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Sample records for electrochemical atomic layer

  1. Deposition of HgTe by electrochemical atomic layer epitaxy (EC-ALE)

    CSIR Research Space (South Africa)

    Venkatasamy, V

    2006-04-01

    Full Text Available This paper describes the first instance of HgTe growth by electrochemical atomic layer epitaxy (EC-ALE). EC-ALE is the electrochemical analog of atomic layer epitaxy (ALE) and atomic layer deposition (ALD), all of which are based on the growth...

  2. The possibility of multi-layer nanofabrication via atomic force microscope-based pulse electrochemical nanopatterning

    Science.gov (United States)

    Kim, Uk Su; Morita, Noboru; Lee, Deug Woo; Jun, Martin; Park, Jeong Woo

    2017-05-01

    Pulse electrochemical nanopatterning, a non-contact scanning probe lithography process using ultrashort voltage pulses, is based primarily on an electrochemical machining process using localized electrochemical oxidation between a sharp tool tip and the sample surface. In this study, nanoscale oxide patterns were formed on silicon Si (100) wafer surfaces via electrochemical surface nanopatterning, by supplying external pulsed currents through non-contact atomic force microscopy. Nanoscale oxide width and height were controlled by modulating the applied pulse duration. Additionally, protruding nanoscale oxides were removed completely by simple chemical etching, showing a depressed pattern on the sample substrate surface. Nanoscale two-dimensional oxides, prepared by a localized electrochemical reaction, can be defined easily by controlling physical and electrical variables, before proceeding further to a layer-by-layer nanofabrication process.

  3. The Electrochemical Atomic Layer Deposition of Pt and Pd nanoparticles on Ni foam for the electrooxidation of alcohols

    CSIR Research Space (South Africa)

    Modibedi, RM

    2012-10-01

    Full Text Available Electrodeposition of Pt and Pd metal by surface limited redox replacement reactions was performed using the electrochemical atomic layer deposition. Carbon paper and Ni foam were used as substrates for metal deposition. Supported Pt and Pd...

  4. Recent Development of Advanced Electrode Materials by Atomic Layer Deposition for Electrochemical Energy Storage.

    Science.gov (United States)

    Guan, Cao; Wang, John

    2016-10-01

    Electrode materials play a decisive role in almost all electrochemical energy storage devices, determining their overall performance. Proper selection, design and fabrication of electrode materials have thus been regarded as one of the most critical steps in achieving high electrochemical energy storage performance. As an advanced nanotechnology for thin films and surfaces with conformal interfacial features and well controllable deposition thickness, atomic layer deposition (ALD) has been successfully developed for deposition and surface modification of electrode materials, where there are considerable issues of interfacial and surface chemistry at atomic and nanometer scale. In addition, ALD has shown great potential in construction of novel nanostructured active materials that otherwise can be hardly obtained by other processing techniques, such as those solution-based processing and chemical vapor deposition (CVD) techniques. This review focuses on the recent development of ALD for the design and delivery of advanced electrode materials in electrochemical energy storage devices, where typical examples will be highlighted and analyzed, and the merits and challenges of ALD for applications in energy storage will also be discussed.

  5. Atomic Layer Deposition Alumina-Passivated Silicon Nanowires: Probing the Transition from Electrochemical Double-Layer Capacitor to Electrolytic Capacitor.

    Science.gov (United States)

    Gaboriau, Dorian; Boniface, Maxime; Valero, Anthony; Aldakov, Dmitry; Brousse, Thierry; Gentile, Pascal; Sadki, Said

    2017-04-19

    Silicon nanowires were coated by a 1-5 nm thin alumina layer by atomic layer deposition (ALD) in order to replace poorly reproducible and unstable native silicon oxide by a highly conformal passivating alumina layer. The surface coating enabled probing the behavior of symmetric devices using such electrodes in the EMI-TFSI electrolyte, allowing us to attain a large cell voltage up to 6 V in ionic liquid, together with very high cyclability with less than 4% capacitance fade after 10 6 charge/discharge cycles. These results yielded fruitful insights into the transition between an electrochemical double-layer capacitor behavior and an electrolytic capacitor behavior. Ultimately, thin ALD dielectric coatings can be used to obtain hybrid devices exhibiting large cell voltage and excellent cycle life of dielectric capacitors, while retaining energy and power densities close to the ones displayed by supercapacitors.

  6. Optimization studies of HgSe thin film deposition by electrochemical atomic layer epitaxy (EC-ALE)

    CSIR Research Space (South Africa)

    Venkatasamy, V

    2006-06-01

    Full Text Available Studies of the optimization of HgSe thin film deposition using electrochemical atomic layer epitaxy (EC-ALE) are reported. Cyclic voltammetry was used to obtain approximate deposition potentials for each element. These potentials were then coupled...

  7. Layering and Ordering in Electrochemical Double Layers

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yihua [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, United States; Kawaguchi, Tomoya [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, United States; Pierce, Michael S. [Rochester Institute of Technology, School of Physics and Astronomy, Rochester, New York 14623, United States; Komanicky, Vladimir [Faculty of Science, Safarik University, 041 54 Kosice, Slovakia; You, Hoydoo [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, United States

    2018-02-26

    Electrochemical double layers (EDL) form at electrified interfaces. While Gouy-Chapman model describes moderately charged EDL, formation of Stern layers was predicted for highly charged EDL. Our results provide structural evidence for a Stern layer of cations, at potentials close to hydrogen evolution in alkali fluoride and chloride electrolytes. Layering was observed by x-ray crystal truncation rods and atomic-scale recoil responses of Pt(111) surface layers. Ordering in the layer is confirmed by glancing-incidence in-plane diffraction measurements.

  8. Atom-scale covalent electrochemical modification of single-layer graphene on SiC substrates by diaryliodonium salts

    International Nuclear Information System (INIS)

    Gearba, Raluca I.; Mueller, Kory M.; Veneman, Peter A.; Holliday, Bradley J.; Chan, Calvin K.; Stevenson, Keith J.

    2015-01-01

    Owing to its high conductivity, graphene holds promise as an electrode for energy devices such as batteries and photovoltaics. However, to this end, the work function and doping levels in graphene need to be precisely tuned. One promising route for modifying graphene's electronic properties is via controlled covalent electrochemical grafting of molecules. We show that by employing diaryliodonium salts instead of the commonly used diazonium salts, spontaneous functionalization is avoided. This then allows for precise tuning of the grafting density. Moreover, by employing bis(4-nitrophenyl)iodonium(III) tetrafluoroborate (DNP) salt calibration curves, the surface functionalization density (coverage) of glassy carbon was controlled using cyclic voltammetry in varying salt concentrations. These electro-grafting conditions and calibration curves translated directly over to modifying single layer epitaxial graphene substrates (grown on insulating 6H-SiC (0 0 0 1)). In addition to quantifying the functionalization densities using electrochemical methods, samples with low grafting densities were characterized by low-temperature scanning tunneling microscopy (LT-STM). We show that the use of buffer-layer free graphene substrates is required for clear observation of the nitrophenyl modifications. Furthermore, atomically-resolved STM images of single site modifications were obtained, showing no preferential grafting at defect sites or SiC step edges as supposed previously in the literature. Most of the grafts exhibit threefold symmetry, but occasional extended modifications (larger than 4 nm) were observed as well

  9. Formation of HgSe thin films using electrochemical atomic Layer epitaxy

    CSIR Research Space (South Africa)

    Mathe, MK

    2005-09-01

    Full Text Available . Bard and I. Rubenstein, Edi- tors, Vol. 21, p. 75, Marcel Dekker, New York �1999�. 38. J. L. Stickney, in Advances in Electrochemical Science and Engineering, D. M. Kolb and R. Alkire, Editors, Vol. 7, p. 1, Wiley-VCH, Weinheim �2002�. 39. S. Bedair...

  10. Economical Atomic Layer Deposition

    Science.gov (United States)

    Wyman, Richard; Davis, Robert; Linford, Matthew

    2010-10-01

    Atomic Layer Deposition is a self limiting deposition process that can produce films at a user specified height. At BYU we have designed a low cost and automated atomic layer deposition system. We have used the system to deposit silicon dioxide at room temperature using silicon tetrachloride and tetramethyl orthosilicate. Basics of atomic layer deposition, the system set up, automation techniques and our system's characterization are discussed.

  11. Atomic Layer Deposition of Pd Nanoparticles on TiO₂ Nanotubes for Ethanol Electrooxidation: Synthesis and Electrochemical Properties.

    Science.gov (United States)

    Assaud, Loïc; Brazeau, Nicolas; Barr, Maïssa K S; Hanbücken, Margrit; Ntais, Spyridon; Baranova, Elena A; Santinacci, Lionel

    2015-11-11

    Palladium nanoparticles are grown on TiO2 nanotubes by atomic layer deposition (ALD), and the resulting three-dimensional nanostructured catalysts are studied for ethanol electrooxidation in alkaline media. The morphology, the crystal structure, and the chemical composition of the Pd particles are fully characterized using scanning and transmission electron microscopies, X-ray diffraction, and X-ray photoelectron spectroscopy. The characterization revealed that the deposition proceeds onto the entire surface of the TiO2 nanotubes leading to the formation of well-defined and highly dispersed Pd nanoparticles. The electrooxidation of ethanol on Pd clusters deposited on TiO2 nanotubes shows not only a direct correlation between the catalytic activity and the particle size but also a steep increase of the response due to the enhancement of the metal-support interaction when the crystal structure of the TiO2 nanotubes is modified by annealing at 450 °C in air.

  12. Electroless atomic layer deposition

    Science.gov (United States)

    Robinson, David Bruce; Cappillino, Patrick J.; Sheridan, Leah B.; Stickney, John L.; Benson, David M.

    2017-10-31

    A method of electroless atomic layer deposition is described. The method electrolessly generates a layer of sacrificial material on a surface of a first material. The method adds doses of a solution of a second material to the substrate. The method performs a galvanic exchange reaction to oxidize away the layer of the sacrificial material and deposit a layer of the second material on the surface of the first material. The method can be repeated for a plurality of iterations in order to deposit a desired thickness of the second material on the surface of the first material.

  13. Atomic layer deposition of highly dispersed Pt nanoparticles on a high surface area electrode backbone for electrochemical promotion of catalysis

    NARCIS (Netherlands)

    Hajar, Y.; di Palma, V.; Kyriakou, V.; Verheijen, M. A.; Baranova, E. A.; Vernoux, P.; Kessels, W. M. M.; Creatore, M.; van de Sanden, M. C. M.; Tsampas, M. N.

    2017-01-01

    A novel catalyst design for electrochemical promotion of catalysis (EPOC) is proposed which overcomes the main bottlenecks that limit EPOC commercialization, i.e., the low dispersion and small surface area of metal catalysts. We have increased the surface area by using a porous composite electrode

  14. Nanoscale semiconductor Pb{sub 1-x}Sn{sub x}Se (x = 0.2) thin films synthesized by electrochemical atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lin Shaoxiong; Zhang Xin; Shi Xuezhao; Wei Jinping; Lu Daban; Zhang Yuzhen; Kou Huanhuan [Department of Chemistry, Lanzhou University, Lanzhou 730000 (China); Wang Chunming, E-mail: wangcm@lzu.edu.cn [Department of Chemistry, Lanzhou University, Lanzhou 730000 (China)

    2011-04-15

    In this paper the fabrication and characterization of IV-VI semiconductor Pb{sub 1-x}Sn{sub x}Se (x = 0.2) thin films on gold substrate by electrochemical atomic layer deposition (EC-ALD) method at room temperature are reported. Cyclic voltammetry (CV) is used to determine approximate deposition potentials for each element. The amperometric I-t technique is used to fabricate the semiconductor alloy. The elements are deposited in the following sequence: (Se/Pb/Se/Pb/Se/Pb/Se/Pb/Se/Sn ...), each period is formed using four ALD cycles of PbSe followed by one cycle of SnSe. Then the deposition manner above is cyclic repeated till a satisfactory film with expected thickness of Pb{sub 1-x}Sn{sub x}Se is obtained. The morphology of the deposit is observed by field emission scanning electron microscopy (FE-SEM). X-ray diffraction (XRD) pattern is used to study its crystalline structure; X-ray photoelectron spectroscopy (XPS) of the deposit indicates an approximate ratio 1.0:0.8:0.2 of Se, Pb and Sn, as the expected stoichiometry for the deposit. Open-circuit potential (OCP) studies indicate a good p-type property, and the good optical activity makes it suitable for fabricating a photoelectric switch.

  15. Lifetime assessment of atomic-layer-deposited Al2O3-Parylene C bilayer coating for neural interfaces using accelerated age testing and electrochemical characterization.

    Science.gov (United States)

    Minnikanti, Saugandhika; Diao, Guoqing; Pancrazio, Joseph J; Xie, Xianzong; Rieth, Loren; Solzbacher, Florian; Peixoto, Nathalia

    2014-02-01

    The lifetime and stability of insulation are critical features for the reliable operation of an implantable neural interface device. A critical factor for an implanted insulation's performance is its barrier properties that limit access of biological fluids to the underlying device or metal electrode. Parylene C is a material that has been used in FDA-approved implantable devices. Considered a biocompatible polymer with barrier properties, it has been used as a substrate, insulation or an encapsulation for neural implant technology. Recently, it has been suggested that a bilayer coating of Parylene C on top of atomic-layer-deposited Al2O3 would provide enhanced barrier properties. Here we report a comprehensive study to examine the mean time to failure of Parylene C and Al2O3-Parylene C coated devices using accelerated lifetime testing. Samples were tested at 60°C for up to 3 months while performing electrochemical measurements to characterize the integrity of the insulation. The mean time to failure for Al2O3-Parylene C was 4.6 times longer than Parylene C coated samples. In addition, based on modeling of the data using electrical circuit equivalents, we show here that there are two main modes of failure. Our results suggest that failure of the insulating layer is due to pore formation or blistering as well as thinning of the coating over time. The enhanced barrier properties of the bilayer Al2O3-Parylene C over Parylene C makes it a promising candidate as an encapsulating neural interface. Copyright © 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

  16. Atomic layer deposition for semiconductors

    CERN Document Server

    Hwang, Cheol Seong

    2014-01-01

    This edited volume discusses atomic layer deposition (ALD) for all modern semiconductor devices, moving from the basic chemistry of ALD and modeling of ALD processes to sections on ALD for memories, logic devices, and machines.

  17. A low-temperature synthesis of electrochemical active Pt nanoparticles and thin films by atomic layer deposition on Si(111) and glassy carbon surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Rui [Joint Center for Artificial Photosynthesis, California Institute of Technology, Pasadena, CA 91125 (United States); Han, Lihao [Joint Center for Artificial Photosynthesis, California Institute of Technology, Pasadena, CA 91125 (United States); Photovoltaic Materials and Devices (PVMD) Laboratory, Delft University of Technology, P.O. Box 5031, GA Delft 2600 (Netherlands); Huang, Zhuangqun; Ferrer, Ivonne M. [Joint Center for Artificial Photosynthesis, California Institute of Technology, Pasadena, CA 91125 (United States); Division of Chemistry and Chemical Engineering, California Institute of Technology, 210 Noyes Laboratory 127-72, Pasadena, CA 91125 (United States); Smets, Arno H.M.; Zeman, Miro [Photovoltaic Materials and Devices (PVMD) Laboratory, Delft University of Technology, P.O. Box 5031, GA Delft 2600 (Netherlands); Brunschwig, Bruce S., E-mail: bsb@caltech.edu [Beckman Institute, California Institute of Technology, Pasadena, CA 91125 (United States); Lewis, Nathan S., E-mail: nslewis@caltech.edu [Joint Center for Artificial Photosynthesis, California Institute of Technology, Pasadena, CA 91125 (United States); Beckman Institute, California Institute of Technology, Pasadena, CA 91125 (United States); Division of Chemistry and Chemical Engineering, California Institute of Technology, 210 Noyes Laboratory 127-72, Pasadena, CA 91125 (United States); Kavli Nanoscience Institute, California Institute of Technology, Pasadena, CA 91125 (United States)

    2015-07-01

    Atomic layer deposition (ALD) was used to deposit nanoparticles and thin films of Pt onto etched p-type Si(111) wafers and glassy carbon discs. Using precursors of MeCpPtMe{sub 3} and ozone and a temperature window of 200–300 °C, the growth rate was 80–110 pm/cycle. X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and scanning electron microscopy (SEM) were used to analyze the composition, structure, morphology, and thickness of the ALD-grown Pt nanoparticle films. The catalytic activity of the ALD-grown Pt for the hydrogen evolution reaction was shown to be equivalent to that of e-beam evaporated Pt on glassy carbon electrode. - Highlights: • Pure Pt films were grown by atomic layer deposition (ALD) using MeCpPtMe3 and ozone. • ALD-grown Pt thin films had high growth rates of 110 pm/cycle. • ALD-grown Pt films were electrocatalytic for hydrogen evolution from water. • Electrocatalytic activity of the ALD Pt films was equivalent to e-beam deposited Pt. • No carbon species were detected in the ALD-grown Pt films.

  18. A low-temperature synthesis of electrochemical active Pt nanoparticles and thin films by atomic layer deposition on Si(111) and glassy carbon surfaces

    International Nuclear Information System (INIS)

    Liu, Rui; Han, Lihao; Huang, Zhuangqun; Ferrer, Ivonne M.; Smets, Arno H.M.; Zeman, Miro; Brunschwig, Bruce S.; Lewis, Nathan S.

    2015-01-01

    Atomic layer deposition (ALD) was used to deposit nanoparticles and thin films of Pt onto etched p-type Si(111) wafers and glassy carbon discs. Using precursors of MeCpPtMe 3 and ozone and a temperature window of 200–300 °C, the growth rate was 80–110 pm/cycle. X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and scanning electron microscopy (SEM) were used to analyze the composition, structure, morphology, and thickness of the ALD-grown Pt nanoparticle films. The catalytic activity of the ALD-grown Pt for the hydrogen evolution reaction was shown to be equivalent to that of e-beam evaporated Pt on glassy carbon electrode. - Highlights: • Pure Pt films were grown by atomic layer deposition (ALD) using MeCpPtMe3 and ozone. • ALD-grown Pt thin films had high growth rates of 110 pm/cycle. • ALD-grown Pt films were electrocatalytic for hydrogen evolution from water. • Electrocatalytic activity of the ALD Pt films was equivalent to e-beam deposited Pt. • No carbon species were detected in the ALD-grown Pt films

  19. Electrochemical Characterization of TiO 2 Blocking Layers for Dye-Sensitized Solar Cells

    KAUST Repository

    Kavan, Ladislav; Té treault, Nicolas; Moehl, Thomas; Grä tzel, Michael

    2014-01-01

    Thin compact layers of TiO2 are grown by thermal oxidation of Ti, by spray pyrolysis, by electrochemical deposition, and by atomic layer deposition. These layers are used in dye-sensitized solar cells to prevent recombination of electrons from

  20. Stability of nanocrystalline electrochemically deposited layers

    DEFF Research Database (Denmark)

    Pantleon, Karen; Somers, Marcel A. J.

    2009-01-01

    have different microstructure and properties compared to bulk materials and the thermodynamic non-equilibrium state of as-deposited layers frequently results in changes of the microstructure as a function of time and/or temperature. The evolving microstructure affects the functionality and reliability......The technological demand for manufacturing components with complex geometries of micrometer or sub-micrometer dimensions and ambitions for ongoing miniaturization have attracted particular attention to electrochemical deposition methods. Thin layers of electrochemically deposited metals and alloys...... of electrodeposited components, which can be beneficial, as for the electrical conductivity of copper interconnect lines, or detrimental, as for reduced strength of nickel in MEMS applications. The present work reports on in-situ studies of the microstructure stability of as-deposited nanocrystalline Cu-, Ag- and Ni...

  1. Determination of antimony by using a quartz atom trap and electrochemical hydride generation atomic absorption spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Menemenlioglu, Ipek; Korkmaz, Deniz [Department of Chemistry, Middle East Technical University, 06531 Ankara (Turkey); Ataman, O. Yavuz [Department of Chemistry, Middle East Technical University, 06531 Ankara (Turkey)], E-mail: ataman@metu.edu.tr

    2007-01-15

    The analytical performance of a miniature quartz trap coupled with electrochemical hydride generator for antimony determination is described. A portion of the inlet arm of the conventional quartz tube atomizer was used as an integrated trap medium for on-line preconcentration of electrochemically generated hydrides. This configuration minimizes transfer lines and connections. A thin-layer of electrochemical flow through cell was constructed. Lead and platinum foils were employed as cathode and anode materials, respectively. Experimental operation conditions for hydride generation as well as the collection and revolatilization conditions for the generated hydrides in the inlet arm of the quartz tube atomizer were optimized. Interferences of copper, nickel, iron, cobalt, arsenic, selenium, lead and tin were examined both with and without the trap. 3{sigma} limit of detection was estimated as 0.053 {mu}g l{sup -1} for a sample size of 6.0 ml collected in 120 s. The trap has provided 18 fold sensitivity improvement as compared to electrochemical hydride generation alone. The accuracy of the proposed technique was evaluated with two standard reference materials; Trace Metals in Drinking Water, Cat CRM-TMDW and Metals on Soil/Sediment 4, IRM-008.

  2. Finite Bias Calculations to Model Interface Dipoles in Electrochemical Cells at the Atomic Scale

    DEFF Research Database (Denmark)

    Hansen, Martin Hangaard; Jin, Chengjun; Thygesen, Kristian Sommer

    2016-01-01

    The structure of an electrochemical interface is not determined by any external electrostatic field, but rather by external chemical potentials. This paper demonstrates that the electric double layer should be understood fundamentally as an internal electric field set up by the atomic structure...

  3. Polyelectrolyte Layer-by-Layer Assembly on Organic Electrochemical Transistors

    KAUST Repository

    Pappa, Anna-Maria

    2017-03-06

    Oppositely charged polyelectrolyte multilayers (PEMs) were built up in a layer-by-layer (LbL) assembly on top of the conducting polymer channel of an organic electrochemical transistor (OECT), aiming to combine the advantages of well-established PEMs with a high performance electronic transducer. The multilayered film is a model system to investigate the impact of biofunctionalization on the operation of OECTs comprising a poly(3,4-ethylenedioxythiophene) polystyrenesulfonate (PEDOT:PSS) film as the electrically active layer. Understanding the mechanism of ion injection into the channel that is in direct contact with charged polymer films provides useful insights for novel biosensing applications such as nucleic acid sensing. Moreover, LbL is demonstrated to be a versatile electrode modification tool enabling tailored surface features in terms of thickness, softness, roughness, and charge. LbL assemblies built up on top of conducting polymers will aid the design of new bioelectronic platforms for drug delivery, tissue engineering, and medical diagnostics.

  4. Polyelectrolyte Layer-by-Layer Assembly on Organic Electrochemical Transistors

    KAUST Repository

    Pappa, Anna-Maria; Inal, Sahika; Roy, Kirsty; Zhang, Yi; Pitsalidis, Charalampos; Hama, Adel; Pas, Jolien; Malliaras, George G.; Owens, Roisin M.

    2017-01-01

    Oppositely charged polyelectrolyte multilayers (PEMs) were built up in a layer-by-layer (LbL) assembly on top of the conducting polymer channel of an organic electrochemical transistor (OECT), aiming to combine the advantages of well-established PEMs with a high performance electronic transducer. The multilayered film is a model system to investigate the impact of biofunctionalization on the operation of OECTs comprising a poly(3,4-ethylenedioxythiophene) polystyrenesulfonate (PEDOT:PSS) film as the electrically active layer. Understanding the mechanism of ion injection into the channel that is in direct contact with charged polymer films provides useful insights for novel biosensing applications such as nucleic acid sensing. Moreover, LbL is demonstrated to be a versatile electrode modification tool enabling tailored surface features in terms of thickness, softness, roughness, and charge. LbL assemblies built up on top of conducting polymers will aid the design of new bioelectronic platforms for drug delivery, tissue engineering, and medical diagnostics.

  5. Nanostructured layer-by-layer films containing phaeophytin-b: Electrochemical characterization for sensing purposes

    Energy Technology Data Exchange (ETDEWEB)

    Nunes Pauli, Gisele Elias [Departamento de Física, Universidade Federal de Santa Catarina, Florianópolis, SC 88040900 (Brazil); Araruna, Felipe B. [Núcleo de Pesquisa em Biodiversidade e Biotecnologia, BIOTEC, Campus Ministro Reis Velloso, CMRV, Universidade Federal do Piauí, UFPI, Parnaíba (Brazil); Eiras, Carla [Núcleo de Pesquisa em Biodiversidade e Biotecnologia, BIOTEC, Campus Ministro Reis Velloso, CMRV, Universidade Federal do Piauí, UFPI, Parnaíba (Brazil); Laboratório Interdisciplinar de Materiais Avançados, LIMAV, CCN, UFPI, Teresina, PI 64049-550 (Brazil); Leite, José Roberto S.A. [Núcleo de Pesquisa em Biodiversidade e Biotecnologia, BIOTEC, Campus Ministro Reis Velloso, CMRV, Universidade Federal do Piauí, UFPI, Parnaíba (Brazil); Chaves, Otemberg Souza; Filho, Severino Gonçalves Brito; Vanderlei de Souza, Maria de Fátima [Programa de Pós-Graduação em Produtos Naturais e Sintéticos Bioativos, Universidade Federal da Paraíba, 58051-970 João Pessoa, Paraíba (Brazil); Chavero, Lucas Natálio; Sartorelli, Maria Luisa [Departamento de Física, Universidade Federal de Santa Catarina, Florianópolis, SC 88040900 (Brazil); and others

    2015-02-01

    This paper reports the study and characterization of a new platform for practical applications, where the use of phaeophytin-b (phaeo-b), a compound derived from chlorophyll, was characterized and investigated for sensing purposes. Modified electrodes with nanostructured phaeo-b films were fabricated via the layer-by-layer (LbL) technique, where phaeo-b was assembled with cashew gum, a polysaccharide, or with poly(allylamine) hydrochloride (PAH). The multilayer formation was investigated with UV–Vis spectroscopy by monitoring the absorption band associated to phaeo-b at approximately 410 nm, where distinct molecular interactions between the materials were verified. The morphology of the films was analyzed by atomic force microscopy (AFM). The electrochemical properties through redox behavior of phaeo-b were studied with cyclic voltammetry. The produced films were applied as sensors for hydrogen peroxide (H{sub 2}O{sub 2}) detection. In terms of sensing, the cashew/phaeo-b film exhibited the most promising result, with a fast response and broad linear range upon the addition of H{sub 2}O{sub 2}. This approach provides a simple and inexpensive method for development of a nonenzymatic electrochemical sensor for H{sub 2}O{sub 2}. - Highlights: • Potential applications of phaeophytin-b • Low-cost method to produce sensitive nanostructured films • Electrochemical sensor based on phaeophytin-b and cashew gum.

  6. Nanostructured layer-by-layer films containing phaeophytin-b: Electrochemical characterization for sensing purposes

    International Nuclear Information System (INIS)

    Nunes Pauli, Gisele Elias; Araruna, Felipe B.; Eiras, Carla; Leite, José Roberto S.A.; Chaves, Otemberg Souza; Filho, Severino Gonçalves Brito; Vanderlei de Souza, Maria de Fátima; Chavero, Lucas Natálio; Sartorelli, Maria Luisa

    2015-01-01

    This paper reports the study and characterization of a new platform for practical applications, where the use of phaeophytin-b (phaeo-b), a compound derived from chlorophyll, was characterized and investigated for sensing purposes. Modified electrodes with nanostructured phaeo-b films were fabricated via the layer-by-layer (LbL) technique, where phaeo-b was assembled with cashew gum, a polysaccharide, or with poly(allylamine) hydrochloride (PAH). The multilayer formation was investigated with UV–Vis spectroscopy by monitoring the absorption band associated to phaeo-b at approximately 410 nm, where distinct molecular interactions between the materials were verified. The morphology of the films was analyzed by atomic force microscopy (AFM). The electrochemical properties through redox behavior of phaeo-b were studied with cyclic voltammetry. The produced films were applied as sensors for hydrogen peroxide (H 2 O 2 ) detection. In terms of sensing, the cashew/phaeo-b film exhibited the most promising result, with a fast response and broad linear range upon the addition of H 2 O 2 . This approach provides a simple and inexpensive method for development of a nonenzymatic electrochemical sensor for H 2 O 2 . - Highlights: • Potential applications of phaeophytin-b • Low-cost method to produce sensitive nanostructured films • Electrochemical sensor based on phaeophytin-b and cashew gum

  7. Electrochemical Characterization of TiO 2 Blocking Layers for Dye-Sensitized Solar Cells

    KAUST Repository

    Kavan, Ladislav

    2014-07-31

    Thin compact layers of TiO2 are grown by thermal oxidation of Ti, by spray pyrolysis, by electrochemical deposition, and by atomic layer deposition. These layers are used in dye-sensitized solar cells to prevent recombination of electrons from the substrate (FTO or Ti) with the hole-conducting medium at this interface. The quality of blocking is evaluated electrochemically by methylviologen, ferro/ferricyanide, and spiro-OMeTAD as the model redox probes. Two types of pinholes in the blocking layers are classified, and their effective area is quantified. Frequency-independent Mott-Schottky plots are fitted from electrochemical impedance spectroscopy. Certain films of the thicknesses of several nanometers allow distinguishing the depletion layer formation both in the TiO2 film and in the FTO substrate underneath the titania film. The excellent blocking function of thermally oxidized Ti, electrodeposited film (60 nm), and atomic-layer-deposited films (>6 nm) is documented by the relative pinhole area of less than 1%. However, the blocking behavior of electrodeposited and atomic-layer-deposited films is strongly reduced upon calcination at 500 °C. The blocking function of spray-pyrolyzed films is less good but also less sensitive to calcination. The thermally oxidized Ti is well blocking and insensitive to calcination. © 2014 American Chemical Society.

  8. Atomic layer deposition for graphene device integration

    NARCIS (Netherlands)

    Vervuurt, R.H.J.; Kessels, W.M.M.; Bol, A.A.

    2017-01-01

    Graphene is a two dimensional material with extraordinary properties, which make it an interesting material for many optical and electronic devices. The integration of graphene in these devices often requires the deposition of thin dielectric layers on top of graphene. Atomic layer deposition (ALD)

  9. Atomic layer deposition of nanostructured materials

    CERN Document Server

    Pinna, Nicola

    2012-01-01

    Atomic layer deposition, formerly called atomic layer epitaxy, was developed in the 1970s to meet the needs of producing high-quality, large-area fl at displays with perfect structure and process controllability. Nowadays, creating nanomaterials and producing nanostructures with structural perfection is an important goal for many applications in nanotechnology. As ALD is one of the important techniques which offers good control over the surface structures created, it is more and more in the focus of scientists. The book is structured in such a way to fi t both the need of the expert reader (du

  10. Electrochemical detection of acetaminophen on the functionalized MWCNTs modified electrode using layer-by-layer technique

    International Nuclear Information System (INIS)

    Manjunatha, Revanasiddappa; Nagaraju, Dodahalli Hanumantharayudu; Suresh, Gurukar Shivappa; Melo, Jose Savio; D'Souza, Stanislaus F.; Venkatesha, Thimmappa Venkatarangaiah

    2011-01-01

    A selective electrochemical method is fabricated via layer-by-layer (LBL) method using both positively and negatively charged multi walled carbon nanotubes (MWCNTs) on poly (diallyldimetheylammonium chloride) (PDDA)/poly styrene sulfonate (PSS) modified graphite electrode, for the determination of acetaminophen (ACT) in the presence of dopamine (DA) and high concentration of ascorbic acid (AA). The modified electrode was characterized by cyclic voltammetry (CV) electrochemical impedance spectroscopy (EIS), atomic force microscopy (AFM) and scanning electron microscopy (SEM). Experimental conditions such as pH, accumulation potential and time, effect of potential sweep rates and interferents were studied. In CV well defined peaks for AA, ACT and DA are obtained at 24, 186 and 374 mV, respectively. The separations of peaks were 210, 188 and 398 mV between AA and DA, DA and ACT and AA and ACT, respectively. The diffusion coefficient was calculated by chronocoulometric. Chronoamperometric studies showed the linear relationship between oxidation peak current and concentration of ACT in the range 25-400 μM (R = 0.9991). The detection limit was 5 x 10 -7 mol/L. The proposed method gave satisfactory results in the determination of ACT in pharmaceutical and human serum samples.

