WorldWideScience

Sample records for electron collection layer

  1. Electronic structure, transport, and collective effects in molecular layered systems

    Directory of Open Access Journals (Sweden)

    Torsten Hahn

    2017-10-01

    Full Text Available The great potential of organic heterostructures for organic device applications is exemplified by the targeted engineering of the electronic properties of phthalocyanine-based systems. The transport properties of two different phthalocyanine systems, a pure copper phthalocyanine (CoPc and a flourinated copper phthalocyanine–manganese phthalocyanine (F16CoPc/MnPc heterostructure, are investigated by means of density functional theory (DFT and the non-equilibrium Green’s function (NEGF approach. Furthermore, a master-equation-based approach is used to include electronic correlations beyond the mean-field-type approximation of DFT. We describe the essential theoretical tools to obtain the parameters needed for the master equation from DFT results. Finally, an interacting molecular monolayer is considered within a master-equation approach.

  2. Inverted bulk-heterojunction organic solar cell using chemical bath deposited titanium oxide as electron collection layer

    OpenAIRE

    Kuwabara, Takayuki; Sugiyama, Hirokazu; Kuzuba, Mitsuhiro  ; Yamaguchi, Takahiro; Takahashi, Kohshin

    2010-01-01

    Chemical bath deposited titanium oxide (TiOx ) as an electron collection layer is introduced between the organic layer and the indium tin oxide (ITO) electrode for improving the performance of inverted bulk-heterojunction organic thin film solar cells with 1 cm2 active area, where regioregular poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) were mainly used as the photo-active layer. The uniform and thin TiOx film was easily prepared onto the ITO electrode ...

  3. Improved electron transport layer

    DEFF Research Database (Denmark)

    2012-01-01

    The present invention provides: a method of preparing a coating ink for forming a zinc oxide electron transport layer, comprising mixing zinc acetate and a wetting agent in water or methanol; a coating ink comprising zinc acetate and a wetting agent in aqueous solution or methanolic solution......; a method of preparing a zinc oxide electron transporting layer, which method comprises: i) coating a substrate with the coating ink of the present invention to form a film; ii) drying the film; and iii) heating the dry film to convert the zinc acetate substantially to ZnO; a method of preparing an organic...... photovoltaic device or an organic LED having a zinc oxide electron transport layer, the method comprising, in this order: a) providing a substrate bearing a first electrode layer; b) forming an electron transport layer according to the following method: i) coating a coating ink comprising an ink according...

  4. Calcium carbonate electronic-insulating layers improve the charge collection efficiency of tin oxide photoelectrodes in dye-sensitized solar cells

    International Nuclear Information System (INIS)

    Shaikh, Shoyebmohamad F.; Mane, Rajaram S.; Hwang, Yun Jeong; Joo, Oh-Shim

    2015-01-01

    In dye-sensitized solar cells (DSSCs), a surface passivation layer has been employed on the tin oxide (SnO 2 ) photoanodes to enhance the charge collection efficiency, and thus the power conversion efficiency. Herein, we demonstrate that the electronic-insulating layering of calcium carbonate (CaCO 3 ) can improve the charge collection efficiency in dye-sensitized solar cells designed with photoanodes. In order to evaluate the effectiveness of CaCO 3 layering, both layered and pristine SnO 2 photoanodes are characterized with regard to their structures, morphologies, and photo-electrochemical measurements. The SnO 2 -6L CaCO 3 photoanode has demonstrated as high as 3.5% power conversion efficiency; 3.5-fold greater than that of the pristine SnO 2 photoanode. The enhancement in the power conversion efficiency is corroborated with the number of the dye molecules, the passivation of surface states, a negative shift in the conduction band position, and the reduced electron recombination rate of photoelectrons following the coating of the CaCO 3 surface layer

  5. Counting graphene layers with very slow electrons

    Energy Technology Data Exchange (ETDEWEB)

    Frank, Ludĕk; Mikmeková, Eliška; Müllerová, Ilona [Institute of Scientific Instruments AS CR, v.v.i., Královopolská 147, 61264 Brno (Czech Republic); Lejeune, Michaël [Laboratoire de Physique de la Matière Condensée, Faculté des Sciences d' Amiens, Universite de Picardie Jules Verne, 33 rue Saint Leu, 80039 Amiens Cedex 2 (France)

    2015-01-05

    The study aimed at collection of data regarding the transmissivity of freestanding graphene for electrons across their full energy scale down to the lowest energies. Here, we show that the electron transmissivity of graphene drops with the decreasing energy of the electrons and remains below 10% for energies below 30 eV, and that the slow electron transmissivity value is suitable for reliable determination of the number of graphene layers. Moreover, electrons incident below 50 eV release adsorbed hydrocarbon molecules and effectively clean graphene in contrast to faster electrons that decompose these molecules and create carbonaceous contamination.

  6. An easy-to-fabricate low-temperature TiO2 electron collection layer for high efficiency planar heterojunction perovskite solar cells

    Directory of Open Access Journals (Sweden)

    B. Conings

    2014-08-01

    Full Text Available Organometal trihalide perovskite solar cells arguably represent the most auspicious new photovoltaic technology so far, as they possess an astonishing combination of properties. The impressive and brisk advances achieved so far bring forth highly efficient and solution processable solar cells, holding great promise to grow into a mature technology that is ready to be embedded on a large scale. However, the vast majority of state-of-the-art perovskite solar cells contains a dense TiO2 electron collection layer that requires a high temperature treatment (>450 °C, which obstructs the road towards roll-to-roll processing on flexible foils that can withstand no more than ∼150 °C. Furthermore, this high temperature treatment leads to an overall increased energy payback time and cumulative energy demand for this emerging photovoltaic technology. Here we present the implementation of an alternative TiO2 layer formed from an easily prepared nanoparticle dispersion, with annealing needs well within reach of roll-to-roll processing, making this technology also appealing from the energy payback aspect. Chemical and morphological analysis allows to understand and optimize the processing conditions of the TiO2 layer, finally resulting in a maximum obtained efficiency of 13.6% for a planar heterojunction solar cell within an ITO/TiO2/CH3NH3PbI3-xClxpoly(3-hexylthiophene/Ag architecture.

  7. Collective accelerator for electron colliders

    Energy Technology Data Exchange (ETDEWEB)

    Briggs, R.J.

    1985-05-13

    A recent concept for collective acceleration and focusing of a high energy electron bunch is discussed, in the context of its possible applicability to large linear colliders in the TeV range. The scheme can be considered to be a member of the general class of two-beam accelerators, where a high current, low voltage beam produces the acceleration fields for a trailing high energy bunch.

  8. Collective accelerator for electron colliders

    International Nuclear Information System (INIS)

    Briggs, R.J.

    1985-01-01

    A recent concept for collective acceleration and focusing of a high energy electron bunch is discussed, in the context of its possible applicability to large linear colliders in the TeV range. The scheme can be considered to be a member of the general class of two-beam accelerators, where a high current, low voltage beam produces the acceleration fields for a trailing high energy bunch

  9. Structural complexities in the active layers of organic electronics.

    Science.gov (United States)

    Lee, Stephanie S; Loo, Yueh-Lin

    2010-01-01

    The field of organic electronics has progressed rapidly in recent years. However, understanding the direct structure-function relationships between the morphology in electrically active layers and the performance of devices composed of these materials has proven difficult. The morphology of active layers in organic electronics is inherently complex, with heterogeneities existing across multiple length scales, from subnanometer to micron and millimeter range. A major challenge still facing the organic electronics community is understanding how the morphology across all of the length scales in active layers collectively determines the device performance of organic electronics. In this review we highlight experiments that have contributed to the elucidation of structure-function relationships in organic electronics and also point to areas in which knowledge of such relationships is still lacking. Such knowledge will lead to the ability to select active materials on the basis of their inherent properties for the fabrication of devices with prespecified characteristics.

  10. The thin layer technique and its application to electron microscopy

    International Nuclear Information System (INIS)

    Ranc, G.

    1957-10-01

    This work deals with the technique of thin layers obtained by evaporation under vacuum, in the thickness range extending from a few monoatomic layers to several hundred angstroms. The great theoretical and practical interest of these layers has, it is well known, given rise to many investigations from Faraday onwards. Within the necessarily restricted limits of this study, we shall approach the problem more particularly from the point of view of: - their production; - their use in electron microscopy. A critical appraisal is made, in the light of present-day knowledge, based on our personal experience and on an extensive bibliography which we have collected on the subject. (author) [fr

  11. Technology scan for electronic toll collection.

    Science.gov (United States)

    2008-06-01

    The purpose of this project was to identify and assess available technologies and methodologies for electronic toll collection (ETC) and to develop recommendations for the best way(s) to implement toll collection in the Louisville metropolitan area. ...

  12. Counting graphene layers with very slow electrons

    Czech Academy of Sciences Publication Activity Database

    Frank, Luděk; Mikmeková, Eliška; Müllerová, Ilona; Lejeune, M.

    2015-01-01

    Roč. 106, 09 JAN (2015), 013117:1-5 ISSN 0003-6951 R&D Projects: GA TA ČR(CZ) TE01020118; GA MŠk(CZ) LO1212 Institutional support: RVO:68081731 Keywords : graphene * ultralow energy STEM * counting graphene layers * clean ing of graphene * 2D crystals Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 3.142, year: 2015

  13. Buffer layers and articles for electronic devices

    Science.gov (United States)

    Paranthaman, Mariappan P.; Aytug, Tolga; Christen, David K.; Feenstra, Roeland; Goyal, Amit

    2004-07-20

    Materials for depositing buffer layers on biaxially textured and untextured metallic and metal oxide substrates for use in the manufacture of superconducting and other electronic articles comprise RMnO.sub.3, R.sub.1-x A.sub.x MnO.sub.3, and combinations thereof; wherein R includes an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Y, and A includes an element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Ra.

  14. Developing and managing electronic collections the essentials

    CERN Document Server

    Johnson, Peggy

    2014-01-01

    The complex issues associated with developing and managing electronic collections deserve special treatment, and library collection authority Peggy Johnson rises to the challenge with a book sure to become a benchmark for excellence. Providing comprehensive coverage of key issues and decision points, she offers advice on best practices for developing and managing these important resources for libraries of all types and sizes.

  15. Collective electromagnetic mode in layered conductors

    International Nuclear Information System (INIS)

    Gokhfel'd, V.M.; Peschanskij, V.G.

    1999-01-01

    In the frames of the Landau theory we consider the transverse zero-sound wave in a single-component charged Fermi-liquid with the quasi-two-dimensional electron energy spectrum. In such media, unlike conventional metals, the electromagnetic wave propagation along the weak conductivity direction is possible even at low intensity of the Fermi-liquid interaction. We find the field distribution in a sample, calculate the wave impedance and discuss the possibility of observation of the effect under the pulse condition

  16. Organic photovoltaic cell incorporating electron conducting exciton blocking layers

    Science.gov (United States)

    Forrest, Stephen R.; Lassiter, Brian E.

    2014-08-26

    The present disclosure relates to photosensitive optoelectronic devices including a compound blocking layer located between an acceptor material and a cathode, the compound blocking layer including: at least one electron conducting material, and at least one wide-gap electron conducting exciton blocking layer. For example, 3,4,9,10 perylenetetracarboxylic bisbenzimidazole (PTCBI) and 1,4,5,8-napthalene-tetracarboxylic-dianhydride (NTCDA) function as electron conducting and exciton blocking layers when interposed between the acceptor layer and cathode. Both materials serve as efficient electron conductors, leading to a fill factor as high as 0.70. By using an NTCDA/PTCBI compound blocking layer structure increased power conversion efficiency is achieved, compared to an analogous device using a conventional blocking layers shown to conduct electrons via damage-induced midgap states.

  17. Electronic energy loss spectra from mono-layer to few layers of phosphorene

    International Nuclear Information System (INIS)

    Mohan, Brij; Thakur, Rajesh; Ahluwalia, P. K.

    2016-01-01

    Using first principles calculations, electronic and optical properties of few-layers phosphorene has been investigated. Electronic band structure show a moderate band gap of 0.9 eV in monolayer phosphorene which decreases with increasing number of layers. Optical properties of few-layers of phosphorene in infrared and visible region shows tunability with number of layers. Electron energy loss function has been plotted and huge red shift in plasmonic behaviours is found. These tunable electronic and optical properties of few-layers of phosphorene can be useful for the applications of optoelectronic devices.

  18. Electronic energy loss spectra from mono-layer to few layers of phosphorene

    Energy Technology Data Exchange (ETDEWEB)

    Mohan, Brij, E-mail: brijmohanhpu@yahoo.com; Thakur, Rajesh; Ahluwalia, P. K. [Department of Physics, Himachal Pradesh University, Shimla (HP) India 171005 (India)

    2016-05-23

    Using first principles calculations, electronic and optical properties of few-layers phosphorene has been investigated. Electronic band structure show a moderate band gap of 0.9 eV in monolayer phosphorene which decreases with increasing number of layers. Optical properties of few-layers of phosphorene in infrared and visible region shows tunability with number of layers. Electron energy loss function has been plotted and huge red shift in plasmonic behaviours is found. These tunable electronic and optical properties of few-layers of phosphorene can be useful for the applications of optoelectronic devices.

  19. 76 FR 9024 - Agency Information Collection Activities; Proposed Collection; Comment Request; Electronic...

    Science.gov (United States)

    2011-02-16

    ...] Agency Information Collection Activities; Proposed Collection; Comment Request; Electronic Records; Electronic Signatures AGENCY: Food and Drug Administration, HHS. ACTION: Notice. SUMMARY: The Food and Drug... relating to FDA's electronic records and electronic signatures. DATES: Submit either electronic or written...

  20. Electron liquid in collection description III

    International Nuclear Information System (INIS)

    Arponen, J.; Pajanne, E.

    1978-05-01

    A new, computationally effective, formulation for the problem of a charged impurity in an interacting electron gas is given. The approach is based on the previously introduced formalism in which the collective excitations of the electron system are represented by interacting bosons. This enables one to include in a logical way the most important terms of the electron-electron interaction beyond the rand--om phase approximation (RPA). The numerical application to positron annihilation shows that the added non-RPA terms remove from the annihilation rate lambda and the correlation energy E the divergences, which have troubled the earlier theories. The rate lambda and the energy E are both continuous functions of the electron density and approach their correct limiting values for low densities. The numerical valves of lambda at physical densities correspond closely to the measured positron lifetimes in metals. A very noteworthy characteristic of the present theory is that the sum rule for the displaced charge is fulfilled typically to the accuracy of 1 %. Numerical results are also given for the positron kinetic energy, the various components of the positron correlation energy, the pair-correlation function, the electrostatic potential as well as the positron momentum probability distribution at various electron densities. (author)

  1. Electron scattering and collective excitations in nuclei

    International Nuclear Information System (INIS)

    Goutte, D.

    1989-01-01

    Nuclear collective degrees of freedom are investigated through the study of the radial dependance of their wave function. Inelastic electron scattering is shown to be the appropriate tool to extract such a detailed information. Some recent results on spherical as well as deformed nuclei are discussed and the most recent extensions to the mean field approach are compared to these data in order to clarify the present status of our understanding of the dynamical properties of complex nuclei

  2. Decreasing the electronic confinement in layered perovskites through intercalation.

    Science.gov (United States)

    Smith, Matthew D; Pedesseau, Laurent; Kepenekian, Mikaël; Smith, Ian C; Katan, Claudine; Even, Jacky; Karunadasa, Hemamala I

    2017-03-01

    We show that post-synthetic small-molecule intercalation can significantly reduce the electronic confinement of 2D hybrid perovskites. Using a combined experimental and theoretical approach, we explain structural, optical, and electronic effects of intercalating highly polarizable molecules in layered perovskites designed to stabilize the intercalants. Polarizable molecules in the organic layers substantially alter the optical and electronic properties of the inorganic layers. By calculating the spatially resolved dielectric profiles of the organic and inorganic layers within the hybrid structure, we show that the intercalants afford organic layers that are more polarizable than the inorganic layers. This strategy reduces the confinement of excitons generated in the inorganic layers and affords the lowest exciton binding energy for an n = 1 perovskite of which we are aware. We also demonstrate a method for computationally evaluating the exciton's binding energy by solving the Bethe-Salpeter equation for the exciton, which includes an ab initio determination of the material's dielectric profile across organic and inorganic layers. This new semi-empirical method goes beyond the imprecise phenomenological approximation of abrupt dielectric-constant changes at the organic-inorganic interfaces. This work shows that incorporation of polarizable molecules in the organic layers, through intercalation or covalent attachment, is a viable strategy for tuning 2D perovskites towards mimicking the reduced electronic confinement and isotropic light absorption of 3D perovskites while maintaining the greater synthetic tunability of the layered architecture.

  3. Wearable electronics formed on intermediate layer on textiles

    KAUST Repository

    Hussain, Muhammad Mustafa

    2017-07-27

    One manner of producing more desirable clothing with electronic capabilities is to manufacture electronics, such as the charging wires or devices themselves, directly onto the textile materials. Textile materials generally do not support the manufacturing of electronic devices, in part because the surface of the textile is too rough for electronic devices or the processes used to manufacturing electronic devices. An intermediate layer (204) may be placed on the textile material (202) to reduce the roughness of the surface of the textile material and provide other beneficial characteristics for the placement of electronic devices (206) directly on the textile material.

  4. Collective electronic excitations in C60 crystals

    International Nuclear Information System (INIS)

    Wu, X.; Ulloa, S.E.

    1994-01-01

    We present a theoretical study of the electronic excitations in fullerene crystals by calculating the density-density correlation function in a fully nonlocal linear response theory. Our results indicate that the collective features associates with the π→π * transitions show strong anisotropic properties, with peaks changing by as much as 0.7 eV in different directions. Meanwhile, the calculated mode dispersion exhibits rather weak wave-number dependence along a given direction, in general agreement with experimental results. The oscillator strength also shows anisotropic behavior, with significant weight redistribution for different directions. We also analyze this system in terms of a classical point-dipole array model, and show that this simple model approximates well the quantum results

  5. Electron heat transport in stochastic magnetic layer

    International Nuclear Information System (INIS)

    Becoulet, M.; Ghendrih, Ph.; Capes, H.; Grosman, A.

    1999-06-01

    Progress in the theoretical understanding of the local behaviour of the temperature field in ergodic layer was done in the framework of quasi-linear approach but this quasi-linear theory was not complete since the resonant modes coupling (due to stochasticity) was neglected. The stochastic properties of the magnetic field in the ergodic zone are now taken into account by a non-linear coupling of the temperature modes. The three-dimension heat transfer modelling in the ergodic-divertor configuration is performed by quasi-linear (ERGOT1) and non-linear (ERGOT2) numerical codes. The formalism and theoretical basis of both codes are presented. The most important effect that can be simulated with non-linear code is the averaged temperature profile flattening that occurs in the ergodic zone and the barrier creation that appears near the separatrix during divertor operation. (A.C.)

  6. Intense synchrotron radiation from a magnetically compressed relativistic electron layer

    International Nuclear Information System (INIS)

    Shearer, J.W.; Nowak, D.A.; Garelis, E.; Condit, W.C.

    1975-10-01

    Using a simple model of a relativistic electron layer rotating in an axial magnetic field, energy gain by an increasing magnetic field and energy loss by synchrotron radiation were considered. For a typical example, initial conditions were approximately 8 MeV electron in approximately 14 kG magnetic field, at a layer radius of approximately 20 mm, and final conditions were approximately 4 MG magnetic field approximately 100 MeV electron layer energy at a layer radius of approximately 1.0 mm. In the final state, the intense 1-10 keV synchrotron radiation imposes an electron energy loss time constant of approximately 100 nanoseconds. In order to achieve these conditions in practice, the magnetic field must be compressed by an imploding conducting liner; preferably two flying rings in order to allow the synchrotron radiation to escape through the midplane. The synchrotron radiation loss rate imposes a lower limit to the liner implosion velocity required to achieve a given final electron energy (approximately 1 cm/μsec in the above example). In addition, if the electron ring can be made sufficiently strong (field reversed), the synchrotron radiation would be a unique source of high intensity soft x-radiation

  7. Electronic collective modes and instabilities on semiconductor surfaces. I

    International Nuclear Information System (INIS)

    Muramatsu, A.; Hanke, W.

    1984-01-01

    A Green's-function theory of electronic collective modes is presented which leads to a practical scheme for a microscopic determination of surface elementary excitations in conducting as well as nonconducting solids. Particular emphasis is placed on semiconductor surfaces where the jellium approximation is not valid, due to the importance of density fluctuations on a microscopic scale (reflected in the local-field effects). Starting from the Bethe-Salpeter equation for the two-particle Green's function of the surface system, an equation of motion for the electron-hole pair is obtained. Its solutions determine the energy spectra, lifetimes, and amplitudes of the surface elementary excitations, i.e., surface plasmons, excitons, polaritons, and magnons. Exchange and correlation effects are taken into account through the random-phase and time-dependent Hartree-Fock (screened electron-hole attraction) approximations. The formalism is applied to the study of electronic (charge- and spin-density) instabilities at covalent semiconductor surfaces. Quantitative calculations for an eight-layer Si(111) slab display an instability of the ideal paramagnetic surface with respect to spin-density waves with wavelength nearly corresponding to (2 x 1) and (7 x 7) superstructures

  8. Inter-layer Cooper pairing of two-dimensional electrons

    International Nuclear Information System (INIS)

    Inoue, Masahiro; Takemori, Tadashi; Yoshizaki, Ryozo; Sakudo, Tunetaro; Ohtaka, Kazuo

    1987-01-01

    The authors point out the possibility that the high transition temperatures of the recently discovered oxide superconductors are dominantly caused by the inter-layer Cooper pairing of two-dimensional electrons that are coupled through the exchange of three-dimensional phonons. (author)

  9. Electron beam deposition system causing little damage to organic layers

    Energy Technology Data Exchange (ETDEWEB)

    Yamada, Minoru [Research Center for Solar Energy Chemistry, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531 (Japan); Business Incubation Department, Hitachi Zosen Corporation, 2-11 Funamachi 2-Chome, Taisho-ku, Osaka 551-0022 (Japan); Matsumura, Michio, E-mail: matsu@chem.es.osaka-u.ac.jp [Research Center for Solar Energy Chemistry, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531 (Japan); Maeda, Yasuhiro [Business Incubation Department, Hitachi Zosen Corporation, 2-11 Funamachi 2-Chome, Taisho-ku, Osaka 551-0022 (Japan)

    2011-07-29

    Conditions for deposition of an aluminum (Al) layer on an organic light-emitting layer with an electron beam (EB) deposition system were optimized with respect to deposition rate and damage to organic layers. The damage to the organic layers was found to be mostly caused by X-rays emitted from a target bombarded with accelerated electrons. In order to decrease the X-ray intensity while maintaining a high deposition rate, we used an EB source which emits high-density EB at low acceleration voltage. In addition, we inserted a heat reflector and a sintered-carbon liner between the Al target and copper crucible to improve heat insulation. As a result, the voltage needed for the deposition of Al electrodes at a rate of about 8 nm/s was lowered from normal voltages of 2.0 kV or higher to as low as 1.5 kV. To reduce the number of electrons hitting the substrate, we set pole pieces near the target and an electron trap in the chamber. The devices on which Al electrodes were deposited with the EB system showed almost the same properties as those of devices on which the Al electrodes were deposited by a resistive-heating method.

  10. Preionization electron density measurement by collecting electric charge

    International Nuclear Information System (INIS)

    Giordano, G.; Letardi, T.

    1988-01-01

    A method using electron collection for preionization-electron number density measurements is presented. A cathode-potential drop model is used to describe the measurement principle. There is good agreement between the model and the experimental result

  11. Optoelectronic devices, low temperature preparation methods, and improved electron transport layers

    KAUST Repository

    Eita, Mohamed S.; El, Labban Abdulrahman; Usman, Anwar; Beaujuge, Pierre; Mohammed, Omar F.

    2016-01-01

    An optoelectronic device such as a photovoltaic device which has at least one layer, such as an electron transport layer, which comprises a plurality of alternating, oppositely charged layers including metal oxide layers. The metal oxide can be zinc

  12. Role of electron-electron scattering on spin transport in single layer graphene

    Directory of Open Access Journals (Sweden)

    Bahniman Ghosh

    2014-01-01

    Full Text Available In this work, the effect of electron-electron scattering on spin transport in single layer graphene is studied using semi-classical Monte Carlo simulation. The D’yakonov-P’erel mechanism is considered for spin relaxation. It is found that electron-electron scattering causes spin relaxation length to decrease by 35% at 300 K. The reason for this decrease in spin relaxation length is that the ensemble spin is modified upon an e-e collision and also e-e scattering rate is greater than phonon scattering rate at room temperature, which causes change in spin relaxation profile due to electron-electron scattering.

  13. Thin-layer electrochemistry of ferrocenylbenzene derivatives: Intramolecular electronic communication

    International Nuclear Information System (INIS)

    Wang, Michael C.P.; Li Yunchao; Merbouh, Nabyl; Yu, Hua-Zhong

    2008-01-01

    Three arylferrocene derivatives, ferrocenylbenzene (MFcB), 1,3-diferrocenylbenzene (DFcB), and 1,3,5-triferrocenylbenzene (TFcB), were prepared and their redox properties systematically explored by thin-layer cyclic voltammetry (CV) and differential-pulse voltammetry (DPV). In contrast to conventional CV measurements that produced only a single pair of redox waves for all three compounds, the thin-layer technique discriminated between the multistep electron-transfer processes of DFcB and TFcB. In particular, two and three pairs of symmetric peaks were observed, respectively, when CV curves were recorded at a graphite electrode coated with a DFcB-containing and a TFcB-containing thin film of nitrobenzene and immersed in aqueous sodium perchlorate solution. These results demonstrate that the ferrocenyl moieties attached to the meta-positions of a benzene ring communicate electronically with each other, as a result of their distinct face-to-face orientations

  14. Blocking layer modeling for temperature analysis of electron transfer ...

    African Journals Online (AJOL)

    In this article, we simulate thermal effects on the electron transfer rate from three quantum dots CdSe, CdS and CdTe to three metal oxides TiO2, SnO2 and ZnO2 in the presence of four blocking layers ZnS, ZnO, TiO2 and Al2O3, in a porous quantum dot sensitized solar cell (QDSSC) structure, using Marcus theory.

  15. Electron beam dosimetry for a thin-layer absorber irradiated by 300-keV electrons

    International Nuclear Information System (INIS)

    Kijima, Toshiyuki; Nakase, Yoshiaki

    1993-01-01

    Depth-dose distributions in thin-layer absorbers were measured for 300-keV electrons from a scanning-type irradiation system, the electrons having penetrated through a Ti-window and an air gap. Irradiations of stacks of cellulose triacetate(CTA) film were carried out using either a conveyor (i.e. dynamic irradiation) or fixed (i.e. static) irradiation. The sample was irradiated using various angles of incidence of electrons, in order to examine the effect of obliqueness of electron incidence at low-energy representative of routine radiation curing of thin polymeric or resin layers. Dynamic irradiation gives broader and shallower depth-dose distributions than static irradiation. Greater obliqueness of incident electrons gives results that can be explained in terms of broader and shallower depth-dose distributions. The back-scattering of incident electrons by a metal(Sn) backing material enhances the absorbed dose in a polymeric layer and changes the overall distribution. It is suggested that any theoretical estimations of the absorbed dose in thin layers irradiated in electron beam curing must be accomplished and supported by experimental data such as that provided by this investigation. (Author)

  16. Electron molecular beam epitaxy: Layer-by-layer growth of complex oxides via pulsed electron-beam deposition

    International Nuclear Information System (INIS)

    Comes, Ryan; Liu Hongxue; Lu Jiwei; Gu, Man; Khokhlov, Mikhail; Wolf, Stuart A.

    2013-01-01

    Complex oxide epitaxial film growth is a rich and exciting field, owing to the wide variety of physical properties present in oxides. These properties include ferroelectricity, ferromagnetism, spin-polarization, and a variety of other correlated phenomena. Traditionally, high quality epitaxial oxide films have been grown via oxide molecular beam epitaxy or pulsed laser deposition. Here, we present the growth of high quality epitaxial films using an alternative approach, the pulsed electron-beam deposition technique. We demonstrate all three epitaxial growth modes in different oxide systems: Frank-van der Merwe (layer-by-layer); Stranski-Krastanov (layer-then-island); and Volmer-Weber (island). Analysis of film quality and morphology is presented and techniques to optimize the morphology of films are discussed.

  17. Electrons in the boundary layers near the dayside magnetopause

    International Nuclear Information System (INIS)

    Hall, D.S.; Chaloner, C.P.; Bryant, D.A.; Lepine, D.R.; Tritakis, V.P.

    1990-10-01

    Entry of heated solar-wind plasma into the magnetosphere is examined using electron distributions. In particular, the angular structure of the electron distributions is studied within the transition region separating the magnetosheath from the inner magnetosphere. The measurements suggest that electrons in the outer part of the transition region originate in the magnetosheath, whilst the population closer to the Earth consists of electrons from the magnetosphere combined with an energized magnetosheath component. This energized component contains ''counterstreaming'' electrons, which are confined to directions closely parallel and anti-parallel to the magnetic field direction. The possibilities, that the energization of the counterstreaming electrons is cumulatively gained from either waves, electric fields perpendicular to the magnetic field, or quasi-Fermi acceleration, are discussed. It is not possible to identify the topology of the magnetic fields of the outer part of the region, but there is strong evidence that the inner part is on closed magnetic field lines, which map to the dayside auroral zone. The outer part of the transition region is a plasma depletion/magnetic-field compression layer. The structure of the transition region is similar to that surrounding flux transfer events, which leads to the deduction that the plasma and field signatures of flux transfer events may be the result of displacement of the transition region earthwards. Cases where the displacement is such that the field maximum of the depletion/compression region is encountered, may well explain ''crater'' flux transfer event signatures. (author)

  18. Automated data collection in single particle electron microscopy

    Science.gov (United States)

    Tan, Yong Zi; Cheng, Anchi; Potter, Clinton S.; Carragher, Bridget

    2016-01-01

    Automated data collection is an integral part of modern workflows in single particle electron microscopy (EM) research. This review surveys the software packages available for automated single particle EM data collection. The degree of automation at each stage of data collection is evaluated, and the capabilities of the software packages are described. Finally, future trends in automation are discussed. PMID:26671944

  19. Slow electron acoustic double layer (SEADL) structures in bi-ion plasma with trapped electrons

    Science.gov (United States)

    Shan, Shaukat Ali; Imtiaz, Nadia

    2018-05-01

    The properties of ion acoustic double layer (IADL) structures in bi-ion plasma with electron trapping are investigated by using the quasi-potential analysis. The κ-distributed trapped electrons number density expression is truncated to some finite order of the electrostatic potential. By utilizing the reductive perturbation method, a modified Schamel equation which describes the evolution of the slow electron acoustic double layer (SEADL) with the modified speed due to the presence of bi-ion species is investigated. The Sagdeev-like potential has been derived which accounts for the effect of the electron trapping and superthermality in a bi-ion plasma. It is found that the superthermality index, the trapping efficiency of electrons, and ion to electron temperature ratio are the inhibiting parameters for the amplitude of the slow electron acoustic double layers (SEADLs). However, the enhanced population of the cold ions is found to play a supportive role for the low frequency DLs in bi-ion plasmas. The illustrations have been presented with the help of the bi-ion plasma parameters in the Earth's ionosphere F-region.

  20. Enhanced Charge Collection with Passivation Layers in Perovskite Solar Cells.

    Science.gov (United States)

    Lee, Yong Hui; Luo, Jingshan; Son, Min-Kyu; Gao, Peng; Cho, Kyung Taek; Seo, Jiyoun; Zakeeruddin, Shaik M; Grätzel, Michael; Nazeeruddin, Mohammad Khaja

    2016-05-01

    The Al2 O3 passivation layer is beneficial for mesoporous TiO2 -based perovskite solar cells when it is deposited selectively on the compact TiO2 surface. Such a passivation layer suppressing surface recombination can be formed by thermal decomposition of the perovskite layer during post-annealing. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Electronic self-organization in layered transition metal dichalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Ritschel, Tobias

    2015-10-30

    The interplay between different self-organized electronically ordered states and their relation to unconventional electronic properties like superconductivity constitutes one of the most exciting challenges of modern condensed matter physics. In the present thesis this issue is thoroughly investigated for the prototypical layered material 1T-TaS{sub 2} both experimentally and theoretically. At first the static charge density wave order in 1T-TaS{sub 2} is investigated as a function of pressure and temperature by means of X-ray diffraction. These data indeed reveal that the superconductivity in this material coexists with an inhomogeneous charge density wave on a macroscopic scale in real space. This result is fundamentally different from a previously proposed separation of superconducting and insulating regions in real space. Furthermore, the X-ray diffraction data uncover the important role of interlayer correlations in 1T-TaS{sub 2}. Based on the detailed insights into the charge density wave structure obtained by the X-ray diffraction experiments, density functional theory models are deduced in order to describe the electronic structure of 1T-TaS{sub 2} in the second part of this thesis. As opposed to most previous studies, these calculations take the three-dimensional character of the charge density wave into account. Indeed the electronic structure calculations uncover complex orbital textures, which are interwoven with the charge density wave order and cause dramatic differences in the electronic structure depending on the alignment of the orbitals between neighboring layers. Furthermore, it is demonstrated that these orbital-mediated effects provide a route to drive semiconductor-to-metal transitions with technologically pertinent gaps and on ultrafast timescales. These results are particularly relevant for the ongoing development of novel, miniaturized and ultrafast devices based on layered transition metal dichalcogenides. The discovery of orbital textures

  2. Anomalous magnetotransport of a surface electron layer above liquid helium

    International Nuclear Information System (INIS)

    Grigor'ev, V.N.; Kovdrya, Yu.Z.; Nikolaenko, V.A.; Kirichek, O.I.; Shcherbachenko, R.I.

    1991-01-01

    The magnetoconductivity σ xx of a surface electron layer above liquid helium has been measured at temperatures between 0.5-1.6 K, for concentrations up to about 4x10 8 cm -2 , in magnetic fields up to 25 kOe. As was observed, σ xx first decreases with lowering temperature, then has a minimum and at T xy , the earlier ascertained anomalous behaviour of the magnetoresistance ρ xx taken into consideration. The calculated dependence of ρ xx on T is in satisfactory agreement with the anomalous dependence ρ xx (T) found earlier by experiment

  3. Silicotungstate, a Potential Electron Transporting Layer for Low-Temperature Perovskite Solar Cells.

    Science.gov (United States)

    Choi, Yoon Ho; Kim, Hyun Bin; Yang, In Seok; Sung, Sang Do; Choi, Young Sik; Kim, Jeongho; Lee, Wan In

    2017-08-02

    Thin films of a heteropolytungstate, lithium silicotungstate (Li 4 SiW 12 O 40 , termed Li-ST), prepared by a solution process at low temperature, were successfully applied as electron transporting layer (ETL) of planar-type perovskite solar cells (PSCs). Dense and uniform Li-ST films were prepared on FTO glass by depositing a thin Li-ST buffer layer, followed by coating of a main Li-ST layer. The film thickness was controlled by varying the number of coating cycles, consisting of spin-coating and thermal treatment at 150 °C. In particular, by employing 60 nm-thick Li-ST layer obtained by two cycles of coating, the fabricated CH 3 NH 3 PbI 3 PSC device demonstrates the photovoltaic conversion efficiency (PCE) of 14.26% with J SC of 22.16 mA cm -2 , V OC of 0.993 mV and FF of 64.81%. The obtained PCE is significantly higher than that of the PSC employing a TiO 2 layer processed at the same temperature (PCE = 12.27%). Spectroscopic analyses by time-resolved photoluminescence and pulsed light-induced transient measurement of photocurrent indicate that the Li-ST layer collects electrons from CH 3 NH 3 PbI 3 more efficiently and also exhibits longer electron lifetime than the TiO 2 layer thermally treated at 150 °C. Thus, Li-ST is considered to be a promising ETL material that can be applied for the fabrication of flexible PSC devices.

  4. Building an electronic resource collection a practical guide

    CERN Document Server

    Lee, Stuart D

    2004-01-01

    This practical book guides information professionals step-by-step through building and managing an electronic resource collection. It outlines the range of electronic products currently available in abstracting and indexing, bibliographic, and other services and then describes how to effectively select, evaluate and purchase them.

  5. Atomic layer deposition of dielectrics for carbon-based electronics

    Energy Technology Data Exchange (ETDEWEB)

    Kim, J., E-mail: jiyoung.kim@utdallas.edu; Jandhyala, S.

    2013-11-01

    Carbon based nanomaterials like nanotubes and graphene have emerged as future generation electronic materials for device applications because of their interesting properties such as high-mobility and ability to carry high-current densities compared to conventional semiconductor materials like silicon. Therefore, there is a need to develop techniques to integrate robust gate dielectrics with high-quality interfaces for these materials in order to attain maximum performance. To date, a variety of methods including physical vapor deposition, atomic layer deposition (ALD), physical assembly among others have been employed in order to integrate dielectrics for carbon nanotube and graphene based field-effect transistors. Owing to the difficulty in wetting pristine surfaces of nanotubes and graphene, most of the ALD methods require a seeding technique involving non-covalent functionalization of their surfaces in order to nucleate dielectric growth while maintaining their intrinsic properties. A comprehensive review regarding the various dielectric integration schemes for emerging devices and their limitations with respect to ALD based methods along with a future outlook is provided. - Highlights: • We introduce various dielectric integration schemes for carbon-based devices. • Physical vapor deposition methods tend to degrade device performance. • Atomic layer deposition on pristine surfaces of graphene and nanotube is difficult. • We review different seeding techniques for atomic layer deposition of dielectrics. • Compare the performance of graphene top-gate devices with different dielectrics.

  6. Atomic layer deposition of dielectrics for carbon-based electronics

    International Nuclear Information System (INIS)

    Kim, J.; Jandhyala, S.

    2013-01-01

    Carbon based nanomaterials like nanotubes and graphene have emerged as future generation electronic materials for device applications because of their interesting properties such as high-mobility and ability to carry high-current densities compared to conventional semiconductor materials like silicon. Therefore, there is a need to develop techniques to integrate robust gate dielectrics with high-quality interfaces for these materials in order to attain maximum performance. To date, a variety of methods including physical vapor deposition, atomic layer deposition (ALD), physical assembly among others have been employed in order to integrate dielectrics for carbon nanotube and graphene based field-effect transistors. Owing to the difficulty in wetting pristine surfaces of nanotubes and graphene, most of the ALD methods require a seeding technique involving non-covalent functionalization of their surfaces in order to nucleate dielectric growth while maintaining their intrinsic properties. A comprehensive review regarding the various dielectric integration schemes for emerging devices and their limitations with respect to ALD based methods along with a future outlook is provided. - Highlights: • We introduce various dielectric integration schemes for carbon-based devices. • Physical vapor deposition methods tend to degrade device performance. • Atomic layer deposition on pristine surfaces of graphene and nanotube is difficult. • We review different seeding techniques for atomic layer deposition of dielectrics. • Compare the performance of graphene top-gate devices with different dielectrics

  7. Electron tunneling in tantalum surface layers on niobium

    International Nuclear Information System (INIS)

    Ruggiero, S.T.; Track, E.K.; Prober, D.E.; Arnold, G.B.; DeWeert, M.J.

    1986-01-01

    We have performed electron tunneling measurements on tantalum surface layers on niobium. The tunnel junctions comprise 2000-A-circle Nb base electrodes with 10--100-A-circle in situ--deposited Ta overlayers, an oxide barrier, and Ag, Pb, or Pb-Bi alloy counterelectrodes. The base electrodes were prepared by ion-beam sputter deposition. The characteristics of these junctions have been studied as a function of Ta-layer thickness. These include the critical current, bound-state energy, phonon structure, and oxide barrier shape. We have compared our results for the product I/sub c/R versus tantalum-layer thickness with an extended version of the Gallagher theory which accounts for both the finite mean free path in the Ta overlayers and suppression of the I/sub c/R product due to strong-coupling effects. Excellent fits to the data yield a value of the intrinsic scattering probability for electrons at the Ta/Nb interface of r 2 = 0.01. This is consistent with the value expected from simple scattering off the potential step created by the difference between the Fermi energies of Ta and Nb. We have found a universal empirical correlation in average barrier height phi-bar and width s in the form phi-bar = 6 eV/(s-10 A-circle) for measured junctions which holds both for our data and results for available data in the literature for oxide-barrier junctions. The latter are composed of a wide variety of base and counterelectrode materials. These results are discussed in the general context of oxide growth and compared with results for artificial tunnel barriers

  8. Redesigning a collection system for "small" consumer electronics

    NARCIS (Netherlands)

    Melissen, Franciscus

    2006-01-01

    This paper establishes that the collection system within the recycling scheme for consumer electronics in the Netherlands has not been entirely successful in convincing consumers to hand in their used appliances by means of dedicated collection routes. Particularly regarding small appliances,

  9. Measurements and simulations of seeded electron microbunches with collective effects

    Directory of Open Access Journals (Sweden)

    K. Hacker

    2015-09-01

    Full Text Available Measurements of the longitudinal phase-space distributions of electron bunches seeded with an external laser were done in order to study the impact of collective effects on seeded microbunches in free-electron lasers. When the collective effects of Coulomb forces in a drift space and coherent synchrotron radiation in a chicane are considered, velocity bunching of a seeded microbunch appears to be a viable alternative to compression with a magnetic chicane under high-gain harmonic generation seeding conditions. Measurements of these effects on seeded electron microbunches were performed with a rf deflecting structure and a dipole magnet which streak out the electron bunch for single-shot images of the longitudinal phase-space distribution. Particle tracking simulations in 3D predicted the compression dynamics of the seeded microbunches with collective effects.

  10. Electron emission from a double-layer metal under femtosecond laser irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Li, Shuchang; Li, Suyu; Jiang, Yuanfei; Chen, Anmin, E-mail: amchen@jlu.edu.cn; Ding, Dajun; Jin, Mingxing, E-mail: mxjin@jlu.edu.cn

    2015-01-01

    In this paper we theoretically investigate electron emission during femtosecond laser ablation of single-layer metal (copper) and double-layer structures. The double-layer structure is composed of a surface layer (copper) and a substrate layer (gold or chromium). The calculated results indicate that the double-layer structure brings a change to the electron emission from the copper surface. Compared with the ablation of a single-layer, a double-layer structure may be helpful to decrease the relaxation time of the electron temperature, and optimize the electron emission by diminishing the tailing phenomenon under the same absorbed laser fluence. With the increase of the absorbed laser fluence, the effect of optimization becomes significant. This study provides a way to optimize the electron emission which can be beneficial to generate laser induced ultrafast electron pulse sources.

  11. Wave propagation through an electron cyclotron resonance layer

    International Nuclear Information System (INIS)

    Westerhof, E.

    1997-01-01

    The propagation of a wave beam through an electron cyclotron resonance layer is analysed in two-dimensional slab geometry in order to assess the deviation from cold plasma propagation due to resonant, warm plasma changes in wave dispersion. For quasi-perpendicular propagation, N ' 'parallel to'' ≅ v t /c, an O-mode beam is shown to exhibit a strong wiggle in the trajectory of the centre of the beam when passing through the fundamental electron cyclotron resonance. The effects are largest for low temperatures and close to perpendicular propagation. Predictions from standard dielectric wave energy fluxes are inconsistent with the trajectory of the beam. Qualitatively identical results are obtained for the X-mode second harmonic. In contrast, the X-mode at the fundamental resonance shows significant deviations form cold plasma propagation only for strongly oblique propagation and/or high temperatures. On the basis of the obtained results a practical suggestion is made for ray tracing near electron cyclotron resonance. (Author)

  12. Single-layer MoS2 electronics.

    Science.gov (United States)

    Lembke, Dominik; Bertolazzi, Simone; Kis, Andras

    2015-01-20

    CONSPECTUS: Atomic crystals of two-dimensional materials consisting of single sheets extracted from layered materials are gaining increasing attention. The most well-known material from this group is graphene, a single layer of graphite that can be extracted from the bulk material or grown on a suitable substrate. Its discovery has given rise to intense research effort culminating in the 2010 Nobel Prize in physics awarded to Andre Geim and Konstantin Novoselov. Graphene however represents only the proverbial tip of the iceberg, and increasing attention of researchers is now turning towards the veritable zoo of so-called "other 2D materials". They have properties complementary to graphene, which in its pristine form lacks a bandgap: MoS2, for example, is a semiconductor, while NbSe2 is a superconductor. They could hold the key to important practical applications and new scientific discoveries in the two-dimensional limit. This family of materials has been studied since the 1960s, but most of the research focused on their tribological applications: MoS2 is best known today as a high-performance dry lubricant for ultrahigh-vacuum applications and in car engines. The realization that single layers of MoS2 and related materials could also be used in functional electronic devices where they could offer advantages compared with silicon or graphene created a renewed interest in these materials. MoS2 is currently gaining the most attention because the material is easily available in the form of a mineral, molybdenite, but other 2D transition metal dichalcogenide (TMD) semiconductors are expected to have qualitatively similar properties. In this Account, we describe recent progress in the area of single-layer MoS2-based devices for electronic circuits. We will start with MoS2 transistors, which showed for the first time that devices based on MoS2 and related TMDs could have electrical properties on the same level as other, more established semiconducting materials. This

  13. The electron-electron instability in a spherical plasma structure with an intermediate double layer

    International Nuclear Information System (INIS)

    Lapuerta, V.; Ahedo, E.

    2003-01-01

    A linear dynamic model of a spherical plasma structure with an intermediate double layer is analyzed in the high-frequency range. The two ion populations tend to stay frozen in their stationary response and this prevents the displacement of the double layer. Different electron modes dominate the plasma dynamics in each quasineutral region. The electrostatic potential and the electron current are the magnitudes most perturbed. The structure develops a reactive electron-electron instability, which is made up of a countable family of eigenmodes. Space-charge effects must be included in the quasineutral regions to determine the eigenmode carrying the maximum growth rate. Except for very small Debye lengths, the fundamental eigenmode governs the instability. The growth rate for the higher harmonics approaches that of an infinite plasma. The instability modes develop mainly on the plasma at the high-potential side of the double layer. The influence of the parameters defining the stationary solution on the instability growth rate is investigated, and the parametric regions of stability are found. The comparison with a couple of experiments on plasma contactors is satisfactory

  14. Ion collection efficiency of ionization chambers in electron beams

    International Nuclear Information System (INIS)

    Garcia, S.; Cecatti, E.R.

    1984-01-01

    When ionization chambers are used in pulsed radiation beams the high-density of ions produced per pulse permits ion recombination, demanding the use of a correction factor. An experimental technique using the charge collected at two different voltages permits the calculation of the ion collection efficiency. The ion collection efficiency of some common ionization chambers in pulsed electron beams were studied as a function of electron energy, dose rate and depth. Accelerators with magnetic scanning system, in which the instantaneous dose rate is much greater than the average dose rate, present a smaller collection efficiency than accelerators with scattering foil. The results lead to the introduction of a correction factor for ion recombination that is the reciprocal of the ion collection efficiency. It is also suggested a simple technique to connect an external variable DC power supply in a Baldwin Farmer dosemeter. (Author) [pt

  15. Vibrational excitations in molecular layers probed by ballistic electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Kajen, Rasanayagam Sivasayan; Chandrasekhar, Natarajan [Institute of Materials Research and Engineering, 3 Research Link, 117602 (Singapore); Feng Xinliang; Muellen, Klaus [Max-Planck-Institut fuer Polymerforschung, Postfach 3148, D-55021 Mainz (Germany); Su Haibin, E-mail: n-chandra@imre.a-star.edu.sg, E-mail: muellen@mpip-mainz.mpg.de, E-mail: hbsu@ntu.edu.sg [Division of Materials Science, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore)

    2011-10-28

    We demonstrate the information on molecular vibrational modes via the second derivative (d{sup 2}I{sub B}/dV{sup 2}) of the ballistic electron emission spectroscopy (BEES) current. The proposed method does not create huge fields as in the case of conventional derivative spectroscopy and maintains a zero bias across the device. BEES studies carried out on three different types of large polycyclic aromatic hydrocarbon (PAH) molecular layers show that the d{sup 2}I{sub B}/dV{sup 2} spectra consist of uniformly spaced peaks corresponding to vibronic excitations. The peak spacing is found to be identical for molecules within the same PAH family though the BEES onset voltage varies for different molecules. In addition, injection into a particular orbital appears to correspond to a specific vibrational mode as the manifestation of the symmetry principle.

  16. Collecting verbal autopsies: improving and streamlining data collection processes using electronic tablets.

    Science.gov (United States)

    Flaxman, Abraham D; Stewart, Andrea; Joseph, Jonathan C; Alam, Nurul; Alam, Sayed Saidul; Chowdhury, Hafizur; Mooney, Meghan D; Rampatige, Rasika; Remolador, Hazel; Sanvictores, Diozele; Serina, Peter T; Streatfield, Peter Kim; Tallo, Veronica; Murray, Christopher J L; Hernandez, Bernardo; Lopez, Alan D; Riley, Ian Douglas

    2018-02-01

    There is increasing interest in using verbal autopsy to produce nationally representative population-level estimates of causes of death. However, the burden of processing a large quantity of surveys collected with paper and pencil has been a barrier to scaling up verbal autopsy surveillance. Direct electronic data capture has been used in other large-scale surveys and can be used in verbal autopsy as well, to reduce time and cost of going from collected data to actionable information. We collected verbal autopsy interviews using paper and pencil and using electronic tablets at two sites, and measured the cost and time required to process the surveys for analysis. From these cost and time data, we extrapolated costs associated with conducting large-scale surveillance with verbal autopsy. We found that the median time between data collection and data entry for surveys collected on paper and pencil was approximately 3 months. For surveys collected on electronic tablets, this was less than 2 days. For small-scale surveys, we found that the upfront costs of purchasing electronic tablets was the primary cost and resulted in a higher total cost. For large-scale surveys, the costs associated with data entry exceeded the cost of the tablets, so electronic data capture provides both a quicker and cheaper method of data collection. As countries increase verbal autopsy surveillance, it is important to consider the best way to design sustainable systems for data collection. Electronic data capture has the potential to greatly reduce the time and costs associated with data collection. For long-term, large-scale surveillance required by national vital statistical systems, electronic data capture reduces costs and allows data to be available sooner.

  17. Interpretation of electron beam induced charging of oxide layers in a transistor studied using electron holography

    DEFF Research Database (Denmark)

    Ubaldi, F; Pozzi, G; Kasama, Takeshi

    2010-01-01

    Off-axis electron holography has been used to characterize a linear array of transistors, which was prepared for examination in cross-sectional geometry in the transmission electron microscope using focused ion beam milling. In reconstructed phase images, regions of silicon oxide that are located...... into account the mean inner potential of the specimen and the perturbed vacuum reference wave. The simulations suggest that the oxide layers contain a uniform volume density of positive charge and that the elliptical contours result from the combined effect of the electrostatic potential in the specimen...

  18. Layered Black Phosphorus: Strongly Anisotropic Magnetic, Electronic, and Electron-Transfer Properties.

    Science.gov (United States)

    Sofer, Zdeněk; Sedmidubský, David; Huber, Štěpán; Luxa, Jan; Bouša, Daniel; Boothroyd, Chris; Pumera, Martin

    2016-03-01

    Layered elemental materials, such as black phosphorus, exhibit unique properties originating from their highly anisotropic layered structure. The results presented herein demonstrate an anomalous anisotropy for the electrical, magnetic, and electrochemical properties of black phosphorus. It is shown that heterogeneous electron transfer from black phosphorus to outer- and inner-sphere molecular probes is highly anisotropic. The electron-transfer rates differ at the basal and edge planes. These unusual properties were interpreted by means of calculations, manifesting the metallic character of the edge planes as compared to the semiconducting properties of the basal plane. This indicates that black phosphorus belongs to a group of materials known as topological insulators. Consequently, these effects render the magnetic properties highly anisotropic, as both diamagnetic and paramagnetic behavior can be observed depending on the orientation in the magnetic field. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Atto-second control of collective electron motion in plasmas

    International Nuclear Information System (INIS)

    Borot, Antonin; Malvache, Arnaud; Chen, Xiaowei; Jullien, Aurelie; Lopez-Martens, Rodrigo; Geindre, Jean-Paul; Audebert, Patrick; Mourou, Gerard; Quere, Fabien

    2012-01-01

    Today, light fields of controlled and measured waveform can be used to guide electron motion in atoms and molecules with atto-second precision. Here, we demonstrate atto-second control of collective electron motion in plasmas driven by extreme intensity (approximate to 10 18 W cm -2 ) light fields. Controlled few-cycle near-infrared waves are tightly focused at the interface between vacuum and a solid-density plasma, where they launch and guide sub-cycle motion of electrons from the plasma with characteristic energies in the multi-kilo-electron-volt range-two orders of magnitude more than has been achieved so far in atoms and molecules. The basic spectroscopy of the coherent extreme ultraviolet radiation emerging from the light-plasma interaction allows us to probe this collective motion of charge with sub-200 as resolution. This is an important step towards atto-second control of charge dynamics in laser-driven plasma experiments. (authors)

  20. Electron and Hole Transport Layers: Their Use in Inverted Bulk Heterojunction Polymer Solar Cells

    Directory of Open Access Journals (Sweden)

    Sandro Lattante

    2014-03-01

    Full Text Available Bulk heterojunction polymer solar cells (BHJ PSCs are very promising organic-based devices for low-cost solar energy conversion, compatible with roll-to-roll or general printing methods for mass production. Nevertheless, to date, many issues should still be addressed, one of these being the poor stability in ambient conditions. One elegant way to overcome such an issue is the so-called “inverted” BHJ PSC, a device geometry in which the charge collection is reverted in comparison with the standard geometry device, i.e., the electrons are collected by the bottom electrode and the holes by the top electrode (in contact with air. This reverted geometry allows one to use a high work function top metal electrode, like silver or gold (thus avoiding its fast oxidation and degradation, and eliminates the need of a polymeric hole transport layer, typically of an acidic nature, on top of the transparent metal oxide bottom electrode. Moreover, this geometry is fully compatible with standard roll-to-roll manufacturing in air and is less demanding for a good post-production encapsulation process. To date, the external power conversion efficiencies of the inverted devices are generally comparable to their standard analogues, once both the electron transport layer and the hole transport layer are fully optimized for the particular device. Here, the most recent results on this particular optimization process will be reviewed, and a general outlook regarding the inverted BHJ PSC will be depicted.

  1. One-Dimensional Electron Transport Layers for Perovskite Solar Cells

    Directory of Open Access Journals (Sweden)

    Ujwal K. Thakur

    2017-04-01

    Full Text Available The electron diffusion length (Ln is smaller than the hole diffusion length (Lp in many halide perovskite semiconductors meaning that the use of ordered one-dimensional (1D structures such as nanowires (NWs and nanotubes (NTs as electron transport layers (ETLs is a promising method of achieving high performance halide perovskite solar cells (HPSCs. ETLs consisting of oriented and aligned NWs and NTs offer the potential not merely for improved directional charge transport but also for the enhanced absorption of incoming light and thermodynamically efficient management of photogenerated carrier populations. The ordered architecture of NW/NT arrays affords superior infiltration of a deposited material making them ideal for use in HPSCs. Photoconversion efficiencies (PCEs as high as 18% have been demonstrated for HPSCs using 1D ETLs. Despite the advantages of 1D ETLs, there are still challenges that need to be overcome to achieve even higher PCEs, such as better methods to eliminate or passivate surface traps, improved understanding of the hetero-interface and optimization of the morphology (i.e., length, diameter, and spacing of NWs/NTs. This review introduces the general considerations of ETLs for HPSCs, deposition techniques used, and the current research and challenges in the field of 1D ETLs for perovskite solar cells.

  2. One-Dimensional Electron Transport Layers for Perovskite Solar Cells

    Science.gov (United States)

    Thakur, Ujwal K.; Kisslinger, Ryan; Shankar, Karthik

    2017-01-01

    The electron diffusion length (Ln) is smaller than the hole diffusion length (Lp) in many halide perovskite semiconductors meaning that the use of ordered one-dimensional (1D) structures such as nanowires (NWs) and nanotubes (NTs) as electron transport layers (ETLs) is a promising method of achieving high performance halide perovskite solar cells (HPSCs). ETLs consisting of oriented and aligned NWs and NTs offer the potential not merely for improved directional charge transport but also for the enhanced absorption of incoming light and thermodynamically efficient management of photogenerated carrier populations. The ordered architecture of NW/NT arrays affords superior infiltration of a deposited material making them ideal for use in HPSCs. Photoconversion efficiencies (PCEs) as high as 18% have been demonstrated for HPSCs using 1D ETLs. Despite the advantages of 1D ETLs, there are still challenges that need to be overcome to achieve even higher PCEs, such as better methods to eliminate or passivate surface traps, improved understanding of the hetero-interface and optimization of the morphology (i.e., length, diameter, and spacing of NWs/NTs). This review introduces the general considerations of ETLs for HPSCs, deposition techniques used, and the current research and challenges in the field of 1D ETLs for perovskite solar cells. PMID:28468280

  3. Cyclotron resonance study of the two-dimensional electron layers and double layers in tilted magnetic fields

    Czech Academy of Sciences Publication Activity Database

    Goncharuk, Natalya; Smrčka, Ludvík; Kučera, Jan

    2004-01-01

    Roč. 22, - (2004), s. 590-593 ISSN 1386-9477. [International Conference on Electronic Properties of Two-Dimensional Systems /15./. Nara, 14.07.2003-18.07.2003] R&D Projects: GA ČR GA202/01/0754 Institutional research plan: CEZ:AV0Z1010914 Keywords : single layer * double layer * two-dimensional electron system * cyclotron resonance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.898, year: 2004

  4. 23 CFR 950.5 - Requirement to use electronic toll collection technology.

    Science.gov (United States)

    2010-04-01

    ... shall use an electronic toll collection system as the method for collecting tolls from vehicle operators... 23 Highways 1 2010-04-01 2010-04-01 false Requirement to use electronic toll collection technology... TRANSPORTATION SYSTEMS ELECTRONIC TOLL COLLECTION § 950.5 Requirement to use electronic toll collection...

  5. Electronic spectra of anions intercalated in layered double hydroxides

    Indian Academy of Sciences (India)

    groups of the layers and interlayer water through the termi- nal atom symmetry ... results in a reaction with the metal hydroxide layers lead- ing to the ..... List of band positions observed for potassium salts of anion and LDH samples. Salts.

  6. Quality assurance and data collection -- Electronic Data Transfer

    International Nuclear Information System (INIS)

    Tomczak, L.M.; Lohner, W.G.; Ray, E.C.; Salesky, J.A.; Spitz, H.B.

    1993-05-01

    The Radiological Environmental Monitoring (REM) group at the Fernald Environmental Management Project is involved in an Electronic Data Transfer practice that will result in the improved quality assurance of collected data. This practice focuses on electronic data transfer from the recording instrument to reduce the manpower normally required for manual data entry and improve the quality of the data transferred. The application of this practice can enhance any data collection program where instruments with electronic memories and a signal output are utilized. Organizations employing this practice can strengthen the quality and efficiency of their data collection program. The use of these practices can assist in complying with Quality Assurance requirements under ASME NQA-1, RCRA, CERCLA, and DOE Order activities. Data from Pylon AB-5 instrumentation is typically configured to print data to a tape. The REM group has developed a process to electronically transfer stored data. The data are sent from the Pylon AB-5 field instrument to a HewlettPackard portable hand computer, model HP95LX. Data are recorded and stored on a 128 K-byte RAN card and later transferred to a PC database as an electronic file for analysis. The advantage of this system is twofold: (1) Data entry errors are eliminated and (2) considerable data collection and entry time is eliminated. Checks can then be conducted for data validity between recorded intervals due to light leaks etc. and the detection of outliers. This paper will discuss the interface and connector components that allow this transfer of data from the Pylon to the PC to take place and the process to perform that activity

  7. Enhanced Performance of Dye-Sensitized Solar Cells with Nanostructure Graphene Electron Transfer Layer

    Directory of Open Access Journals (Sweden)

    Chih-Hung Hsu

    2014-01-01

    Full Text Available The utilization of nanostructure graphene thin films as electron transfer layer in dye-sensitized solar cells (DSSCs was demonstrated. The effect of a nanostructure graphene thin film in DSSC structure was examined. The nanostructure graphene thin films provides a great electron transfer channel for the photogenerated electrons from TiO2 to indium tin oxide (ITO glass. Obvious improvements in short-circuit current density of the DSSCs were observed by using the graphene electron transport layer modified photoelectrode. The graphene electron transport layer reduces effectively the back reaction in the interface between the ITO transparent conductive film and the electrolyte in the DSSC.

  8. Electronic structure and electron-phonon coupling in layered copper oxide superconductors

    International Nuclear Information System (INIS)

    Pickett, W.E.; Cohen, R.E.; Krakauer, H.

    1991-01-01

    Experimental data on the layered Cu-O superconductors seem more and more to reflect normal Fermi-liquid behavior and substantial correspondence with band structure predictions. Recent self-consistent, microscopic band theoretic calculations of the electronic structure, lattice instabilities, phonon frequencies, and electron-phonon coupling characteristics and strength for La 2 CuO 4 and YBa 2 Cu 3 O 7 are reviewed. A dominant feature of the coupling is a novel Madelung-like contribution which would be screened out in high density of states superconductors but survives in cuprates because of weak screening. Local density functional theory correctly predicts the instability of (La, Ba) 2 CuO 4 to both the low-temperature orthorhombic phase (below room temperature) and the lower-temperature tetragonal phase (below 50 K). (orig.)

  9. Analysis of Boundary Layer Meteorological Data Collected at the White Sands Missile Range

    National Research Council Canada - National Science Library

    O'Brien, Sean; Tofsted, David; Yarbrough, Jimmy; Elliott, D. S; Quintis, David

    2007-01-01

    ... Sands Missile Range (WSMR). Our primary motivation for collecting these measurements is to refine the accuracy of outer and inner scale effects models for optical, thermal, and absolute humidity turbulence for the desert boundary layer...

  10. Optoelectronic devices, low temperature preparation methods, and improved electron transport layers

    KAUST Repository

    Eita, Mohamed S.

    2016-08-04

    An optoelectronic device such as a photovoltaic device which has at least one layer, such as an electron transport layer, which comprises a plurality of alternating, oppositely charged layers including metal oxide layers. The metal oxide can be zinc oxide. The plurality of layers can be prepared by layer-by-layer processing in which alternating layers are built up step-by-step due to electrostatic attraction. The efficiency of the device can be increased by this processing method compared to a comparable method like sputtering. The number of layers can be controlled to improve device efficiency. Aqueous solutions can be used which is environmentally friendly. Annealing can be avoided. A quantum dot layer can be used next to the metal oxide layer to form a quantum dot heterojunction solar device.

  11. 77 FR 56847 - Agency Information Collection Activities; Proposed Collection; Comment Request; Electronic...

    Science.gov (United States)

    2012-09-14

    ... Number 0910-0645)--Revision The SRP (formerly referred to as the MedWatch\\Plus\\ Portal and Rational Questionnaire) and the ESG are the Agency's electronic systems for collecting, submitting, and processing... ESG, approved under OMB control number 0910-0645. III. The FDA Safety Reporting Portal Rational...

  12. SiNx layers on nanostructured Si solar cells: Effective for optical absorption and carrier collection

    International Nuclear Information System (INIS)

    Cho, Yunae; Kim, Eunah; Gwon, Minji; Kim, Dong-Wook; Park, Hyeong-Ho; Kim, Joondong

    2015-01-01

    We compared nanopatterned Si solar cells with and without SiN x layers. The SiN x layer coating significantly improved the internal quantum efficiency of the nanopatterned cells at long wavelengths as well as short wavelengths, whereas the surface passivation helped carrier collection of flat cells mainly at short wavelengths. The surface nanostructured array enhanced the optical absorption and also concentrated incoming light near the surface in broad wavelength range. Resulting high density of the photo-excited carriers near the surface could lead to significant recombination loss and the SiN x layer played a crucial role in the improved carrier collection of the nanostructured solar cells

  13. A solution-processed binary cathode interfacial layer facilitates electron extraction for inverted polymer solar cells.

    Science.gov (United States)

    Zhang, Xinyuan; Li, Zhiqi; Liu, Chunyu; Guo, Jiaxin; Shen, Liang; Guo, Wenbin

    2018-03-15

    The charge transfer and separation are significantly affected by the electron properties of the interface between the electron-donor layer and the carrier-transporting layer in polymer solar cells (PSCs). In this study, we investigate the electron extraction mechanism of PSCs with a low temperature solution-processed ZnO/PEI as electron transport layer. The incorporation of PEI layer can decrease the work function of ZnO and reduce interfacial barrier, which facilitates electron extraction and suppresses bimolecular recombination, leading to a significant performance enhancement. Furthermore, PEI layer can induce phase separation and passivite inorganic surface trap states as well as shift the interfacial energy offset between metal oxide and organic materials. This work offers a simple and effective way to improve the charge transporting property of organic photovoltaic devices. Copyright © 2017 Elsevier Inc. All rights reserved.

  14. Wearable electronics formed on intermediate layer on textiles

    KAUST Repository

    Hussain, Muhammad Mustafa

    2017-01-01

    One manner of producing more desirable clothing with electronic capabilities is to manufacture electronics, such as the charging wires or devices themselves, directly onto the textile materials. Textile materials generally do not support

  15. Vertically aligned carbon nanotubes/diamond double-layered structure for improved field electron emission stability

    Energy Technology Data Exchange (ETDEWEB)

    Yang, L., E-mail: qiaoqin.yang@mail.usask.ca; Yang, Q.; Zhang, C.; Li, Y.S.

    2013-12-31

    A double-layered nanostructure consisting of a layer of vertically aligned Carbon Nanotubes (CNTs) and a layer of diamond beneath has been synthesized on silicon substrate by Hot Filament Chemical Vapor Deposition. The synthesis was achieved by first depositing a layer of diamond on silicon and then depositing a top layer of vertically aligned CNTs by applying a negative bias on the substrate holder. The growth of CNTs was catalyzed by a thin layer of spin-coated iron nitride. The surface morphology and structure of the CNTs/diamond double-layered structure were characterized by Scanning Electron Microscope, Energy Dispersive X-ray spectrum, and Raman Spectroscopy. Their field electron emission (FEE) properties were measured by KEITHLEY 237 high voltage measurement unit, showing much higher FEE current stability than single layered CNTs. - Highlights: • A new double-layered nanostructure consisting of a layer of vertically aligned CNTs and a layer of diamond beneath has been synthesized by hot filament chemical vapor deposition. • This double-layered structure exhibits superior field electron emission stability. • The improvement of emission stability is due to the combination of the unique properties of diamond and CNTs.

  16. Investigation of electronic quality of electrodeposited cadmium sulphide layers from thiourea precursor for use in large area electronics

    Energy Technology Data Exchange (ETDEWEB)

    Ojo, A.A., E-mail: chartell2006@yahoo.com; Dharmadasa, I.M.

    2016-09-01

    CdS layers used in thin film solar cells and other electronic devices are usually grown by wet chemical methods using CdCl{sub 2} as the Cadmium source and either Na{sub 2}S{sub 2}O{sub 3}, NH{sub 4}S{sub 2}O{sub 3} or NH{sub 2}CSNH{sub 2} as Sulphur sources. Obviously, one of the sulphur precursors should produce more suitable CdS layers required to give the highest performing devices. This can only be achieved by comprehensive experimental work on growth and characterisation of CdS layers from the above mentioned sulphur sources. This paper presents the results observed on CdS layers grown by electrodepositing using two electrode configuration and thiourea as the sulphur precursor. X-ray diffraction (XRD), Raman spectroscopy, optical absorption, scanning electron microscopy (SEM), energy-dispersive X-ray analysis (EDX) and photoelectrochemical (PEC) cell methods have been used to characterise the material properties. In order to test and study the electronic device quality of the layers, ohmic and rectifying contacts were fabricated on the electroplated layers. Schottky barriers, formed on the layers were also compared with previously reported work on Chemical Bath Deposited CBD-CdS layers and bulk single crystals of CdS. Comparatively, Schottky diodes fabricated on electroplated CdS layers using two-electrode system and thiourea precursor exhibit excellent electronic properties suitable for electronic devices such as thin film solar panels and large area display devices. - Highlights: • Precipitate-free electrodeposition of CdS is achievable using Thiourea precursor. • Electrodeposition of CdS using 2-electrode configuration. • The electrodeposited CdS shows excellent electronic properties. • Exploration of the effect of heat treatment temperature and heat treatment duration.

  17. Interfacial engineering of electron transport layer using Caesium Iodide for efficient and stable organic solar cells

    Science.gov (United States)

    Upama, Mushfika Baishakhi; Elumalai, Naveen Kumar; Mahmud, Md Arafat; Wright, Matthew; Wang, Dian; Xu, Cheng; Haque, Faiazul; Chan, Kah Howe; Uddin, Ashraf

    2017-09-01

    Polymer solar cells (PSCs) have gained immense research interest in the recent years predominantly due to low-cost, solution process-ability, and facile device fabrication. However, achieving high stability without compromising the power conversion efficiency (PCE) serves to be an important trade-off for commercialization. In line with this, we demonstrate the significance of incorporating a CsI/ZnO bilayer as electron transport layer (ETL) in the bulk heterojunction PSCs employing low band gap polymer (PTB7) and fullerene (PC71BM) as the photo-active layer. The devices with CsI/ZnO interlayer exhibited substantial enhancement of 800% and 12% in PCE when compared to the devices with pristine CsI and pristine ZnO as ETL, respectively. Furthermore, the UV and UV-ozone induced degradation studies revealed that the devices incorporating CsI/ZnO bilayer possess excellent decomposition stability (∼23% higher) over the devices with pristine ZnO counterparts. The incorporation of CsI between ITO and ZnO was found to favorably modify the energy-level alignment at the interface, contributing to the charge collection efficiency as well as protecting the adjacent light absorbing polymer layers from degradation. The mechanism behind the improvement in PCE and stability is analyzed using the electrochemical impedance spectroscopy and dark I-V characteristics.

  18. Atomic layer deposition in nanostructured photovoltaics: tuning optical, electronic and surface properties

    Science.gov (United States)

    Palmstrom, Axel F.; Santra, Pralay K.; Bent, Stacey F.

    2015-07-01

    Nanostructured materials offer key advantages for third-generation photovoltaics, such as the ability to achieve high optical absorption together with enhanced charge carrier collection using low cost components. However, the extensive interfacial areas in nanostructured photovoltaic devices can cause high recombination rates and a high density of surface electronic states. In this feature article, we provide a brief review of some nanostructured photovoltaic technologies including dye-sensitized, quantum dot sensitized and colloidal quantum dot solar cells. We then introduce the technique of atomic layer deposition (ALD), which is a vapor phase deposition method using a sequence of self-limiting surface reaction steps to grow thin, uniform and conformal films. We discuss how ALD has established itself as a promising tool for addressing different aspects of nanostructured photovoltaics. Examples include the use of ALD to synthesize absorber materials for both quantum dot and plasmonic solar cells, to grow barrier layers for dye and quantum dot sensitized solar cells, and to infiltrate coatings into colloidal quantum dot solar cell to improve charge carrier mobilities as well as stability. We also provide an example of monolayer surface modification in which adsorbed ligand molecules on quantum dots are used to tune the band structure of colloidal quantum dot solar cells for improved charge collection. Finally, we comment on the present challenges and future outlook of the use of ALD for nanostructured photovoltaics.

