WorldWideScience

Sample records for electron gas heterostructures

  1. k-Space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures

    OpenAIRE

    Lev, L. L.; Maiboroda, I. O.; Husanu, M. -A.; Grichuk, E. S.; Chumakov, N. K.; Ezubchenko, I. S.; Chernykh, I. A.; Wang, X.; Tobler, B.; Schmitt, T.; Zanaveskin, M. L.; Valeyev, V. G.; Strocov, V. N.

    2018-01-01

    Nanostructures based on buried interfaces and heterostructures are at the heart of modern semiconductor electronics as well as future devices utilizing spintronics, multiferroics, topological effects and other novel operational principles. Knowledge of electronic structure of these systems resolved in electron momentum k delivers unprecedented insights into their physics. Here, we explore 2D electron gas formed in GaN/AlGaN high-electron-mobility transistor (HEMT) heterostructures with an ult...

  2. Two-dimensional electron gas in AlGaN/GaN heterostructures

    International Nuclear Information System (INIS)

    Li, J.Z.; Lin, J.Y.; Jiang, H.X.; Khan, M.A.; Chen, Q.

    1997-01-01

    The formation of a two-dimensional electron gas (2DEG) system by an AlGaN/GaN heterostructure has been further confirmed by measuring its electrical properties. The effect of persistent photoconductivity (PPC) has been observed and its unique features have been utilized to study the properties of 2DEG formed by the AlGaN/GaN heterointerface. Sharp electronic transitions from the first to the second subbands in the 2DEG channel have been observed by monitoring the 2DEG carrier mobility as a function of carrier concentration through the use of PPC. These results are expected to have significant implications on field-effect transistor and high electron mobility transistor applications based on the GaN system. copyright 1997 American Vacuum Society

  3. Two-Dimensional Electron Gas at SrTiO3-Based Oxide Heterostructures via Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Sang Woon Lee

    2016-01-01

    Full Text Available Two-dimensional electron gas (2DEG at an oxide interface has been attracting considerable attention for physics research and nanoelectronic applications. Early studies reported the formation of 2DEG at semiconductor interfaces (e.g., AlGaAs/GaAs heterostructures with interesting electrical properties such as high electron mobility. Besides 2DEG formation at semiconductor junctions, 2DEG was realized at the interface of an oxide heterostructure such as the LaAlO3/SrTiO3 (LAO/STO heterojunction. The origin of 2DEG was attributed to the well-known “polar catastrophe” mechanism in oxide heterostructures, which consist of an epitaxial LAO layer on a single crystalline STO substrate among proposed mechanisms. Recently, it was reported that the creation of 2DEG was achieved using the atomic layer deposition (ALD technique, which opens new functionality of ALD in emerging nanoelectronics. This review is focused on the origin of 2DEG at oxide heterostructures using the ALD process. In particular, it addresses the origin of 2DEG at oxide interfaces based on an alternative mechanism (i.e., oxygen vacancies.

  4. Electronic properties of semiconductor heterostructures

    International Nuclear Information System (INIS)

    Einevoll, G.T.

    1991-02-01

    Ten papers on the electronic properties of semiconductors and semiconductor heterostructures constitute the backbone of this thesis. Four papers address the form and validity of the single-band effective mass approximation for semiconductor heterostructures. In four other papers properties of acceptor states in bulk semiconductors and semiconductor heterostructures are studied using the novel effective bond-orbital model. The last two papers deal with localized excitions. 122 refs

  5. Prediction of two-dimensional electron gas mediated magnetoelectric coupling at ferroelectric PbTiO3/SrTiO3 heterostructures

    Science.gov (United States)

    Wei, Lan-ying; Lian, Chao; Meng, Sheng

    2017-05-01

    First-principles calculations predict the emergence of magnetoelectric coupling mediated by two-dimensional electron gas (2DEG) at the ferroelectric PbTiO3/SrTiO3 heterostructure. Free electrons endowed by naturally existing oxygen vacancies in SrTiO3 are driven to the heterostructure interface under the polarizing field of ferroelectric PbTiO3 to form a 2DEG. The electrons are captured by interfacial Ti atoms, which surprisingly exhibits ferromagnetism even at room temperature with a small critical density of ˜15.5 μ C /cm2 . The ferroelectricity-controlled ferromagnetism mediated by interfacial 2DEG shows strong magnetoelectric coupling strength, enabling convenient control of magnetism by electric field and vice versa. The PbTiO3/SrTiO3 heterostructure is cheap, easily grown, and controllable, promising future applications in low-cost spintronics and information storage at ambient condition.

  6. High mobility 2D electron gas in CdTe/CdMgTe heterostructures

    International Nuclear Information System (INIS)

    Karczewski, G.; Jaroszynski, J.; Kurowski, M.; Barcz, A.; Wojtowicz, T.; Kossut, J.

    1997-01-01

    We report on iodine doping of molecular beam epitaxy (MBE)-grown Cd(Mn)Te quasi-bulk films and modulation-doped CdTe/Cd 1-y Mg y Te two-dimensional (2D) single quantum well structures. Modulation doping with iodine of CdTe/Cd 1-y Mg y Te structures resulted in fabrication of a 2D electron gas with mobility exceeding 10 5 cm 2 /(Vs). This is the highest mobility reported in wide-gap II-VI materials

  7. Terahertz Radiation Heterodyne Detector Using Two-Dimensional Electron Gas in a GaN Heterostructure

    Science.gov (United States)

    Karasik, Boris S.; Gill, John J.; Mehdi, Imran; Crawford, Timothy J.; Sergeev, Andrei V.; Mitin, Vladimir V.

    2012-01-01

    High-resolution submillimeter/terahertz spectroscopy is important for studying atmospheric and interstellar molecular gaseous species. It typically uses heterodyne receivers where an unknown (weak) signal is mixed with a strong signal from the local oscillator (LO) operating at a slightly different frequency. The non-linear mixer devices for this frequency range are unique and are not off-the-shelf commercial products. Three types of THz mixers are commonly used: Schottky diode, superconducting hot-electron bolometer (HEB), and superconductor-insulation-superconductor (SIS) junction. A HEB mixer based on the two-dimensional electron gas (2DEG) formed at the interface of two slightly dissimilar semiconductors was developed. This mixer can operate at temperatures between 100 and 300 K, and thus can be used with just passive radiative cooling available even on small spacecraft.

  8. Geometric contribution leading to anomalous estimation of two-dimensional electron gas density in GaN based heterostructures

    Science.gov (United States)

    Upadhyay, Bhanu B.; Jha, Jaya; Takhar, Kuldeep; Ganguly, Swaroop; Saha, Dipankar

    2018-05-01

    We have observed that the estimation of two-dimensional electron gas density is dependent on the device geometry. The geometric contribution leads to the anomalous estimation of the GaN based heterostructure properties. The observed discrepancy is found to originate from the anomalous area dependent capacitance of GaN based Schottky diodes, which is an integral part of the high electron mobility transistors. The areal capacitance density is found to increase for smaller radii Schottky diodes, contrary to a constant as expected intuitively. The capacitance is found to follow a second order polynomial on the radius of all the bias voltages and frequencies considered here. In addition to the quadratic dependency corresponding to the areal component, the linear dependency indicates a peripheral component. It is further observed that the peripheral to areal contribution is inversely proportional to the radius confirming the periphery as the location of the additional capacitance. The peripheral component is found to be frequency dependent and tends to saturate to a lower value for measurements at a high frequency. In addition, the peripheral component is found to vanish when the surface is passivated by a combination of N2 and O2 plasma treatments. The cumulative surface state density per unit length of the perimeter of the Schottky diodes as obtained by the integrated response over the distance between the ohmic and Schottky contacts is found to be 2.75 × 1010 cm-1.

  9. Scattering times in the two-dimensional electron gas of AlxGa1-xN/AlN/GaN heterostructures

    International Nuclear Information System (INIS)

    Han Xiuxun; Honda, Yoshio; Narita, Tetsuo; Yamaguchi, Masahito; Sawaki, Nobuhiko; Tanaka, Tooru; Guo Qixin; Nishio, Mitsushiro

    2009-01-01

    Low-field Hall and Shubnikov-de Haas (SdH) measurements were performed on two-dimensional electron gas of Al 0.24 Ga 0.76 N/GaN and Al 0.24 Ga 0.76 N/AlN/GaN heterostructures at a low temperature. A dramatic improvement in electron mobility is observed in Al 0.24 Ga 0.76 N/AlN/GaN heterostructures with 1 and 2 nm thick AlN interlayers. A further increase in the AlN thickness degrades the transport behaviour. Transport and quantum scattering times were derived from the corresponding Hall mobility and the oscillatory part of the SdH signal. The ratio of the transport scattering time and the quantum scattering time increases from 3.87 in the heterostructure without the AlN interlayer to 14.34 with the 1 nm AlN interlayer and to 12.45 with the 2 nm AlN interlayer. A modified scattering calculation due to charged dislocation with a finite length suggests that dislocation related long-range scattering event tends to dominate both transport and quantum scattering times when a thin AlN interlayer is introduced.

  10. Strain effects on the spin polarized electron gas in ABO3/SrTiO3 (A = Pr, Nd and B = Al, Ga) heterostructures

    KAUST Repository

    Nazir, Safdar

    2013-04-11

    The spin polarized two dimensional electron gas in the correlated ABO3/SrTiO3 (A = Pr, Nd and B = Al, Ga) heterostructures is investigated by ab-initio calculations using density functional theory. Structural relaxation shows a strong buckling at and near the TiO2 terminated n-type interface (IFs) due to significant TiO6 octahedral distortions. We find in all cases, metallic states in a very narrow region of the SrTiO3, in agreement with experimental results. We demonstrate that the interface magnetism strongly reacts to the magnitude of the lattice strain. The orbital occupations and, hence, the charge carrier density change systematically as a function of the lattice mismatch between the component materials.

  11. Strain effects on the spin polarized electron gas in ABO3/SrTiO3 (A = Pr, Nd and B = Al, Ga) heterostructures

    KAUST Repository

    Nazir, Safdar; Schwingenschlö gl, Udo

    2013-01-01

    The spin polarized two dimensional electron gas in the correlated ABO3/SrTiO3 (A = Pr, Nd and B = Al, Ga) heterostructures is investigated by ab-initio calculations using density functional theory. Structural relaxation shows a strong buckling at and near the TiO2 terminated n-type interface (IFs) due to significant TiO6 octahedral distortions. We find in all cases, metallic states in a very narrow region of the SrTiO3, in agreement with experimental results. We demonstrate that the interface magnetism strongly reacts to the magnitude of the lattice strain. The orbital occupations and, hence, the charge carrier density change systematically as a function of the lattice mismatch between the component materials.

  12. Parallel charge sheets of electron liquid and gas in La0.5Sr0.5TiO3/SrTiO3 heterostructures

    Science.gov (United States)

    Renshaw Wang, X.; Sun, L.; Huang, Z.; Lü, W. M.; Motapothula, M.; Annadi, A.; Liu, Z. Q.; Zeng, S. W.; Venkatesan, T.; Ariando

    2015-12-01

    We show here a new phenomenon in La0.5Sr0.5TiO3/SrTiO3 (LSTO/STO) heterostructures; that is a coexistence of three-dimensional electron liquid (3DEL) and 2D electron gas (2DEG), separated by an intervening insulating LSTO layer. The two types of carriers were revealed through multi-channel analysis of the evolution of nonlinear Hall effect as a function of film thickness, temperature and back gate voltage. We demonstrate that the 3D electron originates from La doping in LSTO film and the 2D electron at the surface of STO is due to the polar field in the intervening insulating layer. As the film thickness is reduced below a critical thickness of 6 unit cells (uc), an abrupt metal-to-insulator transition (MIT) occurs without an intermediate semiconducting state. The properties of the LSTO layer grown on different substrates suggest that the insulating phase of the intervening layer is a result of interface strain induced by the lattice mismatch between the film and substrate. Further, by fitting the magnetoresistance (MR) curves, the 6 unit cell thick LSTO is shown to exhibit spin-orbital coupling. These observations point to new functionalities, in addition to magnetism and superconductivity in STO-based systems, which could be exploited in a multifunctional context.

  13. Room-temperature mobility above 2200 cm{sup 2}/V·s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Jr-Tai, E-mail: jrche@ifm.liu.se; Persson, Ingemar; Nilsson, Daniel; Hsu, Chih-Wei; Palisaitis, Justinas; Forsberg, Urban; Persson, Per O. Å.; Janzén, Erik [Department of Physics, Chemistry, and Biology, Linköping University, SE 581 83 Linköping (Sweden)

    2015-06-22

    A high mobility of 2250 cm{sup 2}/V·s of a two-dimensional electron gas (2DEG) in a metalorganic chemical vapor deposition-grown AlGaN/GaN heterostructure was demonstrated. The mobility enhancement was a result of better electron confinement due to a sharp AlGaN/GaN interface, as confirmed by scanning transmission electron microscopy analysis, not owing to the formation of a traditional thin AlN exclusion layer. Moreover, we found that the electron mobility in the sharp-interface heterostructures can sustain above 2000 cm{sup 2}/V·s for a wide range of 2DEG densities. Finally, it is promising that the sharp-interface AlGaN/GaN heterostructure would enable low contact resistance fabrication, less impurity-related scattering, and trapping than the AlGaN/AlN/GaN heterostructure, as the high-impurity-contained AlN is removed.

  14. Superconducting cuprate heterostructures for hot electron bolometers

    Science.gov (United States)

    Wen, B.; Yakobov, R.; Vitkalov, S. A.; Sergeev, A.

    2013-11-01

    Transport properties of the resistive state of quasi-two dimensional superconducting heterostructures containing ultrathin La2-xSrxCuO4 layers synthesized using molecular beam epitaxy are studied. The electron transport exhibits strong deviation from Ohm's law, δV ˜γI3, with a coefficient γ(T) that correlates with the temperature variation of the resistivity dρ /dT. Close to the normal state, analysis of the nonlinear behavior in terms of electron heating yields an electron-phonon thermal conductance per unit area ge -ph≈1 W/K cm2 at T = 20 K, one-two orders of magnitude smaller than in typical superconductors. This makes superconducting LaSrCuO heterostructures to be attractive candidate for the next generation of hot electron bolometers with greatly improved sensitivity.

  15. Superconducting cuprate heterostructures for hot electron bolometers

    International Nuclear Information System (INIS)

    Wen, B.; Yakobov, R.; Vitkalov, S. A.; Sergeev, A.

    2013-01-01

    Transport properties of the resistive state of quasi-two dimensional superconducting heterostructures containing ultrathin La 2−x Sr x CuO 4 layers synthesized using molecular beam epitaxy are studied. The electron transport exhibits strong deviation from Ohm's law, δV∼γI 3 , with a coefficient γ(T) that correlates with the temperature variation of the resistivity dρ/dT. Close to the normal state, analysis of the nonlinear behavior in terms of electron heating yields an electron-phonon thermal conductance per unit area g e−ph ≈1 W/K cm 2 at T = 20 K, one-two orders of magnitude smaller than in typical superconductors. This makes superconducting LaSrCuO heterostructures to be attractive candidate for the next generation of hot electron bolometers with greatly improved sensitivity

  16. Controlled Confinement of Half-metallic 2D Electron Gas in BaTiO3/Ba2FeReO6/BaTiO3 Heterostructures: A First-principles Study

    Science.gov (United States)

    Saha-Dasgupta, Tanusri; Baidya, Santu; Waghmare, Umesh; Paramekanti, Arun

    Using density functional theory calculations, we establish that the half-metallicity of bulk Ba2FeReO6 survives down i to 1 nm thickness in BaTiO3/Ba2FeReO6/BaTiO3 heterostructures grown along the (001) and (111) directions. The confinement of the two-dimensional (2D) electron gas in this quantum well structure arises from the suppressed hybridization between Re/Fe d states and unoccupied Ti d states, and it is further strengthened by polar fields for the (111) direction. This mechanism, distinct from the polar catastrophe, leads to an order of magnitude stronger confinement of the 2D electron gas than that at the LaAlO3/SrTiO3 interface. We further show low-energy bands of (111) heterostructure display nontrivial topological character. Our work opens up the possibility of realizing ultra-thin spintronic devices. Journal Ref: Phys. Rev. B 92, 161106(R) (2015) S.B. and T.S.D thank Department of Science and Technology, India for the support through Thematic Unit of Excellence. AP was supported by NSERC (Canada).

  17. Novel electron gas systems

    International Nuclear Information System (INIS)

    Senatore, G.; Rapisarda, F.; Conti, S.

    1998-01-01

    We review recent progress on the physics of electrons in the bilayered electron gas, relevant to coupled quantum wells in GaAs/AIGaAs heterostructures. First we focus on the phase diagram of a symmetric bilayer at T = B = 0, obtained by diffusion Monte Carlo (DMC) simulations. It is found that inter-layer correlations stabilize crystalline structures at intermediate inter-layer separation, while favoring a liquid phase at smaller distance. Also, the available DMC evidence is in contrast with the recently (Hartree-Fock) predicted total charge transfer (TCT), whereby all the electron spontaneously jump in one layer. In fact, one can show that such a TCT state is never stable in the ideal bilayer with no tunneling. We finally comment on ongoing DMC investigations on the electron-hole bilayer, where excitonic condensation is expected to take place. (Copyright (1998) World Scientific Publishing Co. Pte. Ltd)

  18. Variable electronic properties of lateral phosphorene-graphene heterostructures.

    Science.gov (United States)

    Tian, Xiaoqing; Liu, Lin; Du, Yu; Gu, Juan; Xu, Jian-Bin; Yakobson, Boris I

    2015-12-21

    Phosphorene and graphene have a tiny lattice mismatch along the armchair direction, which can result in an atomically sharp in-plane interface. The electronic properties of the lateral heterostructures of phosphorene/graphene are investigated by the first-principles method. Here, we demonstrate that the electronic properties of this type of heterostructure can be highly tunable by the quantum size effects and the externally applied electric field (Eext). At strong Eext, Dirac Fermions can be developed with Fermi velocities around one order smaller than that of graphene. Undoped and hydrogen doped configurations demonstrate three drastically different electronic phases, which reveal the strongly tunable potential of this type of heterostructure. Graphene is a naturally better electrode for phosphorene. The transport properties of two-probe devices of graphene/phosphorene/graphene exhibit tunnelling transport characteristics. Given these results, it is expected that in-plane heterostructures of phosphorene/graphene will present abundant opportunities for applications in optoelectronic and electronic devices.

  19. Highly Confined Electronic and Ionic Conduction in Oxide Heterostructures

    DEFF Research Database (Denmark)

    Pryds, Nini

    2015-01-01

    The conductance confined at the interface of complex oxide heterostructures provides new opportunities to explore nanoelectronic as well as nanoionic devices. In this talk I will present our recent results both on ionic and electronic conductivity at different heterostructures systems. In the first...... unattainable for Bi2O3-based materials, is achieved[1]. These confined heterostructures provide a playground not only for new high ionic conductivity phenomena that are sufficiently stable but also uncover a large variety of possible technological perspectives. At the second part, I will discuss and show our...

  20. Electron mobility of two-dimensional electron gas in InGaN heterostructures: Effects of alloy disorder and random dipole scatterings

    Science.gov (United States)

    Hoshino, Tomoki; Mori, Nobuya

    2018-04-01

    InGaN has a smaller electron effective mass and is expected to be used as a channel material for high-electron-mobility transistors. However, it is an alloy semiconductor with a random distribution of atoms, which introduces additional scattering mechanisms: alloy disorder and random dipole scatterings. In this work, we calculate the electron mobility in InGaN- and GaN-channel high-electron-mobility transistors (HEMTs) while taking into account acoustic deformation potential, polar optical phonon, alloy disorder, and random dipole scatterings. For InGaN-channel HEMTs, we find that not only alloy disorder but also random dipole scattering has a strong impact on the electron mobility and it significantly decreases as the In mole fraction of the channel increases. Our calculation also shows that the channel thickness w dependence of the mobility is rather weak when w > 1 nm for In0.1Ga0.9N-channel HEMTs.

  1. effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis

    Energy Technology Data Exchange (ETDEWEB)

    Tsatsulnikov, A. F., E-mail: andrew@beam.ioffe.ru [Russian Academy of Sciences, Submicron Heterostructures for Microelectronics Research and Engineering Center (Russian Federation); Lundin, V. W.; Zavarin, E. E.; Yagovkina, M. A.; Sakharov, A. V. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Usov, S. O. [Russian Academy of Sciences, Submicron Heterostructures for Microelectronics Research and Engineering Center (Russian Federation); Zemlyakov, V. E.; Egorkin, V. I. [National Research University of Electronic Technology (MIET) (Russian Federation); Bulashevich, K. A.; Karpov, S. Yu. [“Soft-Impact” Ltd. (Russian Federation); Ustinov, V. M. [Russian Academy of Sciences, Submicron Heterostructures for Microelectronics Research and Engineering Center (Russian Federation)

    2016-10-15

    The effect of the layer thickness and composition in AlGaN/AlN/GaN and InAlN/AlN/GaN transistor heterostructures with a two-dimensional electron gas on their electrical and the static parameters of test transistors fabricated from such heterostructures are experimentally and theoretically studied. It is shown that the use of an InAlN barrier layer instead of AlGaN results in a more than twofold increase in the carrier concentration in the channel, which leads to a corresponding increase in the saturation current. In situ dielectric-coating deposition on the InAlN/AlN/GaN heterostructure surface during growth process allows an increase in the maximum saturation current and breakdown voltages while retaining high transconductance.

  2. Vertical electron transport in van der Waals heterostructures with graphene layers

    International Nuclear Information System (INIS)

    Ryzhii, V.; Otsuji, T.; Ryzhii, M.; Aleshkin, V. Ya.; Dubinov, A. A.; Mitin, V.; Shur, M. S.

    2015-01-01

    We propose and analyze an analytical model for the self-consistent description of the vertical electron transport in van der Waals graphene-layer (GL) heterostructures with the GLs separated by the barriers layers. The top and bottom GLs serve as the structure emitter and collector. The vertical electron transport in such structures is associated with the propagation of the electrons thermionically emitted from GLs above the inter-GL barriers. The model under consideration describes the processes of the electron thermionic emission from and the electron capture to GLs. It accounts for the nonuniformity of the self-consistent electric field governed by the Poisson equation which accounts for the variation of the electron population in GLs. The model takes also under consideration the cooling of electrons in the emitter layer due to the Peltier effect. We find the spatial distributions of the electric field and potential with the high-electric-field domain near the emitter GL in the GL heterostructures with different numbers of GLs. Using the obtained spatial distributions of the electric field, we calculate the current-voltage characteristics. We demonstrate that the Peltier cooling of the two-dimensional electron gas in the emitter GL can strongly affect the current-voltage characteristics resulting in their saturation. The obtained results can be important for the optimization of the hot-electron bolometric terahertz detectors and different devices based on GL heterostructures

  3. Electron scattering times in ZnO based polar heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Falson, J., E-mail: j.falson@fkf.mpg.de [Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), The University of Tokyo, Tokyo 113-8656 (Japan); Department of Advanced Materials Science, The University of Tokyo, Kashiwa 277-8561 (Japan); Max Planck Institute for Solid State Research, D-70569 Stuttgart (Germany); Kozuka, Y. [Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), The University of Tokyo, Tokyo 113-8656 (Japan); Smet, J. H. [Max Planck Institute for Solid State Research, D-70569 Stuttgart (Germany); Arima, T. [Department of Advanced Materials Science, The University of Tokyo, Kashiwa 277-8561 (Japan); RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198 (Japan); Tsukazaki, A. [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); PRESTO, Japan Science and Technology Agency (JST), Tokyo 102-0075 (Japan); Kawasaki, M. [Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), The University of Tokyo, Tokyo 113-8656 (Japan); RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198 (Japan)

    2015-08-24

    The remarkable historic advances experienced in condensed matter physics have been enabled through the continued exploration and proliferation of increasingly richer and cleaner material systems. In this work, we report on the scattering times of charge carriers confined in state-of-the-art MgZnO/ZnO heterostructures displaying electron mobilities in excess of 10{sup 6} cm{sup 2}/V s. Through an examination of low field quantum oscillations, we obtain the effective mass of charge carriers, along with the transport and quantum scattering times. These times compare favorably with high mobility AlGaAs/GaAs heterostructures, suggesting the quality of MgZnO/ZnO heterostructures now rivals that of traditional semiconductors.

  4. Electronic and optical properties of diamond/organic semiconductor heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Gajewski, Wojciech; Garrido, Jose; Niedermeier, Martin; Stutzmann, Martin [Walter Schottky Institute, TU Muenchen, Am Coulombwall 3, 85748 Garching (Germany); Williams, Oliver; Haenen, Ken [Institute for Materials Research, University of Hasselt, Wetenschapspark 1, BE-3590 Diepenbeek (Belgium)

    2007-07-01

    Different diamond substrates (single crystalline: SCD, poly-crystalline: PCD and nano-crystalline: NCD) were used to investigate the electronic and optical properties of the diamond/organic semiconductor heterostructures. Layers of a poly[ethynyl-(2-decyloxy-5methoxy)benzene] - PEB, pentacene and 4-nitro-biphenyl-4-diazonium cations - Ph-Ph-NO{sub 2} were prepared by spin coating, thermal evaporation and grafting, respectively. The measurements of the electronic transport along the organic layer were performed using a Hg probe as well as Hall effect measurements in the temperature range 70-400 K. The I-V characteristics of the B-doped diamond/organic semiconductor heterostructures were measured at room temperature by means of the Hg probe. Undoped IIa and undoped PCD films were used for a study of the optical and optoelectronic properties of prepared heterostructures. The influence of the organic layer homogeneity and layer thickness on the optical properties will be discussed. Furthermore, preliminary data on perpendicular and parallel transport in the heterostructures layer will be reported.

  5. Spin-polarized electron gas in Co2MSi/SrTiO3(M= Ti, V, Cr, Mn, and Fe) heterostructures

    KAUST Repository

    Nazir, S.

    2016-06-08

    Spin-polarized density functional theory is used to study the TiO2 terminated interfaces between the magnetic Heusler alloys Co2Si (M = Ti, V, Cr, Mn, and Fe) and the non-polar band insulator SrTiO3. The structural relaxation at the interface turns out to depend systematically on the lattice mis- match. Charge transfer from the Heusler alloys (mainly the M 3d orbitals) to the Ti dxy orbitals of the TiO2 interface layer is found to gradually grow from M = Ti to Fe, resulting in an electron gas with increasing density of spin-polarized charge carriers. (© 2016 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim). © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

  6. Creating Two-Dimensional Electron Gas in Nonpolar/Nonpolar Oxide Interface via Polarization Discontinuity: First-Principles Analysis of CaZrO3/SrTiO3 Heterostructure.

    Science.gov (United States)

    Nazir, Safdar; Cheng, Jianli; Yang, Kesong

    2016-01-13

    We studied strain-induced polarization and resulting conductivity in the nonpolar/nonpolar CaZrO3/SrTiO3 (CZO/STO) heterostructure (HS) system by means of first-principles electronic structure calculations. By modeling four types of CZO/STO HS-based slab systems, i.e., TiO2/CaO and SrO/ZrO2 interface models with CaO and ZrO2 surface terminations in each model separately, we found that the lattice-mismatch-induced compressive strain leads to a strong polarization in the CZO film and that as the CZO film thickness increases there exists an insulator-to-metal transition. The polarization direction and critical thickness of the CZO film for forming interfacial metallic states depend on the surface termination of CZO film in both types of interface models. In the TiO2/CaO and SrO/ZrO2 interface models with CaO surface termination, the strong polarization drives the charge transfer from the CZO film to the first few TiO2 layers in the STO substrate, leading to the formation of two-dimensional electron gas (2DEG) at the interface. In the HS models with ZrO2 surface termination, two polarization domains with opposite directions are in the CZO film, which results in the charge transfer from the middle CZO layer to the interface and surface, respectively, leading to the coexistence of the 2DEG on the interface and the two-dimensional hole gas (2DHG) at the middle CZO layer. These findings open a new avenue to achieve 2DEG (2DHG) in perovskite-based HS systems via polarization discontinuity.

  7. Strain and water effects on the electronic structure and chemical activity of in-plane graphene/silicene heterostructure

    Science.gov (United States)

    Kistanov, Andrey A.; Cai, Yongqing; Zhang, Yong-Wei; Dmitriev, Sergey V.; Zhou, Kun

    2017-03-01

    By using first-principles calculations, the electronic structure of planar and strained in-plane graphene/silicene heterostructure is studied. The heterostructure is found to be metallic in a strain range from  -7% (compression) to  +7% (tension). The effect of compressive/tensile strain on the chemical activity of the in-plane graphene/silicene heterostructure is examined by studying its interaction with the H2O molecule. It shows that compressive/tensile strain is able to increase the binding energy of H2O compared with the adsorption on a planar surface, and the charge transfer between the water molecule and the graphene/silicene sheet can be modulated by strain. Moreover, the presence of the boron-nitride (BN)-substrate significantly influences the chemical activity of the graphene/silicene heterostructure upon its interaction with the H2O molecule and may cause an increase/decrease of the charge transfer between the H2O molecule and the heterostructure. These findings provide insights into the modulation of electronic properties of the in-plane free-standing/substrate-supported graphene/silicene heterostructure, and render possible ways to control its electronic structure, carrier density and redox characteristics, which may be useful for its potential applications in nanoelectronics and gas sensors.

  8. Strain and water effects on the electronic structure and chemical activity of in-plane graphene/silicene heterostructure

    International Nuclear Information System (INIS)

    Kistanov, Andrey A; Zhou, Kun; Cai, Yongqing; Zhang, Yong-Wei; Dmitriev, Sergey V

    2017-01-01

    By using first-principles calculations, the electronic structure of planar and strained in-plane graphene/silicene heterostructure is studied. The heterostructure is found to be metallic in a strain range from  −7% (compression) to  +7% (tension). The effect of compressive/tensile strain on the chemical activity of the in-plane graphene/silicene heterostructure is examined by studying its interaction with the H 2 O molecule. It shows that compressive/tensile strain is able to increase the binding energy of H 2 O compared with the adsorption on a planar surface, and the charge transfer between the water molecule and the graphene/silicene sheet can be modulated by strain. Moreover, the presence of the boron-nitride (BN)-substrate significantly influences the chemical activity of the graphene/silicene heterostructure upon its interaction with the H 2 O molecule and may cause an increase/decrease of the charge transfer between the H 2 O molecule and the heterostructure. These findings provide insights into the modulation of electronic properties of the in-plane free-standing/substrate-supported graphene/silicene heterostructure, and render possible ways to control its electronic structure, carrier density and redox characteristics, which may be useful for its potential applications in nanoelectronics and gas sensors. (paper)

  9. Novel electronic properties of a new MoS{sub 2}/TiO{sub 2} heterostructure and potential applications in solar cells and photocatalysis

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yanhua [State Key Laboratory of Coal Disaster Dynamics and Control, Department of Applied Physics, Chongqing University, Chongqing 400044 (China); Cai, Congzhong, E-mail: czcai@cqu.edu.cn [State Key Laboratory of Coal Disaster Dynamics and Control, Department of Applied Physics, Chongqing University, Chongqing 400044 (China); Gu, Yonghong [State Key Laboratory of Coal Disaster Dynamics and Control, Department of Applied Physics, Chongqing University, Chongqing 400044 (China); Chongqing Key Laboratory on Optoelectronic Functional Materials, Chongqing Normal University, Chongqing 401331 (China); Cheng, Wende [State Key Laboratory of Coal Disaster Dynamics and Control, Department of Applied Physics, Chongqing University, Chongqing 400044 (China); Department of Physics, Chongqing University of Science and Technology, Chongqing 401331 (China); Xiong, Wen [Department of Physics, Chongqing University, Chongqing 401331 (China); Zhao, Chengjun [State Key Laboratory of Coal Disaster Dynamics and Control, Department of Applied Physics, Chongqing University, Chongqing 400044 (China)

    2017-08-31

    Highlights: • The Moiré patterns of a new MoS{sub 2}/TiO{sub 2} heterostructure are investigated. • The novel electronic properties of the new heterostructure are discovered. • The MoS{sub 2}/TiO{sub 2} superlattice is found to have similar electronic properties to the bilayer heterostructure. • Two novel design schemes based on the MoS{sub 2}/TiO{sub 2} heterostructure and superlattice are proposed for a solar cell and photocatalyst, respectively. - Abstract: The structural and electronic properties of two-dimensional (2D) MoS{sub 2}/TiO{sub 2} heterostructure with a special configuration of Moiré pattern have been investigated for the first time using first-principles methods with van der Waals correction. It is found that the new van der Waals heterostructure is of a type-II band alignment between the MoS{sub 2} and TiO{sub 2} layers, and the electronic structures of monolayer MoS{sub 2} and 2D TiO{sub 2} are well retained in their respective layers due to a weak interlayer coupling, which suggests that the heterostructure may have potential applications in many fields such as photoelectric devices, photocatalysis, energy conversion and storage, etc. Meanwhile, the heterostructure can also provide an ideal platform of two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) for fundamental research such as spin Hall effect, etc. In addition, it is discovered that the corresponding MoS{sub 2}/TiO{sub 2} superlattice also has similar electronic properties to MoS{sub 2}/TiO{sub 2} bilayer heterostructure. Furthermore, two novel design schemes based on the MoS{sub 2}/TiO{sub 2} heterostructure and superlattice are proposed for a solar cell and photocatalyst, respectively.

  10. Nano Electronics on Atomically Controlled van der Waals Quantum Heterostructures

    Science.gov (United States)

    2018-02-19

    AFRL-AFOSR-JP-TR-2018-0012 Nano Electronics on Atomically Controlled van der Waals Quantum Heterostructures PHILIP Kim HARVARD COLLEGE PRESIDENT...21-02-2018 2.  REPORT TYPE      Final 3.  DATES COVERED (From - To)      15 Aug 2015 to 14 Feb 2017 4.  TITLE AND SUBTITLE Nano Electronics on...NOTES 14.  ABSTRACT We report molecular beam epitaxial growth and electronic transport properties of high quality topological insulator Bi2Se3 thin films

  11. Conduction electrons in acceptor-doped GaAs/GaAlAs heterostructures: a review

    International Nuclear Information System (INIS)

    Zawadzki, Wlodek; Raymond, Andre; Kubisa, Maciej

    2016-01-01

    We review magneto-optical and magneto-transport effects in GaAs/GaAlAs heterostructures doped in GaAlAs barriers with donors, providing two-dimensional (2D) electron gas (2DEG) in GaAs quantum wells (QWS), and additionally doped with smaller amounts of acceptors (mostly Be atoms) in the vicinity of 2DEG. One may also deal with residual acceptors (mostly C atoms). The behavior of such systems in the presence of a magnetic field differs appreciably from those doped in the vicinity of 2DEG with donors. Three subjects related to the acceptor-doped heterostructures are considered. First is the problem of bound states of conduction electrons confined to the vicinity of negatively charged acceptors by the joint effect of a QW and an external magnetic field parallel to the growth direction. A variational theory of such states is presented, demonstrating that an electron turning around a repulsive center has discrete energies above the corresponding Landau levels. Experimental evidence for the discrete electron energies comes from the work on interband photo-magneto-luminescence, intraband cyclotron resonance and quantum magneto-transport (the Quantum Hall and Shubnikov–de Haas effects). An electron rain-down effect at weak electric fields and a boil-off effect at strong electric fields are introduced. It is demonstrated, both theoretically and experimentally, that a negatively charged acceptor can localize more than one electron. The second subject describes experiment and theory of asymmetric quantized Hall and Shubnikov–de Haas plateaus in acceptor-doped GaAs/GaAlAs heterostructures. It is shown that the main features of the plateau asymmetry can be attributed to asymmetric density of Landau states in the presence of acceptors. However, at high magnetic fields, the rain-down effect is also at work. The third subject deals with the so-called disorder modes (DMs) in the cyclotron resonance of conduction electrons. The DMs originate from random distributions of

  12. Imaging the motion of electrons in 2D semiconductor heterostructures

    Science.gov (United States)

    Dani, Keshav

    Technological progress since the late 20th century has centered on semiconductor devices, such as transistors, diodes, and solar cells. At the heart of these devices, is the internal motion of electrons through semiconductor materials due to applied electric fields or by the excitation of photocarriers. Imaging the motion of these electrons would provide unprecedented insight into this important phenomenon, but requires high spatial and temporal resolution. Current studies of electron dynamics in semiconductors are generally limited by the spatial resolution of optical probes, or by the temporal resolution of electronic probes. In this talk, we combine femtosecond pump-probe techniques with spectroscopic photoemission electron microscopy to image the motion of photoexcited electrons from high-energy to low-energy states in a 2D InSe/GaAs heterostructure exhibiting a type-II band alignment. At the instant of photoexcitation, energy-resolved photoelectron images reveal a highly non-equilibrium distribution of photocarriers in space and energy. Thereafter, in response to the out-of-equilibrium photocarriers, we observe the spatial redistribution of charges, thus forming internal electric fields, bending the semiconductor bands, and finally impeding further charge transfer. By assembling images taken at different time-delays, we make a movie lasting a few tens of picoseconds of the electron transfer process in the photoexcited type-II heterostructure - a fundamental phenomenon in semiconductor devices like solar cells. Quantitative analysis and theoretical modeling of spatial variations in the video provide insight into future solar cells, electron dynamics in 2D materials, and other semiconductor devices.

  13. Electronic properties of phosphorene/graphene heterostructures: Effect of external electric field

    Energy Technology Data Exchange (ETDEWEB)

    Kaur, Sumandeep; Srivastava, Sunita; Tankeshwar, K. [Department of Physics, Panjab University, Chandigarh-160014 (India); Kumar, Ashok [Centre for Physical Sciences, School of Basic and Applied Sciences, Central University of Punjab, Bathinda, India 151001 (India)

    2016-05-23

    We report the electronic properties of electrically gated heterostructures of black and blue phosphorene with graphene. The heterostructure of blue phosphorene with graphene is energetically more favorable than black phospherene/graphene. However, both are bonded by weak interlayer interactions. Graphene induces the Dirac cone character in both heterostructure which shows tunabilities with external electric field. It is found that Dirac cone get shifted depending on the polarity of external electric field that results into the so called self induced p-type or n-type doping effect. These features have importance in the fabrication of nano-electronic devices based on the phosphorene/graphene heterostructures.

  14. Potassium selective chemically modified field effect transistors based on AlGaN/GaN two-dimensional electron gas heterostructures.

    Science.gov (United States)

    Alifragis, Y; Volosirakis, A; Chaniotakis, N A; Konstantinidis, G; Adikimenakis, A; Georgakilas, A

    2007-06-15

    We investigate the use of the AlGaN/GaN high electron mobility transistor (HEMT) as a novel transducer for the development of ion-selective chemically modified HEMT sensors (ChemHEMTs). For this, polyvinyl chloride (PVC) membrane doped with ion-selective ionophores is deposited onto the area of the gate for the chemical recognition step, while the AlGaN/GaN HEMT is used as the transducer. In particular, the use of a valinocycin doped membrane with thickness of 50 microm generates a sensor with excellent analytical characteristics for the monitoring of K(+). The K(+)-ChemHEMT has sensitivity of 52.4 mV/pK(+)in the linear range of 10(-5) to 10(-2)M, while the detection limit is in the order of 3.1 x 10(-6)M. Also, the sensor shows selectivity similar to valinomycin-based ISEs, while the signal stability over time and the measurement to measurement reproducibility are very good.

  15. Analysis of quantum semiconductor heterostructures by ballistic electron emission spectroscopy

    Science.gov (United States)

    Guthrie, Daniel K.

    1998-09-01

    The microelectronics industry is diligently working to achieve the goal of gigascale integration (GSI) by early in the 21st century. For the past twenty-five years, progress toward this goal has been made by continually scaling down device technology. Unfortunately, this trend cannot continue to the point of producing arbitrarily small device sizes. One possible solution to this problem that is currently under intensive study is the relatively new area of quantum devices. Quantum devices represent a new class of microelectronic devices that operate by utilizing the wave-like nature (reflection, refraction, and confinement) of electrons together with the laws of quantum mechanics to construct useful devices. One difficulty associated with these structures is the absence of measurement techniques that can fully characterize carrier transport in such devices. This thesis addresses this need by focusing on the study of carrier transport in quantum semiconductor heterostructures using a relatively new and versatile measurement technique known as ballistic electron emission spectroscopy (BEES). To achieve this goal, a systematic approach that encompasses a set of progressively more complex structures is utilized. First, the simplest BEES structure possible, the metal/semiconductor interface, is thoroughly investigated in order to provide a foundation for measurements on more the complex structures. By modifying the semiclassical model commonly used to describe the experimental BEES spectrum, a very complete and accurate description of the basic structure has been achieved. Next, a very simple semiconductor heterostructure, a Ga1-xAlxAs single-barrier structure, was measured and analyzed. Low-temperature measurements on this structure were used to investigate the band structure and electron-wave interference effects in the Ga1-xAlxAs single barrier structure. These measurements are extended to a simple quantum device by designing, measuring, and analyzing a set of

  16. Centimetre-scale electron diffusion in photoactive organic heterostructures

    Science.gov (United States)

    Burlingame, Quinn; Coburn, Caleb; Che, Xiaozhou; Panda, Anurag; Qu, Yue; Forrest, Stephen R.

    2018-02-01

    The unique properties of organic semiconductors, such as flexibility and lightness, are increasingly important for information displays, lighting and energy generation. But organics suffer from both static and dynamic disorder, and this can lead to variable-range carrier hopping, which results in notoriously poor electrical properties, with low electron and hole mobilities and correspondingly short charge-diffusion lengths of less than a micrometre. Here we demonstrate a photoactive (light-responsive) organic heterostructure comprising a thin fullerene channel sandwiched between an electron-blocking layer and a blended donor:C70 fullerene heterojunction that generates charges by dissociating excitons. Centimetre-scale diffusion of electrons is observed in the fullerene channel, and this can be fitted with a simple electron diffusion model. Our experiments enable the direct measurement of charge diffusivity in organic semiconductors, which is as high as 0.83 ± 0.07 square centimetres per second in a C60 channel at room temperature. The high diffusivity of the fullerene combined with the extraordinarily long charge-recombination time yields diffusion lengths of more than 3.5 centimetres, orders of magnitude larger than expected for an organic system.

  17. Coherent electron focusing with quantum point contacts in a two-dimensional electron gas

    NARCIS (Netherlands)

    Houten, H. van; Beenakker, C.W.J.; Williamson, J.G.; Broekaart, M.E.I.; Loosdrecht, P.H.M. van; Wees, B.J. van; Mooij, J.E.; Foxon, C.T.; Harris, J.J.

    1989-01-01

    Transverse electron focusing in a two-dimensional electron gas is investigated experimentally and theoretically for the first time. A split Schottky gate on top of a GaAs-AlxGa1–xAs heterostructure defines two point contacts of variable width, which are used as injector and collector of ballistic

  18. High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers

    International Nuclear Information System (INIS)

    Li Guowang; Cao Yu; Xing Huili Grace; Jena, Debdeep

    2010-01-01

    We report high-electron mobility nitride heterostructures with >70% Al composition AlGaN alloy barriers grown by molecular beam epitaxy. Direct growth of such AlGaN layers on GaN resulted in hexagonal trenches and a low mobility polarization-induced charge. By applying growth interruption at the heterojunction, the surface morphology improved dramatically and the room temperature two-dimensional electron gas (2DEG) mobility increased by an order of magnitude, exceeding 1300 cm 2 /V s. The 2DEG density was tunable at 0.4-3.7x10 13 /cm 2 by varying the total barrier thickness (t). Surface barrier heights of the heterostructures were extracted and exhibited dependence on t.

  19. Interlayer electron-hole pair multiplication by hot carriers in atomic layer semiconductor heterostructures

    Science.gov (United States)

    Barati, Fatemeh; Grossnickle, Max; Su, Shanshan; Lake, Roger; Aji, Vivek; Gabor, Nathaniel

    Two-dimensional heterostructures composed of atomically thin transition metal dichalcogenides provide the opportunity to design novel devices for the study of electron-hole pair multiplication. We report on highly efficient multiplication of interlayer electron-hole pairs at the interface of a tungsten diselenide / molybdenum diselenide heterostructure. Electronic transport measurements of the interlayer current-voltage characteristics indicate that layer-indirect electron-hole pairs are generated by hot electron impact excitation. Our findings, which demonstrate an efficient energy relaxation pathway that competes with electron thermalization losses, make 2D semiconductor heterostructures viable for a new class of hot-carrier energy harvesting devices that exploit layer-indirect electron-hole excitations. SHINES, an Energy Frontier Research Center funded by the U.S. Department of Energy, Air Force Office of Scientific Research.

  20. Decoupled electron and phonon transports in hexagonal boron nitride-silicene bilayer heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Cai, Yongqing; Pei, Qing-Xiang, E-mail: peiqx@ihpc.a-star.edu.sg, E-mail: zhangg@ihpc.a-star.edu.sg; Zhang, Gang, E-mail: peiqx@ihpc.a-star.edu.sg, E-mail: zhangg@ihpc.a-star.edu.sg; Zhang, Yong-Wei [Institute of High Performance Computing, A*STAR, Singapore 138632 (Singapore)

    2016-02-14

    Calculations based on the density functional theory and empirical molecular dynamics are performed to investigate interlayer interaction, electronic structure and thermal transport of a bilayer heterostructure consisting of silicene and hexagonal boron nitride (h-BN). In this heterostructure, the two layers are found to interact weakly via a non-covalent binding. As a result, the Dirac cone of silicene is preserved with the Dirac cone point being located exactly at the Fermi level, and only a small amount of electrons are transferred from h-BN to silicene, suggesting that silicene dominates the electronic transport. Molecular dynamics calculation results demonstrate that the heat current along h-BN is six times of that along silicene, suggesting that h-BN dominates the thermal transport. This decoupled role of h-BN and silicene in thermal and electronic transport suggests that the BN-silicene bilayer heterostructure is promising for thermoelectric applications.

  1. Novel engineered compound semiconductor heterostructures for advanced electronics applications

    Science.gov (United States)

    Stillman, Gregory E.; Holonyak, Nick, Jr.; Coleman, James J.

    1992-06-01

    To provide the technology base that will enable SDIO capitalization on the performance advantages offered through novel engineered multiple-lavered compound semiconductor structures, this project has focussed on three specific areas: (1) carbon doping of AlGaAs/GaAs and InP/InGaAs materials for reliable high frequency heterojunction bipolar transistors; (2) impurity induced layer disordering and the environmental degradation of AlxGal-xAs-GaAs quantum-well heterostructures and the native oxide stabilization of AlxGal-xAs-GaAs quantum well heterostructure lasers; and (3) non-planar and strained-layer quantum well heterostructure lasers and laser arrays. The accomplishments in this three year research are reported in fifty-six publications and the abstracts included in this report.

  2. Mixed Dimensional Van der Waals Heterostructures for Opto-Electronics.

    Science.gov (United States)

    Jariwala, Deep

    The isolation of a growing number of two-dimensional (2D) materials has inspired worldwide efforts to integrate distinct 2D materials into van der Waals (vdW) heterostructures. While a tremendous amount of research activity has occurred in assembling disparate 2D materials into ``all-2D'' van der Waals heterostructures, this concept is not limited to 2D materials alone. Given that any passivated, dangling bond-free surface will interact with another via vdW forces, the vdW heterostructure concept can be extended to include the integration of 2D materials with non-2D materials that adhere primarily through noncovalent interactions. In the first part of this talk I will present our work on emerging mixed-dimensional (2D + nD, where n is 0, 1 or 3) heterostructure devices performed at Northwestern University. I will present two distinct examples of gate-tunable p-n heterojunctions 1. Single layer n-type MoS2\\ (2D) combined with p-type semiconducting single walled carbon nanotubes (1D) and 2. Single layer MoS2 combined with 0D molecular semiconductor, pentacene. I will present the unique electrical properties, underlying charge transport mechanisms and photocurrent responses in both the above systems using a variety of scanning probe microscopy techniques as well as computational analysis. This work shows that van der Waals interactions are robust across different dimensionalities of materials and can allow fabrication of semiconductor devices with unique geometries and properties unforeseen in bulk semiconductors. Finally, I will briefly discuss our recent work from Caltech on near-unity absorption in atomically-thin photovoltaic devices. This work is supported by the Materials Research Center at Northwestern University, funded by the National Science Foundation (NSF DMR-1121262) and the Resnick Sustainability Institute at Caltech.

  3. Electronic properties of electron and hole in type-II semiconductor nano-heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Rahul, K. Suseel [Department of Physics, Central University of Kerala, Riverside Transit Campus, Kasaragod, Kerala. India (India); Department of Physics, Sri Vyasa NSS College, Wadakkancheri, Thrissur, Kerala, PIN:680623. India (India); Souparnika, C. [Department of Physics, Sri Vyasa NSS College, Wadakkancheri, Thrissur, Kerala, PIN:680623. India (India); Salini, K.; Mathew, Vincent, E-mail: vincent@cukerala.ac.in [Department of Physics, Central University of Kerala, Riverside Transit Campus, Kasaragod, Kerala. India (India)

    2016-05-06

    In this project, we record the orbitals of electron and hole in type-II (CdTe/CdSe/CdTe/CdSe) semiconductor nanocrystal using effective mass approximation. In type-II the band edges of both valance and conduction band are higher than that of shell. So the electron and hole get confined in different layers of the hetero-structure. The energy eigen values and eigen functions are calculated by solving Schrodinger equation using finite difference matrix method. Based on this we investigate the effect of shell thickness and well width on energy and probability distribution of ground state (1s) and few excited states (1p,1d,etc). Our results predict that, type-II quantum dots have significant importance in photovoltaic applications.

  4. Electronic properties of electron and hole in type-II semiconductor nano-heterostructures

    Science.gov (United States)

    Rahul, K. Suseel; Souparnika, C.; Salini, K.; Mathew, Vincent

    2016-05-01

    In this project, we record the orbitals of electron and hole in type-II (CdTe/CdSe/CdTe/CdSe) semiconductor nanocrystal using effective mass approximation. In type-II the band edges of both valance and conduction band are higher than that of shell. So the electron and hole get confined in different layers of the hetero-structure. The energy eigen values and eigen functions are calculated by solving Schrodinger equation using finite difference matrix method. Based on this we investigate the effect of shell thickness and well width on energy and probability distribution of ground state (1s) and few excited states (1p,1d,etc). Our results predict that, type-II quantum dots have significant importance in photovoltaic applications.

  5. Electronic properties of blue phosphorene/graphene and blue phosphorene/graphene-like gallium nitride heterostructures.

    Science.gov (United States)

    Sun, Minglei; Chou, Jyh-Pin; Yu, Jin; Tang, Wencheng

    2017-07-05

    Blue phosphorene (BlueP) is a graphene-like phosphorus nanosheet which was synthesized very recently for the first time [Nano Lett., 2016, 16, 4903-4908]. The combination of electronic properties of two different two-dimensional materials in an ultrathin van der Waals (vdW) vertical heterostructure has been proved to be an effective approach to the design of novel electronic and optoelectronic devices. Therefore, we used density functional theory to investigate the structural and electronic properties of two BlueP-based heterostructures - BlueP/graphene (BlueP/G) and BlueP/graphene-like gallium nitride (BlueP/g-GaN). Our results showed that the semiconducting nature of BlueP and the Dirac cone of G are well preserved in the BlueP/G vdW heterostructure. Moreover, by applying a perpendicular electric field, it is possible to tune the position of the Dirac cone of G with respect to the band edge of BlueP, resulting in the ability to control the Schottky barrier height. For the BlueP/g-GaN vdW heterostructure, BlueP forms an interface with g-GaN with a type-II band alignment, which is a promising feature for unipolar electronic device applications. Furthermore, we discovered that both G and g-GaN can be used as an active layer for BlueP to facilitate charge injection and enhance the device performance.

  6. Electronic structure robustness and design rules for 2D colloidal heterostructures

    Science.gov (United States)

    Chu, Audrey; Livache, Clément; Ithurria, Sandrine; Lhuillier, Emmanuel

    2018-01-01

    Among the colloidal quantum dots, 2D nanoplatelets present exceptionally narrow optical features. Rationalizing the design of heterostructures of these objects is of utmost interest; however, very little work has been focused on the investigation of their electronic properties. This work is organized into two main parts. In the first part, we use 1D solving of the Schrödinger equation to extract the effective masses for nanoplatelets (NPLs) of CdSe, CdS, and CdTe and the valence band offset for NPL core/shell of CdSe/CdS. In the second part, using the determined parameters, we quantize how the spectra of the CdSe/CdS heterostructure get affected by (i) the application of an electric field and (ii) by the presence of a dull interface. We also propose design strategies to make the heterostructure even more robust.

  7. Stability and electronic structure studies of LaAlO3/SrTiO3 (110) heterostructures

    International Nuclear Information System (INIS)

    Du Yan-Ling; Wang Chun-Lei; Li Ji-Chao; Xu Pan-Pan; Zhang Xin-Hua; Liu Jian; Su Wen-Bin; Mei Liang-Mo

    2014-01-01

    The first-principles calculations are employed to investigate the stability, magnetic, and electrical properties of the oxide heterostructure of LaAlO 3 /SrTiO 3 (110). By comparing their interface energies, it is obtained that the buckled interface is more stable than the abrupt interface. This result is consistent with experimental observation. At the interface of LaAlO 3 /SrTiO 3 (110) heterostructure, the Ti—O octahedron distortions cause the Ti t 2g orbitals to split into the two-fold degenerate d xz /d yz and nondegenerate d xy orbitals. The former has higher energy than the latter. The partly filled two-fold degenerate t 2g orbitals are the origin of two-dimensional electron gas, which is confined at the interface. Lattice mismatch between LaAlO 3 and SrTiO 3 leads to ferroelectric-like lattice distortions at the interface, and this is the origin of spin-splitting of Ti 3d electrons. Hence the magnetism appears at the interface of LaAlO 3 /SrTiO 3 (110). (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  8. Two-dimensional electron gases in MgZnO/ZnO and ZnO/MgZnO/ZnO heterostructures grown by dual ion beam sputtering

    Science.gov (United States)

    Singh, Rohit; Arif Khan, Md; Sharma, Pankaj; Than Htay, Myo; Kranti, Abhinav; Mukherjee, Shaibal

    2018-04-01

    This work reports on the formation of high-density (~1013-1014 cm-2) two-dimensional electron gas (2DEG) in ZnO-based heterostructures, grown by a dual ion beam sputtering system. We probe 2DEG in bilayer MgZnO/ZnO and capped ZnO/MgZnO/ZnO heterostructures utilizing MgZnO barrier layers with varying thickness and Mg content. The effect of the ZnO cap layer thickness on the ZnO/MgZnO/ZnO heterostructure is also studied. Hall measurements demonstrate that the addition of a 5 nm ZnO cap layer results in an enhancement of the 2DEG density by about 1.5 times compared to 1.11 × 1014 cm-2 for the uncapped bilayer heterostructure with the same 30 nm barrier thickness and 30 at.% Mg composition in the barrier layer. From the low-temperature Hall measurement, the sheet carrier concentration and mobility are both found to be independent of the temperature. The capacitance-voltage measurement suggests a carrier density of ~1020 cm-3, confined in 2DEG at the MgZnO/ZnO heterointerface. The results presented are significant for the optimization of 2DEG for the eventual realization of cost-effective and large-area MgZnO/ZnO-based high-electron-mobility transistors.

  9. Quasi-two-dimensional electron gas at the interface of γ-Al{sub 2}O{sub 3}/SrTiO{sub 3} heterostructures grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ngo, Thong Q.; McDaniel, Martin D.; Ekerdt, John G., E-mail: ekerdt@che.utexas.edu [Department of Chemical Engineering, University of Texas at Austin, Austin, Texas 78712 (United States); Goble, Nicholas J.; Gao, Xuan P. A. [Department of Physics, Case Western Reserve University, Cleveland, Ohio 44106 (United States); Posadas, Agham; Kormondy, Kristy J.; Demkov, Alexander A. [Department of Physics, University of Texas at Austin, Austin, Texas 78712 (United States); Lu, Sirong [School of Engineering for Matter, Transport and Engineering, Arizona State University, Tempe, Arizona 85287 (United States); Jordan-Sweet, Jean [IBM T.J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Smith, David J. [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)

    2015-09-21

    We report the formation of a quasi-two-dimensional electron gas (2-DEG) at the interface of γ-Al{sub 2}O{sub 3}/TiO{sub 2}-terminated SrTiO{sub 3} (STO) grown by atomic layer deposition (ALD). The ALD growth of Al{sub 2}O{sub 3} on STO(001) single crystal substrates was performed at temperatures in the range of 200–345 °C. Trimethylaluminum and water were used as co-reactants. In situ reflection high energy electron diffraction, ex situ x-ray diffraction, and ex situ cross-sectional transmission electron microscopy were used to determine the crystallinity of the Al{sub 2}O{sub 3} films. As-deposited Al{sub 2}O{sub 3} films grown above 300 °C were crystalline with the γ-Al{sub 2}O{sub 3} phase. In situ x-ray photoelectron spectroscopy was used to characterize the Al{sub 2}O{sub 3}/STO interface, indicating that a Ti{sup 3+} feature in the Ti 2p spectrum of STO was formed after 2–3 ALD cycles of Al{sub 2}O{sub 3} at 345 °C and even after the exposure to trimethylaluminum alone at 300 and 345 °C. The interface quasi-2-DEG is metallic and exhibits mobility values of ∼4 and 3000 cm{sup 2} V{sup −1} s{sup −1} at room temperature and 15 K, respectively. The interfacial conductivity depended on the thickness of the Al{sub 2}O{sub 3} layer. The Ti{sup 3+} signal originated from the near-interfacial region and vanished after annealing in an oxygen environment.

  10. Electronic band structure of Two-Dimensional WS2/Graphene van der Waals Heterostructures

    Science.gov (United States)

    Henck, Hugo; Ben Aziza, Zeineb; Pierucci, Debora; Laourine, Feriel; Reale, Francesco; Palczynski, Pawel; Chaste, Julien; Silly, Mathieu G.; Bertran, François; Le Fèvre, Patrick; Lhuillier, Emmanuel; Wakamura, Taro; Mattevi, Cecilia; Rault, Julien E.; Calandra, Matteo; Ouerghi, Abdelkarim

    2018-04-01

    Combining single-layer two-dimensional semiconducting transition-metal dichalcogenides (TMDs) with a graphene layer in van der Waals heterostructures offers an intriguing means of controlling the electronic properties through these heterostructures. Here, we report the electronic and structural properties of transferred single-layer W S2 on epitaxial graphene using micro-Raman spectroscopy, angle-resolved photoemission spectroscopy measurements, and density functional theory (DFT) calculations. The results show good electronic properties as well as a well-defined band arising from the strong splitting of the single-layer W S2 valence band at the K points, with a maximum splitting of 0.44 eV. By comparing our DFT results with local and hybrid functionals, we find the top valence band of the experimental heterostructure is close to the calculations for suspended single-layer W S2 . Our results provide an important reference for future studies of electronic properties of W S2 and its applications in valleytronic devices.

  11. Optical phonon scattering on electronic mobility in Al2O3/AlGaN/AlN/GaN heterostructures

    Science.gov (United States)

    Zhou, X. J.; Qu, Y.; Ban, S. L.; Wang, Z. P.

    2017-12-01

    Considering the built-in electric fields and the two-mode property of transverse optical phonons in AlGaN material, the electronic eigen-energies and wave functions are obtained by solving Schrödinger equation with the finite difference method. The dispersion relations and potentials of the optical phonons are given by the transfer matrix method. The mobility of the two dimensional electron gas influenced by the optical phonons in Al2O3/AlGaN/AlN/GaN heterostructures is investigated based on the theory of Lei-Ting force balance equation. It is found that the scattering from the half-space phonons is the main factor affecting the electronic mobility, and the influence of the other phonons can be ignored. The results show that the mobility decreases with increasing the thicknesses of Al2O3 and AlN layers, but there is no definite relationship between the mobility and the thickness of AlGaN barrier. The mobility is obviously reduced by increasing Al component in AlGaN crystal to show that the effect of ternary mixed crystals is important. It is also found that the mobility increases first and then decreases as the increment of the fixed charges, but decreases always with increasing temperature. The heterostructures constructed here can be good candidates as metal-oxide-semiconductor high-electron-mobility-transistors since they have higher electronic mobility due to the influence from interface phonons weakened by the AlN interlayer.

  12. Scatterings and Quantum Effects in (Al ,In )N /GaN Heterostructures for High-Power and High-Frequency Electronics

    Science.gov (United States)

    Wang, Leizhi; Yin, Ming; Khan, Asif; Muhtadi, Sakib; Asif, Fatima; Choi, Eun Sang; Datta, Timir

    2018-02-01

    Charge transport in the wide-band-gap (Al ,In )N /GaN heterostructures with high carrier density approximately 2 ×1013 cm-2 is investigated over a large range of temperature (270 mK ≤T ≤280 K ) and magnetic field (0 ≤B ≤18 T ). We observe the first evidence of weak localization in the two-dimensional electron gas in this system. From the Shubnikov-de Haas (SdH) oscillations a relatively light effective mass of 0.23 me is determined. Furthermore, the linear dependence with temperature (T power and high-frequency electronics.

  13. Electron microscopy study of advanced heterostructures for optoelectronics

    NARCIS (Netherlands)

    Katcki, J.; Ratajczak, J.; Phillipp, F.; Muszalski, J.; Bugajski, M.; Chen, J.X.; Fiore, A.

    2003-01-01

    The application of cross-sectional transmission electron microscopy and SEM to the investigation of optoelectronic devices are reviewed. Special attention was paid to the electron microscopy assessment of the growth perfection of such crucial elements of the devices like quantum wells, quantum dots,

  14. Theoretical prediction of high electron mobility in multilayer MoS2 heterostructured with MoSe2

    Science.gov (United States)

    Ji, Liping; Shi, Juan; Zhang, Z. Y.; Wang, Jun; Zhang, Jiachi; Tao, Chunlan; Cao, Haining

    2018-01-01

    Two-dimensional (2D) MoS2 has been considered to be one of the most promising semiconducting materials with the potential to be used in novel nanoelectronic devices. High carrier mobility in the semiconductor is necessary to guarantee a low power dissipation and a high switch speed of the corresponding electronic device. Strain engineering in 2D materials acts as an important approach to tailor and design their electronic and carrier transport properties. In this work, strain is introduced to MoS2 through perpendicularly building van der Waals heterostructures MoSe2-MoS2. Our first-principles calculations demonstrate that acoustic-phonon-limited electron mobility can be significantly enhanced in the heterostructures compared with that in pure multilayer MoS2. It is found that the effective electron mass and the deformation potential constant are relatively smaller in the heterostructures, which is responsible for the enhancement in the electron mobility. Overall, the electron mobility in the heterostructures is about 1.5 times or more of that in pure multilayer MoS2 with the same number of layers for the studied structures. These results indicate that MoSe2 is an excellent material to be heterostructured with multilayer MoS2 to improve the charge transport property.

  15. Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures

    International Nuclear Information System (INIS)

    Egorov, A. Yu.; Gladyshev, A. G.; Nikitina, E. V.; Denisov, D. V.; Polyakov, N. K.; Pirogov, E. V.; Gorbazevich, A. A.

    2010-01-01

    Double pulse doped (δ-doped) InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) heterostructures were grown by molecular-beam epitaxy using a multiwafer technological system. The room-temperature electron mobility was determined by the Hall method as 6550 and 6000 cm 2 /(V s) at sheet electron densities of 3.00 x 10 12 and 3.36 x 10 12 cm -2 , respectively. HEMT heterostructures fabricated in a single process feature high uniformity of structural and electrical characteristics over the entire area of wafers 76.2 mm in diameter and high reproducibility of characteristics from process to process.

  16. Electric field modulation of electronic structures in InSe and black phosphorus heterostructure

    Science.gov (United States)

    Ding, Yi-min; Shi, Jun-jie; Zhang, Min; Xia, Congxin; Wu, Meng; Wang, Hui; Cen, Yu-lang; Pan, Shu-hang

    2018-01-01

    The electronic structures of InSe and black phosphorus (BP) heterostructure modulated by an external electric field (E⊥) have been investigated based on first-principles calculations. We find that InSe/BP has type II band offset with a direct band gap of 0.39 eV, and the electrons (holes) are spatially located in InSe (BP) layer. Meanwhile, the band structures of InSe/BP can be effectively modulated by E⊥. The band gap shows linear variation with E⊥ and its maximum of 0.69 eV is observed when E⊥ is 0.4 V / Å. The InSe/BP experiences a transition from semiconductor to metal with E⊥ of -0.6 and 0.8 V / Å. The band offsets are also modulated by E⊥, resulting in different spatial distribution of electron-hole pairs. Most importantly, the high carrier mobility can be preserved well under E⊥. Our results show that the novel InSe/BP heterostructure has great potential application in electronic and optoelectronic devices.

  17. Characterization of amorphous multilayered ZnO-SnO2 heterostructure thin films and their field effect electronic properties

    International Nuclear Information System (INIS)

    Lee, Su-Jae; Hwang, Chi-Sun; Pi, Jae-Eun; Yang, Jong-Heon; Oh, Himchan; Cho, Sung Haeng; Cho, Kyoung-Ik; Chu, Hye Yong

    2014-01-01

    Multilayered ZnO-SnO 2 heterostructure thin films were produced using pulsed laser ablation of pie-shaped ZnO-SnO 2 oxides target, and their structural and field effect electronic transport properties were investigated as a function of the thickness of the ZnO and SnO 2 layers. The films have an amorphous multilayered heterostructure composed of the periodic stacking of the ZnO and SnO 2 layers. The field effect electronic properties of amorphous multilayered ZnO-SnO 2 heterostructure thin film transistors (TFTs) are highly dependent on the thickness of the ZnO and SnO 2 layers. The highest electron mobility of 37 cm 2 /V s, a low subthreshold swing of a 0.19 V/decade, a threshold voltage of 0.13 V, and a high drain current on-to-off ratio of ∼10 10 obtained for the amorphous multilayered ZnO(1.5 nm)-SnO 2 (1.5 nm) heterostructure TFTs. These results are presumed to be due to the unique electronic structure of an amorphous multilayered ZnO-SnO 2 heterostructure film consisting of ZnO, SnO 2 , and ZnO-SnO 2 interface layers

  18. Electronic structures and enhanced optical properties of blue phosphorene/transition metal dichalcogenides van der Waals heterostructures

    Science.gov (United States)

    Peng, Qiong; Wang, Zhenyu; Sa, Baisheng; Wu, Bo; Sun, Zhimei

    2016-01-01

    As a fast emerging topic, van der Waals (vdW) heterostructures have been proposed to modify two-dimensional layered materials with desired properties, thus greatly extending the applications of these materials. In this work, the stacking characteristics, electronic structures, band edge alignments, charge density distributions and optical properties of blue phosphorene/transition metal dichalcogenides (BlueP/TMDs) vdW heterostructures were systematically studied based on vdW corrected density functional theory. Interestingly, the valence band maximum and conduction band minimum are located in different parts of BlueP/MoSe2, BlueP/WS2 and BlueP/WSe2 heterostructures. The MoSe2, WS2 or WSe2 layer can be used as the electron donor and the BlueP layer can be used as the electron acceptor. We further found that the optical properties under visible-light irradiation of BlueP/TMDs vdW heterostructures are significantly improved. In particular, the predicted upper limit energy conversion efficiencies of BlueP/MoS2 and BlueP/MoSe2 heterostructures reach as large as 1.16% and 0.98%, respectively, suggesting their potential applications in efficient thin-film solar cells and optoelectronic devices. PMID:27553787

  19. Electronic structures and enhanced optical properties of blue phosphorene/transition metal dichalcogenides van der Waals heterostructures.