  11. Perovskite Thin Films via Atomic Layer Deposition

    KAUST Repository

    Sutherland, Brandon R.; Hoogland, Sjoerd; Adachi, Michael M.; Kanjanaboos, Pongsakorn; Wong, Chris T. O.; McDowell, Jeffrey J.; Xu, Jixian; Voznyy, Oleksandr; Ning, Zhijun; Houtepen, Arjan J.; Sargent, Edward H.

    2014-01-01

    © 2014 Wiley-VCH Verlag GmbH & Co. KGaA. (Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.

  12. Perovskite Thin Films via Atomic Layer Deposition

    KAUST Repository

    Sutherland, Brandon R.

    2014-10-30

    © 2014 Wiley-VCH Verlag GmbH & Co. KGaA. (Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.

  13. Single-Atom Catalysts of Precious Metals for Electrochemical Reactions.

    Science.gov (United States)

    Kim, Jiwhan; Kim, Hee-Eun; Lee, Hyunjoo

    2018-01-10

    Single-atom catalysts (SACs), in which metal atoms are dispersed on the support without forming nanoparticles, have been used for various heterogeneous reactions and most recently for electrochemical reactions. In this Minireview, recent examples of single-atom electrocatalysts used for the oxygen reduction reaction (ORR), hydrogen oxidation reaction (HOR), hydrogen evolution reaction (HER), formic acid oxidation reaction (FAOR), and methanol oxidation reaction (MOR) are introduced. Many density functional theory (DFT) simulations have predicted that SACs may be effective for CO 2 reduction to methane or methanol production while suppressing H 2 evolution, and those cases are introduced here as well. Single atoms, mainly Pt single atoms, have been deposited on TiN or TiC nanoparticles, defective graphene nanosheets, N-doped covalent triazine frameworks, graphitic carbon nitride, S-doped zeolite-templated carbon, and Sb-doped SnO 2 surfaces. Scanning transmission electron microscopy, extended X-ray absorption fine structure measurement, and in situ infrared spectroscopy have been used to detect the single-atom structure and confirm the absence of nanoparticles. SACs have shown high mass activity, minimizing the use of precious metal, and unique selectivity distinct from nanoparticle catalysts owing to the absence of ensemble sites. Additional features that SACs should possess for effective electrochemical applications were also suggested. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Nano-soldering to single atomic layer

    Science.gov (United States)

    Girit, Caglar O [Berkeley, CA; Zettl, Alexander K [Kensington, CA

    2011-10-11

    A simple technique to solder submicron sized, ohmic contacts to nanostructures has been disclosed. The technique has several advantages over standard electron beam lithography methods, which are complex, costly, and can contaminate samples. To demonstrate the soldering technique graphene, a single atomic layer of carbon, has been contacted, and low- and high-field electronic transport properties have been measured.

  15. pH in atomic scale simulations of electrochemical interfaces

    DEFF Research Database (Denmark)

    Rossmeisl, Jan; Chan, Karen; Ahmed, Rizwan

    2013-01-01

    Electrochemical reaction rates can strongly depend on pH, and there is increasing interest in electrocatalysis in alkaline solution. To date, no method has been devised to address pH in atomic scale simulations. We present a simple method to determine the atomic structure of the metal......|solution interface at a given pH and electrode potential. Using Pt(111)|water as an example, we show the effect of pH on the interfacial structure, and discuss its impact on reaction energies and barriers. This method paves the way for ab initio studies of pH effects on the structure and electrocatalytic activity...

  16. Atomic scale characterization of mismatched graphene layers

    International Nuclear Information System (INIS)

    Luican-Mayer, Adina; Li, Guohong; Andrei, Eva Y.

    2017-01-01

    Highlights: • Review of STM/STS of graphene with various degree of coupling. • Review of vertically twisted graphene with respect with each other. • Review of Landau levels in graphene layers weakly decoupled electronically. • Review of laterally twisted graphene forming grain boundaries. - Abstract: In the bourgeoning field of two dimensional layered materials and their atomically thin counterparts, it has been established that the electronic coupling between the layers of the material plays a key role in determining its properties [1,2]. We are just beginning to understand how each material is unique in that respect while working our way up to building new materials with functionalities enabled by interlayer interactions. In this review, we will focus on a system that despite its apparent simplicity possesses a wealth of intriguing physics: layers of graphene with various degree of coupling. The situations discussed here are graphene layers vertically twisted with respect with each other, weakly decoupled electronically and laterally twisted forming grain boundaries. We emphasize experiments that atomically resolve the electronic properties.

  17. Predicting synergy in atomic layer etching

    Energy Technology Data Exchange (ETDEWEB)

    Kanarik, Keren J. [Lam Research Corp., Fremont, CA (United States); Tan, Samantha [Lam Research Corp., Fremont, CA (United States); Yang, Wenbing [Lam Research Corp., Fremont, CA (United States); Kim, Taeseung [Lam Research Corp., Fremont, CA (United States); Lill, Thorsten [Lam Research Corp., Fremont, CA (United States); Kabansky, Alexander [Lam Research Corp., Fremont, CA (United States); Hudson, Eric A. [Lam Research Corp., Fremont, CA (United States); Ohba, Tomihito [Lam Research Corp., Fremont, CA (United States); Nojiri, Kazuo [Lam Research Corp., Fremont, CA (United States); Yu, Jengyi [Lam Research Corp., Fremont, CA (United States); Wise, Rich [Lam Research Corp., Fremont, CA (United States); Berry, Ivan L. [Lam Research Corp., Fremont, CA (United States); Pan, Yang [Lam Research Corp., Fremont, CA (United States); Marks, Jeffrey [Lam Research Corp., Fremont, CA (United States); Gottscho, Richard A. [Lam Research Corp., Fremont, CA (United States)

    2017-03-27

    Atomic layer etching (ALE) is a multistep process used today in manufacturing for removing ultrathin layers of material. In this article, the authors report on ALE of Si, Ge, C, W, GaN, and SiO2 using a directional (anisotropic) plasma-enhanced approach. The authors analyze these systems by defining an “ALE synergy” parameter which quantifies the degree to which a process approaches the ideal ALE regime. This parameter is inspired by the ion-neutral synergy concept introduced in the 1979 paper by Coburn and Winters. ALE synergy is related to the energetics of underlying surface interactions and is understood in terms of energy criteria for the energy barriers involved in the reactions. Synergistic behavior is observed for all of the systems studied, with each exhibiting behavior unique to the reactant–material combination. By systematically studying atomic layer etching of a group of materials, the authors show that ALE synergy scales with the surface binding energy of the bulk material. This insight explains why some materials are more or less amenable to the directional ALE approach. Furthermore, they conclude that ALE is both simpler to understand than conventional plasma etch processing and is applicable to metals, semiconductors, and dielectrics.

  18. Electrochemically assisted fast-atom-bombardment mass spectrometry

    International Nuclear Information System (INIS)

    Phillips, L.R.

    1988-01-01

    The hybridization of electrochemistry and fast atom bombardment (FAB) mass spectrometry (MS) creates a new hyphenated technique, referred to as electrochemically assisted FAB (EFAB) MS, which improves the applicability of FAB MS in selectivity and extends the range of compounds to include low polarity molecules, and also reduces mass spectral complications due to matrix-related artifacts. FAB MS has proven to be indispensable in analysis of samples that are otherwise too intractable for conventional MS, such as peptides, oligosaccharides, and oligonucleotides, due to low volatility and ready thermal degradation. There are limits on its applicability, however, in that it works best with samples that are already ionic, or predisposed to become so by simple proton transfer to or from the matrix. A wide range of chemical substances can be ionized/analyzed by electrochemical methods. Therefore, a possible approach towards improving applicability of FAB MS is through its hybridization with electrochemistry. Samples are activated by electrolysis, carried out directly in the sample matrix through use of a modified FAB sample probe which was constructed containing a small electrolytic cell on the tip. In operation, one electrode is held at normal sample-probe/ion-source voltage, while the other electrode can be continuously varied ±15 volts to create electrochemical potentials. Several chemical substances, known to be unresponsive to FAB MS, have been examined by EFAB MS. Resultant spectra generally show a dramatic increases in signal/chemical noise ratio of structurally significant ions when compared to normal FAB spectra

  19. The atomic force microscope as a mechano–electrochemical pen

    Directory of Open Access Journals (Sweden)

    Christian Obermair

    2011-10-01

    Full Text Available We demonstrate a method that allows the controlled writing of metallic patterns on the nanometer scale using the tip of an atomic force microscope (AFM as a “mechano–electrochemical pen”. In contrast to previous experiments, no voltage is applied between the AFM tip and the sample surface. Instead, a passivated sample surface is activated locally due to lateral forces between the AFM tip and the sample surface. In this way, the area of tip–sample interaction is narrowly limited by the mechanical contact between tip and sample, and well-defined metallic patterns can be written reproducibly. Nanoscale structures and lines of copper were deposited, and the line widths ranged between 5 nm and 80 nm, depending on the deposition parameters. A procedure for the sequential writing of metallic nanostructures is introduced, based on the understanding of the passivation process. The mechanism of this mechano–electrochemical writing technique is investigated, and the processes of site-selective surface depassivation, deposition, dissolution and repassivation of electrochemically deposited nanoscale metallic islands are studied in detail.

  20. Controlled amino-functionalization by electrochemical reduction of bromo and nitro azobenzene layers bound to Si(111) surfaces

    NARCIS (Netherlands)

    Ullien, D.; Thüne, P.C.; Jager, W.F.; Sudhölter, E.J.R.; De Smet, L.C.P.M.

    2014-01-01

    4-Nitrobenzenediazonium (4-NBD) and 4-bromobenzenediazonium (4-BBD) salts were grafted electrochemically onto H-terminated, p-doped silicon (Si) surfaces. Atomic force microscopy (AFM) and ellipsometry experiments clearly showed layer thicknesses of 2–7 nm, which indicate multilayer formation.

  1. Spatial atomic layer deposition: a route towards further industrialization of atomic layer deposition

    NARCIS (Netherlands)

    Poodt, P.; Cameron, D.C.; Dickey, E.; George, S.M.; Kuznetsov, Vladimir; Parsons, G.N.; Roozeboom, F.; Sundaram, G.; Vermeer, A.

    2012-01-01

    Spatial atomic layer deposition can be used as a high-throughput manufacturing technique in functional thin film deposition for applications such as flexible electronics. This; however, requires low-temperature processing and handling of flexible substrates. The authors investigate the process

  2. In situ electrochemical atomic force microscope study on graphite electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Hirasawa, K.A.; Sato, Tomohiro; Asahina, Hitoshi; Yamaguchi, Shoji; Mori, Shoichiro [Mitsubishi Chemical Corp., Inashiki, Ibaraki (Japan). Tsukuba Research Center

    1997-04-01

    Interest in the formation of the solid electrolyte interphase (SEI) film on graphite electrodes has increased recently in the quest to improve the performance of lithium-ion batteries. Topographic and frictional changes on the surface of a highly oriented pyrolytic graphite electrode in 1 M LiCiO{sub 4} ethylene carbonate/ethylmethyl carbonate (1:1) electrolyte were examined during charge and discharge by in situ electrochemical atomic force microscopy and friction force microscopy simultaneously in real-time. Solid electrolyte interphase film formation commenced at approximately 2 V vs. Li/Li{sup +} and stable film formation with an island-like morphology was observed below approximately 0.9 V vs. Li/Li{sup +}. Further experiments on a KS-44 graphite/polyvinylidene difluoride binder composite electrode showed similar phenomena.

  3. Atomic-layer deposition of silicon nitride

    CERN Document Server

    Yokoyama, S; Ooba, K

    1999-01-01

    Atomic-layer deposition (ALD) of silicon nitride has been investigated by means of plasma ALD in which a NH sub 3 plasma is used, catalytic ALD in which NH sub 3 is dissociated by thermal catalytic reaction on a W filament, and temperature-controlled ALD in which only a thermal reaction on the substrate is employed. The NH sub 3 and the silicon source gases (SiH sub 2 Cl sub 2 or SiCl sub 4) were alternately supplied. For all these methods, the film thickness per cycle was saturated at a certain value for a wide range of deposition conditions. In the catalytic ALD, the selective deposition of silicon nitride on hydrogen-terminated Si was achieved, but, it was limited to only a thin (2SiO (evaporative).

  4. Atomic-Scale Simulation of Electrochemical Processes at Electrode/Water Interfaces under Referenced Bias Potential.

    Science.gov (United States)

    Bouzid, Assil; Pasquarello, Alfredo

    2018-04-19

    Based on constant Fermi-level molecular dynamics and a proper alignment scheme, we perform simulations of the Pt(111)/water interface under variable bias potential referenced to the standard hydrogen electrode (SHE). Our scheme yields a potential of zero charge μ pzc of ∼0.22 eV relative to the SHE and a double layer capacitance C dl of ≃19 μF cm -2 , in excellent agreement with experimental measurements. In addition, we study the structural reorganization of the electrical double layer for bias potentials ranging from -0.92 eV to +0.44 eV and find that O down configurations, which are dominant at potentials above the pzc, reorient to favor H down configurations as the measured potential becomes negative. Our modeling scheme allows one to not only access atomic-scale processes at metal/water interfaces, but also to quantitatively estimate macroscopic electrochemical quantities.

  5. Textured strontium titanate layers on platinum by atomic layer deposition

    International Nuclear Information System (INIS)

    Blomberg, T.; Anttila, J.; Haukka, S.; Tuominen, M.; Lukosius, M.; Wenger, Ch.; Saukkonen, T.

    2012-01-01

    Formation of textured strontium titanate (STO) layers with large lateral grain size (0.2–1 μm) and low X-ray reflectivity roughness (∼ 1.36 nm) on Pt electrodes by industry proven atomic layer deposition (ALD) method is demonstrated. Sr(t-Bu 3 Cp) 2 , Ti(OMe) 4 and O 3 precursors at 250 °C were used to deposit Sr rich STO on Pt/Ti/SiO 2 /Si ∅200 mm substrates. After crystallization post deposition annealing at 600 °C in air, most of the STO grains showed a preferential orientation of the {001} plane parallel to the substrate surface, although other orientations were also present. Cross sectional and plan view transmission electron microscopy and electron diffraction analysis revealed more than an order of magnitude larger lateral grain sizes for the STO compared to the underlying multicrystalline {111} oriented platinum electrode. The combination of platinum bottom electrodes with ALD STO(O 3 ) shows a promising path towards the formation of single oriented STO film. - Highlights: ► Amorphous strontium titanate (STO) on platinum formed a textured film after annealing. ► Single crystal domains in 60 nm STO film were 0.2–1 μm wide. ► Most STO grains were {001} oriented.

  6. Tungsten atomic layer deposition on polymers

    Energy Technology Data Exchange (ETDEWEB)

    Wilson, C.A. [Department of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80309-0215 (United States); McCormick, J.A. [Department of Chemical and Biological Engineering, University of Colorado, Boulder, Colorado 80309-0424 (United States); Cavanagh, A.S. [Department of Physics, University of Colorado, Boulder, Colorado 80309-0390 (United States); Goldstein, D.N. [Department of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80309-0215 (United States); Weimer, A.W. [Department of Chemical and Biological Engineering, University of Colorado, Boulder, Colorado 80309-0424 (United States); George, S.M. [Department of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80309-0215 (United States); Department of Chemical and Biological Engineering, University of Colorado, Boulder, Colorado 80309-0424 (United States)], E-mail: Steven.George@Colorado.Edu

    2008-07-31

    Tungsten (W) atomic layer deposition (ALD) was investigated on a variety of polymer films and polymer particles. These polymers included polyethylene, polyvinyl chloride, polystyrene, polycarbonate, polypropylene and polymethylmethacrylate. The W ALD was performed at 80 {sup o}C using WF{sub 6} and Si{sub 2}H{sub 6} as the gas phase reactants. W ALD on flat polymer films can eventually nucleate and grow after more than 60 AB cycles. X-ray photoelectron spectroscopy studies of W ALD on polystyrene after 50 AB cycles suggested that tungsten nanoclusters are present in the W ALD nucleation regime. The W ALD nucleation is greatly facilitated by a few cycles of Al{sub 2}O{sub 3} ALD. W ALD films were grown at 80 {sup o}C on spin-coated polymers on silicon wafers after 10 AB cycles of Al{sub 2}O{sub 3} ALD. The W ALD film was observed to grow linearly with a growth rate of 3.9 A per AB cycle on the polymer films treated with the Al{sub 2}O{sub 3} ALD seed layer. The W ALD films displayed an excellent, mirror-like optical reflectivity. The resistivity was 100-400 {mu}{omega} cm for W ALD films with thicknesses from 95-845 A. W ALD was also observed on polymer particles after W ALD in a rotary reactor. Without the Al{sub 2}O{sub 3} ALD seed layer, the nucleation of W ALD directly on the polymer particles at 80 {sup o}C required > 50 AB cycles. In contrast, the polymer particles treated with only 5 AB cycles of Al{sub 2}O{sub 3} ALD were observed to blacken after 25 AB cycles of W ALD. W ALD on polymers may have applications for flexible optical mirrors, electromagnetic interference shielding and gas diffusion barriers.

  7. (Invited) Atomic Layer Deposition for Novel Dye-Sensitized Solar Cells

    KAUST Repository

    Tétreault, Nicolas

    2011-01-01

    Herein we present the latest fabrication and characterization techniques for atomic layer deposition of Al 2O 3, ZnO, SnO 2, Nb 2O 5, HfO 2, Ga 2O 3 and TiO 2 for research on dye-sensitized solar cell. In particular, we review the fabrication of state-of-the-art 3D host-passivation-guest photoanodes and ZnO nanowires as well as characterize the deposited thin films using spectroscopic ellipsometry, X-ray diffraction, Hall effect, J-V curves and electrochemical impedance spectroscopy. ©The Electrochemical Society.

  8. Atomic Layer Deposition of Stable LiAlF4 Lithium Ion Conductive Interfacial Layer for Stable Cathode Cycling.

    Science.gov (United States)

    Xie, Jin; Sendek, Austin D; Cubuk, Ekin D; Zhang, Xiaokun; Lu, Zhiyi; Gong, Yongji; Wu, Tong; Shi, Feifei; Liu, Wei; Reed, Evan J; Cui, Yi

    2017-07-25

    Modern lithium ion batteries are often desired to operate at a wide electrochemical window to maximize energy densities. While pushing the limit of cutoff potentials allows batteries to provide greater energy densities with enhanced specific capacities and higher voltage outputs, it raises key challenges with thermodynamic and kinetic stability in the battery. This is especially true for layered lithium transition-metal oxides, where capacities can improve but stabilities are compromised as wider electrochemical windows are applied. To overcome the above-mentioned challenges, we used atomic layer deposition to develop a LiAlF 4 solid thin film with robust stability and satisfactory ion conductivity, which is superior to commonly used LiF and AlF 3 . With a predicted stable electrochemical window of approximately 2.0 ± 0.9 to 5.7 ± 0.7 V vs Li + /Li for LiAlF 4 , excellent stability was achieved for high Ni content LiNi 0.8 Mn 0.1 Co 0.1 O 2 electrodes with LiAlF 4 interfacial layer at a wide electrochemical window of 2.75-4.50 V vs Li + /Li.

  9. Visualization of deuterium dead layer by atom probe tomography

    KAUST Repository

    Gemma, Ryota

    2012-12-01

    The first direct observation, by atom probe tomography, of a deuterium dead layer is reported for Fe/V multilayered film loaded with D solute atoms. The thickness of the dead layers was measured to be 0.4-0.5 nm. The dead layers could be distinguished from chemically intermixed layers. The results suggest that the dead layer effect occurs even near the interface of the mixing layers, supporting an interpretation that the dead layer effect cannot be explained solely by electronic charge transfer but also involves a modulation of rigidity. © 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

  10. Visualization of deuterium dead layer by atom probe tomography

    KAUST Repository

    Gemma, Ryota; Al-Kassab, Talaat; Kirchheim, Reiner; Pundt, Astrid A.

    2012-01-01

    The first direct observation, by atom probe tomography, of a deuterium dead layer is reported for Fe/V multilayered film loaded with D solute atoms. The thickness of the dead layers was measured to be 0.4-0.5 nm. The dead layers could be distinguished from chemically intermixed layers. The results suggest that the dead layer effect occurs even near the interface of the mixing layers, supporting an interpretation that the dead layer effect cannot be explained solely by electronic charge transfer but also involves a modulation of rigidity. © 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

  11. Textured strontium titanate layers on platinum by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Blomberg, T., E-mail: tom.blomberg@asm.com [ASM Microchemistry Ltd., Vaeinoe Auerin katu 12 A, 00560 Helsinki (Finland); Anttila, J.; Haukka, S.; Tuominen, M. [ASM Microchemistry Ltd., Vaeinoe Auerin katu 12 A, 00560 Helsinki (Finland); Lukosius, M.; Wenger, Ch. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Saukkonen, T. [Aalto University, Puumiehenkuja 3, 02150 Espoo (Finland)

    2012-08-31

    Formation of textured strontium titanate (STO) layers with large lateral grain size (0.2-1 {mu}m) and low X-ray reflectivity roughness ({approx} 1.36 nm) on Pt electrodes by industry proven atomic layer deposition (ALD) method is demonstrated. Sr(t-Bu{sub 3}Cp){sub 2}, Ti(OMe){sub 4} and O{sub 3} precursors at 250 Degree-Sign C were used to deposit Sr rich STO on Pt/Ti/SiO{sub 2}/Si Empty-Set 200 mm substrates. After crystallization post deposition annealing at 600 Degree-Sign C in air, most of the STO grains showed a preferential orientation of the {l_brace}001{r_brace} plane parallel to the substrate surface, although other orientations were also present. Cross sectional and plan view transmission electron microscopy and electron diffraction analysis revealed more than an order of magnitude larger lateral grain sizes for the STO compared to the underlying multicrystalline {l_brace}111{r_brace} oriented platinum electrode. The combination of platinum bottom electrodes with ALD STO(O{sub 3}) shows a promising path towards the formation of single oriented STO film. - Highlights: Black-Right-Pointing-Pointer Amorphous strontium titanate (STO) on platinum formed a textured film after annealing. Black-Right-Pointing-Pointer Single crystal domains in 60 nm STO film were 0.2-1 {mu}m wide. Black-Right-Pointing-Pointer Most STO grains were {l_brace}001{r_brace} oriented.

  12. Electrochemical Evaluation of Corrosion Inhibiting Layers Formed in a Defect from Lithium-Leaching Organic Coatings

    NARCIS (Netherlands)

    Visser, P.; Meeusen, M.; Gonzalez Garcia, Y.; Terryn, H.A.; Mol, J.M.C.

    2017-01-01

    This work presents the electrochemical evaluation of protective layers generated in a coating defect from lithium-leaching organic coatings on AA2024-T3 aluminum alloys as a function of neutral salt spray exposure time. Electrochemical impedance spectroscopy was used to study the electrochemical

  13. Effects of N2 mixed gas atomization on electrochemical properties of Mm(Ni,Co,Mn,Al)5.0 alloy powder

    International Nuclear Information System (INIS)

    Yanagimoto, K.; Sunada, S.; Majima, K.; Sawada, T.

    2004-01-01

    N 2 gas, N 2 -Ar mixed gas and Ar gas atomization followed by acid surface treatment was applied to improve electrochemical properties of AB 5 type hydrogen storage alloy powder. The shape of Ar atomized powder was spherical and it changed to be irregular with increasing N 2 content of mixed gas. Irrespective of gas kinds, electrodes of atomized powder showed the same discharge capacity as cast-pulverized powder under auxiliary electrical conductivity by nickel powder addition. Without nickel powder, however, N 2 atomized powder showed the best electrochemical properties as well as gas activation behavior. By the combination process of N 2 gas atomization and acid surface treatment, it was considered that irregular shape of N 2 atomized powder promoted electrical conductivity of electrodes and catalytic nickel concentrated surface layer was formed to increase the hydrogen storage rapidity

  14. A review on electrochemical double-layer capacitors

    International Nuclear Information System (INIS)

    Sharma, Pawan; Bhatti, T.S.

    2010-01-01

    Various energy storage technologies have been developed in the market for various applications. Batteries flywheels, fuel cells are a few which are much common, those are being used in several countries and also research is also carrying on these technologies to make much better them. The electrochemical double-layer capacitor (EDLC) is an emerging technology, which really plays a key part in fulfilling the demands of electronic devices and systems, for present and future. This paper presents the historical background, classification, construction, modeling, testing, and voltage balancing of the EDLC technology. The applications of EDLC in electrical vehicles, power quality, and others are also discussed and their advantages over other storages technologies are also discussed.

  15. In Situ Investigation of Electrochemically Mediated Surface-Initiated Atom Transfer Radical Polymerization by Electrochemical Surface Plasmon Resonance.

    Science.gov (United States)

    Chen, Daqun; Hu, Weihua

    2017-04-18

    Electrochemically mediated atom transfer radical polymerization (eATRP) initiates/controls the controlled/living ATRP chain propagation process by electrochemically generating (regenerating) the activator (lower-oxidation-state metal complex) from deactivator (higher-oxidation-state metal complex). Despite successful demonstrations in both of the homogeneous polymerization and heterogeneous systems (namely, surface-initiated ATRP, SI-ATRP), the eATRP process itself has never been in situ investigated, and important information regarding this process remains unrevealed. In this work, we report the first investigation of the electrochemically mediated SI-ATRP (eSI-ATRP) by rationally combining the electrochemical technique with real-time surface plasmon resonance (SPR). In the experiment, the potential of a SPR gold chip modified by the self-assembled monolayer of the ATRP initiator was controlled to electrochemically reduce the deactivator to activator to initiate the SI-ATRP, and the whole process was simultaneously monitored by SPR with a high time resolution of 0.1 s. It is found that it is feasible to electrochemically trigger/control the SI-ATRP and the polymerization rate is correlated to the potential applied to the gold chip. This work reveals important kinetic information for eSI-ATRP and offers a powerful platform for in situ investigation of such complicated processes.

  16. Simulation of atomic layer deposition on nanoparticle agglomerates

    NARCIS (Netherlands)

    Jin, W.; van Ommen, J.R.; Kleijn, C.R.

    2016-01-01

    Coated nanoparticles have many potential applications; production of large quantities is feasible by atomic layer deposition (ALD) on nanoparticles in a fluidized bed reactor. However, due to the cohesive interparticle forces, nanoparticles form large agglomerates, which influences the coating

  17. Atomic layer deposition: prospects for solar cell manufacturing

    NARCIS (Netherlands)

    Kessels, W.M.M.; Hoex, B.; Sanden, van de M.C.M.

    2008-01-01

    Atomic layer deposition (ALD) is a thin film growth technology that is capable of depositing uniform and conformal films on complex, three-dimensional objects with atomic precision. ALD is a rapidly growing field and it is currently at the verge of being introduced in the semiconductor industry.

  18. Electrochemical performance of Sn-Sb-Cu film anodes prepared by layer-by-layer electrodeposition

    International Nuclear Information System (INIS)

    Jiang Qianlei; Xue Ruisheng; Jia Mengqiu

    2012-01-01

    A novel layer-by-layer electrodeposition and heat-treatment approach was attempted to obtain Sn-Sb-Cu film anode for lithium ion batteries. The preparation of Sn-Sb-Cu anodes started with galvanostatic electrochemically depositing antimony and tin sequentially on the substrate of copper foil collector. Sn-Sb and Cu-Sb alloys were formed when heated. The SEM analysis showed that the crystalline grains become bigger and the surface of the Sn-Sb-Cu anode becomes more denser after annealing. The energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD) analysis showed the antimony, tin and copper were alloyed to form SnSb and Cu 2 Sb after heat treatment. The X-ray photoelectron spectroscopy (XPS) analysis showed the surface of the Sn-Sb-Cu electrode was covered by a thin oxide layer. Electrochemical measurements showed that the annealed Sn-Sb-Cu anode has high reversible capacity and good capacity retention. It exhibited a reversible capacity of about 962 mAh/g in the initial cycle, which still remained 715 mAh/g after 30 cycles.

  19. Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing.

    Science.gov (United States)

    Shih, Huan-Yu; Lee, Wei-Hao; Kao, Wei-Chung; Chuang, Yung-Chuan; Lin, Ray-Ming; Lin, Hsin-Chih; Shiojiri, Makoto; Chen, Miin-Jang

    2017-01-03

    Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amorphous phase to a single-crystalline epitaxial layer, at a low deposition temperature of 300 °C. The energy transferred from plasma not only provides the crystallization energy but also enhances the migration of adatoms and the removal of ligands, which significantly improve the crystallinity of the epitaxial layer. The X-ray diffraction reveals that the full width at half-maximum of the AlN (0002) rocking curve is only 144 arcsec in the AlN ultrathin epilayer with a thickness of only a few tens of nm. The high-resolution transmission electron microscopy also indicates the high-quality single-crystal hexagonal phase of the AlN epitaxial layer on the sapphire substrate. The result opens a window for further extension of the ALD applications from amorphous thin films to the high-quality low-temperature atomic layer epitaxy, which can be exploited in a variety of fields and applications in the near future.

  20. Electrochemically Produced Graphene for Microporous Layers in Fuel Cells.

    Science.gov (United States)

    Najafabadi, Amin Taheri; Leeuwner, Magrieta J; Wilkinson, David P; Gyenge, Előd L

    2016-07-07

    The microporous layer (MPL) is a key cathodic component in proton exchange membrane fuel cells owing to its beneficial influence on two-phase mass transfer. However, its performance is highly dependent on material properties such as morphology, porous structure, and electrical resistance. To improve water management and performance, electrochemically exfoliated graphene (EGN) microsheets are considered as an alternative to the conventional carbon black (CB) MPLs. The EGN-based MPLs decrease the kinetic overpotential and the Ohmic potential loss, whereas the addition of CB to form a composite EGN+CB MPL improves the mass-transport limiting current density drastically. This is reflected by increases of approximately 30 and 70 % in peak power densities at 100 % relative humidity (RH) compared with those for CB- and EGN-only MPLs, respectively. The composite EGN+CB MPL also retains the superior performance at a cathode RH of 20 %, whereas the CB MPL shows significant performance loss. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Compositional characterization of atomic layer deposited alumina

    Energy Technology Data Exchange (ETDEWEB)

    Philip, Anu; Thomas, Subin; Kumar, K. Rajeev [Department of Instrumentation, Cochin University of Science and Technology, Cochin-22, Kerala (India)

    2014-01-28

    As the microelectronic industry demands feature size in the order of few and sub nanometer regime, the film composition and other film properties become critical issues and ALD has emerged as the choice of industry. Aluminum oxide is a material with wide applications in electronic and optoelectronic devices and protective and ion barrier layers. Al{sub 2}O{sub 3} is an excellent dielectric because of its large band gap (8.7eV), large band offsets with silicon. We have deposited thin layers of alumina on silicon wafer (p-type) for gate dielectric applications by ALD technique and compositional characterizations of the deposited thin films were done using EDS, XPS and FTIR spectra.

