than 103 Ohm·cm, and semi-insulating (with resistivity greater than 105 Ohm·cm. Synthesis of graphene layers on substrates was carried out by thermal decomposition of SiC surface at the temperature of 1350ºC for 20 minutes in a vacuum sublimation epitaxy setup. Registration of high-energy electron diffraction (RHEED patterns for reflection was carried out using two devices: electronograph EMR-102 at an accelerating voltage of 75 kV and electron diffractometer, built into the unit MBE Compact 21T (Riber France, at an accelerating voltage of 30 kV. Main results. The oriented growth of graphene is observed on the conductive substrate. Both oriented and disordered kinds of graphene grow on the semi-insulating substrate due to the partially formation of the polycrystalline component in the multilayered graphene film which in turn is caused by the lower perfection structure of the semi-insulating substrate surface as compared to the conductive one. Practical significance. Proposed findings will help to understand the quality dependence of the grown graphene film on the structure of the used silicon carbide substrate.

  9. Electrical response of electron selective atomic layer deposited TiO2‑x heterocontacts on crystalline silicon substrates

    Science.gov (United States)

    Ahiboz, Doğuşcan; Nasser, Hisham; Aygün, Ezgi; Bek, Alpan; Turan, Raşit

    2018-04-01

    Integration of oxygen deficient sub-stoichiometric titanium dioxide (TiO2‑x) thin films as the electron transporting-hole blocking layer in solar cell designs are expected to reduce fabrication costs by eliminating high temperature processes while maintaining high conversion efficiencies. In this paper, we conducted a study to reveal the electrical properties of TiO2‑x thin films grown on crystalline silicon (c-Si) substrates by atomic layer deposition (ALD) technique. Effect of ALD substrate temperature, post deposition annealing, and doping type of the c-Si substrate on the interface states and TiO2‑x bulk properties were extracted by performing admittance (C-V, G-V) and current-voltage (J-V) measurements. Moreover, the asymmetry in C-V and J-V measurements between the p-n type and n-n TiO2‑x-c-Si heterojunction types were examined and the electron transport selectivity of TiO2‑x was revealed.

  10. Halide perovskite solar cells using monocrystalline TiO2 nanorod arrays as electron transport layers: impact of nanorod morphology

    Science.gov (United States)

    Thakur, Ujwal Kumar; Askar, Abdelrahman M.; Kisslinger, Ryan; Wiltshire, Benjamin D.; Kar, Piyush; Shankar, Karthik

    2017-07-01

    This is the first report of a 17.6% champion efficiency solar cell architecture comprising monocrystalline TiO2 nanorods (TNRs) coupled with perovskite, and formed using facile solution processing without non-routine surface conditioning. Vertically oriented TNR ensembles are desirable as electron transporting layers (ETLs) in halide perovskite solar cells (HPSCs) because of potential advantages such as vectorial electron percolation pathways to balance the longer hole diffusion lengths in certain halide perovskite semiconductors, ease of incorporating nanophotonic enhancements, and optimization between a high contact surface area for charge transfer (good) versus high interfacial recombination (bad). These advantages arise from the tunable morphology of hydrothermally grown rutile TNRs, which is a strong function of the growth conditions. Fluorescence lifetime imaging microscopy of the HPSCs demonstrated a stronger quenching of the perovskite PL when using TNRs as compared to mesoporous/compact TiO2 thin films. Due to increased interfacial contact area between the ETL and perovskite with easier pore filling, charge separation efficiency is dramatically enhanced. Additionally, solid-state impedance spectroscopy results strongly suggested the suppression of interfacial charge recombination between TNRs and perovskite layer, compared to other ETLs. The optimal ETL morphology in this study was found to consist of an array of TNRs ∼300 nm in length and ∼40 nm in width. This work highlights the potential of TNR ETLs to achieve high performance solution-processed HPSCs.

  11. Imaging of phase change materials below a capping layer using correlative infrared near-field microscopy and electron microscopy

    Science.gov (United States)

    Lewin, M.; Hauer, B.; Bornhöfft, M.; Jung, L.; Benke, J.; Michel, A.-K. U.; Mayer, J.; Wuttig, M.; Taubner, T.

    2015-10-01

    Phase Change Materials (PCM) show two stable states in the solid phase with significantly different optical and electronic properties. They can be switched reversibly between those two states and are promising candidates for future non-volatile memory applications. The development of phase change devices demands characterization tools, yielding information about the switching process at high spatial resolution. Scattering-type Scanning Near-field Optical Microscopy (s-SNOM) allows for spectroscopic analyses of the different optical properties of the PCMs on the nm-scale. By correlating the optical s-SNOM images with transmission electron microscopy images of the same sample, we unambiguously demonstrate the correlation of the infrared optical contrast with the structural state of the phase change material. The investigated sample consists of sandwiched amorphous and crystalline regions of Ag 4 In 3 Sb 67 Te 26 below a 100 nm thick ( ZnS ) 80 - ( SiO2 ) 20 capping layer. Our results demonstrate the sensitivity of s-SNOM to small dielectric near-field contrasts even below a comparably thick capping layer ( 100 nm ).

