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Sample records for electron impurity doped

  1. Spin polarization of electrons in a magnetic impurity doped ...

    Indian Academy of Sciences (India)

    Abstract. A theoretical model is presented in this paper for degree of spin polarization in a light emitting diode (LED) whose epitaxial region contains quantum dots doped with magnetic impurity. The model is then used to investigate the effect of electron–phonon interaction on degree of spin polarization at different ...

  2. Spin polarization of electrons in a magnetic impurity doped ...

    Indian Academy of Sciences (India)

    A theoretical model is presented in this paper for degree of spin polarization in alight emitting diode (LED) whose epitaxial region contains quantum dots doped with magnetic impurity. The model is then used to investigate the effect of electron–phonon interaction on degree of spin polarization at different temperatures and ...

  3. A computational study on tuning the field emission and electronic properties of BN nanocones by impurity atom doping

    Science.gov (United States)

    Ahmadi, S.; Delir Kheirollahi Nezhad, P.; Hosseinian, A.; Vessally, E.

    2018-06-01

    We have inspected the effect of substituting a boron or nitrogen atom of a BN nanocone (BNNC) by two impurity atoms with lower and higher atomic numbers based on the density functional theory calculations. Our results explain the experimental observations in a molecular level. Orbital and partial density of states analyses show that the doping processes increase the electrical conductivity by creating new states within the gap of BNNC as follows: BeB > ON > CB > CN. The electron emission current from the surface of BNNC is improved after the CB and BeB dopings, and it is decreased by CN and ON dopings. The BeB and CN dopings make the BNNC a p-type semiconductor and the CB and ON dopings make it an n-type one in good agreement with the experimental results. The ON and BeB doping processes are suggested for the field emission current, and electrical conductivity enhancement, respectively.

  4. Impurity doping processes in silicon

    CERN Document Server

    Wang, FFY

    1981-01-01

    This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many texts, this work describes the double-diffusion method.

  5. Density of Electronic States in Impurity-Doped Quantum Well Wires

    Science.gov (United States)

    Sierra-Ortega, J.; Mikhailov, I. D.

    2003-03-01

    We analyze the electronic states in a cylindrical quantum well-wire (QWW) with randomly distributed neutral, D^0 and negatively charged D^- donors. In order to calculate the ground state energies of the off-center donors D^0 and D^- as a function of the distance from the axis of the QWW, we use the recently developed fractal dimension method [1]. There the problems are reduced to those similar for a hydrogen-like atom and a negative-hydrogen-like ion respectively, in an isotropic effective space with variable fractional dimension. The numerical trigonometric sweep method [2] and the three-parameter Hylleraas-type trial function are used to solve these problems. Novel curves for the density of impurity states in cylindrical QWWs with square-well, parabolic and soft-edge barrier potentials are present. Additionally we analyze the effect of the repulsive core on the density of the impurity states. [1] I.D. Mikhailov, F. J. Betancur, R. Escorcia and J. Sierra-Ortega, Phys. Stat. Sol., 234(b), 590 (2002) [2] F. J. Betancur, I. D. Mikhailov and L. E. Oliveira, J. Appl. Phys. D, 31, 3391(1998)

  6. The electronic, magnetic and optical properties of ZnO doped with doubles impurities (Cr, Fe): An LDA-SIC and Monte Carlo study

    Energy Technology Data Exchange (ETDEWEB)

    Salmani, El Mehdi, E-mail: elmehdisalmani@gmail.com [LMPHE, Faculté des Sciences, Université Mohammed V, Rabat (Morocco); Laghrissi, Ayoub; Lamouri, Rachida; Ez-Zahraouy, Hamid [LMPHE, Faculté des Sciences, Université Mohammed V, Rabat (Morocco); Benyoussef, Abdelilah [Institute for Nanomaterials and Nanotechnologies, MAScIR, Rabat (Morocco); Académie Hassan II des Sciences et Techniques, Rabat (Morocco)

    2017-01-15

    Electronic structure, magnetic and optical properties of ZnO doped with single and double impurities Zn{sub 1−x}Cr{sub x}O, Zn{sub 1−x}Fe{sub x}O, and Zn{sub 1−2x}Cr{sub x}Fe{sub x}O (x=0.03 and 0.06) are investigated using first-principles calculations. Based on the Korringa–Kohn–Rostoker method combined with the coherent potential approximation, we investigated the half-metallic ferromagnetic behavior of doubles impurities (Cr, Fe) doped ZnO. To support our results, we apply the self-interaction-corrected local density approximation (SIC-LDA) to study the electronic structure, optical and magnetic properties of Co-doped ZnO with doubles impurities (Cr, Fe) showing that the half-metallic ferromagnetic state still persists. The stability of the ferromagnetic state compared with the spin-glass state is investigated by comparing their total energies. The exchange interactions obtained from first principle calculations and used in a classical Ising model by a Monte Carlo approach resulted in ferromagnetic states with high Neel temperature. - Highlights: • The electronic structure calculations for ZnO doped with doubles impurities (Cr, Fe) have been discussed. • The half-metallic aspect was proven to take place for doubles impurities (Cr, Fe) codoped ZnO. • The doubles impurities (Cr, Fe)impurities are shown to introduce the necessary magnetic moment that makes ZnO good candidates for spintronic applications.

  7. Spatial correlation effects in the charged impurity distribution on the electronic properties of δ-doped structures

    NARCIS (Netherlands)

    Stadt, van de A.F.W.; Koenraad, P.M.; Shi, J.M.; Wolter, J.H.; Devreese, J.T.

    2003-01-01

    In this paper we will show that the -doped GaAs/AlGaAs/GaAs quantum barrier is an ideal system to study deep centers in narrow doping layers with high doping density. By varying the Al content in the barrier, the distance between the Fermi-level and the deep level can be tuned and therefore the

  8. Impurity doping effects on the orbital thermodynamic properties of hydrogenated graphene, graphane, in Harrison model

    Science.gov (United States)

    Yarmohammadi, Mohsen

    2016-12-01

    Using the Harrison model and Green's function technique, impurity doping effects on the orbital density of states (DOS), electronic heat capacity (EHC) and magnetic susceptibility (MS) of a monolayer hydrogenated graphene, chair-like graphane, are investigated. The effect of scattering between electrons and dilute charged impurities is discussed in terms of the self-consistent Born approximation. Our results show that the graphane is a semiconductor and its band gap decreases with impurity. As a remarkable point, comparatively EHC reaches almost linearly to Schottky anomaly and does not change at low temperatures in the presence of impurity. Generally, EHC and MS increases with impurity doping. Surprisingly, impurity doping only affects the salient behavior of py orbital contribution of carbon atoms due to the symmetry breaking.

  9. Discrete impurity band from surface danging bonds in nitrogen and phosphorus doped SiC nanowires

    Science.gov (United States)

    Li, Yan-Jing; Li, Shu-Long; Gong, Pei; Li, Ya-Lin; Cao, Mao-Sheng; Fang, Xiao-Yong

    2018-04-01

    The electronic structure and optical properties of the nitrogen and phosphorus doped silicon carbide nanowires (SiCNWs) are investigated using first-principle calculations based on density functional theory. The results show doping can change the type of the band gap and improve the conductivity. However, the doped SiCNWs form a discrete impurity levels at the Fermi energy, and the dispersion degree decreases with the diameter increasing. In order to reveal the root of this phenomenon, we hydrogenated the doped SiCNWs, found that the surface dangling bonds were saturated, and the discrete impurity levels are degeneracy, which indicates that the discrete impurity band of the doped SiCNWs is derived from the dangling bonds. The surface passivation can degenerate the impurity levels. Therefore, both doping and surface passivation can better improve the photoelectric properties of the SiCNWs. The result can provide additional candidates in producing nano-optoelectronic devices.

  10. Geometry and electronic structure of an impurity-trapped exciton in the Cs2GeF6 crystal doped with U4+. The 5f17s1 manifold

    International Nuclear Information System (INIS)

    Ordejon, B.; Seijo, L.; Barandiaran, Z.

    2007-01-01

    Complete text of publication follows: Excitons trapped at impurity centres in highly ionic crystals were first described by McClure and Pedrini [Phys. Rev. B 32, 8465 (1985)] as excited states consisting of a bound electron-hole pair with the hole localized on the impurity and the electron on nearby lattice sites, and a very short impurity-ligand bond length. In this work we present a detailed microscopic characterization of an impurity - trapped exciton in Cs 2 GeF 6 doped with U 4+ . Its electronic structure has been studied by means of CASSCF/CASPT2/SOCI relativistic ab initio model potential (AIMP) embedded-cluster calculations on (UF 6 ) 2- and (UF 6 Cs 8 ) 6+ clusters embedded in Cs 2 GeF 6 . The local geometry of the impurity-trapped exciton, the potential energy curves, and the multi electronic wavefunctions, have been obtained as direct, non-empirical results of the methods. The calculated excited states appear to be significantly delocalized outside the UF 6 volume and their U-F bond length turns out to be very short, closer to that of a pentavalent uranium defect than to that of a tetravalent uranium defect. The wavefunctions of these excited states show a dominant U 5f 1 7s 1 configuration character. This result has never been anticipated by simpler models and reveals the unprecedented ability of diffuse orbitals of f-element impurities to act as electron traps in ionic crystals

  11. Investigation Effects of Magnetetic Impurity Doping on Average Magnetization of Semiconducting Carbon Nanotubes

    Directory of Open Access Journals (Sweden)

    Saeedeh Ghafourian

    2011-01-01

    Full Text Available Single wall carbon nanotubes (SWCNT extensively are attractive from both theoretical and experimental point of view, due to its technological applications such as nano electronics devises. SWCNT are created by rolling a graphen sheet into a cyclindrical form. We have investigated the possibility of making a ferromagnetic semiconductor zigzag SWCNT by doping magnetic impurities. We found by increasing magnetic impurities doping on a zigzag SWCNT, average magnetization is increased and one can make a ferromagnetic semiconductor

  12. Refractometry of TGS crystals doped with L-threonine impurity under uniaxial pressure

    International Nuclear Information System (INIS)

    Stadnyk, V. I.; Kiryk, Yu. I.

    2013-01-01

    The temperature and spectral dependences of the refractive indices of triglycine sulphate (TGS) crystals doped with L-threonine impurity have been investigated. It is established that the introduction of an impurity weakens the temperature dependence of refractive indices. The electronic polarizability, refractions, and parameters of UV oscillators of mechanically deformed impurity crystals are calculated. The temperature coefficients of the phase transition shift are determined

  13. Refractometry of TGS crystals doped with L-threonine impurity under uniaxial pressure

    Energy Technology Data Exchange (ETDEWEB)

    Stadnyk, V. I., E-mail: vasylstadnyk@ukr.net; Kiryk, Yu. I. [Lviv National University (Ukraine)

    2013-07-15

    The temperature and spectral dependences of the refractive indices of triglycine sulphate (TGS) crystals doped with L-threonine impurity have been investigated. It is established that the introduction of an impurity weakens the temperature dependence of refractive indices. The electronic polarizability, refractions, and parameters of UV oscillators of mechanically deformed impurity crystals are calculated. The temperature coefficients of the phase transition shift are determined.

  14. Sublattice asymmetry of impurity doping in graphene: A review

    Directory of Open Access Journals (Sweden)

    James A. Lawlor

    2014-08-01

    Full Text Available In this review we highlight recent theoretical and experimental work on sublattice asymmetric doping of impurities in graphene, with a focus on substitutional nitrogen dopants. It is well known that one current limitation of graphene in regards to its use in electronics is that in its ordinary state it exhibits no band gap. By doping one of its two sublattices preferentially it is possible to not only open such a gap, which can furthermore be tuned through control of the dopant concentration, but in theory produce quasi-ballistic transport of electrons in the undoped sublattice, both important qualities for any graphene device to be used competetively in future technology. We outline current experimental techniques for synthesis of such graphene monolayers and detail theoretical efforts to explain the mechanisms responsible for the effect, before suggesting future research directions in this nascent field.

  15. Impurity effects on electrical conductivity of doped bilayer graphene in the presence of a bias voltage

    International Nuclear Information System (INIS)

    Lotfi, E; Rezania, H; Arghavaninia, B; Yarmohammadi, M

    2016-01-01

    We address the electrical conductivity of bilayer graphene as a function of temperature, impurity concentration, and scattering strength in the presence of a finite bias voltage at finite doping, beginning with a description of the tight-binding model using the linear response theory and Green’s function approach. Our results show a linear behavior at high doping for the case of high bias voltage. The effects of electron doping on the electrical conductivity have been studied via changing the electronic chemical potential. We also discuss and analyze how the bias voltage affects the temperature behavior of the electrical conductivity. Finally, we study the behavior of the electrical conductivity as a function of the impurity concentration and scattering strength for different bias voltages and chemical potentials respectively. The electrical conductivity is found to be monotonically decreasing with impurity scattering strength due to the increased scattering among electrons at higher impurity scattering strength. (paper)

  16. Impurity doping: a novel strategy for controllable synthesis of functional lanthanide nanomaterials.

    Science.gov (United States)

    Chen, Daqin; Wang, Yuansheng

    2013-06-07

    Many technological nanomaterials are intentionally 'doped' by introducing appropriate amounts of foreign elements into hosts to impart electronic, magnetic and optical properties. In fact, impurity doping was recently found to have significant influence on nucleation and growth of many functional nanocrystals (NCs), and provide a fundamental approach to modify the crystallographic phase, size, morphology, and electronic configuration of nanomaterials. In this feature article, we provide an overview of the most recent progresses in doping-induced control of phase structures, sizes, shapes, as well as performances of functional nanomaterials for the first time. Two kinds of impurity doping strategies, including the homo-valence ion doping and hetero-valence ion doping, are discussed in detail. We lay emphases on impurity doping induced modifications of microstructures and optical properties of upconversion (UC) lanthanide (Ln(3+)) NCs, but do not limit to them. In addition, we also illustrate the control of Ln(3+) activator distribution in the core@shell architecture, which has recently provided scientists with new opportunities for designing and tuning the multi-color emissions of Ln(3+)-doped UC NCs. Finally, the challenges and future perspectives of this novel impurity doping strategy are pointed out.

  17. Thermal phonon scattering in silicon doped with Li, P and Li-O; influence of the electronic structure of the impurities

    International Nuclear Information System (INIS)

    Fortier, Dominique.

    1976-07-01

    Besides the three phonon scattering mechanisms generally considered in insulators, i.e. boundary effect, isotopic scattering and phonon-phonon interaction, the electron-phonon scattering mechanism was studied with special reference to the scattering of thermal phonons by donor impurities in silicon. In order to demonstrate clearly the effect of the electronic structure of the impurity on this scattering, three donor centres were investigated: Li, Li-O and P. On the basis of the calculated relaxation times it was possible from theoretical analysis to account for the main results and to explain why the Li centre scatters thermal phonons more efficiently than Li-O and P centres in the isolated impurity range [fr

  18. Superconducting Gap Symmetry of LaFeP(O,F Observed by Impurity Doping Effect

    Directory of Open Access Journals (Sweden)

    Shigeki Miyasaka

    2016-08-01

    Full Text Available We have investigated Mn, Co and Ni substitution effects on polycrystalline samples of LaFePO0.95F0.05 by resistivity and magnetoresistance measurements. In LaFe1-xMxPO0.95F0.05 (M = Mn, Co and Ni, the superconducting transition temperature (Tc monotonously decreases with increasing the impurity doping level of x. There is a clear difference of Tc suppression rates among Mn, Co and Ni doping cases, and the decreasing rate of Tc by Mn doping as a magnetic impurity is larger than those by the nonmagnetic doping impurities (Co/Ni. This result indicates that in LaFePO0.95F0.05, Tc is rapidly suppressed by the pair-breaking effect of magnetic impurities, and the pairing symmetry is a full-gapped s-wave. In the nonmagnetic impurity-doped systems, the residual resistivity in the normal state has nearly the same value when Tc becomes zero. The residual resistivity value is almost consistent with the universal value of sheet resistance for two-dimensional superconductors, suggesting that Tc is suppressed by electron localization in Co/Ni-doped LaFePO0.95F0.05.

  19. Nuclear relaxation in semiconductors doped with magnetic impurities

    International Nuclear Information System (INIS)

    Mel'nichuk, S.V.; Tovstyuk, N.K.

    1984-01-01

    The temperature and concentration dependences are investigated of the nuclear spin-lattice relaxation time with account of spin diffusion for degenerated and non-degenerated semicon- ductors doped with magnetic impurities. In case of the non-degenerated semiconductor the time is shown to grow with temperature, while in case of degenerated semiconductor it is practically independent of temperature. The impurity concentration growth results in decreasing the spin-lattice relaxation time

  20. Flat panel display - Impurity doping technology for flat panel displays

    Energy Technology Data Exchange (ETDEWEB)

    Suzuki, Toshiharu [Advanced Technology Planning, Sumitomo Eaton Nova Corporation, SBS Tower 9F, 10-1, Yoga 4-chome, Setagaya-ku, 158-0097 Tokyo (Japan)]. E-mail: suzuki_tsh@senova.co.jp

    2005-08-01

    Features of the flat panel displays (FPDs) such as liquid crystal display (LCD) and organic light emitting diode (OLED) display, etc. using low temperature poly-Si (LTPS) thin film transistors (TFTs) are briefly reviewed comparing with other FPDs. The requirements for fabricating TFTs used for high performance FPDs and system on glass (SoG) are addressed. This paper focuses on the impurity doping technology, which is one of the key technologies together with crystallization by laser annealing, formation of high quality gate insulator and gate-insulator/poly-Si interface. The issues to be solved in impurity doping technology for state of the art and future TFTs are clarified.

  1. Flat panel display - Impurity doping technology for flat panel displays

    International Nuclear Information System (INIS)

    Suzuki, Toshiharu

    2005-01-01

    Features of the flat panel displays (FPDs) such as liquid crystal display (LCD) and organic light emitting diode (OLED) display, etc. using low temperature poly-Si (LTPS) thin film transistors (TFTs) are briefly reviewed comparing with other FPDs. The requirements for fabricating TFTs used for high performance FPDs and system on glass (SoG) are addressed. This paper focuses on the impurity doping technology, which is one of the key technologies together with crystallization by laser annealing, formation of high quality gate insulator and gate-insulator/poly-Si interface. The issues to be solved in impurity doping technology for state of the art and future TFTs are clarified

  2. Impurity-doped micro-lasers

    NARCIS (Netherlands)

    Pollnau, Markus

    2013-01-01

    Recently rare-earth-ion-doped dielectric channel waveguides have proven their ability to generate highly efficient laser output in the fundamental mode. Here we review our recent achievements obtained in crystalline potassium double tungstates and amorphous aluminum oxide.

  3. Effect of impurity correlation on the density of states in slightly compensated heavily doped semiconductors

    International Nuclear Information System (INIS)

    Doan Nhat Quang; Nguyen Nhu Dat; Dinh Van An

    1993-07-01

    A theory is developed of the electron density of states (DOS) in slightly compensated heavily doped semiconductors which undergo a thermal treatment. The calculation is carried out within the semiclassical approach to the random impurity field, taking adequately into account high-temperature correlation among the impurities and low temperature screening due to the free carriers as well. Then, a simple analytic expression for the DOS is obtained which exhibits the same energy dependence as in the case of a random impurity distribution, but now with some correlation-induced changes in the coefficients. A numerical estimation on non-compensated n-type sample of GaAs at a doping level of 5 x 10 18 cm -3 shows that in the tail region the correlated DOS turns out to be somewhat larger and cut less sharply than the random one. (author). 45 refs, 2 figs, 1 tab

  4. Magnetic impurity coupled to interacting conduction electrons

    International Nuclear Information System (INIS)

    Schork, T.

    1996-01-01

    We consider a magnetic impurity which interacts by hybridization with a system of weakly correlated electrons and determine the energy of the ground state by means of a 1/N f expansion. The correlations among the conduction electrons are described by a Hubbard Hamiltonian and are treated to the lowest order in the interaction strength. We find that their effect on the Kondo temperature, T K , in the Kondo limit is twofold: first, the position of the impurity level is shifted due to the reduction of charge fluctuations, which reduces T K . Secondly, the bare Kondo exchange coupling is enhanced as spin fluctuations are enlarged. In total, T K increases. Both corrections require intermediate states beyond the standard Varma-Yafet ansatz. This shows that the Hubbard interaction does not just provide quasiparticles, which hybridize with the impurity, but also renormalizes the Kondo coupling. copyright 1996 The American Physical Society

  5. The electronic structure of impurities in semiconductors

    CERN Multimedia

    Nylandsted larsen, A; Svane, A

    2002-01-01

    The electronic structure of isolated substitutional or interstitial impurities in group IV, IV-IV, and III-V compound semiconductors will be studied. Mössbauer spectroscopy will be used to investigate the incorporation of the implanted isotopes on the proper lattice sites. The data can be directly compared to theoretical calculations using the LMTO scheme. Deep level transient spectroscopy will be used to identify the band gap levels introduced by metallic impurities, mainly in Si~and~Si$ _{x}$Ge$_{1-x}$. \\\\ \\\\

  6. Impurity Correction Techniques Applied to Existing Doping Measurements of Impurities in Zinc

    Science.gov (United States)

    Pearce, J. V.; Sun, J. P.; Zhang, J. T.; Deng, X. L.

    2017-01-01

    Impurities represent the most significant source of uncertainty in most metal fixed points used for the realization of the International Temperature Scale of 1990 (ITS-90). There are a number of different methods for quantifying the effect of impurities on the freezing temperature of ITS-90 fixed points, many of which rely on an accurate knowledge of the liquidus slope in the limit of low concentration. A key method of determining the liquidus slope is to measure the freezing temperature of a fixed-point material as it is progressively doped with a known amount of impurity. Recently, a series of measurements of the freezing and melting temperature of `slim' Zn fixed-point cells doped with Ag, Fe, Ni, and Pb were presented. Here, additional measurements of the Zn-X system are presented using Ga as a dopant, and the data (Zn-Ag, Zn-Fe, Zn-Ni, Zn-Pb, and Zn-Ga) have been re-analyzed to demonstrate the use of a fitting method based on Scheil solidification which is applied to both melting and freezing curves. In addition, the utility of the Sum of Individual Estimates method is explored with these systems in the context of a recently enhanced database of liquidus slopes of impurities in Zn in the limit of low concentration.

  7. Physical properties of antiferromagnetic Mn doped ZnO samples: Role of impurity phase

    Science.gov (United States)

    Neogi, S. K.; Karmakar, R.; Misra, A. K.; Banerjee, A.; Das, D.; Bandyopadhyay, S.

    2013-11-01

    Structural, morphological, optical, and magnetic properties of nanocrystalline Zn1-xMnxO samples (x=0.01, 0.02, 0.04, 0.06, 0.08 and 0.10) prepared by the sol-gel route are studied by X-ray diffraction (XRD), Scanning electron microscopy (SEM), UV-visible absorption spectroscopy, Superconducting quantum interference device (SQUID) magnetometry and positron annihilation lifetime spectroscopy (PALS). XRD confirms formation of wurzite structure in all the Mn-substituted samples. A systematic increase in lattice constants and decrease in grain size have been observed with increase in manganese doping concentration up to 6 at% in the ZnO structure. An impurity phase (ZnMnO3) has been detected when percentage of Mn concentration is 6 at% or higher. The optical band gap of the Mn-substituted ZnO samples decrease with increase in doping concentration of manganese whereas the width of the localized states increases. The antiferromagnetic exchange interaction is strong in the samples for 2 and 4 at% of Mn doping but it reduces when the doping level increases from 6 at% and further. Positron life time components τ1 and τ2 are found to decrease when concentration of the dopant exceeds 6 at%. The changes in magnetic properties as well as positron annihilation parameters at higher manganese concentration have been assigned as due to the formation of impurity phase. Single phase structure has been observed up to 6 at% of Mn doping. Impurity phase has been developed above 6 at% of Mn doping. Antiferromagnetic and paramagnetic interactions are present in the samples. Defect parameters show sharp fall as Mn concentration above 6 at%. The magnetic and defect properties are modified by the formation of impurity phase.

  8. Physical properties of antiferromagnetic Mn doped ZnO samples: Role of impurity phase

    International Nuclear Information System (INIS)

    Neogi, S.K.; Karmakar, R.; Misra, A.K.; Banerjee, A.; Das, D.; Bandyopadhyay, S.

    2013-01-01

    Structural, morphological, optical, and magnetic properties of nanocrystalline Zn 1−x Mn x O samples (x=0.01, 0.02, 0.04, 0.06, 0.08 and 0.10) prepared by the sol–gel route are studied by X-ray diffraction (XRD), Scanning electron microscopy (SEM), UV–visible absorption spectroscopy, Superconducting quantum interference device (SQUID) magnetometry and positron annihilation lifetime spectroscopy (PALS). XRD confirms formation of wurzite structure in all the Mn-substituted samples. A systematic increase in lattice constants and decrease in grain size have been observed with increase in manganese doping concentration up to 6 at% in the ZnO structure. An impurity phase (ZnMnO 3 ) has been detected when percentage of Mn concentration is 6 at% or higher. The optical band gap of the Mn-substituted ZnO samples decrease with increase in doping concentration of manganese whereas the width of the localized states increases. The antiferromagnetic exchange interaction is strong in the samples for 2 and 4 at% of Mn doping but it reduces when the doping level increases from 6 at% and further. Positron life time components τ 1 and τ 2 are found to decrease when concentration of the dopant exceeds 6 at%. The changes in magnetic properties as well as positron annihilation parameters at higher manganese concentration have been assigned as due to the formation of impurity phase. - highlights: • Single phase structure has been observed up to 6 at% of Mn doping. • Impurity phase has been developed above 6 at% of Mn doping. • Antiferromagnetic and paramagnetic interactions are present in the samples. • Defect parameters show sharp fall as Mn concentration above 6 at%. • The magnetic and defect properties are modified by the formation of impurity phase

  9. Physical properties of antiferromagnetic Mn doped ZnO samples: Role of impurity phase

    Energy Technology Data Exchange (ETDEWEB)

    Neogi, S.K.; Karmakar, R. [Department of Physics, University of Calcutta, 92 A.P.C. Road, Kolkata 700009 (India); Misra, A.K. [UGC DAE Consortium for Scientific Research, Salt Lake, Kolkata 700064 (India); Banerjee, A. [Department of Physics, University of Calcutta, 92 A.P.C. Road, Kolkata 700009 (India); CRNN, University of Calcutta, JD 2, Sector III, Salt Lake, Kolkata 700098 (India); Das, D. [UGC DAE Consortium for Scientific Research, Salt Lake, Kolkata 700064 (India); Bandyopadhyay, S., E-mail: sbaphy@caluniv.ac.in [Department of Physics, University of Calcutta, 92 A.P.C. Road, Kolkata 700009 (India); CRNN, University of Calcutta, JD 2, Sector III, Salt Lake, Kolkata 700098 (India)

    2013-11-15

    Structural, morphological, optical, and magnetic properties of nanocrystalline Zn{sub 1−x}Mn{sub x}O samples (x=0.01, 0.02, 0.04, 0.06, 0.08 and 0.10) prepared by the sol–gel route are studied by X-ray diffraction (XRD), Scanning electron microscopy (SEM), UV–visible absorption spectroscopy, Superconducting quantum interference device (SQUID) magnetometry and positron annihilation lifetime spectroscopy (PALS). XRD confirms formation of wurzite structure in all the Mn-substituted samples. A systematic increase in lattice constants and decrease in grain size have been observed with increase in manganese doping concentration up to 6 at% in the ZnO structure. An impurity phase (ZnMnO{sub 3}) has been detected when percentage of Mn concentration is 6 at% or higher. The optical band gap of the Mn-substituted ZnO samples decrease with increase in doping concentration of manganese whereas the width of the localized states increases. The antiferromagnetic exchange interaction is strong in the samples for 2 and 4 at% of Mn doping but it reduces when the doping level increases from 6 at% and further. Positron life time components τ{sub 1} and τ{sub 2} are found to decrease when concentration of the dopant exceeds 6 at%. The changes in magnetic properties as well as positron annihilation parameters at higher manganese concentration have been assigned as due to the formation of impurity phase. - highlights: • Single phase structure has been observed up to 6 at% of Mn doping. • Impurity phase has been developed above 6 at% of Mn doping. • Antiferromagnetic and paramagnetic interactions are present in the samples. • Defect parameters show sharp fall as Mn concentration above 6 at%. • The magnetic and defect properties are modified by the formation of impurity phase.

  10. Plasmon-enhanced phonon and ionized impurity scattering in doped silicon

    International Nuclear Information System (INIS)

    Chen, Ming-Jer; Hsieh, Shang-Hsun; Chen, Chuan-Li

    2015-01-01

    Historically, two microscopic electron scattering calculation methods have been used to fit macroscopic electron mobility data in n-type silicon. The first method was performed using a static system that included long-range electron-plasmon scattering; however, the well-known Born approximation fails in this case when dealing with electron-impurity scattering. In the second method, sophisticated numerical simulations were developed around plasmon-excited potential fluctuations and successfully reproduced the mobility data at room temperature. In this paper, we propose a third method as an alternative to the first method. First, using a fluctuating system, which was characterized on the basis of our recently experimentally extracted plasmon-excited potential fluctuations, the microscopic calculations reveal enhanced short-range scattering of electrons by phonons and ionized impurities due to increased electron temperature and increased screening length, respectively. The increased hot electron population makes the Born approximation hold, which eases the overall calculation task substantially. Then, we return to the static system while incorporating plasmon-enhanced impurity scattering. The resulting macroscopic electron mobility shows fairly good agreement with data over wide ranges of temperatures (200–400 K) and doping concentrations (10 15 –10 20  cm −3 ). Application of the proposed method to strained silicon is also demonstrated

  11. Effect of suprathermal electrons on the impurity ionization state

    International Nuclear Information System (INIS)

    Ochando, M A; Medina, F; Zurro, B; McCarthy, K J; Pedrosa, M A; Baciero, A; Rapisarda, D; Carmona, J M; Jimenez, D

    2006-01-01

    The effect of electron cyclotron resonance heating induced suprathermal electron tails on the ionization of iron impurities in magnetically confined plasmas is investigated. The behaviour of plasma emissivity immediately after injection provides evidence of a spatially localized 'shift' towards higher charge states of the impurity. Bearing in mind that the non-inductive plasma heating methods generate long lasting non-Maxwellian distribution functions, possible implications on the deduced impurity transport coefficients, when fast electrons are present, are discussed

  12. Study of radioactive impurities in neutron transmutation doped germanium

    Energy Technology Data Exchange (ETDEWEB)

    Mathimalar, S.; Dokania, N.; Singh, V. [India-based Neutrino Observatory, Tata Institute of Fundamental Research, Mumbai 400 005 (India); Homi Bhabha National Institute, Anushaktinagar, Mumbai 400 094 (India); Nanal, V., E-mail: nanal@tifr.res.in [Department of Nuclear and Atomic Physics, Tata Institute of Fundamental Research, Mumbai 400 005 (India); Pillay, R.G. [Department of Nuclear and Atomic Physics, Tata Institute of Fundamental Research, Mumbai 400 005 (India); Shrivastava, A. [Nuclear Physics Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India); Jagadeesan, K.C.; Thakare, S.V. [Isotope Production and Applications Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India)

    2015-02-21

    A program to develop low temperature (mK) sensors with neutron transmutation doped Ge for rare event studies with a cryogenic bolometer has been initiated. For this purpose, semiconductor grade Ge wafers are irradiated with thermal neutron flux from Dhruva reactor at Bhabha Atomic Research Centre (BARC), Mumbai. Spectroscopic studies of irradiated samples have revealed that the environment of the capsule used for irradiating the sample leads to significant levels of {sup 65}Zn, {sup 110m}Ag and {sup 182}Ta impurities, which can be reduced by chemical etching of approximately ∼50μm thick surface layer. From measurements of the etched samples in the low background counting setup, activity due to trace impurities of {sup 123}Sb in bulk Ge is estimated to be ∼1Bq/g after irradiation. These estimates indicate that in order to use the NTD Ge sensors for rare event studies, a cooldown period of ∼2 years would be necessary to reduce the radioactive background to ≤1mBq/g.

  13. Tuning magnetocrystalline anisotropy of α″-Fe{sub 16}N{sub 2} by interstitial impurity doping: A first principles study

    Energy Technology Data Exchange (ETDEWEB)

    Khan, Imran; Hong, Jisang, E-mail: hongj@pknu.ac.kr

    2017-07-01

    Highlights: • The electronic structure and magnetic properties of 2s and 2p elements doped α″-Fe{sub 16}N{sub 2} were investigated. • The impurity doping induced local lattice distortions near the impurity site. • The local lattice distortion mainly contributed to enhance the magnetocrystalline anisotropy. • Almost 16% enhancement was achieved in coercive field due to enhancement of the magnetic anisotropy. • The maximum energy product was also enhanced due to impurity doping. - Abstract: The electronic structure and the magnetocrystalline anisotropy of impurity (Li, Be, B, C, and N) doped α″-Fe{sub 16}N{sub 2} were studied by using full potential linearized augmented plane wave method (FLAPW). From the formation energy calculations, it was evident that the 2s and 2p elements except Li could be easily doped into pure α″-Fe{sub 16}N{sub 2}. The impurity doping induced local lattice distortions near the impurity site and the magnetic moment near the impurity atom was substantially suppressed. However, the volume of the cell and the total magnetic moment of the doped systems were weakly suppressed compared to the pure α″-Fe{sub 16}N{sub 2}. Despite this relatively weak suppression in magnetization, the local distortion contributed to enhancing the magnetocrystalline anisotropy. Due to this enhancement in the anisotropy, the coercive field was also enhanced about 12–16% compared with that in pure structure. Along with the enlarged coercive field, the energy product was also increased. These results may suggest that impurity doped α″-Fe{sub 16}N{sub 2} can be used as potential rare earth free permanent magnet.

  14. Satellite NMR in Cu doped with transition impurities

    International Nuclear Information System (INIS)

    Slichter, C.P.

    1979-01-01

    Measurements were made of the conduction electron spin magnetization density, M/sub sigma/(R vector) near iron group atoms (Sc through Ni) in Cu. M/sub sigma/(R vector) produces an additional effective local field which shifts the NMR frequency of nearby shells of Cu nuclei relative to Cu nuclei far from all impurities. Resonances of nearby shells appear as weak satellites to the strong resonance of distant Cu nuclei (the main line). M/sub sigma/(R vector) at a given site is proportional through know constants to the splitting of the satellite from the main line. The shell was identified giving rise to the satellite in many cases by use of single crystals. A good approximation M/sub sigma/(R vector) is proportional to the spin susceptibility chi/sub s/ of the impurity. For CuCr we find a large temperature independent chi/sub s/, in contrast to CuMn and CuFe. The results lead to a picture of the electronic structure of Cr, Mn, and Fe along the lines of Schrieffer and Hirst as ions with integral numbers of d-electrons, possessing crystal field and spin-orbit couplings

  15. Spectroscopic and electron-ion collision data for plasma impurities

    International Nuclear Information System (INIS)

    Faenov, A.; Marchand, R.; Tawara, H.; Vainshtein, L.; Wiese, W.

    1992-01-01

    This Working Group Report briefly reviews and summarizes the available spectroscopic and electron-ion collision data for plasma impurities. Included are lithium, neon, and argon, which, although they are not plasma impurities per se, are introduced into the plasma through the application of diagnostic techniques. 32 refs, 2 tabs

  16. Donor impurity self-compensation by neutral complexes in bismuth doped lead telluride

    International Nuclear Information System (INIS)

    Ravich, Yu.I.; Nemov, S.A.; Proshin, V.I.

    1994-01-01

    Self-compensation is calculated of impurity doping action in semiconductors of the A 4 B 6 type by neutral complexes, consisting of a vacancy and two impurity atoms. Complexes entropy is estimated and the thermodynamic potential is minimized in the concentration of single two-charge vacancies and complexes. Calculation results are compared with experimental data, obtained when lead telluride doping by bismuth. Account for complex formation improves agreement theory with experiment. 4 refs., 1 fig

  17. Electron-doping by hydrogen in transition-metal dichalcogenides

    Science.gov (United States)

    Oh, Sehoon; Im, Seongil; Choi, Hyoung Joon

    Using first-principles calculations, we investigate the atomic and electronic structures of 2H-phase transition-metal dichalcogenides (TMDC), 2H-MX2, with and without defects, where M is Mo or W and X is S, Se or Te. We find that doping of atomic hydrogen on 2H-MX2 induces electron doping in the conduction band. To understand the mechanism of this electron doping, we analyze the electronic structures with and without impurities. We also calculate the diffusion energy barrier to discuss the spatial stability of the doping. Based on these results, we suggest a possible way to fabricate elaborately-patterned circuits by modulating the carrier type of 2H-MoTe2. We also discuss possible applications of this doping in designing nano-devices. This work was supported by NRF of Korea (Grant No. 2011-0018306) and KISTI supercomputing center (Project No. KSC-2016-C3-0052).

  18. Electronic structure of deep impurity centers in silicon

    International Nuclear Information System (INIS)

    Oosten, A.B. van.

    1989-01-01

    This thesis reports an experimental study of deep level impurity centers in silicon, with much attention for theoretical interpretation of the data. A detailed picture of the electronic structure of several centers was obtained by magnetic resonance techniques, such as electron paramagnetic resonance (EPR), electron-nuclear double resonance (ENDOR) and field scanned ENDOR (FSE). The thesis consists of two parts. The first part deals with chalcogen (sulfur, selenium and tellurium) related impurities, which are mostly double donors. The second part is about late transition metal (nickel, palladium and platinum) impurities, which are single (Pd,Pt) or double (Ni) acceptor centers. (author). 155 refs.; 51 figs.; 23 tabs

  19. Impurity binding energy for δ-doped quantum well structures

    Indian Academy of Sciences (India)

    Administrator

    Calculations are made for the case of not so big impurity concentrations, when impurity bands are not .... Blom et al (2003), but our data correspond qualitatively to Bastard's .... 0113U000612 and by Ukrainian Ministry of Education and Science ...

  20. Numerical simulation of the impurity photovoltaic effect in silicon solar cells doped with thallium

    International Nuclear Information System (INIS)

    Zhao Baoxing; Zhou Jicheng; Chen Yongmin

    2010-01-01

    Many attempts have been made to increase the efficiency of solar cells by introducing a deep impurity level in the semiconductor band gap. Since Tl may be the most suitable impurity for crystalline Si solar cells, the impurity photovoltaic (IPV) effect in silicon solar cell doped with thallium as impurity was investigated by the numerical solar cell simulator SCAPS. Results show that the IPV effect of thallium extends the spectral sensitivity in the sub-band gap range from 1000 to about 1400 nm. When the Tl concentration (N t ) is lower than the base doping density (N D ), the short-circuit current density and efficiency increase with increasing N t . But they decrease rapidly as the impurity density exceeds the shallow base doping density (N t >N D ). The optimum Tl concentration is about equal to the base doping density. For the Si solar cells with high internal reflection coefficients, the IPV effect becomes appreciable (ΔJ sc ∼9 mA/cm 2 and Δη∼2%).

  1. Effect of impurities on the growth of {113} interstitial clusters in silicon under electron irradiation

    OpenAIRE

    Nakai, K.; Hamada, K.; Satoh, Y.; Yoshiie, T.

    2011-01-01

    The growth and shrinkage of interstitial clusters on {113} planes were investigated in electron irradiated Czochralski grown silicon (Cz-Si), floating-zone silicon (Fz-Si), and impurity-doped Fz-Si (HT-Fz-Si) using a high voltage electron microscope. In Fz-Si, {113} interstitial clusters were formed only near the beam incident surface after a long incubation period, and shrank on subsequent irradiation from the backside of the specimen. In Cz-Si and HT-Fz-Si, {113} interstitial clusters nucle...

  2. Impurity engineering for germanium-doped Czochralski silicon wafer used for ultra large scale integrated circuit

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Jiahe; Yang, Deren [State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou (China)

    2009-07-01

    Internal gettering (IG) technology has been challenged by both the reduction of thermal budget during device fabrication and the enlargement of wafer diameter. Improving the properties of Czochralski (Cz) silicon wafers by intentional impurity doping, the so-called 'impurity engineering (IE)', is defined. Germanium has been found to be one of the important impurities for improving the internal gettering effect in Cz silicon wafer. In this paper, the investigations on IE involved with the conventional furnace anneal based denudation processing for germanium-doped Cz silicon wafer are reviewed. Meanwhile, the potential mechanisms of germanium effects for the IE of Cz silicon wafer are also interpreted based on the experimental facts. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Impurity-related nonlinear optical properties in delta-doped quantum rings: Electric field effects

    Energy Technology Data Exchange (ETDEWEB)

    Restrepo, R.L., E-mail: rrestre@gmail.com [Escuela de Ingeniería de Antioquia-EIA, Medellín (Colombia); Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia); Morales, A.L. [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia); Martínez-Orozco, J.C. [Unidad Académica de Física, Universidad Autónoma de Zacatecas, CP 98060, Zacatecas (Mexico); Baghramyan, H.M.; Barseghyan, M.G. [Department of Solid State Physics, Yerevan State University, Al. Manookian 1, 0025 Yerevan (Armenia); Mora-Ramos, M.E. [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia); Facultad de Ciencias, Universidad Autónoma del Estado de Morelos, Ave. Universidad 1001, CP 62209, Cuernavaca, Morelos (Mexico); Duque, C.A. [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia)

    2014-11-15

    Using a variational procedure within the effective mass approximation, we have calculated the donor impurity binding energy for the ground (1s-like) and the excited (2p{sub z}-like) states as well as the impurity-related nonlinear optical absorption and relative changes in the refraction index in a GaAs single quantum ring with axial n-type delta-doping. The delta-like potential along the z-direction is an approximate model analytically described using a Lorentzian function with two parameters. Additionally we consider the application of an electric field along the z-direction. It is found that the changes in the geometry of the quantum ring, the change in the 2D impurity density of the delta-like doping, and different values of the electric field lead to a shifting of the resonant peaks of the optical responses spectrum.

  4. Impurity-related nonlinear optical properties in delta-doped quantum rings: Electric field effects

    International Nuclear Information System (INIS)

    Restrepo, R.L.; Morales, A.L.; Martínez-Orozco, J.C.; Baghramyan, H.M.; Barseghyan, M.G.; Mora-Ramos, M.E.; Duque, C.A.

    2014-01-01

    Using a variational procedure within the effective mass approximation, we have calculated the donor impurity binding energy for the ground (1s-like) and the excited (2p z -like) states as well as the impurity-related nonlinear optical absorption and relative changes in the refraction index in a GaAs single quantum ring with axial n-type delta-doping. The delta-like potential along the z-direction is an approximate model analytically described using a Lorentzian function with two parameters. Additionally we consider the application of an electric field along the z-direction. It is found that the changes in the geometry of the quantum ring, the change in the 2D impurity density of the delta-like doping, and different values of the electric field lead to a shifting of the resonant peaks of the optical responses spectrum

  5. Impurity photovoltaic effect in silicon solar cell doped with sulphur: A numerical simulation

    International Nuclear Information System (INIS)

    Azzouzi, Ghania; Chegaar, Mohamed

    2011-01-01

    The impurity photovoltaic effect (IPV) has mostly been studied in various semiconductors such as silicon, silicon carbide and GaAs in order to increase infrared absorption and hence cell efficiency. In this work, sulphur is used as the IPV effect impurity incorporated in silicon solar cells. For our simulation we use the numerical device simulator (SCAPS). We calculate the solar cell performances (short circuit current density J sc , open circuit voltage V oc , conversion efficiency η and quantum efficiency QE). We study the influence of light trapping and certain impurity parameters like impurity concentration and position in the gap on the solar cell performances. Simulation results for IPV effect on silicon doped with sulphur show an improvement of the short circuit current and the efficiency for sulphur energy levels located far from the middle of the band gap especially at E c -E t =0.18 eV.

  6. Conductivity of the electron-impurity system

    International Nuclear Information System (INIS)

    Goettig, S.

    1983-09-01

    The free-carrier absorption of electromagnetic radiation due to the presence of static scatterers is examined taking into account the electron-electron interaction, the plasma-phonon polar coupling and the plasma anisotropy. For the case of strong coupling in the isotropic plasma the absorption due to the collective-mode excitation processes is, for frequencies just above the plasmon-like collective mode frequency, shown to be dominant over the absorption due to single-particle excitations. The expression for the frequency-dependent absorptive part of the conductivity due to the long-wavelength collective-mode excitations is derived for the case of multicomponent anisotropic degenerate plasma (e.g. lead chalcogenides). The results are discussed in detail and compared with available experimental data for n-PbSe. The comparison with the previous theories is also given. (author)

  7. Effect of impurities on the growth of {113} interstitial clusters in silicon under electron irradiation

    Science.gov (United States)

    Nakai, K.; Hamada, K.; Satoh, Y.; Yoshiie, T.

    2011-01-01

    The growth and shrinkage of interstitial clusters on {113} planes were investigated in electron irradiated Czochralski grown silicon (Cz-Si), floating-zone silicon (Fz-Si), and impurity-doped Fz-Si (HT-Fz-Si) using a high voltage electron microscope. In Fz-Si, {113} interstitial clusters were formed only near the beam incident surface after a long incubation period, and shrank on subsequent irradiation from the backside of the specimen. In Cz-Si and HT-Fz-Si, {113} interstitial clusters nucleated uniformly throughout the specimen without incubation, and began to shrink under prolonged irradiation at higher electron beam intensity. At lower beam intensity, however, the {113} interstitial cluster grew stably. These results demonstrate that the {113} interstitial cluster cannot grow without a continuous supply of impurities during electron irradiation. Detailed kinetics of {113} interstitial cluster growth and shrinkage in silicon, including the effects of impurities, are proposed. Then, experimental results are analyzed using rate equations based on these kinetics.

  8. Impurities good and bad: Doped cluster nanoplasmas in intense ...

    Indian Academy of Sciences (India)

    are small enough to ensure that atomic and molecular effects do not lose their relevance. This combination of ... that CS2, being itself a highly condensing material, can produce large clusters of its own. Consequently, when ..... In contrast, when a CS2 cluster is doped with a dopant (argon) that has higher ionization energy ...

  9. Topological phase, electronic, magnetic and optical properties of ScPdBi compound with Gd, Np and Cm impurities

    Energy Technology Data Exchange (ETDEWEB)

    Narimani, Mitra; Nourbakhsh, Zahra, E-mail: z.nourbakhsh@sci.ui.ac.ir

    2017-07-15

    Highlights: • Gd, Np and Cm impurities induce the magnetic moment in ScPdBi compound. • ScPdBi compound with Gd, Np and Cm impurities has normal band order. • The ε(0) and R(0) increase by increasing the atomic number of X atom. - Abstract: The electronic, magnetic and optical properties of X-doped ScPdBi (X = Gd, Np, Cm) are investigated in the framework of density functional theory. The exchange-correlation potential is treated using generalized gradient approximation with Coulomb interaction parameter. The band order and energy band gap of X-doped ScPdBi are investigated by calculation of band structure. The effect of doping impurity on magnetic properties of ScPdBi compound is studied by calculation of total and partial magnetic moments of X-doped ScPdBi compound. Furthermore, the optical properties of X-doped ScPdBi are calculated and compared in the energy range of 0–25 eV.

  10. Stark shift of impurity doped quantum dots: Role of noise

    Science.gov (United States)

    Arif, Sk. Md.; Bera, Aindrila; Ghosh, Anuja; Ghosh, Manas

    2018-02-01

    Present study makes a punctilious investigation of the profiles of Stark shift (SS) of doped GaAs quantum dot (QD) under the supervision of Gaussian white noise. A few physical parameters have been varied and the consequent variations in the SS profiles have been monitored. The said physical parameters comprise of magnetic field, confinement potential, dopant location, dopant potential, noise strength, aluminium concentration (only for AlxGa1-x As alloy QD), position-dependent effective mass (PDEM), position-dependent dielectric screening function (PDDSF), anisotropy, hydrostatic pressure (HP) and temperature. The SS profiles unfurl interesting features that heavily depend upon the particular physical quantity concerned, presence/absence of noise and the manner (additive/multiplicative) noise enters the system. The study highlights feasible means of maximizing SS of doped QD in presence of noise by suitable adjustment of several control parameters. The study deems importance in view of technological applications of QD devices where noise plays some prominent role.

  11. Magnetic properties of metallic impurities with strongly correlated electrons

    Czech Academy of Sciences Publication Activity Database

    Janiš, Václav; Ringel, Matouš

    2009-01-01

    Roč. 115, č. 1 (2009), s. 30-35 ISSN 0587-4246 R&D Projects: GA ČR GA202/07/0644 Institutional research plan: CEZ:AV0Z10100520 Keywords : And erson impurity * strong electron correlations * spin-polarized solution * three-channel parquet equations * magnetic field Subject RIV: BE - Theoretical Physics Impact factor: 0.433, year: 2009 http://przyrbwn.icm.edu.pl/APP/ABSTR/115/a115-1-5.html

  12. Dynamic conductivity modified by impurity resonant states in doping three-dimensional Dirac semimetals

    Science.gov (United States)

    Li, Shuai; Wang, Chen; Zheng, Shi-Han; Wang, Rui-Qiang; Li, Jun; Yang, Mou

    2018-04-01

    The impurity effect is studied in three-dimensional Dirac semimetals in the framework of a T-matrix method to consider the multiple scattering events of Dirac electrons off impurities. It has been found that a strong impurity potential can significantly restructure the energy dispersion and the density of states of Dirac electrons. An impurity-induced resonant state emerges and significantly modifies the pristine optical response. It is shown that the impurity state disturbs the common longitudinal optical conductivity by creating either an optical conductivity peak or double absorption jumps, depending on the relative position of the impurity band and the Fermi level. More importantly, these conductivity features appear in the forbidden region between the Drude and interband transition, completely or partially filling the Pauli block region of optical response. The underlying physics is that the appearance of resonance states as well as the broadening of the bands leads to a more complicated selection rule for the optical transitions, making it possible to excite new electron-hole pairs in the forbidden region. These features in optical conductivity provide valuable information to understand the impurity behaviors in 3D Dirac materials.

  13. The electronic properties of phosphorus-doped GaN nanowires from first-principle calculations

    International Nuclear Information System (INIS)

    Fu, Nannan; Li, Enling; Cui, Zhen; Ma, Deming; Wang, Wei; Zhang, Yulong; Song, Sha; Lin, Jie

    2014-01-01

    Highlights: • The P impurities tend to enrich at the surface of GaN nanowires. • The lattice parameters of GaN nanowires are changed by the P impurity. • Donor impurity level appears when the P impurity substitutes for the Ga atom. • The band gap decreases slightly when the P impurity substitutes for the N atom. - Abstract: The electronic properties of phosphorus-doped unsaturated and saturated gallium nitride (GaN) nanowires have been investigated from first-principles using the ultrasoft pseudopotential method. The results of these calculations indicate that the P impurities are enriched at the surface of gallium nitride nanowires, and that the structural symmetry of GaN nanowires is broken due to changes in the lattice parameters. When the P impurity substitutes for the Ga atom, the width of band gap increases at the Γ point, a donor impurity level appears in the band gap, and the P impurity and adjacent N atoms exists covalent interaction. Moreover, when the P impurity substitutes for the N atom, the width of the band gap decreases slightly at the Γ point, there is no obvious impurity level in the band gap, and P–Ga covalent bonds are formed, including those composed of ionic bonds. These conclusions indicate that the incorporation of P impurities can improve the field emission performance of GaN nanowires, which is consistent with the experimental results

  14. The electronic properties of phosphorus-doped GaN nanowires from first-principle calculations

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Nannan; Li, Enling, E-mail: Lienling@xaut.edu.cn; Cui, Zhen; Ma, Deming; Wang, Wei; Zhang, Yulong; Song, Sha; Lin, Jie

    2014-05-01

    Highlights: • The P impurities tend to enrich at the surface of GaN nanowires. • The lattice parameters of GaN nanowires are changed by the P impurity. • Donor impurity level appears when the P impurity substitutes for the Ga atom. • The band gap decreases slightly when the P impurity substitutes for the N atom. - Abstract: The electronic properties of phosphorus-doped unsaturated and saturated gallium nitride (GaN) nanowires have been investigated from first-principles using the ultrasoft pseudopotential method. The results of these calculations indicate that the P impurities are enriched at the surface of gallium nitride nanowires, and that the structural symmetry of GaN nanowires is broken due to changes in the lattice parameters. When the P impurity substitutes for the Ga atom, the width of band gap increases at the Γ point, a donor impurity level appears in the band gap, and the P impurity and adjacent N atoms exists covalent interaction. Moreover, when the P impurity substitutes for the N atom, the width of the band gap decreases slightly at the Γ point, there is no obvious impurity level in the band gap, and P–Ga covalent bonds are formed, including those composed of ionic bonds. These conclusions indicate that the incorporation of P impurities can improve the field emission performance of GaN nanowires, which is consistent with the experimental results.

  15. Electronic structure of p type Delta doped systems

    International Nuclear Information System (INIS)

    Gaggero S, L.M.; Perez A, R.

    1998-01-01

    We summarize of the results obtained for the electronic structure of quantum wells that consist in an atomic layer doped with impurities of p type. The calculations are made within the frame worth of the wrapper function approach to independent bands and with potentials of Hartree. We study the cases reported experimentally (Be in GaAs and B in Si). We present the levels of energy, the wave functions and the rate of the electronic population between the different subbands, as well as the dependence of these magnitudes with the density of impurities in the layer. The participation of the bans of heavy holes is analysed, light and split-off band in the total electronic population. The effect of the temperature is discussed and we give a possible qualitative explanation of the experimental optical properties. (Author)

  16. Electron and impurity transport studies in the TCV Tokamak

    Energy Technology Data Exchange (ETDEWEB)

    Wagner, D.

    2013-05-15

    In this thesis electron and impurity transport are studied in the Tokamak à Configuration Variable (TCV) located at CRPP-EPFL in Lausanne. Understanding particle transport is primordial for future nuclear fusion power plants. Modeling of experiments in many specific plasma scenarios can help to understand the common elements of the physics at play and to interpret apparently contradictory experiments on the same machine and across different machines. The first part of this thesis deals with electron transport in TCV high confinement mode plasmas. It was observed that the electron density profile in these plasmas flatten when intense electron heating is applied, in contrast to observations on other machines where the increase of the profile peakedness was reported. It is shown with quasi-linear gyrokinetic simulations that this effect, usually interpreted as collisionality dependence, stems from the combined effect of many plasma parameters. The influence of the collisionality, electron to ion temperature ratio, the ratio of temperature gradients, and the Ware-pinch are studied with detailed parameter scans. It is shown that the complex interdependence of the various plasma parameters is greatly simplified when the simulation results are interpreted as a function of the average frequency of the main modes contributing to radial transport. In this way the model is able to explain the experimental results. It was also shown that the same basic understanding is at play in L-modes, H-modes and electron internal transport barriers. The second part of the thesis is devoted to impurity transport. A multi-purpose gas injection system is developed, commissioned and calibrated. It is shown that the system is capable of massive gas injections to provoke disruptions and delivering small puffs of gaseous impurities for perturbative transport experiments. This flexible tool is exploited in a series of impurity transport measurements with argon and neon injections. The impurities

  17. Electron and impurity transport studies in the TCV Tokamak

    International Nuclear Information System (INIS)

    Wagner, D.

    2013-05-01

    In this thesis electron and impurity transport are studied in the Tokamak à Configuration Variable (TCV) located at CRPP-EPFL in Lausanne. Understanding particle transport is primordial for future nuclear fusion power plants. Modeling of experiments in many specific plasma scenarios can help to understand the common elements of the physics at play and to interpret apparently contradictory experiments on the same machine and across different machines. The first part of this thesis deals with electron transport in TCV high confinement mode plasmas. It was observed that the electron density profile in these plasmas flatten when intense electron heating is applied, in contrast to observations on other machines where the increase of the profile peakedness was reported. It is shown with quasi-linear gyrokinetic simulations that this effect, usually interpreted as collisionality dependence, stems from the combined effect of many plasma parameters. The influence of the collisionality, electron to ion temperature ratio, the ratio of temperature gradients, and the Ware-pinch are studied with detailed parameter scans. It is shown that the complex interdependence of the various plasma parameters is greatly simplified when the simulation results are interpreted as a function of the average frequency of the main modes contributing to radial transport. In this way the model is able to explain the experimental results. It was also shown that the same basic understanding is at play in L-modes, H-modes and electron internal transport barriers. The second part of the thesis is devoted to impurity transport. A multi-purpose gas injection system is developed, commissioned and calibrated. It is shown that the system is capable of massive gas injections to provoke disruptions and delivering small puffs of gaseous impurities for perturbative transport experiments. This flexible tool is exploited in a series of impurity transport measurements with argon and neon injections. The impurities

  18. A Study of the Vacancy-Impurity Interaction in Dilute Nickel Alloys by Core Electron Annihilation

    Science.gov (United States)

    Arbuzov, V. L.; Danilov, S. E.; Druzhkov, A. P.

    1997-08-01

    It is shown that the angular correlation of annihilation radiation can be used to identify vacancy-impurity complexes in dilute alloys. Annihilation of trapped positrons with core electrons bears information about the chemical environment of a vacancy defect. The method is especially effective for d-matrices doped with sp-impurities since annihilation parameters of positrons with d- and sp-shell electrons differ considerably. The potentialities of the method of core-electron annihilation of positrons are demonstrated taking electron-irradiated dilute Ni-P and Ni-Si alloys as an example. It is shown that the interaction between the vacancies, which migrate at the III stage of annealing, and P atoms in Ni-P causes a considerable change in the annihilation parameters of positrons with core electrons compared to pure Ni. In Ni-Si alloys the annihilation parameters of trapped positrons with core electrons do not differ from those in Ni. This fact is an evidence that Si atoms do not interact with vacancies in Ni.

  19. Intermodulation distortion and surface resistance in impurity-doped YBCO and MgB{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Agassi, Y.D. [Naval Surface Warfare Center, Carderock Division, Bethesda, MD 20817 (United States); Oates, D.E., E-mail: oates@ll.mit.edu [MIT-Lincoln Laboratory, Lexington, MA 02420 (United States)

    2014-11-15

    Highlights: • Calculations of impurity-doping effects on surface resistance and intermodulation distortion. • The calculations are compared with previously published measurements in YBCO and MgB{sub 2}. • Excellent agreement between calculations and experiments are shown. • The effects of the symmetry of the energy gap are presented and discussed. - Abstract: Calculations of the microwave intermodulation distortion (IMD) and surface resistance of impurity-doped YBCO, MgB{sub 2} and Nb are presented. These are qualitatively distinct superconductors due to their energy-gap symmetries, d-wave (ℓ = 2), i-wave (ℓ = 6) and s-wave (ℓ = 0), respectively. The calculations are compared with previously published IMD and surface-resistance measurements of impurity-doped YBCO and Nb. The agreement between the data and fitted calculations is excellent in all cases. In the absence of IMD and surface-resistance measurements for doped MgB{sub 2}, we present representative predictions. The calculations are based on a Green’s-function approach that yields analytical expressions for the penetration depth and the nonlinear kernel in the constitutive relation. This penetration-depth expression reproduces the measured T{sup 2} low-temperature variation for doped superconductors and the surface-resistance reduction over that of the pure material. Regarding the IMD in superconductors with a nodal energy gap, the effect of doping is to enhance its magnitude and suppress its low-temperature 1/T{sup 2} divergence predicted by the nonlinear Meissner effect.

  20. Effects of heavy impurity doping on the np product in p-GaAs

    International Nuclear Information System (INIS)

    Klausmeier-Brown, M.E.; Melloch, M.R.; Lundstrom, M.S.

    1990-01-01

    Heavy impurity doping has a strong effect on the np product of n 2 ie , in p-GaAs. The authors' initial work made use of a successive etch technique to extract the electron injection current in p-n diodes and to measure n 2 ie D n up to N A ∼ 10 19 cm -3 . During the past year the authors used a new approach, analysis of the collector current in n-p-n homojunction bipolar transistors. Because this new approach isolates the current of interest, it offered increased accuracy and enabled us to extend the measurements up to N A ∼ 10 20 cm -3 . These new measurements confirm the diode-based data below 10 19 cm -3 , but show that its extrapolation above 10 19 cm -3 would yield incorrect results. The authors' previous work on the implications of effective bandgap shrinkage for GaAs-based solar cells is reassessed in light of the newer data

  1. Photoluminescence studies of ZnO doped with stable and radioactive impurities

    CERN Document Server

    Cullen, Joseph; Martin O, Henry

    In this work the IIb-VI compound semiconductor ZnO is doped, via ion implantation of stable and radioactive isotopes, in order to investigate the chemical nature of exciton re-combinations bound to previously unidentified defects. Photo-luminescence (PL) is discussed and is used extensively as the primary investigative technique. A new defect emission feature, centred around 3.324 eV, is found to be related to Ge impurities occupying substitutional Zn sites in ZnO. This centre is investigated by temperature dependent PL, piezo-spectroscopy and Zeeman spectroscopy. The centre is donor-like in nature. Uniaxial stress measurements indicate that the defect centre has trigonal symmetry and applied magnetic field measurements reveal the neutral charge state of the centre and the donor-like binding mechanism. Subsequent to this, a study is undertaken of the iso-electronic defect Hg in ZnO studying the zero phonon feature at 3.279 eV and its associated phonon replica band. Temperature dependent measurements reveal tw...

  2. Flux pinning properties of impurity doped MgB2 bulks synthesized by diffusion method

    International Nuclear Information System (INIS)

    Ueda, Shinya; Shimoyama, Jun-ichi; Yamamoto, Akiyasu; Katsura, Yukari; Iwayama, Isao; Horii, Shigeru; Kishio, Kohji

    2005-01-01

    Doping effects of carbon-containing impurities on the critical current properties and microstructure were systematically studied for highly dense MgB 2 bulks prepared by the diffusion method starting from magnesium and boron which are separately packed in sealed stainless tubes. Obtained samples exhibited improved critical current density, J c , simply by an increase of effective current pass. A non-doped MgB 2 recorded almost double high J c at 20 K compared with those of the conventional porous MgB 2 bulks having ∼50% of the theoretical density, while irreversibility field, H irr , did not largely change. J c under high magnetic fields were enhanced by doping of carbon-containing impurities, such as SiC and B 4 C. Optimal doping levels of SiC and B 4 C for high critical current properties at 20 K are found to be ∼2% and 5%, respectively, as nominal carbon concentration at boron site. Difference in the optimal doping levels is originated from the difference in their reactivity

  3. Impurities-Si interstitials interaction in Si doped with B or Ga during ion irradiation

    International Nuclear Information System (INIS)

    Romano, L; Piro, A M; Grimaldi, M G; Rimini, E

    2005-01-01

    Substitutional impurities (B, Ga) in Si experienced an off-lattice displacement during ion-irradiation using a H + or He + beam at room temperature in random incidence. Samples were prepared by solid phase epitaxy (SPE) of pre-amorphized Si subsequently implanted with B and Ga at a concentration of about 1 x10 20 at.cm -3 confined in a 300 nm thick surface region. The lattice location of impurities was performed by a channelling technique along different axes ( , ) using the 11 B(p,α) 8 Be reaction and standard RBS for B and Ga, respectively. The normalized channelling yield χ of the impurity signal increases with the ion fluence, indicating a progressive off-lattice displacement of the dopant during irradiation in random incidence, until it saturates at χ F I ) generated by the impinging beam in the doped region

  4. Magnetic impurity in a system of interacting electrons

    International Nuclear Information System (INIS)

    Huynh Thanh Duc; Nguyen Toan Thang

    1999-04-01

    The Kondo effect of the Anderson impurity in a correlated conduction electron system is studied within the slave boson mean-field theory. The interacting conduction electrons are described by a Hubbard model with an interaction of strength U. It is shown that the Kondo temperature T K decreases with an increase of U. In the intermediate regime at half-filling the exponential scale of the Kondo temperature T K is lost already at the saddle-point level of slave boson formulation. (author)

  5. Peculiarities of defect formation in InP single crystals doped with donor (S, Ge) and acceptor (Zn) impurities

    International Nuclear Information System (INIS)

    Mikryukova, E.V.; Morozov, A.N.; Berkova, A.V.; Nashel'skij, A.Ya.; Yakobson, S.V.

    1988-01-01

    Peculiarities of dislocation and microdefect formation in InP monocrystals doped with donor (S,Ge) and acceptor (Zn) impurities are investigated by the metallography. Dependence of dislocation density on the concentration of alloying impurity is established. Microdefects leading to the appearance of 5 different types of etch figures are shown to be observed in doped InP monocrystals. The mechanism of microdefect formation is suggested

  6. Structural, electronic, and hyperfine properties of pure and Ta-doped em>m>-ZrO2

    DEFF Research Database (Denmark)

    Taylor, M.A.; Alonso, R.E.; Errico, L.A.

    2012-01-01

    plane wave plus local orbital (APW+lo) method was applied to treat the electronic structure of the doped system including the atomic relaxations introduced by the impurities in the host in a fully self-consistent way using a supercell approach. Different charge states of the Ta impurity were considered...

  7. Electronic properties of BN-doped bilayer graphene and graphyne in the presence of electric field

    Science.gov (United States)

    Majidi, R.; Karami, A. R.

    2013-11-01

    In the present paper, we have used density functional theory to study electronic properties of bilayer graphene and graphyne doped with B and N impurities in the presence of electric field. It has been demonstrated that a band gap is opened in the band structures of the bilayer graphene and graphyne by B and N doping. We have also investigated influence of electric field on the electronic properties of BN-doped bilayer graphene and graphyne. It is found that the band gaps induced by B and N impurities are increased by applying electric field. Our results reveal that doping with B and N, and applying electric field are an effective method to open and control a band gap which is useful to design carbon-based next-generation electronic devices.

  8. First-principles study on electronic structures and magnetic properties of Eu-doped phosphorene

    Science.gov (United States)

    Luan, Zhaohui; Zhao, Lei; Chang, Hao; Sun, Dan; Tan, Changlong; Huang, Yuewu

    2017-11-01

    The structural, electronic and magnetic properties of Eu-doped phosphorene with different doping concentrations were investigated by first-principles calculations for the first time. The calculations show that Eu-doped phosphorene systems are stable and have the large magnetic moments of more than 6 μB by 2.7, 6.25 and 12.5 at.% doping concentrations. The major contribution to the magnetic moment stems from the 4f states of Eu-doped atom. Meanwhile, Eu-doped atom introduces the impurity bands which can be changed by different doping concentrations. In order to determine the magnetic interaction, the different configurations for two Eu atoms doping in 3 × 3 × 1 phosphorene supercell were studied, which reveals that all of the configurations tend to form ferromagnetic. These results can provide references for inducing large magnetism of two-dimensional phosphorene, which are valuable for their applications in spintronic devices and novel semiconductor materials.

  9. Role of Sn impurity on electronic topological transitions in 122 Fe-based superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Ghosh, Haranath, E-mail: hng@rrcat.gov.in [Homi Bhabha National Institute, Anushaktinagar, Mumbai 400 094 (India); Indus Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Sen, Smritijit [Homi Bhabha National Institute, Anushaktinagar, Mumbai 400 094 (India); Indus Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

    2016-08-25

    We show that only a few percentage of Sn doping at the Ba site on BaFe{sub 2}As{sub 2}, can cause electronic topological transition, namely, the Lifshitz transition. A hole like d{sub xy} band of Fe undergoes electron like transition due to 4% Sn doping. Lifshitz transition is found in BaFe{sub 2}As{sub 2} system around all the high symmetry points. Our detailed first principles simulation predicts absence of any Lifshitz transition in other 122 family compounds like SrFe{sub 2}As{sub 2}, CaFe{sub 2}As{sub 2} in agreement with experimental observations. This work bears practical significance due to the facts that a few percentage of Sn impurity is in-built in tin-flux grown single crystals method of synthesizing 122 materials and inter-relationship among the Lifshitz transition, magnetism and superconductivity. - Highlights: • Electronic topological transition due to Sn contamination in BaFe{sub 2}As{sub 2}. • Hole like Fe-d{sub xy} band converts into electron like in 3% Sn contaminated BaFe{sub 2}As{sub 2}. • Electron like Fe-d{sub xz}, d{sub yz} bands moves above Fermi Level at X,Y points. • No Lifshitz transition found in Sn-contaminated Sr-122, Ca-122 systems.

  10. Ion-beam doping of amorphous silicon with germanium isovalent impurity

    International Nuclear Information System (INIS)

    Khokhlov, A.F.; Mashin, A.I.; Ershov, A.V.; Mashin, N.I.; Ignat'eva, E.A.

    1988-01-01

    Experimental data on ion-beam doping of amorphous silicon containing minor germanium additions by donor and acceptor impurity are presented. Doping of a-Si:Ge films as well as of a-Si layers was performed by implantation of 40 keV energy B + ions or 120 keV energy phosphorus by doses from 3.2x10 13 up to 1.3x10 17 cm -2 . Ion current density did not exceed 1 μA/cm 2 . Radiation defect annealing was performed at 400 deg C temperature during 30 min. Temperature dependences of conductivity in the region of 160-500 K were studied. It is shown that a-Si:Ge is like hydrogenized amorphous silicon in relation to doping

  11. Doping in silicon nanocrystals: An ab initio study of the structural, electronic and optical properties

    International Nuclear Information System (INIS)

    Iori, Federico; Degoli, Elena; Luppi, Eleonora; Magri, Rita; Marri, Ivan; Cantele, G.; Ninno, D.; Trani, F.; Ossicini, Stefano

    2006-01-01

    There are experimental evidences that doping control at the nanoscale can significantly modify the optical properties with respect to the pure systems. This is the case of silicon nanocrystals (Si-nc), for which it has been shown that the photoluminescence (PL) peak can be tuned also below the bulk Si band gap by properly controlling the impurities, for example by boron (B) and phosphorus (P) codoping. In this work, we report on an ab initio study of impurity states in Si-nc. We consider B and P substitutional impurities for Si-nc with a diameter up to 2.2 nm. Formation energies (FEs), electronic, optical and structural properties have been determined as a function of the cluster dimension. For both B-doped and P-doped Si-nc the FE increases on decreasing the dimension, showing that the substitutional doping gets progressively more difficult for the smaller nanocrystals. Moreover, subsurface impurity positions result to be the most stable ones. The codoping reduces the FE strongly favoring this process with respect to the simple n-doping or p-doping. Such an effect can be attributed to charge compensation between the donor and the acceptor atoms. Moreover, smaller structural deformations, with respect to n-doped and p-doped cases, localized only around the impurity sites are observed. The band gap and the optical threshold are largely reduced with respect to the undoped Si-nc showing the possibility of an impurity-based engineering of the Si-nc PL properties

  12. Electron density of states in a one-dimensional distorted system with impurities: Coherent potential approximation

    International Nuclear Information System (INIS)

    Bulka, B.R.