    Science.gov (United States)

    Peng, Qiong; Wang, Zhenyu; Sa, Baisheng; Wu, Bo; Sun, Zhimei

    2016-08-24

    As a fast emerging topic, van der Waals (vdW) heterostructures have been proposed to modify two-dimensional layered materials with desired properties, thus greatly extending the applications of these materials. In this work, the stacking characteristics, electronic structures, band edge alignments, charge density distributions and optical properties of blue phosphorene/transition metal dichalcogenides (BlueP/TMDs) vdW heterostructures were systematically studied based on vdW corrected density functional theory. Interestingly, the valence band maximum and conduction band minimum are located in different parts of BlueP/MoSe2, BlueP/WS2 and BlueP/WSe2 heterostructures. The MoSe2, WS2 or WSe2 layer can be used as the electron donor and the BlueP layer can be used as the electron acceptor. We further found that the optical properties under visible-light irradiation of BlueP/TMDs vdW heterostructures are significantly improved. In particular, the predicted upper limit energy conversion efficiencies of BlueP/MoS2 and BlueP/MoSe2 heterostructures reach as large as 1.16% and 0.98%, respectively, suggesting their potential applications in efficient thin-film solar cells and optoelectronic devices.

  20. Electron transport properties of indium oxide - indium nitride metal-oxide-semiconductor heterostructures

    International Nuclear Information System (INIS)

    Wang, C.Y.; Hauguth, S.; Polyakov, V.; Schwierz, F.; Cimalla, V.; Kups, T.; Himmerlich, M.; Schaefer, J.A.; Krischok, S.; Ambacher, O.; Morales, F.M.; Lozano, J.G.; Gonzalez, D.; Lebedev, V.

    2008-01-01

    The structural, chemical and electron transport properties of In 2 O 3 /InN heterostructures and oxidized InN epilayers are reported. It is shown that the accumulation of electrons at the InN surface can be manipulated by the formation of a thin surface oxide layer. The epitaxial In 2 O 3 /InN heterojunctions show an increase in the electron concentration due to the increasing band banding at the heterointerface. The oxidation of InN results in improved transport properties and in a reduction of the sheet carrier concentration of the InN epilayer very likely caused by a passivation of surface donors. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Influence of strain relaxation in axial [Formula: see text] nanowire heterostructures on their electronic properties.

    Science.gov (United States)

    Marquardt, Oliver; Krause, Thilo; Kaganer, Vladimir; Martín-Sánchez, Javier; Hanke, Michael; Brandt, Oliver

    2017-05-26

    We present a systematic theoretical study of the influence of elastic strain relaxation on the built-in electrostatic potentials and the electronic properties of axial [Formula: see text] nanowire (NW) heterostructures. Our simulations reveal that for a sufficiently large ratio between the thickness of the [Formula: see text] disk and the diameter of the NW, the elastic relaxation leads to a significant reduction of the built-in electrostatic potential in comparison to a planar system of similar layer thickness and In content. In this case, the ground state transition energies approach constant values with increasing thickness of the disk and only depend on the In content, a behavior usually associated to that of a quantum well free of built-in electrostatic potentials. We show that the structures under consideration are by no means field-free, and the built-in potentials continue to play an important role even for ultrathin NWs. In particular, strain and the resulting polarization potentials induce complex confinement features of electrons and holes, which depend on the In content, shape, and dimensions of the heterostructure.

  2. Heterostructure-based high-speed/high-frequency electronic circuit applications

    Science.gov (United States)

    Zampardi, P. J.; Runge, K.; Pierson, R. L.; Higgins, J. A.; Yu, R.; McDermott, B. T.; Pan, N.

    1999-08-01

    With the growth of wireless and lightwave technologies, heterostructure electronic devices are commodity items in the commercial marketplace [Browne J. Power-amplifier MMICs drive commercial circuits. Microwaves & RF, 1998. p. 116-24.]. In particular, HBTs are an attractive device for handset power amplifiers at 900 MHz and 1.9 GHz for CDMA applications [Lum E. GaAs technology rides the wireless wave. Proceedings of the 1997 GaAs IC Symposium, 1997. p. 11-13; "Rockwell Ramps Up". Compound Semiconductor, May/June 1997.]. At higher frequencies, both HBTs and p-HEMTs are expected to dominate the marketplace. For high-speed lightwave circuit applications, heterostructure based products on the market for OC-48 (2.5 Gb/s) and OC-192 (10 Gb/s) are emerging [http://www.nb.rockwell.com/platforms/network_access/nahome.html#5.; http://www.nortel.com/technology/opto/receivers/ptav2.html.]. Chips that operate at 40 Gb/ have been demonstrated in a number of research laboratories [Zampardi PJ, Pierson RL, Runge K, Yu R, Beccue SM, Yu J, Wang KC. hybrid digital/microwave HBTs for >30 Gb/s optical communications. IEDM Technical Digest, 1995. p. 803-6; Swahn T, Lewin T, Mokhtari M, Tenhunen H, Walden R, Stanchina W. 40 Gb/s 3 Volt InP HBT ICs for a fiber optic demonstrator system. Proceedings of the 1996 GaAs IC Symposium, 1996. p. 125-8; Suzuki H, Watanabe K, Ishikawa K, Masuda H, Ouchi K, Tanoue T, Takeyari R. InP/InGaAs HBT ICs for 40 Gbit/s optical transmission systems. Proceedings of the 1997 GaAs IC Symposium, 1997. p. 215-8]. In addition to these two markets, another area where heterostructure devices are having significant impact is for data conversion [Walden RH. Analog-to digital convertor technology comparison. Proceedings of the 1994 GaAs IC Symposium, 1994. p. 217-9; Poulton K, Knudsen K, Corcoran J, Wang KC, Nubling RB, Chang M-CF, Asbeck PM, Huang RT. A 6-b, 4 GSa/s GaAs HBT ADC. IEEE J Solid-State Circuits 1995;30:1109-18; Nary K, Nubling R, Beccue S, Colleran W

  3. Electrostatics of electron-hole interactions in van der Waals heterostructures

    Science.gov (United States)

    Cavalcante, L. S. R.; Chaves, A.; Van Duppen, B.; Peeters, F. M.; Reichman, D. R.

    2018-03-01

    The role of dielectric screening of electron-hole interaction in van der Waals heterostructures is theoretically investigated. A comparison between models available in the literature for describing these interactions is made and the limitations of these approaches are discussed. A simple numerical solution of Poisson's equation for a stack of dielectric slabs based on a transfer matrix method is developed, enabling the calculation of the electron-hole interaction potential at very low computational cost and with reasonable accuracy. Using different potential models, direct and indirect exciton binding energies in these systems are calculated within Wannier-Mott theory, and a comparison of theoretical results with recent experiments on excitons in two-dimensional materials is discussed.

  4. Van der Waals Epitaxy of GaSe/Graphene Heterostructure: Electronic and Interfacial Properties.

    Science.gov (United States)

    Ben Aziza, Zeineb; Henck, Hugo; Pierucci, Debora; Silly, Mathieu G; Lhuillier, Emmanuel; Patriarche, Gilles; Sirotti, Fausto; Eddrief, Mahmoud; Ouerghi, Abdelkarim

    2016-10-07

    Stacking two-dimensional materials in so-called van der Waals (vdW) heterostructures, like the combination of GaSe and graphene, provides the ability to obtain hybrid systems which are suitable to design optoelectronic devices. Here, we report the structural and electronic properties of the direct growth of multilayered GaSe by Molecular beam Epitaxy (MBE) on graphene. Reflection high-energy electron diffraction (RHEED) images exhibited sharp streaky features indicative of high quality GaSe layer produced via a vdW epitaxy. Micro-Raman spectroscopy showed that, after the vdW hetero-interface formation, the Raman signature of pristine graphene is preserved. However, the GaSe film tuned the charge density of graphene layer by shifting the Dirac point by about 80 meV toward lower binding energies, attesting an electron transfer from graphene to GaSe. Angle-resolved photoemission spectroscopy (ARPES) measurements showed that the maximum of the valence band of few layers of GaSe are located at the Γ point at a binding energy of about -0.73 eV relatively to the Fermi level (p-type doping). From the ARPES measurements, a hole effective mass defined along the ΓM direction and equal to about m*/m0 = -1.1 was determined. By coupling the ARPES data with high resolution X-ray photoemission spectroscopy (HR-XPS) measurements, the Schottky interface barrier height was estimated to be 1.2 eV. These findings allow deeper understanding of the interlayer interactions and the electronic structure of GaSe/graphene vdW heterostructure.

  5. Bulk and interface quantum states of electrons in multi-layer heterostructures with topological materials

    Science.gov (United States)

    Nikolic, Aleksandar; Zhang, Kexin; Barnes, C. H. W.

    2018-06-01

    In this article we describe the bulk and interface quantum states of electrons in multi-layer heterostructures in one dimension, consisting of topological insulators (TIs) and topologically trivial materials. We use and extend an effective four-band continuum Hamiltonian by introducing position dependence to the eight material parameters of the Hamiltonian. We are able to demonstrate complete conduction-valence band mixing in the interface states. We find evidence for topological features of bulk states of multi-layer TI heterostructures, as well as demonstrating both complete and incomplete conduction-valence band inversion at different bulk state energies. We show that the linear k z terms in the low-energy Hamiltonian, arising from overlap of p z orbitals between different atomic layers in the case of chalcogenides, control the amount of tunneling from TIs to trivial insulators. Finally, we show that the same linear k z terms in the low-energy Hamiltonian affect the material’s ability to form the localised interface state, and we demonstrate that due to this effect the spin and probability density localisation in a thin film of Sb2Te3 is incomplete. We show that changing the parameter that controls the magnitude of the overlap of p z orbitals affects the transport characteristics of the topologically conducting states, with incomplete topological state localisation resulting in increased backscattering.

  6. Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

    Energy Technology Data Exchange (ETDEWEB)

    Morrison, C., E-mail: c.morrison.2@warwick.ac.uk; Casteleiro, C.; Leadley, D. R.; Myronov, M. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)

    2016-09-05

    The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm{sup 2}/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m{sub 0}. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour, analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.

  7. Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

    Science.gov (United States)

    Morrison, C.; Casteleiro, C.; Leadley, D. R.; Myronov, M.

    2016-09-01

    The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm2/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m0. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour, analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.

  8. Correlated electronic properties of different SrIrO{sub 3}/SrTiO{sub 3} heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Kraberger, Gernot J.; Aichhorn, Markus [Institute of Theoretical and Computational Physics, NAWI Graz, Graz University of Technology, Petersgasse 16, 8010 Graz (Austria)

    2016-07-01

    Strontium iridates are materials that combine strong electronic correlations with pronounced spin-orbit coupling, giving rise to fascinating physical properties. Strategies to purposefully influence and design these materials are a crucial step to further advance this field. A highly promising candidate for achieving this goal is the formation of heterostructures with other materials. Motivated by this quest, we perform calculations within the DFT+DMFT framework to investigate how the geometry of heterostructures of perovskite SrIrO{sub 3} with SrTiO{sub 3} influences their correlated electronic structure. We explore the differences between (001)- and (111)-stacked heterostructures, where the latter are particularly interesting because they form buckled honeycomb lattices that have non-trivial topological properties. For the (001)-heterostructures the effect of varying the thickness of the SrIrO{sub 3} layers, and thus their effective dimensionality, are studied. As an important ingredient we have to consider the effect of lattice distortions - in the form of a rotation of the oxygen cages - on the electronic correlations. We argue how the interplay of all these factors together allows a targeted modification of the electronic properties of the material.

  9. Out-of-plane strain and electric field tunable electronic properties and Schottky contact of graphene/antimonene heterostructure

    Science.gov (United States)

    Phuc, Huynh V.; Hieu, Nguyen N.; Hoi, Bui D.; Phuong, Le T. T.; Hieu, Nguyen V.; Nguyen, Chuong V.

    2017-12-01

    In this paper, the electronic properties of graphene/monolayer antimonene (G/m-Sb) heterostructure have been studied using the density functional theory (DFT). The effects of out-of-plane strain (interlayer coupling) and electric field on the electronic properties and Schottky contact of the G/m-Sb heterostructure are also investigated. The results show that graphene is bound to m-Sb layer by a weak van-der-Waals interaction with the interlayer distance of 3.50 Å and the binding energy per carbon atom of -39.62 meV. We find that the n-type Schottky contact is formed at the G/m-Sb heterostructure with the Schottky barrier height (SBH) of 0.60 eV. By varying the interlayer distance between graphene and the m-Sb layer we can change the n-type and p-type SBH at the G/m-Sb heterostructure. Especially, we find the transformation from n-type to p-type Schottky contact with decreasing the interlayer distance. Furthermore, the SBH and the Schottky contact could be controlled by applying the perpendicular electric field. With the positive electric field, electrons can easily transfer from m-Sb to graphene layer, leading to the transition from n-type to p-type Schottky contact.

  10. Electronic structure and STM images simulation of defects on hBN/ black-phosphorene heterostructures: A theoretical study

    Science.gov (United States)

    Ospina, D. A.; Cisternas, E.; Duque, C. A.; Correa, J. D.

    2018-03-01

    By first principles calculations which include van der Waals interactions, we studied the electronic structure of hexagonal boron-nitride/black-phosphorene heterostructures (hBN/BP). In particular the role of several kind of defects on the electronic properties of black-phosphorene monolayer and hBN/BP heterostructure was analyzed. The defects under consideration were single and double vacancies, as well Stone-Wale type defects, all of them present in the phosphorene layer. In this way, we found that the electronic structure of the hBN/BP is modified according the type of defect that is introduced. As a remarkable feature, our results show occupied states at the Fermi Level introduced by a single vacancy in the energy gap of the hBN/BP heterostructure. Additionally, we performed simulations of scanning tunneling microscopy images. These simulations show that is possible to discriminate the kind of defect even when the black-phosphorene monolayer is part of the heterostructure hBN/BP. Our results may help to discriminate among several kind of defects during experimental characterization of these novel materials.

  11. Transfer matrix approach to electron transport in monolayer MoS2/MoO x heterostructures

    Science.gov (United States)

    Li, Gen

    2018-05-01

    Oxygen plasma treatment can introduce oxidation into monolayer MoS2 to transfer MoS2 into MoO x , causing the formation of MoS2/MoO x heterostructures. We find the MoS2/MoO x heterostructures have the similar geometry compared with GaAs/Ga1‑x Al x As semiconductor superlattice. Thus, We employ the established transfer matrix method to analyse the electron transport in the MoS2/MoO x heterostructures with double-well and step-well geometries. We also considere the coupling between transverse and longitudinal kinetic energy because the electron effective mass changes spatially in the MoS2/MoO x heterostructures. We find the resonant peaks show red shift with the increasing of transverse momentum, which is similar to the previous work studying the transverse-momentum-dependent transmission in GaAs/Ga1‑x Al x As double-barrier structure. We find electric field can enhance the magnitude of peaks and intensify the coupling between longitudinal and transverse momentums. Moreover, higher bias is applied to optimize resonant tunnelling condition to show negative differential effect can be observed in the MoS2/MoO x system.

  12. Ferromagnetic semiconductor-metal transition in heterostructures of electron doped europium monoxide

    International Nuclear Information System (INIS)

    Stollenwerk, Tobias

    2013-09-01

    In the present work, we develop and solve a self-consistent theory for the description of the simultaneous ferromagnetic semiconductor-metal transition in electron doped Europium monoxide. We investigate two different types of electron doping, Gadolinium impurities and Oxygen vacancies. Besides the conduction band occupation, we can identify low lying spin fluctuations on magnetic impurities as the driving force behind the doping induced enhancement of the Curie temperature. Moreover, we predict the signatures of these magnetic impurities in the spectra of scanning tunneling microscope experiments. By extending the theory to allow for inhomogeneities in one spatial direction, we are able to investigate thin films and heterostructures of Gadolinium doped Europium monoxide. Here, we are able to reproduce the experimentally observed decrease of the Curie temperature with the film thickness. This behavior is attributed to missing coupling partners of the localized 4f moments as well as to an electron depletion at the surface which leads to a reduction of the number of itinerant electrons. By investigating the influence of a metallic substrate onto the phase transition in Gadolinium doped Europium monoxide, we find that the Curie temperature can be increased up to 20%. However, as we show, the underlying mechanism of metal-interface induced charge carrier accumulation is inextricably connected to a suppression of the semiconductor-metal transition.

  13. Ferromagnetic semiconductor-metal transition in heterostructures of electron doped europium monoxide

    Energy Technology Data Exchange (ETDEWEB)

    Stollenwerk, Tobias

    2013-09-15

    In the present work, we develop and solve a self-consistent theory for the description of the simultaneous ferromagnetic semiconductor-metal transition in electron doped Europium monoxide. We investigate two different types of electron doping, Gadolinium impurities and Oxygen vacancies. Besides the conduction band occupation, we can identify low lying spin fluctuations on magnetic impurities as the driving force behind the doping induced enhancement of the Curie temperature. Moreover, we predict the signatures of these magnetic impurities in the spectra of scanning tunneling microscope experiments. By extending the theory to allow for inhomogeneities in one spatial direction, we are able to investigate thin films and heterostructures of Gadolinium doped Europium monoxide. Here, we are able to reproduce the experimentally observed decrease of the Curie temperature with the film thickness. This behavior is attributed to missing coupling partners of the localized 4f moments as well as to an electron depletion at the surface which leads to a reduction of the number of itinerant electrons. By investigating the influence of a metallic substrate onto the phase transition in Gadolinium doped Europium monoxide, we find that the Curie temperature can be increased up to 20%. However, as we show, the underlying mechanism of metal-interface induced charge carrier accumulation is inextricably connected to a suppression of the semiconductor-metal transition.

  14. Interlayer coupling effects on electronic properties of the phosphorene/h-BN van der Walls heterostructure: A first principles investigation

    Science.gov (United States)

    Luo, Yanwei; Zhang, Shuai; Chen, Weiguang; Jia, Yu

    2018-04-01

    By using first-principles calculations, we systemically investigate the electronic properties of phosphorene/h-BN heterostructure with different interlayer distances. Our results show that the electronic states in the vicinity of the Fermi level are completely dominated by phosphorene, and the system exhibits type-I band alignment consequently. Moreover, we also reveal the variation of the band structure of phosphorene/h-BN heterostructure with different interlayer distances. The band gap undergoes a direct to indirect transition as decreasing the interlayer distance. The mechanism of the band gap transition can be attributed to the different energy levels shifts, according to different electronic orbital characters on the band edge. In specific, the energy level of the P_pz bonding state shifts up while that of the P_px,py bonding state falls down, along with the enhancement of the interactions between phosphorene and h-BN.

  15. Magnetoresistance of a two-dimensional electron gas in a random magnetic field

    DEFF Research Database (Denmark)

    Smith, Anders; Taboryski, Rafael Jozef; Hansen, Luise Theil

    1994-01-01

    We report magnetoresistance measurements on a two-dimensional electron gas made from a high-mobility GaAs/AlxGa1-xAs heterostructure, where the externally applied magnetic field was expelled from regions of the semiconductor by means of superconducting lead grains randomly distributed on the surf...... on the surface of the sample. A theoretical explanation in excellent agreement with the experiment is given within the framework of the semiclassical Boltzmann equation. © 1994 The American Physical Society...

  16. Electron collisions in gas switches

    International Nuclear Information System (INIS)

    Christophorou, L.G.

    1989-01-01

    Many technologies rely on the conduction/insulation properties of gaseous matter for their successful operation. Many others (e.g., pulsed power technologies) rely on the rapid change (switching or modulation) of the properties of gaseous matter from an insulator to a conductor and vice versa. Studies of electron collision processes in gases aided the development of pulsed power gas switches, and in this paper we shall briefly illustrate the kind of knowledge on electron collision processes which is needed to optimize the performance of such switching devices. To this end, we shall refer to three types of gas switches: spark gap closing, self-sustained diffuse discharge closing, and externally-sustained diffuse discharge opening. 24 refs., 15 figs., 2 tabs

  17. Weak localization and electron-electron interaction in modulation doped GaAs/AlGaAs heterostructures

    International Nuclear Information System (INIS)

    Taboryski, R.; Lindelof, P.E.

    1990-01-01

    The first heterostructure wafer only had one electronic subband at the GaAs/AlGaAs interface populated. Weak localization magnetoresistance was interpreted by a theory valid to relatively high magnetic fields and also valid for electrons with a long mean free path. The adjustable parameter in fitting the magnetoresistance was in each case the phasebreaking relaxation time, which could then subsequently be plotted as a function of temperature. The temperature dependence of the phasebreaking rate could be interpreted on the basic of existing theories, but the residual relaxation rate at the lowest temperature remains so far unexplained. Already at low magnetic fields the weak localization magnetoresistance saturates, indicating a complete quench of weak localization. We find that the value of saturation (i.e. the total weak localization at the appropriate temperature) was smaller than predicted by the existing theories. At magnetic fields of the order of the inverse electron mobility, a quadratic magnetoresistance show up in our experiments. This quadratic magnetoresistance corresponds to corrections to the conductivity of the order of e 2 /h. Whereas we find that the temperature dependence of this conductivity correction is well in agreement with predicted effects of electron-electron interaction, the dependence on mobility, which we can measure via our ion implantation, is larger than any existing theory predicts, yet still in the ballpark of the conductance quantum. (orig./BHO)

  18. Layer-dependent electronic properties of phosphorene-like materials and phosphorene-based van der Waals heterostructures.

    Science.gov (United States)

    Huang, Y C; Chen, X; Wang, C; Peng, L; Qian, Q; Wang, S F

    2017-06-29

    Black phosphorus is a layered semiconducting allotrope of phosphorus with high carrier mobility. Its monolayer form, phosphorene, is an extremely fashionable two-dimensional material which has promising potential in transistors, optoelectronics and electronics. However, phosphorene-like analogues, especially phosphorene-based heterostructures and their layer-controlled electronic properties, are rarely systematically investigated. In this paper, the layer-dependent structural and electronic properties of phosphorene-like materials, i.e., mono- and few-layer MXs (M = Sn, Ge; X = S, Se), are first studied via first-principles calculations, and then the band edge position of these MXs as well as mono- and few-layer phosphorene are aligned. It is revealed that van der Waals heterostructures with a Moiré superstructure formed by mutual coupling among MXs and among MXs and few-layer phosphorene are able to show type-I or type-II characteristics and a I-II or II-I transition can be induced by adjusting the number of layers. Our work is expected to yield a new family of phosphorene-based semiconductor heterostructures with tunable electronic properties through altering the number of layers of the composite.

  19. Electron density window for best frequency performance, lowest phase noise and slowest degradation of GaN heterostructure field-effect transistors

    International Nuclear Information System (INIS)

    Matulionis, Arvydas

    2013-01-01

    The problems in the realm of nitride heterostructure field-effect transistors (HFETs) are discussed in terms of a novel fluctuation–dissipation-based approach impelled by a recent demonstration of strong correlation of hot-electron fluctuations with frequency performance and degradation of the devices. The correlation has its genesis in the dissipation of the LO-mode heat accumulated by the non-equilibrium longitudinal optical phonons (hot phonons) confined in the channel that hosts the high-density hot-electron gas subjected to a high electric field. The LO-mode heat causes additional scattering of hot electrons and facilitates defect formation in a different manner than the conventional heat contained mainly in the acoustic phonon mode. We treat the heat dissipation problem in terms of the hot-phonon lifetime responsible for the conversion of the non-migrant hot phonons into migrant acoustic modes and other vibrations. The lifetime is measured over a wide range of electron density and supplied electric power. The optimal conditions for the dissipation of the LO-mode heat are associated with the plasmon-assisted disintegration of hot phonons. Signatures of plasmons are experimentally resolved in fluctuations, dissipation, hot-electron transport, transistor frequency performance, transistor phase noise and transistor reliability. In particular, a slower degradation and a faster operation of GaN-based HFETs take place inside the electron density window where the resonant plasmon-assisted ultrafast dissipation of the LO-mode heat comes into play. A novel heterostructure design for the possible improvement of HFET performance is proposed, implemented and tested. (invited review)

  20. Electric-field and strain-tunable electronic properties of MoS2/h-BN/graphene vertical heterostructures.

    Science.gov (United States)

    Zan, Wenyan; Geng, Wei; Liu, Huanxiang; Yao, Xiaojun

    2016-01-28

    Vertical heterostructures of MoS2/h-BN/graphene have been successfully fabricated in recent experiments. Using first-principles analysis, we show that the structural and electronic properties of such vertical heterostructures are sensitive to applied vertical electric fields and strain. The applied electric field not only enhances the interlayer coupling but also linearly controls the charge transfer between graphene and MoS2 layers, leading to a tunable doping in graphene and controllable Schottky barrier height. Applied biaxial strain could weaken the interlayer coupling and results in a slight shift of graphene's Dirac point with respect to the Fermi level. It is of practical importance that the tunable electronic properties by strain and electric fields are immune to the presence of sulfur vacancies, the most common defect in MoS2.

  1. Direct Growth of High Mobility and Low-Noise Lateral MoS2 -Graphene Heterostructure Electronics.

    Science.gov (United States)

    Behranginia, Amirhossein; Yasaei, Poya; Majee, Arnab K; Sangwan, Vinod K; Long, Fei; Foss, Cameron J; Foroozan, Tara; Fuladi, Shadi; Hantehzadeh, Mohammad Reza; Shahbazian-Yassar, Reza; Hersam, Mark C; Aksamija, Zlatan; Salehi-Khojin, Amin

    2017-08-01

    Reliable fabrication of lateral interfaces between conducting and semiconducting 2D materials is considered a major technological advancement for the next generation of highly packed all-2D electronic circuitry. This study employs seed-free consecutive chemical vapor deposition processes to synthesize high-quality lateral MoS 2 -graphene heterostructures and comprehensively investigated their electronic properties through a combination of various experimental techniques and theoretical modeling. These results show that the MoS 2 -graphene devices exhibit an order of magnitude higher mobility and lower noise metrics compared to conventional MoS 2 -metal devices as a result of energy band rearrangement and smaller Schottky barrier height at the contacts. These findings suggest that MoS 2 -graphene in-plane heterostructures are promising materials for the scale-up of all-2D circuitry with superlative electrical performance. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Efficient Ab-Initio Electron Transport Calculations for Heterostructures by the Nonequilibrium Green’s Function Method

    Directory of Open Access Journals (Sweden)

    Hirokazu Takaki

    2014-01-01

    Full Text Available We present an efficient computation technique for ab-initio electron transport calculations based on density functional theory and the nonequilibrium Green’s function formalism for application to heterostructures with two-dimensional (2D interfaces. The computational load for constructing the Green’s functions, which depends not only on the energy but also on the 2D Bloch wave vector along the interfaces and is thus catastrophically heavy, is circumvented by parallel computational techniques with the message passing interface, which divides the calculations of the Green’s functions with respect to energy and wave vectors. To demonstrate the computational efficiency of the present code, we perform ab-initio electron transport calculations of Al(100-Si(100-Al(100 heterostructures, one of the most typical metal-semiconductor-metal systems, and show their transmission spectra, density of states (DOSs, and dependence on the thickness of the Si layers.

  3. Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure

    International Nuclear Information System (INIS)

    He, Xiaoguang; Zhao, Degang; Liu, Wei; Yang, Jing; Li, Xiaojing; Li, Xiang

    2016-01-01

    The formation of 2DEG in AlGaN/GaN heterostructure is discussed in detail. A misunderstanding about the 2DEG sheet density expression is clarified. It is predicted by theoretical analysis and validated by self-consistent Schrodinger–Poisson numerical simulation that under the force of GaN polarization, large amounts of electrons will accumulate at the GaN/substrate interface in AlGaN/GaN/substrate HEMT structure. - Highlights: • The formation of 2DEG in AlGaN/GaN heterostructure is discussed in detail. • Self-consistent Schrodinger–Poisson numerical simulation is used to modulate the AlGaN/GaN/substrate structure. • It is predicted by that large amounts of electrons will accumulate at the GaN/substrate interface.

  4. Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    He, Xiaoguang; Zhao, Degang, E-mail: dgzhao@red.semi.ac.cn; Liu, Wei; Yang, Jing; Li, Xiaojing; Li, Xiang

    2016-06-15

    The formation of 2DEG in AlGaN/GaN heterostructure is discussed in detail. A misunderstanding about the 2DEG sheet density expression is clarified. It is predicted by theoretical analysis and validated by self-consistent Schrodinger–Poisson numerical simulation that under the force of GaN polarization, large amounts of electrons will accumulate at the GaN/substrate interface in AlGaN/GaN/substrate HEMT structure. - Highlights: • The formation of 2DEG in AlGaN/GaN heterostructure is discussed in detail. • Self-consistent Schrodinger–Poisson numerical simulation is used to modulate the AlGaN/GaN/substrate structure. • It is predicted by that large amounts of electrons will accumulate at the GaN/substrate interface.

  5. The gas electron multiplier (GEM)

    CERN Document Server

    Bouclier, Roger; Dominik, Wojciech; Hoch, M; Labbé, J C; Million, Gilbert; Ropelewski, Leszek; Sauli, Fabio; Sharma, A

    1996-01-01

    We describe operating priciples and results obtained with a new detector component: the Gas Electrons Multiplier (GEM). Consisting of a thin composite sheet with two metal layers separated by a thin insulator, and pierced by a regular matrix of open channels, the GEM electrode, inserted on the path of electrons in a gas detector, allows to transfer the charge with an amplification factor approaching ten. Uniform response and high rate capability are demonstrated. Coupled to another device, multiwire or micro-strip chamber, the GEM electrode permit to obtain higher gains or less critical operation; separation of the sensitive (conversion) volume and the detection volume has other advantages, as a built-in delay (useful for triggering purposes) and the possibility of applying high fields on the photo-cathode of ring imaging detectors to improve efficiency. Multiple GEM grids in the same gas volume allow to obtain large amplification factors in a succession of steps, leading to the realization of an effective ga...

  6. Effects of interfacial Fe electronic structures on magnetic and electronic transport properties in oxide/NiFe/oxide heterostructures

    International Nuclear Information System (INIS)

    Liu, Qianqian; Chen, Xi; Zhang, Jing-Yan; Yang, Meiyin; Li, Xu-Jing; Jiang, Shao-Long; Liu, Yi-Wei; Cao, Yi; Wu, Zheng-Long; Feng, Chun; Ding, Lei; Yu, Guang-Hua

    2015-01-01

    Highlights: • The magnetic and transport properties of oxide/NiFe/oxide films were studied. • The oxide (SiO 2 , MgO and HfO 2 ) has different elemental electronegativity. • Redox reaction at different NiFe/oxide interface is dependent on the oxide layer. • Different interfacial electronic structures shown by XPS influence the properties. - Abstract: We report that the magnetic and electronic transport properties in oxide/NiFe(2 nm)/oxide film (oxide = SiO 2 , MgO or HfO 2 ) are strongly influenced by the electronic structure of NiFe/oxide interface. Magnetic measurements show that there exist magnetic dead layers in the SiO 2 sandwiched film and MgO sandwiched film, whereas there is no magnetic dead layer in the HfO 2 sandwiched film. Furthermore, in the ultrathin SiO 2 sandwiched film no magnetoresistance (MR) is detected, while in the ultrathin MgO sandwiched film and HfO 2 sandwiched film the MR ratios reach 0.35% and 0.88%, respectively. The investigation by X-ray photoelectron spectroscopy reveals that the distinct interfacial redox reactions, which are dependent on the oxide layers, lead to the variation of magnetic and transport properties in different oxide/NiFe/oxide heterostructures

  7. GEM the gas electron multiplier

    CERN Document Server

    Sauli, Fabio

    1997-01-01

    We describe the basic structure and operation of a new device, the Gas Electron Multiplier. Consisting in a polymer foil, metal-clad on both sides and perforated by a high density of holes, the GEM mesh allows to pre-amplify charges released in the gas with good uniformity and energy. Coupled to a micro-strip plate, the pre-amplification element allows to preserve high rate capability and resolution at considerably lower operating voltages, thus completely eliminating discharges and instabilities. Several GEM grids can be operated in cascade; charge gains are large enough to allow detection of signals in the ionization mode on the last element, permitting the use of a simple printed circuit as read-out electrode. Two-dimensional read-out can then be easily implemented. A new generation of simple, reliable and cheap fast position sensitive detectors seems at hand.

  8. Ferroelectric Polarization-Modulated Interfacial Fine Structures Involving Two-Dimensional Electron Gases in Pb(Zr,Ti)O3/LaAlO3/SrTiO3 Heterostructures.

    Science.gov (United States)

    Wang, Shuangbao; Bai, Yuhang; Xie, Lin; Li, Chen; Key, Julian D; Wu, Di; Wang, Peng; Pan, Xiaoqing

    2018-01-10

    Interfacial fine structures of bare LaAlO 3 /SrTiO 3 (LAO/STO) heterostructures are compared with those of LAO/STO heterostructures capped with upward-polarized Pb(Zr 0.1 ,Ti 0.9 )O 3 (PZT up ) or downward-polarized Pb(Zr 0.5 ,Ti 0.5 )O 3 (PZT down ) overlayers by aberration-corrected scanning transmission electron microscopy experiments. By combining the acquired electron energy-loss spectroscopy mapping, we are able to directly observe electron transfer from Ti 4+ to Ti 3+ and ionic displacements at the interface of bare LAO/STO and PZT down /LAO/STO heterostructure unit cell by unit cell. No evidence of Ti 3+ is observed at the interface of the PZT up /LAO/STO samples. Furthermore, the confinement of the two-dimensional electron gas (2DEG) at the interface is determined by atomic-column spatial resolution. Compared with the bare LAO/STO interface, the 2DEG density at the LAO/STO interface is enhanced or depressed by the PZT down or PZT up overlayer, respectively. Our microscopy studies shed light on the mechanism of ferroelectric modulation of interfacial transport at polar/nonpolar oxide heterointerfaces, which may facilitate applications of these materials as nonvolatile memory.

  9. BAND ALIGNMENT OF ULTRATHIN GIZO/SiO2/Si HETEROSTRUCTURE DETERMINED BY ELECTRON SPECTROSCOPY

    Directory of Open Access Journals (Sweden)

    Hee Jae Kang2

    2011-11-01

    Full Text Available Amorphous GaInZnO (GIZO thin films are grown on SiO2/Si substrate by the RF magnetron sputtering method. By thecombination of measured band gaps from reflection energy loss spectroscopy (REELS spectra and valence band fromX-ray photo-electron spectroscopy (XPS spectra, we have demonstrated the energy band alignment of GIZO thin films.The band gap values are 3.2 eV, 3.2 eV, 3.4eV and 3.6eV for the concentration ratios of Ga: In: Zn in GIZO thin filmsare 1:1:1, 2:2:1, 3:2:1 and 4:2:1, respectively. These are attributed to the larger band gap energy of Ga2O3 comparedwith In2O3 and ZnO. The valence band offsets (ΔEv decrease from 2.18 to 1.68 eV with increasing amount of Ga inGIZO thin films for GIZO1 to GIZO4, respectively. These experimental values of band gap and valence band offsetwill provide the further understanding in the fundamental properties of GIZO/SiO2/Si heterostructure, which will beuseful in the design, modeling and analysis of the performance devices applications.

  10. Magnetic and electronic properties of Fe3O4/graphene heterostructures: First principles perspective

    KAUST Repository

    Mi, Wenbo; Yang, Hua; Cheng, Yingchun; Chen, Guifeng; Bai, Haili

    2013-01-01

    Magnetic and electronic properties of Fe3O4(111)/graphene heterostructures are investigated by first principles calculations. Different structural models have been considered, which differ in the interface termination of Fe3O4(111) surface with respect to the same monolayer graphene. In three models, the magnetic moment of Fe(A) has a major change due to less O atoms surrounding Fe(A) atoms than Fe(B). Magnetic moment is enhanced by 8.5%, 18.5%, and 8.7% for models (a), (b), and (c), respectively. Furthermore, the spin polarization of models (a) and (c) is lowered due to the simultaneous occurrence of density of states of spin-up Fe(A) and spin-down Fe(B) at Fermi lever. The spin polarization of model (b) remains the same as that of bulk Fe3O4. Our results suggest that different interface terminations and Fe(A) play an important role in determining the magnetism strength and spin polarization.

  11. Magnetic and electronic properties of Fe3O4/graphene heterostructures: First principles perspective

    KAUST Repository

    Mi, Wenbo

    2013-02-27

    Magnetic and electronic properties of Fe3O4(111)/graphene heterostructures are investigated by first principles calculations. Different structural models have been considered, which differ in the interface termination of Fe3O4(111) surface with respect to the same monolayer graphene. In three models, the magnetic moment of Fe(A) has a major change due to less O atoms surrounding Fe(A) atoms than Fe(B). Magnetic moment is enhanced by 8.5%, 18.5%, and 8.7% for models (a), (b), and (c), respectively. Furthermore, the spin polarization of models (a) and (c) is lowered due to the simultaneous occurrence of density of states of spin-up Fe(A) and spin-down Fe(B) at Fermi lever. The spin polarization of model (b) remains the same as that of bulk Fe3O4. Our results suggest that different interface terminations and Fe(A) play an important role in determining the magnetism strength and spin polarization.

  12. Vibrational Properties of h-BN and h-BN-Graphene Heterostructures Probed by Inelastic Electron Tunneling Spectroscopy.

    Science.gov (United States)

    Jung, Suyong; Park, Minkyu; Park, Jaesung; Jeong, Tae-Young; Kim, Ho-Jong; Watanabe, Kenji; Taniguchi, Takashi; Ha, Dong Han; Hwang, Chanyong; Kim, Yong-Sung

    2015-11-13

    Inelastic electron tunneling spectroscopy is a powerful technique for investigating lattice dynamics of nanoscale systems including graphene and small molecules, but establishing a stable tunnel junction is considered as a major hurdle in expanding the scope of tunneling experiments. Hexagonal boron nitride is a pivotal component in two-dimensional Van der Waals heterostructures as a high-quality insulating material due to its large energy gap and chemical-mechanical stability. Here we present planar graphene/h-BN-heterostructure tunneling devices utilizing thin h-BN as a tunneling insulator. With much improved h-BN-tunneling-junction stability, we are able to probe all possible phonon modes of h-BN and graphite/graphene at Γ and K high symmetry points by inelastic tunneling spectroscopy. Additionally, we observe that low-frequency out-of-plane vibrations of h-BN and graphene lattices are significantly modified at heterostructure interfaces. Equipped with an external back gate, we can also detect high-order coupling phenomena between phonons and plasmons, demonstrating that h-BN-based tunneling device is a wonderful playground for investigating electron-phonon couplings in low-dimensional systems.

  13. Hot electron light emission in gallium arsenide/aluminium(x) gallium(1-x) arsenic heterostructures

    Science.gov (United States)

    Teke, Ali

    In this thesis we have demonstrated the operation of a novel tunable wavelength surface light emitting device. The device is based on a p-GaAs, and n-Ga1- xAlxAs heterojunction containing an inversion layer on the p- side, and GaAs quantum wells on the n- side, and, is referred to as HELLISH-2 (Hot Electron Light Emitting and Lasing in Semiconductor Heterostructure-Type 2). The devices utilise hot electron longitudinal transport and, therefore, light emission is independent of the polarity of the applied voltage. The wavelength of the emitted light can be tuned with the applied bias from GaAs band-to-band transition in the inversion layer to e1-hh1 transition in the quantum wells. In this work tunable means that the device can be operated at either single or multiple wavelength emission. The operation of the device requires only two diffused in point contacts. In this project four HELLISH-2 samples coded as ES1, ES2, ES6 and QT919 have been studied. First three samples were grown by MBE and the last one was grown by MOVPE techniques. ES1 was designed for single and double wavelength operation. ES2 was a control sample used to compare our results with previous work on HELLISH-2 and ES6 was designed for single, double and triple wavelength operation. Theoretical modelling of the device operation was carried out and compared with the experimental results. HELLISH-2 structure was optimised for low threshold and high efficiency operation as based on our model calculations. The last sample QT919 has been designed as an optimised device for single and double wavelength operation like ES1. HELLISH-2 has a number of advantages over the conventional light emitters, resulting in some possible applications, such as light logic gates and wavelength division multiplexing in optoelectronic.

  14. Effect of the δ-potential on spin-dependent electron tunneling in double barrier semiconductor heterostructure

    Science.gov (United States)

    Chandrasekar, L. Bruno; Gnanasekar, K.; Karunakaran, M.

    2018-06-01

    The effect of δ-potential was studied in GaAs/Ga0.6Al0·4As double barrier heterostructure with Dresselhaus spin-orbit interaction. The role of barrier height and position of the δ- potential in the well region was analysed on spin-dependent electron tunneling using transfer matrix method. The spin-separation between spin-resonances on energy scale depends on both height and position of the δ- potential, whereas the tunneling life time of electrons highly influenced by the position of the δ- potential and not on the height. These results might be helpful for the fabrication of spin-filters.

  15. A radio-frequency single-electron transistor based on an InAs/InP heterostructure nanowire

    DEFF Research Database (Denmark)

    Nilsson, Henrik A.; Duty, Tim; Abay, Simon

    2008-01-01

    We demonstrate radio frequency single-electron transistors fabricated from epitaxially grown InAs/InP heterostructure nanowires. Two sets of double-barrier wires with different barrier thicknesses were grown. The wires were suspended 15 nm above a metal gate electrode. Electrical measurements...... on a high-resistance nanowire showed regularly spaced Coulomb oscillations at a gate voltage from −0.5 to at least 1.8 V. The charge sensitivity was measured to 32 µerms Hz−1/2 at 1.5 K. A low-resistance single-electron transistor showed regularly spaced oscillations only in a small gate-voltage region just...

  16. Investigation of thin films, heterostructures and devices of ceramic superconductors by means of high-resolution electron microscopy

    International Nuclear Information System (INIS)

    Jia Chunlin.

    1993-08-01

    In this thesis a systematic study of the microstructure of YBa 2 Cu 3 O 7 thin films is presented by means of high-resolution electron microscopy (HREM). Most of the efforts are focused on the characterization of heterostructures of superconducting YBa 2 Cu 3 O 7 and non-superconducting PrBa 2 Cu 3 O 7 and on YBa 2 Cu 3 O 7 films deposited on step-edge substrates. These specially designed structures exhibit a great potential for the electronic application of high-Tc superconductors and for the investigation of the basic electric properties of the YBa 2 Cu 3 O 7 superconductor. (orig.) [de

  17. ZIF-8 derived hexagonal-like α-Fe2O3/ZnO/Au nanoplates with tunable surface heterostructures for superior ethanol gas-sensing performance

    Science.gov (United States)

    Chen, Ying; Li, Hui; Ma, Qian; Che, Quande; Wang, Junpeng; Wang, Gang; Yang, Ping

    2018-05-01

    A series of hexagonal-like α-Fe2O3/ZnO/Au nanoplate heterostructures with tunable morphologies and superior ethanol gas-sensing performance were successfully synthesized via the facile multi-step reaction processes. Hexagonal-like α-Fe2O3 nanoplates with uniform size around 150 nm are employed as new sensor substrates for loading the well-distributed ZnO and Au nanoparticles with adjustable size distribution on the different surfaces. Brunauer-EmmeQ-Teller (BET) surface areas of α-Fe2O3 and α-Fe2O3/ZnO samples are evaluated to be 37.94 and 61.27 m2/g, respectively, while α-Fe2O3/ZnO/Au composites present the highest value of 79.08 m2/g. These α-Fe2O3-based functional materials can exhibit outstanding sensing properties to ethanol. When the ethanol concentration is 100 ppm, the response value of α-Fe2O3/ZnO/Au composites can reach up to 170, which is 14.6 and 80.3 times higher than that of α-Fe2O3/ZnO and pure α-Fe2O3, respectively. The recycling stability and long-time effectiveness can be availably maintained within 30 days, as well as the response and recovery times are shortened to 4 and 5 s, respectively. Significantly, the response value of α-Fe2O3/ZnO/Au composite is still up to 63 at an operating temperature of 280 °C even though the ethanol concentration decreases to 10 ppm. The enhanced gas sensing mechanism would be focused on the synergistic effects of phase compositions, surface heterogeneous structures, large specific surface area, and the selective depositions of Au nanoparticles in α-Fe2O3/ZnO/Au sensors. The synergistic effect of different surface heterostructures referring to α-Fe2O3/Au and α-Fe2O3/ZnO/Au and their novel electron transport processes on the surfaces are first investigated and discussed in details. It is expected that hexagonal-like α-Fe2O3/ZnO/Au nanoplate heterostructures with excellent sensing performance can be the promising highly-sensitive materials in the actual application for monitoring and detecting ethanol.

  18. Tuning the electronic properties and Schottky barrier height of the vertical graphene/MoS2 heterostructure by an electric gating

    Science.gov (United States)

    Nguyen, Chuong V.

    2018-04-01

    In this paper, the electronic properties and Schottky contact in graphene/MoS2 (G/MoS2) heterostructure under an applied electric field are investigated by means of the density functional theory. It can be seen that the electronic properties of the G/MoS2 heterostructure are preserved upon contacting owing to the weak van der Waals interaction. We found that the n-type Schottky contact is formed in the G/MoS2 heterostructure with the Schottky barrier height of 0.49 eV. Furthermore, both Schottky contact and Schottky barrier height in the G/MoS2 heterostructure could be controlled by the applied electric field. If a positive electric field of 4 V/nm is applied to the system, a transformation from the n-type Schottky contact to the p-type one was observed, whereas the system keeps an n-type Schottky contact when a negative electric field is applied. Our results may provide helpful information to design, fabricate, and understand the physics mechanism in the graphene-based two-dimensional van der Waals heterostructures like as G/MoS2 heterostructure.

  19. Transmission electron microscopy of GaN based, doped semiconductor heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Pretorius, A.

    2006-07-01

    This thesis addresses the analysis of GaN based heterostructures with transmission electron microscopy (TEM). Basic properties of the material of interest are introduced in chapter 2. These include the structural and optical properties as well as an introduction to the growth methods used for the samples analysed in this work. In chapter 3 a brief theoretical treatment of TEM is given. As one main topic of this work is the determination of the In concentration in InGaN islands using strain state analysis, a detailed description of the method is given. Chapter 4 describes the results obtained for pyramidal defects present in metalorganic vapour phase epitaxy grown GaN:Mg with high dopant concentration. Based on the experimental results and the well established knowledge that GaN of inverted polarity is present inside the pyramidal defects, a variety of basal plane inversion domain boundary models was set up. From these models, HRTEM images were simulated using the multislice approach, followed by a quantitative comparison to experimentally obtained HRTEM images. Another focus of this work is the analysis of In{sub x}Ga{sub 1-x}N islands grown on GaN presented in chapter 5. Following a literature survey which describes different methods used to obtain In{sub x}Ga{sub 1-x}N islands, the first topic is the distinction of In{sub x}Ga{sub 1-x}N islands and metal droplets, which can form during growth. This is followed by the experimental results of molecular beam epitaxy and metalorganic vapour phase epitaxy grown In{sub x}Ga{sub 1-x}N island and quantum dot samples. (orig.)

  20. Electronic properties and morphology of copper oxide/n-type silicon heterostructures

    Science.gov (United States)

    Lindberg, P. F.; Gorantla, S. M.; Gunnæs, A. E.; Svensson, B. G.; Monakhov, E. V.

    2017-08-01

    Silicon-based tandem heterojunction solar cells utilizing cuprous oxide (Cu2O) as the top absorber layer show promise for high-efficiency conversion and low production cost. In the present study, single phase Cu2O films have been realized on n-type Si substrates by reactive magnetron sputtering at 400 °C. The obtained Cu2O/Si heterostructures have subsequently been heat treated at temperatures in the 400-700 °C range in Ar flow and extensively characterized by x-ray diffraction (XRD) measurements, transmission electron microscopy (TEM) imaging and electrical techniques. The Cu2O/Si heterojunction exhibits a current rectification of ~5 orders of magnitude between forward and reverse bias voltages. High resolution cross-sectional TEM-images show the presence of a ~2 nm thick interfacial SiO2 layer between Cu2O and the Si substrate. Heat treatments below 550 °C result in gradual improvement of crystallinity, indicated by XRD. At and above 550 °C, partial phase transition to cupric oxide (CuO) occurs followed by a complete transition at 700 °C. No increase or decrease of the SiO2 layer is observed after the heat treatment at 550 °C. Finally, a thin Cu-silicide layer (Cu3Si) emerges below the SiO2 layer upon annealing at 550 °C. This silicide layer influences the lateral current and voltage distributions, as evidenced by an increasing effective area of the heterojunction diodes.

  1. The effects of Dresselhaus and Rashba spin-orbit interactions on the electron tunneling in a non-magnetic heterostructure

    International Nuclear Information System (INIS)

    Lu Jianduo; Li Jianwen

    2010-01-01

    We theoretically investigate the electron transport properties in a non-magnetic heterostructure with both Dresselhaus and Rashba spin-orbit interactions. The detailed-numerical results show that (1) the large spin polarization can be achieved due to Dresselhaus and Rashba spin-orbit couplings induced splitting of the resonant level, although the magnetic field is zero in such a structure, (2) the Rashba spin-orbit coupling plays a greater role on the spin polarization than the Dresselhaus spin-orbit interaction does, and (3) the transmission probability and the spin polarization both periodically change with the increase of the well width.

  2. Polarization and charge-transfer effect on the transport properties in two-dimensional electron gases/LaNiO3 heterostructure

    Science.gov (United States)

    Chen, M. J.; Ning, X. K.; Wang, Z. J.; Liu, P.; Wang, S. F.; Wang, J. L.; Fu, G. S.; Ma, S.; Liu, W.; Zhang, Z. D.

    2018-01-01

    The film thickness dependent transport properties of the LaNiO3 (LNO) layer epitaxially grown on LaAlO3/SrTiO3 (LAO) 2-dimensional electronic gas (2DEG) have been investigated. The ultrathin LNO films grown on the 2DEG have a sheet resistance below the values of h/e2 in all temperature ranges. The electron density is enhanced by more than one order of magnitude by capping LNO films. X-ray photoelectron spectroscopy shows that the interface undergoes unambiguous charge transfer and electronic reconstruction, leading to modulation doping of such atomically engineered complex oxide heterointerfaces. The polar-catastrophe of the 2DEG is directly linked to the electronic structure and transport properties of the LNO. The transport properties can be well modulated by the thickness of the LAO in the 2DEG, and the data can be well fitted with the polar-catastrophe scenario. These results suggest a general approach to tunable functional films in oxide heterostructures with the 2DEG.

  3. Heterostructures and quantum devices

    CERN Document Server

    Einspruch, Norman G

    1994-01-01

    Heterostructure and quantum-mechanical devices promise significant improvement in the performance of electronic and optoelectronic integrated circuits (ICs). Though these devices are the subject of a vigorous research effort, the current literature is often either highly technical or narrowly focused. This book presents heterostructure and quantum devices to the nonspecialist, especially electrical engineers working with high-performance semiconductor devices. It focuses on a broad base of technical applications using semiconductor physics theory to develop the next generation of electrical en

  4. The effect of disorder on the electronic and magnetic properties of Mn2CoAl/GaAs heterostructures

    International Nuclear Information System (INIS)

    Feng, Yu; Tian, Chun-lin; Yuan, Hong-kuan; Kuang, An-long; Chen, Hong

    2015-01-01

    We study the effect of disorder, including swap and antisite, on the electronic and magnetic properties of heterostructures by using extensive first-principles calculations within density functional theory. Thirteen kinds of swap disorders and sixteen kinds of antisite disorders are proposed and studied comprehensively. Our calculation reveals that disorders at the interface have low formation energies, indicating that disorders are most likely to appear at the interface instead of the deep layer. Among all kinds of disorders, Mn 1 (Al) (where the interface Mn is occupied by an Al atom) and Mn 1 (As) (where the interface Mn is occupied by an As atom from a GaAs slab) antisite disorders possess the lowest formation energies. This shows that the interface Mn has a higher probability of being replaced by an Al atom, and that an As atom from a GaAs slab easily diffuses into a Mn 2 CoAl slab and occupies the position of the interface Mn. Moreover, further study on the interface electronic structure reveals that interface spin polarization suffers dramatic reduction due to Mn 1 (Al) and Mn 1 (As) antisite disorders. It can be deduced that the interface state, together with Mn 1 (Al) and Mn 1 (As) antisite disorders, may be the main causes of the low TMR ratio of Mn 2 CoAl/GaAs heterostructures. (paper)

  5. Analysis of current instabilities of thin AlN/GaN/AlN double heterostructure high electron mobility transistors

    International Nuclear Information System (INIS)

    Zervos, Ch; Adikimenakis, A; Bairamis, A; Kostopoulos, A; Kayambaki, M; Tsagaraki, K; Konstantinidis, G; Georgakilas, A

    2016-01-01

    The current instabilities of high electron mobility transistors (HEMTs), based on thin double AlN/GaN/AlN heterostructures (∼0.5 μm total thickness), directly grown on sapphire substrates, have been analyzed and compared for different AlN top barrier thicknesses. The structures were capped by 1 nm GaN and non-passivated 1 μm gate-length devices were processed. Pulsed I–V measurements resulted in a maximum cold pulsed saturation current of 1.4 A mm −1 at a gate-source voltage of +3 V for 3.7 nm AlN thickness. The measured gate and drain lag for 500 ns pulse-width varied between 6%–12% and 10%–18%, respectively. Furthermore, a small increase in the threshold voltage was observed for all the devices, possibly due to the trapping of electrons under the gate contact. The off-state breakdown voltage of V br  = 70 V, for gate-drain spacing of 2 μm, was approximately double the value measured for a single AlN/GaN HEMT structure grown on a thick GaN buffer layer. The results suggest that the double AlN/GaN/AlN heterostructures may offer intrinsic advantages for the breakdown and current stability characteristics of high current HEMTs. (paper)

  6. Luminance mechanisms in green organic light-emitting devices fabricated utilizing tris(8-hydroxyquinoline)aluminum/4,7-diphenyl-1, 10-phenanthroline multiple heterostructures acting as an electron transport layer.

    Science.gov (United States)

    Choo, Dong Chul; Seo, Su Yul; Kim, Tae Whan; Jin, You Young; Seo, Ji Hyun; Kim, Young Kwan

    2010-05-01

    The electrical and the optical properties in green organic light-emitting devices (OLEDs) fabricated utilizing tris(8-hydroxyquinoline)aluminum (Alq3)/4,7-diphenyl-1,10-phenanthroline (BPhen) multiple heterostructures acting as an electron transport layer (ETL) were investigated. The operating voltage of the OLEDs with a multiple heterostructure ETL increased with increasing the number of the Alq3/BPhen heterostructures because more electrons were accumulated at the Alq3/BPhen heterointerfaces. The number of the leakage holes existing in the multiple heterostructure ETL of the OLEDs at a low voltage range slightly increased due to an increase of the internal electric field generated from the accumulated electrons at the Alq3/BPhen heterointerface. The luminance efficiency of the OLEDs with a multiple heterostructure ETL at a high voltage range became stabilized because the increase of the number of the heterointerface decreased the quantity of electrons accumulated at each heterointerface.

  7. Electron spectrometer for gas-phase spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Bozek, J.D.; Schlachter, A.S. [Ernest Orlando Lawrence Berkeley National Lab., CA (United States)

    1997-04-01

    An electron spectrometer for high-resolution spectroscopy of gaseous samples using synchrotron radiation has been designed and constructed. The spectrometer consists of a gas cell, cylindrical electrostatic lens, spherical-sector electron energy analyzer, position-sensitive detector and associated power supplies, electronics and vacuum pumps. Details of the spectrometer design are presented together with some representative spectra.

  8. Coherent Electron Focussing in a Two-Dimensional Electron Gas.

    NARCIS (Netherlands)

    Houten, H. van; Wees, B.J. van; Mooij, J.E.; Beenakker, C.W.J.; Williamson, J.G.; Foxon, C.T.

    1988-01-01

    The first experimental realization of ballistic point contacts in a two-dimensional electron gas for the study of transverse electron focussing by a magnetic field is reported. Multiple peaks associated with skipping orbits of electrons reflected specularly by the channel boundary are observed. At

  9. Effects of SiNx on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Fan, Ren; Zhi-Biao, Hao; Lei, Wang; Lai, Wang; Hong-Tao, Li; Yi, Luo

    2010-01-01

    SiN x is commonly used as a passivation material for AlGaN/GaN high electron mobility transistors (HEMTs). In this paper, the effects of SiN x passivation film on both two-dimensional electron gas characteristics and current collapse of AlGaN/GaN HEMTs are investigated. The SiN x films are deposited by high- and low-frequency plasma-enhanced chemical vapour deposition, and they display different strains on the AlGaN/GaN heterostructure, which can explain the experiment results. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  10. Role of the electron blocking layer in the graded-index separate confinement heterostructure nitride laser diodes

    Science.gov (United States)

    Bojarska, Agata; Goss, Jakub; Stanczyk, Szymon; Makarowa, Irina; Schiavon, Dario; Czernecki, Robert; Suski, Tadeusz; Perlin, Piotr

    2018-04-01

    In this work, we investigate the role of the electron blocking layer (EBL) in laser diodes based on a graded index separate confinement heterostructure. We compare two sets of devices with very different EBL aluminum composition (3% and 12%) and design (graded and superlattice). The results of electro-optical characterization of these laser diodes reveal surprisingly modest role of electron blocking layer composition in determination of the threshold current and the differential efficiency values. However, EBL structure influences the operating voltage, which is decreased for devices with lower EBL and superlattice EBL. We observe also the differences in the thermal stability of devices - characteristic temperature is lower for lasers with 3% Al in EBL.

  11. The Non-Equilibrium Statistical Distribution Function for Electrons and Holes in Semiconductor Heterostructures in Steady-State Conditions

    Directory of Open Access Journals (Sweden)

    Krzysztof Jόzwikowska

    2015-06-01

    Full Text Available The main goal of this work is to determine a statistical non-equilibrium distribution function for the electron and holes in semiconductor heterostructures in steady-state conditions. Based on the postulates of local equilibrium, as well as on the integral form of the weighted Gyarmati’s variational principle in the force representation, using an alternative method, we have derived general expressions, which have the form of the Fermi–Dirac distribution function with four additional components. The physical interpretation of these components has been carried out in this paper. Some numerical results of a non-equilibrium distribution function for an electron in HgCdTe structures are also presented.

  12. Electron mobility and drift velocity in selectively doped InAlAs/InGaAs/InAlAs heterostructures

    International Nuclear Information System (INIS)

    Vasil’evskii, I. S.; Galiev, G. B.; Klimov, E. A.; Požela, K.; Požela, J.; Jucienė, V.; Sužiedėlis, A.; Žurauskienė, N.; Keršulis, S.; Stankevič, V.

    2011-01-01

    An increase in the electron mobility and drift velocity in high electric fields in quantum wells of selectively doped InAlAs/InGaAs/InAsAs heterostructures is obtained experimentally via controlling the composition of semiconductors forming the interface. The electron mobility at the interface in the In 0.8 Ga 0.2 As/In 0.7 Al 0.3 As metamorphic structure with a high molar fraction of In (0.7–0.8) is as high as 12.3 × 10 3 cm 2 V −1 s −1 at room temperature. An increase in the electron mobility by a factor of 1.1–1.4 is attained upon the introduction of thin (1–3 nm) InAs layers into a quantum well of selectively doped In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As heterostructures. A maximal drift velocity attains 2.5 × 10 7 cm/s in electric fields of 2–5 kV/cm. The threshold field F th for the intervalley Γ-L electron transfer (the Gunn effect) in the InGaAs quantum well is higher than in the bulk material by a factor of 2.5–3. The effect of two- to threefold decrease in the threshold field F th in the InGaAs quantum well is established upon increasing the molar fraction of In in the InAlAs barrier, as well as upon the introduction of thin InAs inserts into the InGaAs quantum well.

  13. Picosecond kinetics of the electron-hole layers formation in wide-bandgap II-VI type-II heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Filatov, E.V.; Zaitsev, S.V.; Tartakovskii, I.I.; Maksimov, A.A. [Institute of Solid State Physics, Russian Academy of Sciences, 142432 Chernogolovka, Moscow region (Russian Federation); Yakovlev, D.R. [A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Experimentelle Physik II, Technische Universitaet Dortmund (Germany); Waag, A. [Institute of Semiconductor Technology, Braunschweig Technical University, 38106 Braunschweig (Germany)

    2010-06-15

    Considerable slowdown of luminescence kinetics of the direct optical transition was discovered in ZnSe/BeTe type-II heterostructures under high levels of optical pumping. The effect is attributed to forming of a potential barrier for holes in the ZnSe layer due to band bending at high densities of spatially separated carriers. That results in a longer time of the photoexcited holes energy relaxation to their ground state in the BeTe layer. The decrease of overlapping of electron and hole wavefunctions in the ZnSe layer in thick ZnSe/BeTe structures at high levels of optical excitation reveals an additional important effect, that leads to sufficient retardation of radiative recombination time for photoexcited carriers (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Electron-lattice energy relaxation in laser-excited thin-film Au-insulator heterostructures studied by ultrafast MeV electron diffraction.

    Science.gov (United States)

    Sokolowski-Tinten, K; Shen, X; Zheng, Q; Chase, T; Coffee, R; Jerman, M; Li, R K; Ligges, M; Makasyuk, I; Mo, M; Reid, A H; Rethfeld, B; Vecchione, T; Weathersby, S P; Dürr, H A; Wang, X J

    2017-09-01

    We apply time-resolved MeV electron diffraction to study the electron-lattice energy relaxation in thin film Au-insulator heterostructures. Through precise measurements of the transient Debye-Waller-factor, the mean-square atomic displacement is directly determined, which allows to quantitatively follow the temporal evolution of the lattice temperature after short pulse laser excitation. Data obtained over an extended range of laser fluences reveal an increased relaxation rate when the film thickness is reduced or the Au-film is capped with an additional insulator top-layer. This behavior is attributed to a cross-interfacial coupling of excited electrons in the Au film to phonons in the adjacent insulator layer(s). Analysis of the data using the two-temperature-model taking explicitly into account the additional energy loss at the interface(s) allows to deduce the relative strength of the two relaxation channels.

  15. Electronic structure, lattice dynamics, and optical properties of a novel van der Waals semiconductor heterostructure: InGaSe2

    Science.gov (United States)

    Ibarra-Hernández, Wilfredo; Elsayed, Hannan; Romero, Aldo H.; Bautista-Hernández, Alejandro; Olguín, Daniel; Cantarero, Andrés

    2017-07-01

    There is a growing interest in the property dependence of transition metal dichalcogenides as a function of the number of layers and formation of heterostructures. Depending on the stacking, doping, edge effects, and interlayer distance, the properties can be modified, which opens the door to novel applications that require a detailed understanding of the atomic mechanisms responsible for those changes. In this work, we analyze the electronic properties and lattice dynamics of a heterostructure constructed by simultaneously stacking InSe layers and GaSe layers bounded by van der Waals forces. We have assumed the same space group of GaSe, P 6 ¯m 2 as it becomes the lower energy configuration for other considered stackings. The structural, vibrational, and optical properties of this layered compound have been calculated using density functional theory. The structure is shown to be energetically, thermally, and elastically stable, which indicates its possible chemical synthesis. A correlation of the theoretical physical properties with respect to its parent compounds is extensively discussed. One of the most interesting properties is the low thermal conductivity, which indicates its potential use in thermolectric applications. Additionally, we discuss the possibility of using electronic gap engineering methods, which can help us to tune the optical emission in a variable range close to that used in the field of biological systems (NIR). Finally, the importance of considering properly van der Waals dispersion in layered materials has been emphasized as included in the exchange correlation functional. As for the presence of atoms with important spin-orbit coupling, relativistic corrections have been included.

  16. Carbon doped GaAs/AlGaAs heterostructures with high mobility two dimensional hole gas

    Energy Technology Data Exchange (ETDEWEB)

    Hirmer, Marika; Bougeard, Dominique; Schuh, Dieter [Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg, D 93040 Regensburg (Germany); Wegscheider, Werner [Laboratorium fuer Festkoerperphysik, ETH Zuerich, 8093 Zuerich (Switzerland)

    2011-07-01

    Two dimensional hole gases (2DHG) with high carrier mobilities are required for both fundamental research and possible future ultrafast spintronic devices. Here, two different types of GaAs/AlGaAs heterostructures hosting a 2DHG were investigated. The first structure is a GaAs QW embedded in AlGaAs barrier grown by molecular beam epitaxy with carbon-doping only at one side of the quantum well (QW) (single side doped, ssd), while the second structure is similar but with symmetrically arranged doping layers on both sides of the QW (double side doped, dsd). The ssd-structure shows hole mobilities up to 1.2*10{sup 6} cm{sup 2}/Vs which are achieved after illumination. In contrast, the dsd-structure hosts a 2DHG with mobility up to 2.05*10{sup 6} cm{sup 2}/Vs. Here, carrier mobility and carrier density is not affected by illuminating the sample. Both samples showed distinct Shubnikov-de-Haas oscillations and fractional quantum-Hall-plateaus in magnetotransport experiments done at 20mK, indicating the high quality of the material. In addition, the influence of different temperature profiles during growth and the influence of the Al content of the barrier Al{sub x}Ga{sub 1-x}As on carrier concentration and mobility were investigated and are presented here.