  12. Direct sub-nanometer scale electron microscopy analysis of anion incorporation to self-ordered anodic alumina layers

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez-Rovira, L.; Lopez-Haro, M.; Hungria, A.B.; El Amrani, K. [Department of Materials Science and Metallurgical Engineering and Inorganic Chemistry, University of Cadiz, Republica Saharaui s/n, 11510 Puerto Real, Cadiz (Spain); Sanchez-Amaya, J.M. [Titania, Ensayos y Proyectos Industriales, S.L. Parque Tecnobahia, Edificio RETSE, Nave 4, 11500 El Puerto de Santa Maria (Cadiz) (Spain); Calvino, J.J. [Department of Materials Science and Metallurgical Engineering and Inorganic Chemistry, University of Cadiz, Republica Saharaui s/n, 11510 Puerto Real, Cadiz (Spain); Botana, F.J., E-mail: javier.botana@uca.e [Department of Materials Science and Metallurgical Engineering and Inorganic Chemistry, University of Cadiz, Republica Saharaui s/n, 11510 Puerto Real, Cadiz (Spain)

    2010-11-15

    Research highlights: {yields} Morphological and chemical characterization at atomic scale of porous alumina layers anodised in ordered regimes. {yields} Characterization based on the use of FEG-SEM, STEM-HAADF, STEM-EELS and STEM-X-EDS. {yields} Nanoscale distribution of P-, C- and S-bearing species in the pore wall. - Abstract: Ordered porous alumina layers prepared by two-step anodising in phosphoric, oxalic and sulphuric acids have been characterized at sub-nanometer scale using electron microscopy techniques. FEG-SEM and STEM-HAADF images allowed estimating the pore size, cell wall and pore wall thicknesses of the layers. Nanoanalytical characterization has been performed by STEM-EELS and STEM-X-EDS. Detailed features of the spatial distribution of anions in the pore wall of the films have been obtained. Maximum concentration of P-species occurs, approximately, at the middle of the pore wall; adjacent to the pore for C-species, whereas the distribution of S-species appears to be uniform.

  13. Demonstration of defect free EUV mask for 22nm NAND flash contact layer using electron beam inspection system

    Science.gov (United States)

    Shimomura, Takeya; Kawashima, Satoshi; Inazuki, Yuichi; Abe, Tsukasa; Takikawa, Tadahiko; Mohri, Hiroshi; Hayashi, Naoya; Wang, Fei; Ma, Long Eric; Zhao, Yan; Kuan, Chiyan; Xiao, Hong; Jau, Jack

    2011-04-01

    Fabrication of defect free EUV masks including their inspection is the most critical challenge for implementing EUV lithography into semiconductor high volume manufacturing (HVM) beyond 22nm half-pitch (HP) node. The contact to bit-line (CB) layers of NAND flash devices are the most likely the first lithography layers that EUV will be employed for manufacturing due to the aggressive scaling and the difficulty for making the pattern with the current ArF lithography. To assure the defect free EUV mask, we have evaluated electron beam inspection (EBI) system eXplore™ 5200 developed by Hermes Microvision, Inc. (HMI) [1]. As one knows, the main issue of EBI system is the low throughput. To solve this challenge, a function called Lightning Scan™ mode has been recently developed and installed in the system, which allows the system to only inspect the pattern areas while ignoring blanket areas, thus dramatically reduced the overhead time and enable us to inspect CB layers of NAND Flash device with much higher throughput. In this present work, we compared the Lightning scan mode with Normal scan mode on sensitivity and throughput. We found out the Lightning scan mode can improve throughput by a factor of 10 without any sacrifices of sensitivity. Furthermore, using the Lightning scan mode, we demonstrated the possibility to fabricate the defect free EUV masks with moderate inspection time.

  14. Dopant Distribution in Atomic Layer Deposited ZnO:Al Films Visualized by Transmission Electron Microscopy and Atom Probe Tomography.

    Science.gov (United States)

    Wu, Yizhi; Giddings, A Devin; Verheijen, Marcel A; Macco, Bart; Prosa, Ty J; Larson, David J; Roozeboom, Fred; Kessels, Wilhelmus M M

    2018-02-27

    The maximum conductivity achievable in Al-doped ZnO thin films prepared by atomic layer deposition (ALD) is limited by the low doping efficiency of Al. To better understand the limiting factors for the doping efficiency, the three-dimensional distribution of Al atoms in the ZnO host material matrix has been examined on the atomic scale using a combination of high-resolution transmission electron microscopy (TEM) and atom probe tomography (APT). Although the Al distribution in ZnO films prepared by so-called "ALD supercycles" is often presented as atomically flat δ-doped layers, in reality a broadening of the Al-dopant layers is observed with a full-width-half-maximum of ∼2 nm. In addition, an enrichment of the Al at grain boundaries is observed. The low doping efficiency for local Al densities > ∼1 nm -3 can be ascribed to the Al solubility limit in ZnO and to the suppression of the ionization of Al dopants from adjacent Al donors.