    1982-04-01

    A tight-binding one-dimensional distorted system with impurities is considered and the electron density of states is calculated in the coherent potential approximation. It is shown that two types of impurities, an impurity built in a chain and a domain wall (a soliton), play the essential role and a drastic reduction of the energy gap is observed for a few per cent of impurities. The experimental situation in polyacetylene is also discussed. (author)

  13. Recombination of charge carriers on radiation-induced defects in silicon doped by transition metals impurities

    CERN Document Server

    Kazakevich, L A

    2003-01-01

    It has been studied the peculiarities of recombination of nonequilibrium charge carriers on radiation-induced defects in received according to Czochralski method p-silicon (p approx 3 - 20 Ohm centre dot cm), doped by one of the impurities of transition metals of the IV-th group of periodic table (titanium, zirconium, hafnium). Experimental results are obtained out of the analysis of temperature and injection dependence of the life time of charge carriers. The results are explained taking into consideration the influences of elastic stress fields created by the aggregates of transition metals atoms on space distribution over the crystal of oxygen and carbon background impurities as well as on the migration of movable radiation-induced defects during irradiation. (authors).

  14. Electronic Structure and Optical Properties of Co and Fe doped ZnO

    Directory of Open Access Journals (Sweden)

    Li Chunping

    2016-01-01

    Full Text Available First-principle ultrasoft pseudo potential approach of the plane wave based on density functional theory has been used for studying the electronic characterization and optical properties of ZnO and Fe, Co doped ZnO. The results show that the doping impurities change the lattice parameters a little, but bring more changes in the electronic structures. The band gaps are broadened by doping. And the Fermi level accesses to the conduction band which will lead the system to show the character of metallic properties. The dielectric function and absorption peaks are identified and the changes compared to pure ZnO are analyzed in detail.

  15. Electronic Raman response in electron-doped cuprate superconductors

    International Nuclear Information System (INIS)

    Geng Zhihao; Feng Shiping

    2012-01-01

    The electronic Raman response in the electron-doped cuprate superconductors is studied based on the t-t'-J model. It is shown that although the domelike shape of the doping dependent peak energy in the B 2g symmetry is a common feature for both electron-doped and hole-doped cuprate superconductors, there are pronounced deviations from a cubic response in the B 2g channel and a linear response in the B 2g channel for the electron-doped case in the low energy limit. It is also shown that these pronounced deviations are mainly caused by a nonmonotonic d-wave gap in the electron-doped cuprate superconductors.

  16. Influence of Impurities on the Luminescence of Er3+ Doped BaTiO3 Nanophosphors

    Directory of Open Access Journals (Sweden)

    G. D. Webler

    2014-01-01

    Full Text Available The influence of the presence of barium carbonate (BaCO3 phase on the luminescence properties of barium titanate nanocrystals (BaTiO3 powders was investigated. Structural and optical characterizations of erbium (Er3+ doped BaTiO3 synthesized by the sol-emulsion-gel were performed. Using Fourier transform infrared spectroscopy and X-ray powder diffraction, we identified the presence of impurities related to BaCO3 and quantified its fraction. It was observed that the presence of BaCO3 phase, even at low levels, depletes significantly the infrared-to-visible upconverted luminescence efficiency of the produced nanopowders.

  17. Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides

    Science.gov (United States)

    Liu, Zhiqiang; Yi, Xiaoyan; Yu, Zhiguo; Yuan, Gongdong; Liu, Yang; Wang, Junxi; Li, Jinmin; Lu, Na; Ferguson, Ian; Zhang, Yong

    2016-01-01

    In this work, a new strategy for achieving efficient p-type doping in high bandgap nitride semiconductors to overcome the fundamental issue of high activation energy has been proposed and investigated theoretically, and demonstrated experimentally. Specifically, in an AlxGa1-xN/GaN superlattice structure, by modulation doping of Mg in the AlxGa1-xN barriers, high concentration of holes are generated throughout the material. A hole concentration as high as 1.1 × 1018 cm-3 has been achieved, which is about one order of magnitude higher than that typically achievable by direct doping GaN. Results from first-principle calculations indicate that the coupling and hybridization between Mg 2p impurity and the host N 2p orbitals are main reasons for the generation of resonant states in the GaN wells, which further results in the high hole concentration. We expect this approach to be equally applicable for other high bandgap materials where efficient p-type doing is difficult. Furthermore, a two-carrier-species Hall-effect model is proposed to delineate and discriminate the characteristics of the bulk and 2D hole, which usually coexist in superlattice-like doping systems. The model reported here can also be used to explain the abnormal freeze-in effect observed in many previous reports.

  18. Ferromagnetic semiconductor-metal transition in heterostructures of electron doped europium monoxide

    International Nuclear Information System (INIS)

    Stollenwerk, Tobias

    2013-09-01

    In the present work, we develop and solve a self-consistent theory for the description of the simultaneous ferromagnetic semiconductor-metal transition in electron doped Europium monoxide. We investigate two different types of electron doping, Gadolinium impurities and Oxygen vacancies. Besides the conduction band occupation, we can identify low lying spin fluctuations on magnetic impurities as the driving force behind the doping induced enhancement of the Curie temperature. Moreover, we predict the signatures of these magnetic impurities in the spectra of scanning tunneling microscope experiments. By extending the theory to allow for inhomogeneities in one spatial direction, we are able to investigate thin films and heterostructures of Gadolinium doped Europium monoxide. Here, we are able to reproduce the experimentally observed decrease of the Curie temperature with the film thickness. This behavior is attributed to missing coupling partners of the localized 4f moments as well as to an electron depletion at the surface which leads to a reduction of the number of itinerant electrons. By investigating the influence of a metallic substrate onto the phase transition in Gadolinium doped Europium monoxide, we find that the Curie temperature can be increased up to 20%. However, as we show, the underlying mechanism of metal-interface induced charge carrier accumulation is inextricably connected to a suppression of the semiconductor-metal transition.

  19. Ferromagnetic semiconductor-metal transition in heterostructures of electron doped europium monoxide

    Energy Technology Data Exchange (ETDEWEB)

    Stollenwerk, Tobias

    2013-09-15

    In the present work, we develop and solve a self-consistent theory for the description of the simultaneous ferromagnetic semiconductor-metal transition in electron doped Europium monoxide. We investigate two different types of electron doping, Gadolinium impurities and Oxygen vacancies. Besides the conduction band occupation, we can identify low lying spin fluctuations on magnetic impurities as the driving force behind the doping induced enhancement of the Curie temperature. Moreover, we predict the signatures of these magnetic impurities in the spectra of scanning tunneling microscope experiments. By extending the theory to allow for inhomogeneities in one spatial direction, we are able to investigate thin films and heterostructures of Gadolinium doped Europium monoxide. Here, we are able to reproduce the experimentally observed decrease of the Curie temperature with the film thickness. This behavior is attributed to missing coupling partners of the localized 4f moments as well as to an electron depletion at the surface which leads to a reduction of the number of itinerant electrons. By investigating the influence of a metallic substrate onto the phase transition in Gadolinium doped Europium monoxide, we find that the Curie temperature can be increased up to 20%. However, as we show, the underlying mechanism of metal-interface induced charge carrier accumulation is inextricably connected to a suppression of the semiconductor-metal transition.

  20. The effect of impurities on the electronic properties of MgO

    Energy Technology Data Exchange (ETDEWEB)

    Jalili, Seifollah [Department of Chemistry, K.N. Toosi University of Technology, P.O. Box 16315-1618, Tehran (Iran, Islamic Republic of); Computational Physical Sciences Research Laboratory, Department of Nano-Science, Institute for Studies in Theoretical Physics and Mathematics (IPM), P.O. Box 19395-5531, Tehran (Iran, Islamic Republic of)], E-mail: sjalili@nano.ipm.ac.ir; Majidi, Roya [Department of Physics, Shahid Beheshti University, Tehran (Iran, Islamic Republic of)

    2008-10-01

    The effect of impurities on the electronic properties of MgO is investigated using the full potential linearized augmented plane-wave plus local-orbitals method based on density functional theory. The electronic band structures and density of states of MgO in the presence of Ca, Li, and Na impurities were calculated. It is found that increasing the amount of Ca impurity decreases the energy band gap and increases the width of the upper part of the valence band. Some of the considered impurities (Li and Na) change the electronic properties of MgO extensively.

  1. The effect of impurities on the electronic properties of MgO

    International Nuclear Information System (INIS)

    Jalili, Seifollah; Majidi, Roya

    2008-01-01

    The effect of impurities on the electronic properties of MgO is investigated using the full potential linearized augmented plane-wave plus local-orbitals method based on density functional theory. The electronic band structures and density of states of MgO in the presence of Ca, Li, and Na impurities were calculated. It is found that increasing the amount of Ca impurity decreases the energy band gap and increases the width of the upper part of the valence band. Some of the considered impurities (Li and Na) change the electronic properties of MgO extensively

  2. Excitation kinetics of impurity doped quantum dot driven by Gaussian white noise: Interplay with external field

    International Nuclear Information System (INIS)

    Pal, Suvajit; Sinha, Sudarson Sekhar; Ganguly, Jayanta; Ghosh, Manas

    2013-01-01

    Highlights: • The excitation kinetics of impurity doped quantum dot has been investigated. • The dot is subject to Gaussian white noise. • External oscillatory field is also applied. • Noise strength and field intensity fabricate the kinetics. • Role of dopant location has also been analyzed. - Abstract: We investigate the excitation kinetics of a repulsive impurity doped quantum dot initiated by simultaneous application of Gaussian white noise and external sinusoidal field. We have considered both additive and multiplicative noise (in Stratonovich sense). The combined influences of noise strength (ζ) and the field intensity (∊) have been capsuled by invoking their ratio (η). The said ratio and the dopant location have been found to fabricate the kinetics in a delicate way. Moreover, the influences of additive and multiplicative nature of the noise on the excitation kinetics have been observed to be widely different. The investigation reveals emergence of maximization/minimization and saturation in the excitation kinetics as a result of complex interplay between η and the dopant coordinate (r 0 ). The present investigation is believed to provide some useful insights in the functioning of mesoscopic devices where noise plays some significant role

  3. Impurity strength and impurity domain modulated frequency-dependent linear and second non-linear response properties of doped quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Datta, Nirmal Kumar [Department of Physics, Suri Vidyasagar College, Suri, Birbhum 731 101, West Bengal (India); Ghosh, Manas [Department of Chemistry, Physical Chemistry Section, Visva Bharati University, Santiniketan, Birbhum 731 235, West Bengal (India)

    2011-08-15

    We explore the pattern of frequency-dependent linear and second non-linear optical responses of repulsive impurity doped quantum dots harmonically confined in two dimensions. The dopant impurity potential chosen assumes a Gaussian form and it is doped into an on-center location. The quantum dot is subject to a periodically oscillating external electric field. For some fixed values of transverse magnetic field strength ({omega}{sub c}) and harmonic confinement potential ({omega}{sub 0}), the influence of impurity strength (V{sub 0}) and impurity domain ({xi}) on the diagonal components of the frequency-dependent linear ({alpha}{sub xx} and {alpha}{sub yy}) and second non-linear ({gamma}{sub xxxx} and {gamma}{sub yyyy}) responses of the dot are computed through a linear variational route. The investigations reveal that the optical responses undergo enhancement with increase in both V{sub 0} and {xi} values. However, in the limitingly small dopant strength regime one observes a drop in the optical responses with increase in V{sub 0}. A time-average rate of energy transfer to the system is often invoked to support the findings. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Electronic and magnetic properties of SnS2 monolayer doped with non-magnetic elements

    Science.gov (United States)

    Xiao, Wen-Zhi; Xiao, Gang; Rong, Qing-Yan; Wang, Ling-Ling

    2018-05-01

    We performed a systematic study of the electronic structures and magnetic properties of SnS2 monolayer doped with non-magnetic elements in groups IA, IIA and IIIA based on the first-principles methods. The doped systems exhibit half-metallic and metallic natures depending on the doping elements. The formation of magnetic moment is attributable to the cooperative effect of the Hund's rule coupling and hole concentration. The spin polarization can be stabilized and enhanced through confining the delocalized impurity states by biaxial tensile strain in hole-doped SnS2 monolayer. Both the double-exchange and p-p exchange mechanisms are simultaneously responsible for the ferromagnetic ground state in those hole-doped materials. Our results demonstrate that spin polarization can be induced and controlled in SnS2 monolayers by non-magnetic doping and tensile strain.

  5. Effect of doping of OH- and CN- on the liberation of I2 molecules in KI by gamma-irradiation, impurity concentration effect

    International Nuclear Information System (INIS)

    Shirke, A.K.; Pode, R.B.; Deshmukh, B.T.

    1996-01-01

    Photodecomposition of pure and doped KI powder (KI:KOH; KI:KCN; Impurity concentration, 100, 300, 500, 700 and 1000 ppm) to produce free I 2 molecules during gamma irradiation is studied with the help of absorption and IR measurements. Large number of I 2 molecules are formed in pure KI as compared to the doped samples. Hydroxide impurity increases the rate of liberation of I 2 molecules whereas the cyanide impurity decreases the rate of liberation of I 2 molecules. (Author)

  6. The study of electronic structures and optical properties of Al-doped GaN

    International Nuclear Information System (INIS)

    Li Enling; Hou Liping; Liu Mancang; Xi Meng; Wang Xiqiang; Dai Yuanbin; Li Lisha

    2011-01-01

    The electronic structures and optical properties of undoped and Al-doped GaN (Al x Ga 1-x N, x=0.0625, 0.125, 0.25) have been studied based on generalized gradient approximation (GGA) method of density functional theory (DFT). The differences of the electronic structures and optical properties of undoped and Al-doped GaN have been discussed in detail. The result shows: according to total density of state of undoped and Al-doped GaN, the conduction band becomes width and moves to high energy level with gradual increase concentration of Al impurity. Impurity energy band isn't found in energy band structures of Al x Ga 1-x N, the same as energy band structures of undoped GaN, but the band gaps gradually become wide with increase of Al impurity. Absorption spectra of undoped and Al-doped GaN of main absorption peak moves to high energy level with increase of Al impurity.

  7. Energy levels and far-infrared optical absorption of impurity doped semiconductor nanorings: Intense laser and electric fields effects

    Energy Technology Data Exchange (ETDEWEB)

    Barseghyan, M.G., E-mail: mbarsegh@ysu.am

    2016-11-10

    Highlights: • The electron-impurity interaction on energy levels in nanoring have been investigated. • The electron-impurity interaction on far-infrared absorption have been investigated. • The energy levels are more stable for higher values of electric field. - Abstract: The effects of electron-impurity interaction on energy levels and far-infrared absorption in semiconductor nanoring under the action of intense laser and lateral electric fields have been investigated. Numerical calculations are performed using exact diagonalization technique. It is found that the electron-impurity interaction and external fields change the energy spectrum dramatically, and also have significant influence on the absorption spectrum. Strong dependence on laser field intensity and electric field of lowest energy levels, also supported by the Coulomb interaction with impurity, is clearly revealed.

  8. Effects of electronically neutral impurities on muonium in germanium

    International Nuclear Information System (INIS)

    Clawson, C.W.; Crowe, K.M.; Haller, E.E.; Rosenblum, S.S.; Brewer, J.H.

    1983-04-01

    Low-temperature measurements of muonium parameters in various germanium crystals have been performed. We have measured crystals with different levels of neutral impurities, with and without dislocations, and with different annealing histories. The most striking result is the apparent trapping of Mu by silicon impurities in germanium

  9. Effect of Impurities on the Triple Point of Water: Experiments with Doped Cells at Different Liquid Fractions

    Science.gov (United States)

    Dobre, M.; Peruzzi, A.; Kalemci, M.; Van Geel, J.; Maeck, M.; Uytun, A.

    2018-05-01

    Recent international comparisons showed that there is still room for improvement in triple point of water (TPW) realization uncertainty. Large groups of cells manufactured, maintained and measured in similar conditions still show a spread in the realized TPW temperature that is larger than the best measurement uncertainties (25 µK). One cause is the time-dependent concentration of dissolved impurities in water. The origin of such impurities is the glass/quartz envelope dissolution during a cell lifetime. The effect is a difference in the triple point temperature proportional to the impurities concentration. In order to measure this temperature difference and to investigate the effect of different types of impurities, we manufactured doped cells with different concentrations of silicon (Si), boron (B), sodium (Na) and potassium (K), the glass main chemical components. To identify any influence of the filling process, two completely independent manufacturing procedures were followed in two different laboratories, both national metrology institutes (VSL, Netherlands and UME, Turkey). Cells glass and filling water were also different while the doping materials were identical. Measuring the temperature difference as a function of the liquid fraction is a method to obtain information about impurities concentrations in TPW. Only cells doped with 1 µmol·mol-1 B, Na and K proved to be suitable for measurements at different liquid fractions. We present here the results with related uncertainties and discuss the critical points in this experimental approach.

  10. The defects produced by electron irradiation in tellurium-doped germanium

    International Nuclear Information System (INIS)

    Fukuoka, Noboru; Saito, Haruo

    1989-01-01

    The nature of the irradiation induced defects in a germanium single crystal doped with tellurium was studied by DLTS and electrical measurements. The E c -0.21 eV level produced by irradiation with 1.5 MeV electrons was studied using the DLTS technique. It was found that the defect associated with this level is a divacancy. The E-center like defect (group V impurity-vacancy pair) introduces the E c -0.20 eV level in samples doped with a group V impurity. The level introduced by a tellurium (group VI impurity)-vacancy pair is deeper. The E c -0.16 eV level was generated by annealing at 430 K. A tellurium-vacancies complex is proposed as the defect associated with this level. (author)

  11. Electronic properties of iron impurity in hcp metals from Moessbauer studies

    International Nuclear Information System (INIS)

    Janot, C.; Delcroix, P.

    1975-01-01

    Moessbauer spectroscopy was used in quantitative investigating the electronic properties of iron impurities in hexagonal close-packed metals. Beryllium of the highest commercially obtainable purity containing about 300 ppm residual impurities was used as a host element. Experimental evidence is given for the existence of localized electronic states which have non-spherical distribution and obviously contribute especially to the electric field gradient. Iron impurity seems to retain the same electronic behaviour as long as the host hcp metal is a normal one (Mg, Cd, Zn), but the localized electronic states seem to disappear when the host is a transition hcp metal (Co, Ti, Sc, Zr, etc.). (Z.S.)

  12. Single-site properties of U impurities doped in La2Zn17 (abstract)

    Science.gov (United States)

    Suzuki, H.; Anzai, K.; Takagi, S.

    1997-04-01

    Thermodynamic and transport properties of heavy Fermion (HF) U compounds show similar behavior to HF Ce compounds. Although most of the magnetic properties of HF Ce compounds can be qualitatively understood on the basis of the impurity Kondo model, no such consensus for HF U compounds has been reached. In addition to this, the single-site properties of U impurities are not understood so well, in contrast to the case of Ce impurities. Recent works for dilute U systems reported new features as are not seen in dilute Ce systems. We have investigated a dilute-U2Zn17 system of (La1-zUz)2Zn17 in order to reveal the single U ion site properties of this system by preparing single crystals. The impurity contributions to various physical quantities such as ρimp(T), χimp(T), and Cimp(T) can be scaled by the U concentration between z=0.025 and 0.05, and the system is considered as in the dilute limit still for z=0.05. The electrical resistivity shows the typical impurity-Kondo upturn at low temperatures. The electronic specific-heat coefficient is strongly enhanced (γimp≈1.5 J/K2 mole U) and about 4 times as large as that for dense U2Zn17. Suppressions of the Kondo effect by the magnetic field are seen in γimp(H) and magnetoresistance. The relatively large anisotropy in χimp(T) indicates an existence of the crystal field. These features of this system will be explained in terms of the Kondo effect in the presence of the crystal field.

  13. Galvanomagnetic properties and electronic structure of iron-doped PbTe

    Energy Technology Data Exchange (ETDEWEB)

    Skipetrov, E. P., E-mail: skip@mig.phys.msu.ru [Faculty of Physics, M.V. Lomonosov Moscow State University, Moscow 119991 (Russian Federation); Faculty of Materials Science, M.V. Lomonosov Moscow State University, Moscow 119991 (Russian Federation); Kruleveckaya, O. V.; Skipetrova, L. A. [Faculty of Physics, M.V. Lomonosov Moscow State University, Moscow 119991 (Russian Federation); Knotko, A. V. [Faculty of Materials Science, M.V. Lomonosov Moscow State University, Moscow 119991 (Russian Federation); Faculty of Chemistry, M.V. Lomonosov Moscow State University, Moscow 119991 (Russian Federation); Slynko, E. I.; Slynko, V. E. [Institute of Materials Science Problems, National Academy of Sciences of Ukraine, Chernivtsy 58001 (Ukraine)

    2015-11-21

    We synthesize an iron-doped PbTe single-crystal ingot and investigate the phase composition and distribution of the iron impurity along the ingot as well as galvanomagnetic properties in weak magnetic fields (4.2 K ≤ T ≤ 300 K, B ≤ 0.07 T) of Pb{sub 1−y}Fe{sub y}Te alloys. We find microscopic inclusions enriched with iron and regions with a chemical composition close to FeTe in the heavily doped samples, while the iron impurity content in the main phase rises only slightly along the length of the ingot reaching the impurity solubility limit at approximately 0.6 mol. %. Samples from the initial and the middle parts of the ingot are characterized by p-type metal conductivity. An increase of the iron impurity content leads to a decrease in the free hole concentration and to a stabilization of galvanomagnetic parameters due to the pinning of the Fermi level by the iron resonant impurity level E{sub Fe} lying under the bottom of the valence band (E{sub v} − E{sub Fe} ≈ 16 meV). In the samples from the end of the ingot, a p-n inversion of the conductivity type and an increase of the free electron concentration along the ingot are revealed despite the impurity solubility limit being reached. The kinetics of changes of charge carrier concentration and of the Fermi energy along the ingot is analyzed in the framework of the six-band Dimmock dispersion relation. A model is proposed for the electronic structure rearrangement of Pb{sub 1−y}Fe{sub y}Te with doping, which may also be used for PbTe doped with other transition metals.

  14. The role of Co impurities and oxygen vacancies in the ferromagnetism of Co-doped SnO2: GGA and GGA+U studies

    International Nuclear Information System (INIS)

    Wang Hongxia; Yan Yu; Mohammed, Y. Sh.; Du Xiaobo; Li Kai; Jin Hanmin

    2009-01-01

    The electronic structure and ferromagnetic stability of Co-doped SnO 2 are studied using the first-principle density functional method within the generalized gradient approximation (GGA) and GGA+U schemes. The addition of effective U Co transforms the ground state of Co-doped SnO 2 to insulating from half-metallic and the coupling between the nearest neighbor Co spins to weak antimagnetic from strong ferromagnetic. GGA+U Co calculations show that the pure substitutional Co defects in SnO 2 cannot induce the ferromagnetism. Oxygen vacancies tend to locate near Co atoms. Their presence increases the magnetic moment of Co and induces the ferromagnetic coupling between two Co spins with large Co-Co distance. The calculated density of state and spin density distribution calculated by GGA+U Co show that the long-range ferromagnetic coupling between two Co spins is mediated by spin-split impurity band induced by oxygen vacancies. More charge transfer from impurity to Co-3d states and larger spin split of Co-3d and impurity states induced by the addition of U Co enhance the ferromagnetic stability of the system with oxygen vacancies. By applying a Coulomb U O on O 2 s orbital, the band gap is corrected for all calculations and the conclusions derived from GGA+U Co calculations are not changed by the correction of band gap.

  15. Crystal and electronic structure study of Mn doped wurtzite ZnO nanoparticles

    Directory of Open Access Journals (Sweden)

    O.M. Ozkendir

    2016-08-01

    Full Text Available The change in the crystal and electronic structure properties of wurtzite ZnO nanoparticles was studied according to Mn doping in the powder samples. The investigations were conducted by X-ray Absorption Fine Structure Spectroscopy (XAFS technique for the samples prepared with different heating and doping processes. Electronic analysis was carried out by the collected data from the X-ray Absorption Near-Edge Structure Spectroscopy (XANES measurements. Additional crystal structure properties were studied by Extended-XAFS (EXAFS analysis. Longer heating periods for the undoped wurtzite ZnO samples were determined to own stable crystal geometries. However, for some doped samples, the distortions in the crystal were observed as a result of the low doping amounts of Mn which was treated as an impurity. Besides, the changes in oxygen locations were determined to create defects and distortions in the samples.

  16. Structural features and electronic properties of group-III-, group-IV-, and group-V-doped Si nanocrystallites

    International Nuclear Information System (INIS)

    Ramos, L E; Degoli, Elena; Cantele, G; Ossicini, Stefano; Ninno, D; Furthmueller, J; Bechstedt, F

    2007-01-01

    We investigate the incorporation of group-III (B and Al), group-IV (C and Ge), and group-V (N and P) impurities in Si nanocrystallites. The structural features and electronic properties of doped Si nanocrystallites, which are faceted or spherical-like, are studied by means of an ab initio pseudopotential method including spin polarization. Jahn-Teller distortions occur in the neighborhood of the impurity sites and the bond lengths show a dependence on size and shape of the nanocrystallites. We find that the acceptor (group-III) and donor (group-V) levels become deep as the nanocrystallites become small. The energy difference between the spin-up and spin-down levels of group-III and group-V impurities decreases as the size of the Si nanocrystallite increases and tends to the value calculated for Si bulk. Doping with carbon introduces an impurity-related level in the energy gap of the Si nanocrystallites

  17. Electron transport in doped fullerene molecular junctions

    Science.gov (United States)

    Kaur, Milanpreet; Sawhney, Ravinder Singh; Engles, Derick

    The effect of doping on the electron transport of molecular junctions is analyzed in this paper. The doped fullerene molecules are stringed to two semi-infinite gold electrodes and analyzed at equilibrium and nonequilibrium conditions of these device configurations. The contemplation is done using nonequilibrium Green’s function (NEGF)-density functional theory (DFT) to evaluate its density of states (DOS), transmission coefficient, molecular orbitals, electron density, charge transfer, current, and conductance. We conclude from the elucidated results that Au-C16Li4-Au and Au-C16Ne4-Au devices behave as an ordinary p-n junction diode and a Zener diode, respectively. Moreover, these doped fullerene molecules do not lose their metallic nature when sandwiched between the pair of gold electrodes.

  18. Enhanced electron/fuel-ion equilibration through impurity ions: Studies applicable to NIF and Omega

    Science.gov (United States)

    Petrasso, R. D.; Sio, H.; Kabadi, N.; Lahmann, B.; Simpson, R.; Parker, C.; Frenje, J.; Gatu Johnson, M.; Li, C. K.; Seguin, F. H.; Rinderknecht, H.; Casey, D.; Grabowski, P.; Graziani, F.; Taitano, W.; Le, A.; Chacon, L.; Hoffman, N.; Kagan, G.; Simakov, A.; Zylstra, A.; Rosenberg, M.; Betti, R.; Srinivasan, B.; Mancini, R.

    2017-10-01

    In shock-driven exploding-pushers, a platform used extensively to study multi-species and kinetic effects, electrons and fuel ions are far out of equilibrium, as reflected by very different temperatures. However, impurity ions, even in small quantities, can couple effectively to the electrons, because of a Z2 dependence, and in turn, impurity ions can then strongly couple to the fuel ions. Through this mechanism, electrons and fuel-ions can equilibrate much faster than they otherwise would. This is a quantitative issue, depending upon the amount and Z of the impurity. For NIF and Omega, we consider the role of this process. Coupled non-linear equations, reflecting the temperatures of the three species, are solved for a range of conditions. Consideration is also given to ablatively driven implosions, since impurities can similarly affect the equilibration. This work was supported in part by DOE/NNSA DE-NA0002949 and DE-NA0002726.

  19. Coupled influence of noise and damped propagation of impurity on linear and nonlinear polarizabilities of doped quantum dots

    International Nuclear Information System (INIS)

    Ganguly, Jayanta; Ghosh, Manas

    2015-01-01

    Highlights: • Linear and nonlinear polarizabilities of quantum dot are studied. • Quantum dot is doped with a repulsive impurity. • Doped system is subject to Gaussian white noise. • Dopant migrates under damped condition. • Noise-damping coupling affects polarizabilities. - Abstract: We investigate the profiles of diagonal components of static and frequency-dependent linear, first, and second nonlinear polarizabilities of repulsive impurity doped quantum dot. We have considered propagation of dopant within an environment that damps the motion. Simultaneous presence of noise inherent to the system has also been considered. The dopant has a Gaussian potential and noise considered is a Gaussian white noise. The doped system is exposed to an external electric field which could be static or time-dependent. Noise undergoes direct coupling with damping and the noise-damping coupling strength appears to be a crucial parameter that designs the profiles of polarizability components. This happens because the coupling strength modulates the dispersive and asymmetric character of the system. The frequency of external field brings about additional features in the profiles of polarizability components. The present investigation highlights some useful features in the optical properties of doped quantum dots

  20. Characteristics of post-disruption runaway electrons with impurity pellet injection

    International Nuclear Information System (INIS)

    Kawano, Yasunori; Nakano, Tomohide; Isayama, Akihiko; Asakura, Nobuyuki; Tamai, Hiroshi; Kubo, Hirotaka; Takenaga, Hidenobu; Bakhtiari, Mohammad; Ide, Shunsuke; Kondoh, Takashi; Hatae, Takaki

    2005-01-01

    Characteristics of post-disruption runaway electrons with impurity pellet injection were investigated for the first time using the JT-60U tokamak device. A clear deposition of impurity neon ice pellets was observed in a post-disruption runaway plasma. The pellet ablation was attributed to the energy deposition of relativistic runaway electrons in the pellet. A high normalized electron density was stably obtained with n e bar /n GW ∼2.2. Effects of prompt exhaust of runaway electrons and reduction of runaway plasma current without large amplitude MHD activities were found. One possible explanation for the basic behavior of runaway plasma current is that it follows the balance of avalanche generation of runaway electrons and slowing down predicted by the Andersson-Helander model, including the combined effect of collisional pitch angle scattering and synchrotron radiation. Our results suggested that the impurity pellet injection reduced the energy of runaway electrons in a stepwise manner. (author)

  1. Influence of hydrogen impurities on p-type resistivity in Mg-doped GaN films

    International Nuclear Information System (INIS)

    Yang, Jing; Zhao, Degang; Jiang, Desheng; Chen, Ping; Zhu, Jianjun; Liu, Zongshun; Le, Lingcong; He, Xiaoguang; Li, Xiaojing; Zhang, Y. T.; Du, G. T.

    2015-01-01

    The effects of hydrogen impurities on p-type resistivity in Mg-doped GaN films were investigated. It was found that hydrogen impurities may have the dual role of passivating Mg Ga acceptors and passivating donor defects. A decrease in p-type resistivity when O 2 is introduced during the postannealing process is attributed to the fact that annealing in an O 2 -containing environment can enhance the dissociation of Mg Ga -H complexes as well as the outdiffusion of H atoms from p-GaN films. However, low H concentrations are not necessarily beneficial in Mg-doped GaN films, as H atoms may also be bound at donor species and passivate them, leading to the positive effect of reduced compensation

  2. GGA+U investigations of impurity d-electrons effects on the electronic and magnetic properties of ZnO

    KAUST Repository

    Ul Haq, Bakhtiar; Ahmed, Rashid; Shaari, Amiruddin; Goumri-Said, Souraya

    2014-01-01

    Stimulation of novel features in ZnO by impurity electrons has attracted a remarkable attention of researchers from the past decade. Consequently, ZnO has found several applications in the field of spintronics and optoelectronics. We report

  3. Structural, electronic and magnetic properties of carbon doped boron nitride nanowire: Ab initio study

    Energy Technology Data Exchange (ETDEWEB)

    Jalilian, Jaafar, E-mail: JaafarJalilian@gmail.com [Young Researchers and Elite Club, Kermanshah Br anch, Islamic Azad University, P.O. Box: 6718997551, Kermanshah (Iran, Islamic Republic of); Kanjouri, Faramarz, E-mail: kanjouri@khu.ac.ir [Physics Department, Faculty of Science, Kharazmi University, University Square, P.O. Box: 3197937551, Karaj (Iran, Islamic Republic of)

    2016-11-15

    Using spin-polarized density functional theory calculations, we demonstrated that carbon doped boron nitride nanowire (C-doped BNNW) has diverse electronic and magnetic properties depending on position of carbon atoms and their percentages. Our results show that only when one carbon atom is situated on the edge of the nanowire, C-doped BNNW is transformed into half-metal. The calculated electronic structure of the C-doped BNNW suggests that doping carbon can induce localized edge states around the Fermi level, and the interaction among localized edge states leads to semiconductor to half-metal transition. Overall, the bond reconstruction causes of appearance of different electronic behavior such as semiconducting, half-metallicity, nonmagnetic metallic, and ferromagnetic metallic characters. The formation energy of the system shows that when a C atom is doped on surface boron site, system is more stable than the other positions of carbon impurity. Our calculations show that C-doped BNNW may offer unique opportunities for developing nanoscale spintronic materials.

  4. Calculation technique of free and impurity ion electronic structures

    International Nuclear Information System (INIS)

    Kulagin, N.A.; Sviridov, D.T.

    1986-01-01

    The monograph deals with calculation technique of free and impurity ion spectra with completed nl N -shell. The principles of the theory of irreducible tensor operators, genealogical coefficients, calculation technique of angular and radial parts of matrix elements operators are stated. The correlation accounting methods in free ions are considered in detail. The principles of the theory of crystal field and ligand field, the method of self-consistent field for impurity ions are reported. The technique efficiency based on example of lanthanum and actinium group ions is shown. Experimental data by nf N -ion spectra are given. The tables of angular coefficients, energy values of X-ray lines of rare earth ions and genealogical coefficients are given in the appendix

  5. Tuning the Electrical and Thermal Conductivities of Thermoelectric Oxides through Impurity Doping

    Science.gov (United States)

    Torres Arango, Maria A.

    Waste heat and thermal gradients available at power plants can be harvested to power wireless networks and sensors by using thermoelectric (TE) generators that directly transform temperature differentials into electrical power. Oxide materials are promising for TE applications in harsh industrial environments for waste heat recovery at high temperatures in air, because they are lightweight, cheaply produced, highly efficient, and stable at high temperatures in air. Ca3Co4O9(CCO) with layered structure is a promising p-type thermoelectric oxide with extrapolated ZT value of 0.87 in single crystal form [1]. However the ZT values for the polycrystalline ceramics remain low of ˜0.1-0.3. In this research, nanostructure engineering approaches including doping and addition of nanoinclusions were applied to the polycrystalline CCO ceramic to improve the energy conversion efficiency. Polycrystalline CCO samples with various Bi doping levels were prepared through the sol-gel chemical route synthesis of powders, pressing and sintering of the pellets. Microstructure features of Bi doped ceramic bulk samples such as porosity, development of crystal texture, grain boundary dislocations and segregation of Bi dopants at various grain boundaries are investigated from microns to atomic scale. The results of the present study show that the Bi-doping is affecting both the electrical conductivity and thermal conductivity simultaneously, and the optimum Bi doping level is strongly correlated with the microstructure and the processing conditions of the ceramic samples. At the optimum doping level and processing conditions of the ceramic samples, the Bi substitution of Ca results in the increase of the electrical conductivity, decrease of the thermal conductivity, and improvement of the crystal texture. The atomic resolution Scanning Transmission Electron Microscopy (STEM) Z-contrast imaging and the chemistry analysis also reveal the Bi-segregation at grain boundaries of CCO

  6. Systematics of electronic and magnetic properties in the transition metal doped Sb2Te3 quantum anomalous Hall platform

    Science.gov (United States)

    Islam, M. F.; Canali, C. M.; Pertsova, A.; Balatsky, A.; Mahatha, S. K.; Carbone, C.; Barla, A.; Kokh, K. A.; Tereshchenko, O. E.; Jiménez, E.; Brookes, N. B.; Gargiani, P.; Valvidares, M.; Schatz, S.; Peixoto, T. R. F.; Bentmann, H.; Reinert, F.; Jung, J.; Bathon, T.; Fauth, K.; Bode, M.; Sessi, P.

    2018-04-01

    The quantum anomalous Hall effect (QAHE) has recently been reported to emerge in magnetically doped topological insulators. Although its general phenomenology is well established, the microscopic origin is far from being properly understood and controlled. Here, we report on a detailed and systematic investigation of transition metal (TM) doped Sb2Te3 . By combining density functional theory calculations with complementary experimental techniques, i.e., scanning tunneling microscopy, resonant photoemission, and x-ray magnetic circular dichroism, we provide a complete spectroscopic characterization of both electronic and magnetic properties. Our results reveal that the TM dopants not only affect the magnetic state of the host material, but also significantly alter the electronic structure by generating impurity-derived energy bands. Our findings demonstrate the existence of a delicate interplay between electronic and magnetic properties in TM doped topological insulators. In particular, we find that the fate of the topological surface states critically depends on the specific character of the TM impurity: while V- and Fe-doped Sb2Te3 display resonant impurity states in the vicinity of the Dirac point, Cr and Mn impurities leave the energy gap unaffected. The single-ion magnetic anisotropy energy and easy axis, which control the magnetic gap opening and its stability, are also found to be strongly TM impurity dependent and can vary from in plane to out of plane depending on the impurity and its distance from the surface. Overall, our results provide general guidelines for the realization of a robust QAHE in TM doped Sb2Te3 in the ferromagnetic state.

  7. Effect of acid leaching conditions on impurity removal from silicon doped by magnesium

    Directory of Open Access Journals (Sweden)

    Stine Espelien

    2017-07-01

    Full Text Available The effect of magnesium addition into a commercial silicon and its leaching refining behavior is studied for producing solar grade silicon feedstock. Two different levels of Mg is added into a commercial silicon and the leaching of the produced alloys by 10% HCl solution at 60 ℃ for different durations is performed. It is shown that the microstructure of the alloy and in particular the distribution of eutectic phases is dependent on the amount of the added Mg. Moreover, the metallic impurities in silicon such as Fe, Al, Ca and Ti are mainly forming silicide particles with different compositions. These silicides are physically more detached from the primary silicon grains and their removal through chemical and physical separation in leaching is better for higher Mg additions. It is observed that the leaching is more effective for the purification of smaller silicon particles produced from each Mg-doped silicon alloy. It is shown that acid leaching by the applied method is effective to reach more than 70% of phosphorous removal. It is also shown that the purity of silicon is dependent on the total Mg removal and effectiveness of leaching on removing the Mg2Si phase.

  8. Modification of the electronic transport in Au by prototypical impurities and interlayers

    KAUST Repository

    Fadlallah, Majida M.; Schuster, Cosima B.; Eckern, Ulrich; Schwingenschlö gl, Udo

    2010-01-01

    Electronic transport calculations for metallic interfaces based on density functional theory and a scattering theory on the Landauer-Büttiker level are presented. We study the modifications of the transport through Au due to prototypical impurities and interlayers. Our results show that the influence of S and Si impurities is well described in terms of simple vacancies. Metallic impurities and interlayers, on the other hand, have even more drastic effects, in particular when the Au s-d hybrid states at the Fermi energy are perturbed. The effects of a possible interface alloy formation are discussed in detail. © 2010 EPLA.

  9. Modification of the electronic transport in Au by prototypical impurities and interlayers

    KAUST Repository

    Fadlallah, Majida M.

    2010-02-01

    Electronic transport calculations for metallic interfaces based on density functional theory and a scattering theory on the Landauer-Büttiker level are presented. We study the modifications of the transport through Au due to prototypical impurities and interlayers. Our results show that the influence of S and Si impurities is well described in terms of simple vacancies. Metallic impurities and interlayers, on the other hand, have even more drastic effects, in particular when the Au s-d hybrid states at the Fermi energy are perturbed. The effects of a possible interface alloy formation are discussed in detail. © 2010 EPLA.

  10. Electronic structures of N- and C-doped NiO from first-principles calculations

    International Nuclear Information System (INIS)

    Long, Run; English, Niall J.; Mooney, Damian A.

    2010-01-01

    The large intrinsic band gap of NiO has hindered severely its potential application under visible-light irradiation. In this Letter, we have performed first-principles calculations on the electronic properties of N- and C-doped NiO to ascertain if its band gap may be narrowed theoretically. It was found that impurity bands driven by N 2p or C 2p states appear in the band gap of NiO and that some of these locate at the conduction band minimum, which leads to a significant band gap narrowing. Our results show that N-doped NiO may serve as a potential photocatalyst relative to C-doped NiO, due to the presence of some recombination centres in C-doped NiO.

  11. Sequential tunneling in doped superlattices: Fingerprints of impurity bands and photon-assisted tunneling

    DEFF Research Database (Denmark)

    Wacker, Andreas; Jauho, Antti-Pekka; Zeuner, S.

    1997-01-01

    the current-voltage characteristics substantially, and we find two different current peaks whose relative height changes with the electron temperature. These findings can explain the observation of different peaks in the current-voltage characteristics with and without external THz irradiation in low......-doped samples. From our microscopic transport model we obtain quantitative agreement with the experimental current-voltage characteristics without using any fitting parameters. Both our experimental data and our theory show that absolute negative conductance persists over a wide range of frequencies of the free...

  12. Structural, electronic properties, and quantum capacitance of B, N and P-doped armchair carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Mousavi-Khoshdel, S. Morteza, E-mail: mmousavi@iust.ac.ir [Department of Chemistry, Iran University of Science and Technology, Tehran (Iran, Islamic Republic of); Jahanbakhsh-bonab, Parisa [Department of Chemistry, Iran University of Science and Technology, Tehran (Iran, Islamic Republic of); Targholi, Ehsan [Young Researchers and Elite Club, Abhar Branch, Islamic Azad University, Abhar (Iran, Islamic Republic of)

    2016-10-07

    Using DFT calculations, we study the structural parameters, electronic properties and quantum capacitance of N, B, and P-doped armchair carbon nanotubes (CNTs). Fermi level shifts towards conduction band and valence band in N- and B-doped CNTs, respectively. While in the case of P atom, despite having an extra valence electron than carbon, there is no shift in Fermi level. The results revealed from a symmetric capacitance enhancement in P-doped CNT and an asymmetric capacitance enhancement in B and N-doped CNTs. The greatest amount of quantum capacitance of N-doped (6, 6) CNT could be achieved at the concentration range of 0.1–0.15. - Highlights: • Exploration of variation in quantum capacitance of CNTs through doping N, B and P atoms. • Quantum capacitance of CNTs is sensitive to impurities entered in carbon nanotubes. • Maximum quantum capacitance of N-doped CNTs is achieved at the concentration range of 0.1–0.15.

  13. Magnetic impurity effect on charge and magnetic order in doped La1.5Ca0.5CoO4

    Science.gov (United States)

    Horigane, K.; Hiraka, H.; Tomiyasu, K.; Ohoyama, K.; Louca, D.; Yamada, K.

    2012-02-01

    Neutron scattering experiments were performed on single crystals of magnetic impurity doped cobalt oxides La1.5Ca0.5CoO4 to characterize the charge and spin orders. We newly found contrasting impurity effects. Two types of magnetic peaks are observed at q = (0.5,0,L) with L = half-integer and integer in La1.5Ca0.5CoO4, while magnetic peak at L = half-integer (integer) was only observed in Mn (Fe)-substituted sample. Although Mn and Fe impurities degrade charge and magnetic order, Cr impurity stabilizes the ordering at x = 0.5. Based on the crystal structural analysis of Cr doped sample, we found that the excess oxygen and change of octahedron around Co3+ were realized in Cr doped sample.

  14. Impurity effects in two-electron coupled quantum dots: entanglement modulation

    International Nuclear Information System (INIS)

    Acosta Coden, Diego S; Romero, Rodolfo H; Ferrón, Alejandro; Gomez, Sergio S

    2013-01-01

    We present a detailed analysis of the electronic and optical properties of two-electron quantum dots with a two-dimensional Gaussian confinement potential. We study the effects of Coulomb impurities and the possibility of manipulating the entanglement of the electrons by controlling the confinement potential parameters. The degree of entanglement becomes highly modulated by both the location and charge screening of the impurity atom, resulting in two regimes: one of low entanglement and the other of high entanglement, with both of them mainly determined by the magnitude of the charge. It is shown that the magnitude of the oscillator strength of the system could provide an indication of the presence and characteristics of impurities and, therefore, the degree of entanglement. (paper)

  15. Electronic transport properties of Ti-impurity band in Si

    Energy Technology Data Exchange (ETDEWEB)

    Olea, J; Gonzalez-Diaz, G; Pastor, D; Martil, I [Departamento de Fisica Aplicada III (Electricidad y Electronica), Facultad de Ciencias, Fisicas, Universidad Complutense, E-28040 Madrid (Spain)

    2009-04-21

    In this paper we show that pulsed laser melted high dose implantation of Ti in Si, above the Mott transition, produces an impurity band (IB) in this semiconductor. Using the van der Pauw method and Hall effect measurements we find strong laminated conductivity at the implanted layer and a temperature dependent decoupling between the Ti implanted layer (TIL) and the substrate. The conduction mechanism from the TIL to the substrate shows blocking characteristics that could be well explained through IB theory. Using the ATLAS code we can estimate the energetic position of the IB at 0.36 eV from the conduction band, the density of holes in this band which is closely related to the Ti atomic density and the hole mobility in this band. Band diagrams of the structure at low and high temperatures are also simulated in the ATLAS framework. The simulation obtained is fully coherent with experimental results.

  16. Electronic transport properties of Ti-impurity band in Si

    International Nuclear Information System (INIS)

    Olea, J; Gonzalez-Diaz, G; Pastor, D; Martil, I

    2009-01-01

    In this paper we show that pulsed laser melted high dose implantation of Ti in Si, above the Mott transition, produces an impurity band (IB) in this semiconductor. Using the van der Pauw method and Hall effect measurements we find strong laminated conductivity at the implanted layer and a temperature dependent decoupling between the Ti implanted layer (TIL) and the substrate. The conduction mechanism from the TIL to the substrate shows blocking characteristics that could be well explained through IB theory. Using the ATLAS code we can estimate the energetic position of the IB at 0.36 eV from the conduction band, the density of holes in this band which is closely related to the Ti atomic density and the hole mobility in this band. Band diagrams of the structure at low and high temperatures are also simulated in the ATLAS framework. The simulation obtained is fully coherent with experimental results.

  17. Isotope effects of trapped electron modes in the presence of impurities in tokamak plasmas

    Science.gov (United States)

    Shen, Yong; Dong, J. Q.; Sun, A. P.; Qu, H. P.; Lu, G. M.; He, Z. X.; He, H. D.; Wang, L. F.

    2016-04-01

    The trapped electron modes (TEMs) are numerically investigated in toroidal magnetized hydrogen, deuterium and tritium plasmas, taking into account the effects of impurity ions such as carbon, oxygen, helium, tungsten and others with positive and negative density gradients with the rigorous integral eigenmode equation. The effects of impurity ions on TEMs are investigated in detail. It is shown that impurity ions have substantially-destabilizing (stabilizing) effects on TEMs in isotope plasmas for {{L}ez}\\equiv {{L}ne}/{{L}nz}>0 (TEM turbulences in hydrogenic isotope plasmas with and without impurities are performed. The relations between the maximum growth rate of the TEMs with respect to the poloidal wave number and the ion mass number are given in the presence of the impurity ions. The results demonstrate that the maximum growth rates scale as {γ\\max}\\propto Mi-0.5 in pure hydrogenic plasmas. The scale depends on the sign of its density gradient and charge number when there is a second species of (impurity) ions. When impurity ions have density profiles peaking inwardly (i.e. {{L}ez}\\equiv {{L}ne}/{{L}nz}>0 ), the scaling also depends on ITG parameter {ηi} . The maximum growth rates scale as {γ\\max}\\propto M\\text{eff}-0.5 for the case without ITG ({ηi}=0 ) or the ITG parameter is positive ({ηi}>0 ) but the impurity ion charge number is low (Z≤slant 5.0 ). However, when {ηi}>0 and the impurity ion charge number is moderate (Z=6.0-8.0 ), the scaling law is found as {γ\\max}\\propto M\\text{eff}-1.0 . Here, Z is impurity ion charge number, and the effective mass number, {{M}\\text{eff}}=≤ft(1-{{f}z}\\right){{M}i}+{{f}z}{{M}z} , with {{M}i} and {{M}Z} being the mass numbers of the hydrogenic and impurity ions, respectively, and {{f}z}=Z{{n}0z}/{{n}0e} being the charge concentration of impurity ions. In addition, with regard to the case of {{L}ez}<0 , the maximum growth rate scaling is {γ\\max}\\propto Mi-0.5 . The possible relations of the results

  18. Hydrogen impurity in SrTiO3: structure, electronic properties and migration

    International Nuclear Information System (INIS)

    Villamagua, Luis; Barreto, Rafael; Procel, Luis Miguel; Stashans, Arvids

    2007-01-01

    The present paper reports a computational investigation of the geometry and electronic structure as well as the migration of a hydrogen impurity in the cubic SrTiO 3 crystal. The study is done using an approach based on the Hartree-Fock theory and developed for periodic systems. It is found that the H impurity forms the so-called OH group at the equilibrium. Analysis of electron density within the defective region implies the enhancement in covalent chemical bonding. A possible defect migration has been also investigated

  19. Hydrogen impurity in SrTiO{sub 3}: structure, electronic properties and migration

    Energy Technology Data Exchange (ETDEWEB)

    Villamagua, Luis [Grupo de Fisica de Cristales, Escuela de Electronica y Telecomunicaciones, Universidad Tecnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador); Barreto, Rafael [Facultad de IngenierIa Civil, Escuela Politecnica Nacional, Apartado 14-01-2759, Quito (Ecuador); Procel, Luis Miguel [Departamento de Quimica, Colegio Politecnico, Universidad San Francisco de Quito, Apartado 17-12-841, Quito (Ecuador); Stashans, Arvids [Grupo de Fisica de Cristales, Escuela de Electronica y Telecomunicaciones, Universidad Tecnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador)

    2007-03-15

    The present paper reports a computational investigation of the geometry and electronic structure as well as the migration of a hydrogen impurity in the cubic SrTiO{sub 3} crystal. The study is done using an approach based on the Hartree-Fock theory and developed for periodic systems. It is found that the H impurity forms the so-called OH group at the equilibrium. Analysis of electron density within the defective region implies the enhancement in covalent chemical bonding. A possible defect migration has been also investigated.

  20. Effect of impurities on the two-dimensional electron gas polarizability

    International Nuclear Information System (INIS)

    Nkoma, J.S.

    1980-06-01

    The polarizability for a two-dimensional electron gas is calculated in the presence of impurities by a Green function formalism. This leads to a system with finite mean free path due to electrons scattering off impurities. The calculated polarizability is found to be strongly dependent on the mean free path. The main feature is the suppression of the sharp corner at wave vector 2ksub(F) for finite mean free paths, and the pure metal result is recovered for the infinite mean free path. A possible application of the results to the transport properties of semiconductor inversion layers is discussed. (author)

  1. The effect of doping with Zn and Ni on the YBa sub 2 Cu sub 3 O sub 7 electron subsystem

    CERN Document Server

    Stolbov, S V

    1997-01-01

    The electron structure, Stoner parameters, and exchange-enhanced local contributions to the spin susceptibility have been calculated for pure, Zn-doped, and Ni-doped YBa sub 2 Cu sub 3 O sub 7 (YBCO7) within the local density approximation, using a self-consistent T-scattering matrix method. It has been found that the Zn impurity causes a breaking of p-d covalence bonds in its vicinity, and gives rise to an island of reduced spin susceptibility and density of states at the Fermi level. This leads to the destruction of spin fluctuations near the impurity. The influence of Ni doping on the YBCO7 electron subsystem is much smaller than that of Zn doping. On the basis of the present results and the spin-fluctuation model, the effects of Zn and Ni doping on the critical temperature and NMR spectra of YBCO7 have been explained. (author)

  2. Combined influence of hydrostatic pressure and temperature on interband emission energy of impurity doped quantum dots in presence of noise

    Energy Technology Data Exchange (ETDEWEB)

    Bera, Aindrila; Ghosh, Manas, E-mail: pcmg77@rediffmail.com

    2016-11-01

    We explore the profiles of interband emission energy (IEE) of impurity doped quantum dots (QDs) under the simultaneous influence of hydrostatic pressure (HP) and temperature (T) and in presence and absence of Gaussian white noise. Noise has been incorporated to the system additively and multiplicatively. In this regard, modulation of IEE by the variation of several other relevant quantities such as electric field, magnetic field, confinement potential, dopant location, dopant potential and aluminium concentration has also been investigated. Gradual alteration of HP and T affects IEE discernibly. Inclusion of noise has been found to enhance or deplete the IEE depending upon its mode of application. Moreover, under given conditions of temperature and pressure, the difference between the impurity-free ground state energy and the binding energy appears to be crucial in determining whether or not the profiles of IEE would resemble that of binding energy. The findings reveal fascinating role played by noise in tailoring the IEE of doped QD system under conspicuous presence of hydrostatic pressure and temperature. - Highlights: • Interband emission energy (IEE) of doped quantum dot is studied. • Hydrostatic pressure (HP) and temperature (T) affect IEE. • The dot is subjected to Gaussian white noise. • Noise amplifies and suppresses IEE depending on particular condition.

  3. Spin-dependent electronic transport properties of transition metal atoms doped α-armchair graphyne nanoribbons

    Science.gov (United States)

    Fotoohi, Somayeh; Haji-Nasiri, Saeed

    2018-04-01

    Spin-dependent electronic transport properties of single 3d transition metal (TM) atoms doped α-armchair graphyne nanoribbons (α-AGyNR) are investigated by non-equilibrium Green's function (NEGF) method combined with density functional theory (DFT). It is found that all of the impurity atoms considered in this study (Fe, Co, Ni) prefer to occupy the sp-hybridized C atom site in α-AGyNR, and the obtained structures remain planar. The results show that highly localized impurity states are appeared around the Fermi level which correspond to the 3d orbitals of TM atoms, as can be derived from the projected density of states (PDOS). Moreover, Fe, Co, and Ni doped α-AGyNRs exhibit magnetic properties due to the strong spin splitting property of the energy levels. Also for each case, the calculated current-voltage characteristic per super-cell shows that the spin degeneracy in the system is obviously broken and the current becomes strongly spin dependent. Furthermore, a high spin-filtering effect around 90% is found under the certain bias voltages in Ni doped α-AGyNR. Additionally, the structure with Ni impurity reveals transfer characteristic that is suitable for designing a spin current switch. Our findings provide a high possibility to design the next generation spin nanodevices with novel functionalities.

  4. XAS study of the local environment of impurities in doped TiO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez Torres, C.E. [Departamento de Fisica e IFLP (CONICET), Facultad de Ciencias Exactas, Universidad Nacional de La Plata (Argentina)]. E-mail: torres@fisica.unlp.edu.ar; Cabrera, A.F. [Departamento de Fisica e IFLP (CONICET), Facultad de Ciencias Exactas, Universidad Nacional de La Plata (Argentina); Errico, L.A. [Departamento de Fisica e IFLP (CONICET), Facultad de Ciencias Exactas, Universidad Nacional de La Plata (Argentina); Duhalde, S. [Lab. de Ablacion Laser, FI-UBA (Argentina); Renteria, M. [Departamento de Fisica e IFLP (CONICET), Facultad de Ciencias Exactas, Universidad Nacional de La Plata (Argentina); Golmar, F. [Lab. de Ablacion Laser, FI-UBA (Argentina); Sanchez, F.H. [Departamento de Fisica e IFLP (CONICET), Facultad de Ciencias Exactas, Universidad Nacional de La Plata (Argentina)

    2007-09-01

    In this work, we present an X-ray absorption spectroscopy (XAS) characterization of the local environment of the impurity in room temperature ferromagnetic (RTF) anatase TiO{sub 2} thin films doped with Co, Ni, Cu, or Zn, deposited on LaAlO{sub 3} substrate by pulsed laser deposition (PLD). It was found that there is a considerable amount of impurity atoms substituting Ti in TiO{sub 2} anatase, although the presence of metal transition monoxide clusters can not be discarded. From our results, we infer that the observed RT ferromagnetism of the samples could be assigned to the metal transition atoms replacing Ti in TiO{sub 2} anatase.

  5. Effect of killer impurities on laser-excited barium-doped ZnS phosphors at liquid nitrogen temperature

    Science.gov (United States)

    Kumar, Sunil; Verma, N. K.; Bhatti, H. S.

    Zinc sulphide phosphors doped with Ba, as well as killer impurities of Fe, Co and Ni, having variable concentrations, were synthesized; and using an ultraviolet laser as the excitation source, decay-curve analyses were done. Various strong emissions in these phosphors were detected and the corresponding excited-state life times were measured at liquid nitrogen temperature. Studies were carried out to see the effect of killer impurities on the phosphorescence excited-state life times. Excited-state life times were found to decrease appreciably (microsecond to nanosecond) with the addition of quenchers. These studies are quite useful and find applications in areas such as optical memories, sensors, luminescent screens, laser-beam detection and alignment, color displays, printing, etc.

  6. Use of nonlocal helium microplasma for gas impurities detection by the collisional electron spectroscopy method

    Energy Technology Data Exchange (ETDEWEB)

    Kudryavtsev, Anatoly A., E-mail: akud@ak2138.spb.edu [St. Petersburg State University, 7-9 Universitetskaya nab., 199034 St. Petersburg (Russian Federation); Stefanova, Margarita S.; Pramatarov, Petko M. [Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee blvd., 1784 Sofia (Bulgaria)

    2015-10-15

    The collisional electron spectroscopy (CES) method, which lays the ground for a new field for analytical detection of gas impurities at high pressures, has been verified. The CES method enables the identification of gas impurities in the collisional mode of electron movement, where the advantages of nonlocal formation of the electron energy distribution function (EEDF) are fulfilled. Important features of dc negative glow microplasma and probe method for plasma diagnostics are applied. A new microplasma gas analyzer design is proposed. Admixtures of 0.2% Ar, 0.6% Kr, 0.1% N{sub 2}, and 0.05% CO{sub 2} are used as examples of atomic and molecular impurities to prove the possibility for detecting and identifying their presence in high pressure He plasma (50–250 Torr). The identification of the particles under analysis is made from the measurements of the high energy part of the EEDF, where maxima appear, resulting from the characteristic electrons released in Penning reactions of He metastable atoms with impurity particles. Considerable progress in the development of a novel miniature gas analyzer for chemical sensing in gas phase environments has been made.

  7. Structure, electronic and magnetic properties of Ca-doped chromium oxide studied by the DFT method

    International Nuclear Information System (INIS)

    Maldonado, Frank; Rivera, Richard; Stashans, Arvids

    2012-01-01

    Using first-principles density functional theory calculations within the generalised gradient approximation (GGA) as well as GGA+U method we study Ca-doped α-Cr 2 O 3 crystal. Structural, electronic and magnetic properties due to the singular impurity incorporation have been investigated and discussed in detail. Atomic shifts as well as computed Bader charges on atoms imply the importance of ionic nature in the atomic interactions in chromium oxide. The study improves our knowledge on how the crystalline lattice reacts on the presence of a Ca dopant. According to our research it is found that Ca impurity incorporation produces some local changes upon the electronic band structure of the material without occurrence of local states within the band-gap. It is found that Ca incorporation produces change in magnetic behaviour of the crystal: it becomes ferromagnetic.

  8. Structure, electronic and magnetic properties of Ca-doped chromium oxide studied by the DFT method

    Energy Technology Data Exchange (ETDEWEB)

    Maldonado, Frank; Rivera, Richard [Grupo de Fisicoquimica de Materiales, Universidad Tecnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador); Stashans, Arvids, E-mail: arvids@utpl.edu.ec [Grupo de Fisicoquimica de Materiales, Universidad Tecnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador)

    2012-04-15

    Using first-principles density functional theory calculations within the generalised gradient approximation (GGA) as well as GGA+U method we study Ca-doped {alpha}-Cr{sub 2}O{sub 3} crystal. Structural, electronic and magnetic properties due to the singular impurity incorporation have been investigated and discussed in detail. Atomic shifts as well as computed Bader charges on atoms imply the importance of ionic nature in the atomic interactions in chromium oxide. The study improves our knowledge on how the crystalline lattice reacts on the presence of a Ca dopant. According to our research it is found that Ca impurity incorporation produces some local changes upon the electronic band structure of the material without occurrence of local states within the band-gap. It is found that Ca incorporation produces change in magnetic behaviour of the crystal: it becomes ferromagnetic.

  9. IMPURITY SEGREGATION OF STAINLESS STEEL STUDIED BY ATOM-PROBE AND AUGER ELECTRON SPECTROSCOPY

    OpenAIRE

    Koguchi , Y.; Takahashi , K.; Ishikawa , Y.

    1987-01-01

    The surface compositions of type 304 stainless steel heated in vacuum at 600-900°C were determined by an atom-probe and Auger electron spectroscopic analysis. In addition to enrichment and depletion of alloying elements in the surface of the stainless steel, segregation of impurity elements such as carbon, nitrogen, phosphorus and sulfur is known to occur. In this paper the atom-probe was used to measure the impurity segregation in the grains as well as in the grain boundary while the AES was...

  10. Electron tunneling into superconducting indium and lead films containing the magnetic impurity manganese

    International Nuclear Information System (INIS)

    Tsang, J.K.

    1980-01-01

    Tunneling measurements of quench-condensed In-Mn and Pb-Mn alloy films were made. The results were compared with Shiba's theory of superconductors containing magnetic impurities. The localized excited impurity states predicted by Shiba's theory were observed in both alloys. In addition to s-wave scattering, it was necessary to include p- and d-wave scattering of the conduction electrons in the theory in order to explain the experimental data. Partial agreement between the theory and the experimental data was obtained using phase shifts from band calculations by A.B. Kunz. The results on In-Mn also agree with thermal conductivity data

  11. MOS Capacitance—Voltage Characteristics II. Sensitivity of Electronic Trapping at Dopant Impurity from Parameter Variations

    International Nuclear Information System (INIS)

    Jie Binbin; Sah Chihtang

    2011-01-01

    Low-frequency and high-frequency Capacitance—Voltage (C—V) curves of Metal—Oxide—Semiconductor Capacitors (MOSC), including electron and hole trapping at the dopant donor and acceptor impurities, are presented to illustrate giant trapping capacitances, from > 0.01C OX to > 10C OX . Five device and materials parameters are varied for fundamental trapping parameter characterization, and electrical and optical signal processing applications. Parameters include spatially constant concentration of the dopant-donor-impurity electron trap, N DD , the ground state electron trapping energy level depth measured from the conduction band edge, E C –E D , the degeneracy of the trapped electron at the ground state, g D , the device temperature, T, and the gate oxide thickness, x OX . (invited papers)

  12. GGA+U investigations of impurity d-electrons effects on the electronic and magnetic properties of ZnO

    KAUST Repository

    Ul Haq, Bakhtiar

    2014-08-01

    Stimulation of novel features in ZnO by impurity electrons has attracted a remarkable attention of researchers from the past decade. Consequently, ZnO has found several applications in the field of spintronics and optoelectronics. We report, the effect of 3d-(V, Ag) electrons on the properties of ZnO in stable wurtzite (WZ) and metastable zincblende (ZB) phase using the density functional theory. Introduction of V-3d electrons was found to induce a high magnetic moment value of 5.22 in WZ and 3.26 in the ZB phase, and moreover transform the semiconductor character of ZnO into a metallic nature. Ag-d electrons result in the p-type half-metallic nature of ZnO with a weak ferromagnetic background. Our calculations for ground-state magnetic ordering show that ZnO in the presence of impure 3d-(V, Ag) electrons favors ferromagnetic ordering, and obey the double exchange mechanism. However, impurity atoms have very marginal effect on the lattice parameters of ZnO, thereby exposing its potential to absorb the impurity atoms in high concentration. © 2014 Elsevier B.V. All rights reserved.

  13. Experimental study of electron temperature gradient influence on impurity turbulent transport in fusion plasmas

    International Nuclear Information System (INIS)

    Villegas, D.

    2010-01-01

    Understanding impurity transport is a key to an optimal regime for a future fusion device. In this thesis, the theoretical and experimental influence of the electron temperature gradient R/L Te on heavy impurity transport is analyzed both in Tore Supra and ASDEX Upgrade. The electron temperature profile is modified locally by heating the plasma with little ECRH power deposited at two different radii. Experimental results have been obtained with the impurity transport code (ITC) which has been completed with a genetic algorithm allowing to determine the transport coefficient profiles with more accuracy. Transport coefficient profiles obtained by a quasilinear gyrokinetic code named QuaLiKiz are consistent with the experimental ones despite experimental uncertainties on gradients. In the core dominated by electron modes, the lower R/L Te the lower the nickel diffusion coefficient. The latter tends linearly to the neoclassical level when the instability threshold is approached. The experimental threshold is in agreement with the one computed by QuaLiKiz. Further out, where the plasma is dominated by ITG, which are independent of R/L Te , both experimental and simulated results show no modification in the diffusion coefficient profile. Furthermore, the convection velocity profile is not modified. This is attributed to a very small contribution of the thermodiffusion (1/Z dependence) in the total convection. On ASDEX, the preliminary results, very different from the Tore Supra ones, show a internal transport barrier for impurities located at the same radius as the strong ECRH power deposit. (author) [fr

  14. Growth and Structural, Magnetic, and Magnetooptical Properties of ZnO Films Doped with a Fe57 3 d Impurity

    Science.gov (United States)

    Mezdrogina, M. M.; Aglikov, A. S.; Semenov, V. G.; Kozhanova, Yu. V.; Nefedov, S. G.; Shelukhin, L. A.; Pavlov, V. V.

    2018-03-01

    ZnO films obtained by high-frequency magnetron sputtering and doped with a Fe57 metallic 3 d impurity by the diffusion method are studied. The type of local environment of Fe57 impurity atoms on varying the deposition parameters of ZnO films is determined by Mössbauer spectroscopy. It is established that the ground state of Fe57 impurity atoms corresponds to metallic iron in the magnetically ordered state and there is a small fraction of Fe57 atoms with a local environment corresponding to the complex oxide Fe3O4, having the magnetically ordered state; there is also a fraction of iron atoms in the paramagnetic state. The magnetic and magnetooptical parameters of the films were measured using magnetooptic Kerr effect. The spectral dependences of the polar magnetooptic Kerr effect in ZnO(Fe57) films are measured in a photon energy range of 1.5-4.5 eV and simulated by the effective-medium method. It is established that ZnO(Fe57) possess an easy-plane magnetic anisotropy with a magnetization lying in the film plane.

  15. Effect of annealing and impurity concentration on the TL characteristics of nanocrystalline Mn-doped CaF2

    International Nuclear Information System (INIS)

    Sahare, P.D.; Singh, Manveer; Kumar, Pratik

    2015-01-01

    Nanocrystalline samples of Mn-doped CaF 2 were synthesized by chemical coprecipitation method. The impurity concentration was varied in the range of 0.5–4.0 mol%. The structure of the synthesized material was confirmed using powder XRD analysis. TEM images of the nanoparticles show their size occurring mostly in the range of 35–40 nm, with clusters of some impurity phases formed on annealing of the material at higher temperatures. Detailed studies on TL showed that the structures of glow curves depend on Mn concentrations and annealing temperatures. Optimization of the concentration and annealing temperature showed that the sample (doped with 3.0 mol% and annealed at 673 K) has almost a single dosimetric glow peak appearing at around 492 K. EPR and PL spectra were further studied to understand the reasons for changes in the glow curve structures. All detailed studies on TL, PL and EPR showed that the changes in glow curve structures are caused not only by the stress connected with the difference in ionic radii of host Ca 2+ and the guest impurity Mn 3+ /Mn 2+ , but are also governed by other reasons, like diffusion of atmospheric oxygen and formation of impurity aggregates, such as, MnO 2 , Mn 3 O 4 , etc. This is true not only for nanocrystalline CaF 2 :Mn but could also be so for the bulk CaF 2 :Mn (TLD-400) and would thus help in understanding complex glow curve structure, high fading and the loss of reusability on annealing beyond 673 K. - Highlights: • Nanocrystalline material CaF 2 :Mn is prepared by simple coprecipitation method. • The material is studied by XRD, TEM, ESR, TL and PL techniques. • High impurity concentrations give rise to clusters causing material instability. • Changes in ESR and PL and glow curve structures are studied and explained. • Better characteristics than the bulk make the nanophosphor useful for dosimetry

  16. The role of electronic dopant on full band in-plane RKKY coupling in armchair graphene nanoribbons-magnetic impurity system

    Science.gov (United States)

    Hoi, Bui Dinh; Yarmohammadi, Mohsen

    2018-05-01

    Motivated by the growing interest in solving the obstacles of spintronics applications, we study the Ruderman-Kittel-Kasuya-Yosida (RKKY) effective pairwise interaction between magnetic impurities interacting through the π -electrons embedded in both electronically doped-semiconducting and metallic armchair graphene nanoribbons. In terms of the Green's function formalism, treated in a tight-binding approximation with hopping beyond Dirac cone approximation, the RKKY coupling is an attraction or a repulsion depending on the magnetic impurities distances. Our results show that the RKKY coupling in semiconducting nanoribbons is much more affected by doping than metallic ones. Furthermore, we found that the RKKY coupling increases with ribbon width, while there exist some critical electronic concentrations in RKKY interaction oscillations. On the other hand, we find an unusual incoming wave-vector direction for electrons which describes more clearly the ferro- and antiferromagnetic spin configurations in such system. Also, the RKKY coupling at low and high-temperature regions has been addressed for both ferro- and antiferromagnetic spin arrangements.

  17. Observation of point defects in impurity-doped zinc selenide films using a monoenergetic positron beam

    International Nuclear Information System (INIS)

    Miyajima, T.; Okuyama, H.; Akimoto, K.; Mori, Y.; Wei, L.; Tanigawa, S.

