Experiments on secondary ion emission with multicharged keV ion bombardement

International Nuclear Information System (INIS)

Della Negra, S.; Depauw, J.; Joret, H.; Le Beyec, Y.; Schweikert, E.A.

1987-01-01

An electron cyclotron resonance ion source was used to study the influence of the incident charge state of keV ions on secondary ion emission. The experiments were run with 18 keV Arn+ (1 < n < 11) beams produced by a minimafios source. Various types of targets were bombarded by the ion beam and the sputtered ionized species were identified by time of flight mass spectrometry. The experimental arrangement is detailed and preliminary results are indicated

Direct evidence for a thermal effect of Ar+ ion bombardment in a conventional sputtering mode

International Nuclear Information System (INIS)

Okuyama, F.; Fujimoto, Y.

1986-01-01

Evidence is presented that the Ar + ion bombardment for sputtering in Auger electron spectroscopy can heat the target up to 2000 0 C if the target has poor heat conduction. Polycrystalline microneedles of Cr exhibited spherical tips after being exposed to 3 keV Ar + ions, proving that the needle tips were melted by impacting Ar + ions. Microneedles of Mo ion bombarded under the same condition were bent plastically, which perhaps reflects the thermal annealing of the needles during ion bombardment

Preliminary report into the effects of nitrogen ion bombardment treatment on mustard seeds

International Nuclear Information System (INIS)

Smith, C.W.; Al-Hashmi, S.A.R.; Ahmed, N.A.G.; Pollard, M.

1988-01-01

Mustard seeds have been subjected to nitrogen ion bombardment. A range of conditions was found within which there was an enhancement in the growth of seedlings from the ion bombardment treated seeds relative to those grown from control seeds. Scanning electron microscopy was used to examine seeds after treatment. It appeared that there had been an etching of the seed coating by the ion bombardment. This view was supported by experiments which showed that the rate of capillary water uptake by the treated seeds had been enhanced. (author)

Origin of Si(LMM) Auger Electron Emission from Silicon and Si-Alloys by keV Ar+ Ion Bombardment

Science.gov (United States)

Iwami, Motohiro; Kim, Su Chol; Kataoka, Yoshihide; Imura, Takeshi; Hiraki, Akio; Fujimoto, Fuminori

1980-09-01

Si(LMM) Auger electrons emitted from specimens of pure silicon and several Si-alloys (Ni-Si, Pd-Si and Cu-Si) under keV Ar+ ion bombardment, were examined. In the Auger spectra from all specimens studied there were four peaks at energies of 92, 86, 76 and 66 eV. The Auger signal intensity varied considerably with both the incident angle and the energy of the primary ion beam. It is proposed that the Auger electrons are emitted from silicon atoms (or ions) just beneath the specimen surface but free from the bulk network.

Molecular projectile effects for kinetic electron emission from carbon- and metal-surfaces bombarded by slow hydrogen ions

International Nuclear Information System (INIS)

Cernusca, S.; Winter, H.P.; Aumayr, F.; Diez Muino, R.; Juaristi, J.I.

2003-01-01

Total yields for kinetic electron emission (KE) have been determined for impact of hydrogen monomer-, dimer- and trimer-ions (impact energy <10 keV) on atomically clean surfaces of carbon-fiber inforced graphite used as first-wall armour in magnetic fusion devices. The data are compared with KE yields for impact of same projectile ions on atomically clean highly oriented pyrolytic graphite and polycrystalline gold. We discuss KE yields for the different targets if bombarded by equally fast molecular and atomic ions in view to 'projectile molecular effects' (different yields per proton for equally fast atomic and molecular ions), which are expected from calculated electronic projectile energy losses in these target materials

Molecular projectile effects for kinetic electron emission from carbon- and metal-surfaces bombarded by slow hydrogen ions

CERN Document Server

Cernusca, S; Aumayr, F; Diez-Muino, R; Juaristi, J I

2003-01-01

Total yields for kinetic electron emission (KE) have been determined for impact of hydrogen monomer-, dimer- and trimer-ions (impact energy <10 keV) on atomically clean surfaces of carbon-fiber inforced graphite used as first-wall armour in magnetic fusion devices. The data are compared with KE yields for impact of same projectile ions on atomically clean highly oriented pyrolytic graphite and polycrystalline gold. We discuss KE yields for the different targets if bombarded by equally fast molecular and atomic ions in view to 'projectile molecular effects' (different yields per proton for equally fast atomic and molecular ions), which are expected from calculated electronic projectile energy losses in these target materials.

Study on evolution of gases from fluoropolymer films bombarded with heavy ions

International Nuclear Information System (INIS)

Minamisawa, Renato Amaral; Zimmerman, Robert Lee; Budak, Satilmis; Ila, Daryush

2008-01-01

Ion beam bombardment provides a unique way of material modification by inducing a high degree of localized electronic excitation. The ion track, or affected volume along the ion path through the material is related to the total damage and possible structural changes. Here we study the evolution of gases emitted by poly(tetrafluorethylene-co-perfluoro-(propyl vinyl ether)) (PFA) fluoropolymer bombarded with MeV gold ions. The gas was monitored by a residual gas analyzer (RGA), as a function of the ion fluence. Micro-Raman, atomic force microscopy and optical absorption were used to analyze the chemical structure changes and sputtering yield

Continuum radiation emitted from transition metals under ion bombardment

International Nuclear Information System (INIS)

El Boujlaidi, A.; Kaddouri, A.; Ait El Fqih, M.; Hammoum, K.; Aouchiche, H.

2012-01-01

Optical emission of transition metals has been studied during 5 keV Kr + ions bombardment within and without oxygen atmosphere in the colliding chamber. The observed spectra consist of a series of discrete lines superimposed on a broad continuum. Generally, the emission intensity was influenced by the presence of oxygen giving rise to transient effects as well as to an increase in the line intensity. The behaviours of spectral lines were successfully explained in term of electron-transfer process between the excited sputtered atom and the solid surface. In this work, we have focused our study on the continuous radiation emitted during ion bombardment. The experimental results suggest that the continuum emission depends on the nature of metal and very probably related to its electronic structure. The collective deactivation of 3d-shell electrons appears to play a role in the emission of this radiation. The observed enhancement in the presence of oxygen is probably due to a significant contribution of the oxide molecules. (authors)

Electron emission from molybdenum under ion bombardment

International Nuclear Information System (INIS)

Ferron, J.; Alonso, E.V.; Baragiola, R.A.; Oliva-Florio, A.

1981-01-01

Measurements are reported of electron emission yields of clean molybdenum surfaces under bombardment with H + , H 2 + , D + , D 2 + , He + , N + , N 2 + , O + , O 2 + , Ne + , Ar + , Kr + and Xe + in the wide energy range 0.7-60.2 keV. The clean surfaces were produced by inert gas sputtering under ultrahigh vacuum. The results are compared with those predicted by a core-level excitation model. The disagreement found when using correct values for the energy levels of Mo is traced to wrong assumptions in the model. A substantially improved agreement with experiment is obtained using a model in which electron emission results from the excitation of valence electrons from the target by the projectiles and fast recoiling target atoms. (author)

Changes of electronic properties of p-GaN(0 0 0 1) surface after low-energy N+-ion bombardment

Science.gov (United States)

Grodzicki, M.; Mazur, P.; Ciszewski, A.

2018-05-01

The p-GaN(0 0 0 1) crystal with a relatively low acceptor concentration of 5 × 1016 cm-3 is used in these studies, which are carried out in situ under ultrahigh vacuum (UHV) by ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS) and low-energy electron diffraction (LEED). The p-GaN(0 0 0 1)-(1 × 1) surface is achieved by thermal cleaning. N+-ion bombardment by a 200 eV ion beam changes the surface stoichiometry, enriches it with nitrogen, and disorders it. Such modified surface layer inverts its semiconducting character from p- into n-type. The electron affinity for the already cleaned p-GaN surface and that just after bombardment shows a shift from 2.2 eV to 3.2 eV, as well as an increase of band bending at the vacuum/surface interface from 1.4 eV to 2.5 eV. Proper post-bombardment heating of the sample restores the initial atomic order of the modified layer, leaving its n-type semiconducting character unchanged. The results of the measurements are discussed based on two types of surface states concepts.

The influence of ion bombardment on emission properties of carbon materials

International Nuclear Information System (INIS)

Chepusov, Alexander; Komarskiy, Alexander; Kuznetsov, Vadim

2014-01-01

When electric-vacuum device works its cathode surface experiences bombardment with ions of residual gases. Effects of ion bombardment impact on surface of field emission cathodes made of carbon materials may essentially change emission properties of such cathodes. It changes emission start electric field strength, voltage vs. current characteristic of material, its relief and electron structure of the surface layer. Field emission cathode operating mode, variation of radiation doses allow to obtain both good effects: maximal electric current, surface recovery – and negative ones: the worst emission properties and surface destruction, amorphization.

The influence of ion bombardment on emission properties of carbon materials

Energy Technology Data Exchange (ETDEWEB)

Chepusov, Alexander, E-mail: chepusov@iep.uran.ru [The Institute of Electrophysics of the Ural Division of the Russian Academy of Sciences (IEP UD RAS), 620016, 106 Amundsen Street, Ekaterinburg (Russian Federation); Ural Federal University, 620002, 19 Mira Street, Ekaterinburg (Russian Federation); Komarskiy, Alexander, E-mail: aakomarskiy@gmail.com [The Institute of Electrophysics of the Ural Division of the Russian Academy of Sciences (IEP UD RAS), 620016, 106 Amundsen Street, Ekaterinburg (Russian Federation); Ural Federal University, 620002, 19 Mira Street, Ekaterinburg (Russian Federation); Kuznetsov, Vadim, E-mail: kuznetsov@iep.uran.ru [The Institute of Electrophysics of the Ural Division of the Russian Academy of Sciences (IEP UD RAS), 620016, 106 Amundsen Street, Ekaterinburg (Russian Federation)

2014-07-01

When electric-vacuum device works its cathode surface experiences bombardment with ions of residual gases. Effects of ion bombardment impact on surface of field emission cathodes made of carbon materials may essentially change emission properties of such cathodes. It changes emission start electric field strength, voltage vs. current characteristic of material, its relief and electron structure of the surface layer. Field emission cathode operating mode, variation of radiation doses allow to obtain both good effects: maximal electric current, surface recovery – and negative ones: the worst emission properties and surface destruction, amorphization.

Study and realisation of an ion source obtained by electronic bombardment - experimentation with phosphorus

International Nuclear Information System (INIS)

Schneider, Philippe

1979-01-01

This research thesis reports the study and development of an ion source by electronic bombardment. In order to solve some practical difficulties (cathode destruction, source instability, and so on), the design of each component has been very careful, notably for the electron gun. The author first briefly discusses the exiting ionisation processes, gives a list of ion which can be produced, with a focus on phosphorus for which the ionisation cross section is defined and assessed. After an assessment of different ionisation processes, and an indication of performance of the best existing sources, the author explains the choice for a totally different process. In the second part, he describes the experimental device, and particularly the electron gun as its design has been an important part of this research work. The source operation is described and its characteristics and performance are studied. Finally, the author outlines that some improvements are still possible to obtain a totally exploitable source [fr

Modification of thin film properties by ion bombardment during deposition

International Nuclear Information System (INIS)

Harper, J.M.E.; Cuomo, J.J.; Gambino, R.J.; Kaufman, H.R.

1984-01-01

Many thin film deposition techniques involve some form of energetic particle bombardment of the growing film. The degree of bombardment greatly influences the film composition, structure and other properties. While in some techniques the degree of bombardment is secondary to the original process design, in recent years more deposition systems are being designed with the capability for controlled ion bombardment of thin films during deposition. The highest degree of control is obtained with ion beam sources which operate independently of the vapor source providing the thin film material. Other plasma techniques offer varying degrees of control of energetic particle bombardment. Deposition methods involving ion bombardment are described, and the basic processes with which film properties are modified by ion bombardment are summarized. (Auth.)

Ion plasma electron gun

International Nuclear Information System (INIS)

Wakalopulos, G.

1976-01-01

In the disclosed electron gun positive ions generated by a hollow cathode plasma discharge in a first chamber are accelerated through control and shield grids into a second chamber containing a high voltage cold cathode. These positive ions bombard a surface of the cathode causing the cathode to emit secondary electrons which form an electron beam having a distribution adjacent to the cathode emissive surface substantially the same as the distribution of the ion beam impinging upon the cathode. After passing through the grids and the plasma discharge chamber, the electron beam exits from the electron gun via a foil window. Control of the generated electron beam is achieved by applying a relatively low control voltage between the control grid and the electron gun housing (which resides at ground potential) to control the density of the positive ions bombarding the cathode

Origin of Si(LMM) Auger electron emission from silicon and Si-alloys by keV Ar/sup +/ ion bombardment

Energy Technology Data Exchange (ETDEWEB)

Iwami, M; Kim, S; Kataoka, Y; Imura, T; Hiraki, A [Osaka Univ., Suita (Japan). Faculty of Engineering

1980-09-01

Si(LMM) Auger electrons emitted from specimens of pure silicon and several Si-alloys (Ni-Si, Pd-Si and Cu-Si) under keV Ar/sup +/ ion bombardment, were examined. In the Auger spectra from all specimens studied there were four peaks at energies of 92, 86, 76 and 66 eV. The Auger signal intensity varied considerably with both the incident angle and the energy of the primary ion beam. It is proposed that the Auger electrons are emitted from silicon atoms (or ions) just beneath the specimen surface but free from the bulk network.

Impact of Ion Bombardment on the Structure and Magnetic Properties of Fe78Si13B9 Amorphous Alloy

Science.gov (United States)

Wu, Yingwei; Peng, Kun

2018-06-01

Amorphous Fe78Si13B9 alloy ribbons were bombarded by ion beams with different incident angles ( θ ). The evolution of the microstructure and magnetic properties of ribbons caused by ion beam bombardment was investigated by x-ray diffraction, transmission electron microscope and vibrating sample magnetometer analysis. Low-incident-angle bombardment led to atomic migration in the short range, and high-incident-angle bombardment resulted in the crystallization of amorphous alloys. Ion bombardment induces magnetic anisotropy and affects magnetic properties. The effective magnetic anisotropy was determined by applying the law of approach to saturation, and it increased with the increase of the ion bombardment angle. The introduction of effective magnetic anisotropy will reduce the permeability and increase the relaxation frequency. Excellent high-frequency magnetic properties can be obtained by selecting suitable ion bombardment parameters.

Structural and magnetic properties of ion-beam bombarded Co/Pt multilayers

Energy Technology Data Exchange (ETDEWEB)

Lin, K.W.; Guo, J.Y.; Lin, S.R.; Ouyang, H. [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402 (China); Tsai, C.J. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300 (China); Van Lierop, J. [Department of Physics and Astronomy, University of Manitoba, Winnipeg (Canada); Phuoc, N.N.; Suzuki, T. [Information Storage Materials Laboratory, Toyota Technological Institute, Nagoya 468-8511 (Japan)

2007-12-15

A series of [Pt(2 nm)/Co(2 nm)]{sub 10}/Pt(30 nm) multilayers were deposited by using an ion-beam technique. X-ray diffraction and transmission electron microscopy results have shown that as-deposited samples consist of h.c.p. Co and f.c.c. Pt phases. Disordered CoPt{sub 3} phases were developed with increasing End-Hall voltage (V{sub EH}) that induces greater ion-beam bombardment energy during deposition. This indicates that intermixing of Co and Pt increases with ion-beam bombardment. The coercivities (ranging from 100 Oe to 300 Oe) of Co/Pt multilayers decreased with increasing V{sub EH}. After annealing, the formation of CoPt{sub 3} was observed in these ion-beam bombarded samples, resulting in lower coercivities (H{sub c}{proportional_to} 50 Oe). The depressed transition temperature of CoPt{sub 3} for films deposited with the largest V{sub EH} was attributed to distorted CoPt{sub 3} structures that appeared with annealing. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

The surface topography of Inconel, stainless steel and copper after argon ion bombardment

International Nuclear Information System (INIS)

Vogelbruch, K.; Vietzke, E.

1983-01-01

Energetic particle bombardment of metals is known to change the surface topography. To simulate the behaviour of the first wall of a fusion device under real plasma conditions, we have investigated the surface topography of rotating targets after 30 keV argon ion bombardment at 70deg incident angle by electron scanning micrographs. Under these conditions Inconel 600, 601, 625, stainless steel, and copper showed no cones, pyramids or cliffs, but only etching figures and at higher ion doses relatively flat hills. Thus, it can be concluded, that the influence of energetic particles on the first wall of a fusion reactor is smaller than expected from the results of such sputtering experiments, which have dealt with the formation of surface structures under ion bombardment at constant incident direction. (author)

Effect of ion beam bombardment on the carbide in M2 steel modified by ion-beam-assisted deposition

Energy Technology Data Exchange (ETDEWEB)

Li, X.Y.; Wang, F.J.; Wang, Y.K. (Dept. of Materials Engineering, Dalian Univ. of Technology (China)); Ma, T.C. (National Lab. of Materials Modification by Beam Three, Dalian (China))

1991-10-30

Transmission electron microscopy was used to study the effect of nitrogen ion bombardment with different doses on the carbides in M2 high speed steel as the nitrogen ions penetrated into the nitride films during ion-beam-assisted deposition. With different doses of nitrogen, alterations in the morphological characteristics of the carbide M6C at the interface were observed. With lower doses, knitting-like contrast within the carbide showed subboundary structure defects in M6C. With increasing dose, the substructure defects were broken up into small fragments owing to heavy bombardment. The microstructures of carbides at the interface damaged by nitrogen ions are discussed in detail. (orig.).

Cleaning of diffusion bonding surface by argon ion bombardment treatment

International Nuclear Information System (INIS)

Wang, Airu; Ohashi, Osamu; Yamaguchi, Norio; Aoki, Masanori; Higashi, Yasuo; Hitomi, Nobuteru

2003-01-01

The specimens of oxygen-free high conductivity copper, SUS304L stainless steel and pure iron were treated by argon ion bombardment and then were bonded by diffusion bonding method. The effects of argon ion bombardment treatment on faying surface morphology, tensile strength of bonding joints and inclusions at the fracture surface were investigated. The results showed that argon ion bombardment treatment was effective to remove the oxide film and contamination at the faying surface and improve the quality of joints. The tensile strength of the bonded joints was improved, and minimum bonding temperature to make the metallic bonding at the interface was lowered by argon ion bombardment treatment. At the joints with argon ion bombardment treatment, ductile fractured surface was seen and the amount of inclusions was obviously decreased

Erosion of volatile elemental condensed gases by keV electron and light-ion bombardment

International Nuclear Information System (INIS)

Schou, J.

1991-11-01

Erosion of the most volatile elemental gases by keV electron and light-ion bombardment has been studied at the experimental setup at Risoe. The present work includes frozen neon, argon, krypton, nitrogen, oxygen and three hydrogen isotopes, deuterium, hydrogen deuteride and hydrogen. The yield of these condensed gases has been measured as a function of film thickness and primary energy for almost all combinations of primary particles (1-3 keV electrons, 5-10 keV hydrogen- and helium ions) and ices. These and other existing results show that there are substantial common features for the sputtering of frozen elemental gases. Within the two groups, the solid rare gases and the solid molecular gases, the similarity is striking. The hydrogenic solids deviate in some respects from the other elements. The processes that liberate kinetic energy for the particle ejection in sputtering are characteristic of the specific gas. (au) 3 tabs., 12 ills., 159 refs

Modification of thin film properties by ion bombardment during deposition

International Nuclear Information System (INIS)

Harper, J.M.E.; Cuomo, J.J.; Gambino, R.J.; Kaufman, H.R.

1984-01-01

Deposition methods involving ion bombardment are described, and the basic processes with which film properties are modified by ion bombardment are summarized. Examples of thin film property modification by ion bombardment during deposition, including effects which are primarily compositional as well as those which are primarily structural are presented. The examples demonstrate the usefulness of ion beam techniques in identifying and controlling the fundamental deposition parameters. 68 refs.; 15 figs.; 1 table

Ion bombardment modification of surfaces

International Nuclear Information System (INIS)

Auciello, O.

1984-01-01

Ion bombardment-induced modification of surfaces may be considered one of the significant scientific and technological developments of the last two decades. The understanding acquired concerning the underlying mechanisms of several phenomena occurring during ion-surface interactions has led to applications within different modern technologies. These include microelectronics, surface acoustical and optical technologies, solar energy conversion, thin film technology, ion implantation metallurgy, nuclear track technology, thermonuclear fusion, vacuum technology, cold welding technology, biomedicine (implantology). It has become clear that information on many relevant advances, regarding ion bombardment modification of surfaces is dispersed among journals involving fields sometimes not clearly related. This may result, in some cases, in a loss of the type of interdisciplinary exchange of ideas, which has proved to be so fruitful for the advancement of science and technology. This book has been planned in an attempt to collect at least some of today's relevant information about the experimental and theoretical knowledge related to surface modification and its application to technology. (Auth.)

Characterization techniques for ion bombarded insulators

International Nuclear Information System (INIS)

Borders, J.A.

1987-01-01

The chapter gives a comprehensive review of the experimental methods for the analysis of ion-bombarded insulators including optical and structural methods, resonance, energetic ion methods, and surface techniques. 48 refs.; 34 figs

Low-energy ion beam bombardment effect on the plant-cell-envelope mimetic membrane for DNA transfer

International Nuclear Information System (INIS)

Prakrajang, K.; Sangwijit, K.; Anuntalabhochai, S.; Wanichapichart, P.; Yu, L.D.

2012-01-01

This study is a systematic analysis of the mechanisms involved in ion-beam induced DNA transfer, an important application of ion beam biotechnology. Cellulose membranes were used to mimic the plant cell envelope. Ion beams of argon (Ar) or nitrogen (N) at an energy of 25 keV bombarded the cellulose membranes at fluences ranging from 10 15 to 10 16 ions/cm 2 . The damage to the ion-beam-bombarded membranes was characterized using infrared spectroscopy, a micro tensile test and scanning electron microscopy (SEM). Chain scission was the dominant radiation damage type in the membrane. DNA diffusion across the membrane was significantly increased after ion beam bombardment. The increase in DNA transfer is therefore attributed to chain scission, which increases the permeability by increasing the number of pores in the membrane.

An ion beam deceleration lens for ultra-low-energy ion bombardment of naked DNA

Energy Technology Data Exchange (ETDEWEB)

Thopan, P.; Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongkumkoon, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Suwannakachorn, D. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuldyuld@gmail.com [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2013-07-15

Highlights: ► An ion beam deceleration lens was designed and constructed. ► The deceleration lens was installed and tested. ► The decelerated ion beam energy was measured using an electrical field. ► Decelerated ultra-low-energy ion beam bombarded naked DNA. ► Ion beam with energy of a few tens of eV could break DNA strands. -- Abstract: Study of low-energy ion bombardment effect on biological living materials is of significance. High-energy ion beam irradiation of biological materials such as organs and cells has no doubt biological effects. However, ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range. To investigate effects from very-low-energy ion bombardment on biological materials, an ion beam deceleration lens is necessary for uniform ion energy lower than keV. A deceleration lens was designed and constructed based on study of the beam optics using the SIMION program. The lens consisted of six electrodes, able to focus and decelerate primary ion beam, with the last one being a long tube to obtain a parallel uniform exiting beam. The deceleration lens was installed to our 30-kV bioengineering-specialized ion beam line. The final decelerated-ion energy was measured using a simple electrostatic field to bend the beam to range from 10 eV to 1 keV controlled by the lens parameters and the primary beam condition. In a preliminary test, nitrogen ion beam at 60 eV decelerated from a primary 20-keV beam bombarded naked plasmid DNA. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks. The study demonstrated that the ion bombardment with energy as low as several-tens eV was possible to break DNA strands and thus potential to cause genetic modification of biological cells.

An ion beam deceleration lens for ultra-low-energy ion bombardment of naked DNA

International Nuclear Information System (INIS)

Thopan, P.; Prakrajang, K.; Thongkumkoon, P.; Suwannakachorn, D.; Yu, L.D.

2013-01-01

Highlights: ► An ion beam deceleration lens was designed and constructed. ► The deceleration lens was installed and tested. ► The decelerated ion beam energy was measured using an electrical field. ► Decelerated ultra-low-energy ion beam bombarded naked DNA. ► Ion beam with energy of a few tens of eV could break DNA strands. -- Abstract: Study of low-energy ion bombardment effect on biological living materials is of significance. High-energy ion beam irradiation of biological materials such as organs and cells has no doubt biological effects. However, ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range. To investigate effects from very-low-energy ion bombardment on biological materials, an ion beam deceleration lens is necessary for uniform ion energy lower than keV. A deceleration lens was designed and constructed based on study of the beam optics using the SIMION program. The lens consisted of six electrodes, able to focus and decelerate primary ion beam, with the last one being a long tube to obtain a parallel uniform exiting beam. The deceleration lens was installed to our 30-kV bioengineering-specialized ion beam line. The final decelerated-ion energy was measured using a simple electrostatic field to bend the beam to range from 10 eV to 1 keV controlled by the lens parameters and the primary beam condition. In a preliminary test, nitrogen ion beam at 60 eV decelerated from a primary 20-keV beam bombarded naked plasmid DNA. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks. The study demonstrated that the ion bombardment with energy as low as several-tens eV was possible to break DNA strands and thus potential to cause genetic modification of biological cells

Calculations on displacement damage and its related parameters for heavy ion bombardment in reactor materials

International Nuclear Information System (INIS)

Sone, Kazuho; Shiraishi, Kensuke

1975-04-01

The depth distribution of displacement damage expressed in displacements per atom (DPA) in reactor materials such as Mo, Nb, V, Fe and Ni bombarded by energetic nitrogen, argon and self ions with incident energy below 2 MeV was calculated following the theory developed by Lindhard and co-workers for the partition of energy as an energetic ion slowing down. In this calculation, energy loss due to electron excitation was taken into account for the atomic collision cascade after the primary knock-on process. Some parameters indispensable for the calculation such as energy loss rate, damage efficiency, projected range and its straggling were tabulated as a function of incident ion energy of 20 keV to 2 MeV. The damage and parameters were also calculated for 2 MeV nickel ions bombarding Fe targets. In this case, the DPA value is of 40--75% overestimated in a calculation disregarding electronic energy loss for primary knock-on atoms. The formula proposed in this report is significant for calculations on displacement damage produced by heavy ion bombardment as a simulation of high fluence fast neutron damage. (auth.)

Calculations on displacement damage and its related parameters for heavy ion bombardment in reactor materials

Energy Technology Data Exchange (ETDEWEB)

Sone, K; Shiraishi, K

1975-04-01

The depth distribution of displacement damage expressed in displacements per atom (DPA) in reactor materials such as Mo, Nb, V, Fe and Ni bombarded by energetic nitrogen, argon and self ions with incident energy below 2 MeV was calculated following the theory developed by Lindhard and co-workers for the partition of energy as an energetic ion slowing down. In this calculation, energy loss due to electron excitation was taken into account for the atomic collision cascade after the primary knock-on process. Some parameters indispensable for the calculation such as energy loss rate, damage efficiency, projected range and its straggling were tabulated as a function of incident ion energy of 20 keV to 2 MeV. The damage and parameters were also calculated for 2 MeV nickel ions bombarding Fe targets. In this case, the DPA value is of 40--75% overestimated in a calculation disregarding electronic energy loss for primary knock-on atoms. The formula proposed in this report is significant for calculations on displacement damage produced by heavy ion bombardment as a simulation of high fluence fast neutron damage.

Low-energy ion beam bombardment effect on the plant-cell-envelope mimetic membrane for DNA transfer

Energy Technology Data Exchange (ETDEWEB)

Prakrajang, K., E-mail: k.prakrajang@gmail.com [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Sangwijit, K.; Anuntalabhochai, S. [Molecular Biology Laboratory, Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Wanichapichart, P. [Membrane Science and Technology Research Center, Department of Physics, Faculty of Science, Prince of Songkla University, Hat Yai, Songkla 90112 (Thailand); Yu, L.D., E-mail: yuld@fnrf.science.cmu.ac.th [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2012-09-01

This study is a systematic analysis of the mechanisms involved in ion-beam induced DNA transfer, an important application of ion beam biotechnology. Cellulose membranes were used to mimic the plant cell envelope. Ion beams of argon (Ar) or nitrogen (N) at an energy of 25 keV bombarded the cellulose membranes at fluences ranging from 10{sup 15} to 10{sup 16} ions/cm{sup 2}. The damage to the ion-beam-bombarded membranes was characterized using infrared spectroscopy, a micro tensile test and scanning electron microscopy (SEM). Chain scission was the dominant radiation damage type in the membrane. DNA diffusion across the membrane was significantly increased after ion beam bombardment. The increase in DNA transfer is therefore attributed to chain scission, which increases the permeability by increasing the number of pores in the membrane.

Effects of uranium bombardment by 20-40 KeV argon ions, Annex 2

International Nuclear Information System (INIS)

Nenadovic, T.; Jurela, Z.

1966-01-01

This paper shows the results of argon ions interaction with the polycrystal natural uranium. Thin foil of uranium about 200 μ was bombarded by 20-40 KeV argon ions. Coefficients of cathode scattering δ and secondary electrons emission γ were measured, during the process A + →U. The foil was then studied by transmission method and method of single step replica using an electron microscope [sr

Peculiarities of phase transformations in molybdenum-silicon system under ion bombardment

International Nuclear Information System (INIS)

Gurskij, L.I.; Zelenin, V.A.; Bobchenok, Yu.L.

1984-01-01

The problems of effect of ion bombardment and thermal treatment on the mechanisms of formation of transition layers and structural transformations in the molybdenum-silicon system, where the interface is subjected to ion bombardment through a film of molybdenum, are considered. The method of electron diffraction analysis has been applied to establish that at the molybdenum-silicon interface a transitional region appears during irradiation which has a semiamorphous structure at the doses up to 8x10 14 ion/cm 2 , while at higher doses it transforms into polycrystalline intermediate layer which consists of MoB and the compound close in composition to MoSisub(0.65). Due to thermal treatment for 60873 K a large-grain phase (Mo 3 Si+MoSi 2 ) appears in the transition layer below which a large-grain silicon layer is placed

Catalytic oxidation of silicon by cesium ion bombardment

International Nuclear Information System (INIS)

Souzis, A.E.; Huang, H.; Carr, W.E.; Seidl, M.

1991-01-01

Results for room-temperature oxidation of silicon using cesium ion bombardment and low oxygen exposure are presented. Bombardment with cesium ions is shown to allow oxidation at O 2 pressures orders of magnitude smaller than with noble gas ion bombardment. Oxide layers of up to 30 A in thickness are grown with beam energies ranging from 20--2000 eV, O 2 pressures from 10 -9 to 10 -6 Torr, and total O 2 exposures of 10 0 to 10 4 L. Results are shown to be consistent with models indicating that initial oxidation of silicon is via dissociative chemisorption of O 2 , and that the low work function of the cesium- and oxygen-coated silicon plays the primary role in promoting the oxidation process

Composition and structure of ion-bombardment-induced growth cones on InP

International Nuclear Information System (INIS)

Malherbe, J.B.; Lakner, H.; Gries, W.H.

1991-01-01

The previously reported effect of low-energy (several keV) ion bombardment on the surface topography of InP was investigated by scanning transmission electron microscopy. Convergent beam electron diffraction patterns of the surface growth 'cones' induced by argon ion bombardment of (100) InP between 7 and 10 keV proved the cones to consist of crystalline InP (and not metallic indium, as has sometimes been claimed). The investigation showed that the irradiated surface region is not rendered completely amorphous but that it recrystallizes from the crystalline/amorphous interface in a columnar growth pattern, often terminating in growth cones protruding above the surface. Weak beam investigations revealed that the overwhelming majority of the cones have the orientation of the substrate. These phenomena were observed at all dose densities from 7 x 10 15 to 2 x 10 17 cm -2 . (author)

Effects produced in GaAs by MeV ion bombardment

International Nuclear Information System (INIS)

Wie, C.R.

1985-01-01

The first part of this thesis presents work performed on the ionizing energy beam induced adhesion enhancement of thin (approx.500 A) Au films on GaAs substrates. The ionizing beam, employed in the present thesis, is the MeV ions (i.e., 16 O, 19 F, and 35 Cl), with energies between 1 and 20 MeV. Using the Scratch test for adhesion measurement, and ESCA for chemical analysis of the film substrate interface, the native oxide layer at the interface is shown to play an important role in the adhesion enhancement by the ionizing radiation. A model is discussed that explains the experimental data on the dependence of adhesion enhancement on the energy which was deposited into electronic processes at the interface. The second part of the thesis presents research results on the radiation damage in GaAs crystals produced by MeV ions. Lattice parameter dilatation in the surface layers of the GaAs crystals becomes saturated after a high dose bombardment at room temperature. The strain produced by nuclear collisions is shown to relax partially due to electronic excitation (with a functional dependence on the nuclear and electronic stopping power of bombarding ions. Data on the GaAs and GaP crystals suggest that low temperature recovery stage defects produce major crystal distortion

Modification of Polymer Materials by Ion Bombardment: Case Studies

International Nuclear Information System (INIS)

Bielinski, D. M.; Jagielski, J.; Lipinski, P.; Pieczynska, D.; Ostaszewska, U.; Piatkowska, A.

2009-01-01

The paper discusses possibility of application of ion beam bombardment for modification of polymers. Changes to composition, structure and morphology of the surface layer produced by the treatment and their influence on engineering and functional properties of wide range of polymer materials are presented. Special attention has been devoted to modification of tribological properties. Ion bombardment results in significant reduction of friction, which can be explained by increase of hardness and wettability of polymer materials. Hard but thin enough skin does not result in cracking but improves their abrasion resistance. Contrary to conventional chemical treatment ion beam bombardment works even for polymers hardly susceptible to modification like silicone rubber or polyolefines.

Friction and wear measurements of sputtered MoS/sub x/ films amorphized by ion bombardment

International Nuclear Information System (INIS)

Mikkelsen, N.J.; Chevallier, J.; Soerensen, G.; Straede, C.A.

1988-01-01

The present study presents an experimental evidence for amorphization of rf sputtered MoS/sub x/ films by ion bombardment. Even at low doses (3 x 10 15 ions/cm 2 ) of 400 keV argon ions a complete amorphization was confirmed by x-ray diffraction analysis and transmission electron microscopy. As a result of the ion bombardment the film density increased 100% to almost the bulk value for MoS 2 . The friction coefficient for ion beam amorphized MoS/sub x/ was measured to be 0.04 in agreement with the values reported for crystalline films but disagreeing considerably with the friction coefficient of 0.4 previously reported for amorphous films

Ultra-low-energy (<10 eV/u) ion beam bombardment effect on naked DNA

Energy Technology Data Exchange (ETDEWEB)

Thopan, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongkumkoon, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Faculty of Science, Maejo University, Chiang Mai 50290 (Thailand); Suwannakachorn, D. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuld@thep-center.org [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2014-05-01

Highlights: • Decelerated ultra-low energy ion beam bombarded naked DNA. • DNA form change induced by ion bombardment was investigated. • N-ion bombardment at 32 eV induced DNA single and double strand breaks. • Ar-ion bombardment at a-few-hundreds eV induced DNA single strand break. - Abstract: Since ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range, it is very interesting to know effects from ultra-low-energy ion interaction with DNA for understanding ion-beam-induced genetic mutation. Tens-keV Ar- and N-ion beams were decelerated to ultra-low energy ranging from 20 to 100 eV, or only a few to 10 eV/u, to bombard naked plasmid DNA. The bombarded DNA was analyzed using gel electrophoresis for DNA form changes. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks after bombarded by tens-eV ion beam. N-ion beam was found more effective in inducing DNA change and mutation than Ar-ion beam. The study demonstrated that the ion bombardment with energy as low as several-tens eV was able to break DNA strands and thus potentially to cause genetic modification of biological cells. The experimental results were discussed in terms of direct atomic collision between the ions and DNA atoms.

Ultra-low-energy (<10 eV/u) ion beam bombardment effect on naked DNA

International Nuclear Information System (INIS)

Thopan, P.; Thongkumkoon, P.; Prakrajang, K.; Suwannakachorn, D.; Yu, L.D.

2014-01-01

Highlights: • Decelerated ultra-low energy ion beam bombarded naked DNA. • DNA form change induced by ion bombardment was investigated. • N-ion bombardment at 32 eV induced DNA single and double strand breaks. • Ar-ion bombardment at a-few-hundreds eV induced DNA single strand break. - Abstract: Since ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range, it is very interesting to know effects from ultra-low-energy ion interaction with DNA for understanding ion-beam-induced genetic mutation. Tens-keV Ar- and N-ion beams were decelerated to ultra-low energy ranging from 20 to 100 eV, or only a few to 10 eV/u, to bombard naked plasmid DNA. The bombarded DNA was analyzed using gel electrophoresis for DNA form changes. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks after bombarded by tens-eV ion beam. N-ion beam was found more effective in inducing DNA change and mutation than Ar-ion beam. The study demonstrated that the ion bombardment with energy as low as several-tens eV was able to break DNA strands and thus potentially to cause genetic modification of biological cells. The experimental results were discussed in terms of direct atomic collision between the ions and DNA atoms

Investigation of the surface morphology of ion-bombarded biocompatible materials with a SEM and profilograph

International Nuclear Information System (INIS)

Kowalski, Z.W.

1984-01-01

The surface morphology (topography and roughness) is a very important factor which affects the response of biological tissue to an implant material. The effect of an incident ion beam on surface morphology of various biocompatible materials was studied. All materials were bombarded by Ar + ions at an applied voltage of 7 kV at various incident angles from 0 to 1.4 rad (0 to 80 deg) and at a beam current up to 0.1 mA. The surface topographies of ion-bombarded samples were examined with a Japan Electron Optics Laboratory, model JSM-35, scanning electron microscope. The roughness of the surface was calculated from the shape of a surface profile, which was recorded by a profilograph, the ME 10 (supplied by VEB Carl Zeiss, Jena). (author)

Very low-energy and low-fluence ion beam bombardment of naked plasmid DNA

International Nuclear Information System (INIS)

Norarat, R.; Semsang, N.; Anuntalabhochai, S.; Yu, L.D.

2009-01-01

Ion beam bombardment of biological organisms has been recently applied to mutation breeding of both agricultural and horticultural plants. In order to explore relevant mechanisms, this study employed low-energy ion beams to bombard naked plasmid DNA. The study aimed at simulation of the final stage of the process of the ion beam bombardment of real cells to check whether and how very low-energy and low-fluence of ions can induce mutation. Argon and nitrogen ions at 5 keV and 2.5 keV respectively bombarded naked plasmid DNA pGFP to very low-fluences, an order of 10 13 ions/cm 2 . Subsequently, DNA states were analyzed using electrophoresis. Results provided evidences that the very low-energy and low-fluence ion bombardment indeed altered the DNA structure from supercoil to short linear fragments through multiple double strand breaks and thus induced mutation, which was confirmed by transfer of the bombarded DNA into bacteria Escherichia coli and subsequent expression of the marker gene.

Ion bombardment induced surface topography modification of clean and contaminated single crystal Cu and Si

International Nuclear Information System (INIS)

Lewis, G.W.; Kiriakides, G.; Carter, G.; Nobes, M.J.

1982-01-01

Among the several factors which lead to depth resolution deterioration during sputter profiling, surface morphological modification resulting from local differences of sputtering rate can be important. This paper reports the results of direct scanning, electron microscopic studies obtained quasi-dynamically during increasing fluence ion bombardment of the evolution of etch pit structures on Si and Cu, and how such elaboration may be suppressed. It also reports on the elaboration of contaminant-induced cone generation for different ion species bombardment. The influence of such etch pit and cone generation on achievable depth resolution is assessed. (author)

Induction of antioxidant enzyme activity and lipid peroxidation level in ion-beam-bombarded rice seeds

Energy Technology Data Exchange (ETDEWEB)

Semsang, Nuananong, E-mail: nsemsang@gmail.com [Molecular Biology Laboratory, Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, LiangDeng [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2013-07-15

Highlights: ► Ion beam bombarded rice seeds in vacuum. ► Studied seed survival from the ion bombardment. ► Determined various antioxidant enzyme activities and lipid peroxidation level. ► Discussed vacuum, ion species and ion energy effects. ► Attributed the changes to free radical formation due to ion bombardment. -- Abstract: Low-energy ion beam bombardment has been used to mutate a wide variety of plant species. To explore the indirect effects of low-energy ion beam on biological damage due to the free radical production in plant cells, the increase in antioxidant enzyme activities and lipid peroxidation level was investigated in ion-bombarded rice seeds. Local rice seeds were bombarded with nitrogen or argon ion beams at energies of 29–60 keV and ion fluences of 1 × 10{sup 16} ions cm{sup −2}. The activities of the antioxidant enzymes; superoxide dismutase (SOD), catalase (CAT), ascorbate peroxidase (APX), dehydroascorbate reductase (DHAR), glutathione reductase (GR), glutathione S-transferase (GST) and lipid peroxidation level were assayed in the germinated rice seeds after ion bombardment. The results showed most of the enzyme activities and lipid peroxidation levels in both the argon and nitrogen bombarded samples were higher than those in the natural control. N-ion bombardment could induce higher levels of antioxidant enzyme activities in the rice samples than the Ar-ion bombardment. Additional effects due to the vacuum condition were found to affect activities of some antioxidant enzymes and lipid peroxidation level. This study demonstrates that ion beam bombardment and vacuum condition could induce the antioxidant enzyme activity and lipid peroxidation level which might be due to free radical production in the bombarded rice seeds.

Ion bombardment and disorder in amorphous silicon

International Nuclear Information System (INIS)

Sidhu, L.S.; Gaspari, F.; Zukotynski, S.

1997-01-01

The effect of ion bombardment during growth on the structural and optical properties of amorphous silicon are presented. Two series of films were deposited under electrically grounded and positively biased substrate conditions. The biased samples displayed lower growth rates and increased hydrogen content relative to grounded counterparts. The film structure was examined using Raman spectroscopy. The transverse optic like phonon band position was used as a parameter to characterize network order. Biased samples displayed an increased order of the amorphous network relative to grounded samples. Furthermore, biased samples exhibited a larger optical gap. These results are correlated and attributed to reduced ion bombardment effects

Annealing of defects in indium antimonide after ion bombardment

International Nuclear Information System (INIS)

Bogatyrev, V.A.; Kachurin, G.A.

1977-01-01

Indium antimonide electric properties are investigated after ion bombardment of different mass (with energy of 60 and 300 keV) and isochrone annealing in the 20-450 deg C temperature range. It is shown that 100-150 deg C n- type stable layers are formed after proton irradiation at room temperature only. Indium antimonide exposure by average mass ions under the same conditions and also by helium ions of 300 keV energy brings to p-type layer formation with high hole concentration. Subsequent heating at the temperature over 150 deg C results in electron conductivity of irradiated layers. Electron volume density and mobility efficiency reaches 10 18 cm -3 and 10 4 cm 2 /Vs respectively. N-type formed layers are stable up to 350 deg C allowing its usage for n-p transition formation admitting thermal treatment. Analysis is given of defect behaviour peculiarities depending upon the irradiation and annealing conditions. Hole conductivity in irradiated indium antimonide is supposed to be stipulated by regions of disorder, while electron conductivity - by relatively simpler disorders

Induction of antioxidant enzyme activity and lipid peroxidation level in ion-beam-bombarded rice seeds

Science.gov (United States)

Semsang, Nuananong; Yu, LiangDeng

2013-07-01

Low-energy ion beam bombardment has been used to mutate a wide variety of plant species. To explore the indirect effects of low-energy ion beam on biological damage due to the free radical production in plant cells, the increase in antioxidant enzyme activities and lipid peroxidation level was investigated in ion-bombarded rice seeds. Local rice seeds were bombarded with nitrogen or argon ion beams at energies of 29-60 keV and ion fluences of 1 × 1016 ions cm-2. The activities of the antioxidant enzymes; superoxide dismutase (SOD), catalase (CAT), ascorbate peroxidase (APX), dehydroascorbate reductase (DHAR), glutathione reductase (GR), glutathione S-transferase (GST) and lipid peroxidation level were assayed in the germinated rice seeds after ion bombardment. The results showed most of the enzyme activities and lipid peroxidation levels in both the argon and nitrogen bombarded samples were higher than those in the natural control. N-ion bombardment could induce higher levels of antioxidant enzyme activities in the rice samples than the Ar-ion bombardment. Additional effects due to the vacuum condition were found to affect activities of some antioxidant enzymes and lipid peroxidation level. This study demonstrates that ion beam bombardment and vacuum condition could induce the antioxidant enzyme activity and lipid peroxidation level which might be due to free radical production in the bombarded rice seeds.

Mechanisms of ion-bombardment-induced DNA transfer into bacterial E. coli cells

Energy Technology Data Exchange (ETDEWEB)

Yu, L.D., E-mail: yuld@thep-center.org [Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Sangwijit, K. [Molecular Biology Laboratory, Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Faculty of Science, Maejo University, Chiang Mai 50290 (Thailand); Phanchaisri, B. [Institute of Science and Technology Research, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongkumkoon, P. [Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thopan, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Singkarat, S. [Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Anuntalabhochai, S. [Molecular Biology Laboratory, Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)

2014-05-01

Highlights: • Ion bombardment could induce DNA transfer into E. coli cells. • The DNA transfer induction depended on ion energy and fluence. • The mechanism was associated with the bacterial cell envelope structure. • A mechanism phase diagram was proposed to summarize the mechanism. - Abstract: As a useful ion beam biotechnology, ion-bombardment-induced DNA transfer into bacterial Escherichia coli (E. coli) cells has been successfully operated using argon ions. In the process ion bombardment of the bacterial cells modifies the cell envelope materials to favor the exogenous DNA molecules to pass through the envelope to enter the cell. The occurrence of the DNA transfer induction was found ion energy and fluence dependent in a complex manner. At ion energy of a few keV and a few tens of keV to moderate fluences the DNA transfer could be induced by ion bombardment of the bacterial cells, while at the same ion energy but to high fluences DNA transfer could not be induced. On the other hand, when the ion energy was medium, about 10–20 keV, the DNA transfer could not be induced by ion bombardment of the cells. The complexity of the experimental results indicated a complex mechanism which should be related to the complex structure of the bacterial E. coli cell envelope. A phase diagram was proposed to interpret different mechanisms involved as functions of the ion energy and fluence.

Mechanisms of ion-bombardment-induced DNA transfer into bacterial E. coli cells

International Nuclear Information System (INIS)

Yu, L.D.; Sangwijit, K.; Prakrajang, K.; Phanchaisri, B.; Thongkumkoon, P.; Thopan, P.; Singkarat, S.; Anuntalabhochai, S.

2014-01-01

Highlights: • Ion bombardment could induce DNA transfer into E. coli cells. • The DNA transfer induction depended on ion energy and fluence. • The mechanism was associated with the bacterial cell envelope structure. • A mechanism phase diagram was proposed to summarize the mechanism. - Abstract: As a useful ion beam biotechnology, ion-bombardment-induced DNA transfer into bacterial Escherichia coli (E. coli) cells has been successfully operated using argon ions. In the process ion bombardment of the bacterial cells modifies the cell envelope materials to favor the exogenous DNA molecules to pass through the envelope to enter the cell. The occurrence of the DNA transfer induction was found ion energy and fluence dependent in a complex manner. At ion energy of a few keV and a few tens of keV to moderate fluences the DNA transfer could be induced by ion bombardment of the bacterial cells, while at the same ion energy but to high fluences DNA transfer could not be induced. On the other hand, when the ion energy was medium, about 10–20 keV, the DNA transfer could not be induced by ion bombardment of the cells. The complexity of the experimental results indicated a complex mechanism which should be related to the complex structure of the bacterial E. coli cell envelope. A phase diagram was proposed to interpret different mechanisms involved as functions of the ion energy and fluence

Considerations about projectile and target X-rays induced during heavy ion bombardment

Science.gov (United States)

Fernandes, F.; Bauer, D. V.; Duarte, A.; Ferrari, T. M.; Niekraszewicz, L. A. B.; Amaral, L.; Dias, J. F.