  17. Correlations in the electron gas

    International Nuclear Information System (INIS)

    Dabrowski, B.M.

    1987-01-01

    A frequency- and wave-vector-dependent local-field factor (LFF) which enters expressions for the dielectric function and the spin-susceptibility response function of an electron liquid are studied. An exact expression, the in q → O limit for the symmetric and the antisymmetric LFF, are derived by the sue of equations of motion for the spin densities. The proof that these LFF satisfy compressibility and susceptibility sum rules is based on the novel virial theorems for the two-component system. The relation of exact LFF to earlier approximations and to other exactly derived LFF and to spin-density functional theory is examined. A simple parametrized form for the symmetric dynamical LFF is proposed. The parametrization is such that it satisfies both low- and high-frequency limits exactly. The relation of such LFF to time-dependent local-density approximation is examined. The dynamic structure factor, the plasmon damping, and the stopping power of a homogeneous electron liquid are calculated with use of a proposed complex dynamic LFF. A low-order calculation of the off-shell self-energy of an electron is performed and its effects are calculated both on the dynamic structure factor of an electron liquid and the quasi-particle properties

  18. Electron-beam-excited gas laser research

    International Nuclear Information System (INIS)

    Johnson, A.W.; Gerardo, J.B.; Patterson, E.L.; Gerber, R.A.; Rice, J.K.; Bingham, F.W.

    1975-01-01

    Net energy gain in laser fusion places requirements on the laser that are not realized by any existing laser. Utilization of relativistic electron beams (REB's), a relatively new source for the excitation of gas laser media, may lead to new lasers that could satisfy these requirements. Already REB's have been utilized to excite gas laser media and produce gas lasers that have not been produced as successfully any other way. Electron-beam-excitation has produced electronic-transition dimer lasers that have not yet been produced by any other excitation scheme (for example, Xe 2 / sup *(1)/, Kr:O(2 1 S)/sup 2/, KrF/sup *(3)/). In addition, REB's have initiated chemical reactions to produce HF laser radiation with unique and promising results. Relativistic-electron-beam gas-laser research is continuing to lead to new lasers with unique properties. Results of work carried out at Sandia Laboratories in this pioneering effort of electron-beam-excited-gas lasers are reviewed. (U.S.)

  19. Probing carrier dynamics of individual layers in a heterostructure using transient reflectivity

    Energy Technology Data Exchange (ETDEWEB)

    Khan, Salahuddin; Jayabalan, J., E-mail: jjaya@rrcat.gov.in; Singh, Asha; Yogi, Rachana; Chari, Rama [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

    2015-09-21

    We report the wavelength dependent transient reflectivity measurements in AlGaAs-GaAs heterostructures having two-dimensional electron (or hole) gas near the interface. Using a multilayer model for transient reflectivity, we show that the magnitude and sign of contributions from the carriers in two-dimensional electron (or hole) gas and GaAs to the total signal depends on the wavelength. Further, it has been shown that it is possible to study the carrier dynamics in a given layer of a heterostructure by performing transient reflectivity at specific wavelengths.

  20. Probing carrier dynamics of individual layers in a heterostructure using transient reflectivity

    International Nuclear Information System (INIS)

    Khan, Salahuddin; Jayabalan, J.; Singh, Asha; Yogi, Rachana; Chari, Rama

    2015-01-01

    We report the wavelength dependent transient reflectivity measurements in AlGaAs-GaAs heterostructures having two-dimensional electron (or hole) gas near the interface. Using a multilayer model for transient reflectivity, we show that the magnitude and sign of contributions from the carriers in two-dimensional electron (or hole) gas and GaAs to the total signal depends on the wavelength. Further, it has been shown that it is possible to study the carrier dynamics in a given layer of a heterostructure by performing transient reflectivity at specific wavelengths

  1. Magnetic properties of confined electron gas

    International Nuclear Information System (INIS)

    Felicio, J.R.D. de.

    1977-04-01

    The effects of confinement by a two or three-dimensional harmonic potential on the magnetic properties of a free electron gas are investigated using the grand-canonical ensemble framework. At high temperatures an extension of Darwin's, Felderhof and Raval's works is made taking into account spin effects at low temperature. A comprehensive description of the magnetic properties of a free electron gas is given. The system is regarded as finite, but the boundary condition psi=0 is not introduced. The limits of weak and strong confinement are also analysed [pt

  2. Monitoring non-pseudomorphic epitaxial growth of spinel/perovskite oxide heterostructures by reflection high-energy electron diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Schütz, P.; Pfaff, F.; Scheiderer, P.; Sing, M.; Claessen, R. [Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM), Universität Würzburg, Am Hubland, D-97074 Würzburg (Germany)

    2015-02-09

    Pulsed laser deposition of spinel γ-Al{sub 2}O{sub 3} thin films on bulk perovskite SrTiO{sub 3} is monitored by high-pressure reflection high-energy electron diffraction (RHEED). The heteroepitaxial combination of two materials with different crystal structures is found to be inherently accompanied by a strong intensity modulation of bulk diffraction patterns from inelastically scattered electrons, which impedes the observation of RHEED intensity oscillations. Avoiding such electron surface-wave resonance enhancement by de-tuning the RHEED geometry allows for the separate observation of the surface-diffracted specular RHEED signal and thus the real-time monitoring of sub-unit cell two-dimensional layer-by-layer growth. Since these challenges are essentially rooted in the difference between film and substrate crystal structure, our findings are of relevance for the growth of any heterostructure combining oxides with different crystal symmetry and may thus facilitate the search for novel oxide heterointerfaces.

  3. Model of two-dimensional electron gas formation at ferroelectric interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Aguado-Puente, P.; Bristowe, N. C.; Yin, B.; Shirasawa, R.; Ghosez, Philippe; Littlewood, P. B.; Artacho, Emilio

    2015-07-01

    The formation of a two-dimensional electron gas at oxide interfaces as a consequence of polar discontinuities has generated an enormous amount of activity due to the variety of interesting effects it gives rise to. Here, we study under what circumstances similar processes can also take place underneath ferroelectric thin films. We use a simple Landau model to demonstrate that in the absence of extrinsic screening mechanisms, a monodomain phase can be stabilized in ferroelectric films by means of an electronic reconstruction. Unlike in the LaAlO3/SrTiO3 heterostructure, the emergence with thickness of the free charge at the interface is discontinuous. This prediction is confirmed by performing first-principles simulations of free-standing slabs of PbTiO3. The model is also used to predict the response of the system to an applied electric field, demonstrating that the two-dimensional electron gas can be switched on and off discontinuously and in a nonvolatile fashion. Furthermore, the reversal of the polarization can be used to switch between a two-dimensional electron gas and a two-dimensional hole gas, which should, in principle, have very different transport properties. We discuss the possible formation of polarization domains and how such configuration competes with the spontaneous accumulation of free charge at the interfaces.

  4. Electron beam flue gas treatment process. Review

    International Nuclear Information System (INIS)

    Honkonen, V.A.

    1996-01-01

    The basis of the process for electron beam flue gas treatment are presented in the report. In tabular form the history of the research is reviewed. Main dependences of SO 2 and NO x removal efficiencies on different physico-chemical parameters are discussed. Trends concerning industrial process implementation are presented in the paper,finally. (author). 74 refs, 11 figs, 1 tab

  5. Low-voltage organic electronics based on a gate-tunable injection barrier in vertical graphene-organic semiconductor heterostructures.

    Science.gov (United States)

    Hlaing, Htay; Kim, Chang-Hyun; Carta, Fabio; Nam, Chang-Yong; Barton, Rob A; Petrone, Nicholas; Hone, James; Kymissis, Ioannis

    2015-01-14

    The vertical integration of graphene with inorganic semiconductors, oxide semiconductors, and newly emerging layered materials has recently been demonstrated as a promising route toward novel electronic and optoelectronic devices. Here, we report organic thin film transistors based on vertical heterojunctions of graphene and organic semiconductors. In these thin heterostructure devices, current modulation is accomplished by tuning of the injection barriers at the semiconductor/graphene interface with the application of a gate voltage. N-channel devices fabricated with a thin layer of C60 show a room temperature on/off ratio >10(4) and current density of up to 44 mAcm(-2). Because of the ultrashort channel intrinsic to the vertical structure, the device is fully operational at a driving voltage of 200 mV. A complementary p-channel device is also investigated, and a logic inverter based on two complementary transistors is demonstrated. The vertical integration of graphene with organic semiconductors via simple, scalable, and low-temperature fabrication processes opens up new opportunities to realize flexible, transparent organic electronic, and optoelectronic devices.

  6. Fabrication and measurement of gas electron multiplier

    International Nuclear Information System (INIS)

    Zhang Minglong; Xia Yiben; Wang Linjun; Gu Beibei; Wang Lin; Yang Ying

    2005-01-01

    Gas electron multiplier (GEM) with special performance has been widely used in the field of radiation detectors. In this work, GEM film was fabricated using a 50 μm -thick kapton film by the therma evaporation and laser masking drilling technique. GEM film has many uniformly arrayed holes with a diameter of 100 μm and a gap of 223 μm. It was then set up to a gas-flowing detector with an effective area of 3 x 3 cm 2 , 5.9 keV X-ray generated from a 55 Fe source was used to measure the pulse height distribution of GEM operating at various high voltage and gas proportion. The effect of high potential and gas proportion on the count rate and the energy resolution was discussed in detail. The results indicate that GEM has a very high ratio of signal to noise and better energy resolution of 18.2%. (authors)

  7. The Interplay of Rashba Spin-Orbit Interaction and Landau Level Broadening on a Two-Dimensional Electron Gas Under a Tilted Magnetic Field

    International Nuclear Information System (INIS)

    Gammag, Rayda; Villagonzalo, Cristine

    2012-01-01

    A two-dimensional electron gas in a tilted magnetic field with Rashba spin-orbit interaction (RSOI) was studied. The RSOI is accredited to the asymmetry of the heterostructure where the two-dimensional electron gas is found. The effects of the disorder-attributed Landau level broadening and the RSOI on the spin splitting were identified by simulating the density of states which was assumed to take a Gaussian shape. Increased Landau level broadening obscures the spin splitting and increases the overlap between spin states resulting to stout Gaussian peaks. On the other hand, stronger RSOI amplifies the splitting and lessens the overlap between spin states of the Landau levels. The splitting, however, results to stouter peaks. The similarity in the RSOI and Landau level broadening effects can be explained by recognizing that the asymmetry of the heterostructure is in itself a form of structural disorder.

  8. Exhaust gas treatment by electron beam irradiation

    International Nuclear Information System (INIS)

    Shibamura, Yokichi; Suda, Shoichi; Kobayashi, Toshiki

    1991-01-01

    Among global environmental problems, atmospheric pollution has been discussed since relatively old days, and various countermeasures have been taken, but recently in connection with acid rain, the efficient and economical treatment technology is demanded. As the denitration and desulfurization technology for the exhaust gas from the combustion of fossil fuel, the incineration of city trash and internal combustion engines, three is the treatment method by electron beam irradiation. By irradiating electron beam to exhaust gas, nitrogen oxides and sulfur oxides are oxidized to nitric acid and sulfuric acid, and by promoting the neutralization of these acids with injected alkali, harmless salts are recovered. This method has the merit that nitrogen oxides and surfur oxides can be removed efficiently with a single system. In this report, as for the exhaust gas treatment by electron beam irradiation, its principle, features, and the present status of research and development are described, and in particular, the research on the recent exhaust gas treatment in city trash incineration is introduced. This treatment method is a dry process, accordingly, waste water disposal is unnecessary. The reaction products are utilized as fertilizer, and waste is not produced. (K.I.)

  9. Performance of gas electron multiplier (GEM) detector

    International Nuclear Information System (INIS)

    Han, S. H.; Moon, B. S.; Kim, Y. K.; Chung, C. E.; Kang, H. D.; Cho, H. S.

    2002-01-01

    We have investigated in detail the operating properties of Gas Electron Multiplier (GEM) detectors with a double conical and a cylindrical structure in a wide range of external fields and GEM voltages. With the double conical GEM, the gain gradually increased with time by 10%; whereas this surface charging was eliminated with the cylindrical GEM. Effective gains above 1000 were easily observed over a wide range of collection field strengths in a gas mixture of Ar/CO 2 (70/30). The transparency and electron collection efficiency were found to depend on the ratio of external field and the applied GEM voltage; the mutual influence of both drift and collection fields was found to be trivial

  10. Electron-beam-induced reactivation of Si dopants in hydrogenated two-dimensional AlGaAs heterostructures: a possible new route for III-V nanostructure fabrication

    International Nuclear Information System (INIS)

    Kurowski, Ludovic; Bernard, Dorothee; Constant, Eugene; Decoster, Didier

    2004-01-01

    Hydrogen incorporation in n-type Si-doped GaAs epilayers is a well-known process which leads to the neutralization of the active Si impurities with the formation of SiH complexes. Recently, we have shown that SiH complex dissociation and, consequently, Si-dopant reactivation could occur when the epilayers are exposed to an electron beam. Two epilayers have been studied: the first is a 0.35 μm thick hydrogenated Si-doped GaAs epilayer and the second is Si planar-doped AlGaAs/GaAs/InGaAs heterostructures. Firstly, Hall effect measurements have been carried out on the epilayers exposed, after RF hydrogen plasma exposition, to increasing electron doses with different injection energies. For the 2D heterostructures, we have observed that the free carrier density N s does not vary significantly for weak electron densities. This reactivation presents a threshold value, contrary to the 0.35 μm epilayer in which N s varies quite linearly. It will be shown that such phenomena might be attributed to the filling of surface states as the dopants are progressively reactivated. Then, using a high spatial resolution electron beam lithography system, nanometric conductive patterns have been fabricated starting from hydrogenated epilayers. Electric measurements have been performed and the results obtained show that about 15 nm spatial resolution could be expected. In conclusion, taking into account this spatial resolution, the high spatial contrast of conductivity which could be expected due to the existence of an electron dose threshold, and the high mobility of the AlGaAs/GaAs/InGaAs heterostructure, the effects described in this paper could open a new way for the fabrication of III-V 1D or 2D mesoscopic structures for electronic or optoelectronic applications

  11. Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures.

    Science.gov (United States)

    Pateras, Anastasios; Park, Joonkyu; Ahn, Youngjun; Tilka, Jack A; Holt, Martin V; Reichl, Christian; Wegscheider, Werner; Baart, Timothy A; Dehollain, Juan Pablo; Mukhopadhyay, Uditendu; Vandersypen, Lieven M K; Evans, Paul G

    2018-05-09

    Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The electrostatic definition of quantum dots in semiconductor heterostructure devices intrinsically involves the lithographic fabrication of intricate patterns of metallic electrodes. The formation of metal/semiconductor interfaces, growth processes associated with polycrystalline metallic layers, and differential thermal expansion produce elastic distortion in the active areas of quantum devices. Understanding and controlling these distortions present a significant challenge in quantum device development. We report synchrotron X-ray nanodiffraction measurements combined with dynamical X-ray diffraction modeling that reveal lattice tilts with a depth-averaged value up to 0.04° and strain on the order of 10 -4 in the two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. Elastic distortions in GaAs/AlGaAs heterostructures modify the potential energy landscape in the 2DEG due to the generation of a deformation potential and an electric field through the piezoelectric effect. The stress induced by metal electrodes directly impacts the ability to control the positions of the potential minima where quantum dots form and the coupling between neighboring quantum dots.

  12. Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Naresh-Kumar, G., E-mail: naresh.gunasekar@strath.ac.uk; Trager-Cowan, C. [Dept of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom); Vilalta-Clemente, A.; Morales, M.; Ruterana, P. [CIMAP UMR 6252 CNRS-ENSICAEN-CEA-UCBN 14050 Caen Cedex (France); Pandey, S.; Cavallini, A.; Cavalcoli, D. [Dipartimento di Fisica Astronomia, Università di Bologna, 40127 Bologna (Italy); Skuridina, D.; Vogt, P.; Kneissl, M. [Institute of Solid State Physics, Technical University Berlin, 10623 Berlin (Germany); Behmenburg, H.; Giesen, C.; Heuken, M. [AIXTRON SE, Kaiserstr. 98, 52134 Herzogenrath (Germany); Gamarra, P.; Di Forte-Poisson, M. A. [Thales Research and Technology, III-V Lab, 91460 Marcoussis (France); Patriarche, G. [LPN, Route de Nozay, 91460 Marcoussis (France); Vickridge, I. [Institut des NanoSciences, Université Pierre et Marie Curie, 75015 Paris (France)

    2014-12-15

    We report on our multi–pronged approach to understand the structural and electrical properties of an InAl(Ga)N(33nm barrier)/Al(Ga)N(1nm interlayer)/GaN(3μm)/ AlN(100nm)/Al{sub 2}O{sub 3} high electron mobility transistor (HEMT) heterostructure grown by metal organic vapor phase epitaxy (MOVPE). In particular we reveal and discuss the role of unintentional Ga incorporation in the barrier and also in the interlayer. The observation of unintentional Ga incorporation by using energy dispersive X–ray spectroscopy analysis in a scanning transmission electron microscope is supported with results obtained for samples with a range of AlN interlayer thicknesses grown under both the showerhead as well as the horizontal type MOVPE reactors. Poisson–Schrödinger simulations show that for high Ga incorporation in the Al(Ga)N interlayer, an additional triangular well with very small depth may be exhibited in parallel to the main 2–DEG channel. The presence of this additional channel may cause parasitic conduction and severe issues in device characteristics and processing. Producing a HEMT structure with InAlGaN as the barrier and AlGaN as the interlayer with appropriate alloy composition may be a possible route to optimization, as it might be difficult to avoid Ga incorporation while continuously depositing the layers using the MOVPE growth method. Our present work shows the necessity of a multicharacterization approach to correlate structural and electrical properties to understand device structures and their performance.

  13. Multicharacterization approach for studying InAl(GaN/Al(GaN/GaN heterostructures for high electron mobility transistors

    Directory of Open Access Journals (Sweden)

    G. Naresh-Kumar

    2014-12-01

    Full Text Available We report on our multi–pronged approach to understand the structural and electrical properties of an InAl(GaN(33nm barrier/Al(GaN(1nm interlayer/GaN(3μm/ AlN(100nm/Al2O3 high electron mobility transistor (HEMT heterostructure grown by metal organic vapor phase epitaxy (MOVPE. In particular we reveal and discuss the role of unintentional Ga incorporation in the barrier and also in the interlayer. The observation of unintentional Ga incorporation by using energy dispersive X–ray spectroscopy analysis in a scanning transmission electron microscope is supported with results obtained for samples with a range of AlN interlayer thicknesses grown under both the showerhead as well as the horizontal type MOVPE reactors. Poisson–Schrödinger simulations show that for high Ga incorporation in the Al(GaN interlayer, an additional triangular well with very small depth may be exhibited in parallel to the main 2–DEG channel. The presence of this additional channel may cause parasitic conduction and severe issues in device characteristics and processing. Producing a HEMT structure with InAlGaN as the barrier and AlGaN as the interlayer with appropriate alloy composition may be a possible route to optimization, as it might be difficult to avoid Ga incorporation while continuously depositing the layers using the MOVPE growth method. Our present work shows the necessity of a multicharacterization approach to correlate structural and electrical properties to understand device structures and their performance.

  14. Tuning the conductivity threshold and carrier density of two-dimensional electron gas at oxide interfaces through interface engineering

    Directory of Open Access Journals (Sweden)

    H. J. Harsan Ma

    2015-08-01

    Full Text Available The two-dimensional electron gas (2DEG formed at the perovskite oxides heterostructures is of great interest because of its potential applications in oxides electronics and nanoscale multifunctional devices. A canonical example is the 2DEG at the interface between a polar oxide LaAlO3 (LAO and non-polar SrTiO3 (STO. Here, the LAO polar oxide can be regarded as the modulating or doping layer and is expected to define the electronic properties of 2DEG at the LAO/STO interface. However, to practically implement the 2DEG in electronics and device design, desired properties such as tunable 2D carrier density are necessary. Here, we report the tuning of conductivity threshold, carrier density and electronic properties of 2DEG in LAO/STO heterostructures by insertion of a La0.5Sr0.5TiO3 (LSTO layer of varying thicknesses, and thus modulating the amount of polarization of the oxide over layers. Our experimental result shows an enhancement of carrier density up to a value of about five times higher than that observed at the LAO/STO interface. A complete thickness dependent metal-insulator phase diagram is obtained by varying the thickness of LAO and LSTO providing an estimate for the critical thickness needed for the metallic phase. The observations are discussed in terms of electronic reconstruction induced by polar oxides.

  15. Electron-beam flue gas treatment

    International Nuclear Information System (INIS)

    Aoki, Shinji

    1990-01-01

    A new flue gas treatment process (EBA process) using an electron beam will be discussed. This EBA process is attracting worldwide attention as a new effective measure for solving acid rain problems and jointly developed by Ebara Corporation and the Japan Atomic Energy Research Institute. This process has many advantages: a) a dry process capable of removing high level SO x and NO x simultaneously, b) a process simple and easy to operate, c) production of agricultural fertilizers as salable by-products, and d) minimal installation space. Test results from the demonstration plant (max. gas flow rate of 24,000 m 3 N/h) which was erected in a coal-fired power station in Indianapolis, Indiana, U.S.A. will be presented. (author)

  16. Rough surface mitigates electron and gas emission

    International Nuclear Information System (INIS)

    Molvik, A.

    2004-01-01

    Heavy-ion beams impinging on surfaces near grazing incidence (to simulate the loss of halo ions) generate copious amounts of electrons and gas that can degrade the beam. We measured emission coefficients of η e (le) 130 and η 0 ∼ 10 4 respectively, with 1 MeV K + incident on stainless steel. Electron emission scales as η e ∝ 1/cos(θ), where θ is the ion angle of incidence relative to normal. If we were to roughen a surface by blasting it with glass beads, then ions that were near grazing incidence (90 o ) on smooth surface would strike the rims of the micro-craters at angles closer to normal incidence. This should reduce the electron emission: the factor of 10 reduction, Fig. 1(a), implies an average angle of incidence of 62 o . Gas desorption varies more slowly with θ (Fig. 1(b)) decreasing a factor of ∼2, and along with the electron emission is independent of the angle of incidence on a rough surface. In a quadrupole magnet, electrons emitted by lost primary ions are trapped near the wall by the magnetic field, but grazing incidence ions can backscatter and strike the wall a second time at an azimuth where magnetic field lines intercept the beam. Then, electrons can exist throughout the beam (see the simulations of Cohen, HIF News 1-2/04). The SRIM (TRIM) Monte Carlo code predicts that 60-70% of 1 MeV K + ions backscatter when incident at 88-89 o from normal on a smooth surface. The scattered ions are mostly within ∼10 o of the initial direction but a few scatter by up to 90 o . Ion scattering decreases rapidly away from grazing incidence, Fig. 1(c ). At 62 deg. the predicted ion backscattering (from a rough surface) is 3%, down a factor of 20 from the peak, which should significantly reduce electrons in the beam from lost halo ions. These results are published in Phys. Rev. ST - Accelerators and Beams

  17. Tuning electronic transport in epitaxial graphene-based van der Waals heterostructures

    Science.gov (United States)

    Lin, Yu-Chuan; Li, Jun; de La Barrera, Sergio C.; Eichfeld, Sarah M.; Nie, Yifan; Addou, Rafik; Mende, Patrick C.; Wallace, Robert M.; Cho, Kyeongjae; Feenstra, Randall M.; Robinson, Joshua A.

    2016-04-01

    Two-dimensional tungsten diselenide (WSe2) has been used as a component in atomically thin photovoltaic devices, field effect transistors, and tunneling diodes in tandem with graphene. In some applications it is necessary to achieve efficient charge transport across the interface of layered WSe2-graphene, a semiconductor to semimetal junction with a van der Waals (vdW) gap. In such cases, band alignment engineering is required to ensure a low-resistance, ohmic contact. In this work, we investigate the impact of graphene electronic properties on the transport at the WSe2-graphene interface. Electrical transport measurements reveal a lower resistance between WSe2 and fully hydrogenated epitaxial graphene (EGFH) compared to WSe2 grown on partially hydrogenated epitaxial graphene (EGPH). Using low-energy electron microscopy and reflectivity on these samples, we extract the work function difference between the WSe2 and graphene and employ a charge transfer model to determine the WSe2 carrier density in both cases. The results indicate that WSe2-EGFH displays ohmic behavior at small biases due to a large hole density in the WSe2, whereas WSe2-EGPH forms a Schottky barrier junction.Two-dimensional tungsten diselenide (WSe2) has been used as a component in atomically thin photovoltaic devices, field effect transistors, and tunneling diodes in tandem with graphene. In some applications it is necessary to achieve efficient charge transport across the interface of layered WSe2-graphene, a semiconductor to semimetal junction with a van der Waals (vdW) gap. In such cases, band alignment engineering is required to ensure a low-resistance, ohmic contact. In this work, we investigate the impact of graphene electronic properties on the transport at the WSe2-graphene interface. Electrical transport measurements reveal a lower resistance between WSe2 and fully hydrogenated epitaxial graphene (EGFH) compared to WSe2 grown on partially hydrogenated epitaxial graphene (EGPH). Using low

  18. Two-dimensional electron and hole gases in GaN/AlGaN heterostructures; Zweidimensionale Elektronen- und Loechergase in GaN/AlGaN-Heterostrukturen

    Energy Technology Data Exchange (ETDEWEB)

    Link, A.

    2004-12-01

    The aim of this PhD thesis is to investigate the electronic properties of electron and hole gases in GaN/AlGaN heterostructures. Particularly, a deeper and broadened understanding of scattering mechanisms and transport properties is in the focus of this work. The main experimental techniques used for this purpose are the study of Shubnikov-de Haas (SdH) effect and Hall measurements at low temperatures. By means of these magnetotransport measurements, a series of GaN/AlGaN heterostructures with different Al content of the AlGaN barrier were investigated. Since the sheet carrier density of the 2DEG in these semiconductor structures is strongly dependent on the Al content (n{sub s}=2 x 10{sup 12}-10{sup 13} cm{sup -2}), the variation of transport parameters was determined as a function of sheet carrier concentration. First, from the temperature dependence of the SdH oscillations the effective transport mass was calculated. A Hall bar structure with an additional gate contact was used as an alternative to tune the carrier density of a 2DEG system independent of varying structural parametes such as Al content. Thus, the scattering mechanisms were investigated in the carrier density region between 3 x 10{sup 12} and 9.5 x 10{sup 12} cm{sup -2}. The transport properties of subband electrons were studied for a 2DEG system with two occupied subbands. (orig.)

  19. Lateral topological crystalline insulator heterostructure

    Science.gov (United States)

    Sun, Qilong; Dai, Ying; Niu, Chengwang; Ma, Yandong; Wei, Wei; Yu, Lin; Huang, Baibiao

    2017-06-01

    The emergence of lateral heterostructures fabricated by two-dimensional building blocks brings many exciting realms in material science and device physics. Enriching available nanomaterials for creating such heterostructures and enabling the underlying new physics is highly coveted for the integration of next-generation devices. Here, we report a breakthrough in lateral heterostructure based on the monolayer square transition-metal dichalcogenides MX2 (M  =  W, X  =  S/Se) modules. Our results reveal that the MX2 lateral heterostructure (1S-MX2 LHS) can possess excellent thermal and dynamical stability. Remarkably, the highly desired two-dimensional topological crystalline insulator phase is confirmed by the calculated mirror Chern number {{n}\\text{M}}=-1 . A nontrivial band gap of 65 meV is obtained with SOC, indicating the potential for room-temperature observation and applications. The topologically protected edge states emerge at the edges of two different nanoribbons between the bulk band gap, which is consistent with the mirror Chern number. In addition, a strain-induced topological phase transition in 1S-MX2 LHS is also revealed, endowing the potential utilities in electronics and spintronics. Our predictions not only introduce new member and vitality into the studies of lateral heterostructures, but also highlight the promise of lateral heterostructure as appealing topological crystalline insulator platforms with excellent stability for future devices.

  20. Ballistic-electron-emission spectroscopy of AlxGa1-xAs/GaAs heterostructures: Conduction-band offsets, transport mechanisms, and band-structure effects

    International Nuclear Information System (INIS)

    OShea, J.J.; Brazel, E.G.; Rubin, M.E.; Bhargava, S.; Chin, M.A.; Narayanamurti, V.

    1997-01-01

    We report an extensive investigation of semiconductor band-structure effects in single-barrier Al x Ga 1-x As/GaAs heterostructures using ballistic-electron-emission spectroscopy (BEES). The transport mechanisms in these single-barrier structures were studied systematically as a function of temperature and Al composition over the full compositional range (0≤x≤1). The initial (Γ) BEES thresholds for Al x Ga 1-x As single barriers with 0≤x≤0.42 were extracted using a model which includes the complete transmission probability of the metal-semiconductor interface and the semiconductor heterostructure. Band offsets measured by BEES are in good agreement with previous measurements by other techniques which demonstrates the accuracy of this technique. BEES measurements at 77 K give the same band-offset values as at room temperature. When a reverse bias is applied to the heterostructures, the BEES thresholds shift to lower voltages in good agreement with the expected bias-induced band-bending. In the indirect band-gap regime (x>0.45), spectra show a weak ballistic-electron-emission microscopy current contribution due to intervalley scattering through Al x Ga 1-x As X valley states. Low-temperature spectra show a marked reduction in this intervalley current component, indicating that intervalley phonon scattering at the GaAs/Al x Ga 1-x As interface produces a significant fraction of thisX valley current. A comparison of the BEES thresholds with the expected composition dependence of the Al x Ga 1-x As Γ, L, and X points yields good agreement over the entire composition range. copyright 1997 The American Physical Society

  1. Electron beam application in gas waste treatment in China

    International Nuclear Information System (INIS)

    Wu Haifeng

    2003-01-01

    In the most recent decade, electron beam waste treatment technology attracted serious attention from environment policymaker and industrial leaders in power industry in China. Starting in middle of 1980's, Chinese research institute began experiment of electron beam treatment on flue gas. By the end of 2000, two 10,000 cubic meters per hour small scale electron beam gas purifying station were established in Sichuang province and Beijing. Several electron beam gas purifying demonstration projects are under construction. With robust economy and strong energy demand, needless to say, in near future, electron beam gas purifying technology will have a bright prospect in China. (author)

  2. Anomalous low-temperature Coulomb drag in graphene-GaAs heterostructures.

    Science.gov (United States)

    Gamucci, A; Spirito, D; Carrega, M; Karmakar, B; Lombardo, A; Bruna, M; Pfeiffer, L N; West, K W; Ferrari, A C; Polini, M; Pellegrini, V

    2014-12-19

    Vertical heterostructures combining different layered materials offer novel opportunities for applications and fundamental studies. Here we report a new class of heterostructures comprising a single-layer (or bilayer) graphene in close proximity to a quantum well created in GaAs and supporting a high-mobility two-dimensional electron gas. In our devices, graphene is naturally hole-doped, thereby allowing for the investigation of electron-hole interactions. We focus on the Coulomb drag transport measurements, which are sensitive to many-body effects, and find that the Coulomb drag resistivity significantly increases for temperatures law, therefore displaying a notable departure from the ordinary quadratic temperature dependence expected in a weakly correlated Fermi-liquid. This anomalous behaviour is consistent with the onset of strong interlayer correlations. Our heterostructures represent a new platform for the creation of coherent circuits and topologically protected quantum bits.

  3. Ballistic Electron Emission Microscopy/Spectroscopy on Au/Titanylphthalocyanine/GaAs Heterostructures

    International Nuclear Information System (INIS)

    Oezcan, S; Roch, T; Strasser, G; Smoliner, J; Franke, R; Fritz, T

    2007-01-01

    In this article Au/titanylphthalocyanine/GaAs diodes incorporating ultra smooth thin films of the archetypal organic semiconductor titanylphthalocyanine (TiOPc) were investigated by Ballistic Electron Emission Microscopy/Spectroscopy (BEEM/S). Analyzing the BEEM spectra, we find that the TiOPc increases the BEEM threshold voltage compared to reference Au/GaAs diodes. From BEEM images taken we conclude that our molecular beam epitaxial (MBE) grown samples show very homogeneous transmission, compare to wet chemically manufactured organic films. The barrier height measured on the Au- TiOPc-GaAs is V b ∼ 1.2eV, which is in good agreement with the data found in [T. Nishi, K. Tanai, Y. Cuchi, M. R. Willis, and K. Seki Chem. Phys. Lett., vol. 414, pp. 479-482, 2005.]. The results indicate that TiOPc functions as a p-type semiconductor, which is plausible since the measurements were carried out in air [K. Walzer, T. Toccoli, A. Pallaori, R. Verucchi, T. Fritz, K. Leo, A. Boschetti, and S. Iannotte Surf. Scie., vol. 573, pp. 346-358, 2004

  4. Charge transfer in gas electron multipliers

    Energy Technology Data Exchange (ETDEWEB)

    Ottnad, Jonathan; Ball, Markus; Ketzer, Bernhard; Ratza, Viktor; Razzaghi, Cina [HISKP, Bonn University, Nussallee 14-16, D-53115 Bonn (Germany)

    2015-07-01

    In order to efficiently employ a Time Projection Chamber (TPC) at interaction rates higher than ∝1 kHz, as foreseen e.g. in the ALICE experiment (CERN) and at CB-ELSA (Bonn), a continuous operation and readout mode is required. A necessary prerequisite is to minimize the space charge coming from the amplification system and to maintain an excellent spatial and energy resolution. Unfortunately these two goals can be in conflict to each other. Gas Electron Multipliers (GEM) are one candidate to fulfill these requirements. It is necessary to understand the processes within the amplification structure to find optimal operation conditions. To do so, we measure the charge transfer processes in and between GEM foils with different geometries and field configurations, and use an analytical model to describe the results. This model can then be used to predict and optimize the performance. The talk gives the present status of the measurements and describes the model.

  5. Electron energy transfer effect in Au NS/CH3NH3PbI3-xClx heterostructures via localized surface plasmon resonance coupling.

    Science.gov (United States)

    Cai, Chunfeng; Zhai, Jizhi; Bi, Gang; Wu, Huizhen

    2016-09-15

    Localized surface plasmon resonance coupling effects (LSPR) have attracted much attention due to their interesting properties. This Letter demonstrates significant photoluminescence (PL) enhancement in the Au NS/CH3NH3PbI3-xClx heterostructures via the LSPR coupling. The observed PL emission enhancement is mainly attributed to the hot electron energy transfer effect related to the LSPR coupling. For the energy transfer effect, photo-generated electrons will be directly extracted into Au SPs, rather than relaxed into exciton states. This energy transfer process is much faster than the diffusion and relaxation time of free electrons, and may provide new ideas on the design of high-efficiency solar cells and ultrafast response photodetectors.

  6. AlN/GaN heterostructures for normally-off transistors

    Energy Technology Data Exchange (ETDEWEB)

    Zhuravlev, K. S., E-mail: zhur@isp.nsc.ru; Malin, T. V.; Mansurov, V. G.; Tereshenko, O. E. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Abgaryan, K. K.; Reviznikov, D. L. [Dorodnicyn Computing Centre of the Russian Academy of Sciences (Russian Federation); Zemlyakov, V. E.; Egorkin, V. I. [National Research University of Electronic Technology (MIET) (Russian Federation); Parnes, Ya. M.; Tikhomirov, V. G. [Joint Stock Company “Svetlana-Electronpribor” (Russian Federation); Prosvirin, I. P. [Russian Academy of Sciences, Boreskov Institute of Catalysis, Siberian Branch (Russian Federation)

    2017-03-15

    The structure of AlN/GaN heterostructures with an ultrathin AlN barrier is calculated for normally-off transistors. The molecular-beam epitaxy technology of in situ passivated SiN/AlN/GaN heterostructures with a two-dimensional electron gas is developed. Normally-off transistors with a maximum current density of ~1 A/mm, a saturation voltage of 1 V, a transconductance of 350 mS/mm, and a breakdown voltage of more than 60 V are demonstrated. Gate lag and drain lag effects are almost lacking in these transistors.

  7. Influence of strain relaxation in axial {{In}}_{x}{{Ga}}_{1-x}{\\rm{N}}/{GaN} nanowire heterostructures on their electronic properties

    Science.gov (United States)

    Marquardt, Oliver; Krause, Thilo; Kaganer, Vladimir; Martín-Sánchez, Javier; Hanke, Michael; Brandt, Oliver

    2017-05-01

    We present a systematic theoretical study of the influence of elastic strain relaxation on the built-in electrostatic potentials and the electronic properties of axial {{In}}x{{Ga}}1-x{{N}}/{GaN} nanowire (NW) heterostructures. Our simulations reveal that for a sufficiently large ratio between the thickness of the {{In}}x{{Ga}}1-x{{N}} disk and the diameter of the NW, the elastic relaxation leads to a significant reduction of the built-in electrostatic potential in comparison to a planar system of similar layer thickness and In content. In this case, the ground state transition energies approach constant values with increasing thickness of the disk and only depend on the In content, a behavior usually associated to that of a quantum well free of built-in electrostatic potentials. We show that the structures under consideration are by no means field-free, and the built-in potentials continue to play an important role even for ultrathin NWs. In particular, strain and the resulting polarization potentials induce complex confinement features of electrons and holes, which depend on the In content, shape, and dimensions of the heterostructure.

  8. Effects Of Spontaneous And Piezoelectric Polarization On The Electronic Properties Of AlGaN/GaN Heterostructures

    International Nuclear Information System (INIS)

    Demir, M.

    2010-01-01

    Nitride containing semiconductors and their alloys are used to produce hetero structures where materials with different energy gaps are grown on top of each other so that quantum wells capable of holding free electrons in two dimensions are formed. The carriers in the wells are free to move along the hetero interface but their motion in the direction of growth is restricted. While the density of electron gas depends on the doping concentration and the dimensions of the hetero structure among others, another important parameter that determines the electron density is the spontaneous polarization in the material and piezoelectric polarization near the hetero interface. Polarization is so effective that in some cases it is possible to get electron concentrations as high as 10 1 2-10 1 3 cm - 2 even in the absence of any intentional doping. In this study the electronic properties of an AlGaN/GaN structure is investigated by solving the Poisson/Schroedinger equation self-consistently in the modulation doped hetero structure. The effect of spacer, doping concentration, dimensions of the structure and temperature and especially the spontaneous and piezoelectric polarizations on the electronic properties are investigated.

  9. Thermal stability and in situ SiN passivation of InAlN/GaN high electron mobility heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Lugani, L.; Carlin, J.-F.; Py, M. A.; Grandjean, N. [ICMP, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland)

    2014-09-15

    We investigate the thermal stability of nearly lattice-matched InAlN layers under metal organic vapor phase epitaxy conditions for temperatures >800 °C and show that they are not fully stable. In particular, InAlN top layers undergo degradation during high temperature annealing due to a surface related process, which causes the loss of crystal quality. This strongly impacts the transport properties of InAlN/GaN HEMT heterostructures; in particular, the mobility is significantly reduced. However, we demonstrate that high thermal stability can be achieved by capping with a GaN layer as thin as 0.5 nm. Those findings enabled us to realize in situ passivated HEMT heterostructures with state of the art transport properties.

  10. Growth of low disorder GaAs/AlGaAs heterostructures by molecular beam epitaxy for the study of correlated electron phases in two dimensions

    Science.gov (United States)

    Watson, John D.

    examining transport in a series of two-dimensional hole gases in which the dopant setback distance and the Al mole fraction in the barriers of the quantum well were varied. The hole density was tuned in this way from 0.18 -- 1.9 x 1011 cm-2. Surprisingly, the mobility at T = 0.3 K was found to peak at 2.3 x 10 6 cm-2 at an intermediate density of 6.5 x 10 10 cm-2. Self-consistent Schrodinger/Poisson calculations were performed for each wafer to examine the scattering rates due to a variety of potentials at low temperature. The drop in mobility at high density could be accounted for with the inclusion of interface roughness scattering, but using the same interface roughness scattering parameters for similar two-dimensional electron gases produced inconsistent results. This leaves open the possibility of contributions from other scattering mechanisms in the hole samples at high density. Chapter 6 presents an in-depth study of in-situ backgated two-dimensional gases used for studying the fragile fractional quantum Hall states in the 2nd Landau level. It was found that leakage currents as small as 4 pA could cause noticeable heating of the electron gas if the lattice was not properly thermally anchored to the cryostat. However, it was also found that when the heterostructure design and device fabrication recipe were properly optimized, gate voltages as large as 4 V could be applied before the leakage turned on, allowing the density to be tuned from full depletion to over 4 x 1011 cm-2. As a result, heating effects at dilution refrigerator temperatures were negligible and the gap at nu = 5/2 could be tuned continuously with density to a maximum value of 625 mK, the largest reported to date. An unusual evolution of the reentrant integer quantum Hall states as a function of density is also reported. Such devices should prove useful for the study of electron correlations in nanostructures in the 2nd Landau level.

  11. Thermal response in van der Waals heterostructures

    KAUST Repository

    Gandi, Appala; Alshareef, Husam N.; Schwingenschlö gl, Udo

    2016-01-01

    We solve numerically the Boltzmann transport equations of the phonons and electrons to understand the thermoelectric response in heterostructures of M2CO2 (M: Ti, Zr, Hf) MXenes with transition metal dichalcogenide monolayers. Low frequency optical

  12. GaN/NbN epitaxial semiconductor/superconductor heterostructures

    Science.gov (United States)

    Yan, Rusen; Khalsa, Guru; Vishwanath, Suresh; Han, Yimo; Wright, John; Rouvimov, Sergei; Katzer, D. Scott; Nepal, Neeraj; Downey, Brian P.; Muller, David A.; Xing, Huili G.; Meyer, David J.; Jena, Debdeep

    2018-03-01

    Epitaxy is a process by which a thin layer of one crystal is deposited in an ordered fashion onto a substrate crystal. The direct epitaxial growth of semiconductor heterostructures on top of crystalline superconductors has proved challenging. Here, however, we report the successful use of molecular beam epitaxy to grow and integrate niobium nitride (NbN)-based superconductors with the wide-bandgap family of semiconductors—silicon carbide, gallium nitride (GaN) and aluminium gallium nitride (AlGaN). We apply molecular beam epitaxy to grow an AlGaN/GaN quantum-well heterostructure directly on top of an ultrathin crystalline NbN superconductor. The resulting high-mobility, two-dimensional electron gas in the semiconductor exhibits quantum oscillations, and thus enables a semiconductor transistor—an electronic gain element—to be grown and fabricated directly on a crystalline superconductor. Using the epitaxial superconductor as the source load of the transistor, we observe in the transistor output characteristics a negative differential resistance—a feature often used in amplifiers and oscillators. Our demonstration of the direct epitaxial growth of high-quality semiconductor heterostructures and devices on crystalline nitride superconductors opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic and piezoelectric properties of the group III/nitride semiconductor family.

  13. Temperature Dependence of the Energy Band Diagram of AlGaN/GaN Heterostructure

    Directory of Open Access Journals (Sweden)

    Yanli Liu

    2018-01-01

    Full Text Available Temperature dependence of the energy band diagram of AlGaN/GaN heterostructure was investigated by theoretical calculation and experiment. Through solving Schrodinger and Poisson equations self-consistently by using the Silvaco Atlas software, the energy band diagram with varying temperature was calculated. The results indicate that the conduction band offset of AlGaN/GaN heterostructure decreases with increasing temperature in the range of 7 K to 200 K, which means that the depth of quantum well at AlGaN/GaN interface becomes shallower and the confinement of that on two-dimensional electron gas reduces. The theoretical calculation results are verified by the investigation of temperature dependent photoluminescence of AlGaN/GaN heterostructure. This work provides important theoretical and experimental basis for the performance degradation of AlGaN/GaN HEMT with increasing temperature.

  14. Escher-like quasiperiodic heterostructures

    International Nuclear Information System (INIS)

    Barriuso, A G; Monzon, J J; Sanchez-Soto, L L; Costa, A F

    2009-01-01

    Quasiperiodic heterostructures present unique structural, electronic and vibrational properties, connected to the existence of incommensurate periods. We go beyond previous schemes, such as Fibonacci or Thue-Morse, based on substitutional sequences, by introducing construction rules generated by tessellations of the unit disc by regular polygons. We explore some of the properties exhibited by these systems. (fast track communication)

  15. Escher-like quasiperiodic heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Barriuso, A G; Monzon, J J; Sanchez-Soto, L L [Departamento de Optica, Facultad de Fisica, Universidad Complutense, 28040 Madrid (Spain); Costa, A F [Departamento de Matematicas Fundamentales, Facultad de Ciencias, Universidad Nacional de Educacion a Distancia, Senda del Rey 9, 28040 Madrid (Spain)

    2009-05-15

    Quasiperiodic heterostructures present unique structural, electronic and vibrational properties, connected to the existence of incommensurate periods. We go beyond previous schemes, such as Fibonacci or Thue-Morse, based on substitutional sequences, by introducing construction rules generated by tessellations of the unit disc by regular polygons. We explore some of the properties exhibited by these systems. (fast track communication)

  16. X = S, Se, Te) heterostructures

    KAUST Repository

    Zhang, Qingyun; Schwingenschlö gl, Udo

    2018-01-01

    Using first-principles calculations, we investigate the electronic properties of the two-dimensional GaX/MX2 (M = Mo, W; X = S, Se, Te) heterostructures. Orbital hybridization between GaX and MX2 is found to result in Rashba splitting at the valence

  17. Heterostructures of transition metal dichalcogenides

    KAUST Repository

    Amin, Bin

    2015-08-24

    The structural, electronic, optical, and photocatalytic properties of out-of-plane and in-plane heterostructures of transition metal dichalcogenides are investigated by (hybrid) first principles calculations. The out-of-plane heterostructures are found to be indirect band gap semiconductors with type-II band alignment. Direct band gaps can be achieved by moderate tensile strain in specific cases. The excitonic peaks show blueshifts as compared to the parent monolayer systems, whereas redshifts occur when the chalcogen atoms are exchanged along the series S-Se-Te. Strong absorption from infrared to visible light as well as excellent photocatalytic properties can be achieved.

  18. Interfacial Interactions in Monolayer and Few-Layer SnS/CH3 NH3 PbI3 Perovskite van der Waals Heterostructures and Their Effects on Electronic and Optical Properties.

    Science.gov (United States)

    Li, Jian-Cai; Wei, Zeng-Xi; Huang, Wei-Qing; Ma, Li-Li; Hu, Wangyu; Peng, Ping; Huang, Gui-Fang

    2018-02-05

    A high light-absorption coefficient and long-range hot-carrier transport of hybrid organic-inorganic perovskites give huge potential to their composites in solar energy conversion and environmental protection. Understanding interfacial interactions and their effects are paramount for designing perovskite-based heterostructures with desirable properties. Herein, we systematically investigated the interfacial interactions in monolayer and few-layer SnS/CH 3 NH 3 PbI 3 heterostructures and their effects on the electronic and optical properties of these structures by density functional theory. It was found that the interfacial interactions in SnS/CH 3 NH 3 PbI 3 heterostructures were van der Waals (vdW) interactions, and they were found to be insensitive to the layer number of 2D SnS sheets. Interestingly, although their band gap decreased upon increasing the layer number of SnS, the near-gap electronic states and optical absorption spectra of these heterostructures were found to be strikingly similar. This feature was determined to be critical for the design of 2D layered SnS-based heterostructures. Strong absorption in the ultraviolet and visible-light regions, type II staggered band alignment at the interface, and few-layer SnS as an active co-catalyst make 2D SnS/CH 3 NH 3 PbI 3 heterostructures promising candidates for photocatalysis, photodetectors, and solar energy harvesting and conversion. These results provide first insight into the nature of interfacial interactions and are useful for designing hybrid organic-inorganic perovskite-based devices with novel properties. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Future applications of heterostructures

    Science.gov (United States)

    König, Ulf

    1996-01-01

    In this review the status and future of heterostructure devices is discussed. The author concentrates on III/V and Si/SiGe. Performance and applications are folded to the data and expectations of the micro- and opto-electronic market and to the traditional Si-mainstream. New trends, i.e. the SIA-roadmap, are checked how heterodevices can fit in. Only the most attractive candidates for applications are considered, i.e. the heterobipolar-, the hetero field effect-transistors, the resonant tunnel diode and to a less extent, some optoelectronic devices. Considered figures of merit are frequencies, transconductance, noise at high and low frequencies, threshold voltage, power delay, threshold current and quantum efficiencies. It is pointed out how to optimize those by material and design. Extrapolations to the future potential of heterodevices are made, just taking the claimed scaling of lateral dimensions into consideration. Field of applications are presented, where heterodevices offer exclusive qualities, i.e. high frequency transmission and sensors, and new mixed systems. In the case of logic the trend goes to nanoscaled devices and ICs targeting nanoelectronics beyond traditional electronics. Heterostructure layers allow a vertical nanoscaling and thus give an additional degree of freedom for designing and optimation. It is an attractive challenge for scientists and engineers to solve the related technological problems like thin, low thermal budget oxides, like defect free buffer layers etc. Special attention is put on Si/SiGe, which is now on an upswing in electronics and photonics.

  20. Observing Imperfection in Atomic Interfaces for van der Waals Heterostructures.

    Science.gov (United States)

    Rooney, Aidan P; Kozikov, Aleksey; Rudenko, Alexander N; Prestat, Eric; Hamer, Matthew J; Withers, Freddie; Cao, Yang; Novoselov, Kostya S; Katsnelson, Mikhail I; Gorbachev, Roman; Haigh, Sarah J

    2017-09-13

    Vertically stacked van der Waals heterostructures are a lucrative platform for exploring the rich electronic and optoelectronic phenomena in two-dimensional materials. Their performance will be strongly affected by impurities and defects at the interfaces. Here we present the first systematic study of interfaces in van der Waals heterostructure using cross-sectional scanning transmission electron microscope (STEM) imaging. By measuring interlayer separations and comparing these to density functional theory (DFT) calculations we find that pristine interfaces exist between hBN and MoS 2 or WS 2 for stacks prepared by mechanical exfoliation in air. However, for two technologically important transition metal dichalcogenide (TMDC) systems, MoSe 2 and WSe 2 , our measurement of interlayer separations provide the first evidence for impurity species being trapped at buried interfaces with hBN interfaces that are flat at the nanometer length scale. While decreasing the thickness of encapsulated WSe 2 from bulk to monolayer we see a systematic increase in the interlayer separation. We attribute these differences to the thinnest TMDC flakes being flexible and hence able to deform mechanically around a sparse population of protruding interfacial impurities. We show that the air sensitive two-dimensional (2D) crystal NbSe 2 can be fabricated into heterostructures with pristine interfaces by processing in an inert-gas environment. Finally we find that adopting glovebox transfer significantly improves the quality of interfaces for WSe 2 compared to processing in air.

  1. Quantum corrections to conductivity observed at intermediate magnetic fields in a high mobility GaAs/AlGaAs 2-dimensional electron gas

    International Nuclear Information System (INIS)

    Taboryski, R.; Veje, E.; Lindelof, P.E.

    1990-01-01

    Magnetoresistance with the field perpendicular to the 2-dimensional electron gas in a high mobility GaAs/AlGaAs heterostructure at low temperatures is studied. At the lowest magnetic field we observe the weak localization. At magnetic fields, where the product of the mobility and the magnetic field is of the order of unity, the quantum correction to conductivity due to the electron-electron interaction is as a source of magnetoresistance. A consistent analysis of experiments in this regime is for the first time performed. In addition to the well known electron-electron term with the expected temperature dependence, we find a new type of temperature independent quantum correction, which varies logarithmically with mobility. (orig.)

  2. High Thermoelectric Power Factor of High-Mobility 2D Electron Gas.

    Science.gov (United States)

    Ohta, Hiromichi; Kim, Sung Wng; Kaneki, Shota; Yamamoto, Atsushi; Hashizume, Tamotsu

    2018-01-01

    Thermoelectric conversion is an energy harvesting technology that directly converts waste heat from various sources into electricity by the Seebeck effect of thermoelectric materials with a large thermopower ( S ), high electrical conductivity (σ), and low thermal conductivity (κ). State-of-the-art nanostructuring techniques that significantly reduce κ have realized high-performance thermoelectric materials with a figure of merit ( ZT = S 2 ∙σ∙ T ∙κ -1 ) between 1.5 and 2. Although the power factor (PF = S 2 ∙σ) must also be enhanced to further improve ZT , the maximum PF remains near 1.5-4 mW m -1 K -2 due to the well-known trade-off relationship between S and σ. At a maximized PF, σ is much lower than the ideal value since impurity doping suppresses the carrier mobility. A metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) structure on an AlGaN/GaN heterostructure is prepared. Applying a gate electric field to the MOS-HEMT simultaneously modulates S and σ of the high-mobility electron gas from -490 µV K -1 and ≈10 -1 S cm -1 to -90 µV K -1 and ≈10 4 S cm -1 , while maintaining a high carrier mobility (≈1500 cm 2 V -1 s -1 ). The maximized PF of the high-mobility electron gas is ≈9 mW m -1 K -2 , which is a two- to sixfold increase compared to state-of-the-art practical thermoelectric materials.

  3. Compact electron accelerator for pumping gas lasers

    International Nuclear Information System (INIS)

    Duncan, C.V.; Bradley, L.P.

    1976-01-01

    A description is given of the design and application of a simple e-beam generator for the repetitive pulse pumping of gas lasers. The circuit uses a low inductance Marx and series tuned pulse forming elements

  4. Surface donor states distribution post SiN passivation of AlGaN/GaN heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Goyal, Nitin, E-mail: nitin@unik.no [Carinthian Tech Research CTR AG, Europastraße 4/1, Technologiepark Villach, A- 9524 Villach/St. Magdalen (Austria); Department of Electronics and Telecommunication, Norwegian University of Science and Technology, Trondheim NO7034 (Norway); Fjeldly, Tor A. [Department of Electronics and Telecommunication, Norwegian University of Science and Technology, Trondheim NO7034 (Norway)

    2014-07-21

    In this paper, we present a physics based analytical model to describe the effect of SiN passivation on two-dimensional electron gas density and surface barrier height in AlGaN/GaN heterostructures. The model is based on an extraction technique to calculate surface donor density and surface donor level at the SiN/AlGaN interface. The model is in good agreement with the experimental results and promises to become a useful tool in advanced design and characterization of GaN based heterostructures.

  5. Electromagnetic drift modes in an inhomogeneous electron gas

    DEFF Research Database (Denmark)

    Shukla, P. K.; Pecseli, H. L.; Juul Rasmussen, Jens

    1986-01-01

    A pair of nonlinear equations is derived which describes the dynamics of the electromagnetic drift oscillations in a nonuniform magnetized electron gas. It is shown that the nonlinear electromagnetic drift modes can propagate in the form of dipole vortices...

  6. Electron-beam pumping of visible and ultraviolet gas lasers

    International Nuclear Information System (INIS)

    Bradley, L.P.

    1975-01-01

    Several techniques for using direct electron-pumping of gas lasers are reviewed. The primary objective is to categorize pump geometries and to give guidelines for gun selection and pulser design. Examples and application of pump technology are given

  7. Electronic data interchange in the Canadian natural gas industry

    International Nuclear Information System (INIS)

    Sheinfield, J.

    1995-01-01

    The concept of electronic data interchange (EDI) in the gas industry was discussed. EDI as a champion of costumer service and as a powerful management tool was defined, and the process of electronic information transfer was explained. EDI was then placed in the context of the business process, and its benefits in providing efficient service and product improvement were enumerated. North American Gas EDI standards, and industry initiatives were explored in detail

  8. Wave mechanics applied to semiconductor heterostructures

    International Nuclear Information System (INIS)

    Bastard, G.

    1990-01-01

    This book examines the basic electronic and optical properties of two dimensional semiconductor heterostructures based on III-V and II-VI compounds. The book explores various consequences of one-dimensional size-quantization on the most basic physical properties of heterolayers. Beginning with basic quantum mechanical properties of idealized quantum wells and superlattices, the book discusses the occurrence of bound states when the heterostructure is imperfect or when it is shone with near bandgap light

  9. Pilot test of flue gas treatment by electron beam

    International Nuclear Information System (INIS)

    Tokunaga, Okihiro

    1995-01-01

    The development of the technology of the desulfurization and denitration for flue gas by using electron beam was started in Japan in 1970s, and since then, the development research for putting it to practical use and the basic research on the subjects which must be resolved for promoting the practical use have been advanced. Based on these results, the verifying test using a pilot scale plant was carried out from 1991 to 1994 for the treatment of coal-burning flue gas, municipal waste-burning flue gas and highway tunnel exhaust gas. The operation of the pilot plant was already finished, and the conceptual design of a practical scale plant based on the results and the assessment of the economical efficiency were performed. As for the coal-burning flue gas treatment by using electron beam, the basic test, the pilot test and the conceptual design of a practical scale plant and the assessment of the economical efficiency are reported. As for the municipal waste-burning flue gas treatment by using electron beam, the basic test and the pilot test are reported. Also the pilot test on the denitration of exhaust gas in highway tunnels in reported. In Poland, the pilot test on the treatment of flue gas in coal-burning thermal power stations is carried out. In Germany, the technical development for cleaning the air contaminated by volatile organic compounds by electron beam irradiation is advanced. (K.I.)

  10. The electrical conductivity of an interacting electron gas

    International Nuclear Information System (INIS)

    Kojima, D.Y.

    1977-01-01

    A manybody theory by the propagator method developed by Montroll and Ward for the equilibrium statistical mechanics, is reformulated to describe the electrical conductivity for an electron gas system containing impurity. The theory includes electron-impurity interaction to the infinite order and electron-electron interaction to the first order exchange effect. The propagator used by Montroll and Ward is separated into two propagators, each of which satisfies either Bloch or Schroedinger equation, to utilize the perturbation method. Correct counting of graphs are presented. Change in the relaxation time due to the electron-electron interaction is explicity shown and compared with recent works [pt

  11. Graphyne–graphene (nitride) heterostructure as nanocapacitor

    International Nuclear Information System (INIS)

    Bhattacharya, Barnali; Sarkar, Utpal

    2016-01-01

    Highlights: • Binding energy of heterostructures indicates the exothermic nature. • Increasing electric field enhances charge and energy stored in the system. • The external electric fields amplify the charge transfer between two flakes. • The capacitance value gets saturated above a certain electric field. - Abstract: A nanoscale capacitor composed of heterostructure derived from finite size graphyne flake and graphene (nitride) flake has been proposed and investigated using density functional theory (DFT). The exothermic nature of formation process of these heterostructures implies their stability. Significant charge transfer between two flakes generates permanent dipole in this heterostructures. The amount of charge transfer is tunable under the application of external electric field which enhances their applicability in electronics. We have specifically focused on the capacitive properties of different heterostructure composed of graphyne flake and graphene (nitride) flake, i.e., graphyne/graphene, graphyne/h-BN, graphyne/AlN, graphyne/GaN. The charge stored by each flake, energy storage, and capacitance are switchable under external electric field. Thus, our modeled heterostructures are a good candidate as nanoscale capacitor and can be used in nanocircuit. We found that the charge stored by each flake, energy storage, and capacitance value are highest for graphyne/GaN heterostructures.

  12. Graphyne–graphene (nitride) heterostructure as nanocapacitor

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharya, Barnali; Sarkar, Utpal, E-mail: utpalchemiitkgp@yahoo.com

    2016-10-20

    Highlights: • Binding energy of heterostructures indicates the exothermic nature. • Increasing electric field enhances charge and energy stored in the system. • The external electric fields amplify the charge transfer between two flakes. • The capacitance value gets saturated above a certain electric field. - Abstract: A nanoscale capacitor composed of heterostructure derived from finite size graphyne flake and graphene (nitride) flake has been proposed and investigated using density functional theory (DFT). The exothermic nature of formation process of these heterostructures implies their stability. Significant charge transfer between two flakes generates permanent dipole in this heterostructures. The amount of charge transfer is tunable under the application of external electric field which enhances their applicability in electronics. We have specifically focused on the capacitive properties of different heterostructure composed of graphyne flake and graphene (nitride) flake, i.e., graphyne/graphene, graphyne/h-BN, graphyne/AlN, graphyne/GaN. The charge stored by each flake, energy storage, and capacitance are switchable under external electric field. Thus, our modeled heterostructures are a good candidate as nanoscale capacitor and can be used in nanocircuit. We found that the charge stored by each flake, energy storage, and capacitance value are highest for graphyne/GaN heterostructures.

  13. Adiabatic Expansion of Electron Gas in a Magnetic Nozzle

    Science.gov (United States)

    Takahashi, Kazunori; Charles, Christine; Boswell, Rod; Ando, Akira

    2018-01-01

    A specially constructed experiment shows the near perfect adiabatic expansion of an ideal electron gas resulting in a polytropic index greater than 1.4, approaching the adiabatic value of 5 /3 , when removing electric fields from the system, while the polytropic index close to unity is observed when the electrons are trapped by the electric fields. The measurements were made on collisionless electrons in an argon plasma expanding in a magnetic nozzle. The collision lengths of all electron collision processes are greater than the scale length of the expansion, meaning the system cannot be in thermodynamic equilibrium, yet thermodynamic concepts can be used, with caution, in explaining the results. In particular, a Lorentz force, created by inhomogeneities in the radial plasma density, does work on the expanding magnetic field, reducing the internal energy of the electron gas that behaves as an adiabatically expanding ideal gas.

  14. Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthesized by topochemical method of atoms substitution

    DEFF Research Database (Denmark)

    Rozhavskaya, Mariia M.; Kukushkin, Sergey A.; Osipov, Andrey V.

    2017-01-01

    We report a novel approach for metal organic vapor phase epitaxy of (Al)GaN heterostructures on Si substrates. An approximately 90–100 nm thick SiC buffer layer is synthesized using the reaction between Si substrate and CO gas. Highresolution transmission electron microscopy reveals sharp...

  15. Electrical detection of spin transport in Si two-dimensional electron gas systems

    Science.gov (United States)

    Chang, Li-Te; Fischer, Inga Anita; Tang, Jianshi; Wang, Chiu-Yen; Yu, Guoqiang; Fan, Yabin; Murata, Koichi; Nie, Tianxiao; Oehme, Michael; Schulze, Jörg; Wang, Kang L.

    2016-09-01

    Spin transport in a semiconductor-based two-dimensional electron gas (2DEG) system has been attractive in spintronics for more than ten years. The inherent advantages of high-mobility channel and enhanced spin-orbital interaction promise a long spin diffusion length and efficient spin manipulation, which are essential for the application of spintronics devices. However, the difficulty of making high-quality ferromagnetic (FM) contacts to the buried 2DEG channel in the heterostructure systems limits the potential developments in functional devices. In this paper, we experimentally demonstrate electrical detection of spin transport in a high-mobility 2DEG system using FM Mn-germanosilicide (Mn(Si0.7Ge0.3)x) end contacts, which is the first report of spin injection and detection in a 2DEG confined in a Si/SiGe modulation doped quantum well structure (MODQW). The extracted spin diffusion length and lifetime are l sf = 4.5 μm and {τ }{{s}}=16 {{ns}} at 1.9 K respectively. Our results provide a promising approach for spin injection into 2DEG system in the Si-based MODQW, which may lead to innovative spintronic applications such as spin-based transistor, logic, and memory devices.

  16. High power electron accelerators for flue gas treatment

    International Nuclear Information System (INIS)

    Zimek, Z.

    2011-01-01

    Flue gas treatment process based on electron beam application for SO 2 and NO x removal was successfully demonstrated in number of laboratories, pilot plants and industrial demonstration facilities. The industrial scale application of an electron beam process for flue gas treatment requires accelerators modules with a beam power 100-500 kW and electron energy range 0.8-1.5 MeV. The most important accelerator parameters for successful flue gas radiation technology implementation are related to accelerator reliability/availability, electrical efficiency and accelerator price. Experience gained in high power accelerators exploitation in flue gas treatment industrial demonstration facility was described and high power accelerator constructions have been reviewed. (author)

  17. High power electron accelerators for flue gas treatment

    Energy Technology Data Exchange (ETDEWEB)

    Zimek, Z. [Institute of Nuclear Chemistry and Technology, Warsaw (Poland)

    2011-07-01

    Flue gas treatment process based on electron beam application for SO{sub 2} and NO{sub x} removal was successfully demonstrated in number of laboratories, pilot plants and industrial demonstration facilities. The industrial scale application of an electron beam process for flue gas treatment requires accelerators modules with a beam power 100-500 kW and electron energy range 0.8-1.5 MeV. The most important accelerator parameters for successful flue gas radiation technology implementation are related to accelerator reliability/availability, electrical efficiency and accelerator price. Experience gained in high power accelerators exploitation in flue gas treatment industrial demonstration facility was described and high power accelerator constructions have been reviewed. (author)

  18. Dosimetry for combustion flue gas treatment with electron beam

    Energy Technology Data Exchange (ETDEWEB)

    Mehta, K.; Bułka, S.; Sun, Y. [Institute of Nuclear Chemistry and Technology, Warsaw (Poland)

    2011-07-01

    The electron beam treatment of flue gas is one of the new technologies. There are several reasons for carrying out dosimetry at various phases of the project as understanding the process and optimizing the equipment, for process control and for troubleshooting in case of malfunction etc. The main challenge in measuring dose for flue gas applications is that the medium being irradiated is gaseous. Two general approaches for dose measurements are: adding/placing some dosimeters in the reaction vessel (gas) and using the components of the gas itself as a dosimeter. Various techniques and methods have been tried which are discussed in this paper. (author)

  19. Observation of the transition from diffusive regime to ballistic regime of the 2DEG transport property in Al xGa1-xN/GaN heterostructures

    International Nuclear Information System (INIS)

    Han, K.; Shen, B.; Tang, N.; Tang, Y.Q.; He, X.W.; Qin, Z.X.; Yang, Z.J.; Zhang, G.Y.; Lin, T.; Zhu, B.; Zhou, W.Z.; Chu, J.H.

