Synthesis and Suzuki Cross-Coupling Reactions of 2,6-Bis(trifluoromethyl)pyridine-4-boronic Acid Pinacol Ester

KAUST Repository

Batool, Farhat

2016-11-18

Iridium-catalyzed aromatic borylation provides quick one-step access to 2,6-bis(trifluoromethyl)pyridine-4-boronic acid pinacol ester. Suzuki couplings of this highly electron-deficient pyridine-4-boronic ester with various (hetero)aryl bromides was successfully carried out and the coupled products were obtained in 46–95% isolated yields. Double and triple Suzuki couplings, with dibromo- and tribromoarenes, respectively, were also achieved. Thus demonstrating that this pyridine-4-boronic ester can be a useful source for the installation of one of the strongest electron-withdrawing aromatic group in organic compounds. Copyright © 2016, Georg Thieme Verlag. All rights reserved.

Synthesis and Suzuki Cross-Coupling Reactions of 2,6-Bis(trifluoromethyl)pyridine-4-boronic Acid Pinacol Ester

KAUST Repository

Batool, Farhat; Emwas, Abdul-Hamid M.; Gao, Xin; Munawar, Munawar A.; Chotana, Ghayoor A.

2016-01-01

Iridium-catalyzed aromatic borylation provides quick one-step access to 2,6-bis(trifluoromethyl)pyridine-4-boronic acid pinacol ester. Suzuki couplings of this highly electron-deficient pyridine-4-boronic ester with various (hetero)aryl bromides was successfully carried out and the coupled products were obtained in 46–95% isolated yields. Double and triple Suzuki couplings, with dibromo- and tribromoarenes, respectively, were also achieved. Thus demonstrating that this pyridine-4-boronic ester can be a useful source for the installation of one of the strongest electron-withdrawing aromatic group in organic compounds. Copyright © 2016, Georg Thieme Verlag. All rights reserved.

Deficiência de boro na cultura do abacaxi 'Pérola' Boron deficiency in pineapple 'Pérola'

Directory of Open Access Journals (Sweden)

Susana Cristine Siebeneichler

2008-12-01

Full Text Available Vinte plantas de abacaxi "Pérola" foram cultivadas em vasos de plástico de 10 L, em casa de vegetação, com o objetivo de caracterizar os sintomas visuais de deficiência de B nas plantas e nos frutos. Os vasos continham areia de rio lavada cinco vezes com água comum e depois duas vezes com água desionizada. Dez plantas foram irrigadas com solução completa e, de outras dez, o B foi suprimido da solução cinco meses após o plantio. As plantas apresentaram crescimento vegetativo normal e formaram frutos normais. Após a colheita dos frutos, acompanhou-se a formação das mudas do tipo rebento e rebentão basal, onde se observou que as plantas cultivadas sem B formaram mais mudas do tipo rebento do que as plantas cultivadas com B. Na formação das mudas do tipo rebentão basal, não se observou o efeito da supressão do B. No cultivo da planta-soca e em rebentões basais, cultivados em solução nutritiva sem B, observaram-se sintomas de deficiência de B somente no período reprodutivo. Os sintomas de deficiência de B se caracterizaram por: frutos deformados e menores, com formação de excrescência cortiçosa ou secreção de goma entre os frutilhos, rachaduras entre estes preenchidas com excrescência cortiçosa. As mudas tipo filhote formadas nas plantas-soca apresentaram folhas com falhas na borda e pontas secas.Twenty pineapple "Pérola" plants were cultivated in 10L plastic pots in a greenhouse, with the objective of characterizing the visual symptoms of boron deficiency in the pineapple leaves and fruit. The pots contained river sand that was washed five times with common water and two times with deionized water. Ten plants were irrigated five months after planting with a complete nutrient solution and the other ten, without B in the solution. The plants presented regular vegetative growth and fruit formation. After the harvest of the fruit, the formation of shoot and suckers seedling types were accompanied, where it was

Electron microscopy study of radiation effects in boron carbide

International Nuclear Information System (INIS)

Stoto, T.

1987-03-01

Boron carbide is a disordered non-stoechiometric material with a strongly microtwinned polycristallyne microstructure. This ceramic is among the candidate materials for the first wall coating in fusion reactor and is used as a neutron absorber in the control rods of fast breeder reactors. The present work deals with the nature of radiation damage in this solid. Because of helium internal production, neutron irradiated boron carbide is affected by swelling and by a strong microcracking which can break up a pellet in fine powder. These processes are rather intensitive to the irradiation parameters (temperature, flux and even neutron spectrum). Transmission electron microscopy of samples irradiated by the fast neutrons of a reactor, the electrons of a high voltage electron microscope and of samples implanted with helium ions was used to understand the respective roles of helium and point defects in the processes of swelling and microcracking. The design of an irradiation chamber for helium implantation at controlled temperature from 600 to 1700 0 C was an important technical part of this work [fr

Tuning the electronic properties of armchair carbon nanoribbons by a selective boron doping

International Nuclear Information System (INIS)

Navarro-Santos, P; Ricardo-Chavez, J L; Lopez-Sandoval, R; Reyes-Reyes, M; Rivera, J L

2010-01-01

Armchair carbon nanoribbons (ACNRs) substitutionally doped with boron atoms are investigated in the framework of first-principles density functional theory. Different boron-boron arrangements and concentrations are considered in order to simulate possible aggregation patterns, their structural stability and electronic behavior are determined as a function of ribbon size. In agreement with previous studies, our results show that the dopant atoms have in general a preference for edge sites, but specific effects appear as a function of concentration that importantly modify the properties of the ribbons compared to the pristine case. Interesting tendencies are discovered as a function of dopant concentration that significantly affect the electronic properties of the ribbons. We have found that BC 3 island formation and edge doping are the most important factors for the structural stabilization of the ribbons with high boron concentration (>7%) whereas for the cases of low boron concentrations ( 3 island patterns give rise to highly localized B states on top of the Fermi level, resulting in semiconducting behavior. On the other hand, when the average distance between the B atoms increases beyond island stoichiometry, the localization of their states is reduced and the ribbons may become metallic due to a band crossing caused by the lowering of the Fermi level resulting from the positive charge doping. Thus, tuning the dopant interaction would be an appropriate way to tailor the electronic properties of the ribbons in a convenient manner in view of potential technological applications.

Electron Paramagnetic Resonance and X-ray Diffraction of Boron- and Phosphorus-Doped Nanodiamonds

Science.gov (United States)

Binh, Nguyen Thi Thanh; Dolmatov, V. Yu.; Lapchuk, N. M.; Shymanski, V. I.

2017-11-01

Powders of boron- and phosphorus-doped detonation nanodiamonds and sintered pellets of non-doped nanodiamond powders were studied using electron paramagnetic resonance and x-ray diffraction. Doping of detonation nanodiamond crystals with boron and phosphorus was demonstrated to be possible. These methods could be used to diagnose diamond nanocrystals doped during shock-wave synthesis.

Tuning the electronic properties of armchair carbon nanoribbons by a selective boron doping

Energy Technology Data Exchange (ETDEWEB)

Navarro-Santos, P; Ricardo-Chavez, J L; Lopez-Sandoval, R [Instituto Potosino de Investigacion Cientifica y Tecnologica, Camino a la presa San Jose 2055, San Luis Potosi 78216 (Mexico); Reyes-Reyes, M [Instituto de Investigacion en Comunicacion Optica, Universidad Autonoma de San Luis Potosi, Alvaro Obregon 64, San Luis Potosi 78000 (Mexico); Rivera, J L, E-mail: sandov@ipicyt.edu.m [Facultad de Ingenieria Quimica, Universidad Michoacana de San Nicolas de Hidalgo, Santiago Tapia 403, Morelia, Michoacan, 58000 (Mexico)

2010-12-22

Armchair carbon nanoribbons (ACNRs) substitutionally doped with boron atoms are investigated in the framework of first-principles density functional theory. Different boron-boron arrangements and concentrations are considered in order to simulate possible aggregation patterns, their structural stability and electronic behavior are determined as a function of ribbon size. In agreement with previous studies, our results show that the dopant atoms have in general a preference for edge sites, but specific effects appear as a function of concentration that importantly modify the properties of the ribbons compared to the pristine case. Interesting tendencies are discovered as a function of dopant concentration that significantly affect the electronic properties of the ribbons. We have found that BC{sub 3} island formation and edge doping are the most important factors for the structural stabilization of the ribbons with high boron concentration (>7%) whereas for the cases of low boron concentrations (<5%) the structural stabilities are similar. For all the doped cases, we have found that the BC{sub 3} island patterns give rise to highly localized B states on top of the Fermi level, resulting in semiconducting behavior. On the other hand, when the average distance between the B atoms increases beyond island stoichiometry, the localization of their states is reduced and the ribbons may become metallic due to a band crossing caused by the lowering of the Fermi level resulting from the positive charge doping. Thus, tuning the dopant interaction would be an appropriate way to tailor the electronic properties of the ribbons in a convenient manner in view of potential technological applications.

Deficiency and toxicity of boron: Alterations in growth, oxidative damage and uptake by citrange orange plants.

Science.gov (United States)

Shah, Asad; Wu, Xiuwen; Ullah, Abid; Fahad, Shah; Muhammad, Riaz; Yan, Lei; Jiang, Cuncang

2017-11-01

Boron (B) deficiency and toxicity are the major factors that affect plant growth and yield. The present study revealed the effect of B deficiency and toxicity on plant growth, morphology, physiology, and cell structure. A hydroponic culture experiment was conducted with five B levels, B deficient (B0), sufficient (B20, B10, B40) and toxic (B100). Our results show that both B deficient as well as excess level inhibit plant growth. In B deficiency, the major visible symptoms were appeared in roots, while B excess burned the leaf margin of older leaves. The antioxidant enzymes including superoxide dismutase (SOD), peroxidase (POD), catalase (CAT) and ascorbate peroxidase (APX) decreased at B deficiency and also decreased up to some extent at B excess, while in sufficient treatments, the higher antioxidant enzymes were found at B20. In addition, the MDA concentration decreased at B deficiency and increased with B concentration. Moreover, the photosynthetic rate, transpiration rate, stomatal conductance, leaf gas exchange and intercellular CO 2 were reduced at both B deficiency as well as excess and higher at sufficient B20 treatment significantly. The chlorophyll and carotenoid content increased at B20 treatment, while decreased at B deficiency and excess. The middle lamellae of cell wall were found thick at B excess and normal at B20. The current study revealed that B deficiency as well as excess concentration affect plant growth and various morpho-physiological processes. Copyright © 2017 Elsevier Inc. All rights reserved.

Analysis of Electron Thermal Diffusivity and Bootstrap Current in Ohmically Heated Discharges after Boronization in the HT-7 Tokamak

International Nuclear Information System (INIS)

Zhang, X.M.; Wan, B.N.

2005-01-01

Significant improvements of plasma performance after ICRF boronization have been achieved in the full range of HT-7 operation parameters. Electron power balance is analyzed in the steady state ohmic discharges of the HT-7 tokamak. The ratio of the total radiation power to ohmic input power increases with increasing the central line-averaged electron density, but decreases with plasma current. It is obviously decreased after wall conditioning. Electron heat diffusivity χ e deduced from the power balance analysis is reduced throughout the main plasma after boronization. χ e decreases with increasing central line-averaged electron density in the parameter range of our study. After boronization, the plasma current profile is broadened and a higher current can be easily obtained on the HT-7 tokamak experiment. It is expected that the fact that the bootstrap current increases after boronization will explain these phenomena. After boronization, the plasma pressure gradient and the electron temperature near the boundary are larger than before, these factors influencing that the ratio of bootstrap current to total plasma current increases from several percent to above 10%

Electronic structures and three-dimensional effects of boron-doped carbon nanotubes

International Nuclear Information System (INIS)

Koretsune, Takashi; Saito, Susumu

2008-01-01

We study boron-doped carbon nanotubes by first-principles methods based on the density functional theory. To discuss the possibility of superconductivity, we calculate the electronic band structure and the density of states (DOS) of boron-doped (10,0) nanotubes by changing the boron density. It is found that the Fermi level density of states D(ε F ) increases upon lowering the boron density. This can be understood in terms of the rigid band picture where the one-dimensional van Hove singularity lies at the edge of the valence band in the DOS of the pristine nanotube. The effect of three-dimensionality is also considered by performing the calculations for bundled (10,0) nanotubes and boron-doped double-walled carbon nanotubes (10,0)/(19,0). From the calculation of the bundled nanotubes, it is found that interwall dispersion is sufficiently large to broaden the peaks of the van Hove singularity in the DOS. Thus, to achieve the high D(ε F ) using the bundle of nanotubes with single chirality, we should take into account the distance from each nanotube. In the case of double-walled carbon nanotubes, we find that the holes introduced to the inner tube by boron doping spread also on the outer tube, while the band structure of each tube remains almost unchanged.

Hydrolytic Stability of Boronate Ester-Linked Covalent Organic Frameworks

KAUST Repository

Li, Huifang

2018-01-30

The stability of covalent organic frameworks (COFs) is essential to their applications. However, the common boronate ester-linked COFs are susceptible to attack by nucleophiles (such as water molecules) at the electron-deficient boron sites. To provide an understanding of the hydrolytic stability of the representative boronate ester-linked COF-5 and of the associated hydrolysis mechanisms, density functional theory (DFT) calculations were performed to characterize the hydrolysis reactions of the molecule formed by the condensation of 1,4-phenylenebis(boronic acid) (PBBA) and 2,3,6,7,10,11-hexahydroxytriphenylene (HHTP) monomers; two cases were considered, one dealing with the freestanding molecule and the other with the molecule interacting with COF layers. It was found that the boronate ester (B–O) bond dissociation, which requires one H2O molecule, has a relatively high energy barrier of 22.3 kcal mol−1. However, the presence of an additional H2O molecule significantly accelerates hydrolysis by reducing the energy barrier by a factor of 3. Importantly, the hydrolysis of boronate ester bonds situated in a COF environment follows reaction pathways that are different and have increased energy barriers. These results point to an enhanced hydrolytic stability of COF-5 crystals.

Quantitative electron probe microanalysis of boron in binary borides

International Nuclear Information System (INIS)

Bastin, G.F.; Heijligers, H.J.M.

1986-01-01

Quantitative electron probe microanalysis has been performed in 27 binary borides in the range of 4-30 keV, both for the metals as well as for Boron. The procedures along which accurate intensity measurements for B-K α must be carried out are discussed in detail. A total of 196 k-ratios with respect to elemental standards for the metal X-ray lines and 180 k-ratios for B-K α relative to elemental Boron have been obtained. These data have been used to arrive at an improved parameterization for the φ(ρz) approach in matrix correction. The resulting new program (BAS861) was compared to 5 other current correction programs. At the same occasion the available set of mass absorption coefficients for Boron was tested on its consistency and better values suggested where necessary. Finally it is shown that the modified version of the Gaussian φ(ρz) approach (BAS861 program) is highly successful in the matrix correction for B-K α : a relative root-mean-square value of 6.30% was obtained. (Auth.)

Electrochemical Properties of Boron-Doped Fullerene Derivatives for Lithium-Ion Battery Applications.

Science.gov (United States)

Sood, Parveen; Kim, Ki Chul; Jang, Seung Soon

2018-03-19

The high electron affinity of fullerene C 60 coupled with the rich chemistry of carbon makes it a promising material for cathode applications in lithium-ion batteries. Since boron has one electron less than carbon, the presence of boron on C 60 cages is expected to generate electron deficiency in C 60 , and thereby to enhance its electron affinity. By using density functional theory (DFT), we studied the redox potentials and electronic properties of C 60 and C 59 B. We have found that doping C 60 with one boron atom results in a substantial increase in redox potential from 2.462 V to 3.709 V, which was attributed to the formation of an open shell system. We also investigated the redox and electronic properties of C 59 B functionalized with various redox-active oxygen containing functional groups (OCFGs). For the combination of functionalization with OCFGs and boron doping, it is found that the enhancement of redox potential is reduced, which is mainly attributed to the open shell structure being changed to a closed-shell one. Nevertheless, the redox potentials are still higher than that of pristine C 60 . From the observation that the lowest unoccupied molecular orbital of closed-shell OCFG- functionalized C 59 B is correlated well with the redox potential, it was confirmed that the spin state is crucial to be considered to understand the relationship between electronic structure and redox properties. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Influence of boron on the morphological and physiological growth parameters of bean

International Nuclear Information System (INIS)

Oliveira, S.A. de

1982-01-01

Effect of boron on Phaseolus vulgaris L. var. Cacahuate was studied in nutrient solutions containing 0.000; 0.005; 0.050 and 0.500 ppm of the element. The deficiency of boron affected root growth, leaf development and plant growth. Lower values of net assimilation rate (NAR) indicated reduced photosynthetic activity in the case of boron deficiency. (M.A.C.) [pt

Coffee leaf and stem anatomy under boron deficiency Anatomia de ramos e folhas de cafeeiro sob feficiência de boro

Directory of Open Access Journals (Sweden)

Ciro Antonio Rosolem

2007-06-01

Full Text Available Boron deficiency in coffee is widely spread in Brazilian plantations, but responses to B fertilizer have been erratic, depending on the year, form and time of application and B source. A better understanding of the effects of B on plant physiology and anatomy is important to establish a rational fertilization program since B translocation within the plant may be affected by plant anatomy. In this experiment, coffee plantlets of two varieties were grown in nutrient solutions with B levels of 0.0 (deficient, 5.0 µM (adequate and 25.0 µM (high. At the first symptoms of deficiency, leaves were evaluated, the cell walls separated and assessed for B and Ca concentrations. Scanning electron micrographs were taken of cuts of young leaves and branch tips. The response of both coffee varieties to B was similar and toxicity symptoms were not observed. Boron concentrations in the cell walls increased with B solution while Ca concentrations were unaffected. The Ca/B ratio decreased with the increase of B in the nutrient solution. In deficiency of B, vascular tissues were disorganized and xylem walls thinner. B-deficient leaves had fewer and deformed stomata.A deficiência de B é muito comum nos cafezais brasileiros, mas as respostas do cafeeiro ao B têm sido erráticas, dependendo do ano, do modo e época de aplicação e, ainda, da fonte de B empregada. Um melhor entendimento dos efeitos do B na fisiologia e anatomia do cafeeiro é importante para o desenvolvimento de um programa racional de adubação boratada, uma vez que a anatomia da planta pode influenciar a translocação do nutriente. Neste experimento, plantas de dois cultivares foram cultivadas em soluções nutritivas com 0,0 (deficiente, 5,0 (adequado e 25,0 µM (alto de B. Quando os primeiros sintomas de deficiência apareceram, as folhas foram cortadas e tiveram suas paredes celulares isoladas e analisadas quanto aos teores de B e Ca. Cortes foram feitos em folhas novas e no ápice de

Functional characterization of Citrus macrophylla BOR1 as a boron transporter.

Science.gov (United States)

Cañon, Paola; Aquea, Felipe; Rodríguez-Hoces de la Guardia, Amparo; Arce-Johnson, Patricio

2013-11-01

Plants have evolved to develop an efficient system of boron uptake and transport using a range of efflux carriers named BOR proteins. In this work we isolated and characterized a boron transporter of citrus (Citrus macrophylla), which was named CmBOR1 for its high homology to AtBOR1. CmBOR1 has 4403 bp and 12 exons. Its coding region has 2145 bp and encodes for a protein of 714 amino acids. CmBOR1 possesses the molecular features of BORs such as an anion exchanger domain and the presence of 10 transmembrane domains. Functional analysis in yeast indicated that CmBOR1 has an efflux boron transporter activity, and transformants have increased tolerance to excess boron. CmBOR1 is expressed in leaves, stem and flowers and shows the greatest accumulation in roots. The transcript accumulation was significantly increased under boron deficiency conditions in shoots. In contrast, the accumulation of the transcript did not change in boron toxicity conditions. Finally, we observed that constitutive expression of CmBOR1 was able to increase tolerance to boron deficiency conditions in Arabidopsis thaliana, suggesting that CmBOR1 is a xylem loading boron transporter. Based on these results, it was determined that CmBOR1 encodes a boric acid/borate transporter involved in tolerance to boron deficiency in plants. © 2013 Scandinavian Plant Physiology Society.

Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

Energy Technology Data Exchange (ETDEWEB)

Behzad, Somayeh, E-mail: somayeh.behzad@gmail.co [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of); Moradian, Rostam [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of); Nano Science and Technology Research Center, Razi University, Kermanshah (Iran, Islamic Republic of); Computational Physical Science Research Laboratory, Department of Nano Science, Institute for Studies in Theoretical Physics and Mathematics (IPM), P.O. Box 19395-5531, Tehran (Iran, Islamic Republic of); Chegel, Raad [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of)

2010-12-01

The effects of boron doping on the structural and electronic properties of (6,0)-(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

International Nuclear Information System (INIS)

Behzad, Somayeh; Moradian, Rostam; Chegel, Raad

2010-01-01

The effects of boron doping on the structural and electronic properties of (6,0)-(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

Science.gov (United States)

Behzad, Somayeh; Moradian, Rostam; Chegel, Raad

2010-12-01

The effects of boron doping on the structural and electronic properties of (6,0)@(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

Electronic structure of superlattices of graphene and hexagonal boron nitride

KAUST Repository

Kaloni, Thaneshwor P.

2011-11-14

We study the electronic structure of superlattices consisting of graphene and hexagonal boron nitride slabs, using ab initio density functional theory. We find that the system favors a short C–B bond length at the interface between the two component materials. A sizeable band gap at the Dirac point is opened for superlattices with single graphene layers but not for superlattices with graphene bilayers. The system is promising for applications in electronic devices such as field effect transistors and metal-oxide semiconductors.

Electronic structure of superlattices of graphene and hexagonal boron nitride

KAUST Repository

Kaloni, Thaneshwor P.; Cheng, Yingchun; Schwingenschlö gl, Udo

2011-01-01

We study the electronic structure of superlattices consisting of graphene and hexagonal boron nitride slabs, using ab initio density functional theory. We find that the system favors a short C–B bond length at the interface between the two component materials. A sizeable band gap at the Dirac point is opened for superlattices with single graphene layers but not for superlattices with graphene bilayers. The system is promising for applications in electronic devices such as field effect transistors and metal-oxide semiconductors.

Long-term boron-deficiency-responsive genes revealed by cDNA-AFLP differ between Citrus sinensis roots and leaves

Science.gov (United States)

Lu, Yi-Bin; Qi, Yi-Ping; Yang, Lin-Tong; Lee, Jinwook; Guo, Peng; Ye, Xin; Jia, Meng-Yang; Li, Mei-Li; Chen, Li-Song

2015-01-01

Seedlings of Citrus sinensis (L.) Osbeck were supplied with boron (B)-deficient (without H3BO3) or -sufficient (10 μM H3BO3) nutrient solution for 15 weeks. We identified 54 (38) and 38 (45) up (down)-regulated cDNA-AFLP bands (transcript-derived fragments, TDFs) from B-deficient leaves and roots, respectively. These TDFs were mainly involved in protein and amino acid metabolism, carbohydrate and energy metabolism, nucleic acid metabolism, cell transport, signal transduction, and stress response and defense. The majority of the differentially expressed TDFs were isolated only from B-deficient roots or leaves, only seven TDFs with the same GenBank ID were isolated from the both. In addition, ATP biosynthesis-related TDFs were induced in B-deficient roots, but unaffected in B-deficient leaves. Most of the differentially expressed TDFs associated with signal transduction and stress defense were down-regulated in roots, but up-regulated in leaves. TDFs related to protein ubiquitination and proteolysis were induced in B-deficient leaves except for one TDF, while only two down-regulated TDFs associated with ubiquitination were detected in B-deficient roots. Thus, many differences existed in long-term B-deficiency-responsive genes between roots and leaves. In conclusion, our findings provided a global picture of the differential responses occurring in B-deficient roots and leaves and revealed new insight into the different adaptive mechanisms of C. sinensis roots and leaves to B-deficiency at the transcriptional level. PMID:26284101

Angle-resolved electron energy loss spectroscopy in hexagonal boron nitride

Science.gov (United States)

Fossard, Frédéric; Sponza, Lorenzo; Schué, Léonard; Attaccalite, Claudio; Ducastelle, François; Barjon, Julien; Loiseau, Annick

2017-09-01

Electron energy loss spectra were measured on hexagonal boron nitride single crystals employing an electron energy loss spectroscopic setup composed of an electron microscope equipped with a monochromator and an in-column filter. This setup provides high-quality energy-loss spectra and allows also for the imaging of energy-filtered diffraction patterns. These two acquisition modes provide complementary pieces of information, offering a global view of excitations in reciprocal space. As an example of the capabilities of the method we show how easily the core loss spectra at the K edges of boron and nitrogen can be measured and imaged. Low losses associated with interband and/or plasmon excitations are also measured. This energy range allows us to illustrate that our method provides results whose quality is comparable to that obtained from nonresonant x-ray inelastic scattering but with advantageous specificities such as an enhanced sensitivity at low q and a much greater simplicity and versatility that make it well adapted to the study of two-dimensional materials and related heterostructures. Finally, by comparing theoretical calculations to our measures, we are able to relate the range of applicability of ab initio calculations to the anisotropy of the sample and assess the level of approximation required for a proper simulation of our acquisition method.

Bismuth-boron multiple bonding in BiB_2O"- and Bi_2B"-

International Nuclear Information System (INIS)

Jian, Tian; Cheung, Ling Fung; Chen, Teng-Teng; Wang, Lai-Sheng

2017-01-01

Despite its electron deficiency, boron is versatile in forming multiple bonds. Transition-metal-boron double bonding is known, but boron-metal triple bonds have been elusive. Two bismuth boron cluster anions, BiB_2O"- and Bi_2B"-, containing triple and double B-Bi bonds are presented. The BiB_2O"- and Bi_2B"- clusters are produced by laser vaporization of a mixed B/Bi target and characterized by photoelectron spectroscopy and ab initio calculations. Well-resolved photoelectron spectra are obtained and interpreted with the help of ab initio calculations, which show that both species are linear. Chemical bonding analyses reveal that Bi forms triple and double bonds with boron in BiB_2O"- ([Bi≡B-B≡O]"-) and Bi_2B"- ([Bi=B=Bi]"-), respectively. The Bi-B double and triple bond strengths are calculated to be 3.21 and 4.70 eV, respectively. This is the first experimental observation of Bi-B double and triple bonds, opening the door to design main-group metal-boron complexes with multiple bonding. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

Evidence for multiple polytypes of semiconducting boron carbide (C2B10) from electronic structure

International Nuclear Information System (INIS)

Lunca-Popa, Petru; Brand, J I; Balaz, Snjezana; Rosa, Luis G; Boag, N M; Bai Mengjun; Robertson, B W; Dowben, P A

2005-01-01

Boron carbides fabricated via plasma enhanced chemical vapour deposition from different isomeric source compounds with the same C 2 B 10 H 12 closo-icosahedral structure result in materials with very different direct (optical) band gaps. This provides compelling evidence for the existence of multiple polytypes of C 2 B 10 boron carbide and is consistent with electron diffraction results

Next generation of the self-consistent and environment-dependent Hamiltonian: Applications to various boron allotropes from zero- to three-dimensional structures

Energy Technology Data Exchange (ETDEWEB)

Tandy, P.; Yu, Ming; Leahy, C.; Jayanthi, C. S.; Wu, S. Y. [Department of Physics and Astronomy, University of Louisville, Louisville, Kentucky 40292 (United States)

2015-03-28

An upgrade of the previous self-consistent and environment-dependent linear combination of atomic orbitals Hamiltonian (referred as SCED-LCAO) has been developed. This improved version of the semi-empirical SCED-LCAO Hamiltonian, in addition to the inclusion of self-consistent determination of charge redistribution, multi-center interactions, and modeling of electron-electron correlation, has taken into account the effect excited on the orbitals due to the atomic aggregation. This important upgrade has been subjected to a stringent test, the construction of the SCED-LCAO Hamiltonian for boron. It was shown that the Hamiltonian for boron has successfully characterized the electron deficiency of boron and captured the complex chemical bonding in various boron allotropes, including the planar and quasi-planar, the convex, the ring, the icosahedral, and the fullerene-like clusters, the two-dimensional monolayer sheets, and the bulk alpha boron, demonstrating its transferability, robustness, reliability, and predictive power. The molecular dynamics simulation scheme based on the Hamiltonian has been applied to explore the existence and the energetics of ∼230 compact boron clusters B{sub N} with N in the range from ∼100 to 768, including the random, the rhombohedral, and the spherical icosahedral structures. It was found that, energetically, clusters containing whole icosahedral B{sub 12} units are more stable for boron clusters of larger size (N > 200). The ease with which the simulations both at 0 K and finite temperatures were completed is a demonstration of the efficiency of the SCED-LCAO Hamiltonian.

Electronic structure of binuclear acetylacetonates of boron difluoride

Science.gov (United States)

Tikhonov, Sergey A.; Svistunova, Irina V.; Samoilov, Ilya S.; Osmushko, Ivan S.; Borisenko, Aleksandr V.; Vovna, Vitaliy I.

2018-05-01

The electronic structure of boron difluoride acetylacetonate and its three derivatives was studied using photoelectron and absorption spectroscopy, as well as the density functional theory. In a series of binuclear acetylacetonate complexes containing bridge-moieties of sulfur and selenium atoms, it was found an appreciable mixing of the π3-orbital of the chelate cycle with atomic orbitals S 3p and Se 4p resulting in destabilization of the HOMO levels by 0.4-0.6 eV, in comparison with the monomer. The positively charged fragment C(CH3)-CX-C(CH3) causes the field effect, which leads to stabilization of the LUMO levels by 0.3-0.4 eV and C 1s-levels by 0.5-1.2 eV. An analysis of the research results on the electronic structure made it possible to determine the effect of substituents in the γ position on the absorption spectra, which is mainly determined by the electron density transfer from the chalcogen atoms to the chelate cycles. It is shown that the calculated energy intervals between electron levels correlate well with the structure of the photoelectron spectra of valence and core electrons.

Electron paramagnetic resonance investigations of carbon-doped β rhombohedral boron

International Nuclear Information System (INIS)

Gercke, U.; Siems, C.-D.

1979-01-01

Electron paramagnetic resonance (EPR) measurements at 9 and 35 GHz on polycrystalline β rhombohedral boron with various carbon contents resulted in partly resolved absorption spectra. At 300 K the spin density ratio of two lines (called D and E) showed a linear increase with the carbon content. This ratio is temperature dependent. The lines D and E are photo-EPR active with different quantum efficiencies at various temperatures. (Auth.)

Boron rates for triticale and wheat crops

Directory of Open Access Journals (Sweden)

Corrêa Juliano Corulli

2005-01-01

Full Text Available No reports are registered on responses to boron fertilization nutrient deficiency and toxicity in triticale crops. The aim of this study was to evaluate triticale response to different rates of boron in comparison to wheat in an hapludox with initial boron level at 0.08 mg dm-3 4 4 factorial design trial completely randomized blocks design (n = 4. Boron rates were 0; 0.62; 1.24 and 1.86 mg dm-3; triticale cultivars were IAC 3, BR 4 and BR 53 and IAPAR 38 wheat crop was used for comparison. The wheat (IAPAR 38 crop presented the highest boron absorption level of all. Among triticale cultivars, the most responsive was IAC 53, presenting similar characteristics to wheat, followed by BR 4; these two crops are considered tolerant to higher boron rates in soil. Regarding to BR 53, no absorption effect was observed, and the cultivars was sensitive to boron toxicity. Absorption responses differed for each genotype. That makes it possible to choose and use the best-adapted plants to soils with different boron rates.

No evidence that boron influences tree species distributions in lowland tropical forests of Panama.

Science.gov (United States)

Turner, Benjamin L; Zalamea, Paul-Camilo; Condit, Richard; Winter, Klaus; Wright, S Joseph; Dalling, James W

2017-04-01

It was recently proposed that boron might be the most important nutrient structuring tree species distributions in tropical forests. Here we combine observational and experimental studies to test this hypothesis for lowland tropical forests of Panama. Plant-available boron is uniformly low in tropical forest soils of Panama and is not significantly associated with any of the > 500 species in a regional network of forest dynamics plots. Experimental manipulation of boron supply to seedlings of three tropical tree species revealed no evidence of boron deficiency or toxicity at concentrations likely to occur in tropical forest soils. Foliar boron did not correlate with soil boron along a local scale gradient of boron availability. Fifteen years of boron addition to a tropical forest increased plant-available boron by 70% but did not significantly change tree productivity or boron concentrations in live leaves, wood or leaf litter. The annual input of boron in rainfall accounts for a considerable proportion of the boron in annual litterfall and is similar to the pool of plant-available boron in the soil, and is therefore sufficient to preclude boron deficiency. We conclude that boron does not influence tree species distributions in Panama and presumably elsewhere in the lowland tropics. No claim to original US government works New Phytologist © 2016 New Phytologist Trust.

Structural, electronic and magnetic properties of carbon doped boron nitride nanowire: Ab initio study

Energy Technology Data Exchange (ETDEWEB)

Jalilian, Jaafar, E-mail: JaafarJalilian@gmail.com [Young Researchers and Elite Club, Kermanshah Br anch, Islamic Azad University, P.O. Box: 6718997551, Kermanshah (Iran, Islamic Republic of); Kanjouri, Faramarz, E-mail: kanjouri@khu.ac.ir [Physics Department, Faculty of Science, Kharazmi University, University Square, P.O. Box: 3197937551, Karaj (Iran, Islamic Republic of)

2016-11-15

Using spin-polarized density functional theory calculations, we demonstrated that carbon doped boron nitride nanowire (C-doped BNNW) has diverse electronic and magnetic properties depending on position of carbon atoms and their percentages. Our results show that only when one carbon atom is situated on the edge of the nanowire, C-doped BNNW is transformed into half-metal. The calculated electronic structure of the C-doped BNNW suggests that doping carbon can induce localized edge states around the Fermi level, and the interaction among localized edge states leads to semiconductor to half-metal transition. Overall, the bond reconstruction causes of appearance of different electronic behavior such as semiconducting, half-metallicity, nonmagnetic metallic, and ferromagnetic metallic characters. The formation energy of the system shows that when a C atom is doped on surface boron site, system is more stable than the other positions of carbon impurity. Our calculations show that C-doped BNNW may offer unique opportunities for developing nanoscale spintronic materials.

Geometric and electronic structures of boron(III)-cored dyes tailored by incorporation of heteroatoms into ligands.

Science.gov (United States)

Sun, Lin; Zhang, Fan; Wang, Xinyang; Qiu, Feng; Xue, Minzhao; Tregnago, Giulia; Cacialli, Franco; Osella, Silvio; Beljonne, David; Feng, Xinliang

2015-03-01

Complexation of a boron atom with a series of bidentate heterocyclic ligands successfully gives rise to corresponding BF2-chelated heteroarenes, which could be considered as novel boron(III)-cored dyes. These dye molecules exhibit planar structures and expanded π-conjugated backbones due to the locked conformation with a boron center. The geometric and electronic structures of these BF2 complexes can be tailored by embedding heteroatoms in the unique modes to form positional isomer and isoelectronic structures. The structure-property relationship is further elucidated by studying the photophysical properties, electrochemical behavior and quantum-chemical calculations. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The impacts of phosphorus deficiency on the photosynthetic electron transport chain

DEFF Research Database (Denmark)

Carstensen, Andreas; Herdean, Andrei; Schmidt, Sidsel Birkelund

2018-01-01

light conditions. Under P deficiency, the enhanced electron flow through PSI increases the levels of NADPH, whereas ATP production remains restricted and hence reduces CO2 fixation. In parallel, lumen acidification activates the qE component of the non-photochemical quenching (NPQ) mechanism......Phosphorus (P) is an essential macronutrient, and P deficiency limits plant productivity. Recent work showed that P deficiency affects electron transport to photosystem I (PSI), but the underlying mechanisms are unknown. Here, we present a comprehensive biological model describing how P deficiency...... accumulate in the thylakoids and cause lumen acidification, which inhibits linear electron flow. Limited plastoquinol (PQH2) oxidation retards electron transport to the cytochrome (Cyt) b6f complex, yet the electron transfer rate of PSI is increased under steady-state growth light and is limited under high...

Experimental evidence for interactions between anions and electron-deficient aromatic rings.

Science.gov (United States)

Berryman, Orion B; Johnson, Darren W

2009-06-14

This feature article summarizes our research aimed at using electron-deficient aromatic rings to bind anions in the context of complementary research in this active field. Particular attention is paid to the different types of interactions exhibited between anions and electron-deficient arenes in solution. The 120+ references cited in this article underscore the flurry of recent activity by numerous researchers in this field, which was relatively nascent when our efforts began in 2005. While the interaction of anions with electron-deficient aromatic rings has recently garnered much attention by supramolecular chemists, the observation of these interactions is not a recent discovery. Therefore, we begin with a historical perspective on early examples of anions interacting with electron-deficient arenes. An introduction to recent (and not so recent) computational investigations concerning anions and electron-deficient aromatic rings as well as a brief structural survey of crystalline examples of this interaction are provided. Finally, the limited solution-based observations of anions interacting with electron-deficient aromatic rings are summarized to introduce our current investigations in this area. We highlight three different systems from our lab where anion-arene interactions have been investigated. First, we show that tandem hydrogen bonds and anion-arene interactions augment halide binding in solution. Second, a crystallographic and computational study highlights the multiple types of interactions possible between anions and electron-deficient arenes. Third, we summarize the first example of a class of designed receptors that emphasize the different types of anion-arene interactions possible in solution.

Electronic structure and photoelectron spectra of boron beta-diketonates

International Nuclear Information System (INIS)

Borisenko, A.V.; Vovna, V.I.

1990-01-01

Photoelectron spectra and data of semiempirical (MNDO, CNDO/2, CNDO/S, INDO) and nonempirical (with STO-3G basis) methods of calculation were obtained to analyse the electronic structure of boron-containing diketonate cycle and the influence of substitution effect (aromatic substituents in particular) on it. The sequence and the character of upper occupied MO were determined; the nature of bond of the fragment X 2 B + and AA was established; charges of six-membered ion and influence of substituents on their values were determined. 13 refs.; 5 figs.; 4 tabs

Electron beam generation and structure of defects in carbon and boron nitride nano-tubes

Energy Technology Data Exchange (ETDEWEB)

Zobelli, A

2007-10-15

The nature and role of defects is of primary importance to understand the physical properties of C and BN (boron nitride) single walled nano-tubes (SWNTs). Transmission electron microscopy (TEM) is a well known powerful tool to study the structure of defects in materials. However, in the case of SWNTs, the electron irradiation of the TEM may knock out atoms. This effect may alter the native structure of the tube, and has also been proposed as a potential tool for nano-engineering of nano-tubular structures. Here we develop a theoretical description of the irradiation mechanism. First, the anisotropy of the emission energy threshold is obtained via density functional based calculations. Then, we numerically derive the total Mott cross section for different emission sites of carbon and boron nitride nano-tubes with different chiralities. Using a dedicated STEM (Scanning Transmission Electron Microscope) microscope with experimental conditions optimised on the basis of derived cross-sections, we are able to control the generation of defects in nano-tubular systems. Either point or line defects can be obtained with a spatial resolution of a few nanometers. The structure, energetics and electronics of point and line defects in BN systems have been investigated. Stability of mono- and di- vacancy defects in hexagonal boron nitride layers is investigated, and their activation energies and reaction paths for diffusion have been derived using the nudged elastic band method (NEB) combined with density functional based techniques. We demonstrate that the appearance of extended linear defects under electron irradiation is more favorable than a random distribution of point defects and this is due to the existence of preferential sites for atom emission in the presence of pre-existing defects, rather than thermal vacancy nucleation and migration. (author)

Electron beam generation and structure of defects in carbon and boron nitride nano-tubes

International Nuclear Information System (INIS)

Zobelli, A.

2007-10-01

The nature and role of defects is of primary importance to understand the physical properties of C and BN (boron nitride) single walled nano-tubes (SWNTs). Transmission electron microscopy (TEM) is a well known powerful tool to study the structure of defects in materials. However, in the case of SWNTs, the electron irradiation of the TEM may knock out atoms. This effect may alter the native structure of the tube, and has also been proposed as a potential tool for nano-engineering of nano-tubular structures. Here we develop a theoretical description of the irradiation mechanism. First, the anisotropy of the emission energy threshold is obtained via density functional based calculations. Then, we numerically derive the total Mott cross section for different emission sites of carbon and boron nitride nano-tubes with different chiralities. Using a dedicated STEM (Scanning Transmission Electron Microscope) microscope with experimental conditions optimised on the basis of derived cross-sections, we are able to control the generation of defects in nano-tubular systems. Either point or line defects can be obtained with a spatial resolution of a few nanometers. The structure, energetics and electronics of point and line defects in BN systems have been investigated. Stability of mono- and di- vacancy defects in hexagonal boron nitride layers is investigated, and their activation energies and reaction paths for diffusion have been derived using the nudged elastic band method (NEB) combined with density functional based techniques. We demonstrate that the appearance of extended linear defects under electron irradiation is more favorable than a random distribution of point defects and this is due to the existence of preferential sites for atom emission in the presence of pre-existing defects, rather than thermal vacancy nucleation and migration. (author)

The Impacts of Phosphorus Deficiency on the Photosynthetic Electron Transport Chain.

Science.gov (United States)

Carstensen, Andreas; Herdean, Andrei; Schmidt, Sidsel Birkelund; Sharma, Anurag; Spetea, Cornelia; Pribil, Mathias; Husted, Søren

2018-05-01

Phosphorus (P) is an essential macronutrient, and P deficiency limits plant productivity. Recent work showed that P deficiency affects electron transport to photosystem I (PSI), but the underlying mechanisms are unknown. Here, we present a comprehensive biological model describing how P deficiency disrupts the photosynthetic machinery and the electron transport chain through a series of sequential events in barley ( Hordeum vulgare ). P deficiency reduces the orthophosphate concentration in the chloroplast stroma to levels that inhibit ATP synthase activity. Consequently, protons accumulate in the thylakoids and cause lumen acidification, which inhibits linear electron flow. Limited plastoquinol oxidation retards electron transport to the cytochrome b 6 f complex, yet the electron transfer rate of PSI is increased under steady-state growth light and is limited under high-light conditions. Under P deficiency, the enhanced electron flow through PSI increases the levels of NADPH, whereas ATP production remains restricted and, hence, reduces CO 2 fixation. In parallel, lumen acidification activates the energy-dependent quenching component of the nonphotochemical quenching mechanism and prevents the overexcitation of photosystem II and damage to the leaf tissue. Consequently, plants can be severely affected by P deficiency for weeks without displaying any visual leaf symptoms. All of the processes in the photosynthetic machinery influenced by P deficiency appear to be fully reversible and can be restored in less than 60 min after resupply of orthophosphate to the leaf tissue. © 2018 American Society of Plant Biologists. All Rights Reserved.

Immunocytochemistry by electron spectroscopic imaging using well defined boronated monovalent antibody fragments.

Science.gov (United States)

Kessels, M M; Qualmann, B; Sierralta, W D

1996-01-01

Contributing to the rapidly developing field of immunoelectron microscopy a new kind of markers has been created. The element boron, incorporated as very stable carborane clusters into different kinds of peptides, served as a marker detectable by electron spectroscopic imaging (ESI)--an electron microscopic technique with high-resolution potential. Covalently linked immunoreagents conspicuous by the small size of both antigen recognizing part and marker moiety are accessible by using peptide concepts for label construction and their conjugation with Fab' fragments. Due to a specific labeling of the free thiol groups of the Fab' fragments, the antigen binding capacity was not affected by the attachment of the markers and the resulting immunoprobes exhibited an elongated shape with the antigen combining site and the label located at opposite ends. The labeling densities observed with these reagents were found to be significantly higher than those obtained by using conventional colloidal gold methods. Combined with digital image processing and analysis systems, boron-based ESI proved to be a powerful approach in ultrastructural immunocytochemistry employing pre- and post-embedding methods.

The interaction of boron with goethite: Experiments and CD-MUSIC modeling

NARCIS (Netherlands)

Goli, E.; Rahnemaie, R.; Hiemstra, T.; Malakouti, M.J.

2011-01-01

Boron (B) is an essential element for plants and animals growth that interacts with mineral surfaces regulating its bioavailability and mobility in soils, sediments, and natural ecosystems. The interaction with mineral surfaces is quite important because of a narrow range between boron deficiency

Synthesis of Boron Nano wires, Nano tubes, and Nano sheets

International Nuclear Information System (INIS)

Patel, R.B.; Chou, T.; Iqbal, Z.

2014-01-01

The synthesis of boron nano wires, nano tubes, and nano sheets using a thermal vapor deposition process is reported. This work confirms previous research and provides a new method capable of synthesizing boron nano materials. The materials were made by using various combinations of MgB 2 , Mg(BH 4 ) 2 , MCM-41, NiB, and Fe wire. Unlike previously reported methods, a nanoparticle catalyst and a silicate substrate are not required for synthesis. Two types of boron nano wires, boron nano tubes, and boron nano sheets were made. Their morphology and chemical composition were determined through the use of scanning electron microscopy, transmission electron microscopy, and electron energy loss spectroscopy. These boron-based materials have potential for electronic and hydrogen storage applications.

Nanographenes as electron-deficient cores of donor-acceptor systems.

Science.gov (United States)

Liu, Yu-Min; Hou, Hao; Zhou, Yan-Zhen; Zhao, Xin-Jing; Tang, Chun; Tan, Yuan-Zhi; Müllen, Klaus

2018-05-15

Conjugation of nanographenes (NGs) with electro-active molecules can establish donor-acceptor π-systems in which the former generally serve as the electron-donating moieties due to their electronic-rich nature. In contrast, here we report a series of reversed donor-acceptor structures are obtained by C-N coupling of electron-deficient perchlorinated NGs with electron-rich anilines. Selective amination at the vertexes of the NGs is unambiguously shown through X-ray crystallography. By varying the donating ability of the anilino groups, the optical and assembly properties of donor-acceptor NGs can be finely modulated. The electron-deficient concave core of the resulting conjugates can host electron-rich guest molecules by intermolecular donor-acceptor interactions and gives rise to charge-transfer supramolecular architectures.

Boron-Doped Carbon Nano-/Microballs from Orthoboric Acid-Starch: Preparation, Characterization, and Lithium Ion Storage Properties

Directory of Open Access Journals (Sweden)

Xinhua Lu

2018-01-01

Full Text Available A boron-doped carbon nano-/microballs (BC was successfully obtained via a two-step procedure including hydrothermal reaction (180°C and carbonization (800°C with cheap starch and H3BO3 as the carbon and boron source. As a new kind of boron-doped carbon, BC contained 2.03 at% B-content and presented the morphology as almost perfect nano-/microballs with different sizes ranging from 500 nm to 5 μm. Besides that, due to the electron deficient boron, BC was explored as anode material and presented good lithium storage performance. At a current density of 0.2 C, the first reversible specific discharge capacity of BC electrode reached as high as 964.2 mAh g–1 and kept at 699 mAh g–1 till the 11th cycle. BC also exhibited good cycle ability with a specific capacity of 356 mAh g–1 after 79 cycles at a current density of 0.5 C. This work proved to be an effective approach for boron-doped carbon nanostructures which has potential usage for lithium storage material.

Proteomic analysis of Arabidopsis thaliana leaves in response to acute boron deficiency and toxicity reveals effects on photosynthesis, carbohydrate metabolism, and protein synthesis.

Science.gov (United States)

Chen, Mei; Mishra, Sasmita; Heckathorn, Scott A; Frantz, Jonathan M; Krause, Charles

2014-02-15

Boron (B) stress (deficiency and toxicity) is common in plants, but as the functions of this essential micronutrient are incompletely understood, so too are the effects of B stress. To investigate mechanisms underlying B stress, we examined protein profiles in leaves of Arabidopsis thaliana plants grown under normal B (30 μM), compared to plants transferred for 60 and 84 h (i.e., before and after initial visible symptoms) in deficient (0 μM) or toxic (3 mM) levels of B. B-responsive polypeptides were sequenced by mass spectrometry, following 2D gel electrophoresis, and 1D gels and immunoblotting were used to confirm the B-responsiveness of some of these proteins. Fourteen B-responsive proteins were identified, including: 9 chloroplast proteins, 6 proteins of photosynthetic/carbohydrate metabolism (rubisco activase, OEC23, photosystem I reaction center subunit II-1, ATPase δ-subunit, glycolate oxidase, fructose bisphosphate aldolase), 6 stress proteins, and 3 proteins involved in protein synthesis (note that the 14 proteins may fall into multiple categories). Most (8) of the B-responsive proteins decreased under both B deficiency and toxicity; only 3 increased with B stress. Boron stress decreased, or had no effect on, 3 of 4 oxidative stress proteins examined, and did not affect total protein. Hence, our results indicate relatively early specific effects of B stress on chloroplasts and protein synthesis. Copyright © 2013 Elsevier GmbH. All rights reserved.

Preparation and electrical properties of boron and boron phosphide films obtained by gas source molecular beam deposition

Energy Technology Data Exchange (ETDEWEB)

Kumashiro, Y.; Yokoyama, T.; Sakamoto, T.; Fujita, T. [Yokohama National Univ. (Japan)

1997-10-01

Boron and boron phosphide films were prepared by gas source molecular beam deposition on sapphire crystal at various substrate temperatures up to 800{degrees}C using cracked B{sub 2}H{sub 6} (2% in H{sub 2}) at 300{degrees}C and cracked PH{sub 3} (20% in H{sub 2}) at 900{degrees}C. The substrate temperatures and gas flow rates of the reactant gases determined the film growth. The boron films with amorphous structure are p type. Increasing growth times lead to increasing mobilities and decreasing carrier concentrations. Boron phosphide film with maximum P/B ratio is obtained at a substrate temperature of 600{degrees}C, below and above which they become phosphorous deficient due to insufficient supply of phosphorus and thermal desorption of the phosphorus as P{sub 2}, respectively, but they are all n type conductors due to phosphorus vacancies.

Development of effective methods for determination of boron in soils and soil solutions

Directory of Open Access Journals (Sweden)

Мaruan Tanasheva

2012-12-01

Full Text Available This paper is related to serious ecological problem in agriculture: soil degradation in rice fields in South Kazakhstan and in particular, to boron toxicity in rice, which resulted in reduced crop yields. The following abiotic factors were studied to determine the ability of boron to accumulate in rice fields: soil type, soil properties like salinity and acidity', season (level of precipitation, water logging /water shortage. The results shows that the severity of boron excess for fertility of rice crop which depends on boron ionic composition in soil. Adverse impact of both boron deficiency and boron excess are discussed. The necessity of boron fertilizers is shown for soils with high boron mobility.

Quantification of the boron speciation in alkali borosilicate glasses by electron energy loss spectroscopy

DEFF Research Database (Denmark)

Cheng, D.S.; Yang, G.; Zhao, Y.Q.

2015-01-01

developed a method based on electron energy loss spectroscopy (EELS) data acquisition and analyses, which enables determination of the boron speciation in a series of ternary alkali borosilicate glasses with constant molar ratios. A script for the fast acquisition of EELS has been designed, from which...

Boron distribution and the effect of lime on boron uptake by pansy, petunia, and gerbera plants

Science.gov (United States)

Reports of boron (B) deficiency have become more prevalent in pansy (Viola ×wittrockiana), petunia (Petunia ×hybrida), and gerbera (Gerbera jamesonii) plug production. When symptoms are observed in production the presence and severity of symptoms have no pattern, symptomatic plants can be located a...

An analytical electron microscopy characterization of melt-spun iron/rare-earth/boron magnetic materials

International Nuclear Information System (INIS)

Dickenson, R.C.; Lawless, K.R.; Hadjipanayis, G.C.

1986-01-01

Iron/rare-earth/boron permanent magnet materials have recently been developed to reduce the need for the strategic element cobalt, which was previously the primary component of high-energy magnets. These materials are generally produced by annealing rapidly solidified ribbons or by conventional powder metallurgy techniques. This paper reports results from an analytical electron microscopy characterization undertaken to establish the relationship between the magnetic properties and the microstructure of two iron/rare-earth/boron (Fe/RE/B) alloys. Ribbons of Fe 75 Pr 15 B 10 and Fe 77 Tb 15 B 8 were produced by melt-spinning. To obtain optimum magnetic properties, both alloys were then annealed at 700 0 C, the FePrB ribbons for 6 minutes and the FeTbB ribbons for 90 minutes. Foils for transmission electron microscopy were prepared by ion-milling the ribbons on a cold stage and examined using a Philips 400T TEM/STEM equipped with an energy dispersive x-ray unit

Boron levels in soils cropped to coffee and their relationships to ...

African Journals Online (AJOL)

Studies on boron levels in soils cropped to coffee were carried out in Ghana due to widespread reports on boron deficiency in soils of some coffee producing countries. Leaves and soils were sampled from Cocobod coffee plantations at Bogoso, Suhuma, Manso-Mim, Bunso and Bepong, which represent the main coffee ...

Bismuth-boron multiple bonding in BiB{sub 2}O{sup -} and Bi{sub 2}B{sup -}

Energy Technology Data Exchange (ETDEWEB)

Jian, Tian; Cheung, Ling Fung; Chen, Teng-Teng; Wang, Lai-Sheng [Department of Chemistry, Brown University, Providence, RI (United States)

2017-08-01

Despite its electron deficiency, boron is versatile in forming multiple bonds. Transition-metal-boron double bonding is known, but boron-metal triple bonds have been elusive. Two bismuth boron cluster anions, BiB{sub 2}O{sup -} and Bi{sub 2}B{sup -}, containing triple and double B-Bi bonds are presented. The BiB{sub 2}O{sup -} and Bi{sub 2}B{sup -} clusters are produced by laser vaporization of a mixed B/Bi target and characterized by photoelectron spectroscopy and ab initio calculations. Well-resolved photoelectron spectra are obtained and interpreted with the help of ab initio calculations, which show that both species are linear. Chemical bonding analyses reveal that Bi forms triple and double bonds with boron in BiB{sub 2}O{sup -} ([Bi≡B-B≡O]{sup -}) and Bi{sub 2}B{sup -} ([Bi=B=Bi]{sup -}), respectively. The Bi-B double and triple bond strengths are calculated to be 3.21 and 4.70 eV, respectively. This is the first experimental observation of Bi-B double and triple bonds, opening the door to design main-group metal-boron complexes with multiple bonding. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

Intrinsic ferromagnetism in hexagonal boron nitride nanosheets

Energy Technology Data Exchange (ETDEWEB)

Si, M. S.; Gao, Daqiang, E-mail: gaodq@lzu.edu.cn, E-mail: xueds@lzu.edu.cn; Yang, Dezheng; Peng, Yong; Zhang, Z. Y.; Xue, Desheng, E-mail: gaodq@lzu.edu.cn, E-mail: xueds@lzu.edu.cn [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Liu, Yushen [Jiangsu Laboratory of Advanced Functional Materials and College of Physics and Engineering, Changshu Institute of Technology, Changshu 215500 (China); Deng, Xiaohui [Department of Physics and Electronic Information Science, Hengyang Normal University, Hengyang 421008 (China); Zhang, G. P. [Department of Physics, Indiana State University, Terre Haute, Indiana 47809 (United States)

2014-05-28

Understanding the mechanism of ferromagnetism in hexagonal boron nitride nanosheets, which possess only s and p electrons in comparison with normal ferromagnets based on localized d or f electrons, is a current challenge. In this work, we report an experimental finding that the ferromagnetic coupling is an intrinsic property of hexagonal boron nitride nanosheets, which has never been reported before. Moreover, we further confirm it from ab initio calculations. We show that the measured ferromagnetism should be attributed to the localized π states at edges, where the electron-electron interaction plays the role in this ferromagnetic ordering. More importantly, we demonstrate such edge-induced ferromagnetism causes a high Curie temperature well above room temperature. Our systematical work, including experimental measurements and theoretical confirmation, proves that such unusual room temperature ferromagnetism in hexagonal boron nitride nanosheets is edge-dependent, similar to widely reported graphene-based materials. It is believed that this work will open new perspectives for hexagonal boron nitride spintronic devices.

Photoelectron spectra and electronic structure of nitrogen analogues of boron β-diketonates with aromatic substituents

Energy Technology Data Exchange (ETDEWEB)

Tikhonov, Sergey A., E-mail: allser@bk.ru [Far Eastern Federal University, 8 Sukhanova St., Vladivostok, 690950 (Russian Federation); Vovna, Vitaliy I. [Far Eastern Federal University, 8 Sukhanova St., Vladivostok, 690950 (Russian Federation); Borisenko, Aleksandr V. [Vladivostok Branch of Russian Customs Academy, 16v Strelkovaya St., Vladivostok, 690034 (Russian Federation)

2016-11-15

Highlights: • The electronic structures of three nitrogen analogues of boron β-diketonates have been investigated. • UV photoelectron spectra have been interpreted. • The structure of the UV photoelectron spectra is in good agreement with the energies and compositions of Kohn-Sham orbitals. - Abstract: The electronic structure of three nitrogen analogoues of boron β-diketonates containing aromatic substituents was studied by the ultraviolet photoelectron spectroscopy and within the density functional theory. In order to determine effects of heteroatom substitution in the chelate ligand, a comparative analysis was carried out for the electronic structure of three model compounds. In a range of model compounds, the HOMO's nature was revealed to be the same. The HOMO-1 orbital of nitrogen containing compounds is determined by the presence of lone electron pairs of nitrogen. In a range of the complexes under study, the influence of aromatic substituents on the electronic structure was defined. In the imidoylamidinate complex, in contrast to formazanates and β-diketonates, it was found the absence of any noticeable mixing of π-orbitals of the chelate and benzene rings. It was shown that within energy range to 11 eV, the calculated results reproduce well the energy differences between the ionized states of complexes.

Late-onset form of beta-electron transfer flavoprotein deficiency

DEFF Research Database (Denmark)

Curcoy, A; Olsen, Rikke Katrine Jentoft; Ribes, A

2003-01-01

Multiple acyl-CoA-dehydrogenase deficiency (MADD) or glutaric aciduria type II (GAII) are a group of metabolic disorders due to deficiency of either electron transfer flavoprotein (ETF) or electron transfer flavoprotein ubiquinone oxidoreductase (ETF-QO). We report the clinical features...... and biochemical and molecular genetic analyses of a patient with a mild late-onset form of GAII due to beta-ETF deficiency. Biochemical data showed an abnormal urine organic acid profile, low levels of free carnitine, increased levels of C(10:1n-6), and C(14:1n-9) in plasma, and decreased oxidation of [9,10-3H......]palmitate and [9,10-3H]myristate in fibroblasts, suggesting MAD deficiency. In agreement with these findings, mutational analysis of the ETF/ETFDH genes demonstrated an ETFB missense mutation 124T>C in exon 2 leading to replacement of cysteine-42 with arginine (C42R), and a 604_606AAG deletion in exon 6...

Synthesis and characterization of ammonium phosphate fertilizers with boron

Directory of Open Access Journals (Sweden)

ANGELA MAGDA

2010-07-01

Full Text Available The concentration of boron, an essential micronutrient for plants, presents a narrow range between deficiency and toxicity. In order to provide the boron requirement for plants, and to avoid toxicity problems, boron compounds are mixed with basic fertilizers. Sodium borate pentahydrate was used as a boron source. Ammonium orthophosphates fertilizers with boron were prepared by neutralizing phosphoric acid with ammonia and addition of variable amounts of sodium tetraborate pentahydrate to the reaction mixture at a NH3:H3PO4 molar ratio of 1.5. The fertilizers obtained with boron contents ranging from 0.05 to 1 % (w/w were fully characterized by chemical analysis, thermal analysis, X-ray diffraction and infrared spectrophotometry. The studies showed that up to 500 °C, regardless of the boron content, no significant changes concerning thermal stability and nutritional properties occurred. Above 500 °C, an increase of thermal stability with an increase of the boron content was observed. X-Ray diffraction of a heat-treated sample containing 5 % (w/w boron indicated the appearance of boron orthophosphate, BPO4, as a new crystalline phase, and the disappearance of the previous structures above 500 °C, which explains the increase in thermal stability.

NEW ADVANCES IN BORON SOIL CHEMISTRY

Science.gov (United States)

Boron is an essential plant micronutrient for which the range between deficiency and toxicity is narrower than for any other nutrient element. Plants respond directly to the amount of B in soil solution and only indirectly to the amount of B adsorbed on soil particle surfaces. ...

Electron spectroscopic imaging of antigens by reaction with boronated antibodies.

Science.gov (United States)

Qualmann, B; Kessels, M M; Klobasa, F; Jungblut, P W; Sierralta, W D

1996-07-01

Two small homogeneous markers for electron spectroscopic imaging (ESI) containing eight dodecaborane cages linked to a poly-alpha, epsilon-L-lysine dendrimer were synthesized; one of these was made water soluble by the attachment of a polyether. The markers were coupled to the sulfhydryl group of (monovalent) antibody fragments (Fab') by a homobifunctional cross-linker. While the coupling ratios of the poorly water-soluble compound did not exceed 20%, the polyether-containing variant reacted quantitatively. Its suitability for immunolabelling was tested in a study of the mechanism of the transcellular transport of an administered heterologous protein (bovine serum albumin, BSA) through ileal enterocytes of newborn piglets by endocytotic vesicles in comparison to conventional immunogold reagents. The post-embedding technique was employed. The boronated Fab' gave rise to considerably higher tagging frequencies than seen with immunogold, as could be expected from its form- and size-related physical advantages and the dense packing of BSA in the vesicles. The new probe, carrying the antigen-combining cleft at one end and the boron clusters at the opposite end of the oval-shaped conjugate, add to the potential of ESI-based immunocytochemistry.