    1992-01-01

    We studied point defects in ZnSe films grown by molecular beam epitaxy using the positron annihilation method. We found that doping with Ga atoms induces vacancy-type defects such as Zn vacancies, and that heavy doping with oxygen atoms induces interstitial type defects. We think that these defects are one of the causes of active carrier saturation in doped ZnSe films. (author)

  18. Impurity with two electrons in the spherical quantum dot with Unite confinement potential

    International Nuclear Information System (INIS)

    Baghdasaryan, D A; Ghaltaghchyan, H Ts; Kazaryan, E M; Sarkisyan, H A

    2016-01-01

    Two-electron states in a spherical QD with the hydrogenic impurity located in the center and with a finite height confinement potential barrier are investigated. The effective mass mismatch have been taken into account. The dependence of ground state energy and Coulomb electron-electron interaction energy correction on the QD size is studied. The problem of the state exchange time control in QD is discussed, taking into account the spins of the electrons in the Russell-Saunders approximation. The effect of quantum emission has been shown. (paper)

  19. Analysis of optical band-gap shift in impurity doped ZnO thin films by using nonparabolic conduction band parameters

    International Nuclear Information System (INIS)

    Kim, Won Mok; Kim, Jin Soo; Jeong, Jeung-hyun; Park, Jong-Keuk; Baik, Young-Jun; Seong, Tae-Yeon

    2013-01-01

    Polycrystalline ZnO thin films both undoped and doped with various types of impurities, which covered the wide carrier concentration range of 10 16 –10 21 cm −3 , were prepared by magnetron sputtering, and their optical-band gaps were investigated. The experimentally measured optical band-gap shifts were analyzed by taking into account the carrier density dependent effective mass determined by the first-order nonparabolicity approximation. It was shown that the measured shifts in optical band-gaps in ZnO films doped with cationic dopants, which mainly perturb the conduction band, could be well represented by theoretical estimation in which the band-gap widening due to the band-filling effect and the band-gap renormalization due to the many-body effect derived for a weakly interacting electron-gas model were combined and the carrier density dependent effective mass was incorporated. - Highlights: ► Optical band-gaps of polycrystalline ZnO thin films were analyzed. ► Experimental carrier concentration range covered from 10 16 to 10 21 cm −3 . ► Nonparabolic conduction band parameters were used in theoretical analysis. ► The band-filling and the band-gap renormalization effects were considered. ► The measured optical band-gap shifts corresponded well with the calculated ones

  20. Hydrogen passivation of titanium impurities in silicon: Effect of doping conditions

    Energy Technology Data Exchange (ETDEWEB)

    Santos, P.; Coutinho, J., E-mail: jose.coutinho@ua.pt; Torres, V. J. B. [Department of Physics and I3N, University of Aveiro, Campus Santiago, 3810-193 Aveiro (Portugal); Rayson, M. J. [Department of Chemistry, University of Surrey, Guildford GU2 7XH (United Kingdom); Briddon, P. R. [School of Electrical, Electronic and Computer Engineering, Newcastle University, Newcastle Upon Tyne NE1 7RU (United Kingdom)

    2014-07-21

    While the contamination of solar silicon by fast diffusing transition metals can be now limited through gettering, much attention has been drawn to the slow diffusing species, especially the early 3d and 4d elements. To some extent, hydrogen passivation has been successful in healing many deep centers, including transition metals in Si. Recent deep-level transient spectroscopy (DLTS) measurements concerning hydrogen passivation of Ti revealed the existence of at least four electrical levels related to Ti{sub i}H{sub n} in the upper-half of the gap. These findings challenge the existing models regarding both the current level assignment as well as the structure/species involved in the defects. We revisit this problem by means of density functional calculations and find that progressive hydrogenation of interstitial Ti is thermodynamically stable in intrinsic and n-doped Si. Full passivation may not be possible to attain in p-type Si as Ti{sub i}H{sub 3} and Ti{sub i}H{sub 4} are metastable against dissociation and release of bond-centered protons. All DLTS electron traps are assigned, namely, E40′ to Ti{sub i}H(-/0), E170′ to Ti{sub i}H{sub 3}(0/+), E(270) to Ti{sub i}H{sub 2}(0/+), and E170 to Ti{sub i}H(0/+) transitions. Ti{sub i}H{sub 4} is confirmed to be electrically inert.

  1. Electronic and optical properties of Y-doped Si{sub 3}N{sub 4} by density functional theory

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Zhifeng [State Key Lab of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Chen, Fei, E-mail: chenfei027@gmail.com [State Key Lab of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Key Laboratory of Advanced Technology for Specially Functional Materials, Ministry of Education, Wuhan University of Technology, Wuhan 430070 (China); Su, Rui; Wang, Zhihao; Li, Junyang; Shen, Qiang [State Key Lab of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Zhang, Lianmeng [State Key Lab of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Key Laboratory of Advanced Technology for Specially Functional Materials, Ministry of Education, Wuhan University of Technology, Wuhan 430070 (China)

    2015-07-15

    Highlights: • Y-doped α-Si{sub 3}N{sub 4} and β-Si{sub 3}N{sub 4} are systematically investigated by DFT. • Impacts of local structure and bond character on electronic property are studied. • Static dielectric constants and optical absorption properties are investigated. - Abstract: Geometry structures, formation energies, electronic and optical properties of Y-doped α-Si{sub 3}N{sub 4} and β-Si{sub 3}N{sub 4} are investigated based on the density functional theory (DFT). The low values of formation energies indicate both Y-doped Si{sub 3}N{sub 4} models can be easily synthesized. Besides, the negative formation energies of α-Y{sub i}-Si{sub 3}N{sub 4} demonstrate that interstitial Y-doped α-Si{sub 3}N{sub 4} has an excellent stability. The energies of impurity levels are different resulting from the different chemical environment around Y atoms. The impurity levels localized in the band gap reduces the maximum energy gaps, which enhances the optical properties of Si{sub 3}N{sub 4}. The static dielectric constants become larger and the optical absorption spectra show the red-shift phenomena for all Y-doped Si{sub 3}N{sub 4} models.

  2. Synthesis of diamonds in Fe–C systems using nitrogen and hydrogen co-doped impurities under HPHT

    International Nuclear Information System (INIS)

    Sun Shi-Shuai; Xu Zhi-Hui; Cui Wen; Jia Xiao-Peng; Ma Hong-An

    2017-01-01

    In this study, we investigate the effect of nitrogen and hydrogen impurities on colors, morphologies, impurity structures and synthesis conditions of diamond crystals in Fe–C systems with C 3 N 6 H 6 additives at pressures in the range 5.0–6.5 GPa and temperatures of 1400–1700 °C in detail. Our results reveal that the octahedron diamond nucleation in a Fe–C system is evidently inhibited by co-doped N–H elements, thereby resulting in the increase of minimum pressure and temperature of diamond synthesis by spontaneous nucleation. The octahedron diamond crystals synthesized from a pure Fe–C system are colorless, while they become green in the system with C 3 N 6 H 6 additive. The surface defects of diamond will deteriorate when the nitrogen and hydrogen atoms simultaneously incorporate in the diamond growth environment in the Fe–C system. We believe that this study will provide some important information and be beneficial for the deep understanding of the crystallization of diamonds from different component systems. (paper)

  3. Projection-reduction method applied to deriving non-linear optical conductivity for an electron-impurity system

    Directory of Open Access Journals (Sweden)

    Nam Lyong Kang

    2013-07-01

    Full Text Available The projection-reduction method introduced by the present authors is known to give a validated theory for optical transitions in the systems of electrons interacting with phonons. In this work, using this method, we derive the linear and first order nonlinear optical conductivites for an electron-impurity system and examine whether the expressions faithfully satisfy the quantum mechanical philosophy, in the same way as for the electron-phonon systems. The result shows that the Fermi distribution function for electrons, energy denominators, and electron-impurity coupling factors are contained properly in organized manners along with absorption of photons for each electron transition process in the final expressions. Furthermore, the result is shown to be represented properly by schematic diagrams, as in the formulation of electron-phonon interaction. Therefore, in conclusion, we claim that this method can be applied in modeling optical transitions of electrons interacting with both impurities and phonons.

  4. Behaviour of the electron density near an impurity with exchange and correlation

    International Nuclear Information System (INIS)

    Adawi, I.; Godwin, V.E.

    1982-09-01

    The behaviour of the electron density n(r) and potential energy V(r) near an impurity of charge Z is studied in the linear response theory of metals with exchange and correlation. The leading two terms in nsub(odd)(r) and the first three terms in Vsub(odd)(r) are the same as in the Lindhard theory, but corrections appear in the higher terms of the odd powers expansions of these functions. In all quantum linear response theories, the derivative n'(0)=-2Zn 0 /a 0 where n 0 is the free electron gas density and a 0 is the Bohr radius. (author)

  5. Impurity segregation behavior in polycrystalline silicon ingot grown with variation of electron-beam power

    Science.gov (United States)

    Lee, Jun-Kyu; Lee, Jin-Seok; Jang, Bo-Yun; Kim, Joon-Soo; Ahn, Young-Soo; Cho, Churl-Hee

    2014-08-01

    Electron beam melting (EBM) systems have been used to improve the purity of metallurgical grade silicon feedstock for photovoltaic application. Our advanced EBM system is able to effectively remove volatile impurities using a heat source with high energy from an electron gun and to continuously allow impurities to segregate at the top of an ingot solidified in a directional solidification (DS) zone in a vacuum chamber. Heat in the silicon melt should move toward the ingot bottom for the desired DS. However, heat flux though the ingot is changed as the ingot becomes longer due to low thermal conductivity of silicon. This causes a non-uniform microstructure of the ingot, finally leading to impurity segregation at its middle. In this research, EB power irradiated on the silicon melt was controlled during the ingot growth in order to suppress the change of heat flux. EB power was reduced from 12 to 6.6 kW during the growth period of 45 min with a drop rate of 0.125 kW/min. Also, the silicon ingot was grown under a constant EB power of 12 kW to estimate the effect of the drop rate of EB power. When the EB power was reduced, the grains with columnar shape were much larger at the middle of the ingot compared to the case of constant EB power. Also, the present research reports a possible reason for the improvement of ingot purity by considering heat flux behaviors.

  6. Positron annihilation study of Pd contacts on impurity-doped GaN

    International Nuclear Information System (INIS)

    Lee, Jong-Lam; Kim, Jong Kyu; Weber, Marc H.; Lynn, Kelvin G.

    2001-01-01

    Pd contacts on both n-type and p-type GaN were studied using positron annihilation spectroscopy, and the results were used to interpret the role of Ga vacancies on the band bending below the contacts. The concentration of Ga vacancy in Si-doped GaN was higher than that in the Mg-doped one. In Si-doped GaN, implanted positrons were annihilated at the nearer surface region and the interface of Pd/n-type GaN was detected by positrons clearly shifted toward the surface of Pd. This suggests that Ga vacancies could act as an interface state, pinning the Fermi level at the interface of Pd with GaN, leading to the production of a negative electric field below the interface. [copyright] 2001 American Institute of Physics

  7. Electronic structure of chromium-doped lead telluride-based diluted magnetic semiconductors

    International Nuclear Information System (INIS)

    Skipetrov, E.P.; Pichugin, N.A.; Slyn'ko, E.I.; Slyn'ko, V.E.

    2011-01-01

    The crystal structure, composition, galvanomagnetic and oscillatory properties of the Pb 1-x-y Sn x Cr y Te (x = 0, 0.05-0.30, y ≤ 0.01) alloys have been investigated with varying matrix composition and chromium impurity concentration. It is shown that the chromium impurity atoms dissolve in the crystal lattice at least up to 1 mol.%. The following increase of the chromium concentration leads to the appearance of microscopic regions enriched with chromium and inclusions of Cr-Te compounds. A decrease of the hole concentration, a p-n-conversion of the conductivity type and a pinning of the Fermi level by the chromium resonant level are observed with increasing chromium content. Initial rates of changes in the free carrier concentration on doping are determined. The dependences of electron concentration and Fermi level on tin content are calculated by the two-band Kane dispersion relation. A diagram of electronic structure rearrangement for the chromium-doped alloys with varying the matrix composition is proposed.

  8. Simultaneous influence of hydrostatic pressure and temperature on diamagnetic susceptibility of impurity doped quantum dots under the aegis of noise

    International Nuclear Information System (INIS)

    Saha, Surajit; Ganguly, Jayanta; Bera, Aindrila; Ghosh, Manas

    2016-01-01

    Highlights: • Diamagnetic susceptibility (DMS) of doped quantum dot is studied. • Hydrostatic pressure (HP) and temperature (T) affect DMS. • The dot is subjected to Gaussian white noise. • DMS also depends on mode of application of noise. - Abstract: We explore the diamagnetic susceptibility (DMS) of impurity doped quantum dot (QD) in presence of Gaussian white noise and under the combined influence of hydrostatic pressure (HP) and temperature (T). Presence of noise and also its mode of application discernibly affect the DMS profile. Application of HP and T invites greater delicacies in the observed DMS profiles. However, whereas the interplay between T and noise comes out to be extremely sensitive in fabricating the DMS profile, the pressure-noise interplay appears to be not that much noticeable. Under all conditions of temperature and pressure, the presence of multiplicative noise diminishes the value of DMS in comparison with that in presence of its additive analogue. The present study renders a deep insight into the remarkable role played by the interplay between noise, hydrostatic pressure and temperature in controlling the effective confinement imposed on the system which bears unquestionable relevance.

  9. Simultaneous influence of hydrostatic pressure and temperature on diamagnetic susceptibility of impurity doped quantum dots under the aegis of noise

    Energy Technology Data Exchange (ETDEWEB)

    Saha, Surajit [Department of Chemistry, Physical Chemistry Section, Visva Bharati University, Santiniketan, Birbhum 731 235, West Bengal (India); Ganguly, Jayanta [Department of Chemistry, Brahmankhanda Basapara High School, Basapara, Birbhum 731215, West Bengal (India); Bera, Aindrila [Department of Chemistry, Physical Chemistry Section, Visva Bharati University, Santiniketan, Birbhum 731 235, West Bengal (India); Ghosh, Manas, E-mail: pcmg77@rediffmail.com [Department of Chemistry, Physical Chemistry Section, Visva Bharati University, Santiniketan, Birbhum 731 235, West Bengal (India)

    2016-11-30

    Highlights: • Diamagnetic susceptibility (DMS) of doped quantum dot is studied. • Hydrostatic pressure (HP) and temperature (T) affect DMS. • The dot is subjected to Gaussian white noise. • DMS also depends on mode of application of noise. - Abstract: We explore the diamagnetic susceptibility (DMS) of impurity doped quantum dot (QD) in presence of Gaussian white noise and under the combined influence of hydrostatic pressure (HP) and temperature (T). Presence of noise and also its mode of application discernibly affect the DMS profile. Application of HP and T invites greater delicacies in the observed DMS profiles. However, whereas the interplay between T and noise comes out to be extremely sensitive in fabricating the DMS profile, the pressure-noise interplay appears to be not that much noticeable. Under all conditions of temperature and pressure, the presence of multiplicative noise diminishes the value of DMS in comparison with that in presence of its additive analogue. The present study renders a deep insight into the remarkable role played by the interplay between noise, hydrostatic pressure and temperature in controlling the effective confinement imposed on the system which bears unquestionable relevance.

  10. Electronic structure and magnetic properties of dilute U impurities in metals

    Science.gov (United States)

    Mohanta, S. K.; Cottenier, S.; Mishra, S. N.

    2016-05-01

    The electronic structure and magnetic moment of dilute U impurity in metallic hosts have been calculated from first principles. The calculations have been performed within local density approximation of the density functional theory using Augmented plane wave+local orbital (APW+lo) technique, taking account of spin-orbit coupling and Coulomb correlation through LDA+U approach. We present here our results for the local density of states, magnetic moment and hyperfine field calculated for an isolated U impurity embedded in hosts with sp-, d- and f-type conduction electrons. The results of our systematic study provide a comprehensive insight on the pressure dependence of 5f local magnetism in metallic systems. The unpolarized local density of states (LDOS), analyzed within the frame work of Stoner model suggest the occurrence of local moment for U in sp-elements, noble metals and f-block hosts like La, Ce, Lu and Th. In contrast, U is predicted to be nonmagnetic in most transition metal hosts except in Sc, Ti, Y, Zr, and Hf consistent with the results obtained from spin polarized calculation. The spin and orbital magnetic moments of U computed within the frame of LDA+U formalism show a scaling behavior with lattice compression. We have also computed the spin and orbital hyperfine fields and a detail analysis has been carried out. The host dependent trends for the magnetic moment, hyperfine field and 5f occupation reflect pressure induced change of electronic structure with U valency changing from 3+ to 4+ under lattice compression. In addition, we have made a detailed analysis of the impurity induced host spin polarization suggesting qualitatively different roles of f-band electrons on moment stability. The results presented in this work would be helpful towards understanding magnetism and spin fluctuation in U based alloys.

  11. Electron exchange between neutral and ionized impurity iron centers in vitreous arsenic selenide

    Energy Technology Data Exchange (ETDEWEB)

    Marchenko, A. V. [Herzen State Pedagogical University of Russia (Russian Federation); Terukov, E. I. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Egorova, A. Yu. [St.-Petersburg Mining University (Russian Federation); Kiselev, V. S.; Seregin, P. P., E-mail: ppseregin@mail.ru [Herzen State Pedagogical University of Russia (Russian Federation)

    2017-04-15

    Impurity iron atoms in vitreous arsenic-selenide As{sub 2}Se{sub 3} films modified by iron form one-electron donor centers with an ionization energy of 0.24 (3) eV (the energy is counted from the conduction-band bottom). The Fermi level is shifted with an increase in the iron concentration from the mid-gap to the donorlevel position of iron due to the filling of one-electron states of the acceptor type lying below the Fermi level. At an iron concentration of ≥3 at %, the electron-exchange process is observed between neutral and ionized iron centers resulting in a change both in the electron density and in the tensor of the electric-field gradient at iron-atom nuclei with increasing temperature above 350 K.

  12. Giant tunnel-electron injection in nitrogen-doped graphene

    DEFF Research Database (Denmark)

    Lagoute, Jerome; Joucken, Frederic; Repain, Vincent

    2015-01-01

    Scanning tunneling microscopy experiments have been performed to measure the local electron injection in nitrogen-doped graphene on SiC(000) and were successfully compared to ab initio calculations. In graphene, a gaplike feature is measured around the Fermi level due to a phonon-mediated tunneling...... and at carbon sites. Nitrogen doping can therefore be proposed as a way to improve tunnel-electron injection in graphene....

  13. Electronic structures and magnetic properties of 3d and 4d transition-metal impurities in ferromagnetic Fe

    CERN Document Server

    Park, J H; Min, B I; Cho, H S

    2000-01-01

    Employing the self-consistent local approach, the tight-binding linear-muffin-tin orbital recursion method, we have investigated the electronic structures and the magnetic properties of 3d and 4d transition-metal (TM) impurities in ferromagnetic bcc Fe. In both 3d and 4d TM impurities, virtual bound states appear and are characterized by a high density of states in the energy spectrum. The characters of the states are studied by calculating the bond order between interaction orbitals. For early TM impurities, the states at the impurity sites have more antibonding characters, while the states at neighboring Fe sites have more bonding characters. For late TM impurities, the situation is reversed. late TM impurities of both the 3d and the 4d TM series have the same magnetic ordering as the host Fe atoms whereas early TM impurities have magnetic moments antiparallel to that of the host. As for the Mn impurity, an inward relaxation of neighboring Fe atoms stabilizes the antiferromagnetic ordering with respect to t...

  14. Coupling of ion temperature gradient and trapped electron modes in the presence of impurities in tokamak plasmas

    Science.gov (United States)

    Du, Huarong; Wang, Zheng-Xiong; Dong, J. Q.; Liu, S. F.

    2014-05-01

    The coupling of ion temperature gradient (ITG or ηi) mode and trapped electron mode (TEM) in the presence of impurity ions is numerically investigated in toroidal collisionless plasmas, using the gyrokinetic integral eigenmode equation. A framework for excitations of the ITG modes and TEMs with respect to their driving sources is formulated first, and then the roles of impurity ions played in are analyzed comprehensively. In particular, the characteristics of the ITG and TEM instabilities in the presence of impurity ions are emphasized for both strong and weak coupling (hybrid and coexistent) cases. It is found that the impurity ions with inwardly (outwardly) peaked density profiles have stabilizing (destabilizing) effects on the hybrid (namely the TE-ITG) modes in consistence with previous works. A new finding of this work is that the impurity ions have stabilizing effects on TEMs in small ηi (ηi≤1) regime regardless of peaking directions of their density profiles whereas the impurity ions with density gradient Lez=Lne/Lnz>1 (LezTEMs in large ηi (ηi≥1) regime. In addition, the dependences of the growth rate, real frequency, eigenmode structure, and wave spectrum on charge concentration, charge number, and mass of impurity ions are analyzed in detail. The necessity for taking impurity ion effects on the features of turbulence into account in future transport experimental data analyses is also discussed.

  15. Electronic structure of p type Delta doped systems; Estructura electronica de sistemas dopadas con Delta de tipo p

    Energy Technology Data Exchange (ETDEWEB)

    Gaggero S, L.M.; Perez A, R. [Departamento de Fisica de los Materiales, Universidad Nacional de Educacion a Distancia, Senda del Rey s/n, 28040 Madrid (Spain)

    1998-12-31

    We summarize of the results obtained for the electronic structure of quantum wells that consist in an atomic layer doped with impurities of p type. The calculations are made within the frame worth of the wrapper function approach to independent bands and with potentials of Hartree. We study the cases reported experimentally (Be in GaAs and B in Si). We present the levels of energy, the wave functions and the rate of the electronic population between the different subbands, as well as the dependence of these magnitudes with the density of impurities in the layer. The participation of the bans of heavy holes is analysed, light and split-off band in the total electronic population. The effect of the temperature is discussed and we give a possible qualitative explanation of the experimental optical properties. (Author)

  16. Influence of molybdenum impurity on the electronic properties of refractory phases

    International Nuclear Information System (INIS)

    Ivanovskij, A.L.

    1992-01-01

    Results of calculations of electronic structure modification of refractory phases - TiC, TiN - during dissolution in their volume of molybdenum as the element, dominating in the processes of formation of ring transition area (K-phase) are presented. It is shown that reconstruction of local state density (LSD) of Mo in the system Ni:Mo reflects the effects of impurity state and nickel valency area hybridization. LSD of Mo in MoC, MoN acquires quite a new form

  17. The effect of magnetic field and donor impurity on electron spectrum in spherical core-shell quantum dot

    Science.gov (United States)

    Holovatsky, V. A.; Voitsekhivska, O. M.; Yakhnevych, M. Ya

    2018-04-01

    The effect of homogeneous magnetic field and location of donor impurity on the electron energy spectrum and distribution of its probability density in spherical core-shell quantum dot is investigated. In the framework of the effective mass approximation and rectangular infinitely deep potential well, the solutions of the Schrodinger equation are found using the matrix method. The wave functions are expanded over the complete set of exact functions obtained without the magnetic field and impurity. It is shown that when the induction of magnetic field increases, the ground state of electron in the nanostructure without impurity or on-center impurity is successively formed by the states with m = 0, -1, -2, … (Aharonov-Bohm effect). When donor impurity is located in the shell of the nanostructure the Aharonov-Bohm effect vanishes. The dependences of electron energy spectrum and its wave functions on the location of impurity, placed along the direction of magnetic field or perpendicularly to it, are studied. It is shown, that in the first case, the quantum states are characterized by the certain value of magnetic quantum number m and the expansion contains the wave functions of the states with it only. In the second case, the cylindrical symmetry of the problem is broken and the new quantum states are formed from the states with different values of all three quantum numbers n, l, m and electron energy spectrum weakly depends on the magnetic field induction.

  18. Moessbauer effect in pure and impurity doped FeSi2

    International Nuclear Information System (INIS)

    Blaauw, C.; Hanson, H.; Woude, F. van der

    1975-01-01

    Numerical values of the calculated and experimentally determined Moessbauer parameters for pure β-FeSi 2 and α-FeSi 2 are given. Temperature dependence of isomer shift and quadrupole splitting for the two Fe positions in β-FeSi 2 is presented. For α-FeSi 2 only average values are given. Spectra of Co- and Al-doped FeSi 2 recorded at 80, 293, 557 and 788 K were analyzed in the same manner as those of undoped FeSi 2 . The average values of isomer shift and quadrupole splitting in Co- and Al-doped β-FeSi 2 (α-Fesi 2 ) were compared to those found in undoped β-FeSi 2 (α-FeSi 2 ). All data were based on the room temperature spectra. Changes in Moessbauer parameters of doped samples relative to undoped ones were generally small, being of the order of hundredths of mm/sec. (Z.S.)

  19. Doping dependence of charge order in electron-doped cuprate superconductors

    Science.gov (United States)

    Mou, Yingping; Feng, Shiping

    2017-12-01

    In the recent studies of the unconventional physics in cuprate superconductors, one of the central issues is the interplay between charge order and superconductivity. Here the mechanism of the charge-order formation in the electron-doped cuprate superconductors is investigated based on the t-J model. The experimentally observed momentum dependence of the electron quasiparticle scattering rate is qualitatively reproduced, where the scattering rate is highly anisotropic in momentum space, and is intriguingly related to the charge-order gap. Although the scattering strength appears to be weakest at the hot spots, the scattering in the antinodal region is stronger than that in the nodal region, which leads to the original electron Fermi surface is broken up into the Fermi pockets and their coexistence with the Fermi arcs located around the nodal region. In particular, this electron Fermi surface instability drives the charge-order correlation, with the charge-order wave vector that matches well with the wave vector connecting the hot spots, as the charge-order correlation in the hole-doped counterparts. However, in a striking contrast to the hole-doped case, the charge-order wave vector in the electron-doped side increases in magnitude with the electron doping. The theory also shows the existence of a quantitative link between the single-electron fermiology and the collective response of the electron density.

  20. Electronic conduction in doped multiferroic BiFeO3

    Science.gov (United States)

    Yang, Chan-Ho; Seidel, Jan; Kim, Sang-Yong; Gajek, M.; Yu, P.; Holcomb, M. B.; Martin, L. W.; Ramesh, R.; Chu, Y. H.

    2009-03-01

    Competition between multiple ground states, that are energetically similar, plays a key role in many interesting material properties and physical phenomena as for example in high-Tc superconductors (electron kinetic energy vs. electron-electron repulsion), colossal magnetoresistance (metallic state vs. charge ordered insulating state), and magnetically frustrated systems (spin-spin interactions). We are exploring the idea of similar competing phenomena in doped multiferroics by control of band-filling. In this paper we present systematic investigations of divalent Ca doping of ferroelectric BiFeO3 in terms of structural and electronic conduction properties as well as diffusion properties of oxygen vacancies.

  1. Improvement of the ab initio embedded cluster method for luminescence properties of doped materials by taking into account impurity induced distortions: the example of Y2O3:Bi(3+).

    Science.gov (United States)

    Réal, Florent; Ordejón, Belén; Vallet, Valérie; Flament, Jean-Pierre; Schamps, Joël

    2009-11-21

    New ab initio embedded-cluster calculations devoted to simulating the electronic spectroscopy of Bi(3+) impurities in Y(2)O(3) sesquioxide for substitutions in either S(6) or C(2) cationic sites have been carried out taking special care of the quality of the environment. A considerable quantitative improvement with respect to previous studies [F. Real et al. J. Chem. Phys. 125, 174709 (2006); F. Real et al. J. Chem. Phys. 127, 104705 (2007)] is brought by using environments of the impurities obtained via supercell techniques that allow the whole (pseudo) crystal to relax (WCR geometries) instead of environments obtained from local relaxation of the first coordination shell only (FSR geometries) within the embedded cluster approach, as was done previously. In particular the uniform 0.4 eV discrepancy of absorption energies found previously with FSR environments disappears completely when the new WCR environments of the impurities are employed. Moreover emission energies and hence Stokes shifts are in much better agreement with experiment. These decisive improvements are mainly due to a lowering of the local point-group symmetry (S(6)-->C(3) and C(2)-->C(1)) when relaxing the geometry of the emitting (lowest) triplet state. This symmetry lowering was not observed in FSR embedded cluster relaxations because the crystal field of the embedding frozen at the genuine pure crystal positions seems to be a more important driving force than the interactions within the cluster, thus constraining the overall symmetry of the system. Variations of the doping rate are found to have negligible influence on the spectra. In conclusion, the use of WCR environments may be crucial to render the structural distortions occurring in a doped crystal and it may help to significantly improve the embedded-cluster methodology to reach the quantitative accuracy necessary to interpret and predict luminescence properties of doped materials of this type.

  2. Effect of doping on the electron transport in polyfluorene

    Energy Technology Data Exchange (ETDEWEB)

    Bajpai, Manisha, E-mail: mansa83@gmail.com [Soft Materials Research Laboratory, Centre of Material Sciences, Institute of Interdisciplinary Studies, University of Allahabad, Allahabad, 211002 (India); Department of Physics, Banaras Hindu University, Varanasi-221005 (India); Srivastava, Ritu [Physics for Energy Harvesting Division, National Physical Laboratory (Council of Scientific and Industrial Research), Dr K. S. Krishnan Road, New Delhi 110012 (India); Dhar, Ravindra [Soft Materials Research Laboratory, Centre of Material Sciences, Institute of Interdisciplinary Studies, University of Allahabad, Allahabad, 211002 (India); Tiwari, R. S. [Department of Physics, Banaras Hindu University, Varanasi-221005 (India)

    2016-05-06

    In this paper, electron transport of pure and DMC doped polyfluorne (PF) films have been studied at various doping concentrations. Pure films show space charge limited conduction with field and temperature dependent mobility. The J–V characteristics of doped PF were ohmic at low voltages due to thermally released carriers from dopant states. At higher voltages the current density increases nonlinearly due to field dependent mobility and carrier concentration thereby filling of tail states of HOMO of the host. The conductivity of doped films were analyzed using the Unified Gaussian Disorder Model (UGDM). The carrier concentration obtained from the fitting show a non-linear dependence on doping concentration which may be due to a combined effect of thermally activated carrier generation and increased carrier mobility.

  3. Electronic and optical properties of antiferromagnetic iron doped NiO - A first principles study

    Science.gov (United States)

    Petersen, John E.; Twagirayezu, Fidele; Scolfaro, Luisa M.; Borges, Pablo D.; Geerts, Wilhelmus J.

    2017-05-01

    Antiferromagnetic NiO is a candidate for next generation high-speed and scaled RRAM devices. Here, electronic and optical properties of antiferromagnetic NiO: Fe 25% in the rock salt structure are studied and compared to intrinsic NiO. From density of states and complex dielectric function analysis, the first optical transition is found to be at lower frequency than intrinsic NiO due to an Fe impurity level being the valence band maximum. The resulting effects on refractive index, reflectivity, absorption, optical conductivity and loss function for Fe-doped NiO are compared to those of intrinsic NiO, and notable differences are analyzed. The electronic component of the static dielectric constant of NiO: Fe 25% is calculated to be about 2% less than that of intrinsic NiO.

  4. Exploring DC-Kerr effect of impurity doped quantum dots under the aegis of noise

    Science.gov (United States)

    Arif, Sk. Md.; Bera, Aindrila; Ghosh, Anuja; Ghosh, Manas

    2018-02-01

    Present study performs an extensive exploration of the profiles of DC-Kerr effect (DCKE) of doped GaAs quantum dot (QD) under the control of Gaussian white noise. A large number of important physical parameters have been varied over a range and the resultant changes in the DCKE profiles have been thoroughly analyzed. The said physical parameters comprise of electric field, magnetic field, confinement potential, dopant location, dopant potential, noise strength, aluminium concentration (only for Alx Ga1 - x As alloy QD), carrier density, relaxation time, position-dependent effective mass (PDEM), position-dependent dielectric screening function (PDDSF), anisotropy, hydrostatic pressure (HP) and temperature. The particular physical quantity being varied, presence of noise and its pathway of application, in combination, lead to emergence of diverse features in the DCKE profiles. As a technologically significant aspect we often find maximization of DCKE for some typical combinations as mentioned above. Presence of multiplicative noise, in general, causes greater shift and greater augmentation of DCKE profiles from a noise-free condition than its additive counterpart. The outcomes of the study indicate ample scope of tailoring DCKE of doped QD systems in presence of noise by minute adjustment of several control parameters.

  5. Self-limited kinetics of electron doping in correlated oxides

    International Nuclear Information System (INIS)

    Chen, Jikun; Zhou, You; Jiang, Jun; Shi, Jian; Ramanathan, Shriram; Middey, Srimanta; Chakhalian, Jak; Chen, Nuofu; Chen, Lidong; Shi, Xun; Döbeli, Max

    2015-01-01

    Electron doping by hydrogenation can reversibly modify the electrical properties of complex oxides. We show that in order to realize large, fast, and reversible response to hydrogen, it is important to consider both the electron configuration on the transition metal 3d orbitals, as well as the thermodynamic stability in nickelates. Specifically, large doping-induced resistivity modulations ranging several orders of magnitude change are only observed for rare earth nickelates with small ionic radii on the A-site, in which case both electron correlation effects and the meta-stability of Ni 3+ are important considerations. Charge doping via metastable incorporation of ionic dopants is of relevance to correlated oxide-based devices where advancing approaches to modify the ground state electronic properties is an important problem

  6. Energy- and temperature dependences of secondary electron emission of CsI- and CsBr layers doped with Cd

    International Nuclear Information System (INIS)

    Galij, P.V.; Tsal', N.A.

    1983-01-01

    The energy and temperature dependences of the secondary electron emission coefficient (SEEC) of CsI-Cd-, CsBr-Cd-, CsI-CsBr layers have been studied. The effect of bivalent cadmium impurity on the SEEC value is investigated. It is shown that implantation of small amounts of Cd 2+ impurity into the lattice of the initial monocrystals might increase the SEEC values of the layers. Temperature dependences (TD) of SEEC are measured and the possibility of comparing experimental results with the Dekker formula is analyzed. A conclusion is drawn that the Dekker model well describes the TD of SEEC of doped layers at temperatures T < or approximately 100 deg C. At elevated temperatures., along with secondary electron scattering on phonons, one should take into account their scattering on vacancies

  7. Protons in neutron-irradiated and thermochemically reduced MgO crystals doped with lithium impurities

    International Nuclear Information System (INIS)

    Gonzalez, R.; Pareja, R.; Chen, Y.

    1992-01-01

    H - (hydride) ions have been observed in lithium-doped MgO crystals which have been neutron irradiated or thermochemically reduced (TCR). Infrared-absorption measurements have been used to identify the local modes of the H - ions in these crystals. The concentration of the H - ions in the neutron-irradiated crystals is found to be far less than that found in the TCR crystals. The thermal stability of H - and oxygen vacancies in both oxidizing and reducing atmospheres are investigated. The emergence of sharp structures due to OH - ions is attributed to the displacements of substitutional Li + ions, leaving behind unperturbed OH - ions, via a mechanism of rapid radiation-induced diffusion during irradiation in a reactor. Results of neutron-irradiated MgO:Li, which had previously been oxidized at high temperature, are also presented

  8. Cellular dislocations patterns in monolike silicon: Influence of stress, time under stress and impurity doping

    Science.gov (United States)

    Oliveira, V. A.; Rocha, M.; Lantreibecq, A.; Tsoutsouva, M. G.; Tran-Thi, T. N.; Baruchel, J.; Camel, D.

    2018-05-01

    Besides the well-known local sub-grain boundaries (SGBs) defects, monolike Si ingots grown by Directional Solidification present distributed background cellular dislocation structures. In the present work, the influence of stress level, time under stress, and doping by O and Ge, on the formation of dislocation cells in monolike silicon, is analysed. This is achieved by performing a comparative study of the dislocation structures respectively obtained during crystallisation of pilot scale monolike ingots on Czochralski (CZ) and monolike seeds, during annealing of Float Zone (FZ), CZ, and 1 × 1020 at/cm3 Ge-doped CZ (GCZ) samples, and during 4-point bending of FZ and GCZ samples at 1300 °C under resolved stresses of 0.3, 0.7 and 1.9 MPa during 1-20 h. Synchrotron X-ray White-beam Topography and Rocking Curve Imaging (RCI) are applied to visualize the dislocation arrangements and to quantify the spatial distribution of the associated lattice distortions. Annealed samples and samples bent under 0.3 MPa present dislocation structures corresponding to transient creep stages where dislocations generated from surface defects are propagating and multiplying in the bulk. The addition of the hardening element Ge is found to block the propagation of dislocations from these surface sources during the annealing test, and to retard dislocation multiplication during bending under 0.3 MPa. On the opposite, cellular structures corresponding to the final stationary creep stage are obtained both in the non-molten seeds and grown part of monolike ingots and in samples bent under 0.7 and 1.9 MPa. A comparative discussion is made of the dynamics of formation of these final dislocation structures during deformation at high temperature and monolike growth.

  9. Impurity bubbles in a BEC

    Science.gov (United States)

    Timmermans, Eddy; Blinova, Alina; Boshier, Malcolm

    2013-05-01

    Polarons (particles that interact with the self-consistent deformation of the host medium that contains them) self-localize when strongly coupled. Dilute Bose-Einstein condensates (BECs) doped with neutral distinguishable atoms (impurities) and armed with a Feshbach-tuned impurity-boson interaction provide a unique laboratory to study self-localized polarons. In nature, self-localized polarons come in two flavors that exhibit qualitatively different behavior: In lattice systems, the deformation is slight and the particle is accompanied by a cloud of collective excitations as in the case of the Landau-Pekar polarons of electrons in a dielectric lattice. In natural fluids and gases, the strongly coupled particle radically alters the medium, e.g. by expelling the host medium as in the case of the electron bubbles in superfluid helium. We show that BEC-impurities can self-localize in a bubble, as well as in a Landau-Pekar polaron state. The BEC-impurity system is fully characterized by only two dimensionless coupling constants. In the corresponding phase diagram the bubble and Landau-Pekar polaron limits correspond to large islands separated by a cross-over region. The same BEC-impurity species can be adiabatically Feshbach steered from the Landau-Pekar to the bubble regime. This work was funded by the Los Alamos LDRD program.

  10. Electronic structure of light impurities in α-Fe and V

    International Nuclear Information System (INIS)

    Gong Xingao; Zeng Zhi; Zheng Wingqi

    1987-07-01

    The electronic structure of α-Fe and V with hydrogen and carbon as impurities is calculated using the embedded cluster models in the framework of self-consistent local density theory. The results obtained reveal that the charge transfer between the H atom and the host atom is small, but the magnetic moments of neighbouring Fe atoms are reduced. The total energy implies that hydrogen in α-Fe is more easily found to occupy the octahedral interstitial site. On the other hand, there is a charge transfer between the C atom and the host atoms. The distance between the carbon and the nearest neighbour iron atoms is 23% elongated. The interaction between the hydrogen and the carbon impurities was studied using a set of clusters of Fe 10 CH in which the atoms were located in five kinds of configuration. The energy of clusters with hydrogen on octahedral interstitial site is lower than that on the tetrahedral interstitial site. (author). 10 refs, 6 figs, 2 tabs

  11. Exploration of dynamic dipole polarizability of impurity doped quantum dots in presence of noise

    Science.gov (United States)

    Ghosh, Anuja; Bera, Aindrila; Saha, Surajit; Arif, Sk. Md.; Ghosh, Manas

    2018-02-01

    Present study strives to perform a rigorous exploration of dynamic dipole polarizability (DDP) of GaAs quantum dot (QD) containing dopant with special reference to influence of Gaussian white noise. Several physical quantities have been varied over a range to observe the modulations of the DDP profiles. Aforesaid physical quantities include magnetic field, confinement potential, dopant location, dopant potential, noise strength, aluminium concentration (only for Alx Ga1 - x As alloy QD), position-dependent effective mass (PDEM), position-dependent dielectric screening function (PDDSF), anisotropy, hydrostatic pressure (HP) and temperature. The DDP profiles reveal noticeable characteristics governed by the particular physical quantity involved, presence/absence of noise, the manner (additive/multiplicative) noise is applied to the system and the incoming photon frequency. As a general observation we have found that additive noise causing greater deviation of the DDP profile from noise-free state than its multiplicative neighbor. The study highlights viable means of harnessing DDP of doped QD under the governance of noise by appropriate adjustment of several relevant factors. The study merits importance in the light of technological applications of QD-based devices where noise appears as an integral component.

  12. Donor-impurity-related optical response and electron Raman scattering in GaAs cone-like quantum dots

    Science.gov (United States)

    Gil-Corrales, A.; Morales, A. L.; Restrepo, R. L.; Mora-Ramos, M. E.; Duque, C. A.

    2017-02-01

    The donor-impurity-related optical absorption, relative refractive index changes, and Raman scattering in GaAs cone-like quantum dots are theoretically investigated. Calculations are performed within the effective mass and parabolic band approximations, using the variational procedure to include the electron-impurity correlation effects. The study involves 1 s -like, 2px-like, and 2pz-like states. The conical structure is chosen in such a way that the cone height is large enough in comparison with the base radius thus allowing the use a quasi-analytic solution of the uncorrelated Schrödinger-like electron states.

  13. Electronic structure of O-doped SiGe calculated by DFT + U method

    Science.gov (United States)

    Zhao, Zong-Yan; Yang, Wen; Yang, Pei-Zhi

    2016-12-01

    To more in depth understand the doping effects of oxygen on SiGe alloys, both the micro-structure and properties of O-doped SiGe (including: bulk, (001) surface, and (110) surface) are calculated by DFT + U method in the present work. The calculated results are as follows. (i) The (110) surface is the main exposing surface of SiGe, in which O impurity prefers to occupy the surface vacancy sites. (ii) For O interstitial doping on SiGe (110) surface, the existences of energy states caused by O doping in the band gap not only enhance the infrared light absorption, but also improve the behaviors of photo-generated carriers. (iii) The finding about decreased surface work function of O-doped SiGe (110) surface can confirm previous experimental observations. (iv) In all cases, O doing mainly induces the electronic structures near the band gap to vary, but is not directly involved in these variations. Therefore, these findings in the present work not only can provide further explanation and analysis for the corresponding underlying mechanism for some of the experimental findings reported in the literature, but also conduce to the development of μc-SiGe-based solar cells in the future. Project supported by the Natural Science Foundation of Yunnan Province, China (Grant No. 2015FB123), the 18th Yunnan Province Young Academic and Technical Leaders Reserve Talent Project, China (Grant No. 2015HB015), and the National Natural Science Foundation of China (Grant No. U1037604).

  14. Substitutionally doped phosphorene: electronic properties and gas sensing.

    Science.gov (United States)

    Suvansinpan, Nawat; Hussain, Fayyaz; Zhang, Gang; Chiu, Cheng Hsin; Cai, Yongqing; Zhang, Yong-Wei

    2016-02-12

    Phosphorene, a new elemental two-dimensional material, has attracted increasing attention owing to its intriguing electronic properties. In particular, pristine phospohorene, due to its ultrahigh surface-volume ratio and high chemical activity, has been shown to be promising for gas sensing (Abbas et al 2015 ACS Nano 9 5618). To further enhance its sensing ability, we perform first-principles calculations based on density functional theory to study substitutionally doped phosphorene with 17 different atoms, focusing on structures, energetics, electronic properties and gas sensing. Our calculations reveal that anionic X (X = O, C and S) dopants have a large binding energy and highly dispersive electronic states, signifying the formation of covalent X-P bonds and thus strong structural stability. Alkali atom (Li and Na) doping is found to donate most of the electrons in the outer s-orbital by forming ionic bonds with P, and the band gap decreases by pushing down the conduction band, suggesting that the optical and electronic properties of the doped phosphorene can be tailored. For doping with VIIIB-group (Fe, Co and Ni) elements, a strong affinity is predicted and the binding energy and charge transfer are correlated strongly with their electronegativity. By examining NO molecule adsorption, we find that these metal doped phosphorenes (MDPs) in general exhibit a significantly enhanced chemical activity compared with pristine phosphorene. Our study suggests that substitutionally doped phosphorene shows many intriguing electronic and optic properties different from pristine phosphorene and MDPs are promising in chemical applications involving molecular adsorption and desorption processes, such as materials growth, catalysis, gas sensing and storage.

  15. Electron field emission from boron doped microcrystalline diamond

    International Nuclear Information System (INIS)

    Roos, M.; Baranauskas, V.; Fontana, M.; Ceragioli, H.J.; Peterlevitz, A.C.; Mallik, K.; Degasperi, F.T.

    2007-01-01

    Field emission properties of hot filament chemical vapor deposited boron doped polycrystalline diamond have been studied. Doping level (N B ) of different samples has been varied by the B/C concentration in the gas feed during the growth process and doping saturation has been observed for high B/C ratios. Threshold field (E th ) for electron emission as function of B/C concentration has been measured, and the influences of grain boundaries, doping level and surface morphology on field emission properties have been investigated. Carrier transport through conductive grains and local emission properties of surface sites have been figured out to be two independent limiting effects in respect of field emission. Emitter current densities of 500 nA cm -2 were obtained using electric fields less than 8 V/μm

  16. Electron trap annealing in neutron transmutation doped silicon

    DEFF Research Database (Denmark)

    Guldberg, J.

    1977-01-01

    Silicon doped by neutron transmutation to 1.2×1014 phosphorus atoms/cm3 was investigated with deep level transient spectroscopy using evaporated Au/n-Si diodes. Seven bulk electron traps were identified which appear after 30 min N2 anneal at temperatures between 425 and 725 °C. Five of these anne......Silicon doped by neutron transmutation to 1.2×1014 phosphorus atoms/cm3 was investigated with deep level transient spectroscopy using evaporated Au/n-Si diodes. Seven bulk electron traps were identified which appear after 30 min N2 anneal at temperatures between 425 and 725 °C. Five...

  17. Studying metal impurities (Mn2+, Cu2+, Fe3+) in calcium phosphates by electron paramagnetic resonance

    Science.gov (United States)

    Iskhakova, K.; Murzakhanov, F.; Mamin, G.; Putlyaev, V.; Klimashina, E.; Fadeeva, I.; Fomin, A.; Barinov, S.; Maltsev, A.; Bakhteev, S.; Yusupov, R.; Gafurov, M.; Orlinskii, S.

    2018-05-01

    Calcium phosphates (CaP) are exploited in many fields of science, including geology, chemistry, biology and medicine due to their abundance in the nature and presence in the living organism. Various analytical and biochemical methods are used for controlling their chemical content, structure, morphology, etc. Unfortunately, magnetic resonance techniques are usually not even considered as necessary tools for CaP inspection. Some aspects of application of the commercially realized electron paramagnetic resonance (EPR) approaches for characterization of CaP powders and ceramics (including the nanosized materails) such as hydroxyapatite and tricalcium phosphates of biogenic and synthetic origins containing intrinsic impurities or intentional dopants are demonstrated. The key features and advantages of the EPR techniques for CaP based materials characterization that could compliment the data obtained with the recognized analytical methods are pointed out.

  18. Effective equations for the precession dynamics of electron spins and electron–impurity correlations in diluted magnetic semiconductors

    International Nuclear Information System (INIS)

    Cygorek, M; Axt, V M

    2015-01-01

    Starting from a quantum kinetic theory for the spin dynamics in diluted magnetic semiconductors, we derive simplified equations that effectively describe the spin transfer between carriers and magnetic impurities for an arbitrary initial impurity magnetization. Taking the Markov limit of these effective equations, we obtain good quantitative agreement with the full quantum kinetic theory for the spin dynamics in bulk systems at high magnetic doping. In contrast, the standard rate description where the carrier–dopant interaction is treated according to Fermi’s golden rule, which involves the assumption of a short memory as well as a perturbative argument, has been shown previously to fail if the impurity magnetization is non-zero. The Markov limit of the effective equations is derived, assuming only a short memory, while higher order terms are still accounted for. These higher order terms represent the precession of the carrier–dopant correlations in the effective magnetic field due to the impurity spins. Numerical calculations show that the Markov limit of our effective equations reproduces the results of the full quantum kinetic theory very well. Furthermore, this limit allows for analytical solutions and for a physically transparent interpretation. (paper)

  19. Impurity induced resistivity upturns in underdoped cuprates

    Energy Technology Data Exchange (ETDEWEB)

    Das, Nabyendu, E-mail: nabyendudas@gmail.com; Singh, Navinder

    2016-01-28

    Impurity induced low temperature upturns in both the ab-plane and the c-axis dc-resistivities of cuprates in the pseudogap state have been observed in experiments. We provide an explanation of this phenomenon by incorporating impurity scattering of the charge carriers within a phenomenological model proposed by Yang, Rice and Zhang. The scattering between charge carriers and the impurity atom is considered within the lowest order Born approximation. Resistivity is calculated within Kubo formula using the impurity renormalized spectral functions. Using physical parameters for cuprates, we describe qualitative features of the upturn phenomena and its doping evolution that coincides with the experimental findings. We stress that this effect is largely due to the strong electronic correlations.

  20. Impurity induced resistivity upturns in underdoped cuprates

    International Nuclear Information System (INIS)

    Das, Nabyendu; Singh, Navinder

    2016-01-01

    Impurity induced low temperature upturns in both the ab-plane and the c-axis dc-resistivities of cuprates in the pseudogap state have been observed in experiments. We provide an explanation of this phenomenon by incorporating impurity scattering of the charge carriers within a phenomenological model proposed by Yang, Rice and Zhang. The scattering between charge carriers and the impurity atom is considered within the lowest order Born approximation. Resistivity is calculated within Kubo formula using the impurity renormalized spectral functions. Using physical parameters for cuprates, we describe qualitative features of the upturn phenomena and its doping evolution that coincides with the experimental findings. We stress that this effect is largely due to the strong electronic correlations.

  1. Effect of impurity doping on tunneling conductance in AB-stacked bi-layer graphene: A tight-binding study

    Energy Technology Data Exchange (ETDEWEB)

    Rout, G. C., E-mail: siva1987@iopb.res.in, E-mail: skp@iopb.res.in, E-mail: gcr@iopb.res.in [Physics Enclave, Plot No-664/4825, Lane-4A, Shree Vihar, Bhubaneswar-751031, Odisha (India); Sahu, Sivabrata [School of Applied Sciences (Physics), KIIT University, Bhubaneswar-751024, Odisha (India); Panda, S. K. [K.D. Science College, Pochilima, Hinjilicut,Pin-761101 Ganjam, Orissa (India)

    2016-04-13

    We report here a microscopic tight-binding model calculation for AB-stacked bilayer graphene in presence of biasing potential between the two layers and the impurity effects to study the evolution of the total density of states with special emphasis on opening of band gap near Dirac point. We have calculated the electron Green’s functions for both the A and B sub-lattices by Zubarev technique. The imaginary part of the Green’s function gives the partial and total density of states of electrons. The density of states are computed numerically for 1000 × 1000 grid points of the electron momentum. The evolution of the opening of band gap near van-Hove singularities as well as near Dirac point is investigated by varying the different interlayer hoppings and the biasing potentials. The inter layer hopping splits the density of states at van-Hove singularities and produces a V-shaped gap near Dirac point. Further the biasing potential introduces a U shaped gap near Dirac point with a density minimum at the applied potential(i.e. at V/2).

  2. Effect of impurity doping on tunneling conductance in AB-stacked bi-layer graphene: A tight-binding study

    International Nuclear Information System (INIS)

    Rout, G. C.; Sahu, Sivabrata; Panda, S. K.

    2016-01-01

    We report here a microscopic tight-binding model calculation for AB-stacked bilayer graphene in presence of biasing potential between the two layers and the impurity effects to study the evolution of the total density of states with special emphasis on opening of band gap near Dirac point. We have calculated the electron Green’s functions for both the A and B sub-lattices by Zubarev technique. The imaginary part of the Green’s function gives the partial and total density of states of electrons. The density of states are computed numerically for 1000 × 1000 grid points of the electron momentum. The evolution of the opening of band gap near van-Hove singularities as well as near Dirac point is investigated by varying the different interlayer hoppings and the biasing potentials. The inter layer hopping splits the density of states at van-Hove singularities and produces a V-shaped gap near Dirac point. Further the biasing potential introduces a U shaped gap near Dirac point with a density minimum at the applied potential(i.e. at V/2).

  3. Characterization of light element impurities in ultrathin silicon-on-insulator layers by luminescence activation using electron irradiation

    International Nuclear Information System (INIS)

    Nakagawa-Toyota, Satoko; Tajima, Michio; Hirose, Kazuyuki; Ohshima, Takeshi; Itoh, Hisayoshi

    2009-01-01

    We analyzed light element impurities in ultrathin top Si layers of silicon-on-insulator (SOI) wafers by luminescence activation using electron irradiation. Photoluminescence (PL) analysis under ultraviolet (UV) light excitation was performed on various commercial SOI wafers after the irradiation. We detected the C-line related to a complex of interstitial carbon and oxygen impurities and the G-line related to a complex of interstitial and substitutional carbon impurities in the top Si layer with a thickness down to 62 nm after electron irradiation. We showed that there were differences in the impurity concentration depending on the wafer fabrication methods and also that there were variations in these concentrations in the respective wafers. Xenon ion implantation was used to activate top Si layers selectively so that we could confirm that the PL signal under the UV light excitation comes not from substrates but from top Si layers. The present method is a very promising tool to evaluate the light element impurities in top Si layers. (author)

  4. Temperature Dependence of the Spin-Hall Conductivity of a Two-Dimensional Impure Rashba Electron Gas in the Presence of Electron-Phonon and Electron-Electron Interactions

    Science.gov (United States)

    Yavari, H.; Mokhtari, M.; Bayervand, A.

    2015-03-01

    Based on Kubo's linear response formalism, temperature dependence of the spin-Hall conductivity of a two-dimensional impure (magnetic and nonmagnetic impurities) Rashba electron gas in the presence of electron-electron and electron-phonon interactions is analyzed theoretically. We will show that the temperature dependence of the spin-Hall conductivity is determined by the relaxation rates due to these interactions. At low temperature, the elastic lifetimes ( and are determined by magnetic and nonmagnetic impurity concentrations which are independent of the temperature, while the inelastic lifetimes ( and related to the electron-electron and electron-phonon interactions, decrease when the temperature increases. We will also show that since the spin-Hall conductivity is sensitive to temperature, we can distinguish the intrinsic and extrinsic contributions.

  5. Stoichiometry control in quantum dots: a viable analog to impurity doping of bulk materials.

    Science.gov (United States)

    Luther, Joseph M; Pietryga, Jeffrey M

    2013-03-26

    A growing body of research indicates that the stoichiometry of compound semiconductor quantum dots (QDs) may offer control over the materials' optoelectronic properties in ways that could be invaluable in electronic devices. Quantum dots have been characterized as having a stoichiometric bulk-like core with a highly reconstructed surface of a more flexible composition, consisting essentially of ligated, weakly bound ions. As such, many efforts toward stoichiometry-based control over material properties have focused on ligand manipulation. In this issue of ACS Nano, Murray and Kagan's groups instead demonstrate control of the conductive properties of QD arrays by altering the stoichiometry via atomic infusion using a thermal evaporation technique. In this work, PbSe and PbS QD films are made to show controlled n- or p-type behavior, which is key to developing optimized QD-based electronics. In this Perspective, we discuss recent developments and the future outlook in using stoichiometry as a tool to further manipulate QD material properties in this context.

  6. Electronic Conductivity of Doped-Lanthanum Gallate Electrolytes

    Science.gov (United States)

    Yamaji, Katsuhiko; Xiong, Yue Ping; Kishimoto, Haruo; Horita, Teruhisa; Sakai, Natsuko; Brito, Manuel E.; Yokokawa, Harumi

    Electronic conductivity of doped lanthanum gallate electrolytes were determined by using a Hebb-Wagner type polarization cell. Electronic conductivity of cobalt-doped, La0.8Sr0.2Ga0.8Mg0.15Co0.5O3-δ (LSGMC), and non cobalt-doped, La0.8Sr0.2Ga0.8Mg0.2O2.8 (LSGM8282), were measured as a function of oxygen partial pressures. The electronic conductivity of LSGM8282 showed a linear dependence on p(O2)1/4 in the higher p(O2) region, which is attributed to the electronic hole conductivity. The electronic conductivity of LSGMC showed a linear dependence on p(O2)1/6 in the higher p(O2) region. LSGMC has higher electronic conductivity than LSGM, and the conductivity was not clearly changed with temperatures between 600 and 800 °C. In lower p(O2) region, the electronic conductivity data have poor reproducibility and did not show any dependence on p(O2) because of the degradation of the electrolytes in severe reducing atmospheres.

  7. Morphological and Chemical Analysis of Impurities in Ice Using the Environmental Scanning Electron Microscopy and Fluorescence Spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Neděla, Vilém; Runštuk, Jiří; Krausko, J.; Klán, P.; Heger, D.

    2015-01-01

    Roč. 21, S3 (2015), s. 1699-1700 ISSN 1431-9276 R&D Projects: GA ČR(CZ) GA14-22777S Institutional support: RVO:68081731 Keywords : Ice * ESEM * impurities * morphology Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.730, year: 2015

  8. CO2 adsorption on Fe-doped graphene nanoribbons: First principles electronic transport calculations

    Directory of Open Access Journals (Sweden)

    G. R. Berdiyorov

    2016-12-01

    Full Text Available Decoration of graphene with metals and metal-oxides is known to be one of the effective methods to enhance gas sensing and catalytic properties of graphene. We use density functional theory in combination with the nonequilibrium Green’s function formalism to study the conductance response of Fe-doped graphene nanoribbons to CO2 gas adsorption. A single Fe atom is either adsorbed on graphene’s surface (aFe-graphene or it substitutes the carbon atom (sFe-graphene. Metal atom doping reduces the electronic transmission of pristine graphene due to the localization of electronic states near the impurities. The reduction in the transmission is more pronounced in the case of aFe-graphene. In addition, the aFe-graphene is found to be less sensitive to the CO2 molecule attachment as compared to the sFe-graphene system. Pristine graphene is also found to be less sensitive to the molecular adsorption. Since the change in the conductivity is one of the main outputs of sensors, our findings will be useful in developing graphene-based solid-state gas sensors.

  9. The influence of impurities on the recovery of radiation defects in niobium

    International Nuclear Information System (INIS)

    Petzold, J.

    1986-01-01

    Pure niobium and doped niobium are irradiated with electrons (3 MeV) at a temperature of 7-8 K. During annealing the influence of the different impurities and of their doping concentration on the recovery of the electric conductivity are investigated. (BHO)

  10. Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity states

    Energy Technology Data Exchange (ETDEWEB)

    Tiutiunnyk, A. [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia); Department of Physics, Donbass State Engineering Academy, Shkadinova 72, 84313 Kramatorsk (Ukraine); Akimov, V. [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia); Department of Physics, Donbass State Engineering Academy, Shkadinova 72, 84313 Kramatorsk (Ukraine); Universidad de Medellín, Carrera 87 No 30-65 Medellín (Colombia); Tulupenko, V. [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia); Department of Physics, Donbass State Engineering Academy, Shkadinova 72, 84313 Kramatorsk (Ukraine); Mora-Ramos, M.E. [Centro de Investigación en Ciencias, Instituto de Investigación en Ciencias Básicas y Aplicadas, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209 Cuernavaca, Morelos (Mexico); Kasapoglu, E. [Cumhuriyet University, Physics Department, 58140 Sivas (Turkey); Ungan, F. [Cumhuriyet University, Faculty of Technology, Deparment of Optical Engineering, 58140 Sivas (Turkey); Sökmen, I. [Department of Physics, Dokuz Eylül University, 35160 Buca, İzmir (Turkey); and others

    2016-03-01

    Electronic structure and optical properties in equilateral triangular GaAs/Al{sub 0.3}Ga{sub 0.7}As quantum dots are studied extensively. The effects of donor and acceptor impurity atoms positioned in the orthocenter of the triangle, as well as of the external DC electric field are taken into account. Binding energies of the impurity, exciton energies, interband photoluminescence peak positions as well as linear and non-linear optical properties in THz range caused by transitions between excitonic states are calculated and discussed.

  11. Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity states

    International Nuclear Information System (INIS)

    Tiutiunnyk, A.; Akimov, V.; Tulupenko, V.; Mora-Ramos, M.E.; Kasapoglu, E.; Ungan, F.; Sökmen, I.

    2016-01-01

    Electronic structure and optical properties in equilateral triangular GaAs/Al_0_._3Ga_0_._7As quantum dots are studied extensively. The effects of donor and acceptor impurity atoms positioned in the orthocenter of the triangle, as well as of the external DC electric field are taken into account. Binding energies of the impurity, exciton energies, interband photoluminescence peak positions as well as linear and non-linear optical properties in THz range caused by transitions between excitonic states are calculated and discussed.

  12. Stability of the antiferromagnetic state in the electron doped iridates

    Science.gov (United States)

    Bhowal, Sayantika; Moradi Kurdestany, Jamshid; Satpathy, Sashi

    2018-06-01

    Iridates such as Sr2IrO4 are of considerable interest owing to the formation of the Mott insulating state driven by a large spin–orbit coupling. However, in contrast to the expectation from the Nagaoka theorem that a single doped hole or electron destroys the anti-ferromagnetic (AFM) state of the half-filled Hubbard model in the large U limit, the anti-ferromagnetism persists in the doped Iridates for a large dopant concentration beyond half-filling. With a tight-binding description of the relevant states by the third-neighbor (t 1, t 2, t 3, U) Hubbard model on the square lattice, we examine the stability of the AFM state to the formation of a spin spiral state in the strong coupling limit. The third-neighbor interaction t 3 is important for the description of the Fermi surface of the electron doped system. A phase diagram in the parameter space is obtained for the regions of stability of the AFM state. Our results qualitatively explain the robustness of the AFM state in the electron doped iridate (such as Sr2‑x La x IrO4), observed in many experiments, where the AFM state continues to be stable until a critical dopant concentration.

  13. Electron Paramagnetic Resonance and X-ray Diffraction of Boron- and Phosphorus-Doped Nanodiamonds

    Science.gov (United States)

    Binh, Nguyen Thi Thanh; Dolmatov, V. Yu.; Lapchuk, N. M.; Shymanski, V. I.

    2017-11-01

    Powders of boron- and phosphorus-doped detonation nanodiamonds and sintered pellets of non-doped nanodiamond powders were studied using electron paramagnetic resonance and x-ray diffraction. Doping of detonation nanodiamond crystals with boron and phosphorus was demonstrated to be possible. These methods could be used to diagnose diamond nanocrystals doped during shock-wave synthesis.

  14. Doping Phosphorene with Holes and Electrons through Molecular Charge Transfer.

    Science.gov (United States)

    Vishnoi, Pratap; Rajesh, S; Manjunatha, S; Bandyopadhyay, Arkamita; Barua, Manaswee; Pati, Swapan K; Rao, C N R

    2017-11-03

    An important aspect of phosphorene, the novel two-dimensional semiconductor, is whether holes and electrons can both be doped in this material. Some reports found that only electrons can be preferentially doped into phosphorene. There are some theoretical calculations showing charge-transfer interaction with both tetrathiafulvalene (TTF) and tetracyanoethylene (TCNE). We have carried out an investigation of chemical doping of phosphorene by a variety of electron donor and acceptor molecules, employing both experiment and theory, Raman scattering being a crucial aspect of the study. We find that both electron acceptors and donors interact with phosphorene by charge-transfer, with the acceptors having more marked effects. All the three Raman bands of phosphorene soften and exhibit band broadening on interaction with both donor and acceptor molecules. First-principles calculations establish the occurrence of charge-transfer between phosphorene with donors as well as acceptors. The absence of electron-hole asymmetry is noteworthy. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Optical and magneto-optical properties of the electron-doped and hole-doped C{sub 82} crystal

    Energy Technology Data Exchange (ETDEWEB)

    Rostampour, E., E-mail: el_rostampour@yahoo.com [Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Koohi, A. [Plasma Physics and Nuclear Fusion Research School, Nuclear Science and Technology Research Institute, AEOI, Tehran (Iran, Islamic Republic of)

    2015-01-15

    The optical and magnetic properties of the doped C{sub 82} crystal have been investigated by Su–Schrieffer–Heeger (SSH) model, which is based on the Ewald method. When the C{sub 82} molecule is doped with one electron (or hole), a single electron is remained in the energy level that affects the optical and magnetic properties of the C{sub 82} crystal. The lattice and electronic structures of C{sub 82} changed with doping electron (or hole) in the molecule of C{sub 82}. Therefore, polarons are predicted in doped fullerenes. The obtained results showed that the dielectric tensor of the C{sub 82} crystal increased with doping electron (or hole) in the molecule of C{sub 82}. The spectral shapes of the dielectric tensor, circular dichroism and birefringence coefficient of the C{sub 82} crystal turn out to be determined mainly by the geometrical distributions of the pentagons in the fullerene structures.

  16. Dipole moment and polarizability of impurity doped quantum dots under anisotropy, spatially-varying effective mass and dielectric screening function: Interplay with noise

    Science.gov (United States)

    Ghosh, Anuja; Ghosh, Manas

    2018-01-01

    Present work explores the profiles of polarizability (αp) and electric dipole moment (μ) of impurity doped GaAs quantum dot (QD) under the aegis of spatially-varying effective mass, spatially-varying dielectric constant and anisotropy of the system. Presence of noise has also been invoked to examine how its intervention further tunes αp and μ. Noise term maintains a Gaussian white feature and it has been incorporated to the system through two different roadways; additive and multiplicative. The various facets of influence of spatially-varying effective mass, spatially-varying dielectric constant and anisotropy on αp and μ depend quite delicately on presence/absence of noise and also on the mode through which noise has been administered. The outcomes of the study manifest viable routes to harness the dipole moment and polarizability of doped QD system through the interplay between noise, anisotropy and variable effective mass and dielectric constant of the system.

  17. Superconductivity pairing mechanism from cobalt impurity doping in FeSe: Spin (s±) or orbital (s++) fluctuation

    Science.gov (United States)

    Urata, T.; Tanabe, Y.; Huynh, K. K.; Yamakawa, Y.; Kontani, H.; Tanigaki, K.

    2016-01-01

    In high-superconducting transition temperature (Tc) iron-based superconductors, interband sign reversal (s±) and sign preserving (s++) s -wave superconducting states have been primarily discussed as the plausible superconducting mechanism. We study Co impurity scattering effects on the superconductivity in order to achieve an important clue on the pairing mechanism using single-crystal Fe1 -xCoxSe and depict a phase diagram of a FeSe system. Both superconductivity and structural transition/orbital order are suppressed by the Co replacement on the Fe sites and disappear above x = 0.036. These correlated suppressions represent a common background physics behind these physical phenomena in the multiband Fermi surfaces of FeSe. By comparing experimental data and theories so far proposed, the suppression of Tc against the residual resistivity is shown to be much weaker than that predicted in the case of general sign reversal and full gap s± models. The origin of the superconducting paring in FeSe is discussed in terms of its multiband electronic structure.

  18. Anomalous electron doping independent two-dimensional superconductivity

    Science.gov (United States)

    Zhou, Wei; Xing, Xiangzhuo; Zhao, Haijun; Feng, Jiajia; Pan, Yongqiang; Zhou, Nan; Zhang, Yufeng; Qian, Bin; Shi, Zhixiang

    2017-07-01

    Transition metal (Co and Ni) co-doping effects are investigated on an underdoped Ca0.94La0.06Fe2As2 compound. It is discovered that electron doping from substituting Fe with transition metal (TM = Co, Ni) can trigger high-{T}{{c}} superconductivity around 35 K, which emerges abruptly before the total suppression of the innate spin-density-wave/anti-ferromagnetism (SDW/AFM) state. Remarkably, the critical temperature for the high-{T}{{c}} superconductivity remains constant against a wide range of TM doping levels. And the net electron doping density dependence of the superconducting {T}{{c}} based on the rigid band model can be nicely scaled into a single curve for Co and Ni substitutions, in stark contrast to the case of Ba(Fe1-x TM x )2As2. This carrier density independent superconductivity and the unusual scaling behavior are presumably resulted from the interface superconductivity based on the similarity with the interface superconductivity in a La2-x Sr x CuO4-La2CuO4 bilayer. Evidence of the two-dimensional character of the superfluid by angle-resolved magneto-resistance measurements can further strengthen the interface nature of the high-{T}{{c}} superconductivity.

  19. Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures

    International Nuclear Information System (INIS)

    Chicot, G.; Fiori, A.; Tran Thi, T. N.; Bousquet, J.; Delahaye, J.; Grenet, T.; Eon, D.; Omnès, F.; Bustarret, E.; Volpe, P. N.; Tranchant, N.; Mer-Calfati, C.; Arnault, J. C.; Gerbedoen, J. C.; Soltani, A.; De Jaeger, J. C.; Alegre, M. P.; Piñero, J. C.; Araújo, D.; Jomard, F.

    2014-01-01

    Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single crystal diamond substrates were used after being characterized by X-ray white beam topography. The chemical composition and thickness of these so-called delta-doped structures have been studied by secondary ion mass spectrometry, transmission electron microscopy, and spectroscopic ellipsometry. Temperature-dependent Hall effect and four probe resistivity measurements have been performed on mesa-patterned Hall bars. The temperature dependence of the hole sheet carrier density and mobility has been investigated over a broad temperature range (6 K  2 /Vs, independently of the layer thickness and the substrate type. Comparison with previously published data and theoretical calculations showed that scattering by ionized impurities explained only partially this low common value. None of the delta-layers showed any sign of confinement-induced mobility enhancement, even for thicknesses lower than 2 nm

  20. Bosonic excitations and electron pairing in an electron-doped cuprate superconductor

    Science.gov (United States)

    Wang, M. C.; Yu, H. S.; Xiong, J.; Yang, Y.-F.; Luo, S. N.; Jin, K.; Qi, J.

    2018-04-01

    By applying ultrafast optical spectroscopy to electron-doped La1.9Ce0.1CuO4 ±δ , we discern a bosonic mode of electronic origin and provide the evolution of its coupling with the charge carriers as a function of temperature. Our results show that it has the strongest coupling strength near Tc and can fully account for the superconducting pairing. This mode can be associated with the two-dimensional antiferromagnetic spin correlations emerging below a critical temperature T† larger than Tc. Our work may help to establish a quantitative relation between bosonic excitations and superconducting pairing in electron-doped cuprates.

  1. Effect of (Mn,Cr) co-doping on structural, electronic and magnetic properties of zinc oxide by first-principles studies

    Science.gov (United States)

    Aimouch, D. E.; Meskine, S.; Boukortt, A.; Zaoui, A.