  2. Compositional characterization of atomic layer deposited alumina

    International Nuclear Information System (INIS)

    Philip, Anu; Thomas, Subin; Kumar, K. Rajeev

    2014-01-01

    As the microelectronic industry demands feature size in the order of few and sub nanometer regime, the film composition and other film properties become critical issues and ALD has emerged as the choice of industry. Aluminum oxide is a material with wide applications in electronic and optoelectronic devices and protective and ion barrier layers. Al 2 O 3 is an excellent dielectric because of its large band gap (8.7eV), large band offsets with silicon. We have deposited thin layers of alumina on silicon wafer (p-type) for gate dielectric applications by ALD technique and compositional characterizations of the deposited thin films were done using EDS, XPS and FTIR spectra

  3. Electrochemical double-layer capacitors based on functionalized graphene

    Science.gov (United States)

    Pope, Michael Allan

    Graphene is a promising electrode material for electrochemical double-layer capacitors (EDLCs) used for energy storage due to its high electrical conductivity and theoretical specific surface area. However, the intrinsic capacitance of graphene is known to be low and governed by the electronic side of the interface. Furthermore, graphene tends to aggregate and stack together when processed into thick electrode films. This significantly lowers the ion-accessible specific surface area (SSA). Maximizing both the SSA and the intrinsic capacitance are the main problems addressed in this thesis in an effort to improve the specific capacitance and energy density of EDLCs. In contrast to pristine graphene, functionalized graphene produced by the thermal exfoliation of graphite oxide contains residual functional groups and lattice defects. To study how these properties affect the double-layer capacitance, a model electrode system capable of measuring the intrinsic electrochemical properties of functionalized graphene was developed. To prevent artifacts and uncertainties related to measurements on porous electrodes, the functionalized graphene sheets (FGSs) were assembled as densely tiled monolayers using a Langmuir-Blodgett technique. In this way, charging can be studied in a well-defined 2D geometry. The possibility of measuring and isolating the intrinsic electrochemical properties of FGS monolayers was first demonstrated by comparing capacitance and redox probe measurements carried out on coatings deposited on passivated gold and single crystal graphite substrates. This monolayer system was then used to follow the double-layer capacitance of the FGS/electrolyte interface as the structure and chemistry of graphene was varied by thermal treatments ranging from 300 °C to 2100 °C. Elemental analysis and Raman spectroscopy were used to determine the resulting chemical and structural transformation upon heat treatment. It was demonstrated that intrinsically defective

  4. Electrochemical generation of mercury cold vapor and its in-situ trapping in gold-covered graphite tube atomizers

    International Nuclear Information System (INIS)

    Cerveny, Vaclav; Rychlovsky, Petr; Netolicka, Jarmila; Sima, Jan

    2007-01-01

    The combination of more efficient flow-through electrochemical mercury cold vapor generation with its in-situ trapping in a graphite tube atomizer is described. This coupled technique has been optimized to attain the maximum sensitivity for Hg determination and to minimize the limits of detection and determination. A laboratory constructed thin-layer flow-through cell with a platinum cathode served as the cold vapor generator. Various cathode arrangements with different active surface areas were tested. Automated sampling equipment for the graphite atomizer with an untreated fused silica capillary was used for the introduction of the mercury vapor. The inner surface of the graphite tube was covered with a gold foil placed against the sampling hole. The results attained for the electrochemical mercury cold vapor generation (an absolute limit of detection of 80 pg; peak absorbance, 3σ criterion) were compared with the traditional vapor generation using NaBH 4 as the reducing agent (an absolute limit of detection of 124 pg; peak absorbance, 3σ criterion). The repeatability at the 5 ng ml -1 level was better than 4.1% (RSD) for electrochemical mercury vapor generation and better than 5.6% for the chemical cold vapor generation. The proposed method was applied to the determination the of Hg contents in a certified reference material and in spiked river water samples

  5. Layer-by-Layer films based on biopolymers extracted from red seaweeds and polyaniline for applications in electrochemical sensors of chromium VI

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira Farias, Emanuel Airton de; Corrêa dos Santos, Marianne; Araujo Dionísio, Natália de; Quelemes, Patrick V.; Souza Almeida Leite, José Roberto de [Núcleo de Pesquisa em Biodiversidade e Biotecnologia, BIOTEC, CMRV, UFPI, Parnaíba, PI 64202-020 (Brazil); Eaton, Peter [UCIBIO, REQUIMTE, Departamento de Química e Bioquímica, Faculdade de Ciências, Universidade do Porto, 4169-007 Porto (Portugal); Alves da Silva, Durcilene [Núcleo de Pesquisa em Biodiversidade e Biotecnologia, BIOTEC, CMRV, UFPI, Parnaíba, PI 64202-020 (Brazil); Eiras, Carla, E-mail: eiras@cnpq.br [Núcleo de Pesquisa em Biodiversidade e Biotecnologia, BIOTEC, CMRV, UFPI, Parnaíba, PI 64202-020 (Brazil); Laboratório Interdisciplinar de Materiais Avançados, LIMAV, CCN, UFPI, Teresina, PI 64049-550 (Brazil)

    2015-10-15

    Graphical abstract: - Highlights: • LbL films based on PANI and polysaccharides of seaweeds were produced and applied sensors of Cr (VI). - Abstract: This paper proposes a new application for natural polysaccharides (agar and carrageenan), both extracted from the cell wall of red seaweeds. Thin films were prepared by the Layer-by-Layer (LbL) self-assembly technique onto ITO (tin-doped indium oxide), where the polysaccharides of interest were deposited in layers alternating with polyaniline (PANI). The films developed were characterized by cyclic voltammetry (CV), ultraviolet–visible spectroscopy (UV–vis) and atomic force microscopy (AFM). Results showed the presence of agar as well as carrageenan, which improves the electrochemical stability of the conducting polymer in an acid medium. The interactions at the molecular level between PANI and the biopolymers affected the most appropriate sequence of deposition as employed in the process of material immobilization and also influenced the resulting morphology. Among the films studied, the most promising system as regards electrochemical measurements was the ITO/agar/PANI system, which was subsequently employed in the electrochemical detection of chromium (VI)

  6. Layer-by-Layer films based on biopolymers extracted from red seaweeds and polyaniline for applications in electrochemical sensors of chromium VI

    International Nuclear Information System (INIS)

    Oliveira Farias, Emanuel Airton de; Corrêa dos Santos, Marianne; Araujo Dionísio, Natália de; Quelemes, Patrick V.; Souza Almeida Leite, José Roberto de; Eaton, Peter; Alves da Silva, Durcilene; Eiras, Carla

    2015-01-01

    Graphical abstract: - Highlights: • LbL films based on PANI and polysaccharides of seaweeds were produced and applied sensors of Cr (VI). - Abstract: This paper proposes a new application for natural polysaccharides (agar and carrageenan), both extracted from the cell wall of red seaweeds. Thin films were prepared by the Layer-by-Layer (LbL) self-assembly technique onto ITO (tin-doped indium oxide), where the polysaccharides of interest were deposited in layers alternating with polyaniline (PANI). The films developed were characterized by cyclic voltammetry (CV), ultraviolet–visible spectroscopy (UV–vis) and atomic force microscopy (AFM). Results showed the presence of agar as well as carrageenan, which improves the electrochemical stability of the conducting polymer in an acid medium. The interactions at the molecular level between PANI and the biopolymers affected the most appropriate sequence of deposition as employed in the process of material immobilization and also influenced the resulting morphology. Among the films studied, the most promising system as regards electrochemical measurements was the ITO/agar/PANI system, which was subsequently employed in the electrochemical detection of chromium (VI)

  7. Crystalline thin films: The electrochemical atomic layer deposition (ECALD) view

    CSIR Research Space (South Africa)

    Modibedi, M

    2011-09-01

    Full Text Available on various substrates: work done @ EaP - Compound semiconductor ? Conclusions ? CSIR 2011 www.csir.co.za Acknowledgements ? Dr. Tumaini Mkwizu, PhD work on ECALD ? Ms. Nikiwe Kunjuzwa, PhD student- ECALD and batteries ? Prof... Reservoirs Potentiostat Reference Electrode Substrate (Working Electrode) Gasket Counter Electrode Electrodeposition flow-cell Waste/ Recycling Pump Pump Pump Pump Pump Potentiostat Peristaltic Pumps Flow-cell Instrumental set-up ? Pumping...

  8. Electrochemical fabrication of Sn nanowires on titania nanotube guide layers

    International Nuclear Information System (INIS)

    Djenizian, Thierry; Hanzu, Ilie; Premchand, Yesudas D; Vacandio, Florence; Knauth, Philippe

    2008-01-01

    We describe a novel approach for the fabrication of tailored nanowires using a two-step electrochemical process. It is demonstrated that self-organized TiO 2 nanotubes can be used to activate and guide the electrochemical growth of Sn crystallites, leading to the formation of vertical features with a high aspect ratio. We show that the dimensions and the density of Sn crystallites depend on the electrodeposition parameters

  9. New development on electrochemical etching processes at the Atomic Energy Organization of Iran

    CERN Document Server

    Sohrabi, M

    1999-01-01

    Some highlights of new developments made in our laboratory at the Atomic Energy Organization of Iran on chemical and electrochemical etching (ECE) of polymer track detectors like polycarbonate (PC) are presented. They include introduction of new ECE chamber systems and methods for production of ECE signs and symbols, and a new versatile ECE chamber (VECE) system for multi-purpose, multi-size, and/or multi-shape detector processing; determination of photoneutron doses in and around high-energy X-ray beams of a 20 MV medical accelerator; verification of the Smythe and Mason equations for ECE of tracks in polymers; ECE of alpha and recoil tracks in PC using PMW, PEW and PEMW etchants; introduction of a novel method using ethylene diamine for treatment of PC detectors with its applications, for example in precision removal of surface layers of PC (e.g. bulk removal rates of about 0.04, 0.15, 0.36, 0.66, and 1.33 mm min sup - sup 1 for 60%, 65%, 70%, 75% and 80% ethylene diamine solution (v/v) in water respectivel...

  10. Interaction of GaN epitaxial layers with atomic hydrogen

    Energy Technology Data Exchange (ETDEWEB)

    Losurdo, M.; Giangregorio, M.M.; Capezzuto, P.; Bruno, G.; Namkoong, G.; Doolittle, W.A.; Brown, A.S

    2004-08-15

    GaN surface passivation processes are still under development and among others hydrogen treatments are investigated. In this study, we use non-destructive optical and electrical probes such as spectroscopic ellipsometry (SE) and surface potential Kelvin probe microscopy (SP-KPM) in conjunction with non-contact atomic force microscopy (AFM) for the study of the different reactivity of Ga-polar and N-polar GaN epitaxial layers with atomic hydrogen. The GaN epitaxial layers are grown by molecular beam epitaxy on sapphire (0 0 0 1) substrates, and GaN and AlN buffer layers are used to grow N-polar and Ga-polar films, respectively. The atomic hydrogen is produced by a remote rf (13.56 MHz) H{sub 2} plasma in order to rule out any ion bombardment of the GaN surface and make the interaction chemical. It is found that the interaction of GaN surfaces with atomic hydrogen depends on polarity, with N-polar GaN exhibiting greater reactivity. Furthermore, it is found that atomic hydrogen is effective in the passivation of grain boundaries and surface defects states.

  11. Interaction of GaN epitaxial layers with atomic hydrogen

    International Nuclear Information System (INIS)

    Losurdo, M.; Giangregorio, M.M.; Capezzuto, P.; Bruno, G.; Namkoong, G.; Doolittle, W.A.; Brown, A.S.

    2004-01-01

    GaN surface passivation processes are still under development and among others hydrogen treatments are investigated. In this study, we use non-destructive optical and electrical probes such as spectroscopic ellipsometry (SE) and surface potential Kelvin probe microscopy (SP-KPM) in conjunction with non-contact atomic force microscopy (AFM) for the study of the different reactivity of Ga-polar and N-polar GaN epitaxial layers with atomic hydrogen. The GaN epitaxial layers are grown by molecular beam epitaxy on sapphire (0 0 0 1) substrates, and GaN and AlN buffer layers are used to grow N-polar and Ga-polar films, respectively. The atomic hydrogen is produced by a remote rf (13.56 MHz) H 2 plasma in order to rule out any ion bombardment of the GaN surface and make the interaction chemical. It is found that the interaction of GaN surfaces with atomic hydrogen depends on polarity, with N-polar GaN exhibiting greater reactivity. Furthermore, it is found that atomic hydrogen is effective in the passivation of grain boundaries and surface defects states

  12. Intermittent contact atomic force microscopy in electrochemical environment

    Energy Technology Data Exchange (ETDEWEB)

    Haering, P; Koetz, R [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Siegenthaler, H [Bern Univ., Bern (Switzerland)

    1997-06-01

    In situ measurements with Atomic Force Microscopy may cause surface modifications due to the tip-surface interactions. As an alternative and less destructive method, Intermittent Contact Atomic Force Microscopy (ICAFM) has been tested in an electrolytic environment. In the ICAFM mode the tip is not constantly in contact with the surface under investigation but is tapping onto the surface with a certain frequency. A commercial Park Scientific Instruments Microscopy has been modified to enable in situ experiment with ICAFM. It was possible to image iridium oxide films with ICAFM in the electrolytic environment without any noticeable surface modifications. (author) 3 figs., 4 refs.

  13. Silicon protected with atomic layer deposited TiO2

    DEFF Research Database (Denmark)

    Seger, Brian; Tilley, David S.; Pedersen, Thomas

    2013-01-01

    The semiconducting materials used for photoelectrochemical (PEC) water splitting must withstand the corrosive nature of the aqueous electrolyte over long time scales in order to be a viable option for large scale solar energy conversion. Here we demonstrate that atomic layer deposited titanium di...

  14. Energy-enhanced atomic layer deposition : offering more processing freedom

    NARCIS (Netherlands)

    Potts, S.E.; Kessels, W.M.M.

    2013-01-01

    Atomic layer deposition (ALD) is a popular deposition technique comprising two or more sequential, self-limiting surface reactions, which make up an ALD cycle. Energy-enhanced ALD is an evolution of traditional thermal ALD methods, whereby energy is supplied to a gas in situ in order to convert a

  15. Atomic layer deposition for nanostructured Li-ion batteries

    NARCIS (Netherlands)

    Knoops, H.C.M.; Donders, M.E.; Sanden, van de M.C.M.; Notten, P.H.L.; Kessels, W.M.M.

    2012-01-01

    Nanostructuring is targeted as a solution to achieve the improvements required for implementing Li-ion batteries in a wide range of applications. These applications range in size from electrical vehicles down to microsystems. Atomic layer deposition (ALD) could be an enabling technology for

  16. Spatial Atomic Layer Deposition of transparent conductive oxides

    NARCIS (Netherlands)

    Illiberi, A.; Scherpenborg, R.; Poodt, P.; Roozeboom, F.

    2013-01-01

    Undoped and indium doped ZnO films have been grown by Spatial Atomic Layer Deposition at atmospheric pressure. The electrical properties of ZnO films are controlled by varying the indium content in the range from 0 to 15 %. A minimum resistivity value of 3 mΩ•cm is measured in 180 nm thick films for

  17. Vibration atomic layer deposition for conformal nanoparticle coating

    Energy Technology Data Exchange (ETDEWEB)

    Park, Suk Won; Woo Kim, Jun; Jong Choi, Hyung; Hyung Shim, Joon, E-mail: shimm@korea.ac.kr [School of Mechanical Engineering, Korea University, Seoul 136-701 (Korea, Republic of)

    2014-01-15

    A vibration atomic layer deposition reactor was developed for fabricating a conformal thin-film coating on nanosize particles. In this study, atomic layer deposition of 10–15-nm-thick Al{sub 2}O{sub 3} films was conducted on a high-surface-area acetylene black powder with particle diameters of 200–250 nm. Intense vibration during the deposition resulted in the effective separation of particles, overcoming the interparticle agglomeration force and enabling effective diffusion of the precursor into the powder chunk; this phenomenon led to the formation of a conformal film coating on the nanopowder particles. It was also confirmed that the atomic layer deposition Al{sub 2}O{sub 3} films initially grew on the high-surface-area acetylene black powder particles as discrete islands, presumably because chemisorption of the precursor and water occurred only on a few sites on the high-surface-area acetylene black powder surface. Relatively sluggish growth of the films during the initial atomic layer deposition cycles was identified from composition analysis.

  18. Spatial atmospheric atomic layer deposition of alxzn1-xo

    NARCIS (Netherlands)

    Illiberi, A.; Scherpenborg, R.; Wu, Y.; Roozeboom, F.; Poodt, P.

    2013-01-01

    The possibility of growing multicomponent oxides by spatial atmospheric atomic layer deposition has been investigated. To this end, Al xZn1-xO films have been deposited using diethyl zinc (DEZ), trimethyl aluminum (TMA), and water as Zn, Al, and O precursors, respectively. When the metal precursors

  19. NREL's Advanced Atomic Layer Deposition Enables Lithium-Ion Battery

    Science.gov (United States)

    Battery Technology News Release: NREL's Advanced Atomic Layer Deposition Enables Lithium-Ion Battery increasingly demanding needs of any battery application. These lithium-ion batteries feature a hybrid solid further customized lithium-ion battery materials for high performance devices by utilizing our patented

  20. A Review of Atomic Layer Deposition for Nanoscale Devices

    Directory of Open Access Journals (Sweden)

    Edy Riyanto

    2012-12-01

    Full Text Available Atomic layer deposition (ALD is a thin film growth technique that utilizes alternating, self-saturation chemical reactions between gaseous precursors to achieve a deposited nanoscale layers. It has recently become a subject of great interest for ultrathin film deposition in many various applications such as microelectronics, photovoltaic, dynamic random access memory (DRAM, and microelectromechanic system (MEMS. By using ALD, the conformability and extreme uniformity of layers can be achieved in low temperature process. It facilitates to be deposited onto the surface in many variety substrates that have low melting temperature. Eventually it has advantages on the contribution to the wider nanodevices.

  1. A combined scanning tunneling microscope-atomic layer deposition tool.

    Science.gov (United States)

    Mack, James F; Van Stockum, Philip B; Iwadate, Hitoshi; Prinz, Fritz B

    2011-12-01

    We have built a combined scanning tunneling microscope-atomic layer deposition (STM-ALD) tool that performs in situ imaging of deposition. It operates from room temperature up to 200 °C, and at pressures from 1 × 10(-6) Torr to 1 × 10(-2) Torr. The STM-ALD system has a complete passive vibration isolation system that counteracts both seismic and acoustic excitations. The instrument can be used as an observation tool to monitor the initial growth phases of ALD in situ, as well as a nanofabrication tool by applying an electric field with the tip to laterally pattern deposition. In this paper, we describe the design of the tool and demonstrate its capability for atomic resolution STM imaging, atomic layer deposition, and the combination of the two techniques for in situ characterization of deposition.

  2. Preparation of Atomically Flat Si(111)-H Surfaces in Aqueous Ammonium Fluoride Solutions Investigated by Using Electrochemical, In Situ EC-STM and ATR-FTIR Spectroscopic Methods

    International Nuclear Information System (INIS)

    Bae, Sang Eun; Oh, Mi Kyung; Min, Nam Ki; Paek, Se Hwan; Hong, Suk In; Lee, Chi-Woo J.

    2004-01-01

    Electrochemical, in situ electrochemical scanning tunneling microscope (EC-STM), and attenuated total reflectance-FTIR (ATR-FTIR) spectroscopic methods were employed to investigate the preparation of atomically flat Si(111)-H surface in ammonium fluoride solutions. Electrochemical properties of atomically flat Si(111)-H surface were characterized by anodic oxidation and cathodic hydrogen evolution with the open circuit potential (OCP) of ca. .0.4 V in concentrated ammonium fluoride solutions. As soon as the natural oxide-covered Si(111) electrode was immersed in fluoride solutions, OCP quickly shifted to near .1 V, which was more negative than the flat band potential of silicon surface, indicating that the surface silicon oxide had to be dissolved into the solution. OCP changed to become less negative as the oxide layer was being removed from the silicon surface. In situ EC-STM data showed that the surface was changed from the initial oxide covered silicon to atomically rough hydrogen-terminated surface and then to atomically flat hydrogen terminated surface as the OCP moved toward less negative potentials. The atomically flat Si(111)-H structure was confirmed by in situ EC-STM and ATR-FTIR data. The dependence of atomically flat Si(111)-H terrace on mis-cut angle was investigated by STM, and the results agreed with those anticipated by calculation. Further, the stability of Si(111)-H was checked by STM in ambient laboratory conditions

  3. Electrode surface engineering by atomic layer deposition: A promising pathway toward better energy storage

    KAUST Repository

    Ahmed, Bilal

    2016-04-29

    Research on electrochemical energy storage devices including Li ion batteries (LIBs), Na ion batteries (NIBs) and supercapacitors (SCs) has accelerated in recent years, in part because developments in nanomaterials are making it possible to achieve high capacities and energy and power densities. These developments can extend battery life in portable devices, and open new markets such as electric vehicles and large-scale grid energy storage. It is well known that surface reactions largely determine the performance and stability of electrochemical energy storage devices. Despite showing impressive capacities and high energy and power densities, many of the new nanostructured electrode materials suffer from limited lifetime due to severe electrode interaction with electrolytes or due to large volume changes. Hence control of the surface of the electrode material is essential for both increasing capacity and improving cyclic stability of the energy storage devices.Atomic layer deposition (ALD) which has become a pervasive synthesis method in the microelectronics industry, has recently emerged as a promising process for electrochemical energy storage. ALD boasts excellent conformality, atomic scale thickness control, and uniformity over large areas. Since ALD is based on self-limiting surface reactions, complex shapes and nanostructures can be coated with excellent uniformity, and most processes can be done below 200. °C. In this article, we review recent studies on the use of ALD coatings to improve the performance of electrochemical energy storage devices, with particular emphasis on the studies that have provided mechanistic insight into the role of ALD in improving device performance. © 2016 Elsevier Ltd.

  4. Atomic and molecular layer deposition for surface modification

    Energy Technology Data Exchange (ETDEWEB)

    Vähä-Nissi, Mika, E-mail: mika.vaha-nissi@vtt.fi [VTT Technical Research Centre of Finland, PO Box 1000, FI‐02044 VTT (Finland); Sievänen, Jenni; Salo, Erkki; Heikkilä, Pirjo; Kenttä, Eija [VTT Technical Research Centre of Finland, PO Box 1000, FI‐02044 VTT (Finland); Johansson, Leena-Sisko, E-mail: leena-sisko.johansson@aalto.fi [Aalto University, School of Chemical Technology, Department of Forest Products Technology, PO Box 16100, FI‐00076 AALTO (Finland); Koskinen, Jorma T.; Harlin, Ali [VTT Technical Research Centre of Finland, PO Box 1000, FI‐02044 VTT (Finland)

    2014-06-01

    Atomic and molecular layer deposition (ALD and MLD, respectively) techniques are based on repeated cycles of gas–solid surface reactions. A partial monolayer of atoms or molecules is deposited to the surface during a single deposition cycle, enabling tailored film composition in principle down to molecular resolution on ideal surfaces. Typically ALD/MLD has been used for applications where uniform and pinhole free thin film is a necessity even on 3D surfaces. However, thin – even non-uniform – atomic and molecular deposited layers can also be used to tailor the surface characteristics of different non-ideal substrates. For example, print quality of inkjet printing on polymer films and penetration of water into porous nonwovens can be adjusted with low-temperature deposited metal oxide. In addition, adhesion of extrusion coated biopolymer to inorganic oxides can be improved with a hybrid layer based on lactic acid. - Graphical abstract: Print quality of a polylactide film surface modified with atomic layer deposition prior to inkjet printing (360 dpi) with an aqueous ink. Number of printed dots illustrated as a function of 0, 5, 15 and 25 deposition cycles of trimethylaluminum and water. - Highlights: • ALD/MLD can be used to adjust surface characteristics of films and fiber materials. • Hydrophobicity after few deposition cycles of Al{sub 2}O{sub 3} due to e.g. complex formation. • Same effect on cellulosic fabrics observed with low temperature deposited TiO{sub 2}. • Different film growth and oxidation potential with different precursors. • Hybrid layer on inorganic layer can be used to improve adhesion of polymer melt.

  5. Morphological reason for enhancement of electrochemical double layer capacitances of various acetylene blacks by electrochemical polarization

    International Nuclear Information System (INIS)

    Kim, Taegon; Ham, Chulho; Rhee, Choong Kyun; Yoon, Seong-Ho; Tsuji, Masaharu; Mochida, Isao

    2008-01-01

    Enhancement of electrochemical capacitance and morphological variations of various acetylene blacks caused by electrochemical polarization are presented. Acetylene blacks of different mean particle diameters were modified by air-oxidation and heat treatment to diversify the morphologies of the acetylene blacks before electrochemical polarization. The various acetylene blacks were electrochemically oxidized at 1.6 V (vs. Ag/AgCl) for 10 s and the polarization step was repeated until the capacitance values did not change any longer. These polarization steps enhanced the capacitances of the acetylene blacks and the specific enhancement factors range from 2 to 5.5. Such an enhancement is strongly related to morphological modification as revealed by transmission electron microscopic observations. The electrochemical polarization resulted in formation of tiny graphene sheets on the wide graphitic carbon surfaces, which were most responsible for the observed capacitive enhancement. Although the pseudo-capacitance increased after polarization by forming oxygenated species on the surfaces, its contribution to the total capacitance was less than 10%. The mechanism of the formation of the tiny graphene sheets during the electrochemical oxidation is described schematically

  6. Electrochemical and radiochemical material transport examinations in humate-containing montmorillonite a bentonite thin layers

    International Nuclear Information System (INIS)

    Antal, K.; Joo, P.

    1999-01-01

    Various humate-containing H-bentonite layers were investigated using 137 Cs ion transport and radio absorption measuring method. These processes can model radioactive contamination migration in soils exposed to acid rains. Experiment using montmorillonite and bentonite layers are discussed, and the results obtained with electrochemical and radioisotope absorption techniques are presented. (R.P.)

  7. Method of bonding an interconnection layer on an electrode of an electrochemical cell

    Science.gov (United States)

    Pal, Uday B.; Isenberg, Arnold O.; Folser, George R.

    1992-01-01

    An electrochemical cell containing an air electrode (16), contacting electrolyte and electronically conductive interconnection layer (26), and a fuel electrode, has the interconnection layer (26) attached by: (A) applying a thin, closely packed, discrete layer of LaCrO.sub.3 particles (30), doped with an element selected from the group consisting of Ca, Sr, Co, Ba, Mg and their mixtures on a portion of the air electrode, and then (B) electrochemical vapor depositing a dense skeletal structure (32) between and around the doped LaCrO.sub.3 particles (30).

  8. Fundamental Challenges for Modeling Electrochemical Energy Storage Systems at the Atomic Scale.

    Science.gov (United States)

    Groß, Axel

    2018-04-23

    There is a strong need to improve the efficiency of electrochemical energy storage, but progress is hampered by significant technological and scientific challenges. This review describes the potential contribution of atomic-scale modeling to the development of more efficient batteries, with a particular focus on first-principles electronic structure calculations. Numerical and theoretical obstacles are discussed, along with ways to overcome them, and some recent examples are presented illustrating the insights into electrochemical energy storage that can be gained from quantum chemical studies.

  9. Electrochemical charging of the single-layer graphene membrane

    Czech Academy of Sciences Publication Activity Database

    Komínková, Zuzana; Kalbáč, Martin

    2016-01-01

    Roč. 253, č. 12 (2016), s. 2331-2335 ISSN 0370-1972 R&D Projects: GA MŠk LL1301; GA ČR(CZ) GBP208/12/G016 Institutional support: RVO:61388955 Keywords : electrochemical charging * graphene membrane * in situ Raman spectroelectrochemistry Subject RIV: CG - Electrochemistry Impact factor: 1.674, year: 2016

  10. Electrochemical potentials of layered oxide and olivine phosphate ...

    Indian Academy of Sciences (India)

    Lithium ion battery; cathodes; density functional theory; density of states; Bader charge analysis; electrochemical ... voltage, ionic diffusion coefficient, phase stability and charge ... routes to synthesis and fabrication techniques. .... from the lithiated one. ..... Ebner W, Fouchard D and Xie L 1994 Solid State Ionics 69 238.

  11. Single-Atom Catalyst of Platinum Supported on Titanium Nitride for Selective Electrochemical Reactions.

    Science.gov (United States)

    Yang, Sungeun; Kim, Jiwhan; Tak, Young Joo; Soon, Aloysius; Lee, Hyunjoo

    2016-02-05

    As a catalyst, single-atom platinum may provide an ideal structure for platinum minimization. Herein, a single-atom catalyst of platinum supported on titanium nitride nanoparticles were successfully prepared with the aid of chlorine ligands. Unlike platinum nanoparticles, the single-atom active sites predominantly produced hydrogen peroxide in the electrochemical oxygen reduction with the highest mass activity reported so far. The electrocatalytic oxidation of small organic molecules, such as formic acid and methanol, also exhibited unique selectivity on the single-atom platinum catalyst. A lack of platinum ensemble sites changed the reaction pathway for the oxygen-reduction reaction toward a two-electron pathway and formic acid oxidation toward direct dehydrogenation, and also induced no activity for the methanol oxidation. This work demonstrates that single-atom platinum can be an efficient electrocatalyst with high mass activity and unique selectivity. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Stop Band Gap in Periodic Layers of Confined Atomic Vapor/Dielectric Medium

    International Nuclear Information System (INIS)

    Li Yuan-Yuan; Li Li; Lu Yi-Xin; Zhang Yan-Peng; Xu Ke-Wei

    2013-01-01

    A stop band gap is predicted in periodic layers of a confined atomic vapor/dielectric medium. Reflection and transmission profile of the layers over the band gap can be dramatically modified by the confined atoms and the number of layer periods. These gap and line features can be ascribed to the enhanced contribution of slow atoms induced by atom-wall collision, transient behavior of atom-light interaction and Fabry—Pérot effects in a thermal confined atomic system

  13. Electrochemical study of the tarnish layer of silver deposited on glass

    OpenAIRE

    Ben Amor , Yasser; Sutter , Eliane; Takenouti , Hisasi; Tribollet , Bernard; Boinet , M.; Faure , R.; Balencie , J.; Durieu , G.

    2014-01-01

    International audience; Cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) were used to characterize the tarnished thin layer of silver deposited on glass. Instead of natural tarnishing in air environment, an acceleration of tarnishing process was realized by immersion of Ag covered glass in 10 μM K2S medium. The X-ray photoelectron spectroscopy (XPS) shows that tarnishing product formed on the silver surface consisted of Ag2S and Ag2O. As electrochemical characterizatio...

  14. Photoenhanced atomic layer epitaxy. Hikari reiki genshiso epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Mashita, M.; Kawakyu, Y. (Toshiba corp., Tokyo (Japan))

    1991-10-01

    The growth temperature range was greatly expanded of atomic layer epitaxy (ALE) expected as the growth process of ultra-thin stacks. Ga layers and As layers were formed one after the other on a GaAs substrate in the atmosphere of trimethylgallium (TMG) or AsH{sub 2} supplied alternately, by KrF excimer laser irradiation normal to the substrate. As a result, the growth temperature range was 460-540{degree}C nearly 10 times that of 500 {plus minus} several degrees centigrade in conventional thermal growth method. Based on the experimental result where light absorption of source molecules adsorbed on a substrate surface was larger than that under gaseous phase condition, new adsorbed layer enhancement model was proposed to explain above irradiation effect verifying it by experiments. As this photoenhancement technique is applied to other materials, possible fabrication of new crystal structures as a super lattice with ultra-thin stacks of single atomic layers is expected because of a larger freedom in material combination for hetero-ALE. 11 refs., 7 figs.