  19. Redesigning a collection system for 'small' consumer electronics

    International Nuclear Information System (INIS)

    Melissen, Frans W.

    2006-01-01

    This paper establishes that the collection system within the recycling scheme for consumer electronics in the Netherlands has not been entirely successful in convincing consumers to hand in their used appliances by means of dedicated collection routes. Particularly regarding small appliances, consumers are persisting in their habit of discarding their appliances by means of the refuse bag/bin for regular household waste. Therefore, the current collection system has been unable to direct consumer behavior in the desired direction. Consequently, the layout of the current system is reviewed and redesigned in order to tackle this problem. This design effort applies the Triad model (behavioral model) in the analysis stage and the Morphological Chart method (design tool) in the synthesis stage, and results in a concrete proposal for a new system. Finally, the applicability of this design approach beyond the specific circumstances of the case study presented in this paper is discussed. This case represents only one example of the broader, worldwide challenge to design appropriate collection systems to direct consumer behavior in desired directions. It is argued that the approach presented in this paper could be a valuable contribution to research dealing with this challenge

  20. Electronic structure and superconductivity of multi-layered organic charge transfer salts

    Energy Technology Data Exchange (ETDEWEB)

    Jeschke, Harald O.; Altmeyer, Michaela; Guterding, Daniel; Valenti, Roser [Institut fuer Theoretische Physik, Goethe-Universitaet Frankfurt, 60438 Frankfurt (Germany)

    2015-07-01

    We examine the electronic properties of polymorphs of (BEDT-TTF){sub 2}Ag(CF{sub 3}){sub 4}(TCE) (1,1,2-trichloroethane) within density functional theory (DFT). While a phase with low superconducting transition temperature T{sub c}=2.6 K exhibits a κ packing motif, two high T{sub c} phases are layered structures consisting of α{sup '} and κ packed layers. We determine the electronic structures and discuss the influence of the insulating α{sup '} layer on the conducting κ layer. In the κ-α{sub 1}{sup '} dual-layered compound, we find that the stripes of high and low charge in the α{sup '} layer correspond to a stripe pattern of hopping parameters in the κ layer. Based on the different underlying Hamiltonians, we study the superconducting properties and try to explain the differences in T{sub c}.

  1. Ultrafast Non-Thermal Electron Dynamics in Single Layer Graphene

    Directory of Open Access Journals (Sweden)

    Novoselov K.S.

    2013-03-01

    Full Text Available We study the ultrafast dynamics of non-thermal electron relaxation in graphene upon impulsive excitation. The 10-fs resolution two color pump-probe allows us to unveil the non-equilibrium electron gas decay at early times.

  2. The Time-Dependent Structure of the Electron Reconnection Layer

    Science.gov (United States)

    Hesse, Michael; Zenitani, Seiji; Kuznetsova, Masha; Klimas, Alex

    2009-01-01

    Collisionless magnetic reconnection is often associated with time-dependent behavior. Specifically, current layers in the diffusion region can become unstable to tearing-type instabilities on one hand, or to instabilities with current-aligned wave vectors on the other. In the former case, the growth of tearing instabilities typically leads to the production of magnetic islands, which potentially provide feedback on the reconnection process itself, as well as on the rate of reconnection. The second class of instabilities tend to modulate the current layer along the direction of the current flow, for instance generating kink-type perturbations, or smaller-scale turbulence with the potential to broaden the current layer. All of these processes contribute to rendering magnetic reconnection time-dependent. In this presentation, we will provide a summary of these effects, and a discussion of how much they contribute to the overall magnetic reconnection rate.

  3. Complex (Nonstandard) Six-Layer Polytypes of Lizardite Revealed from Oblique-Texture Electron Diffraction Patterns

    International Nuclear Information System (INIS)

    Zhukhlistov, A.P.; Zinchuk, N.N.; Kotel'nikov, D.D.

    2004-01-01

    Association of simple (1T and 3R) and two complex (nonstandard) orthogonal polytypes of the serpentine mineral lizardite from the Catoca kimberlite pipe (West Africa) association is revealed from oblique-texture electron diffraction patterns. A six-layer polytype with an ordered superposition of equally oriented layers (notation 3 2 3 2 3 4 3 4 3 6 3 6 or ++ - -00) belonging to the structural group A and a three-layer (336 or I,I,II) or a six-layer (336366 or I,I,II,I,II,II) polytype with alternating oppositely oriented layers and semi-disordered structure are identified using polytype analysis

  4. Effect of Vavilov–Cherenkov radiation cone transformation upon entry of a relativistic electron into a substance layer

    Energy Technology Data Exchange (ETDEWEB)

    Kishchin, I. A.; Kubankin, A. S., E-mail: kubankin@bsu.edu.ru; Nikulicheva, T. B.; Al-Omari; Sotnikov, A. V.; Starovoitov, A. S. [Belgorod National Research University (Russian Federation)

    2016-12-15

    Transformation of the Vavilov–Cherenkov radiation cone under grazing interaction of a relativistic electron with a layer of substance is theoretically studied. It is shown that this effect can occur when the electron enters the substance layer.

  5. Operating Organic Electronics via Aqueous Electric Double Layers

    OpenAIRE

    Toss, Henrik

    2015-01-01

    The field of organic electronics emerged in the 1970s with the discovery of conducting polymers. With the introduction of plastics as conductors and semiconductors came many new possibilities both in production and function of electronic devices. Polymers can often be processed from solution and their softness provides both the possibility of working on flexible substrates, and various advantages in interfacing with other soft materials, e.g. biological samples and specimens. Conducting polym...

  6. New real space correlated-basis-functions approach for the electron correlations of the semiconductor inversion layer

    International Nuclear Information System (INIS)

    Feng Weiguo; Wang Hongwei; Wu Xiang

    1989-12-01

    Based on the real space Correlated-Basis-Functions theory and the collective oscillation behaviour of the electron gas with effective Coulomb interaction, the many body wave function is obtained for the quasi-two-dimensional electron system in the semiconductor inversion layer. The pair-correlation function and the correlation energy of the system have been calculated by the integro-differential method in this paper. The comparison with the other previous theoretical results is also made. The new theoretical approach and its numerical results show that the pair-correlation functions are definitely positive and satisfy the normalization condition. (author). 10 refs, 2 figs

  7. Generalized expressions for variations in critical frequencies, electron densities and altitudes of the ionospheric layers

    International Nuclear Information System (INIS)

    Njau, E.C.

    1990-12-01

    We develop generalized mathematical expressions for time and space variations of peak electron densities of the ionospheric D, E, F1 and F2 layers as well as corresponding variations in the altitudes of the electron density peaks in each of these layers. On the basis of the Chapman characteristics of the E and F1 layers and other techniques, a generalized expression is developed for the electron density height profile of each of the four ionospheric layers. Consequently a generalized mathematical expression is developed for the entire electron density height profile of the whole ionosphere as a function of time, latitude and longitude. The latter mathematical expression may be used to compute or predict ionospheric parameters associated with ratio and satellite communications. Finally we show that some well documented equations on ionospheric parameters are simplified (or approximated) versions of some of our mathematical expressions. (author). 29 refs

  8. On the gyro resonance electron-whistler interaction in transition layers of near-earth plasma

    International Nuclear Information System (INIS)

    Erokhin, N.S.; Zol'nikova, N.N.; Mikhajlovskaya, L.A.

    1996-01-01

    Gyro resonance interaction of electrons with low amplitude triggered whistler in the transition layers of the ionospheric and magnetospheric plasma that correspond to the blurred jumps of the magnetic field and plasma concentration was studied

  9. Local Electronic Structure of a Single-Layer Porphyrin-Containing Covalent Organic Framework

    KAUST Repository

    Chen, Chen; Joshi, Trinity; Li, Huifang; Chavez, Anton D.; Pedramrazi, Zahra; Liu, Pei-Nian; Li, Hong; Dichtel, William R.; Bredas, Jean-Luc; Crommie, Michael F.

    2017-01-01

    We have characterized the local electronic structure of a porphyrin-containing single-layer covalent organic framework (COF) exhibiting a square lattice. The COF monolayer was obtained by the deposition of 2,5-dimethoxybenzene-1,4-dicarboxaldehyde

  10. Hand-held electronic data collection and procedure environment

    International Nuclear Information System (INIS)

    Kennedy, E.; Doniz, K.

    1996-01-01

    As part of a CANDU Owners Group project, AECL has developed a hand-held electronic data collection and procedure environment. Integral to this environment is the C omputerized Procedure Engine . The development of the CPE allows operators, maintainers, and technical support staff to execute virtually any type of station procedure on a general-purpose PC-compatible hand-held computer. There are several advantages to using the computerized procedures: less paper use and handling, reduction in human error, reduction in rework in the field, an increase in procedural compliance, and immediate availability of data to download to databases and plant information systems. The paper describes: the advantages of using computerized procedures, why early forms of computerized procedures were inadequate, the features that the C omputerized Procedure Engine o ffers to the user, the streamlined life cycle of a computerized procedure, and field experience. The paper concludes that computerized procedures are ready for pilot applications at stations. (author)

  11. Quantitative Collection and Enzymatic Activity of Glucose Oxidase Nanotubes Fabricated by Templated Layer-by-Layer Assembly.

    Science.gov (United States)

    Zhang, Shouwei; Demoustier-Champagne, Sophie; Jonas, Alain M

    2015-08-10

    We report on the fabrication of enzyme nanotubes in nanoporous polycarbonate membranes via the layer-by-layer (LbL) alternate assembly of polyethylenimine (PEI) and glucose oxidase (GOX), followed by dissolution of the sacrificial template in CH2Cl2, collection, and final dispersion in water. An adjuvant-assisted filtration methodology is exploited to extract quantitatively the nanotubes without loss of activity and morphology. Different water-soluble CH2Cl2-insoluble adjuvants are tested for maximal enzyme activity and nanotube stability; whereas NaCl disrupts the tubes by screening electrostatic interactions, the high osmotic pressure created by fructose also contributes to loosening the nanotubular structures. These issues are solved when using neutral, high molar mass dextran. The enzymatic activity of intact free nanotubes in water is then quantitatively compared to membrane-embedded nanotubes, showing that the liberated nanotubes have a higher catalytic activity in proportion to their larger exposed surface. Our study thus discloses a robust and general methodology for the fabrication and quantitative collection of enzymatic nanotubes and shows that LbL assembly provides access to efficient enzyme carriers for use as catalytic swarming agents.

  12. Formation of presheath and current-free double layer in a two-electron-temperature plasma

    International Nuclear Information System (INIS)

    Sato, Kunihiro; Miyawaki, Fujio

    1992-02-01

    Development of the steady-state potential in a two-temperature-electron plasma in contact with the wall is investigated analytically. It is shown that if the hot- to cold electron temperature ratio is greater than ten, the potential drop in the presheath, which is allowed to have either a small value characterized by the cold electrons or a large value by the hot electrons, discontinuously changes at a critical value for the hot- to total electron density ratio. It is also found that the monotonically decreasing potential structure which consists of the first presheath, a current-free double layer, the second presheath, and the sheath can be steadily formed in a lower range of the hot- to total electron density ratio around the critical value. The current-free double layer is set up due to existence of the two electron species and cold ions generated by ionization so as to connect two presheath potentials at different levels. (author)

  13. Interlayer electron-hole pair multiplication by hot carriers in atomic layer semiconductor heterostructures

    Science.gov (United States)

    Barati, Fatemeh; Grossnickle, Max; Su, Shanshan; Lake, Roger; Aji, Vivek; Gabor, Nathaniel

    Two-dimensional heterostructures composed of atomically thin transition metal dichalcogenides provide the opportunity to design novel devices for the study of electron-hole pair multiplication. We report on highly efficient multiplication of interlayer electron-hole pairs at the interface of a tungsten diselenide / molybdenum diselenide heterostructure. Electronic transport measurements of the interlayer current-voltage characteristics indicate that layer-indirect electron-hole pairs are generated by hot electron impact excitation. Our findings, which demonstrate an efficient energy relaxation pathway that competes with electron thermalization losses, make 2D semiconductor heterostructures viable for a new class of hot-carrier energy harvesting devices that exploit layer-indirect electron-hole excitations. SHINES, an Energy Frontier Research Center funded by the U.S. Department of Energy, Air Force Office of Scientific Research.

  14. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer

    Science.gov (United States)

    Chavarkar, Prashant; Smorchkova, Ioulia P.; Keller, Stacia; Mishra, Umesh; Walukiewicz, Wladyslaw; Wu, Yifeng

    2005-02-01

    A Group III nitride based high electron mobility transistors (HEMT) is disclosed that provides improved high frequency performance. One embodiment of the HEMT comprises a GaN buffer layer, with an Al.sub.y Ga.sub.1-y N (y=1 or y 1) layer on the GaN buffer layer. An Al.sub.x Ga.sub.1-x N (0.ltoreq.x.ltoreq.0.5) barrier layer on to the Al.sub.y Ga.sub.1-y N layer, opposite the GaN buffer layer, Al.sub.y Ga.sub.1-y N layer having a higher Al concentration than that of the Al.sub.x Ga.sub.1-x N barrier layer. A preferred Al.sub.y Ga.sub.1-y N layer has y=1 or y.about.1 and a preferred Al.sub.x Ga.sub.1-x N barrier layer has 0.ltoreq.x.ltoreq.0.5. A 2DEG forms at the interface between the GaN buffer layer and the Al.sub.y Ga.sub.1-y N layer. Respective source, drain and gate contacts are formed on the Al.sub.x Ga.sub.1-x N barrier layer. The HEMT can also comprising a substrate adjacent to the buffer layer, opposite the Al.sub.y Ga.sub.1-y N layer and a nucleation layer between the Al.sub.x Ga.sub.1-x N buffer layer and the substrate.

  15. The growth and electronic structure of azobenzene-based functional molecules on layered crystals

    International Nuclear Information System (INIS)

    Iwicki, J; Ludwig, E; Buck, J; Kalläne, M; Kipp, L; Rossnagel, K; Köhler, F; Herges, R

    2012-01-01

    In situ ultraviolet photoelectron spectroscopy is used to study the growth of ultrathin films of azobenzene-based functional molecules (azobenzene, Disperse Orange 3 and a triazatriangulenium platform with an attached functional azo-group) on the layered metal TiTe 2 and on the layered semiconductor HfS 2 at liquid nitrogen temperatures. Effects of intermolecular interactions, of the substrate electronic structure, and of the thermal energy of the sublimated molecules on the growth process and on the adsorbate electronic structure are identified and discussed. A weak adsorbate-substrate interaction is particularly observed for the layered semiconducting substrate, holding the promise of efficient molecular photoswitching.

  16. Electronic THz-spectrometer for plasmonic enhanced deep subwavelength layer detection

    NARCIS (Netherlands)

    Berrier, A.; Schaafsma, M.C.; Gómez Rivas, J.; Schäfer-Eberwein, H.; Haring Bolivar, P.; Tripodi, L.; Matters-Kammerer, M.K.

    2015-01-01

    We demonstrate the operation of a miniaturized all-electronic CMOS based THz spectrometer with performances comparable to that of a THz-TDS spectrometer in the frequency range 20 to 220 GHz. The use of this all-electronic THz spectrometer for detection of a thin TiO2 layer and a B. subtilis bacteria

  17. Enhanced efficiency of organic solar cells by using ZnO as an electron-transport layer

    Science.gov (United States)

    Ullah, Irfan; Shah, Said Karim; Wali, Sartaj; Hayat, Khizar; Khattak, Shaukat Ali; Khan, Aurangzeb

    2017-12-01

    This paper reports the use of ZnO, processed by sol-gel, as an efficient electron-transport layer for inverted organic photovoltaic cells. The device with incorporated ZnO interlayer, annealed at 100 °C, between transparent electrode and blend film plays an effective role in enhancing photovoltaic properties: the short-circuit current density (J sc) doubles while open-circuit voltage (V oc) and fill factor increase by 0.12 V and 10 %, respectively. Power conversion efficiency (PCE) of solar cell increases, approximately, three times. The improvement in the PCE is attributed to the presence of ZnO which, being an electron-facilitating layer, provides an energy step for charge collection at electrodes.

  18. Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Golnaz Karbasian

    2017-03-01

    Full Text Available Single electron transistors are nanoscale electron devices that require thin, high-quality tunnel barriers to operate and have potential applications in sensing, metrology and beyond-CMOS computing schemes. Given that atomic layer deposition is used to form CMOS gate stacks with low trap densities and excellent thickness control, it is well-suited as a technique to form a variety of tunnel barriers. This work is a review of our recent research on atomic layer deposition and post-fabrication treatments to fabricate metallic single electron transistors with a variety of metals and dielectrics.

  19. Equilibrium and stability properties of relativistic electron rings and E-layers

    International Nuclear Information System (INIS)

    Uhm, H.

    1976-01-01

    Equilibrium and stability properties of magnetically confined partially-neutralized thin electron ring and E-layer are investigated using the Vlasov-Maxwell equations. The analysis is carried out within the context of the assumption that the minor dimensions (a,b) of the system are much less than the collisionless skin depth (c/antiω/sub p/). The equilibrium configuration of the E-layer is assumed to be an infinitely long, azimuthally symmetric hollow electron beam which is aligned parallel to a uniform axial magnetic field. On the other hand, the electron ring is located at the midplane of an externally imposed mirror field which acts to confine the ring both axially and radially. The equilibrium properties of the E-layer and electron ring are obtained self-consistently for several choices of equilibrium electron distribution function. The negative-mass instability analysis is carried out for the relativistic E-layer equilibrium in which all of the electrons have the same transverse energy and a spread in canonical angular momentum, assuming a fixed ion background. The ion resonance instability properties are investigated for a relativistic nonneutral E-layer aligned parallel to a uniform magnetic field and located between two ground coaxial cylindrical conductors. The stability properties of a nonrelativistic electron ring is investigated within the framework of the linearized Vlasov-Poisson equations. The dispersion relation is obtained for the self-consistent electron distribution function in which all electrons have the same value of energy an the same value of canonical angular momentum. The positive ions in the electron ring are assumed to form an immobile partially neutralizing background. The stability criteria as well as the instability growth rates are derived and discussed including the effect of geometrical configuration of the system. Equilibrium space-charge effects play a significant role in stability behavior

  20. Transport of energetic electrons in a magnetically expanding helicon double layer plasma

    International Nuclear Information System (INIS)

    Takahashi, Kazunori; Charles, Christine; Boswell, Rod; Cox, Wes; Hatakeyama, Rikizo

    2009-01-01

    Peripheral magnetic field lines extending from the plasma source into the diffusion chamber are found to separate two regions of Maxwellian electron energy probability functions: the central, ion-beam containing region with an electron temperature of 5 eV, and region near the chamber walls with electrons at 3 eV. Along the peripheral field lines a bi-Maxwellian population with a hot tail at 9 eV is shown to both originate from electrons in the source traveling downstream across the double layer and correspond to a local maximum in ion and electron densities.

  1. Vertical electron transport in van der Waals heterostructures with graphene layers

    International Nuclear Information System (INIS)

    Ryzhii, V.; Otsuji, T.; Ryzhii, M.; Aleshkin, V. Ya.; Dubinov, A. A.; Mitin, V.; Shur, M. S.

    2015-01-01

    We propose and analyze an analytical model for the self-consistent description of the vertical electron transport in van der Waals graphene-layer (GL) heterostructures with the GLs separated by the barriers layers. The top and bottom GLs serve as the structure emitter and collector. The vertical electron transport in such structures is associated with the propagation of the electrons thermionically emitted from GLs above the inter-GL barriers. The model under consideration describes the processes of the electron thermionic emission from and the electron capture to GLs. It accounts for the nonuniformity of the self-consistent electric field governed by the Poisson equation which accounts for the variation of the electron population in GLs. The model takes also under consideration the cooling of electrons in the emitter layer due to the Peltier effect. We find the spatial distributions of the electric field and potential with the high-electric-field domain near the emitter GL in the GL heterostructures with different numbers of GLs. Using the obtained spatial distributions of the electric field, we calculate the current-voltage characteristics. We demonstrate that the Peltier cooling of the two-dimensional electron gas in the emitter GL can strongly affect the current-voltage characteristics resulting in their saturation. The obtained results can be important for the optimization of the hot-electron bolometric terahertz detectors and different devices based on GL heterostructures

  2. Layered memristive and memcapacitive switches for printable electronics

    Science.gov (United States)

    Bessonov, Alexander A.; Kirikova, Marina N.; Petukhov, Dmitrii I.; Allen, Mark; Ryhänen, Tapani; Bailey, Marc J. A.

    2015-02-01

    Novel computing technologies that imitate the principles of biological neural systems may offer low power consumption along with distinct cognitive and learning advantages. The development of reliable memristive devices capable of storing multiple states of information has opened up new applications such as neuromorphic circuits and adaptive systems. At the same time, the explosive growth of the printed electronics industry has expedited the search for advanced memory materials suitable for manufacturing flexible devices. Here, we demonstrate that solution-processed MoOx/MoS2 and WOx/WS2 heterostructures sandwiched between two printed silver electrodes exhibit an unprecedentedly large and tunable electrical resistance range from 102 to 108 Ω combined with low programming voltages of 0.1-0.2 V. The bipolar resistive switching, with a concurrent capacitive contribution, is governed by an ultrathin (mechanisms of synaptic plasticity are implemented by applying a sequence of electrical pulses.

  3. High Efficiency Inverted Organic Solar Cells with a Neutral Fulleropyrrolidine Electron Collecting Interlayer

    KAUST Repository

    Xu, Weidong; Yan, Congfei; Kan, Zhipeng; Wang, Yang; Lai, Wen-Yong; Huang, Wei

    2016-01-01

    A novel fulleropyrrolidine derivative, named as FPNOH, was designed, synthesized and utilized as an efficient electron-collecting (EC) layer for inverted organic solar cells (i-OSCs). The grafted diethanolamino-polar moieties can not only trigger its function as an EC interlayer, but also induce orthogonal solubility that guarantees subsequent multi-layer processing without interfacial mixing. A higher power conversion efficiency (PCE) value of 8.34% was achieved for i-OSC devices with ITO/FPNOH EC electrode, compared to that of the sol-gel ZnO based reference devices with an optimized PCE value of 7.92%. High efficiency exceeding 7.7% was still achieved even for the devices with a relatively thick PFNOH film (16.9 nm). It is worthwhile to mention that this kind of material exhibits less thickness dependent performance, in contrast to widely utilized p-type conjugated polyelectrolytes (CPEs) as well as the non-conjugated polyelectrolytes (NCPEs). Further investigation on illuminating intensity dependent parameters revealed the role of FPNOH in reducing interfacial traps-induced recombination at ITO/active layer interface.

  4. High Efficiency Inverted Organic Solar Cells with a Neutral Fulleropyrrolidine Electron Collecting Interlayer

    KAUST Repository

    Xu, Weidong

    2016-05-20

    A novel fulleropyrrolidine derivative, named as FPNOH, was designed, synthesized and utilized as an efficient electron-collecting (EC) layer for inverted organic solar cells (i-OSCs). The grafted diethanolamino-polar moieties can not only trigger its function as an EC interlayer, but also induce orthogonal solubility that guarantees subsequent multi-layer processing without interfacial mixing. A higher power conversion efficiency (PCE) value of 8.34% was achieved for i-OSC devices with ITO/FPNOH EC electrode, compared to that of the sol-gel ZnO based reference devices with an optimized PCE value of 7.92%. High efficiency exceeding 7.7% was still achieved even for the devices with a relatively thick PFNOH film (16.9 nm). It is worthwhile to mention that this kind of material exhibits less thickness dependent performance, in contrast to widely utilized p-type conjugated polyelectrolytes (CPEs) as well as the non-conjugated polyelectrolytes (NCPEs). Further investigation on illuminating intensity dependent parameters revealed the role of FPNOH in reducing interfacial traps-induced recombination at ITO/active layer interface.

  5. Nonlinear electron acoustic structures generated on the high-potential side of a double layer

    Directory of Open Access Journals (Sweden)

    R. Pottelette

    2009-04-01

    Full Text Available High-time resolution measurements of the electron distribution function performed in the auroral upward current region reveals a large asymmetry between the low- and high-potential sides of a double-layer. The latter side is characterized by a large enhancement of a locally trapped electron population which corresponds to a significant part (~up to 30% of the total electron density. As compared to the background hot electron population, this trapped component has a very cold temperature in the direction parallel to the static magnetic field. Accordingly, the differential drift between the trapped and background hot electron populations generates high frequency electron acoustic waves in a direction quasi-parallel to the magnetic field. The density of the trapped electron population can be deduced from the frequency where the electron acoustic spectrum maximizes. In the auroral midcavity region, the electron acoustic waves may be modulated by an additional turbulence generated in the ion acoustic range thanks to the presence of a pre-accelerated ion beam located on the high-potential side of the double layer. Electron holes characterized by bipolar pulses in the electric field are sometimes detected in correlation with these electron acoustic wave packets.

  6. Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes

    International Nuclear Information System (INIS)

    Lu, Yu-Hsuan; Pilkuhn, Manfred H.; Fu, Yi-Keng; Chu, Mu-Tao; Huang, Shyh-Jer; Su, Yan-Kuin; Wang, Kang L.

    2014-01-01

    The influence of the AlGaN electron blocking layer (EBL) with graded aluminum composition on electron confinement and hole injection in AlGaN-based ultraviolet light-emitting diodes (LEDs) are investigated. The light output power of LED with graded AlGaN EBL was markedly improved, comparing to LED with conventional EBL. In experimental results, a high increment of 86.7% can be obtained in light output power. Simulation analysis shows that via proper modification of the barrier profile from the last barrier of the active region to EBL, not only the elimination of electron overflow to p-type layer can be achieved but also the hole injection into the active region can be enhanced, compared to a conventional LED structure. The dominant factor to the performance improvement is shown to be the modulation of polarization field by the graded Al composition in EBL

  7. Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Yu-Hsuan; Pilkuhn, Manfred H. [Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Fu, Yi-Keng; Chu, Mu-Tao [Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan (China); Huang, Shyh-Jer, E-mail: yksu@mail.ncku.edu.tw, E-mail: totaljer48@gmail.com [Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, California 90095 (United States); Su, Yan-Kuin, E-mail: yksu@mail.ncku.edu.tw, E-mail: totaljer48@gmail.com [Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Department of Electronic Engineering, Kun-Shan University, Tainan 71003, Taiwan (China); Wang, Kang L. [Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, California 90095 (United States)

    2014-03-21

    The influence of the AlGaN electron blocking layer (EBL) with graded aluminum composition on electron confinement and hole injection in AlGaN-based ultraviolet light-emitting diodes (LEDs) are investigated. The light output power of LED with graded AlGaN EBL was markedly improved, comparing to LED with conventional EBL. In experimental results, a high increment of 86.7% can be obtained in light output power. Simulation analysis shows that via proper modification of the barrier profile from the last barrier of the active region to EBL, not only the elimination of electron overflow to p-type layer can be achieved but also the hole injection into the active region can be enhanced, compared to a conventional LED structure. The dominant factor to the performance improvement is shown to be the modulation of polarization field by the graded Al composition in EBL.

  8. Lead Halide Perovskites as Charge Generation Layers for Electron Mobility Measurement in Organic Semiconductors.

    Science.gov (United States)

    Love, John A; Feuerstein, Markus; Wolff, Christian M; Facchetti, Antonio; Neher, Dieter

    2017-12-06

    Hybrid lead halide perovskites are introduced as charge generation layers (CGLs) for the accurate determination of electron mobilities in thin organic semiconductors. Such hybrid perovskites have become a widely studied photovoltaic material in their own right, for their high efficiencies, ease of processing from solution, strong absorption, and efficient photogeneration of charge. Time-of-flight (ToF) measurements on bilayer samples consisting of the perovskite CGL and an organic semiconductor layer of different thickness are shown to be determined by the carrier motion through the organic material, consistent with the much higher charge carrier mobility in the perovskite. Together with the efficient photon-to-electron conversion in the perovskite, this high mobility imbalance enables electron-only mobility measurement on relatively thin application-relevant organic films, which would not be possible with traditional ToF measurements. This architecture enables electron-selective mobility measurements in single components as well as bulk-heterojunction films as demonstrated in the prototypical polymer/fullerene blends. To further demonstrate the potential of this approach, electron mobilities were measured as a function of electric field and temperature in an only 127 nm thick layer of a prototypical electron-transporting perylene diimide-based polymer, and found to be consistent with an exponential trap distribution of ca. 60 meV. Our study furthermore highlights the importance of high mobility charge transporting layers when designing perovskite solar cells.

  9. Electron Beam Evaporated TiO2 Layer for High Efficiency Planar Perovskite Solar Cells on Flexible Polyethylene Terephthalate Substrates

    KAUST Repository

    Qiu, Weiming; Paetzold, Ulrich W; Gehlhaar, Robert; Smirnov, Vladimir; Boyen, Hans-Gerd; Tait, Jeffrey Gerhart; Conings, Bert; Zhang, Weimin; Nielsen, Christian; McCulloch, Iain; Froyen, Ludo; Heremans, Paul; Cheyns, David

    2015-01-01

    The TiO2 layer made by electron beam (e-beam) induced evaporation is demonstrated as electron transport layer (ETL) in high efficiency planar junction perovskite solar cells. The temperature of the substrate and the thickness of the TiO2 layer can

  10. A double-layer based model of ion confinement in electron cyclotron resonance ion source

    Energy Technology Data Exchange (ETDEWEB)

    Mascali, D., E-mail: davidmascali@lns.infn.it; Neri, L.; Celona, L.; Castro, G.; Gammino, S.; Ciavola, G. [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali del Sud, via S. Sofia 62, 95123 Catania (Italy); Torrisi, G. [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali del Sud, via S. Sofia 62, 95123 Catania (Italy); Università Mediterranea di Reggio Calabria, Dipartimento di Ingegneria dell’Informazione, delle Infrastrutture e dell’Energia Sostenibile, Via Graziella, I-89100 Reggio Calabria (Italy); Sorbello, G. [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali del Sud, via S. Sofia 62, 95123 Catania (Italy); Università degli Studi di Catania, Dipartimento di Ingegneria Elettrica Elettronica ed Informatica, Viale Andrea Doria 6, 95125 Catania (Italy)

    2014-02-15

    The paper proposes a new model of ion confinement in ECRIS, which can be easily generalized to any magnetic configuration characterized by closed magnetic surfaces. Traditionally, ion confinement in B-min configurations is ascribed to a negative potential dip due to superhot electrons, adiabatically confined by the magneto-static field. However, kinetic simulations including RF heating affected by cavity modes structures indicate that high energy electrons populate just a thin slab overlapping the ECR layer, while their density drops down of more than one order of magnitude outside. Ions, instead, diffuse across the electron layer due to their high collisionality. This is the proper physical condition to establish a double-layer (DL) configuration which self-consistently originates a potential barrier; this “barrier” confines the ions inside the plasma core surrounded by the ECR surface. The paper will describe a simplified ion confinement model based on plasma density non-homogeneity and DL formation.

  11. Sputter Deposited TiOx Thin-Films as Electron Transport Layers in Organic Solar Cells

    DEFF Research Database (Denmark)

    Mirsafaei, Mina; Bomholt Jensen, Pia; Lakhotiya, Harish

    transparency and favorable energy-level alignment with many commonly used electron-acceptor materials. There are several methods available for fabricating compact TiOx thin-films for use in organic solar cells, including sol-gel solution processing, spray pyrolysis and atomic-layer deposition; however...... of around 7%, by incorporating sputter deposited TiOx thin-films as electron-transport and exciton-blocking layers. In the work, we report on the effect of different TiOx deposition temperatures and thicknesses on the organic-solar-cell device performance. Besides optical characterization, AFM and XRD...... analyses are performed to characterize the morphology and crystal structure of the films, and external quantum efficiency measurements are employed to shed further light on the device performance. Our study presents a novel method for implementation of TiOx thin-films as electron-transport layer in organic...

  12. Energy and angular distribution of electrons after transmission of thick layers

    International Nuclear Information System (INIS)

    Kreyling, H.

    1975-01-01

    In this work, the behaviour of electrons going through material-layers is studied. For a layer-thickness where the theories of multiple-scattering are no longer valid, a Monte-Carlo-method is presented for the calculation of energy distributions as a function of scattering-angle. Plastic-scintillator-material (NE 102 A produced by Nuclear Enterprises Ltd.) was bombarded by electrons with energies between 0.5 and 2.0 MeV and the energy-distributions of the electrons, scatterd in the layer, were measured as a function of the scattering-angle. With the aid of the Monte-Carlo-method developed in this paper, energy distributions were calculated as a function of scattering-angle for the two absorber materials aluminium (single-element material) and NE 102 A (chemical compound of C, N, H, O). (orig./WL) [de

  13. Stability, structural and electronic properties of benzene molecule adsorbed on free standing Au layer

    Energy Technology Data Exchange (ETDEWEB)

    Katoch, Neha, E-mail: nehakatoch2@gmail.com; Kapoor, Pooja; Sharma, Munish; Ahluwalia, P. K. [Physics Department, Himachal Pradesh University, Shimla, Himachal Pradesh, India 171005 (India); Kumar, Ashok [Center for Physical Sciences, School of Basic and Applied Sciences, Central University of Punjab, Bathinda, India, 151001 (India)

    2016-05-23

    We report stability and electronic properties of benzene molecule adsorbed on the Au atomic layer within the framework of density function theory (DFT). Horizontal configuration of benzene on the top site of Au monolayer prefers energetically over other studied configurations. On the adsorption of benzene, the ballistic conductance of Au monolayer is found to decrease from 4G{sub 0} to 2G{sub 0} suggesting its applications for the fabrications of organic sensor devices based on the Au atomic layers.

  14. Top layer's thickness dependence on total electron-yield X-ray standing-wave

    International Nuclear Information System (INIS)

    Ejima, Takeo; Yamazaki, Atsushi; Banse, Takanori; Hatano, Tadashi

    2005-01-01

    A Mo single-layer film with a stepwise thickness distribution was fabricated on the same Mo/Si reflection multilayer film. Total electron-yield X-ray standing-wave (TEY-XSW) spectra of the aperiodic multilayer were measured with reflection spectra. The peak positions of the standing waves in the TEY-XSW spectra changed as the film thickness of the top Mo-layer increased

  15. Diverse and tunable electronic structures of single-layer metal phosphorus trichalcogenides for photocatalytic water splitting

    International Nuclear Information System (INIS)

    Liu, Jian; Li, Xi-Bo; Wang, Da; Liu, Li-Min; Lau, Woon-Ming; Peng, Ping

    2014-01-01

    The family of bulk metal phosphorus trichalcogenides (APX 3 , A = M II , M 0.5 I M 0.5 III ; X = S, Se; M I , M II , and M III represent Group-I, Group-II, and Group-III metals, respectively) has attracted great attentions because such materials not only own magnetic and ferroelectric properties, but also exhibit excellent properties in hydrogen storage and lithium battery because of the layered structures. Many layered materials have been exfoliated into two-dimensional (2D) materials, and they show distinct electronic properties compared with their bulks. Here we present a systematical study of single-layer metal phosphorus trichalcogenides by density functional theory calculations. The results show that the single layer metal phosphorus trichalcogenides have very low formation energies, which indicates that the exfoliation of single layer APX 3 should not be difficult. The family of single layer metal phosphorus trichalcogenides exhibits a large range of band gaps from 1.77 to 3.94 eV, and the electronic structures are greatly affected by the metal or the chalcogenide atoms. The calculated band edges of metal phosphorus trichalcogenides further reveal that single-layer ZnPSe 3 , CdPSe 3 , Ag 0.5 Sc 0.5 PSe 3 , and Ag 0.5 In 0.5 PX 3 (X = S and Se) have both suitable band gaps for visible-light driving and sufficient over-potentials for water splitting. More fascinatingly, single-layer Ag 0.5 Sc 0.5 PSe 3 is a direct band gap semiconductor, and the calculated optical absorption further convinces that such materials own outstanding properties for light absorption. Such results demonstrate that the single layer metal phosphorus trichalcogenides own high stability, versatile electronic properties, and high optical absorption, thus such materials have great chances to be high efficient photocatalysts for water-splitting

  16. Signatures of collective electron dynamics in the angular distributions of electrons ejected during ultrashort laser pulse interactions with C+

    International Nuclear Information System (INIS)

    Lysaght, M A; Hutchinson, S; Van der Hart, H W

    2009-01-01

    We use the time-dependent R-matrix approach to investigate an ultrashort pump-probe scheme to observe collective electron dynamics in C + driven by the repulsion of two equivalent p electrons. By studying the two-dimensional momentum distributions of the ejected electron as a function of the time-delay between an ultrashort pump pulse and an ionizing ultrashort probe pulse it is possible to track the collective dynamics inside the C + ion in the time domain.

  17. Ion-acoustic double-layers in a magnetized plasma with nonthermal electrons

    Energy Technology Data Exchange (ETDEWEB)

    Rios, L. A. [Centro Brasileiro de Pesquisas Físicas and Instituto Nacional de Ciência e Tecnologia de Sistemas Complexos, Rua Xavier Sigaud 150, 22290-180 Rio de Janeiro (Brazil); Galvão, R. M. O. [Centro Brasileiro de Pesquisas Físicas and Instituto Nacional de Ciência e Tecnologia de Sistemas Complexos, Rua Xavier Sigaud 150, 22290-180 Rio de Janeiro (Brazil); Instituto de Física, Universidade de São Paulo, 05508-900 São Paulo (Brazil)

    2013-11-15

    In the present work we investigate the existence of obliquely propagating ion-acoustic double layers in magnetized two-electron plasmas. The fluid model is used to describe the ion dynamics, and the hot electron population is modeled via a κ distribution function, which has been proved to be appropriate for modeling non-Maxwellian plasmas. A quasineutral condition is assumed to investigate these nonlinear structures, which leads to the formation of double-layers propagating with slow ion-acoustic velocity. The problem is investigated numerically, and the influence of parameters such as nonthermality is discussed.

  18. Electronic structure and the properties of phosphorene and few-layer black phosphorus

    International Nuclear Information System (INIS)

    Fukuoka, Shuhei; Taen, Toshihiro; Osada, Toshihito

    2015-01-01

    A single atomic layer of black phosphorus, phosphorene, was experimentally realized in 2014. It has a puckered honeycomb lattice structure and a semiconducting electronic structure. In the first part of this paper, we use a simple LCAO model, and qualitatively discuss the electronic structure of phosphorene systems under electric and magnetic fields, especially noting their midgap edge states. The next part is devoted to the review of the progress in research on phosphorene over the past one year since its realization in 2014. Phosphorene has been a typical material to study the semiconductor physics in atomic layers. (author)

  19. Growth of ZnO layers for transparent and flexible electronics

    International Nuclear Information System (INIS)

    Mofor, A.C.; Bakin, A.S.; Postels, B.; Suleiman, M.; Elshaer, A.; Waag, A.

    2008-01-01

    We have deposited and characterised ZnO on flexible and transparent plastic polymer. We employed a specially designed vapour phase growth system with elemental sources for zinc and oxygen and deposited thin ZnO films at temperatures below 400 deg. C. Basic photoluminescence characterisation confirms ZnO. Ohmic contacts were fabricated on these layers and the layers exhibit significantly high electron concentration with carrier mobility μ of up to 10.78 cm 2 V -1 s -1 . Furthermore, we show how these layers can be processed with conventional device processing techniques

  20. Growth of ZnO layers for transparent and flexible electronics

    Energy Technology Data Exchange (ETDEWEB)

    Mofor, A.C.; Bakin, A.S.; Postels, B.; Suleiman, M.; Elshaer, A.; Waag, A. [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Str. 66, D-38106 Braunschweig (Germany)

    2008-02-15

    We have deposited and characterised ZnO on flexible and transparent plastic polymer. We employed a specially designed vapour phase growth system with elemental sources for zinc and oxygen and deposited thin ZnO films at temperatures below 400 deg. C. Basic photoluminescence characterisation confirms ZnO. Ohmic contacts were fabricated on these layers and the layers exhibit significantly high electron concentration with carrier mobility {mu} of up to 10.78 cm{sup 2} V{sup -1} s{sup -1}. Furthermore, we show how these layers can be processed with conventional device processing techniques.

  1. The effect of root surface conditioning on smear layer removal in periodontal regeneration (a scanning electron microscopic study)

    Science.gov (United States)

    Fidyawati, D.; Soeroso, Y.; Masulili, S. L. C.

    2017-08-01

    The role of root surface conditioning treatment on smear layer removal of human teeth is affected by periodontitis in periodontal regeneration. The objective of this study is to analyze the smear layer on root surface conditioned with 2.1% minocycline HCl ointment (Periocline), and 24% EDTA gel (Prefgel). A total of 10 human teeth indicated for extraction due to chronic periodontitis were collected and root planed. The teeth were sectioned in thirds of the cervical area, providing 30 samples that were divided into three groups - minocycline ointment treatment, 24% EDTA gel treatment, and saline as a control. The samples were examined by scanning electron microscope. No significant differences in levels of smear layer were observed between the minocycline group and the EDTA group (p=0.759). However, there were significant differences in the level of smear layer after root surface treatment in the minocycline and EDTA groups, compared with the control group (p=0.00). There was a relationship between root surface conditioning treatment and smear layer levels following root planing.

  2. Low Energy Scanned Electron-Beam Dose Distribution in Thin Layers

    DEFF Research Database (Denmark)

    McLaughlin, W. L.; Hjortenberg, P. E.; Pedersen, Walther Batsberg

    1975-01-01

    Thin radiochromic dye film dosimeters, calibrated by means of calorimetry, make possible the determination of absorbed-dose distributions due to low-energy scanned electron beam penetrations in moderately thin coatings and laminar media. For electrons of a few hundred keV, calibrated dosimeters...... of about 30–60 μm thickness may be used in stacks or interleaved between layers of materials of interest and supply a sufficient number of experimental data points throughout the depth of penetration of electrons to provide a depth-dose curve. Depth doses may be resolved in various polymer layers...... on different backings (wood, aluminum, and iron) for scanned electron beams (Emax = 400 keV) having a broad energy spectrum and diffuse incidence, such as those used in radiation curing of coatings, textiles, plastics, etc. Theoretical calculations of such distributions of energy depositions are relatively...

  3. The thermodynamic spin magnetization of strongly correlated 2d electrons in a silicon inversion layer

    OpenAIRE

    Prus, O.; Yaish, Y.; Reznikov, M.; Sivan, U.; Pudalov, V.

    2002-01-01

    A novel method invented to measure the minute thermodynamic spin magnetization of dilute two dimensional fermions is applied to electrons in a silicon inversion layer. Interplay between the ferromagnetic interaction and disorder enhances the low temperature susceptibility up to 7.5 folds compared with the Pauli susceptibility of non-interacting electrons. The magnetization peaks in the vicinity of the density where transition to strong localization takes place. At the same density, the suscep...

  4. Wide-gap layered oxychalcogenide semiconductors: Materials, electronic structures and optoelectronic properties

    International Nuclear Information System (INIS)

    Ueda, Kazushige; Hiramatsu, Hidenori; Hirano, Masahiro; Kamiya, Toshio; Hosono, Hideo

    2006-01-01

    Applying the concept of materials design for transparent conductive oxides to layered oxychalcogenides, several p-type and n-type layered oxychalcogenides were proposed as wide-gap semiconductors and their basic optical and electrical properties were examined. The layered oxychalcogenides are composed of ionic oxide layers and covalent chalcogenide layers, which bring wide-gap and conductive properties to these materials, respectively. The electronic structures of the materials were examined by normal/inverse photoemission spectroscopy and energy band calculations. The results of the examinations suggested that these materials possess unique features more than simple wide-gap semiconductors. Namely, the layered oxychalcogenides are considered to be extremely thin quantum wells composed of the oxide and chalcogenide layers or 2D chalcogenide crystals/molecules embedded in an oxide matrix. Observation of step-like absorption edges, large band gap energy and large exciton binding energy demonstrated these features originating from 2D density of states and quantum size effects in these layered materials

  5. Larval fish collected from sound-scattering layers in an offshore tropical area.

    Science.gov (United States)

    Castro, M S; Bonecker, A C T

    2017-12-01

    The composition of the larval fish assemblage in the sound-scattering layer of the continental shelf waters off the coast of south-eastern Brazil (12 and 22° S), a research project that is part of the Brazilian programme Avaliação do Potencial Sustentável de Recursos Vivos na Zona Econômica Exclusiva (REVIZEE), is described. Samples were collected during daylight hours and at dusk at five oceanographic stations in the winter of 1999 using an Isaacs-Kidd Midwater Trawl (IKMT). The oceanographic stations were chosen based on the detection of plankton layers by acoustic observation. A total of 2192 larval fish were identified, comprising 52 families and 62 species. Maurolicus stehmanni (Sternoptychidae) was the most abundant species found within the study area, comprising 18·5% of all identified larvae, followed by Psilotris celsus (Gobiidae) at 10·9%. © 2017 The Fisheries Society of the British Isles.

  6. Effect of low dose electron beam irradiation on the alteration layer formed during nuclear glass leaching

    Energy Technology Data Exchange (ETDEWEB)

    Mougnaud, S., E-mail: sarah.mougnaud@gmail.com [CEA Marcoule, DEN, DTCD, SECM, BP 17171, 30207 Bagnols-sur-Cèze cedex (France); Tribet, M. [CEA Marcoule, DEN, DTCD, SECM, BP 17171, 30207 Bagnols-sur-Cèze cedex (France); Renault, J.-P. [NIMBE, CNRS, CEA, Université Paris Saclay, CEA Saclay, 91191 Gif-sur-Yvette cedex (France); Jollivet, P. [CEA Marcoule, DEN, DTCD, SECM, BP 17171, 30207 Bagnols-sur-Cèze cedex (France); Panczer, G. [Institut Lumière Matière, UMR 5306, Université Lyon 1-CNRS, Université de Lyon, 69622 Villeurbanne cedex (France); Charpentier, T. [NIMBE, CNRS, CEA, Université Paris Saclay, CEA Saclay, 91191 Gif-sur-Yvette cedex (France); Jégou, C. [CEA Marcoule, DEN, DTCD, SECM, BP 17171, 30207 Bagnols-sur-Cèze cedex (France)

    2016-12-15

    This investigation concerns borosilicate glass leaching mechanisms and the evolution of alteration layer under electron beam irradiation. A simple glass doped with rare earth elements was selected in order to access mechanistic and structural information and better evaluate the effects of irradiation. It was fully leached in initially pure water at 90 °C and at high glass surface area to solution volume ratio (S/V = 20 000 m{sup −1}) in static conditions. Under these conditions, the system quickly reaches the residual alteration rate regime. A small particle size fraction (2–5 μm) was sampled in order to obtain a fairly homogeneous altered material enabling the use of bulk characterization methods. External irradiations with 10 MeV electrons up to a dose of 10 MGy were performed either before or after leaching, to investigate respectively the effect of initial glass irradiation on its alteration behavior and the irradiation stability of the alteration layer. Glass dissolution rate was analyzed by regular leachate samplings and the alteration layer structure was characterized by Raman, luminescence (continuous or time-resolved), and {sup 29}Si MAS NMR and EPR spectroscopy. It was shown that the small initial glass evolutions under irradiation did not induce any modification of the leaching kinetic nor of the structure of the alteration layer. The alteration process seemed to “smooth over” the created defects. Otherwise, the alteration layer and initial glass appeared to have different behaviors under irradiation. No Eu{sup 3+} reduction was detected in the alteration layer after irradiation and the defect creation efficiency was much lower than for initial glass. This can possibly be explained by the protective role of pore water contained in the altered material (∼20%). Moreover, a slight depolymerization of the silicon network of the altered glass under irradiation with electrons was evidenced, whereas in the initial glass it typically

  7. Electron-Ion Beam Coupling Through Collective Interactions

    National Research Council Canada - National Science Library

    Wheelock, Adrian; Cooke, David L; Gatsonis, Nikolaos A

    2006-01-01

    .... It is shown that Coulomb collisions, which can act to match velocities through strong ion-electron collisions between particles with low relative velocities, are far too slow to explain the phenomenon...

  8. Built-in potential shift and Schottky-barrier narrowing in organic solar cells with UV-sensitive electron transport layers.

    Science.gov (United States)

    Li, Cheng; Credgington, Dan; Ko, Doo-Hyun; Rong, Zhuxia; Wang, Jianpu; Greenham, Neil C

    2014-06-28

    The performance of organic solar cells incorporating solution-processed titanium suboxide (TiOx) as electron-collecting layers can be improved by UV illumination. We study the mechanism of this improvement using electrical measurements and electroabsorption spectroscopy. We propose a model in which UV illumination modifies the effective work function of the oxide layer through a significant increase in its free electron density. This leads to a dramatic improvement in device power conversion efficiency through several mechanisms - increasing the built-in potential by 0.3 V, increasing the conductivity of the TiOx layer and narrowing the interfacial Schottky barrier between the suboxide and the underlying transparent electrode. This work highlights the importance of considering Fermi-level equilibration when designing multi-layer transparent electrodes.

  9. Simulation of electronic circuit sensitivity towards humidity using electrochemical data on water layer

    DEFF Research Database (Denmark)

    Joshy, Salil; Verdingovas, Vadimas; Jellesen, Morten Stendahl

    2015-01-01

    Climatic conditions like temperature and humidity have direct influence on the operation of electronic circuits. The effects of temperature on the operation of electronic circuits have been widely investigated, while the effect of humidity and solder flux residues are not well understood including...... the effect on circuit and PCBA (printed circuit board assembly) layout design. This paper elucidates a methodology for analyzing the sensitivity of an electronic circuit based on parasitic circuit analysis using data on electrical property of the water layer formed under humid as well as contaminated...

  10. Fabrication of carbon layer coated FE-nanoparticles using an electron beam irradiation

    Science.gov (United States)

    Kim, Hyun Bin; Jeun, Joon Pyo; Kang, Phil Hyun; Oh, Seung-Hwan

    2016-01-01

    A novel synthesis of carbon encapsulated Fe nanoparticles was developed in this study. Fe chloride (III) and polyacrylonitrile (PAN) were used as precursors. The crosslinking of PAN molecules and the nucleation of Fe nanoparticles were controlled by the electron beam irradiation dose. Stabilization and carbonization processes were carried out using a vacuum furnace at 275 °C and 1000 °C, respectively. Micro structures were evaluated by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Fe nanoparticles were formed with diameters of 100 nm, and the Fe nanoparticles were encapsulated by carbon layers. As the electron beam irradiation dose increased, it was observed that the particle sizes decreased.

  11. Collection development in electronic environments: way forward for ...

    African Journals Online (AJOL)

    The paper examines the environment and ways in which information centers and libraries in Tanzania and other developing countries may be affected by undertaking collection development within the changing e-publishing dimension. Currently, the philosophy of collection development itself is changing to accommodate ...

  12. AA stacking, tribological and electronic properties of double-layer graphene with krypton spacer.

    Science.gov (United States)

    Popov, Andrey M; Lebedeva, Irina V; Knizhnik, Andrey A; Lozovik, Yurii E; Potapkin, Boris V; Poklonski, Nikolai A; Siahlo, Andrei I; Vyrko, Sergey A

    2013-10-21

    Structural, energetic, and tribological characteristics of double-layer graphene with commensurate and incommensurate krypton spacers of nearly monolayer coverage are studied within the van der Waals-corrected density functional theory. It is shown that when the spacer is in the commensurate phase, the graphene layers have the AA stacking. For this phase, the barriers to relative in-plane translational and rotational motion and the shear mode frequency of the graphene layers are calculated. For the incommensurate phase, both of the barriers are found to be negligibly small. A considerable change of tunneling conductance between the graphene layers separated by the commensurate krypton spacer at their relative subangstrom displacement is revealed by the use of the Bardeen method. The possibility of nanoelectromechanical systems based on the studied tribological and electronic properties of the considered heterostructures is discussed.

  13. Intrinsic electron traps in atomic-layer deposited HfO{sub 2} insulators

    Energy Technology Data Exchange (ETDEWEB)

    Cerbu, F.; Madia, O.; Afanas' ev, V. V.; Houssa, M.; Stesmans, A. [Laboratory of Semiconductor Physics, Department of Physics and Astronomy, University of Leuven, 3001 Leuven (Belgium); Andreev, D. V. [Laboratory of Semiconductor Physics, Department of Physics and Astronomy, University of Leuven, 3001 Leuven (Belgium); Bauman Moscow State Technical University—Kaluga Branch, 248000 Kaluga, Moscow obl. (Russian Federation); Fadida, S.; Eizenberg, M. [Department of Materials Science and Engineering, Technion-Israel Institute of Technology, 32000 Haifa (Israel); Breuil, L. [imec, 3001 Leuven (Belgium); Lisoni, J. G. [imec, 3001 Leuven (Belgium); Institute of Physics and Mathematics, Faculty of Science, Universidad Austral de Chile, Valdivia (Chile); Kittl, J. A. [Laboratory of Semiconductor Physics, Department of Physics and Astronomy, University of Leuven, 3001 Leuven (Belgium); Advanced Logic Lab, Samsung Semiconductor, Inc., Austin, 78754 Texas (United States); Strand, J.; Shluger, A. L. [Department of Physics and Astronomy, University College London, London WC1E 6BT (United Kingdom)

    2016-05-30

    Analysis of photodepopulation of electron traps in HfO{sub 2} films grown by atomic layer deposition is shown to provide the trap energy distribution across the entire oxide bandgap. The presence is revealed of two kinds of deep electron traps energetically distributed at around E{sub t} ≈ 2.0 eV and E{sub t} ≈ 3.0 eV below the oxide conduction band. Comparison of the trapped electron energy distributions in HfO{sub 2} layers prepared using different precursors or subjected to thermal treatment suggests that these centers are intrinsic in origin. However, the common assumption that these would implicate O vacancies cannot explain the charging behavior of HfO{sub 2}, suggesting that alternative defect models should be considered.

  14. Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics

    Science.gov (United States)

    Cheng, Rui; Jiang, Shan; Chen, Yu; Liu, Yuan; Weiss, Nathan; Cheng, Hung-Chieh; Wu, Hao; Huang, Yu; Duan, Xiangfeng

    2014-01-01

    Two-dimensional layered materials, such as molybdenum disulfide, are emerging as an exciting material system for future electronics due to their unique electronic properties and atomically thin geometry. Here we report a systematic investigation of MoS2 transistors with optimized contact and device geometry, to achieve self-aligned devices with performance including an intrinsic gain over 30, an intrinsic cut-off frequency fT up to 42 GHz and a maximum oscillation frequency fMAX up to 50 GHz, exceeding the reported values for MoS2 transistors to date (fT ~ 0.9 GHz, fMAX ~ 1 GHz). Our results show that logic inverters or radio frequency amplifiers can be formed by integrating multiple MoS2 transistors on quartz or flexible substrates with voltage gain in the gigahertz regime. This study demonstrates the potential of two-dimensional layered semiconductors for high-speed flexible electronics. PMID:25295573

  15. Scanning electron microscopy characterisation of carbon deposited layers in Tore Supra

    International Nuclear Information System (INIS)

    Delchambre, E.; Brosset, C.; Reichle, R.; Devynck, P.; Guirlet, R.; Tsitrone, E.; Saikali, W.; Dominici, C.; Charai, A.

    2003-01-01

    For long discharges in Tore-Supra, an infra-red safety system has been installed to survey surface temperature of the target plates located below the toroidal pump limiter. A shift in temperature is attributed to the growth of a carbon layer at the surface of the neutralizer and has been estimated to a temperature increase of 400 Celsius degrees between virgin and layered surfaces. For temperature safety analysis, target plates have been cleaned and carbon layers were sampled for scanning electronic microscopy (SEM) study. SEM micrographs have allowed to measure the deposited layer thickness and to study the specific fractal and stratified structure. Energy dispersive X-ray spectroscopy analysis has permitted to distinguish carbon layers corresponding to boronization and then to deduce an average growth rate of about 20 nm/s. The growth rate is not constant and is likely to depend on plasma operation parameters. These analyses completed by time of flight secondary ions mass spectrometry (ToF-SIMS) have shown a beneficial effect of the boronization on metallic contamination of the plasma, confirming the in situ optical spectroscopic measurements. These analyses have also shown an increase of hydrogen storage in carbon layer due to boronization. Although the measurements performed on deposited layer are very local, the results reflect the history of the 2002 campaign. (A.C.)

  16. Electronic fare collection options for commuter railroads : final report

    Science.gov (United States)

    2009-09-01

    This research is designed to support FTA in its efforts to disseminate knowledge of new technologies within the transit community, in this case focusing on issues associated with automated fare collection (AFC) for commuter rail. By identifying le...

  17. A layer-by-layer ZnO nanoparticle-PbS quantum dot self-assembly platform for ultrafast interfacial electron injection

    KAUST Repository

    Eita, Mohamed Samir; Usman, Anwar; El-Ballouli, AlA'A O.; Alarousu, Erkki Antero; Bakr, Osman; Mohammed, Omar F.

    2014-01-01

    solar cell. To achieve sufficient electron transfer and subsequently high conversion efficiency in these solar cells, however, energy-level alignment and interfacial contact between the donor and the acceptor units are needed. Here, the layer-by

  18. Dissolution of Monocrystalline Silicon Nanomembranes and Their Use as Encapsulation Layers and Electrical Interfaces in Water-Soluble Electronics.

    Science.gov (United States)

    Lee, Yoon Kyeung; Yu, Ki Jun; Song, Enming; Barati Farimani, Amir; Vitale, Flavia; Xie, Zhaoqian; Yoon, Younghee; Kim, Yerim; Richardson, Andrew; Luan, Haiwen; Wu, Yixin; Xie, Xu; Lucas, Timothy H; Crawford, Kaitlyn; Mei, Yongfeng; Feng, Xue; Huang, Yonggang; Litt, Brian; Aluru, Narayana R; Yin, Lan; Rogers, John A

    2017-12-26

    The chemistry that governs the dissolution of device-grade, monocrystalline silicon nanomembranes into benign end products by hydrolysis serves as the foundation for fully eco/biodegradable classes of high-performance electronics. This paper examines these processes in aqueous solutions with chemical compositions relevant to groundwater and biofluids. The results show that the presence of Si(OH) 4 and proteins in these solutions can slow the rates of dissolution and that ion-specific effects associated with Ca 2+ can significantly increase these rates. This information allows for effective use of silicon nanomembranes not only as active layers in eco/biodegradable electronics but also as water barriers capable of providing perfect encapsulation until their disappearance by dissolution. The time scales for this encapsulation can be controlled by introduction of dopants into the Si and by addition of oxide layers on the exposed surfaces.The former possibility also allows the doped silicon to serve as an electrical interface for measuring biopotentials, as demonstrated in fully bioresorbable platforms for in vivo neural recordings. This collection of findings is important for further engineering development of water-soluble classes of silicon electronics.

  19. 78 FR 10201 - Proposed Information Collection; Electronic Duck Stamp Program

    Science.gov (United States)

    2013-02-13

    ..., Interior. ACTION: Notice; request for comments. SUMMARY: We (U.S. Fish and Wildlife Service) will ask the... refuges where admission is charged. Duck Stamps and products that bear stamp images are also popular... fee the State will charge for issuance of an electronic stamp. Description of the process the State...

  20. Collective ion acceleration by relativistic electron beams in plasmas

    International Nuclear Information System (INIS)

    Galvez, M.; Gisler, G.

    1991-01-01

    A two-dimensional fully electromagnetic particle-in-cell code is used to simulate the interaction of a relativistic electron beam injected into a finite-size background neutral plasma. The simulations show that the background electrons are pushed away from the beam path, forming a neutralizing ion channel. Soon after the beam head leaves the plasma, a virtual cathode forms which travels away with the beam. However, at later times a second, quasi-stationary, virtual cathode forms. Its position and strength depends critically on the parameters of the system which critically determines the efficiency of the ion acceleration process. The background ions trapped in the electrostatic well of the virtual cathode are accelerated and at later times, the ions as well as the virtual cathode drift away from the plasma region. The surfing of the ions in the electrostatic well produces an ion population with energies several times the initial electron beam energy. It is found that optimum ion acceleration occurs when the beam-to-plasma density ratio is near unity. When the plasma is dense, the beam is a weak perturbation and accelerates few ions, while when the plasma is tenuous, the beam is not effectively neutralized, and a virtual cathode occurs right at the injection plane. The simulations also show that, at the virtual cathode position, the electron beam is pinched producing a self-focusing phenomena

  1. Observation of electron biteout regions below sporadic E layers at polar latitudes

    Directory of Open Access Journals (Sweden)

    G. A. Lehmacher

    2015-03-01

    Full Text Available The descent of a narrow sporadic E layer near 95 km altitude over Poker Flat Research Range in Alaska was observed with electron probes on two consecutive sounding rockets and with incoherent scatter radar during a 2 h period near magnetic midnight. A series of four trimethyl aluminum chemical releases demonstrated that the Es layer remained just slightly above the zonal wind node, which was slowly descending due to propagating long-period gravity waves. The location of the layer is consistent with the equilibrium position due to combined action of the wind shear and electric fields. Although the horizontal electric field could not be measured directly, we estimate that it was ~ 2 mV m−1 southward, consistent with modeling the vertical ion drift, and compatible with extremely quiet conditions. Both electron probes observed deep biteout regions just below the Es enhancements, which also descended with the sporadic layers. We discuss several possibilities for the cause of these depletions; one possibility is the presence of negatively charged, nanometer-sized mesospheric smoke particles. Such particles have recently been detected in the upper mesosphere, but not yet in immediate connection with sporadic E. Our observations of electron depletions suggest a new process associated with sporadic E.

  2. ZnO nanostructures as electron extraction layers for hybrid perovskite thin films

    Science.gov (United States)

    Nikolaidou, Katerina; Sarang, Som; Tung, Vincent; Lu, Jennifer; Ghosh, Sayantani

    Optimum interaction between light harvesting media and electron transport layers is critical for the efficient operation of photovoltaic devices. In this work, ZnO layers of different morphologies are implemented as electron extraction and transport layers for hybrid perovskite CH3NH3PbI3 thin films. These include nanowires, nanoparticles, and single crystalline film. Charge transfer at the ZnO/perovskite interface is investigated and compared through ultra-fast characterization techniques, including temperature and power dependent spectroscopy, and time-resolved photoluminescence. The nanowires cause an enhancement in perovskite emission, which may be attributed to increased scattering and grain boundary formation. However, the ZnO layers with decreasing surface roughness exhibit better electron extraction, as inferred from photoluminescence quenching, reduction in the number of bound excitons, and reduced exciton lifetime in CH3NH3PbI3 samples. This systematic study is expected to provide an understanding of the fundamental processes occurring at the ZnO-CH3NH3PbI3 interface and ultimately, provide guidelines for the ideal configuration of ZnO-based hybrid Perovskite devices. This research was supported by National Aeronautics and Space administration (NASA) Grant No: NNX15AQ01A.

  3. Theoretical investigation of electronic and magnetic properties of HoRh layers

    International Nuclear Information System (INIS)

    Masrour, R.; Hlil, E.K.; Hamedoun, M.; Benyoussef, A.; Mounkachi, O.; Bahmad, L.; El Moussaoui, H.

    2013-01-01

    Self-consistent ab initio calculations, based on Density Functional Theory (DFT) approach and using Full potential Linear Augmented Plane Wave (FLAPW) method, are performed to investigate both electronic and magnetic properties of the HoRh layers. Polarized spin and spin–orbit coupling are included in calculations within the framework of the antiferromagnetic state between two sites of Ho. Magnetic moment considered to lie along (001) axes are computed. The data obtained from the ab initio calculations are then used as input for the high temperature series expansions (HTSEs) calculations to compute other magnetic parameters. The exchange integrals between the magnetic atoms in the same sites are given by using mean field theory. The HTSEs of the magnetic susceptibility of HoRh layers spin-S through the Ising model for HoRh layers, are studied to tenth order series in β=1/k B T. The critical exponent γ associated with the magnetic susceptibility is deduced for two models. - Highlights: • Ab initio calculations is using to investigate both electronic and magnetic properties of the HoRh layers. • Obtained data from ab initio calculations are used as input for the HTSEs. • The Néel temperature is obtained for HoRh layers

  4. Theoretical investigation of electronic and magnetic properties of HoRh layers

    Energy Technology Data Exchange (ETDEWEB)

    Masrour, R., E-mail: rachidmasrour@hotmail.com [Laboratory of Materials, Processes, Environment and Quality, Cady Ayyed University, National School of Applied Sciences, Sidi Bouzid, Safi (Morocco); LMPHE (URAC 12), Faculty of Science, Mohammed V-Agdal University, Rabat (Morocco); Hlil, E.K. [Institut Néel, CNRS et Université Joseph Fourier, BP 166, F-38042 Grenoble cedex 9 (France); Hamedoun, M. [Institute of Nanomaterials and Nanotechnologies, MAScIR, Rabat (Morocco); Benyoussef, A. [LMPHE (URAC 12), Faculty of Science, Mohammed V-Agdal University, Rabat (Morocco); Institute of Nanomaterials and Nanotechnologies, MAScIR, Rabat (Morocco); Hassan II Academy of Science and Technology, Rabat (Morocco); Mounkachi, O. [Institute of Nanomaterials and Nanotechnologies, MAScIR, Rabat (Morocco); Bahmad, L. [LMPHE (URAC 12), Faculty of Science, Mohammed V-Agdal University, Rabat (Morocco); El Moussaoui, H. [Institute of Nanomaterials and Nanotechnologies, MAScIR, Rabat (Morocco)

    2013-10-15

    Self-consistent ab initio calculations, based on Density Functional Theory (DFT) approach and using Full potential Linear Augmented Plane Wave (FLAPW) method, are performed to investigate both electronic and magnetic properties of the HoRh layers. Polarized spin and spin–orbit coupling are included in calculations within the framework of the antiferromagnetic state between two sites of Ho. Magnetic moment considered to lie along (001) axes are computed. The data obtained from the ab initio calculations are then used as input for the high temperature series expansions (HTSEs) calculations to compute other magnetic parameters. The exchange integrals between the magnetic atoms in the same sites are given by using mean field theory. The HTSEs of the magnetic susceptibility of HoRh layers spin-S through the Ising model for HoRh layers, are studied to tenth order series in β=1/k{sub B}T. The critical exponent γ associated with the magnetic susceptibility is deduced for two models. - Highlights: • Ab initio calculations is using to investigate both electronic and magnetic properties of the HoRh layers. • Obtained data from ab initio calculations are used as input for the HTSEs. • The Néel temperature is obtained for HoRh layers.

  5. Electron Beam Mediated Simple Synthetic Route to Preparing Layered Zinc Hydroxide

    International Nuclear Information System (INIS)

    Bae, Hyo Sun; Jung, Hyun

    2012-01-01

    We have developed a novel and eco-friendly synthetic route for the preparation of a two-dimensional layered zinc hydroxide with intercalated nitrate anions. The layered zinc hydroxide nitrate, called 'zinc basic salt', was, in general, successfully synthesized, using an electron beam irradiation technique. The 2-propanol solutions containing hydrated zinc nitrate were directly irradiated with an electron-beam at room temperature, under atmospheric conditions, without stabilizers or base molecules. Under electron beam irradiation, the reactive OH· radicals were generated by radiolysis of water molecules in precursor metal salts. After further radiolytic processes, the hydroxyl anions might be formed by the reaction of solvated electrons and the OH· radical. Finally, the Zn 5 (OH) 8 (NO 3 ) 2 ·2H 2 O was precipitated by the reaction of zinc cation and hydroxyl anions. Structure and morphology of obtained compounds were characterized by powder X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and high resolution transmission electron microscopy (HR-TEM). The chemical components of the products were determined by Fourier transform infrared spectroscopy (FT-IR) and elemental analysis (EA). The thermal behavior of products was studied by thermogravimetric (TG) and differential thermal analysis (DTA)

  6. Semiconducting Polymer Photodetectors with Electron and Hole Blocking Layers: High Detectivity in the Near-Infrared

    Directory of Open Access Journals (Sweden)

    Xiong Gong

    2010-07-01

    Full Text Available Sensing from the ultraviolet-visible to the infrared is critical for a variety of industrial and scientific applications. Photodetectors with broad spectral response, from 300 nm to 1,100 nm, were fabricated using a narrow-band gap semiconducting polymer blended with a fullerene derivative. By using both an electron-blocking layer and a hole-blocking layer, the polymer photodetectors, operating at room temperature, exhibited calculated detectivities greater than 1013 cm Hz1/2/W over entire spectral range with linear dynamic range approximately 130 dB. The performance is comparable to or even better than Si photodetectors.

  7. The inversion layer of electric fields and electron phase-space-hole structure during two-dimensional collisionless magnetic reconnection

    International Nuclear Information System (INIS)

    Chen Lijen; Lefebvre, Bertrand; Torbert, Roy B.; Daughton, William S.

    2011-01-01

    Based on two-dimensional fully kinetic simulations that resolve the electron diffusion layer in undriven collisionless magnetic reconnection with zero guide field, this paper reports the existence and evolution of an inversion layer of bipolar electric fields, its corresponding phase-space structure (an electron-hole layer), and the implication to collisionless dissipation. The inversion electric field layer is embedded in the layer of bipolar Hall electric field and extends throughout the entire length of the electron diffusion layer. The electron phase-space hole structure spontaneously arises during the explosive growth phase when there exist significant inflows into the reconnection layer, and electrons perform meandering orbits across the layer while being cyclotron-turned toward the outflow directions. The cyclotron turning of meandering electrons by the magnetic field normal to the reconnection layer is shown to be a primary factor limiting the current density in the region where the reconnection electric field is balanced by the gradient (along the current sheet normal) of the off-diagonal electron pressure-tensor.

  8. Multifunctional Inverse Opal-Like TiO2 Electron Transport Layer for Efficient Hybrid Perovskite Solar Cells.

    Science.gov (United States)

    Chen, Xiao; Yang, Shuang; Zheng, Yi Chu; Chen, Ying; Hou, Yu; Yang, Xiao Hua; Yang, Hua Gui

    2015-09-01

    A novel multifunctional inverse opal-like TiO 2 electron transport layer (IOT-ETL) is designed to replace the traditional compact layer and mesoporous scaffold layer in perovskite solar cells (PSCs). Improved light harvesting efficiency and charge transporting performance in IOT-ETL based PSCs yield high power conversion efficiency of 13.11%.