Evaluation of freestanding boron-doped diamond grown by chemical vapour deposition as substrates for vertical power electronic devices

Energy Technology Data Exchange (ETDEWEB)

Issaoui, R.; Achard, J.; Tallaire, A.; Silva, F.; Gicquel, A. [LSPM-CNRS (formerly LIMHP), Universite Paris 13, 99, Avenue Jean-Baptiste Clement, 93430 Villetaneuse (France); Bisaro, R.; Servet, B.; Garry, G. [Thales Research and Technology France, Campus de Polytechnique, 1 Avenue Augustin Fresnel, F-91767 Palaiseau Cedex (France); Barjon, J. [GEMaC-CNRS, Universite de Versailles Saint Quentin Batiment Fermat, 45 Avenue des Etats-Unis, 78035 Versailles Cedex (France)

2012-03-19

In this study, 4 x 4 mm{sup 2} freestanding boron-doped diamond single crystals with thickness up to 260 {mu}m have been fabricated by plasma assisted chemical vapour deposition. The boron concentrations measured by secondary ion mass spectroscopy were 10{sup 18} to 10{sup 20} cm{sup -3} which is in a good agreement with the values calculated from Fourier transform infrared spectroscopy analysis, thus indicating that almost all incorporated boron is electrically active. The dependence of lattice parameters and crystal mosaicity on boron concentrations have also been extracted from high resolution x-ray diffraction experiments on (004) planes. The widths of x-ray rocking curves have globally shown the high quality of the material despite a substantial broadening of the peak, indicating a decrease of structural quality with increasing boron doping levels. Finally, the suitability of these crystals for the development of vertical power electronic devices has been confirmed by four-point probe measurements from which electrical resistivities as low as 0.26 {Omega} cm have been obtained.

The Impacts of Phosphorus Deficiency on the Photosynthetic Electron Transport Chain1[OPEN

Science.gov (United States)

2018-01-01

Phosphorus (P) is an essential macronutrient, and P deficiency limits plant productivity. Recent work showed that P deficiency affects electron transport to photosystem I (PSI), but the underlying mechanisms are unknown. Here, we present a comprehensive biological model describing how P deficiency disrupts the photosynthetic machinery and the electron transport chain through a series of sequential events in barley (Hordeum vulgare). P deficiency reduces the orthophosphate concentration in the chloroplast stroma to levels that inhibit ATP synthase activity. Consequently, protons accumulate in the thylakoids and cause lumen acidification, which inhibits linear electron flow. Limited plastoquinol oxidation retards electron transport to the cytochrome b6f complex, yet the electron transfer rate of PSI is increased under steady-state growth light and is limited under high-light conditions. Under P deficiency, the enhanced electron flow through PSI increases the levels of NADPH, whereas ATP production remains restricted and, hence, reduces CO2 fixation. In parallel, lumen acidification activates the energy-dependent quenching component of the nonphotochemical quenching mechanism and prevents the overexcitation of photosystem II and damage to the leaf tissue. Consequently, plants can be severely affected by P deficiency for weeks without displaying any visual leaf symptoms. All of the processes in the photosynthetic machinery influenced by P deficiency appear to be fully reversible and can be restored in less than 60 min after resupply of orthophosphate to the leaf tissue. PMID:29540590

Electron field emission from boron doped microcrystalline diamond

International Nuclear Information System (INIS)

Roos, M.; Baranauskas, V.; Fontana, M.; Ceragioli, H.J.; Peterlevitz, A.C.; Mallik, K.; Degasperi, F.T.

2007-01-01

Field emission properties of hot filament chemical vapor deposited boron doped polycrystalline diamond have been studied. Doping level (N B ) of different samples has been varied by the B/C concentration in the gas feed during the growth process and doping saturation has been observed for high B/C ratios. Threshold field (E th ) for electron emission as function of B/C concentration has been measured, and the influences of grain boundaries, doping level and surface morphology on field emission properties have been investigated. Carrier transport through conductive grains and local emission properties of surface sites have been figured out to be two independent limiting effects in respect of field emission. Emitter current densities of 500 nA cm -2 were obtained using electric fields less than 8 V/μm

Tracking of boron-labelled monoclonal antibodies by energy loss spectroscopy in the electron microscope: a preliminary report

International Nuclear Information System (INIS)

Moore, D.E.; Dawes, A.L.; Chandler, A.K.; Bradstock, K.F.

1990-01-01

A technique is being developed, based on electron energy loss spectroscopy in the transmission electron microscope, whereby the binding of monoclonal antibodies to their specific receptors and any subsequent movement or endocytosis can be studied in cell culture. The method requires that antibodies be labelled with a low atomic number element, such as boron. Two procedures have been established enabling up to 1200 boron atoms to be attached per antibody molecule without affecting the immunoreactivity. In the first method, dodecaborane cages are attached to polyornithine bridging molecules which in turn are covalently bound to the antibody using a photosensitive reagent. The second technique makes use of the extremely high biotin-avidin affinity by attaching biotin to the antibody and dodecaborane cages to avidin before mixing the two components. 13 refs., 2 figs

Interaction of boron with graphite: A van der Waals density functional study

International Nuclear Information System (INIS)

Liu, Juan; Wang, Chen; Liang, Tongxiang; Lai, Wensheng

2016-01-01

Highlights: • A van der Waals density-functional approach is applied to study the interaction of boron with graphite. • VdW-DF functionals give fair agreement of crystal parameters with experiments. • The π electron approaches boron while adsorbing on graphite surface. • The hole introduced by boron mainly concentrates on boron and the nearest three carbon atoms. • PBE cannot describe the interstitial boron in graphite because of the ignoring binding of graphite sheets. - Abstract: Boron doping has been widely investigated to improve oxidation resistance of graphite. In this work the interaction of boron with graphite is investigated by a van der Waals density-functional approach (vdW-DF). The traditional density-functional theory (DFT) is well accounted for the binding in boron-substituted graphite. However, to investigate the boron atom on graphite surface and the interstitial impurities require use of a description of graphite interlayer binding. Traditional DFT cannot describe the vdW physics, for instance, GGA calculations show no relevant binding between graphite sheets. LDA shows some binding, but they fail to provide an accurate account of vdW forces. In this paper, we compare the calculation results of graphite lattice constant and cohesive energy by several functionals, it shows that vdW-DF such as two optimized functionals optB88-vdW and optB86b-vdW give much improved results than traditional DFT. The vdW-DF approach is then applied to study the interaction of boron with graphite. Boron adsorption, substitution, and intercalation are discussed in terms of structural parameters and electronic structures. When adsorbing on graphite surface, boron behaves as π electron acceptor. The π electron approaches boron atom because of more electropositive of boron than carbon. For substitution situation, the hole introduced by boron mainly concentrates on boron and the nearest three carbon atoms. The B-doped graphite system with the hole has less

Interaction of boron with graphite: A van der Waals density functional study

Energy Technology Data Exchange (ETDEWEB)

Liu, Juan; Wang, Chen [Beijing Key Lab of Fine Ceramics, Institute of Nuclear and New Energy Technology, Tsinghua University, Beijing 100084 (China); Liang, Tongxiang, E-mail: txliang@tsinghua.edu.cn [State Key Lab of New Ceramic and Fine Processing, Tsinghua University, Beijing 100084 (China); Lai, Wensheng [Advanced Material Laboratory, School of Materials Science & Engineering, Tsinghua University, Beijing, 100084 (China)

2016-08-30

Highlights: • A van der Waals density-functional approach is applied to study the interaction of boron with graphite. • VdW-DF functionals give fair agreement of crystal parameters with experiments. • The π electron approaches boron while adsorbing on graphite surface. • The hole introduced by boron mainly concentrates on boron and the nearest three carbon atoms. • PBE cannot describe the interstitial boron in graphite because of the ignoring binding of graphite sheets. - Abstract: Boron doping has been widely investigated to improve oxidation resistance of graphite. In this work the interaction of boron with graphite is investigated by a van der Waals density-functional approach (vdW-DF). The traditional density-functional theory (DFT) is well accounted for the binding in boron-substituted graphite. However, to investigate the boron atom on graphite surface and the interstitial impurities require use of a description of graphite interlayer binding. Traditional DFT cannot describe the vdW physics, for instance, GGA calculations show no relevant binding between graphite sheets. LDA shows some binding, but they fail to provide an accurate account of vdW forces. In this paper, we compare the calculation results of graphite lattice constant and cohesive energy by several functionals, it shows that vdW-DF such as two optimized functionals optB88-vdW and optB86b-vdW give much improved results than traditional DFT. The vdW-DF approach is then applied to study the interaction of boron with graphite. Boron adsorption, substitution, and intercalation are discussed in terms of structural parameters and electronic structures. When adsorbing on graphite surface, boron behaves as π electron acceptor. The π electron approaches boron atom because of more electropositive of boron than carbon. For substitution situation, the hole introduced by boron mainly concentrates on boron and the nearest three carbon atoms. The B-doped graphite system with the hole has less

β-Rhombohedral Boron: At the Crossroads of the Chemistry of Boron and the Physics of Frustration [Boron: a frustrated element

Energy Technology Data Exchange (ETDEWEB)

Ogitsu, Tadashi [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Schwegler, Eric [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Galli, Giulia [Univ. of California, Davis, CA (United States)

2013-05-08

In the periodic table boron occupies a peculiar, crossover position: on the first row, it is surrounded by metal forming elements on the left and by non-metals on the right. In addition, it is the only non-metal of the third column. Therefore it is perhaps not surprising that the crystallographic structure and topology of its stable allotrope at room temperature (β-boron) are not shared by any other element, and are extremely complex. The formidable intricacy of β- boron, with interconnecting icosahedra, partially occupied sites, and an unusually large number of atoms per unit cell (more than 300) has been known for more than 40 years. Nevertheless boron remains the only element purified in significant quantities whose ground state geometry has not been completely determined by experiments. However theoretical progress reported in the last decade has shed light on numerous properties of elemental boron, leading to a thorough characterization of its structure at ambient conditions, as well as of its electronic and thermodynamic properties. This review discusses in detail the properties of β-boron, as inferred from experiments and the ab-initio theories developed in the last decade.

Structural characterization of electrodeposited boron

Indian Academy of Sciences (India)

Structural characterization of electrodeposited boron was carried out by using transmission electron microscopy and Raman spectroscopy. Electron diffraction and phase contrast imaging were carried out by using transmission electron microscopy. Phase identification was done based on the analysis of electron diffraction ...

Decoupled electron and phonon transports in hexagonal boron nitride-silicene bilayer heterostructure

Energy Technology Data Exchange (ETDEWEB)

Cai, Yongqing; Pei, Qing-Xiang, E-mail: peiqx@ihpc.a-star.edu.sg, E-mail: zhangg@ihpc.a-star.edu.sg; Zhang, Gang, E-mail: peiqx@ihpc.a-star.edu.sg, E-mail: zhangg@ihpc.a-star.edu.sg; Zhang, Yong-Wei [Institute of High Performance Computing, A*STAR, Singapore 138632 (Singapore)

2016-02-14

Calculations based on the density functional theory and empirical molecular dynamics are performed to investigate interlayer interaction, electronic structure and thermal transport of a bilayer heterostructure consisting of silicene and hexagonal boron nitride (h-BN). In this heterostructure, the two layers are found to interact weakly via a non-covalent binding. As a result, the Dirac cone of silicene is preserved with the Dirac cone point being located exactly at the Fermi level, and only a small amount of electrons are transferred from h-BN to silicene, suggesting that silicene dominates the electronic transport. Molecular dynamics calculation results demonstrate that the heat current along h-BN is six times of that along silicene, suggesting that h-BN dominates the thermal transport. This decoupled role of h-BN and silicene in thermal and electronic transport suggests that the BN-silicene bilayer heterostructure is promising for thermoelectric applications.

NEW ADVANCES IN BORON SOIL CHEMISTRY - Paper

Science.gov (United States)

Boron is an essential plant micronutrient for which the range between deficiency and toxicity is narrower than for any other nutrient element. Plants respond directly to the amount of B in soil solution and only indirectly to the amount of B adsorbed on soil particle surfaces. ...

Electron transfer flavoprotein deficiency: Functional and molecular aspects

DEFF Research Database (Denmark)

Schiff, M; Froissart, R; Olsen, Rikke Katrine Jentoft

2006-01-01

Multiple acyl-CoA dehydrogenase deficiency (MADD) is a recessively inherited metabolic disorder that can be due to a deficiency of electron transfer flavoprotein (ETF) or its dehydrogenase (ETF-ubiquinone oxidoreductase). ETF is a mitochondrial matrix protein consisting of alpha- (30kDa) and beta......- (28kDa) subunits encoded by the ETFA and ETFB genes, respectively. In the present study, we have analysed tissue samples from 16 unrelated patients with ETF deficiency, and we report the results of ETF activity, Western blot analysis and mutation analysis. The ETF assay provides a reliable diagnostic...... tool to confirm ETF deficiency in patients suspected to suffer from MADD. Activity ranged from less than 1 to 16% of controls with the most severely affected patients disclosing the lowest activity values. The majority of patients had mutations in the ETFA gene while only two of them harboured...

BF3·Et2O promoted conjugate addition of ethanethiol to electron-deficient alkynes

Institute of Scientific and Technical Information of China (English)

Qing Fa Zhou; Xue Ping Chu; Shen Zhao; Tao Lu; Wei Fang Tang

2012-01-01

An effective method for the synthesis of vinyl thioethers through the conjugate addition of ethanethiol to electron-deficient alkynes promoted by BF3·Et2O has been developed.Electron-deficient internal alkynes react with ethanethiol in this system to yield mainly Z-isomer of vinyl thioether adducts,while electron-deficient terminal alkynes afford mainly E-isomer of vinyl thioether adducts.

First principle study of structural, electronic and magnetic properties of zigzag boron nitride nanoribbon: Role of vacancies

Energy Technology Data Exchange (ETDEWEB)

Kumar, Arun [Department of Physics, Govt. College Banjar, Kullu, Himanchal Pradesh, 175123 India (India); Bahadur, Amar, E-mail: abr.phys@gmail.com [Department of Physics, Kamla Nehru Institute of Physical and Social Sciences, Sultanpur, Uttar Pradesh, 228118 India (India); Mishra, Madhukar [Department of Physics, Birla Institute of Technology and Science, Pilani, Rajasthan, 333031 India (India); Vasudeva, Neena [Department of Physics, S. V. G. College, Ghumarwin, Bilaspur, Himanchal Pradesh, 1714021 India (India)

2015-05-15

We study the effect of vacancies on the structural, electronic and magnetic properties of zigzag boron nitride nanoribbon (ZBNNR) by using first principle calculations. We find that the shift of the vacancies with respect to the ribbon edges causes change in the structural geometry, electronic structure and magnetization of ZBNNR. These vacancies also produce band gap modulation and consequently results the magnetization of ZBNNR.

Response of cotton genotypes to boron under-b-adequate conditions

International Nuclear Information System (INIS)

Shah, J. A.; Sial, M. A.; Hassan, Z. U.; Rajpar, I.

2015-01-01

Balanced boron (B) application is well-known to enhance the cotton production; however, the narrow range between B-deficiency and toxicity levels makes it difficult to manage. Cotton genotypes extensively differ in their response to B requirements. The adequate dose of B for one genotype may be insufficient or even toxic to other genotype. The effects of boron (B) on seed cotton yield and its various yield associated traits were studied on 10 cotton genotypes of Pakistan. The pot studies were undertaken to categorize cotton genotypes using B-deficient (control) and B-adequate (2.0 kg B ha-1) levels arranged in CRD with four repeats. The results indicated that the seed cotton yield, yield attributes and B-uptake of genotypes were comparatively decreased in B-deficient stressed treatment. Genotype NIA-Ufaq exhibited wide range of adaptation and ranked as efficient-responsive, as it produced higher seed cotton yield under both B-regimes. SAU-2 and CIM-506 were highly-efficient and remaining all genotypes were medium-efficient. Genotype Sindh-1 produced low seed cotton yield under B deficient condition and ranked as low-efficient. B-efficient cotton genotypes can be grown in B deficient soils without B application. (author)

π-Extended Isoindigo-Based Derivative: A Promising Electron-Deficient Building Block for Polymer Semiconductors.

Science.gov (United States)

Xu, Long; Zhao, Zhiyuan; Xiao, Mingchao; Yang, Jie; Xiao, Jian; Yi, Zhengran; Wang, Shuai; Liu, Yunqi

2017-11-22

The exploration of novel electron-deficient building blocks is a key task for developing high-performance polymer semiconductors in organic thin-film transistors. In view of the situation of the lack of strong electron-deficient building blocks, we designed two novel π-extended isoindigo-based electron-deficient building blocks, IVI and F 4 IVI. Owing to the strong electron-deficient nature and the extended π-conjugated system of the two acceptor units, their copolymers, PIVI2T and PF 4 IVI2T, containing 2,2'-bithiophene donor units, are endowed with deep-lying highest occupied molecular orbital (HOMO)/lowest unoccupied molecular orbital (LUMO) energy levels and strong intermolecular interactions. In comparison to PIVI2T, the fluorinated PF 4 IVI2T exhibits stronger intra- and intermolecular interactions, lower HOMO/LUMO energy levels up to -5.74/-4.17 eV, and more ordered molecular packing with a smaller π-π stacking distance of up to 3.53 Å, resulting in an excellent ambipolar transporting behavior and a promising application in logic circuits for PF 4 IVI2T in ambient with hole and electron mobilities of up to 1.03 and 1.82 cm 2 V -1 s -1 , respectively. The results reveal that F 4 IVI is a promising and strong electron-deficient building unit to construct high-performance semiconducting polymers, which provides an insight into the structure-property relationships for the exploration and molecular engineering of excellent electron-deficient building blocks in the field of organic electronics.

Electron transfer at boron-doped diamond electrodes modified by graphitic micro-domains

Energy Technology Data Exchange (ETDEWEB)

Mahe, E.; Devilliers, D. [Pierre et Marie Curie Univ., Paris (France). Electrochemistry Lab.; Comninellis, C. [Lausanne Ecole Polytechnique, Lausanne (Switzerland). Groupe de Genie Electrochimique

2006-07-01

Boron-doped (BDD) electrodes have been used in electrolysis procedures for the last 10 years. The mechanical stability of the electrode, its large electrochemical window and its low capacitive current place this new electrode material as an alternative for replacing more costly or toxic materials such as mercury. However, the ferri/ferrocyanide system of boron-doped electrodes has shown contradictory results in the literature. This study proposed a cathodic pre-treatment which relied on the presence of residual graphitic domains formed during the preparation of the BDD film. An experiment was conducted in which the doping procedure was used to control the amount of graphitic phase on the electrode with highly oriented pyrolytic graphite (HOPG) grafted on the BDD surface. Surface characterization with Raman spectroscopy and Scanning Electron Microscopy (SEM) was then carried out using cyclic voltammetry and electrochemical impedance spectroscopy. The electroanalytical determination of the amount of graphitic micro-domains was described and a pulse procedure was proposed which obtained a reproducible surface state. 2 refs., 2 figs.

New Pathways and Metrics for Enhanced, Reversible Hydrogen Storage in Boron-Doped Carbon Nanospaces

Energy Technology Data Exchange (ETDEWEB)

Pfeifer, Peter [University of Missouri; Wexler, Carlos [University of Missouri; Hawthorne, M. Frederick [University of Missouri; Lee, Mark W. [University of Missouri; Jalistegi, Satish S. [University of Missouri

2014-08-14

This project, since its start in 2007—entitled “Networks of boron-doped carbon nanopores for low-pressure reversible hydrogen storage” (2007-10) and “New pathways and metrics for enhanced, reversible hydrogen storage in boron-doped carbon nanospaces” (2010-13)—is in support of the DOE's National Hydrogen Storage Project, as part of the DOE Hydrogen and Fuel Cells Program’s comprehensive efforts to enable the widespread commercialization of hydrogen and fuel cell technologies in diverse sectors of the economy. Hydrogen storage is widely recognized as a critical enabling technology for the successful commercialization and market acceptance of hydrogen powered vehicles. Storing sufficient hydrogen on board a wide range of vehicle platforms, at energy densities comparable to gasoline, without compromising passenger or cargo space, remains an outstanding technical challenge. Of the main three thrust areas in 2007—metal hydrides, chemical hydrogen storage, and sorption-based hydrogen storage—sorption-based storage, i.e., storage of molecular hydrogen by adsorption on high-surface-area materials (carbons, metal-organic frameworks, and other porous organic networks), has emerged as the most promising path toward achieving the 2017 DOE storage targets of 0.055 kg H2/kg system (“5.5 wt%”) and 0.040 kg H2/liter system. The objective of the project is to develop high-surface-area carbon materials that are boron-doped by incorporation of boron into the carbon lattice at the outset, i.e., during the synthesis of the material. The rationale for boron-doping is the prediction that boron atoms in carbon will raise the binding energy of hydro- gen from 4-5 kJ/mol on the undoped surface to 10-14 kJ/mol on a doped surface, and accordingly the hydro- gen storage capacity of the material. The mechanism for the increase in binding energy is electron donation from H2 to electron-deficient B atoms, in the form of sp2 boron-carbon bonds. Our team is proud to have

Investigation of the adsorption properties of borazine and characterisation of boron nitride on Rh(1 1 1) by electron spectroscopic methods

Energy Technology Data Exchange (ETDEWEB)

Farkas, A.P., E-mail: arnold.farkas@chem.u-szeged.hu [Department of Physical Chemistry and Materials Science, University of Szeged, Szeged (Hungary); Török, P. [Department of Physical Chemistry and Materials Science, University of Szeged, Szeged (Hungary); Solymosi, F. [MTA–SZTE Reaction Kinetics and Surface Chemistry Research Group, Szeged, Rerrich B. tér 1, H-6720 Szeged (Hungary); Kiss, J. [Department of Physical Chemistry and Materials Science, University of Szeged, Szeged (Hungary); MTA–SZTE Reaction Kinetics and Surface Chemistry Research Group, Szeged, Rerrich B. tér 1, H-6720 Szeged (Hungary); Kónya, Z. [Department of Applied and Environmental Chemistry, University of Szeged, Szeged (Hungary); MTA–SZTE Reaction Kinetics and Surface Chemistry Research Group, Szeged, Rerrich B. tér 1, H-6720 Szeged (Hungary)

2015-11-01

Graphical abstract: - Highlights: • We provided fingerprint data by Auger electron spectroscopy that makes it possible to differentiate between adsorbed borazine multilayer and h-BN overlayer. • The strong characteristic surface phonon losses in HREELS indicate the production of well defined boron nitride nanomesh on Rh(1 1 1). • Methoxy species were stable even above room temperature on BN covered Rh(1 1 1) and desorbed from the surface after recombination reactions with hydrogen. - Abstract: The adsorption and dissociation of borazine were investigated on Rh(1 1 1) single crystal surface by Auger electron spectroscopy (AES), high resolution electron energy loss spectroscopy (HREELS) and temperature programmed desorption (TPD) methods. Borazine is one of the most frequently applied precursor molecules in the preparation process of boron nitride overlayer on metal single crystal surfaces. On Rh(1 1 1) surface it adsorbs molecularly at 140 K. We did not find any preferred orientation, although there is evidence of “flat” and perpendicular molecular geometry, too. Dehydrogenation starts even below 200 K and finishes until ∼7–800 K. No other boron or nitrogen containing products were observed in TPD beyond molecular borazine. Through the hydrogen loss of molecules hexagonal boron nitride layer forms in the 600–1100 K temperature range as it was indicated by AES and the characteristic optical phonon HREEL losses of h-BN overlayer. The adsorption behaviour of the boron nitride covered surface was also studied through the adsorption of methanol at 140 K. HREELS and TPD measurements showed that methanol adsorbed molecularly and a fraction of it dissociated to form surface methoxy and gas phase hydrogen on the h-BN/Rh(1 1 1) surface.

Leitura SPAD em abacaxizeiro imperial cultivado em deficiência de macronutrientes e de boro Spad reading in imperial pineapple under macronutrientes and boron deficiency

Directory of Open Access Journals (Sweden)

Maria José Mota Ramos

2013-03-01

Full Text Available O equipamento Minolta SPAD-502 mede a intensidade da coloração verde das folhas e tem sido utilizado na quantificação de clorofilas, caracterizando-se pela rapidez, simplicidade e, principalmente, por possibilitar uma avaliação não destrutiva do tecido foliar. O objetivo deste trabalho foi calibrar a leitura SPAD, correlacionando-a com o diagnóstico das deficiências induzidas de macronutrientes e de boro associando às deficiências ao crescimento vegetativo do abacaxizeiro. O experimento constou de oito tratamentos: Completo, -N, -P, -K, -Ca, -Mg, -S e - B, em blocos casualizados completos, com seis repetições. Foram avaliados o comprimento e a largura da folha "D" (marcada e realizadas leituras com o medidor de clorofila SPAD 502. O uso do método de medida indireta da clorofila é adequado para a avaliação do estado nutricional de N e de crescimento vegetativo do abacaxizeiro 'Imperial'. O valor Spad e a concentração foliar de N no tratamento completo são, respectivamente: 75,7 e 14,8 g kg-1, e no deficiente de N: 36,6 e 9,7g kg-1. Com exceção das deficiências de N e P, os demais tratamentos não afetaram a leitura SPAD.The equipment Minolta SPAD-502 measures the intensity of green color of leaves and has been used in the quantification of chlorophyll, characterized by speed, simplicity, and especially by allowing a non-destructive evaluation of the leaf tissue. The objective of this study was to calibrate the SPAD reading and its correlation with the diagnosis of induced deficiencies of macronutrients and boron deficiencies involving the vegetative growth of the pineapple. The experiment consisted of eight treatments: complete, -N,-P, -K, -Ca, -Mg, -S and -B in randomized complete block with six replicates. It was evaluated the length and the width of the sheet "D" (marked and readings taken with the SPAD 502 chlorophyll meter. The use of the method of indirect measurement of chlorophyll is suitable for assessing the

New techniques for producing thin boron films

International Nuclear Information System (INIS)

Thomas, G.E.

1988-01-01

A review will be presented of methods for producing thin boron films using an electron gun. Previous papers have had the problem of spattering of the boron source during the evaporation. Methods for reducing this problem will also be presented. 12 refs., 4 figs

Drawing the geometry of 3d transition metal-boron pairs in silicon from electron emission channeling experiments

CERN Document Server

Silva, Daniel; Wahl, Ulrich; Martins Correia, Joao; Augustyns, Valerie; De Lemos Lima, Tiago Abel; Granadeiro Costa, Angelo Rafael; David Bosne, Eric; Castro Ribeiro Da Silva, Manuel; Esteves De Araujo, Araujo Joao Pedro; Da Costa Pereira, Lino Miguel

2016-01-01

Although the formation of transition metal-boron pairs is currently well established in silicon processing, the geometry of these complexes is still not completely understood. We investigated the lattice location of the transition metals manganese, iron, cobalt and nickel in n- and p+-type silicon by means of electron emission channeling. For manganese, iron and cobalt, we observed an increase of sites near the ideal tetrahedral interstitial position by changing the doping from n- to p+-type Si. Such increase was not observed for Ni. We ascribe this increase to the formation of pairs with boron, driven by Coulomb interactions, since the majority of iron, manganese and cobalt is positively charged in p+-type silicon while Ni is neutral. We propose that breathing mode relaxation around the boron ion within the pair causes the observed displacement from the ideal tetrahedral interstitial site. We discuss the application of the emission channeling technique in this system and, in particular, how it provides insi...

Sintomas visuais de deficiência de macronutrientes e de boro em abacaxizeiro 'imperial' Visual symptons of macronutrients and boron deficiency in 'imperial' pineapple

Directory of Open Access Journals (Sweden)

Maria José Mota Ramos

2009-03-01

Full Text Available O objetivo deste trabalho foi caracterizar os sintomas visuais de deficiências de macronutrientes e de boro no abacaxizeiro 'Imperial', e associá-los à diagnose foliar. Os tratamentos: Completo, - N, - P, - K, -Ca, - Mg, - S e - B foram aplicados como soluções nutritivas, em vasos plásticos com 14 kg de areia de praia purificada e uma muda de abacaxi, como unidade experimental. O delineamento foi em blocos casualizados completos, com seis repetições. Os sintomas visuais de deficiência nutricional foram fotografados e descritos durante todo o processo de crescimento e desenvolvimento das plantas. Avaliaram-se, também, as concentrações foliares de N, P, K, Ca, Mg, S e B na folha 'D', aos cinco, sete, nove e 12 meses após o plantio. A deficiência de N causou amarelecimento das folhas da planta e da coroa dos frutos e descoramento da polpa do fruto; a de P, folhas novas vermelho-arroxeadas e frutos com a casca avermelhada; a de K, necrose do ápice das folhas mais velhas e escurecimento da polpa do fruto; a de Mg, necrose na base das folhas da coroa do fruto, e na deficiência de B, frutos com cortiça e rachadura nos frutilhos e entre eles. Apesar dos baixos teores foliares de S e de Ca, na época da colheita dos frutos, não foram observados sintomas visuais de deficiência nos frutos. Os teores foliares no início dos sintomas de deficiência e na época da colheita dos frutos foram, respectivamente: N = 8,7 e 6,8; P = 0,70 e 0,32; K = 11,6 e 3,2; Mg = 0,73 e 0,54 g kg-1, e B = 5,8 e 5,5 mg kg-1.The objective of this study was to characterize the visual symptoms of macronutrients and boron deficiencies in the pineapple 'Imperial', and involve them in the foliar diagnosis. The full treatment, - N, - P - K, - Ca, - Mg, - and S - B was applied as nutrient solutions in plastic pots with 14 kg of purified sand beach and a seedling of pineapple, as an experimental unit . The design was a randomized complete block with six replicates. The

Preparation of boron-nitrogen films by sputtering

International Nuclear Information System (INIS)

Klose, S.; Winde, B.

1980-01-01

Hard boron-nitrogen films adherent to various substrates can be prepared by sputtering. IR investigations suggest the existence of cubic boron nitride in certain layers. Transmission electron microscope studies have shown a quasi-amorphous structure irregularly incorporating crystallites of zinc blende structure of some nm in diameter

RESPOSTA DO FEIJOEIRO A DOSES DE BORO EM CULTIVO DE INVERNO E DE PRIMAVERA DRY BEAN RESPONSE TO DOSES OF BORON IN WINTER AND SPRING PLANTINGS

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HIPÓLITO ASSUNÇÃO ANTONIO MASCARENHAS

1998-01-01

Full Text Available Um experimento em vasos foi instalado em casa de vegetação com o objetivo de estudar a resposta do feijoeiro à aplicação de boro (B em solo com baixa disponibilidade desse nutriente. Os tratamentos consistiram na aplicação de doses correspondentes a 0, 1, 2, 4, 8 e 16 kg.ha-1 de B, na forma de bórax. Dois ensaios foram desenvolvidos, sendo o primeiro no inverno (junho a julho e o outro na primavera (setembro a outubro. No ensaio do inverno, foi observada a deficiência de B, apenas na testemunha, fato comprovado pela análise de tecidos. Nos demais tratamentos não apareceram sintomas de deficiência e os teores do elemento na parte aérea das plantas foram considerados adequados. No ensaio de primavera, não foi observada deficiência visual de B, mesmo na testemunha. Em ambos os ensaios, aplicações superiores a 2 kg.ha-1 de B proporcionaram teores muito elevados do elemento nas plantas (138 a 710 mg.kg-1. Os dados sugerem que a deficiência é mais relevante no inverno e que o excesso é prejudicial, em qualquer época, ocasionando toxicidade.A greenhouse experiment was conducted to study the effect of boron in dry bean plants (Phaseolus vulgaris L. grown in pots. The treatments consisted of 0, 1, 2, 4, 8, and 16 kg.ha-1 of boron in the form of borax. Two identical experiments were carried out during the winter (June/July and the spring (September/October seasons. In the winter experiment, the boron deficiency symptoms were shown only by the control plants. In those conditions, the high concentrations of Ca and Mg and the low temperatures affected the boron absorption of the plants. The application of 1 kg.ha-1 of boron was sufficient to reduce the visible symptoms of B deficiency, and increased the dry weight of the shoots. At the rate of the 2 kg.ha-1 B or above there was excess of boron in the dry matter of the shoots. In the spring experiment there was no deficiency symptoms in the plants and the boron concentration was adequate

Novel Electronic and Magnetic Properties of Graphene Nanoflakes in a Boron Nitride Layer

Energy Technology Data Exchange (ETDEWEB)

Zhou, Yungang; Wang, Zhiguo; Yang, Ping; Gao, Fei

2012-04-05

Novel electronic and magnetic properties of various-sized graphene nanoflakes (GNFs) embedded in a boron nitride (BN) layer are studied using ab initio methods. The feasibility of synthesizing hybrid GNF-BN structure, a desirable quantum dot structure, is explored. In this structure, photoexcited electrons and holes occupy the same spatial region - the GNF region - which offers an effective way to generate a GNF-based light-emitting device and adjust its emitted optical properties by controlling the size and array of GNF in the BN layer. Based on the important magnetism properties of embedded GNF, we propose a specific configuration to obtain a large spin. Together with the high stability of spin alignment, the proposed configuration can be exploited for spintronic devices.

Pulverization of boron element and proportions of boron carbide in boron

International Nuclear Information System (INIS)

Lang, F.M.; Finck, C.

1956-01-01

It is possible to reduce boron element into fine powder by means of a mortar and pestle made of sintered boron carbide, the ratio of boron carbide introduced being less than one per cent. Boron element at our disposal is made of sharp edged, dark brown, little grains of average size greater than 5 μ. Grain sizes smaller than 1μ are required for applying thin layers of such boron. (author) [fr

Raman spectroscopy of boron-doped single-layer graphene.

Science.gov (United States)

Kim, Yoong Ahm; Fujisawa, Kazunori; Muramatsu, Hiroyuki; Hayashi, Takuya; Endo, Morinobu; Fujimori, Toshihiko; Kaneko, Katsumi; Terrones, Mauricio; Behrends, Jan; Eckmann, Axel; Casiraghi, Cinzia; Novoselov, Kostya S; Saito, Riichiro; Dresselhaus, Mildred S

2012-07-24

The introduction of foreign atoms, such as nitrogen, into the hexagonal network of an sp(2)-hybridized carbon atom monolayer has been demonstrated and constitutes an effective tool for tailoring the intrinsic properties of graphene. Here, we report that boron atoms can be efficiently substituted for carbon in graphene. Single-layer graphene substitutionally doped with boron was prepared by the mechanical exfoliation of boron-doped graphite. X-ray photoelectron spectroscopy demonstrated that the amount of substitutional boron in graphite was ~0.22 atom %. Raman spectroscopy demonstrated that the boron atoms were spaced 4.76 nm apart in single-layer graphene. The 7-fold higher intensity of the D-band when compared to the G-band was explained by the elastically scattered photoexcited electrons by boron atoms before emitting a phonon. The frequency of the G-band in single-layer substitutionally boron-doped graphene was unchanged, which could be explained by the p-type boron doping (stiffening) counteracting the tensile strain effect of the larger carbon-boron bond length (softening). Boron-doped graphene appears to be a useful tool for engineering the physical and chemical properties of graphene.

Structure and photoluminescence of boron and nitrogen co-doped carbon nanorods

Energy Technology Data Exchange (ETDEWEB)

Wang, B.B. [College of Chemistry and Chemical Engineering, Chongqing University of Technology, 69 Hongguang Rd, Lijiatuo, Banan District, Chongqing 400054 (China); Gao, B. [College of Computer Science, Chongqing University, Chongqing 400044 (China); Chongqing Municipal Education Examinations Authority, Chongqing 401147 (China); Zhong, X.X., E-mail: xxzhong@sjtu.edu.cn [Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Shao, R.W.; Zheng, K. [Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124 (China)

2016-07-15

Graphical abstract: Boron- and nitrogen- doped carbon nanorods. - Highlights: • The co-doping of nitrogen and boron in carbon nanorods. • The doping mechanism of nitrogen and boron in carbon nanorods by plasma. • Photoluminescence properties of nitrogen- and boron-doped carbon nanorods. - Abstract: Boron and nitrogen doped carbon nanorods (BNCNRs) were synthesized by plasma-enhanced hot filament chemical vapor deposition, where methane, nitrogen and hydrogen were used as the reaction gases and boron carbide was the boron source. The results of scanning electron microscopy, micro-Raman spectroscopy, transmission electron microscopy and X-ray photoelectron spectroscopy indicate that boron and nitrogen can be used as co-dopants in amorphous carbon nanorods. Combined with the characterization results, the doping mechanism was studied. The mechanism is used to explain the formation of different carbon materials by different methods. The photoluminescence (PL) properties of BNCNRs were studied. The PL results show that the BNCNRs generate strong green PL bands and weak blue PL bands, and the PL intensity lowered due to the doping of boron. The outcomes advance our knowledge on the synthesis and optical properties of carbon-based nanomaterials and contribute to the development of optoelectronic nanodevices based on nano-carbon mateirals.

The atomic and electronic structure of nitrogen- and boron-doped phosphorene.

Science.gov (United States)

Boukhvalov, Danil W

2015-10-28

First principles modeling of nitrogen- and boron-doped phosphorene demonstrates the tendency toward the formation of highly ordered structures. Nitrogen doping leads to the formation of -N-P-P-P-N- lines. Further transformation into -P-N-P-N- lines across the chains of phosphorene occurs with increasing band gap and increasing nitrogen concentration, which coincides with the decreasing chemical activity of N-doped phosphorene. In contrast to the case of nitrogen, boron atoms prefer to form -B-B- pairs with the further formation of -P-P-B-B-P-P- patterns along the phosphorene chains. The low concentration of boron dopants converts the phosphorene from a semiconductor into a semimetal with the simultaneous enhancement of its chemical activity. Co-doping of phosphorene by both boron and nitrogen starts from the formation of -B-N- pairs, which provides flat bands and further transformation of these pairs into hexagonal BN lines and ribbons across the phosphorene chains.

Boron oxide–tin oxide/graphene composite as anode materials for lithium ion batteries

International Nuclear Information System (INIS)

Wen, Lina; Qin, Xue; Meng, Wei; Cao, Ning; Song, Zhonghai

2016-01-01

Highlights: • B_2O_3–SnO_2/G anode material is prepared by chemical heat solvent method for LIBs. • B_2O_3–SnO_2/G shows much improved cycling performance and rate capability. • B_2O_3 plays an important role in improving the performance. - Abstract: B_2O_3–SnO_2/graphene (B_2O_3–SnO_2/G) composite is fabricated via a chemical heat solvent method and utilized as anode material for lithium ion batteries. The added B_2O_3 dramatically improves the electrochemical performance of lithium ion batteries compared to the SnO_2/G composite. The B_2O_3–SnO_2/G composites as anode show an outstanding discharge capacity of 1404.9 mAh g"−"1 at 500 mA g"−"1 after 200 cycles and an excellent rate capacity, which apparently outperforms the previously reported SnO_2-based anode material. These improved electrochemical performance characteristics are due to the B_2O_3 played a buffering role, which are easily beneficial for accommodating the volume change during the lithium ions insertion/extraction processes. Furthermore, boron atoms can accept electrons for its electron-deficient nature and boron ions could release electrons, which lead to electrons' increased density and conductivity are increased. The results indicate that the B_2O_3–SnO_2/G composite is a promising anode material for lithium ion batteries.

Influence of dopants, particularly carbon, on β-rhombohedral boron

Science.gov (United States)

Werheit, H.; Flachbart, K.; Pristáš, G.; Lotnyk, D.; Filipov, V.; Kuhlmann, U.; Shitsevalova, N.; Lundström, T.

2017-09-01

Due to the high affinity of carbon to boron, the preparation of carbon-free boron is problematic. Even high-purity (6 N) β-rhombohedral boron contains 30-60 ppm of C. Hence, carbon affects the boron physical properties published so far more or less significantly. We studied well-defined carbon-doped boron samples based on pure starting material carefully annealed with up to about 1% C, thus assuring homogeneity. We present and discuss their electrical conductivity, optical absorption, luminescence and phonon spectra. Earlier attempts of other authors to determine the conductivity of C-doped boron are revised. Our results allow estimating the effects of oxygen and iron doping on the electrical conductivity using results taken from literature. Discontinuities at low T impair the electronic properties.

Reactive sputter deposition of boron nitride

International Nuclear Information System (INIS)

Jankowski, A.F.; Hayes, J.P.; McKernan, M.A.; Makowiecki, D.M.

1995-10-01

The preparation of fully dense, boron targets for use in planar magnetron sources has lead to the synthesis of Boron Nitride (BN) films by reactive rf sputtering. The deposition parameters of gas pressure, flow and composition are varied along with substrate temperature and applied bias. The films are characterized for composition using Auger electron spectroscopy, for chemical bonding using Raman spectroscopy and for crystalline structure using transmission electron microscopy. The deposition conditions are established which lead to the growth of crystalline BN phases. In particular, the growth of an adherent cubic BN coating requires 400--500 C substrate heating and an applied -300 V dc bias

Coupling of dextrans conjugated with boron to gamma globulin: a model for NCT

International Nuclear Information System (INIS)

Elmore, J.J. Jr.; Borg, D.C.; Micca, P.; Gabel, D.

1983-01-01

Our project is to meet more effectively the well known primary requirement for treatment with boron-10 neutron capture therapy (NCT): namely, the selective localization of a sufficient amount of boron in or on target cells. Monoclonal antibodies (MCA) to tumor-associated antigens are attractive targeting carriers for boron-10 in terms of the needed selective localization. However the densities of surface receptors on tumor cells have seemed deficient to achieve successful NCT. If one seeks the necessary radiotherapeutic ratios by increasing the numbers of boron atoms or carborane cages bound per MCA, then inactivation of the antibody can occur through loss of receptor specificity and/or by precipitation of the protein. To achieve the goal of overcoming the limitations of antibody binding capacity, we have elected to use water-soluble dextrans as intermediate carriers. This permits each MCA molecule to target many atoms of boron-10 to the specified antigenic receptors while only 5 to 10 of the amino acid residues of the protein are conjugated by dextrans carrying boron-10

A feasibility study of boron-loaded liquid scintillator for the detection of electron anti-neutrinos

CERN Document Server

Wang, S C; Leung, R W S; Wang, S L; Chang, C Y; Chen Chi Ping; Cheng, K C; Ho, T I; Lai, W P; Liu, H M; Mao, Z P; Shih, I C; Wong, H T; Yu, Z Q

1999-01-01

Boron-loaded liquid scintillator offers some potential advantages as a detector for electron anti-neutrinos. A research program was carried out with the objective of developing such scintillators. The crucial feature is the pulse shape discrimination properties following the neutron capture by sup 1 sup 0 B. Results of the R and D efforts are presented. The feasibility and the technical difficulties of carrying out a full-scale neutrino experiment based on this approach are discussed. (author)

Isotope engineering of van der Waals interactions in hexagonal boron nitride

Science.gov (United States)

Vuong, T. Q. P.; Liu, S.; van der Lee, A.; Cuscó, R.; Artús, L.; Michel, T.; Valvin, P.; Edgar, J. H.; Cassabois, G.; Gil, B.

2018-02-01

Hexagonal boron nitride is a model lamellar compound where weak, non-local van der Waals interactions ensure the vertical stacking of two-dimensional honeycomb lattices made of strongly bound boron and nitrogen atoms. We study the isotope engineering of lamellar compounds by synthesizing hexagonal boron nitride crystals with nearly pure boron isotopes (10B and 11B) compared to those with the natural distribution of boron (20 at% 10B and 80 at% 11B). On the one hand, as with standard semiconductors, both the phonon energy and electronic bandgap varied with the boron isotope mass, the latter due to the quantum effect of zero-point renormalization. On the other hand, temperature-dependent experiments focusing on the shear and breathing motions of adjacent layers revealed the specificity of isotope engineering in a layered material, with a modification of the van der Waals interactions upon isotope purification. The electron density distribution is more diffuse between adjacent layers in 10BN than in 11BN crystals. Our results open perspectives in understanding and controlling van der Waals bonding in layered materials.

Electronic properties of Mn-decorated silicene on hexagonal boron nitride

KAUST Repository

Kaloni, Thaneshwor P.; Gangopadhyay, S.; Jones, Burton; Schwingenschlö gl, Udo; Singh, Nirpendra

2013-01-01

We study silicene on hexagonal boron nitride, using first-principles calculations. Since hexagonal boron nitride is semiconducting, the interaction with silicene is weaker than for metallic substrates. It therefore is possible to open a 50 meV band gap in the silicene. We further address the effect of Mn decoration by determining the onsite Hubbard interaction parameter, which turns out to differ significantly for decoration at the top and hollow sites. The induced magnetism in the system is analyzed in detail.

Electronic properties of Mn-decorated silicene on hexagonal boron nitride

KAUST Repository

Kaloni, Thaneshwor P.

2013-12-17

We study silicene on hexagonal boron nitride, using first-principles calculations. Since hexagonal boron nitride is semiconducting, the interaction with silicene is weaker than for metallic substrates. It therefore is possible to open a 50 meV band gap in the silicene. We further address the effect of Mn decoration by determining the onsite Hubbard interaction parameter, which turns out to differ significantly for decoration at the top and hollow sites. The induced magnetism in the system is analyzed in detail.

Digital gene expression analysis of corky split vein caused by boron deficiency in 'Newhall' Navel Orange (Citrus sinensis Osbeck for selecting differentially expressed genes related to vascular hypertrophy.

Directory of Open Access Journals (Sweden)

Cheng-Quan Yang

Full Text Available Corky split vein caused by boron (B deficiency in 'Newhall' Navel Orange was studied in the present research. The boron-deficient citrus exhibited a symptom of corky split vein in mature leaves. Morphologic and anatomical surveys at four representative phases of corky split veins showed that the symptom was the result of vascular hypertrophy. Digital gene expression (DGE analysis was performed based on the Illumina HiSeq™ 2000 platform, which was applied to analyze the gene expression profilings of corky split veins at four morphologic phases. Over 5.3 million clean reads per library were successfully mapped to the reference database and more than 22897 mapped genes per library were simultaneously obtained. Analysis of the differentially expressed genes (DEGs revealed that the expressions of genes associated with cytokinin signal transduction, cell division, vascular development, lignin biosynthesis and photosynthesis in corky split veins were all affected. The expressions of WOL and ARR12 involved in the cytokinin signal transduction pathway were up-regulated at 1(st phase of corky split vein development. Furthermore, the expressions of some cell cycle genes, CYCs and CDKB, and vascular development genes, WOX4 and VND7, were up-regulated at the following 2(nd and 3(rd phases. These findings indicated that the cytokinin signal transduction pathway may play a role in initiating symptom observed in our study.

Mass spectrometric investigation of vinyl-substituted organic boron compounds

International Nuclear Information System (INIS)

Tarielashvili, V.O.; Ordzhonikidze, K.G.; Parulava, L.P.; Vakhaniya, G.V.

1992-01-01

Mass spectrometric investigation of vinyl-substituted organic compounds was conducted. Ionization was performed by electron shock. Possibility of determining boron isotope content is all analyzed organic boron vinyl-substituted compounds by direct method is shown. This simplifies sufficiently and lowers the price of analysis, improves its accuracy and rapidity

Photochemical reactions of electron-deficient olefins with N,N,N',N'-tetramethylbenzidine via photoinduced electron-transfer

International Nuclear Information System (INIS)

Pan Yang; Zhao Junshu; Ji Yuanyuan; Yan Lei; Yu Shuqin

2006-01-01

Photoinduced electron transfer reactions of several electron-deficient olefins with N,N,N',N'-tetramethylbenzidine (TMB) in acetonitrile solution have been studied by using laser flash photolysis technique and steady-state fluorescence quenching method. Laser pulse excitation of TMB yields 3 TMB* after rapid intersystem crossing from 1 TMB*. The triplet which located at 480 nm is found to undergo fast quenching with the electron acceptors fumaronitrile (FN), dimethyl fumarate (DMF), diethyl fumarate (DEF), cinnamonitrile (CN), α-acetoxyacrylonitrile (AAN), crotononitrile (CrN) and 3-methoxyacrylonitrile (MAN). Substituents binding to olefin molecule own different electron-donating/withdrawing powers, which determine the electron-deficient property (π-cloud density) of olefin molecule as well as control the electron transfer rate constant directly. The detection of ion radical intermediates in the photolysis reactions confirms the proposed electron transfer mechanism, as expected from thermodynamics. The quenching rate constants of triplet TMB by these olefins have been determined at 510 nm to avoid the disturbance of formed TMB cation radical around 475 nm. All the k q T values approach or reach to the diffusion-controlled limit. In addition, fluorescence quenching rate constants k q S have been also obtained by calculating with Stern-Volmer equation. A correlation between experimental electron transfer rate constants and free energy changes has been explained by Marcus theory of adiabatic outer-sphere electron transfer. Disharmonic k q values for CN and CrN in endergonic region may be the disturbance of exciplexs formation. e of exciplex formation

Boron oxide–tin oxide/graphene composite as anode materials for lithium ion batteries

Energy Technology Data Exchange (ETDEWEB)

Wen, Lina [Department of chemistry, School of Science, Tianjin University, and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072 (China); Qin, Xue, E-mail: qinxue@tju.edu.cn [Department of chemistry, School of Science, Tianjin University, and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072 (China); Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), College of Chemistry, Nankai University, Tianjin 300071 (China); Meng, Wei; Cao, Ning; Song, Zhonghai [Department of chemistry, School of Science, Tianjin University, and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072 (China)

2016-11-15

Highlights: • B{sub 2}O{sub 3}–SnO{sub 2}/G anode material is prepared by chemical heat solvent method for LIBs. • B{sub 2}O{sub 3}–SnO{sub 2}/G shows much improved cycling performance and rate capability. • B{sub 2}O{sub 3} plays an important role in improving the performance. - Abstract: B{sub 2}O{sub 3}–SnO{sub 2}/graphene (B{sub 2}O{sub 3}–SnO{sub 2}/G) composite is fabricated via a chemical heat solvent method and utilized as anode material for lithium ion batteries. The added B{sub 2}O{sub 3} dramatically improves the electrochemical performance of lithium ion batteries compared to the SnO{sub 2}/G composite. The B{sub 2}O{sub 3}–SnO{sub 2}/G composites as anode show an outstanding discharge capacity of 1404.9 mAh g{sup −1} at 500 mA g{sup −1} after 200 cycles and an excellent rate capacity, which apparently outperforms the previously reported SnO{sub 2}-based anode material. These improved electrochemical performance characteristics are due to the B{sub 2}O{sub 3} played a buffering role, which are easily beneficial for accommodating the volume change during the lithium ions insertion/extraction processes. Furthermore, boron atoms can accept electrons for its electron-deficient nature and boron ions could release electrons, which lead to electrons' increased density and conductivity are increased. The results indicate that the B{sub 2}O{sub 3}–SnO{sub 2}/G composite is a promising anode material for lithium ion batteries.

Boron-based nanostructures: Synthesis, functionalization, and characterization

Science.gov (United States)

Bedasso, Eyrusalam Kifyalew

Boron-based nanostructures have not been explored in detail; however, these structures have the potential to revolutionize many fields including electronics and biomedicine. The research discussed in this dissertation focuses on synthesis, functionalization, and characterization of boron-based zero-dimensional nanostructures (core/shell and nanoparticles) and one-dimensional nanostructures (nanorods). The first project investigates the synthesis and functionalization of boron-based core/shell nanoparticles. Two boron-containing core/shell nanoparticles, namely boron/iron oxide and boron/silica, were synthesized. Initially, boron nanoparticles with a diameter between 10-100 nm were prepared by decomposition of nido-decaborane (B10H14) followed by formation of a core/shell structure. The core/shell structures were prepared using the appropriate precursor, iron source and silica source, for the shell in the presence of boron nanoparticles. The formation of core/shell nanostructures was confirmed using high resolution TEM. Then, the core/shell nanoparticles underwent a surface modification. Boron/iron oxide core/shell nanoparticles were functionalized with oleic acid, citric acid, amine-terminated polyethylene glycol, folic acid, and dopamine, and boron/silica core/shell nanoparticles were modified with 3-(amino propyl) triethoxy silane, 3-(2-aminoethyleamino)propyltrimethoxysilane), citric acid, folic acid, amine-terminated polyethylene glycol, and O-(2-Carboxyethyl)polyethylene glycol. A UV-Vis and ATR-FTIR analysis established the success of surface modification. The cytotoxicity of water-soluble core/shell nanoparticles was studied in triple negative breast cancer cell line MDA-MB-231 and the result showed the compounds are not toxic. The second project highlights optimization of reaction conditions for the synthesis of boron nanorods. This synthesis, done via reduction of boron oxide with molten lithium, was studied to produce boron nanorods without any

Innovative boron nitride-doped propellants

Directory of Open Access Journals (Sweden)

Thelma Manning

2016-04-01

Full Text Available The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P. Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower flame temperatures for gun barrels. Further, boron can dope steel, which drastically improves its strength and wear resistance, and can block the formation of softer carbides. A scalable synthesis method for producing boron nitride nano-particles that can be readily dispersed into propellants has been developed. Even dispersion of the nano-particles in a double-base propellant has been demonstrated using a solvent-based processing approach. Stability of a composite propellant with the BN additive was verified. In this paper, results from propellant testing of boron nitride nano-composite propellants are presented, including closed bomb and wear and erosion testing. Detailed characterization of the erosion tester substrates before and after firing was obtained by electron microscopy, inductively coupled plasma and x-ray photoelectron spectroscopy. This promising boron nitride additive shows the ability to improve gun wear and erosion resistance without any destabilizing effects to the propellant. Potential applications could include less erosive propellants in propellant ammunition for large, medium and small diameter fire arms.

A density functional theory study of new boron nanotubes

Energy Technology Data Exchange (ETDEWEB)

Chen, Zhao-Hua [Shijiazhuang Institute of Technology, Shijiazhuang (China); Xie, Zun [Hebei Normal Univ., Shijiazhuang (China). College of Physics Science and Information Engineering and Hebei Advanced Thin Films Lab.

2017-07-01

Using first-principles calculations, a series of new boron nanotubes (BNTs), which show various electronic properties, were theoretically predicted. Stable nanotubes with various chiral vectors and diameters can be formed by rolling up the boron sheet with relative stability [H. Tang and S. I. Beigi, Phys. Rev. B 82, 115412 (2010).]. By increasing the diameter for BNT, the stability is enhanced. The calculated density of states and band structures demonstrate that all the predicted BNTs are metallic, regardless of their diameter and chirality. The multicentre chemical bonds of the relatively stable boron sheet and BNTs are analysed using the deformation electron density. Within our study, the BNTs all have metallic conductive characteristics, in addition to having a low effective quality and high carrier concentration, which are very good nanoconductive material properties and could be combined to form high-power electrodes for lithium-ion batteries such as those used in many modern electronics.

Work Function Characterization of Potassium-Intercalated, Boron Nitride Doped Graphitic Petals

Directory of Open Access Journals (Sweden)

Patrick T. McCarthy

2017-07-01

Full Text Available This paper reports on characterization techniques for electron emission from potassium-intercalated boron nitride-modified graphitic petals (GPs. Carbon-based materials offer potentially good performance in electron emission applications owing to high thermal stability and a wide range of nanostructures that increase emission current via field enhancement. Furthermore, potassium adsorption and intercalation of carbon-based nanoscale emitters decreases work functions from approximately 4.6 eV to as low as 2.0 eV. In this study, boron nitride modifications of GPs were performed. Hexagonal boron nitride is a planar structure akin to graphene and has demonstrated useful chemical and electrical properties when embedded in graphitic layers. Photoemission induced by simulated solar excitation was employed to characterize the emitter electron energy distributions, and changes in the electron emission characteristics with respect to temperature identified annealing temperature limits. After several heating cycles, a single stable emission peak with work function of 2.8 eV was present for the intercalated GP sample up to 1,000 K. Up to 600 K, the potassium-intercalated boron nitride modified sample exhibited improved retention of potassium in the form of multiple emission peaks (1.8, 2.5, and 3.3 eV resulting in a large net electron emission relative to the unmodified graphitic sample. However, upon further heating to 1,000 K, the unmodified GP sample demonstrated better stability and higher emission current than the boron nitride modified sample. Both samples deintercalated above 1,000 K.

Recycling behaviour during long pulse discharges after ICRF boronization in the HT-7 tokamak

International Nuclear Information System (INIS)

Huang, J.; Wan, B.N.; Li, J.G.; Gong, X.Z.; Zhang, X.D.; Wu, Z.W.; Zhou, Q.

2006-01-01

The evolution of recycling behaviour has been investigated during long pulse discharges in the HT-7 tokamak after ICRF boronization (C 2 B 10 H 12 ) using the H/(H+D) ratio and the edge recycling coefficient R. After boronization, impurity reduction is observed, attributed to the fresh boron film, but the recycling coefficient can exceed unity due to a large amount of hydrogen absorbed in the film, leading to an uncontrollable density rise and discharge termination. When the H/(H+D) ratio was reduced to less than 25%, the electron density was easily controlled. The longest discharge, up to 240 s with central electron temperature T e (0) of about 1.0 keV and central electron density n e (0) of 0.8 x 10 19 m -3 , was achieved following boronization. After many discharges the effectiveness of boron film was weakened, and the density rise was correlated with an increase in both carbon and oxygen radiation which limited the duration of long pulse discharges

Electronic structure and optical properties of boron nitride nanotube bundles from first principles

Science.gov (United States)

Behzad, Somayeh

2015-06-01

The electronic and optical properties of bundled armchair and zigzag boron nitride nanotubes (BNNTs) are investigated by using density functional theory. Owing to the inter-tube coupling, the dispersions along the tube axis and in the plane perpendicular to the tube axis of BNNT bundles are significantly varied, which are characterized by the decrease of band gap, the splitting of the doubly degenerated states, the expansions of valence and conduction bands. The calculated dielectric functions of the armchair and zigzag bundles are similar to that of the isolated tubes, except for the appearance of broadened peaks, small shifts of peak positions about 0.1 eV and increasing of peak intensities.

Negligible Electronic Interaction between Photoexcited Electron-Hole Pairs and Free Electrons in Phosphorus-Boron Co-Doped Silicon Nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Limpens, Rens [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Neale, Nathan R [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Fujii, Minoru [Kobe University; Gregorkiewicz, Tom [University of Amsterdam

2018-03-05

Phosphorus (P) and boron (B) co-doped Si nanocrystals (NCs) have raised interest in the optoelectronic industry due to their electronic tunability, optimal carrier multiplication properties, and straightforward dispersibility in polar solvents. Yet a basic understanding of the interaction of photoexcited electron-hole (e-h) pairs with new physical features that are introduced by the co-doping process (free carriers, defect states, and surface chemistry) is missing. Here, we present the first study of the ultrafast carrier dynamics in SiO2-embedded P-B co-doped Si NC ensembles using induced absorption spectroscopy through a two-step approach. First, the induced absorption data show that the large fraction of the dopants residing on the NC surface slows down carrier relaxation dynamics within the first 20 ps relative to intrinsic (undoped) Si NCs, which we interpret as enhanced surface passivation. On longer time-scales (picosecond to nanosecond regime), we observe a speeding up of the carrier relaxation dynamics and ascribe it to doping-induced trap states. This argument is deduced from the second part of the study, where we investigate multiexciton interactions. From a stochastic modeling approach we show that localized carriers, which are introduced by the P or B dopants, have minor electronic interactions with the photoexcited e-h pairs. This is understood in light of the strong localization of the introduced carriers on their original P- or B-dopant atoms, due to the strong quantum confinement regime in these relatively small NCs (<6 nm).

Structural Modification in Carbon Nanotubes by Boron Incorporation

Directory of Open Access Journals (Sweden)

Handuja Sangeeta

2009-01-01

Full Text Available Abstract We have synthesized boron-incorporated carbon nanotubes (CNTs by decomposition of ferrocene and xylene in a thermal chemical vapor deposition set up using boric acid as the boron source. Scanning and transmission electron microscopy studies of the synthesized CNT samples showed that there was deterioration in crystallinity and improvement in alignment of the CNTs as the boron content in precursor solution increased from 0% to 15%. Raman analysis of these samples showed a shift of ~7 cm−1in wave number to higher side and broadening of the G band with increasing boron concentration along with an increase in intensity of the G band. Furthermore, there was an increase in the intensity of the D band along with a decrease in its wave number position with increase in boron content. We speculate that these structural modifications in the morphology and microstructure of CNTs might be due to the charge transfer from boron to the graphite matrix, resulting in shortening of the carbon–carbon bonds.

Irradiation damage in boron carbide: point defects, clusters and helium bubbles

International Nuclear Information System (INIS)

Stoto, T.; Zuppiroli, L.

1986-06-01

Boron carbide is a refractory hard and light material of interest in nuclear technology (fission and also fusion). Transmission electron microscopy was used to examine the properties of radiation induced damage. Firstly, the production of point defects and their clustering was studied in samples irradiated by 1 MeV electron in a high voltage electron microscope at selected temperatures from 12 K to 1000 K. Secondly, conventional transmission electron microscopy was used to understand the production of helium bubbles in neutron irradiated boron carbide and their role in the generation of microcracks. Finally, the interaction between point defects and bubbles was also examined

Boron dose determination for BNCT using Fricke and EPR dosimetry

International Nuclear Information System (INIS)

Wielopolski, L.; Ciesielski, B.

1995-01-01

In Boron Neutron Capture Therapy (BNCT) the dominant dose delivered to the tumor is due to α and 7 Li charged particles resulting from a neutron capture by 10 B and is referred to herein as the boron dose. Boron dose is directly attributable to the following two independent factors, one boron concentration and the neutron capture energy dependent cross section of boron, and two the energy spectrum of the neutrons that interact with boron. The neutron energy distribution at a given point is dictated by the incident neutron energy distribution, the depth in tissue, geometrical factors such as beam size and patient's dimensions. To account for these factors can be accommodated by using Monte Carlo theoretical simulations. However, in conventional experimental BNCT dosimetry, e.g., using TLDs or ionization chambers, it is only possible to estimate the boron dose. To overcome some of the limitations in the conventional dosimetry, modifications in ferrous sulfate dosimetry (Fricke) and Electron Paramagnetic Resonance (EPR) dosimetry in alanine, enable to measure specifically boron dose in a mixed gamma neutron radiation fields. The boron dose, in either of the dosimeters, is obtained as a difference between measurements with boronated and unboronated dosimeters. Since boron participates directly in the measurements, the boron dosimetry reflects the true contribution, integral of the neutron energy spectrum with boron cross section, of the boron dose to the total dose. Both methods are well established and used extensively in dosimetry, they are presented briefly here

Boron solubility in Fe-Cr-B cast irons

International Nuclear Information System (INIS)

Guo Changqing; Kelly, P.M.