  15. Dopant Distribution in Atomic Layer Deposited ZnO:Al Films Visualized by Transmission Electron Microscopy and Atom Probe Tomography

    Science.gov (United States)

    2018-01-01

    The maximum conductivity achievable in Al-doped ZnO thin films prepared by atomic layer deposition (ALD) is limited by the low doping efficiency of Al. To better understand the limiting factors for the doping efficiency, the three-dimensional distribution of Al atoms in the ZnO host material matrix has been examined on the atomic scale using a combination of high-resolution transmission electron microscopy (TEM) and atom probe tomography (APT). Although the Al distribution in ZnO films prepared by so-called “ALD supercycles” is often presented as atomically flat δ-doped layers, in reality a broadening of the Al-dopant layers is observed with a full-width–half-maximum of ∼2 nm. In addition, an enrichment of the Al at grain boundaries is observed. The low doping efficiency for local Al densities > ∼1 nm–3 can be ascribed to the Al solubility limit in ZnO and to the suppression of the ionization of Al dopants from adjacent Al donors.

  16. Test Particle Simulations of Electron Injection by the Bursty Bulk Flows (BBFs) using High Resolution Lyon-Feddor-Mobarry (LFM) Code

    Science.gov (United States)

    Eshetu, W. W.; Lyon, J.; Wiltberger, M. J.; Hudson, M. K.

    2017-12-01

    Test particle simulations of electron injection by the bursty bulk flows (BBFs) have been done using a test particle tracer code [1], and the output fields of the Lyon-Feddor-Mobarry global magnetohydro- dynamics (MHD) code[2]. The MHD code was run with high resolu- tion (oct resolution), and with specified solar wind conditions so as to reproduce the observed qualitative picture of the BBFs [3]. Test par- ticles were injected so that they interact with earthward propagating BBFs. The result of the simulation shows that electrons are pushed ahead of the BBFs and accelerated into the inner magnetosphere. Once electrons are in the inner magnetosphere they are further energized by drift resonance with the azimuthal electric field. In addition pitch angle scattering of electrons resulting in the violation conservation of the first adiabatic invariant has been observed. The violation of the first adiabatic invariant occurs as electrons cross a weak magnetic field region with a strong gradient of the field perturbed by the BBFs. References 1. Kress, B. T., Hudson,M. K., Looper, M. D. , Albert, J., Lyon, J. G., and Goodrich, C. C. (2007), Global MHD test particle simulations of ¿ 10 MeV radiation belt electrons during storm sudden commencement, J. Geophys. Res., 112, A09215, doi:10.1029/2006JA012218. Lyon,J. G., Fedder, J. A., and Mobarry, C.M., The Lyon- Fedder-Mobarry (LFM) Global MHD Magnetospheric Simulation Code (2004), J. Atm. And Solar-Terrestrial Phys., 66, Issue 15-16, 1333- 1350,doi:10.1016/j.jastp. Wiltberger, Merkin, M., Lyon, J. G., and Ohtani, S. (2015), High-resolution global magnetohydrodynamic simulation of bursty bulk flows, J. Geophys. Res. Space Physics, 120, 45554566, doi:10.1002/2015JA021080.

  17. Modeling and analysis of HTM-free perovskite solar cells based on ZnO electron transport layer

    Science.gov (United States)

    Lin, Lingyan; Jiang, Linqin; Qiu, Yu; Yu, Yunlong

    2017-04-01

    On the road towards high-efficiency and low-cost photovoltaic technology, perovskite solar cells (PSCs) emerge as the most promising candidate. Their application is, however, limited by the expensive hole transport material(HTM) and electrode material (e.g. spiro-OMeTAD and gold) and the high-temperature processed electron transport layer (e.g. TiO2) in the common device structure. In this paper, device modeling of HTM free perovskite solar cells having the structure of FTO/ZnO/CH3NH3PbI3/carbon is performed. Various factors that influence the solar cell performance have been investigated, such as doping concentration and thickness of CH3NH3PbI3 absorber layer, the interface defect density and work function of the back contact (φ). The reasonable thickness of CH3NH3PbI3 absorber is around 500 nm. The doping concentrations in the CH3NH3PbI3 layer significantly affect the electron potential barrier height at the junction interface. Meanwhile, to achieve high photovoltaic performance, the defect densities at the CH3NH3PbI3/ZnO interface should be controlled under the order of ∼1017 cm-3 by interface modification. Finally, the φ matching is a requirement to obtain high device performance. We found that an efficiency over 15% can be obtained under the moderate simulation conditions. Moreover, the conversion efficiency of 18.11% can be obtained when the doping concentration of absorber is improved to 1016 cm-3. These findings will provide important guidelines for the manufacturing of low-temperature low-cost perovskite solar cells.