  9. Electron Production and Collective Field Generation in Intense Particle Beams

    International Nuclear Information System (INIS)

    Molvik, A W; Vay, J; Cohen, R; Friedman, A; Lee, E; Verboncoeur, J; Covo, M K

    2006-01-01

    Electron cloud effects (ECEs) are increasingly recognized as important, but incompletely understood, dynamical phenomena, which can severely limit the performance of present electron colliders, the next generation of high-intensity rings, such as PEP-II upgrade, LHC, and the SNS, the SIS 100/200, or future high-intensity heavy ion accelerators such as envisioned in Heavy Ion Inertial Fusion (HIF). Deleterious effects include ion-electron instabilities, emittance growth, particle loss, increase in vacuum pressure, added heat load at the vacuum chamber walls, and interference with certain beam diagnostics. Extrapolation of present experience to significantly higher beam intensities is uncertain given the present level of understanding. With coordinated LDRD projects at LLNL and LBNL, we undertook a comprehensive R and D program including experiments, theory and simulations to better understand the phenomena, establish the essential parameters, and develop mitigating mechanisms. This LDRD project laid the essential groundwork for such a program. We developed insights into the essential processes, modeled the relevant physics, and implemented these models in computational production tools that can be used for self-consistent study of the effect on ion beams. We validated the models and tools through comparison with experimental data, including data from new diagnostics that we developed as part of this work and validated on the High-Current Experiment (HCX) at LBNL. We applied these models to High-Energy Physics (HEP) and other advanced accelerators. This project was highly successful, as evidenced by the two paragraphs above, and six paragraphs following that are taken from our 2003 proposal with minor editing that mostly consisted of changing the tense. Further benchmarks of outstanding performance are: we had 13 publications with 8 of them in refereed journals, our work was recognized by the accelerator and plasma physics communities by 8 invited papers and we have

  10. A Strategy to Enhance the Efficiency of Quantum Dot-Sensitized Solar Cells by Decreasing Electron Recombination with Polyoxometalate/TiO2 as the Electronic Interface Layer.

    Science.gov (United States)

    Chen, Li; Chen, Weilin; Li, Jianping; Wang, Jiabo; Wang, Enbo

    2017-07-21

    Electron recombination occurring at the TiO 2 /quantum dot sensitizer/electrolyte interface is the key reason for hindering further efficiency improvements to quantum dot sensitized solar cells (QDSCs). Polyoxometalate (POM) can act as an electron-transfer medium to decrease electron recombination in a photoelectric device owing to its excellent oxidation/reduction properties and thermostability. A POM/TiO 2 electronic interface layer prepared by a simple layer-by-layer self-assembly method was added between fluorine-doped tin oxide (FTO) and mesoporous TiO 2 in the photoanode of QDSCs, and the effect on the photovoltaic performance was systematically investigated. Photovoltaic experimental results and the electron transmission mechanism show that the POM/TiO 2 electronic interface layer in the QDSCs can clearly suppress electron recombination, increase the electron lifetime, and result in smoother electron transmission. In summary, the best conversion efficiency of QDSCs with POM/TiO 2 electronic interface layers increases to 8.02 %, which is an improvement of 25.1 % compared with QDSCs without POM/TiO 2 . This work first builds an electron-transfer bridge between FTO and the quantum dot sensitizer and paves the way for further improved efficiency of QDSCs. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Characteristic electron energy loss spectra in SiC buried layers formed by C+ implantation into crystalline silicon

    International Nuclear Information System (INIS)

    Yan Hui; Chen Guanghua; Kwok, R.W.M.

    1998-01-01

    SiC buried layers were synthesized by a metal vapor vacuum arc ion source, with C + ions implanted into crystalline Si substrates. According to X-ray photoelectron spectroscopy, the characteristic electron energy loss spectra of the SiC buried layers were studied. It was found that the characteristic electron energy loss spectra depend on the profiles of the carbon content, and correlate well with the order of the buried layers

  12. Electron microscopy analyses and electrical properties of the layered Bi2WO6 phase

    International Nuclear Information System (INIS)

    Taoufyq, A.; Ait Ahsaine, H.; Patout, L.; Benlhachemi, A.; Ezahri, M.

    2013-01-01

    The bismuth tungstate Bi 2 WO 6 was synthesized using a classical coprecipitation method followed by a calcination process at different temperatures. The samples were characterized by X-ray diffraction, simultaneous thermogravimetry and differential thermal analysis (TGA/DTA), scanning and transmission electron microscopy (SEM, TEM) analyses. The Rietveld analysis and electron diffraction clearly confirmed the Pca2 1 non centrosymmetric space group previously proposed for this phase. The layers Bi 2 O 2 2+ and WO 4 2− have been directly evidenced from the HRTEM images. The electrical properties of Bi 2 WO 6 compacted pellets systems were determined from electrical impedance spectrometry (EIS) and direct current (DC) analyses, under air and argon, between 350 and 700 °C. The direct current analyses showed that the conduction observed from EIS analyses was mainly ionic in this temperature range, with a small electronic contribution. Electrical change above the transition temperature of 660 °C is observed under air and argon atmospheres. The strong conductivity increase observed under argon is interpreted in terms of formation of additional oxygen vacancies coupled with electron conduction. - Graphical abstract: High resolution transmission electron microscopy: inverse fast Fourier transform giving the layered structure of the Bi 2 WO 6 phase, with a representation of the cell dimensions (b and c vectors). The Bi 2 O 2 2+ and WO 4 2− sandwiches are visible in the IFFT image. - Highlights: • Using transmission electron microscopy, we visualize the layered structure of Bi 2 WO 6 . • Electrical analyses under argon gas show some increase in conductivity. • The phase transition at 660 °C is evidenced from electrical modification

  13. Effects of buried high-Z layers on fast electron propagation

    International Nuclear Information System (INIS)

    Yang, Xiaohu; Zhuo, Hongbin; Ma, Yanyun; Shao, Fuqiu; Xu, Han; Yin Yan; Borghesi, M.

    2014-01-01

    The transport through high density plasmas of relativistic electron beams generated by ultra-intense laser-plasma interaction has potential applications in laser-driven ion acceleration and in the fast igniter scheme for inertial confinement fusion. By extending a prior model [A.R. Bell, J.R. Davies, S.M. Guerin, Phys. Rev. E 58, 2471 (1998)], the magnetic field generated during the transport of a fast electron beam driven by an ultra-intense laser in a solid target is derived analytically and applied to estimate the effect of such field on fast electron propagation through a buried high-Z layer in a lower-Z target. It is found that the effect gets weaker with the increase of the depth of the buried layer, the divergence of the fast electrons, and the laser intensity, indicating that magnetic field effects on the fast electron divergence as measured from K a X-ray emission may need to be considered for moderate laser intensities. On the basis of the calculations, some considerations are made on how one can mitigate the effect of the magnetic field generated at the interface. (authors)

  14. Electron-Hole Asymmetry of Spin Injection and Transport in Single-Layer Graphene

    OpenAIRE

    Han, Wei; Wang, W. H.; Pi, K.; McCreary, K. M.; Bao, W.; Li, Yan; Miao, F.; Lau, C. N.; Kawakami, R. K.

    2009-01-01

    Spin-dependent properties of single-layer graphene (SLG) have been studied by non-local spin valve measurements at room temperature. Gate voltage dependence shows that the non-local magnetoresistance (MR) is proportional to the conductivity of the SLG, which is the predicted behavior for transparent ferromagnetic/nonmagnetic contacts. While the electron and hole bands in SLG are symmetric, gate voltage and bias dependence of the non-local MR reveal an electron-hole asymmetry in which the non-...

  15. Ion-acoustic supersolitons and double layers in plasmas with nonthermal electrons

    Science.gov (United States)

    Gao, D.-N.; Zhang, J.; Yang, Y.; Duan, W.-S.

    2017-08-01

    Supersoliton (SS) can be mainly featured in two ways, namely, by focusing on subsidiary maxima on its electric field or by meeting the requirement that the appropriate Sagdeev pseudopotential (SP) has three local extrema between the equilibrium conditions and its amplitude. In this paper, by using the SP method, double layers and ion-acoustic SSs are studied in a plasma with Maxwellian cold electrons, nonthermal hot electrons, and fluid ions. The existence of the SS regime in parameter space is obtained in a methodical fashion. The existence domains for positive solitary waves are also presented. It is found that there is no SSs at the acoustic speed.

  16. Auger electron spectroscopy study on interaction between aluminum thin layers and uranium substrate

    International Nuclear Information System (INIS)

    Zhou Wei; Liu Kezhao; Yang Jiangrong; Xiao Hong; Jiang Chunli; Lu Lei

    2005-01-01

    Aluminum thin layers on uranium were prepared by sputter deposition at room temperature in ultra high vacuum analysis chamber. Interaction between U and Al, and growth mode were investigated by Auger electron spectroscopy (AES) and electron energy loss spectroscopy (EELS). It is shown that Al thin film growth follows the volmer-weber (VW) mode. At room temperature, Al and U interact with each other, resulting in interdiffusion action and formation of U-Al alloys at U/Al interface. Annealing promotes interaction and interdiffusion between U and Al, and UAl x maybe formed at interface. (authors)

  17. Detector and Front-end electronics for ALICE and STAR silicon strip layers

    CERN Document Server

    Arnold, L; Coffin, J P; Guillaume, G; Higueret, S; Jundt, F; Kühn, C E; Lutz, Jean Robert; Suire, C; Tarchini, A; Berst, D; Blondé, J P; Clauss, G; Colledani, C; Deptuch, G; Dulinski, W; Hu, Y; Hébrard, L; Kucewicz, W; Boucham, A; Bouvier, S; Ravel, O; Retière, F

    1998-01-01

    Detector modules consisting of Silicon Strip Detector (SSD) and Front End Electronics (FEE) assembly have been designed in order to provide the two outer layers of the ALICE Inner Tracker System (ITS) [1] as well as the outer layer of the STAR Silicon Vertex Tracker (SVT) [2]. Several prototypes have beenproduced and tested in the SPS and PS beam at CERN to validate the final design. Double-sided, AC-coupled SSD detectors provided by two different manufacturers and also a pair of single-sided SSD have been asssociated to new low-power CMOS ALICE128C ASIC chips in a new detector module assembly. The same detectors have also been associated to current Viking electronics for reference purpose. These prototype detector modules are described and some first results are presented.

  18. Lifetime enhanced phosphorescent organic light emitting diode using an electron scavenger layer

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Seokhwan; Kim, Ji Whan; Lee, Sangyeob, E-mail: sy96.lee@samsung.com [Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, Gyeonggi 443-803 (Korea, Republic of)

    2015-07-27

    We demonstrate a method to improve lifetime of a phosphorescent organic light emitting diode (OLED) using an electron scavenger layer (ESL) in a hole transporting layer (HTL) of the device. We use a bis(1-(phenyl)isoquinoline)iridium(III)acetylacetonate [Ir(piq){sub 2}(acac)] doped HTL to stimulate radiative decay, preventing thermal degradation in HTL. The ESL effectively prevented non-radiative decay of leakage electron in HTL by converting non-radiative decay to radiative decay via a phosphorescent red emitter, Ir(piq){sub 2}(acac). The lifetime of device (t{sub 95}: time after 5% decrease of luminance) has been increased from 75 h to 120 h by using the ESL in a phosphorescent green-emitting OLED.

  19. Novel Electronic and Magnetic Properties of Graphene Nanoflakes in a Boron Nitride Layer

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Yungang; Wang, Zhiguo; Yang, Ping; Gao, Fei

    2012-04-05

    Novel electronic and magnetic properties of various-sized graphene nanoflakes (GNFs) embedded in a boron nitride (BN) layer are studied using ab initio methods. The feasibility of synthesizing hybrid GNF-BN structure, a desirable quantum dot structure, is explored. In this structure, photoexcited electrons and holes occupy the same spatial region - the GNF region - which offers an effective way to generate a GNF-based light-emitting device and adjust its emitted optical properties by controlling the size and array of GNF in the BN layer. Based on the important magnetism properties of embedded GNF, we propose a specific configuration to obtain a large spin. Together with the high stability of spin alignment, the proposed configuration can be exploited for spintronic devices.

  20. High-rate deposition of SI absorber layers by electron beam evaporation and first electron beam crystallization tests

    OpenAIRE

    Saager, Stefan; Ben Yaala, Marwa; Heinß, Jens-Peter; Temmler, Dietmar; Pfefferling, Bert; Metzner, Christoph

    2014-01-01

    In earlier electron beam physical vapor deposition tests (EB-PVD), using a conventional copper crucible (A), high Si deposition rates at relatively high EB power together with a contamination level of 1016 cm-3 are demonstrated. To improve the rate vs. EB power relation as well as the Si layer purity, two alternative high rate EBPVD methods are investigated and reported here - a contact-less crucible setup (B) and a crucible-free setup (C).In these experiments comparable deposition rates of ~...

  1. Planar heterojunction perovskite solar cell based on CdS electron transport layer

    KAUST Repository

    Abulikemu, Mutalifu

    2017-07-02

    We report on planar heterojunction perovskite solar cells employing a metal chalcogenide (CdS) electron transport layer with power conversion efficiency up to 10.8%. The CdS layer was deposited via solution-process chemical bath deposition at low-temperature (60°C). Pinhole-free and uniform thin films were obtained with good structural, optical and morphological properties. An optimal layer thickness of 60nm yielded an improved open-circuit voltage and fill factor compared to the standard TiO2-based solar cells. Devices showed a higher reproducibility of the results compared to TiO2-based ones. We also tested the effect of annealing temperature on the CdS film and the effect of CdCl2 treatment followed by high temperature annealing (410°C) that is expected to passivate the surface, thus eliminating eventual trap-states inducing recombination.

  2. Nanoparticle mediated electron transfer across organic layers: from current understanding to applications

    Energy Technology Data Exchange (ETDEWEB)

    Gooding, J. Justin; Alam, Muhammad Tanzirul; Barfidokht, Abbas; Carter, Lachlan, E-mail: justin.gooding@unsw.edu.au [School of Chemistry and Australian Centre for NanoMedicine, The University of New South Wales, Sydney (Australia)

    2014-03-15

    In the last few years electrode-organic layer-nanoparticle constructs have attracted considerable research interest for systems where in the absence of the nanoparticles the electrode is passivated. This is because it has been observed that if the organic layer is a good self-assembled monolayer that passivates the electrode, the presence of the nanoparticles 'switches on' faradaic electrochemistry and because electron transfer between the electrode and the nanoparticles is apparently independent of the thickness of the organic layer. This review 1) outlines the full extent of the experimental observations regarding this phenomenon, 2) discusses a recent theoretical description to explain the observations that have just been supported with experimental evidences and 3) provides an overview of the application of these systems in sensing and photovoltaic. (author)

  3. Planar heterojunction perovskite solar cell based on CdS electron transport layer

    KAUST Repository

    Abulikemu, Mutalifu; Barbe, Jeremy; El Labban, Abdulrahman; Eid, Jessica; Del Gobbo, Silvano

    2017-01-01

    We report on planar heterojunction perovskite solar cells employing a metal chalcogenide (CdS) electron transport layer with power conversion efficiency up to 10.8%. The CdS layer was deposited via solution-process chemical bath deposition at low-temperature (60°C). Pinhole-free and uniform thin films were obtained with good structural, optical and morphological properties. An optimal layer thickness of 60nm yielded an improved open-circuit voltage and fill factor compared to the standard TiO2-based solar cells. Devices showed a higher reproducibility of the results compared to TiO2-based ones. We also tested the effect of annealing temperature on the CdS film and the effect of CdCl2 treatment followed by high temperature annealing (410°C) that is expected to passivate the surface, thus eliminating eventual trap-states inducing recombination.

  4. Low frequency solitons and double layers in a magnetized plasma with two temperature electrons

    Energy Technology Data Exchange (ETDEWEB)

    Rufai, O. R. [Department of Physics, University of the Western Cape, Private Bag X17, Bellville 7535 (South Africa); Bharuthram, R. [Office of the Deputy Vice Chancellor (Academic), University of the Western Cape, Bellville (South Africa); Singh, S. V. [Indian Institute of Geomagnetism, New Panvel (W), Navi Mumbai-410218 (India); School of Chemistry and Physics, University of Kwa-Zulu Natal, Durban (South Africa); Lakhina, G. S. [Indian Institute of Geomagnetism, New Panvel (W), Navi Mumbai-410218 (India)

    2012-12-15

    Finite amplitude non-linear ion-acoustic solitary waves and double layers are studied in a magnetized plasma with cold ions fluid and two distinct groups of Boltzmann electrons, using the Sagdeev pseudo-potential technique. The conditions under which the solitary waves and double layers can exist are found both analytically and numerically. We have shown the existence of negative potential solitary waves and double layers for subsonic Mach numbers, whereas in the unmagnetized plasma they can only in the supersonic Mach number regime. For the plasma parameters in the auroral region, the electric field amplitude of the solitary structures comes out to be 49 mV/m which is in agreement of the Viking observations in this region.

  5. Low frequency solitons and double layers in a magnetized plasma with two temperature electrons

    International Nuclear Information System (INIS)

    Rufai, O. R.; Bharuthram, R.; Singh, S. V.; Lakhina, G. S.

    2012-01-01

    Finite amplitude non-linear ion-acoustic solitary waves and double layers are studied in a magnetized plasma with cold ions fluid and two distinct groups of Boltzmann electrons, using the Sagdeev pseudo-potential technique. The conditions under which the solitary waves and double layers can exist are found both analytically and numerically. We have shown the existence of negative potential solitary waves and double layers for subsonic Mach numbers, whereas in the unmagnetized plasma they can only in the supersonic Mach number regime. For the plasma parameters in the auroral region, the electric field amplitude of the solitary structures comes out to be 49 mV/m which is in agreement of the Viking observations in this region.

  6. Phonon and electron temperature and non-Fourier heat transport in thin layers

    Energy Technology Data Exchange (ETDEWEB)

    Carlomagno, I.; Cimmelli, V.A. [Department of Mathematics, Computer Science and Economics, University of Basilicata, Campus Macchia Romana, Viale dell' Ateneo Lucano 10, 85100 Potenza (Italy); Sellitto, A. [Department of Industrial Engineering, University of Salerno, Via Giovanni Paolo II, 132, 84084 Fisciano (Italy)

    2017-04-15

    We present a thermodynamic model of heat conductor which allows for different temperatures of phonons and electrons. This model is applied to calculate the steady-state radial temperature profile in a circular thin layer. The compatibility of the obtained temperature profiles with the second law of thermodynamics is investigated in view of the requirement of positive entropy production and of a nonlocal constitutive equation for the entropy flux.

  7. Enhanced electron-lattice coupling under uniaxial stress in layered double hydroxides intercalated with samarium complexes

    International Nuclear Information System (INIS)

    Park, Ta-Ryeong

    2004-01-01

    We have applied uniaxial stress to samarium complexes by intercalating them into the gallery of a layered material and by using a diamond-anvil cell at 28 K. Although uniaxial stress reduces symmetry and removes degeneracy, the overall number of photoluminescence (PL) peaks evidently decreased with the application of uniaxial stress. This contradictory observation is explained by an increased electron-lattice coupling strength under uniaxial stress. This behavior is also confirmed by time-resolved PL data.

  8. Layered-metal-hydroxide nanosheet arrays with controlled nanostructures to assist direct electronic communication at biointerfaces.

    Science.gov (United States)

    An, Zhe; Lu, Shan; Zhao, Liwei; He, Jing

    2011-10-18

    In this work, ordered vertical arrays of layered double hydroxide (LDH) nanosheets have been developed to achieve electron transfer (eT) at biointerfaces in electrochemical devices. It is found that tailoring the gap size of LDH nanosheet arrays could significantly promote the eT rate. This research has successfully extended nanomaterials for efficient modifications of electrode surfaces from nanoparticles, nanowires, nanorods, and nanotubes to nanosheets. © 2011 American Chemical Society

  9. Thermal modeling of multi-shape heating sources on n-layer electronic board

    Directory of Open Access Journals (Sweden)

    Monier-Vinard Eric

    2017-01-01

    Full Text Available The present work completes the toolbox of analytical solutions that deal with resolving steady-state temperatures of a multi-layered structure heated by one or many heat sources. The problematic of heating sources having non-rectangular shapes is addressed to enlarge the capability of analytical approaches. Moreover, various heating sources could be located on the external surfaces of the sandwiched layers as well as embedded at interface of its constitutive layers. To demonstrate its relevance, the updated analytical solution has been compared with numerical simulations on the case of a multi-layered electronic board submitted to a set of heating source configurations. The comparison shows a high agreement between analytical and numerical calculations to predict the centroid and average temperatures. The promoted analytical approach establishes a kit of practical expressions, easy to implement, which would be cumulated, using superposition principle, to help electronic designers to early detect component or board temperatures beyond manufacturer limit. The ability to eliminate bad concept candidates with a minimum of set-up, relevant assumptions and low computation time can be easily achieved.

  10. Theoretical investigation of electronic and magnetic properties of MnAu layers

    Energy Technology Data Exchange (ETDEWEB)

    Masrour, R., E-mail: rachidmasrour@hotmail.com [Laboratory of Materials, Processes, Environment and Quality, Cady Ayyed University, National School of Applied Sciences, BP 63, 46000, Sidi Bouzid, Safi (Morocco); LMPHE (URAC 12), Faculty of Science, Mohammed V-Agdal University, Rabat (Morocco); Hlil, E.K. [Institut Neel, CNRS et Universite Joseph Fourier, BP 166, F-38042 Grenoble cedex 9 (France); Hamedoun, M. [Institute of Nanomaterials and Nanotechnologies, MAScIR, Rabat (Morocco); Benyoussef, A. [LMPHE (URAC 12), Faculty of Science, Mohammed V-Agdal University, Rabat (Morocco); Institute of Nanomaterials and Nanotechnologies, MAScIR, Rabat (Morocco); Hassan II Academy of Science and Technology, Rabat (Morocco); Mounkachi, O. [Institute of Nanomaterials and Nanotechnologies, MAScIR, Rabat (Morocco); Bahmad, L. [LMPHE (URAC 12), Faculty of Science, Mohammed V-Agdal University, Rabat (Morocco)

    2013-01-15

    Self-consistent ab initio calculations, based on the density functional theory (DFT) approach and using the full potential linear augmented plane wave (FLAPW) method, are performed to investigate both electronic and magnetic properties of the MnAu layers. Polarized spin and spin-orbit coupling are included in calculations within the framework of the antiferromagnetic state between two adjacent Mn layers. Magnetic moment considered to lie along a axes are computed. The data obtained from the ab initio calculations are then used as input for the high temperature series expansions (HTSEs) calculation to compute other magnetic parameters. The exchange integrals between the magnetic atoms in the same layer and between the magnetic atoms in the bilayers adjacent are given by using mean field theory. The HTSEs of the magnetic susceptibility of MnAu antiferromagnetic spin-S through two model: Ising and XY layers consisting of l=2, 3, 4, 5, 6 and bulk ({infinity}) interacting layers, are studied to sixth order series in {beta}=1/k{sub B}T obtained for free-surface boundary conditions. The effects of finite size on critical-point behavior are studied by extrapolation of the high-temperature series. The Neel temperature T{sub N}(l) as a function of the number of l spin layers is obtained by HTSEs of the magnetic susceptibility series by using the Pade approximant method and by MFT theory. The critical exponent {gamma} associated with the magnetic susceptibility is deduced. T{sub N}(l) for the l-layers are estimated from the divergence of the staggered susceptibility with an exponent for Ising model of {gamma}(1)=2.96, and for XY model of {gamma}(2)=2.82, which is consistent with the basic assumptions of scaling laws. Our estimates for the shift exponent of the Neel temperature for the two models are obtained. - Highlights: Black-Right-Pointing-Pointer ab initio calculations is using to investigate both electronic and magnetic properties of the MnAu layers. Black

  11. Theoretical investigation of electronic and magnetic properties of MnAu layers

    International Nuclear Information System (INIS)

    Masrour, R.; Hlil, E.K.; Hamedoun, M.; Benyoussef, A.; Mounkachi, O.; Bahmad, L.

    2013-01-01

    Self-consistent ab initio calculations, based on the density functional theory (DFT) approach and using the full potential linear augmented plane wave (FLAPW) method, are performed to investigate both electronic and magnetic properties of the MnAu layers. Polarized spin and spin–orbit coupling are included in calculations within the framework of the antiferromagnetic state between two adjacent Mn layers. Magnetic moment considered to lie along a axes are computed. The data obtained from the ab initio calculations are then used as input for the high temperature series expansions (HTSEs) calculation to compute other magnetic parameters. The exchange integrals between the magnetic atoms in the same layer and between the magnetic atoms in the bilayers adjacent are given by using mean field theory. The HTSEs of the magnetic susceptibility of MnAu antiferromagnetic spin-S through two model: Ising and XY layers consisting of l=2, 3, 4, 5, 6 and bulk (∞) interacting layers, are studied to sixth order series in β=1/k B T obtained for free-surface boundary conditions. The effects of finite size on critical-point behavior are studied by extrapolation of the high-temperature series. The Néel temperature T N (l) as a function of the number of l spin layers is obtained by HTSEs of the magnetic susceptibility series by using the Padé approximant method and by MFT theory. The critical exponent γ associated with the magnetic susceptibility is deduced. T N (l) for the l-layers are estimated from the divergence of the staggered susceptibility with an exponent for Ising model of γ(1)=2.96, and for XY model of γ(2)=2.82, which is consistent with the basic assumptions of scaling laws. Our estimates for the shift exponent of the Néel temperature for the two models are obtained. - Highlights: ► ab initio calculations is using to investigate both electronic and magnetic properties of the MnAu layers. ► Obtained data from ab initio calculations are used as input for the HTSEs

  12. Layer-dependent anisotropic electronic structure of freestanding quasi-two-dimensional Mo S 2

    KAUST Repository

    Hong, Jinhua; Li, Kun; Jin, Chuanhong; Zhang, Xixiang; Zhang, Ze; Yuan, Jun

    2016-01-01

    The anisotropy of the electronic transition is a well-known characteristic of low-dimensional transition-metal dichalcogenides, but their layer-thickness dependence has not been properly investigated experimentally until now. Yet, it not only determines the optical properties of these low-dimensional materials, but also holds the key in revealing the underlying character of the electronic states involved. Here we used both angle-resolved electron energy-loss spectroscopy and spectral analysis of angle-integrated spectra to study the evolution of the anisotropic electronic transition involving the low-energy valence electrons in the freestanding MoS2 layers with different thicknesses. We are able to demonstrate that the well-known direct gap at 1.8 eV is only excited by the in-plane polarized field while the out-of-plane polarized optical gap is 2.4 ± 0.2 eV in monolayer MoS2. This contrasts with the much smaller anisotropic response found for the indirect gap in the few-layer MoS2 systems. In addition, we determined that the joint density of states associated with the indirect gap transition in the multilayer systems and the corresponding indirect transition in the monolayer case has a characteristic three-dimensional-like character. We attribute this to the soft-edge behavior of the confining potential and it is an important factor when considering the dynamical screening of the electric field at the relevant excitation energies. Our result provides a logical explanation for the large sensitivity of the indirect transition to thickness variation compared with that for the direct transition, in terms of quantum confinement effect.

  13. Layer-dependent anisotropic electronic structure of freestanding quasi-two-dimensional Mo S 2

    KAUST Repository

    Hong, Jinhua

    2016-02-29

    The anisotropy of the electronic transition is a well-known characteristic of low-dimensional transition-metal dichalcogenides, but their layer-thickness dependence has not been properly investigated experimentally until now. Yet, it not only determines the optical properties of these low-dimensional materials, but also holds the key in revealing the underlying character of the electronic states involved. Here we used both angle-resolved electron energy-loss spectroscopy and spectral analysis of angle-integrated spectra to study the evolution of the anisotropic electronic transition involving the low-energy valence electrons in the freestanding MoS2 layers with different thicknesses. We are able to demonstrate that the well-known direct gap at 1.8 eV is only excited by the in-plane polarized field while the out-of-plane polarized optical gap is 2.4 ± 0.2 eV in monolayer MoS2. This contrasts with the much smaller anisotropic response found for the indirect gap in the few-layer MoS2 systems. In addition, we determined that the joint density of states associated with the indirect gap transition in the multilayer systems and the corresponding indirect transition in the monolayer case has a characteristic three-dimensional-like character. We attribute this to the soft-edge behavior of the confining potential and it is an important factor when considering the dynamical screening of the electric field at the relevant excitation energies. Our result provides a logical explanation for the large sensitivity of the indirect transition to thickness variation compared with that for the direct transition, in terms of quantum confinement effect.

  14. Silicon-ion-implanted PMMA with nanostructured ultrathin layers for plastic electronics

    Science.gov (United States)

    Hadjichristov, G. B.; Ivanov, Tz E.; Marinov, Y. G.

    2014-12-01

    Being of interest for plastic electronics, ion-beam produced nanostructure, namely silicon ion (Si+) implanted polymethyl-methacrylate (PMMA) with ultrathin nanostructured dielectric (NSD) top layer and nanocomposite (NC) buried layer, is examined by electric measurements. In the proposed field-effect organic nanomaterial structure produced within the PMMA network by ion implantation with low energy (50 keV) Si+ at the fluence of 3.2 × 1016 cm-2 the gate NSD is ion-nanotracks-modified low-conductive surface layer, and the channel NC consists of carbon nanoclusters. In the studied ion-modified PMMA field-effect configuration, the gate NSD and the buried NC are formed as planar layers both with a thickness of about 80 nm. The NC channel of nano-clustered amorphous carbon (that is an organic semiconductor) provides a huge increase in the electrical conduction of the material in the subsurface region, but also modulates the electric field distribution in the drift region. The field effect via the gate NSD is analyzed. The most important performance parameters, such as the charge carrier field-effect mobility and amplification of this particular type of PMMA- based transconductance device with NC n-type channel and gate NSD top layer, are determined.

  15. Development of a double-layered ceramic filter for aerosol filtration at high-temperatures: the filter collection efficiency.

    Science.gov (United States)

    de Freitas, Normanda L; Gonçalves, José A S; Innocentini, Murilo D M; Coury, José R

    2006-08-25

    The performance of double-layered ceramic filters for aerosol filtration at high temperatures was evaluated in this work. The filtering structure was composed of two layers: a thin granular membrane deposited on a reticulate ceramic support of high porosity. The goal was to minimize the high pressure drop inherent of granular structures, without decreasing their high collection efficiency for small particles. The reticulate support was developed using the technique of ceramic replication of polyurethane foam substrates of 45 and 75 pores per inch (ppi). The filtering membrane was prepared by depositing a thin layer of granular alumina-clay paste on one face of the support. Filters had their permeability and fractional collection efficiency analyzed for filtration of an airborne suspension of phosphatic rock in temperatures ranging from ambient to 700 degrees C. Results revealed that collection efficiency decreased with gas temperature and was enhanced with filtration time. Also, the support layer influenced the collection efficiency: the 75 ppi support was more effective than the 45 ppi. Particle collection efficiency dropped considerably for particles below 2 microm in diameter. The maximum collection occurred for particle diameters of approximately 3 microm, and decreased again for diameters between 4 and 8 microm. Such trend was successfully represented by the proposed correlation, which is based on the classical mechanisms acting on particle collection. Inertial impaction seems to be the predominant collection mechanism, with particle bouncing/re-entrainment acting as detachment mechanisms.

  16. Characterization of Li-rich layered oxides by using transmission electron microscope

    Directory of Open Access Journals (Sweden)

    Hu Zhao

    2017-07-01

    Full Text Available Lithium-rich layered oxides (LrLOs deliver extremely high specific capacities and are considered to be promising candidates for electric vehicle and smart grid applications. However, the application of LrLOs needs further understanding of the structural complexity and dynamic evolution of monoclinic and rhombohedral phases, in order to overcome the issues including voltage decay, poor rate capability, initial irreversible capacity loss and etc. The development of aberration correction for the transmission electron microscope and concurrent progress in electron spectroscopy, have fueled rapid progress in the understanding of the mechanism of such issues. New techniques based on the transmission electron microscope are first surveyed, and the applications of these techniques for the study of the structure, migration of transition metal, and the activation of oxygen of LrLOs are then explored in detail, with a particular focus on the mechanism of voltage decay. Keywords: Lithium-ion battery, Transmission electron microscope, Lithium-rich layered oxide, Cathode material

  17. Collective behaviours: from biochemical kinetics to electronic circuits

    Science.gov (United States)

    Agliari, Elena; Barra, Adriano; Burioni, Raffaella; di Biasio, Aldo; Uguzzoni, Guido

    2013-12-01

    In this work we aim to highlight a close analogy between cooperative behaviors in chemical kinetics and cybernetics; this is realized by using a common language for their description, that is mean-field statistical mechanics. First, we perform a one-to-one mapping between paradigmatic behaviors in chemical kinetics (i.e., non-cooperative, cooperative, ultra-sensitive, anti-cooperative) and in mean-field statistical mechanics (i.e., paramagnetic, high and low temperature ferromagnetic, anti-ferromagnetic). Interestingly, the statistical mechanics approach allows a unified, broad theory for all scenarios and, in particular, Michaelis-Menten, Hill and Adair equations are consistently recovered. This framework is then tested against experimental biological data with an overall excellent agreement. One step forward, we consistently read the whole mapping from a cybernetic perspective, highlighting deep structural analogies between the above-mentioned kinetics and fundamental bricks in electronics (i.e. operational amplifiers, flashes, flip-flops), so to build a clear bridge linking biochemical kinetics and cybernetics.

  18. Generation of Suprathermal Electrons by Collective Processes in Collisional Plasma

    Science.gov (United States)

    Tigik, S. F.; Ziebell, L. F.; Yoon, P. H.

    2017-11-01

    The ubiquity of high-energy tails in the charged particle velocity distribution functions (VDFs) observed in space plasmas suggests the existence of an underlying process responsible for taking a fraction of the charged particle population out of thermal equilibrium and redistributing it to suprathermal velocity and energy ranges. The present Letter focuses on a new and fundamental physical explanation for the origin of suprathermal electron velocity distribution function (EVDF) in a collisional plasma. This process involves a newly discovered electrostatic bremsstrahlung (EB) emission that is effective in a plasma in which binary collisions are present. The steady-state EVDF dictated by such a process corresponds to a Maxwellian core plus a quasi-inverse power-law tail, which is a feature commonly observed in many space plasma environments. In order to demonstrate this, the system of self-consistent particle- and wave-kinetic equations are numerically solved with an initially Maxwellian EVDF and Langmuir wave spectral intensity, which is a state that does not reflect the presence of EB process, and hence not in force balance. The EB term subsequently drives the system to a new force-balanced steady state. After a long integration period it is demonstrated that the initial Langmuir fluctuation spectrum is modified, which in turn distorts the initial Maxwellian EVDF into a VDF that resembles the said core-suprathermal VDF. Such a mechanism may thus be operative at the coronal source region, which is characterized by high collisionality.

  19. Transmission electron microscopy characterization of Zircaloy-4 and ZIRLO™ oxide layers

    International Nuclear Information System (INIS)

    Gabory, Benoit de; Motta, Arthur T.; Wang, Ke

    2015-01-01

    Waterside corrosion of zirconium alloy nuclear fuel cladding varies markedly from one alloy to another. In addition, for a given alloy, the corrosion rate evolves during the corrosion process, most notably when the oxide loses its stability at the oxide transition. In an effort to understand the mechanism resulting in the variations of corrosion rate observed at the oxide transition, oxide layers formed on Zircaloy-4 and ZIRLO™ in high temperature water autoclave environments, and archived before and after the transition, are characterized using transmission electron microscopy. The study characterizes and compares the oxide morphology in both alloys at different times during the corrosion process, in an effort to understand the oxide growth mechanism for these alloys. Results show that the oxide is mainly composed of monoclinic ZrO 2 , with a preponderance of columnar oxide grains which extend to the oxide/metal interface. The oxide formed right after the transition has occurred, exhibits a 150 nm-wide layer of small equiaxed grains with high tetragonal oxide fraction. This layer has a similar morphology and structure as the first oxide layer formed (observed near the oxide/water interface). A study of the oxygen-rich region near the oxide/metal interface reveals a complex structure of different phases at different stages of corrosion. The interface exhibits an intermediate layer, identified as ZrO, a discontinuous layer of “blocky” Zr 3 O grains embedded in the ZrO layer, and a suboxide layer corresponding to an oxygen saturated solid solution in the metal matrix side. The thickness of this interfacial layer decreased markedly at the transition. Hydrides are also observed in that region, with a definite orientation relationship with the matrix. The observations of the oxide/metal interface are qualitatively similar for the two alloys but quantitatively different. The incorporation of intermetallic precipitates into the oxide layer is also studied, and

  20. Control of electronic properties of 2D carbides (MXenes) by manipulating their transition metal layers

    KAUST Repository

    Anasori, Babak

    2016-02-24

    In this study, a transition from metallic to semiconducting-like behavior has been demonstrated in two-dimensional (2D) transition metal carbides by replacing titanium with molybdenum in the outer transition metal (M) layers of M3C2 and M4C3 MXenes. The MXene structure consists of n + 1 layers of near-close packed M layers with C or N occupying the octahedral site between them in an [MX]nM arrangement. Recently, two new families of ordered 2D double transition metal carbides MXenes were discovered, M′2M′′C2 and M′2M′′2C3 – where M′ and M′′ are two different early transition metals, such as Mo, Cr, Ta, Nb, V, and Ti. The M′ atoms only occupy the outer layers and the M′′ atoms fill the middle layers. In other words, M′ atomic layers sandwich the middle M′′–C layers. Using X-ray atomic pair distribution function (PDF) analysis on Mo2TiC2 and Mo2Ti2C3 MXenes, we present the first quantitative analysis of structures of these novel materials and experimentally confirm that Mo atoms are in the outer layers of the [MC]nM structures. The electronic properties of these Mo-containing MXenes are compared with their Ti3C2 counterparts, and are found to be no longer metallic-like conductors; instead the resistance increases mildly with decreasing temperatures. Density functional theory (DFT) calculations suggest that OH terminated Mo–Ti MXenes are semiconductors with narrow band gaps. Measurements of the temperature dependencies of conductivities and magnetoresistances have confirmed that Mo2TiC2Tx exhibits semiconductor-like transport behavior, while Ti3C2Tx is a metal. This finding opens new avenues for the control of the electronic and optical applications of MXenes and for exploring new applications, in which semiconducting properties are required.

  1. The electron edge of the low latitude boundary layer during accelerated flow events

    International Nuclear Information System (INIS)

    Gosling, J.T.; Thomsen, M.F.; Bame, S.J.; Onsager, T.G.; Russel, C.T.

    1990-01-01

    Magnetosheath plasma entering the Earth's magnetosphere to populate the low latitude boundary layer, LLBL, is often accelerated to speeds considerably greater than are observed in the adjacent magnetosheath. Measurements made during such accelerated flow events reveal separate electron and ion edges to the LLBL, with the electron edge being found earthward of the ion edge. Plasma electron velocity distributions observed at the earthward edge of the LLBL are often highly structured, exhibiting large asymmetries parallel and antiparallel, as well as perpendicular, to the local magnetic field. These features can consistently be interpreted as time-of-flight effects on recently reconnected field lines, and thus are strong evidence in support of the reconnection interpretation of accelerated plasma flow events

  2. Electron mobility in few-layer MoxW1-xS2

    International Nuclear Information System (INIS)

    Chandrasekar, Hareesh; Nath, Digbijoy N

    2015-01-01

    Heterostructures of two-dimensional (2D) layered materials are increasingly being explored for electronics in order to potentially extend conventional transistor scaling and to exploit new device designs and architectures. Alloys form a key underpinning of any heterostructure device technology and therefore an understanding of their electronic properties is essential. In this paper, we study the intrinsic electron mobility in few-layer Mo x W 1−x S 2 as limited by various scattering mechanisms. The room temperature, energy-dependent scattering times corresponding to polar longitudinal optical (LO) phonon, alloy and background impurity scattering mechanisms are estimated based on the Born approximation to Fermi’s golden rule. The contribution of individual scattering rates is analyzed as a function of 2D electron density as well as of alloy composition in Mo x W 1−x S 2 . While impurity scattering limits the mobility for low carrier densities (<2–4×10 12 cm −2 ), LO polar phonon scattering is the dominant mechanism for high electron densities. Alloy scattering is found to play a non-negligible role for 0.5 < x < 0.7 in Mo x W 1−x S 2 . The LO phonon-limited and impurity-limited mobilities show opposing trends with respect to alloy mole fractions. The understanding of electron mobility in Mo x W 1−x S 2 presented here is expected to enable the design and realization of heterostructures and devices based on alloys of MoS 2 and WS 2 . (paper)

  3. 78 FR 35279 - Agency Information Collection Activities; Proposed Collection; Comment Request; Electronic Products

    Science.gov (United States)

    2013-06-12

    ... proposed extension of an existing collection of information, and to allow 60 days for public comment in...)(2)(A) of the PRA (44 U.S.C. 3506(c)(2)(A)) requires Federal Agencies to provide a 60-day notice in... Products'' FDA Form 3646 ``Mercury Vapor Lamp Products Radiation Safety Report'' FDA Form 3647 ``Guide for...

  4. 77 FR 71035 - Financial Management Service; Proposed Collection of Information: Electronic Funds Transfer (EFT...

    Science.gov (United States)

    2012-11-28

    ... DEPARTMENT OF THE TREASURY Fiscal Service Financial Management Service; Proposed Collection of Information: Electronic Funds Transfer (EFT) Market Research Study AGENCY: Financial Management Service, Fiscal Service, Treasury. ACTION: Notice and Request for comments. SUMMARY: The Financial Management...

  5. Sodium bromide electron-extraction layers for polymer bulk-heterojunction solar cells

    International Nuclear Information System (INIS)

    Gao, Zhi; Qu, Bo; Xiao, Lixin; Chen, Zhijian; Zhang, Lipei; Gong, Qihuang

    2014-01-01

    Inexpensive and non-toxic sodium bromide (NaBr) was introduced into polymer solar cells (PSCs) as the cathode buffer layer (CBL) and the electron extraction characteristics of the NaBr CBL were investigated in detail. The PSCs based on NaBr CBL with different thicknesses (i.e., 0 nm, 0.5 nm, 1 nm, and 1.5 nm) were prepared and studied. The optimal thickness of NaBr was 1 nm according to the photovoltaic data of PSCs. The open-circuit voltage (V oc ), short-circuit current density (J sc ), fill factor (FF), and power conversion efficiency (PCE) of the PSC with 1 nm NaBr were evaluated to be 0.58 V, 7.36 mA/cm 2 , 0.63, and 2.70%, respectively, which were comparable to those of the reference device with the commonly used LiF. The optimized photovoltaic performance of PSC with 1 nm NaBr was ascribed to the improved electron transport and extraction capability of 1 nm NaBr in PSCs. In addition, the NaBr CBL could prevent the diffusion of oxygen and water vapor into the active layer and prolong the lifetime of the devices to some extent. Therefore, NaBr layer could be considered as a promising non-toxic CBL for PSCs in future

  6. Ultrasonically spray coated silver layers from designed precursor inks for flexible electronics

    Science.gov (United States)

    Marchal, W.; Vandevenne, G.; D'Haen, J.; Almeida, A. Calmont de Andrade; Durand Sola, M. A., Jr.; van den Ham, E. J.; Drijkoningen, J.; Elen, K.; Deferme, W.; Van Bael, M. K.; Hardy, A.

    2017-05-01

    Integration of electronic circuit components onto flexible materials such as plastic foils, paper and textiles is a key challenge for the development of future smart applications. Therefore, conductive metal features need to be deposited on temperature sensitive substrates in a fast and straightforward way. The feasibility of these emerging (nano-) electronic technologies depends on the availability of well-designed deposition techniques and on novel functional metal inks. As ultrasonic spray coating (USSC) is one of the most promising techniques to meet the above requirements, innovative metal organic decomposition (MOD) inks are designed to deposit silver features on plastic foils. Various amine ligands were screened and their influence on the ink stability and the characteristics of the resulting metal depositions were evaluated to determine the optimal formulation. Eventually, silver layers with excellent performance in terms of conductivity (15% bulk silver conductivity), stability, morphology and adhesion could be obtained, while operating in a very low temperature window of 70 °C-120 °C. Moreover, the optimal deposition conditions were determined via an in-depth analysis of the ultrasonically sprayed silver layers. Applying these tailored MOD inks, the USSC technique enabled smooth, semi-transparent silver layers with a tunable thickness on large areas without time-consuming additional sintering steps after deposition. Therefore, this novel combination of nanoparticle-free Ag-inks and the USSC process holds promise for high throughput deposition of highly conductive silver features on heat sensitive substrates and even 3D objects.

  7. Particle dynamics and current-free double layers in an expanding, collisionless, two-electron-population plasma

    International Nuclear Information System (INIS)

    Hairapetian, G.; Stenzel, R.L.

    1991-01-01

    The expansion of a two-electron-population, collisionless plasma into vacuum is investigated experimentally. Detailed in situ measurements of plasma density, plasma potential, electric field, and particle distribution functions are performed. At the source, the electron population consists of a high-density, cold (kT e congruent 4 eV) Maxwellian, and a sparse, energetic ( (1)/(2) mv 2 e congruent 80 eV) tail. During the expansion of plasma, space-charge effects self-consistently produce an ambipolar electric field whose amplitude is controlled by the energy of tail electrons. The ambipolar electric field accelerates a small number (∼1%) of ions to streaming energies which exceed and scale linearly with the energy of tail electrons. As the expansion proceeds, the energetic tail electrons electrostatically trap the colder Maxwellian electrons and prevent them from reaching the expansion front. A potential double layer develops at the position of the cold electron front. Upstream of the double layer both electron populations exist; but downstream, only the tail electrons do. Hence, the expansion front is dominated by retarded tail electrons. Initially, the double layer propagates away from the source with a speed approximately equal to the ion sound speed in the cold electron population. The propagation speed is independent of the tail electron energy. At later times, the propagating double layer slows down and eventually stagnates. The final position and amplitude of the double layer are controlled by the relative densities of the two electron populations in the source. The steady-state double layer persists till the end of the discharge (Δt congruent 1 msec), much longer than the ion transit time through the device (t congruent 150 μsec)

  8. Optimising waste from electric and electronic equipment collection systems: a comparison of approaches in European countries.

    Science.gov (United States)

    Friege, Henning; Oberdörfer, Michael; Günther, Marko

    2015-03-01

    The first European waste from electric and electronic equipment directive obliged the Member States to collect 4 kg of used devices per inhabitant and year. The target of the amended directive focuses on the ratio between the amount of waste from electric and electronic equipment collected and the mass of electric and electronic devices put on the market in the three foregoing years. The minimum collection target is 45% starting in 2016, being increased to 65% in 2019 or alternatively 85% of waste from electric and electronic equipment generated. Being aware of the new target, the question arises how Member States with 'best practice' organise their collection systems and how they enforce the parties in this playing field. Therefore the waste from electric and electronic equipment schemes of Sweden, Denmark, Switzerland, Germany and the Flemish region of Belgium were investigated focusing on the categories IT and telecommunications equipment, consumer equipment like audio systems and discharge lamps containing hazardous substances, e.g. mercury. The systems for waste from electric and electronic equipment collection in these countries vary considerably. Recycling yards turned out to be the backbone of waste from electric and electronic equipment collection in most countries studied. For discharge lamps, take-back by retailers seems to be more important. Sampling points like special containers in shopping centres, lidded waste bins and complementary return of used devices in all retail shops for electric equipment may serve as supplements. High transparency of collection and recycling efforts can encourage ambition among the concerned parties. Though the results from the study cannot be transferred in a simplistic manner, they serve as an indication for best practice methods for waste from electric and electronic equipment collection. © The Author(s) 2015.

  9. Control-grid electron gun as a source of modulated electron beam for a collective accelerator

    International Nuclear Information System (INIS)

    Bakumenko, A.A.; Belikov, V.V.; Zvyagintsev, A.V.; Lyul'chenko, V.I.; Lymar', A.G.; Martynenko, P.A.; Suryadnyj, A.V.

    1989-01-01

    Structure is described and experimental results of investigations into an electron gun with transverse beam compression and control grid are presented. The pulse trailing edge is formed by a sectioned discharger. A modulated electron beam with the following parameters: 110 keV beam energy, 70 A current amplitude, 3-8 MHz modulation frequency, 100% modulation depth, ≅8-6 mm minimal beam diameter, ≅ 10μs pulse duration, 3% pulse top non-uniformity, more than 200 compression degree is obtained when introducing the positive feedback in auto-generator regime to the gun supply circuit. Further it is supposed to use the developed electron gun for heavy ion acceleration by a field of space charge of a modulated electron beam in a corrugated liner. It should be underlined that power supply of such an accelerator does not require powerful outside HF generator. 5 refs.; 1 fig

  10. Misfit Strain in Superlattices Controlling the Electron-Lattice Interaction via Micro strain in Active Layers

    International Nuclear Information System (INIS)

    Poccia, N.; Ricci, A.; Bianconi, N.

    2010-01-01

    High-temperature superconductivity (HTS) emerges in quite different electronic materials: cuprates, diborides, and iron-pnictide superconductors. Looking for unity in the diversity we find in all these materials a common lattice architecture: they are practical realizations of heterostructures at atomic limit made of superlattices of metallic active layers intercalated by spacers as predicted in 1993 by one of us. The multilayer architecture is the key feature for the presence of electronic topological transitions where the Fermi surface of one of the subbands changes dimensionality. The superlattice misfit strain η between the active and spacer layers is shown to be a key variable to drive the system to the highest critical temperature Tc that occurs at a particular point of the 3D phase diagram Tc(θ, η) where d is the charge transfer or doping. The plots of Tc as a function of misfit strain at constant charge transfer in cuprates show a first-order quantum critical phase transition where an itinerant striped magnetic phase competes with superconductivity in the proximity of a structural phase transition, that is, associated with an electronic topological transition. The shape resonances in these multi gap superconductors is associated with the maximum Tc.

  11. Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics.

    Science.gov (United States)

    Cheng, Rui; Jiang, Shan; Chen, Yu; Liu, Yuan; Weiss, Nathan; Cheng, Hung-Chieh; Wu, Hao; Huang, Yu; Duan, Xiangfeng

    2014-10-08

    Two-dimensional layered materials, such as molybdenum disulfide, are emerging as an exciting material system for future electronics due to their unique electronic properties and atomically thin geometry. Here we report a systematic investigation of MoS2 transistors with optimized contact and device geometry, to achieve self-aligned devices with performance including an intrinsic gain over 30, an intrinsic cut-off frequency fT up to 42 GHz and a maximum oscillation frequency fMAX up to 50 GHz, exceeding the reported values for MoS2 transistors to date (fT~0.9 GHz, fMAX~1 GHz). Our results show that logic inverters or radio frequency amplifiers can be formed by integrating multiple MoS2 transistors on quartz or flexible substrates with voltage gain in the gigahertz regime. This study demonstrates the potential of two-dimensional layered semiconductors for high-speed flexible electronics.

  12. Numerical simulation of electronic properties of coupled quantum dots on wetting layers

    International Nuclear Information System (INIS)

    Betcke, M M; Voss, H

    2008-01-01

    Self-assembled quantum dots are grown on wetting layers and frequently in an array-like assembly of many similar but not exactly equal dots. Nevertheless, most simulations disregard these structural conditions and restrict themselves to simulating a pure single quantum dot. For reasons of numerical efficiency we advocate the effective one-band Hamiltonian with energy- and position-dependent effective mass approximation and a finite height hard-wall 3D confinement potential for computation of the energy levels of the electrons in the conduction band. Within this model we investigate the geometrical effects mentioned above on the electronic structure of a pyramidal InAs quantum dot embedded in a GaAs matrix. We find that the presence of a wetting layer may affect the electronic structure noticeably. Furthermore, we establish that, in spite of the large bandgap of the InAs/GaAs heterostructure, if the dots in a vertically aligned array are sufficiently close stacked there is considerable interaction between their eigenfunctions. Moreover, the eigenfunctions of such an array are quite sensitive to certain structural perturbations

  13. Electron-temperature-gradient-induced instability in tokamak scrape-off layers

    International Nuclear Information System (INIS)

    Berk, H.L.; Ryutov, D.D.; Tsidulko, Y.A.; Xu, X.Q.

    1992-08-01

    An electron temperature instability driven by the Kunkel-Guillory sheath impedance, has been applied to the scrape-off layer of tokamaks. The formalism has been generalized to more fully account for parallel wavelength dynamics, to differentiate between electromagnetic and electrostatic perturbations and to account for particle recycling effects. It is conjectured that this conducting wall instability leads to edge fluctuations in tokamaks that produce scrape-off widths of many ion Larmor radii ≅10. The predicted instability characteristics correlate somewhat with DIII-D edge fluctuation data, and the scrape-off layer width in the DIII-D experiment agrees with theoretical estimates that can be derived from mixing lenght theory

  14. Dimensional crossover of electron weak localization in ZnO/TiO{sub x} stacked layers grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Saha, D., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Misra, P., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Joshi, M. P.; Kukreja, L. M. [Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India); Bhartiya, S. [Laser Materials Development & Devices Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India); Gupta, M. [UGC-DAE Consortium for Scientific Research, Indore 452 017 (India)

    2016-01-25

    We report on the dimensional crossover of electron weak localization in ZnO/TiO{sub x} stacked layers having well-defined and spatially-localized Ti dopant profiles along film thickness. These films were grown by in situ incorporation of sub-monolayer TiO{sub x} on the growing ZnO film surface and subsequent overgrowth of thin conducting ZnO spacer layer using atomic layer deposition. Film thickness was varied in the range of ∼6–65 nm by vertically stacking different numbers (n = 1–7) of ZnO/TiO{sub x} layers of nearly identical dopant-profiles. The evolution of zero-field sheet resistance (R{sub ◻}) versus temperature with decreasing film thickness showed a metal to insulator transition. On the metallic side of the metal-insulator transition, R{sub ◻}(T) and magnetoresistance data were found to be well corroborated with the theoretical framework of electron weak localization in the diffusive transport regime. The temperature dependence of both R{sub ◻} and inelastic scattering length provided strong evidence for a smooth crossover from 2D to 3D weak localization behaviour. Results of this study provide deeper insight into the electron transport in low-dimensional n-type ZnO/TiO{sub x} stacked layers which have potential applications in the field of transparent oxide electronics.

  15. Electron spectroscopy of the interface carbon layer formation on the cleavage surfaces of the layered semiconductor In4Se3 crystals

    International Nuclear Information System (INIS)

    Galiy, P.V.; Musyanovych, A.V.; Nenchuk, T.M.

    2005-01-01

    The results of the quantitative X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) of the interface carbon layer formation on the cleavage surfaces of the layered semiconductor In 4 Se 3 crystals are presented. The carbon coating formation occurs as the result of interaction of the air and residual gases atmosphere in ultra high vacuum (UHV) Auger spectrometer chamber with atomic clean interlayer cleavage surfaces of the crystals. The kinetics and peculiarities of interfacial carbon layer formation on the cleavage surfaces of the crystals, elemental and phase composition of the interface have been studied by quantitative XPS, AES and mass-spectroscopy

  16. Assessment of doses caused by electrons in thin layers of tissue-equivalent materials, using MCNP.

    Science.gov (United States)

    Heide, Bernd

    2013-10-01

    Absorbed doses caused by electron irradiation were calculated with Monte Carlo N-Particle transport code (MCNP) for thin layers of tissue-equivalent materials. The layers were so thin that the calculation of energy deposition was on the border of the scope of MCNP. Therefore, in this article application of three different methods of calculation of energy deposition is discussed. This was done by means of two scenarios: in the first one, electrons were emitted from the centre of a sphere of water and also recorded in that sphere; and in the second, an irradiation with the PTB Secondary Standard BSS2 was modelled, where electrons were emitted from an (90)Sr/(90)Y area source and recorded inside a cuboid phantom made of tissue-equivalent material. The speed and accuracy of the different methods were of interest. While a significant difference in accuracy was visible for one method in the first scenario, the difference in accuracy of the three methods was insignificant for the second one. Considerable differences in speed were found for both scenarios. In order to demonstrate the need for calculating the dose in thin small zones, a third scenario was constructed and simulated as well. The third scenario was nearly equal to the second one, but a pike of lead was assumed to be inside the phantom in addition. A dose enhancement (caused by the pike of lead) of ∼113 % was recorded for a thin hollow cylinder at a depth of 0.007 cm, which the basal-skin layer is referred to in particular. Dose enhancements between 68 and 88 % were found for a slab with a radius of 0.09 cm for all depths. All dose enhancements were hardly noticeable for a slab with a cross-sectional area of 1 cm(2), which is usually applied to operational radiation protection.

  17. Adsorption and electronic properties of pentacene on thin dielectric decoupling layers

    Directory of Open Access Journals (Sweden)

    Sebastian Koslowski

    2017-07-01

    Full Text Available With the increasing use of thin dielectric decoupling layers to study the electronic properties of organic molecules on metal surfaces, comparative studies are needed in order to generalize findings and formulate practical rules. In this paper we study the adsorption and electronic properties of pentacene deposited onto h-BN/Rh(111 and compare them with those of pentacene deposited onto KCl on various metal surfaces. When deposited onto KCl, the HOMO and LUMO energies of the pentacene molecules scale with the work functions of the combined KCl/metal surface. The magnitude of the variation between the respective KCl/metal systems indicates the degree of interaction of the frontier orbitals with the underlying metal. The results confirm that the so-called IDIS model developed by Willenbockel et al. applies not only to molecular layers on bare metal surfaces, but also to individual molecules on thin electronically decoupling layers. Depositing pentacene onto h-BN/Rh(111 results in significantly different adsorption characteristics, due to the topographic corrugation of the surface as well as the lateral electric fields it presents. These properties are reflected in the divergence from the aforementioned trend for the orbital energies of pentacene deposited onto h-BN/Rh(111, as well as in the different adsorption geometry. Thus, the highly desirable capacity of h-BN to trap molecules comes at the price of enhanced metal–molecule interaction, which decreases the HOMO–LUMO gap of the molecules. In spite of the enhanced interaction, the molecular orbitals are evident in scanning tunnelling spectroscopy (STS and their shapes can be resolved by spectroscopic mapping.

  18. Adsorption and electronic properties of pentacene on thin dielectric decoupling layers.

    Science.gov (United States)

    Koslowski, Sebastian; Rosenblatt, Daniel; Kabakchiev, Alexander; Kuhnke, Klaus; Kern, Klaus; Schlickum, Uta

    2017-01-01

    With the increasing use of thin dielectric decoupling layers to study the electronic properties of organic molecules on metal surfaces, comparative studies are needed in order to generalize findings and formulate practical rules. In this paper we study the adsorption and electronic properties of pentacene deposited onto h-BN/Rh(111) and compare them with those of pentacene deposited onto KCl on various metal surfaces. When deposited onto KCl, the HOMO and LUMO energies of the pentacene molecules scale with the work functions of the combined KCl/metal surface. The magnitude of the variation between the respective KCl/metal systems indicates the degree of interaction of the frontier orbitals with the underlying metal. The results confirm that the so-called IDIS model developed by Willenbockel et al. applies not only to molecular layers on bare metal surfaces, but also to individual molecules on thin electronically decoupling layers. Depositing pentacene onto h-BN/Rh(111) results in significantly different adsorption characteristics, due to the topographic corrugation of the surface as well as the lateral electric fields it presents. These properties are reflected in the divergence from the aforementioned trend for the orbital energies of pentacene deposited onto h-BN/Rh(111), as well as in the different adsorption geometry. Thus, the highly desirable capacity of h-BN to trap molecules comes at the price of enhanced metal-molecule interaction, which decreases the HOMO-LUMO gap of the molecules. In spite of the enhanced interaction, the molecular orbitals are evident in scanning tunnelling spectroscopy (STS) and their shapes can be resolved by spectroscopic mapping.

  19. A layer-by-layer ZnO nanoparticle-PbS quantum dot self-assembly platform for ultrafast interfacial electron injection

    KAUST Repository

    Eita, Mohamed Samir

    2014-08-28

    Absorbent layers of semiconductor quantum dots (QDs) are now used as material platforms for low-cost, high-performance solar cells. The semiconductor metal oxide nanoparticles as an acceptor layer have become an integral part of the next generation solar cell. To achieve sufficient electron transfer and subsequently high conversion efficiency in these solar cells, however, energy-level alignment and interfacial contact between the donor and the acceptor units are needed. Here, the layer-by-layer (LbL) technique is used to assemble ZnO nanoparticles (NPs), providing adequate PbS QD uptake to achieve greater interfacial contact compared with traditional sputtering methods. Electron injection at the PbS QD and ZnO NP interface is investigated using broadband transient absorption spectroscopy with 120 femtosecond temporal resolution. The results indicate that electron injection from photoexcited PbS QDs to ZnO NPs occurs on a time scale of a few hundred femtoseconds. This observation is supported by the interfacial electronic-energy alignment between the donor and acceptor moieties. Finally, due to the combination of large interfacial contact and ultrafast electron injection, this proposed platform of assembled thin films holds promise for a variety of solar cell architectures and other settings that principally rely on interfacial contact, such as photocatalysis. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Post-ion beam induced degradation of copper layers in transmission electron microscopy specimens

    Science.gov (United States)

    Seidel, F.; Richard, O.; Bender, H.; Vandervorst, W.

    2015-11-01

    Copper containing transmission electron microscopy (TEM) specimens frequently show corrosion after focused ion beam (FIB) preparation. This paper reveals that the corrosion product is a Cu-S phase growing over the specimen surface. The layer is identified by energy-dispersive x-ray spectroscopy, and lattice spacing indexing of power spectra patterns. The corrosion process is further studied by TEM on cone-shaped specimens, which are intentionally stored after FIB preparation with S flakes for short time. Furthermore, a protective method against corrosion is developed by varying the time in the FIB vacuum and the duration of a subsequent plasma cleaning.

  1. Layer- and lateral-resolved magnetization studies using photoemission electron microscopy

    International Nuclear Information System (INIS)

    Wei, D.H.; Hsu, Y.J.; Lin, C.-C.; Lai, C.-H.; Ou, J.Y.; Wu, J.C.

    2004-01-01

    The magnetic circular dichroism in X-ray absorption is employed to study the element-specific magnetization in a TbFe/Co bilayer system and patterned Ni 80 Fe 20 film. Taking advantage of the energy tunability as well as the penetration power of synchrotron radiation, the magnetization directions of Co and Fe deposited in different layers were examined as a function of Co film thickness. For patterned films, the photoemission electron microscope reveals a clear correlation between the magnetic configurations and geometries of the patterns

  2. Correlation of electronic and magnetic properties of thin polymer layers with cobalt nanoparticles

    DEFF Research Database (Denmark)

    Kharchenko, A.; Lukashevich, M.; Popok, Vladimir

    2013-01-01

    Nanoparticles (NPs) of cobalt are synthesized in shallow layers of polyimide using 40 keV implantation of Co+ ions with a few different fluences at various ion current densities. Nucleation of individual NPs at low fluencies and their percolation at high fluencies are crucial processes governing...... of the magnetoresistance on the applied magnetic field allows to suggest spin-dependent domain wall scattering affecting the electron transport. The samples implanted with low fluencies demonstrate superparamagnetic behavior down to very low blocking temperatures. While for high fluence (1.25x1017 cm-2) the transition...

  3. Study in electron microscopy of the formation of the hybrid layer using adhesive systems One Coat and Experimental (EXL 759), at the Facultad de Odontologia of the Universidad de Costa Rica

    International Nuclear Information System (INIS)

    Santamaria Guzman, S. Marcela; Guevara Lopez, Rodrigo

    2012-01-01

    The formation of the hybrid layer is observed in dental pieces in vitro, utilizing conventional adhesives systems and of self etching with different times of acid etching, by applying of electron microscopy. Samples of dental pieces are prepared utilizing conventional adhesive systems as Single Bond 2 of 3M, One Coat of Coltene and the adhesive self etching Experimental (EXL 759) of 3M. Samples of dental pieces collected have been molars recently extracted and later stored in jars with water. Samples prepared with the adhesive systems are observed in the electron microscope to obtain images of the hybrid layers formed. The hybrid layers formed are compared observing the photographs of the images obtained in the electron microscope. The adhesive system that has allowed the formation of a hybrid layer more convenient is determined. The time of acid etching is determined and has interfered in the formation of a hybrid layer more stable [es

  4. Growth and electronic structure of single-layered transition metal dichalcogenides

    DEFF Research Database (Denmark)

    Dendzik, Maciej

    2016-01-01

    only a weak interaction between SL MoS2 and graphene, which leads to a quasi-freestanding band structure, but also to the coexistence of multiple rotational domains. Measurements of SL WS2 on Ag(111), on the other hand, reveals formation of interesting in-gap states which make WS2 metallic. Low...... different from graphene’s. For example, semiconducting TMDCs undergo an indirectdirect band gap transition when thinned to a single layer (SL); this results in greatly enhanced photoluminescence, making those materials attractive for applications in optoelectronics. Furthermore, metallic TMDCs can host......-quality SL TMDCs. We demonstrate the synthesis of SL MoS2, WS2 and TaS2 on Au(111), Ag(111) and graphene on SiC. The morphology and crystal structure of the synthesized materials is characterized by scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED). The electronic structure of SL...

  5. Research Update: The electronic structure of hybrid perovskite layers and their energetic alignment in devices

    Directory of Open Access Journals (Sweden)

    Selina Olthof

    2016-09-01

    Full Text Available In recent years, the interest in hybrid organic–inorganic perovskites has increased at a rapid pace due to their tremendous success in the field of thin film solar cells. This area closely ties together fundamental solid state research and device application, as it is necessary to understand the basic material properties to optimize the performances and open up new areas of application. In this regard, the energy levels and their respective alignment with adjacent charge transport layers play a crucial role. Currently, we are lacking a detailed understanding about the electronic structure and are struggling to understand what influences the alignment, how it varies, or how it can be intentionally modified. This research update aims at giving an overview over recent results regarding measurements of the electronic structure of hybrid perovskites using photoelectron spectroscopy to summarize the present status.

  6. Collective acceleration of electrons and ions in a high current relativistic electron beam. Final report

    International Nuclear Information System (INIS)

    Nation, J.A.

    1996-01-01

    The original purpose of this research was an investigation into the use of slow space charge waves on weakly relativistic electron beams for ion acceleration. The work had three main objectives namely, the development of a suitable ion injector, the growth and study of the properties of slow space charge waves on an electron beam, and a combination of the two components parts into a suitable proof of principle demonstration of the wave accelerator. This work focusses on the first two of these objectives

  7. Layer-dependent electronic properties of phosphorene-like materials and phosphorene-based van der Waals heterostructures.

    Science.gov (United States)

    Huang, Y C; Chen, X; Wang, C; Peng, L; Qian, Q; Wang, S F

    2017-06-29

    Black phosphorus is a layered semiconducting allotrope of phosphorus with high carrier mobility. Its monolayer form, phosphorene, is an extremely fashionable two-dimensional material which has promising potential in transistors, optoelectronics and electronics. However, phosphorene-like analogues, especially phosphorene-based heterostructures and their layer-controlled electronic properties, are rarely systematically investigated. In this paper, the layer-dependent structural and electronic properties of phosphorene-like materials, i.e., mono- and few-layer MXs (M = Sn, Ge; X = S, Se), are first studied via first-principles calculations, and then the band edge position of these MXs as well as mono- and few-layer phosphorene are aligned. It is revealed that van der Waals heterostructures with a Moiré superstructure formed by mutual coupling among MXs and among MXs and few-layer phosphorene are able to show type-I or type-II characteristics and a I-II or II-I transition can be induced by adjusting the number of layers. Our work is expected to yield a new family of phosphorene-based semiconductor heterostructures with tunable electronic properties through altering the number of layers of the composite.

  8. Atomic layer deposition on polymer fibers and fabrics for multifunctional and electronic textiles

    Energy Technology Data Exchange (ETDEWEB)

    Brozena, Alexandra H.; Oldham, Christopher J.; Parsons, Gregory N., E-mail: gnp@ncsu.edu [Department of Chemical and Biomolecular Engineering, North Carolina State University, Raleigh, North Carolina 27695-7905 (United States)

    2016-01-15

    Textile materials, including woven cotton, polymer knit fabrics, and synthetic nonwoven fiber mats, are being explored as low-cost, flexible, and light-weight platforms for wearable electronic sensing, communication, energy generation, and storage. The natural porosity and high surface area in textiles is also useful for new applications in environmental protection, chemical decontamination, pharmaceutical and chemical manufacturing, catalytic support, tissue regeneration, and others. These applications raise opportunities for new chemistries, chemical processes, biological coupling, and nanodevice systems that can readily combine with textile manufacturing to create new “multifunctional” fabrics. Atomic layer deposition (ALD) has a unique ability to form highly uniform and conformal thin films at low processing temperature on nonuniform high aspect ratio surfaces. Recent research shows how ALD can coat, modify, and otherwise improve polymer fibers and textiles by incorporating new materials for viable electronic and other multifunctional capabilities. This article provides a current overview of the understanding of ALD coating and modification of textiles, including current capabilities and outstanding problems, with the goal of providing a starting point for further research and advances in this field. After a brief introduction to textile materials and current textile treatment methods, the authors discuss unique properties of ALD-coated textiles, followed by a review of recent electronic and multifunctional textiles that use ALD coatings either as direct functional components or as critical nucleation layers for active materials integration. The article concludes with possible future directions for ALD on textiles, including the challenges in materials, manufacturing, and manufacturing integration that must be overcome for ALD to reach its full potential in electronic and other emerging multifunctional textile systems.

  9. Structure of electron collection electrode in dye-sensitized nanocrystalline TiO2

    International Nuclear Information System (INIS)

    Yanagida, Masatoshi; Numata, Youhei; Yoshimatsu, Keiichi; Ochiai, Masayuki; Naito, Hiroyoshi; Han, Liyuan

    2013-01-01

    As part of the effort to control electron transport in the TiO 2 films of dye-sensitized solar cells (DSCs), the structure of the electron collection electrode on the films has been investigated. Here, we report the comparison between a sandwich-type dye-sensitized solar cell (SW-DSC), in which the TiO 2 film is sandwiched between a TCO glass front electron collection electrode and a sputtered Ti back charge collection electrode, and a normal DSC (N-DSC), which has no back electrode. In N-DSCs, electrons in TiO 2 that are far from the front electrode have to diffuse for a long distance (ca. 10 μm), and therefore, the photocurrent cannot rapidly respond to light with a modulation frequency >100 Hz. In SW-DSCs, the photocurrent response was enhanced at frequencies between 10 and 500 Hz because electrons in TiO 2 can be extracted by both front and back electrodes, which can be also explained by an electron diffusion model. Calculations based on the electron diffusion model suggested that a high short-circuit photocurrent could be maintained in SW-DSCs even when the electron diffusion length in the TiO 2 film was shortened.

  10. Fast electron flux driven by lower hybrid wave in the scrape-off layer

    International Nuclear Information System (INIS)

    Li, Y. L.; Xu, G. S.; Wang, H. Q.; Wan, B. N.; Chen, R.; Wang, L.; Gan, K. F.; Yang, J. H.; Zhang, X. J.; Liu, S. C.; Li, M. H.; Ding, S.; Yan, N.; Zhang, W.; Hu, G. H.; Liu, Y. L.; Shao, L. M.; Li, J.; Chen, L.; Zhao, N.