  15. Monocrystalline zinc oxide films grown by atomic layer deposition

    International Nuclear Information System (INIS)

    Wachnicki, L.; Krajewski, T.; Luka, G.; Witkowski, B.; Kowalski, B.; Kopalko, K.; Domagala, J.Z.; Guziewicz, M.; Godlewski, M.; Guziewicz, E.

    2010-01-01

    In the present work we report on the monocrystalline growth of (00.1) ZnO films on GaN template by the Atomic Layer Deposition technique. The ZnO films were obtained at temperature of 300 o C using dietylzinc (DEZn) as a zinc precursor and deionized water as an oxygen precursor. High resolution X-ray diffraction analysis proves that ZnO layers are monocrystalline with rocking curve FWHM of the 00.2 peak equals to 0.07 o . Low temperature photoluminescence shows a sharp and bright excitonic line with FWHM of 13 meV.

  16. Fabrication of Hyperbolic Metamaterials using Atomic Layer Deposition

    DEFF Research Database (Denmark)

    Shkondin, Evgeniy

     technology allowing thickness control on atomic scale. As the deposition relies on a surface reaction, conformal pinhole free films can be deposited on various substrates with advanced topology. This method has been a central theme of the project and a core fabrication technique of plasmonic and dielectric...... in dielectric host, the fabrication is still challenging, since ultrathin, continuous, pinhole free nanometer-scale coatings are desired. The required high-quality thin layers have been fabricated using atomic layer deposition (ALD). It is a relatively new, cyclic, self-limiting thin film deposition......, especially in the infrared range, result in high loss and weak connement to the surface. Additionally, the most implemented metals in plasmonics such as Au and Ag are diffcult to pattern at nanoscale due to their limited chemistry, adhesion or oxidation issues. Therefore the implementation of...

  17. Carbon nanotube forests growth using catalysts from atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Bingan; Zhang, Can; Esconjauregui, Santiago; Xie, Rongsi; Zhong, Guofang; Robertson, John [Department of Engineering, University of Cambridge, Cambridge CB3 0FA (United Kingdom); Bhardwaj, Sunil [Istituto Officina dei Materiali-CNR Laboratorio TASC, s.s. 14, km 163.4, I-34012 Trieste (Italy); Sincrotone Trieste S.C.p.A., s.s. 14, km 163.4, I-34149 Trieste (Italy); Cepek, Cinzia [Istituto Officina dei Materiali-CNR Laboratorio TASC, s.s. 14, km 163.4, I-34012 Trieste (Italy)

    2014-04-14

    We have grown carbon nanotubes using Fe and Ni catalyst films deposited by atomic layer deposition. Both metals lead to catalytically active nanoparticles for growing vertically aligned nanotube forests or carbon fibres, depending on the growth conditions and whether the substrate is alumina or silica. The resulting nanotubes have narrow diameter and wall number distributions that are as narrow as those grown from sputtered catalysts. The state of the catalyst is studied by in-situ and ex-situ X-ray photoemission spectroscopy. We demonstrate multi-directional nanotube growth on a porous alumina foam coated with Fe prepared by atomic layer deposition. This deposition technique can be useful for nanotube applications in microelectronics, filter technology, and energy storage.

  18. Determination of Te in soldering tin using continuous flowing electrochemical hydride generation atomic fluorescence spectrometry

    International Nuclear Information System (INIS)

    Jiang Xianjuan; Gan Wuer; Han Suping; He Youzhao

    2008-01-01

    An electrochemical hydride generation system was developed for the detection of Te by coupling an electrochemical hydride generator with atomic fluorescence spectrometry. Since TeH 2 is unstable and easily decomposes in solution, a reticular W filament cathode was used in the present system. The TeH 2 generated on the cathode surface was effectively driven out by sweeping gas from the cathode chamber. In addition, a low temperature electrochemical cell (10 deg. C) was applied to reduce the decomposition of TeH 2 in solution. The limit of detection (LOD) was 2.2 ng ml -1 and the relative standard deviation (RSD) was 3.9% for nine consecutive measurements of standard solution. This method was successfully employed for determination of Te in soldering tin material

  19. Overview of atomic layer etching in the semiconductor industry

    Energy Technology Data Exchange (ETDEWEB)

    Kanarik, Keren J., E-mail: keren.kanarik@lamresearch.com; Lill, Thorsten; Hudson, Eric A.; Sriraman, Saravanapriyan; Tan, Samantha; Marks, Jeffrey; Vahedi, Vahid; Gottscho, Richard A. [Lam Research Corporation, 4400 Cushing Parkway, Fremont, California 94538 (United States)

    2015-03-15

    Atomic layer etching (ALE) is a technique for removing thin layers of material using sequential reaction steps that are self-limiting. ALE has been studied in the laboratory for more than 25 years. Today, it is being driven by the semiconductor industry as an alternative to continuous etching and is viewed as an essential counterpart to atomic layer deposition. As we enter the era of atomic-scale dimensions, there is need to unify the ALE field through increased effectiveness of collaboration between academia and industry, and to help enable the transition from lab to fab. With this in mind, this article provides defining criteria for ALE, along with clarification of some of the terminology and assumptions of this field. To increase understanding of the process, the mechanistic understanding is described for the silicon ALE case study, including the advantages of plasma-assisted processing. A historical overview spanning more than 25 years is provided for silicon, as well as ALE studies on oxides, III–V compounds, and other materials. Together, these processes encompass a variety of implementations, all following the same ALE principles. While the focus is on directional etching, isotropic ALE is also included. As part of this review, the authors also address the role of power pulsing as a predecessor to ALE and examine the outlook of ALE in the manufacturing of advanced semiconductor devices.

  20. Overview of atomic layer etching in the semiconductor industry

    International Nuclear Information System (INIS)

    Kanarik, Keren J.; Lill, Thorsten; Hudson, Eric A.; Sriraman, Saravanapriyan; Tan, Samantha; Marks, Jeffrey; Vahedi, Vahid; Gottscho, Richard A.

    2015-01-01

    Atomic layer etching (ALE) is a technique for removing thin layers of material using sequential reaction steps that are self-limiting. ALE has been studied in the laboratory for more than 25 years. Today, it is being driven by the semiconductor industry as an alternative to continuous etching and is viewed as an essential counterpart to atomic layer deposition. As we enter the era of atomic-scale dimensions, there is need to unify the ALE field through increased effectiveness of collaboration between academia and industry, and to help enable the transition from lab to fab. With this in mind, this article provides defining criteria for ALE, along with clarification of some of the terminology and assumptions of this field. To increase understanding of the process, the mechanistic understanding is described for the silicon ALE case study, including the advantages of plasma-assisted processing. A historical overview spanning more than 25 years is provided for silicon, as well as ALE studies on oxides, III–V compounds, and other materials. Together, these processes encompass a variety of implementations, all following the same ALE principles. While the focus is on directional etching, isotropic ALE is also included. As part of this review, the authors also address the role of power pulsing as a predecessor to ALE and examine the outlook of ALE in the manufacturing of advanced semiconductor devices

  1. Atomic layer deposition of dielectrics for carbon-based electronics

    Energy Technology Data Exchange (ETDEWEB)

    Kim, J., E-mail: jiyoung.kim@utdallas.edu; Jandhyala, S.

    2013-11-01

    Carbon based nanomaterials like nanotubes and graphene have emerged as future generation electronic materials for device applications because of their interesting properties such as high-mobility and ability to carry high-current densities compared to conventional semiconductor materials like silicon. Therefore, there is a need to develop techniques to integrate robust gate dielectrics with high-quality interfaces for these materials in order to attain maximum performance. To date, a variety of methods including physical vapor deposition, atomic layer deposition (ALD), physical assembly among others have been employed in order to integrate dielectrics for carbon nanotube and graphene based field-effect transistors. Owing to the difficulty in wetting pristine surfaces of nanotubes and graphene, most of the ALD methods require a seeding technique involving non-covalent functionalization of their surfaces in order to nucleate dielectric growth while maintaining their intrinsic properties. A comprehensive review regarding the various dielectric integration schemes for emerging devices and their limitations with respect to ALD based methods along with a future outlook is provided. - Highlights: • We introduce various dielectric integration schemes for carbon-based devices. • Physical vapor deposition methods tend to degrade device performance. • Atomic layer deposition on pristine surfaces of graphene and nanotube is difficult. • We review different seeding techniques for atomic layer deposition of dielectrics. • Compare the performance of graphene top-gate devices with different dielectrics.

  2. Atomic layer deposition of dielectrics for carbon-based electronics

    International Nuclear Information System (INIS)

    Kim, J.; Jandhyala, S.

    2013-01-01

    Carbon based nanomaterials like nanotubes and graphene have emerged as future generation electronic materials for device applications because of their interesting properties such as high-mobility and ability to carry high-current densities compared to conventional semiconductor materials like silicon. Therefore, there is a need to develop techniques to integrate robust gate dielectrics with high-quality interfaces for these materials in order to attain maximum performance. To date, a variety of methods including physical vapor deposition, atomic layer deposition (ALD), physical assembly among others have been employed in order to integrate dielectrics for carbon nanotube and graphene based field-effect transistors. Owing to the difficulty in wetting pristine surfaces of nanotubes and graphene, most of the ALD methods require a seeding technique involving non-covalent functionalization of their surfaces in order to nucleate dielectric growth while maintaining their intrinsic properties. A comprehensive review regarding the various dielectric integration schemes for emerging devices and their limitations with respect to ALD based methods along with a future outlook is provided. - Highlights: • We introduce various dielectric integration schemes for carbon-based devices. • Physical vapor deposition methods tend to degrade device performance. • Atomic layer deposition on pristine surfaces of graphene and nanotube is difficult. • We review different seeding techniques for atomic layer deposition of dielectrics. • Compare the performance of graphene top-gate devices with different dielectrics

  3. Atomic Layer Deposition of SnO2 on MXene for Li-Ion Battery Anodes

    KAUST Repository

    Ahmed, Bilal

    2017-02-24

    In this report, we show that oxide battery anodes can be grown on two-dimensional titanium carbide sheets (MXenes) by atomic layer deposition. Using this approach, we have fabricated a composite SnO2/MXene anode for Li-ion battery applications. The SnO2/MXene anode exploits the high Li-ion capacity offered by SnO2, while maintaining the structural and mechanical integrity by the conductive MXene platform. The atomic layer deposition (ALD) conditions used to deposit SnO2 on MXene terminated with oxygen, fluorine, and hydroxyl-groups were found to be critical for preventing MXene degradation during ALD. We demonstrate that SnO2/MXene electrodes exhibit excellent electrochemical performance as Li-ion battery anodes, where conductive MXene sheets act to buffer the volume changes associated with lithiation and delithiation of SnO2. The cyclic performance of the anodes is further improved by depositing a very thin passivation layer of HfO2, in the same ALD reactor, on the SnO2/MXene anode. This is shown by high-resolution transmission electron microscopy to also improve the structural integrity of SnO2 anode during cycling. The HfO2 coated SnO2/MXene electrodes demonstrate a stable specific capacity of 843 mAh/g when used as Li-ion battery anodes.

  4. Electrochemical properties of novel ionic liquids for electric double layer capacitor applications

    International Nuclear Information System (INIS)

    Sato, Takaya; Masuda, Gen; Takagi, Kentaro

    2004-01-01

    An aliphatic quaternary ammonium salt which has a methoxyethyl group on the nitrogen atom formed an ionic liquid (room temperature molten salt) when combined with the tetrafluoroborate (BF 4 - ) and bis(trifluoromethylsulfonyl)imide [TFSI; (CF 3 SO 2 ) 2 N - ] anions. The limiting oxidation and reduction potentials, specific conductivity, and some other physicochemical properties of the novel ionic liquids, N,N-diethyl-N-methyl-N-(2-methoxyethyl)ammonium tetrafluoroborate (DEME-BF 4 ) and DEME-TFSI have been evaluated and compared with those of 1-ethyl-3-methylimidazolium tetrafluoroborate. DEME-BF 4 is a practically useful ionic liquid for electrochemical capacitors as it has a quite wide potential window (6.0 V) and high ionic conductivity (4.8 mS cm -1 at 25 deg. C). We prepared an electric double layer capacitor (EDLC) composed of a pair of activated carbon electrodes and DEME-BF 4 as the electrolyte. This EDLC (working voltage ∼2.5 V) has both, a higher capacity above room temperature and a better charge-discharge cycle durability at 100 deg. C when compared to a conventional EDLC using an organic liquid electrolyte such as a tetraethylammonium tetrafluoroborate in propylene carbonate

  5. Plasma atomic layer etching using conventional plasma equipment

    International Nuclear Information System (INIS)

    Agarwal, Ankur; Kushner, Mark J.

    2009-01-01

    The decrease in feature sizes in microelectronics fabrication will soon require plasma etching processes having atomic layer resolution. The basis of plasma atomic layer etching (PALE) is forming a layer of passivation that allows the underlying substrate material to be etched with lower activation energy than in the absence of the passivation. The subsequent removal of the passivation with carefully tailored activation energy then removes a single layer of the underlying material. If these goals are met, the process is self-limiting. A challenge of PALE is the high cost of specialized equipment and slow processing speed. In this work, results from a computational investigation of PALE will be discussed with the goal of demonstrating the potential of using conventional plasma etching equipment having acceptable processing speeds. Results will be discussed using inductively coupled and magnetically enhanced capacitively coupled plasmas in which nonsinusoidal waveforms are used to regulate ion energies to optimize the passivation and etch steps. This strategy may also enable the use of a single gas mixture, as opposed to changing gas mixtures between steps

  6. Hybrid inorganic–organic superlattice structures with atomic layer deposition/molecular layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Tynell, Tommi; Yamauchi, Hisao; Karppinen, Maarit, E-mail: maarit.karppinen@aalto.fi [Department of Chemistry, Aalto University, FI-00076 Aalto (Finland)

    2014-01-15

    A combination of the atomic layer deposition (ALD) and molecular layer deposition (MLD) techniques is successfully employed to fabricate thin films incorporating superlattice structures that consist of single layers of organic molecules between thicker layers of ZnO. Diethyl zinc and water are used as precursors for the deposition of ZnO by ALD, while three different organic precursors are investigated for the MLD part: hydroquinone, 4-aminophenol and 4,4′-oxydianiline. The successful superlattice formation with all the organic precursors is verified through x-ray reflectivity studies. The effects of the interspersed organic layers/superlattice structure on the electrical and thermoelectric properties of ZnO are investigated through resistivity and Seebeck coefficient measurements at room temperature. The results suggest an increase in carrier concentration for small concentrations of organic layers, while higher concentrations seem to lead to rather large reductions in carrier concentration.

  7. Photoluminescence of phosphorus atomic layer doped Ge grown on Si

    Science.gov (United States)

    Yamamoto, Yuji; Nien, Li-Wei; Capellini, Giovanni; Virgilio, Michele; Costina, Ioan; Schubert, Markus Andreas; Seifert, Winfried; Srinivasan, Ashwyn; Loo, Roger; Scappucci, Giordano; Sabbagh, Diego; Hesse, Anne; Murota, Junichi; Schroeder, Thomas; Tillack, Bernd

    2017-10-01

    Improvement of the photoluminescence (PL) of Phosphorus (P) doped Ge by P atomic layer doping (ALD) is investigated. Fifty P delta layers of 8 × 1013 cm-2 separated by 4 nm Ge spacer are selectively deposited at 300 °C on a 700 nm thick P-doped Ge buffer layer of 1.4 × 1019 cm-3 on SiO2 structured Si (100) substrate. A high P concentration region of 1.6 × 1020 cm-3 with abrupt P delta profiles is formed by the P-ALD process. Compared to the P-doped Ge buffer layer, a reduced PL intensity is observed, which might be caused by a higher density of point defects in the P delta doped Ge layer. The peak position is shifted by ˜0.1 eV towards lower energy, indicating an increased active carrier concentration in the P-delta doped Ge layer. By introducing annealing at 400 °C to 500 °C after each Ge spacer deposition, P desorption and diffusion is observed resulting in relatively uniform P profiles of ˜2 × 1019 cm-3. Increased PL intensity and red shift of the PL peak are observed due to improved crystallinity and higher active P concentration.

  8. Characterization of self-assembled films of NiGa layered double hydroxide nanosheets and their electrochemical properties

    International Nuclear Information System (INIS)

    Altuntasoglu, Ozge; Unal, Ugur; Ida, Shintaro; Goto, Motonobu; Matsumoto, Yasumichi

    2008-01-01

    In this study, we have demonstrated the synthesis and delamination of a rarely studied NiGa layered double hydroxide (LDH) system. Hydrothermal treatment under agitation conditions at 200 deg. C for 4 h resulted in the formation of highly crystalline NiGa LDHs in a shorter time than those synthesized without agitation. The LDH was delaminated into the individual nanosheets in formamide. The most significant finding in this study is the electrochemical behavior of interlayer ferricyanide anions intercalated with the layer-by-layer (LBL) assembly method. The morphology of LBL film with one layer is also monitored with atomic force microscopy. The cyclic voltammogram is similar to potassium metal hexacyanoferrate systems with its unique two-peak wave. Raman spectrum of the film revealed that the metal center of the interlayer cyano complex is in interaction with the Ni 2+ of the host layer. It was concluded that the two-peak cyclic voltammogram of the film is a result of two different forms of the hexacyanoferrate in the interlayer. - Graphical abstract: The thin film deposited from the nanosheets of ion-exchangeable NiGa LDH and ferricyanide molecule with LBL method gives the typical redox reaction of metal hexacyanoferrates in the interlayer. Current density depends on the number of layers

  9. Sealing of hard CrN and DLC coatings with atomic layer deposition.

    Science.gov (United States)

    Härkönen, Emma; Kolev, Ivan; Díaz, Belén; Swiatowska, Jolanta; Maurice, Vincent; Seyeux, Antoine; Marcus, Philippe; Fenker, Martin; Toth, Lajos; Radnoczi, György; Vehkamäki, Marko; Ritala, Mikko

    2014-02-12

    Atomic layer deposition (ALD) is a thin film deposition technique that is based on alternating and saturating surface reactions of two or more gaseous precursors. The excellent conformality of ALD thin films can be exploited for sealing defects in coatings made by other techniques. Here the corrosion protection properties of hard CrN and diamond-like carbon (DLC) coatings on low alloy steel were improved by ALD sealing with 50 nm thick layers consisting of Al2O3 and Ta2O5 nanolaminates or mixtures. In cross sectional images the ALD layers were found to follow the surface morphology of the CrN coatings uniformly. Furthermore, ALD growth into the pinholes of the CrN coating was verified. In electrochemical measurements the ALD sealing was found to decrease the current density of the CrN coated steel by over 2 orders of magnitude. The neutral salt spray (NSS) durability was also improved: on the best samples the appearance of corrosion spots was delayed from 2 to 168 h. On DLC coatings the adhesion of the ALD sealing layers was weaker, but still clear improvement in NSS durability was achieved indicating sealing of the pinholes.

  10. Corrosion and wear resistant metallic layers produced by electrochemical methods

    DEFF Research Database (Denmark)

    Christoffersen, Lasse; Maahn, Ernst Emanuel

    1999-01-01

    Corrosion and wear-corrosion properties of novel nickel alloy coatings with promising production characteristics have been compared with conventional bulk materials and hard platings. Corrosion properties in neutral and acidic environments have been investigated with electrochemical methods....... Determination of polarisation resistance during 100 hours followed by stepwise anodic polarisation seems to be a promising technique to obtain steady state data on slowly corroding coatings with transient kinetics. A slurry test enables determination of simultaneous corrosion and abrasive wear. Comparison...... of AISI 316, hard chromium and hardened Ni-P shows that there is no universal correlation between surface hardness and wear-corrosion loss. The possible relation between questionable passivity of Ni-P coatings and their high wear-corrosion loss rate compared to hard chromium is discussed....

  11. Pt–Al2O3 dual layer atomic layer deposition coating in high aspect ratio nanopores

    International Nuclear Information System (INIS)

    Pardon, Gaspard; Gatty, Hithesh K; Stemme, Göran; Wijngaart, Wouter van der; Roxhed, Niclas

    2013-01-01

    Functional nanoporous materials are promising for a number of applications ranging from selective biofiltration to fuel cell electrodes. This work reports the functionalization of nanoporous membranes using atomic layer deposition (ALD). ALD is used to conformally deposit platinum (Pt) and aluminum oxide (Al 2 O 3 ) on Pt in nanopores to form a metal–insulator stack inside the nanopore. Deposition of these materials inside nanopores allows the addition of extra functionalities to nanoporous materials such as anodic aluminum oxide (AAO) membranes. Conformal deposition of Pt on such materials enables increased performances for electrochemical sensing applications or fuel cell electrodes. An additional conformal Al 2 O 3 layer on such a Pt film forms a metal–insulator–electrolyte system, enabling field effect control of the nanofluidic properties of the membrane. This opens novel possibilities in electrically controlled biofiltration. In this work, the deposition of these two materials on AAO membranes is investigated theoretically and experimentally. Successful process parameters are proposed for a reliable and cost-effective conformal deposition on high aspect ratio three-dimensional nanostructures. A device consisting of a silicon chip supporting an AAO membrane of 6 mm diameter and 1.3 μm thickness with 80 nm diameter pores is fabricated. The pore diameter is reduced to 40 nm by a conformal deposition of 11 nm Pt and 9 nm Al 2 O 3 using ALD. (paper)

  12. Pt-Al{sub 2}O{sub 3} dual layer atomic layer deposition coating in high aspect ratio nanopores

    Energy Technology Data Exchange (ETDEWEB)

    Pardon, Gaspard; Gatty, Hithesh K; Stemme, Goeran; Wijngaart, Wouter van der; Roxhed, Niclas [KTH Royal Institute of Technology, School of Electrical Engineering, Micro and Nanosystems, Osquldas Vaeg 10, SE-10044 Stockholm (Sweden)

    2013-01-11

    Functional nanoporous materials are promising for a number of applications ranging from selective biofiltration to fuel cell electrodes. This work reports the functionalization of nanoporous membranes using atomic layer deposition (ALD). ALD is used to conformally deposit platinum (Pt) and aluminum oxide (Al{sub 2}O{sub 3}) on Pt in nanopores to form a metal-insulator stack inside the nanopore. Deposition of these materials inside nanopores allows the addition of extra functionalities to nanoporous materials such as anodic aluminum oxide (AAO) membranes. Conformal deposition of Pt on such materials enables increased performances for electrochemical sensing applications or fuel cell electrodes. An additional conformal Al{sub 2}O{sub 3} layer on such a Pt film forms a metal-insulator-electrolyte system, enabling field effect control of the nanofluidic properties of the membrane. This opens novel possibilities in electrically controlled biofiltration. In this work, the deposition of these two materials on AAO membranes is investigated theoretically and experimentally. Successful process parameters are proposed for a reliable and cost-effective conformal deposition on high aspect ratio three-dimensional nanostructures. A device consisting of a silicon chip supporting an AAO membrane of 6 mm diameter and 1.3 {mu}m thickness with 80 nm diameter pores is fabricated. The pore diameter is reduced to 40 nm by a conformal deposition of 11 nm Pt and 9 nm Al{sub 2}O{sub 3} using ALD. (paper)

  13. Pt-Al2O3 dual layer atomic layer deposition coating in high aspect ratio nanopores

    Science.gov (United States)

    Pardon, Gaspard; Gatty, Hithesh K.; Stemme, Göran; van der Wijngaart, Wouter; Roxhed, Niclas

    2013-01-01

    Functional nanoporous materials are promising for a number of applications ranging from selective biofiltration to fuel cell electrodes. This work reports the functionalization of nanoporous membranes using atomic layer deposition (ALD). ALD is used to conformally deposit platinum (Pt) and aluminum oxide (Al2O3) on Pt in nanopores to form a metal-insulator stack inside the nanopore. Deposition of these materials inside nanopores allows the addition of extra functionalities to nanoporous materials such as anodic aluminum oxide (AAO) membranes. Conformal deposition of Pt on such materials enables increased performances for electrochemical sensing applications or fuel cell electrodes. An additional conformal Al2O3 layer on such a Pt film forms a metal-insulator-electrolyte system, enabling field effect control of the nanofluidic properties of the membrane. This opens novel possibilities in electrically controlled biofiltration. In this work, the deposition of these two materials on AAO membranes is investigated theoretically and experimentally. Successful process parameters are proposed for a reliable and cost-effective conformal deposition on high aspect ratio three-dimensional nanostructures. A device consisting of a silicon chip supporting an AAO membrane of 6 mm diameter and 1.3 μm thickness with 80 nm diameter pores is fabricated. The pore diameter is reduced to 40 nm by a conformal deposition of 11 nm Pt and 9 nm Al2O3 using ALD.

  14. Macro-mechanics controls quantum mechanics: mechanically controllable quantum conductance switching of an electrochemically fabricated atomic-scale point contact.

    Science.gov (United States)

    Staiger, Torben; Wertz, Florian; Xie, Fangqing; Heinze, Marcel; Schmieder, Philipp; Lutzweiler, Christian; Schimmel, Thomas

    2018-01-12

    Here, we present a silver atomic-scale device fabricated and operated by a combined technique of electrochemical control (EC) and mechanically controllable break junction (MCBJ). With this EC-MCBJ technique, we can perform mechanically controllable bistable quantum conductance switching of a silver quantum point contact (QPC) in an electrochemical environment at room temperature. Furthermore, the silver QPC of the device can be controlled both mechanically and electrochemically, and the operating mode can be changed from 'electrochemical' to 'mechanical', which expands the operating mode for controlling QPCs. These experimental results offer the perspective that a silver QPC may be used as a contact for a nanoelectromechanical relay.

  15. Issues involved in the atomic layer deposition of metals

    Science.gov (United States)

    Grubbs, Robert Kimes

    Auger Electron Spectroscopy (AES) was used to study the nucleation and growth of tungsten on aluminum oxide surfaces. Tungsten metal was deposited using Atomic Layer Deposition (ALD) techniques. ALD uses sequential surface reactions to deposit material with atomic layer control. W ALD is performed using sequential exposures of WF6 and Si2H6. The step-wise nature of W ALD allows nucleation studies to be performed by analyzing the W surface concentration after each ALD reaction. Nucleation and growth regions can be identified by quantifying the AES signal intensities from both the W surface and the Al2O3 substrate. W nucleation occurred in 3 ALD reaction cycles. The AES results yielded a nucleation rate of 1.0 A/ALD cycle and a growth rate of ≈3 A/ALD cycle. AES studies also explored the nucleation and growth of Al2O3 on W. Al2O3 nucleated in 1 ALD cycle giving a nucleation rate of 3.5 A/ALD cycle and a subsequent growth rate of 1.0 A/ALD cycle. Mass spectrometry was then used to study the ALD reaction chemistry of tungsten deposition. Because of the step-wise nature of the W ALD chemistry, each W ALD reaction could be studied independently. The gaseous mass products were identified from both the WF6 and Si2H6 reactions. H2, HF and SiF4 mass products were observed for the WF6 reaction. The Si2H6 reaction displayed a room temperature reaction and a 200°C reaction. Products from the room temperature Si2H6 reaction were H2 and SiF3H. The reaction at 200°C yielded only H2 as a reaction product. H2 desorption from the surface contributes to the 200°C Si2H6 reaction. AES was used to confirm that the gas phase reaction products are correlated with a change in the surface species. Atomic hydrogen reduction of metal halides and oganometallic compounds provides another method for depositing metals with atomic layer control. The quantity of atomic hydrogen necessary to perform this chemistry is critical to the metal ALD process. A thermocouple probe was constructed to

  16. Formation of mixed organic layers by stepwise electrochemical reduction of diazonium compounds.

    Science.gov (United States)

    Santos, Luis; Ghilane, Jalal; Lacroix, Jean Christophe

    2012-03-28

    This work describes the formation of a mixed organic layer covalently attached to a carbon electrode. The strategy adopted is based on two successive electrochemical reductions of diazonium salts. First, bithiophene phenyl (BTB) diazonium salt is reduced using host/guest complexation in a water/cyclodextrin (β-CD) solution. The resulting layer consists of grafted BTB oligomers and cyclodextrin that can be removed from the surface. The electrochemical response of several outer-sphere redox probes on such BTB/CD electrodes is close to that of a diode, thanks to the easily p-dopable oligo(BTB) moieties. When CD is removed from the surface, pinholes are created and this diode like behavior is lost. Following this, nitrophenyl (NP) diazonium is reduced to graft a second component. Electrochemical study shows that upon grafting NP insulating moieties, the diode-like behavior of the layer is restored which demonstrates that NP is grafted predominately in the empty spaces generated by β-CD desorption. As a result, a mixed BTB/NP organic layer covalently attached to a carbon electrode is obtained using a stepwise electrochemical reduction of two diazonium compounds.

  17. Electrochemical characterization of single-walled carbon nanotubes for electrochemical double layer capacitors using non-aqueous electrolyte

    International Nuclear Information System (INIS)

    Ruch, P.W.; Koetz, R.; Wokaun, A.

    2009-01-01

    Single-walled carbon nanotubes (SWCNTs) were investigated by cyclic voltammetry and electrochemical impedance spectroscopy in a non-aqueous electrolyte, 1 M Et 4 NBF 4 in acetonitrile, suitable for supercapacitors. Further, in situ dilatometry and in situ conductance measurements were performed on single electrodes and the results compared to an activated carbon, YP17. Both materials show capacitive behavior characteristic of high surface area electrodes for supercapacitors, with the maximum full cell gravimetric capacitance being 34 F/g for YP17 and 20 F/g for SWCNTs at 2.5 V with respect to the total active electrode mass. The electronic resistance of SWCNTs and activated carbon decreases significantly during charging, showing similarities of the two materials during electrochemical doping. The SWCNT electrode expands irreversibly during the first electrochemical potential sweep as verified by in situ dilatometry, indicative of at least partial debundling of the SWCNTs. A reversible periodic swelling and shrinking during cycling is observed for both materials, with the magnitude of expansion depending on the type of ions forming the double layer.

  18. Atomic layer deposition of a MoS₂ film.

    Science.gov (United States)

    Tan, Lee Kheng; Liu, Bo; Teng, Jing Hua; Guo, Shifeng; Low, Hong Yee; Tan, Hui Ru; Chong, Christy Yuen Tung; Yang, Ren Bin; Loh, Kian Ping

    2014-09-21

    A mono- to multilayer thick MoS₂ film has been grown by using the atomic layer deposition (ALD) technique at 300 °C on a sapphire wafer. ALD provides precise control of the MoS₂ film thickness due to pulsed introduction of the reactants and self-limiting reactions of MoCl₅ and H₂S. A post-deposition annealing of the ALD-deposited monolayer film improves the crystallinity of the film, which is evident from the presence of triangle-shaped crystals that exhibit strong photoluminescence in the visible range.

  19. Reversible mechano-electrochemical writing of metallic nanostructures with the tip of an atomic force microscope

    Directory of Open Access Journals (Sweden)

    Christian Obermair

    2012-12-01

    Full Text Available We recently introduced a method that allows the controlled deposition of nanoscale metallic patterns at defined locations using the tip of an atomic force microscope (AFM as a “mechano-electrochemical pen”, locally activating a passivated substrate surface for site-selective electrochemical deposition. Here, we demonstrate the reversibility of this process and study the long-term stability of the resulting metallic structures. The remarkable stability for more than 1.5 years under ambient air without any observable changes can be attributed to self-passivation. After AFM-activated electrochemical deposition of copper nanostructures on a polycrystalline gold film and subsequent AFM imaging, the copper nanostructures could be dissolved by reversing the electrochemical potential. Subsequent AFM-tip-activated deposition of different copper nanostructures at the same location where the previous structures were deleted, shows that there is no observable memory effect, i.e., no effect of the previous writing process on the subsequent writing process. Thus, the four processes required for reversible information storage, “write”, “read”, “delete” and “re-write”, were successfully demonstrated on the nanometer scale.