2003-01-01

Boron solubility in the as-cast and solution treated martensite of Fe-Cr-B cast irons, containing approximately 1.35 wt.% of boron, 12 wt.% of chromium, as well as other alloying elements, has been investigated using conventional microanalysis. The significant microstructural variations after tempering at 750 deg. C for 0.5-4 h, compared with the original as-cast and solution treated microstructures, indicated that the matrix consisted of boron and carbon supersaturated solid solutions. The boron solubility detected by electron microprobe was between 0.185-0.515 wt.% for the as-cast martensite and 0.015-0.0589 wt.% for the solution treated martensite, much higher than the accepted value of 0.005 wt.% in pure iron. These remarkable increases are thought to be associated with some metallic alloying element addition, such as chromium, vanadium and molybdenum, which have atomic diameters larger than iron, and expand the iron lattice to sufficiently allow boron atoms to occupy the interstitial sites in iron lattice

A protocol for amide bond formation with electron deficient amines and sterically hindered substrates

DEFF Research Database (Denmark)

Due-Hansen, Maria E; Pandey, Sunil K; Christiansen, Elisabeth

2016-01-01

A protocol for amide coupling by in situ formation of acyl fluorides and reaction with amines at elevated temperature has been developed and found to be efficient for coupling of sterically hindered substrates and electron deficient amines where standard methods failed.......A protocol for amide coupling by in situ formation of acyl fluorides and reaction with amines at elevated temperature has been developed and found to be efficient for coupling of sterically hindered substrates and electron deficient amines where standard methods failed....

Recombination and photosensitivity centres in boron nitride irradiated with ions

International Nuclear Information System (INIS)

Kabyshev, A.; Konusov, F.; Lopatin, V.

2001-01-01

The physical-chemical processes, taking place during the irradiation of dielectrics with ions distort the electron structure of the compounds and generate additional localise state in the forbidden zone (FZ). Consequently, the semiconductor layer with the specific surface density of σ ≥ 10 -10 S/ forms on the surface of the dielectric. In addition to his, the high concentration of the radiation-induced defects changes the optical and photoelectric properties of the materials and also the energy characteristics. Analysis of the photoelectric properties indicates that the recombination processes take part in electric transport. These processes restricted the increase of the photosensitivity and changing the kinetics of relaxation of photo conductivity (σ hv ). The practical application of the boron nitride (BN) the in the thermonuclear systems (for example, Ref. 7), stimulates research into the reasons for the deceleration of its properties under the effect of radiation of various types. The conductivity of non-irradiated boron nitride is of the electron-hole nature with a large fraction of the activation component in exchange of the charge carriers between the levels of the defects and the forbidden zones. On the basis of the correlation of the energy and kinetic parameters of luminescence and , the authors of Ref. 8 constructed a model of electron transfers accompanying the electric transport of the boron nitride. In addition to ion-thermal modification, the conductivity of boron nitride is also of the electron-hole nature and is accompanied by luminescence. Examination of the characteristics of luminescence may be useful for obtaining more information on the transport mechanism. In this work, in order to clarify the main parameters of the forbidden band, detailed investigations were carried out into the spectrum of the electronic states of radiation defects which determine the photoelectric and luminescence properties of the modified boron nitride. The

Electron screening effects in (p,α) reactions induced on boron isotopes studied via the Trojan Horse Method

International Nuclear Information System (INIS)

Lamia, L; Spitaleri, C; Cherubini, S; Gulino, M; Puglia, S M R; Rapisarda, G G; Romano, S; Sergi, M L; Carlin, N; Gameiro Munhoz, M; Gimenez Del Santo, M; Kiss, G G; Somorjai, E; Kroha, V; Kubono, S; La Cognata, M; Pizzone, R G; Li, C; Wen, Qungang; Mukhamedzhanov, A

2013-01-01

The Trojan Horse Method is a powerful indirect technique allowing one to measure the bare nucleus S(E)-factor and the electron screening potential for astrophysically relevant reactions without the needs of extrapolations. The case of the (p,α) reactions induced on the two boron isotopes 10,11 B is here discussed in view of the recent Trojan Horse (TH) applications to the quasi-free 10,11 B+ 2 H reactions. The comparison between the TH and the low-energy direct data allowed us to determine the electron screening potential for the 11 B(p,α) reaction, while preliminary results on the 10 B(p,α) reaction have been extracted.

Auger electron spectroscopy analysis for growth interface of cubic boron nitride single crystals synthesized under high pressure and high temperature

Science.gov (United States)

Lv, Meizhe; Xu, Bin; Cai, Lichao; Guo, Xiaofei; Yuan, Xingdong

2018-05-01

After rapid cooling, cubic boron nitride (c-BN) single crystals synthesized under high pressure and high temperature (HPHT) are wrapped in the white film powders which are defined as growth interface. In order to make clear that the transition mechanism of c-BN single crystals, the variation of B and N atomic hybrid states in the growth interface is analyzed with the help of auger electron spectroscopy in the Li-based system. It is found that the sp2 fractions of B and N atoms decreases, and their sp3 fractions increases from the outer to the inner in the growth interface. In addition, Lithium nitride (Li3N) are not found in the growth interface by X-ray diffraction (XRD) experiment. It is suggested that lithium boron nitride (Li3BN2) is produced by the reaction of hexagonal boron nitride (h-BN) and Li3N at the first step, and then B and N atoms transform from sp2 into sp3 state with the catalysis of Li3BN2 in c-BN single crystals synthesis process.

Engineering the interface characteristics on the enhancement of field electron emission properties of vertically aligned hexagonal boron nitride nanowalls

Energy Technology Data Exchange (ETDEWEB)

Sankaran, K.J.; Hoang, D.Q.; Drijkoningen, S.; Pobedinskas, P.; Haenen, K. [Institute for Materials Research (IMO), Hasselt University, Diepenbeek (Belgium); IMOMEC, IMEC vzw, Diepenbeek (Belgium); Srinivasu, K.; Leou, K.C. [Department of Engineering and System Science, National Tsing Hua University, Hsinchu (China); Korneychuk, S.; Turner, S.; Verbeeck, J. [Electron Microscopy for Materials Science (EMAT), University of Antwerp (Belgium); Lin, I.N. [Department of Physics, Tamkang University, Tamsui (China)

2016-10-15

Utilization of Au and nanocrystalline diamond (NCD) as interlayers noticeably modifies the microstructure and field electron emission (FEE) properties of hexagonal boron nitride nanowalls (hBNNWs) grown on Si substrates. The FEE properties of hBNNWs on Au could be turned on at a low turn-on field of 14.3 V μm{sup -1}, attaining FEE current density of 2.58 mA cm{sup -2} and life-time stability of 105 min. Transmission electron microscopy reveals that the Au-interlayer nucleates the hBN directly, preventing the formation of amorphous boron nitride (aBN) in the interface, resulting in enhanced FEE properties. But Au forms as droplets on the Si substrate forming again aBN at the interface. Conversely, hBNNWs on NCD shows superior in life-time stability of 287 min although it possesses inferior FEE properties in terms of larger turn-on field and lower FEE current density as compared to that of hBNNWs-Au. The uniform and continuous NCD film on Si also circumvents the formation of aBN phases and allows hBN to grow directly on NCD. Incorporation of carbon in hBNNWs from the NCD-interlayer improves the conductivity of hBNNWs, which assists in transporting the electrons efficiently from NCD to hBNNWs that results in better field emission of electrons with high life-time stability. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Qualidade sensorial dos frutos do abacaxizeiro 'imperial' cultivado em deficiência de macronutrientes e de boro Sensorial quality of the fruits of 'imperial' pineapple cultivated in macronutrient and boron deficiencies

Directory of Open Access Journals (Sweden)

Maria José Mota Ramos

2010-09-01

of a green house experiment of the North Fluminense State University , in Campos dos Goytacazes, RJ, in the period from 2003 to 2005 to evaluate the effects of the macronutrients and boron deficiencies on the physico- chemical composicion and sensorial quality of fruits. The experimental unit consisted of a 14 L plastic pot filled with purified sand and a seedling of that cultivar. The following treatments were used: complete, - N, - P, - K, - Ca, - Mg, - S and - B, applied as nutrient solutions, in randomized complete blocks, with six replicates. The following characteristics were measured in the fruits: firmness, juice concentration, TA, TSS, TSS/TA, vitamin C, pH, coloration and the sensorial analysis of the pulp. The deficiencies of N and of K increased the pulp firmness but that of S reduced it. The deficiencies of N and S increased the TA and the concentration of vitamin C but they reduced the relationship TSS/TA, the coloration of the pulp and the pH. The deficiency of K reduced TSS and that of Ca and S increased it. The deficiencies of N and K reduced the sensorial acceptance of the fruits.The deficiencies of P, Mg and B did not alter the sensory properties of pineapple.

Effects of the Substituents of Boron Atoms on Conjugated Polymers Containing B←N Units.

Science.gov (United States)

Liu, Jun; Wang, Tao; Dou, Chuandong; Wang, Lixiang

2018-06-15

Organoboron chemistry is a new tool to tune the electronic structures and properties of conjugated polymers, which are important for applications in organic opto-electronic devices. To investigate the effects of substituents of boron atoms on conjugated polymers, we synthesized three conjugated polymers based on double B←N bridged bipyridine (BNBP) with various substituents on the boron atoms. By changing the substituents from four phenyl groups and two phenyl groups/two fluorine atoms to four fluorine atoms, the BNBP-based polymers show the blue-shifted absorption spectra, decreased LUMO/HOMO energy levels and enhanced electron affinities, as well as the increased electron mobilities. Moreover, these BNBP-based polymers can be used as electron acceptors for all-polymer solar cells. These results demonstrate that the substituents of boron atoms can effectively modulate the electronic properties and applications of conjugated polymers. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electron transport in polycyclic aromatic hydrocarbons/boron nitride hybrid structures: density functional theory combined with the nonequilibrium Green's function.

Science.gov (United States)

Panahi, S F K S; Namiranian, Afshin; Soleimani, Maryam; Jamaati, Maryam

2018-02-07

We investigate the electronic transport properties of two types of junction based on single polyaromatic hydrocarbons (PAHs) and PAHs embedded in boron nitride (h-BN) nanoribbons, using nonequilibrium Green's functions (NEGF) and density functional theory (DFT). In the PAH junctions, a Fano resonance line shape at the Fermi energy in the transport feature can be clearly seen. In hybrid junctions, structural asymmetries enable interactions between the electronic states, leading to observation of interface-based transport. Our findings reveal that the interface of PAH/h-BN strongly affects the transport properties of the structures.

Depth resolved investigations of boron implanted silicon

Science.gov (United States)

Sztucki, M.; Metzger, T. H.; Milita, S.; Berberich, F.; Schell, N.; Rouvière, J. L.; Patel, J.

2003-01-01

We have studied the depth distribution and structure of defects in boron implanted silicon (0 0 1). Silicon wafers were implanted with a boron dose of 6×10 15 ions/cm -2 at 32 keV and went through different annealing treatments. Using diffuse X-ray scattering at grazing incidence and exit angles we are able to distinguish between different kinds of defects (point defect clusters and extrinsic stacking faults on {1 1 1} planes) and to determine their depth distribution as a function of the thermal budget. Cross-section transmission electron microscopy was used to gain complementary information. In addition we have determined the strain distribution caused by the boron implantation as a function of depth from rocking curve measurements.

Structure and single-phase regime of boron carbides

International Nuclear Information System (INIS)

Emin, D.

1988-01-01

The boron carbides are composed of twelve-atom icosahedral clusters which are linked by direct covalent bonds and through three-atom intericosahedral chains. The boron carbides are known to exist as a single phase with carbon concentrations from about 8 to about 20 at. %. This range of carbon concentrations is made possible by the substitution of boron and carbon atoms for one another within both the icosahedra and intericosahedral chains. The most widely accepted structural model for B 4 C (the boron carbide with nominally 20% carbon) has B/sub 11/C icosahedra with C-B-C intericosahedral chains. Here, the free energy of the boron carbides is studied as a function of carbon concentration by considering the effects of replacing carbon atoms within B 4 C with boron atoms. It is concluded that entropic and energetic considerations both favor the replacement of carbon atoms with boron atoms within the intericosahedral chains, C-B-C→C-B-B. Once the carbon concentration is so low that the vast majority of the chains are C-B-B chains, near B/sub 13/C 2 , subsequent substitutions of carbon atoms with boron atoms occur within the icosahedra, B/sub 11/C→B/sub 12/. Maxima of the free energy occur at the most ordered compositions: B 4 C,B/sub 13/C 2 ,B/sub 14/C. This structural model, determined by studying the free energy, agrees with that previously suggested by analysis of electronic and thermal transport data. These considerations also provide an explanation for the wide single-phase regime found for boron carbides

Thermoelectric properties of boron and boron phosphide CVD wafers

Energy Technology Data Exchange (ETDEWEB)

Kumashiro, Y.; Yokoyama, T.; Sato, A.; Ando, Y. [Yokohama National Univ. (Japan)

1997-10-01

Electrical and thermal conductivities and thermoelectric power of p-type boron and n-type boron phosphide wafers with amorphous and polycrystalline structures were measured up to high temperatures. The electrical conductivity of amorphous boron wafers is compatible to that of polycrystals at high temperatures and obeys Mott`s T{sup -{1/4}} rule. The thermoelectric power of polycrystalline boron decreases with increasing temperature, while that of amorphous boron is almost constant in a wide temperature range. The weak temperature dependence of the thermal conductivity of BP polycrystalline wafers reflects phonon scattering by grain boundaries. Thermal conductivity of an amorphous boron wafer is almost constant in a wide temperature range, showing a characteristic of a glass. The figure of merit of polycrystalline BP wafers is 10{sup -7}/K at high temperatures while that of amorphous boron is 10{sup -5}/K.

Stability of boron-doped graphene/copper interface: DFT, XPS and OSEE studies

Science.gov (United States)

Boukhvalov, D. W.; Zhidkov, I. S.; Kukharenko, A. I.; Slesarev, A. I.; Zatsepin, A. F.; Cholakh, S. O.; Kurmaev, E. Z.

2018-05-01

Two different types of boron-doped graphene/copper interfaces synthesized using two different flow rates of Ar through the bubbler containing the boron source were studied. X-ray photoelectron spectra (XPS) and optically stimulated electron emission (OSEE) measurements have demonstrated that boron-doped graphene coating provides a high corrosion resistivity of Cu-substrate with the light traces of the oxidation of carbon cover. The density functional theory calculations suggest that for the case of substitutional (graphitic) boron-defect only the oxidation near boron impurity is energetically favorable and creation of the vacancies that can induce the oxidation of copper substrate is energetically unfavorable. In the case of non-graphitic boron defects oxidation of the area, a nearby impurity is metastable that not only prevent oxidation but makes boron-doped graphene. Modeling of oxygen reduction reaction demonstrates high catalytic performance of these materials.

Toward deep blue nano hope diamonds: heavily boron-doped diamond nanoparticles.

Science.gov (United States)

Heyer, Steffen; Janssen, Wiebke; Turner, Stuart; Lu, Ying-Gang; Yeap, Weng Siang; Verbeeck, Jo; Haenen, Ken; Krueger, Anke

2014-06-24

The production of boron-doped diamond nanoparticles enables the application of this material for a broad range of fields, such as electrochemistry, thermal management, and fundamental superconductivity research. Here we present the production of highly boron-doped diamond nanoparticles using boron-doped CVD diamond films as a starting material. In a multistep milling process followed by purification and surface oxidation we obtained diamond nanoparticles of 10-60 nm with a boron content of approximately 2.3 × 10(21) cm(-3). Aberration-corrected HRTEM reveals the presence of defects within individual diamond grains, as well as a very thin nondiamond carbon layer at the particle surface. The boron K-edge electron energy-loss near-edge fine structure demonstrates that the B atoms are tetrahedrally embedded into the diamond lattice. The boron-doped diamond nanoparticles have been used to nucleate growth of a boron-doped diamond film by CVD that does not contain an insulating seeding layer.

Effects of application boron on yields, yield component and oil ...

African Journals Online (AJOL)

The study was conducted to investigate the effects of five boron (B) doses; 0, 2.5, 5.0, 7.5 and 10.0 kg B ha-1 in B-deficient calcareous soils on yield and some yield components of four sunflower genotypes. Genotypes have shown variations with respect to their responses to B applications. AS-615 and Coban had the ...

Substitutional Boron in Nanodiamond, Bucky-Diamond, and Nanocrystalline Diamond Grain Boundaries

Energy Technology Data Exchange (ETDEWEB)

Barnard, Amanda S.; Sternberg, Michael G.

2006-10-05

Although boron has been known for many years to be a successful dopant in bulk diamond, efficient doping of nanocrystalline diamond with boron is still being developed. In general, the location, configuration, and bonding structure of boron in nanodiamond is still unknown, including the fundamental question of whether it is located within grains or grain boundaries of thin films and whether it is within the core or at the surface of nanoparticles. Presented here are density functional tight-binding simulations examining the configuration, potential energy surface, and electronic charge of substitutional boron in various types of nanocrystalline diamond. The results predict that boron is likely to be positioned at the surface of isolated particles and at the grain boundary of thin-film samples.

Anode performance of boron-doped graphites prepared from shot and sponge cokes

Science.gov (United States)

Liu, Tao; Luo, Ruiying; Yoon, Seong-Ho; Mochida, Isao

The structures and anode performances of graphitized pristine and boron-doped shot and sponge cokes have been comparatively studied by means of scanning electron microscope (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and galvanostatic measurement. The results show that high degree of graphitization can be obtained by the substituted boron atom in the carbon lattice, and boron in the resultant boron-doped graphites mainly exist in the form of boron carbide and boron substituted in the carbon lattice. Both of boron-doped graphites from shot and sponge cokes obtain discharge capacity of 350 mAh g -1 and coulombic efficiency above 90%. Apart from commonly observed discharge plateau for graphite, boron-doped samples in this study also show a small plateau at ca. 0.06 V. This phenomenon can be explained that Li ion stores in the site to be void-like spaces that are produced by "molecular bridging" between the edge sites of graphene layer stack with a release of boron atoms substituted at the edge of graphene layer. The effect of the amount of boron dopant and graphitization temperature on the anode performance of boron-doped graphite are also investigated in this paper.

Stable synthesis of few-layered boron nitride nanotubes by anodic arc discharge.

Science.gov (United States)

Yeh, Yao-Wen; Raitses, Yevgeny; Koel, Bruce E; Yao, Nan

2017-06-08

Boron nitride nanotubes (BNNTs) were successfully synthesized by a dc arc discharge using a boron-rich anode as synthesis feedstock in a nitrogen gas environment at near atmospheric pressure. The synthesis was achieved independent of the cathode material suggesting that under such conditions the arc operates in so-called anodic mode with the anode material being consumed by evaporation due to the arc heating. To sustain the arc current by thermionic electron emission, the cathode has to be at sufficiently high temperature, which for a typical arc current density of ~100 A/cm 2 , is above the boron melting point (2350 K). With both electrodes made from the same boron-rich alloy, we found that the arc operation unstable due to frequent sticking between two molten electrodes and formation of molten droplets. Stable and reliable arc operation and arc synthesis were achieved with the boron-rich anode and the cathode made from a refractory metal which has a melting temperature above the melting point of boron. Ex-situ characterization of synthesized BNNTs with electron microscopy and Raman spectroscopy revealed that independent of the cathode material, the tubes are primarily single and double walled. The results also show evidence of root-growth of BNNTs produced in the arc discharge.

Application of the boron autoradiography in structural steels

International Nuclear Information System (INIS)

Azevedo, A.L.T. de

1984-01-01

The development of boron containing steels requires a knowledge of the microstructural state of that element, determined by the competition between precipitation and solution.An example of the use of the autoradiographic method for obtaining boron distribution images is described and showed. The technique is based on an α emitting nuclear reaction, which leaves a latent track in cellulose. This detector material is revealed by chemical etching and observed by optical and electron transmission microscopy. (Author) [pt

Stable boron nitride diamondoids as nanoscale materials

International Nuclear Information System (INIS)

Fyta, Maria

2014-01-01

We predict the stability of diamondoids made up of boron and nitrogen instead of carbon atoms. The results are based on quantum-mechanical calculations within density functional theory (DFT) and show some very distinct features compared to the regular carbon-based diamondoids. These features are evaluated with respect to the energetics and electronic properties of the boron nitride diamondoids as compared to the respective properties of the carbon-based diamondoids. We find that BN-diamondoids are overall more stable than their respective C-diamondoid counterparts. The electronic band-gaps (E g ) of the former are overall lower than those for the latter nanostructures but do not show a very distinct trend with their size. Contrary to the lower C-diamondoids, the BN-diamondoids are semiconducting and show a depletion of charge on the nitrogen site. Their differences in the distribution of the molecular orbitals, compared to their carbon-based counterparts, offer additional bonding and functionalization possibilities. These tiny BN-based nanostructures could potentially be used as nanobuilding blocks complementing or substituting the C-diamondoids, based on the desired properties. An experimental realization of boron nitride diamondoids remains to show their feasibility. (paper)

Tunable electronic properties of partially edge-hydrogenated armchair boron-nitrogen-carbon nanoribbons.

Science.gov (United States)

Alaal, Naresh; Medhekar, Nikhil; Shukla, Alok

2018-04-18

We employ a first-principles calculations based density-functional-theory (DFT) approach to study the electronic properties of partially and fully edge-hydrogenated armchair boron-nitrogen-carbon (BNC) nanoribbons (ABNCNRs), with widths between 0.85 nm to 2.3 nm. Due to the partial passivation of edges, the electrons, which do not participate in the bonding, form new energy states located near the Fermi-level. Because of these additional bands, some ABNCNRs exhibit metallic behavior, which is quite uncommon in armchair nanoribbons. Our calculations reveal that metallic behavior is observed for the following passivation patterns: (i) when the B atom from one edge and the N atom from another edge are unpassivated. (ii) when the N atoms from both the edges are unpassivated. (iii) when the C atom from one edge and the N atom from another edge are unpassivated. Furthermore, spin-polarization is also observed for certain passivation schemes, which is also quite uncommon for armchair nanoribbons. Thus, our results suggest that the ABNCNRs exhibit a wide range of electronic and magnetic properties in that the fully edge-hydrogenated ABNCNRs are direct band gap semiconductors, while the partially edge-hydrogenated ones are either semiconducting, or metallic, while simultaneously exhibiting spin polarization, based on the nature of passivation. We also find that the ribbons with larger widths are more stable as compared to the narrower ones.

New Icosahedral Boron Carbide Semiconductors

Science.gov (United States)

Echeverria Mora, Elena Maria

Novel semiconductor boron carbide films and boron carbide films doped with aromatic compounds have been investigated and characterized. Most of these semiconductors were formed by plasma enhanced chemical vapor deposition. The aromatic compound additives used, in this thesis, were pyridine (Py), aniline, and diaminobenzene (DAB). As one of the key parameters for semiconducting device functionality is the metal contact and, therefore, the chemical interactions or band bending that may occur at the metal/semiconductor interface, X-ray photoemission spectroscopy has been used to investigate the interaction of gold (Au) with these novel boron carbide-based semiconductors. Both n- and p-type films have been tested and pure boron carbide devices are compared to those containing aromatic compounds. The results show that boron carbide seems to behave differently from other semiconductors, opening a way for new analysis and approaches in device's functionality. By studying the electrical and optical properties of these films, it has been found that samples containing the aromatic compound exhibit an improvement in the electron-hole separation and charge extraction, as well as a decrease in the band gap. The hole carrier lifetimes for each sample were extracted from the capacitance-voltage, C(V), and current-voltage, I(V), curves. Additionally, devices, with boron carbide with the addition of pyridine, exhibited better collection of neutron capture generated pulses at ZERO applied bias, compared to the pure boron carbide samples. This is consistent with the longer carrier lifetimes estimated for these films. The I-V curves, as a function of external magnetic field, of the pure boron carbide films and films containing DAB demonstrate that significant room temperature negative magneto-resistance (> 100% for pure samples, and > 50% for samples containing DAB) is possible in the resulting dielectric thin films. Inclusion of DAB is not essential for significant negative magneto

Rice and wheat yield improvement by the application of boron in salt affected soils

International Nuclear Information System (INIS)

Mehdi, S.M.; Sarfraz, M.; Hassan, N.M.; Hassan, W.

2007-01-01

In recent past studies on wheat, rice and fruit plant showed that fairly large percentage of soils and crops are deficient in boron. Several times a question rose to study the boron responses in a cropping system to see the residual effect of boron. With the objective in mind, a field experiment was conducted at two sites in saline sodic soils to see the rice and wheat crops response to boron. Boron was applied to rice at the rate of 0.25, 0.50, 1.0, 1.5, and 2.0 Kg ha/sub -1/ as sodium tetra borate. The results showed that both paddy and straw yields increased with the increasing rates of boron and highest yield was obtained from 2 Kg ha/sub -l/. After harvesting of rice crop wheat was sown in the same layout. The treatments were divided into two equal portions. Boron was applied to one portion at the same rates as to rice while remaining half remained as such to study the residual effect of B on wheat. The results showed that grain anti straw yields increased with increasing rates of boron. In case of untreated plots to see the residual effect grain and straw yield increased with increasing rates of boron applied to rice. It was concluded that B applied to rice did show residual effect to the following wheat crop. Therefore, there is no need to apply B to following crop when B is applied to the previous crop. (author)

Effect of Boron and Titanium Addition on the Hot Ductility of Low-Carbon Nb-Containing Steel

Science.gov (United States)

Liu, Wei-Jian; Li, Jing; Shi, Cheng-Bin; Huo, Xiang-Dong

2015-12-01

The effect of boron and titanium addition on the hot ductility of Nb-containing steel was investigated using hot tensile tests. The fracture surface and the quenched longitudinal microstructure were examined by optical microscopy (OM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The results showed that both steel samples had the similar change from 1,100°C to 700°C. The hot ductility of Nb-containing steel with boron and titanium addition was higher than the steel without boron and titanium in the temperature range of 900-750°C. Because the formation of intergranular ferrite was inhibited by solute boron segregating on the grain boundary, the formation of TiN changed the distribution of Nb- and boron-containing precipitates and improved the amount of intragranular ferrite.

Turbostratic boron nitride coated on high-surface area metal oxide templates

DEFF Research Database (Denmark)

Klitgaard, Søren Kegnæs; Egeblad, Kresten; Brorson, M.

2007-01-01

Boron nitride coatings on high-surface area MgAl2O4 and Al2O3 have been synthesized and characterized by transmission electron microscopy and by X-ray powder diffraction. The metal oxide templates were coated with boron nitride using a simple nitridation in a flow of ammonia starting from ammonium...

Boron deprivation alters rat behaviour and brain mineral composition differently when fish oil instead of safflower oil is the diet fat source.

Science.gov (United States)

Nielsen, Forrest H; Penland, James G

2006-01-01

To determine whether boron deprivation affects rat behaviour and whether behavioural responses to boron deprivation are modified by differing amounts of dietary long-chain omega-3 fatty acids. Female rats were fed diets containing 0.1 mg (9 micromol)/kg boron in a factorial arrangement with dietary variables of supplemental boron at 0 and 3mg (278 micromol)/kg and fat sources of 75 g/kg safflower oil or 65 g/kg fish (menhaden) oil plus 10 g/kg linoleic acid. After 6 weeks, six females per treatment were bred. Dams and pups continued on their respective diets through gestation, lactation and after weaning. Between ages 6 and 20 weeks, behavioural tests were performed on 13-15 male offspring from three dams in each dietary treatment. The rats were euthanized at age 21 weeks for the collection of tissues and blood. At ages 6 and 19 weeks, auditory startle was evaluated with an acoustic startle system and avoidance behaviour was evaluated by using an elevated plus maze. At ages 7 and 20 weeks, spontaneous behaviour activity was evaluated with a photobeam activity system. A brightness discrimination test was performed on the rats between age 15 and 16 weeks. Brain mineral composition was determined by coupled argon plasma atomic emission spectroscopy. Plasma total glutathione was determined by HPLC and total cholesterol and 8-iso-prostaglandin F2alpha (8-iso-PGF2alpha) were determined by using commercially available kits. Boron-deficient rats were less active than boron-adequate rats when fed safflower oil based on reduced number, distance and time of horizontal movements, front entries, margin distance and vertical breaks and jumps in the spontaneous activity evaluation. Feeding fish oil instead of safflower oil attenuated the activity response to boron deprivation. In the plus maze evaluation, the behavioural reactivity of the boron-deficient rats fed fish oil was noticeably different than the other three treatments. They made more entries into both open and closed

The magnetism and spin-dependent electronic transport properties of boron nitride atomic chains

International Nuclear Information System (INIS)

An, Yipeng; Zhang, Mengjun; Wang, Tianxing; Jiao, Zhaoyong; Wu, Dapeng; Fu, Zhaoming; Wang, Kun

2016-01-01

Very recently, boron nitride atomic chains were successively prepared and observed in experiments [O. Cretu et al., ACS Nano 8, 11950 (2015)]. Herein, using a first-principles technique, we study the magnetism and spin-dependent electronic transport properties of three types of BN atomic chains whose magnetic moment is 1 μ B for B n N n−1 , 2 μ B for B n N n , and 3 μ B for B n N n+1 type atomic chains, respectively. The spin-dependent electronic transport results demonstrate that the short B n N n+1 chain presents an obvious spin-filtering effect with high spin polarization ratio (>90%) under low bias voltages. Yet, this spin-filtering effect does not occur for long B n N n+1 chains under high bias voltages and other types of BN atomic chains (B n N n−1 and B n N n ). The proposed short B n N n+1 chain is predicted to be an effective low-bias spin filters. Moreover, the length-conductance relationships of these BN atomic chains were also studied.

Photochemical reactions of electron-deficient olefins with N,N,N',N'-tetramethylbenzidine via photoinduced electron-transfer

Energy Technology Data Exchange (ETDEWEB)

Pan Yang [Laboratory of Bond-selective Chemistry, Department of Chemical Physics, University of Science and Technology of China, No. 96 of Jinzhai Road, Hefei, Anhui 230026 (China); Zhao Junshu [Laboratory of Bond-selective Chemistry, Department of Chemical Physics, University of Science and Technology of China, No. 96 of Jinzhai Road, Hefei, Anhui 230026 (China); Ji Yuanyuan [Laboratory of Bond-selective Chemistry, Department of Chemical Physics, University of Science and Technology of China, No. 96 of Jinzhai Road, Hefei, Anhui 230026 (China); Yan Lei [Laboratory of Bond-selective Chemistry, Department of Chemical Physics, University of Science and Technology of China, No. 96 of Jinzhai Road, Hefei, Anhui 230026 (China); Yu Shuqin [Laboratory of Bond-selective Chemistry, Department of Chemical Physics, University of Science and Technology of China, No. 96 of Jinzhai Road, Hefei, Anhui 230026 (China)], E-mail: sqyu@ustc.edu.cn

2006-01-05

Photoinduced electron transfer reactions of several electron-deficient olefins with N,N,N',N'-tetramethylbenzidine (TMB) in acetonitrile solution have been studied by using laser flash photolysis technique and steady-state fluorescence quenching method. Laser pulse excitation of TMB yields {sup 3}TMB* after rapid intersystem crossing from {sup 1}TMB*. The triplet which located at 480 nm is found to undergo fast quenching with the electron acceptors fumaronitrile (FN), dimethyl fumarate (DMF), diethyl fumarate (DEF), cinnamonitrile (CN), {alpha}-acetoxyacrylonitrile (AAN), crotononitrile (CrN) and 3-methoxyacrylonitrile (MAN). Substituents binding to olefin molecule own different electron-donating/withdrawing powers, which determine the electron-deficient property ({pi}-cloud density) of olefin molecule as well as control the electron transfer rate constant directly. The detection of ion radical intermediates in the photolysis reactions confirms the proposed electron transfer mechanism, as expected from thermodynamics. The quenching rate constants of triplet TMB by these olefins have been determined at 510 nm to avoid the disturbance of formed TMB cation radical around 475 nm. All the k{sub q}{sup T} values approach or reach to the diffusion-controlled limit. In addition, fluorescence quenching rate constants k{sub q}{sup S} have been also obtained by calculating with Stern-Volmer equation. A correlation between experimental electron transfer rate constants and free energy changes has been explained by Marcus theory of adiabatic outer-sphere electron transfer. Disharmonic k{sub q} values for CN and CrN in endergonic region may be the disturbance of exciplexs formation. e of exciplex formation.

The optical properties of boron carbide near boron K-edge inside periodical multilayers

Energy Technology Data Exchange (ETDEWEB)

Ksenzov, Dmitriy; Schlemper, Christoph; Pietsch, Ullrich [University of Siegen (Germany)

2010-07-01

Multilayer mirrors made for the use in the wavelength range near K-edge of boron (188 eV) are of great interest for X-ray fluorescence analysis of boron content in doped semiconductors, plasma diagnostics, astronomy and lithography. Moreover, multilayer mirrors composed by a metal and a low Z element like boron are used as optical elements in both the soft x-ray spectral range as well as at higher photon energies on 3rd generation synchrotron beamlines. Using an energy-resolved photon-in-photon-out method we reconstructed the optical data from energy dependence of both integrated peak intensity and FWHM of the 1st order ML Bragg peak measured at the UHV triple axis soft-x-ray reflectometer at BESSY II. The experiments clearly demonstrate that the peak shape of the ML Bragg peak is most sensitive to any kind of electronic excitation and recombination in solid. The soft-ray reflectivity can give detailed information for MLs with thickness up to several tens of nanometers. In addition, measurements close to a resonance edge probe the chemical state of the respective constituent accompanied with a high sensitivity of changes close to the sample surface.

Anode performance of boron-doped graphites prepared from shot and sponge cokes

Energy Technology Data Exchange (ETDEWEB)

Liu, Tao; Luo, Ruiying [School of Science, Beihang University, Beijing 100083 (China); Yoon, Seong-Ho; Mochida, Isao [Institute for Materials Chemistry and Engineering, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan)

2010-03-15

The structures and anode performances of graphitized pristine and boron-doped shot and sponge cokes have been comparatively studied by means of scanning electron microscope (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and galvanostatic measurement. The results show that high degree of graphitization can be obtained by the substituted boron atom in the carbon lattice, and boron in the resultant boron-doped graphites mainly exist in the form of boron carbide and boron substituted in the carbon lattice. Both of boron-doped graphites from shot and sponge cokes obtain discharge capacity of 350 mAh g{sup -1} and coulombic efficiency above 90%. Apart from commonly observed discharge plateau for graphite, boron-doped samples in this study also show a small plateau at ca. 0.06 V. This phenomenon can be explained that Li ion stores in the site to be void-like spaces that are produced by ''molecular bridging'' between the edge sites of graphene layer stack with a release of boron atoms substituted at the edge of graphene layer. The effect of the amount of boron dopant and graphitization temperature on the anode performance of boron-doped graphite are also investigated in this paper. (author)

Preparation of boron-rich aluminum boride nanoparticles by RF thermal plasma

Energy Technology Data Exchange (ETDEWEB)

Choi, Sooseok [Inha University, Department of Chemical Engineering and Regional Innovation Center for Environmental Technology of Thermal Plasma (Korea, Republic of); Matsuo, Jiro; Cheng, Yingying [Tokyo Institute of Technology, Department of Environmental Chemistry and Engineering (Japan); Watanabe, Takayuki, E-mail: watanabe@chemenv.titech.ac.jp [Kyushu University, Department of Chemical Engineering (Japan)

2013-08-15

Boron-rich compounds of AlB{sub 12} and AlB{sub 10} nanoparticles were synthesized by a radiofrequency thermal plasma. Aluminum and boron raw powders were evaporated in virtue of high enthalpy of the thermal plasma in upstream region, followed by the formation of aluminum boride nanoparticles in the tail region of plasma flame with rapid quenching. A high production rate of aluminum boride was confirmed by the X-ray diffraction measurement in the case of high input power, high boron content in raw material and helium inner gas. Polyhedral nanoparticles of 20.8 nm in mean size were observed by a transmission electron microscope. In the raw powder mixture of aluminum, titanium, and boron, titanium-boride nanoparticles were synthesized preferentially, because the Gibbs free energy for the boridation of titanium is lower than that of aluminum. Since the nucleation temperature of boron is higher than that of aluminum, the condensation of metal monomers onto boron nuclei results in the formation of boron-rich aluminum boride nanoparticles.

Boron affects the growth and ultrastructure of castor bean plants Boro afeta o crescimento e a ultra-estrutura da mamoneira

Directory of Open Access Journals (Sweden)

Denis Herisson da Silva

2008-12-01

Full Text Available The cultivation of oleaginous plants like the castor bean guarantees employment for agricultural families and can contribute in energy and chemical sectors, especially in the northeastern semi-arid regions of Brazil. Boron (B deficiency is a widespread nutritional disorder despite the fact that various anthropogenic sources with high B content may increase soil B to toxic levels for plants. The present study was designed to investigate the ultrastructural effects of boron deficiency and toxicity on castor bean plants which were grown under greenhouse condition using plastic containers with 10 L of nutrient solution. Boron treatments comprised: control (no B; 0.27 mg L-1, 5.40 mg L-1 B pots (one plant per pot, tested in a completely randomized design with three replicates. The dry matter of all plant parts and B concentration were determined. Cellular ultrastructure was evaluated by transmission and scanning electron microscopy on samples of leaves and petioles. Dry matter yield was affected by the B absence treatment but there was no difference for the 5.4 mg L-1 B (toxic conditions treatment. A marginal leaf burn at edge and tips of oldest leaves and absence of starch granules in chloroplasts were noted for the B toxicity treatment. The deformation of the youngest leaves, the death of the apical meristem as well as the swelling of the middle lamella, absence of starch granules in chloroplasts and petiole vessels untidily were observed in the B absent treatment. It is concluded that the production and development of castor bean plants is affected by boron deficiency, but not for boron toxicity conditions.A mamoneira é uma oleaginosa com grande potencial para a geração de renda na agricultura familiar e para produção de matéria prima para a indústria química e setor energético brasileiro, especialmente em regiões do semi-árido nordestino. A deficiência de boro (B ocorre de forma generalizada no Brasil e a aplicação excessiva deste

Characterization of boron doped nanocrystalline diamonds

International Nuclear Information System (INIS)

Peterlevitz, A C; Manne, G M; Sampaio, M A; Quispe, J C R; Pasquetto, M P; Iannini, R F; Ceragioli, H J; Baranauskas, V

2008-01-01

Nanostructured diamond doped with boron was prepared using a hot-filament assisted chemical vapour deposition system fed with an ethyl alcohol, hydrogen and argon mixture. The reduction of the diamond grains to the nanoscale was produced by secondary nucleation and defects induced by argon and boron atoms via surface reactions during chemical vapour deposition. Raman measurements show that the samples are nanodiamonds embedded in a matrix of graphite and disordered carbon grains, while morphological investigations using field electron scanning microscopy show that the size of the grains ranges from 20 to 100 nm. The lowest threshold fields achieved were in the 1.6 to 2.4 V/μm range

Effect of the complementary anions on the balance of calcium and boron in soil and plant

Energy Technology Data Exchange (ETDEWEB)

El-Damaty, A; El-Hamid, W A; El-Sherbeni, A E; El-Mowelhi,; Hossein, M A

1974-05-01

Different calcium salts and varying levels of boron were used in pot experiments with broad beans. High solubility Ca salts produced relatively lower soil pH than very low solubility Ca salts. Low solubility Ca salts slightly promote B retention as long as they increased soil pH. High Ca content in beans and high Ca/B ratios in soil are produced by very soluble Ca salts. B content of the plants depends on the amount of Ca absorbed and the B level in the soil, irrespective of any other factors studied. The presence of some Ca salts masked Boron toxicity symptoms. CO/sub 3/ anions in calcareous soils may play a role in boron deficiency or toxicity. Application of nitrogenous fertilizers may reduce injurious effect of excessive B content in soil, unlike phosphate fertilizers which may accentuate the boron toxicity problem. 14 references, 1 table.

On the Mechanism of Boron Ignition

Science.gov (United States)

Keil, D. G.; Dreizin, E. L.; Felder, W.; Vicenzi, E. P.

1997-01-01

Boron filaments were electrically heated in air and argon/oxygen mixtures while their resistance, temperature, and radiation at the wavelengths of BO and BO2 bands were monitored. The filaments 'burned' in two distinct stages. Samples of the filaments were quenched at different times before and during the burning and analyzed using electron microscopy. The beginning of the first stage combustion characterized by a local resistance minimum, a sharp spike in boron oxide radiation emission, and a rapid rise in temperature, occurred at 1500 +/- 70 deg. C, independent of pre-heating history and oxygen content (540%) in the gas environment. The data suggest that a phase transition occurs in the filaments at this temperature that triggers stage one combustion. Significant amounts of oxygen were found inside quenched filaments. Large spherical voids formed in the boron filaments during their second stage combustion which is interpreted to indicate a crucial role for the gas dissolution processes in the combustion scenario.

Density functional theory investigation of oxygen interaction with boron-doped graphite

Energy Technology Data Exchange (ETDEWEB)

Liu, Juan; Wang, Chen [State Key Lab of New Ceramic and Fine Processing, Institute of Nuclear and New Energy Technology, Tsinghua University, Beijing 100084 (China); Liang, Tongxiang, E-mail: txliang@tsinghua.edu.cn [State Key Lab of New Ceramic and Fine Processing, Institute of Nuclear and New Energy Technology, Tsinghua University, Beijing 100084 (China); Lai, Wensheng [Advanced Material Laboratory, School of Materials Science & Engineering, Tsinghua University, Beijing, 100084 (China)

2016-12-30

Highlights: • Density-functional approach is applied to study the interaction of oxygen with boron-doped graphite. • Adsorption and diffusion of oxygen atoms on boron doped graphite surfaces are studied. • Recombination of oxygen is investigated by ER and LH mechanisms. • Low boron concentration facilitates O{sub 2} formation while high boron loading inhibits the recombination. • The presence of B−B bonds due to boron accumulation makes it impossible for oxygen recombination. - Abstract: Boron inserted as impurity by substitution of carbon atoms in graphite is known to change (improve or deteriorate) oxidation resistance of nuclear graphite, but the reason for both catalytic and inhibiting oxidation is still uncertain. As a first step, this work is more specially devoted to the adsorption and diffusion of oxygen atoms on the surface and related to the problem of oxygen retention on the pure and boron-containing graphite surfaces. Adsorption energies and energy barriers associated to the diffusion for molecular oxygen recombination are calculated in the density functional theory framework. The existence of boron modifies the electronic structure of the surface, which results in an increase of the adsorption energy for O. However, low boron loading makes it easier for the recombination into molecular oxygen. For high boron concentration, it induces a better O retention capability in graphite because the presence of B-B bonds decreases recombination of the adsorbed oxygen atoms. A possible explanation for both catalytic and inhibiting effects of boron in graphite is proposed.

Mg-doping experiment and electrical transport measurement of boron nanobelts

International Nuclear Information System (INIS)

Kirihara, K.; Hyodo, H.; Fujihisa, H.; Wang, Z.; Kawaguchi, K.; Shimizu, Y.; Sasaki, T.; Koshizaki, N.; Soga, K.; Kimura, K.

2006-01-01

We measured electrical conductance of single crystalline boron nanobelts having α-tetragonal crystalline structure. The doping experiment of Mg was carried out by vapor diffusion method. The pure boron nanobelt is a p-type semiconductor and its electrical conductivity was estimated to be on the order of 10 -3 (Ω cm) -1 at room temperature. The carrier mobility of pure boron nanobelt was measured to be on the order of 10 -3 (cm 2 Vs -1 ) at room temperature and has an activation energy of ∼0.19 eV. The Mg-doped boron nanobelts have the same α-tetragonal crystalline structure as the pristine nanobelts. After Mg vapor diffusion, the nanobelts were still semiconductor, while the electrical conductance increased by a factor of 100-500. Transition to metal or superconductor by doping was not observed. - Graphical abstract: SEM micrographs of boron nanobelt after Ni/Au electrode fabrication by electron beam lithography. Display Omitted

Preparation of high-pressure phase boron nitride films by physical vapor deposition

CERN Document Server

Zhu, P W; Zhao, Y N; Li, D M; Liu, H W; Zou Guang Tian

2002-01-01

The high-pressure phases boron nitride films together with cubic, wurtzic, and explosive high-pressure phases, were successfully deposited on the metal alloy substrates by tuned substrate radio frequency magnetron sputtering. The percentage of cubic boron nitride phase in the film was about 50% as calculated by Fourier transform infrared measurements. Infrared peak position of cubic boron nitride at 1006.3 cm sup - sup 1 , which is close to the stressless state, indicates that the film has very low internal stress. Transition electron microscope micrograph shows that pure cubic boron nitride phase exits on the surface of the film. The growth mechanism of the BN films was also discussed.

Boron effects on creep rupture strength of W containing advanced ferritic creep resistant steels

Energy Technology Data Exchange (ETDEWEB)

Mito, N.; Hasegawa, Y. [Tohoku Univ., Sendai (Japan)

2010-07-01

The creep strength in ferritic creep resistant steels is increased by boron addition. However, the strengthening mechanisms have not yet been studied. This study clarifies the strengthening mechanism of 9% chromium steels with 10{proportional_to}100ppm boron and 0.5{proportional_to}2.0mass% tungsten in the laboratory. The strengthening effect of simultaneous addition of boron and tungsten was analyzed by hardenability, room-temperature strength and creep tests at 650 C. Changes in the microstructure as a result of the addition of boron and tungsten were also examined by optical microscope and transmission electron microscope (TEM). In addition, Alpha-ray Track Etching (ATE) method was used to detect the boron distribution and analyze the mechanisms change in the mechanical properties. Boron addition did not affect room-temperature strength, however, simultaneous addition of boron and tungsten increased room-temperature and high-temperature strength. According to ATE analysis, boron exists at the grain boundary. Therefore, synergistic effects of boron and tungsten on the creep strength suggest the tungsten precipitates stabilization by boron at the grain boundary. (orig.)

Electronic properties and relative stabilities of heterogeneous edge-decorated zigzag boron nitride nanoribbons

International Nuclear Information System (INIS)

Li, L.L.; Yu, X.F.; Yang, X.J.; Zhang, X.H.; Xu, X.W.; Jin, P.; Zhao, J.L.; Wang, X.X.; Tang, C.C.

2015-01-01

The wide band gap of boron nitride (BN) materials has been a major bottleneck for a wider application of BN in electronics. In this work, density functional theory computations were used to study the band structure of zigzag BN nanoribbons (BNNRs). Due to the ionic origin of the BN band gap, a heterogeneous edge decoration is an effective way to modulate the electronic band structure of BNNRs. This study demonstrates that a metallic behavior and magnetism can be realized by applying a NO 2 –NH 2 pair edge decoration. Although the lone electron pair of the NH 2 group is partly responsible for the metallic behavior, the effective potential difference induced by the donor–acceptor pair is also crucial for metallic behavior. Furthermore, these newly formed BNNRs were found to be more stable than H-passivated BNNRs. This simple chemical modification method offers great opportunities for the development of future BNNR-based electronic devices. - Graphical abstract: Due to the ionic origin of a BN band gap, heterogeneous edge decoration is an effective way to modulate its electronic structures. Metallicity and magnetism can be realized by NO 2 –NH 2 pair decoration. Although the N lone pair electrons in NH 2 group are responsible for the metallicity, the effective potential difference induced by a donor–acceptor pair is crucial for the formation of metallicity. - Highlights: • Heterogeneous edge decoration is effective for tuning BNNRs' electronic structures. • NO 2 –NH 2 pair decoration can lead to metallic behavior and magnetism for BNNRs. • The effective potential difference is crucial for the formation of metallicity. • NO 2 –NH 2 pair decorated BNNRs is more stable than H-passivated ones

Boron-enhanced diffusion of boron from ultralow-energy boron implantation

International Nuclear Information System (INIS)

Agarwal, A.; Eaglesham, D.J.; Gossmann, H.J.; Pelaz, L.; Herner, S.B.; Jacobson, D.C.

1998-01-01

The authors have investigated the diffusion enhancement mechanism of BED (boron enhanced diffusion), wherein the boron diffusivity is enhanced three to four times over the equilibrium diffusivity at 1,050 C in the proximity of a silicon layer containing a high boron concentration. It is shown that BED is associated with the formation of a fine-grain polycrystalline silicon boride phase within an initially amorphous Si layer having a high B concentration. For 0.5 keV B + , the threshold implantation dose which leads to BED lies between 3 x 10 14 and of 1 x 10 15 /cm -2 . Formation of the shallowest possible junctions by 0.5 keV B + requires that the implant dose be kept lower than this threshold

Study the gas sensing properties of boron nitride nanosheets

International Nuclear Information System (INIS)

Sajjad, Muhammad; Feng, Peter

2014-01-01

Graphical abstract: - Highlights: • We synthesized boron nitride nanosheets (BNNSs) on silicon substrate. • We analyzed gas sensing properties of BNNSs-based gas-sensor device. • CH 4 gas is used to measure gas-sensing properties of the device. • Quick response and recovery time of the device is recorded. • BNNSs showed excellent sensitivity to the working gas. - Abstract: In the present communication, we report on the synthesis of boron nitride nanosheets (BNNSs) and study of their gas sensing properties. BNNSs are synthesized by irradiating pyrolytic hexagonal boron nitride (h-BN) target using CO 2 laser pulses. High resolution transmission electron microscopic measurements (HRTEM) revealed 2-dientional honeycomb crystal lattice structure of BNNSs. HRTEM, electron diffraction, XRD and Raman scattering measurements clearly identified h-BN. Gas sensing properties of synthesized BNNSs were analyzed with prototype gas sensor using methane as working gas. A systematic response curve of the sensor is recorded in each cycle of gas “in” and “out”; suggesting excellent sensitivity and high performance of BNNSs-based gas-sensor

Two-dimensional numerical simulation of boron diffusion for pyramidally textured silicon

International Nuclear Information System (INIS)

Ma, Fa-Jun; Duttagupta, Shubham; Shetty, Kishan Devappa; Meng, Lei; Hoex, Bram; Peters, Ian Marius; Samudra, Ganesh S.

2014-01-01

Multidimensional numerical simulation of boron diffusion is of great relevance for the improvement of industrial n-type crystalline silicon wafer solar cells. However, surface passivation of boron diffused area is typically studied in one dimension on planar lifetime samples. This approach neglects the effects of the solar cell pyramidal texture on the boron doping process and resulting doping profile. In this work, we present a theoretical study using a two-dimensional surface morphology for pyramidally textured samples. The boron diffusivity and segregation coefficient between oxide and silicon in simulation are determined by reproducing measured one-dimensional boron depth profiles prepared using different boron diffusion recipes on planar samples. The established parameters are subsequently used to simulate the boron diffusion process on textured samples. The simulated junction depth is found to agree quantitatively well with electron beam induced current measurements. Finally, chemical passivation on planar and textured samples is compared in device simulation. Particularly, a two-dimensional approach is adopted for textured samples to evaluate chemical passivation. The intrinsic emitter saturation current density, which is only related to Auger and radiative recombination, is also simulated for both planar and textured samples. The differences between planar and textured samples are discussed

Adsorption of boron from boron-containing wastewaters by ion exchange in a continuous reactor

International Nuclear Information System (INIS)

Yilmaz, A. Erdem; Boncukcuoglu, Recep; Yilmaz, M. Tolga; Kocakerim, M. Muhtar

2005-01-01

In this study, boron removal from boron-containing wastewaters prepared synthetically was investigated. The experiments in which Amberlite IRA 743, boron specific resin was used were carried out in a column reactor. The bed volume of resin, boron concentration, flow rate and temperature were selected as experimental parameters. The experimental results showed that percent of boron removal increased with increasing amount of resin and with decreasing boron concentration in the solution. Boron removal decreased with increasing of flow rate and the effect of temperature on the percent of total boron removal increased the boron removal rate. As a result, it was seen that about 99% of boron in the wastewater could be removed at optimum conditions

Joining of boron carbide using nickel interlayer

International Nuclear Information System (INIS)

Vosughi, A.; Hadian, A. M.

2008-01-01

Carbide ceramics such as boron carbide due to their unique properties such as low density, high refractoriness, and high strength to weight ratio have many applications in different industries. This study focuses on direct bonding of boron carbide for high temperature applications using nickel interlayer. The process variables such as bonding time, temperature, and pressure have been investigated. The microstructure of the joint area was studied using electron scanning microscope technique. At all the bonding temperatures ranging from 1150 to 1300 d eg C a reaction layer formed across the ceramic/metal interface. The thickness of the reaction layer increased by increasing temperature. The strength of the bonded samples was measured using shear testing method. The highest strength value obtained was about 100 MPa and belonged to the samples bonded at 1250 for 75 min bonding time. The strength of the joints decreased by increasing the bonding temperature above 1250 d eg C . The results of this study showed that direct bonding technique along with nickel interlayer can be successfully utilized for bonding boron carbide ceramic to itself. This method may be used for bonding boron carbide to metals as well.

Defect complexes in carbon and boron nitride nanotubes

CSIR Research Space (South Africa)

Mashapa, MG

2012-05-01

Full Text Available The effect of defect complexes on the stability, structural and electronic properties of single-walled carbon nanotubes and boron nitride nanotubes is investigated using the ab initio pseudopotential density functional method implemented...

Boron reclamation

International Nuclear Information System (INIS)

Smith, R.M.

1980-07-01

A process to recover high purity 10 B enriched crystalline boron powder from a polymeric matrix was developed on a laboratory basis and ultimately scaled up to production capacity. The process is based on controlled pyrolysis of boron-filled scrap followed by an acid leach and dry sieving operation to return the powder to the required purity and particle size specifications. Typically, the recovery rate of the crystalline powder is in excess of 98.5 percent, and some of the remaining boron is recovered in the form of boric acid. The minimum purity requirement of the recovered product is 98.6 percent total boron

A Combination of Boron Nitride Nanotubes and Cellulose Nanofibers for the Preparation of a Nanocomposite with High Thermal Conductivity.

Science.gov (United States)

Zeng, Xiaoliang; Sun, Jiajia; Yao, Yimin; Sun, Rong; Xu, Jian-Bin; Wong, Ching-Ping

2017-05-23

With the current development of modern electronics toward miniaturization, high-degree integration and multifunctionalization, considerable heat is accumulated, which results in the thermal failure or even explosion of modern electronics. The thermal conductivity of materials has thus attracted much attention in modern electronics. Although polymer composites with enhanced thermal conductivity are expected to address this issue, achieving higher thermal conductivity (above 10 W m -1 K -1 ) at filler loadings below 50.0 wt % remains challenging. Here, we report a nanocomposite consisting of boron nitride nanotubes and cellulose nanofibers that exhibits high thermal conductivity (21.39 W m -1 K -1 ) at 25.0 wt % boron nitride nanotubes. Such high thermal conductivity is attributed to the high intrinsic thermal conductivity of boron nitride nanotubes and cellulose nanofibers, the one-dimensional structure of boron nitride nanotubes, and the reduced interfacial thermal resistance due to the strong interaction between the boron nitride nanotubes and cellulose nanofibers. Using the as-prepared nanocomposite as a flexible printed circuit board, we demonstrate its potential usefulness in electronic device-cooling applications. This thermally conductive nanocomposite has promising applications in thermal interface materials, printed circuit boards or organic substrates in electronics and could supplement conventional polymer-based materials.

Real-time boronization in PBX-M using erosion of solid boronized targets

International Nuclear Information System (INIS)

Kugel, H.W.; Timberlake, J.; Bell, R.; LeBlanc, B.; Okabayashi, M.; Paul, S.; Tighe, W.; Hirooka, Y.

1994-11-01

Thirty one real-time boronizations were applied to PBX-M using the plasma erosion of solid target probes. More than 17 g of boron were deposited in PBX-M using this technique. The probes were positioned at the edge plasma to optimize vaporization and minimize spallation. Auger depth profile analysis of poloidal and toroidal deposition sample coupon arrays indicate that boron was transported by the plasma around the torus and deep into the divertors. During discharges with continuous real-time boronization, low-Z and high-Z impurities decreased rapidly as plasma surfaces were covered during the first 20-30 discharges. After boronization, a short-term improvement in plasma conditions persisted prior to significant boron erosion from plasma surfaces, and a longer term, but less significant improvement persisted as boron farther from the edge continued gettering. Real-time solid target boronization has been found to be very effective for accelerating conditioning to new regimes and maintaining high performance plasma conditions

Two-dimensional boron: Lightest catalyst for hydrogen and oxygen evolution reaction

Energy Technology Data Exchange (ETDEWEB)

Mir, Showkat H. [Centre for Nano Science, Central University of Gujarat, Gandhinagar 382030 (India); Chakraborty, Sudip, E-mail: sudiphys@gmail.com, E-mail: prakash.jha@cug.ac.in; Wärnå, John [Condensed Matter Theory Group, Department of Physics and Astronomy, Uppsala University, Uppsala 75120 (Sweden); Jha, Prakash C., E-mail: sudiphys@gmail.com, E-mail: prakash.jha@cug.ac.in [School of Applied Material Sciences, Central University of Gujarat, Gandhinagar 382030 (India); Soni, Himadri [Lehrstuhl für Theoretische Chemie, Friedrich-Alexander Universität Erlangen-Nürnberg, Egerlandstraße 3, 91058 Erlangen (Germany); Jha, Prafulla K. [Department of Physics, Faculty of Science, The Maharaja Sayajirao University of Baroda, Vadodara 390 002 (India); Ahuja, Rajeev [Condensed Matter Theory Group, Department of Physics and Astronomy, Uppsala University, Uppsala 75120 (Sweden); Department of Materials and Engineering, Royal Institute of Technology (KTH), 10044 Stockholm (Sweden)

2016-08-01

The hydrogen evolution reaction (HER) and the oxygen evolution reaction (OER) have been envisaged on a two-dimensional (2D) boron sheet through electronic structure calculations based on a density functional theory framework. To date, boron sheets are the lightest 2D material and, therefore, exploring the catalytic activity of such a monolayer system would be quite intuitive both from fundamental and application perspectives. We have functionalized the boron sheet (BS) with different elemental dopants like carbon, nitrogen, phosphorous, sulphur, and lithium and determined the adsorption energy for each case while hydrogen and oxygen are on top of the doping site of the boron sheet. The free energy calculated from the individual adsorption energy for each functionalized BS subsequently guides us to predict which case of functionalization serves better for the HER or the OER.

Inter-layer potential for hexagonal boron nitride

Science.gov (United States)

Leven, Itai; Azuri, Ido; Kronik, Leeor; Hod, Oded

2014-03-01

A new interlayer force-field for layered hexagonal boron nitride (h-BN) based structures is presented. The force-field contains three terms representing the interlayer attraction due to dispersive interactions, repulsion due to anisotropic overlaps of electron clouds, and monopolar electrostatic interactions. With appropriate parameterization, the potential is able to simultaneously capture well the binding and lateral sliding energies of planar h-BN based dimer systems as well as the interlayer telescoping and rotation of double walled boron-nitride nanotubes of different crystallographic orientations. The new potential thus allows for the accurate and efficient modeling and simulation of large-scale h-BN based layered structures.

Inter-layer potential for hexagonal boron nitride

Energy Technology Data Exchange (ETDEWEB)

Leven, Itai; Hod, Oded, E-mail: odedhod@tau.ac.il [Department of Chemical Physics, School of Chemistry, The Raymond and Beverly Sackler Faculty of Exact Sciences, Tel-Aviv University, Tel-Aviv 69978 (Israel); Azuri, Ido; Kronik, Leeor [Department of Materials and Interfaces, Weizmann Institute of Science, Rehovoth 76100 (Israel)

2014-03-14

A new interlayer force-field for layered hexagonal boron nitride (h-BN) based structures is presented. The force-field contains three terms representing the interlayer attraction due to dispersive interactions, repulsion due to anisotropic overlaps of electron clouds, and monopolar electrostatic interactions. With appropriate parameterization, the potential is able to simultaneously capture well the binding and lateral sliding energies of planar h-BN based dimer systems as well as the interlayer telescoping and rotation of double walled boron-nitride nanotubes of different crystallographic orientations. The new potential thus allows for the accurate and efficient modeling and simulation of large-scale h-BN based layered structures.

Inter-layer potential for hexagonal boron nitride

International Nuclear Information System (INIS)

Leven, Itai; Hod, Oded; Azuri, Ido; Kronik, Leeor

2014-01-01

A new interlayer force-field for layered hexagonal boron nitride (h-BN) based structures is presented. The force-field contains three terms representing the interlayer attraction due to dispersive interactions, repulsion due to anisotropic overlaps of electron clouds, and monopolar electrostatic interactions. With appropriate parameterization, the potential is able to simultaneously capture well the binding and lateral sliding energies of planar h-BN based dimer systems as well as the interlayer telescoping and rotation of double walled boron-nitride nanotubes of different crystallographic orientations. The new potential thus allows for the accurate and efficient modeling and simulation of large-scale h-BN based layered structures

Ceramic silicon-boron-carbon fibers from organic silicon-boron-polymers

Science.gov (United States)

Riccitiello, Salvatore R. (Inventor); Hsu, Ming-Ta S. (Inventor); Chen, Timothy S. (Inventor)

1993-01-01

Novel high strength ceramic fibers derived from boron, silicon, and carbon organic precursor polymers are discussed. The ceramic fibers are thermally stable up to and beyond 1200 C in air. The method of preparation of the boron-silicon-carbon fibers from a low oxygen content organosilicon boron precursor polymer of the general formula Si(R2)BR(sup 1) includes melt-spinning, crosslinking, and pyrolysis. Specifically, the crosslinked (or cured) precursor organic polymer fibers do not melt or deform during pyrolysis to form the silicon-boron-carbon ceramic fiber. These novel silicon-boron-carbon ceramic fibers are useful in high temperature applications because they retain tensile and other properties up to 1200 C, from 1200 to 1300 C, and in some cases higher than 1300 C.