    2015-01-01

    The fast electron flux driven by Lower Hybrid Wave (LHW) in the scrape-off layer (SOL) in EAST is analyzed both theoretically and experimentally. The five bright belts flowing along the magnetic field lines in the SOL and hot spots at LHW guard limiters observed by charge coupled device and infrared cameras are attributed to the fast electron flux, which is directly measured by retarding field analyzers (RFA). The current carried by the fast electron flux, ranging from 400 to 6000 A/m 2 and in the direction opposite to the plasma current, is scanned along the radial direction from the limiter surface to the position about 25 mm beyond the limiter. The measured fast electron flux is attributed to the high parallel wave refractive index n || components of LHW. According to the antenna structure and the LHW power absorbed by plasma, a broad parallel electric field spectrum of incident wave from the antennas is estimated. The radial distribution of LHW-driven current density is analyzed in SOL based on Landau damping of the LHW. The analytical results support the RFA measurements, showing a certain level of consistency. In addition, the deposition profile of the LHW power density in SOL is also calculated utilizing this simple model. This study provides some fundamental insight into the heating and current drive effects induced by LHW in SOL, and should also help to interpret the observations and related numerical analyses of the behaviors of bright belts and hot spots induced by LHW

  11. Nanometer-resolution electron microscopy through micrometers-thick water layers

    Energy Technology Data Exchange (ETDEWEB)

    Jonge, Niels de, E-mail: niels.de.jonge@vanderbilt.edu [Vanderbilt University Medical Center, Department of Molecular Physiology and Biophysics, Nashville, TN 37232-0615 (United States); Oak Ridge National Laboratory, Materials Science and Technology Division, Oak Ridge, TN 37831-6064 (United States); Poirier-Demers, Nicolas; Demers, Hendrix [Universite de Sherbrooke, Electrical and Computer Engineering, Sherbrooke, Quebec J1K 2R1 (Canada); Peckys, Diana B. [Oak Ridge National Laboratory, Materials Science and Technology Division, Oak Ridge, TN 37831-6064 (United States); University of Tennessee, Center for Environmental Biotechnology, Knoxville, TN 37996-1605 (United States); Drouin, Dominique [Universite de Sherbrooke, Electrical and Computer Engineering, Sherbrooke, Quebec J1K 2R1 (Canada)

    2010-08-15

    Scanning transmission electron microscopy (STEM) was used to image gold nanoparticles on top of and below saline water layers of several micrometers thickness. The smallest gold nanoparticles studied had diameters of 1.4 nm and were visible for a liquid thickness of up to 3.3 {mu}m. The imaging of gold nanoparticles below several micrometers of liquid was limited by broadening of the electron probe caused by scattering of the electron beam in the liquid. The experimental data corresponded to analytical models of the resolution and of the electron probe broadening as function of the liquid thickness. The results were also compared with Monte Carlo simulations of the STEM imaging on modeled specimens of similar geometry and composition as used for the experiments. Applications of STEM imaging in liquid can be found in cell biology, e.g., to study tagged proteins in whole eukaryotic cells in liquid and in materials science to study the interaction of solid:liquid interfaces at the nanoscale.

  12. Inverted Organic Solar Cells with Low-Temperature Al-Doped-ZnO Electron Transport Layer Processed from Aqueous Solution

    Directory of Open Access Journals (Sweden)

    Qianni Zhang

    2018-01-01

    Full Text Available The aqueous-based Zn-ammine complex solutions represent one of the most promising routes to obtain the ZnO electron transport layer (ETL at a low temperature in inverted organic solar cells (OSCs. However, to dope the ZnO film processed from the Zn-ammine complex solutions is difficult since the introduction of metal ions into the Zn-ammine complex is a nontrivial process as ammonium hydroxide tends to precipitate metal salts due to acid-base neutralization reactions. In this paper, we investigate the inverted OSCs with Al-doped-ZnO ETL made by immersion of metallic Al into the Zn-ammine precursor solution. The effects of ZnO layer with different immersion time of Al on film properties and solar cell performance have been studied. The results show that, with the Al-doped-ZnO ETL, an improvement of the device performance could be obtained compared with the device with the un-doped ZnO ETL. The improved device performance is attributed to the enhancement of charge carrier mobility leading to a decreased charge carrier recombination and improved charge collection efficiency. The fabricated thin film transistors with the same ZnO or AZO films confirm the improved electrical characteristics of the Al doped ZnO film.

  13. Engineering of electronic properties of single layer graphene by swift heavy ion irradiation

    Science.gov (United States)

    Kumar, Sunil; Kumar, Ashish; Tripathi, Ambuj; Tyagi, Chetna; Avasthi, D. K.

    2018-04-01

    In this work, swift heavy ion irradiation induced effects on the electrical properties of single layer graphene are reported. The modulation in minimum conductivity point in graphene with in-situ electrical measurement during ion irradiation was studied. It is found that the resistance of graphene layer decreases at lower fluences up to 3 × 1011 ions/cm2, which is accompanied by the five-fold increase in electron and hole mobilities. The ion irradiation induced increase in electron and hole mobilities at lower fluence up to 1 × 1011 ions/cm2 is verified by separate Hall measurements on another irradiated graphene sample at the selected fluence. In contrast to the adverse effects of irradiation on the electrical properties of materials, we have found improvement in electrical mobility after irradiation. The increment in mobility is explained by considering the defect annealing in graphene after irradiation at a lower fluence regime. The modification in carrier density after irradiation is also observed. Based on findings of the present work, we suggest ion beam irradiation as a useful tool for tuning of the electrical properties of graphene.

  14. Plasmonically sensitized metal-oxide electron extraction layers for organic solar cells.

    Science.gov (United States)

    Trost, S; Becker, T; Zilberberg, K; Behrendt, A; Polywka, A; Heiderhoff, R; Görrn, P; Riedl, T

    2015-01-16

    ZnO and TiOx are commonly used as electron extraction layers (EELs) in organic solar cells (OSCs). A general phenomenon of OSCs incorporating these metal-oxides is the requirement to illuminate the devices with UV light in order to improve device characteristics. This may cause severe problems if UV to VIS down-conversion is applied or if the UV spectral range (λ work, silver nanoparticles (AgNP) are used to plasmonically sensitize metal-oxide based EELs in the vicinity (1-20 nm) of the metal-oxide/organic interface. We evidence that plasmonically sensitized metal-oxide layers facilitate electron extraction and afford well-behaved highly efficient OSCs, even without the typical requirement of UV exposure. It is shown that in the plasmonically sensitized metal-oxides the illumination with visible light lowers the WF due to desorption of previously ionosorbed oxygen, in analogy to the process found in neat metal oxides upon UV exposure, only. As underlying mechanism the transfer of hot holes from the metal to the oxide upon illumination with hν < Eg is verified. The general applicability of this concept to most common metal-oxides (e.g. TiOx and ZnO) in combination with different photoactive organic materials is demonstrated.

  15. Electronic properties of moire superlattice bands in layered two dimensional materials

    Science.gov (United States)

    Jung, Jeil

    2014-03-01

    When atomically thin two-dimensional materials are layered they often form incommensurate non-crystalline structures that exhibit long period moiré patterns when examined by scanning probes. In this talk, I will present a theoretical method which can be used to derive an effective Hamiltonian for these twisted van der Waals heterostructures using input from ab initio calculations performed on short-period crystalline structures. I will argue that the effective Hamiltonian can quantitatively describe the electronic properties of these layered systems for arbitrary twist angle and lattice constants. Applying this method to the important cases of graphene on graphene and graphene on hexagonal-boron nitride, I will present a series of experimentally observable quantities that can be extracted from their electronic structure, including their density of states and local density of states as a function of twist angle, and compare with available experiments. Work done in collaboration with Allan MacDonald, Shaffique Adam, Arnaud Raoux, Zhenhua Qiao, and Ashley DaSilva; and supported by the Singapore National Research Foundation Fellowship NRF-NRFF2012-01.

  16. Bulk and interface quantum states of electrons in multi-layer heterostructures with topological materials

    Science.gov (United States)

    Nikolic, Aleksandar; Zhang, Kexin; Barnes, C. H. W.

    2018-06-01

    In this article we describe the bulk and interface quantum states of electrons in multi-layer heterostructures in one dimension, consisting of topological insulators (TIs) and topologically trivial materials. We use and extend an effective four-band continuum Hamiltonian by introducing position dependence to the eight material parameters of the Hamiltonian. We are able to demonstrate complete conduction-valence band mixing in the interface states. We find evidence for topological features of bulk states of multi-layer TI heterostructures, as well as demonstrating both complete and incomplete conduction-valence band inversion at different bulk state energies. We show that the linear k z terms in the low-energy Hamiltonian, arising from overlap of p z orbitals between different atomic layers in the case of chalcogenides, control the amount of tunneling from TIs to trivial insulators. Finally, we show that the same linear k z terms in the low-energy Hamiltonian affect the material’s ability to form the localised interface state, and we demonstrate that due to this effect the spin and probability density localisation in a thin film of Sb2Te3 is incomplete. We show that changing the parameter that controls the magnitude of the overlap of p z orbitals affects the transport characteristics of the topologically conducting states, with incomplete topological state localisation resulting in increased backscattering.

  17. Amorphous indium-gallium-zinc-oxide as electron transport layer in organic photodetectors

    International Nuclear Information System (INIS)

    Arora, H.; Malinowski, P. E.; Chasin, A.; Cheyns, D.; Steudel, S.; Schols, S.; Heremans, P.

    2015-01-01

    Amorphous indium-gallium-zinc-oxide (a-IGZO) is demonstrated as an electron transport layer (ETL) in a high-performance organic photodetector (OPD). Dark current in the range of 10 nA/cm 2 at a bias voltage of −2 V and a high photoresponse in the visible spectrum were obtained in inverted OPDs with poly(3-hexylthiophene) and phenyl-C 61 -butyric acid methyl ester active layer. The best results were obtained for the optimum a-IGZO thickness of 7.5 nm with specific detectivity of 3 × 10 12 Jones at the wavelength of 550 nm. The performance of the best OPD devices using a-IGZO was shown to be comparable to state-of-the-art devices based on TiO x as ETL, with higher rectification achieved in reverse bias. Yield and reproducibility were also enhanced with a-IGZO, facilitating fabrication of large area OPDs. Furthermore, easier integration with IGZO-based readout backplanes can be envisioned, where the channel material can be used as photodiode buffer layer after additional treatment

  18. Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells.

    Science.gov (United States)

    Zhou, Nanjia; Kim, Myung-Gil; Loser, Stephen; Smith, Jeremy; Yoshida, Hiroyuki; Guo, Xugang; Song, Charles; Jin, Hosub; Chen, Zhihua; Yoon, Seok Min; Freeman, Arthur J; Chang, Robert P H; Facchetti, Antonio; Marks, Tobin J

    2015-06-30

    In diverse classes of organic optoelectronic devices, controlling charge injection, extraction, and blocking across organic semiconductor-inorganic electrode interfaces is crucial for enhancing quantum efficiency and output voltage. To this end, the strategy of inserting engineered interfacial layers (IFLs) between electrical contacts and organic semiconductors has significantly advanced organic light-emitting diode and organic thin film transistor performance. For organic photovoltaic (OPV) devices, an electronically flexible IFL design strategy to incrementally tune energy level matching between the inorganic electrode system and the organic photoactive components without varying the surface chemistry would permit OPV cells to adapt to ever-changing generations of photoactive materials. Here we report the implementation of chemically/environmentally robust, low-temperature solution-processed amorphous transparent semiconducting oxide alloys, In-Ga-O and Ga-Zn-Sn-O, as IFLs for inverted OPVs. Continuous variation of the IFL compositions tunes the conduction band minima over a broad range, affording optimized OPV power conversion efficiencies for multiple classes of organic active layer materials and establishing clear correlations between IFL/photoactive layer energetics and device performance.

  19. Amorphous indium-gallium-zinc-oxide as electron transport layer in organic photodetectors

    Energy Technology Data Exchange (ETDEWEB)

    Arora, H. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Phelma–Grenoble INP, 3 Parvis Louis Néel, 38016 Grenoble Cedex 01 (France); Malinowski, P. E., E-mail: pawel.malinowski@imec.be; Chasin, A.; Cheyns, D.; Steudel, S.; Schols, S. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Heremans, P. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); ESAT, Katholieke Universiteit Leuven, Kasteelpark Arenberg 10, B-3001 Leuven (Belgium)

    2015-04-06

    Amorphous indium-gallium-zinc-oxide (a-IGZO) is demonstrated as an electron transport layer (ETL) in a high-performance organic photodetector (OPD). Dark current in the range of 10 nA/cm{sup 2} at a bias voltage of −2 V and a high photoresponse in the visible spectrum were obtained in inverted OPDs with poly(3-hexylthiophene) and phenyl-C{sub 61}-butyric acid methyl ester active layer. The best results were obtained for the optimum a-IGZO thickness of 7.5 nm with specific detectivity of 3 × 10{sup 12} Jones at the wavelength of 550 nm. The performance of the best OPD devices using a-IGZO was shown to be comparable to state-of-the-art devices based on TiO{sub x} as ETL, with higher rectification achieved in reverse bias. Yield and reproducibility were also enhanced with a-IGZO, facilitating fabrication of large area OPDs. Furthermore, easier integration with IGZO-based readout backplanes can be envisioned, where the channel material can be used as photodiode buffer layer after additional treatment.

  20. Electron-stimulated desorption of cesium atoms from cesium layers adsorbed on gold-covered tungsten

    Energy Technology Data Exchange (ETDEWEB)

    Ageev, V N; Kuznetsov, Yu A; Potekhina, N D, E-mail: kuznets@ms.ioffe.r [A F Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021, St Petersburg (Russian Federation)

    2010-03-03

    The electron-stimulated desorption (ESD) yields and energy distributions (ED) for neutral cesium atoms have been measured from cesium layers adsorbed on a gold-covered tungsten surface as a function of electron energy, gold film thickness, cesium coverage and substrate temperature. The measurements have been carried out using a time-of-flight method and surface ionization detector in the temperature range 160-300 K. A measurable ESD yield for Cs atoms is observed only after deposition of more than one monolayer of gold and cesium on a tungsten surface at a temperature T = 300 K, which is accompanied by the formation of a CsAu semiconductor film covered with a cesium atom monolayer. The Cs atom ESD yield as a function of incident electron energy has a resonant character and consists of two peaks, the appearance of which depends on both electron energy and substrate temperature. The first peak has an appearance threshold at an electron energy of 57 eV and a substrate temperature of 300 K that is due to Au 5p{sub 3/2} core level excitation in the substrate. The second peak appears at an electron energy of 24 eV and a substrate temperature of 160 K. It is associated with a Cs 5s core level excitation in the Cs adsorbed layer. The Au 5p{sub 3/2} level excitation corresponds to a single broad peak in the ED with a maximum at a kinetic energy of 0.45 eV at a substrate temperature T = 300 K, which is split into two peaks with maxima at kinetic energies of 0.36 and 0.45 eV at a substrate temperature of 160 K, associated with different Cs atom ESD channels. The Cs 5s level excitation leads to an ED for Cs atoms with a maximum at a kinetic energy of approx 0.57 eV which exists only at T < 240 K and low Cs concentrations. The mechanisms for all the Cs atom ESD channels are proposed and compared with the Na atom ESD channels in the Na-Au-W system.

  1. Electronic structure investigation of atomic layer deposition ruthenium(oxide) thin films using photoemission spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Schaefer, Michael, E-mail: mvschaefer@mail.usf.edu, E-mail: schlaf@mail.usf.edu [Department of Physics, University of South Florida, Tampa, Florida 33620 (United States); Schlaf, Rudy, E-mail: mvschaefer@mail.usf.edu, E-mail: schlaf@mail.usf.edu [Department of Electrical Engineering, University of South Florida, Tampa, Florida 33620 (United States)

    2015-08-14

    Analyzing and manipulating the electronic band line-up of interfaces in novel micro- and nanoelectronic devices is important to achieve further advancement in this field. Such band alignment modifications can be achieved by introducing thin conformal interfacial dipole layers. Atomic layer deposition (ALD), enabling angstrom-precise control over thin film thickness, is an ideal technique for this challenge. Ruthenium (Ru{sup 0}) and its oxide (RuO{sub 2}) have gained interest in the past decade as interfacial dipole layers because of their favorable properties like metal-equivalent work functions, conductivity, etc. In this study, initial results of the electronic structure investigation of ALD Ru{sup 0} and RuO{sub 2} films via photoemission spectroscopy are presented. These experiments give insight into the band alignment, growth behavior, surface structure termination, and dipole formation. The experiments were performed in an integrated vacuum system attached to a home-built, stop-flow type ALD reactor without exposing the samples to the ambient in between deposition and analysis. Bis(ethylcyclopentadienyl)ruthenium(II) was used as precursor and oxygen as reactant. The analysis chamber was outfitted with X-ray photoemission spectroscopy (LIXPS, XPS). The determined growth modes are consistent with a strong growth inhibition situation with a maximum average growth rate of 0.21 Å/cycle for RuO{sub 2} and 0.04 Å/cycle for Ru.{sup 0} An interface dipole of up to −0.93 eV was observed, supporting the assumption of a strongly physisorbed interface. A separate experiment where the surface of a RuO film was sputtered suggests that the surface is terminated by an intermediate, stable, non-stoichiometric RuO{sub 2}/OH compound whose surface is saturated with hydroxyl groups.

  2. Electronic structure investigation of atomic layer deposition ruthenium(oxide) thin films using photoemission spectroscopy

    Science.gov (United States)

    Schaefer, Michael; Schlaf, Rudy

    2015-08-01

    Analyzing and manipulating the electronic band line-up of interfaces in novel micro- and nanoelectronic devices is important to achieve further advancement in this field. Such band alignment modifications can be achieved by introducing thin conformal interfacial dipole layers. Atomic layer deposition (ALD), enabling angstrom-precise control over thin film thickness, is an ideal technique for this challenge. Ruthenium (Ru0) and its oxide (RuO2) have gained interest in the past decade as interfacial dipole layers because of their favorable properties like metal-equivalent work functions, conductivity, etc. In this study, initial results of the electronic structure investigation of ALD Ru0 and RuO2 films via photoemission spectroscopy are presented. These experiments give insight into the band alignment, growth behavior, surface structure termination, and dipole formation. The experiments were performed in an integrated vacuum system attached to a home-built, stop-flow type ALD reactor without exposing the samples to the ambient in between deposition and analysis. Bis(ethylcyclopentadienyl)ruthenium(II) was used as precursor and oxygen as reactant. The analysis chamber was outfitted with X-ray photoemission spectroscopy (LIXPS, XPS). The determined growth modes are consistent with a strong growth inhibition situation with a maximum average growth rate of 0.21 Å/cycle for RuO2 and 0.04 Å/cycle for Ru.0 An interface dipole of up to -0.93 eV was observed, supporting the assumption of a strongly physisorbed interface. A separate experiment where the surface of a RuO film was sputtered suggests that the surface is terminated by an intermediate, stable, non-stoichiometric RuO2/OH compound whose surface is saturated with hydroxyl groups.

  3. Electronic structure investigation of atomic layer deposition ruthenium(oxide) thin films using photoemission spectroscopy

    International Nuclear Information System (INIS)

    Schaefer, Michael; Schlaf, Rudy

    2015-01-01

    Analyzing and manipulating the electronic band line-up of interfaces in novel micro- and nanoelectronic devices is important to achieve further advancement in this field. Such band alignment modifications can be achieved by introducing thin conformal interfacial dipole layers. Atomic layer deposition (ALD), enabling angstrom-precise control over thin film thickness, is an ideal technique for this challenge. Ruthenium (Ru 0 ) and its oxide (RuO 2 ) have gained interest in the past decade as interfacial dipole layers because of their favorable properties like metal-equivalent work functions, conductivity, etc. In this study, initial results of the electronic structure investigation of ALD Ru 0 and RuO 2 films via photoemission spectroscopy are presented. These experiments give insight into the band alignment, growth behavior, surface structure termination, and dipole formation. The experiments were performed in an integrated vacuum system attached to a home-built, stop-flow type ALD reactor without exposing the samples to the ambient in between deposition and analysis. Bis(ethylcyclopentadienyl)ruthenium(II) was used as precursor and oxygen as reactant. The analysis chamber was outfitted with X-ray photoemission spectroscopy (LIXPS, XPS). The determined growth modes are consistent with a strong growth inhibition situation with a maximum average growth rate of 0.21 Å/cycle for RuO 2 and 0.04 Å/cycle for Ru. 0 An interface dipole of up to −0.93 eV was observed, supporting the assumption of a strongly physisorbed interface. A separate experiment where the surface of a RuO film was sputtered suggests that the surface is terminated by an intermediate, stable, non-stoichiometric RuO 2 /OH compound whose surface is saturated with hydroxyl groups

  4. Structural, optical and compositional stability of MoS2 multi-layer flakes under high dose electron beam irradiation

    Science.gov (United States)

    Rotunno, E.; Fabbri, F.; Cinquanta, E.; Kaplan, D.; Longo, M.; Lazzarini, L.; Molle, A.; Swaminathan, V.; Salviati, G.

    2016-06-01

    MoS2 multi-layer flakes, exfoliated from geological molybdenite, have been exposed to high dose electron irradiation showing clear evidence of crystal lattice and stoichiometry modifications. A massive surface sulfur depletion is induced together with the consequent formation of molybdenum nanoislands. It is found that a nanometric amorphous carbon layer, unwillingly deposited during the transmission electron microscope experiments, prevents the formation of the nanoislands. In the absence of the carbon layer, the formation of molybdenum grains proceeds both on the top and bottom surfaces of the flake. If carbon is present on both the surfaces then the formation of Mo grains is completely prevented.

  5. Mesoscopic Oxide Double Layer as Electron Specific Contact for Highly Efficient and UV Stable Perovskite Photovoltaics.

    Science.gov (United States)

    Tavakoli, Mohammad Mahdi; Giordano, Fabrizio; Zakeeruddin, Shaik Mohammed; Grätzel, Michael

    2018-04-11

    The solar to electric power conversion efficiency (PCE) of perovskite solar cells (PSCs) has recently reached 22.7%, exceeding that of competing thin film photovoltaics and the market leader polycrystalline silicon. Further augmentation of the PCE toward the Shockley-Queisser limit of 33.5% warrants suppression of radiationless carrier recombination by judicious engineering of the interface between the light harvesting perovskite and the charge carrier extraction layers. Here, we introduce a mesoscopic oxide double layer as electron selective contact consisting of a scaffold of TiO 2 nanoparticles covered by a thin film of SnO 2 , either in amorphous (a-SnO 2 ), crystalline (c-SnO 2 ), or nanocrystalline (quantum dot) form (SnO 2 -NC). We find that the band gap of a-SnO 2 is larger than that of the crystalline (tetragonal) polymorph leading to a corresponding lift in its conduction band edge energy which aligns it perfectly with the conduction band edge of both the triple cation perovskite and the TiO 2 scaffold. This enables very fast electron extraction from the light perovskite, suppressing the notorious hysteresis in the current-voltage ( J-V) curves and retarding nonradiative charge carrier recombination. As a result, we gain a remarkable 170 mV in open circuit photovoltage ( V oc ) by replacing the crystalline SnO 2 by an amorphous phase. Because of the quantum size effect, the band gap of our SnO 2 -NC particles is larger than that of bulk SnO 2 causing their conduction band edge to shift also to a higher energy thereby increasing the V oc . However, for SnO 2 -NC there remains a barrier for electron injection into the TiO 2 scaffold decreasing the fill factor of the device and lowering the PCE. Introducing the a-SnO 2 coated mp-TiO 2 scaffold as electron extraction layer not only increases the V oc and PEC of the solar cells but also render them resistant to UV light which forebodes well for outdoor deployment of these new PSC architectures.

  6. Probing collective oscillation of d-orbital electrons at the nanoscale

    Science.gov (United States)

    Dhall, Rohan; Vigil-Fowler, Derek; Houston Dycus, J.; Kirste, Ronny; Mita, Seiji; Sitar, Zlatko; Collazo, Ramon; LeBeau, James M.

    2018-02-01

    Here, we demonstrate that high energy electrons can be used to explore the collective oscillation of s, p, and d orbital electrons at the nanometer length scale. Using epitaxial AlGaN/AlN quantum wells as a test system, we observe the emergence of additional features in the loss spectrum with the increasing Ga content. A comparison of the observed spectra with ab-initio theory reveals that the origin of these spectral features lies in excitations of 3d-electrons contributed by Ga. We find that these modes differ in energy from the valence electron plasmons in Al1-xGaxN due to the different polarizabilities of the d electrons. Finally, we study the dependence of observed spectral features on the Ga content, lending insights into the origin of these spectral features, and their coupling with electron-hole excitations.

  7. Probing collective oscillation of d -orbital electrons at the nanoscale

    Energy Technology Data Exchange (ETDEWEB)

    Dhall, Rohan [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA; Vigil-Fowler, Derek [National Renewable Energy Laboratory, Golden, Colorado 80401, USA; Houston Dycus, J. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA; Kirste, Ronny [Adroit Materials, Inc., Cary, North Carolina 27518, USA; Mita, Seiji [Adroit Materials, Inc., Cary, North Carolina 27518, USA; Sitar, Zlatko [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA; Collazo, Ramon [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA; LeBeau, James M. [Adroit Materials, Inc., Cary, North Carolina 27518, USA

    2018-02-05

    Here, we demonstrate that high energy electrons can be used to explore the collective oscillation of s, p, and d orbital electrons at the nanometer length scale. Using epitaxial AlGaN/AlN quantum wells as a test system, we observe the emergence of additional features in the loss spectrum with the increasing Ga content. A comparison of the observed spectra with ab-initio theory reveals that the origin of these spectral features lies in excitations of 3d-electrons contributed by Ga. We find that these modes differ in energy from the valence electron plasmons in Al1-xGaxN due to the different polarizabilities of the d electrons. Finally, we study the dependence of observed spectral features on the Ga content, lending insights into the origin of these spectral features, and their coupling with electron-hole excitations.

  8. Resistivity scaling due to electron surface scattering in thin metal layers

    Science.gov (United States)

    Zhou, Tianji; Gall, Daniel

    2018-04-01

    The effect of electron surface scattering on the thickness-dependent electrical resistivity ρ of thin metal layers is investigated using nonequilibrium Green's function density functional transport simulations. Cu(001) thin films with thickness d =1 -2 nm are used as a model system, employing a random one-monolayer-high surface roughness and frozen phonons to cause surface and bulk scattering, respectively. The zero-temperature resistivity increases from 9.7 ±1.0 μ Ω cm at d =1.99 nm to 18.7 ±2.6 μ Ω cm at d =0.9 0 nm, contradicting the asymptotic T =0 prediction from the classical Fuchs-Sondheimer model. At T =9 00 K, ρ =5.8 ±0.1 μ Ω cm for bulk Cu and ρ =13.4 ±1.1 and 22.5 ±2.4 μ Ω cm for layers with d =1.99 and 0.90 nm, respectively, indicating an approximately additive phonon contribution which, however, is smaller than for bulk Cu or atomically smooth layers. The overall data indicate that the resistivity contribution from surface scattering is temperature-independent and proportional to 1 /d , suggesting that it can be described using a surface-scattering mean-free path λs for 2D transport which is channel-independent and proportional to d . Data fitting indicates λs=4 ×d for the particular simulated Cu(001) surfaces with a one-monolayer-high surface roughness. The 1 /d dependence deviates considerably from previous 1 /d2 predictions from quantum models, indicating that the small-roughness approximation in these models is not applicable to very thin (<2 nm) layers, where the surface roughness is a considerable fraction of d .

  9. Enhanced long-distance transport of periodic electron beams in an advanced double layer cone-channel target

    Science.gov (United States)

    Ji, Yanling; Duan, Tao; Zhou, Weimin; Li, Boyuan; Wu, Fengjuan; Zhang, Zhimeng; Ye, Bin; Wang, Rong; Wu, Chunrong; Tang, Yongjian

    2018-02-01

    An enhanced long-distance transport of periodic electron beams in an advanced double layer cone-channel target is investigated using two-dimensional particle-in-cell simulations. The target consists of a cone attached to a double-layer hollow channel with a near-critical-density inner layer. The periodic electron beams are generated by the combination of ponderomotive force and longitudinal laser electric field. Then a stable electron propagation is achieved in the double-layer channel over a much longer distance without evident divergency, compared with a normal cone-channel target. Detailed simulations show that the much better long-distance collimation and guidance of energetic electrons is attributed to the much stronger electromagnetic fields at the inner wall surfaces. Furthermore, a continuous electron acceleration is obtained by the more intense laser electric fields and extended electron acceleration length in the channel. Our investigation shows that by employing this advanced target, both the forward-going electron energy flux in the channel and the energy coupling efficiency from laser to electrons are about threefold increased in comparison with the normal case.

  10. Enhanced long-distance transport of periodic electron beams in an advanced double layer cone-channel target

    Directory of Open Access Journals (Sweden)

    Yanling Ji

    2018-02-01

    Full Text Available An enhanced long-distance transport of periodic electron beams in an advanced double layer cone-channel target is investigated using two-dimensional particle-in-cell simulations. The target consists of a cone attached to a double-layer hollow channel with a near-critical-density inner layer. The periodic electron beams are generated by the combination of ponderomotive force and longitudinal laser electric field. Then a stable electron propagation is achieved in the double-layer channel over a much longer distance without evident divergency, compared with a normal cone-channel target. Detailed simulations show that the much better long-distance collimation and guidance of energetic electrons is attributed to the much stronger electromagnetic fields at the inner wall surfaces. Furthermore, a continuous electron acceleration is obtained by the more intense laser electric fields and extended electron acceleration length in the channel. Our investigation shows that by employing this advanced target, both the forward-going electron energy flux in the channel and the energy coupling efficiency from laser to electrons are about threefold increased in comparison with the normal case.

  11. Electron-hole pairing and anomalous properties of layered high-Tc compounds

    International Nuclear Information System (INIS)

    Efetov, K.B.

    1991-01-01

    Band-structure pictures for layered high-T c materials available in the literature show that, besides the dispersive broad band responsible for metallic properties, there are at least two additional bands having minima and maxima near the Fermi surface. These additional bands belong to different planes (for example, CuO planes and BiO planes in Bi 2 Sr 2 CaCu 2 O 8 ) or to planes and chains (in YBa 2 Cu 3 O 7 ). Provided the Coulomb repulsion is not very weak, pairing of electrons and holes belonging to these additional bands in different planes or planes and chains is possible. It is shown that, if this possibility is realized, a transition in the additional bands into a state of an excitonic dielectric occurs. The spin of an electron-hole pair can be both 0 and 1. Due to the fact that the electron and the hole of the pair belong to different planes, there are no charge- or spin-density waves. This excitonic insulator can serve as a polarizing substance and give a strong attraction between electrons of the metallic band even if the bare interaction is repulsive. It is also shown that some interesting gapless excitations exist. Provided there are impurities in the system that scatter from plane to plane, these excitations are coupled to the electrons of the metallic band. This effective interaction can be described in terms of an effective mode P(ω) with ImP(ω)∼-sgnω. As a result, one can obtain such properties of the normal state as a linear dependence of the resistivity on temperature, linear dependence of the density of states on energy, constant background in the Raman-scattering intensity, large nuclear relaxation rate, etc., which are very well known from experiments

  12. The intriguing electronic and optical properties modulation of hydrogen and fluorine codecorated silicene layers

    International Nuclear Information System (INIS)

    Yang, Qun; Tan, Chunjian; Meng, Ruishen; Jiang, Junke; Liang, Qiuhua; Sun, Xiang; Yang, Daoguo; Chen, Xianping

    2017-01-01

    Highlights: • The HSiF bilayer is very stable due to the high binding energy even larger than the ones of bilayer graphene. • The HSiF bilayer exhibits a moderate direct band gap of 0.296 eV much lower than that of HSiF monolayer. • All the HSiF layers have a direct band gap nature, irrespective of stacking pattern, thickness and external electric fields, which is an advantage over MoS 2 layers. Besides, it is advantageous to the application of HSiF layers in the field of optical devices. • The external electric field can effectively tune the band gaps of HSiF layers. Especially, even a semiconductor–metal transition occurs. • After the formation of HSiF bilayer, the complete electron-hole separation enhances the photocatalytic efficiency of HSiF bilayer and it exhibits a significantly improved visible light adsorption peak. - Abstract: First-principles calculations based on density-functional theory reveal some superior physical properties of hydrogen and fluorine co-decorated silicene (HSiF) monolayer and bilayer. Our simulated results reveal that the HSiF monolayer is a large direct band gap semiconductor greatly differing from the gapless semi-metallic silicene. There exists strong interlayer coupling in HSiF bilayer, leading to the good stabilities of HSiF bilayer even beyond bilayer graphene. The proposed HSiF bilayer exhibits a moderate direct band gap of 0.296 eV which is much lower than that of HSiF monolayer. Encouragingly, HSiF layers all have a direct band gap nature, irrespective of stacking pattern, thickness and external electric fields, which is an advantage over MoS 2 layers. Furthermore, an out-of-plane electric field has an evident impact on the band structures of the HSiF monolayer and bilayer. Especially, the band gap of HSiF bilayer can be effectively tuned by external electric field, even a semiconductor–metal transition occurs. More importantly, the HSiF bilayer exhibits a significant improved visible light adsorption peak with

  13. The intriguing electronic and optical properties modulation of hydrogen and fluorine codecorated silicene layers

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Qun; Tan, Chunjian [Faculty of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, 541004 Guilin (China); Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, Chongqing University and College of Opto-Electronic Engineering, Chongqing University, 400044 Chongqing (China); Meng, Ruishen; Jiang, Junke; Liang, Qiuhua; Sun, Xiang [Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, Chongqing University and College of Opto-Electronic Engineering, Chongqing University, 400044 Chongqing (China); Yang, Daoguo [Faculty of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, 541004 Guilin (China); Chen, Xianping, E-mail: xianpingchen@cqu.edu.cn [Faculty of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, 541004 Guilin (China); Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, Chongqing University and College of Opto-Electronic Engineering, Chongqing University, 400044 Chongqing (China)

    2017-03-15

    Highlights: • The HSiF bilayer is very stable due to the high binding energy even larger than the ones of bilayer graphene. • The HSiF bilayer exhibits a moderate direct band gap of 0.296 eV much lower than that of HSiF monolayer. • All the HSiF layers have a direct band gap nature, irrespective of stacking pattern, thickness and external electric fields, which is an advantage over MoS{sub 2} layers. Besides, it is advantageous to the application of HSiF layers in the field of optical devices. • The external electric field can effectively tune the band gaps of HSiF layers. Especially, even a semiconductor–metal transition occurs. • After the formation of HSiF bilayer, the complete electron-hole separation enhances the photocatalytic efficiency of HSiF bilayer and it exhibits a significantly improved visible light adsorption peak. - Abstract: First-principles calculations based on density-functional theory reveal some superior physical properties of hydrogen and fluorine co-decorated silicene (HSiF) monolayer and bilayer. Our simulated results reveal that the HSiF monolayer is a large direct band gap semiconductor greatly differing from the gapless semi-metallic silicene. There exists strong interlayer coupling in HSiF bilayer, leading to the good stabilities of HSiF bilayer even beyond bilayer graphene. The proposed HSiF bilayer exhibits a moderate direct band gap of 0.296 eV which is much lower than that of HSiF monolayer. Encouragingly, HSiF layers all have a direct band gap nature, irrespective of stacking pattern, thickness and external electric fields, which is an advantage over MoS{sub 2} layers. Furthermore, an out-of-plane electric field has an evident impact on the band structures of the HSiF monolayer and bilayer. Especially, the band gap of HSiF bilayer can be effectively tuned by external electric field, even a semiconductor–metal transition occurs. More importantly, the HSiF bilayer exhibits a significant improved visible light adsorption

  14. Two-dimensional collective electron magnetotransport, oscillations, and chaos in a semiconductor superlattice

    Science.gov (United States)

    Bonilla, L. L.; Carretero, M.; Segura, A.

    2017-12-01

    When quantized, traces of classically chaotic single-particle systems include eigenvalue statistics and scars in eigenfuntions. Since 2001, many theoretical and experimental works have argued that classically chaotic single-electron dynamics influences and controls collective electron transport. For transport in semiconductor superlattices under tilted magnetic and electric fields, these theories rely on a reduction to a one-dimensional self-consistent drift model. A two-dimensional theory based on self-consistent Boltzmann transport does not support that single-electron chaos influences collective transport. This theory agrees with existing experimental evidence of current self-oscillations, predicts spontaneous collective chaos via a period doubling scenario, and could be tested unambiguously by measuring the electric potential inside the superlattice under a tilted magnetic field.

  15. Two-dimensional collective electron magnetotransport, oscillations, and chaos in a semiconductor superlattice.

    Science.gov (United States)

    Bonilla, L L; Carretero, M; Segura, A

    2017-12-01

    When quantized, traces of classically chaotic single-particle systems include eigenvalue statistics and scars in eigenfuntions. Since 2001, many theoretical and experimental works have argued that classically chaotic single-electron dynamics influences and controls collective electron transport. For transport in semiconductor superlattices under tilted magnetic and electric fields, these theories rely on a reduction to a one-dimensional self-consistent drift model. A two-dimensional theory based on self-consistent Boltzmann transport does not support that single-electron chaos influences collective transport. This theory agrees with existing experimental evidence of current self-oscillations, predicts spontaneous collective chaos via a period doubling scenario, and could be tested unambiguously by measuring the electric potential inside the superlattice under a tilted magnetic field.

  16. Collective acceleration of electrons and ions in a high current relativistic electron beam. Final report

    International Nuclear Information System (INIS)

    Nation, J.A.

    1992-01-01

    This report describes work carried out on DOE contract number DE-AC02-80ER10569 during the period December 15, 1979 to May 31, 1992. The original purpose of this research was to investigate the use of slow space charge waves on weakly relativistic electron beams for ion acceleration. The work had three major objectives: development of a suitable ion injector, growth and study of the properties of slow space charge waves on an electron beam, and a combination of the two components into a suitable proof-of-principle demonstration of the wave accelerator. Work focused on the first two of these objectives. Control of the space charge waves' phase velocity was not obtained to the degree required for a working accelerator, so the project was duly terminated in favor of a program which focused on generating ultra high power microwave signals suitable for use in the next linear collider. Work done to develop suitable efficient, inexpensive, phase-stable microwave sources, with peak powers of up to 1 GW in the X band in pulses shorter than 1 ns, is described. Included are lists of the journal and conference papers resulting from this work, as well as a list of graduate students who completed their Ph.D. studies on the projects described in this report

  17. The influence of residents' behaviour on waste electrical and electronic equipment collection effectiveness.

    Science.gov (United States)

    Nowakowski, Piotr

    2016-11-01

    Government agencies have implemented regulations to reduce the volume of waste electrical and electronic equipment to protect the environment and encourage recycling. The effectiveness of systems through which waste electrical and electronic equipment is collected and recycled depends on (a) the development and operation of new programmes to process this material and (b) on information dissemination programmes aimed at manufacturers, retail sellers, and the consuming public. This study analyses these two elements. The main focus is to better understand household residents' behaviour in regards to the proper methods of handling waste electrical and electronic equipment and possible storage of the obsolete equipment that brings disturbances with collection of the waste equipment. The study explores these issues depending on size of municipality and the household residents' knowledge about legal methods of post-consumer management of waste electrical and electronic equipment in Poland, where the collection rate of that type of waste is about 40% of the total mass of waste electrical and electronic equipment appearing in the market.The research was informed by various sources of information, including non-government organisations, Inspectorate of Environmental Protection and Central Statistics Office in Poland, questionnaires, and interviews with the household residents. The questionnaires were distributed to daytime and vocational students from different universities and the customers of an electronic equipment superstore. The results show that a resident's behaviour in regards to the handling of obsolete waste electrical and electronic equipment can significantly reduce the collection rate, especially when the waste is discarded improperly - mixed with municipal waste or sold in scrapyards. It is possible to identify points that are necessary to be improved to achieve a higher collection rate. © The Author(s) 2016.

  18. Exploring the Roles of Intermediaries in Collective Memory-Supported Electronic Negotiation: A Theoretical Framework

    OpenAIRE

    Nongkran Lertpittayapoom; Souren Paul

    2006-01-01

    Following the emergence of the Internet, electronic negotiation has become an alternative to face-to-face negotiation. The current forms of negotiation support systems (NSS) used to support many electronic negotiations offer very little support for historical negotiation data. In order to address this issue, the idea of a collective memory support in negotiations has been proposed in recent years. This article highlights the use of an online intermediary as an effective location from which co...

  19. High-efficiency green phosphorescent organic light-emitting diodes with double-emission layer and thick N-doped electron transport layer

    Energy Technology Data Exchange (ETDEWEB)

    Nobuki, Shunichiro, E-mail: shunichiro.nobuki.nb@hitachi.com [Hitachi Research Laboratory, Hitachi Ltd., 7-1-1 Omika-cho, Hitachi-city, Ibaraki 319-1292 (Japan); Wakana, Hironori; Ishihara, Shingo [Hitachi Research Laboratory, Hitachi Ltd., 7-1-1 Omika-cho, Hitachi-city, Ibaraki 319-1292 (Japan); Mikami, Akiyoshi [Dept. of Electrical Engineering, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichimachi, Ishikawa 921-8501 (Japan)

    2014-03-03

    We have developed green phosphorescent organic light-emitting diodes (OLEDs) with high external quantum efficiency of 59.7% and power efficiency of 243 lm/W at 2.73 V at 0.053 mA/cm{sup 2}. A double emission layer and a thick n-doped electron transport layer were adopted to improve the exciton recombination factor. A high refractive index hemispherical lens was attached to a high refractive index substrate for extracting light trapped inside the substrate and the multiple-layers of OLEDs to air. Additionally, we analyzed an energy loss mechanism to clarify room for the improvement of our OLEDs including the charge balance factor. - Highlights: • We developed high efficiency green phosphorescent organic light-emitting diode (OLED). • Our OLED had external quantum efficiency of 59.7% and power efficiency of 243 lm/W. • A double emission layer and thick n-doped electron transport layer were adopted. • High refractive index media (hemispherical lens and substrate) were also used. • We analyzed an energy loss mechanism to clarify the charge balance factor of our OLED.

  20. X-ray and scanning electron microscopic investigation of porous silicon and silicon epitaxial layers grown on porous silicon

    International Nuclear Information System (INIS)

    Wierzchowski, W.; Pawlowska, M.; Nossarzewska-Orlowska, E.; Brzozowski, A.; Wieteska, K.; Graeff, W.

    1998-01-01

    The 1 to 5 μm thick layers of porous silicon and epitaxial layers grown on porous silicon were studied by means of X-ray diffraction methods, realised with a wide use of synchrotron source and scanning microscopy. The results of x-ray investigation pointed the difference of lateral periodicity between the porous layer and the substrate. It was also found that the deposition of epitaxial layer considerably reduced the coherence of porous fragments. A number of interface phenomena was also observed in section and plane wave topographs. The scanning electron microscopic investigation of cleavage faces enabled direct evaluation of porous layer thickness and revealed some details of their morphology. The scanning observation of etched surfaces of epitaxial layers deposited on porous silicon revealed dislocations and other defects not reasonable in the X-ray topographs. (author)

  1. Selected methods of electron-and ion-diagnostics in tokamak scrape-off-layer

    Directory of Open Access Journals (Sweden)

    Sadowski Marek J.

    2015-06-01

    Full Text Available This invited paper considers reasons why exact measurements of fast electron and ion losses in tokamaks, and particularly i n a scrape-off-layer and near a divertor region, are necessary in order to master nuclear fusion energy production. Attention is also paid to direct measurements of escaping fusion products from D-D and D-T reactions, and in particular of fast alphas which might be used for plasma heating. The second part describes the generation of so-called runaway and ripple-born electrons which might induce high energy losses and cause severe damages of internal walls in fusion facilities. Advantages and disadvantages of different diagnostic methods applied for studies of such fast electrons are discussed. Particular attention is paid to development of a direct measuring technique based on the Cherenkov effect which might be induced by fast electrons in appropriate radiators. There are presented various versions of Cherenkov-type probes which have been developed by the NCBJ team and applied in different tokamak experiments. The third part is devoted to direct measurements of fast ions (including those produced by the nuclear fusion reactions which can escape from a high-temperature plasma region. Investigation of fast fusion-produced protons from tokamak discharges is reported. New ion probes, which were developed by the NCBJ team, are also presented. For the first time there is given a detailed description of an ion pinhole camera, which enables irradiation of several nuclear track detectors during a single tokamak discharge, and a miniature Thomson-type mass-spectrometer, which can be used for ion measurements at plasma borders.

  2. Electron Beam Evaporated TiO2 Layer for High Efficiency Planar Perovskite Solar Cells on Flexible Polyethylene Terephthalate Substrates

    KAUST Repository

    Qiu, Weiming

    2015-09-30

    The TiO2 layer made by electron beam (e-beam) induced evaporation is demonstrated as electron transport layer (ETL) in high efficiency planar junction perovskite solar cells. The temperature of the substrate and the thickness of the TiO2 layer can be easily controlled with this e-beam induced evaporation method, which enables the usage of different types of substrates. Here, Perovskite solar cells based on CH3NH3PbI3-xClx achieve power conversion efficiencies of 14.6% on glass and 13.5% on flexible plastic substrates. The relationship between the TiO2 layer thickness and the perovskite morphology is studied with scanning electron microscope (SEM), atomic force microscope (AFM), and X-ray photoelectron spectroscopy (XPS). Our results indicate that pinholes in thin TiO2 layer lead to pinholes in the perovskite layer. By optimizing the TiO2 thickness, perovskite layers with substantially increased surface coverage and reduced pinhole areas are fabricated, increasing overall device performance.

  3. Ab initio electronic band structure study of III-VI layered semiconductors

    Science.gov (United States)

    Olguín, Daniel; Rubio-Ponce, Alberto; Cantarero, Andrés

    2013-08-01

    We present a total energy study of the electronic properties of the rhombohedral γ-InSe, hexagonal ɛ-GaSe, and monoclinic GaTe layered compounds. The calculations have been done using the full potential linear augmented plane wave method, including spin-orbit interaction. The calculated valence bands of the three compounds compare well with angle resolved photoemission measurements and a discussion of the small discrepancies found has been given. The present calculations are also compared with recent and previous band structure calculations available in the literature for the three compounds. Finally, in order to improve the calculated band gap value we have used the recently proposed modified Becke-Johnson correction for the exchange-correlation potential.

  4. Inductive crystal field control in layered metal oxides with correlated electrons

    International Nuclear Information System (INIS)

    Balachandran, P. V.; Cammarata, A.; Rondinelli, J. M.; Nelson-Cheeseman, B. B.; Bhattacharya, A.

    2014-01-01

    We show that the NiO 6 crystal field energies can be tailored indirectly via heterovalent A cation ordering in layered (La,A)NiO 4 Ruddlesden–Popper (RP) oxides, where A = Sr, Ca, or Ba, using density functional calculations. We leverage as a driving force the electrostatic interactions between charged [LaO] 1+ and neutral [AO] 0 planes to inductively tune the Ni–O bond distortions, without intentional doping or epitaxial strain, altering the correlated d-orbital energies. We use this strategy to design cation ordered LaCaNiO 4 and LaBaNiO 4 with distortions favoring enhanced Ni e g orbital polarization, and find local electronic structure signatures analogous to those in RP La-cuprates, i.e., parent phases of the high-temperature superconducting oxides

  5. Tuning the properties of an MgO layer for spin-polarized electron transport

    Science.gov (United States)

    Zhao, Chong-Jun; Ding, Lei; Zhao, Zhi-Duo; Zhang, Peng; Cao, Xing-Zhong; Wang, Bao-Yi; Zhang, Jing-Yan; Yu, Guang-Hua

    2014-08-01

    The influence of substrate temperature and annealing on quality/microstructural evolution of MgO, as well as the resultant magnetoresistance (MR) ratio, has been investigated. It has been found that the crystallinity of MgO in the MgO/NiFe/MgO heterostructures gradually improves with increasing substrate temperature. This behavior facilitates the transport of spin-polarized electrons, resulting in a high MR value. After annealing, the formation of vacancy clusters in MgO layers observed through positron annihilation spectroscopy leads to an increase in MR at different levels because of the crystallinity improvement of MgO. However, these vacancy clusters as another important defect can limit further improvement in MR.

  6. Laser Structuring of Thin Layers for Flexible Electronics by a Shock Wave-induced Delamination Process

    Science.gov (United States)

    Lorenz, Pierre; Ehrhardt, Martin; Zimmer, Klaus

    The defect-free laser-assisted structuring of thin films on flexible substrates is a challenge for laser methods. However, solving this problem exhibits an outstanding potential for a pioneering development of flexible electronics. Thereby, the laser-assisted delamination method has a great application potential. At the delamination process: the localized removal of the layer is induced by a shock wave which is produced by a laser ablation process on the rear side of the substrate. In this study, the thin-film patterning process is investigated for different polymer substrates dependent on the material and laser parameters using a KrF excimer laser. The resultant structures were studied by optical microscopy and white light interferometry (WLI). The delamination process was tested at different samples (indium tin oxide (ITO) on polyethylene terephthalate (PET), epoxy-based negative photoresist (SU8) on polyimide (PI) and indium tin oxide/copper indium gallium selenide/molybdenum (ITO/CIGS/Mo) on PI.

  7. Inductive crystal field control in layered metal oxides with correlated electrons

    Energy Technology Data Exchange (ETDEWEB)

    Balachandran, P. V.; Cammarata, A.; Rondinelli, J. M., E-mail: jrondinelli@nortwestern.edu [Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104 (United States); Nelson-Cheeseman, B. B. [School of Engineering, University of St. Thomas, St. Paul, Minnesota 55105 (United States); Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Bhattacharya, A. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

    2014-07-01

    We show that the NiO{sub 6} crystal field energies can be tailored indirectly via heterovalent A cation ordering in layered (La,A)NiO{sub 4} Ruddlesden–Popper (RP) oxides, where A = Sr, Ca, or Ba, using density functional calculations. We leverage as a driving force the electrostatic interactions between charged [LaO]{sup 1+} and neutral [AO]{sup 0} planes to inductively tune the Ni–O bond distortions, without intentional doping or epitaxial strain, altering the correlated d-orbital energies. We use this strategy to design cation ordered LaCaNiO{sub 4} and LaBaNiO{sub 4} with distortions favoring enhanced Ni e{sub g} orbital polarization, and find local electronic structure signatures analogous to those in RP La-cuprates, i.e., parent phases of the high-temperature superconducting oxides.

  8. Electronic transport and dielectric properties of low-dimensional structures of layered transition metal dichalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Ashok, E-mail: ashok.1777@yahoo.com; Ahluwalia, P.K., E-mail: pk_ahluwalia7@yahoo.com

    2014-02-25

    Graphical abstract: We present electronic transport and dielectric response of layered transition metal dichalcogenides nanowires and nanoribbons. Illustration 1: Conductance (G) and corresponding local density of states(LDOS) for LTMDs wires at applied bias. I–V characterstics are shown in lowermost panels. Highlights: • The studied configurations show metallic/semiconducting nature. • States around the Fermi energy are mainly contributed by the d orbitals of metal atoms. • The studied configurations show non-linear current–voltage (I–V) characteristics. • Additional plasmonic features at low energy have been observed for both wires and ribbons. • Dielectric functions for both wires and ribbons are anisotropic (isotropic) at low (high) energy range. -- Abstract: We present first principle study of the electronic transport and dielectric properties of nanowires and nanoribbons of layered transition metal dichalcogenides (LTMDs), MX{sub 2} (M = Mo, W; X = S, Se, Te). The studied configuration shows metallic/semiconducting nature and the states around the Fermi energy are mainly contributed by the d orbitals of metal atoms. Zero-bias transmission show 1G{sub 0} conductance for the ribbons of MoS{sub 2} and WS{sub 2}; 2G{sub 0} conductance for MoS{sub 2}, WS{sub 2}, WSe{sub 2} wires, and ribbons of MoTe{sub 2} and WTe{sub 2}; and 3G{sub 0} conductance for WSe{sub 2} ribbon. The studied configurations show non-linear current–voltage (I–V) characteristics. Negative differential conductance (NDC) has also been observed for the nanoribbons of the selenides and tellurides of both Mo and W. Furthermore, additional plasmonic features below 5 eV energy have been observed for both wires and ribbons as compared to the corresponding monolayers, which is found to be red-shifted on going from nanowires to nanoribbons.

  9. Roll-to-roll atomic layer deposition process for flexible electronics encapsulation applications

    International Nuclear Information System (INIS)

    Maydannik, Philipp S.; Kääriäinen, Tommi O.; Lahtinen, Kimmo; Cameron, David C.; Söderlund, Mikko; Soininen, Pekka; Johansson, Petri; Kuusipalo, Jurkka; Moro, Lorenza; Zeng, Xianghui

    2014-01-01

    At present flexible electronic devices are under extensive development and, among them, flexible organic light-emitting diode displays are the closest to a large market deployment. One of the remaining unsolved challenges is high throughput production of impermeable flexible transparent barrier layers that protect sensitive light-emitting materials against ambient moisture. The present studies deal with the adaptation of the atomic layer deposition (ALD) process to high-throughput roll-to-roll production using the spatial ALD concept. We report the development of such a process for the deposition of 20 nm thickness Al 2 O 3 diffusion barrier layers on 500 mm wide polymer webs. The process uses trimethylaluminum and water as precursors at a substrate temperature of 105 °C. The observation of self-limiting film growth behavior and uniformity of thickness confirms the ALD growth mechanism. Water vapor transmission rates for 20 nm Al 2 O 3 films deposited on polyethylene naphthalate (PEN) substrates were measured as a function of substrate residence time, that is, time of exposure of the substrate to one precursor zone. Moisture permeation levels measured at 38 °C/90% relative humidity by coulometric isostatic–isobaric method were below the detection limit of the instrument ( −4  g/m 2 day) for films coated at web moving speed of 0.25 m/min. Measurements using the Ca test indicated water vapor transmission rates ∼5 × 10 −6 g/m 2 day. Optical measurements on the coated web showed minimum transmission of 80% in the visible range that is the same as the original PEN substrate

  10. Roll-to-roll atomic layer deposition process for flexible electronics encapsulation applications

    Energy Technology Data Exchange (ETDEWEB)

    Maydannik, Philipp S., E-mail: philipp.maydannik@lut.fi; Kääriäinen, Tommi O.; Lahtinen, Kimmo; Cameron, David C. [Advanced Surface Technology Research Laboratory, Lappeenranta University of Technology, Sammonkatu 12, 50130 Mikkeli (Finland); Söderlund, Mikko; Soininen, Pekka [Beneq Oy, P.O. Box 262, 01511 Vantaa (Finland); Johansson, Petri; Kuusipalo, Jurkka [Tampere University of Technology, Paper Converting and Packaging Technology, P.O. Box 589, 33101 Tampere (Finland); Moro, Lorenza; Zeng, Xianghui [Samsung Cheil Industries, San Jose R and D Center, 2186 Bering Drive, San Jose, California 95131 (United States)

    2014-09-01

    At present flexible electronic devices are under extensive development and, among them, flexible organic light-emitting diode displays are the closest to a large market deployment. One of the remaining unsolved challenges is high throughput production of impermeable flexible transparent barrier layers that protect sensitive light-emitting materials against ambient moisture. The present studies deal with the adaptation of the atomic layer deposition (ALD) process to high-throughput roll-to-roll production using the spatial ALD concept. We report the development of such a process for the deposition of 20 nm thickness Al{sub 2}O{sub 3} diffusion barrier layers on 500 mm wide polymer webs. The process uses trimethylaluminum and water as precursors at a substrate temperature of 105 °C. The observation of self-limiting film growth behavior and uniformity of thickness confirms the ALD growth mechanism. Water vapor transmission rates for 20 nm Al{sub 2}O{sub 3} films deposited on polyethylene naphthalate (PEN) substrates were measured as a function of substrate residence time, that is, time of exposure of the substrate to one precursor zone. Moisture permeation levels measured at 38 °C/90% relative humidity by coulometric isostatic–isobaric method were below the detection limit of the instrument (<5 × 10{sup −4} g/m{sup 2} day) for films coated at web moving speed of 0.25 m/min. Measurements using the Ca test indicated water vapor transmission rates ∼5 × 10{sup −6} g/m{sup 2} day. Optical measurements on the coated web showed minimum transmission of 80% in the visible range that is the same as the original PEN substrate.

  11. Investigation of organic light-emitting diodes with novel organic electron injection layers

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Sunae; Sethuraman, Kunjithapatham; An, Jongdeok; Im, Chan [Konkuk University, Seoul (Korea, Republic of); Hwang, Boseon [Jinwoong Industrial Co. Ltd., Seoul (Korea, Republic of)

    2012-03-15

    1-(diphenyl-phosphinoyl)-4-(2,2-diphenyl-vinyl)-benzene (DpDvB) and 4-(diphenyl-phosphinoyl)-4'-(2,2-diphenyl-vinyl)-biphenyl (DpDvBp) have been prepared and used as efficient electron injection layers (EILs) between aluminum cathode and tris (8-hydroxyquinoline) aluminum organic light emitting diodes (OLED). The performances of devices with different thicknesses of DpDvB and DpDvBp were investigated. Experimental results show that the turn-on voltage of the devices was decreased and the luminance of the devices was enhanced with increasing thickness of the EILs. Power efficiencies of 1.07 lm/W and 0.97 lm/W were obtained by inserting a 3-nm-thick EIL of DpDvB and a 5 nm thick EIL of DpDvBp, respectively. These efficiencies are comparable to that of the device using LiF as an EIL. The results prove that DpDvB and DpDvBp layers are also suitable for efficient EILs in OLEDs.

  12. Contribution of electron microscopy to the study of alteration layers formed on the surface of glasses

    International Nuclear Information System (INIS)

    Crovisier, J.L.; Eberhart, J.P.

    1985-01-01

    In order to understand the whole process of glass corrosion in aqueous solutions, the analysis of the reagent must be completed by a study of the actual alteration layers on the glass surface. Transmission electron microscopy on ultramicrotomic thin sections turns out to be a most suitable tool to achieve this. It enables to supplement the conventional methods of surface investigation, such as A.E.S., ESCA, IRRS, SIMS. Two examples are given. The first deals with a (SiO 2 -CaO-Na 2 O-P 2 O 5 )- glass leached in a buffer solution of tris-hydromethyl-aminomethane at 40 0 C. The major feature is ion exchange within a residual porous glass, followed by the precipitation of hydroxyapatite. In the second example, a basaltic glass is altered in sea-water at 50 0 C. The glass constituents are dissolved simultaneously and the alteration layer is a precipitate of crystalline and amorphous phases which have reached their saturation level [fr

  13. Towards molecular doping effect on the electronic properties of two-dimensional layered materials

    International Nuclear Information System (INIS)

    Arramel; Wang, Q.; Zheng, Y.; Zhang, W.; Wee, A. T. S.

    2016-01-01

    In recent advancements of an atomically-thick, flat, and flexible two-dimensional (2D) material has attracted tremendous interest. Graphene and 2D layered semiconductors such as transition-metal dichalcogenides (TMDs) pave the way on the exploration of their unique layer-number dependent electronic and optical properties. The latter have a promising future on the microelectronics due to their sizeable bandgaps, i.e., the crossover from indirect-direct bandgap transition occurs as the thickness of TMDs is decreased to a monolayer. In this work, we systematically investigated the optimum growth parameter of chemical vapor deposition of MoS2 and WSe2, respectively. It turns out that the temperature and the duration growth plays role to produce a large area of TMDs monolayers. Our studies suggest that a well-controlled high quality of TMDs could serves as template and interlayer in the TMD-organic heterointerfaces. Thus it is potentially an attractive approach towards a wide-ranging application in optoelectronics, nanoelectronics and energy-harvesting applications. (paper)

  14. Three-dimensional rotation electron diffraction: software RED for automated data collection and data processing.

    Science.gov (United States)

    Wan, Wei; Sun, Junliang; Su, Jie; Hovmöller, Sven; Zou, Xiaodong

    2013-12-01

    Implementation of a computer program package for automated collection and processing of rotation electron diffraction (RED) data is described. The software package contains two computer programs: RED data collection and RED data processing. The RED data collection program controls the transmission electron microscope and the camera. Electron beam tilts at a fine step (0.05-0.20°) are combined with goniometer tilts at a coarse step (2.0-3.0°) around a common tilt axis, which allows a fine relative tilt to be achieved between the electron beam and the crystal in a large tilt range. An electron diffraction (ED) frame is collected at each combination of beam tilt and goniometer tilt. The RED data processing program processes three-dimensional ED data generated by the RED data collection program or by other approaches. It includes shift correction of the ED frames, peak hunting for diffraction spots in individual ED frames and identification of these diffraction spots as reflections in three dimensions. Unit-cell parameters are determined from the positions of reflections in three-dimensional reciprocal space. All reflections are indexed, and finally a list with hkl indices and intensities is output. The data processing program also includes a visualizer to view and analyse three-dimensional reciprocal lattices reconstructed from the ED frames. Details of the implementation are described. Data collection and data processing with the software RED are demonstrated using a calcined zeolite sample, silicalite-1. The structure of the calcined silicalite-1, with 72 unique atoms, could be solved from the RED data by routine direct methods.

  15. Electron injection mechanisms of green organic light-emitting devices fabricated utilizing a double electron injection layer consisting of cesium carbonate and fullerene

    International Nuclear Information System (INIS)

    Yang, J.S.; Choo, D.C.; Kim, T.W.; Jin, Y.Y.; Seo, J.H.; Kim, Y.K.

    2010-01-01

    Electron injection mechanisms of the luminance efficiency of green organic light-emitting devices (OLEDs) fabricated utilizing a cesium carbonate (Cs 2 CO 3 )/fullerene (C 60 ) heterostructure acting as an electron injection layer (EIL) were investigated. Current density-voltage and luminance-voltage measurements showed that the current densities and the luminances of the OLEDs with a Cs 2 CO 3 or Cs 2 CO 3 /C 60 EIL were higher than that of the OLEDs with a Liq EIL. The luminance efficiency of the OLEDs with a Cs 2 CO 3 EIL was almost three times higher than that of the OLEDs with a Liq EIL. Because the electron injection efficiency of the Cs 2 CO 3 layer in OLEDs was different from that of the C 60 layer, the luminance efficiency of the OLEDs with a double EIL consisting of a Cs 2 CO 3 layer and a C 60 layer was smaller than that of the OLEDs with a Cs 2 CO 3 EIL. The electron injection mechanisms of OLEDs with a Cs 2 CO 3 and C 60 double EIL are described on the basis of the experimental results.

  16. Magnetooptic effects and Auger electron spectroscopy of two-layer NiFe-Dy and Fe-Dy films with nonuniform layers

    International Nuclear Information System (INIS)

    Ehdel'man, I.S.; Markov, V.V.; Khudyakov, A.E.; Ivantsov, R.D.; Bondarenko, G.V.; Ovchinnikov, S.G.; Kesler, V.G.; Parshin, A.S.; Ronzhin, I.P.

    2001-01-01

    Magneto-optical effects (magnetic circular dichroism and meridional Kerr effect) and element distribution with layer thickness in two-layer NiFe-Dy and Fe-Dy films, prepared by thermal sputtering of component in ultrahigh vacuum, are investigated. It is shown, that Dy in a two-layer film in the temperature range of 80-300 K makes constant contributions to both effects investigated which are approximately equal to the values of the effects observed in an isolated Dy film only at temperatures below the temperature T c of Dy transition into a ferromagnetic state (T c ∼ 100 K for the films under study). This behaviour of magneto-optical effects is assumed to be due to the influence of a NiFe layer spin system on magnetic state of a Dy layer, this influence is enhanced by the deep penetration of Ni and Fe ions into Dy layer as it follows from the data obtained using Auger electron spectroscopy [ru

  17. Improved efficiency of NiOx-based p-i-n perovskite solar cells by using PTEG-1 as electron transport layer

    NARCIS (Netherlands)

    Groeneveld, Bart G. H. M.; Najafi, Mehrdad; Steensma, Bauke; Adjokatse, Sampson; Fang, Hong-Hua; Jahani, Fatemeh; Qiu, Li; ten Brink, Gert H.; Hummelen, Jan C.; Loi, Maria Antonietta

    We present efficient p-i-n type perovskite solar cells using NiOx as the hole transport layer and a fulleropyrrolidine with a triethylene glycol monoethyl ether side chain (PTEG-1) as electron transport layer. This electron transport layer leads to higher power conversion efficiencies compared to

  18. 77 FR 1777 - 60-Day Notice of Proposed Information Collection: DS-260, Electronic Application for Immigration...

    Science.gov (United States)

    2012-01-11

    ... DEPARTMENT OF STATE [Public Notice: 7750] 60-Day Notice of Proposed Information Collection: DS-260, Electronic Application for Immigration Visa and Alien Registration, 1405-0185 ACTION: Notice of request for... for Immigration Visa and Alien Registration. OMB Control Number: 1405-0185. Type of Request: Extension...

  19. Wetting layer effect on impurity-related electronic properties of different (In,Ga)N QD-shapes

    Science.gov (United States)

    El Ghazi, Haddou; Jorio, Anouar; Zorkani, Izeddine; Feddi, El Mustapha; El Mouchtachi, Ahmed

    2018-05-01

    In this paper, we have investigated the electronic properties of (In,Ga)N/GaN coupled wetting layer-quantum dot system using the numerical approach. The finite element method code is used to solve the Schrödinger equation, in the presence of the impurity. In our model, parallelepiped-shape, circular and square based-pyramidal and their wetting layers embedded in GaN matrix were considered. Based on the single band parabolic and the effective mass approximations, the envelop function and its corresponding energy eigenvalue are obtained assuming a finite potential barrier. Our results reveal that: (1) the wetting layer has a great influence on the electronic properties especially for a small quantum dot and acts in the opposite sense of the geometrical confinement, (2) a wetting layer-dependent critical QD-size is obtained limiting two different behaviors and (3) its effect is strongly-dependent on the quantum dot-shape.

  20. Enhancing Carrier Injection Using Graded Superlattice Electron Blocking Layer for UVB Light-Emitting Diodes

    KAUST Repository

    Janjua, Bilal

    2014-12-01

    We have studied enhanced carrier injection by having an electron blocking layer (EBL) based on a graded superlattice (SL) design. Here, we examine, using a selfconsistent 6 × 6 k.p method, the energy band alignment diagrams under equilibrium and forward bias conditions while also considering carrier distribution and recombination rates (Shockley-Read-Hall, Auger, and radiative recombination rates). The graded SL is based on AlxGa1-xN (larger bandgap) Al0:5Ga0:5N (smaller bandgap) SL, where x is changed from 0.8 to 0.56 in steps of 0.06. Graded SL was found to be effective in reducing electron leakage and enhancing hole injection into the active region. Due to our band engineering scheme for EBL, four orders-of-magnitude enhancement were observed in the direct recombination rate, as compared with the conventional bulk EBL consisting of Al0:8Ga0:2N. An increase in the spatial overlap of carrier wavefunction was obtained due to polarization-induced band bending in the active region. An efficient single quantum-well ultraviolet-B light-emitting diode was designed, which emits at 280 nm. This is the effective wavelength for water disinfection application, among others.

  1. Comparison of Electronic Structure and Magnetic Properties of Few Layer Graphene and Multiwall Carbon Nanotubes

    Directory of Open Access Journals (Sweden)

    Sekhar Chandra Ray

    2016-01-01

    Full Text Available A comparative study has been made for the non-catalyst based few layer graphene (FLG and Fe-catalyst based multiwall carbon nanotubes (MWCNTs. Magnetic and electronic properties of FLG and MWCNTs were studied using magnetic M-H hysteresis loops and synchrotron radiation based X-ray absorption fine structure spectroscopy measurements. Structural defects and electronic and bonding properties of FLG/MWCNTs have been studied using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS, and ultraviolet photoelectron spectroscopy (UPS. The work functions of FLG and MWCNTs are 4.01 eV and 3.79 eV, respectively, obtained from UPS (He-I spectra. UPS (He-II results suggest that the density of states (DOS of MWCNTs is higher than FLG and is consistent with Raman spectroscopy result that shows the defect of MWCNTs is higher than FLG. The magnetic coercivity (Hc of the MWCNTs (~750 Oe is higher than FLG (~85 Oe which could be used for various technological magnetic applications.

  2. Local Electronic Structure of a Single-Layer Porphyrin-Containing Covalent Organic Framework

    KAUST Repository

    Chen, Chen

    2017-12-20

    We have characterized the local electronic structure of a porphyrin-containing single-layer covalent organic framework (COF) exhibiting a square lattice. The COF monolayer was obtained by the deposition of 2,5-dimethoxybenzene-1,4-dicarboxaldehyde (DMA) and 5,10,15,20-tetrakis(4-aminophenyl) porphyrin (TAPP) onto a Au(111) surface in ultrahigh vacuum followed by annealing to facilitate Schiff-base condensations between monomers. Scanning tunneling spectroscopy (STS) experiments conducted on isolated TAPP precursor molecules and the covalently linked COF networks yield similar transport (HOMO-LUMO) gaps of 1.85 ± 0.05 eV and 1.98 ± 0.04 eV, respectively. The COF orbital energy alignment, however, undergoes a significant downward shift compared to isolated TAPP molecules due to the electron-withdrawing nature of the imine bond formed during COF synthesis. Direct imaging of the COF local density of states (LDOS) via dI/dV mapping reveals that the COF HOMO and LUMO states are localized mainly on the porphyrin cores and that the HOMO displays reduced symmetry. DFT calculations reproduce the imine-induced negative shift in orbital energies and reveal that the origin of the reduced COF wave function symmetry is a saddle-like structure adopted by the porphyrin macrocycle due to its interactions with the Au(111) substrate.

  3. Electron mobility in the inversion layers of fully depleted SOI films

    Energy Technology Data Exchange (ETDEWEB)

    Zaitseva, E. G., E-mail: ZaytsevaElza@yandex.ru; Naumova, O. V.; Fomin, B. I. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2017-04-15

    The dependences of the electron mobility μ{sub eff} in the inversion layers of fully depleted double–gate silicon-on-insulator (SOI) metal–oxide–semiconductor (MOS) transistors on the density N{sub e} of induced charge carriers and temperature T are investigated at different states of the SOI film (inversion–accumulation) from the side of one of the gates. It is shown that at a high density of induced charge carriers of N{sub e} > 6 × 10{sup 12} cm{sup –2} the μeff(T) dependences allow the components of mobility μ{sub eff} that are related to scattering at surface phonons and from the film/insulator surface roughness to be distinguished. The μ{sub eff}(N{sub e}) dependences can be approximated by the power functions μ{sub eff}(N{sub e}) ∝ N{sub e}{sup −n}. The exponents n in the dependences and the dominant mechanisms of scattering of electrons induced near the interface between the SOI film and buried oxide are determined for different N{sub e} ranges and film states from the surface side.