2018-02-01

In this work we present some results concerning the X-rays emitted by heavy ions during target bombardment. In this case, Cl4+ and Cl5+ ions with energies from 4 MeV to 10 MeV were employed to irradiate vitreous carbon planchets. Moreover, total X-ray production cross sections of titanium X-rays induced by chlorine ions were obtained as well for the same energy range. Only inner shell transitions were considered in the present work. The titanium target consisted of a thin film deposited over vitreous carbon planchets. The results indicate that the projectile X-ray yields increase as a function of the bombarding energy for the present energy range. Effects due to projectile charge state appears to be of minor importance at these low ion velocities. It is shown that a simple exponential function can represent the continuum background of such complex spectra. The chlorine transition rates Kβ/Kα obtained from chlorine acting as a projectile interacting with a carbon target are about half the value when compared to the chlorine Kβ/Kα ratios obtained when a LiCl target is bombarded with C+ and C3+ ions with energies from 2 MeV to 6 MeV. As far as the total X-ray production cross sections of Ti induced by chlorine ions are concerned, the ECPSSR theory underestimates the Ti total X-rays production cross sections by several orders of magnitude. The role of electron capture and possible mechanisms responsible for these effects are discussed.

Magnetoresistance and ion bombardment induced magnetic patterning

International Nuclear Information System (INIS)

Hoeink, V.

2008-01-01

In this thesis the combination of the magnetic patterning of the unidirectional anisotropy and the tunnel magnetoresistance effect is investigated. In my diploma thesis, it has been shown that it is in principle possible to use the magnetic patterning by ion bombardment to magnetically structure the pinned layer in magnetic tunnel junctions (MTJs) with alumina barrier. Furthermore, it has been shown that the side effects which have been observed after this treatment can be at least reduced by an additional heating step. Starting from this point, the applicability of ion bombardment induced magnetic patterning (IBMP) in general and the combination of IBMP and MTJs in particular is investigated and new applications are developed. (orig.)

Influence of the ion bombardment of O{sub 2} plasmas on low-k materials

Energy Technology Data Exchange (ETDEWEB)

Verdonck, Patrick, E-mail: verdonck@imec.be [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Samara, Vladimir [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Open University, Materials Engineering, Walton Hall, Milton Keynes MK7 6AA (United Kingdom); Goodyear, Alec [Open University, Materials Engineering, Walton Hall, Milton Keynes MK7 6AA (United Kingdom); Ferchichi, Abdelkarim; Van Besien, Els; Baklanov, Mikhail R. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Braithwaite, Nicholas [Open University, Department of Physics and Astronomy, Walton Hall, Milton Keynes MK7 6AA (United Kingdom)

2011-10-31

In this study, special tests were devised in order to investigate the influence of ion bombardment on the damage induced in low-k dielectrics by oxygen plasmas. By placing a sample that suffered a lot of ion bombardment and one which suffered little ion bombardment simultaneously in the same plasma, it was possible to verify that ion bombardment in fact helped to protect the low-k film against oxygen plasma induced damage. Exhaustive analyses (ellipsometry, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, porosimetry, capacitance-voltage (C-V) measurements, water contact angle analysis) show that ion bombardment induced the formation of a denser top layer in the film, which then hampered further penetration of active oxygen species deeper into the bulk. This was further confirmed by other tests combining capacitively and inductively coupled plasmas. Therefore, it was possible to conclude that, at least for these plasmas, ion bombardment may help to reduce plasma induced damage to low-k materials.

Studies on the bombardment of condensed molecular gases at liquid-He temperatures by keV electrons and light ions

International Nuclear Information System (INIS)

Boergesen, P.

1982-09-01

Films of solid H 2 , D 2 and N 2 were irradiated with keV electrons and ions. Stopping cross sections and ranges of 0.3-10 keV/amu light ions in solid H 2 and D 2 are in good agreement with experimental and theoretical data on gaseous targets. In contrast, both stopping cross section and range measurements in solid N 2 suggest that the stopping here is only about half of that in N 2 -gas. This ''phase-effect'' is further supported by secondary emission measurements. Secondary electron emission coefficients for 2-10 keV H 1 + , H 2 + , H 3 + , D 3 + , D 2 H + , 4 He + , 14 N + and 20 Ne + incident on solids H 2 , D 2 and N 2 are in reasonable agreement with previous results for electron-incidence. The rather large erosion yields for 1-3 keV electrons incident on solid D 2 depend strongly on target thickness (for thin films), but weakly on energy. Bulk yields for 2 keV electrons were approximately 8 H 2 /electron, approximately 4 D 2 /electron and approximately 0.5 N 2 /electron. Secondary ion emission during ion bombardment seems to be predominantly reflected projectiles in the case of N 2 -targets, while it may be explained as sputtered particles from H 2 - and D 2 -targets. Preliminary results on the erosion of solid H 2 and D 2 by keV light ions indicate very large erosion yields (approx. 400 H 2 /atom for 2 keV protons) increasing strongly with energy. (Auth.)

The effect of incidence angle on ion bombardment induced surface topography development on single crystal copper

International Nuclear Information System (INIS)

Carter, G.; Nobes, M.J.; Lewis, G.W.; Whitton, J.L.

1982-01-01

The fluence dependence of development of microscopic surface features, particularly etch pits, during 9 keV Ar + ion bombardment of (11,3,1) oriented Cu single crystals has been studied employing quasi-dynamic irradiation and observation techniques in a scanning electron microscope-accelerator system. 9 keV ions are observed not to produce crystallographic pyramids under all irradiation conditions for this surface, a very different result from our earlier studies with higher energy ions. The bombardment does elaborate etch pits however, the habits and growth kinetics of which depend upon both polar and azimuthal angles of ion incidence to the surface. The results are explained in terms of differential erosion of crystal planes modified by the presence of pre-existing and irradiation induces extended defects. (orig.)

Evolution of atomic-scale surface structures during ion bombardment: A fractal simulation

International Nuclear Information System (INIS)

Shaheen, M.A.; Ruzic, D.N.

1993-01-01

Surfaces of interest in microelectronics have been shown to exhibit fractal topographies on the atomic scale. A model utilizing self-similar fractals to simulate surface roughness has been added to the ion bombardment code TRIM. The model has successfully predicted experimental sputtering yields of low energy (less then 1000 eV) Ar on Si and D on C using experimentally determined fractal dimensions. Under ion bombardment the fractal surface structures evolve as the atoms in the collision cascade are displaced or sputtered. These atoms have been tracked and the evolution of the surface in steps of one monolayer of flux has been determined. The Ar--Si system has been studied for incidence energies of 100 and 500 eV, and incidence angles of 0 degree, 30 degree, and 60 degree. As expected, normally incident ion bombardment tends to reduce the roughness of the surface, whereas large angle ion bombardment increases the degree of surface roughness. Of particular interest though, the surfaces are still locally self-similar fractals after ion bombardment and a steady state fractal dimension is reached, except at large angles of incidence

Secondary electron ion source neutron generator

Science.gov (United States)

Brainard, John P.; McCollister, Daryl R.

1998-01-01

A neutron generator employing an electron emitter, an ion source bombarded by the electrons from the electron emitter, a plasma containment zone, and a target situated between the plasma containment zone and the electron emitter. The target contains occluded deuterium, tritium, or a mixture thereof

Computer simulation of the topography evolution on ion bombarded surfaces

CERN Document Server

Zier, M

2003-01-01

The development of roughness on ion bombarded surfaces (facets, ripples) on single crystalline and amorphous homogeneous solids plays an important role for example in depth profiling techniques. To verify a faceting mechanism based not only on sputtering by directly impinging ions but also on the contribution of reflected ions and the redeposition of sputtered material a computer simulation has been carried out. The surface in this model is treated as a two-dimensional line segment profile. The model describes the topography evolution on ion bombarded surfaces including the growth mechanism of a facetted surface, using only the interplay of reflected and primary ions and redeposited atoms.

Ion bombardment induced ripple topography on amorphous solids

International Nuclear Information System (INIS)

Carter, G.; Nobes, M.J.; Paton, F.; Williams, J.S.

1977-01-01

Earlier studies of the ion bombardment induced ripple morphology on the surfaces of amorphous solids when compared with geomorphological effects are shown to possess many similar features. The present study, with 40 keV Ar + ion bombarded Si suggests that analogies are incomplete, however, and that greater similarities with the process of macroscopic sandblasting (corrosion) exist. It is shown that the genesis of wave like structures on Si is from isolated features, which have the appearance of ripple trains, which are faceted. It is suggested that these features result from particle flux enhancement processes near surface dimples generated by stress induced surface lifting. (author)

Topography of InP surface bombarded by O2+ ion beam

International Nuclear Information System (INIS)

Sun Zhaoqi

1997-01-01

The topography of InP surface bombarded by O 2 + ion beam was investigated. Rippled topographies were observed for bombarded samples, and the data show that the ripple formation starts from a sputtering depth of about 0.4 μm. The wavelength and the disorder of the ripples both increase as the sputtering depth increases. The wavelength of the ripples appears to be sputtering depth dependent rather than sputtering rate dependent. It is confirmed that the ion-beam-induced surface rippling can be effectively suppressed by sample rotation during bombardment

AES, EELS and TRIM simulation method study of InP(100 subjected to Ar+, He+ and H+ ions bombardment.

Directory of Open Access Journals (Sweden)

Abidri B.

2012-06-01

Full Text Available Auger Electron Spectroscopy (AES and Electron Energy Loss Spectroscopy (EELS have been performed in order to investigate the InP(100 surface subjected to ions bombardment. The InP(100 surface is always contaminated by carbon and oxygen revealed by C-KLL and O-KLL AES spectra recorded just after introduction of the sample in the UHV spectrometer chamber. The usually cleaning process of the surface is the bombardment by argon ions. However, even at low energy of ions beam (300 eV indium clusters and phosphorus vacancies are usually formed on the surface. The aim of our study is to compare the behaviour of the surface when submitted to He+ or H+ ions bombardment. The helium ions accelerated at 500V voltage and for 45 mn allow removing contaminants but induces damaged and no stoichiometric surface. The proton ions were accelerated at low energy of 500 eV to bombard the InP surface at room temperature. The proton ions broke the In-P chemical bonds to induce the formation of In metal islands. Such a chemical reactivity between hydrogen and phosphorus led to form chemical species such as PH and PH3, which desorbed from the surface. The chemical susceptibly and the small size of H+ advantaged their diffusion into bulk. Since the experimental methods alone were not able to give us with accuracy the disturbed depth of the target by these ions. We associate to the AES and EELS spectroscopies, the TRIM (Transport and Range of Ions in Matter simulation method in order to show the mechanism of interaction between Ar+, He+ or H+ ions and InP and determine the disturbed depth of the target by argon, helium or proton ions.

Effect of helium ion bombardment on hydrogen behaviour in stainless steel

International Nuclear Information System (INIS)

Guseva, M.I.; Stolyarova, V.G.; Gorbatov, E.A.

1987-01-01

The effect of helium ion bombardment on hydrogen behaviour in 12Kh18N10T stainless steel is investigated. Helium and hydrogen ion bombardment was conducted in the ILU-3 ion accelerator; the fluence and energy made up 10 16 -5x10 17 cm -2 , 30 keV and 10 16 -5x10 18 cm -2 , 10 keV respectively. The method of recoil nuclei was used for determination of helium and hydrogen content. Successive implantation of helium and hydrogen ions into 12Kh18N10T stainless steel results in hydrogen capture by defects formed by helium ions

Kinetics of interaction from low-energy-ion bombardment of surfaces

International Nuclear Information System (INIS)

Horton, C.C.

1988-01-01

The kinetics of interaction from low energy oxygen ion bombardment of carbon and Teflon surfaces have been investigated. The surfaces were bombarded with 4.5 to 93 eV oxygen ions and emitted species were observed with a mass spectrometer. To obtain the kinetic information, the ion beam was square pulse modulated and reaction products were observed as a function of time. The kinetic information is contained in the response of the emitted species to the pulsed ion beam. Oxygen bombardment of carbon produced CO in three parallel branches with each following an adsorption-desorption process. The fast branch, with a rate constants of 12,000/sec, appeared to be sputter induced an was absent below about 19 eV. The medium and slow branches, with rate constants of 850/sec and 45/sec respectively, has little energy dependence and appeared to be due to chemical sputtering from two sites. The ratio of the fraction of the medium branch to that of the slow was constant at 1:3. The bombardment of Teflon produced CF in two parallel branches, with one following a series process and the other an adsorb-desorb process. The rate constant of the other branch were 22,000/sec and 7,000/sec and the rate constant of the other branch was 90/sec. The total signal fell monotonically with decreasing ion energy with the fraction for each branch holding constant at 71% for the series and 29% for the adsorb-desorb

Silicon transport in sputter-deposited tantalum layers grown under ion bombardment

International Nuclear Information System (INIS)

Gallais, P.; Hantzpergue, J.J.; Remy, J.C.; Roptin, D.

1988-01-01

Tantalum was sputter deposited on (111) Si substrate under low-energy ion bombardment in order to study the effects of the ion energy on the silicon transport into the Ta layer. The Si substrate was heated up to 500 0 C during growth. For ion energies up to 180 eV silicon is not transported into tantalum and the growth temperature has no effect. An ion bombardment energy of 280 eV enhances the transport of silicon throughout the tantalum layer. Growth temperatures up to 300 0 C have no effect on the silicon transport which is mainly enhanced by the ion bombardment. For growth temperatures between 300 and 500 0 C, the silicon transport is also enhanced by the thermal diffusion. The experimental depth distribution of silicon is similar to the theoretical depth distribution calculated for the case of an interdiffusion. The ion-enhanced process of silicon transport is characterized by an activation energy of 0.4 eV. Silicon into the layers as-grown at 500 0 C is in both states, amorphous silicide and microcrystalline cubic silicon

Particle-In-Cell/Monte Carlo Simulation of Ion Back Bombardment in Photoinjectors

International Nuclear Information System (INIS)

Qiang, Ji; Corlett, John; Staples, John

2009-01-01

In this paper, we report on studies of ion back bombardment in high average current dc and rf photoinjectors using a particle-in-cell/Monte Carlo method. Using H 2 ion as an example, we observed that the ion density and energy deposition on the photocathode in rf guns are order of magnitude lower than that in a dc gun. A higher rf frequency helps mitigate the ion back bombardment of the cathode in rf guns

Compositional disordering of GaAs/AlGaAs multiple quantum wells using ion bombardment at elevated temperatures

International Nuclear Information System (INIS)

Anderson, K.K.; Donnelly, J.P.; Wang, C.A.; Woodhouse, J.D.; Haus, H.A.

1988-01-01

A new method has been developed for compositional mixing of heterostructures by ion bombardment at elevated temperatures. Complete mixing of a 1-μm-thick GaAs/AlGaAs 40-period multiple quantum well layer has been achieved by bombardment with 380 keV Ne + ions for 1 h with the sample at 700 0 C. This temperature is much lower than the annealing temperatures used in other vacancy-enhanced disordering techniques, and even lower temperatures and shorter durations should be possible. Compositional disordering is verified by sputter-profile Auger electron spectroscopy and transmission electron microscopy. Complete mixing is also demonstrated by optical transmission spectra of the disordered material, which exhibit the same band edge as a uniform alloy with the average aluminum mole fraction of the multiple quantum well layer

Z1 dependence of ion-induced electron emission from aluminum

International Nuclear Information System (INIS)

Alonso, E.V.; Baragiola, R.A.; Ferron, J.; Jakas, M.M.; Oliva-Florio, A.

1980-01-01

We have measured the electron emission yields γ of clean aluminum under bombardment with H + , H 2 + , D + , D 2 + , He + , B + , C + , N + , N 2 + , O + , O 2 + , F + , Ne + , S + , Cl + , Ar + , Kr + , and Xe + in the energy range 1.2--50 keV. The clean surfaces were prepared by in situ evaporation of high-purity Al under ultra-high-vacuum conditions. It is found that kinetic electron emission yields γ/sub k/, obtained after subtracting from the measured γ a contribution due to potential emission, are roughly proportional to the electronic stopping powers, for projectiles lighter than Al. For heavier projectiles there is a sizable contribution to electron emission from collisions involving rapidly recoiling target atoms, which increases with the mass of the projectile, and which dominates the threshold and near-threshold behavior of kinetic emission. The results, together with recently reported data on Auger electron emission from ion-bombarded Al show that the mechanism proposed by Parilis and Kishinevskii of inner-shell excitation and subsequent Auger decay is negligible for light ions and probably small for heavy ions on Al and in our energy range. We thus conclude that kinetic electron emission under bombardment by low-energy ions results mainly from the escape of excited valence electrons

Self-Assembled Gold Nano-Ripple Formation by Gas Cluster Ion Beam Bombardment.

Science.gov (United States)

Tilakaratne, Buddhi P; Chen, Quark Y; Chu, Wei-Kan

2017-09-08

In this study, we used a 30 keV argon cluster ion beam bombardment to investigate the dynamic processes during nano-ripple formation on gold surfaces. Atomic force microscope analysis shows that the gold surface has maximum roughness at an incident angle of 60° from the surface normal; moreover, at this angle, and for an applied fluence of 3 × 10 16 clusters/cm², the aspect ratio of the nano-ripple pattern is in the range of ~50%. Rutherford backscattering spectrometry analysis reveals a formation of a surface gradient due to prolonged gas cluster ion bombardment, although the surface roughness remains consistent throughout the bombarded surface area. As a result, significant mass redistribution is triggered by gas cluster ion beam bombardment at room temperature. Where mass redistribution is responsible for nano-ripple formation, the surface erosion process refines the formed nano-ripple structures.

Is low-energy-ion bombardment generated X-ray emission a secondary mutational source to ion-beam-induced genetic mutation?

Energy Technology Data Exchange (ETDEWEB)

Thongkumkoon, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Faculty of Science, Maejo University, Chiang Mai 50290 (Thailand); Thopan, P.; Yaopromsiri, C. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Suwannakachorn, D. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Yu, L.D., E-mail: yuld@fnrf.science.cmu.ac.th [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2013-07-15

Highlights: ► Detected X-ray emission from metal, plastic and biological samples. ► Characteristic X-ray emission was detected from metal but not from non-metals. ► Low-energy ion bombarded bacteria held in different sample holders. ► Bacteria held in metal holder had higher mutation rate than in plastic holder. ► Ion-beam-induced X-ray from biological sample is not a basic mutation source. -- Abstract: Low-energy ion beam biotechnology has achieved tremendous successes in inducing crop mutation and gene transfer. However, mechanisms involved in the related processes are not yet well understood. In ion-beam-induced mutation, ion-bombardment-produced X-ray has been proposed to be one of the secondary mutation sources, but the speculation has not yet been experimentally tested. We carried out this investigation to test whether the low-energy ion-beam-produced X-ray was a source of ion-beam-induced mutation. In the investigation, X-ray emission from 29-keV nitrogen- or argon- ion beam bombarded bacterial Escherichia coli (E. coli) cells held in a metal or plastic sample holder was in situ detected using a highly sensitive X-ray detector. The ion beam bombarded bacterial cells held in different material holders were observed for mutation induction. The results led to a conclusion that secondary X-ray emitted from ion-beam-bombarded biological living materials themselves was not a, or at least a negligible, mutational source, but the ion-beam-induced X-ray emission from the metal that made the sample holder could be a source of mutation.

Is low-energy-ion bombardment generated X-ray emission a secondary mutational source to ion-beam-induced genetic mutation?

International Nuclear Information System (INIS)

Thongkumkoon, P.; Prakrajang, K.; Thopan, P.; Yaopromsiri, C.; Suwannakachorn, D.; Yu, L.D.

2013-01-01

Highlights: ► Detected X-ray emission from metal, plastic and biological samples. ► Characteristic X-ray emission was detected from metal but not from non-metals. ► Low-energy ion bombarded bacteria held in different sample holders. ► Bacteria held in metal holder had higher mutation rate than in plastic holder. ► Ion-beam-induced X-ray from biological sample is not a basic mutation source. -- Abstract: Low-energy ion beam biotechnology has achieved tremendous successes in inducing crop mutation and gene transfer. However, mechanisms involved in the related processes are not yet well understood. In ion-beam-induced mutation, ion-bombardment-produced X-ray has been proposed to be one of the secondary mutation sources, but the speculation has not yet been experimentally tested. We carried out this investigation to test whether the low-energy ion-beam-produced X-ray was a source of ion-beam-induced mutation. In the investigation, X-ray emission from 29-keV nitrogen- or argon- ion beam bombarded bacterial Escherichia coli (E. coli) cells held in a metal or plastic sample holder was in situ detected using a highly sensitive X-ray detector. The ion beam bombarded bacterial cells held in different material holders were observed for mutation induction. The results led to a conclusion that secondary X-ray emitted from ion-beam-bombarded biological living materials themselves was not a, or at least a negligible, mutational source, but the ion-beam-induced X-ray emission from the metal that made the sample holder could be a source of mutation

FTIR and Vis-FUV real time spectroscopic ellipsometry studies of polymer surface modifications during ion beam bombardment

Science.gov (United States)

Laskarakis, A.; Gravalidis, C.; Logothetidis, S.

2004-02-01

The continuously increasing application of polymeric materials in many scientific and technological fields has motivated an extensive use of polymer surface treatments, which modify the physical and chemical properties of polymer surfaces leading to surface activation and promotion of the surface adhesion. Fourier transform IR spectroscopic ellipsometry (FTIRSE) and phase modulated ellipsometry (PME) in the IR and Vis-FUV spectral regions respectively have been employed for in situ and real time monitoring of the structural changes on the polymer surface obtained by Ar + ion bombardment. The polymers were industrially supplied polyethylene terephthalate (PET) and polyethylene naphthalate (PEN) membranes. The Ar + ion bombardment has found to change the chemical bonding of the films and especially the amount of the CO, C-C and CC groups. The detailed study of the FTIRSE spectra reveals important information about the effect of the Ar + ion bombardment on each of the above bonding groups. Also, the modification of the characteristic features, attributed to electronic transitions in specific bonds of PET and PEN macromolecules, has been studied using PME.

FTIR and Vis-FUV real time spectroscopic ellipsometry studies of polymer surface modifications during ion beam bombardment

International Nuclear Information System (INIS)

Laskarakis, A.; Gravalidis, C.; Logothetidis, S.

2004-01-01

The continuously increasing application of polymeric materials in many scientific and technological fields has motivated an extensive use of polymer surface treatments, which modify the physical and chemical properties of polymer surfaces leading to surface activation and promotion of the surface adhesion. Fourier transform IR spectroscopic ellipsometry (FTIRSE) and phase modulated ellipsometry (PME) in the IR and Vis-FUV spectral regions respectively have been employed for in situ and real time monitoring of the structural changes on the polymer surface obtained by Ar + ion bombardment. The polymers were industrially supplied polyethylene terephthalate (PET) and polyethylene naphthalate (PEN) membranes. The Ar + ion bombardment has found to change the chemical bonding of the films and especially the amount of the C-O, C-C and C-C groups. The detailed study of the FTIRSE spectra reveals important information about the effect of the Ar + ion bombardment on each of the above bonding groups. Also, the modification of the characteristic features, attributed to electronic transitions in specific bonds of PET and PEN macromolecules, has been studied using PME

Ion induced high energy electron emission from copper

International Nuclear Information System (INIS)

Ruano, G.; Ferron, J.

2008-01-01

We present measurements of secondary electron emission from Cu induced by low energy bombardment (1-5 keV) of noble gas (He + , Ne + and Ar + ) and Li + ions. We identify different potential and kinetic mechanisms and find the presence of high energetic secondary electrons for a couple of ion-target combinations. In order to understand the presence of these fast electrons we need to consider the Fermi shuttle mechanism and the different ion neutralization efficiencies.

Ion-induced electron emission from clean metals

International Nuclear Information System (INIS)

Baragiola, R.A.; Alonso, E.V.; Ferron, J.; Oliva-Florio, A.; Universidad Nacional de Cuyo, San Carlos de Bariloche

1979-01-01

We report recent experimental work on electron emission from clean polycrystalline metal surfaces under ion bombardment. We critically discuss existing theories and point out the presently unsolved problems. (orig.)

Ion induced high energy electron emission from copper

Energy Technology Data Exchange (ETDEWEB)

Ruano, G. [Instituto de Desarrollo Tecnologico para la Industria Quimica, Consejo Nacional de Investigaciones Cientificas y Tecnicas and Universidad Nacional del Litoral Gueemes 3450 CC 91, 3000 Santa Fe (Argentina)], E-mail: gdruano@ceride.gov.ar; Ferron, J. [Instituto de Desarrollo Tecnologico para la Industria Quimica, Consejo Nacional de Investigaciones Cientificas y Tecnicas and Universidad Nacional del Litoral Gueemes 3450 CC 91, 3000 Santa Fe (Argentina); Departamento de Ingenieria de Materiales, Facultad de Ingenieria Quimica, Consejo Nacional de Investigaciones Cientificas y Tecnicas and Universidad Nacional del Litoral Gueemes 3450 CC 91, 3000 Santa Fe (Argentina)

2008-11-15

We present measurements of secondary electron emission from Cu induced by low energy bombardment (1-5 keV) of noble gas (He{sup +}, Ne{sup +} and Ar{sup +}) and Li{sup +} ions. We identify different potential and kinetic mechanisms and find the presence of high energetic secondary electrons for a couple of ion-target combinations. In order to understand the presence of these fast electrons we need to consider the Fermi shuttle mechanism and the different ion neutralization efficiencies.

Mechanism of conductivity type conversion in p-Hg1-xCdxTe crystals under low energy ion bombardment

International Nuclear Information System (INIS)

Bogoboyashchij, V.V.; Izhnin, I.I.

2000-01-01

Conditions giving rise to accelerated diffusion of Hg under bombardment of p-Hg 1-x Cd x Te by low-energy particles are analyzed and probable mechanisms of the phenomenon are suggested, permitting qualitative and quantitative agreement with experimental data. Analysis indicates that basic regularities of p-n-conversion during Hg 0.8 Cd 0.2 Te crystal bombardment by neutralized ions can be easily explained in the framework of traditional notions of mercury chemical diffusion in this material. The regularities stem from specific features of defect formation in Hg 0.8 Cd 0.2 Te, on the one hand, and from a high concentration of intrinsic electrons and holes, screening effectively the defective layer electric field, on the other hand. The high rate of conversion during ion bombardment compared with the rate of conversion during annealing in mercury vapors can be explained by the fact that a great number of nonequilibrium interstitial atoms of mercury, by far exceeding the value during thermal annealing, is crated near the surface of the crystal bombarded [ru

Destruction of C60 films by boron ion bombardment

International Nuclear Information System (INIS)

Ren Zhongmin; Du Yuancheng; Ying Zhifeng; Xiong Xiaxing; Li Fuming

1995-01-01

C 60 films are bombarded by 100 keV boron ion beams at doses ranging from 3x10 14 to 1x10 16 /cm 2 . The bombarded films are analyzed using Fourier transform infrared spectroscopy (FTIR), Raman spectra and X-ray diffraction (XRD) measurements. Most C 60 soccer-balls in the implanted region in the films are found to be broken at a dose over 1x10 15 /cm 2 , while at a dose less than 6x10 14 /cm 2 a few C 60 molecules remain undestroyed and maintain some crystal structure. The results of the analyses suggest a complete disintegration of a C 60 molecule under B + bombardment. ((orig.))

Doubly versus singly positively charged oxygen ions back-scattered from a silicon surface under dynamic O2+ bombardment

International Nuclear Information System (INIS)

Franzreb, Klaus; Williams, Peter; Loerincik, Jan; Sroubek, Zdenek

2003-01-01

Mass-resolved (and emission-charge-state-resolved) low-energy ion back-scattering during dynamic O 2 + bombardment of a silicon surface was applied in a Cameca IMS-3f secondary ion mass spectrometry (SIMS) instrument to determine the bombarding energy dependence of the ratio of back-scattered O 2+ versus O + . While the ratio of O 2+ versus O + drops significantly at reduced bombarding energies, O 2+ back-scattered from silicon was still detectable at an impact energy (in the lab frame) as low as about 1.6 keV per oxygen atom. Assuming neutralization prior to impact, O 2+ ion formation in an asymmetric 16 O→ 28 Si collision is expected to take place via 'collisional double ionization' (i.e. by promotion of two outer O 2p electrons) rather than by the production of an inner-shell (O 2s or O 1s) core hole followed by Auger-type de-excitation during or after ejection. A molecular orbital (MO) correlation diagram calculated for a binary 'head-on' O-Si collision supports this interpretation

Ion bombardment induced topography evolution on low index crystal surfaces of Cu and Pb

International Nuclear Information System (INIS)

Tanovic, L.; Tanovic, N.; Carter, G.; Nobes, M.J.

1993-01-01

(100), (110) and (111) oriented single crystal surfaces of Cu and Pb have been bombarded with inert gas ions, self ions, ions of the other substrate species and Bi in the energy range 50-150 keV and in the fluence range 10 15 -10 18 ions.cm 2 . The evolving surface topography was observed by scanning electron microscopy. This topography was observed to be strongly influenced by ion species and surface orientation but the habit of the topography was delineated at low fluences and the features increased in size and density with increasing fluence with some mutation to the more stable of the features. As an example Bi and Pb bombardment of (100) Cu leads to little topographic evolution, (110) Cu develops a system of parallel ridges with (100) facets and (111) Cu develops a prismatic surface, each prism possessing (100) facets. These, and the more general, results cannot be explained by surface erosion by sputtering theory alone (this predicts surface stability of the lowest sputtering yield orientation (110), nor by surface free energy density minimisation criteria (this predicts stability of (111) surfaces). It is proposed that the observed topography is most strongly related to the crystallographic form of precipitates of implanted species. (orig.)

Development of pits and cones on ion bombarded copper

International Nuclear Information System (INIS)

Tanovic, L.A.; Carter, G.; Nobes, M.J.; Whitton, I.L.; Williams, J.S.

1980-01-01

The formation of pits and cones on Ar ion bombarded copper has been studied. Carefully polished surfaces of large grained 99.999% pure copper crystals have been bombarded at normal incidence with 40 keV argon ions. The cone formation has been investigated for annealed and non-annealed crystals at room temperature and at 30 K and in the case of monocrystal and polycrystal samples. Although in the most other studies the presence of impurities is as a necessary condition for generation of cones and pits the obtained experimental results show that under certain conditions these features are formed on clean surfaces. It is shown that the dominant parameter in the production of cones on copper is the crystal orientation [ru

Simulation study of secondary electron images in scanning ion microscopy

CERN Document Server

Ohya, K

2003-01-01

The target atomic number, Z sub 2 , dependence of secondary electron yield is simulated by applying a Monte Carlo code for 17 species of metals bombarded by Ga ions and electrons in order to study the contrast difference between scanning ion microscopes (SIM) and scanning electron microscopes (SEM). In addition to the remarkable reversal of the Z sub 2 dependence between the Ga ion and electron bombardment, a fine structure, which is correlated to the density of the conduction band electrons in the metal, is calculated for both. The brightness changes of the secondary electron images in SIM and SEM are simulated using Au and Al surfaces adjacent to each other. The results indicate that the image contrast in SIM is much more sensitive to the material species and is clearer than that for SEM. The origin of the difference between SIM and SEM comes from the difference in the lateral distribution of secondary electrons excited within the escape depth.

Ion bombardment techniques - recent developments in SIMS

International Nuclear Information System (INIS)

Konarski, P.; Miśnik, M.

2013-01-01

We present a short review of cluster ion bombardment technique recently applied in SIMS. Many advantages of using cluster ion beams are specified over monoatomic ion species. Cluster ions open really new perspectives especially in organic based structures analysis. Nevertheless cluster ions are not the perfect solution and still new ideas of ion erosion in SIMS are needed. Another issue discussed is 'storing matter' technique applied for quantitative analysis in SIMS. Simple idea of sputter deposition of eroded material onto rotating substrate and then analysing the stored material allows to avoid strong matrix effects in SIMS. Presented are the results performed in Tele and Radio Research Institute, Warszawa, Poland. These are the first results of ‘storing matter’ technique performed in one analytical chamber of SIMS instrument. (authors)

Production of the Ne Auger electrons by Ne/sup +/ bombardment of Mg and Al surfaces

Energy Technology Data Exchange (ETDEWEB)

Ferrante, J; Pepper, S V [National Aeronautics and Space Administration, Cleveland, Ohio (USA). Lewis Research Center

1976-07-01

The authors have bombarded Mg and Al surfaces with Ne/sup +/ ions and in this letter present evidence for the production of an inner shell vacancy in the Ne by the asymmetric Ne-Mg and Ne-Al collision. In addition, autoionization states of neutral Ne have been observed. These states are to be distinguished from the more usual case in Auger electron spectroscopy of de-excitation of an ion with a core vacancy.

Ion bombardment simulation: a review related to fusion radiation damage

International Nuclear Information System (INIS)

Brimhall, J.L.

1975-01-01

Prime emphasis is given to reviewing the ion bombardment data on the refractory metals molybdenum, niobium and vanadium which have been proposed for use in advanced fusion devices. The temperature and dose dependence of the void parameters are correlated among these metals. The effect of helium and hydrogen gas on the void parameters is also included. The similarities and differences of the response of these materials to high dose, high temperature radiation damage are evaluated. Comparisons are made with results obtained from stainless steel and nickel base alloys. The ion bombardment data is then compared and correlated, as far as possible, with existing neutron data on the refractory metals. The theoretically calculated damage state produced by neutrons and ions is also briefly discussed and compared to experimental data wherever possible. The advantages and limitations of ion simulation in relation to fusion radiation damage are finally summarized

Effects of low and high energy ion bombardment on ETFE polymer

Science.gov (United States)

Minamisawa, R. A.; De Almeida, A.; Abidzina, V.; Parada, M. A.; Muntele, I.; Ila, D.

2007-04-01

The polymer ethylenetetrafluoroethylene (ETFE) is used as anti-adherent coatings for food packages and radiation dosimeters. In this work, we compare the damage induced in ETFE bombarded with 100 keV Si ions with that induced by 1 MeV proton bombardment. The damage depends on the type, energy and intensity of the irradiation. Irradiated films were analyzed with optical absorption photospectrometry, Raman spectroscopy and Fourier transform infrared (FTIR) spectroscopy to determine the chemical nature of the structural changes caused by ion irradiation. Computer simulations were performed to evaluate the radiation damage.

Model to estimate fractal dimension for ion-bombarded materials

Energy Technology Data Exchange (ETDEWEB)

Hu, A., E-mail: hu77@purdue.edu; Hassanein, A.

2014-03-15

Comprehensive fractal Monte Carlo model ITMC-F (Hu and Hassanein, 2012 [1]) is developed based on the Monte Carlo ion bombardment simulation code, i.e., Ion Transport in Materials and Compounds (ITMC) code (Hassanein, 1985 [2]). The ITMC-F studies the impact of surface roughness on the angular dependence of sputtering yield. Instead of assuming material surfaces to be flat or composed of exact self-similar fractals in simulation, we developed a new method to describe the surface shapes. Random fractal surfaces which are generated by midpoint displacement algorithm and support vector machine algorithm are combined with ITMC. With this new fractal version of ITMC-F, we successfully simulated the angular dependence of sputtering yield for various ion-target combinations, with the input surface roughness exponent directly depicted from experimental data (Hu and Hassanein, 2012 [1]). The ITMC-F code showed good agreement with the experimental data. In advanced, we compare other experimental sputtering yield with the results from ITMC-F to estimate the surface roughness exponent for ion-bombarded material in this research.

The development of cones and associated features on ion bombarded copper

International Nuclear Information System (INIS)

Whitton, J.L.; Carter, G.; Nobes, M.J.; Williams, J.S.

1977-01-01

Observations of ion-bombardment-induced surface modifications on crystalline copper substrates have been made using scanning electron microscopy. The delineation and development of grain boundary edges, faceted and terraced etch pits and small-scale ripple structure, together with the formation of faceted conical features, have all been observed on low and high purity polycrystalline substrates. In general, the density of such surface morphological features, although variable from grain to grain, is higher in the proximity of grain boundaries. In particular, cones are only found within regions where other surface erosional features are present and it would appear that the development of these other features is a pre-requisite to cone generation in high-purity crystalline substrates. We suggest the operation of a defect-induced mechanism of cone formation whereby sputter elaboration of bulk defects (either pre-existing or bombardment-induced) leads to the formation and development of surface features which, in turn, may intersect and result in the generation of cones. (author)

The development of cones and associated features on ion bombarded copper

International Nuclear Information System (INIS)

Whitton, J.L.; Williams, J.S.

1977-01-01

Observations of ion-bombardment-induced surface modifications on crystalline copper substrates have been made using scanning electron microscopy. The delineation and development of grain boundary edges, faceted and terraced etch pits and small-scale ripple structure, together with the formation of faceted conical features have all been observed on low and high purity polycrystalline substrates. In general, the density of such surface morphological features, although variable from grain to grain, is higher in the proximity of grain boundaries. In particular, cones are only found within regions where other surface erosional features are present and it would appear that the development of these other surface features is a pre-requisite to cone generation in high-purity crystalline substrates. The authors suggest the operation of a defect-induced mechanism of cone formation whereby sputter elaboration of bulk defects (either preexisting or bombardment-induced) leads to the formation and development of surface features which, in turn, may intersect and result in the generation of cones. (Auth.)

Engineering catalytic activity via ion beam bombardment of catalyst supports for vertically aligned carbon nanotube growth

Science.gov (United States)

Islam, A. E.; Nikolaev, P.; Amama, P. B.; Zakharov, D.; Sargent, G.; Saber, S.; Huffman, D.; Erford, M.; Semiatin, S. L.; Stach, E. A.; Maruyama, B.

2015-09-01

Carbon nanotube growth depends on the catalytic activity of metal nanoparticles on alumina or silica supports. The control on catalytic activity is generally achieved by variations in water concentration, carbon feed, and sample placement on a few types of alumina or silica catalyst supports obtained via thin film deposition. We have recently expanded the choice of catalyst supports by engineering inactive substrates like c-cut sapphire via ion beam bombardment. The deterministic control on the structure and chemistry of catalyst supports obtained by tuning the degree of beam-induced damage have enabled better regulation of the activity of Fe catalysts only in the ion beam bombarded areas and hence enabled controllable super growth of carbon nanotubes. A wide range of surface characterization techniques were used to monitor the catalytically active surface engineered via ion beam bombardment. The proposed method offers a versatile way to control carbon nanotube growth in patterned areas and also enhances the current understanding of the growth process. With the right choice of water concentration, carbon feed and sample placement, engineered catalyst supports may extend the carbon nanotube growth yield to a level that is even higher than the ones reported here, and thus offers promising applications of carbon nanotubes in electronics, heat exchanger, and energy storage.

Electronic excitation effects on secondary ion emission in highly charged ion-solid interaction

International Nuclear Information System (INIS)

Sekioka, T.; Terasawa, M.; Mitamura, T.; Stoeckli, M.P.; Lehnert, U.; Fehrenbach, C.

2001-01-01

In order to investigate the secondary ion emission from the surface of conductive materials bombarded by highly charged heavy ions, we have done two types of experiments. First, we have measured the yield of the sputtered ions from the surface of solid targets of conductive materials (Al, Si, Ni, Cu) bombarded by Xe q+ (q=15-44) at 300 keV (v p =0.30 a.u) and at 1.0 MeV (v p =0.54 a.u). In view of the secondary ion yields as a function of the potential energy of the projectile, the increase rates below q=35, where the potential energy amounts to 25.5 keV, were rather moderate and showed a prominent increase above q=35. These phenomena were rather strong in the case of the metal targets. Second, we have measured the energy dependence of the yield of the sputtered ions from the surface of solid targets of conductive materials (C, Al) bombarded by Xe q+ (q=30,36,44) between 76 keV (v p =0.15 a.u) and 6.0 MeV (v p =1.3 a.u). A broad enhancement of the secondary ion yield has been found for Al target bombarded by Xe 44+ . From these experimental results, the electronic excitation effects in conductive materials for impact of slow highly charged heavy ions bearing high potential energy is discussed

Effects of low-energy ion beam bombardment on metal oxides

International Nuclear Information System (INIS)

Sullivan, J.L.; Saied, S.O.; Choudhury, T.

1993-01-01

This paper describes a study of Ar ion bombardment damage in metal oxides. In the energy range 1 to 5 keV, preferential oxygen removal and reduction of the oxides was found to depend on ion current density, but to be independent of beam energy. (author)

Confirming the key role of Ar+ ion bombardment in the growth feature of nanostructured carbon materials by PECVD

Science.gov (United States)

Liu, Yulin; Lin, Jinghuang; Jia, Henan; Chen, Shulin; Qi, Junlei; Qu, Chaoqun; Cao, Jian; Feng, Jicai; Fei, Weidong

2017-11-01

In order to confirm the key role of Ar+ ion bombardment in the growth feature of nanostructured carbon materials (NCMs), here we report a novel strategy to create different Ar+ ion states in situ in plasma enhanced chemical vapor deposition (PECVD) by separating catalyst film from the substrate. Different bombardment environments on either side of the catalyst film were created simultaneously to achieve multi-layered structural NCMs. Results showed that Ar+ ion bombardment is crucial and complex for the growth of NCMs. Firstly, Ar+ ion bombardment has both positive and negative effects on carbon nanotubes (CNTs). On one hand, Ar+ ions can break up the graphic structure of CNTs and suppress thin CNT nucleation and growth. On the other hand, Ar+ ion bombardment can remove redundant carbon layers on the surface of large catalyst particles which is essential for thick CNTs. As a result, the diameter of the CNTs depends on the Ar+ ion state. As for vertically oriented few-layer graphene (VFG), Ar+ ions are essential and can even convert the CNTs into VFG. Therefore, by combining with the catalyst separation method, specific or multi-layered structural NCMs can be obtained by PECVD only by changing the intensity of Ar+ ion bombardment, and these special NCMs are promising in many fields.

Confirming the key role of Ar+ ion bombardment in the growth feature of nanostructured carbon materials by PECVD.

Science.gov (United States)

Liu, Yulin; Lin, Jinghuang; Jia, Henan; Chen, Shulin; Qi, Junlei; Qu, Chaoqun; Cao, Jian; Feng, Jicai; Fei, Weidong

2017-11-24

In order to confirm the key role of Ar + ion bombardment in the growth feature of nanostructured carbon materials (NCMs), here we report a novel strategy to create different Ar + ion states in situ in plasma enhanced chemical vapor deposition (PECVD) by separating catalyst film from the substrate. Different bombardment environments on either side of the catalyst film were created simultaneously to achieve multi-layered structural NCMs. Results showed that Ar + ion bombardment is crucial and complex for the growth of NCMs. Firstly, Ar + ion bombardment has both positive and negative effects on carbon nanotubes (CNTs). On one hand, Ar + ions can break up the graphic structure of CNTs and suppress thin CNT nucleation and growth. On the other hand, Ar + ion bombardment can remove redundant carbon layers on the surface of large catalyst particles which is essential for thick CNTs. As a result, the diameter of the CNTs depends on the Ar + ion state. As for vertically oriented few-layer graphene (VFG), Ar + ions are essential and can even convert the CNTs into VFG. Therefore, by combining with the catalyst separation method, specific or multi-layered structural NCMs can be obtained by PECVD only by changing the intensity of Ar + ion bombardment, and these special NCMs are promising in many fields.

Heavy-Ion-Induced Electronic Desorption of Gas from Metals

CERN Document Server

Molvik, A W; Mahner, E; Kireeff Covo, M; Bellachioma, M C; Bender, M; Bieniosek, F M; Hedlund, E; Krämer, A; Kwan, J; Malyshev, O B; Prost, L; Seidl, P A; Westenskow, G; Westerberg, L

2007-01-01

During heavy-ion operation in several particle accelerators worldwide, dynamic pressure rises of orders of magnitude were triggered by lost beam ions that bombarded the vacuum chamber walls. This ion-induced molecular desorption, observed at CERN, GSI, and BNL, can seriously limit the ion beam lifetime and intensity of the accelerator. From dedicated test stand experiments we have discovered that heavy-ion-induced gas desorption scales with the electronic energy loss (dEe/dx) of the ions slowing down in matter; but it varies only little with the ion impact angle, unlike electronic sputtering.

Effects of ion beam bombardment of carbon thin films deposited onto tungsten carbide and tool steels

Energy Technology Data Exchange (ETDEWEB)

Awazu, Kaoru; Yoshida, Hiroyuki [Industrial Research Inst. of Ishikawa (Japan); Watanabe, Hiroshi [Gakushuin Univ., Tokyo (Japan); Iwaki, Masaya; Guzman, L [RIKEN, Saitama (Japan)

1992-04-15

A study was made of the effects of argon ion bombardment of carbon thin films deposited onto WC and tool steels. Carbon thin film deposition was performed at various temperatures ranging from 200degC to 350degC, using C{sub 6}H{sub 6} gas. Argon ion beam bombardment of the films was carried out at an energy of 150 keV with a dose of 1x10{sup 16} ions cm{sup -2}. The hardness and adhesion of the films were measured by means of Knoop hardness and scratch tests respectively. The structure of the carbon films was estimated by laser Raman spectroscopy, and the relations were investigated between the mechanical properties and the structure of the films. The hardness of carbon thin films increases as their deposition temperature decreases; this tendency corresponds to the increase in amorphous structure estimated by Raman spectra. Argon ion bombardment results in constant hardness and fraction of amorphous structure. Argon ion beam bombardment of films prior to additional carbon deposition may cause the adhesion of the subsequently deposited films to improve. It is concluded that argon ion beam bombardment is useful for improving the properties of carbon films deposited onto WC and tool steels. (orig.).

Effects of ion beam bombardment of carbon thin films deposited onto tungsten carbide and tool steels

International Nuclear Information System (INIS)

Awazu, Kaoru; Yoshida, Hiroyuki; Watanabe, Hiroshi; Iwaki, Masaya; Guzman, L.

1992-01-01

A study was made of the effects of argon ion bombardment of carbon thin films deposited onto WC and tool steels. Carbon thin film deposition was performed at various temperatures ranging from 200degC to 350degC, using C 6 H 6 gas. Argon ion beam bombardment of the films was carried out at an energy of 150 keV with a dose of 1x10 16 ions cm -2 . The hardness and adhesion of the films were measured by means of Knoop hardness and scratch tests respectively. The structure of the carbon films was estimated by laser Raman spectroscopy, and the relations were investigated between the mechanical properties and the structure of the films. The hardness of carbon thin films increases as their deposition temperature decreases; this tendency corresponds to the increase in amorphous structure estimated by Raman spectra. Argon ion bombardment results in constant hardness and fraction of amorphous structure. Argon ion beam bombardment of films prior to additional carbon deposition may cause the adhesion of the subsequently deposited films to improve. It is concluded that argon ion beam bombardment is useful for improving the properties of carbon films deposited onto WC and tool steels. (orig.)

Effect of the ion bombardment on the apparent barrier height in GaAs Schottky junctions

International Nuclear Information System (INIS)

Horvath, Zs. J.

1994-01-01

The bombardment of the semiconductor with different particles often results in the change of the doping concentration at the semiconductor surface. In this paper the effects of this near-interface concentration change on the apparent and real Schottky barrier heights are discussed. Experimental results obtained in GaAs Schottky junctions prepared on ion-bombarded semiconductor surfaces are analysed, and it is shown that their electrical characteristics are strongly influenced by the near-interface concentration change due to the ion bombardment. (author). 36 refs., 2 figs

Ion bombardment effects on surface states in selected oxide systems: rutile and alkaline earth titanates

International Nuclear Information System (INIS)

Gruen, D.M.

1978-01-01

In this paper, the nature of the surface states of n-type TiO 2 and SrTiO 3 is discussed and the role of ion bombardment in modifying the properties of these states is elucidated. Insofar as possible, the interrelationships between oxide nonstoichiometry, surface states, ion bombardment effects and photoelectrolysis are explored

Alteration of the UV-visible reflectance spectra of H2O ice by ion bombardment

Science.gov (United States)

Sack, N. J.; Boring, J. W.; Johnson, R. E.; Baragiola, R. A.; Shi, M.