  20. Probing individual redox PEGylated gold nanoparticles by electrochemical--atomic force microscopy.

    Science.gov (United States)

    Huang, Kai; Anne, Agnès; Bahri, Mohamed Ali; Demaille, Christophe

    2013-05-28

    Electrochemical-atomic force microscopy (AFM-SECM) was used to simultaneously probe the physical and electrochemical properties of individual ~20 nm sized gold nanoparticles functionalized by redox-labeled PEG chains. The redox PEGylated nanoparticles were assembled onto a gold electrode surface, forming a random nanoarray, and interrogated in situ by a combined AFM-SECM nanoelectrode probe. We show that, in this so-called mediator-tethered (Mt) mode, AFM-SECM affords the nanometer resolution required for resolving the position of individual nanoparticles and measuring their size, while simultaneously electrochemically directly contacting the redox-PEG chains they bear. The dual measurement of the size and current response of single nanoparticles uniquely allows the statistical distribution in grafting density of PEG on the nanoparticles to be determined and correlated to the nanoparticle diameter. Moreover, because of its high spatial resolution, Mt/AFM-SECM allows "visualizing" simultaneously but independently the PEG corona and the gold core of individual nanoparticles. Beyond demonstrating the achievement of single-nanoparticle resolution using an electrochemical microscopy technique, the results reported here also pave the way toward using Mt/AFM-SECM for imaging nano-objects bearing any kind of suitably redox-labeled (bio)macromolecules.

  1. Reversible mechano-electrochemical writing of metallic nanostructures with the tip of an atomic force microscope.

    Science.gov (United States)

    Obermair, Christian; Kress, Marina; Wagner, Andreas; Schimmel, Thomas

    2012-01-01

    We recently introduced a method that allows the controlled deposition of nanoscale metallic patterns at defined locations using the tip of an atomic force microscope (AFM) as a "mechano-electrochemical pen", locally activating a passivated substrate surface for site-selective electrochemical deposition. Here, we demonstrate the reversibility of this process and study the long-term stability of the resulting metallic structures. The remarkable stability for more than 1.5 years under ambient air without any observable changes can be attributed to self-passivation. After AFM-activated electrochemical deposition of copper nanostructures on a polycrystalline gold film and subsequent AFM imaging, the copper nanostructures could be dissolved by reversing the electrochemical potential. Subsequent AFM-tip-activated deposition of different copper nanostructures at the same location where the previous structures were deleted, shows that there is no observable memory effect, i.e., no effect of the previous writing process on the subsequent writing process. Thus, the four processes required for reversible information storage, "write", "read", "delete" and "re-write", were successfully demonstrated on the nanometer scale.

  2. Electrochemical preconcentration and hydride generation methods for trace determination of selenium by atomic absorption spectrometry

    International Nuclear Information System (INIS)

    Bye, R.

    1986-01-01

    The use of atomic absorption spectrometry in combination with two different preconcentration/separation techniques for the determination of trace concentrations of selenium is described. Electrochemical preconcentration onto a platinum electrode with a subsequent atomization of selenium is discussed briefly. Several parameters are considered such as the presence of depolarizers, and the temperature of the electrolyzed solutions. Special attention is payed to the efficiency of the atomization step, and a method to improve this is proposed. Applications of the technique to real samples are also reported. Secondly, the separation of the selenium as the volatile selenium hydride from the sample solution is considered. Several papers in this thesis deal with commonly occurring interferants as nickel and copper and with ways of minimizing or avoiding the interferring effects, whereas other papers relate to more theoretical aspects of the hydride generation process. New methods for the determination of selenium in technical samples with high contents of nickel and copper are also presented

  3. Electrochemical lithium and sodium intercalation into the tantalum-rich layered chalcogenides Ta2Se and Ta2Te3

    International Nuclear Information System (INIS)

    Lavela, P.; Tirado, J.L.

    1999-01-01

    Two-layered tantalum chalcogenides are evaluated as alkali metal intercalation hosts in lithium and sodium electrochemical cells. The metal-rich pseudo-two-dimensional solid Ta 2 Se shows a poor intercalation behaviour. Lithium reacts with the selenide by deintercalating selenium from the blocks of Ta-related b.c.c. structure leading to a collapse of the structure and the formation of tantalum metal. Sodium is reversibly intercalated to a limited extent leading to complex structural changes in the selenide, as revealed by electron diffraction. The two-dimensional telluride Ta 2 Te 3 allows a topotactic intercalation of lithium below 1 F/mol, while a more extended reaction leads to sample amorphization. The better intercalation behaviour of this solid can be related with the one-atom thick metal layer and the van der Waals gap separating tellurium atoms of successive layers. Sodium can be reversibly intercalated into Ta 2 Te 3 in sodium cells which show a good cycling behaviour. Exposure of the intercalated solid to water vapour allows the preparation of hydrated products with a monolayer or a bilayer of water molecules solvating sodium in the interlayer space. (orig.)

  4. Atomic layer deposition of alternative glass microchannel plates

    Energy Technology Data Exchange (ETDEWEB)

    O' Mahony, Aileen, E-mail: aom@incomusa.com; Craven, Christopher A.; Minot, Michael J.; Popecki, Mark A.; Renaud, Joseph M.; Bennis, Daniel C.; Bond, Justin L.; Stochaj, Michael E.; Foley, Michael R.; Adams, Bernhard W. [Incom, Inc., 294 Southbridge Road, Charlton, Massachusetts 01507 (United States); Mane, Anil U.; Elam, Jeffrey W. [Argonne National Laboratory, 9700 S. Cass Ave., Argonne, Illinois 60439 (United States); Ertley, Camden; Siegmund, Oswald H. W. [Space Sciences Laboratory, University of California, 7 Gauss Way, Berkeley, California 94720 (United States)

    2016-01-15

    The technique of atomic layer deposition (ALD) has enabled the development of alternative glass microchannel plates (MCPs) with independently tunable resistive and emissive layers, resulting in excellent thickness uniformity across the large area (20 × 20 cm), high aspect ratio (60:1 L/d) glass substrates. Furthermore, the use of ALD to deposit functional layers allows the optimal substrate material to be selected, such as borosilicate glass, which has many benefits compared to the lead-oxide glass used in conventional MCPs, including increased stability and lifetime, low background noise, mechanical robustness, and larger area (at present up to 400 cm{sup 2}). Resistively stable, high gain MCPs are demonstrated due to the deposition of uniform ALD resistive and emissive layers on alternative glass microcapillary substrates. The MCP performance characteristics reported include increased stability and lifetime, low background noise (0.04 events cm{sup −2} s{sup −1}), and low gain variation (±5%)

  5. Fabrication of atomic-scale gold junctions by electrochemical plating using a common medical liquid

    Science.gov (United States)

    Umeno, A.; Hirakawa, K.

    2005-04-01

    Fabrication of nanometer-separated gold junctions has been performed using "iodine tincture," a medical liquid known as a disinfectant, as an etching/deposition electrolyte. In the gold-dissolved iodine tincture, gold electrodes were grown or eroded slowly enough to form quantum point contacts in an atomic scale. The resistance evolution during the electrochemical deposition showed plateaus at integer multiples of the resistance quantum, (2e2/h)-1, at room temperature (e: the elementary charge, h: the Planck constant). Iodine tincture is a commercially available common material, which makes the fabrication process to be simple and cost effective. Moreover, in contrast to the conventional electrochemical approaches, this method is free from highly toxic cyanide compounds or extraordinarily strong acids.

  6. Fabrication Of Atomic-scale Gold Junctions By Electrochemical Plating Technique Using A Common Medical Disinfectant

    Science.gov (United States)

    Umeno, Akinori; Hirakawa, Kazuhiko

    2005-06-01

    Iodine tincture, a medical liquid familiar as a disinfectant, was introduced as an etching/deposition electrolyte for the fabrication of nanometer-separated gold electrodes. In the gold dissolved iodine tincture, the gold electrodes were grown or eroded slowly in atomic scale, enough to form quantum point contacts. The resistance evolution during the electrochemical deposition showed plateaus at integer multiples of the resistance quantum, (2e2/h)-1, at the room temperature. The iodine tincture is a commercially available common material, which makes the fabrication process to be the simple and cost effective. Moreover, in contrast to the conventional electrochemical approaches, this method is free from highly toxic cyanide compounds or extraordinary strong acid. We expect this method to be a useful interface between single-molecular-scale structures and macroscopic opto-electronic devices.

  7. Electrochemical behavior of adrenaline at the carbon atom wire modified electrode

    Energy Technology Data Exchange (ETDEWEB)

    Xue Kuanhong [Chemistry Department, Nanjing Normal University, Jiangsu Engineering Research Center for Bio-medical Function Materials, 122 NingHai Road, Nanjing, JiangSu 210097 (China)], E-mail: khxue@njnu.edu.cn; Liu Jiamei [Chemistry Department, Nanjing Normal University, Jiangsu Engineering Research Center for Bio-medical Function Materials, 122 NingHai Road, Nanjing, JiangSu 210097 (China); Wei Ribing [Chemistry Department, Nanjing Normal University, Jiangsu Engineering Research Center for Bio-medical Function Materials, 122 NingHai Road, Nanjing, JiangSu 210097 (China); Chen Shaopeng [Chemistry Department, Nanjing Normal University, Jiangsu Engineering Research Center for Bio-medical Function Materials, 122 NingHai Road, Nanjing, JiangSu 210097 (China)

    2006-09-11

    Electrochemical behavior of adrenaline at an electrode modified by carbon atom wires (CAWs), a new material, was investigated by cyclic voltammetry combined with UV-vis spectrometry, and forced convection method. As to the electrochemical response of redox of adrenaline/adrenalinequinone couple in 0.50 M H{sub 2}SO{sub 4}, at a nitric acid treated CAW modified electrode, the anodic and cathodic peak potentials E {sub pa} and E {sub pc} shifted by 87 mV negatively and 139 mV in the positive direction, respectively, and standard heterogeneous rate constant k {sup 0} increased by 16 times compared to the corresponding bare electrode, indicating the extraordinary activity of CAWs in electrocatalysis for the process.

  8. Electrochemical behavior of adrenaline at the carbon atom wire modified electrode

    Science.gov (United States)

    Xue, Kuan-Hong; Liu, Jia-Mei; Wei, Ri-Bing; Chen, Shao-Peng

    2006-09-01

    Electrochemical behavior of adrenaline at an electrode modified by carbon atom wires (CAWs), a new material, was investigated by cyclic voltammetry combined with UV-vis spectrometry, and forced convection method. As to the electrochemical response of redox of adrenaline/adrenalinequinone couple in 0.50 M H 2SO 4, at a nitric acid treated CAW modified electrode, the anodic and cathodic peak potentials Epa and Epc shifted by 87 mV negatively and 139 mV in the positive direction, respectively, and standard heterogeneous rate constant k0 increased by 16 times compared to the corresponding bare electrode, indicating the extraordinary activity of CAWs in electrocatalysis for the process.

  9. Electrochemical behavior of adrenaline at the carbon atom wire modified electrode

    International Nuclear Information System (INIS)

    Xue Kuanhong; Liu Jiamei; Wei Ribing; Chen Shaopeng

    2006-01-01

    Electrochemical behavior of adrenaline at an electrode modified by carbon atom wires (CAWs), a new material, was investigated by cyclic voltammetry combined with UV-vis spectrometry, and forced convection method. As to the electrochemical response of redox of adrenaline/adrenalinequinone couple in 0.50 M H 2 SO 4 , at a nitric acid treated CAW modified electrode, the anodic and cathodic peak potentials E pa and E pc shifted by 87 mV negatively and 139 mV in the positive direction, respectively, and standard heterogeneous rate constant k 0 increased by 16 times compared to the corresponding bare electrode, indicating the extraordinary activity of CAWs in electrocatalysis for the process

  10. Atomic layer deposition of GaN at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Ozgit, Cagla; Donmez, Inci; Alevli, Mustafa; Biyikli, Necmi [UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara (Turkey)

    2012-01-15

    The authors report on the self-limiting growth of GaN thin films at low temperatures. Films were deposited on Si substrates by plasma-enhanced atomic layer deposition using trimethylgallium (TMG) and ammonia (NH{sub 3}) as the group-III and -V precursors, respectively. GaN deposition rate saturated at 185 deg. C for NH{sub 3} doses starting from 90 s. Atomic layer deposition temperature window was observed from 185 to {approx}385 deg. C. Deposition rate, which is constant at {approx}0.51 A/cycle within the temperature range of 250 - 350 deg. C, increased slightly as the temperature decreased to 185 deg. C. In the bulk film, concentrations of Ga, N, and O were constant at {approx}36.6, {approx}43.9, and {approx}19.5 at. %, respectively. C was detected only at the surface and no C impurities were found in the bulk film. High oxygen concentration in films was attributed to the oxygen impurities present in group-V precursor. High-resolution transmission electron microscopy studies revealed a microstructure consisting of small crystallites dispersed in an amorphous matrix.

  11. Titanium dioxide thin films by atomic layer deposition: a review

    Science.gov (United States)

    Niemelä, Janne-Petteri; Marin, Giovanni; Karppinen, Maarit

    2017-09-01

    Within its rich phase diagram titanium dioxide is a truly multifunctional material with a property palette that has been shown to span from dielectric to transparent-conducting characteristics, in addition to the well-known catalytic properties. At the same time down-scaling of microelectronic devices has led to an explosive growth in research on atomic layer deposition (ALD) of a wide variety of frontier thin-film materials, among which TiO2 is one of the most popular ones. In this topical review we summarize the advances in research of ALD of titanium dioxide starting from the chemistries of the over 50 different deposition routes developed for TiO2 and the resultant structural characteristics of the films. We then continue with the doped ALD-TiO2 thin films from the perspective of dielectric, transparent-conductor and photocatalytic applications. Moreover, in order to cover the latest trends in the research field, both the variously constructed TiO2 nanostructures enabled by ALD and the Ti-based hybrid inorganic-organic films grown by the emerging ALD/MLD (combined atomic/molecular layer deposition) technique are discussed.

  12. Atomic layer deposition of superparamagnetic and ferrimagnetic magnetite thin films

    International Nuclear Information System (INIS)

    Zhang, Yijun; Liu, Ming; Ren, Wei; Zhang, Yuepeng; Chen, Xing; Ye, Zuo-Guang

    2015-01-01

    One of the key challenges in realizing superparamagnetism in magnetic thin films lies in finding a low-energy growth way to create sufficiently small grains and magnetic domains which allow the magnetization to randomly and rapidly reverse. In this work, well-defined superparamagnetic and ferrimagnetic Fe 3 O 4 thin films are successfully prepared using atomic layer deposition technique by finely controlling the growth condition and post-annealing process. As-grown Fe 3 O 4 thin films exhibit a conformal surface and poly-crystalline nature with an average grain size of 7 nm, resulting in a superparamagnetic behavior with a blocking temperature of 210 K. After post-annealing in H 2 /Ar at 400 °C, the as-grown α−Fe 2 O 3 sample is reduced to Fe 3 O 4 phase, exhibiting a ferrimagnetic ordering and distinct magnetic shape anisotropy. Atomic layer deposition of magnetite thin films with well-controlled morphology and magnetic properties provides great opportunities for integrating with other order parameters to realize magnetic nano-devices with potential applications in spintronics, electronics, and bio-applications

  13. NiO/nanoporous graphene composites with excellent supercapacitive performance produced by atomic layer deposition

    International Nuclear Information System (INIS)

    Chen, Caiying; Chen, Chaoqiu; Duan, Feifei; Zhao, Shichao; Qin, Yong; Huang, Peipei; Li, Ping; Fan, Jinchuan; Song, Weiguo

    2014-01-01

    Nickel oxide (NiO) is a promising electrode material for supercapacitors because of its low cost and high theoretical specific capacitance of 2573 F g −1 . However, the low electronic conductivity and poor cycling stability of NiO limit its practical applications. To overcome these limitations, an efficient atomic layer deposition (ALD) method is demonstrated here for the fabrication of NiO/nanoporous graphene (NG) composites as electrode materials for supercapacitors. ALD allows uniform deposition of NiO nanoparticles with controlled sizes on the surface of NG, thus offering a novel route to design NiO/NG composites for supercapacitor applications with high surface areas and greatly improved electrical conductivity and cycle stability. Electrochemical measurements reveal that the NiO/NG composites obtained by ALD exhibited excellent specific capacitance of up to ∼1005.8 F g −1 per mass of the composite electrode (the specific capacitance value is up to ∼1897.1 F g −1 based on the active mass of NiO), and stable performance after 1500 cycles. Furthermore, electrochemical performance of the NiO/NG composites is found to strongly depend on the size of NiO nanoparticles. (paper)

  14. Facile electrochemical synthesis of few layered graphene from discharged battery electrode and its

    Directory of Open Access Journals (Sweden)

    Santosh K. Tiwari

    2017-05-01

    Full Text Available A cost-effective, simple and non-hazardous route for synthesis of few-layered graphene from waste zinc carbon battery (ZCB electrodes via electrochemical expansion (ECE has been reported. In this synthesis, we have electrochemically exfoliated the graphene layers, by intercalating sodium dodecyl benzenesulfonate (SDBS surfactant into graphitic layers at different D.C. voltages with a constant SDBS concentration. The graphene sheets were isolated, purified and characterized by Transmission electron microscopy (TEM, Scanning electron microscopy (SEM, Fourier transform infrared spectrometry (FTIR, X-ray diffraction (XRD, Raman spectrometry, Ultraviolet absorption (UV, Selected area electron diffraction (SAED and Cyclic voltammetry. Best result was obtained at 4.5 V of D.C. A possible mechanism for the intercalation process has been proposed. A promising application of the produced material for supercapacitor application has also been explored in combination with polyaniline.

  15. Constructing oxide interfaces and heterostructures by atomic layer-by-layer laser molecular beam epitaxy

    OpenAIRE

    Lei, Qingyu; Golalikhani, Maryam; Davidson, Bruce A.; Liu, Guozhen; Schlom, D. G.; Qiao, Qiao; Zhu, Yimei; Chandrasena, Ravini U.; Yang, Weibing; Gray, Alexander X.; Arenholz, Elke; Farrar, Andrew K.; Tenne, Dmitri A.; Hu, Minhui; Guo, Jiandong

    2016-01-01

    Advancements in nanoscale engineering of oxide interfaces and heterostructures have led to discoveries of emergent phenomena and new artificial materials. Combining the strengths of reactive molecular-beam epitaxy and pulsed-laser deposition, we show here, with examples of Sr1+xTi1-xO3+delta, Ruddlesden-Popper phase Lan+1NinO3n+1 (n = 4), and LaAl1+yO3(1+0.5y)/SrTiO3 interfaces, that atomic layer-by-layer laser molecular-beam epitaxy (ALL-Laser MBE) significantly advances the state of the art...

  16. Atomic Layer Deposition of Nickel on ZnO Nanowire Arrays for High-Performance Supercapacitors.

    Science.gov (United States)

    Ren, Qing-Hua; Zhang, Yan; Lu, Hong-Liang; Wang, Yong-Ping; Liu, Wen-Jun; Ji, Xin-Ming; Devi, Anjana; Jiang, An-Quan; Zhang, David Wei

    2018-01-10

    A novel hybrid core-shell structure of ZnO nanowires (NWs)/Ni as a pseudocapacitor electrode was successfully fabricated by atomic layer deposition of a nickel shell, and its capacitive performance was systemically investigated. Transmission electron microscopy and X-ray photoelectron spectroscopy results indicated that the NiO was formed at the interface between ZnO and Ni where the Ni was oxidized by ZnO during the ALD of the Ni layer. Electrochemical measurement results revealed that the Ti/ZnO NWs/Ni (1500 cycles) electrode with a 30 nm thick Ni-NiO shell layer had the best supercapacitor properties including ultrahigh specific capacitance (∼2440 F g -1 ), good rate capability (80.5%) under high current charge-discharge conditions, and a relatively better cycling stability (86.7% of the initial value remained after 750 cycles at 10 A g -1 ). These attractive capacitive behaviors are mainly attributed to the unique core-shell structure and the combined effect of ZnO NW arrays as short charge transfer pathways for ion diffusion and electron transfer as well as conductive Ni serving as channel for the fast electron transport to Ti substrate. This high-performance Ti/ZnO NWs/Ni hybrid structure is expected to be one of a promising electrodes for high-performance supercapacitor applications.

  17. Modification of SnO2 Anodes by Atomic Layer Deposition for High Performance Lithium Ion Batteries

    KAUST Repository

    Yesibolati, Nulati

    2013-05-01

    Tin dioxide (SnO2) is considered one of the most promising anode materials for Lithium ion batteries (LIBs), due to its large theoretical capacity and natural abundance. However, its low electronic/ionic conductivities, large volume change during lithiation/delithiation and agglomeration prevent it from further commercial applications. In this thesis, we investigate modified SnO2 as a high energy density anode material for LIBs. Specifically two approaches are presented to improve battery performances. Firstly, SnO2 electrochemical performances were improved by surface modification using Atomic Layer Deposition (ALD). Ultrathin Al2O3 or HfO2 were coated on SnO2 electrodes. It was found that electrochemical performances had been enhanced after ALD deposition. In a second approach, we implemented a layer-by-layer (LBL) assembled graphene/carbon-coated hollow SnO2 spheres as anode material for LIBs. Our results indicated that the LBL assembled electrodes had high reversible lithium storage capacities even at high current densities. These superior electrochemical performances are attributed to the enhanced electronic conductivity and effective lithium diffusion, because of the interconnected graphene/carbon networks among nanoparticles of the hollow SnO2 spheres.

  18. Electrochemical properties of porous carbon black layer as an electron injector into iodide redox couple

    International Nuclear Information System (INIS)

    Kim, Jung-Min; Rhee, Shi-Woo

    2012-01-01

    Highlights: ► Carbon black (CB) porous layer for triiodide (I 3 − ) ion reduction is coated with spray coating method at 120 °C on the fluorine-doped tin oxide glass. ► The electrochemical impedance spectroscopy is analyzed for a symmetric cell and a new circuit model is applied to identify electrochemical parameters. ► Decreased particle size and increased thickness improve the catalytic activity because of the increase in the surface area and the conductivity of the CB layer. - Abstract: Electrochemical properties of carbon black (CB) porous layer as a counter electrode in dye-sensitized solar cells (DSC) are studied. CB electrode for triiodide (I 3 − ) ion reduction is coated with spray coating method on the fluorine-doped tin oxide glass at 120 °C. The CB particle size is varied from 20 nm to 90 nm and the CB electrode thickness is controlled from 1 μm to 9 μm by controlling the spraying time. The electrochemical impedance spectroscopy is analyzed for a symmetric cell and a new circuit model is applied to identify electrochemical parameters. As the CB particle size is decreased, the catalytic activity is improved because of the increase in the surface area and the conductivity of the CB layer. Increased CB electrode thickness also improves the catalytic activity and leads to the low charge transfer resistance at the electrolyte/CB electrode interface. The CB counter electrode with the particle size of 20 nm and the thickness of 9 μm for DSC shows the energy conversion efficiency of 7.2% with the highest fill factor (FF) of 65.6%, which is similar to the Pt counter electrode with FF of 65.8% and the efficiency of 7.6%.

  19. Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon

    Energy Technology Data Exchange (ETDEWEB)

    Chubenko, E. B., E-mail: eugene.chubenko@gmail.com; Redko, S. V.; Sherstnyov, A. I.; Petrovich, V. A.; Kotov, D. A.; Bondarenko, V. P. [Belarusian State University of Information and RadioElectronics (Belarus)

    2016-03-15

    The influence of the surface layer on the process of the electrochemical deposition of metals and semiconductors into porous silicon is studied. It is shown that the surface layer differs in structure and electrical characteristics from the host porous silicon bulk. It is established that a decrease in the conductivity of silicon crystallites that form the surface layer of porous silicon has a positive effect on the process of the filling of porous silicon with metals and semiconductors. This is demonstrated by the example of nickel and zinc oxide. The effect can be used for the formation of nanocomposite materials on the basis of porous silicon and nanostructures with a high aspect ratio.

  20. Improved Electrochemical Cycling Durability in a Nickel Oxide Double-Layered Film.

    Science.gov (United States)

    Hou, Shuai; Zhang, Xiang; Tian, Yanlong; Zhao, Jiupeng; Geng, Hongbin; Qu, Huiying; Zhang, Hangchuan; Zhang, Kun; Wang, Binsheng; Gavrilyuk, Alexander; Li, Yao

    2017-11-16

    For the first time, a crystalline-amorphous double-layered NiO x film has been prepared by reactive radio frequency magnetron sputtering. This film has exhibited improved electrochemical cycling durability, whereas other electrochromic parameters have been maintained at the required level, namely, a short coloration/bleaching time (0.8 s/1.1 s) and an enhanced transmittance modulation range (62.2 %) at λ=550 nm. Additionally, the double-layered film has shown better reversibility than that of amorphous and crystalline single-layered films. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon

    International Nuclear Information System (INIS)

    Chubenko, E. B.; Redko, S. V.; Sherstnyov, A. I.; Petrovich, V. A.; Kotov, D. A.; Bondarenko, V. P.

    2016-01-01

    The influence of the surface layer on the process of the electrochemical deposition of metals and semiconductors into porous silicon is studied. It is shown that the surface layer differs in structure and electrical characteristics from the host porous silicon bulk. It is established that a decrease in the conductivity of silicon crystallites that form the surface layer of porous silicon has a positive effect on the process of the filling of porous silicon with metals and semiconductors. This is demonstrated by the example of nickel and zinc oxide. The effect can be used for the formation of nanocomposite materials on the basis of porous silicon and nanostructures with a high aspect ratio.

  2. Characterization of the porosity of silicon nitride thin layers by Electrochemical Impedance Spectroscopy

    International Nuclear Information System (INIS)

    Barrès, T.; Tribollet, B.; Stephan, O.; Montigaud, H.; Boinet, M.; Cohin, Y.

    2017-01-01

    Silicon nitride thin films are widely used as diffusion barriers within stacks in the glass industry but turn out to be porous at the nanometric scale. EIS measurements were conducted on SiNx thin layers deposited on a gold layer. An electrochemical model was established to fit the EIS measurements making use of data from other complementary techniques. In particular, Transmission Electron Microscopy was performed on these thin layers to determine the diameter and the qualitative morphology of the pores. A quantitative determination of the through-porosity of the layer was deduced from the EIS model and was in good agreement with TEM measurements. Moreover, combining EIS with local observations enabled inhomogeneities in the layer to be probed by highlighting a specific region in the layer.

  3. Atomic layer deposition of W - based layers on SiO2

    NARCIS (Netherlands)

    van Nieuwkasteele-Bystrova, Svetlana Nikolajevna; Holleman, J.; Wolters, Robertus A.M.; Aarnink, Antonius A.I.

    2003-01-01

    W and W1-xNx , where x= 15- 22 at%, thin films were grown using the ALD (Atomic Layer Deposition) principle. Growth rate of W films is about 4- 5 monolayers/ cycle at 300- 350 ºC. Growth rate of W1-xNx is 0.5 monolayer/cycle at 325- 350 ºC. Standard Deviation (STDV) of thickness is about 2%

  4. Density of states of adsorbed sulphur atoms on pristine and defective graphene layers

    International Nuclear Information System (INIS)

    Arellano, J S

    2017-01-01

    The density of states for adsorbed sulphur atom on a graphene layer system is discussed for pristine graphene layer and for mono and divacancies on the graphene layer. To our knowledge this is the first time that an entire adsorption of the sulphur atom is reported at the plane of the carbon atoms, when there is a pair of closer vacancies at the graphene layer. (paper)

  5. In situ AFM investigation of electrochemically induced surface-initiated atom-transfer radical polymerization.

    Science.gov (United States)

    Li, Bin; Yu, Bo; Zhou, Feng

    2013-02-12

    Electrochemically induced surface-initiated atom-transfer radical polymerization is traced by in situ AFM technology for the first time, which allows visualization of the polymer growth process. It affords a fundamental insight into the surface morphology and growth mechanism simultaneously. Using this technique, the polymerization kinetics of two model monomers were studied, namely the anionic 3-sulfopropyl methacrylate potassium salt (SPMA) and the cationic 2-(metharyloyloxy)ethyltrimethylammonium chloride (METAC). The growth of METAC is significantly improved by screening the ammonium cations by the addition of ionic liquid electrolyte in aqueous solution. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Core-shell structured ceramic nonwoven separators by atomic layer deposition for safe lithium-ion batteries

    Science.gov (United States)

    Shen, Xiu; Li, Chao; Shi, Chuan; Yang, Chaochao; Deng, Lei; Zhang, Wei; Peng, Longqing; Dai, Jianhui; Wu, Dezhi; Zhang, Peng; Zhao, Jinbao

    2018-05-01

    Safety is one of the most factors for lithium-ion batteries (LIBs). In this work, a novel kind of ceramic separator with high safety insurance is proposed. We fabricated the core-shell nanofiber separators for LIBs by atomic layer deposition (ALD) of 30 nm Al2O3 on the electrospinning nonwoven fiber of polyvinylidene fluoride-hexafluoropropylene (PVDF-HFP). The separators show a pretty high heat resistance up to 200 °C without any shrinkage, an excellent fire-resistant property and a wide electrochemical window. Besides, with higher uptake and ionic conductivity, cells assembled with the novel separator shows better electrochemical performance. The ALD produced separators exhibit great potential in elaborate products like 3C communications and in energy field with harsh requirements for safety such as electric vehicles. The application of ALD on polymer fiber membranes brings a new strategy and opportunity for improving the safety of the advanced LIBs.

  7. Efficient dual layer interconnect coating for high temperature electrochemical devices

    DEFF Research Database (Denmark)

    Palcut, Marián; Mikkelsen, Lars; Neufeld, Kai

    2012-01-01

    Effects of novel dual layer coatings Co3O4/La0.85Sr0.15MnO3−δ on high temperature oxidation behaviour of candidate steels for interconnects are studied at 1123 K in flowing simulated ambient air (air + 1% H2O) and oxygen. Four alloys are investigated: Crofer 22 APU, Crofer 22 H, E-Brite and AL 29...... that the oxidation reaction is limited by outward Cr3+ diffusion in the chromia scale. The coating effectively reduces the oxidation rate. Reactions and cation inter-diffusion between the coating and the oxide scale are observed. Long term effects of these interactions are discussed and practical implications...

  8. Atomic layer deposited oxide films as protective interface layers for integrated graphene transfer

    Science.gov (United States)

    Cabrero-Vilatela, A.; Alexander-Webber, J. A.; Sagade, A. A.; Aria, A. I.; Braeuninger-Weimer, P.; Martin, M.-B.; Weatherup, R. S.; Hofmann, S.

    2017-12-01

    The transfer of chemical vapour deposited graphene from its parent growth catalyst has become a bottleneck for many of its emerging applications. The sacrificial polymer layers that are typically deposited onto graphene for mechanical support during transfer are challenging to remove completely and hence leave graphene and subsequent device interfaces contaminated. Here, we report on the use of atomic layer deposited (ALD) oxide films as protective interface and support layers during graphene transfer. The method avoids any direct contact of the graphene with polymers and through the use of thicker ALD layers (≥100 nm), polymers can be eliminated from the transfer-process altogether. The ALD film can be kept as a functional device layer, facilitating integrated device manufacturing. We demonstrate back-gated field effect devices based on single-layer graphene transferred with a protective Al2O3 film onto SiO2 that show significantly reduced charge trap and residual carrier densities. We critically discuss the advantages and challenges of processing graphene/ALD bilayer structures.

  9. Revisiting the electrochemical impedance spectroscopy of magnesium with online inductively coupled plasma atomic emission spectroscopy.