    2007-01-01

    Electron-electron interaction effect of the two-dimensional electron gas (2DEG) in Al x Ga 1-x N/GaN heterostructures has been investigated by means of magnetotransport measurements at low temperatures. From the temperature dependence of the longitudinal conductivity of the heterostructures, a clear transition region has been observed. Based on the theoretical analysis, we conclude that this region corresponds to the transition from the diffusive regime to the ballistic regime of the 2DEG transport property. The interaction constant is determined to be -0.423, which is consistent with the theoretical prediction. However, the critical temperature for the transition, which is 8 K in Al x Ga 1-x N/GaN heterostructures, is much higher than the theoretical prediction

  20. Electron-beam flue-gas treatment system

    International Nuclear Information System (INIS)

    Aoki, Sinji; Suzuki, Ryoji

    1994-01-01

    The damage of forests in the world due to acid rain has become serious problems, and the development of high efficiency and economical desulfurization and denitration technologies for combustion exhaust gas has been desired. Japan leads the world in exhaust gas treatment technology. The conventional technologies have been the desulfurization by lime gypsum process and the denitration by ammonia catalytic reduction process. The solution by entirely new concept is the electron beam treatment technology for exhaust gas. This technology is a dry process without drain, and does not require catalyst. The byproduct from this technology was approved as a fertilizer. The electron beam treatment technology is called EBA (electron beam with ammonia). The exhaust gas treatment technology by electron beam process is constituted by the cooling of exhaust gas, ammonia addition, electron beam irradiation and the separation of byproduct. The features of the technology are the simultaneous removal of sulfur and nitrogen oxides, dry process, the facilities are simple and the operation is easy, easy following to load variation and the utilization of byproduct. The reaction mechanism of desulfurization and denitration, the course of development, the electron beam generator, and the verifying test are reported. (K.I.)

  1. P-type SnO thin films and SnO/ZnO heterostructures for all-oxide electronic and optoelectronic device applications

    Energy Technology Data Exchange (ETDEWEB)

    Saji, Kachirayil J. [Nanostructured Materials Research Laboratory, Department of Materials Science & Engineering, University of Utah, Salt Lake City, UT 84112 (United States); Department of Physics, Govt. Victoria College, University of Calicut, Palakkad 678 001 (India); Venkata Subbaiah, Y.P. [Nanostructured Materials Research Laboratory, Department of Materials Science & Engineering, University of Utah, Salt Lake City, UT 84112 (United States); Department of Physics, Yogi Vemana University, Kadapa, Andhra Pradesh 516003 (India); Tian, Kun [Nanostructured Materials Research Laboratory, Department of Materials Science & Engineering, University of Utah, Salt Lake City, UT 84112 (United States); Tiwari, Ashutosh, E-mail: tiwari@eng.utah.edu [Nanostructured Materials Research Laboratory, Department of Materials Science & Engineering, University of Utah, Salt Lake City, UT 84112 (United States)

    2016-04-30

    Tin monoxide (SnO) is considered as one of the most important p-type oxides available to date. Thin films of SnO have been reported to possess both an indirect bandgap (~ 0.7 eV) and a direct bandgap (~ 2.8 eV) with quite high hole mobility (~ 7 cm{sup 2}/Vs) values. Moreover, the hole density in these films can be tuned from 10{sup 15}–10{sup 19} cm{sup −3} just by controlling the thin film deposition parameters. Because of the above attributes, SnO thin films offer great potential for fabricating modern electronic and optoelectronic devices. In this article, we are reviewing the most recent developments in this field and also presenting some of our own results on SnO thin films grown by pulsed laser deposition technique. We have also proposed a p–n heterostructure comprising of p-type SnO and n-type ZnO which can pave way for realizing next-generation, all-oxide transparent electronic devices. - Highlights: • We reviewed recent developments on p-type SnO thin film research. • Discussed the optical and electrical properties of SnO thin films • Bipolar conduction in SnO is discussed. • Optoelectronic properties of SnO–ZnO composite system are discussed. • Proposed SnO–ZnO heterojunction band structure.

  2. Oxygen vacancy induced two-dimensional electron system in disordered-crystalline LaAlO{sub 3}/KTaO{sub 3} heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Zapf, Michael; Gabel, Judith; Scheiderer, Philipp; Dudy, Lenart; Sing, Michael; Claessen, Ralph [Physikalisches Institut and Roentgen Center for Complex Material Systems (RCCM), Universitaet Wuerzburg (Germany); Schlueter, Christoph; Lee, Tien-Lin [Diamond Light Source Ltd., Didcot (United Kingdom)

    2016-07-01

    Two-dimensional electron systems (2DESs) in oxide heterostructures based on SrTiO{sub 3} are considered to be a promising platform for future microelectronic technology. A variety of interesting properties such as ferromagnetism, resistive switching and superconductivity are linked to interfacial n-doping involving oxygen vacancies. The introduction of a high Z-cation with large spin-orbit coupling like Ta offers an exciting new parameter. We report on a new oxygen vacancy induced 2DES located at the interface of disordered LaAlO{sub 3} and crystalline KTaO{sub 3}, which exhibits remarkably high electron mobilities and charge carrier concentrations. The number of charge carriers can be readily manipulated by the film thickness and irradiation with intense X-rays. Our synchrotron-based hard X-ray photoemission experiments provide a direct probe of the Ta 5d charge carriers at the buried interface to obtain information on the charge carrier density, its depth distribution, and the band structure.

  3. Impurity-induced states in superconducting heterostructures

    Science.gov (United States)

    Liu, Dong E.; Rossi, Enrico; Lutchyn, Roman M.

    2018-04-01

    Heterostructures allow the realization of electronic states that are difficult to obtain in isolated uniform systems. Exemplary is the case of quasi-one-dimensional heterostructures formed by a superconductor and a semiconductor with spin-orbit coupling in which Majorana zero-energy modes can be realized. We study the effect of a single impurity on the energy spectrum of superconducting heterostructures. We find that the coupling between the superconductor and the semiconductor can strongly affect the impurity-induced states and may induce additional subgap bound states that are not present in isolated uniform superconductors. For the case of quasi-one-dimensional superconductor/semiconductor heterostructures we obtain the conditions for which the low-energy impurity-induced bound states appear.

  4. Optical and electronic properties of AlGaN/GaN heterostructures; Optische und elektronische Eigenschaften von AlGaN/GaN-Heterostrukturen

    Energy Technology Data Exchange (ETDEWEB)

    Winzer, Andreas T.

    2008-10-28

    The electronic material properties of AlGaN/GaN heterostructures were investigated. The analysis of optical spectra by complex models allowed for the first time to confirm the theoretically predicted dependence of the polarisation discontinuity (also called polarisation charge) on the Al content by reliable experiments. Furthermore, it is shown that the polarisation discontinuity is constant over the temperature range from 5 K up to room temperature. The method employed here is based on the analysis of electroreflectance (ER) spectra and exploits the specific dependence of the electric field strength within a layer on the applied electric voltage. In this work this method is consequently refined to surpass all alternative methods in accuracy. ER spectra of group-III-nitrides posses some general peculiarities: (i) In di- rect proximity to the band gap they can not be described by constant Seraphin coefficients in contrast to small gap semiconductors (e.g. GaAs). (ii) Though, the analysis of the Franz-Keldysh oscillations by Aspnes' method yields the correct values of the electric field strength as it is the case for small gap semiconductors. Optical and especially ER spectra of group-III-nitrides can only be described completely by taking into account for excitons in electric fields. For this a mo- del proposed by Blossey was applied to nitride semiconductors and implemented into a software program. By extensive numerical simulations it was found that the energetic position of the exciton main resonance as well as its spectral width depend linearly on the electric field strength. The approach presented is unique since it allows for a quantitative description of excitons in inhomogeneous electric fields. The good agreement between experiment and simulation supports the reliability of the material properties presented in this work. The operation of AlGaN/GaN heterostructures as chemical sensors was investigated by means of optical spectra too. If Pt contacted

  5. Electron transfer in gas surface collisions

    International Nuclear Information System (INIS)

    Wunnik, J.N.M. van.

    1983-01-01

    In this thesis electron transfer between atoms and metal surfaces in general is discussed and the negative ionization of hydrogen by scattering protons at a cesiated crystalline tungsten (110) surface in particular. Experimental results and a novel theoretical analysis are presented. In Chapter I a theoretical overview of resonant electron transitions between atoms and metals is given. In the first part of chapter II atom-metal electron transitions at a fixed atom-metal distance are described on the basis of a model developed by Gadzuk. In the second part the influence of the motion of the atom on the atomic charge state is incorporated. Measurements presented in chapter III show a strong dependence of the fraction of negatively charged H atoms scattered at cesiated tungsten, on the normal as well as the parallel velocity component. In chapter IV the proposed mechanism for the parallel velocity effect is incorporated in the amplitude method. The scattering process of protons incident under grazing angles on a cesium covered surface is studied in chapter V. (Auth.)

  6. Nb and Ta layer doping effects on the interfacial energetics and electronic properties of LaAlO3/SrTiO3 heterostructure: first-principles analysis.

    Science.gov (United States)

    Nazir, Safdar; Behtash, Maziar; Cheng, Jianli; Luo, Jian; Yang, Kesong

    2016-01-28

    The two-dimensional electron gas (2DEG) formed at the n-type (LaO)(+1)/(TiO2)(0) interface in the polar/nonpolar LaAlO3/SrTiO3 (LAO/STO) heterostructure (HS) has emerged as a prominent research area because of its great potential for nanoelectronic applications. Due to its practical implementation in devices, desired physical properties such as high charge carrier density and mobility are vital. In this respect, 4d and 5d transition metal doping near the interfacial region is expected to tailor electronic properties of the LAO/STO HS system effectively. Herein, we studied Nb and Ta-doping effects on the energetics, electronic structure, interfacial charge carrier density, magnetic moment, and the charge confinements of the 2DEG at the n-type (LaO)(+1)/(TiO2)(0) interface of LAO/STO HS using first-principles density functional theory calculations. We found that the substitutional doping of Nb(Ta) at Ti [Nb(Ta)@Ti] and Al [Nb(Ta)@Al] sites is energetically more favorable than that at La [Nb(Ta)@La] and Sr [Nb(Ta)@Sr] sites, and under appropriate thermodynamic conditions, the changes in the interfacial energy of HS systems upon Nb(Ta)@Ti and Nb(Ta)@Al doping are negative, implying that the formation of these structures is energetically favored. Our calculations also showed that Nb(Ta)@Ti and Nb(Ta)@Al doping significantly improve the interfacial charge carrier density with respect to that of the undoped system, which is because the Nb(Ta) dopant introduces excess free electrons into the system, and these free electrons reside mainly on the Nb(Ta) ions and interfacial Ti ions. Hence, along with the Ti 3d orbitals, the Nb 4d and Ta 5d orbitals also contribute to the interfacial metallic states; accordingly, the magnetic moments on the interfacial Ti ions increase significantly. As expected, the Nb@Al and Ta@Al doped LAO/STO HS systems show higher interfacial charge carrier density than the undoped and other doped systems. In contrast, Nb@Ti and Ta@Ti doped systems may

  7. Electron energy distribution function control in gas discharge plasmas

    International Nuclear Information System (INIS)

    Godyak, V. A.

    2013-01-01

    The formation of the electron energy distribution function (EEDF) and electron temperature in low temperature gas discharge plasmas is analyzed in frames of local and non-local electron kinetics. It is shown, that contrary to the local case, typical for plasma in uniform electric field, there is the possibility for EEDF modification, at the condition of non-local electron kinetics in strongly non-uniform electric fields. Such conditions “naturally” occur in some self-organized steady state dc and rf discharge plasmas, and they suggest the variety of artificial methods for EEDF modification. EEDF modification and electron temperature control in non-equilibrium conditions occurring naturally and those stimulated by different kinds of plasma disturbances are illustrated with numerous experiments. The necessary conditions for EEDF modification in gas discharge plasmas are formulated

  8. New approach to local anodic oxidation of semiconductor heterostructures

    International Nuclear Information System (INIS)

    Martaus, Jozef; Gregusova, Dagmar; Cambel, Vladimir; Kudela, Robert; Soltys, Jan

    2008-01-01

    We have experimentally explored a new approach to local anodic oxidation (LAO) of a semiconductor heterostructures by means of atomic force microscopy (AFM). We have applied LAO to an InGaP/AlGaAs/GaAs heterostructure. Although LAO is usually applied to oxidize GaAs/AlGaAs/GaAs-based heterostructures, the use of the InGaP/AlGaAs/GaAs system is more advantageous. The difference lies in the use of different cap layer materials: Unlike GaAs, InGaP acts like a barrier material with respect to the underlying AlGaAs layer and has almost one order of magnitude lower density of surface states than GaAs. Consequently, the InGaP/AlGaAs/GaAs heterostructure had the remote Si-δ doping layer only 6.5 nm beneath the surface and the two-dimensional electron gas (2DEG) was confined only 23.5 nm beneath the surface. Moreover, InGaP unaffected by LAO is a very durable material in various etchants and allows us to repeatedly remove thin portions of the underlying AlGaAs layer via wet etching. This approach influences LAO technology fundamentally: LAO was used only to oxidize InGaP cap layer to define very narrow (∼50 nm) patterns. Subsequent wet etching was used to form very narrow and high-energy barriers in the 2DEG patterns. This new approach is promising for the development of future nano-devices operated both at low and high temperatures

  9. Bandgap engineering and charge separation in two-dimensional GaS-based van der Waals heterostructures for photocatalytic water splitting

    Science.gov (United States)

    Wang, Biao; Kuang, Anlong; Luo, Xukai; Wang, Guangzhao; Yuan, Hongkuan; Chen, Hong

    2018-05-01

    Two-dimensional (2D) gallium sulfide (GaS), hexagonal boron nitride (h-BN) and graphitic carbon nitride (g-C3N4) have been fabricated and expected to be promising photocatalysts under ultraviolet irradiation. Here, we employ hybrid density functional calculations to explore the potential of the 2D GaS-based heterojunctions GaS/h-BN (g-C3N4) for the design of efficient water redox photocatalysts. Both heterostructures can be formed via van der Waals (vdW) interaction and are direct bandgap semiconductors, whose bandgaps are reduced comparing with isolated GaS, h-BN or g-C3N4 monolayers and whose bandedges straddle water redox potentials. Furthermore, the optical absorption of GaS/h-BN (g-C3N4) heterostructures is observably enhanced in the ultraviolet-visible (UV-vis) light range. The electron-hole pairs in GaS/h-BN (g-C3N4) heterostructures are completely separated from different layers. In addition, the in-plane biaxial strain can effectively modulate the electronic properties of GaS/h-BN (g-C3N4) heterostructures. Thus the GaS/h-BN (g-C3N4) heterostructures are anticipated to be promising candidates for photocatalytic water splitting to produce hydrogen.

  10. Transport of a relativistic electron beam through hydrogen gas

    International Nuclear Information System (INIS)

    Haan, P. de.

    1981-01-01

    In this thesis the author describes the transport properties of an electron beam through vacuum and through hydrogen gas with pressure ranging from 25 to 1000 Pa. Maximum beam energy and current are 0.8 MeV and 6 kA, respectively. The pulse length is around 150 ns. A description is given of the experimental device. Also the diagnostics for probing the beam and the plasma, produced by the beam, are discussed, as well as the data acquisition system. The interaction between the beam and hydrogen gas with a pressure around 200 Pa is considered. A plasma with density around 10 19 m -3 is produced within a few nanoseconds. Measurements yield the atomic hydrogen temperature, electron density, beam energy loss, and induced plasma current and these are compared with the results of a model combining gas ionization and dissociation, and turbulent plasma heating. The angular distribution of the beam electrons about the magnetic field axis is discussed. (Auth.)

  11. Development of electron beam flue gas treatment technology

    International Nuclear Information System (INIS)

    Tanaka, T.

    1995-01-01

    The electron beam flue gas treatment technology is expected to bring many advantages such as the simultaneous reduction of SO x and NO x emissions, a dry process without waste water, valuable fertilizer byproducts, etc. In order to verify the feasibility and performances of the process, a practical application test is carried out with a pilot plant which treats the actual flue gas from a coal-fired boiler. Results are presented. 4 figs., 2 tabs

  12. Interaction of microwave radiation with the high mobility two-dimensional electron system in GaAs/AlGaAs heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Ramanayaka, A.N.; Ye, Tianyu; Liu, H.-C. [Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303 (United States); Wegscheider, W. [Laboratorium fuer Festkoerperphysik, ETH Zurich, 8093 Zurich (Switzerland); Mani, R.G., E-mail: rmani@gsu.edu [Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303 (United States)

    2014-11-15

    The influence of microwave excitation on the magnetotransport properties of the high mobility two-dimensional electron system (2DES) in the GaAs/AlGaAs heterostructure system is investigated by exploring (a) the dependence of the amplitude of the microwave-induced magnetoresistance-oscillations on the polarization direction of the linearly polarized microwaves and (b) the microwave reflection from the 2DES. The polarization study indicates that the amplitude of the magnetoresistance oscillations is remarkably responsive to the relative orientation between the linearly polarized microwaves and the current-axis in the specimen. At low microwave power, P, experiments indicate a strong sinusoidal variation in the diagonal resistance R{sub xx} vs. θ at the oscillatory extrema of the microwave-induced magnetoresistance oscillations. The reflection study indicates strong correlations between the microwave induced magnetoresistance oscillations and oscillatory features in the microwave reflection in a concurrent measurement of the magnetoresistance and the microwave magnetoreflection from the 2DES. The correlations are followed as a function of the microwave frequency and the microwave power, and the results are reported.

  13. Interaction of microwave radiation with the high mobility two-dimensional electron system in GaAs/AlGaAs heterostructures

    International Nuclear Information System (INIS)

    Ramanayaka, A.N.; Ye, Tianyu; Liu, H.-C.; Wegscheider, W.; Mani, R.G.

    2014-01-01

    The influence of microwave excitation on the magnetotransport properties of the high mobility two-dimensional electron system (2DES) in the GaAs/AlGaAs heterostructure system is investigated by exploring (a) the dependence of the amplitude of the microwave-induced magnetoresistance-oscillations on the polarization direction of the linearly polarized microwaves and (b) the microwave reflection from the 2DES. The polarization study indicates that the amplitude of the magnetoresistance oscillations is remarkably responsive to the relative orientation between the linearly polarized microwaves and the current-axis in the specimen. At low microwave power, P, experiments indicate a strong sinusoidal variation in the diagonal resistance R xx vs. θ at the oscillatory extrema of the microwave-induced magnetoresistance oscillations. The reflection study indicates strong correlations between the microwave induced magnetoresistance oscillations and oscillatory features in the microwave reflection in a concurrent measurement of the magnetoresistance and the microwave magnetoreflection from the 2DES. The correlations are followed as a function of the microwave frequency and the microwave power, and the results are reported

  14. Implementing the GISB standards in Canada - electronic gas trading

    International Nuclear Information System (INIS)

    Anderson, I.

    1999-01-01

    Standards promulgated by the Gas Industry Standards Board (GISB) in the United States, its objective and applicability in Canada are discussed. The standards, while sponsored by an American trade organization, have had significant Canadian input, and are considered applicable throughout North America, although implementation in Canada is voluntary. In developing the standards, the intent of the GISB was to developing business practice and electronic commerce standards for the natural gas industry. Despite voluntary application in Canada, Canadians are affected by the standards since some 50 per cent of Canadian gas is exported to U.S. consumers, and U.S. gas is imported for Canadian consumers in certain parts of the country. In actual fact. a Canadian GISB Implementation Task Force has been established to develop recommendations for Canadian implementation. The task force is broadly representative of the industry and published its report in March of 1997. It explains the nature of the standards and provides details about the definition of 'gas day' , nomination schedules, accounting issues, electronic delivery mechanisms, capacity release, standard unit of measure for nominations, confirmations, scheduling, measurement reports and invoicing. Questions regarding electronic contracting and enforceability of electronic contracts also have been reviewed. Details are currently under consideration by a Working Group. Status of contracts under the Statute of Frauds, the Evidence Act and the Interpretation Act is reviewed, and legislative requirements in Canada to make electronic commerce legally enforceable are outlined. At present electronic transactions would likely be enforceable provided they are preceded by a paper-based Electronic Commerce Trading Partner Agreement

  15. Octahedral rotations in strained LaAlO3/SrTiO3 (001 heterostructures

    Directory of Open Access Journals (Sweden)

    T. T. Fister

    2014-02-01

    Full Text Available Many complex oxides display an array of structural instabilities often tied to altered electronic behavior. For oxide heterostructures, several different interfacial effects can dramatically change the nature of these instabilities. Here, we investigate LaAlO3/SrTiO3 (001 heterostructures using synchrotron x-ray scattering. We find that when cooling from high temperature, LaAlO3 transforms from the Pm3¯m to the Imma phase due to strain. Furthermore, the first 4 unit cells of the film adjacent to the substrate exhibit a gradient in rotation angle that can couple with polar displacements in films thinner than that necessary for 2D electron gas formation.

  16. Nonequilibrium Transport and the Bernoulli Effect of Electrons in a Two-Dimensional Electron Gas

    Science.gov (United States)

    Kaya, Ismet I.

    2013-02-01

    Nonequilibrium transport of charged carriers in a two-dimensional electron gas is summarized from an experimental point of view. The transport regime in which the electron-electron interactions are enhanced at high bias leads to a range of striking effects in a two-dimensional electron gas. This regime of transport is quite different than the ballistic transport in which particles propagate coherently with no intercarrier energy transfer and the diffusive transport in which the momentum of the electron system is lost with the involvement of the phonons. Quite a few hydrodynamic phenomena observed in classical gasses have the electrical analogs in the current flow. When intercarrier scattering events dominate the transport, the momentum sharing via narrow angle scattering among the hot and cold electrons lead to negative resistance and electron pumping which can be viewed as the analog of the Bernoulli-Venturi effect observed classical gasses. The recent experimental findings and the background work in the field are reviewed.

  17. Terahertz Plasma Waves in Two Dimensional Quantum Electron Gas with Electron Scattering

    International Nuclear Information System (INIS)

    Zhang Liping

    2015-01-01

    We investigate the Terahertz (THz) plasma waves in a two-dimensional (2D) electron gas in a nanometer field effect transistor (FET) with quantum effects, the electron scattering, the thermal motion of electrons and electron exchange-correlation. We find that, while the electron scattering, the wave number along y direction and the electron exchange-correlation suppress the radiation power, but the thermal motion of electrons and the quantum effects can amplify the radiation power. The radiation frequency decreases with electron exchange-correlation contributions, but increases with quantum effects, the wave number along y direction and thermal motion of electrons. It is worth mentioning that the electron scattering has scarce influence on the radiation frequency. These properties could be of great help to the realization of practical THz plasma oscillations in nanometer FET. (paper)

  18. Theory of the one- and two-dimensional electron gas

    International Nuclear Information System (INIS)

    Emery, V.J.

    1987-01-01

    Two topics are discussed: (1) the competition between 2k/sub F/ and 4k/sub F/ charge state waves in a one-dimensional electron gas and (2) a two-dimensional model of high T/sub c/ superconductivity in the oxides

  19. The Gas Electron Multiplier Chamber Exhibition LEPFest 2000

    CERN Multimedia

    2000-01-01

    The Gas Electron Multiplier (GEM) is a novel device introduced in 1996.Large area detectors based on this technology are in construction for high energy physics detectors.This technology can also be used for high-rate X-ray imaging in medical diagnostics and for monitoring irradiation during cancer treatment

  20. Development of electron beam flue gas treatment technology

    International Nuclear Information System (INIS)

    Tokunaga, Okihiro; Namba, Hideki; Tanaka, Tadashi; Ogura, Yoshimi; Doi, Yoshitake; Aoki, Shinji; Izutsu, Masahiro.

    1995-01-01

    Smoke treatment system making use of electron beam irradiation made it possible to simultaneously eliminate SOx and NOn from exhaust gas. The fundamental study of the system was started in the seventies and at present, its application in practical use is under way. A pilot plant for the smoke treatment system was constructed in cooperation of Chubu Electric Power Company, Inc., Japan Atomic Energy Research Institute and Ebara Corporation and several tests with the actual exhaust gas were conducted during the period, Oct. 1992-Dec. 1993 and the treatment efficiency and the control capacity of this system was confirmed to be so high as the conventional systems and many engineering data were obtained. A high treatment efficiency (>94% for desulfurization and >80% for denitrification) was obtainable by choosing the optimum irradiation amount of electron beam and the optimum temperature of gas to treat. And this system was found superior from a financial aspect to the conventional smoke treatment system. (M.N.)

  1. Electron cloud sizes in gas-filled detectors

    International Nuclear Information System (INIS)

    Boggende, A.J.F. den; Schrijver, C.J.

    1984-01-01

    Electron cloud sizes have been calculated for gas mixtures containing Ar, Xe, CO 2 , CH 4 , and N 2 for drifts through a constant electric field. The transport coefficients w and D/μ are in good agreement with experimental data of various sources for pure gases. Results of measurements, also performed in this work, for Ar+CO 2 , Ar+CH 4 , and Ar+Xe+CO 2 mixtures are in fair agreement with the calculated cloud sizes. For a large number of useful gas mixtures calculated electron cloud sizes are presented and discussed, most of which are given for the first time. A suggestion is made for an optimal gas mixture for an X-ray position sensitive proportional counter for medium and low energies. (orig.)

  2. Charge-transfer properties in the gas electron multiplier

    International Nuclear Information System (INIS)

    Han, Sanghyo; Kim, Yongkyun; Cho, Hyosung

    2004-01-01

    The charge transfer properties of a gas electron multiplier (GEM) were systematically investigated over a broad range of electric field configurations. The electron collection efficiency and the charge sharing were found to depend on the external fields, as well as on the GEM voltage. The electron collection efficiency increased with the collection field up to 90%, but was essentially independent of the drift field strength. A double conical GEM has a 10% gain increase with time due to surface charging by avalanche ions whereas this effect was eliminated with the cylindrical GEM. The positive-ion feedback is also estimated. (author)

  3. Small angle elastic scattering of electrons by noble gas atoms

    International Nuclear Information System (INIS)

    Wagenaar, R.W.

    1984-01-01

    In this thesis, measurements are carried out to obtain small angle elastic differential cross sections in order to check the validity of Kramers-Kronig dispersion relations for electrons scattered by noble gas atoms. First, total cross sections are obtained for argon, krypton and xenon. Next, a parallel plate electrostatic energy analyser for the simultaneous measurement of doubly differential cross section for small angle electron scattering is described. Also absolute differential cross sections are reported. Finally the forward dispersion relation for electron-helium collisions is dealt with. (Auth.)

  4. Multiple scattering of slow muons in an electron gas

    International Nuclear Information System (INIS)

    Archubi, C.D.; Arista, N.R.

    2017-01-01

    A comparative study of the angular dispersion of slow muons in an electron gas is performed using 3 dielectric models which represent the case of metals (Lindhard model for a free electron gas) and the cases of semiconductors and insulators (Levine and Louie model and Brandt and Reinheimer model for systems with a band gap) and a non-linear model for both cases at very low velocities. The contribution of collective electronic excitations according to the dielectric model are found to be negligible. The results from the calculation using Lindhard expressions for the angular half width are consistent with the result of a multiple scattering model. In particular, the effects produced by the band gap of the material are analyzed in detail. Finally, as the recoil effect is negligible, there is an almost exact scaling, for a given velocity, between the proton and the muon results. (authors)

  5. Applicability of the local field concept for the electron gas

    International Nuclear Information System (INIS)

    Neilson, D.; Sjoelander, A.; Swierkowski, L.

    1990-01-01

    The static exchange-correlation hole surrounding an electron in an electron gas at metallic densities has been a highly successful and useful concept. The properties of the static exchange-correlation hole can be accurately reflected by the construction of a static local field. This field surrounds each electron and modifies it interaction with the other electrons in the system. An important limitation of the local field concept is that it does not handle the time-dependent relaxation of the surrounding electron cloud in a particularly transparent way. At metallic densities this is if no consequence since relaxation effects are only small corrections anyway, but at lower densities and in two-dimensional systems they become increasingly important. Approaches which attempt to address these problems are discussed. (author). 12 refs, 4 figs

  6. Electron kinetics modeling in a weakly ionized gas

    International Nuclear Information System (INIS)

    Boeuf, Jean-Pierre

    1985-01-01

    This work presents some features of electron kinetics in a weakly ionized gas. After a summary of the basis and recent developments of the kinetic theory, and a review of the most efficient numerical techniques for solving the Boltzmann equation, several aspects of electron motion in gases are analysed. Relaxation phenomena toward equilibrium under a uniform electric field, and the question of the existence of the hydrodynamic regime are first studied. The coupling between electron kinetics and chemical kinetics due to second kind collisions in Nitrogen is then analysed; a quantitative description of the evolution of the energy balance, accounting for electron-molecule as well as molecule-molecule energy transfer is also given. Finally, electron kinetics in space charge distorted, highly non uniform electric fields (glow discharges, streamers propagation) is investigated with microscopic numerical methods based on Boltzmann and Poisson equations. (author) [fr

  7. New concept of gas purification by electron attachment

    International Nuclear Information System (INIS)

    Tamon, Hajime; Mizota, Hirotoshi; Sano, Noriaki; Schulze, S.; Okazaki, Morio

    1995-01-01

    Recently, the public has become interested in the following types of gas purification: (1) removal of indoor air pollutants; (2) complete removal of dioxin from incineration plants; (3) complete removal of radioactive iodine compounds; (4) simultaneous removal of NOx and SOx in exhaust gases from cogeneration plants; (5) removal and decomposition of halocarbons; (6) ultrahigh purification of gas sued for semiconductor industries. A new concept of gas purification by electron attachment is proposed. Low-energy electrons generated in a corona-discharge reactor are captured by electronegative impurities, producing negative ions. The ions drift to the anode in the electric field and are removed at the anode of the reactor. Two types of reactors were used to remove the negative ions: a deposition-type reactor, which deposits negative ions at the anode surface; a sweep-out-type reactor, which sweeps out enriched electronegative impurities through the porous anode. Removals of dilute sulfur compounds, oxygen and iodine from nitrogen were conducted to verify the concept of gas purification. Simulation models were used to estimate removal efficiencies of these compounds, by taking into account electron attachment, and experimental constants of the models were determined. The removal efficiency correlated by the models agreed well with the experimental one

  8. Characterization of core-shell GaAs/AlGaAs nanowire heterostructures using advanced electron microscopy

    International Nuclear Information System (INIS)

    Tambe, M J; Gradecak, S; Allard, L F

    2010-01-01

    To explore the unique properties of the nanoscale, advanced fabrication and characterization techniques are required. Specifically analyses in two orthogonal directions, plan-view and cross-section, were used to prove the core-shell morphology of GaAs/AlGaAs nanowires and determine their cross-section to be hexagonal. High-resolution transmission electron microscopy and high angle annular dark field scanning transmission electron microscopy confirmed the core-shell interface to be defect-free, coherent, and sharp ( 0.9 Ga 0.1 As uniformly along the length of the nanowire. These results demonstrate the power of electron microscopy to aid the development of semiconductor nanotechnology.

  9. Electron and hole spectrum in InAs quantum dot renormalized by InAs/GaAs heterostructure deformation

    International Nuclear Information System (INIS)

    Dan'kiv, O.O.; Peleshchak, R.M.

    2005-01-01

    Analytical expressions describing the energy spectrum of electrons and holes are obtained for a quantum dot occurring in a self-consistent strain field created by an array of coherently stressed quantum dots. A method of taking into account the lattice mismatch at the quantum dot-matrix interface is proposed that allows for the dependence of the mismatch parameter on the quantum dot size and the matrix layer thickness. It is shown that the internal elastic strain arising at the quantum dot-matrix interface influences the energy spectrum of electrons more significantly than the spectrum of holes [ru

  10. Substitutionally doped phosphorene: electronic properties and gas sensing.

    Science.gov (United States)

    Suvansinpan, Nawat; Hussain, Fayyaz; Zhang, Gang; Chiu, Cheng Hsin; Cai, Yongqing; Zhang, Yong-Wei

    2016-02-12

    Phosphorene, a new elemental two-dimensional material, has attracted increasing attention owing to its intriguing electronic properties. In particular, pristine phospohorene, due to its ultrahigh surface-volume ratio and high chemical activity, has been shown to be promising for gas sensing (Abbas et al 2015 ACS Nano 9 5618). To further enhance its sensing ability, we perform first-principles calculations based on density functional theory to study substitutionally doped phosphorene with 17 different atoms, focusing on structures, energetics, electronic properties and gas sensing. Our calculations reveal that anionic X (X = O, C and S) dopants have a large binding energy and highly dispersive electronic states, signifying the formation of covalent X-P bonds and thus strong structural stability. Alkali atom (Li and Na) doping is found to donate most of the electrons in the outer s-orbital by forming ionic bonds with P, and the band gap decreases by pushing down the conduction band, suggesting that the optical and electronic properties of the doped phosphorene can be tailored. For doping with VIIIB-group (Fe, Co and Ni) elements, a strong affinity is predicted and the binding energy and charge transfer are correlated strongly with their electronegativity. By examining NO molecule adsorption, we find that these metal doped phosphorenes (MDPs) in general exhibit a significantly enhanced chemical activity compared with pristine phosphorene. Our study suggests that substitutionally doped phosphorene shows many intriguing electronic and optic properties different from pristine phosphorene and MDPs are promising in chemical applications involving molecular adsorption and desorption processes, such as materials growth, catalysis, gas sensing and storage.

  11. Electron Excess Doping and Effective Schottky Barrier Reduction on the MoS2/h-BN Heterostructure.

    Science.gov (United States)

    Joo, Min-Kyu; Moon, Byoung Hee; Ji, Hyunjin; Han, Gang Hee; Kim, Hyun; Lee, Gwanmu; Lim, Seong Chu; Suh, Dongseok; Lee, Young Hee

    2016-10-12

    Layered hexagonal boron nitride (h-BN) thin film is a dielectric that surpasses carrier mobility by reducing charge scattering with silicon oxide in diverse electronics formed with graphene and transition metal dichalcogenides. However, the h-BN effect on electron doping concentration and Schottky barrier is little known. Here, we report that use of h-BN thin film as a substrate for monolayer MoS 2 can induce ∼6.5 × 10 11 cm -2 electron doping at room temperature which was determined using theoretical flat band model and interface trap density. The saturated excess electron concentration of MoS 2 on h-BN was found to be ∼5 × 10 13 cm -2 at high temperature and was significantly reduced at low temperature. Further, the inserted h-BN enables us to reduce the Coulombic charge scattering in MoS 2 /h-BN and lower the effective Schottky barrier height by a factor of 3, which gives rise to four times enhanced the field-effect carrier mobility and an emergence of metal-insulator transition at a much lower charge density of ∼1.0 × 10 12 cm -2 (T = 25 K). The reduced effective Schottky barrier height in MoS 2 /h-BN is attributed to the decreased effective work function of MoS 2 arisen from h-BN induced n-doping and the reduced effective metal work function due to dipole moments originated from fixed charges in SiO 2 .

  12. Heavy-Ion-Induced Electronic Desorption of Gas from Metals

    CERN Document Server

    Molvik, A W; Mahner, E; Kireeff Covo, M; Bellachioma, M C; Bender, M; Bieniosek, F M; Hedlund, E; Krämer, A; Kwan, J; Malyshev, O B; Prost, L; Seidl, P A; Westenskow, G; Westerberg, L

    2007-01-01

    During heavy-ion operation in several particle accelerators worldwide, dynamic pressure rises of orders of magnitude were triggered by lost beam ions that bombarded the vacuum chamber walls. This ion-induced molecular desorption, observed at CERN, GSI, and BNL, can seriously limit the ion beam lifetime and intensity of the accelerator. From dedicated test stand experiments we have discovered that heavy-ion-induced gas desorption scales with the electronic energy loss (dEe/dx) of the ions slowing down in matter; but it varies only little with the ion impact angle, unlike electronic sputtering.

  13. Equation of state for electron gas in the presence of electron-positron pairs

    Energy Technology Data Exchange (ETDEWEB)

    Sugimoto, D; Nomoto, K [Tokyo Univ. (Japan). Coll. of General Education

    1975-12-01

    Fermi-Dirac integrals for partially relativistic, partially degenerate, electron gas are tabulated, especially for the region of electron-positron pair-creation in equilibrium with radiation field. Electrons are treated to be non-interacting particles. Independent entries for the table are non-dimensional temperature and a degeneracy parameter which is related directly with matter density. Thermodynamical quantities and their partial derivatives with respect to density and temperature are also given in table, which are intended for use in computing stellar evolution by means of a Henyey-type technique. This table is a supplement to one published earlier, in which only electrons were taken into account explicitly.

  14. Injection of a relativistic electron beam into neutral hydrogen gas

    International Nuclear Information System (INIS)

    de Haan, P.H.; Janssen, G.C.A.M.; Hopman, H.J.; Granneman, E.H.A.

    1982-01-01

    The injection of a relativistic electron beam (0.8 MeV, 6 kA, 150 nsec) into hydrogen gas of 190 Pa pressure results in a plasma with density n/sub e/approx. =10 20 m -3 and temperature kT/sub e/< or approx. =kT/sub i/approx. =3.5 eV. The results of the measurements show good agreement with computations based on a model combining gas ionization and turbulent plasma heating. It is found that a quasistationary state exists in which the energy lost by the beam (about 6% of the total kinetic energy of the beam) is partly used to further ionize and dissociate the gas and for the other part is lost as line radiation

  15. Stable propagation of an electron beam in gas

    International Nuclear Information System (INIS)

    Lee, E.P.; Chambers, F.W.; Lodestro, L.L.; Yu, S.S.

    1977-01-01

    Conditions for the stable propagation of a pinched electron beam in low pressure gas (p approximately 0.1 to 100 torr) are described. The observed window of good propagation around p approximately 2 torr air is interpreted as the quenching of the two-stream mode by sufficiently high plasma density and collision frequency, and the simultaneous suppression of the resistive hose mode by sufficiently rapid generation of electrical conductivity from breakdown ionization

  16. Two-dimensional heterostructures for energy storage

    Energy Technology Data Exchange (ETDEWEB)

    Gogotsi, Yury G. [Drexel Univ., Philadelphia, PA (United States); Pomerantseva, Ekaterina [Drexel Univ., Philadelphia, PA (United States)

    2017-06-12

    Two-dimensional (2D) materials provide slit-shaped ion diffusion channels that enable fast movement of lithium and other ions. However, electronic conductivity, the number of intercalation sites, and stability during extended cycling are also crucial for building high-performance energy storage devices. While individual 2D materials, such as graphene, show some of the required properties, none of them can offer all properties needed to maximize energy density, power density, and cycle life. Here we argue that stacking different 2D materials into heterostructured architectures opens an opportunity to construct electrodes that would combine the advantages of the individual building blocks while eliminating the associated shortcomings. We discuss characteristics of common 2D materials and provide examples of 2D heterostructured electrodes that showed new phenomena leading to superior electrochemical performance. As a result, we also consider electrode fabrication approaches and finally outline future steps to create 2D heterostructured electrodes that could greatly expand current energy storage technologies.

  17. Determination of Penetration Depth of 800 keV Electron Beam into Coal Fired Power Plant Flue Gas at in a Electron Beam Machine Flue Gas Treatment System

    International Nuclear Information System (INIS)

    Rany Saptaaji

    2008-01-01

    Penetration depth calculation of 800 keV electron beam into flue gas from coal fired power plan is presented in this paper. Electron Beam for Flue Gas Treatment (EB-FGT) is a dry treatment process using electron beam to simultaneously reduce SO 2 and NO x . Flue gas irradiation produces active radicals and then reaction with SO 2 and NO x produces nitrate acid and sulphate acid. Process vessel is needed in this process as reaction container of flue gas with electron beam. The calculation of electron beam penetration depth into flue gas is used to determine the process vessel dimension. The result of calculation of optimum penetration depth of 800 keV electron beam into flue gas is 188.67 cm. (author)

  18. Strong coupling between bi-dimensional electron gas and nitrogen localized states in heavily doped GaAs1-xN x structures

    International Nuclear Information System (INIS)

    Hamdouni, A.; Bousbih, F.; Ben Bouzid, S.; Oueslati, M.; Chtourou, R.; Harmand, J.C.

    2005-01-01

    We report a low-temperature photoluminescence spectra (LTPL) of GaAs 1-x N x layers and two-dimension electron gas (2DEG) GaAs 1-x N x /AlGaAs modulation doped heterostructure grown on GaAs substrates by molecular beam epitaxy (MBE) with low nitrogen content [N] = 2 x 10 18 cm -3 . At low temperature, PL spectra of GaAs 1-x N x layers are governed by several features associate to the excitons bound to nitrogen complexes, these features disappear in (2DEG) GaAs 1-x N x /AlGaAs modulation doped heterostructure and the PL peak energy decrease with the laser power excitation. This effect is explained by the strongly coupling of the (2DEG) fundamental state with the nitrogen localized states. An activated energy of about 55 meV is deduced by photoluminescence measurements in the 10-300 K range for a laser power excitation P = 6 W/cm 2

  19. Characterization of GaAs and hetero-structures of GaAs-(AlGa)As films, by Hall effect

    International Nuclear Information System (INIS)

    Diniz, R.P.

    1989-08-01

    Hall effect measurements were performed on a series of semiconductor gallium arsenide (GaAs) films, intentionally or unitentionally doped, grown by molecular beam epitaxy (MBE). These measurements made possible both the evaluation of the films quality and the calibration of the dopants (Si and Be) effusion cells on the growing machine. Measurements on modulation doped single interface heterostructures also grown by MBE followed. The two dimensional electron gas in the heterostructures shows low temperature high mobility. The application of a strong magnetic field perpendicular to the plane of the gas eliminated its degrees of freedom completely and permitted the observation of Schubnikov-deHaas oscillations and integer quantum Hall effect. During the work we have deviced and developed apparatus in order to make ohmic contacts and perform litography to semiconductors. (author) [pt

  20. Ab-initio study of structural and electronic properties of WS2/h-BN van der Waals heterostructure

    Science.gov (United States)

    Ghasemi majd, Zahra; Amiri, Peiman; Taghizadeh, Seyed Fardin

    2018-06-01

    First-principle calculations with different exchange-correlation functionals, including LDA, GGA, semi-empirical and ab-initio van der Waals in the forms of vdW-DF2B86R and vdW-DF2 were performed to evaluate the performance of different functionals in describing the bonding mechanism, adsorption energy and interlayer distance of WS2 monolayer on and between h-BN layers. The finding was that the vdW-DF2B86R seems to be the approach best lending itself to this purpose. In order to include the van der Waals (vdW) interactions in our calculations, we used the DFT-D2 and vdW methods, which gave rise to a physical adsorption with no net charge transfer between the WS2 layer and the corresponding substrates. In addition, we investigated the electronic and structural properties of WS2 and h-BN heterolayers, using vdW-DF2B86R functional. Based on density functional theory calculations, WS2 on and between h-BN layers showed a direct band gap at the K-point, which was experimentally observed.

  1. TiO2/ CNT hetero-structure with variable electron beam diameter suitable for nano lithography

    International Nuclear Information System (INIS)

    Barati, F.; Abdi, Y.; Arzi, E.

    2012-01-01

    We report fabrication of a novel TiO 2 /carbon nano tube based field emission device suitable for nano lithography and fabrication of transistor. The growth of carbon nano tubes is performed on silicon substrates using plasma-enhanced chemical vapor deposition method. The vertically grown carbon nano tubes are encapsulated by TiO 2 using an atmospheric pressure chemical vapor deposition system. Field emission from the carbon nano tubes is realized by mechanical polishing of the prepared nano structure. The possibility of the application of such nano structures as a lithography tool with variable electron beam diameter was investigated. The obtained results show that spot size of less than 30 nm can be obtained by applying a proper voltage on TiO 2 surrounding gate. Electrical measurements of the fabricated device confirm the capability of this nano structure for the fabrication of field emission based field effect transistor. By applying a voltage between the gate and the cathode electrode, the emission current from carbon nano tubes shows a significant drop, indicating proper control of gate on the emission current.

  2. Variable electron beam diameter achieved by a titanium oxide/carbon nanotube hetero-structure suitable for nanolithography

    International Nuclear Information System (INIS)

    Abdi, Yaser; Barati, Fatemeh

    2013-01-01

    We report the fabrication of a titanium oxide/carbon nanotube based field emission device suitable for nanolithography and fabrication of transistors. The growth of carbon nanotubes (CNTs) is performed on silicon substrates using a plasma-enhanced chemical vapor deposition method. The vertically grown CNTs are encapsulated by titanium oxide (TiO 2 ) using an atmospheric pressure chemical vapor deposition system. Field emission from the CNTs is realized by mechanical polishing of the prepared structure. Possible applications of such nanostructures as a lithography tool with variable electron beam diameter has been investigated. The obtained results show that a spot size of less than 30 nm can be obtained by applying the proper voltage on TiO 2 surrounding gate. Electrical measurements of the fabricated device confirm the capability of the structure for fabrication of field emission based field effect transistors. By a voltage applied between the gate and the cathode electrode, the emission current from CNTs shows a significant drop, indicating proper control of the gate on the emission current. (paper)

  3. Dissociative attachment reactions of electrons with gas phase superacids

    International Nuclear Information System (INIS)

    Liu, X.

    1992-01-01

    Using the flowing afterglow Langmuir probe (FALP) technique, dissociative attachment coefficients β for reactions of electrons with gas phase superacids HCo(PF 3 ) 4 , HRh(PF 3 ) 4 and carbonyl hydride complexes HMn(CO) 5 , HRe(CO) 5 have been determined under thermal conditions over the approximate temperature range 300∼550 K. The superacids react relatively slowly ( max ) with free electrons in a thermal plasma, and the values of β obtained this far do not show a correlation between acidity and β. The pioneer researchers in this field had speculated that any superacid would be a rapid attacher of electrons; it was found that this speculation is not true in general. The product distribution of electron attachment reaction to HCo(PF 3 ) 4 was found to be independent of temperature even though the β[HCo(PF 3 ) 4 ] increases with temperature. This proposes that the electron attachment process occurs well before the excited complex dissociates. In addition, the activation energy of HCo(PF 3 ) 4 for electron attachment has been derived from the Arrhenius plots. The carbonyl hydride complexes, HMn(CO) 5 and HRe(CO) 5 , react relatively rapidly (>1/4 of β max ) with free electrons in thermal plasma. This indicates that these reactions cannot be significantly endothermic. Observation of rapid attachment for these non-superacids shows that the Mn-CO and Re-CO bonds are weaker than the Mn-H and Re-H bonds, respectively. Comparisons between the carbonyl and trifluorophosphine cases implies that fast electron capture is related more to the CO ligand than to the transition-metal species

  4. nomalous Interface and Surface Strontium Segregation in (La1-ySry)2CoO4 /La1-xSrxCoO3- Heterostructured Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Zhenxing [Massachusetts Institute of Technology (MIT); Yacoby, Yuzhak [Massachusetts Institute of Technology (MIT); Gadre, Milind [Massachusetts Institute of Technology (MIT); Lee, Yueh-Lin [Massachusetts Institute of Technology (MIT); Hong, W. [Harvard University; Zhou, Hua [Argonne National Laboratory (ANL); Biegalski, Michael D [ORNL; Christen, Hans M [ORNL; Adler, Stuart [University of Washington; Morgan, Dane [University of Wisconsin, Madison; Shao-Horn, Yang [Massachusetts Institute of Technology (MIT)

    2014-01-01

    Heterostructured materials have shown unusual physiochemical properties at the interfaces such as two dimensional electron gas systems, high-temperature superconductivity, and enhanced catalysis. Here we report the first atomic-scale evidence of the microscopic structure of a perovskite/Ruddlesden-Popper heterostructure (having La1-xSrxCoO3- /(La1-ySry)2CoO4 ), and anomalous strontium segregation at the interface and in the Ruddlesden-Popper structure using direct X-ray methods combined with ab initio calculations. The remarkably enhanced activity of such heterostructured surfaces relative to bulk perovskite and Ruddlesden-Popper oxides previously shown for oxygen electrocatalysis at elevated temperatures can be attributed to reduced thermodynamic penalty of oxygen vacancies in the oxide structure associated with Sr segregation observed in the heterostructure. Our findings provide insights for the design of highly active catalysts for energy conversion and storage applications.

  5. Electromagnetic effects of neutrinos in an electron gas

    International Nuclear Information System (INIS)

    Nieves, Jose F.; Sahu, Sarira

    2005-01-01

    We study the electromagnetic properties of a system that consists of an electron background and a neutrino gas that may be moving or at rest, as a whole, relative to the background. The photon self-energy for this system is characterized by the usual transverse and longitudinal polarization functions, and two additional ones which are the focus of our calculations, that give rise to birefringence and anisotropic effects in the photon dispersion relations. Expressions for them are obtained, which depend on the neutrino number densities and involve momentum integrals over the electron distribution functions, and are valid for any value of the photon momentum and general conditions of the electron gas. Those expressions are evaluated explicitly for several special cases and approximations which are generally useful in astrophysical and cosmological settings. Besides studying the photon dispersion relations, we consider the macroscopic electrodynamic equations for this system, which involve the standard dielectric and permeability constants plus two additional ones related to the photon self-energy functions. As an illustration, the equations are used to discuss the evolution of a magnetic field perturbation in such a medium. This particular phenomena has also been considered in a recent work by Semikoz and Sokoloff as a mechanism for the generation of large-scale magnetic fields in the early Universe as a consequence of the neutrino-plasma interactions, and allows us to establish contact with a specific application in a well defined context, with a broader scope and from a very different point of view

  6. Absolute Negative Resistance Induced by Directional Electron-Electron Scattering in a Two-Dimensional Electron Gas

    Science.gov (United States)

    Kaya, Ismet I.; Eberl, Karl

    2007-05-01

    A three-terminal device formed by two electrostatic barriers crossing an asymmetrically patterned two-dimensional electron gas displays an unusual potential depression at the middle contact, yielding absolute negative resistance. The device displays momentum and current transfer ratios that far exceed unity. The observed reversal of the current or potential in the middle terminal can be interpreted as the analog of Bernoulli’s effect in a Fermi liquid. The results are explained by directional scattering of electrons in two dimensions.

  7. Intensity dependence of electron gas kinetics in a laser corona

    Directory of Open Access Journals (Sweden)

    Mašek Martin

    2013-11-01

    Full Text Available In various experimental situations relevant to the laser fusion, such as plasma near the light entrance holes of hohlraum in the indirect drive experiments or more recently in the shock ignition direct drive a relatively long underdense plasma of corona type is encountered, which is subject to an intense nanosecond laser beam. The plasma is only weakly collisional and thus in the electron phase space a complicated kinetic evolution is going on, which is taking the electron gas fairly far from the thermal equilibrium and contributes to its unstable behaviour. These phenomena impede the absorption and thermalization of the incoming laser energy, create groups of fast electrons and also may lead to a non-linear reflection of the heating laser beam. One of the key processes leading to the electron acceleration is the stimulated Raman scattering (SRS in its non-linear phase. The SRS in the presence of electron-ion collisions requires a certain threshold intensity above which the mentioned non-dissipative phenomena can occur and develop to the stage, where they may become unpleasant for the fusion experiments. To assess this intensity limit a computational model has been developed based on the Vlasov-Maxwell kinetics describing such a plasma in 1D geometry. At a relatively high intensity of 1016 W/cm2 a number of non-linear phenomena are predicted by the code such as a saturation of Landau damping, which is then translated in an unfavourable time dependence of the reflected light intensity and formation of accelerated electron groups due to the electron trapping. The purpose of the present contribution is to map the intensity dependence of this non-linear development with the aim of assessing its weight in fusion relevant situations.

  8. High-current electron accelerator for gas-laser pumping

    Energy Technology Data Exchange (ETDEWEB)

    Badaliants, G R; Mamikonian, V A; Nersisian, G Ts; Papanian, V O

    1978-11-26

    A high-current source of pulsed electron beams has been developed for the pumping of UV gas lasers. The parameters of the device are: energy of 0.3-0.7 MeV pulse duration of 30 ns and current density (in a high-pressure laser chamber) of 40-100 A/sq cm. The principal feature of the device is the use of a rectangular cold cathode with incomplete discharge along the surface of the high-permittivity dielectric. Cathodes made of stainless steel, copper, and graphite were investigated.

  9. Chemical kinetics of flue gas cleaning by electron beam

    International Nuclear Information System (INIS)

    Maetzing, H.

    1989-02-01

    By electron beam treatment of flue gases, NO x and SO 2 are converted to nitric and sulfuric acids simultaneously. Upon ammonia addition, the corresponding salts are collected in solid state and can be sold as fertilizer. Both homogeneous gas phase reactions and physico-chemical aerosol dynamics are involved in product formation. These processes have been analyzed by model calculations. In part 1, the present report summarizes the model results and gives an account of the theoretical understanding of the EBDS process and its performance characteristics. Part 2 of this report gives a complete listing of the reactions used in the AGATE code. (orig.) [de

  10. Electron-beam synthesis of fuel in the gas phase

    International Nuclear Information System (INIS)

    Ponomarev, A.V.; Holodkova, E.M.; Ershov, B.G.

    2011-01-01

    Complete text of publication follows. Tendencies of world development focus attention on a vegetative biomass as on the major raw resource for future chemistry and a fuel industry. The significant potential for perfection of biomass conversion processes is concentrated in the field of radiation-chemical methods. Both the mode of post-radiation distillation and mode of electron-beam distillation of biomass have been investigated as well as the mode of gas-phase synthesis of liquid engine fuel from of biomass distillation products. Synergistic action of radiation and temperature has been analyzed at use of the accelerated electron beams allowing to combine radiolysis with effective radiation heating of a material without use of additional heaters. At dose rate above 1 kGy/s the electron-beam irradiation results in intensive decomposition of a biomass and evaporation of formed fragments with obtaining of a liquid condensate (∼ 60 wt%), CO 2 and Co gases (13-18 wt%) and charcoal in the residue. Biomass distillation at radiation heating allows to increase almost three times an organic liquid yield in comparison with pyrolysis. The majority of liquid products from cellulose is represented by the furan derivatives considered among the very perspective components for alternative engine fuels. Distilled-off gases and vapors are diluted with gaseous C 1 -C 5 alkanes and again are exposed to an irradiation to produce liquid fuel from a biomass. This transformation is based on a method of electron-beam circulation conversion of gaseous C 1 -C 5 alkanes (Ponomarev, A.V., Radiat. Phys. Chem., 78, 48, 2009) which consists in formation and removal of liquid products with high degree of carbon skeleton branching. The isomers ratio in a liquid may be controlled by means of change of an irradiation condition and initial gas composition. The irradiation of gaseous alkanes together with vaporous products of biomass destruction allows to synthesize the fuel enriched by conventional

  11. Response of a relativistic quantum magnetized electron gas

    International Nuclear Information System (INIS)

    Melrose, Donald B; Weise, Jeanette I

    2009-01-01

    The response 4-tensor is derived for a spin-independent, relativistic magnetized quantum electron gas. The sum over spins is carried out both directly and using a procedure due to Ritus. The 4-tensor components are written in terms of a sum over the two solutions of the resonance condition for the particle 4-momentum. It is shown that the dispersive properties may be described in terms of a single plasma dispersion function, for arbitrary occupation numbers for electrons and positrons in each Landau level. The plasma dispersion function is evaluated explicitly in the completely degenerate and nondegenerate thermal limits. The perpendicular wave number appears in the arguments of J-functions, which are proportional to generalized Laguerre polynomials, but not in the plasma dispersion function. The result generalizes a known form for the response tensor for parallel propagation (in the completely degenerate case), when the J-functions are either zero or unity, to arbitrary angles of propagation.

  12. Electron beam coal combustion flue gas treatment developments in Poland

    International Nuclear Information System (INIS)

    Chmielewski, A.G.

    1994-01-01

    The research on EB(electron beam) flue gas treatment has started in Poland since 1985. It followed early tests performed in Japan, USA and Germany. The first tests using batch method were carried out in Institute of Atomic Energy. The continuous flow laboratory installation (400 Nm 3 /h) has been constructed in the Institute of Nuclear Chemistry and Technology (INCT) then. This installation containing ILV-6 electron beam accelerator (power 20 kW, energy of electrons 0-2 MeV) is equipped with additional microwaves generator. The eb or eb/mw energy can be applied to treated flue gas. On the basis of laboratory test an industrial pilot plant has been constructed at EPS Kaweczyn near Warsaw. At this plant being the biggest of this kind (20 000 Nm 3 /h) for the first time in industrial conditions multistage irradiation has been applied (two ELW-3 accelerators 50 kW each, energy of electrons 600-800 keV). High efficiency of SO 2 and NO x simultaneous removal, usable product (fertilizer), lower (in comparison with conventional technologies - FGD/SCR) investment and operational costs are the main advantages which have led to decision about starting demonstration industrial project. Feasibility study has been prepared for EPS Pomorzany, Szczecin, Poland. The plant planned will treat flue gases from power/heat generation block (2 Benson type boilers 56 MW e plus 40 MW th each). To meet Polish limits of 1997 half of flue gases will be treated with removal efficiency of 90% for SO 2 and 70% for NO x . Total flow rate will be equal to 270 000 Nm 3 /h. (author)

  13. Engineering charge transport by heterostructuring solution-processed semiconductors

    Science.gov (United States)

    Voznyy, Oleksandr; Sutherland, Brandon R.; Ip, Alexander H.; Zhitomirsky, David; Sargent, Edward H.

    2017-06-01

    Solution-processed semiconductor devices are increasingly exploiting heterostructuring — an approach in which two or more materials with different energy landscapes are integrated into a composite system. Heterostructured materials offer an additional degree of freedom to control charge transport and recombination for more efficient optoelectronic devices. By exploiting energetic asymmetry, rationally engineered heterostructured materials can overcome weaknesses, augment strengths and introduce emergent physical phenomena that are otherwise inaccessible to single-material systems. These systems see benefit and application in two distinct branches of charge-carrier manipulation. First, they influence the balance between excitons and free charges to enhance electron extraction in solar cells and photodetectors. Second, they promote radiative recombination by spatially confining electrons and holes, which increases the quantum efficiency of light-emitting diodes. In this Review, we discuss advances in the design and composition of heterostructured materials, consider their implementation in semiconductor devices and examine unexplored paths for future advancement in the field.

  14. Charge amplification and transfer processes in the gas electron multiplier

    International Nuclear Information System (INIS)

    Bachmann, S.; Bressan, A.; Ropelewski, L.; Sauli, F.; Sharma, A.; Moermann, D.

    1999-01-01

    We report the results of systematic investigations on the operating properties of detectors based on the gas electron multiplier (GEM). The dependence of gain and charge collection efficiency on the external fields has been studied in a range of values for the hole diameter and pitch. The collection efficiency of ionization electrons into the multiplier, after an initial increase, reaches a plateau extending to higher values of drift field the larger the GEM voltage and its optical transparency. The effective gain, fraction of electrons collected by an electrode following the multiplier, increases almost linearly with the collection field, until entering a steeper parallel plate multiplication regime. The maximum effective gain attainable increases with the reduction in the hole diameter, stabilizing to a constant value at a diameter approximately corresponding to the foil thickness. Charge transfer properties appear to depend only on ratios of fields outside and within the channels, with no interaction between the external fields. With proper design, GEM detectors can be optimized to satisfy a wide range of experimental requirements: tracking of minimum ionizing particles, good electron collection with small distortions in high magnetic fields, improved multi-track resolution and strong ion feedback suppression in large volume and time-projection chambers

  15. Organic High Electron Mobility Transistors Realized by 2D Electron Gas.

    Science.gov (United States)

    Zhang, Panlong; Wang, Haibo; Yan, Donghang

    2017-09-01

    A key breakthrough in inorganic modern electronics is the energy-band engineering that plays important role to improve device performance or develop novel functional devices. A typical application is high electron mobility transistors (HEMTs), which utilizes 2D electron gas (2DEG) as transport channel and exhibits very high electron mobility over traditional field-effect transistors (FETs). Recently, organic electronics have made very rapid progress and the band transport model is demonstrated to be more suitable for explaining carrier behavior in high-mobility crystalline organic materials. Therefore, there emerges a chance for applying energy-band engineering in organic semiconductors to tailor their optoelectronic properties. Here, the idea of energy-band engineering is introduced and a novel device configuration is constructed, i.e., using quantum well structures as active layers in organic FETs, to realize organic 2DEG. Under the control of gate voltage, electron carriers are accumulated and confined at quantized energy levels, and show efficient 2D transport. The electron mobility is up to 10 cm 2 V -1 s -1 , and the operation mechanisms of organic HEMTs are also argued. Our results demonstrate the validity of tailoring optoelectronic properties of organic semiconductors by energy-band engineering, offering a promising way for the step forward of organic electronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Flue gas cleaning by electron beam technology in 21st

    International Nuclear Information System (INIS)

    Xu Guang; Luo Jingyu; Zhang Ming

    2005-01-01

    China is paying great attention to the pollution caused by flue gases including sulfur oxides, nitrogen oxides, fine particles, and volatile organic compounds (VOC) for the environmental protection and sustainable development of China economy for 21st century. Among several promising processes, applicable to industrial scale, the electron beam (EB) scrubbing process can simultaneously remove SO 2 , NOx, PM-10 (particulate matter 10 μm or less in diameter), VOC and CO 2 from the flue gas is a new high technology combined with radiation chemistry and electron accelerator technique. The EB flue gas purification process consists of the producing ionization in the EB irradiated gases followed by the formation of free radicals and active species which ultimately forming foggy sulfur acid and nitrate acid. These acids react further with added ammonia to form ammonium sulfate and nitrates as by-products, which can be fertilizer usable in agriculture. The next stage for this technology is its optimization for the reduction of electricity energy consumption and an effective collection of by-products. Lastly the investment cost for EB method is shown to be the most economic compared with other competing methods. (S. Ohno)

  17. Polarization-coupled tunable resistive behavior in oxide ferroelectric heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Gruverman, Alexei [Univ. of Nebraska, Lincoln, NE (United States); Tsymbal, Evgeny Y. [Univ. of Nebraska, Lincoln, NE (United States); Eom, Chang-Beom [Univ. of Wisconsin, Madison, WI (United States)

    2017-05-03

    This research focuses on investigation of the physical mechanism of the electrically and mechanically tunable resistive behavior in oxide ferroelectric heterostructures with engineered interfaces realized via a strong coupling of ferroelectric polarization with tunneling electroresistance and metal-insulator (M-I) transitions. This report describes observation of electrically conductive domain walls in semiconducting ferroelectrics, voltage-free control of resistive switching and demonstration of a new mechanism of electrical control of 2D electron gas (2DEG) at oxide interfaces. The research goals are achieved by creating strong synergy between cutting-edge fabrication of epitaxial single-crystalline complex oxides, nanoscale electrical characterization by scanning probe microscopy and theoretical modeling of the observed phenomena. The concept of the ferroelectric devices with electrically and mechanically tunable nonvolatile resistance represents a new paradigm shift in realization of the next-generation of non-volatile memory devices and low-power logic switches.

  18. Development of microstrip gas chambers on substrata with electronic conductivity

    International Nuclear Information System (INIS)

    Bouclier, R.; Garabatos, C.; Manzin, G.; Sauli, F.; Shekhtman, L.; Temmel, T.; Della Mea, G.; Maggioni, G.; Rigato, V.; Logachenko, I.

    1994-01-01

    This paper describes several recent developments on Microstrip Gas Chambers (MSGCs). The authors have studied the operating behavior of the detectors in different gas mixtures; maximum stable gains have been achieved in mixtures of argon and dimethyl-ether (DME) in almost equal proportions. Using detectors manufactured on semi-conducting glass substrates, capable of withstanding very high rates (above 10 6 mm -2 s -1 ), they have demonstrated extended lifetime without gain modifications up to a collected charge of 130 mC cm -1 in clean laboratory operating conditions. They have also verified that relaxing the requirements on cleanness conditions, either in the gas mixing system or in the detector construction, may result in fast aging of the devices under irradiation. As an alternative to the semi-conducting glass, they have developed a novel technique to coat regular glass with a thin lead silicate layer having electron conductivity; a new development consisting in coating already manufactured MSGCs with the thin semi-conducting layer is also described. The preliminary results show an excellent rate capability of this kind of devices, intrinsically simpler to manufacture

  19. Thermal stability of an InAlN/GaN heterostructure grown on silicon by metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Watanabe, Arata, E-mail: a.watanabe.106@nitech.jp; Freedsman, Joseph J.; Urayama, Yuya; Christy, Dennis [Research Center for Nano Devices and Advanced Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan); Egawa, Takashi, E-mail: egawa.takashi@nitech.ac.jp [Research Center for Nano Devices and Advanced Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan); Innovation Center for Multi-Business of Nitride Semiconductors, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan)

    2015-12-21

    The thermal stabilities of metal-organic chemical vapor deposition-grown lattice-matched InAlN/GaN/Si heterostructures have been reported by using slower and faster growth rates for the InAlN barrier layer in particular. The temperature-dependent surface and two-dimensional electron gas (2-DEG) properties of these heterostructures were investigated by means of atomic force microscopy, photoluminescence excitation spectroscopy, and electrical characterization. Even at the annealing temperature of 850 °C, the InAlN layer grown with a slower growth rate exhibited a smooth surface morphology that resulted in excellent 2-DEG properties for the InAlN/GaN heterostructure. As a result, maximum values for the drain current density (I{sub DS,max}) and transconductance (g{sub m,max}) of 1.5 A/mm and 346 mS/mm, respectively, were achieved for the high-electron-mobility transistor (HEMT) fabricated on this heterostructure. The InAlN layer grown with a faster growth rate, however, exhibited degradation of the surface morphology at an annealing temperature of 850 °C, which caused compositional in-homogeneities and impacted the 2-DEG properties of the InAlN/GaN heterostructure. Additionally, an HEMT fabricated on this heterostructure yielded lower I{sub DS,max} and g{sub m,max} values of 1 A/mm and 210 mS/mm, respectively.

  20. 77 FR 10373 - Greenhouse Gas Reporting Program: Electronics Manufacturing: Revisions to Heat Transfer Fluid...

    Science.gov (United States)

    2012-02-22

    ... Greenhouse Gas Reporting Program: Electronics Manufacturing: Revisions to Heat Transfer Fluid Provisions... technical revisions to the electronics manufacturing source category of the Greenhouse Gas Reporting Rule... final rule will also be available through the WWW on the EPA's Greenhouse Gas Reporting Program Web site...