1991-01-01

Satellite in the Jovian and Saturnian system exhibit differences in reflectivity between their 'leading' and 'trailing' surfaces which can affect the local vapor pressure. Since these differences are thought to be due to differences in the flux of bombarding magnetospheric ions, the influence of ion impact on the UV-visible reflectance of water ice surfaces (20-90 K) by keV ion bombardment was studied. An observed decrease in reflectance in the UV is attributed to rearrangement processes that affect the physical microstructure and surface 'roughness'. The ratio in reflectance of bombarded to freshly deposited films is compared to the ratio of the reflectance of the leading and trailing hemispheres for Europa and Ganymede.

High Energy Ion Bombardment Simulation Facility at the University of Pittsburgh

International Nuclear Information System (INIS)

McGruer, J.N.; Choyke, W.J.; Doyle, N.J.; Spitznagel, J.A.

1975-01-01

The High Energy Ion Bombardment Simulation (HEIBS) Facility located at the University of Pittsburgh is now operational. The E-22 tandem accelerator of the Nuclear Physics Laboratory, fitted with a UNIS source, provides the heavy high energy ions. An auxiliary Van de Graaff accelerator is used for the simultaneous production of He ions. Special features of the simulation laboratory are reported

Ion bombardment induced smoothing of amorphous metallic surfaces: Experiments versus computer simulations

International Nuclear Information System (INIS)

Vauth, Sebastian; Mayr, S. G.

2008-01-01

Smoothing of rough amorphous metallic surfaces by bombardment with heavy ions in the low keV regime is investigated by a combined experimental-simulational study. Vapor deposited rough amorphous Zr 65 Al 7.5 Cu 27.5 films are the basis for systematic in situ scanning tunneling microscopy measurements on the smoothing reaction due to 3 keV Kr + ion bombardment. The experimental results are directly compared to the predictions of a multiscale simulation approach, which incorporates stochastic rate equations of the Langevin type in combination with previously reported classical molecular dynamics simulations [Phys. Rev. B 75, 224107 (2007)] to model surface smoothing across length and time scales. The combined approach of experiments and simulations clearly corroborates a key role of ion induced viscous flow and ballistic effects in low keV heavy ion induced smoothing of amorphous metallic surfaces at ambient temperatures

Cesium ion bombardment of metal surfaces

International Nuclear Information System (INIS)

Tompa, G.S.

1986-01-01

The steady state cesium coverage due to cesium ion bombardment of molybdenum and tungsten was studied for the incident energy range below 500 eV. When a sample is exposed to a positive ion beam, the work function decreases until steady state is reached with a total dose of less than ≅10 16 ions/cm 2 , for both tungsten and molybdenum. A steady state minimum work function surface is produced at an incident energy of ≅100 eV for molybdenum and at an incident energy of ≅45 eV for tungsten. Increasing the incident energy results in an increase in the work function corresponding to a decrease in the surface coverage of cesium. At incident energies less than that giving the minimum work function, the work function approaches that of cesium metal. At a given bombarding energy the cesium coverage of tungsten is uniformly less than that of molybdenum. Effects of hydrogen gas coadsorption were also examined. Hydrogen coadsorption does not have a large effect on the steady state work functions. The largest shifts in the work function due to the coadsorption of hydrogen occur on the samples when there is no cesium present. A theory describing the steady-state coverage was developed is used to make predictions for other materials. A simple sticking and sputtering relationship, not including implantation, cannot account for the steady state coverage. At low concentrations, cesium coverage of a target is proportional to the ratio of (1 - β)/γ where β is the reflection coefficient and γ is the sputter yield. High coverages are produced on molybdenum due to implantation and low backscattering, because molybdenum is lighter than cesium. For tungsten the high backscattering and low implantation result in low coverages

Heavy-ion induced desorption yields of cryogenic surfaces bombarded with 4.2 MeV/u lead ions

CERN Document Server

Mahner, E; Evans, L; Kollmus, H; Küchler, D; Scrivens, R; Severin, D; Wengenroth, M; CERN. Geneva. ATS Department

2011-01-01

The ion-induced desorption experiment, installed in the CERN Heavy-Ion Accelerator LINAC 3, has been used to study the dynamic outgassing of cryogenic surfaces. Two different targets, bare and goldcoated copper, were bombarded under perpendicular impact with 4.2 MeV/u Pb54+ ions. Partial pressure rises of H2, CH4, CO, and CO2 and effective desorption yields were measured at 300, 77, and 6.3 K using single shot and continuous ion bombardment techniques. We find that the heavy-ion-induced desorption yield is temperature dependent and investigate the influence of CO gas cryosorbed at 6.3 K. The gain in desorption yield reduction at cryogenic temperature vanishes after several monolayers of CO are cryosorbed on both targets. In this paper we describe the new cryogenic target assembly, the temperature-dependent pressure rise, desorption yield, and gas adsorption measurements.

Ion bombardment damage in a modified Fe-9Cr-1Mo steel

International Nuclear Information System (INIS)

Farrell, K.; Lee, E.H.

1984-01-01

A normalized-and-tempered Fe-9Cr-1Mo steel, with small Nb and V additions, was bombarded with 4-MeV iron ions to 100 dpa at 400, 450, 500, 550, and 600 0 C. Major damage feature was dislocation tangles which coarsened with increasing bombardment temperature. Sparse cavities were heterogeneously distributed at 500 and 550 0 C. Incorporation of helium and deuterium simultaneously in the bombardments at rates of 10 and 45 appM/dpa, respectively, introduced very high concentrations of small cavities at all temperatures, many of them on grain boundaries. These cavities were shown to be promoted by helium. A small fraction of the matrix cavities exhibited bias-driven growth at 500 and 550 0 C, with swelling 0 C higher than the peak swelling temperature found in neutron irradiations, which is compatible with the higher damage rate used in the ion bombardments. High concentrations of subgrain boundaries and dislocations resulting from the heat treatment, and unbalanced cavity and dislocation sink strengths in the damage structures contribute to the swelling resistance. Such resistance may not be permanent. High densities of bubbles on grain boundaries indicate a need for helium embrittlement tests

Ion bombardment effect on surface state of metal

International Nuclear Information System (INIS)

Vaulin, E.P.; Georgieva, N.E.; Martynenko, T.P.

1990-01-01

The effect of slow argon ion bombardment on the surface microstructure of polycrystalline copper as well as the effect of surface state on sputtering of D-16 polycrystalline alloy are experimentally studied. Reduction of copper surface roughness is observed. It is shown that the D-16 alloy sputtering coefficient is sensitive to the surface state within the limits of the destructed surface layer

Statistical characterization of surface defects created by Ar ion bombardment of crystalline silicon

International Nuclear Information System (INIS)

Ghazisaeidi, M.; Freund, J. B.; Johnson, H. T.

2008-01-01

Ion bombardment of crystalline silicon targets induces pattern formation by the creation of mobile surface species that participate in forming nanometer-scale structures. The formation of these mobile species on a Si(001) surface, caused by sub-keV argon ion bombardment, is investigated through molecular dynamics simulation of Stillinger-Weber [Phys. Rev. B 31, 5262 (1985)] silicon. Specific criteria for identifying and classifying these mobile atoms based on their energy and coordination number are developed. The mobile species are categorized based on these criteria and their average concentrations are calculated

Formation of a highly doped ultra-thin amorphous carbon layer by ion bombardment of graphene

Science.gov (United States)

Piotr Michałowski, Paweł; Pasternak, Iwona; Ciepielewski, Paweł; Guinea, Francisco; Strupiński, Włodek

2018-07-01

Ion bombardment of graphene leads to the formation of defects which may be used to tune properties of the graphene based devices. In this work, however, we present that the presence of the graphene layer on a surface of a sample has a significant impact on the ion bombardment process: broken sp2 bonds react with the incoming ions and trap them close to the surface of the sample, preventing a standard ion implantation. For an ion bombardment with a low impact energy and significant dose (in the range of 1014 atoms cm‑2) an amorphization of the graphene layer is observed but at the same time, most of the incoming ions do not penetrate the sample but stop at the surface, thus forming a highly doped ultra-thin amorphous carbon layer. The effect may be used to create thin layers containing desired atoms if no other technique is available. This approach is particularly useful for secondary ion mass spectrometry where a high concentration of Cs at the surface of a sample significantly enhances the negative ionization probability, allowing it to reach better detection limits.

Ion bombardment effects on the fatigue life of stainless steel under simulated fusion first wall conditions

International Nuclear Information System (INIS)

Kohse, G.; Harling, O.K.

1983-01-01

Pressurized tube specimens have been exposed to simultaneous multi-energy surface ion bombardment, fast neutron irradiation and stress and temperature cycling, in a simulation of a possible fusion reactor first wall environment. After ion bombardments equivalent to months-years of reactor operation and up to 30,000 cycles, no detrimental effects on post-irradiation fatigue life were found. The ion damage is found to enhance surface cracking, but this effect is limited to the several micron surface layer in which the ions are implanted

Secondary emission of negative ions and electrons resulting from electronic sputtering of cesium salts

International Nuclear Information System (INIS)

Allali, H.; Nsouli, B.; Thomas, J.P.

1993-04-01

Secondary ion emission of negative ions and electrons from alkali salts bombarded with high energy (9 MeV) Ar +++ is discussed. Quite different features are observed according to the nature of the salt investigated (halide or oxygenated). In the case of cesium, the electron emission from halides is characterized by intense electron showers (several hundred electrons) with narrow distributions in intensity and orientation. Conversely, for oxygenated salts, these distributions are broader, much less intense (one order of magnitude), and the ion emission exhibits an dissymmetry, which has never been observed for inorganics. This last result is interpreted in terms of radiolysis of the oxygenated salt, a process well documented for gamma-ray irradiation, but not yet reported in secondary ion emission. (author) 17 refs.; 10 figs

In-Situ atomic force microscopic observation of ion beam bombarded plant cell envelopes

International Nuclear Information System (INIS)

Sangyuenyongpipat, S.; Yu, L.D.; Brown, I.G.; Seprom, C.; Vilaithong, T.

2007-01-01

A program in ion beam bioengineering has been established at Chiang Mai University (CMU), Thailand, and ion beam induced transfer of plasmid DNA molecules into bacterial cells (Escherichia coli) has been demonstrated. However, a good understanding of the fundamental physical processes involved is lacking. In parallel work, onion skin cells have been bombarded with Ar + ions at energy 25 keV and fluence1-2 x 10 15 ions/cm 2 , revealing the formation of microcrater-like structures on the cell wall that could serve as channels for the transfer of large macromolecules into the cell interior. An in-situ atomic force microscope (AFM) system has been designed and installed in the CMU bio-implantation facility as a tool for the observation of these microcraters during ion beam bombardment. Here we describe some of the features of the in-situ AFM and outline some of the related work

Additional ion bombardment in PVD processes generated by a superimposed pulse bias voltage

International Nuclear Information System (INIS)

Olbrich, W.; Kampschulte, G.

1993-01-01

The superimposed pulse bias voltage is a tool to apply an additional ion bombardment during deposition in physical vapour deposition (PVD) processes. It is generated by the combination of a d.c. ground voltage and a higher d.c. pulse voltage. Using a superimposed pulse bias voltage in ion-assisted PVD processes effects an additional all-around ion bombardment on the surface with ions of higher energy. Both metal and reactive or inert-gas ions are accelerated to the surface. The basic principles and important characteristics of this newly developed process such as ion fluxes or deposition rates are shown. Because of pulsing the high voltage, the deposition temperature does not increase much. The adhesion, structure, morphology and internal stresses are influenced by these additional ion impacts. The columnar growth of the deposited films could be suppressed by using the superimposed pulse bias voltage without increasing the deposition temperature. Different metallizations (Cr and Cu) produced by arc and sputter ion plating are investigated. Carbon-fibre-reinforced epoxy are coated with PVD copper films for further treatment in electrochemical processes. (orig.)

The new generations of power components will depend on neutron and/or electron bombardment techniques

International Nuclear Information System (INIS)

Lilen, H.

1976-01-01

Neutron and electron bombardment techniques for materials doping, newly introduced in the fabrication of power semiconductor components: diodes, transistors, thyristors, and triacs are briefly outlined. A neutron bombardment of high purity silicon results in a short-lived 31 Si isotope (from 30 Si) decaying into 31 P. The phosphorus with its five peripheral electrons induces a negative doping (N), and the neutron technique gives a homogeneous doping. Furthermore, silicon bombardment with 1 to 2MeV electrons induces micro-ruptures in the lattice, that act as recombination traps reducing carrier lifetimes. Consequently, gold diffusion techniques can be replaced by electron bombardment with a gain in controlling carrier lifetimes [fr

The effect of oxygen ion beam bombardment on the properties of tin indium oxide/polyethylene terephthalate complex

International Nuclear Information System (INIS)

Li, Li; Liu, Honglin; Zou, Lin; Ding, Wanyu; Ju, Dongying; Chai, Weiping

2013-01-01

The tin indium oxide (ITO) films were deposited onto the polyethylene terephthalate (PET) surface that has been bombarded by an O ion beam. The variation of the O bombardment time resulted in the production of ITO/PET complex with different properties. Characterization by four-point probe measurement after the bending fatigue test showed that the adhesion property of the ITO/PET complex could be improved by the increase of O bombardment time while little change of electrical resistivity was observed. Scanning electron microscopy results showed that after the bending fatigue test, the nano scale seams and micro scale trenches appeared at the surface of the ITO/PET complex. The former was only the cracks of ITO film, which has little influence on the continuity and electrical resistivity of ITO film. On the contrary, the micro scale trenches were caused by the peeling off of ITO chips at the cracks, which mainly influenced the continuity and electrical resistivity of ITO film. With the increase of O bombardment time, the number and length of the micro scale trenches decreased. X-ray photoelectron spectrometry characterization showed that with the increase of O bombardment time, parts of the methylene C bonds were transformed into C=O bonds, which could be broken to form C-O-In(Sn) bonds at the initial stage of ITO film growth. By these C-O-In(Sn) crosslink bonds, the ITO film could adhere well onto the PET and the ITO/PET complex display better anti-bending fatigue property. Finally, in the context of the application of the ITO/PET complex as a flexible electrode substrate, the present work reveals a simple way to crosslink them, as well as the physicochemical mechanism happening at the interface of complex. - Highlights: • Polyethylene terephthalate (PET) surface was bombarded by N ions. • Tin indium oxide (ITO) film was deposited on bombarded PET surface. • By bombardment, methylene C bond on PET surface was broken and replaced by C=O bond. • C=O bond was

The effect of oxygen ion beam bombardment on the properties of tin indium oxide/polyethylene terephthalate complex

Energy Technology Data Exchange (ETDEWEB)

Li, Li; Liu, Honglin; Zou, Lin [School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028 (China); Ding, Wanyu, E-mail: dwysd_2000@163.com [School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028 (China); Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116028 (China); Ju, Dongying [Department of Material Science and Engineering, Saitama Institute of Technology, Fukaya 369-0293 (Japan); Chai, Weiping [School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028 (China)

2013-10-31

The tin indium oxide (ITO) films were deposited onto the polyethylene terephthalate (PET) surface that has been bombarded by an O ion beam. The variation of the O bombardment time resulted in the production of ITO/PET complex with different properties. Characterization by four-point probe measurement after the bending fatigue test showed that the adhesion property of the ITO/PET complex could be improved by the increase of O bombardment time while little change of electrical resistivity was observed. Scanning electron microscopy results showed that after the bending fatigue test, the nano scale seams and micro scale trenches appeared at the surface of the ITO/PET complex. The former was only the cracks of ITO film, which has little influence on the continuity and electrical resistivity of ITO film. On the contrary, the micro scale trenches were caused by the peeling off of ITO chips at the cracks, which mainly influenced the continuity and electrical resistivity of ITO film. With the increase of O bombardment time, the number and length of the micro scale trenches decreased. X-ray photoelectron spectrometry characterization showed that with the increase of O bombardment time, parts of the methylene C bonds were transformed into C=O bonds, which could be broken to form C-O-In(Sn) bonds at the initial stage of ITO film growth. By these C-O-In(Sn) crosslink bonds, the ITO film could adhere well onto the PET and the ITO/PET complex display better anti-bending fatigue property. Finally, in the context of the application of the ITO/PET complex as a flexible electrode substrate, the present work reveals a simple way to crosslink them, as well as the physicochemical mechanism happening at the interface of complex. - Highlights: • Polyethylene terephthalate (PET) surface was bombarded by N ions. • Tin indium oxide (ITO) film was deposited on bombarded PET surface. • By bombardment, methylene C bond on PET surface was broken and replaced by C=O bond. • C=O bond was

Anomalous heat evolution of deuteron implanted Al on electron bombardment

International Nuclear Information System (INIS)

Kamada, K.; Kinoshita, H.; Takahashi, H.

1994-05-01

Anomalous heat evolution was observed in deuteron implanted Al foils on 175 keV electron bombardment. Local regions with linear dimension of several 100nm showed simultaneous transformation from single crystalline to polycrystalline structure instantaneously on the electron bombardment, indicating the temperature rise up to more than melting point of Al from room temperature. The amount of energy evolved was more than 180 MeV for each transformed region. The transformation was never observed in proton implanted Al foils. The heat evolution was considered due to a nuclear reaction in D 2 molecular collections. (author)

Influence of ion bombardment induced patterning of exchange bias in pinned artificial ferrimagnets on the interlayer exchange coupling

Energy Technology Data Exchange (ETDEWEB)

Schmalhorst, Jan; Reiss, Guenter; Hoenik, V. [Thin Films and Nanostructures, Department of Physics, Univ. Bielefeld (Germany); Weis, Tanja; Engel, Dieter; Ehresmann, Arno [Institute of Physics and Center for Interdisciplinary Nanostructure Science and Technology, Kassel Univ. (Germany)

2007-07-01

Artificial ferrimagnets (AFi) have many applications as, e.g., pinned reference electrodes in magnetic tunnel junctions. It is known that the application of ion bombardment induced magnetic patterning with He ions on a single layer reference electrode of magnetic tunnel junctions is possible. For some applications a combination of ion bombardment induced magnetic patterning and artificial ferrimagnets as a reference electrode is desirable. The effect of ion bombardment induced magnetic patterning on pinned artificial ferrimagnets with a Ru interlayer which is frequently used in magnetic tunnel junctions as well as pinned AFis with a Cu interlayer has been tested. Special attention has been given to the question whether the antiferromagnetic interlayer exchange coupling can withstand the ion dose necessary to turn the exchange bias.

Angular dependence of secondary ion emission from silicon bombarded with inert gas ions

International Nuclear Information System (INIS)

Wittmaack, K.

1984-01-01

The emission of positive and negative, atomic and molecular secondary ions sputtered from silicon has been studied under ultrahigh vacuum conditions. The sample was bombarded with 2-12 keV Ar + and Xe + ions at angles of incidence between 0 0 and 60 0 to the surface normal. The angular dependence of the secondary ion intensity as well as the energy spectra of Si + and Si - were found to differ significantly. The effect is attributed mostly do differences in the rate of neutralization. The stability of molecular ions appears to be independent of the charge state. Supporting evidence is provided for the idea that multiply charged secondary ions are due to Auger de-excitation of sputtered atoms in vacuum. (orig.)

The effects of argon ion bombardment on the corrosion resistance of tantalum

Science.gov (United States)

Ramezani, A. H.; Sari, A. H.; Shokouhy, A.

2017-02-01

Application of ion beam has been widely used as a surface modification method to improve surface properties. This paper investigates the effect of argon ion implantation on surface structure as well as resistance against tantalum corrosion. In this experiment, argon ions with energy of 30 keV and in doses of 1 × 1017-10 × 1017 ions/cm2 were used. The surface bombardment with inert gases mainly produces modified topography and morphology of the surface. Atomic Force Microscopy was also used to patterned the roughness variations prior to and after the implantation phase. Additionally, the corrosion investigation apparatus wear was applied to compare resistance against tantalum corrosion both before and after ion implantation. The results show that argon ion implantation has a substantial impact on increasing resistance against tantalum corrosion. After the corrosion test, scanning electron microscopy (SEM) analyzed the samples' surface morphologies. In addition, the elemental composition is characterized by energy-dispersive X-ray (EDX) analysis. The purpose of this paper was to obtain the perfect condition for the formation of tantalum corrosion resistance. In order to evaluate the effect of the ion implantation on the corrosion behavior, potentiodynamic tests were performed. The results show that the corrosion resistance of the samples strongly depends on the implantation doses.

Successive ionization of positive ions of carbon and nitrogen by electron bombardment

International Nuclear Information System (INIS)

Donets, E.D.; Ilyushchenko, V.I.

Experimental studies of deep ionization of heavy ions are described. The applications of such studies in atomic physics, plasma physics and space physics are discussed. Investigations using intersecting ion-electron beams, shifted beams and ion trap sources are described, and data are presented for multi-charged ions of carbon, oxygen and nitrogen. A detailed description of the development of the IEL (electron beam ionizer) source, and the KRION (cryogenic version) source is given, and further data for the multiple ionization of carbon and nitrogen are given for charge states up to C 6+ and N 7+ . The advantages and disadvantages of the KRION source are discussed, and preliminary studies of a new torroidal ion trap source (HIRAC) are presented. (11 figs, 57 refs) (U.S.)

A model for the build-up of disordered material in ion bombarded Si

International Nuclear Information System (INIS)

Nelson, R.S.

1977-01-01

A new model based on experimental observation is developed for the build-up of disordered material in ion bombarded silicon. The model assumes that disordered zones are created in a background of migrating point defects, these zones then act as neutral sinks for such defects which interact with the zones and cause recrystallization. A simple steady state rate theory is developed to describe the build-up of disordered material with ion dose as a function of temperature. In general the theory predicts two distinct behaviour patterns depending on the temperature and the ion mass, namely a linear build-up with dose to complete disorder for heavy bombarding ions and a build-up to saturation at a relatively low level for light ions such as protons. However, in some special circumstances a transition region is predicted where the build-up of disorder approximately follows a (dose)sup(1/2) relationship before reverting to a linear behaviour at high dose. (author)

On the modification of metal/ceramic interfaces by low energy ion/atom bombardment during film growth

International Nuclear Information System (INIS)

Rigsbee, J.M.; Scott, P.A.; Knipe, R.K.; Hock, V.F.

1986-01-01

Elemental Cu and Ti films have been deposited onto ceramic substrates with a plasma-aided physical vapor deposition (ion-plating) process. This paper discusses how the structure and chemistry of the metallic film and the metal/ceramic interface are modified by low energy ion and neutral atom bombardment. Emphasis is placed on determining how low energy ion/neutral atom bombardment affects the strength of the metal/ceramic interface. Analyses of the film, interface and substrate regions have employed scanning Auger microprobe, secondary ion mass spectroscopy, SEM/STEM-energy dispersive X-ray and TEM/STEM imaging and microdiffraction techniques. (Auth.)

Study on the growth of aligned carbon nanotubes controlled by ion bombardment

International Nuclear Information System (INIS)

Wang Biben; Zhang Bing; Zheng Kun; Hao Wei; Wang Wanlu; Liao Kejun

2004-01-01

Aligned carbon nanotubes were prepared by plasma-enhanced hot filament chemical vapor deposition using CH 4 , H 2 and NH 3 as reaction gases. It was investigated how different negative bias affects the growth of aligned carbon nanotubes. The results indicate that the average diameter of the aligned carbon nanotubes is reduced and the average length of the aligned carbon nanotubes is increased with increasing negative bias. Because of the occurrence of glow discharge, a cathode sheath forms near the substrate surface, and a number of ions are produced in it, and a very strong electrical field builds up near the substrate surface. Under the effect of the field, the strong bombardment of ions on the substrate surface will influence the growth of aligned carbon nanotubes. Combined with related theories, authors have analyzed and discussed the ion bombardment effects on the growth of the aligned carbon nanotudes

Structural changes IN THE Kh20N45M4B nickel alloys and THE Kh16N15M3B steel due to helium ion bombardment

International Nuclear Information System (INIS)

Kalin, B.A.; Chernikov, U.N.; Chernov, I.I.; Kozhevnikov, O.A.; Shishkin, G.N.; Yakushin, V.L.

1986-01-01

Using transmission electron microscopy, x-ray structural analysis, and the thermal desorption techniques, the authors carried out a detailed study of the structural and phase changes, defect formation, and helium accumulation in the He + -bombarded 16-15 austenitic steels and 20-45 nickel alloys. Microstructure of the bombarded specimens was studied using the methods of transmission electron microscopy of thin foils in the EVM-100, and EM-301G electron microscopes. Results of x-ray studies on the bombarded specimens are presented. The conducted studies show that bombardment of structural materials with light ions can lead to significant structural damages and changes in the chemical and phase composition of the surface layer. The possible mechanisms of the changes in the chemical and phase composition include selective sputtering and radiation-induced accelerated diffusion of elements in the field of internal lateral stresses developing during the He + implantation process

Films deposited from reactive sputtering of aluminum acetylacetonate under low energy ion bombardment

Energy Technology Data Exchange (ETDEWEB)

Battaglin, Felipe Augusto Darriba; Prado, Eduardo Silva; Cruz, Nilson Cristino da; Rangel, Elidiane Cipriano, E-mail: elidiane@sorocaba.unesp.br [Universidade Estadual Paulista Julio de Mesquita Filho (UNESP), Sorocaba, SP (Brazil). Lab. de Plasmas Tecnologicos; Caseli, Luciano [Universidade Federal de Sao Paulo (UNIFESP), Diadema, SP (Brazil). Instituto de Ciencias Ambientais, Quimicas e Farmaceuticas; Silva, Tiago Fiorini da; Tabacniks, Manfredo Harri [Universidade de Sao Paulo (USP), SP (Brazil). Instituto de Fisica

2017-07-15

Films were deposited from aluminum acetylacetonate (Al(acac)3 ) using a methodology involving reactive sputtering and low energy ion bombardment. The plasma was generated by the application of radiofrequency power to the powder containing electrode and simultaneously, negative pulses were supplied to the electrode where the substrates were attached. It was investigated the effect of the duty cycle of the pulses (Δ) on the properties of the coatings. Association of ion bombardment to the deposition process increased film thickness, structure reticulation and organic content. Ions from the deposition environment were implanted at the film-air interface or underneath it. Morphology and topography were altered depending on Δ. Considering the enhancement of Δ, it affected the flux of ions reaching the depositing interface and then the deposition rate, H content, crosslinking degree and surface microstructure. Alumina groups were detected in the infrared spectra, whereas the precipitation of amorphous alumina was confirmed by X-ray diffraction. (author)

Angular and energy dependence of ion bombardment of Mo/Si multilayers

DEFF Research Database (Denmark)

Voorma, H.J.; Louis, E.; Bijkerk, F.

1997-01-01

The process of ion bombardment is investigated for the fabrication of Mo/Si multilayer x-ray mirrors using e-beam evaporation. The ion treatment is applied immediately after deposition of each of the Si layers to smoothen the layers by removing an additional thickness of the Si layer. In this stu......, the angular dependence of the etch yield, obtained from the in situ reflectivity measurements, is investigated in order o determine the optimal ion beam parameters for the production of multilayer mirrors on curved substrates....

Development and evolution of biaxial texture of rolled nickel tapes by ion beam bombardment for high Tc coated conductors

International Nuclear Information System (INIS)

Wang, S.S.; Wu, K.; Shi, K.; Liu, Q.; Han, Z.

2004-01-01

High quality YBa 2 Cu 3 O 7-x films on metallic substrates with high critical current densities well over 10 6 A/cm 2 can be prepared by the rolling assisted biaxially textured substrates (RABiTS) method. Nickel or its alloys have been used as biaxially textured substrates formed through a specific rolling and high temperature annealing procedures. In this paper, we report a newly developed process for developing biaxial texture in rolled Ni tape by argon ion beam bombardment. It is named the ion-beam structure modification (ISM) process. In the ISM processed Ni foils, X-ray diffraction ω scans showed the full width-half maximum (FWHM) value of the (2 0 0) peak was 5.7 deg. . And the electron back scattering diffraction (EBSP) analysis based on scanning electron microscopy showed good {1 0 0} cubic orientation and the mean grain size was determined as about 25 μm. The texture evolution of rolled Ni foils during ISM process is reported also. For ISM process, local temperature elevation and distribution arises from the ion bombardment, coupled with anisotropic incident ion penetration and propagation as a result of channeling effects in the metal lattice, are expected to play the major roles in the development of grain reorientation in the Ni foil. Due to the simplicity and efficiency of the ISM process, the technique shows a great promise for application in the industrial scale production of long-lengths of superconductor tapes

Large area smoothing of surfaces by ion bombardment: fundamentals and applications

International Nuclear Information System (INIS)

Frost, F; Fechner, R; Ziberi, B; Voellner, J; Flamm, D; Schindler, A

2009-01-01

Ion beam erosion can be used as a process for achieving surface smoothing at microscopic length scales and for the preparation of ultrasmooth surfaces, as an alternative to nanostructuring of various surfaces via self-organization. This requires that in the evolution of the surface topography different relaxation mechanisms dominate over the roughening, and smoothing of initially rough surfaces can occur. This contribution focuses on the basic mechanisms as well as potential applications of surface smoothing using low energy ion beams. In the first part, the fundamentals for the smoothing of III/V semiconductors, Si and quartz glass surfaces using low energy ion beams (ion energy: ≤2000 eV) are reviewed using examples. The topography evolution of these surfaces with respect to different process parameters (ion energy, ion incidence angle, erosion time, sample rotation) has been investigated. On the basis of the time evolution of different roughness parameters, the relevant surface relaxation mechanisms responsible for surface smoothing are discussed. In this context, physical constraints as regards the effectiveness of surface smoothing by direct ion bombardment will also be addressed and furthermore ion beam assisted smoothing techniques are introduced. In the second application-orientated part, recent technological developments related to ion beam assisted smoothing of optically relevant surfaces are summarized. It will be demonstrated that smoothing by direct ion bombardment in combination with the use of sacrificial smoothing layers and the utilization of appropriate broad beam ion sources enables the polishing of various technologically important surfaces down to 0.1 nm root mean square roughness level, showing great promise for large area surface processing. Specific examples are given for ion beam smoothing of different optical surfaces, especially for substrates used for advanced optical applications (e.g., in x-ray optics and components for extreme

Effect of Ni +-ION bombardment on nickel and binary nickel alloys

Science.gov (United States)

Roarty, K. B.; Sprague, J. A.; Johnson, R. A.; Smidt, F. A.

1981-03-01

Pure nickel and four binary nickel alloys have been subjected to high energy Ni ion bombardment at 675, 625 and 525°C. After irradiation, each specimen was studied by transmission electron microscopy. The pure nickel control was found to swell appreciably (1 to 5%) and the Ni-Al and the Ni-Ti samples were found to swell at all temperatures, but to a lesser degree (0.01 to 0.35%). The Ni-Mo contained a significant density of voids only at 525° C, while swelling was suppressed at all temperatures in the Ni-Si alloy. The dislocation structure progressed from loops to tangles as temperature increased in all materials except the Ni-Ti, in which there was an absence of loops at all temperatures. Dislocation densities decreased as temperature increased in all samples. These results do not correlate well with the relative behavior of the same alloys observed after neutron irradiation at 455°C. The differences between these two sets of data appear to be caused by different mechanisms controlling void nucleation in ion and neutron irradiation of these alloys.

Ion bombardment and adsorption studies on ilmenite (FeTiO3) by X-ray photoelectron spectroscopy

International Nuclear Information System (INIS)

Schulze, P.D.

1983-01-01

The effects of 5 KeV argon and oxygen ion bombardment on FeTiO3 (ilmenite) at low temperatures have been studied using x-ray photoelectron spectroscopy (XPS). Also, using this same technique, the adsorption of O 2 , NO, N 2 O, and CO at 300 K and the adsorption of O 2 and D 2 O at 150K have been studied. Argon and oxygen ion bombardment of ilmenite have confirmed earlier studies on metal oxides that argon ions generally reduce the anion species while oxygen ions generally oxidize the anion species. The two iron states involved were Fe sup +2 and Fe sup O. The reduction of Ti sup +4 was not verified although a significant shift in the Ti(2p1,3) binding energies toward the metallic state was observed after oxygen ion bombardment at low temperatures. At temperatures above 150K, O 2 adsorbs dissociatively on ilmenite while D 2 O adsorbs molecularly below 170K. Above 300 K NO, N 2 O, and CO do not appear to adsorb dissociatively. Low temperature adsorption of D 2 O was found to be inhibited by predosing the ilmenite with O 2

Ion bombardment and adsorption studies on ilmenite (FeTiO3) by X-ray photoelectron spectroscopy

Science.gov (United States)

Schulze, P. D.

1983-01-01

The effects of 5 KeV argon and oxygen ion bombardment on FeTiO3 (ilmenite) at low temperatures have been studied using X-ray photoelectron spectroscopy (XPS). Also, using this same technique, the adsorption of O2, NO, N2O, and CO at 300 K and the adsorption of O2 and D2O at 150K have been studied. Argon and oxygen ion bombardment of ilmenite have confirmed earlier studies on metal oxides that argon ions generally reduce the anion species while oxygen ions generally oxidize the anion species. The two iron states involved were Fe sup +2 and Fe sup O. The reduction of Ti sup +4 was not verified although a significant shift in the Ti(2p1,3) binding energies toward the metallic state was observed after oxygen ion bombardment at low temperatures. At temperatures above 150K, O2 adsorbs dissociatively on ilmenite while D2O adsorbs molecularly below 170K. Above 300 K No, N2O, and CO do not appear to adsorb dissociatively. Low temperature adsorption of D2O was found to be inhibited by predosing the ilmenite with O2.

Low energy Ar ion bombardment damage of Si, GaAs, and InP surfaces

International Nuclear Information System (INIS)

Williams, R.S.

1982-01-01

Argon bombardment damage to (100) surfaces of Si, GaAs, and InP for sputter ion-gun potentials of 1, 2, and 3 kilovolts was studied using Rutherford backscattering. Initial damage rates and saturation damage levels were determined. Bombardment damage sensitivity increased for the sequence Si, GaAs, and InP. Saturation damage levels for Si and GaAs correspond reasonably to LSS projected range plus standard deviation estimates; damage to InP exceeded this level significantly. For an ion-gun potential of 3 keV, the initial sputter yield of P from an InP surface exceeded the sputter yield of In by four atoms per incident Ar projectile. (author)

Surface damage studies of ETFE polymer bombarded with low energy Si ions (≤100 keV)

International Nuclear Information System (INIS)

Minamisawa, Renato Amaral; Almeida, Adelaide De; Budak, Satilmis; Abidzina, Volha; Ila, Daryush

2007-01-01

Surface studies of ethylenetetrafluoroethylene (ETFE), bombarded with Si in a high-energy tandem Pelletron accelerator, have recently been reported. Si ion bombardment with a few MeV to a few hundred keV energies was shown to be sufficient to produce damage on ETFE film. We report here the use of a low energy implanter with Si ion energies lower than 100 keV, to induce changes on ETFE films. In order to determine the radiation damage, ETFE bombarded films were simulated with SRIM software and analyzed with optical absorption photometry (OAP), Raman and Fourier transform infrared-attenuated total reflectance (FTIR-ATR) spectroscopy to show quantitatively the physical and chemical property changes. Carbonization occurs following higher dose implantation, and hydroperoxides were formed following dehydroflorination of the polymer

Conical surface textures formed by ion bombarding 2% Be-Cu alloy

International Nuclear Information System (INIS)

Panitz, J.K.G.

1991-01-01

A homogeneous, micrometer-sized conical surface texture forms on 2% Be-Cu alloy which is bombarded with an argon beam produced by a Kaufman ion source. The dimensions of the features that form depend strongly on argon energy (from 250 to 1500 eV); argon fluence (10 19 to 10 20 ions cm -2 ); and argon flux (0.1 to 1 mA cm -2 ). The texture morphology depends less strongly on the background ambient (Mo versus graphite), earlier alloy heat treatments and the temperature during bombardment (100 o C and 450 o C). As the texture matures with increasing fluence, the number of large features increases at the expense of the number of small features. The observed relationship between texture formation and ion flux suggests that the evolution of these features is not adequately described by theories predicting that the mature conical side-wall angle is related to the angle of the maximum sputtering yield. These textured surfaces can be coated with other metals for a variety of possible applications including pulsed power Li + beam anodes; cold cathode field emission devices; optical absorbers and catalysis supports. (author)

Conical surface textures formed by ion bombarding 2% Be Cu alloy

International Nuclear Information System (INIS)

Panitz, J.K.G.

1990-01-01

A homogeneous, micrometer-sized conical surface texture forms on 2% Be-Cu alloy which is bombarded with an argon beam produced by a Kaufman ion source. The dimensions of the features that form strongly depend on: (1) argon energy (from 250 to 1500 eV), (2) fluence (10 19 to 10 20 ions/cm 2 ), and (3) flux (0.1 to 1 mA/cm 2 ). The texture morphology depends less strongly on the background ambient (Mo vs graphite), earlier alloy heat treatments and the temperature during bombardment (100 degree C and 450 degree C). As the texture matures with increasing fluence, the number of large features increases at the expense of the number of small features. The observed relationship between texture formation and ion flux suggests that the evolution of these features is not adequately described by theories predicting that the mature conical sidewall angle is related to the angle of the maximum sputtering yield. These textured surfaces can be coated with other metals for a variety of possible applications including: (1) pulsed power Li+ beam anodes, (2) cold cathode field emission devices, (3) optical absorbers and (4) catalysis supports. 18 refs., 5 figs

Auger emission from solid surfaces bombarded with ions

International Nuclear Information System (INIS)

Grizzi, Oscar.

1986-01-01

The Auger electron emission from Be, Na, Mg, Al and Si bombarded with 0,5-20 KeV noble gas ions is studied. Sharp structures of the Auger electron spectra of Na and Be were identified. A Monte Carlo program was adapted to simulate the colision cascade in the solid, inner shell excitations and Auger decays. From the comparision of experimental and simulated Auger intensities, the relative role of symmetric and asymmetric collisions in Be K- and Al L-shell excitation were evaluated. In the case of Be, the discussion of the exciting processes to higher projectile energies was extended. To this end, the simulation to early measurements of Be K X-ray yields was applied. From this analysis, information about the variations of the fluorescence yield and outer-shell occupation numbers of Be with projectile energy was obtained. The study of the shape of the sharp Auger structures and their dependence with the energy and incidence projectile angle gives information about the collisional processes, inner hole lifetimes and Auger decays. From the evaluation of the energy and angular distribution of the excited sputtered atoms and the interaction between them and the metallic-surface, the energy shift distributions in the Auger energies were obtained. From the comparison of these distributions with the experimental atomic peaks, the main causes of the broadening of these peaks were determined. (M.E.L.) [es

Materials surface modification by plasma bombardment under simultaneous erosion and redeposition conditions

International Nuclear Information System (INIS)

Hirooka, Y.; Goebel, D.M.; Conn, R.W.

1986-07-01

The first in-depth investigation of surface modification of materials by continuous, high-flux argon plasma bombardment under simultaneous erosion and redeposition conditions have been carried out for copper and 304 stainless steel using the PISCES facility. The plasma bombardment conditions are: incident ion flux range from 10 17 to 10 19 ions sec -1 cm -2 , total ion fluence is controlled between 10 19 and 10 22 ions cm -2 , electron temperature range from 5 to 15 eV, and plasma density range from 10 11 to 10 13 cm -3 . The incident ion energy is 100 eV. The sample temperature is between 300 and 700K. Under redeposition dominated conditions, the material erosion rate due to the plasma bombardment is significantly smaller (by a factor up to 10) than that can be expected from the classical ion beam sputtering yield data. It is found that surface morphologies of redeposited materials strongly depend on the plasma bombardment condition. The effect of impurities on surface morphology is elucidated in detail. First-order modelings are implemented to interpret the reduced erosion rate and the surface evolution. Also, fusion related surface properties of redeposited materials such as hydrogen reemission and plasma driven permeation have been characterized

Electron capture by highly charged low-velocity ions

International Nuclear Information System (INIS)

Cocke, C.L.; Dubois, R.; Justiniano, E.; Gray, T.J.; Can, C.

1982-01-01

This paper describes the use of a fast heavy ion beam to produce, by bombardment of gaseous targets, highly-charged low-velocity recoil ions, and the use of these secondary ions in turn as projectiles in studies of electron capture and ionization in low-energy collision systems. The interest in collisions involving low-energy highly-charged projectiles comes both from the somewhat simplifying aspects of the physics which attend the long-range capture and from applications to fusion plasmas, astrophysics and more speculative technology such as the production of X-ray lasers. The ions of interest in such applications should have both electronic excitation and center-of-mass energies in the keV range and cannot be produced by simply stripping fast heavy ion beams. Several novel types of ion source have been developed to produce low-energy highly-charged ions, of which the secondary ion recoil source discussed in this paper is one. (Auth.)

Ion-bombardment-induced reduction in vacancies and its enhanced effect on conductivity and reflectivity in hafnium nitride films

Energy Technology Data Exchange (ETDEWEB)

Gu, Zhiqing; Wang, Jiafu; Hu, Chaoquan; Zhang, Xiaobo; Dang, Jianchen; Gao, Jing; Zheng, Weitao [Jilin University, School of Materials Science and Engineering, Key Laboratory of Mobile Materials, MOE, and State Key Laboratory of Superhard Materials, Changchun (China); Zhang, Sam [Nanyang Technological University, School of Mechanical and Aerospace Engineering, Singapore (Singapore); Wang, Xiaoyi [Chinese Academy of Sciences, Key Laboratory of Optical System Advanced Manufacturing Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Changchun (China); Chen, Hong [Jilin University, Department of Control Science and Engineering, Changchun (China)

2016-08-15

Although the role of ion bombardment on electrical conductivity and optical reflectivity of transition metal nitrides films was reported previously, the results were controversial and the mechanism was not yet well explored. Here, we show that proper ion bombardment, induced by applying the negative bias voltage (V{sub b}), significantly improves the electrical conductivity and optical reflectivity in rocksalt hafnium nitride films regardless of level of stoichiometry (i.e., in both near-stoichiometric HfN{sub 1.04} and over-stoichiometric HfN{sub 1.17} films). The observed improvement arises from the increase in the concentration of free electrons and the relaxation time as a result of reduction in nitrogen and hafnium vacancies in the films. Furthermore, HfN{sub 1.17} films have always much lower electrical conductivity and infrared reflectance than HfN{sub 1.04} films for a given V{sub b}, owing to more hafnium vacancies because of larger composition deviation from HfN exact stoichiometry (N:Hf = 1:1). These new insights are supported by good agreement between experimental results and theoretical calculations. (orig.)

High-energy particle emission from galena and pyrite bombarded with Cs and O ions

International Nuclear Information System (INIS)

Karpuzov, D.S.; McIntyre, N.S.

2002-01-01

The ejection of energetic particles during steady-state ion surface bombardment has been investigated by means of a dynamic computer simulation as well as in a secondary ion mass spectrometry (SIMS)/low-energy ion scattering from surfaces (LEIS) experiment. The emphasis of this comparative study is on the mass dependence of high-energy tails in sputtering and backscattering for the bombardment of galena (PbS) and pyrite (FeS 2 ) with keV energy ion beam of cesium and oxygen. In the experiment, kinetic energy distributions of sputtered secondary ions (S + , Fe + , Pb + , S - ), as well as backscattered or re-sputtered primary ions (Cs + , O + , O - ), have been measured on a modified Cameca IMS-3f magnetic sector mass spectrometer for keV cesium (Cs + ) and oxygen (O 2 + , O - ) bombardment of galena and pyrite. Ejection of high-energy particles, with emission energies of up to ∼40% or up to ∼60% of the bombarding energy for sputtering of the lighter component (S ± ) with cesium or oxygen, respectively, and of up to ∼40% (Cs + ) and ∼80% (O ± ) for backscattering, has been observed for PbS. The computer simulations were based on the well-known MARLOWE code. In order to model the change of the stoichiometry of the binary compounds, dynamic modification of the target composition in the near-surface region was introduced. Cs incorporation was included, and a relative enrichment of the metallic component (Pb, Fe) in the top few layers due to preferential sputtering of sulfur was allowed. The computer simulations provide information on the formation of altered layer under sputter equilibrium as well as on the energy and angular emission distributions of sputtered and backscattered particles in steady-state conditions. Multiple scattering of Cs projectiles and dynamic re-sputtering of cesium that was previously incorporated in the altered near-surface region can be distinguished in the simulation, and matched with the experimental observations. In addition

Ion-bombardment effects on the fatigue life of stainless steel under simulated fusion first-wall conditions

International Nuclear Information System (INIS)

Kohse, G.E.

1983-02-01

An experiment which uses the MITR-II 5 MW research reactor to simulate several aspects of the anticipated environment of a fusion reactor first wall is described. Pressurized tube specimens are subjected simultaneously to stress and temperature cycling, surface bombardment by energetic helium and lithium ions and bulk irradiation by high-energy neutrons. Analysis of the samples is aimed primarily at determining the behavior of the ion bombarded surface layer, which has a depth of 2.5 μm, with particular reference to possible effects on the fatigue life of the material

The effects of thermal annealing on iron bombarded InP/InGaAs multilayer structures

International Nuclear Information System (INIS)

Subramaniam, S.C.; Rezazadeh, A.A.

2006-01-01

The effects of Fe-ion bombardment at 77 K (cold) and room temperature (RT) into single layer InGaAs, InP and multilayer InP/InGaAs HBT structures have been investigated. Annealing characteristics and RF dissipation loss measurements of Fe-ion bombarded samples at 77 K indicated good electrical isolation in n-, p-type InGaAs materials and InP/InGaAs HBT structures. Thermally stable (up to 250 deg. C) high sheet resistance (R sh ) of ∼5 x 10 6 Ω/sq has been achieved on these samples while higher R sh of ∼10 7 Ω/sq was obtained for the n-InP materials bombarded with similar conditions. Dissipation losses of 1.7 dB/cm at 10 GHz and 2.8 dB/cm at 40 GHz have been measured for the cold Fe-ion bombarded InP-based HBT structures. This result is similar to those obtained for an un-bombarded S.I. InP substrate, indicating good electrical isolation. We have also determined electron trapping levels by thermal annealing for the cold and RT Fe-ion bombarded samples. It is shown that the high resistivity achieved in the cold implanted InGaAs layer is most likely due to the creation of mid-bandgap defect levels (E C - 0.33) eV, which are created only in the cold Fe-ion bombardment. The DC isolation and RF dissipation loss analysis have been used to identify a suitable bombardment scheme for the fabrication of planar InP/InGaAs HBTs

Study of ion-bombardment-induced surface topography of silver by stereophotogrammetric method

International Nuclear Information System (INIS)

Fayazov, I.M.; Sokolov, V.N.

1992-01-01

The ion-bombardment-induced surface topography of polycrystalline silver was studied using the stereophotogrammetric method. The samples were irradiated with 30keV argon ions at fairly high fluences (> 10 17 ions/cm 2 ). The influence of the inclination angle of the sample in the SEM on the cone shape of a SEM-picture is discussed. To analyse the irradiated surfaces covered with cones, the SEM-stereotechnique is proposed. The measurements of the sample section perpendicular to the incidence plane are also carried out. (author)

Thermo-mechanical design aspects of mercury bombardment ion thrusters.

Science.gov (United States)

Schnelker, D. E.; Kami, S.

1972-01-01

The mechanical design criteria are presented as background considerations for solving problems associated with the thermomechanical design of mercury ion bombardment thrusters. Various analytical procedures are used to aid in the development of thruster subassemblies and components in the fields of heat transfer, vibration, and stress analysis. Examples of these techniques which provide computer solutions to predict and control stress levels encountered during launch and operation of thruster systems are discussed. Computer models of specific examples are presented.

Directional effect on coloration in LiF crystal by H{sup +} and H{sub 2}{sup +} ion bombardment

Energy Technology Data Exchange (ETDEWEB)

Mingle, Gan; Naramoto, Hiroshi; Aoki, Yasushi; Yamamoto, Shunya; Jianer, Zeng; Takeshita, Hidefumi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

1997-03-01

In the present paper, the first results are reported about the coloration in LiF crystals induced by bombardments of single hydrogen ions (H{sup +}) and molecular hydrogen ions (H{sub 2}{sup +}) with the same velocity under the <100> aligned and random conditions. For the single hydrogen ion irradiation, the coloration is rather simple. The F-type color center absorption under the <100> aligned condition becomes larger than that under the random condition with the dose increase because of larger fraction of electronic energy loss under channeling condition. On the contrary, the coloration for the molecular ions does not show big channeling effect. In the low dose region some difference can be seen but the difference of coloration is not observed any more with the dose increase. The pronounced coloration for molecular ions under the channeling condition is observed in comparison with that for single ions. (author)

Titanium oxidation-reduction at low oxygen pressure under electron bombardment

International Nuclear Information System (INIS)

Brasca, R.; Passeggi, M.C.G.; Ferron, J.