    Science.gov (United States)

    Shkirskiy, Viacheslav; King, Andrew D; Gharbi, Oumaïma; Volovitch, Polina; Scully, John R; Ogle, Kevin; Birbilis, Nick

    2015-02-23

    The electrochemical impedance of reactive metals such as magnesium is often complicated by an obvious inductive loop with decreasing frequency of the AC polarising signal. The characterisation and ensuing explanation of this phenomenon has been lacking in the literature to date, being either ignored or speculated. Herein, we couple electrochemical impedance spectroscopy (EIS) with online atomic emission spectroelectrochemistry (AESEC) to simultaneously measure Mg-ion concentration and electrochemical impedance spectra during Mg corrosion, in real time. It is revealed that Mg dissolution occurs via Mg(2+) , and that corrosion is activated, as measured by AC frequencies less than approximately 1 Hz approaching DC conditions. The result of this is a higher rate of Mg(2+) dissolution, as the voltage excitation becomes slow enough to enable all Mg(2+) -enabling processes to adjust in real time. The manifestation of this in EIS data is an inductive loop. The rationalisation of such EIS behaviour, as it relates to Mg, is revealed for the first time by using concurrent AESEC. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Protective silicon coating for nanodiamonds using atomic layer deposition

    International Nuclear Information System (INIS)

    Lu, J.; Wang, Y.H.; Zang, J.B.; Li, Y.N.

    2007-01-01

    Ultrathin silicon coating was deposited on nanodiamonds using atomic layer deposition (ALD) from gaseous monosilane (SiH 4 ). The coating was performed by sequential reaction of SiH 4 saturated adsorption and in situ decomposition. X-ray diffraction (XRD) and transmission electron microscopy (TEM) were utilized to investigate the structural and morphological properties of the coating. Thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC) were used to compare the thermal stability of nanodiamonds before and after silicon coating. The results confirmed that the deposited cubic phase silicon coating was even and continuous. The protective silicon coating could effectively improve the oxidation resistance of nanodiamonds in air flow, which facilitates the applications of nanodiamonds that are commonly hampered by their poor thermal stability

  11. Protective silicon coating for nanodiamonds using atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lu, J. [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004 (China); College of Materials Science and Engineering, Yanshan University, Qinhuangdao, Hebei 066004 (China); Wang, Y.H. [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004 (China); College of Materials Science and Engineering, Yanshan University, Qinhuangdao, Hebei 066004 (China); Zang, J.B. [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004 (China) and College of Materials Science and Engineering, Yanshan University, Qinhuangdao, Hebei 066004 (China)]. E-mail: diamondzjb@163.com; Li, Y.N. [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004 (China); College of Materials Science and Engineering, Yanshan University, Qinhuangdao, Hebei 066004 (China)

    2007-01-30

    Ultrathin silicon coating was deposited on nanodiamonds using atomic layer deposition (ALD) from gaseous monosilane (SiH{sub 4}). The coating was performed by sequential reaction of SiH{sub 4} saturated adsorption and in situ decomposition. X-ray diffraction (XRD) and transmission electron microscopy (TEM) were utilized to investigate the structural and morphological properties of the coating. Thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC) were used to compare the thermal stability of nanodiamonds before and after silicon coating. The results confirmed that the deposited cubic phase silicon coating was even and continuous. The protective silicon coating could effectively improve the oxidation resistance of nanodiamonds in air flow, which facilitates the applications of nanodiamonds that are commonly hampered by their poor thermal stability.

  12. Atomic layer deposition overcoating: tuning catalyst selectivity for biomass conversion.

    Science.gov (United States)

    Zhang, Hongbo; Gu, Xiang-Kui; Canlas, Christian; Kropf, A Jeremy; Aich, Payoli; Greeley, Jeffrey P; Elam, Jeffrey W; Meyers, Randall J; Dumesic, James A; Stair, Peter C; Marshall, Christopher L

    2014-11-03

    The terraces, edges, and facets of nanoparticles are all active sites for heterogeneous catalysis. These different active sites may cause the formation of various products during the catalytic reaction. Here we report that the step sites of Pd nanoparticles (NPs) can be covered precisely by the atomic layer deposition (ALD) method, whereas the terrace sites remain as active component for the hydrogenation of furfural. Increasing the thickness of the ALD-generated overcoats restricts the adsorption of furfural onto the step sites of Pd NPs and increases the selectivity to furan. Furan selectivities and furfural conversions are linearly correlated for samples with or without an overcoating, though the slopes differ. The ALD technique can tune the selectivity of furfural hydrogenation over Pd NPs and has improved our understanding of the reaction mechanism. The above conclusions are further supported by density functional theory (DFT) calculations. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Highly reflective polymeric substrates functionalized utilizing atomic layer deposition

    Science.gov (United States)

    Zuzuarregui, Ana; Coto, Borja; Rodríguez, Jorge; Gregorczyk, Keith E.; Ruiz de Gopegui, Unai; Barriga, Javier; Knez, Mato

    2015-08-01

    Reflective surfaces are one of the key elements of solar plants to concentrate energy in the receivers of solar thermal electricity plants. Polymeric substrates are being considered as an alternative to the widely used glass mirrors due to their intrinsic and processing advantages, but optimizing both the reflectance and the physical stability of polymeric mirrors still poses technological difficulties. In this work, polymeric surfaces have been functionalized with ceramic thin-films by atomic layer deposition. The characterization and optimization of the parameters involved in the process resulted in surfaces with a reflection index of 97%, turning polymers into a real alternative to glass substrates. The solution we present here can be easily applied in further technological areas where seemingly incompatible combinations of polymeric substrates and ceramic coatings occur.

  14. Highly reflective polymeric substrates functionalized utilizing atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zuzuarregui, Ana, E-mail: a.zuzuarregui@nanogune.eu; Gregorczyk, Keith E. [CIC Nanogune Consolider, de Tolosa Hiribidea 76, 20018 San Sebastián (Spain); Coto, Borja; Ruiz de Gopegui, Unai; Barriga, Javier [IK4-Tekniker, Iñaki Goenaga 5, 20600 Eibar (Spain); Rodríguez, Jorge [Torresol Energy (SENER Group), Avda. de Zugazarte 61, 48930 Las Arenas (Spain); Knez, Mato [CIC Nanogune Consolider, de Tolosa Hiribidea 76, 20018 San Sebastián (Spain); IKERBASQUE Basque Foundation for Science, Maria Diaz de Haro 3, 48013 Bilbao (Spain)

    2015-08-10

    Reflective surfaces are one of the key elements of solar plants to concentrate energy in the receivers of solar thermal electricity plants. Polymeric substrates are being considered as an alternative to the widely used glass mirrors due to their intrinsic and processing advantages, but optimizing both the reflectance and the physical stability of polymeric mirrors still poses technological difficulties. In this work, polymeric surfaces have been functionalized with ceramic thin-films by atomic layer deposition. The characterization and optimization of the parameters involved in the process resulted in surfaces with a reflection index of 97%, turning polymers into a real alternative to glass substrates. The solution we present here can be easily applied in further technological areas where seemingly incompatible combinations of polymeric substrates and ceramic coatings occur.

  15. Highly reflective polymeric substrates functionalized utilizing atomic layer deposition

    International Nuclear Information System (INIS)

    Zuzuarregui, Ana; Gregorczyk, Keith E.; Coto, Borja; Ruiz de Gopegui, Unai; Barriga, Javier; Rodríguez, Jorge; Knez, Mato

    2015-01-01

    Reflective surfaces are one of the key elements of solar plants to concentrate energy in the receivers of solar thermal electricity plants. Polymeric substrates are being considered as an alternative to the widely used glass mirrors due to their intrinsic and processing advantages, but optimizing both the reflectance and the physical stability of polymeric mirrors still poses technological difficulties. In this work, polymeric surfaces have been functionalized with ceramic thin-films by atomic layer deposition. The characterization and optimization of the parameters involved in the process resulted in surfaces with a reflection index of 97%, turning polymers into a real alternative to glass substrates. The solution we present here can be easily applied in further technological areas where seemingly incompatible combinations of polymeric substrates and ceramic coatings occur

  16. Electrochemical Li Topotactic Reaction in Layered SnP3 for Superior Li-Ion Batteries

    Science.gov (United States)

    Park, Jae-Wan; Park, Cheol-Min

    2016-10-01

    The development of new anode materials having high electrochemical performances and interesting reaction mechanisms is highly required to satisfy the need for long-lasting mobile electronic devices and electric vehicles. Here, we report a layer crystalline structured SnP3 and its unique electrochemical behaviors with Li. The SnP3 was simply synthesized through modification of Sn crystallography by combination with P and its potential as an anode material for LIBs was investigated. During Li insertion reaction, the SnP3 anode showed an interesting two-step electrochemical reaction mechanism comprised of a topotactic transition (0.7-2.0 V) and a conversion (0.0-2.0 V) reaction. When the SnP3-based composite electrode was tested within the topotactic reaction region (0.7-2.0 V) between SnP3 and LixSnP3 (x ≤ 4), it showed excellent electrochemical properties, such as a high volumetric capacity (1st discharge/charge capacity was 840/663 mA h cm-3) with a high initial coulombic efficiency, stable cycle behavior (636 mA h cm-3 over 100 cycles), and fast rate capability (550 mA h cm-3 at 3C). This layered SnP3 anode will be applicable to a new anode material for rechargeable LIBs.

  17. Recent progress in layered double hydroxide based materials for electrochemical capacitors: design, synthesis and performance.

    Science.gov (United States)

    Zhao, Mingming; Zhao, Qunxing; Li, Bing; Xue, Huaiguo; Pang, Huan; Chen, Changyun

    2017-10-19

    As representative two-dimensional (2D) materials, layered double hydroxides (LDHs) have received increasing attention in electrochemical energy storage and conversion because of the facile tunability between their composition and morphology. The high dispersion of active species in layered arrays, the simple exfoliation into monolayer nanosheets and chemical modification offer the LDHs an opportunity as active electrode materials in electrochemical capacitors (ECs). LDHs are favourable in providing large specific surface areas, good transport features as well as attractive physicochemical properties. In this review, our purpose is to provide a detailed summary of recent developments in the synthesis and electrochemical performance of the LDHs. Their composites with carbon (carbon quantum dots, carbon black, carbon nanotubes/nanofibers, graphene/graphene oxides), metals (nickel, platinum, silver), metal oxides (TiO 2 , Co 3 O 4 , CuO, MnO 2 , Fe 3 O 4 ), metal sulfides/phosphides (CoS, NiCo 2 S 4 , NiP), MOFs (MOF derivatives) and polymers (PEDOT:PSS, PPy (polypyrrole), P(NIPAM-co-SPMA) and PET) are also discussed in this review. The relationship between structures and electrochemical properties as well as the associated charge-storage mechanisms is discussed. Moreover, challenges and prospects of the LDHs for high-performance ECs are presented. This review sheds light on the sustainable development of ECs with LDH based electrode materials.

  18. Electrochemical Deposition of Conformal and Functional Layers on High Aspect Ratio Silicon Micro/Nanowires.

    Science.gov (United States)

    Ozel, Tuncay; Zhang, Benjamin A; Gao, Ruixuan; Day, Robert W; Lieber, Charles M; Nocera, Daniel G

    2017-07-12

    Development of new synthetic methods for the modification of nanostructures has accelerated materials design advances to furnish complex architectures. Structures based on one-dimensional (1D) silicon (Si) structures synthesized using top-down and bottom-up methods are especially prominent for diverse applications in chemistry, physics, and medicine. Yet further elaboration of these structures with distinct metal-based and polymeric materials, which could open up new opportunities, has been difficult. We present a general electrochemical method for the deposition of conformal layers of various materials onto high aspect ratio Si micro- and nanowire arrays. The electrochemical deposition of a library of coaxial layers comprising metals, metal oxides, and organic/inorganic semiconductors demonstrate the materials generality of the synthesis technique. Depositions may be performed on wire arrays with varying diameter (70 nm to 4 μm), pitch (5 μ to 15 μ), aspect ratio (4:1 to 75:1), shape (cylindrical, conical, hourglass), resistivity (0.001-0.01 to 1-10 ohm/cm 2 ), and substrate orientation. Anisotropic physical etching of wires with one or more coaxial shells yields 1D structures with exposed tips that can be further site-specifically modified by an electrochemical deposition approach. The electrochemical deposition methodology described herein features a wafer-scale synthesis platform for the preparation of multifunctional nanoscale devices based on a 1D Si substrate.

  19. Improvement of oxidation resistance of copper by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chang, M.L.; Cheng, T.C. [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan (China); Lin, M.C. [Research Center for Biomedical Devices and Prototyping Production, Taipei Medical University, No. 250, Wu-Hsing Street, Taipei 110, Taiwan (China); Lin, H.C., E-mail: hclinntu@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan (China); Chen, M.J., E-mail: mjchen@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan (China)

    2012-10-01

    Graphical abstract: Results of glancing incident angle diffraction (GIXD) show the bare-Cu specimen was attacked by oxidation, whereas the coated-Cu specimens prevented from this problem. Highlights: Black-Right-Pointing-Pointer Deposition of Al{sub 2}O{sub 3} films on pure copper by an atomic layer deposition (ALD) technique. Black-Right-Pointing-Pointer Analysis of properties of the films coated at various substrate temperatures using the ALD technique. Black-Right-Pointing-Pointer Identification of the improvement of oxidation resistance of pure copper by the ALD-Al{sub 2}O{sub 3} films. Black-Right-Pointing-Pointer Assessment of the durability of the ALD-Al{sub 2}O{sub 3} films by adhesion strength. - Abstract: Al{sub 2}O{sub 3} films were deposited by the atomic layer deposition (ALD) technique onto pure copper at temperatures in the range 100-200 Degree-Sign C. The chemical composition, microstructure, and mechanic properties of the ALD-deposited Al{sub 2}O{sub 3} films were systematically analyzed. The variations in the film characteristics with substrate temperature were observed. Oxidation trials revealed that 20-nm-thick Al{sub 2}O{sub 3} films deposited at a substrate temperature as low as 100 Degree-Sign C suppress oxidative attack on pure copper. The Al{sub 2}O{sub 3} films also showed excellent durability of adhesion strength, according to predictions using the Coffin-Manson model based on the results of accelerated temperature cycling tests. These features indicate that ALD-deposited Al{sub 2}O{sub 3} film is a very promising candidate to be a protective coating for pure copper.

  20. Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cell

    Science.gov (United States)

    Mangasa Simanjuntak, Firman; Singh, Pragya; Chandrasekaran, Sridhar; Juanda Lumbantoruan, Franky; Yang, Chih-Chieh; Huang, Chu-Jie; Lin, Chun-Chieh; Tseng, Tseung-Yuen

    2017-12-01

    An engineering nanorod array in a ZnO-based electrochemical metallization device for nonvolatile memory applications was investigated. A hydrothermally synthesized nanorod layer was inserted into a Cu/ZnO/ITO device structure. Another device was fabricated without nanorods for comparison, and this device demonstrated a diode-like behavior with no switching behavior at a low current compliance (CC). The switching became clear only when the CC was increased to 75 mA. The insertion of a nanorods layer induced switching characteristics at a low operation current and improve the endurance and retention performances. The morphology of the nanorods may control the switching characteristics. A forming-free electrochemical metallization memory device having long switching cycles (>104 cycles) with a sufficient memory window (103 times) for data storage application, good switching stability and sufficient retention was successfully fabricated by adjusting the morphology and defect concentration of the inserted nanorod layer. The nanorod layer not only contributed to inducing resistive switching characteristics but also acted as both a switching layer and a cation diffusion control layer.

  1. Layer-by-Layer Motif Architectures: Programmed Electrochemical Syntheses of Multilayer Mesoporous Metallic Films with Uniformly Sized Pores.

    Science.gov (United States)

    Jiang, Bo; Li, Cuiling; Qian, Huayu; Hossain, Md Shahriar A; Malgras, Victor; Yamauchi, Yusuke

    2017-06-26

    Although multilayer films have been extensively reported, most compositions have been limited to non-catalytically active materials (e.g. polymers, proteins, lipids, or nucleic acids). Herein, we report the preparation of binder-free multilayer metallic mesoporous films with sufficient accessibility for high electrocatalytic activity by using a programmed electrochemical strategy. By precisely tuning the deposition potential and duration, multilayer mesoporous architectures consisting of alternating mesoporous Pd layers and mesoporous PdPt layers with controlled layer thicknesses can be synthesized within a single electrolyte, containing polymeric micelles as soft templates. This novel architecture, combining the advantages of bimetallic alloys, multilayer architectures, and mesoporous structures, exhibits high electrocatalytic activity for both the methanol oxidation reaction (MOR) and the ethanol oxidation reaction (EOR). © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Scalable synthesis of palladium nanoparticle catalysts by atomic layer deposition

    International Nuclear Information System (INIS)

    Liang Xinhua; Lyon, Lauren B.; Jiang Yingbing; Weimer, Alan W.

    2012-01-01

    Atomic layer deposition (ALD) was used to produce Pd/Al 2 O 3 catalysts using sequential exposures of Pd(II) hexafluoroacetylacetonate and formalin at 200 °C in a fluidized bed reactor. The ALD-prepared Pd/alumina catalysts were characterized by various methods including hydrogen chemisorption, XPS, and TEM, and compared with a commercially available 1 wt% Pd/alumina catalyst, which was also characterized. The content of Pd on alumina support and the size of Pd nanoparticles can be controlled by the number of ALD-coating cycles and the dose time of the Pd precursor. One layer of organic component from the Pd precursor remained on the Pd particle surface. The ALD 0.9 wt% Pd/alumina had greater active metal surface area and percent metal dispersion than the commercial 1 wt% Pd/alumina catalyst. The ALD and commercial catalysts were subjected to catalytic testing to determine their relative activities for glucose oxidation to gluconic acid in aqueous solution. The ALD 0.9 wt% Pd/alumina catalyst had comparable activity as compared to the commercial 1 wt% Pd catalyst. No noticeable amount of Pd leaching was observed for the ALD-prepared catalysts during the vigorously stirred reaction.

  3. Atomic layer deposition of TiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Tallarida, Massimo; Dessmann, Nils; Staedter, Matthias; Friedrich, Daniel; Michling, Marcel; Schmeisser, Dieter [BTU-Cottbus, Konrad-Wachsmann-Allee 17, 03046 Cottbus (Germany)

    2011-07-01

    We present a study of the initial growth of TiO{sub 2} on Si(111) by atomic layer deposition (ALD). The Si substrate was etched with NH{sub 4}F before ALD to remove the native oxide film and to produce a Si-H termination. In-situ experiments by means of photoemission and X-ray absorption spectroscopy were conducted with synchrotron radiation on Ti-oxide films produced using Ti-tetra-iso-propoxide (TTIP) and water as precursors. O 1s, Ti 2p, C 1s, and S i2p core level, and O 1s and Ti 2p absorption edges show the transition of the Ti-oxide properties during the first layers. The growth starts with a very small growth rate (0.03 nm/cycle) due to the growth inhibition of the Si-H termination and proceeds with higher growth rate (0.1 nm/cycle) after 1.5 nm Ti-oxide has been deposited.

  4. Engineering Particle Surface Chemistry and Electrochemistry with Atomic Layer Deposition

    Science.gov (United States)

    Jackson, David Hyman Kentaro

    Atomic layer deposition (ALD) is a vapor phase thin film coating technique that relies on sequential pulsing of precursors that undergo self-limited surface reactions. The self- limiting reactions and gas phase diffusion of the precursors together enable the conformal coating of microstructured particles with a high degree of thickness and compositional control. ALD may be used to deposit thin films that introduce new functionalities to a particle surface. Examples of new functionalities include: chemical reactivity, a mechanically strong protective coating, and an electrically resistive layer. The coatings properties are often dependent on the bulk properties and microstructure of the particle substrate, though they usually do not affect its bulk properties or microstructure. Particle ALD finds utility in the ability to synthesize well controlled, model systems, though it is expensive due to the need for costly metal precursors that are dangerous and require special handling. Enhanced properties due to ALD coating of particles in various applications are frequently described empirically, while the details of their enhancement mechanisms often remain the focus of ongoing research in the field. This study covers the various types of particle ALD and attempts to describe them from the unifying perspective of surface science.

  5. Macro-mechanics controls quantum mechanics: mechanically controllable quantum conductance switching of an electrochemically fabricated atomic-scale point contact

    Science.gov (United States)

    Staiger, Torben; Wertz, Florian; Xie, Fangqing; Heinze, Marcel; Schmieder, Philipp; Lutzweiler, Christian; Schimmel, Thomas

    2018-01-01

    Here, we present a silver atomic-scale device fabricated and operated by a combined technique of electrochemical control (EC) and mechanically controllable break junction (MCBJ). With this EC-MCBJ technique, we can perform mechanically controllable bistable quantum conductance switching of a silver quantum point contact (QPC) in an electrochemical environment at room temperature. Furthermore, the silver QPC of the device can be controlled both mechanically and electrochemically, and the operating mode can be changed from ‘electrochemical’ to ‘mechanical’, which expands the operating mode for controlling QPCs. These experimental results offer the perspective that a silver QPC may be used as a contact for a nanoelectromechanical relay.

  6. Atomic Layer Deposition to Enable the Production, Optimization and Protection of Spaceflight Hardware

    Data.gov (United States)

    National Aeronautics and Space Administration — Atomic Layer Deposition (ALD) a cost effective nano-manufacturing technique allows for the conformal coating of substrates with atomic control in a benign...

  7. Atomic Layer Deposition to Enable the Production, Optimization and Protection of Spaceflight Hardware Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Atomic Layer Deposition (ALD) a cost effective nano-manufacturing technique allows for the conformal coating of substrates with atomic control in a benign...

  8. Electrochemical deposition and characterization of platinum on carbon paper and Ni foam

    CSIR Research Space (South Africa)

    Louw, E

    2013-04-01

    Full Text Available There are various methods used to prepare fuel cell (FC) catalysts. The electrochemical deposition method is well known for the fabrication of nanostructured catalysts for energy materials. Electrochemical atomic layer deposition (ECALD) method...

  9. Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Briggs, B.D.; Bishop, S.M. [SUNY College of Nanoscale Science and Engineering, 255 Fuller Road, Albany, NY 12203 (United States); Leedy, K.D. [Air Force Research Laboratory, 2241 Avionics Circle, Wright Patterson Air Force Base, Dayton, OH 45433 (United States); Cady, N.C., E-mail: ncady@albany.edu [SUNY College of Nanoscale Science and Engineering, 255 Fuller Road, Albany, NY 12203 (United States)

    2014-07-01

    Hafnium oxide-based resistive memory devices have been fabricated on copper bottom electrodes. The HfO{sub x} active layers in these devices were deposited by atomic layer deposition (ALD) at 250 °C with tetrakis(dimethylamido)hafnium(IV) as the metal precursor and an O{sub 2} plasma as the reactant. Depth profiles of the HfO{sub x} by X-ray photoelectron spectroscopy and secondary ion mass spectroscopy revealed a copper concentration on the order of five atomic percent throughout the HfO{sub x} film. In addition to the Cu doped HfO{sub x}, a thin layer (20 nm) of Cu{sub x}O is present at the surface. This surface layer is believed to have formed during the ALD process, and greatly complicates the analysis of the switching mechanism. The resistive memory structures fabricated from the ALD HfO{sub x} exhibited non-polar resistive switching, independent of the top metal electrode (Ni, Pt, Al, Au). Resistive switching current voltage (I–V) curves were analyzed using Schottky emission and ionic hopping models to gain insight into the physical mechanisms underpinning the device behavior. During the forming process it was determined that, at voltages in excess of 2.5 V, an ionic hopping model is in good agreement with the I–V data. The extracted ion hopping distance ∼ 4 Å was within the range of interatomic spacing of HfO{sub 2} during the forming process consistent with ionic motion of Cu{sup 2+} ions. Lastly the on state I–V data was dominated at larger voltages by Schottky emission with an estimated barrier height of ∼ 0.5 eV and a refractive index of 2.59. The consequence of the Schottky emission analysis indicates the on state resistance to be a product of a Pt/Cu{sub 2}O/Cu filament(s)/Cu{sub 2}O/Cu structure. - Highlights: • HfO{sub 2} was grown via atomic layer deposition at 250 and 100 °C on Cu substrates. • A Cu{sub 2}O surface layer and Cu doping were observed in post-deposition of HfO{sub 2}. • Resistive memory devices were fabricated and

  10. Refined tip preparation by electrochemical etching and ultrahigh vacuum treatment to obtain atomically sharp tips for scanning tunneling microscope and atomic force microscope.

    Science.gov (United States)

    Hagedorn, Till; El Ouali, Mehdi; Paul, William; Oliver, David; Miyahara, Yoichi; Grütter, Peter

    2011-11-01

    A modification of the common electrochemical etching setup is presented. The described method reproducibly yields sharp tungsten tips for usage in the scanning tunneling microscope and tuning fork atomic force microscope. In situ treatment under ultrahigh vacuum (p ≤10(-10) mbar) conditions for cleaning and fine sharpening with minimal blunting is described. The structure of the microscopic apex of these tips is atomically resolved with field ion microscopy and cross checked with field emission. © 2011 American Institute of Physics

  11. Refined tip preparation by electrochemical etching and ultrahigh vacuum treatment to obtain atomically sharp tips for scanning tunneling microscope and atomic force microscope

    International Nuclear Information System (INIS)

    Hagedorn, Till; Ouali, Mehdi El; Paul, William; Oliver, David; Miyahara, Yoichi; Gruetter, Peter

    2011-01-01

    A modification of the common electrochemical etching setup is presented. The described method reproducibly yields sharp tungsten tips for usage in the scanning tunneling microscope and tuning fork atomic force microscope. In situ treatment under ultrahigh vacuum (p ≤10 -10 mbar) conditions for cleaning and fine sharpening with minimal blunting is described. The structure of the microscopic apex of these tips is atomically resolved with field ion microscopy and cross checked with field emission.

  12. Electrochemical Corrosion Behavior of Oxidation Layer on Fe30Mn5Al Alloy

    Directory of Open Access Journals (Sweden)

    ZHU Xue-mei

    2017-08-01

    Full Text Available The Fe30Mn5Al alloy was oxidized at 800℃ in air for 160h, the oxidation-induced layer about 15μm thick near the scale-metal interface was induced to transform to ferrite and become enriched in Fe and depletion in Mn. The effect of the oxidation-induced Mn depletion layer on the electrochemical corrosion behavior of Fe30Mn5Al alloy was evaluated. The results show that in 1mol·L-1 Na2SO4 solution, the anodic polarization curve of the Mn depletion layer exhibits self-passivation, compared with Fe30Mn5Al austenitic alloy, and the corrosion potential Evs SCE is increased to -130mV from -750mV and the passive current density ip is decreased to 29μA/cm2 from 310μA/cm2. The electrochemical impedance spectroscopy(EIS of the Mn depletion layer has the larger diameter of capacitive arc, the higher impedance modulus|Z|, and the wider phase degree range, and the fitted polarization resistant Rt is increased to 9.9kΩ·cm2 from 2.7kΩ·cm2 by using an equivalent electric circuit of Rs-(Rt//CPE. The high insulation of the Mn depletion layer leads to an improved corrosion resistance of Fe30Mn5Al austenitic alloy.

  13. Structures and electrochemical performances of pyrolized carbons from graphite oxides for electric double-layer capacitor

    Science.gov (United States)

    Kim, Ick-Jun; Yang, Sunhye; Jeon, Min-Je; Moon, Seong-In; Kim, Hyun-Soo; Lee, Yoon-Pyo; An, Kye-Hyeok; Lee, Young-Hee

    The structural features and the electrochemical performances of pyrolized needle cokes from oxidized cokes are examined and compared with those of KOH-activated needle coke. The structure of needle coke is changed to a single phase of graphite oxide after oxidation treatment with an acidic solution having an NaClO 3/needle coke composition ratio of above 7.5, and the inter-layer distance of the oxidized needle coke is expanded to 6.9 Å with increasing oxygen content. After heating at 200 °C, the oxidized needle coke is reduced to a graphite structure with an inter-layer distance of 3.6 Å. By contrast, a change in the inter-layer distance in KOH-activated needle coke is not observed. An intercalation of pyrolized needle coke, observed on first charge, occurs at 1.0 V. This value is lower than that of KOH-activation needle coke. A capacitor using pyrolized needle coke exhibits a lower internal resistance of 0.57 Ω in 1 kHz, and a larger capacitance per weight and volume of 30.3 F g -1 and 26.9 F ml -1, in the two-electrode system over the potential range 0-2.5 V compared with those of a capacitor using KOH-activation of needle coke. This better electrochemical performance is attributed to a distorted graphene layer structure derived from the process of the inter-layer expansion and shrinkage.

  14. Microstructural and electrochemical characterization of environmentally friendly conversion layers on aluminium alloys

    Directory of Open Access Journals (Sweden)

    Palomino Luis Enrique M.

    2003-01-01

    Full Text Available Cerium conversion layers (CeCL have been investigated as a replacement for chromium conversion layers to protect Al alloys against corrosion. In this work the microstructure and the electrochemical behaviour of aluminium alloy 2024 with and without CeCL were investigated using, respectively, SEM-EDX and EIS. EDX results have shown that the presence of dispersed plated Cu particles on the alloy surface enhances the formation of the CeCL increasing the intensity of Ce peaks in the EDX spectra. EIS measurements on conversion-coated samples have shown that the presence of the layer increases the impedance, and that its presence is detected by the presence of a high frequency time constant. Results of potentiodynamic experiments have shown that the corrosion protection afforded by the conversion layer is due to the hindrance of the oxygen reduction reaction and that the pitting potential of the alloy is not changed.

  15. Visualization of arrangements of carbon atoms in graphene layers by Raman mapping and atomic-resolution TEM

    KAUST Repository

    Cong, Chunxiao; Li, Kun; Zhang, Xixiang; Yu, Ting

    2013-01-01

    In-plane and out-of-plane arrangements of carbon atoms in graphene layers play critical roles in the fundamental physics and practical applications of these novel two-dimensional materials. Here, we report initial results on the edge

  16. Inert Layered Silicate Improves the Electrochemical Responses of a Metal Complex Polymer.

    Science.gov (United States)

    Eguchi, Miharu; Momotake, Masako; Inoue, Fumie; Oshima, Takayoshi; Maeda, Kazuhiko; Higuchi, Masayoshi

    2017-10-11

    A chemically inert, insulating layered silicate (saponite; SP) and an iron(II)-based metallo-supramolecular complex polymer (polyFe) were combined via electrostatic attraction to improve the electrochromic properties of polyFe. Structural characterization indicated that polyFe was intercalated into the SP nanosheets. Interestingly, the redox potential of polyFe was lowered by combining it with SP, and the current was measurable despite the insulating nature of SP. X-ray photoelectron spectroscopy showed that the decrease in the redox potential observed in the SP-polyFe hybrid was caused by the electrostatic neutralization of the Fe cation in polyFe by the negative charge on SP. Electrochemical analyses indicated that electron transfer occurred through electron hopping across the SP-polyFe hybrid. Control experiments using a metal complex composed of Fe and two 2,2':6',2''-terpyridine ligands (terpyFe) showed that SP contributes to the effective electron hopping. This modulation of the electrochemical properties by the layered silicates could be applied to other electrochemical systems, including hybrids of the redox-active ionic species and ion-exchangeable adsorbents.