  1. Basic research on flue gas smoke treatment by electron beam

    International Nuclear Information System (INIS)

    Namba, Hideki

    1995-01-01

    Recently, accompanying the increase of the use of fossil fuel, the environment destruction due to the sulfur oxides and nitrogen oxides contained in combustion smoke has become a serious problem. The development of flue gas smoke treatment technology by using electron beam was started in Japan, and attention has been paid worldwide as the promising dry type simultaneous desulfurizing and denitrating process. In this process, by adding ammonia to smoke, and irradiating electron beam on it, ammonium nitrate and ammonium sulfate are formed. As to the reaction mechanism of denitration and desulfurization, radical formation, radical reaction, denitration mechanism, desulfurization mechanism, the particle size distribution of the formed aerosol, the amounts of denitration and desulfurization by electron beam smoke treatment process, the improvement of the denitration efficiency by multi-stage irradiation method and the improvement of the desulfurization rate by low temperature irradiation, and the basic test toward the pilot test are explained. The basic research for putting this system to practical use was carried out jointly by Japan Atomic Energy Research Institute, Chubu Electric Power Co., Inc., and Ebara Seisakusho for standard coal burning smoke in Japan. The verifying test at the pilot plant in Shinnagoya Thermal Power Station was carried out, and it was verified that this process can be used practically for treating coal-burning smoke. (K.I.)

  2. Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure

    International Nuclear Information System (INIS)

    Harmatha, Ladislav; Ľubica, Stuchlíková; Juraj, Racko; Juraj, Marek; Juraj, Pecháček; Peter, Benko; Michal, Nemec; Juraj, Breza

    2014-01-01

    Highlights: • Dependences of CV characteristics of the AlGaN/GaN structure on frequency and temperature variations. • Identification of electrical activity of defects by capacitance DLTS. • Simulating the properties of the GaN/Al 0.2 GaN 0.8 /GaN Schottky heterostructure. - Abstract: The paper presents the results of capacitance measurements on GaN/AlGaN/GaN Schottky heterostructures grown on an Al 2 O 3 substrate by Low-Pressure Metal–Organic Vapour-Phase Epitaxy (LP-MOVPE). Dependences of the capacitance–voltage (CV) characteristics on the frequency of the measuring signal allow analysing the properties of the 2D electron gas (2DEG) at the AlGaN/GaN heterojunction. Exact location of the hetero-interface below the surface (20 nm) was determined from the concentration profile. Temperature variations of the CV curves reveal the influence of bulk defects in GaN and of the traps at the AlGaN/GaN interface. Electrical activity of these defects was characterized by capacitance Deep Level Transient Fourier Spectroscopy (DLTFS). Experimental results of CV measurements were supported by simulating the properties of the GaN/Al 0.2 GaN 0.8 /GaN Schottky heterostructure in dependence on the influence of the concentration of donor-like traps in GaN and of the temperature upon the CV curves

  3. Simultaneous desulfurization and denitrification of flue gas by electron beam

    International Nuclear Information System (INIS)

    Baumann, W.; Jordan, S.; Maetzing, H.; Paur, H.R.; Schikarski, W.; Wiens, H.

    1987-05-01

    The simultaneous desulfurization and denitrification by the irradiation with 300 keV electrons in the presence of stoichiometric amounts of ammonia yields removal efficiencies of more than 90%. NO X -removal efficiencies depend on the absorbed dose, NO X -concentration and NH 3 -stoichiometry. SO 2 -removal proceeds by thermal and radiation induced mechanisms. The efficiency of the SO 2 -removal process is highest for low temperatures and high NH 3 -stoichiometries. By recycling of scrubbed gas into the reaction chamber (multiple irradiation) the efficiency of the process is increased by 50%. The product aerosol has mass median diameters of 2 and NO x removals in the absence of NH 3 are predicted with reasonable accuracy by the computer model. In the presence of NH 3 experimental data show higher SO 2 removal efficiencies than calculated. This is probably due to additional heterogeneous reactions on particles, which are not covered by the computer model. With 119 figs., 86 refs [de

  4. Development of a thick gas electron multiplier for microdosimetry

    International Nuclear Information System (INIS)

    Orchard, G.M.; Chin, K.; Prestwich, W.V.; Waker, A.J.; Byun, S.H.

    2011-01-01

    A new tissue-equivalent proportional counter based on a thick gas electron multiplier (THGEM) was developed and tested for microdosimetry. A systematic test was conducted at the McMaster Accelerator Laboratory to investigate the overall performance of the prototype detector. A mixed neutron-gamma-ray radiation field was generated using the 7 Li(p,n) reaction. The detector was operated at low voltage initially to test the stability and then the relative multiplication gain was measured as a function of the operating high voltage. A drift potential of 100 V and a THGEM bias of 727 V generated a multiplication gain sufficient for the detection of both neutron and gamma-ray radiation. A consistent microdosimetric pattern was observed between the THGEM detector and standard TEPC for microdosimetry.

  5. Industrial plant for electron beam flue gas treatment

    International Nuclear Information System (INIS)

    Chmielewski, A.G.; Iller, E.; Tyminnski, B.; Zimek, Z; Ostapczuk, A.; Licki, J.

    2001-01-01

    The electron beam flue gas treatment technology was invented many years ago. Research on the process has been carried out in Japan, USA, Germany and Poland. However, the recent fidings, based on the experiments performed at pilot plant at Electric Power Station Kaweczyn, led to developments which made process mature just at the dawn of the XXI century. The process is being implemented in the full industrial scale at Electric Power Station Pomorzany (Dolna Odra EPS Group). Other developments are reported in Japan and after Nagoya's pilot plant experiments, an industrial plant has been built in China and another one is constructed in Japan. There are remarkable differences in technological and design solutions applied in all these installations. Developments achieved at EPS Kaweczyn pilot plant and INCT laboratory unit were the basis for the project realized at EPS Pomorzan

  6. Exploration of sensing of nitrogen dioxide and ozone molecules using novel TiO2/Stanene heterostructures employing DFT calculations

    Science.gov (United States)

    Abbasi, Amirali; Sardroodi, Jaber Jahanbin

    2018-06-01

    Based on the density functional theory (DFT) calculations, we explored the sensing capabilities and electronic structures of TiO2/Stanene heterostructures as novel and highly efficient materials for detection of toxic NO2 and O3 molecules in the environment. Studied gas molecules were positioned at different sites and orientations towards the nanocomposite, and the adsorption process was examined based on the most stable structures. We found that both of these molecules are chemically adsorbed on the TiO2/Stanene heterostructures. The calculations of the adsorption energy indicate that the fivefold coordinated titanium sites of the TiO2/Stanene are the most stable sites for the adsorption of NO2 and O3 molecules. The side oxygen atoms of the gas molecules were found to be chemically bonded to these titanium atoms. The adsorption of gas molecules is an exothermic process, and the adsorption on the pristine nanocomposite is more favorable in energy than that on the nitrogen-doped nanocomposite. The effects of van der Waals interactions were taken into account, which indicate the adsorption energies were increased for the most sable configurations. The gas sensing response and charge transfers were analyzed in detail. The pristine nanocomposites have better sensing response than the doped ones. The spin density distribution plots indicate that the magnetization was mainly located over the adsorbed gas molecules. Mulliken charge analysis reveals that both NO2 and O3 molecules behave as charge acceptors, as evidenced by the accumulation of electronic charges on the adsorbed molecules predicted by charge density difference calculations. Our DFT results provide a theoretical basis for an innovative gas sensor system designed from a sensitive TiO2/Stanene heterostructures for efficient detection of harmful air pollutants such as NO2 and O3.

  7. Voltage control of magnetism in multiferroic heterostructures.

    Science.gov (United States)

    Liu, Ming; Sun, Nian X

    2014-02-28

    Electrical tuning of magnetism is of great fundamental and technical importance for fast, compact and ultra-low power electronic devices. Multiferroics, simultaneously exhibiting ferroelectricity and ferromagnetism, have attracted much interest owing to the capability of controlling magnetism by an electric field through magnetoelectric (ME) coupling. In particular, strong strain-mediated ME interaction observed in layered multiferroic heterostructures makes it practically possible for realizing electrically reconfigurable microwave devices, ultra-low power electronics and magnetoelectric random access memories (MERAMs). In this review, we demonstrate this remarkable E-field manipulation of magnetism in various multiferroic composite systems, aiming at the creation of novel compact, lightweight, energy-efficient and tunable electronic and microwave devices. First of all, tunable microwave devices are demonstrated based on ferrite/ferroelectric and magnetic-metal/ferroelectric composites, showing giant ferromagnetic resonance (FMR) tunability with narrow FMR linewidth. Then, E-field manipulation of magnetoresistance in multiferroic anisotropic magnetoresistance and giant magnetoresistance devices for achieving low-power electronic devices is discussed. Finally, E-field control of exchange-bias and deterministic magnetization switching is demonstrated in exchange-coupled antiferromagnetic/ferromagnetic/ferroelectric multiferroic hetero-structures at room temperature, indicating an important step towards MERAMs. In addition, recent progress in electrically non-volatile tuning of magnetic states is also presented. These tunable multiferroic heterostructures and devices provide great opportunities for next-generation reconfigurable radio frequency/microwave communication systems and radars, spintronics, sensors and memories.

  8. Gas flow counter conversion electron Moessbauer spectroscopy (GFC-CEMS)

    International Nuclear Information System (INIS)

    Williamson, A.; Vijay, Y.K.; Jain, I.P.

    1999-01-01

    Conversion Electron Moessbauer Spectroscopy (CEMS) is well established technique to study surface properties of materials. However non availability of commercial experimental set up and complexity of operational parameters have been restricting the working experimental groups with in the country and abroad. In this paper we have presented the development work for the design of Gas Flow Counter (GFC), e.g. convenient sample mount, grounding, steady flow rate adjustment and minimum He-losses so that the detector operation and installation becomes convenient and dependable. The basic design is modified e.g. large volume to maintain steady gas flow, sample mount close to central wire and O-ring fitted flange. The CEMS spectra are recorded using conventional Moessbauer drive and 57 Co source. The calibrated spectrum shows a detection efficiency of about 20% for natural iron and steel foil. The CEMS spectrum for FeTi bulk and transmission Moessbauer Spectroscopy (TMS) spectrum of FeTi thin film deposited by vacuum evaporation on thin glass substrate were recorded to test the performance of GFC-CEMS. (author)

  9. Cross section determination for the higher ionization of rare gas ions by electron collisions

    International Nuclear Information System (INIS)

    Becker, R.; Frodl, R.; Klein, H.; Schmidt, W.; Clausnitzer, G.; Klinger, H.; Mueller, A.; Salzborn, E.; Fuchs, G.; Viehboeck, F.

    1975-01-01

    The higher ionization of rare gas ions is reported on, which were excited by an electron beam using a crossed-beam technique. A detector for the identification of metastable excited rare gas ions was developed. (WL) [de

  10. Quantum engineering of transistors based on 2D materials heterostructures

    Science.gov (United States)

    Iannaccone, Giuseppe; Bonaccorso, Francesco; Colombo, Luigi; Fiori, Gianluca

    2018-03-01

    Quantum engineering entails atom-by-atom design and fabrication of electronic devices. This innovative technology that unifies materials science and device engineering has been fostered by the recent progress in the fabrication of vertical and lateral heterostructures of two-dimensional materials and by the assessment of the technology potential via computational nanotechnology. But how close are we to the possibility of the practical realization of next-generation atomically thin transistors? In this Perspective, we analyse the outlook and the challenges of quantum-engineered transistors using heterostructures of two-dimensional materials against the benchmark of silicon technology and its foreseeable evolution in terms of potential performance and manufacturability. Transistors based on lateral heterostructures emerge as the most promising option from a performance point of view, even if heterostructure formation and control are in the initial technology development stage.

  11. Quantum engineering of transistors based on 2D materials heterostructures.

    Science.gov (United States)

    Iannaccone, Giuseppe; Bonaccorso, Francesco; Colombo, Luigi; Fiori, Gianluca

    2018-03-01

    Quantum engineering entails atom-by-atom design and fabrication of electronic devices. This innovative technology that unifies materials science and device engineering has been fostered by the recent progress in the fabrication of vertical and lateral heterostructures of two-dimensional materials and by the assessment of the technology potential via computational nanotechnology. But how close are we to the possibility of the practical realization of next-generation atomically thin transistors? In this Perspective, we analyse the outlook and the challenges of quantum-engineered transistors using heterostructures of two-dimensional materials against the benchmark of silicon technology and its foreseeable evolution in terms of potential performance and manufacturability. Transistors based on lateral heterostructures emerge as the most promising option from a performance point of view, even if heterostructure formation and control are in the initial technology development stage.

  12. Effect of heterostructure design on carrier injection and emission characteristics of 295 nm light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Mehnke, Frank, E-mail: mehnke@physik.tu-berlin.de; Kuhn, Christian; Stellmach, Joachim; Rothe, Mark-Antonius; Reich, Christoph; Ledentsov, Nikolay; Pristovsek, Markus; Wernicke, Tim [Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, EW 6-1, 10623 Berlin (Germany); Kolbe, Tim; Lobo-Ploch, Neysha; Rass, Jens [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany); Kneissl, Michael [Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, EW 6-1, 10623 Berlin (Germany); Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

    2015-05-21

    The effects of the heterostructure design on the injection efficiency and external quantum efficiency of ultraviolet (UV)-B light emitting diodes (LEDs) have been investigated. It was found that the functionality of the Al{sub x}Ga{sub 1−x}N:Mg electron blocking layer is strongly influenced by its aluminum mole fraction x and its magnesium doping profile. By comparing LED electroluminescence, quantum well photoluminescence, and simulations of LED heterostructure, we were able to differentiate the contributions of injection efficiency and internal quantum efficiency to the external quantum efficiency of UV LEDs. For the optimized heterostructure using an Al{sub 0.7}Ga{sub 0.3}N:Mg electron blocking layer with a Mg to group III ratio of 4% in the gas phase the electron leakage currents are suppressed without blocking the injection of holes into the multiple quantum well active region. Flip chip mounted LED chips have been processed achieving a maximum output power of 3.5 mW at 290 mA and a peak external quantum efficiency of 0.54% at 30 mA.

  13. Effect of heterostructure design on carrier injection and emission characteristics of 295 nm light emitting diodes

    International Nuclear Information System (INIS)

    Mehnke, Frank; Kuhn, Christian; Stellmach, Joachim; Rothe, Mark-Antonius; Reich, Christoph; Ledentsov, Nikolay; Pristovsek, Markus; Wernicke, Tim; Kolbe, Tim; Lobo-Ploch, Neysha; Rass, Jens; Kneissl, Michael

    2015-01-01

    The effects of the heterostructure design on the injection efficiency and external quantum efficiency of ultraviolet (UV)-B light emitting diodes (LEDs) have been investigated. It was found that the functionality of the Al x Ga 1−x N:Mg electron blocking layer is strongly influenced by its aluminum mole fraction x and its magnesium doping profile. By comparing LED electroluminescence, quantum well photoluminescence, and simulations of LED heterostructure, we were able to differentiate the contributions of injection efficiency and internal quantum efficiency to the external quantum efficiency of UV LEDs. For the optimized heterostructure using an Al 0.7 Ga 0.3 N:Mg electron blocking layer with a Mg to group III ratio of 4% in the gas phase the electron leakage currents are suppressed without blocking the injection of holes into the multiple quantum well active region. Flip chip mounted LED chips have been processed achieving a maximum output power of 3.5 mW at 290 mA and a peak external quantum efficiency of 0.54% at 30 mA

  14. Ultrafast strain engineering in complex oxide heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Popovich, Paul; Caviglia, Andrea; Hu, Wanzheng; Bromberger, Hubertus; Singla, Rashmi; Mitrano, Matteo; Hoffmann, Matthias C.; Kaiser, Stefan; Foerst, Michael [Max-Planck Research Group for Structural Dynamics - Center for Free Electron Laser Science, University of Hamburg (Germany); Scherwitzl, Raoul; Zubko, Pavlo; Gariglio, Sergio; Triscone, Jean-Marc [Departement de Physique de la Matiere Condensee, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneve 4, Geneva (Switzerland); Cavalleri, Andrea [Max-Planck Research Group for Structural Dynamics - Center for Free Electron Laser Science, University of Hamburg (Germany); Department of Physics, Clarendon Laboratory, University of Oxford (United Kingdom)

    2012-07-01

    The mechanical coupling between the substrate and the thin film is expected to be effective on the ultrafast timescale, and could be exploited for the dynamic control of materials properties. Here, we demonstrate that a large-amplitude mid-infrared field, made resonant with a stretching mode of the substrate, can switch the electronic properties of a thin film across an interface. Exploiting dynamic strain propagation between different components of a heterostructure, insulating antiferromagnetic NdNiO{sub 3} is driven through a prompt, five-order-of-magnitude increase of the electrical conductivity, with resonant frequency and susceptibility that is controlled by choice of the substrate material. Vibrational phase control, extended here to a wide class of heterostructures and interfaces, may be conductive to new strategies for electronic phase control at THz repetition rates.

  15. Accumulation of fluorine in CF4 plasma-treated AlGaN/GaN heterostructure interface: An experimental investigation

    International Nuclear Information System (INIS)

    Basu, Anirban; Adesida, Ilesanmi

    2009-01-01

    The impact of CF 4 plasma treatment on the transport properties of the two dimensional electron gas (2DEG) in AlGaN/GaN heterostrustures has been studied. Systematic Hall measurements of the plasma-treated samples show a large degradation in mobility and sheet concentration, which can be partially recovered with short-duration rapid thermal annealing. Further annealing progressively degrades both mobility and sheet concentration. Secondary ion mass spectrometry of the heterostructure reveals accumulation of fluorine at the AlGaN/GaN interface close to the 2DEG channel as a result of annealing. Following our systematic electrical and analytical studies of the behavior of fluorine incorporated into the heterostructure epilayer due to bombardment, a vacancy-mediated postannealing redistribution of fluorine has been proposed

  16. Electronic Nose using Gas Chromatography Column and Quartz Crystal Microbalance

    Directory of Open Access Journals (Sweden)

    Hari Agus Sujono

    2011-08-01

    Full Text Available The conventional electronic nose usually consists of an array of dissimilar chemical sensors such as quartz crystal microbalance (QCM combined with pattern recognition algorithm such as Neural network. Because of parallel processing, the system needs a huge number of sensors and circuits which may emerge complexity and inter-channel crosstalk problems. In this research, a new type of odor identification which combines between gas chromatography (GC and electronic nose methods has been developed. The system consists of a GC column and a 10-MHz quartz crystal microbalance sensor producing a unique pattern for an odor in time domain. This method offers advantages of substantially reduced size, interferences and power consumption in comparison to existing odor identification system. Several odors of organic compounds were introduced to evaluate the selectivity of the system. Principle component analysis method was used to visualize the classification of each odor in two-dimensional space. This system could resolve common organic solvents, including molecules of different classes (aromatic from alcohols as well as those within a particular class (methanol from ethanol and also fuels (premium from pertamax. The neural network can be taught to recognize the odors tested in the experiment with identification rate of 85 %. It is therefore the system may take the place of human nose, especially for poisonous odor evaluations.

  17. Effects of plasma-induced defects on electrical characteristics of AlGaN/GaN heterostructure before and after low-temperature annealing

    International Nuclear Information System (INIS)

    Takimoto, Takuma; Takeshita, Koji; Nakamura, Seiji; Okumura, Tsugunori

    2014-01-01

    We investigated the electrical characteristics of an AlGaN/GaN heterostructure exposed to Ar plasma. In the near-surface region of the AlGaN/GaN heterostructure, we found that plasma-induced defects reduced the two-dimensional electron gas (2DEG) density and mobility at the AlGaN/GaN interface with increasing exposure time. The decrease in 2DEG density suggests that plasma-induced disordering partly extinguishes the piezo-polarization of the AlGaN layer, that the effective Schottky barrier height is increased by the introduction of negatively changed defects, or that the negatively charged defects induced during plasma exposure deactivate or compensate Si donors. In addition, we investigated the postannealing behavior of plasma-induced defects in the AlGaN/GaN heterostructure as well as in the n-GaN layer under an applied bias voltage. - Highlights: • We have investigated the electrical characteristics of the AlGaN/GaN heterostructure. • Electrons under the AlGaN/GaN interface are decreased by plasma exposure. • Post-annealing treatment with gate bias recovers the degradation caused by defects

  18. Current status of electron beam treatment of flue gas in China

    International Nuclear Information System (INIS)

    Wang Zhiguang

    2006-01-01

    Fossil resource especially coal will remain the main energy resource in China over the next 3 ∼4 decades. Pollution of flue gas from fossil power station is one problem being desiderated to solve since 1990's. Electron beam treatment of flue gas as an advanced technique has been developed and used by some institutes and industries in China. The current status of flue gas treatment using electron beam and the development of electron accelerator in China are reviewed. (author)

  19. Dissociative electron attachment to the gas-phase nucleobase hypoxanthine

    Energy Technology Data Exchange (ETDEWEB)

    Dawley, M. Michele [Radiation Laboratory, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Tanzer, Katrin; Denifl, Stephan, E-mail: Stephan.Denifl@uibk.ac.at, E-mail: Sylwia.Ptasinska.1@nd.edu [Institut für Ionenphysik und Angewandte Physik, and Center for Molecular Biosciences Innsbruck (CMBI), Leopold-Franzens Universität Innsbruck, Technikerstr. 25, A-6020 Innsbruck (Austria); Carmichael, Ian [Radiation Laboratory, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Department of Chemistry and Biochemistry, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Ptasińska, Sylwia, E-mail: Stephan.Denifl@uibk.ac.at, E-mail: Sylwia.Ptasinska.1@nd.edu [Radiation Laboratory, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 (United States)

    2015-06-07

    We present high-resolution measurements of the dissociative electron attachment (DEA) to isolated gas-phase hypoxanthine (C{sub 5}H{sub 4}N{sub 4}O, Hyp), a tRNA purine base. The anion mass spectra and individual ion efficiency curves from Hyp were measured as a function of electron energy below 9 eV. The mass spectra at 1 and 6 eV exhibit the highest anion yields, indicating possible common precursor ions that decay into the detectable anionic fragments. The (Hyp − H) anion (C{sub 5}H{sub 3}N{sub 4}O{sup −}) exhibits a sharp resonant peak at 1 eV, which we tentatively assign to a dipole-bound state of the keto-N1H,N9H tautomer in which dehydrogenation occurs at either the N1 or N9 position based upon our quantum chemical computations (B3LYP/6-311+G(d,p) and U(MP2-aug-cc-pVDZ+)) and prior studies with adenine. This closed-shell dehydrogenated anion is the dominant fragment formed upon electron attachment, as with other nucleobases. Seven other anions were also observed including (Hyp − NH){sup −}, C{sub 4}H{sub 3}N{sub 4}{sup −}/C{sub 4}HN{sub 3}O{sup −}, C{sub 4}H{sub 2}N{sub 3}{sup −}, C{sub 3}NO{sup −}/HC(HCN)CN{sup −}, OCN{sup −}, CN{sup −}, and O{sup −}. Most of these anions exhibit broad but weak resonances between 4 and 8 eV similar to many analogous anions from adenine. The DEA to Hyp involves significant fragmentation, which is relevant to understanding radiation damage of biomolecules.

  20. Strong interlayer coupling in phosphorene/graphene van der Waals heterostructure: A first-principles investigation

    Science.gov (United States)

    Hu, Xue-Rong; Zheng, Ji-Ming; Ren, Zhao-Yu

    2018-04-01

    Based on first-principles calculations within the framework of density functional theory, we study the electronic properties of phosphorene/graphene heterostructures. Band gaps with different sizes are observed in the heterostructure, and charges transfer from graphene to phosphorene, causing the Fermi level of the heterostructure to shift downward with respect to the Dirac point of graphene. Significantly, strong coupling between two layers is discovered in the band spectrum even though it has a van der Waals heterostructure. A tight-binding Hamiltonian model is used to reveal that the resonance of the Bloch states between the phosphorene and graphene layers in certain K points combines with the symmetry matching between band states, which explains the reason for the strong coupling in such heterostructures. This work may enhance the understanding of interlayer interaction and composition mechanisms in van der Waals heterostructures consisting of two-dimensional layered nanomaterials, and may indicate potential reference information for nanoelectronic and optoelectronic applications.

  1. Graphene diamond-like carbon films heterostructure

    International Nuclear Information System (INIS)

    Zhao, Fang; Afandi, Abdulkareem; Jackman, Richard B.

    2015-01-01

    A limitation to the potential use of graphene as an electronic material is the lack of control over the 2D materials properties once it is deposited on a supporting substrate. Here, the use of Diamond-like Carbon (DLC) interlayers between the substrate and the graphene is shown to offer the prospect of overcoming this problem. The DLC films used here, more properly known as a-C:H with ∼25% hydrogen content, have been terminated with N or F moieties prior to graphene deposition. It is found that nitrogen terminations lead to an optical band gap shrinkage in the DLC, whilst fluorine groups reduce the DLC's surface energy. CVD monolayer graphene subsequently transferred to DLC, N terminated DLC, and F terminated DLC has then been studied with AFM, Raman and XPS analysis, and correlated with Hall effect measurements that give an insight into the heterostructures electrical properties. The results show that different terminations strongly affect the electronic properties of the graphene heterostructures. G-F-DLC samples were p-type and displayed considerably higher mobility than the other heterostructures, whilst G-N-DLC samples supported higher carrier densities, being almost metallic in character. Since it would be possible to locally pattern the distribution of these differing surface terminations, this work offers the prospect for 2D lateral control of the electronic properties of graphene layers for device applications

  2. Spin Transport in Semiconductor heterostructures

    International Nuclear Information System (INIS)

    Marinescu, Domnita Catalina

    2011-01-01

    The focus of the research performed under this grant has been the investigation of spin transport in magnetic semiconductor heterostructures. The interest in these systems is motivated both by their intriguing physical properties, as the physical embodiment of a spin-polarized Fermi liquid, as well as by their potential applications as spintronics devices. In our work we have analyzed several different problems that affect the spin dynamics in single and bi-layer spin-polarized two-dimensional (2D) systems. The topics of interests ranged from the fundamental aspects of the electron-electron interactions, to collective spin and charge density excitations and spin transport in the presence of the spin-orbit coupling. The common denominator of these subjects is the impact at the macroscopic scale of the spin-dependent electron-electron interaction, which plays a much more subtle role than in unpolarized electron systems. Our calculations of several measurable parameters, such as the excitation frequencies of magneto-plasma modes, the spin mass, and the spin transresistivity, propose realistic theoretical estimates of the opposite-spin many-body effects, in particular opposite-spin correlations, that can be directly connected with experimental measurements.

  3. Collective Behavior of a Spin-Aligned Gas of Interwell Excitons in Double Quantum Wells

    DEFF Research Database (Denmark)

    Larionov, A. V.; Bayer, M.; Hvam, Jørn Märcher

    2005-01-01

    The kinetics of a spin-aligned gas of interwell excitons in GaAs/AlGaAs double quantum wells (n–i–n heterostructure) is studied. The temperature dependence of the spin relaxation time for excitons, in which a photoexcited electron and hole are spatially separated between two adjacent quantum wells...

  4. Electron Gas Dynamic Conductivity Tensor on the Nanotube Surface in Magnetic Field

    Directory of Open Access Journals (Sweden)

    A. M. Ermolaev

    2011-01-01

    Full Text Available Kubo formula was derived for the electron gas conductivity tensor on the nanotube surface in longitudinal magnetic field considering spatial and time dispersion. Components of the degenerate and nondegenerate electron gas conductivity tensor were calculated. The study has showed that under high electron density, the conductivity undergoes oscillations of de Haas-van Alphen and Aharonov-Bohm types with the density of electrons and magnetic field changes.

  5. Dimmable Electronic Ballast for a Gas Discharge Lamp

    Science.gov (United States)

    Raducanu, Marius; Hennings, Brian D.

    2013-01-01

    Titanium dioxide (TiO2) is the most efficient photocatalyst for organic oxidative degradation. TiO2 is effective not only in aqueous solution, but also in nonaqueous solvents and in the gas phase. It is photostable, biologically and chemically inert, and non-toxic. Low-energy UV light (approximately 375 nm, UV-A) can be used to photoactivate TiO2. TiO2 photocatalysis has been used to mineralize most types of organic compounds. Also, TiO2 photocatalysis has been effectively used in sterilization. This effectiveness has been demonstrated by its aggressive destruction of microorganisms, and aggressive oxidation effects of toxins. It also has been used for the oxidation of carbon monoxide to carbon dioxide, and ammonia to nitrogen. Despite having many attractive features, advanced photocatalytic oxidation processes have not been effectively used for air cleaning. One of the limitations of the traditional photocatalytic systems is the ballast that powers (lights) the bulbs. Almost all commercial off-the-shelf (COTS) ballasts are not dimmable and do not contain safety features. COTS ballasts light the UV lamp as bright as the bulb can be lit, and this results in shorter bulb lifetime and maximal power consumption. COTS magnetic ballasts are bulky, heavy, and inefficient. Several iterations of dimmable electronic ballasts have been developed. Some manifestations have safety features such as broken-bulb or over-temperature warnings, replace-bulb alert, logbulb operational hours, etc. Several electronic ballast boards capable of independently lighting and controlling (dimming) four fluorescent (UV light) bulbs were designed, fabricated, and tested. Because of the variation in the market bulb parameters, the ballast boards were designed with a very broad range output. The ballast boards can measure and control the current (power) for each channel.

  6. Resonant spin Hall effect in two dimensional electron gas

    Science.gov (United States)

    Shen, Shun-Qing

    2005-03-01

    Remarkable phenomena have been observed in 2DEG over last two decades, most notably, the discovery of integer and fractional quantum Hall effect. The study of spin transport provides a good opportunity to explore spin physics in two-dimensional electron gas (2DEG) with spin-orbit coupling and other interaction. It is already known that the spin-orbit coupling leads to a zero-field spin splitting, and competes with the Zeeman spin splitting if the system is subjected to a magnetic field perpendicular to the plane of 2DEG. The result can be detected as beating of the Shubnikov-de Haas oscillation. Very recently the speaker and his collaborators studied transport properties of a two-dimensional electron system with Rashba spin-orbit coupling in a perpendicular magnetic field. The spin-orbit coupling competes with the Zeeman splitting to generate additional degeneracies between different Landau levels at certain magnetic fields. It is predicted theoretically that this degeneracy, if occurring at the Fermi level, gives rise to a resonant spin Hall conductance, whose height is divergent as 1/T and whose weight is divergent as -lnT at low temperatures. The charge Hall conductance changes by 2e^2/h instead of e^2/h as the magnetic field changes through the resonant point. The speaker will address the resonance condition, symmetries in the spin-orbit coupling, the singularity of magnetic susceptibility, nonlinear electric field effect, the edge effect and the disorder effect due to impurities. This work was supported by the Research Grants Council of Hong Kong under Grant No.: HKU 7088/01P. *S. Q. Shen, M. Ma, X. C. Xie, and F. C. Zhang, Phys. Rev. Lett. 92, 256603 (2004) *S. Q. Shen, Y. J. Bao, M. Ma, X. C. Xie, and F. C. Zhang, cond-mat/0410169

  7. AlGaAs/GaAs two-dimensional electron gas structures studied by photo reflectance spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Guillen Cervantes, A; Rivera Alvarez, Z; Hernandez, F; Huerta, J. [Instituto Politecnico Nacional, Mexico, D.F. (Mexico); Mendez Garcia, V. H.; Lastras Martinez, A.; Zamora, L.; Saucedo, N. [Universidad Autonoma de San Luis Potosi, San Luis Potosi (Mexico); Melendez Lira, M; Lopez, M [Instituto Politecnico Nacional, Mexico, D.F. (Mexico)

    2001-12-01

    Al{sub x} Ga{sub 1}-x As/GaAs two-dimensional electron gas (2-DEG) heterostructures were fabricated by molecular beam epitaxy in three different laboratories. The samples were characterized by room temperature Photo reflectance (PR) spectroscopy and measurements at 77 K. Internal electric fields were detected by the presence of Franz-Keldysh (FK) oscillations in the PR spectra. >From a FK analysis we obtained the GaAs band-gap energy and the built-in electric field strength in each sample. On the other hand, in the energy region corresponding to Al{sub x} Ga{sub 1}-x As a broad PR signal was registered typical of a highly doped material. Using the third derivative theory we obtained the Al{sub x} Ga{sub 1}-x As band-gap energy, and from this value the Al concentration in the samples. Results showed that the sample with highest electron mobility exhibited the lowest internal electric field strength. [Spanish] Se fabricaron heteroestructuras del tipo Al{sub x} Ga{sub 1}-x As/GaAs con un gas de electrones en dos dimensiones por medio de epitaxia de haces moleculares en tres laboratorios diferentes. Las muestras se caracterizaron por fotorreflectancia (FR) a temperatura ambiente y por mediciones del efecto mayor a 77 K. Campos electricos internos se detectaron por la presencia de oscilaciones Franz-Leldysh (FK) en los espectros de FR. Del analisis de las oscilaciones FK obtuvimos la energia de la brecha prohibida del GaAs y la intensidad del campo electrico interno en cada muestra. Por otra parte, en la region de energia correspondiente al Al{sub x} Ga{sub 1}-x As observamos una senal de FR ancha, tipica de un material altamente impurificado. Usando la teoria de la tercera derivada, obtuvimos el valor de la brecha de energia del Al{sub x}Ga{sub 1}-xAs, y de este valor la concentracion de Al en las muestras. Los resultados mostraron que la estructura con el valor de movilidad electronica mas alto tiene la intensidad de campo electrico interno mas baja.

  8. Electronic and optical properties of HEMT heterostructures with δ-Si doped GaAs/AlGaAs quantum rings — quantum well system

    Science.gov (United States)

    Sibirmovsky, Y. D.; Vasil'evskii, I. S.; Vinichenko, A. N.; Zhigunov, D. M.; Eremin, I. S.; Kolentsova, O. S.; Safonov, D. A.; Kargin, N. I.

    2017-11-01

    Samples of δ-Si doped AlGaAs/GaAs/AlGaAs HEMT heterostructures with GaAs quantum rings (QRs) on top of the quantum well (QW) were grown by molecular beam epitaxy and their properties were compared to the reference samples without QRs. The thickness of the QW was 6 - 10 nm for the samples with QRs and 20 nm for the reference samples. Photoluminescence measurements at low temperatures for all samples show at least two distinct lines in addition to the bulk GaAs line. The Hall effect and low temperature magnetotransport measurements at 4 - 320 K show that conductivity with and without illumination decreases significantly with QRs introduction, however the relative photoconductivity increases. Samples with 6 nm QW are insulating, which could be caused by the strong localization of the charge carriers in the QRs.

  9. Gate length scaling effect on high-electron mobility transistors devices using AlGaN/GaN and AlInN/AlN/GaN heterostructures.

    Science.gov (United States)

    Liao, S Y; Lu, C C; Chang, T; Huang, C F; Cheng, C H; Chang, L B

    2014-08-01

    Compared to AlGaN/GaN HEMT with 0.15 μm T-gate length, the AlInN/AlN/GaN one exhibits much higher current density and transconductance of 1558 mA/mm at Vd = 2 V and 330 mS/mm, respectively. The high extrinsic ft and fmax of 82 GHz and 70 GHz are extracted from AlInN/AlN/GaN HEMT. Besides, we find that the transconductance roll-off is significant in AlGaN/GaN, but largely improved in AlInN/AlN/GaN HEMT, suggesting that the high carrier density and lattice-matched epitaxial heterostructure is important to reach both large RF output power and high operation frequency, especially for an aggressively gate length scaling.

  10. Molecular structure of tetramethylgermane from gas electron diffraction

    Science.gov (United States)

    Csákvári, Éva; Rozsondai, Béla; Hargittai, István

    1991-05-01

    The molecular structure of Ge(CH 3) 4 has been determined from gas-phase electron diffraction augmented by a normal coordinate analysis. Assuming tetrahedral symmetry for the germanium bond configuration, the following structural parameters are found: rg(GeC) = 1.958 ± 0.004 Å, rg(CH) = 1.111 ± 0.003 Å and ∠(GeCH) = 110.7 ± 0.2° ( R=4.0%). The methyl torsional barrier V 0 is estimated to be 1.3 kJ mol -1 on the basis of an effective angle of torsion 23.0 ± 1.5°, from the staggered form, yielded directly by the analysis. The GeC bond length of Ge(CH 3) 4 is the same, within experimental error, as that of Ge(C 6H 5) 4 and is in agreement with the prediction of a modified Schomaker-Stevenson relationship.

  11. Photoionization of the outer electrons in noble gas endohedral atoms

    International Nuclear Information System (INIS)

    Amusia, M. Ya.; Baltenkov, A. S.; Chernysheva, L. V.

    2008-01-01

    We suggest a prominent modification of the outer shell photoionization cross section in noble gas (NG) endohedral atoms NG-C n under the action of the electron shell of fullerene C n . This shell leads to two important effects: a strong enhancement of the cross section due to fullerene shell polarization under the action of the incoming electromagnetic wave and to prominent oscillation of this cross section due to the reflection of a photoelectron from the NG by the fullerene shell. Both factors lead to powerful maxima in the outer shell ionization cross sections of NG-C n , which we call giant endohedral resonances. The oscillator strength reaches a very large value in the atomic scale, 25. We consider atoms of all noble gases except He. The polarization of the fullerene shell is expressed in terms of the total photoabsorption cross section of the fullerene. The photoelectron reflection is taken into account in the framework of the so-called bubble potential, which is a spherical δ-type potential. It is assumed in the derivations that the NG is centrally located in the fullerene. It is also assumed, in accordance with the existing experimental data, that the fullerene radius R C is much larger than the atomic radius r A and the thickness Δ C of the fullerene shell. As was demonstrated recently, these assumptions allow us to represent the NG-C n photoionization cross section as a product of the NG cross section and two well-defined calculated factors

  12. Thermal response in van der Waals heterostructures

    KAUST Repository

    Gandi, Appala

    2016-11-21

    We solve numerically the Boltzmann transport equations of the phonons and electrons to understand the thermoelectric response in heterostructures of M2CO2 (M: Ti, Zr, Hf) MXenes with transition metal dichalcogenide monolayers. Low frequency optical phonons are found to occur as a consequence of the van der Waals bonding, contribute significantly to the thermal transport, and compensate for the reduced contributions of the acoustic phonons (increased scattering cross-sections in heterostructures), such that the thermal conductivities turn out to be similar to those of the bare MXenes. Our results indicate that the important superlattice design approach of thermoelectrics (to reduce the thermal conductivity) may be effective for two-dimensional van der Waals materials when used in conjunction with intercalation. © 2016 IOP Publishing Ltd.

  13. Multiple scattering theory for superconducting heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Ujfalussy, Balazs [Wigner Research Centre for Physics, Budapest (Hungary)

    2016-07-01

    We generalize the screened Korringa-Kohn-Rostoker method for solving the corresponding Kohn-Sham-Bogoliubov-de Gennes equations for surfaces and interfaces. As an application of the theory, we study the quasiparticle spectrum of Au overlayers on a Nb(100) host. We find that within the superconducting gap region, the quasiparticle spectrum consists of Andreev bound states with a dispersion which is closely connected to the underlying electronic structure of the overlayer. We also find that the spectrum has a strongly k-dependent induced gap. The properties of the gap are discussed in relation to the thickness of the overlayer, and it is shown that certain states do not participate in the Andreev scattering process. From the thickness dependence of the gap size we calculate the superconducting critical temperature of Au/Nb(100) heterostructures what we compare with with experiments. Moreover, predictions are made for similar heterostructures of other compounds.

  14. Electron temperature and density measurement of tungsten inert gas arcs with Ar-He shielding gas mixture

    Science.gov (United States)

    Kühn-Kauffeldt, M.; Marques, J.-L.; Forster, G.; Schein, J.

    2013-10-01

    The diagnostics of atmospheric welding plasma is a well-established technology. In most cases the measurements are limited to processes using pure shielding gas. However in many applications shielding gas is a mixture of various components including metal vapor in gas metal arc welding (GMAW). Shielding gas mixtures are intentionally used for tungsten inert gas (TIG) welding in order to improve the welding performance. For example adding Helium to Argon shielding gas allows the weld geometry and porosity to be influenced. Yet thermal plasmas produced with gas mixtures or metal vapor still require further experimental investigation. In this work coherent Thomson scattering is used to measure electron temperature and density in these plasmas, since this technique allows independent measurements of electron and ion temperature. Here thermal plasmas generated by a TIG process with 50% Argon and 50% Helium shielding gas mixture have been investigated. Electron temperature and density measured by coherent Thomson scattering have been compared to the results of spectroscopic measurements of the plasma density using Stark broadening of the 696.5 nm Argon spectral line. Further investigations of MIG processes using Thomson scattering technique are planned.

  15. Electron temperature and density measurement of tungsten inert gas arcs with Ar-He shielding gas mixture

    International Nuclear Information System (INIS)

    Kühn-Kauffeldt, M; Marques, J-L; Forster, G; Schein, J

    2013-01-01

    The diagnostics of atmospheric welding plasma is a well-established technology. In most cases the measurements are limited to processes using pure shielding gas. However in many applications shielding gas is a mixture of various components including metal vapor in gas metal arc welding (GMAW). Shielding gas mixtures are intentionally used for tungsten inert gas (TIG) welding in order to improve the welding performance. For example adding Helium to Argon shielding gas allows the weld geometry and porosity to be influenced. Yet thermal plasmas produced with gas mixtures or metal vapor still require further experimental investigation. In this work coherent Thomson scattering is used to measure electron temperature and density in these plasmas, since this technique allows independent measurements of electron and ion temperature. Here thermal plasmas generated by a TIG process with 50% Argon and 50% Helium shielding gas mixture have been investigated. Electron temperature and density measured by coherent Thomson scattering have been compared to the results of spectroscopic measurements of the plasma density using Stark broadening of the 696.5 nm Argon spectral line. Further investigations of MIG processes using Thomson scattering technique are planned

  16. Charge transport, interfacial interactions and synergistic mechanisms in BiNbO4/MWO4 (M = Zn and Cd) heterostructures for hydrogen production: insights from a DFT+U study

    CSIR Research Space (South Africa)

    Opoku, F

    2017-10-01

    Full Text Available the heterostructures useful in hydrogen production. The relatively low ionisation energy and electron affinity for the heterostructures compared to the monolayers make them ideal for photocatalysis applications due to their small energy barrier for the injection...

  17. Determination of interfacial states in solid heterostructures using a variable-energy positron beam

    Science.gov (United States)

    Asoka kumar, Palakkal P. V.; Lynn, Kelvin G.

    1993-01-01

    A method and means is provided for characterizing interfacial electron states in solid heterostructures using a variable energy positron beam to probe the solid heterostructure. The method includes the steps of directing a positron beam having a selected energy level at a point on the solid heterostructure so that the positron beam penetrates into the solid heterostructure and causes positrons to collide with the electrons at an interface of the solid heterostructure. The number and energy of gamma rays emitted from the solid heterostructure as a result of the annihilation of positrons with electrons at the interface are detected. The data is quantified as a function of the Doppler broadening of the photopeak about the 511 keV line created by the annihilation of the positrons and electrons at the interface, preferably, as an S-parameter function; and a normalized S-parameter function of the data is obtained. The function of data obtained is compared with a corresponding function of the Doppler broadening of the annihilation photopeak about 511 keV for a positron beam having a second energy level directed at the same material making up a portion of the solid heterostructure. The comparison of these functions facilitates characterization of the interfacial states of electrons in the solid heterostructure at points corresponding to the penetration of positrons having the particular energy levels into the interface of the solid heterostructure. Accordingly, the invention provides a variable-energy non-destructive probe of solid heterostructures, such as SiO.sub.2 /Si, MOS or other semiconductor devices.

  18. In-plane heterostructures of Sb/Bi with high carrier mobility

    Science.gov (United States)

    Zhao, Pei; Wei, Wei; Sun, Qilong; Yu, Lin; Huang, Baibiao; Dai, Ying

    2017-06-01

    In-plane two-dimensional (2D) heterostructures have been attracting public attention due to their distinctive properties. However, the pristine materials that can form in-plane heterostructures are reported only for graphene, hexagonal BN, transition-metal dichalcogenides. It will be of great significance to explore more suitable 2D materials for constructing such ingenious heterostructures. Here, we demonstrate two types of novel seamless in-plane heterostructures combined by pristine Sb and Bi monolayers by means of first-principle approach based on density functional theory. Our results indicate that external strain can serve as an effective strategy for bandgap engineering, and the transition from semiconductor to metal occurs when a compressive strain of -8% is applied. In addition, the designed heterostructures possess direct band gaps with high carrier mobility (˜4000 cm2 V-1 s-1). And the mobility of electrons and holes have huge disparity along the direction perpendicular to the interface of Sb/Bi in-plane heterostructures. It is favorable for carriers to separate spatially. Finally, we find that the band edge positions of Sb/Bi in-plane heterostructures can meet the reduction potential of hydrogen generation in photocatalysis. Our results not only offer alternative materials to construct versatile in-plane heterostructures, but also highlight the applications of 2D in-plane heterostructures in diverse nanodevices and photocatalysis.

  19. Atomic layer MoS2-graphene van der Waals heterostructure nanomechanical resonators.

    Science.gov (United States)

    Ye, Fan; Lee, Jaesung; Feng, Philip X-L

    2017-11-30

    Heterostructures play significant roles in modern semiconductor devices and micro/nanosystems in a plethora of applications in electronics, optoelectronics, and transducers. While state-of-the-art heterostructures often involve stacks of crystalline epi-layers each down to a few nanometers thick, the intriguing limit would be hetero-atomic-layer structures. Here we report the first experimental demonstration of freestanding van der Waals heterostructures and their functional nanomechanical devices. By stacking single-layer (1L) MoS 2 on top of suspended single-, bi-, tri- and four-layer (1L to 4L) graphene sheets, we realize an array of MoS 2 -graphene heterostructures with varying thickness and size. These heterostructures all exhibit robust nanomechanical resonances in the very high frequency (VHF) band (up to ∼100 MHz). We observe that fundamental-mode resonance frequencies of the heterostructure devices fall between the values of graphene and MoS 2 devices. Quality (Q) factors of heterostructure resonators are lower than those of graphene but comparable to those of MoS 2 devices, suggesting interface damping related to interlayer interactions in the van der Waals heterostructures. This study validates suspended atomic layer heterostructures as an effective device platform and provides opportunities for exploiting mechanically coupled effects and interlayer interactions in such devices.

  20. Investigations of surface related electronic properties in SmB6 and LaAlO3/SrTiO3 heterostructures

    Science.gov (United States)

    Adhikari, Sanjay

    This dissertation reports research performed on two types of two-dimensional. systems: SmB6 and LaAlO3/SrTiO3 (LAO/STO). SmB6 has been proposed to be. a topological Kondo insulator at low temperature. In order to understand carriers/. lattice dynamics and their interactions, femtosecond pump-probe spectroscopy. is performed in SmB6 single crystals and thin lms at variable temperatures. The. collective oscillation modes in GHz - THz and the change of carrier relaxations is. observed as a function of temperature. From the temperature dependent results. f 􀀀?d hybridization, opening of the hybridization gap, phonon bottleneck", and th. possible topological surface state formation is revealed. The topological surface state. should support helical Dirac dispersion with momentum-spin lockage. This dissertation. reports on current injection in SmB6 thin lm with circularly polarized light. at oblique incidence. This spin polarized photocurrent is concluded to be a direct. result of spin momentum lockage in SmB6. LAO/STO interface shows 2-dimensional electron gas (2DEG) at the interface. when the thickness of LAO is more than 3 unit cell. Carrier properties at the. LAO/STO interfaces are highly sensitive to the top surface termination of LAO. The spontaneous dissociation of water on LAO surface is systematically studied by. density functional theory and experimental surface characterizations. Extrinsic effects. from surface adsorbates were often ignored in the previous studies of the 2DEG. From the experiments, it is found that the dissociated water molecules, especially the. surface protons, strongly aect the interface density of states, electron distributions. and lattice distortions. The investigations also reveal the importance of additional. molecular water layers. These additional water layers, through hydrogen bonds, provide. an energetically feasible pathway for manipulating the surface-bonded protons. and thus, the interface electrical characteristics.

  1. Spin transport properties of partially edge-hydrogenated MoS2 nanoribbon heterostructure

    International Nuclear Information System (INIS)

    Peng, Li; Yao, Kailun; Zhu, Sicong; Ni, Yun; Zu, Fengxia; Wang, Shuling; Guo, Bin; Tian, Yong

    2014-01-01

    We report ab initio calculations of electronic transport properties of heterostructure based on MoS 2 nanoribbons. The heterostructure consists of edge hydrogen-passivated and non-passivated zigzag MoS 2 nanoribbons (ZMoS 2 NR-H/ZMoS 2 NR). Our calculations show that the heterostructure has half-metallic behavior which is independent of the nanoribbon width. The opening of spin channels of the heterostructure depends on the matching of particular electronic orbitals in the Mo-dominated edges of ZMoS 2 NR-H and ZMoS 2 NR. Perfect spin filter effect appears at small bias voltages, and large negative differential resistance and rectifying effects are also observed in the heterostructure.

  2. Ultrafast electronic relaxation of excited state vitamin B12 in the gas phase

    International Nuclear Information System (INIS)

    Shafizadeh, Niloufar; Poisson, Lionel; Soep, Benoit

    2008-01-01

    The time evolution of electronically excited vitamin B 12 (cyanocobalamin) has been observed for the first time in the gas phase. It reveals an ultrafast decay to a state corresponding to metal excitation. This decay is interpreted as resulting from a ring to metal electron transfer. This opens the observation of the excited state of other complex biomimetic systems in the gas phase, the key to the characterisation of their complex evolution through excited electronic states

  3. First-principles approach for superconducting slabs and heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Csire, Gabor [Wigner Research Centre for Physics, Budapest (Hungary)

    2016-07-01

    We present a fully ab-initio method to calculate the transition temperature for superconducting slabs and heterostructures. In the case of thin superconductor layers the electron-phonon interaction may change significantly. Therefore we calculate the layer dependent phonon spectrum to determine the layer dependence of the electron-phonon coupling for such systems. The phonon spectrum is than coupled to the Kohn-Sham-Bogoliubov-de Gennes equation via the McMillan-Hopfield parameter, and it is solved self-consistently. The theory is applied to niobium slabs and niobium-gold heterostructures. Based on these calculations we investigate both the dependence of the superconducting transition temperature on the thickness of superconducting slabs and the inverse proximity effect observed in thin superconducting heterostructures.

  4. Simulation of electron beam formation and transport in a gas-filled electron-optical system with a plasma emitter

    Energy Technology Data Exchange (ETDEWEB)

    Grishkov, A. A. [Russian Academy of Sciences, Institute of High Current Electronics, Siberian Branch (Russian Federation); Kornilov, S. Yu., E-mail: kornilovsy@gmail.com; Rempe, N. G. [Tomsk State University of Control Systems and Radioelectronics (Russian Federation); Shidlovskiy, S. V. [Tomsk State University (Russian Federation); Shklyaev, V. A. [Russian Academy of Sciences, Institute of High Current Electronics, Siberian Branch (Russian Federation)

    2016-07-15

    The results of computer simulations of the electron-optical system of an electron gun with a plasma emitter are presented. The simulations are performed using the KOBRA3-INP, XOOPIC, and ANSYS codes. The results describe the electron beam formation and transport. The electron trajectories are analyzed. The mechanisms of gas influence on the energy inhomogeneity of the beam and its current in the regions of beam primary formation, acceleration, and transport are described. Recommendations for optimizing the electron-optical system with a plasma emitter are presented.

  5. Feature of flue gas treatment by electron-beam irradiation and details of its development

    International Nuclear Information System (INIS)

    Tokunaga, Okihiro; Suzuki, Nobutake.

    1986-01-01

    The method of flue gas treatment with an electron beam, developed jointly by Japan Atomic Energy Research Institute and Ebara Corporation, is promising as a simple, dry process, not using a catalyst, of the desulfurization and denitration. In the procedure, flue gas is irradiated with an electron beam in the presence of ammonia, so that sulfurous acid gas and nitrogen oxide are converted to ammonium sulfate and ammonium nitrate particles, which are then removed. The method is already demonstrated in the flue gas treatment of an iron ore sintering furnace as pilot test. And further, the pilot tests in coal combustion flue gas treatment are proceeding in the United States and West Germany. For the flue gas treatment method using an electron beam, the mechanisms of desulfurization and denitration, the course taken in its development and the present state of development are described, and also the future outlook and problems. (Mori, K.)

  6. GaN heterostructures for biosensing and radiation detection

    Energy Technology Data Exchange (ETDEWEB)

    Howgate, John D.

    2012-12-11

    In this thesis I show the results from our investigation of the interface between gallium nitride wide bandgap semiconductor heterostructures and (bio)molecular systems on their surfaces for biosensing, bioelectronics, and photoelectric applications, with a large emphasis on the processes arising from high energy ionizing irradiation, including heterostructure photoelectric gain mechanisms. Wide bandgap semiconductors, such as gallium nitride, have received increasing attention as potential components in advanced organic/inorganic hybrid systems. Working to further this topic, we determine a new semiconductor alignment required for low energy photo-induced charge transfer ionization of alkyl chains well below the energy normally required for molecular cleavage, show original results of the influence of binding methods on enzyme functionality in conjunction with a novel electrochemical and environmental control system and demonstrate new possibilities to significantly improve upon pH measurements through the use of high sensitivity devices. Furthermore, based on the extension of this work to support future studies of radiation effects on cell systems, we present a detailed characterization of new simultaneous chemical sensing and ionizing radiation dosimetry using single devices. We found that their pH sensitivity was retained during X-ray irradiation and that the fundamental characteristics can be used to separate the irradiation signal from the pH response without compromising operational stability. These data provide clear indications of the separate response mechanism tied to the presence of a two-dimensional electron gas channel. Here, we found new results exhibiting exceptionally high gains and independence of the well-known persistent photoconductivity for soft X-rays and high energy particles in the ultralow dose-rate regime. This material system provides the capability for high sensitivity and resolution real time monitoring, which is competitive with and

  7. GaN heterostructures for biosensing and radiation detection

    International Nuclear Information System (INIS)

    Howgate, John D.

    2012-01-01

    In this thesis I show the results from our investigation of the interface between gallium nitride wide bandgap semiconductor heterostructures and (bio)molecular systems on their surfaces for biosensing, bioelectronics, and photoelectric applications, with a large emphasis on the processes arising from high energy ionizing irradiation, including heterostructure photoelectric gain mechanisms. Wide bandgap semiconductors, such as gallium nitride, have received increasing attention as potential components in advanced organic/inorganic hybrid systems. Working to further this topic, we determine a new semiconductor alignment required for low energy photo-induced charge transfer ionization of alkyl chains well below the energy normally required for molecular cleavage, show original results of the influence of binding methods on enzyme functionality in conjunction with a novel electrochemical and environmental control system and demonstrate new possibilities to significantly improve upon pH measurements through the use of high sensitivity devices. Furthermore, based on the extension of this work to support future studies of radiation effects on cell systems, we present a detailed characterization of new simultaneous chemical sensing and ionizing radiation dosimetry using single devices. We found that their pH sensitivity was retained during X-ray irradiation and that the fundamental characteristics can be used to separate the irradiation signal from the pH response without compromising operational stability. These data provide clear indications of the separate response mechanism tied to the presence of a two-dimensional electron gas channel. Here, we found new results exhibiting exceptionally high gains and independence of the well-known persistent photoconductivity for soft X-rays and high energy particles in the ultralow dose-rate regime. This material system provides the capability for high sensitivity and resolution real time monitoring, which is competitive with and

  8. Proximity effects in topological insulator heterostructures

    International Nuclear Information System (INIS)

    Li Xiao-Guang; Wu Guang-Fen; Zhang Gu-Feng; Culcer Dimitrie; Zhang Zhen-Yu; Chen Hua

    2013-01-01

    Topological insulators (TIs) are bulk insulators that possess robust helical conducting states along their interfaces with conventional insulators. A tremendous research effort has recently been devoted to Tl-based heterostructures, in which conventional proximity effects give rise to a series of exotic physical phenomena. This paper reviews our recent studies on the potential existence of topological proximity effects at the interface between a topological insulator and a normal insulator or other topologically trivial systems. Using first-principles approaches, we have realized the tunability of the vertical location of the topological helical state via intriguing dual-proximity effects. To further elucidate the control parameters of this effect, we have used the graphene-based heterostructures as prototypical systems to reveal a more complete phase diagram. On the application side of the topological helical states, we have presented a catalysis example, where the topological helical state plays an essential role in facilitating surface reactions by serving as an effective electron bath. These discoveries lay the foundation for accurate manipulation of the real space properties of the topological helical state in TI-based heterostructures and pave the way for realization of the salient functionality of topological insulators in future device applications. (topical review - low-dimensional nanostructures and devices)

  9. Mean free path of electrons in rare gas solids

    International Nuclear Information System (INIS)

    Schwentner, N.

    1976-07-01

    The energy distribution of photoelectrons of solid Ar, Kr and Xe films with thickness between 10 A and 300 A have been measured in the photon energy range 10 eV to 30 eV using the synchrotron radiation of DESY. By varying the photon energy and the film thickness the dependence of the electron-electron scattering length on the electron kinetic energy has been determined. The mean free path for inelastic electron-electron scattering decreases monotonically from values of the order of 1.000 A at the scattering threshold to values between 1 A and 5 A for electron energies 10 eV above threshold. The observed energy dependence can be understood by a simplified bandstructure and a scattering probability described by a product of density of states. The threshold energy for electron-electron scattering lies between twice the energy of the n = 1 excitons and the sum of bandgap and exciton energy. (HK) [de

  10. Performance of AlGaN/GaN Heterostructure Field-Effect Transistors for High-Frequency and High-Power Electronics

    Directory of Open Access Journals (Sweden)

    Peter Kordos

    2005-01-01

    Full Text Available Preparation and properties of GaN-based heterostructure field-effect transistors (HFETs for high-frequency and high-power applications are studied in this work. Performance of unpassivated and SiO2 passivated AlGaN/GaN HFETs, as well as passivated SiO2/AlGaN/GaN MOSHFETs (metal-oxide-semicondutor HFETs is compared. It is found that MOSHFETs exhibit better DC and RF properties than simple HFET counterparts. Deposited SiO2 yielded an increase of the sheet carrier density from 7.6x10^12 cm^-2 to 9.2x10^12 cm^-2 and subsequent increase of the static drain saturation current from 0.75 A/mm to 1.09 A/mm. Small-signal RF characterisation of MOSHFETs showed an extrinsic current gain cut-off frequency fT of 24 GHz and a maximum frequency of oscillation fmax of 40 GHz. These are fully comparable values with state-of-the-art AlGaN/GaN HFETs. Finnaůůy, microwave power measurements confirmed excellent performance of MOSHFETs:the output power measured at 7 GHz is about two-times larger than that of simple unpassived HFET. Thus, a great potential in application of GaN-based MOSHFETs is documented. 

  11. Tunable emergent heterostructures in a prototypical correlated metal

    Science.gov (United States)

    Fobes, D. M.; Zhang, S.; Lin, S.-Z.; Das, Pinaki; Ghimire, N. J.; Bauer, E. D.; Thompson, J. D.; Harriger, L. W.; Ehlers, G.; Podlesnyak, A.; Bewley, R. I.; Sazonov, A.; Hutanu, V.; Ronning, F.; Batista, C. D.; Janoschek, M.

    2018-05-01

    At the interface between two distinct materials, desirable properties, such as superconductivity, can be greatly enhanced1, or entirely new functionalities may emerge2. Similar to in artificially engineered heterostructures, clean functional interfaces alternatively exist in electronically textured bulk materials. Electronic textures emerge spontaneously due to competing atomic-scale interactions3, the control of which would enable a top-down approach for designing tunable intrinsic heterostructures. This is particularly attractive for correlated electron materials, where spontaneous heterostructures strongly affect the interplay between charge and spin degrees of freedom4. Here we report high-resolution neutron spectroscopy on the prototypical strongly correlated metal CeRhIn5, revealing competition between magnetic frustration and easy-axis anisotropy—a well-established mechanism for generating spontaneous superstructures5. Because the observed easy-axis anisotropy is field-induced and anomalously large, it can be controlled efficiently with small magnetic fields. The resulting field-controlled magnetic superstructure is closely tied to the formation of superconducting6 and electronic nematic textures7 in CeRhIn5, suggesting that in situ tunable heterostructures can be realized in correlated electron materials.

  12. Spin polarization of a magnetic electron gas induced by a van Vleck ion

    International Nuclear Information System (INIS)

    Palermo, L.; Silva, X.A. do

    1978-11-01

    The mutual polarization of a magnetic electron gas and a van Vleck ion, interacting via exchange, are theoretically investigated using the double-time Green function method. A pair of equations describing the dynamics of the electron gas and the ion are conveniently decoupled and an analytic expression for the electron gas polarization, which depends on the square of the exchange parameter, is obtained. Besides a RKKY-like term, a new term associated to the process of formation of the magnetic moment of the ion appears [pt

  13. The design of the extraction window of high power electron accelerator used in flue gas desulfurization

    International Nuclear Information System (INIS)

    He Tongqi; Chinese Academy of Sciences, Shanghai; Hu Wei; Sun Guangkui; Shi Weiguo; Li Minxi; Zhang Yutian; Pu Gengqiang

    2007-01-01

    Recently, the pollution caused by industrial exhaust gas, especially, the air pollution and acid rain resulting from the sulfur of exhaust gas, is increasingly drawing people's attention. The flue gas desulfurization by electron beam produced by high-power electron accelerator has the characteristics of high efficiency and non-secondary contamination. As one of the most pivotal part of accelerator, the service lifetime of this extraction window directly effects the stable operation of the device. In this paper, a brief review is given to summarize the advantages, material selecting, structure, replacing, maintaining of the extraction window of high-power electron accelerator developed by SINAP. (authors)

  14. Laterally Stitched Heterostructures of Transition Metal Dichalcogenide: Chemical Vapor Deposition Growth on Lithographically Patterned Area

    KAUST Repository

    Li, Henan; Li, Peng; Huang, Jing Kai; Li, Ming-yang; Yang, Chih-Wen; Shi, Yumeng; Zhang, Xixiang; Li, Lain-Jong

    2016-01-01

    Two-dimensional transition metal dichalcogenides (TMDCs) have shown great promise in electronics and optoelectronics due to their unique electrical and optical properties. Heterostructured TMDC layers such as the laterally stitched TMDCs offer

  15. Chemical changes in carbon Nanotube-Nickel/Nickel Oxide Core/Shell nanoparticle heterostructures treated at high temperatures

    International Nuclear Information System (INIS)

    Chopra, Nitin; McWhinney, Hylton G.; Shi Wenwu

    2011-01-01

    Heterostructures composed of carbon nanotube (CNT) coated with Ni/NiO core/shell nanoparticles (denoted as CNC heterostructures) were synthesized in a wet-chemistry and single-step synthesis route involving direct nucleation of nanoparticles on CNT surface. Two different aspects of CNC heterostructures were studied here. First, it was observed that the nanoparticle coatings were more uniform on the as-produced and non-purified CNTs compared to purified (or acid treated) CNTs. These heterostructures were characterized using electron microscopy, Raman spectroscopy, and energy dispersive spectroscopy. Second, thermal stability of CNC heterostructures was studied by annealing them in N 2 -rich (O 2 -lean) environment between 125 and 750 deg. C for 1 h. A detailed X-ray photoelectron spectroscopy and Raman spectroscopy analysis was performed to evaluate the effects of annealing temperatures on chemical composition, phases, and stability of the heterostructures. It was observed that the CNTs present in the heterostructures completely decomposed and core Ni nanoparticle oxidized significantly between 600 and 750 deg. C. - Research Highlights: → Heterostructures composed of CNTs coated with Ni/NiO core/shell nanoparticles. → Poor nanoparticle coverage on purified CNT surface compared to non-purified CNTs. → CNTs in heterostructures decompose between 600 and 750 deg. C in N 2 -rich atmosphere. → Metallic species in heterostructures were oxidized at higher temperatures.

  16. Study of interface properties in LaAlO3/SrTiO3 heterostructures

    International Nuclear Information System (INIS)

    Thiel, Stefan Patrick

    2009-01-01

    Interface effects, which play a crucial role in semiconductors, are also important in oxides. Over the last years several oxide heterostructures were investigated with interface properties, which are not found in the bulk properties of the constituting materials. An exciting example is the interface between the two oxides Lanthanumaluminate (LAO) and Strontiumtitanate (STO) which was investigated in this work. Both materials are band-insulators, however a conducting layer can form at the interface, a so called quasi-two-dimensional electron gas (q2-DEG). After a brief introduction to this heterostructure the sample-preparation and characterization is described, and subsequently different projects are reported in detail. The investigation of the electronic transport properties as a function of the LAO film thickness revealed a transition from insulating to conducting behavior if the films exceed a critical thickness of 3 unit cells (uc). By electric field effect the conductivity of the interface can be tuned to a large extent. In samples with 3 uc of LAO a metal-insulator-transition can be induced. To be able to investigate defined structures a novel patterning technique was developed in the course of this thesis, which is based on the variation of the thickness of the epitaxial LAO. At 200 mK the q2-DEG condenses into a superconducting ground state. Investigations on bicrystalline samples reveal that the conducting interface is strongly influenced by dislocations in the STO substrate. (orig.)

  17. Electron emission in the Auger neutralization of a spin-polarized He+ ion embedded in a free electron gas

    International Nuclear Information System (INIS)

    Juaristi, J.I.; Alducin, M.; Diez Muino, R.; Roesler, M.

    2005-01-01

    Results are presented for the energy distribution and spin polarization of the electrons excited during the Auger neutralization of a spin polarized He + ion embedded in a paramagnetic free electron gas. The screening of the He + ion is calculated using density functional theory within the local spin density approximation. The Auger rates, the energy distribution and the spin polarization of the excited electrons are obtained using the Fermi golden rule. The transport of the electrons is calculated within the Boltzmann transport equation formalism. The spin-polarization of the initially excited electrons is very high (>70%) and parallel to that of the electron bound to the He + ion. Nevertheless, the emitted electrons show a much lower degree of polarization, mainly in the low energy range, due to the creation of the unpolarized cascade of secondaries in the transport process

  18. Stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy

    Science.gov (United States)

    Agrawal, M.; Ravikiran, L.; Dharmarasu, N.; Radhakrishnan, K.; Karthikeyan, G. S.; Zheng, Y.