2006-01-01

The effect of the electron bombardment on the first stages of the titanium oxidation process has been studied by means of Auger Electron Spectroscopy. Using Factor Analysis and the valence electron dependence behaviour of the titanium LMV Auger transition, we found that the process is strongly dependent on the oxygen pressure and electron current density. Depending on the irradiation conditions, films of different thickness and Ti oxidized states are obtained

Immediate fabrication of flower-like graphene oxide by ion beam bombardment

International Nuclear Information System (INIS)

Cheng, Junjie; Zhang, Yuanyuan; Zhang, Guilong; Xiong, Shiquan; Pei, Renjun; Cai, Dongqing; Wu, Zhengyan

2015-01-01

Graphical abstract: - Highlights: • Ion beam bombardment (IBB) could modify the microstructure of graphene oxide (GO). • IBB could transform a compact multi-layered GO to a few-layered flower-like GO. • IBB could effectively improve the dispersion and the related properties of GO. • The main mechanism was proposed to be the etching and charge effects of IBB. - Abstract: An effective and convenient method using ion beam bombardment (IBB) for separating a multi-layered compact graphene oxide (GO) piece into several small few-layered loose pieces was developed, and it was found that those small GO pieces had formed a flower-like structure. Therein, the main mechanism was proposed to be the etching and charge effects of IBB. This work could provide a facile and promising approach for improving the dispersion and the related properties of GO. Furthermore, X-ray diffraction and Raman spectrum determinations demonstrated that, with the increasing fluence, IBB could effectively decrease the chemical groups in the layers of GO, resulting in the decrease of the layer distance.

Immediate fabrication of flower-like graphene oxide by ion beam bombardment

Energy Technology Data Exchange (ETDEWEB)

Cheng, Junjie [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences and Anhui Province, Hefei, Anhui 230031 (China); Division of Nanobiomedicine, Key Laboratory for Nano-Bio Interface Research, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Zhang, Yuanyuan; Zhang, Guilong [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences and Anhui Province, Hefei, Anhui 230031 (China); University of Science and Technology of China, Hefei 230026 (China); Xiong, Shiquan [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences and Anhui Province, Hefei, Anhui 230031 (China); Pei, Renjun, E-mail: rjpei2011@sinano.ac.cn [Division of Nanobiomedicine, Key Laboratory for Nano-Bio Interface Research, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Cai, Dongqing, E-mail: dqcai@ipp.ac.cn [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences and Anhui Province, Hefei, Anhui 230031 (China); Wu, Zhengyan, E-mail: zywu@ipp.ac.cn [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences and Anhui Province, Hefei, Anhui 230031 (China)

2015-12-01

Graphical abstract: - Highlights: • Ion beam bombardment (IBB) could modify the microstructure of graphene oxide (GO). • IBB could transform a compact multi-layered GO to a few-layered flower-like GO. • IBB could effectively improve the dispersion and the related properties of GO. • The main mechanism was proposed to be the etching and charge effects of IBB. - Abstract: An effective and convenient method using ion beam bombardment (IBB) for separating a multi-layered compact graphene oxide (GO) piece into several small few-layered loose pieces was developed, and it was found that those small GO pieces had formed a flower-like structure. Therein, the main mechanism was proposed to be the etching and charge effects of IBB. This work could provide a facile and promising approach for improving the dispersion and the related properties of GO. Furthermore, X-ray diffraction and Raman spectrum determinations demonstrated that, with the increasing fluence, IBB could effectively decrease the chemical groups in the layers of GO, resulting in the decrease of the layer distance.

Secondary ion yield changes in Si and GaAs due to topography changes during O+2 or Cs+ ion bombardment

International Nuclear Information System (INIS)

Stevie, F.A.; Kahora, P.M.; Simons, D.S.; Chi, P.

1988-01-01

Changes in secondary ion yields of matrix and dopant species have been correlated with changes in surface topography during O + 2 bombardment of Si and GaAs. In Si, profiles were measured in (100) wafers at 6- and 8-keV impact energy. At 6 keV, a yield increase of about 70% occurred for Si + over a depth range of 2.5 to 3.5 μm, with changes in other species ranging from a decrease of ∼20% for Si + 3 to an increase of more than 25% for O + . The development of a rippled surface topography was observed in scanning electron micrographs over the same depth range. Similar effects occurred over a 3--5 μm depth range for 8-keV ions, and in (111) silicon at a depth of 3 to 4 μm for 6-keV ions. No differences were noted between p- and n-type silicon, or implanted and unimplanted silicon. In GaAs, profiles were measured in (100) wafers at 2.5-, 5.5-, and 8-keV impact energies. At 8 keV, a yield increase of about 70% was found for GaO + in the range 0.6--1.0 μm, with smaller changes for other matrix species. At 5.5 keV, similar effects were observed, but over a depth interval of 0.3 to 0.7 μm. No yield changes were detected at 2.5-keV impact energy. The yield changes at the higher energies were again correlated with the onset of changes in topography. No change in ion yield or surface topography was noted for Cs + bombardment of Si or GaAs. The topography and ion yield changes are affected by the angle of incidence and, for Si, the oxygen coverage. The results show that the practice of normalizing secondary ion mass spectrometry dopant profiles to a matrix signal must be modified for situations where matrix yield changes occur

Phenomenology of the plastic flow of amorphous solids induced by heavy-ion bombardment

International Nuclear Information System (INIS)

Klaumuenzer, S.; Benyagoub, A.

1991-01-01

Amorphous solids exhibit at temperatures far below the glass transition plastic flow when bombarded with fast heavy ions (kinetic energy ∼1 MeV/u). The dimensions perpendicular to the ion beam grow whereas the sample dimension parallel to the ion beam shrinks. The strain tensor describing phenomenologically these dimensional changes is derived from symmetry considerations and compared with experiment. Particular attention is devoted to angular changes, which have not been discussed in this context so far

X-ray diffraction study of stress relaxation in cubic boron nitride films grown with simultaneous medium-energy ion bombardment

International Nuclear Information System (INIS)

Abendroth, B.; Gago, R.; Eichhorn, F.; Moeller, W.

2004-01-01

Relaxation of the intrinsic stress of cubic boron nitride (cBN) thin films has been studied by x-ray diffraction (XRD) using synchrotron light. The stress relaxation has been attained by simultaneous medium-energy ion bombardment (2-10 keV) during magnetron sputter deposition, and was confirmed macroscopically by substrate curvature measurements. In order to investigate the stress-release mechanisms, XRD measurements were performed in in-plane and out-of-plane geometry. The analysis shows a pronounced biaxial state of compressive stress in the cBN films grown without medium-energy ion bombardment. This stress is partially released during the medium-energy ion bombardment. It is suggested that the main path for stress relaxation is the elimination of strain within the cBN grains due to annealing of interstitials

Charge-state correlated cross sections for the production of low-velocity highly charged Ne ions by heavy-ion bombardment

International Nuclear Information System (INIS)

Gray, T.J.; Cocke, C.L.; Justiniano, E.

1980-01-01

We report measured cross sections for the collisional production of highly charged low-velocity Ne recoil ions resulting from the bombardment of a thin Ne gas target by highly charged 1-MeV/amu C, N, O, and F projectiles. The measurements were made using time-of-flight techniques which allowed the simultaneous identification of the final charge state of both the low-velocity recoil ion and the high-velocity projectile for each collision event. For a given incident-projectile charge state, the recoil charge-state distribution is very dependent upon the final charge state of the projectile. Single- and double-electron capture events by incident bare nuclei and projectile K-shell ionization during the collision cause large shifts in the recoil charge-state distributions toward higher charge states. A previously proposed energy-deposition model is modified to include the effects of projectile charge-changing collisions during the collision for bare and hydrogenlike projectiles and is used to discuss the present experimental results

The interpretation of ellipsometric measurements of ion bombardment of noble gases on semiconductor surfaces

NARCIS (Netherlands)

Holtslag, A.H.M.; Slager, U.C.; van Silfhout, Arend

1985-01-01

Low energy noble gas ion bombardment and thermal desorption studies were carried out on Si(111) and analysed, in situ, using spectroscopic ellipsometry. The amorphous layer thickness and implanted noble gas fraction were calculated.

Electron cyclotron resonance (E.C.R.) multiply charged ion sources

International Nuclear Information System (INIS)

Geller, R.

1978-01-01

High charge state ions can be produced by electron bombardment inside targets when the target electron density n (cm -3 ) multiplied by the ion transit time through the target tau (sec) is: n tau > 5.10 9 cm -3 sec. The relative velocity between electrons and ions determines the balance between stripping and capture i.e. the final ion charge state. (In a stripper foil fast ions interact with slow electrons involving typically n approximately 10 24 cm -3 , tau approximately 10 -14 sec). In the E.C.R. source a cold ion plasma created in a first stage diffuses slowly through a second stage containing a hot E.C.R. plasma with n > 3.10 11 cm -3 and tau > 10 -2 sec. Continuous beams of several μA of C 6+ N 7+ Ne 9+ A 11+ are extracted from the second stage with normalized emittances of approximately 0.5 π mm mrad. The absence of cathodes and plasma arcs makes the source very robust, reliable and well-fitted for cyclotron injection. A super conducting source is under development

Influence of substrate pre-treatments by Xe{sup +} ion bombardment and plasma nitriding on the behavior of TiN coatings deposited by plasma reactive sputtering on 100Cr6 steel

Energy Technology Data Exchange (ETDEWEB)

Vales, S., E-mail: sandra.vales@usp.br [Universidade de São Paulo (USP), Escola de Engenharia de São Carlos, Av. Trabalhador São Carlense 400, São Carlos, SP CEP 13566-590 (Brazil); Brito, P., E-mail: ppbrito@gmail.com [Pontifícia Universidade Católica de Minas Gerais (PUC-MG), Av. Dom José Gaspar 500, 30535-901 Belo Horizonte, MG (Brazil); Pineda, F.A.G., E-mail: pipe8219@gmail.com [Universidade de São Paulo (USP), Escola de Engenharia de São Carlos, Av. Trabalhador São Carlense 400, São Carlos, SP CEP 13566-590 (Brazil); Ochoa, E.A., E-mail: abigail_ochoa@hotmail.com [Universidade Estadual de Campinas (UNICAMP), Campus Universitário Zeferino Vaz, Barão Geraldo, Campinas, SP CEP 13083-970 (Brazil); Droppa, R., E-mail: roosevelt.droppa@ufabc.edu.br [Universidade Federal do ABC (UFABC), Av. dos Estados, 5001, Santo André, SP CEP 09210-580 (Brazil); Garcia, J., E-mail: jose.garcia@sandvik.com [Sandvik Coromant R& D, Lerkrogsvägen 19, SE-12680, Stockholm (Sweden); Morales, M., E-mail: monieriz@gmail.com [Universidade Estadual de Campinas (UNICAMP), Campus Universitário Zeferino Vaz, Barão Geraldo, Campinas, SP CEP 13083-970 (Brazil); Alvarez, F., E-mail: alvarez@ifi.unicamp.br [Universidade Estadual de Campinas (UNICAMP), Campus Universitário Zeferino Vaz, Barão Geraldo, Campinas, SP CEP 13083-970 (Brazil); and others

2016-07-01

In this paper the influence of pre-treating a 100Cr6 steel surface by Xe{sup +} ion bombardment and plasma nitriding at low temperature (380 °C) on the roughness, wear resistance and residual stresses of thin TiN coatings deposited by reactive IBAD was investigated. The Xe{sup +} ion bombardment was carried out using a 1.0 keV kinetic energy by a broad ion beam assistance deposition (IBAD, Kaufman cell). The results showed that in the studied experimental conditions the ion bombardment intensifies nitrogen diffusion by creating lattice imperfections, stress, and increasing roughness. In case of the combined pre-treatment with Xe{sup +} ion bombardment and subsequent plasma nitriding, the samples evolved relatively high average roughness and the wear volume increased in comparison to the substrates exposed to only nitriding or ion bombardment. - Highlights: • Effect of Xe ion bombardment and plasma nitriding on TiN coatings was investigated. • Xe ion bombardment with 1.0 KeV increases nitrogen retention in plasma nitriding. • 1.0 KeV ion impact energy causes sputtering, thus increasing surface roughness. • TiN coating wear is minimum after plasma nitriding due to lowest roughness.

Defect production and annihilation in metals through electronic excitation by energetic heavy ion bombardment

Energy Technology Data Exchange (ETDEWEB)

Iwase, Akihiro [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment

1997-03-01

Defect production, radiation annealing and defect recovery are studied in Ni and Cu irradiated with low-energy ({approx}1-MeV) and high-energy ({approx}100-MeV) ions. Irradiation of Ni with {approx}100-MeV ions causes an anomalous reduction, or even a complete disappearance of the stage-I recovery. This result shows that the energy transferred from excited electrons to lattice atoms through the electron-lattice interaction contributes to the annihilation of the stage-I interstitials. This effect is also observed in Ni as a large radiation annealing during 100-MeV heavy ion irradiation. On the other hand, in Cu thin foils, we find the defect production process strongly associated with electron excitation, where the defect production cross section is nearly proportional to S{sub e}{sup 2}. (author)

Low-energy ion bombardment to tailor the interfacial and mechanical properties of polycrystalline 3C-silicon carbide

International Nuclear Information System (INIS)

Liu Fang; Li, Carolina H.; Pisano, Albert P.; Carraro, Carlo; Maboudian, Roya

2010-01-01

Low-energy Ar + ion bombardment of polycrystalline 3C-silicon carbide (poly-SiC) films is found to be a promising surface modification method to tailor the mechanical and interfacial properties of poly-SiC. The film average stress decreases as the ion energy and the bombardment time increase. Furthermore, this treatment is found to change the strain gradient of the films from positive to negative values. The observed changes in stress and strain gradient are explained by ion peening and thermal spikes models. In addition, the poly-SiC films show a significant enhancement in corrosion resistance by this treatment, which is attributed to a reduction in surface energy and to an increase in the compressive stress in the near-surface region.

Proposals for the heating mechanism of an electron-bombarded body

International Nuclear Information System (INIS)

Geller, R.; Yerouchalmi, F.

1967-01-01

When a thermally isolated target in vacuum is bombarded by an electron beam the target becomes red. In this paper we try a heuristic explanation indicating how the kinetic power of the beam may be transformed into radiation power controlled by Stefan law. (authors) [fr

A compact CMA spectrometer with axially integrated hybrid electron-ion gun for ISS, AES and sputter depth profile analysis

International Nuclear Information System (INIS)

Gisler, E.; Bas, E.B.

1986-01-01

Until now, the combined application of electrons and ions in surface analysis required two separate sources for electrons and ions with different incidence angles. The newly developed hybrid electron-ion gun, however, allows bombardment of the same sample area both with noble gas ions and with electrons coming from the same direction. By integrating such a hybrid gun axially in a cylindrical mirror energy analyser (CMA) a sensitive compact single flange spectrometer obtains for ion scattering spectroscopy (ISS), Auger electron spectroscopy (AES), and sputtering all within normal beam incidence. This concept makes accurate beam centering very easy. Additionally, the bombardment from the same direction both for sputtering and for surface analysis brings advantages in depth profiling. The scattering angle for ISS has a constant value of about 138 0 . The hybrid gun delivers typically an electron beam current of -20μA at 3keV for AES, and an ion beam current of +40 nA and +1.2μA at 2 keV for ISS and sputtering respectively. The switching time between ISS, AES, and sputtering mode is about 0.1 s. So this system is best suited for automatically controlled depth profile analysis. The design and operation of this new system will be described and some applications will be discussed. (author)

Facies of ion bombarded surfaces of brittle materials

International Nuclear Information System (INIS)

Primak, W.

1975-12-01

Materials were bombarded by protons, deuterons, and helium ions. The materials investigated were quartz; glasses; carbides and borides (SiC, B 4 C, TiB 2 ); oxides and nitrides (magnorite, sapphire, spinel, Al 2 O 3 , Si 3 N 4 , ZrO 2 , BaTiO 3 ); and miscellaneous (graphite, LiNbO 3 , copper). Oberservations were of growth, reflectivity, blistering, surface ablation, and swelling. Calculations were made of the effects of a layer, of its gradual transformation, and of the introduction of a gas. It is concluded that: Radiation blistering is not a primary process. Observations of blister formation and exfoliation cannot be used to calculate the surface ablation rate. The primary process is the development of a microporous layer which causes swelling. Visible blisters are caused by fracturing by transverse stresses in this layer and may occur during the bombardment, or in some cases, much later, in storage. There is no evidence of extreme gas pressures in the blisters. When blisters develop, they may be stable under continued bombardment for a dose many times that at which they formed. The swelling is a better index of the effects than is the blistering, and must be associated in most cases with permeability to the gas. Behavior with protons and deuterons is similar, with helium different. All but quartz, vitreous silica, and Pyrex are impervious to hydrogen and deuterium; only dense barium crown glass, carbides, borides, oxides, and nitrides are impervious to helium. Quartz shows swelling caused by conversion to a vitreous product of much lower density but no porosity, while for the others, most of the swelling and surface growth is caused by porosity. Surface ablation by the blistering process may be reduced by initial porosity or by initial or subsequent surface fissuring. However, for impervious materials, surface damage by the introduction of porosity would continue

Systematic analysis of neutron yields from thick targets bombarded by heavy ions and protons with moving source model

Energy Technology Data Exchange (ETDEWEB)

Kato, Takashi; Kurosawa, Tadahiro; Nakamura, Takashi E-mail: nakamura@cyric.tohoku.ac.jp

2002-03-21

A simple phenomenological analysis using the moving source model has been performed on the neutron energy spectra produced by bombarding thick targets with high energy heavy ions which have been systematically measured at the Heavy-Ion Medical Accelerator (HIMAC) facility (located in Chiba, Japan) of the National Institute of Radiological Sciences (NIRS). For the bombardment of both heavy ions and protons in the energy region of 100-500 MeV per nucleon, the moving source model incorporating the knock-on process could be generally successful in reproducing the measured neutron spectra within a factor of two margin of accuracy. This phenomenological analytical equation is expressed having several parameters as functions of atomic number Z{sub p}, mass number A{sub p}, energy per nucleon E{sub p} for projectile, and atomic number Z{sub T}, mass number A{sub T} for target. By inputting these basic data for projectile and target into this equation we can easily estimate the secondary neutron energy spectra at an emission angle of 0-90 deg. for bombardment with heavy ions and protons in the aforementioned energy region. This method will be quite useful to estimate the neutron source term in the neutron shielding design of high energy proton and heavy ion accelerators.

Photon emission produced by Kr+ ions bombardment of Cr and Cr2O3 targets

International Nuclear Information System (INIS)

Boujlaidi, A. El; Hammoum, K.; Jadoual, L.; Jourdani, R.; Ait El Fqih, M.; Aouchiche, H.; Kaddouri, A.

2015-01-01

The sputter induced photon spectroscopy technique was used to study the luminescence spectra of the species sputtered from chromium powder and its oxide Cr 2 O 3 , during 5 keV Kr + ions bombardment in vacuum better than 10 −7 torr. The optical spectra recorded between 350 and 470 nm exhibit discrete lines which are attributed to neutral excited atoms of chromium (Cr I lines). The experiments are also performed under 10 −5 torr ultra pure oxygen partial pressure. The results demonstrate that the measured intensities of the emitted photons are always higher in the presence of oxygen and even higher than those obtained for Cr 2 O 3 target. In the presence of oxygen vapor we assume that an oxide film is formed on the chromium surface which is responsible of the increase of photon emission. This variation in the intensities is correctly explained in the model of electron transfer processes between the excited sputtered atom and the bombarded surface. This model suggests that the structure formed on the Cr surface in the case of oxygenated chromium is closer to that of Cr 2 O 3 oxide

Surface Morphologies of Ti and Ti-Al-V Bombarded by 1.0-MeV Au+ Ions

Science.gov (United States)

Garcia, M. A.; Rickards, J.; Cuerno, R.; Trejo-Luna, R.; Cañetas-Ortega, J.; de la Vega, L. R.; Rodríguez-Fernández, L.

2017-12-01

Ion implantation is known to enhance the mechanical properties of biomaterials such as, e.g., the wear resistance of orthopedic joints. Increasing the surface area of implants may likewise improve their integration with, e.g., bone tissue, which requires surface features with sizes in the micron range. Ion implantation of biocompatible metals has recently been demonstrated to induce surface ripples with wavelengths of a few microns. However, the physical mechanisms controlling the formation and characteristics of these patterns are yet to be understood. We bombard Ti and Ti-6Al-4V surfaces with 1.0-MeV Au+ ions. Analysis by scanning electron and atomic force microscopies shows the formation of surface ripples with typical dimensions in the micron range, with potential indeed for biomedical applications. Under the present specific experimental conditions, the ripple properties are seen to strongly depend on the fluence of the implanted ions while being weakly dependent on the target material. Moreover, by examining experiments performed for incidence angle values θ =8 ° , 23°, 49°, and 67°, we confirm the existence of a threshold incidence angle for (ripple) pattern formation. Surface indentation is also used to study surface features under additional values of θ , agreeing with our single-angle experiments. All properties of the surface structuring process are very similar to those found in the production of surface nanopatterns under low-energy ion bombardment of semiconductor targets, in which the stopping power is dominated by nuclear contributions, as in our experiments. We consider a continuum model that combines the effects of various physical processes as originally developed in that context, with parameters that we estimate under a binary-collision approximation. Notably, reasonable agreement with our experimental observations is achieved, even under our high-energy conditions. Accordingly, in our system, ripple formation is determined by mass

Influence of keV-He ion bombardment on the magnetic properties of Co/Pd multilayers

Energy Technology Data Exchange (ETDEWEB)

Mueglich, Nicolas; Buhl, Oliver; Weis, Tanja; Engel, Dieter; Ehresmann, Arno [Institute of Physics and Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel (Germany); Hellwig, Olav [San Jose Research Center, HGST, A Western Digital Company, CA (United States)

2013-07-01

Thin films of ferromagnetic Co separated by Pd films with thicknesses in the first ferromagnetic maximum of interlayer exchange coupling are magnetically dominated by perpendicular-to-plane anisotropy and labyrinth stripe domain patterns in remanence. During the magnetization reversal of such a multilayer system domain nucleation and domain wall movement can be observed for different external magnetic fields H. The influence of keV-He ion bombardment on the microstructure of the system and its resultant decrease of magnetic anisotropy has been investigated by vibrating sample magnetometry, polar magneto-optical Kerr effect and magnetic force microscopy. It is shown that areas of ferromagnetic in-plane anisotropy are created due to the ion bombardement and that the system shows an increasing quotient of superparamagnetism in the deeper layers of the multilayersystem.

Electron-positron pair creation in heavy ion collisions

International Nuclear Information System (INIS)

Kienle, P.

1987-01-01

The authors review the status of experiments to study the electron positron pair creation in heavy ion atom collisions at bombarding energies close to the Coulomb barrier. The disentanglement and characterization of various sources of positrons observed in such collisions are described with a focus on the monoenergetic electron positron pairs observed. They seem to originate from the two-body decay of a family of neutral particles with masses of about 3m and lifetimes in the range of 6 x 10 - 14 s, produced by high Coulomb fields. First attempts were made to create these particles by resonant Bhabha scattering

Influence of ion bombardment on growth and properties of PLD created DLC films

Czech Academy of Sciences Publication Activity Database

Jelínek, Miroslav; Písařík, Petr; Kocourek, Tomáš; Zemek, Josef; Lukeš, J.

2013-01-01

Roč. 110, č. 4 (2013), s. 943-947 ISSN 0947-8396 R&D Projects: GA MŠk LD12069 Institutional research plan: CEZ:AV0Z10100522 Keywords : DLC * ion bombardment * sp3 /sp2 * thin films * PLD Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.694, year: 2013

An ion-sputtering gun to clean crystal surfaces in-situ in an ultra-high-vacuum electron microscope

International Nuclear Information System (INIS)

Morita, Etsuo; Takayanagi, Kunio; Kobayashi, Kunio; Yagi, Katsumichi; Honjo, Goro

1980-01-01

The design and performance of an ion-sputtering gun for cleaning crystal surfaces in-situ in an ultra-high-vacuum electron microscope are reported. The electron microscopic aspects of ion-bombardment damage to ionic magnesium oxide, covalent germanium and silicon, and metallic gold and copper crystals, and the effects of annealing after and during sputtering are described. The growth of various kinds of films deposited in-situ on crystals cleaned by ion-sputtering are described and discussed. (author)

Effect of N4+ and C4+ ion beam bombardment on the optical and structural characteristics of ethylene-norbornene copolymer (TOPAS)

International Nuclear Information System (INIS)

Siljegovic, M.; Kacarevic-Popovic, Z.M.; Krkljes, A.N.; Stojanovic, Z.; Jovanovic, Z.M.

2011-01-01

Ion bombardment is a suitable tool to modify the optical properties of polymers. In the present study the effect of ion bombardment on the optical absorption of ethylene-norbornene copolymer (TOPAS) was studied using ultraviolet-visible (UV-Vis) and Raman spectroscopy. Polymer samples were bombarded with 60 keV C 4+ and N 4+ ion beams to various fluences ranging from 1.0 x 10 13 to 1.0 x 10 16 cm -2 . The indirect and direct band gaps have been determined. The values of direct band gaps have been found to be greater than the corresponding values of the indirect band gaps. Activation energy has been investigated as the function of ion fluences. The number of carbon atoms per conjugated length is determined according to modified Tauc's equation. The correlation between the optical band gap, activation energy for optical transition and the number of carbon atoms per conjugated length as well as chemical structure changes induced by ion beams irradiation have been discussed in the case of ethylene-norbornene copolymer.

A liquid-like model for the morphology evolution of ion bombarded thin films

Energy Technology Data Exchange (ETDEWEB)

Repetto, L., E-mail: luca.repetto@unige.it [Department of Physics and Nanomed Labs, Università di Genova, Via Dodecaneso 33, 16146 Genova (Italy); Lo Savio, R. [Department of Physics and Nanomed Labs, Università di Genova, Via Dodecaneso 33, 16146 Genova (Italy); Šetina Batič, B. [Inštitut Za Kovinske Materiale in Tehnologije, Lepi pot 11, 1000 Ljubljana (Slovenia); Firpo, G.; Angeli, E.; Valbusa, U. [Department of Physics and Nanomed Labs, Università di Genova, Via Dodecaneso 33, 16146 Genova (Italy)

2015-07-01

Thin solid films exposed to ion irradiation exhibit a peculiar evolution that can differ substantially from what is observed for bulk samples. The phenomenology of the patterns that self-organize on the substrate is very rich, with morphologies that display several degrees of order upon the modification of initial film characteristics and irradiation parameters. This richness paves the way for the fabrication of novel functional surfaces, but it is also an indication of the complexity of the underlying driving mechanisms. A remarkable simplification for the comprehension of these phenomena can come from the noteworthy similarity of the obtained patterns with those showing up when liquids dewet from their substrates. Here, we analyze the possibility to apply a liquid-like model to explain the morphology evolution of ion bombarded thin films for the whole phenomenology showing up in experiments. In establishing this connection between liquids and ion bombarded thin films, we propose to use also for liquids the insight gained for our system with recent experiments that stress the importance of the substrate topography for the selection of the dewetting mechanism. If confirmed, this result would lead to a reconsideration of the importance of capillary waves in spinodal dewetting, and will help to understand the low reproducibility of the related experimental results.

Comments on Auger electron production by Ne/sup +/ bombardment of surfaces

Energy Technology Data Exchange (ETDEWEB)

Pepper, S V; Ferrante, J [National Aeronautics and Space Administration, Cleveland, OH (USA). Lewis Research Center

1979-09-01

In this letter, the authors first report rather conclusive experimental evidence showing that the Ne Auger signal is due to asymmetric Ne-metal collisions and not symmetric Ne-Ne collisions. Next it is shown that the Ne Auger signal is in fact observable by Ne/sup +/ bombardment of Si and with signal strength comparable to that of the Si Auger signal for 3 keV incident ion energy. Finally, they comment on some trends in the relative amplitudes of the 21.9 and 25.1 eV Ne Auger signals as a function of incident ion energy and target species.

Electron cyclotron resonance discharge as a source for hydrogen and deuterium ions production

Energy Technology Data Exchange (ETDEWEB)

Chacon Velasco, A.J. [Universidad de Pamplona, Pamplona (Colombia); Dougar-Jabon, V.D. [Universidad Industrial de Santander, Bucaramanga (Colombia)

2004-07-01

In this report, we describe characteristics of a ring-structure hydrogen plasma heated in electron cyclotron resonance conditions and confined in a mirror magnetic trap and discuss the relative efficiency of secondary electrons and thermo-electrons in negative hydrogen and deuterium ion production. The obtained data and calculations of the balance equations for possible reactions demonstrate that the negative ion production is realized in two stages. First, the hydrogen and deuterium molecules are excited in collisions with the plasma electrons to high-laying Rydberg or vibrational levels in the plasma volume. The second stage leads to the negative ion production through the process of dissociative attachment of low energy electrons. The low energy electrons are originated due to a bombardment of the plasma electrode by ions of one of the driven rings and thermo-emission from heated tungsten filaments. Experiments seem to indicate that the negative ion generation occurs predominantly in the limited volume filled with thermo-electrons. Estimation of the negative ion generation rate shows that the main channel of H{sup -} and D{sup -} ion production involves the process of high Rydberg state excitation. (authors)

Electron cyclotron resonance discharge as a source for hydrogen and deuterium ions production

International Nuclear Information System (INIS)

Chacon Velasco, A.J.; Dougar-Jabon, V.D.

2004-01-01

In this report, we describe characteristics of a ring-structure hydrogen plasma heated in electron cyclotron resonance conditions and confined in a mirror magnetic trap and discuss the relative efficiency of secondary electrons and thermo-electrons in negative hydrogen and deuterium ion production. The obtained data and calculations of the balance equations for possible reactions demonstrate that the negative ion production is realized in two stages. First, the hydrogen and deuterium molecules are excited in collisions with the plasma electrons to high-laying Rydberg or vibrational levels in the plasma volume. The second stage leads to the negative ion production through the process of dissociative attachment of low energy electrons. The low energy electrons are originated due to a bombardment of the plasma electrode by ions of one of the driven rings and thermo-emission from heated tungsten filaments. Experiments seem to indicate that the negative ion generation occurs predominantly in the limited volume filled with thermo-electrons. Estimation of the negative ion generation rate shows that the main channel of H - and D - ion production involves the process of high Rydberg state excitation. (authors)

A note on the random walk theory of recoil movement in prolonged ion bombardment

International Nuclear Information System (INIS)

Koponen, Ismo

1994-01-01

A characteristic function is derived for the probability distribution of final positions of recoil atoms in prolonged ion bombardment of dense matter. The derivation is done within the framework of Poissonian random walk theory using a jump distribution, which is somewhat more general than those studied previously. ((orig.))

The influence of projectile ion induced chemistry on surface pattern formation

Energy Technology Data Exchange (ETDEWEB)

Karmakar, Prasanta, E-mail: prasantak@vecc.gov.in [Variable Energy Cyclotron Centre, 1/AF, Bidhannagar, Kolkata 700064 (India); Satpati, Biswarup [Saha Institute of Nuclear Physics, 1/AF, Bidhannagar, Kolkata 700064 (India)

2016-07-14

We report the critical role of projectile induced chemical inhomogeneity on surface nanostructure formation. Experimental inconsistency is common for low energy ion beam induced nanostructure formation in the presence of uncontrolled and complex contamination. To explore the precise role of contamination on such structure formation during low energy ion bombardment, a simple and clean experimental study is performed by selecting mono-element semiconductors as the target and chemically inert or reactive ion beams as the projectile as well as the source of controlled contamination. It is shown by Atomic Force Microscopy, Cross-sectional Transmission Electron Microscopy, and Electron Energy Loss Spectroscopy measurements that bombardment of nitrogen-like reactive ions on Silicon and Germanium surfaces forms a chemical compound at impact zones. Continuous bombardment of the same ions generates surface instability due to unequal sputtering and non-uniform re-arrangement of the elemental atom and compound. This instability leads to ripple formation during ion bombardment. For Argon-like chemically inert ion bombardment, the chemical inhomogeneity induced boost is absent; as a result, no ripples are observed in the same ion energy and fluence.

Topography development on selected inert gas and self-ion bombarded Si

International Nuclear Information System (INIS)

Vishnyakov, V.; Carter, G.; Goddard, D.T.; Nobes, M.J.

1995-01-01

An AFM and SEM study of the topography induced by 20 keV Si + , Ar + and Xe + ion bombardment of Si at 45 o incidence angles and for ion fluences between 10 17 and 10 20 cm -2 has been undertaken at room temperature. All species generate an atomic scale random roughness, the magnitude of which does not increase extensively with ion fluence, suggesting the operation of a local relaxation process. This nanometre scale roughness forms, for Ar and Xe, a background for coarser micrometre scale structures such as pits, chevrons and waves. Apart from isolated etch pits Si + irradiation generates no repetitive micrometre scale structures. Xe + irradiation produces well developed transverse waves while Ar + irradiation results in isolated chevron-like etch pit trains and ripple patches. This latter pattern evolves, with increasing ion fluence, to a corrugated facet structure. The reasons for the different behaviours are still not fully clarified. (author)

Electron-positron pair creation in heavy ion collisions

International Nuclear Information System (INIS)

Kienle, P.

1987-08-01

We review here the status of experiments to study the electron positron pair creation in heavy ion atom collisions at bombarding energies close to the Coulomb barrier. The disentanglement and characterisation of various sources of positrons observed in such collisions are described with a focus on the monoenergetic electron positron pairs observed. They seem to originate from the two-body decay of a family of neutral particles with masses of about 3 m e and life times in the range of 6x10 -14 s -10 s, produced by high Coulomb fields. First attempts were made to create these particles by resonant Bhabha scattering. First we present some experimental methods for high efficiency positron spectroscopy in heavy ion collisions. Then we describe the discovery of positron creation induced by strong time changing Coulomb fields. (orig./HSI)

Absorption of hydrogen in vanadium, enhanced by ion bombardment; Ionenbeschussunterstuetzte Absorption des Wasserstoffs in Vanadium

Energy Technology Data Exchange (ETDEWEB)

Paulus, H.; Lammers, M. [Inst. fuer Technologie- und Wissenstransfer, Soest (Germany); Mueller, K.H. [Inst. fuer Technologie- und Wissenstransfer, Soest (Germany)]|[Paderborn Univ. (Gesamthochschule), Soest (Germany). Fachbereich 16 - Elektrische Energietechnik; Kiss, G.; Kemeny, Z. [Technical Univ. Budapest (Hungary)

1998-12-31

Prior to hydrogen implantation into vanadium, the vanadium specimen usually is exposed to an activation process and is then heated at 1 atm hydrogen to temperatures between 500 and 600 C, subsequently cooled down in several steps. Within this temperature range, hydrogen solubility increases with declining temperature. A decisive factor determining hydrogen absorption is the fact that at temperatures above 250 C, oxygen desorbs from the material surface and thus no longer inhibits hydrogen absorption. Therefore a different approach was chosen for the experiments reported: Hydrogen absorption under UHV conditions at room temperature. After the usual activation process, the vanadium surface was cleaned by 5 keV Ar{sup +} ion bombardment. Thus oxygen absorption at the specimen surface (and new reactions with oxygen from the remaining gas) could be avoided, or removed. By means of thermal desorption mass spectrometry (TDMS), hydrogen absorption as a function of argon ion dose was analysed. TDMS measurements performed for specimens treated by ion bombardment prior to H{sup 2} exposure showed two H{sup 2} desorption peaks, in contrast to the profiles measured with specimens not exposed to ion bombardment. It is assumed that the ion bombardment disturbs the crystal structure so that further sites for hydrogen absorption are produced. (orig./CB) [Deutsch] Bei der Beladung von Vandium mit Wasserstoff wird ueblicherweise die Probe nach einer Aktivierungsprozedur bei 1 atm Wasserstoff auf Temperaturen im Bereich von 500 bis 600 C hochgeheizt und danach schrittweise abgekuehlt. In diesem Temperaturbereich nimmt die Wasserstoffloeslichkeit mit abnehmender Temperatur zu. Entscheidend fuer die Beladung ist aber auch die Tatsache, dass bei Temperaturen groesser 250 C Sauerstoff von der Oberflaeche desorbiert und dadurch die Absorption von Wasserstoff nicht mehr blockieren kann. Im Rahmen der hier beschriebenen Untersuchungen sollte die Wasserstoffbeladung unter UHV-Bedingungen bei

Changes in phase composition and stress state of surface layers of VK20 hard alloy after ion bombardment

International Nuclear Information System (INIS)

Platonov, G.L.; Leonov, E.Yu.; Anikin, V.N.; Anikeev, A.I.

1988-01-01

Titanium ion bombardment of the surface of the hard VK20 alloy is studied for its effect on variations in the phase and chemical composition of its surface layers. It is stated that ion treatment results in the appearance of the η-phase of Co 6 W 6 C composition in the surface layer of the VK20 alloy, in the increase of distortions and decrease of coherent scattering blocks of the hard alloy carbide phase. Such a bombardment is found to provoke a transition of the plane-stressed state of the hard alloy surface into the volume-stressed state. It is established that ion treatment does not cause an allotropic transition of the cobalt phase α-modification, formed during grinding of the hard alloy, into the β-modification

The influence of noble-gas ion bombardment on the electrical and optical properties of clean silicon surfaces

International Nuclear Information System (INIS)

Martens, J.W.D.

1980-01-01

A study of the effect of argon and helium ion bombardment on the electrical and optical properties of the clean silicon (211) surface is described. The objective of the study was to determine the effect of noble gas ions on the density of surface states at the clean silicon surface. (Auth.)

Modulation transfer function and detective quantum efficiency of electron bombarded charge coupled device detector for low energy electrons

Czech Academy of Sciences Publication Activity Database

Horáček, Miroslav

2005-01-01

Roč. 76, č. 9 (2005), 093704:1-6 ISSN 0034-6748 R&D Projects: GA ČR(CZ) GA202/03/1575 Keywords : electron bombarded CCD * modulation transfer function * detective quantum efficiency Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.235, year: 2005

Modulation transfer function and detective quantum efficiency of electron bombarded charge coupled device detector for low energy electrons

International Nuclear Information System (INIS)

Horacek, Miroslav

2005-01-01

The use of a thinned back-side illuminated charge coupled device chip as two-dimensional sensor working in direct electron bombarded mode at optimum energy of the incident signal electrons is demonstrated and the measurements of the modulation transfer function (MTF) and detective quantum efficiency (DQE) are described. The MTF was measured for energy of electrons 4 keV using an edge projection method and a stripe projection method. The decrease of the MTF for a maximum spatial frequency of 20.8 cycles/mm, corresponding to the pixel size 24x24 μm, is 0.75≅-2.5 dB, and it is approximately the same for both horizontal and vertical directions. DQE was measured using an empty image and the mixing factor method. Empty images were acquired for energies of electrons from 2 to 5 keV and for various doses, ranging from nearly dark image to a nearly saturated one. DQE increases with increasing energy of bombarded electrons and reaches 0.92 for electron energy of 5 keV. For this energy the detector will be used for the angle- and energy-selective detection of signal electrons in the scanning low energy electron microscope

Experimental and theoretical studies of bombardment induced surface morphology changes

International Nuclear Information System (INIS)

Carter, G.; Nobes, M.J.; Williams, J.S.

1980-01-01

In this review results of experimental and theoretical studies of solid surface morphology changes due to ion bombardment are discussed. An attempt is undertaken to classify the observed specific features of a structure, generated by ion bombardment [ru

Chemical changes in titanate surfaces induced by Ar+ ion bombardment

International Nuclear Information System (INIS)

Gonzalez-Elipe, A.R.; Fernandez, A.; Espinos, J.P.; Munuera, G.; Sanz, J.M.

1992-01-01

The reduction effects and compositional changes induced by 3.5 keV Ar + bombardment of several titanates (i.e. SrTiO 3 , Al 2 TiO 5 and NiTiO 3 ) have been quantitatively investigated by XPS. In all the samples studied here the original Ti 4+ species were reduced to lower oxidation states (i.e. Ti 3+ and Ti 2+ ), although to a lesser extent than in pure TiO 2 . On the contrary, whereas Sr 2+ and Al 3+ seem to remain unaffected by Ar + bombardment, in agreement with the behaviour of the respective oxides (i.e. SrO and Al 2 O 3 ), Ni 2+ appears more easily reducible to Ni o in NiTiO 3 than in NiO. In addition, other specific differences were observed between the titanates, which reveal the existence of interesting chemical effects related to the presence of the different counter-ions in the titanates. In the case of Al 2 TiO 5 , its Ar + -induced decomposition to form TiO 2 + Al 2 O 3 could be followed by XPS. (Author)

Measures to alleviate the back bombardment effect of thermionic rf electron gun

International Nuclear Information System (INIS)

Huang, Y.; Xie, J.

1991-01-01

Thermionic rf electron gun finds application as a high brightness electron source for rf linacs. However, cathode heating from back-bombardment effect causes a ramp in the macro-pulse beam current and limit the usable pulse width. Three methods: ring cathode, magnetic deflection and laser assisted heating are studied in theory and in experiment. The results of these studies are reported

Electron and ion beam degradation effects in AES analysis of silicon nitride thin films

International Nuclear Information System (INIS)

Fransen, F.; Vanden Berghe, R.; Vlaeminck, R.; Hinoul, M.; Remmerie, J.; Maes, H.E.

1985-01-01

Silicon nitride films are currently investigated by AES combined with ion profiling techniques for their stoichiometry and oxygen content. During this analysis, ion beam and primary electron effects were observed. The effect of argon ion bombardment is the preferential sputtering of nitrogen, forming 'covalent' silicon at the surface layer (AES peak at 91 eV). The electron beam irradiation results in a decrease of the covalent silicon peak, either by an electron beam annealing effect in the bulk of the silicon nitride film, or by an ionization enhanced surface diffusion process of the silicon (electromigration). By the electron beam annealing, nitrogen species are liberated in the bulk of the silicon nitride film and migrate towards the surface where they react with the covalent silicon. The ionization enhanced diffusion originates from local charging of the surface, induced by the electron beam. (author)

Ion implantation apparatus

International Nuclear Information System (INIS)

Forneris, J.L.; Hicks, W.W.; Keller, J.H.; McKenna, C.M.; Siermarco, J.A.; Mueller, W.F.

1981-01-01

The invention relates to ion bombardment or implantation apparatus. It comprises an apparatus for bombarding a target with a beam of ions, including an arrangement for measuring the ion beam current and controlling the surface potential of the target. This comprises a Faraday cage formed, at least in part, by the target and by walls adjacent to, and electrically insulated from, the target and surrounding the beam. There is at least one electron source for supplying electrons to the interior of the Faraday cage and means within the cage for blocking direct rectilinear radiation from the source to the target. The target current is measured and combined with the wall currents to provide a measurement of the ion beam current. The quantity of electrons supplied to the interior of the cage can be varied to control the target current and thereby the target surface potential. (U.K.)

Exfoliation on stainless steel and inconel produced by 0.8-4 MeV helium ion bombardment

International Nuclear Information System (INIS)

Paszti, F.; Mezey, G.; Pogany, L.; Fried, M.; Manuaba, A.; Kotai, E.; Lohner, T.; Pocs, L.

1982-11-01

Trying to outline the energy dependence of surface deformations such as exfoliation and flaking on candidate CTR first-wall materials, stainless steel and two types of inconels were bombarded by 0.8, 1 and 4 MeV helium ions. All the bombarded spots could be characterized by by large exfoliations covering almost the total implanted area. No spontaneous rupture was observed except on one type of inconel where flaking took place right after reaching the critical dose. After mechanical opening of the formations, similar inner morphology was found as in our previous studies on gold. (author)

Secondary emission ion analyzer provided with an electron gun for insulating material analysis

International Nuclear Information System (INIS)

Blanchard, Bruno; Carrier, Patrick; Marguerite, J.-L.; Rocco, J.-C.

1976-01-01

This invention relates to a secondary emission ion analyser, fitted with an electron gun. It is used in the mass spectrometry analysis of electrically insulating bodies. It has already been suggested to bombard the target with an electron beam in conjunction with the beam of primary particles, in order to reduce the space charge near the target. The object of this invention is the application of this known process to appliances of the ion analyser type with a high electric field near the target. Its main characteristic is the use of an electron gun emitting an electron beam through the extraction lens placed opposite the target. The extraction electric field influences the path of the electrons but the electric and mechanical specifications of the electron gun in the invention are such that the target is correctly sprayed by the electron beam [fr

Self-organised nano-structuring of thin oxide-films under swift heavy ion bombardment

International Nuclear Information System (INIS)

Bolse, Wolfgang

2006-01-01

Surface instabilities and the resulting self-organisation processes play an important role in nano-technology since they allow for large-array nano-structuring. We have recently found that the occurrence of such instabilities in thin film systems can be triggered by energetic ion bombardment and the subsequent self-assembly of the surface can be nicely controlled by fine-tuning of the irradiation conditions. The role of the ion in such processes is of double nature: If the instability is latently present already in the virgin sample, but self-assembly cannot take place because of kinetic barriers, the ion impact may just supply the necessary atomic mobility. On the other hand, the surface may become instable due to the ion beam induced material modifications and further irradiation then results in its reorganisation. In the present paper, we will review recently observed nano-scale self-organisation processes in thin oxide-films induced by the irradiation with swift heavy ions (SHI) at some MeV/amu energies. The first example is about SHI induced dewetting, which is driven by capillary forces already present in the as-deposited samples. The achieved dewetting pattern show an amazing similarity to those observed for liquid polymer films on Si, although in the present case the samples were kept at 80 K and hence have never reached their melting point. The second example is about self-organised lamellae formation driven by planar stresses, which are induced by SHI bombardment under grazing incidence and result in a surface instability and anisotropic plastic deformation (hammering effect). Taking advantage of these effects and modifying the irradiation procedure, we were able to generate more complex structures like NiO-'nano-towers' of 2 μm height and 200 nm in diameter

Electrical properties of irradiated PVA film by using ion/electron beam

Science.gov (United States)

Abdelrahman, M. M.; Osman, M.; Hashhash, A.

2016-02-01

Ion/electron beam bombardment has shown great potential for improving the surface properties of polymers. Low-energy charged (ion/electron) beam irradiation of polymers is a good technique to modify properties such as electrical conductivity, structural behavior, and their mechanical properties. This paper reports on the effect of nitrogen and electron beam irradiation on the electrical properties of polyvinyl alcohol (PVA) films. PVA films of 4 mm were exposed to a charged (ion/electron) beam for different treatment times (15, 30, and 60 minutes); the beam was produced from a dual beam source using nitrogen gas with the other ion/electron source parameters optimized. The dielectric loss tangent tan δ , electrical conductivity σ , and dielectric constant ɛ ^' } in the frequency range 100 Hz-100 kHz were measured at room temperature. The variation of dielectric constant and loss tangent as a function of frequency was also studied at room temperature. The dielectric constant was found to be strongly dependent on frequency for both ion and electron beam irradiation doses. The real (ɛ ^' }) and imaginary (ɛ ^' ' }) parts of the dielectric constant decreased with frequency for all irradiated and non-irradiated samples. The AC conductivity showed an increase with frequency for all samples under the influence of both ion and electron irradiation for different times. Photoluminescence (PL) spectral changes were also studied. The formation of clusters and defects (which serve as non-radiative centers on the polymer surface) is confirmed by the decrease in the PL intensity.

CO dissociation and CO hydrogenation on smooth and ion-bombarded Pd(1 1 1): SFG and XPS spectroscopy at mbar pressures

Science.gov (United States)

Rupprechter, G.; Kaichev, V. V.; Unterhalt, H.; Morkel, M.; Bukhtiyarov, V. I.