  17. Solvothermal synthesis of Li–Al layered double hydroxides and their electrochemical performance

    International Nuclear Information System (INIS)

    Wei, Jinbo; Gao, Zan; Song, Yanchao; Yang, Wanlu; Wang, Jun; Li, Zhanshuang; Mann, Tom; Zhang, Milin; Liu, Lianhe

    2013-01-01

    In this paper, for the first time, Li/Al layered double hydroxides (LDHs) were synthesized by a facile and environment-friendly solvothermal approach. X-ray diffraction patterns show that the as-prepared products belong to the hexagonal phase. Well-defined LDHs particles with spiral-shape (1–2 μm), hexagonal (2–3 μm) and petal-like structures (10–15 μm) have been successfully fabricated by adjusting the content of water/ethanol in the synthesis process. A possible growth mechanism was proposed for the formation of these structures. Their electrochemical performances were investigated by cyclic voltammetry, galvanostatic charge/discharge test and electrochemical impedance spectroscopy. The hexagonal Li/Al LDHs calcined at 450 °C exhibit the specific capacitance of 848 F g −1 at a current density of 1.25 A g −1 . The high specific capacitance and remarkable rate capacity of Li/Al LDHs are promising for applications in capacitors and low-cost aqueous lithium ion batteries. - Graphical abstract: Hexagonal Li/Al layered double hydroxides (LDHs) with high specific surface area and remarkable rate capacity via a facile and environmentally friendly solvothermal approach. Highlights: ► Li/Al LDHs with different morphologies were fabricated by a solvothermal method. ► Hexagonal Li/Al LDHs display better electrochemical performance. ► A possible growth mechanism to explain the different morphology is proposed

  18. Method of forming a plasma sprayed interconnection layer on an electrode of an electrochemical cell

    Science.gov (United States)

    Spengler, Charles J.; Folser, George R.; Vora, Shailesh D.; Kuo, Lewis; Richards, Von L.

    1995-01-01

    A dense, substantially gas-tight, electrically conductive interconnection layer is formed on an air electrode structure of an electrochemical cell by (A) providing an electrode surface; (B) forming on a selected portion of the electrode surface, a layer of doped LaCrO.sub.3 particles doped with an element selected from Ca, Sr, Ba, Mg, Co, Ni, Al and mixtures thereof by plasma spraying doped LaCrO.sub.3 powder, preferably compensated with chromium as Cr.sub.2 O.sub.3 and/or dopant element, preferably by plasma arc spraying; and, (C) heating the doped and compensated LaCrO.sub.3 layer to about 1100.degree. C. to 1300.degree. C. to provide a dense, substantially gas-tight, substantially hydration-free, electrically conductive interconnection material bonded to the electrode surface. A solid electrolyte layer can be applied to the unselected portion of the air electrode, and a fuel electrode can be applied to the solid electrolyte, to provide an electrochemical cell.

  19. Recent progress of atomic layer deposition on polymeric materials

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Hong Chen; Ye, Enyi [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, #08-03, Singapore 138634 (Singapore); Li, Zibiao, E-mail: lizb@imre.a-star.edu.sg [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, #08-03, Singapore 138634 (Singapore); Han, Ming-Yong [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, #08-03, Singapore 138634 (Singapore); Loh, Xian Jun, E-mail: lohxj@imre.a-star.edu.sg [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, #08-03, Singapore 138634 (Singapore); Department of Materials Science and Engineering, National University of Singapore, Singapore 117574 (Singapore); Singapore Eye Research Institute, 20 College Road, Singapore 169856 (Singapore)

    2017-01-01

    As a very promising surface coating technology, atomic layer deposition (ALD) can be used to modify the surfaces of polymeric materials for improving their functions and expanding their application areas. Polymeric materials vary in surface functional groups (number and type), surface morphology and internal structure, and thus ALD deposition conditions that typically work on a normal solid surface, usually do not work on a polymeric material surface. To date, a large variety of research has been carried out to investigate ALD deposition on various polymeric materials. This paper aims to provide an in-depth review of ALD deposition on polymeric materials and its applications. Through this review, we will provide a better understanding of surface chemistry and reaction mechanism for controlled surface modification of polymeric materials by ALD. The integrated knowledge can aid in devising an improved way in the reaction between reactant precursors and polymer functional groups/polymer backbones, which will in turn open new opportunities in processing ALD materials for better inorganic/organic film integration and potential applications. - Highlights: • ALD deposition on different natural and synthetic polymer materials • Reaction mechanism based on the surface functional groups of polymers • Application of ALD-modified polymers in different fields.

  20. Continuous production of nanostructured particles using spatial atomic layer deposition

    International Nuclear Information System (INIS)

    Ommen, J. Ruud van; Kooijman, Dirkjan; Niet, Mark de; Talebi, Mojgan; Goulas, Aristeidis

    2015-01-01

    In this paper, the authors demonstrate a novel spatial atomic layer deposition (ALD) process based on pneumatic transport of nanoparticle agglomerates. Nanoclusters of platinum (Pt) of ∼1 nm diameter are deposited onto titania (TiO 2 ) P25 nanoparticles resulting to a continuous production of an active photocatalyst (0.12–0.31 wt. % of Pt) at a rate of about 1 g min −1 . Tuning the precursor injection velocity (10–40 m s −1 ) enhances the contact between the precursor and the pneumatically transported support flows. Decreasing the chemisorption temperature (from 250 to 100 °C) results in more uniform distribution of the Pt nanoclusters as it decreases the reaction rate as compared to the rate of diffusion into the nanoparticle agglomerates. Utilizing this photocatalyst in the oxidation reaction of Acid Blue 9 showed a factor of five increase of the photocatalytic activity compared to the native P25 nanoparticles. The use of spatial particle ALD can be further expanded to deposition of nanoclusters on porous, micron-sized particles and to the production of core–shell nanoparticles enabling the robust and scalable manufacturing of nanostructured powders for catalysis and other applications

  1. Inductively coupled plasma nanoetching of atomic layer deposition alumina

    DEFF Research Database (Denmark)

    Han, Anpan; Chang, Bingdong; Todeschini, Matteo

    2018-01-01

    such as silicon dioxide, silicon nitride, and diamond. In this report, we systematically study nanoscale plasma etching of Al2O3 with electron beam lithography and deep UV resist masks. The gas composition and pressure were tuned for optimal etching, and redeposition conditions were mapped. With a BCl3 and Ar...... the resist profile angle. For Al2O3 patterned with deep UV lithography, the smallest structures were 220 nm. For electron beam lithography patterns, the smallest gratings were 18-nm-wide with 50-nm-pitch. Using alumina as a hard mask, we show aspect ratio of 7-10 for subsequent silicon plasma etching, and we......Al2O3 thin-film deposited by atomic layer deposition is an attractive plasma etch mask for Micro and Nano Electro-Mechanical Systems (MEMS and NEMS). 20-nm-thick Al2O3 mask enables through silicon wafer plasma etching. Al2O3 is also an excellent etch mask for other important MEMS materials...

  2. Robust, functional nanocrystal solids by infilling with atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yao; Gibbs, Markelle; Perkins, Craig L.; Tolentino, Jason; Zarghami, Mohammad H.; Bustamante, Jr., J.; Law, Matt

    2011-12-14

    Thin films of colloidal semiconductor nanocrystals (NCs) are inherently metatstable materials prone to oxidative and photothermal degradation driven by their large surface-to-volume ratios and high surface energies. The fabrication of practical electronic devices based on NC solids hinges on preventing oxidation, surface diffusion, ripening, sintering, and other unwanted physicochemical changes that can plague these materials. Here we use low-temperature atomic layer deposition (ALD) to infill conductive PbSe NC solids with metal oxides to produce inorganic nanocomposites in which the NCs are locked in place and protected against oxidative and photothermal damage. Infilling NC field-effect transistors and solar cells with amorphous alumina yields devices that operate with enhanced and stable performance for at least months in air. Furthermore, ALD infilling with ZnO lowers the height of the inter-NC tunnel barrier for electron transport, yielding PbSe NC films with electron mobilities of 1 cm² V-1 s-1. Our ALD technique is a versatile means to fabricate robust NC solids for optoelectronic devices.

  3. Deposition of yttrium oxysulfide thin films by atomic layer epitaxy

    International Nuclear Information System (INIS)

    Kukli, K.; University of Tartu, Tartu,; Johansson, L-S.; Nykaenen, E.; Peussa, M.; Ninistoe, L.

    1998-01-01

    Full text: Yttrium oxysulfide is a highly interesting material for optoelectronic applications. It is industrially exploited in the form of doped powder in catholuminescent phosphors, e.g. Y 2 O 2 S: Eu 3+ for colour TV. Attempts to grow thin films of Y 2 O 2 S have not been frequent and only partially successful due to the difficulties in obtaining crystalline films at a reasonable temperature. Furthermore, sputtering easily leads to a sulphur deficiency. Evaporation of the elements from a multi-source offers a better control of the stoichiometry resulting in hexagonal (0002) oriented films at 580 deg C. In this paper we present the first successful thin film growth experiments using a chemical process with molecular precursors. Atomic layer epitaxy (ALE) allows the use of a relatively low deposition temperature and thus compatibility with other technologies. Already at 425 deg C the reaction between H 2 S and Y(thd) 3 (thd = 2,2,6,6 - tetramethyl-heptane-3,5- dione) yields a crystalline Y 2 O 2 S thin film which was characterized by XRD, XRF and XPS

  4. Atomic Layer Deposition in Bio-Nanotechnology: A Brief Overview.

    Science.gov (United States)

    Bishal, Arghya K; Butt, Arman; Selvaraj, Sathees K; Joshi, Bela; Patel, Sweetu B; Huang, Su; Yang, Bin; Shukohfar, Tolou; Sukotjo, Cortino; Takoudis, Christos G

    2015-01-01

    Atomic layer deposition (ALD) is a technique increasingly used in nanotechnology and ultrathin film deposition; it is ideal for films in the nanometer and Angstrom length scales. ALD can effectively be used to modify the surface chemistry and functionalization of engineering-related and biologically important surfaces. It can also be used to alter the mechanical, electrical, chemical, and other properties of materials that are increasingly used in biomedical engineering and biological sciences. ALD is a relatively new technique for optimizing materials for use in bio-nanotechnology. Here, after a brief review of the more widely used modes of ALD and a few of its applications in biotechnology, selected results that show the potential of ALD in bio-nanotechnology are presented. ALD seems to be a promising means for tuning the hydrophilicity/hydrophobicity characteristics of biomedical surfaces, forming conformal ultrathin coatings with desirable properties on biomedical substrates with a high aspect ratio, tuning the antibacterial properties of substrate surfaces of interest, and yielding multifunctional biomaterials for medical implants and other devices.

  5. Atomic-Layer-Deposited Transparent Electrodes for Silicon Heterojunction Solar Cells

    International Nuclear Information System (INIS)

    Demaurex, Benedicte; Seif, Johannes P.; Smit, Sjoerd; Macco, Bart; Kessels, W. M.; Geissbuhler, Jonas; De Wolf, Stefaan; Ballif, Christophe

    2014-01-01

    We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered transparent electrodes, the deposition of which may damage the layers underneath. Using atomic layer deposition, we insert thin protective films between the amorphous silicon layers and sputtered contacts and investigate their effect on device operation. We find that a 20-nm-thick protective layer suffices to preserve, unchanged, the amorphous silicon layers beneath. Insertion of such protective atomic-layer-deposited layers yields slightly higher internal voltages at low carrier injection levels. However, we identify the presence of a silicon oxide layer, formed during processing, between the amorphous silicon and the atomic-layer-deposited transparent electrode that acts as a barrier, impeding hole and electron collection

  6. Study of Cu2O\\ZnO nanowires heterojunction designed by combining electrodeposition and atomic layer deposition

    Science.gov (United States)

    Makhlouf, Houssin; Weber, Matthieu; Messaoudi, Olfa; Tingry, Sophie; Moret, Matthieu; Briot, Olivier; Chtoutou, Radhouane; Bechelany, Mikhael

    2017-12-01

    Cu2O/ZnO nanowires (NWs) heterojunctions were successfully prepared by combining Atomic layer Deposition (ALD) and Electrochemical Deposition (ECD) processes. The crystallinity, morphology and photoconductivity properties of the Cu2O/ZnO nanostructures have been investigated. The properties of the Cu2O absorber layer and the nanostructured heterojunction were studied in order to understand the mechanisms lying behind the low photoconductivity measured. It has been found that the interface state defects and the high resistivity of Cu2O film were limiting the photovoltaic properties of the prepared devices. The understanding presented in this work is expected to enable the optimization of solar cell devices based on Cu2O/ZnO nanomaterials and improve their overall performance.

  7. Recent advances in polymer supporting layered double hydroxides nanocomposite for electrochemical biosensors

    Science.gov (United States)

    Dhanasekaran, T.; Padmanaban, A.; Gnanamoorthy, G.; Manigandan, R.; Praveen Kumar, S.; Stephen, A.; Narayanan, V.

    2018-01-01

    In recent years, layered double hydroxides (LDHs) materials having emerging due to their ability of intercalate a variety of anions, either organic or inorganic molecules. The most significance of the LDHs has been found potential applications in catalysis, wastewater treatment, and electrochemical sensors. The Mg-Al LDHs (MAL) and Poly-o-phenylenediamine @ Mg-Al LDHs (P-MAL) was prepared via simple one step hydrothermal method. As prepared material was characterized using many techniques such as, the structural and crystal phase was determined from XRD and Raman analyses. The functional groups were depicted using FT-IR spectroscopy. The optical propertied studied using diffuse reflectance spectroscopy UV-vis spectroscopy and the emission property were analyzed from Photoluminescence spectroscopy. The surface morphology and average particle size was analyzed using FESEM microscopy. The prepared polymer composite material P-MAL was further used for highly sensitive electrochemical detection towards dopamine (DA).

  8. Performance of Liquid Phase Exfoliated Graphene As Electrochemical Double Layer Capacitors Electrodes

    Science.gov (United States)

    Huffstutler, Jacob; Wasala, Milinda; Richie, Julianna; Winchester, Andrew; Ghosh, Sujoy; Kar, Swastik; Talapatra, Saikat

    2014-03-01

    We will present the results of our investigations of electrochemical double layer capacitors (EDLCs) or supercapacitors (SC) fabricated using liquid-phase exfoliated graphene. Several electrolytes, such as aqueous potassium hydroxide KOH (6M), ionic 1-Butyl-3-methylimidazolium hexafluorophosphate [BMIM][PF6], and ionic 1-butyl-1-methylpyrrolidinium tris(pentafluoroethyl)trifluorophosphate[BMP][FAP] were used. These EDLC's show good performance compared to other carbon nanomaterials based EDLC's devices. We found that the liquid phase exfoliated graphene based devices possess specific capacitance values as high as 262 F/g, when used with ionic liquid electrolyte[BMP][FAP], with power densities (~ 454 W/kg) and energy densities (~ 0.38Wh/kg). Further, these devices indicated rapid charge transfer response even without the use of any binders or specially prepared current collectors. A detailed electrochemical impedance spectroscopy analysis in order to understand the phenomenon of charge storage in these materials will be presented.

  9. Photoelectrochemical Water Oxidation by GaAs Nanowire Arrays Protected with Atomic Layer Deposited NiO x Electrocatalysts

    Science.gov (United States)

    Zeng, Joy; Xu, Xiaoqing; Parameshwaran, Vijay; Baker, Jon; Bent, Stacey; Wong, H.-S. Philip; Clemens, Bruce

    2018-02-01

    Photoelectrochemical (PEC) hydrogen production makes possible the direct conversion of solar energy into chemical fuel. In this work, PEC photoanodes consisting of GaAs nanowire (NW) arrays were fabricated, characterized, and then demonstrated for the oxygen evolution reaction (OER). Uniform and periodic GaAs nanowire arrays were grown on a heavily n-doped GaAs substrates by metal-organic chemical vapor deposition selective area growth. The nanowire arrays were characterized using cyclic voltammetry and impedance spectroscopy in a non-aqueous electrochemical system using ferrocene/ferrocenium (Fc/Fc+) as a redox couple, and a maximum oxidation photocurrent of 11.1 mA/cm2 was measured. GaAs NW arrays with a 36 nm layer of nickel oxide (NiO x ) synthesized by atomic layer deposition were then used as photoanodes to drive the OER. In addition to acting as an electrocatalyst, the NiO x layer served to protect the GaAs NWs from oxidative corrosion. Using this strategy, GaAs NW photoanodes were successfully used for the oxygen evolution reaction. This is the first demonstration of GaAs NW arrays for effective OER, and the fabrication and protection strategy developed in this work can be extended to study any other nanostructured semiconductor materials systems for electrochemical solar energy conversion.

  10. Electrochemical synthesis of birnessite-type layered manganese oxides for rechargeable lithium batteries

    Science.gov (United States)

    Nakayama, Masaharu; Kanaya, Taku; Lee, Jong-Won; Popov, Branko N.

    Layered manganese dioxide (MnO 2) films intercalated with Li +, Na + or Mg 2+ ions were synthesized by a one-step electrochemical method. The electrodeposition was potentiostatically performed by applying an anodic potential of 1.0 V vs. Ag/AgCl in an aqueous MnSO 4 solution containing a perchlorate salt of the cation. The electrodeposited oxide films have a birnessite-type layered structure with alkali cations and water molecules between manganese oxide layers. The galvanostatic charge-discharge experiments performed in 1 M LiPF 6-DME/PC solution indicated that the Mg 2+-intercalated MnO 2 electrode exhibits an initial discharge capacity as large as 140 mAh g -1 and it shows a better capacity retention during cycling as compared with the Li +- or Na +-intercalated MnO 2 electrode.

  11. Electrochemical fabrication and modelling of mechanical behavior of a tri-layer polymer actuator

    International Nuclear Information System (INIS)

    Kaynak, Akif; Yang Chunhui; Lim, Yang C.; Kouzani, Abbas

    2011-01-01

    Stability and performance of electrochemically synthesized tri-layer polypyrrole based actuators were reported. Concentrations were optimized as 0.05 M pyrrole and 0.05 M tetrabutylammonium hexaflurophosphate in propylene carbonate (PC). The force output of the actuators ranged from 0.2 to 0.4 mN. Cyclic deflection tests on PC based actuators for a duration of 3 h indicated that the displacement decreased by 60%. However, actuation could be regenerated by immersing the actuator into the electrolyte solution. Surface resistivity measurements on the actuators prior to and after 3 h continuous deflection did not show any significant change in the resistivity of the PPy layer. A triple-layer model of the polymer actuator was developed based on the classic bending beam theory by considering strain continuity between PPy and PVDF. Results predicted by the model were in good agreement with the experimental data.

  12. Nanoscale Protection Layers To Mitigate Degradation in High-Energy Electrochemical Energy Storage Systems.

    Science.gov (United States)

    Lin, Chuan-Fu; Qi, Yue; Gregorczyk, Keith; Lee, Sang Bok; Rubloff, Gary W

    2018-01-16

    In the pursuit of energy storage devices with higher energy and power, new ion storage materials and high-voltage battery chemistries are of paramount importance. However, they invite-and often enhance-degradation mechanisms, which are reflected in capacity loss with charge/discharge cycling and sometimes in safety problems. Degradation mechanisms are often driven by fundamentals such as chemical and electrochemical reactions at electrode-electrolyte interfaces, volume expansion and stress associated with ion insertion and extraction, and profound inhomogeneity of electrochemical behavior. While it is important to identify and understand these mechanisms at some reasonable level, it is even more critical to design strategies to mitigate these degradation pathways and to develop means to implement and validate the strategies. A growing set of research highlights the mitigation benefits achievable by forming thin protection layers (PLs) intentionally created as artificial interphase regions at the electrode-electrolyte interface. These advances illustrate a promising-perhaps even generic-pathway for enabling higher-energy and higher-voltage battery configurations. In this Account, we summarize examples of such PLs that serve as mitigation strategies to avoid degradation in lithium metal anodes, conversion-type electrode materials, and alloy-type electrodes. Examples are chosen from a larger body of electrochemical degradation research carried out in Nanostructures for Electrical Energy Storage (NEES), our DOE Energy Frontier Research Center. Overall, we argue on the basis of experimental and theoretical evidence that PLs effectively stabilize the electrochemical interfaces to prevent parasitic chemical and electrochemical reactions and mitigate the structural, mechanical, and compositional degradation of the electrode materials at the electrode-electrolyte interfaces. The evidenced improvement in performance metrics is accomplished by (1) establishing a homogeneous

  13. Layer-by-layer composite film of nickel phthalocyanine and montmorillonite clay for synergistic effect on electrochemical detection of dopamine

    Science.gov (United States)

    de Lucena, Nathalia C.; Miyazaki, Celina M.; Shimizu, Flávio M.; Constantino, Carlos J. L.; Ferreira, Marystela

    2018-04-01

    Dopamine (DA) abnormal levels are related to diseases which makes important the development of fast, reliable, low-cost and sensitive devices for diagnosis and pharmaceutical controls. Nanostructured film composite of sodium montmorillonite clay (Na+MMT) and nickel phthalocyanine (NiTsPc) was self-assembled by layer-by-layer (LbL) technique and applied as electrochemical sensor for DA in the presence of common natural interferents as ascorbic acid (AA) and uric acid (UA). Three different LbL architecture films were investigated: LbL films of clay (PEI/Na+MMT) and phthalocyanine (PEI/NiTsPc) in a bilayer structure with a conventional polyelectrolyte (PEI) and a composite film formed by both materials to verify the synergistic effect in the LbL film in a quadri-layer assembly (PEI/Na+MMT/PEI/NiTsPc). Structural characterization indicated molecular level interactions between the layers forming the LbL films. The ITO/(PEI/Na+MMT/PEI/NiTsPc)10 electrode exhibited a LOD of 1.0 μmol L-1 and linear range 5-150 μmol L-1.

  14. Plasma-assisted atomic layer deposition of Al(2)O(3) and parylene C bi-layer encapsulation for chronic implantable electronics.

    Science.gov (United States)

    Xie, Xianzong; Rieth, Loren; Merugu, Srinivas; Tathireddy, Prashant; Solzbacher, Florian

    2012-08-27

    Encapsulation of biomedical implants with complex three dimensional geometries is one of the greatest challenges achieving long-term functionality and stability. This report presents an encapsulation scheme that combines Al(2)O(3) by atomic layer deposition with parylene C for implantable electronic systems. The Al(2)O(3)-parylene C bi-layer was used to encapsulate interdigitated electrodes, which were tested invitro by soak testing in phosphate buffered saline solution at body temperature (37 °C) and elevated temperatures (57 °C and 67 °C) for accelerated lifetime testing up to 5 months. Leakage current and electrochemical impedance spectroscopy were measured for evaluating the integrity and insulation performance of the coating. Leakage current was stably about 15 pA at 5 V dc, and impedance was constantly about 3.5 MΩ at 1 kHz by using electrochemical impedance spectroscopy for samples under 67 °C about 5 months (approximately equivalent to 40 months at 37 °C). Alumina and parylene coating lasted at least 3 times longer than parylene coated samples tested at 80 °C. The excellent insulation performance of the encapsulation shows its potential usefulness for chronic implants.

  15. Electrochemical atomic layer deposition of Pt nanostructures on fuel cell gas diffusion layer

    CSIR Research Space (South Africa)

    Modibedi, M

    2010-12-01

    Full Text Available and test MEA?s performance in PEMFC. BIBLIOGRAPHY 1. Barbir F., (2005) PEM Fuel Cells: Theory and Practice, Elsevier Academic Press Oxford. 2. Yang T.-H., et al (2004) J. Power Sources 127 230. 3. Hirano S., Kim J. and Srinivasan S., (1997) Electrochim... stream_source_info Modibedi_2010.pdf.txt stream_content_type text/plain stream_size 5644 Content-Encoding ISO-8859-1 stream_name Modibedi_2010.pdf.txt Content-Type text/plain; charset=ISO-8859-1 RESULTS AND DISCUSSIONS...

  16. Two-Dimensional SnO Anodes with a Tunable Number of Atomic Layers for Sodium Ion Batteries

    KAUST Repository

    Zhang, Fan

    2017-01-18

    We have systematically changed the number of atomic layers stacked in 2D SnO nanosheet anodes and studied their sodium ion battery (SIB) performance. The results indicate that as the number of atomic SnO layers in a sheet decreases, both the capacity and cycling stability of the Na ion battery improve. The thinnest SnO nanosheet anodes (two to six SnO monolayers) exhibited the best performance. Specifically, an initial discharge and charge capacity of 1072 and 848 mAh g-1 were observed, respectively, at 0.1 A g-1. In addition, an impressive reversible capacity of 665 mAh g-1 after 100 cycles at 0.1 A g-1 and 452 mAh g-1 after 1000 cycles at a high current density of 1.0 A g-1 was observed, with excellent rate performance. As the average number of atomic layers in the anode sheets increased, the battery performance degraded significantly. For example, for the anode sheets with 10-20 atomic layers, only a reversible capacity of 389 mAh g-1 could be obtained after 100 cycles at 0.1 A g-1. Density functional theory calculations coupled with experimental results were used to elucidate the sodiation mechanism of the SnO nanosheets. This systematic study of monolayer-dependent physical and electrochemical properties of 2D anodes shows a promising pathway to engineering and mitigating volume changes in 2D anode materials for sodium ion batteries. It also demonstrates that ultrathin SnO nanosheets are promising SIB anode materials with high specific capacity, stable cyclability, and excellent rate performance.

  17. The electrochemical transfer reactions and the structure of the iron|oxide layer|electrolyte interface

    International Nuclear Information System (INIS)

    Petrović, Željka; Metikoš-Huković, Mirjana; Babić, Ranko

    2012-01-01

    The thickness, barrier (protecting) and semiconducting properties of the potentiostatically formed oxide films on the pure iron electrode in an aqueous borate buffer solution were investigated by electrochemical quartz crystal nanobalance (EQCN), electrochemical impedance spectroscopy (EIS), and Mott–Schottky (MS) analysis. The thicknesses of the prepassive Fe(II)hydroxide layer (up to monolayer) nucleated on the bare iron surface and the passive Fe(II)/Fe(III) layer (up to 2 nm), deposited on the top of the first one, were determined using in situ gravimetry. Electronic properties of iron prepassive and passive films as well as ionic and electronic transfer reactions at the film|solution interface were discussed on the basis of a band structure model of the surface oxide film and the potential distribution at the interface. The anodic oxide film formation and cathodic decomposition are coupled processes and their reversible inter-conversion is mediated by the availability of free charge carriers on the electrode|solution interface. The structure of the reversible double layer at the iron oxide|solution interface was discussed based on the concept of the specific adsorption of the imidazolium cation on the negatively charged electrode surface at pH > pH pzc .

  18. Investigation of the electrochemical deposition of thick layers of cadmium telluride

    International Nuclear Information System (INIS)

    Rousset, J.

    2007-04-01

    This research thesis deals with the problem of electrochemical deposition of thick layers of cadmium telluride (CdTe) meeting the requirements of high energy radiation detection. The author first recalls the physicochemical properties of CdTe and the basic principles of radiology. He details the different criteria which define a material for X ray detection. He describes the experimental conditions, the nature and preparation of substrates, and the different electrochemical systems used in this research. He studies the impact of the applied potential on the material properties, and compares previously obtained results available in the literature with those obtained in the chosen pool conditions. He discusses the synthesis of CdTe thick layers for which different methods are tested: static in potential, static in intensity, pulsed. The coatings obtained with a given potential and then with a given current are investigated. Finally, the influence of a thermal treatment in presence or absence of a sintering agent on the morphology, the chemical composition, and the crystalline and electric properties of the deposited material is discussed, and the results of the behaviour under X rays of a electrodeposited layer are presented

  19. Atomic layer deposition on nanoparticles in a rotary reactor

    Science.gov (United States)

    McCormick, Jarod Alan

    Challenges are encountered during atomic layer deposition (ALD) on large quantities of nanoparticles. The particles must be agitated or vigorously mixed to perform the ALD surface reactions in reasonable times and to prevent the particles from being agglomerated by the ALD film. The high surface area of nanoparticles also demands efficient reactant usage because large quantities of reactant are required for the surface reactions to reach completion. To address these challenges, a novel rotary reactor was developed to achieve constant particle agitation during static ALD reactant exposures. In the design of this new reactor, a cylindrical drum with porous metal walls was positioned inside a vacuum chamber. The porous cylindrical drum was rotated by a magnetically coupled rotary feedthrough. By rotating the cylindrical drum to obtain a centrifugal force of less than one gravitational force, the particles were agitated by a continuous "avalanche" of particles. The effectiveness of this rotary reactor was demonstrated by Al 2O3 ALD on ZrO2 particles. A number of techniques including transmission electron microscopy, Fourier transform infrared spectroscopy, scanning Auger spectroscopy and x-ray photoelectron spectroscopy confirmed that the Al2O3 ALD film conformally coats the ZrO 2 particles. Combining static reactant exposures with a very high surface area sample in the rotary reactor also provides unique opportunities for studying the surface chemistry during ALD. Sequential, subsaturating doses can be used to examine the self-limiting behavior of the ALD reactions in the rotary reactor. This dosing method is the first demonstration of self-limiting ALD on bulk quantities of nanoparticles. By combining these sequential, subsaturating doses with quadrupole mass spectrometry, ALD reactions can be analyzed from the gas phase using full mass spectrum analysis. The reaction products are present in a high enough concentration to discern a gas phase mechanism for reactions

  20. Gold atomic cluster mediated electrochemical aptasensor for the detection of lipopolysaccharide.

    Science.gov (United States)

    Posha, Biyas; Nambiar, Sindhu R; Sandhyarani, N

    2018-03-15

    We have constructed an aptamer immobilized gold atomic cluster mediated, ultrasensitive electrochemical biosensor (Apt/AuAC/Au) for LPS detection without any additional signal amplification strategy. The aptamer self-assemble onto the gold atomic clusters makes Apt/AuAC/Au an excellent platform for the LPS detection. Differential pulse voltammetry and EIS were used for the quantitative LPS detection. The Apt/AuAC/Au sensor offers an ultrasensitive and selective detection of LPS down to 7.94 × 10 -21 M level with a wide dynamic range from 0.01 attomolar to 1pM. The sensor exhibited excellent selectivity and stability. The real sample analysis was performed by spiking the diluted insulin sample with various concentration of LPS and obtained recovery within 2% error value. The sensor is found to be more sensitive than most of the literature reports. The simple and easy way of construction of this sensor provides an efficient and promising detection of an even trace amount of LPS. Copyright © 2017 Elsevier B.V. All rights reserved.