    2017-01-01

    The stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy (PA-MBE) has been studied. AlN nucleation layer and GaN layer were grown as a function of III/V ratio. GaN/AlN structure is found to form buried cracks when AlN is grown in the intermediate growth regime(III/V˜1)and GaN is grown under N-rich growth regime (III/VHEMT) heterostructure was demonstrated on 2-inch SiC that showed good two dimensional electron gas (2DEG) properties with a sheet resistance of 480 Ω/sq, mobility of 1280 cm2/V.s and sheet carrier density of 1×1013 cm-2.

  19. Japan’s experience of flue gas treatment by electron beams

    International Nuclear Information System (INIS)

    Machi, S.

    2011-01-01

    The electron beam flue gas treatment technology was invented in Japan in 1970's. The paper presents the outlook of the Japanese activities on the development and present state of EBFGT technology. (author)

  20. Japan’s experience of flue gas treatment by electron beams

    Energy Technology Data Exchange (ETDEWEB)

    Machi, S.

    2011-07-01

    The electron beam flue gas treatment technology was invented in Japan in 1970's. The paper presents the outlook of the Japanese activities on the development and present state of EBFGT technology. (author)

  1. Operation of gas electron multiplier (GEM) with propane gas at low pressure and comparison with tissue-equivalent gas mixtures

    Energy Technology Data Exchange (ETDEWEB)

    De Nardo, L., E-mail: laura.denardo@unipd.it [University of Padova, Physics and Astronomy Department and PD-INFN, via Marzolo 8, I-35131 Padova (Italy); Farahmand, M., E-mail: majid.farahmand@rivm.nl [Centre for Environmental Safety and Security, National Institute for Public Health and the Environment (RIVM), PO Box 1, NL-3720 BA Bilthoven (Netherlands)

    2016-05-21

    A Tissue-Equivalent Proportional Counter (TEPC), based on a single GEM foil of standard geometry, has been tested with pure propane gas at low pressure, in order to simulate a tissue site of about 1 µm equivalent size. In this work, the performance of GEM with propane gas at a pressure of 21 and 28 kPa will be presented. The effective gas gain was measured in various conditions using a {sup 244}Cm alpha source. The dependence of effective gain on the electric field strength along the GEM channel and in the drift and induction region was investigated. A maximum effective gain of about 5×10{sup 3} has been reached. Results obtained in pure propane gas are compared with gas gain measurements in gas mixtures commonly employed in microdosimetry, that is propane and methane based Tissue-Equivalent gas mixtures.

  2. Barrier inhomogeneities at vertically stacked graphene-based heterostructures.

    Science.gov (United States)

    Lin, Yen-Fu; Li, Wenwu; Li, Song-Lin; Xu, Yong; Aparecido-Ferreira, Alex; Komatsu, Katsuyoshi; Sun, Huabin; Nakaharai, Shu; Tsukagoshi, Kazuhito

    2014-01-21

    The integration of graphene and other atomically flat, two-dimensional materials has attracted much interest and been materialized very recently. An in-depth understanding of transport mechanisms in such heterostructures is essential. In this study, vertically stacked graphene-based heterostructure transistors were manufactured to elucidate the mechanism of electron injection at the interface. The temperature dependence of the electrical characteristics was investigated from 300 to 90 K. In a careful analysis of current-voltage characteristics, an unusual decrease in the effective Schottky barrier height and increase in the ideality factor were observed with decreasing temperature. A model of thermionic emission with a Gaussian distribution of barriers was able to precisely interpret the conduction mechanism. Furthermore, mapping of the effective Schottky barrier height is unmasked as a function of temperature and gate voltage. The results offer significant insight for the development of future layer-integration technology based on graphene-based heterostructures.

  3. Progress on flue gas desulfurization and denitration with electron beam irradiation in CAEP

    International Nuclear Information System (INIS)

    Ren Min; Wang Baojian; Yang Ruizhuang; Huang Wenfeng; He Xiaohai; Mao Benjiang

    2005-01-01

    The first pilot plant with electron beam irradiation for desulfurization and denitration of flue gas in China and the experimental results based on the pilot plant are briefly introduced in this paper. The FGD (flue gas desulfurization) demonstration installation designed by CAEP (China Academy of Engineering Physics) in Beijing Jingfeng Thermal Powe Co., Ltd. is recommended. (author)

  4. Cell for studying electron-adsorbed gas interactions; Cellule d'etudes des interactions electron-gaz adsorbe

    Energy Technology Data Exchange (ETDEWEB)

    Golowacz, H; Degras, D A [Commissariat a l' Energie Atomique, 91 - Saclay (France). Centre d' Etudes Nucleaires, Deptartement de Physique des Plasmas et de la Fusion Controlee, Service de Physique Appliquee, Service de Physique des Interractions Electroniques, Section d' Etude des Interactions Gaz-Solides

    1967-07-01

    The geometry and the technology of a cell used for investigations on electron-adsorbed gas interactions are described. The resonance frequencies of the surface ions which are created by the electron impact on the adsorbed gas are predicted by simplified calculations. The experimental data relative to carbon monoxide and neon are in good agreement with these predictions. (authors) [French] Les caracteristiques geometriques et technologiques generales d'une cellule d'etude des interactions entre un faisceau d'electrons et un gaz adsorbe sont donnees. Un calcul simplifie permet de prevoir les frequences de resonance des ions de surface crees par l'impact des electrons sur le gaz adsorbe. Les donnees experimentales sur l'oxyde de carbone et le neon confirment les previsions du calcul. (auteurs)

  5. Giant magnetoelectric effect in pure manganite-manganite heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Paul, Sanjukta; Pankaj, Ravindra; Yarlagadda, Sudhakar; Majumdar, Pinaki; Littlewood, Peter B.

    2017-11-01

    Obtaining strong magnetoelectric couplings in bulk materials and heterostructures is an ongoing challenge. We demonstrate that manganite heterostructures of the form (Insulator) /(LaMnO3)(n)/Interface/(CaMnO3)(n)/(Insulator) show strong multiferroicity in magnetic manganites where ferroelectric polarization is realized by charges leaking from LaMnO3 to CaMnO3 due to repulsion. Here, an effective nearest-neighbor electron-electron (electron-hole) repulsion (attraction) is generated by cooperative electron-phonon interaction. Double exchange, when a particle virtually hops to its unoccupied neighboring site and back, produces magnetic polarons that polarize antiferromagnetic regions. Thus a striking giant magnetoelectric effect ensues when an external electrical field enhances the electron leakage across the interface.

  6. Electron impact ionization of the gas-phase sorbitol

    Science.gov (United States)

    Chernyshova, Irina; Markush, Pavlo; Zavilopulo, Anatoly; Shpenik, Otto

    2015-03-01

    Ionization and dissociative ionization of the sorbitol molecule by electron impact have been studied using two different experimental methods. In the mass range of m/ z = 10-190, the mass spectra of sorbitol were recorded at the ionizing electron energies of 70 and 30 eV. The ion yield curves for the fragment ions have been analyzed and the appearance energies of these ions have been determined. The relative total ionization cross section of the sorbitol molecule was measured using monoenergetic electron beam. Possible fragmentation pathways for the sorbitol molecule were proposed.

  7. Optical studies of polarized-electron-noble-gas collisions

    International Nuclear Information System (INIS)

    Gay, T.I.; Furst, J.E.; Geesmann, H.; Khakoo, M.A.; Madison, D.H.; Wijayaratna, W.M.K.P.; Bartschat, K.

    1992-01-01

    We have measured the Stoke's parameters of light emitted following impact excitation of He and Xe by transversely-polarized electrons. For He, the 2 3 S-3 3 P, 389 nm transition was studied in an effort to systematically develop a highly accurate optical electron polarimeter. The 6 3 P 2 -6 3 D 3 , 882 nm transition in Xe was used to assess the importance of spin-dependent forces on the continuum electron for this target. We attempted (and failed) to made the first optical observations of Mott scattering. (Author)

  8. Nonlocality, Correlations, and Magnetotransport in a Spatially Modulated Two-Dimensional Electron Gas

    Science.gov (United States)

    Raichev, O. E.

    2018-04-01

    It is shown that the classical commensurability phenomena in weakly modulated two-dimensional electron systems is a manifestation of the intrinsic properties of the correlation functions describing a homogeneous electron gas in a magnetic field. The theory demonstrates the importance for consideration of nonlocal response and removes the gap between classical and quantum approaches to magnetotransport in such systems.

  9. In-beam electron spectrometer used in conjunction with a gas-filled recoil separator

    International Nuclear Information System (INIS)

    Kankaanpaeae, H.; Butler, P.A.; Greenlees, P.T.; Bastin, J.E.; Herzberg, R.D.; Humphreys, R.D.; Jones, G.D.; Jones, P.; Julin, R.; Keenan, A.; Kettunen, H.; Leino, M.; Miettinen, L.; Page, T.; Rahkila, P.; Scholey, C.; Uusitalo, J.

    2004-01-01

    The conversion-electron spectrometer SACRED has been redesigned for use in conjunction with the RITU gas-filled recoil separator. The system allows in-beam recoil-decay-tagging (RDT) measurements of internal conversion electrons. The performance of the system using standard sources and in-beam is described

  10. Spin-polarized transport in a two-dimensional electron gas with interdigital-ferromagnetic contacts

    DEFF Research Database (Denmark)

    Hu, C.-M.; Nitta, Junsaku; Jensen, Ane

    2001-01-01

    Ferromagnetic contacts on a high-mobility, two-dimensional electron gas (2DEG) in a narrow gap semiconductor with strong spin-orbit interaction are used to investigate spin-polarized electron transport. We demonstrate the use of magnetized contacts to preferentially inject and detect specific spi...

  11. Numerical study of the generation of runaway electrons in a gas diode with a hot channel

    Energy Technology Data Exchange (ETDEWEB)

    Lisenkov, V. V., E-mail: lisenkov@iep.uran.ru [Institute of Electrophysics UrB RAS, 106 Amundsena St., Ekaterinburg 620012 (Russian Federation); Ural Federal University, 19 Mira St., Ekaterinburg 620002 (Russian Federation); Shklyaev, V. A., E-mail: shklyaev@to.hcei.tsc.ru [Institute of High Current Electronics SD RAS, 2/3 Akademichesky Avenue, 634055 Tomsk (Russian Federation); National Research Tomsk Polytechnic University, 30 Lenin Avenue, 634050 Tomsk (Russian Federation)

    2015-11-15

    A new method for increasing the efficiency of runaway electron beam generation in atmospheric pressure gas media has been suggested and theoretically proved. The method consists of creating a hot region (e.g., a spark channel or a laser plume) with a decreased numerical density of gas molecules (N) near the cathode. In this method, the ratio E/N (E—electric field strength) is increased by decreasing N instead of increasing E, as has been done in the past. The numerical model that is used allows the simultaneous calculation of the formation of a subnanosecond gas discharge and the generation of runaway electrons in gas media. The calculations have demonstrated the possibility of obtaining current pulses of runaway electrons with amplitudes of hundred of amperes and durations of more than 100 ps. The influence of the hot channel geometry on the parameters of the generated beam has been investigated.

  12. Nonequilibrium statistical Zubarev's operator and Green's functions for an inhomogeneous electron gas

    Directory of Open Access Journals (Sweden)

    P.Kostrobii

    2006-01-01

    Full Text Available Nonequilibrium properties of an inhomogeneous electron gas are studied using the method of the nonequilibrium statistical operator by D.N. Zubarev. Generalized transport equations for the mean values of inhomogeneous operators of the electron number density, momentum density, and total energy density for weakly and strongly nonequilibrium states are obtained. We derive a chain of equations for the Green's functions, which connects commutative time-dependent Green's functions "density-density", "momentum-momentum", "enthalpy-enthalpy" with reduced Green's functions of the generalized transport coefficients and with Green's functions for higher order memory kernels in the case of a weakly nonequilibrium spatially inhomogeneous electron gas.

  13. The electron spectrum of UF6 recorded in the gas phase

    Science.gov (United States)

    Mârtensson, N.; Malmquist, P.-Å.; Svensson, S.; Johansson, B.

    1984-06-01

    Gas phase core and valence electron spectra from UF6, excited by AlKα monochromatized x rays, in the binding energy range 0-1000 eV are presented. It is shown that the AlKα excited valence electron spectrum can be used to reassign the highest occupied molecular orbital (HOMO) in UF6. Many-body effects on the core levels are discussed and core level lifetimes are determined. The shift between solid phase and gas phase electron binding energies for core lines is used to discuss the U5 f population in UF6.

  14. Intense ion beam transport in magnetic quadrupoles: Experiments on electron and gas effects

    International Nuclear Information System (INIS)

    Seidl, P.A.; Molvik, A.W.; Bieniosek, F.M.; Cohen, R.H.; Faltens, A.; Friedman, A.; Kireef Covo, M.; Lund, S.M.; Prost, L.; Vay, J-L.

    2004-01-01

    Heavy-ion induction linacs for inertial fusion energy and high-energy density physics have an economic incentive to minimize the clearance between the beam edge and the aperture wall. This increases the risk from electron clouds and gas desorbed from walls. We have measured electron and gas emission from 1 MeV K + incident on surfaces near grazing incidence on the High-Current Experiment (HCX) at LBNL. Electron emission coefficients reach values >100, whereas gas desorption coefficients are near 10 4 . Mitigation techniques are being studied: A bead-blasted rough surface reduces electron emission by a factor of 10 and gas desorption by a factor of 2. We also discuss the results of beam transport (of 0.03-0.18 A K + ) through four pulsed room-temperature magnetic quadrupoles in the HCX at LBNL. Diagnostics are installed on HCX, between and within quadrupole magnets, to measure the beam halo loss, net charge and expelled ions, from which we infer gas density, electron trapping, and the effects of mitigation techniques. A coordinated theory and computational effort has made significant progress towards a self-consistent model of positive-ion beam and electron dynamics. We are beginning to compare experimental and theoretical results

  15. Electron collision cross sections and electron swarm parameters for gas molecules

    International Nuclear Information System (INIS)

    Hayashi, Makoto

    1986-01-01

    Elastic and inelastic electron collision cross sections for molecules which interest in radiation research have been determined from available electron beam and electron swarm data by utilizing the Boltzmann equation and Monte Carlo simulation method. Electron drift velocity data which interest in radiation Pysics have been discussed and some calculated results of electron drift velocity data for CF 4 and CF 4 -inert gases mixtures will be presented. (author)

  16. Synthesis; characterization; and growth mechanism of Au/CdS heterostructured nanoflowers constructed with nanorods

    International Nuclear Information System (INIS)

    Kong Qingcheng; Wu Rong; Feng Xiumei; Ye Cui; Hu Guanqi; Hu Jianqiang; Chen Zhiwu

    2011-01-01

    Research highlights: → Well-defined and flower-shaped Au/CdS heterostructured nanocrystals were for the first time synthesized. → The Au-nanorod-induced hydrothermal strategy was for the first time used to fabricate metal/semiconductor heterostructured nanomaterials. → A preliminary crystal growing mechanism was also proposed for better understanding the growth process of other Au/semiconductor heterostructure nanocrystals. → The route devised here should also be extendable to fabricate other Au/semiconductor heterostructure nanomaterials. - Abstract: Gold/sulfide cadmium (Au/CdS) heterostructured nanocrystals with a flower-like shape were for the first time synthesized through an Au-nanorod-induced hydrothermal method. The Au/CdS nanoflowers possessed the average size of about 350 nm while the nanorods constructing the nanoflowers had the average diameter, length, and aspect ratio of approximately 50 nm, 100 nm, and 2, respectively. Our method suggested that Au-nanorods played a decisive role in the formation of Au/CdS heterostructured nanoflowers, demonstrated by high-resolution transmission electron microscopy (HRTEM), electron diffraction (ED), energy-dispersive X-ray spectroscopy (EDS), and UV-visible absorption spectroscopy measurements. A preliminary experiment model to reveal the Au/CdS growth mechanism was also put forward. The route devised here should be perhaps extendable to fabricate other Au/semiconductor heterostructured nanomaterials, and the Au/CdS nanoflowers may have potential applications in nanodevices, biolabels, and clinical detection and diagnosis.

  17. Electron temperature measurement of tungsten inert gas arcs

    International Nuclear Information System (INIS)

    Tanaka, Manabu; Tashiro, Shinichi

    2008-01-01

    In order to make clear the physical grounds of deviations from LTE (Local Thermodynamic Equilibrium) in the atmospheric helium TIG arcs electron temperature and LTE temperature obtained from electron number density were measured by using of line-profile analysis of the laser scattering method without an assumption of LTE. The experimental results showed that in comparison with the argon TIG arcs, the region where a deviation from LTE occurs tends to expand in higher arc current because the plasma reaches the similar state to LTE within shorter distance from the cathode due to the slower cathode jet velocity

  18. Semiconductor@metal-organic framework core-shell heterostructures: a case of ZnO@ZIF-8 nanorods with selective photoelectrochemical response.

    Science.gov (United States)

    Zhan, Wen-wen; Kuang, Qin; Zhou, Jian-zhang; Kong, Xiang-jian; Xie, Zhao-xiong; Zheng, Lan-sun

    2013-02-06

    Metal-organic frameworks (MOFs) and related material classes are attracting considerable attention for their applications in gas storage/separation as well as catalysis. In contrast, research concerning potential uses in electronic devices (such as sensors) is in its infancy, which might be due to a great challenge in the fabrication of MOFs and semiconductor composites with well-designed structures. In this paper, we proposed a simple self-template strategy to fabricate metal oxide semiconductor@MOF core-shell heterostructures, and successfully obtained freestanding ZnO@ZIF-8 nanorods as well as vertically standing arrays (including nanorod arrays and nanotube arrays). In this synthetic process, ZnO nanorods not only act as the template but also provide Zn(2+) ions for the formation of ZIF-8. In addition, we have demonstrated that solvent composition and reaction temperature are two crucial factors for successfully fabricating well-defined ZnO@ZIF-8 heterostructures. As we expect, the as-prepared ZnO@ZIF-8 nanorod arrays display distinct photoelectrochemical response to hole scavengers with different molecule sizes (e.g., H(2)O(2) and ascorbic acid) owing to the limitation of the aperture of the ZIF-8 shell. Excitingly, such ZnO@ZIF-8 nanorod arrays were successfully applied to the detection of H(2)O(2) in the presence of serous buffer solution. Therefore, it is reasonable to believe that the semiconductor@MOFs heterostructure potentially has promising applications in many electronic devices including sensors.

  19. Ground state of the electron gas by a stochastic method

    International Nuclear Information System (INIS)

    Ceperley, D.M.; Alder, B.J.

    1980-05-01

    An exact stochastic simulation of the Schroedinger equation for charged Bosons and Fermions was used to calculate the correlation energies, to locate the transitions to their respective crystal phases at zero temperature within 10%, and to establish the stability at intermediate densities of a ferromagnetic fluid of electrons

  20. Effects of electron beam irradiation on tin dioxide gas sensors

    Indian Academy of Sciences (India)

    WINTEC

    sensitivity increases more rapidly under high doses of irra- diation than under low doses of irradiation. The electron beam irradiation effects were simulated and the mecha- nism was discussed. Acknowledgements. The authors gratefully acknowledge financial support from the MOST 973 program, grant no. 2006CB705604 ...

  1. Plasma excitation processes in flue gas simulated with Monte Carlo electron dynamics

    Energy Technology Data Exchange (ETDEWEB)

    Tas, M.A.; Veldhuizen, E.M. van; Rutgers, W.R. [Eindhoven University of Technology (Netherlands). Div. of Electrical Energy Systems

    1997-06-07

    The excitation of gas molecules in flue gas by electron impact is calculated with a Monte Carlo (MC) algorithm for electron dynamics in partially ionized gases. The MC algorithm is straightforward for any mixture of molecules for which cross sections are available. Electron drift is simulated in the first case for homogeneous electric fields and in the second case for secondary electrons which are produced by electron-beam irradiation. The electron energy distribution function {epsilon}-bar{sub {theta}}, V-bar{sub d}, {lambda}-bar, the energy branching and the rate of excitation are calculated for standard gas mixtures of Ar-N{sub 2}, O{sub 2} and H{sub 2}O. These fundamental process parameters are needed for the study of reactions to remove NO{sub x} from flue gas. The calculated results indicate that the production of highly excited molecules in the high electric field of a streamer corona discharge has an efficiency similar to that of electron-beam irradiation. (author)

  2. Interlayer coupling effects on Schottky barrier in the arsenene-graphene van der Waals heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Xia, Congxin, E-mail: xiacongxin@htu.edu.cn; Xue, Bin; Wang, Tianxing; Peng, Yuting [Department of Physic, Henan Normal University, Xinxiang 453007 (China); Jia, Yu [School of Physics and Engineering, Zhengzhou University, Zhengzhou 450052 (China)

    2015-11-09

    The electronic characteristics of arsenene-graphene van der Waals (vdW) heterostructures are studied by using first-principles methods. The results show that a linear Dirac-like dispersion relation around the Fermi level can be quite well preserved in the vdW heterostructures. Moreover, the p-type Schottky barrier (0.18 eV) to n-type Schottky barrier (0.31 eV) transition occurs when the interlayer distance increases from 2.8 to 4.5 Å, which indicates that the Schottky barrier can be tuned effectively by the interlayer distance in the vdW heterostructures.

  3. High power electron beam accelerators for gas laser excitation

    International Nuclear Information System (INIS)

    Kelly, J.G.; Martin, T.H.; Halbleib, J.A.

    1976-06-01

    A preliminary parameter investigation has been used to determine a possible design of a high-power, relativistic electron beam, transversely excited laser. Based on considerations of present and developing pulsed power technology, broad area diode physics and projected laser requirements, an exciter is proposed consisting of a Marx generator, pulse shaping transmission lines, radially converging ring diodes and a laser chamber. The accelerator should be able to deliver approximately 20 kJ of electron energy at 1 MeV to the 10 4 cm 2 cylindrical surface of a laser chamber 1 m long and 0.3 m in diameter in 24 ns with very small azimuthal asymmetry and uniform radial deposition

  4. Noise rectifier based on the two-dimensional electron gas

    Energy Technology Data Exchange (ETDEWEB)

    Cheremisin, M. V., E-mail: tcher_max@yahoo.com [Ioffe Physical-Technical Institute (Russian Federation)

    2012-09-15

    The dc voltage observed at low temperatures in a 2D electron sample in the absence of noticeable external excitations [1] is accounted by the Schottky contact rectification of the noise generated in the measuring circuit. The rectified voltage is shown to depend on the asymmetry of the contact pair. The dependence of the rectified voltage on the noise amplitude first follows the trivial quadratic law, then exhibits a nearly linear behavior, and finally, levels off.

  5. Destruction of benzene (VOC) using electron beam radiation in flue gas treatment

    International Nuclear Information System (INIS)

    Mohd Nahar Othman; Mohd Noor Muhd Yunus

    2004-01-01

    In this study, Benzene, one of the volatile organic compounds (VOCs) is used to destruct by electron beam. As we know Benzene is one of the most stable compound and very difficult to break. By using the powerful energy produced by electron beam, the benzene compound can be broken up to form new compounds. The technique used in this experiment is by using static process in a control condition where other gases are not allowed to enter the Tedlar bag or glass jar. The Tedlar Bag and Glass jar are used as media for benzene gas to be irradiated. From the experiment it was found that the Tedlag Bag is more suitable than the glass jar the electron beam can easily penetrate and destroy benzene gas. Nitrogen and Helium gas is used as a cleaning gas. The concentrations of benzene gas used for this study are 100 ppm. (part per million), 1 ppmv, and 1 ppmv each for 32 types of VOC. From the result it can be concluded that the electron beam technique used for destruction of benzene (VOQ is very suitable for the low concentration of benzene, the dose needed for the destruction to reach 85-95% is only between 8-12 kGy. It was also observed that many new compound can be produced when benzene is destruct by electron beam. (Author)

  6. An electrical characterization of a two-dimensional electron gas in GaN/AlGaN on silicon substrates

    International Nuclear Information System (INIS)

    Elhamri, S.; Berney, R.; Mitchel, W.C.; Mitchell, W.D.; Roberts, J.C.; Rajagopal, P.; Gehrke, T.; Piner, E.L.; Linthicum, K.J.

    2004-01-01

    We present results of transport measurements performed on AlGaN/GaN heterostructures grown on silicon substrates. Variable temperature Hall effect measurements revealed that the temperature dependence of the carrier density and mobility were characteristic of a two-dimensional electron gas (2DEG). Carrier densities greater than 1x10 13 cm -2 and Hall mobilities in excess of 1500 cm2/V s were measured at room temperature. Variable field Hall measurements at low temperatures, and in magnetic fields up to 6 T, indicated that conduction is dominated by a single carrier type in these samples. Shubnikov-de Haas (SdH) measurements were also performed, but no oscillations were observed in fields up to 8 T and at temperatures as low as 1.2 K. Illuminating some of the samples with a blue (λ=470 nm) light emitting diode (LED) induced a persistent increase in the carrier density. SdH measurements were repeated and again no oscillations were present following illumination. However, exposing the samples to radiation from an UV (λ=395 nm) LED induced well-defined SdH oscillations in fields as low as 4 T. The observation of SdH oscillations confirmed the presence of a 2DEG in these structures. It is hypothesized that small angle scattering suppressed the oscillations before exposure to UV light. This conclusion is supported by the observed increase in the quantum scattering time, τ q , with the carrier density and the calculated quantum to transport scattering times ratio, τ q /τ c . For instance, in one of the samples the τ q increased by 32% while the τ c changed by only 3% as the carrier density increased; an indication of an increase in the screening of small angle scattering. The absence of SdH oscillations in fields up to 8 T and at temperatures as low as 1.2 K is not unique to AlGaN/GaN on silicon. This behavior was observed in AlGaN/GaN on sapphire and on silicon carbide. SdH oscillations were observed in one AlGaN/GaN on silicon carbide sample following exposure to

  7. Ignition Features of Plasma-Beam Discharge in Gas-Discharge Electron Gun Operation

    Directory of Open Access Journals (Sweden)

    Valery A. Tutyk

    2013-01-01

    Full Text Available The current paper presents the results of experimental researches to determine the mode features of plasma-beam discharge (PBD generation by an electron beam injected by a low-vacuum gasdischarge electron gun (LGEG with the cold cathode and hollow anode on the basis of the high-voltage glow discharge and in the range of helium pressure of P ? 10 ÷ 130 Pa. The PBD boundaries and their dependences on parameters of an electron beam are found. The influence of PBD on parameters of low-vacuum gas-discharge electron gun is revealed. It causes an avalanche increase of electron beam current and burning of plasma-beam discharge in the whole space of the vacuum chamber volume and generation of electromagnetic radiation is revealed. Achieved results will be used for implementation of various vacuum technologies in the medium of reaction gas and generated electromagnetic radiation.

  8. Stability and electronic structure of carbon capsules with superior gas storage properties: A theoretical study

    International Nuclear Information System (INIS)

    Manna, Arun K.; Pati, Swapan K.

    2013-01-01

    Highlights: • Stability and electronic structure of various carbon capsules are studied. • Effects of capsule’s sizes on electronic and optical properties are explored. • Changes in cohesive and formation energy and electronic gap are discussed. • Capsule’s gas storage propensity is addressed using DFT and ab initio MD. • Capsule’s optical absorptions are discussed with and without stored gas molecules. - Abstract: Structures, electronic and optical properties of carbon nanocapsules of varying sizes (length and diameter) are studied using first-principles density functional theory. Based on calculated cohesive energy, formation energy, electronic gap and extent of orbital delocalization, we examine structural stability and changes in low-energy physics of these carbon capsules. We find that both cohesive and formation energy decrease with increase in capsule’s sizes, indicating their greater structural rigidity and favorable formation feasibility. The electronic gap also decreases with increase in capsule’s sizes due to the larger electronic delocalization. The simulated optical absorption spectra show lowering of low-energy peak positions with increase in the capsule’s dimensions, consistent with the reduction in electronic gap. Additionally, we also provide an estimate of gas storage capacity for the larger carbon capsule (C 460 ) considered. We find 7.69 wt.% and 28.08 wt.% storage propensity for hydrogen and carbon dioxide gases, respectively, which clearly suggests their potential use as light storage materials

  9. Exchange energy of inhomogenous electron gas near a metal surface

    International Nuclear Information System (INIS)

    Miglio, L.; Tosi, M.P.; March, N.H.

    1980-12-01

    Using the first-order density matrix of an infinite-barrier model of a metal surface, the exchange energy density can be evaluated exactly as a function of distance z from the barrier. This result is compared with the local approximation -3/4e 2 (3/π)sup(1/3) rhosup(4/3)(z) where rho is the electron density in the model. The local approximation is demonstrated to be quantitatively accurate at all z. The integrated surface exchange energy is given to within 3% by the local theory. (author)

  10. Bimodal wireless sensing with dual-channel wide bandgap heterostructure varactors

    Science.gov (United States)

    Deen, David A.; Osinsky, Andrei; Miller, Ross

    2014-03-01

    A capacitive wireless sensing scheme is developed that utilizes an AlN/GaN-based dual-channel varactor. The dual-channel heterostructure affords two capacitance plateaus within the capacitance-voltage (CV) characteristic, owing to the two parallel two-dimensional electron gases (2DEGs) located at respective AlN/GaN interfaces. The capacitance plateaus are leveraged for the definition of two resonant states of the sensor when implemented in an inductively-coupled resonant LRC network for wireless readout. The physics-based CV model is compared with published experimental results, which serve as a basis for the sensor embodiment. The bimodal resonant sensor is befitting for a broad application space ranging from gas, electrostatic, and piezoelectric sensors to biological and chemical detection.

  11. Bimodal wireless sensing with dual-channel wide bandgap heterostructure varactors

    International Nuclear Information System (INIS)

    Deen, David A.; Osinsky, Andrei; Miller, Ross

    2014-01-01

    A capacitive wireless sensing scheme is developed that utilizes an AlN/GaN-based dual-channel varactor. The dual-channel heterostructure affords two capacitance plateaus within the capacitance-voltage (CV) characteristic, owing to the two parallel two-dimensional electron gases (2DEGs) located at respective AlN/GaN interfaces. The capacitance plateaus are leveraged for the definition of two resonant states of the sensor when implemented in an inductively-coupled resonant LRC network for wireless readout. The physics-based CV model is compared with published experimental results, which serve as a basis for the sensor embodiment. The bimodal resonant sensor is befitting for a broad application space ranging from gas, electrostatic, and piezoelectric sensors to biological and chemical detection

  12. Bimodal wireless sensing with dual-channel wide bandgap heterostructure varactors

    Energy Technology Data Exchange (ETDEWEB)

    Deen, David A.; Osinsky, Andrei; Miller, Ross [Agnitron Technology Incorporated, Eden Prairie, Minnesota 55346 (United States)

    2014-03-03

    A capacitive wireless sensing scheme is developed that utilizes an AlN/GaN-based dual-channel varactor. The dual-channel heterostructure affords two capacitance plateaus within the capacitance-voltage (CV) characteristic, owing to the two parallel two-dimensional electron gases (2DEGs) located at respective AlN/GaN interfaces. The capacitance plateaus are leveraged for the definition of two resonant states of the sensor when implemented in an inductively-coupled resonant LRC network for wireless readout. The physics-based CV model is compared with published experimental results, which serve as a basis for the sensor embodiment. The bimodal resonant sensor is befitting for a broad application space ranging from gas, electrostatic, and piezoelectric sensors to biological and chemical detection.

  13. Infrared spectroscopy of gas-phase clusters using a free-electron laser

    International Nuclear Information System (INIS)

    Heijnsbergen, D. van; Helden, G. von; Meijer, G.

    2002-01-01

    Most clusters produced in the gas phase, especially those containing metals, remain largely uncharaterized, among these are transition metal - carbide, -oxide and -nitride clusters. A method for recording IR spectra of strongly bound gas-phase clusters is presented. It is based on a free-electron laser called Felix, characterized by wide wavelength tuning range, covering almost the full 'molecular finger print' region, high power and fluence which make it suited to excite gas-phase species i.e. gas -phase clusters. Neutral clusters were generated by laser vaporization technique, ions that were created after the interaction with the free-electron laser were analyzed in a flight mass spectrometer. Experiments were run with titanium carbide clusters and their IR spectra given. It was shown that this method is suited to strongly bound clusters with low ionization energies, a condition met for many pure metal clusters and metal compound clusters. (nevyjel)

  14. Studies of some elementary processes involving electrons in the gas phase by pulse-radiolysis microwave-cavity technique

    International Nuclear Information System (INIS)

    Sunagawa, Takeyoshi; Makita, Takeshi; Musasa, Hirofumi; Tatsumi, Yoshitsugu; Shimamori, Hiroshi

    1995-01-01

    The pulse radiolysis-microwave cavity technique has been employed for detection of free electrons in the gas phase. Presented are results of the observation of electron disappearance by attachment to molecules, the electron thermalization (energy loss) processes in the presence of an electron-attaching compound, and the formation of electrons by Penning ionization. (author)

  15. Large Current Modulation and Spin-Dependent Tunneling of Vertical Graphene/MoS$_{2}$ Heterostructures

    OpenAIRE

    Myoung, Nojoon; Seo, Kyungchul; Lee, Seung Joo; Ihm, Gukhyung

    2013-01-01

    Vertical graphene heterostructures have been introduced as an alternative architecture for electronic devices by using quantum tunneling. Here, we present that the current on/off ratio of vertical graphene field-effect transistors is enhanced by using an armchair graphene nanoribbon as an electrode. Moreover, we report spin-dependent tunneling current of the graphene/MoS2 heterostructures. When an atomically thin MoS2 layer sandwiched between graphene electrodes becomes magnetic, Dirac fermio...

  16. Molecular structure determination of cyclootane by ab initio and electron diffraction methods in the gas phase

    OpenAIRE

    De Almeida, Wagner B.

    2000-01-01

    The determination of the molecular structure of molecules is of fundamental importance in chemistry. X-rays and electron diffraction methods constitute in important tools for the elucidation of the molecular structure of systems in the solid state and gas phase, respectively. The use of quantum mechanical molecular orbital ab initio methods offer an alternative for conformational analysis studies. Comparison between theoretical results and those obtained experimentally in the gas phase can ma...

  17. A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors

    Science.gov (United States)

    Fu, Chen; Lin, Zhaojun; Cui, Peng; Lv, Yuanjie; Zhou, Yang; Dai, Gang; Luan, Chongbiao; Liu, Huan; Cheng, Aijie

    2018-01-01

    A new method to determine the two-dimensional electron gas (2DEG) density distribution of the AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) after the Si3N4 passivation process has been presented. Detailed device characteristics were investigated and better transport properties have been observed for the passivated devices. The strain variation and the influence of the surface trapping states were analyzed. By using the polarization Coulomb field (PCF) scattering theory, the 2DEG density after passivation was both quantitively and qualitatively determined, which has been increased by 45% under the access regions and decreased by 2% under the gate region.

  18. Spin-orbit controlled capacitance of a polar heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Steffen, Kevin; Kopp, Thilo [Center for Electronic Correlations and Magnetism, EP VI, Institute of Physics, University of Augsburg, 86135 Augsburg (Germany); Loder, Florian [Center for Electronic Correlations and Magnetism, EP VI and TP III, Institute of Physics, University of Augsburg, 86135 Augsburg (Germany)

    2015-07-01

    Oxide heterostructures with polar films display special electronic properties, such as the electronic reconstruction at their internal interfaces with the formation of two-dimensional metallic states. Moreover, the electrical field from the polar layers is inversion-symmetry breaking and may generate a strong Rashba spin-orbit coupling (RSOC) in the interfacial electronic system. We investigate the capacitance of a heterostructure in which a strong RSOC at a metallic interface is controlled by the electric field of a surface electrode. Such a structure is for example given by a LaAlO{sub 3} film on a SrTiO{sub 3} substrate which is gated by a top electrode. We find that due to a strong RSOC the capacitance can be larger than the classical geometric value.

  19. Use of nonlocal helium microplasma for gas impurities detection by the collisional electron spectroscopy method

    Energy Technology Data Exchange (ETDEWEB)

    Kudryavtsev, Anatoly A., E-mail: akud@ak2138.spb.edu [St. Petersburg State University, 7-9 Universitetskaya nab., 199034 St. Petersburg (Russian Federation); Stefanova, Margarita S.; Pramatarov, Petko M. [Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee blvd., 1784 Sofia (Bulgaria)

    2015-10-15

    The collisional electron spectroscopy (CES) method, which lays the ground for a new field for analytical detection of gas impurities at high pressures, has been verified. The CES method enables the identification of gas impurities in the collisional mode of electron movement, where the advantages of nonlocal formation of the electron energy distribution function (EEDF) are fulfilled. Important features of dc negative glow microplasma and probe method for plasma diagnostics are applied. A new microplasma gas analyzer design is proposed. Admixtures of 0.2% Ar, 0.6% Kr, 0.1% N{sub 2}, and 0.05% CO{sub 2} are used as examples of atomic and molecular impurities to prove the possibility for detecting and identifying their presence in high pressure He plasma (50–250 Torr). The identification of the particles under analysis is made from the measurements of the high energy part of the EEDF, where maxima appear, resulting from the characteristic electrons released in Penning reactions of He metastable atoms with impurity particles. Considerable progress in the development of a novel miniature gas analyzer for chemical sensing in gas phase environments has been made.

  20. Gas Condensates onto a LHC Type Cryogenic Vacuum System Subjected to Electron Cloud

    CERN Multimedia

    Baglin, V

    2004-01-01

    In the Large Hadron Collider (LHC), the gas desorbed via photon stimulated molecular desorption or electron stimulated molecular desorption will be physisorbed onto the beam screen held between 5 and 20 K. Studies of the effects of the electron cloud onto a LHC type cryogenic vacuum chamber have been done with the cold bore experiment (COLDEX) installed in the CERN Super Proton Synchrotron (SPS). Experiments performed with gas condensates such as H2, H2O, CO and CO2 are described. Implications for the LHC design and operation are discussed.

  1. Application of fuzzy logic to determine the odour intensity of model gas mixtures using electronic nose

    Science.gov (United States)

    Szulczyński, Bartosz; Gębicki, Jacek; Namieśnik, Jacek

    2018-01-01

    The paper presents the possibility of application of fuzzy logic to determine the odour intensity of model, ternary gas mixtures (α-pinene, toluene and triethylamine) using electronic nose prototype. The results obtained using fuzzy logic algorithms were compared with the values obtained using multiple linear regression (MLR) model and sensory analysis. As the results of the studies, it was found the electronic nose prototype along with the fuzzy logic pattern recognition system can be successfully used to estimate the odour intensity of tested gas mixtures. The correctness of the results obtained using fuzzy logic was equal to 68%.

  2. Measurements made in the SPS with a rest gas profile monitor by collecting electrons

    International Nuclear Information System (INIS)

    Fischer, C.; Koopman, J.

    2000-01-01

    Measurements have regularly been performed during the 1999 run, using the Rest Gas Monitor installed in the SPS. The exploited signal resulted from electrons produced by ionization of the rest gas during the circulating beam passage. A magnetic field parallel to the electric extraction field was applied to channel the electrons. Proton beam horizontal transverse distributions were recorded during entire SPS acceleration cycles, between 14 GeV/c and 450 GeV/c and for different beam structures and bunch intensities. The influence of several parameters on the measured beam profiles was investigated. Results are presented and analyzed in order to determine the performance that can be expected

  3. Determination of gas temperature in the plasmatron channel according to the known distribution of electronic temperature

    Directory of Open Access Journals (Sweden)

    Gerasimov Alexander V.

    2013-01-01

    Full Text Available An analytical method to calculate the temperature distribution of heavy particles in the channel of the plasma torch on the known distribution of the electronic temperature has been proposed. The results can be useful for a number of model calculations in determining the most effective conditions of gas blowing through the plasma torch with the purpose of heating the heavy component. This approach allows us to understand full details about the heating of cold gas, inpouring the plasma, and to estimate correctly the distribution of the gas temperature inside the channel.

  4. Characterization of InAs/AlSb tunneling double barrier heterostructure by ballistic electron emission microscope with InAs as based electrode

    Czech Academy of Sciences Publication Activity Database

    Vaniš, Jan; Chow, D. H.; Pangrác, Jiří; Šroubek, Filip; McGill, T. C.; Walachová, Jarmila

    2003-01-01

    Roč. 0, č. 3 (2003), s. 986-991 ISSN 1610-1634. [EXMATEC 2002 - International Workshop on Expert Evaluation & Control of Compounds Semiconductor Materials & Technologies /6./. Budapest, 26.05.2002-29.05.2002] R&D Projects: GA AV ČR KSK1010104 Projekt 04/01:4045 Institutional research plan: CEZ:AV0Z2067918 Keywords : field emission electron microscopy * semiconductor quantum wells * spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism

  5. Gas electron multiplier (GEM) operation with tissue-equivalent gases at various pressures

    International Nuclear Information System (INIS)

    Farahmand, M.; Bos, A.J.J.; Eijk, C.W.E. van

    2003-01-01

    We have studied the operation of two different Gas Electron Multiplier (GEM) structures in both methane and propane based Tissue-Equivalent (TE) gases at different pressures varying from 0.1 to 1 atm. This work was motivated to explore the possibility of using a GEM for a new type of Tissue Equivalent Proportional Counter. In methane based TE gas, a maximum safe GEM gain of 1.5x10 3 has been reached while in propane based TE gas this is 6x10 3 . These maxima have been reached at different gas pressures depending on GEM structure and TE gas. Furthermore, we observed a decrease of the GEM gain in time before it becomes stable. Charge up/polarisation effects can explain this

  6. High-efficiency super capacitors based on hetero-structured α-MnO2 nanorods

    International Nuclear Information System (INIS)

    Ghouri, Zafar Khan; Shaheer Akhtar, M.; Zahoor, Awan; Barakat, Nasser A.M.; Han, Weidong; Park, Mira; Pant, Bishweshwar; Saud, Prem Singh; Lee, Cho Hye; Kim, Hak Yong

    2015-01-01

    Highlights: • Hetero-structured α-MnO 2 nanorods are prepared by a facile hydrothermal route. • It is applied as active electrode materials for supercapacitor. • A high specific capacitance of 298 Fg −1 with a superior long term cyclic stability is achieved. • Supercapacitor shows high specific capacitance retention 94% after 1000 cycles. - Abstract: Hetero-structured manganese dioxide nanorods with α phase (α-MnO 2 ) were prepared by a facile hydrothermal route at low temperature. X-ray diffraction, scanning electron microscopy, transmission electron microscopy and nitrogen adsorption–desorption measurements were used to characterize the prepared hetero-structured α-MnO 2 nanorods. Supercapacitive performance of the hetero-structured α-MnO 2 nanomaterials as active electrode material was evaluated by cyclic voltammetry (CV) in alkaline medium. The MnO 2 hetero-structure with 2 × 2 tunnels constructed from double chains of octahedral [MnO 6 ] structure yield a significantly high specific capacitance of 298 Fg −1 at 5 mV s −1 and demonstrated a superior long term cyclic stability, with specific capacitance retention about 94% after 1000 cycles. The superior supercapacitive performance of the hetero-structured α-MnO 2 electrode is due to its high specific surface area and unique hierarchy architecture which facilitate fast electron and ion transport

  7. Ecton processes in the generation of pulsed runaway electron beams in a gas discharge

    Science.gov (United States)

    Mesyats, G. A.

    2017-09-01

    As was shown earlier for pulsed discharges that occur in electric fields rising with extremely high rates (1018 V/(cm s)) during the pulse rise time, the electron current in a vacuum discharge is lower than the current of runaway electrons in an atmospheric air discharge in a 1-cm-long gap. In this paper, this is explained by that the field emission current from cathode microprotrusions in a gas discharge is enhanced due to gas ionization. This hastens the initiation of explosive electron emission, which occurs within 10-11 s at a current density of up to 1010 A/cm2. Thereafter, a first-type cathode spot starts forming. The temperature of the cathode spot decreases due to heat conduction, and the explosive emission current ceases. Thus, the runaway electron current pulse is similar in nature to the ecton phenomenon in a vacuum discharge.

  8. Ground state of a hydrogen ion molecule immersed in an inhomogeneous electron gas

    International Nuclear Information System (INIS)

    Diaz-Valdes, J.; Gutierrez, F.A.; Matamala, A.R.; Denton, C.D.; Vargas, P.; Valdes, J.E.

    2007-01-01

    In this work we have calculated the ground state energy of the hydrogen molecule, H 2 + , immersed in the highly inhomogeneous electron gas around a metallic surface within the local density approximation. The molecule is perturbed by the electron density of a crystalline surface of Au with the internuclear axis parallel to the surface. The surface spatial electron density is calculated through a linearized band structure method (LMTO-DFT). The ground state of the molecule-ion was calculated using the Born-Oppenheimer approximation for a fixed-ion while the screening effects of the inhomogeneous electron gas are depicted by a Thomas-Fermi like electrostatic potential. We found that within our model the molecular ion dissociates at the critical distance of 2.35a.u. from the first atomic layer of the solid

  9. Photonic slab heterostructures based on opals

    Science.gov (United States)

    Palacios-Lidon, Elisa; Galisteo-Lopez, Juan F.; Juarez, Beatriz H.; Lopez, Cefe

    2004-09-01

    In this paper the fabrication of photonic slab heterostructures based on artificial opals is presented. The innovated method combines high-quality thin-films growing of opals and silica infiltration by Chemical Vapor Deposition through a multi-step process. By varying structure parameters, such as lattice constant, sample thickness or refractive index, different heterostructures have been obtained. The optical study of these systems, carried out by reflectance and transmittance measurements, shows that the prepared samples are of high quality further confirmed by Scanning Electron Microscopy micrographs. The proposed novel method for sample preparation allows a high control of the involved structure parameters, giving the possibility of tunning their photonic behavior. Special attention in the optical response of these materials has been addressed to the study of planar defects embedded in opals, due to their importance in different photonic fields and future technological applications. Reflectance and transmission measurements show a sharp resonance due to localized states associated with the presence of planar defects. A detailed study of the defect mode position and its dependance on defect thickness and on the surrounding photonic crystal is presented as well as evidence showing the scalability of the problem. Finally, it is also concluded that the proposed method is cheap and versatile allowing the preparation of opal-based complex structures.

  10. Organic p-n heterostructures and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Kowarik, Stefan [Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Hinderhofer, Alexander; Gerlach, Alexander; Schreiber, Frank [Institut fuer Angewandte Physik, Tuebingen (Germany); Osso, Oriol [MATGAS 2000 A.I.E., Esfera UAB, Barcelona (Spain); Wang, Cheng; Hexemer, Alexander [Advanced Light Source, Berkeley, CA (United States)

    2009-07-01

    For many applications of organic semiconductors two components such as e.g. n and p-type layers are required, and the morphology of such heterostructures is crucial for their performance. Pentacene (PEN) is one of the most promising p-type molecular semiconductors and recently perfluoro-pentacene (PFP) has been identified as a good electron conducting material for complementary circuits with PEN. We use soft and hard X-ray reflectivity measurements, scanning transmission X-ray microscopy (STXM) and atomic force microscopy for structural investigations of PFP-PEN heterostructures. The chemical contrast between PEN and PFP in STXM allows us to determine the lateral length scales of p and n domains in a bilayer. For a superlattice of alternating PFP and PEN layers grown by organic molecular beam deposition, X-ray reflectivity measurements demonstrate good structural order. We find a superlattice reflection that varies strongly when tuning the X-ray energy around the fluorine edge, demonstrating that there are indeed alternating PFP and PEN layers.

  11. Electron beams for power plant flue gas treatment

    International Nuclear Information System (INIS)

    Chmielewski, A.G.

    1998-01-01

    Among the processes in which fuel is used for energy generation coal burning plays leading role. On the other hand combustion of fossil fuels is the biggest source of air pollution. When burning fossil fuel pollutants such as particulate, sulfur oxides, nitrogen oxides, volatile organic compounds and others are emitted. Air pollution caused by these pollutants not only acts directly on environment but by contamination of water and soil leads to their degradation. The advanced technology for simultaneous SO 2 , NO x and VOC removal is discussed in the paper. The technology is based on electron accelerators applications. Many new solutions have been introduced in the new pilot plants which have been operated at coal fired power stations. 98% SO 2 and up to 90% NO x removals were obtained at very moderate energy consumption (for de SO x ). Additional agricultural tests have proven full applicability of byproduct in pure form or as a blending stock for NPK fertilizers. Two full scale industrial plants are being built in China (640 kW accelerators) and Poland (1.2 MW accelerators). These will be the biggest radiation processing units using accelerator technology all over the world

  12. A cold cathode of a gas-discharge electron-ion gun

    International Nuclear Information System (INIS)

    1974-01-01

    A cold cathode of a gas-discharge electron-ion gun is constructed in order to continuously replace the eroded material by feeding a wire or a set of coaxial cylinders in the spot where the ions hit the cathode. In this way, the form of the cathode and the electric-field configuration is preserved which guarantees the conservation of a sharp narrow electron beam profile

  13. Measurements of Plasma Expansion due to Background Gas in the Electron Diffusion Gauge Experiment

    International Nuclear Information System (INIS)

    Morrison, Kyle A.; Paul, Stephen F.; Davidson, Ronald C.

    2003-01-01

    The expansion of pure electron plasmas due to collisions with background neutral gas atoms in the Electron Diffusion Gauge (EDG) experiment device is observed. Measurements of plasma expansion with the new, phosphor-screen density diagnostic suggest that the expansion rates measured previously were observed during the plasma's relaxation to quasi-thermal-equilibrium, making it even more remarkable that they scale classically with pressure. Measurements of the on-axis, parallel plasma temperature evolution support the conclusion

  14. Crystal structure of stacking faults in InGaAs/InAlAs/InAs heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Trunkin, I. N.; Presniakov, M. Yu.; Vasiliev, A. L., E-mail: a.vasiliev56@gmail.com [National Research Centre “Kurchatov Institute” (Russian Federation)

    2017-03-15

    Stacking faults and dislocations in InGaAs/InAlAs/InAs heterostructures have been studied by electron microscopy. The use of different techniques of transmission electron microscopy (primarily, highresolution dark-field scanning transmission electron microscopy) has made it possible to determine the defect structure at the atomic level.

  15. High current table-top setup for femtosecond gas electron diffraction

    Directory of Open Access Journals (Sweden)

    Omid Zandi

    2017-07-01

    Full Text Available We have constructed an experimental setup for gas phase electron diffraction with femtosecond resolution and a high average beam current. While gas electron diffraction has been successful at determining molecular structures, it has been a challenge to reach femtosecond resolution while maintaining sufficient beam current to retrieve structures with high spatial resolution. The main challenges are the Coulomb force that leads to broadening of the electron pulses and the temporal blurring that results from the velocity mismatch between the laser and electron pulses as they traverse the sample. We present here a device that uses pulse compression to overcome the Coulomb broadening and deliver femtosecond electron pulses on a gas target. The velocity mismatch can be compensated using laser pulses with a tilted intensity front to excite the sample. The temporal resolution of the setup was determined with a streak camera to be better than 400 fs for pulses with up to half a million electrons and a kinetic energy of 90 keV. The high charge per pulse, combined with a repetition rate of 5 kHz, results in an average beam current that is between one and two orders of magnitude higher than previously demonstrated.

  16. Electron density and gas density measurements in a millimeter-wave discharge

    Energy Technology Data Exchange (ETDEWEB)

    Schaub, S. C., E-mail: sschaub@mit.edu; Hummelt, J. S.; Guss, W. C.; Shapiro, M. A.; Temkin, R. J. [Plasma Science and Fusion Center, Massachusetts Institute of Technology 167 Albany St., Bldg. NW16, Cambridge, Massachusetts 02139 (United States)

    2016-08-15

    Electron density and neutral gas density have been measured in a non-equilibrium air breakdown plasma using optical emission spectroscopy and two-dimensional laser interferometry, respectively. A plasma was created with a focused high frequency microwave beam in air. Experiments were run with 110 GHz and 124.5 GHz microwaves at powers up to 1.2 MW. Microwave pulses were 3 μs long at 110 GHz and 2.2 μs long at 124.5 GHz. Electron density was measured over a pressure range of 25 to 700 Torr as the input microwave power was varied. Electron density was found to be close to the critical density, where the collisional plasma frequency is equal to the microwave frequency, over the pressure range studied and to vary weakly with input power. Neutral gas density was measured over a pressure range from 150 to 750 Torr at power levels high above the threshold for initiating breakdown. The two-dimensional structure of the neutral gas density was resolved. Intense, localized heating was found to occur hundreds of nanoseconds after visible plasma formed. This heating led to neutral gas density reductions of greater than 80% where peak plasma densities occurred. Spatial structure and temporal dynamics of gas heating at atmospheric pressure were found to agree well with published numerical simulations.

  17. Electron density and gas density measurements in a millimeter-wave discharge

    International Nuclear Information System (INIS)

    Schaub, S. C.; Hummelt, J. S.; Guss, W. C.; Shapiro, M. A.; Temkin, R. J.

    2016-01-01

    Electron density and neutral gas density have been measured in a non-equilibrium air breakdown plasma using optical emission spectroscopy and two-dimensional laser interferometry, respectively. A plasma was created with a focused high frequency microwave beam in air. Experiments were run with 110 GHz and 124.5 GHz microwaves at powers up to 1.2 MW. Microwave pulses were 3 μs long at 110 GHz and 2.2 μs long at 124.5 GHz. Electron density was measured over a pressure range of 25 to 700 Torr as the input microwave power was varied. Electron density was found to be close to the critical density, where the collisional plasma frequency is equal to the microwave frequency, over the pressure range studied and to vary weakly with input power. Neutral gas density was measured over a pressure range from 150 to 750 Torr at power levels high above the threshold for initiating breakdown. The two-dimensional structure of the neutral gas density was resolved. Intense, localized heating was found to occur hundreds of nanoseconds after visible plasma formed. This heating led to neutral gas density reductions of greater than 80% where peak plasma densities occurred. Spatial structure and temporal dynamics of gas heating at atmospheric pressure were found to agree well with published numerical simulations.

  18. Exotic topological insulator states and topological phase transitions in Sb2Se3-Bi2Se3 heterostructures

    KAUST Repository

    Zhang, Qianfan; Zhang, Zhiyong; Zhu, Zhiyong; Schwingenschlö gl, Udo; Cui, Yi

    2012-01-01

    in controlling the electronic properties of semiconductor devices, are interesting for topological insulators. Here, we studied the spatial distribution of the topological state in Sb 2Se 3-Bi 2Se 3 heterostructures by first-principle simulation and discovered

  19. Electron--noble-gas spin-flip scattering at low energy

    International Nuclear Information System (INIS)

    Walker, T.G.; Bonin, K.; Happer, W.

    1987-01-01

    The spin-exchange rates and spin-relaxation rates for thermal electrons colliding with noble-gas atoms are calculated using the orthogonalized-plane-wave approximation and via partial-wave analysis. The two techniques give similar results and are in order-of-magnitude agreement with the experimental rate in Ar

  20. Giant Andreev backscattering and reentrant resistance in a 2- dimensional electron gas coupled to superconductors

    NARCIS (Netherlands)

    den Hartog, Sander; Wees, B.J. van; Nazarov, Yu.V.; Klapwijk, T.M.; Borghs, G.

    1998-01-01

    We have investigated the superconducting-phase modulated reduction in the resistance of a ballistic quantum point contact (QPC) connected via a disordered 2-dimensional electron gas (2DEG) to superconductors. We show that this reduction is caused by coherent Andreev back scattering of holes through

  1. Quantum spin-glass transition in the two-dimensional electron gas

    Indian Academy of Sciences (India)

    Home; Journals; Pramana – Journal of Physics; Volume 58; Issue 2 ... Spin glasses; quantum phase transition; ferromagnetism; electron gas. ... We argue that a quantum transition involving the destruction of the spin-glass order in an applied in-plane magnetic field offers a natural explanation of some features of recent ...

  2. Phase-Dependent Resistance in a Superconductor—Two-Dimensional-Electron-Gas Quasiparticle Interferometer

    NARCIS (Netherlands)

    Dimoulas, A.; Heida, J.P.; Wees, B.J. v.; Klapwijk, T.M.; Graaf, W. v.d.; Borghs, G.

    1995-01-01

    We have investigated the interplay between Josephson coupling and quasiparticle interference effects in the resistance of a two-dimensional electron gas connected to superconducting electrodes with an interrupted ring geometry. By reducing the influence of the Josephson coupling strength at high dc

  3. Identification and measurement of chlorinated organic pesticides in water by electron-capture gas chromatography

    Science.gov (United States)

    Lamar, William L.; Goerlitz, Donald F.; Law, LeRoy M.

    1965-01-01

    Pesticides, in minute quantities, may affect the regimen of streams, and because they may concentrate in sediments, aquatic organisms, and edible aquatic foods, their detection and their measurement in the parts-per-trillion range are considered essential. In 1964 the U.S. Geological Survey at Menlo Park, Calif., began research on methods for monitoring pesticides in water. Two systems were selected--electron-capture gas chromatography and microcoulometric-titration gas chromatography. Studies on these systems are now in progress. This report provides current information on the development and application of an electron-capture gas chromatographic procedure. This method is a convenient and extremely sensitive procedure for the detection and measurement of organic pesticides having high electron affinities, notably the chlorinated organic pesticides. The electron-affinity detector is extremely sensitive to these substances but it is not as sensitive to many other compounds. By this method, the chlorinated organic pesticide may be determined on a sample of convenient size in concentrations as low as the parts-per-trillion range. To insure greater accuracy in the identifications, the pesticides reported were separated and identified by their retention times on two different types of gas chromatographic columns.

  4. Gas-phase synthesis of magnesium nanoparticles : A high-resolution transmission electron microscopy study

    NARCIS (Netherlands)

    Kooi, B.J.; Palasantzas, G.; de Hosson, J.T.M.

    2006-01-01

    Magnesium nanoparticles with size above 10 nm, prepared by gas-phase syntheses, were investigated by high-resolution transmission electron microscopy. The dominant particle shape is a hexagonal prism terminated by Mg(0002) and Mg{1010} facets. Oxidation of Mg yields a MgO shell (similar to 3 nm

  5. Direct Measurement of the Band Structure of a Buried Two-Dimensional Electron Gas

    DEFF Research Database (Denmark)

    Miwa, Jill; Hofmann, Philip; Simmons, Michelle Y.

    2013-01-01

    We directly measure the band structure of a buried two dimensional electron gas (2DEG) using angle resolved photoemission spectroscopy. The buried 2DEG forms 2 nm beneath the surface of p-type silicon, because of a dense delta-type layer of phosphorus n-type dopants which have been placed there...

  6. High-energy electron acceleration in the gas-puff Z-pinch plasma

    Energy Technology Data Exchange (ETDEWEB)

    Takasugi, Keiichi, E-mail: takasugi@phys.cst.nihon-u.ac.jp [Institute of Quantum Science, Nihon University, 1-8 Kanda-Surugadai, Chiyoda, Tokyo 101-8308 (Japan); Miyazaki, Takanori [Institute of Quantum Science, Nihon University, 1-8 Kanda-Surugadai, Chiyoda, Tokyo 101-8308, Japan and Dept. Innovation Systems Eng., Utsunomiya University, 7-1-2 Yoto, Utsunomiya, Tochigi 321-8585 (Japan); Nishio, Mineyuki [Anan National College of Technology, 265 Aoki, Minobayashi, Anan, Tokushima 774-0017 (Japan)

    2014-12-15

    The characteristics of hard x-ray generation were examined in the gas-puff z-pinch experiment. The experiment on reversing the voltage was conducted. In both of the positive and negative discharges, the x-ray was generated only from the anode surface, so it was considered that the electrons were accelerated by the induced electromagnetic force at the pinch time.

  7. Transmission electron microscope examination of rare-gas bubbles in metals: analysis of observed contrast effects

    International Nuclear Information System (INIS)

    Levy, V.

    1964-01-01

    Metallic samples containing rare gas bubbles have been examined by transmission electron microscopy. The different features of the contrast patterns of the bubbles have been explained by the dynamical theory of contrast, assuming that the bubble behaves as a hole in the metal. Experimental results are in good agreement with the theory. (author) [fr

  8. Fireworks in noble gas clusters a first experiment with the new "free-electron laser"

    CERN Document Server

    2002-01-01

    An international group of scientists has published first experiments carried out using the new soft X-ray free-electron laser (FEL) at the research center DESY in Hamburg, Germany. Using small clusters of noble gas atoms, for the first time, researchers studied the interaction of matter with intense X-ray radiation from an FEL on extremely short time scales (1 page).

  9. An analysis of main factors in electron beam flue gas purification

    International Nuclear Information System (INIS)

    Zhang Ming; Xu Guang

    2003-01-01

    Electron beam flue gas purification method is developing very quickly in recent years. Based on the experiment setting for electron beam flue gas purification in Institute of Nuclear Energy and Technology, Tsinghua University, how the technique factors affect the ratio of desulphurization and denitrogenation are described. Radiation dose (D), temperature (T), humidity (H), pour ammonia quantity (α) and initial concentration of SO 2 (C SO 2 ) and NO x (C NO x ) are main factors influencing flue gas purification. Using the methods of correlation analysis and regression analysis, the primary effect factors are found out and the regression equations are set to optimize the system process, predigest the system structure and to forecast the experimental results. (authors)

  10. Electron collection enhancement arising from neutral gas jets on a charged vehicle in the ionosphere

    International Nuclear Information System (INIS)

    Gilchrist, B.E.; Banks, P.M.; Neubert, T.; Williamson, P.R.; Myers, N.B.; Raitt, W.J.; Sasaki, Susumu

    1990-01-01

    Observations of current collection enhancements due to cold nitrogen gas control jet emissions from a highly charged, isolated rocket payload in the ionosphere have been made during the cooperative high altitude rocket gun experiment (CHARGE) 2 using an electrically tethered mother/daughter payload system. The current collection enhancement was observed on a platform (daughter payload) located 100 to 400 m away from the main payload firing an energetic electron beam (mother payload). The authors interpret these results in terms of an electrical discharge forming in close proximity to the daughter vehicle during the short periods of gas emission. The results indicate that it is possible to enhance the electron current collection capability of positively charged vehicles by means of deliberate neutral gas releases into an otherwise undisturbed space plasma. The results are also compared with recent laboratory observations of hollow cathode plasma contactors operating in the ignited mode

  11. Molecular structure determination of cyclooctane by Ab Initio and electron diffraction methods in the gas phase

    International Nuclear Information System (INIS)

    Almeida, Wagner B. de

    2000-01-01

    The determination of the molecular structure of molecules is of fundamental importance in chemistry. X-rays and electron diffraction methods constitute in important tools for the elucidation of the molecular structure of systems in the solid state and gas phase, respectively. The use of quantum mechanical molecular orbital ab initio methods offer an alternative for conformational analysis studies. Comparison between theoretical results and those obtained experimentally in the gas phase can make a significant contribution for an unambiguous determination of the geometrical parameters. In this article the determination for an unambiguous determination of the geometrical parameters. In this article the determination of the molecular structure of the cyclooctane molecule by electron diffraction in the gas phase an initio calculations will be addressed, providing an example of a comparative analysis of theoretical and experimental predictions. (author)

  12. The study of electronic structure and properties of silicene for gas sensor application

    Energy Technology Data Exchange (ETDEWEB)

    Wella, Sasfan A.; Syaputra, Marhamni; Wungu, Triati D. K., E-mail: triati@fi.itb.ac.id; Suprijadi [Department of Physics, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung Jl. Ganesha 10 Bandung 40132, West Java (Indonesia)

    2016-03-11

    In this study, we investigated the adsorption of gas molecules (H{sub 2}S, CO) on pristine silicene using first principles calculation. The structure, electronic properties, and adsorption energy of H{sub 2}S,CO/silicene are discussed thoroughly. We found that the pristine silicenewith low buckling structure is the most stable as compared with planar and high buckling structures. Silicene was able to detect a gas molecule which can be observed according tothe density of states analysis. Though a gas molecule adsorbed weakly, the electronic properties of the low buckling pristine silicene changed from semi-metal (zero band gap) to semiconductor. The adsorption energy of H{sub 2}S and CO on silicene is 0.075 eV and 0.06 eV, respectively.

  13. Low resistivity Pt interconnects developed by electron beam assisted deposition using novel gas injector system

    International Nuclear Information System (INIS)

    Dias, R J; Romano-Rodriguez, A; O'Regan, C; Holmes, J D; Petkov, N; Thrompenaars, P; Mulder, J J L

    2012-01-01

    Electron beam-induced deposition (EBID) is a direct write process where an electron beam locally decomposes a precursor gas leaving behind non-volatile deposits. It is a fast and relatively in-expensive method designed to develop conductive (metal) or isolating (oxide) nanostructures. Unfortunately the EBID process results in deposition of metal nanostructures with relatively high resistivity because the gas precursors employed are hydrocarbon based. We have developed deposition protocols using novel gas-injector system (GIS) with a carbon free Pt precursor. Interconnect type structures were deposited on preformed metal architectures. The obtained structures were analysed by cross-sectional TEM and their electrical properties were analysed ex-situ using four point probe electrical tests. The results suggest that both the structural and electrical characteristics differ significantly from those of Pt interconnects deposited by conventional hydrocarbon based precursors, and show great promise for the development of low resistivity electrical contacts.

  14. Photocatalytic activity of Ag3PO4 nanoparticle/TiO2 nanobelt heterostructures

    Science.gov (United States)

    Liu, Ruoyu; Hu, Peiguang; Chen, Shaowei

    2012-10-01

    Heterostructures based on Ag3PO4 nanoparticles and TiO2 nanobelts were prepared by a coprecipitation method. The crystalline structures were characterized by X-ray diffraction measurements. Electron microscopic studies showed that the Ag3PO4 nanoparticles and TiO2 nanobelts were in intimate contact which might be exploited to facilitate charge transfer between the two semiconductor materials. In fact, the heterostructures exhibited markedly enhanced photocatalytic activity as compared with unmodified TiO2 nanobelts or commercial TiO2 colloids in the photodegradation of methyl orange under UV irradiation. This was accounted for by the improved efficiency of interfacial charge separation thanks to the unique alignments of their band structures. Remarkably, whereas the photocatalytic activity of the heterostructure was comparable to that of Ag3PO4 nanoparticles alone, the heterostructures exhibited significantly better stability and reusability in repeated tests than the Ag3PO4 nanoparticles.