2004-07-01

The CO dissociation probability on transition metals is often invoked to explain the product distribution (selectivity) of catalytic CO hydrogenation. Along these lines, we have investigated CO adsorption and dissociation on smooth and ion-bombarded Pd(1 1 1) at pressures up to 1 mbar using vibrational sum frequency generation (SFG) and X-ray photoelectron spectroscopy (XPS). Under high pressure, CO adsorbate structures were observed that were identical to high-coverage structures in UHV. On ion-bombarded surfaces an additional species was detected which was attributed to CO bridge bonded to defect (low-coordinated) sites. On both surfaces, no indications of CO dissociation were found even after hours of 0.1 mbar CO exposure. However, exposing CO/H 2 mixtures to ion-bombarded Pd(1 1 1) produced carbonaceous deposits suggesting CH xO species as precursors for CO bond cleavage and that the formation of CH xO is facilitated by surface defects. The relevance of the observations for CO hydrogenation on Pd catalysts is discussed.

CO dissociation and CO hydrogenation on smooth and ion-bombarded Pd(1 1 1): SFG and XPS spectroscopy at mbar pressures

Energy Technology Data Exchange (ETDEWEB)

Rupprechter, G.; Kaichev, V.V.; Unterhalt, H.; Morkel, M.; Bukhtiyarov, V.I

2004-07-31

The CO dissociation probability on transition metals is often invoked to explain the product distribution (selectivity) of catalytic CO hydrogenation. Along these lines, we have investigated CO adsorption and dissociation on smooth and ion-bombarded Pd(1 1 1) at pressures up to 1 mbar using vibrational sum frequency generation (SFG) and X-ray photoelectron spectroscopy (XPS). Under high pressure, CO adsorbate structures were observed that were identical to high-coverage structures in UHV. On ion-bombarded surfaces an additional species was detected which was attributed to CO bridge bonded to defect (low-coordinated) sites. On both surfaces, no indications of CO dissociation were found even after hours of 0.1 mbar CO exposure. However, exposing CO/H{sub 2} mixtures to ion-bombarded Pd(1 1 1) produced carbonaceous deposits suggesting CH{sub x}O species as precursors for C---O bond cleavage and that the formation of CH{sub x}O is facilitated by surface defects. The relevance of the observations for CO hydrogenation on Pd catalysts is discussed.

Temperature effect on the formation of a relief of diamond-like carbon coatings and its modification by ion bombardment

International Nuclear Information System (INIS)

Rubshtein, A.P.; Trakhtenberg, I.Sh.; Yugov, V.A.; Vladimirov, A.B.; Plotnikov, S.A.; Ponosov, Yu.S

2006-01-01

Using the method of pulsed arc sputtering of a graphite target the diamond-like coatings (DLC) ∼1.5 μm thick are deposited on a steel R6M5 substrate. The relief of the coatings obtained under various temperature conditions is investigated. Variations of carbon DLC surfaces are followed after their bombardment with accelerated argon or chemically active oxygen ions. Argon ion bombardment is established to be preferred for producing a smoothed-out DLC relief. It is shown that a DLC relief should be taken into account when measuring microhardness. It is recommended that transformation of interatomic bonds in irradiated subsurface layers be taken into consideration if information index of methods applied constitutes several monolayers [ru

Comparison of secondary ion emission induced in silicon oxide by MeV and KeV ion bombardment

International Nuclear Information System (INIS)

Allali, H.; Nsouli, B.; Thomas, J.P.; Szymczak, W.; Wittmaack, K.

1993-09-01

The surface and near-surface composition of SiO 2 layers, has been investigated by negative secondary ion emission mass spectrometry (SIMS) using MeV and KeV ion bombardment in combination with time-of-flight (TOF) mass analysis. The spectra recorded in the mass range 0-100 u are dominated by surface impurities, notably hydrocarbons and silicon polyanions incorporating H and OH entities. The characteristic (fragmentation) patterns are quite different for light and high-velocity ion impact. In high-velocity TOF-SIMS analysis of P-doped layers, prepared by chemical vapour deposition (CVD), the mass lines at 63 and 79 u are very prominent and appear to correlate with the phosphorus concentration (PO 2 and PO 3 , respectively). It is shown, however, that for unambiguous P analysis one has to use dynamic SIMS or high mass resolution. (author) 11 refs., 5 figs

Influence of ion bombardment on structural and electrical properties of SiO2 thin films deposited from O2/HMDSO inductively coupled plasmas under continuous wave and pulsed modes

International Nuclear Information System (INIS)

Bousquet, A.; Goullet, A.; Leteinturier, C.; Granier, A.; Coulon, N.

2008-01-01

Low pressure Plasma Enhanced Chemical Vapour Deposition is commonly used to deposit insulators on temperature sensitive substrates. In these processes, the ion bombardment experienced by films during its growth is known to have benefits but also some disadvantages on material properties. In the present paper, we investigate the influence of this bombardment on the structure and the electrical properties of SiO 2 -like film deposited from oxygen/hexa-methyl-di-siloxane radiofrequency plasma in continuous and pulsed modes. First, we studied the ion kinetics thanks to time-resolved measurements by Langmuir probe. After, we showed the ion bombardment in such plasma controls the OH bond content in deposited films. Finally, we highlight the impressive reduction of fixed charge and interface state densities in films obtained in pulsed mode due to a lower ion bombardment. (authors)

Nucleation of diamond by pure carbon ion bombardment--a transmission electron microscopy study

International Nuclear Information System (INIS)

Yao, Y.; Liao, M.Y.; Wang, Z.G.; Lifshitz, Y.; Lee, S.

2005-01-01

A cross-sectional high-resolution transmission electron microscopy (HRTEM) study of a film deposited by a 1 keV mass-selected carbon ion beam onto silicon held at 800 deg. C is presented. Initially, a graphitic film with its basal planes perpendicular to the substrate is evolving. The precipitation of nanodiamond crystallites in upper layers is confirmed by HRTEM, selected area electron diffraction, and electron energy loss spectroscopy. The nucleation of diamond on graphitic edges as predicted by Lambrecht et al. [W. R. L. Lambrecht, C. H. Lee, B. Segall, J. C. Angus, Z. Li, and M. Sunkara, Nature, 364 607 (1993)] is experimentally confirmed. The results are discussed in terms of our recent subplantation-based diamond nucleation model

Properties of TiN coatings deposited by the method of condensation with ion bombardment accompanied by high-energy ion beam

International Nuclear Information System (INIS)

Obrezkov, O.I.; Vershok, B.A.; Dormashev, A.B.; Margulev, I.Ya.; Molchanova, S.A.; Andreev, E.S.; Dervuk, V.V.

2002-01-01

Vacuum-sputtering adapted commercial facility based coating of stainless steel with titanium nitride followed two procedures: ion bombardment condensation (IBC) and IBC under simultaneous effect of ion beam (IB). The deposition rate was equal to 0.1 μm min -1 ; the investigated coatings were characterized by 2.5 μm depth. Comparison analysis of features and characteristics of the specimens, as well as, full-scale tests of a coated cutting tool enabled to make conclusions about advantages of application of IB assisted IBC technology in contrast to the reference IBC technology [ru

A theoretical approach to sputtering due to molecular ion bombardment, 1

International Nuclear Information System (INIS)

Karashima, Shosuke; Ootoshi, Tsukuru; Kamiyama, Masahide; Kim, Pil-Hyon; Namba, Susumu.

1981-01-01

A shock wave model is proposed to explain theoretically the non-linear effects in sputtering phenomena by molecular ion bombardments. In this theory the sputtering processes are separated into two parts; one is due to linear effects and another is due to non-linear effects. The treatment of the linear parts is based on the statistical model by Schwarz and Helms concerning a broad range of atomic collision cascades. The non-linear parts are treated by the model of shock wave due to overlapping cascades, and useful equations to calculate the sputtering yields and the dynamical quantities in the system are derived. (author)

Advances in fast-atom-bombardment mass spectroscopy

International Nuclear Information System (INIS)

Hemling, M.E.

1986-01-01

A comparison of fast atom bombardment and field desorption mass spectrometry was made to determine relative sensitivity and applicability. A series of glycosphingolipids and a series of protected oligonucleotides of known structure were analyzed to ascertain the potential utility of fast atom bombardment mass spectrometry in the structural elucidation of novel compounds in these classes. Negative ion mass markers were also developed. Fast atom bombardment was found to be one-to-two orders of magnitude more sensitive than field desorption based on the analysis of a limited number of compounds from several classes. Superior sensitivity was not universal and field desorption was clearly better in certain cases. In the negative ion mode in particular, fast atom bombardment was found to be a useful tool for the determination of the primary structure of glycosphingolipids and oligonucleotides. Carbohydrate sequence and branching information, and a fatty acid and lipid base composition were readily obtained from the mass spectra of glycosphingolipids while bidirectional nucleotide sequence, nucleotide base, and protecting group assignments were obtained for oligonucleotides. Based on this knowledge, a tentative structure of a human peripheral nervous system glycosphingolipid implicated in certain cases of disorders such as amyotrophic lateral sclerosis, Lou Gehrig's Disease, was proposed. Suitable negative ion mass markers were found in dispersions of poly(ethylene) and poly(propylene)glycols in a triethylenetetramine matrix, a matrix which also proved useful in the analysis of glycosphingolipids. These polyglycol dispersions provided ions for calibration to 2300 daltons

Uranium targets sandwiched between carbon layers for use on target wheels and on a Wobbler in heavy-ion bombardments

International Nuclear Information System (INIS)

Folger, H.; Hartmann, W.; Klemm, J.; Thalheimer, W.

1989-01-01

Uranium layers of ≅ 0.4 mg/cm 2 are evaporated by means of a 6 kW electron-beam gun onto 0.04 mg/cm 2 thick carbon films in a high-vacuum process; a protecting layer of ≅ 0.01 mg/cm 2 of carbon is added in the same vacuum cycle. The evaporation- and deposition yields are discussed and measurements of target characteristics are described. C/U/C sandwich targets in the shape of a sector of an annulus are prepared for use on rotating target wheels of 155 mm radius to be bombarded with a pulsed beam of heavy ions. One type of circular targets of 20 mm in diameter is mounted to a target wobbler. Both, wheel and wobbler, distribute the intensity of the heavy-ion beam to a larger area to reduce radiation damages. Examples of target applications will be mentioned. (orig.)

Selective laser-induced photochemical dry etching of semiconductors controlled by ion-bombardment-induced damage

International Nuclear Information System (INIS)

Ashby, C.I.H.; Myers, D.R.; Vook, F.L.

1987-01-01

When a photochemical dry etching process requires direct participation of photogenerated carriers in the chemical reaction, it is sensitive to the electronic properties of the semiconductor. For such solid-excitation-based dry etching processes, the balance between reaction and carrier recombination rates determines the practical utility of a particular reaction for device fabrication. The distance from the surface at which the photocarriers are generated by light adsorption is determined by the absorption coefficient. In the absence of an external bias potential, only those carriers formed within a diffusion length of the surface space-charge region will have an opportunity to drive the dry etching reaction. When the absorption coefficient is high, most of the photons generate carriers within a diffusion length from the surface space-charge region, and the etching rate is largely determined by the balance between the rate of the carrier-driven reaction and the surface recombination velocity. When the recombination rate of free carriers in the bulk of the semiconductor is high, the effective diffusion length is reduced and fewer of the carriers generated in the subsurface region ever reach the surface. An important effect of ion bombardment is the creation of many lattice defects that increase the rate of recombination of electrons and holes. When a sufficient number of defects, which act as recombination sites, are formed during ion implantation, the recombination of photogenerated carriers at these defects in the subsurface region can greatly reduce the number of carriers which can reach the surface and drive a photochemical etching reaction

In situ ion etching in a scanning electron microscope

International Nuclear Information System (INIS)

Dhariwal, R.S.; Fitch, R.K.

1977-01-01

A facility for ion etching in a scanning electron microscope is described which incorporates a new type of electrostatic ion source and viewing of the specimen is possible within about 30 sec after terminating the ion bombardment. Artefacts produced during etching have been studied and cone formation has been followed during its growth. The instrument has provided useful structural information on metals, alloys, and sinters. However, although insulating materials, such as plastics, glass and resins, have been successfully etched, interpretation of the resultant micrographs is more difficult. Ion etching of soft biological tissues, such as the rat duodenum was found to be of considerable interest. The observed structural features arise from the selective intake of the heavy fixation elements by different parts of the tissue. Hard biological materials, such as dental tissues and restorative materials, have also been studied and the prismatic structure of the enamel and the form and distribution of the dentinal tubules have been revealed. (author)

MD and BCA simulations of He and H bombardment of fuzz in bcc elements

Science.gov (United States)

Klaver, T. P. C.; Zhang, S.; Nordlund, K.

2017-08-01

We present results of MD simulations of low energy He ion bombardment of low density fuzz in bcc elements. He ions can penetrate several micrometers into sparse fuzz, which allows for a sufficient He flux through it to grow the fuzz further. He kinetic energy falls off exponentially with penetration depth. A BCA code was used to carry out the same ion bombardment on the same fuzz structures as in MD simulations, but with simpler, 10 million times faster calculations. Despite the poor theoretical basis of the BCA at low ion energies, and the use of somewhat different potentials in MD and BCA calculations, the ion penetration depths predicted by BCA are only ∼12% less than those predicted by MD. The MD-BCA differences are highly systematic and trends in the results of the two methods are very similar. We have carried out more than 200 BCA calculation runs of ion bombardment of fuzz, in which parameters in the ion bombardment process were varied. For most parameters, the results show that the ion bombardment process is quite generic. The ion species (He or H), ion mass, fuzz element (W, Ta, Mo, Fe) and fuzz element lattice parameter turned out to have a modest influence on ion penetration depths at most. An off-normal angle of incidence strongly reduces the ion penetration depth. Increasing the ion energy increases the ion penetration, but the rate by which ion energy drops off at high ion energies follows the same exponential pattern as at lower energies.

An ion accelerator facility for the preparation of nuclear bombardement targets

International Nuclear Information System (INIS)

Grime, G.W.; Takacs, J.

1981-01-01

As a result of the demand for increasingly complex nuclear bombardment targets in this laboratory, work has started on the construction of a medium-energy accelerator facility capable of preparing targets both by ion implantation and by heavy-ion sputtering. Basic consideration was given in the design to flexibility and simplicity. The ion source chosen was the Harwell sputter ion gun which is capable of producing ions of practically any element at currents up to several hundred μA. This was modified to suit our specific requirement. The acceleration system was constructed to operate at a maximum of 100 kV, and the beam is focussed by a three-cylinder electrostatic lens. The ions are analysed by 50 0 magnet which is capable of a mass dispersion of 7 mm in the target chamber between adjacent mass numbers at mass 100. A slit feedback system is used to stabilise the energy against short-term fluctuations. The system is fitted with two target chambers; one after the magnet and one after the electrostatic lens. The latter is used for applications such as sputtering. Two dimensional scanning is available in both target chambers for ensuring uniformity of implantation over areas larger than the spot size. Using this apparatus, implanted targets of 3 He and 20 Ne have been prepared. In addition high quality films of refractory metals have been sputtered using Ar or Xe beams. (orig.)

Low temperature magnetron sputter deposition of polycrystalline silicon thin films using high flux ion bombardment

International Nuclear Information System (INIS)

Gerbi, Jennifer E.; Abelson, John R.

2007-01-01

We demonstrate that the microstructure of polycrystalline silicon thin films depends strongly on the flux of low energy ions that bombard the growth surface during magnetron sputter deposition. The deposition system is equipped with external electromagnetic coils which, through the unbalanced magnetron effect, provide direct control of the ion flux independent of the ion energy. We report the influence of low energy ( + on the low temperature ( + ions to silicon neutrals (J + /J 0 ) during growth by an order of magnitude (from 3 to 30) enables the direct nucleation of polycrystalline Si on glass and SiO 2 coated Si at temperatures below 400 degree sign C. We discuss possible mechanisms for this enhancement of crystalline microstructure, including the roles of enhanced adatom mobility and the formation of shallow, mobile defects

Oxidation under electron bombardment. A tool for studying the initial states of silicon oxidation

Energy Technology Data Exchange (ETDEWEB)

Carriere, B.; Deville, J.P.; El Maachi, A.

1987-06-01

The exciting beam of an Auger electron spectrometer has been used to monitor the oxidation of silicon single crystals at room temperature and very low pressures of oxygen (approx. 10/sup -7/ Torr). This process allows us to build ultra-thin layers of silica on silicon (down to 30 A) but it is mostly used to investigate the mechanisms of the initial stages of oxidation. Auger spectra recorded continuously during the oxidation process provide information on (1) the nature of the silicon-oxygen chemical bonds which are interpreted through fine structure in the Auger peak, and (2) the kinetics of oxide formation which are deduced from curves of Auger signal versus time. An account is given of the contribution of these Auger studies to the description of the intermediate oxide layer during the reaction between silicon and oxygen and the influence of surface structural disorder, induced mainly by argon-ion bombardment, is discussed in terms of reactivity and oxide coverage.

The repetitive flaking of Inconel 625 by 100 keV helium bombardment

International Nuclear Information System (INIS)

Whitton, J.L.; Chen, H.M.; Littmark, U.

1981-01-01

Repetitive flaking of Inconel 625 occurs with ion bombardment doses of > than 10 18 100 keV helium ions cm -2 , with up to 39 exfoliations being observed after bombardment with 3 x 10 19 ions cm -2 . The thickness of the flakes, measured by scanning electron microscopy, is some 30% greater than when measured by Rutherford backscattering (RBS) of 1.8 MeV helium ions. These RBS measurements compare well with the thickness of the remaining layers in the resultant craters and to the most probable range of the 100 keV helium. The area of the flakes is dictated by the grain boundaries, and when one flake is ejected, the adjacent grains are prevented from doing so since there now exists an escape route for the injected helium. A strong dose rate dependence is observed; decreasing the beam current from 640 μA cm -2 to 64 μA cm -2 results in a factor 20 fewer flakes being exfoliated (for the same total dose of 3 x 10 19 ions cm -2 ). Successive flakes decrease in area, suggesting that eventually a cratered, but stable, surface will result with the only erosion being by the much less effective mechanism of sputtering. (orig.)

Si(LMM) Auger electron emission from Si alloys by keV Ar/sup +/ ion bombardment, new effect and application

Energy Technology Data Exchange (ETDEWEB)

Hiraki, A; Kim, S; Imura, T; Iwami, M [Osaka Univ., Suita (Japan). Faculty of Engineering

1979-09-01

Si(LMM) Auger spectra excited by keV ion bombardment were studied in Si alloyed with several elements (Au, Cu, Pd, Ni, C, and H). The spectra differed completely from those of pure Si. The main characteristics are (1) the spectra are composed of two well-separated peaks (88 and 92 eV) called the atomic-like peak (88 eV) and the bulk-like peak (92 eV); and (2) the atomic-like peak is enhanced with respect to the bulk-like peak, and this enhancement becomes more obvious as the concentration of partner elements of the alloys are increased. The possible application of the present phenomena is proposed as a technique for detecting the homogeneity of Si alloy films in the three-dimensional sense - as an example, the three-dimensional distribution of hydrogen in hydrogenated amorphous silicon (a-Si-H).

Investigation of energy thresholds of atomic and cluster sputtering of some elements under ion bombardment

CERN Document Server

Atabaev, B G; Lifanova, L F

2002-01-01

Threshold energies of sputtering of negative cluster ions from the Si(111) surface were measured at bombardment by Cs sup + , Rb sup + , and Na sup + ions with energy of 0.1-3.0 keV. These results are compared with the calculations of the similar thresholds by Bohdansky etc. formulas (3) for clusters Si sub n sup - and Cu sub n sup - with n=(1-5) and also for B, C, Al, Si, Fe, Cu atoms. Threshold energies of sputtering for the above elements were also estimated using the data from (5). Satisfactory agreement between the experimental and theoretical results was obtained. (author)

Secondary electron emission in nanostructured porous silicon

Energy Technology Data Exchange (ETDEWEB)

Ruano, G D; Ferron, J; Koropecki, R R, E-mail: gdruano@ceride.gov.a [INTEC-UNL-CONICET, Gueemes 3450 - 3000 Santa Fe (Argentina)

2009-05-01

We studied the reversible reduction induced by ion bombardment of the secondary electron emission (SEE) yield. This effect has been modelled as due to changes in dynamically sustained dipoles related with ions and electrons penetration ranges. Such charge configuration precludes the escape of electrons from the nanoporous silicon, making the SEE dependent on the flux of impinging ions. Since this dipolar momentum depends on the electric conduction of the porous medium, by controlled oxidation of the nanoporous structure we change the conduction features of the sample, studying the impact on the SEE reduction effect. Li ion bombardment was also used with the intention of changing the parameters determining the effect. FT-IR and Auger electron spectroscopy were used to characterize the oxidation degree of the samples at different depth scales

Diffusion processes in bombardment-induced surface topography

International Nuclear Information System (INIS)

Robinson, R.S.

1984-01-01

The bombardment of surfaces with moderate energy ions can lead to the development of various micron-sized surface structures. These structures include ridges, ledges, flat planes, pits and cones. The causal phenomena in the production of these features are sputtering, ion reflection, redeposition of sputtered material, and surface diffusion of both impurity and target-atom species. The authors concentrate on the formation of ion bombardment-induced surface topography wherein surface diffusion is a dominant process. The most thoroughly understood aspect of this topography development is the generation of cone-like structures during sputtering. The formation of cones during sputtering has been attributed to three effects. These are: (1) the presence of asperities, defects, or micro-inclusions in the surface layers, (2) the presence of impurities on the surfaces, and (3) particular crystal orientations. (Auth.)

Ranges, Reflection and Secondary Electron Emission for keV Hydrogen Ions Incident on Solid N2

DEFF Research Database (Denmark)

Børgesen, P.; Sørensen, H.; Hao-Ming, Chen

1983-01-01

Ranges were measured for 0.67–3.3 keV/amu hydrogen and deuterium ions in solid N2. Comparisons with similar results for N2-gas confirm the previously observed large phase effect in the stopping cross section. Measurements of the secondary electron emission coefficient for bulk solid N2 bombarded...... by 0.67–9 keV/amu ions also seem to support such a phase effect. It is argued that we may also extract information about the charge state of reflected projectiles....

Study of electron beam effects on surfaces using x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS)

International Nuclear Information System (INIS)

Gettings, M.; Coad, J.P.

1976-02-01

Discrepancies in the surface analyses of oxidised or heavily contaminated materials have been observed between X-ray Photoelectron Spectroscopy (XPS) and techniques using electron beams (primarily Auger Electron Spectroscopy (AES)). These discrepancies can be ascribed to the influence of the primary electron beam and to illustrate the various types of electron effects different materials were analysed using XPS and Secondary Ion Mass Spectroscopy (SIMS) before and after large area electron bombardment. The materials used included chrome and stainless steels, nickel, platinum, glass and brass. (author)

Electronic emission and electron guns

International Nuclear Information System (INIS)

Roy, Amitava

2010-01-01

This paper reviews the process of electron emission from metal surface. Although electrons move freely in conductors like metals, they normally do not leave the metal without some manipulation. In fact, heating and bombardment are the two primary ways in which electrons are emitted through the use of a heating element behind the cathode (termed thermionic emission) or as a result of bombardment with a beam of electrons, ions, or metastable atoms (termed secondary emission). Another important emission mechanism called Explosive Electron Emission (EEE) is also often used in various High Voltage Pulse Power Systems to generate very high current (few hundreds of kA) pulsed electron beams. The electron gun is the device in that it shoots off a continuous (or pulsed) stream of electrons. A brief idea about the evolution of the electron gun components and their basis of functioning are also discussed. (author)

Carbon contaminant in the ion processing of aluminum oxide film

International Nuclear Information System (INIS)

Chaug, Y.; Roy, N.

1989-01-01

Ion processing can induce contamination on the bombarded surface. However, this process is essential for the microelectronics device fabrication. Auger electron spectroscopy has been used to study the simultaneous deposition of carbon impurity during ion bombardment of magnetron rf-sputtering deposited aluminum oxide film. Ion bombardment on aluminum oxide results in a preferential removal of surface oxygen and a formation of a metastable state of aluminum suboxide. Cosputtered implanted carbon contaminant appears to have formed a new state of stoichiometry on the surface of the ion bombarded aluminum oxide and existed as an aluminum carbide. This phase has formed due to the interaction of the implanted carbon and the aluminum suboxide. The Ar + ion sputter etching rate is reduced for the carbon contaminated oxide. The electrical resistance of the aluminum oxide between two gold strips has been measured. It is found that the electrical resistance is also reduced due to the formation of the new stoichiometry on the surface

Chemical changes induced on a TiO2 surface by electron bombardment

International Nuclear Information System (INIS)

Vergara, L.I.; Passeggi, M.C.G.; Ferron, J.

2007-01-01

We study the TiO 2 (Ti 4+ ) chemical reduction induced by electron bombardment using Auger electron spectroscopy and factor analysis. We show that the electron irradiation of a TiO 2 sample is characterized by the appearance of a lower Ti oxidation state, Ti 2 O 3 (Ti 3+ ), followed by a further deposition of carbon, which is present inevitably in the environment even under ultra-high vacuum conditions. The appearance of C over the surface is found to be a complex mechanism which affects the reduction process through passivation of the electron-induced oxygen desorption and formation of titanium carbide. For very high irradiation doses, we also found that the chemical changes on the surface are stopped due to the deposition of carbon in a graphitic form

Diamond-like carbon layers modified by ion bombardment during growth and researched by Resonant Ultrasound Spectroscopy

Czech Academy of Sciences Publication Activity Database

Kocourek, Tomáš; Jelínek, Miroslav; Písařík, Petr; Remsa, Jan; Janovská, Michaela; Landa, Michal; Zemek, Josef; Havránek, Vladimír

2017-01-01

Roč. 417, Sep (2017), s. 213-217 ISSN 0169-4332 R&D Projects: GA ČR(CZ) GA15-05864S Institutional support: RVO:68378271 ; RVO:61388998 ; RVO:61389005 Keywords : in-situ ion bombardment * pulsed laser deposition * diamond-like carbon * hybrid technology * flm modification Subject RIV: BL - Plasma and Gas Discharge Physics OBOR OECD: Fluids and plasma physics (including surface physics) Impact factor: 3.387, year: 2016

Carbon buildup monitoring using RBS: Correlation with secondary electrons

International Nuclear Information System (INIS)

Aguilera, E.F.; Rosales, P.; Martinez-Quiroz, E.; Murillo, G.; Fernandez, M.C.

2006-01-01

The RBS technique is applied to solve the problem of on-line monitoring of the carbon deposited on a thin backed foil under ion bombardment. An iterative method is used to reliably extract quantities such as number of projectiles and target thickness in spite of beam energy changes and detector unstabilities. Experimental values for secondary electron yields are also deduced. Results are reported for the thickness variation of thin carbon foils bombarded with carbon ions of energies between 8.95 and 13 MeV. A linear correlation of this variation is found with both, the ion fluence at target and the number of secondary electrons emitted. The correlation exists even though a wide range of beam currents, beam energies and bombarding times was used during the experiment. The measured electron yields show evidence for a change in the emission process between the original foils and the deposited layer, possibly due to a texture change

Treatment of PVC using an alternative low energy ion bombardment procedure

Science.gov (United States)

Rangel, Elidiane C.; dos Santos, Nazir M.; Bortoleto, José Roberto R.; Durrant, Steven F.; Schreiner, Wido H.; Honda, Roberto Y.; Rangel, Rita de Cássia C.; Cruz, Nilson C.

2011-12-01

In many applications, polymers have progressively substituted traditional materials such as ceramics, glasses, and metals. Nevertheless, the use of polymeric materials is still limited by their surface properties. Frequently, selective modifications are necessary to suit the surface to a given application. Amongst the most common treatments, plasma immersion ion implantation (PIII) has attracted the attention of many researchers owing to its versatility and practicality. This method, however, requires a power supply to provide high voltage (tens of kV) negative pulses, with a controlled duty cycle, width and frequency. Owing to this, the implementation of PIII on the industrial scale can become economically inviable. In this work, an alternative plasma treatment that enables low energy ion bombardment without the need of a high voltage pulse generator is presented. To evaluate the efficiency of the treatment of polymers, polyvinylchloride, PVC, specimens were exposed to 5 Pa argon plasmas for 3600 s, at excitation powers, P, of between 10 and 125 W. Through contact angle and atomic force microscopy data, the influence of P on the wettability, surface free energy and roughness of the samples was studied. Surface chemical composition was measured by X-ray photoelectron spectroscopy, XPS. To evaluate the effect of aging under atmospheric conditions, contact angle and XPS measurements were performed one and 1334 days after the treatment. The plasma potential and ion density around the driven electrode were determined from Langmuir probe measurements while the self-bias potential was derived with the aid of an oscilloscope. From these data it was possible to estimate the mean energy of ions bombarding the PVC surface. Chlorine, carbon and oxygen contamination were detected on the surface of the as-received PVC. Upon exposure to the plasma, the proportion of chlorine was observed to decrease while that of oxygen increased. Consequently, the wettability and surface energy

Treatment of PVC using an alternative low energy ion bombardment procedure

International Nuclear Information System (INIS)

Rangel, Elidiane C.; Santos, Nazir M. dos; Bortoleto, José Roberto R.; Durrant, Steven F.; Schreiner, Wido H.; Honda, Roberto Y.; Cássia C Rangel, Rita de; Cruz, Nilson C.

2011-01-01

In many applications, polymers have progressively substituted traditional materials such as ceramics, glasses, and metals. Nevertheless, the use of polymeric materials is still limited by their surface properties. Frequently, selective modifications are necessary to suit the surface to a given application. Amongst the most common treatments, plasma immersion ion implantation (PIII) has attracted the attention of many researchers owing to its versatility and practicality. This method, however, requires a power supply to provide high voltage (tens of kV) negative pulses, with a controlled duty cycle, width and frequency. Owing to this, the implementation of PIII on the industrial scale can become economically inviable. In this work, an alternative plasma treatment that enables low energy ion bombardment without the need of a high voltage pulse generator is presented. To evaluate the efficiency of the treatment of polymers, polyvinylchloride, PVC, specimens were exposed to 5 Pa argon plasmas for 3600 s, at excitation powers, P, of between 10 and 125 W. Through contact angle and atomic force microscopy data, the influence of P on the wettability, surface free energy and roughness of the samples was studied. Surface chemical composition was measured by X-ray photoelectron spectroscopy, XPS. To evaluate the effect of aging under atmospheric conditions, contact angle and XPS measurements were performed one and 1334 days after the treatment. The plasma potential and ion density around the driven electrode were determined from Langmuir probe measurements while the self-bias potential was derived with the aid of an oscilloscope. From these data it was possible to estimate the mean energy of ions bombarding the PVC surface. Chlorine, carbon and oxygen contamination were detected on the surface of the as-received PVC. Upon exposure to the plasma, the proportion of chlorine was observed to decrease while that of oxygen increased. Consequently, the wettability and surface energy

Nano-scale pattern formation on the surface of HgCdTe produced by ion bombardment

Energy Technology Data Exchange (ETDEWEB)

Smirnov, A.B.; Gudymenko, A.I.; Kladko, V.P.; Korchevyi, A.A.; Savkina, R.K.; Sizov, F.F.; Udovitska, R.S. [V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kiev (Ukraine)

2015-08-15

Presented in this work are the results concerning formation of nano-scale patterns on the surface of a ternary compound Hg{sub 1-x}Cd{sub x}Te (x ∝ 0.223). Modification of this ternary chalcogenide semiconductor compound was performed using the method of oblique-incidence ion bombardment with silver ions, which was followed by low-temperature treatment. The energy and dose of implanted ions were 140 keV and 4.8 x 10{sup 13} cm{sup -2}, respectively. Atomic force microscopy methods were used for the surface topography characterization. The structural properties of MCT-based structure was analyzed using double and triple crystal X-ray diffraction to monitor the disorder and strain of the implanted region as a function of processing conditions. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Auger processes in ion-surface collisions

International Nuclear Information System (INIS)

Zampieri, Guillermo.

1985-01-01

Bombardment of solid targets with low-energy noble gas ions can produce Auger electron emission from the target atoms and/or from the projectiles. In the case of Auger emission from the projectile, Auger emission was observed during the bombardment of Na, Mg, Al and Si with Ne + ions. This emission was studied as a function of the energy, incidence angle and charge state of the projectile. From the analysis, it is concluded that the emission originates in the decay in vacuum of excited and reflected Ne atoms, moving outside the surface. Auger emission was not observed during the bombardment of K, V and Ni with Ar + ions; Zr and Cs with Kr + , and Xe + ions, respectively; and Li and Be with He + ions. In the case of Auger emission from the target, studies of certain aspects of the Na, Mg and Al Auger electron emission spectra were made. The results allow to identify two components in the Auger feature, coresponding to two kinds of Auger transition. The total spectra results from the superposition of both kinds of emission. Auger spectra from K obtained during Ar + and K + bombardment of K-implanted Be, Mg, Al and Cu were also analyzed. Similar to the Na, Mg and Al Auger spectra, the K Auger feature is composed of an atomic like peak superimposed on a bandlike structure. Both components correspond to Auger transitions in K atoms with a 3p vacancy, occuring in vacuum and inside the solid, respectively. (M.E.L.) [es

Suppression of self-organized surface nanopatterning on GaSb/InAs multilayers induced by low energy oxygen ion bombardment by using simultaneously sample rotation and oxygen flooding

Science.gov (United States)

Beainy, Georges; Cerba, Tiphaine; Bassani, Franck; Martin, Mickaël; Baron, Thierry; Barnes, Jean-Paul

2018-05-01

Time of flight secondary ion mass spectrometry (ToF-SIMS) is a well-adapted analytical method for the chemical characterization of concentration profiles in layered or multilayered materials. However, under ion beam bombardment, initially smooth material surface becomes morphologically unstable. This leads to abnormal secondary ion yields and depth profile distortions. In this contribution, we explore the surface topography and roughening evolution induced by O2+ ion bombardment on GaSb/InAs multilayers. We demonstrate the formation of nanodots and ripples patterning according to the ion beam energy. Since the latter are undesirable for ToF-SIMS analysis, we managed to totally stop their growth by using simultaneously sample rotation and oxygen flooding. This unprecedented coupling between these two latter mechanisms leads to a significant enhancement in depth profiles resolution.

Enhancement of sp3 hybridized C in amorphous carbon films by Ar ion bombardment and Si incorporation

International Nuclear Information System (INIS)

Jung, Hae-Suk; Park, Hyung-Ho; Mendieta, I.R.; Smith, D.A.

2003-01-01

We report an effective method of increasing the sp 3 hybridization fraction in sputtered amorphous carbon (a-C) film by the combination of Ar ion bombardment and Si incorporation. In the deposition of an a-C film, Ar ion bombardment by controlling the applied bias voltage plays a role in creating high stress in film and causes the local bonding configuration to change to a sp 3 hybridized bond. Simultaneously, the incorporated Si in an a-C network breaks the sp 2 hybridized bonded ring and promotes the formation of a sp 3 hybridized bond. This enhancement of the sp 3 hybridized bonding characteristic is maximized for an a-C film with 23 at. % of Si and 100-150 V of applied bias voltage. In this region, the increase of resistivity, optical band gap, and mechanical hardness of a-C is attributed to the reduction of the sp 2 hybridized bonded ring and increased fraction of the sp 3 hybridized bond. However, at a higher bias voltage above 150 V, the enhancement effect is reduced due to the resputtering and thermally activated reconversion of a sp 3 to a sp 2 hybridized bond

Low energy electron-initiated ion-molecule reactions of ribose analogues

International Nuclear Information System (INIS)

Mozejko, P.

2003-01-01

Recent experiments in which plasmid DNA samples were bombarded with low energy ( 2 O, DNA bases, and sugar-phosphate backbone analogues. To this end, the cyclic molecule tetrahydrofuran, and its derivatives, provide useful models for the sugar-like molecules contained in the backbone of DNA. In addition to LEE induced dissociation by processes such as dissociative electron attachment (DEA), molecules may be damaged by ions and neutral species of non-thermal energies created by LEE in the surrounding environment. In this contribution, we investigate with electron stimulated desorption techniques, LEE damage to films of desoxy-ribose analogues in the presence of various molecular coadsorbates, that simulate changes in local molecular environment. In one type of experiments tetrahydrofuran is deposited onto multilayer O2. A desorbed signal of OH - indicates ion-molecule reactions of the type O - + C 4 H 8 O -> OH - + C 4 H 7 O, where the O - was formed initially by DEA to O 2 . Further electron stimulated desorption measurements for tetrahydrofuran and derivatives adsorbed on H 2 O, Kr, N 2 O and CH 3 OH will be presented and discussed

Optical radiation emitted by a silver surface bombarded by low-energy electrons

International Nuclear Information System (INIS)

Miserey, F.; Lebon, P.; Septier, A.; Trehin, F.; Beaugrand, C.

1975-01-01

Thick silver targets are obtained on flat glass discs by evaporation in a UHV cell (p -10 torr) and their optical coefficients measured by ellipsometry. A field-emission electron gun bombards a limited region of the target, corresponding to the entry pupil of a light spectrometer. Radiation emitted in the domain 250-600nm is analyzed for both normal and parallel polarizations. Spectral distributions of photons are obtained by using a very sensitive counting device including a multi channel analyzer. First experimental results concerning optical radiation generated by 6keV electrons are reported and compared to Transition Radiation and Bremsstrahlung theoretical spectra [fr

Physical principles of the surface plasma method for producing beams of negative ions

International Nuclear Information System (INIS)

Bel'chenko, Yu.I.; Dimov, G.I.; Dudnikov, V.G.

1977-01-01

The processes which are important for the production of intense beams of negative ions from surface plasma sources (SPS) are examined. The formation of negative ions when atomic particles interact with a surface is analyzed on the basis of both experimental results obtained when a surface was bombarded with beams and recently developed theoretical considerations of reflection, scattering, and electron exchange. The characteristic features of these processes in SPS, when a surface is bombarded with intense fluxes of plasma particles, are revealed in special experiments. The characteristics of generation and acceleration of the bombarding particles in a gas discharge SPS plasma, the characteristics of transportation of negative ions through the plasma toward the beam forming system, the role of cesium in SPS, and the characteristics of formation of the intense negative ion beams as well as the removal of parasite electrons from the beam

Radiation effects in zinc oxide: zinc under bombardment with KeV ions

International Nuclear Information System (INIS)

Hastings, J.W.L.

1967-01-01

The energy loss, light output, depth of deterioration and the deterioration constant have been determined as a function of energy for various atomic projectiles impinging upon samples of a powdered Zn:Zn phosphor at energies below 105 KeV. The energy loss was observed as a reduction in the light output when projectiles traversed thin regions of previously damaged phosphor. The energy losses for heavier projectiles ( 14 N, 40 Ar, 84 Kr), relative to hydrogen, were found to be lower than those predicted for an amorphous stopping medium. The light output for a given projectile was found to be approximately proportional to the amount of energy lost in electronic collisions. When a phosphor is subjected to prolonged bombardment by heavy ions the deterioration depth is fairly well defined and its value was determined by a measurement of the energy loss of a hydrogen beam in traversing the damaged region. The depths are very large, are proportional to the projectile velocity and seem to be determined to a significant degree by electronic stopping. The deterioration constant, C, is a measure of the ability of a projectile to deteriorate a phosphor and its value is proportional to the number of defects introduced in unit distance along the trajectory of the projectile. The constant was determined from measurements of the efficiencies η, and η o , of partly damaged and undamaged phosphor, respectively, using the observed relationship, C (η/η o - 1) n -1 where n is the irradiation dose. The relative magnitudes of the C values for 14 N, 40 Ar were found to be in agreement with measured nuclear energy loss cross sections for these projectiles. (author)

Surface temperature measurements for ion-bombarded Si and GaAs at 1.0 to 2.0 MeV

International Nuclear Information System (INIS)

Lowe, L.F.; Kennedy, J.K.; Davies, D.E.; Deane, M.L.; Eyges, L.J.

1975-01-01

Surface temperatures of ion-bombarded silicon and gallium arsenide have been measured using an infrared detector. Ion beams of N + , N + 2 , O + , O + 2 , C + , CO + , and H + were used at energies from 1--2.0 MeV and at current densities up to 12 μAcenter-dotcm/sup -2/. No temperature dependence was found on ion species, energy, or current. The change in temperature depended only on beam power, target material, and sample mounting technique. With proper mounting temperature increases of 20 degreeC for silicon and 65 degreeC for gallium arsenide were observed for a beam power density of 1.0 Wcenter-dotcm/sup -2/

Using MDECR-PECVD to study the impact of ion bombardment energy on microstructural properties of μc-Si:H thin film grown from an SiF{sub 4}/H{sub 2} chemistry

Energy Technology Data Exchange (ETDEWEB)

Wang, Junkang; Florea, Ileana; Bulkin, Pavel V.; Maurice, Jean-Luc; Johnson, Erik V. [LPICM, CNRS, Ecole Polytechnique, Universite Paris Saclay, 91128 Palaiseau (France)

2016-12-15

The matrix-distributed electron cyclotron resonance plasma-enhanced chemical vapor deposition (MDECR-PECVD) technique has been shown to achieve high deposition rates for hydrogenated microcrystalline silicon (μc-Si:H) thin film. Due to the fact that plasma is sustained by a microwave discharge, by biasing the substrate holder with additional power supply, one can achieve independent control over the plasma density and the maximum ion bombardment energy (IBE). In this work, we present studies of the impact of IBE on the microstructural properties of the μc-Si:H film deposited by MDECR-PECVD. Insufficient ion bombardment is found to be responsible for the substantial presence of nano-porous regions within the material, resulting in significant post-deposition oxidation. Good agreement between transmission electron microscopy (TEM) Fresnel contrast analysis and the results of infrared absorption and hydrogen effusion measurements for the deposited films suggest that moderate IBE is of vital importance to achieve high quality μc-Si:H. In doing so, denser films with significantly decreased nano-porous regions and better stability are obtained, which is of great interest to optimize the process parameters for solar cell applications. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Composition profiles of several contaminated and cleaned surfaces of gold thick films on copper plates by Auger electron and secondary ion mass spectroscopies

International Nuclear Information System (INIS)

Komiya, S.; Mizuno, M.; Narusawa, T.; Maeda, H.; Yoshikawa, M.

1974-01-01

Preparation and evaluation of a clean Au film are investigated. Development of a preparation method for obtaining clean surface on a copper shell in the JFT-2a (DIVA) TOKAMAK toroidal vacuum chamber is the aim of the present work. Au films prepared by ion plating and vacuum evaporation have been analysed by a cylindrical mirror Auger electron analyser in combination with a quadrupole mass spectrometer during 2 keV Xe ion bombardment from a sputter ion gun over the whole range of thickness of several microns. Contaminants are found to segregate on the top surface and at the interface. To expose a clean Au surface by the ion bombardment, surface layers within 1000 A had to be removed from the surfaces contaminated by touching with either a naked hand or a nylon glove or covered by a small amount of Ti. Mutual diffusions across the interfaces are also analyzed as a function of the substrate temperature. A Nb sandwich layer inhibites effectively the mutual diffusion. (auth.)

Specimen preparation by ion beam slope cutting for characterization of ductile damage by scanning electron microscopy.

Science.gov (United States)

Besserer, Hans-Bernward; Gerstein, Gregory; Maier, Hans Jürgen; Nürnberger, Florian

2016-04-01

To investigate ductile damage in parts made by cold sheet-bulk metal forming a suited specimen preparation is required to observe the microstructure and defects such as voids by electron microscopy. By means of ion beam slope cutting both a targeted material removal can be applied and mechanical or thermal influences during preparation avoided. In combination with scanning electron microscopy this method allows to examine voids in the submicron range and thus to analyze early stages of ductile damage. In addition, a relief structure is formed by the selectivity of the ion bombardment, which depends on grain orientation and microstructural defects. The formation of these relief structures is studied using scanning electron microscopy and electron backscatter diffraction and the use of this side effect to interpret the microstructural mechanisms of voids formation by plastic deformation is discussed. A comprehensive investigation of the suitability of ion beam milling to analyze ductile damage is given at the examples of a ferritic deep drawing steel and a dual phase steel. © 2016 Wiley Periodicals, Inc.

Anomalous time-of-flight distributions observed for argon implanted in silicon and resputtered by Ar+-ion bombardment

International Nuclear Information System (INIS)

van Veen, G.N.A.; Sanders, F.H.M.; Dieleman, J.; van Veen, A.; Oostra, D.J.; de Vries, A.E.

1986-01-01

A Si substrate is bombarded by 3-keV Ar + ions. From time-of-flight spectra of resputtered Ar neutrals at various target temperatures, we conclude that Ar-bubble formation takes place in the amorphized-Si top layer. The bubbles form and open during etching. The average kinetic energy of the Ar atoms is in agreement with the calculated average potential energy of the Ar atoms inside the bubbles

Low-energy ion bombardment of frozen bacterial spores and its relevance to interplanetary space

Energy Technology Data Exchange (ETDEWEB)

Tuleta, M.; Gabla, L. [Jagiellonian Univ., Institute of Physics, Cracow (Poland); Szkarlat, A. [Clinical Children' s Hospital of the Jagiellonian Univ., Medical College, Lab. of Microbiology, Cracow (Poland)

2005-04-01

The panspermia hypothesis is concerned with the dissemination of life in space in the form of simple micro-organisms. During an interplanetary journey the micro-organisms are subjected to the action of, among others, the solar wind. We have simulated experimentally such conditions bombarding frozen bacterial spores with low-energy hydrogen ions. On the basis of the results obtained and our earlier research, a new look at the panspermia hypothesis is discussed. The general conclusion is that unprotected naked spores, their conglomerates and protected spores can survive attack of the solar wind, although to various degrees. (authors)

Low-energy ion bombardment of frozen bacterial spores and its relevance to interplanetary space

International Nuclear Information System (INIS)

Tuleta, M.; Gabla, L.; Szkarlat, A.

2005-01-01

The panspermia hypothesis is concerned with the dissemination of life in space in the form of simple micro-organisms. During an interplanetary journey the micro-organisms are subjected to the action of, among others, the solar wind. We have simulated experimentally such conditions bombarding frozen bacterial spores with low-energy hydrogen ions. On the basis of the results obtained and our earlier research, a new look at the panspermia hypothesis is discussed. The general conclusion is that unprotected naked spores, their conglomerates and protected spores can survive attack of the solar wind, although to various degrees. (authors)

Light ions cyclotron bombardment to simulate fast neutron radiation damage in nuclear materials

International Nuclear Information System (INIS)

Segura, E.; Lucki, G.; Aguiar, D.

1984-01-01

The applicability and limitations of the use of cyclotron light ions bombardment to simulate the effects of the neutron irradiation are presented. Light ions with energies of about 10 MeV are capable to produce homogeneous damage in specimens suitable for measuring bulk mechanical properties although their low damage rate of 10 -5 dpa.sec -1 limit the dose range to a few dpa. On the other hand, cyclotron alpha particle implantation provides a fast and convenient way of introducing helium with a minimum of side effects so that we can take advantage of this technique to get better understanding of the mechanism by which this insoluble gas produces high temperature embrittlement. Some experimental details such as dimensions and cooling techniques are described. Finally a description of the infrastructure for cyclotron alpha particle implantation and a creep-test facility of the Division of Radiation Damage at IPEN-CNEN/SP are presented. (Author) [pt

L-subshell ionization studies of Au for α-particle and lithium-ion bombardment

International Nuclear Information System (INIS)

Dhal, B.B.; Nandi, T.; Padhi, H.C.; Trautmann, D.