  4. Optimization of the electron collection efficiency of a large area MCP-PMT for the JUNO experiment

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Lin, E-mail: chenlin@opt.cn [State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics (XIOPM), Chinese Academy of Sciences (CAS), Xi’an 710119 (China); Graduate School of Chinese Academy of Sciences (CAS), Beijing 100049 (China); Xi’an Jiaotong University, Xi’an 710049 (China); Tian, Jinshou [Graduate School of Chinese Academy of Sciences (CAS), Beijing 100049 (China); Liu, Chunliang [Xi’an Jiaotong University, Xi’an 710049 (China); Wang, Yifang; Zhao, Tianchi [Institute of High Energy Physics (IHEP) of CAS, Beijing 100049 (China); Liu, Hulin; Wei, Yonglin; Sai, Xiaofeng [Graduate School of Chinese Academy of Sciences (CAS), Beijing 100049 (China); Chen, Ping [State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics (XIOPM), Chinese Academy of Sciences (CAS), Xi’an 710119 (China); Graduate School of Chinese Academy of Sciences (CAS), Beijing 100049 (China); Wang, Xing; Lu, Yu [Graduate School of Chinese Academy of Sciences (CAS), Beijing 100049 (China); Hui, Dandan; Guo, Lehui [State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics (XIOPM), Chinese Academy of Sciences (CAS), Xi’an 710119 (China); Graduate School of Chinese Academy of Sciences (CAS), Beijing 100049 (China); Liu, Shulin; Qian, Sen; Xia, Jingkai; Yan, Baojun; Zhu, Na [Institute of High Energy Physics (IHEP) of CAS, Beijing 100049 (China); Sun, Jianning; Si, Shuguang [North Night Vision Technology (NNVT) CO., LTD, Nanjing 210110 (China); and others

    2016-08-11

    A novel large-area (20-inch) photomultiplier tube based on microchannel plate (MCP-PMTs) is proposed for the Jiangmen Underground Neutrino Observatory (JUNO) experiment. Its photoelectron collection efficiency C{sub e} is limited by the MCP open area fraction (A{sub open}). This efficiency is studied as a function of the angular (θ), energy (E) distributions of electrons in the input charge cloud and the potential difference (U) between the PMT photocathode and the MCP input surface, considering secondary electron emission from the MCP input electrode. In CST Studio Suite, Finite Integral Technique and Monte Carlo method are combined to investigate the dependence of C{sub e} on θ, E and U. Results predict that C{sub e} can exceed A{sub open}, and are applied to optimize the structure and operational parameters of the 20-inch MCP-PMT prototype. C{sub e} of the optimized MCP-PMT is expected to reach 81.2%. Finally, the reduction of the penetration depth of the MCP input electrode layer and the deposition of a high secondary electron yield material on the MCP are proposed to further optimize C{sub e}.

  5. Optimization of the electron collection efficiency of a large area MCP-PMT for the JUNO experiment

    International Nuclear Information System (INIS)

    Chen, Lin; Tian, Jinshou; Liu, Chunliang; Wang, Yifang; Zhao, Tianchi; Liu, Hulin; Wei, Yonglin; Sai, Xiaofeng; Chen, Ping; Wang, Xing; Lu, Yu; Hui, Dandan; Guo, Lehui; Liu, Shulin; Qian, Sen; Xia, Jingkai; Yan, Baojun; Zhu, Na; Sun, Jianning; Si, Shuguang

    2016-01-01

    A novel large-area (20-inch) photomultiplier tube based on microchannel plate (MCP-PMTs) is proposed for the Jiangmen Underground Neutrino Observatory (JUNO) experiment. Its photoelectron collection efficiency C e is limited by the MCP open area fraction (A open ). This efficiency is studied as a function of the angular (θ), energy (E) distributions of electrons in the input charge cloud and the potential difference (U) between the PMT photocathode and the MCP input surface, considering secondary electron emission from the MCP input electrode. In CST Studio Suite, Finite Integral Technique and Monte Carlo method are combined to investigate the dependence of C e on θ, E and U. Results predict that C e can exceed A open , and are applied to optimize the structure and operational parameters of the 20-inch MCP-PMT prototype. C e of the optimized MCP-PMT is expected to reach 81.2%. Finally, the reduction of the penetration depth of the MCP input electrode layer and the deposition of a high secondary electron yield material on the MCP are proposed to further optimize C e .

  6. Ultrafast triggered transient energy storage by atomic layer deposition into porous silicon for integrated transient electronics

    Science.gov (United States)

    Douglas, Anna; Muralidharan, Nitin; Carter, Rachel; Share, Keith; Pint, Cary L.

    2016-03-01

    Here we demonstrate the first on-chip silicon-integrated rechargeable transient power source based on atomic layer deposition (ALD) coating of vanadium oxide (VOx) into porous silicon. A stable specific capacitance above 20 F g-1 is achieved until the device is triggered with alkaline solutions. Due to the rational design of the active VOx coating enabled by ALD, transience occurs through a rapid disabling step that occurs within seconds, followed by full dissolution of all active materials within 30 minutes of the initial trigger. This work demonstrates how engineered materials for energy storage can provide a basis for next-generation transient systems and highlights porous silicon as a versatile scaffold to integrate transient energy storage into transient electronics.Here we demonstrate the first on-chip silicon-integrated rechargeable transient power source based on atomic layer deposition (ALD) coating of vanadium oxide (VOx) into porous silicon. A stable specific capacitance above 20 F g-1 is achieved until the device is triggered with alkaline solutions. Due to the rational design of the active VOx coating enabled by ALD, transience occurs through a rapid disabling step that occurs within seconds, followed by full dissolution of all active materials within 30 minutes of the initial trigger. This work demonstrates how engineered materials for energy storage can provide a basis for next-generation transient systems and highlights porous silicon as a versatile scaffold to integrate transient energy storage into transient electronics. Electronic supplementary information (ESI) available: (i) Experimental details for ALD and material fabrication, ellipsometry film thickness, preparation of gel electrolyte and separator, details for electrochemical measurements, HRTEM image of VOx coated porous silicon, Raman spectroscopy for VOx as-deposited as well as annealed in air for 1 hour at 450 °C, SEM and transient behavior dissolution tests of uniformly coated VOx on

  7. Electronic and optical properties of vacancy defects in single-layer transition metal dichalcogenides

    Science.gov (United States)

    Khan, M. A.; Erementchouk, Mikhail; Hendrickson, Joshua; Leuenberger, Michael N.

    2017-06-01

    A detailed first-principles study has been performed to evaluate the electronic and optical properties of single-layer (SL) transition metal dichalcogenides (TMDCs) (M X 2 ; M = transition metal such as Mo, W, and X = S, Se, Te), in the presence of vacancy defects (VDs). Defects usually play an important role in tailoring electronic, optical, and magnetic properties of semiconductors. We consider three types of VDs in SL TMDCs: (i) X vacancy, (ii) X2 vacancy, and (iii) M vacancy. We show that VDs lead to localized defect states (LDS) in the band structure, which in turn gives rise to sharp transitions in in-plane and out-of-plane optical susceptibilities, χ∥ and χ⊥. The effects of spin-orbit coupling (SOC) are also considered. We find that SOC splitting in LDS is directly related to the atomic number of the transition metal atoms. Apart from electronic and optical properties we also find magnetic signatures (local magnetic moment of ˜μB ) in MoSe2 in the presence of the Mo vacancy, which breaks the time-reversal symmetry and therefore lifts the Kramers degeneracy. We show that a simple qualitative tight-binding model (TBM), involving only the hopping between atoms surrounding the vacancy with an on-site SOC term, is sufficient to capture the essential features of LDS. In addition, the existence of the LDS can be understood from the solution of the two-dimensional Dirac Hamiltonian by employing infinite mass boundary conditions. In order to provide a clear description of the optical absorption spectra, we use group theory to derive the optical selection rules between LDS for both χ∥ and χ⊥.

  8. Electron collection enhancement arising from neutral gas jets on a charged vehicle in the ionosphere

    International Nuclear Information System (INIS)

    Gilchrist, B.E.; Banks, P.M.; Neubert, T.; Williamson, P.R.; Myers, N.B.; Raitt, W.J.; Sasaki, Susumu

    1990-01-01

    Observations of current collection enhancements due to cold nitrogen gas control jet emissions from a highly charged, isolated rocket payload in the ionosphere have been made during the cooperative high altitude rocket gun experiment (CHARGE) 2 using an electrically tethered mother/daughter payload system. The current collection enhancement was observed on a platform (daughter payload) located 100 to 400 m away from the main payload firing an energetic electron beam (mother payload). The authors interpret these results in terms of an electrical discharge forming in close proximity to the daughter vehicle during the short periods of gas emission. The results indicate that it is possible to enhance the electron current collection capability of positively charged vehicles by means of deliberate neutral gas releases into an otherwise undisturbed space plasma. The results are also compared with recent laboratory observations of hollow cathode plasma contactors operating in the ignited mode

  9. ANALYSIS OF HOUSEHOLD BEHAVIOUR TO THE COLLECTION OF WASTE ELECTRICAL AND ELECTRONIC EQUIPMENT IN ROMANIA

    Directory of Open Access Journals (Sweden)

    MARIA LOREDANA NICOLESCU

    2015-12-01

    Full Text Available This paper presents an analysis of household behaviour to the collection of waste electrical and electronic equipment in Romania based on an econometric multifactorial linear regression model. In the model, the amount of WEEE* collected in the counties rep resents the endogenous variable, and factors such as regional gross domestic product, the number of employees, monthly average net nominal earnings, unemployed persons, retirees, existing housing, education and other non - quantifiable factors with regional influence are influence factors or explanatory (exogenous variables. The period considered for the study is 2010 - 2012, and statistics are taken and processed at county level. The study is necessary to identify the extent to which those factors influence t he collection of WEEE from private households. The results of this study may lead to an improvement of the management of waste electrical and electronic equipment in Romania, being useful for policy makers and stakeholders involved in the system.

  10. Characterization of secondary electron collection for energy recovery from high energy ions with a magnetic field

    International Nuclear Information System (INIS)

    Hagihara, Shota; Wada, Takayuki; Nakamoto, Satoshi; Takeno, Hiromasa; Yasaka, Yasuyoshi; Furuyama, Yuichi; Taniike, Akira

    2015-01-01

    A traveling wave direct energy converter (TWDEC) is expected to be used as an energy recovery device for fast protons produced during the D- 3 He nuclear fusion reaction. Some protons, however, are not fully decelerated and pass through the device. A secondary electron direct energy converter (SEDEC) was proposed as an additional device to recover the protons passing through a TWDEC. In our previous study, magnetic field was applied for efficient secondary electron (SE) collection, but the SEs were reflected close to the collector due to the magnetic mirror effect and the collection was degraded. Herein, a new arrangement of magnets is proposed to be set away from the collector, and experiments in various conditions are performed. An appropriate arrangement away from the collector resulted in the improvement of SE collection. (author)

  11. Influence of Weak Base Addition to Hole-Collecting Buffer Layers in Polymer:Fullerene Solar Cells

    Directory of Open Access Journals (Sweden)

    Jooyeok Seo

    2017-02-01

    Full Text Available We report the effect of weak base addition to acidic polymer hole-collecting layers in normal-type polymer:fullerene solar cells. Varying amounts of the weak base aniline (AN were added to solutions of poly(3,4-ethylenedioxythiophene:poly(styrenesulfonate (PEDOT:PSS. The acidity of the aniline-added PEDOT:PSS solutions gradually decreased from pH = 1.74 (AN = 0 mol% to pH = 4.24 (AN = 1.8 mol %. The electrical conductivity of the PEDOT:PSS-AN films did not change much with the pH value, while the ratio of conductivity between out-of-plane and in-plane directions was dependent on the pH of solutions. The highest power conversion efficiency (PCE was obtained at pH = 2.52, even though all devices with the PEDOT:PSS-AN layers exhibited better PCE than those with the pristine PEDOT:PSS layers. Atomic force microscopy investigation revealed that the size of PEDOT:PSS domains became smaller as the pH increased. The stability test for 100 h illumination under one sun condition disclosed that the PCE decay was relatively slower for the devices with the PEDOT:PSS-AN layers than for those with pristine PEDOT:PSS layers.

  12. Effective electron collection in highly (110)-oriented ZnO porous nanosheet framework photoanode

    International Nuclear Information System (INIS)

    Wang Xiangyan; Tian Zhipeng; Yu Tao; Tian Hanmin; Zhang Jiyuan; Yuan Shikui; Zhang Xiaobo; Li Zhaosheng; Zou Zhigang

    2010-01-01

    A highly (110)-oriented ZnO porous nanosheet framework is designed as the photoanode in photoelectrochemical systems, by virtue of its anisotropic electronic properties. It can be facilely prepared in large scale via a hydrothermal method. X-ray diffraction (XRD) analyses show that the orientation index of the (110) diffraction plane is 3.54, indicating the films possess (110) preferred orientation. Field-emission scanning electron microscope (FE-SEM) images exhibit that most of the nanosheets stand nearly perpendicularly on the substrate. The {002} lattice planes work just like conducting wires and induce the electrons to transport to the substrate. Chronoamperometry measurement demonstrates an effective electron collection. When the nanostructured photoanode is introduced to dye-sensitized solar cells, a conversion efficiency of 3.7% is obtained. The photoanode also has potential application in the other photoelectrochemical systems, such as photocatalytical splitting of water.

  13. Hole and electron extraction layers based on graphene oxide derivatives for high-performance bulk heterojunction solar cells.

    Science.gov (United States)

    Liu, Jun; Xue, Yuhua; Gao, Yunxiang; Yu, Dingshan; Durstock, Michael; Dai, Liming

    2012-05-02

    By charge neutralization of carboxylic acid groups in graphene oxide (GO) with Cs(2)CO(3) to afford Cesium-neutralized GO (GO-Cs), GO derivatives with appropriate modification are used as both hole- and electron-extraction layers for bulk heterojunction (BHJ) solar cells. The normal and inverted devices based on GO hole- and GO-Cs electron-extraction layers both outperform the corresponding standard BHJ solar cells. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Hole and electron extraction layers based on graphene oxide derivatives for high-performance bulk heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jun; Gao, Yunxiang; Yu, Dingshan; Dai, Liming [Center of Advanced Science and Engineering for Carbon, Department of Macromolecular, Science and Engineering, Case School of Engineering, Case Western Reserve University, Cleveland, Ohio (United States); Xue, Yuhua [Center of Advanced Science and Engineering for Carbon, Department of Macromolecular, Science and Engineering, Case School of Engineering, Case Western Reserve University, Cleveland, Ohio (United States); Institute of Advanced Materials for Nano-Bio Applications, School of Ophthalmology and Optometry, Wenzhou Medical College, Zhejiang 325027 (China); Durstock, Michael [Materials and Manufacturing Directorate, Air Force Research Laboratory, RXBP, Wright-Patterson Air Force Base, Ohio 45433 (United States)

    2012-05-02

    By charge neutralization of carboxylic acid groups in graphene oxide (GO) with Cs{sub 2}CO{sub 3} to afford Cesium-neutralized GO (GO-Cs), GO derivatives with appropriate modification are used as both hole- and electron-extraction layers for bulk heterojunction (BHJ) solar cells. The normal and inverted devices based on GO hole- and GO-Cs electron-extraction layers both outperform the corresponding standard BHJ solar cells. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Structure and Electronic Properties of In Situ Synthesized Single-Layer MoS2 on a Gold Surface

    DEFF Research Database (Denmark)

    Sørensen, Signe Grønborg; Füchtbauer, Henrik Gøbel; Tuxen, Anders Kyrme

    2014-01-01

    When transition metal sulfides such as MoS2 are present in the single-layer form, the electronic properties change in fundamental ways, enabling them to be used, e.g., in two-dimensional semiconductor electronics, optoelectronics, and light harvesting. The change is related to a subtle modification...... with scanning tunneling microscopy and X-ray photoelectron spectroscopy characterization of two-dimensional single-layer islands of MoS2 synthesized directly on a gold single crystal substrate. Thanks to a periodic modulation of the atom stacking induced by the lattice mismatch, we observe a structural buckling...

  16. Investigation of the stability of polysilicon layers in SOI-structures under irradiation by electrons and hard magnetic field influence

    Directory of Open Access Journals (Sweden)

    Khoverko Yu. N.

    2010-10-01

    Full Text Available The properties of recrystallized polysilicon on insulator layers of p-type conductive SOI-structures with different carrier concentration irradiated with high-energy electrons flow about 1017 сm–2 in temperature range 4,2—300 К and high magnetic fields were investigated. It was found that heavily doped laser recrystallized polysilicon on insulator layers show its radiation resistance under irradiation with high-energy electrons and magnetoresistance of such material remains quite low in magnetic field about 14 T does not exceed 1—2%. Such qulity can be applied in designing of microelectronic sensors of mechanical values operable in hard conditions of exploitation.

  17. Strengthening effect of nano-scaled precipitates in Ta alloying layer induced by high current pulsed electron beam

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Guangze; Luo, Dian; Fan, Guohua [School of Material Science & Engineering, Harbin Institute of Technology, Harbin 150001 (China); Ma, Xinxin, E-mail: maxin@hit.edu.cn [State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001 (China); Wang, Liqin [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China)

    2017-05-01

    Highlights: • Ta alloying layer are fabricated by magnetron sputtering and high current pulsed electron beam. • Nano-scaled TaC precipitates forms within the δ-Fe grain after tempering treatment. • The mean diameter of TaC particles is about 5–8 nm. • The hardness of alloying layer increased by over 50% after formation of nano-scaled TaC particle. - Abstract: In this study, the combination of magnetron sputtering and high current pulsed electron beam are used for surface alloying treatment of Ta film on high speed steel. And the Ta alloying layer is about 6 μm. After tempering treatment, TaC phase forms in Ta alloying layer when the treated temperature is over 823 K. Through the TEM and HRTEM observation, a large amount of nano-scaled precipitates (mean diameter 5–8 nm) form within the δ-Fe grain in Ta alloying layer after tempering treatment and these nano-scaled precipitates are confirmed as TaC particles, which contribute to the strengthening effect of the surface alloying layer. The hardness of tempered alloying layer can reach to 18.1 GPa when the treated temperature is 823 K which increase by 50% comparing with the untreated steel sample before surface alloying treatment.

  18. Tail state-assisted charge injection and recombination at the electron-collecting interface of P3HT:PCBM bulk-heterojunction polymer solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wang, He [Department of Chemical and Biological Engineering, Princeton University, Princeton, NJ 08544 (United States); Department of Electrical Engineering, Princeton University, Princeton, NJ 08544 (United States); Shah, Manas [Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Ganesan, Venkat [Department of Chemical Engineering, University of Texas at Austin, Austin, TX 78712 (United States); Chabinyc, Michael L. [Materials Department, University of California Santa Barbara, CA 93106 (United States); Loo, Yueh-Lin [Department of Chemical and Biological Engineering, Princeton University, Princeton, NJ 08544 (United States)

    2012-12-15

    The systematic insertion of thin films of P3HT and PCBM at the electron- and hole-collecting interfaces, respectively, in bulk-heterojunction polymer solar cells results in different extents of reduction in device characteristics, with the insertion of P3HT at the electron-collecting interface being less disruptive to the output currents compared to the insertion of PCBM at the hole-collecting interface. This asymmetry is attributed to differences in the tail state-assisted charge injection and recombination at the active layer-electrode interfaces. P3HT exhibits a higher density of tail states compared to PCBM; holes in these tail states can thus easily recombine with electrons at the electron-collection interface during device operation. This process is subsequently compensated by the injection of holes from the cathode into these tail states, which collectively enables net current flow through the polymer solar cell. The study presented herein thus provides a plausible explanation for why preferential segregation of P3HT to the cathode interface is inconsequential to device characteristics in P3HT:PCBM bulk-heterojunction solar cells. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Theoretical study of thin metallic deposit layers: from electronic structure to kinetics

    International Nuclear Information System (INIS)

    Senhaji, Abdelali

    1993-01-01

    We have studied the relation between the equilibrium surface segregation in an alloy A c B 1-c and the kinetics of dissolution of a few metallic layers of A (or B) deposited on a B (or A) substrate. We used an energetic model derived from the electronic structure (T.B.I.M.) allowing us to study the surface segregation both in disordered and in ordered alloys. Moreover we have developed a kinetic model (K.T.B.I.M.) consistent with the TBIM energetic model to study the kinetics both of segregation and dissolution. This process has been applied to the Cu-Pt system for which Auger, LEED and photoemission experiments are in progress at L.U.R.E. Concerning the equilibrium surface segregation in the ordered state we have studied all the possible terminations for the (111) and (100) faces in the various ordered structures occurring on the F.C.C. lattice (L1 0 , L1 1 - L1 2 and L'). In particular we have determined the domain of (meta)stability of each termination, which is very useful to understand the competition between single and double steps in ordered alloys. Studying the kinetics of dissolution of a few layers of Cu (or Pt) deposited on the (111) or (100) face of a Pt (or Cu) substrate, we have shown the formation of surface compounds with a great variety of behaviours depending on the face or on the temperature. All these behaviours can be rationalized with the local equilibrium concept, which we have defined accurately within our model and which allows to connect the dissolution mode with the equilibrium segregation. (author) [fr

  20. Plasma and energetic electron flux variations in the Mercury 1 C event: Evidence for a magnetospheric boundary layer

    International Nuclear Information System (INIS)

    Christon, S.P.

    1989-01-01

    Near the outbound magnetopause crossing during the first encounter of Mariner 10 with the planet Mercury on March 29, 1974, large intensity, ∼ 6 s quasi-periodic variations in the intensity-time profile of the charged particle experiment's electron counting rate appeared as a series of peaks and valleys. The peaks have previously been interpreted as quasi-periodic burst sequences of mildly relativistic electrons, caused in one case by episodic ∼ 6-s magnetotail substorm reconnection events and in another case by multiple encounters with a substorm energized electron population drifting around Mercury with an ∼ 6 s drift period. In this paper, the authors offer a new and fundamentally different interpretation of the Mariner 10 energetic electron, plasma electron, and magnetic field data near the outbound magnetopause at Mercury 1. They show that magnetosheath-like boundary layer plasma was observed up to ∼ 360 km planetward of the dawn magnetopause crossing as sensed by the magnetometer. They show that observations of substorm enhanced > 35 keV electron flux (that previously interpreted as > 175 keV electrons) associated with the hot tenuous plasma sheet population were interleaved with ∼ 6 s period observations of a cold dense boundary layer plasma associated with a much lower > 35 keV electron flux. They argue that the ∼ 6 s temporal signature is due to variation of the thickness and/or position of the boundary layer plasma population. This explanation of the ∼ 6-s variations, based upon the analysis of the coincident responses of the magnetic field experiment and two independent charged particle instruments (at their highest temporal resolutions), finds a direct analogue in observations of Earth's magnetospheric boundary layer, although the time scales are significantly shorter at Mercury

  1. Electron density and plasma waves in mid-latitude sporadic-E layer observed during the SEEK-2 campaign

    Directory of Open Access Journals (Sweden)

    M. Wakabayashi

    2005-10-01

    Full Text Available The SEEK-2 campaign was carried out over Kyushu Island in Japan on 3 August 2002, by using the two sounding rockets of S310-31 and S310-32. This campaign was planned to elucidate generation mechanisms of Quasi-Periodic Echoes (QPEs associated with mid-latitude sporadic-E (Es layers. Electron number densities were successfully measured in the Es layers by using the impedance probe on board two rockets. The plasma waves in the VLF and ELF ranges were also observed on board the S310-32 rocket. Results of electron density measurement showed that there were one or two major peaks in the Es layers along the rockets' trajectories near the altitude of about 10km. There were some smaller peaks associated with the main Es layers in the altitude range from 90 to 120 km. These density peaks were distributed in a very large extent during the SEEK-2 campaign. The Es layer structure is also measured by using the Fixed Bias Probe (FBP, which has a high spatial resolution of several meters (the impedance probe has an altitude resolution of about 400 m. The comparison with the total electron content (TEC measured by the Dual Band Beacon revealed that the Es layer was also modulated in the horizontal direction with the scale size of 30–40 km. It was shown that the QP echoes observed by the ground-based coherent radar come from the major density peak of the Es layer. The plasma wave instrument detected the enhancement of VLF and ELF plasma waves associated with the operation of the TMA release, and also with the passage of the Es layers. Keywords. Ionosphere (Ionospheric irregularities; Midlatitude ionosphere; Plasma temeperature and density

  2. Spatial Atmospheric Pressure Atomic Layer Deposition of Tin Oxide as an Impermeable Electron Extraction Layer for Perovskite Solar Cells with Enhanced Thermal Stability.

    Science.gov (United States)

    Hoffmann, Lukas; Brinkmann, Kai O; Malerczyk, Jessica; Rogalla, Detlef; Becker, Tim; Theirich, Detlef; Shutsko, Ivan; Görrn, Patrick; Riedl, Thomas

    2018-02-14

    Despite the notable success of hybrid halide perovskite-based solar cells, their long-term stability is still a key-issue. Aside from optimizing the photoactive perovskite, the cell design states a powerful lever to improve stability under various stress conditions. Dedicated electrically conductive diffusion barriers inside the cell stack, that counteract the ingress of moisture and prevent the migration of corrosive halogen species, can substantially improve ambient and thermal stability. Although atomic layer deposition (ALD) is excellently suited to prepare such functional layers, ALD suffers from the requirement of vacuum and only allows for a very limited throughput. Here, we demonstrate for the first time spatial ALD-grown SnO x at atmospheric pressure as impermeable electron extraction layers for perovskite solar cells. We achieve optical transmittance and electrical conductivity similar to those in SnO x grown by conventional vacuum-based ALD. A low deposition temperature of 80 °C and a high substrate speed of 2.4 m min -1 yield SnO x layers with a low water vapor transmission rate of ∼10 -4 gm -2 day -1 (at 60 °C/60% RH). Thereby, in perovskite solar cells, dense hybrid Al:ZnO/SnO x electron extraction layers are created that are the key for stable cell characteristics beyond 1000 h in ambient air and over 3000 h at 60 °C. Most notably, our work of introducing spatial ALD at atmospheric pressure paves the way to the future roll-to-roll manufacturing of stable perovskite solar cells.

  3. On the over-collection of electrons by high voltage probes in space

    International Nuclear Information System (INIS)

    Cooke, D.L.; Katz, I.; Jongeward, G.; Mandell, M.

    1988-01-01

    It has been two decades since Parker and Murphy proposed a theory to place a rigorous upper bound on the current to an electron collecting probe in space, due to the influence of the geomagnetic field. Any greater current is then thought to involve some form of anomalous cross field transport to explain over-collection. Over-collection is commonly observed and is usually explained by invoking turbulence as a source of collisions. Although the turbulence hypothesis has some theoretical basis, no compelling kinetic theory or model has been put forth. Another possible explanation for over-collection is the ionization of the neutral gas within the charge sheath. Recently, in support of the SPEAR I rocket experiment, the three dimensional code POLAR has been used to model electron collection in a low earth orbit plasma. SPEAR I was a sounding rocket experiment that exposed to the space plasma, a pair of 10cm spherical probes biased to 44kV positive. The POLAR runs included single sphere, two sphere, and two sphere plus rocket modes. The single sphere model did not predict collection in excess of the Parker-Murphy limit. Models of two sphere collection, and of the entire experiment do however show that increased collection is possible as a result of asymetries introduced by geometry and a negative rocket body potential. These models were in close agreement with the experiment. In addition to the symmetry factor, sheath ionization is reviewed. A discussion of the role and kinetic nature of collisionless turbulence is presented

  4. Electronic properties of {mu}c-Si:H layers investigated with Hall measurements

    Energy Technology Data Exchange (ETDEWEB)

    Bronger, T

    2007-02-28

    In the present work, the electronic properties of thin layers of PECVD-grown {mu}c-Si:H have been examined using the Hall effect. The main focus was on the mobility of the carriers because this is a crucial limiting factor for the electronic quality of this material, however, the density of free carriers as well as the conductivity were also determined. In order to get a picture as comprehensive as possible, a sample matrix was studied consisting of samples with different n-type doping levels and different crystallinities. Additionally, doped samples with artificially implanted defects which could be annealed gradually were investigated. All measurements have been made temperature-dependently. During the work, a new computer control and analysis program was developed from scratch for the Hall setup. It allows for high automation as well as comprehensive error estimation, both of which being very important for high ohmic samples. All samples showed a thermally activated mobility and carrier concentration, however, there is no single activation energy. Instead, all Arrhenius plots exhibited a more or less pronounced convex curvature. This curvature was identified with the parallel connection of a broad distribution of barriers in the material, which are limiting to the transport and are overcome by thermoionic emission. From this, the model of normally distributed barriers (NDB) was derived, mathematically investigated, and successfully applied to the experimental data of this work and (for not too highly doped samples) of other works. As a significant validation of the NDB model, the relative room-temperature mobility values could be calculated just from the Arrhenius slopes and curvatures. A very important dependence turned out to be mobility versus carrier concentration. In particular the annealed sample showed a clear {mu} {proportional_to} n{sup 1/2} behaviour, which could be backed with the sample matrix. Additionally, Hall measurements on HWCVD-grown {mu

  5. Influence of the number of layers on ultrathin CsSnI3 perovskite: from electronic structure to carrier mobility

    Science.gov (United States)

    Liu, Biao; Long, Mengqiu; Cai, Meng-Qiu; Yang, Junliang

    2018-03-01

    Inorganic halide perovskites have attracted great attention in recent years as promising materials for optoelectronic devices, with ultrathin inorganic halide perovskites showing excellent properties and great potential applications. Herein, the intrinsic electronic and optical properties of ultrathin cesium tin tri-iodide (CsSnI3) perovskite with a varying number of layers are explored using first-principles calculations. The results reveal that ultrathin CsSnI3 is a direct band gap semiconductor, and the band gap continues to increase to 1.83 eV from 1.28 eV as the number of layers is reduced to one layer from the bulk. By decreasing the number of layers, the effective mass of ultrathin CsSnI3 increases, and the optical absorption intensity along the x and y directions shows that the linear dichroism becomes stronger and stronger. Furthermore, the carrier mobilities (µ) can be predicted, and they show obvious in-plane anisotropy. The µ of the electrons is higher than that of the holes, and the electron mobility along the y direction is higher than that along the x direction. The layer thickness does not distinctly influence the µ. The difference in the atomic orbital distribution has the nature of obvious anisotropy in ultrathin CsSnI3. This work suggests that ultrathin inorganic perovskite could be a potential candidate for future nano-optoelectronic devices.

  6. Local deposition of high-purity Pt nanostructures by combining electron beam induced deposition and atomic layer deposition

    NARCIS (Netherlands)

    Mackus, A.J.M.; Mulders, J.J.L.; Sanden, van de M.C.M.; Kessels, W.M.M.

    2010-01-01

    An approach for direct-write fabrication of high-purity platinum nanostructures has been developed by combining nanoscale lateral patterning by electron beam induced deposition (EBID) with area-selective deposition of high quality material by atomic layer deposition (ALD). Because virtually pure,

  7. N-type polymers as electron extraction layers in hybrid perovskite solar cells with improved ambient stability

    NARCIS (Netherlands)

    Shao, S.; Chen, Z.; Fang, H. -H.; ten Brink, G. H.; Bartesaghi, D.; Adjokatse, S.; Koster, L. J. A.; Kooi, B. J.; Facchetti, A.; Loi, M. A.

    2016-01-01

    We studied three n-type polymers of the naphthalenediimide-bithiophene family as electron extraction layers (EELs) in hybrid perovskite solar cells. The recombination mechanism in these devices is found to be heavily influenced by the EEL transport properties. The maximum efficiency of the devices

  8. Atomic-layer deposited Nb2O5 as transparent passivating electron contact for c-Si solar cells

    NARCIS (Netherlands)

    Macco, Bart; Black, Lachlan E.; Melskens, Jimmy; van de Loo, Bas W.H.; Berghuis, Willem Jan H.; Verheijen, Marcel A.; Kessels, Wilhelmus M.M.

    2018-01-01

    Passivating contacts based on metal oxides have proven to enable high energy conversion efficiencies for crystalline silicon (c-Si) solar cells at low processing complexity. In this work, the potential of atomic-layer deposited (ALD) Nb2O5 as novel electron-selective passivating contact is explored

  9. O3 Layers via Spray Pyrolysis at Low Temperatures and Their Application in High Electron Mobility Transistors

    KAUST Repository

    Isakov, Ivan

    2017-04-06

    The growth mechanism of indium oxide (InO) layers processed via spray pyrolysis of an aqueous precursor solution in the temperature range of 100-300 °C and the impact on their electron transporting properties are studied. Analysis of the droplet impingement sites on the substrate\\'s surface as a function of its temperature reveals that Leidenfrost effect dominated boiling plays a crucial role in the growth of smooth, continuous, and highly crystalline InO layers via a vapor phase-like process. By careful optimization of the precursor formulation, deposition conditions, and choice of substrate, this effect is exploited and ultrathin and exceptionally smooth layers of InO are grown over large area substrates at temperatures as low as 252 °C. Thin-film transistors (TFTs) fabricated using these optimized InO layers exhibit superior electron transport characteristics with the electron mobility reaching up to 40 cm V s, a value amongst the highest reported to date for solution-processed InO TFTs. The present work contributes enormously to the basic understanding of spray pyrolysis and highlights its tremendous potential for large-volume manufacturing of high-performance metal oxide thin-film transistor electronics.

  10. O3 Layers via Spray Pyrolysis at Low Temperatures and Their Application in High Electron Mobility Transistors

    KAUST Repository

    Isakov, Ivan; Faber, Hendrik; Grell, Max; Wyatt-Moon, Gwenhivir; Pliatsikas, Nikos; Kehagias, Thomas; Dimitrakopulos, George P.; Patsalas, Panos P.; Li, Ruipeng; Anthopoulos, Thomas D.

    2017-01-01

    The growth mechanism of indium oxide (InO) layers processed via spray pyrolysis of an aqueous precursor solution in the temperature range of 100-300 °C and the impact on their electron transporting properties are studied. Analysis of the droplet impingement sites on the substrate's surface as a function of its temperature reveals that Leidenfrost effect dominated boiling plays a crucial role in the growth of smooth, continuous, and highly crystalline InO layers via a vapor phase-like process. By careful optimization of the precursor formulation, deposition conditions, and choice of substrate, this effect is exploited and ultrathin and exceptionally smooth layers of InO are grown over large area substrates at temperatures as low as 252 °C. Thin-film transistors (TFTs) fabricated using these optimized InO layers exhibit superior electron transport characteristics with the electron mobility reaching up to 40 cm V s, a value amongst the highest reported to date for solution-processed InO TFTs. The present work contributes enormously to the basic understanding of spray pyrolysis and highlights its tremendous potential for large-volume manufacturing of high-performance metal oxide thin-film transistor electronics.

  11. Influence of multiple scattering of a relativistic electron in a periodic layered medium on coherent X-ray radiation

    Energy Technology Data Exchange (ETDEWEB)

    Blazhevich, S. V.; Kos’kova, T. V.; Noskov, A. V., E-mail: noskovbupk@mail.ru [Belgorod State National Research University (Russian Federation)

    2016-01-15

    A dynamic theory of coherent X-ray radiation generated in a periodic layered medium by a relativistic electron multiply scattered by target atoms has been developed. The expressions describing the spectral–angular characteristics of parametric X-ray radiation and diffracted transition radiation are derived. Numerical calculations based on the derived expressions have been performed.

  12. Amorphous Tin Oxide as a Low-Temperature-Processed Electron-Transport Layer for Organic and Hybrid Perovskite Solar Cells

    KAUST Repository

    Barbe, Jeremy; Tietze, Max Lutz; Neophytou, Marios; Banavoth, Murali; Alarousu, Erkki; El Labban, Abdulrahman; Abulikemu, Mutalifu; Yue, Wan; Mohammed, Omar F.; McCulloch, Iain; Amassian, Aram; Del Gobbo, Silvano

    2017-01-01

    Chemical bath deposition (CBD) of tin oxide (SnO) thin films as an electron-transport layer (ETL) in a planar-heterojunction n-i-p organohalide lead perovskite and organic bulk-heterojunction (BHJ) solar cells is reported. The amorphous SnO (a

  13. Secondary electron emission influenced by oxidation on the aluminum surface: the roles of the chemisorbed oxygen and the oxide layer

    Science.gov (United States)

    Li, Jiangtao; Hoekstra, Bart; Wang, Zhen-Bin; Qiu, Jie; Pu, Yi-Kang

    2018-04-01

    A relationship between the apparent secondary electron yield ({γ }{{se}}) and the oxygen coverage/oxide layer thickness on an aluminum cathode is obtained in an experiment under a controlled environment. The apparent secondary electron yield ({γ }{{se}}) is deduced from the breakdown voltage between two parallel plate electrodes in a 360 mTorr argon environment using a simple Townsend breakdown model with the assumption that the variation of the apparent secondary electron yield is dominated by the variation of the argon ion induced processes. The oxygen coverage/oxide layer thickness on the aluminum cathode is measured by a semi in situ x-ray photoemission spectroscopy equipment which is directly attached to the discharge chamber. It is found that three phases exist: (1) in the monomonolayer regime, as the oxygen coverage increases from 0 to 0.3, {γ }{{se}} decreases by nearly 40 % , (2) as the oxygen coverage increases from 0.3 to 1, {γ }{{se}} keeps nearly constant, (3) as the oxide layer thickness increases from about 0.3 nm to about 1.1 nm, {γ }{{se}} increases by 150 % . We propose that, in the submonolayer regime, the chemisorbed oxygen on the aluminum surface causes the decrease of {γ }{{se}} by creating a local potential barrier, which reduces the Auger neutralization rate and the energy gained by the Auger electrons. In the multilayer regime, as the oxide layer grows in thickness, there are three proposed mechanisms which cause the increase of {γ }{{se}}: (1) the work function decreases; (2) resonance neutralization and Auger de-excitation may exist. This is served as another channel for secondary electron production; (3) the kinetic energy of Auger electrons is increased on average, leading to a higher probability for electrons to overcome the surface potential barrier.

  14. Measuring the Capacity and Transaction Time of Cash and Electronic Toll Collection Systems

    Directory of Open Access Journals (Sweden)

    Rudy Hermawan Karsaman

    2014-07-01

    Full Text Available A long queue can occur at tollgates due to the amount of transaction time required to perform ticket payment and toll fee collection. This problem can be addressed by the use of an electronic toll collection (ETC system. A case study conducted on the Jakarta Intra Urban, Cikupa-Merak, and Cawang Pluit Toll Roads suggests that the queueing at the tollgates when modelled followed a Poisson distribution. The average cash transaction time was approximately 5 to 6 seconds, while the ETC transaction time was only 4 seconds. Furthermore, the capacity of the cash system gate was 550 to 620 vehicles/hour (which is above the minimum service standard of 450 vehicles/hour,whereas the electronic gate capacity was 770 to 870 vehicles/hour. This study demonstrates that the ETC system is more effective than the cash system in terms of reducing the number of queueing vehicles.

  15. Photodiode Based on CdO Thin Films as Electron Transport Layer

    Science.gov (United States)

    Soylu, M.; Kader, H. S.

    2016-11-01

    Cadmium oxide (CdO) thin films were synthesized by the sol-gel method. The films were analyzed by means of XRD, AFM, and UV/Vis spectrophotometry. X-ray diffraction patterns confirm that the films are formed from CdO with cubic crystal structure and consist of nano-particles. The energy gap of the prepared film was found to be 2.29 eV. The current-voltage ( I- V) characteristics of the CdO/ p-Si heterojunction were examined in the dark and under different illumination intensities. The heterojunction showed high rectifying behavior and a strong photoresponse. Main electrical parameters of the photodiode such as series and shunt resistances ( R s and R sh), saturation current I 0, and photocurrent I ph, were extracted considering a single diode equivalent circuit of a photovoltaic cell. Results indicate that the application of CdO thin films as an electron transport layer on p-Si acts as a photodetector in the field of the UV/visible.

  16. Electronic properties of the layer III-VI semiconductors. A comparative study

    International Nuclear Information System (INIS)

    Depeursinge, Y.

    1981-01-01

    The electronic properties of the family of layer compounds InSe, GaSe and GaS by the empirical pseudopotential method have been studied. Both atomic positions, which are not accurately known from experiment, and atomic pseudopotentials are adjusted to fit the main optical and photoemission data with the further constraint that the same Se potential should be valid for InSe and GaSe, and the same Ga potential for GaS and GaSe. The charge densities have also been calculated and show that the ionicity of InSe is greater than that of GaS and GaSe, in good agreement with the Phillips electronegativity scale which predicts that InSe is 1.2 and 1.3 times more ionic than GaS and GaSe, respectively. The calculated band structures and charge densities allow a detailed discussion of the integrated and angle-resolved photoemission data as well as of the optical properties of these compounds. (author)

  17. Spin-dependent electron-phonon coupling in the valence band of single-layer WS2

    DEFF Research Database (Denmark)

    Hinsche, Nicki Frank; Ngankeu, Arlette S.; Guilloy, Kevin

    2017-01-01

    The absence of inversion symmetry leads to a strong spin-orbit splitting of the upper valence band of semiconducting single-layer transition-metal dichalchogenides such as MoS2 or WS2. This permits a direct comparison of the electron-phonon coupling strength in states that only differ by their spin....... Here, the electron-phonon coupling in the valence band maximum of single-layer WS2 is studied by first-principles calculations and angle-resolved photoemission. The coupling strength is found to be drastically different for the two spin-split branches, with calculated values of λK=0.0021 and 0.......40 for the upper and lower spin-split valence band of the freestanding layer, respectively. This difference is somewhat reduced when including scattering processes involving the Au(111) substrate present in the experiment but it remains significant, in good agreement with the experimental results....

  18. Energy- and temperature dependences of secondary electron emission of CsI- and CsBr layers doped with Cd

    International Nuclear Information System (INIS)

    Galij, P.V.; Tsal', N.A.

    1983-01-01

    The energy and temperature dependences of the secondary electron emission coefficient (SEEC) of CsI-Cd-, CsBr-Cd-, CsI-CsBr layers have been studied. The effect of bivalent cadmium impurity on the SEEC value is investigated. It is shown that implantation of small amounts of Cd 2+ impurity into the lattice of the initial monocrystals might increase the SEEC values of the layers. Temperature dependences (TD) of SEEC are measured and the possibility of comparing experimental results with the Dekker formula is analyzed. A conclusion is drawn that the Dekker model well describes the TD of SEEC of doped layers at temperatures T < or approximately 100 deg C. At elevated temperatures., along with secondary electron scattering on phonons, one should take into account their scattering on vacancies

  19. Analysis of borophosphosilicate glass layers on silicon wafers by X-ray emission from photon and electron excitation

    International Nuclear Information System (INIS)

    Elgersma, O.; Borstrok, J.J.M.

    1989-01-01

    Phosphorus and oxygen concentrations in the homogeneous layer of borosilicate glass (BPSG) deposited on Si-integrated circuits are determined by X-ray fluorescence from photon excitation. The X-ray emission from electron excitation in an open X-ray tube instrument yields a sufficiently precise determination of the boron content. The thickness of the layer can be derived from silicon Kα-fluorescence. A calibration model is proposed for photon as well as for electron excitation. The experimentally determined parameters in this model well agree with those derived from fundamental parameters for X-ray absorption and emission. The chemical surrounding of silicon affects strongly the peak profile of the silicon Kβ-emission. This enables to distinguish emission from the silicon atoms in the wafer and from the silicon atoms in the silicon oxide complexes of the BPSG-layer. (author)

  20. Dose-effect curves for electron-beam irradiation of some collection microbial strains

    International Nuclear Information System (INIS)

    Ferdes, O.; Dumitru, E.; Catargiu, L.; Ferdes, M.; Minea, R.; Oproiu, C.; Niculescu, A.

    1994-01-01

    There were electron-beam irradiated some microbial strains of B.subtilis ICA I-60 both in germination and in sporulated forms. The irradiation were performed at the IPTRD's electron accelerator at 6 MeV, and in the dose range between 0.1-5.0 kGy, at different dose-rate varying from 50 Gy/minute to 100 Gy/minute. The dosimetry was carried out by a PTW medical dosemeter. There were established the dose-effect relationships and curves, the inactivation dose (factor) and the optimum domain for electron-beam mutagenesis. There were obtained some mutant strains with 2-3.5 higher biosynthesis potential, which are in the IFC's collection. (Author)

  1. Inelastic electron and Raman scattering from the collective excitations in quantum wires: Zero magnetic field

    Directory of Open Access Journals (Sweden)

    Manvir S. Kushwaha

    2013-04-01

    Full Text Available The nanofabrication technology has taught us that an m-dimensional confining potential imposed upon an n-dimensional electron gas paves the way to a quasi-(n-m-dimensional electron gas, with m ⩽ n and 1 ⩽ n, m ⩽ 3. This is the road to the (semiconducting quasi-n dimensional electron gas systems we have been happily traversing on now for almost two decades. Achieving quasi-one dimensional electron gas (Q-1DEG [or quantum wire(s for more practical purposes] led us to some mixed moments in this journey: while the reduced phase space for the scattering led us believe in the route to the faster electron devices, the proximity to the 1D systems left us in the dilemma of describing it as a Fermi liquid or as a Luttinger liquid. No one had ever suspected the potential of the former, but it took quite a while for some to convince the others on the latter. A realistic Q-1DEG system at the low temperatures is best describable as a Fermi liquid rather than as a Luttinger liquid. In the language of condensed matter physics, a critical scrutiny of Q-1DEG systems has provided us with a host of exotic (electronic, optical, and transport phenomena unseen in their higher- or lower-dimensional counterparts. This has motivated us to undertake a systematic investigation of the inelastic electron scattering (IES and the inelastic light scattering (ILS from the elementary electronic excitations in quantum wires. We begin with the Kubo's correlation functions to derive the generalized dielectric function, the inverse dielectric function, and the Dyson equation for the dynamic screened potential in the framework of Bohm-Pines’ random-phase approximation. These fundamental tools then lead us to develop methodically the theory of IES and ILS for the Q-1DEG systems. As an application of the general formal results, which know no bounds regarding the subband occupancy, we compute the density of states, the Fermi energy, the full excitation spectrum [comprised of

  2. A Concept for Measuring Electron Distribution Functions Using Collective Thomson Scattering

    Science.gov (United States)

    Milder, A. L.; Froula, D. H.

    2017-10-01

    A.B. Langdon proposed that stable non-Maxwellian distribution functions are realized in coronal inertial confinement fusion plasmas via inverse bremsstrahlung heating. For Zvosc2 Zvosc2 vth2 > 1 , vth2 > 1 , the inverse bremsstrahlung heating rate is sufficiently fast to compete with electron-electron collisions. This process preferentially heats the subthermal electrons leading to super-Gaussian distribution functions. A method to identify the super-Gaussian order of the distribution functions in these plasmas using collective Thomson scattering will be proposed. By measuring the collective Thomson spectra over a range of angles the density, temperature and super-Gaussian order can be determined. This is accomplished by fitting non-Maxwellian distribution data with a super-Gaussian model; in order to match the density and electron temperature to within 10%, the super-Gaussian order must be varied. This material is based upon work supported by the Department of Energy National Nuclear Security Administration under Award Number DE-NA0001944.

  3. Device characteristics of organic light-emitting diodes based on electronic structure of the Ba-doped Alq3 layer.

    Science.gov (United States)

    Lim, Jong Tae; Kim, Kyung Nam; Yeom, Geun Young

    2009-12-01

    Organic light-emitting diodes (OLEDs) with a Ba-doped tris(8-quinolinolato)aluminum(III) (Alq3) layer were fabricated to reduce the barrier height for electron injection and to improve the electron conductivity. In the OLED consisting of glass/ITO/4,4',4"-tris[2-naphthylphenyl-1-phenylamino]triphenylamine (2-TNATA, 30 nm)/4,4'-bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl (NPB, 18 nm)/Alq3 (42 nm)/Ba-doped Alq3 (20 nm, x%: x = 0, 10, 25, and 50)/Al (100 nm), the device with the Alq3 layer doped with 10% Ba showed the highest light out-coupling characteristic. However, as the Ba dopant concentration was increased from 25% to 50%, this device characteristic was largely reduced. The characteristics of these devices were interpreted on the basis of the chemical reaction between Ba and Alq3 and the electron injection property by analyzing the electronic structure of the Ba-doped Alq3 layer. At a low Ba doping of 10%, mainly the Alq3 radical anion species was formed. In addition, the barrier height for electron injection in this layer was decreased to 0.6 eV, when compared to the pristine Alq3 layer. At a high Ba doping of 50%, the Alq3 molecules were severely decomposed. When the Ba dopant concentration was changed, the light-emitting characteristics of the devices were well coincided with the formation mechanism of Alq3 radical anion and Alq3 decomposition species.

  4. Operation voltage behavior of organic light emitting diodes with polymeric buffer layers doped by weak electron acceptor

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Hyeon Soo; Cho, Sang Hee [Department of Information Display and Advanced Display Research Center, Kyung Hee University, Seoul 130-701 (Korea, Republic of); Seo, Jaewon; Park, Yongsup [Department of Physics, Kyung Hee University, Seoul 130-701 (Korea, Republic of); Suh, Min Chul, E-mail: mcsuh@khu.ac.kr [Department of Information Display and Advanced Display Research Center, Kyung Hee University, Seoul 130-701 (Korea, Republic of)

    2013-11-01

    We present polymeric buffer materials based on poly[2,7-(9,9-dioctyl-fluorene)-co-(1,4-phenylene -((4-sec-butylphenyl)imino)-1,4-phenylene)] (TFB) for highly efficient solution processed organic light emitting diodes (OLEDs). Doped TFB with 9,10-dicyanoanthracene, a weak electron acceptor results in significant improvement of current flow and driving voltage. Maximum current- and power-efficiency value of 12.6 cd/A and 18.1 lm/W are demonstrated from phosphorescent red OLEDs with this doped polymeric anode buffer system. - Highlights: • Polymeric buffer materials for organic light emitting diodes (OLEDs). • Method to control hole conductivity of polymeric buffer layer in OLED device. • Enhanced current density of buffer layers upon 9,10-dicyanoanthracene (DCA) doping. • Comparison of OLED devices having polymeric buffer layer with or without DCA. • Effect on operating voltage by doping DCA in the buffer layer.

  5. A rest period does not affect in vitro storage properties in apheresis platelets collected from the buffy coat layer.

    Science.gov (United States)

    Wagner, Stephen J; Seetharaman, Shalini; Kurtz, James

    2012-11-01

    A previous study demonstrated that several in vitro storage properties of apheresis platelets (PLTs) that are isolated by sedimentation against the collection container and subsequently resuspended can benefit from a rest period before continuous agitation. This study examines whether the in vitro storage properties of apheresis PLTs isolated by collection from the buffy coat layer benefit from a rest period before agitation. Freshly collected apheresis PLTs (Trima, GambroBCT) were divided into five 60-mL aliquots. One aliquot was immediately placed on a flat-bed agitator; the other aliquots were held on a laboratory bench for 1, 2, 4, and 6 hours before continuous agitation. Samples were obtained on Days 1, 5, and 7 for standard in vitro PLT assays. The experiment was repeated 12 times. For each sampling day, no significant differences were observed in aliquots held with or without a rest period for any of the following PLT properties: PLT content, mean PLT volume, pH, pCO2, bicarbonate, glucose, lactate, hypotonic shock response, extent of shape change, aggregation, morphology, CD62P, CD63, and CD42b. Although regression analysis identified several in vitro properties whose mean levels appeared to improve with increasing length of the rest period, maximum differences in mean levels were small (coat layer do not benefit from a rest period. © 2012 American Association of Blood Banks.

  6. Electronic Field Data Collection in Support of Satellite-Based Food Security Monitoring in Tanzania

    Science.gov (United States)

    Nakalembe, C. L.; Dempewolf, J.; Justice, C. J.; Becker-Reshef, I.; Tumbo, S.; Maurice, S.; Mbilinyi, B.; Ibrahim, K.; Materu, S.

    2016-12-01

    In Tanzania agricultural extension agents traditionally collect field data on agriculture and food security on paper, covering most villages throughout the country. The process is expensive, slow and cumbersome and prone to data transcription errors when the data get entered at the district offices into electronic spreadsheets. Field data on the status and condition of agricultural crops, the population's nutritional status, food storage levels and other parameters are needed in near realtime for early warning to make critical but most importantly timely and appropriate decisions that are informed with verified data from the ground. With the ubiquitous distribution of cell phones, which are now used by the vast majority of the population in Tanzania including most farmers, new, efficient and cost-effective methods for field data collection have become available. Using smartphones and tablets data on crop conditions, pest and diseases, natural disasters and livelihoods can be collected and made available and easily accessible in near realtime. In this project we implemented a process for obtaining high quality electronic field data using the GeoODK application with a large network of field extension agents in Tanzania and Uganda. These efforts contribute to work being done on developing an advanced agriculture monitoring system for Tanzania, incorporating traditional data collection with satellite information and field data. The outcomes feed directly into the National Food Security Bulletin for Tanzania produced by the Ministry of Agriculture as well as a form a firm evidence base and field scale monitoring of the disaster risk financing in Uganda.

  7. Optimization of an Electron Transport Layer to Enhance the Power Conversion Efficiency of Flexible Inverted Organic Solar Cells

    Directory of Open Access Journals (Sweden)

    Lee Kang Hyuck

    2010-01-01

    Full Text Available Abstract The photovoltaic (PV performance of flexible inverted organic solar cells (IOSCs with an active layer consisting of a blend of poly(3-hexylthiophene and [6, 6]-phenyl C61-butlyric acid methyl ester was investigated by varying the thicknesses of ZnO seed layers and introducing ZnO nanorods (NRs. A ZnO seed layer or ZnO NRs grown on the seed layer were used as an electron transport layer and pathway to optimize PV performance. ZnO seed layers were deposited using spin coating at 3,000 rpm for 30 s onto indium tin oxide (ITO-coated polyethersulphone (PES substrates. The ZnO NRs were grown using an aqueous solution method at a low temperature (90°C. The optimized device with ZnO NRs exhibited a threefold increase in PV performance compared with that of a device consisting of a ZnO seed layer without ZnO NRs. Flexible IOSCs fabricated using ZnO NRs with improved PV performance may pave the way for the development of PV devices with larger interface areas for effective exciton dissociation and continuous carrier transport paths.

  8. Simple solution-processed titanium oxide electron transport layer for efficient inverted polymer solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Liang [CAS Key Laboratory of Bio-based Materials, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Shen, Wenfei [CAS Key Laboratory of Bio-based Materials, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101 (China); Institute of Hybrid Materials, Laboratory of New Fiber Materials and Modern Textile—The Growing Base for State Key Laboratory, Qingdao University, Qingdao 266071 (China); Chen, Weichao [CAS Key Laboratory of Bio-based Materials, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101 (China); Bao, Xichang, E-mail: baoxc@qibebt.ac.cn [CAS Key Laboratory of Bio-based Materials, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101 (China); Wang, Ning; Dou, Xiaowei; Han, Liangliang; Wen, Shuguang [CAS Key Laboratory of Bio-based Materials, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101 (China)

    2014-12-31

    Titanium oxide (TiO{sub X}) is an effective electron transport layer (ETL) in polymer solar cells (PSCs). We report efficient inverted PSCs with a simple solution-processed amorphous TiO{sub X} (s-TiO{sub X}) film as an ETL. The s-TiO{sub X} film with high light transmittance was prepared by spin-coating titanium (IV) isopropoxide isopropanol solution on indium tin oxide coated glass in inert and then placed in air under room temperature for 60 min. The introduction of s-TiO{sub X} ETL greatly improved the short circuit current density of the devices. PSCs based on poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester and poly(4,8-bis-alkyloxy-benzo[1,2-b:4,5-b′]dithiophene-alt-alkylcarbonyl -thieno[3,4-b]thiophene):[6,6]-phenyl- C71-butyric acid methyl ester using s-TiO{sub X} film as ETL shows high power conversion efficiency of 4.29% and 6.7% under the illumination of AM 1.5G, 100 mW/cm{sup 2}, which shows enhancements compared to the conventional PSCs with poly(styrenesulfonate)-doped poly(ethylenedioxythiophene) as anode buffer layer. In addition, the device exhibits good stability in a humid ambient atmosphere without capsulation. The results indicate that the annealing-free, simple solution processed s-TiO{sub X} film is an efficient ETL for high-performance PSCs. - Highlights: • High quality s-TiO{sub X} films were prepared by a simple, solution method without thermal treatment. • The s-TiO{sub X} films with high transmittance are very smooth. • The organic photovoltaic performance with s-TiO{sub X} film improved greatly and exhibited good stability. • The annealing-free, simple prepared s-TiO{sub X} film will be much compatible with flexible substrates.

  9. Thailand low and equatorial F 2-layer peak electron density and comparison with IRI-2007 model

    Science.gov (United States)

    Wichaipanich, N.; Supnithi, P.; Tsugawa, T.; Maruyama, T.

    2012-06-01

    Ionosonde measurements obtained at two Thailand ionospheric stations, namely Chumphon (10.72°N, 99.37°E, dip 3.0°N) and Chiang Mai (18.76°N, 98.93°E, dip 12.7°N) are used to examine the variation of the F 2-layer peak electron density ( N m F 2) which is derived from the F 2-layer critical frequency, f o f 2. Measured data from September 2004 to August 2005 (a period of low solar activity) are analyzed based on the diurnal and seasonal variation and then compared with IRI-2007 model predictions. Our results show that, in general, the diurnal and seasonal variations of the N m F 2 predicted by the IRI (URSI and CCIR options) model show a feature generally similar to the observed N m F 2. Underestimation mostly occurs in all seasons except during the September equinox and the December solstice at Chumphon, and the September equinox and the March equinox at Chiang Mai, when they overestimate those measured. The best agreement between observation and prediction occurs during the pre-sunrise to post-sunrise hours. The best agreement of the %PD values of both the options occurs during the March equinox, while the agreement is the worst during the September equinox. The N m F 2 values predicted by the CCIR option show a smaller range of deviation than the N m F 2 values predicted by the URSI option. During post-sunset to morning hours (around 21:00-09:00 LT), the observed N m F 2 at both stations are almost identical for the periods of low solar activity. However, during daytime, the observed N m F 2 at Chumphon is lower than that at Chiang Mai. The difference between these two stations can be explained by the equatorial ionospheric anomaly (EIA). These results are important for future improvements of the IRI model for N m F 2 over Southeast Asia, especially for the areas covered by Chumphon and Chiang Mai stations.

  10. Comparative Evaluation of Smear Layer and Debris on the Canal Walls prepared with a Combination of Hand and Rotary ProTaper Technique using Scanning Electron Microscope.

    Science.gov (United States)

    Kiran, S; Prakash, Sandeep; Siddharth, Pujari R; Saha, Supradip; Geojan, Naiza E; Ramachandran, Mookambika

    2016-07-01

    The effect of smear layer and debris on the success rate of endodontic treatment has not yet been definitely determined. So the present study was aimed to evaluate the amount of smear layer and debris on the canal walls prepared with a combination of hand and rotary ProTaper technique using NaOCl and ethylenediaminetetraacetic acid (EDTA) alternately as root canal irrigants using scanning electron microscope (SEM). Eighty intact freshly extracted human permanent mandibular premolar teeth were collected and randomly divided equally into four groups. In group I canals were prepared with hand K-Flexofiles; group II with rotary ProTaper instruments; group III with rotary ProTaper instruments and final instrumentation was done with hand K-Flexofile; group IV with rotary ProTaper instruments and final instrumentation was done with RC-Prep and irrigated with 1 mL of normal saline. In all groups canals were irrigated using NaOCl and EDTA alternately. After instrumentation, the teeth were prepared for SEM examination using five-score indices for debris and smear layer at coronal, middle, and apical third levels. Statistical analysis was performed using chi-square test (p hand files after automated rotary preparation could result in cleaner canal walls. Alternate irrigation with NaOCl and EDTA is effective in the removal of debris and smear layer in the coronal and middle level, but the effectiveness in the apical third is less.

  11. Characterization of light element impurities in ultrathin silicon-on-insulator layers by luminescence activation using electron irradiation

    International Nuclear Information System (INIS)

    Nakagawa-Toyota, Satoko; Tajima, Michio; Hirose, Kazuyuki; Ohshima, Takeshi; Itoh, Hisayoshi

    2009-01-01

    We analyzed light element impurities in ultrathin top Si layers of silicon-on-insulator (SOI) wafers by luminescence activation using electron irradiation. Photoluminescence (PL) analysis under ultraviolet (UV) light excitation was performed on various commercial SOI wafers after the irradiation. We detected the C-line related to a complex of interstitial carbon and oxygen impurities and the G-line related to a complex of interstitial and substitutional carbon impurities in the top Si layer with a thickness down to 62 nm after electron irradiation. We showed that there were differences in the impurity concentration depending on the wafer fabrication methods and also that there were variations in these concentrations in the respective wafers. Xenon ion implantation was used to activate top Si layers selectively so that we could confirm that the PL signal under the UV light excitation comes not from substrates but from top Si layers. The present method is a very promising tool to evaluate the light element impurities in top Si layers. (author)

  12. Collection and recycling of electronic scrap: A worldwide overview and comparison with the Brazilian situation

    International Nuclear Information System (INIS)

    Reis de Oliveira, Camila; Moura Bernardes, Andréa; Gerbase, Annelise Engel

    2012-01-01

    Highlights: ► Review of the different e-waste collection systems and recycling processes. ► We present the e-waste collection systems used in Europe and in the US. ► We present e-waste collection systems used in Asia and Latin America. ► E-waste management between developed and developing countries is very different. ► We made a comparison of the world situation to the current Brazilian reality. - Abstract: Recycling and the related issue of sustainable development are increasing in importance around the world. In Brazil, the new National Policy on Solid Wastes has prompted discussion on the future of electronic waste (e-waste). Over the last 10 years, different e-waste collection systems and recycling processes have been applied globally. This paper presents the systems used in different countries and compares the world situation to the current Brazilian reality. To establish a recycling process, it is necessary to organize efficient collection management. The main difficulty associated with the implementation of e-waste recycling processes in Brazil is the collection system, as its efficiency depends not only on the education and cooperation of the people but also on cooperation among industrial waste generators, distributors and the government. Over half a million waste pickers have been reported in Brazil and they are responsible for the success of metal scrap collection in the country. The country also has close to 2400 companies and cooperatives involved in recycling and scrap trading. On the other hand, the collection and recycling of e-waste is still incipient because e-wastes are not seen as valuable in the informal sector. The Brazilian challenge is therefore to organize a system of e-waste management including the informal sector without neglecting environmentally sound management principles.

  13. PARTICLE-IN-CELL SIMULATION OF A STRONG DOUBLE LAYER IN A NONRELATIVISTIC PLASMA FLOW: ELECTRON ACCELERATION TO ULTRARELATIVISTIC SPEEDS

    International Nuclear Information System (INIS)

    Dieckmann, Mark E.; Bret, Antoine

    2009-01-01

    Two charge- and current-neutral plasma beams are modeled with a one-dimensional particle-in-cell simulation. The beams are uniform and unbounded. The relative speed between both beams is 0.4c. One beam is composed of electrons and protons, and the other of protons and negatively charged oxygen (dust). All species have the temperature 9.1 keV. A Buneman instability develops between the electrons of the first beam and the protons of the second beam. The wave traps the electrons, which form plasmons. The plasmons couple energy into the ion acoustic waves, which trap the protons of the second beam. A structure similar to a proton phase-space hole develops, which grows through its interaction with the oxygen and the heated electrons into a rarefaction pulse. This pulse drives a double layer, which accelerates a beam of electrons to about 50 MeV, which is comparable to the proton kinetic energy. The proton distribution eventually evolves into an electrostatic shock. Beams of charged particles moving at such speeds may occur in the foreshock of supernova remnant (SNR) shocks. This double layer is thus potentially relevant for the electron acceleration (injection) into the diffusive shock acceleration by SNR shocks.

  14. Electronic structure and lattice dynamics at the interface of single layer FeSe and SrTiO3

    Science.gov (United States)

    Ahmed, Towfiq; Balatsky, Alexander; Zhu, Jian-Xin

    Recent discovery of high-temperature superconductivity with the superconducting energy gap opening at temperatures close to or above the liquid nitrogen boiling point in the single-layer FeSe grown on SrTiO3 has attracted significant interest. It suggests that the interface effects can be utilized to enhance the superconductivity. It has been shown recently that the coupling between the electrons in FeSe and vibrational modes at the interface play an important role. Here we report on a detailed study of electronic structure and lattice dynamics in the single-layer FeSe/SrTiO3 interface by using the state-of-art electronic structure method within the density functional theory. The nature of the vibrational modes at the interface and their coupling to the electronic degrees of freedom are analyzed. In addition, the effect of hole and electron doping in SrTiO3 on the electron-mode coupling strength is also considered. This work was carried out under the auspices of the National Nuclear Security Administration of the U.S. DOE at LANL under Contract No. DE-AC52-06NA25396, and was supported by the DOE Office of Basic Energy Sciences.

  15. Electron transfer through solid-electrolyte-interphase layers formed on Si anodes of Li-ion batteries

    International Nuclear Information System (INIS)

    Benitez, L.; Cristancho, D.; Seminario, J.M.; Martinez de la Hoz, J.M.; Balbuena, P.B.

    2014-01-01

    Solid-electrolyte interphase (SEI) films are formed on the electrode surfaces due to aggregation of products of reduction or oxidation of the electrolyte. These films may grow to thicknesses in the order of 50-100 nm and contain a variety of organic and inorganic products but their structure is not well defined. Although in some cases the films exert a passivating role, this is not always the case, and these phenomena are particularly more complex on Silicon anodes due to swelling and cracking of the electrode during lithiation and delithiation. Since the driving force for SEI growth is electron transfer, it is important to understand how electron transfer may keep occurring through the heterogeneous film once the bare electron surface is covered. Here we introduce a novel approach for studying electron transfer through model films and show preliminary results for the analysis of electron transfer through model composite interfacial systems integrated by electrode/SEI layer/electrolyte. Ab initio molecular dynamics simulations are used to identify deposition of SEI components, and a density functional theory/Green's function approach is utilized for characterizing electron transfer. Three degrees of lithiation are modeled for the electrodes, the SEI film is composed by LiF or Li 2 O, and the ethylene carbonate reduction is studied. An applied potential is used as driving force for the leakage current, which is evaluated as a function of the applied potential. Comparative analyses are done for LiF and Li 2 O model SEI layers

  16. Blue and white phosphorescent organic light emitting diode performance improvement by confining electrons and holes inside double emitting layers

    Energy Technology Data Exchange (ETDEWEB)

    Tsai, Yu-Sheng; Hong, Lin-Ann; Juang, Fuh-Shyang; Chen, Cheng-Yin

    2014-09-15

    In this research, complex emitting layers (EML) were fabricated using TCTA doping hole-transport material in the front half of a bipolar 26DCzPPy as well as PPT doping electron-transport material in the back half of 26DCzPPy. Blue dopant FIrpic was also mixed inside the complex emitting layer to produce a highly efficient blue phosphorescent organic light emitting diode (OLED). The hole and electron injection and carrier recombination rate were effectively increased. The fabricated complex emitting layers exhibited current efficiency of 42 cd/A and power efficiency of 30 lm/W when the luminance was 1000 cd/m{sup 2}, driving voltage was 4.4 V, and current density was 2.4 mA/cm{sup 2}. A white OLED component was then manufactured by doping red dopant [Os(bpftz){sub 2}(PPh{sub 2}Me){sub 2}] (Os) in proper locations. When the Os dopant was doped in between the complex emitting layers, excitons were effectively confined within, increasing the recombination rate and therefore reducing the color shift. The resulting Commission Internationale de L’Eclairage (CIE) coordinates shifted from 4 to 10 V is (Δx=−0.04, Δy=+0.01). The component had a current efficiency of 35.7 cd/A, a power efficiency of 24 lm/W, driving voltage of 4.6 V and a CIE{sub x,y} of (0.31,0.35) at a luminance of 1000 cd/m{sup 2}, with a maximum luminance of 15,600 cd/m{sup 2} at 10 V. Attaching an outcoupling enhancement film was applied to increase the luminance efficiency to 30 lm/W. - Highlights: • Used the complex double emitting layers. • Respectively doped hole and electron transport material in the bipolar host. • Electrons and holes are effectively confined within EMLs to produce excitons.

  17. Blue and white phosphorescent organic light emitting diode performance improvement by confining electrons and holes inside double emitting layers

    International Nuclear Information System (INIS)

    Tsai, Yu-Sheng; Hong, Lin-Ann; Juang, Fuh-Shyang; Chen, Cheng-Yin

    2014-01-01

    In this research, complex emitting layers (EML) were fabricated using TCTA doping hole-transport material in the front half of a bipolar 26DCzPPy as well as PPT doping electron-transport material in the back half of 26DCzPPy. Blue dopant FIrpic was also mixed inside the complex emitting layer to produce a highly efficient blue phosphorescent organic light emitting diode (OLED). The hole and electron injection and carrier recombination rate were effectively increased. The fabricated complex emitting layers exhibited current efficiency of 42 cd/A and power efficiency of 30 lm/W when the luminance was 1000 cd/m 2 , driving voltage was 4.4 V, and current density was 2.4 mA/cm 2 . A white OLED component was then manufactured by doping red dopant [Os(bpftz) 2 (PPh 2 Me) 2 ] (Os) in proper locations. When the Os dopant was doped in between the complex emitting layers, excitons were effectively confined within, increasing the recombination rate and therefore reducing the color shift. The resulting Commission Internationale de L’Eclairage (CIE) coordinates shifted from 4 to 10 V is (Δx=−0.04, Δy=+0.01). The component had a current efficiency of 35.7 cd/A, a power efficiency of 24 lm/W, driving voltage of 4.6 V and a CIE x,y of (0.31,0.35) at a luminance of 1000 cd/m 2 , with a maximum luminance of 15,600 cd/m 2 at 10 V. Attaching an outcoupling enhancement film was applied to increase the luminance efficiency to 30 lm/W. - Highlights: • Used the complex double emitting layers. • Respectively doped hole and electron transport material in the bipolar host. • Electrons and holes are effectively confined within EMLs to produce excitons

  18. Effect of Lanthanum-Strontium Cathode Current-Collecting Layer on the Performance of Anode Supported Type Planar Solid Oxide Fuel Cells

    Science.gov (United States)

    Park, Sun-Young; Ji, Ho-Il; Kim, Hae-Ryoung; Yoon, Kyung Joong; Son, Ji-Won; Lee, Hae-Weon; Lee, Jong-Ho

    2013-07-01

    We applied screen-printed (La,Sr)CoO3 as a current-collecting layer of planar type unit-cell for lower temperature operation of SOFCs. In this study the effects of the cathode current-collecting layer on the performance of unit cell and symmetric half cell were investigated via AC and DC polarization experiments. According to our investigation, appropriately controlled current collecting layer was very effective to enhance the unit cell performance by reducing not only the ohmic resistance but also the polarization losses of SOFC cathode.

  19. The effect of van der Waal's gap expansions on the surface electronic structure of layered topological insulators

    International Nuclear Information System (INIS)

    Eremeev, S V; Vergniory, M G; Chulkov, E V; Menshchikova, T V; Shaposhnikov, A A

    2012-01-01

    On the basis of relativistic ab initio calculations, we show that an expansion of van der Waal's (vdW) spacings in layered topological insulators caused by intercalation of deposited atoms, leads to the simultaneous emergence of parabolic and M-shaped two-dimensional electron gas (2DEG) bands as well as Rashba-splitting of the former states. The expansion of vdW spacings and the emergence of the 2DEG states localized in the (sub)surface region are also accompanied by a relocation of the topological surface state to the lower quintuple layers, that can explain the absence of inter-band scattering found experimentally. (paper)

  20. Electronic Libraries and the Future:Implications for Academic Libraries with East Asian Collections

    Directory of Open Access Journals (Sweden)

    Zhijia Shen、Susan Anthes

    2000-04-01

    Full Text Available

    頁次:4-17

    Academic libraries are stepping into uncharted territories with the advent of electronic books (ebooks and electronic libraries. This article provides an overview of the current status of both electronic books and libraries, including a description of a beta test of a new service netLibrary(tm at the University of Colorado at Boulder. Possible implications of new technology for various aspects of academic librarianship in the areas of acquisition, collection development, preservation, reference, circulation, interlibrary loan, and cataloging are discussed. Particular reference is given to East Asian collections. Benefits as well as liabilities are discussed. The authors raise issues regarding the potential of the new technology, and speculate on possible trends and areas for future research for academic librarians.