    2018-04-01

    In this study, structural, electronic and magnetic properties of Mn doped (ZnO:Mn) and (Mn,Cr) co-doped zinc oxide (ZnO:(Mn,Cr)) have been calculated with the FP-LAPW method by using the LSDA and LSDA+U approximations. Going through three configurations of Mn,Cr co-doped ZnO corresponding to three different distances between manganese and chromium, we have analyzed that ZnO:(Mn,Cr) system is more stable in its preferred configuration2. The lattice constant of undoped ZnO that has been calculated in this study is in a good agreement with the experimental and theoretical values. It was found to be increased by doping with Mn or (Mn,Cr) impurities. The band structure calculations showed the metallic character of Mn doped and Mn,Cr co-doped ZnO. As results, by using LSDA+U (U = 6eV), we show the half-metallic character of ZnO:Mn and ZnO:Mn,Cr. We present the calculated exchange couplings d-d of Mn doped ZnO which is in a good agreement with the former FPLO calculation data and the magnetization step measurement of the experimental work. The magnetic coupling between neighboring Mn impurities in ZnO is found to be antiferromagnetic. In the case of (Mn,Cr) co-doped ZnO, the magnetic coupling between Mn and Cr impurities is found to be antiferromagnetic for configuration1 and 3, and ferromagnetic for configuration2. Thus, the ferromagnetic coupling is weak in ZnO:Mn. Chromium co-doping greatly enhance the ferromagnetism, especially when using configuration2. At last, we present the 2D and 3D spin-density distribution of ZnO:Mn and ZnO:(Mn,Cr) where the ferromagnetic state in ZnO:(Mn,Cr) comes from the strong p-d and d-d interactions between 2p-O, 3d-Mn and 3d-Cr electrons. The results of our calculations suggest that the co-doping ZnO(Mn, Cr) can be among DMS behavior for spintronic applications.

  2. Breatherlike impurity modes in discrete nonlinear lattices

    DEFF Research Database (Denmark)

    Hennig, D.; Rasmussen, Kim; Tsironis, G. P.

    1995-01-01

    We investigate the properties of a disordered generalized discrete nonlinear Schrodinger equation, containing both diagonal and nondiagonal nonlinear terms. The equation models a Linear host lattice doped with nonlinear impurities. We find different types of impurity states that form itinerant...

  3. Doping Li-rich cathode material Li2MnO3 : Interplay between lattice site preference, electronic structure, and delithiation mechanism

    Science.gov (United States)

    Hoang, Khang

    2017-12-01

    We report a detailed first-principles study of doping in Li2MnO3 , in both the dilute doping limit and heavy doping, using hybrid density-functional calculations. We find that Al, Fe, Mo, and Ru impurities are energetically most favorable when incorporated into Li2MnO3 at the Mn site, whereas Mg is most favorable when doped at the Li sites. Nickel, on the other hand, can be incorporated at the Li site and/or the Mn site, and the distribution of Ni over the lattice sites can be tuned by tuning the material preparation conditions. There is a strong interplay among the lattice site preference and charge and spin states of the dopant, the electronic structure of the doped material, and the delithiation mechanism. The calculated electronic structure and voltage profile indicate that in Ni-, Mo-, or Ru-doped Li2MnO3 , oxidation occurs on the electrochemically active transition-metal ion(s) before it does on oxygen during the delithiation process. The role of the dopants is to provide charge compensation and bulk electronic conduction mechanisms in the initial stages of delithiation, hence enabling the oxidation of the lattice oxygen in the later stages. This work thus illustrates how the oxygen-oxidation mechanism can be used in combination with the conventional mechanism involving transition-metal cations in design of high-capacity battery cathode materials.

  4. Impurity sublattice localization in ZnO revealed by li marker diffusion

    DEFF Research Database (Denmark)

    Azarov, A.Yu.; Knutsen, K.E.; Neuvonen, P.T.

    2013-01-01

    Sublattice localization of impurities in compound semiconductors, e.g., ZnO, determines their electronic and optical action. Despite that the impurity position may be envisaged based on charge considerations, the actual localization is often unknown, limiting our understanding of the incorporation...... and possible doping mechanisms. In this study, we demonstrate that the preferential sublattice occupation for a number of impurities in ZnO can be revealed by monitoring Li diffusion. In particular, using ion implantation, the impurity incorporation into the Zn sublattice (holds for, B, Mg, P, Ag, Cd, and Sb...

  5. Effect of the hydrostatic pressure on the electron mobility in delta-doped systems

    Energy Technology Data Exchange (ETDEWEB)

    Oubram, O; Mora-Ramos, M E; Gaggero-Sager, L M, E-mail: 1gaggero@uaem.m [Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Av. Universidad 1001, CP 62209, Cuernavaca, Morelos (Mexico)

    2009-05-01

    The influence of hydrostatic pressure on the electron states and low-temperature mobility in n-type GaAs delta-doped single quantum wells is studied. Values of hydrostatic pressure consider are below the so-called GAMMA-X crossover, keeping all attention in the electronic properties at the Brillouin zone center. The effect of the pressure on the electron mobility is described via a relative quantity that is proportional to the ratio between P not = 0 and zero pressure results. Calculation is performed using an analytical description of the potential energy function profile, based on the Thomas-Fermi approach, taking explicitly into account the dependence upon P of the main input parameters: effective masses and dielectric constant. The relative mobility increases for higher values of P. The cases of zero and finite -although small- temperature are studied, showing that the influence of T is mainly to lower the values of the relative mobility in the entire range of P considered. Numerical results are reported for a two-dimensional density of ionized impurities equals to 7.5 x 10{sup 12} cm{sup -2}.

  6. Superfluid phase stiffness in electron doped superconducting Gd-123

    Science.gov (United States)

    Das, P.; Ghosh, Ajay Kumar

    2018-05-01

    Current-voltage characteristics of Ce substituted Gd-123 superconductor exhibits nonlinearity below a certain temperature below the critical temperature. An exponent is extracted using the nonlinearity of current-voltage relation. Superfluid phase stiffness has been studied as a function of temperature following the Ambegaokar-Halperin-Nelson-Siggia (AHNS) theory. Phase stiffness of the superfluid below the superconducting transition is found to be sensitive to the change in the carrier concentration in superconducting system. There may be a crucial electron density which affects superfluid stiffness strongly. Electron doping is found to be effective even if the coupling of the superconducting planes is changed.

  7. Dynamical spin susceptibility of electron-doped high-Tc cuprates. Comparison with hole-doped systems

    International Nuclear Information System (INIS)

    Suzuki, Atsuo; Mutou, Tetsuya; Tanaka, Syunsuke; Hirashima, Dai S.

    2010-01-01

    The magnetic excitation spectrum of electron-doped copper oxide superconductors is studied by calculating the dynamical spin susceptibility of the two-dimensional Hubbard model in which a d x2-y2 -wave superconducting order parameter is assumed. The spectrum of electron-doped systems is compared with that of hole-doped systems, and the relationship between the frequency at which a peak grows in the spectrum and the superconducting energy gap at a hot spot is investigated. A peak may be observed even when the magnetic resonance condition is not exactly satisfied. We find that, in the electron-doped systems, the resonance condition is less likely to be satisfied than in the hole-doped systems because of the small density of states around the hot spots, and the peak frequency is close to twice the gap magnitude at the hot spots. (author)

  8. Stacking change in MoS2 bilayers induced by interstitial Mo impurities.

    Science.gov (United States)

    Cortés, Natalia; Rosales, Luis; Orellana, Pedro A; Ayuela, Andrés; González, Jhon W

    2018-02-01

    We use a theoretical approach to reveal the electronic and structural properties of molybdenum impurities between MoS 2 bilayers. We find that interstitial Mo impurities are able to reverse the well-known stability order of the pristine bilayer, because the most stable form of stacking changes from AA' (undoped) into AB' (doped). The occurrence of Mo impurities in different positions shows their split electronic levels in the energy gap, following octahedral and tetrahedral crystal fields. The energy stability is related to the accommodation of Mo impurities compacted in hollow sites between layers. Other less stable configurations for Mo dopants have larger interlayer distances and band gaps than those for the most stable stacking. Our findings suggest possible applications such as exciton trapping in layers around impurities, and the control of bilayer stacking by Mo impurities in the growth process.

  9. Variational method for magnetic impurities in metals: impurity pairs

    Energy Technology Data Exchange (ETDEWEB)

    Oles, A M [Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany, F.R.); Chao, K A [Linkoeping Univ. (Sweden). Dept. of Physics and Measurement Technology

    1980-01-01

    Applying a variational method to the generalized Wolff model, we have investigated the effect of impurity-impurity interaction on the formation of local moments in the ground state. The direct coupling between the impurities is found to be more important than the interaction between the impurities and the host conduction electrons, as far as the formation of local moments is concerned. Under certain conditions we also observe different valences on different impurities.

  10. Effect of B, N, Ge, Sn, K doping on electronic-transport properties of (5, 0) zigzag carbon nanotube

    Science.gov (United States)

    Kamalian, Monir; Seyed Jalili, Yousef; Abbasi, Afshin

    2018-04-01

    In this paper the effect of impurity on the electronic properties and quantum conductance of zigzag (5, 0) carbon nanotube have been studied by using the Density Functional Theory (DFT) combined with Non-Equilibrium Green’s Function (NEGF) formalism with TranSIESTA software. The effect of Boron (B), Nitrogen (N), Germanium (Ge), Tin (Sn) and Potassium (K) impurities on the CNT conduction behavior and physical characteristics, like density of states (DOS), band structure, transmission coefficients and quantum conductance was considered and discussed simultaneously. The current‑voltage (I‑V) curves of all the proposed models were studied for comparative study under low-bias conditions. The distinct changes in conductance reported as the positions, number and type of dopants was varied in central region of the CNT between two electrodes at different bias voltages. This suggested conductance enhancement mechanism for the charge transport in the doped CNT at different positions is important for the design of CNT based nanoelectronic devices. The results show that Germanium, Tin and Potassium dopant atoms has increased the conductance of the model manifold than other doping atoms furthermore 10 Boron and 10 Nitrogen dopant atoms showed the amazing property of Negative Differential Resistance (NDR).

  11. Thermal coupling in low fields between the nuclear and electronic spins in Tm2+ doped CaF2

    International Nuclear Information System (INIS)

    Urbina, Cristian.

    1977-01-01

    It is shown that in a CaF 2 crystal doped with divalent thulium ions there is in low fields, a thermal coupling between the electron magnetic moments of Tm 2+ and the nuclear moments of 19 F. When these ones have been lowered down to temperature through dynamical high-field polarization and adiabatic demagnetization in succession the resulting polarisation of the formed ones can overstep their original polarization in high field. A trial is given to explain this Zeeman electronic energy cooling through nuclear Zeeman energy with invoking a thermal coupling between both systems through the spin-spin electronic interaction but no theoretical model is developed in view of a quantitative explanation of the dynamics of such a process. The magnetic resonance spectrum of Tm 2 + in low field is also investigated: an important shift and narrowing of the electron resonance line in low field are obtained when 19 F nuclei are very cold. This special spectral characters are explained as due to magnetic interactions between electronic impurities and the neighbouring 19 F nuclei and a theoretical model is developed (based on the local Weiss field approximation) which explains rather well the changes in the spectral shift as a function of the 19 F nucleus temperature. A second theoretical model has also been developed in view of a quantitative explanation of both the narrowing and shift of the spectrum, but its prediction disagree with the experimental results. It is shown that in low fieldsx it is possible to get rid of paramagnetic impurities after they have been reused as reducing agents for 19 F nucleus entropy populating at about 80%, a non magnetic metastable state with these impurities [fr

  12. Investigation of energy levels of Er-impurity centers in Si by the method of ballistic electron emission spectroscopy

    International Nuclear Information System (INIS)

    Filatov, D. O.; Zimovets, I. A.; Isakov, M. A.; Kuznetsov, V. P.; Kornaukhov, A. V.

    2011-01-01

    The method of ballistic electron emission spectroscopy is used for the first time to study the energy spectrum of Er-impurity complexes in Si. The features are observed in the ballistic electron spectra of mesa diodes based on p + -n + Si structures with a thin (∼30 nm) p + -Si:Er surface layer in the region of ballistic-electron energies eV t lower than the conduction-band-edge energy E c in this layer. They are associated with the tunnel injection of ballistic electrons from the probe of the scanning tunnel microscope to the deep donor levels of the Er-impurity complexes in the p + -Si:Er layer with subsequent thermal excitation into the conduction band and the diffusion to the p + -n + junction and the direct tunneling in it. To verify this assumption, the ballistic-electron transport was simulated in the system of the Pt probe, native-oxide layer SiO 2 -p + -Si:Er-n + , and Si substrate. By approximating the experimental ballistic-electron spectra with the modeling spectra, the ground-state energy of the Er complex in Si was determined: E d ≈ E c − 0.27 eV. The indicated value is consistent with the data published previously and obtained from the measurements of the temperature dependence of the free-carrier concentration in Si:Er layers.

  13. Electron stripping cross sections for light impurity ions in colliding with atomic hydrogens relevant to fusion research

    International Nuclear Information System (INIS)

    Tawara, H.

    1992-04-01

    Electron stripping (ionization) cross sections for impurity (carbon) ions with various charge states in collisions with atomic hydrogens have been surveyed. It has been found that these data are relatively limited both in collision energy and charge state and, in particular those necessary for high energy neutral beam injection (NBI) heating in fusion plasma research are scarce. Some relevant cross sections for carbon ions, C q+ (q = 0-5) have been estimated, based upon the existing data, empirical behavior and electron impact ionization data. (author)

  14. Boron, nitrogen, and nickel impurities in GeC nanoribbons: A first-principles investigation

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Zhuo; Li, Yangping, E-mail: liyp@nwpu.edu.cn; Liu, Zhengtang

    2017-07-01

    Highlights: • The impurities preferentially substitutes the Ge atom at the ribbon edge. • The impurities could result in a reduction of the band gap of 7-AGeCNR. • The impurities turns the metallic behavior of 4-ZGeCNR into semiconductor. • The impurities could change the magnetic moment of 4-ZGeCNR. • The impurities could introduce magnetic moments into the non-magnetic 7-AGeCNR. - Abstract: Using first-principles calculations based on the density functional theory we investigated the structural, electronic and magnetic properties of substitutional boron, nitrogen, and nickel impurities in germanium carbide (GeC) nanoribbons. Hydrogen terminated GeC ribbons with armchair and zigzag edges are considered here. We observed that all three impurities preferentially substitutes the Ge atom at the ribbon edge. In addition, the electronic band structures of the doped systems indicate that (i) the impurities could introduce impurity bands in the band gap and resulting in a reduction of the band gap of 7-AGeCNR, (ii) the metallic behavior of 4-ZGeCNR turns into semiconductor because of the incorporation of the impurities, (iii) the impurities could change the magnetic moment of 4-ZGeCNR and even introduce magnetic moment into the non-magnetic 7-AGeCNR.

  15. Intrinsic and impurity defects in chromium-doped SrTiO.sub.3./sub. nanopowders: EPR and NMR study

    Czech Academy of Sciences Publication Activity Database

    Bykov, I.; Makarova, Marina; Trepakov, Vladimír; Dejneka, Alexandr; Yurchenko, L.; Jäger, Aleš; Jastrabík, Lubomír

    2013-01-01

    Roč. 250, č. 4 (2013), s. 821-824 ISSN 0370-1972 R&D Projects: GA ČR GAP108/12/1941; GA MŠk(CZ) LM2011026 Institutional support: RVO:68378271 Keywords : defects * impurity * nanopowders * radiospectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.605, year: 2013

  16. Epitaxial stabilization of ultra thin films of electron doped manganites

    Energy Technology Data Exchange (ETDEWEB)

    Middey, S., E-mail: smiddey@uark.edu; Kareev, M.; Meyers, D.; Liu, X.; Cao, Y.; Tripathi, S.; Chakhalian, J. [Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Yazici, D.; Maple, M. B. [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States); Ryan, P. J.; Freeland, J. W. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

    2014-05-19

    Ultra-thin films of the electron doped manganite La{sub 0.8}Ce{sub 0.2}MnO{sub 3} were grown in a layer-by-layer growth mode on SrTiO{sub 3} (001) substrates by pulsed laser interval deposition. High structural quality and surface morphology were confirmed by a combination of synchrotron based x-ray diffraction and atomic force microscopy. Resonant X-ray absorption spectroscopy measurements confirm the presence of Ce{sup 4+} and Mn{sup 2+} ions. In addition, the electron doping signature was corroborated by Hall effect measurements. All grown films show a ferromagnetic ground state as revealed by both dc magnetization and x-ray magnetic circular dichroism measurements and remain insulating contrary to earlier reports of a metal-insulator transition. Our results hint at the possibility of electron-hole asymmetry in the colossal magnetoresistive manganite phase diagram akin to the high-T{sub c} cuprates.

  17. Effects of grain morphology, microstructure and dispersed metal cocatalyst on the photoreduction of water over impurity-doped LaInO3

    International Nuclear Information System (INIS)

    Dhanasekaran, P.; Gupta, N.M.

    2012-01-01

    Graphical abstract: Grain morphology, doping of an impurity, microstructure, and metal/oxide contacts play a crucial role in the photocatalytic water decomposition activity of metal dispersed LaInO 3 . Highlights: ► LaInO 3 displays two-step H 2 evolution from UV-induced photoreduction of pure water. ► Preparation-controlled particle morphology plays a key role in photoactivity. ► Doping-induced activity enhancement relates to inter-bandgap charge trapping states. ► Dispersion and metal/oxide contacts may govern the performance of a cocatalyst. -- Abstract: The single phase lanthanum indates doped with Ga (for La) and N (for O), i.e. La 1−x Ga x InO 3 (0 ≤ x ≤ 0.2) and LaInO 1−y N y (y ∼ 0.6), exhibit significant activity for photoreduction of water; the yield of H 2 produced depending on dopant, excitation source, and addition of a sacrificial reagent. The two-step H 2 evolution observed for this reaction corresponds with the two distinct absorbance regimes displayed by these materials, one in UV-region due to bandgap excitation and the other in visible region arising from the transitions involving sub-bandgap donor or acceptor energy states. The photocatalytic activity of these d 10 metal oxides increases on coating with a metal/metal oxide co-catalyst, gold exhibiting superior activity to Pt and NiO, irrespective of excitation source and sample composition. The preparation-controlled particle morphology, doping-induced lattice imperfections, and metal/semiconductor hetero-junctions are envisaged to play a key role in the absorption characteristics and photocatalytic water reduction activity of metal/LaInO 3 nanocomposites.

  18. Analysis of local symmetry and impurity location of Cu2+ ions doped C8H11KO8 single crystal through EPR technique for site I

    Science.gov (United States)

    Sheela, K. Juliet; Subbulakshmi, N.; Subramanian, P.

    2018-04-01

    Electron paramagnetic resonance (EPR) studies have been investigated on Cu2+ ion incorporated into the single crystals of potassium succinate-succinic acid (KSSA) at room temperature. Two magnetically in-equivalent Cu2+ sites in the lattice are identified, among them site I has been reported. The spin Hamiltonian parameters are determined with the fitting of spectra to rhombic symmetry crystalline field. The co-ordination of the Cu2+ ion in this molecule is a distorted dodecahedron. From the calculated gxx, gyy, gzz and Axx, Ayy, Azz and their directional cosines values, location of site I impurity ion Cu2+ could be identified as a substituitional one. Also the ground state wave function of the impurity ion was found to be d2z.

  19. Electronic structure and optical properties of metal doped tetraphenylporphyrins

    Science.gov (United States)

    Shah, Esha V.; Roy, Debesh R.

    2018-05-01

    A density functional scrutiny on the structure, electronic and optical properties of metal doped tetraphenylporphyrins MTPP (M=Fe, Co, Ni) is performed. The structural stability of the molecules is evaluated based on the electronic parameters like HOMO-LUMO gap (HLG), chemical hardness (η) and binding energy of the central metal atom to the molecular frame etc. The computed UltraViolet-Visible (UV-Vis) optical absorption spectra for all the compounds are also compared. The molecular structures reported are the lowest energy configurations. The entire calculations are carried out with a widely reliable functional, viz. B3LYP with a popular basis set which includes a scaler relativistic effect, viz. LANL2DZ.

  20. Doping of wide-bandgap titanium-dioxide nanotubes: optical, electronic and magnetic properties

    Science.gov (United States)

    Alivov, Yahya; Singh, Vivek; Ding, Yuchen; Cerkovnik, Logan Jerome; Nagpal, Prashant

    2014-08-01

    Doping semiconductors is an important step for their technological application. While doping bulk semiconductors can be easily achieved, incorporating dopants in semiconductor nanostructures has proven difficult. Here, we report a facile synthesis method for doping titanium-dioxide (TiO2) nanotubes that was enabled by a new electrochemical cell design. A variety of optical, electronic and magnetic dopants were incorporated into the hollow nanotubes, and from detailed studies it is shown that the doping level can be easily tuned from low to heavily-doped semiconductors. Using desired dopants - electronic (p- or n-doped), optical (ultraviolet bandgap to infrared absorption in co-doped nanotubes), and magnetic (from paramagnetic to ferromagnetic) properties can be tailored, and these technologically important nanotubes can be useful for a variety of applications in photovoltaics, display technologies, photocatalysis, and spintronic applications.Doping semiconductors is an important step for their technological application. While doping bulk semiconductors can be easily achieved, incorporating dopants in semiconductor nanostructures has proven difficult. Here, we report a facile synthesis method for doping titanium-dioxide (TiO2) nanotubes that was enabled by a new electrochemical cell design. A variety of optical, electronic and magnetic dopants were incorporated into the hollow nanotubes, and from detailed studies it is shown that the doping level can be easily tuned from low to heavily-doped semiconductors. Using desired dopants - electronic (p- or n-doped), optical (ultraviolet bandgap to infrared absorption in co-doped nanotubes), and magnetic (from paramagnetic to ferromagnetic) properties can be tailored, and these technologically important nanotubes can be useful for a variety of applications in photovoltaics, display technologies, photocatalysis, and spintronic applications. Electronic supplementary information (ESI) available: See DOI: 10.1039/c4nr02417f

  1. Analysis of the electronic structures of 3d transition metals doped CuGaS2 based on DFT calculations

    International Nuclear Information System (INIS)

    Zhao Zongyan; Zhou Dacheng; Yi Juan

    2014-01-01

    3d transition metals doped CuGaS 2 are considered as possible absorbing material candidates for intermediated band thin film solar cells. The electronic structure and optical properties of 3d transition metals doped CuGaS 2 are investigated by using density functional theory calculations with the GGA + U method in the present work. The doping with 3d transition metals does not obviously change the crystal structure, band gap, and optical absorption edge of the CuGaS 2 host. However, in the case of CuGa 1−x TM x S 2 (TM = Ti, V, Cr, Fe, and Ni), there is at least one distinct isolated impurity energy level in the band gap, and the optical absorption is enhanced in the ultraviolet-light region. Therefore, these materials are ideal absorber material candidates for intermediated band thin film solar cells. The calculated results are very well consistent with experimental observations, and could better explain them. (semiconductor materials)

  2. Electronic properties of pure and p-type doped hexagonal sheets and zigzag nanoribbons of InP

    International Nuclear Information System (INIS)

    Longo, R C; Carrete, J; Alemany, M M G; Gallego, L J

    2013-01-01

    Unlike graphene, a hexagonal InP sheet (HInPS) cannot be obtained by mechanical exfoliation from the native bulk InP, which crystallizes in the zinc blende structure under ambient conditions. However, by ab initio density functional theory calculations we found that a slightly buckled HInPS is stable both in pristine form and when doped with Zn atoms; the same occurred for hydrogen-passivated zigzag InP nanoribbons (ZInPNRs), quasi-one-dimensional versions of the quasi-two-dimensional material. We investigated the electronic properties of both nanostructures, in the latter case also in the presence of an external transverse electric field, and the results are compared with those of hypothetical planar HInPS and ZInPNRs. The band gaps of planar ZInPNRs were found to be tunable by the choice of strength of this field, and to show an asymmetric behavior under weak electric fields, by which the gap can either be increased or decreased depending on their direction; however, this effect is absent from slightly buckled ZInPNRs. The binding energies of the acceptor impurity states of Zn-doped HInPS and ZInPNRs were found to be similar and much larger than that of Zn-doped bulk InP. These latter findings show that the reduction of the dimensionality of these materials limits the presence of free carriers. (paper)

  3. Noise-driven diamagnetic susceptibility of impurity doped quantum dots: Role of anisotropy, position-dependent effective mass and position-dependent dielectric screening function

    International Nuclear Information System (INIS)

    Bera, Aindrila; Saha, Surajit; Ganguly, Jayanta; Ghosh, Manas

    2016-01-01

    Highlights: • Diamagnetic susceptibility (DMS) of doped quantum dot is studied. • The dot is subjected to Gaussian white noise. • Role of anisotropy, PDEM and PDDSF have been analyzed. • Noise amplifies and suppresses DMS depending on particular condition. • Findings bear significant technological importance. - Abstract: We explore Diamagnetic susceptibility (DMS) of impurity doped quantum dot (QD) in presence of Gaussian white noise introduced to the system additively and multiplicatively. In view of this profiles of DMS have been pursued with variations of geometrical anisotropy and dopant location. We have invoked position-dependent effective mass (PDEM) and position-dependent dielectric screening function (PDDSF) of the system. Presence of noise sometimes suppresses and sometimes amplifies DMS from that of noise-free condition and the extent of suppression/amplification depends on mode of application of noise. It is important to mention that the said suppression/amplification exhibits subtle dependence on use of PDEM, PDDSF and geometrical anisotropy. The study reveals that DMS, or more fundamentally, the effective confinement of LDSS, can be tuned by appropriate mingling of geometrical anisotropy/effective mass/dielectric constant of the system with noise and also on the pathway of application of latter.

  4. Effect of In-Doping on Electronic Structure and Optical Properties of Sr2TiO4

    International Nuclear Information System (INIS)

    Jiang-Ni, Yun; Zhi-Yong, Zhang; Jun-Feng, Yan; Fu-Chun, Zhang

    2009-01-01

    The effect of In doping on the electronic structure and optical properties of Sr 2 TiO 4 is investigated by a first-principles calculation of plane wave ultrasoft pseudopotentials based on density functional theory. The calculated results reveal that corner-shared TiO 6 octahedra dominate the main electronic properties of Sr 2 TiO 4 and the covalency of the Ti–O(1) bond in the ab plane is stronger than that of the Ti–O(2) bond along the c-axis. After In doping, there is a little lattice expansion in Sr 2 In 0.125 Ti 0.875 O 4 , and the interaction between the Ti–O bond near the impurity In atom is weakened. The binding energies of Sr 2 TiO 4 and Sr 2 In 0.125 Ti 0.875 O 4 , estimated from the electronic structure calculations indicate that the crystal structure of Sr 2 In 0.125 Ti 0.875 O 4 is still stable after doping, but its stability is lower than that of undoped Sr 2 TiO 4 . Moreover, the valence bands (VBs) of the Sr 2 In 0.125 Ti 0.875 O 4 , system consist of O 2p and In 4d states, and the mixing of O 2p and In 4d states makes the top VBs shift significantly to high energies, resulting in visible light absorption. The adsorption of visible light is of practical importance for the application of Sr 2 TiO 4 as a photocatalyst. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  5. Behaviour of superconductivity energetic characteristics in electron-doped cuprates. A simple model

    International Nuclear Information System (INIS)

    Kristoffel, N.; Rubin, P.

    2008-01-01

    A simple model to describe the energetic phase diagram of electron-doped cuprate superconductor is developed. Interband pairing operates between the UHB and the defect states created by doping and supplied by both extincting HB-s. Two defect subbands correspond to the (π,0) and (π/2,π/2) momentum regions. Extended doping quenches the bare normal state gaps (pseudogaps). Maximal transition temperature corresponds to overlapping bands ensemble intersected by the chemical potential. Illustrative results for T c , pseudo- and superconducting gaps are calculated on the whole doping scale. Major characteristic features on the phase diagram are reproduced. Anticipated manifestation of gaps doping dynamics is discussed

  6. Electron transport in heavily doped GdN

    Science.gov (United States)

    Maity, T.; Trodahl, H. J.; Natali, F.; Ruck, B. J.; Vézian, S.

    2018-01-01

    We report measurements of electron transport phenomena in the intrinsic ferromagnetic semiconductor GdN doped with 1.3 ×1021cm-3 electrons. The conductivity, carrier concentration, and thermoelectric power are compared with expectations based on an LSDA+U band structure. In the ferromagnetic state the carriers fill the majority-spin conduction band pockets to the bottom of the minority-spin band. The resistance implies an electron mobility of 18 cm2V-1s-1 at zero temperature, and in turn a mean-free path of 10-30 nm. Spin disorder scattering rapidly reduces the mobility near the 70 K Curie temperature (TC). The thermoelectric power is negative in the paramagnetic phase, as expected for a n -type conductor, with a magnitude that is in agreement with the Fermi energy implied by the band structure. The thermopower reverses sign to be positive in the ferromagnetic phase, which correlates with a strongly temperature-dependent electron diffusion from spin-disorder scattering that increases rapidly as the temperature rises toward TC.

  7. Electron paramagnetic resonance in Cu-doped ZnO

    Science.gov (United States)

    Buchheit, R.; Acosta-Humánez, F.; Almanza, O.

    2016-04-01

    In this work, ZnO and Cu-doped ZnO nanoparticles (Zn1-xCuxO, x = 3%), with a calcination temperature of 500∘C were synthesized using the sol-gel method. The particles were analyzed using atomic absorption spectroscopy (AAS), X-ray diffraction (XRD) and electron paramagnetic resonance (EPR) at X-band, measurement in a temperature range from 90 K to room temperature. AAS confirmed a good correspondence between the experimental doping concentration and the theoretical value. XRD reveals the presence of ZnO phase in hexagonal wurtzite structure and a nanoparticle size for the samples synthesized. EPR spectroscopy shows the presence of point defects in both samples with g-values of g = 1.959 for shallow donors and g = 2.004 for ionized vacancies. It is important when these materials are required have been used as catalysts, as suggested that it is not necessary prepare them at higher temperature. A simulation of the Cu EPR signal using an anisotropic spin Hamiltonian was performed and showed good coincidence with the experimental spectra. It was shown that Cu2+ ions enter interstitial octahedral sites of orthorhombic symmetry in the wurtzite crystal structure. Temperature dependence of the EPR linewidth and signal intensity shows a paramagnetic behavior of the sample in the measurement range. A Néel temperature TN = 78 ± 19 K was determined.

  8. First-Principles Study on the Structural and Electronic Properties of N Atoms Doped-Rutile TiO2 of Oxygen Vacancies

    Directory of Open Access Journals (Sweden)

    Zhong-Liang Zeng

    2015-01-01

    Full Text Available For the propose of considering the actual situation of electronic neutral, a simulation has been down on the basis of choosing the position of dual N and researching the oxygen vacancy. It is found that the reason why crystal material gets smaller is due to the emergence of impurity levels. By introducing the oxygen vacancy to the structure, the results show that while the oxygen vacancy is near the two nitrogen atoms which have a back to back position, its energy gets the lowest level and its structure gets the most stable state. From its energy band structure and density, the author finds that the impurity elements do not affect the migration of Fermi level while the oxygen vacancy has been increased. Instead of that, the conduction band of metal atoms moves to the Fermi level and then forms the N-type semiconductor material, but the photocatalytic activity is not as good as the dual N-doping state.

  9. Microscopic insight into properties and electronic instabilities of impurities in cubic and lower symmetry insulators: the influence of pressure

    Energy Technology Data Exchange (ETDEWEB)

    Moreno, M [Departamento de Ciencias de la Tierra y Fisica de la Materia Condensada, Universidad de Cantabria, 39005 Santander (Spain); Barriuso, M T [Departamento de Fisica Moderna, Universidad de Cantabria, 39005 Santander (Spain); Aramburu, J A [Departamento de Ciencias de la Tierra y Fisica de la Materia Condensada, Universidad de Cantabria, 39005 Santander (Spain); GarcIa-Fernandez, P [Departamento de Ciencias de la Tierra y Fisica de la Materia Condensada, Universidad de Cantabria, 39005 Santander (Spain); GarcIa-Lastra, J M [Departamento de Fisica Moderna, Universidad de Cantabria, 39005 Santander (Spain)

    2006-05-03

    This article reviews the microscopic origin of properties due to transition-metal (TM) impurities, M, in insulator materials. Particular attention is paid to the influence of pressure upon impurity properties. Basic concepts such as the electronic localization in an MX{sub N} complex, the electrostatic potential, V{sub R}, arising from the rest of the lattice ions or the elastic coupling of the complex to the host lattice are initially exposed. The dependence of optical and magnetic parameters on the impurity-ligand distance, R, in cubic lattices is discussed in a first step. Emphasis is put on the actual origin of the R dependence of 10Dq. Examples revealing that laws for strict cubic symmetry cannot in general be transferred to lower symmetries are later given. This relevant fact is shown to come from allowed hybridizations like nd-(n+1)s as well as the influence of V{sub R}. As a salient feature the different colour in ruby and emerald is stressed to arise from distinct V{sub R} potentials in Al{sub 2}O{sub 3} and Be{sub 3}Si{sub 6}Al{sub 2}O{sub 18}. The last part of this review deals with electronic instabilities. The phenomena associated with the Jahn-Teller (JT) effect in cubic lattices, the origin of the energy barrier among equivalent minima and the existence of coherent tunnelling in systems like MgO:Cu{sup 2+} are discussed. An increase of elastic coupling is pointed out to favour a transition from an elongated to a compressed equilibrium conformation. Interestingly the equilibrium geometry of JT ions in non-cubic lattices is shown to be controlled by mechanisms different to those in cubic systems, V{sub R} playing again a key role. The relevance of first principles calculations for clarifying the subtle mechanisms behind off-centre instabilities is also pointed out. Examples concern monovalent and divalent TM impurities in lattices with the CaF{sub 2} structure. The instability due to the transition from the ground to an excited state is finally

  10. Microscopic insight into properties and electronic instabilities of impurities in cubic and lower symmetry insulators: the influence of pressure

    International Nuclear Information System (INIS)

    Moreno, M; Barriuso, M T; Aramburu, J A; GarcIa-Fernandez, P; GarcIa-Lastra, J M

    2006-01-01

    This article reviews the microscopic origin of properties due to transition-metal (TM) impurities, M, in insulator materials. Particular attention is paid to the influence of pressure upon impurity properties. Basic concepts such as the electronic localization in an MX N complex, the electrostatic potential, V R , arising from the rest of the lattice ions or the elastic coupling of the complex to the host lattice are initially exposed. The dependence of optical and magnetic parameters on the impurity-ligand distance, R, in cubic lattices is discussed in a first step. Emphasis is put on the actual origin of the R dependence of 10Dq. Examples revealing that laws for strict cubic symmetry cannot in general be transferred to lower symmetries are later given. This relevant fact is shown to come from allowed hybridizations like nd-(n+1)s as well as the influence of V R . As a salient feature the different colour in ruby and emerald is stressed to arise from distinct V R potentials in Al 2 O 3 and Be 3 Si 6 Al 2 O 18 . The last part of this review deals with electronic instabilities. The phenomena associated with the Jahn-Teller (JT) effect in cubic lattices, the origin of the energy barrier among equivalent minima and the existence of coherent tunnelling in systems like MgO:Cu 2+ are discussed. An increase of elastic coupling is pointed out to favour a transition from an elongated to a compressed equilibrium conformation. Interestingly the equilibrium geometry of JT ions in non-cubic lattices is shown to be controlled by mechanisms different to those in cubic systems, V R playing again a key role. The relevance of first principles calculations for clarifying the subtle mechanisms behind off-centre instabilities is also pointed out. Examples concern monovalent and divalent TM impurities in lattices with the CaF 2 structure. The instability due to the transition from the ground to an excited state is finally considered. For complexes with significant elastic coupling

  11. Microscopic insight into properties and electronic instabilities of impurities in cubic and lower symmetry insulators: the influence of pressure.

    Science.gov (United States)

    Moreno, M; Barriuso, M T; Aramburu, J A; García-Fernández, P; García-Lastra, J M

    2006-05-03

    This article reviews the microscopic origin of properties due to transition-metal (TM) impurities, M, in insulator materials. Particular attention is paid to the influence of pressure upon impurity properties. Basic concepts such as the electronic localization in an MX(N) complex, the electrostatic potential, V(R), arising from the rest of the lattice ions or the elastic coupling of the complex to the host lattice are initially exposed. The dependence of optical and magnetic parameters on the impurity-ligand distance, R, in cubic lattices is discussed in a first step. Emphasis is put on the actual origin of the R dependence of 10Dq. Examples revealing that laws for strict cubic symmetry cannot in general be transferred to lower symmetries are later given. This relevant fact is shown to come from allowed hybridizations like nd-(n+1)s as well as the influence of V(R). As a salient feature the different colour in ruby and emerald is stressed to arise from distinct V(R) potentials in Al(2)O(3) and Be(3)Si(6)Al(2)O(18). The last part of this review deals with electronic instabilities. The phenomena associated with the Jahn-Teller (JT) effect in cubic lattices, the origin of the energy barrier among equivalent minima and the existence of coherent tunnelling in systems like MgO:Cu(2+) are discussed. An increase of elastic coupling is pointed out to favour a transition from an elongated to a compressed equilibrium conformation. Interestingly the equilibrium geometry of JT ions in non-cubic lattices is shown to be controlled by mechanisms different to those in cubic systems, V(R) playing again a key role. The relevance of first principles calculations for clarifying the subtle mechanisms behind off-centre instabilities is also pointed out. Examples concern monovalent and divalent TM impurities in lattices with the CaF(2) structure. The instability due to the transition from the ground to an excited state is finally considered. For complexes with significant elastic coupling

  12. Electronic properites of electron-doped cuprate superconductors probed by high-field magnetotransport

    International Nuclear Information System (INIS)

    Helm, Toni

    2013-01-01

    In the present work the normal-state properties of the electron-doped cuprate superconductor Nd 2-x Ce x CuO 4 (NCCO) are investigated for a broad doping range, covering almost the whole phase diagram of this material. Magnetotransport measurements in the world's highest non-destructive magnetic fields were used as a spectroscopic tool for probing the electronic structure of single-crystalline NCCO as a function of the carrier concentration x. Quantum and semiclassical oscillations in the magnetoresistance provided new insights into various properties of the Fermi surface and the nature of the ground state in the system. The detailed investigations of the field- and temperature-dependent transport and its dependence on the field orientation have revealed a close correlation between symmetry-breaking ordering instabilities and the superconducting state.

  13. Electronic properites of electron-doped cuprate superconductors probed by high-field magnetotransport

    Energy Technology Data Exchange (ETDEWEB)

    Helm, Toni

    2013-09-18

    In the present work the normal-state properties of the electron-doped cuprate superconductor Nd{sub 2-x}Ce{sub x}CuO{sub 4} (NCCO) are investigated for a broad doping range, covering almost the whole phase diagram of this material. Magnetotransport measurements in the world's highest non-destructive magnetic fields were used as a spectroscopic tool for probing the electronic structure of single-crystalline NCCO as a function of the carrier concentration x. Quantum and semiclassical oscillations in the magnetoresistance provided new insights into various properties of the Fermi surface and the nature of the ground state in the system. The detailed investigations of the field- and temperature-dependent transport and its dependence on the field orientation have revealed a close correlation between symmetry-breaking ordering instabilities and the superconducting state.

  14. Electronic properites of electron-doped cuprate superconductors probed by high-field magnetotransport

    Energy Technology Data Exchange (ETDEWEB)

    Helm, Toni

    2013-09-18

    In the present work the normal-state properties of the electron-doped cuprate superconductor Nd{sub 2-x}Ce{sub x}CuO{sub 4} (NCCO) are investigated for a broad doping range, covering almost the whole phase diagram of this material. Magnetotransport measurements in the world's highest non-destructive magnetic fields were used as a spectroscopic tool for probing the electronic structure of single-crystalline NCCO as a function of the carrier concentration x. Quantum and semiclassical oscillations in the magnetoresistance provided new insights into various properties of the Fermi surface and the nature of the ground state in the system. The detailed investigations of the field- and temperature-dependent transport and its dependence on the field orientation have revealed a close correlation between symmetry-breaking ordering instabilities and the superconducting state.

  15. Wetting layer effect on impurity-related electronic properties of different (In,Ga)N QD-shapes

    Science.gov (United States)

    El Ghazi, Haddou; Jorio, Anouar; Zorkani, Izeddine; Feddi, El Mustapha; El Mouchtachi, Ahmed

    2018-05-01

    In this paper, we have investigated the electronic properties of (In,Ga)N/GaN coupled wetting layer-quantum dot system using the numerical approach. The finite element method code is used to solve the Schrödinger equation, in the presence of the impurity. In our model, parallelepiped-shape, circular and square based-pyramidal and their wetting layers embedded in GaN matrix were considered. Based on the single band parabolic and the effective mass approximations, the envelop function and its corresponding energy eigenvalue are obtained assuming a finite potential barrier. Our results reveal that: (1) the wetting layer has a great influence on the electronic properties especially for a small quantum dot and acts in the opposite sense of the geometrical confinement, (2) a wetting layer-dependent critical QD-size is obtained limiting two different behaviors and (3) its effect is strongly-dependent on the quantum dot-shape.

  16. Helium like impurity in CdTe/ Cd1-xMnxTe semimagnetic semiconductors under magnetic field: Dimensionality effect on electron - Electron interaction

    Science.gov (United States)

    Kalpana, Panneer Selvam; Jayakumar, Kalyanasundaram

    2017-11-01

    We study the effect of magnetic field on the Coulomb interaction between the two electrons confined inside a CdTe/Cd1-xMnxTe Quantum Well (QW), Quantum Well Wire (QWW) and Quantum Dot (QD) for the composition of Mn2+ ion, x = 0.3. The two particle Schrodinger equation has been solved using variational technique in the effective mass approximation. The results show that the applied magnetic field tremendously alters the Coulomb interaction of the electrons and their binding to the donor impurity by shrinking the spatial extension of the two particle wavefunction and leads to tunnelling through the barrier. The qualitative phenomenon involved in such variation of electron - electron interaction with the magnetic field has also been explained through the 3D - plot of the probability density function.

  17. Electronic structure and optical properties of Al and Mg co-doped GaN

    International Nuclear Information System (INIS)

    Ji Yan-Jun; Du Yu-Jie; Wang Mei-Shan

    2013-01-01

    The electronic structure and optical properties of Al and Mg co-doped GaN are calculated from first principles using density function theory with the plane-wave ultrasoft pseudopotential method. The results show that the optimal form of p-type GaN is obtained with an appropriate Al:Mg co-doping ratio rather than with only Mg doping. Al doping weakens the interaction between Ga and N, resulting in the Ga 4s states moving to a high energy region and the system band gap widening. The optical properties of the co-doped system are calculated and compared with those of undoped GaN. The dielectric function of the co-doped system is anisotropic in the low energy region. The static refractive index and reflectivity increase, and absorption coefficient decreases. This provides the theoretical foundation for the design and application of Al—Mg co-doped GaN photoelectric materials

  18. Peculiarities of defect formation in InP single crystals doped with donor (S, Ge) and acceptor (Zn) impurities

    International Nuclear Information System (INIS)

    Morozov, A.N.; Mikryukova, E.V.; Bublik, V.T.; Berkova, A.V.; Nashel'skij, A.Ya.; Yakobson, S.V.

    1988-01-01

    Effect of alloying with donor (S,Ge) and acceptor (Zn) impurities on the concentration of proper point defects in monocrystals InP grown up from equiatomic (relative to In and P) melts by the Czochralski method under flux layer is investigated. Changes in boundary positions of the InP homogeneity region caused by alloying are analysed on the basis of experimental results according to the precision measurement of the lattice parameter and crystal density, as well as measurements of the Hall concentration of charge carriers and their mobility. The concentrations of Frenkel nonequilibrium (V in -In i ) defects formed in the initial stage of indium solid solution decomposition in InP are estimated

  19. Modulation of electronic transport properties in armchair phosphorene nanoribbons by doping and edge passivation.

    Science.gov (United States)

    Guo, Caixia; Wang, Tianxing; Xia, Congxin; Liu, Yufang

    2017-10-09

    The electronic structures and transport properties of group IV atoms (C, Si, Ge)-doped armchair phosphorene nanoribbons (APNRs) are investigated using first-principles calculations, considering different edge passivation. The results show that the C, Si, Ge dopants can induce the transition occur from semiconductor to metal in the APNRs. The negative differential resistance (NDR) behavior in the doped APNR system is robust with respect to the doping concentration and edge passivation type. However, their current peak positions and peak-to-valley ratio (PVR) values are correlated with doping concentration and edge passivation type. In particular, for the C, Si-doped APNRs, the low bias NDR behavior with the PVR (10 5 -10 8 ) can be observed when doping concentration is low in the APNRs with the F and H edge passivation. These results may play an important role for the fabrication of future low power consumption nano-electronic devices.

  20. Electron paramagnetic resonance and AC susceptibility studies of Mn and Gd doped 1:2:3 superconductors

    International Nuclear Information System (INIS)

    La Robina, M.A.

    1997-01-01

    For many years superconductivity was considered to be a low temperature phenomenon occurring below ∼ 25K. All this changed in April 1986 when J. G. Bednorz and K. A. Muller showed that the oxide La 2-x Ba x CuO 4 becomes a superconductor at ∼ 30K. Later in December 1986 the oxides La 2-x Sr x CuO 4 and La 2-x Ba x CuO 4 synthesised under high pressure, were shown to superconduct at ∼ 40K and ∼ 50K, respectively. Finally in February 1987, Chu synthesised the classic superconductor YBa 2 Cu 3 O 6.8 , the so-called 1:2:3 material, which has a critical temperature circa 92K. In this thesis, electron paramagnetic resonance (EPR) and susceptibility measurements are reported on various superconductors. In 1987 Bowden et al., showed that pure phase 1:2:3 samples are characterised by an absence of Cu EPR signals. This contrasts sharply with the Green phase material, Y 2 Ba 1 Cu 1 O 5 , which shows a very large EPR signal with a g eff of 2.08. In an attempt to induce EPR signals, Mn doped 1:2:3 samples have been synthesised and characterised with EPR , AC susceptibility, XRD and SEM measurements. It is shown that Mn EPR signals are not evident in the Mn doped samples with a g eff of 2.09. Also, below T c the EPR signals of the lightly doped Mn samples vanish. It is argued that this is due to fluxoids motion within the superconductor, which gives rise to very large non-reproducible signals. It is suggested that the signals originate from Cu, impurity contaminants and multiple phases produced when the 1:2:3 superconductor is doped with Manganese (author)

  1. FLAPW Study of the EFG Tensor at Cd Impurities in In2O3

    International Nuclear Information System (INIS)

    Errico, L. A.; Renteria, M.; Fabricius, G.; Darriba, G. N.

    2004-01-01

    We report an ab initio study of the electric-field gradient tensor (EFG) at Cd impurities located at both nonequivalent cationic sites in the semiconductor In 2 O 3 . Calculations were performed with the FLAPW method that allows us to treat the electronic structure of the doped system and the atomic relaxations introduced by the impurities in the host in a fully self-consistent way. From our results for the EFG (in excellent agreement with the experiments), it is clear that the problem of the EFG at Cd impurities in In 2 O 3 cannot be described by the point-charge model and antishielding factors.

  2. Noise-modulated self-polarization effect of impurity doped quantum dots under simultaneous presence of hydrostatic pressure and temperature

    Science.gov (United States)

    Bera, Aindrila; Ghosh, Manas

    2017-10-01

    We explore the profiles of self-polarization effect (SPE) of doped GaAs QD under simultaneous presence of hydrostatic pressure (HP), temperature and in presence of noise. Noise term carries Gaussian white character and it has been administered to the system via two different pathways; additive and multiplicative. Profiles of SPE have been monitored as a function of HP, temperature and noise strength. Under a given condition of HP and temperature, noise marks its prominent signature on the SPE profile. However, the extent to which noise affects the SPE profile visibly depends on the noise strength and the pathway through which noise is introduced. As interesting observations we have found that SPE exhibits minimization at a pressure of ∼ 170 kbar in absence of noise and at ∼ 150 kbar when noise is present. Furthermore, in presence of multiplicative noise SPE exhibits a very faint decrease with increase in T up to T ∼ 420 K. However, beyond T ∼ 420 K, further increase in temperature causes abrupt fall of SPE in a highly sharp way. The findings highlight viable ways of tuning SPE of doped QD system through subtle interplay between HP, temperature and noise.

  3. Large-area uniform electron doping of graphene by Ag nanofilm

    Directory of Open Access Journals (Sweden)

    Xiaopeng Guo

    2017-04-01

    Full Text Available Graphene has attracted much attention at various research fields due to its unique optical, electronic and mechanical properties. Up to now, graphene has not been widely used in optoelectronic fields due to the lack of large-area uniform doped graphene (n-doped and p-doped with smooth surface. Therefore, it is rather desired to develop some effective doping methods to extend graphene to optoelectronics. Here we developed a novel doping method to prepare large-area (> centimeter scale uniform doped graphene film with a nanoscale roughness(RMS roughness ∼1.4 nm, the method (nano-metal film doping method is simple but effective. Using this method electron doping (electron-injection may be easily realized by the simple thermal deposition of Ag nano-film on a transferred CVD graphene. The doping effectiveness has been proved by Raman spectroscopy and spectroscopic ellipsometry. Importantly, our method sheds light on some potential applications of graphene in optoelectronic devices such as photodetectors, LEDs, phototransistors, solar cells, lasers etc.

  4. Electron field emission from undoped and doped DLC films

    International Nuclear Information System (INIS)

    Chakhovskoi, A G; Evtukh, A A; Felter, T E; Klyui, N I; Kudzinovsky, S Y; Litovchenko, V G; Litvin, Y M

    1999-01-01

    Electron field emission and electrical conductivity of undoped and nitrogen doped DLC films have been investigated. The films were grown by the PE CVD method from CH(sub 4):H(sub 2) and CH(sub 4):H(sub 2):N(sub 2) gas mixtures, respectively. By varying nitrogen content in the gas mixture over the range 0 to 45%, corresponding concentrations of 0 to 8% (atomic) could be achieved in the films. Three different gas pressures were used in the deposition chamber: 0.2, 0.6 and 0.8 Torr. Emission current measurements were performed at approximately 10(sup -6) Torr using the diode method with emitter-anode spacing set at 20(micro)m. The current - voltage characteristics of the Si field electron emission arrays covered with DLC films show that threshold voltage (V(sub th)) varies in a complex manner with nitrogen content. As a function of nitrogen content, V(sub th) initially increases rapidly, then decreases and finally increases again for the highest concentration. Corresponding Fowler-Nordheim (F-N) plots follow F-N tunneling over a wide range. The F-N plots were used for determination of the work function, threshold voltage, field enhancement factor and effective emission area. For a qualitative explanation of experimental results, we treat the DLC film as a diamond-like (sp(sup 3) bonded) matrix with graphite-like inclusions

  5. Electrical, optical, and electronic properties of Al:ZnO films in a wide doping range

    International Nuclear Information System (INIS)

    Valenti, Ilaria; Valeri, Sergio; Benedetti, Stefania; Bona, Alessandro di; Lollobrigida, Valerio; Perucchi, Andrea; Di Pietro, Paola; Lupi, Stefano; Torelli, Piero

    2015-01-01

    The combination of photoemission spectroscopies, infrared and UV-VIS absorption, and electric measurements has allowed to clarify the mechanisms governing the conductivity and the electronic properties of Al-doped ZnO (AZO) films in a wide doping range. The contribution of defect-related in-gap states to conduction has been excluded in optimally doped films (around 4 at. %). The appearance of gap states at high doping, the disappearance of occupied DOS at Fermi level, and the bands evolution complete the picture of electronic structure in AZO when doped above 4 at. %. In this situation, compensating defects deplete the conduction band and increase the electronic bandgap of the material. Electrical measurements and figure of merit determination confirm the high quality of the films obtained by magnetron sputtering, and thus allow to extend their properties to AZO films in general

  6. Electrical, optical, and electronic properties of Al:ZnO films in a wide doping range

    Energy Technology Data Exchange (ETDEWEB)

    Valenti, Ilaria; Valeri, Sergio [CNR, Istituto Nanoscienze, S3, Via G. Campi 213/a, 41125 Modena (Italy); Dipartimento di Scienze Fisiche, Informatiche e Matematiche, Università di Modena e Reggio Emilia, Via G. Campi 213/a, 41125 Modena (Italy); Benedetti, Stefania, E-mail: stefania.benedetti@unimore.it; Bona, Alessandro di [CNR, Istituto Nanoscienze, S3, Via G. Campi 213/a, 41125 Modena (Italy); Lollobrigida, Valerio [Dipartimento di Scienze, Università Roma Tre, I-00146 Rome, Italy and Dipartimento di Matematica e Fisica, Università Roma Tre, I-00146 Rome (Italy); Perucchi, Andrea; Di Pietro, Paola [INSTM Udr Trieste-ST and Elettra-Sincrotrone Trieste S.C.p.A., Area Science Park, I-34012 Trieste (Italy); Lupi, Stefano [CNR-IOM and Dipartimento di Fisica, Università di Roma Sapienza, P.le Aldo Moro 2, I-00185 Roma (Italy); Torelli, Piero [Laboratorio TASC, IOM-CNR, S.S. 14 km 163.5, Basovizza, I-34149 Trieste (Italy)

    2015-10-28

    The combination of photoemission spectroscopies, infrared and UV-VIS absorption, and electric measurements has allowed to clarify the mechanisms governing the conductivity and the electronic properties of Al-doped ZnO (AZO) films in a wide doping range. The contribution of defect-related in-gap states to conduction has been excluded in optimally doped films (around 4 at. %). The appearance of gap states at high doping, the disappearance of occupied DOS at Fermi level, and the bands evolution complete the picture of electronic structure in AZO when doped above 4 at. %. In this situation, compensating defects deplete the conduction band and increase the electronic bandgap of the material. Electrical measurements and figure of merit determination confirm the high quality of the films obtained by magnetron sputtering, and thus allow to extend their properties to AZO films in general.

  7. Electronic structure of B-doped diamond: A first-principles study

    Directory of Open Access Journals (Sweden)

    T. Oguchi

    2006-01-01

    Full Text Available Electronic structure of B-doped diamond is studied based on first-principles calculations with supercell models for substitutional and interstitial doping at 1.5–3.1 at.% B concentrations. Substitutional doping induces holes around the valence-band maximum in a rigid-band fashion. The nearest neighbor C site to B shows a large energy shift of 1s core state, which may explain reasonably experimental features in recent photoemission and X-ray absorption spectra. Doping at interstitial Td site is found to be unstable compared with that at the substitutional site

  8. The Electronic and Optical Properties of Au Doped Single-Layer Phosphorene

    Science.gov (United States)

    Zhu, Ziqing; Chen, Changpeng; Liu, Jiayi; Han, Lu

    2018-01-01

    The electronic properties and optical properties of single and double Au-doped phosphorene have been comparatively investigated using the first-principles plane-wave pseudopotential method based on density functional theory. The decrease from direct band gap 0.78 eV to indirect band gap 0.22 and 0.11 eV are observed in the single and double Au-doped phosphorene, respectively. The red shifts of absorbing edge occur in both doped systems, which consequently enhance the absorbing of infrared light in phosphorene. Band gap engineering can, therefore, be used to directly tune the optical absorption of phosphorene system by substitutional Au doping.

  9. Impurities and Electronic Property Variations of Natural MoS 2 Crystal Surfaces

    KAUST Repository

    Addou, Rafik; McDonnell, Stephen; Barrera, Diego; Guo, Zaibing; Azcatl, Angelica; Wang, Jian; Zhu, Hui; Hinkle, Christopher L.; Quevedo-Lopez, Manuel; Alshareef, Husam N.; Colombo, Luigi; Hsu, Julia W P; Wallace, Robert M.

    2015-01-01

    Room temperature X-ray photoelectron spectroscopy (XPS), inductively coupled plasma mass spectrometry (ICPMS), high resolution Rutherford backscattering spectrometry (HR-RBS), Kelvin probe method, and scanning tunneling microscopy (STM) are employed to study the properties of a freshly exfoliated surface of geological MoS2 crystals. Our findings reveal that the semiconductor 2H-MoS2 exhibits both n- and p-type behavior, and the work function as measured by the Kelvin probe is found to vary from 4.4 to 5.3 eV. The presence of impurities in parts-per-million (ppm) and a surface defect density of up to 8% of the total area could explain the variation of the Fermi level position. High resolution RBS data also show a large variation in the MoSx composition (1.8 < x < 2.05) at the surface. Thus, the variation in the conductivity, the work function, and stoichiometry across small areas of MoS2 will have to be controlled during crystal growth in order to provide high quality uniform materials for future device fabrication. © 2015 American Chemical Society.

  10. Impurities and Electronic Property Variations of Natural MoS 2 Crystal Surfaces

    KAUST Repository

    Addou, Rafik

    2015-09-22

    Room temperature X-ray photoelectron spectroscopy (XPS), inductively coupled plasma mass spectrometry (ICPMS), high resolution Rutherford backscattering spectrometry (HR-RBS), Kelvin probe method, and scanning tunneling microscopy (STM) are employed to study the properties of a freshly exfoliated surface of geological MoS2 crystals. Our findings reveal that the semiconductor 2H-MoS2 exhibits both n- and p-type behavior, and the work function as measured by the Kelvin probe is found to vary from 4.4 to 5.3 eV. The presence of impurities in parts-per-million (ppm) and a surface defect density of up to 8% of the total area could explain the variation of the Fermi level position. High resolution RBS data also show a large variation in the MoSx composition (1.8 < x < 2.05) at the surface. Thus, the variation in the conductivity, the work function, and stoichiometry across small areas of MoS2 will have to be controlled during crystal growth in order to provide high quality uniform materials for future device fabrication. © 2015 American Chemical Society.

  11. The features of the atomic structure of the impurities complexes in the irradiated materials doped by the elements with a large atomic radii

    International Nuclear Information System (INIS)

    Neklyudov, I.M.; Sleptsov, A.N.; Marchenko, I.G.; Sleptsov, S.N.

    1995-01-01

    The interaction between impurity atoms and radiation-induced defects in Ni(Sc), Ni(Ti), Ni(Pr) and Ni(Y) alloys irradiated with 5 and 30 MeV electrons were studied by the residual resistivity measurements, and the methods of reciprocal damage rate and positron annihilation. The activation energies of the main recovery stages in pure nickel (I D+E - 54 K, II 4 -250 K, III 2 - 390 K) and dilute alloys (up to 700 K) were determined. The radii trapping, r t , of self-interstitial atoms (SIA) by the Sc and Ti atoms were calculated in the temperature range 45-300 K.It is found that the scandium atoms (among all large atomic size elements) are effective traps for SIA and vacancies and form compound complexes. The binding energy of vacancy-impurity complexes are about 0.25, 0.30 and 0.6 - 0.8 eV in Ni(Ti), Ni(Y) and Ni(Sc) alloys, respectively. The solubilities of Sc, Ti, Y and Pr in nickel were deduced from the analysis of dependence of the specific residual resistivity (ρ t ) and the lattice parameter (Δa/a) on concentration. 38 refs., 3 tab., 10 figs

  12. Effect of doping on electronic states in B-doped polycrystalline CVD diamond films

    International Nuclear Information System (INIS)

    Elsherif, O S; Vernon-Parry, K D; Evans-Freeman, J H; May, P W

    2012-01-01

    High-resolution Laplace deep-level transient spectroscopy (LDLTS) and thermal admittance spectroscopy (TAS) have been used to determine the effect of boron (B) concentration on the electronic states in polycrystalline chemical vapour deposition diamond thin films grown on silicon by the hot filament method. A combination of high-resolution LDLTS and direct-capture cross-sectional measurements was used to investigate whether the deep electronic states present in the layers originated from point or extended defects. There was good agreement between data on deep electronic levels obtained from DLTS and TAS experiments. Two hole traps, E1 (0.29 eV) and E2 (0.53 eV), were found in a film with a boron content of 1 × 10 19 cm −3 . Both these levels and an additional level, E3 (0.35 eV), were found when the B content was increased to 4 × 10 19 cm −3 . Direct capture cross-sectional measurements of levels E1 and E2 show an unusual dependence on the fill-pulse duration which is interpreted as possibly indicating that the levels are part of an extended defect. The E3 level found in the more highly doped film consisted of two closely spaced levels, both of which show point-like defect characteristics. The E1 level may be due to B-related extended defects within the grain boundaries, whereas the ionization energy of the E2 level is in agreement with literature values from ab initio calculations for B–H complexes. We suggest that the E3 level is due to isolated B-related centres in bulk diamond. (paper)

  13. Electronic and magnetic properties of SnS2 monolayer doped with 4d transition metals

    Science.gov (United States)

    Xiao, Wen-Zhi; Xiao, Gang; Rong, Qing-Yan; Chen, Qiao; Wang, Ling-Ling

    2017-09-01

    We investigate the electronic structures and magnetic properties of SnS2 monolayers substitutionally doped with 4-d transition-metal through systematic first principles calculations. The doped complexes exhibit interesting electronic and magnetic behaviors, depending on the interplay between crystal field splitting, Hund's rule, and 4d levels. The system doped with Y is nonmagnetic metal. Both the Zr- and Pd-doped systems remain nonmagnetic semiconductors. Doping results in half-metallic states for Nb-, Ru-, Rh-, Ag, and Cd doped cases, and magnetic semiconductors for systems with Mo and Tc dopants. In particular, the Nb- and Mo-doped systems display long-ranged ferromagnetic ordering with Curie temperature above room temperature, which are primarily attributable to the double-exchange mechanism, and the p-d/p-p hybridizations, respectively. Moreover, The Mo-doped system has excellent energetic stability and flexible mechanical stability, and also possesses remarkable dynamic and thermal (500 K) stability. Our studies demonstrate that Nb- and Mo-doped SnS2 monolayers are promising candidates for preparing 2D diluted magnetic semiconductors, and hence will be a helpful clue for experimentalists.

  14. Electronic and magnetic properties of nonmetal atoms doped blue phosphorene: First-principles study

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, Huiling; Yang, Hui [Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), Department of Physics, Jilin University, Changchun 130012 (China); Wang, Hongxia [College of Mathematics, Physics and Information Science, Zhejiang Ocean University, Zhoushan 316000 (China); Du, Xiaobo [Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), Department of Physics, Jilin University, Changchun 130012 (China); Yan, Yu, E-mail: yanyu@jlu.edu.cn [Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), Department of Physics, Jilin University, Changchun 130012 (China)

    2016-06-15

    Using first-principles calculations, we study the geometrical structure, electronic structure and magnetic properties of substitutionally doped blue phosphorene with a series of nonmetallic atoms, including F, Cl, B, N, C, Si and O. The calculated formation energies and molecular dynamics simulations indicate that F, Cl, B, N, C, Si and O doped blue phosphorene are stable. Moreover, the substitutional doping of F, Cl, B and N cannot induce the magnetism in blue phosphorene due to the saturation or pairing of the valence electron of dopant and its neighboring P atoms. In contrast, ground states of C, Si and O doped blue phosphorene are spin-polarized and the magnetic moments induced by a doping atom are all 1.0 μ{sub B}, which is attributed to the appearance of an unpaired valence electron of C and Si and the formation of a nonbonding 3p electron of a neighboring P atom around O. Furthermore, the magnetic coupling between the moments induced by two C, Si and O are found to be long-range anti-ferromagnetic and the origin of the coupling can be attributed to the p–p hybridization interaction involving polarized electrons. - Highlights: • F, Cl, B, N, C, Si and O doped blue phosphorene are stable. • Substitutional doping of C, Si and O can produce the magnetism in blue phosphorene. • Magnetic coupling between two C, Si and O is long-range anti-ferromagnetic.

  15. Impact of potassium doping on the electronic structure of tetracene and pentacene: An electron energy-loss study

    Energy Technology Data Exchange (ETDEWEB)

    Roth, Friedrich, E-mail: Friedrich.Roth@cfel.de [Center for Free-Electron Laser Science / DESY, Notkestraße 85, D-22607 Hamburg (Germany); Knupfer, Martin, E-mail: M.Knupfer@ifw-dresden.de [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany)

    2015-10-21

    We report the doping induced changes of the electronic structure of tetracene and pentacene probed by electron energy-loss spectroscopy in transmission. A comparison between the dynamic response of undoped and potassium-intercalated tetracene and pentacene emphasizes the appearance of a new excitation feature in the former gap upon potassium addition. Interestingly, the momentum dependency of this new excitation shows a negative dispersion. Moreover, the analysis of the C 1s and K 2p core-level excitation results in a significantly lower doping level compared to potassium doped picene, a recently discovered superconductor. Therefore, the present electronic structure investigations open a new pathway to better understand the exceptional differences between acenes and phenacene and their divergent behavior upon alkali doping.

  16. Thermoelectric performance of electron and hole doped PtSb2

    KAUST Repository

    Saeed, Yasir; Singh, Nirpendra; Parker, D.; Schwingenschlö gl, Udo

    2013-01-01

    We investigate the thermoelectric properties of electron and hole doped PtSb2. Our results show that for doping of 0.04 holes per unit cell ( 1.5×1020 cm−3 ) PtSb2 shows a high Seebeck coefficient at room temperature, which can also be achieved at other temperatures by controlling the carrier concentration (both electron and hole). The electrical conductivity becomes temperature independent when the doping exceeds some 0.2 electrons/holes per unit cell. The figure of merit at 800 K in electron and hole doped PtSb2 is comparatively low at 0.13 and 0.21, respectively, but may increase significantly with As alloying due to the likely opening of a band gap and reduction of the lattice thermal conductivity.

  17. Doping-controlled Coherent Electron-Phonon Coupling in Vanadium Dioxide

    Energy Technology Data Exchange (ETDEWEB)

    Appavoo, Kannatassen [Vanderbilt Univ., Nashville, TN (United States) Interdisciplinary Materials Science; Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials; Wang, Bin [Vanderbilt Univ., Nashville, TN (United States) Dept. of Physics and Astronomy; Nag, Joyeeta [Vanderbilt Univ., Nashville, TN (United States) Dept. of Physics and Astronomy; Sfeir, Matthew Y. [Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials; Pantelides, Sokrates T. [Vanderbilt Univ., Nashville, TN (United States) Dept. of Physics and Astronomy; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Vanderbilt Univ., Nashville, TN (United States). Dept. of Electrical Engineering and Computer Science; Haglund, Richard F. [Vanderbilt Univ., Nashville, TN (United States) Interdisciplinary Materials Science and Dept. of Physics and Astronomy

    2015-05-10

    Broadband femtosecond transient spectroscopy and density functional calculations reveal that substitutional tungsten doping of a VO2 film changes the coherent phonon response compared to the undoped film due to altered electronic and structural dynamics.

  18. Thermoelectric performance of electron and hole doped PtSb2

    KAUST Repository

    Saeed, Yasir

    2013-04-30

    We investigate the thermoelectric properties of electron and hole doped PtSb2. Our results show that for doping of 0.04 holes per unit cell ( 1.5×1020 cm−3 ) PtSb2 shows a high Seebeck coefficient at room temperature, which can also be achieved at other temperatures by controlling the carrier concentration (both electron and hole). The electrical conductivity becomes temperature independent when the doping exceeds some 0.2 electrons/holes per unit cell. The figure of merit at 800 K in electron and hole doped PtSb2 is comparatively low at 0.13 and 0.21, respectively, but may increase significantly with As alloying due to the likely opening of a band gap and reduction of the lattice thermal conductivity.

  19. Holistic electronic response underlying the development of magnetism in co-doped diluted magnetic semiconductors

    Science.gov (United States)

    Andriotis, Antonis N.; Menon, Madhu

    2018-05-01

    A systematic analysis of the properties of codoped diluted magnetic semiconductors (DMSs) reveals the role and the effect of the codopants in dictating the magnetic features of the DMSs. Our results indicate that the magnetic features of a codoped DMS is the outcome of synergistic electronic processes of the whole system rather than a local hybridization process isolated from the rest of the system. Specifically, the d-orbital hybridization of the (co)dopants and the introduction of their impurity bands lead to the readjustment of the position of the p-band center of the host’s anions and that of the valence band maximum (VBM). The overall effect of these is to pull the hybridized d-bands of the (co)dopants relative to the Fermi energy, E F , which in turn dictate the value of the magnetic moment of both the dopant as well as the codopant. More precisely, the magnetic moment of a dopant shows an almost linearly increasing (decreasing) variation as the dopant’s d-band center (the latter dictated by the codopant) moves away from (gets closer to) E F . Our results thus suggest a completely new approach in the investigation and understanding of the origin of the defect induced magnetism and support previous reports suggesting the Fermi-energy engineering as a mean for developing high T C DMSs. These trends are demonstrated with results obtained for GaN, GaP, and CdS doped with one of the V, Mn, Co and Cu dopants and codoped with the transition metals of the 3d-series.

  20. Hybridized electronic states in potassium-doped picene probed by soft x-ray spectroscopies

    Directory of Open Access Journals (Sweden)

    Hiroyuki Yamane

    2012-12-01

    Full Text Available The electronic structure of the unoccupied and occupied states of potassium (K-doped and undoped picene crystalline films has been investigated by using the element-selective and bulk-sensitive photon-detection methods of X-ray absorption and emission spectroscopies. We observed the formation of the doping-induced unoccupied and occupied electronic states in K-doped picene. By applying the inner-shell resonant-excitation experiments, we observed the evidence for the orbital hybridization between K and picene near the Fermi energy. Furthermore, the resonant X-ray emission experiment suggests the presence of the Raman-active vibronic interaction in K-doped picene. These experimental evidences play a crucial role in the superconductivity of K-doped picene.