Investigation into boron reaction with titanium at extreme temperature gradients

International Nuclear Information System (INIS)

Korchagin, M.A.; Gusenko, S.N.; Aleksandrov, V.V.; Neronov, V.A.

1981-01-01

The mechanism of self-propagation high-temperature synthesis of titanium boride is studied using the translucent electron microscopy. Titanium interaction with boron film (approximately 1000 A thick) starts with the metal partial melting. A twozone layer of the reaction products, separating the reagents, is formed. In the zone adjacent to B, Ti 3 B 4 and fusible liquid phases are present. The second zone consists of TiB. The subsequent interaction is realized by Means of the dissolving and absorption by titanium of the layer of products during its continuous increase in boron. TiB 2 formation takes place at subsequent stages of interaction inside Ti liquid particles during their saturation by boron from the products absorbed [ru

Plasmonic Properties of Silicon Nanocrystals Doped with Boron and Phosphorus.

Science.gov (United States)

Kramer, Nicolaas J; Schramke, Katelyn S; Kortshagen, Uwe R

2015-08-12

Degenerately doped silicon nanocrystals are appealing plasmonic materials due to silicon's low cost and low toxicity. While surface plasmonic resonances of boron-doped and phosphorus-doped silicon nanocrystals were recently observed, there currently is poor understanding of the effect of surface conditions on their plasmonic behavior. Here, we demonstrate that phosphorus-doped silicon nanocrystals exhibit a plasmon resonance immediately after their synthesis but may lose their plasmonic response with oxidation. In contrast, boron-doped nanocrystals initially do not exhibit plasmonic response but become plasmonically active through postsynthesis oxidation or annealing. We interpret these results in terms of substitutional doping being the dominant doping mechanism for phosphorus-doped silicon nanocrystals, with oxidation-induced defects trapping free electrons. The behavior of boron-doped silicon nanocrystals is more consistent with a strong contribution of surface doping. Importantly, boron-doped silicon nanocrystals exhibit air-stable plasmonic behavior over periods of more than a year.

Monte Carlo simulation of boron-ion implantation into single-crystal silicon

International Nuclear Information System (INIS)

Klein, K.M.

1991-01-01

A physically based Monte Carlo boron implantation model developed comprehends previously neglected but important implant parameters such as native oxide layers, wafer temperature, beam divergence, tilt angle, rotation (twist) angle, and dose, in addition to energy. This model uses as its foundation the MARLOWE Monte Carlo simulation code developed at Oak Ridge National Laboratory for the analysis of radiation effects in materials. This code was carefully adapted for the simulation of ion implantation, and a number of significant improvements have been made, including the addition of atomic pair specific interatomic potentials, the implementation of a newly developed local electron concentration dependent electronic stopping model, and the implementation of a newly developed cumulative damage model. This improved version of the code, known as UT-MARLOWE, allows boron implantation profiles to be accurately predicted as a function of energy, tilt angle, rotation angle, and dose. This code has also been used in the development and implementation of an accurate and efficient two-dimensional boron implantation model

Electrical Characterization of Irradiated Semiconducting Amorphous Hydrogenated Boron Carbide

Science.gov (United States)

Peterson, George Glenn

Semiconducting amorphous partially dehydrogenated boron carbide has been explored as a neutron voltaic for operation in radiation harsh environments, such as on deep space satellites/probes. A neutron voltaic device could also be used as a solid state neutron radiation detector to provide immediate alerts for radiation workers/students, as opposed to the passive dosimetry badges utilized today. Understanding how the irradiation environment effects the electrical properties of semiconducting amorphous partially dehydrogenated boron carbide is important to predicting the stability of these devices in operation. p-n heterojunction diodes were formed from the synthesis of semiconducting amorphous partially dehydrogenated boron carbide on silicon substrates through the use of plasma enhanced chemical vapor deposition (PECVD). Many forms of structural and electrical measurements and analysis have been performed on the p-n heterojunction devices as a function of both He+ ion and neutron irradiation including: transmission electron microscopy (TEM), selected area electron diffraction (SAED), current versus voltage I(V), capacitance versus voltage C(V), conductance versus frequency G(f), and charge carrier lifetime (tau). In stark contrast to nearly all other electronic devices, the electrical performance of these p-n heterojunction diodes improved with irradiation. This is most likely the result of bond defect passivation and resolution of degraded icosahedral based carborane structures (icosahedral molecules missing a B, C, or H atom(s)).

Gap state related blue light emitting boron-carbon core shell structures

International Nuclear Information System (INIS)

Singh, Paviter; Kaur, Manpreet; Singh, Bikramjeet; Kaur, Gurpreet; Singh, Kulwinder; Kumar, Akshay; Kumar, Manjeet; Bala, Rajni; Thakur, Anup

2016-01-01

Boron-carbon core shell structures have been synthesized by solvo-thermal synthesis route. The synthesized material is highly pure. X-ray diffraction analysis confirms the reduction of reactants in to boron and carbon. Scanning Electron Microscopy (SEM) analysis showed that the shell is uniform with average thickness of 340 nm. Photo luminescence studies showed that the material is blue light emitting with CIE color coordinates: x=0.16085, y=0.07554.

B4C solid target boronization of the MST reversed-field pinch

International Nuclear Information System (INIS)

Den Hartog, D.J.; Cekic, M.; Fiksel, G.; Hokin, S.A.; Kendrick, R.D.; Prager, S.C.; Stoneking, M.R.

1992-10-01

A solid rod of hot-pressed boron carbide is being used as the source of boron during boronization of MST. The most striking result of this procedure is the reduction in oxygen contamination of the plasma (O III radiation, characteristic of oxygen at the edge, falls by about a factor of 3 after boronization.). The radiated power fraction drops to about half its initial value. Particle reflux from the wall is also lowered, making density control simpler. The rod (12.7 mm diameter) is inserted into the edge plasma of normal high-power RFP discharges. B 4 C is ablated from the surface of the rod and deposited in a thin film (a-B/C:H) on the walls and limiters. The energy flux carried by ''superthermal'' (not ''runaway'') electrons at the edge of MST appears to enhance the efficient, non-destructive ablation of the boron carbide rod

Axial channeling of boron ions into silicon

International Nuclear Information System (INIS)

La Ferla, A.; Galvagno, G.; Raineri, V.; Setola, R.; Rimini, E.; Carnera, A.; Gasparotto, A.

1992-01-01

Channeling boron implants were performed into (100) and (110) silicon substrates in the energy range 80-700 keV. The dose ranged between 3.5x10 11 and 1x10 15 atoms/cm 2 . The axial channeling concentration profiles of implanted B + were compared with that obtained for incidence along the random direction of the crystal and with that obtained by implantation in amorphous silicon. The electrical and chemical boron distributions were obtained by spreading resistance and secondary ion mass spectrometry measurements, respectively. The inelastic stopping power, S c , was extracted from the experimental maximum ranges for the [100] and [110] axis. The energy dependence of the electronic stopping power is given by S e = KE p with p [100] = 0.469±0.010 and p [110] = 0.554±0.004. Simulations obtained by the MARLOWE code, using the Oen-Robinson impact parameter dependent formula, for the electronic energy loss reproduce quite well the experimental depth profiles. (orig.)

Aspects of the chemistry of boron

International Nuclear Information System (INIS)

Moellinger, H.

1976-01-01

Crystal phases of elementary boron are reviewed as well as boron-sulphur, boron-selenum, boron-tellurium, and boron-nitrogen compounds, carboranes, and boron-carbohydrate complexes. A boron cadastre of rivers and lakes serves to illustrate the role of boron in environmental protection. Technically relevant boron compounds and their uses are mentioned. (orig.) 891 HK/orig. 892 MB [de

Interaction of iron with boron in metal-rich metallaboranes resulting in large deshielding and rapid relaxation processes of the boron-11 nucleus

International Nuclear Information System (INIS)

Rath, N.P.; Fehlner, T.P.

1988-01-01

A first-order, parameterized model for calculating 11 B chemical shifts in metal-rich ferraboranes and a correlation of chemical shift with boron Mulliken populations from Fenske-Hall calculations are presented. These correlations are qualitatively different from those reported earlier for boranes and suggest that direct iron-boron interactions lead to large deshielding due to substantial increases in multiple-bond contributions to the shielding tensor. Relaxation rates have been measured for [Fe 4 (CO) 12 BH/sub 3-n/]/sup n-/ (n = 0-2) and correlated with electric field gradients at the boron nucleus estimated from Fenske-Hall calculations. These results demonstrate that formation of the boride, [Fe 4 (CO) 12 B] 3- , by deprotonation is accompanied by the development of large asymmetries in the electronic charge distribution around the boron nucleus. Finally, 7 Li NMR is used to probe the nature of the anions [Fe 4 (CO) 12 BH/sub 3-n/]/sup n-/ (n = 1-3), and observed line shapes suggest close association of Li + with the trianion. 28 references, 3 figures, 4 tables

Guided basin-hopping search of small boron clusters with density functional theory

Energy Technology Data Exchange (ETDEWEB)

Ng, Wei Chun; Yoon, Tiem Leong [School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia); Lim, Thong Leng [Faculty of Engineering and Technology, Multimedia University, Melacca Campus, 75450 Melaka (Malaysia)

2015-04-24

The search for the ground state structures of Boron clusters has been a difficult computational task due to the unique metalloid nature of Boron atom. Previous research works had overcome the problem in the search of the Boron ground-state structures by adding symmetry constraints prior to the process of locating the local minima in the potential energy surface (PES) of the Boron clusters. In this work, we shown that, with the deployment of a novel computational approach that incorporates density functional theory (DFT) into a guided global optimization search algorithm based on basin-hopping, it is possible to directly locate the local minima of small Boron clusters in the PES at the DFT level. The ground-state structures search algorithm as proposed in this work is initiated randomly and needs not a priori symmetry constraint artificially imposed throughout the search process. Small sized Boron clusters so obtained compare well to the results obtained by similar calculations in the literature. The electronic properties of each structures obtained are calculated within the DFT framework.

Guided basin-hopping search of small boron clusters with density functional theory

International Nuclear Information System (INIS)

Ng, Wei Chun; Yoon, Tiem Leong; Lim, Thong Leng

2015-01-01

The search for the ground state structures of Boron clusters has been a difficult computational task due to the unique metalloid nature of Boron atom. Previous research works had overcome the problem in the search of the Boron ground-state structures by adding symmetry constraints prior to the process of locating the local minima in the potential energy surface (PES) of the Boron clusters. In this work, we shown that, with the deployment of a novel computational approach that incorporates density functional theory (DFT) into a guided global optimization search algorithm based on basin-hopping, it is possible to directly locate the local minima of small Boron clusters in the PES at the DFT level. The ground-state structures search algorithm as proposed in this work is initiated randomly and needs not a priori symmetry constraint artificially imposed throughout the search process. Small sized Boron clusters so obtained compare well to the results obtained by similar calculations in the literature. The electronic properties of each structures obtained are calculated within the DFT framework

Chocolate das bagas e clorose foliar: anomalia da videira causada por deficiência de boro Internal browning ("chocolate" and leaf chlorosis of the 'pink Niagara' grafe, a boron deficiency anomaly

Directory of Open Access Journals (Sweden)

Hugo Kuniyuki

1985-01-01

Full Text Available A anomalia do cultivar de videira Niagara Rosada, caracterizada por sintomas de clorose nas folhas, chocolate das bagas e cachos malformados, não é de natureza virótica, de acordo com resultados de testes de transmissão e de perpetuação. Essa anomalia, presente em áreas definidas de alguns vinhedos de Indaiatuba e Jundiaí (SP, está associada à deficiência nutricional de boro. O teor médio de boro em amostras de plantas afetadas de 'Niagara Rosada' (18 ppm no limbo e 7 ppm nos frutos foi menor do que nas de plantas normais (24 ppm no limbo e 10 ppm nos frutos das mesmas plantaçoes; um material coletado de um vinhedo bastante afetado mostrou 13 e 1 ppm respectivamente no limbo e nos frutos de plantas deficientes contra 20 e 6 ppm nos de plantas sem sintomas. Amostras de três vinhedos vizinhos sem essa anomalia apresentaram um teor médio de 35 ppm no limbo. As do porta-enxerto 'Traviú' com clorose e sem clorose mostraram 16 ppm e 43 ppm de boro respectivamente. A aplicação de bórax, nas doses de 5, 10 e 20g por planta, 1ogo após a poda de inverno, ou pulverização de ácido bórico nas concentraçoes de 0,3% e 0,6% sobre a folhagem, durante o início do florescimento e durante a fase de uva chumbinho, permitiram controlar a anomalia nas condições de campo. Foi notada resposta favorável por um ciclo vegetativo, pelo menos, indicando controle por efeito residual de uma aplicação.The 'pink Niagara' grape (V. labrusca L. x V. vinifera L. anomaly characterized by leaf chlorosis and "chocolate" (internal browning of the young fruit, at first thought to be a virus disease, has been found to be a result of boron deficiency. The anomaly was first recorded in 1974. It occurs in patches in vineyards of Indaiatuba and Jundiaí, two grape-growing counties of the State of São Paulo, Brazil. Affected plants show yellowing between the primary and secondary veins of the upper leaves and malformed clusters, with normal-sized berries and

The determination of boron and carbon in reactor grade boron carbide

International Nuclear Information System (INIS)

Crossley, D.; Wood, A.J.; McInnes, C.A.J.; Jones, I.G.

1978-09-01

The sealed tube method of dissolution at high temperature and pressure has been successfully applied in the analysis of reactor grade boron carbide for the determination of boron. A 50 mg sample of boron carbide is completely dissolved by heating with concentrated nitric acid in a sealed tube at 300 0 C. The boron content of the resultant sample solution is determined by the mannitol potentiometric titration method. The precision of the method for the determination of 2.5 mg of boron using the Harwell automatic potentiometric titrator is 0.2% (coefficient of variation). The carbon content of a boron carbide sample is determined by combustion of the sample at 1050 0 C in a stream of oxygen using vanadium pentoxide to ensure the complete oxidation of the sample. The carbon dioxide produced from the sample is measured manometrically and the precision of the method for the determination of 4 mg of carbon is 0.4% (coefficient of variation). (author)

Ionic conductivity in BC3 type boron carbon nanolayers

Directory of Open Access Journals (Sweden)

Irina V. Zaporotskova

2017-06-01

Full Text Available Studies of ionic conductivity and structuresf in which it can be achieved are of great importance for the development of modern batteries. The use of new materials will allow avoiding such typical disadvantages of batteries as short service life, low capacity and leaks. In this article we present the results of our study of the ionic conductivity in boron carbon nanolayers. We have simulated three types of boron carbon nanolayers containing different amounts of boron. The studies have been carried out using the MNDO method within the framework of the molecular cluster model and the DFT method with the B3LYP functional and the 6–31G basis. To study the ion conduction process we have simulated vacancy formation for each type of the nanolayers and studied the energy and electronic characteristics of these processes. We show that 25% boron substitution is the most energetically favorable for vacancy formation. We have also simulated vacancy migration and determined the thermal conductivity as a function of temperature.

Boron incorporation into rutile: phase equilibria and structural considerations

Energy Technology Data Exchange (ETDEWEB)

Grey, I.E.; Li, C.; MacRae, C.M. [Commonwealth Scientific and Industrial Research Organisation (CSIRO), East Melbourne, VIC (Australia). Div of Minerals; Bursill, L.A. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1997-06-01

Reduction of rutile in the presence of borate flux stabilised the rutile phase relative to reduced rutiles due to incorporation of boron from the flux. In the presence of borates the rutile phase is stabilised to oxygen fugacities that are lower by almost two orders of magnitude compared with fugacities at the limit of the single-phase rutile phase field in the pure Ti-O system. Boron incorporation is accompanied by reduction of titanium to the trivalent state, according to the charge compensation relation: 3Ti{sup 4+}{identical_to} 3 Ti{sup 3+} + B{sup 3+}. Results of powder X-ray diffraction and transmission electron microscopy studies on samples prepared in the temperature range 1100 to 1300 deg C have been used to establish a model for boron incorporation. It is proposed that at the temperatures studied, local defects in boron doped rutile result from displacement of titanium atoms to adjacent interstitial sites coupled with occupation by boron of the triangular face of the vacated octahedral sites. This atomic grouping represents a small element of the TiBO{sub 3} (calcite-type) structure. Annealing at a lower temperature results in ordering of the local defects to form (101){sub r} planar intergrowths of rutile and calcite-type structures. 14 refs., 3 tabs., 8 figs.

Boron incorporation into rutile: phase equilibria and structural considerations

International Nuclear Information System (INIS)

Grey, I.E.; Li, C.; MacRae, C.M.; Bursill, L.A.

1997-01-01

Reduction of rutile in the presence of borate flux stabilised the rutile phase relative to reduced rutiles due to incorporation of boron from the flux. In the presence of borates the rutile phase is stabilised to oxygen fugacities that are lower by almost two orders of magnitude compared with fugacities at the limit of the single-phase rutile phase field in the pure Ti-O system. Boron incorporation is accompanied by reduction of titanium to the trivalent state, according to the charge compensation relation: 3Ti 4+ ≡ 3 Ti 3+ + B 3+ . Results of powder X-ray diffraction and transmission electron microscopy studies on samples prepared in the temperature range 1100 to 1300 deg C have been used to establish a model for boron incorporation. It is proposed that at the temperatures studied, local defects in boron doped rutile result from displacement of titanium atoms to adjacent interstitial sites coupled with occupation by boron of the triangular face of the vacated octahedral sites. This atomic grouping represents a small element of the TiBO 3 (calcite-type) structure. Annealing at a lower temperature results in ordering of the local defects to form (101) r planar intergrowths of rutile and calcite-type structures. 14 refs., 3 tabs., 8 figs

Study and optimization of the carbothermic reduction process for obtaining boron carbide

International Nuclear Information System (INIS)

Castro, A.R.M. de.

1989-01-01

Boron carbide - B sub(4)C - is a ceramic material of technological importance due to its hardness and high chemical and thermal stabilities. Moreover, its high neutron capture cross section makes it suitable for application as neutron absorber in nuclear technology. The process for obtaining carbothermally derived boron carbide has been studied in two steps: firstly, the parameters of the boric acid → boron oxide dehydration reaction have been defined; secondly, the optimization of the carbothermal reduction reaction using boron oxide has been undertaken looking for boron carbide having low level of free carbon. The starting materials as well as the main products have been studied by chemical and spectrographic analyses, X-ray diffractometry, granulometric classification and scanning electron microscopy. The optimization of the carbothermic reduction process allowed for the development and set up of a fabrication procedure yielding high quality B sub(4) C powders, starting from low cost and easily available (in the Brazilian market) raw materials. (author)

Effect of Hypoeutectic Boron Additions on the Grain Size and Mechanical Properties of Ti-6Al-4V Manufactured with Powder Bed Electron Beam Additive Manufacturing

Science.gov (United States)

Mahbooba, Zaynab; West, Harvey; Harrysson, Ola; Wojcieszynski, Andrzej; Dehoff, Ryan; Nandwana, Peeyush; Horn, Timothy

2017-03-01

In additive manufacturing, microstructural control is feasible via processing parameter alteration. However, the window for parameter variation for certain materials, such as Ti-6Al-4V, is limited, and alternative methods must be employed to customize microstructures. Grain refinement and homogenization in cast titanium alloys has been demonstrated through the addition of hypoeutectic concentrations of boron. This work explores the influence of 0.00 wt.%, 0.25 wt.%, 0.50 wt.%, and 1.0 wt.% boron additions on the microstructure and bulk mechanical properties of Ti-6Al-4V samples fabricated in an Arcam A2 electron beam melting (EBM) system with commercial processing parameters for Ti-6Al-4V. Analyses of EBM fabricated Ti-6Al-4V + B indicate that the addition of 0.25-1.0 wt.% boron progressively refines the grain structure, and it improves hardness and elastic modulus. Despite a reduction in size, the β grain structure remained columnar as a result of directional heat transfer during EBM fabrication.

Boron carbide nanostructures: A prospective material as an additive in concrete

Science.gov (United States)

Singh, Paviter; Kaur, Gurpreet; Kumar, Rohit; Kumar, Umesh; Singh, Kulwinder; Kumar, Manjeet; Bala, Rajni; Meena, Ramovatar; Kumar, Akshay

2018-05-01

In recent decades, manufacture and ingestion of concrete have increased particularly in developing countries. Due to its low cost, safety and strength, concrete have become an economical choice for protection of radiation shielding material in nuclear reactors. As boron carbide has been known as a neutron absorber material makes it a great candidate as an additive in concrete for shielding radiation. This paper presents the synthesis of boron carbide nanostructures by using ball milling method. The X-ray diffraction pattern, Fourier Transform Infrared Spectroscopy (FTIR) and Scanning Electron Microscope analysis confirms the formation of boron carbide nanostructures. The effect of boron carbide nanostructures on the strength of concrete samples was demonstrated. The compressive strength tests of concrete cube B4C powder additives for 0 % and 5 % of total weight of cement was compared for different curing time period such as 7, 14, 21 and 28 days. The high compressive strength was observed when 5 wt % boron carbide nanostructures were used as an additive in concrete samples after 28 days curing time and showed significant improvement in strength.

A technique to prepare boronated B72.3 monoclonal antibody for boron neutron capture therapy

International Nuclear Information System (INIS)

Ranadive, G.N.; Rosenzweig, H.S.; Epperly, M.W.

1993-01-01

B72.3 monoclonal antibody has been successfully boronated using mercaptoundecahydro-closo-dodecaborate (boron cage compound). The reagent was incorporated by first reacting the lysine residues of the antibody with m-maleimidobenzoyl succinimide ester (MBS), followed by Michael addition to the maleimido group by the mercapto boron cage compound to form a physiologically stable thioether linkage. Boron content of the antibody was determined by atomic absorption spectroscopy. For biodistribution studies, boronated antibody was radioiodinated with iodogen. 125 I-labeled and boronated B72.3 monoclonal antibody demonstrated clear tumor localization when administered via tail vein injections to athymic nude mice bearing LS174-T tumor xenografts. Boronated antibody was calculated to deliver 10 6 boron atoms per tumor cell. Although this falls short of the specific boron content originally proposed as necessary for boron neutron capture therapy (BNCT), recent calculations suggest that far fewer atoms of 10 B per tumor cell would be necessary to effect successful BNCT when the boron is targeted to the tumor cell membrane. (author)

Implantation of boron in silicon

International Nuclear Information System (INIS)

Hofker, W.K.

1975-01-01

The distribution versus depth of boron implanted in silicon and the corresponding electrical activity obtained after annealing are studied. The boron distributions are measured by secondary-ion mass spectrometry. Boron distributions implanted at energies in the range from 30 keV to 800 keV in amorphous and polycrystalline silicon are analysed. Moments of these distributions are determined by a curve-fitting programme and compared with moments calculated by Winterbon. Boron distributions obtained by implantations along a dense crystallographic direction in monocrystalline silicon are found to have penetrating tails. After investigation of some possible mechanisms of tail formation it is concluded that the tails are due to channelling. It was found that the behaviour of boron during annealing is determined by the properties of three boron fractions consisting of precipitated boron, interstitial boron and substitutional boron. The electrical activity of the boron versus depth is found to be consistent with the three boron fractions. A peculiar redistribution of boron is found which is induced by the implantation of a high dose of heavy ions and subsequent annealing. Different mechanisms which may cause the observed effects, such as thermal diffusion which is influenced by lattice strain and damage, are discussed. (Auth.)

Effect of boron incorporation on the structure and electrical properties of diamond-like carbon films deposited by femtosecond and nanosecond pulsed laser ablation

Energy Technology Data Exchange (ETDEWEB)

Sikora, A. [Laboratoire Hubert Curien, UMR 5516 CNRS, Universite Jean Monnet, 18 Rue Pr. Benoit Lauras, 42000 Saint-Etienne (France); Bourgeois, O. [Institut Neel, UPR 2940 CNRS, 25 Avenue des Martyrs, 38042 Grenoble Cedex 9 (France); Sanchez-Lopez, J.C. [Instituto de Ciencia de Materiales de Sevilla, Avda. Americo Vespucio, 49 41092 Sevilla (Spain); Rouzaud, J.-N. [Laboratoire de Geologie, UMR 8538 CNRS, Ecole Normale Superieure, 45 Rue d' Ulm, 75230 Paris Cedex 05 (France); Rojas, T.C. [Instituto de Ciencia de Materiales de Sevilla, Avda. Americo Vespucio, 49 41092 Sevilla (Spain); Loir, A.-S. [Laboratoire Hubert Curien, UMR 5516 CNRS, Universite Jean Monnet, 18 Rue Pr. Benoit Lauras, 42000 Saint-Etienne (France); Garden, J.-L. [Institut Neel, UPR 2940 CNRS, 25 Avenue des Martyrs, 38042 Grenoble Cedex 9 (France); Garrelie, F. [Laboratoire Hubert Curien, UMR 5516 CNRS, Universite Jean Monnet, 18 Rue Pr. Benoit Lauras, 42000 Saint-Etienne (France); Donnet, C., E-mail: christophe.donnet@univ-st-etienne.f [Laboratoire Hubert Curien, UMR 5516 CNRS, Universite Jean Monnet, 18 Rue Pr. Benoit Lauras, 42000 Saint-Etienne (France)

2009-12-31

The influence of the incorporation of boron in diamond-like carbon (DLC) films on the microstructure of the coatings has been investigated. The boron-containing DLC films (a-C:B) have been deposited by pulsed laser deposition (PLD) at room temperature in high vacuum conditions, by ablating graphite and boron targets either with a femtosecond pulsed laser (800 nm, 150 fs, fs-DLC) or with a nanosecond pulsed laser (248 nm, 20 ns, ns-DLC). Alternative ablation of the graphite and boron targets has been carried out to deposit the a-C:B films. The film structure and composition have been highlighted by coupling Field Emission Scanning Electron Microscopy, Electron Energy Loss Spectroscopy and High Resolution Transmission Electron Microscopy. Using the B K-edge, EELS characterization reveals the boron effect on the carbon bonding. Moreover, the plasmon energy reveals a tendency of graphitization associated to the boron doping. Pure boron particles have been characterized by HRTEM and reveal that those particles are amorphous or crystallized. The nanostructures of the boron-doped ns-DLC and the boron-doped fs-DLC are thus compared. In particular, the incorporation of boron in the DLC matrix is highlighted, depending on the laser used for deposition. Electrical measurements show that some of these films have potentialities to be used in low temperature thermometry, considering their conductivity and temperature coefficient of resistance (TCR) estimated within the temperature range 160-300 K.

Determination of boron in borosilicate glasses by neutron capture prompt gamma-ray activation analysis

Energy Technology Data Exchange (ETDEWEB)

Riley, Jr, J E; Lindstrom, R M

1987-01-01

Major levels of boron in borosilicate glasses were determined nondestructively by neutron activation analysis. The effects of neutron self-shielding by boron (1 to 8% by weight) are examined. Results of the analysis of a series of glasses with increasing boron composition are 1.150 +- .005% and 7.766 +- .035% for the low and high members of the series. Once analyzed, the glasses are useful as secondary standards for alpha track counting, and also ion and electron microprobe analyses of glasses. 12 refs.; 3 tables.

Simulation of STM technique for electron transport through boron-nitride nanotubes

International Nuclear Information System (INIS)

Ganji, M.D.; Mohammadi-nejad, A.

2008-01-01

We report first-principles calculations on the electrical transport properties of boron-nitrid nanotubes (BNNTs). We consider a single walled (5,0) boron-nitrid nanotube sandwiched between an Au(1 0 0) substrate and a monatomic Au scanning tunneling microscope (STM) tip. Lateral motion of the tip over the nanotube wall cause it to change from one conformation class to the others and to switch between a strongly and a weakly conducting state. Thus, surprisingly, despite their apparent simplicity these Au/BNNT/Au nanowires are shown to be a convenient switch. Experiments with a conventional STM are proposed to test these predictions. The projection of the density of states (PDOS) and the transmission coefficients T(E) of the two-probe systems at zero bias are analyzed, and it suggests that the variation of the coupling between the wire and the electrodes leads to switching behaviour

Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures

International Nuclear Information System (INIS)

Chicot, G.; Fiori, A.; Tran Thi, T. N.; Bousquet, J.; Delahaye, J.; Grenet, T.; Eon, D.; Omnès, F.; Bustarret, E.; Volpe, P. N.; Tranchant, N.; Mer-Calfati, C.; Arnault, J. C.; Gerbedoen, J. C.; Soltani, A.; De Jaeger, J. C.; Alegre, M. P.; Piñero, J. C.; Araújo, D.; Jomard, F.

2014-01-01

Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single crystal diamond substrates were used after being characterized by X-ray white beam topography. The chemical composition and thickness of these so-called delta-doped structures have been studied by secondary ion mass spectrometry, transmission electron microscopy, and spectroscopic ellipsometry. Temperature-dependent Hall effect and four probe resistivity measurements have been performed on mesa-patterned Hall bars. The temperature dependence of the hole sheet carrier density and mobility has been investigated over a broad temperature range (6 K  2 /Vs, independently of the layer thickness and the substrate type. Comparison with previously published data and theoretical calculations showed that scattering by ionized impurities explained only partially this low common value. None of the delta-layers showed any sign of confinement-induced mobility enhancement, even for thicknesses lower than 2 nm

Structure of boron nitride after the high-temperature shock compression

International Nuclear Information System (INIS)

Kurdyumov, A.V.; Ostrovskaya, N.F.; Pilipenko, V.A.; Pilyankevich, A.N.; Savvakin, G.I.; Trefilov, V.I.

1979-01-01

Boron nitride structure changes as a result of high temperature dynamic compression are studied. The X-ray technique and transmission electron microscopy have been applied. The data on the structure and regularities of formation of diamond-like modifications of boron nitride at high temperature impact compression permit to consider martensite transformation as the first stage of formation of the sphalerite phase stable at high pressures. The second stage is possible if the temperature at the impact moment is sufficiently high for intensive diffusion processes

Effect of oxygen deficiency on electronic properties and local structure of amorphous tantalum oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Denny, Yus Rama [Department of Physics Education, University of Sultan Ageng Tirtayasa, Banten 42435 (Indonesia); Firmansyah, Teguh [Department of Electrical Engineering, University of Sultan Ageng Tirtayasa, Banten 42435 (Indonesia); Oh, Suhk Kun [Department of Physics, Chungbuk National University, Cheongju 28644 (Korea, Republic of); Kang, Hee Jae, E-mail: hjkang@cbu.ac.kr [Department of Physics, Chungbuk National University, Cheongju 28644 (Korea, Republic of); Yang, Dong-Seok [Department of Physics Education, Chungbuk National University, Cheongju 28644 (Korea, Republic of); Heo, Sung; Chung, JaeGwan; Lee, Jae Cheol [Analytical Engineering Center, Samsung Advanced Institute of Technology, Suwon 16678 (Korea, Republic of)

2016-10-15

Highlights: • The effect of oxygen flow rate on electronic properties and local structure of tantalum oxide thin films was studied. • The oxygen deficiency induced the nonstoichiometric state a-TaOx. • A small peak at 1.97 eV above the valence band side appeared on nonstoichiometric Ta{sub 2}O{sub 5} thin films. • The oxygen flow rate can change the local electronic structure of tantalum oxide thin films. - Abstract: The dependence of electronic properties and local structure of tantalum oxide thin film on oxygen deficiency have been investigated by means of X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and X-ray absorption spectroscopy (XAS). The XPS results showed that the oxygen flow rate change results in the appearance of features in the Ta 4f at the binding energies of 23.2 eV, 24.4 eV, 25.8, and 27.3 eV whose peaks are attributed to Ta{sup 1+}, Ta{sup 2+}, Ta{sup 3+}/Ta{sup 4+}, and Ta{sup 5+}, respectively. The presence of nonstoichiometric state from tantalum oxide (TaOx) thin films could be generated by the oxygen vacancies. In addition, XAS spectra manifested both the increase of coordination number of the first Ta-O shell and a considerable reduction of the Ta-O bond distance with the decrease of oxygen deficiency.

Novel semiconducting boron carbide/pyridine polymers for neutron detection at zero bias

Energy Technology Data Exchange (ETDEWEB)

Echeverria, Elena; Enders, A.; Dowben, P.A. [University of Nebraska-Lincoln, Department of Physics and Astronomy, Lincoln, NE (United States); James, Robinson; Chiluwal, Umesh; Gapfizi, Richard; Tae, Jae-Do; Driver, M. Sky; Kelber, Jeffry A. [University of North Texas, Department of Chemistry, Denton, TX (United States); Pasquale, Frank L. [University of North Texas, Department of Chemistry, Denton, TX (United States); Lam Research Corporation, PECVD Business Unit, Tualatin, OR (United States); Colon Santana, Juan A. [Center for Energy Sciences Research, Lincoln, NE (United States)

2014-09-19

Thin films containing aromatic pyridine moieties bonded to boron, in the partially dehydrogenated boron-rich icosahedra (B{sub 10}C{sub 2}H{sub X}), prove to be an effective material for neutron detection applications when deposited on n-doped (100) silicon substrates. The characteristic I-V curves for the heterojunction diodes exhibit strong rectification and largely unperturbed normalized reverse bias leakage currents with increasing pyridine content. The neutron capture generated pulses from these heterojunction diodes were obtained at zero bias voltage although without the signatures of complete electron-hole collection. These results suggest that modifications to boron carbide may result in better neutron voltaic materials. (orig.)

Use of calcium and boron in the production of grain and sunflower silage

Directory of Open Access Journals (Sweden)

Thomas Newton Martin

2014-09-01

Full Text Available Boron and calcium are related to many physiological processes of the plant, which are affected by its deficiency, such as sugar transport, synthesis and cell wall structure, carbohydrate metabolism and plasma membrane integrity. The objective of this study was to evaluate the efficiency of boron and calcium application via leaf and soil on the yield components in silage quality and content of macronutrients in leaves of sunflower. The experiment was conducted at Universidade Tecnológica Federal do Paraná – UTFPR, Campus Dois Vizinhos, from September 2008 to April 2009, in a randomized block design with four replications, using the genotype Agrobel - La Tijereta. Morphological characteristics of the plants, the yield components (grain yield and weight of hundred grains, silage quality and content of nutrient uptake were evaluated. The sunflower crop did not respond to application of boron and calcium, to effects on yield components in silage quality and content of nutrients absorbed by plants. However, it was found increases in the partition dry grain and plant height.

Rectifying Properties of a Nitrogen/Boron-Doped Capped-Carbon-Nanotube-Based Molecular Junction

International Nuclear Information System (INIS)

Zhao Peng; Zhang Ying; Wang Pei-Ji; Zhang Zhong; Liu De-Sheng

2011-01-01

Based on the non-equilibrium Green's function method and first-principles density functional theory calculations, we investigate the electronic transport properties of a nitrogen/boron-doped capped-single-walled carbon-nanotube-based molecular junction. Obvious rectifying behavior is observed and it is strongly dependent on the doping site. The best rectifying performance can be carried out when the nitrogen/boron atom dopes at a carbon site in the second layer. Moreover, the rectifying performance can be further improved by adjusting the distance between the C 60 nanotube caps. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Synthesis and characterization of p-type boron-doped IIb diamond large single crystals

International Nuclear Information System (INIS)

Li Shang-Sheng; Li Xiao-Lei; Su Tai-Chao; Jia Xiao-Peng; Ma Hong-An; Huang Guo-Feng; Li Yong

2011-01-01

High-quality p-type boron-doped IIb diamond large single crystals are successfully synthesized by the temperature gradient method in a china-type cubic anvil high-pressure apparatus at about 5.5 GPa and 1600 K. The morphologies and surface textures of the synthetic diamond crystals with different boron additive quantities are characterized by using an optical microscope and a scanning electron microscope respectively. The impurities of nitrogen and boron in diamonds are detected by micro Fourier transform infrared technique. The electrical properties including resistivities, Hall coefficients, Hall mobilities and carrier densities of the synthesized samples are measured by a four-point probe and the Hall effect method. The results show that large p-type boron-doped diamond single crystals with few nitrogen impurities have been synthesized. With the increase of quantity of additive boron, some high-index crystal faces such as {113} gradually disappear, and some stripes and triangle pits occur on the crystal surface. This work is helpful for the further research and application of boron-doped semiconductor diamond. (cross-disciplinary physics and related areas of science and technology)

Manganese catalyzed cis-dihydroxylation of electron deficient alkenes with H2O2

NARCIS (Netherlands)

Saisaha, Pattama; Pijper, Dirk; van Summeren, Ruben P.; Hoen, Robert; Smit, Christian; de Boer, Johannes W.; Hage, Ronald; Alsters, Paul L.; Feringa, Bernard; Browne, Wesley R.

2010-01-01

A practical method for the multigram scale selective cis-dihydroxylation of electron deficient alkenes such as diethyl fumarate and N-alkyl and N-aryl-maleimides using H2O2 is described. High turnovers (>1000) can be achieved with this efficient manganese based catalyst system, prepared in situ from

The study of high-boron steel and high-boron cast iron used for shield

International Nuclear Information System (INIS)

Pan Xuerong; Lu Jixin; Wen Yaozeng; Wang Zhaishu; Cheng Jiantin; Cheng Wen; Shun Danqi; Yu Jinmu

1996-12-01

The smelting, forging, heat-treatment technology and the mechanical properties of three kinds of high-boron steels (type 1: 0.5% boron; type 2: 0.5% boron and 4% or 2% nickel; type 3: 0.5% boron, 0.5% nickel and 0.5% molybdenum) were studied. The test results show that the technology for smelting, forging and heat-treatment (1050 degree C/0.5 h water cooled + 810 degree C/1 h oil cooled) in laboratory is feasible. Being sensitive to notch, the impact toughness of high-boron steel type 1 is not steady and can not meet the technology requirements on mechanical properties. The mechanical properties of both high-boron steel type 2 and type 3 can meet the technological requirements. The smelting technology of high-boron casting iron containing 0.5% boron was researched. The tests show that this casting iron can be smelted in laboratory and its properties can basically satisfy the technology requirements. (10 refs., 6 figs., 11 tab.)

Growing of synthetic diamond boron-doped films for analytical applications

International Nuclear Information System (INIS)

Barros, Rita de Cassia Mendes de; Suarez-Iha, Maria Encarnacion Vazquez; Corat, Evaldo Jose; Iha, Koshun

1999-01-01

Chemical vapor deposition (CVD) technology affords the possibility of producing synthetic diamond film electrodes, with several advantageous properties due the unique characteristics of diamond. In this work, we present the study of boron-doped diamond films growth on molybdenum and silicon substrates, using boron trioxide as dopant in a filament assisted CVD reactor. The objective was to obtain semiconductor diamond for use as electrode. The samples were characterized by scanning electron microscopy and Raman spectroscopy to confirm morphology and doping levels. We have assembled electrodes with the various samples, Pt, Mo, Si and diamond, by utilizing brass and left as base materials. The electrodes were tested in neutralization potentiometric titrations for future use in electroanalysis. Boron-doped electrodes have very good performance compared with Pt, widely used in analytical chemistry. (author)

Synthesis of hexagonal boron nitride graphene-like few layers

Science.gov (United States)

Yuan, S.; Toury, B.; Journet, C.; Brioude, A.

2014-06-01

Self-standing highly crystallized hexagonal boron nitride (h-BN) mono-, bi- and few-layers have been obtained for the first time via the Polymer Derived Ceramics (PDCs) route by adding lithium nitride (Li3N) micropowders to liquid-state polyborazylene (PBN). Incorporation of Li3N as a crystallization promoter allows the onset of crystallization of h-BN at a lower temperature (1200 °C) than under classical conditions (1800 °C). The hexagonal structure was confirmed by both electron and X-ray diffraction.Self-standing highly crystallized hexagonal boron nitride (h-BN) mono-, bi- and few-layers have been obtained for the first time via the Polymer Derived Ceramics (PDCs) route by adding lithium nitride (Li3N) micropowders to liquid-state polyborazylene (PBN). Incorporation of Li3N as a crystallization promoter allows the onset of crystallization of h-BN at a lower temperature (1200 °C) than under classical conditions (1800 °C). The hexagonal structure was confirmed by both electron and X-ray diffraction. Electronic supplementary information (ESI) available: See DOI: 10.1039/c4nr01017e

Role of carbon in boron suboxide thin films

International Nuclear Information System (INIS)

Music, Denis; Kugler, Veronika M.; Czigany, Zsolt; Flink, Axel; Werner, Oskar; Schneider, Jochen M.; Hultman, Lars; Helmersson, Ulf

2003-01-01

Boron suboxide thin films, with controlled carbon content, were grown by rf dual magnetron sputtering of boron and carbon targets in an argon-oxygen atmosphere. Film composition, structure, mechanical, and electrical properties were evaluated with x-ray photoelectron spectroscopy, Auger electron spectroscopy, x-ray diffraction, transmission electron microscopy, nanoindentation, and high-frequency capacitance-voltage measurements. X-ray amorphous B-O-C films (O/B=0.02) showed an increase in density from 2.0 to 2.4 g/cm 3 as C content was increased from 0 to 0.6 at. % and the film with the highest density had nanocrystalline inclusions. The density increase occurred most likely due to the formation of B-C bonds, which are shorter than B-B bonds. All measured material properties were found to depend strongly on the C content and thus film density. The elastic modulus increased from 188 to 281 GPa with the increasing C content, while the relative dielectric constant decreased from 19.2 to 0.9. Hence, B-O-C films show a potential for protective coatings and even for application in electronic and optical devices

Lattice dynamics of α boron and of boron carbide

International Nuclear Information System (INIS)

Vast, N.

1999-01-01

The atomic structure and the lattice dynamics of α boron and of B 4 C boron carbide have been studied by Density Functional Theory (D.F.T.) and Density Functional Perturbation Theory (D.F.P.T.). The bulk moduli of the unit-cell and of the icosahedron have been investigated, and the equation of state at zero temperature has been determined. In α boron, Raman diffusion and infrared absorption have been studied under pressure, and the theoretical and experimental Grueneisen coefficients have been compared. In boron carbide, inspection of the theoretical and experimental vibrational spectra has led to the determination of the atomic structure of B 4 C. Finally, the effects of isotopic disorder have been modeled by an exact method beyond the mean-field approximation, and the effects onto the Raman lines has been investigated. The method has been applied to isotopic alloys of diamond and germanium. (author)

Research of boron conversion coating in neutron detector with boron deposited GEM

International Nuclear Information System (INIS)

Ye Di; Sun Zhijia; Zhou Jianrong; Wang Yanfeng; Yang Guian; Xu Hong; Chen Yuanbai; Xiao Yu; Diao Xungang

2014-01-01

GEM is a flourishing new gas detector and nowadays its technology become more mature. It has outstanding properties, such as excellent position resolution, high counting rate, radiation resistance, simple and flexible signal readout, can be large-area detector, wide application range. Detector with boron deposited GEM uses multilayer GEM with deposited boron film as neutron conversion carrier which reads out the information of neutron shot from the readout electrode with gas amplification from every GEM layer. The detector is high performance which can meet the demands of neutron detector of a new generation. Boron deposited neutron conversion electrode with boron deposited cathode and GEM included is the core part of the detector. As boron is a high-melting-point metalloid (> 2 000 ℃), electroplating and thermal evaporation are inappropriate ways. So finding a way to deposit boron on electrode which can meet the demands become a key technology in the development of neutron detector with boron deposited GEM. Compared with evaporation, sputtering has features such as low deposition temperature, high film purity, nice adhesive, thus is appropriate for our research. Magnetron sputtering is a improved way of sputtering which can get lower sputtering air pressure and higher target voltage, so that we can get better films. Through deposit process, the research uses magnetron sputtering to deposit pure boron film on copper electrode and GEM film. This method can get high quality, nice adhere, high purity, controllable uniformity, low cost film with high speed film formation. (authors)

CVD mechanism of pyrolytic boron nitride

International Nuclear Information System (INIS)

Tanji, H.; Monden, K.; Ide, M.

1987-01-01

Pyrolytic boron nitride (P-BN) has become a essential material for III-V compound semiconductor manufacturing process. As the demand from electronics industry for larger single crystals increases, the demand for larger and more economical P-BN components is growing rapidly. P-BN is manufactured by low pressure CVD using boron-trihalides and ammonia as the reactants. In spite that P-BN has been in the market for quite a long time, limited number of fundamental studies regarding the kinetics and the formation mechanism of P-BN have been reported. As it has been demonstrated in CVD of Si, knowledge and both theoretical and empirical modeling of CVD process can be applied to improve the deposition technology and to give more uniform deposition with higher efficiency, and it should also apply to the deposition of P-BN

Tribological properties of nitrogen implanted and boron implanted steels

International Nuclear Information System (INIS)

Kern, K.T.

1996-01-01

Samples of a steel with high chrome content was implanted separately with 75 keV nitrogen ions and with 75 keV boron ions. Implanted doses of each ion species were 2-, 4-, and 8 x 10 17 /cm 2 . Retained doses were measured using resonant non-Rutherford Backscattering Spectrometry. Tribological properties were determined using a pin-on-disk test with a 6-mm diameter ruby pin with a velocity of 0.94 m/min. Testing was done at 10% humidity with a load of 377 g. Wear rate and coefficient of friction were determined from these tests. While reduction in the wear rate for nitrogen implanted materials was observed, greater reduction (more than an order of magnitude) was observed for boron implanted materials. In addition, reduction in the coefficient of friction for high-dose boron implanted materials was observed. Nano-indentation revealed a hardened layer near the surface of the material. Results from grazing incidence x-ray diffraction suggest the formation of Fe 2 N and Fe 3 N in the nitrogen implanted materials and Fe 3 B in the boron implanted materials. Results from transmission electron microscopy will be presented

Electrical conductivity enhancement by boron-doping in diamond using first principle calculations

Science.gov (United States)

Ullah, Mahtab; Ahmed, Ejaz; Hussain, Fayyaz; Rana, Anwar Manzoor; Raza, Rizwan

2015-04-01

Boron doping in diamond plays a vital role in enhancing electrical conductivity of diamond by making it a semiconductor, a conductor or even a superconductor. To elucidate this fact, partial and total density of states has been determined as a function of B-content in diamond. Moreover, the orbital charge distributions, B-C bond lengths and their population have been studied for B-doping in pristine diamond thin films by applying density functional theory (DFT). These parameters have been found to be influenced by the addition of different percentages of boron atoms in diamond. The electronic density of states, B-C bond situations as well as variations in electrical conductivities of diamond films with different boron content and determination of some relationship between these parameters were the basic tasks of this study. Diamond with high boron concentration (∼5.88% B-atoms) showed maximum splitting of energy bands (caused by acceptor impurity states) at the Fermi level which resulted in the enhancement of electron/ion conductivities. Because B atoms either substitute carbon atoms and/or assemble at grain boundaries (interstitial sites) inducing impurity levels close to the top of the valence band. At very high B-concentration, impurity states combine to form an impurity band which accesses the top of the valence band yielding metal like conductivity. Moreover, bond length and charge distributions are found to decrease with increase in boron percentage in diamond. It is noted that charge distribution decreased from +1.89 to -1.90 eV whereas bond length reduced by 0.04 Å with increasing boron content in diamond films. These theoretical results support our earlier experimental findings on B-doped diamond polycrystalline films which depict that the addition of boron atoms to diamond films gives a sudden fall in resistivity even up to 105 Ω cm making it a good semiconductor for its applications in electrical devices.

Secondary processes in gaseous boron accompanying the cascade decay of the 1s-vacancy

International Nuclear Information System (INIS)

Bruehl, S.; Kochur, A.G.

2009-01-01

We employ the Monte-Carlo technique to simulate the processes in gaseous boron initiated by 1s-photoionization of boron atoms. The processes of excitations/ionizations of atoms by photons and electrons emitted by the neighboring decaying atoms are considered. It is found that the medium effect becomes noticeable at atomic densities of about 2.5·10 20 m -3 . (authors)

Pd(II)-Catalyzed Olefination of Electron-Deficient Arenes Using 2,6-Dialkylpyridine Ligands

Science.gov (United States)

Zhang, Yang-Hui; Shi, Bing-Feng; Yu, Jin-Quan

2009-01-01

Pd(II)-catalyzed meta-olefination of highly electron deficient arenes is achieved through the use of a rationally designed mutually repulsive ligand. The combination of directed and non-directed C–H functionalization of arenes provides a versatile route for the synthesis of highly sought-after 1,2,4-trisubstituted arenes. PMID:19296661

Microstructure and spectroscopy studies on cubic boron nitride synthesized under high-pressure conditions

International Nuclear Information System (INIS)

Nistor, L C; Nistor, S V; Dinca, G; Georgeoni, P; Landuyt, J van; Manfredotti, C; Vittone, E

2002-01-01

High-resolution electron microscopy (HREM) studies of the microstructure and specific defects in hexagonal boron nitride (h-BN) precursors and cubic boron nitride (c-BN) crystals made under high-pressure high-temperature conditions revealed the presence of half-nanotubes at the edges of the h-BN particles. Their sp 3 bonding tendency could strongly influence the nucleation rates of c-BN. The atomic resolution at extended dislocations was insufficient to allow us to determine the stacking fault energy in the c-BN crystals. Its mean value of 191 pm, 15 mJ m -2 is of the same order of magnitude as that of diamond. High-frequency (94 GHz) electron paramagnetic resonance studies on c-BN single crystals have produced new data on the D1 centres associated with the boron species. Ion-beam-induced luminescence measurements have indicated that c-BN is a very interesting luminescent material, which is characterized by four luminescence bands and exhibits a better resistance to ionizing radiation than CVD diamond

Rare-earth doped boron nitride nanotubes: Synthesis and characterization

Energy Technology Data Exchange (ETDEWEB)

Silva, Wellington Marcos; Sousa, Edesia Martins Barros de, E-mail: wellingtonmarcos@yahoo.com.br [Centro de Desenvolvimento da Tecnologia Nuclear (CDTN/CNEN-MG), Belo Horizonte, MG (Brazil)

2016-07-01

Full text: Boron nitride is a heat and chemically resistant refractory compound of boron and nitrogen atoms with the chemical formula BN. This structure exists in various crystalline forms that are isoelectronic to a similarly structured carbon lattice. The hexagonal form (h-BN) corresponding to graphite is the most stable and soft among BN polymorph. However, boron nitride nanotubes (BNNTs) were first time synthesized in 1995 [1] and have a type of one-dimensional (1D) nanostructure. Recently the BNNTs have attracted significant interest for scientific and technological applications due to their Wide bandgap. The Wide-bandgap semiconductors doped with rare-earth are considered as a new type of luminescent material, combining special Wide bandgap semiconducting properties with the rare-earth luminescence feature. BNNTs have a stable wide bandgap of 5.5 eV and super thermal and chemical stabilities, which make BNNTs an ideal nanosized luminescent material [2]. In this study, we report a simple and efficient route for the synthesis of BNNTs doped with samarium and europium. High quality BNNTs doped was produced via CVD technique using NH{sub 3} and N{sub 2} gases as source. Boron amorphous, catalyst and oxides rare-earth powder were used as precursor. Detailed studies involving energy-dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), Raman spectroscopy, Fourier-transform infrared spectroscopy (FTIR), scanning electron microscope (SEM) and transmission electron microscope (TEM) were performed in order to characterize the BNNTs as grown. [1] Chopra, N. G.; Luyken, R. J. et al. Science, v. 269, p. 966-967, 1995. [2] Chen, H.; Chen, Y. et al. Adv. Matter. v. 19, p. 1845-1848, 2007. (author)

Rare-earth doped boron nitride nanotubes: Synthesis and characterization

International Nuclear Information System (INIS)

Silva, Wellington Marcos; Sousa, Edesia Martins Barros de

2016-01-01

Full text: Boron nitride is a heat and chemically resistant refractory compound of boron and nitrogen atoms with the chemical formula BN. This structure exists in various crystalline forms that are isoelectronic to a similarly structured carbon lattice. The hexagonal form (h-BN) corresponding to graphite is the most stable and soft among BN polymorph. However, boron nitride nanotubes (BNNTs) were first time synthesized in 1995 [1] and have a type of one-dimensional (1D) nanostructure. Recently the BNNTs have attracted significant interest for scientific and technological applications due to their Wide bandgap. The Wide-bandgap semiconductors doped with rare-earth are considered as a new type of luminescent material, combining special Wide bandgap semiconducting properties with the rare-earth luminescence feature. BNNTs have a stable wide bandgap of 5.5 eV and super thermal and chemical stabilities, which make BNNTs an ideal nanosized luminescent material [2]. In this study, we report a simple and efficient route for the synthesis of BNNTs doped with samarium and europium. High quality BNNTs doped was produced via CVD technique using NH 3 and N 2 gases as source. Boron amorphous, catalyst and oxides rare-earth powder were used as precursor. Detailed studies involving energy-dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), Raman spectroscopy, Fourier-transform infrared spectroscopy (FTIR), scanning electron microscope (SEM) and transmission electron microscope (TEM) were performed in order to characterize the BNNTs as grown. [1] Chopra, N. G.; Luyken, R. J. et al. Science, v. 269, p. 966-967, 1995. [2] Chen, H.; Chen, Y. et al. Adv. Matter. v. 19, p. 1845-1848, 2007. (author)

Note on boron toxicity in oats

Energy Technology Data Exchange (ETDEWEB)

Langille, W M; Mahoney, J F

1959-01-01

Boron was applied at the rate of 35 pounds per acre of borax to a field of oats. With the first noticeable growth there appeared a definite chlorotic condition of the oat seedlings on plots receiving boron treatments. Analysis of chlorotic tissue at 3 weeks after seeding indicated 110 ppm boron, while apparently healthy tissue contained 6.1 ppm boron at the same stage of growth. There was a rapid decline in the boron content of the oat tissue as the crop grew older. At maturity the oat tissue from the boron-treated plots contained an average of 14.15 ppm boron as compared with 4.10 boron from untreated areas. Boron toxicity had no harmful effect so far as yields were concerned, under the conditions of this experiment. 3 references.

Method for producing polycrystalline boron nitride

International Nuclear Information System (INIS)

Alexeevskii, V.P.; Bochko, A.V.; Dzhamarov, S.S.; Karpinos, D.M.; Karyuk, G.G.; Kolomiets, I.P.; Kurdyumov, A.V.; Pivovarov, M.S.; Frantsevich, I.N.; Yarosh, V.V.

1975-01-01

A mixture containing less than 50 percent of graphite-like boron nitride treated by a shock wave and highly defective wurtzite-like boron nitride obtained by a shock-wave method is compressed and heated at pressure and temperature values corresponding to the region of the phase diagram for boron nitride defined by the graphite-like compact modifications of boron nitride equilibrium line and the cubic wurtzite-like boron nitride equilibrium line. The resulting crystals of boron nitride exhibit a structure of wurtzite-like boron nitride or of both wurtzite-like and cubic boron nitride. The resulting material exhibits higher plasticity as compared with polycrystalline cubic boron nitride. Tools made of this compact polycrystalline material have a longer service life under impact loads in machining hardened steel and chilled iron. (U.S.)

Electron-deficient anthraquinone derivatives as cathodic material for lithium ion batteries

Science.gov (United States)

Takeda, Takashi; Taniki, Ryosuke; Masuda, Asuna; Honma, Itaru; Akutagawa, Tomoyuki

2016-10-01

We studied the electronic and structural properties of electron-deficient anthraquinone (AQ) derivatives, Me4N4AQ and TCNAQ, and investigated their charge-discharge properties in lithium ion batteries along with those of AQ. Cyclic voltammogram, X-ray structure analysis and theoretical calculations revealed that these three acceptors have different features, such as different electron-accepting properties with different reduction processes and lithium coordination abilities, and different packing arrangements with different intermolecular interactions. These differences greatly affect the charge-discharge properties of lithium ion batteries that use these compounds as cathode materials. Among these compounds, Me4N4AQ showed a high charge/discharge voltage (2.9-2.5 V) with high cyclability (>65% of the theoretical capacity after 30 cycles; no decrease after 15 cycles). These results provide insight into more in-depth design principles for lithium ion batteries using AQ derivatives as cathodic materials.

Radiochemical studies of neutron deficient actinide isotopes

International Nuclear Information System (INIS)

Williams, K.E.

1978-04-01

The production of neutron deficient actinide isotopes in heavy ion reactions was studied using alpha, gamma, x-ray, and spontaneous fission detection systems. A new isotope of berkelium, 242 Bk, was produced with a cross-section of approximately 10 μb in reactions of boron on uranium and nitrogen on thorium. It decays by electron capture with a half-life of 7.0 +- 1.3 minutes. The alpha-branching ratio for this isotope is less than 1% and the spontaneous fission ratio is less than 0.03%. Studies of (Heavy Ion, pxn) and (Heavy Ion, αxn) transfer reactions in comparison with (Heavy ion, xn) compound nucleus reactions revealed transfer reaction cross-sections equal to or greater than the compound nucleus yields. The data show that in some cases the yield of an isotope produced via a (H.I.,pxn) or (H.I.,αxn) reaction may be higher than its production via an xn compound nucleus reaction. These results have dire consequences for proponents of the ''Z 1 + Z 2 = Z/sub 1+2/'' philosophy. It is no longer acceptable to assume that (H.I.,pxn) and (H.I.,αxn) product yields are of no consequence when studying compound nucleus reactions. No evidence for spontaneous fission decay of 228 Pu, 230 Pu, 232 Cm, or 238 Cf was observed indicating that strictly empirical extrapolations of spontaneous fission half-life data is inadequate for predictions of half-lives for unknown neutron deficient actinide isotopes

Quantifying electronic band interactions in van der Waals materials using angle-resolved reflected-electron spectroscopy.

Science.gov (United States)

Jobst, Johannes; van der Torren, Alexander J H; Krasovskii, Eugene E; Balgley, Jesse; Dean, Cory R; Tromp, Rudolf M; van der Molen, Sense Jan

2016-11-29

High electron mobility is one of graphene's key properties, exploited for applications and fundamental research alike. Highest mobility values are found in heterostructures of graphene and hexagonal boron nitride, which consequently are widely used. However, surprisingly little is known about the interaction between the electronic states of these layered systems. Rather pragmatically, it is assumed that these do not couple significantly. Here we study the unoccupied band structure of graphite, boron nitride and their heterostructures using angle-resolved reflected-electron spectroscopy. We demonstrate that graphene and boron nitride bands do not interact over a wide energy range, despite their very similar dispersions. The method we use can be generally applied to study interactions in van der Waals systems, that is, artificial stacks of layered materials. With this we can quantitatively understand the 'chemistry of layers' by which novel materials are created via electronic coupling between the layers they are composed of.

Electrochemical characterization of doped diamond-coated carbon fibers at different boron concentrations

Energy Technology Data Exchange (ETDEWEB)

Almeida, E.C. [INPE, CP 515, Sao Jose dos Campos, SP 12201-970 (Brazil)]. E-mail: erica@las.inpe.br; Diniz, A.V. [INPE, CP 515, Sao Jose dos Campos, SP 12201-970 (Brazil); Trava-Airoldi, V.J. [INPE, CP 515, Sao Jose dos Campos, SP 12201-970 (Brazil); Ferreira, N.G. [CTA-Divisao de Materiais, Sao Jose dos Campos, SP 12228-904 (Brazil)

2005-08-01

Doped diamond films have been deposited on carbon fibers (felt) obtained from polyacrylonitrile at different levels of boron doping. For a successful coating of the fibers, an ultrasonic pretreatment in a bath of diamond powder dissolved in hexane was required. Films were grown on both sample sides, simultaneously, by hot filament-assisted chemical vapour deposition technique at 750 deg. C from a 0.5% H{sub 2}/CH{sub 4} mixture at a total pressure of 6.5 x 10{sup 3} Pa. Boron was obtained from H{sub 2} forced to pass through a bubbler containing B{sub 2}O{sub 3} dissolved in methanol. The doping level studied corresponds to films with acceptor concentrations in the range of 6.5 x 10{sup 18} to 1.5 x 10{sup 21} cm{sup -} {sup 3}, obtained from Mott-Schottky plots. Scanning electron microscopy analyses evidenced fibers totally covered with high quality polycrystalline boron-doped diamond film, also confirmed by Raman spectroscopy spectra. Diamond electrodes grown on carbon fibers demonstrated similar electrochemical behavior obtained from films on Si substrate, for ferri/ferrocyanide redox couple as a function of boron content. The boron content influences electrochemical surface area. A lower boron concentration provides a higher growth rate that results in a higher surface area.

Engineering the work function of buckled boron α-sheet by lithium adsorption: a first-principles investigation.

Science.gov (United States)

Zheng, Bing; Yu, Hai-tao; Xie, Ying; Lian, Yong-fu

2014-11-26

First-principles density functional theory calculations were performed to study the effect of Li adsorption on the structural and electronic properties, particularly the work function, of boron α-sheet. The calculated binding energies indicated that boron α-sheet could be well stabilized by the adsorption of Li atoms. Furthermore, the work functions of Li-adsorbed boron α-sheets were observed to decrease drastically with increasing Li coverage. The work functions are lower than that of Mg and even, for some of them, lower than that of Ca, indicating a considerable potential application of Li-adsorbed boron α-sheets as field-emission and electrode materials. Based on the calculated geometric and electronic structures, we discuss in details some possible aspects affecting the work function. The Li coverage dependence of the work functions of Li-adsorbed boron α-sheets was further confirmed by electrostatic potential analyses. The relationship between the work function variation and the Fermi and vacuum energy level shifts was also discussed, and we observed that the variation of the work function is primarily associated with the shift of the Fermi energy level. It is the surface dipole formed by the interaction between adatoms and substrate that should be responsible for the observed variation of the work function, whereas the increasing negative charge and rumpling for boron α-sheet only play minor roles. Additionally, the effect of Li adatoms on the work function of boron α-sheet was confirmed to be much stronger than that of graphene or a graphene double layer.