  18. Crystal structure stability and electronic properties of the layered nickelate La4Ni3O10

    Science.gov (United States)

    Puggioni, Danilo; Rondinelli, James M.

    2018-03-01

    We investigate the crystal structure and the electronic properties of the trilayer nickelate La4Ni3O10 by means of quantum-mechanical calculations in the framework of the density-functional theory. We find that, at low temperature, La4Ni3O10 undergoes a hitherto unreported structural phase transition and transforms to a new monoclinic P 21/a phase. This phase exhibits electronic properties in agreement with recent angle-resolved photoemission spectroscopy data reported in H. Li et al., [Nat. Commun. 8, 704 (2017), 10.1038/s41467-017-00777-0] and should be considered in models focused on explaining the observed ˜140 K metal-to-metal phase transition.

  19. Tribological Behavior of Coating Cr Layer on 40Cr after Surface Electron Beam Pretreatment

    Science.gov (United States)

    Hu, J. J.; Wang, J.; Jiang, P.; Xu, H. B.; Li, H.; Hou, T. F.

    2017-12-01

    In this study,the friction and wear behavior of PVD coatings which were treated by 5 different processes,based on gear material-40Cr. Analyzing the effects of treating the gear material with electron beam in combination with magnetron sputtering on it,for dry friction and wear properties.The result showed that the electron beam pretreated substrate was useful to improve the tribological performance of coating material.Furthermore, the surface roughness of coating, the bonding force between substrate and coating as well as the load are the main factors affecting the tribological performance of this coating. Most importantly, the contribution of plowing effect on friction coefficient should be considered when the surface roughness is high.

  20. Microscopic Electronic and Mechanical Properties of Ultra-Thin Layered Materials

    Science.gov (United States)

    2016-07-25

    state emerges in the presence of a magnetic field. Finally, semiconducting transition metal dichalcogenides grown by metal organic chemical vapor... semiconducting transition metal dichalcogenides grown by metal organic chemical vapor deposition were studied and their atomic and electronic quality...currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ORGANIZATION . 1. REPORT DATE (DD-MM-YYYY) 25-07-2016 4. TITLE AND

  1. Ionospheric electron content within the equatorial F2 layer anomaly belt

    International Nuclear Information System (INIS)

    Rastogi, R.G.; Klobuchar, J.A.

    1990-01-01

    This paper describes some new results on the day-to-day behavior of the location of the equatorial anomaly in the columnar electron content. The measurements were made from a unique network of stations covering dip latitudes from 0 degree N to 25 degree N during the period in 1975-1976 near sunspot minimum when the ATS 67 satellite was visible from India. The latitudinal distribution of the total electron content on a particular day was found to depend only on the strength of the electrojet current, as determined by the difference of the horizontal magnetic field at stations on the magnetic equator and another outside the equatorial electrojet, rather than on the horizontal magnetic field measured only at the equatorial station. During magnetically disturbed periods the presence or absence of the anomaly was also found to depend only upon the strength of the electrojet current. The varying electrojet current, that is, the equatorial electric field, is very effective in moving the ionization to the anomaly latitudes of 15 degree-20 degree, but the columnar electron content over the magnetic equator remains relatively constant

  2. Self-organized multi-layered graphene-boron-doped diamond hybrid nanowalls for high-performance electron emission devices.

    Science.gov (United States)

    Sankaran, Kamatchi Jothiramalingam; Ficek, Mateusz; Kunuku, Srinivasu; Panda, Kalpataru; Yeh, Chien-Jui; Park, Jeong Young; Sawczak, Miroslaw; Michałowski, Paweł Piotr; Leou, Keh-Chyang; Bogdanowicz, Robert; Lin, I-Nan; Haenen, Ken

    2018-01-18

    Carbon nanomaterials such as nanotubes, nanoflakes/nanowalls, and graphene have been used as electron sources due to their superior field electron emission (FEE) characteristics. However, these materials show poor stability and short lifetimes, which prevent their use in practical device applications. The aim of this study was to find an innovative nanomaterial possessing both high robustness and reliable FEE behavior. Herein, a hybrid structure of self-organized multi-layered graphene (MLG)-boron doped diamond (BDD) nanowall materials with superior FEE characteristics was successfully synthesized using a microwave plasma enhanced chemical vapor deposition process. Transmission electron microscopy reveals that the as-prepared carbon clusters have a uniform, dense, and sharp nanowall morphology with sp 3 diamond cores encased by an sp 2 MLG shell. Detailed nanoscale investigations conducted using peak force-controlled tunneling atomic force microscopy show that each of the core-shell structured carbon cluster fields emits electrons equally well. The MLG-BDD nanowall materials show a low turn-on field of 2.4 V μm -1 , a high emission current density of 4.2 mA cm -2 at an applied field of 4.0 V μm -1 , a large field enhancement factor of 4500, and prominently high lifetime stability (lasting for 700 min), which demonstrate the superiority of these materials over other hybrid nanostructured materials. The potential of these MLG-BDD hybrid nanowall materials in practical device applications was further illustrated by the plasma illumination behavior of a microplasma device with these materials as the cathode, where a low threshold voltage of 330 V (low threshold field of 330 V mm -1 ) and long plasma stability of 358 min were demonstrated. The fabrication of these hybrid nanowalls is straight forward and thereby opens up a pathway for the advancement of next-generation cathode materials for high brightness electron emission and microplasma-based display devices.