  1. Electron irradiation response on Ge and Al-doped SiO{sub 2} optical fibres

    Energy Technology Data Exchange (ETDEWEB)

    Yaakob, N.H.; Wagiran, H. [Department of Physics, Universiti Teknologi Malaysia, 81310 Skudai, Johor Darul Takzim (Malaysia); Hossain, I., E-mail: imamhossain@utm.m [Department of Physics, Universiti Teknologi Malaysia, 81310 Skudai, Johor Darul Takzim (Malaysia); Ramli, A.T. [Department of Physics, Universiti Teknologi Malaysia, 81310 Skudai, Johor Darul Takzim (Malaysia); Bradley, D.A [Department of Physics, University of Surrey, Guildford GU2 7XH (United Kingdom); Hashim, S. [Department of Physics, Universiti Teknologi Malaysia, 81310 Skudai, Johor Darul Takzim (Malaysia); Ali, H. [Department of Radiotherapy and Oncology, Hospital Sultan Ismail, Johor Darul Takzim (Malaysia)

    2011-05-01

    This paper describes the thermoluminescence response, sensitivity, stability and reproducibility of SiO{sub 2} optical fibres with various electron energies and doses. The TL materials that comprise Al- and Ge-doped silica fibres were used in this experiment. The TL results are compared with those of the commercially available TLD-100. The doped SiO{sub 2} optical fibres and TLD-100 are placed in a solid phantom and irradiated with 6, 9 and 12 MeV electron beams at doses ranging from 0.2 to 4.0 Gy using the LINAC at Hospital Sultan Ismail, Johor Bahru, Malaysia. It was found that the commercially available Al- and Ge-doped optical fibres have a linear dose-TL signal relationship. The intensity of TL response of Ge-doped fibre is markedly greater than that of the Al-doped fibre.

  2. Electron irradiation response on Ge and Al-doped SiO 2 optical fibres

    Science.gov (United States)

    Yaakob, N. H.; Wagiran, H.; Hossain, I.; Ramli, A. T.; Bradley, D. A.; Hashim, S.; Ali, H.

    2011-05-01

    This paper describes the thermoluminescence response, sensitivity, stability and reproducibility of SiO 2 optical fibres with various electron energies and doses. The TL materials that comprise Al- and Ge-doped silica fibres were used in this experiment. The TL results are compared with those of the commercially available TLD-100. The doped SiO 2 optical fibres and TLD-100 are placed in a solid phantom and irradiated with 6, 9 and 12 MeV electron beams at doses ranging from 0.2 to 4.0 Gy using the LINAC at Hospital Sultan Ismail, Johor Bahru, Malaysia. It was found that the commercially available Al- and Ge-doped optical fibres have a linear dose-TL signal relationship. The intensity of TL response of Ge-doped fibre is markedly greater than that of the Al-doped fibre.

  3. Electron irradiation response on Ge and Al-doped SiO2 optical fibres

    International Nuclear Information System (INIS)

    Yaakob, N.H.; Wagiran, H.; Hossain, I.; Ramli, A.T.; Bradley, D.A; Hashim, S.; Ali, H.

    2011-01-01

    This paper describes the thermoluminescence response, sensitivity, stability and reproducibility of SiO 2 optical fibres with various electron energies and doses. The TL materials that comprise Al- and Ge-doped silica fibres were used in this experiment. The TL results are compared with those of the commercially available TLD-100. The doped SiO 2 optical fibres and TLD-100 are placed in a solid phantom and irradiated with 6, 9 and 12 MeV electron beams at doses ranging from 0.2 to 4.0 Gy using the LINAC at Hospital Sultan Ismail, Johor Bahru, Malaysia. It was found that the commercially available Al- and Ge-doped optical fibres have a linear dose-TL signal relationship. The intensity of TL response of Ge-doped fibre is markedly greater than that of the Al-doped fibre.

  4. Electron magnetic resonance of gadolinium-doped calcium fluoride

    Energy Technology Data Exchange (ETDEWEB)

    Biasi, R.S. de, E-mail: rsbiasi@ime.eb.br [Secao de Engenharia Mecanica e de Materiais, Instituto Militar de Engenharia, 22290-270 Rio de Janeiro, RJ (Brazil); Grillo, M.L.N., E-mail: mluciag@uerj.br [Instituto de Fisica, Universidade do Estado do Rio de Janeiro, 20550-013 Rio de Janeiro, RJ (Brazil)

    2012-06-15

    Electron magnetic resonance (EMR) spectra of gadolinium-doped calcium fluoride have been studied at room temperature for Gd concentrations between 0.01 and 2.00 mol%. Gd{sup 3+} ions in sites with two different symmetries were observed. One of the sites, with cubic symmetry, is unstable at room temperature and decays with a time constant of 2.2 day{sup -1}. The other site, with tetragonal symmetry, is stable and is attributed to Gd{sup 3+} ions in substitutional sites next to a charge-compensating F{sup -} interstitial ion. The linewidth and intensity of the EMR spectrum with tetragonal symmetry increase with increasing Gd concentration. A theoretical calculation based on the concentration dependence of the EMR linewidth yields an effective range of the exchange interaction between Gd{sup 3+} ions in CaF{sub 2} of 0.774 nm, of the same order as that of Gd{sup 3+} ions in other cubic ionic compounds.

  5. Theoretical investigation of electronic, magnetic and optical properties of ZnSe doped TM and co-doped with MnTM (TM: Fe, Cr, Co): AB-initio study

    Energy Technology Data Exchange (ETDEWEB)

    Behloul, M. [LMPHE (URAC 12), Departement of Physique, B.P. 1014, Faculty of Science, University Mohammed V, Rabat (Morocco); Salmani, E., E-mail: elmehdisalmani@gmail.com [LMPHE (URAC 12), Departement of Physique, B.P. 1014, Faculty of Science, University Mohammed V, Rabat (Morocco); Ez-Zahraouy, H. [LMPHE (URAC 12), Departement of Physique, B.P. 1014, Faculty of Science, University Mohammed V, Rabat (Morocco); Benyoussef, A. [LMPHE (URAC 12), Departement of Physique, B.P. 1014, Faculty of Science, University Mohammed V, Rabat (Morocco); The Institute for Nanomaterials and Nanotechnology, MAScIR (Moroccan Fondation for Advanced Science, Innovation and Research), Rabat (Morocco)

    2016-12-01

    Based upon the first principal spin density functional calculation, the electronic, magnetic and optical properties of ZnTMSe and ZnMnTMSe where TM=Fe, Cr, Co are studied using the Korringa-Kohn-Rostoker coherent potential approximation (KKR-CPA) method within the local density (LDA)and the self-interaction-corrected(SIC) approximation. The purpose of this study is to determine the effect of different type of dopant and concentration on ferromagnetic and half metallic behavior of ZnSe. Therefore the magnetic disorder local moment (DLM) and the ferromagnetic state are investigated for different concentrations of Mn, Fe, Cr and Co; also the advantages of co-doped ZnSe with TM elements, behavior at room temperature are discussed. The electronic structure and optical properties are studied employing the local density (LDA) and the self-interaction-corrected (SIC) approximation. Moreover, the X-ray spectra modeling are in good agreement with the electronic and magnetic properties results. - Highlights: • The magnetic properties of ZnSe codoped with MnY(Y: Fe, Cr, Co) has been investigated. • The half-metallic appears in ZnSe codoped with impurities at low concentration. • The advantages of codoped ZnSe with impurities at room temperature are discussed.

  6. Ga vacancy induced ferromagnetism enhancement and electronic structures of RE-doped GaN

    International Nuclear Information System (INIS)

    Zhong Guohua; Zhang Kang; He Fan; Ma Xuhang; Lu Lanlan; Liu Zhuang; Yang Chunlei

    2012-01-01

    Because of their possible applications in spintronic and optoelectronic devices, GaN dilute magnetic semiconductors (DMSs) doped by rare-earth (RE) elements have attracted much attention since the high Curie temperature was obtained in RE-doped GaN DMSs and a colossal magnetic moment was observed in the Gd-doped GaN thin film. We have systemically studied the GaN DMSs doped by RE elements (La, Ce-Yb) using the full-potential linearized augmented plane wave method within the framework of density functional theory and adding the considerations of the electronic correlation and the spin-orbital coupling effects. We have studied the electronic structures of DMSs, especially for the contribution from f electrons. The origin of magnetism, magnetic interaction and the possible mechanism of the colossal magnetic moment were explored. We found that, for materials containing f electrons, electronic correlation was usually strong and the spin-orbital coupling was sometimes crucial in determining the magnetic ground state. It was found that GaN doped by La was non-magnetic. GaN doped by Ce, Nd, Pm, Eu, Gd, Tb and Tm are stabilized at antiferromagnetic phase, while GaN doped by other RE elements show strong ferromagnetism which is suitable materials for spintronic devices. Moreover, we have identified that the observed large enhancement of magnetic moment in GaN is mainly caused by Ga vacancies (3.0μB per Ga vacancy), instead of the spin polarization by magnetic ions or originating from N vacancies. Various defects, such as substitutional Mg for Ga, O for N under the RE doping were found to bring a reduction of ferromagnetism. In addition, intermediate bands were observed in some systems of GaN:RE and GaN with intrinsic defects, which possibly opens the potential application of RE-doped semiconductors in the third generation high efficiency photovoltaic devices.

  7. The production and confinement of runaway electrons with impurity ''killer'' pellets in DIII-D

    International Nuclear Information System (INIS)

    Evans, T.E.; Taylor, P.L.; Whyte, D.G.

    1998-12-01

    Prompt runaway electron bursts, generated by rapidly cooling DIII-D plasmas with argon killer pellets, are used to test a recent knock-on avalanche theory describing the growth of multi-MeV runaway electron currents during disruptions in tokamaks. Runaway current amplitudes, observed during some but not all DIII-D current quenches, are consistent with growth rates predicted by the theory assuming a pre-current quench runaway electron density of approximately 10 15 m -3 . Argon killer pellet modeling yields runaway densities of between 10 15 --10 16 m -3 in these discharges. Although knock-on avalanching appears to agree rather well with the measurements, relatively small avalanche amplification factors combined with uncertainties in the spatial distribution of pellet mass and cooling rates make it difficult to unambiguously confirm the proposed theory with existing data

  8. Electronic Interactions of n-Doped Perylene Diimide Groups Appended to Polynorbornene Chains: Implications for Electron Transport in Organic Electronics.

    Science.gov (United States)

    Nguyen, Minh T; Biberdorf, Joshua D; Holliday, Bradley J; Jones, Richard A

    2017-11-01

    A polymer consisting of a polynorbornene backbone with perylene diimide (PDI) pendant groups on each monomeric unit is synthesized via ring opening metathesis polymerization. The PDI pendant groups along the polymer backbone, studied by UV-vis absorption, fluorescence emission, and electron paramagnetic resonance spectroscopy in addition to electrochemical methods, show evidence of molecular aggregation and corresponding electronic coupling with neighboring groups, which forms pathways for efficient electron transport from one group to another in a specific reduced form. When n-doped, the title polymer shows redox conductivity of 5.4 × 10 -3 S cm -1 , comparable with crystalline PDI materials, and is therefore a promising material for use in organic electronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Effect of impurity inhomogeneity of CdS and CdSe monocrystalline semiconductors on electron absorption of piezoactive ultrasonic waves

    International Nuclear Information System (INIS)

    Ketis, B.P.; Krivka, I.

    1986-01-01

    Relation of observed anomalies (deviations from predictions of theory for homogeneous piezosemiconductor) of electronic absorption coefficient (EAC) of volume, piezoactive acoustic waves (with 15 MHz frequency) in CdS and CdSe hexagonal crystals with electrical heterogeneity is shown experimentally. Results of electron microanalysis of CdS and CdSe piezosemiconductors confirmed their impurity heterogeneity are presented as well as data of investigations into high-frequency conduction and electronic absorption of ultrasonic waves pointing out to volume nature of impurity and electric heterogeneities of monocrystals investigated. Correlation between EAC anomalies and surface density of impurity aggregates (IA) is noted as well as coincidence of impurity and electrical heterogeneities in CdS and CdSe crystals. In CdS crystals the observed anisotropy of high-frequency conduction and volume radioactive ultrasonic waves EAC is attributed to high density and anisotropy of IA space distribution and shape. To explain EAC anomalies, a crystal is simulated with heterogeneous grid of resistances and condensators

  10. Enhanced electronic and magnetic properties by functionalization of monolayer GaS via substitutional doping and adsorption

    Science.gov (United States)

    Rahman, Altaf Ur; Rahman, Gul; Kratzer, Peter

    2018-05-01

    The structural, electronic, and magnetic properties of two-dimensional (2D) GaS are investigated using density functional theory (DFT). After confirming that the pristine 2D GaS is a non-magnetic, indirect band gap semiconductor, we consider N and F as substitutional dopants or adsorbed atoms. Except for N substituting for Ga (NGa), all considered cases are found to possess a magnetic moment. Fluorine, both in its atomic and molecular form, undergoes a highly exothermic reaction with GaS. Its site preference (FS or FGa) as substitutional dopant depends on Ga-rich or S-rich conditions. Both for FGa and F adsorption at the Ga site, a strong F–Ga bond is formed, resulting in broken bonds within the GaS monolayer. As a result, FGa induces p-type conductivity in GaS, whereas FS induces a dispersive, partly occupied impurity band about 0.5 e below the conduction band edge of GaS. Substitutional doping with N at both the S and the Ga site is exothermic when using N atoms, whereas only the more favourable site under the prevailing conditions can be accessed by the less reactive N2 molecules. While NGa induces a deep level occupied by one electron at 0.5 eV above the valence band, non-magnetic NS impurities in sufficiently high concentrations modify the band structure such that a direct transition between N-induced states becomes possible. This effect can be exploited to render monolayer GaS a direct-band gap semiconductor for optoelectronic applications. Moreover, functionalization by N or F adsorption on GaS leads to in-gap states with characteristic transition energies that can be used to tune light absorption and emission. These results suggest that GaS is a good candidate for design and construction of 2D optoelectronic and spintronics devices.

  11. Radiative losses and electron cooling rates for carbon and oxygen plasma impurities

    International Nuclear Information System (INIS)

    Marchand, R.; Bonnin, X.

    1992-01-01

    Radiative losses and electron cooling rates are calculated for carbon and oxygen ions under conditions relevant to fusion plasmas. Both rates are calculated with the most recent recommended atomic data. A modified coronal model which includes the effects of metastable states is described and used to calculate the rates. Comparisons with other approaches are also discussed. (author). 36 ref, figs

  12. Nonplasmonic Hot-Electron Photocurrents from Mn-Doped Quantum Dots in Photoelectrochemical Cells.

    Science.gov (United States)

    Dong, Yitong; Rossi, Daniel; Parobek, David; Son, Dong Hee

    2016-03-03

    We report the measurement of the hot-electron current in a photoelectrochemical cell constructed from a glass/ITO/Al2 O3 (ITO=indium tin oxide) electrode coated with Mn-doped quantum dots, where hot electrons with a large excess kinetic energy were produced through upconversion of the excitons into hot electron hole pairs under photoexcitation at 3 eV. In our recent study (J. Am. Chem. Soc. 2015, 137, 5549), we demonstrated the generation of hot electrons in Mn-doped II-VI semiconductor quantum dots and their usefulness in photocatalytic H2 production reaction, taking advantage of the more efficient charge transfer of hot electrons compared with band-edge electrons. Here, we show that hot electrons produced in Mn-doped CdS/ZnS quantum dots possess sufficient kinetic energy to overcome the energy barrier from a 5.4-7.5 nm thick Al2 O3 layer producing a hot-electron current in photoelectrochemical cell. This work demonstrates the possibility of harvesting hot electrons not only at the interface of the doped quantum dot surface, but also far away from it, thus taking advantage of the capability of hot electrons for long-range electron transfer across a thick energy barrier. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Numerical simulation of runaway electrons: 3-D effects on synchrotron radiation and impurity-based runaway current dissipation

    Science.gov (United States)

    del-Castillo-Negrete, D.; Carbajal, L.; Spong, D.; Izzo, V.

    2018-05-01

    Numerical simulations of runaway electrons (REs) with a particular emphasis on orbit dependent effects in 3-D magnetic fields are presented. The simulations were performed using the recently developed Kinetic Orbit Runaway electron Code (KORC) that computes the full-orbit relativistic dynamics in prescribed electric and magnetic fields including radiation damping and collisions. The two main problems of interest are synchrotron radiation and impurity-based RE dissipation. Synchrotron radiation is studied in axisymmetric fields and in 3-D magnetic configurations exhibiting magnetic islands and stochasticity. For passing particles in axisymmetric fields, neglecting orbit effects might underestimate or overestimate the total radiation power depending on the direction of the radial shift of the drift orbits. For trapped particles, the spatial distribution of synchrotron radiation exhibits localized "hot" spots at the tips of the banana orbits. In general, the radiation power per particle for trapped particles is higher than the power emitted by passing particles. The spatial distribution of synchrotron radiation in stochastic magnetic fields, obtained using the MHD code NIMROD, is strongly influenced by the presence of magnetic islands. 3-D magnetic fields also introduce a toroidal dependence on the synchrotron spectra, and neglecting orbit effects underestimates the total radiation power. In the presence of magnetic islands, the radiation damping of trapped particles is larger than the radiation damping of passing particles. Results modeling synchrotron emission by RE in DIII-D quiescent plasmas are also presented. The computation uses EFIT reconstructed magnetic fields and RE energy distributions fitted to the experimental measurements. Qualitative agreement is observed between the numerical simulations and the experiments for simplified RE pitch angle distributions. However, it is noted that to achieve quantitative agreement, it is necessary to use pitch angle

  14. Calculation of the electronic and magnetic structures of 3d impurities in the Hcp Fe matrix

    International Nuclear Information System (INIS)

    Franca, Fernando

    1995-01-01

    In this work we investigate the local magnetic properties and the electronic structure of HCP Fe, as well introducing transition metals atoms 3d (Cs, Ti, Cr, Mn, Co, Ni, Cu, Zn) in HCP iron matrix. We employed the discrete variational method (DVM), which is an orbital molecular method which incorporate the Hartree-Fock-Slater theory and the linear combination of atomic orbitals (LCAO), in the self-consistent charge approximation and the local density approximation of Von Barth and Hedin to the exchange-correlation potential. We used the embedded cluster model to investigate the electronic structure and the local magnetic properties for the central atom of a cluster of 27 atoms immersed in the microcrystal representing the HCP Fe. (author)

  15. Influence of structural disorder on low-temperature behavior of penetration depth in electron-doped high-TC thin films

    International Nuclear Information System (INIS)

    Lanfredi, A.J.C.; Sergeenkov, S.; Araujo-Moreira, F.M.

    2006-01-01

    To probe the influence of structural disorder on low-temperature behavior of magnetic penetration depth, λ(T), in electron-doped high-T C superconductors, a comparative study of high-quality Pr 1.85 Ce 0.15 CuO 4 (PCCO) and Sm 1.85 Ce 0.15 CuO 4 (SCCO) thin films is presented. The λ(T) profiles are extracted from conductance-voltage data using a highly-sensitive home-made mutual-inductance technique. The obtained results confirm a d-wave pairing mechanism in both samples (with nodal gap parameter Δ 0 /k B T C =2.0 and 2.1 for PCCO and SCCO films, respectively), substantially modified by impurity scattering (which is more noticeable in less homogeneous SCCO films) at the lowest temperatures. More precisely, Δλ(T)=λ(T)-λ(0) is found to follow the Goldenfeld-Hirschfeld interpolation formulae Δλ(T)/λ(0)=AT 2 /(T+T 0 ) with T 0 =ln(2)k B Γ 1/2 Δ 0 1/2 being the crossover temperature which demarcates pure and impure scattering processes (T 0 /T C =0.13 and 0.26 for PCCO and SCCO films, respectively). The value of the extracted impurity scattering rate Γ correlates with the quality of our samples and is found to be much higher in less homogeneous films with lower T C

  16. The investigation of Ce doped ZnO crystal: The electronic, optical and magnetic properties

    Science.gov (United States)

    Wen, Jun-Qing; Zhang, Jian-Min; Qiu, Ze-Gang; Yang, Xu; Li, Zhi-Qin

    2018-04-01

    The electronic, optical and magnetic properties of Ce doped ZnO crystal have been studied by using first principles method. The research of formation energies show that Ce doped ZnO is energetically stable, and the formation energies reduce from 6.25% to 12.5% for Ce molar percentage. The energy band is still direct band gap after Ce doped, and band gap increases with the increase of Cesbnd Ce distance. The Fermi level moves upward into conduction band and the DOS moves to lower energy with the increase of Ce concentration, which showing the properties of n-type semiconductor. The calculated optical properties imply that Ce doped causes a red-shift of absorption peaks, and enhances the absorption of the visible light. The transition from ferromagnetic to antiferromagnetic has been found in Ce doped ZnO.

  17. Electron Tunneling in Junctions Doped with Semiconductors and Metals.

    Science.gov (United States)

    Bell, Lloyd Douglas, II

    In this study, tunnel junctions incorporating thin layers of semiconductors and metals have been analyzed. Inelastic electron tunneling spectroscopy (IETS) was employed to yield high-resolution vibrational spectra of surface species deposited at the oxide-M_2 interface of M_1-M_1O _{rm x}-M _2 tunneling samples. Analysis was also performed on the elastic component of the tunneling current, yielding information on the tunnel barrier shape. The samples in this research exhibit a wide range of behavior. The IETS for Si, SiO_2, and Ge doped samples show direct evidence of SiH _{rm x} and GeH_ {rm x} formation. The particular species formed is shown to depend on the form of the evaporated dopant. Samples were also made with organic dopants deposited over the evaporated dopants. Many such samples show marked effects of the evaporated dopants on the inelastic peak intensities of the organic dopants. These alterations are correlated with the changed reactivity of the oxide surface coupled with a change in the OH dipole layer density on the oxide. Thicker organic dopant layers cause large changes in the elastic tunneling barrier due to OH layer alterations or the low barrier attributes of the evaporated dopant. In the cases of the thicker layers an extra current-carrying mechanism is shown to be contributing. Electron ejection from charge traps is proposed as an explanation for this extra current. The trend of barrier shape with dopant thickness is examined. Many of these dopants also produce a voltage-induced shift in the barrier shape which is stable at low temperature but relaxes at high temperature. This effect is similar to that produced by certain organic dopants and is explained by metastable bond formation between the surface OH and dopant. Other dopants, such as Al, Mg, and Fe, produce different effects. These dopants cause large I-V nonlinearity at low voltages. This nonlinearity is modeled as a giant zero-bias anomaly (ZBA) and fits are presented which show good

  18. Theoretical study using electronic structure calculations of uranium and cerium dioxides containing defects and impurities

    International Nuclear Information System (INIS)

    Shi, Lei

    2016-01-01

    Uranium dioxide (UO_2) is the most widely used nuclear fuel in existing nuclear reactors around the world. While in service for energy supply, UO_2 is submitted to the neutron flux and undergoes nuclear fission chain reactions, which create large number of fission products and point defects. The study of the behavior of the fission products and point defects is important to understand the fuel properties under irradiation. We conduct electronic structure calculations based on the density functional theory (DFT) to model this radiation damage at the atomic scale. The DFT+U method is used to describe the strong correlation of the 4f electrons of cerium and 5f electrons of uranium in the materials studied (UO_2, CeO_2 and (U, Ce)O_2). (U, Ce)O_2 is studied because it is considered as a low radioactive model material of mixed actinide oxides such as the MOX fuel (U, Pu)O_2 used in light water reactors and fast neutron reactors. Cerium dioxide (CeO_2) is studied to provide reference data of (U, Ce)O_2. We perform a DFT+U study of point defects and gaseous fission products (Xe and Kr) in CeO_2 and compare our results to the existing ones of UO_2. We study the bulk properties as well as the behavior of defects for (U, Ce)O_2, and compare our results to the ones of (U, Pu)O_2. Furthermore, for the study of defects in UO_2, methodological improvements are explored considering the spin-orbit coupling effect and the finite-size effect of the simulation supercell. (author) [fr

  19. An Impurity Emission Survey in the near UV and Visible Spectral Ranges of Electron Cyclotron Heated (ECH) Plasma in the TJ-II Stellarator

    International Nuclear Information System (INIS)

    McCarthy, K. J.; Zurro, B.; Baciero, A.

    2001-01-01

    We report on a near-ultraviolet and visible spectroscopic survey (220-600 nm) of electron cyclotron resonance (ECR) heated plasmas created in the TJ-II stellarator, with central electron temperatures up to 2 keV and central electron densities up to 1.7 x 10 ''19 m''-3. Approximately 1200 lines from thirteen elements have been identified. The purpose of the work is to identify the principal impurities and spectral lines present in TJ-II plasmas, as well as their possible origin to search for transitions from highly ionised ions. This work will act as a base for identifying suitable transitions for following the evolution of impurities under different operating regimens and multiplet systems for line polarisation studies. It is intended to use the database creates as a spectral line reference for comparing spectra under different operating and plasma heating regimes. (Author)

  20. Er3+ impurities in KTiOPO4 studied by electron paramagnetic resonance

    International Nuclear Information System (INIS)

    Bravo, D; MartIn, A; Carvajal, J J; Aguilo, M; DIaz, F; Lopez, F J

    2006-01-01

    An electron paramagnetic resonance (EPR) study of Er 3+ ions in single crystals of KTiOPO 4 (KTP) is presented. The EPR spectra show the existence of eight different Er 3+ centres. The g-matrix has been determined for all eight centres from the analysis of the angular dependences of the spectrum in three planes of the crystal. This study provides strong evidence about incorporation of erbium in the low-symmetry K + sites of KTP. Possible reasons for the appearance of such a large number of Er 3+ centres are discussed

  1. Electric-field gradients at Ta impurities in Sc{sub 2}O{sub 3} semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Richard, Diego, E-mail: richard@fisica.unlp.edu.ar [Departamento de Fisica e Instituto de Fisica La Plata (IFLP, CONICET La Plata), Facultad de Ciencias Exactas, Universidad Nacional de La Plata, CC 67, 1900 La Plata, Argentina. (Argentina); Munoz, Emiliano L. [Departamento de Fisica e Instituto de Fisica La Plata (IFLP, CONICET La Plata), Facultad de Ciencias Exactas, Universidad Nacional de La Plata, CC 67, 1900 La Plata, Argentina. (Argentina); Errico, Leonardo A. [Departamento de Fisica e Instituto de Fisica La Plata (IFLP, CONICET La Plata), Facultad de Ciencias Exactas, Universidad Nacional de La Plata, CC 67, 1900 La Plata, Argentina. (Argentina); Universidad Nacional del Noroeste Bonaerense (UNNOBA), Monteagudo 2772, 2700 Pergamino, Argentina. (Argentina); Renteria, Mario [Departamento de Fisica e Instituto de Fisica La Plata (IFLP, CONICET La Plata), Facultad de Ciencias Exactas, Universidad Nacional de La Plata, CC 67, 1900 La Plata, Argentina. (Argentina)

    2012-08-15

    In this work we present an ab initio study of Ta-doped Sc{sub 2}O{sub 3} semiconductor. Calculations were performed at dilute Ta impurities located at both cationic sites of the host structure, using the Augmented Plane Wave plus Local Orbitals (APW+lo) method. The structural atomic relaxations and the electric-field gradients (EFG) were studied for different charge states of the cell in order to simulate different ionization states of the double-donor Ta impurity. From the results for the EFG tensor at Ta impurity sites and the comparison with experimental results obtained using the Time-Differential {gamma}-{gamma} Perturbed-Angular-Correlations technique we could determined the structural distortions induced by the Ta impurity and the electronic structure of the doped-semiconductor.

  2. Electronic structure of graphene nanoribbons doped with nitrogen atoms: a theoretical insight.

    Science.gov (United States)

    Torres, A E; Fomine, S

    2015-04-28

    The electronic structure of graphene nanoribbons doped with a graphitic type of nitrogen atoms has been studied using B3LYP, B2PLYP and CAS methods. In all but one case the restricted B3LYP solutions were unstable and the CAS calculations provided evidence for the multiconfigurational nature of the ground state with contributions from two dominant configurations. The relative stability of the doped nanoribbons depends mostly on the mutual position of the dopant atoms and notably less on the position of nitrogen atoms within the nanoribbon. N-graphitic doping affects cationic states much more than anionic ones due the participation of the nitrogen atoms in the stabilization of the positive charge, resulting in a drop in ionization energies (IPs) for N-graphitic doped systems. Nitrogen atoms do not participate in the negative charge stabilization of anionic species and, therefore, the doping does not affect the electron affinities (EAs). The unrestricted B3LYP method is the method of choice for the calculation of IPs and EAs. Restricted B3LYP and B2PLYP produces unreliable results for both IPs and EAs while CAS strongly underestimates the electron affinities. This is also true for the reorganization energies where restricted B3LYP produces qualitatively incorrect results. Doping changes the reorganization energy of the nanoribbons; the hole reorganization energy is generally higher than the corresponding electron reorganization energy due to the participation of nitrogen atoms in the stabilization of the positive charge.

  3. Theoretical investigation of electronic, magnetic and optical properties of Fe doped GaN thin films

    International Nuclear Information System (INIS)

    Salmani, E.; Mounkachi, O.; Ez-Zahraouy, H.; Benyoussef, A.; Hamedoun, M.; Hlil, E.K.

    2013-01-01

    Highlights: •Magnetic and optical properties Fe-doped GaN thin films are studied using DFT. •The band gaps of GaN thin films are larger than the one of the bulk. •The layer thickness and acceptor defect can switch the magnetic ordering. -- Abstract: Using first principles calculations based on spin-polarized density functional theory, the magnetic and optical properties of GaN and Fe-doped GaN thin films with and without acceptor defect is studied. The band structure calculations show that the band gaps of GaN thin films with 2, 4 and 6 layers are larger than the one of the bulk with wurtzite structure and decreases with increasing the film thickness. In Fe doped GaN thin films, we show that layer of thickness and acceptor defect can switch the magnetic ordering from disorder local moment (DLM) to ferromagnetic (FM) order. Without acceptor defect Fe doped GaN exhibits spin glass phase in 4 layers form and ferromagnetic state for 2 layers form of the thin films, while it exhibits ferromagnetic phase with acceptor defect such as vacancies defect for 2 and 4 layers. In the FM ordering, the thin films is half-metallic and is therefore ideal for spin application. The different energy between ferromagnetic state and disorder local moment state was evaluated. Moreover, the optical absorption spectra obtained by ab initio calculations confirm the ferromagnetic stability based on the charge state of magnetic impurities

  4. Structural, magnetic and electronic structure properties of Co doped ZnO nanoparticles

    International Nuclear Information System (INIS)

    Kumar, Shalendra; Song, T.K.; Gautam, Sanjeev; Chae, K.H.; Kim, S.S.; Jang, K.W.

    2015-01-01

    Highlights: • XRD and HR-TEM results show the single phase nature of Co doped ZnO nanoparticles. • XMCD and dc magnetization results indicate the RT-FM in Co doped ZnO nanoparticles. • Co L 3,2 NEXAFS spectra infer that Co ions are in 2+ valence state. • O K edge NEXAFS spectra show that O vacancy increases with Co doping in ZnO. - Abstract: We reported structural, magnetic and electronic structure studies of Co doped ZnO nanoparticles. Doping of Co ions in ZnO host matrix has been studied and confirmed using various methods; such as X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), energy dispersed X-ray (EDX), high resolution transmission electron microscopy (HR-TEM), Fourier transform infrared spectroscopy (FT-IR), near edge X-ray absorption fine structure (NEXAFS) spectroscopy, magnetic hysteresis loop measurements and X-ray magnetic circular dichroism (XMCD). From the XRD and HR-TEM results, it is observed that Co doped ZnO nanoparticles have single phase nature with wurtzite structure and exclude the possibility of secondary phase formation. FE-SEM and TEM micrographs show that pure and Co doped nanoparticles are nearly spherical in shape. O K edge NEXAFS spectra indicate that O vacancies increase with Co doping. The Co L 3,2 edge NEXAFS spectra revealed that Co ions are in 2+ valence state. DC magnetization hysteresis loops and XMCD results clearly showed the intrinsic origin of temperature ferromagnetism in Co doped ZnO nanoparticles

  5. Persistent current of relativistic electrons on a Dirac ring in presence of impurities

    KAUST Repository

    Ghosh, Sumit; Saha, Arijit

    2014-01-01

    We study the behaviour of persistent current of relativistic electrons on a one dimensional ring in presence of attractive/repulsive scattering potentials. In particular, we investigate the persistent current in accordance with the strength as well as the number of the scattering potential. We find that in presence of single scatterer the persistent current becomes smaller in magnitude than the scattering free scenario. This behaviour is similar to the non-relativistic case. Even for a very strong scattering potential, finite amount of persistent current remains for a relativistic ring. In presence of multiple scatterer we observe that the persistent current is maximum when the scatterers are placed uniformly compared to the current averaged over random configurations. However if we increase the number of scatterers, we find that the random averaged current increases with the number of scatterers. The latter behaviour is in contrast to the non-relativistic case. © 2014 EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg.

  6. Transition metal impurities in fluorides: Role of electronic structure of fluorine on spectroscopic properties

    DEFF Research Database (Denmark)

    Trueba, A.; Garcia-Fernandez, P.; García Lastra, Juan Maria

    2011-01-01

    This work examines the relation between optical properties of a MF6q− complex (M=transition–metal cation) and the chemical bonding paying especial attention to the role played by the electronic structure of fluorine. A main goal of the present study is to understand why if the effective Racah...... parameters, B and C, as well as the cubic splitting parameter, 10Dq, all depend on the covalency nevertheless the latter one is much more sensitive to a hydrostatic pressure than the former ones. The analysis carried out in this work, together with the results of ab initio calculations on CrF63− embedded...... detail. At the same time the reasons avoiding its measurement from optical spectra are pointed out as well. The present results stress that the microscopic origin of an optical parameter like 10Dq can certainly be very subtle....

  7. Persistent current of relativistic electrons on a Dirac ring in presence of impurities

    KAUST Repository

    Ghosh, Sumit

    2014-08-01

    We study the behaviour of persistent current of relativistic electrons on a one dimensional ring in presence of attractive/repulsive scattering potentials. In particular, we investigate the persistent current in accordance with the strength as well as the number of the scattering potential. We find that in presence of single scatterer the persistent current becomes smaller in magnitude than the scattering free scenario. This behaviour is similar to the non-relativistic case. Even for a very strong scattering potential, finite amount of persistent current remains for a relativistic ring. In presence of multiple scatterer we observe that the persistent current is maximum when the scatterers are placed uniformly compared to the current averaged over random configurations. However if we increase the number of scatterers, we find that the random averaged current increases with the number of scatterers. The latter behaviour is in contrast to the non-relativistic case. © 2014 EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg.

  8. Impurity band Mott insulators: a new route to high Tc superconductivity

    Directory of Open Access Journals (Sweden)

    Ganapathy Baskaran

    2008-01-01

    Full Text Available Last century witnessed the birth of semiconductor electronics and nanotechnology. The physics behind these revolutionary developments is certain quantum mechanical behaviour of 'impurity state electrons' in crystalline 'band insulators', such as Si, Ge, GaAs and GaN, arising from intentionally added (doped impurities. The present article proposes that certain collective quantum behaviour of these impurity state electrons, arising from Coulomb repulsions, could lead to superconductivity in a parent band insulator, in a way not suspected before. Impurity band resonating valence bond theory of superconductivity in boron doped diamond, recently proposed by us, suggests possibility of superconductivity emerging from impurity band Mott insulators. We use certain key ideas and insights from the field of high-temperature superconductivity in cuprates and organics. Our suggestion also offers new possibilities in the field of semiconductor electronics and nanotechnology. The current level of sophistication in solid state technology and combinatorial materials science is very well capable of realizing our proposal and discover new superconductors.

  9. Tuning electronic properties of In2O3 nanowires by doping control

    International Nuclear Information System (INIS)

    Lei, B.; Li, C.; Zhang, D.; Tang, D.; Zhou, C.

    2004-01-01

    We present two effective routes to tune the electronic properties of single-crystalline In 2 O 3 nanowires by controlling the doping. The first method involves using different O 2 concentrations during the synthesis. Lightly (heavily) doped nanowires were produced by using high (low) O 2 concentrations, respectively, as revealed by the conductances and threshold voltages of nanowire-based field-effect transistors. Our second method exploits post-synthesis baking, as baking heavily doped nanowires in ambient air led to suppressed conduction and a positive shift of the threshold voltage, whereas baking lightly doped nanowires in vacuum displayed the opposite behavior. Our approaches offer viable ways to tune the electronic properties of many nonstoichiometric metal oxide systems such as In 2 O 3 , SnO 2 , and ZnO nanowires for various applications

  10. First Principles Study of Electronic and Magnetic Properties of Co-Doped Armchair Graphene Nanoribbons

    Directory of Open Access Journals (Sweden)

    Biao Li

    2015-01-01

    Full Text Available Using the first principles calculations, we have studied the atomic and electronic structures of single Co atom incorporated with divacancy in armchair graphene nanoribbon (AGNR. Our calculated results show that the Co atom embedded in AGNR gives rise to significant impacts on the band structures and the FM spin configuration is the ground state. The presence of the Co doping could introduce magnetic properties. The calculated results revealed the arising of spin gapless semiconductor characteristics with doping near the edge in both ferromagnetic (FM and antiferromagnetic (AFM magnetic configurations, suggesting the robustness for potential application of spintronics. Moreover, the electronic structures of the Co-doped AGNRs are strongly dependent on the doping sites and the edge configurations.

  11. Electronic structure, magnetic and structural properties of Ni doped ZnO nanoparticles

    International Nuclear Information System (INIS)

    Kumar, Shalendra; Vats, Prashant; Gautam, S.; Gupta, V.P.; Verma, K.D.; Chae, K.H.; Hashim, Mohd; Choi, H.K.

    2014-01-01

    Highlights: • XRD, and HR-TEM results show the single phase nature of Ni doped ZnO nanoparticles. • dc magnetization results indicate the RT-FM in Ni doped ZnO nanoparticles. • Ni L 3,2 edge NEXAFS spectra infer that Ni ions are in +2 valence state. • O K edge NEXAFS spectra show that O vacancy increases with Ni doping in ZnO. - Abstract: We report structural, magnetic and electronic structural properties of Ni doped ZnO nanoparticles prepared by auto-combustion method. The prepared nanoparticles were characterized by using X-ray diffraction (XRD), high resolution transmission electron microscopy (HR-TEM), near edge X-ray absorption fine structure (NEXAFS) spectroscopy, and dc magnetization measurements. The XRD and HR-TEM results indicate that Ni doped ZnO nanoparticles have single phase nature with wurtzite lattice and exclude the presence of secondary phase. NEXAFS measurements performed at Ni L 3,2 -edges indicates that Ni ions are in +2 valence state and exclude the presence of Ni metal clusters. O K-edge NEXAFS spectra indicate an increase in oxygen vacancies with Ni-doping, while Zn L 3,2 -edge show the absence of Zn-vacancies. The magnetization measurements performed at room temperature shows that pure and Ni doped ZnO exhibits ferromagnetic behavior

  12. Electronic correlations in hole- and electron-doped Fe-based superconductors

    Science.gov (United States)

    Hardy, Frederic; Boehmer, Anna; Schweiss, Peter; Wolf, Thomas; Heid, Rolf; Eder, Robert; Fisher, Robert A.; Meingast, Christoph

    2015-03-01

    High-temperature superconductivity in the cuprates occurs at the crossover from a highly-correlated Mott insulating state to a weaker correlated Fermi liquid as a function of hole doping. The iron pnictides were initially thought to be fairly weakly correlated. However, we have recently shown using transport and thermodynamic measurements that KFe2As2 is strongly correlated. Both the Sommerfeld coefficient and the Pauli susceptibility are strongly enhanced with respect to their bare DFT values. These correlations are even further enhanced in RbFe2As2andCsFe2As2. The temperature dependence of both the susceptibility and the thermal expansion provides strong experimental evidence for the existence of a coherence-incoherence crossover; similar to what is found in heavy-fermion compounds. Whereas the correlations in the cuprates result from a large value of the Hubbard U, recent works have stressed the particular relevance of Hund's coupling in the pnictides. Our data may be interpreted in terms of a close proximity of KFe2As2 to an orbital-selective Mott transition. We now have good thermodynamic data covering both the hole and electron sides of the BaFe2As2 system and we will discuss how these correlations are modified by doping.

  13. Al-doped MgB_2 materials studied using electron paramagnetic resonance and Raman spectroscopy

    International Nuclear Information System (INIS)

    Bateni, Ali; Somer, Mehmet; Erdem, Emre; Repp, Sergej; Weber, Stefan

    2016-01-01

    Undoped and aluminum (Al) doped magnesium diboride (MgB_2) samples were synthesized using a high-temperature solid-state synthesis method. The microscopic defect structures of Al-doped MgB_2 samples were systematically investigated using X-ray powder diffraction, Raman spectroscopy, and electron paramagnetic resonance. It was found that Mg-vacancies are responsible for defect-induced peculiarities in MgB_2. Above a certain level of Al doping, enhanced conductive properties of MgB_2 disappear due to filling of vacancies or trapping of Al in Mg-related vacancy sites.

  14. Carbon nanotube conditioning: ab initio simulations of the effect of defects and doping on the electronic properties of carbon nanotube systems.

    Science.gov (United States)

    Soto, Matias; Barrera, Enrique

    Using carbon nanotubes for electrical conduction applications at the macroscale has proven to be a difficult task, mainly, due to defects and impurities present, and lack of uniform electronic properties in synthesized carbon nanotube bundles. Some researchers have suggested that growing only metallic armchair nanotubes and arranging them with an ideal contact length could lead to the ultimate electrical conductivity; however, such recipe presents too high of a cost to pay. A different route and the topic of this work is to learn to manage the defects, impurities, and the electronic properties of carbon nanotubes present, so that the electrical conduction of a bundle or even wire may be enhanced. We used density functional theory calculations to study the effect of defects and doping on the electronic structure of metallic, semi-metal and semiconducting carbon nanotubes in order to gain a clear picture of their properties. Additionally, using dopants to increase the conductance across a junction between two carbon nanotubes was studied for different configurations. Finally, interaction potentials obtained via first-principles calculations were generalized by developing mathematical models for the purpose of running simulations at a larger length scale using molecular dynamics. Partial funding was received from CONACyT Scholarship 314419.

  15. Electron spin resonance studies of iron-group impurities in beryllium fluoride glasses

    Energy Technology Data Exchange (ETDEWEB)

    Griscom, D L; Stapelbroek, M [Naval Research Lab., Washington, DC (USA); Weber, M J [California Univ., Livermore (USA). Lawrence Livermore National Lab.

    1980-11-01

    Electron spin resonance investigations have been carried out on unirradiated BeF/sub 2/ glasses. Two relatively intense resonances were observed in a water-free distilled glass known to contain 49 ppM Ni, 13 ppM Mn, and < 20 ppM Fe. One of these was the paramagnetic resonance spectrum of Mn/sup 2 +/. Analysis of the observed /sup 19/F superhyperfine structure demonstrated this manganese to occupy distorted octahedral sites in the glass network. The second resonance was shown by temperature and frequency dependence studies, coupled with computer line shape analysis, to be a ferromagnetic resonance signal due to precipitated ferrite phases. The data suggest that these ferrites are somewhat heterogeneous and most likely comprize magnetite-like phases similar to NiFe/sub 2/O/sub 4/. An optical extinction curve rising into the ultraviolet with an approximate lambda/sup -4/ dependence is tentatively ascribed to light scattering by ferrite particles approximately 1000 Angstroems in diameter.

  16. Transport anomalies and quantum criticality in electron-doped cuprate superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Xu; Yu, Heshan; He, Ge; Hu, Wei; Yuan, Jie; Zhu, Beiyi [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Jin, Kui, E-mail: kuijin@iphy.ac.cn [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100190 (China)

    2016-06-15

    Highlights: • Electrical transport and its complementary thermal transport on electron-doped cuprates are reviewed. • The common features of electron-doped cuprates are sorted out and shown in the last figure. • The complex superconducting fluctuations and quantum fluctuations are distinguished. - Abstract: Superconductivity research is like running a marathon. Three decades after the discovery of high-T{sub c} cuprates, there have been mass data generated from transport measurements, which bring fruitful information. In this review, we give a brief summary of the intriguing phenomena reported in electron-doped cuprates from the aspect of electrical transport as well as the complementary thermal transport. We attempt to sort out common features of the electron-doped family, e.g. the strange metal, negative magnetoresistance, multiple sign reversals of Hall in mixed state, abnormal Nernst signal, complex quantum criticality. Most of them have been challenging the existing theories, nevertheless, a unified diagram certainly helps to approach the nature of electron-doped cuprates.

  17. Interlayer magnetotransport study in electron-doped Sm2 ...

    Indian Academy of Sciences (India)

    On cooling, the -axis resistivity ρc of the mesa structures reveals a semiconductive upturn above c, followed by a sharp superconducting transition at 20 K. When the magnetic field is applied along the -axis, ρc() shows a parallel shift without significant broadening, as also observed in the hole-doped underdoped ...

  18. Electron-beam-induced current study of hydrogen passivation on grain boundaries in multicrystalline silicon: Influence of GB character and impurity contamination

    International Nuclear Information System (INIS)

    Chen Jun; Yang Deren; Xi Zhenqiang; Sekiguchi, Takashi

    2005-01-01

    The impacts of grain boundary (GB) character and impurity contamination level on the hydrogen passivation of GBs in multicrystalline silicon (mc-Si) were studied by means of an electron-beam-induced current (EBIC) technique. In mc-Si with a low contamination of Fe, the 300K EBIC contrast of all kinds of GBs in the H-passivated state was weak and similar to that in the as-grown state. The 100K EBIC contrast of Σ (Σ=3, 9, and 27) GBs decreased about 75-80%, whereas that of random and small-angle GBs decreased about 35-40%. Due to the different impurity gettering ability of different GBs, the variation in 100K EBIC contrast has suggested that the effect of H-passivation depends on both the GB character and impurity contamination level. In the mc-Si with heavy contamination of Fe, at both 300 and 100K, the EBIC contrast of both Σ (Σ=3) and random GBs decreased but the ratio was <40%, suggesting that the H-passivation is mainly affected by the impurity contamination level. on

  19. Phase engineering of monolayer transition-metal dichalcogenide through coupled electron doping and lattice deformation

    International Nuclear Information System (INIS)

    Ouyang, Bin; Lan, Guoqiang; Song, Jun; Guo, Yinsheng; Mi, Zetian

    2015-01-01

    First-principles calculations were performed to investigate the phase stability and transition within four monolayer transition-metal dichalcogenide (TMD) systems, i.e., MX 2 (M = Mo or W and X = S or Se) under coupled electron doping and lattice deformation. With the lattice distortion and electron doping density treated as state variables, the energy surfaces of different phases were computed, and the diagrams of energetically preferred phases were constructed. These diagrams assess the competition between different phases and predict conditions of phase transitions for the TMDs considered. The interplay between lattice deformation and electron doping was identified as originating from the deformation induced band shifting and band bending. Based on our findings, a potential design strategy combining an efficient electrolytic gating and a lattice straining to achieve controllable phase engineering in TMD monolayers was demonstrated

  20. Far infrared spectroscopy of solids. I. Impurity states in Al2O3. II. Electron-hole droplets in Ge

    International Nuclear Information System (INIS)

    Aurbauch, R.L.

    1975-01-01

    Far infrared Fourier transform spectroscopy was used to study the low lying vibronic states of Mn 3+ in Al 2 O 3 and the plasma absorption of electron-hole droplets in Ge. The transmission of Mn-doped samples of Al 2 O 3 was measured in the frequency range from 3 to 30 cm -1 in applied magnetic fields up to 50 kG. Absorption lines were observed due to both ground and excited state transitions. Polarization measurements established that these absorption lines were due to electric dipole transitions. Temperature dependence measurements were used to derive a level diagram for the low lying states of Mn 3+ . A phenomenological model based on an electronic Hamiltonian was developed which successfully describes the data. The empirically determined trigonal field and spin-orbit quenching parameters of this model are 0.7 and 0.1 respectively. This quenching is attributed to the dynamic Jahn--Teller interaction. The plasma absorption of small (α) electron-hole drops in Ge was measured in the frequency range from 30 to 300 cm -1 . The observed absorption is in good agreement with measurements by Vavilov and other workers. A theoretical model which includes both intraband and interband contributions to the dielectric constant in the Rayleigh limit of Mie theory is used to describe the observed lineshape. Measurements of plasma absorption of large (γ) drops in inhomogeneously stressed Ge were made in magnetic fields up to 50 kG. The lineshape at zero applied field was calculated in the large sphere limit of Mie theory including intraband terms and a zero-strain interband term. Qualitative agreement with experiment was obtained. The peak absorption shifted quadratically with applied magnetic field and the total plasma absorption increased. No oscillatory structure was observed in the field-dependence of the total absorption

  1. A computational study on the electronic and field emission properties of Mg and Si doped AlN nanocones

    Science.gov (United States)

    Saedi, Leila; Soleymanabadi, Hamed; Panahyab, Ataollah

    2018-05-01

    Following an experimental work, we explored the effect of replacing an Al atom of an AlN nanocone by Si or Mg atom on its electronic and field emission properties using density functional theory calculations. We found that both Si-doping and Mg-doping increase the electrical conductivity of AlN nanocone, but their influences on the filed emission properties are significantly different. The Si-doping increases the electron concentration of AlN nanocone and results in a large electron mobility and a low work function, whereas Mg-doping leads to a high hole concentration below the conduction level and increases the work function in agreement with the experimental results. It is predicted that Si-doped AlN nanocones show excellent filed emission performance with higher emitted electron current density compared to the pristine AlN nanocone. But the Mg-doping meaningfully decreases the emitted electron current density from the surface of AlN nanocone. The Mg-doping can increase the work function about 41.9% and the Si-doping can decrease it about 6.3%. The Mg-doping and Si-doping convert the AlN nanocone to a p-type and n-type semiconductors, respectively. Our results explain in a molecular level what observed in the experiment.

  2. Ab initio study of the EFG tensor at Cd impurities in Sc2O3 semiconductor

    International Nuclear Information System (INIS)

    Munoz, E.L.; Richard, D.; Errico, L.A.; Renteria, M.

    2009-01-01

    We present an ab initio study of diluted Cd impurities localized at both cation sites of the semiconductor Sc 2 O 3 . The electric-field-gradient (EFG) tensor at Cd impurities located at both cationic sites of the host structure was determined from the calculation of the electronic structure of the doped system. Calculations were performed with the full-potential augmented-plane wave plus local orbitals (APW+lo) method within the framework of the density functional theory. We studied the atomic structural relaxations and the perturbation of the electronic charge density induced by the impurities in the host system in a fully self-consistent way. We showed that the Cd impurity introduces an increase of 8% in the nearest oxygen neighbors bond-lengths, changing the EFG sign for probes located at the asymmetric cation site. The APW+lo predictions for the charged state of the Cd impurity were compared with EFG results existent in the literature, coming from time-differential γ-γ perturbed-angular-correlations experiments performed on 111 Cd-implanted Sc 2 O 3 powder samples. From the excellent agreement between theory and experiment, we can strongly suggest that the Cd acceptor impurities are ionized at room temperature. Finally, we showed that simple calculations like those performed within the point-charge model with antishielding factors do not correctly describe the problem of a Cd impurity in Sc 2 O 3 .

  3. Defect-impurity interactions in irradiated germanium

    International Nuclear Information System (INIS)

    Cleland, J.W.; James, F.J.; Westbrook, R.D.

    1975-07-01

    Results of experiments are used to formulate a better model for the structures of lattice defects and defect-impurity complexes in irradiated n-type Ge. Single crystals were grown by the Czochralski process from P, As, or Sb-doped melts, and less than or equal to 10 15 to greater than or equal to 10 17 oxygen cm -3 was added to the furnace chamber after approximately 1 / 3 of the crystal had been solidified. Hall coefficient and resistivity measurements (at 77 0 K) were used to determine the initial donor concentration due to the dopant and clustered oxygen, and infrared absorption measurements (at 11.7 μ) were used to determine the dissociated oxygen concentration. Certain impurity and defect-impurity interactions were then investigated that occurred as a consequence of selected annealing, quenching, Li diffusion, and irradiation experiments at approximately 300 0 K with 60 Co photons, 1.5 to 2.0 MeV electrons, or thermal energy neutrons. Particular attention was given to determining the electrical role of the irradiation produced interstitial and vacancy, and to look for any evidence from electrical and optical measurements of vacancy--oxygen, lithium--oxygen, and lithium--vacancy interactions. (U.S.)

  4. Electronic structures and valence band splittings of transition metals doped GaNs

    International Nuclear Information System (INIS)

    Lee, Seung-Cheol; Lee, Kwang-Ryeol; Lee, Kyu-Hwan

    2007-01-01

    For a practical viewpoint, presence of spin splitting of valence band in host semiconductors by the doping of transition metal (TM) ions is an essential property when designing a diluted magnetic semiconductors (DMS) material. The first principle calculations were performed on the electronic and magnetic structure of 3d transition metal doped GaN. V, Cr, and Mn doped GaNs could not be candidates for DMS materials since most of their magnetic moments is concentrated on the TM ions and the splittings of valence band were negligible. In the cases of Fe, Co, Ni, and Cu doped GaNs, on the contrary, long-ranged spin splitting of valence band was found, which could be candidates for DMS materials

  5. Unravelling the interplay of geometrical, magnetic and electronic properties of metal-doped graphene nanomeshes

    KAUST Repository

    Fadlallah, Mohamed M.

    2016-12-02

    Graphene nanomeshes (GNMs), formed by creating a superlattice of pores in graphene, possess rich physical and chemical properties. Many of these properties are determined by the pore geometry. In this work, we use first principles calculations to study the magnetic and electronic properties of metal-doped nitrogen-passivated GNMs. We find that the magnetic behaviour is dependent on the pore shape (trigonal versus hexagonal) as dictated by the number of covalent bonds formed between the 3d metal and the passivating N atoms. We also find that Cr and V doped trigonal-pore GNMs, and Ti doped GNMs are the most favourable for spintronic applications. The calculated magnetic properties of Fe-doped GNMs compare well with recent experimental observations. The studied systems are useful as spin filters and chemical sensors.

  6. Electronic structure and magnetism in transition metals doped 8-hydroxy-quinoline aluminum.

    Science.gov (United States)

    Baik, Jeong Min; Shon, Yoon; Lee, Seung Joo; Jeong, Yoon Hee; Kang, Tae Won; Lee, Jong-Lam

    2008-10-15

    We report the room-temperature ferromagnetism in transition metals (Co, Ni)-doped 8-hydroxy-quinoline aluminum (Alq3) by thermal coevaporation of high purity metal and Alq3 powders. For 5% Co-doped Alq3, a maximum magnetization of approximately 0.33 microB/Co at 10 K was obtained and ferromagnetic behavior was observed up to 300 K. The Co atoms interact chemically with O atoms and provide electrons to Alq3, forming new states acting as electron trap sites. From this, it is suggested that ferromagnetism may be associated with the strong chemical interaction of Co atoms and Alq3 molecules.

  7. Stabilization of Fermi level via electronic excitation in Sn doped CdO thin films

    Science.gov (United States)

    Das, Arkaprava; Singh, Fouran

    2018-04-01

    Pure and Sn doped CdO sol-gel derived thin films were deposited on corning glass substrate and further irradiated by swift heavy ion (SHI) (Ag and O) with fluence upto 3×1013 ions/cm2. The observed tensile stress from X-ray diffraction pattern at higher fluence for Ag ions can be corroborated to the imbrications of cylindrical tracks due to multiple impacts. The anomalous band gap enhancement after irradiation may be attributed to the consolidated effect of Burstein-Moss shift (BMS) and impurity induced virtual gap states (ViGs). At higher excitation density as Fermi stabilization level (EFS) tends to coincide with charge neutrality level (CNL), band gap enhancement saturates as further creation of additional defects inside the lattice becomes unsustainable. Raman spectroscopy divulges an intensity enhancement of 478 cm-1 LO phonon mode with Sn doping and irradiation induces further asymmetric peak broadening due to damage and disordering inside the lattice. However for 3% Sn doped thin film irradiated with Ag ions having 3×1013 fluence shows a drastic change in structural properties and reduction in band gap which might be attributed to the generation of localized energy levels between conduction and valance band due to high density of defects.

  8. Structural, Optical, and Electronic Characterization of Fe-Doped Alumina Nanoparticles

    Science.gov (United States)

    Heiba, Zein K.; Mohamed, Mohamed Bakr; Wahba, Adel Maher; Imam, N. G.

    2018-01-01

    The effects of iron doping on the structural, optical, and electronic properties of doped alumina have been studied. Single-phase iron-doped alumina Al2- x Fe x O3 ( x = 0.00 to 0.30) nanoparticles were synthesized via citrate-precursor method. Formation of single-phase hexagonal corundum structure with no other separate phases was demonstrated by x-ray diffraction (XRD) analysis and Fourier-transform infrared spectroscopy. The effects of iron doping on the α-Al2O3 structural parameters, viz. atomic coordinates, lattice parameters, crystallite size, and microstrain, were estimated from XRD data by applying the Rietveld profile fitting method. Transmission electron microscopy further confirmed the nanosize nature of the prepared samples with size ranging from 12 nm to 83 nm. The electronic band structure was investigated using density functional theory calculations to explain the decrease in the energy gap of Al2- x Fe x O3 as the amount of Fe was increased. The colored emission peaks in the visible region (blue, red, violet) of the electromagnetic spectrum obtained for the Fe-doped α-Al2O3 nanoparticles suggest their potential application as ceramic nanopigments.

  9. Effects of shape, size, and pyrene doping on electronic properties of graphene nanoflakes.

    Science.gov (United States)

    Kuamit, Thanawit; Ratanasak, Manussada; Rungnim, Chompoonut; Parasuk, Vudhichai

    2017-11-25

    Effects of size, shape, and pyrene doping on electronic properties of graphene nanoflakes (GNFs) were theoretically investigated using density functional theory method with PBE, B3PW91, and M06-2X functionals and cc-pVDZ basis set. Two shapes of zigzag GNFs, hexagonal (HGN) and rhomboidal (RGN), were considered. The energy band gap of GNF depends on shape and decreases with size. The HGN has larger band gap energy (1.23-3.96 eV) than the RGN (0.13-2.12 eV). The doping of pyrene and pyrene derivatives on both HGN and RGN was also studied. The adsorption energy of pyrene and pyrene derivatives on GNF does not depend on the shape of GNFs with energies between 21 and 27 kcal mol -1 . The substituent on pyrene enhances the binding to GNF but the strength does not depend on electron withdrawing or donating capability. The doping by pyrene and pyrene derivatives also shifts the HOMO and LUMO energies of GNFs. Both positive (destabilizing) and negative (stabilizing) shifts on HOMO and LUMO of GNFs were seen. The direction and magnitude of the shift do not follow the electron withdrawing and donating capability of pyrene substituents. However, only a slight shift was observed for doped RGN. A shift of 0.19 eV was noticed for HOMO of HGN doped with 1-aminopyrene (pyNH 2 ) and of 0.04 eV for LUMO of HGN doped with 1-pyrenecarboxylic acid (pyCOOH). Graphical Abstract HOMO and LUMO Energies of pyrene/pyrene derivatives doped Graphene Nanoflakes.

  10. Conduction electrons in acceptor-doped GaAs/GaAlAs heterostructures: a review

    International Nuclear Information System (INIS)

    Zawadzki, Wlodek; Raymond, Andre; Kubisa, Maciej

    2016-01-01

    We review magneto-optical and magneto-transport effects in GaAs/GaAlAs heterostructures doped in GaAlAs barriers with donors, providing two-dimensional (2D) electron gas (2DEG) in GaAs quantum wells (QWS), and additionally doped with smaller amounts of acceptors (mostly Be atoms) in the vicinity of 2DEG. One may also deal with residual acceptors (mostly C atoms). The behavior of such systems in the presence of a magnetic field differs appreciably from those doped in the vicinity of 2DEG with donors. Three subjects related to the acceptor-doped heterostructures are considered. First is the problem of bound states of conduction electrons confined to the vicinity of negatively charged acceptors by the joint effect of a QW and an external magnetic field parallel to the growth direction. A variational theory of such states is presented, demonstrating that an electron turning around a repulsive center has discrete energies above the corresponding Landau levels. Experimental evidence for the discrete electron energies comes from the work on interband photo-magneto-luminescence, intraband cyclotron resonance and quantum magneto-transport (the Quantum Hall and Shubnikov–de Haas effects). An electron rain-down effect at weak electric fields and a boil-off effect at strong electric fields are introduced. It is demonstrated, both theoretically and experimentally, that a negatively charged acceptor can localize more than one electron. The second subject describes experiment and theory of asymmetric quantized Hall and Shubnikov–de Haas plateaus in acceptor-doped GaAs/GaAlAs heterostructures. It is shown that the main features of the plateau asymmetry can be attributed to asymmetric density of Landau states in the presence of acceptors. However, at high magnetic fields, the rain-down effect is also at work. The third subject deals with the so-called disorder modes (DMs) in the cyclotron resonance of conduction electrons. The DMs originate from random distributions of

  11. Effect of light Si doping on the properties of GaN

    International Nuclear Information System (INIS)

    Shang, Lin; Zhai, Guangmei; Jia, Zhigang; Mei, Fuhong; Lu, Taiping; Liu, Xuguang; Xu, Bingshe

    2016-01-01

    An obvious increase in electron mobility and yellow luminescence (YL) band intensity was found in light Si doping GaN. For a series of GaN samples with different doping concentration, the dislocation density is almost the same. It is inferred that the abrupt increase in mobility and YL intensity does not originate from the change of dislocation density. The mobility behavior is attributed to the screening of scattering by dislocation and increase of ionized impurity scattering with the increase of Si doping concentration. At lower doping level, the screening of dislocation scattering is dominant, which results in the increase in carrier mobility. At higher doping level, the increase in ionized impurity scattering leads to the decrease in carrier mobility. Higher mobility causes longer diffusion length of nonequilibrium carrier. More dislocations will participate in the recombination process which induces stronger YL intensity in light Si doping GaN.

  12. Formation, Energetics, and Electronic Properties of Graphene Monolayer and Bilayer Doped with Heteroatoms

    Directory of Open Access Journals (Sweden)

    Yoshitaka Fujimoto

    2015-01-01

    Full Text Available Doping with heteroatoms is one of the most effective methods to tailor the electronic properties of carbon nanomaterials such as graphene and carbon nanotubes, and such nanomaterials doped with heteroatom dopants might therefore provide not only new physical and chemical properties but also novel nanoelectronics/optoelectronics device applications. The boron and nitrogen are neighboring elements to carbon in the periodic table, and they are considered to be good dopants for carbon nanomaterials. We here review the recent work of boron and nitrogen doping effects into graphene monolayer as well as bilayer on the basis of the first-principles electronic structure calculations in the framework of the density-functional theory. We show the energetics and the electronic properties of boron and nitrogen defects in graphene monolayer and bilayer. As for the nitrogen doping, we further discuss the stabilities, the growth processes, and the electronic properties associated with the plausible nitrogen defect formation in graphene which is suggested by experimental observations.

  13. Effect of Ag Doping on the Electronic Structure and Optical Properties of ZnO(0001 Surface

    Directory of Open Access Journals (Sweden)

    Xiang Qian

    2018-01-01

    Full Text Available Using first-principle calculations, the geometrical structure, the electronic and optical properties of Ag-doped ZnO(0001 surface have been investigated. We found that Ag-doped ZnO(0001 surface is more easily formed on the first layer. On the other hand, the doped surface has gradually become an equipotential body, showing obvious metallic characteristics. We found that a new peak appeared in the low energy region after Ag doping, which was mainly due to the electron transition between the two orbital levels of Ag-4d and O-2p.

  14. Effect of dose rate, temperature and impurity content on the radiation damage in the electron irradiated NaCl crystals

    NARCIS (Netherlands)

    Dubinko, V.I.; Turkin, A.A.; Vainshtein, D.I.; Hartog, H.W. den

    The dependencies of void formation and radiolytic sodium accumulation on the irradiation dose, dose rate, temperature and impurity content are analyzed within a framework of a theoretical model, which is based on a new mechanism of dislocation climb. The mechanism involves the production of V-F

  15. Gas adsorption, energetics and electronic properties of boron- and nitrogen-doped bilayer graphenes

    Energy Technology Data Exchange (ETDEWEB)

    Fujimoto, Yoshitaka, E-mail: fujimoto@stat.phys.titech.ac.jp [Department of Physics, Tokyo Institute of Technology, Oh-okayama, Meguro-ku, Tokyo 152-8551 (Japan); Saito, Susumu [Department of Physics, Tokyo Institute of Technology, Oh-okayama, Meguro-ku, Tokyo 152-8551 (Japan); International Research Center for Nanoscience and Quantum Physics, Tokyo Institute of Technology, 2-12-1 Oh-okayama, Meguro-ku, Tokyo 152-8551 (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8503 (Japan)

    2016-10-20

    We study stabilities and electronic properties of several environmental polluting or toxic gas molecules (CO, CO{sub 2}, NO, and NO{sub 2}) adsorbed on B and N atoms in bilayer graphene using first-principles electronic-structure calculations. We find that NO and NO{sub 2} molecules can be bound chemically on B-doped bilayer graphene with large adsorption energies, while CO and CO{sub 2} molecules are not adsorbed chemically on B-doped one. In the case of the N-doped graphene, all four gases do not bind with chemical bonds but adsorb rather physically with small adsorption energies at long distances between gases and graphene. The adsorptions of NO and NO{sub 2} molecules on B-doped bilayer graphene induce the acceptor states above the Fermi energy, and we also find that the charge transfer takes place when the NO and the NO{sub 2} molecules are adsorbed. Thereby, the B-doped bilayer graphene is expected to be useful for NO and NO{sub 2} gas sensor materials.

  16. Electronic properties of B and Al doped graphane: A hybrid density functional study

    Science.gov (United States)

    Mapasha, R. E.; Igumbor, E.; Andriambelaza, N. F.; Chetty, N.

    2018-04-01

    Using a hybrid density functional theory approach parametrized by Heyd, Scuseria and Ernzerhof (HSE06 hybrid functional), we study the energetics, structural and electronic properties of a graphane monolayer substitutionally doped with the B (BCH) and Al (AlCH) atoms. The BCH defect can be integrated within a graphane monolayer at a relative low formation energy, without major structural distortions and symmetry breaking. The AlCH defect relaxes outward of the monolayer and breaks the symmetry. The density of states plots indicate that BCH doped graphane monolayer is a wide band gap semiconductor, whereas the AlCH defect introduces the spin dependent mid gap states at the vicinity of the Fermi level, revealing a metallic character with the pronounced magnetic features. We further examine the response of the Al dependent spin states on the multiple charge states doping. We find that the defect formation energy, structural and electronic properties can be altered via charge state modulation. The +1 charge doping opens an energy band gap of 1.75 eV. This value corresponds to the wavelength in the visible spectrum, suggesting an ideal material for solar cell absorbers. Our study fine tunes the graphane band gap through the foreign atom doping as well as via defect charge state modulation.

  17. Structural, electronic and magnetic properties of 3d metal trioxide clusters-doped monolayer graphene: A first-principles study

    Energy Technology Data Exchange (ETDEWEB)

    Rafique, Muhammad [School of Energy Science and Engineering, Harbin Institute of Technology, 92 West Dazhi Street, Harbin 150001 (China); M.U.E.T, S.Z.A.B, Campus Khairpur Mir' s, Sindh (Pakistan); Shuai, Yong, E-mail: shuaiyong1978@gmail.com [School of Energy Science and Engineering, Harbin Institute of Technology, 92 West Dazhi Street, Harbin 150001 (China); Tan, He-Ping; Hassan, Muhammad [School of Energy Science and Engineering, Harbin Institute of Technology, 92 West Dazhi Street, Harbin 150001 (China)

    2017-03-31

    Highlights: • First-principles calculations are performed for TMO{sub 3} cluster-doped and TM atoms adsorbed at three O atoms-doped graphene. • Significant magnetic coupling behavior is observed between TM atoms and neighboring C and O atoms for both cases. • The direction of charge transfer is always from monolayer graphene to TMO{sub 3} clusters incorporated into graphene. • TiO{sub 3} and VO{sub 3} doped structures display dilute magnetic semiconductor behavior. • Five different orbitals (d{sub xy}, d{sub yz}, d{sub z}{sup 2}, d{sub xz} and d{sub x}{sup 2}{sub -y}{sup 2}) of 3d TM atoms give rise to magnetic moments for both cases. - Abstract: We present first-principles density-functional calculations for the structural, electronic and magnetic properties of monolayer graphene doped with 3d (Ti, V, Cr, Fe, Co, Mn and Ni) metal trioxide TMO{sub 3} halogen clusters. In this paper we used two approaches for 3d metal trioxide clusters (i) TMO{sub 3} halogen cluster was embedded in monolayer graphene substituting four carbon (C) atoms (ii) three C atoms were substituted by three oxygen (O) atoms in one graphene ring and TM atom was adsorbed at the hollow site of O atoms substituted graphene ring. All the impurities were tightly bonded in the graphene ring. In first case of TMO{sub 3} doped graphene layer, the bond length between C−O atom was reduced and bond length between TM-O atom was increased. In case of Cr, Fe, Co and Ni atoms substitution in between the O atoms, leads to Fermi level shifting to conduction band thereby causing the Dirac cone to move into valence band, however a band gap appears at high symmetric K-point. In case of TiO{sub 3} and VO{sub 3} substitution, system exhibits semiconductor properties. Interestingly, TiO{sub 3}-substituted system shows dilute magnetic semiconductor behavior with 2.00 μ{sub B} magnetic moment. On the other hand, the substitution of CoO{sub 3}, CrO{sub 3}, FeO{sub 3} and MnO{sub 3} induced 1.015 μ{sub B}, 2

  18. Electron doping through lithium intercalation to interstitial channels in tetrahedrally bonded SiC

    Energy Technology Data Exchange (ETDEWEB)

    Sakai, Yuki [Department of Applied Physics, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Center for Computational Materials, Institute for Computational Engineering and Sciences, The University of Texas at Austin, Austin, Texas 78712 (United States); Oshiyama, Atsushi [Department of Applied Physics, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2015-11-07

    We report on first-principles calculations that clarify the effect of lithium atom intercalation into zinc blende 3C-silicon carbide (3C-SiC) on electronic and structural properties. Lithium atoms inside 3C-SiC are found to donate electrons to 3C-SiC that is an indication of a new way of electron doping through the intercalation. The electrons doped into the conduction band interact with lithium cations and reduce the band spacing between the original valence and conduction bands. We have also found that a silicon monovacancy in 3C-SiC promotes the lithium intercalation, showing that the vacancy generation makes SiC as a possible anode material for lithium-ion battery.