1995-01-01

L-subshell ionization of Au has been investigated for α-particle and lithium-ion bombardments with energies 0.54-1.74 MeV u -1 and 0.65-1.44 MeV u -1 , respectively. Comparison of experimental x-ray production cross sections with the predictions of the ECPSSR and SCA theories shows reasonably good agreement for L α and L β x-rays, whereas for L γ and L γ1+5 the ECPSSR theory underestimates the cross sections by about 60% for both α-particle and lithium-ion impact, and the SCA theory agrees reasonably well. The ECPSSR theory underestimates the L 1 - and L 2 -subshell ionization cross sections and gives good agreement for the L 3 -subshell, whereas the SCA theory overestimates the L 3 -subshell ionization cross sections and gives good agreement for L 1 and L 2 . The experimental data for the total-ionization cross sections are within 25% of the predictions of both the theories. (Author)

Silicon nanodot formation and self-ordering under bombardment with heavy Bi3 ions

International Nuclear Information System (INIS)

Boettger, Roman; Heinig, Karl-Heinz; Bischoff, Lothar; Liedke, Bartosz; Huebner, Rene; Pilz, Wolfgang

2013-01-01

Si nanodots of high density and hexagonal short-range order are observed upon normal-incidence bombardment of hot, crystalline Si with Bi 3 + ions having a kinetic energy of a few tens of keV. The heights of nanodots are comparable to their widths of ∝20 nm. The implanted Bi accumulates in tiny Bi nanocrystals in a thin Si top layer which is amorphous due to implantation damage. Light and heavy ions up to Xe cause smoothing of surfaces, but Bi 3 + ions considered here have a much higher mass. Atomistic simulations prove that each Bi 3 + impact deposits an extremely high energy density resulting in a several nanometer large melt pool, which resolidifies within a few hundreds of picoseconds. Experiments confirm that dot patterns form only if the deposited energy density exceeds the threshold for melting. Comparing monatomic and polyatomic Bi ion irradiation, Bi-Si phase separation and preferential ion erosion are ruled out as driving forces of pattern formation. A model based on capillary forces in the melt pool explains the pattern formation consistently. High-density Si nanodots are formed by polyatomic Bi ion irradiation of hot Si surfaces. Each impact causes local transient melt pools smaller than the dots. Hexagonally ordered patterns evolve by self-organization driven by repeated ion-induced melting of tiny volumes. Homogeneously distributed Bi nanocrystals are found in the a-Si film. These nanocrystals are related to particularities of the Si-Bi phase diagram. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Emission of low-energetic electrons in collisions of heavy ions with solid targets

International Nuclear Information System (INIS)

Lineva, Natallia

2008-07-01

At the UNILAC accelerator, we have initiated a project with the objective to investigate lowenergy electrons, emitted from solid, electrically conductive targets after the impact of swift light and heavy ions. For this purposes, we have installed, optimized, and put into operation an electrostatic toroidal electron spectrometer. First, investigations of electrons, emitted from solid-state targets after the bombardment with a monochromatic electron beam from an electron gun, has been carried out. The proposed method combines the results of the measurements with the results of dedicated Monte Carlo simulations. The method has been elaborated in a case study for carbon targets. The findings have been instrumental for the interpretation of our measurements of electrons emitted in collisions of swift ions with the same carbon targets. Our investigations focused on following ion beams: protons and (H + 3 )-molecules of the same energy, as well as on carbon ions with two different energies. Thin carbon, nickel, argon and gold foils has been used as targets. Electrons in the energy range between 50 eV and 1 keV have been investigated. The measured electron distributions, both integral as well as differential with respect to the polar angle, have been compared to simple standard theories for gases as well as to the results of TRAX simulations, the latter being based on data from gaseous targets. Dedicated TRAX simulations have been performed only for the carbon targets, applying the method mentioned above. Within our experimental uncertainties, we observe a good agreement of the measured and TRAX simulated data. That leads us to the conclusion that - as a first order approximation - the electron emission pattern from ion-atom collisions in solid-state targets and the one from single collisions in gases are similar. (orig.)

EPR study of electron bombarded alkali- and alkaline-earth halide crystal surfaces

Science.gov (United States)

Fryburg, G. C.; Lad, R. A.

1975-01-01

An EPR study of electron bombarded LiF, NaCl, KCl, CaF2 and BaF2 polycrystalline surfaces has shown that small metal particles are formed on the surfaces of the crystals. Identification was made from CESR signals. The symmetric line-shape of the signals, even at 77 K, indicated that the particles were less than 0.5 micron in diameter. Signals due to F centers were observed in LiF but not in the other halides. Implications to metal deposition are considered.

High current density ion source

International Nuclear Information System (INIS)

King, H.J.

1977-01-01

A high-current-density ion source with high total current is achieved by individually directing the beamlets from an electron bombardment ion source through screen and accelerator electrodes. The openings in these screen and accelerator electrodes are oriented and positioned to direct the individual beamlets substantially toward a focus point. 3 figures, 1 table

Electron bombardment fusion and continuous casting of uranium carbide. Fundamental study of the metallurgical and thermal processes; Fusion sous bombardement d'electrons et coulee continue de carbure d'uranium. Etude fondamentale des processus metallurgiques et thermiques

Energy Technology Data Exchange (ETDEWEB)

Trouve, J [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

1968-02-01

During a pilot production run, about 1.200 kg of uranium carbide cylindrical rods were prepared by electron bombardment fusion and continuous casting in an apparatus making it possible to operate in a constant vacuum automatically. In order to make the most of the fusion technique used, it was necessary to resolve a certain number of problems involved in this production. It was found that the energy yield for the electron bombardment heating using accelerating voltages of about 10 kV was 100 per cent; about 40 per cent of the electrons are re-emitted by back-scattering. These electrons leave the surface with practically zero energy. The fusion technique leads to the elimination of the majority of the metallic impurities. In order to explain the variations in the non-metallic impurity contents the different reactions occurring in the molten uranium monocarbide have been determined. A micrographic study of the rods obtained has shown various types of crystallization depending on the rate of casting and, despite the uniaxial symmetry of the cooling, no texture has been observed, whatever the rate of fusion employed. The aspects of the fracture surfaces observed on certain rods can be explained by theory in the domain where the material is elastic. Furthermore it has been shown that a decrease in the brittleness occurs as a result of the formation of fine precipitates of the Wiedmanstatten structure type. (authors) [French] Au cours d'une fabrication pilote, environ 1 200 kg de barreaux cylindriques de carbure d'uranium ont ete prepares par fusion sous bombardement d'electrons et coulee continue dans un appareillage permettant d'operer d'une maniere automatique sous vide constant. Afin de tirer le meilleur parti possible de la technique de fusion utilisee, il importait de repondre a un certain nombre de questions soulevees par cette fabrication. Le rendement energetique du chauffage par bombardement d'electrons pour des tensions acceleratrices de l'ordre de 10 kV a ete

Experimental apparatus to investigate interactions of low energy ions with solid surfaces, 1

International Nuclear Information System (INIS)

Tsukakoshi, Osamu; Narusawa, Tadashi; Mizuno, Masayasu; Sone, Kazuho; Ohtsuka, Hidewo.

1975-12-01

Experimental apparatus to study the surface phenomena has been designed, which is intended to solve the vacuum wall problems in future thermonuclear fusion reactors and large experimental tokamak devices. An ion source and the beam transport optics are provided for bombarding solid target surface with an ion beam of energy from 0.1 to 6 keV. Measuring instruments include an ion energy analyser, a quadrupole mass spectrometer, an Auger electron spectrometer, an electro-micro-balance, a neutral particle energy spectrometer and its calibration system. Pumping system consists of oil-free ultrahigh vacuum pumps. Various kinds of experiments will be carried out by using the apparatus: 1) sputtering by low energy ion bombardment, 2) re-emission of the incident particles during and after ion bombardment, 3) release of adsorbed and occluded gases in the solids by ion bombardment, and 4) backscattering of fast ions. The combinations of measuring instruments for each experiment and their relative positions in the vacuum chamber are described through detailed drawings. The fundamental aspect in design of the ion beam transport optics for a low energy ion beam which can no longer neglect the space charge effect is also discussed. (auth.)

Charge generation and trapping in bisphenol-A-polycarbonate/N-isopropylcarbazole mixture: A study by electron bombardment-induced conductivity

International Nuclear Information System (INIS)

Santos, S.; Caraballo, D.

2007-01-01

Electron bombardment-induced conductivity measurements were carried out on cast films of N-isopropylcarbazole (NIPC) dispersed into an amorphous matrix of bisphenol-A-polycarbonate. The charge generation was studied by estimating the hole yield (g), the fraction of charge escaping recombination, as a function of electric field and concentration of NIPC at room temperature. The hole yield, besides increasing by increasing the content of NIPC, was observed to increase with the electric field in the manner predicted by the Onsager theory of geminate recombination. Deep trapping levels were studied by filling under electron bombardment and observing transients. The deep traps were neutral in nature with a concentration on the order of 8.0x10 14 cm -3 , which was low enough not to degrade transport under normal conditions

Ion-Ion Plasmas Produced by Electron Beams

Science.gov (United States)

Fernsler, R. F.; Leonhardt, D.; Walton, S. G.; Meger, R. A.

2001-10-01

The ability of plasmas to etch deep, small-scale features in materials is limited by localized charging of the features. The features charge because of the difference in electron and ion anisotropy, and thus one solution now being explored is to use ion-ion plasmas in place of electron-ion plasmas. Ion-ion plasmas are effectively electron-free and consist mainly of positive and negative ions. Since the two ion species behave similarly, localized charging is largely eliminated. However, the only way to produce ion-ion plasmas at low gas pressure is to convert electrons into negative ions through two-body attachment to neutrals. While the electron attachment rate is large at low electron temperatures (Te < 1 eV) in many of the halogen gases used for processing, these temperatures occur in most reactors only during the afterglow when the heating fields are turned off and the plasma is decaying. By contrast, Te is low nearly all the time in plasmas produced by electron beams, and therefore electron beams can potentially produce ion-ion plasmas continuously. The theory of ion-ion plasmas formed by pulsed electron beams is examined in this talk and compared with experimental results presented elsewhere [1]. Some general limitations of ion-ion plasmas, including relatively low flux levels, are discussed as well. [1] See the presentation by D. Leonhardt et al. at this conference.

Study of the electronic structure of pure aluminium, aluminium oxide and nitride by spectroscopy of electrons excited under electronic and photonic bombardment (X and UV)

International Nuclear Information System (INIS)

Gautier-Soyer, Martine

1985-01-01

This research thesis reports the use of electron spectroscopy with electrons excited under electronic or photonic (X or UV) bombardment for the study of electronic state density of aluminium, aluminium oxide (Al 2 O 3 ) and aluminium nitride (AlN). The objective is to get an insight into phenomena related to technological problems of adherence, wear, lubrication, corrosion or breakdown met in metals, insulators and semiconductors. The author highlighted the presence of occupied surface states on Al(111) and Al(100), and electronic levels localised in the forbidden band of Al 2 O 3 and AlN, induced by structural defects which promote surface reactivity [fr

Heavy-ion induced secondary electron emission from Mg, Al, and Si partially covered with oxygen

International Nuclear Information System (INIS)

Weng, J; Veje, E.

1984-01-01

We have bombarded Mg, Al, and Si with 80 keV Ar + ions and measured the secondary electron emission yields at projectile incidence angles from 0 0 to 85 0 , with oxygen present at the target as well as under UHV conditions. The total secondary electron emission yields are found to depend fairly much on the amount of oxygen present. The three elements studied show relatively large individual variations. For all three elements, and with as well as without oxygen present, the relative secondary electron emission yield is observed to vary as 1/cos v, where v is the angle of incidence of the projectiles. This seems to indicate that the secondary electron production is initiated uniformly along the projectile path in the solid, in a region close to the surface. The results are discussed, and it is tentatively suggested, that the increase in secondary electron emission, caused by the presence of oxygen, originates from neutralization of sputtered oxygen, which initially is sitting as O 2- ions. (orig.)

Evaluation of electon and nuclear bremsstrahlung in heavy ion collisions

International Nuclear Information System (INIS)

Gippner, P.

1975-01-01

The detection of quasimolecular X-ray continua provides the possibility of investigating the electron shells of quasimolecules transiently formed during adiabatic heavy ion-atomic collision. The contribution of the electron and nuclear bremsstrahlung to quasimolecular X-ray continua observed in bombarding various targets with 65 and 96 MeV Nb ions were estimated

Damage and redistribution of impurities by ionic bombardment

International Nuclear Information System (INIS)

Tognetti, N.P.

1982-01-01

Some aspects of displacement collisions in solids bombarded with ions in the medium energy range have been studied using the backscattering and channelling techniques. The production of lattice damage and the spatial redistribution of atoms within the collision cascade were the two main effects considered and experimentally studied. A comprehensive study of disorder production in GaAs was carried out at 40 K for a variety of ions and ion energies, providing insight into the mechanisms of damage generation from both the macro and microscopic points of view. Experiments on thermal recovery of partially disordered substrates revealed that annealing occurs from approximately 100 K to 300 K. A direct procedure developed for the obtainment of damage profiles from backscattering-channelling measurements is described. The net spatial redistribution of displaced atoms, in combined impurity-matrix substrates was studied and compared with existing theories of ion beam mixing. The Ag-Si system was studied for a wide range of fluence of bombarding Ar + ions. Furthermore, the contribution of atomic mixing in the experimental observation of Ge implantation at high doses into Si is discussed. (M.E.L) [es

Effect of Ar ion on the surface properties of low density polyethylene

Science.gov (United States)

Zaki, M. F.

2016-04-01

In this paper, low-density polyethylene (LDPE) was irradiated by argon ion with different fluences up to 1015ions/cm2. The optical, chemical and hardness properties have been investigated using UV-Vis spectroscopy, Fourier transform infrared spectroscopy (FTIR), scanning electron microscope (SEM) and micro-indentation tester, respectively. The results showed the ion beam bombardment induced decreases in the transmittance of the irradiated polymer samples. This change in transmittance can be attributed to the formation of conjugated bonds i.e. possible formation of defects and/or carbon clusters. The indirect optical band gap decreased from 3.0 eV for the pristine sample to 2.3 eV for that sample irradiated with the highest fluence of the Ar ion beam. Furthermore, the number of carbon atoms and clusters increased with increasing Ar ion fluences. FTIR spectra showed the formation of new bands of the bombarded polymer samples. Furthermore, polar groups were created on the surface of the irradiated samples which refer to the increase of the hydrophilic nature of the surface of the irradiated samples. The Vicker's hardness increased from 4.9 MPa for the pristine sample to 17.9 MPa for those bombarded at the highest fluence. This increase is attributed to the increase in the crosslinking and alterations of the bombarded surface into hydrogenated amorphous carbon, which improves the hardness of the irradiated samples. The bombarded LDPE surfaces may be used in special applications to the field of the micro-electronic devices and shock absorbers.

Influence of helium-ion bombardment on the surface properties of pure and ammonia-adsorbed water thin films

International Nuclear Information System (INIS)

Kondo, M.; Shibata, T.; Kawanowa, H.; Gotoh, Y.; Souda, R.

2005-01-01

The influence of the ion bombardment on the surface properties of water-ice films has been investigated. The films are irradiated with 1.5 keV He + ions and analyzed sequentially on the basis of time-of-flight secondary-ion mass spectrometry (TOF-SIMS). In order to minimize any temperature-induced effects, the measurements were made at 15 K. The damage of the films, as estimated from the H/D exchange between NH 3 and the D 2 O ice and the intermixing of NH 3 with the H 2 18 O ice, is recognized at the fluence above 2 x 10 14 ions/cm 2 . The sputtering yield of the D 2 O ice is determined as 0.9 ± 0.2 molecules per incoming He + ion. The temperature-programmed TOF-SIMS analysis of the water-ice films has been completed within the fluence of 5.8 x 10 12 ions/cm 2 , so that no appreciable damage of the film should be induced during the measurement

Push-and-stick mechanism for charged and excited small cluster emission under ion bombardment

International Nuclear Information System (INIS)

Bitensky, I.S.; Parilis, E.S.; Wojciechowski, I.A.

1992-01-01

The mechanism for the formation, excitation and ionization of small clusters emitted under ion bombardment is discussed. It is shown that the increased degree of ionization for the transition metal dimers, trimers and tetramers can be explained by the existence of an additional effective channel for their formation, namely the associative ionization process. A simple estimate shows that the sticking together of a fast cascade atom and the pushed out surface atom is 30-40 times more effective for dimer formation, than the recombination of two fast atoms. This push-and-stick mechanism of cluster formation could also be effective for the formation of trimers and tetramers. (orig.)

Secondary electron emission of thin carbon foils under the impact of hydrogen atoms, ions and molecular ions, under energies within the MeV range

International Nuclear Information System (INIS)

Vidovic, Z.

1997-06-01

This work focuses on the study of the emission statistics of secondary electrons from thin carbon foils bombarded with H 0 , H 2 + and H 3 + projectiles in the 0.25-2.2 MeV energy range. The phenomenon of secondary electron emission from solids under the impact of swift ions is mainly due to inelastic interactions with target electrons. The phenomenological and theoretical descriptions, as well as a summary of the main theoretical models are the subject of the first chapter. The experimental set-up used to measure event by event the electron emission of the two faces of a thin carbon foil traversed by an energetic projectile is described in the chapter two. In this chapter are also presented the method and algorithms used to process experimental spectra in order to obtain the statistical distribution of the emitted electrons. Chapter three presents the measurements of secondary electron emission induced by H atoms passing through thin carbon foils. The secondary electron yields are studied in correlation with the emergent projectile charge state. We show the peculiar role of the projectile electron, whether it remains or not bound to the incident proton. The fourth chapter is dedicated to the secondary electron emission induced by H 2 + and H 3 + polyatomic ions. The results are interpreted in terms of collective effects in the interactions of these ions with solids. The role of the proximity of the protons, molecular ion fragments, upon the amplitude of these collective effects is evidenced from the study of the statistics of forward emission. These experiences allowed us to shed light on various aspects of atom and polyatomic ion inter-actions with solid surfaces. (author)

Use of positive ion fast atom bombardment mass spectrometry for rapid identification of a bile alcohol glucuronide isolated from cerebrotendinous xanthomatosis patients

International Nuclear Information System (INIS)

Dayal, B.; Salen, G.; Tint, G.S.; Shefer, S.; Benz, S.W.

1990-01-01

The identification of a major biliary and plasma bile alcohol glucuronide, 5 beta-cholestane-3 alpha, 7 alpha, 12 alpha, 25-tetrol-3-0-beta-D-glucuronide, present in cerebrotendinous xanthomatosis (CTX) patients, was investigated by positive ion fast atom bombardment mass spectrometry (FAB-MS). The spectrum was characterized by abundant ions formed by attachment of a proton, [M + H]+, or of alkali ions, [M + Na]+ and [M + 39K]+, to the glucuronide salt. These ions allowed an unambiguous deduction of the molecular weight of the sample. It is suggested that FAB-MS could be used in the rapid diagnosis of CTX

Diamond-like carbon prepared by pulsed laser deposition with ion bombardment: physical properties

Science.gov (United States)

Písařík, P.; Mikšovský, J.; Remsa, J.; Zemek, J.; Tolde, Z.; Jelínek, M.

2018-01-01

Diamond-like carbon (DLC) and titanium-doped DLC thin films were prepared by unique hybrid system consisting of pulsed laser deposition, ion source (bombardment) and magnetron sputtering. The influence of deposition parameters (ion energies, deposition pressures and magnetron power) on composition and physical properties was studied. Composition and sp 3/ sp 2 ratio were determined by XPS. sp 3/ sp 2 ratio was in the range from 1.4 to 2.2 for undoped DLC and from 3.4 to 4.8 for Ti-DLC. AFM showed that the layers were smooth, but with small amounts of random droplets. The measurements of the contact angle and determination of surface free energy were made for water, diiodomethane and ethylene glycol. Hardness and reduced Young's modulus varied from 20 to 31 GPa and from 182 to 276 GPa, respectively. Film adhesion was determined by scratch test; L C3 reached 23 N for DLC and 27 N for TiDLC. Optimization of sp 3/ sp 2 ratio, hardness and adhesion to biomedical alloys will advance the DLC coatings usability in the field of implantology.

Ion-beam bombardment induced texture in nickel substrates for coated high-Tc superconductors

International Nuclear Information System (INIS)

Wang, S S; Wu, K; Zhou, Y; Godfrey, A; Meng, J; Liu, M L; Liu, Q; Liu, W; Han, Z

2003-01-01

Biaxially textured metal substrates are often used for making YBa 2 Cu 3 O 7-x coated conductors with high critical current density. Generally, specific rolling and high-temperature annealing procedures are required to obtain the biaxial texture for metal substrates. Here, we report on a new method for developing strongly biaxially textured grain structure in rolled nickel tape by argon ion-beam bombardment. X-ray diffraction (XRD) θ-2θ scans have shown that a (200) diffraction peak intensity of the Ni foil processed by ion-beam structure modification (ISM) is two orders of magnitude greater than that of cold-rolled foil, while the (111) and (220) intensities are very weak. In the ISM processed Ni foils, from the rocking curve, the full width at half maximum (FWHM) value of the (200) peak has been found to be less than 5.9 deg., whilst the in-plane FWHM obtained from a pole figure analysis is just 8 deg. We discuss the possible mechanisms leading to the texture changes during ISM. (rapid communication)

Influence of both ion bombardment and chemical treatment processes on the electrical conductivity of PVC/poly aniline composites

International Nuclear Information System (INIS)

Gad, E.A.M.; Ashour, A.H.; Abdel-Hamid, H.M.; Sayed, W.M.

1999-01-01

In this article the changes in the electrical conductivity of PVC/poly aniline composites, as temperature consecutively increases, have been measured. The measurement were taken with correspondence to a control series of the composites under two processes:A. Composite samples bombarded with Ar + ions with fluence 2.44 x 10 13 beam ions /cm 2 ., sec 4 of 4 ke V beam energy where argon atoms can induce defects in the surface layer take place. Composite samples treated chemically with concentrated H 2 SO 4 as dopant which reacts with nitrogen atom in aniline. The measurements were also, done with the composites as the ratio of poly(aniline) stepped upward

Ion peening and stress relaxation induced by low-energy atom bombardment of covalent solids

International Nuclear Information System (INIS)

Koster, Monika; Urbassek, Herbert M.

2001-01-01

Using molecular-dynamics simulation, we study the buildup and relaxation of stress induced by low-energy (≤150 eV) atom bombardment of a target material. The effect is brought out most clearly by using an initially compressed specimen. As target material, we employ Si, based on the Tersoff potential. By varying the bond strength in the potential, we can specifically study its effect on damage production and stress changes. We find that in general, stress is relaxed by the atom bombardment; only for low bombarding energies and strong bonds, atom bombardment increases stress. We rationalize this behavior by considering the role of energized atoms and of recoil-implanted target atoms

Hydrogen pumping and release by graphite under high flux plasma bombardment

International Nuclear Information System (INIS)

Hirooka, Y.; Leung, W.K.; Conn, R.W.; Goebel, D.M.; Labombard, B.; Nygren, R.; Wilson, K.L.

1988-01-01

Inert gas (helium or argon) plasma bombardment has been found to increase the surface gas adsorptivity of isotropic graphite (POCO-graphite), which can then getter residual gases in a high vacuum system. The inert gas plasma bombardment was carried out at a flux ∼ 1 x 10 18 ions s -1 cm -2 to a fluence of the order of 10 21 ions/cm 2 and at temperatures around 800 degree C. The plasma bombarding energy was varied between 100 and 200 eV. The gettering speed of the activated graphite surface is estimated to be as large as 25 liters s -1 cm -2 at total pressures between 10 -6 and 10 -7 torr. The gettering capacity estimated is 0.025 torr-liter/cm 2 at room temperature. The gettering capability of graphite can be easily recovered by repeating inert gas plasma bombardment. The activated graphite surface exhibits a smooth, sponge-like morphology with significantly increased pore openings, which correlates with the observed increase in the surface gas adsorptivity. The activated graphite surface has been observed to pump hydrogen plasma particles as well. From calibrated H-alpha measurements, the dynamic hydrogen retention capacity is evaluated to be as large as 2 x 10 18 H/cm 2 at temperatures below 100 degree C and at a plasma bombarding energy of 300 eV

A high resolution EELS study of free-carrier variations in H2+/H+ bombarded (100)GaAs

International Nuclear Information System (INIS)

Dubois, L.H.; Schwartz, G.P.

1984-01-01

High resolution electron energy loss spectroscopy (EELS) has been used to examine whether thermal recovery of the near-surface free-carrier concentration in Te-doped (100) GaAs is accomplished following low energy (250--1500 eV) hydrogen ion bombardment. For hydrogen ion impact energies below 500 eV, the nominal bulk free-carrier density is recovered by annealing at 725 K for 2 h. For comparable ion doses, the net free-carrier concentration decreases monotonically at higher impact energies under similar annealing conditions. The threshold for damage retention occurs close to the value of transmitted energy which is necessary to create either a Ga or an As interstitial point defect

Carbon nitride films synthesized by NH3-ion-beam-assisted deposition

International Nuclear Information System (INIS)

Song, H.W.; Cui, F.Z.; He, X.M.; Li, W.Z.; Li, H.D.

1994-01-01

Carbon nitride thin film films have been prepared by NH 3 -ion-beam-assisted deposition with bombardment energies of 200-800 eV at room temperature. These films have been characterized by transmission electron microscopy. Auger electron spectroscopy and x-ray photoelectron spectroscopy for chemical analysis. It was found that the structure of the films varied with the bombardment energy. In the case of 400 eV bombardment, the tiny crystallites immersed on an amorphous matrix were identified to be β-C 3 N 4 . X-ray photoelectron spectroscopy indicated that some carbon atoms and nitrogen atoms form unpolarized covalent bonds in these films. (Author)

Elementary processes in plasma-surface interactions with emphasis on ions

International Nuclear Information System (INIS)

Zalm, P.C.

1985-01-01

Elementary processes occurring at solid surfaces immersed in low pressure plasmas are reviewed. In particular mechanisms leading to anisotropic or directional etching are discussed. The crucial role of ion bombardment is emphasized. First a brief summary of the interaction of (excited) neutrals, ions and electrons with targets is given. Next various aspects of sputter-etching with noble gas and reactive ions are surveyed. Finally it will be argued that synergistic effects, invoked by ion bombardment of a surface under simultaneous exposure to a reactive gas flux, are foremost important in explaining anisotropic plasma etching. It is shown that the role of the ions is not merely to stimulate the chemical reaction path but rather that the active gas flow chemically enhances the sputtering. (author)

Electron Stimulated Desorption of Condensed Gases on Cryogenic Surfaces

CERN Document Server

Tratnik, H; Hilleret, Noël

2005-01-01

In ultra-high vacuum systems outgassing from vacuum chamber walls and desorption from surface adsorbates are usually the factors which in°uence pressure and residual gas composition. In particular in beam vacuum systems of accelerators like the LHC, where surfaces are exposed to intense synchro- tron radiation and bombardment by energetic ions and electrons, properties like the molecular desorption yield or secondary electron yield can strongly in°uence the performance of the accelerator. In high-energy particle accelerators operating at liquid helium temperature, cold surfaces are exposed to the bombardment of energetic photons, electrons and ions. The gases released by the subsequent desorption are re-condensed on the cold surfaces and can be re-desorbed by the impinging electrons and ions. The equilibrium coverage reached on the surfaces exposed to the impact of energetic particles depends on the desorption yield of the condensed gases and can a®ect the operation of the accelerator by modifying th...

Quantification of steroid conjugates using fast atom bombardment mass spectrometry

International Nuclear Information System (INIS)

Gaskell, S.J.

1990-01-01

Fast atom bombardment/mass spectrometry or liquid secondary ion mass spectrometry provides the capability for direct analysis of steroid conjugates (sulfates, glucuronides) without prior hydrolysis or derivatization. During the analysis of biologic extracts, limitations on the sensitivity of detection arise from the presence of co-extracted material which may suppress or obscure the analyte signal. A procedure is described for the quantitative determination of dehydroepiandrosterone sulfate in serum which achieved selective isolation of the analyte using immunoadsorption extraction and highly specific detection using tandem mass spectrometry. A stable isotope-labeled analog [( 2H2]dehydroepiandrosterone sulfate) was used as internal standard. Fast atom bombardment of dehydroepiandrosterone sulfate yielded abundant [M-H]- ions that fragmented following collisional activation to give HSO4-; m/z 97. During fast atom bombardment/tandem mass spectrometry of serum extracts, a scan of precursor ions fragmenting to give m/z 97 detected dehydroepiandrosterone sulfate and the [2H2]-labeled analog with a selectivity markedly superior to that observed using conventional mass spectrometry detection. Satisfactory agreement was observed between quantitative data obtained in this way and data obtained by gas chromatography/mass spectrometry of the heptafluorobutyrates of dehydroepiandrosterone sulfate and [2H2]dehydroepiandrosterone sulfate obtained by direct derivatization. 21 refs

Neutralized ion beam modification of cellulose membranes for study of ion charge effect on ion-beam-induced DNA transfer

Science.gov (United States)

Prakrajang, K.; Sangwijit, K.; Anuntalabhochai, S.; Wanichapichart, P.; Yu, L. D.

2012-02-01

Low-energy ion beam biotechnology (IBBT) has recently been rapidly developed worldwide. Ion-beam-induced DNA transfer is one of the important applications of IBBT. However, mechanisms involved in this application are not yet well understood. In this study plasma-neutralized ion beam was applied to investigate ion charge effect on induction of DNA transfer. Argon ion beam at 7.5 keV was neutralized by RF-driven plasma in the beam path and then bombarded cellulose membranes which were used as the mimetic plant cell envelope. Electrical properties such as impedance and capacitance of the membranes were measured after the bombardment. An in vitro experiment on plasmid DNA transfer through the cellulose membrane was followed up. The results showed that the ion charge input played an important role in the impedance and capacitance changes which would affect DNA transfer. Generally speaking, neutral particle beam bombardment of biologic cells was more effective in inducing DNA transfer than charged ion beam bombardment.

Study of clean and ion bombardment damaged silver single crystal surfaces by work function measurements

International Nuclear Information System (INIS)

Chelvayohan, N.

1982-06-01

Work function values of the (110), (100) and (111) faces of silver single crystal were measured by the photoelectric emission method and found to be 4.14 +- 0.04 eV, 4.22 +-0.04 eV and 4.46 +- 0.02 eV respectively. Oxygen adsorption on the faces were studied by surface potential measurement. Strong oxygen adsorption was observed on (110) and (100) faces, whereas the (111) face was found to be inert for oxygen adsorption. Oxygen adsorption on the (111) face damaged by argon ion bombardment was also investigated. The above results were compared with those of early reported work function and oxygen adsorption values. (U.K.)

Recovery of 201Tl by ion exchange chromatography from proton bombarded thallium cyclotron targets

International Nuclear Information System (INIS)

Walt, T.N. van der; Naidoo, C.

2000-01-01

A method based on ion exchange chromatography is presented for the recovery of 201 Tl and its precursor 201 Pb from proton bombarded natural thallium cyclotron targets. After bombardment the target is dissolved in diluted nitric acid. Water, hydrazine and ammonium acetate are added to the solution and the lead radioisotopes separated from the thallium by cation exchange chromatography on a Bio-Rex 70 column. The sorbed lead radioisotopes are eluted with dilute nitric acid and the separation repeated on a second Bio-Rex 70 column. After elution of the remaining thallium the column is left for 32 hours and the 201 Tl formed by decay of 201 Pb is eluted with an ammonium acetate solution. The 201 Tl eluate is acidified with a HNO 3 -HBr-Br 2 mixture and the resulting solution is passed through an AG MP-1 anion exchanger column to remove any remaining lead isotopes. The 201 Tl is eluted with a hydrazine solution, the eluate evaporated to dryness and the 201 Tl finally dissolved in an appropriate solution to produce a 201 TlCl solution suitable for medical use. A high quality 201 Tl product is obtained containing ≤ 0.1 μg of Tl/mCi (37 MBq) 201 Tl. The radionuclidic impurities are less than the maximum values specified by the US Pharmacopoeia and the British Pharmacopoeia. (orig.)

Comparison of electron ionization and fast atom bombardment-mass spectrometry for the determination of nickel, vanadyl and free-base porphyrins

Energy Technology Data Exchange (ETDEWEB)

Castro, A.J.; Van Berkel, G.J.; Doolittle, F.G.; Filby, R.H. (Washington State Univ., Pullman (USA))

1989-01-01

Fast Atom Bombardment-Mass Spectrometry (FAB-MS) and Electron Ionization-Mass Spectrometry (EI-MS) at 12 and 70 eV, were used to obtain mass spectra of mesoporphyrin IX dimethylester (DME), tetraphenylporphyrin (TPP), octaethylporphyrin (OEP), and the metal-loporphyrins, Ni(DME), Ni(TPP), Ni(OEP), VO(TPP), VO(OEP), as well as a VO(II) porphyrin concentrate obtained from the New Albany oil shale bitumen (Mississippian-Devonian). A mixture of dithiothreitol/dithioerythritol (Magic Bullet) was used as the FAB matrix. Greater fragmentation of free-base and metalloporphyrins was observed in FAB mass spectra compared to the EI mass spectra. Adduct ions formed by addition of sulfur and a matrix molecule to the porphyrins were observed. In FAB spectra of the VO(II) complexes, loss of oxygen was noted. The FAB mass spectra of mixtures of VO(II) geoporphyrins are much more complex than corresponding EI mass spectra because of the greater fragmentation and the multiplicity of ions (M{sup +}, M + H, M + 2H, etc.) observed in the FAB mode. Using the matrices investigated, FAB is less suitable for EI for the mass spectrometric analysis of the geoporphyrins.

Generation of H-, D- ions on composite surfaces with application to surface/plasma ion source systems

International Nuclear Information System (INIS)

Hiskes, J.R.; Karo, A.M.; Wimmer, E.; Freeman, A.J.; Chubb, S.R.

1983-01-01

We review some salient features of the experimental and theoretical data pertaining to hydrogen negative ion generation on minimum-work-function composite surfaces consisting of Cs/transition metal substrates. Cesium or hydrogen ion bombardment of a cesium-activated negatively-biased electrode exposed to a cesium-hydrogen discharge results in the release of hydrogen negative ions. These ions originate through desorbtion of hydrogen particles by incident cesium ions, desorbtion by incident hydrogen ions, and by backscattering of incident hydrogen. Each process is characterized by a specific energy and angular distribution. The calculation of ion formation in the crystal selvage region is discussed for different approximations to the surface potential. An ab initio, all-electron, local density functional model for the composite surface electronics is discussed

Effect of Ar bombardment on the electrical and optical properties of ...

Indian Academy of Sciences (India)

The influence of low-energy Ar ion beam irradiation on both electrical and optical properties of low-density polyethylene (LDPE) films is presented. The polymer films were bombarded with 320 keV Ar ions with fuences up to 1 × 10 15 cm − 2 . Electrical properties of LDPE films were measured and the effect of ion ...

A comparison of atom and ion induced SSIMS - evidence for a charge induced damage effect in insulator materials

International Nuclear Information System (INIS)

Brown, A.; Berg, J.A. van den; Vickerman, J.C.

1985-01-01

A static secondary ion mass spectrometry (SSIMS) study of two very low conductivity materials, polystyrene and niobium pentoxide, using on the one hand a primary ion beam with electron neutralisation, and on the other, atom bombardment, shows that whilst the initial spectra obtained were quite similar, subsequent damage effects were much greater under ion impact conditions. For an equivalent flux density the half-life of the polystyrene surface structure was four times longer under atom bombardment. Significant reduction of the niobium surface was observed under ion bombardment whereas an equivalent atom flux had little apparent effect on the surface oxidation state. These data suggest that the requirement to dissipate the charge delivered to the sample by the primary ion beam contributes significantly to the damage mechanisms in electrically insulating materials. (author)

Production of C, N, O, and Ne ions by pulsed ion source and acceleration of these ions in the cyclotron

International Nuclear Information System (INIS)

Nakajima, Hisao; Kohara, Shigeo; Kageyama, Tadashi; Kohno, Isao

1977-01-01

The heavy ion source, of electron bombarded hot cathode type, is usually operated by applying direct current for arc discharge. In order to accelerate Ne 6+ ion in the cyclotron, a pulsed operation of this source was attempted. Ne 6+ and O 6+ ions were accelerated successfully up to 160 MeV and more than 0.1 μA of these ion were extracted from the cyclotron. C 5+ , Ne 7+ and 22 Ne 6+ ions were also extracted with a modest intensity of beam. The intensity of C 4+ , N 4+ , N 5+ , and O 5+ ions was increased about ten times. (auth.)

Sputtering of solid nitrogen by keV helium ions

DEFF Research Database (Denmark)

Ellegaard, O.; Schou, Jørgen; Sørensen, H.

1993-01-01

Solid nitrogen has become a standard material among the frozen molecular gases for electronic sputtering. We have combined measurements of sputtering yields and energy spectra from nitrogen bombarded by 4-10 keV helium ions. The data show that the erosion is electronic rather than knockon...

Programme and abstracts of the seventh International Conference on Ion Implantation and other Applications of Ions and Electrons (ION 2008)

International Nuclear Information System (INIS)

2008-01-01

The conference is organized on the biennial basis by the Institute of Physics, Maria Curie-Sklodowska University, Lublin in cooperation with the Wroclaw University of Technology and Technical University of Lublin. This biennial conferences has created a unique opportunity for scientists from Eastern and Western Europe together with their Polish colleagues, to discuss in a most agreeable environment, some of the fundamental questions in their field and develop new perspectives through the mutual exchange of ideas. ION 2008 has been focused mainly on ion implantation, a powerful tool for the modification of the subsurface layers of solid materials. Although the technique has been in use in the electronic industry for a few decades, there still remain many phenomena involved in the implantation process that are not well understood and are of considerable interest, for both fundamental science and also for new developments in applied materials science. One can highlight, in particular, mechanisms of ion energy loss in the bombarded material, creation of radiation defects, the formation of latent tracks, and many other phenomena that researchers are now intensively investigating. An improved understanding of such processes is essential for the effective application of analytical techniques like RBS, ERD, SIMS, PIPE and others

Ion-beam mixing and tribology of Fe/B multilayers

International Nuclear Information System (INIS)

Hu, R.; Rehn, L.E.; Baldo, P.M.; Fenske, G.R.

1990-01-01

This paper reports the interdiffusion of Fe and B trilayer specimens during 1-MeV Kr + bombardment studied using Rutherford backscattering and electron microscopy. The square of the interdiffusion distance during mixing at 300 degrees C was found to depend linearly on the irradiation dose. Arrhenius behavior with an apparent activation enthalpy of 0.7 eV was observed for the mixing between 200 and 500 degrees C. Electron microscopy of ion-beam mixed multilayer specimens revealed that two crystalline compounds, Fe 2 B and Fe 3 B, formed during bombardment at 450 degrees C, while two different amorphous Fe/B phases formed at 300 degrees C. Substantially improved adhesion and reduced friction were observed for Fe/B multilayers ion-beam mixed onto M50 steel substrates at 450 degrees C

Dependence of secondary electron emission on the incident angle and the energy of primary electrons bombarding bowl-structured beryllium surfaces

International Nuclear Information System (INIS)

Kawata, Jun; Ohya, Kaoru.

1994-01-01

A Monte Carlo simulation of the secondary electron emission from beryllium is combined with a model of bowl structure for surface roughness, for analyzing the difference between the electron emissions for normal and oblique incidences. At normal incidence, with increasing the roughness parameter H/W, the primary energy E pm at which the maximum electron yield occurs becomes higher, and at more than the E pm , the decrease in the yield is slower; where H and W are the depth and width of the bowl structure, respectively. The dispersion of incident angle to the microscopic surface causes a small increase in the yield at oblique incidence, whereas the blocking of primary electrons from bombarding the bottom of the structure causes an opposite trend. The strong anisotropy in the polar angular distribution with respect to the azimuthal angle is calculated at oblique incidence. (author)

Diffusion processes in bombardment-induced surface topography

International Nuclear Information System (INIS)

Robinson, R.S.

1984-01-01

A treatment is given of the problem of surface diffusion processes occurring during surface topography development, whenever a surface is simultaneously seeded with impurities and ion bombarded. The development of controllable topography and the importance of surface diffusion parameters, which can be obtained during these studies, are also analyzed. 101 refs.; 7 figs.; 2 tabs

Energy dependence of angular distributions of sputtered particles by ion-beam bombardment at normal incidence

International Nuclear Information System (INIS)

Matsuda, Yoshinobu; Ueda, Yasutoshi; Uchino, Kiichiro; Muraoka, Katsunori; Maeda, Mitsuo; Akazaki, Masanori; Yamamura, Yasunori.

1986-01-01

The angular distributions of sputtered Fe-atoms were measured using the laser fluorescence technique during Ar-ion bombardment for energies of 0.6, 1, 2 and 3 keV at normal incidence. The measured cosine distribution at 0.6 keV progressively deviated to an over-cosine distribution at higher energies, and at 3 keV the angular distribution was an overcosine distribution of about 20 %. The experimental results agree qualitatively with calculations by a recent computer simulation code, ACAT. The results are explained by the competition between surface scattering and the effects of primary knock-on atoms, which tend to make the angular distributions over-cosine and under-cosine, respectively. (author)

Damage structure in Nimonic PE16 alloy ion bombarded to high doses and gas levels

International Nuclear Information System (INIS)

Farrell, K.; Packan, N.H.

1981-01-01

The Nimonic PE16 alloy in solution-treated-and-aged condition was bombarded simultaneously with nickel ions and α and deuteron beams at 625 0 C to doses of 80 to 313 dpa at He/dpa = 10 and D/dpa = 25. Microstructural changes consisted of the introduction of dislocations and of cavities, and the redistribuion of γ' precipitates to these defects. Cavitational swelling remained below 1%. Cavities were represented by several distinct size classes, the smaller ones believed to be gas bubbles, and some larger ones associated with preferred growth of precipitate. Formation of bubbles at grain boundaries, and large cavities at incoherent twins intensified the possibility of mechanical separation of interfaces under high-gas irradiation conditions

The influence of ion energy, target temperature, dose rate and crystal order on the shape of bombardment induced pyramids on copper crystals

International Nuclear Information System (INIS)

Tanovic, L.; Whitton, J.L.; Kofod, S.

1978-01-01

Following recent studies of energetic ion bombardment of copper, which established the conditions necessary for the production of cones/pyramids, investigations have been extended to include the effects of change in ion energy, target temperature and dose rate. In addition, the authors have attempted a detailed analysis of the influence of sample crystal orientation on the final form of pyramids and have investigated the stability of the pyramids as a function of the total dose. These experiments, as in earlier work, have been done using very pure copper, mass-analyzed ion beams and free of any metal contamination from, for example, defining apertures. (Auth.)

Electronic structure of Ar{sup +} ion-sputtered thin-film MoS{sub 2}: A XPS and IPES study

Energy Technology Data Exchange (ETDEWEB)

Santoni, Antonino, E-mail: antonino.santoni@enea.it [Department FSN-TECFIS-MNF, ENEA, Frascati Research Center, via E. Fermi 45, 00044 Frascati (Italy); Rondino, Flaminia [Department FSN-TECFIS-MNF, ENEA, Frascati Research Center, via E. Fermi 45, 00044 Frascati (Italy); Malerba, Claudia [Department DTE-FSN-TEF, ENEA, Casaccia Research Center, via Anguillarese 301, 00123, Roma (Italy); DICAM, University of Trento, via Mesiano 77, 38123, Trento (Italy); Valentini, Matteo [Department DTE-FSN-TEF, ENEA, Casaccia Research Center, via Anguillarese 301, 00123, Roma (Italy); Department of Physics, University of Rome “Sapienza”, P.le Aldo Moro 5, 00156 Roma (Italy); Mittiga, Alberto [Department DTE-FSN-TEF, ENEA, Casaccia Research Center, via Anguillarese 301, 00123, Roma (Italy)

2017-01-15

Polycrystalline MoS{sub 2} grown by Mo sulphurization was exposed to increasing doses of Ar{sup +} ions at 250 eV starting from 2.2 × 10{sup 15} ions/cm{sup 2} to 3.92 × 10{sup 17} ions/cm{sup 2}. Electronic structure changes were monitored by X-Ray Photoelectron Spectroscopy (XPS) and Inverse Photolectron Spectroscopy (IPES). No change in the Fermi level position was observed with Ar{sup +} dosing. Ion bombardment resulted in a new visible feature at lower binding energy in the Mo3d core level, while the S2p lineshape showed little changes. The formation of a steady state from 2.49 × 10{sup 17} ions/cm{sup 2} has been detected. The investigation of the occupied and unoccupied states on the steady-state surface pointed to the simultaneous presence of metallic-like Mo with amorphous MoS{sub 2-x}.

Ionizing device comprising a microchannel electron multiplier with secondary electron emission

International Nuclear Information System (INIS)

Chalmeton, Vincent.

1974-01-01

The present invention relates to a ionizing device comprising a microchannel electron multiplier involving secondary electron emission as a means of ionization. A system of electrodes is used to accelerate said electrons, ionize the gas and extract the ions from thus created plasma. Said ionizer is suitable for bombarding the target in neutron sources (target of the type of nickel molybdenum coated with tritiated titanium or with a tritium deuterium mixture) [fr

Deep-level transient spectroscopy of low-energy ion-irradiated silicon

DEFF Research Database (Denmark)

Kolkovsky, Vladimir; Privitera, V.; Nylandsted Larsen, Arne

2009-01-01

 During electron-gun deposition of metal layers on semiconductors, the semiconductor is bombarded with low-energy metal ions creating defects in the outermost surface layer. For many years, it has been a puzzle why deep-level transient spectroscopy spectra of the as-deposited, electron-gun evapor...

Electron bombardment fusion and continuous casting of uranium carbide. Fundamental study of the metallurgical and thermal processes

International Nuclear Information System (INIS)

Trouve, J.

1968-02-01

During a pilot production run, about 1.200 kg of uranium carbide cylindrical rods were prepared by electron bombardment fusion and continuous casting in an apparatus making it possible to operate in a constant vacuum automatically. In order to make the most of the fusion technique used, it was necessary to resolve a certain number of problems involved in this production. It was found that the energy yield for the electron bombardment heating using accelerating voltages of about 10 kV was 100 per cent; about 40 per cent of the electrons are re-emitted by back-scattering. These electrons leave the surface with practically zero energy. The fusion technique leads to the elimination of the majority of the metallic impurities. In order to explain the variations in the non-metallic impurity contents the different reactions occurring in the molten uranium monocarbide have been determined. A micrographic study of the rods obtained has shown various types of crystallization depending on the rate of casting and, despite the uniaxial symmetry of the cooling, no texture has been observed, whatever the rate of fusion employed. The aspects of the fracture surfaces observed on certain rods can be explained by theory in the domain where the material is elastic. Furthermore it has been shown that a decrease in the brittleness occurs as a result of the formation of fine precipitates of the Wiedmanstatten structure type. (authors) [fr

Study of the secondary electron emission during bombardment of metal targets by positive D{sup +} and D{sub 2}{sup +} ions (1960); Etude de l'emission secondaire d'electrons au cours du bombardement de cibles metalliques par des ions positifs D{sup +} et D{sub 2}{sup +} (1960)

Energy Technology Data Exchange (ETDEWEB)

Leroy, J [Commissariat a l' Energie Atomique, Saclay (France).Centre d' Etudes Nucleaires; Prelec, K [Institut Rudjer Boskovic, Zagreb (Croatia)

1960-07-01

The secondary electron yield {gamma}-bar due to primary positive ions D{sup +} and D{sup +}{sub 2} has been measured in the 70 keV to 300 keV ion energy range. Several metallic targets have been used. The variation of this yield with the angle of incidence is proportional to sec {theta} where {theta} is the angle between the beam of primary ions and the normal to the target surface. The values {gamma}-bar decrease for increasing energy ions. At a given energy all the targets tried gave approximately the same electron yield. (author) [French] Le facteur d'emission secondaire a ete mesure pour des ions positifs D{sup +} et D{sup +}{sub 2} ayant une energie comprise entre 70 keV et 300 keV, sur differentes cibles metalliques. La variation de ce facteur avec l'angle d'incidence suit une loi de la forme {gamma}{sub 0} sec {theta}, {theta} etant l'angle entre le faisceau et la normale a la cible. Les valeurs de {gamma}-bar trouvees decroissent lorsque l'energie des ions incidents augmente, mais sont assez voisines les unes des autres, a une energie donnee, pour les differentes cibles essayees. (auteur)

Influence of ion bombardment on structure and properties of TiZrN thin film

Energy Technology Data Exchange (ETDEWEB)

Lin, Yu-Wei, E-mail: james722@itrc.narl.org.tw [Instrument Technology Research Center, National Applied Research Laboratories Taiwan (China); Huang, Jia-Hong; Yu, Ge-Ping [Department of Engineering and System Science, National Tsing Hua University, Taiwan (China); Hsiao, Chien-Nan; Chen, Fong-Zhi [Instrument Technology Research Center, National Applied Research Laboratories, Taiwan (China)

2015-11-01

Highlights: • (Ti,Zr)N thin films were produced using dual guns with Ti and Zr targets. • Ti{sub 0.5}Zr{sub 0.5}N shows excellent hardness of 37.8 GPa with exhibiting (1 1 1) preferred orientation. • Resistivity is inverse proportional to the packing density. • Hardness is proportional to the packing density. - Abstract: The study is focused on the characterization of TiZrN thin film by controlling the behavior of ion bombardment. Thin films are grown using radio frequency magnetron sputtering process on Si wafer. The negative bias voltage ranging from −20 V to −130 V was applied to the substrate. The ion current density increases rapidly as substrate bias is lower than −60 V, then slightly increases as the critical value about −60 V is exceeded. At the substrate bias of −60 V, the ion current density is close to 0.56 mA/cm{sup 2}. The resistivity measured by four-point probe decreases from conditions −20 V to −60 V and then increases for substrate bias increases from −60 V to −130 V. The resistivity of TiZrN films is contributed from the packing factor. The N/TiZr ratios about 1 were measured by Rutherford backscattering spectrometer, and the packing factors of TiZrN films can also be obtained by the results of RBS. Field Emission scanning electron microscope (FEG-SEM) is used to characterize the thickness and structure of the deposited TiZrN film. X-ray diffraction (XRD) is used to determine the preferred orientation and lattice parameter. The precursor results of XRD show that all the coating samples exhibited (1 1 1) preferred orientation, and the hardness values of TiZrN films were ranging from 20 to 40 GPa. To sum up the precursor studies, the TiZrN films which can improve the properties from TiN and ZrN is a new ceramic material with higher potential. Following the advance process and analysis research, the structure and properties can be correlated and as a reference for industry application.