  3. Probing temperature gradients within the GaN buffer layer of AlGaN/GaN high electron mobility transistors with Raman thermography

    International Nuclear Information System (INIS)

    Hodges, C.; Pomeroy, J.; Kuball, M.

    2014-01-01

    We demonstrate the ability of confocal Raman thermography using a spatial filter and azimuthal polarization to probe vertical temperature gradients within the GaN buffer layer of operating AlGaN/GaN high electron mobility transistors. Temperature gradients in the GaN layer are measured by using offset focal planes to minimize the contribution from different regions of the GaN buffer. The measured temperature gradient is in good agreement with a thermal simulation treating the GaN thermal conductivity as homogeneous throughout the layer and including a low thermal conductivity nucleation layer to model the heat flow between the buffer and substrate

  4. Probing temperature gradients within the GaN buffer layer of AlGaN/GaN high electron mobility transistors with Raman thermography

    Energy Technology Data Exchange (ETDEWEB)

    Hodges, C., E-mail: chris.hodges@bristol.ac.uk; Pomeroy, J.; Kuball, M. [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom)

    2014-02-14

    We demonstrate the ability of confocal Raman thermography using a spatial filter and azimuthal polarization to probe vertical temperature gradients within the GaN buffer layer of operating AlGaN/GaN high electron mobility transistors. Temperature gradients in the GaN layer are measured by using offset focal planes to minimize the contribution from different regions of the GaN buffer. The measured temperature gradient is in good agreement with a thermal simulation treating the GaN thermal conductivity as homogeneous throughout the layer and including a low thermal conductivity nucleation layer to model the heat flow between the buffer and substrate.

  5. Desorption of cryogenic layers of the solid hydrogens by electron bombardment

    DEFF Research Database (Denmark)

    Schou, Jørgen; Tratnik, Herbert; Thestrup Nielsen, Birgitte

    2008-01-01

    For solid hydrogenic films in the thickness range from similar to 50 ML to similar to 500 ML the desorption yield falls off inversely proportional to the thickness for both H-2 and D-2 films. This behavior is common for data obtained at CERN for solid H-2 and at Riso National Laboratory for solid D...... thicknesses that greatly exceed the electron mean penetration depth evaluated from uniform films, may be explained by nonuniform growth of the hydrogen films on the metal substrate. (C) 2008 Elsevier B.V. All rights reserved....

  6. Effects of buried high-Z layers on fast electron propagation

    Czech Academy of Sciences Publication Activity Database

    Yang, X.; Xu, H.; Zhuo, H.; Ma, Y.; Shao, F.; Yin, Y.; Borghesi, Marco

    2014-01-01

    Roč. 68, č. 2 (2014), s. 1-7 ISSN 1434-6060 R&D Projects: GA MŠk ED1.1.00/02.0061; GA MŠk EE2.3.20.0279 Grant - others:ELI Beamlines(XE) CZ.1.05/1.1.00/02.0061; LaserZdroj (OP VK 3)(XE) CZ.1.07/2.3.00/20.0279 Institutional support: RVO:68378271 Keywords : laser-plasma interactions * short-pulse * hot-electrons * solid targets * transport * field Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 1.228, year: 2014

  7. Dispersion of a layered electron gas with nearest neighbour-tunneling

    International Nuclear Information System (INIS)

    Miesenboeck, H.M.

    1988-09-01

    The dispersion of the first plasmon band is calculated within the Random Phase Approximation for a superlattice of two-dimensional electron-gases, mutually interacting, and with nearest neighbour hopping between the planes. It is further shown that the deviations of this dispersion from the one in systems with zero interplane motion are very small in commonly realized experimental situations and that they are expected to be observable only in samples with plane distances of 100A and less. (author). 15 refs, 3 figs, 1 tab

  8. The Electronic and Optical Properties of Au Doped Single-Layer Phosphorene

    Science.gov (United States)

    Zhu, Ziqing; Chen, Changpeng; Liu, Jiayi; Han, Lu

    2018-01-01

    The electronic properties and optical properties of single and double Au-doped phosphorene have been comparatively investigated using the first-principles plane-wave pseudopotential method based on density functional theory. The decrease from direct band gap 0.78 eV to indirect band gap 0.22 and 0.11 eV are observed in the single and double Au-doped phosphorene, respectively. The red shifts of absorbing edge occur in both doped systems, which consequently enhance the absorbing of infrared light in phosphorene. Band gap engineering can, therefore, be used to directly tune the optical absorption of phosphorene system by substitutional Au doping.