  19. Structural, electronic, and magnetic properties of 3D metal trioxide and tetraoxide superhalogen cluster-doped monolayer BN

    International Nuclear Information System (INIS)

    Meng, Jingjing; Li, Dan; Niu, Yuan; Zhao, Hongmin; Liang, Chunjun; He, Zhiqun

    2016-01-01

    The structural, electronic, and magnetic properties of monolayer BN doped with 3D metal trioxide and tetraoxide superhalogen clusters are investigated using first-principle calculations. TMO_3_(_4_)-doped monolayer BN exhibits a low negative formation energy, whereas TM atoms embedded in monolayer BN show a high positive formation energy. TMO_3_(_4_) clusters are embedded more easily in monolayer BN than TM atoms. Compared with TMO_3-doped structures, TMO_4-doped structures have a higher structural stability because of their higher binding energies. Given their low negative formation energies, TMO_4-doped structures are more favored for specific applications than TMO_3-doped structures and TM atom-doped structures. Large magnetic moments per supercell and significant ferromagnetic couplings between a TM atom and neighboring B and N atoms on the BN layer were observed in all TMO_4-doped structures, except for TiO_4-doped structures. - Highlights: • TMO_3_(_4_) superhalogen clusters incorporated into monolayer BN were investigated. • TMO_3_(_4_) clusters are embedded more easily in monolayer BN than TM atoms. • TMO_4-doped structures are more favored for specific applications. • Large magnetic moments were observed in TMO_4-doped structures. • The band gap was sensitively dependent on the doped clusters.

  20. Spin and charge density oscillations in doped magnetite

    International Nuclear Information System (INIS)

    Boekema, C.; Woude, F. van der; Sawatzky, G.A.

    1975-01-01

    A classical selfconsistent model was proposed based upon local compensation and upon neutrality conditions describing the response of conduction electrons in narrow d bands to local electric perturbation caused by an impurity placed at a particular site in the lattice. Theoretical results obtained by the model applied to magnetite are in good agreement with recent Moessbauer data on doped magnetite. (Z.S.)

  1. Effect of doping on electronic properties of double-walled carbon and boron nitride hetero-nanotubes

    International Nuclear Information System (INIS)

    Majidi, R.; Ghafoori Tabrizi, K.; Jalili, S.

    2009-01-01

    The effect of boron nitride (BN) doping on electronic properties of armchair double-walled carbon and hetero-nanotubes is studied using ab initio molecular dynamics method. The armchair double-walled hetero-nanotubes are predicted to be semiconductor and their electronic structures depend strongly on the electronic properties of the single-walled carbon nanotube. It is found that electronic structures of BN-doped double-walled hetero-nanotubes are intermediate between those of double-walled boron nitride nanotubes and double-walled carbon and boron nitride hetero-nanotubes. Increasing the amount of doping leads to a stronger intertube interaction and also increases the energy gap.

  2. Effect of doping on electronic properties of double-walled carbon and boron nitride hetero-nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Majidi, R. [Department of Physics, Shahid Beheshti University, Evin, Tehran 19839-63113 (Iran, Islamic Republic of); Ghafoori Tabrizi, K., E-mail: K-TABRIZI@sbu.ac.i [Department of Physics, Shahid Beheshti University, Evin, Tehran 19839-63113 (Iran, Islamic Republic of); Jalili, S. [Department of Chemistry, K.N. Toosi University of Technology, Tehran 16315-1618 (Iran, Islamic Republic of)

    2009-11-01

    The effect of boron nitride (BN) doping on electronic properties of armchair double-walled carbon and hetero-nanotubes is studied using ab initio molecular dynamics method. The armchair double-walled hetero-nanotubes are predicted to be semiconductor and their electronic structures depend strongly on the electronic properties of the single-walled carbon nanotube. It is found that electronic structures of BN-doped double-walled hetero-nanotubes are intermediate between those of double-walled boron nitride nanotubes and double-walled carbon and boron nitride hetero-nanotubes. Increasing the amount of doping leads to a stronger intertube interaction and also increases the energy gap.

  3. Optical and electronic properties of polyvinyl alcohol doped with pairs of mixed valence metal ions

    International Nuclear Information System (INIS)

    Bulinski, Mircea; Kuncser, Victor; Plapcianu, Carmen; Krautwald, Stefan; Franke, Hilmar; Rotaru, P; Filoti, George

    2004-01-01

    The electronic mechanisms induced by the UV exposure of thin films of polyvinyl alcohol doped with pairs of mixed valence metal ions were studied in relation to their optical behaviour by Moessbauer spectroscopy and optical absorption. The results obtained definitely point to the role of each element from the pair in the electronic mechanism involved, with influence on the optical properties regarding applications in real-time holography and integrated optics

  4. Electronic Transport Properties of Carbon-Nanotube Networks: The Effect of Nitrate Doping on Intratube and Intertube Conductances

    Science.gov (United States)

    Ketolainen, T.; Havu, V.; Jónsson, E. Ö.; Puska, M. J.

    2018-03-01

    The conductivity of carbon-nanotube (CNT) networks can be improved markedly by doping with nitric acid. In the present work, CNTs and junctions of CNTs functionalized with NO3 molecules are investigated to understand the microscopic mechanism of nitric acid doping. According to our density-functional-theory band-structure calculations, there is charge transfer from the CNT to adsorbed molecules indicating p -type doping. The average doping efficiency of the NO3 molecules is higher if the NO3 molecules form complexes with water molecules. In addition to electron transport along individual CNTs, we also study electron transport between different types (metallic, semiconducting) of CNTs. Reflecting the differences in the electronic structures of semiconducting and metallic CNTs, we find that in addition to turning semiconducting CNTs metallic, doping further increases electron transport most efficiently along semiconducting CNTs as well as through the junctions between them.

  5. Electronic Properties of LiFePO4 and Li doped LiFePO4

    International Nuclear Information System (INIS)

    Zhuang, G.V.; Allen, J.L.; Ross, P.N.; Guo, J.-H.; Jow, T.R.

    2005-01-01

    The potential use of different iron phosphates as cathode materials in lithium-ion batteries has recently been investigated.1 One of the promising candidates is LiFePO4. This compound has several advantages in comparison to the state-of-the-art cathode material in commercial rechargeable lithium batteries. Firstly, it has a high theoretical capacity (170 mAh/g). Secondly, it occurs as mineral triphylite in nature and is inexpensive, thermally stable, non-toxic and non-hygroscopic. However, its low electronic conductivity (∼10-9 S/cm) results in low power capability. There has been intense worldwide research activity to find methods to increase the electronic conductivity of LiFePO4, including supervalent ion doping,2 introducing non-carbonaceous network conduction3 and carbon coating, and the optimization of the carbon coating on LiFePO4 particle surfaces.4 Recently, the Li doped LiFePO4 (Li1+xFe1-xPO4) synthesized at ARL has yield electronic conductivity increase up to 106.5 We studied electronic structure of LiFePO4 and Li doped LiFePO4 by synchrotron based soft X-ray emission (XES) and X-ray absorption (XAS) spectroscopies. XAS probes the unoccupied partial density of states, while XES the occupied partial density of states. By combining XAS and XES measurements, we obtained information on band gap and orbital character of both LiFePO4 and Li doped LiFePO4. The occupied and unoccupied oxygen partial density of states (DOS) of LiFePO4 and 5 percent Li doped LiFePO4 are presented in Fig. 1. Our experimental results clearly indicate that LiFePO4 has wideband gap (∼ 4 eV). This value is much larger than what is predicted by DFT calculation. For 5 percent Li doped LiFePO4, a new doping state was created closer to the Fermi level, imparting p-type conductivity, consistent with thermopower measurement. Such observation substantiates the suggestion that high electronic conductivity in Li1.05Fe0.95 PO4 is due to available number of charge carriers in the material

  6. First-principles calculations of 5d atoms doped hexagonal-AlN sheets: Geometry, magnetic property and the influence of symmetry and symmetry-breaking on the electronic structure

    International Nuclear Information System (INIS)

    Zhang Zhao-Fu; Zhou Tie-Ge; Zhao Hai-Yang; Wei Xiang-Lei

    2014-01-01

    The geometry, electronic structure and magnetic property of the hexagonal AlN (h-AlN) sheet doped by 5d atoms (Lu, Hf, Ta, W, Re, Os, Ir, Pt, Au and Hg) are investigated by first-principles calculations based on the density functional theory. The influence of symmetry and symmetry-breaking is also studied. There are two types of local symmetries of the doped systems: C 3v and D 3h . The symmetry will deviate from exact C 3v and D 3h for some particular dopants after optimization. The total magnetic moments of the doped systems are 0μ B for Lu, Ta and Ir; 1μ B for Hf, W, Pt and Hg; 2μ B for Re and Au; and 3μ B for Os and Al-vacancy. The total densities of state are presented, where impurity energy levels exist. The impurity energy levels and total magnetic moments can be explained by the splitting of 5d orbitals or molecular orbitals under different symmetries. (condensed matter: structural, mechanical, and thermal properties)

  7. Dynamical impurity problems

    International Nuclear Information System (INIS)

    Emery, V.J.; Kivelson, S.A.

    1993-01-01

    In the past few years there has been a resurgence of interest in dynamical impurity problems, as a result of developments in the theory of correlated electron systems. The general dynamical impurity problem is a set of conduction electrons interacting with an impurity which has internal degrees of freedom. The simplest and earliest example, the Kondo problem, has attracted interest since the mid-sixties not only because of its physical importance but also as an example of a model displaying logarithmic divergences order by order in perturbation theory. It provided one of the earliest applications of the renormalization group method, which is designed to deal with just such a situation. As we shall see, the antiferromagnetic Kondo model is controlled by a strong-coupling fixed point, and the essence of the renormalization group solution is to carry out the global renormalization numerically starting from the original (weak-coupling) Hamiltonian. In these lectures, we shall describe an alternative route in which we identify an exactly solvable model which renormalizes to the same fixed point as the original dynamical impurity problem. This approach is akin to determining the critical behavior at a second order phase transition point by solving any model in a given universality class

  8. Dynamical impurity problems

    Energy Technology Data Exchange (ETDEWEB)

    Emery, V.J. [Brookhaven National Lab., Upton, NY (United States); Kivelson, S.A. [California Univ., Los Angeles, CA (United States). Dept. of Physics

    1993-12-31

    In the past few years there has been a resurgence of interest in dynamical impurity problems, as a result of developments in the theory of correlated electron systems. The general dynamical impurity problem is a set of conduction electrons interacting with an impurity which has internal degrees of freedom. The simplest and earliest example, the Kondo problem, has attracted interest since the mid-sixties not only because of its physical importance but also as an example of a model displaying logarithmic divergences order by order in perturbation theory. It provided one of the earliest applications of the renormalization group method, which is designed to deal with just such a situation. As we shall see, the antiferromagnetic Kondo model is controlled by a strong-coupling fixed point, and the essence of the renormalization group solution is to carry out the global renormalization numerically starting from the original (weak-coupling) Hamiltonian. In these lectures, we shall describe an alternative route in which we identify an exactly solvable model which renormalizes to the same fixed point as the original dynamical impurity problem. This approach is akin to determining the critical behavior at a second order phase transition point by solving any model in a given universality class.

  9. Enhancing electron transport in Si:P delta-doped devices by rapid thermal anneal

    International Nuclear Information System (INIS)

    Goh, K. E. J.; Augarten, Y.; Oberbeck, L.; Simmons, M. Y.

    2008-01-01

    We address the use of rapid thermal anneal (RTA) to enhance electron mobility and phase coherent transport in Si:P δ-doped devices encapsulated by low temperature Si molecular beam epitaxy while minimizing dopant diffusion. RTA temperatures of 500-700 deg. C were applied to δ-doped layers encapsulated at 250 deg. C. From 4.2 K magnetotransport measurements, we find that the improved crystal quality after RTA increases the mobility/mean free path by ∼40% and the phase coherence length by ∼25%. Our results suggest that the initial capping layer has near optimal crystal quality and transport improvement achieved by a RTA is limited

  10. Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Behzad, Somayeh, E-mail: somayeh.behzad@gmail.co [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of); Moradian, Rostam [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of); Nano Science and Technology Research Center, Razi University, Kermanshah (Iran, Islamic Republic of); Computational Physical Science Research Laboratory, Department of Nano Science, Institute for Studies in Theoretical Physics and Mathematics (IPM), P.O. Box 19395-5531, Tehran (Iran, Islamic Republic of); Chegel, Raad [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of)

    2010-12-01

    The effects of boron doping on the structural and electronic properties of (6,0)-(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

  11. Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

    International Nuclear Information System (INIS)

    Behzad, Somayeh; Moradian, Rostam; Chegel, Raad

    2010-01-01

    The effects of boron doping on the structural and electronic properties of (6,0)-(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

  12. Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

    Science.gov (United States)

    Behzad, Somayeh; Moradian, Rostam; Chegel, Raad

    2010-12-01

    The effects of boron doping on the structural and electronic properties of (6,0)@(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

  13. A computational study of magnetic exchange interactions of 3d and 4f electrons in Ti-Ce co-doped AlN

    Energy Technology Data Exchange (ETDEWEB)

    Majid, Abdul, E-mail: abdulmajid40@yahoo.com [Department of Physics, University of Gujrat, Gujrat (Pakistan); Department of Adaptive Machine Systems, Osaka University, Osaka (Japan); Azmat, Mian [Department of Physics, University of Gujrat, Gujrat (Pakistan); Rana, Usman Ali; Khan, Salah Ud-Din [Sustainable Energy Technologies Center, College of Engineering, King Saud University, PO-Box 800, Riyadh 11421 (Saudi Arabia); Alzahrani, Eman [Department of Chemistry, Faculty of Science, Taif University, 888 Taif (Saudi Arabia)

    2016-08-15

    To investigate the nature of 3d-4f exchange interactions in III-Nitride semiconductors, Ti-Ce co-doped AlN were studied using first principles calculations. The calculations were performed using supercell approach with varying dopant concentration and different inter-dopant separation. The configuration with dopant located as nearest neighbor distance and diluted concentration of 3.125% was found most stable. The results exhibited prominent evidence of 3d-4f-5d strong hybridization suggesting 3d-4f direct exchange interactions which may play valuable role to exploit the system as high Curie temperature ferromagnetic semiconductors for use in spintronics. Moreover, metal to metal charge transfer was also observed in the materials which may be exploited for their use in electrochemical applications. The 4f-5d and 3d-5d hybridizations were observed that predicts excellent luminescence phenomena in the materials. The presence of impurity related deep intermediate bands suggest applications of the materials in opto-electronic and spintronics devices. - Highlights: • Double exchange interaction in Ti:AlN. • Impurity induced narrowing of band gap. • Superexchange interaction in Ce:AlN. • 3d-4f exchange interaction between Ti-3d and Ce-4f states. • High Curie temperature n-type ferromagnetic semiconductors.

  14. A computational study of magnetic exchange interactions of 3d and 4f electrons in Ti-Ce co-doped AlN

    International Nuclear Information System (INIS)

    Majid, Abdul; Azmat, Mian; Rana, Usman Ali; Khan, Salah Ud-Din; Alzahrani, Eman

    2016-01-01

    To investigate the nature of 3d-4f exchange interactions in III-Nitride semiconductors, Ti-Ce co-doped AlN were studied using first principles calculations. The calculations were performed using supercell approach with varying dopant concentration and different inter-dopant separation. The configuration with dopant located as nearest neighbor distance and diluted concentration of 3.125% was found most stable. The results exhibited prominent evidence of 3d-4f-5d strong hybridization suggesting 3d-4f direct exchange interactions which may play valuable role to exploit the system as high Curie temperature ferromagnetic semiconductors for use in spintronics. Moreover, metal to metal charge transfer was also observed in the materials which may be exploited for their use in electrochemical applications. The 4f-5d and 3d-5d hybridizations were observed that predicts excellent luminescence phenomena in the materials. The presence of impurity related deep intermediate bands suggest applications of the materials in opto-electronic and spintronics devices. - Highlights: • Double exchange interaction in Ti:AlN. • Impurity induced narrowing of band gap. • Superexchange interaction in Ce:AlN. • 3d-4f exchange interaction between Ti-3d and Ce-4f states. • High Curie temperature n-type ferromagnetic semiconductors.

  15. Evolution of electronic structure in highly charge doped MoS2 compounds

    Science.gov (United States)

    Bin Subhan, Mohammed; Watson, Matthew; Liu, Zhongkai; Walters, Andrew; Hoesch, Moritz; Howard, Chris; Diamond I05 beamline Collaboration

    Transition-metal dichalcogenides (TMDCs) are a group of layered materials that exhibit a rich array of electronic ground states including semiconductivity, metallicity, superconductivity and charge density waves. In recent years, 2D TMDCs have attracted considerable attention due to their unique properties and potential applications in optoelectronics. It has been shown that the charge carrier density in few layer MoS2 can be tunably increased via electrostatic gating. At high levels of doping, MoS2 exhibits superconductivity with a dome-like dependence of Tc on doping analogous to that found in the cuprate superconductors. High doping can also be achieved via intercalation of alkali metals in bulk MoS2. The origin of this superconductivity is not yet fully understood with predictions ranging from exotic pairing mechanisms in bulk systems to Ising superconductivity in single layers. Despite these interesting properties, there has been limited research to date on the electronic structure of these doped compounds. Here we present our work on alkali metal intercalated MoS2 using the low temperature metal ammonia solution method. Using X-ray diffraction, Raman spectroscopy and ARPES measurements we will discuss the physical and electronic structure of these materials. EPSRC, Diamond Light Source.

  16. Well-ordered monolayers of alkali-doped coronene and picene: Molecular arrangements and electronic structures

    Energy Technology Data Exchange (ETDEWEB)

    Yano, M.; Endo, M.; Hasegawa, Y.; Okada, R.; Yamada, Y., E-mail: yamada@bk.tsukuba.ac.jp; Sasaki, M. [Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)

    2014-07-21

    Adsorptions of alkali metals (such as K and Li) on monolayers of coronene and picene realize the formation of ordered phases, which serve as well-defined model systems for metal-intercalated aromatic superconductors. Upon alkali-doping of the monolayers of coronene and picene, scanning tunneling microscopy and X-ray absorption spectroscopy revealed the rearrangement of the entire molecular layer. The K-induced reconstruction of both monolayers resulted in the formation of a structure with a herringbone-like arrangement of molecules, suggesting the intercalation of alkali metals between molecular planes. Upon reconstruction, a shift in both the vacuum level and core levels of coronene was observed as a result of a charge transfer from alkali metals to coronene. In addition, a new density of states near the Fermi level was formed in both the doped coronene and the doped picene monolayers. This characteristic electronic feature of the ordered monolayer has been also reported in the multilayer picene films, ensuring that the present monolayer can model the properties of the metal-intercalated aromatic hydrocarbons. It is suggested that the electronic structure near the Fermi level is sensitive to the molecular arrangement, and that both the strict control and determinations of the molecular structure in the doped phase should be important for the determination of the electronic structure of these materials.

  17. Ni doping effect on the electronic and sensing properties of 2D SnO2

    Science.gov (United States)

    Patel, Anjali; Roondhe, Basant; Jha, Prafulla K.

    2018-05-01

    In the present work using state of art first principles calculations under the frame work of density functional theory the effect of Nickel (Ni) doping on electronic as well as sensing properties of most stable two dimensional (2D) T-SnO2 phase towards ethanol (C2H5OH) has been observed. It has been found that Ni atom when dope on T-SnO2 causes prominent decrement in the band gap from 2.26 eV to 1.48 eV and improves the sensing phenomena of pristine T-SnO2 towards C2H5OH by increasing the binding energy from -0.18eV to -0.93eV. The comparative analysis of binding energy shows that Ni improves the binding of C2H5OH by 5.16 times the values for pristine T-SnO2. The doping of Ni into 2D T-SnO2 reduces the band gap through lowering of the conduction band minimum, thereby increasing the electron affinity which increases the sensing performance of T-SnO2. The variation in the electronic properties after and before the exposure of ethanol reinforced to use Ni:SnO2 nano structure for sensing applications. The results indicate that the Ni doped T-SnO2 can be utilized in improved optoelectronic as well as sensor devices in the future.

  18. Simulation of iron impurity in BaTiO{sub 3} crystals

    Energy Technology Data Exchange (ETDEWEB)

    Stashans, Arvids, E-mail: arvids@utpl.edu.e [Grupo de Fisicoquimica de Materiales, Instituto de Quimica Aplicada, Universidad Tecnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador); Castillo, Darwin [Grupo de Fisicoquimica de Materiales, Instituto de Quimica Aplicada, Universidad Tecnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador); Escuela de Electronica y Telecomunicaciones, Universidad Tecnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador)

    2009-05-01

    Iron-doped barium titanate (BaTiO{sub 3}) has been simulated taking into account cubic and tetragonal crystallographic lattices of the crystal. A quantum-chemical method based on the Hartree-Fock formalism has been used throughout the study. The calculated equilibrium structures of Fe-doped crystals reveal the defect-inward displacements of the Ti and O atoms whereas the shifts for the Ba atoms are encountered to be away with respect to the Fe impurity. According to the analysis of electron density population and electron band structure it is found that some unusual chemical bonding might take place between the Fe atom and its six adjacent O atoms. The role of Fe impurity in the ferroelectric polarization of the tetragonal BaTiO{sub 3} crystal has been discussed too.

  19. Simulation of iron impurity in BaTiO3 crystals

    International Nuclear Information System (INIS)

    Stashans, Arvids; Castillo, Darwin

    2009-01-01

    Iron-doped barium titanate (BaTiO 3 ) has been simulated taking into account cubic and tetragonal crystallographic lattices of the crystal. A quantum-chemical method based on the Hartree-Fock formalism has been used throughout the study. The calculated equilibrium structures of Fe-doped crystals reveal the defect-inward displacements of the Ti and O atoms whereas the shifts for the Ba atoms are encountered to be away with respect to the Fe impurity. According to the analysis of electron density population and electron band structure it is found that some unusual chemical bonding might take place between the Fe atom and its six adjacent O atoms. The role of Fe impurity in the ferroelectric polarization of the tetragonal BaTiO 3 crystal has been discussed too.

  20. Origin of poor doping efficiency in solution processed organic semiconductors† †Electronic supplementary information (ESI) available: Additional details on sample characterization, quantum chemistry calculations to obtain transition dipole moments of the ions and determine the strength of the Coulomb interaction, two-dimensional correlation analysis has been provided. In addition, this document also contains details of the calculations used to simulate 2D electronic spectra. See DOI: 10.1039/c8sc00758f

    Science.gov (United States)

    Jha, Ajay; Duan, Hong-Guang; Tiwari, Vandana; Thorwart, Michael

    2018-01-01

    Doping is an extremely important process where intentional insertion of impurities in semiconductors controls their electronic properties. In organic semiconductors, one of the convenient, but inefficient, ways of doping is the spin casting of a precursor mixture of components in solution, followed by solvent evaporation. Active control over this process holds the key to significant improvements over current poor doping efficiencies. Yet, an optimized control can only come from a detailed understanding of electronic interactions responsible for the low doping efficiencies. Here, we use two-dimensional nonlinear optical spectroscopy to examine these interactions in the course of the doping process by probing the solution mixture of doped organic semiconductors. A dopant accepts an electron from the semiconductor and the two ions form a duplex of interacting charges known as ion-pair complexes. Well-resolved off-diagonal peaks in the two-dimensional spectra clearly demonstrate the electronic connectivity among the ions in solution. This electronic interaction represents a well resolved electrostatically bound state, as opposed to a random distribution of ions. We developed a theoretical model to recover the experimental data, which reveals an unexpectedly strong electronic coupling of ∼250 cm–1 with an intermolecular distance of ∼4.5 Å between ions in solution, which is approximately the expected distance in processed films. The fact that this relationship persists from solution to the processed film gives direct evidence that Coulomb interactions are retained from the precursor solution to the processed films. This memory effect renders the charge carriers equally bound also in the film and, hence, results in poor doping efficiencies. This new insight will help pave the way towards rational tailoring of the electronic interactions to improve doping efficiencies in processed organic semiconductor thin films. PMID:29896388

  1. Insight into doping efficiency of organic semiconductors from the analysis of the density of states in n-doped C60 and ZnPc

    Science.gov (United States)

    Gaul, Christopher; Hutsch, Sebastian; Schwarze, Martin; Schellhammer, Karl Sebastian; Bussolotti, Fabio; Kera, Satoshi; Cuniberti, Gianaurelio; Leo, Karl; Ortmann, Frank

    2018-05-01

    Doping plays a crucial role in semiconductor physics, with n-doping being controlled by the ionization energy of the impurity relative to the conduction band edge. In organic semiconductors, efficient doping is dominated by various effects that are currently not well understood. Here, we simulate and experimentally measure, with direct and inverse photoemission spectroscopy, the density of states and the Fermi level position of the prototypical materials C60 and zinc phthalocyanine n-doped with highly efficient benzimidazoline radicals (2-Cyc-DMBI). We study the role of doping-induced gap states, and, in particular, of the difference Δ1 between the electron affinity of the undoped material and the ionization potential of its doped counterpart. We show that this parameter is critical for the generation of free carriers and influences the conductivity of the doped films. Tuning of Δ1 may provide alternative strategies to optimize the electronic properties of organic semiconductors.

  2. Chemical potential pinning due to equilibrium electron transfer at metal/C60-doped polymer interfaces

    Science.gov (United States)

    Heller, C. M.; Campbell, I. H.; Smith, D. L.; Barashkov, N. N.; Ferraris, J. P.

    1997-04-01

    We report electroabsorption measurements of the built-in electrostatic potential in metal/C60-doped polymer/metal structures to investigate chemical potential pinning due to equilibrium electron transfer from a metal contact to the electron acceptor energy level of C60 molecules in the polymer film. The built-in potentials of a series of structures employing thin films of both undoped and C60-doped poly[2-methoxy, 5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) were measured. For undoped MEH-PPV, which has an energy gap of about 2.4 eV, the maximum built-in potential is about 2.1 eV, whereas for C60-doped MEH-PPV the maximum built-in potential decreases to 1.5 eV. Electron transfer to the C60 molecules close to the metal interface pins the chemical potential of the metal contact near the electron acceptor energy level of C60 and decreases the built-in potential of the structure. From the systematic dependence of the built-in potential on the metal work function we find that the electron acceptor energy level of C60 in MEH-PPV is about 1.7 eV above the hole polaron energy level of MEH-PPV.

  3. Carbon Nanotube Conditioning: Ab Initio Simulations of the Effect of Interwall Interaction, Defects And Doping on the Electronic Properties of Carbon Nanotubes

    Science.gov (United States)

    Castillo, Matias Soto

    Using carbon nanotubes for electrical conduction applications at the macroscale has been shown to be a difficult task for some time now, mainly, due to defects and impurities present, and lack of uniform electronic properties in synthesized carbon nanotube bundles. Some researchers have suggested that growing only metallic armchair nanotubes and arranging them with an ideal contact length could lead to the ultimate electrical conductivity; however, such recipe presents too high of a cost to pay. A different route is to learn to manage the defects, impurities, and the electronic properties of carbon nanotubes present in bundles grown by current state-of-the-art reactors, so that the electrical conduction of a bundle or even wire may be enhanced. In our work, we have used first-principles density functional theory calculations to study the effect of interwall interaction, defects and doping on the electronic structure of metallic, semi-metal and semiconducting single- and double-walled carbon nanotubes in order to gain a clear picture of their properties. The electronic band gap for a range of zigzag single-walled carbon nanotubes with chiral indices (5,0) - (30,0) was obtained. Their properties were used as a stepping stone in the study of the interwall interaction in double-walled carbon nanotubes, from which it was found that the electronic band gap depends on the type of inner and outer tubes, average diameter, and interwall distance. The effect of vacancy defects was also studied for a range of single-walled carbon nanotubes. It was found that the electronic band gap is reduced for the entire range of zigzag carbon nanotubes, even at vacancy defects concentrations of less than 1%. Finally, interaction potentials obtained via first-principles calculations were generalized by developing mathematical models for the purpose of running simulations at a larger length scale using molecular dynamics of the adsorption doping of diatomic iodine. An ideal adsorption site

  4. Electronic properties of bromine-doped carbon nanotubes

    CERN Document Server

    Jhi, S H; Cohen, M L

    2002-01-01

    Intercalation of bromine molecules (Br2) into single-wall carbon nanotube (SWNT) ropes is studied using the ab initio pseudopotential density functional method. Electronic and vibrational properties of the SWNT and Br2 are studied for various bromine concentrations. A drastic change in the charge transfer, bromine stretching-mode, and bromine bond-length is observed when the bromine-bromine distance decreases. Calculated electronic structures show that, at high bromine concentrations, the bromine ppsigma level broadens due to the interbromine interaction. These states overlap with the electronic bands of the SWNT near the Fermi level which results in a substantial charge transfer from carbon to bromine.

  5. Electron exchange between tin impurity U{sup –} centers in PbS{sub z}Se{sub 1–z} alloys

    Energy Technology Data Exchange (ETDEWEB)

    Marchenko, A. V. [Alexander Herzen State Pedagogical University of Russia (Russian Federation); Terukov, E. I. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Seregin, P. P., E-mail: ppseregin@mail.ru; Rasnjuk, A. N.; Kiselev, V. S. [Alexander Herzen State Pedagogical University of Russia (Russian Federation)

    2016-07-15

    Using emission {sup 119mm}Sn({sup 119m}Sn) and {sup 119}Sb({sup 119m}Sn) Mössbauer spectroscopy, it is shown that impurity tin atoms in PbS{sub z}Se{sub 1–z} alloys substitute lead atoms and are two-electron donors with negative correlation energy (U{sup –} centers). It is found that the energy levels related to impurity tin atoms are in the lower half of the band gap at z ≥ 0.5 against the background of allowed valence-band states at z ≤ 0.4. The electron exchange between neutral and doubly ionized tin U{sup –} centers in partially compensated Pb{sub 0.99}Sn{sub 0.005}Na{sub 0.005}S{sub z}Se{sub 1–z} alloys is studied. The activation energy of this process decreases from 0.111(5) eV for a composition with z = 1 to 0.049(5) eV for compositions with c ≤ 0. For all z, the exchange is implemented via the simultaneous transfer of two electrons using delocalized valence-band states.

  6. Resonant States in High-Temperature Superconductors with Impurities

    CERN Document Server

    Kovacevic, Z L; Hayn, R

    2002-01-01

    A microscopic theory of resonant states for the Zn-doped CuO_2 plane in superconducting phase is formulated within the effective t-J model. In the model derived from the original p-d model Zn impurities are considered as vacancies for the d states on Cu sites. In the superconducting phase in addition to the local static perturbation induced by the vacancy a dynamical perturbation appears which results in frequency-dependent perturbation matrix. By employing the T-matrix formalism for the Green functions in terms of the Hubbard operators the local density of electronic states with d-, p- and s-symmetry is calculated.

  7. Fully Atomistic Understanding of the Electronic and Optical Properties of a Prototypical Doped Charge-Transfer Interface

    DEFF Research Database (Denmark)

    Brivio, Gian Paolo; Baby, Anu; Gruenewald, Marco

    2017-01-01

    The current study generates profound atomistic insights into doping-induced changes of the optical and electronic properties of the prototypical PTCDA/Ag(111) interface. For doping K atoms are used, as KxPTCDA/Ag(111) has the distinct advantage of forming well-defined stoichiometric phases...

  8. Strong Depletion in Hybrid Perovskite p-n Junctions Induced by Local Electronic Doping.

    Science.gov (United States)

    Ou, Qingdong; Zhang, Yupeng; Wang, Ziyu; Yuwono, Jodie A; Wang, Rongbin; Dai, Zhigao; Li, Wei; Zheng, Changxi; Xu, Zai-Quan; Qi, Xiang; Duhm, Steffen; Medhekar, Nikhil V; Zhang, Han; Bao, Qiaoliang

    2018-04-01

    A semiconductor p-n junction typically has a doping-induced carrier depletion region, where the doping level positively correlates with the built-in potential and negatively correlates with the depletion layer width. In conventional bulk and atomically thin junctions, this correlation challenges the synergy of the internal field and its spatial extent in carrier generation/transport. Organic-inorganic hybrid perovskites, a class of crystalline ionic semiconductors, are promising alternatives because of their direct badgap, long diffusion length, and large dielectric constant. Here, strong depletion in a lateral p-n junction induced by local electronic doping at the surface of individual CH 3 NH 3 PbI 3 perovskite nanosheets is reported. Unlike conventional surface doping with a weak van der Waals adsorption, covalent bonding and hydrogen bonding between a MoO 3 dopant and the perovskite are theoretically predicted and experimentally verified. The strong hybridization-induced electronic coupling leads to an enhanced built-in electric field. The large electric permittivity arising from the ionic polarizability further contributes to the formation of an unusually broad depletion region up to 10 µm in the junction. Under visible optical excitation without electrical bias, the lateral diode demonstrates unprecedented photovoltaic conversion with an external quantum efficiency of 3.93% and a photodetection responsivity of 1.42 A W -1 . © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Magnetic Properties of Electron-Doped LaCoO3

    Science.gov (United States)

    Tomiyasu, Keisuke; Sato, Mika; Koyama, Shun-Ichi; Nojima, Tsutomu; Kajimoto, Ryoichi; Ji, Sungdae; Iwasa, Kazuaki

    2017-09-01

    We studied electron-doped LaCo1 - yTey6 + O3 by magnetization measurements and neutron scattering. The effective Bohr magneton, estimated by Curie-Weiss fitting around room temperature, is independent of y. This suggests that magnetic Co3+(HS), not nonmagnetic Co3+(LS), is mainly replaced by doped magnetic Co2+(HS). At the lowest temperatures, a Brillouin-function-like saturating behavior persists in the magnetization curves even in the high-y samples, and neither a clear magnetic reflection nor magnetic dispersion is observed by neutron scattering. These findings indicate that the magnetic correlation is very weak, in contrast to the well-known hole-doped LaCoO3 accompanied by a drastic transition to a ferromagnetic metal. However, we also found that the low-y samples exhibit nonnegligible enhancement of the saturated magnetization by ˜2μB per a doped electron. All these characteristics are discussed in the light of the activation and inactivation of a spin-state blockade.

  10. Modification of doping front migration in electrochemical devices and application to organic electronics

    International Nuclear Information System (INIS)

    Nolte, Marius; Wan Xianglong; Kopp, Olga; Hermes, Ina; Panz, Jan; Rahmanian, Afsaneh; Knoll, Meinhard

    2011-01-01

    Research highlights: → In this paper we demonstrate several ways of tuning the doping front migration process in polymer electronic multilayer structures for the first time. By altering the migration layer thickness the migration velocity may be controlled and it is possible to switch between migration mechanisms. The mechanism of delamination produces rapid jumps in migration velocity, while the addition of 2-hydroxyethylcellulose (HEC) can inhibit this effect. In case of vapor activation the migration velocity may be influenced by the relative humidity or by varying the concentration of hygroscopic salts added to the migration layer. The migration mechanisms can be explained in terms of diffusion, capillary transport, and delamination. Tuning the migration process may be used to construct polymer electronic structures such as enhancement and depletion type pseudo transistors and electrical switches (ON-OFF and OFF-ON) with an improved switching time of several minutes. The doping front width is determined by microscopic optical absorption spectroscopy and can be controlled by the concentration of the doping solution. In case of low concentrations the electrochromic effect of the double front is observed. - Abstract: We demonstrate several methods of modifying the doping front migration process in multilayer structures, enabling control of migration velocity and switching between different migration mechanisms. Sharp jumps in migration velocity may be induced using a delamination effect. The influence of migration layer thickness and composition is examined. Migration velocity may also be influenced by exposing the system to a defined relative humidity or by varying the concentration of a hygroscopic salt in the migration layer. The migration mechanisms can be explained in terms of diffusion, capillary transport, and delamination. By tailoring the migration process a variety of polymer electronic structures such as pseudo transistors (enhancement and depletion

  11. Electronic and optical properties of doped oxides for energy conversion

    International Nuclear Information System (INIS)

    Silva, Antonio Ferreira da

    2016-01-01

    Full text: Photocatalytic materials have gained remarkable attention in the field of solar fuel production, which is a promising approach for efficient solar energy conversion and storage . Among other oxides, doped BiNb(Ta)O 4 , ZnO , SnO 2 , WO 3 and TiO 2 have been identified as potential photocatalytic materials due to their appropriate band gap energies. We have used high quality materials as for instance by the citrate method according to reference [1], a modified ion beam assisted deposition technique [2] and as titanium dioxide nanotubes (TiO 2 -NTs) arrays synthesized by electrochemical anodization [3]. We present the optical properties spectra of these materials using the X-ray Photoelectron Spectroscopy (XPS), Ellipsometry and first principles approach by DFT respectively [1,2]. In this work, position of reduction and oxidation level with respect to the vacuum level are identified for these materials. We can conclude that some of them are good candidates for the production of hydrogen by splitting of water in the presence of sunlight and for efficient solar energy conversion as well. [1] C. G. Almeida, R. B. Araujo, R. G. Yoshimura, A. J. S. Mascarenhas, A. Ferreira da Silva, C. M.Araujo, L. A. Silva,Int. J. Hyd. Energy 39, 1220 (2014). [2] M. Kumar, G.Baldissera, C.Persson, D.G.F.David ,M.V.S.da Silva , J.A.Freitas Jr., J.G. Tischler , J.F.D.Chubaci, M.Matsuoka , A.Ferreira da Silva, , J. of Crystal Growth 403, 124 (2014). [3] J. R. Gonzalez et all., Nanotechnology (2016 in press). (author)

  12. Electronic and optical properties of doped oxides for energy conversion

    Energy Technology Data Exchange (ETDEWEB)

    Silva, Antonio Ferreira da, E-mail: ferreira.fis@gmail.com [Universidade Federal da Bahia (UFBA), Salvador (Brazil)

    2016-07-01

    Full text: Photocatalytic materials have gained remarkable attention in the field of solar fuel production, which is a promising approach for efficient solar energy conversion and storage . Among other oxides, doped BiNb(Ta)O{sub 4}, ZnO , SnO{sub 2}, WO{sub 3} and TiO{sub 2} have been identified as potential photocatalytic materials due to their appropriate band gap energies. We have used high quality materials as for instance by the citrate method according to reference [1], a modified ion beam assisted deposition technique [2] and as titanium dioxide nanotubes (TiO{sub 2}-NTs) arrays synthesized by electrochemical anodization [3]. We present the optical properties spectra of these materials using the X-ray Photoelectron Spectroscopy (XPS), Ellipsometry and first principles approach by DFT respectively [1,2]. In this work, position of reduction and oxidation level with respect to the vacuum level are identified for these materials. We can conclude that some of them are good candidates for the production of hydrogen by splitting of water in the presence of sunlight and for efficient solar energy conversion as well. [1] C. G. Almeida, R. B. Araujo, R. G. Yoshimura, A. J. S. Mascarenhas, A. Ferreira da Silva, C. M.Araujo, L. A. Silva,Int. J. Hyd. Energy 39, 1220 (2014). [2] M. Kumar, G.Baldissera, C.Persson, D.G.F.David ,M.V.S.da Silva , J.A.Freitas Jr., J.G. Tischler , J.F.D.Chubaci, M.Matsuoka , A.Ferreira da Silva, , J. of Crystal Growth 403, 124 (2014). [3] J. R. Gonzalez et all., Nanotechnology (2016 in press). (author)

  13. Ab initio study of the EFG tensor at Cd impurities in Sc{sub 2}O{sub 3} semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Munoz, E.L.; Richard, D. [Departamento de Fisica and IFLP (CONICET-UNLP), Facultad de Ciencias Exactas, Universidad Nacional de La Plata, CC 67, 1900 La Plata (Argentina); Errico, L.A. [Departamento de Fisica and IFLP (CONICET-UNLP), Facultad de Ciencias Exactas, Universidad Nacional de La Plata, CC 67, 1900 La Plata (Argentina); Universidad Nacional del Noroeste Bonaerense (UNNOBA), Monteagudo 2772, Pergamino, CP 2700 Buenos Aires (Argentina); Renteria, M., E-mail: renteria@fisica.unlp.edu.a [Departamento de Fisica and IFLP (CONICET-UNLP), Facultad de Ciencias Exactas, Universidad Nacional de La Plata, CC 67, 1900 La Plata (Argentina)

    2009-10-01

    We present an ab initio study of diluted Cd impurities localized at both cation sites of the semiconductor Sc{sub 2}O{sub 3}. The electric-field-gradient (EFG) tensor at Cd impurities located at both cationic sites of the host structure was determined from the calculation of the electronic structure of the doped system. Calculations were performed with the full-potential augmented-plane wave plus local orbitals (APW+lo) method within the framework of the density functional theory. We studied the atomic structural relaxations and the perturbation of the electronic charge density induced by the impurities in the host system in a fully self-consistent way. We showed that the Cd impurity introduces an increase of 8% in the nearest oxygen neighbors bond-lengths, changing the EFG sign for probes located at the asymmetric cation site. The APW+lo predictions for the charged state of the Cd impurity were compared with EFG results existent in the literature, coming from time-differential gamma-gamma perturbed-angular-correlations experiments performed on {sup 111}Cd-implanted Sc{sub 2}O{sub 3} powder samples. From the excellent agreement between theory and experiment, we can strongly suggest that the Cd acceptor impurities are ionized at room temperature. Finally, we showed that simple calculations like those performed within the point-charge model with antishielding factors do not correctly describe the problem of a Cd impurity in Sc{sub 2}O{sub 3}.

  14. Highly Al-doped TiO{sub 2} nanoparticles produced by Ball Mill Method: structural and electronic characterization

    Energy Technology Data Exchange (ETDEWEB)

    Santos, Desireé M. de los, E-mail: desire.delossantos@uca.es; Navas, Javier, E-mail: javier.navas@uca.es; Sánchez-Coronilla, Antonio; Alcántara, Rodrigo; Fernández-Lorenzo, Concha; Martín-Calleja, Joaquín

    2015-10-15

    Highlights: • Highly Al-doped TiO{sub 2} nanoparticles were synthesized using a Ball Mill Method. • Al doping delayed anatase to rutile phase transformation. • Al doping allow controlling the structural and electronic properties of nanoparticles. - Abstract: This study presents an easy method for synthesizing highly doped TiO{sub 2} nanoparticles. The Ball Mill method was used to synthesize pure and Al-doped titanium dioxide, with an atomic percentage up to 15.7 at.% Al/(Al + Ti). The samples were annealed at 773 K, 973 K and 1173 K, and characterized using ICP-AES, XRD, Raman spectroscopy, FT-IR, TG, STEM, XPS, and UV–vis spectroscopy. The effect of doping and the calcination temperature on the structure and properties of the nanoparticles were studied. The results show high levels of internal doping due to the substitution of Ti{sup 4+} ions by Al{sup 3+} in the TiO{sub 2} lattice. Furthermore, anatase to rutile transformation occurs at higher temperatures when the percentage of doping increases. Therefore, Al doping allows us to control the structural and electronic properties of the nanoparticle synthesized. So, it is possible to obtain nanoparticles with anatase as predominant phase in a higher range of temperature.

  15. Highly Al-doped TiO2 nanoparticles produced by Ball Mill Method: structural and electronic characterization

    International Nuclear Information System (INIS)

    Santos, Desireé M. de los; Navas, Javier; Sánchez-Coronilla, Antonio; Alcántara, Rodrigo; Fernández-Lorenzo, Concha; Martín-Calleja, Joaquín

    2015-01-01

    Highlights: • Highly Al-doped TiO 2 nanoparticles were synthesized using a Ball Mill Method. • Al doping delayed anatase to rutile phase transformation. • Al doping allow controlling the structural and electronic properties of nanoparticles. - Abstract: This study presents an easy method for synthesizing highly doped TiO 2 nanoparticles. The Ball Mill method was used to synthesize pure and Al-doped titanium dioxide, with an atomic percentage up to 15.7 at.% Al/(Al + Ti). The samples were annealed at 773 K, 973 K and 1173 K, and characterized using ICP-AES, XRD, Raman spectroscopy, FT-IR, TG, STEM, XPS, and UV–vis spectroscopy. The effect of doping and the calcination temperature on the structure and properties of the nanoparticles were studied. The results show high levels of internal doping due to the substitution of Ti 4+ ions by Al 3+ in the TiO 2 lattice. Furthermore, anatase to rutile transformation occurs at higher temperatures when the percentage of doping increases. Therefore, Al doping allows us to control the structural and electronic properties of the nanoparticle synthesized. So, it is possible to obtain nanoparticles with anatase as predominant phase in a higher range of temperature

  16. Electronic and magnetic properties of digitally Ti doped InP: A first principles study

    International Nuclear Information System (INIS)

    Rahman, Gul; Cho, Sunglae; Hong, Soon Cheol

    2008-01-01

    Using the full-potential linearized augmented plane wave method within the generalized gradient approximation, we study the electronic and the magnetic properties of digitally Ti doped InP. It is quite interesting that digitally Ti-doped InP system shows half metallic ferromagnetism even though both bulk zinc blende TiP and InP are paramagnetic. We also investigate the electronic and the magnetic properties as a function of spacer layer thickness. Their properties such as exchange coupling constant and atomic projected density of states are more or less independent of the InP thickness. Spin density contour maps indicate that the spin-polarization is confined within the TiP plane. The system may show a highly anisotropic property in spin-polarized transport. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Structural and electronic properties of a single C chain doped zigzag BN nanoribbons

    International Nuclear Information System (INIS)

    Wu, Ping; Wang, Qianwen; Cao, Gengyu; Tang, Fuling; Huang, Min

    2014-01-01

    The effects of single C-chain on the stability, structural and electronic properties of zigzag BN nanoribbons (ZBNNRs) were investigated by first-principles calculations. C-chain was expected to dope at B-edge for all the ribbon widths N z considered. The band gaps of C-chain doped N z -ZBNNR are narrower than that of perfect ZBNNR due to new localized states induced by C-chain. The band gaps of N z -ZBNNR-C(n) are direct except for the case of C-chain position n=2. Band gaps of BN nanoribbons are tunable by C-chain and its position n, which may endow the potential applications of BNNR in electronics.

  18. Doping the Copper-Oxygen Planes with Electrons: The View with Photoemission

    Energy Technology Data Exchange (ETDEWEB)

    Armitage, Norman P.

    2002-03-07

    The undoped parent compounds of high-temperature cuprate superconductors are known to be antiferromagnetic Mott insulators. As the CuO{sub 2} planes are doped with charge carriers, the antiferromagnetic phase subsides and superconductivity emerges. The symmetry, or the lack thereof, between doping with electrons (n-type) or holes (p-type) has important theoretical implications as most models implicitly assume symmetry. However, most of what we know about these superconductors comes from experiments performed on p-type materials. The much fewer number of measurements from n-type compounds suggest that there may be both commonalities and differences between the two sides of the phase diagram. This issue of electron/hole symmetry has not been seriously discussed, perhaps, because the experimental database of n-type results is very limited.

  19. Enhancement of Perovskite Solar Cells Efficiency using N-Doped TiO2 Nanorod Arrays as Electron Transfer Layer.

    Science.gov (United States)

    Zhang, Zhen-Long; Li, Jun-Feng; Wang, Xiao-Li; Qin, Jian-Qiang; Shi, Wen-Jia; Liu, Yue-Feng; Gao, Hui-Ping; Mao, Yan-Li

    2017-12-01

    In this paper, N-doped TiO 2 (N-TiO 2 ) nanorod arrays were synthesized with hydrothermal method, and perovskite solar cells were fabricated using them as electron transfer layer. The solar cell performance was optimized by changing the N doping contents. The power conversion efficiency of solar cells based on N-TiO 2 with the N doping content of 1% (N/Ti, atomic ratio) has been achieved 11.1%, which was 14.7% higher than that of solar cells based on un-doped TiO 2 . To get an insight into the improvement, some investigations were performed. The structure was examined with X-ray powder diffraction (XRD), and morphology was examined by scanning electron microscopy (SEM). Energy dispersive spectrometer (EDS) and Tauc plot spectra indicated the incorporation of N in TiO 2 nanorods. Absorption spectra showed higher absorption of visible light for N-TiO 2 than un-doped TiO 2 . The N doping reduced the energy band gap from 3.03 to 2.74 eV. The photoluminescence (PL) and time-resolved photoluminescence (TRPL) spectra displayed the faster electron transfer from perovskite layer to N-TiO 2 than to un-doped TiO 2 . Electrochemical impedance spectroscopy (EIS) showed the smaller resistance of device based on N-TiO 2 than that on un-doped TiO 2 .

  20. Theoretical study of impurity effects in iron-based superconductors

    Science.gov (United States)

    Navarro Gastiasoro, Maria; Hirschfeld, Peter; Andersen, Brian

    2013-03-01

    Several open questions remain unanswered for the iron-based superconductors (FeSC), including the importance of electronic correlations and the symmetry of the superconducting order parameter. Motivated by recent STM experiments which show a fascinating variety of resonant defect states in FeSC, we adopt a realistic five-band model including electronic Coulomb correlations to study local effects of disorder in the FeSC. In order to minimize the number of free parameters, we use the pairing interactions obtained from spin-fluctuation exchange to determine the homogeneous superconducting state. The ability of local impurity potentials to induce resonant states depends on their scattering strength Vimp; in addition, for appropriate Vimp, such states are associated with local orbital- and magnetic order. We investigate the density of states near such impurities and show how tunneling experiments may be used to probe local induced order. In the SDW phase, we show how C2 symmetry-breaking dimers are naturally formed around impurities which also form cigar-like (pi,pi) structures embedded in the (pi,0) magnetic bulk phase. Such electronic dimers have been shown to be candidates for explaining the so-called nematogens observed previously by QPI in Co-doped CaFe2As2.

  1. TOPICAL REVIEW: Microscopic insight into properties and electronic instabilities of impurities in cubic and lower symmetry insulators: the influence of pressure

    Science.gov (United States)

    Moreno, M.; Barriuso, M. T.; Aramburu, J. A.; García-Fernández, P.; García-Lastra, J. M.

    2006-05-01

    This article reviews the microscopic origin of properties due to transition-metal (TM) impurities, M, in insulator materials. Particular attention is paid to the influence of pressure upon impurity properties. Basic concepts such as the electronic localization in an MXN complex, the electrostatic potential, VR, arising from the rest of the lattice ions or the elastic coupling of the complex to the host lattice are initially exposed. The dependence of optical and magnetic parameters on the impurity-ligand distance, R, in cubic lattices is discussed in a first step. Emphasis is put on the actual origin of the R dependence of 10Dq. Examples revealing that laws for strict cubic symmetry cannot in general be transferred to lower symmetries are later given. This relevant fact is shown to come from allowed hybridizations like nd-(n+1)s as well as the influence of VR. As a salient feature the different colour in ruby and emerald is stressed to arise from distinct VR potentials in Al2O3 and Be3Si6Al2O18. The last part of this review deals with electronic instabilities. The phenomena associated with the Jahn-Teller (JT) effect in cubic lattices, the origin of the energy barrier among equivalent minima and the existence of coherent tunnelling in systems like MgO:Cu2+ are discussed. An increase of elastic coupling is pointed out to favour a transition from an elongated to a compressed equilibrium conformation. Interestingly the equilibrium geometry of JT ions in non-cubic lattices is shown to be controlled by mechanisms different to those in cubic systems, VR playing again a key role. The relevance of first principles calculations for clarifying the subtle mechanisms behind off-centre instabilities is also pointed out. Examples concern monovalent and divalent TM impurities in lattices with the CaF2 structure. The instability due to the transition from the ground to an excited state is finally considered. For complexes with significant elastic coupling vibrational frequencies

  2. Study of structural and electronic transport properties of Ce-doped ...

    Indian Academy of Sciences (India)

    Abstract. The structural and electronic transport properties of La1−x Cex MnO3 (x =0.0–1.0) have been studied. All the samples exhibit orthorhombic crystal symmetry and the unit cell volume de- creases with Ce doping. They also make a metal–insulator transition (MIT) and transition temper- ature increases with increase in ...

  3. Electron transport due to inhomogeneous broadening and its potential impact on modulation speed in p-doped quantum dot lasers

    International Nuclear Information System (INIS)

    Deppe, D G; Freisem, S; Huang, H; Lipson, S

    2005-01-01

    Data are first presented on spontaneous and laser emission of p-doped and undoped quantum dot (QD) heterostructures to characterize the increase in optical gain in p-type modulation doped QD lasers. Because the increase in gain due to p-doping should also increase the differential gain, but does not greatly increase the modulation speed in present p-doped QD lasers, we further examine nonequilibrium electron transport effects in p-doped active material that may still limit the modulation speed. Electron transport through the dot wetting layer caused by the nonlasing QDs of the active ensemble is shown to be capable of substantially reducing the modulation speed, independent of the differential gain. This nonequilibrium limitation can be eliminated by reducing the inhomogeneous broadening in the QD ensemble

  4. Tuning the electronic properties of armchair carbon nanoribbons by a selective boron doping

    International Nuclear Information System (INIS)

    Navarro-Santos, P; Ricardo-Chavez, J L; Lopez-Sandoval, R; Reyes-Reyes, M; Rivera, J L

    2010-01-01

    Armchair carbon nanoribbons (ACNRs) substitutionally doped with boron atoms are investigated in the framework of first-principles density functional theory. Different boron-boron arrangements and concentrations are considered in order to simulate possible aggregation patterns, their structural stability and electronic behavior are determined as a function of ribbon size. In agreement with previous studies, our results show that the dopant atoms have in general a preference for edge sites, but specific effects appear as a function of concentration that importantly modify the properties of the ribbons compared to the pristine case. Interesting tendencies are discovered as a function of dopant concentration that significantly affect the electronic properties of the ribbons. We have found that BC 3 island formation and edge doping are the most important factors for the structural stabilization of the ribbons with high boron concentration (>7%) whereas for the cases of low boron concentrations ( 3 island patterns give rise to highly localized B states on top of the Fermi level, resulting in semiconducting behavior. On the other hand, when the average distance between the B atoms increases beyond island stoichiometry, the localization of their states is reduced and the ribbons may become metallic due to a band crossing caused by the lowering of the Fermi level resulting from the positive charge doping. Thus, tuning the dopant interaction would be an appropriate way to tailor the electronic properties of the ribbons in a convenient manner in view of potential technological applications.

  5. Implications of orbital hybridization on the electronic properties of doped quantum dots: the case of Cu:CdSe

    Science.gov (United States)

    Wright, Joshua T.; Forsythe, Kyle; Hutchins, Jamie; Meulenberg, Robert W.

    2016-04-01

    This paper investigates how chemical dopants affect the electronic properties of CdSe quantum dots (QDs) and why a model that incorporates the concepts of orbital hybridization must be used to understand these properties. Extended X-ray absorption fine structure spectroscopy measurements show that copper dopants in CdSe QDs occur primarily through a statistical doping mechanism. Ultraviolet photoemission spectroscopy (UPS) experiments provide a detailed insight on the valence band (VB) structure of doped and undoped QDs. Using UPS measurements, we are able to observe photoemission from the Cu d-levels above VB maximum of the QDs which allows a complete picture of the energy band landscape of these materials. This information provides insights into many of the physical properties of doped QDs, including the highly debated near-infrared photoluminescence in Cu doped CdSe QDs. We show that all our results point to a common theme of orbital hybridization in Cu doped CdSe QDs which leads to optically and electronically active states below the conduction band minimum. Our model is supported from current-voltage measurements of doped and undoped materials, which exhibit Schottky to Ohmic behavior with Cu doping, suggestive of a tuning of the lowest energy states near the Fermi level.This paper investigates how chemical dopants affect the electronic properties of CdSe quantum dots (QDs) and why a model that incorporates the concepts of orbital hybridization must be used to understand these properties. Extended X-ray absorption fine structure spectroscopy measurements show that copper dopants in CdSe QDs occur primarily through a statistical doping mechanism. Ultraviolet photoemission spectroscopy (UPS) experiments provide a detailed insight on the valence band (VB) structure of doped and undoped QDs. Using UPS measurements, we are able to observe photoemission from the Cu d-levels above VB maximum of the QDs which allows a complete picture of the energy band landscape of

  6. The Electronic Properties of O-Doped Pure and Sulfur Vacancy-Defect Monolayer WS₂: A First-Principles Study.

    Science.gov (United States)

    Wang, Weidong; Bai, Liwen; Yang, Chenguang; Fan, Kangqi; Xie, Yong; Li, Minglin

    2018-01-31

    Based on the density functional theory (DFT), the electronic properties of O-doped pure and sulfur vacancy-defect monolayer WS₂ are investigated by using the first-principles method. For the O-doped pure monolayer WS₂, four sizes (2 × 2 × 1, 3 × 3 × 1, 4 × 4 × 1 and 5 × 5 × 1) of supercell are discussed to probe the effects of O doping concentration on the electronic structure. For the 2 × 2 × 1 supercell with 12.5% O doping concentration, the band gap of O-doped pure WS₂ is reduced by 8.9% displaying an indirect band gap. The band gaps in 3 × 3 × 1 and 4 × 4 × 1 supercells are both opened to some extent, respectively, for 5.55% and 3.13% O doping concentrations, while the band gap in 5 × 5 × 1 supercell with 2.0% O doping concentration is quite close to that of the pure monolayer WS₂. Then, two typical point defects, including sulfur single-vacancy (V S ) and sulfur divacancy (V 2S ), are introduced to probe the influences of O doping on the electronic properties of WS₂ monolayers. The observations from DFT calculations show that O doping can broaden the band gap of monolayer WS₂ with V S defect to a certain degree, but weaken the band gap of monolayer WS₂ with V 2S defect. Doping O element into either pure or sulfur vacancy-defect monolayer WS₂ cannot change their band gaps significantly, however, it still can be regarded as a potential method to slightly tune the electronic properties of monolayer WS₂.

  7. Very heavily electron-doped CrSi2 as a high-performance high-temperature thermoelectric material

    International Nuclear Information System (INIS)

    Parker, David; Singh, David J

    2012-01-01

    We analyze the thermoelectric behavior, using first principles and Boltzmann transport calculations, of very heavily electron-doped CrSi 2 and find that at temperatures of 900-1250 K and electron dopings of 1-4 × 10 21 cm -3 , thermopowers as large in magnitude as 200 μV K -1 may be found. Such high thermopowers at such high carrier concentrations are extremely rare, and suggest that excellent thermoelectric performance may be found in these ranges of temperature and doping. (paper)

  8. Electronic structures and three-dimensional effects of boron-doped carbon nanotubes

    International Nuclear Information System (INIS)

    Koretsune, Takashi; Saito, Susumu

    2008-01-01

    We study boron-doped carbon nanotubes by first-principles methods based on the density functional theory. To discuss the possibility of superconductivity, we calculate the electronic band structure and the density of states (DOS) of boron-doped (10,0) nanotubes by changing the boron density. It is found that the Fermi level density of states D(ε F ) increases upon lowering the boron density. This can be understood in terms of the rigid band picture where the one-dimensional van Hove singularity lies at the edge of the valence band in the DOS of the pristine nanotube. The effect of three-dimensionality is also considered by performing the calculations for bundled (10,0) nanotubes and boron-doped double-walled carbon nanotubes (10,0)/(19,0). From the calculation of the bundled nanotubes, it is found that interwall dispersion is sufficiently large to broaden the peaks of the van Hove singularity in the DOS. Thus, to achieve the high D(ε F ) using the bundle of nanotubes with single chirality, we should take into account the distance from each nanotube. In the case of double-walled carbon nanotubes, we find that the holes introduced to the inner tube by boron doping spread also on the outer tube, while the band structure of each tube remains almost unchanged.

  9. Impurity-defect complexes in hydrogenated amorphous silicon

    International Nuclear Information System (INIS)

    Yang, L.H.; Fong, C.Y.; Nichols, C.S.

    1991-01-01

    The two most outstanding features observed for dopants in hydrogenated amorphous silicon (a-Si:H)-a shift in the Fermi level accompanied by an increase in the defect density and an absence of degenerate doping have previously been postulated to stem from the formation of substitutional dopant-dangling bond complexes. Using first-principles self-consistent pseudopotential calculations in conjunction with a supercell model for the amorphous network and the ability of network relaxation from the first-principles results. The authors have studied the electronic and structural properties of substitutional fourfold-coordinated phosphorus and boron at the second neighbor position to a dangling bond defect. This paper demonstrates that such impurity-defect complexes can account for the general features observed experimentally in doped a-Si:H

  10. Application of Degenerately Doped Metal Oxides in the Study of Photoinduced Interfacial Electron Transfer.

    Science.gov (United States)

    Farnum, Byron H; Morseth, Zachary A; Brennaman, M Kyle; Papanikolas, John M; Meyer, Thomas J

    2015-06-18

    Degenerately doped In2O3:Sn semiconductor nanoparticles (nanoITO) have been used to study the photoinduced interfacial electron-transfer reactivity of surface-bound [Ru(II)(bpy)2(4,4'-(PO3H2)2-bpy)](2+) (RuP(2+)) molecules as a function of driving force over a range of 1.8 eV. The metallic properties of the ITO nanoparticles, present within an interconnected mesoporous film, allowed for the driving force to be tuned by controlling their Fermi level with an external bias while their optical transparency allowed for transient absorption spectroscopy to be used to monitor electron-transfer kinetics. Photoinduced electron transfer from excited-state -RuP(2+*) molecules to nanoITO was found to be dependent on applied bias and competitive with nonradiative energy transfer to nanoITO. Back electron transfer from nanoITO to oxidized -RuP(3+) was also dependent on the applied bias but without complication from inter- or intraparticle electron diffusion in the oxide nanoparticles. Analysis of the electron injection kinetics as a function of driving force using Marcus-Gerischer theory resulted in an experimental estimate of the reorganization energy for the excited-state -RuP(3+/2+*) redox couple of λ* = 0.83 eV and an electronic coupling matrix element, arising from electronic wave function overlap between the donor orbital in the molecule and the acceptor orbital(s) in the nanoITO electrode, of Hab = 20-45 cm(-1). Similar analysis of the back electron-transfer kinetics yielded λ = 0.56 eV for the ground-state -RuP(3+/2+) redox couple and Hab = 2-4 cm(-1). The use of these wide band gap, degenerately doped materials provides a unique experimental approach for investigating single-site electron transfer at the surface of oxide nanoparticles.

  11. Combined Electrical, Optical and Nuclear Investigations of Impurities and Defects in II-VI Semiconductors

    CERN Multimedia

    2002-01-01

    % IS325 \\\\ \\\\ To achieve well controlled bipolar conductivity in II-VI semiconductors represents a fundamental problem in semiconductor physics. The doping problems are controversely discussed, either in terms of self compensation or of compensation and passivation by unintentionally introduced impurities. \\\\ \\\\It is the goal of our experiments at the new ISOLDE facility, to shed new light on these problems and to look for ways to circumvent it. For this aim the investigation of impurities and native defects and the interaction between each other shall be investigated. The use of radioactive ion beams opens the access to controlled site selective doping of only one sublattice via nuclear transmutation. The compensating and passivating mechanisms will be studied by combining nuclear, electrical and optical methods like Perturbed Angular Correlation~(PAC), Hall Effect~(HE), Deep Level Transient Spectroscopy~(DLTS), Photoluminescence Spectroscopy~(PL) and electron paramagnetic resonance (EPR). \\\\ \\\\We intend to ...

  12. Suppression of Electron Spin Relaxation in Mn-Doped GaAs

    Science.gov (United States)

    Astakhov, G. V.; Dzhioev, R. I.; Kavokin, K. V.; Korenev, V. L.; Lazarev, M. V.; Tkachuk, M. N.; Kusrayev, Yu. G.; Kiessling, T.; Ossau, W.; Molenkamp, L. W.

    2008-08-01

    We report a surprisingly long spin relaxation time of electrons in Mn-doped p-GaAs. The spin relaxation time scales with the optical pumping and increases from 12 ns in the dark to 160 ns upon saturation. This behavior is associated with the difference in spin relaxation rates of electrons precessing in the fluctuating fields of ionized or neutral Mn acceptors, respectively. For the latter, the antiferromagnetic exchange interaction between a Mn ion and a bound hole results in a partial compensation of these fluctuating fields, leading to the enhanced spin memory.

  13. Tuning the electronic properties of armchair carbon nanoribbons by a selective boron doping

    Energy Technology Data Exchange (ETDEWEB)

    Navarro-Santos, P; Ricardo-Chavez, J L; Lopez-Sandoval, R [Instituto Potosino de Investigacion Cientifica y Tecnologica, Camino a la presa San Jose 2055, San Luis Potosi 78216 (Mexico); Reyes-Reyes, M [Instituto de Investigacion en Comunicacion Optica, Universidad Autonoma de San Luis Potosi, Alvaro Obregon 64, San Luis Potosi 78000 (Mexico); Rivera, J L, E-mail: sandov@ipicyt.edu.m [Facultad de Ingenieria Quimica, Universidad Michoacana de San Nicolas de Hidalgo, Santiago Tapia 403, Morelia, Michoacan, 58000 (Mexico)

    2010-12-22

    Armchair carbon nanoribbons (ACNRs) substitutionally doped with boron atoms are investigated in the framework of first-principles density functional theory. Different boron-boron arrangements and concentrations are considered in order to simulate possible aggregation patterns, their structural stability and electronic behavior are determined as a function of ribbon size. In agreement with previous studies, our results show that the dopant atoms have in general a preference for edge sites, but specific effects appear as a function of concentration that importantly modify the properties of the ribbons compared to the pristine case. Interesting tendencies are discovered as a function of dopant concentration that significantly affect the electronic properties of the ribbons. We have found that BC{sub 3} island formation and edge doping are the most important factors for the structural stabilization of the ribbons with high boron concentration (>7%) whereas for the cases of low boron concentrations (<5%) the structural stabilities are similar. For all the doped cases, we have found that the BC{sub 3} island patterns give rise to highly localized B states on top of the Fermi level, resulting in semiconducting behavior. On the other hand, when the average distance between the B atoms increases beyond island stoichiometry, the localization of their states is reduced and the ribbons may become metallic due to a band crossing caused by the lowering of the Fermi level resulting from the positive charge doping. Thus, tuning the dopant interaction would be an appropriate way to tailor the electronic properties of the ribbons in a convenient manner in view of potential technological applications.

  14. Influence of argon impurities on the elastic scattering of x-rays from imploding beryllium capsules

    Science.gov (United States)

    Saunders, A. M.; Chapman, D. A.; Kritcher, A. L.; Schoff, M.; Shuldberg, C.; Landen, O. L.; Glenzer, S. H.; Falcone, R. W.; Gericke, D. O.; Döppner, T.

    2018-03-01

    We investigate the effect of argon impurities on the elastic component of x-ray scattering spectra taken from directly driven beryllium capsule implosions at the OMEGA laser. The plasma conditions were obtained in a previous analysis [18] by fitting the inelastic scattering component. We show that the known argon impurity in the beryllium modifies the elastic scattering due to the larger number of bound electrons. We indeed find significant deviations in the elastic scattering from roughly 1 at.% argon contained in the beryllium. With knowledge of the argon impurity fraction, we use the elastic scattering component to determine the charge state of the compressed beryllium, as the fits are rather insensitive to the argon charge state. Finally, we discuss how doping small fractions of mid- or high-Z elements into low-Z materials could allow ionization balance studies in dense plasmas.

  15. Impurity Induced Phase Competition and Supersolidity

    Science.gov (United States)

    Karmakar, Madhuparna; Ganesh, R.

    2017-12-01

    Several material families show competition between superconductivity and other orders. When such competition is driven by doping, it invariably involves spatial inhomogeneities which can seed competing orders. We study impurity-induced charge order in the attractive Hubbard model, a prototypical model for competition between superconductivity and charge density wave order. We show that a single impurity induces a charge-ordered texture over a length scale set by the energy cost of the competing phase. Our results are consistent with a strong-coupling field theory proposed earlier in which superconducting and charge order parameters form components of an SO(3) vector field. To discuss the effects of multiple impurities, we focus on two cases: correlated and random distributions. In the correlated case, the CDW puddles around each impurity overlap coherently leading to a "supersolid" phase with coexisting pairing and charge order. In contrast, a random distribution of impurities does not lead to coherent CDW formation. We argue that the energy lowering from coherent ordering can have a feedback effect, driving correlations between impurities. This can be understood as arising from an RKKY-like interaction, mediated by impurity textures. We discuss implications for charge order in the cuprates and doped CDW materials such as NbSe2.

  16. Nanostructured PLD-grown gadolinia doped ceria: Chemical and structural characterization by transmission electron microscopy techniques

    DEFF Research Database (Denmark)

    Rodrigo, Katarzyna Agnieszka; Wang, Hsiang-Jen; Heiroth, Sebastian

    2011-01-01

    The morphology as well as the spatially resolved elemental and chemical characterization of 10 mol% gadolinia doped ceria (CGO10) structures prepared by pulsed laser deposition (PLD) technique are investigated by scanning transmission electron microscopy accompanied with electron energy loss spec......, indicate apparent variation of the ceria valence state across and along the film. No element segregation to the grain boundaries is detected. These results are discussed in the context of solid oxide fuel cell applications.......The morphology as well as the spatially resolved elemental and chemical characterization of 10 mol% gadolinia doped ceria (CGO10) structures prepared by pulsed laser deposition (PLD) technique are investigated by scanning transmission electron microscopy accompanied with electron energy loss...... spectroscopy and energy dispersive X-ray spectroscopy. A dense, columnar and structurally inhomogeneous CGO10 film, i.e. exhibiting grain size refinement across the film thickness, is obtained in the deposition process. The cerium M4,5 edges, used to monitor the local electronic structure of the grains...

  17. Electronic transport in tungsten and iron-doped tungsten below 1 K

    International Nuclear Information System (INIS)

    Uher, C.; Khoshnevisan, M.; Pratt, W.P. Jr.; Bass, J.