Ion energy/momentum effects during ion assisted growth of niobium nitride films

Science.gov (United States)

Klingenberg, Melissa L.

The research described herein was performed to better understand and discern ion energy vs. ion momentum effects during ion beam assisted (IBAD) film growth and their effects on residual stress, crystalline structure, morphology, and composition, which influence film tribological properties. NbxN y was chosen for this research because it is a refractory material that can possess a large number of crystalline structures, and it has been found to have good tribological properties. To separate the effects of momentum transfer per arriving atom (p/a), which considers bombarding species mass, energy, and ion-to-atom transport ratio, from those of energy deposition per arriving atom (E/a), a mass independent parameter, different inert ion beams (krypton, argon, and neon) were used to create a matrix of coatings formed using similar energy deposition, but different momentum transfer and vice versa. Deposition was conducted in a research-scale IBAD system using electron beam evaporation, a radio frequency ion source, and a neutral nitrogen gas backfill. Films were characterized using x-ray diffraction, atomic force microscopy, Rutherford backscattering spectrometry, and residual stress analysis. Direct and quantifiable effects of bombardment were observed; however, energy deposition and momentum transfer effects could not be completely separated, confirming that thin film processes are complex. Complexities arose from ion-specific interactions (ion size, recoil energy, per cent reflected neutrals, Penning ionization, etc.) and chemistry effects that are not considered by the simple models. Overall, it can be stated that bombardment promoted nitride formation, nanocrystallinity, and compressive stress formation; influenced morphology (which influenced post-deposition oxygen uptake) and stress evolution; increased lattice parameter; modified crystalline phase and texture; and led to inert gas incorporation. High stress levels correlated strongly with material disorder and

Spatial variation in void volume during charged particle bombardment: the effects of injected interstitials

International Nuclear Information System (INIS)

Lee, E.H.; Mansur, L.K.; Yoo, M.H.

1979-01-01

Experimental observations of the void volume at several depths along the range of 4 MeV Ni ions in 316 stainless steel are reported. The specimens were first preconditioned by neutron irradiation at temperatures of 450 and 584 0 C to fluences of approximately 8 x 10 26 n/m -2 . The void volume after ion bombardment to 60 dpa at the peak damage depth is significantly lower at the peak damage depth than in the region between that and the free surface. The ratio of the step height to void volume at the depth of peak energy deposition between regions masked from and exposed to the beam is strongly dependent on bombardment temperature. The reduction of void volume near the peak damage depth is larger for the 584 0 C than for the 450 0 C preconditioned material. These observations are consistent with recent theoretical results which account for the injection of the bombarding ions as self-interstitials. The theory necessary to understand the effect is developed

Ion bombardment induced damage in silicon carbide studied by ion beam analytical methods

Energy Technology Data Exchange (ETDEWEB)

Szilagyi, E.; Kotai, E. [Magyar Tudomanyos Akademia, Budapest (HU). Research Inst. for Particle and Nuclear Physics (RIPNP); Khanh, N.Q.; Horvath, Z.E.; Lohner, T.; Battistig, G.; Zolnai, Z.; Gyulai, J. [Research Inst. for Technical Physics and Materials Science, Budapest (Hungary)

2001-07-01

Damage created by implantation of Al{sup +} ions into 4H-SiC is characterized using backscattering spectrometry in combination with channeling. The measurability of the damage profile in the carbon sublattice was demonstrated using the 4260 keV {sup 12}C({alpha},{alpha}){sup 12}C resonance. To create disorder, Al{sup +} ions with energy of 200 keV and 350 keV were implanted at room temperature. As an independent method, cross-sectional transmission electron microscopy was used to study the damage structure in irradiated 4H-SiC. (orig.)

Ion emission microscope microanalyzer

International Nuclear Information System (INIS)

Cherepin, V.T.; Olckovsky, V.L.

1977-01-01

In the ion microanalyzer (microprobe) the object is exposed to the bombardment of a highly focused ion beam, the secondary ions emitted from the object being analyzed by means of a mass filter. In order to be able to control the position of an analysis synchronous to the local analysis of an object an ion-optical converter (electron image with a fluorescent screen) is placed behind the aperture diaphragm in the direction of the secondary ion beam. The converter allows to make visible in front of the mass filter a non-split ion image characterizing the surface of the surface investigated. Then a certain section may be selected for performing chemical and isotope analyses. (DG) [de

Formation mechanism and yield of molecules ejected from ZnS, CdS, and FeS2 during ion bombardment

International Nuclear Information System (INIS)

Nikzad, S.; Calaway, W.F.; Pellin, M.J.; Young, C.E.; Gruen, D.M.; Tombrello, T.A.

1994-01-01

Neutral species ejected from single crystals of ZnS, CdS, and FeS 2 during ion bombardment by 3 keV Ar + were detected by laser post-ionization followed by time-of-flight mass spectrometry. While metal atoms (Fe, Zn, Cd) and S 2 were the dominant species observed, substantial amounts of S, FeS, Zn 2 , ZnS, Cd 2 , and CdS were also detected. The experimental results demonstrate that molecules represent a larger fraction of the sputtered yield than was previously believed from secondary ion mass spectrometry experiments. In addition, the data suggest that the molecules are not necessarily formed from adjacent atoms in the solid and that a modified form of the recombination model could provide a mechanism for their formation

Measurement of ion species produced due to bombardment of 450 eV N{sub 2}{sup +} ions with hydrocarbons-covered surface of tungsten: Formation of tungsten nitride

Energy Technology Data Exchange (ETDEWEB)

Kumar, S. [Atomic Physics Laboratory, Department of Physics, Institute of Science, Banaras Hindu University, Varanasi 221005 (India); Bhatt, P. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Kumar, A. [Institute for Plasma Research, Bhat, Gandhinagar 382428 (India); Singh, B.K.; Singh, B.; Prajapati, S. [Atomic Physics Laboratory, Department of Physics, Institute of Science, Banaras Hindu University, Varanasi 221005 (India); Shanker, R., E-mail: shankerorama@gmail.com [Atomic Physics Laboratory, Department of Physics, Institute of Science, Banaras Hindu University, Varanasi 221005 (India)

2016-08-01

A laboratory experiment has been performed to study the ions that are produced due to collisions of 450 eV N{sub 2}{sup +} ions with a hydrocarbons-covered surface of polycrystalline tungsten at room temperature. Using a TOF mass spectrometry technique, the product ions formed in these collisions have been detected, identified and analyzed. Different ion–surface reaction processes, namely, neutralization, reflection, surface induced dissociation, surface induced chemical reactions and desorption are observed and discussed. Apart from the presence of desorbed aliphatic hydrocarbon and other ions, the mass spectra obtained from the considered collisions show the formation and sputtering of tungsten nitride (WN). A layer of WN on tungsten surface is known to decrease the sputtering of bulk tungsten in fusion devices more effectively than when the tungsten is bombarded with other seeding gases (He, Ar). It is further noted that there is a negligible diffusion of N in the bulk tungsten at room temperature.

Ion beam induces nitridation of silicon

International Nuclear Information System (INIS)

Petravic, M.; Williams, J.S.; Conway, M.

1998-01-01

High dose ion bombardment of silicon with reactive species, such as oxygen and nitrogen, has attracted considerable interest due to possible applications of beam-induced chemical compounds with silicon. For example, high energy oxygen bombardment of Si is now routinely used to form buried oxide layers for device purposes, the so called SIMOX structures. On the other hand, Si nitrides, formed by low energy ( 100 keV) nitrogen beam bombardment of Si, are attractive as oxidation barriers or gate insulators, primarily due to the low diffusivity of many species in Si nitrides. However, little data exists on silicon nitride formation during bombardment and its angle dependence, in particular for N 2 + bombardment in the 10 keV range, which is of interest for analytical techniques such as SIMS. In SIMS, low energy oxygen ions are more commonly used as bombarding species, as oxygen provides stable ion yields and enhances the positive secondary ion yield. Therefore, a large body of data can be found in the literature on oxide formation during low energy oxygen bombardment. Nitrogen bombardment of Si may cause similar effects to oxygen bombardment, as nitrogen and oxygen have similar masses and ranges in Si, show similar sputtering effects and both have the ability to form chemical compounds with Si. In this work we explore this possibility in some detail. We compare oxide and nitride formation during oxygen and nitrogen ion bombardment of Si under similar conditions. Despite the expected similar behaviour, some large differences in compound formation were found. These differences are explained in terms of different atomic diffusivities in oxides and nitrides, film structural differences and thermodynamic properties. (author)

Producing the radioelectric effect in solid dielectrics by bombardment with accelerated electrons. Obrazovaniye radioelektretnogo effekta v tverdykh dielektrikakh v rezul'tate oblucheniya ikh uskorennymi elektronami

Energy Technology Data Exchange (ETDEWEB)

Zavadovskaya, E K; Annenkov, Yu M; Boev, S G; Sigaev, G I

1976-01-01

A theoretical and experimental study was made concerning the kinetics of formation of electric moments in solid dielectrics bombarded with fast electrons in the atmosphere. The energy of bombarding electrons in the experiment ranged from 0.6 to 2.0 MeV, at an incident flux density ranging 1.10/sup -9/ to 5.10/sup -7/ A/cm/sup 2/. The specimens were actually grounded during bonbardment, owing to the high electrical conductivity of the ionized ambient gas, and the electric moments were equal to zero. The formation of electric moments occurred after cessation of the bombardment, because the density of the accumulated space charge had become redistributed. An examination was made of the redistribution of space-charge density due to the electrical conductivity of the dielectric, due to intrinsic charge carriers, and due to the release of charges stored in traps. Analytical relations derived for the kinetics of the electric moments give a qualitative description of the experimental results. 5 references.

Dependence of ion - photon emission characteristics on the concentration of implanted atoms of the bombarding beam

International Nuclear Information System (INIS)

Belykh, S.F.; Evtukhov, R.N.; Redina, I.V.; Ferleger, V.Kh.

1989-01-01

Results of experiment, where Dy + beams, its spraying products emitting intensively optical radiation with continuous spectrum (CSR), are used for tantalum surface bombardment, are presented. The given experiment allowed one to separate the scattered particle CSR contribution and was conducted under controlled beam n atom concentration on the target surface. E 0 energy and j 0 dysprosium ion flux density made up respectively 3.5 keV and 3x10 5 Axcm -2 . The obtained result analysis has shown that a notable dependence of spectrum type on n value is detected. Dy scattered atoms to not emit CSR. The main contribution to CSR is made by sprayed particles, containing dysprosium atoms

Diagnostics of ballistic electrons in a dc/rf hybrid capacitively coupled discharge

International Nuclear Information System (INIS)

Xu Lin; Chen, Lee; Funk, Merritt; Ranjan, Alok; Hummel, Mike; Bravenec, Ron; Sundararajan, Radha; Economou, Demetre J.; Donnelly, Vincent M.

2008-01-01

The energy distribution of ballistic electrons in a dc/rf hybrid parallel-plate capacitively coupled plasma reactor was measured. Ballistic electrons originated as secondaries produced by ion and electron bombardment of the electrodes. The energy distribution of ballistic electrons peaked at the value of the negative bias applied to the dc electrode. As that bias became more negative, the ballistic electron current on the rf substrate electrode increased dramatically. The ion current on the dc electrode also increased

Ejection of fast recoil atoms from solids under ion bombardment (medium-energy ion scattering by solid surfaces: Pt. 3)

International Nuclear Information System (INIS)

Dodonoy, A.I.; Mashkova, E.S.; Molchanov, V.A.

1989-01-01

This paper is the third part of our review surface scattering. Part I, which was devoted to the scattering of ions by the surfaces of disordered solids, was published in 1972; Part II, concerning scattering by crystal surfaces, was published in 1974. Since the publication of these reviews the material contained in them has become obsolete in many respects. A more recent account of the status of the problem has been given in a number of studies, including the book by E.S. Mashkova and V.A. Molchanov, Medium-Energy Ion Scattering by Solid Surfaces (Atomizdat, Moscow, 1980), than extended version of which was published by North-Holland in 1985. We note, however, that at the time these reviews were written the study of fast recoil atoms had not been carried out systematically; the problem was studied only as a by-product of surface scattering and sputtering. For this reason, in the above-mentioned works and in other reviews the data relating to recoil atoms were considered only occasionally. In recent years there have appeared a number of works - theoretical, experimental and computer -specially devoted to the study of the ejection of recoil atoms under ion bombardment. A number of interesting effects, which are due to the crystal structure of the target, have been discovered. It therefore, appeared desirable to us to systematize the available material and to present it as Part III of our continuing review. (author)

Electron-ion collisions

International Nuclear Information System (INIS)

Crandall, D.H.

1982-01-01

This discussion concentrates on basic physics aspects of inelastic processes of excitation, ionization, and recombination that occur during electron-ion collisions. Except for cases of illustration along isoelectronic sequences, only multicharged (at least +2) ions will be specifically discussed with some emphasis of unique physics aspects associated with ionic charge. The material presented will be discussed from a primarily experimental viewpoint with most attention to electron-ion interacting beams experiments

Investigation of instability of M23C6 particles in F82H steel under electron and ion irradiation conditions

Science.gov (United States)

Kano, Sho; Yang, Huilong; Shen, Jingjie; Zhao, Zishou; McGrady, John; Hamaguchi, Dai; Ando, Mamami; Tanigawa, Hiroyasu; Abe, Hiroaki

2018-04-01

In order to clarify the instability of M23C6 in F82H steel under irradiation, both electron irradiation using a high voltage electron microscope (HVEM) and ion irradiation using an ion accelerator were performed. For the electron irradiation, in-situ observation under 2 MV electron irradiation and ex-situ high resolution electron microscopic (HREM) analysis were utilized to evaluate the response of M23C6 against irradiation. The temperature dependence of the irradiation induced instability of the carbide was first confirmed: 293 K indicating severe loss of crystallinity due to dissolution of the constituent atoms though irradiation-enhanced diffusion under the vacancy diffusion by the focused electron beam irradiation. For the ion irradiation, 10.5 MeV-Fe3+ ion was applied to bombard the F82H steel at 673 K to achieve the displacement damage of ≈20 dpa at the depth of 1.0 μm from surface. Cross-section TEM specimens were prepared by a focused ion beam technique. The shrinkage of carbide particles was observed especially near the irradiation surface. Besides, the lattice fringes at the periphery of carbide were observed in the irradiated M23C6 by the HREM analysis, which is different from that observed in the electron irradiation. It was clarified that the instability of M23C6 is dependent on the irradiation conditions, indicating that the flow rate of vacancy type defects might be the key factor to cause the dissolution of constituent atoms of carbide particles into matrix under irradiation.

Z/sub 1/ dependence of ion-induced electron emission from aluminum. [H/sup +/,H/sub 2//sup +/,D/sup +/,D/sub 2//sup +/,He/sup +/,B/sup +/,C/sup +/,N/sup +/,N/sub 2//sup +/,O/sup +/,O/sub 2//sup +/,F/sup +/,Ne/sup +/,S/sup +/,Cl/sup +/,Ar/sup +/,Kr/sup +/, and Xe/sup +/, 1. 2-50 keV

Energy Technology Data Exchange (ETDEWEB)

Alonso, E.V.; Baragiola, R.A.; Ferron, J.; Jakas, M.M.; Oliva-Florio, A.

1980-07-01

We have measured the electron emission yields ..gamma.. of clean aluminum under bombardment with H/sup +/, H/sub 2/ /sup +/, D/sup +/, D/sub 2/ /sup +/, He/sup +/, B/sup +/, C/sup +/, N/sup +/, N/sub 2/ /sup +/, O/sup +/, O/sub 2/ /sup +/, F/sup +/, Ne/sup +/, S/sup +/, Cl/sup +/, Ar/sup +/, Kr/sup +/, and Xe/sup +/ in the energy range 1.2--50 keV. The clean surfaces were prepared by in situ evaporation of high-purity Al under ultra-high-vacuum conditions. It is found that kinetic electron emission yields ..gamma../sub k/, obtained after subtracting from the measured ..gamma.. a contribution due to potential emission, are roughly proportional to the electronic stopping powers, for projectiles lighter than Al. For heavier projectiles there is a sizable contribution to electron emission from collisions involving rapidly recoiling target atoms, which increases with the mass of the projectile, and which dominates the threshold and near-threshold behavior of kinetic emission. The results, together with recently reported data on Auger electron emission from ion-bombarded Al show that the mechanism proposed by Parilis and Kishinevskii of inner-shell excitation and subsequent Auger decay is negligible for light ions and probably small for heavy ions on Al and in our energy range. We thus conclude that kinetic electron emission under bombardment by low-energy ions results mainly from the escape of excited valence electrons.

Study and characterization of a phosphorous ion source and development of a emittancemeter suited to multi-beam ion sources

International Nuclear Information System (INIS)

Hoang Gia Tuong.

1982-12-01

The ionization process which is used is the electronic bombardment. Phosphorus choice for the source experimentation is motivated by its principal destination: ionic implantation. Heavy ion applications are also quoted. Operating conditions allowing good results to be obtained are determined after a study of different parameters such as the electron current, the neutron pressure and the extraction voltage: the ion current obtained is of the order of mA. The source emittance, representing the quality of the ionic beam, is measured by a method suited to multibeam sources [fr

Ion accumulation and space charge neutralization in intensive electron beams for ion sources and electron cooling

International Nuclear Information System (INIS)

Shirkov, G.D.

1996-01-01

The Electron Beam Ion Sources (EBIS), Electron Beam Ion Traps (EBIT) and electron beams for electron cooling application have the beam parameters in the same ranges of magnitudes. EBIS and EBIT produce and accumulate ions in the beam due to electron impact ionization. The cooling electron beam accumulates positive ions from the residual gas in the accelerator chamber during the cooling cycle. The space charge neutralization of cooling beam is also used to reduce the electron energy spread and enhance the cooling ability. The advanced results of experimental investigations and theoretical models of the EBIS electron beams are applied to analyze the problem of beam neutralization in the electron cooling techniques. The report presents the analysis of the most important processes connected with ion production, accumulation and losses in the intensive electron beams of ion sources and electron cooling systems for proton and ion colliders. The inelastic and elastic collision processes of charged particles in the electron beams are considered. The inelastic processes such as ionization, charge exchange and recombination change the charge states of ions and neutral atoms in the beam. The elastic Coulomb collisions change the energy of particles and cause the energy redistribution among components in the electron-ion beams. The characteristic times and specific features of ionization, beam neutralization, ion heating and loss in the ion sources and electron cooling beams are determined. The dependence of negative potential in the beam cross section on neutralization factor is studied. 17 refs., 5 figs., 1 tab

Doubly differential cross sections of low-energy electrons emitted in the ionization of molecular hydrogen by bare carbon ions

International Nuclear Information System (INIS)

Tribedi, L.C.; Richard, P.; Ling, D.; Wang, Y.D.; Lin, C.D.; Moshammer, R.; Kerby, G.W. III; Gealy, M.W.; Rudd, M.E.

1996-01-01

We have measured the double differential cross sections (DDCS) (d 2 σ/d var-epsilon ed Ω e ) of low-energy electron emission in the ionization of H 2 bombarded by bare carbon ions of energy 30 MeV. The energy and angular distributions of the electron DDCS have been obtained for 12 different emission angles and for electron energies varying between 0.1 and 300 eV. We have also deduced the single differential and total ionization cross section from the measured DDCS. The data have been compared with the predictions of first Born approximations and the CDW-EIS (continuum distorted wave endash eikonal initial state) model. The CDW-EIS model provides an excellent agreement with the data. copyright 1996 The American Physical Society

Improvement of the wear resistance of electroplated Au-Ni coatings by Zr ion bombardment of Ni-B sublayer

International Nuclear Information System (INIS)

Lyazgin, Alexander; Shugurov, Artur; Sergeev, Viktor; Neufeld, Vasily; Panin, Alexey; Shesterikov, Evgeny

2015-01-01

The effect of bombardment of the Ni-B sublayer by Zr ion beams on the surface morphology and tribomechanical properties of Au-Ni coatings was investigated. It was found that the treatment has no significant effect on the surface roughness and grain size of the Au-Ni coatings, while it provides essential reducing of their friction coefficient and improvement of wear resistance. It is shown that increased wear resistance of these coatings was caused by their strain hardening resulted from localization of plastic strain. The optimal Zr fluence were determined that provide the maximum reduction of linear wear of the coatings

ANALYTICAL MODELING OF ELECTRON BACK-BOMBARDMENT INDUCED CURRENT INCREASE IN UN-GATED THERMIONIC CATHODE RF GUNS

Energy Technology Data Exchange (ETDEWEB)

Edelen, J. P. [Fermilab; Sun, Y. [Argonne; Harris, J. R. [AFRL, NM; Lewellen, J. W. [Los Alamos Natl. Lab.

2016-09-28

In this paper we derive analytical expressions for the output current of an un-gated thermionic cathode RF gun in the presence of back-bombardment heating. We provide a brief overview of back-bombardment theory and discuss comparisons between the analytical back-bombardment predictions and simulation models. We then derive an expression for the output current as a function of the RF repetition rate and discuss relationships between back-bombardment, fieldenhancement, and output current. We discuss in detail the relevant approximations and then provide predictions about how the output current should vary as a function of repetition rate for some given system configurations.

Hydrogen pumping and release by graphite under high flux plasma bombardment

International Nuclear Information System (INIS)

Hirooka, Y.; Leung, W.K.; Conn, R.W.; Goebel, D.M.; LaBombard, B.; Nygren, R.; Wilson, K.L.

1988-01-01

Inert gas (helium or argon) plasma bombardment has been found to increase the surface gas adsorptivity of isotropic graphite (POCO-graphite), which can then getter residual gases in a high vacuum system. The inert gas plasma bombardment was carried out at a flux ≅ 1 x 10 18 ions s -1 cm -2 to a fluence of the order of 10 21 ions/cm 2 and at temperatures around 800 0 C. The gettering capability of graphite can be easily recovered by repeating inert gas plasma bombardment. The activated graphite surface exhibits a smooth, sponge-like morphology with significantly increased pore openings, which correlates with the observed increase in the surface gas adsorptivity. The activated graphite surface has been observed to pump hydrogen plasma particles as well. From calibrated H-alpha measurements, the dynamic hydrogen retention capacity is evaluated to be as large as 2 x 10 18 H/cm 2 at temperatures below 100 0 C and at a plasma bombarding energy of 300 eV. The graphite temperature was varied between 15 and 480 0 C. Due to the plasma particle pumping capability, hydrogen recycling from the activated graphite surface is significantly reduced, relative to that from a pre-saturated surface. A pre-saturated surface was also observed to reproducibly pump a hydrogen plasma to a concentration of 9.5 x 10 17 H/cm 2 . The hydrogen retention capacity of graphite is found to decrease with increasing temperature. A transient pumping mechanism associated with the sponge-like surface morphology is conjectured to explain the large hydrogen retention capacity. Hydrogen release behavior under helium and argon plasma bombardment was also investigated, and the result indicated the possibility of some in-pore retrapping effect. 43 refs., 11 figs

Electron-ion correlation effects in ion-atom single ionization

Energy Technology Data Exchange (ETDEWEB)

Colavecchia, F.D.; Garibotti, C.R. [Centro Atomico Bariloche and Consejo Nacional de Investigaciones Cientificas y Tecnicas, 8400 San Carlos de Bariloche (Argentina); Gasaneo, G. [Departamento de Fisica, Universidad Nacional del Sur, Av. Alem 1253, 8000 Bahia Blanca (Argentina)

2000-06-28

We study the effect of electron-ion correlation in single ionization processes of atoms by ion impact. We present a distorted wave model where the final state is represented by a correlated function solution of a non-separable three-body continuum Hamiltonian, that includes electron-ion correlation as coupling terms of the wave equation. A comparison of the electronic differential cross sections computed with this model with other theories and experimental data reveals that the influence of the electron-ion correlation is more significant for low energy emitted electrons. (author). Letter-to-the-editor.

Electrical conductivity of polytetrafluoroethylene in dc and ac electric fields under continuous electron bombardment

International Nuclear Information System (INIS)

Khatipov, S.A.; Turdybekov, K.M.; Milinchuk, V.K.

1993-01-01

A study has been made of the time of the radiation current density in dc and ac (10 2 -5-10 3 Hz) electric fields (10 3 -5-10 5 V/cm) at temperatures from 80 to 393 K and dose rates from 5-10 3 Gy/sec, for PTFE films (50-180 μm) with various thermal prehistories, when exposed to continuous bombardment by 9-MeV electrons. It has been shown that the experimental results cannot be interpreted from the standpoint of free-charge conduction; they can be explained qualitatively within the framework of concepts of inhomogeneous ionization of the substance, due to the formation of short tracks

Target bombardment by ion beams generated in the Focus experiment

International Nuclear Information System (INIS)

Bernard, Alain; Coudeville, Alain; Garconnet, J.-P.; Jolas, A.; Mascureau, J. de; Nazet, Christian.

1976-01-01

In a Mather-Focus experiment, it was shown that 80% of the neutron emitted were generated through bombardment. The apparatus was operated with various targets at a distance of 13mm from the anode. In the low pressure regime, a deuteron beam of high energy was produced. Its emission duration was measured using a CD 2 target [fr

Stoichiometric carbon nitride synthesized by ion beam sputtering and post nitrogen ion implantation

International Nuclear Information System (INIS)

Valizadeh, R.; Colligon, J.S.; Katardiev, I.V.; Faunce, C.A.; Donnelly, S.E.

1998-01-01

Full text: Carbon nitride films have been deposited on Si (100) by ion beam sputtering a vitreous graphite target with nitrogen and argon ions with and without concurrent N2 ion bombardment at room temperature. The sputtering beam energy was 1000 eV and the assisted beam energy was 300 eV with ion / atom arrival ratio ranging from 0.5 to 5. The carbon nitride films were deposited both as single layer directly on silicon substrate and as multilayer between two layers of stoichiometric amorphous silicon nitride and polycrystalline titanium nitride. The deposited films were implanted ex-situ with 30 keV nitrogen ions with various doses ranging from 1E17 to 4E17 ions.cm -2 and 2 GeV xenon ion with a dose of 1E12 ions.cm -2 . The nitrogen concentration of the films was measured with Rutherford Backscattering (RBS), Secondary Neutral Mass Spectrometry (SNMS) and Parallel Electron Energy Loss Spectroscopy (PEELS). The nitrogen concentration for as deposited sample was 34 at% and stoichiometric carbon nitride C 3 N 4 was achieved by post nitrogen implantation of the multi-layered films. Post bombardment of single layer carbon nitride films lead to reduction in the total nitrogen concentration. Carbon K edge structure obtained from PEELS analysis suggested that the amorphous C 3 N 4 matrix was predominantly sp 2 bonded. This was confirmed by Fourier Transforrn Infra-Red Spectroscopy (FTIR) analysis of the single CN layer which showed the nitrogen was mostly bonded with carbon in nitrile (C≡N) and imine (C=N) groups. The microstructure of the film was determined by Transmission Electron Microscopy (TEM) which indicated that the films were amorphous

Modification of graphene by ion beam

Science.gov (United States)

Gawlik, G.; Ciepielewski, P.; Jagielski, J.; Baranowski, J.

2017-09-01

Ion induced defect generation in graphene was analyzed using Raman spectroscopy. A single layer graphene membrane produced by chemical vapor deposition (CVD) on copper foil and then transferred on glass substrate was subjected to helium, carbon, nitrogen, argon and krypton ions bombardment at energies from the range 25 keV to 100 keV. A density of ion induced defects and theirs mean size were estimated by using Raman measurements. Increasing number of defects generated by ion with increase of ion mass and decrease of ion energy was observed. Dependence of ion defect efficiency (defects/ion) on ion mass end energy was proportional to nuclear stopping power simulated by SRIM. No correlation between ion defect efficiency and electronic stopping power was observed.

Electron Beam Ion Sources

CERN Document Server

Zschornacka, G.; Thorn, A.

2013-12-16

Electron beam ion sources (EBISs) are ion sources that work based on the principle of electron impact ionization, allowing the production of very highly charged ions. The ions produced can be extracted as a DC ion beam as well as ion pulses of different time structures. In comparison to most of the other known ion sources, EBISs feature ion beams with very good beam emittances and a low energy spread. Furthermore, EBISs are excellent sources of photons (X-rays, ultraviolet, extreme ultraviolet, visible light) from highly charged ions. This chapter gives an overview of EBIS physics, the principle of operation, and the known technical solutions. Using examples, the performance of EBISs as well as their applications in various fields of basic research, technology and medicine are discussed.

3 to 15 keV Ar+ induced Auger electron emission from Si and Ar

International Nuclear Information System (INIS)

Kempf, J.; Kaus, G.

1977-01-01

Ar + induced Auger electrons from Si and Ar were investigated at bombardment energies between 3-15 keV and target currents of a few μA. The Auger electron yields were compared with secondary ion yields of Si and Ar by simultaneous SIMS-AES measurements. In the ion induced Auger spectra of Si five Auger peaks and in the Ar spectra three Auger peaks were observed. The ion induced Auger electron yield of Si and Ar were found to be strongly dependent upon the primary ion energy. 'Bulk like' and 'atomic like' Auger transitions of ion induced Auger electrons of Si were observed. (orig.) [de

Effects of MeV Si ions bombardment on the thermoelectric generator from SiO{sub 2}/SiO{sub 2} + Cu and SiO{sub 2}/SiO{sub 2} + Au nanolayered multilayer films

Energy Technology Data Exchange (ETDEWEB)

Budak, S., E-mail: satilmis.budak@aamu.edu [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Chacha, J., E-mail: chacha_john79@hotmail.com [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Smith, C., E-mail: cydale@cim.aamu.edu [Center for Irradiation of Materials, Alabama A and M University, Normal, AL (United States); Department of Physics, Alabama A and M University, Normal, AL (United States); Pugh, M., E-mail: marcuspughp@yahoo.com [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Colon, T. [Department of Mechanical Engineering, Alabama A and M University, Normal, AL (United States); Heidary, K., E-mail: kaveh.heidary@aamu.edu [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Johnson, R.B., E-mail: barry@w4wb.com [Department of Physics, Alabama A and M University, Normal, AL (United States); Ila, D., E-mail: ila@cim.aamu.edu [Center for Irradiation of Materials, Alabama A and M University, Normal, AL (United States); Department of Physics, Alabama A and M University, Normal, AL (United States)

2011-12-15

The defects and disorder in the thin films caused by MeV ions bombardment and the grain boundaries of these nanoscale clusters increase phonon scattering and increase the chance of an inelastic interaction and phonon annihilation. We prepared the thermoelectric generator devices from 100 alternating layers of SiO{sub 2}/SiO{sub 2} + Cu multi-nano layered superlattice films at the total thickness of 382 nm and 50 alternating layers of SiO{sub 2}/SiO{sub 2} + Au multi-nano layered superlattice films at the total thickness of 147 nm using the physical vapor deposition (PVD). Rutherford Backscattering Spectrometry (RBS) and RUMP simulation have been used to determine the stoichiometry of the elements of SiO{sub 2}, Cu and Au in the multilayer films and the thickness of the grown multi-layer films. The 5 MeV Si ions bombardments have been performed using the AAMU-Center for Irradiation of Materials (CIM) Pelletron ion beam accelerator to make quantum (nano) dots and/or quantum (quantum) clusters in the multilayered superlattice thin films to decrease the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and cross plane electrical conductivity. To characterize the thermoelectric generator devices before and after Si ion bombardments we have measured Seebeck coefficient, cross-plane electrical conductivity, and thermal conductivity in the cross-plane geometry for different fluences.

Intravenous coronary angiography utilizing K-emission and bremsstrahlung X-rays produced by electron bombardment

International Nuclear Information System (INIS)

1992-01-01

The screening of the general population for coronary artery disease would be practical if a method existed for visualizing the extent of occlusion after an intravenous injection of contrast agent. Measurements performed with synchrotron radiation at SSRL and NSLS have shown that such an intravenous angiography procedure would be possible with an intense source of monochromatic X-rays. Because of the high cost of an electron synchrotron, theoretical analysis and experiments using inanimate phantoms has been undertaken to demonstrate the feasibility of using the spectrum produced by two appropriately chosen anode materials when bombarded with electrons in the 100--500 keV energy range for angiography. By using the X-rays emitted at 120 degree to the incident electron direction, about 20--30% of the X-ray intensity would be due to K-emission lines. Calculations using the TIGERP Monte Carlo Code, have shown that high quality angiograms of human coronary arteries should be possible with a contrast agent containing ytterbium, if an electron beam pulses of 16 kJ were used for each anode target. The experimental program supported in part by the DOE has consisted of these theoretical calculations and experiments at the Dynamitron Electron Accelerator Facility at BNL

Removal of foreign atoms from a metal surface bombarded with fast atomic particles

Energy Technology Data Exchange (ETDEWEB)

Dolotov, S.K.; Evstigneev, S.A.; Luk' yanov, S.Yu.; Martynenko, Yu.V.; Chicherov, V.M.

1976-07-01

A metal surface coated with foreign atoms was irradiated with periodically repeating ion current pulses. The energy of the ions bombarding the target was 20 to 30 keV, and inert gas ions were used. A study of the time dependences of the current of the dislodged foreign atoms showed that the rate of their removal from the target surface is determined by the sputtering coefficient of the substrate metal.

Removal of foreign atoms from a metal surface bombarded with fast atomic particles

International Nuclear Information System (INIS)

Dolotov, S.K.; Evstigneev, S.A.; Luk'yanov, S.Yu.; Martynenko, Yu.V.; Chicherov, V.M.

A metal surface coated with foreign atoms was irradiated with periodically repeating ion current pulses. The energy of the ions bombarding the target was 20 to 30 keV, and inert gas ions were used. A study of the time dependences of the current of the dislodged foreign atoms showed that the rate of their removal from the target surface is determined by the sputtering coefficient of the substrate metal

Ion-induced Auger electron spectroscopy: a new detection method for compositional homogeneities of alloyed atoms in silicon

Energy Technology Data Exchange (ETDEWEB)

Hiraki, A [Osaka Univ., Japan; Imura, T; Iwami, M; Kim, S C; Ushita, K; Okamoto, H; Hamakawa, Y

1979-09-01

Auger spectra of Si LMM transitions induced by keV Ar/sup +/ ion bombardment of Si alloy systems have been studied. The spectra observed are composed of two well-defined peaks termed elsewhere the atomic-like and bulk-like peaks, repsectively. A clear correlation has been found between the intensity of the atomic-like peak lying at 88 eV and the content of the foreign atoms alloyed with Si. Experiments were carried out on metallic silicides, or Si alloys with Au, Cu, Pd and Ni, and covalently bonded non-metallic Si alloys of C and H. From these studies, we propose that ion-induced Auger electron spectroscopy might be a useful tool for the determination of alloyed foreign atoms as well as for the study of their compositional homogeneity in binary alloy systems of silicon.

Radiative Auger effect in ion-atom collisions

International Nuclear Information System (INIS)

Richard, P.; Oltjen, J.; Jamison, K.A.; Kauffman, R.L.; Woods, C.W.; Hall, J.M.

1975-01-01

The radiative Auger effect, RAE, is observed for Al and Si bombarded by 1-2MeV H + . This is the first observation of the RAE X-ray edge using ion excitation. The K-L 23 L 23 RAE edge energy and the relative intensity are in agreement with the previously reported electron and photon induced spectra. (Auth.)

Ion source design for industrial applications

Science.gov (United States)

Kaufman, H. R.; Robinson, R. S.

1981-01-01

The more frequently used design techniques for the components of broad-beam electron bombardment ion sources are discussed. The approach used emphasizes refractory metal cathodes and permanent-magnet multipole discharge chambers. Design procedures and sample calculations are given for the discharge chamber, ion optics, the cathodes, and the magnetic circuit. Hardware designs are included for the isolator, cathode supports, anode supports, pole-piece assembly, and ion-optics supports. A comparison is made between two-grid and three-grid optics. The designs presented are representative of current technology and are adaptable to a wide range of configurations.

Compositional changes during ion bombardment

International Nuclear Information System (INIS)

Rehn, L.E.

1988-09-01

Ion irradiation initiates several processes that can alter the composition of the target. This presentation provides an overview of our current understanding of these kinetics processes, which include implantation, sputtering, displacement mixing, radiation-enhanced diffusion, and radiation-induced segregation. The latter two effects can alter the target composition to depths that are substantially greater than the projected ion range. 45 refs., 8 figs

Ion emission in solids bombarded with Aun+ (n = 1 - 9) clusters accelerated within the 0.15 - 1.25 MeV energy range

International Nuclear Information System (INIS)

Wehbe, Nimer

2006-06-01

This experimental work is devoted to the study of the ion emission in solids at the impact of gold clusters of energies within 0.15 to 1.25 MeV range. The physics of ion-solid collisions and the theoretical models of sputtering of solids under ion bombardment are presented in the first chapter. The chapter no. 2 deals with the description of the experimental setup. The study of a gold target allowed to evidence the role of the size and energy of the clusters in determining the emission intensity and the mass distribution of the ions. The 4. chapter gives results from the study of cesium iodide in which the intense emission of CsI clusters could be investigated quantitatively due to multiplicity measurements. Finally, the chapter no. 5 was devoted to the study of a biologic molecule, the phenylalanine, and of a pesticide molecule, chlorosulfuron. This work evidenced the importance of clusters for surface analyses by mass spectrometry

Fast atom bombardment mass spectrometry of condensed tannin sulfonate derivatives

Science.gov (United States)

J.J. Karchesy; L.Y. Foo; Richard W. Hemingway; E. Barofsky; D.F. Barofsky

1989-01-01

Condensed tannin sulfonate derivatives were studied by fast atom bombardment mass spectrometry (FAB-MS) to assess the feasibility of using this technique for determining molecular weight and structural information about these compounds. Both positive- and negative-ion spectra provided useful data with regard to molecular weight, cation species present, and presence of...

A new TRISTAN thermal ion source

International Nuclear Information System (INIS)

Piotrowski, A.; Gill, R.L.; McDonald, D.C.

1984-01-01

A new thermal ion source with an integrated target which is heated by electron bombardment to a temperature of 2500 0 C has been developed for the TRISTAN on-line fission product mass separator at Brookhaven National Laboratory. Initial on-line tests demonstrated that this ion source can extend the range of accessible elements to the rare-earth region. Yields are presented for isotopes of Ce, Pr, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Ga, Ge, As, Y, Zr, Nb, In, Sn and Sb. (orig.)

Future directions in electron--ion collision physics

International Nuclear Information System (INIS)

Reed, K.J.; Griffin, D.C.

1992-01-01

This report discusses the following topics: Summary of session on synergistic co-ordination of theory and experiment; synergism between experiment and theory in atomic physics; comparison of theory and experiment for electron-ion excitation and ionization; summary of session on new theoretical and computational methods; new theoretical and computational methods-r-matrix calculations; the coulomb three-body problem: a progress report; summary of session on needs and applications for electron-ion collisional data; electron-ion collisions in the plasma edge; needs and applications of theoretical data for electron impact excitation; summary of session on relativistic effects, indirect effects, resonance, etc; direct and resonant processes in electron-ion collisions; relativistic calculations of electron impact ionization and dielectronic recombination cross section for highly charged ions; electron-ion recombination in the close-coupling approximation; modified resonance amplitudes with strongly correlated channels; a density-matrix approach to the broadening of spectral lines by autoionization, radiative transitions and electron-ion collisions; towards a time-dependent description of electron-atom/ion collisions two electron systems; and comments on inclusion of the generalized bright interaction in electron impact excitation of highly charged ions

Clearance of short circuited ion optics electrodes by capacitive discharge. [in ion thrusters

Science.gov (United States)

Poeschel, R. L.

1976-01-01

The ion optics electrodes of low specific impulse (3000 sec) mercury electron bombardment ion thrusters are vulnerable to short circuits by virtue of their relatively small interelectrode spacing (0.5 mm). Metallic flakes from backsputtered deposits are the most probable cause of such 'shorts' and 'typical' flakes have been simulated here using refractory wire that has a representative, but controllable, cross section. Shorting wires can be removed by capacitive discharge without significant damage to the electrodes. This paper describes an evaluation of 'short' removal versus electrode damage for several combinations of capacitor voltage, stored energy, and short circuit conditions.

Heavy Ion Injection Into Synchrotrons, Based On Electron String Ion Sources

CERN Document Server

Donets, E E; Syresin, E M

2004-01-01

A possibility of heavy ions injection into synchrotrons is discussed on the base of two novel ion sources, which are under development JINR during last decade: 1) the electron string ion source (ESIS), which is a modified version of a conventional electron beam ion source (EBIS), working in a reflex mode of operation, and 2) the tubular electron string ion source (TESIS). The Electron String Ion Source "Krion-2" (VBLHE, JINR, Dubna) with an applied confining magnetic field of 3 T was used for injection into the superconducting JINR synchrotron - Nuclotron and during this runs the source provided a high pulse intensity of the highly charged ion beams: Ar16+

Dynamic behavior of ion acoustic waves in electron-positron-ion magnetoplasmas with superthermal electrons and positrons

Science.gov (United States)

Saha, Asit; Pal, Nikhil; Chatterjee, Prasanta

2014-10-01

The dynamic behavior of ion acoustic waves in electron-positron-ion magnetoplasmas with superthermal electrons and positrons has been investigated in the framework of perturbed and non-perturbed Kadomtsev-Petviashili (KP) equations. Applying the reductive perturbation technique, we have derived the KP equation in electron-positron-ion magnetoplasma with kappa distributed electrons and positrons. Bifurcations of ion acoustic traveling waves of the KP equation are presented. Using the bifurcation theory of planar dynamical systems, the existence of the solitary wave solutions and the periodic traveling wave solutions has been established. Two exact solutions of these waves have been derived depending on the system parameters. Then, using the Hirota's direct method, we have obtained two-soliton and three-soliton solutions of the KP equation. The effect of the spectral index κ on propagations of the two-soliton and the three-soliton has been shown. Considering an external periodic perturbation, we have presented the quasi periodic behavior of ion acoustic waves in electron-positron-ion magnetoplasmas.

Dynamic behavior of ion acoustic waves in electron-positron-ion magnetoplasmas with superthermal electrons and positrons

Energy Technology Data Exchange (ETDEWEB)

Saha, Asit, E-mail: asit-saha123@rediffmail.com, E-mail: prasantachatterjee1@rediffmail.com [Department of Mathematics, Sikkim Manipal Institute of Technology, Majitar, Rangpo, East-Sikkim 737136 (India); Department of Mathematics, Siksha Bhavana, Visva Bharati University, Santiniketan-731235 (India); Pal, Nikhil; Chatterjee, Prasanta, E-mail: asit-saha123@rediffmail.com, E-mail: prasantachatterjee1@rediffmail.com [Department of Mathematics, Siksha Bhavana, Visva Bharati University, Santiniketan-731235 (India)

2014-10-15

The dynamic behavior of ion acoustic waves in electron-positron-ion magnetoplasmas with superthermal electrons and positrons has been investigated in the framework of perturbed and non-perturbed Kadomtsev-Petviashili (KP) equations. Applying the reductive perturbation technique, we have derived the KP equation in electron-positron-ion magnetoplasma with kappa distributed electrons and positrons. Bifurcations of ion acoustic traveling waves of the KP equation are presented. Using the bifurcation theory of planar dynamical systems, the existence of the solitary wave solutions and the periodic traveling wave solutions has been established. Two exact solutions of these waves have been derived depending on the system parameters. Then, using the Hirota's direct method, we have obtained two-soliton and three-soliton solutions of the KP equation. The effect of the spectral index κ on propagations of the two-soliton and the three-soliton has been shown. Considering an external periodic perturbation, we have presented the quasi periodic behavior of ion acoustic waves in electron-positron-ion magnetoplasmas.

Low energy ion implantation and high energy heavy ion irradiation in C60 films

International Nuclear Information System (INIS)

Narayanan, K.L.; Yamaguchi, M.; Dharmarasu, N.; Kojima, N.; Kanjilal, D.

2001-01-01

C 60 films have been bombarded with low energy boron ions and high energy swift heavy ions (SHI) of silver and oxygen at different doses. Raman scattering and Fourier transform infrared (FTIR) studies were carried out on the virgin and irradiated films and the results are in good agreement with each other. The films subject to low energy boron ion implantation showed destruction of the bukky balls whereas the films subject to high energy ion irradiation did not show appreciable effects on their structure. These results indicate that C 60 films are more prone to defects by elastic collision and subsequent implantation at lower energy. Irradiation at higher energy was less effective in creating appreciable defects through electronic excitation by inelastic collisions at similar energy density

ECR ion source with electron gun

Science.gov (United States)

Xie, Zu Q.; Lyneis, Claude M.

1993-01-01

An Advanced Electron Cyclotron Resonance ion source (10) having an electron gun (52) for introducing electrons into the plasma chamber (18) of the ion source (10). The ion source (10) has a injection enclosure (12) and a plasma chamber tank (14). The plasma chamber (18) is defined by a plurality of longitudinal magnets (16). The electron gun (52) injects electrons axially into the plasma chamber (18) such that ionization within the plasma chamber (18) occurs in the presence of the additional electrons produced by the electron gun (52). The electron gun (52) has a cathode (116) for emitting electrons therefrom which is heated by current supplied from an AC power supply (96) while bias potential is provided by a bias power supply (118). A concentric inner conductor (60) and Outer conductor (62) carry heating current to a carbon chuck (104) and carbon pusher (114) Which hold the cathode (116) in place and also heat the cathode (16). In the Advanced Electron Cyclotron Resonance ion source (10), the electron gun (52) replaces the conventional first stage used in prior art electron cyclotron resonance ion generators.