Boron-11 MRI and MRS of intact animals infused with a boron neutron capture agent

International Nuclear Information System (INIS)

Kabalka, G.W.; Davis, M.; Bendel, P.

1988-01-01

Boron neutron capture therapy (BNCT) depends on the delivery of boron-containing drugs to a targeted lesion. Currently, the verification and quantification of in vivo boron content is a difficult problem. Boron-11 spectroscopy was utilized to confirm the presence of a dimeric sulfhydryl dodecaborane BNCT agent contained in an intact animal. Spectroscopy experiments revealed that the decay time of transverse magnetization of the boron-11 spins was less than 1 ms which precluded the use of a 2DFT imaging protocol. A back-projection protocol was developed and utilized to generate the first boron-11 image of a BNCT agent in the liver of an intact Fisher 344 rat

Effect of boron and carbon addition on microstructure and mechanical properties of Ti-15-3 alloy

International Nuclear Information System (INIS)

Sarkar, R.; Ghosal, P.; Muraleedharan, K.; Nandy, T.K.; Ray, K.K.

2011-01-01

Highlights: → Development of β Ti alloys with B and C addition for improved mechanical properties. → Detailed characterization of microstructural constituents using electron microscopy. → Microstructure-mechanical property correlation in this new class of alloys. → Strengthening mechanism in β Ti alloy in the presence of hard and non-deformable phases. - Abstract: A detailed microstructure-mechanical property correlation was carried out in beta titanium alloys (Ti-15V-3Al-3Sn-3Cr) with boron and carbon additions. The alloys were prepared by non-consumable vacuum arc melting followed by hot rolling. Microstructural characterization was carried out using an optical microscope, a scanning electron microscope (SEM), a transmission electron microscope (TEM) and a high resolution TEM (HRTEM). Addition of boron and carbon resulted in the precipitation of TiB and TiC, respectively, and these phases acted as reinforcements. Evaluation of mechanical properties in solution treated and solution treated plus aged condition showed strengthening in the boron and carbon containing alloy with respect to the base. Strengthening in solution treated condition was attributed to a synergistic effect of grain refinement and load transfer in the presence of non-deformable phases. On the other hand, higher strength in boron and carbon containing alloys on aging was ascribed to the presence of finer aged microstructures.

Improved tribological behavior of boron implanted Ti-6Al-4V

International Nuclear Information System (INIS)

Baker, N.P.; Walter, K.C.; Nastasi, M.

1998-03-01

Boron implanted of Ti6Al4V has been conducted at combinations of 32 and 40 keV to supplement that done previously at 75 keV. Shallower boron depth profiles with higher B-concentrations in the Ti64 surface have been obtained by tailoring the combinations of ion energy and dose. This work used three different ion energy and dose combinations of 4 x 10 17 B-at/cm 2 at 40 keV plus 2 x 10 17 B-at/cm 2 at 32 keV, 4 x 10 17 B-at/cm 2 at 40 keV, and 4 x 10 17 B-at/cm 2 at 32 keV plus 2 x 10 17 B-at/cm 2 at 40 keV. Comparisons are made between Ti6Al4V with a shallow implanted boron depth profile, Ti6Al4V with a deeper boron depth profile and nitrogen implanted using a plasma source ion implantation process. It has been previously shown that while boron implanted Ti64 has a ∼ 30% higher surface hardness than nitrogen implanted Ti64, the N-implantation reduced the wear coefficient of Ti64 by 25--120x, while B-implantation reduced the wear coefficient by 6.5x or less. The results show that no significant improvement is made in the wear resistance of boron implanted Ti6Al4V by increasing the concentration of boron at the surface from approximately 10% to 43%. Transmission electron microscopy (TEM) and selected area diffraction (SAD) indicated the formation of crystalline TiB in the implanted surface layer. Shallower depth profiles result in reductions of the Ti6Al4V wear coefficient by 6.5x or less which is the same result obtained earlier with the deeper boron depth profile. Surface hardness of Ti6Al4V with shallower boron depth profiles was improved approximately 10% compared to the results previously acquired with deeper boron depth profiles

Synthesis and characterization of boron nitrides nanotubes

International Nuclear Information System (INIS)

Ferreira, T.H.; Sousa, E.M.B.

2010-01-01

This paper presents a new synthesis for the production of boron nitride nanotubes (BNNT) from boron powder, ammonium nitrate and hematite tube furnace CVD method. The samples were subjected to some characterization techniques as infrared spectroscopy, thermal analysis, X-ray diffraction and scanning electron microscopy and transmission. By analyzing the results can explain the chemical reactions involved in the process and confirm the formation of BNNT with several layers and about 30 nanometers in diameter. Due to excellent mechanical properties and its chemical and thermal stability this material is promising for various applications. However, BNNT has received much less attention than carbon nanotubes, it is because of great difficulty to synthesize appreciable quantities from the techniques currently known, and this is one of the main reasons this work.(author)

Boron-Based Catalysts for C-C Bond-Formation Reactions.

Science.gov (United States)

Rao, Bin; Kinjo, Rei

2018-05-02

Because the construction of the C-C bond is one of the most significant reactions in organic chemistry, the development of an efficient strategy has attracted much attention throughout the synthetic community. Among various protocols to form C-C bonds, organoboron compounds are not just limited to stoichiometric reagents, but have also made great achievements as catalysts because of the easy modification of the electronic and steric impacts on the boron center. This review presents recent developments of boron-based catalysts applied in the field of C-C bond-formation reactions, which are classified into four kinds on the basis of the type of boron catalyst: 1) highly Lewis acidic borane, B(C 6 F 5 ) 3 ; 2) organoboron acids, RB(OH) 2 , and their ester derivatives; 3) borenium ions, (R 2 BL)X; and 4) other miscellaneous kinds. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

boron nitride coating of uranium dioxide and uranium dioxide-gadolinium oxide fuels by chemical precipitation method

International Nuclear Information System (INIS)

Uslu, I.; Tanker, E.; Guenduez, G.

1997-01-01

In this research pure urania and urania-gadolinia (5 and 10 %) fuels were coated with boron nitride (BN). This is achieved through chemical vapor deposition (CVD) using boron tricloride BCl 3 ) and ammonia (NH 3 ) at 600 C.Boron tricloride and ammonia are carried to tubular furnace using hydrogen as carrier gas. The coated samples were sintered at 1600 K. The properties of the coated samples were observed using BET surface area analysis, infrared spectra (IR), X-Ray Diffraction and Scanning Electron Microscope (SEM) techniques

Study on boron-film thermal neutron converter prepared by pulsed laser deposition

International Nuclear Information System (INIS)

Song Zifeng; Ye Shuzhen; Chen Ziyu; Song Liao; Shen Ji

2011-01-01

The boron film converter used in the position-sensitive thermal neutron detector is discussed and the method of preparing this converter layer via Pulsed Laser Deposition (PLD) is introduced. The morphology and the composition were studied by Scanning Electron Microscopy (SEM) and X-ray Photoelectron Spectroscopy (XPS). Both boron and boride existed on the layer surface. It was shown that the energy intensity of laser beam and the substrate temperature both had an important influence on the surface morphology of the film.

Study on boron-film thermal neutron converter prepared by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Song Zifeng; Ye Shuzhen; Chen Ziyu; Song Liao [Department of Modern Physics, University of Science and Technology of China, Anhui Hefei 230026 (China); Shen Ji, E-mail: shenji@ustc.edu.c [Department of Modern Physics, University of Science and Technology of China, Anhui Hefei 230026 (China)

2011-02-15

The boron film converter used in the position-sensitive thermal neutron detector is discussed and the method of preparing this converter layer via Pulsed Laser Deposition (PLD) is introduced. The morphology and the composition were studied by Scanning Electron Microscopy (SEM) and X-ray Photoelectron Spectroscopy (XPS). Both boron and boride existed on the layer surface. It was shown that the energy intensity of laser beam and the substrate temperature both had an important influence on the surface morphology of the film.

Application of the boron autoradiography in structural steels

International Nuclear Information System (INIS)

Azevedo, A.L.T. de

1985-01-01

An example of the use of the autoradiographic method for obtaining boron distribution images is described. The technique is based on an emitting nuclear reaction (neutron irradiation), which leaves a latent track in a cellulose film. This detector material is revealed by chemical etching and observed by optical and electron transmission microscopy. (Author) [pt

Simulations of plasma heating caused by the coalescence of multiple current loops in a proton-boron fusion plasma

International Nuclear Information System (INIS)

Haruki, T.; Yousefi, H. R.; Sakai, J.-I.

2010-01-01

Two dimensional particle-in-cell simulations of a dense plasma focus were performed to investigate a plasma heating process caused by the coalescence of multiple current loops in a proton-boron-electron plasma. Recently, it was reported that the electric field produced during the coalescence of two current loops in a proton-boron-electron plasma heats up all plasma species; proton-boron nuclear fusion may therefore be achievable using a dense plasma focus device. Based on this work, the coalescence process for four and eight current loops was investigated. It was found that the return current plays an important role in both the current pinch and the plasma heating. The coalescence of four current loops led to the breakup of the return current from the pinched plasma, resulting in plasma heating. For the coalescence of eight current loops, the plasma was confined by the pinch but the plasma heating was smaller than the two and four loop cases. Therefore the heating associated with current loop coalescence depends on the number of initial current loops. These results are useful for understanding the coalescence of multiple current loops in a proton-boron-electron plasma.

Effect of boron and phosphorus codoping on the electronic and optical properties of graphitic carbon nitride monolayers: First-principle simulations

Science.gov (United States)

Yousefi, Mahdieh; Faraji, Monireh; Asgari, Reza; Moshfegh, Alireza Z.

2018-05-01

We study the effect of boron (B) and phosphorous (P) doping and B/P codoping on electronic and optical properties of graphitic carbon nitride (g-C3N4 or GCN) monolayers using density functional simulations. The energy band structure indicates that the incorporation of both B and P into a hexagonal lattice of GCN reduces the energy band gap from 3.1 for pristine GCN to 1.9 eV, thus extending light absorption toward the visible region. Moreover, on the basis of calculating absorption spectra and dielectric function, the codoped system exhibits an improved absorption intensity in the visible region and more electronic transitions, which named π* electronic transitions that occurred and were prohibited in the pristine GCN. These transitions can be attributed to charge redistribution upon doping, caused by distorted configurable B/P-codoped GCN confirmed by both electron density and Mulliken charge population. Therefore, B/P-codoped GCN is expected to be an auspicious candidate to be used as a promising photoelectrode in photoelectrochemical water splitting reactions leading to efficient solar H2 production.

Acute in vitro and in vivo toxicity of a commercial grade boron nitride nanotube mixture.

Science.gov (United States)

Kodali, Vamsi K; Roberts, Jenny R; Shoeb, Mohammad; Wolfarth, Michael G; Bishop, Lindsey; Eye, Tracy; Barger, Mark; Roach, Katherine A; Friend, Sherri; Schwegler-Berry, Diane; Chen, Bean T; Stefaniak, Aleksandr; Jordan, Kevin C; Whitney, Roy R; Porter, Dale W; Erdely, Aaron D

2017-10-01

Boron nitride nanotubes (BNNTs) are an emerging engineered nanomaterial attracting significant attention due to superior electrical, chemical and thermal properties. Currently, the toxicity profile of this material is largely unknown. Commercial grade BNNTs are composed of a mixture (BNNT-M) of ∼50-60% BNNTs, and ∼40-50% impurities of boron and hexagonal boron nitride. We performed acute in vitro and in vivo studies with commercial grade BNNT-M, dispersed by sonication in vehicle, in comparison to the extensively studied multiwalled carbon nanotube-7 (MWCNT-7). THP-1 wild-type and NLRP3-deficient human monocytic cells were exposed to 0-100 µg/ml and C57BL/6 J male mice were treated with 40 µg of BNNT-M for in vitro and in vivo studies, respectively. In vitro, BNNT-M induced a dose-dependent increase in cytotoxicity and oxidative stress. This was confirmed in vivo following acute exposure increase in bronchoalveolar lavage levels of lactate dehydrogenase, pulmonary polymorphonuclear cell influx, loss in mitochondrial membrane potential and augmented levels of 4-hydroxynonenal. Uptake of this material caused lysosomal destabilization, pyroptosis and inflammasome activation, corroborated by an increase in cathepsin B, caspase 1, increased protein levels of IL-1β and IL-18 both in vitro and in vivo. Attenuation of these effects in NLRP3-deficient THP-1 cells confirmed NLRP3-dependent inflammasome activation by BNNT-M. BNNT-M induced a similar profile of inflammatory pulmonary protein production when compared to MWCNT-7. Functionally, pretreatment with BNNT-M caused suppression in bacterial uptake by THP-1 cells, an effect that was mirrored in challenged alveolar macrophages collected from exposed mice and attenuated with NLRP3 deficiency. Analysis of cytokines secreted by LPS-challenged alveolar macrophages collected after in vivo exposure to dispersions of BNNT-M showed a differential macrophage response. The observed results demonstrated acute

Boronated liposome development and evaluation

International Nuclear Information System (INIS)

Hawthorne, M.F.

1995-01-01

The boronated liposome development and evaluation effort consists of two separate tasks. The first is the development of new boron compounds and the synthesis of known boron species with BNCT potential. These compounds are then encapsulated within liposomes for the second task, biodistribution testing in tumor-bearing mice, which examines the potential for the liposomes and their contents to concentrate boron in cancerous tissues

Boron nutrition and chilling tolerance of warm climate crop species.

Science.gov (United States)

Huang, Longbin; Ye, Zhengqian; Bell, Richard W; Dell, Bernard

2005-10-01

Field observations and glasshouse studies have suggested links between boron (B)-deficiency and leaf damage induced by low temperature in crop plants, but causal relationships between these two stresses at physiological, biochemical and molecular levels have yet to be explored. Limited evidence at the whole-plant level suggests that chilling temperature in the root zone restricts B uptake capacity and/or B distribution/utilization efficiency in the shoot, but the nature of this interaction depends on chilling tolerance of species concerned, the mode of low temperature treatment (abrupt versus gradual temperature decline) and growth conditions (e.g. photon flux density and relative humidity) that may exacerbate chilling stress. This review explores roles of B nutrition in chilling tolerance of continual root or transient shoot chills in crop species adapted to warm season conditions. It reviews current research on combined effects of chilling temperature (ranging from >0 to 20 degrees C) and B deficiency on growth and B nutrition responses in crop species differing in chilling tolerance. For subtropical/tropical species (e.g. cucumber, cassava, sunflower), root chilling at 10-17 degrees C decreases B uptake efficiency and B utilization in the shoot and increases the shoot : root ratio, but chilling-tolerant temperate species (e.g. oilseed rape, wheat) require much lower root chill temperatures (2-5 degrees C) to achieve the same responses. Boron deficiency exacerbates chilling injuries in leaf tissues, particularly under high photon flux density. Suggested mechanisms for B x chilling interactions in plants are: (a) chilling-induced reduction in plasmalemma hydraulic conductivity, membrane fluidity, water channel activity and root pressure, which contribute to the decrease in root hydraulic conductance, water uptake and associated B uptake; (b) chilling-induced stomatal dysfunction affecting B transport from root to shoot and B partitioning in the shoot; and (c) B

Selenium deficiency-induced alterations in ion profiles in chicken muscle.

Directory of Open Access Journals (Sweden)

Haidong Yao

Full Text Available Ion homeostasis plays important roles in development of metabolic diseases. In the present study, we examined the contents and distributions of 25 ions in chicken muscles following treatment with selenium (Se deficiency for 25 days. The results revealed that in chicken muscles, the top ranked microelements were silicon (Si, iron (Fe, zinc (Zn, aluminum (Al, copper (Cu and boron (B, showing low contents that varied from 292.89 ppb to 100.27 ppm. After Se deficiency treatment, essential microelements [Cu, chromium (Cr, vanadium (V and manganese (Mn], and toxic microelements [cadmium (Cd and mercury (Hg] became more concentrated (P < 0.05. Elements distribution images showed generalized accumulation of barium (Ba, cobalt (Co, Cu, Fe and V, while Cr, Mn, and Zn showed pin point accumulations in muscle sections. Thus, the ion profiles were generally influenced by Se deficiency, which suggested a possible role of Se deficiency in muscle dysfunctions caused by these altered ion profiles.

A self-propagation high-temperature synthesis and annealing route to synthesis of wave-like boron nitride nanotubes

Energy Technology Data Exchange (ETDEWEB)

Wang, Jilin; Zhang, Laiping [School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, Hubei, 430073 (China); Gu, Yunle, E-mail: ncm@mail.wit.edu.cn [School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, Hubei, 430073 (China); Pan, Xinye; Zhao, Guowei; Zhang, Zhanhui [School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, Hubei, 430073 (China)

2013-03-15

Highlights: ► Large quantities of wave-like BN nanotubes were synthesized by SHS-annealing method. ► The catalytic boron-containing porous precursor was produced by self-propagation high-temperature synthesis method. ► Three growth models were proposed to explain the growth mechanism of the wave-like BN nanotubes. - Abstract: Large quantities of boron nitride (BN) nanotubes were synthesized by annealing a catalytic boron-containing porous precursor in flowing NH{sub 3} gas at 1180 °C. The porous precursor was prepared by self-propagation high-temperature synthesis (SHS) method at 800 °C using Mg, B{sub 2}O{sub 3} and amorphous boron powder (α-B) as the starting materials. The porous precursor played an important role in large quantities synthesis of BN nanotubes. The as-synthesized product was characterized by X-ray diffractometer (XRD), Fourier transform infrared spectrometer (FTIR), Raman, Scanning electron microscopy (SEM), X-ray energy dispersive spectroscopy (EDS), Transmission electron microscopy (TEM) and High-resolution transmission electron microscopy (HRTEM). Characterization results indicated that the BN nanotubes displayed wave-like inner structures with diameters in the range of 50–300 nm and average lengths of more than 10 μm. The possible growth mechanism of the BN nanotubes was also discussed.

Biodistribution, toxicity and efficacy of a boronated porphyrin for boron neutron capture therapy

International Nuclear Information System (INIS)

Miura, Michiko; Micca, P.; Fairchild, R.; Slatkin, D.; Gabel, D.

1992-01-01

Boron-containing porphyrins may be useful for boron neutron capture therapy (BNCT) in the treatment of brain tumors. Porphyrins have been shown to accumulate in tumor tissue and to be essentially excluded from normal brain. However, problems of toxicity may prevent some boron-containing porphyrins from being considered for BNCT. The authors have synthesized the boronated porphyrin 2,4-bis-vinyl-o-nidocarboranyl-deuteroporphyrin IX (VCDP). Preliminary studies in tumor-bearing mice showed considerable uptake of boron at a total dose of 150 μg/gbw with low mortality. They now report that a total dose to mice of ∼ 275 μg VCDP/gbw administered in multiple intraperitoneal (ip) injections can provide 40-50μg B per gram of tumor with acceptable toxicity. Toxicity experiments and a preliminary trial of BNCT in mice given such doses are also reported

The influence of boron dopant on the electrochemical properties of graphene as an electrode material and a support for Pt catalysts

International Nuclear Information System (INIS)

Bo, Xiangjie; Li, Mian; Han, Ce; Guo, Liping

2013-01-01

Highlights: •More defective sites in graphene after the doping of boron atoms. •Fine dispersion of Pt nanoparticles supported on boron-doped graphene. •Low electron transfer resistance at boron-doped graphene. •High performance of boron-doped graphene as an electrode material or a support for Pt catalysts. -- Abstract: Boron-doped graphene (BGR) is prepared by thermal annealing of graphene oxide (GO) in the presence of boric acid. More defective sites are introduced into GR accompanied by the doping of boron. Low electron transfer resistance towards redox probe is observed at BGR. The BGR modified electrode can effectively distinguish the anodic peaks for ascorbic acid (AA), dopamine (DA), and uric acid (UA). The defective sites of BGR can also act as anchoring sites for the deposition of Pt nanoparticles. When used as a support for Pt electrocatalysts, Pt nanoparticles with an average diameter of 3.2 nm are deposited on BGR. The doping of boron into GR facilitates the dispersion of Pt nanoparticles and increases the utilization efficiency of Pt nanoparticles. The Pt/BGR exhibits significant catalytic activity towards the oxidation of methanol. The results demonstrate that BGR is a good support for Pt catalysts or an electrode material compared with the undoped GR

Boron nitride coated uranium dioxide and uranium dioxide-gadolinium oxide fuels

Energy Technology Data Exchange (ETDEWEB)

Gunduz, G [Department of Chemical Engineering, Middle East Technical Univ., Ankara (Turkey); Uslu, I; Tore, C; Tanker, E [Turkiye Atom Enerjisi Kurumu, Ankara (Turkey)

1997-08-01

Pure Urania and Urania-gadolinia (5 and 10%) fuels were produced by sol-gel technique. The sintered fuel pellets were then coated with boron nitride (BN). This is achieved through chemical vapor deposition (CVD) using boron trichloride and ammonia. The coated samples were sintered at 1600 K. The analyses under scanning electron microscope (SEM) showed a variety of BN structures, mainly platelike and rodlike structures were observed. Burnup calculations by using WIMSD4 showed that BN coated and gadolinia containing fuels have larger burnups than other fuels. The calculations were repeated at different pitch distances. The change of the radius of the fuel pellet or the moderator/fuel ratio showed that BN coated fuel gives the highest burnups at the present design values of a PWR. Key words: burnable absorber, boron nitride, gadolinia, CVT, nuclear fuel. (author). 32 refs, 14 figs.

Boron nitride coated uranium dioxide and uranium dioxide-gadolinium oxide fuels

International Nuclear Information System (INIS)

Gunduz, G.; Uslu, I.; Tore, C.; Tanker, E.

1997-01-01

Pure Urania and Urania-gadolinia (5 and 10%) fuels were produced by sol-gel technique. The sintered fuel pellets were then coated with boron nitride (BN). This is achieved through chemical vapor deposition (CVD) using boron trichloride and ammonia. The coated samples were sintered at 1600 K. The analyses under scanning electron microscope (SEM) showed a variety of BN structures, mainly platelike and rodlike structures were observed. Burnup calculations by using WIMSD4 showed that BN coated and gadolinia containing fuels have larger burnups than other fuels. The calculations were repeated at different pitch distances. The change of the radius of the fuel pellet or the moderator/fuel ratio showed that BN coated fuel gives the highest burnups at the present design values of a PWR. Key words: burnable absorber, boron nitride, gadolinia, CVT, nuclear fuel. (author). 32 refs, 14 figs

Microstructure and spectroscopy studies on cubic boron nitride synthesized under high-pressure conditions

Energy Technology Data Exchange (ETDEWEB)

Nistor, L C [National Institute for Materials Physics, Bucharest (Romania); Nistor, S V [National Institute for Materials Physics, Bucharest (Romania); Dinca, G [Dacia Synthetic Diamonds Factory, Bucharest (Romania); Georgeoni, P [Dacia Synthetic Diamonds Factory, Bucharest (Romania); Landuyt, J van [University of Antwerpen - RUCA, EMAT, Antwerpen (Belgium); Manfredotti, C [Experimental Physics Department, University of Turin, Turin (Italy); Vittone, E [Experimental Physics Department, University of Turin, Turin (Italy)

2002-11-11

High-resolution electron microscopy (HREM) studies of the microstructure and specific defects in hexagonal boron nitride (h-BN) precursors and cubic boron nitride (c-BN) crystals made under high-pressure high-temperature conditions revealed the presence of half-nanotubes at the edges of the h-BN particles. Their sp{sup 3} bonding tendency could strongly influence the nucleation rates of c-BN. The atomic resolution at extended dislocations was insufficient to allow us to determine the stacking fault energy in the c-BN crystals. Its mean value of 191 pm, 15 mJ m{sup -2} is of the same order of magnitude as that of diamond. High-frequency (94 GHz) electron paramagnetic resonance studies on c-BN single crystals have produced new data on the D1 centres associated with the boron species. Ion-beam-induced luminescence measurements have indicated that c-BN is a very interesting luminescent material, which is characterized by four luminescence bands and exhibits a better resistance to ionizing radiation than CVD diamond.

A New Boron Analysis Method

Energy Technology Data Exchange (ETDEWEB)

Weitman, J; Daaverhoeg, N; Farvolden, S

1970-07-01

In connection with fast neutron (n, {alpha}) cross section measurements a novel boron analysis method has been developed. The boron concentration is inferred from the mass spectrometrically determined number of helium atoms produced in the thermal and epithermal B-10 (n, {alpha}) reaction. The relation between helium amount and boron concentration is given, including corrections for self shielding effects and background levels. Direct and diffusion losses of helium are calculated and losses due to gettering, adsorption and HF-ionization in the release stage are discussed. A series of boron determinations is described and the results are compared with those obtained by other methods, showing excellent agreement. The lower limit of boron concentration which can be measured varies with type of sample. In e.g. steel, concentrations below 10-5 % boron in samples of 0.1-1 gram may be determined.

Two-channel neutron boron meter

International Nuclear Information System (INIS)

Chen Yongqing; Yin Guowei; Chai Songshan; Deng Zhaoping; Zhou Bin

1993-09-01

The two-channel neutron boron meter is a continuous on-line measuring device to measure boron concentration of primary cooling liquid of reactors. The neutron-leakage-compensation method is taken in the measuring mechanism. In the primary measuring configuration, the mini-boron-water annulus and two-channel and central calibration loop are adopted. The calibration ring and constant-temperature of boron-water can be remotely controlled by secondary instruments. With the microcomputer data processing system the boron concentration is automatically measured and calibrated in on-line mode. The meter has many advantages such as high accuracy, fast response, multi-applications, high reliability and convenience

Effects of boron on the fracture behavior and ductility of cast Ti–6Al–4V alloys

International Nuclear Information System (INIS)

Luan, J.H.; Jiao, Z.B.; Heatherly, L.; George, E.P.; Chen, G.; Liu, C.T.

2015-01-01

Minor amounts of boron additions have been found to greatly enhance the ductility of cast Ti–6Al–4V alloys, which was considered to be due to the grain-size refinement. In this paper, we report our interesting finding that the beneficial effect of boron on the ductility of the cast titanium alloys is due not only to the grain-size refinement but the enhancement of the prior-β grain-boundary cohesion by boron segregation at the grain boundaries, as evidenced by Auger electron microscopy

Adsorption modes of molecular iodine on defected boron nitrides: A DFT study

Science.gov (United States)

Arabieh, Masoud; Azar, Yavar Taghipour

2018-03-01

The interaction of molecular iodine with pristine and monovacant boron-nitride quantum dots (QDs) have been investigated using density functional theory. It was found that removing one B or N single atom significantly decreased the calculated Eg values at various exchange functional. In B-defected BN system, the localized spin densities canceled each other and overall polarization of system was found to be equal to unity. For N-defected system there was smaller spin densities localized on each closest B atoms. Both B- and N-vacancies caused appearance of new states in gap region. Our calculation revealed that spin density and polarization of defected system are localized on vacancy region and other atoms did not take part in this polarization. The results of electron localization function for N-DBN showed there was high density region at the position of removed nitrogen atom. The calculated adsorption energies implied that there was no significant chemical interaction between iodine molecule and pristine BN sheet. We suggested that when a deficiency was imposed to the BN sheet, the reactivity of the modified system toward iodine molecule significantly could increase. We found strong interaction between iodine and nitrogen atoms of B-DBN system. In the case of I2/N-DBN system the neighbor atoms had no contribution in spin polarization of the system and it seemed that all spin density of system transferred to the iodine molecule after adsorption. Strong correlation between molecular iodine orientation and BN-QDs via their interactions type has been clarified in this work. These findings may provide a deeper insight into halogen molecules interactions with low dimensional defected boron nitrides.

Lattice vibrations in α-boron

International Nuclear Information System (INIS)

Richter, W.

1976-01-01

α-rhombohedral boron is the simplest boron modification, with only 12 atoms per unit cell. The boron atoms are arranged in B 12 icosahedra, which are centered at the lattice points of a primitive rhombohedral lattice. The icosahedra are slightly deformed, as the five-fold symmetry of the ideal icosahedron is incompatible with any crystal structure. The lattice dynamics of α-boron are discussed in terms of the model developed by Weber and Thorpe. (Auth.)

Metal-free spin and spin-gapless semiconducting heterobilayers: monolayer boron carbonitrides on hexagonal boron nitride.

Science.gov (United States)

Pan, Hongzhe; Zhang, Hongyu; Sun, Yuanyuan; Ding, Yingchun; Chen, Jie; Du, Youwei; Tang, Nujiang

2017-06-07

The interfaces between monolayer boron carbonitrides and hexagonal boron nitride (h-BN) play an important role in their practical applications. Herein, we respectively investigate the structural and electronic properties of two metal-free heterobilayers constructed by vertically stacking two-dimensional (2D) spintronic materials (B 4 CN 3 and B 3 CN 4 ) on a h-BN monolayer from the viewpoints of lattice match and lattice mismatch models using density functional calculations. It is found that both B 4 CN 3 and B 3 CN 4 monolayers can be stably adsorbed on the h-BN monolayer due to the van der Waals interactions. Intriguingly, we demonstrate that the bipolar magnetic semiconductor (BMS) behavior of the B 4 CN 3 layer and the spin gapless semiconductor (SGS) property of the B 3 CN 4 layer can be well preserved in the B 4 CN 3 /BN and B 3 CN 4 /BN heterobilayers, respectively. The magnetic moments and spintronic properties of the two systems originate mainly from the 2p z electrons of the carbon atoms in the B 4 CN 3 and B 3 CN 4 layers. Furthermore, the BMS behavior of the B 4 CN 3 /BN bilayer is very robust while the electronic property of the B 3 CN 4 /BN bilayer is sensitive to interlayer couplings. These theoretical results are helpful both in understanding the interlayer coupling between B 4 CN 3 or B 3 CN 4 and h-BN monolayers and in providing a possibility of fabricating 2D composite B 4 CN 3 /BN and B 3 CN 4 /BN metal-free spintronic materials theoretically.

Boron Fullerenes: A First-Principles Study

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Gonzalez Szwacki Nevill

2007-01-01

Full Text Available AbstractA family of unusually stable boron cages was identified and examined using first-principles local-density functional method. The structure of the fullerenes is similar to that of the B12icosahedron and consists of six crossing double-rings. The energetically most stable fullerene is made up of 180 boron atoms. A connection between the fullerene family and its precursors, boron sheets, is made. We show that the most stable boron sheets are not necessarily precursors of very stable boron cages. Our finding is a step forward in the understanding of the structure of the recently produced boron nanotubes.

Thermally conductive, dielectric PCM-boron nitride nanosheet composites for efficient electronic system thermal management.

Science.gov (United States)

Yang, Zhi; Zhou, Lihui; Luo, Wei; Wan, Jiayu; Dai, Jiaqi; Han, Xiaogang; Fu, Kun; Henderson, Doug; Yang, Bao; Hu, Liangbing

2016-11-24

Phase change materials (PCMs) possessing ideal properties, such as superior mass specific heat of fusion, low cost, light weight, excellent thermal stability as well as isothermal phase change behavior, have drawn considerable attention for thermal management systems. Currently, the low thermal conductivity of PCMs (usually less than 1 W mK -1 ) greatly limits their heat dissipation performance in thermal management applications. Hexagonal boron nitride (h-BN) is a two-dimensional material known for its excellent thermally conductive and electrically insulating properties, which make it a promising candidate to be used in electronic systems for thermal management. In this work, a composite, consisting of h-BN nanosheets (BNNSs) and commercialized paraffin wax was developed, which inherits high thermally conductive and electrically insulating properties from BNNSs and substantial heat of fusion from paraffin wax. With the help of BNNSs, the thermal conductivity of wax-BNNS composites reaches 3.47 W mK -1 , which exhibits a 12-time enhancement compared to that of pristine wax (0.29 W mK -1 ). Moreover, an 11.3-13.3 MV m -1 breakdown voltage of wax-BNNS composites was achieved, which shows further improved electrical insulating properties. Simultaneously enhanced thermally conductive and electrically insulating properties of wax-BNNS composites demonstrate their promising application for thermal management in electronic systems.

Boron Doped diamond films as electron donors in photovoltaics: An X-ray absorption and hard X-ray photoemission study

Energy Technology Data Exchange (ETDEWEB)

Kapilashrami, M.; Zegkinoglou, I. [Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Physics, University of Wisconsin Madison, Madison, Wisconsin 53706 (United States); Conti, G.; Nemšák, S.; Conlon, C. S.; Fadley, C. S. [Department of Physics, University of California, Davis, California 95616 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Törndahl, T.; Fjällström, V. [Ångström Solar Center, Uppsala University, Box 534, SE-751 21 Uppsala (Sweden); Lischner, J. [Department of Physics, University of California, Berkeley, California 94720 (United States); Louie, Steven G. [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Physics, University of California, Berkeley, California 94720 (United States); Hamers, R. J.; Zhang, L. [Department of Chemistry, University of Wisconsin Madison, Madison, Wisconsin 53706 (United States); Guo, J.-H. [Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Himpsel, F. J., E-mail: fhimpsel@wisc.edu [Department of Physics, University of Wisconsin Madison, Madison, Wisconsin 53706 (United States)

2014-10-14

Highly boron-doped diamond films are investigated for their potential as transparent electron donors in solar cells. Specifically, the valence band offset between a diamond film (as electron donor) and Cu(In,Ga)Se₂ (CIGS) as light absorber is determined by a combination of soft X-ray absorption spectroscopy and hard X-ray photoelectron spectroscopy, which is more depth-penetrating than standard soft X-ray photoelectron spectroscopy. In addition, a theoretical analysis of the valence band is performed, based on GW quasiparticle band calculations. The valence band offset is found to be small: VBO=VBM{sub CIGS} – VBM{sub diamond}=0.3 eV±0.1 eV at the CIGS/Diamond interface and 0.0 eV±0.1 eV from CIGS to bulk diamond. These results provide a promising starting point for optimizing the band offset by choosing absorber materials with a slightly lower valence band maximum.

Boron-containing thioureas for neutron capture therapy

International Nuclear Information System (INIS)

Ketz, H.

1993-01-01

Melanin is produced in large amounts in malignant melanotic melanomas. Because thiourea compounds are covalently incorporated into melanin during its biosynthesis, the preparation of boronated thiourea-derivatives is of particular interest for the BNCT (Boron Neutron Capture Therapy). Accumulation of boron in tumors by means of boronated thiourea-derivatives may therefore provide levels of 10 B which are useful for BNCT. In BNCT the tumor containing the boron compound is irradiated with epithermal neutrons to generate He- and Li-nuclei from the 10 B which can then destroy the tumor cells. Because of the short ranges of these particles (approximately one cell diameter) the damage will be almost exclusively confined to the tumor leaving normal tissue unharmed. High accumulation of 2-mercapto-1-methylimidazole (methimazole) in melanotic melanomas has been described in the literature. Boronated derivatives of methimazole were therefore synthesized. Boron was in the form of a boronic acid, a nido-carbonate and a mercaptoundeca hydro-closo-dodecaborate (BSH). The synthesis of the boron cluster derivatives of methimazole (nido-carborate- and BSH-derivatives) with 9 resp. 12 boron atoms in the molecule were expected to achieve higher concentrations of boron in the tumor than in the case of the boronic acid compound with its single boron atom. (orig.) [de

Correction: Electronic structure of the boron fullerene B14 and its silicon derivatives B13Si+, B13Si- and B12Si2: a rationalization using a cylinder model.

Science.gov (United States)

Van Duong, Long; Nguyen, Minh Tho

2016-08-28

Correction for 'Electronic structure of the boron fullerene B 14 and its silicon derivatives B 13 Si + , B 13 Si - and B 12 Si 2 : a rationalization using a cylinder model' by Long Van Duong et al., Phys. Chem. Chem. Phys., 2016, 18, 17619-17626.

The conflicting roles of boron on the radiation response of precipitate-forming austenitic alloys

International Nuclear Information System (INIS)

Okita, T.; Sekimura, N.; Garner, F.

2007-01-01

Full text of publication follows: Boron is often a deliberately added solute to improve the radiation resistance of austenitic structural alloys, with boron exerting its greatest influence on carbide precipitation. However, boron also a source of helium via transmutation and therefore tends to accelerate the onset of void nucleation. These conflicting contributions of boron with respect to radiation resistance are not easily separated, but are sometimes utilized to mimic fusion-relevant gas generation rates when testing in surrogate fission spectra. In an earlier study the authors demonstrated that in simple model ternary alloys that boron additions tended to homogenize swelling somewhat via increased helium generation but not to exert any significant influence on the total swelling. In these easily swelling alloys void nucleation was not significantly influenced by additional helium or by boron's chemical effect, with boron remaining primarily in solution. In the current study, Fe-15Cr-16Ni-0.25 Ti-0.05C alloys with four levels of natural boron addition (0, 100, 500, 2500 appm) were irradiated side-by-side at ∼400 deg. C in the Fast Flux Test Facility under active temperature control in the Materials Open Test Assembly. Although three sets of irradiation conditions were explored, the boron variation was the only variable operating in each data set. The bulk swelling was measured using an immersion density technique and electron microscopy was employed to determine the details of void, dislocation and precipitate microstructure. It was found that by 100 appm B the strongest and most immediate effect of boron was to reduce swelling at all irradiation conditions explored, but the boron-induced increases in overall helium content were rather small over the 0-100 appm B range. This indicates that boron's primary effect was chemical in nature, expressed via its effect on precipitation. As the boron level was progressively increased, however, there was a reversal in

Boron supplementation in broiler diets

Directory of Open Access Journals (Sweden)

EJ Fassani

2004-12-01

Full Text Available Boron supplementation in broiler feed is not a routine practice. However, some reports suggest a positive effect of boron on performance. This study assessed the effects of boron supplementation on broiler performance. Diets were based on maize and soybean meal, using boric acid P.A. as boron source. Six supplementation levels (0, 30, 60, 90, 120 and 150 ppm were evaluated using 1,440 one-day old males housed at a density of 30 chickens in each of 48 experimental plots of 3m². A completely randomized block design was used with 8 replicates. Feed intake, weight gain and feed conversion were assessed in the periods from 1 to 7 days, 1 to 21 days and 1 to 42 days of age, and viability was evaluated for the total 42-day rearing period. No performance variable was affected by boron supplementation (p>0.05 in the period from 1 to 7 days. The regression analysis indicated an ideal level of 37.4 ppm of boron for weight gain from 1 to 21 days (p0.05, although feed intake was reduced linearly with increased boron levels (p0.05. Ash and calcium percentages in the tibias of broilers and viability in the total rearing period were not affected by boron supplementation (p>0.05.

Theoretical Study of Energy Levels and Transition Probabilities of Boron Atom

Science.gov (United States)

Tian Yi, Zhang; Neng Wu, Zheng

2009-08-01

Full Text PDF Though the electrons configuration for boron atom is simple and boron atom has long been of interest for many researchers, the theoretical studies for properties of BI are not systematic, there are only few results reported on energy levels of high excited states of boron, and transition measurements are generally restricted to transitions involving ground states and low excited states without considering fine structure effects, provided only multiplet results, values for transitions between high excited states are seldom performed. In this article, by using the scheme of the weakest bound electron potential model theory calculations for energy levels of five series are performed and with the same method we give the transition probabilities between excited states with considering fine structure effects. The comprehensive set of calculations attempted in this paper could be of some value to workers in the field because of the lack of published calculations for the BI systems. The perturbations coming from foreign perturbers are taken into account in studying the energy levels. Good agreement between our results and the accepted values taken from NIST has been obtained. We also reported some values of energy levels and transition probabilities not existing on the NIST data bases.

Boron and Coumaphos Residues in Hive Materials Following Treatments for the Control of Aethina tumida Murray.

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Cesar Valdovinos-Flores

Full Text Available In the search of alternatives for controlling Aethina tumida Murray, we recently proposed the BAA trap which uses boric acid and an attractant which mimics the process of fermentation caused by Kodamaea ohmeri in the hive. This yeast is excreted in the feces of A. tumida causing the fermentation of pollen and honey of infested hives and releasing compounds that function as aggregation pheromones to A. tumida. Since the boron is the toxic element in boric acid, the aim of this article is to assess the amount of boron residues in honey and beeswax from hives treated with the BAA trap. For this aim, the amount of bioaccumulated boron in products of untreated hives was first determined and then compared with the amount of boron of products from hives treated with the BAA trap in two distinct climatic and soil conditions. The study was conducted in the cities of Padilla, Tamaulipas, and Valladolid, Yucatan (Mexico from August 2014 to March 2015. The quantity of boron in honey was significantly less in Yucatan than in Tamaulipas; this agrees with the boron deficiency among Luvisol and Leptosol soils found in Yucatan compared to the Vertisol soil found in Tamaulipas. In fact, the honey from Yucatan has lower boron levels than those reported in the literature. The BAA treatment was applied for four months, results show that the BAA trap does not have any residual effect in either honey or wax; i.e., there is no significant difference in boron content before and after treatment. On the other hand, the organophosphate pesticide coumaphos was found in 100% of wax samples and in 64% of honey samples collected from Yucatan. The concentration of coumaphos in honey ranges from 0.005 to 0.040 mg/kg, which are below Maximum Residue Limit (MRL allowed in the European Union (0.1 mg/kg but 7.14% of samples exceeded the MRL allowed in Canada (0.02 mg/kg.

Boron and Coumaphos Residues in Hive Materials Following Treatments for the Control of Aethina tumida Murray

Science.gov (United States)

Valdovinos-Flores, Cesar; Gaspar-Ramírez, Octavio; Heras–Ramírez, María Elena; Dorantes-Ugalde, José Antonio; Saldaña-Loza, Luz María

2016-01-01

In the search of alternatives for controlling Aethina tumida Murray, we recently proposed the BAA trap which uses boric acid and an attractant which mimics the process of fermentation caused by Kodamaea ohmeri in the hive. This yeast is excreted in the feces of A. tumida causing the fermentation of pollen and honey of infested hives and releasing compounds that function as aggregation pheromones to A. tumida. Since the boron is the toxic element in boric acid, the aim of this article is to assess the amount of boron residues in honey and beeswax from hives treated with the BAA trap. For this aim, the amount of bioaccumulated boron in products of untreated hives was first determined and then compared with the amount of boron of products from hives treated with the BAA trap in two distinct climatic and soil conditions. The study was conducted in the cities of Padilla, Tamaulipas, and Valladolid, Yucatan (Mexico) from August 2014 to March 2015. The quantity of boron in honey was significantly less in Yucatan than in Tamaulipas; this agrees with the boron deficiency among Luvisol and Leptosol soils found in Yucatan compared to the Vertisol soil found in Tamaulipas. In fact, the honey from Yucatan has lower boron levels than those reported in the literature. The BAA treatment was applied for four months, results show that the BAA trap does not have any residual effect in either honey or wax; i.e., there is no significant difference in boron content before and after treatment. On the other hand, the organophosphate pesticide coumaphos was found in 100% of wax samples and in 64% of honey samples collected from Yucatan. The concentration of coumaphos in honey ranges from 0.005 to 0.040 mg/kg, which are below Maximum Residue Limit (MRL) allowed in the European Union (0.1 mg/kg) but 7.14% of samples exceeded the MRL allowed in Canada (0.02 mg/kg). PMID:27092938

Surface modification of EN-C35E steels by thermo-chemical boronizing process and its properties

International Nuclear Information System (INIS)

Yapar, U.; Arisoy, C.F.; Basman, G.; Yesilcubuk, S.A.; Sesen, M.K.

2004-01-01

Boronizing, which involves diffusion of boron atoms into steel substrate to form hard iron borides is well known diffusion coating technique. In this study, salt bath boronizing processes were performed on EN-C35E steel substrate in slurry salt bath containing borax, boric acid as boron sources and ferro-silicon as reductant. The process was performed at 850 and 950 C for 2, 4, 6 and 8 hours. Boride layers were examined by optical microscope (OM), scanning electron microscope (SEM) and X-ray diffraction (XRD). Hardness of borides formed on the steel substrate was measured by knoop indenter under load of 0.5N. Metallographic studies and XRD analysis revealed that single-type Fe 2 B layers were formed. Depending on boronizing time and temperature, it has found that the hardness of boride layer ranged from 1895-2143 HK 0.05 that is nearly 8 times higher than substrate hardness. The thickness of the layer ranged from 25 to 167 μm depending on boronizing time and temperature. (orig.)

High resolution imaging of boron carbide microstructures

International Nuclear Information System (INIS)

MacKinnon, I.D.R.; Aselage, T.; Van Deusen, S.B.

1986-01-01

Two samples of boron carbide have been examined using high resolution transmission electron microscopy (HRTEM). A hot-pressed B 13 C 2 sample shows a high density of variable width twins normal to (10*1). Subtle shifts or offsets of lattice fringes along the twin plane and normal to approx.(10*5) were also observed. A B 4 C powder showed little evidence of stacking disorder in crystalline regions

Boron nitride elastic and thermal properties. Irradiation effects

International Nuclear Information System (INIS)

Jager, Bernard.

1977-01-01

The anisotropy of boron nitride (BN) and especially thermal and elastic properties were studied. Specific heat and thermal conductivity between 1.2 and 300K, thermal conductivity between 4 and 350K and elastic constants C 33 and C 44 were measured. BN was irradiated with electrons at 77K and with neutrons at 27K to determine properties after irradiation [fr

XPS analysis for cubic boron nitride crystal synthesized under high pressure and high temperature using Li3N as catalysis

International Nuclear Information System (INIS)

Guo, Xiaofei; Xu, Bin; Zhang, Wen; Cai, Zhichao; Wen, Zhenxing

2014-01-01

Highlights: • The cBN was synthesized by Li 3 N as catalyst under high pressure and high temperature (HPHT). • The film coated on the as-grown cBN crystals was studied by XPS. • The electronic structure variation in the film was investigated. • The growth mechanism of cubic boron nitride crystal was analyzed briefly. - Abstract: Cubic boron nitride (cBN) single crystals are synthesized with lithium nitride (Li3N) as catalyst under high pressure and high temperature. The variation of electronic structures from boron nitride of different layers in coating film on the cBN single crystal has been investigated by X-ray photoelectron spectroscopy. Combining the atomic concentration analysis, it was shown that from the film/cBN crystal interface to the inner, the sp 2 fractions are decreasing, and the sp 3 fractions are increasing in the film at the same time. Moreover, by transmission electron microscopy, a lot of cBN microparticles are found in the interface. For there is no Li 3 N in the film, it is possible that Li 3 N first reacts with hexagonal boron nitride to produce Li 3 BN 2 during cBN crystals synthesis under high pressure and high temperature (HPHT). Boron and nitrogen atoms, required for cBN crystals growth, could come from the direct conversion from hexagonal boron nitride with the catalysis of Li 3 BN 2 under high pressure and high temperature, but not directly from the decomposition of Li 3 BN 2

Radiochemical studies of neutron deficient actinide isotopes

Energy Technology Data Exchange (ETDEWEB)

Williams, K.E.

1978-04-01

The production of neutron deficient actinide isotopes in heavy ion reactions was studied using alpha, gamma, x-ray, and spontaneous fission detection systems. A new isotope of berkelium, /sup 242/Bk, was produced with a cross-section of approximately 10 ..mu..b in reactions of boron on uranium and nitrogen on thorium. It decays by electron capture with a half-life of 7.0 +- 1.3 minutes. The alpha-branching ratio for this isotope is less than 1% and the spontaneous fission ratio is less than 0.03%. Studies of (Heavy Ion, pxn) and (Heavy Ion, ..cap alpha..xn) transfer reactions in comparison with (Heavy ion, xn) compound nucleus reactions revealed transfer reaction cross-sections equal to or greater than the compound nucleus yields. The data show that in some cases the yield of an isotope produced via a (H.I.,pxn) or (H.I.,..cap alpha..xn) reaction may be higher than its production via an xn compound nucleus reaction. These results have dire consequences for proponents of the ''Z/sub 1/ + Z/sub 2/ = Z/sub 1+2/'' philosophy. It is no longer acceptable to assume that (H.I.,pxn) and (H.I.,..cap alpha..xn) product yields are of no consequence when studying compound nucleus reactions. No evidence for spontaneous fission decay of /sup 228/Pu, /sup 230/Pu, /sup 232/Cm, or /sup 238/Cf was observed indicating that strictly empirical extrapolations of spontaneous fission half-life data is inadequate for predictions of half-lives for unknown neutron deficient actinide isotopes.

Room-temperature near-infrared electroluminescence from boron-diffused silicon pn junction diodes

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Si eLi

2015-02-01

Full Text Available Silicon pn junction diodes with different doping concentrations were prepared by boron diffusion into Czochralski (CZ n-type silicon substrate. Their room-temperature near-infrared electroluminescence (EL was measured. In the EL spectra of the heavily boron doped diode, a luminescence peak at ~1.6 m (0.78 eV was observed besides the band-to-band line (~1.1eV under the condition of high current injection, while in that of the lightly boron doped diode only the band-to-band line was observed. The intensity of peak at 0.78 eV increases exponentially with current injection with no observable saturation at room temperature. Furthermore, no dislocations were found in the cross-sectional transmission electron microscopy image, and no dislocation-related luminescence was observed in the low-temperature photoluminescence spectra. We deduce the 0.78 eV emission originates from the irradiative recombination in the strain region of diodes caused by the diffusion of large number of boron atoms into silicon crystal lattice.

Nuclear magnetic resonance spectroscopy of boron compounds containing two-, three- and four-coordinate boron

International Nuclear Information System (INIS)

Wrackmeyer, B.

1988-01-01

The influence of boron chemistry on various areas of research in inorganic, organic and theoretical chemistry is well documented. In fact, many models presently employed to describe chemical bonding in general can be traced to attempts to understand bonding in boranes. The confirmation of many theoretical predictions in boron chemistry relies on direct and indirect structural information provided by various physical methods that - fortunately - became available almost at the same rate as that with which the interest in boron compounds was growing. Clearly, there has always been a strong link between the interest in synthesis and the application of physical methods. As in many other areas of chemistry, developments in boron chemistry have been greatly accelerated by NMR. 11 B NMR has been at the center of interest from the beginning, accompanied by routine 1 H NMR measurements, and occasional 14 N, 19 F and 31 P NMR work. In the last 12 years, we have seen an increasing number of 13 C NMR studies of boron compounds. The availability of multinuclear facilities for PFT NMR spectrometers stimulates the measurement of the NMR spectra of other nuclei, like 29 Si, 119 Sn or other metals, in order to obtain additional information. This paper is intended to serve several purposes: to update previous reviews on 11 B NMR of boron compounds, to demonstrate some applications of multinuclear NMR to boron chemistry; to attempt to incorporate new NMR parameters into the known data set; and to summarize the experimental facts required for obtaining the maximum information from NMR studies on boron compounds

The effect of boron additions on irradiation-induced order changes in Ni3Al intermetallic compounds

International Nuclear Information System (INIS)

Njah, N.; Gilbon, D.; Dimitrov, O.

1995-01-01

The effects of boron additions (0.1 wt%) on the kinetics of atomic order changes in a Ni 76 Al 24 intermetallic compound, under 1 MeV electron irradiation, were investigated at temperatures of 293 K and 410 K and displacement rates of 0.09 x 10 -3 to 4.7 x 10 -3 dpa.s -1 . In these irradiation conditions, a state of residual order was obtained for long irradiation times, characterized by a steady state order parameter S∞; it corresponds to a competition between two opposite features: irradiation disordering and thermal reordering enhanced by irradiation. Boron additions did not affect the efficiency of irradiation-induced disordering: the disordering cross-section (or, equivalently, the number of replacements per displacement var-epsilon) were comparable with and without a boron addition. By contrast, the S∞ values at 293 K were much lower in the alloy containing boron. Since boron does not change the disordering rate, the large difference between the values obtained in undoped and in boron-doped alloys shows that the reordering rate is strongly reduced by the presence of boron. Thus, boron modifies the mobility of the defects responsible for the irradiation-enhanced diffusion. The data on dislocation-loop size and the reordering kinetics suggest that vacancies are trapped by boron at low temperatures and immobilized, probably by the formation of a boron-vacancy complex. The effect becomes weaker at higher displacement rates and higher temperatures, probably due to the boron-vacancy complexes becoming unstable. It is proposed that two different reordering mechanisms may be operative at 293 K, according to the presence of boron: reordering is promoted by vacancy migration in the Ni 76 Al 24 alloy, whereas in the Ni 76 Al 24 (0.1 wt%B) alloy, it is promoted by the migration of split-interstitials or/and of low-mobility vacancy-boron complexes

Effect of Boron on the Strength and Toughness of Direct-Quenched Low-Carbon Niobium Bearing Ultra-High-Strength Martensitic Steel

Science.gov (United States)

Hannula, Jaakko; Kömi, Jukka; Porter, David A.; Somani, Mahesh C.; Kaijalainen, Antti; Suikkanen, Pasi; Yang, Jer-Ren; Tsai, Shao-Pu

2017-11-01

The effect of boron on the microstructures and mechanical properties of laboratory-control-rolled and direct-quenched 6-mm-thick steels containing 0.08 wt pct C and 0.02 wt pct Nb were studied. The boron contents were 24 ppm and a residual amount of 4 ppm. Two different finish rolling temperatures (FRTs) of 1093 K and 1193 K (820 °C and 920 °C) were used in the hot rolling trials to obtain different levels of pancaked austenite prior to DQ. Continuous cooling transformation (CCT) diagrams were constructed to reveal the effect of boron on the transformation behavior of these steels. Microstructural characterization was carried out using various microscopy techniques, such as light optical microscopy (LOM) and scanning electron microscopy-electron backscatter diffraction (SEM-EBSD). The resultant microstructures after hot rolling were mixtures of autotempered martensite and lower bainite (LB), having yield strengths in the range 918 to 1067 MPa with total elongations to fracture higher than 10 pct. The lower FRT of 1093 K (820 °C) produced better combinations of strength and toughness as a consequence of a higher degree of pancaking in the austenite. Removal of boron lowered the 34 J/cm2 Charpy-V impact toughness transition temperature from 206 K to 158 K (-67 °C to -115 °C) when the finishing rolling temperature of 1093 K (820 °C) was used without any loss in the strength values compared to the boron-bearing steel. This was due to the finer and more uniform grain structure in the boron-free steel. Contrary to expectations, the difference was not caused by the formation of borocarbide precipitates, as verified by transmission electron microscopy (TEM) investigations, but through the grain coarsening effect of boron.

APCVD hexagonal boron nitride thin films for passive near-junction thermal management of electronics

Science.gov (United States)

KC, Pratik; Rai, Amit; Ashton, Taylor S.; Moore, Arden L.

2017-12-01

The ability of graphene to serve as an ultrathin heat spreader has been previously demonstrated with impressive results. However, graphene is electrically conductive, making its use in contact with electronic devices problematic from a reliability and integration perspective. As an alternative, hexagonal boron nitride (h-BN) is a similarly structured material with large in-plane thermal conductivity but which possesses a wide band gap, thereby giving it potential to be utilized for directing contact, near-junction thermal management of electronics without shorting or the need for an insulating intermediate layer. In this work, the viability of using large area, continuous h-BN thin films as direct contact, near-junction heat spreaders for electronic devices is experimentally evaluated. Thin films of h-BN several square millimeters in size were synthesized via an atmospheric pressure chemical vapor deposition (APCVD) method that is both simple and scalable. These were subsequently transferred onto a microfabricated test device that simulated a multigate transistor while also allowing for measurements of the device temperature at various locations via precision resistance thermometry. Results showed that these large-area h-BN films with thicknesses of 77-125 nm are indeed capable of significantly lowering microdevice temperatures, with the best sample showing the presence of the h-BN thin film reduced the effective thermal resistance by 15.9% ± 4.6% compared to a bare microdevice at the same power density. Finally, finite element simulations of these experiments were utilized to estimate the thermal conductivity of the h-BN thin films and identify means by which further heat spreading performance gains could be attained.

Cell cycle dependence of boron uptake in various boron compounds used for neutron capture therapy

International Nuclear Information System (INIS)

Yoshida, F.; Matsumura, A.; Shibata, Y.; Yamamoto, T.; Nose, T.; Okumura, M.

2000-01-01

In neutron capture therapy, it is important that the tumor take boron in selectively. Furthermore, it is ideal when the uptake is equal in each tumor cell. Some indirect proof of differences in boron uptake among neoplastic cell cycles has been documented. However, no investigation has yet measured boron uptake directly. Using flow cytometry, in the present study cells were sorted by G0/G1 phase and G2/M phase, and the boron concentration of each fraction was measured with inductively coupled plasma-atomic emission spectroscopy (ICP-AES). The results were that BSH (sodiumborocaptate) and BPA (p-boronophenylalanine) had higher rates of boron uptake in the G2/M group than in the G0/G1 group. However, in BPA the difference was more prominent, which revealed a 2.2-3.3 times higher uptake of boron in the G2/M group than in the G0/G1 group. (author)

Nanodiamonds for device applications: An investigation of the properties of boron-doped detonation nanodiamonds.

Science.gov (United States)

Afandi, Abdulkareem; Howkins, Ashley; Boyd, Ian W; Jackman, Richard B

2018-02-19

The inclusion of boron within nanodiamonds to create semiconducting properties would create a new class of applications in the field of nanodiamond electronics. Theoretical studies have differed in their conclusions as to whether nm-scale NDs would support a stable substitutional boron state, or whether such a state would be unstable, with boron instead aggregating or attaching to edge structures. In the present study detonation-derived NDs with purposefully added boron during the detonation process have been studied with a wide range of experimental techniques. The DNDs are of ~4 nm in size, and have been studied with CL, PL, Raman and IR spectroscopies, AFM and HR-TEM and electrically measured with impedance spectroscopy; it is apparent that the B-DNDs studied here do indeed support substitutional boron species and hence will be acting as semiconducting diamond nanoparticles. Evidence for moderate doping levels in some particles (~10 17 B cm -3 ), is found alongside the observation that some particles are heavily doped (~10 20 B cm -3 ) and likely to be quasi-metallic in character. The current study has therefore shown that substitutional boron doping in nm NDs is in fact possible, opening-up the path to a whole host of new applications for this interesting class of nano-particles.

Boron Doped diamond films as electron donors in photovoltaics: An X-ray absorption and hard X-ray photoemission study

International Nuclear Information System (INIS)

Kapilashrami, M.; Zegkinoglou, I.; Conti, G.; Nemšák, S.; Conlon, C. S.; Fadley, C. S.; Törndahl, T.; Fjällström, V.; Lischner, J.; Louie, Steven G.; Hamers, R. J.; Zhang, L.; Guo, J.-H.; Himpsel, F. J.

2014-01-01

Highly boron-doped diamond films are investigated for their potential as transparent electron donors in solar cells. Specifically, the valence band offset between a diamond film (as electron donor) and Cu(In,Ga)Se 2 (CIGS) as light absorber is determined by a combination of soft X-ray absorption spectroscopy and hard X-ray photoelectron spectroscopy, which is more depth-penetrating than standard soft X-ray photoelectron spectroscopy. In addition, a theoretical analysis of the valence band is performed, based on GW quasiparticle band calculations. The valence band offset is found to be small: VBO = VBM CIGS – VBM diamond  = 0.3 eV ± 0.1 eV at the CIGS/Diamond interface and 0.0 eV ± 0.1 eV from CIGS to bulk diamond. These results provide a promising starting point for optimizing the band offset by choosing absorber materials with a slightly lower valence band maximum.

Boron-Loaded Silicone Rubber Scintillators

Energy Technology Data Exchange (ETDEWEB)

Bell, Z.W.; Maya, L.; Brown, G.M.; Sloop, F.V.Jr

2003-05-12

Silicone rubber received attention as an alternative to polyvinyltoluene in applications in which the scintillator is exposed to high doses because of the increased resistance of the rubber to the formation of blue-absorbing color centers. Work by Bowen, et al., and Harmon, et al., demonstrated their properties under gamma/x-ray irradiation, and Bell, et al. have shown their response to thermal neutrons. This last work, however, provided an example of a silicone in which both the boron and the scintillator were contained in the rubber as solutes, a formulation which led to the precipitation of solids and sublimation of the boron component. In the present work we describe a scintillator in which the boron is chemically bonded to the siloxane and so avoids the problem of precipitation and loss of boron to sublimation. Material containing up to 18% boron, by weight, was prepared, mounted on photomultipliers, and exposed to both neutron and gamma fluxes. Pulse height spectra showing the neutron and photon response were obtained, and although the light output was found to be much poorer than from samples in which boron was dissolved, the higher boron concentrations enabled essentially 100% neutron absorption in only a few millimeters' thickness of rubber.

A system to deposit boron films (boronization) in the DIII-D tokamak

International Nuclear Information System (INIS)

Hodapp, T.R.; Jackson, G.L.; Phillips, J.; Holtrop, K.L.; Peterson, P.L.; Winters, J.

1992-01-01

A system has been added to the DIII-D tokamak to coat its plasma facing surfaces with a film of boron using diborane gas. The system includes special health and safety equipment for handling the diborane gas which is toxic and inflammable. The purpose f the boron film is to reduce the levels of impurity atoms in the DIII-D plasmas. Experiments following the application of the boron film in DIII-D have led to significant reductions in plasma impurity levels and the observation of a new, very high confinement regime

Investigation of boron extraction process with aid magnesium hydroxide from mother liquor of boron production

International Nuclear Information System (INIS)

Balapanova, B.S.; Zhajmina, R.E.; Serazetdinov, D.Z.