  1. Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

    Energy Technology Data Exchange (ETDEWEB)

    Li, X.; Nilsson, D.; Danielsson, Ö.; Pedersen, H.; Janzén, E.; Forsberg, U. [Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping 58183 (Sweden); Bergsten, J.; Rorsman, N. [Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg 41296 (Sweden)

    2015-12-28

    The creation of a semi insulating (SI) buffer layer in AlGaN/GaN High Electron Mobility Transistor (HEMT) devices is crucial for preventing a current path beneath the two-dimensional electron gas (2DEG). In this investigation, we evaluate the use of a gaseous carbon gas precursor, propane, for creating a SI GaN buffer layer in a HEMT structure. The carbon doped profile, using propane gas, is a two stepped profile with a high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) epitaxial layer closest to the substrate and a lower doped layer (3 × 10{sup 16 }cm{sup −3}) closest to the 2DEG channel. Secondary Ion Mass Spectrometry measurement shows a uniform incorporation versus depth, and no memory effect from carbon doping can be seen. The high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) does not influence the surface morphology, and a roughness root-mean-square value of 0.43 nm is obtained from Atomic Force Microscopy. High resolution X-ray diffraction measurements show very sharp peaks and no structural degradation can be seen related to the heavy carbon doped layer. HEMTs are fabricated and show an extremely low drain induced barrier lowering value of 0.1 mV/V, demonstrating an excellent buffer isolation. The carbon doped GaN buffer layer using propane gas is compared to samples using carbon from the trimethylgallium molecule, showing equally low leakage currents, demonstrating the capability of growing highly resistive buffer layers using a gaseous carbon source.

  2. Resource conservation approached with an appropriate collection and upgrade-remanufacturing for used electronic products.

    Science.gov (United States)

    Zlamparet, Gabriel I; Tan, Quanyin; Stevels, A B; Li, Jinhui

    2018-03-01

    This comparative research represents an example for a better conservation of resources by reducing the amount of waste (kg) and providing it more value under the umbrella of remanufacturing. The three discussed cases will expose three issues already addressed separately in the literature. The generation of waste electrical and electronic equipment (WEEE) interacts with the environmental depletion. In this article, we gave the examples of addressed issues under the concept of remanufacturing. Online collection opportunity eliminating classical collection, a business to business (B2B) implementation for remanufactured servers and medical devices. The material reuse (recycling), component sustainability, reuse (part harvesting), product reuse (after repair/remanufacturing) indicates the recovery potential using remanufacturing tool for a better conservation of resources adding more value to the products. Our findings can provide an overview of new system organization for the general collection, market potential and the technological advantages using remanufacturing instead of recycling of WEEE or used electrical and electronic equipment. Copyright © 2017. Published by Elsevier Ltd.

  3. Many-electron effect in the Si K-LL resonant Auger-electron spectroscopy spectra of the Si delta layer in GaAs

    International Nuclear Information System (INIS)

    Ohno, Masahide

    2006-01-01

    The Si K-LL resonant Auger-electron spectroscopy (RAES) spectra of silicon delta dopped layers in GaAs with very thin capping layers show both normal Auger decay and resonant Auger decay, when the core-level electron is excited to the conduction band. The resonant Auger peak kinetic energy (KE) shows no dispersion with photon energy, except when excited by the highest energy photons [M.D. Jackson, J.M.C. Thornton, D. Lewis, A. Robinson, M. Fahy, A. Aviary, P. Weightman, Phys. Rev. B71 (2005) 075313]. The RAES spectra are analyzed using a many-body theory. The presence of resonant Auger decay and no dispersion of resonant Auger peak KE with photon energy is explained in terms of the relaxation of a metastable excited core-hole state to a stable one on the time scale of core-hole decay. The excited electron in the conduction band either delocalizes rapidly leaving the ionized Si to decay by a normal Auger decay or drops to a state localized in the Si delta layer before the core-hole decays so that the RAES spectrum has both normal Auger decay and resonant Auger decay. As a result of the relaxation, the resonant Auger peak KE does not show any dispersion with photon energy. The variations with photon energy of the normal or resonant Auger peak intensity, KE, and width are explained in a consistent manner by a many-body theory

  4. High-resolution electron microscopy study of Ni81Fe19 film with Co33Cr67 buffer layer

    International Nuclear Information System (INIS)

    Xu, Q.Y.; Wang, Z.M.; Shen, F.; Du, Y.W.; Zhang, Z.

    2003-01-01

    The anisotropic magnetoresistance (AMR) in permalloy Ni 81 Fe 19 film deposited on a 1.2 nm Co 33 Cr 67 buffer layer was significantly enhanced. The high-resolution electron microscopy was used to study the microstructure of Ni 81 Fe 19 film with and without Co 33 Cr 67 buffer layer. It was found that Co 33 Cr 67 buffer layer can induce good (1 1 1) texture, while without Co 33 Cr 67 buffer layer, Ni 81 Fe 19 film show randomly oriented grain structure. The Δρ/ρ enhancement is attributed to the decrease in the resistivity ρ of the Ni 81 Fe 19 film due to the formation of the large (1 1 1) textured grains in Ni 81 Fe 19 film with Co 33 Cr 67 buffer layer. However, the surface roughness of substrate may limit the (1 1 1) textured grain size and induce additional grain boundaries in Ni 81 Fe 19 film with Co 33 Cr 67 buffer layer, limit the enhancement of the AMR effect

  5. Phase inversion and frequency doubling of reflection high-energy electron diffraction intensity oscillations in the layer-by-layer growth of complex oxides

    Science.gov (United States)

    Mao, Zhangwen; Guo, Wei; Ji, Dianxiang; Zhang, Tianwei; Gu, Chenyi; Tang, Chao; Gu, Zhengbin; Nie*, Yuefeng; Pan, Xiaoqing

    In situ reflection high-energy electron diffraction (RHEED) and its intensity oscillations are extremely important for the growth of epitaxial thin films with atomic precision. The RHEED intensity oscillations of complex oxides are, however, rather complicated and a general model is still lacking. Here, we report the unusual phase inversion and frequency doubling of RHEED intensity oscillations observed in the layer-by-layer growth of SrTiO3 using oxide molecular beam epitaxy. In contacts to the common understanding that the maximum(minimum) intensity occurs at SrO(TiO2) termination, respectively, we found that both maximum or minimum intensities can occur at SrO, TiO2, or even incomplete terminations depending on the incident angle of the electron beam, which raises a fundamental question if one can rely on the RHEED intensity oscillations to precisely control the growth of thin films. A general model including surface roughness and termination dependent mean inner potential qualitatively explains the observed phenomena, and provides the answer to the question how to prepare atomically and chemically precise surface/interfaces using RHEED oscillations for complex oxides. We thank National Basic Research Program of China (No. 11574135, 2015CB654901) and the National Thousand-Young-Talents Program.

  6. Efficiency enhancement of tandem organic light-emitting devices by a combined charge generation layer and organic n-type bis(ethylenedithio)-tetrathiafulvalene-doped electron transport layer

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Jin Taek; Kim, Dae Hun; Koh, Eun Im; Kim, Tae Whan

    2014-11-03

    While the operating voltage of the tandem organic light-emitting devices (OLEDs) with both an organic p-type 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile charge generation layer and a bis(ethylenedithio)-tetrathiafulvalene (BEDT-TTF)-doped 1,3,5-tris(N-phenylbenzimiazole-2-yl)benzene (TPBi) electron transport layer (ETL) was 1.3 V lower than that of the tandem OLEDs with a BEDT-TTF-undoped TPBi ETL. Luminance efficiency of the tandem OLEDs with a BEDT-TTF-doped TPBi ETL was 3.6 cd/A higher than that of the typical OLEDs. The increase in the luminance efficiency and the decrease in the operating voltage of the tandem OLEDs were attributed to improved electron injection due to the insertion of the BEDT-TTF-doped TPBi ETL. - Highlights: • Tandem organic light-emitting diodes (OLED) were fabricated. • OLED fabricated with an n-type bis(ethylenedithio)-tetrathiafulvalene. • Operating voltage of the tandem OLED was decreased from 19.8 to 18.5 V. • Luminance efficiency of the tandem OLED was increased from 31.8 to 35.4 cd/A. • Enhancement of the luminance efficiency in the tandem OLED was achieved.

  7. Efficiency enhancement of tandem organic light-emitting devices by a combined charge generation layer and organic n-type bis(ethylenedithio)-tetrathiafulvalene-doped electron transport layer

    International Nuclear Information System (INIS)

    Cho, Jin Taek; Kim, Dae Hun; Koh, Eun Im; Kim, Tae Whan

    2014-01-01

    While the operating voltage of the tandem organic light-emitting devices (OLEDs) with both an organic p-type 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile charge generation layer and a bis(ethylenedithio)-tetrathiafulvalene (BEDT-TTF)-doped 1,3,5-tris(N-phenylbenzimiazole-2-yl)benzene (TPBi) electron transport layer (ETL) was 1.3 V lower than that of the tandem OLEDs with a BEDT-TTF-undoped TPBi ETL. Luminance efficiency of the tandem OLEDs with a BEDT-TTF-doped TPBi ETL was 3.6 cd/A higher than that of the typical OLEDs. The increase in the luminance efficiency and the decrease in the operating voltage of the tandem OLEDs were attributed to improved electron injection due to the insertion of the BEDT-TTF-doped TPBi ETL. - Highlights: • Tandem organic light-emitting diodes (OLED) were fabricated. • OLED fabricated with an n-type bis(ethylenedithio)-tetrathiafulvalene. • Operating voltage of the tandem OLED was decreased from 19.8 to 18.5 V. • Luminance efficiency of the tandem OLED was increased from 31.8 to 35.4 cd/A. • Enhancement of the luminance efficiency in the tandem OLED was achieved

  8. Collective modes and dielectric and superconducting properties of electronic systems in confined geometries

    International Nuclear Information System (INIS)

    Ulloa, S.E.

    1984-01-01

    The dielectric response function of electronic systems in restricted geometries is studied as well as some of the consequences, using the self-consistent field method. These consequences include: 1) existence of multiple branches of longitudinal slender acoustic plasma oscillations (SAP) in thin wires; 2) a new superconductivity mechanism in thin wires via the exchange of SAPs by the electrons forming the Cooper pairs, and 3) reduction of the static screening offered by the valence electrons in a thin semiconductor film with respect to the bulk case. The SAP modes are collective modes shown to exist only in thin wires and neither in a bulk system nor in a thin film. They have linear dispersion relations with phase velocities smaller than the Fermi velocity of the system and are not Landau-damped. Numerical examples of these SAP modes in metallic and semiconductor wires are presented, showing that they sould be more easily observable in semiconductor structures. The SAP-induced mechanism of superconductivity is shown to possibly give higher critical temperature T/sub c/ than the phonon mechanism in thin wires. The author presents a semi-rigorous calculation of T/sub c/ and shows that by increasing the frequency of the SAP modes and having a small effective electron mass one would be able to increase T/sub c/. He also shows that the dielectric function of a thin semiconductor slab is wavenumber dependent even at long wavelengths and is not a constant as in the bulk case

  9. Collective laser light scattering from electron density fluctuations in fusion research plasmas (invited)

    International Nuclear Information System (INIS)

    Holzhauer, E.; Dodel, G.

    1990-01-01

    In magnetically confined plasmas density fluctuations of apparently turbulent nature with broad spectra in wave number and frequency space are observed which are thought to be the cause for anomalous energy and particle transport across the confining magnetic field. Collective laser light scattering has been used to study the nature of these fluctuations. Specific problems of scattering from fusion plasmas are addressed and illustrated with experimental results from the 119 μm far infrared laser scattering experiment operated on the ASDEX tokamak. Using the system in the heterodyne mode the direction of propagation with respect to the laboratory frame can be determined. Spatial resolution has bean improved by making use of the change in pitch of the total magnetic field across the minor plasma radius. Special emphasis is placed on the ohmic phase where a number of parameter variations including electron density, electron temperature, toroidal magnetic field, and filling gas were performed

  10. Shellac Films as a Natural Dielectric Layer for Enhanced Electron Transport in Polymer Field-Effect Transistors.

    Science.gov (United States)

    Baek, Seung Woon; Ha, Jong-Woon; Yoon, Minho; Hwang, Do-Hoon; Lee, Jiyoul

    2018-06-06

    Shellac, a natural polymer resin obtained from the secretions of lac bugs, was evaluated as a dielectric layer in organic field-effect transistors (OFETs) on the basis of donor (D)-acceptor (A)-type conjugated semiconducting copolymers. The measured dielectric constant and breakdown field of the shellac layer were ∼3.4 and 3.0 MV/cm, respectively, comparable with those of a poly(4-vinylphenol) (PVP) film, a commonly used dielectric material. Bottom-gate/top-contact OFETs were fabricated with shellac or PVP as the dielectric layer and one of three different D-A-type semiconducting copolymers as the active layer: poly(cyclopentadithiophene- alt-benzothiadiazole) with p-type characteristics, poly(naphthalene-bis(dicarboximide)- alt-bithiophene) [P(NDI2OD-T2)] with n-type characteristics, and poly(dithienyl-diketopyrrolopyrrole- alt-thienothiophene) [P(DPP2T-TT)] with ambipolar characteristics. The electrical characteristics of the fabricated OFETs were then measured. For all active layers, OFETs with a shellac film as the dielectric layer exhibited a better mobility than those with PVP. For example, the mobility of the OFET with a shellac dielectric and n-type P(NDI2OD-T2) active layer was approximately 2 orders of magnitude greater than that of the corresponding OFET with a PVP insulating layer. When P(DPP2T-TT) served as the active layer, the OFET with shellac as the dielectric exhibited ambipolar characteristics, whereas the corresponding OFET with the PVP dielectric operated only in hole-accumulation mode. The total density of states was analyzed using technology computer-aided design simulations. The results revealed that compared with the OFETs with PVP as the dielectric, the OFETs with shellac as the dielectric had a lower trap-site density at the polymer semiconductor/dielectric interface and much fewer acceptor-like trap sites acting as electron traps. These results demonstrate that shellac is a suitable dielectric material for D-A-type semiconducting

  11. COLLISIONLESS ELECTRON–ION SHOCKS IN RELATIVISTIC UNMAGNETIZED JET–AMBIENT INTERACTIONS: NON-THERMAL ELECTRON INJECTION BY DOUBLE LAYER

    International Nuclear Information System (INIS)

    Ardaneh, Kazem; Cai, Dongsheng; Nishikawa, Ken-Ichi

    2016-01-01

    The course of non-thermal electron ejection in relativistic unmagnetized electron–ion shocks is investigated by performing self-consistent particle-in-cell simulations. The shocks are excited through the injection of a relativistic jet into ambient plasma, leading to two distinct shocks (referred to as the trailing shock and leading shock) and a contact discontinuity. The Weibel-like instabilities heat the electrons up to approximately half of the ion kinetic energy. The double layers formed in the trailing and leading edges then accelerate the electrons up to the ion kinetic energy. The electron distribution function in the leading edge shows a clear, non-thermal power-law tail which contains ∼1% of electrons and ∼8% of the electron energy. Its power-law index is −2.6. The acceleration efficiency is ∼23% by number and ∼50% by energy, and the power-law index is −1.8 for the electron distribution function in the trailing edge. The effect of the dimensionality is examined by comparing the results of three-dimensional simulations with those of two-dimensional simulations. The comparison demonstrates that electron acceleration is more efficient in two dimensions.

  12. Intermittent electron density and temperature fluctuations and associated fluxes in the Alcator C-Mod scrape-off layer

    Science.gov (United States)

    Kube, R.; Garcia, O. E.; Theodorsen, A.; Brunner, D.; Kuang, A. Q.; LaBombard, B.; Terry, J. L.

    2018-06-01

    The Alcator C-Mod mirror Langmuir probe system has been used to sample data time series of fluctuating plasma parameters in the outboard mid-plane far scrape-off layer. We present a statistical analysis of one second long time series of electron density, temperature, radial electric drift velocity and the corresponding particle and electron heat fluxes. These are sampled during stationary plasma conditions in an ohmically heated, lower single null diverted discharge. The electron density and temperature are strongly correlated and feature fluctuation statistics similar to the ion saturation current. Both electron density and temperature time series are dominated by intermittent, large-amplitude burst with an exponential distribution of both burst amplitudes and waiting times between them. The characteristic time scale of the large-amplitude bursts is approximately 15 μ {{s}}. Large-amplitude velocity fluctuations feature a slightly faster characteristic time scale and appear at a faster rate than electron density and temperature fluctuations. Describing these time series as a superposition of uncorrelated exponential pulses, we find that probability distribution functions, power spectral densities as well as auto-correlation functions of the data time series agree well with predictions from the stochastic model. The electron particle and heat fluxes present large-amplitude fluctuations. For this low-density plasma, the radial electron heat flux is dominated by convection, that is, correlations of fluctuations in the electron density and radial velocity. Hot and dense blobs contribute only a minute fraction of the total fluctuation driven heat flux.

  13. Phase-coherent electron transport in (Zn, Al)Ox thin films grown by atomic layer deposition

    Science.gov (United States)

    Saha, D.; Misra, P.; Ajimsha, R. S.; Joshi, M. P.; Kukreja, L. M.

    2014-11-01

    A clear signature of disorder induced quantum-interference phenomena leading to phase-coherent electron transport was observed in (Zn, Al)Ox thin films grown by atomic layer deposition. The degree of static-disorder was tuned by varying the Al concentration through periodic incorporation of Al2O3 sub-monolayer in ZnO. All the films showed small negative magnetoresistance due to magnetic field suppressed weak-localization effect. The temperature dependence of phase-coherence length ( l φ ∝ T - 3 / 4 ), as extracted from the magnetoresistance measurements, indicated electron-electron scattering as the dominant dephasing mechanism. The persistence of quantum-interference at relatively higher temperatures up to 200 K is promising for the realization of ZnO based phase-coherent electron transport devices.

  14. Phase-coherent electron transport in (Zn, Al)O{sub x} thin films grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Saha, D., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Misra, P., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Ajimsha, R. S.; Joshi, M. P.; Kukreja, L. M. [Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India)

    2014-11-24

    A clear signature of disorder induced quantum-interference phenomena leading to phase-coherent electron transport was observed in (Zn, Al)O{sub x} thin films grown by atomic layer deposition. The degree of static-disorder was tuned by varying the Al concentration through periodic incorporation of Al{sub 2}O{sub 3} sub-monolayer in ZnO. All the films showed small negative magnetoresistance due to magnetic field suppressed weak-localization effect. The temperature dependence of phase-coherence length (l{sub φ}∝T{sup −3/4}), as extracted from the magnetoresistance measurements, indicated electron-electron scattering as the dominant dephasing mechanism. The persistence of quantum-interference at relatively higher temperatures up to 200 K is promising for the realization of ZnO based phase-coherent electron transport devices.

  15. Electron microscopy analyses and electrical properties of the layered Bi{sub 2}WO{sub 6} phase

    Energy Technology Data Exchange (ETDEWEB)

    Taoufyq, A. [Institut Matériaux Microélectronique et Nanosciences de Provence, IM2NP, UMR CNRS 7334, Université du Sud Toulon-Var, BP 20132, 83957, La Garde Cedex (France); Laboratoire Matériaux et Environnement LME, Faculté des Sciences, Université Ibn Zohr, BP 8106, Cité Dakhla, Agadir, Maroc (Morocco); Département d‘Études des Réacteurs, Laboratoire Dosimétrie Capteurs Instrumentation, CEA Cadarache (France); Société CESIGMA—Signals and Systems, 1576 Chemin de La Planquette, F 83 130 LA GARDE (France); Ait Ahsaine, H. [Laboratoire Matériaux et Environnement LME, Faculté des Sciences, Université Ibn Zohr, BP 8106, Cité Dakhla, Agadir, Maroc (Morocco); Patout, L. [Institut Matériaux Microélectronique et Nanosciences de Provence, IM2NP, UMR CNRS 7334, Université du Sud Toulon-Var, BP 20132, 83957, La Garde Cedex (France); Benlhachemi, A.; Ezahri, M. [Laboratoire Matériaux et Environnement LME, Faculté des Sciences, Université Ibn Zohr, BP 8106, Cité Dakhla, Agadir, Maroc (Morocco); and others

    2013-07-15

    The bismuth tungstate Bi{sub 2}WO{sub 6} was synthesized using a classical coprecipitation method followed by a calcination process at different temperatures. The samples were characterized by X-ray diffraction, simultaneous thermogravimetry and differential thermal analysis (TGA/DTA), scanning and transmission electron microscopy (SEM, TEM) analyses. The Rietveld analysis and electron diffraction clearly confirmed the Pca2{sub 1} non centrosymmetric space group previously proposed for this phase. The layers Bi{sub 2}O{sub 2}{sup 2+} and WO{sub 4}{sup 2−} have been directly evidenced from the HRTEM images. The electrical properties of Bi{sub 2}WO{sub 6} compacted pellets systems were determined from electrical impedance spectrometry (EIS) and direct current (DC) analyses, under air and argon, between 350 and 700 °C. The direct current analyses showed that the conduction observed from EIS analyses was mainly ionic in this temperature range, with a small electronic contribution. Electrical change above the transition temperature of 660 °C is observed under air and argon atmospheres. The strong conductivity increase observed under argon is interpreted in terms of formation of additional oxygen vacancies coupled with electron conduction. - Graphical abstract: High resolution transmission electron microscopy: inverse fast Fourier transform giving the layered structure of the Bi{sub 2}WO{sub 6} phase, with a representation of the cell dimensions (b and c vectors). The Bi{sub 2}O{sub 2}{sup 2+} and WO{sub 4}{sup 2−} sandwiches are visible in the IFFT image. - Highlights: • Using transmission electron microscopy, we visualize the layered structure of Bi{sub 2}WO{sub 6}. • Electrical analyses under argon gas show some increase in conductivity. • The phase transition at 660 °C is evidenced from electrical modification.

  16. Atomic layer deposition grown composite dielectric oxides and ZnO for transparent electronic applications

    International Nuclear Information System (INIS)

    Gieraltowska, S.; Wachnicki, L.; Witkowski, B.S.; Godlewski, M.; Guziewicz, E.

    2012-01-01

    In this paper, we report on transparent transistor obtained using laminar structure of two high-k dielectric oxides (hafnium dioxide, HfO 2 and aluminum oxide, Al 2 O 3 ) and zinc oxide (ZnO) layer grown at low temperature (60 °C–100 °C) using Atomic Layer Deposition (ALD) technology. Our research was focused on the optimization of technological parameters for composite layers Al 2 O 3 /HfO 2 /Al 2 O 3 for thin film transistor structures with ZnO as a channel and a gate layer. We elaborate on the ALD growth of these oxides, finding that the 100 nm thick layers of HfO 2 and Al 2 O 3 exhibit fine surface flatness and required amorphous microstructure. Growth parameters are optimized for the monolayer growth mode and maximum smoothness required for gating.

  17. Model of Optimal Collision Avoidance Manoeuvre on the Basis of Electronic Data Collection

    Directory of Open Access Journals (Sweden)

    Jelenko Švetak

    2005-11-01

    Full Text Available The results of the data analyses show that accidents mostlyinclude damages to the ship's hull and collisions. Generally allaccidents of ships can be divided into two basic categories.First, accidents in which measures for damage control shouldbe taken immediately, and second, those which require a littlemore patient reaction. The very fact that collisions belong to thefirst category provided the incentive for writing the current paper.The proposed model of optimal collision avoidance manoeuvreof ships on the basis of electronic data collection wasmade by means of the navigation simulator NTPRO- 1000,Transas manufacturer, Russian Federation.

  18. FOKKER-PLANCK ANALYSIS OF TRANSVERSE COLLECTIVE INSTABILITIES IN ELECTRON STORAGE RINGS

    Energy Technology Data Exchange (ETDEWEB)

    Lindberg, R. R.

    2017-06-25

    We analyze single bunch transverse instabilities due to wakefields using a Fokker-Planck model. We expand on the work of Suzuki [1], writing out the linear matrix equation including chromaticity, both dipolar and quadrupolar transverse wakefields, and the effects of damping and diffusion due to the synchrotron radiation. The eigenvalues and eigenvectors determine the collective stability of the beam, and we show that the predicted threshold current for transverse instability and the profile of the unstable agree well with tracking simulations. In particular, we find that predicting collective stability for high energy electron beams at moderate to large values of chromaticity requires the full Fokker-Planck analysis to properly account for the effects of damping and diffusion due to synchrotron radiation.

  19. Role of the electron blocking layer in the graded-index separate confinement heterostructure nitride laser diodes

    Science.gov (United States)

    Bojarska, Agata; Goss, Jakub; Stanczyk, Szymon; Makarowa, Irina; Schiavon, Dario; Czernecki, Robert; Suski, Tadeusz; Perlin, Piotr

    2018-04-01

    In this work, we investigate the role of the electron blocking layer (EBL) in laser diodes based on a graded index separate confinement heterostructure. We compare two sets of devices with very different EBL aluminum composition (3% and 12%) and design (graded and superlattice). The results of electro-optical characterization of these laser diodes reveal surprisingly modest role of electron blocking layer composition in determination of the threshold current and the differential efficiency values. However, EBL structure influences the operating voltage, which is decreased for devices with lower EBL and superlattice EBL. We observe also the differences in the thermal stability of devices - characteristic temperature is lower for lasers with 3% Al in EBL.

  20. Many-body correlation effects in the spatially separated electron and hole layers in the coupled quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Babichenko, V.S. [RRC Kurchatov Institute, Kurchatov Sq., 1, 123182 Moscow (Russian Federation); Polishchuk, I.Ya., E-mail: iyppolishchuk@gmail.com [RRC Kurchatov Institute, Kurchatov Sq., 1, 123182 Moscow (Russian Federation); Moscow Institute of Physics and Technology, 141700, 9, Institutskii per., Dolgoprudny, Moscow Region (Russian Federation)

    2014-11-15

    The many-body correlation effects in the spatially separated electron and hole layers in the coupled quantum wells are investigated. A special case of the many-component electron–hole system is considered. It is shown that if the hole mass is much greater than the electron mass, the negative correlation energy is mainly determined by the holes. The ground state of the system is found to be the 2D electron–hole liquid with the energy smaller than the exciton phase. It is shown that the system decays into the spatially separated neutral electron–hole drops if the initially created charge density in the layers is smaller than the certain critical value n{sub eq}.

  1. Effects of dust polarity and nonextensive electrons on the dust-ion acoustic solitons and double layers in earth atmosphere

    Science.gov (United States)

    Ghobakhloo, Marzieh; Zomorrodian, Mohammad Ebrahim; Javidan, Kurosh

    2018-05-01

    Propagation of dustion acoustic solitary waves (DIASWs) and double layers is discussed in earth atmosphere, using the Sagdeev potential method. The best model for distribution function of electrons in earth atmosphere is found by fitting available data on different distribution functions. The nonextensive function with parameter q = 0.58 provides the best fit on observations. Thus we analyze the propagation of localized waves in an unmagnetized plasma containing nonextensive electrons, inertial ions, and negatively/positively charged stationary dust. It is found that both compressive and rarefactive solitons as well as double layers exist depending on the sign (and the value) of dust polarity. Characters of propagated waves are described using the presented model.

  2. Tuning the two-dimensional electron liquid at oxide interfaces by buffer-layer-engineered redox reactions

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Green, Robert J.; Sutarto, Ronny

    2017-01-01

    Polar discontinuities and redox reactions provide alternative paths to create two-dimensional electron liquids (2DELs) at oxide interfaces. Herein, we report high mobility 2DELs at interfaces involving SrTiO3 (STO) achieved using polar La7/8Sr1/8MnO3 (LSMO) buffer layers to manipulate both...... polarities and redox reactions from disordered overlayers grown at room temperature. Using resonant x-ray reflectometry experiments, we quantify redox reactions from oxide overlayers on STO as well as polarity induced electronic reconstruction at epitaxial LSMO/STO interfaces. The analysis reveals how...... these effects can be combined in a STO/LSMO/disordered film trilayer system to yield high mobility modulation doped 2DELs, where the buffer layer undergoes a partial transformation from perovskite to brownmillerite structure. This uncovered interplay between polar discontinuities and redox reactions via buffer...

  3. Improved electron injection into Alq{sub 3} based devices using a thin Erq{sub 3} injection layer

    Energy Technology Data Exchange (ETDEWEB)

    Shakya, P; Desai, P; Gillin, W P [Department of Physics, Queen Mary, University of London, Mile End Road, London, E1 4NS (United Kingdom); Curry, R J [Advanced Technology Institute, School of Electronics and Physical Sciences, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom)

    2008-04-21

    The role of a thin erbium(III) tris(8-hydroxyquinoline) (Erq{sub 3}) interface layer on the electron injection into aluminium(III) tris(8-hydroxyquinoline) (Alq{sub 3}) based organic light emitting devices (OLEDs) has been investigated. It has been shown that the use of a 40 A interface layer can increase the efficiency of a simple Alq{sub 3} OLED with an Al cathode to a level comparable with other, well established, high-efficiency cathodes such as LiF/Al. We also show that, despite the bulk HOMO and LUMO positions for Erq{sub 3} being little different from those for Alq{sub 3}, the presence of an interfacial layer makes the devices turn-on voltage almost independent of the cathode metal. This is explained by there being a vacuum level shift for Erq{sub 3} which is dependent on the work function of the cathode metal.

  4. Picosecond kinetics of the electron-hole layers formation in wide-bandgap II-VI type-II heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Filatov, E.V.; Zaitsev, S.V.; Tartakovskii, I.I.; Maksimov, A.A. [Institute of Solid State Physics, Russian Academy of Sciences, 142432 Chernogolovka, Moscow region (Russian Federation); Yakovlev, D.R. [A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Experimentelle Physik II, Technische Universitaet Dortmund (Germany); Waag, A. [Institute of Semiconductor Technology, Braunschweig Technical University, 38106 Braunschweig (Germany)

    2010-06-15

    Considerable slowdown of luminescence kinetics of the direct optical transition was discovered in ZnSe/BeTe type-II heterostructures under high levels of optical pumping. The effect is attributed to forming of a potential barrier for holes in the ZnSe layer due to band bending at high densities of spatially separated carriers. That results in a longer time of the photoexcited holes energy relaxation to their ground state in the BeTe layer. The decrease of overlapping of electron and hole wavefunctions in the ZnSe layer in thick ZnSe/BeTe structures at high levels of optical excitation reveals an additional important effect, that leads to sufficient retardation of radiative recombination time for photoexcited carriers (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Effect of Mg doping in ZnO buffer layer on ZnO thin film devices for electronic applications

    Science.gov (United States)

    Giri, Pushpa; Chakrabarti, P.

    2016-05-01

    Zinc Oxide (ZnO) thin films have been grown on p-silicon (Si) substrate using magnesium doped ZnO (Mg: ZnO) buffer layer by radio-frequency (RF) sputtering method. In this paper, we have optimized the concentration of Mg (0-5 atomic percent (at. %)) ZnO buffer layer to examine its effect on ZnO thin film based devices for electronic and optoelectronic applications. The crystalline nature, morphology and topography of the surface of the thin film have been characterized. The optical as well as electrical properties of the active ZnO film can be tailored by varying the concentration of Mg in the buffer layer. The crystallite size in the active ZnO thin film was found to increase with the Mg concentration in the buffer layer in the range of 0-3 at. % and subsequently decrease with increasing Mg atom concentration in the ZnO. The same was verified by the surface morphology and topography studies carried out with scanning electron microscope (SEM) and atomic electron microscopy (AFM) respectively. The reflectance in the visible region was measured to be less than 80% and found to decrease with increase in Mg concentration from 0 to 3 at. % in the buffer region. The optical bandgap was initially found to increase from 3.02 eV to 3.74 eV by increasing the Mg content from 0 to 3 at. % but subsequently decreases and drops down to 3.43 eV for a concentration of 5 at. %. The study of an Au:Pd/ZnO Schottky diode reveals that for optimum doping of the buffer layer the device exhibits superior rectifying behavior. The barrier height, ideality factor, rectification ratio, reverse saturation current and series resistance of the Schottky diode were extracted from the measured current voltage (I-V) characteristics.

  6. Improvement in the photocurrent collection due to enhanced absorption of light by synthesizing staggered layers of silver nanoclusters in silicon

    International Nuclear Information System (INIS)

    Dhoubhadel, Mangal S.; Lakshantha, Wickramaarachchige J.; Rout, Bibhudutta; McDaniel, Floyd D.; Lightbourne, Sherard; D’Souza, Francis

    2015-01-01

    The quest for increased efficiency of solar cells has driven the research in synthesizing photovoltaic cells involving Si based materials. The efficiency of solar cells involving crystalline Si is stalled around 25% for the last decade. Recently Shi et al. had shown that light trapping can be enhanced by fabricating double layers of Ag nanoparticles in silicon based materials. The light trapping is critically important in a photo devices such as solar cells in order to increase light absorption and efficiency. In the present work, we report enhancement in the absorption of light in Ag ion implanted Si substrates. Multiple low energies Ag ions, ranging from ∼80 keV to ∼30 keV, with different fluences ranging from ∼1 × 10 16 to ∼1 × 10 17 atoms/cm 2 were sequentially implanted into commercially available Si (100) substrates followed by post-thermal annealing to create different sizes of Ag nanoclusters (NC) at different depths in the top 100 nm of the Si. The absorbance of light is increased in Ag implanted Si with a significant increase in the current collection in I-V (current-voltage) photo switching measurements. The experimental photovoltaic cells fabricated with the Ag-implanted Si samples were optically characterized under AM (air mass) 1.5 solar radiation conditions (∼1.0 kW/m 2 ). An enhancement in the charge collection were measured in the annealed samples, where prominent Ag NCs were formed in the Si matrix compared to the as-implanted samples with amorphous layers. We believe the enhancement of the photo-current density from the samples with Ag NC is due to the improvement of efficiency of charge collection of e − -h + pairs produced by the incident light

  7. Small angle X-ray scattering and transmission electron microscopy study of the Lactobacillus brevis S-layer protein

    Energy Technology Data Exchange (ETDEWEB)

    Jaeaeskelaeinen, Pentti [Department of Biomedical Engineering and Computational Science, PO Box 2200, FI-02015 Aalto University School of Science and Technology (Finland); Engelhardt, Peter [Haartman Institute, Department of Pathology, PO Box 21, FIN-00014 University of Helsinki (Finland); Hynoenen, Ulla; Palva, Airi [Department of Basic Veterinary Sciences, Division of Microbiology, FIN-00014 University of Helsinki (Finland); Torkkeli, Mika; Serimaa, Ritva, E-mail: ritva.serimaa@helsinki.f [Department of Physics, POB 64, 00014 University of Helsinki (Finland)

    2010-10-01

    The structure of self-assembly domain containing recombinant truncation mutants of Lactobacillus brevis surface layer protein SlpA in aqueous solution was studied using small-angle X-ray scattering and transmission electron microscopy. The proteins were found out to interact with each other forming stable globular oligomers of about 10 monomers. The maximum diameter of the oligomers varied between 75 A and 435 A.

  8. Atomic-scale observation of structural and electronic orders in the layered compound ?-RuCl3

    OpenAIRE

    Ziatdinov, M.; Banerjee, A.; Maksov, A.; Berlijn, T.; Zhou, W.; Cao, H. B.; Yan, J.-Q.; Bridges, C. A.; Mandrus, D. G.; Nagler, S. E.; Baddorf, A. P.; Kalinin, S. V.

    2016-01-01

    A pseudospin-1/2 Mott phase on a honeycomb lattice is proposed to host the celebrated two-dimensional Kitaev model which has an elusive quantum spin liquid ground state, and fascinating physics relevant to the development of future templates towards topological quantum bits. Here we report a comprehensive, atomically resolved real-space study by scanning transmission electron and scanning tunnelling microscopies on a novel layered material displaying Kitaev physics, ?-RuCl3. Our local crystal...

  9. Wave function of an electron infinitely moving in the field of a one-dimensional layered structure

    International Nuclear Information System (INIS)

    Khachatrian, A.Zh.; Andreasyan, A.G.; Mgerian, G.G.; Badalyan, V.D.

    2003-01-01

    A method for finding the wave function of an electron infinitely moving in the field of an arbitrary layered structure bordered on both sides with two different semi infinite media is proposed. It is shown that this problem in the general form can be reduced to the solution of some system of linear finite-difference equations. The proposed approach is discussed in detail for the case of a periodic structure

  10. Role of electron back action on photons in hybridizing double-layer graphene plasmons with localized photons

    Science.gov (United States)

    Huang, Danhong; Iurov, Andrii; Gumbs, Godfrey

    2018-05-01

    In this paper, we deal with the electromagnetic coupling between an incident surface-plasmon-polariton wave and relativistic electrons in two graphene layers. Our previous investigation was limited to single-layer graphene (Iurov et al 2017 Phys. Rev. B 96 081408). However, the present work, is both an expanded and extended version of this previous Phys. Rev. B paper after having included very detailed theoretical formalisms and extensive comparisons of results from either one or two graphene layers embedded in a dielectric medium. The additional retarded Coulomb interaction between two graphene layers will compete with the coupling between the single graphene layer and the surface of a conductor. Consequently, some distinctive features, such as triply-hybridized absorption peaks and a new acoustic-like graphene plasmon mode within the anticrossing region, have been found for the double-layer graphene system. Physically, our theory is self-consistent, in comparison with a commonly adopted perturbative theory, for studying hybrid light-plasmon modes and the electron back action on photons. Instead of usual radiation or grating-deflection field coupling, a surface-plasmon-polariton localized field coupling is introduced with completely different dispersion relations for radiative (small wave numbers) and evanescent (large wave numbers) field modes. Technically, the exactly calculated effective scattering matrix for this theory can be employed to construct an effective-medium theory in order to improve the accuracy of the well-known finite-difference time-domain method for solving Maxwell’s equations numerically. Practically, the predicted triply-hybridized absorption peaks can excite polaritons only, giving rise to a possible polariton-condensation based laser.

  11. Three-input gate logic circuits on chemically assembled single-electron transistors with organic and inorganic hybrid passivation layers.

    Science.gov (United States)

    Majima, Yutaka; Hackenberger, Guillaume; Azuma, Yasuo; Kano, Shinya; Matsuzaki, Kosuke; Susaki, Tomofumi; Sakamoto, Masanori; Teranishi, Toshiharu

    2017-01-01

    Single-electron transistors (SETs) are sub-10-nm scale electronic devices based on conductive Coulomb islands sandwiched between double-barrier tunneling barriers. Chemically assembled SETs with alkanethiol-protected Au nanoparticles show highly stable Coulomb diamonds and two-input logic operations. The combination of bottom-up and top-down processes used to form the passivation layer is vital for realizing multi-gate chemically assembled SET circuits, as this combination enables us to connect conventional complementary metal oxide semiconductor (CMOS) technologies via planar processes. Here, three-input gate exclusive-OR (XOR) logic operations are demonstrated in passivated chemically assembled SETs. The passivation layer is a hybrid bilayer of self-assembled monolayers (SAMs) and pulsed laser deposited (PLD) aluminum oxide (AlO[Formula: see text]), and top-gate electrodes were prepared on the hybrid passivation layers. Top and two-side-gated SETs showed clear Coulomb oscillation and diamonds for each of the three available gates, and three-input gate XOR logic operation was clearly demonstrated. These results show the potential of chemically assembled SETs to work as logic devices with multi-gate inputs using organic and inorganic hybrid passivation layers.

  12. An electronic specimen collection protocol schema (eSCPS). Document architecture for specimen management and the exchange of specimen collection protocols between biobanking information systems.

    Science.gov (United States)

    Eminaga, O; Semjonow, A; Oezguer, E; Herden, J; Akbarov, I; Tok, A; Engelmann, U; Wille, S

    2014-01-01

    The integrity of collection protocols in biobanking is essential for a high-quality sample preparation process. However, there is not currently a well-defined universal method for integrating collection protocols in the biobanking information system (BIMS). Therefore, an electronic schema of the collection protocol that is based on Extensible Markup Language (XML) is required to maintain the integrity and enable the exchange of collection protocols. The development and implementation of an electronic specimen collection protocol schema (eSCPS) was performed at two institutions (Muenster and Cologne) in three stages. First, we analyzed the infrastructure that was already established at both the biorepository and the hospital information systems of these institutions and determined the requirements for the sufficient preparation of specimens and documentation. Second, we designed an eSCPS according to these requirements. Finally, a prospective study was conducted to implement and evaluate the novel schema in the current BIMS. We designed an eSCPS that provides all of the relevant information about collection protocols. Ten electronic collection protocols were generated using the supplementary Protocol Editor tool, and these protocols were successfully implemented in the existing BIMS. Moreover, an electronic list of collection protocols for the current studies being performed at each institution was included, new collection protocols were added, and the existing protocols were redesigned to be modifiable. The documentation time was significantly reduced after implementing the eSCPS (5 ± 2 min vs. 7 ± 3 min; p = 0.0002). The eSCPS improves the integrity and facilitates the exchange of specimen collection protocols in the existing open-source BIMS.

  13. Graphene–cyclodextrin–cytochrome c layered assembly with improved electron transfer rate and high supramolecular recognition capability

    Energy Technology Data Exchange (ETDEWEB)

    Gong, Cheng-Bin; Guo, Cong-Cong; Jiang, Dan; Tang, Qian, E-mail: qiantang@swu.edu.cn; Liu, Chang-Hua; Ma, Xue-Bing

    2014-06-01

    This study aimed to develop a new graphene-based layered assembly, named graphene–cyclodextrin–cytochrome c with improved electron transfer rate. This assembly has combined high conductivity of graphene nanosheets (GNs), selectively binding properties and electronegativity of cyclodextrins (CDs), as well as electropositivity of cytochrome c (Cyt c). This assembly can also mimic the confined environments of the intermembrane space of mitochondria. A β-cyclodextrin (β-CD) functionalized GN (GN–CD) assembly was initially prepared by a simple wet-chemical strategy, i.e., in situ thermal reduction of graphene oxide with hydrazine hydrate in the presence of β-CD. Cyt c was then intercalated to the GN–CD assembly to form a layered self-assembled structure, GN–CD–Cyt c, through electrostatic interaction. Compared with GNs and GN–CD, GN–CD–Cyt c assembly displayed improved electron transfer rate and high supramolecular recognition capability toward six probe molecules. - Highlights: • A new tertiary layered assembly named GN–CD–Cyt c was prepared. • Compared with GNs and GN–CD, GN–CD–Cyt c shows improved electron transfer rate. • GN–CD–Cyt c displays high supramolecular recognition capability.

  14. Synthesis of ultrathin polymer insulating layers by initiated chemical vapour deposition for low-power soft electronics.

    Science.gov (United States)

    Moon, Hanul; Seong, Hyejeong; Shin, Woo Cheol; Park, Won-Tae; Kim, Mincheol; Lee, Seungwon; Bong, Jae Hoon; Noh, Yong-Young; Cho, Byung Jin; Yoo, Seunghyup; Im, Sung Gap

    2015-06-01

    Insulating layers based on oxides and nitrides provide high capacitance, low leakage, high breakdown field and resistance to electrical stresses when used in electronic devices based on rigid substrates. However, their typically high process temperatures and brittleness make it difficult to achieve similar performance in flexible or organic electronics. Here, we show that poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane) (pV3D3) prepared via a one-step, solvent-free technique called initiated chemical vapour deposition (iCVD) is a versatile polymeric insulating layer that meets a wide range of requirements for next-generation electronic devices. Highly uniform and pure ultrathin films of pV3D3 with excellent insulating properties, a large energy gap (>8 eV), tunnelling-limited leakage characteristics and resistance to a tensile strain of up to 4% are demonstrated. The low process temperature, surface-growth character, and solvent-free nature of the iCVD process enable pV3D3 to be grown conformally on plastic substrates to yield flexible field-effect transistors as well as on a variety of channel layers, including organics, oxides, and graphene.

  15. Graphene–cyclodextrin–cytochrome c layered assembly with improved electron transfer rate and high supramolecular recognition capability

    International Nuclear Information System (INIS)

    Gong, Cheng-Bin; Guo, Cong-Cong; Jiang, Dan; Tang, Qian; Liu, Chang-Hua; Ma, Xue-Bing

    2014-01-01

    This study aimed to develop a new graphene-based layered assembly, named graphene–cyclodextrin–cytochrome c with improved electron transfer rate. This assembly has combined high conductivity of graphene nanosheets (GNs), selectively binding properties and electronegativity of cyclodextrins (CDs), as well as electropositivity of cytochrome c (Cyt c). This assembly can also mimic the confined environments of the intermembrane space of mitochondria. A β-cyclodextrin (β-CD) functionalized GN (GN–CD) assembly was initially prepared by a simple wet-chemical strategy, i.e., in situ thermal reduction of graphene oxide with hydrazine hydrate in the presence of β-CD. Cyt c was then intercalated to the GN–CD assembly to form a layered self-assembled structure, GN–CD–Cyt c, through electrostatic interaction. Compared with GNs and GN–CD, GN–CD–Cyt c assembly displayed improved electron transfer rate and high supramolecular recognition capability toward six probe molecules. - Highlights: • A new tertiary layered assembly named GN–CD–Cyt c was prepared. • Compared with GNs and GN–CD, GN–CD–Cyt c shows improved electron transfer rate. • GN–CD–Cyt c displays high supramolecular recognition capability

  16. The effects of electron and hole transport layer with the electrode work function on perovskite solar cells

    Science.gov (United States)

    Deng, Quanrong; Li, Yiqi; Chen, Lian; Wang, Shenggao; Wang, Geming; Sheng, Yonglong; Shao, Guosheng

    2016-09-01

    The effects of electron and hole transport layer with the electrode work function on perovskite solar cells with the interface defects were simulated by using analysis of microelectronic and photonic structures-one-dimensional (AMPS-1D) software. The simulation results suggest that TiO2 electron transport layer provides best device performance with conversion efficiency of 25.9% compared with ZnO and CdS. The threshold value of back electrode work function for Spiro-OMeTAD, NiO, CuI and Cu2O hole transport layer are calculated to be 4.9, 4.8, 4.7 and 4.9 eV, respectively, to reach the highest conversion efficiency. The mechanisms of device physics with various electron and hole transport materials are discussed in details. The device performance deteriorates gradually as the increased density of interface defects located at ETM/absorber or absorber/HTM. This research results can provide helpful guidance for materials and metal electrode choice for perovskite solar cells.

  17. Electro-spray deposition of a mesoporous TiO2 charge collection layer: toward large scale and continuous production of high efficiency perovskite solar cells.

    Science.gov (United States)

    Kim, Min-cheol; Kim, Byeong Jo; Yoon, Jungjin; Lee, Jin-wook; Suh, Dongchul; Park, Nam-gyu; Choi, Mansoo; Jung, Hyun Suk

    2015-12-28

    The spin-coating method, which is widely used for thin film device fabrication, is incapable of large-area deposition or being performed continuously. In perovskite hybrid solar cells using CH(3)NH(3)PbI(3) (MAPbI(3)), large-area deposition is essential for their potential use in mass production. Prior to replacing all the spin-coating process for fabrication of perovskite solar cells, herein, a mesoporous TiO(2) electron-collection layer is fabricated by using the electro-spray deposition (ESD) system. Moreover, impedance spectroscopy and transient photocurrent and photovoltage measurements reveal that the electro-sprayed mesoscopic TiO(2) film facilitates charge collection from the perovskite. The series resistance of the perovskite solar cell is also reduced owing to the highly porous nature of, and the low density of point defects in, the film. An optimized power conversion efficiency of 15.11% is achieved under an illumination of 1 sun; this efficiency is higher than that (13.67%) of the perovskite solar cell with the conventional spin-coated TiO(2) films. Furthermore, the large-area coating capability of the ESD process is verified through the coating of uniform 10 × 10 cm(2) TiO(2) films. This study clearly shows that ESD constitutes therefore a viable alternative for the fabrication of high-throughput, large-area perovskite solar cells.

  18. Diurnal patterns of salivary cortisol and DHEA using a novel collection device: electronic monitoring confirms accurate recording of collection time using this device.

    Science.gov (United States)

    Laudenslager, Mark L; Calderone, Jacqueline; Philips, Sam; Natvig, Crystal; Carlson, Nichole E

    2013-09-01

    The accurate indication of saliva collection time is important for defining the diurnal decline in salivary cortisol as well as characterizing the cortisol awakening response. We tested a convenient and novel collection device for collecting saliva on strips of filter paper in a specially constructed booklet for determination of both cortisol and DHEA. In the present study, 31 healthy adults (mean age 43.5 years) collected saliva samples four times a day on three consecutive days using filter paper collection devices (Saliva Procurement and Integrated Testing (SPIT) booklet) which were maintained during the collection period in a large plastic bottle with an electronic monitoring cap. Subjects were asked to collect saliva samples at awakening, 30 min after awakening, before lunch and 600 min after awakening. The time of awakening and the time of collection before lunch were allowed to vary by each subjects' schedule. A reliable relationship was observed between the time recorded by the subject directly on the booklet and the time recorded by electronic collection device (n=286 observations; r(2)=0.98). However, subjects did not consistently collect the saliva samples at the two specific times requested, 30 and 600 min after awakening. Both cortisol and DHEA revealed diurnal declines. In spite of variance in collection times at 30 min and 600 min after awakening, the slope of the diurnal decline in both salivary cortisol and DHEA was similar when we compared collection tolerances of ±7.5 and ±15 min for each steroid. These unique collection booklets proved to be a reliable method for recording collection times by subjects as well as for estimating diurnal salivary cortisol and DHEA patterns. Copyright © 2013 Elsevier Ltd. All rights reserved.

  19. Engineering the mechanical properties of ultrabarrier films grown by atomic layer deposition for the encapsulation of printed electronics

    International Nuclear Information System (INIS)

    Bulusu, A.; Singh, A.; Kim, H.; Wang, C. Y.; Dindar, A.; Fuentes-Hernandez, C.; Kippelen, B.; Cullen, D.; Graham, S.

    2015-01-01

    Direct deposition of barrier films by atomic layer deposition (ALD) onto printed electronics presents a promising method for packaging devices. Films made by ALD have been shown to possess desired ultrabarrier properties, but face challenges when directly grown onto surfaces with varying composition and topography. Challenges include differing nucleation and growth rates across the surface, stress concentrations from topography and coefficient of thermal expansion mismatch, elastic constant mismatch, and particle contamination that may impact the performance of the ALD barrier. In such cases, a polymer smoothing layer may be needed to coat the surface prior to ALD barrier film deposition. We present the impact of architecture on the performance of aluminum oxide (Al 2 O 3 )/hafnium oxide (HfO 2 ) ALD nanolaminate barrier films deposited on fluorinated polymer layer using an optical calcium (Ca) test under damp heat. It is found that with increasing polymer thickness, the barrier films with residual tensile stress are prone to cracking resulting in rapid failure of the Ca sensor at 50 °C/85% relative humidity. Inserting a SiN x layer with residual compressive stress between the polymer and ALD layers is found to prevent cracking over a range of polymer thicknesses with more than 95% of the Ca sensor remaining after 500 h of testing. These results suggest that controlling mechanical properties and film architecture play an important role in the performance of direct deposited ALD barriers

  20. Engineering the mechanical properties of ultrabarrier films grown by atomic layer deposition for the encapsulation of printed electronics

    Energy Technology Data Exchange (ETDEWEB)

    Bulusu, A.; Singh, A.; Kim, H. [Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Wang, C. Y.; Dindar, A.; Fuentes-Hernandez, C.; Kippelen, B. [School of Electrical and Computer Engineering, Georgia Institute of Technology, and Center for Organic Photonics and Electronics, Atlanta, Georgia 30332 (United States); Cullen, D. [Oak Ridge National Laboratory, P.O. Box 2008 MS-6064, Oak Ridge, Tennessee 37831 (United States); Graham, S., E-mail: sgraham@gatech.edu [Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Oak Ridge National Laboratory, P.O. Box 2008 MS-6064, Oak Ridge, Tennessee 37831 (United States)

    2015-08-28

    Direct deposition of barrier films by atomic layer deposition (ALD) onto printed electronics presents a promising method for packaging devices. Films made by ALD have been shown to possess desired ultrabarrier properties, but face challenges when directly grown onto surfaces with varying composition and topography. Challenges include differing nucleation and growth rates across the surface, stress concentrations from topography and coefficient of thermal expansion mismatch, elastic constant mismatch, and particle contamination that may impact the performance of the ALD barrier. In such cases, a polymer smoothing layer may be needed to coat the surface prior to ALD barrier film deposition. We present the impact of architecture on the performance of aluminum oxide (Al{sub 2}O{sub 3})/hafnium oxide (HfO{sub 2}) ALD nanolaminate barrier films deposited on fluorinated polymer layer using an optical calcium (Ca) test under damp heat. It is found that with increasing polymer thickness, the barrier films with residual tensile stress are prone to cracking resulting in rapid failure of the Ca sensor at 50 °C/85% relative humidity. Inserting a SiN{sub x} layer with residual compressive stress between the polymer and ALD layers is found to prevent cracking over a range of polymer thicknesses with more than 95% of the Ca sensor remaining after 500 h of testing. These results suggest that controlling mechanical properties and film architecture play an important role in the performance of direct deposited ALD barriers.

  1. Current status of AlInN layers lattice-matched to GaN for photonics and electronics

    International Nuclear Information System (INIS)

    Butte, R; Carlin, J-F; Feltin, E; Gonschorek, M; Nicolay, S; Christmann, G; Simeonov, D; Castiglia, A; Dorsaz, J; Buehlmann, H J; Christopoulos, S; Hoegersthal, G Baldassarri Hoeger von; Grundy, A J D; Mosca, M; Pinquier, C; Py, M A; Demangeot, F; Frandon, J; Lagoudakis, P G; Baumberg, J J; Grandjean, N

    2007-01-01

    We report on the current properties of Al 1-x In x N (x ∼ 0.18) layers lattice-matched (LM) to GaN and their specific use to realize nearly strain-free structures for photonic and electronic applications. Following a literature survey of the general properties of AlInN layers, structural and optical properties of thin state-of-the-art AlInN layers LM to GaN are described showing that despite improved structural properties these layers are still characterized by a typical background donor concentration of (1-5) x 10 18 cm -3 and a large Stokes shift (∼800 meV) between luminescence and absorption edge. The use of these AlInN layers LM to GaN is then exemplified through the properties of GaN/AlInN multiple quantum wells (QWs) suitable for near-infrared intersubband applications. A built-in electric field of 3.64 MV cm -1 solely due to spontaneous polarization is deduced from photoluminescence measurements carried out on strain-free single QW heterostructures, a value in good agreement with that deduced from theoretical calculation. Other potentialities regarding optoelectronics are demonstrated through the successful realization of crack-free highly reflective AlInN/GaN distributed Bragg reflectors (R > 99%) and high quality factor microcavities (Q > 2800) likely to be of high interest for short wavelength vertical light emitting devices and fundamental studies on the strong coupling regime between excitons and cavity photons. In this respect, room temperature (RT) lasing of a LM AlInN/GaN vertical cavity surface emitting laser under optical pumping is reported. A description of the selective lateral oxidation of AlInN layers for current confinement in nitride-based light emitting devices and the selective chemical etching of oxidized AlInN layers is also given. Finally, the characterization of LM AlInN/GaN heterojunctions will reveal the potential of such a system for the fabrication of high electron mobility transistors through the report of a high two

  2. The thin layer technique and its application to electron microscopy; La technique des couches minces et son application a la microscopie electronique

    Energy Technology Data Exchange (ETDEWEB)

    Ranc, G. [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1957-10-15

    This work deals with the technique of thin layers obtained by evaporation under vacuum, in the thickness range extending from a few monoatomic layers to several hundred angstroms. The great theoretical and practical interest of these layers has, it is well known, given rise to many investigations from Faraday onwards. Within the necessarily restricted limits of this study, we shall approach the problem more particularly from the point of view of: - their production; - their use in electron microscopy. A critical appraisal is made, in the light of present-day knowledge, based on our personal experience and on an extensive bibliography which we have collected on the subject. (author) [French] Le present travail concerne la technique des couches minces obtenues par evaporation sous vide, dans le domaine d'epaisseur qui s'etend de quelques couches monoatomiques a plusieurs centaines d'angstroms. L'interet theorique et pratique considerable de ces couches a suscite, comme on sait, de nombreux travaux depuis Faraday. Dans le cadre necessairement restreint de cette these, nous aborderons plus particulierement le point de vue de: - leur obtention; - leur utilisation en microscopie electronique. Il s'agit d'une mise au point critique, a la lumiere des connaissances actuelles, appuyee sur notre experience personnelle et sur une importante bibliographie, qu'il nous a ete donne de reunir a ce sujet. (auteur)

  3. The thin layer technique and its application to electron microscopy; La technique des couches minces et son application a la microscopie electronique

    Energy Technology Data Exchange (ETDEWEB)

    Ranc, G [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1957-10-15

    This work deals with the technique of thin layers obtained by evaporation under vacuum, in the thickness range extending from a few monoatomic layers to several hundred angstroms. The great theoretical and practical interest of these layers has, it is well known, given rise to many investigations from Faraday onwards. Within the necessarily restricted limits of this study, we shall approach the problem more particularly from the point of view of: - their production; - their use in electron microscopy. A critical appraisal is made, in the light of present-day knowledge, based on our personal experience and on an extensive bibliography which we have collected on the subject. (author) [French] Le present travail concerne la technique des couches minces obtenues par evaporation sous vide, dans le domaine d'epaisseur qui s'etend de quelques couches monoatomiques a plusieurs centaines d'angstroms. L'interet theorique et pratique considerable de ces couches a suscite, comme on sait, de nombreux travaux depuis Faraday. Dans le cadre necessairement restreint de cette these, nous aborderons plus particulierement le point de vue de: - leur obtention; - leur utilisation en microscopie electronique. Il s'agit d'une mise au point critique, a la lumiere des connaissances actuelles, appuyee sur notre experience personnelle et sur une importante bibliographie, qu'il nous a ete donne de reunir a ce sujet. (auteur)

  4. Thin-film encapsulation of organic electronic devices based on vacuum evaporated lithium fluoride as protective buffer layer

    Science.gov (United States)

    Peng, Yingquan; Ding, Sihan; Wen, Zhanwei; Xu, Sunan; Lv, Wenli; Xu, Ziqiang; Yang, Yuhuan; Wang, Ying; Wei, Yi; Tang, Ying

    2017-03-01

    Encapsulation is indispensable for organic thin-film electronic devices to ensure reliable operation and long-term stability. For thin-film encapsulating organic electronic devices, insulating polymers and inorganic metal oxides thin films are widely used. However, spin-coating of insulating polymers directly on organic electronic devices may destroy or introduce unwanted impurities in the underlying organic active layers. And also, sputtering of inorganic metal oxides may damage the underlying organic semiconductors. Here, we demonstrated that by utilizing vacuum evaporated lithium fluoride (LiF) as protective buffer layer, spin-coated insulating polymer polyvinyl alcohol (PVA), and sputtered inorganic material Er2O3, can be successfully applied for thin film encapsulation of copper phthalocyanine (CuPc)-based organic diodes. By encapsulating with LiF/PVA/LiF trilayer and LiF/Er2O3 bilayer films, the device lifetime improvements of 10 and 15 times can be achieved. These methods should be applicable for thin-film encapsulation of all kinds of organic electronic devices. Moisture-induced hole trapping, and Al top electrode oxidation are suggest to be the origins of current decay for the LiF/PVA/LiF trilayer and LiF/Er2O3 bilayer films encapsulated devices, respectively.

  5. The behavior of plasma with an arbitrary degree of degeneracy of electron gas in the conductive layer

    Science.gov (United States)

    Latyshev, A. V.; Gordeeva, N. M.

    2017-09-01

    We obtain an analytic solution of the boundary problem for the behavior (fluctuations) of an electron plasma with an arbitrary degree of degeneracy of the electron gas in the conductive layer in an external electric field. We use the kinetic Vlasov-Boltzmann equation with the Bhatnagar-Gross-Krook collision integral and the Maxwell equation for the electric field. We use the mirror boundary conditions for the reflections of electrons from the layer boundary. The boundary problem reduces to a one-dimensional problem with a single velocity. For this, we use the method of consecutive approximations, linearization of the equations with respect to the absolute distribution of the Fermi-Dirac electrons, and the conservation law for the number of particles. Separation of variables then helps reduce the problem equations to a characteristic system of equations. In the space of generalized functions, we find the eigensolutions of the initial system, which correspond to the continuous spectrum (Van Kampen mode). Solving the dispersion equation, we then find the eigensolutions corresponding to the adjoint and discrete spectra (Drude and Debye modes). We then construct the general solution of the boundary problem by decomposing it into the eigensolutions. The coefficients of the decomposition are given by the boundary conditions. This allows obtaining the decompositions of the distribution function and the electric field in explicit form.

  6. Increased luminance of MEH-PPV and PFO based PLEDs by using salmon DNA as an electron blocking layer

    International Nuclear Information System (INIS)

    Madhwal, Devinder; Rait, S.S.; Verma, A.; Kumar, Amit; Bhatnagar, P.K.; Mathur, P.C.; Onoda, M.

    2010-01-01

    The effect of salmon DNA-CTMA as an electron blocking layer (EBL) has been examined on the performance of MEH-PPV and PFO-based light emitting diodes. Though the turn-on voltage increases with incorporation of EBL, a significant increase in luminance and luminous efficiency for both the devices is observed. The EBL improves the device performance by blocking electrons at the EBL-polymer interface, thereby increasing the recombination probability of electrons and holes. The luminance of the MEH-PPV based Bio-LED increases to 100 cd/m 2 from 30 cd/m 2 while a corresponding increase for the PFO based LED is to 160 cd/m 2 from 80 cd/m 2 with and without EBL, respectively.

  7. Low-Cost and Green Fabrication of Polymer Electronic Devices by Push-Coating of the Polymer Active Layers.

    Science.gov (United States)

    Vohra, Varun; Mróz, Wojciech; Inaba, Shusei; Porzio, William; Giovanella, Umberto; Galeotti, Francesco

    2017-08-02

    Because of both its easy processability and compatibility with roll-to-roll processes, polymer electronics is considered to be the most promising technology for the future generation of low-cost electronic devices such as light-emitting diodes and solar cells. However, the state-of-the-art deposition technique for polymer electronics (spin-coating) generates a high volume of chlorinated solution wastes during the active layer fabrication. Here, we demonstrate that devices with similar or higher performances can be manufactured using the push-coating technique in which a poly(dimethylsiloxane) (PDMS) layer is simply laid over a very small amount of solution (less than 1μL/covered cm 2 ), which is then left for drying. Using mm thick PDMS provides a means to control the solvent diffusion kinetics (sorption/retention) and removes the necessity for additional applied pressure to generate the desired active layer thickness. Unlike spin-coating, push-coating is a slow drying process that induces a higher degree of crystallinity in the polymer thin film without the necessity for a post-annealing step. The polymer light-emitting diodes and solar cells prepared by push-coating exhibit slightly higher performances with respect to the reference spin-coated devices, whereas at the same time reduce the amounts of active layer materials and chlorinated solvents by 50 and 20 times, respectively. These increased performances can be correlated to the higher polymer crystallinities obtained without applying a post-annealing treatment. As push-coating is a roll-to-roll compatible method, the results presented here open the path to low-cost and eco-friendly fabrication of a wide range of emerging devices based on conjugated polymer materials.

  8. Layered composites of PEDOT/PSS/nanoparticles and PEDOT/PSS/phthalocyanines as electron mediators for sensors and biosensors

    Directory of Open Access Journals (Sweden)

    Celia García-Hernández

    2016-12-01

    Full Text Available The sensing properties of electrodes chemically modified with PEDOT/PSS towards catechol and hydroquinone sensing have been successfully improved by combining layers of PEDOT/PSS with layers of a secondary electrocatalytic material such as gold nanoparticles (PEDOT/PSS/AuNPs, copper phthalocyanine (PEDOT/PSS/CuPc or lutetium bisphthalocyanine (PEDOT/PSS/LuPc2. Layered composites exhibit synergistic effects that strongly enhance the electrocatalytic activity as indicated by the increase in intensity and the shift of the redox peaks to lower potentials. A remarkable improvement has been achieved using PEDOT/PSS/LuPc2, which exhibits excellent electrocatalytic activity towards the oxidation of catechol. The kinetic studies demonstrated diffusion-controlled processes at the electrode surfaces. The kinetic parameters such as Tafel slopes and charge transfer coefficient (α confirm the improved electrocatalytic activity of the layered electron mediators. The peak currents increased linearly with concentration of catechol and hydroquinone over the range of 1.5 × 10−4 to 4.0 × 10−6 mol·L−1 with a limit of detection on the scale of μmol·L−1. The layered composite hybrid systems were also found to be excellent electron mediators in biosensors containing tyrosinase and laccase, and they combine the recognition and biocatalytic properties of biomolecules with the unique catalytic features of composite materials. The observed increase in the intensity of the responses allowed detection limits of 1 × 10−7 mol·L−1 to be attained.

  9. Electronic and magnetic structures of GdS layers investigated by first principle and series expansions calculations

    Energy Technology Data Exchange (ETDEWEB)

    Masrour, R., E-mail: rachidmasrour@hotmail.com [Laboratory of Materials, Processes, Environment and Quality, Cady Ayyed University, National School of Applied Sciences, 63 46000 Safi (Morocco); LMPHE (URAC 12), Faculty of Science, Mohammed V-Agdal University, Rabat (Morocco); Hlil, E.K. [Institut Néel, CNRS et Université Joseph Fourier, BP 166, F-38042 Grenoble cedex 9 (France); Hamedoun, M. [Institute of Nanomaterials and Nanotechnologies, MAScIR, Rabat (Morocco); Benyoussef, A. [LMPHE (URAC 12), Faculty of Science, Mohammed V-Agdal University, Rabat (Morocco); Institute of Nanomaterials and Nanotechnologies, MAScIR, Rabat (Morocco); Hassan II Academy of Science and Technology, Rabat (Morocco)

    2014-04-01

    Self-consistent ab initio calculations, based on Density Functional Theory (DFT) approach and using Full Potential Linear Augmented Plane Wave (FLAPW) method within GGA+U approximation, are performed to investigate both electronic and magnetic properties of the GdS layers. Polarized spin and spin–orbit coupling are included in calculations within the framework of the antiferromagnetic state between two adjacent Gd layers. Magnetic moment considered to lie along (001) axes are computed. Obtained data from ab initio calculations are used as input for the High Temperature Series Expansions (HTSEs) calculations to compute other magnetic parameters. Using the Heisenberg model, the exchange interactions between the magnetic atoms Gd–Gd in the same layer and between the magnetic atoms in the adjacent bilayers are estimated. This estimate is obtained using the antiferromagnetic and ferromagnetic energies computed by abinitio calculations for GdS layers. The High Temperature Series Expansions (HTSEs) of the magnetic susceptibility of GdS with antiferromagnetic moment (m{sub Gd}) is given up to sixth order series versus of (J{sub 11}(Gd–Gd)/k{sub B}T). The Néel temperature T{sub N} is obtained by mean field theory and by HTSEs of the magnetic susceptibility series using the Padé approximant method. The critical exponent γ associated with the magnetic susceptibility is calculated for GdS layers. - Highlights: • Electronic and magnetic properties of GdS are investigated using the ab initio calculations. • Obtained data from abinitio calculations are used as input for HTSEs to compute other magnetic parameters. • Néel temperature and critical exponent are deduced using HTSE method.

  10. Electronic and magnetic structures of GdS layers investigated by first principle and series expansions calculations

    International Nuclear Information System (INIS)

    Masrour, R.; Hlil, E.K.; Hamedoun, M.; Benyoussef, A.

    2014-01-01

    Self-consistent ab initio calculations, based on Density Functional Theory (DFT) approach and using Full Potential Linear Augmented Plane Wave (FLAPW) method within GGA+U approximation, are performed to investigate both electronic and magnetic properties of the GdS layers. Polarized spin and spin–orbit coupling are included in calculations within the framework of the antiferromagnetic state between two adjacent Gd layers. Magnetic moment considered to lie along (001) axes are computed. Obtained data from ab initio calculations are used as input for the High Temperature Series Expansions (HTSEs) calculations to compute other magnetic parameters. Using the Heisenberg model, the exchange interactions between the magnetic atoms Gd–Gd in the same layer and between the magnetic atoms in the adjacent bilayers are estimated. This estimate is obtained using the antiferromagnetic and ferromagnetic energies computed by abinitio calculations for GdS layers. The High Temperature Series Expansions (HTSEs) of the magnetic susceptibility of GdS with antiferromagnetic moment (m Gd ) is given up to sixth order series versus of (J 11 (Gd–Gd)/k B T). The Néel temperature T N is obtained by mean field theory and by HTSEs of the magnetic susceptibility series using the Padé approximant method. The critical exponent γ associated with the magnetic susceptibility is calculated for GdS layers. - Highlights: • Electronic and magnetic properties of GdS are investigated using the ab initio calculations. • Obtained data from abinitio calculations are used as input for HTSEs to compute other magnetic parameters. • Néel temperature and critical exponent are deduced using HTSE method

  11. Performance Analysis of GaN Capping Layer Thickness on GaN/AlGaN/GaN High Electron Mobility Transistors.

    Science.gov (United States)

    Sharma, N; Periasamy, C; Chaturvedi, N

    2018-07-01

    In this paper, we present an investigation of the impact of GaN capping layer and AlGaN layer thickness on the two-dimensional (2D)-electron mobility and the carrier concentration which was formed close to the AlGaN/GaN buffer layer for Al0.25Ga0.75N/GaN and GaN/Al0.25Ga0.75N/GaN heterostructures deposited on sapphire substrates. The results of our analysis clearly indicate that expanding the GaN capping layer thickness from 1 nm to 100 nm prompts an increment in the electron concentration at hetero interface. As consequence of which drain current was additionally increments with GaN cap layer thicknesses, and eventually saturates at approximately 1.85 A/mm for capping layer thickness greater than 40 nm. Interestingly, for the same structure, the 2D-electron mobility, decrease monotonically with GaN capping layer thickness, and saturate at approximately 830 cm2/Vs for capping layer thickness greater than 50 nm. A device with a GaN cap layer didn't exhibit gate leakage current. Furthermore, it was observed that the carrier concentration was first decrease 1.03 × 1019/cm3 to 6.65 × 1018/cm3 with AlGaN Layer thickness from 5 to 10 nm and after that it increases with the AlGaN layer thickness from 10 to 30 nm. The same trend was followed for electric field distributions. Electron mobility decreases monotonically with AlGaN layer thickness. Highest electron mobility 1354 cm2/Vs were recorded for the AlGaN layer thickness of 5 nm. Results obtained are in good agreement with published experimental data.

  12. Electrochemical studies of biocatalytic anode of sulfonated graphene/ferritin/glucose oxidase layer-by-layer biocomposite films for mediated electron transfer.