  9. Controllable high-quality electron beam generation by phase slippage effect in layered targets

    Czech Academy of Sciences Publication Activity Database

    Yu, Q.; Gu, Yanjun; Li, X.F.; Huang, S.; Zhang, F.; Kong, O.; Ma, Y.Y.; Kawata, S.

    2014-01-01

    Roč. 21, č. 11 (2014), "113106-1"-"113106-6" ISSN 1070-664X R&D Projects: GA MŠk ED1.1.00/02.0061; GA MŠk EE2.3.20.0279 Grant - others:ELI Beamlines(XE) CZ.1.05/1.1.00/02.0061; LaserZdroj (OP VK 3)(XE) CZ.1.07/2.3.00/20.0279 Institutional support: RVO:68378271 Keywords : laser * plasma * electrons Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 2.142, year: 2014

  10. Electronic evidence of an insulator-superconductor crossover in single-layer FeSe/SrTiO3 films.

    Science.gov (United States)

    He, Junfeng; Liu, Xu; Zhang, Wenhao; Zhao, Lin; Liu, Defa; He, Shaolong; Mou, Daixiang; Li, Fangsen; Tang, Chenjia; Li, Zhi; Wang, Lili; Peng, Yingying; Liu, Yan; Chen, Chaoyu; Yu, Li; Liu, Guodong; Dong, Xiaoli; Zhang, Jun; Chen, Chuangtian; Xu, Zuyan; Chen, Xi; Ma, Xucun; Xue, Qikun; Zhou, X J

    2014-12-30

    In high-temperature cuprate superconductors, it is now generally agreed that superconductivity is realized by doping an antiferromagnetic Mott (charge transfer) insulator. The doping-induced insulator-to-superconductor transition has been widely observed in cuprates, which provides important information for understanding the superconductivity mechanism. In the iron-based superconductors, however, the parent compound is mostly antiferromagnetic bad metal, raising a debate on whether an appropriate starting point should go with an itinerant picture or a localized picture. No evidence of doping-induced insulator-superconductor transition (or crossover) has been reported in the iron-based compounds so far. Here, we report an electronic evidence of an insulator-superconductor crossover observed in the single-layer FeSe film grown on a SrTiO3 substrate. By taking angle-resolved photoemission measurements on the electronic structure and energy gap, we have identified a clear evolution of an insulator to a superconductor with increasing carrier concentration. In particular, the insulator-superconductor crossover in FeSe/SrTiO3 film exhibits similar behaviors to that observed in the cuprate superconductors. Our results suggest that the observed insulator-superconductor crossover may be associated with the two-dimensionality that enhances electron localization or correlation. The reduced dimensionality and the interfacial effect provide a new pathway in searching for new phenomena and novel superconductors with a high transition temperature.

  11. Electronic evidence of an insulator–superconductor crossover in single-layer FeSe/SrTiO3 films

    Science.gov (United States)

    He, Junfeng; Liu, Xu; Zhang, Wenhao; Zhao, Lin; Liu, Defa; He, Shaolong; Mou, Daixiang; Li, Fangsen; Tang, Chenjia; Li, Zhi; Wang, Lili; Peng, Yingying; Liu, Yan; Chen, Chaoyu; Yu, Li; Liu, Guodong; Dong, Xiaoli; Zhang, Jun; Chen, Chuangtian; Xu, Zuyan; Chen, Xi; Ma, Xucun; Xue, Qikun; Zhou, X. J.

    2014-01-01

    In high-temperature cuprate superconductors, it is now generally agreed that superconductivity is realized by doping an antiferromagnetic Mott (charge transfer) insulator. The doping-induced insulator-to-superconductor transition has been widely observed in cuprates, which provides important information for understanding the superconductivity mechanism. In the iron-based superconductors, however, the parent compound is mostly antiferromagnetic bad metal, raising a debate on whether an appropriate starting point should go with an itinerant picture or a localized picture. No evidence of doping-induced insulator–superconductor transition (or crossover) has been reported in the iron-based compounds so far. Here, we report an electronic evidence of an insulator–superconductor crossover observed in the single-layer FeSe film grown on a SrTiO3 substrate. By taking angle-resolved photoemission measurements on the electronic structure and energy gap, we have identified a clear evolution of an insulator to a superconductor with increasing carrier concentration. In particular, the insulator–superconductor crossover in FeSe/SrTiO3 film exhibits similar behaviors to that observed in the cuprate superconductors. Our results suggest that the observed insulator–superconductor crossover may be associated with the two-dimensionality that enhances electron localization or correlation. The reduced dimensionality and the interfacial effect provide a new pathway in searching for new phenomena and novel superconductors with a high transition temperature. PMID:25502774