1988-01-01

Conditions of boron - magnesium concentrate preparation from mother liquor by coprecipitation of borate - ions by magnesium hydroxide are investigated. It is shown that boron - magnesium concentrate and products of its heat treatment at 100 - 500 deg C in water are dissolved partially, and in ammonium citrate - practically completely. Suppositions are made on the composition of the product prepared, on the the structure of its crystal lattice and the processes taking place in it during heat treatment. The conclusion is made on the perspectiveness of processing of mother liquor of boron industry for boron - magnesium concentrate

Synthesis of nano-sized amorphous boron powders through active dilution self-propagating high-temperature synthesis method

Energy Technology Data Exchange (ETDEWEB)

Wang, Jilin [The State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Gu, Yunle [School of Material Science and Engineering, Wuhan Institute of Technology, Wuhan 430073 (China); Li, Zili [The State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Wang, Weimin, E-mail: wangwm@hotmail.com [The State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Fu, Zhengyi [The State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China)

2013-06-01

Graphical abstract: Nano-sized amorphous boron powders were synthesized by active dilution self-propagating high-temperature synthesis (SHS) method. The effects of endothermic reaction rate, the possible chemical reaction mechanism and active dilution model for synthesis of the product were also discussed. Highlights: ► Nano-sized amorphous boron powders were synthesized by active dilution self-propagating high-temperature synthesis method. ► The morphology, particle size and purity of the samples could be effectively controlled via changing the endothermic rate. ► The diluter KBH{sub 4} played an important role in active dilution synthesis of amorphous nano-sized boron powders. ► The active dilution method could be further popularized and become a common approach to prepare various inorganic materials. - Abstract: Nano-sized amorphous boron powders were synthesized by active dilution self-propagating high-temperature synthesis (SHS) method at temperatures ranging from 700 °C to 850 °C in a SHS furnace using Mg, B{sub 2}O{sub 3} and KBH{sub 4} as raw materials. Samples were characterized by X-ray powder diffraction (XRD), Laser particle size analyzer, Fourier transform infrared spectra (FTIR), X-ray energy dispersive spectroscopy (EDX), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high-resolution transmission TEM (HRTEM). The boron powders demonstrated an average particle size of 50 nm with a purity of 95.64 wt.%. The diluter KBH{sub 4} played an important role in the active dilution synthesis of amorphous nano-sized boron powders. The effects of endothermic reaction rate, the possible chemical reaction mechanism and active dilution model for synthesis of the product were also discussed.

Synthesis of nano-sized amorphous boron powders through active dilution self-propagating high-temperature synthesis method

International Nuclear Information System (INIS)

Wang, Jilin; Gu, Yunle; Li, Zili; Wang, Weimin; Fu, Zhengyi

2013-01-01

Graphical abstract: Nano-sized amorphous boron powders were synthesized by active dilution self-propagating high-temperature synthesis (SHS) method. The effects of endothermic reaction rate, the possible chemical reaction mechanism and active dilution model for synthesis of the product were also discussed. Highlights: ► Nano-sized amorphous boron powders were synthesized by active dilution self-propagating high-temperature synthesis method. ► The morphology, particle size and purity of the samples could be effectively controlled via changing the endothermic rate. ► The diluter KBH 4 played an important role in active dilution synthesis of amorphous nano-sized boron powders. ► The active dilution method could be further popularized and become a common approach to prepare various inorganic materials. - Abstract: Nano-sized amorphous boron powders were synthesized by active dilution self-propagating high-temperature synthesis (SHS) method at temperatures ranging from 700 °C to 850 °C in a SHS furnace using Mg, B 2 O 3 and KBH 4 as raw materials. Samples were characterized by X-ray powder diffraction (XRD), Laser particle size analyzer, Fourier transform infrared spectra (FTIR), X-ray energy dispersive spectroscopy (EDX), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high-resolution transmission TEM (HRTEM). The boron powders demonstrated an average particle size of 50 nm with a purity of 95.64 wt.%. The diluter KBH 4 played an important role in the active dilution synthesis of amorphous nano-sized boron powders. The effects of endothermic reaction rate, the possible chemical reaction mechanism and active dilution model for synthesis of the product were also discussed

An empirical model for parameters affecting energy consumption in boron removal from boron-containing wastewaters by electrocoagulation.

Science.gov (United States)

Yilmaz, A Erdem; Boncukcuoğlu, Recep; Kocakerim, M Muhtar

2007-06-01

In this study, it was investigated parameters affecting energy consumption in boron removal from boron containing wastewaters prepared synthetically, via electrocoagulation method. The solution pH, initial boron concentration, dose of supporting electrolyte, current density and temperature of solution were selected as experimental parameters affecting energy consumption. The obtained experimental results showed that boron removal efficiency reached up to 99% under optimum conditions, in which solution pH was 8.0, current density 6.0 mA/cm(2), initial boron concentration 100mg/L and solution temperature 293 K. The current density was an important parameter affecting energy consumption too. High current density applied to electrocoagulation cell increased energy consumption. Increasing solution temperature caused to decrease energy consumption that high temperature decreased potential applied under constant current density. That increasing initial boron concentration and dose of supporting electrolyte caused to increase specific conductivity of solution decreased energy consumption. As a result, it was seen that energy consumption for boron removal via electrocoagulation method could be minimized at optimum conditions. An empirical model was predicted by statistically. Experimentally obtained values were fitted with values predicted from empirical model being as following; [formula in text]. Unfortunately, the conditions obtained for optimum boron removal were not the conditions obtained for minimum energy consumption. It was determined that support electrolyte must be used for increase boron removal and decrease electrical energy consumption.

Characterization of boron tolerant bacteria isolated from a fly ash dumping site for bacterial boron remediation.

Science.gov (United States)

Edward Raja, Chellaiah; Omine, Kiyoshi

2013-08-01

Boron is an essential micronutrient for plants, but can above certain concentrations be toxic to living organisms. A major environmental concern is the removal of boron from contaminated water and fly ash. For this purpose, the samples were collected from a fly ash dumping site, Nagasaki prefecture, Japan. The chemical characteristics and heavy metal concentration of the samples were performed by X-ray fluorescent analysis and leaching test. For bacterial analysis, samples were collected in sterile plastic sheets and isolation was carried out by serial dilution method. The boron tolerant isolates that showed values of maximum inhibitory concentration toward boron ranging from 100 to 260 mM level were screened. Based on 16S rRNA sequencing and phylogenetic analysis, the isolates were most closely related to the genera Bacillus, Lysinibacillus, Microbacterium and Ralstonia. The boron tolerance of these strains was also associated with resistant to several heavy metals, such as As (III), Cr (VI), Cd, Cu, Pb, Ni, Se (III) and Zn. Indeed, these strains were arsenic oxidizing bacteria confirmed by silver nitrate test. These strains exhibited their salt resistances ranging from 4 to 15 % were determined in Trypticase soy agar medium. The boron tolerant strains were capable of removing 0.1-2.0 and 2.7-3.7 mg l(-1) boron from the medium and fly ash at 168 h. Thus, we have successfully identified the boron tolerant and removal bacteria from a fly ash dumping site for boron remediation.

Investigation of the Microstructure of Laser-Arc Hybrid Welded Boron Steel

Science.gov (United States)

Son, Seungwoo; Lee, Young Ho; Choi, Dong-Won; Cho, Kuk-Rae; Shin, Seung Man; Lee, Youngseog; Kang, Seong-Hoon; Lee, Zonghoon

2018-05-01

The microstructure of boron steel for automotive driving shaft manufacturing after laser-arc hybrid welding was investigated. Laser-arc hybrid welding technology was applied to 3-mm-thick plates of boron steel, ST35MnB. The temperature distribution of the welding pool was analyzed using the finite element method, and the microstructure of the welded boron steel was characterized using optical microscopy and scanning and transmission electron microscopies. The microstructure of the weld joint was classified into the fusion zone, the heat-affected zone (HAZ), and the base material. At the fusion zone, the bainite grains exist in the martensite matrix and show directionality because of heat input from the welding. The HAZ is composed of smaller grains, and the hardness of the HAZ is greater than that of the fusion zone. We discuss that the measured grain size and the hardness of the HAZ originate from undissolved precipitates that retard the grain growth of austenite.

Manganese catalyzed cis-dihydroxylation of electron deficient alkenes with H(2)O(2).

Science.gov (United States)

Saisaha, Pattama; Pijper, Dirk; van Summeren, Ruben P; Hoen, Rob; Smit, Christian; de Boer, Johannes W; Hage, Ronald; Alsters, Paul L; Feringa, Ben L; Browne, Wesley R

2010-10-07

A practical method for the multigram scale selective cis-dihydroxylation of electron deficient alkenes such as diethyl fumarate and N-alkyl and N-aryl-maleimides using H(2)O(2) is described. High turnovers (>1000) can be achieved with this efficient manganese based catalyst system, prepared in situ from a manganese salt, pyridine-2-carboxylic acid, a ketone and a base, under ambient conditions. Under optimized conditions, for diethyl fumarate at least 1000 turnovers could be achieved with only 1.5 equiv. of H(2)O(2) with d/l-diethyl tartrate (cis-diol product) as the sole product. For electron rich alkenes, such as cis-cyclooctene, this catalyst provides for efficient epoxidation.

Oxidative Olefination of Anilides with Unactivated Alkenes Catalyzed by an (Electron-Deficient η(5) -Cyclopentadienyl)Rhodium(III) Complex Under Ambient Conditions.

Science.gov (United States)

Takahama, Yuji; Shibata, Yu; Tanaka, Ken

2015-06-15

The oxidative olefination of sp(2) C-H bonds of anilides with both activated and unactivated alkenes using an (electron-deficient η(5) -cyclopentadienyl)rhodium(III) complex is reported. In contrast to reactions using this electron-deficient rhodium(III) catalyst, [Cp*RhCl2 ]2 showed no activity against olefination with unactivated alkenes. In addition, the deuterium kinetic isotope effect (DKIE) study revealed that the C-H bond cleavage step is thought to be the turnover-limiting step. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Pulverization of boron element and proportions of boron carbide in boron; Broyage de bore element et dosage de carbure de bore dans le bore

Energy Technology Data Exchange (ETDEWEB)

Lang, F M; Finck, C [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

1956-07-01

It is possible to reduce boron element into fine powder by means of a mortar and pestle made of sintered boron carbide, the ratio of boron carbide introduced being less than one per cent. Boron element at our disposal is made of sharp edged, dark brown, little grains of average size greater than 5 {mu}. Grain sizes smaller than 1{mu} are required for applying thin layers of such boron. (author) [French] Il est possible de pulveriser finement du bore element au moyen de mortier et pilon en carbure de bore fritte, le taux de carbure de bore introduit etant inferieur a 1 pour cent. Le bore element dont nous disposons est constitue de petits grains brun fonce, a aretes vives, de dimension moyenne superieure a 5 {mu}. L'application de ce bore en couches minces demande des grains de dimensions inferieures a 1 {mu}. (aute0008.

Boron uptake measurements in a rat model for Boron Neutron Capture Therapy of lung tumours

Energy Technology Data Exchange (ETDEWEB)

Bortolussi, S., E-mail: silva.bortolussi@pv.infn.i [Department of Nuclear and Theoretical Physics, University of Pavia, via Bassi 6, 27100 Pavia (Italy); National Institute of Nuclear Physics (INFN), Section of Pavia, via Bassi 6, 27100 Pavia (Italy); Bakeine, J.G. [Department of Nuclear and Theoretical Physics, University of Pavia, via Bassi 6, 27100 Pavia (Italy); Ballarini, F. [Department of Nuclear and Theoretical Physics, University of Pavia, via Bassi 6, 27100 Pavia (Italy); National Institute of Nuclear Physics (INFN), Section of Pavia, via Bassi 6, 27100 Pavia (Italy); Bruschi, P. [Department of Nuclear and Theoretical Physics, University of Pavia, via Bassi 6, 27100 Pavia (Italy); Gadan, M.A. [Department of Nuclear and Theoretical Physics, University of Pavia, via Bassi 6, 27100 Pavia (Italy); Comision Nacional de Energia Atomica, Buenos Aires (Argentina); Protti, N.; Stella, S. [Department of Nuclear and Theoretical Physics, University of Pavia, via Bassi 6, 27100 Pavia (Italy); National Institute of Nuclear Physics (INFN), Section of Pavia, via Bassi 6, 27100 Pavia (Italy); Clerici, A.; Ferrari, C.; Cansolino, L.; Zonta, C.; Zonta, A. [Department of Surgery, University of Pavia, via Ferrata 27100 Pavia (Italy); Nano, R. [Department of Animal Biology, University of Pavia, via Ferrata 27100 Pavia (Italy); Altieri, S. [Department of Nuclear and Theoretical Physics, University of Pavia, via Bassi 6, 27100 Pavia (Italy); National Institute of Nuclear Physics (INFN), Section of Pavia, via Bassi 6, 27100 Pavia (Italy)

2011-02-15

Lung carcinoma is the leading cause of cancer mortality in the Western countries. Despite the introduction over the last few years of new therapeutic agents, survival from lung cancer has shown no discernible improvement in the last 20 years. For these reasons any efforts to find and validate new effective therapeutic procedures for lung cancer are very timely. The selective boron uptake in the tumour with respect to healthy tissues makes Boron Neutron Capture Therapy a potentially advantageous option in the treatment of tumours that affect whole vital organs, and that are surgically inoperable. To study the possibility of applying BNCT to the treatment of diffuse pulmonary tumours, an animal model for boron uptake measurements in lung metastases was developed. Both healthy and tumour-bearing rats were infused with Boronophenylalanine (BPA) and sacrificed at different time intervals after drug administration. The lungs were extracted, and prepared for boron analysis by neutron autoradiography and {alpha}-spectroscopy. The boron concentrations in tumour and normal lung were plotted as a function of the time elapsed after BPA administration. The concentration in tumour is almost constant within the error bars for all the time intervals of the experiment (1-8 h), while the curve in normal lung decreases after 4 h from BPA infusion. At 4 h, the ratio of boron concentration in tumour to boron concentration in healthy lung is higher than 3, and it stays above this level up to 8 h. Also the images of boron distribution in the samples, obtained by neutron autoradiography, show a selective absorption in the metastases.

Laser-induced photochemical enrichment of boron isotopes

International Nuclear Information System (INIS)

Freund, S.M.; Ritter, J.J.

1976-01-01

A boron trichloride starting material containing both boron-10 isotopes and boron-11 isotopes is selectively enriched in one or the other of these isotopes by a laser-induced photochemical method involving the reaction of laser-excited boron trichloride with either H 2 S or D 2 S. The method is carried out by subjecting a low pressure gaseous mixture of boron trichloride starting material and the sulfide to infrared radiation from a carbon dioxide TE laser. The wave length of the radiation is selected so as to selectively excite one or the other of boron-10 BCl 3 molecules or boron-11 BCl 3 molecules, thereby making them preferentially more reactive with the sulfide. The laser-induced reaction produces both a boron-containing solid phase reaction product and a gaseous phase containing mostly unreacted BCl 3 and small amounts of sulfhydroboranes. Pure boron trichloride selectively enriched in one of the isotopes is recovered as the primary product of the method from the gaseous phase by a multi-step recovery procedure. Pure boron trichloride enriched in the other isotope is recovered as a secondary product of the method by the subsequent chlorination of the solid phase reaction product followed by separation of BCl 3 from the mixture of gaseous products resulting from the chlorination

A system to deposit boron films (boronization) in the DIII-D tokamak

International Nuclear Information System (INIS)

Hodapp, T.R.; Jackson, G.L.; Phillips, J.; Holtrop, K.L.; Petersen, P.I.; Winter, J.

1991-09-01

A system has been added to the D3-D tokamak to coat its plasma facing surfaces with a film of boron using diborane gas. The system includes special health and safety equipment for handling the diborane gas which is toxic and inflammable. The purpose of the boron film is to reduce the levels of impurity atoms in the D3-D plasmas. Experiments following the application of the boron film in D3-D have led to significant reductions in plasma impurity levels and the observation of a new, very high confinement regime. 9 refs., 1 fig

Boron neutron capture therapy. Synthesis of boronated amines- and DNA intercalating agents for potential use in cancer therapy

International Nuclear Information System (INIS)

Ghaneolhosseini, H.

1998-01-01

Boron Neutron Capture Therapy is a binary cancer treatment modality, involving the delivery of a suitable boron compound to tumour cells followed by irradiation of the tumour by thermal neutrons. Boronated agents can selectively be delivered to tumour cells either directly with tumour-specific boron compounds, or by use of targeting strategies. However, the efficacy of this method would increase if the boron agents are localised in the cell nucleus rather than in the cell cytoplasm when neutron irradiation takes place. With these considerations in mind, some boronated DNA intercalating/interacting agents such as phenanthridine- acridine- spermidine- and naphthalimide derivatives were synthesised. Aminoalkyl-o-carboranes were synthesised in order to be used both for coupling to macromolecules and also for halogenation of their corresponding nido-derivatives. The amino groups were introduced using the Gabriel reagent N, N-dibenzyl iminodicarboxylate to provide 1-(aminomethyl)- and 1-(2-aminoethyl)-o-carboranes. The first attempt to achieve the possibility to accumulate a higher concentration of boron atoms in the cell nucleus was to synthesize carboranyl phenanthridinium analogues by reacting a p- or o-carboranyl moiety with phenanthridine, a chromophore with a planar aromatic ring system as DNA intercalator. Boronated acridine-spermidine, boronated diacridine, and boronated dispermidine were obtained in order to increase water solubility to avoid the interaction of these agents with non-DNA sides of the cell, especially membranes; and to enhance the feasibility of a higher DNA-binding constant and also decrease the DNA-drug dissociation rate. Finally, the synthesis of a boronated naphthalimide derivative was carried out by nucleophilic reaction of a primary aminoalkyl-p-carborane with naphthalic anhydride. Biological evaluations on DNA-binding, toxicity, and cellular binding with carboranyl phenanthridinium analogues, boronated acridine- and spermidine are described

Boron effect on the microstructure of 9% Cr ferritic–martensitic steels

International Nuclear Information System (INIS)

Klimenkov, M.; Materna-Morris, E.; Möslang, A.

2015-01-01

Highlights: • Detailed TEM characterization of BN, M 23 C 6 , VN and TaC precipitates in B-alloyed EUROFER97. • Determination of B content influence on density and composition of M 23 C 6 and MX precipitates and herewith on microstructure. • α-Al 2 O 3 –BN–TaC–VN precipitation sequence of different phases during cooling was proposed. • Decreasing of thermal stability of microstructure with boron content was measured. - Abstract: The microstructure of reduces-activation 9Cr–WTaV steel alloyed with 83 and 1160 wt. ppm 10 B was detailed analysed using transmission electron microscopy. The influence of boron content on the precipitation behaviour of M 23 C 6 and MX (VN and TaC) phases and, hence, on the formation process of steel’s grain and lath structure was studied. VN precipitates, which play an important role in the stabilisation of the lath structure, exhibit most sensitive reaction on presence of boron. Their spatial density significantly reduces in the alloy with 83 ppm boron. In the steel with 1160 wt. ppm boron, no formation of VN was detected, whereas TaC particles precipitate at the lath and grain boundaries. These changes in the structure stabilisation mechanism lead to an increasing lath width and a decreasing thermal stability of laths and grains. Analytical investigations of several BN particles reveal their complex multi-phase structure and allow conclusions to be drawn with respect to their precipitation sequence

The role of the substrate in the high energy boron implantation damage recovering

International Nuclear Information System (INIS)

Mica, I.; Di Piazza, L.; Laurin, L.; Mariani, M.; Mauri, A.G.; Polignano, M.L.; Ricci, E.; Sammiceli, F.; Spoldi, G.

2009-01-01

In this work the role of the Si substrate in the high energy boron implantation damage recovering is studied. The boron implants were carried out in Czochralski grown (1 0 0) polished Si substrates as well as in epitaxial Si layers grown on (1 0 0) Si by chemical vapor deposition. The boron implantation dose was 2 x 10 14 cm -2 and the implantation energy was 600 keV. The recovery annealing was a furnace annealing at 1000 deg. C for 40 min. The defects formed by high energy boron implantation have been observed with transmission electron microscopy (TEM). In order to increase the statistics some junctions were formed on the buried p-well and electrically characterized. For the epitaxial wafers it was found that the number and the size of the dislocations change according to the doping of the substrate. For the Czochralski wafers it was found that the morphology and the size of the dislocations change according to the presence of the wafer pre-annealing (whether conventional furnace annealing or Magic Denuded Zone process).

Green Synthesis of Boron Carbonitride with High Capacitance

Directory of Open Access Journals (Sweden)

Dongping Chen

2018-03-01

Full Text Available Boron carbonitrides (BCN have attracted great interest in superhard or energy storage materials. In this work, thin BCN sheets were synthesized at 250 °C by a facile and green solvothermal method. The structure and morphology were characterized by X-ray diffraction (XRD, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS, scanning electron microscopy (SEM, and transmission electron microscopy (TEM. Based on the results of electrochemical experiments, the thin BCN sheet exhibited excellent capacitance performance (343.1 F/g at a current density of 0.5 A/g and cycling stability (90%, which showed high potential applications in supercapacitors.

Hot flow behavior of boron microalloyed steels

International Nuclear Information System (INIS)

Lopez-Chipres, E.; Mejia, I.; Maldonado, C.; Bedolla-Jacuinde, A.; El-Wahabi, M.; Cabrera, J.M.

2008-01-01

This research work studies the effect of boron contents on the hot flow behavior of boron microalloyed steels. For this purpose, uniaxial hot-compression tests were carried out in a low carbon steel microalloyed with four different amounts of boron over a wide range of temperatures (950, 1000, 1050 and 1100 deg. C) and constant true strain rates (10 -3 , 10 -2 and 10 -1 s -1 ). Experimental results revealed that both peak stress and peak strain tend to decrease as boron content increases, which indicates that boron additions have a solid solution softening effect. Likewise, the flow curves show a delaying effect on the kinetics of dynamic recrystallization (DRX) when increasing boron content. Deformed microstructures show a finer austenitic grain size in the steel with higher boron content (grain refinement effect). Results are discussed in terms of boron segregation towards austenitic grain boundaries during plastic deformation, which increases the movement of dislocations, enhances the grain boundary cohesion and modificates the grain boundary structure

Meeting the challenge of homogenous boron targeting of heterogeneous tumors for effective boron neutron capture therapy (BNCT)

International Nuclear Information System (INIS)

Heber, Elisa M.; Trivillin, Veronica A.; Itoiz, Maria E.; Rebagliati, J. Raul; Batistoni, Daniel; Kreimann, Erica L.; Schwint, Amanda E.; Nigg, David W.; Gonzalez, Beatriz N.

2006-01-01

BNCT is a tumor cell targeted radiation therapy. Inadequately boron targeted tumor populations jeopardize tumor control. Meeting the to date unresolved challenge of homogeneous targeting of heterogeneous tumors with effective boron carriers would contribute to therapeutic efficacy. The aim of the present study was to evaluate the degree of variation in boron content delivered by boronophenylalanine (BPA), GB-10 (Na 2 10 B 10 H 10 ) and the combined administration of (BPA+GB-10) in different portions of tumor, precancerous tissue around tumor and normal pouch tissue in the hamster cheek pouch oral cancer model. Boron content was evaluated by ICP-AES. The degree of homogeneity in boron targeting was assessed in terms of the coefficient of variation ([S.D./Mean]x100) of boron values. Statistical analysis of the results was performed by one-way ANOVA and the least significant difference test. GB-10 and GB-10 plus BPA achieved respectively a statistically significant 1.8-fold and 3.3-fold increase in targeting homogeneity over BPA. The combined boron compound administration protocol contributes to homogeneous targeting of heterogeneous tumors and would increase therapeutic efficacy of BNCT by exposing all tumor populations to neutron capture reactions in boron. (author)

Determination of boron in graphite, boron carbide and glass by ICP-MS, ICP-OES and conventional wet chemical methods

International Nuclear Information System (INIS)

Venkatesh, K.; Kamble, Granthali S.; Venkatesh, Manisha; Kumar, Sanjukta A.; Reddy, A.V.R.

2014-01-01

Boron is an important element of interest in nuclear reactor materials due to its high neutron absorption cross section (σ 0 =3837 barns for 10 B). In the present paper, R and D work and routinely used methods have been described for the analysis of case samples (1) Graphite where boron is present at trace levels, (2) Boron Carbide having boron concentration of about 80% and (3) Glass containing 4-6 % boron. (author)

Boron removal from geothermal waters by electrocoagulation

Energy Technology Data Exchange (ETDEWEB)

Yilmaz, A. Erdem [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering., 25240 Erzurum (Turkey)], E-mail: aerdemy@atauni.edu.tr; Boncukcuoglu, Recep [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering., 25240 Erzurum (Turkey); Kocakerim, M. Muhtar [Atatuerk University, Faculty of Engineering, Department of Chemical Engineering, 25240 Erzurum (Turkey); Yilmaz, M. Tolga; Paluluoglu, Cihan [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering., 25240 Erzurum (Turkey)

2008-05-01

Most of the geothermal waters in Turkey contain extremely high concentration of boron when they are used for irrigation. The use of geothermal waters for irrigation can results in excess amount deposition of boron in soil. On the other hand, a minimal boron concentration is required for irrigational waters. In this study, electrocoagulation (EC) was selected as a treatment process for the removal of boron from thermal waters obtained from Ilica-Erzurum in Turkey. Current density (CD), pH of solution and temperature of solution were selected as operational parameters. The results showed that boron removal efficiency increased from pH 4.0 to 8.0 and decreased at pH 10.0. Although boron removal efficiency was highest at pH 8.0, energy consumption was very high at this pH value compared to other pH intervals. Boron removal efficiency reached to 95% with increasing current density from 1.5 to 6.0 mA/cm{sup 2}, but energy consumption was also increased in this interval. At higher temperatures of solution, such as 313 and 333 K, boron removal efficiency increased. At optimum conditions, boron removal efficiency in geothermal water reached up to 95%.

Boron removal from geothermal waters by electrocoagulation

International Nuclear Information System (INIS)

Yilmaz, A. Erdem; Boncukcuoglu, Recep; Kocakerim, M. Muhtar; Yilmaz, M. Tolga; Paluluoglu, Cihan

2008-01-01

Most of the geothermal waters in Turkey contain extremely high concentration of boron when they are used for irrigation. The use of geothermal waters for irrigation can results in excess amount deposition of boron in soil. On the other hand, a minimal boron concentration is required for irrigational waters. In this study, electrocoagulation (EC) was selected as a treatment process for the removal of boron from thermal waters obtained from Ilica-Erzurum in Turkey. Current density (CD), pH of solution and temperature of solution were selected as operational parameters. The results showed that boron removal efficiency increased from pH 4.0 to 8.0 and decreased at pH 10.0. Although boron removal efficiency was highest at pH 8.0, energy consumption was very high at this pH value compared to other pH intervals. Boron removal efficiency reached to 95% with increasing current density from 1.5 to 6.0 mA/cm 2 , but energy consumption was also increased in this interval. At higher temperatures of solution, such as 313 and 333 K, boron removal efficiency increased. At optimum conditions, boron removal efficiency in geothermal water reached up to 95%

Removal of boron (B) from waste liquors.

Science.gov (United States)

Jiang, J Q; Xu, Y; Simon, J; Quill, K; Shettle, K

2006-01-01

This paper explores the use of electrocoagulation to remove boron from waste effluent in comparison with alum coagulation. In treating model test wastes, greater boron removals were achieved with electrocoagulation at low doses than conventional alum coagulation when reaction was undertaken for the same conditions (pH 8.5, and initial boron concentration was 500 mg/L). Al electrocoagulation can achieve good boron removal performance (68.3%) at a dose of 2.1 (as molar ratio of Al:B, and for current density of 62.1 A/m2), while alum coagulation can only achieve the maximum boron removal of 56% at a dose of 2.4. Also, Al electrocoagulation can remove 15-20% more boron than alum coagulation for the same dose compared in the treatment of both model test wastes and industry effluent. The estimation of running costs shows that to achieve 75% boron removal from industry waste effluent, i.e. removing 150 g of boron from 1 m3 of effluent, electrocoagulation was 6.2 times cheaper than alum coagulation. The economic advantage of electrocoagulation in the treatment of boron-containing waste effluent is thus significant.

Contributions to the chemistry of Boron, 112

International Nuclear Information System (INIS)

Goetze, R.; Noeth, H.

1980-01-01

Several methods were used to prepare a series of boron substituted 1, 3, 2-dithiaborols. The NMR data of this new class of compounds indicate in comparison to 1, 3, 2-dithiaborolanes, that the heterocycle can be looked at as a 6 π-electron system. A high degree of analogy in the mass spectrometric fragmentation of dithiaborolanes and dithiaborols exists, however, the parent ion of 2-methyl dithiaborol is more stable than that of the saturated analogon. (orig.)

One-pot synthesis of biocompatible boronic acid-functionalized poly(methyl methacrylate) nanoparticles at sub-100 nm scale for glucose sensing

Energy Technology Data Exchange (ETDEWEB)

Sakalak, Huseyin [Selcuk University, Metallurgy and Materials Engineering (Turkey); Ulasan, Mehmet; Yavuz, Emine [Selcuk University, Advanced Technology Research and Application Center (Turkey); Camli, Sevket Tolga, E-mail: tolgacamli@gmail.com [Biyotez Machinery Chemistry R& D Co. Ltd. (Turkey); Yavuz, Mustafa Selman, E-mail: selmanyavuz@selcuk.edu.tr [Selcuk University, Metallurgy and Materials Engineering (Turkey)

2014-12-15

Poly(methyl methacrylate) nanoparticles containing 4-vinylphenyl boronic acid were synthesized in one pot by surfactant-free emulsion polymerization. The nanoparticles were characterized by scanning electron microscopy and dynamic light scattering. Boron content in the nanoparticles was confirmed by electron-dispersive X-ray spectroscopy. In polymerization process, several co-monomer ratios were studied in order to obtain optimum nanoparticle size. Average hydrodynamic diameter and polydispersity index of nanoparticles versus variation of acetone percentage in the solvent mixture and total monomer concentration were investigated. The effect of boronic acid concentration in the monomer mixture on nanoparticle size and size distribution was also reported. Without further functionalization to the nanoparticles, the catechol dye, alizarin red S, was bound to boronic acid-containing nanoparticles. These nanoparticles behave as a nanosensor by which glucose or fructose can be easily detected. Dye-containing nanoparticles were undertaken displacement reaction by glucose or fructose. The glucose or fructose content was also monitored by UV–Visible spectrophotometer. Furthermore, cytotoxicity studies of boronic acid-carrying poly(methyl methacrylate) nanoparticles were carried out in 3T3 cells, which showed no toxicity effect on the cells.

One-pot synthesis of biocompatible boronic acid-functionalized poly(methyl methacrylate) nanoparticles at sub-100 nm scale for glucose sensing

International Nuclear Information System (INIS)

Sakalak, Huseyin; Ulasan, Mehmet; Yavuz, Emine; Camli, Sevket Tolga; Yavuz, Mustafa Selman

2014-01-01

Poly(methyl methacrylate) nanoparticles containing 4-vinylphenyl boronic acid were synthesized in one pot by surfactant-free emulsion polymerization. The nanoparticles were characterized by scanning electron microscopy and dynamic light scattering. Boron content in the nanoparticles was confirmed by electron-dispersive X-ray spectroscopy. In polymerization process, several co-monomer ratios were studied in order to obtain optimum nanoparticle size. Average hydrodynamic diameter and polydispersity index of nanoparticles versus variation of acetone percentage in the solvent mixture and total monomer concentration were investigated. The effect of boronic acid concentration in the monomer mixture on nanoparticle size and size distribution was also reported. Without further functionalization to the nanoparticles, the catechol dye, alizarin red S, was bound to boronic acid-containing nanoparticles. These nanoparticles behave as a nanosensor by which glucose or fructose can be easily detected. Dye-containing nanoparticles were undertaken displacement reaction by glucose or fructose. The glucose or fructose content was also monitored by UV–Visible spectrophotometer. Furthermore, cytotoxicity studies of boronic acid-carrying poly(methyl methacrylate) nanoparticles were carried out in 3T3 cells, which showed no toxicity effect on the cells

Continued biological investigations of boron-rich oligomeric phosphate diesters (OPDs). Tumor-selective boron agents for BNCT

International Nuclear Information System (INIS)

Lee, Mark W.; Shelly, Kenneth; Kane, Robert R.; Hawthorne, M. Frederick

2006-01-01

Clinical success of Boron Neutron Capture Therapy will rely on the selective intracellular delivery of high concentrations of boron-10 to tumor tissue. In order for a boron agent to facilitate clinical success, the simultaneous needs of obtaining a high tumor dose, high tumor selectivity, and low systemic toxicity must be realized. Boron-rich oligomeric phosphate diesters (OPDs) are a class of highly water-soluble compounds containing up to 40% boron by weight. Previous work in our groups demonstrated that once placed in the cytoplasm of tumor cells, OPDs quickly accumulate within the cell nucleus. The objective of the current study was to determine the biodistribution of seven different free OPDs in BALB/c mice bearing EMT6 tumors. Fructose solutions containing between 1.4 and 6.4 micrograms of boron per gram of tissue were interveinously injected in mice seven to ten days after tumor implantation. At intervals during the study, animals were euthanized and samples of tumor, blood, liver, kidney, brain and skin were collected and analyzed for boron content using ICP-AES. Tumor boron concentrations of between 5 and 29 ppm were achieved and maintained over the 72-hour time course of each experiment. Several OPDs demonstrated high tumor selectivity with one oligomer exhibiting a tumor to blood ratio of 35:1. The apparent toxicity of each oligomer was assessed through animal behavior during the experiment and necropsy of each animal upon sacrifice. (author)

SHB1/HY1 Alleviates Excess Boron Stress by Increasing BOR4 Expression Level and Maintaining Boron Homeostasis in Arabidopsis Roots

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Qiang Lv

2017-05-01

Full Text Available Boron is an essential mineral nutrient for higher plant growth and development. However, excessive amounts of boron can be toxic. Here, we report on the characterization of an Arabidopsis mutant, shb1 (sensitive to high-level of boron 1, which exhibits hypersensitivity to excessive boron in roots. Positional cloning demonstrated that the shb1 mutant bears a point mutation in a gene encoding a heme oxygenase 1 (HO1 corresponding to the HY1 gene involved in photomorphogenesis. The transcription level of the SHB1/HY1 gene in roots is up-regulated under excessive boron stimulation. Either overexpressing SHB1/HY1 or applying the HO1 inducer hematin reduces boron accumulation in roots and confers high boron tolerance. Furthermore, carbon monoxide and bilirubin, catalytic products of HO1, partially rescue the boron toxicity-induced inhibition of primary root growth in shb1. Additionally, the mRNA level of BOR4, a boron efflux transporter, is reduced in shb1 roots with high levels of boron supplementation, and hematin cannot relieve the boron toxicity-induced root inhibition in bor4 mutants. Taken together, our study reveals that HO1 acts via its catalytic by-products to promote tolerance of excessive boron by up-regulating the transcription of the BOR4 gene and therefore promoting the exclusion of excessive boron in root cells.

Dynamic Failure and Fragmentation of a Hot-Pressed Boron Carbide

Science.gov (United States)

Sano, Tomoko; Vargas-Gonzalez, Lionel; LaSalvia, Jerry; Hogan, James David

2017-12-01

This study investigates the failure and fragmentation of a hot-pressed boron carbide during high rate impact experiments. Four impact experiments are performed using a composite-backed target configuration at similar velocities, where two of the impact experiments resulted in complete target penetration and two resulted in partial penetration. This paper seeks to evaluate and understand the dynamic behavior of the ceramic that led to either the complete or partial penetration cases, focusing on: (1) surface and internal failure features of fragments using optical, scanning electron, and transmission electron microscopy, and (2) fragment size analysis using state-of-the-art particle-sizing technology that informs about the consequences of failure. Detailed characterization of the mechanical properties and the microstructure is also performed. Results indicate that transgranular fracture was the primary mode of failure in this boron carbide material, and no stress-induced amorphization features were observed. Analysis of the fragment sizes for the partial and completely penetrated experiments revealed a possible correlation between larger fragment sizes and impact performance. The results will add insight into designing improved advanced ceramics for impact protection applications.

Quantum design and synthesis of a boron-oxygen-yttrium phase

International Nuclear Information System (INIS)

Music, Denis; Chirita, Valeriu; Kreissig, Ulrich; Czigany, Zsolt; Schneider, Jochen M.; Helmersson, Ulf

2003-01-01

Ab initio calculations are used to design a crystalline boron-oxygen-yttrium (BOY) phase. The essential constituent is yttrium substituting for oxygen in the boron suboxide structure (BO 0.17 ) with Y/B and O/B ratios of 0.07. The calculations predict that the BOY phase is 0.36 eV/atom more stable than crystalline BO 0.17 and experiments confirm the formation of crystalline thin films. The BOY phase was synthesized with reactive rf magnetron sputtering and identified with x-ray and selected area electron diffraction. Films with Y/B ratios ranging from 0.10 to 0.32, as determined via elastic recoil detection analysis, were grown over a wide range of temperatures (300-600 deg. C) and found to withstand 1000 deg. C

An empirical model for parameters affecting energy consumption in boron removal from boron-containing wastewaters by electrocoagulation

Energy Technology Data Exchange (ETDEWEB)

Yilmaz, A. Erdem [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering, 25240 Erzurum (Turkey)]. E-mail: aerdemy@atauni.edu.tr; Boncukcuoglu, Recep [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering, 25240 Erzurum (Turkey); Kocakerim, M. Muhtar [Atatuerk University, Faculty of Engineering, Department of Chemical Engineering, 25240 Erzurum (Turkey)

2007-06-01

In this study, it was investigated parameters affecting energy consumption in boron removal from boron containing wastewaters prepared synthetically, via electrocoagulation method. The solution pH, initial boron concentration, dose of supporting electrolyte, current density and temperature of solution were selected as experimental parameters affecting energy consumption. The obtained experimental results showed that boron removal efficiency reached up to 99% under optimum conditions, in which solution pH was 8.0, current density 6.0mA/cm{sup 2}, initial boron concentration 100mg/L and solution temperature 293K. The current density was an important parameter affecting energy consumption too. High current density applied to electrocoagulation cell increased energy consumption. Increasing solution temperature caused to decrease energy consumption that high temperature decreased potential applied under constant current density. That increasing initial boron concentration and dose of supporting electrolyte caused to increase specific conductivity of solution decreased energy consumption. As a result, it was seen that energy consumption for boron removal via electrocoagulation method could be minimized at optimum conditions. An empirical model was predicted by statistically. Experimentally obtained values were fitted with values predicted from empirical model being as following;[ECB]=7.6x10{sup 6}x[OH]{sup 0.11}x[CD]{sup 0.62}x[IBC]{sup -0.57}x[DSE]{sup -0.}= {sup 04}x[T]{sup -2.98}x[t] Unfortunately, the conditions obtained for optimum boron removal were not the conditions obtained for minimum energy consumption. It was determined that support electrolyte must be used for increase boron removal and decrease electrical energy consumption.

An empirical model for parameters affecting energy consumption in boron removal from boron-containing wastewaters by electrocoagulation

International Nuclear Information System (INIS)

Yilmaz, A. Erdem; Boncukcuoglu, Recep; Kocakerim, M. Muhtar

2007-01-01

In this study, it was investigated parameters affecting energy consumption in boron removal from boron containing wastewaters prepared synthetically, via electrocoagulation method. The solution pH, initial boron concentration, dose of supporting electrolyte, current density and temperature of solution were selected as experimental parameters affecting energy consumption. The obtained experimental results showed that boron removal efficiency reached up to 99% under optimum conditions, in which solution pH was 8.0, current density 6.0mA/cm 2 , initial boron concentration 100mg/L and solution temperature 293K. The current density was an important parameter affecting energy consumption too. High current density applied to electrocoagulation cell increased energy consumption. Increasing solution temperature caused to decrease energy consumption that high temperature decreased potential applied under constant current density. That increasing initial boron concentration and dose of supporting electrolyte caused to increase specific conductivity of solution decreased energy consumption. As a result, it was seen that energy consumption for boron removal via electrocoagulation method could be minimized at optimum conditions. An empirical model was predicted by statistically. Experimentally obtained values were fitted with values predicted from empirical model being as following;[ECB]=7.6x10 6 x[OH] 0.11 x[CD] 0.62 x[IBC] -0.57 x[DSE] -0.04 x[T] -2.98 x[t] Unfortunately, the conditions obtained for optimum boron removal were not the conditions obtained for minimum energy consumption. It was determined that support electrolyte must be used for increase boron removal and decrease electrical energy consumption.

The effect of carbon and boron on the accumulation of vacancy-oxygen complexes in silicon

International Nuclear Information System (INIS)

Akhmetov, V.D.; Bolotov, V.V.

1980-01-01

By means of IR-absorption measurements the dose dependencies of the concentrations of vacancy-oxygen complexes (VO), interstitial oxygen atoms (Osub(I)), substitutional carbon atoms (Csub(S)) and interstitial carbon-oxygen complexes (Csub(I)Osub(I)) in n- and p-type silicon irradiated with 1.1 MeV electrons have been investigated. The observed increase of the production rate of VO-complexes with the rise of carbon and boron atoms concentrations (these impurities act as sinks for silicon interstitial atoms) has been explained in terms of annihilation of the vacancies and interstitials on the oxygen atoms. The results obtained show that boron atoms are more effective sinks than carbon atoms for the interstitial silicon atoms. That seems to be connected not only with the higher probability of boron injection into interstitial position but also with the further capture of interstitial silicon atoms on the interstitial boron, i.e. with the interstitial cluster formation. (author)

Helium diffusion in irradiated boron carbide

International Nuclear Information System (INIS)

Hollenberg, G.W.

1981-03-01

Boron carbide has been internationally adopted as the neutron absorber material in the control and safety rods of large fast breeder reactors. Its relatively large neutron capture cross section at high neutron energies provides sufficient reactivity worth with a minimum of core space. In addition, the commercial availability of boron carbide makes it attractive from a fabrication standpoint. Instrumented irradiation experiments in EBR-II have provided continuous helium release data on boron carbide at a variety of operating temperatures. Although some microstructural and compositional variations were examined in these experiments most of the boron carbide was prototypic of that used in the Fast Flux Test Facility. The density of the boron carbide pellets was approximately 92% of theoretical. The boron carbide pellets were approximately 1.0 cm in diameter and possessed average grain sizes that varied from 8 to 30 μm. Pellet centerline temperatures were continually measured during the irradiation experiments

A quantitative comparison between electrocoagulation and chemical coagulation for boron removal from boron-containing solution

International Nuclear Information System (INIS)

Yilmaz, A. Erdem; Boncukcuoglu, Recep; Kocakerim, M. Muhtar

2007-01-01

This paper provides a quantitative comparison of electrocoagulation and chemical coagulation approaches based on boron removal. Electrocoagulation process delivers the coagulant in situ as the sacrificial anode corrodes, due to a fixed current density, while the simultaneous evolution of hydrogen at the cathode allows for pollutant removal by flotation. By comparison, conventional chemical coagulation typically adds a salt of the coagulant, with settling providing the primary pollutant removal path. Chemical coagulation was carried out via jar tests using aluminum chloride. Comparison was done with the same amount of coagulant between electrocoagulation and chemical coagulation processes. Boron removal obtained was higher with electrocoagulation process. In addition, it was seen that chemical coagulation has any effect for boron removal from boron-containing solution. At optimum conditions (e.g. pH 8.0 and aluminum dose of 7.45 g/L), boron removal efficiencies for electrocoagulation and chemical coagulation were 94.0% and 24.0%, respectively

A quantitative comparison between electrocoagulation and chemical coagulation for boron removal from boron-containing solution

Energy Technology Data Exchange (ETDEWEB)

Yilmaz, A. Erdem [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering, 25240 Erzurum (Turkey)], E-mail: aerdemy@atauni.edu.tr; Boncukcuoglu, Recep [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering, 25240 Erzurum (Turkey); Kocakerim, M. Muhtar [Atatuerk University, Faculty of Engineering, Department of Chemical Engineering, 25240 Erzurum (Turkey)

2007-10-22

This paper provides a quantitative comparison of electrocoagulation and chemical coagulation approaches based on boron removal. Electrocoagulation process delivers the coagulant in situ as the sacrificial anode corrodes, due to a fixed current density, while the simultaneous evolution of hydrogen at the cathode allows for pollutant removal by flotation. By comparison, conventional chemical coagulation typically adds a salt of the coagulant, with settling providing the primary pollutant removal path. Chemical coagulation was carried out via jar tests using aluminum chloride. Comparison was done with the same amount of coagulant between electrocoagulation and chemical coagulation processes. Boron removal obtained was higher with electrocoagulation process. In addition, it was seen that chemical coagulation has any effect for boron removal from boron-containing solution. At optimum conditions (e.g. pH 8.0 and aluminum dose of 7.45 g/L), boron removal efficiencies for electrocoagulation and chemical coagulation were 94.0% and 24.0%, respectively.

Boron diffusion in strained and strain-relaxed SiGe

International Nuclear Information System (INIS)

Wang, C.C.; Sheu, Y.M.; Liu, Sally; Duffy, R.; Heringa, A.; Cowern, N.E.B.; Griffin, P.B.

2005-01-01

SiGe has been utilized for aggressive CMOS technologies development recently and there are many references [M. Shima, T. Ueno, T. Kumise, H. Shido, Y. Sakuma, S. Nakamura, Symposium on VLSI Technology Technical Digest, 2002, pp. 94-95; T. Ghani, M. Armstrong, C. Auth, M. Bost, P. Charvat, G. Glass, T. Hoffmann, K. Johnson, C. Kenyon, J. Klaus, B. McIntyre, K. Mistry, A. Murthy, J. Sandford, M. Silberstein, S. Sivakumar, P. Smith, K. Zawadzki, S. Thompson, M. Bohr, International Electron Devices Meeting Technical Digest, December 2003, pp. 978-980; P. Bai, C. Auth, S. Balakrishnan, M. Bost, R. Brain, V. Chikarmane, R. Heussner, M. Hussein, J. Hwang, D. Ingerly, R. James, J. Jeong, C. Kenyon, E. Lee, S. Lee, N. Lindert, M. Liu, Z. Ma, T. Marieb, A. Murthy, R. Nagisetty, S. Natarajan, J. Neirynck, A. Ott, C. Parker, J. Sebastian, R. Shaheed, S. Sivakumar, J. Steigerwald, S. Tyagi, C. Weber, B. Woolery, A. Yeoh, K. Zhang, M. Bohr, International Electron Devices Meeting Technical Digest, December 2004, pp. 657-660] presenting the advantages brought by it. A better understanding regarding the boron diffusion behavior within and in the vicinity of SiGe is necessary to optimize the extension and the source/drain in pMOSFET. In order to achieve the goal, both effects from mechanical strain and Ge doping on boron diffusion have been investigated. However, only a few publications discuss the impacts of both. Furthermore, most researches investigate these two effects under the conditions of low boron concentration [P. Kuo, J.L. Hoyt, J.F. Gibbons, J.E. Turner, D. Lefforge, Appl. Phys. Lett. 66 (January (5)) (1995) 580-582; N.R. Zangenberg, J. Fage-Pedersen, J. Lundsgaard Hansen, A. Nylandsted Larsen, J. Appl. Phys. 94 (September (6)) (2003) 3883-3890] and high thermal budget anneal [P. Kuo, J.L. Hoyt, J.F. Gibbons, J.E. Turner, D. Lefforge, Appl. Phys. Lett. 66 (January (5)) (1995) 580-582; N.R. Zangenberg, J. Fage-Pedersen, J. Lundsgaard Hansen, A. Nylandsted Larsen, J. Appl

Enhanced Manifold of States Achieved in Heterostructures of Iron Selenide and Boron-Doped Graphene

Directory of Open Access Journals (Sweden)

Valentina Cantatore

2017-10-01

Full Text Available Enhanced superconductivity is sought by employing heterostructures composed of boron-doped graphene and iron selenide. Build-up of a composite manifold of near-degenerate noninteracting states formed by coupling top-of-valence-band states of FeSe to bottom-of-conduction-band states of boron-doped graphene is demonstrated. Intra- and intersubsystem excitons are explored by means of density functional theory in order to articulate a normal state from which superconductivity may emerge. The results are discussed in the context of electron correlation in general and multi-band superconductivity in particular.

Effect of electron injection on defect reactions in irradiated silicon containing boron, carbon, and oxygen

Science.gov (United States)

Makarenko, L. F.; Lastovskii, S. B.; Yakushevich, H. S.; Moll, M.; Pintilie, I.

2018-04-01

Comparative studies employing Deep Level Transient Spectroscopy and C-V measurements have been performed on recombination-enhanced reactions between defects of interstitial type in boron doped silicon diodes irradiated with alpha-particles. It has been shown that self-interstitial related defects which are immobile even at room temperatures can be activated by very low forward currents at liquid nitrogen temperatures. Their activation is accompanied by the appearance of interstitial carbon atoms. It has been found that at rather high forward current densities which enhance BiOi complex disappearance, a retardation of Ci annealing takes place. Contrary to conventional thermal annealing of the interstitial boron-interstitial oxygen complex, the use of forward current injection helps to recover an essential part of charge carriers removed due to irradiation.

Urea route to coat inorganic nanowires, carbon fibers and nanotubes by boron nitride

International Nuclear Information System (INIS)

Gomathi, A.; Ramya Harika, M.; Rao, C.N.R.

2008-01-01

A simple route involving urea as the nitrogen source has been employed to carry out boron nitride coating on carbon fibers, multi-walled carbon nanotubes and inorganic nanowires. The process involves heating the carbon fibers and nanotubes or inorganic nanowires in a mixture of H 3 BO 3 and urea, followed by a heat treatment at 1000 deg. C in a N 2 atmosphere. We have been able to characterize the BN coating by transmission electron microscopy as well as X-ray photoelectron spectroscopy. The urea decomposition route affords a simple method to coat boron nitride on one-dimensional nanostructures

Estudo regional da adubaçáo boratada do algodoeiro no Estado de São Paulo Regional tests of boron fertilization on cotton

Directory of Open Access Journals (Sweden)

Nelson Machado da Silva

1991-01-01

Full Text Available Quinze experimentos de adubação boratada foram realizados em condições de campo com o algodoeiro, em diferentes regiões produtoras paulistas, no período de 1979-86.O micronutriente foi aplicado na adubação do plantio, nas doses de 0,0; 0,2; 0,4; 0,8; 1,6 e 3,2kg/ha de B, como bórax, em esquema estatístico de quadrado latino. Utilizaram-se sementes dos cultivares IAC 17, nos quatro primeiros anos, e IAC 20, nos demais. Na maioria dos experimentos, houve resposta favorável à adubação, em termos de produção, embora se tenham obtido em apenas três deles (20% dos casos diferenças estatisticamente significativas. Quanto à concentração de boro no limbo (quinta folha, ocorreu aumento significativo em seis dos onze ensaios amostrados (55%. Reunindo os experimentos em função do histórico das glebas estudadas e da ocorrência de sintomas de deficiência ou de toxicidade de boro, discriminou-se muito bem o efeito geral da adubação. As mais altas produtividades foram alcançadas nos solos tradicionalmente cultivados e adubados e com a acidez corrigida. No entanto, a ação do micronutriente foi maior nos solos corrigidos e adubados com NPK, diminuindo para as glebas em fase de correção ou que já haviam recebido adubação boratada, sendo praticamente nula nos solos pouco cultivados, de pastagens. Observou-se uma relação significativa entre a produção e a concentração de B no solo, extraído pela solução de Mehlich ou, em especial, pela água quente, assim como entre a produção e a concentração de boro no limbo foliar. Como primeira aproximação, sugerem-se as faixas de 0,20 a 0,40ppm de B no solo (água quente, e de 25 a 40ppm de B no limbo da quinta folha, como indicadoras da necessidade de uso do boro na adubação do algodoeiro.After the confirmation of problems on cotton concerning boron nutrition in the State of São Paulo, Brazil, at the decade of 1970, experimental field tests were carried out and demonstrated

Structural and electronic properties of isovalent boron atoms in GaAs

Science.gov (United States)

Krammel, C. M.; Nattermann, L.; Sterzer, E.; Volz, K.; Koenraad, P. M.

2018-04-01

Boron containing GaAs, which is grown by metal organic vapour phase epitaxy, is studied at the atomic level by cross-sectional scanning tunneling microscopy (X-STM) and spectroscopy (STS). In topographic X-STM images, three classes of B related features are identified, which are attributed to individual B atoms on substitutional Ga sites down to the second layer below the natural {110} cleavage planes. The X-STM contrast of B atoms below the surface reflects primarily the structural modification of the GaAs matrix by the small B atoms. However, B atoms in the cleavage plane have in contrast to conventional isovalent impurities, such as Al and In, a strong influence on the local electronic structure similar to donors or acceptors. STS measurements show that B in the GaAs {110} surfaces gives rise to a localized state short below the conduction band (CB) edge while in bulk GaAs, the B impurity state is resonant with the CB. The analysis of BxGa1-xAs/GaAs quantum wells reveals a good crystal quality and shows that the incorporation of B atoms in GaAs can be controlled along the [001] growth direction at the atomic level. Surprisingly, the formation of the first and fourth nearest neighbor B pairs, which are oriented along the directions, is strongly suppressed at a B concentration of 1% while the third nearest neighbor B pairs are found more than twice as often than expected for a completely spatially random pattern.

Stability and electronic structure of iron nanoparticle anchored on defective hexagonal boron nitrogen nanosheet: A first-principle study

International Nuclear Information System (INIS)

Lin, Sen; Huang, Jing; Ye, Xinxin

2014-01-01

Highlights: • Fe 13 nanoparticle strongly interacts with the monovacancy of h-BN nanosheet. • Significant charges are transferred from Fe 13 to the defective h-BN nanosheet. • The upshift of d-band center makes the surface Fe atoms of supported Fe 13 with higher reactivity. - Abstract: By first-principle methods, we investigate the stability and electronic structures of Fe 13 nanoparticles anchored on hexagonal boron nitrogen nanosheets (h-BNNSs) with monovacancy defect sites. It is found that the defect sites such as boron and nitrogen vacancy significantly increase the adsorption energies of Fe 13 , suggesting that the supported Fe 13 nanoparticles should be very stable against sintering at high temperatures. From the calculated density of states, we testify that the strong interaction is attributed to the coupling between the 3d orbitals of Fe atoms with the sp 2 dangling bonds at the defect sites. The Bader charge and differential charge density analyses reveal that there is significant charge redistribution at the interface between Fe 13 and the substrates, leading to positive charges located on most of the Fe atoms. Additionally, our results show that the strong binding of the nanoparticle results in the upshift of d-band center of Fe 13 toward the Fermi level, thus making the surface Fe atoms with higher reactivity. This work gives a detailed understanding the interaction between Fe 13 nanoparticle and defective h-BNNS and will provide helpful instructions in the design and synthesis of supported Fe-based catalysts in heterogeneous catalysis

Shock Response of Boron Carbide

National Research Council Canada - National Science Library

Dandekar, D. P. (Dattatraya Purushottam)

2001-01-01

.... The present work was undertaken to determine tensile/spall strength of boron carbide under plane shock wave loading and to analyze all available shock compression data on boron carbide materials...

Sliding behavior of boron ion-implanted 304 stainless steel

International Nuclear Information System (INIS)

Shrivastava, S.; Jain, A.; Singh, C.

1995-01-01

The authors have studied the influence of boron ion implantation on the friction and wear behavior of 304 stainless steel. The authors find an increase in microhardness following implantation. The authors also observed a reduction in wear and coefficient of friction. They have measured the microhardness, inside the wear tracks and have found a large increase in the values in the unimplanted specimens and only a small increase in the implanted specimens. These observations have thrown light on the change in the wear mechanism between the two cases. The authors have also used Scanning Electron Microscopy and Energy Dispersive Analysis of X-rays, to characterize the differences in the mode of wear. The change in wear behavior is brought about by the ability of boron to prevent the surface from transforming into a hard brittle layer during wear

Structural models of increasing complexity for icosahedral boron carbide with compositions throughout the single-phase region from first principles

Science.gov (United States)

Ektarawong, A.; Simak, S. I.; Alling, B.

2018-05-01

We perform first-principles calculations to investigate the phase stability of boron carbide, concentrating on the recently proposed alternative structural models composed not only of the regularly studied B11Cp (CBC) and B12(CBC), but also of B12(CBCB) and B12( B4 ). We find that a combination of the four structural motifs can result in low-energy electron precise configurations of boron carbide. Among several considered configurations within the composition range of B10.5C and B4C , we identify in addition to the regularly studied B11Cp (CBC) at the composition of B4C two low-energy configurations, resulting in a new view of the B-C convex hull. Those are [B12 (CBC)]0.67[B12(B4)] 0.33 and [B12 (CBC)]0.67[ B12 (CBCB)]0.33, corresponding to compositions of B10.5C and B6.67C , respectively. As a consequence, B12(CBC) at the composition of B6.5C , previously suggested in the literature as a stable configuration of boron carbide, is no longer part of the B -C convex hull. By inspecting the electronic density of states as well as the elastic moduli, we find that the alternative models of boron carbide can provide a reasonably good description for electronic and elastic properties of the material in comparison with the experiments, highlighting the importance of considering B12(CBCB) and B12( B4 ), together with the previously proposed B11Cp (CBC) and B12(CBC), as the crucial ingredients for modeling boron carbide with compositions throughout the single-phase region.

Boronization on NSTX using Deuterated Trimethylboron

International Nuclear Information System (INIS)

Blanchard, W.R.; Gernhardt, R.C.; Kugel, H.W.; LaMarche, P.H.

2002-01-01

Boronization on the National Spherical Torus Experiment (NSTX) has proved to be quite beneficial with increases in confinement and density, and decreases in impurities observed in the plasma. The boron has been applied to the interior surfaces of NSTX, about every 2 to 3 weeks of plasma operation, by producing a glow discharge in the vacuum vessel using deuterated trimethylboron (TMB) in a 10% mixture with helium. Special NSTX requirements restricted the selection of the candidate boronization method to the use of deuterated boron compounds. Deuterated TMB met these requirements, but is a hazardous gas and special care in the execution of the boronization process is required. This paper describes the existing GDC, Gas Injection, and Torus Vacuum Pumping System hardware used for this process, the glow discharge process, and the automated control system that allows for remote operation to maximize both the safety and efficacy of applying the boron coating. The administrative requirements and the detailed procedure for the setup, operation and shutdown of the process are also described

Deuterated-decaborane using boronization on JT-60U

Energy Technology Data Exchange (ETDEWEB)

Yagyu, Jun-ichi; Arai, Takashi; Kaminaga, Atsushi; Miyata, Katsuyuki [Japan Atomic Energy Research Inst., Naka, Ibaraki (Japan). Naka Fusion Research Establishment; Arai, Masaru [Kaihatsu Denki Co., Ltd., Tokyo (Japan)

2001-03-01

In JT-60U, boronization using hydride-decaborane (B{sub 10}H{sub 14}) vaporization has been conducted for the first wall conditioning. Compared to other discharge cleaning (DC), boronization is claimed to be efficient in reduction of oxygen impurities and hydrogen recycling in plasma. However, there are some problems in reduction of hydrogen included in boron film and stabilization of DC glow discharge during the boronization. To solve these problems, a new boronization method using deuterated-decaborane (B{sub 10}D{sub 14}) was adopted instead of the conventional hydride-decaborane. As a result, hydrogen content in the boron film decreased clearly and discharge conditioning shots, for decreasing hydrogen content in plasmas, after the boronization were reduced to 1/10 in comparison to the conventional process. Furthermore, DC glow discharge became stable, with only helium carrier gas, and it was possible to save 30 hours in maximum of the time necessary to boronization. It is shown that the boronization using deuterated-decaborane is very efficient and effective method for the first wall conditioning. (author)

Efeito da omissão de macronutrientes e boro no crescimento, nos sintomas de deficiências nutricionais e na composição mineral de plantas de camucamuzeiro Effect of omission of macronutrient and boron on growth, on symptoms of nutritional deficiency and mineral composition in camucamuzeiro plants (Myrciaria dubia

Directory of Open Access Journals (Sweden)

Ismael de Jesus Matos Viégas

2004-08-01

Full Text Available Com o objetivo de avaliar o efeito da omissão de macronutrientes e do micronutriente boro no crescimento, nos sintomas de deficiências nutricionais e na composição mineral em plantas de camucamuzeiro, conduziu-se experimento em casa de vegetação, mediante a técnica do elemento faltante. O delineamento experimental foi o inteiramente casualizado, com quatro repetições e oito tratamentos, sendo completo (N, P, K, Ca, Mg, S e micronutrientes e omissão individual de N, P, K, Ca, Mg, S e B. Os sintomas visuais de deficiências foram, de modo geral, de fácil caracterização para todos os nutrientes. Com exceção do fósforo, as omissões dos demais nutrientes afetaram a produção de matéria seca, quando comparados ao tratamento completo. Com base nos teores em g kg-1, dos macronutrientes, e em mg kg-1, do micronutriente boro nas folhas, infere-se em uma primeira aproximação dos valores adequados (completo, ou seja: 16,9 a 18,2 de N ; 1,2 a 1,9 de P; 5,2 a 6,0 de K; 9,9 a 11,7 de Ca; 1,4 a 3,6 de Mg; 2,4 a 2,8 de S ; 8,4 a 9,5 de B e do deficiente (omissão , 6,5 a 7,9 de N ; =0,9 de P; =1,7 de K ; 5,4 a 6,5 de Ca; =0,7 de Mg; 0,7 a 1,2 de S e 1,1 a 1,9 de BThe effects of omission of macronutrient and boron on growth, on symptoms of nutritional deficiency and mineral composition of plants of "camucamuzeiro" were evaluated. The experiment was carried out in a greenhouse, by means of the missing element technique. The experimental design was completely randomized, with eight treatments and four repetitions, including complete (N, P, K, Ca, Mg, S and micronutrients and individual omission of N, P, K, Ca, Mg, S and B. The visual symptoms of deficiency were easily characterized for all the nutrients. Excepting for P, dry mass was affected by the omission of all the other nutrients, when compared with the complete treatment. Based on the macronutrient (g kg-1 and on the micronutrient boron (mg kg-1 on leaves contents, a first approach of the

Characterization of electron-deficient chemical bonding of diborane with attosecond electron wavepacket dynamics and laser response

International Nuclear Information System (INIS)

Yonehara, Takehiro; Takatsuka, Kazuo

2009-01-01

We report a theoretical study of non-adiabatic electrons-nuclei coupled dynamics of diborane H 2 BH 2 BH 2 under several types of short pulse lasers. This molecule is known to have particularly interesting geometrical and electronic structures, which originate from the electron-deficient chemical bondings. We revisit the chemical bonding of diborane from the view point of electron wavepacket dynamics coupled with nuclear motions, and attempt to probe the characteristics of it by examining its response to intense laser fields. We study in the following three aspects, (i) bond formation of diborane by collision between two monoboranes, (ii) attosecond electron wavepacket dynamics in the ground state and first excited state by circularly polarized laser pulse, and (iii) induced fragmentation back to monoborane molecules by linearly polarized laser. The wave lengths of two types of laser field employed are 200 nm (in UV range) and 800 nm (in IR range), and we track the dynamics from hundreds of attoseconds up to few tens of femtoseconds. To this end, we apply the ab initio semiclassical Ehrenfest theory, into which the classical vector potential of a laser field is introduced. Basic features of the non-adiabatic response of electrons to the laser fields is elucidated in this scheme. To analyze the electronic wavepackets thus obtained, we figure out bond order density that is a spatial distribution of the bond order and bond order flux density arising only from the bonding regions, and so on. Main findings in this work are: (i) dimerization of monoboranes to diborane is so efficient that even intense laser is hard to prevent it; (ii) collective motions of electron flux emerge in the central BHHB bonding area in response to the circularly polarized laser fields; (iii) laser polarization with the direction of central two BH bonding vector is efficient for the cleavage of BH 3 -BH 3 ; and (iv) nuclear derivative coupling plays a critical role in the field induced

Boronization in TEXTOR

International Nuclear Information System (INIS)

Winter, J.; Esser, H.G.; Koenen, L.; Reimer, H.; Seggern, J. v.; Schlueter, J.; Waelbroeck, F.; Wienhold, P.; Veprek, S.