    Science.gov (United States)

    Inamuddin; Haque, Sufia Ul; Naushad, Mu

    2016-06-01

    In this study, a bioanode was developed by using layer-by-layer (LBL) assembly of sulfonated graphene (SG)/ferritin (Frt)/glucose oxidase (GOx). The SG/Frt biocomposite was used as an electron transfer elevator and mediator, respectively. Glucose oxidase (GOx) from Aspergillus niger was applied as a glucose oxidation biocatalyst. The electrocatalytic oxidation of glucose using GOx modified electrode increases with an increase in the concentration of glucose in the range of 10-50mM. The electrochemical measurements of the electrode was carried out by using cyclic voltammetry (CV) at different scan rates (20-100mVs(-1)) in 30mM of glucose solution prepared in 0.3M potassium ferrocyanide (K4Fe(CN)6) and linear sweep voltammetry (LSV). A saturation current density of 50±2mAcm(-2) at a scan rate of 100mVs(-1) for the oxidation of 30Mm glucose is achieved. Copyright © 2016 Elsevier Inc. All rights reserved.

  13. Plasma-assisted atomic layer deposition of Al(2)O(3) and parylene C bi-layer encapsulation for chronic implantable electronics.

    Science.gov (United States)

    Xie, Xianzong; Rieth, Loren; Merugu, Srinivas; Tathireddy, Prashant; Solzbacher, Florian

    2012-08-27

    Encapsulation of biomedical implants with complex three dimensional geometries is one of the greatest challenges achieving long-term functionality and stability. This report presents an encapsulation scheme that combines Al(2)O(3) by atomic layer deposition with parylene C for implantable electronic systems. The Al(2)O(3)-parylene C bi-layer was used to encapsulate interdigitated electrodes, which were tested invitro by soak testing in phosphate buffered saline solution at body temperature (37 °C) and elevated temperatures (57 °C and 67 °C) for accelerated lifetime testing up to 5 months. Leakage current and electrochemical impedance spectroscopy were measured for evaluating the integrity and insulation performance of the coating. Leakage current was stably about 15 pA at 5 V dc, and impedance was constantly about 3.5 MΩ at 1 kHz by using electrochemical impedance spectroscopy for samples under 67 °C about 5 months (approximately equivalent to 40 months at 37 °C). Alumina and parylene coating lasted at least 3 times longer than parylene coated samples tested at 80 °C. The excellent insulation performance of the encapsulation shows its potential usefulness for chronic implants.

  14. A bio-enabled maximally mild layer-by-layer Kapton surface modification approach for the fabrication of all-inkjet-printed flexible electronic devices

    Science.gov (United States)

    Fang, Yunnan; Hester, Jimmy G. D.; Su, Wenjing; Chow, Justin H.; Sitaraman, Suresh K.; Tentzeris, Manos M.

    2016-12-01

    A bio-enabled, environmentally-friendly, and maximally mild layer-by-layer approach has been developed to surface modify inherently hydrophobic Kapton HN substrates to allow for great printability of both water- and organic solvent-based inks thus facilitating the full-inkjet-printing of flexible electronic devices. Different from the traditional Kapton surface modification approaches which are structure-compromising and use harsh conditions to target, and oxidize and/or remove part of, the surface polyimide of Kapton, the present Kapton surface modification approach targeted the surface electric charges borne by its additive particles, and was not only the first to utilize environmentally-friendly clinical biomolecules to build up a thin film of protamine-heparin complex on Kapton, but also the first to be conducted under minimally destructive and maximally mild conditions. Besides, for electrically charged ink particles, the present surface modification method can enhance the uniformity of the inkjet-printed films by reducing the “coffee ring effect”. As a proof-of-concept demonstration, reduced graphene oxide-based gas sensors, which were flexible, ultra-lightweight, and miniature-sized, were fully-inkjet-printed on surface modified Kapton HN films and tested for their sensitivity to dimethyl methylphosphonate (a nerve agent simulant). Such fabricated sensors survived a Scotch-tape peel test and were found insensitive to repeated bending to a small 0.5 cm radius.

  15. Analysis of the Electrical Properties of an Electron Injection Layer in Alq3-Based Organic Light Emitting Diodes.

    Science.gov (United States)

    Kim, Soonkon; Choi, Pyungho; Kim, Sangsub; Park, Hyoungsun; Baek, Dohyun; Kim, Sangsoo; Choi, Byoungdeog

    2016-05-01

    We investigated the carrier transfer and luminescence characteristics of organic light emitting diodes (OLEDs) with structure ITO/HAT-CN/NPB/Alq3/Al, ITO/HAT-CN/NPB/Alq3/Liq/Al, and ITO/HAT-CN/NPB/Alq3/LiF/A. The performance of the OLED device is improved by inserting an electron injection layer (EIL), which induces lowering of the electron injection barrier. We also investigated the electrical transport behaviors of p-Si/Alq3/Al, p-Si/Alq3/Liq/Al, and p-Si/Alq3/LiF/Al Schottky diodes, by using current-voltage (L-V) and capacitance-voltage (C-V) characterization methods. The parameters of diode quality factor n and barrier height φ(b) were dependent on the interlayer materials between Alq3 and Al. The barrier heights φ(b) were 0.59, 0.49, and 0.45 eV, respectively, and the diode quality factors n were 1.34, 1.31, and 1.30, respectively, obtained from the I-V characteristics. The built in potentials V(bi) were 0.41, 0.42, and 0.42 eV, respectively, obtained from the C-V characteristics. In this experiment, Liq and LiF thin film layers improved the carrier transport behaviors by increasing electron injection from Al to Alq3, and the LiF schottky diode showed better I-V performance than the Liq schottky diode. We confirmed that a Liq or LiF thin film inter-layer governs electron and hole transport at the Al/Alq3 interface, and has an important role in determining the electrical properties of OLED devices.

  16. Sausage instabilities in the electron current layer and its role in the concept of fast ignition

    International Nuclear Information System (INIS)

    Das, Amita; Jain, Neeraj; Kaw, Predhiman; Sengupta, Sudip

    2004-01-01

    The fast ignition concept of laser fusion utilizes hot electrons produced at the surface of the target by an incident intense laser pulse for the creation of the hot spot for ignition. As the hot electrons move inwards to the core of the precompressed target, the electrons from the background plasma provide a return shielding current. Three dimensional PIC simulations have shown that intense Weibel, tearing and coalescence instabilities take place which organize the current distribution into a few current filaments. In each of these filaments the central core region constitutes a current due to the fast electrons propagating inwards towards the pellet core, while the outer cylindrical shell region carries the return shielding current. The presence of instabilities and their subsequent nonlinear development can hinder the propagation of fast electrons towards the core influencing the location of the hot spot for ignition. Earlier studies showing the existence of sausage-like modes were carried out in the nonrelativistic limit and under the assumption of equal electron densities of the fast and the cold electrons. The fast electron density, in general, differs considerably from the background plasma density as it is dependent on the incident laser intensity. This paper incorporates relativistic effects and also studies the dependence of the growth rate on the fast electron density. Finally, nonlinear saturation of the instability and its impact on the stopping of the fast electron motion towards the core have also been investigated using numerical simulations. The simulations have, however, currently been carried out for non-relativistic dynamics. The results show that the sheared velocity profile of the channel gets flattened, causing an effective drop in the inward moving current. (author)

  17. Investigation of Electronic and Opto-Electronic Properties of Two-Dimensional (2D) Layers of Copper Indium Selenide Field Effect Transistors

    Science.gov (United States)

    Patil, Prasanna Dnyaneshwar

    Investigations performed in order to understand the electronic and optoelectronic properties of field effect transistors based on few layers of 2D Copper Indium Selenide (CuIn7Se11) are reported. In general, field effect transistors (FETs), electric double layer field effect transistors (EDL-FETs), and photodetectors are crucial part of several electronics based applications such as tele-communication, bio-sensing, and opto-electronic industry. After the discovery of graphene, several 2D semiconductor materials like TMDs (MoS2, WS2, and MoSe2 etc.), group III-VI materials (InSe, GaSe, and SnS2 etc.) are being studied rigorously in order to develop them as components in next generation FETs. Traditionally, thin films of ternary system of Copper Indium Selenide have been extensively studied and used in optoelectronics industry as photoactive component in solar cells. Thus, it is expected that atomically thin 2D layered structure of Copper Indium Selenide can have optical properties that could potentially be more advantageous than its thin film counterpart and could find use for developing next generation nano devices with utility in opto/nano electronics. Field effect transistors were fabricated using few-layers of CuIn7Se11 flakes, which were mechanically exfoliated from bulk crystals grown using chemical vapor transport technique. Our FET transport characterization measurements indicate n-type behavior with electron field effect mobility microFE ≈ 36 cm2 V-1 s-1 at room temperature when Silicon dioxide (SiO2) is used as a back gate. We found that in such back gated field effect transistor an on/off ratio of 104 and a subthreshold swing ≈ 1 V/dec can be obtained. Our investigations further indicate that Electronic performance of these materials can be increased significantly when gated from top using an ionic liquid electrolyte [1-Butyl-3-methylimidazolium hexafluorophosphate (BMIM-PF6)]. We found that electron field effect mobility microFE can be increased from

  18. Comparison of the layer structure of vapor phase and leached SRL glass by use of AEM [analytical electron microscopy

    International Nuclear Information System (INIS)

    Biwer, B.M.; Bates, J.K.; Abrajano, T.A. Jr.; Bradley, J.P.

    1989-01-01

    Test samples of 131 type glass that have been reacted for extended time periods in water vapor atmospheres of different relative humidities and in static leaching solution have been examined to characterize the reaction products. Analytical electron microscopy (AEM) was used to characterize the leached samples, and a complicated layer structure was revealed, consisting of phases that precipitate from solution and also form within the residual glass layer. The precipitated phases include birnes-site, saponite, and an iron species, while the intralayer phases include the U-Ti containing phase brannerite distributed within a matrix consisting of bands of an Fe rich montmorillonite clay. Comparison is made between samples leached at 40 degrees C for 4 years with those leached at 90 degrees C for 3-1/2 years. The samples reacted in water vapor were examined with scanning electron microscopy and show increasing reaction as both the relative humidity and time of reaction increases. These samples also contain a layered structure with reaction products on the glass surface. 15 refs., 5 figs

  19. Addressing the efficiency roll-off in a fluorescent OLED by facile electron transport layer doping and carrier confinement

    Science.gov (United States)

    Soman, Anjaly; M, Manuraj; Unni, K. N. Narayanan

    2018-05-01

    Organic light emitting diodes (OLEDs) often face the issue of decreasing power efficiency with increasing brightness. Loss of charge carrier balance is one of the factors contributing to the efficiency roll-off. We demonstrate that by using a combination of doped electron transport layer (ETL) and a specially chosen electron blocking layer (EBL) having high hole mobility, this efficiency roll-off can be effectively suppressed. A tris-(8-hydroxyquinoline) aluminium (Alq3) based OLED has been fabricated with 2,3,6,7-Tetrahydro-1,1,7,7,-tetramethyl-1H, 5H,11H-10-(2-benzothiazolyl) quinolizino-[9,9a, 1n gh]coumarin (C545T) as the emissive dopant. Bulk doping of the ETL with lithium fluoride (LiF) was optimized to increase the luminous intensity as well as the current efficiency. An EBL with high hole mobility introduced between the EML and the hole transport layer (HTL) improved the performance drastically, and the device brightness at 9 V got improved by a factor of 2.5 compared to that of the control device. While increasing the brightness from 100 cd/m2 to 1000 cd/m2, the power efficiency drop was 47% for the control device whereas only a drop of 15% was observed for the modified device. The possible mechanisms for the enhanced performance are discussed.

  20. Power electronic solutions for interfacing offshore wind turbine generators to medium voltage DC collection grids

    Science.gov (United States)

    Daniel, Michael T.

    Here in the early 21st century humanity is continuing to seek improved quality of life for citizens throughout the world. This global advancement is providing more people than ever with access to state-of-the-art services in areas such as transportation, entertainment, computing, communication, and so on. Providing these services to an ever-growing population while considering the constraints levied by continuing climate change will require new frontiers of clean energy to be developed. At the time of this writing, offshore wind has been proven as both a politically and economically agreeable source of clean, sustainable energy by northern European nations with many wind farms deployed in the North, Baltic, and Irish Seas. Modern offshore wind farms are equipped with an electrical system within the farm itself to aggregate the energy from all turbines in the farm before it is transmitted to shore. This collection grid is traditionally a 3-phase medium voltage alternating current (MVAC) system. Due to reactive power and other practical constraints, it is preferable to use a medium voltage direct current (MVDC) collection grid when siting farms >150 km from shore. To date, no offshore wind farm features an MVDC collection grid. However, MVDC collection grids are expected to be deployed with future offshore wind farms as they are sited further out to sea. In this work it is assumed that many future offshore wind farms may utilize an MVDC collection grid to aggregate electrical energy generated by individual wind turbines. As such, this work presents both per-phase and per-pole power electronic converter systems suitable for interfacing individual wind turbines to such an MVDC collection grid. Both interfaces are shown to provide high input power factor at the wind turbine while providing DC output current to the MVDC grid. Common mode voltage stress and circulating currents are investigated, and mitigation strategies are provided for both interfaces. A power sharing

  1. Enhanced brightness of organic light-emitting diodes based on Mg:Ag cathode using alkali metal chlorides as an electron injection layer

    International Nuclear Information System (INIS)

    Zou Ye; Deng Zhenbo; Xu Denghui; Lü Zhaoyue; Yin Yuehong; Du Hailiang; Chen Zheng; Wang Yongsheng

    2012-01-01

    Different thicknesses of cesium chloride (CsCl) and various alkali metal chlorides were inserted into organic light-emitting diodes (OLEDs) as electron injection layers (EILs). The basic structure of OLED is indium tin oxide (ITO)/N,N′-diphenyl-N,N′-bis(1-napthyl-phenyl)-1.1′-biphenyl-4.4′-diamine (NPB)/tris-(8-hydroxyquinoline) aluminum (Alq 3 )/Mg:Ag/Ag. The electroluminescent (EL) performance curves show that both the brightness and efficiency of the OLEDs can be obviously enhanced by using a thin alkali metal chloride layer as an EIL. The electron injection barrier height between the Alq 3 layer and Mg:Ag cathode is reduced by inserting a thin alkali metal chloride as an EIL, which results in enhanced electron injection and electron current. Therefore, a better balance of hole and electron currents at the emissive interface is achieved and consequently the brightness and efficiency of OLEDs are improved. - Highlights: ► Alkaline metal chlorides were used as electron injection layers in organic light-emitting diodes based on Mg:Ag cathode. ► Brightness and efficiency of OLEDs with alkaline metal chlorides as electron injection layers were all greatly enhanced. ► The Improved OLED performance was attributed to the possible interfacial chemical reaction. ► Electron-only devices are fabricated to demonstrate the electron injection enhancement.

  2. An experimental program for collective acceleration of ions using intense relativistic electron beams

    International Nuclear Information System (INIS)

    Vijayan, T.; Raychowdhury, P.; Iyengar, S.K.

    1992-01-01

    A program of collective ion acceleration using intense relativistic electron beam (IREB) of 0.25-1MeV, 6-80kA, 60ns on the Kilo Ampere Linear Injector (KALI) systems to accelerate light and heavy ions to high energies approaching GeV with currents over tens of amperes, is envisaged in this report. The accelerator will make use of the intense space-charge field of electron beam in vacuum for accelerating ions which are injected into it. For ion injection, various alternatives, such as, localized gas puff, dielectric insert, laser plasma, etc. have been considered as present and long-term objectives. Among the variety of diagnostic methods chosen for characterizing the accelerated ions include range-energy in foil, CR-39 track detector, nuclear activation technique and time-of-flight for energy and species determination; ion Faraday cup for current measurement; and Thomson parabola analyzer for determining the post-acceleration charge-state. In the proposed MAHAKALI collective accelerator, protons of energy over 10 MeV and higher charge state metal ions around a GeV are predicted using a REB of 1MeV, 30kA, 60ns from KALI-5000. In present experiments using KALI-200 with REB parameters of 250keV, 60kA, 80ns, protons over a MeV and carbon and fluorine ions respectively for 12MeV and 16MeV in significant currents have been accelerated. (author). 35 refs., figs., tabs

  3. Efficacy of Two Irrigants Used with Self-Adjusting File System on Smear Layer: A Scanning Electron Microscopy Study.

    Science.gov (United States)

    Genç Şen, Özgür; Kaya, Sadullah; Er, Özgür; Alaçam, Tayfun

    2014-01-01

    Mechanical instrumentation of root canals produces a smear layer that adversely affects the root canal seal. The aim of this study was to evaluate efficacy of MTAD and citric acid solutions used with self-adjusting file (SAF) system on smear layer. Twenty-three single-rooted human teeth were used for the study. Canals were instrumented manually up to a number 20 K file size. SAF was used to prepare the root canals. The following groups were studied: Group 1: MTAD + 5.25% NaOCl, Group 2: 20% citric acid + 5.25% NaOCl, and Group 3: Control (5.25% NaOCl). All roots were split longitudinally and subjected to scanning electron microscopy. The presence of smear layer in the coronal, middle, and apical thirds was evaluated using a five-score evaluation system. Kruskal-Wallis and Mann-Whitney U tests were used for statistical analysis. In the coronal third, Group 2 exhibited the best results and was statistically different froms the other groups (P 0.05). The solutions used in Group 1 and 2 could effectively remove smear layer in most of the specimens. However, citric acid was more effective than MTAD in the three thirds of the canal.

  4. Structural and electronic properties of single molecules and organic layers on surfaces

    NARCIS (Netherlands)

    Sotthewes, Kai

    2016-01-01

    Single molecules and organic layers on well-defined solid surfaces have attracted tremendous attention owing to their interesting physical and chemical properties. The ultimate utility of single molecules or self-assembled monolayers (SAMs) for potential applications is critically dependent on the

  5. Control of electronic properties of 2D carbides (MXenes) by manipulating their transition metal layers

    KAUST Repository

    Anasori, Babak; Shi, Chenyang; Moon, Eun Ju; Xie, Yu; Voigt, Cooper A.; Kent, Paul R. C.; May, Steven J.; Billinge, Simon J. L.; Barsoum, Michel W.; Gogotsi, Yury

    2016-01-01

    M′′–C layers. Using X-ray atomic pair distribution function (PDF) analysis on Mo2TiC2 and Mo2Ti2C3 MXenes, we present the first quantitative analysis of structures of these novel materials and experimentally confirm that Mo atoms are in the outer

  6. Electromagnetic computer simulations of collective ion acceleration by a relativistic electron beam

    International Nuclear Information System (INIS)

    Galvez, M.; Gisler, G.R.

    1988-01-01

    A 2.5 electromagnetic particle-in-cell computer code is used to study the collective ion acceleration when a relativistic electron beam is injected into a drift tube partially filled with cold neutral plasma. The simulations of this system reveals that the ions are subject to electrostatic acceleration by an electrostatic potential that forms behind the head of the beam. This electrostatic potential develops soon after the beam is injected into the drift tube, drifts with the beam, and eventually settles to a fixed position. At later times, this electrostatic potential becomes a virtual cathode. When the permanent position of the electrostatic potential is at the edge of the plasma or further up, then ions are accelerated forward and a unidirectional ion flow is obtained otherwise a bidirectional ion flow occurs. The ions that achieve higher energy are those which drift with the negative potential. When the plasma density is varied, the simulations show that optimum acceleration occurs when the density ratio between the beam (n b ) and the plasma (n o ) is unity. Simulations were carried out by changing the ion mass. The results of these simulations corroborate the hypothesis that the ion acceleration mechanism is purely electrostatic, so that the ion acceleration depends inversely on the charge particle mass. The simulations also show that the ion maximum energy increased logarithmically with the electron beam energy and proportional with the beam current

  7. Electronic Toll Collection Systems and their Interoperability: The State of Art

    Energy Technology Data Exchange (ETDEWEB)

    Heras Molina, J. de la; Gomez Sanchez, J.; Vassallo Magro, J.M.

    2016-07-01

    The European Electronic Toll Service (EETS) was created in 2004 with the aim of ensuring interoperability among the existing electronic toll collection (ETC) systems in Europe. However, the lack of cooperation between groups of stakeholders has not made possible to achieve this goal ten years later. The purpose of this research is to determine the better way to achieve interoperability among the different ETC systems in Europe. Our study develops a review of the six main ETC systems available worldwide: Automatic Number Plate Recognition (ANPR), Dedicated Short-Range Communications (DSRC), Radio Frequency Identification (RFID), Satellite systems (GNSS), Tachograph, and Mobile communications tolling systems. The research also provides some insight on different emerging technologies. By focusing on different operational and strategic aspects offered by each technology, we identify their main strengths, weaknesses, opportunities and threats and makes different recommendations to improve the current framework. The research concludes that given the diversity of advantages and inconveniences offered by each system, the selection of a certain ETC technology should also take into account its potential to overcome the weaknesses in the current ETC framework. In this line, different policy recommendations are proposed to improve the present ETC strategy at the EU. (Author)

  8. Enhancement of Perovskite Solar Cells Efficiency using N-Doped TiO2 Nanorod Arrays as Electron Transfer Layer.

    Science.gov (United States)

    Zhang, Zhen-Long; Li, Jun-Feng; Wang, Xiao-Li; Qin, Jian-Qiang; Shi, Wen-Jia; Liu, Yue-Feng; Gao, Hui-Ping; Mao, Yan-Li

    2017-12-01

    In this paper, N-doped TiO 2 (N-TiO 2 ) nanorod arrays were synthesized with hydrothermal method, and perovskite solar cells were fabricated using them as electron transfer layer. The solar cell performance was optimized by changing the N doping contents. The power conversion efficiency of solar cells based on N-TiO 2 with the N doping content of 1% (N/Ti, atomic ratio) has been achieved 11.1%, which was 14.7% higher than that of solar cells based on un-doped TiO 2 . To get an insight into the improvement, some investigations were performed. The structure was examined with X-ray powder diffraction (XRD), and morphology was examined by scanning electron microscopy (SEM). Energy dispersive spectrometer (EDS) and Tauc plot spectra indicated the incorporation of N in TiO 2 nanorods. Absorption spectra showed higher absorption of visible light for N-TiO 2 than un-doped TiO 2 . The N doping reduced the energy band gap from 3.03 to 2.74 eV. The photoluminescence (PL) and time-resolved photoluminescence (TRPL) spectra displayed the faster electron transfer from perovskite layer to N-TiO 2 than to un-doped TiO 2 . Electrochemical impedance spectroscopy (EIS) showed the smaller resistance of device based on N-TiO 2 than that on un-doped TiO 2 .

  9. Low resistivity ZnO-GO electron transport layer based CH3NH3PbI3 solar cells

    Directory of Open Access Journals (Sweden)

    Muhammad Imran Ahmed

    2016-06-01

    Full Text Available Perovskite based solar cells have demonstrated impressive performances. Controlled environment synthesis and expensive hole transport material impede their potential commercialization. We report ambient air synthesis of hole transport layer free devices using ZnO-GO as electron selective contacts. Solar cells fabricated with hole transport layer free architecture under ambient air conditions with ZnO as electron selective contact achieved an efficiency of 3.02%. We have demonstrated that by incorporating GO in ZnO matrix, low resistivity electron selective contacts, critical to improve the performance, can be achieved. We could achieve max efficiency of 4.52% with our completed devices for ZnO: GO composite. Impedance spectroscopy confirmed the decrease in series resistance and an increase in recombination resistance with inclusion of GO in ZnO matrix. Effect of temperature on completed devices was investigated by recording impedance spectra at 40 and 60 oC, providing indirect evidence of the performance of solar cells at elevated temperatures.

  10. Controlled Vectorial Electron Transfer and Photoelectrochemical Applications of Layered Relay/Photosensitizer-Imprinted Au Nanoparticle Architectures on Electrodes.

    Science.gov (United States)

    Metzger, Tzuriel S; Tel-Vered, Ran; Willner, Itamar

    2016-03-23

    Two configurations of molecularly imprinted bis-aniline-bridged Au nanoparticles (NPs) for the specific binding of the electron acceptor N,N'-dimethyl-4,4'-bipyridinium (MV(2+) ) and for the photosensitizer Zn(II)-protoporphyrin IX (Zn(II)-PP-IX) are assembled on electrodes, and the photoelectrochemical features of the two configurations are discussed. Configuration I includes the MV(2+) -imprinted Au NPs matrix as a base layer, on which the Zn(II)-PP-IX-imprinted Au NPs layer is deposited, while configuration II consists of a bilayer corresponding to the reversed imprinting order. Irradiation of the two electrodes in the presence of a benzoquinone/benzohydroquinone redox probe yields photocurrents of unique features: (i) Whereas configuration I yields an anodic photocurrent, the photocurrent generated by configuration II is cathodic. (ii) The photocurrents obtained upon irradiation of the imprinted electrodes are substantially higher as compared to the nonimprinted surfaces. The high photocurrents generated by the imprinted Au NPs-modified electrodes are attributed to the effective loading of the imprinted matrices with the MV(2+) and Zn(II)-PP-IX units and to the effective charge separation proceeding in the systems. The directional anodic/cathodic photocurrents are rationalized in terms of vectorial electron transfer processes dictated by the imprinting order and by the redox potentials of the photosensitizer/electron acceptor units associated with the imprinted sites in the two configurations. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Effect of an Interfacial Layer on Electron Tunneling through Atomically Thin Al2O3 Tunnel Barriers.

    Science.gov (United States)

    Wilt, Jamie; Sakidja, Ridwan; Goul, Ryan; Wu, Judy Z

    2017-10-25

    Electron tunneling through high-quality, atomically thin dielectric films can provide a critical enabling technology for future microelectronics, bringing enhanced quantum coherent transport, fast speed, small size, and high energy efficiency. A fundamental challenge is in controlling the interface between the dielectric and device electrodes. An interfacial layer (IL) will contain defects and introduce defects in the dielectric film grown atop, preventing electron tunneling through the formation of shorts. In this work, we present the first systematic investigation of the IL in Al 2 O 3 dielectric films of 1-6 Å's in thickness on an Al electrode. We integrated several advanced approaches: molecular dynamics to simulate IL formation, in situ high vacuum sputtering atomic layer deposition (ALD) to synthesize Al 2 O 3 on Al films, and in situ ultrahigh vacuum scanning tunneling spectroscopy to probe the electron tunneling through the Al 2 O 3 . The IL had a profound effect on electron tunneling. We observed a reduced tunnel barrier height and soft-type dielectric breakdown which indicate that defects are present in both the IL and in the Al 2 O 3 . The IL forms primarily due to exposure of the Al to trace O 2 and/or H 2 O during the pre-ALD heating step of fabrication. As the IL was systematically reduced, by controlling the pre-ALD sample heating, we observed an increase of the ALD Al 2 O 3 barrier height from 0.9 to 1.5 eV along with a transition from soft to hard dielectric breakdown. This work represents a key step toward the realization of high-quality, atomically thin dielectrics with electron tunneling for the next generation of microelectronics.

  12. Heterogeneous electron transfer kinetics and electrocatalytic behaviour of mixed self-assembled ferrocenes and SWCNT layers

    CSIR Research Space (South Africa)

    Nkosi, D

    2010-01-01

    Full Text Available The electron transfer dynamics and electrocatalytic behaviour of ferrocene-terminated self-assembled monolayers (SAMs), co-adsorbed with single-walled carbon nanotubes (SWCNTs) on a gold electrode, have been interrogated for the first time...

  13. Electron microscopy observation of TiO2 nanocrystal evolution in high-temperature atomic layer deposition.

    Science.gov (United States)

    Shi, Jian; Li, Zhaodong; Kvit, Alexander; Krylyuk, Sergiy; Davydov, Albert V; Wang, Xudong

    2013-01-01

    Understanding the evolution of amorphous and crystalline phases during atomic layer deposition (ALD) is essential for creating high quality dielectrics, multifunctional films/coatings, and predictable surface functionalization. Through comprehensive atomistic electron microscopy study of ALD TiO2 nanostructures at designed growth cycles, we revealed the transformation process and sequence of atom arrangement during TiO2 ALD growth. Evolution of TiO2 nanostructures in ALD was found following a path from amorphous layers to amorphous particles to metastable crystallites and ultimately to stable crystalline forms. Such a phase evolution is a manifestation of the Ostwald-Lussac Law, which governs the advent sequence and amount ratio of different phases in high-temperature TiO2 ALD nanostructures. The amorphous-crystalline mixture also enables a unique anisotropic crystal growth behavior at high temperature forming TiO2 nanorods via the principle of vapor-phase oriented attachment.

  14. Chemical composition and electronic structure of the passive layer formed on stainless steels in a glucose-oxidase solution

    Energy Technology Data Exchange (ETDEWEB)

    Marconnet, C. [Laboratoire de Genie des Procedes et des Materiaux, Ecole Centrale Paris, Grande Voie des Vignes, 92290 CHATENAY-MALABRY (France)], E-mail: cyril.marconnet@yahoo.fr; Wouters, Y. [Science et Ingenierie des Materiaux et Procedes, Institut National Polytechnique de Grenoble, F-38402 Saint-Martin d' Heres Cedex (France); Miserque, F. [Laboratoire de Reactivite des Surfaces et des Interfaces, CEA Saclay, Bat. 391, 91191 GIF-SUR-YVETTE (France); Dagbert, C. [Laboratoire de Genie des Procedes et des Materiaux, Ecole Centrale Paris, Grande Voie des Vignes, 92290 CHATENAY-MALABRY (France)], E-mail: catherine.dagbert@ecp.fr; Petit, J.-P. [Laboratoire d' Electrochimie et de Physico-chimie des Materiaux et des Interfaces, INPG, F-38402 Saint-Martin d' Heres Cedex (France); Galerie, A. [Science et Ingenierie des Materiaux et Procedes, Institut National Polytechnique de Grenoble, F-38402 Saint-Martin d' Heres Cedex (France); Feron, D. [Service de Corrosion et du Comportement des Materiaux dans leur Environnement, CEA Saclay, Bat. 458, 91191 GIF-SUR-YVETTE (France)

    2008-12-01

    This article deals with the interaction between the passive layer formed on UNS S30403 and S31254 stainless steels and an enzymatic solution containing glucose oxidase (GOx) and its substrate D-glucose. This enzymatic solution is often used to reproduce in laboratory the ennoblement occuring in non-sterile aerated aqueous environments because of the biofilm settlement on the surface of the metallic material. GOx catalyses the oxidation of D-glucose to gluconic acid by reducing oxygen to hydrogen peroxide and produces an organic acid. Thanks to photocurrent measurements, XPS analysis and Mott-Schottky diagrams, it is here shown that such an environment generates modifications in the chemical composition and electronic structure of the passive layer: it induces a relative enrichment of the n-type semi-conducting phase containing chromium (chromine Cr{sub 2}O{sub 3}) and an increase of the donors density in the space charge region.

  15. Chemical composition and electronic structure of the passive layer formed on stainless steels in a glucose-oxidase solution

    International Nuclear Information System (INIS)

    Marconnet, C.; Wouters, Y.; Miserque, F.; Dagbert, C.; Petit, J.-P.; Galerie, A.; Feron, D.

    2008-01-01

    This article deals with the interaction between the passive layer formed on UNS S30403 and S31254 stainless steels and an enzymatic solution containing glucose oxidase (GOx) and its substrate D-glucose. This enzymatic solution is often used to reproduce in laboratory the ennoblement occuring in non-sterile aerated aqueous environments because of the biofilm settlement on the surface of the metallic material. GOx catalyses the oxidation of D-glucose to gluconic acid by reducing oxygen to hydrogen peroxide and produces an organic acid. Thanks to photocurrent measurements, XPS analysis and Mott-Schottky diagrams, it is here shown that such an environment generates modifications in the chemical composition and electronic structure of the passive layer: it induces a relative enrichment of the n-type semi-conducting phase containing chromium (chromine Cr 2 O 3 ) and an increase of the donors density in the space charge region

  16. Impact of the electron-transport layer on the performance of solution-processed small-molecule organic solar cells.

    Science.gov (United States)

    Long, Guankui; Wan, Xiangjian; Kan, Bin; Hu, Zhicheng; Yang, Xuan; Zhang, Yi; Zhang, Mingtao; Wu, Hongbing; Huang, Fei; Su, Shijian; Cao, Yong; Chen, Yongsheng

    2014-08-01

    Although the performance of polymer solar cells has been improved significantly recently through careful optimization with different interlayers for the same materials, more improvement is needed in this respect for small-molecule-based solar cells, particularly for the electron-transport layers (ETLs). In this work, three different solution-processed ETLs, PFN, ZnO nanoparticles, and LiF, were investigated and compared in the performance of small-molecule-based devices, and power conversion efficiencies (PCEs) of 8.32, 7.30, and 7.38% were achieved, respectively. The mechanism for the ETL-induced enhancement has been studied, and different ETLs have a significantly different impact on the device performance. The clearly improved performance of PFN is attributed to the combination of reduced bimolecular recombination and increased effective photon absorption in the active layer. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Tailoring of structural and electron emission properties of CNT walls and graphene layers using high-energy irradiation

    International Nuclear Information System (INIS)

    Sharma, Himani; Shukla, A K; Vankar, V D; Agarwal, Dinesh C; Avasthi, D K; Sharma, M

    2013-01-01

    Structural and electron emission properties of carbon nanotubes (CNTs) and multilayer graphene (MLG) are tailored using high-energy irradiation by controlling the wall thickness and number of layers. Ion irradiation by 100 MeV Ag + ions at different fluences is used as an effective tool for optimizing defect formation in CNTs and MLGs, as analysed by micro-Raman spectroscopy. It is found that the cross section for defect formation (η) is 3.5 × 10 −11 for thin-walled CNTs, 2.8 × 10 −11 for thick-walled CNTs and 3.1 × 10 −11 for MLGs. High-resolution transmission electron microscopy results also show that thin-walled CNTs and MLGs are more defective in comparison with thick-walled CNTs. Carbon atoms rearrange at a fluence of 1 × 10 12 ions cm −2 in thick-walled CNTs to heal up the damage, which aggravates at higher fluences. The observed electron emission parameters of the modified thin-walled CNTs and MLGs are confirmed with the changes in the structures and are optimized at a fluence of 1 × 10 11 ions cm −2 . However, the electron emission properties of thick-walled CNTs are modified at a fluence of 1 × 10 12 ions cm −2 . The enhancement in the electron emission properties is due to the rearrangement of bonds and hence modified tips due to irradiation. (paper)

  18. Proposed suitable electron reflector layer materials for thin-film CuIn1-xGaxSe2 solar cells

    Science.gov (United States)

    Sharbati, Samaneh; Gharibshahian, Iman; Orouji, Ali A.

    2018-01-01

    This paper investigates the electrical properties of electron reflector layer to survey materials as an electron reflector (ER) for chalcopyrite CuInGaSe solar cells. The purpose is optimizing the conduction-band and valence-band offsets at ER layer/CIGS junction that can effectively reduce the electron recombination near the back contact. In this work, an initial device model based on an experimental solar cell is established, then the properties of a solar cell with electron reflector layer are physically analyzed. The electron reflector layer numerically applied to baseline model of thin-film CIGS cell fabricated by ZSW (efficiency = 20.3%). The improvement of efficiency is achievable by electron reflector layer materials with Eg > 1.3 eV and -0.3 AsS4 as well as CuIn1-xGaxSe (x > 0.5) are efficient electron reflector layer materials, so the potential improvement in efficiency obtained relative gain of 5%.

  19. A Medipix quantum area detector allows rotation electron diffraction data collection from submicrometre three-dimensional protein crystals

    Energy Technology Data Exchange (ETDEWEB)

    Nederlof, Igor; Genderen, Eric van; Li, Yao-Wang; Abrahams, Jan Pieter, E-mail: abrahams@chem.leidenuniv.nl [Leiden University, Einsteinweg 55, 2333 CC Leiden (Netherlands)

    2013-07-01

    An ultrasensitive Medipix2 detector allowed the collection of rotation electron-diffraction data from single three-dimensional protein nanocrystals for the first time. The data could be analysed using the standard X-ray crystallography programs MOSFLM and SCALA. When protein crystals are submicrometre-sized, X-ray radiation damage precludes conventional diffraction data collection. For crystals that are of the order of 100 nm in size, at best only single-shot diffraction patterns can be collected and rotation data collection has not been possible, irrespective of the diffraction technique used. Here, it is shown that at a very low electron dose (at most 0.1 e{sup −} Å{sup −2}), a Medipix2 quantum area detector is sufficiently sensitive to allow the collection of a 30-frame rotation series of 200 keV electron-diffraction data from a single ∼100 nm thick protein crystal. A highly parallel 200 keV electron beam (λ = 0.025 Å) allowed observation of the curvature of the Ewald sphere at low resolution, indicating a combined mosaic spread/beam divergence of at most 0.4°. This result shows that volumes of crystal with low mosaicity can be pinpointed in electron diffraction. It is also shown that strategies and data-analysis software (MOSFLM and SCALA) from X-ray protein crystallography can be used in principle for analysing electron-diffraction data from three-dimensional nanocrystals of proteins.

  20. A Medipix quantum area detector allows rotation electron diffraction data collection from submicrometre three-dimensional protein crystals

    International Nuclear Information System (INIS)

    Nederlof, Igor; Genderen, Eric van; Li, Yao-Wang; Abrahams, Jan Pieter

    2013-01-01

    An ultrasensitive Medipix2 detector allowed the collection of rotation electron-diffraction data from single three-dimensional protein nanocrystals for the first time. The data could be analysed using the standard X-ray crystallography programs MOSFLM and SCALA. When protein crystals are submicrometre-sized, X-ray radiation damage precludes conventional diffraction data collection. For crystals that are of the order of 100 nm in size, at best only single-shot diffraction patterns can be collected and rotation data collection has not been possible, irrespective of the diffraction technique used. Here, it is shown that at a very low electron dose (at most 0.1 e − Å −2 ), a Medipix2 quantum area detector is sufficiently sensitive to allow the collection of a 30-frame rotation series of 200 keV electron-diffraction data from a single ∼100 nm thick protein crystal. A highly parallel 200 keV electron beam (λ = 0.025 Å) allowed observation of the curvature of the Ewald sphere at low resolution, indicating a combined mosaic spread/beam divergence of at most 0.4°. This result shows that volumes of crystal with low mosaicity can be pinpointed in electron diffraction. It is also shown that strategies and data-analysis software (MOSFLM and SCALA) from X-ray protein crystallography can be used in principle for analysing electron-diffraction data from three-dimensional nanocrystals of proteins

  1. Process mining routinely collected electronic health records to define real-life clinical pathways during chemotherapy.

    Science.gov (United States)

    Baker, Karl; Dunwoodie, Elaine; Jones, Richard G; Newsham, Alex; Johnson, Owen; Price, Christopher P; Wolstenholme, Jane; Leal, Jose; McGinley, Patrick; Twelves, Chris; Hall, Geoff

    2017-07-01

    There is growing interest in the use of routinely collected electronic health records to enhance service delivery and facilitate clinical research. It should be possible to detect and measure patterns of care and use the data to monitor improvements but there are methodological and data quality challenges. Driven by the desire to model the impact of a patient self-test blood count monitoring service in patients on chemotherapy, we aimed to (i) establish reproducible methods of process-mining electronic health records, (ii) use the outputs derived to define and quantify patient pathways during chemotherapy, and (iii) to gather robust data which is structured to be able to inform a cost-effectiveness decision model of home monitoring of neutropenic status during chemotherapy. Electronic Health Records at a UK oncology centre were included if they had (i) a diagnosis of metastatic breast cancer and received adjuvant epirubicin and cyclosphosphamide chemotherapy or (ii) colorectal cancer and received palliative oxaliplatin and infusional 5-fluorouracil chemotherapy, and (iii) were first diagnosed with cancer between January 2004 and February 2013. Software and a Markov model were developed, producing a schematic of patient pathways during chemotherapy. Significant variance from the assumed care pathway was evident from the data. Of the 535 patients with breast cancer and 420 with colorectal cancer there were 474 and 329 pathway variants respectively. Only 27 (5%) and 26 (6%) completed the planned six cycles of chemotherapy without having unplanned hospital contact. Over the six cycles, 169 (31.6%) patients with breast cancer and 190 (45.2%) patients with colorectal cancer were admitted to hospital. The pathways of patients on chemotherapy are complex. An iterative approach to addressing semantic and data quality issues enabled the effective use of routinely collected patient records to produce accurate models of the real-life experiences of chemotherapy patients and

  2. Electron microscopy study of hardened layers structure at electrospark alloying the VT-18 titanium alloy with aluminium

    International Nuclear Information System (INIS)

    Pilyankevich, A.N.; Martynenko, A.N.; Verkhoturov, A.D.; Paderno, V.N.

    1979-01-01

    Presented are the results of metallographic, electron-microscopic, and X-ray structure analysis, of microhardness measurements and of the study of the electrode weight changes at electrospark alloying the VT-18 titanium alloy with aluminium. It is shown, that pulsating thermal and mechanical loadings in the process of electrospark alloying result in the electrode surface electroerosion, a discrete relief is being formed, which changes constantly in the process depending on the alloying time. Though with the process time the cathode weight gain increases, microareas of fracture in the hardened layer appear already at the initial stages of electrospark alloying

  3. Minimizing performance degradation induced by interfacial recombination in perovskite solar cells through tailoring of the transport layer electronic properties

    Directory of Open Access Journals (Sweden)

    Liang Xu

    2018-03-01

    Full Text Available The performance of hybrid organic-inorganic metal halide perovskite solar cells is investigated using one-dimensional drift-diffusion device simulations. We study the effects of interfacial defect density, doping concentration, and electronic level positions of the charge transport layer (CTL. Choosing CTLs with a favorable band alignment, rather than passivating CTL-perovskite interfacial defects, is shown to be beneficial for maintaining high power-conversion efficiency, due to reduced minority carrier density arising from a favorable local electric field profile. Insights from this study provide theoretical guidance on practical selection of CTL materials for achieving high-performance perovskite solar cells.

  4. Electrochemical properties of porous carbon black layer as an electron injector into iodide redox couple

    International Nuclear Information System (INIS)

    Kim, Jung-Min; Rhee, Shi-Woo

    2012-01-01

    Highlights: ► Carbon black (CB) porous layer for triiodide (I 3 − ) ion reduction is coated with spray coating method at 120 °C on the fluorine-doped tin oxide glass. ► The electrochemical impedance spectroscopy is analyzed for a symmetric cell and a new circuit model is applied to identify electrochemical parameters. ► Decreased particle size and increased thickness improve the catalytic activity because of the increase in the surface area and the conductivity of the CB layer. - Abstract: Electrochemical properties of carbon black (CB) porous layer as a counter electrode in dye-sensitized solar cells (DSC) are studied. CB electrode for triiodide (I 3 − ) ion reduction is coated with spray coating method on the fluorine-doped tin oxide glass at 120 °C. The CB particle size is varied from 20 nm to 90 nm and the CB electrode thickness is controlled from 1 μm to 9 μm by controlling the spraying time. The electrochemical impedance spectroscopy is analyzed for a symmetric cell and a new circuit model is applied to identify electrochemical parameters. As the CB particle size is decreased, the catalytic activity is improved because of the increase in the surface area and the conductivity of the CB layer. Increased CB electrode thickness also improves the catalytic activity and leads to the low charge transfer resistance at the electrolyte/CB electrode interface. The CB counter electrode with the particle size of 20 nm and the thickness of 9 μm for DSC shows the energy conversion efficiency of 7.2% with the highest fill factor (FF) of 65.6%, which is similar to the Pt counter electrode with FF of 65.8% and the efficiency of 7.6%.

  5. A scanning electron microscopic study of smear layer remaining following use of Greater Taper rotary instruments

    Directory of Open Access Journals (Sweden)

    S Soumya

    2011-01-01

    Full Text Available The aim of this in vitro study was to evaluate the smear layer in the root canal following the use of Ni-Ti hand ProTaper, HERO shaper and Twisted rotary instruments. Fifteen freshly extracted single rooted human mandibular premolar teeth were selected. Crowns of all teeth were cut off at the cemento-enamel junction with a carborundum disc. The roots were then randomly divided into three groups of 5 samples each. The working length of all teeth was established by the insertion of an endodontic instrument into the canal until its tip is visible at the apical foramen and then subtracted by 0.5 mm. A sequential crown down technique was carried out in all the three groups as follows: Group-I- Specimens in this group were instrumented with ProTaper Ni-Ti hand instruments. Group-II- Specimens were instrumented with HERO shapers. Group-III - The specimens in this group were instrumented with Twisted rotary instruments. Irrigation was done with 3% NaOCl and 15% EDTA in all the three groups. Teeth were carefully split with hammer and chisel and stored in small labeled bottles containing normal saline until SEM evaluation. Results showed that when comparing ProTaper files, Twisted rotary instruments and HERO shaper instruments, HERO shaper series of rotary instruments showed maximum amount of smear layer followed by the Twisted rotary instruments. Hand instruments produced least amount of smear layer.

  6. Electron beam induced coloration and luminescence in layered structure of WO3 thin films grown by pulsed dc magnetron sputtering

    International Nuclear Information System (INIS)

    Karuppasamy, A.; Subrahmanyam, A.

    2007-01-01

    Tungsten oxide thin films have been deposited by pulsed dc magnetron sputtering of tungsten in argon and oxygen atmosphere. The as-deposited WO 3 film is amorphous, highly transparent, and shows a layered structure along the edges. In addition, the optical properties of the as-deposited film show a steplike behavior of extinction coefficient. However, the electron beam irradiation (3.0 keV) of the as-deposited films results in crystallization, coloration (deep blue), and luminescence (intense red emission). The above changes in physical properties are attributed to the extraction of oxygen atoms from the sample and the structural modifications induced by electron bombardment. The present method of coloration and luminescence has a potential for fabricating high-density optical data storage device

  7. An investigation of the reflection of low energy electrons from the surfaces of layered transition metal dichalcogenides

    International Nuclear Information System (INIS)

    Smith, A.E.; Mohamed, M.H.; Wohlenberg, T.; Johnson, E.; Chadderton, L.T.; Moeller, P.J.

    1980-01-01

    Experimental measurements, using the total current spectroscopy (TCS) technique, on the energy dependence of the reflection of low energy electrons from clean surfaces of layered transition metal dichalcogenides are reported for the molybdenum semiconductor compounds 2H-MoS 2 and 2H-MoSe 2 . A simple model calculation involving both elastic and inelastic scattering is presented and correspondence established with the experimental spectra. In this picture information on the electronic band structure of the materials can then be extracted from the single particle component of the inelastic scattering. The model is extended to show that a feature in the 2H-MoS 2 experimental spectrum may be attributed to the excitation of an intermediate plasmon. (Auth.)

  8. Determination of pigments in colour layers on walls of some selected historical buildings using optical and scanning electron microscopy

    International Nuclear Information System (INIS)

    Skapin, A. Sever; Ropret, P.; Bukovec, P.

    2007-01-01

    For successful restoration of painted walls and painted coloured finishing coats it is necessary to determine the composition of the original colour layers. Identification of the pigments used in The Cistercian Abbey of Sticna and The Manor of Novo Celje was carried out using optical and scanning electron microscopy. Selected samples of wall paintings were inspected by the combined application of an optical microscope and a low-vacuum Scanning Electron Microscope to determine their colour and structural features and to identify the position of individual pigment grains. Energy dispersive spectroscopy was used to determine the elemental distribution on selected surfaces and elemental composition of individual pigments. It was found that the most abundantly used pigments were iron oxide red, cinnabar, green earth, umber, calcium carbonate white, ultramarine, yellow ochre and carbon black. These identifications have allowed us to compare the use of various pigments in buildings from different historical periods

  9. Non-Fourier Heat Transfer with Phonons and Electrons in a Circular Thin Layer Surrounding a Hot Nanodevice

    Directory of Open Access Journals (Sweden)

    Vito Antonio Cimmelli

    2015-07-01

    Full Text Available A nonlocal model for heat transfer with phonons and electrons is applied to infer the steady-state radial temperature profile in a circular layer surrounding an inner hot component. Such a profile, following by the numerical solution of the heat equation, predicts that the temperature behaves in an anomalous way, since for radial distances from the heat source smaller than the mean-free path of phonons and electrons, it increases for increasing distances. The compatibility of this temperature behavior with the second law of thermodynamics is investigated by calculating numerically the local entropy production as a function of the radial distance. It turns out that such a production is positive and strictly decreasing with the radial distance.

  10. Spontaneous breaking of time-reversal symmetry in strongly interacting two-dimensional electron layers in silicon and germanium.

    Science.gov (United States)

    Shamim, S; Mahapatra, S; Scappucci, G; Klesse, W M; Simmons, M Y; Ghosh, A

    2014-06-13

    We report experimental evidence of a remarkable spontaneous time-reversal symmetry breaking in two-dimensional electron systems formed by atomically confined doping of phosphorus (P) atoms inside bulk crystalline silicon (Si) and germanium (Ge). Weak localization corrections to the conductivity and the universal conductance fluctuations were both found to decrease rapidly with decreasing doping in the Si:P and Ge:P delta layers, suggesting an effect driven by Coulomb interactions. In-plane magnetotransport measurements indicate the presence of intrinsic local spin fluctuations at low doping, providing a microscopic mechanism for spontaneous lifting of the time-reversal symmetry. Our experiments suggest the emergence of a new many-body quantum state when two-dimensional electrons are confined to narrow half-filled impurity bands.

  11. Electron transport in a bilayer graphene/layered superconductor NbSe2 junction: effect of work function difference

    Science.gov (United States)

    Yarimizu, Katsuhide; Tomori, Hikari; Watanabe, Kenji; Taniguchi, Takashi; Kanda, Akinobu

    2018-03-01

    We have experimentally studied electron transport in a bilayer graphene (BLG)/layered superconductor NbSe2 junction encapsulated with hexagonal boron nitride. The junction exhibits nonlinear current-voltage characteristics which strongly depend on the gate voltage around the charge neutrality point (CNP) of the BLG. Besides, we observe that the gate voltage dependence of electron transport in the BLG portion close to the junction interface is different from that of the BLG portion apart from the interface, indicating that the spatial variation of the Dirac point in the charge transfer region due to the difference in work function between superconductor and graphene needs to be considered in the analysis of the superconducting proximity effect.

  12. Electron-ion-plasma methods of nanostructuring the surface layer of alloys on the basis of the titanium and aluminium

    International Nuclear Information System (INIS)

    Klopotov, A.A.; Abzaev, Yu.A.; Petrikova, E.A.; Budovskikh, E.A.; Gromov, V.E.

    2013-01-01

    The analysis of multicomponent systems Ti-Si-X (by X = Al, B is made, C) are provided binary and ternary (Ti-Si-B, Ti-Si-Al, Ti-Si-C) system phase equilibria and possibility of formation of a wide range of the metastable compounds received as a result of application of nonequilibrium conditions at processing of a material by concentrated streams of energy is revealed. Methods of the X-ray diffraction analysis and electronic diffraction microscopy executed researches of phase structure of a surface layer of technically pure titan of VT1-0, and alpax of the eutectic structure, subjected to processing by the concentrated streams of energy (radiation by plasma of electric explosion of a carrying-out material and a high-intensity pulse electronic bunch). (authors)

  13. Interfacial Energy Alignment at the ITO/Ultra-Thin Electron Selective Dielectric Layer Interface and Its Effect on the Efficiency of Bulk-Heterojunction Organic Solar Cells.

    Science.gov (United States)

    Itoh, Eiji; Goto, Yoshinori; Saka, Yusuke; Fukuda, Katsutoshi

    2016-04-01

    We have investigated the photovoltaic properties of an inverted bulk heterojunction (BHJ) cell in a device with an indium-tin-oxide (ITO)/electron selective layer (ESL)/P3HT:PCBM active layer/MoOx/Ag multilayered structure. The insertion of only single layer of poly(diallyl-dimethyl-ammonium chloride) (PDDA) cationic polymer film (or poly(ethyleneimine) (PEI) polymeric interfacial dipole layer) and titanium oxide nanosheet (TN) films as an ESL effectively improved cell performance. Abnormal S-shaped curves were observed in the inverted BHJ cells owing to the contact resistance across the ITO/active layer interface and the ITO/PDDA/TN/active layer interface. The series resistance across the ITO/ESL interface in the inverted BHJ cell was successfully reduced using an interfacial layer with a positively charged surface potential with respect to ITO base electrode. The positive dipole in PEI and the electronic charge phenomena at the electrophoretic deposited TN (ED-TN) films on ITO contributed to the reduction of the contact resistance at the electrode interface. The surface potential measurement revealed that the energy alignment by the transfer of electronic charges from the ED-TN to the base electrodes. The insertion of the ESL with a large positive surface potential reduced the potential barrier for the electron injection at ITO/TN interface and it improved the photovoltaic properties of the inverted cell with an ITO/TN/active layer/MoOx/Ag structure.

  14. Polymer solar cells with efficiency >10% enabled via a facile solution-processed Al-doped ZnO electron transporting layer

    KAUST Repository

    Jagadamma, Lethy Krishnan; Al-Senani, Mohammed; Amassian, Aram

    2015-01-01

    The present work details a facile and low-temperature (125C) solution-processed Al-doped ZnO (AZO) buffer layer functioning very effectively as electron accepting/hole blocking layer for a wide range of polymer:fullerene bulk heterojunction systems

  15. High resolution electron microscopy of a small crack at the superficial layer of enamel.

    Science.gov (United States)

    Hayashi, Y

    1994-12-01

    A small enamel crack was investigated using a high resolution electron microscope. The inside of the crack was filled with aggregates of irregularly oriented plate-like crystals. Amorphous mineral deposits were observed among these aggregates at a low magnification. Selected area electron diffractions indicated that the plate-like crystals consisted of hydroxyapatite (OH-AP), and that the amorphous mineral deposits were a mixture of OH-AP and whitlockite. These findings indicate that this crack may have been formed by occlusal and/or masticatory stress, and that a natural occlusion might occur through mineral deposition at the small crack such as in this case.

  16. The INTERBALL-Tail ELECTRON experiment: initial results on the low-latitude boundary layer of the dawn magnetosphere

    Directory of Open Access Journals (Sweden)

    J.-A. Sauvaud

    Full Text Available The Toulouse electron spectrometer flown on the Russian project INTERBALL-Tail performs electron measurements from 10 to 26 000 eV over a 4 solid angle in a satellite rotation period. The INTERBALL-Tail probe was launched on 3 August 1995 together with a subsatellite into a 65° inclination orbit with an apogee of about 30 RE. The INTERBALL mission also includes a polar spacecraft launched in August 1996 for correlated studies of the outer magnetosphere and of the auroral regions. We present new observations concerning the low-latitude boundary layers (LLBL of the magnetosphere obtained near the dawn magnetic meridian. LLBL are encountered at the interface between two plasma regimes, the magnetosheath and the dayside extension of the plasma sheet. Unexpectedly, the radial extent of the region where LLBL electrons can be sporadically detected as plasma clouds can reach up to 5 RE inside the magnetopause. The LLBL core electrons have an average energy of the order of 100 eV and are systematically field-aligned and counterstreaming. As a trend, the temperature of the LLBL electrons increases with decreasing distance to Earth. Along the satellite orbit, the apparent time of occurrence of LLBL electrons can vary from about 5 to 20 min from one pass to another. An initial first comparison between electron- and magnetic-field measurements indicates that the LLBL clouds coincide with a strong increase in the magnetic field (by up to a factor of 2. The resulting strong magnetic field gradient can explain why the plasma-sheet electron flux in the keV range is strongly depressed in LLBL occurrence regions (up to a factor of sim10. We also show that LLBL electron encounters are related to field-aligned current structures and that wide LLBL correspond to northward interplanetary magnetic field. Evidence for LLBL/plasma-sheet electron leakage into the magnetosheath during southward IMF is also presented.

  17. Single-layer 1T‧-MoS2 under electron irradiation from ab initio molecular dynamics

    Science.gov (United States)

    Pizzochero, Michele; Yazyev, Oleg V.

    2018-04-01

    Irradiation with high-energy particles has recently emerged as an effective tool for tailoring the properties of two-dimensional transition metal dichalcogenides. In order to carry out an atomically-precise manipulation of the lattice, a detailed understanding of the beam-induced events occurring at the atomic scale is necessary. Here, we investigate the response of 1T' -MoS2 to the electron irradiation by ab initio molecular dynamics means. Our simulations suggest that an electron beam with energy smaller than 75 keV does not result in any knock-on damage. The displacement threshold energies are different for the two nonequivalent sulfur atoms in 1T' -MoS2 and strongly depend on whether the top or bottom chalcogen layer is considered. As a result, a careful tuning of the beam energy can promote the formation of ordered defects in the sample. We further discuss the effect of the electron irradiation in the neighborhood of a defective site, the mobility of the sulfur vacancies created and their tendency to aggregate. Overall, our work provides useful guidelines for the imaging and the defect engineering of 1T' -MoS2 using electron microscopy.

  18. Electronic structure of layered ferroelectric high-k titanate La2Ti2O7

    DEFF Research Database (Denmark)

    Atuchin, V. V.; Gavrilova, T. A.; Grivel, Jean-Claude

    2009-01-01

    The electronic structure of binary titanate La2Ti2O7 has been studied by x-ray photoelectron spectroscopy. Spectral features of valence band and all constituent element core levels have been considered. The Auger parameters of titanium and oxygen in La2Ti2O7 are determined as alpha(Ti) = 872...

  19. Electronic structure of layered ferroelectric high-k titanate Pr2Ti2O7

    DEFF Research Database (Denmark)

    Atuchin, V.V.; Gavrilova, T.A.; Grivel, Jean-Claude

    2012-01-01

    The spectroscopic parameters and electronic structure of binary titanate Pr2Ti2O7 have been studied by IR-, Raman and X-ray photoelectron spectroscopy (XPS) for the powder sample prepared by solid state synthesis. The spectral features of valence band and all constituent element core levels have...

  20. Electronic structure of layered titanate Nd2Ti2O7

    DEFF Research Database (Denmark)

    Atuchin, V.V.; Gavrilova, T.A.; Grivel, Jean-Claude

    2008-01-01

    The electronic structure of the binary titanate Nd2Ti2O7 has been studied by X-ray photoelectron spectroscopy (XPS). Spectral features of the valence band and all constituent element core levels have been considered. The Auger parameters of titanium and oxygen in Nd2Ti2O7 are determined as alpha...

  1. Enhancing Carrier Injection Using Graded Superlattice Electron Blocking Layer for UVB Light-Emitting Diodes

    KAUST Repository

    Janjua, Bilal; Ng, Tien Khee; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

    2014-01-01

    is changed from 0.8 to 0.56 in steps of 0.06. Graded SL was found to be effective in reducing electron leakage and enhancing hole injection into the active region. Due to our band engineering scheme for EBL, four orders-of-magnitude enhancement were observed

  2. Simulation of 10 A electron-beam formation and collection for a high current electron-beam ion source

    International Nuclear Information System (INIS)

    Kponou, A.; Beebe, E.; Pikin, A.; Kuznetsov, G.; Batazova, M.; Tiunov, M.

    1998-01-01

    Presented is a report on the development of an electron-beam ion source (EBIS) for the relativistic heavy ion collider at Brookhaven National Laboratory (BNL) which requires operating with a 10 A electron beam. This is approximately an order of magnitude higher current than in any existing EBIS device. A test stand is presently being designed and constructed where EBIS components will be tested. It will be reported in a separate paper at this conference. The design of the 10 A electron gun, drift tubes, and electron collector requires extensive computer simulations. Calculations have been performed at Novosibirsk and BNL using two different programs, SAM and EGUN. Results of these simulations will be presented. copyright 1998 American Institute of Physics

  3. Simulation of 10 A electron-beam formation and collection for a high current electron-beam ion source

    Science.gov (United States)

    Kponou, A.; Beebe, E.; Pikin, A.; Kuznetsov, G.; Batazova, M.; Tiunov, M.

    1998-02-01

    Presented is a report on the development of an electron-beam ion source (EBIS) for the relativistic heavy ion collider at Brookhaven National Laboratory (BNL) which requires operating with a 10 A electron beam. This is approximately an order of magnitude higher current than in any existing EBIS device. A test stand is presently being designed and constructed where EBIS components will be tested. It will be reported in a separate paper at this conference. The design of the 10 A electron gun, drift tubes, and electron collector requires extensive computer simulations. Calculations have been performed at Novosibirsk and BNL using two different programs, SAM and EGUN. Results of these simulations will be presented.

  4. Low-Energy Electron-Stimulated Luminescence of Thin H20 and D20 Layers on Pt(111)

    International Nuclear Information System (INIS)

    Petrik, Nikolay G.; Kimmel, Greg A.

    2005-01-01

    The electron-stimulated luminescence (ESL) from amorphous solid water and crystalline ice films deposited on Pt(111) at 100 K is investigated as a function of the film thickness, incident electron energy (5 ? 1000 eV), isotopic composition, and film structure. The ESL emission spectrum has a characteristic double-peaked shape that has been attributed to a transition between a superexcited state ( ) and the dissociative, first excited state ( ) in water: Comparing the electron-stimulated luminescence and O2 electron-stimulated desorption (ESD) yields versus incident electron energy, we find the ESL threshold blue-shifted from the O2 ESD threshold by ∼3 eV, which is close to the center of the emission spectrum near 400 nm and supports the assignment for the ESL. For thin films, radiative and non-radiative interactions with the substrate tend to quench the luminescence. The luminescence yield increases with coverage since the interactions with the substrate become less important. The ESL yield from D2O is ∼ 4 times higher than from H2O. Using layered films of H2O and D2O, this sizable isotopic effect on the ESL is exploited to spatially profile the luminescence emission within the ASW films. These experiments show that most of the luminescence is emitted from within the penetration depth of the incident electron. However, the results depend on the order of the isotopes in the film, and this asymmetry can be modeled by assuming some migration of the excited states within the film. The ESL is very sensitive to defects and structural changes in solid water, and the emission yield is significantly higher from amorphous films than from crystalline ice

  5. Peculiarities of interaction of the p{sub z}-, π- electrons and the σ{sub p}-holes at the top 1–6 layers of HOPG

    Energy Technology Data Exchange (ETDEWEB)

    Dementjev, A.P., E-mail: demcarbon@yandex.ru; Ivanov, K.E.

    2017-03-31

    Graphical abstract: The formation of π-bands and σ{sub p}- holes as result of the p{sub z} → π transitions in 2–6 graphene layers HOPG. The valence band spectrum taken from Murday et al. (1981). - Abstract: The present work continues the analysis of results of Dementjev et al. (2015) in order to identify the interlayer interactions of the π-bands. Analysis of the N(E) C KVV Auger spectra of highly-ordered pyro-graphite showed the absence of the electron exchange between the π-bands in 1–6 layers. Since the π-bands are formed by the p{sub z} → π transitions, one can suggest that the π-band occupation at each graphene layer is formed by the p{sub z}-electrons of this layer. Since the p{sub z} electrons belong to the σ{sub p}-bands, the p{sub z} → π transitions in the σ{sub p}-bands in each of 2–6 graphene layers result in formation of holes H, whose concentration is equal to the concentration of electrons in the π-bands [H{sub i}] ≡ [π{sub i}]. This shows the origin of the ambipolar conductivity in graphene. The absence of the electronic interaction between the π-bands allows a suggestion that the interaction between top six graphene layers is due to the van der Waals electrostatic attractive forces. These forces promote the p{sub z} → π transitions in each of the 2–6 graphene layers and depend on the number of graphene layers above. The N(E) C KVV Auger spectra allow identification of number (1–6) of graphene layers and the π-band occupation at each of the layer. For the first time a specification of the van der Waals forces in HOPG was done.

  6. Two-Dimensional Electron Gas at SrTiO3-Based Oxide Heterostructures via Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Sang Woon Lee

    2016-01-01

    Full Text Available Two-dimensional electron gas (2DEG at an oxide interface has been attracting considerable attention for physics research and nanoelectronic applications. Early studies reported the formation of 2DEG at semiconductor interfaces (e.g., AlGaAs/GaAs heterostructures with interesting electrical properties such as high electron mobility. Besides 2DEG formation at semiconductor junctions, 2DEG was realized at the interface of an oxide heterostructure such as the LaAlO3/SrTiO3 (LAO/STO heterojunction. The origin of 2DEG was attributed to the well-known “polar catastrophe” mechanism in oxide heterostructures, which consist of an epitaxial LAO layer on a single crystalline STO substrate among proposed mechanisms. Recently, it was reported that the creation of 2DEG was achieved using the atomic layer deposition (ALD technique, which opens new functionality of ALD in emerging nanoelectronics. This review is focused on the origin of 2DEG at oxide heterostructures using the ALD process. In particular, it addresses the origin of 2DEG at oxide interfaces based on an alternative mechanism (i.e., oxygen vacancies.

  7. Advanced metal lift-off process using electron-beam flood exposure of single-layer photoresist

    Science.gov (United States)

    Minter, Jason P.; Ross, Matthew F.; Livesay, William R.; Wong, Selmer S.; Narcy, Mark E.; Marlowe, Trey

    1999-06-01

    In the manufacture of many types of integrated circuit and thin film devices, it is desirable to use a lift-of process for the metallization step to avoid manufacturing problems encountered when creating metal interconnect structures using plasma etch. These problems include both metal adhesion and plasma etch difficulties. Key to the success of the lift-off process is the creation of a retrograde or undercut profile in the photoresists before the metal deposition step. Until now, lift-off processing has relied on costly multi-layer photoresists schemes, image reversal, and non-repeatable photoresist processes to obtain the desired lift-off profiles in patterned photoresist. This paper present a simple, repeatable process for creating robust, user-defined lift-off profiles in single layer photoresist using a non-thermal electron beam flood exposure. For this investigation, lift-off profiles created using electron beam flood exposure of many popular photoresists were evaluated. Results of lift-off profiles created in positive tone AZ7209 and ip3250 are presented here.

  8. Enhanced performance of inverted organic photovoltaic cells using CNTs-TiO(X) nanocomposites as electron injection layer.

    Science.gov (United States)

    Zhang, Hong; Xu, Meifeng; Cui, Rongli; Guo, Xihong; Yang, Shangyuan; Liao, Liangsheng; Jia, Quanjie; Chen, Yu; Dong, Jinquan; Sun, Baoyun

    2013-09-06

    In this study, we fabricated inverted organic photovoltaic cells with the structure ITO/carbon nanotubes (CNTs)-TiO(X)/P3HT:PCBM/MoO₃/Al by spin casting CNTs-TiO(X) nanocomposite (CNTs-TiO(X)) as the electron injection layer onto ITO/glass substrates. The power conversion efficiency (PCE) of the 0.1 wt% single-walled nanotubes (SWNTs)-TiO(X) nanocomposite device was almost doubled compared with the TiO(X) device, but with increasing concentration of the incorporated SWNTs in the TiO(X) film, the performance of the devices appeared to decrease rapidly. Devices with multi-walled NTs in the TiO(X) film have a similar trend. This phenomenon mainly depends on the inherent physical and chemical characteristics of CNTs such as their high surface area, their electron-accepting properties and their excellent carrier mobility. However, with increasing concentration of CNTs, CNTs-TiO(X) current leakage pathways emerged and also a recombination of charges at the interfaces. In addition, there was a significant discovery. The incorporated CNTs were highly conducive to enhancing the degree of crystallinity and the ordered arrangement of the P3HT in the active layers, due to the intermolecular π-π stacking interactions between CNTs and P3HT.

  9. Graphene-cyclodextrin-cytochrome c layered assembly with improved electron transfer rate and high supramolecular recognition capability.

    Science.gov (United States)

    Gong, Cheng-Bin; Guo, Cong-Cong; Jiang, Dan; Tang, Qian; Liu, Chang-Hua; Ma, Xue-Bing

    2014-06-01

    This study aimed to develop a new graphene-based layered assembly, named graphene-cyclodextrin-cytochrome c with improved electron transfer rate. This assembly has combined high conductivity of graphene nanosheets (GNs), selectively binding properties and electronegativity of cyclodextrins (CDs), as well as electropositivity of cytochrome c (Cyt c). This assembly can also mimic the confined environments of the intermembrane space of mitochondria. A β-cyclodextrin (β-CD) functionalized GN (GN-CD) assembly was initially prepared by a simple wet-chemical strategy, i.e., in situ thermal reduction of graphene oxide with hydrazine hydrate in the presence of β-CD. Cyt c was then intercalated to the GN-CD assembly to form a layered self-assembled structure, GN-CD-Cyt c, through electrostatic interaction. Compared with GNs and GN-CD, GN-CD-Cyt c assembly displayed improved electron transfer rate and high supramolecular recognition capability toward six probe molecules. Copyright © 2014 Elsevier B.V. All rights reserved.

  10. Electrical response of electron selective atomic layer deposited TiO2‑x heterocontacts on crystalline silicon substrates

    Science.gov (United States)

    Ahiboz, Doğuşcan; Nasser, Hisham; Aygün, Ezgi; Bek, Alpan; Turan, Raşit

    2018-04-01

    Integration of oxygen deficient sub-stoichiometric titanium dioxide (TiO2‑x) thin films as the electron transporting-hole blocking layer in solar cell designs are expected to reduce fabrication costs by eliminating high temperature processes while maintaining high conversion efficiencies. In this paper, we conducted a study to reveal the electrical properties of TiO2‑x thin films grown on crystalline silicon (c-Si) substrates by atomic layer deposition (ALD) technique. Effect of ALD substrate temperature, post deposition annealing, and doping type of the c-Si substrate on the interface states and TiO2‑x bulk properties were extracted by performing admittance (C-V, G-V) and current-voltage (J-V) measurements. Moreover, the asymmetry in C-V and J-V measurements between the p-n type and n-n TiO2‑x-c-Si heterojunction types were examined and the electron transport selectivity of TiO2‑x was revealed.

  11. Atomic-scale observation of structural and electronic orders in the layered compound α-RuCl3

    Science.gov (United States)

    Ziatdinov, M.; Banerjee, A.; Maksov, A.; Berlijn, T.; Zhou, W.; Cao, H. B.; Yan, J.-Q.; Bridges, C. A.; Mandrus, D. G.; Nagler, S. E.; Baddorf, A. P.; Kalinin, S. V.

    2016-12-01

    A pseudospin-1/2 Mott phase on a honeycomb lattice is proposed to host the celebrated two-dimensional Kitaev model which has an elusive quantum spin liquid ground state, and fascinating physics relevant to the development of future templates towards topological quantum bits. Here we report a comprehensive, atomically resolved real-space study by scanning transmission electron and scanning tunnelling microscopies on a novel layered material displaying Kitaev physics, α-RuCl3. Our local crystallography analysis reveals considerable variations in the geometry of the ligand sublattice in thin films of α-RuCl3 that opens a way to realization of a spatially inhomogeneous magnetic ground state at the nanometre length scale. Using scanning tunnelling techniques, we observe the electronic energy gap of ~0.25 eV and intra-unit cell symmetry breaking of charge distribution in individual α-RuCl3 surface layer. The corresponding charge-ordered pattern has a fine structure associated with two different types of charge disproportionation at Cl-terminated surface.

  12. Imaging of phase change materials below a capping layer using correlative infrared near-field microscopy and electron microscopy

    Science.gov (United States)

    Lewin, M.; Hauer, B.; Bornhöfft, M.; Jung, L.; Benke, J.; Michel, A.-K. U.; Mayer, J.; Wuttig, M.; Taubner, T.