  12. Electronic structure and magnetism of layered compounds SrBO2 (B = Ni, Co, Mn): A theoretical investigation

    Science.gov (United States)

    Rahman, Mavlanjan; Zhou, Ke-Chao; Nie, Yao-Zhuang; Guo, Guang-Hua

    2017-10-01

    We investigate the electronic structure and magnetic properties of layered compounds SrBO2 (B = Co, Ni, Mn) based on first principles calculations in the framework of density functional theory with GGA+U method. We compute the phonon dispersion of these compounds to probe the dynamical stability and find that all the compounds are dynamically stable. SrCoO2 and SrNiO2 are G-type antiferromagnetic insulators, and SrMnO2 is an A-type antiferromagnetic conductor. The electronic configurations of 3d orbitals are (dxz)2(dz2)2(dyz)1(dxy)1(dx2-y2)1 and (dxz)2(dyz)2(dz2)2(dxy)1(dx2-y2)1 in SrCoO2 and SrNiO2, respectively. SrCoO2 shows a Jahn-Teller distortion (a>b) because the down-spin Co 3d electron occupies the degenerate (dxz, dyz) levels. Using Monte Carlo simulations based on the Heisenberg model with exchange parameters obtained from first principles calculations, we obtain the Néel temperatures (TN) of SrCoO2 and SrNiO2, which are 249 K and 85 K, respectively.

  13. Capillary-Driven Transport of Dissolved Salt to the Drying Zone During CO2 Injection in Homogeneous and Layered Porous Media

    NARCIS (Netherlands)

    Roels, S.M.; El Chatib, N.; Nicolaides, C.; Zitha, P.L.J.

    2016-01-01

    A major challenge of CO2 injection into saline aquifers is the risk of formation clogging due to salt precipitation. Capillary-driven flow of brine can provide a continuous transport of dissolved salt toward the dry zone around the injection well where it ultimately precipitates due to evaporation.

  14. Structures, Energetics, and Electronic Properties of Layered Materials and Nanotubes of Cadmium Chalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Jia [ORNL; Huang, Jingsong [ORNL; Sumpter, Bobby G [ORNL; Kent, Paul R [ORNL; Terrones Maldonado, Mauricio [ORNL; Smith, Sean C [ORNL

    2013-01-01

    The attractive optoelectronic properties of conducting polymers depend sensitively upon intra- and inter-polymer chain interactions, and therefore new methods to manipulate these interactions are continually being pursued. Here, we report a study of the isotopic effects of deuterium substitution on the structure, morphology, and optoelectronic properties of regioregular poly(3-hexylthiophene)s (P3HT) with an approach that combines the synthesis of deuterated materials, optoelectronic properties measurements, theoretical simulation, and neutron scattering. Selective substitutions of deuterium on the backbone or side-chains of P3HT result in distinct optoelectronic responses in P3HT/[6,6]-phenyl-C61-butyric acid methyl ester (PCBM) photovoltaics. Specifically, the weak non-covalent intermolecular interactions induced by the main-chain deuteration are shown to change the film crystallinity and morphology of P3HT/PCBM blends, and consequently reduce the short circuit current. However, decreased electronic coupling, the formation of a charge transfer state, and increased electron-phonon coupling resulting from side chain deuteration are shown to induce a remarkable reduction in open circuit voltage.

  15. Thermal equilibrium and prehydration processes of electrons injected into liquid water calculated by dynamic Monte Carlo method

    International Nuclear Information System (INIS)

    Kai, Takeshi; Yokoya, Akinari; Ukai, Masatoshi; Fujii, Kentaro; Watanabe, Ritsuko

    2015-01-01

    The thermalization length and spatial distribution of electrons in liquid water were simulated for initial electron energies ranging from 0.1 eV to 100 keV using a dynamic Monte Carlo code. The results showed that electrons were decelerated for thermalization over a longer time period than was previously predicted. This long thermalization time significantly contributed to the series of processes from initial ionization to hydration. We further studied the particular deceleration process of electrons at an incident energy of 1 eV, focusing on the temporal evolution of total track length, mean traveling distance, and energy distributions of decelerating electrons. The initial prehydration time and thermalization periods were estimated to be approximately 50 and 220 fs, respectively, indicating that the initial prehydration began before or contemporaneously with the thermal equilibrium. Based on these results, the prehydrated electrons were suggested to play an important role during multiple DNA damage induction. - Highlights: • Electron deceleration process in liquid water was calculated. • Thermalization lengths calculated is consistent with previously experimental ones. • Initial prehydration may begin contemporaneously with the thermal equilibrium

  16. Electronic passivation of silicon surfaces by thin films of atomic layer deposited gallium oxide

    International Nuclear Information System (INIS)

    Allen, T. G.; Cuevas, A.