1989-01-01

The liner and limiters of TEXTOR have been coated in situ with a boron containing carbon film using a RG discharge in a throughflow of 0.8 He + 0.1 B 2 H 6 + 0.1 CH 4 . The average film thickness was 30-50 nm, the ratio of boron and carbon in the layer was about 1:1 according to Auger Electron Spectroscopy. Subsequent tokamak discharges are characterized by a small fraction of radiated power ( eff lower than 1.2 are derived from conductivity measurements. The most prominent change in the impurity concentration compared to good conditions in a carbonized surrounding is measured for oxygen. The value OVI/anti n e of the OVI intensity normalized to the averaged plasma density anti n e decreases by more than a factor of four. The decrease in the oxygen content manifests itself also as a reduction of the CO and CO 2 partial pressures measured during and after the discharge with a sniffer probe. The carbon levels are reduced by a factor of about two as measured by the normalized intensity CII/anti n e of the CII line and via the ratio of the C fluxes and deuterium fluxed measured at the limiter (CI/D α ). The wall shows a pronounced sorption of hydrogen from the plasma, easing the density control and the establishment of low recycling conditions. The beneficial conditions did not show a significant deterioration during more than 200 discharges, including numerous shots at ICRH power levels >2 MW. (orig.)

Technology of boron-containing polyphosphate fertilizer 'Phosphobor'

International Nuclear Information System (INIS)

Aldabergenov, M.K.; Balakaeva, T.G.

1995-01-01

A technology is developed for producing 'Phosphobor' fertilizer based on the rock phosphate weal (17-18% P 2 O 5 ) with additions of boron-magnesium compound. Boron is part of polyphosphate fertilizer in the form of polymeric compounds of phosphorus and boron. Phosphorus and boron copolymers -boratophosphates - are easily formed in the process of polyphosphate fertilizers production, since borates undergo a mutual polycondensation reaction with phosphates. 8 refs., 1 fig

Low electron density of states at the boron site of TMB{sub 2} (TM = Ti, Zr, Hf, and Nb): a {sup 11}B NMR study

Energy Technology Data Exchange (ETDEWEB)

Paluch, S.; Zogal, O.J.; Peshev, P

2004-11-30

The local density of states at the boron site in TMB{sub 2} (TM=Ti, Zr, Hf, and Nb) has been examined using the solid-state {sup 11}B NMR technique. The magic angle spinning (MAS) NMR spectra at room temperature and the spin-lattice relaxation rates have been measured as functions of temperature (30-293 K). The resonance line shifts are small and become more negative in the direction from 3d- to 5d-elements. The relaxation rates follow a linear law characteristic of hyperfine magnetic interaction with conduction electrons. With borides of IV group metals the data can be understood in terms of a very low s-electron density of states and absence of a p-character of the conduction electron wave function at the Fermi level while in the case of NbB{sub 2} a small partial p-electron density of states is assumed. Then, the results are in good agreement with the earlier theoretical prediction.

ISOBORDAT: An Online Data Base on Boron Isotopes

Energy Technology Data Exchange (ETDEWEB)

Pennisi, M.; Adorni-Braccesi, A.; Andreani, D.; Gori, L.; Gonfiantini, R. [Istituto di Geoscienze e Georisorse, CNR, Pisa (Italy); Sciuto, P. F. [Servizio Geologico, Sismico e dei Suoli, D.G. Ambiente e Difesa del Suolo e della Costa, Regione Emilia Romagna, Bologna (Italy)

2013-07-15

From 1986, boron isotope data in natural substances increased sharply in scientific publications. Analytical difficulties derived from complex geochemical matrices have been faced and interlaboratory calibrations reported in the boron literature. Boron isotopes are nowdays applied to investigate boron origin and migration in natural waters, sources of boron contamination, water-rock interactions and also contribute to water resource management. This is especially important in those areas where boron content exceeds the local regulations for drinking water supply and boron sources need to be identified. ISOBORDAT, an interactive database on boron isotope composition and content in natural waters is presented to the wider community of boron isotope users. The database's structure, scope and applications are reported, along with a discussion on {delta}{sup 11}B values obtained in Italian waters. In the database boron data are structured in the following categories: rainwater, rivers, lakes, groundwater and potential contaminants. New categories (medium and high enthalpy fluids from volcanic and geothermal areas) are anticipated. ISOBORDAT aims to be as interactive as possible and will be developed taking into account information and suggestions received. The database is continually undergoing revision to keep pace with continuous data publication. Indications of data that are missing at present are greatly appreciated. (author)

Structure and mechanical properties of Fe--Cr--Mo--C alloys with and without boron

International Nuclear Information System (INIS)

Chen, Y.L.

1976-05-01

Nonconventional heat treatments were designed to improve the mechanical properties of these martensitic steels. Results show that the as-quenched structures of both steels consist mainly of dislocated martensite. In the boron-free steel, there are more lath boundary retained austenite films. The boron-treated steel shows higher strengths at all tempering temperatures but with lower Charpy V-notch impact energies. Both steels show tempered martensite embrittlement when tempered at 350 0 C for 1 hour. The properties above 500 0 C tempering are significantly different in the two steels. While the boron-free steel shows a continuous increase in toughness when tempered above 500 0 C, the boron-treated steel suffers a second drop in toughness at 600 0 C tempering. Transmission electron microscopy studies show that in the 600 0 C tempered boron-treated steel large, more or less continuous cementite films precipitate at the lath boundaries, which are probably responsible for the embrittlement. The differences in mechanical properties at tempering temperatures above 500 0 C are rationalized in terms of the effect of boron-vacancy interactions on the recovery and recrystallization behavior of these steels. Boron seems to impair room temperature impact toughness at low strength levels but not at high strength levels. By simple nonconventional heat treatments of the present alloys, martensitic steels may be produced with quite good strength-toughness properties which are much superior to those of existing commercial ultra-high strength steels. It has also been shown that the as-quenched martensitic steels need not be brittle and in fact very good combinations of strength and toughness can be obtained with as-quenched martensitic steels. 56 fig., 5 tables, 75 references

Boron-isotope fractionation in plants

Energy Technology Data Exchange (ETDEWEB)

Marentes, E [Univ. of Guelph, Dept. of Horticultural Science, Guelph, Ontario (Canada); Vanderpool, R A [USDA/ARS Grand Forks Human Nutrition Research Center, Grand Forks, North Dakota (United States); Shelp, B J [Univ. of Guelph, Dept. of Horticultural Science, Guelph, Ontario (Canada)

1997-10-15

Naturally-occurring variations in the abundance of stable isotopes of carbon, nitrogen, oxygen, and other elements in plants have been reported and are now used to understand various physiological processes in plants. Boron (B) isotopic variation in several plant species have been documented, but no determination as to whether plants fractionate the stable isotopes of boron, {sup 11}B and {sup 10}B, has been made. Here, we report that plants with differing B requirements (wheat, corn and broccoli) fractionated boron. The whole plant was enriched in {sup 11}B relative to the nutrient solution, and the leaves were enriched in {sup 10}B and the stem in {sup 11}B relative to the xylem sap. Although at present, a mechanistic role for boron in plants is uncertain, potential fractionating mechanisms are discussed. (author)

Boron-isotope fractionation in plants

International Nuclear Information System (INIS)

Marentes, E.; Vanderpool, R.A.; Shelp, B.J.

1997-01-01

Naturally-occurring variations in the abundance of stable isotopes of carbon, nitrogen, oxygen, and other elements in plants have been reported and are now used to understand various physiological processes in plants. Boron (B) isotopic variation in several plant species have been documented, but no determination as to whether plants fractionate the stable isotopes of boron, 11 B and 10 B, has been made. Here, we report that plants with differing B requirements (wheat, corn and broccoli) fractionated boron. The whole plant was enriched in 11 B relative to the nutrient solution, and the leaves were enriched in 10 B and the stem in 11 B relative to the xylem sap. Although at present, a mechanistic role for boron in plants is uncertain, potential fractionating mechanisms are discussed. (author)

Boron content effect on the high-temperature plasticity of corrosion resistant low-carbon austenite type steels

International Nuclear Information System (INIS)

Gol'dshtejn, Ya.E.; Shmatko, M.N.; Chuvatina, S.N.

1976-01-01

With the concept that the state of grain and subgrain boundaries influences the hot plasticity of corrosion resistant steel as a starting point, the study was undertaken of the effect of boron microalloying up on the intergranular strength and of the action boron exerts upon the distribution (redistribution) of other phases present in austenitic 03Kh16N14M3 steels. An electron microscope study of the composition of redundant phases and that of the fine structure of steel have shown the effect of small additions of boron upon the hot plasticity of steel to be linked directly to its influence upon austenite disintegration and the precipitation along the boundaries of crystals of redundant phases in the course of hot plastic deformation. The action of boron upon the process plasticity of steel depends on the temperature and the rate of deformation which govern the kinetics of the precipitation of the redundant phases

Evidence of amorphisation of B{sub 4}C boron carbide under slow, heavy ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Gosset, D., E-mail: dominique.gosset@cea.fr [CEA, DEN, DMN-SRMA-LA2M, F-91191 Gif/Yvette (France); Miro, S. [CEA, DEN, DMN-SRMP-JANNUS, F-91191 Gif/Yvette (France); Doriot, S. [CEA, DEN, DMN-SRMA-LA2M, F-91191 Gif/Yvette (France); Victor, G. [CNRS-IN2P3-IPNL, F-69622 Villeurbanne (France); Motte, V. [CEA, DEN, DMN-SRMA-LA2M, F-91191 Gif/Yvette (France)

2015-12-15

Boron carbide is widely used either as armor-plate or neutron absorber. In both cases, a good structural stability is required. However, a few studies have shown amorphisation may occur in severe conditions. Hard impacts lead to the formation of amorphous bands. Some irradiations in electronic regime with H or He ions have also shown amorphisation of the material. Most authors however consider the structure is not drastically affected by irradiations in the ballistic regime. Here, we have irradiated at room temperature dense boron carbide pellets with Au 4 MeV ions, for which most of the damage is in the ballistic regime. This study is part of a program devoted to the behavior of boron carbide under irradiation. Raman observations have been performed after the irradiations together with transmission electron microscopy (TEM). Raman observations show a strong structural damage at moderate fluences (10{sup 14}/cm{sup 2}, about 0.1 dpa), in agreement with previous studies. On the other hand, TEM shows the structure remains crystalline up to 10{sup 15}/cm{sup 2} then partially amorphises. The amorphisation is heterogeneous, with the formation of nanometric amorphous zones with increasing density. It then appears short range and long range disorder occurs at quite different damage levels. Further experiments are in progress aiming at studying the structural stability of boron carbide and isostructural materials (α-B, B{sub 6}Si,…).

XPS analysis of boron doped heterofullerenes

Energy Technology Data Exchange (ETDEWEB)

Schnyder, B; Koetz, R [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Muhr, H J; Nesper, R [ETH Zurich, Zurich (Switzerland)

1997-06-01

Boron heterofullerenes were generated through arc-evaporation of doped graphite rods in a helium atmosphere. According to mass spectrometric analysis only mono-substituted fullerenes like C{sub 59}B, C{sub 69}B and higher homologues together with a large fraction of higher undoped fullerenes were extracted and enriched when pyridine was used as the solvent. XPS analysis of the extracts indicated the presence of two boron species with significantly different binding energies. One peak was assigned to borid acid. The second one corresponds to boron in the fullerene cage, which is mainly C{sub 59}B, according to the mass spectrum. This boron is in a somewhat higher oxidation state than that of ordinary boron-carbon compounds. The reported synthesis and extraction procedure opens a viable route for production of macroscopic amounts of these compounds. (author) 2 figs., 1 tab., 7 refs.

Syntheses of super-hard boron-rich solids in the B-C-N-O system

Science.gov (United States)

Hubert, Herve Pierre

Alpha-rhombohedral (alpha-rh.) B-rich materials belonging to the B-C-N-O system were prepared using high-pressure, high-temperature techniques. The samples were synthesized using a multianvil device and characterized by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and parallel electron energy-loss spectroscopy (PEELS). In the B-O system, the formation of BsbxO materials produced from mixtures of B and Bsb2Osb3 between 1 to 10 GPa and 1000 to 1800sp°C was investigated. Graphitic and diamond-like Bsb2O, reported in previous studies, were not detected. The refractory boron suboxide, nominally Bsb6O, which has the alpha-rh. B structure, is the dominant suboxide in the P and T range of our investigation. High-pressure techniques were used successfully to synthesize boron suboxide of improved purity and crystallinity, and less oxygen-deficient (i.e., closer to the nominal Bsb6O composition) in comparison to room-pressure syntheses. Quantitative analyses indicate compositions of Bsb6Osb{0.95} and Bsb6Osb{0.77} for high-pressure and room-pressure samples, respectively. The first preparation, between 4 to 5.5 GPa, of Bsb6O in which the preferred form of the material is as macroscopic near-perfect regular icosahedra (to 30 mum in diameter) is reported. The Bsb6O icosahedra are similar to the multiply-twinned particles observed in some cubic materials. However, a major difference is that Bsb6O has a rhombohedral structure that closely fits the geometrical requirements for obtaining icosahedral twins. The Bsb6O grains are neither 3D-periodic nor quasicrystalline. Their formation can be described as a Mackay packing of icosahedral Bsb{12} units and provides an alternative to crystal formation by propagation of translational symmetry. Icosahedral twins ranging from 20 nm to 30 mum in diameter, as well as micron-sized euhedral crystals (to 40 mum) were prepared. The structural similarity of compounds with the alpha

Effect of pH on boron adsorption in some soils of Paraná, Brazil

Directory of Open Access Journals (Sweden)

Fábio Steiner

2013-06-01

Full Text Available Temporary B deficiency can be triggered by liming of acid soils because of increased B adsorption at higher soil pH. Plants respond directly to the activity of B in soil solution and only indirectly to B adsorbed on soil constituents. Because the range between deficient and toxic B concentration is relatively narrow, this poses difficulty in maintaining appropriate B levels in soil solution. Thus, knowledge of the chemical behavior of B in the soil is particularly important. The present study investigated the effect of soil pH on B adsorption in four soils of Paraná State, and to correlate these values with the physical and chemical properties of the soils. Surface samples were taken from a Rhodic Hapludox, Arenic Hapludalf, Arenic Hapludult, and one Typic Usthorthent. To evaluate the effect of pH on B adsorption, subsamples soil received the application of increasing rates of calcium carbonate. Boron adsorption was accomplished by shaking 2.0 g soil, for 24 h, with 20 mL of 0.01 mol L¹ NaCl solution containing different concentrations (0.0, 0.1, 0.2, 0.4, 0.8, 1.2, 1.6, 2.0, and 4.0 mg B L-1. Sorption was fitted to non-linear form of the Langmuir adsorption isotherm. Boron adsorption increased as concentration increased. Boron adsorption was dependent on soil pH, increasing as a function of pH in the range between 4.6 and 7.4, although the bonding energy has decreased. Maximum adsorption capacity (MAC of B was observed in the Arenic Hapludalf (49.8 mg B kg-1 soil followed by Arenic Hapludult (22.5 mg kg-1, Rhodic Hapludox (17.4 mg kg-1, and Typic Usthorthent (7.0 mg kg-1. The organic matter content, clay content, and aluminum oxide content (Al2O3 were the soils properties that affecting the B adsorption on Paraná soils.

A novel RE-chrome-boronizing technology assisted by fast multiple rotation rolling treatment at low temperature

Energy Technology Data Exchange (ETDEWEB)

Yuan, Xing-dong [School of Materials Science and Engineering, Shandong University, Jinan 250061 (China); School of Materials Science and Engineering, Shandong Jianzhu University, Jinan 250101 (China); Xu, Bin, E-mail: xubin@sdjzu.edu.cn [School of Materials Science and Engineering, Shandong Jianzhu University, Jinan 250101 (China); Cai, Yu-cheng [School of Materials Science and Engineering, Shandong Jianzhu University, Jinan 250101 (China)

2015-12-01

Highlights: • A nanostructured layer with grain size of approximately 30 nm was successfully fabricated in the upper-layer of carbon steel. • The penetrating rate was enhanced significantly by the fast multiple rotation rolling (FMRR) treatment at low temperature. • A novel and efficient RE-Chrome-Boronizing technology assisted by fast multiple rotation rolling (FMRR) treatment at low temperature was used to fabricate boride layers on the surface of carbon steel. - Abstract: The boride layer was fabricated on the surface of carbon steel by a novel RE-Chrome-Boronizing technology assisted by fast multiple rotation rolling (FMRR) treatment at low temperature. The microstructure of the boride layer was characterized by using scanning electron microscopy (SEM). The microstructure of the top surface layer of substrate was characterized by transmission electron microscopy (TEM) and high resolution rransmission electron microscopy (HRTEM). Experimental results showed that a nanostructured layer with grain size of approximately 30 nm was obtained; the amorphous phase and high-density dislocations were observed in upper-layer of FMRR samples, which led to the reduction of diffusion activation energy of boron atoms. Boride layers fabricated on the FMRR samples are continuous, dense, uniform, and low in brittleness. The penetrating rate was enhanced significantly when the FMRR samples were Cr-Rare earth-boronized at 650 °C for 6 h. The thickness of the boride layer of FMRR samples on carbon steel was approximately 25 μm when the duration was 60 min, which was approximately 1.5 times higher than the original sample. The boride layer consisted of mainly Fe2B, and adheres well to the metallic substrate.

Core-level photoabsorption study of defects and metastable bonding configurations in boron nitride

Energy Technology Data Exchange (ETDEWEB)

Jimenez, I.; Jankowski, A.F.; Terminello, L.J. [Lawrence Berkeley National Lab., CA (United States)] [and others

1997-04-01

Boron nitride is an interesting material for technological applications and for fundamental solid state physics investigations. It is a compound isoelectronic with carbon and, like carbon can possess sp{sup 2} and sp{sup 3} bonded phases resembling graphite and diamond. BN crystallizes in the sp{sup 2}-bonded hexagonal (h-BN), rhombohedral (r-BN) and turbostratic phases, and in the sp{sup 3}-bonded cubic (c-BN) and wurtzite (w-BN) phases. A new family of materials is obtained when replacing C-C pairs in graphite with isoelectronic B-N pairs, resulting in C{sub 2}BN compounds. Regarding other boron compounds, BN is exceptional in the sense that it has standard two-center bonds with conventional coordination numbers, while other boron compounds (e.g. B{sub 4}C) are based on the boron icosahedron unit with three-center bonds and high coordination numbers. The existence of several allotropic forms and fullerene-like structures for BN suggests a rich variety of local bonding and poses the questions of how this affects the local electronic structure and how the material accommodates the stress induced in the transition regions between different phases. One would expect point defects to play a crucial role in stress accommodation, but these must also have a strong influence in the electronic structure, since the B-N bond is polar and a point defect will thus be a charged structure. The study of point defects in relationship to the electronic structure is of fundamental interest in these materials. Recently, the authors have shown that Near-Edge X-ray Absorption Fine Structure (NEXAFS) is sensitive to point defects in h-BN, and to the formation of metastable phases even in amorphous materials. This is significant since other phase identification techniques like vibrational spectroscopies or x-ray diffraction yield ambiguous results for nanocrystalline and amorphous samples. Serendipitously, NEXAFS also combines chemical selectivity with point defect sensitivity.

Fine-tuning the nucleophilic reactivities of boron ate complexes derived from aryl and heteroaryl boronic esters.

Science.gov (United States)

Berionni, Guillaume; Leonov, Artem I; Mayer, Peter; Ofial, Armin R; Mayr, Herbert

2015-02-23

Boron ate complexes derived from thienyl and furyl boronic esters and aryllithium compounds have been isolated and characterized by X-ray crystallography. Products and mechanisms of their reactions with carbenium and iminium ions have been analyzed. Kinetics of these reactions were monitored by UV/Vis spectroscopy, and the influence of the aryl substituents, the diol ligands (pinacol, ethylene glycol, neopentyl glycol, catechol), and the counterions on the nucleophilic reactivity of the boron ate complexes were examined. A Hammett correlation confirmed the polar nature of their reactions with benzhydrylium ions, and the correlation lg k(20 °C)=sN (E+N) was employed to determine the nucleophilicities of the boron ate complexes and to compare them with those of other borates and boronates. The neopentyl and ethylene glycol derivatives were found to be 10(4) times more reactive than the pinacol and catechol derivatives. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Proceedings of workshop on 'boron science and boron neutron capture therapy'

Energy Technology Data Exchange (ETDEWEB)

Kitaoka, Y. [ed.

1998-12-01

This volume contains the abstracts and programs of the 8th (1996), 9th (1997) and 10th (1998) of the workshop on 'the Boron Science and Boron Neutron Capture Therapy' and the recent progress reports especially subscribed. The 11 of the presented papers are indexed individually. (J.P.N.)

Porous boron doped diamonds as metal-free catalysts for the oxygen reduction reaction in alkaline solution

Science.gov (United States)

Suo, Ni; Huang, Hao; Wu, Aimin; Cao, Guozhong; Hou, Xiaoduo; Zhang, Guifeng

2018-05-01

Porous boron doped diamonds (BDDs) were obtained on foam nickel substrates with a porosity of 80%, 85%, 90% and 95% respectively by hot filament chemical vapor deposition (HFCVD) technology. Scanning electron microscopy (SEM) reveals that uniform and compact BDDs with a cauliflower-like morphology have covered the overall frame of the foam nickel substrates. Raman spectroscopy shows that the BDDs have a poor crystallinity due to heavily doping boron. X-ray photoelectron spectroscopy (XPS) analysis effectively demonstrates that boron atoms can be successfully incorporated into the crystal lattice of diamonds. Electrochemical measurements indicate that the oxygen reduction potential is unaffected by the specific surface area (SSA), and both the onset potential and the limiting diffusion current density are enhanced with increasing SSA. It is also found that the durability and methanol tolerance of the boron doped diamond catalysts are attenuated as the increasing of SSA. The SSA of the catalyst is directly proportional to the oxygen reduction activity and inversely to the durability and methanol resistance. These results provide a reference to the application of porous boron doped diamonds as potential cathodic catalysts for the oxygen reduction reaction in alkaline solution by adjusting the SSA.

Synthesis of borophenes: Anisotropic, two-dimensional boron polymorphs

Energy Technology Data Exchange (ETDEWEB)

Mannix, A. J.; Zhou, X. -F.; Kiraly, B.; Wood, J. D.; Alducin, D.; Myers, B. D.; Liu, X.; Fisher, B. L.; Santiago, U.; Guest, J. R.; Yacaman, M. J.; Ponce, A.; Oganov, A. R.; Hersam, M. C.; Guisinger, N. P.

2015-12-17

At the atomic-cluster scale, pure boron is markedly similar to carbon, forming simple planar molecules and cage-like fullerenes. Theoretical studies predict that two-dimensional (2D) boron sheets will adopt an atomic configuration similar to that of boron atomic clusters. We synthesized atomically thin, crystalline 2D boron sheets (i.e., borophene) on silver surfaces under ultrahigh-vacuum conditions. Atomic-scale characterization, supported by theoretical calculations, revealed structures reminiscent of fused boron clusters with multiple scales of anisotropic, out-of-plane buckling. Unlike bulk boron allotropes, borophene shows metallic characteristics that are consistent with predictions of a highly anisotropic, 2D metal.

Influence of boron concentration on growth characteristic and electro-catalytic performance of boron-doped diamond electrodes prepared by direct current plasma chemical vapor deposition

International Nuclear Information System (INIS)

Feng Yujie; Lv Jiangwei; Liu Junfeng; Gao Na; Peng Hongyan; Chen Yuqiang

2011-01-01

A series of boron-doped diamond (BDD) electrodes were prepared by direct current plasma chemical vapor deposition (DC-PCVD) with different compositions of CH 4 /H 2 /B(OCH 3 ) 3 gas mixture. A maximum growth rate of 0.65 mg cm -2 h -1 was obtained with CH 4 /H 2 /B(OCH 3 ) 3 radio of 4/190/10 and this growth condition was also a turning point for discharge plasma stability which arose from the addition of B(OCH 3 ) 3 that changed electron energy distribution and influenced the plasma reaction. The surface coating structure and electro-catalytic performance of the BDD electrodes were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, Hall test, and electrochemical measurement and electro-catalytic oxidation in phenol solution. It is suggested that the boron doping level and the thermal stress in the films are the main factors affecting the electro-catalytic characteristics of the electrodes. Low boron doping level with CH 4 /H 2 /B(OCH 3 ) 3 ratio of 4/199/1 decreased the films electrical conductivity and its electro-catalytic activity. When the carrier concentration in the films reached around 10 20 cm -3 with CH 4 /H 2 /B(OCH 3 ) 3 ratio over a range of 4/195/5-4/185/15, the thermal stress in the films was the key reason that influenced the electro-catalytic activity of the electrodes for its effect on diamond lattice expansion. Therefore, the BDD electrode with modest CH 4 /H 2 /B(OCH 3 ) 3 ratio of 4/190/10 possessed the best phenol removal efficiency.

Boron isotopic enrichment by displacement chromatography

International Nuclear Information System (INIS)

Mohapatra, K.K.; Bose, Arun

2014-01-01

10 B enriched boron is used in applications requiring high volumetric neutron absorption (absorption cross section- 3837 barn for thermal and 1 barn for 1 MeV fast neutron). It is used in fast breeder reactor (as control rod material), in neutron counter, in Boron Neutron Capture Therapy etc. Owing to very small separation factor, boron isotopic enrichment is a complex process requiring large number of separation stages. Heavy Water Board has ventured in industrial scale production of 10 B enriched boron using Exchange Distillation Process as well as Ion Displacement Chromatography Process. Ion Displacement Chromatography process is used in Boron Enrichment Plant at HWP, Manuguru. It is based on isotopic exchange between borate ions (B(OH) 4 - ) on anion exchange resin and boric acid passing through resin. The isotopic exchange takes place due to difference in zero point energy of 10 B and 11 B

Structural modifications induced by ion irradiation and temperature in boron carbide B4C

Science.gov (United States)

Victor, G.; Pipon, Y.; Bérerd, N.; Toulhoat, N.; Moncoffre, N.; Djourelov, N.; Miro, S.; Baillet, J.; Pradeilles, N.; Rapaud, O.; Maître, A.; Gosset, D.

2015-12-01

Already used as neutron absorber in the current French nuclear reactors, boron carbide (B4C) is also considered in the future Sodium Fast Reactors of the next generation (Gen IV). Due to severe irradiation conditions occurring in these reactors, it is of primary importance that this material presents a high structural resistance under irradiation, both in the ballistic and electronic damage regimes. Previous works have shown an important structural resistance of boron carbide even at high neutron fluences. Nevertheless, the structural modification mechanisms due to irradiation are not well understood. Therefore the aim of this paper is to study structural modifications induced in B4C samples in different damage regimes. The boron carbide pellets were shaped and sintered by using spark plasma sintering method. They were then irradiated in several conditions at room temperature or 800 °C, either by favoring the creation of ballistic damage (between 1 and 3 dpa), or by favoring the electronic excitations using 100 MeV swift iodine ions (Se ≈ 15 keV/nm). Ex situ micro-Raman spectroscopy and Doppler broadening of annihilation radiation technique with variable energy slow positrons were coupled to follow the evolution of the B4C structure under irradiation.

A critical assessment of boron target compounds for boron neutron capture therapy.

Science.gov (United States)

Hawthorne, M Frederick; Lee, Mark W

2003-01-01

Boron neutron capture therapy (BNCT) has undergone dramatic developments since its inception by Locher in 1936 and the development of nuclear energy during World War II. The ensuing Cold War spawned the entirely new field of polyhedral borane chemistry, rapid advances in nuclear reactor technology and a corresponding increase in the number to reactors potentially available for BNCT. This effort has been largely oriented toward the eradication of glioblastoma multiforme (GBM) and melanoma with reduced interest in other types of malignancies. The design and synthesis of boron-10 target compounds needed for BNCT was not channeled to those types of compounds specifically required for GBM or melanoma. Consequently, a number of potentially useful boron agents are known which have not been biologically evaluated beyond a cursory examination and only three boron-10 enriched target species are approved for human use following their Investigational New Drug classification by the US Food and Drug Administration; BSH, BPA and GB-10. All ongoing clinical trials with GBM and melanoma are necessarily conducted with one of these three species and most often with BPA. The further development of BNCT is presently stalled by the absence of strong support for advanced compound evaluation and compound discovery driven by recent advances in biology and chemistry. A rigorous demonstration of BNCT efficacy surpassing that of currently available protocols has yet to be achieved. This article discusses the past history of compound development, contemporary problems such as compound classification and those problems which impede future advances. The latter include means for biological evaluation of new (and existing) boron target candidates at all stages of their development and the large-scale synthesis of boron target species for clinical trials and beyond. The future of BNCT is bright if latitude is given to the choice of clinical disease to be treated and if a recognized study

Influence of boronization on operation with high-Z plasma facing components in Alcator C-Mod

International Nuclear Information System (INIS)

Lipschultz, B.; Lin, Y.; Marmar, E.S.; Whyte, D.G.; Wukitch, S.; Hutchinson, I.H.; Irby, J.; LaBombard, B.; Reinke, M.L.; Terry, J.L.; Wright, G.

2007-01-01

We report the results of operation of Alcator C-Mod with all high-Z molybdenum plasma facing component (PFC) surfaces. Without boron-coated PFCs energy confinement was poor (H ITER,89 ∼ 1) due to high core molybdenum (n Mo /n e ≤ 0.1%) and radiation. After applying boron coatings, n Mo /n e was reduced by a factor of 10-20 with H ITER,89 approaching 2. Results of between-discharge boronization, localized at various major radii, point towards important molybdenum source regions being small, outside the divertor, and due to RF-sheath-rectification. Boronization also has a significant effect on the plasma startup phase lowering Z eff , radiation, and lowering the runaway electron damage. The requirement of low-Z coatings over at least a fraction of the Mo PFCs in C-Mod for best performance together with the larger than expected D retention in Mo, give impetus for further high-Z PFC investigations to better predict the performance of un-coated tungsten surfaces in ITER and beyond

Evaluation of mechanical properties of aluminium alloy–alumina–boron carbide metal matrix composites

International Nuclear Information System (INIS)

Vijaya Ramnath, B.; Elanchezhian, C.; Jaivignesh, M.; Rajesh, S.; Parswajinan, C.; Siddique Ahmed Ghias, A.

2014-01-01

Highlights: • Fabrication of MMC with aluminium alloy–alumina–boron carbide is done. • Different proportions of reinforcements are added. • The effects of varying proportions are studied. • Investigation on mechanical properties above composites is performed. • Failure morphology analysis is done using SEM. - Abstract: This paper deals with the fabrication and mechanical investigation of aluminium alloy, alumina (Al 2 O 3 ) and boron carbide metal matrix composites. Aluminium is the matrix metal having properties like light weight, high strength and ease of machinability. Alumina which has better wear resistance, high strength, hardness and boron carbide which has excellent hardness and fracture toughness are added as reinforcements. Here, the fabrication is done by stir casting which involves mixing the required quantities of additives into stirred molten aluminium. After solidification, the samples are prepared and tested to find the various mechanical properties like tensile, flexural, impact and hardness. The internal structure of the composite is observed using Scanning Electron Microscope (SEM)

ICP-MS determination of boron: method optimization during preparation of graphite reference material for boron

International Nuclear Information System (INIS)

Granthali, S.K.; Shailaja, P.P.; Mainsha, V.; Venkatesh, K.; Kallola, K.S.; Sanjukta, A.K.

2017-01-01

Graphite finds widespread use in nuclear reactors as moderator, reflector, and fuel fabricating components because of its thermal stability and integrity. The manufacturing process consists of various mixing, moulding and baking operations followed by heat-treatment between 2500 °C and 3000 °C. The high temperature treatment is required to drive the amorphous carbon-to-graphite phase transformation. Since synthetic graphite is processed at high temperature, impurity concentrations in the precursor carbon get significantly reduced due to volatilization. However boron may might partly gets converted into boron carbide at high temperatures in the carbon environment of graphite and remains stable (B_4C: boiling point 3500 °C) in the matrix. Literature survey reveals the use of various methods for determination of boron. Previously we have developed a method for determination of boron in graphite electrodes using inductively coupled plasma mass spectrometry (ICP-MS). The method involves removal of graphite matrix by ignition of the sample at 800°C in presence of saturated barium hydroxide solution to prevent the loss of boron. Here we are reporting a modification in the method by using calcium carbonate in place of barium hydroxide and using beryllium (Be) as an internal standard, which resulted in a better precession. The method was validated by spike recovery experiments as well as using another technique viz. Inductively Coupled Plasma Optical Emission Spectrometry (ICP-OES). The modified method was applied in evaluation of boron concentration in the graphite reference material prepared

Chemistry and technology of boron and its compounds

International Nuclear Information System (INIS)

Zhigach, A.F.; Parfenov, B.P.; Svitsyn, R.A.

1995-01-01

The results of research dealing with development of technologies of boron trichloride, boron hydride, aminoderivative boron hydrides, metal borohydrides, carboranes, carborane-containing polymers, carried out at the institute of organoelemental compounds, are presented. Physicochemical properties of the compounds have been studied and analytical methods have been developed. Data on toxicity and fire hazard of boron compounds are provided

Boron hydride analogues of the fullerenes

International Nuclear Information System (INIS)

Quong, A.A.; Pederson, M.R.; Broughton, J.Q.

1994-01-01

The BH moiety is isoelectronic with C. We have studied the stability of the (BH) 60 analogue of the C 60 fullerene as well as the dual-structure (BH) 32 icosahedron, both of them being putative structures, by performing local-density-functional electronic calculations. To aid in our analysis, we have also studied other homologues of these systems. We find that the latter, i.e., the dual structure, is the more stable although the former is as stable as one of the latter's lower homologues. Boron hydrides, it seems, naturally form the dual structures used in algorithmic optimization of complex fullerene systems. Fully relaxed geometries are reported as well as electron affinities and effective Hubbard U parameters. These systems form very stable anions and we conclude that a search for BH analogues of the C 60 alkali-metal supeconductors might prove very fruitful

Insights into the Mechanisms Underlying Boron Homeostasis in Plants

Directory of Open Access Journals (Sweden)

Akira Yoshinari

2017-11-01

Full Text Available Boron is an essential element for plants but is toxic in excess. Therefore, plants must adapt to both limiting and excess boron conditions for normal growth. Boron transport in plants is primarily based on three transport mechanisms across the plasma membrane: passive diffusion of boric acid, facilitated diffusion of boric acid via channels, and export of borate anion via transporters. Under boron -limiting conditions, boric acid channels and borate exporters function in the uptake and translocation of boron to support growth of various plant species. In Arabidopsis thaliana, NIP5;1 and BOR1 are located in the plasma membrane and polarized toward soil and stele, respectively, in various root cells, for efficient transport of boron from the soil to the stele. Importantly, sufficient levels of boron induce downregulation of NIP5;1 and BOR1 through mRNA degradation and proteolysis through endocytosis, respectively. In addition, borate exporters, such as Arabidopsis BOR4 and barley Bot1, function in boron exclusion from tissues and cells under conditions of excess boron. Thus, plants actively regulate intracellular localization and abundance of transport proteins to maintain boron homeostasis. In this review, the physiological roles and regulatory mechanisms of intracellular localization and abundance of boron transport proteins are discussed.

Raman spectra of hot-pressed boron suboxide

CSIR Research Space (South Africa)

Machaka, R

2011-01-01

Full Text Available on in- situ/online measurements (such as GIXRD, Raman Spectroscopy, FIB- Electron Microscopy) during (i) ion implantation, (ii) PLD growth of nanoparticles SW/MW-CNTs, oxide semiconductor multi-layer, metal/Si and metal/metal systems. Moreover, He...], aluminium magnesium boride ? AlMgB14 [8], and the newly synthesized boron subnitride ? B13N2 [9, 10]. With hardness values reported between 24 GPa and 45 GPa [7, 11, 12], B6O is sometimes considered to be the third hardest material only after diamond...

Enrichment of boron 10

International Nuclear Information System (INIS)

Coutinho, C.M.M.; Rodrigues Filho, J.S.R.; Umeda, K.; Echternacht, M.V.

1990-01-01

A isotopic separation pilot plant with five ion exchange columns interconnected in series were designed and built in the IEN. The columns are charged with a strong anionic resin in its alkaline form. The boric acid solution is introduced in the separation columns until it reaches a absorbing zone length which is sufficient to obtain the desired boron-10 isotopic concentration. The boric acid absorbing zone movement is provided by the injection of a diluted hydrochloric acid solution, which replace the boric acid throughout the columns. The absorbing zone equilibrium length is proportional to its total length. The enriched boron-10 and the depleted boron are located in the final boundary and in the initial position of the absorbing zones, respectively. (author)

Green synthesis of boron doped graphene and its application as high performance anode material in Li ion battery

International Nuclear Information System (INIS)

Sahoo, Madhumita; Sreena, K.P.; Vinayan, B.P.; Ramaprabhu, S.

2015-01-01

Graphical abstract: Boron doped graphene (B-G), synthesized by simple hydrogen induced reduction technique using boric acid as boron precursor, have more uneven surface as a result of smaller bonding distance of boron compared to carbon, showed high capacity and high rate capability compared to pristine graphene as an anode material for Li ion battery application. - Abstract: The present work demonstrates a facile route for the large-scale, catalyst free, and green synthesis approach of boron doped graphene (B-G) and its use as high performance anode material for Li ion battery (LIB) application. Boron atoms were doped into graphene framework with an atomic percentage of 5.93% via hydrogen induced thermal reduction technique using graphite oxide and boric acid as precursors. Various characterization techniques were used to confirm the boron doping in graphene sheets. B-G as anode material shows a discharge capacity of 548 mAh g −1 at 100 mA g −1 after 30th cycles. At high current density value of 1 A g −1 , B-G as anode material enhances the specific capacity by about 1.7 times compared to pristine graphene. The present study shows a simplistic way of boron doping in graphene leading to an enhanced Li ion adsorption due to the change in electronic states

Green synthesis of boron doped graphene and its application as high performance anode material in Li ion battery

Energy Technology Data Exchange (ETDEWEB)

Sahoo, Madhumita; Sreena, K.P.; Vinayan, B.P.; Ramaprabhu, S., E-mail: ramp@iitm.ac.in

2015-01-15

Graphical abstract: Boron doped graphene (B-G), synthesized by simple hydrogen induced reduction technique using boric acid as boron precursor, have more uneven surface as a result of smaller bonding distance of boron compared to carbon, showed high capacity and high rate capability compared to pristine graphene as an anode material for Li ion battery application. - Abstract: The present work demonstrates a facile route for the large-scale, catalyst free, and green synthesis approach of boron doped graphene (B-G) and its use as high performance anode material for Li ion battery (LIB) application. Boron atoms were doped into graphene framework with an atomic percentage of 5.93% via hydrogen induced thermal reduction technique using graphite oxide and boric acid as precursors. Various characterization techniques were used to confirm the boron doping in graphene sheets. B-G as anode material shows a discharge capacity of 548 mAh g{sup −1} at 100 mA g{sup −1} after 30th cycles. At high current density value of 1 A g{sup −1}, B-G as anode material enhances the specific capacity by about 1.7 times compared to pristine graphene. The present study shows a simplistic way of boron doping in graphene leading to an enhanced Li ion adsorption due to the change in electronic states.

Fabrication of Capacitive Micromachined Ultrasonic Transducers Using a Boron Etch-Stop Method

DEFF Research Database (Denmark)

Diederichsen, Søren Elmin; Sandborg-Olsen, Filip; Engholm, Mathias

2016-01-01

wt% potassium hydroxide solution with isopropyl alcohol added to increase the etch selectivity to the highly doped boron layer. The resulting plate thickness uniformity is estimated from scanning electron micrographs to a mean value of 2.00μm±2.5%. The resonant frequency in air for a 1-D linear CMUT...

Analysis of boron nitride by flame spectrometry methods

International Nuclear Information System (INIS)

Telegin, G.F.; Chapysheva, G.Ya.; Shilkina, N.N.

1989-01-01

A rapid method has been developed for determination of free and total boron contents as well as trace impurities in boron nitride by using autoclave sample decomposition followed by atomic emission and atomic absorption determination. The relative standard deviation is not greater than 0.03 in the determination of free boron 0.012 in the determination of total boron content

Structure prediction of boron-doped graphene by machine learning

Science.gov (United States)

M. Dieb, Thaer; Hou, Zhufeng; Tsuda, Koji

2018-06-01

Heteroatom doping has endowed graphene with manifold aspects of material properties and boosted its applications. The atomic structure determination of doped graphene is vital to understand its material properties. Motivated by the recently synthesized boron-doped graphene with relatively high concentration, here we employ machine learning methods to search the most stable structures of doped boron atoms in graphene, in conjunction with the atomistic simulations. From the determined stable structures, we find that in the free-standing pristine graphene, the doped boron atoms energetically prefer to substitute for the carbon atoms at different sublattice sites and that the para configuration of boron-boron pair is dominant in the cases of high boron concentrations. The boron doping can increase the work function of graphene by 0.7 eV for a boron content higher than 3.1%.

Discharge cleaning on TFTR after boronization

International Nuclear Information System (INIS)

Mueller, D.; Dylla, H.F.; LaMarche, P.H.; Bell, M.G.; Blanchard, W.; Bush, C.E.; Gentile, C.; Hawryluk, R.J.; HIll, K.W.; Janos, A.C.; Jobes, F.C; Owens, D.K.; Pearson, G.; Schivell, J.; Ulrickson, M.A.; Vannoy, C.; Wong, K.L.

1991-05-01

At the beginning of the 1990 TFTR experimental run, after replacement of POCO-AXF-5Q graphite tiles on the midplane of the bumper limiter by carbon fiber composite (CFC) tiles and prior to any Pulse Discharge Cleaning (PDC), boronization was performed. Boronization is the deposition of a layer of boron and carbon on the vacuum vessel inner surface by a glow discharge in a diborane, methane and helium mixture. The amount of discharge cleaning required after boronization was substantially reduced compared to that which was needed after previous openings when boronization was not done. Previously, after a major shutdown, about 10 5 low current (∼20 kA) Taylor Discharge Cleaning (TDC) pulses were required before high current (∼400 kA) aggressive Pulse Discharge Cleaning (PDC) pulses could be performed successfully. Aggressive PDC is used to heat the limiters from the vessel bakeout temperature of 150 degrees C to 250 degrees C for a period of several hours. Heating the limiters is important to increase the rate at which water is removed from the carbon limiter tiles. After boronization, the number of required TDC pulses was reduced to <5000. The number of aggressive PDC pulses required was approximately unchanged. 14 refs., 1 tab

Superplastic boronizing of duplex stainless steel under dual compression method

International Nuclear Information System (INIS)

Jauhari, I.; Yusof, H.A.M.; Saidan, R.

2011-01-01

Highlights: → Superplastic boronizing. → Dual compression method has been developed. → Hard boride layer. → Bulk deformation was significantly thicker the boronized layer. → New data on boronizing could be expanded the application of DSS in industries. - Abstract: In this work, SPB of duplex stainless steel (DSS) under compression method is studied with the objective to produce ultra hard and thick boronized layer using minimal amount of boron powder and at a much faster boronizing time as compared to the conventional process. SPB is conducted under dual compression methods. In the first method DSS is boronized using a minimal amount of boron powder under a fix pre-strained compression condition throughout the process. The compression strain is controlled in such a way that plastic deformation is restricted at the surface asperities of the substrate in contact with the boron powder. In the second method, the boronized specimen taken from the first mode is compressed superplastically up to a certain compressive strain under a certain strain rate condition. The process in the second method is conducted without the present of boron powder. As compared with the conventional boronizing process, through this SPB under dual compression methods, a much harder and thicker boronized layer thickness is able to be produced using a minimal amount of boron powder.

Superplastic boronizing of duplex stainless steel under dual compression method

Energy Technology Data Exchange (ETDEWEB)

Jauhari, I., E-mail: iswadi@um.edu.my [Department of Mechanical Engineering, Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur (Malaysia); Yusof, H.A.M.; Saidan, R. [Department of Mechanical Engineering, Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur (Malaysia)

2011-10-25

Highlights: {yields} Superplastic boronizing. {yields} Dual compression method has been developed. {yields} Hard boride layer. {yields} Bulk deformation was significantly thicker the boronized layer. {yields} New data on boronizing could be expanded the application of DSS in industries. - Abstract: In this work, SPB of duplex stainless steel (DSS) under compression method is studied with the objective to produce ultra hard and thick boronized layer using minimal amount of boron powder and at a much faster boronizing time as compared to the conventional process. SPB is conducted under dual compression methods. In the first method DSS is boronized using a minimal amount of boron powder under a fix pre-strained compression condition throughout the process. The compression strain is controlled in such a way that plastic deformation is restricted at the surface asperities of the substrate in contact with the boron powder. In the second method, the boronized specimen taken from the first mode is compressed superplastically up to a certain compressive strain under a certain strain rate condition. The process in the second method is conducted without the present of boron powder. As compared with the conventional boronizing process, through this SPB under dual compression methods, a much harder and thicker boronized layer thickness is able to be produced using a minimal amount of boron powder.

Interfacial-Bonding-Regulated CO Oxidation over Pt Atoms Immobilized on Gas-Exfoliated Hexagonal Boron Nitride

KAUST Repository

Liu, Xin; Zhu, Hongdan; Linguerri, Roberto; Han, Yu; Chambaud, Gilberte; Meng, Changgong

2017-01-01

We compared the electronic structure and CO oxidation mechanisms over Pt atoms immobilized by both B-vacancies and N-vacancies on gas-exfoliated hexagonal boron nitride. We showed that chemical bonds are formed between the B atoms associated

Investigation of Hard Boron Rich Solids: Osmium Diboride and β-Rhombohedral Boron

Science.gov (United States)

Hebbache, M.; Živković, D.

Recently, we succeeded in synthesizing three osmium borides, i.e., OsB1.1, Os2B3 and OsB2. Up to date, almost nothing is known about the physical properties of these materials. Microhardness measurements show that OsB2 is extremely hard. Ab initio calculations show that it is due to formation of covalent bonds between boron atoms. OsB2 is also a low compressibility material. It can be used for hard coatings. The β-rhombohedral polymorph of boron is the second hardest elemental crystal (H ≈ 33 GPa). It is also very light and a p-type semiconductor. In early 1970s, it has been shown that the doping of boron with 3d transition elements enhances its hardness by about 25%. We predict that, in general, heavily doped samples MBx, with x ≤ 31 or equivalently a dopant concentration larger than 3.2 at.%, should be ultrahard, i.e., H > 43 GPa. The relevant dopants M are Al, Cu, Sc, Mn, Mg and Li. In addition to these properties, boron-rich materials have a very low volatility, a high chemical inertness and high melting point. They are suitable for applications under extreme conditions and thermoelectric equipment.

Mobilisation and attenuation of boron during coal mine rehabilitation, Wangaloa, New Zealand

International Nuclear Information System (INIS)

Craw, D.; Rufaut, C.G.; Haffert, L.; Todd, A.

2006-01-01

Environmental mobility and fate of boron has been traced from source to discharge waters through the rehabilitated Wangaloa coal mine in southern New Zealand. The boron is derived initially from coal, which has up to 450 mg/kg B. The coal also contains pyrite (2-5 wt.% S), which oxidizes to yield a low-pH environment (typical pH 2-5). Weathering of coal-bearing waste rock liberates B into rainwater that infiltrates into waste rock or evaporates to leave a gypsum crust enriched in B, possibly as boric acid or colemanite as inferred from geochemical modelling. Surface waters dissolve this evaporative material periodically, yielding total B concentrations up to 6 mg/L, at pH<4.5. Some of the available B is taken up by plants that have been established on the waste rock, resulting in foliage B concentrations of up to 230 mg/kg (dry weight). Partial attenuation of dissolved B by adsorption to iron oxyhydroxide occurs as groundwater passes through waste rock, but this is inhibited by adsorption competition with dissolved sulphate (up to 600 mg/L). Groundwater flows from the mine through a pit lake and wetland, with total dissolved B near 1 mg/kg after dilution and limited adsorption attenuation has occurred. Despite the widespread B mobility throughout the rehabilitated mine, there is little evidence of B toxicity in plants. The B concentrations in discharging waters are in the environmentally safe range for most aquatic organisms, being neither deficient in B as a micronutrient, nor boron-toxic. (author)

Separation process for boron isotopes

Energy Technology Data Exchange (ETDEWEB)

Rockwood, S D

1975-06-12

The method according to the invention is characterized by the steps of preparing a gaseous mixture of BCl/sub 3/ containing the isotopes of boron and oxygen as the extractor, irradiating that mixture in the tube of the separator device by means of P- or R-lines of a CO/sub 2/ laser for exciting the molecules containing a given isotope of boron, simultaneously irradiating the mixture with UV for photodissociating the excited BCl/sub 3/ molecules and separating BCl/sub 3/ from the reaction products of photodissociation and from oxygen. Such method is suitable for preparing boron used in nuclear reactors.

Density separation of boron particles. Final report

International Nuclear Information System (INIS)

Smith, R.M.

1980-04-01

A density distribution much broader than expected was observed in lots of natural boron powder supplied by two different sources. The material in both lots was found to have a rhombohedral crystal structure, and the only other parameters which seemed to account for such a distribution were impurities within the crystal structure and varying isotopic ratios. A separation technique was established to isolate boron particles in narrow densty ranges. The isolated fractions were subsequently analyzed for B 10 and total boron content in an effort to determine whether selective isotopic enrichment and nonhomogeneous impurity distribution were the causes for the broad density distribution of the boron powders. It was found that although the B 10 content remained nearly constant around 18%, the total boron content varied from 37.5 to 98.7%. One of the lots also was found to contain an apparently high level of alpha rhombohedral boron which broadened the density distribution considerably. During this work, a capability for removing boron particles containing gross amounts of impurities and, thereby, improving the overall purity of the remaining material was developed. In addition, the separation technique used in this study apparently isolated particles with alpha and beta rhombohedral crystal structures, although the only supporting evidence is density data

The intergranular segregation of boron in substoichiometric Ni/sub 3/Al

Energy Technology Data Exchange (ETDEWEB)

Choudhury, A.

1987-12-01

The intermetallic compound Ni/sub 3/Al offers promise as a material for high temperature applications. In addition to its unusual property of increasing strength with temperature (until approx.700/sup 0/C), it has excellent corrosion and oxidation resistance. Microalloying the alloy with boron has been shown to be dramatically effective in improving its inherent intergranular brittleness. This improvement results from the strong tendency of boron to segregate to the grain boundaries of Ni/sub 3/Al. This research deals with the study of the segregation behavior of boron. Auger electron spectroscopy was chosen as the technique adopted to study this segregation. The strong effect of segregant level on the grain boundary strength level can be controlled by thermal history variations and by variations in the level of solute in the bulk. Cathodic hydrogen charging was shown to be a potent tool in opening up other wise cohesive boundaries for analysis. The effective binding energy of boron at the grain boundaries of Ni/sub 3/Al was calculated from experimental data; it was found to vary between 0.2 and 0.45 eV. Kinetics of segregation have been investigated; the present set of kinetic studies were shown to be inadequate to find a diffusion coefficient and that temperatures lower than those studied here need to be used. As an associated investigation, a set of elemental standards were developed for the particular scanning Auger microprobe used in this study. 141 refs., 94 figs., 26 tabs.

Tuning the electronic and optical properties of hexagonal boron-nitride nanosheet by inserting graphene quantum dots

Science.gov (United States)

Ding, Yi-Min; Shi, Jun-Jie; Zhang, Min; Wu, Meng; Wang, Hui; Cen, Yu-Lang; Pan, Shu-Hang; Guo, Wen-Hui

2018-02-01

It is difficult to integrate two-dimensional (2D) graphene and hexagonal boron-nitride (h-BN) in optoelectronic nanodevices, due to the semi-metal and insulator characteristic of graphene and h-BN, respectively. Using the state-of-the-art first-principles calculations based on many-body perturbation theory, we investigate the electronic and optical properties of h-BN nanosheet embedded with graphene dots. We find that C atom impurities doped in h-BN nanosheet tend to phase-separate into graphene quantum dots (QD), and BNC hybrid structure, i.e. a graphene dot within a h-BN background, can be formed. The band gaps of BNC hybrid structures have an inverse relationship with the size of graphene dot. The calculated optical band gaps for BNC structures vary from 4.71 eV to 3.77 eV, which are much smaller than that of h-BN nanosheet. Furthermore, the valence band maximum is located in C atoms bonded to B atoms and conduction band minimum is located in C atoms bonded to N atoms, which means the electron and hole wave functions are closely distributed around the graphene dot. The bound excitons, localized around the graphene dot, determine the optical spectra of the BNC hybrid structures, in which the exciton binding energies decrease with increase in the size of graphene dots. Our results provide an important theoretical basis for the design and development of BNC-based optoelectronic nanodevices.

Folate Functionalized Boron Nitride Nanotubes and their Selective Uptake by Glioblastoma Multiforme Cells: Implications for their Use as Boron Carriers in Clinical Boron Neutron Capture Therapy.

Science.gov (United States)

Ciofani, Gianni; Raffa, Vittoria; Menciassi, Arianna; Cuschieri, Alfred

2008-11-25

Boron neutron capture therapy (BNCT) is increasingly being used in the treatment of several aggressive cancers, including cerebral glioblastoma multiforme. The main requirement for this therapy is selective targeting of tumor cells by sufficient quantities of (10)B atoms required for their capture/irradiation with low-energy thermal neutrons. The low content of boron targeting species in glioblastoma multiforme accounts for the difficulty in selective targeting of this very malignant cerebral tumor by this radiation modality. In the present study, we have used for the first time boron nitride nanotubes as carriers of boron atoms to overcome this problem and enhance the selective targeting and ablative efficacy of BNCT for these tumors. Following their dispersion in aqueous solution by noncovalent coating with biocompatible poly-l-lysine solutions, boron nitride nanotubes were functionalized with a fluorescent probe (quantum dots) to enable their tracking and with folic acid as selective tumor targeting ligand. Initial in vitro studies have confirmed substantive and selective uptake of these nanovectors by glioblastoma multiforme cells, an observation which confirms their potential clinical application for BNCT therapy for these malignant cerebral tumors.

Folate Functionalized Boron Nitride Nanotubes and their Selective Uptake by Glioblastoma Multiforme Cells: Implications for their Use as Boron Carriers in Clinical Boron Neutron Capture Therapy

Directory of Open Access Journals (Sweden)

Ciofani Gianni

2008-01-01

Full Text Available Abstract Boron neutron capture therapy (BNCT is increasingly being used in the treatment of several aggressive cancers, including cerebral glioblastoma multiforme. The main requirement for this therapy is selective targeting of tumor cells by sufficient quantities of10B atoms required for their capture/irradiation with low-energy thermal neutrons. The low content of boron targeting species in glioblastoma multiforme accounts for the difficulty in selective targeting of this very malignant cerebral tumor by this radiation modality. In the present study, we have used for the first time boron nitride nanotubes as carriers of boron atoms to overcome this problem and enhance the selective targeting and ablative efficacy of BNCT for these tumors. Following their dispersion in aqueous solution by noncovalent coating with biocompatible poly-l-lysine solutions, boron nitride nanotubes were functionalized with a fluorescent probe (quantum dots to enable their tracking and with folic acid as selective tumor targeting ligand. Initial in vitro studies have confirmed substantive and selective uptake of these nanovectors by glioblastoma multiforme cells, an observation which confirms their potential clinical application for BNCT therapy for these malignant cerebral tumors.

Development of magnetic resonance technology for noninvasive boron quantification

International Nuclear Information System (INIS)

Bradshaw, K.M.

1990-11-01

Boron magnetic resonance imaging (MRI) and spectroscopy (MRS) were developed in support of the noninvasive boron quantification task of the Idaho National Engineering Laboratory (INEL) Power Burst Facility/Boron Neutron Capture Therapy (PBF/BNCT) program. The hardware and software described in this report are modifications specific to a GE Signa trademark MRI system, release 3.X and are necessary for boron magnetic resonance operation. The technology developed in this task has been applied to obtaining animal pharmacokinetic data of boron compounds (drug time response) and the in-vivo localization of boron in animal tissue noninvasively. 9 refs., 21 figs

Combined Effects of Boron and NaCl on Wheat Seedlings

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ZHEN Mei-nan

2015-08-01

Full Text Available To investigate the combined effects of boron(Band NaCl on the growth of wheat, a pot experiment was conducted using wheat (Triticum aestivum Linn.seedlings. Boron concentrations of culture medium were set as 0, 50 mg·kg-1 and 100 mg·kg-1, and NaCl concentrations were 0, 1 g·kg-1 and 2 g·kg-1. The results showed that both boron and NaCl could significantly inhibit wheat growth. At 50 mg B·kg-1, NaCl aggravated growth inhibition caused by boron. At 100 mg B·kg-1, however, NaCl alleviated the inhibition caused by boron. The combined stress of boron and NaCl significantly increased the root to shoot ratio of wheat. NaCl inhibited the uptake of boron by wheat. It suggests that under severe boron stress, NaCl is able to alleviate boron toxicity in wheat by increasing root to shoot ratio and reducing boron uptake.

Study of ceramic mixed boron element as a neutron shielding

International Nuclear Information System (INIS)

Ismail Mustapha; Mohd Reusmaazran Yusof; Md Fakarudin Ab Rahman; Nor Paiza Mohamad Hasan; Samihah Mustaffha; Yusof Abdullah; Mohamad Rabaie Shari; Airwan Affandi Mahmood; Nurliyana Abdullah; Hearie Hassan

2012-01-01

Shielding upon radiation should not be underestimated as it can causes hazard to health. Precautions on the released of radioactive materials should be well concerned and considered. Therefore, the combination of ceramic and boron make them very useful for shielding purpose in areas of low and intermediate neutron. A six grades of ceramic tile have been produced namely IMN05 - 5 % boron, IMN06 - 6 % boron, IMN07 - 7 % boron, IMN08 - 8 % boron, IMN09 - 9 % boron, IMN10 - 10 % boron from mixing, press and sintered process. Boron is a material that capable of absorbing and capturing neutron, so that neutron and gamma test were conducted to analyze the effectiveness of boron material in combination with ceramic as shielding. From the finding, percent reduction number of count per minute shows the ceramic tiles are capable to capture neutron. Apart from all the percentage of boron used, 10 % is the most effective shields since the percent reduction indicating greater neutron captured increased. (author)

Structural modifications induced by ion irradiation and temperature in boron carbide B{sub 4}C

Energy Technology Data Exchange (ETDEWEB)

Victor, G., E-mail: g.victor@ipnl.in2p3.fr [Institut de Physique Nucléaire de Lyon (IPNL), Université Lyon 1, CNRS/IN2P3, 4 rue Enrico Fermi, 69622 Villeurbanne Cedex (France); Pipon, Y.; Bérerd, N. [Institut de Physique Nucléaire de Lyon (IPNL), Université Lyon 1, CNRS/IN2P3, 4 rue Enrico Fermi, 69622 Villeurbanne Cedex (France); Institut Universitaire de Technologie (IUT) Lyon-1, Université Claude Bernard Lyon 1, 69622 Villeurbanne Cedex (France); Toulhoat, N. [Institut de Physique Nucléaire de Lyon (IPNL), Université Lyon 1, CNRS/IN2P3, 4 rue Enrico Fermi, 69622 Villeurbanne Cedex (France); CEA-DEN, Saclay, 91191 Gif-sur-Yvette (France); Moncoffre, N. [Institut de Physique Nucléaire de Lyon (IPNL), Université Lyon 1, CNRS/IN2P3, 4 rue Enrico Fermi, 69622 Villeurbanne Cedex (France); Djourelov, N. [Institute for Nuclear Research and Nuclear Energy, Bulgarian Academy of Sciences, 72 Tzarigradsko chaussee blvd, BG-1784 Sofia (Bulgaria); ELI-NP, IFIN-HH, 30 Reactorului Str, MG-6 Bucharest-Magurele (Romania); Miro, S. [CEA-DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Baillet, J. [Institut de Physique Nucléaire de Lyon (IPNL), Université Lyon 1, CNRS/IN2P3, 4 rue Enrico Fermi, 69622 Villeurbanne Cedex (France); Pradeilles, N.; Rapaud, O.; Maître, A. [SPCTS, UMR CNRS 7315, Centre Européen de la céramique, University of Limoges (France); Gosset, D. [CEA, Saclay, DMN-SRMA-LA2M, 91191 Gif-sur-Yvette (France)

2015-12-15

Already used as neutron absorber in the current French nuclear reactors, boron carbide (B{sub 4}C) is also considered in the future Sodium Fast Reactors of the next generation (Gen IV). Due to severe irradiation conditions occurring in these reactors, it is of primary importance that this material presents a high structural resistance under irradiation, both in the ballistic and electronic damage regimes. Previous works have shown an important structural resistance of boron carbide even at high neutron fluences. Nevertheless, the structural modification mechanisms due to irradiation are not well understood. Therefore the aim of this paper is to study structural modifications induced in B{sub 4}C samples in different damage regimes. The boron carbide pellets were shaped and sintered by using spark plasma sintering method. They were then irradiated in several conditions at room temperature or 800 °C, either by favoring the creation of ballistic damage (between 1 and 3 dpa), or by favoring the electronic excitations using 100 MeV swift iodine ions (S{sub e} ≈ 15 keV/nm). Ex situ micro-Raman spectroscopy and Doppler broadening of annihilation radiation technique with variable energy slow positrons were coupled to follow the evolution of the B{sub 4}C structure under irradiation.