  15. Synthesis, fabrication and characterization of Ge/Si axial nanowire heterostructure tunnel FETs

    Energy Technology Data Exchange (ETDEWEB)

    Picraux, Samuel T [Los Alamos National Laboratory; Dayeh, Shadi A [Los Alamos National Laboratory

    2010-01-01

    Axial Ge/Si heterostructure nanowires allow energy band-edge engineering along the axis of the nanowire, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two advances in the area of heterostructure nanowires and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure nanowires with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these nanowires for high-on currents and suppressed ambipolar behavior. Initial prototype devices resulted in a current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. These results demonstrate the potential of such asymmetric heterostructures (both in the semiconductor channel and metal-semiconductor barrier heights) for low-power and high performance electronics.

  16. Study of interface properties in LaAlO{sub 3}/SrTiO{sub 3} heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Thiel, Stefan Patrick

    2009-02-19

    Interface effects, which play a crucial role in semiconductors, are also important in oxides. Over the last years several oxide heterostructures were investigated with interface properties, which are not found in the bulk properties of the constituting materials. An exciting example is the interface between the two oxides Lanthanumaluminate (LAO) and Strontiumtitanate (STO) which was investigated in this work. Both materials are band-insulators, however a conducting layer can form at the interface, a so called quasi-two-dimensional electron gas (q2-DEG). After a brief introduction to this heterostructure the sample-preparation and characterization is described, and subsequently different projects are reported in detail. The investigation of the electronic transport properties as a function of the LAO film thickness revealed a transition from insulating to conducting behavior if the films exceed a critical thickness of 3 unit cells (uc). By electric field effect the conductivity of the interface can be tuned to a large extent. In samples with 3 uc of LAO a metal-insulator-transition can be induced. To be able to investigate defined structures a novel patterning technique was developed in the course of this thesis, which is based on the variation of the thickness of the epitaxial LAO. At 200 mK the q2-DEG condenses into a superconducting ground state. Investigations on bicrystalline samples reveal that the conducting interface is strongly influenced by dislocations in the STO substrate. (orig.)

  17. Metal-insulator transition in AlxGa1-xAs/GaAs heterostructures with large spacer width

    Science.gov (United States)

    Gold, A.

    1991-10-01

    Analytical results are presented for the mobility of a two-dimensional electron gas in a heterostructure with a thick spacer layer α. Due to multiple-scattering effects a metal-insulator transition occurs at a critical electron density Nc=N1/2i/(4π1/2α) (Ni is the impurity density). The transport mean free path l(t) (calculated in Born approximation) at the metal-insulator transition is l(t)c=2α. A localization criterion in terms of the renormalized single-particle mean free path l(sr) is presented: kFcl(sr)c=(1/2)1/2 (kFc is the Fermi wave number at the critical density). I compare the theoretical results with recent experimental results found in AlxGa1-xAs/GaAs heterostructures with large spacer width: 1200<α<2800 Å. Remote impurity doping and homogeneous background doping are considered. The only fitting parameter used for the theoretical results is the background doping density NB=6×1013 cm-3. My theory is in fair agreement with the experimental results.

  18. Investigations on electron beam flue gas treatment held in the Institute of Nuclear Chemistry and Technology

    International Nuclear Information System (INIS)

    Chmielewski, A.G.; Iller, E.; Zimek, Z.; Licki, J.

    1992-01-01

    Two different research installations have been built. The first one, laboratory unit has a flow capacity of approx. 400 Nm 3 /h of flue gas from two gas fired boilers. The composition of gas can be adjusted. An irradiator, accelerator ILU-6, is used with electron beam energy in the range 600-1000 keV. The unit is mostly used for aerosol formation and filtration research. This laboratory installation is being adapted for electron beam/microwave combined gas molecule excitation. The second unit, a pilot with a plant of flow rate up to 20 000 Nm 3 /h has been constructed in EPS Kaweczyn. Pit coal is used as a fuel in a boiler from which flue gas is purified. Two accelerators, ELW-3, of beam power 40-50 kW and electrons energy 700 keV are applied. The arrangement of accelerators in series allows cascade, step by step gas mixture irradiation. The installation is equipped in a spray cooler, ammonia dosage system and bag filter. The irradiation/reaction part of the plant was put in operation in April 1991. Separately, laboratory research on grain bed aerosol filtration is performed to study the possibility of such filtration unit as a prefilter application. Agriculture tests of the byproduct have been performed. Two types of the byproduct with and without additive were tested. Comparative vegetation tests have shown that application of the pure product gives similar results as application of market fertilizer - ammonia sulfate. The elemental analysis have shown that content of the heavy metals do not exceed acceptable value. For both systems dosimetric measurements were performed. The electron penetration depth and dose distribution profiles were established. The results of preliminary tests both laboratory and pilot plant units have proved high efficiency of SO 2 and NO X removal. (J.P.N.)

  19. Photoelectrochemical-type sunlight photodetector based on MoS2/graphene heterostructure

    International Nuclear Information System (INIS)

    Huang, Zongyu; Han, Weijia; Chander, D Sathish; Qi, Xiang; Zhang, Han; Tang, Hongli; Ren, Long

    2015-01-01

    We have fabricated a novel sunlight photo-detector based on a MoS 2 /graphene heterostructure. The MoS 2 /graphene heterostructure was prepared by a facile hydrothermal method along with a subsequent annealing process followed by a substrate-induced high selective nucleation and growth mechanism. The microstructures and morphologies of the two-dimensional MoS 2 /graphene heterostructure can be experimentally confirmed by x-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM) and a UV–vis absorption spectrometer. Photoresponse investigations performed by a photoelectrochemical (PEC) measurement system indicate that the synthesized MoS 2 /graphene heterostructure shows superior photoresponse activities under the illumination of sunlight in contrast with bare MoS 2 and graphene. The improved photoresponsivity can be attributed to the enhanced light absorption, strong light–matter interaction and the extremely efficient charge separation of the heterostructure. The structure and performances of the MoS 2 /graphene heterostructure suggest promising applications in the field of photonics and optoelectronics. (paper)

  20. Size-tunable band alignment and optoelectronic properties of transition metal dichalcogenide van der Waals heterostructures

    Science.gov (United States)

    Zhao, Yipeng; Yu, Wangbing; Ouyang, Gang

    2018-01-01

    2D transition metal dichalcogenide (TMDC)-based heterostructures exhibit several fascinating properties that can address the emerging market of energy conversion and storage devices. Current achievements show that the vertical stacked TMDC heterostructures can form type II band alignment and possess significant optoelectronic properties. However, a detailed analytical understanding of how to quantify the band alignment and band offset as well as the optimized power conversion efficiency (PCE) is still lacking. Herein, we propose an analytical model to exhibit the PCEs of TMDC van der Waals (vdW) heterostructures and explore the intrinsic mechanism of photovoltaic conversion based on the detailed balance principle and atomic-bond-relaxation correlation mechanism. We find that the PCE of monolayer MoS2/WSe2 can be up to 1.70%, and that of the MoS2/WSe2 vdW heterostructures increases with thickness, owing to increasing optical absorption. Moreover, the results are validated by comparing them with the available evidence, providing realistic efficiency targets and design principles. Highlights • Both electronic and optoelectronic models are developed for vertical stacked MoS2/WSe2 heterostructures. • The underlying mechanism on size effect of electronic and optoelectronic properties for vertical stacked MoS2/WSe2 heterostructures is clarified. • The macroscopically measurable quantities and the microscopical bond identities are connected.

  1. Improved price transparency : how electronic trading is affecting natural gas prices

    International Nuclear Information System (INIS)

    Gault, G.

    2002-01-01

    New electronic trading platforms can be categorized as: (1) proprietary or marketplace systems owned by the market maker or liquidity provider, (2) matching systems for brokerage systems where counter parties are matched and electronically executed through bilateral trading agreements, and (3) cleared exchanges which have traditional characteristics such as neutrality, anonymity, and clearing. The Calgary-based Natural Gas Exchange (NGX) is an independent electronic energy exchange. It is owned by OM in Stockholm, Sweden and operates under an order from the Alberta Securities Commission. Its main objective is to provide electronic energy trading and clearing services to participants in the the North American energy market. NGX has transacted more than 270,000 trades with zero default. The services at NGX include: centralized and anonymous electronic trading; centralized risk management and netting; centralized collateral management; transaction facilitation; pipeline title transfer coordination; and, real time price index generation. This paper described the impact of the many different types of trading platforms on liquidity and volatility in the marketplace. It also addresses the future of online energy trading and their respective platforms. Supply and demand of natural gas, storage, and weather are the basic market fundamentals, but trading platforms have an impact of volatility of natural gas because of market fragmentation, transparency, and market systems. As online energy exchanges evolve, we will see a consolidation of online energy exchanges that will thin a shrinking pool of players, and appropriately capitalized and centralized clearinghouses will become the backbone of all major online energy trading operations

  2. EPR investigation of electronic excitations in rare gas solids (Review Article)

    Science.gov (United States)

    Zhitnikov, R. A.; Dmitriev, Yu. A.

    1998-10-01

    The methods are described for producing unstable paramagnetic excited states in rare gas cryocrystals Ne, Ar, Kr, and Xe through the trapping, in the cryocrystals growing from the gas phase, the products of the gas discharge taking place in the same or other rare gas. The paper presents a technique and results of an observation and investigation of excited states in rare gas cryocrystals with electron paramagnetic resonance (EPR). The discovered unstable paramagnetic centers are interpreted as being local metastable excited np5(n+1)s atomic-type states in rare gas cryocrystals which are subject to the action of the anisotropic electric field resulted from the crystal surroundings distorted by the center. An account is given of the mechanisms for formation of observed paramagnetic excited states in cryocrystals which arise owing to the excitation energy of the metastable 3P2 atoms of Ne, Ar, Kr, Xe and He 23S1 and 21S0 atoms that form in the discharge in an appropriate gas and trap in the growing cryocrystal.

  3. Inkjet printed ambipolar transistors and inverters based on carbon nanotube/zinc tin oxide heterostructures

    International Nuclear Information System (INIS)

    Kim, Bongjun; Jang, Seonpil; Dodabalapur, Ananth; Geier, Michael L.; Prabhumirashi, Pradyumna L.; Hersam, Mark C.

    2014-01-01

    We report ambipolar field-effect transistors (FETs) consisting of inkjet printed semiconductor bilayer heterostructures utilizing semiconducting single-walled carbon nanotubes (SWCNTs) and amorphous zinc tin oxide (ZTO). The bilayer structure allows for electron transport to occur principally in the amorphous oxide layer and hole transport to occur exclusively in the SWCNT layer. This results in balanced electron and hole mobilities exceeding 2 cm 2 V −1 s −1 at low operating voltages ( 10). This work provides a pathway for realizing solution processable, inkjet printable, large area electronic devices, and systems based on SWCNT-amorphous oxide heterostructures

  4. Purification of coal fired boiler flue gas and fertilizer production by using electron beam

    International Nuclear Information System (INIS)

    Maezawa, Akihiko

    1996-01-01

    Electron beam irradiation technology which is applied in electron accelerators is used in a variety of fields, including industry, medicine and etc.. In collaboration with the Japan Atomic Energy Research Institute, Ebara Corporation has developed a novel flue-gas treatment process by making use of the electron beam for the purification of flue gas emitted from industrial plant such as thermal power station. The E-beam flue gas treatment process (EBA Process) is applied to clean flue gas generated in the combustion of coal containing sulfur oxides (SOx) and nitrogen oxides (NOx), which are chemical pollutants responsible for acid rain. As a by-product of this process, ammonium sulfate and ammonium nitrate mixture is obtained. This mixture can be recovered from the process as a valuable fertilizer to promote the growth of agricultural produce. The EBA process thus serves two important purposes at the same time: It helps prevent environmental pollution and produces a fertilizer that is vitally important for increasing food production to meet the world's future population growth. (J.P.N.)

  5. Experimental evidence of nitrous acid formation in the electron beam treatment of flue gas

    International Nuclear Information System (INIS)

    Maetzing, H.; Namba, H.; Tokunaga, O.

    1994-01-01

    In the Electron Beam Dry Scrubbing (EBDS) process, flue gas from fossil fuel burning power plants is irradiated with accelerated (300-800 keV) electrons. Thereby, nitrogen oxide (NO x ) and sulfur dioxide (SO 2 ) traces are transformed into nitric and sulfuric acids, respectively, which are converted into particulate ammonium nitrate and sulfate upon the addition of ammonia. The powdery product can be filtered from the main gas stream and can be sold as agricultural fertilizer. A lot of experimental investigations have been performed on the EBDS process and computer models have been developed to interpret the experimental results and to predict economic improvements. According to the model calculations, substantial amounts of intermediate nitrous acid (HNO 2 ) are formed in the electron beam treatment of flue gas. The first experimental investigation about the formation of nitrous acid in an irradiated mixture of NO in synthetic air has been undertaken. Under these conditions, aerosol formation is avoided. UV spectra of the irradiated gas were recorded in the wavelength range λ = 345-375 nm. Both NO 2 and HNO 2 have characteristic absorption bands in this wavelength range. Calibration spectra of NO 2 were subtracted from the sample spectra. The remaining absorption bands can clearly be assigned to nitrous acid. The concentration of nitrous acid was determined by differential optical absorption. It was found lower than the model prediction. The importance of nitrous acid formation in the EBDS process needs to be clarified. (author)

  6. Heterogeneous reactions and aerosol formation in flue gas cleaning by electron beam

    International Nuclear Information System (INIS)

    Baumann, W.; Jordan, S.; Leichsenring, C.H.; Maetzing, H.; Paur, H.R.; Schikarski, W.

    1990-08-01

    The electron beam dry scrubbing process is a simultaneous method for the removal of SO 2 and NO x from flue gas. By electron irradiation radicals (OH, O 2 H, O) are formed from the main flue gas components which oxidize NO x and SO 2 into the acids HNO 3 and H 2 SO 4 . These are then neutralized by the injection of NH 3 . A submicron aerosol consisting of ammonium salts is formed which is filtered from the offgas. The main pathways of the gas phase chemistry and product formation have been elucidated by experimental and theoretical studies. Back reactions which occur in the gas and the particle phase limit the energy efficiency of the process. By recirculation of irradiated gas into the reaction vessel (multiple irradiation) a significant improvement of removal yields was obtained. This enhancement of the energy efficiency requires the removal of products between the irradiation steps. Studies show that the material balance is complete. Deficits in the N and S balance of the process are due to the additional formation of molecular nitrogen and the deposition of ammonium sulfate in the ducts. Aerosol formation participates only with 30% in the material balance. The remaining 70% of the product are formed by surface reactions in the filter cake (40%) and in the ducts (30%). (orig.) With 38 figs., 29 tabs [de

  7. Effect of isotopic substitution upon the gas phase and solution electron affinities of nitrobenzene

    International Nuclear Information System (INIS)

    Stevenson, G.R.; Reiter, R.C.; Espe, M.E.; Bartmess, J.E.

    1987-01-01

    Ion cyclotron resonance and electron spin resonance have been utilized to determine the equilibrium constant for the electron transfer from the nitrobenzene anion radical to 15 N labeled nitrobenzene (Ph 14 NO 2 - + Ph 15 NO 2 ↔ Ph 14 NO 2 + Ph 15 NO 2 9 . It was found that the equilibrium constant is within experimental error of unity at 305 K. Molecular orbital calculations indicate that this might be accounted for by the shortening of the C-N bond and a counterbalancing lengthening of the N-O bonds upon electron attachment to nitrobenzene. An equilibrium constant that is much larger than unity can be observed in liquid ammonia at 208 K when K + serves as the gegenion (K/sub eq/ = 2.1). However, when Na + serves as the gegenion, the solution electron affinity of Ph 14 NO 2 is greater than that of Ph 15 NO 2 (K/sub eq/ = 0.4). These results are explained in terms of ion association. When the hydrogen atoms are replaced with deuteriums, the gas phase electron affinity is decreased. A similar decrease is observed in liquid ammonia. In the gas phase this is attributed to the slight lengthening of all the C-H bonds upon electron attachment

  8. Ripple structure in degenerate electron-gas-dominated stars with intense magnetic fields

    International Nuclear Information System (INIS)

    Wilkes, J.M.

    1988-01-01

    We investigate the implications of ripple structure, i.e., the appearance of oscillating and discontinuous slopes in the thermodynamic variables of a degenerate electron gas, for models of magnetic stars dominated by such a gas. We also examine the effects in these models of the recent discovery by R.L. Ingraham that strong magnetic fields can inhibit degeneracy in an electron gas. The thesis begins with the presentation of a theory of self-gravitating fluids based upon recent work in modern continuum mechanics and thermodynamics on electromagnetic interactions in continuous media. Our theory predicts as a general result the existence of an anisotropic pressure tensor in such a fluid, which is in agreement with the one known to occur in the special case of a free-electron gas in a magnetic field. Furthermore, the theory clarifies the relation between this pressure tensor and the scalar thermodynamic pressure, and provides an unambiguous prescription for the incorporation of these and other variables, such as the magnetization, in the fluid equations of motion. We next show that under suitable assumptions the usual thermodynamic equilibrium and stability conditions for such a fluid follow from the general theory. A definition of local thermodynamic equilibrium is then introduced, and used to develop a local equilibrium statistical mechanics of ideal gases. From this we derive the equations of state for an ideal free-electron gas in a magnetic field. Finally, these equations of state are used in a simplified system of structure equations for model stars in intense magnetic fields. We find the effects of degeneracy-inhibition to be small in these simple models

  9. Electronic structure of the amorphous-crystalline Silicon heterostructure contact; Die elektronische Struktur des amorph-kristallinen Silizium-Heterostruktur-Kontakts

    Energy Technology Data Exchange (ETDEWEB)

    Korte, L.

    2006-07-01

    In the present work, the electronic density of states of hydrogenated amorphous silicon (a-Si:H) layers in the thickness range from 300 down to {proportional_to}2 nm was examined by Near-UV-photoelectron spectroscopy (NUV-PES). The measurements yield a mean density (averaged over all directions in k space) of the extended states in the valence band close to the band edge E{sub v}, down to approximately E{sub v}-1 eV, as well as the density of states in the band-gap between E{sub v} and the Fermi level E{sub f}. An analytic model for the density of states was fitted to the measured yield data. The model describes the extended states close to the band edge as well as the localized states in the band gap. The defect parameters obtained from the fits to the 300 nm sample are elevated with respect to literature data. In contrast to PES the photocurrent measurement yield the defect parameters averaged over the entire layer thickness. Finally, the photocurrent measurements can be evaluated in the Tauc plot to yield the optical band-gap, E{sub g}{sup opt}=1.76(5) eV. The methodology developed in the first part of the thesis (PES measurement and fit of the model density of states) was then applied to various series of approximately 10 nm thin a-Si:H layers on c-Si substrates, where the deposition temperature of the layers and the concentration of their doping both by phosphorus and boron were varied. The experimental results can be summarized as follows: Ultrathin a-Si:H layers show an optimum of the deposition-temperature around 230 C. The optimum is characterized by an Urbach energy of 66(1) meV and a defect-density of 2,9(3).10{sup 18} cm{sup -3}. For undoped layers, the Fermi level lies E{sub F}-E{sub V}{sup {mu}}=1.04(6) eV, the films are therefore slightly n-type. Conductivity measurements at identically prepared thick layers on glass allow to determine the distance of the Fermi level to the conduction band mobility edge, E{sub C}{sup {mu}}-E{sub F}. Both for the

  10. Fullerene-rare gas mixed plasmas in an electron cyclotron resonance ion source

    Energy Technology Data Exchange (ETDEWEB)

    Asaji, T., E-mail: asaji@oshima-k.ac.jp; Ohba, T. [Oshima National College of Maritime Technology, 1091-1 Komatsu, Suo-oshima, Oshima, Yamaguchi 742-2193 (Japan); Uchida, T.; Yoshida, Y. [Bio-Nano Electronics Research Centre, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585 (Japan); Minezaki, H.; Ishihara, S. [Graduate School of Engineering, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585 (Japan); Racz, R.; Biri, S. [Institute of Nuclear Research (ATOMKI), H-4026 Debrecen, Bem Tér 18/c (Hungary); Muramatsu, M.; Kitagawa, A. [National Institute of Radiological Sciences (NIRS), 4-9-1 Anagawa, Inage-ku, Chiba 263-8555 (Japan); Kato, Y. [Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871 (Japan)

    2014-02-15

    A synthesis technology of endohedral fullerenes such as Fe@C{sub 60} has developed with an electron cyclotron resonance (ECR) ion source. The production of N@C{sub 60} was reported. However, the yield was quite low, since most fullerene molecules were broken in the ECR plasma. We have adopted gas-mixing techniques in order to cool the plasma and then reduce fullerene dissociation. Mass spectra of ion beams extracted from fullerene-He, Ar or Xe mixed plasmas were observed with a Faraday cup. From the results, the He gas mixing technique is effective against fullerene destruction.

  11. Towards understanding the influence of electron-gas interactions on imaging in an environmental TEM

    DEFF Research Database (Denmark)

    Wagner, Jakob Birkedal; Boothroyd, Chris; Beleggia, Marco

    2011-01-01

    be used. In the differential pumping approach, the gas is confined to the region around the specimen only by pressure-limiting apertures. In order to retain flexibility in the sample region, the pole piece gap and the highest pressure part of the column are relatively large (~7mm). As a result, electron...... on-going work involves the systematic measurements of images, diffraction patterns and energy-loss spectra acquired in the presence of gas, for a variety of different beam current densities, accelerating voltages and choices of specimen....

  12. Ab initio study of He-He interactions in homogeneous electron gas

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jinlong; Niu, Liang-Liang; Zhang, Ying, E-mail: zhyi@buaa.edu.cn

    2017-02-15

    Highlights: • Helium atoms interact via the He induced Friedel oscillations of electron densities. • He-He global binding energy minimum of ∼−0.09 eV is reached at an optimal electron density of 0.04 e/Å{sup 3}, corresponding to an optimal He-He separation of ∼1.7 Å. • The present results can qualitatively interpret the well-known He self-trapping behavior in metals. - Abstract: We have investigated the immersion energy of a single He and the He-He interactions in homogeneous electron gas using ab initio calculations. It is found that He dislikes electrons and He-He interact via the He induced Friedel oscillations of electron densities. A critical electron density at which the global binding energy extremum shifts from the first minimum to the second one is identified. We also discover that the He-He global binding energy minimum of ∼−0.09 eV is reached at an optimal electron density of 0.04 e/Å{sup 3}, corresponding to an optimal He-He separation of ∼1.7 Å. Further, the He atoms are found to gain a trivial amount of 2s and 2p states from the free electrons, inducing a hybridization between the He s- and p-states. The present results can qualitatively interpret the well-known He self-trapping behavior in metals.

  13. Prospects for applications of electron beams in processing of gas and oil hydrocarbons

    Energy Technology Data Exchange (ETDEWEB)

    Ponomarev, A. V., E-mail: ponomarev@ipc.rssi.ru [Russian Academy of Sciences, Frumkin Institute of Physical Chemistry and Electrochemistry (Russian Federation); Pershukov, V. A. [ROSATOM National Nuclear Corporation (Russian Federation); Smirnov, V. P. [CJSC “Nauka i Innovatsii” (Russian Federation)

    2015-12-15

    Waste-free processing of oil and oil gases can be based on electron-beam technologies. Their major advantage is an opportunity of controlled manufacturing of a wide range of products with a higher utility value at moderate temperatures and pressures. The work considers certain key aspects of electron beam technologies applied for the chain cracking of heavy crude oil, for the synthesis of premium gasoline from oil gases, and also for the hydrogenation, alkylation, and isomerization of unsaturated oil products. Electronbeam processing of oil can be embodied via compact mobile modules which are applicable for direct usage at distant oil and gas fields. More cost-effective and reliable electron accelerators should be developed to realize the potential of electron-beam technologies.

  14. Some aspects of the interaction of photons and electrons with rare gas atoms

    International Nuclear Information System (INIS)

    Westerveld, W.B.

    1979-01-01

    Processes for excitation in rare gas atoms are described, due to absorption of photons and bombardment with electrons. The differences and similarities between excitation by absorption of light (spectroscopy) and by electron impact (collision physics) are qualified. Oscillator strengths from the self-absorption of resonance radiation in rare gases are determined. The excitation of 2'P and 3'P states of helium by electrons has been studied by observing excitation cross sections and polarization fractions obtained from XUV radiation. A description is given of a recently completed apparatus to study inelastic electron-atom scattering processes by coincidence techniques. An introduction is given to the theory which relates the parameters describing an excited state of an atom to the angular distribution of the radiation emitted in the decay of the excited state. (Auth.)

  15. Experimental study of single-electron loss by Ar+ ions in rare-gas atoms

    Science.gov (United States)

    Reyes, P. G.; Castillo, F.; Martínez, H.

    2001-04-01

    Absolute differential and total cross sections for single-electron loss were measured for Ar+ ions on rare-gas atoms in the laboratory energy range of 1.5 to 5.0 keV. The electron loss cross sections for all the targets studied are found to be in the order of magnitude between 10-19 and 10-22 cm2, and show a monotonically increasing behaviour as a function of the incident energy. The behaviour of the total single-electron loss cross sections with the atomic target number, Zt, shows different dependences as the collision energy increases. In all cases the present results display experimental evidence of saturation in the single-electron loss cross section as the atomic number of the target increases.

  16. The Electron Temperature of a Partially Ionized Gas in an Electric Field

    International Nuclear Information System (INIS)

    Robben, F.

    1968-03-01

    The electron temperature of a partially ionized gas in an electric field can be determined by the collision rate for momentum transfer and the collision rate for energy transfer. Mean values of these rates are defined such that a simple expression for the electron temperature is obtained, and which depends, among other things, on the ratio of these mean rates. This ratio is calculated in the Lorentz approximation for power law cross sections, and also as a function of the degree of ionization for a helium plasma. It is pointed out that the complete results of refined transport theory can be used in calculating electron mobility and electron temperature in a multicomponent plasma without undue difficulty

  17. The Electron Temperature of a Partially Ionized Gas in an Electric Field

    Energy Technology Data Exchange (ETDEWEB)

    Robben, F

    1968-03-15

    The electron temperature of a partially ionized gas in an electric field can be determined by the collision rate for momentum transfer and the collision rate for energy transfer. Mean values of these rates are defined such that a simple expression for the electron temperature is obtained, and which depends, among other things, on the ratio of these mean rates. This ratio is calculated in the Lorentz approximation for power law cross sections, and also as a function of the degree of ionization for a helium plasma. It is pointed out that the complete results of refined transport theory can be used in calculating electron mobility and electron temperature in a multicomponent plasma without undue difficulty.

  18. 2D lateral heterostructures of group-III monochalcogenide: Potential photovoltaic applications

    Science.gov (United States)

    Cheng, Kai; Guo, Yu; Han, Nannan; Jiang, Xue; Zhang, Junfeng; Ahuja, Rajeev; Su, Yan; Zhao, Jijun

    2018-04-01

    Solar photovoltaics provides a practical and sustainable solution to the increasing global energy demand. Using first-principles calculations, we investigate the energetics and electronic properties of two-dimensional lateral heterostructures by group-III monochalcogenides and explore their potential applications in photovoltaics. The band structures and formation energies from supercell calculations demonstrate that these heterostructures retain semiconducting behavior and might be synthesized in laboratory using the chemical vapor deposition technique. According to the computed band offsets, most of the heterojunctions belong to type II band alignment, which can prevent the recombination of electron-hole pairs. Besides, the electronic properties of these lateral heterostructures can be effectively tailored by the number of layers, leading to a high theoretical power conversion efficiency over 20%.

  19. Thermoelectric properties of IV–VI-based heterostructures and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Borges, P.D., E-mail: pabloborges@ufv.br [Instituto de Ciências Exatas e Tec., Universidade Federal de Viçosa, Rio Paranaíba, MG (Brazil); Department of Physics, Texas State University, San Marcos, TX 78666 (United States); Petersen, J.E.; Scolfaro, L. [Department of Physics, Texas State University, San Marcos, TX 78666 (United States); Leite Alves, H.W. [Departamento de Ciências Naturais, Universidade Federal de São João Del Rei, Caixa Postal 110, São João Del Rei 36300-000, MG (Brazil); Myers, T.H. [Department of Physics, Texas State University, San Marcos, TX 78666 (United States)

    2015-07-15

    Doping in a manner that introduces anisotropy in order to reduce thermal conductivity is a significant focus in thermoelectric research today. By solving the semiclassical Boltzmann transport equations in the constant scattering time (τ) approximation, in conjunction with ab initio electronic structure calculations, within Density Functional Theory, we compare the Seebeck coefficient (S) and figure of merit (ZT) of bulk PbTe to PbTe/SnTe/PbTe heterostructures and PbTe doping superlattices (SLs) with periodically doped planes. Bismuth and Thallium were used as the n- and p-type impurities, respectively. The effects of carrier concentration are considered via chemical potential variation in a rigid band approximation. The impurity bands near the Fermi level in the electronic structure of PbTe SLs are of Tl s- and Bi p-character, and this feature is independent of the doping concentration or the distance between impurity planes. We observe the impurity bands to have a metallic nature in the directions perpendicular to the doping planes, yet no improvement on the values of ZT is found when compared to bulk PbTe. For the PbTe/SnTe/PbTe heterostructures, the calculated S presents good agreement with recent experimental data, and an anisotropic behavior is observed for low carrier concentrations (n<10{sup 18} cm{sup −3}). A large value of ZT{sub ||} (parallel to the growth direction) of 3.0 is predicted for n=4.7×10{sup 18} cm{sup −3} and T=700 K, whereas ZT{sub p} (perpendicular to the growth direction) is found to peak at 1.5 for n=1.7×10{sup 17} cm{sup −3}. Both electrical conductivity enhancement and thermal conductivity reduction are analyzed. - Graphical abstract: Figure of merit for PbTe/SnTe/PbTe heterostructure along the [0 0 1] direction, P.D. Borges, J.E. Petersen, L. Scolfaro, H.W. Leite Alves, T.H. Myers, Improved thermoelectric properties of IV–VI-based heterostructures and superlattices. - Highlights: • Thermoelectric properties of IV

  20. The Atmospheric Scanning Electron Microscope with open sample space observes dynamic phenomena in liquid or gas.

    Science.gov (United States)

    Suga, Mitsuo; Nishiyama, Hidetoshi; Konyuba, Yuji; Iwamatsu, Shinnosuke; Watanabe, Yoshiyuki; Yoshiura, Chie; Ueda, Takumi; Sato, Chikara

    2011-12-01

    Although conventional electron microscopy (EM) requires samples to be in vacuum, most chemical and physical reactions occur in liquid or gas. The Atmospheric Scanning Electron Microscope (ASEM) can observe dynamic phenomena in liquid or gas under atmospheric pressure in real time. An electron-permeable window made of pressure-resistant 100 nm-thick silicon nitride (SiN) film, set into the bottom of the open ASEM sample dish, allows an electron beam to be projected from underneath the sample. A detector positioned below captures backscattered electrons. Using the ASEM, we observed the radiation-induced self-organization process of particles, as well as phenomena accompanying volume change, including evaporation-induced crystallization. Using the electrochemical ASEM dish, we observed tree-like electrochemical depositions on the cathode. In silver nitrate solution, we observed silver depositions near the cathode forming incidental internal voids. The heated ASEM dish allowed observation of patterns of contrast in melting and solidifying solder. Finally, to demonstrate its applicability for monitoring and control of industrial processes, silver paste and solder paste were examined at high throughput. High resolution, imaging speed, flexibility, adaptability, and ease of use facilitate the observation of previously difficult-to-image phenomena, and make the ASEM applicable to various fields. Copyright © 2011 Elsevier B.V. All rights reserved.

  1. Focusing of megaampere electron beam in gas cell for production of flash X-ray source

    Energy Technology Data Exchange (ETDEWEB)

    Zinchenko, Vl; Chlenov, A M; Shiyan, V D [Research Institute of Scientific Instruments, Turaevo-Lytkarino (Russian Federation)

    1997-12-31

    One of important problems to be solved in the development of an intense source of flash X-rays is the choice of the optimum design of the high-current diode at the exit of the electron accelerator. The results of numerical investigations of megaampere relativistic electron beam (REB) generation and focusing in a compound diode are discussed. The diode consists of a vacuum field-emission annular cathode, a planar anode, and a gas cell inserted between the anode foil and the target. (author). 2 figs., 5 refs.

  2. Gas-phase synthesis of magnesium nanoparticles: A high-resolution transmission electron microscopy study

    International Nuclear Information System (INIS)

    Kooi, B. J.; Palasantzas, G.; De Hosson, J. Th. M.

    2006-01-01

    Magnesium nanoparticles with size above 10 nm, prepared by gas-phase syntheses, were investigated by high-resolution transmission electron microscopy. The dominant particle shape is a hexagonal prism terminated by Mg(0002) and Mg(1010) facets. Oxidation of Mg yields a MgO shell (∼3 nm thick), which has an orientation relation with the Mg. Inhomogeneous facet oxidation influences their growth kinetics resulting in a relatively broad size and shape distribution. Faceted voids between Mg and MgO shells indicate a fast outward diffusion of Mg and vacancy rearrangement into voids. The faceting of polar (220) planes is assisted by electron irradiation

  3. Effect of impurities on the two-dimensional electron gas polarizability

    International Nuclear Information System (INIS)

    Nkoma, J.S.

    1980-06-01

    The polarizability for a two-dimensional electron gas is calculated in the presence of impurities by a Green function formalism. This leads to a system with finite mean free path due to electrons scattering off impurities. The calculated polarizability is found to be strongly dependent on the mean free path. The main feature is the suppression of the sharp corner at wave vector 2ksub(F) for finite mean free paths, and the pure metal result is recovered for the infinite mean free path. A possible application of the results to the transport properties of semiconductor inversion layers is discussed. (author)

  4. Study of Electron Gas on a Neutron-Rich Nuclear Pasta

    Science.gov (United States)

    Ramirez-Homs, Enrique

    This study used a classical molecular dynamics model to observe the role of electron gas on the formation of nuclear structures at subsaturation densities (rho pasta structures was observed even with the absence of the Coulomb interaction but with a modication of the shapes formed. It was found that the presence of the electron gas tends to distribute matter more evenly, forms less compact objects, decreases the isospin content of clusters, modies the nucleon mobility, reduces the persistence and the fragment size multiplicity, but does not alter the inter-particle distance in clusters. The degree of these effects also varied on the nuclear structures and depended on their isospin content, temperature, and density.

  5. Piecewise parabolic negative magnetoresistance of two-dimensional electron gas with triangular antidot lattice

    International Nuclear Information System (INIS)

    Budantsev, M. V.; Lavrov, R. A.; Pogosov, A. G.; Zhdanov, E. Yu.; Pokhabov, D. A.

    2011-01-01

    Extraordinary piecewise parabolic behavior of the magnetoresistance has been experimentally detected in the two-dimensional electron gas with a dense triangular lattice of antidots, where commensurability magnetoresistance oscillations are suppressed. The magnetic field range of 0–0.6 T can be divided into three wide regions, in each of which the magnetoresistance is described by parabolic dependences with high accuracy (comparable to the experimental accuracy) and the transition regions between adjacent regions are much narrower than the regions themselves. In the region corresponding to the weakest magnetic fields, the parabolic behavior becomes almost linear. The observed behavior is reproducible as the electron gas density changes, which results in a change in the resistance by more than an order of magnitude. Possible physical mechanisms responsible for the observed behavior, including so-called “memory effects,” are discussed.

  6. Electron beam flue gas treatment. Research cooperation among JAERI, IAEA and INCT

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1996-10-01

    The research co-operation is conducted among Japan Atomic Energy Research Institute (JAERI), International Atomic Energy Agency (IAEA) and Institute of Nuclear Chemistry and Technology in Poland (INCT) on Electron Beam Flue Gas Treatment from January 1993 to March 1997. The first phase of the cooperation was carried out for 3 years from January 1993 to March 1995. This cooperation was performed through information exchange meetings (Coordination Meetings), held in Takasaki and Warsaw, and experiments and discussions by exchange scientists. Many useful results were obtained on electron beam treatment of flue gas from coal-combustion heat generation plant in Kaweczyn within the frame work of the research co-operation. This report includes the main results of the tripartite research cooperation. (author)

  7. High-harmonic generation in a quantum electron gas trapped in a nonparabolic and anisotropic well

    Science.gov (United States)

    Hurst, Jérôme; Lévêque-Simon, Kévin; Hervieux, Paul-Antoine; Manfredi, Giovanni; Haas, Fernando

    2016-05-01

    An effective self-consistent model is derived and used to study the dynamics of an electron gas confined in a nonparabolic and anisotropic quantum well. This approach is based on the equations of quantum hydrodynamics, which incorporate quantum and nonlinear effects in an approximate fashion. The effective model consists of a set of six coupled differential equations (dynamical system) for the electric dipole and the size of the electron gas. Using this model we show that: (i) high harmonic generation is related to the appearance of chaos in the phase space, as attested to by related Poincaré sections; (ii) higher order harmonics can be excited efficiently and with relatively weak driving fields by making use of chirped electromagnetic waves.

  8. High- and low-pressure operation of the gas electron multiplier

    International Nuclear Information System (INIS)

    Bondar, A.; Buzulutskov, A.; Shekhtman, L.; Sauli, F.

    1998-01-01

    We have studied the operation of the gas electron multiplier (GEM) in gas mixtures Xe-CO 2 , Ar-CO 2 and CH 4 at different pressures varying from 0.1 to 5 atm. In Ar- and Xe-based mixtures, the maximum GEM gain considerably decreases with pressure, from a few hundreds at 1 atm to below 10 at 5 atm. Combined gain of GEM and the micro-strip gas chamber (MSGC) can exceed values of 10000 at 1 atm and 100 at 5 atm. High GEM gains, of above 1000, were obtained in CH 4 at low pressures. We have observed the effect of the avalanche confinement in GEM micro-holes, resulting in violation of the pressure scaling and in the possibility of GEM operation in pure noble gases. (author)

  9. Thermal boundary conditions for electrons in a weakly ionized gas near a catalytic wall

    International Nuclear Information System (INIS)

    Chekmarev, I.

    1981-01-01

    A technique of matched asymptotic expansions is used to examine the derivation of hydrodynamic transport equations for the external region of a weakly ionized multitemperature gas near an absorbing and conducting wall. An approximate moment solution is constructed for the Knudsen boundary layer. The conditions for the matching of the external and internal expansions lead to a new form of the hydrodynamic boundary conditions, from which the singular behavior of the energy equation for electrons near the wall has been eliminated

  10. Magnetic behavior of Van Vleck ions and an electron gas interacting by exchange

    International Nuclear Information System (INIS)

    Palermo, L.; Silva, X.A. da.

    1980-01-01

    The magnetic behavior of a model in which Van Vleck ions, under the action of a crystal field, interacting by exchange with an electron gas is investigated. The condition of onset of ferromagnetism and the behavior of the critical temperature, band and ionic magnetizations (and susceptibilities) versus temperature, as a function of the band width, exchange interaction and the crystal field splitting energy parameters are obtained within an approximation equivalent to a molecular field formulation. (Author) [pt

  11. Magnetoresistance calculations for a two-dimensional electron gas with unilateral short-period strong modulation

    Czech Academy of Sciences Publication Activity Database

    Výborný, Karel; Smrčka, Ludvík

    2002-01-01

    Roč. 66, č. 20 (2002), s. 205318-1 - 205318-8 ISSN 0163-1829 R&D Projects: GA ČR GA202/01/0754 Institutional research plan: CEZ:AV0Z1010914 Keywords : magnetoresistance * short-period superlattices * two-dimensional electron gas Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.327, year: 2002

  12. Efficient photocarrier injection in a transition metal oxide heterostructure

    CERN Document Server

    Muraoka, Y; Ueda, Y; Hiroi, Z

    2002-01-01

    An efficient method for doping a transition metal oxide (TMO) with hole carriers is presented: photocarrier injection (PCI) in an oxide heterostructure. It is shown that an insulating vanadium dioxide (VO sub 2) film is rendered metallic under light irradiation by PCI from an n-type titanium dioxide (TiO sub 2) substrate doped with Nb. Consequently, a large photoconductivity, which is exceptional for TMOs, is found in the VO sub 2 /TiO sub 2 :Nb heterostructure. We propose an electronic band structure where photoinduced holes created in TiO sub 2 :Nb can be transferred into the filled V 3d band via the low-lying O 2p band of VO sub 2. (letter to the editor)

  13. Control of tunneling in heterostructures

    International Nuclear Information System (INIS)

    Volokhov, V M; Tovstun, C A; Ivlev, B

    2007-01-01

    A tunneling current between two rectangular potential wells can be effectively controlled by applying an external ac field. A variation of the ac frequency by 10% may lead to the suppression of the tunneling current by two orders of magnitude, which is a result of quantum interference under the action of the ac field. This effect of destruction of tunneling can be used as a sensitive control of tunneling current across nanosize heterostructures

  14. Electron scattering in dense He-Ar gas mixtures: A pressure shift study

    International Nuclear Information System (INIS)

    Asaf, U.; Felps, W.S.; McGlynn, S.P.

    1989-01-01

    The dependence of the energies of high-n Rydberg states of CH 3 I on the molar composition of helium-argon mixtures (in the number density range 1.3x10 20 --5.6x10 20 cm -3 ) is reported. The energy shifts, when normalized to a given density value, are found to vary linearly with the mole fraction of either component of the binary, rare-gas mixture. The observed change in sign of the energy shift is attributable to the different signs of the electron scattering lengths for the two rare-gas components. As a result, there exists a mixture composition, at a mole ratio [He]/[Ar]=2.0, at which the shift is null. The experimental results for the gas mixture agree with the Fermi formula, as modified to include the Alekseev-Sobel'man polarization term. Effective electron scattering lengths and cross sections, polarizabilities, and thermal velocities are used to characterize the effects of the binary gas perturber system

  15. Renormalization of Fermi Velocity in a Composite Two Dimensional Electron Gas

    Science.gov (United States)

    Weger, M.; Burlachkov, L.

    We calculate the self-energy Σ(k, ω) of an electron gas with a Coulomb interaction in a composite 2D system, consisting of metallic layers of thickness d ≳ a0, where a0 = ħ2ɛ1/me2 is the Bohr radius, separated by layers with a dielectric constant ɛ2 and a lattice constant c perpendicular to the planes. The behavior of the electron gas is determined by the dimensionless parameters kFa0 and kFc ɛ2/ɛ1. We find that when ɛ2/ɛ1 is large (≈5 or more), the velocity v(k) becomes strongly k-dependent near kF, and v(kF) is enhanced by a factor of 5-10. This behavior is similar to the one found by Lindhard in 1954 for an unscreened electron gas; however here we take screening into account. The peak in v(k) is very sharp (δk/kF is a few percent) and becomes sharper as ɛ2/ɛ1 increases. This velocity renormalization has dramatic effects on the transport properties; the conductivity at low T increases like the square of the velocity renormalization and the resistivity due to elastic scattering becomes temperature dependent, increasing approximately linearly with T. For scattering by phonons, ρ ∝ T2. Preliminary measurements suggest an increase in vk in YBCO very close to kF.

  16. Monte Carlo study of electron relaxation in graphene with spin polarized, degenerate electron gas in presence of electron-electron scattering

    Science.gov (United States)

    Borowik, Piotr; Thobel, Jean-Luc; Adamowicz, Leszek

    2017-12-01

    The Monte Carlo simulation method is applied to study the relaxation of excited electrons in monolayer graphene. The presence of spin polarized background electrons population, with density corresponding to highly degenerate conditions is assumed. Formulas of electron-electron scattering rates, which properly account for electrons presence in two energetically degenerate, inequivalent valleys in this material are presented. The electron relaxation process can be divided into two phases: thermalization and cooling, which can be clearly distinguished when examining the standard deviation of electron energy distribution. The influence of the exchange effect in interactions between electrons with parallel spins is shown to be important only in transient conditions, especially during the thermalization phase.

  17. Tunable band gaps in graphene/GaN van der Waals heterostructures

    International Nuclear Information System (INIS)

    Huang, Le; Kang, Jun; Li, Yan; Li, Jingbo; Yue, Qu

    2014-01-01

    Van der Waals (vdW) heterostructures consisting of graphene and other two-dimensional materials provide good opportunities for achieving desired electronic and optoelectronic properties. Here, we focus on vdW heterostructures composed of graphene and gallium nitride (GaN). Using density functional theory, we perform a systematic study on the structural and electronic properties of heterostructures consisting of graphene and GaN. Small band gaps are opened up at or near the Γ point of the Brillouin zone for all of the heterostructures. We also investigate the effect of the stacking sequence and electric fields on their electronic properties. Our results show that the tunability of the band gap is sensitive to the stacking sequence in bilayer-graphene-based heterostructures. In particular, in the case of graphene/graphene/GaN, a band gap of up to 334 meV is obtained under a perpendicular electric field. The band gap of bilayer graphene between GaN sheets (GaN/graphene/graphene/GaN) shows similar tunability, and increases to 217 meV with the perpendicular electric field reaching 0.8 V Å  − 1 . (paper)

  18. Ag/CdS heterostructural composites: Fabrication, characterizations and photocatalysis

    International Nuclear Information System (INIS)

    Liu, Yang; Chi, Mei; Dong, Hailiang; Jia, Husheng; Xu, Bingshe; Zhang, Zhuxia

    2014-01-01

    Highlights: • Novel Ag/CdS core–shell heterostructural composites were fabricated using a two-step chemical method. • A formation mechanism of Ag/CdS heterostructural composites. • The photocatalytic activity of Ag/CdS heterostructural composites was found to be improved. • PL emissions are markedly quenched in the Ag/CdS composites than in CdS nanoparticles. - Abstract: Ag/CdS heterostructural materials were successfully synthesized by ultrasound-assisted polyols and hydrothermal method. Under hydrothermal condition, thiourea adsorbed on Ag nanowires releases S 2− ions, which react with vicinal Cd 2+ ions to form CdS clusters on Ag nanowires. Thereafter, the Ag/CdS composites grow into core–shell structure through CdS aggregation, Ostwald ripening, and preferential growth. The obtained core–shell structures and morphologies were investigated by XRD, SEM, and TEM; the experimental results indicate that the composites are composed of Ag nanowires serving as the core and CdS particles as the shell. The photocatalytic property of Ag/CdS core–shell materials was then investigated in detail. Comparing studies on the degradation of methylene blue were employed by using pure CdS, pure Ag, and Ag/CdS composites, respectively. The results show that the Ag/CdS composites possess higher photocatalytic degradation efficiency. Moreover, the Ag/CdS composites show improved stability, and the photocatalytic activity remains almost unchanged after four recycles. The enhanced photocatalytic effect for Ag/CdS composites is mainly attributed to the photogenerated electron transfer from CdS to Ag nanowire, while photogenerated holes still remain in CdS's valence band. Consequently, the effective separation of photogenerated electrons and holes and the resulting OH radicals improve the photocatalytic efficiency of Ag/CdS composites greatly

  19. Topological properties and correlation effects in oxide heterostructures

    Science.gov (United States)

    Okamoto, Satoshi

    2015-03-01

    Transition-metal oxides (TMOs) have long been one of the main subjects of material science because of their novel functionalities such as high-Tc superconductivity in cuprates and the colossal magnetoresistance effect in manganites. In recent years, we have seen tremendous developments in thin film growth techniques with the atomic precision, resulting in the discovery of a variety of electronic states in TMO heterostructures. These developments motivate us to explore the possibility of novel quantum states of matter such as topological insulators (TIs) in TMO heterostructures. In this talk, I will present our systematic theoretical study on unprecedented electronic states in TMO heterostructures. An extremely simple but crucial observation is that, when grown along the [111] crystallographic axis, bilayers of perovskite TMOs form buckled honeycomb lattices of transition-metal ions, similar to graphene. Thus, with the relativistic spin-orbit coupling and proper band filling, two-dimensional TI states or spin Hall insulators are anticipated. Based on tight-binding modeling and density-functional theory calculations, possible candidate materials for TIs are identified. By means of the dynamical-mean-field theory and a slave-boson mean field theory, correlation effects, characteristics of TMOs, are also examined. I will further discuss future prospects in topological phenomena in TMO heterostructures and related systems. The author thanks D. Xiao, W. Zhu, Y. Ran, R. Arita, Y. Nomura and N. Nagaosa for their fruitful discussions and collaboration. This work is supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division.

  20. Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique

    International Nuclear Information System (INIS)

    Spencer, B. F.; Smith, W. F.; Hibberd, M. T.; Dawson, P.; Graham, D. M.; Beck, M.; Bartels, A.; Guiney, I.; Humphreys, C. J.

    2016-01-01

    The effective mass, sheet carrier concentration, and mobility of electrons within a two-dimensional electron gas in an AlGaN/GaN heterostructure were determined using a laboratory-based terahertz cyclotron resonance spectrometer. The ability to perform terahertz cyclotron resonance spectroscopy with magnetic fields of up to 31 T was enabled by combining a high-field pulsed magnet with a modified asynchronous optical sampling terahertz detection scheme. This scheme allowed around 100 transmitted terahertz waveforms to be recorded over the 14 ms magnetic field pulse duration. The sheet density and mobility were measured to be 8.0 × 10 12  cm −2 and 9000 cm 2 V −1  s −1 at 77 K. The in-plane electron effective mass at the band edge was determined to be 0.228 ± 0.002m 0 .

  1. A bias-tunable electron-spin filter based on a two-dimensional electron gas modulated by ferromagnetic-Schottky metal stripes

    Energy Technology Data Exchange (ETDEWEB)

    Lu Jianduo, E-mail: l_j316@163.co [Hubei Province Key Laboratory of Systems Science in Metallurgical Process, Wuhan University of Science and Technology, Wuhan 430081 (China); Li Yunbao; Yun Meijuan [Hubei Province Key Laboratory of Systems Science in Metallurgical Process, Wuhan University of Science and Technology, Wuhan 430081 (China); Zheng Wei [Key Laboratory of Dynamic Geodesy, Institute of Geodesy and Geophysics, Chinese Academy of Sciences, Wuhan 430077 (China)

    2011-03-28

    We investigate the effect of the bias in an electron-spin filter based on a two-dimensional electron gas modulated by ferromagnetic-Schottky metal stripes. The numerical results show that the electron transmission and the conductance as well as the spin polarization are strongly dependent on the bias applied to the device. - Research highlights: We propose a bias-tunable electron-spin filter. The transmission and the conductance depend on the bias and the electron energy. The spin polarization depends on the bias and the electron energy. The results are helpful for making new types of bias-tunable spin filters.

  2. Notification determining technical standards concerning prevention of radiation injuries by electron capture detectors for gas chromatography

    International Nuclear Information System (INIS)

    1981-01-01

    This rule is established under the provisions of the law on the prevention of radiation injuries by radioisotopes, the ordinance and the regulation for the execution of the law. This rule is applied to electron capture detectors for gas chromatography under the law. Basic terms are defined, such as detector radiation source, detector container and carrier gas. The detectors shall consist of detector radiation sources and containers, and the containers must be such that the radiation sources can not be easily taken away and never cause the danger to fall off. The induction and discharge mouths of the detector containers shall be shut tightly with caps, etc. The main structures and radiation sources of detectors shall be made of materials, which are difficult to corrode, and do not melt and easily cause chemical change below 800 deg. C. Detector radiation sources shall be made of metals plated with nickel 63 less than 20 milli-curie. The radiation dose rate on the surface of a detector shall be shielded to less than 0.06 milli-rem an hour. The temperature of detectors and carrier gas shall not exceed 350 deg. C. Corrosive gas shall not be used as carrier gas. The period of effective indication is 5 years. The method of washing, and the conditions of leak, heat-resistance and shock-resistance examinations are defined, respectively. (Okada, K.)

  3. Temperature dependent electron transport and rate coefficient studies for e-beam-sustained diffuse gas discharge switching

    International Nuclear Information System (INIS)

    Carter, J.G.; Hunter, S.R.; Christophorou, L.G.

    1987-01-01

    Measurements of the electron drift velocity, w, attachment coefficient, eta/N/sub a/, and ionization coefficient, α/N, have been made in C 2 F 6 /Ar and C 2 F 6 /CH 4 gas mixtures at gas temperatures, T, of 300 and 500 0 K over the concentration range of 0.1 to 100% of the C 2 F 6 . These measurements are useful for modeling the expected behavior of repetitively operated electron-beam sustained diffuse gas discharge opening switches where gas temperatures within the switch are anticipated to rise several hundred degrees during switch operation

  4. Study of spatial resolution of coordinate detectors based on Gas Electron Multipliers

    Science.gov (United States)

    Kudryavtsev, V. N.; Maltsev, T. V.; Shekhtman, L. I.

    2017-02-01

    Spatial resolution of GEM-based tracking detectors is determined in the simulation and measured in the experiments. The simulation includes GEANT4 implemented transport of high energy electrons with careful accounting of atomic relaxation processes including emission of fluorescent photons and Auger electrons and custom post-processing with accounting of diffusion, gas amplification fluctuations, distribution of signals on readout electrodes, electronics noise and particular algorithm of final coordinate calculation (center of gravity). The simulation demonstrates that the minimum of spatial resolution of about 10 μm can be achieved with a gas mixture of Ar -CO2 (75-25 %) at a strips pitch from 250 μm to 300 μm. At a larger pitch the resolution quickly degrades reaching 80-100 μm at a pitch of 460-500 μm. Spatial resolution of low-material triple-GEM detectors for the DEUTERON facility at the VEPP-3 storage ring is measured at the extracted beam facility of the VEPP-4 M collider. One-coordinate resolution of the DEUTERON detector is measured with electron beam of 500 MeV, 1 GeV and 3.5 GeV energies. The determined value of spatial resolution varies in the range from approximately 35 μm to 50 μm for orthogonal tracks in the experiments.

  5. Inflammation-free, gas-permeable, lightweight, stretchable on-skin electronics with nanomeshes

    Science.gov (United States)

    Miyamoto, Akihito; Lee, Sungwon; Cooray, Nawalage Florence; Lee, Sunghoon; Mori, Mami; Matsuhisa, Naoji; Jin, Hanbit; Yoda, Leona; Yokota, Tomoyuki; Itoh, Akira; Sekino, Masaki; Kawasaki, Hiroshi; Ebihara, Tamotsu; Amagai, Masayuki; Someya, Takao

    2017-09-01

    Thin-film electronic devices can be integrated with skin for health monitoring and/or for interfacing with machines. Minimal invasiveness is highly desirable when applying wearable electronics directly onto human skin. However, manufacturing such on-skin electronics on planar substrates results in limited gas permeability. Therefore, it is necessary to systematically investigate their long-term physiological and psychological effects. As a demonstration of substrate-free electronics, here we show the successful fabrication of inflammation-free, highly gas-permeable, ultrathin, lightweight and stretchable sensors that can be directly laminated onto human skin for long periods of time, realized with a conductive nanomesh structure. A one-week skin patch test revealed that the risk of inflammation caused by on-skin sensors can be significantly suppressed by using the nanomesh sensors. Furthermore, a wireless system that can detect touch, temperature and pressure is successfully demonstrated using a nanomesh with excellent mechanical durability. In addition, electromyogram recordings were successfully taken with minimal discomfort to the user.

  6. Ballistic magnetotransport in a suspended two-dimensional electron gas with periodic antidot lattices

    Energy Technology Data Exchange (ETDEWEB)

    Zhdanov, E. Yu., E-mail: zhdanov@isp.nsc.ru; Pogosov, A. G.; Budantsev, M. V.; Pokhabov, D. A.; Bakarov, A. K. [Siberian Branch of the Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics (Russian Federation)

    2017-01-15

    The magnetoresistance of suspended semiconductor nanostructures with a two-dimensional electron gas structured by periodic square antidot lattices is studied. It is shown that the ballistic regime of electron transport is retained after detaching the sample from the substrate. Direct comparative analysis of commensurability oscillations of magnetoresistance and their temperature dependences in samples before and after suspension is performed. It is found that the temperature dependences are almost identical for non-suspended and suspended samples, whereas significant differences are observed in the nonlinear regime, caused by direct current passage. Commensurability oscillations in the suspended samples are more stable with respect to exposure to direct current, which can be presumably explained by electron–electron interaction enhancement after detaching nanostructures from the high-permittivity substrate.

  7. Calculation of W for low energy electrons in tissue-equivalent gas. [<10 keV

    Energy Technology Data Exchange (ETDEWEB)

    Dayashankar, [Bhabha Atomic Research Centre, Bombay (India). Div. of Radiation Protection

    1977-11-01

    The mean energy expended per ion pair formed (W-value) in the tissue-equivalent gas for incident electrons of energy up to 10 keV has been calculated in the continuous slowing-down approximation. The effect of secondary and tertiary electrons has been considered by utilizing recent measurements of Opal et al., (1971, J. Chem. Phys., 55,4100) on the energy spectra of low-energy secondary electrons and the Mott formula for the spectra of high-energy secondaries. The results, which are provisional in nature due to the limitations on the accuracy of the input cross-section data and the neglect of the discrete nature of energy loss process, are compared with the available measurements.

  8. Brightness measurement of an electron impact gas ion source for proton beam writing applications

    Energy Technology Data Exchange (ETDEWEB)

    Liu, N.; Santhana Raman, P. [Centre for Ion Beam Applications, Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583 (Singapore); Xu, X.; Pang, R.; Kan, J. A. van, E-mail: phyjavk@nus.edu.sg [Centre for Ion Beam Applications, Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Khursheed, A. [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583 (Singapore)

    2016-02-15

    We are developing a high brightness nano-aperture electron impact gas ion source, which can create ion beams from a miniature ionization chamber with relatively small virtual source sizes, typically around 100 nm. A prototype source of this kind was designed and successively micro-fabricated using integrated circuit technology. Experiments to measure source brightness were performed inside a field emission scanning electron microscope. The total output current was measured to be between 200 and 300 pA. The highest estimated reduced brightness was found to be comparable to the injecting focused electron beam reduced brightness. This translates into an ion reduced brightness that is significantly better than that of conventional radio frequency ion sources, currently used in single-ended MeV accelerators.

  9. Quantum pump effect induced by a linearly polarized microwave in a two-dimensional electron gas.

    Science.gov (United States)

    Song, Juntao; Liu, Haiwen; Jiang, Hua

    2012-05-30

    A quantum pump effect is predicted in an ideal homogeneous two-dimensional electron gas (2DEG) that is normally irradiated by linearly polarized microwaves (MW). Without considering effects from spin-orbital coupling or the magnetic field, it is found that a polarized MW can continuously pump electrons from the longitudinal to the transverse direction, or from the transverse to the longitudinal direction, in the central irradiated region. The large pump current is obtained for both the low frequency limit and the high frequency case. Its magnitude depends on sample properties such as the size of the radiated region, the power and frequency of the MW, etc. Through the calculated results, the pump current should be attributed to the dominant photon-assisted tunneling processes as well as the asymmetry of the electron density of states with respect to the Fermi energy.

  10. Epitaxial CdSe-Au nanocrystal heterostructures by thermal annealing.

    Science.gov (United States)

    Figuerola, Albert; van Huis, Marijn; Zanella, Marco; Genovese, Alessandro; Marras, Sergio; Falqui, Andrea; Zandbergen, Henny W; Cingolani, Roberto; Manna, Liberato

    2010-08-11

    The thermal evolution of a collection of heterogeneous CdSe-Au nanosystems (Au-decorated CdSe nanorods, networks, vertical assemblies) prepared by wet-chemical approaches was monitored in situ in the transmission electron microscope. In contrast to interfaces that are formed during kinetically controlled wet chemical synthesis, heating under vacuum conditions results in distinct and well-defined CdSe/Au interfaces, located at the CdSe polar surfaces. The high quality of these interfaces should make the heterostructures more suitable for use in nanoscale electronic devices.

  11. Spin-polarized electron gas in Co2MSi/SrTiO3(M= Ti, V, Cr, Mn, and Fe) heterostructures

    KAUST Repository

    Nazir, S.; Schwingenschlö gl, Udo

    2016-01-01

    Spin-polarized density functional theory is used to study the TiO2 terminated interfaces between the magnetic Heusler alloys Co2Si (M = Ti, V, Cr, Mn, and Fe) and the non-polar band insulator SrTiO3. The structural relaxation at the interface turns

  12. Laterally Stitched Heterostructures of Transition Metal Dichalcogenide: Chemical Vapor Deposition Growth on Lithographically Patterned Area

    KAUST Repository

    Li, Henan

    2016-10-31

    Two-dimensional transition metal dichalcogenides (TMDCs) have shown great promise in electronics and optoelectronics due to their unique electrical and optical properties. Heterostructured TMDC layers such as the laterally stitched TMDCs offer the advantages of better electronic contact and easier band offset tuning. Here, we demonstrate a photoresist-free focused ion beam (FIB) method to pattern as-grown TMDC monolayers by chemical vapor deposition, where the exposed edges from FIB etching serve as the seeds for growing a second TMDC material to form desired lateral heterostructures with arbitrary layouts. The proposed lithographic and growth processes offer better controllability for fabrication of the TMDC heterostrucuture, which enables the construction of devices based on heterostructural monolayers. © 2016 American Chemical Society.

  13. Large current modulation and spin-dependent tunneling of vertical graphene/MoS2 heterostructures.

    Science.gov (United States)

    Myoung, Nojoon; Seo, Kyungchul; Lee, Seung Joo; Ihm, G

    2013-08-27

    Vertical graphene heterostructures have been introduced as an alternative architecture for electronic devices by using quantum tunneling. Here, we present that the current on/off ratio of vertical graphene field-effect transistors is enhanced by using an armchair graphene nanoribbon as an electrode. Moreover, we report spin-dependent tunneling current of the graphene/MoS2 heterostructures. When an atomically thin MoS2 layer sandwiched between graphene electrodes becomes magnetic, Dirac fermions with different spins feel different heights of the tunnel barrier, leading to spin-dependent tunneling. Our finding will develop the present graphene heterostructures for electronic devices by improving the device performance and by adding the possibility of spintronics based on graphene.

  14. Defect Formation and Electronic Transport at AlGaN/GaN Interfaces

    International Nuclear Information System (INIS)

    Haller, E.E.; Hsu, Leonardo; Walukiewicz, W.

    1997-01-01

    We have calculated the effects of charged defects located near an Al x Ga 1-x N/GaN heterointerface on the transport properties of the two dimensional electron gas confined at the interface and also determined the distribution of those defects taking into consideration the dependence of the formation energy on the Fermi level. In addition, we have investigated the effects of hydrostatic pressure on such modulation doped heterostructures and find that pressure can be used to make the determination of the properties of the two dimensional electron gas easier by eliminating parallel three dimensional conduction paths

  15. Long wave polar modes in semiconductor heterostructures

    CERN Document Server

    Trallero-Giner, C; García-Moliner, F; Garc A-Moliner, F; Perez-Alvarez, R; Garcia-Moliner, F

    1998-01-01

    Long Wave Polar Modes in Semiconductor Heterostructures is concerned with the study of polar optical modes in semiconductor heterostructures from a phenomenological approach and aims to simplify the model of lattice dynamics calculations. The book provides useful tools for performing calculations relevant to anyone who might be interested in practical applications. The main focus of Long Wave Polar Modes in Semiconductor Heterostructures is planar heterostructures (quantum wells or barriers, superlattices, double barrier structures etc) but there is also discussion on the growing field of quantum wires and dots. Also to allow anyone reading the book to apply the techniques discussed for planar heterostructures, the scope has been widened to include cylindrical and spherical geometries. The book is intended as an introductory text which guides the reader through basic questions and expands to cover state-of-the-art professional topics. The book is relevant to experimentalists wanting an instructive presentatio...

  16. The nonextensive parameter for nonequilibrium electron gas in an electromagnetic field

    International Nuclear Information System (INIS)

    Yu, Haining; Du, Jiulin

    2014-01-01

    The nonextensive parameter for nonequilibrium electron gas of the plasma in an electromagnetic field is studied. We exactly obtained an expression of the q-parameter based on Boltzmann kinetic theories for plasmas, where Coulombian interactions and Lorentz forces play dominant roles. We show that the q-parameter different from unity is related by an equation to temperature gradient, electric field strength, magnetic induction as well as overall bulk velocity of the gas. The effect of the magnetic field on the q-parameter depends on the overall bulk velocity. Thus the q-parameter for the electron gas in an electromagnetic field represents the nonequilibrium nature or nonisothermal configurations of the plasma with electromagnetic interactions. - Highlights: • An expression of the q-parameter is obtained for nonequilibrium plasma with electromagnetic interactions. • The q-parameter is related to temperature gradient, electric field strength, magnetic induction as well as overall bulk velocity of the plasma. • The q-parameter represents the nonequilibrium nature of the complex plasma with electromagnetic interactions

  17. Desulfurization reaction of high sulfur content flue gas treated by electron beam

    International Nuclear Information System (INIS)

    Hirosawa, Shojiro; Suzuki, Ryoji; Aoki, Shinji; Kojima, Takuji; Hashimoto, Shoji

    2002-01-01

    Experiments of flue gas treatment by electron beam were carried out, using simulated ligniteburning flue gas containing SO 2 (5500 ppm), NO (390 ppm) and H 2 O (22%). Removal efficiency of SO 2 was more than 90% at a dose of 1-2 kGy. It shows applicability of electron beam for treatment of lignite-burning flue gas. Another removal reaction besides the radiation-induced radical reaction and the thermal reaction occurring without irradiation was suggested by the facts that removal of SO 2 by the radical reaction is only a few hundreds of ppm and the removal amounts by thermal reaction under irradiation is lower than a half of total desulfurization. The mechanism similar to thermal reaction was proposed, assuming simultaneous uptake reaction of SO 2 and NH 3 on the surface of liquid aerosol. It was suggested that ammonium nitrate having deliquescence relative humidity (DRH) of 60% at 25 deg C plays an important role in producing liquid aerosols. Decrease of DRH of ammonium nitrate with elevating temperature and with formation of double salt of ammonium sulfate results in enhancement of formation of liquid aerosols. (author)

  18. The nonextensive parameter for nonequilibrium electron gas in an electromagnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Haining; Du, Jiulin, E-mail: jldu@tju.edu.cn

    2014-11-15

    The nonextensive parameter for nonequilibrium electron gas of the plasma in an electromagnetic field is studied. We exactly obtained an expression of the q-parameter based on Boltzmann kinetic theories for plasmas, where Coulombian interactions and Lorentz forces play dominant roles. We show that the q-parameter different from unity is related by an equation to temperature gradient, electric field strength, magnetic induction as well as overall bulk velocity of the gas. The effect of the magnetic field on the q-parameter depends on the overall bulk velocity. Thus the q-parameter for the electron gas in an electromagnetic field represents the nonequilibrium nature or nonisothermal configurations of the plasma with electromagnetic interactions. - Highlights: • An expression of the q-parameter is obtained for nonequilibrium plasma with electromagnetic interactions. • The q-parameter is related to temperature gradient, electric field strength, magnetic induction as well as overall bulk velocity of the plasma. • The q-parameter represents the nonequilibrium nature of the complex plasma with electromagnetic interactions.