Electronic and Optical Properties of Aluminum Oxide Before and After Surface Reduction by Ar+ Bombardment

Directory of Open Access Journals (Sweden)

D. Tahir

2014-08-01

Full Text Available The electronic and optical properties of a-Al2O3 after induced by 3-keV Ar+ sputtering have been studied quantitatively by use of reflection electron energy loss spectroscopy (REELS spectra. The band gap values of a-Al2O3 was determined from the onset values of the energy loss spectrum to the background level of REELS spectra as a function of time Ar+ bombardment. The bandgap changes from 8.4 eV before sputtering to 6.2 eV after 4 minutes of sputtering.The optical properties of α-Al2O3 thin films have been determined by comparing the experimental cross section obtained from reflection electron energy loss spectroscopy with the theoretical inelastic scattering cross section, deduced from the simulated energy loss function (ELF by using QUEELS-ε(k-REELS software. The peak assignments are based on ELF and compared with reported data on the electronic structure of α-Al2O3 obtained using different techniques. The results demonstrate that the electronic and optical properties before and after surface reduction will provide further understanding in the fundamental properties of α-Al2O3 which will be useful in the design, modeling and analysis of devices applications performance.

Cornell electron beam ion source

International Nuclear Information System (INIS)

Kostroun, V.O.; Ghanbari, E.; Beebe, E.N.; Janson, S.W.

1981-01-01

An electron beam ion source (EBIS) for the production of low energy, multiply charged ion beams to be used in atomic physics experiments has been designed and constructed. An external high perveance electron gun is used to launch the electron beam into a conventional solenoid. Novel features of the design include a distributed sputter ion pump to create the ultrahigh vacuum environment in the ionization region of the source and microprocessor control of the axial trap voltage supplies

Ion- and electron-acoustic solitons in two-electron temperature space plasmas

International Nuclear Information System (INIS)

Lakhina, G. S.; Kakad, A. P.; Singh, S. V.; Verheest, F.

2008-01-01

Properties of ion- and electron-acoustic solitons are investigated in an unmagnetized multicomponent plasma system consisting of cold and hot electrons and hot ions using the Sagdeev pseudopotential technique. The analysis is based on fluid equations and the Poisson equation. Solitary wave solutions are found when the Mach numbers exceed some critical values. The critical Mach numbers for the ion-acoustic solitons are found to be smaller than those for electron-acoustic solitons for a given set of plasma parameters. The critical Mach numbers of ion-acoustic solitons increase with the increase of hot electron temperature and the decrease of cold electron density. On the other hand, the critical Mach numbers of electron-acoustic solitons increase with the increase of the cold electron density as well as the hot electron temperature. The ion-acoustic solitons have positive potentials for the parameters considered. However, the electron-acoustic solitons have positive or negative potentials depending whether the fractional cold electron density with respect to the ion density is greater or less than a certain critical value. Further, the amplitudes of both the ion- and electron-acoustic solitons increase with the increase of the hot electron temperature. Possible application of this model to electrostatic solitary waves observed on the auroral field lines by the Viking spacecraft is discussed

Calculation of ion storage in electron beams with account of ion-ion interactions

International Nuclear Information System (INIS)

Perel'shtejn, Eh.A.; Shirkov, G.D.

1979-01-01

Ion storage in relativistic electron beams was calculated taking account of ion-ion charge exchange and ionization. The calculations were made for nitrogen ion storage from residual gas during the compression of electron rings in the adhezator of the JINR heavy ion accelerator. The calculations were made for rings of various parameters and for various pressures of the residual gas. The results are compared with analogous calculations made without account of ion-ion processes. It is shown that at heavy loading of a ring by ions ion-ion collisions play a significant part, and they should be taken into account while calculating ion storage

Collisional transfer of electrons to the continuum of atomic and molecular ions

International Nuclear Information System (INIS)

Gonzalez Lepera, C.E.

1983-01-01

The aim of this study was the systematic investigation of the differences that appear in the peaks of distribution of doubly differential (in angle an energy) 'convoy' electrons, when comparing spectra obtained by bombarding thin carbon foils with atomic (H + ) and molecular (H 2 + ) projectiles of equal velocity. The measurements show that the production yield of such electrons is inversely propotional to the ion dwell time in the solid. For long times, the yield ratio fluctuates around the unity value, and the amplitude of this dispersion decreases for longer times. A higher yield is measured for (H 2 + ), but only near the peak cusp. The double differential cross section (DDCS) for electron capture is calculated in second order Born approximation. A transition from a 1s state to the continuum of two correlated protons as a function of their internuclear distance R is considered. As R decreases from approx. 0.5 atomic units towards zero, the DDCS value increases from that corresponding to the atomic projectil (Z=1) limit to the united atom value (Z=2). It is found that, the higher the projectil velocity, the better is the DDCS value agreement with both limits. The equipment used by the author is described. (M.E.L.) [es

Polymerization of solid C60 under C60 cluster ion bombardment

Czech Academy of Sciences Publication Activity Database

Lavrentiev, Vasyl; Vacík, Jiří; Naramoto, H.; Narumi, K.

2009-01-01

Roč. 95, - (2009), s. 867-873 ISSN 0947-8396 R&D Projects: GA AV ČR(CZ) KAN400480701; GA MŠk(CZ) LC06041 Institutional research plan: CEZ:AV0Z10480505 Keywords : fulleren * cluster * bombardment * polymerization Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.595, year: 2009 http://www.springerlink.com/content/0947-8396

Ion induced x-ray emission

International Nuclear Information System (INIS)

Cohen, D.D.

1983-01-01

Three types of perturbation theory have been used to describe inner shell vacancy production by light to medium ion bombardment. Inclusion of Coulomb deflection and binding effects in the plane wave Born approximation is discussed. More recently this relativistic Coulomb deflection corrected perturbed stationary state theory has been extended to include energy loss effects. This ECPSSR theory is one of the most successful in predicting inner shell ionisation cross sections for both K and L shells, provided the projectile to target atomic number ratio is less than about 0.3 and, for the heavier ions, electron capture processes by the projectile are included

Sputtering of solid deuterium by He-ions

DEFF Research Database (Denmark)

Schou, Jørgen; Stenum, B.; Pedrys, R.

2001-01-01

Sputtering of solid deuterium by bombardment of 3He+ and 4He+ ions was studied. Some features are similar to hydrogen ion bombardment of solid deuterium, but for the He-ions a significant contribution of elastic processes to the total yield can be identified. The thin-film enhancement is more pro...... pronounced than that for hydrogen projectiles in the same energy range....

Ionization, charge exchange, and secondary electron emission in the extractor of an LBL/LLL neutral beam source

International Nuclear Information System (INIS)

Fink, J.H.; McDowell, C.E.

1975-01-01

Using a computer code, bombardment of the electrodes resulting from ionization, charge-exchange, and back-ion emission from the neutralizer cell is studied in the positive-ion extractor region of a Lawrence Berkeley Laboratory/Lawrence Livermore Laboratory (LBL/LLL) neutral beam source. Ion and electron trajectories are presented, grid dissipations estimated, and proposals made for future designs

Emission of low-energetic electrons in collisions of heavy ions with solid targets; Emission niederenergetischer Elektronen in Stoessen von schweren Ionen mit Festkoerpertargets

Energy Technology Data Exchange (ETDEWEB)

Lineva, Natallia

2008-07-15

At the UNILAC accelerator, we have initiated a project with the objective to investigate lowenergy electrons, emitted from solid, electrically conductive targets after the impact of swift light and heavy ions. For this purposes, we have installed, optimized, and put into operation an electrostatic toroidal electron spectrometer. First, investigations of electrons, emitted from solid-state targets after the bombardment with a monochromatic electron beam from an electron gun, has been carried out. The proposed method combines the results of the measurements with the results of dedicated Monte Carlo simulations. The method has been elaborated in a case study for carbon targets. The findings have been instrumental for the interpretation of our measurements of electrons emitted in collisions of swift ions with the same carbon targets. Our investigations focused on following ion beams: protons and (H{sup +}{sub 3})-molecules of the same energy, as well as on carbon ions with two different energies. Thin carbon, nickel, argon and gold foils has been used as targets. Electrons in the energy range between 50 eV and 1 keV have been investigated. The measured electron distributions, both integral as well as differential with respect to the polar angle, have been compared to simple standard theories for gases as well as to the results of TRAX simulations, the latter being based on data from gaseous targets. Dedicated TRAX simulations have been performed only for the carbon targets, applying the method mentioned above. Within our experimental uncertainties, we observe a good agreement of the measured and TRAX simulated data. That leads us to the conclusion that - as a first order approximation - the electron emission pattern from ion-atom collisions in solid-state targets and the one from single collisions in gases are similar. (orig.)

Secondary electron emission from 0.5--2.5-MeV protons and deuterons

International Nuclear Information System (INIS)

Thornton, T.A.; Anno, J.N.

1977-01-01

Measurement of the secondary electron currents leaving Al, V, Fe, 316 stainless steel, Nb, and Mo foils undergoing 0.5--2.5-MeV proton and deuteron bombardment were made to determine the secondary electron emission ratios for these ions. The measured secondary electron yields were of the order of 1.0, with the deuterons producing generally higher yields than the protons

Electron-impact excitation of molecular ions

International Nuclear Information System (INIS)

Neufeld, D.A.; Dalgarno, A.

1989-01-01

A simple expression is derived that relates the rate coefficient for dipole-allowed electron-impact excitation of a molecular ion in the Coulomb-Born approximation to the Einstein A coefficient for the corresponding radiative decay. Results are given for several molecular ions of astrophysical interest. A general analytic expression is obtained for the equilibrium rotational level populations in the ground vibrational state of any molecular ion excited by collisions with electrons. The expression depends only upon the electron temperature, the electron density, and the rotational constant of the molecular ion. A similar expression is obtained for neutral polar molecules

Secondary ion emission from cleaned surfaces bombarded by 100 MeV accelerator beams at the GSI Darmstadt

International Nuclear Information System (INIS)

Wien, K.; Becker, O.; Guthier, W.; Knippelberg, W.; Koczon, P.

1988-01-01

The 1.4 MeV/n beam facility for the UNILAC/GSI has been used to study secondary ion emission from surfaces cleaned under UHV conditions by ion etching or cleaving of crystals. The desorption phenomena observed by means of TOF mass spectrometry can be classified as follows: (1) Clean metal surfaces emit metal ions being ejected by atomic collisions cascades. Electronic excitation of surface states seems to support ionization. (2) The desorption of contaminants adsorbed at the metal surface is strongly correlated with the electronic energy loss of the projectiles - even, if the content of impurities is very low. (3) Ion formation at the epitaxial surface of fluoride crystals as CaF 2 , MgF 2 and NaF is initiated by the electronic excitation of the crystal. At high beam energies the mass spectrum is dominated by a series of cluster ions. These cluster ions disappear below a certain energy deposit threshold, whereas small atomic ions are observed over the whole energy range

Spectroscopy of heavy few-electron ions

International Nuclear Information System (INIS)

Mokler, P.H.

1986-07-01

In this paper we ask first, why is it interesting to investigate heavy-few electron ions. Then the various accelerator-based methods to produce heavy few-electron ions are discussed. In the main part an overview on available heavy few-electron ion data and current experiments is given. The summary will end up with future aspects in this field. (orig.)

Surface behavior based on ion-induced secondary electron emission from semi-insulating materials in breakdown evolution

Energy Technology Data Exchange (ETDEWEB)

Koc, Emrah; Karakoese, Sema [Department of Physics, Faculty of Sciences, Gazi University, 06500 Ankara (Turkey); Salamov, Bahtiyar G. [Department of Physics, Faculty of Sciences, Gazi University, 06500 Ankara (Turkey); Institute of Physics, National Academy of Science, 1143 Baku (Azerbaijan)

2013-09-15

This study focuses on analyses of secondary electron emission (SEE) at semiconductor surfaces when the sufficient conditions of space-time distribution occur. Experimental measurements and calculations with the approach of Townsend coefficients, which include the evaluations of ionization coefficient ({alpha}) and SEE coefficient ({gamma}) were performed in high-ohmic InP, GaAs, and Si semiconductor cathodes with argon and air environments in a wide range of E/N (300-10 000 Td). The direct calculations of {gamma} were carried out to determine the behavior of cold-semiconductor cathode current in a wide range of microgaps (45-525 {mu}m). Paschen curves are interpreted in the dependence of large pd range on breakdown voltage through {gamma} and {alpha}/N. Ion-induced secondary electrons exhibit the direct behaviors affecting the timescale of breakdown evolution in the vicinity of the Paschen minimum during the natural bombardment process with ions of semiconductor cathodes. Also, when {alpha}/N rapidly drops and the excitations of gas atoms densely occupy the gas volume, we determined that the photoelectric effect provides a growth for electron emission from semiconductor surfaces at the breakdown stage at the reduced values of E/N. At all pressures, the emission magnitudes of electrons liberated by semiconductor cathodes into vacuum are found as {gamma}{sub InP} > {gamma}{sub GaAs} > {gamma}{sub Si} in breakdown evolution. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Structure carbon materials: clusters, nanotubes, ion-implant polymers and diamonds

International Nuclear Information System (INIS)

Lapchuk, N.M.; Odzhaev, V.B.; Poklonskij, N.A.; Sviridov, D.V.

2009-01-01

The paper summarizes the series of research works dealing with the physics of nanostructured carbon materials, which were awarded a Sevchenko Prize in 2008. The paper considers the mechanism of synthesis of 3D carbon nanospecies and their nanomechanics, magnetic properties of ion-implanted diamonds, as well as the regularities of formation of novel forms of amorphous hydrogenated carbon and metal-carbon nanocomposites via ion bombardment of polymers, as well as electronic, magnetic, and structural properties of ion-implanted polymers an their possible applications in micro- and nanoelectronics. (authors)

Study and optimisation of SIMS performed with He+ and Ne+ bombardment

International Nuclear Information System (INIS)

Pillatsch, L.; Vanhove, N.; Dowsett, D.; Sijbrandij, S.; Notte, J.; Wirtz, T.

2013-01-01

The combination of the high-brightness He + /Ne + atomic level ion source with the detection capabilities of secondary ion mass spectrometry (SIMS) opens up the prospect of obtaining chemical information with high lateral resolution and high sensitivity on the Zeiss ORION helium ion microscope (HIM). A feasibility study with He + and Ne + ion bombardment is presented in order to determine the performance of SIMS analyses using the HIM. Therefore, the sputtering yields, useful yields and detection limits obtained for metallic (Al, Ni and W) as well as semiconductor samples (Si, Ge, GaAs and InP) were investigated. All the experiments were performed on a Cameca IMS4f SIMS instrument which was equipped with a caesium evaporator and oxygen flooding system. For most of the elements, useful yields in the range of 10 −4 to 3 × 10 −2 were measured with either O 2 or Cs flooding. SIMS experiments performed directly on the ORION with a prototype secondary ion extraction and detection system lead to results that are consistent with those obtained on the IMS4f. Taking into account the obtained useful yields and the analytical conditions, such as the ion current and typical dwell time on the ORION HIM, detection limits in the at% range and better can be obtained during SIMS imaging at 10 nm lateral resolution with Ne + bombardment and down to the ppm level when a lateral resolution of 100 nm is chosen. Performing SIMS on the HIM with a good detection limit while maintaining an excellent lateral resolution (<50 nm) is therefore very promising.

Applications of ion scattering in surface analysis

International Nuclear Information System (INIS)

Armour, D.G.

1981-01-01

The study of ion scattering from surfaces has made an increasingly important contribution both to the development of highly surface specific analysis techniques and to the understanding of the atomic collision processes associated with ion bombardment of solid surfaces. From an analysis point of view, by appropriate choice of parameters such as ion energy and species, scattering geometry and target temperature, it is possible to study not only the composition of the surface layer but also the detailed atomic arrangement. The ion scattering technique is thus particularly useful for the study of surface compositional and structural changes caused by adsorption, thermal annealing or ion bombardment treatments of simple or composite materials. Ion bombardment induced desorption, damage or atomic mixing can also be effectively studied using scattering techniques. By reviewing the application of the technique to a variety of these technologically important surface investigations, it is possible to illustrate the way in which ion scattering has developed as the understanding of the underlying physics has improved. (author)

The influence of energetic bombardment on the structure formation of sputtered zinc oxide films. Development of an atomistic growth model and its application to tailor thin film properties

Energy Technology Data Exchange (ETDEWEB)

Koehl, Dominik

2011-02-17

The focus of this work is the investigation of the growth of zinc oxide (ZnO) thin films. It is demonstrated that with a modified, ion beam assisted sputtering (IBAS) process, zinc oxide films can be deposited which exhibit a markedly improved crystalline order. Furthermore, it is demonstrated that intense energetic oxygen ion bombardment can be utilized to change film texture from the typical (002)-self-texture to an a-axis texture where the (002)-planes are perpendicular to the substrate surface. An understanding of the underlying mechanisms is developed which also facilitates a more detailed understanding of the action of ion bombardment during zinc oxide film growth. It is shown that zinc oxide films are susceptible to the influence of ion bombardment particularly in the nucleation regime of growth and that this finding is generally true for all observed structural changes induced by ion bombardment with various species, energies and flux densities. It is demonstrated not only that the initial growth stage plays an important role in the formation of a preferred growth orientation but also that the action of texture forming mechanisms in subsequent growth stages is comparatively weak. (orig.)

The influence of energetic bombardment on the structure formation of sputtered zinc oxide films. Development of an atomistic growth model and its application to tailor thin film properties

International Nuclear Information System (INIS)

Koehl, Dominik

2011-01-01

The focus of this work is the investigation of the growth of zinc oxide (ZnO) thin films. It is demonstrated that with a modified, ion beam assisted sputtering (IBAS) process, zinc oxide films can be deposited which exhibit a markedly improved crystalline order. Furthermore, it is demonstrated that intense energetic oxygen ion bombardment can be utilized to change film texture from the typical (002)-self-texture to an a-axis texture where the (002)-planes are perpendicular to the substrate surface. An understanding of the underlying mechanisms is developed which also facilitates a more detailed understanding of the action of ion bombardment during zinc oxide film growth. It is shown that zinc oxide films are susceptible to the influence of ion bombardment particularly in the nucleation regime of growth and that this finding is generally true for all observed structural changes induced by ion bombardment with various species, energies and flux densities. It is demonstrated not only that the initial growth stage plays an important role in the formation of a preferred growth orientation but also that the action of texture forming mechanisms in subsequent growth stages is comparatively weak. (orig.)

Ion beam nanopatterning and micro-Raman spectroscopy analysis on HOPG for testing FIB performances

International Nuclear Information System (INIS)

Archanjo, B.S.; Maciel, I.O.; Martins Ferreira, E.H.; Peripolli, S.B.; Damasceno, J.C.; Achete, C.A.; Jorio, A.

2011-01-01

This work reports Ga + focused ion beam nanopatterning to create amorphous defects with periodic square arrays in highly oriented pyrolytic graphite and the use of Raman spectroscopy as a new protocol to test and compare progresses in ion beam optics, for low fluence bombardment or fast writing speed. This can be ultimately used as a metrological tool for comparing different FIB machines and can contribute to Focused Ion Beam (FIB) development in general for tailoring nanostructures with higher precision. In order to do that, the amount of ion at each spot was varied from about 10 6 down to roughly 1 ion per dot. These defects were also analyzed by using high resolution scanning electron microscopy and atomic force microscopy. The sensitivities of these techniques were compared and a geometrical model is proposed for micro-Raman spectroscopy in which the intensity of the defect induced D band, for a fixed ion dose, is associated with the diameter of the ion beam. In addition, the lateral increase in the bombarded spot due to the cascade effect of the ions on graphite surface was extracted from this model. A semi-quantitative analysis of the distribution of ions at low doses per dot or high writing speed for soft modification of materials is discussed. -- Highlights: → Highly oriented pyrolytic graphite surface is bombarded using a focused ion beam. → Raman spectroscopy is used to propose a new protocol to test focused ion beam optics. → Scattering diameter of the ions on HOPG surface is experimentally obtained. → Optical limitations of the ion column in fast writing speed are discussed. → Small level of modifications is considered for changing graphene conductive properties.

High resistivity in InP by helium bombardment

International Nuclear Information System (INIS)

Focht, M.W.; Macrander, A.T.; Schwartz, B.; Feldman, L.C.

1984-01-01

Helium implants over a fluence range from 10 11 to 10 16 ions/cm 2 , reproducibly form high resistivity regions in both p- and n-type InP. Average resistivities of greater than 10 9 Ω cm for p-type InP and of 10 3 Ω cm for n-type InP are reported. Results are presented of a Monte Carlo simulation of helium bombardment into the compound target InP that yields the mean projected range and the range straggling

Energy and dose characteristics of ion bombardment during pulsed laser deposition of thin films under pulsed electric field

International Nuclear Information System (INIS)

Fominski, V.Yu.; Nevolin, V.N.; Smurov, I.

2004-01-01

Experiments on pulsed laser deposition of Fe films on Si substrates were performed with the aim to analyze the role of factors determining the formation of an energy spectrum and a dose of ions bombarding the film in strong pulsed electric fields. The amplitude of the high-voltage pulse (-40 kV) applied to the substrate and the laser fluence at the Fe target were fixed during the deposition. Owing to the high laser fluence (8 J/cm 2 ) at a relatively low power (20 mJ), the ionization of the laser plume was high, but the Fe vapor pressure near the substrate was low enough to avoid arcing. Electric signals from a target exposed to laser radiation were measured under different conditions (at different delay times) of application of electric pulses. The Si(100) substrates were analyzed using Rutherford ion backscattering/channeling spectrometry. The ion implantation dose occurred to be the highest if the high-voltage pulse was applied at a moment of time when the ion component of the plume approached the substrate. In this case, the implanted ions had the highest energy determined by the amplitude of the electric pulse. An advance or delay in applying a high-voltage pulse caused the ion dose and energy to decrease. A physical model incorporating three possible modes of ion implantation was proposed for the interpretation of the experimental results. If a laser plume was formed in the external field, ions were accelerated from the front of the dense plasma, and the ion current depended on the gas-dynamic expansion of the plume. The application of a high-voltage pulse, at the instant when the front approached the substrate, maintained the mode that was characteristic of the traditional plasma immersion ion implantation, and the ion current was governed by the dynamics of the plasma sheath in the substrate-to-target gap. In the case of an extremely late application of a high-voltage pulse, ions retained in the entire volume of the experimental chamber (as a result of the

Secondary emission from a CuBe target due to bombardment with parent and fragment ions of ammonia and phosphine

International Nuclear Information System (INIS)

Maerk, T.D.

1977-01-01

The secondary electron emission of the first dynode of a CuBe alloy sixteen dynode electron multiplier has been studied in the course of electron impact ionization studies of ammonia and phosphine. Relative secondary electron emission coefficients have been obtained for the singly and doubly charged parent and fragment ions of ammonia, ammonia-d 3 , phosphine and phosphine-d 3 for kinetic energies of 5,25 and 10,5 keV. It has been found, that in general deuterated ions have smaller γ coefficients, that ammonia ions have larger γ coefficients than corresponding phosphine ions, and that the γ coefficients increase with the complexity of the ion under study. (Auth.)

Photon counting imaging and centroiding with an electron-bombarded CCD using single molecule localisation software

International Nuclear Information System (INIS)

Hirvonen, Liisa M.; Barber, Matthew J.; Suhling, Klaus

2016-01-01

Photon event centroiding in photon counting imaging and single-molecule localisation in super-resolution fluorescence microscopy share many traits. Although photon event centroiding has traditionally been performed with simple single-iteration algorithms, we recently reported that iterative fitting algorithms originally developed for single-molecule localisation fluorescence microscopy work very well when applied to centroiding photon events imaged with an MCP-intensified CMOS camera. Here, we have applied these algorithms for centroiding of photon events from an electron-bombarded CCD (EBCCD). We find that centroiding algorithms based on iterative fitting of the photon events yield excellent results and allow fitting of overlapping photon events, a feature not reported before and an important aspect to facilitate an increased count rate and shorter acquisition times.

Effect of heating on the behaviors of hydrogen in C-TiC films with auger electron spectroscopy and secondary ion mass spectroscopy analyses

International Nuclear Information System (INIS)

Zou, Y.; Wang, L.W.; Huang, N.K.

2007-01-01

C-TiC films with a content of 75% TiC were prepared with magnetron sputtering deposition followed by Ar + ion bombardment. Effect of heating on the behaviors of hydrogen in C-TiC films before and after heating was studied with Auger Electron Spectroscopy and Secondary Ion Mass Spectroscopy (SIMS) analyses. SIMS depth profiles of hydrogen after H + ion implantation and thermal treatment show different hydrogen concentrations in C-TiC coatings and stainless steel. SIMS measurements show the existence of TiH, TiH 2 , CH 3 , CH 4 , C 2 H 2 bonds in the films after H + ion irradiation and the changes in the Ti LMM, Ti LMV and C KLL Auger line shape reveal that they have a good hydrogen retention ability after heating up to the temperature 393 K. All the results show that C-TiC coatings can be used as a hydrogen retainer or hydrogen permeable barrier on stainless steel to protect it from hydrogen brittleness

L-subshell ionization studies in Au and Bi for 19F and 28Si large-ion bombardment

International Nuclear Information System (INIS)

Padhi, H.C.; Dhal, B.B.; Nanal, V.; Prasad, K.G.; Tandon, P.N.; Trautmann, D.

1996-01-01

L x-ray production and subshell ionization cross sections of Au and Bi have been measured for the bombardment of 19 F and 28 Si ions in the energy range 30 endash 57 MeV and 36 endash 84 MeV, respectively. Comparison of the Lα x-ray production cross sections of Au with the earlier data by Malhi and Gray [Phys. Rev. A 44, 7199 (1991)] shows reasonable agreement for 19 F impact and their data are consistently higher for 28 Si at all energies. The measured Lα line energy shows a shift towards higher energy, which appears to be proportional to the square of the projectile atomic number at all impact energies. This shift suggests the presence of multiple ionization in the L and M shells with a simultaneous production of four M holes in Au at the impact energy of 3 MeVu -1 of 28 Si. The L-subshell ionization cross sections obtained from the measured x-ray production cross sections have been compared with the semiclassical approximation and perturbed stationary state theory with energy loss, Coulomb deflection, and relativistic correction for the electron motion calculations, which show large deviations for the L 1 subshell. The L 2 - and L 3 -subshell ionization cross sections are underestimated by both the theories by a factor of 1.2 endash 4.0 for 28 Si impact whereas for the 19 F case there is reasonable agreement for the L 3 cross section but the L 2 cross section is underestimated by 20 endash 30%. copyright 1996 The American Physical Society

Nanocavity formation processes in MgO(100) by light ion (D, He, Li) and heavy ion (Kr, Cu, Au) implantation

OpenAIRE

Veen, A. van; Fedorov, A.V.; Schut, H.; Labohm, F.; Kooi, B.J.; Hosson, J.Th.M. De

2002-01-01

In studies on the controlled growth of metallic precipitates in MgO it is attempted to use nanometer size cavities as precursors for formation of metallic precipitates. In MgO nanocavities can easily be generated by light gas ion bombardment at room temperature with typically 30 keV ion energy to a dose of 10^16 cm–2, followed by annealing to 1300 K. It has been shown earlier by transmission electron microscopy (TEM) that the cavities (thickness 2–3 nm and length/width 5–10 nm) have a perfect...

A Monte Carlo simulation code for calculating damage and particle transport in solids: The case for electron-bombarded solids for electron energies up to 900 MeV

Energy Technology Data Exchange (ETDEWEB)

Yan, Qiang [College of Nuclear Science and Technology, Harbin Engineering University, Harbin 150001 (China); Shao, Lin, E-mail: lshao@tamu.edu [Department of Nuclear Engineering, Texas A& M University, College Station, TX 77843 (United States)

2017-03-15

Current popular Monte Carlo simulation codes for simulating electron bombardment in solids focus primarily on electron trajectories, instead of electron-induced displacements. Here we report a Monte Carol simulation code, DEEPER (damage creation and particle transport in matter), developed for calculating 3-D distributions of displacements produced by electrons of incident energies up to 900 MeV. Electron elastic scattering is calculated by using full-Mott cross sections for high accuracy, and primary-knock-on-atoms (PKAs)-induced damage cascades are modeled using ZBL potential. We compare and show large differences in 3-D distributions of displacements and electrons in electron-irradiated Fe. The distributions of total displacements are similar to that of PKAs at low electron energies. But they are substantially different for higher energy electrons due to the shifting of PKA energy spectra towards higher energies. The study is important to evaluate electron-induced radiation damage, for the applications using high flux electron beams to intentionally introduce defects and using an electron analysis beam for microstructural characterization of nuclear materials.

Molecular dynamics simulations with electronic stopping can reproduce experimental sputtering yields of metals impacted by large cluster ions

Science.gov (United States)

Tian, Jiting; Zhou, Wei; Feng, Qijie; Zheng, Jian

2018-03-01

An unsolved problem in research of sputtering from metals induced by energetic large cluster ions is that molecular dynamics (MD) simulations often produce sputtering yields much higher than experimental results. Different from the previous simulations considering only elastic atomic interactions (nuclear stopping), here we incorporate inelastic electrons-atoms interactions (electronic stopping, ES) into MD simulations using a friction model. In this way we have simulated continuous 45° impacts of 10-20 keV C60 on a Ag(111) surface, and found that the calculated sputtering yields can be very close to the experimental results when the model parameter is appropriately assigned. Conversely, when we ignore the effect of ES, the yields are much higher, just like the previous studies. We further expand our research to the sputtering of Au induced by continuous keV C60 or Ar100 bombardments, and obtain quite similar results. Our study indicates that the gap between the experimental and the simulated sputtering yields is probably induced by the ignorance of ES in the simulations, and that a careful treatment of this issue is important for simulations of cluster-ion-induced sputtering, especially for those aiming to compare with experiments.

Study of secondary electron emission from thin carbon targets with swift charged particles: heavy ions, hydrogen ions; Etude experimentale de l`emission electronique secondaire de cibles minces de carbone sous l`impact de projectiles rapides: ions lourds, ions hydrogene (atomiques, moleculaires ou sous forme d`agregats)

Energy Technology Data Exchange (ETDEWEB)

Billebaud, A

1995-07-12

The main subject of this work is the study of electron emission from the two surfaces of thin solid targets bombarded with swift charged particles. The slowing down of swift ions in matter is mainly due to inelastic interaction with target electrons (ionization, excitation): the energy transfer to target electrons is responsible for the secondary electron emission process. The phenomenological and theoretical descriptions of this phenomena are the subject of the first chapter. We focused on secondary electron emission induced by different kind of projectiles on thin carbon foils. In chapter two we describe hydrogen cluster induced electron emission measurement between 40 and 120 keV/proton. These projectiles, composed of several atoms, allowed us to study and highlight collective effects of the electron emission process. We extended our study of electron emission to molecular (H{sub 2}{sup +}, H{sub 3}{sup +}) and composite (H{sup -}, H{sup 0}) projectiles at higher energies (<= 2 MeV): we have designed an experimental set-up devoted to electron emission statistics measurements which allowed us to study, among others things, the role of projectile electrons in secondary electron emission. This experiment is described in the third chapter. Finally, the fourth chapter describes new measurements of electron emission induced by energetic (13 MeV/u) and highly charged argon ion provided by the medium energy beam line (SME) of GANIL (Caen), which have been analyzed in the framework of a semi-empirical model of secondary electron emission. This set of experiments brings new results on composite projectile interaction with matter, and on the consequences of high energy deposition in solids. (author).

PIC simulation of the electron-ion collision effects on suprathermal electrons

International Nuclear Information System (INIS)

Wu Yanqing; Han Shensheng

2000-01-01

The generation and transportation of suprathermal electrons are important to both traditional ICF scheme and 'Fast Ignition' scheme. The author discusses the effects of electron-ion collision on the generation and transportation of the suprathermal electrons by parametric instability. It indicates that the weak electron-ion term in the PIC simulation results in the enhancement of the collisional absorption and increase of the hot electron temperature and reduction in the maximum electrostatic field amplitude while wave breaking. Therefore the energy and distribution of the suprathermal electrons are changed. They are distributed more close to the phase velocity of the electrostatic wave than the case without electron-ion collision term. The electron-ion collision enhances the self-consistent field and impedes the suprathermal electron transportation. These factors also reduce the suprathermal electron energy. In addition, the authors discuss the effect of initial condition on PIC simulation to ensure that the results are correct

Secondary electron emission of thin carbon foils under the impact of hydrogen atoms, ions and molecular ions, under energies within the MeV range; Multiplicite des electrons secondaires emis par des cibles minces de carbone sous l'impact de projectiles H0, H2+, H3+ d'energie de l'ordre du MeV

Energy Technology Data Exchange (ETDEWEB)

Vidovic, Z

1997-06-15

This work focuses on the study of the emission statistics of secondary electrons from thin carbon foils bombarded with H{sup 0}, H{sub 2}{sup +} and H{sub 3}{sup +} projectiles in the 0.25-2.2 MeV energy range. The phenomenon of secondary electron emission from solids under the impact of swift ions is mainly due to inelastic interactions with target electrons. The phenomenological and theoretical descriptions, as well as a summary of the main theoretical models are the subject of the first chapter. The experimental set-up used to measure event by event the electron emission of the two faces of a thin carbon foil traversed by an energetic projectile is described in the chapter two. In this chapter are also presented the method and algorithms used to process experimental spectra in order to obtain the statistical distribution of the emitted electrons. Chapter three presents the measurements of secondary electron emission induced by H atoms passing through thin carbon foils. The secondary electron yields are studied in correlation with the emergent projectile charge state. We show the peculiar role of the projectile electron, whether it remains or not bound to the incident proton. The fourth chapter is dedicated to the secondary electron emission induced by H{sub 2}{sup +} and H{sub 3}{sup +} polyatomic ions. The results are interpreted in terms of collective effects in the interactions of these ions with solids. The role of the proximity of the protons, molecular ion fragments, upon the amplitude of these collective effects is evidenced from the study of the statistics of forward emission. These experiences allowed us to shed light on various aspects of atom and polyatomic ion inter-actions with solid surfaces. (author)

Heavy-ion induced desorption yields of amorphous carbon films bombarded with 4.2 MeV/u lead ions

CERN Document Server

Mahner, E; Küchler, D; Scrivens, R; Costa Pinto, P; Yin Vallgren, C; Bender, M

2011-01-01

During the past decade, intense experimental studies on the heavy-ion induced molecular desorption were performed in several particle accelerator laboratories worldwide in order to understand and overcome large dynamic pressure rises caused by lost beam ions. Different target materials and various coatings were studied for desorption and mitigation techniques were applied to heavy-ion accelerators. For the upgrade of the CERN injector complex, a coating of the Super Proton Synchrotron (SPS) vacuum system with a thin film of amorphous carbon is under study to mitigate the electron cloud effect observed during SPS operation with the nominal proton beam for the Large Hadron Collider (LHC). Since the SPS is also part of the heavy-ion injector chain for LHC, dynamic vacuum studies of amorphous carbon films are important to determine their ion induced desorption yields. At the CERN Heavy Ion Accelerator (LINAC 3), carbon-coated accelerator-type stainless steel vacuum chambers were tested for desorption using 4.2 Me...

Many-electron model for multiple ionization in atomic collisions

International Nuclear Information System (INIS)

Archubi, C D; Montanari, C C; Miraglia, J E

2007-01-01

We have developed a many-electron model for multiple ionization of heavy atoms bombarded by bare ions. It is based on the transport equation for an ion in an inhomogeneous electronic density. Ionization probabilities are obtained by employing the shell-to-shell local plasma approximation with the Levine and Louie dielectric function to take into account the binding energy of each shell. Post-collisional contributions due to Auger-like processes are taken into account by employing recent photoemission data. Results for single-to-quadruple ionization of Ne, Ar, Kr and Xe by protons are presented showing a very good agreement with experimental data

Many-electron model for multiple ionization in atomic collisions

Energy Technology Data Exchange (ETDEWEB)

Archubi, C D [Instituto de AstronomIa y Fisica del Espacio, Casilla de Correo 67, Sucursal 28 (C1428EGA) Buenos Aires (Argentina); Montanari, C C [Instituto de AstronomIa y Fisica del Espacio, Casilla de Correo 67, Sucursal 28 (C1428EGA) Buenos Aires (Argentina); Miraglia, J E [Instituto de AstronomIa y Fisica del Espacio, Casilla de Correo 67, Sucursal 28 (C1428EGA) Buenos Aires (Argentina)

2007-03-14

We have developed a many-electron model for multiple ionization of heavy atoms bombarded by bare ions. It is based on the transport equation for an ion in an inhomogeneous electronic density. Ionization probabilities are obtained by employing the shell-to-shell local plasma approximation with the Levine and Louie dielectric function to take into account the binding energy of each shell. Post-collisional contributions due to Auger-like processes are taken into account by employing recent photoemission data. Results for single-to-quadruple ionization of Ne, Ar, Kr and Xe by protons are presented showing a very good agreement with experimental data.

Imaging of fullerene-like structures in CNx thin films by electron microscopy; sample preparation artefacts due to ion-beam milling

International Nuclear Information System (INIS)

Czigany, Zs.; Neidhardt, J.; Brunell, I.F.; Hultman, L.

2003-01-01

The microstructure of CN x thin films, deposited by reactive magnetron sputtering, was investigated by transmission electron microscopy (TEM) at 200 kV in plan-view and cross-sectional samples. Imaging artefacts arise in high-resolution TEM due to overlap of nm-sized fullerene-like features for specimen thickness above 5 nm. The thinnest and apparently artefact-free areas were obtained at the fracture edges of plan-view specimens floated-off from NaCl substrates. Cross-sectional samples were prepared by ion-beam milling at low energy to minimize sample preparation artefacts. The depth of the ion-bombardment-induced surface amorphization was determined by TEM cross sections of ion-milled fullerene-like CN x surfaces. The thickness of the damaged surface layer at 5 deg. grazing incidence was 13 and 10 nm at 3 and 0.8 keV, respectively, which is approximately three times larger than that observed on Si prepared under the same conditions. The shallowest damage depth, observed for 0.25 keV, was less than 1 nm. Chemical changes due to N loss and graphitization were also observed by X-ray photoelectron spectroscopy. As a consequence of chemical effects, sputtering rates of CN x films were similar to that of Si, which enables relatively fast ion-milling procedure compared to carbon compounds. No electron beam damage of fullerene-like CN x was observed at 200 kV

Ion acceleration in modulated electron beams

International Nuclear Information System (INIS)

Bonch-Osmolovskij, A.G.; Dolya, S.N.

1977-01-01

A method of ion acceleration in modulated electron beams is considered. Electron density and energy of their rotational motion are relatively low. However the effective ion-accelerating field is not less than 10 MeV/m. The electron and ion numbers in an individual bunch are also relatively small, although the number of produced bunches per time unit is great. Some aspects of realization of the method are considered. Possible parameters of the accelerator are given. At 50 keV electron energy and 1 kA beam current a modulation is realized at a wave length of 30 cm. The ion-accelerating field is 12 MeV/m. The bunch number is 2x10 3 in one pulse at a gun pulse duration of 2 μs. With a pulse repetition frequency of 10 2 Hz the number of accelerated ions can reach 10 13 -10 14 per second

MD simulation of atomic displacements in metals and metallic bilayers under low energy ion bombardment at 300 K

International Nuclear Information System (INIS)

Kornich, G.V.; Betz, G.; Bazhin, A.I.

1999-01-01

MD simulations of 100 eV Ar ion bombardment of (1 0 0) Ni and Al as well as Al/Ni bilayer crystals at 300 K have been performed and compared to previous calculations at 0 K. The Al/Ni bilayer crystal consisted of one Al layer on a (1 0 0) Ni substrate. Sputtering yields for Ni and Al/Ni show no temperature dependence, while for Al a pronounced increase with temperature was observed. The contributions of different mechanisms to the production of surface and bulk defects are discussed. The mean square displacement (MSD) of atoms is in all cases larger at 300 K as compared to 0 K. The larger MSD at 300 K is mainly due to an increase in lateral (perpendicular to the ion beam) motion of displaced atoms. Similar the number of atomic jumps, in which an atom leaves its original Wigner-Seitz cell, increases in all cases with temperature. For the pure elements the production of bulk vacancies and interstitials decreases with temperature, but the number of surface vacancies and ad-atoms increases with temperature. For the bilayer system practically no temperature dependence for defects was observed

Electron-vibrational transitions under molecular ions collisions with slow electrons

International Nuclear Information System (INIS)

Andreev, E.A.

1993-01-01

A concept of a multichannel quantum defect is considered and basic theoretic ratios of inelastic collisional processes with the participation of molecular positive ions and slow electrons playing an important role both in atmospheric and laboratory plasma, are presented. The problem of scattering channel number limitation with the provision of S-matrix unique character is considered. Different models of electron rotation-vibrational connection under collision of two-atom molecular ions with slow electrons are analysed. Taking N 2 + as an example, a high efficiency of transitions between different electron states of a molecular ion is shown. 73 refs., 9 figs., 1 tab

Proposed LLNL electron beam ion trap

International Nuclear Information System (INIS)

Marrs, R.E.; Egan, P.O.; Proctor, I.; Levine, M.A.; Hansen, L.; Kajiyama, Y.; Wolgast, R.

1985-01-01

The interaction of energetic electrons with highly charged ions is of great importance to several research fields such as astrophysics, laser fusion and magnetic fusion. In spite of this importance there are almost no measurements of electron interaction cross sections for ions more than a few times ionized. To address this problem an electron beam ion trap (EBIT) is being developed at LLNL. The device is essentially an EBIS except that it is not intended as a source of extracted ions. Instead the (variable energy) electron beam interacting with the confined ions will be used to obtain measurements of ionization cross sections, dielectronic recombination cross sections, radiative recombination cross sections, energy levels and oscillator strengths. Charge-exchange recombinaion cross sections with neutral gasses could also be measured. The goal is to produce and study elements in many different charge states up to He-like xenon and Ne-like uranium. 5 refs., 2 figs

Electron energy recovery system for negative ion sources

International Nuclear Information System (INIS)

Dagenhart, W.K.; Stirling, W.L.

1982-01-01

An electron energy recovery system for negative ion sources is provided. The system, employs crossed electric and magnetic fields to separate the electrons from ions as they are extracted from a negative ion source plasma generator and before the ions are accelerated to their full kinetic energy. With the electric and magnetic fields oriented 90* to each other, the electrons are separated from the plasma and remain at approximately the electrical potential of the generator in which they were generated. The electrons migrate from the ion beam path in a precessing motion out of the ion accelerating field region into an electron recovery region provided by a specially designed electron collector electrode. The electron collector electrode is uniformly spaced from a surface of the ion generator which is transverse to the direction of migration of the electrons and the two surfaces are contoured in a matching relationship which departs from a planar configuration to provide an electric field component in the recovery region which is parallel to the magnetic field thereby forcing the electrons to be directed into and collected by the electron collector electrode. The collector electrode is maintained at a potential slightly positive with respect to the ion generator so that the electrons are collected at a small fraction of the full accelerating supply voltage energy

Secondary electron emission of thin carbon foils under the impact of hydrogen atoms, ions and molecular ions, under energies within the MeV range; Multiplicite des electrons secondaires emis par des cibles minces de carbone sous l'impact de projectiles H0, H2+, H3+ d'energie de l'ordre du MeV

Energy Technology Data Exchange (ETDEWEB)

Vidovic, Z

1997-06-15

This work focuses on the study of the emission statistics of secondary electrons from thin carbon foils bombarded with H{sup 0}, H{sub 2}{sup +} and H{sub 3}{sup +} projectiles in the 0.25-2.2 MeV energy range. The phenomenon of secondary electron emission from solids under the impact of swift ions is mainly due to inelastic interactions with target electrons. The phenomenological and theoretical descriptions, as well as a summary of the main theoretical models are the subject of the first chapter. The experimental set-up used to measure event by event the electron emission of the two faces of a thin carbon foil traversed by an energetic projectile is described in the chapter two. In this chapter are also presented the method and algorithms used to process experimental spectra in order to obtain the statistical distribution of the emitted electrons. Chapter three presents the measurements of secondary electron emission induced by H atoms passing through thin carbon foils. The secondary electron yields are studied in correlation with the emergent projectile charge state. We show the peculiar role of the projectile electron, whether it remains or not bound to the incident proton. The fourth chapter is dedicated to the secondary electron emission induced by H{sub 2}{sup +} and H{sub 3}{sup +} polyatomic ions. The results are interpreted in terms of collective effects in the interactions of these ions with solids. The role of the proximity of the protons, molecular ion fragments, upon the amplitude of these collective effects is evidenced from the study of the statistics of forward emission. These experiences allowed us to shed light on various aspects of atom and polyatomic ion inter-actions with solid surfaces. (author)

Damage accumulation in ceramics during ion implantation

International Nuclear Information System (INIS)

McHargue, C.J.; Farlow, G.C.; Begun, G.M.; Williams, J.M.; White, C.W.; Appleton, B.R.; Sklad, P.S.; Angelini, P.

1985-01-01

The damage structures of α-Al 2 O 3 and α-SiC were examined as functions of ion implantation parameters using Rutherford backscattering-channeling, analytical electron microscopy, and Raman spectroscopy. Low temperatures or high fluences of cations favor formation of the amorphous state. At 300 0 K, mass of the bombarding species has only a small effect on residual damage, but certain ion species appear to stabilize the damage microstructure and increase the rate of approach to the amorphous state. The type of chemical bonding present in the host lattice is an important factor in determining the residual damage state

Review of heavy ion reaction mechanisms

International Nuclear Information System (INIS)

Ngo, C.

1986-04-01

We review some of the many aspects of heavy-ion reaction mechanisms observed at bombarding energies smaller than approximately 50 MeV/u that is to say in what is called the low bombarding energy domain and the intermediate bombarding energy domain. We emphasize the results concerning the use of very heavy projectiles which has led to the observation of new mechanisms

Surface science analysis of GaAs photocathodes following sustained electron beam delivery

Directory of Open Access Journals (Sweden)

V. Shutthanandan

2012-06-01

Full Text Available Degradation of the photocathode materials employed in photoinjectors represents a challenge for sustained operation of nuclear physics accelerators and high power free electron lasers (FEL. Photocathode quantum efficiency degradation is due to residual gases in the electron source vacuum system being ionized and accelerated back to the photocathode. These investigations are a first attempt to characterize the nature of the photocathode degradation, and employ multiple surface and bulk analysis techniques to investigate damage mechanisms including sputtering of the Cs-oxidant surface monolayer, other surface chemistry effects, and ion implantation. Surface and bulk analysis studies were conducted on two GaAs photocathodes, which were removed from the JLab FEL DC photoemission gun after delivering electron beam, and two control samples. The analysis techniques include helium ion microscopy, Rutherford backscattering spectrometry (RBS, atomic force microscopy, and secondary ion mass spectrometry (SIMS. In addition, two high-polarization strained superlattice GaAs photocathode samples, one removed from the continuous electron beam accelerator facility (CEBAF photoinjector and one unused, were also analyzed using transmission electron microscopy (TEM and SIMS. It was found that heat cleaning the FEL GaAs wafer introduces surface roughness, which seems to be reduced by prolonged use. The bulk GaAs samples retained a fairly well organized crystalline structure after delivering beam but show evidence of Cs depletion on the surface. Within the precision of the SIMS and RBS measurements, the data showed no indication of hydrogen implantation or lattice damage from ion back bombardment in the bulk GaAs wafers. In contrast, SIMS and TEM measurements of the strained superlattice photocathode show clear crystal damage in the wafer from ion back bombardment.

Study on the desorption yield for natural botanic sample induced by energetic heavy ions

International Nuclear Information System (INIS)

Xue, J.M.; Wang, Y.G.; Du, G.H.; Yan, S.; Zhao, W.J.

2002-01-01

The dependence of desorption yield for the natural botanic sample bombarded with heavy ion on the electronic stopping power (S e ) and dose has been measured by weighing sample mass before and after irradiation. Primary ions including 50 keV N + , 1.5 MeV F + , 3.0 MeV F 2+ , 4.0 MeV F 2+ and 3.0 MeV Si 2+ were used in the experiment. Three megaelectron volts of F 2+ with doses ranging from 4x10 15 to 4x10 16 ions/cm 2 were used in order to investigate the influence of ion dose. A mass spectrum from the sample bombarded with 3 MeV Si 2+ was also taken for a better understanding of the desorption process. Results show that the natural botanic sample is very easily to be desorpted. The yield of MeV heavy ions can be as high as thousands CH 2 O/ion, and significantly depends on both the S e and dose. The measured yields increase quickly with S e , but drop down with increasing ion dose. These results fit roughly with the prediction of the pressure pulse model