    1979-01-01

    The electric resistivity rho and the thermoelectric ratio G have been measured for zone-refined single crystals of both tungsten and iron-doped tungsten from 5 K down to 40 mK. The samples had residual resistance ratios RRR ranging from 1750 to 90,000. The observed behavior is conveniently divided into two classes, ''normal'' and ''anomalous.'' Completely normal behavior was displayed by only three W samples with high RRRs. The Fe-doped W and the remaining W samples contained one or more anomalies. Normal behavior is that which would be expected for W containing impurities with no internal degrees of freedom. In normal behavior rho decreased monotonically with decreasing temperature and was consistent with the equation rho=rho 0 +AT 2 below about 1.5K. In normal behavior, G was positive and constant below about 0.5 K, increased in magnitude as T rose to 4 or 5 K, and then began to decrease, becoming negative above about 7 K. The anomalous class displayed at least one of three anomalies: (1) a minimum in the electrical resistivity, with an approximately logarithmic variation with T at temperatures below the minimum; (2) a positive contribution to G which increased in magnitude with decreasing temperature approximately at T/sup -1/2/ from about 4 K down to at least 0.5 K; and (3) a negative contribution to G which set in at about 0.5 K, varied approximately as log T, and dominated G at the lowest temperatures

  18. Effects of hydrogen-like impurity and electromagnetic field on quantum transition of an electron in a Gaussian potential with QD thickness

    Science.gov (United States)

    Xin, Wei; Zhao, Yu-Wei; Sudu; Eerdunchaolu

    2018-05-01

    Considering Hydrogen-like impurity and the thickness effect, the eigenvalues and eigenfunctions of the electronic ground and first exited states in a quantum dot (QD) are derived by using the Lee-Low-Pins-Pekar variational method with the harmonic and Gaussian potentials as the transverse and longitudinal confinement potentials, respectively. A two-level system is constructed on the basis of those two states, and the electronic quantum transition affected by an electromagnetic field is discussed in terms of the two-level system theory. The results indicate the Gaussian potential reflects the real confinement potential more accurately than the parabolic one; the influence of the thickness of the QD on the electronic transition probability is interesting and significant, and cannot be ignored; the electronic transition probability Γ is influenced significantly by some physical quantities, such as the strength of the electron-phonon coupling α, the electric-field strength F, the magnetic-field cyclotron frequency ωc , the barrier height V0 and confinement range L of the asymmetric Gaussian potential, suggesting the transport and optical properties of the QD can be manipulated further though those physical quantities.

  19. Electron-tunneling observation of local excited states in manganese-doped indium

    International Nuclear Information System (INIS)

    Tsang, J.; Ginsberg, D.M.

    1980-01-01

    We have measured the electron-tunneling characteristics of a dilute indium-manganese alloy. Well-defined structure was observed, corresponding to a band of local excited states within the energy gap. The measurements were made on two samples, and were quantitatively compared with the theory of Shiba and of Rusinov. We obtained good agreement of the tunneling data with the theory by taking into account only s-wave scattering of conduction electrons from the magnetic-impurity atoms. Even better agreement was obtained by including p- and d-wave scattering. Only by including these higher partial waves could we account for the magnitude of the observed depression of the transition temperature. The phase shifts used are in good agreement with band-theory values calculated recently

  20. Doping effect in Si nanocrystals

    Science.gov (United States)

    Li, Dongke; Xu, Jun; Zhang, Pei; Jiang, Yicheng; Chen, Kunji

    2018-06-01

    Intentional doping in semiconductors is a fundamental issue since it can control the conduction type and ability as well as modify the optical and electronic properties. To realize effective doping is the basis for developing semiconductor devices. However, by reducing the size of a semiconductor, like Si, to the nanometer scale, the doping effects become complicated due to the coupling between the quantum confinement effect and the surfaces and/or interfaces effect. In particular, by introducing phosphorus or boron impurities as dopants into material containing Si nanocrystals with a dot size of less than 10 nm, it exhibits different behaviors and influences on the physical properties from its bulk counterpart. Understanding the doping effects in Si nanocrystals is currently a challenge in order to further improve the performance of the next generation of nano-electronic and photonic devices. In this review, we present an overview of the latest theoretical studies and experimental results on dopant distributions and their effects on the electronic and optical properties of Si nanocrystals. In particular, the advanced characterization techniques on dopant distribution, the carrier transport process as well as the linear and nonlinear optical properties of doped Si nanocrystals, are systematically summarized.

  1. Phase transitions and doping in semiconductor nanocrystals

    Science.gov (United States)

    Sahu, Ayaskanta

    Colloidal semiconductor nanocrystals are a promising technological material because their size-dependent optical and electronic properties can be exploited for a diverse range of applications such as light-emitting diodes, bio-labels, transistors, and solar cells. For many of these applications, electrical current needs to be transported through the devices. However, while their solution processability makes these colloidal nanocrystals attractive candidates for device applications, the bulky surfactants that render these nanocrystals dispersible in common solvents block electrical current. Thus, in order to realize the full potential of colloidal semiconductor nanocrystals in the next-generation of solid-state devices, methods must be devised to make conductive films from these nanocrystals. One way to achieve this would be to add minute amounts of foreign impurity atoms (dopants) to increase their conductivity. Electronic doping in nanocrystals is still very much in its infancy with limited understanding of the underlying mechanisms that govern the doping process. This thesis introduces an innovative synthesis of doped nanocrystals and aims at expanding the fundamental understanding of charge transport in these doped nanocrystal films. The list of semiconductor nanocrystals that can be doped is large, and if one combines that with available dopants, an even larger set of materials with interesting properties and applications can be generated. In addition to doping, another promising route to increase conductivity in nanocrystal films is to use nanocrystals with high ionic conductivities. This thesis also examines this possibility by studying new phases of mixed ionic and electronic conductors at the nanoscale. Such a versatile approach may open new pathways for interesting fundamental research, and also lay the foundation for the creation of novel materials with important applications. In addition to their size-dependence, the intentional incorporation of

  2. Strain-mediated electronic properties of pristine and Mn-doped GaN monolayers

    Science.gov (United States)

    Sharma, Venus; Srivastava, Sunita

    2018-04-01

    Graphene-like two-dimensional (2D) monolayer structures GaN has gained enormous amount of interest due to high thermal stability and inherent energy band gap for practical applications. First principles calculations are performed to investigate the electronic structure and strain-mediated electronic properties of pristine and Mn-doped GaN monolayer. Binding energy of Mn dopant at various adsorption site is found to be nearly same indicating these sites to be equally favorable for adsorption of foreign atom. Depending on the adsorption site, GaN monolayer can act as p-type or n-type magnetic semiconductor. The tensile strength of both pristine and doped GaN monolayer (∼24 GPa) at ultimate tensile strain of 34% is comparable with the tensile strength of graphene. The in-plane biaxial strain modulate the energy band gap of both pristine and doped-monolayer from direct to indirect gap semiconductor and finally retendered theme into metal at critical value of applied strain. These characteristics make GaN monolayer to be potential candidate for the future applications in tunable optoelectronics.

  3. Spin-state blockade in Te6+-substituted electron-doped LaCoO3

    Science.gov (United States)

    Tomiyasu, Keisuke; Koyama, Shun-Ichi; Watahiki, Masanori; Sato, Mika; Nishihara, Kazuki; Onodera, Mitsugi; Iwasa, Kazuaki; Nojima, Tsutomu; Yamasaki, Yuuichi; Nakao, Hironori; Murakami, Youichi

    2015-03-01

    Perovskite-type LaCoO3 (Co3+: d6) is a rare inorganic material with sensitive and characteristic responses among low, intermediate, and high spin states. For example, in insulating nonmagnetic low-spin states below about 20 K, light hole doping (Ni substitution) induces much larger magnetization than expected; over net 10μB/hole (5μB/Ni) for 1μB/hole (1μB/Ni), in which the nearly isolated dopants locally change the surrounding Co low-spin states to magnetic ones and form spin molecules with larger total spin. Further, the former is isotropic, whereas the latter exhibits characteristic anisotropy probably because of Jahn-Teller distortion. In contrast, for electron doping, relatively insensitive spin-state responses were reported, as in LaCo(Ti4+) O3, but are not clarified, and are somewhat controversial. Here, we present macroscopic measurement data of another electron-doped system LaCo(Te6+) O3 and discuss the spin-state responses. This study was financially supported by Grants-in-Aid for Young Scientists (B) (No. 22740209 and 26800174) from the MEXT of Japan.

  4. Photon-mediated electron multiplication in liquid xenon doped with trimethylamine

    International Nuclear Information System (INIS)

    Sano, Toshio; Ashikaga, Kinya; Doke, Tadayoshi; Hitachi, Akira; Kikuchi, Jun; Masuda, Kimiaki; Okumura, Yasuaki

    1989-01-01

    Electron multiplication mediated by photons has been observed in liquid xenon doped with trimethylamine in concentrations of 0, 9.3, 43, 118 and 400 ppm. The effect was observed by irradiating a single wire counter with 1 MeV electrons and gamma rays from 207 Bi sources. The multiplication factor was observed to increase from a value of 23 at a concentration of 9.3 ppm to a value of 45 at a concentration of 118 ppm. Over the same range of concentrations, the threshold anode voltage for photon-mediated electron multiplication (PMEM) decreased from 2.5 to 1.4 kV and the PMEM results in a deterioration of energy resolution. At a concentration of 400 ppm, the resulting electron multiplication was neither stable nor reproducible. (orig.)

  5. Effect of doping on the Raman lineshape and intensity of graphene

    Science.gov (United States)

    Casiraghi, Cinzia; Basko, Denis M.; Ferrari, Andrea C.

    2010-03-01

    Graphene can be doped by applying a gate voltage [1-2]. Doping strongly affects the G and 2D Raman peaks: i) the G peak upshifts for increasing doping, while its width decreases [1]; ii) the 2D upshifts for p-doping, while it downshifts for n-doping [2]. iii) the ratio between the 2D and G peaks intensity decreases for increasing doping [2]. The 2D intensity is strongly affected by the electron-electron scattering rate, which increases with doping [3]. Similar Raman peaks variations were observed for non-gated samples, as an effect of charged impurities [4]. Here we use the 2D peak intensity variation with doping to extract the electron-phonon scattering rate [3,5]. We note that in non-gated samples, where the Fermi level shift is induced by charged impurities, we can probe the 2D peak dependence much closer to the Dirac point than in gated ones [5]. We find an electron-phonon coupling scattering rate of 60 ps-1 at 2.41 eV excitation energy [3,5]. [4pt] [1] S. Pisana et al, Nature Mat. 6, 198 (2007)[0pt] [2] A. Das et al., Nature Nanotech. 3, 210 (2008)[0pt] [3] D. M. Basko et al. PRB 80, 165413 (2009)[0pt] [4] C. Casiraghi et al., APL 91, 233108 (2007)[0pt] [5] C. Casiraghi, arXiv:0908.4480

  6. Field-swept pulsed electron paramagnetic resonance of Cr3+-doped ZBLAN fluoride glass

    International Nuclear Information System (INIS)

    Drew, S.C.; Pilbrow, J.R.; Newman, P.J.; MacFarlane, D.R.

    2001-01-01

    Field-swept pulsed electron paramagnetic resonance (EPR) spectra of a ZBLAN fluoride glass doped with a low concentration of Cr 3+ are obtained using echo-detected EPR and hole-burning free induction decay detection. We review the utility of the pulsed EPR technique in generating field-swept EPR spectra, as well as some of the distorting effects that are peculiar to the pulsed detection method. The application of this technique to Cr 3+ -doped ZBLAN reveals that much of the broad resonance extending from g eff =5.1 to g eff =1.97, characteristic of X-band continuous wave EPR of Cr 3+ in glasses, is absent. We attribute this largely to the variation in nutation frequencies across the spectrum that result from sites possessing large fine structure interactions. The description of the spin dynamics of such sites is complicated and we discuss some possible approaches to the simulation of the pulsed EPR spectra. (author)

  7. Influence of Sc doping concentration on electronic structure and optical properties of ZnO

    International Nuclear Information System (INIS)

    Wu Yuxi; Zhang Hao; Han Long; Qu Licheng; Gu Shulin; Li Teng

    2011-01-01

    In this paper, we adopt the density functional theory (DFT) plane wave pseudopotential method to study the crystal structure, electronic structure and optical property for the different concentrations of Sc doped ZnO system. We optimize the structure of Sc and get the basis of numerical simulation. The results show that with the adoption of Sc, the lattice constants of the system increase gradually, the energy of the system becomes larger, the Fermi level enters into the conduction band, the system shows Metallic gradually and the band gap becomes wider. On the other hand, certain changes of the optical properties of doped ZnO have taken place, i. e., a new absorption peak happens in ZnO absorption spectrum and the blue shift of absorption edge with the new peak occurs in the imagery part of dielectric function. (authors)

  8. Electronic structure and magnetic properties of Sc doped EuO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Reisner, Andreas; Altendorf, Simone; Chang, Chun-Fu; Tjeng, Liu Hao [Max-Planck-Institute for Chemical Physics of Solids, Noethnitzer Str.40, 01187 Dresden (Germany); Lin, Hong-Ji; Chen, Chien-Te [National Synchrotron Radiation Research Center, Hsin-Ann Road, 30076 Hsinchu, Taiwan (China)

    2013-07-01

    Europium monoxide is a ferromagnetic semiconductor with a Curie temperature T{sub C} of 69 K. Upon doping the material can show an increase of the Curie temperature, a metal-to-insulator transition and a high spin polarization of the charge carriers. Applying pressure can also enhance T{sub C}. Mostly other trivalent rare earth metals are used as dopant. Here we set out to explore the possibility of using transition metals as dopants. As a start we focus on the non magnetic Sc ions. We are able to achieve excellent crystalline growth of Sc-doped EuO thin films on YSZ (001) substrates using molecular beam epitaxy. We report our results on the crystal structure as characterized by RHEED and LEED, the electronic structure as determined by XPS and ARPES, and on the magnetic properties as measured by SQUID.

  9. Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide

    OpenAIRE

    K?nig, Dirk; Hiller, Daniel; Gutsch, Sebastian; Zacharias, Margit; Smith, Sean

    2017-01-01

    All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer from effects that impede conventional doping due to fundamental physical principles such as out-diffusi...

  10. Moessbauer Studies of Implanted Impurities in Solids

    CERN Multimedia

    2002-01-01

    Moessbauer studies were performed on implanted radioactive impurities in semiconductors and metals. Radioactive isotopes (from the ISOLDE facility) decaying to a Moessbauer isotope were utilized to investigate electronic and vibrational properties of impurities and impurity-defect structures. This information is inferred from the measured impurity hyperfine interactions and Debye-Waller factor. In semiconductors isoelectronic, shallow and deep level impurities have been implanted. Complex impurity defects have been produced by the implantation process (correlated damage) or by recoil effects from the nuclear decay in both semiconductors and metals. Annealing mechanisms of the defects have been studied. \\\\ \\\\ In silicon amorphised implanted layers have been recrystallized epitaxially by rapid-thermal-annealing techniques yielding highly supersaturated, electrically-active donor concentrations. Their dissolution and migration mechanisms have been investigated in detail. The electronic configuration of Sb donors...

  11. Oxygen effects on the interfacial electronic structure of titanyl phthalocyanine film: p-Type doping, band bending and Fermi level alignment

    International Nuclear Information System (INIS)

    Nishi, Toshio; Kanai, Kaname; Ouchi, Yukio; Willis, Martin R.; Seki, Kazuhiko

    2006-01-01

    The effect of oxygen doping on titanyl phthalocyanine (TiOPc) film was investigated by ultraviolet photoelectron spectroscopy (UPS). The electronic structure of the interface formed between TiOPc films deposited on highly oriented pyrolytic graphite (HOPG) was clearly different between the films prepared in ultrahigh vacuum (UHV) and under O 2 atmosphere (1.3 x 10 -2 Pa). The film deposited in UHV showed downward band bending characteristic of n-type semiconductor, possibly due to residual impurities working as unintentional n-type dopants. On the other hand, the film deposited under O 2 atmosphere showed upward band bending characteristic of p-type semiconductor. Such trends, including the conversion from n- to p-type, are in excellent correspondence with reported field effect transistor characteristics of TiOPc, and clearly demonstrates that bulk TiOPc film was p-doped with oxygen. In order to examine the Fermi level alignment between TiOPc film and the substrate, the energy of the highest occupied molecular orbital (HOMO) of TiOPc relative to the Fermi level of the conductive substrate was determined for various substrates. The alignment between the Fermi level of conductive substrate and Fermi level of TiOPc film at fixed energy in the bandgap was not observed for the TiOPc film prepared in UHV, possibly because of insufficient charge density in the TiOPc film. This situation was drastically changed when the TiOPc film exposed to O 2 , and clear alignment of the Fermi level fixed at 0.6 eV above the HOMO with the Fermi level of the conducting substrate was observed, probably by p-type doping effect of oxygen. These are the first direct and quantitative information about bulk oxygen doping from the viewpoint of the electronic structure. These results suggest that similar band bending with Fermi level alignment may be also achieved for other organic semiconductors under practical device conditions, and also call for caution at the comparison of experimental

  12. Cr{sup 3+} in layered perovskites: do the electron paramagnetic resonance parameters only depend on the impurity-ligand distances?

    Energy Technology Data Exchange (ETDEWEB)

    Garcia-Lastra, J M [Nano-Bio Spectroscopy Group and European Theoretical Spectroscopy Facility (ETSF), Departamento Fisica de Materiales UPV/EHU, Apartado 1072, 20018 San Sebastian (Spain); Barriuso, M T [Departamento de Fisica Moderna, Universidad de Cantabria, E-39005 Santander (Spain); Aramburu, J A; Moreno, M, E-mail: scpgalaj@ehu.e [Departamento de Ciencias de la Tierra y Fisica de la Materia Condensada, Universidad de Cantabria, E-39005 Santander (Spain)

    2010-04-21

    The actual value of axial, R{sub ax}, and equatorial, R{sub eq}, impurity-ligand distances for Cr{sup 3+} embedded in tetragonal K{sub 2}MgX{sub 4} (X = F, Cl) lattices has been explored by means of density functional theory (DFT) calculations on clusters involving up to 69 ions using two different functionals. For K{sub 2}MgF{sub 4}:Cr{sup 3+} R{sub eq} and R{sub ax} are found to be coincident within only 0.5 pm. When the g tensor of K{sub 2}MgF{sub 4}:Cr{sup 3+} is derived considering only the CrF{sub 6}{sup 3-} unit in vacuo at the calculated equilibrium geometry the g{sub perpendicular}-g{sub ||} quantity fails to reproduce the experimental value by one order of magnitude. In contrast, when the active electrons localized in the CrX{sub 6}{sup 3-} complex (X = F, Cl) are allowed to feel the anisotropic electric field coming from the rest of the lattice ions the splitting in the first excited state, {sup 4}T{sub 2}, increases by one order of magnitude. The present results thus show that the g tensor anisotropy and the zero-field splitting constant, D, observed for K{sub 2}MgX{sub 4}:Cr{sup 3+} (X = F, Cl) are not mainly due to a local deformation of the CrX{sub 6}{sup 3-} octahedron but to the action of the internal electric field, often ignored when seeking the microscopic origin of electronic properties due to impurities in insulating lattices. Accordingly, serious doubts on the validity of the superposition model are cast by the present work.

  13. Fabrication of Eu doped CdO [Al/Eu-nCdO/p-Si/Al] photodiodes by perfume atomizer based spray technique for opto-electronic applications

    Science.gov (United States)

    Ravikumar, M.; Ganesh, V.; Shkir, Mohd; Chandramohan, R.; Arun Kumar, K. Deva; Valanarasu, S.; Kathalingam, A.; AlFaify, S.

    2018-05-01

    In this study, thin films of cadmium oxide (CdO) with different concentrations (0, 1, 3, and 5 wt%) of Eu doping were deposited onto Si and glass substrates by a novel and facile spray technique using simple perfume atomizer for the first time. Prepared films were characterized for structural, morphological, optical properties and the photo diode studies, using X-ray diffraction, scanning electron microscope, UV-Vis spectrophotometer, Isbnd V characteristics, and fundamental parameters are reported. All the prepared Eu:CdO films exhibit cubic structure. The preferential orientation is along (200) plane. Scanning electron microscopy study indicates the growth of smooth and pin-hole free films with clusters of homogeneous grains. The values of band gap energy are found to be varying from 2.42 to 2.33 eV for various Eu doping concentration from 0 to 5 wt%. EDAX studies revealed the presence of Eu, Cd and O elements without any other impurities. FTIR spectra showed a peak at 575 cm-1 confirming the stretching mode of Cdsbnd O. The resistivity (ρ), high carrier concentration (n) and carrier mobility (μ) for 3 wt% CdO thin film are found to be 0.452 × 10-3(Ω.cm), 17.82 × 1020 cm-3 and 7.757 cm2/V, respectively. Current-voltage measurements on the fabricated nanostructured Al/Eu-nCdO/p-Si/Al heterojunction device showed a non-linear electric characteristics indicating diode like behaviour.

  14. First-Principle Predictions of Electronic Properties and Half-Metallic Ferromagnetism in Vanadium-Doped Rock-Salt SrO

    Science.gov (United States)

    Berber, Mohamed; Doumi, Bendouma; Mokaddem, Allel; Mogulkoc, Yesim; Sayede, Adlane; Tadjer, Abdelkader

    2018-01-01

    We have used first-principle methods of density functional theory within the full potential linearized augmented plane wave scheme to investigate the electronic and magnetic properties of cubic rock-salt, SrO, doped with vanadium (V) impurity as Sr1- x V x O at various concentrations, x = 0.25, 0.5, and 0.75. We have found that the ferromagnetic state arrangement of Sr1- x V x O is more stable compared to the anti-ferromagnetic state configuration. The electronic structures have a half-metallic (HM) ferromagnetic (F) behavior for Sr0.75V0.25O and Sr0.5V0.5O. This feature results from the metallic and semiconducting natures of majority-spin and minority-spin bands, respectively. The HMF gap decreases with the increasing concentration of vanadium atoms due to the broadening of 3 d (V) levels in the gap, and hence the Sr0.25V0.75O becomes metallic ferromagnetic. The Sr0.75V0.25O revealed a large HM gap with spin polarization of 100%. The Sr1- x V x O compound at low concentrations seems a better candidate to explore the half-metallicity for practical spintronics applications.

  15. Lithium doping and vacancy effects on the structural, electronic and magnetic properties of hexagonal boron nitride sheet: A first-principles calculation

    Science.gov (United States)

    Fartab, Dorsa S.; Kordbacheh, Amirhossein Ahmadkhan

    2018-06-01

    The first-principles calculations based on spin-polarized density functional theory is carried out to investigate the structural, electronic and magnetic properties of a hexagonal boron nitride sheet (h-BNS) doped by one or two lithium atom(s). Moreover, a vacancy in the neighborhood of one Li-substituted atom is introduced into the system. All optimized structures indicate significant local deformations with Li atom(s) protruded to the exterior of the sheet. The defects considered at N site are energetically more favorable than their counterpart structures at B site. The spin-polarized impurity states appear within the bandgap region of the pristine h-BNS, which lead to a spontaneous magnetization with the largest magnetic moments of about 2 μB in where a single or two B atom(s) are replaced by Li atom(s). Furthermore, the Li substitution for a single B atom increases the density of holes compared to that of electrons forming a p-type semiconductor. More interestingly, the structure in which two Li are substituted two neighboring B atoms appears to show desired half-metallic behavior that may be applicable in spintronic. The results provide a way to enhance the conductivity and magnetism of the pristine h-BNS for potential applications in BN-based nanoscale devices.

  16. Electronic states of a hydrogenic impurity in a zinc-blende GaN/AlGaN quantum well

    International Nuclear Information System (INIS)

    Pattammal, M.; Peter, A. John

    2010-01-01

    Binding energies of ground and a few low lying excited states of a hydrogenic donor confined in a zinc-blende GaN/AlGaN quantum well are investigated. They are computed within the framework of single band effective mass approximation, by means of a variational approach. The donor states are investigated with the various impurity positions as a function of well width. The calculations have been carried out with the inclusion of conduction band non-parabolicity through the energy dependent effective mass. The variational solutions have been improved by using a two-parametric trial wavefunction. The results seem better and good agreement with the other investigators. To support our results, we observe that the values of variational parameters are consistent when two parameter wave function is used. We find that the inclusion of non-parabolic effects leads to more binding for all the values of well width and is significant for narrow wells. The results are compared with the existing available literature.

  17. Electronic states of a hydrogenic impurity in a zinc-blende GaN/AlGaN quantum well

    Energy Technology Data Exchange (ETDEWEB)

    Pattammal, M. [Dept.of Physics, Yadava College Coeducational Institute, Madurai 625 014 (India); Peter, A. John, E-mail: a.john.peter@gmail.com [Dept.of Physics, Govt. Arts and Science College, Melur 625 106 (India)

    2010-09-01

    Binding energies of ground and a few low lying excited states of a hydrogenic donor confined in a zinc-blende GaN/AlGaN quantum well are investigated. They are computed within the framework of single band effective mass approximation, by means of a variational approach. The donor states are investigated with the various impurity positions as a function of well width. The calculations have been carried out with the inclusion of conduction band non-parabolicity through the energy dependent effective mass. The variational solutions have been improved by using a two-parametric trial wavefunction. The results seem better and good agreement with the other investigators. To support our results, we observe that the values of variational parameters are consistent when two parameter wave function is used. We find that the inclusion of non-parabolic effects leads to more binding for all the values of well width and is significant for narrow wells. The results are compared with the existing available literature.

  18. Instability of homogeneous distribution of charged substitutional impurity in semiconductors

    International Nuclear Information System (INIS)

    Vasilevskij, M.I.; Ershov, S.N.; Panteleev, V.A.

    1985-01-01

    A mechanism is suggested of instability of uniform impurity distribution in a semiconductor. The mechanism is associated with the vacancy wind effect and deflection from local neutrality in case of impurity concentration fluctuation occurrence. It is shown that the mechanism can be realized by irradiation of silicon doped with group-3 and group 5 elements

  19. Evolution of magnetic and superconducting fluctuations with doping of high-Tc superconductors. An electronic Raman scattering study

    International Nuclear Information System (INIS)

    Blumberg, G.

    1998-01-01

    For YBa 2 Cu 3 O 6+δ and Bi 2 Sr 2 CaCu 2 O 3±δ superconductors, electronic Raman scattering from high- and low-energy excitations has been studied in relation to the hole doping level, temperature, and energy of the incident photons. For underdoped superconductors, it is concluded that short range antiferromagnetic (AF) correlations persist with hole doping and doped single holes are incoherent in the AF environment. Above the superconducting (SC) transition temperature T c the system exhibits a sharp Raman resonance of B 1g symmetry and about 75 meV energy and a pseudogap for electron-hole excitations below 75 meV, a manifestation of a partially coherent state forming from doped incoherent quasi-particles. The occupancy of the coherent state increases with cooling until phase ordering at T c produces a global SC state

  20. Mechanical properties and electronic structure of edge-doped graphene nanoribbons with F, O, and Cl atoms.

    Science.gov (United States)

    Piriz, Sebastián; Fernández-Werner, Luciana; Pardo, Helena; Jasen, Paula; Faccio, Ricardo; Mombrú, Álvaro W

    2017-08-16

    In this study, we present the structural, electronic, and mechanical properties of edge-doped zigzag graphene nanoribbons (ZGNRs) doped with fluorine, oxygen, and chlorine atoms. To the best of our knowledge, to date, no experimental results concerning the mechanical properties of graphene-derived nanoribbons have been reported in the literature. Simulations indicate that Cl- and F-doped ZGNRs present an equivalent 2-dimensional Young's modulus E 2D , which seems to be higher than those of graphene and H-doped ZGNRs. This is a consequence of the electronic structure of the system, particularly originating from strong interactions between the dopant atoms localized at the edges. The interaction between dopant atoms located at the edges is higher for Cl and lower for F and O atoms. This is the origin of the observed trend, in which E > E > E for all the analyzed ZGNRs.

  1. Implications of orbital hybridization on the electronic properties of doped quantum dots: the case of Cu:CdSe

    Energy Technology Data Exchange (ETDEWEB)

    Wright, Joshua T.; Forsythe, Kyle; Hutchins, Jamie; Meulenberg, Robert W.

    2016-04-13

    This paper investigates how chemical dopants affect the electronic properties of CdSe quantum dots (QDs) and why a model that incorporates the concepts of orbital hybridization must be used to understand these properties. Extended X-ray absorption fine structure spectroscopy measurements show that copper dopants in CdSe QDs occur primarily through a statistical doping mechanism. Ultraviolet photoemission spectroscopy (UPS) experiments provide a detailed insight on the valence band (VB) structure of doped and undoped QDs. Using UPS measurements, we are able to observe photoemission from the Cu d-levels above VB maximum of the QDs which allows a complete picture of the energy band landscape of these materials. This information provides insights into many of the physical properties of doped QDs, including the highly debated near-infrared photoluminescence in Cu doped CdSe QDs. We show that all our results point to a common theme of orbital hybridization in Cu doped CdSe QDs which leads to optically and electronically active states below the conduction band minimum. Our model is supported from current–voltage measurements of doped and undoped materials, which exhibit Schottky to Ohmic behavior with Cu doping, suggestive of a tuning of the lowest energy states near the Fermi level.

  2. Ab-initio molecular dynamics studies of magnesium-doped sodium clusters

    International Nuclear Information System (INIS)

    Roethlisberger, U.; Andreoni, W.

    1993-01-01

    Structural, electronic, and vibrational properties of magnesium-doped sodium clusters have been determined using the Car-Parrinello method. It is found that in the energetically preferred structures the magnesium impurity never is located at the centre of the cluster. The validity of spherical jellium models and the effects of temperature are discussed. 9 refs, 3 figs, 1 tab

  3. Al-doped MgB{sub 2} materials studied using electron paramagnetic resonance and Raman spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Bateni, Ali; Somer, Mehmet, E-mail: emre.erdem@physchem.uni-freiburg.de, E-mail: msomer@ku.edu.tr [Department of Chemistry, Koç University, Rumelifeneri Yolu, Sariyer, Istanbul (Turkey); Erdem, Emre, E-mail: emre.erdem@physchem.uni-freiburg.de, E-mail: msomer@ku.edu.tr; Repp, Sergej [Institut für Physikalische Chemie, Universität Freiburg, Albertstr. 21, Freiburg (Germany); Weber, Stefan [Institut für Physikalische Chemie, Universität Freiburg, Albertstr. 21, Freiburg (Germany); Freiburg Institute for Advanced Studies (FRIAS), Universität Freiburg, Albertstr. 19, Freiburg (Germany)

    2016-05-16

    Undoped and aluminum (Al) doped magnesium diboride (MgB{sub 2}) samples were synthesized using a high-temperature solid-state synthesis method. The microscopic defect structures of Al-doped MgB{sub 2} samples were systematically investigated using X-ray powder diffraction, Raman spectroscopy, and electron paramagnetic resonance. It was found that Mg-vacancies are responsible for defect-induced peculiarities in MgB{sub 2}. Above a certain level of Al doping, enhanced conductive properties of MgB{sub 2} disappear due to filling of vacancies or trapping of Al in Mg-related vacancy sites.

  4. Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures

    International Nuclear Information System (INIS)

    Egorov, A. Yu.; Gladyshev, A. G.; Nikitina, E. V.; Denisov, D. V.; Polyakov, N. K.; Pirogov, E. V.; Gorbazevich, A. A.

    2010-01-01

    Double pulse doped (δ-doped) InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) heterostructures were grown by molecular-beam epitaxy using a multiwafer technological system. The room-temperature electron mobility was determined by the Hall method as 6550 and 6000 cm 2 /(V s) at sheet electron densities of 3.00 x 10 12 and 3.36 x 10 12 cm -2 , respectively. HEMT heterostructures fabricated in a single process feature high uniformity of structural and electrical characteristics over the entire area of wafers 76.2 mm in diameter and high reproducibility of characteristics from process to process.

  5. Radiative recombination in doped indium phosphide crystals

    International Nuclear Information System (INIS)

    Negreskul, V.V.; Russu, E.V.; Radautsan, S.I.; Cheban, A.G.; AN Moldavskoj SSR, Kishinev. Inst. Prikladnoj Fiziki)

    1975-01-01

    Photoluminiscence spectra of nondoped n-InP and their change upon doping with silicon, cadmium, zinc and copper impurities were studied. The shortest wave band at 1.41 eV is connected with radiative electron transition from a shallow donor level (probably silicon) to valent zone, while the band with maximum at 1.37 - 1.39 eV is due to radiative electron transition to an acceptor level whose energy depends upon the nature and concentration of impurity implanted. The luminescence of Light-doped p-InP crystals enables to estimate the ionization energies of acceptor levels in cadmium (Esub(a)=0.043 eV) and zinc (Esub(a)=0.027 eV). Energies of acceptor levels (0.22 and 0.40 eV) due to copper impurity are determined. Intensity of edge emission in the specimens light-doped with silicon is higher than in the nondoped n-InP crystals

  6. Exciton-dopant and exciton-charge interactions in electronically doped OLEDs

    International Nuclear Information System (INIS)

    Williams, Christopher; Lee, Sergey; Ferraris, John; Zakhidov, A. Anvar

    2004-01-01

    The electronic dopants, like tetrafluorocyanoquinodimethane (F 4 -TCNQ) molecules, used for p-doping of hole transport layers in organic light-emitting diodes (OLEDs) are found to quench the electroluminescence (EL) if they diffuse into the emissive layer. We observed EL quenching in OLED with F 4 -TCNQ doped N,N'-diphenyl-N'N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine hole transport layer at large dopant concentrations, >5%. To separate the effects of exciton-dopant quenching, from exciton-polaron quenching we have intentionally doped the emissive layer of (8-tris-hydroxyquinoline) with three acceptors (A) of different electron affinities: F 4 -TCNQ, TCNQ, and C 60 , and found that C 60 is the strongest EL-quencher, while F 4 -TCNQ is the weakest, contrary to intuitive expectations. The new effects of charge transfer and usually considered energy transfer from exciton to neutral (A) and charged acceptors (A - ) are compared as channels for non-radiative Ex-A decay. At high current loads the EL quenching is observed, which is due to decay of Ex on free charge carriers, hole polarons P + . We consider contributions to Ex-P + interaction by short-range charge transfer and describe the structure of microscopic charge transfer (CT)-processes responsible for it. The formation of metastable states of 'charged excitons' (predicted and studied by Agranovich et al. Chem. Phys. 272 (2001) 159) by electron transfer from a P to an Ex is pointed out, and ways to suppress non-radiative Ex-P decay are suggested

  7. Optical Analysis of Iron-Doped Lead Sulfide Thin Films for Opto-Electronic Applications

    Science.gov (United States)

    Chidambara Kumar, K. N.; Khadeer Pasha, S. K.; Deshmukh, Kalim; Chidambaram, K.; Shakil Muhammad, G.

    Iron-doped lead sulfide thin films were deposited on glass substrates using successive ionic layer adsorption and reaction method (SILAR) at room temperature. The X-ray diffraction pattern of the film shows a well formed crystalline thin film with face-centered cubic structure along the preferential orientation (1 1 1). The lattice constant is determined using Nelson Riley plots. Using X-ray broadening, the crystallite size is determined by Scherrer formula. Morphology of the thin film was studied using a scanning electron microscope. The optical properties of the film were investigated using a UV-vis spectrophotometer. We observed an increase in the optical band gap from 2.45 to 3.03eV after doping iron in the lead sulfide thin film. The cutoff wavelength lies in the visible region, and hence the grown thin films can be used for optoelectronic and sensor applications. The results from the photoluminescence study show the emission at 500-720nm. The vibrating sample magnetometer measurements confirmed that the lead sulfide thin film becomes weakly ferromagnetic material after doping with iron.

  8. Electron transfer at boron-doped diamond electrodes modified by graphitic micro-domains

    Energy Technology Data Exchange (ETDEWEB)

    Mahe, E.; Devilliers, D. [Pierre et Marie Curie Univ., Paris (France). Electrochemistry Lab.; Comninellis, C. [Lausanne Ecole Polytechnique, Lausanne (Switzerland). Groupe de Genie Electrochimique

    2006-07-01

    Boron-doped (BDD) electrodes have been used in electrolysis procedures for the last 10 years. The mechanical stability of the electrode, its large electrochemical window and its low capacitive current place this new electrode material as an alternative for replacing more costly or toxic materials such as mercury. However, the ferri/ferrocyanide system of boron-doped electrodes has shown contradictory results in the literature. This study proposed a cathodic pre-treatment which relied on the presence of residual graphitic domains formed during the preparation of the BDD film. An experiment was conducted in which the doping procedure was used to control the amount of graphitic phase on the electrode with highly oriented pyrolytic graphite (HOPG) grafted on the BDD surface. Surface characterization with Raman spectroscopy and Scanning Electron Microscopy (SEM) was then carried out using cyclic voltammetry and electrochemical impedance spectroscopy. The electroanalytical determination of the amount of graphitic micro-domains was described and a pulse procedure was proposed which obtained a reproducible surface state. 2 refs., 2 figs.

  9. Observation of an electron band above the Fermi level in FeTe0.55Se0.45 from in-situ surface doping

    International Nuclear Information System (INIS)

    Zhang, P.; Ma, J.; Qian, T.; Richard, P.; Ding, H.; Xu, N.; Xu, Y.-M.; Fedorov, A. V.; Denlinger, J. D.; Gu, G. D.

    2014-01-01

    We used in-situ potassium (K) evaporation to dope the surface of the iron-based superconductor FeTe 0.55 Se 0.45 . The systematic study of the bands near the Fermi level confirms that electrons are doped into the system, allowing us to tune the Fermi level of this material and to access otherwise unoccupied electronic states. In particular, we observe an electron band located above the Fermi level before doping that shares similarities with a small three-dimensional pocket observed in the cousin, heavily electron-doped KFe 2−x Se 2 compound.

  10. Effect of Sr-doping of LaMnO3 spacer on modulation-doped two-dimensional electron gases at oxide interfaces

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Gan, Yulin; Christensen, Dennis Valbjørn

    2017-01-01

    Modulation-doped oxide two-dimensional electron gas formed at the LaMnO3 (LMO) buffered disorderd-LaAlO3/SrTiO3 (d-LAO/LMO/STO) heterointerface provides new opportunities for electronics as well as quantum physics. Herein, we studied the dependence of Sr-doping of La1-xSrxMnO3 (LSMO, x = 0, 1/8, ...... of LSMO during the deposition of disordered LAO or that the energy levels of Mn 3d electrons at the interface of LSMO/STO are hardly varied even when changing the LSMO composition from LMO to SrMnO3....

  11. Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface

    DEFF Research Database (Denmark)

    Andresen, S.E.; Sørensen, B.S.; Lindelof, P.E.

    2003-01-01

    Spin-polarized electron coupling across a Si delta-doped GaMnAs/n-GaAs interface was investigated. The injection of spin-polarized electrons was detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode. The angular momentum selection rules were simplified...

  12. Direct Detection and Imaging of Low-Energy Electrons with Delta-Doped Charge-Coupled Devices

    Science.gov (United States)

    Nikzad, S.; Yu, Q.; Smith, A. L.; Jones, T. J.; Tombrello, T. A.; Elliott, S. T.

    1998-01-01

    We report the use fo delta-doped charge-coupled devices (CCDs) for direct detection of electrons in the 50-1500 eV energy range. These are the first measurements with a solid state device to detect electrons in this energy range.

  13. Negligible Electronic Interaction between Photoexcited Electron-Hole Pairs and Free Electrons in Phosphorus-Boron Co-Doped Silicon Nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Limpens, Rens [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Neale, Nathan R [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Fujii, Minoru [Kobe University; Gregorkiewicz, Tom [University of Amsterdam

    2018-03-05

    Phosphorus (P) and boron (B) co-doped Si nanocrystals (NCs) have raised interest in the optoelectronic industry due to their electronic tunability, optimal carrier multiplication properties, and straightforward dispersibility in polar solvents. Yet a basic understanding of the interaction of photoexcited electron-hole (e-h) pairs with new physical features that are introduced by the co-doping process (free carriers, defect states, and surface chemistry) is missing. Here, we present the first study of the ultrafast carrier dynamics in SiO2-embedded P-B co-doped Si NC ensembles using induced absorption spectroscopy through a two-step approach. First, the induced absorption data show that the large fraction of the dopants residing on the NC surface slows down carrier relaxation dynamics within the first 20 ps relative to intrinsic (undoped) Si NCs, which we interpret as enhanced surface passivation. On longer time-scales (picosecond to nanosecond regime), we observe a speeding up of the carrier relaxation dynamics and ascribe it to doping-induced trap states. This argument is deduced from the second part of the study, where we investigate multiexciton interactions. From a stochastic modeling approach we show that localized carriers, which are introduced by the P or B dopants, have minor electronic interactions with the photoexcited e-h pairs. This is understood in light of the strong localization of the introduced carriers on their original P- or B-dopant atoms, due to the strong quantum confinement regime in these relatively small NCs (<6 nm).

  14. Evaluating of electronic structure of Lanthanum chromite under doping of divalent ion using density functional theory

    International Nuclear Information System (INIS)

    Saievar, E.; Gharleghi, A.

    2006-01-01

    Doping Calcium in Lanthanum site of LaCrO 3 compound increasing the density of states in valance band and decreasing the band gap width because of increases of S electrons in valance band and variety of interaction energies from Cr +3 -Cr +4 couple in valance band. We have used Wien2k software for evaluating this mechanisms. Using of 0.25 percent of dopant and a kind of the space group of cell, let us to use one cell in calculations. We have used GGA approximation in this calculations.

  15. Electronic and magnetic properties of TiO2 (co)-doped with (V, Mn)

    Science.gov (United States)

    Rami, R.; Rkhioui, N.; Ahl Laamara, R.; Drissi, L. B.

    2017-12-01

    The effect of dopage and co-dopage with vanadium and manganese on the structural, the electronic and the magnetic properties of TiO2 is studied using ab initio calculations. The calculations are based on the Korringa-Kohn-Rostoker method combined with the coherent potential approach, employing the local density approximation (LDA). The density of states are plotted in the energy diagram for different concentrations of dopants. The magnetic moments and half-metallic character of the doped compounds are investigated and the mechanism of exchange interaction is determined. In addition, the Curie temperature is given for different concentrations.

  16. Stability and electronic properties of oxygen-doped ZnS polytypes: DFTB study

    Science.gov (United States)

    Popov, Ilya S.; Vorokh, Andrey S.; Enyashin, Andrey N.

    2018-06-01

    Synthesis from aqueous solutions is an affordable method for fabrication of II-VI semiconductors. However, application of this method often imposes a disorder of crystal lattice, manifesting as a rich variety of polytypes arising from wurtzite and zinc blende phases. The origin of this disordering still remains debatable. Here, the influence of the most likely impurity at water environment - substitutional oxygen - on the polytypic equilibrium of zinc sulphide is studied by means of density-functional tight-binding method. According to calculations, the inclusion of such oxygen does not affect the polytypic equilibrium. Apart of thermodynamic stability, the electronic and elastic properties of ZnS polytypes are studied as the function of oxygen distribution.

  17. Effect of 60Co γ-irradiation on the nature of electronic transport in heavily doped n-type GaN based Schottky photodetectors

    Science.gov (United States)

    Chatterjee, Abhishek; Khamari, Shailesh K.; Porwal, S.; Kher, S.; Sharma, T. K.

    2018-04-01

    GaN Schottky photodetectors are fabricated on heavily doped n-type GaN epitaxial layers grown by the hydride vapour phase epitaxy technique. The effect of 60Co γ-radiation on the electronic transport in GaN epilayers and Schottky detectors is studied. In contrast to earlier observations, a steady rise in the carrier concentration with increasing irradiation dose is clearly seen. By considering a two layer model, the contribution of interfacial dislocations in carrier transport is isolated from that of the bulk layer for both the pristine and irradiated samples. The bulk carrier concentration is fitted by using the charge balance equation which indicates that no new electrically active defects are generated by γ-radiation even at 500 kGy dose. The irradiation induced rise in the bulk carrier concentration is attributed to the activation of native Si impurities that are already present in an electrically inert form in the pristine sample. Further, the rise in interfacial contribution in the carrier concentration is governed by the enhanced rate of formation of nitrogen vacancies by irradiation, which leads to a larger diffusion of oxygen impurities. A large value of the characteristic tunnelling energy for both the pristine and irradiated Au/Ni/GaN Schottky devices confirms that the dislocation-assisted tunnelling dominates the low temperature current transport even after irradiation. The advantage of higher displacement energy and larger bandgap of GaN as compared to GaAs is evident from the change in leakage current after irradiation. Further, a fast recovery of the photoresponse of GaN photodetectors after irradiation signifies their compatibility to operate in high radiation zones. The results presented here are found to be crucial in understanding the interaction of 60Co γ-irradiation with n+-GaN epilayers.

  18. Electronic structures of B 2p and C 2p levels in boron-doped diamond films studied using soft x-ray absorption and emission spectroscopy

    Science.gov (United States)

    Nakamura, Jin; Kabasawa, Eiki; Yamada, Nobuyoshi; Einaga, Yasuaki; Saito, Daisuke; Isshiki, Hideo; Yugo, Shigemi; Perera, Rupert C. C.

    2004-12-01

    X-ray absorption (XAS) and emission (XES) spectroscopy near B K and C K edges have been performed on metallic ( ˜0.1at.% B, B-diamond) and semiconducting ( ˜0.03at.% B and N, BN-diamond) doped diamond films. Both B K XAS and XES spectra show a metallic partial density of states (PDOS) with the Fermi energy of 185.3eV , and there is no apparent boron-concentration dependence in contrast to the different electric property. In C K XAS spectrum of B-diamond, the impurity state ascribed to boron is clearly observed near the Fermi level. The Fermi energy is found to be almost same with the top of the valence band of nondoped diamond: EV=283.9eV . C K XAS of BN-diamond shows both the B-induced shallow level and N-induced deep and broad levels as the in-gap states, in which the shallow level is in good agreement with the activation energy (Ea=0.37eV) estimated from the temperature dependence of the conductivity; namely, the change in C2p PDOS of impurity-induced metallization is directly observed. The electric property of this diamond is ascribed mainly to the electronic structure of C2p near the Fermi level. The observed XES spectra are compared with the discrete variational Xα ( DVXα ) cluster calculation. The DVXα result supports the strong hybridization between B2p and C2p observed in XAS and XES spectra, and suggests that the small amount of boron (⩽0.1at.%) in diamond occupies the substitutional site rather than interstitial site.

  19. Doping of Ga in antiferromagnetic semiconductor α-Cr2O3 and its effects on magnetic and electronic properties

    Science.gov (United States)

    Bhowmik, R. N.; Venkata Siva, K.; Ranganathan, R.; Mazumdar, Chandan

    2017-06-01

    The samples of Ga-doped Cr2O3 have been prepared using chemical co-precipitation route. X-ray diffraction pattern and Raman spectra have indicated rhombohedral crystal structure with space group R 3 bar C. Magnetic measurements indicated diluted antiferromagnetic (AFM) spin order in Ga-doped α-Cr2O3 and ferrimagnetic ordering of spins at about 50-60 K is confirmed from the analysis of the temperature dependence of dc magnetization and ac susceptibility data. Apart from magnetic dilution effect, the samples have shown superparamagnetic behavior below 50 K due to frustrated surface spins of the nano-sized grains. The samples have shown non-linear electronic properties. The current-voltage (I-V) characteristics of the Ga-doped α-Cr2O3 samples are remarkably different from α-Cr2O3 sample. The bi-stable electronic states and negative differential resistance are some of the unique non-linear electronic properties that the I-V curves of Ga-doped samples have exhibited. Optical study revealed three electronic transitions in the samples associated with band gap energy at about 2.67-2.81 eV, 1.91-2.11 eV, 1.28-1.35 eV, respectively. The results indicated multi-level electronic structure in Ga-doped α-Cr2O3 system.

  20. Effect of impurities and processing on silicon solar cells. Volume 1: Characterization methods for impurities in silicon and impurity effects data base

    Science.gov (United States)

    Hopkins, R. H.; Davis, J. R.; Rohatgi, A.; Campbell, R. B.; Blais, P. D.; Rai-Choudhury, P.; Stapleton, R. E.; Mollenkopf, H. C.; Mccormick, J. R.

    1980-01-01

    Two major topics are treated: methods to measure and evaluate impurity effects in silicon and comprehensive tabulations of data derived during the study. Discussions of deep level spectroscopy, detailed dark I-V measurements, recombination lifetime determination, scanned laser photo-response, conventional solar cell I-V techniques, and descriptions of silicon chemical analysis are presented and discussed. The tabulated data include lists of impurity segregation coefficients, ingot impurity analyses and estimated concentrations, typical deep level impurity spectra, photoconductive and open circuit decay lifetimes for individual metal-doped ingots, and a complete tabulation of the cell I-V characteristics of nearly 200 ingots.

  1. Magnetic and electron spin resonance studies of W doped CoFe2O4 polycrystalline materials

    Science.gov (United States)

    Singamaneni, S. R.; Martinez, L. M.; Swadipta, R.; Ramana, C. V.

    2018-05-01

    We report the magnetic and electron spin resonance (ESR) properties of W doped CoFe2O4 polycrystalline materials, prepared by standard solid-state reaction method. W was doped (0-15%) in CFO lattice on Fe site. Isothermal magnetization measurements reveal that the coercive field (Hc) (1300-2200 Oe) and saturation magnetization MS (35-82 emu/g) vary strongly as a function of W doping at all the temperatures (4-300 K) measured. We believe that a strong decrease in magnetic anisotropy in CFO after doping with W could cause a decrease in Hc. Up on doping CFO with W in place of Fe, the process transforms part of Fe3+ into Fe2+ due to the creation of more oxygen vacancies. This hinders the super-exchange interaction between Fe3+ and Fe2+, which causes a decrease in MS. Zero-field cooled (ZFC) and field cooled (FC, 1000 Oe) magnetization responses measured at 4 K on 1% W doped CFO show no indication of exchange bias, inferring that there are no other microscopic secondary magnetic phases (no segregation). This observation is corroborated by ESR (9.398 GHz) measurements collected as a function of temperature (10-150 K) and W doping (0-15%). We find that ESR spectra did not change after doping with W above 0.5%. However, ESR spectra collected from 0.5% W doped CFO sample showed a strong temperature dependence. We observed several ESR signals from 0.5% W doped CFO sample that could be due to phase separation.

  2. Theoretical perspective on the electronic, magnetic and optical properties of Zn-doped monolayer SnS{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Lili; Zhou, Wei; Liu, Yanyu; Yu, Dandan [Department of Applied Physics, Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Faculty of Science, Tianjin University, Tianjin 300072 (China); Liang, Yinghua [College of Chemical Engineering, North China University of Science and Technology, Tangshan 063009 (China); Wu, Ping, E-mail: pingwu@tju.edu.cn [Department of Applied Physics, Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Faculty of Science, Tianjin University, Tianjin 300072 (China)

    2016-12-15

    Highlights: • The Zn doping in monolayer SnS{sub 2} is energetically favored under S-rich condition. • The room temperature ferromagnetism can be realized in Zn-doped monolayer SnS{sub 2}. • The Zn doping enhances the effective utilization in the near-infrared light region. • The Zn doping could lead to the red shift of absorption edge in monolayer SnS{sub 2}. • The Zn-doped monolayer SnS{sub 2} is active for both the oxygen and hydrogen evolution. - Abstract: The electronic, magnetic and optical properties of Zn-doped monolayer SnS{sub 2} have been theoretically investigated with the density functional theory. Numerical results reveal that monolayer SnS{sub 2} can be easily synthesized by cleaving its bulk crystal. Besides, the Zn doping in monolayer SnS{sub 2} is energetically favored under the S-rich with respect to the Sn-rich condition. The doped system exhibits the magnetic ground states due to the formation of defect states above the Fermi level, which are introduced by the hybridization between S-3p states and a small amount of Sn-4d states. The room temperature ferromagnetism can also be realized in Zn-doped monolayer SnS{sub 2}. The injection of Zn can enhance the absorption efficiency of solar spectrum, especially in the near-infrared light region. Moreover, the Zn doping can enhance the photocatalytic activity for both the oxygen and hydrogen evolution reactions in the monolayer SnS{sub 2}.

  3. Magnetic and electron spin resonance studies of W doped CoFe2O4 polycrystalline materials

    Directory of Open Access Journals (Sweden)

    S. R. Singamaneni

    2018-05-01

    Full Text Available We report the magnetic and electron spin resonance (ESR properties of W doped CoFe2O4 polycrystalline materials, prepared by standard solid-state reaction method. W was doped (0-15% in CFO lattice on Fe site. Isothermal magnetization measurements reveal that the coercive field (Hc (1300-2200 Oe and saturation magnetization MS (35-82 emu/g vary strongly as a function of W doping at all the temperatures (4-300 K measured. We believe that a strong decrease in magnetic anisotropy in CFO after doping with W could cause a decrease in Hc. Up on doping CFO with W in place of Fe, the process transforms part of Fe3+ into Fe2+ due to the creation of more oxygen vacancies. This hinders the super-exchange interaction between Fe3+ and Fe2+, which causes a decrease in MS. Zero-field cooled (ZFC and field cooled (FC, 1000 Oe magnetization responses measured at 4 K on 1% W doped CFO show no indication of exchange bias, inferring that there are no other microscopic secondary magnetic phases (no segregation. This observation is corroborated by ESR (9.398 GHz measurements collected as a function of temperature (10-150 K and W doping (0-15%. We find that ESR spectra did not change after doping with W above 0.5%. However, ESR spectra collected from 0.5% W doped CFO sample showed a strong temperature dependence. We observed several ESR signals from 0.5% W doped CFO sample that could be due to phase separation.

  4. Transmission electron microscopy of carbon-coated and iron-doped titania nanoparticles

    KAUST Repository

    Anjum, Dalaver H.

    2016-08-02

    We present a study on the properties of iron (Fe)-doped and carbon (C)-coated titania (TiO2) nanoparticles (NPs) which has been compiled by using x-ray diffraction (XRD), transmission electron microscopy (TEM), and x-ray photoelectron spectroscopy (XPS). These TiO2 NPs were prepared by using the flame synthesis method. This method allows the simultaneous C coating and Fe doping of TiO2 NPs. XRD investigations revealed that the phase of the prepared NPs was anatase TiO2. Conventional TEM analysis showed that the average size of the TiO2 NPs was about 65 nm and that the NPs were uniformly coated with the element C. Furthermore, from the x-ray energy dispersive spectrometry analysis, it was found that about 8 at.% Fe was present in the synthesized samples. High-resolution TEM (HRTEM) revealed the graphitized carbon structure of the layer surrounding the prepared TiO2 NPs. HRTEM analysis further revealed that the NPs possessed the crystalline structure of anatase titania. Energy-filtered TEM (EFTEM) analysis showed the C coating and Fe doping of the NPs. The ratio of L3 and L2 peaks for the Ti-L23 and Fe-L23 edges present in the core loss electron energy loss spectroscopy (EELS) revealed a +4 oxidation state for the Ti and a +3 oxidation state for the Fe. These EELS results were further confirmed with XPS analysis. The electronic properties of the samples were investigated by applying Kramers-Kronig analysis to the low-loss EELS spectra acquired from the prepared NPs. The presented results showed that the band gap energy of the TiO2 NPs decreased from an original value of 3.2 eV to about 2.2 eV, which is quite close to the ideal band gap energy of 1.65 eV for photocatalysis semiconductors. The observed decrease in band gap energy of the TiO2 NPs was attributed to the presence of Fe atoms at the lattice sites of the anatase TiO2 lattice. In short, C-coated and Fe-doped TiO2 NPs were synthesized with a rather cost-effective and comparatively easily scalable method. The

  5. Characterization of electronic charged states of P-doped Si quantum dots using AFM/Kelvin probe

    International Nuclear Information System (INIS)

    Makihara, Katsunori; Xu, Jun; Ikeda, Mitsuhisa; Murakami, Hideki; Higashi, Seiichiro; Miyazaki, Seiichi

    2006-01-01

    Phosphorous doping to Si quantum dots was performed by a pulse injection of 1% PH 3 diluted with He during the dot formation on thermally grown SiO 2 from thermal decomposition of pure SiH 4 , and electron charging to and discharging from P-doped Si dots were studied to characterize their electronic charged states using a Kelvin probe technique in atomic force microscopy (AFM). The potential change corresponding to the extraction of one electron from each of the P-doped Si dots was observed after applying a tip bias as low as + 0.2 V while for undoped Si dots, with almost the same size as P-doped Si dots, almost the same amount of the potential change was detectable only when the tip bias was increased to ∼ 1 V. It is likely that, for P-doped Si dots, the electron extraction from the conduction band occurs and results in a positively charged state with ionized P donor

  6. Substitutional Doping for Aluminosilicate Mineral and Superior Water Splitting Performance

    Science.gov (United States)

    Zhang, Yi; Fu, Liangjie; Shu, Zhan; Yang, Huaming; Tang, Aidong; Jiang, Tao

    2017-07-01

    Substitutional doping is a strategy in which atomic impurities are optionally added to a host material to promote its properties, while the geometric and electronic structure evolution of natural nanoclay mineral upon substitutional metal doping is still ambiguous. This paper first designed an efficient lanthanum (La) doping strategy for nanotubular clay (halloysite nanotube, HNT) through the dynamic equilibrium of a substitutional atom in the presence of saturated AlCl3 solution, and systematic characterization of the samples was performed. Further density functional theory (DFT) calculations were carried out to reveal the geometric and electronic structure evolution upon metal doping, as well as to verify the atom-level effect of the La doping. The CdS loading and its corresponding water splitting performance could demonstrate the effect of La doping. CdS nanoparticles (11 wt.%) were uniformly deposited on the surface of La-doped halloysite nanotube (La-HNT) with the average size of 5 nm, and the notable photocatalytic hydrogen evolution rate of CdS/La-HNT reached up to 47.5 μmol/h. The results could provide a new strategy for metal ion doping and constructive insight into the substitutional doping mechanism.

  7. The effect of oxygen impurity on the electronic and optical properties of calcium, strontium and barium chalcogenide compounds

    International Nuclear Information System (INIS)

    Dadsetani, M.; Beiranvand, R.

    2010-01-01

    Electronic and optical properties of calcium, strontium and barium chalcogenide compounds in NaCl structure are studied using the band structure results obtained through the full potential linearized augmented palne wave method. Different linear relationships are observed between theoretical band gap and 1/a 2 (where a is lattice constant) for calcium, strontium and barium chalcogenide compounds with and without oxygen, respectively. An abnormal behavior of electronic and optical properties are found for compounds containing oxygen. These effects are ascribed to the special properties of Ca-O, Sr-O and Ba-O bonds, which are different from chemical bonds between Ca, Sr and Ba and other chalcogen atoms.

  8. Thermally stimulated luminescence and electron paramagnetic resonance studies on uranium doped calcium phosphate

    CERN Document Server

    Natarajan, V; Veeraraghavan, R; Sastry, M D

    2003-01-01

    Thermally stimulated luminescence (TSL) and electron paramagnetic resonance (EPR) studies on uranium doped calcium phosphate yielded mechanistic information on the observed glow peaks at 365, 410 and 450 K. TSL spectral studies of the glow peaks showed that UO sub 2 sup 2 sup + acts as the luminescent center. Electron paramagnetic resonance studies on gamma-irradiated samples revealed that the predominant radiation induced centers are H sup 0 , PO sub 4 sup 2 sup - , PO sub 3 sup 2 sup - and O sup - ion. Studies on the temperature dependence studies of the EPR spectra of samples annealed to different temperatures indicate the role of H sup 0 and PO sub 4 sup 2 sup - ions in the main glow peak at 410 K.

  9. Topologically non-trivial electronic and magnetic states in doped copper Kagome lattices

    Science.gov (United States)

    Guterding, Daniel; Jeschke, Harald O.; Valenti, Roser

    We present a theoretical investigation of doped copper kagome materials based on natural minerals Herbertsmithite [ZnCu3(OH)6Cl2] and Barlowite[Cu4(OH)6FBr]. Using ab-initio density functional theory calculations we estimate the stability of the hypothetical compounds against structural distortions and analyze their electronic and magnetic properties. We find that materials based on Herbertsmithite present an ideal playground for investigating the interplay of non-trivial band-topology and strong electronic correlation effects. In particular, we propose candidates for the Quantum Spin Hall effect at filling 4/3 and the Quantum Anomalous Hall effect at filling 2/3. For the Barlowite system we point out a route to realize a Quantum Spin Liquid. This work was supported by Deutsche Forschungsgemeinschaft under Grant No. SFB/TR 49 and the National Science Foundation under Grant No. PHY11-25915.

  10. Electronic structure and phase stability during martensitic transformation in Al-doped ZrCu intermetallics

    International Nuclear Information System (INIS)

    Qiu Feng; Shen Ping; Liu Tao; Lin Qiaoli; Jiang Qichuan

    2010-01-01

    Martensitic transformation, phase stability and electronic structure of Al-doped ZrCu intermetallics were investigated by experiments and first-principles calculations using the pseudopotentials plane wave method. The formation energy calculations indicate that the stability of the ZrCu phase increases with the increasing Al content. Al plays a decisive role in controlling the formation and microstructures of the martensite phases in Zr-Cu-Al alloys. The total energy difference between ZrCu (B2) austenite and ZrCu martensite plays an important role in the martensitic transformation. The phase stability is dependent on its electronic structure. The densities of states (DOS) of the intermetallics were discussed in detail.

  11. Electronic structure and magnetic properties of Ni-doped SnO2 thin films

    Science.gov (United States)

    Sharma, Mayuri; Kumar, Shalendra; Alvi, P. A.

    2018-05-01

    This paper reports the electronic structure and magnetic properties of Ni-doped SnO2 thin film which were grown on Si (100) substrate by PLD (pulse laser deposition) technique under oxygen partial pressure (PO2). For getting electronic structure and magnetic behavior, the films were characterized using near edge X-ray absorption fine structure spectroscopy (NEXAFS) and DC magnetization measurements. The NEXAFS study at Ni L3,2 edge has been done to understand the local environment of Ni and Sn ions within SnO2 lattice. DC magnetization measurement shows that the saturation magnetization increases with the increase in substitution of Ni2+ ions in the system.

  12. Positron-electron autocorrelation function study of E-center in phosphorus-doped silicon

    International Nuclear Information System (INIS)

    Ho, K.F.; Beling, C.D.; Fung, S.; Biasini, M.; Ferro, G.; Gong, M.

    2004-01-01

    Two dimensional fourier transformed angular correlation of annihilation radiation (2D-FT-ACAR) spectra have been taken for 10 19 cm -3 phosphorus-doped Si in the as grown state and after being subjected to 1.8 MeV e - fluences of 2 x 10 18 cm -2 . In the spectra of the irradiated samples, the zero-crossing points are observed to displace outwards from the bravais lattice positions. It is suggested that this results from positrons annihilating with electrons in localized orbitals at the defect site. An attempt is made to extract just the component of the defect's positron-electron autocorrelation function that relates to the localized defect orbitals. It is argued that such an extracted real-space function may provide a suitable means for obtaining a mapping of localized defect orbitals. (orig.)

  13. Design of transparent conductors and periodic two-dimensional electron gases without doping

    Science.gov (United States)

    Zhang, Xiuwen; Zhang, Lijun; Zunger, Alex; Perkins, John; Materials by Design Team; John D. Perkins Collaboration

    The functionality of transparency plus conductivity plays an important role in renewable energy and information technologies, including applications such as solar cells, touch-screen sensors, and flat panel display. However, materials with such seemingly contraindicated properties are difficult to come by. The traditional strategy for designing bulk transparent conductors (TCs) starts from a wide-gap insulator and finds ways to make it conductive by extensive doping. We propose a different strategy for TC design--starting with a metallic conductor and designing transparency by control of intrinsic interband transitions and intraband plasmonic frequency. We identified specific design principles for prototypical intrinsic TC classes and searched computationally for materials that satisfy them. The electron gases in the 3D intrinsic TCs demonstrate intriguing properties, such as periodic 2D electron gas regions with very high carrier density. We will discuss a more extended search of these functionalities, in parallel with stability and growability calculations

  14. X-ray absorption study of the electronic structure of Mn-doped amorphous Si

    Energy Technology Data Exchange (ETDEWEB)

    Arenholz, Elke; Zeng, Li; Huegel, A.; Helgren, E.; Hellman, F.; Piamonteze, C.; Arenholz, E.

    2008-03-08

    The electronic structure of Mn in amorphous Si (a-Mn{sub x}Si{sub 1?x}) is studied by X-ray absorption spectroscopy at the Mn L{sub 3,2} edges for x = 0.005-0.18. Except the x = 0.005 sample, which shows a slight signature of Mn{sup 2+} atomic multiplets associated with a local Mn moment, all samples have broad and featureless L{sub 3,2} absorption peaks, corresponding to an itinerant state for all 3d electrons. The broad X-ray absorption spectra exclude the possibility of a localized 3d moment and explain the unexpectedly quenched Mn moment in this magnetically-doped amorphous semiconductor. Such a fully delocalized d state of Mn dopant in Si has not been previously suggested.

  15. Multilayered phosphorescent polymer light-emitting diodes using a solution-processed n-doped electron transport layer

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Yuehua; Zhang, Mengke [Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023 (China); Zhang, Xinwen, E-mail: iamxwzhang@njupt.edu.cn [Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023 (China); Lei, Zhenfeng; Zhang, Xiaolin; Hao, Lin; Fan, Quli [Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023 (China); Lai, Wenyong, E-mail: iamwylai@njupt.edu.cn [Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023 (China); Huang, Wei [Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023 (China); Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing 211816 (China)

    2017-06-15

    Efficient multilayered green phosphorescent polymer light-emitting devices (PhPLEDs) were successfully fabricated using a solution-processed n-doped small molecular electron transporting layer (ETL) composed of 1,3,5-tris(N-phenyl-benzimidazol-2-yl)-benzene (TPBi) and CsF. We found that the electroluminescence properties of the devices with n-doped ETLs are significantly improved. The maximum luminance efficiency of the device with 7.5 wt% CsF doped TPBi ETL reached 26.9 cd/A, which is 1.5 times as large as that of the undoped device. The impedance spectra of the devices and electron transport properties of the CsF doped ETLs demonstrate that doping dramatically decreases the impedance and enhances the electrical conductivity. Similarly, enhanced performance of PhPLED is also observed by use of CsF-doped 4,7-diphenyl-1,10 -phenanthroline (BPhen) ETL. These results demonstrate that CsF can be used as an effective n-dopant in solution-processed devices.

  16. Multilayered phosphorescent polymer light-emitting diodes using a solution-processed n-doped electron transport layer

    International Nuclear Information System (INIS)

    Chen, Yuehua; Zhang, Mengke; Zhang, Xinwen; Lei, Zhenfeng; Zhang, Xiaolin; Hao, Lin; Fan, Quli; Lai, Wenyong; Huang, Wei

    2017-01-01

    Efficient multilayered green phosphorescent polymer light-emitting devices (PhPLEDs) were successfully fabricated using a solution-processed n-doped small molecular electron transporting layer (ETL) composed of 1,3,5-tris(N-phenyl-benzimidazol-2-yl)-benzene (TPBi) and CsF. We found that the electroluminescence properties of the devices with n-doped ETLs are significantly improved. The maximum luminance efficiency of the device with 7.5 wt% CsF doped TPBi ETL reached 26.9 cd/A, which is 1.5 times as large as that of the undoped device. The impedance spectra of the devices and electron transport properties of the CsF doped ETLs demonstrate that doping dramatically decreases the impedance and enhances the electrical conductivity. Similarly, enhanced performance of PhPLED is also observed by use of CsF-doped 4,7-diphenyl-1,10 -phenanthroline (BPhen) ETL. These results demonstrate that CsF can be used as an effective n-dopant in solution-processed devices.

  17. Electron paramagnetic resonance study of copper impurity charge-states in PbWO.sub.4./sub. scintillator

    Czech Academy of Sciences Publication Activity Database

    Hofstaetter, A.; Laguta, V. V.; Meyer, B.K.; Nikl, Martin; Rosa, Jan; Zhu, R.Y.

    2004-01-01

    Roč. 38, - (2004), s. 703-706 ISSN 1350-4487 R&D Projects: GA AV ČR(CZ) KSK1010104 Keywords : electron paramagnetic resonance * tungstates * defects Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.664, year: 2004

  18. Enhanced carrier collection efficiency and reduced quantum state absorption by electron doping in self-assembled quantum dot solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Li, Tian, E-mail: tianlee@umd.edu, E-mail: dage@ece.umd.edu; Dagenais, Mario, E-mail: tianlee@umd.edu, E-mail: dage@ece.umd.edu [Department of Electrical Engineering, University of Maryland, College Park, Maryland 20742 (United States); Lu, Haofeng; Fu, Lan; Tan, Hark Hoe; Jagadish, Chennupati [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200 (Australia)

    2015-02-02

    Reduced quantum dot (QD) absorption due to state filling effects and enhanced electron transport in doped QDs are demonstrated to play a key role in solar energy conversion. Reduced QD state absorption with increased n-doping is observed in the self-assembled In{sub 0.5}Ga{sub 0.5}As/GaAs QDs from high resolution below-bandgap external quantum efficiency (EQE) measurement, which is a direct consequence of the Pauli exclusion principle. We also show that besides partial filling of the quantum states, electron-doping produces negatively charged QDs that exert a repulsive Coulomb force on the mobile electrons, thus altering the electron trajectory and reducing the probability of electron capture, leading to an improved collection efficiency of photo-generated carriers, as indicated by an absolute above-bandgap EQE measurement. The resulting redistribution of the mobile electron in the planar direction is further validated by the observed photoluminescence intensity dependence on doping.

  19. Operation voltage behavior of organic light emitting diodes with polymeric buffer layers doped by weak electron acceptor

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Hyeon Soo; Cho, Sang Hee [Department of Information Display and Advanced Display Research Center, Kyung Hee University, Seoul 130-701 (Korea, Republic of); Seo, Jaewon; Park, Yongsup [Department of Physics, Kyung Hee University, Seoul 130-701 (Korea, Republic of); Suh, Min Chul, E-mail: mcsuh@khu.ac.kr [Department of Information Display and Advanced Display Research Center, Kyung Hee University, Seoul 130-701 (Korea, Republic of)

    2013-11-01

    We present polymeric buffer materials based on poly[2,7-(9,9-dioctyl-fluorene)-co-(1,4-phenylene -((4-sec-butylphenyl)imino)-1,4-phenylene)] (TFB) for highly efficient solution processed organic light emitting diodes (OLEDs). Doped TFB with 9,10-dicyanoanthracene, a weak electron acceptor results in significant improvement of current flow and driving voltage. Maximum current- and power-efficiency value of 12.6 cd/A and 18.1 lm/W are demonstrated from phosphorescent red OLEDs with this doped polymeric anode buffer system. - Highlights: • Polymeric buffer materials for organic light emitting diodes (OLEDs). • Method to control hole conductivity of polymeric buffer layer in OLED device. • Enhanced current density of buffer layers upon 9,10-dicyanoanthracene (DCA) doping. • Comparison of OLED devices having polymeric buffer layer with or without DCA. • Effect on operating voltage by doping DCA in the buffer layer.