  19. Spatial profiling of ion and neutral excitation in noble gas electron cyclotron resonance plasmas

    International Nuclear Information System (INIS)

    Rhoades, R.L.; Gorbatkin, S.M.

    1994-01-01

    Optical emission from neutrals and ions of several noble gases has been profiled in an electron cyclotron resonance plasma system. In argon plasmas with a net microwave power of 750 W, the neutral (696.5-nm) and ion (488-nm) emission profiles are slightly center peaked at 0.32 mTorr and gradually shift to a hollow appearance at 2.5 mTorr. Neon profiles show a similar trend from 2.5 to 10.0 mTorr. For the noble gases, transition pressure scales with the ionization potential of the gas, which is consistent with neutral depletion. Studies of noble gas mixtures, however, indicate that neutral depletion is not always dominant in the formation of hollow profiles. For Kr/Ar, Ar/Ne, and Ne/He plasmas, the majority gas tends to set the overall shape of the profile at any given pressure. For the conditions of the current system, plasma density appears to be more dominant than electron temperature in the formation of hollow profiles. The general method described is also a straightforward, inexpensive technique for measuring the spatial distribution of power deposited in plasmas, particularly where absolute scale can be calibrated by some other means

  20. Temperature Dependence of the Spin-Hall Conductivity of a Two-Dimensional Impure Rashba Electron Gas in the Presence of Electron-Phonon and Electron-Electron Interactions

    Science.gov (United States)

    Yavari, H.; Mokhtari, M.; Bayervand, A.

    2015-03-01

    Based on Kubo's linear response formalism, temperature dependence of the spin-Hall conductivity of a two-dimensional impure (magnetic and nonmagnetic impurities) Rashba electron gas in the presence of electron-electron and electron-phonon interactions is analyzed theoretically. We will show that the temperature dependence of the spin-Hall conductivity is determined by the relaxation rates due to these interactions. At low temperature, the elastic lifetimes ( and are determined by magnetic and nonmagnetic impurity concentrations which are independent of the temperature, while the inelastic lifetimes ( and related to the electron-electron and electron-phonon interactions, decrease when the temperature increases. We will also show that since the spin-Hall conductivity is sensitive to temperature, we can distinguish the intrinsic and extrinsic contributions.

  1. The analog of Blanc's law for drift velocities of electrons in gas mixtures in weakly ionized plasma

    International Nuclear Information System (INIS)

    Chiflikian, R.V.

    1995-01-01

    The analog of Blanc's law for drift velocities of electrons in multicomponent gas mixtures in weakly ionized spatially homogeneous low-temperature plasma is derived. The obtained approximate-analytical expressions are valid for average electron energy in the 1--5 eV range typical for plasma conditions of low-pressure direct current (DC) discharges. The accuracy of these formulas is ±5%. The analytical criterion of the negative differential conductivity (NDC) of electrons in binary mixtures of gases is obtained. NDC of electrons is predicted in He:Kr and He:Xe rare gas mixtures. copyright 1995 American Institute of Physics

  2. Electron microscopic studies of natural gas oxidation catalyst – Effects of thermally accelerated aging on catalyst microstructure

    DEFF Research Database (Denmark)

    Honkanen, Mari; Hansen, Thomas Willum; Jiang, Hua

    2017-01-01

    Structural changes of PtPd nanoparticles in a natural gas oxidation catalyst were studied at elevated temperatures in air and low-oxygen conditions and in situ using environmental transmission electron microscopy (ETEM). The fresh catalyst shows

  3. Homogeneous CdTe quantum dots-carbon nanotubes heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Vieira, Kayo Oliveira [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Bettini, Jefferson [Laboratório Nacional de Nanotecnologia, Centro Nacional de Pesquisa em Energia e Materiais, CEP 13083-970, Campinas, SP (Brazil); Ferrari, Jefferson Luis [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Schiavon, Marco Antonio, E-mail: schiavon@ufsj.edu.br [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil)

    2015-01-15

    The development of homogeneous CdTe quantum dots-carbon nanotubes heterostructures based on electrostatic interactions has been investigated. We report a simple and reproducible non-covalent functionalization route that can be accomplished at room temperature, to prepare colloidal composites consisting of CdTe nanocrystals deposited onto multi-walled carbon nanotubes (MWCNTs) functionalized with a thin layer of polyelectrolytes by layer-by-layer technique. Specifically, physical adsorption of polyelectrolytes such as poly (4-styrene sulfonate) and poly (diallyldimethylammonium chloride) was used to deagglomerate and disperse MWCNTs, onto which we deposited CdTe quantum dots coated with mercaptopropionic acid (MPA), as surface ligand, via electrostatic interactions. Confirmation of the CdTe quantum dots/carbon nanotubes heterostructures was done by transmission and scanning electron microscopies (TEM and SEM), dynamic-light scattering (DLS) together with absorption, emission, Raman and infrared spectroscopies (UV–vis, PL, Raman and FT-IR). Almost complete quenching of the PL band of the CdTe quantum dots was observed after adsorption on the MWCNTs, presumably through efficient energy transfer process from photoexcited CdTe to MWCNTs. - Highlights: • Highly homogeneous CdTe-carbon nanotubes heterostructures were prepared. • Simple and reproducible non-covalent functionalization route. • CdTe nanocrystals homogeneously deposited onto multi-walled carbon nanotubes. • Efficient energy transfer process from photoexcited CdTe to MWCNTs.

  4. M = Mo, W; X = S, Se, Te) heterostructures

    KAUST Repository

    Zhang, Qingyun

    2018-04-16

    Using first-principles calculations, we investigate the electronic properties of the two-dimensional GaX/MX2 (M = Mo, W; X = S, Se, Te) heterostructures. Orbital hybridization between GaX and MX2 is found to result in Rashba splitting at the valence-band edge around the Γ point, which grows for increasing strength of the spin-orbit coupling in the p orbitals of the chalcogenide atoms. The location of the valence-band maximum in the Brillouin zone can be tuned by strain and application of an out-of-plane electric field. The coexistence of Rashba splitting (in-plane spin direction) and band splitting at the K and K′ valleys (out-of-plane spin direction) makes GaX/MX2 heterostructures interesting for spintronics and valleytronics. They are promising candidates for two-dimensional spin-field-effect transistors and spin-valley Hall effect devices. Our findings shed light on the spin-valley coupling in van der Waals heterostructures.

  5. High-efficiency super capacitors based on hetero-structured α-MnO{sub 2} nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Ghouri, Zafar Khan [Department of BIN Fusion Technology, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Department of Organic materials and Fiber Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Shaheer Akhtar, M. [New & Renewable Energy Material Development Center (NewREC), Chonbuk National University, Jeonbuk (Korea, Republic of); Zahoor, Awan [Department of Chemical Engineering, NED University of Engineering & Technology, University Road, Karachi 75270 (Pakistan); Barakat, Nasser A.M., E-mail: nasser@jbnu.ac.kr [Department of Organic materials and Fiber Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Department of Chemical Engineering, Faculty of Engineering, El-Minia University, El-Minia (Egypt); Han, Weidong [Department of BIN Fusion Technology, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Park, Mira [Department of Organic materials and Fiber Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Pant, Bishweshwar; Saud, Prem Singh; Lee, Cho Hye [Department of BIN Fusion Technology, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Kim, Hak Yong, E-mail: khy@jbnu.ac.kr [Department of BIN Fusion Technology, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

    2015-09-05

    Highlights: • Hetero-structured α-MnO{sub 2} nanorods are prepared by a facile hydrothermal route. • It is applied as active electrode materials for supercapacitor. • A high specific capacitance of 298 Fg{sup −1} with a superior long term cyclic stability is achieved. • Supercapacitor shows high specific capacitance retention 94% after 1000 cycles. - Abstract: Hetero-structured manganese dioxide nanorods with α phase (α-MnO{sub 2}) were prepared by a facile hydrothermal route at low temperature. X-ray diffraction, scanning electron microscopy, transmission electron microscopy and nitrogen adsorption–desorption measurements were used to characterize the prepared hetero-structured α-MnO{sub 2} nanorods. Supercapacitive performance of the hetero-structured α-MnO{sub 2} nanomaterials as active electrode material was evaluated by cyclic voltammetry (CV) in alkaline medium. The MnO{sub 2} hetero-structure with 2 × 2 tunnels constructed from double chains of octahedral [MnO{sub 6}] structure yield a significantly high specific capacitance of 298 Fg{sup −1} at 5 mV s{sup −1} and demonstrated a superior long term cyclic stability, with specific capacitance retention about 94% after 1000 cycles. The superior supercapacitive performance of the hetero-structured α-MnO{sub 2} electrode is due to its high specific surface area and unique hierarchy architecture which facilitate fast electron and ion transport.

  6. Influence of the electric polarization on carrier transport and recombinaton dynamics in ZnO-based heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Brandt, Matthias

    2010-08-16

    The present thesis deals with the influence of the electric polarization on properties of free carriers in ZnO-based semiconductor heterostructures. Thereby especially transport properties of free carriers as well as their recombination dynamics are studied. The thesis treats four main topics. The first main topic lies on the phsical properties of the applied materials, here the connection of the band gap and the lattice constant of thin Mg{sub x}Zn{sub 1-x}O films and their magnesium content is described. Furthermore the morphology of such films is discussed. Different substrates and deposition conditions are thereby detailedly considered. The second main topic treats the properties of undoped and phosphorus doped thin ZnO and Mg{sub x}Zn{sub 1-x}O films. The structural, transport, and luminescence properties are here compared and conclusions drawn on the growth conditions. In the third main topic quantum effects on ZnO/Mg{sub x}Zn{sub 1-x}O interfaces are treated. Hereby especially the influence of the electric polarization is considered. The presence of a two-dimensional electron gas is proved, and the necessary conditions for the generation of the so-called confined Stark effect are explained. Especially the growth-relevant parameters are considered. The fourth main topic represent coupling phenomena in ZnO/BaTiO{sub 3} heterostructures. Thereby first the experimentally observed properties of different heterostructures are shown, which were grown on different substrates. Here structural and transport properties hold the spotlight. A model for the description of the formation of space-charge zones in such heterostructures is introduced and applied for the description of the experimental results. The usefulness of the ferroelectric properties of the material BaTiO{sub 3} in combination with semiconducting ZnO were studied. For this ferroelectric field effect transistors were fabricated under application of both materials. The principle suitedness of the

  7. Templated synthesis of nickel nanoparticles: Toward heterostructured nanocomposites for efficient hydrogen storage

    Energy Technology Data Exchange (ETDEWEB)

    Nelson, Nicholas Cole [Iowa State Univ., Ames, IA (United States)

    2013-01-01

    The world is currently facing an energy and environmental crisis for which new technologies are needed. Development of cost-competitive materials for catalysis and hydrogen storage on-board motor vehicles is crucial to lead subsequent generations into a more sustainable and energy independent future. This thesis presents work toward the scalable synthesis of bimetallic heterostructures that can enable hydrogen to compete with carbonaceous fuels by meeting the necessary gravimetric and volumetric energy densities and by enhancing hydrogen sorption/desorption kinetics near ambient temperatures and pressures. Utilizing the well-known phenomenon of hydrogen spillover, these bimetallic heterostructures could work by lowering the activation energy for hydrogenation and dehydrogenation of metals. Herein, we report a novel method for the scalable synthesis of silica templated zero-valent nickel particles (Ni$\\subset$ SiO2) that hold promise for the synthesis of nickel nanorods for use in bimetallic heterostructures for hydrogen storage. Our synthesis proceeds by chemical reduction of a nickel-hydrazine complex with sodium borohydride followed by calcination under hydrogen gas to yield silica encapsulated nickel particles. Transmission electron microscopy and powder X-ray diffraction were used to characterize the general morphology of the resultant nanocapsules as well as the crystalline phases of the incorporated Ni0 nanocrystals. The structures display strong magnetic behavior at room temperature and preliminary data suggests nickel particle size can be controlled by varying the amount of nickel precursor used in the synthesis. Calcination under different environments and TEM analysis provides evidence for an atomic migration mechanism of particle formation. Ni$\\subset$SiO2 nanocapsules were used as seeds to induce heterogeneous nucleation and subsequent growth within the nanocapsule via electroless nickel plating. Nickel nanoparticle

  8. Thiobenzamide: Structure of a free molecule as studied by gas electron diffraction and quantum chemical calculations

    Science.gov (United States)

    Kolesnikova, Inna N.; Putkov, Andrei E.; Rykov, Anatolii N.; Shishkov, Igor F.

    2018-06-01

    The equilibrium (re) molecular structure of thiobenzamide along with rh1 structure has been determined in gas phase using gas electron-diffraction (GED) at about 127 °C and quantum-chemical calculations (QC). Rovibrational distance corrections to the thermal averaged GED structure have been computed with anharmonic force constants obtained at the MP2/cc-pVTZ level of theory. According to the results of GED and QC thiobenzamide exists as mixture of two non-planar enantiomers of C1 symmetry. The selected equilibrium geometrical parameters of thiobenzamide (re, Å and ∠e, deg) are the following: (Cdbnd S) = 1.641(4), (Csbnd N) = 1.352(2), (Csbnd C) = 1.478(9), (Cdbnd C)av = 1.395(2), CCN = 114.7(5), CCS = 123.4(5), C2C1C7S = 31(4), C6C1C7N = 29(4). The structure of thiobenzamide in the gas phase is markedly different to that in the literature for the single crystal. The differences between the gas and the solid structures are ascribed to the presence of intermolecular hydrogen bonding in the solid phase.

  9. Hot gas cleaning in power stations by using electron beam technology. Influence on PAH emissions

    International Nuclear Information System (INIS)

    Callen, M.S.; de la Cruz, M.T.; Mastral, A.M.; Murillo, R.; Marinov, S.; Stefanova, M.

    2007-01-01

    The Electron Beam Technology (EBT), proven treatment for SO 2 and NO x removal, is applied to different power stations as a hot gas cleaning system. In this paper, an assessment of this technique installed in a Bulgarian power station on organic emissions is analyzed. The Polycyclic Aromatic Hydrocarbons (PAH) content, not only emitted in the gas phase but also trapped in the solid phase, has been carried out before and after the irradiation. The main aim has been to know whether the EBT affects organic emissions, like PAH, as it happens with inorganic pollutants, like SO 2 and NO x , studying EBT effects from an organic environmental point of view. The PAH quantification was performed by using a very sensitive analytical technique, gas chromatography with mass spectrometry mass spectrometry detection (GC-MS-MS). Results showed that PAH are influenced by the EBT showing a reduction of the most volatile PAH in the gas phase. With regard to the solid by-products obtained after the irradiation, fertilizers, similar PAH concentration to the fly ashes produced when no irradiation is applied were found. These fertilizers were considered like unpolluted soils being adequate for agriculture applications with PAH concentrations below the target value set up by the Dutch government. (author)

  10. Current instabilities under HF electron gas heating in semiconductors with negative differential conductivity

    Energy Technology Data Exchange (ETDEWEB)

    Gurevich, Yu. G.; Logvinov, G. N. [Instituto Politecnico Nacional, Mexico, D.F. (Mexico); Laricheva, N. [Datmouth College, New Hampshire (United States); Mashkevich, O. L. [Kharkov University, Kharkov (Ukraine)

    2001-10-01

    A nonlinear temperature dependence of the kinetic coefficients of semiconductor plasma can result in the appearance of regions of negative differential conductivity (NDC) in both the high-frequency (HF) and static current-voltage characteristics (CVC). In the present paper the formation of the static NDC under simultaneous electron gas heating by HF and static electric field is studied. As is shown below, in this case the heating electromagnetic wave has a pronounced effect on the appearance of NDC caused by the overheating mechanisms and the type of the static CVC as a whole. [Spanish] Una dependencia no lineal de la temperatura de los coeficientes cineticos del plasma del semiconductor puede llevar a la aparicion de regiones con conductividad diferencial negativa (CDN) en las caracteristicas corriente voltaje (CCV) de alta frecuencia (AF) y estatica. En este articulo se estudia la formacion de la CDN estatica bajo la accion simultanea del calentamiento del gas de electrones por AF y el campo electrico estatico. Como se muestra mas adelante, en este caso la onda electromagnetica que calienta a los electrones ejerce un fuerte efecto en la aparicion de la CDN; que se obtiene por mecanismos de sobrecalentamiento, y en el tipo de CCV estatica.

  11. Experimental and theoretical study of the electron cascade induced in a gas by laser light

    International Nuclear Information System (INIS)

    Louis-Jacquet, Michel.

    1978-10-01

    In a laser gas interaction experiment, first electrons created by multiphoton ionization of atoms gain sufficient energy in the laser E.M. wave to promote collisional ionization of other atoms. An experimental and theoretical study of the electron-neutral atom inverse bremsstrahlung process and the consecutive electron cascade is presented. The main basic idea is to create an initial electron population and to study its evolution versus the photon density. A Boltzman equation including several collision terms can describe such a plasma. The resolution by a general eigen values method shows that the electron density growth rate is inversely proportionnal to both neutral atom density and laser light illumination. Experimental conditions were defined in order to insure negligible secondary mechanisms (multiphoton ionization, diffusion, recombination, ...). Using a macroscopic description of the interaction, the growth rate can be deduced from the experimental results. Values are in a rather good agreement with the theoretical ones. Moreover evidence is given of influence of the excited atoms on the multiplication process [fr

  12. Development of Electron Tracking Compton Camera using micro pixel gas chamber for medical imaging

    Energy Technology Data Exchange (ETDEWEB)

    Kabuki, Shigeto; Hattori, Kaori [Department of Physics, Faculty of Science, Kyoto University, Sakyo-ku, Kyoto 606-8502 (Japan); Kohara, Ryota [Hitachi Medical Corporation, Kashiwa, Chiba 277-0804 (Japan); Kunieda, Etsuo; Kubo, Atsushi [Department of Radiography, Keio University, Shinjuku-ku, Tokyo 160-8582 (Japan); Kubo, Hidetoshi; Miuchi, Kentaro [Department of Physics, Faculty of Science, Kyoto University, Sakyo-ku, Kyoto 606-8502 (Japan); Nakahara, Tadaki [Department of Radiography, Keio University, Shinjuku-ku, Tokyo 160-8582 (Japan); Nagayoshi, Tsutomu; Nishimura, Hironobu; Okada, Yoko; Orito, Reiko; Sekiya, Hiroyuki [Department of Physics, Faculty of Science, Kyoto University, Sakyo-ku, Kyoto 606-8502 (Japan); Shirahata, Takashi [Hitachi Medical Corporation, Kashiwa, Chiba 277-0804 (Japan); Takada, Atsushi [Department of Physics, Faculty of Science, Kyoto University, Sakyo-ku, Kyoto 606-8502 (Japan); Tanimori, Toru [Department of Physics, Faculty of Science, Kyoto University, Sakyo-ku, Kyoto 606-8502 (Japan)], E-mail: tanimori@cr.scphys.kyoto-u.ac.jp; Ueno, Kazuki [Department of Physics, Faculty of Science, Kyoto University, Sakyo-ku, Kyoto 606-8502 (Japan)

    2007-10-01

    We have developed the Electron Tracking Compton Camera (ETCC) with reconstructing the 3-D tracks of the scattered electron in Compton process for both sub-MeV and MeV gamma rays. By measuring both the directions and energies of not only the recoil gamma ray but also the scattered electron, the direction of the incident gamma ray is determined for each individual photon. Furthermore, a residual measured angle between the recoil electron and scattered gamma ray is quite powerful for the kinematical background rejection. For the 3-D tracking of the electrons, the Micro Time Projection Chamber ({mu}-TPC) was developed using a new type of the micro pattern gas detector. The ETCC consists of this {mu}-TPC (10x10x8 cm{sup 3}) and the 6x6x13 mm{sup 3} GSO crystal pixel arrays with a flat panel photo-multiplier surrounding the {mu}-TPC for detecting recoil gamma rays. The ETCC provided the angular resolution of 6.6 deg. (FWHM) at 364 keV of {sup 131}I. A mobile ETCC for medical imaging, which is fabricated in a 1 m cubic box, has been operated since October 2005. Here, we present the imaging results for the line sources and the phantom of human thyroid gland using 364 keV gamma rays of {sup 131}I.

  13. Assessment of pesticide residues in some fruits using gas chromatography coupled with micro electron capture detector

    International Nuclear Information System (INIS)

    Latif, Y.; Sherazi, S.T.H.; Bhanger, M.I.

    2011-01-01

    A very sensitive analytical method for the determination of 26 pesticides in some fruits based on solid phase extraction (SPE) cleanup was developed using gas chromatography (GC) coupled with micro electron capture detector (mu ECD). The identity of the pesticides was confirmed by gas chromatography mass spectroscopy (GC-MS) using selected ion monitoring (SIM) mode. Ethyl acetate was used as a solvent for the extraction of pesticide residues with assistance of sonication. For cleanup an octadecyl, C18 SPE column was used. A linear response of mu ECD was observed for all pesticides with good correlation coefficients (>0.9992). Proposed method was successfully applied for the determination of pesticide residues in the orange, apple, and grape fruits. Average recoveries achieved for all of the pesticides at fortification levels of 0.05, 1.0 and 2.0 mu g g/sup -1/ in analyzed fruits were above 90% with relative standard deviations (RSD) less than 6%. (author)

  14. Gas electron multiplier (GEM) foil test, repair and effective gain calculation

    Science.gov (United States)

    Tahir, Muhammad; Zubair, Muhammad; Khan, Tufail A.; Khan, Ashfaq; Malook, Asad

    2018-06-01

    The focus of my research is based on the gas electron multiplier (GEM) foil test, repairing and effective gain calculation of GEM detector. During my research work define procedure of GEM foil testing short-circuit, detection short-circuits in the foil. Study different ways to remove the short circuits in the foils. Set and define the GEM foil testing procedures in the open air, and with nitrogen gas. Measure the leakage current of the foil and applying different voltages with specified step size. Define the Quality Control (QC) tests and different components of GEM detectors before assembly. Calculate the effective gain of GEM detectors using 109Cd and 55Fe radioactive source.

  15. Determination of nitrosourea compounds in brain tissue by gas chromatography and electron capture detection.

    Science.gov (United States)

    Hassenbusch, S J; Colvin, O M; Anderson, J H

    1995-07-01

    A relatively simple, high-sensitivity gas chromatographic assay is described for nitrosourea compounds, such as BCNU [1,3-bis(2-chloroethyl)-1-nitrosourea] and MeCCNU [1-(2-chloroethyl)-3-(trans-4-methylcyclohexyl)-1-nitrosourea], in small biopsy samples of brain and other tissues. After extraction with ethyl acetate, secondary amines in BCNU and MeCCNU are derivatized with trifluoroacetic anhydride. Compounds are separated and quantitated by gas chromatography using a capillary column with temperature programming and an electron capture detector. Standard curves of BCNU indicate a coefficient of variance of 0.066 +/- 0.018, a correlation coefficient of 0.929, and an extraction efficiency from whole brain of 68% with a minimum detectable amount of 20 ng in 5-10 mg samples. The assay has been facile and sensitive in over 1000 brain biopsy specimens after intravenous and intraarterial infusions of BCNU.

  16. Detection of irradiated fruits and vegetables by gas-chromatographic methods and electron spin-resonance

    Energy Technology Data Exchange (ETDEWEB)

    Farag, S.E.A. (National Centre for Radiation Research and Technology, Cairo (Egypt))

    1993-01-01

    Gas chromatographic methods detected some hydrocarbons esp. 17:1, 16:2, 15:0 and 14:1 in irradiated, Avocado, Papaya, Mangoes with 0.75, 1.5, 3.0 kGy and Apricot with 0.5 and 3.0 kGy. The detection of hydrocarbons was clearly at high doses but the low doses need more sensitive conditions using Liquid-Liquid-Gas chromatographic method as used here. Using Electron Spin-Resonance, produce a specific signal from irradiated onion (dried leaves) as well as apricot (hard coat of kernels) after some weeks of irradiation process but not clear with the other foodstuffs. (orig.)

  17. AlGaN/GaN heterostructures with an AlGaN layer grown directly on reactive-ion-etched GaN showing a high electron mobility (>1300 cm2 V-1 s-1)

    Science.gov (United States)

    Yamamoto, Akio; Makino, Shinya; Kanatani, Keito; Kuzuhara, Masaaki

    2018-04-01

    In this study, the metal-organic-vapor-phase-epitaxial growth behavior and electrical properties of AlGaN/GaN structures prepared by the growth of an AlGaN layer on a reactive-ion-etched (RIE) GaN surface without regrown GaN layers were investigated. The annealing of RIE-GaN surfaces in NH3 + H2 atmosphere, employed immediately before AlGaN growth, was a key process in obtaining a clean GaN surface for AlGaN growth, that is, in obtaining an electron mobility as high as 1350 cm2 V-1 s-1 in a fabricated AlGaN/RIE-GaN structure. High-electron-mobility transistors (HEMTs) were successfully fabricated with AlGaN/RIE-GaN wafers. With decreasing density of dotlike defects observed on the surfaces of AlGaN/RIE-GaN wafers, both two-dimensional electron gas properties of AlGaN/RIE-GaN structures and DC characteristics of HEMTs were markedly improved. Since dotlike defect density was markedly dependent on RIE lot, rather than on growth lot, surface contaminations of GaN during RIE were believed to be responsible for the formation of dotlike defects and, therefore, for the inferior electrical properties.

  18. Modified Monte Carlo method for study of electron transport in degenerate electron gas in the presence of electron-electron interactions, application to graphene

    Science.gov (United States)

    Borowik, Piotr; Thobel, Jean-Luc; Adamowicz, Leszek

    2017-07-01

    Standard computational methods used to take account of the Pauli Exclusion Principle into Monte Carlo (MC) simulations of electron transport in semiconductors may give unphysical results in low field regime, where obtained electron distribution function takes values exceeding unity. Modified algorithms were already proposed and allow to correctly account for electron scattering on phonons or impurities. Present paper extends this approach and proposes improved simulation scheme allowing including Pauli exclusion principle for electron-electron (e-e) scattering into MC simulations. Simulations with significantly reduced computational cost recreate correct values of the electron distribution function. Proposed algorithm is applied to study transport properties of degenerate electrons in graphene with e-e interactions. This required adapting the treatment of e-e scattering in the case of linear band dispersion relation. Hence, this part of the simulation algorithm is described in details.

  19. Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy

    International Nuclear Information System (INIS)

    Ravikiran, L.; Radhakrishnan, K.; Yiding, Lin; Ng, G. I.; Dharmarasu, N.; Agrawal, M.; Arulkumaran, S.; Vicknesh, S.

    2015-01-01

    To improve the confinement of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) heterostructures, AlGaN/GaN/AlGaN double heterojunction HEMT (DH-HEMT) heterostructures were grown using ammonia-MBE on 100-mm Si substrate. Prior to the growth, single heterojunction HEMT (SH-HEMT) and DH-HEMT heterostructures were simulated using Poisson-Schrödinger equations. From simulations, an AlGaN buffer with “Al” mole fraction of 10% in the DH-HEMT was identified to result in both higher 2DEG concentration (∼10 13  cm −2 ) and improved 2DEG confinement in the channel. Hence, this composition was considered for the growth of the buffer in the DH-HEMT heterostructure. Hall measurements showed a room temperature 2DEG mobility of 1510 cm 2 /V.s and a sheet carrier concentration (n s ) of 0.97 × 10 13  cm −2 for the DH-HEMT structure, while they are 1310 cm 2 /V.s and 1.09 × 10 13  cm −2 , respectively, for the SH-HEMT. Capacitance-voltage measurements confirmed the improvement in the confinement of 2DEG in the DH-HEMT heterostructure, which helped in the enhancement of its room temperature mobility. DH-HEMT showed 3 times higher buffer break-down voltage compared to SH-HEMT, while both devices showed almost similar drain current density. Small signal RF measurements on the DH-HEMT showed a unity current-gain cut-off frequency (f T ) and maximum oscillation frequency (f max ) of 22 and 25 GHz, respectively. Thus, overall, DH-HEMT heterostructure was found to be advantageous due to its higher buffer break-down voltages compared to SH-HEMT heterostructure

  20. OPENING ADDRESS: Heterostructures in Semiconductors

    Science.gov (United States)

    Grimmeiss, Hermann G.

    1996-01-01

    Good morning, Gentlemen! On behalf of the Nobel Foundation, I should like to welcome you to the Nobel Symposium on "Heterostructures in Semiconductors". It gives me great pleasure to see so many colleagues and old friends from all over the world in the audience and, in particular, to bid welcome to our Nobel laureates, Prof. Esaki and Prof. von Klitzing. In front of a different audience I would now commend the scientific and technological importance of heterostructures in semiconductors and emphatically emphasise that heterostructures, as an important contribution to microelectronics and, hence, information technology, have changed societies all over the world. I would also mention that information technology is one of the most important global key industries which covers a wide field of important areas each of which bears its own character. Ever since the invention of the transistor, we have witnessed a fantastic growth in semiconductor technology, leading to more complex functions and higher densities of devices. This development would hardly be possible without an increasing understanding of semiconductor materials and new concepts in material growth techniques which allow the fabrication of previously unknown semiconductor structures. But here and today I will not do it because it would mean to carry coals to Newcastle. I will therefore not remind you that heterostructures were already suggested and discussed in detail a long time before proper technologies were available for the fabrication of such structures. Now, heterostructures are a foundation in science and part of our everyday life. Though this is certainly true, it is nevertheless fair to say that not all properties of heterostructures are yet understood and that further technologies have to be developed before a still better understanding is obtained. The organisers therefore hope that this symposium will contribute not only to improving our understanding of heterostructures but also to opening new

  1. Proximity coupling in superconductor-graphene heterostructures

    Science.gov (United States)

    Lee, Gil-Ho; Lee, Hu-Jong

    2018-05-01

    This review discusses the electronic properties and the prospective research directions of superconductor-graphene heterostructures. The basic electronic properties of graphene are introduced to highlight the unique possibility of combining two seemingly unrelated physics, superconductivity and relativity. We then focus on graphene-based Josephson junctions, one of the most versatile superconducting quantum devices. The various theoretical methods that have been developed to describe graphene Josephson junctions are examined, together with their advantages and limitations, followed by a discussion on the advances in device fabrication and the relevant length scales. The phase-sensitive properties and phase-particle dynamics of graphene Josephson junctions are examined to provide an understanding of the underlying mechanisms of Josephson coupling via graphene. Thereafter, microscopic transport of correlated quasiparticles produced by Andreev reflections at superconducting interfaces and their phase-coherent behaviors are discussed. Quantum phase transitions studied with graphene as an electrostatically tunable 2D platform are reviewed. The interplay between proximity-induced superconductivity and the quantum-Hall phase is discussed as a possible route to study topological superconductivity and non-Abelian physics. Finally, a brief summary on the prospective future research directions is given.

  2. Graphene/black phosphorus heterostructured photodetector

    Science.gov (United States)

    Xu, Jiao; Song, Young Jae; Park, Jin-Hong; Lee, Sungjoo

    2018-06-01

    Graphene photodetectors exhibit a low photoresponsivity due to their weak light absorbance. In this study, we fabricated a graphene/black phosphorus (BP) heterostructure, in which the multilayer BP flake with a ∼0.3 eV direct band gap functions as an enhanced light-absorption material. Further, the photoexcited electrons are trapped in the trap states of the BP, which creates a photogating effect and causes holes to flow into the graphene layer driven by the built-in potential between BP and graphene. The photocarrier lifetime is therefore prolonged by trapping, and as a result of the high carrier mobility of graphene, the holes that transfer into the graphene channel can travel through the circuit before they recombine with trapped electrons. These combined effects result in a high photoresponsivity: 55.75 A/W at λ = 655 nm, 1.82 A/W at λ = 785 nm, and 0.66 A/W at λ = 980 nm.

  3. Integral and local density of states of InAs quantum dots in GaAs/AlGaAs heterostructure observed by ballistic electron emission spectroscopy near one-electron ground state

    Czech Academy of Sciences Publication Activity Database

    Walachová, Jarmila; Zelinka, Jiří; Leshkov, Sergey; Šroubek, Filip; Pangrác, Jiří; Vaniš, Jan

    2013-01-01

    Roč. 48, č. 1 (2013), s. 61-65 ISSN 1386-9477 R&D Projects: GA ČR GPP102/11/P824; GA ČR GAP102/10/1201 Institutional research plan: CEZ:AV0Z10100521 Institutional support: RVO:67985882 ; RVO:68378271 ; RVO:67985556 Keywords : quantum dots * scanning tunneling microscopy * ballistic transport Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.856, year: 2013

  4. The free electron gas primary thermometer using an ordinary bipolar junction transistor approaches ppm accuracy

    Science.gov (United States)

    Mimila-Arroyo, J.

    2017-06-01

    In this paper, it is demonstrated that the free electron gas primary thermometer based on a bipolar junction transistor is able to provide the temperature with an accuracy of a few parts per million. Its simple functioning principle exploits the behavior of the collector current when properly biased to extract the temperature. Using general purpose silicon transistors at the water triple point (273.16 K) and gallium melting point (302.9146), an accuracy of a few parts per million has been reached, constituting the simplest and the easiest to operate primary thermometer, that might be considered even for the redefinition of Kelvin.

  5. Hydrodynamic model for 2D degenerate free-electron gas for arbitrary frequencies

    CERN Document Server

    Castillo, M D; Cocoletzi, G H

    2003-01-01

    Following Halevi's procedure for 3D degenerate free-electron gas (3D-DEG), we investigate the response function in the hydrodynamic model (HM) for 2D-DEG confined in low dimensional systems when collisions are included. For small wave vectors we found from the two- dimensional Boltzmann-Mermin model a useful expression for the HM complex stiffness parameter of the nonlocal dielectric function beta, which is beta = [((3 omega/ 4) + i(v/ 2)) / (w + iv)]v sub F , where omega and v are the circular and collisional frequencies and v sub F is the Fermi velocity. (Author)

  6. A study on an electronically controlled liquefied petroleum gas diesel dual-fuel automobile

    Energy Technology Data Exchange (ETDEWEB)

    Chunhua Zhang; Yaozhang Bian; Lizeng Si; Junzhi Liao; Odbileg, N. [Chang' an Univ., Automobile Faculty, Xi' an (China)

    2005-02-15

    In this paper, the control scheme of a liquefied petroleum gas (LPG)-diesel dual-fuel engine with electronic control is illustrated, the external characteristics and load characteristics of the LPG-diesel dual-fuel engine and the diesel engine are compared and analysed, and the results of automobile road tests are also given. The experimental results show that, compared with diesel, the output performance of dual fuel is not reduced, while smoke emission of dual fuel is significantly reduced, NO{sub x} emission of dual fuel is hardly changed, but HC emission and CO emission of dual fuel are increased and fuel consumption of dual fuel is reduced. (Author)

  7. Development of a time projection chamber using gas electron multipliers (GEM-TPC)

    International Nuclear Information System (INIS)

    Oda, S.X.; Hamagaki, H.; Ozawa, K.; Inuzuka, M.; Sakaguchi, T.; Isobe, T.; Gunji, T.; Morino, Y.; Saito, S.; Yamaguchi, Y.L.; Sawada, S.; Yokkaichi, S.

    2006-01-01

    We developed a prototype time projection chamber using gas electron multipliers (GEM-TPC) for high energy heavy ion collision experiments. To investigate its performance, we conducted a beam test with three kinds of gases (Ar(90%)-CH 4 (10%), Ar(70%)-C 2 H 6 (30%) and CF 4 ). Detection efficiency of 99%, and spatial resolution of 79μm in the pad-row direction and 313μm in the drift direction were achieved. The test results show that the GEM-TPC meets the requirements for high energy heavy ion collision experiments. The configuration and performance of the GEM-TPC are described

  8. Hydrodynamic theory for quantum plasmonics: Linear-response dynamics of the inhomogeneous electron gas

    DEFF Research Database (Denmark)

    Yan, Wei

    2015-01-01

    We investigate the hydrodynamic theory of metals, offering systematic studies of the linear-response dynamics for an inhomogeneous electron gas. We include the quantum functional terms of the Thomas-Fermi kinetic energy, the von Weizsa¨cker kinetic energy, and the exchange-correlation Coulomb...... energies under the local density approximation. The advantages, limitations, and possible improvements of the hydrodynamic theory are transparently demonstrated. The roles of various parameters in the theory are identified. We anticipate that the hydrodynamic theory can be applied to investigate the linear...... response of complex metallic nanostructures, including quantum effects, by adjusting theory parameters appropriately....

  9. Electron-Impact Excitation Cross Sections for Modeling Non-Equilibrium Gas

    Science.gov (United States)

    Huo, Winifred M.; Liu, Yen; Panesi, Marco; Munafo, Alessandro; Wray, Alan; Carbon, Duane F.

    2015-01-01

    In order to provide a database for modeling hypersonic entry in a partially ionized gas under non-equilibrium, the electron-impact excitation cross sections of atoms have been calculated using perturbation theory. The energy levels covered in the calculation are retrieved from the level list in the HyperRad code. The downstream flow-field is determined by solving a set of continuity equations for each component. The individual structure of each energy level is included. These equations are then complemented by the Euler system of equations. Finally, the radiation field is modeled by solving the radiative transfer equation.

  10. Magneto-spin Hall conductivity of a two-dimensional electron gas

    OpenAIRE

    Milletari', M.; Raimondi, R.; Schwab, P.

    2008-01-01

    It is shown that the interplay of long-range disorder and in-plane magnetic field gives rise to an out-of-plane spin polarization and a finite spin Hall conductivity of the two-dimensional electron gas in the presence of Rashba spin-orbit coupling. A key aspect is provided by the electric-field induced in-plane spin polarization. Our results are obtained first in the \\textit{clean} limit where the spin-orbit splitting is much larger than the disorder broadening of the energy levels via the di...

  11. Spin injection into a two-dimensional electron gas using inter-digital-ferromagnetic contacts

    DEFF Research Database (Denmark)

    Hu, C.M.; Nitta, J.; Jensen, Ane

    2002-01-01

    We present a model that describes the spin injection across a single interface with two electrodes. The spin-injection rate across a typical hybrid junction made of ferromagnet (FM) and a two-dimensional electron gas (2DEG) is found at the percentage level. We perforin spin-injection-detection ex......-injection-detection experiment on devices with two ferromagnetic contacts on a 2DEG confined in an InAs quantum well. A spin-injection rate of 4.5% is estimated from the measured magnetoresistance....

  12. Industrial plant for flue gas cleaning with use of electron beam at the 'Pomorzany' Power Plant

    International Nuclear Information System (INIS)

    Chmielewski, A.G.; Tyminski, B.; Iller, E.; Zimek, Z.; Licki, J.; Kostrzewski, R.; Sobolewski, L.; Cybulski, J.

    2002-01-01

    Construction of the second in the world installation for fuel gas cleaning with the use of electron beam at the POMORZANY Power Plant has been completed in 2001 and test operation started. During the last year all the units of installation as well as measuring and control systems were tested and corrected. 200 t of a fertilizer have been produced in 2001 and ca. 31 t in January 2002. Emission of corresponding amount of acidic pollutants was reduced and the Power Plant POMORZANY paid lower fines for the emission. (author)

  13. New edge magnetoplasmon for a two-dimensional electron gas in a ring geometry

    International Nuclear Information System (INIS)

    Proetto, C.R.

    1992-09-01

    The dynamical response of a classical two-dimensional electron gas confined in a ring geometry under a perpendicular magnetic field is analysed. Within the hydrodynamical approach and in the strong magnetic field limit, a new set of antidot edge magnetoplasmons is obtained, corresponding to density oscillations circulating along the inner boundary of the ring and whose frequency increases with magnetic field. The associated self-induced distribution of densities and currents are presented, together with an analysis of the size dependence of these perimeter waves. (author). 15 refs, 4 figs

  14. Probing Protein Structure and Folding in the Gas Phase by Electron Capture Dissociation

    Science.gov (United States)

    Schennach, Moritz; Breuker, Kathrin

    2015-07-01

    The established methods for the study of atom-detailed protein structure in the condensed phases, X-ray crystallography and nuclear magnetic resonance spectroscopy, have recently been complemented by new techniques by which nearly or fully desolvated protein structures are probed in gas-phase experiments. Electron capture dissociation (ECD) is unique among these as it provides residue-specific, although indirect, structural information. In this Critical Insight article, we discuss the development of ECD for the structural probing of gaseous protein ions, its potential, and limitations.

  15. Electron probe micro-analysis of gas bubbles in solids: a novel approach

    International Nuclear Information System (INIS)

    Verwerft, M.; Vos, B.

    1999-01-01

    The local analysis of retained noble gas in nuclear fuel is inherently difficult since the physical form under which it is stored varies from atomically dispersed to bubbles with a diameter of several hundreds of nanometers. One of the techniques that has been applied since pore than twenty years is EPMA. Although many important results have been obtained with this technique, its application to the analysis of highly inhomogeneous materials is limited. The EPMA technique is indeed difficult to apply to samples that are not homogeneous on the scale of the electron-solid interaction volume. The paper discusses the development of a method to analyse a system of as bubbles distributed in a solid matrix. This method has been based on a multiple voltage EPMA measurement combined with a scanning Electron Microscopic analysis of the bubble size distribution

  16. Measurements of electron density and temperature profiles in a gas blanket experiment

    International Nuclear Information System (INIS)

    Kuthy, A.

    1979-02-01

    Radial profiles of electron density, temperature and H sub(β) intensity are presented for the rotating plasma device F-1. The hydrogen filling pressure, the average magnetic field strength at the midplane, and the power input to the discharge have been varied in the ranges 10-100 mTorr, 0.25-0.5 Tesla, and 0.1 to 1.5 MW, respectively. These experiments have been performed with the main purpose of studying the gas blanket (cold-mantle) state of the plasma. It is shown, that a simple spectroscopic method can be used to derive the radial distribution of the electron temperature in such plasmas. The observed peak temperatures and densities are in agreement with earlier theoretical estimates. (author)

  17. Study of Electron Swarm in High Pressure Hydrogen Gas Filled RF Cavities

    International Nuclear Information System (INIS)

    Yonehara, K.; Chung, M.; Jansson, A.; Moretti, A.; Popovic, M.; Tollestrup, A.; Alsharo'a, M.; Johnson, R.P.; Notani, M.; Oka, T.; Wang, H.

    2010-01-01

    A high pressure hydrogen gas filled RF cavity has been proposed for use in the muon collection system for a muon collider. It allows for high electric field gradients in RF cavities located in strong magnetic fields, a condition frequently encountered in a muon cooling channel. In addition, an intense muon beam will generate an electron swarm via the ionization process in the cavity. A large amount of RF power will be consumed into the swarm. We show the results from our studies of the HV RF breakdown in a cavity without a beam and present some results on the resulting electron swarm dynamics. This is preliminary to actual beam tests which will take place late in 2010.

  18. UPS and DFT investigation of the electronic structure of gas-phase trimesic acid

    Energy Technology Data Exchange (ETDEWEB)

    Reisberg, L., E-mail: rebban@ut.ee [Institute of Physics, University of Tartu, W. Oswaldi 1, EE-50411 Tartu (Estonia); Pärna, R. [Institute of Physics, University of Tartu, W. Oswaldi 1, EE-50411 Tartu (Estonia); MAX IV Laboratory, Lund University, Fotongatan 2, 225 94 Lund (Sweden); Kikas, A.; Kuusik, I.; Kisand, V. [Institute of Physics, University of Tartu, W. Oswaldi 1, EE-50411 Tartu (Estonia); Hirsimäki, M.; Valden, M. [Surface Science Laboratory, Optoelectronics Research Centre, Tampere University of Technology, FIN-33101 Tampere (Finland); Nõmmiste, E. [Institute of Physics, University of Tartu, W. Oswaldi 1, EE-50411 Tartu (Estonia)

    2016-11-15

    Highlights: • In the current study outer valence band electronic structure of benzene-1,3,5-tricarboxylic acid was interpreted. • Experimental and calculated trimesic acid (TMA) spectrum were compared to ones of benzene and benzoic acid. • It is shown that similarities between MO energies and shapes for benzene and TMA exists. • Addition of carboxyl groups to the benzene ring clearly correlates with increasing binding energy of HOMO. - Abstract: Benzene-1,3,5-tricarboxylic acid (trimesic acid, TMA) molecules in gas-phase have been investigated by using valence band photoemission. The photoelectron spectrum in the binding energy region from 9 to 22 eV is interpreted by using density functional theory calculations. The electronic structure of TMA is compared with benzene and benzoic acid in order to demonstrate changes in molecular orbital energies induced by addition of carboxyl groups to benzene ring.

  19. Nonlinear screening effect in an ultrarelativistic degenerate electron-positron gas

    International Nuclear Information System (INIS)

    Tsintsadze, N. L.; Rasheed, A.; Shah, H. A.; Murtaza, G.

    2009-01-01

    Nonlinear screening process in an ultrarelativistic degenerate electron-positron gas has been investigated by deriving a generalized nonlinear Poisson equation for the electrostatic potential. In the simple one-dimensional case, the nonlinear Poisson equation leads to Debye-like (Coulomb-like) solutions at distances larger (less) than the characteristic length. When the electrostatic energy is larger than the thermal energy, this nonlinear Poisson equation converts into the relativistic Thomas-Fermi equation whose asymptotic solution in three dimensions shows that the potential field goes to zero at infinity much more slowly than the Debye potential. The possibility of the formation of a bound state in electron-positron plasma is also indicated. Further, it is investigated that the strong spatial fluctuations of the potential field may reduce the screening length and that the root mean square of this spatial fluctuating potential goes to zero for large r rather slowly as compared to the case of the Debye potential.

  20. Electron beam test of an iron/gas calorimeter based on ceramic parallel plate chambers

    International Nuclear Information System (INIS)

    Arefiev, A.; Bencze, Gy.L.; Bizzeti, A.; Choumilov, E.; Civinini, C; Dalla Santa, F.; D'Alessandro, R.; Ferrando, A.; Fouz, M.C.; Herve, A.; Iglesias, A.; Ivochkin, V.; Josa, M.I.; Maggi, F.; Malinin, A.; Meschini, M.; Pojidaev, V.; Radermacher, E.; Salicio, J.M.

    1995-01-01

    The baseline option for the very forward calorimetry in the CMS experiment is an iron/gas calorimeter based on parallel plate chambers. A small prototype module of such a calorimeter, has been tested using electrons of 5 to 100 GeV/c momentum with various high voltages and two gases: CO2 (100%) and CF4/CO2 (80/20), at atmospheric pressure. The collected charge has been measured as a function of the high voltage and of the electron energy. The energy resolution has also been measured. Comparisons have been made with Monte-Carlo predictions. Agreement between data an simulation allows to make and estimation of the expected performance of a full size calorimeter. (Author) 23 refs

  1. Electron beam test of an iron/gas calorimeter based on ceramic parallel plate chambers

    International Nuclear Information System (INIS)

    Arefiev, A.; Bencze, G.L.; Bizzeti, A.; choumilov, E.; Civinini, C.; Dalla Santa, F.; D'Alessandro, R.; Ferrando, A.; Fouz, M.C.; Herve, A.; Iglesias, A.; Ivochkin, V.; Josa, M.I.; Maggi, F.; Malininin, A.; Meschini, M.; Pojidaev, V.; Radermacher, E.; Salicio, J.M.

    1995-12-01

    The baseline option for the very forward calorimetry in the CMS experiment is an iron/gas calorimeter based on parallel plate chambers. A small prototype module of such a calorimeter, has been tested using electrons of 5 to 100 GeV/c momentum with various high voltages and two gases: CO 2 (100%) and CF 4 /CO 2 (80/20), at atmospheric pressure. The collected charge has been measured as a function of the high voltage and of the electron energy. The energy resolution has also been measured. Comparisons have been made with Monte-Carlo predictions. Agreement between data an simulation allows to make and estimation of the expected performance of a full size calorimeter. (Author)

  2. The HERMES polarized hydrogen and deuterium gas target in the HERA electron storage ring

    International Nuclear Information System (INIS)

    Airapetian, A.; Akopov, N.; Akopov, Z.

    2005-01-01

    The HERMES hydrogen and deuterium nuclear-polarized gas targets have been in use since 1996 with the polarized electron beam of HERA at DESY to study the spin structure of the nucleon. Polarized atoms from a Stern-Gerlach Atomic Beam Source are injected into a storage cell internal to the HERA electron ring. Atoms diffusing from the center of the storage cell into a side tube are analyzed to determine the atomic fraction and the atomic polarizations. The atoms have a nuclear polarization, the axis of which is defined by an external magnetic holding field. The holding field was longitudinal during 1996-2000, and was changed to transverse in 2001. The design of the target is described, the method for analyzing the target polarization is outlined, and the performance of the target in the various running periods is presented

  3. The HERMES polarized hydrogen and deuterium gas target in the HERA electron storage ring

    International Nuclear Information System (INIS)

    Airapetian, A.; Akopov, N.; Akopov, Z.; Peking University, Beijing

    2004-08-01

    The HERMES hydrogen and deuterium nuclear-polarized gas targets have been in use since 1996 with the polarized electron beam of HERA at DESY to study the spin structure of the nucleon. Polarized atoms from a Stern-Gerlach Atomic Beam Source are injected into a storage cell internal to the HERA electron ring. Atoms diffusing from the center of the storage cell into a side tube are analyzed to determine the atomic fraction and the atomic polarizations. The atoms have a nuclear polarization, the axis of which is defined by an external magnetic holding field. The holding field was longitudinal during 1996-2000, and was changed to transverse in 2001. The design of the target is described, the method for analyzing the target polarization is outlined, and the performance of the target in the various running periods is presented. (orig.)

  4. A method for measuring the local gas pressure within a gas-flow stage in situ in the transmission electron microscope

    International Nuclear Information System (INIS)

    Colby, R.; Alsem, D.H.; Liyu, A.; Kabius, B.

    2015-01-01

    Environmental transmission electron microscopy (TEM) has enabled in situ experiments in a gaseous environment with high resolution imaging and spectroscopy. Addressing scientific challenges in areas such as catalysis, corrosion, and geochemistry can require pressures much higher than the ∼20 mbar achievable with a differentially pumped environmental TEM. Gas flow stages, in which the environment is contained between two semi-transparent thin membrane windows, have been demonstrated at pressures of several atmospheres. However, the relationship between the pressure at the sample and the pressure drop across the system is not clear for some geometries. We demonstrate a method for measuring the gas pressure at the sample by measuring the ratio of elastic to inelastic scattering and the defocus of the pair of thin windows. This method requires two energy filtered high-resolution TEM images that can be performed during an ongoing experiment, at the region of interest. The approach is demonstrated to measure greater than atmosphere pressures of N 2 gas using a commercially available gas-flow stage. This technique provides a means to ensure reproducible sample pressures between different experiments, and even between very differently designed gas-flow stages. - Highlights: • Method developed for measuring gas pressure within a gas-flow stage in the TEM. • EFTEM and CTF-fitting used to calculate amount and volume of gas. • Requires only a pair of images without leaving region of interest. • Demonstrated for P > 1 atm with a common commercial gas-flow stage

  5. On the role of the gas environment, electron-dose-rate, and sample on the image resolution in transmission electron microscopy

    DEFF Research Database (Denmark)

    Ek, Martin; Jespersen, Sebastian Pirel Fredsgaard; Damsgaard, Christian Danvad

    2016-01-01

    on the electron-dose-rate. In this article, we demonstrate that both the total and areal electron-dose-rates work as descriptors for the dose-rate-dependent resolution and are related through the illumination area. Furthermore, the resolution degradation was observed to occur gradually over time after......The introduction of gaseous atmospheres in transmission electron microscopy offers the possibility of studying materials in situ under chemically relevant environments. The presence of a gas environment can degrade the resolution. Surprisingly, this phenomenon has been shown to depend...... initializing the illumination of the sample and gas by the electron beam. The resolution was also observed to be sensitive to the electrical conductivity of the sample. These observations can be explained by a charge buildup over the electron-illuminated sample area, caused by the beam–gas–sample interaction...

  6. Ionization and breakdown of a low-density gas by a low-current nonrelativistic electron beam

    International Nuclear Information System (INIS)

    Alanakyan, Yu.R.; Shternov, N.P.

    1991-01-01

    In the present paper the authors study a plasma formed near a steady-state electron beam traveling in an unbounded low-pressure gas. Beam parameters below and at the breakdown threshold are considered, and the threshold beam parameters corresponding to gas breakdown with formation of a beam-plasma discharge are calculated. Theoretical studies of electron beam propagation in an unbounded gas are of interest in connection with rocket-borne atmospheric experiments laboratory investigations, and observations of natural phenomena in the upper atmosphere (aurora borealis and related phenomena)

  7. Synthesis of core-shell heterostructured Cu/Cu2O nanowires monitored by in situ XRD as efficient visible-light photocatalysts

    KAUST Repository

    Chen, Wei; Fan, Zhongli; Lai, Zhiping

    2013-01-01

    strategy for fabricating efficiently core-shell heterostructured nanowires and provides the potential for developing their applications in electronic devices, for environmental remediation and in solar energy utilization fields. This journal is © The Royal

  8. Band Alignment in MoS2/WS2 Transition Metal Dichalcogenide Heterostructures Probed by Scanning Tunneling Microscopy and Spectroscopy.

    Science.gov (United States)

    Hill, Heather M; Rigosi, Albert F; Rim, Kwang Taeg; Flynn, George W; Heinz, Tony F

    2016-08-10

    Using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS), we examine the electronic structure of transition metal dichalcogenide heterostructures (TMDCHs) composed of monolayers of MoS2 and WS2. STS data are obtained for heterostructures of varying stacking configuration as well as the individual monolayers. Analysis of the tunneling spectra includes the influence of finite sample temperature, yield information about the quasi-particle bandgaps, and the band alignment of MoS2 and WS2. We report the band gaps of MoS2 (2.16 ± 0.04 eV) and WS2 (2.38 ± 0.06 eV) in the materials as measured on the heterostructure regions and the general type II band alignment for the heterostructure, which shows an interfacial band gap of 1.45 ± 0.06 eV.

  9. plasma modes behaviors and electron injection influence in an audio-ultrasonic air gas discharge

    International Nuclear Information System (INIS)

    Ragheb, M.S.; Haleem, N.A.

    2010-01-01

    the main purpose of this study is to investigate the favorable conditions for the production of plasma particle acceleration in an audio-ultrasonic air gas discharge of 20 cm long and 34 mm diameter.it is found that according to the applied conditions the formed plasma changes its behavior and overtakes diverse modes of different characteristics. the pressure, the voltage, and the frequency applied to the plasma determine its proper state. both experimental data collection and optical observations are introduced to clarify and to put in evidence the present plasma facts. the distribution of the electrons density along the plasma tube draws in average the electric field distribution of the ionization waves. in addition, the plasma is studied with and without electrons injection in order to investigate its influence . it is found that the electron injection decreases the plasma intensity and the plasma temperature, while it increases the discharge current. in turn, the decrease of the plasma temperature decreases the plasma oscillations and enhances the plasma instability. on the other hand,the enhancement of the plasma instability performs good conditions for electron acceleration. as a result, the qualified mode for particles acceleration is attained and its conditions are retrieved and defined for that purpose.

  10. Pulse length of ultracold electron bunches extracted from a laser cooled gas

    Directory of Open Access Journals (Sweden)

    J. G. H. Franssen

    2017-07-01

    Full Text Available We present measurements of the pulse length of ultracold electron bunches generated by near-threshold two-photon photoionization of a laser-cooled gas. The pulse length has been measured using a resonant 3 GHz deflecting cavity in TM110 mode. We have measured the pulse length in three ionization regimes. The first is direct two-photon photoionization using only a 480 nm femtosecond laser pulse, which results in short (∼15 ps but hot (∼104 K electron bunches. The second regime is just-above-threshold femtosecond photoionization employing the combination of a continuous-wave 780 nm excitation laser and a tunable 480 nm femtosecond ionization laser which results in both ultracold (∼10 K and ultrafast (∼25 ps electron bunches. These pulses typically contain ∼103 electrons and have a root-mean-square normalized transverse beam emittance of 1.5 ± 0.1 nm rad. The measured pulse lengths are limited by the energy spread associated with the longitudinal size of the ionization volume, as expected. The third regime is just-below-threshold ionization which produces Rydberg states which slowly ionize on microsecond time scales.

  11. Test beam results of a low-pressure micro-strip gas chamber with a secondary-electron emitter

    International Nuclear Information System (INIS)

    Kwan, S.; Anderson, D.F.; Zimmerman, J.; Sbarra, C.; Salomon, M.

    1994-10-01

    We present recent results, from a beam test, on the angular dependence of the efficiency and the distribution of the signals on the anode strips of a low-pressure microstrip gas chamber with a thick CsI layer as a secondary-electron emitter. New results of CVD diamond films as secondary-electron emitters are discussed

  12. Synthesis of Won-WX2 (n=2.7, 2.9; X=S, Se) Heterostructures for Highly Efficient Green Quantum Dot Light-Emitting Diodes

    KAUST Repository

    Han, Shikui

    2017-07-04

    Preparation of two-dimensional (2D) heterostructures is important not only fundamentally, but also technologically for applications in electronics and optoelectronics. Herein, we report a facile colloidal method for the synthesis of WOn -WX2 (n=2.7, 2.9; X=S, Se) heterostructures by sulfurization or selenization of WOn nanomaterials. The WOn -WX2 heterostructures are composed of WO2.9 nanoparticles (NPs) or WO2.7 nanowires (NWs) grown together with single- or few-layer WX2 nanosheets (NSs). As a proof-of-concept application, the WOn -WX2 heterostructures are used as the anode interfacial buffer layer for green quantum dot light-emitting diodes (QLEDs). The QLED prepared with WO2.9 NP-WSe2 NS heterostructures achieves external quantum efficiency (EQE) of 8.53 %. To our knowledge, this is the highest efficiency in the reported green QLEDs using inorganic materials as the hole injection layer.

  13. Investigation of the Electron Acceleration by a High-Power Laser and a Density-Tapered Mixed-Gas Cell

    Science.gov (United States)

    Kim, Jinju; Phung, Vanessa L. J.; Kim, Minseok; Hur, Min-Sup; Suk, Hyyong

    2017-10-01

    Plasma-based accelerators can generate about 1000 times stronger acceleration field compared with RF-based conventional accelerators, which can be done by high power laser and plasma. There are many issues in this research and one of them is development of a good plasma source for higher electron beam energy. For this purpose, we are investigating a special type of plasma source, which is a density-tapered gas cell with a mixed-gas for easy injection. By this type of special gas cell, we expect higher electron beam energies with easy injection in the wakefield. In this poster, some experimental results for electron beam generation with the density-tapered mixed-gas cell are presented. In addition to the experimental results, CFD (Computational-Fluid-Dynamics) and PIC (Particle-In-Cell) simulation results are also presented for comparison studies.

  14. Calculation of Ground State Rotational Populations for Kinetic Gas Homonuclear Diatomic Molecules including Electron-Impact Excitation and Wall Collisions

    International Nuclear Information System (INIS)

    Farley, David R.

    2010-01-01

    A model has been developed to calculate the ground-state rotational populations of homonuclear diatomic molecules in kinetic gases, including the effects of electron-impact excitation, wall collisions, and gas feed rate. The equations are exact within the accuracy of the cross sections used and of the assumed equilibrating effect of wall collisions. It is found that the inflow of feed gas and equilibrating wall collisions can significantly affect the rotational distribution in competition with non-equilibrating electron-impact effects. The resulting steady-state rotational distributions are generally Boltzmann for N (ge) 3, with a rotational temperature between the wall and feed gas temperatures. The N = 0,1,2 rotational level populations depend sensitively on the relative rates of electron-impact excitation versus wall collision and gas feed rates.

  15. A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor

    DEFF Research Database (Denmark)

    Hu, Yongjie; Churchill, Hugh; Reilly, David

    2007-01-01

    Coupled electron spins in semiconductor double quantum dots hold promise as the basis for solid-state qubits. To date, most experiments have used III-V materials, in which coherence is limited by hyperfine interactions. Ge/Si heterostructure nanowires seem ideally suited to overcome this limitati...

  16. Towards realization of quantitative atmospheric and industrial gas sensing using THz wave electronics

    Science.gov (United States)

    Tekawade, Aniket; Rice, Timothy E.; Oehlschlaeger, Matthew A.; Mansha, Muhammad Waleed; Wu, Kefei; Hella, Mona M.; Wilke, Ingrid

    2018-06-01

    The potential of THz wave electronics for miniaturized non-intrusive sensors for atmospheric, environmental, and industrial gases is explored. A THz wave spectrometer is developed using a radio-frequency multiplier source and a Schottky-diode detector. Spectral absorption measurements were made in a gas cell within a frequency range of 220-330 GHz at room temperature and subatmospheric pressures. Measurements are reported for pure acetonitrile (CH3CN), methanol (CH3OH), and ethanol (C2H5OH) vapors at 5 and 10 Torr and for methanol dilute in the air (0.75-3.0 mol%) at a pressure of 500 Torr. An absorbance noise floor of 10-3 was achieved for a single 10 s scan of the 220-330 GHz frequency domain. Measured absorption spectra for methanol/air agree well at collisional-broadened conditions with spectral simulations carried out using literature spectroscopic parameters. In contrast to the previous submillimeter wave research that has focused on spectral absorbance at extremely low pressures (mTorr), where transitions are in the Doppler limit, and the present study illustrates the applicability of THz electronics for gas sensing at pressures approaching those found in atmospheric and industrial environments.

  17. Gas adsorption, energetics and electronic properties of boron- and nitrogen-doped bilayer graphenes

    Energy Technology Data Exchange (ETDEWEB)

    Fujimoto, Yoshitaka, E-mail: fujimoto@stat.phys.titech.ac.jp [Department of Physics, Tokyo Institute of Technology, Oh-okayama, Meguro-ku, Tokyo 152-8551 (Japan); Saito, Susumu [Department of Physics, Tokyo Institute of Technology, Oh-okayama, Meguro-ku, Tokyo 152-8551 (Japan); International Research Center for Nanoscience and Quantum Physics, Tokyo Institute of Technology, 2-12-1 Oh-okayama, Meguro-ku, Tokyo 152-8551 (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8503 (Japan)

    2016-10-20

    We study stabilities and electronic properties of several environmental polluting or toxic gas molecules (CO, CO{sub 2}, NO, and NO{sub 2}) adsorbed on B and N atoms in bilayer graphene using first-principles electronic-structure calculations. We find that NO and NO{sub 2} molecules can be bound chemically on B-doped bilayer graphene with large adsorption energies, while CO and CO{sub 2} molecules are not adsorbed chemically on B-doped one. In the case of the N-doped graphene, all four gases do not bind with chemical bonds but adsorb rather physically with small adsorption energies at long distances between gases and graphene. The adsorptions of NO and NO{sub 2} molecules on B-doped bilayer graphene induce the acceptor states above the Fermi energy, and we also find that the charge transfer takes place when the NO and the NO{sub 2} molecules are adsorbed. Thereby, the B-doped bilayer graphene is expected to be useful for NO and NO{sub 2} gas sensor materials.

  18. Tuning the Electron Gas at an Oxide Heterointerface via Free Surface Charges

    Energy Technology Data Exchange (ETDEWEB)

    Bell, Christopher

    2011-08-11

    Oxide heterointerfaces are emerging as one of the most exciting materials systems in condensed matter science. One remarkable example is the LaAlO{sub 3}/SrTiO{sub 3} (LAO/STO) interface, a model system in which a highly mobile electron gas forms between two band insulators, exhibiting two dimensional superconductivity and unusual magnetotransport properties. An ideal tool to tune such an electron gas is the electrostatic field effect. In principle, the electrostatic field can be generated by bound charges due to polarization (as in the normal and ferroelectric field effects) or by adding excess free charge. In previous studies, a large modulation of the carrier density and mobility of the LAO/STO interface has been achieved using the normal field effect. However, little attention has been paid to the field effect generated by free charges. This issue is scarcely addressed, even in conventional semiconductor devices, since the free charges are typically not stable. Here, we demonstrate an unambiguous tuning of the LAO/STO interface conductivity via free surface charges written using conducting atomic force microscopy (AFM). The modulation of the carrier density was found to be reversible, nonvolatile and surprisingly large, {approx}3 x 10{sup 13} cm{sup -2}, comparable to the maximum modulation by the normal field effect. Our finding reveal the efficiency of free charges in controlling the conductivity of this oxide interface, and suggest that this technique may be extended more generally to other oxide systems.

  19. Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

    KAUST Repository

    Lin, Yu-Chuan; Ghosh, Ram Krishna; Addou, Rafik; Lu, Ning; Eichfeld, Sarah M.; Zhu, Hui; Li, Ming-Yang; Peng, Xin; Kim, Moon J.; Li, Lain-Jong; Wallace, Robert M.; Datta, Suman; Robinson, Joshua A.

    2015-01-01

    Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalcogenides: molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2). The realization of MoS2–WSe2–graphene and WSe2–MoS2–graphene heterostructures leads to resonant tunnelling in an atomically thin stack with spectrally narrow, room temperature negative differential resistance characteristics.

  20. The hot pick-up technique for batch assembly of van der Waals heterostructures

    DEFF Research Database (Denmark)

    Pizzocchero, Filippo; Gammelgaard, Lene; Jessen, Bjarke Sørensen

    2016-01-01

    The assembly of individual two-dimensional materials into van der Waals heterostructures enables the construction of layered three-dimensional materials with desirable electronic and optical properties. A core problem in the fabrication of these structures is the formation of clean interfaces...... between the individual two-dimensional materials which would affect device performance. We present here a technique for the rapid batch fabrication of van der Waals heterostructures, demonstrated by the controlled production of 22 mono-, bi- and trilayer graphene stacks encapsulated in hexagonal boron...