Boron tolerance in NS wheat lines

Directory of Open Access Journals (Sweden)

Brdar Milka

2006-01-01

Full Text Available Boron is an essential micronutrient for higher plants. Present in excessive amounts boron becomes toxic and can limit plant growth and yield. Suppression of root growth is one of the symptoms of boron toxicity in wheat. This study was undertaken to investigate the response of 10 perspective NS lines of wheat to high concentrations of boron. Analysis of root growth was done on young plants, germinated and grown in the presence of different concentrations of boric acid (0, 50,100 and 150 mg/1. Significant differences occurred between analyzed genotypes and treatments regarding root length. Average suppression of root growth was between 11,6 and 34,2%, for line NS 252/02 are even noted 61,4% longer roots at treatments in relation to the control. Lines with mean suppression of root growth less than 20% (NS 101/02, NS 138/01, NS 53/03 and NS 73/02 may be considered as boron tolerant. Spearmans coefficients showed high level of agreement regarding rang of root length for genotypes treated with 100 and 150 mg H3BO3/l.

Boron: out of the sky and onto the ground

International Nuclear Information System (INIS)

Kuehl, D.K.

1975-01-01

Now an accepted, engineered material for aerospace applications, boron is taking its place on the ground. Both current production applications, prototype (development) applications, and speculative applications abound. In the leisure product market, boron epoxy or boron aluminum has been used or tried in golf clubs (in combination with graphite epoxy or to reinforce aluminum or steel), in tennis racquets, in bicycles, racing shells, skis and skipoles, bows and arrows, and others. In the industrial area, boron has been used to reduce fatigue, increase stiffness, or for its abrasive properties. Textile machinery, honing tools, and cut off wheels or saws are among the applications. In the medical field, prosthetics and orthotic braces, wheel chairs, canes, and crutches are all good applications for boron. Applications for boron in transportation, construction, and heavy industry are also possible. The volume of boron used in these applications could have a major impact on prices, making boron composite parts cost competitive with conventional materials. (U.S.)

Modeling of 1-D Nanowires and analyzing their Hydrogen and ...

Indian Academy of Sciences (India)

SUDIP PAN

aDepartment of Chemistry and Center for Theoretical Studies, Indian Institute of Technology Kharagpur, ... is due to the electron deficient nature of boron. In the ... molecular form.16,17 Numerous varieties of molecular ..... Matter Mater. Phys.

Soft X-ray angle-resolved photoemission spectroscopy of heavily boron-doped superconducting diamond films

Directory of Open Access Journals (Sweden)

T. Yokoya, T. Nakamura, T. Matushita, T. Muro, H. Okazaki, M. Arita, K. Shimada, H. Namatame, M. Taniguchi, Y. Takano, M. Nagao, T. Takenouchi, H. Kawarada and T. Oguchi

2006-01-01

Full Text Available We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES of microwave plasma-assisted chemical vapor deposition diamond films with different B concentrations in order to study the origin of the metallic behavior of superconducting diamond. SXARPES results clearly show valence band dispersions with a bandwidth of ~23 eV and with a top of the valence band at gamma point in the Brillouin zone, which are consistent with the calculated valence band dispersions of pure diamond. Boron concentration-dependent band dispersions near the Fermi level (EF exhibit a systematic shift of EF, indicating depopulation of electrons due to hole doping. These SXARPES results indicate that diamond bands retain for heavy boron doping and holes in the diamond band are responsible for the metallic states leading to superconductivity at low temperature. A high-resolution photoemission spectroscopy spectrum near EF of a heavily boron-doped diamond superconductor is also presented.

Evolution of magnetism by rolling up hexagonal boron nitride nanosheets tailored with superparamagnetic nanoparticles.

Science.gov (United States)

Hwang, Da Young; Choi, Kyoung Hwan; Park, Jeong Eon; Suh, Dong Hack

2017-02-01

Controlling tunable properties by rolling up two dimensional nanomaterials is an exciting avenue for tailoring the electronic and magnetic properties of materials at the nanoscale. We demonstrate the tailoring of a magnetic nanocomposite through hybridization with magnetic nanomaterials using hexagonal boron nitride (h-BN) templates as an effective way to evolve magnetism for the first time. Boron nitride nanosheets exhibited their typical diamagnetism, but rolled-up boron nitride sheets (called nanoscrolls) clearly have para-magnetism in the case of magnetic susceptibility. Additionally, the Fe 3 O 4 NP sample shows a maximum ZFC curve at about 103 K, which indicates well dispersed superparamagnetic nanoparticles. The ZFC curve for the h-BN-Fe 3 O 4 NP scrolls exhibited an apparent rounded maximum blocking temperature at 192 K compared to the Fe 3 O 4 NPs, leading to a dramatic increase in T B . These magnetic nanoscroll derivatives are remarkable materials and should be suitable for high-performance composites and nano-, medical- and electromechanical-devices.

Mass-spectrometric study of boron derivatives of fluorinated β-diketones

International Nuclear Information System (INIS)

Lozinskij, M.O.; Fialkov, Yu.A.; Khomenko, V.S.; Rasshinina, T.A.

1986-01-01

A series of complexes of fluorinated β-diketones with boron difluoride is synthesized. Ways of their fragmentation and stability at electron collision are determined. Specific decay of perfluorinated and adamantane groups followed by formation of new β-diketonate ions of linear or cyclic structure is characteristic of the investigated complexes in a gas phase. Possibility of trapping of hydrogen atoms by β-diketonate ions in a gaseous phase is detected

Feasibility study of SMART core with soluble boron

International Nuclear Information System (INIS)

Kim, Kang Seog; Lee, Chung Chan; Zee, Sung Quun

2000-11-01

The excess reactivity of SMART core without soluble boron is effectively controlled by 49 CEDM. We suggest another method to control the core excess reactivity using both the checkerboard type of 25 CEDM and soluble boron and perform a feasibility calculation. The soluble boron operation is categorized into the on-line and the off-line mechanisms. The former is to successively control the boron concentration according to the excess reactivity during operation and the latter is to add and change some soluble boron during refueling and repairing. Since the on-line soluble boron control system of SMART is conceptually identical to that of the commercial pressurized water reactor, we did not perform the analysis. Since the soluble boron in the complete off-line system increases the moderator temperature coefficient, the reactivity defect between hot and cold moderator temperature is decreased. However, the decrease of the reactivity is not big to satisfy the core reactivity limits. When using 25 CEDM, the possible mechanism is to control the excess reactivity by both control rod and on-line boron control mechanism between cold and hot zero power and by only control rod at hot full power. We selected the loading pattern satisfying the requirement in the view of nuclear design

Determination of isotopic composition of boron in boron carbide by TIMS and PIGE: an inter-comparison study

International Nuclear Information System (INIS)

Sasibhushan, K.; Rao, R.M.; Parab, A.R.; Alamelu, D.; Aggarwal, S.K.; Acharya, R.; Chhillar, S.; Pujari, P.K.

2015-01-01

The paper reports a comparison of results on the determination of isotopic composition of boron in boron carbide (B 4 C) samples by Thermal Ionisation Mass Spectrometry (TIMS) and Particle Induced Gamma ray Spectrometry (PIGE). B 4 C samples having varying boron isotopic composition (natural, enriched with respect to 10 B) and their synthetic mixtures) have been analysed by both the techniques. The 10 B atom% was found to be in the range of 20-67%. (author)

Graphite and boron carbide composites made by hot-pressing

International Nuclear Information System (INIS)

Miyazaki, K.; Hagio, T.; Kobayashi, K.

1981-01-01

Composites consisting of graphite and boron carbide were made by hot-pressing mixed powders of coke carbon and boron carbide. The change of relative density, mechanical strength and electrical resistivity of the composites and the X-ray parameters of coke carbon were investigated with increase of boron carbide content and hot-pressing temperature. From these experiments, it was found that boron carbide powder has a remarkable effect on sintering and graphitization of coke carbon powder above the hot-pressing temperature of 2000 0 C. At 2200 0 C, electrical resistivity of the composite and d(002) spacing of coke carbon once showed minimum values at about 5 to 10 wt% boron carbide and then increased. The strength of the composite increased with increase of boron carbide content. It was considered that some boron from boron carbide began to diffuse substitutionally into the graphite structure above 2000 0 C and densification and graphitization were promoted with the diffusion of boron. Improvements could be made to the mechanical strength, density, oxidation resistance and manufacturing methods by comparing with the properties and processes of conventional graphites. (author)

Effects of heat treatment on the microstructure of amorphous boron carbide coating deposited on graphite substrates by chemical vapor deposition

International Nuclear Information System (INIS)

Li Siwei; Zeng Bin; Feng Zude; Liu Yongsheng; Yang Wenbin; Cheng Laifei; Zhang Litong

2010-01-01

A two-layer boron carbide coating is deposited on a graphite substrate by chemical vapor deposition from a CH 4 /BCl 3 /H 2 precursor mixture at a low temperature of 950 o C and a reduced pressure of 10 KPa. Coated substrates are annealed at 1600 o C, 1700 o C, 1800 o C, 1900 o C and 2000 o C in high purity argon for 2 h, respectively. Structural evolution of the coatings is explored by electron microscopy and spectroscopy. Results demonstrate that the as-deposited coating is composed of pyrolytic carbon and amorphous boron carbide. A composition gradient of B and C is induced in each deposition. After annealing, B 4 C crystallites precipitate out of the amorphous boron carbide and grow to several hundreds nanometers by receiving B and C from boron-doped pyrolytic carbon. Energy-dispersive spectroscopy proves that the crystallization is controlled by element diffusion activated by high temperature annealing, after that a larger concentration gradient of B and C is induced in the coating. Quantified Raman spectrum identifies a graphitization enhancement of pyrolytic carbon. Transmission electron microscopy exhibits an epitaxial growth of B 4 C at layer/layer interface of the annealed coatings. Mechanism concerning the structural evolution on the basis of the experimental results is proposed.

The behavior of silicon and boron in the surface of corroded nuclear waste glasses: an EFTEM study

International Nuclear Information System (INIS)

Buck, E. C.; Smith, K. L.; Blackford, M. G.

1999-01-01

Using electron energy-loss filtered transmission electron microscopy (EFTEM), we have observed the formation of silicon-rich zones on the corroded surface of a West Valley (WV6) glass. This layer is approximately 100-200 nm thick and is directly underneath a precipitated smectite clay layer. Under conventional (C)TEM illumination, this layer is invisible; indeed, more commonly used analytical techniques, such as x-ray energy dispersive spectroscopy (EDS), have failed to describe fully the localized changes in the boron and silicon contents across this region. Similar silicon-rich and boron-depleted zones were not found on corroded Savannah River Laboratory (SRL) borosilicate glasses, including SRL-EA and SRL-51, although they possessed similar-looking clay layers. This study demonstrates a new tool for examining the corroded surfaces of materials

Boron-Based Hydrogen Storage: Ternary Borides and Beyond

Energy Technology Data Exchange (ETDEWEB)

Vajo, John J. [HRL Laboratories, LLC, Malibu, CA (United States)

2016-04-28

DOE continues to seek reversible solid-state hydrogen materials with hydrogen densities of ≥11 wt% and ≥80 g/L that can deliver hydrogen and be recharged at moderate temperatures (≤100 °C) and pressures (≤100 bar) enabling incorporation into hydrogen storage systems suitable for transportation applications. Boron-based hydrogen storage materials have the potential to meet the density requirements given boron’s low atomic weight, high chemical valance, and versatile chemistry. However, the rates of hydrogen exchange in boron-based compounds are thus far much too slow for practical applications. Although contributing to the high hydrogen densities, the high valance of boron also leads to slow rates of hydrogen exchange due to extensive boron-boron atom rearrangements during hydrogen cycling. This rearrangement often leads to multiple solid phases occurring over hydrogen release and recharge cycles. These phases must nucleate and react with each other across solid-solid phase boundaries leading to energy barriers that slow the rates of hydrogen exchange. This project sought to overcome the slow rates of hydrogen exchange in boron-based hydrogen storage materials by minimizing the number of solid phases and the boron atom rearrangement over a hydrogen release and recharge cycle. Two novel approaches were explored: 1) developing matched pairs of ternary borides and mixed-metal borohydrides that could exchange hydrogen with only one hydrogenated phase (the mixed-metal borohydride) and only one dehydrogenated phase (the ternary boride); and 2) developing boranes that could release hydrogen by being lithiated using lithium hydride with no boron-boron atom rearrangement.

Tuning the p-type Schottky barrier in 2D metal/semiconductor interface:boron-sheet on MoSe2, and WSe2

Science.gov (United States)

Couto, W. R. M.; Miwa, R. H.; Fazzio, A.

2017-10-01

Van der Waals (vdW) metal/semiconductor heterostructures have been investigated through first-principles calculations. We have considered the recently synthesized borophene (Mannix et al 2015 Science 350 1513), and the planar boron sheets (S1 and S2) (Feng et al 2016 Nat. Chem. 8 563) as the 2D metal layer, and the transition metal dichalcogenides (TMDCs) MoSe2, and WSe2 as the semiconductor monolayer. We find that the energetic stability of those 2D metal/semiconductor heterojunctions is mostly ruled by the vdW interactions; however, chemical interactions also take place in borophene/TMDC. The electronic charge transfer at the metal/semiconductor interface has been mapped, where we find a a net charge transfer from the TMDCs to the boron sheets. Further electronic structure calculations reveal that the metal/semiconductor interfaces, composed by planar boron sheets S1 and S2, present a p-type Schottky barrier which can be tuned to a p-type ohmic contact by an external electric field.

Analysis of mean lifetime for capture of neutrons in boron-loaded plastic scintillators

Energy Technology Data Exchange (ETDEWEB)

Kamykowski, E.A. (Grumman Corp., Bethpage, NY (USA). Research Center)

1990-12-20

The commercial availabiltiy of boron-loaded organic scintillators has led to the development of neutron detectors that operate as ''electronically'' black, totally absorbing spectrometers. The key to the enhanced spectroscopy is the delayed capture of nearly thermalized neutrons by {sup 10}B that can occur within a few microseconds after the energy pulse from prompt proton recoils. Accurate information regarding the mean lifetime is important for correct setting of the timing logic of the detection system to obtain good neutron detection efficiency with a low chance coincidence rate. In this paper we present an analysis of the mean lifetime for neutron capture for the boron-loaded plastic BC454. Measurements of the capture time constant obtained with a 7.62 cm diameter, 10.16 cm long detector are compared with values computed with the time-dependent Monte Carlo neutron transport code MCNP. Additional analyses using MCNP examine the dependence of the mean lifetime on the boron concentration, the detector's dimensions and the incident neutron energy. (orig.).

Moire superlattice effects in graphene/boron-nitride van der Waals heterostructures

Energy Technology Data Exchange (ETDEWEB)

Wallbank, John R.; Chen, Xi; Fal' ko, Vladimir I. [Department of Physics, Lancaster University, Lancaster (United Kingdom); Mucha-Kruczynski, Marcin [Department of Physics, University of Bath (United Kingdom)

2015-06-15

Van der Waals heterostructures of graphene and hexagonal boron nitride feature a moire superlattice for graphene's Dirac electrons. Here, we review the effects generated by this superlattice, including a specific miniband structure featuring gaps and secondary Dirac points, and a fractal spectrum of magnetic minibands known as Hofstadter's butterfly. (copyright 2015 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Electronic structures of B 2p and C 2p levels in boron-doped diamond films studied using soft x-ray absorption and emission spectroscopy

Science.gov (United States)

Nakamura, Jin; Kabasawa, Eiki; Yamada, Nobuyoshi; Einaga, Yasuaki; Saito, Daisuke; Isshiki, Hideo; Yugo, Shigemi; Perera, Rupert C. C.

2004-12-01

X-ray absorption (XAS) and emission (XES) spectroscopy near B K and C K edges have been performed on metallic ( ˜0.1at.% B, B-diamond) and semiconducting ( ˜0.03at.% B and N, BN-diamond) doped diamond films. Both B K XAS and XES spectra show a metallic partial density of states (PDOS) with the Fermi energy of 185.3eV , and there is no apparent boron-concentration dependence in contrast to the different electric property. In C K XAS spectrum of B-diamond, the impurity state ascribed to boron is clearly observed near the Fermi level. The Fermi energy is found to be almost same with the top of the valence band of nondoped diamond: EV=283.9eV . C K XAS of BN-diamond shows both the B-induced shallow level and N-induced deep and broad levels as the in-gap states, in which the shallow level is in good agreement with the activation energy (Ea=0.37eV) estimated from the temperature dependence of the conductivity; namely, the change in C2p PDOS of impurity-induced metallization is directly observed. The electric property of this diamond is ascribed mainly to the electronic structure of C2p near the Fermi level. The observed XES spectra are compared with the discrete variational Xα ( DVXα ) cluster calculation. The DVXα result supports the strong hybridization between B2p and C2p observed in XAS and XES spectra, and suggests that the small amount of boron (⩽0.1at.%) in diamond occupies the substitutional site rather than interstitial site.

Modeling of interstitial diffusion of ion-implanted boron

International Nuclear Information System (INIS)

Velichko, O.I.; Knyazheva, N.V.

2009-01-01

A model of the interstitial diffusion of ion-implanted boron during rapid thermal annealing of silicon layers previously amorphized by implantation of germanium has been proposed. It is supposed that the boron interstitials are created continuously during annealing due to generation, dissolution, or rearrangement of the clusters of impurity atoms which are formed in the ion-implanted layers with impurity concentration above the solubility limit. The local elastic stresses arising due to the difference of boron atomic radius and atomic radius of silicon also contribute to the generation of boron interstitials. A simulation of boron redistribution during thermal annealing for 60 s at a temperature of 850 C has been carried out. The calculated profile agrees well with the experimental data. A number of the parameters of interstitial diffusion have been derived. In particular, the average migration length of nonequilibrium boron interstitials is equal to 12 nm. It was also obtained that approximately 1.94% of boron atoms were converted to the interstitial sites, participated in the fast interstitial migration, and then became immobile again transferring into a substitutional position or forming the electrically inactive complexes with crystal lattice defects. (authors)

Boron exposure through drinking water during pregnancy and birth size.

Science.gov (United States)

Igra, Annachiara Malin; Harari, Florencia; Lu, Ying; Casimiro, Esperanza; Vahter, Marie

2016-10-01

Boron is a metalloid found at highly varying concentrations in soil and water. Experimental data indicate that boron is a developmental toxicant, but the few human toxicity data available concern mostly male reproduction. To evaluate potential effects of boron exposure through drinking water on pregnancy outcomes. In a mother-child cohort in northern Argentina (n=194), 1-3 samples of serum, whole blood and urine were collected per woman during pregnancy and analyzed for boron and other elements to which exposure occurred, using inductively coupled plasma mass spectrometry. Infant weight, length and head circumference were measured at birth. Drinking water boron ranged 377-10,929μg/L. The serum boron concentrations during pregnancy ranged 0.73-605μg/L (median 133μg/L) and correlated strongly with whole-blood and urinary boron, and, to a lesser extent, with water boron. In multivariable-adjusted linear spline regression analysis (non-linear association), we found that serum boron concentrations above 80μg/L were inversely associated with birth length (B-0.69cm, 95% CI -1.4; -0.024, p=0.043, per 100μg/L increase in serum boron). The impact of boron appeared stronger when we restricted the exposure to the third trimester, when the serum boron concentrations were the highest (0.73-447μg/L). An increase in serum boron of 100μg/L in the third trimester corresponded to 0.9cm shorter and 120g lighter newborns (p=0.001 and 0.021, respectively). Considering that elevated boron concentrations in drinking water are common in many areas of the world, although more screening is warranted, our novel findings warrant additional research on early-life exposure in other populations. Copyright © 2016 The Authors. Published by Elsevier Ltd.. All rights reserved.

Defect formation in oxygen- and boron- implanted MOS structures after gamma irradiation

CERN Document Server

Kaschieva, S; Skorupa, W

2003-01-01

The effect of gamma irradiation on the interface states of ion-implanted MOS structures is studied by means of the thermally stimulated charge method. 10-keV oxygen- or boron- (O sup + or B sup +) implanted samples are gamma-irradiated with sup 6 sup 0 Co. Gamma irradiation creates electron levels at the SiSiO sub 2 interface of the samples in a different way depending on the type of the previously implanted atoms (O sup + or B sup +). The results demonstrate that the concentration of the shallower levels (in the silicon band gap) of oxygen-implanted samples increases more effectively after gamma irradiation. The same irradiation conditions increase more intensively the concentration of the deeper levels (in the silicon band gap) of boron-implanted samples. (orig.)

Electron-capture delayed fission properties of neutron-deficient einsteinium nuclei

International Nuclear Information System (INIS)

Shaughnessy, Dawn A.

2000-01-01

Electron-capture delayed fission (ECDF) properties of neutron-deficient einsteinium isotopes were investigated using a combination of chemical separations and on-line radiation detection methods. 242 Es was produced via the 233 U( 14 N,5n) 242 Es reaction at a beam energy of 87 MeV (on target) in the lab system, and was found to decay with a half-life of 11 ± 3 seconds. The ECDF of 242 Es showed a highly asymmetric mass distribution with an average pre-neutron emission total kinetic energy (TKE) of 183 ± 18 MeV. The probability of delayed fission (P DF ) was measured to be 0.006 ± 0.002. In conjunction with this experiment, the excitation functions of the 233 U( 14 N,xn) 247-x Es and 233 U( 15 N,xn) 248-x Es reactions were measured for 243 Es, 244 Es and 245 Es at projectile energies between 80 MeV and 100 MeV

Tumor cell killing effect of boronated dipeptide. Boromethylglycylphenylalanine on boron neutron capture therapy for malignant brain tumors

International Nuclear Information System (INIS)

Takagaki, Masao; Ono, Koji; Masunaga, Shinichiro; Kinashi, Yuko; Kobayashi, Toru; Oda, Yoshifumi; Kikuchi, Haruhiko; Spielvogel, B.F.

1994-01-01

The killing effect of Boron Neutron Capture Therapy; BNCT, is dependant on the boron concentration ratio of tumor to normal brain (T/N ratio), and also that of tumor to blood (T/B ratio). The clinical boron carrier of boro-captate (BSH) showed the large T/N ratio of ca. 8, however the T/B ratio was around 1, which indicated nonselective accumulation into tumor. Indeed high boron concentration of blood restrict the neutron irradiation dose in order to circumvent the normal endothelial damage, especially in the case of deeply seated tumor. Phenylalanine analogue of para borono-phenylalanine (BPA) is an effective boron carrier on BNCT for malignant melanoma. For the BNCT on brain tumors, however, BPA concentration in normal brain was reported to be intolerably high. In order to improve the T/N ratio of BPA in brain, therefore, a dipeptide of boromethylglycylphenylalanine (BMGP) was synthesized deriving from trimethylglycine conjugated with BPA. It is expected to be selectively accumulated into tumor with little uptake into normal brain. Because a dipeptide might not pass through the normal blood brain barrier (BBB). Its killing effect on cultured glioma cell, T98G, and its distribution in rat brain bearing 9L glioma have been investigated in this paper. The BNCT effect of BMGP on cultured cells was nearly triple in comparison with DL-BPA. The neutron dose yielding 1% survival ratio were 7x10 12 nvt for BMGP and 2x10 13 nvt for BPA respectively on BNCT after boron loading for 16 hrs in the same B-10 concentration of 20ppm. Quantitative study of boron concentration via the α-auto radiography and the prompt gamma ray assay on 9L brain tumor rats revealed that T/N ratio and T/B ratio are 12.0 and 3.0 respectively. Those values are excellent for BNCT use. (author)

Influence of Boron on the Creep Behavior and the Microstructure of Particle Reinforced Aluminum Matrix Composites

Directory of Open Access Journals (Sweden)

Steve Siebeck

2018-02-01

Full Text Available The reinforcement of aluminum alloys with particles leads to the enhancement of their mechanical properties at room temperature. However, the creep behavior at elevated temperatures is often negatively influenced. This raises the question of how it is possible to influence the creep behavior of this type of material. Within this paper, selected creep and tensile tests demonstrate the beneficial effects of boron on the properties of precipitation-hardenable aluminum matrix composites (AMCs. The focus is on the underlying microstructure behind this effect. For this purpose, boron was added to AMCs by means of mechanical alloying. Comparatively higher boron contents than in steel are investigated in order to be able to record their influence on the microstructure including the formation of potential new phases as well as possible. While the newly formed phase Al3BC can be reliably detected by X-ray diffraction (XRD, it is difficult to obtain information about the phase distribution by means of scanning electron microscopy (SEM and scanning transmission electron microscopy (STEM investigations. An important contribution to this is finally provided by the investigation using Raman microscopy. Thus, the homogeneous distribution of finely scaled Al3BC particles is detectable, which allows conclusions about the microstructure/property relationship.

Synthesis and plant growth modulation of tris (2-hydroxyethylammonium boron-containing compounds

Directory of Open Access Journals (Sweden)

I. A. Dain

2017-01-01

Full Text Available To develop boron deficiency treatment composite preparations for significant agricultural crops tris(2-hydroxyethylammonium complexes containing boron and lower dicarboxylic acid (C2-C4 anions were synthesized and characterized. It was shown, that formation and stabilization of complexes containing a greater number of carbon atoms or intermolecular ?- conjugation (e.g. maleic acid is related to space and electrostatical hurdles, respectively. According to NMR spectroscopy, in case of tartaric acid complex vicinal hydroxyl bounding with boron was found. The preexisted boratrane azeotropic water distillation synthetic method was modernized (videlicet optimal solvent mixture and raw materials ratio were chosen. Various triethanolamine and boric acid reaction mediums, i.e. nonpolar (toluene, polar aprotic (dimethylsulphoxide, protic (isopropanol, 2-butanol solvents and their mixtures, were tested. In the issue optimal synthetic method, utilizing isopropanol/2-butanol mixture in ratio 3 to 1, was elaborated. In comparison to standard azeotropic water-isopropanol distillation the yield of the process was exceeded to 12.08% (from 82.70% to 94.78% and low impurity concentrations in product was committed. Besides alternative laboratory solvent-free boratrane synthetic method was developed and optimal rinsing fluid composition was found. During agricultural experiments substance effectiveness in germination power and germinability of beet seeds and productivity of sugar beet was studied. Boratrane was found to be slightly effective for seed germinability stimulation. Boratrane-containing composition (i.e. boratrane + tris(2-hydroxyethylammonium o-cresoxyacetate + 1-chloromethylsilatrane was shown to have the best results in apical root length, average root-crop and average plant weigth increasing in comparison with the control.

From boron analogues of amino acids to boronated DNA: potential new pharmaceuticals and neutron capture agents

International Nuclear Information System (INIS)

Spielvogel, B.F.; Sood, Anup; Duke Univ., Durham, NC; Shaw, B.R.; Hall, I.H.

1991-01-01

Isoelectronic and isostructural boron analogues of the α-amino acids ranging from simple glycine analogues such as H 3 NBH 2 COOH and Me 2 NHBH 2 COOH to alanine analogues have been synthesised. A diverse variety of analogues, including precursors and derivatives (such as peptides) have potent pharmacological activity, including anticancer, antiinflammatory, analgesic, and hypolipidemic activity in animal model studies and in vitro cell cultures. Boronated nucleosides and (oligo)nucleotides, synthetic oligonucleotide analogues of ''antisense'' agents interact with a complementary nucleic acid sequence blocking the biological effect of the target sequence. Nucleosides boronated on the pyrimidine and purine bases have been prepared. It has been established that an entirely new class of nucleic acid derivatives is feasible in which one of the non-bridging oxygens in the internucleotide phosphodiester linkage can be replaced by an isoelectronic analogue, the borane group, (BH 3 ). The boronated oligonucleotides can be viewed as hybrids of the normal oxygen oligonucleotides and the methylphosphonate oligonucleotides. (author)

The mechanical design of hybrid graphene/boron nitride nanotransistors: Geometry and interface effects

Science.gov (United States)

Einalipour Eshkalak, Kasra; Sadeghzadeh, Sadegh; Jalaly, Maisam

2018-02-01

From electronic point of view, graphene resembles a metal or semi-metal and boron nitride is a dielectric material (band gap = 5.9 eV). Hybridization of these two materials opens band gap of the graphene which has expansive applications in field-effect graphene transistors. In this paper, the effect of the interface structure on the mechanical properties of a hybrid graphene/boron nitride was studied. Young's modulus, fracture strain and tensile strength of the models were simulated. Three likely types (hexagonal, octagonal and decagonal) were found for the interface of hybrid sheet after relaxation. Although Csbnd B bonds at the interface were indicated to result in more promising electrical properties, nitrogen atoms are better choice for bonding to carbon for mechanical applications.

Boron Neutron Capture Therapy (BCNT) for the Treatment of Liver Metastases: Biodistribution Studies of Boron Compounds in an Experimental Model

Energy Technology Data Exchange (ETDEWEB)

Marcela A. Garabalino; Andrea Monti Hughes; Ana J. Molinari; Elisa M. Heber; Emiliano C. C. Pozzi; Maria E. Itoiz; Veronica A. Trivillin; Amanda E. Schwint; Jorge E. Cardoso; Lucas L. Colombo; Susana Nievas; David W. Nigg; Romina F. Aromando

2011-03-01

Abstract We previously demonstrated the therapeutic efficacy of different boron neutron capture therapy (BNCT) protocols in an experimental model of oral cancer. BNCT is based on the selective accumulation of 10B carriers in a tumor followed by neutron irradiation. Within the context of exploring the potential therapeutic efficacy of BNCT for the treatment of liver metastases, the aim of the present study was to perform boron biodistribution studies in an experimental model of liver metastases in rats. Different boron compounds and administration conditions were assayed to determine which administration protocols would potentially be therapeutically useful in in vivo BNCT studies at the RA-3 nuclear reactor. A total of 70 BDIX rats were inoculated in the liver with syngeneic colon cancer cells DHD/K12/TRb to induce the development of subcapsular tumor nodules. Fourteen days post-inoculation, the animals were used for biodistribution studies. We evaluated a total of 11 administration protocols for the boron compounds boronophenylalanine (BPA) and GB-10 (Na210B10H10), alone or combined at different dose levels and employing different administration routes. Tumor, normal tissue, and blood samples were processed for boron measurement by atomic emission spectroscopy. Six protocols proved potentially useful for BNCT studies in terms of absolute boron concentration in tumor and preferential uptake of boron by tumor tissue. Boron concentration values in tumor and normal tissues in the liver metastases model show it would be feasible to reach therapeutic BNCT doses in tumor without exceeding radiotolerance in normal tissue at the thermal neutron facility at RA-3.

Boron concentration measurements by alpha spectrometry and quantitative neutron autoradiography in cells and tissues treated with different boronated formulations and administration protocols

International Nuclear Information System (INIS)

Bortolussi, Silva; Ciani, Laura; Postuma, Ian; Protti, Nicoletta; Luca Reversi,; Bruschi, Piero; Ferrari, Cinzia; Cansolino, Laura; Panza, Luigi; Ristori, Sandra; Altieri, Saverio

2014-01-01

The possibility to measure boron concentration with high precision in tissues that will be irradiated represents a fundamental step for a safe and effective BNCT treatment. In Pavia, two techniques have been used for this purpose, a quantitative method based on charged particles spectrometry and a boron biodistribution imaging based on neutron autoradiography. A quantitative method to determine boron concentration by neutron autoradiography has been recently set-up and calibrated for the measurement of biological samples, both solid and liquid, in the frame of the feasibility study of BNCT. This technique was calibrated and the obtained results were cross checked with those of α spectrometry, in order to validate them. The comparisons were performed using tissues taken form animals treated with different boron administration protocols. Subsequently the quantitative neutron autoradiography was employed to measure osteosarcoma cell samples treated with BPA and with new boronated formulations. - Highlights: • A method for 10B measurements in samples based on neutron autoradiography was developed. • The results were compared with those of alpha spectrometry applied on tissue and cell samples. • Boronated liposomes were developed and administered to osteosarcoma cell cultures. • Neutron autoradiography was employed to measure boron concentration due to liposomes. • Liposomes were proved to be more effective in concentrating boron in cells than BPA

Growth of boron doped hydrogenated nanocrystalline cubic silicon carbide (3C-SiC) films by Hot Wire-CVD

Energy Technology Data Exchange (ETDEWEB)

Pawbake, Amit [School of Energy Studies, Savitribai Phule Pune University, Pune 411 007 (India); Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Mayabadi, Azam; Waykar, Ravindra; Kulkarni, Rupali; Jadhavar, Ashok [School of Energy Studies, Savitribai Phule Pune University, Pune 411 007 (India); Waman, Vaishali [Modern College of Arts, Science and Commerce, Shivajinagar, Pune 411 005 (India); Parmar, Jayesh [Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Bhattacharyya, Somnath [Department of Metallurgical and Materials Engineering, IIT Madras, Chennai 600 036 (India); Ma, Yuan‐Ron [Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan (China); Devan, Rupesh; Pathan, Habib [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Jadkar, Sandesh, E-mail: sandesh@physics.unipune.ac.in [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India)

2016-04-15

Highlights: • Boron doped nc-3C-SiC films prepared by HW-CVD using SiH{sub 4}/CH{sub 4}/B{sub 2}H{sub 6}. • 3C-Si-C films have preferred orientation in (1 1 1) direction. • Introduction of boron into SiC matrix retard the crystallanity in the film structure. • Film large number of SiC nanocrystallites embedded in the a-Si matrix. • Band gap values, E{sub Tauc} and E{sub 04} (E{sub 04} > E{sub Tauc}) decreases with increase in B{sub 2}H{sub 6} flow rate. - Abstract: Boron doped nanocrystalline cubic silicon carbide (3C-SiC) films have been prepared by HW-CVD using silane (SiH{sub 4})/methane (CH{sub 4})/diborane (B{sub 2}H{sub 6}) gas mixture. The influence of boron doping on structural, optical, morphological and electrical properties have been investigated. The formation of 3C-SiC films have been confirmed by low angle XRD, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), Fourier transform infra-red (FTIR) spectroscopy and high resolution-transmission electron microscopy (HR-TEM) analysis whereas effective boron doping in nc-3C-SiC have been confirmed by conductivity, charge carrier activation energy, and Hall measurements. Raman spectroscopy and HR-TEM analysis revealed that introduction of boron into the SiC matrix retards the crystallanity in the film structure. The field emission scanning electron microscopy (FE-SEM) and non contact atomic force microscopy (NC-AFM) results signify that 3C-SiC film contain well resolved, large number of silicon carbide (SiC) nanocrystallites embedded in the a-Si matrix having rms surface roughness ∼1.64 nm. Hydrogen content in doped films are found smaller than that of un-doped films. Optical band gap values, E{sub Tauc} and E{sub 04} decreases with increase in B{sub 2}H{sub 6} flow rate.

Exploiting the enantioselectivity of Baeyer-Villiger monooxygenases via boron oxidation

NARCIS (Netherlands)

Brondani, Patricia B.; Dudek, Hanna; Reis, Joel S.; Fraaije, Marco W.; Andrade, Leandro H.

2012-01-01

The enantioselective carbon-boron bond oxidation of several chiral boron-containing compounds by Baeyer-Villiger monooxygenases was evaluated. PAMO and M446G PAMO conveniently oxidized 1-phenylethyl boronate into the corresponding 1-(phenyl)ethanol (ee = 82-91%). Cyclopropyl boronic esters were also

Boronic acid-based chemical sensors for saccharides.

Science.gov (United States)

Zhang, Xiao-Tai; Liu, Guang-Jian; Ning, Zhang-Wei; Xing, Guo-Wen

2017-11-27

During the past decades, the interaction between boronic acids-functionalized sensors and saccharides is of great interest in the frontier domain of the interdiscipline concerning both biology and chemistry. Various boronic acid-based sensing systems have been developed to detect saccharides and corresponding derivatives in vitro as well as in vivo, which embrace unimolecular sensors, two-component sensing ensembles, functional assemblies, and boronic acid-loaded nanomaterials or surfaces. New sensing strategies emerge in endlessly with excellent selectivity and sensitivity. In this review, several typical sensing systems were introduced and some promising examples were highlighted to enable the deep insight of saccharides sensing on the basis of boronic acids. Copyright © 2017 Elsevier Ltd. All rights reserved.

Boron removal in radioactive liquid waste by forward osmosis membrane

Energy Technology Data Exchange (ETDEWEB)

Doo Seong Hwang; Hei Min Choi; Kune Woo Lee; Jei Kwon Moon [KAERI, Daejeon (Korea, Republic of)

2013-07-01

This study investigated the treatment of boric acid contained in liquid radioactive waste using a forward osmosis membrane. The boron permeation through the membrane depends on the type of membrane, membrane orientation, pH of the feed solution, salt and boron concentration in the feed solution, and osmotic pressure of the draw solution. The boron flux begins to decline from pH 7 and increases with an increase of the osmotic driving force. The boron flux decreases slightly with the salt concentration, but is not heavily influenced by a low salt concentration. The boron flux increases linearly with the concentration of boron. No element except for boron was permeated through the FO membrane in the multi-component system. The maximum boron flux is obtained in an active layer facing a draw solution orientation of the CTA-ES membrane under conditions of less than pH 7 and high osmotic pressure. (authors)

Características fisiológicas e crescimento de clones de eucalipto em resposta ao boro Physiological characteristics and dry matter production of eucalyptus in response to boron

Directory of Open Access Journals (Sweden)

Edson Marcio Mattiello

2009-10-01

Full Text Available A exigência para boro (B varia largamente entre e dentro das espécies vegetais. Objetivando avaliar a resposta de clones de eucalipto ao B em solução nutritiva foi realizado ensaio em casa de vegetação com oito clones. As plantas cresceram em soluções nutritivas com 0, 10, 20, 50 e 100 µmol/L de B, durante 70 dias. Na finalização do ensaio determinaram-se características fisiológicas, produção de matéria seca e teores de B no tecido vegetal. Houve resposta diferenciada dos clones à concentração de B na solução nutritiva, com máxima produção de matéria seca entre 28 e 69 µmol/L de B. Em baixas concentrações de B, pôde-se observar sintomas visuais de deficiência e, em altas concentrações, não foram observados sintomas de toxidez, porém houve redução na produção de matéria seca. A resposta do eucalipto ao B na solução nutritiva depende do clone, havendo diferenças entre eles na tolerância à deficiência e toxidez e na eficiência de utilização de B. Os clones 68 e 129 apresentaram as mais elevadas taxas de fotossíntese. O clone 3487 foi o mais responsivo ao B. Os clones 3487, 3336 e 68 foram mais sensíveis à deficiência e os clones 3281 e 1270 os mais tolerantes à deficiência. O clone 2486 foi o mais sensível à toxidez e o clone 3281 o mais tolerante. Os clones 3487, 2486 e 129 foram mais eficientes na utilização de B.Boron (B requirement for plant growth varies both within and among plant species. In order to evaluate the response of clones of eucalyptus to B in nutrient solution, an experiment was carried out under glasshouse conditions, with eight clones. Plants were grown in nutrient solutions at B concentrations of 0, 10, 20, 50 and 100 µmol/L for 70 days, after which, physiological variables, dry matter production and boron content were determined. There was a differential response of the eucalyptus clones to the concentration of boron in nutrient solution with maximum dry matter

Boron adsorption on hematite and clinoptilolite

International Nuclear Information System (INIS)

Gainer, G.M.

1993-01-01

This thesis describes experiments performed to determine the suitability of boron as a potential reactive tracer for use in saturated-zone C-well reactive tracer studies for the Yucca Mountain Project (YMP). Experiments were performed to identify the prevalent sorption mechanism of boron and to determine adsorption of boron on hematite and clinoptilolite as a function of pH. These minerals are present in the Yucca Mountain tuff in which the C-well studies will be conducted. Evaluation of this sorption mechanism was done by determining the equilibration time of boron-mineral suspensions, by measuring changes in equilibrium to titrations, and by measuring electrophoretic mobility. Experiments were performed with the minerals suspended in NaCl electrolytes of concentrations ranging from 0.1 N NaCl to 0.001 N NaCl. Experimentalconditions included pH values between 3 and 12 and temperature of about 38 degrees C

Determination of boron in amorphous alloys

Energy Technology Data Exchange (ETDEWEB)

Grazhulene, S.S.; Grossman, O.V.; Kuntscher, K.K.; Malygina, L.I.; Muller, E.N.; Telegin, G.F.

1985-10-01

In the determination of boron in amorphous alloys containingFe, Co, B, Si, Ni, and P having unusal magnetic and electrical properties, precise analysis and rapid analysis are necessary. To improve the metrological properties of the existing procedure, to find a rapid determination of boron in amorphous alloys, and to verify the accuracy of the results, in the present work the optimization of the photometric determination after extraction of the BF/sup -//sub 4/ ion pair with methylene blue has been studied, and a boron determination by flame photometry using selective methylation has been developed. The determination of boron by the flame photometric and spectrophotometric methods is shown. When a highly precise determination is needed, the spectrophotometric procedure can be used. This procedure is distinguished by its labor intensity and duration. When the need for reproducibility is less severe, the rapid flame photometric procedure is best.

Transport properties of ultrathin black phosphorus on hexagonal boron nitride

Energy Technology Data Exchange (ETDEWEB)

Doganov, Rostislav A.; Özyilmaz, Barbaros [Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, 117546 Singapore (Singapore); Department of Physics, National University of Singapore, 2 Science Drive 3, 117542 Singapore (Singapore); Graduate School for Integrative Sciences and Engineering (NGS), National University of Singapore, 28 Medical Drive, 117456 Singapore (Singapore); Koenig, Steven P.; Yeo, Yuting [Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, 117546 Singapore (Singapore); Department of Physics, National University of Singapore, 2 Science Drive 3, 117542 Singapore (Singapore); Watanabe, Kenji; Taniguchi, Takashi [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)

2015-02-23

Ultrathin black phosphorus, or phosphorene, is a two-dimensional material that allows both high carrier mobility and large on/off ratios. Similar to other atomic crystals, like graphene or layered transition metal dichalcogenides, the transport behavior of few-layer black phosphorus is expected to be affected by the underlying substrate. The properties of black phosphorus have so far been studied on the widely utilized SiO{sub 2} substrate. Here, we characterize few-layer black phosphorus field effect transistors on hexagonal boron nitride—an atomically smooth and charge trap-free substrate. We measure the temperature dependence of the field effect mobility for both holes and electrons and explain the observed behavior in terms of charged impurity limited transport. We find that in-situ vacuum annealing at 400 K removes the p-doping of few-layer black phosphorus on both boron nitride and SiO{sub 2} substrates and reduces the hysteresis at room temperature.

Olefination of Electron-Deficient Alkenes with Allyl Acetate: Stereo- and Regioselective Access to (2Z,4E)-Dienamides.

Science.gov (United States)

Li, Feifei; Yu, Chunbing; Zhang, Jian; Zhong, Guofu

2016-09-16

A Ru-catalyzed direct olefination of electron-deficient alkenes with allyl acetate via C-H bond activation is disclosed. By using N,N-disubstituted aminocarbonyl as the directing group, this external oxidant-free protocol resulted in high reaction efficiency and good stereo- and regioselectivities, which opens a novel synthetic passway for access to (Z,E)-butadiene skeletons.

Boron removal by electrocoagulation and recovery.

Science.gov (United States)

Isa, Mohamed Hasnain; Ezechi, Ezerie Henry; Ahmed, Zubair; Magram, Saleh Faraj; Kutty, Shamsul Rahman Mohamed

2014-03-15

This work investigated the removal of boron from wastewater and its recovery by electrocoagulation and hydrothermal mineralization methods respectively. The experimental design was developed using Box-Behnken Model. An initial study was performed based on four preselected variables (pH, current density, concentration and time) using synthetic wastewater. Response surface methodology (RSM) was used to evaluate the effect of process variables and their interaction on boron removal. The optimum conditions were obtained as pH 6.3, current density 17.4 mA/cm(2), and time 89 min. At these applied optimum conditions, 99.7% boron removal from an initial concentration of 10.4 mg/L was achieved. The process was effectively optimized by RSM with a desirability value of 1.0. The results showed that boron removal efficiency enhanced with increase in current density and treatment time. Removal efficiency also increased when pH was increased from 4 to 7 and subsequently decreased at pH 10. Adsorption kinetics study revealed that the reaction followed pseudo second order kinetic model; evidenced by high correlation and goodness of fit. Thermodynamics study showed that mechanism of boron adsorption was chemisorption and the reaction was endothermic in nature. Furthermore, the adsorption process was spontaneous as indicated by negative values of the adsorption free energy. Treatment of real produced water using electrocoagulation resulted in 98% boron removal. The hydrothermal mineralization study showed that borate minerals (Inyoite, Takadaite and Nifontovite) can be recovered as recyclable precipitate from electrocoagulation flocs of produced water. Copyright © 2013 Elsevier Ltd. All rights reserved.

Numerical simulation of boron injection in a BWR

Energy Technology Data Exchange (ETDEWEB)

Tinoco, Hernan, E-mail: htb@forsmark.vattenfall.s [Forsmarks Kraftgrupp AB, SE-742 03 Osthammar (Sweden); Buchwald, Przemyslaw [Reactor Technology, Royal Institute of Technology, SE-100 44 Stockholm (Sweden); Frid, Wiktor, E-mail: wiktor@reactor.sci.kth.s [Reactor Technology, Royal Institute of Technology, SE-100 44 Stockholm (Sweden)

2010-02-15

The present study constitutes a first step to understand the process of boron injection, transport and mixing in a BWR. It consists of transient CFD simulations of boron injection in a model of the downcomer of Forsmark's Unit 3 containing about 6 million elements. The two cases studied are unintentional start of boron injection under normal operation and loss of offsite power with partial ATWS leaving 10% of the core power uncontrolled. The flow conditions of the second case are defined by means of an analysis with RELAP5, assuming boron injection start directly after the first ECCS injection. Recent publications show that meaningful conservative results may be obtained for boron or thermal mixing in PWRs with grids as coarse as that utilized here, provided that higher order discretization schemes are used to minimize numerical diffusion. The obtained results indicate an apparently strong influence of the scenario in the behavior of the injection process. The normal operation simulation shows that virtually all boron solution flows down to the Main Recirculation Pump inlet located directly below the boron inlet nozzle. The loss of offsite power simulation shows initially a spread of the boron solution over the entire sectional area of the lower part of the downcomer filled with colder water. This remaining effect of the ECCS injection lasts until all this water has left the downcomer. Above this region, the boron injection jet develops in a vertical streak, eventually resembling the injection of the normal operation scenario. Due to the initial spread, this boron injection will probably cause larger temporal and spatial concentration variations in the core. In both cases, these variations may cause reactivity transients and fuel damage due to local power escalation. To settle this issue, an analysis using an extended model containing the downcomer, the MRPs and the Lower Plenum will be carried out. Also, the simulation time will be extended to a scale of

Numerical simulation of boron injection in a BWR

International Nuclear Information System (INIS)

Tinoco, Hernan; Buchwald, Przemyslaw; Frid, Wiktor

2010-01-01

The present study constitutes a first step to understand the process of boron injection, transport and mixing in a BWR. It consists of transient CFD simulations of boron injection in a model of the downcomer of Forsmark's Unit 3 containing about 6 million elements. The two cases studied are unintentional start of boron injection under normal operation and loss of offsite power with partial ATWS leaving 10% of the core power uncontrolled. The flow conditions of the second case are defined by means of an analysis with RELAP5, assuming boron injection start directly after the first ECCS injection. Recent publications show that meaningful conservative results may be obtained for boron or thermal mixing in PWRs with grids as coarse as that utilized here, provided that higher order discretization schemes are used to minimize numerical diffusion. The obtained results indicate an apparently strong influence of the scenario in the behavior of the injection process. The normal operation simulation shows that virtually all boron solution flows down to the Main Recirculation Pump inlet located directly below the boron inlet nozzle. The loss of offsite power simulation shows initially a spread of the boron solution over the entire sectional area of the lower part of the downcomer filled with colder water. This remaining effect of the ECCS injection lasts until all this water has left the downcomer. Above this region, the boron injection jet develops in a vertical streak, eventually resembling the injection of the normal operation scenario. Due to the initial spread, this boron injection will probably cause larger temporal and spatial concentration variations in the core. In both cases, these variations may cause reactivity transients and fuel damage due to local power escalation. To settle this issue, an analysis using an extended model containing the downcomer, the MRPs and the Lower Plenum will be carried out. Also, the simulation time will be extended to a scale of several

High pressure synthesis and investigations of properties of boron allotropes and boron carbide

International Nuclear Information System (INIS)

Chuvashova, Irina

2017-01-01

This work aimed at the development of the high-pressure high-temperature (HPHT) synthesis of single crystals of boron allotropes and boron-rich compounds, which could be used further for precise investigations of their structures, properties, and behavior at extreme conditions. To summarize, the present work resulted in the HPHT synthesis of the first previously unknown non-icosahedral boron allotrope ζ-B. This finding confirmed earlier theoretical predictions, which stayed unproven for decades because of experimental challenges which couldn't be overcome until recently. Structural stability of α-B and β-B in the Mbar pressure range and B 13 C 2 up to 68 GPa was experimentally proven. Accurate measurements of the unit cell and B 12 icosahedra volumes of the stoichiometric boron carbide B 13 C 2 as a function of pressure led to conclusion that they undergo a similar reduction upon compression that is typical for covalently bonded solids. Neither 'molecular-like' nor 'inversed molecular-like' solid behavior upon compression was detected that has closed a long-standing scientific dispute. A comparison of the compressional behavior of B 13 C 2 with that of α-B and γ-B allotropes and B 4 C showed that it is determined by the types of bonding involved in the course of compression.

High pressure synthesis and investigations of properties of boron allotropes and boron carbide

Energy Technology Data Exchange (ETDEWEB)

Chuvashova, Irina

2017-06-12

This work aimed at the development of the high-pressure high-temperature (HPHT) synthesis of single crystals of boron allotropes and boron-rich compounds, which could be used further for precise investigations of their structures, properties, and behavior at extreme conditions. To summarize, the present work resulted in the HPHT synthesis of the first previously unknown non-icosahedral boron allotrope ζ-B. This finding confirmed earlier theoretical predictions, which stayed unproven for decades because of experimental challenges which couldn't be overcome until recently. Structural stability of α-B and β-B in the Mbar pressure range and B{sub 13}C{sub 2} up to 68 GPa was experimentally proven. Accurate measurements of the unit cell and B{sub 12} icosahedra volumes of the stoichiometric boron carbide B{sub 13}C{sub 2} as a function of pressure led to conclusion that they undergo a similar reduction upon compression that is typical for covalently bonded solids. Neither 'molecular-like' nor 'inversed molecular-like' solid behavior upon compression was detected that has closed a long-standing scientific dispute. A comparison of the compressional behavior of B{sub 13}C{sub 2} with that of α-B and γ-B allotropes and B{sub 4}C showed that it is determined by the types of bonding involved in the course of compression.

Impact of Boron pollution to Biota Marine aquatic

International Nuclear Information System (INIS)

Heni Susiati; Yarianto-SBS; Imam Hamzah; Fepriadi

2003-01-01

Power plants and industrial facilities can release potentially harmful chemicals, like boron through direct aqueous discharges or cycling of cooling water to aquatic ecosystems environmental at plant surrounding. Boron is an essential trace element for the growth of marine biota, but can be toxic in excessive amount. Therefore will adversely affect of growth, reproduction or survival. Toxicity to aquatic organism, including vertebrates, invertebrates and plants can vary depending on the organism's life stage and environment. It is recommended that the maximum concentration of total boron for the protection of marine aquatic life should not exceed 1,2 mg B/L. Early stages of life cycle are more sensitive to boron than later ones, and the use of reconstituted water shows higher toxicity in lower boron concentrations than natural waters. (author)

Study of the diffuse spectral series of boron-like atomic systems

International Nuclear Information System (INIS)

Lavin, C.; Martin, I.; Vallejo, M.J.

1992-01-01

The diffuse spectral series, 2S 2 np 2 P-2s 2 nd 2 D, of the boron isoelectronic sequence has been studied through a one-particle scheme, by explicitly treating only the active electron. Oscillator strengths for various transitions (n = 2,3; n' = 3-16) have been computed with the quantum defect and relativistic quantum defect formalisms, and results comparing very satisfactory with other theoretical data have been obtained

Clinical trials of boron neutron capture therapy [in humans] [at Beth Israel Deaconess Medical Center][at Brookhaven National Laboratory

International Nuclear Information System (INIS)

Wallace, Christine

2001-01-01

Assessment of research records of Boron Neutron Capture Therapy was conducted at Brookhaven National Laboratory and Beth Israel Deaconess Medical Center using the Code of Federal Regulations, FDA Regulations and Good Clinical Practice Guidelines. Clinical data were collected FR-om subjects' research charts, and differences in conduct of studies at both centers were examined. Records maintained at Brookhaven National Laboratory were not in compliance with regulatory standards. Beth Israel's records followed federal regulations. Deficiencies discovered at both sites are discussed in the reports

Triarylborane-Based Materials for OLED Applications

Directory of Open Access Journals (Sweden)

Gulsen Turkoglu

2017-09-01

Full Text Available Multidisciplinary research on organic fluorescent molecules has been attracting great interest owing to their potential applications in biomedical and material sciences. In recent years, electron deficient systems have been increasingly incorporated into fluorescent materials. Triarylboranes with the empty p orbital of their boron centres are electron deficient and can be used as strong electron acceptors in conjugated organic fluorescent materials. Moreover, their applications in optoelectronic devices, energy harvesting materials and anion sensing, due to their natural Lewis acidity and remarkable solid-state fluorescence properties, have also been investigated. Furthermore, fluorescent triarylborane-based materials have been commonly utilized as emitters and electron transporters in organic light emitting diode (OLED applications. In this review, triarylborane-based small molecules and polymers will be surveyed, covering their structure-property relationships, intramolecular charge transfer properties and solid-state fluorescence quantum yields as functional emissive materials in OLEDs. Also, the importance of the boron atom in triarylborane compounds is emphasized to address the key issues of both fluorescent emitters and their host materials for the construction of high-performance OLEDs.

Boron isotopes in geothermal systems

International Nuclear Information System (INIS)

Aggarwal, J.

1997-01-01

Boron is a highly mobile element and during water-rock reactions, boron is leached out of rocks with no apparent fractionation. In geothermal systems where the water recharging the systems are meteoric in origin, the B isotope ratio of the geothermal fluid reflects the B isotope ratio of the rocks. Seawater has a distinctive B isotope ratio and where seawater recharges the geothermal system, the B isotope ratio of the geothermal system reflects the mixing of rock derived B and seawater derived B. Any deviations of the actual B isotope ratio of a mixture reflects subtle differences in the water-rock ratios in the cold downwelling limb of the hydrothermal system. This paper will present data from a variety of different geothermal systems, including New Zealand; Iceland; Yellowston, USA; Ibusuki, Japan to show the range in B isotope ratios in active geothermal systems. Some of these systems show well defined mixing trends between seawater and the host rocks, whilst others show the boron isotope ratios of the host rock only. In geothermal systems containing high amounts of CO 2 boron isotope ratios from a volatile B source can also be inferred. (auth)

Rapid synthesis of an electron-deficient t-BuPHOX ligand: cross-coupling of aryl bromides with secondary phosphine oxides

KAUST Repository

McDougal, Nolan T.

2010-10-01

Herein an efficient and direct copper-catalyzed coupling of oxazoline-containing aryl bromides with electron-deficient secondary phosphine oxides is reported. The resulting tertiary phosphine oxides can be reduced to prepare a range of PHOX ligands. The presented strategy is a useful alternative to known methods for constructing PHOX derivatives.

Rapid synthesis of an electron-deficient t-BuPHOX ligand: cross-coupling of aryl bromides with secondary phosphine oxides

KAUST Repository

McDougal, Nolan T.; Streuff, Jan; Mukherjee, Herschel; Virgil, Scott C.; Stoltz, Brian M.

2010-01-01

Herein an efficient and direct copper-catalyzed coupling of oxazoline-containing aryl bromides with electron-deficient secondary phosphine oxides is reported. The resulting tertiary phosphine oxides can be reduced to prepare a range of PHOX ligands. The presented strategy is a useful alternative to known methods for constructing PHOX derivatives.

First-principles studies for the stability of a graphene-like boron layer on CrB2(0001) and MoB2(0001)

International Nuclear Information System (INIS)

Qin Na; Liu Shiyu; Li Zhen; Zhao Hui; Wang Sanwu

2011-01-01

With extensive first-principles density-functional-theory calculations, we investigate the stability and the atomic and electronic structures of the CrB 2 (0001) and MoB 2 (0001) surfaces, each with two different terminations. It is found that the boron-terminated surface is energetically more favorable over the wide range of thermodynamically allowed chemical potentials than the metal-terminated surface for both CrB 2 (0001) and MoB 2 (0001), suggesting a stable layer of graphene-like boron on the surfaces. Our results also show the similarities and the differences in relaxation and in bonding characteristics between the boron-terminated and metal-terminated surfaces.

A colorimetric determination of boron in biological sample for boron neutron capture therapy

International Nuclear Information System (INIS)

Camilo, M.A.P.; Tomac Junior, U.

1989-01-01

The boron neutron capture therapy (BNCT) has shown better prognosis in the treatment of gliomas and glioblastomas grade III and IV than other therapies. During the treatment of levels of Na 2 10 B 12 H 11 S H must be known in several compartments of the organism and with this purpose the method of colorimetric determination of boron using curcumin was established. This method is simples, reproducible and has adequate sensitivity for this control. (author). 7 refs, 3 figs, 1 tab

Flame-photometric determination of boron in alloys with chromatographic separation

International Nuclear Information System (INIS)

Telegin, G.F.; Popandopulo, Yu.I.; Grazhuiene, S.S.

1983-01-01

A study was made on the possibility of using flame-photometric method for boron determination in iron base alloys. The method of extraction chromatography was used for boron separation from iron. It is possible to reliably determine boron in Fesub(x)Bsub(100-x) alloys only at a concentration ratio of iron to boron <=0.2. The technique for determination of boron in Fesub(x)Bsub(100-x) alloys was developed on the base of the conducted investigation

Flame-photometric determination of boron in alloys with chromatographic separation

Energy Technology Data Exchange (ETDEWEB)

Telegin, G.F.; Popandopulo, Yu.I.; Grazhuiene, S.S. (AN SSSR, Chernogolovka. Inst. Fiziki Tverdogo Tela)

1983-01-01

A study was made on the possibility of using flame-photometric method for boron determination in iron base alloys. The method of extraction chromatography was used for boron separation from iron. It is possible to reliably determine boron in Fesub(x)Bsub(100-x) alloys only at a concentration ratio of iron to boron <=0.2. The technique for determination of boron in Fesub(x)Bsub(100-x) alloys was developed on the base of the conducted investigation.

The effect of the boron source composition ratio on the adsorption performance of hexagonal boron nitride without a template

Energy Technology Data Exchange (ETDEWEB)

Zhang, Ning, E-mail: zhangning5832@163.com; Zhang, Tong; Kan, Hongmin; Wang, Xiaoyang; Long, Haibo; Cui, Xingyu

2015-08-01

An inexpensive boric acid (H{sub 3}BO{sub 3}) and borax (Na{sub 2}B{sub 4}O{sub 7}·10H{sub 2}O) mix was used as a source of boron with different composition ratios, and urea was used as a nitrogen source, in flowing ammonia atmosphere, for the preparation of hexagonal boron nitride (h-BN) with different micro-morphologies. Under a certain synthesis process, the effects of the molar ratio of borax and boric acid (or simply the boron source composition ratio for short) on the phase composition of the sample were studied; the work also explored the effect of boron source composition ratio on the micro-morphology, adsorption desorption isotherm and specific surface area of the h-BN powder. The main purpose of this work was to determine the optimum composition ratio of preparing spherical mesoporous h-BN and ensure that the micro-mechanism underpinning the formation of spherical mesoporous h-BN was understood. The results showed that at the optimum boron source composition ratio of 1:1, globular mesoporous spheres with a diameter of approximately 600–800 nm could be obtained with the highest pore volume and specific surface area (230.2 m{sup 2}/g). - Graphical abstract: Display Omitted - Highlights: • Spherical h-BN was synthesized by controlling the boron source composition ratio. • Without extra spherical template, solid Na{sub 2}O was equal to a spherical template. • At boron source composition ratio of 1:1, h-BN had best adsorption performance.