  20. Role of anion doping on electronic structure and magnetism of GdN by first principles calculations

    KAUST Repository

    Zhang, Xuejing; Mi, Wenbo; Guo, Zaibing; Cheng, Yingchun; Chen, Guifeng; Bai, Haili

    2014-01-01

    We have investigated the electronic structure and magnetism of anion doped GdN1-yXy (X = B, C, O, F, P, S and As) systems by first-principles calculations based on density functional theory. GdN 1-yXy systems doped by O, C, F, P, and S atoms are more stable than those doped by B and As atoms because of relatively high binding energies. The anion doping and the N defect states modify the density of states at the Fermi level, resulting in a decrease in spin polarization and a slight increase in the magnetic moment at the Gd and N sites. © 2014 The Royal Society of Chemistry.

  1. Characterization of some electronic spectral parameters for doped Nd (III) ion in saturated aqueous solution of some pharmaceutical compounds

    International Nuclear Information System (INIS)

    Naulakha, Neelam; Soni, K.P.; Bhati, P.R.

    2000-01-01

    The stereo-environment of doped Nd(III) ion in various saturated solutions of some medicinal compounds has been studied for various electronic spectral parameters. The various electronic parameters, viz., Slater Condon (F k ), Lande (ζ 4f ) intensity of hypersensitive band ( 4 G 5/2 ), bonding parameter (b 1/2 ), Judd-Ofelt parameter (Tλ) and Racah parameter (E k ) for Nd(III) ion doped in saturated solution of diphenylhydramine, tripelennamine, chlorophenaramine, promethazine, terfinadine, naproxen, fenoprofen, flurbiprofen, oxaprozine, ketoprofen and ibuprofen have been studied. (author)

  2. Doping dependence and anisotropy of minority electron mobility in molecular beam epitaxy-grown p type GaInP

    Energy Technology Data Exchange (ETDEWEB)

    Haegel, N. M.; Christian, T.; Norman, A. G.; Mascarenhas, A. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Scandrett, C. [Naval Postgraduate School, Monterey, California 93943 (United States); Misra, Pranob; Liu, Ting; Sukiasyan, Arsen; Pickett, Evan; Yuen, Homan [Solar Junction, Inc., San Jose, California 95131 (United States)

    2014-11-17

    Direct imaging of minority electron transport via the spatially resolved recombination luminescence signature has been used to determine carrier diffusion lengths in GaInP as a function of doping. Minority electron mobility values are determined by performing time resolved photoluminescence measurements of carrier lifetime on the same samples. Values at 300 K vary from ∼2000 to 400 cm{sup 2}/V s and decrease with increasing doping. Anisotropic diffusion lengths and strongly polarized photoluminescence are observed, resulting from lateral composition modulation along the [110] direction. We report anisotropic mobility values associated with carrier transport parallel and perpendicular to the modulation direction.

  3. Electron paramagnetic resonance study of Ce doped partially stabilized ZrO2 crystals

    Directory of Open Access Journals (Sweden)

    Mikhail А. Borik

    2017-09-01

    Full Text Available ZrO2 (PSZ solid solutions crystals stabilized with yttrium and cerium oxides have been studied using electron paramagnetic resonance (EPR in the X and Q ranges. Zr3+ have been observed centers in the as-annealed ZrO2 crystals stabilized only by yttrium oxide (2.8 mol% Y2O3. Another type of paramagnetic-O-centers appear as a result of CeO2 addition to ZrO2 crystals along with yttrium oxide. To estimate the concentration of Ce3+ ions in PZS crystals, we recorded the EPR spectra in the presence of a reference at 7 K. Paramagnetic Ce3+ ions have been identified and their relative amount in the PSZ crystals before and after high-temperature heat treatment has been assessed. Annealing in air leads decreases the concentration of Ce3+ ions for all the test compositions and changes the color of the crystals from red to white. After annealing of the sample 2.0Y0.8Ce3Zr, the amount of paramagnetic Ce3+ ions decreased approximately twofold. Paramagnetic centers from Ce3+ have not been detected in the specimen with a low cerium content of 0.1 mol% after annealing which indicates the complete transition of Ce3+ to the Ce4+ state. We show that the forming cerium paramagnetic centers are bound by strong exchange interactions. No angular dependence of the EPR lines of the paramagnetic Ce3+ cations on the applied external magnetic field has been observed. Probable origin of the absence of angular dependence is that the impurity rare-earth ions are located close to one another, forming impurity clusters with an effective spin of Seff=1/2.

  4. Photoinduced electron transfer and solvation in iodide-doped acetonitrile clusters.

    Science.gov (United States)

    Ehrler, Oli T; Griffin, Graham B; Young, Ryan M; Neumark, Daniel M

    2009-04-02

    We have used ultrafast time-resolved photoelectron imaging to measure charge transfer dynamics in iodide-doped acetonitrile clusters I(-)(CH(3)CN)(n) with n = 5-10. Strong modulations of vertical detachment energies were observed following charge transfer from the halide, allowing interpretation of the ongoing dynamics. We observe a sharp drop in the vertical detachment energy (VDE) within 300-400 fs, followed by a biexponential increase that is complete by approximately 10 ps. Comparison to theory suggests that the iodide is internally solvated and that photodetachment results in formation of a diffuse electron cloud in a confined cavity. We interpret the initial drop in VDE as a combination of expansion of the cavity and localization of the excess electron on one or two solvent molecules. The subsequent increase in VDE is attributed to a combination of the I atom leaving the cavity and rearrangement of the acetonitrile molecules to solvate the electron. The n = 5-8 clusters then show a drop in VDE of around 50 meV on a much longer time scale. The long-time VDEs are consistent with those of (CH(3)CN)(n)(-) clusters with internally solvated electrons. Although the excited-state created by the pump pulse decays by emission of a slow electron, no such decay is seen by 200 ps.

  5. Helium induced fine structure in the electronic spectra of anthracene derivatives doped into superfluid helium nanodroplets

    International Nuclear Information System (INIS)

    Pentlehner, D.; Slenczka, A.

    2015-01-01

    Electronic spectra of organic molecules doped into superfluid helium nanodroplets show characteristic features induced by the helium environment. Besides a solvent induced shift of the electronic transition frequency, in many cases, a spectral fine structure can be resolved for electronic and vibronic transitions which goes beyond the expected feature of a zero phonon line accompanied by a phonon wing as known from matrix isolation spectroscopy. The spectral shape of the zero phonon line and the helium induced phonon wing depends strongly on the dopant species. Phonon wings, for example, are reported ranging from single or multiple sharp transitions to broad (Δν > 100 cm −1 ) diffuse signals. Despite the large number of example spectra in the literature, a quantitative understanding of the helium induced fine structure of the zero phonon line and the phonon wing is missing. Our approach is a systematic investigation of related molecular compounds, which may help to shed light on this key feature of microsolvation in superfluid helium droplets. This paper is part of a comparative study of the helium induced fine structure observed in electronic spectra of anthracene derivatives with particular emphasis on a spectrally sharp multiplet splitting at the electronic origin. In addition to previously discussed species, 9-cyanoanthracene and 9-chloroanthracene will be presented in this study for the first time

  6. Delocalized and localized states of eg electrons in half-doped manganites.

    Science.gov (United States)

    Winkler, E L; Tovar, M; Causa, M T

    2013-07-24

    We have studied the magnetic behaviour of half-doped manganite Y0.5Ca0.5MnO3 in an extended range of temperatures by means of magnetic susceptibility, χ(T), and electron spin resonance (ESR) experiments. At high temperature the system crystallizes in an orthorhombic structure. The resistivity value, ρ ≃ 0.05 Ω cm at 500 K, indicates a metallic behaviour, while the Curie-Weiss dependence of χ(T) and the thermal evolution of the ESR parameters are very well described by a model that considers a system conformed by localized Mn(4+) cores, [Formula: see text], and itinerant, eg, electrons. The strong coupling between t2g and eg electrons results in an enhanced Curie constant and an FM Curie-Weiss temperature that overcomes the AFM interactions between the [Formula: see text] cores. A transition to a more distorted phase is observed at T ≈ 500 K and signatures of localization of the eg electrons appear in the χ(T) behaviour below 300 K. A new Curie-Weiss regime is observed, where the Curie-constant value is consistent with dimer formation. Based on mean-field calculations, the dimer formation is predicted as a function of the interaction strength between the t2g and eg electrons.

  7. High energy electron irradiation effects on Ga-doped ZnO thin films for optoelectronic space applications

    Science.gov (United States)

    Serrao, Felcy Jyothi; Sandeep, K. M.; Bhat, Shreesha; Dharmaprakash, S. M.

    2018-03-01

    Gallium-doped ZnO (GZO) thin films of thickness 394 nm were prepared by a simple, cost-effective sol-gel spin coating method. The effect of 8 MeV electron beam irradiation with different irradiation doses ranging from 0 to 10 kGy on the structural, optical and electrical properties was investigated. Electron irradiation influences the changes in the structural properties and surface morphology of GZO thin films. X-ray diffraction analysis showed that the polycrystalline nature of the GZO films is unaffected by the high energy electron irradiation. The grain size and the surface roughness were found maximum for the GZO film irradiated with 10 kGy electron dosage. The average transmittance of GZO thin films decreased after electron irradiation. The optical band gap of Ga-doped ZnO films was decreased with the increase in the electron dosage. The electrical resistivity of GZO films decreased from 4.83 × 10-3 to 8.725 × 10-4 Ω cm, when the electron dosage was increased from 0 to 10 kGy. The variation in the optical and electrical properties in the Ga-doped ZnO thin films due to electron beam irradiation in the present study is useful in deciding their compatibility in optoelectronic device applications in electron radiation environment.

  8. Electronic and magnetic properties of 1T-HfS{sub 2} by doping transition-metal atoms

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Xu, E-mail: zhaoxu@htu.cn [College of Physics and Electronic Engineering, Henan Normal University, Xinxiang, Henan 453007 (China); Wang, Tianxing; Wang, Guangtao [College of Physics and Electronic Engineering, Henan Normal University, Xinxiang, Henan 453007 (China); Dai, Xianqi [College of Physics and Electronic Engineering, Henan Normal University, Xinxiang, Henan 453007 (China); Department of Physics, Zhengzhou Normal University, Zhengzhou, Henan 450044 (China); Xia, Congxin [College of Physics and Electronic Engineering, Henan Normal University, Xinxiang, Henan 453007 (China); Yang, Lin [School of Chemistry and Chemical Engineering, Henan Normal University, Xinxiang 453007 (China)

    2016-10-15

    Highlights: • Pristine 1T-HfS{sub 2} is a semiconductor with indirect gaps of 1.250 eV • Magnetism can be observed for V, Cr, Mn, Fe, Co, and Cu doping. • Strong p–d hybridization was found between TM 3d orbitals and S 3p orbitals. • V-doped 1T-HfS{sub 2} is ideal for spin injection. - Abstract: We explored the electronic and magnetic properties of 1T-HfS{sub 2} doped by transition metal (TM) atom using the first-principles calculation. We doped the transition metal atoms from the IIIB to VIB groups in nonmagnetic 1T-HfS{sub 2}. Numerical results show that the pristine 1T-HfS{sub 2} is a semiconductor with indirect gaps of 1.250 eV. Magnetism can be observed for V, Cr, Mn, Fe, Co, and Cu doping. The polarized charges mainly arise from the localized 3d electrons of the TM atom. The strong p–d hybridization was found between the 3d orbitals of TM and 3p orbitals of S. The substituted 1T-HfS{sub 2} can be a metal, semiconductor or half-metal. Analysis of the band structure and magnetic properties indicates that TM-doped HfS{sub 2} (TM = V, Fe, Cu) are promising systems to explore two-dimensional diluted magnetic semiconductors. The formation energy calculations also indicate that it is energetically favorable and relatively easier to incorporate transition metal atom into the HfS{sub 2} under S-rich experimental conditions. In contrast, V-doped HfS{sub 2} has relatively wide half-metallic gap and low formation energy. So V-doped 1T-HfS{sub 2} is ideal for spin injection, which is important for application in semiconductor spintronics.

  9. Influence of nitrogen-doping concentration on the electronic structure of CuAlO{sub 2} by first-principles studies

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Wei-wei, E-mail: zmliuwwliu@126.com; Chen, Hong-xia; Liu, Cheng-lin; Wang, Rong

    2017-02-05

    Effect of N doping concentration on the electronic structure of N-doped CuAlO{sub 2} was investigated by density functional theory based on generalized-gradient approximation plus orbital potential. Lattice parameters a and c both increase with increasing N-doping concentration. Formation energies increase with increasing N doping concentration and all N-doped CuAlO{sub 2} were structurally stable. The calculated band gaps for N-doped CuAlO{sub 2} narrowed compared to pure CuAlO{sub 2}, which was attributed to the stronger hybridization between Cu-3d and N-2p states and the downward shift of Cu-3p states in conduction bands. The higher the N-doping concentration is, the narrower the band gap. N-doped CuAlO{sub 2} shows a typical p-type semiconductor. The band structure changed from indirect to direct after N doping which will benefit the application of the CuAlO{sub 2} materials in optoelectronic and electronic devices. - Highlights: • Electronic structures of CuAlO{sub 2} with different N content were investigated. • The higher the N-doping concentration is, the narrower the band gap. • All the CuAlO{sub 2} with different N content were structurally stable. • The N-doped CuAlO{sub 2} shows a typical p-type semiconductor characteristic.

  10. Fluid and gyrokinetic simulations of impurity transport at JET

    DEFF Research Database (Denmark)

    Nordman, H; Skyman, A; Strand, P

    2011-01-01

    Impurity transport coefficients due to ion-temperature-gradient (ITG) mode and trapped-electron mode turbulence are calculated using profile data from dedicated impurity injection experiments at JET. Results obtained with a multi-fluid model are compared with quasi-linear and nonlinear gyrokinetic...... simulation results obtained with the code GENE. The sign of the impurity convective velocity (pinch) and its various contributions are discussed. The dependence of the impurity transport coefficients and impurity peaking factor −∇nZ/nZ on plasma parameters such as impurity charge number Z, ion logarithmic...

  11. Device characteristics of organic light-emitting diodes based on electronic structure of the Ba-doped Alq3 layer.

    Science.gov (United States)

    Lim, Jong Tae; Kim, Kyung Nam; Yeom, Geun Young

    2009-12-01

    Organic light-emitting diodes (OLEDs) with a Ba-doped tris(8-quinolinolato)aluminum(III) (Alq3) layer were fabricated to reduce the barrier height for electron injection and to improve the electron conductivity. In the OLED consisting of glass/ITO/4,4',4"-tris[2-naphthylphenyl-1-phenylamino]triphenylamine (2-TNATA, 30 nm)/4,4'-bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl (NPB, 18 nm)/Alq3 (42 nm)/Ba-doped Alq3 (20 nm, x%: x = 0, 10, 25, and 50)/Al (100 nm), the device with the Alq3 layer doped with 10% Ba showed the highest light out-coupling characteristic. However, as the Ba dopant concentration was increased from 25% to 50%, this device characteristic was largely reduced. The characteristics of these devices were interpreted on the basis of the chemical reaction between Ba and Alq3 and the electron injection property by analyzing the electronic structure of the Ba-doped Alq3 layer. At a low Ba doping of 10%, mainly the Alq3 radical anion species was formed. In addition, the barrier height for electron injection in this layer was decreased to 0.6 eV, when compared to the pristine Alq3 layer. At a high Ba doping of 50%, the Alq3 molecules were severely decomposed. When the Ba dopant concentration was changed, the light-emitting characteristics of the devices were well coincided with the formation mechanism of Alq3 radical anion and Alq3 decomposition species.

  12. The screening of charged impurities in bilayer graphene

    International Nuclear Information System (INIS)

    Zhang Wenjing; Li, Lain-Jong

    2010-01-01

    Positively charged impurities were introduced into a bilayer graphene (BLG) transistor by n-doping with dimethylformamide. Subsequent exposure of the BLG device to moisture resulted in a positive shift of the Dirac point and an increase of hole mobility, suggesting that moisture could reduce the scattering strength of the existing charged impurities. In other words, moisture screened off the 'effective density' of charged impurities. At the early stage of moisture screening the scattering of hole carriers is dominated by long-range Coulomb scatter, but an alternative scattering mechanism should also be taken into consideration when the effective density of impurities is further lowered on moisture exposure.

  13. Collective impurity effects in the Heisenberg triangular antiferromagnet

    International Nuclear Information System (INIS)

    Maryasin, V S; Zhitomirsky, M E

    2015-01-01

    We theoretically investigate the Heisenberg antiferromagnet on a triangular lattice doped with nonmagnetic impurities. Two nontrivial effects resulting from collective impurity behavior are predicted. The first one is related to presence of uncompensated magnetic moments localized near vacancies as revealed by the low-temperature Curie tail in the magnetic susceptibility. These moments exhibit an anomalous growth with the impurity concentration, which we attribute to the clustering mechanism. In an external magnetic field, impurities lead to an even more peculiar phenomenon lifting the classical ground-state degeneracy in favor of the conical state. We analytically demonstrate that vacancies spontaneously generate a positive biquadratic exchange, which is responsible for the above degeneracy lifting

  14. New insights on the synthesis and electronic transport in bulk polycrystalline Pr-doped SrTiO3−δ

    KAUST Repository

    Dehkordi, Arash Mehdizadeh; Bhattacharya, Sriparna; Darroudi, Taghi; Alshareef, Husam N.; Tritt, Terry M.

    2015-01-01

    versus Pr6O11) on the synthesis and electronic transport in Pr-doped SrTiO3 ceramics. It was observed that the high-temperature electronic transport properties are independent of the choice of praseodymium doping source for samples prepared following our

  15. Combined effect of dopant and electron beam-irradiation on phase transition in lithium potassium sulphate[Lithium potassium sulphate; Phase transition; Impurity effect; Thermal properties

    Energy Technology Data Exchange (ETDEWEB)

    Kassem, M.E.; Gaafar, M.; Abdel Gawad, M.M.H.; El-Muraikhi, M.; Ragab, I.M

    2004-02-01

    Thermodynamic studies of polycrystalline ruthenium (Ru) doped LiKSO{sub 4} have been made for different concentrations of Ru in the range 0%, 0.1%, 0.2%, 0.5%, 1%, 2%, 3% by weight. The thermal behaviour has been investigated using a differential scanning calorimeter in the vicinity of high temperature phases. From this, the effect of electron beam-irradiation on the thermal properties of these polycrystalline samples has been studied. The results showed a change in the transition temperature T{sub c}, as well as the value of specific heat C{sub P{sub max}} at the transition temperature due to the change in Ru content and irradiation energies. The change of enthalpy and entropy of the polycrystalline have been estimated numerically.

  16. Impurity trapped excitons under high hydrostatic pressure

    Science.gov (United States)

    Grinberg, Marek

    2013-09-01

    Paper summarizes the results on pressure effect on energies of the 4fn → 4fn and 4fn-15d1 → 4fn transitions as well as influence of pressure on anomalous luminescence in Lnα+ doped oxides and fluorides. A model of impurity trapped exciton (ITE) was developed. Two types of ITE were considered. The first where a hole is localized at the Lnα+ ion (creation of Ln(α+1)+) and an electron is attracted by Coulomb potential at Rydberg-like states and the second where an electron captured at the Lnα+ ion (creation of Ln(α-1)+) and a hole is attracted by Coulomb potential at Rydberg-like states. Paper presents detailed analysis of nonlinear changes of energy of anomalous luminescence of BaxSr1-xF2:Eu2+ (x > 0.3) and LiBaF3:Eu2+, and relate them to ITE-4f65d1 states mixing.

  17. Improved performance of quantum dot light emitting diode by modulating electron injection with yttrium-doped ZnO nanoparticles

    Science.gov (United States)

    Li, Jingling; Guo, Qiling; Jin, Hu; Wang, Kelai; Xu, Dehua; Xu, Yongjun; Xu, Gang; Xu, Xueqing

    2017-10-01

    In a typical light emitting diode (QD-LED), with ZnO nanoparticles (NPs) serving as the electron transport layer (ETL) material, excessive electron injection driven by the matching conduction band maximum (CBM) between the QD and this oxide layer usually causes charge imbalance and degrades the device performance. To address this issue, the electronic structure of ZnO NPs is modified by the yttrium (Y) doping method. We demonstrate that the CBM of ZnO NPs has a strong dependence on the Y-doping concentration, which can be tuned from 3.55 to 2.77 eV as the Y doping content increases from 0% to 9.6%. This CBM variation generates an enlarged barrier between the cathode and this ZnO ETL benefits from the modulation of electron injection. By optimizing electron injection with the use of a low Y-doped (2%) ZnO to achieve charge balance in the QD-LED, device performance is significantly improved with maximum luminance, peak current efficiency, and maximal external quantum efficiency increase from 4918 cd/m2, 11.3 cd/A, and 4.5% to 11,171 cd/m2, 18.3 cd/A, and 7.3%, respectively. This facile strategy based on the ETL modification enriches the methodology of promoting QD-LED performance.

  18. FLAPW Study of the EFG Tensor at Cd Impurities in In{sub 2}O{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Errico, L. A., E-mail: errico@fisica.unlp.edu.ar; Renteria, M.; Fabricius, G.; Darriba, G. N. [Universidad Nacional de La Plata, Departamento de Fisica, Facultad de Ciencias Exactas (Argentina)

    2004-11-15

    We report an ab initio study of the electric-field gradient tensor (EFG) at Cd impurities located at both nonequivalent cationic sites in the semiconductor In{sub 2}O{sub 3}. Calculations were performed with the FLAPW method that allows us to treat the electronic structure of the doped system and the atomic relaxations introduced by the impurities in the host in a fully self-consistent way. From our results for the EFG (in excellent agreement with the experiments), it is clear that the problem of the EFG at Cd impurities in In{sub 2}O{sub 3} cannot be described by the point-charge model and antishielding factors.

  19. Dynamic behavior of correlated electrons in the insulating doped semiconductor Si:P

    Energy Technology Data Exchange (ETDEWEB)

    Ritz, Elvira

    2009-06-04

    At low energy scales charge transport in the insulating Si:P is dominated by activated hopping between the localized donor electron states. Theoretical models for a disordered electronic system with a long-range Coulomb interaction are appropriate to interpret the electric conductivity spectra. With a novel and advanced method we perform broadband phase sensitive measurements of the reflection coefficient from 45 MHz up to 5 GHz, employing a vector network analyzer with a 2.4 mm coaxial sensor, which is terminated by the sample under test. While the material parameters (conductivity and permittivity) can be easily extracted from the obtained impedance data if the sample is metallic, no direct solution is possible if the material under investigation is an insulator. Focusing on doped semiconductors with largely varying conductivity and dielectric function, we present a closed calibration and evaluation procedure with an optimized theoretical and experimental complexity, based on the rigorous solution for the electromagnetic field inside the insulating sample, combined with the variational principle. Basically no limiting assumptions are necessary in a strictly defined parameter range. As an application of our new method, we have measured the complex broadband microwave conductivity of Si:P in a broad range of phosphorus concentration n/n{sub c} from 0.56 to 0.9 relative to the critical value n{sub c}=3.5 x 10{sup 18} cm{sup -3} of the metal-insulator transition driven by doping at temperatures down to 1.1 K, and studied unresolved issues of fundamental research concerning the electronic correlations and the metal-insulator transition. (orig.)

  20. Monte Carlo method for magnetic impurities in metals

    Science.gov (United States)

    Hirsch, J. E.; Fye, R. M.

    1986-01-01

    The paper discusses a Monte Carlo algorithm to study properties of dilute magnetic alloys; the method can treat a small number of magnetic impurities interacting wiith the conduction electrons in a metal. Results for the susceptibility of a single Anderson impurity in the symmetric case show the expected universal behavior at low temperatures. Some results for two Anderson impurities are also discussed.

  1. Electron and hole doping effects in Sr{sub 2}FeMoO{sub 6} double perovskites

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez, D. E-mail: diana.sanchez@icmm.csic.es; Alonso, J.A.; Garcia-Hernandez, M.; Martinez-Lope, M.J.; Casais, M.T.; Martinez, J.L.; Fernandez-Diaz, M.T

    2004-05-01

    Electron and hole doping effects in the ferromagnetic and structural properties of the double perovskite Sr{sub 2}FeMoO{sub 6} are studied along the series Sr{sub 2-x}La{sub x}FeMoO{sub 6} (0{<=}x{<=}1) and Sr{sub 2-x}FeMoO{sub 6} (0{<=}x{<=}0.4) from neutron powder diffraction and magnetization data. Sr-deficient samples (hole doped) show moderate changes in the structure and both T{sub c} and M{sub s} rapidly decrease with x. On the contrary, a change from tetragonal to monoclinic symmetry and a non monotonic behaviour in T{sub c} is found in the La-substituted series (electron doped)

  2. Tuning electronic transport via hepta-alanine peptides junction by tryptophan doping.

    Science.gov (United States)

    Guo, Cunlan; Yu, Xi; Refaely-Abramson, Sivan; Sepunaru, Lior; Bendikov, Tatyana; Pecht, Israel; Kronik, Leeor; Vilan, Ayelet; Sheves, Mordechai; Cahen, David

    2016-09-27

    Charge migration for electron transfer via the polypeptide matrix of proteins is a key process in biological energy conversion and signaling systems. It is sensitive to the sequence of amino acids composing the protein and, therefore, offers a tool for chemical control of charge transport across biomaterial-based devices. We designed a series of linear oligoalanine peptides with a single tryptophan substitution that acts as a "dopant," introducing an energy level closer to the electrodes' Fermi level than that of the alanine homopeptide. We investigated the solid-state electron transport (ETp) across a self-assembled monolayer of these peptides between gold contacts. The single tryptophan "doping" markedly increased the conductance of the peptide chain, especially when its location in the sequence is close to the electrodes. Combining inelastic tunneling spectroscopy, UV photoelectron spectroscopy, electronic structure calculations by advanced density-functional theory, and dc current-voltage analysis, the role of tryptophan in ETp is rationalized by charge tunneling across a heterogeneous energy barrier, via electronic states of alanine and tryptophan, and by relatively efficient direct coupling of tryptophan to a Au electrode. These results reveal a controlled way of modulating the electrical properties of molecular junctions by tailor-made "building block" peptides.

  3. Hydrogen doped thin film diamond. Properties and application for electronic devices

    International Nuclear Information System (INIS)

    Looi, H.J.

    2000-01-01

    The face centered cubic allotrope of carbon, diamond, is a semiconducting material which possesses a valuable combination of extreme properties such as super-hardness, highest thermal conductivity, chemical hardness, radiation hardness, wide bandgap and others. Advances in chemical vapour deposition (CVD) technology have lead to diamond becoming available in previously unattainable forms for example over large areas and with controllable purity. This has generated much research interest towards developing the knowledge and processing technology that would be necessary to fully exploit these extreme properties. Electronic devices fabricated on oxidised boron doped polycrystalline CVD diamond (PCD) displayed very poor and inconsistent characteristic. As a result, many electronic applications of polycrystalline diamond films were confined to ultra-violet (UV) and other forms of device which relied on the high intrinsic resistivity on undoped diamond films. If commercially accessible PCD films are to advance in areas which involve sophisticated electronic applications or to compete with existing semiconductors, the need for a more reliable and fully ionised dopant is paramount. This thesis describes a unique dopant discovered within the growth surface of PCD films. This dopant is related to hydrogen which arises during the growth of diamond films. The aim of this study is to characterise and identify possible applications for this form of dopant. The mechanism for carrier generation remains unknown and based on the experimental results in this work, a model is proposed. The Hall measurements conducted on this conductive layer revealed a p-type nature with promising properties for electronic device application. A more detail study based on electrical and surface science methods were carried out to identify the stability and operating conditions for this dopant. The properties of metal-semiconductor contacts on these surfaces were investigated. The fundamental knowledge

  4. Deep level centers in electron-irradiated silicon crystals doped with copper at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Yarykin, Nikolai [Institute of Microelectronics Technology, RAS, Chernogolovka (Russian Federation); Weber, Joerg [Technische Universitaet Dresden (Germany)

    2017-07-15

    The effect of bombardment with energetic particles on the deep-level spectrum of copper-contaminated silicon wafers is studied by space charge spectroscopy methods. The p-type FZ-Si wafers were doped with copper in the temperature range of 645-750 C and then irradiated with the 10{sup 15} cm{sup -2} fluence of 5 MeV electrons at room temperature. Only the mobile Cu{sub i} species and the Cu{sub PL} centers are detected in significant concentrations in the non-irradiated Cu-doped wafers. The properties of the irradiated samples are found to qualitatively depend on the copper in-diffusion temperature T{sub diff}. For T{sub diff} > 700 C, the irradiation partially reduces the Cu{sub i} concentration and introduces additional Cu{sub PL} centers while no standard radiation defects are detected. If T{sub diff} was below ∝700 C, the irradiation totally removes the mobile Cu{sub i} species. Instead, the standard radiation defects and their complexes with copper appear in the deep-level spectrum. A model for the defects reaction scheme during the irradiation is derived and discussed. DLTS spectrum of the Cu-contaminated and then irradiated silicon qualitatively depends on the copper in-diffusion temperature. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Phosphorus Doping Using Electron Cyclotron Resonance Plasma for Large-Area Polycrystalline Silicon Thin Film Transistors

    Science.gov (United States)

    Kakinuma, Hiroaki; Mohri, Mikio; Tsuruoka, Taiji

    1994-01-01

    We have investigated phosphorus doping using an electron cyclotron resonance (ECR) plasma, for application to the poly-Si driving circuits of liquid crystal displays or image sensors. The PH3/He was ionized and accelerated to poly-Si and c-Si substrates with a self bias of -220 V. The P concentration, as detected by secondary ion mass spectroscopy (SIMS), is ˜5×1021 cm-3 at the surface, which decayed to ˜1017 cm-3 within 50 100 nm depth. The surface is found to be etched during doping. The etching is restored by adding a small amount of SiH4 and the sheet resistance R s decreases. The optimized as-irradiated R s is ˜ 1× 105 Ω/\\Box and 1.7× 102 Ω/\\Box for poly-Si and (110) c-Si, respectively. The dependence of R s on the substrates and the anomalous diffusion constants derived from SIMS are also discussed.

  6. Electronic structure and p-type doping of ZnSnN2

    Science.gov (United States)

    Wang, Tianshi; Janotti, Anderson; Ni, Chaoying

    ZnSnN2 is a promising solar-cell absorber material composed of earth abundant elements. Little is known about doping, defects, and how the valence and conduction bands in this material align with the bands in other semiconductors. Using density functional theory with the the Heyd-Scuseria-Ernzerhof hybrid functional (HSE06), we investigate the electronic structure of ZnSnN2, its band alignment to other semiconductors, such as GaN and ZnO, the possibility of p-type doping, and the possible causes of the observed unintentional n-type conductivity. We find that the position of the valence-band maximum of ZnSnN2 is 0.55 eV higher than that of GaN, yet the conduction-band minimum is close to that in ZnO. As possible p-type dopants, we explore Li, Na, and K substituting on the Zn site. Finally, we discuss the cause of unintentional n-type conductivity by analyzing the position of the conduction-band minimum with respect to that of GaN and ZnO.

  7. Structure and properties of electron-doped Ca1-xSmxMnO3 nanoparticles

    International Nuclear Information System (INIS)

    Sanmathi, C.S.; Retoux, R.; Singh, M.P.; Noudem, J.

    2009-01-01

    In this paper, we report the structural and magnetic properties of electron-doped Ca 1-x Sm x MnO 3 (CSM) nanoparticles. The samarium's composition 'x' was varied from 0 to 0.2 with the special attention up to 0.05. Spherical 60-70 nm polycrystalline CSM nanoparticles were synthesised by chemical co-precipitation technique. Doping of Sm 3+ in antiferromagnetic CaMnO 3 has drastically altered its magnetic behavior due to the formation of ferromagnetic clusters. For example, the CSM powder with x = 0.04 displays about 115 K magnetic Curie temperature and about 0.1 emu/mole saturation magnetization. Physical properties of our nano-CSM powders are also compared with identical bulk-samples. To understand the differences, we invoked the intra-grain and inter-grain magnetic coupling process that facilitates to enhance their ferromagnetic behaviors. Unlike the bulk samples, such magnetic couplings in nanoparticles are favored by the presence of low-level crystal and interfacial defects

  8. Structural, magnetic and electronic structural properties of Mn doped CeO2 nanoparticles

    Science.gov (United States)

    Kumari, Kavita; Vij, Ankush; Hashim, Mohd.; Chae, K. H.; Kumar, Shalendra

    2018-05-01

    Nanoparticles of Ce1-xMnxO2, (x=0.0, 0.01, and 0.05) have been synthesized by using co-precipitation method, and then characterized by x-ray diffraction (XRD), transmission electron microscopy (TEM), near edge x-ray absorption fine structure (NEXAFS) spectroscopy and dc magnetization measurements. XRD results clearly showed that the all the samples have single phase nature and exclude the presence of any secondary phase. The average particle size calculated using XRD TEM measurements found to decrease with increase in Mn doping in the range of 4.0 - 9.0 nm. The structural parameters such as strain, interplaner distance and lattice parameter is observed to decrease with increase in doping. The morphology of Ce1-xMnxO2 nanoparticles measured using TEM micrographs indicate that nanoparticle have spherical shape morphology. Magnetic hysteresis curve for Ce1-xMnxO2, (x = 0.0, 0.01, and 0.05) confirms the ferromagnetic ordering room temperature. The value of saturation magnetization is observed to decrease with increase in temperature from 10 K to 300 K. The NEXAFS spectra measured at Ce M4,5 edge reveals that Ce-ions are in +4 valance state.

  9. Correlation between modulation structure and electronic inhomogeneity on Pb-doped Bi-2212 single crystals

    International Nuclear Information System (INIS)

    Sugimoto, A.; Kashiwaya, S.; Eisaki, H.; Yamaguchi, H.; Oka, K.; Kashiwaya, H.; Tsuchiura, H.; Tanaka, Y.

    2005-01-01

    The correlation between nanometer-size electronic states and surface structure is investigated by scanning tunneling microscopy/spectroscopy (STM/S) on Pb-doped Bi 2-x Pb x Sr 2 CaCu2O 8+y (Pb-Bi-2212) single crystals. The advantage of the Pb-Bi-2212 samples is that the modulation structure can be totally or locally suppressed depending on the Pb contents and annealing conditions. The superconducting gap (Δ) distribution on modulated Pb-Bi-2212 samples showed the lack of correlation with modulation structure except a slight reduction of superconducting island size for the b-axis direction. On the other hand, the optimal doped Pb-Bi-2212 (x = 0.6) samples obtained by reduced-annealing showed totally non-modulated structure in topography, however, the spatial distribution of Δ still showed inhomogeneity of which features were quite similar to those of modulated samples. These results suggest that the modulation structure is not the dominant origin of inhomogeneity although it modifies the streaky Δ structure sub-dominantly. From the gap structure variation around the border of narrow gap and broad gap regions, a trend of the coexistence of two separated phases i.e., superconducting phase and pseudogap like phase, is detected

  10. The structural, electronic and optical properties of Nd doped ZnO using first-principles calculations

    Science.gov (United States)

    Wen, Jun-Qing; Zhang, Jian-Min; Chen, Guo-Xiang; Wu, Hua; Yang, Xu

    2018-04-01

    The density functional theory calculations using general gradient approximation (GGA) applying Perdew-Burke-Ernzerhof (PBE) as correlation functional have been systematically performed to research the formation energy, the electronic structures, band structures, total and partial DOS, and optical properties of Nd doping ZnO with the content from 6.25% to 12.5%. The formation energies are negative for both models, which show that two structures are energetically stable. Nd doping ZnO crystal is found to be a direct band gap semiconductor and Fermi level shifts upward into conduction band, which show the properties of n-type semiconductor. Band structures are more compact after Nd doping ZnO, implying that Nd doping induces the strong interaction between different atoms. Nd doping ZnO crystal presents occupied states at near Fermi level, which mainly comes from the Nd 4f orbital. The calculated optical properties imply that Nd doping causes a red-shift of absorption peaks, and enhances the absorption of the visible light.

  11. Electron, hole and exciton self-trapping in germanium doped silica glass from DFT calculations with self-interaction correction

    International Nuclear Information System (INIS)

    Du Jincheng; Rene Corrales, L.; Tsemekhman, Kiril; Bylaska, Eric J.

    2007-01-01

    Density functional theory (DFT) calculations were employed to understand the refractive index change in germanium doped silica glasses for the trapped states of electronic excitations induced by UV irradiation. Local structure relaxation and excess electron density distribution were calculated upon self-trapping of an excess electron, hole, and exciton in germanium doped silica glass. The results show that both the trapped exciton and excess electron are highly localized on germanium ion and, to some extent, on its oxygen neighbors. Exciton self-trapping is found to lead to the formation of a Ge E' center and a non-bridging hole center. Electron trapping changes the GeO 4 tetrahedron structure into trigonal bi-pyramid with the majority of the excess electron density located along the equatorial line. The self-trapped hole is localized on bridging oxygen ions that are not coordinated to germanium atoms that lead to elongation of the Si-O bonds and change of the Si-O-Si bond angles. We carried out a comparative study of standard DFT versus DFT with a hybrid PBE0 exchange and correlation functional. The results show that the two methods give qualitatively similar relaxed structure and charge distribution for electron and exciton trapping in germanium doped silica glass; however, only the PBE0 functional produces the self-trapped hole

  12. Electronic transport in heavily doped Ag/n-Si composite films

    Directory of Open Access Journals (Sweden)

    Clayton W. Bates Jr.

    2013-10-01

    Full Text Available Hall measurements characterized Ag/n-Si composite films 1 micron thick produced by magnetron co-sputtering onto high resistivity Si (111 substrates at 550°C. The targets were Ag and n-type Si doped with 3 × 1019/cm3 of antimony. Films were prepared with 13, 16 and 22 at. % Ag and measured over a temperature range 77–500°K. Conduction takes place at low temperatures by variable rang hopping in localized states at the Fermi level and by thermal activation over grain boundaries at higher temperatures. The Log Resistivity vs 1/kT curves for the three Ag concentrations vary in a similar manner, but decrease in magnitude with increasing Ag due to the smaller number of grain boundaries between Ag nanoparticles occurring with increasing Ag concentration. At low temperatures Hall mobilities are essentially independent of temperature as the carrier densities for the three Ag concentrations are constant from 77 to slightly under 300°K with resistivities varying by small amounts. The mobilities at all Ag concentrations increase with temperature and approach each other as the effects of grain boundaries become less important. This work presents for the first time the effects of metal particles embedded in a semiconductor on the transport properties of carriers in the semiconductor. Though these effects are for a given average particle size most of the results are expected to hold over a range of particle sizes. Free electrons produced in films containing 13 and 16 at. % Ag result in concentrations of 1.5 × 1019/cm3, one half the antimony doping, while those with 22 at. % Ag, the carrier concentrations are three orders of magnitude higher. These constant carrier concentrations are due to the metal-insulator transition that occurs in doped crystalline and polycrystalline silicon for carrier densities nc >3.9 × 1018/cm3. The three orders of magnitude higher carrier concentration produced in films with 22 at. % Ag is argued to be due to doping of the Si

  13. Stability and Electronic Properties of TiO2 Nanostructures With and Without B and N Doping

    DEFF Research Database (Denmark)

    Mowbray, Duncan; Martinez, Jose Ignacio; García Lastra, Juan Maria

    2009-01-01

    We address one of the main challenges to TiO2 photocatalysis, namely band gap narrowing, by combining nanostructural changes with doping. With this aim we compare TiO2’s electronic properties for small 0D clusters, 1D nanorods and nanotubes, 2D layers, and 3D surface and bulk phases using differe...

  14. Visible light induced electron transfer process over nitrogen doped TiO2 nanocrystals prepared by oxidation of titanium nitride

    International Nuclear Information System (INIS)

    Wu Zhongbiao; Dong Fan; Zhao Weirong; Guo Sen

    2008-01-01

    Nitrogen doped TiO 2 nanocrystals with anatase and rutile mixed phases were prepared by incomplete oxidation of titanium nitride at different temperatures. The as-prepared samples were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HRTEM), core level X-ray photoelectron spectroscopy (CL XPS), valence band X-ray photoelectron spectroscopy (VB XPS), UV-vis diffuse reflectance spectra (UV-vis DRS), and visible light excited photoluminescence (PL). The photocatalytic activity was evaluated for photocatalytic degradation of toluene in gas phase under visible light irradiation. The visible light absorption and photoactivities of these nitrogen doped TiO 2 nanocrystals can be clearly attributed to the change of the additional electronic (N - ) states above the valence band of TiO 2 modified by N dopant as revealed by the VB XPS and visible light induced PL. A band gap structure model was established to explain the electron transfer process over nitrogen doped TiO 2 nanocrystals under visible light irradiation, which was consistent with the previous theoretical and experimental results. This model can also be applied to understand visible light induced photocatalysis over other nonmetal doped TiO 2

  15. Dual structure in the charge excitation spectrum of electron-doped cuprates

    Science.gov (United States)

    Bejas, Matías; Yamase, Hiroyuki; Greco, Andrés

    2017-12-01

    Motivated by the recent resonant x-ray scattering (RXS) and resonant inelastic x-ray scattering (RIXS) experiments for electron-doped cuprates, we study the charge excitation spectrum in a layered t -J model with the long-range Coulomb interaction. We show that the spectrum is not dominated by a specific type of charge excitations, but by different kinds of charge fluctuations, and is characterized by a dual structure in the energy space. Low-energy charge excitations correspond to various types of bond-charge fluctuations driven by the exchange term (J term), whereas high-energy charge excitations are due to usual on-site charge fluctuations and correspond to plasmon excitations above the particle-hole continuum. The interlayer coupling, which is frequently neglected in many theoretical studies, is particularly important to the high-energy charge excitations.

  16. Electrical, optical and photoelectric properties of cadmium sulfide monocrystals doped by indium and irradiated by electrons

    CERN Document Server

    Davidyuk, G E; Manzhara, V S

    2002-01-01

    One studied effect of irradiation by E = 1.2 MeV energy and PHI = 2 x 10 sup 1 sup 7 cm sup - sup 2 dose fast electrons on electrical, optical and photoelectrical CdS single-crystals doped by In. On the basis of analysis of the experimental results one makes conclusions about decomposition and, in this case, indium atoms occurring in cation sublattice nodes are knocked out by cadmium atoms. In CdS:In irradiated specimens one detected new centres of slow recombination with occurrence of maximums of photoconductivity optical suppression within lambda sub M sub sub 1 = 0.75 mu m and lambda sub M sub sub 2 = 1.03 mu m range. It is assumed that complexes containing cadmium vacancies and indium atoms are responsible for recombination new centres

  17. The electronic structure and ferromagnetism of TM (TM=V, Cr, and Mn)-doped BN(5, 5) nanotube: A first-principles study

    International Nuclear Information System (INIS)

    He, K.H.; Zheng, G.; Chen, G.; Wan, M.; Ji, G.F.

    2008-01-01

    We study the electronic structure and ferromagnetism of V-, Cr-, and Mn-doped single-wall BN(5, 5) nanotube by using polarized spin calculations within first principles. The optimized structures show that the transition-metal atoms move outwards and the calculated electronic properties demonstrate that the isolated V-, Cr-, and Mn-doped BN(5, 5) nanotubes show half-metallicity. The total ferromagnetic moments are 2μ B , 3.02μ B , and 3.98μ B for V-, Cr-, and Mn-doped BN(5, 5), respectively. The study suggests that such transition-metal (TM)-doped nanotubes may be useful in spintronics and nanomagnets

  18. Towards understanding the electronic structure of Fe-doped CeO2 nanoparticles with X-ray spectroscopy.

    Science.gov (United States)

    Wang, Wei-Cheng; Chen, Shih-Yun; Glans, Per-Anders; Guo, Jinghua; Chen, Ren-Jie; Fong, Kang-Wei; Chen, Chi-Liang; Gloter, Alexandre; Chang, Ching-Lin; Chan, Ting-Shan; Chen, Jin-Ming; Lee, Jyh-Fu; Dong, Chung-Li

    2013-09-21

    This study reports on the electronic structure of Fe-doped CeO2 nanoparticles (NPs), determined by coupled X-ray absorption spectroscopy and X-ray emission spectroscopy. A comparison of the local electronic structure around the Ce site with that around the Fe site indicates that the Fe substitutes for the Ce. The oxygen K-edge spectra that originated from the hybridization between cerium 4f and oxygen 2p states are sensitive to the oxidation state and depend strongly on the concentration of Fe doping. The Ce M(4,5)-edges and the Fe L(2,3)-edges reveal the variations of the charge states of Ce and Fe upon doping, respectively. The band gap is further obtained from the combined absorption-emission spectrum and decreased upon Fe doping, implying Fe doping introduces vacancies. The oxygen vacancies are induced by Fe doping and the spectrum reveals the charge transfer between Fe and Ce. Fe(3+) doping has two major effects on the formation of ferromagnetism in CeO2 nanoparticles. The first, at an Fe content of below 5%, is that the formation of Fe(3+)-Vo-Ce(3+) introduces oxygen deficiencies favoring ferromagnetism. The other, at an Fe content of over 5%, is the formation of Fe(3+)-Vo-Fe(3+), which favors antiferromagnetism, reducing the Ms. The defect structures Fe(3+)-Vo-Ce(3+) and Fe(3+)-Vo-Fe(3+) are crucial to the magnetism in these NPs and the change in Ms can be described as the effect of competitive interactions of magnetic polarons and paired ions.

  19. Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

    Energy Technology Data Exchange (ETDEWEB)

    Li, X.; Nilsson, D.; Danielsson, Ö.; Pedersen, H.; Janzén, E.; Forsberg, U. [Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping 58183 (Sweden); Bergsten, J.; Rorsman, N. [Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg 41296 (Sweden)

    2015-12-28

    The creation of a semi insulating (SI) buffer layer in AlGaN/GaN High Electron Mobility Transistor (HEMT) devices is crucial for preventing a current path beneath the two-dimensional electron gas (2DEG). In this investigation, we evaluate the use of a gaseous carbon gas precursor, propane, for creating a SI GaN buffer layer in a HEMT structure. The carbon doped profile, using propane gas, is a two stepped profile with a high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) epitaxial layer closest to the substrate and a lower doped layer (3 × 10{sup 16 }cm{sup −3}) closest to the 2DEG channel. Secondary Ion Mass Spectrometry measurement shows a uniform incorporation versus depth, and no memory effect from carbon doping can be seen. The high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) does not influence the surface morphology, and a roughness root-mean-square value of 0.43 nm is obtained from Atomic Force Microscopy. High resolution X-ray diffraction measurements show very sharp peaks and no structural degradation can be seen related to the heavy carbon doped layer. HEMTs are fabricated and show an extremely low drain induced barrier lowering value of 0.1 mV/V, demonstrating an excellent buffer isolation. The carbon doped GaN buffer layer using propane gas is compared to samples using carbon from the trimethylgallium molecule, showing equally low leakage currents, demonstrating the capability of growing highly resistive buffer layers using a gaseous carbon source.

  20. Structure, electronic properties, luminescence and chromaticity investigations of rare earth doped KMgBO{sub 3} phosphors

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, Jianghui; Cheng, Qijin [School of Energy Research, Xiamen University, Xiamen 361005 (China); Wu, Shunqing [Department of Physics, Xiamen University, Xiamen, 361005 (China); Zhuang, Yixi [College of Materials, Xiamen University, Xiamen 361005 (China); Guo, Ziquan; Lu, Yijun [Department of Electronic Science, Fujian Engineering Research Center for Solid-state Lighting, Xiamen University, Xiamen 361005 (China); Chen, Chao, E-mail: cchen@xmu.edu.cn [School of Energy Research, Xiamen University, Xiamen 361005 (China); Department of Physics, Xiamen University, Xiamen, 361005 (China); Department of Electronic Science, Fujian Engineering Research Center for Solid-state Lighting, Xiamen University, Xiamen 361005 (China)

    2015-09-01

    In this work, the optimization of the geometry and the electronic properties of the host matrix KMgBO{sub 3} were investigated using density functional theory, and the comprehensive photoluminescence and chromaticity properties on five rare earth ion-doped (RE = Ce{sup 3+}, Tm{sup 3+}, Tb{sup 3+}, Eu{sup 3+}, Dy{sup 3+}) KMgBO{sub 3} phosphors were also studied. By introducing RE ions into the KMgBO{sub 3} host, excellent purple, blue, green, red and white emitting light could be obtained under the near-ultraviolet light excitation. The results suggest that rare earth doped KMgBO{sub 3} phosphors are potential luminescence materials for the application in the near-ultraviolet white light-emitting diodes. - Highlights: • The electronic properties of the host matrix KMgBO{sub 3} were investigated. • The PL properties on rare earth ions doped KMgBO{sub 3} phosphors were studied. • The chromaticity properties on rare earth ions doped KMgBO{sub 3} samples were studied. • Tm{sup 3+} and Eu{sup 3+} doped KMgBO{sub 3} samples show higher color purity than commercial phosphors.

  1. A DFT study of the effects of Sc doping on electronic and optical properties of CdS nanoparticles

    Directory of Open Access Journals (Sweden)

    Ur Rehman Shafiq

    2015-12-01

    Full Text Available In the present work a systematic study was carried out to understand the influence of Sc doping on electronic and optical properties of CdS nanoparticles. The geometry optimization and symmetry computation for CdS and Sc doped CdS nanoparticles using Density Functional Theory (DFT on B3LYP level with the QZ4P for Cd and DZ2P for sulphur and Sc were performed by Amsterdam Density Functional (ADF. The results show that HOMO-LUMO gap as well as electronic and optical properties of CdS clusters vary with Sc doping. The HOMO-LUMO gap is affected by the dopant and its value decreases to 0.6 eV. Through considering the numerical integration scheme in the ADF package, we investigated different vibrational modes and our calculated Raman and IR spectra are consistent with the reported result. The calculated IR and Raman peaks of CdS and Sc doped CdS clusters were in the range of 100 to 289 cm−1, 60 cm−1 to 350 cm−1 and 99 cm−1 to 282 cm−1, 60 cm−1 to 350 cm−1, respectively, which was also confirmed by experiment as well as a blue shift occurrence. Subsequently, for deeper research of pure and doped CdS clusters, their absorption spectra were calculated using time-dependent DFT method.

  2. Competing pseudogap and impurity effects on the normal-state specific heat properties of cuprate superconductors

    Science.gov (United States)

    Dzhumanov, S.; Karimboev, E. X.

    2014-07-01

    In this paper, we show that the pseudogap in the excitation spectra of high-Tc cuprates together with the impurity phase and charge inhomogeneity plays key roles in determining the essential features of their anomalous specific heat properties observed above Tc. We consider the doped cuprate superconductor as a multi-carrier model system (which consists of intrinsic and extrinsic polarons and pre-formed bosonic Cooper pairs) and study the competing pseudogap and impurity effects on the normal-state electronic specific heat of high-Tc cuprates taking into account charge inhomogeneities. We argue that unconventional electron-phonon interactions are responsible for the precursor Cooper pairing in the polaronic band below a mean-field temperature T∗ and the existence of a pseudogap above Tc in the cuprates. The electronic specific heat Ce(T) of doped cuprates below T∗ is calculated taking into account three contributions coming from the excited components of Cooper pairs, the ideal Bose-gas of incoherent Cooper pairs and the unpaired carriers in the impurity band. Above T∗, two contributions to Ce(T) coming from the unpaired intrinsic and extrinsic polarons are calculated within the two-component degenerate Fermi-gas model. By comparing our results with the experimental Ce(T) data obtained for La- and Y-based cuprates, we find that the observed behaviors of Ce(T) (below and above T∗) are similar to the calculated results for Ce(T) and the BCS-type jumps of Ce(T) at T∗ may be depressed by the impurity effects and may become more or less pronounced BCS-type anomalies in Ce(T) .

  3. LO-phonon and plasmon coupling in neutron-transmutation-doped GaAs

    International Nuclear Information System (INIS)

    Kuriyama, K.; Sakai, K.; Okada, M.

    1996-01-01

    Coupling between the longitudinal-optic (LO) phonon mode and the longitudinal plasma mode in neutron-transmutation-doped (NTD) semi-insulating GaAs was studied using Raman-scattering spectroscopy and a Fourier-transform infrared spectrometer. When the electron concentration due to the activation of NTD impurities (Ge Ga and Se As ) approaches ∼8x10 16 cm -3 , the LO-phonon endash plasmon coupling is observed. This behavior is consistent with the free-electron absorption due to the activation of NTD impurities in samples annealed above 600 degree C. copyright 1996 The American Physical Society

  4. Nearest-neighbor Kitaev exchange blocked by charge order in electron doped $\\alpha$-RuCl$_{3}$

    OpenAIRE

    Koitzsch, A.; Habenicht, C.; Mueller, E.; Knupfer, M.; Buechner, B.; Kretschmer, S.; Richter, M.; Brink, J. van den; Boerrnert, F.; Nowak, D.; Isaeva, A.; Doert, Th.

    2017-01-01

    A quantum spin-liquid might be realized in $\\alpha$-RuCl$_{3}$, a honeycomb-lattice magnetic material with substantial spin-orbit coupling. Moreover, $\\alpha$-RuCl$_{3}$ is a Mott insulator, which implies the possibility that novel exotic phases occur upon doping. Here, we study the electronic structure of this material when intercalated with potassium by photoemission spectroscopy, electron energy loss spectroscopy, and density functional theory calculations. We obtain a stable stoichiometry...

  5. Electron-beam welding of thorium-doped iridium alloy sheets

    International Nuclear Information System (INIS)

    David, S.A.; Liu, C.T.; Hudson, J.D.

    1979-04-01

    Modified iridium alloys containing 100 ppM Th were found to be very susceptible to hot-cracking during gas tungsten-arc and electron-beam welding. However, the electron-beam welding process showed greater promise of success in welding these alloys, in particular Ir--0.3% W doped with 200 ppM Th and 50 ppM Al. The weldability of this particular alloy was extremely sensitive to the welding parameters, such as beam focus condition and welding speed, and the resulting fusion zone structure. At low speed successful electron-beam welds were made over a narrow range of beam focus conditions. However, at high speeds successful welds can be made over an extended range of focus conditions. The fusion zone grain structure is a strong function of welding speed and focus condition, as well. In the welds that showed hot-cracking, a region of positive segregation of thorium was identified at the fusion boundary. This highly thorium-segregated region seems to act as a potential source for the nucleation of a liquation crack, which later grows as a centerline crack

  6. Electronic and magnetic properties of 3d transition metal-doped strontium clusters: Prospective magnetic superatoms

    International Nuclear Information System (INIS)

    Chauhan, Vikas; Sen, Prasenjit

    2013-01-01

    Highlights: • Structural, electronic and magnetic properties of TM-Sr clusters are studied using DFT methods. • CrSr 9 and MnSr 10 have enhanced stability in the CrSr n and MnSrn series. • These two clusters behave as magnetic superatoms. • A qualitative understanding of the magnetic coupling between two superatom units is offered. • Reactivity of these superatoms to molecular oxygen also studied. - Abstract: Structural, electronic and magnetic properties of 3d transition metal doped strontium clusters are studied using first-principles electronic structure methods based on density functional theory. Clusters with enhanced kinetic and thermodynamic stability are identified by studying their hardness, second order energy difference and adiabatic spin excitation energy. CrSr 9 and MnSr 10 are found to have enhanced stability. They retain their structural identities in assemblies, and are classified as magnetic superatoms. A qualitative understanding of the magnetic coupling between two cluster units is arrived at. Reactivity of these superatoms with O 2 molecule is also studied. Prospects for using these magnetic superatoms in applications are discussed

  7. Electron-plasmon and electron-phonon satellites in the angle-resolved photoelectron spectra of n -doped anatase TiO2

    Science.gov (United States)

    Caruso, Fabio; Verdi, Carla; Poncé, Samuel; Giustino, Feliciano

    2018-04-01

    We develop a first-principles approach based on many-body perturbation theory to investigate the effects of the interaction between electrons and carrier plasmons on the electronic properties of highly doped semiconductors and oxides. Through the evaluation of the electron self-energy, we account simultaneously for electron-plasmon and electron-phonon coupling in theoretical calculations of angle-resolved photoemission spectra, electron linewidths, and relaxation times. We apply this methodology to electron-doped anatase TiO2 as an illustrative example. The simulated spectra indicate that electron-plasmon coupling in TiO2 underpins the formation of satellites at energies comparable to those of polaronic spectral features. At variance with phonons, however, the energy of plasmons and their spectral fingerprints depends strongly on the carrier concentration, revealing a complex interplay between plasmon and phonon satellites. The electron-plasmon interaction accounts for approximately 40% of the total electron-boson interaction strength, and it is key to improve the agreement with measured quasiparticle spectra.

  8. Defect formation in heavily doped Si upon irradiation

    International Nuclear Information System (INIS)

    Gubskaya, V.I.; Kuchinskii, P.V.; Lomako, V.M.

    1981-01-01

    The rates of the carrier removal and radiation defect introduction into n- and p-Si in the concentration range of 10 14 to 10 17 cm -3 upon 7-MeV-electron irradiation have been studied. The spectrum of the vacancy-type defects, defining the carrier removal rate in lightly doped crystals has been found. With doping level increase the carrier removal rate grows irrespective of conductivity type, and at n 0 , p 0 > 10 17 cm -3 is close to the total displacement number. At the same time a decrease in the introduction rate of the known vacancy-type defects is observed. x It is shown that a considerable growth of the carrier removal rate is defined neither by introduction of shallow compensating centers, nor by change in the primary defect charge state. It is suggested that at high doping impurity concentrations compensation in Si is due to the introduction of complexes doping impurity-interstitial or (impurity atom-interstitial) + vacancy, which give deep levels. (author)

  9. Isotope effect with energy-dependent density of states and impurities

    International Nuclear Information System (INIS)

    Williams, P.J.; Carbotte, J.P.

    1992-01-01

    We have calculated the total isotope coefficient β in a model where there is energy-dependent structure in the electronic density of states. We model the structure with a simple Lorentzian. In our calculation, doping has the effect of shifting the Fermi level and broadening the structure in the density of states. We have treated the dopants both as normal and as magnetic impurities. The asymmetry observed in the experimental data is found in our results. However, the complete range of values observed is difficult to reproduce. We question also whether the shifts in Fermi level required in such models are reasonable

  10. Effects of Nb impurity on orthorhombic PbZrO{sub 3} crystals

    Energy Technology Data Exchange (ETDEWEB)

    Rivera, Richard; Stashans, Arvids [Grupo de FisicoquImica de Materiales, Instituto de Quimica Aplicada, Universidad Tecnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador)], E-mail: arvids@utpl.edu.ec

    2008-10-15

    A study of Nb doping in lead zirconate (PbZrO{sub 3}) has been carried out by using a quantum-chemical method developed for crystals and a periodic supercell model. One of the Zr atoms was replaced by an Nb atom in the supercell consisting of 80 atoms. The obtained geometry optimization for the defective region points to defect-outward atomic movements, which are accompanied by some reduction of atomic charges. It is observed that an extra electron imposed by the Nb impurity is transferred to the conduction band of the material and contributes to the n-type electrical conductivity, explaining indirectly some of the experimental observations.

  11. Effects of Nb impurity on orthorhombic PbZrO3 crystals

    International Nuclear Information System (INIS)

    Rivera, Richard; Stashans, Arvids

    2008-01-01

    A study of Nb doping in lead zirconate (PbZrO 3 ) has been carried out by using a quantum-chemical method developed for crystals and a periodic supercell model. One of the Zr atoms was replaced by an Nb atom in the supercell consisting of 80 atoms. The obtained geometry optimization for the defective region points to defect-outward atomic movements, which are accompanied by some reduction of atomic charges. It is observed that an extra electron imposed by the Nb impurity is transferred to the conduction band of the material and contributes to the n-type electrical conductivity, explaining indirectly some of the experimental observations.

  12. Electron paramagnetic resonance and Raman spectroscopy studies on carbon-doped MgB2 superconductor nanomaterials

    International Nuclear Information System (INIS)

    Bateni, Ali; Somer, Mehmet; Erdem, Emre; Repp, Sergej; Weber, Stefan; Acar, Selcuk; Kokal, Ilkin; Häßler, Wolfgang

    2015-01-01

    Undoped and carbon-doped magnesium diboride (MgB 2 ) samples were synthesized using two sets of mixtures prepared from the precursors, amorphous nanoboron, and as-received amorphous carbon-doped nanoboron. The microscopic defect structures of carbon-doped MgB 2 samples were systematically investigated using X-ray powder diffraction, Raman and electron paramagnetic resonance spectroscopy. Mg vacancies and C-related dangling-bond active centers could be distinguished, and sp 3 -hybridized carbon radicals were detected. A strong reduction in the critical temperature T c was observed due to defects and crystal distortion. The symmetry effect of the latter is also reflected on the vibrational modes in the Raman spectra

  13. Electron paramagnetic resonance and Raman spectroscopy studies on carbon-doped MgB{sub 2} superconductor nanomaterials

    Energy Technology Data Exchange (ETDEWEB)

    Bateni, Ali; Somer, Mehmet, E-mail: emre.erdem@physchem.uni-freiburg.de, E-mail: msomer@ku.edu.tr [Department of Chemistry, Koc University, RumelifeneriYolu, Sariyer, Istanbul (Turkey); Erdem, Emre, E-mail: emre.erdem@physchem.uni-freiburg.de, E-mail: msomer@ku.edu.tr; Repp, Sergej; Weber, Stefan [Institut für Physikalische Chemie, Universität Freiburg, Albertstr. 21, 79104 Freiburg (Germany); Acar, Selcuk; Kokal, Ilkin [Pavezyum Kimya Sanayi Dış Ticaret LTD. ŞTI., Tuzla, Istanbul (Turkey); Häßler, Wolfgang [Leibniz Institute for Solid State and Materials Research Dresden (IFW), P.O. Box 270116, 01171 Dresden (Germany)

    2015-04-21

    Undoped and carbon-doped magnesium diboride (MgB{sub 2}) samples were synthesized using two sets of mixtures prepared from the precursors, amorphous nanoboron, and as-received amorphous carbon-doped nanoboron. The microscopic defect structures of carbon-doped MgB{sub 2} samples were systematically investigated using X-ray powder diffraction, Raman and electron paramagnetic resonance spectroscopy. Mg vacancies and C-related dangling-bond active centers could be distinguished, and sp{sup 3}-hybridized carbon radicals were detected. A strong reduction in the critical temperature T{sub c} was observed due to defects and crystal distortion. The symmetry effect of the latter is also reflected on the vibrational modes in the Raman spectra.

  14. Tungsten oxides. I. Effects of oxygen vacancies and doping on electronic and optical properties of different phases of WO3

    Science.gov (United States)

    Migas, D. B.; Shaposhnikov, V. L.; Rodin, V. N.; Borisenko, V. E.

    2010-11-01

    In this part we present results of our ab initio calculations indicating that dispersion of the bands near the gap region for different phases of WO3 (namely, ɛ-WO3, δ-WO3, γ-WO3, β-WO3, orth-WO3, α-WO3, and hex-WO3) is rather close. The rapid increase in the absorption coefficient starts at the lower energy range for α-WO3 and hex-WO3 than for the other phases in accordance with the calculated band gaps. An oxygen vacancy has turned out to decrease the gap by 0.50 eV and to shift the absorption coefficient to the lower energy range in the room temperature γ-WO3 phase. We have also traced changes caused by molybdenum and sulfur doping of γ-WO3. Only sulfur doped γ-WO3 has been revealed to display the formation of the impurity band along with a sizable reduction in the gap and the shift in the absorption coefficient to the lower energy range.

  15. Habit modification of potassium acid phthalate (KAP) single crystals by impurities

    Science.gov (United States)

    Murugakoothan, P.; Mohan Kumar, R.; Ushasree, P. M.; Jayavel, R.; Dhanasekaran, R.; Ramasamy, P.

    1999-12-01

    Nonlinear optical materials potassium dihydrogen phosphate (KDP), urea and L-arginine phosphate (LAP)-doped KAP crystals were grown by the slow cooling method. The LAP-doped crystals show pronounced habit modification compared to KDP and urea doping. The effect of these impurities on growth kinetics, surface morphology, habit modification, structure, optical and mechanical properties have been studied. Among the three impurities, urea doping yields high mechanical stability and optical transmission and for KDP and LAP doping there is a decrease in optical transmission.

  16. First-principles calculation of the structure and electronic properties of Fe-substituted Bi2Ti2O7

    Science.gov (United States)

    Huang, Jin-Dou; Zhang, Zhenyi; Lin, Feng; Dong, Bin

    2017-12-01

    We performed first-principles calculations to investigate the formation energy, geometry structure, and electronic property of Fe-doped Bi2Ti2O7 systems with different Fe doping content. The calculated formation energies indicate that the substitutional configurations of Fe-doping Bi2Ti2O7 are easy to obtain under O-rich growth condition, but their thermodynamic stability decreases with the increase of Fe content. The calculated spin-resolved density of states and band structures indicate that the introduction of Fe into Bi2Ti2O7 brings high spin polarization. The spin-down impurity levels in Fe x Bi2-x Ti2O7 and spin-up impurity levels in Fe x Bi2Ti2-x O7 systems locate in the bottom of conduction band and narrow the band gap significantly, thus leading to the absorption of visible light. Interestingly, the impurity states in Fe x Bi2-x Ti2O7 are the efficient separation center of photogenerated electron and hole, and less affected by Fe doping content, in comparison, the levels of impurity band in Fe x Bi2Ti2-x O7 systems are largely effected by the Fe doping content, and high Fe doping content is the key factor to improve the separating rate of photogenerated electron and hole.

  17. Linear temperature behavior of thermopower and strong electron-electron scattering in thick F-doped SnO2 films

    Science.gov (United States)

    Lang, Wen-Jing; Li, Zhi-Qing

    2014-07-01

    Both the semi-classical and quantum transport properties of F-doped SnO2 thick films (˜1 μm) were investigated experimentally. We found that the resistivity caused by the thermal phonons obeys Bloch-Grüneisen law from ˜90 to 300 K, while only the diffusive thermopower, which varies linearly with temperature from 300 down to 10 K, can be observed. The phonon-drag thermopower is completely suppressed due to the long electron-phonon relaxation time in the compound. These observations, together with the fact that the carrier concentration has negligible temperature dependence, indicate that the conduction electrons in F-doped SnO2 films possess free-electron-like characteristics. At low temperatures, the electron-electron scattering dominates over the electron-phonon scattering and governs the inelastic scattering process. The theoretical predications of scattering rates of large- and small-energy-transfer electron-electron scattering processes, which are negligibly weak in three-dimensional disordered conventional conductors, are quantitatively tested in this lower carrier concentration and free-electron-like highly degenerate semiconductor.

  18. Linear temperature behavior of thermopower and strong electron-electron scattering in thick F-doped SnO2 films

    International Nuclear Information System (INIS)

    Lang, Wen-Jing; Li, Zhi-Qing

    2014-01-01

    Both the semi-classical and quantum transport properties of F-doped SnO 2 thick films (∼1 μm) were investigated experimentally. We found that the resistivity caused by the thermal phonons obeys Bloch-Grüneisen law from ∼90 to 300 K, while only the diffusive thermopower, which varies linearly with temperature from 300 down to 10 K, can be observed. The phonon-drag thermopower is completely suppressed due to the long electron-phonon relaxation time in the compound. These observations, together with the fact that the carrier concentration has negligible temperature dependence, indicate that the conduction electrons in F-doped SnO 2 films possess free-electron-like characteristics. At low temperatures, the electron-electron scattering dominates over the electron-phonon scattering and governs the inelastic scattering process. The theoretical predications of scattering rates of large- and small-energy-transfer electron-electron scattering processes, which are negligibly weak in three-dimensional disordered conventional conductors, are quantitatively tested in this lower carrier concentration and free-electron-like highly degenerate semiconductor.

  19. Chemical potential pinning due to equilibrium electron transfer at metal/C{sub 60}-doped polymer interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Heller, C.M.; Campbell, I.H.; Smith, D.L. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Barashkov, N.N.; Ferraris, J.P. [The University of Texas at Dallas, Richardson, Texas 75080 (United States)

    1997-04-01

    We report electroabsorption measurements of the built-in electrostatic potential in metal/C{sub 60}-doped polymer/metal structures to investigate chemical potential pinning due to equilibrium electron transfer from a metal contact to the electron acceptor energy level of C{sub 60} molecules in the polymer film. The built-in potentials of a series of structures employing thin films of both undoped and C{sub 60}-doped poly[2-methoxy, 5-(2{sup {prime}}-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) were measured. For undoped MEH-PPV, which has an energy gap of about 2.4 eV, the maximum built-in potential is about 2.1 eV, whereas for C{sub 60}-doped MEH-PPV the maximum built-in potential decreases to 1.5 eV. Electron transfer to the C{sub 60} molecules close to the metal interface pins the chemical potential of the metal contact near the electron acceptor energy level of C{sub 60} and decreases the built-in potential of the structure. From the systematic dependence of the built-in potential on the metal work function we find that the electron acceptor energy level of C{sub 60} in MEH-PPV is about 1.7 eV above the hole polaron energy level of MEH-PPV. {copyright} {ital 1997 American Institute of Physics.}

  20. Impurity effects in superconducting UPt3

    International Nuclear Information System (INIS)

    Aronson, M.C.; Vorenkamp, T.; Koziol, Z.; de Visser, A.; Bakker, K.; Franse, J.J.M.; Smith, J.L.

    1991-01-01

    Superconducting UPt 3 is characterized by a novel and complex magnetic field-temperature phase diagram, with two superconducting transitions at T c1 and T c2 in zero field. We have studied the effects of Pd and Y impurities on the zero field superconducting properties of UPt 3 . Resistance measurements show that both dopants increase the residual resistivity and decrease the spin fluctuation temperature in the normal state. T c1 is depressed by both dopants, but more effectively by Pd. |T c1 - T c2 | is essentially unaffected by Y doping, but increases dramatically with Pd doping