    2014-01-01

    This paper proposes the application of gallium oxide (Ga 2 O 3 ) thin films to crystalline silicon solar cells. Effective passivation of n- and p-type crystalline silicon surfaces has been achieved by the application of very thin Ga 2 O 3 films prepared by atomic layer deposition using trimethylgallium (TMGa) and ozone (O 3 ) as the reactants. Surface recombination velocities as low as 6.1 cm/s have been recorded with films less than 4.5 nm thick. A range of deposition parameters has been explored, with growth rates of approximately 0.2 Å/cycle providing optimum passivation. The thermal activation energy for passivation of the Si-Ga 2 O 3 interface has been found to be approximately 0.5 eV. Depassivation of the interface was observed for prolonged annealing at increased temperatures. The activation energy for depassivation was measured to be 1.9 eV.

  17. Variable range hopping in TiO2 insulating layers for oxide electronic devices

    Directory of Open Access Journals (Sweden)

    Y. L. Zhao

    2012-03-01

    Full Text Available TiO2 thin films are of importance in oxide electronics, e.g., Pt/TiO2/Pt for memristors and Co-TiO2/TiO2/Co-TiO2 for spin tunneling devices. When such structures are deposited at a variety of oxygen pressures, how does TiO2 behave as an insulator? We report the discovery of an anomalous resistivity minimum in a TiO2 film at low pressure (not strongly dependent on deposition temperature. Hall measurements rule out band transport and in most of the pressure range the transport is variable range hopping (VRH though below 20 K it was difficult to differentiate between Mott and Efros-Shklovskii's (ES mechanism. Magnetoresistance (MR of the sample with lowest resistivity was positive at low temperature (for VRH but negative above 10 K indicating quantum interference effects.

  18. Efficient Planar Perovskite Solar Cells with Reduced Hysteresis and Enhanced Open Circuit Voltage by Using PW12-TiO2 as Electron Transport Layer.

    Science.gov (United States)

    Huang, Chun; Liu, Canjun; Di, Yunxiang; Li, Wenzhang; Liu, Fangyang; Jiang, Liangxing; Li, Jie; Hao, Xiaojing; Huang, Haitao

    2016-04-06

    An electron transport layer is essential for effective operation of planar perovskite solar cells. In this Article, PW12-TiO2 composite was used as the electron transport layer for the planar perovskite solar cell in the device structure of fluorine-doped tin oxide (FTO)-glass/PW12-TiO2/perovskite/spiro-OMeTAD/Au. A proper downward shift of the conduction band minimum (CBM) enhanced electron extraction from the perovskite layer to the PW12-TiO2 composite layer. Consequently, the common hysteresis effect in TiO2-based planar perovskite solar cells was significantly reduced and the open circuit voltage was greatly increased to about 1.1 V. Perovskite solar cells using the PW12-TiO2 compact layer showed an efficiency of 15.45%. This work can contribute to the studies on the electron transport layer and interface engineering for the further development of perovskite solar cells.

  19. Electron Beam Lithography Using Highly Sensitive Negative Type of Plant-Based Resist Material Derived from Biomass on Hardmask Layer

    Science.gov (United States)

    Takei, Satoshi; Oshima, Akihiro; Sekiguchi, Atsushi; Yanamori, Naomi; Kashiwakura, Miki; Kozawa, Takahiro; Tagawa, Seiichi

    2011-10-01

    We investigated electron beam (EB) lithography using a novel highly sensitive negative type of plant-based resist material derived from biomass on a hardmask layer for trilayer processes. The chemical design concept for using the plant-based resist material with glucose and dextrin derivatives was first demonstrated in the EB lithography. The 1 µm line patterning images with highly efficient crosslinking properties and low film thickness shrinkage were provided under specific process conditions of EB lithography. The results shown reveal that the alpha-linked disaccharide formed by a 1,1-glucoside bond between two glucose units in dextrin derivatives was an important factor in controlling the highly sensitive EB patterning and developer properties.

  20. Thermally Stable Mesoporous Perovskite Solar Cells Incorporating Low-Temperature Processed Graphene/Polymer Electron Transporting Layer.

    Science.gov (United States)

    Tong, Shi Wun; Balapanuru, Janardhan; Fu, Deyi; Loh, Kian Ping

    2016-11-02

    In the short time since its discovery, perovskite solar cells (PSCs) have attained high power conversion efficiency but their lack of thermal stability remains a barrier to commercialization. Among the experimentally accessible parameter spaces for optimizing performance, identifying an electron transport layer (ETL) that forms a thermally stable interface with perovskite and which is solution-processable at low-temperature will certainly be advantageous. Herein, we developed a mesoporous graphene/polymer composite with these advantages when used as ETL in CH 3 NH 3 PbI 3 PSCs, and a high efficiency of 13.8% under AM 1.5G solar illumination could be obtained. Due to the high heat transmission coefficient and low isoelectric point of mesoporous graphene-based ETL, the PSC device enjoys good chemical and thermal stability. Our work demonstrates that the mesoporous graphene-based scaffold is a promising ETL candidate for high performance and thermally stable PSCs.