    2015-10-01

    Phase Change Materials (PCM) show two stable states in the solid phase with significantly different optical and electronic properties. They can be switched reversibly between those two states and are promising candidates for future non-volatile memory applications. The development of phase change devices demands characterization tools, yielding information about the switching process at high spatial resolution. Scattering-type Scanning Near-field Optical Microscopy (s-SNOM) allows for spectroscopic analyses of the different optical properties of the PCMs on the nm-scale. By correlating the optical s-SNOM images with transmission electron microscopy images of the same sample, we unambiguously demonstrate the correlation of the infrared optical contrast with the structural state of the phase change material. The investigated sample consists of sandwiched amorphous and crystalline regions of Ag 4 In 3 Sb 67 Te 26 below a 100 nm thick ( ZnS ) 80 - ( SiO2 ) 20 capping layer. Our results demonstrate the sensitivity of s-SNOM to small dielectric near-field contrasts even below a comparably thick capping layer ( 100 nm ).

  13. Characterization of oxide layers on amorphous Mg-based alloys by Auger electron spectroscopy with sputter depth profiling

    Energy Technology Data Exchange (ETDEWEB)

    Baunack, S.; Wolff, U. [Leibniz-Institut fuer Festkoerper- und Werkstoffforschung Dresden, Postfach 270016, 01171, Dresden (Germany); Subba Rao, R.V. [Indira Ghandi Centre for Atomic Research, 603 102, Kalpakkam, Tamil Nadu (India)

    2003-04-01

    Amorphous ribbons of Mg-Y-TM-[Ag](TM: Cu, Ni), prepared by melt spinning, were subjected to electrochemical investigations. Oxide layers formed anodically under potentiostatic control in different electrolytes were investigated by AES and sputter depth profiling. Problems and specific features of characterization of the composition of oxide layers and amorphous ternary or quaternary Mg-based alloys have been investigated. In the alloys the Mg(KL{sub 23}L{sub 23}) peak exhibits a different shape compared to that in the pure element. Analysis of the peak of elastically scattered electrons proved the absence of plasmon loss features, characteristic of pure Mg, in the alloy. A different loss feature emerges in Mg(KL{sub 23}L{sub 23}) and Cu(L{sub 23}VV). The system Mg-Y-TM-[Ag] suffers preferential sputtering. Depletion of Mg and enrichment of TM and Y are found. This is attributed mainly to the preferential sputtering of Mg. Thickness and composition of the formed oxide layer depend on the electrochemical treatment. After removing the oxide by sputtering the concentration of the underlying alloy was found to be affected by the treatment. (orig.)

  14. Raman and electronic transport characterization of few- and single-layer-thick α-RuCl3

    Science.gov (United States)

    Zhou, Boyi; Henriksen, Erik

    The layered magnetic semiconductor α-RuCl3, having a honeycomb lattice of spin-1/2 moments, has been identified as a potential candidate material to realize the Kitaev quantum spin liquid. In particular, bulk RuCl3 crystals have been studied and found to be on the cusp of manifesting QSL behavior. As the QSL is primarily a two-dimensional phenomenon, and since the layers of RuCl3 are weakly coupled, we propose to create and study a 2D spin-1/2 honeycomb system by isolating single sheets. Here we report the exfoliation of RuCl3 down to few- and single-layer-thick samples, which we characterize by Raman spectroscopy and atomic force microscopy at room temperature. We will also report our progress on measurements of basic electronic transport properties in the 2D RuCl3 system by controlling the chemical potential via gating in a field-effect configuration.

  15. Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

    International Nuclear Information System (INIS)

    Bairamis, A.; Zervos, Ch.; Georgakilas, A.; Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G.

    2014-01-01

    AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300 nm GaN/ 200 nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8 × 10 12 to 2.1 × 10 13 cm −2 as the AlN barrier thickness increased from 2.2 to 4.5 nm, while a 4.5 nm AlN barrier would result to 3.1 × 10 13 cm −2 on a GaN buffer layer. The 3.0 nm AlN barrier structure exhibited the highest 2DEG mobility of 900 cm 2 /Vs for a density of 1.3 × 10 13 cm −2 . The results were also confirmed by the performance of 1 μm gate-length transistors. The scaling of AlN barrier thickness from 1.5 nm to 4.5 nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63 A/mm. The maximum drain-source current was 1.1 A/mm for AlN barrier thickness of 3.0 nm and 3.7 nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0 nm AlN barrier.

  16. Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

    Energy Technology Data Exchange (ETDEWEB)

    Bairamis, A.; Zervos, Ch.; Georgakilas, A., E-mail: alexandr@physics.uoc.gr [Microelectronics Research Group, IESL, Foundation for Research and Technology-Hellas (FORTH), P.O. Box 1385, GR-71110 Heraklion, Crete (Greece); Department of Physics, University of Crete, P.O. Box 2208, GR-71003 Heraklion, Crete (Greece); Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G. [Microelectronics Research Group, IESL, Foundation for Research and Technology-Hellas (FORTH), P.O. Box 1385, GR-71110 Heraklion, Crete (Greece)

    2014-09-15

    AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300 nm GaN/ 200 nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8 × 10{sup 12} to 2.1 × 10{sup 13} cm{sup −2} as the AlN barrier thickness increased from 2.2 to 4.5 nm, while a 4.5 nm AlN barrier would result to 3.1 × 10{sup 13} cm{sup −2} on a GaN buffer layer. The 3.0 nm AlN barrier structure exhibited the highest 2DEG mobility of 900 cm{sup 2}/Vs for a density of 1.3 × 10{sup 13} cm{sup −2}. The results were also confirmed by the performance of 1 μm gate-length transistors. The scaling of AlN barrier thickness from 1.5 nm to 4.5 nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63 A/mm. The maximum drain-source current was 1.1 A/mm for AlN barrier thickness of 3.0 nm and 3.7 nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0 nm AlN barrier.

  17. Electron density variations in the F2 layer maximum during solar activity cycle

    International Nuclear Information System (INIS)

    Besprozvannaya, A.S.; Kozina, P.E.; AN Kazakhskoj SSR, Alma-Ata. Sektor Ionosfery)

    1988-01-01

    R value, characterizing for F2 relation of hourly median values in solar activity minimum and maximum, is calculated by average monthly values of F2 layer critical frequencies for June, October and December 1958 and 1964. R latitudinal-temporal distributions are plotted for different seasons according to the data from the north hemisphere west and east stations, placed within the Φ'=35-70deg latitudes interval. The following peculiarities of F2 lyer ionization relation with solar activity are pointed out. There are day-time hours, they are - winter one characterized by the gain rate increase with the widths increase, and summer one, realizing the opposite regularity. In night-time hours R value is characterized by the abnormally low values (∼ 1.2) at the latitudes to the south of the ionospheric through and to the pole from it. For all three seasons during 24 hours the periods with ionization gain maximal rate, which occur at nights in summer time and in the hours after the sunset - in winter and equinoctial months, are observed. The quantitative explanation of the peculiarities detected concerning the to-day concepts on F2 layer formation mechanisms is given

  18. Formation of electrostatic double-layers and electron-holes in a low pressure mercury plasma column

    International Nuclear Information System (INIS)

    Petraconi, G; Maciel, Homero S

    2003-01-01

    Experimental studies of the formation of electrostatic double layers (DLs) and electron-holes (e-holes) are reported. The measurements were performed in the positive column of a mercury arc discharge operating in the low-pressure range of (2.0-14.0) x 10 -2 Pa with current density in the range of (3.0-8.0) x 10 3 A m -2 . Stable and unstable modes of the discharge were identified as the current was gradually increased, keeping constant the vapour pressure. The discharge remains stable until a critical current from which a slight increase of the current leads to an unstable regime characterized by high discharge impedance and strong oscillations. This mode ceased after a DL was formed in the plasma column. To induce the DL formation and to transport it smoothly along the discharge column, a low intensity B-field (7-10) x 10 -3 T produced by a movable single coil was used. The B-field locally increases the electron current density and makes the DL form at the centre of the magnetic constriction where it remained at rest. Electrostatic potential structures compatible with ordinary DLs and multiple-layers could be formed in the plasma column by dealing with the combined effects of the operational parameters of the discharge. It is noticeable that a pure e-hole, which is a symmetric triple-layer having a bell shape potential profile, could easily be formed by means of this experimental technique. A partial kinetic description, based on the space charge structure derived from an experimental e-hole, is presented in order to infer the charged particle populations that could contribute to the space charge of the e-hole. Evidence is shown that strong e-hole formation might be driven by an ion beam, therefore it could not be formed in isolation since its formation requires a nearby ion accelerating potential structure. Probe measurements of the plasma properties, at various radial positions of the stable positive column, are also presented. In the stable mode, prior to

  19. Crystal structure stability and electronic properties of the layered nickelate La4Ni3O10

    Science.gov (United States)

    Puggioni, Danilo; Rondinelli, James M.

    2018-03-01

    We investigate the crystal structure and the electronic properties of the trilayer nickelate La4Ni3O10 by means of quantum-mechanical calculations in the framework of the density-functional theory. We find that, at low temperature, La4Ni3O10 undergoes a hitherto unreported structural phase transition and transforms to a new monoclinic P 21/a phase. This phase exhibits electronic properties in agreement with recent angle-resolved photoemission spectroscopy data reported in H. Li et al., [Nat. Commun. 8, 704 (2017), 10.1038/s41467-017-00777-0] and should be considered in models focused on explaining the observed ˜140 K metal-to-metal phase transition.

  20. Tribological Behavior of Coating Cr Layer on 40Cr after Surface Electron Beam Pretreatment

    Science.gov (United States)

    Hu, J. J.; Wang, J.; Jiang, P.; Xu, H. B.; Li, H.; Hou, T. F.

    2017-12-01

    In this study,the friction and wear behavior of PVD coatings which were treated by 5 different processes,based on gear material-40Cr. Analyzing the effects of treating the gear material with electron beam in combination with magnetron sputtering on it,for dry friction and wear properties.The result showed that the electron beam pretreated substrate was useful to improve the tribological performance of coating material.Furthermore, the surface roughness of coating, the bonding force between substrate and coating as well as the load are the main factors affecting the tribological performance of this coating. Most importantly, the contribution of plowing effect on friction coefficient should be considered when the surface roughness is high.

  1. The electronic structure of the metastable layer compound 1T-CrSe2

    NARCIS (Netherlands)

    Fang, C.M.; Groot, R.A. de; Wiegers, G.A.; Haas, C.; vanBruggen, C.F.; deGroot, R.A.

    1997-01-01

    The electronic structure of the metastable compound 1T-CrSe2 (a = 3.399 Å, c = 5.911 Å, space group P_3m1) was calculated with and without spin polarization using the LSW method. The energy is 0.29 eV/mol CrSe2 lower for the spin-polarized calculation. The total magnetic moment of +2.44 μB on Cr

  2. Improved efficiency of NiOx-based p-i-n perovskite solar cells by using PTEG-1 as electron transport layer

    Science.gov (United States)

    Groeneveld, Bart G. H. M.; Najafi, Mehrdad; Steensma, Bauke; Adjokatse, Sampson; Fang, Hong-Hua; Jahani, Fatemeh; Qiu, Li; ten Brink, Gert H.; Hummelen, Jan C.; Loi, Maria Antonietta

    2017-07-01

    We present efficient p-i-n type perovskite solar cells using NiOx as the hole transport layer and a fulleropyrrolidine with a triethylene glycol monoethyl ether side chain (PTEG-1) as electron transport layer. This electron transport layer leads to higher power conversion efficiencies compared to perovskite solar cells with PCBM (phenyl-C61-butyric acid methyl ester). The improved performance of PTEG-1 devices is attributed to the reduced trap-assisted recombination and improved charge extraction in these solar cells, as determined by light intensity dependence and photoluminescence measurements. Through optimization of the hole and electron transport layers, the power conversion efficiency of the NiOx/perovskite/PTEG-1 solar cells was increased up to 16.1%.

  3. Engineered Molecular Layers For Organic Electronic Applications: A Confocal Scanning Raman Spectroscopy (CSRS) Investigation

    International Nuclear Information System (INIS)

    Paez-Sierra, Beynor-Antonio; Kolotovska, Viktoriia; Rangel-Kuoppa, Victor-Tapio

    2011-01-01

    We present CSRS maps of magnetically modified vanadyl phthalocyanine (VOPc) thin films forming conduction channels in organic field-effect transistors (OFETs). The VOPc films with a nominal thickness of about 100 nm were produced by organic molecular beam deposition in high vacuum. During the growth conditions the substrates were exposed to a magnetic field (B) from a bar magnet. The CSRS maps revealed significant changes of the organic fields upon preparation conditions. The highest field effect mobility, electrical current and anisotropy of the CSRS-topography is achieved in layers grown with B parallel to the substrate plane, while intermediate and lowest values are achieved in devices grown with B perpendicular to the substrate and without, respectively.

  4. 77 FR 34127 - Financial Management Service; Proposed Collection of Information: Electronic Transfer Account...

    Science.gov (United States)

    2012-06-08

    ... Information: Electronic Transfer Account (ETA) Financial Agency Agreement AGENCY: Financial Management Service... of information described below: Title: Electronic Transfer Account (ETA) Financial Agency Agreement... public and other Federal agencies to take this opportunity to comment on a continuing information...

  5. Direct measurement of macroscopic electric fields produced by collective effects in electron-impact experiments

    International Nuclear Information System (INIS)

    Velotta, R.; Avaldi, L.; Camilloni, R.; Giammanco, F.; Spinelli, N.; Stefani, G.

    1996-01-01

    The macroscopic electric field resulting from the space charge produced in electron-impact experiments has been characterized by using secondary electrons of well-defined energy (e.g., Auger or autoionizing electrons) as a probe. It is shown that the measurement of the kinetic-energy shifts suffered by secondary electrons is a suitable tool for the analysis of the self-generated electric field in a low-density plasma. copyright 1996 The American Physical Society

  6. Effects of buried high-Z layers on fast electron propagation

    Czech Academy of Sciences Publication Activity Database

    Yang, X.; Xu, H.; Zhuo, H.; Ma, Y.; Shao, F.; Yin, Y.; Borghesi, Marco

    2014-01-01

    Roč. 68, č. 2 (2014), s. 1-7 ISSN 1434-6060 R&D Projects: GA MŠk ED1.1.00/02.0061; GA MŠk EE2.3.20.0279 Grant - others:ELI Beamlines(XE) CZ.1.05/1.1.00/02.0061; LaserZdroj (OP VK 3)(XE) CZ.1.07/2.3.00/20.0279 Institutional support: RVO:68378271 Keywords : laser-plasma interactions * short-pulse * hot-electrons * solid targets * transport * field Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 1.228, year: 2014

  7. The Electronic and Optical Properties of Au Doped Single-Layer Phosphorene

    Science.gov (United States)

    Zhu, Ziqing; Chen, Changpeng; Liu, Jiayi; Han, Lu

    2018-01-01

    The electronic properties and optical properties of single and double Au-doped phosphorene have been comparatively investigated using the first-principles plane-wave pseudopotential method based on density functional theory. The decrease from direct band gap 0.78 eV to indirect band gap 0.22 and 0.11 eV are observed in the single and double Au-doped phosphorene, respectively. The red shifts of absorbing edge occur in both doped systems, which consequently enhance the absorbing of infrared light in phosphorene. Band gap engineering can, therefore, be used to directly tune the optical absorption of phosphorene system by substitutional Au doping.

  8. Dispersion of a layered electron gas with nearest neighbour-tunneling

    International Nuclear Information System (INIS)

    Miesenboeck, H.M.

    1988-09-01

    The dispersion of the first plasmon band is calculated within the Random Phase Approximation for a superlattice of two-dimensional electron-gases, mutually interacting, and with nearest neighbour hopping between the planes. It is further shown that the deviations of this dispersion from the one in systems with zero interplane motion are very small in commonly realized experimental situations and that they are expected to be observable only in samples with plane distances of 100A and less. (author). 15 refs, 3 figs, 1 tab

  9. Controllable high-quality electron beam generation by phase slippage effect in layered targets

    Czech Academy of Sciences Publication Activity Database

    Yu, Q.; Gu, Yanjun; Li, X.F.; Huang, S.; Zhang, F.; Kong, O.; Ma, Y.Y.; Kawata, S.

    2014-01-01

    Roč. 21, č. 11 (2014), "113106-1"-"113106-6" ISSN 1070-664X R&D Projects: GA MŠk ED1.1.00/02.0061; GA MŠk EE2.3.20.0279 Grant - others:ELI Beamlines(XE) CZ.1.05/1.1.00/02.0061; LaserZdroj (OP VK 3)(XE) CZ.1.07/2.3.00/20.0279 Institutional support: RVO:68378271 Keywords : laser * plasma * electrons Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 2.142, year: 2014

  10. 76 FR 56503 - Agency Information Collection Activity (VSO Access to VHA Electronic Health Records) Under OMB...

    Science.gov (United States)

    2011-09-13

    ... (VSO Access to VHA Electronic Health Records) Under OMB Review AGENCY: Veterans Health Administration... Electronic Health Records, VA Form 10- 0400. OMB Control Number: 2900-0710. Type of Review: Extension of a... power of attorney by veterans who have medical information recorded in VHA electronic health records...

  11. 76 FR 40454 - Proposed Information Collection (VSO Access to VHA Electronic Health Records) Activity; Comment...

    Science.gov (United States)

    2011-07-08

    ... Access to VHA Electronic Health Records) Activity; Comment Request AGENCY: Veterans Health Administration... Access to VHA Electronic Health Records, VA Form 10- 0400. OMB Control Number: 2900-0710. Type of Review... were granted power of attorney by veterans who have medical information recorded in VHA electronic...

  12. Collective oscillations of electrons when simulating first principles and nature of anomalous drift along the power axis

    International Nuclear Information System (INIS)

    Majorov, S.A.; Tkachev, A.N.; Yakovlenko, S.I.

    1996-01-01

    A hypothesis is proposed that a metastable supercooled state of a classic Coulomb particle system can be conditioned by a quasiresonance interaction of bound electrons with the collective oscillations of plasma electrons. This interaction is especially important when the Kepler frequency is of the order of Langmuir oscillation frequency (which takes place when the electron orbit radius is of the order of average distance between the charges). Based on the simulation it is shown that the typical time of the Coulomb particle system dipole moment oscillations appears to be of the order of the Langmuir oscillation frequency. 10 refs.; 3 figs

  13. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers.

    Science.gov (United States)

    Lee, Ya-Ju; Yao, Yung-Chi; Huang, Chun-Ying; Lin, Tai-Yuan; Cheng, Li-Lien; Liu, Ching-Yun; Wang, Mei-Tan; Hwang, Jung-Min

    2014-01-01

    In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.

  14. Feasibility of using a handheld electronic device for the collection of patient reported outcomes data from children

    OpenAIRE

    Vinney, Lisa A.; Grade, John; Connor, Nadine P.

    2011-01-01

    The manner in which a communication disorder affects health-related quality of life (QOL) in children is not known. Unfortunately, collection of quality of life data via traditional paper measures is labor intensive and has several other limitations, which hinder the investigation of pediatric quality of life in children. Currently, there is not sufficient research regarding the use of electronic devices to collect pediatric patient reported outcomes in order to address such limitations. Thus...

  15. Electronic structure of layered ferroelectric high-k titanate Pr2Ti2O7

    International Nuclear Information System (INIS)

    Atuchin, V.V.; Gavrilova, T.A.; Grivel, J.-C.; Kesler, V.G.; Troitskaia, I.B.

    2012-01-01

    The spectroscopic parameters and electronic structure of binary titanate Pr 2 Ti 2 O 7 have been studied by IR-, Raman and X-ray photoelectron spectroscopy (XPS) for the powder sample prepared by solid state synthesis. The spectral features of valence band and all constituent element core levels have been considered. The Auger parameters of titanium and oxygen in Pr 2 Ti 2 O 7 have been determined as α Ti =872.8 and α O =1042.3 eV. Variations of cation–anion bond ionicity have been discussed using binding energy differences Δ Ti =(BE O 1s–BE Ti 2p 3/2 )=71.6 eV and Δ Pr =BE(Pr 3d 5/2 )−BE(O 1s)=403.8 eV as key parameters in comparison with those of other titanium- and praseodymium-bearing oxides. Highlights: ► Solid state synthesis of polar titanate Pr 2 Ti 2 O 7 . ► Structural and spectroscopic properties and electronic structure determination. ► Ti–O and Pr–O bonding analysis using Ti 2p 3/2 , Pr 3d 5/2 and O 1s core levels.

  16. Improving antimicrobial prescribing in Irish primary care through electronic data collection and surveillance: a feasibility study.

    Science.gov (United States)

    Galvin, Sandra; Callan, Aoife; Cormican, Martin; Duane, Sinead; Bennett, Kathleen; Murphy, Andrew W; Vellinga, Akke

    2015-07-02

    The increase in the spread of antimicrobial resistance (AMR) in bacterial pathogens and limited availability of new antimicrobials places immense pressure on general practitioners (GPs) to prescribe appropriately. Currently, electronic antimicrobial prescribing data is not routinely collected from GPs in Ireland for surveillance purposes to assess regional specific fluctuations or trends in antimicrobial prescribing. The current study aimed to address this issue by assessing the feasibility of remotely extracting antimicrobial prescribing data from primary care practices in Ireland, for the purpose of assessing prescribing quality using the European Surveillance of Antimicrobial Consumption (ESAC) drug specific quality indicators. Participating practices (n = 30) uploaded data to the Irish Primary Care Research Network (IPCRN). The IPCRN data extraction facility is integrated within the practice patient management software system and permitted the extraction of anonymised patient prescriptions for a one year period, from October 2012 to October 2013. The quality of antimicrobial prescribing was evaluated using the twelve ESAC drug specific quality indicators using the defined daily dose (DDD) per 1,000 inhabitants per day (DID) methodology. National and European prescribing surveillance data (based on total pharmacy sales) was obtained for a comparative analysis. Antimicrobial prescriptions (n = 57,079) for 27,043 patients were obtained from the thirty study practices for a one year period. On average, study practices prescribed a greater proportion of quinolones (37 % increase), in summer compared with winter months, a variation which was not observed in national and European data. In comparison with national data, study practices prescribed higher proportions of β-lactamase-sensitive penicillins (4.98 % vs. 4.3 %) and a greater use of broad spectrum compared to narrow-spectrum antimicrobials (ratio = 9.98 vs. 6.26) was observed. Study practices exceeded the

  17. The effect of electron range on electron beam induced current collection and a simple method to extract an electron range for any generation function

    International Nuclear Information System (INIS)

    Lahreche, A.; Beggah, Y.; Corkish, R.

    2011-01-01

    The effect of electron range on electron beam induced current (EBIC) is demonstrated and the problem of the choice of the optimal electron ranges to use with simple uniform and point generation function models is resolved by proposing a method to extract an electron range-energy relationship (ERER). The results show that the use of these extracted electron ranges remove the previous disagreement between the EBIC curves computed with simple forms of generation model and those based on a more realistic generation model. The impact of these extracted electron ranges on the extraction of diffusion length, surface recombination velocity and EBIC contrast of defects is discussed. It is also demonstrated that, for the case of uniform generation, the computed EBIC current is independent of the assumed shape of the generation volume. -- Highlights: → Effect of electron ranges on modeling electron beam induced current is shown. → A method to extract an electron range for simple form of generation is proposed. → For uniform generation the EBIC current is independent of the choice of it shape. → Uses of the extracted electron ranges remove some existing literature ambiguity.

  18. Technique for electronic measurement of semi-reduction layer using bipolar transistor of junction

    International Nuclear Information System (INIS)

    Santos, Luiz A.P.; Barros, Fabio R.; Santos, Marcus A.P.; Monte, David S.; Santos, Jose A.P.

    2014-01-01

    Recommendations of the International Commission on Radiological Protection (ICRP), the World Health Organization (WHO) and also of the International Atomic Energy Agency (IAEA) suggest equipment for X-rays diagnosis are checked for conformance to their parameters, such as Layer Semi-Reduction (CSR). The importance of verification of diagnostic radiology in parameters is because of have records that forces patients undergoing radiation doses in some clinics, up to 300% the reference values suggested by international agencies which doses are considered unnecessary, and even harmful, either because of physical or variable greatness of being out of control nominal specification, or the fact of having to repeat the radiographs. In this context, the purpose of this study was an innovative methodology that is the use of bipolar transistor junction (TBJ) to measure the aluminum CSR in diagnostic X-ray equipment beams. Although the TBJ be a device invented in the last century, only in recent years have explored their potential as X-ray sensor applied to diagnosis. The study indicates that the tested device can operating the detection of X-rays is properly polarized with electrical signals that can detect interference of the interaction of X-ray photons with the PN junction formed by the base and emitter terminals. The result of the developed technique was compared to CSR measurements obtained with detection systems standards and it was found that the BJT provides values for aluminum CSR relative errors less than 5%

  19. A kinetic model for the transport of electrons in a graphene layer

    Energy Technology Data Exchange (ETDEWEB)

    Fermanian Kammerer, Clotilde, E-mail: Clotilde.Fermanian@u-pec.fr [Laboratoire d' Analyse et de Mathématiques Appliquées, Université Paris Est and CNRS, 61, avenue du Général de Gaulle, 94010 Créteil Cedex (France); Méhats, Florian, E-mail: florian.mehats@univ-rennes1.fr [Institut de Recherche Mathématique de Rennes, IPSO Inria team, Université Rennes 1 and CNRS, Campus de Beaulieu, 35042 Rennes cedex (France)

    2016-12-15

    In this article, we propose a new numerical scheme for the computation of the transport of electrons in a graphene device. The underlying quantum model for graphene is a massless Dirac equation, whose eigenvalues display a conical singularity responsible for non-adiabatic transitions between the two modes. We first derive a kinetic model which takes the form of two Boltzmann equations coupled by a collision operator modeling the non-adiabatic transitions. This collision term includes a Landau–Zener transfer term and a jump operator whose presence is essential in order to ensure a good energy conservation during the transitions. We propose an algorithmic realization of the semi-group solving the kinetic model, by a particle method. We give analytic justification of the model and propose a series of numerical experiments studying the influences of the various sources of errors between the quantum and the kinetic models.

  20. Electronic structure of layered ferroelectric high-k titanate La2Ti2O7

    Science.gov (United States)

    Atuchin, V. V.; Gavrilova, T. A.; Grivel, J.-C.; Kesler, V. G.

    2009-02-01

    The electronic structure of binary titanate La2Ti2O7 has been studied by x-ray photoelectron spectroscopy. Spectral features of valence band and all constituent element core levels have been considered. The Auger parameters of titanium and oxygen in La2Ti2O7 are determined as αTi = 872.4 and αO = 1042.3 eV. Chemical bonding effects have been discussed with binding energy (BE) differences ΔTi = (BE O 1s - BE Ti 2p3/2) = 71.6 eV and ΔLa = (BE La 3d5/2 - BE O 1s) = 304.7 eV as key parameters in comparison with those in several titanium- and lanthanum-bearing oxides.

  1. Electronic structure of layered ferroelectric high-k titanate La2Ti2O7

    International Nuclear Information System (INIS)

    Atuchin, V V; Gavrilova, T A; Grivel, J-C; Kesler, V G

    2009-01-01

    The electronic structure of binary titanate La 2 Ti 2 O 7 has been studied by x-ray photoelectron spectroscopy. Spectral features of valence band and all constituent element core levels have been considered. The Auger parameters of titanium and oxygen in La 2 Ti 2 O 7 are determined as α Ti = 872.4 and α O = 1042.3 eV. Chemical bonding effects have been discussed with binding energy (BE) differences Δ Ti = (BE O 1s - BE Ti 2p 3/2 ) = 71.6 eV and Δ La = (BE La 3d 5/2 - BE O 1s) = 304.7 eV as key parameters in comparison with those in several titanium- and lanthanum-bearing oxides.

  2. Electronic structure of layered titanate Nd 2Ti 2O 7

    Science.gov (United States)

    Atuchin, V. V.; Gavrilova, T. A.; Grivel, J.-C.; Kesler, V. G.

    2008-10-01

    The electronic structure of the binary titanate Nd 2Ti 2O 7 has been studied by X-ray photoelectron spectroscopy (XPS). Spectral features of the valence band and all constituent element core levels have been considered. The Auger parameters of titanium and oxygen in Nd 2Ti 2O 7 are determined as αTi = 873.5 and αO = 1042.2 eV. Chemical bonding effects have been discussed with the binding energies differences ΔTi = (BE O 1s - BE Ti 2p 3/2) = 71.5 eV and ΔNd = (BE Nd 3d 5/2 - BE O 1s) = 452.5 eV as key parameters in comparison with those in other titanium- and neodymium-bearing oxides.

  3. Electronic structure of layered ferroelectric high-k titanate Pr2Ti2O7

    Science.gov (United States)

    Atuchin, V. V.; Gavrilova, T. A.; Grivel, J.-C.; Kesler, V. G.; Troitskaia, I. B.

    2012-11-01

    The spectroscopic parameters and electronic structure of binary titanate Pr2Ti2O7 have been studied by IR-, Raman and X-ray photoelectron spectroscopy (XPS) for the powder sample prepared by solid state synthesis. The spectral features of valence band and all constituent element core levels have been considered. The Auger parameters of titanium and oxygen in Pr2Ti2O7 have been determined as αTi=872.8 and αO=1042.3 eV. Variations of cation-anion bond ionicity have been discussed using binding energy differences ΔTi=(BE O 1s-BE Ti 2p3/2)=71.6 eV and ΔPr=BE(Pr 3d5/2)-BE(O 1s)=403.8 eV as key parameters in comparison with those of other titanium- and praseodymium-bearing oxides.

  4. How Does the Electron Dynamics Affect the Reconnection Rate in a Typical Reconnection Layer?

    Science.gov (United States)

    Hesse, Michael

    2009-01-01

    The question of whether the microscale controls the macroscale or vice-versa remains one of the most challenging problems in plasmas. A particular topic of interest within this context is collisionless magnetic reconnection, where both points of views are espoused by different groups of researchers. This presentation will focus on this topic. We will begin by analyzing the properties of electron diffusion region dynamics both for guide field and anti-parallel reconnection, and how they can be scaled to different inflow conditions. As a next step, we will study typical temporal variations of the microscopic dynamics with the objective of understanding the potential for secular changes to the macroscopic system. The research will be based on a combination of analytical theory and numerical modeling.

  5. Variable range hopping in TiO2 insulating layers for oxide electronic devices

    Directory of Open Access Journals (Sweden)

    Y. L. Zhao

    2012-03-01

    Full Text Available TiO2 thin films are of importance in oxide electronics, e.g., Pt/TiO2/Pt for memristors and Co-TiO2/TiO2/Co-TiO2 for spin tunneling devices. When such structures are deposited at a variety of oxygen pressures, how does TiO2 behave as an insulator? We report the discovery of an anomalous resistivity minimum in a TiO2 film at low pressure (not strongly dependent on deposition temperature. Hall measurements rule out band transport and in most of the pressure range the transport is variable range hopping (VRH though below 20 K it was difficult to differentiate between Mott and Efros-Shklovskii's (ES mechanism. Magnetoresistance (MR of the sample with lowest resistivity was positive at low temperature (for VRH but negative above 10 K indicating quantum interference effects.

  6. Sol-gel derived ZnO as an electron transport layer (ETL) for inverted organic solar cells

    Science.gov (United States)

    Tiwari, D. C.; Dwivedi, Shailendra Kumar; Dipak, Phukhrambam; Chandel, Tarun; Sharma, Rishi

    2017-05-01

    In this work, we present the study of the fabrication process of the sol-gel derived zinc oxide (ZnO) as an electron transport layer (ETL.). The solution processed inverted bulk heterojunction organic solar cells based on a thin film blend of poly (3-hexylthiophene 2, 5-diyl) and [6,6]-phenyl-C61-butyric acid methyl ester is prepared. ZnO thin films are annealed at different temperature to optimize the solar cell performance and their characterization for their structural and optical properties are carried out. We have observed Voc=70mV, Jsc=1.33 µA/cm2 and FF=26% from the inverted heterojunction solar cell.

  7. Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films

    International Nuclear Information System (INIS)

    Bolat, Sami; Tekcan, Burak; Ozgit-Akgun, Cagla; Biyikli, Necmi; Okyay, Ali Kemal

    2015-01-01

    Electronic and optoelectronic devices, namely, thin film transistors (TFTs) and metal–semiconductor–metal (MSM) photodetectors, based on GaN films grown by hollow cathode plasma-assisted atomic layer deposition (PA-ALD) are demonstrated. Resistivity of GaN thin films and metal-GaN contact resistance are investigated as a function of annealing temperature. Effect of the plasma gas and postmetallization annealing on the performances of the TFTs as well as the effect of the annealing on the performance of MSM photodetectors are studied. Dark current to voltage and responsivity behavior of MSM devices are investigated as well. TFTs with the N 2 /H 2 PA-ALD based GaN channels are observed to have improved stability and transfer characteristics with respect to NH 3 PA-ALD based transistors. Dark current of the MSM photodetectors is suppressed strongly after high-temperature annealing in N 2 :H 2 ambient

  8. Microstructures and phase formations in the surface layer of an AISI D2 steel treated with pulsed electron beam

    International Nuclear Information System (INIS)

    Zou, J.X.; Grosdidier, T.; Zhang, K.M.; Gao, B.; Hao, S.Z.; Dong, C.

    2007-01-01

    The nanostructures and metastable phase transformations in the surface layer of an AISI D2 steel treated with high current pulsed electron beam (HCPEB) were investigated. The surface structure is marked by two distinct features, i.e. the formation of sub-micrometer fine austenite γ grains (50-150 nm), and the disappearance of carbides via dissolution and crater eruption. The γ phase directly grows from the melt and is retained down to room temperature. Although the cooling rate is as high as 10 7 K/s in our case, the martensitic transformation could completely be suppressed. Such an effect is due to the increased stability of the austenite phase through grain refinement and chemistry modification

  9. Solution processed deposition of electron transport layers on perovskite crystal surface—A modeling based study

    Energy Technology Data Exchange (ETDEWEB)

    Mortuza, S.M.; Taufique, M.F.N.; Banerjee, Soumik, E-mail: soumik.banerjee@wsu.edu

    2017-02-01

    Highlights: • The model determined the surface coverage of solution-processed film on perovskite. • Calculated surface density map provides insight into morphology of the monolayer. • Carbonyl oxygen atom of PCBM strongly attaches to the (110) surface of perovskite. • Uniform distribution of clusters on perovskite surface at lower PCBM concentration. • Deposition rate of PCBM on the surface is very high at initial stage of film growth. - Abstract: The power conversion efficiency (PCE) of planar perovskite solar cells (PSCs) has reached up to ∼20%. However, structural and chemicals defects that lead to hysteresis in the perovskite based thin film pose challenges. Recent work has shown that thin films of [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) deposited on the photo absorption layer, using solution processing techniques, minimize surface pin holes and defects thereby increasing the PCE. We developed and employed a multiscale model based on molecular dynamics (MD) and kinetic Monte Carlo (kMC) to establish a relationship between deposition rate and surface coverage on perovskite surface. The MD simulations of PCBMs dispersed in chlorobenzene, sandwiched between (110) perovskite substrates, indicate that PCBMs are deposited through anchoring of the oxygen atom of carbonyl group to the exposed lead (Pb) atom of (110) perovskite surface. Based on rates of distinct deposition events calculated from MD, kMC simulations were run to determine surface coverage at much larger time and length scales than accessible by MD alone. Based on the model, a generic relationship is established between deposition rate of PCBMs and surface coverage on perovskite crystal. The study also provides detailed insights into the morphology of the deposited film.

  10. Solution processed deposition of electron transport layers on perovskite crystal surface—A modeling based study

    International Nuclear Information System (INIS)

    Mortuza, S.M.; Taufique, M.F.N.; Banerjee, Soumik

    2017-01-01

    Highlights: • The model determined the surface coverage of solution-processed film on perovskite. • Calculated surface density map provides insight into morphology of the monolayer. • Carbonyl oxygen atom of PCBM strongly attaches to the (110) surface of perovskite. • Uniform distribution of clusters on perovskite surface at lower PCBM concentration. • Deposition rate of PCBM on the surface is very high at initial stage of film growth. - Abstract: The power conversion efficiency (PCE) of planar perovskite solar cells (PSCs) has reached up to ∼20%. However, structural and chemicals defects that lead to hysteresis in the perovskite based thin film pose challenges. Recent work has shown that thin films of [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) deposited on the photo absorption layer, using solution processing techniques, minimize surface pin holes and defects thereby increasing the PCE. We developed and employed a multiscale model based on molecular dynamics (MD) and kinetic Monte Carlo (kMC) to establish a relationship between deposition rate and surface coverage on perovskite surface. The MD simulations of PCBMs dispersed in chlorobenzene, sandwiched between (110) perovskite substrates, indicate that PCBMs are deposited through anchoring of the oxygen atom of carbonyl group to the exposed lead (Pb) atom of (110) perovskite surface. Based on rates of distinct deposition events calculated from MD, kMC simulations were run to determine surface coverage at much larger time and length scales than accessible by MD alone. Based on the model, a generic relationship is established between deposition rate of PCBMs and surface coverage on perovskite crystal. The study also provides detailed insights into the morphology of the deposited film.

  11. Charge-collection efficiency of GaAs field effect transistors fabricated with a low temperature grown buffer layer: dependence on charge deposition profile

    International Nuclear Information System (INIS)

    McMorrow, D.; Knudson, A.R.; Melinger, J.S.; Buchner, S.

    1999-01-01

    The results presented here reveal a surprising dependence of the charge-collection efficiency of LT GaAs FETs (field effect transistors) on the depth profile of the deposited charge. Investigation of the temporal dependence of the signal amplitude, carrier density contours, and potential contours reveals different mechanisms for charge collection arising from carriers deposited above and below the LT GaAs buffer layer, respectively. In particular, carriers deposited below the LT GaAs buffer layer dissipate slowly and give rise to a persistent charge collection that is associated with a bipolar-like gain process. These results may be of significance in understanding the occurrence of single-event upsets from protons, neutrons, and large-angle, glancing heavy-ion strikes. (authors)

  12. Study of SiNx:Hy passivant layers for AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Redondo-Cubero, A.; Gago, R.; Romero, M.F.; Gonzalez-Posada, F.; Brana, A.F.; Munoz, E.; Jimenez, A.

    2008-01-01

    In this work, hydrogenated silicon nitride (SiN x :H y ) grown by chemical vapour deposition as passivant layers for high electron mobility transistors (HEMT) have been studied. The film composition and bonding structure were determined by ion beam analysis and X-ray absorption spectroscopy techniques, respectively. The effects of gas precursors (SiH 4 /N 2 and SiH 4 /NH 3 ) and film/substrate interface on the film growth have been addressed. The growth on different substrates (Si, GaN, AlGaN), and the effects of plasma pre-treatments have been studied before the growth and the film growth evolution. Results yield no significant differences in all the analysed samples. This points out the relevant role of SiHn radicals as growth precursor species and that intrinsic characteristics of the SiNx:Hy layers are not affected by the film/substrate interface. Hence, improved performance of HEMT with surface plasma pre-treatments before passivation should be related to extrinsic mechanisms (such as creation of defects in AlGaN surface, removal of the surface contamination or ion-induced roughness). (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Application of NiMoNb adhesion layer on plasma-treated polyimide substrate for flexible electronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Bang, S.-H.; Kim, K.-K.; Jung, H.-Y.; Kim, T.-H.; Jeon, S.-H. [Metal and Material Technology Group, R and D Center, LS Mtron Ltd., Gyeonggi 431-080 (Korea, Republic of); Seol, Jae-Bok, E-mail: zptkfm20@hanmail.net [Max-Planck-Insititut für Eisenforschung, Max-Planck-Str. 1, D-40237 Düsseldorf (Germany)

    2014-05-02

    A thin film, NiMoNb, was introduced as an adhesion layer between the Cu metal and the insulator polyimide substrate in a flexible Cu-clad laminated structure. Using 90° peel test, we evaluated the peel strength of the system as a function of the thickness of the adhesion layer. An increase in the NiMoNb thickness from 7 to 40 nm enhanced the peel strength of the deposited systems. After plasma treatment by the roll-to-roll method, the multilayer structure showed an outstanding peel strength of ∼ 529 N/m, even after thermal annealing at 150 °C for 168 h. We also studied the role of plasma treatment of the polyimide substrate on the adhesion strength and microstructure of a flexible Cu-clad laminated structure by peel strength, atomic force microscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy. These experimental observations showed that the plasma-treated polyimide substrate with the deposition of NiMoNb showed the enhanced adhesion of ∼ 656 N/m, because of the change of functional groups, which affected the bonding force and crystallinity of the thin films deposited on polyimide, rather than an increase in the surface roughness. - Highlights: • NiMoNb film on polyimide substrate was employed for higher peel strength. • Plasma-treated substrate enhances the peel strength of multilayer. • Even when annealed at 150 °C, plasma-treated films showed enhanced peel strength.

  14. Transmission electron microscopy studies of HfO{sub 2} thin films grown by chloride-based atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Mitchell, D.R.G. [Institute of Materials and Engineering Science, ANSTO, PMB 1, Menai, NSW 2234 (Australia)]. E-mail: drm@ansto.gov.au; Aidla, A. [Institute of Physics, University of Tartu, Taehe 4, EE-51010 Tartu (Estonia); Aarik, J. [Institute of Physics, University of Tartu, Taehe 4, EE-51010 Tartu (Estonia)

    2006-11-15

    Detailed transmission electron microscopy characterization of HfO{sub 2} films deposited on Si(1 0 0) using atomic layer deposition has been carried out. The influence of deposition temperature has been investigated. At 226 deg. C, a predominantly quasi-amorphous film containing large grains of cubic HfO{sub 2} (a {sub 0} = 5.08 A) was formed. Grain morphology enabled the nucleation sites to be determined. Hot stage microscopy showed that both the cubic phase and the quasi-amorphous phase were very resistant to thermal modification up to 500 deg. C. These observations suggest that nucleation sites for the growth of the crystalline cubic phase form at the growing surface of the film, rather homogeneously within the film. The films grown at higher temperatures (300-750 deg. C) are crystalline and monoclinic. The principal effects of deposition temperature were on: grain size, which coarsens at the highest temperature; roughness with increases at the higher temperatures due to the prismatic faceting, and texture, with texturing being strongest at intermediate temperatures. Detailed interfacial characterization shows that interfacial layers of SiO{sub 2} form at low and high temperatures. However, at intermediate temperatures, interfaces devoid of SiO{sub 2} were formed.

  15. Application of NiMoNb adhesion layer on plasma-treated polyimide substrate for flexible electronic devices

    International Nuclear Information System (INIS)

    Bang, S.-H.; Kim, K.-K.; Jung, H.-Y.; Kim, T.-H.; Jeon, S.-H.; Seol, Jae-Bok

    2014-01-01

    A thin film, NiMoNb, was introduced as an adhesion layer between the Cu metal and the insulator polyimide substrate in a flexible Cu-clad laminated structure. Using 90° peel test, we evaluated the peel strength of the system as a function of the thickness of the adhesion layer. An increase in the NiMoNb thickness from 7 to 40 nm enhanced the peel strength of the deposited systems. After plasma treatment by the roll-to-roll method, the multilayer structure showed an outstanding peel strength of ∼ 529 N/m, even after thermal annealing at 150 °C for 168 h. We also studied the role of plasma treatment of the polyimide substrate on the adhesion strength and microstructure of a flexible Cu-clad laminated structure by peel strength, atomic force microscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy. These experimental observations showed that the plasma-treated polyimide substrate with the deposition of NiMoNb showed the enhanced adhesion of ∼ 656 N/m, because of the change of functional groups, which affected the bonding force and crystallinity of the thin films deposited on polyimide, rather than an increase in the surface roughness. - Highlights: • NiMoNb film on polyimide substrate was employed for higher peel strength. • Plasma-treated substrate enhances the peel strength of multilayer. • Even when annealed at 150 °C, plasma-treated films showed enhanced peel strength

  16. Adsorption and photocatalytic activity of electron-irradiated polystyrene nanosphere multi-layer film

    International Nuclear Information System (INIS)

    Cho, Sung Oh; Yoo, Seung Hwa; Kim, Jea Joon; Kum, Jong Min

    2012-01-01

    production from water, after the first report of poly(p-phenylene) (PPP) in 1990. Both of these work shows enhanced activity by incorporating a co-catalyst. However, to date, there is no reported literature about single material organic photocatalyst for removal of organic pollutant from water. In this paper, we present a novel low-cost, metal-free organic photocatalyst that consists of only carbon and hydrogen fabricated by electron-beam irradiation on polymer nanospheres. Characterization results and adsorption-photocatalytic activities are shown of electron-irradiated polystyrene (PS) nanospheres

  17. Rapid plasma heating by collective interactions, using strong turbulence and relativistic electron beams

    International Nuclear Information System (INIS)

    Wharton, C.B.

    1977-01-01

    A multi-kilovolt, moderate density plasma was generated in a magnetic mirror confinement system by two methods: turbulent heating and relativistic electron beam. Extensive diagnostic development permitted the measurement of important plasma characteristics, leading to interesting and novel conclusions regarding heating and loss mechanisms. Electron and ion heating mechanisms were categorized, and parameter studies made to establish ranges of importance. Nonthermal ion and electron energy distributions were measured. Beam propagation and energy deposition studies yielded the spatial dependence of plasma heating

  18. Simulation of 10 A electron beam formation and collection for a high current EBIS

    International Nuclear Information System (INIS)

    Kponou, A.; Beebe, E.; Pikin, A.; Kuznetsov, G.; Batazova, M.; Tiunov, M.

    1997-01-01

    Development of an Electron Beam Ion Source (EBIS) for the Relativistic Heavy Ion Collider (RHIC) at BNL requires operating with a 10 A electron beam, which is approximately an order of magnitude higher current than in any existing EBIS device. A test stand is presently being designed and constructed where EBIS components will be twisted. It will be reported in a separate paper at this Conference. The design of the 10 A electron gun, drift tubes and electron collector requires extensive computer simulations. Calculations have been performed at Novosibirsk and BNL using two different programs, SAM and EGUN. Results of these simulations will be presented

  19. In-situ potential mapping of space charge layer in GaN nanowires under electrical field by off-axis electron holography

    Directory of Open Access Journals (Sweden)

    Xiao Chen

    2016-04-01

    Full Text Available In situ potential mapping of space charge (SC layer in a single GaN nanowire (NW contacted to the Au metal electrode has been conducted using off-axis electron holography in order to study the space distribution of SC layer under electric biases. Based on the phase image reconstructed from the complex hologram the electrostatic potential at the SC layer was clearly revealed; the SC width was estimated to be about 76 nm under zero bias condition. In order to study dynamic interrelation between the SC layer and bias conditions, the variation of the electrostatic potential due to change of the SC widths respond to the different bias conditions have also been examined. The measured SC layers are found to vary between 68 nm and 91 nm, which correspond to the saturated SC layers at the GaN-Au contact under the forward and reverse bias conditions, respectively. By plotting the square widths of the SC layer against the applied voltages, donor density of GaN NWs was derived to be about 4.3*106 cm−3. Our experiments demonstrate that in-situ electron holography under electric field can be a useful method to investigate SC layers and donor density in single NW and other heterostructures.

  20. Electronic, structural, and substrate effect properties of single-layer covalent organic frameworks

    International Nuclear Information System (INIS)

    Liang, Liangbo; Zhu, Pan; Meunier, Vincent

    2015-01-01

    Recently synthesized two-dimensional covalent organic frameworks (COFs) exhibit high surface area, large pore size, and unique structural architectures, making them promising materials for various energy applications. Here, a total of nine COFs structures, including two deposited on a hexagonal boron nitride substrate, are investigated using density functional theory, quasi-particle many-body theory within the GW approximation, and an image charge model. The structures considered belong to two major families (thiophene-based COF-n (T-COF-n) and tetrakis (4-aminophenyl) porphyrin-x (TAPP-x)) differing from the presence of B—O or C=N linkers. While T-COF-n structures are shown to constitute planar networks, TAPP-x systems can display non-negligible corrugation due to the out-of-plane rotation of phenyl rings. We find that the electronic properties do not differ significantly when altering the chain molecules within each family. Many-body effects are shown to lead to large band-gap increase while the presence of the substrate yields appreciable reductions of the gaps, due to substrate polarization effects

  1. Disassembly and physical separation of electric/electronic components layered in printed circuit boards (PCB).

    Science.gov (United States)

    Lee, Jaeryeong; Kim, Youngjin; Lee, Jae-chun

    2012-11-30

    Although printed circuit boards (PCBs) contain various elements, only the major elements (i.e., those with content levels in wt% or over grade) of and precious metals (e.g., Ag, Au, and platinum groups) contained within PCBs can be recycled. To recover other elements from PCBs, the PCBs should be properly disassembled as the first step of the recycling process. The recovery of these other elements would be beneficial for efforts to conserve scarce resources, reuse electric/electronic components (EECs), and eliminate environmental problems. This paper examines the disassembly of EECs from wasted PCBs (WPCBs) and the physical separation of these EECs using a self-designed disassembling apparatus and a 3-step separation process of sieving, magnetic separation, and dense medium separation. The disassembling efficiencies were evaluated by using the ratio of grinding area (E(area)) and the weight ratio of the detached EECs (E(weight)). In the disassembly treatment, these efficiencies were improved with an increase of grinder speed and grinder height. 97.7% (E(area)) and 98% (E(weight)) could be accomplished ultimately by 3 repetitive treatments at a grinder speed of 5500 rpm and a grinder height of 1.5mm. Through a series of physical separations, most groups of the EECs (except for the diode, transistor, and IC chip groups) could be sorted at a relatively high separation efficiency of about 75% or more. To evaluate the separation efficiency with regard to the elemental composition, the distribution ratio (R(dis)) and the concentration ratio (R(conc)) were used. 15 elements could be separated with the highest R(dis) and R(conc) in the same separated division. This result implies that the recyclability of the elements is highly feasible, even though the initial content in EECs is lower than several tens of mg/kg. Copyright © 2012 Elsevier B.V. All rights reserved.

  2. Effect of the energy of bombarding electrons on the conductivity of n-4H-SiC (CVD) epitaxial layers

    Energy Technology Data Exchange (ETDEWEB)

    Kozlovski, V. V., E-mail: kozlovski@physics.spbstu.ru [Peter the Great St. Petersburg State Polytechnic University (Russian Federation); Lebedev, A. A.; Strel’chuk, A. M.; Davidovskaya, K. S. [Ioffe Physical–Technical Institute (Russian Federation); Vasil’ev, A. E. [Peter the Great St. Petersburg State Polytechnic University (Russian Federation); Makarenko, L. F. [Belarusian State University (Belarus)

    2017-03-15

    The electrical characteristics of epitaxial layers of n-4H-SiC (CVD) irradiated with 0.9 and 3.5MeV electrons are studied. It is shown that the donor removal rate becomes nearly four times higher as the energy of impinging electrons increases by a factor of 4, although the formation cross section of primary radiation defects (Frenkel pairs in the carbon sublattice) responsible for conductivity compensation of the material is almost energy independent in this range. It is assumed that the reason for the observed differences is the influence exerted by primary knocked-out atoms. First, cascade processes start to manifest themselves with increasing energy of primary knocked-out atoms. Second, the average distance between genetically related Frenkel pairs grows, and, as a consequence, the fraction of defects that do not recombine under irradiation becomes larger. The recombination radius of Frenkel pairs in the carbon sublattice is estimated and the possible charge state of the recombining components is assessed.

  3. Atomic-Layer-Deposited SnO2 as Gate Electrode for Indium-Free Transparent Electronics

    KAUST Repository

    Alshammari, Fwzah Hamud

    2017-08-04

    Atomic-layer-deposited SnO2 is used as a gate electrode to replace indium tin oxide (ITO) in thin-film transistors and circuits for the first time. The SnO2 films deposited at 200 °C show low electrical resistivity of ≈3.1 × 10−3 Ω cm with ≈93% transparency in most of the visible range of the electromagnetic spectrum. Thin-film transistors fabricated with SnO2 gates show excellent transistor properties including saturation mobility of 15.3 cm2 V−1 s−1, a low subthreshold swing of ≈130 mV dec−1, a high on/off ratio of ≈109, and an excellent electrical stability under constant-voltage stressing conditions to the gate terminal. Moreover, the SnO2-gated thin-film transistors show excellent electrical characteristics when used in electronic circuits such as negative channel metal oxide semiconductor (NMOS) inverters and ring oscillators. The NMOS inverters exhibit a low propagation stage delay of ≈150 ns with high DC voltage gain of ≈382. A high oscillation frequency of ≈303 kHz is obtained from the output sinusoidal signal of the 11-stage NMOS inverter-based ring oscillators. These results show that SnO2 can effectively replace ITO in transparent electronics and sensor applications.

  4. Multilayered phosphorescent polymer light-emitting diodes using a solution-processed n-doped electron transport layer

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Yuehua; Zhang, Mengke [Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023 (China); Zhang, Xinwen, E-mail: iamxwzhang@njupt.edu.cn [Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023 (China); Lei, Zhenfeng; Zhang, Xiaolin; Hao, Lin; Fan, Quli [Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023 (China); Lai, Wenyong, E-mail: iamwylai@njupt.edu.cn [Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023 (China); Huang, Wei [Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023 (China); Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing 211816 (China)

    2017-06-15

    Efficient multilayered green phosphorescent polymer light-emitting devices (PhPLEDs) were successfully fabricated using a solution-processed n-doped small molecular electron transporting layer (ETL) composed of 1,3,5-tris(N-phenyl-benzimidazol-2-yl)-benzene (TPBi) and CsF. We found that the electroluminescence properties of the devices with n-doped ETLs are significantly improved. The maximum luminance efficiency of the device with 7.5 wt% CsF doped TPBi ETL reached 26.9 cd/A, which is 1.5 times as large as that of the undoped device. The impedance spectra of the devices and electron transport properties of the CsF doped ETLs demonstrate that doping dramatically decreases the impedance and enhances the electrical conductivity. Similarly, enhanced performance of PhPLED is also observed by use of CsF-doped 4,7-diphenyl-1,10 -phenanthroline (BPhen) ETL. These results demonstrate that CsF can be used as an effective n-dopant in solution-processed devices.

  5. Multilayered phosphorescent polymer light-emitting diodes using a solution-processed n-doped electron transport layer

    International Nuclear Information System (INIS)

    Chen, Yuehua; Zhang, Mengke; Zhang, Xinwen; Lei, Zhenfeng; Zhang, Xiaolin; Hao, Lin; Fan, Quli; Lai, Wenyong; Huang, Wei

    2017-01-01

    Efficient multilayered green phosphorescent polymer light-emitting devices (PhPLEDs) were successfully fabricated using a solution-processed n-doped small molecular electron transporting layer (ETL) composed of 1,3,5-tris(N-phenyl-benzimidazol-2-yl)-benzene (TPBi) and CsF. We found that the electroluminescence properties of the devices with n-doped ETLs are significantly improved. The maximum luminance efficiency of the device with 7.5 wt% CsF doped TPBi ETL reached 26.9 cd/A, which is 1.5 times as large as that of the undoped device. The impedance spectra of the devices and electron transport properties of the CsF doped ETLs demonstrate that doping dramatically decreases the impedance and enhances the electrical conductivity. Similarly, enhanced performance of PhPLED is also observed by use of CsF-doped 4,7-diphenyl-1,10 -phenanthroline (BPhen) ETL. These results demonstrate that CsF can be used as an effective n-dopant in solution-processed devices.

  6. 77 FR 12367 - Agency Information Collection and Reporting Activities; Electronic Filing of Bank Secrecy Act...

    Science.gov (United States)

    2012-02-29

    ... capability of electronically filing BSA reports through its system called BSA E-Filing. Effective August 2011... Accounts (FBAR) report. BSA E-Filing is a secure, web-based electronic filing system. It is a flexible... filing institutions or individuals, thereby providing a significant improvement in data quality. BSA E...

  7. 78 FR 17646 - Agency Information Collection Activities; eZ-Audit: Electronic Submission of Financial Statements...

    Science.gov (United States)

    2013-03-22

    ...Z-Audit: Electronic Submission of Financial Statements and Compliance Audits AGENCY: Federal Student...: Electronic Submission of Financial Statements and Compliance Audits. OMB Control Number: 1845-0072. Type of... to facilitate the submission of compliance and financial statement audits, expedite the review of...

  8. Developing Humanities Collections in the Digital Age: Exploring Humanities Faculty Engagement with Electronic and Print Resources

    Science.gov (United States)

    Kachaluba, Sarah Buck; Brady, Jessica Evans; Critten, Jessica

    2014-01-01

    This article is based on quantitative and qualitative research examining humanities scholars' understandings of the advantages and disadvantages of print versus electronic information resources. It explores how humanities' faculty members at Florida State University (FSU) use print and electronic resources, as well as how they perceive these…

  9. SU-G-BRA-06: Quantification of Tracking Performance of a Multi-Layer Electronic Portal Imaging Device

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Y; Rottmann, J; Myronakis, M; Berbeco, R [Department of Radiation Oncology, Brigham and Women’s Hospital, Dana-Farber Cancer Institute and Harvard Medical School, Boston, MA (United States)

    2016-06-15

    Purpose: The purpose of this study was to quantify the improvement in tumor tracking, with and without fiducial markers, afforded by employing a multi-layer (MLI) electronic portal imaging device (EPID) over the current state-of-the-art, single-layer, digital megavolt imager (DMI) architecture. Methods: An ideal observer signal-to-noise ratio (d’) approach was used to quantify the ability of an MLI EPID and a current, state-of-the-art DMI EPID to track lung tumors from the treatment beam’s-eye-view. Using each detector modulation transfer function (MTF) and noise power spectrum (NPS) as inputs, a detection task was employed with object functions describing simple three-dimensional Cartesian shapes (spheres and cylinders). Marker-less tumor tracking algorithms often use texture discrimination to differentiate benign and malignant tissue. The performance of such algorithms is simulated by employing a discrimination task for the ideal observer, which measures the ability of a system to differentiate two image quantities. These were defined as the measured textures for benign and malignant lung tissue. Results: The NNPS of the MLI ∼25% of that of the DMI at the expense of decreased MTF at intermediate frequencies (0.25≤layers. This implies that further improvements in tracking may be gained through increasing the thickness of each MLI layer. For tracking, the MLI performance is limited by noise response. Losses in MTF result in negligible differences in d

  10. Collective acceleration of protons by the plasma waves in a counterstreaming electron beam

    International Nuclear Information System (INIS)

    Yan, Y.T.

    1987-03-01

    A novel advanced accelerator is proposed. The counterstreaming electron beam accelerator relies on the same physical mechanism as that of the plasma accelerator but replaces the stationary plasma in the plasma accelerator by a magnetized relativistic electron beam, drifting antiparallel to the driving source and the driven particles, as the wave supporting medium. The plasma wave in a counterstreaming electron beam can be excited either by a density-ramped driving electron beam or by properly beating two laser beams. The fundamental advantages of the counterstreaming electron beam accelerator over the plasma accelerator are a longer and tunable plasma wavelength, a longer pump depletion length or a larger transformer ratio, and easier pulse shaping for the driving source and the driven beam. Thus the energy gain of the driven particles can be greatly enhanced whereas the trapping threshold can be dramatically reduced so as to admit the possibility for proton acceleration

  11. Fullerene-Based Electron Transport Layers for Semi-Transparent MAPbBr3 Perovskite Films in Planar Perovskite Solar Cells

    Directory of Open Access Journals (Sweden)

    Lung-Chien Chen

    2016-10-01

    Full Text Available In this study, four kinds of structures—[6,6]-phenyl-C61-butyric acid methyl ester (PCBM, PCBM/fullerene (C60, C60/bathocuproine (BCP, and PCBM/C60/BCP—were used as electron transport layers, and the structure, and optical and electronic behaviors of MAPbBr3 perovskite layers after annealing treatments were observed. The experimental results indicate that PCBM/C60 bi-layer structure is acceptable for MAPbBr3 planar perovskite solar cells due to electron step transporting. Low-temperature annealing is suitable for smooth and large grain MAPbBr3 films. The semi-transparent yellow C60/PCBM/MAPbBr3/PEDOT:PSS/ITO glass-structure solar cells exhibit the best performance with a power conversion efficiency of 4.19%. The solar cells are revealed to be suitable for application in building integrated photovoltaic (BIPV systems.

  12. On the influence of electron heat transport on generation of the third harmonic of laser radiation in a dense plasma skin layer

    International Nuclear Information System (INIS)

    Isakov, Vladimir A; Kanavin, Andrey P; Uryupin, Sergey A

    2005-01-01

    The flux density is determined for radiation emitted by a plasma at the tripled frequency of an ultrashort laser pulse, which produces weak high-frequency modulations of the electron temperature in the plasma skin layer. It is shown that heat removal from the skin layer can reduce high-frequency temperature modulations and decrease the nonlinear plasma response. The optimum conditions for the third harmonic generation are found. (interaction of laser radiation with matter. laser plasma)

  13. Amorphous Tin Oxide as a Low-Temperature-Processed Electron-Transport Layer for Organic and Hybrid Perovskite Solar Cells

    KAUST Repository

    Barbe, Jeremy

    2017-02-08

    Chemical bath deposition (CBD) of tin oxide (SnO) thin films as an electron-transport layer (ETL) in a planar-heterojunction n-i-p organohalide lead perovskite and organic bulk-heterojunction (BHJ) solar cells is reported. The amorphous SnO (a-SnO) films are grown from a nontoxic aqueous bath of tin chloride at a very low temperature (55 °C) and do not require postannealing treatment to work very effectively as an ETL in a planar-heterojunction n-i-p organohalide lead perovskite or organic BHJ solar cells, in lieu of the commonly used ETL materials titanium oxide (TiO) and zinc oxide (ZnO), respectively. Ultraviolet photoelectron spectroscopy measurements on the glass/indium-tin oxide (ITO)/SnO/methylammonium lead iodide (MAPbI)/2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenylamine)-9,9′-spirobifluorene device stack indicate that extraction of photogenerated electrons is facilitated by a perfect alignment of the conduction bands at the SnO/MAPbI interface, while the deep valence band of SnO ensures strong hole-blocking properties. Despite exhibiting very low electron mobility, the excellent interfacial energetics combined with high transparency (E > 4 eV) and uniform substrate coverage make the a-SnO ETL prepared by CBD an excellent candidate for the potentially low-cost and large-scale fabrication of organohalide lead perovskite and organic photovoltaics.

  14. Triple layered core–shell structure with surface fluorinated ZnO-carbon nanotube composites and its electron emission properties

    International Nuclear Information System (INIS)

    Wang, H.Y.; Chua, Daniel H.C.

    2013-01-01

    Highlights: ► The effects of CF 4 plasma on ZnO-CNT core–shell structures were studied. ► ZnO was effective in protecting the aligned CNTs core for as long as 30 min of plasma etching. ► SEM showed the surface morphology was nearly similar between pristine, 2 min and 30 min plasma etched specimens. ► F was observed to displace O in ZnO. ► This is the first report of an ultra long plasma etch of fluorine onto ZnO surface. - Abstract: Core-shelled structures such as zinc oxide (ZnO) on carbon nanotubes (CNTs) give rise to interesting material properties. In this work, a triple-layered core–shell–shell structure is presented where the effects of fluorine (F) incorporation on the outmost shell of the ZnO-CNT structure are studied. The samples prepared ranged from a short 2 min to a 30 min immersion in carbon tetraflouride (CF 4 ) plasma. In addition, its effects on the electron emission properties also studied and it is shown that the plasma immersions create thinner field emitters with sharp tiny wrinkles giving rise to more electron emission sites and higher enhancement factor. In addition, X-ray photoelectron spectroscopy measurements showed that F ions replace O in ZnO coatings during immersion process, thus increasing the electrical conductivity and shifts the Fermi level of ZnO upwards. Both physical and electronic effects further contribute to a lower threshold field.

  15. Effect of cooler electrons on a compressive ion acoustic solitary wave in a warm ion plasma — Forbidden regions, double layers, and supersolitons

    International Nuclear Information System (INIS)

    Ghosh, S. S.; Sekar Iyengar, A. N.

    2014-01-01

    It is observed that the presence of a minority component of cooler electrons in a three component plasma plays a deterministic role in the evolution of solitary waves, double layers, or the newly discovered structures called supersolitons. The inclusion of the cooler component of electrons in a single electron plasma produces sharp increase in nonlinearity in spite of a decrease in the overall energy of the system. The effect maximizes at certain critical value of the number density of the cooler component (typically 15%–20%) giving rise to a hump in the amplitude variation profile. For larger amplitudes, the hump leads to a forbidden region in the ambient cooler electron concentration which dissociates the overall existence domain of solitary wave solutions in two distinct parameter regime. It is observed that an inclusion of the cooler component of electrons as low as < 1% affects the plasma system significantly resulting in compressive double layers. The solution is further affected by the cold to hot electron temperature ratio. In an adequately hotter bulk plasma (i.e., moderately low cold to hot electron temperature ratio), the parameter domain of compressive double layers is bounded by a sharp discontinuity in the corresponding amplitude variation profile which may lead to supersolitons

  16. Effect of cooler electrons on a compressive ion acoustic solitary wave in a warm ion plasma — Forbidden regions, double layers, and supersolitons

    Energy Technology Data Exchange (ETDEWEB)

    Ghosh, S. S., E-mail: sukti@iigs.iigm.res.in [Indian Institute of Geomagnetism, New Panvel, Navi Mumbai 410218 (India); Sekar Iyengar, A. N. [Plasma Physics Division, Saha Institute of Nuclear Physics, Kolkata 700064 (India)

    2014-08-15

    It is observed that the presence of a minority component of cooler electrons in a three component plasma plays a deterministic role in the evolution of solitary waves, double layers, or the newly discovered structures called supersolitons. The inclusion of the cooler component of electrons in a single electron plasma produces sharp increase in nonlinearity in spite of a decrease in the overall energy of the system. The effect maximizes at certain critical value of the number density of the cooler component (typically 15%–20%) giving rise to a hump in the amplitude variation profile. For larger amplitudes, the hump leads to a forbidden region in the ambient cooler electron concentration which dissociates the overall existence domain of solitary wave solutions in two distinct parameter regime. It is observed that an inclusion of the cooler component of electrons as low as < 1% affects the plasma system significantly resulting in compressive double layers. The solution is further affected by the cold to hot electron temperature ratio. In an adequately hotter bulk plasma (i.e., moderately low cold to hot electron temperature ratio), the parameter domain of compressive double layers is bounded by a sharp discontinuity in the corresponding amplitude variation profile which may lead to supersolitons.

  17. Benefits of Implementing and Improving Collection of Sexual Orientation and Gender Identity Data in Electronic Health Records.

    Science.gov (United States)

    Bosse, Jordon D; Leblanc, Raeann G; Jackman, Kasey; Bjarnadottir, Ragnhildur I

    2018-06-01

    Individuals in lesbian, gay, bisexual, and transgender communities experience several disparities in physical and mental health (eg, cardiovascular disease and depression), as well as difficulty accessing care that is compassionate and relevant to their unique needs. Access to care is compromised in part due to inadequate information systems that fail to capture identity data. Beginning in January 2018, meaningful use criteria dictate that electronic health records have the capability to collect data related to sexual orientation and gender identity of patients. Nurse informaticists play a vital role in the process of developing new electronic health records that are sensitive to the needs and identities of the lesbian, gay, bisexual, and transgender communities. Improved collection of sexual orientation and gender identity data will advance the identification of health disparities experienced by lesbian, gay, bisexual, and transgender populations. More inclusive electronic health records will allow providers to monitor risk behavior, assess progress toward the reduction of disparities, and provide healthcare that is patient and family centered. Concrete suggestions for the modification of electronic health record systems are presented, as well as how nurse informaticists may be able to bridge gaps in provider knowledge and discomfort through interprofessional collaboration when implementing changes in electronic health records.

  18. Collective excitations in semiconductor superlattices and plasma modes of a two-dimensional electron gas with spatially modulated charge density

    International Nuclear Information System (INIS)

    Eliasson, G.L.

    1987-01-01

    The theory of collective excitations in semiconductor superlattices is formulated by using linear response theory. Different kinds of collective excitations in type I (GaAs-GaAlAs) and type II (GaSb-InAs) superlattices are surveyed. Special attention is paid to the presence of surface and finite-size effects. In calculating the dielectric matrix, the effect of different approximations of the system is discussed. The theory for inelastic length scattering (Raman scattering), and for Electron Energy Loss (EEL) due to collective excitations, is formulated. Calculations for several model systems are presented and the main features of the spectra are discussed. In part II the theory of collective excitations of a two-dimensional electron gas with a spatially periodic equilibrium density is formulated. As a first example a periodic array of two-dimensional electron gas strips with constant equilibrium density is studied. The integral equation that describes the charge fluctuations on the strips is derived and solved numerically. The spatial dependence of the density fluctuation across a single strip can be in the form of either propagating or evanescent waves

  19. Large improvement of electron extraction from CdSe quantum dots into a TiO2 thin layer by N3 dye coabsorption

    International Nuclear Information System (INIS)

    Mora-Sero, Ivan; Dittrich, Thomas; Susha, Andrei S.; Rogach, Andrey L.; Bisquert, Juan

    2008-01-01

    Extraction of electrons and holes photogenerated in CdSe quantum dots (QD) of 2.3 nm diameter, is monitored by Surface Photovoltage Spectroscopy. The extraction of electrons into a thin TiO 2 layer increases five-fold by absorption of N3 dye molecules on top of the QD layer. This process is facilitated by efficient hole extraction from the valence band of the QDs to the ground state of the N3 dye. Our results represent a direct measurement of charge separation in the N3/QD/TiO 2 system

  20. Analysis of reaction between c+a and -c+a dislocations in GaN layer grown on 4-inch Si(111) substrate with AlGaN/AlN strained layer superlattice by transmission electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Sugawara, Yoshihiro; Ishikawa, Yukari, E-mail: yukari@jfcc.or.jp [Japan Fine Ceramics Center, Atsuta, Nagoya, 456-8587 (Japan); Watanabe, Arata [Research Center for Nano Devices and Advanced Materials, Nagoya Institute of Technology, Nagoya, 466-8555 (Japan); Miyoshi, Makoto; Egawa, Takashi [Research Center for Nano Devices and Advanced Materials, Nagoya Institute of Technology, Nagoya, 466-8555 (Japan); Innovation Center for Multi-Business of Nitride Semiconductors, Nagoya Institute of Technoloy, Nagoya, 466-8555 (Japan)

    2016-04-15

    The behavior of dislocations in a GaN layer grown on a 4-inch Si(111) substrate with an AlGaN/AlN strained layer superlattice using horizontal metal-organic chemical vapor deposition was observed by transmission electron microscopy. Cross-sectional observation indicated that a drastic decrease in the dislocation density occurred in the GaN layer. The reaction of a dislocation (b=1/3[-211-3]) and anothor dislocation (b =1/3[-2113]) to form one dislocation (b =2/3[-2110]) in the GaN layer was clarified by plan-view observation using weak-beam dark-field and large-angle convergent-beam diffraction methods.