  1. Layered double hydroxide materials coated carbon electrode: New challenge to future electrochemical power devices

    International Nuclear Information System (INIS)

    Djebbi, Mohamed Amine; Braiek, Mohamed; Namour, Philippe; Ben Haj Amara, Abdesslem; Jaffrezic-Renault, Nicole

    2016-01-01

    Highlights: • MgAl and ZnAl LDH nanosheets were chemically synthesized and deposited over carbon electrode materials. • Catalytic performance of both LDHs was investigated for Fe(II) reduction reaction. • Satisfactory results have been achieved with the MgAl LDH material. • MgAl and ZnAl LDH modified carbon felt were applied in MFC as an efficient anode catalyst. • The LDH-modified anode significantly increased power performance of MFC. - Abstract: Layered double hydroxides (LDHs) have been widely used in the past years due to their unique physicochemical properties and promising applications in electroanalytical chemistry. The present paper is going to focus exclusively on magnesium-aluminum and zinc-aluminum layered double hydroxides (MgAl & ZnAl LDHs) in order to investigate the property and structure of active cation sites located within the layer structure. The MgAl and ZnAl LDH nanosheets were prepared by the constant pH co-precipitation method and uniformly supported on carbon-based electrode materials to fabricate an LDH electrode. Characterization by powder x-ray diffraction, Fourier transform infrared spectroscopy, scanning electron microscopy and transmission electron microscopy revealed the LDH form and well-crystallized materials. Wetting surface properties (hydrophilicity and hydrophobicity) of both prepared LDHs were recorded by contact angle measurement show hydrophilic character and basic property. The electrochemical performance of these hybrid materials was investigated by mainly cyclic voltammetry, electrochemical impedance spectroscopy and chronoamperometry techniques to identify the oxidation/reduction processes at the electrode/electrolyte interface and the effect of the divalent metal cations in total reactivity. The hierarchy of the modified electrode proves that the electronic conductivity of the bulk material is considerably dependent on the divalent cation and affects the limiting parameter of the overall redox process. However

  2. Layered double hydroxide materials coated carbon electrode: New challenge to future electrochemical power devices

    Energy Technology Data Exchange (ETDEWEB)

    Djebbi, Mohamed Amine, E-mail: mohamed.djebbi@etu.univ-lyon1.fr [Institut des Sciences Analytiques UMR CNRS 5280, Université Claude Bernard-Lyon 1, 5 rue de la Doua, 69100 Villeurbanne (France); Laboratoire de Physique des Matériaux Lamellaires et Nano-Matériaux Hybrides, Faculté des Sciences de Bizerte, Université de Carthage, 7021 Bizerte (Tunisia); Braiek, Mohamed [Institut des Sciences Analytiques UMR CNRS 5280, Université Claude Bernard-Lyon 1, 5 rue de la Doua, 69100 Villeurbanne (France); Namour, Philippe [Institut des Sciences Analytiques UMR CNRS 5280, Université Claude Bernard-Lyon 1, 5 rue de la Doua, 69100 Villeurbanne (France); Irstea, 5 rue de la Doua, 69100 Villeurbanne (France); Ben Haj Amara, Abdesslem [Laboratoire de Physique des Matériaux Lamellaires et Nano-Matériaux Hybrides, Faculté des Sciences de Bizerte, Université de Carthage, 7021 Bizerte (Tunisia); Jaffrezic-Renault, Nicole [Institut des Sciences Analytiques UMR CNRS 5280, Université Claude Bernard-Lyon 1, 5 rue de la Doua, 69100 Villeurbanne (France)

    2016-11-15

    Highlights: • MgAl and ZnAl LDH nanosheets were chemically synthesized and deposited over carbon electrode materials. • Catalytic performance of both LDHs was investigated for Fe(II) reduction reaction. • Satisfactory results have been achieved with the MgAl LDH material. • MgAl and ZnAl LDH modified carbon felt were applied in MFC as an efficient anode catalyst. • The LDH-modified anode significantly increased power performance of MFC. - Abstract: Layered double hydroxides (LDHs) have been widely used in the past years due to their unique physicochemical properties and promising applications in electroanalytical chemistry. The present paper is going to focus exclusively on magnesium-aluminum and zinc-aluminum layered double hydroxides (MgAl & ZnAl LDHs) in order to investigate the property and structure of active cation sites located within the layer structure. The MgAl and ZnAl LDH nanosheets were prepared by the constant pH co-precipitation method and uniformly supported on carbon-based electrode materials to fabricate an LDH electrode. Characterization by powder x-ray diffraction, Fourier transform infrared spectroscopy, scanning electron microscopy and transmission electron microscopy revealed the LDH form and well-crystallized materials. Wetting surface properties (hydrophilicity and hydrophobicity) of both prepared LDHs were recorded by contact angle measurement show hydrophilic character and basic property. The electrochemical performance of these hybrid materials was investigated by mainly cyclic voltammetry, electrochemical impedance spectroscopy and chronoamperometry techniques to identify the oxidation/reduction processes at the electrode/electrolyte interface and the effect of the divalent metal cations in total reactivity. The hierarchy of the modified electrode proves that the electronic conductivity of the bulk material is considerably dependent on the divalent cation and affects the limiting parameter of the overall redox process. However

  3. Energy and power performance of electrochemical double-layer capacitors based on molybdenum carbide derived carbon

    International Nuclear Information System (INIS)

    Thomberg, T.; Jaenes, A.; Lust, E.

    2010-01-01

    Cyclic voltammetry, constant current charge/discharge, and electrochemical impedance spectroscopy have been applied to establish the electrochemical characteristics for electric double-layer capacitor (EDLC) consisting of the 1 M (C 2 H 5 ) 3 CH 3 NBF 4 electrolyte in acetonitrile and micro/mesoporous carbon electrodes prepared from Mo 2 C, noted as C(Mo 2 C). The N 2 sorption (total BET specific surface area (S BET ≤ 1855 m 2 g -1 ), micropore area (S micro ≤ 1823 m 2 g -1 ), total pore volume (V tot ≤ 1.399 m 3 g -1 ) and pore size distribution (average NLDFT pore width d NLDFT ≥ 0.89 nm) values obtained have been correlated with the electrochemical characteristics for EDLCs (region of ideal polarizability (ΔV = 3.0 V), characteristic time constant (τ R = 1.05 s), gravimetric capacitance (C m ≤ 143 F g -1 )) dependent strongly on the C(Mo 2 C) synthesis temperature. High gravimetric energy (35 Wh kg -1 ) and gravimetric power (237 kW kg -1 ) values, normalised to the total active mass of both C(Mo 2 C) electrodes, synthesised at T synt = 800 deg. C, have been demonstrated at cell voltage 3.0 V and T = 20 deg. C.

  4. Structure dependent electrochemical performance of Li-rich layered oxides in lithium-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Fang; Yao, Yuze; Wang, Haiyan; Xu, Gui-Liang; Amine, Khalil; Sun, Shi-Gang; Shao, Minhua

    2017-04-08

    Rational and precise control of the structure and dimension of electrode materials is an efficient way to improve their electrochemical performance. In this work, solvothermal or co-precipitation method is used to synthesize lithium-rich layered oxide materials of Li1.2Mn0.56Co0.12Ni0.12O2 (LLO) with various morphologies and structures, including microspheres, microrods, nanoplates, and irregular nanoparticles. These materials exhibit strong structure- dependent electrochemical properties. The porous hierarchical structured LLO microrods exhibit the best performance, delivering a discharge capacity of 264.6 mAh g(-1) at 0.5 C with over 91% retention after 100 cycles. At a high rate of 5 C, a high discharge capacity of 173.6 mAh g(-1) can be achieved. This work reveals the relationship between the morphologies and electrochemical properties of LLO cathode materials, and provides a feasible approach to fabricating robust and high-performance electrode materials for lithium-ion batteries.

  5. Morphology, chemical composition , and electrochemical characteristics of colored titanium passive layers

    International Nuclear Information System (INIS)

    Jerkiewicz, G.; Hrapovic, S.; Vatankhah, G.; Luan, B.L.

    1999-01-01

    Brightly and uniformly colored passive layers on Ti are formed by application of AC polarization in aqueous NH 4 BF 4 . A wide spectrum of well-defined colors is accomplished by varying the AC voltage. The passive films are stable in the ambient and in aqueous chloride, perchlorate, sulfate solutions. Optical microscopy and SEM analyses indicate that the passive layers are compact and do not reveal fractures or cracks. XPS characterization of the colored passive layers reveals that their surface-chemical composition depends on the AC polarization voltage. The main constituents of the passive layers are Ti z+ , O 2- , and F - (z varies from 4 to 2 depending on the depth). Fluoride in the film originates form decomposition of NH 4 BF 4 and it accumulates at the inner metal/passive-film interface. XPS depth profiling shows that the higher the AC voltage applied, the thicker the passive film formed. Electrochemical properties of the colored Ti passive layers are determined by recording polarization curves in the -0.8 - 3.2 V, RHE, range and Tafel plots in the hydrogen evolution reaction (HER) region in 1.0 M aqueous H 2 SO 4 solution. The polarization curves show that the corrosion potential of the colored passive layers shifts towards less-negative potential indicating that they are more stable than Ti under the same conditions. The Tafel plots for the HER demonstrate that the passive layers have much higher activity than Ti towards the HER. The Tafel relations reveal new features that can be associated with the partial breakdown/decomposition of the passive layers and with H absorption. (author)

  6. Area-selective atomic layer deposition of platinum using photosensitive polyimide

    NARCIS (Netherlands)

    Vervuurt, R.H.J.; Sharma, A.; Jiao, Y.; Kessels, W.M.M.; Bol, A.A.

    2016-01-01

    Area-selective atomic layer deposition (AS-ALD) of platinum (Pt) was studied using photosensitive polyimide as a masking layer. The polyimide films were prepared by spin-coating and patterned using photolithography. AS-ALD of Pt using poly(methyl-methacrylate) (PMMA) masking layers was used as a

  7. Electrochemical Water Oxidation and Stereoselective Oxygen Atom Transfer Mediated by a Copper Complex.

    Science.gov (United States)

    Kafentzi, Maria-Chrysanthi; Papadakis, Raffaello; Gennarini, Federica; Kochem, Amélie; Iranzo, Olga; Le Mest, Yves; Le Poul, Nicolas; Tron, Thierry; Faure, Bruno; Simaan, A Jalila; Réglier, Marius

    2018-04-06

    Water oxidation by copper-based complexes to form dioxygen has attracted attention in recent years, with the aim of developing efficient and cheap catalysts for chemical energy storage. In addition, high-valent metal-oxo species produced by the oxidation of metal complexes in the presence of water can be used to achieve substrate oxygenation with the use of H 2 O as an oxygen source. To date, this strategy has not been reported for copper complexes. Herein, a copper(II) complex, [(RPY2)Cu(OTf) 2 ] (RPY2=N-substituted bis[2-pyridyl(ethylamine)] ligands; R=indane; OTf=triflate), is used. This complex, which contains an oxidizable substrate moiety (indane), is used as a tool to monitor an intramolecular oxygen atom transfer reaction. Electrochemical properties were investigated and, upon electrolysis at 1.30 V versus a normal hydrogen electrode (NHE), both dioxygen production and oxygenation of the indane moiety were observed. The ligand was oxidized in a highly diastereoselective manner, which indicated that the observed reactivity was mediated by metal-centered reactive species. The pH dependence of the reactivity was monitored and correlated with speciation deduced from different techniques, ranging from potentiometric titrations to spectroscopic studies and DFT calculations. Water oxidation for dioxygen production occurs at neutral pH and is probably mediated by the oxidation of a mononuclear copper(II) precursor. It is achieved with a rather low overpotential (280 mV at pH 7), although with limited efficiency. On the other hand, oxygenation is maximum at pH 8-8.5 and is probably mediated by the electrochemical oxidation of an antiferromagnetically coupled dinuclear bis(μ-hydroxo) copper(II) precursor. This constitutes the first example of copper-centered oxidative water activation for a selective oxygenation reaction. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Comparative investigation of the adhesion of Ce conversion layers and silane layers to a AA 2024-T3 substrate through mechanical and electrochemical tests

    Directory of Open Access Journals (Sweden)

    Luis Enrique Morales Palomino

    2007-12-01

    Full Text Available Cerium conversion layers and silane films are among the potential substitutes for the carcinogenic chromate conversion layers used to protect high-strength Al alloys. In the present work the adhesion of a cerium conversion layer and of a silane film to an aluminium alloy (AA 2024-T3 substrate was investigated using mechanical and electrochemical tests. Scanning electron microscopy (SEM- X ray energy dispersive spectroscopy (EDS, Fourier transform infrared spectroscopy (FT-IR and X ray photoelectron spectroscopy (XPS were used to characterize the layers prior and after the mechanical test consisting of ultrasonic rinse in deionized water during 30 minutes. Mechanically tested and untested layers were also submitted to electrochemical impedance spectroscopy (EIS and anodic polarization measurements in 0.1 M NaCl solution. The results of the characterization tests have pointed to a stronger adhesion of the Ce layer to the substrate in comparison with the silane film, which was confirmed by the electrochemical tests. The adhesion between the silane film and the Ce conversion layer was also tested, to evaluate the possibility of using the system as a protective bi-layer in accordance with the new trends being developed to substitute chromate conversion layers.

  9. Recent Advances in Layered Ti3 C2 Tx MXene for Electrochemical Energy Storage.

    Science.gov (United States)

    Xiong, Dongbin; Li, Xifei; Bai, Zhimin; Lu, Shigang

    2018-04-01

    Ti 3 C 2 T x , a typical representative among the emerging family of 2D layered transition metal carbides and/or nitrides referred to as MXenes, has exhibited multiple advantages including metallic conductivity, a plastic layer structure, small band gaps, and the hydrophilic nature of its functionalized surface. As a result, this 2D material is intensively investigated for application in the energy storage field. The composition, morphology and texture, surface chemistry, and structural configuration of Ti 3 C 2 T x directly influence its electrochemical performance, e.g., the use of a well-designed 2D Ti 3 C 2 T x as a rechargeable battery anode has significantly enhanced battery performance by providing more chemically active interfaces, shortened ion-diffusion lengths, and improved in-plane carrier/charge-transport kinetics. Some recent progresses of Ti 3 C 2 T x MXene are achieved in energy storage. This Review summarizes recent advances in the synthesis and electrochemical energy storage applications of Ti 3 C 2 T x MXene including supercapacitors, lithium-ion batteries, sodium-ion batteries, and lithium-sulfur batteries. The current opportunities and future challenges of Ti 3 C 2 T x MXene are addressed for energy-storage devices. This Review seeks to provide a rational and in-depth understanding of the relation between the electrochemical performance and the nanostructural/chemical composition of Ti 3 C 2 T x , which will promote the further development of 2D MXenes in energy-storage applications. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Electrochemical study of the tarnish layer of silver deposited on glass

    International Nuclear Information System (INIS)

    Amor, Y. Ben; Sutter, E.; Takenouti, H.; Tribollet, B.; Boinet, M.; Faure, R.; Balencie, J.; Durieu, G.

    2014-01-01

    Cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) were used to characterize the tarnished thin layer of silver deposited on glass. Instead of natural tarnishing in air environment, an acceleration of tarnishing process was realized by immersion of Ag covered glass in 10 μM K 2 S medium. The X-ray photoelectron spectroscopy (XPS) shows that tarnishing product formed on the silver surface consisted of Ag 2 S and Ag 2 O. As electrochemical characterization, the measurements were carried out in aerated 0.5 M Na 2 SO 4 solution adjusted at pH 10. The impedance spectra collected in sulphate medium at the open-circuit potential show one capacitive loop in parallel with a high resistance, which reflects a blocking electrode behaviour. However, the equivalent electrical circuit, R s -(CPE//R) is insufficient to reproduce the experimental results correctly. To minimize the dispersion between the experimental and fitted data, the CPE contribution is replaced by two normal power-law distributions of the local resistivity to interpret the tarnishing process in K 2 S medium with respect to the immersion time. These distributions are associated with the Ag 2 S and Ag 2 O layers

  11. Reducing interface recombination for Cu(In,Ga)Se{sub 2} by atomic layer deposited buffer layers

    Energy Technology Data Exchange (ETDEWEB)

    Hultqvist, Adam; Bent, Stacey F. [Department of Chemical Engineering, Stanford University, Stanford, California 94305 (United States); Li, Jian V.; Kuciauskas, Darius; Dippo, Patricia; Contreras, Miguel A.; Levi, Dean H. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

    2015-07-20

    Partial CuInGaSe{sub 2} (CIGS) solar cell stacks with different atomic layer deposited buffer layers and pretreatments were analyzed by photoluminescence (PL) and capacitance voltage (CV) measurements to investigate the buffer layer/CIGS interface. Atomic layer deposited ZnS, ZnO, and SnO{sub x} buffer layers were compared with chemical bath deposited CdS buffer layers. Band bending, charge density, and interface state density were extracted from the CV measurement using an analysis technique new to CIGS. The surface recombination velocity calculated from the density of interface traps for a ZnS/CIGS stack shows a remarkably low value of 810 cm/s, approaching the range of single crystalline II–VI systems. Both the PL spectra and its lifetime depend on the buffer layer; thus, these measurements are not only sensitive to the absorber but also to the absorber/buffer layer system. Pretreatment of the CIGS prior to the buffer layer deposition plays a significant role on the electrical properties for the same buffer layer/CIGS stack, further illuminating the importance of good interface formation. Finally, ZnS is found to be the best performing buffer layer in this study, especially if the CIGS surface is pretreated with potassium cyanide.

  12. Inorganic-organic hybrid coatings on stainless steel by layer-by-layer deposition and surface-initiated atom-transfer-radical polymerization for combating biocorrosion.

    Science.gov (United States)

    Yuan, S J; Pehkonen, S O; Ting, Y P; Neoh, K G; Kang, E T

    2009-03-01

    To improve the biocorrosion resistance of stainless steel (SS) and to confer the bactericidal function on its surface for inhibiting bacterial adhesion and biofilm formation, well-defined inorganic-organic hybrid coatings, consisting of the inner compact titanium oxide multilayers and outer dense poly(vinyl-N-hexylpyridinium) brushes, were successfully developed. Nanostructured titanium oxide multilayer coatings were first built up on the SS substrates via the layer-by-layer sol-gel deposition process. The trichlorosilane coupling agent, containing the alkyl halide atom-transfer-radical polymerization (ATRP) initiator, was subsequently immobilized on the titanium oxide coatings for surface-initiated ATRP of 4-vinylpyridine (4VP). The pyridium nitrogen moieties of the covalently immobilized 4VP polymer, or P(4VP), brushes were quaternized with hexyl bromide to produce a high concentration of quaternary ammonium salt on the SS surfaces. The excellent antibacterial efficiency of the grafted polycations, poly(vinyl-N-pyridinium bromide), was revealed by viable cell counts and atomic force microscopy images of the surface. The effectiveness of the hybrid coatings in corrosion protection was verified by the Tafel plot and electrochemical impedance spectroscopy measurements.

  13. Visualization of arrangements of carbon atoms in graphene layers by Raman mapping and atomic-resolution TEM

    KAUST Repository

    Cong, Chunxiao

    2013-02-01

    In-plane and out-of-plane arrangements of carbon atoms in graphene layers play critical roles in the fundamental physics and practical applications of these novel two-dimensional materials. Here, we report initial results on the edge/crystal orientations and stacking orders of bi-and tri-layer graphene (BLG and TLG) from Raman spectroscopy and transmission electron microscopy (TEM) experiments performed on the same sample. We introduce a new method of transferring graphene flakes onto a normal TEM grid. Using this novel method, we probed the BLG and TLG flakes that had been previously investigated by Raman scattering with high-resolution (atomic) TEM.

  14. Electrochemical Characteristics of Layered Transition Metal Oxide Cathode Materials for Lithium Ion Batteries: Surface, Bulk Behavior, and Thermal Properties.

    Science.gov (United States)

    Tian, Chixia; Lin, Feng; Doeff, Marca M

    2018-01-16

    Layered lithium transition metal oxides, in particular, NMCs (LiNi x Co y Mn z O 2 ) represent a family of prominent lithium ion battery cathode materials with the potential to increase energy densities and lifetime, reduce costs, and improve safety for electric vehicles and grid storage. Our work has focused on various strategies to improve performance and to understand the limitations to these strategies, which include altering compositions, utilizing cation substitutions, and charging to higher than usual potentials in cells. Understanding the effects of these strategies on surface and bulk behavior and correlating structure-performance relationships advance our understanding of NMC materials. This also provides information relevant to the efficacy of various approaches toward ensuring reliable operation of these materials in batteries intended for demanding traction and grid storage applications. In this Account, we start by comparing NMCs to the isostructural LiCoO 2 cathode, which is widely used in consumer batteries. Effects of changing the metal content (Ni, Mn, Co) upon structure and performance of NMCs are briefly discussed. Our early work on the effects of partial substitution of Al, Fe, and Ti for Co on the electrochemical and bulk structural properties is then covered. The original aim of this work was to reduce the Co content (and thus the raw materials cost) and to determine the effect of the substitutions on the electrochemical and bulk structural properties. More recently, we have turned to the application of synchrotron and advanced microscopy techniques to understand both bulk and surface characteristics of the NMCs. Via nanoscale-to-macroscale spectroscopy and atomically resolved imaging techniques, we were able to determine that the surfaces of NMC undergo heterogeneous reconstruction from a layered structure to rock salt under a variety of conditions. Interestingly, formation of rock salt also occurs under abuse conditions. The surface

  15. Ordered ZnO/AZO/PAM nanowire arrays prepared by seed-layer-assisted electrochemical deposition

    International Nuclear Information System (INIS)

    Shen, Yu-Min; Pan, Chih-Huang; Wang, Sheng-Chang; Huang, Jow-Lay

    2011-01-01

    An Al-doped ZnO (AZO) seed layer is prepared on the back side of a porous alumina membrane (PAM) substrate by spin coating followed by annealing in a vacuum at 400 °C. Zinc oxide in ordered arrays mediated by a high aspect ratio and an ordered pore array of AZO/PAM is synthesized. The ZnO nanowire array is prepared via a 3-electrode electrochemical deposition process using ZnSO 4 and H 2 O 2 solutions at a potential of − 1 V (versus saturated calomel electrode) and temperatures of 65 and 80 °C. The microstructure and chemical composition of the AZO seed layer and ZnO/AZO/PAM nanowire arrays are characterized by field emission scanning electron microscopy (FE-SEM), high-resolution transmission electron microscopy (HR-TEM), and energy-dispersive X-ray spectroscopy (EDS). Results indicate that the ZnO/AZO/PAM nanowire arrays were assembled in the nanochannel of the porous alumina template with diameters of 110–140 nm. The crystallinity of the ZnO nanowires depends on the AZO seed layer during the annealing process. The nucleation and growth process of ZnO/AZO/PAM nanowires are interpreted by the seed-layer-assisted growth mechanism.

  16. Label-free electrochemical aptasensor constructed by layer-by-layer technology for sensitive and selective detection of cancer cells.

    Science.gov (United States)

    Wang, Tianshu; Liu, Jiyang; Gu, Xiaoxiao; Li, Dan; Wang, Jin; Wang, Erkang

    2015-07-02

    Here, a cytosensor was constructed with ferrocene-appended poly(allylamine hydrochloride) (Fc-PAH) functionalized graphene (Fc-PAH-G), poly(sodium-p-styrenesulfonate) (PSS) and aptamer (AS1411) by layer-by-layer assembly technology. The hybrid nanocomposite Fc-PAH-G not only brings probes on the electrode and also promotes electron transfer between the probes and the substrate electrode. Meanwhile, LBL technology provides more effective probes to enhance amplified signal for improving the sensitivity of the detection. While AS1411 forming G-quardruplex structure and binding cancer cells, the current response of the sensing electrode decreased due to the insulating properties of cellular membrane. Differential pulse voltammetry (DPV) was performed to investigate the electrochemical detection of HeLa cells attributing to its sensitivity of the current signal change. The as-prepared aptasensor showed a high sensitivity and good stability, a widely detection range from 10 to 10(6) cells/mL with a detection limit as low as 10 cells/mL for the detection of cancer cells. Copyright © 2015. Published by Elsevier B.V.

  17. Ultrafast triggered transient energy storage by atomic layer deposition into porous silicon for integrated transient electronics

    Science.gov (United States)

    Douglas, Anna; Muralidharan, Nitin; Carter, Rachel; Share, Keith; Pint, Cary L.

    2016-03-01

    Here we demonstrate the first on-chip silicon-integrated rechargeable transient power source based on atomic layer deposition (ALD) coating of vanadium oxide (VOx) into porous silicon. A stable specific capacitance above 20 F g-1 is achieved until the device is triggered with alkaline solutions. Due to the rational design of the active VOx coating enabled by ALD, transience occurs through a rapid disabling step that occurs within seconds, followed by full dissolution of all active materials within 30 minutes of the initial trigger. This work demonstrates how engineered materials for energy storage can provide a basis for next-generation transient systems and highlights porous silicon as a versatile scaffold to integrate transient energy storage into transient electronics.Here we demonstrate the first on-chip silicon-integrated rechargeable transient power source based on atomic layer deposition (ALD) coating of vanadium oxide (VOx) into porous silicon. A stable specific capacitance above 20 F g-1 is achieved until the device is triggered with alkaline solutions. Due to the rational design of the active VOx coating enabled by ALD, transience occurs through a rapid disabling step that occurs within seconds, followed by full dissolution of all active materials within 30 minutes of the initial trigger. This work demonstrates how engineered materials for energy storage can provide a basis for next-generation transient systems and highlights porous silicon as a versatile scaffold to integrate transient energy storage into transient electronics. Electronic supplementary information (ESI) available: (i) Experimental details for ALD and material fabrication, ellipsometry film thickness, preparation of gel electrolyte and separator, details for electrochemical measurements, HRTEM image of VOx coated porous silicon, Raman spectroscopy for VOx as-deposited as well as annealed in air for 1 hour at 450 °C, SEM and transient behavior dissolution tests of uniformly coated VOx on

  18. An electrochemical aptasensor for chiral peptide detection using layer-by-layer assembly of polyelectrolyte-methylene blue/polyelectrolyte-graphene multilayer

    International Nuclear Information System (INIS)

    Qin Haixia; Liu Jiyang; Chen Chaogui; Wang Jiahi; Wang Erkang

    2012-01-01

    Highlights: ► An electrochemical aptasensor for selective detection of peptide is constructed. ► This aptasensor is based on grapheme multilayer via layer-by-layer assembly. ► Such multilayer facilitates electron transfer and provides more adsorption sites. - Abstract: Here we demonstrate for the first time that by physically adsorbing aptamer onto conductive film assembled via alternate adsorption of graphene/polyelectrolyte and methylene blue/polyelectrolyte, a label-free electrochemical aptasensor with high sensitivity and selectivity for peptide detection is constructed. Graphene multilayer derived from layer-by-layer assembly has played significant roles in this sensing strategy: allowing accumulation of methylene blue, facilitating electron transfer and providing much more adsorption site. As compared to previous electrochemical aptasensors, the current sensor based on graphene multilayer alternated with electroactive molecule layer offers extremely high capability for sensitive detection of target without interference of environmental surrounding. This electroactive probe-confined graphene multilayer confers great flexibility to combine with differential pulse voltammetry (DPV) together. In the presence of target D entiomer of arginine vasopressin (D-VP), the binding of peptide to aptamer block the electron transfer process of MB, leading to decreased current peak of DPV. By this way, this electrochemical aptasensor based on electroactive molecule-intercalated graphene multilayer provide highly sensitive and specific detection of D-VP with the lowest detectable concentration of 1 ng mL −1 and a wide detection range from 1 to 265 ng mL −1 .

  19. Tuning the thickness of electrochemically grafted layers in large area molecular junctions

    Energy Technology Data Exchange (ETDEWEB)

    Fluteau, T.; Bessis, C.; Barraud, C., E-mail: clement.barraud@univ-paris-diderot.fr; Della Rocca, M. L.; Lafarge, P. [Université Paris Diderot, Sorbonne Paris Cité, MPQ, UMR 7162, CNRS, 75205 Paris Cedex 13 (France); Martin, P.; Lacroix, J.-C. [Université Paris Diderot, Sorbonne Paris Cité, ITODYS, UMR 7086, CNRS, 15 rue J.-A. de Baïf, 75205 Paris Cedex 13 (France)

    2014-09-21

    We have investigated the thickness, the surface roughness, and the transport properties of oligo(1-(2-bisthienyl)benzene) (BTB) thin films grafted on evaporated Au electrodes, thanks to a diazonium-based electro-reduction process. The thickness of the organic film is tuned by varying the number of electrochemical cycles during the growth process. Atomic force microscopy measurements reveal the evolution of the thickness in the range of 2–27 nm. Its variation displays a linear dependence with the number of cycles followed by a saturation attributed to the insulating behavior of the organic films. Both ultrathin (2 nm) and thin (12 and 27 nm) large area BTB-based junctions have then been fabricated using standard CMOS processes and finally electrically characterized. The electronic responses are fully consistent with a tunneling barrier in case of ultrathin BTB film whereas a pronounced rectifying behavior is reported for thicker molecular films.

  20. Conduction mechanisms in thin atomic layer deposited Al2O3 layers

    International Nuclear Information System (INIS)

    Spahr, Holger; Montzka, Sebastian; Reinker, Johannes; Hirschberg, Felix; Kowalsky, Wolfgang; Johannes, Hans-Hermann

    2013-01-01

    Thin Al 2 O 3 layers of 2–135 nm thickness deposited by thermal atomic layer deposition at 80 °C were characterized regarding the current limiting mechanisms by increasing voltage ramp stress. By analyzing the j(U)-characteristics regarding ohmic injection, space charge limited current (SCLC), Schottky-emission, Fowler-Nordheim-tunneling, and Poole-Frenkel-emission, the limiting mechanisms were identified. This was performed by rearranging and plotting the data in a linear scale, such as Schottky-plot, Poole-Frenkel-plot, and Fowler-Nordheim-plot. Linear regression then was applied to the data to extract the values of relative permittivity from Schottky-plot slope and Poole-Frenkel-plot slope. From Fowler-Nordheim-plot slope, the Fowler-Nordheim-energy-barrier was extracted. Example measurements in addition to a statistical overview of the results of all investigated samples are provided. Linear regression was applied to the region of the data that matches the realistic values most. It is concluded that ohmic injection and therefore SCLC only occurs at thicknesses below 12 nm and that the Poole-Frenkel-effect is no significant current limiting process. The extracted Fowler-Nordheim-barriers vary in the range of up to approximately 4 eV but do not show a specific trend. It is discussed whether the negative slope in the Fowler-Nordheim-plot could in some cases be a misinterpreted trap filled limit in the case of space charge limited current

  1. Constructing Functional Ionic Membrane Surface by Electrochemically Mediated Atom Transfer Radical Polymerization

    Directory of Open Access Journals (Sweden)

    Fen Ran

    2016-01-01

    Full Text Available The sodium polyacrylate (PAANa contained polyethersulfone membrane that was fabricated by preparation of PES-NH2 via nonsolvent phase separation method, the introduction of bromine groups as active sites by grafting α-Bromoisobutyryl bromide, and surface-initiated electrochemically atom transfer radical polymerization (SI-eATRP of sodium acrylate (AANa on the surface of PES membrane. The polymerization could be controlled by reaction condition, such as monomer concentration, electric potential, polymerization time, and modifier concentration. The membrane surface was uniform when the monomer concentration was 0.9 mol/L, the electric potential was −0.12 V, the polymerization time was 8 h, and the modifier concentration was 2 wt.%. The membrane showed excellent hydrophilicity and blood compatibility. The water contact angle decreased from 84° to 68° and activated partial thromboplastin increased from 51 s to 84 s after modification of the membranes.

  2. Atomic Layer Deposited MoS2 as a Carbon and Binder Free Anode in Li-ion Battery

    International Nuclear Information System (INIS)

    Nandi, Dip K; Sen, Uttam K; Choudhury, Devika; Mitra, Sagar; Sarkar, Shaibal K

    2014-01-01

    Molybdenum sulfide is deposited by atomic layer deposition (ALD) using molybdenum hexacarbonyl and hydrogen sulfide. Film growth is studied using in-situ quartz crystal microbalance, ex-situ X-ray reflectivity and ellipsometry. Deposition chemistry is further investigated with in-situ Fourier transform infrared spectroscopy. Self-limiting nature of the reaction is observed, typical of ALD. Saturated growth rate of 2.5 Å per cycle at 170 °C is obtained. As-deposited films are found amorphous in nature. As-grown films are tested as lithium-ion battery anode under half cell configuration. Electrochemical charge-discharge measurements demonstrate a stable cyclic performance with good capacity retention. Discharge capacity of 851 mAh g −1 is obtained after 50 cycles which corresponds to 77% of capacity retention of the initial capacity

  3. Atomic layer deposition of ruthenium on plasma-treated vertically aligned carbon nanotubes for high-performance ultracapacitors.

    Science.gov (United States)

    Kim, Jun Woo; Kim, Byungwoo; Park, Suk Won; Kim, Woong; Shim, Joon Hyung

    2014-10-31

    It is challenging to realize a conformal metal coating by atomic layer deposition (ALD) because of the high surface energy of metals. In this study, ALD of ruthenium (Ru) on vertically aligned carbon nanotubes (CNTs) was carried out. To activate the surface of CNTs that lack surface functional groups essential for ALD, oxygen plasma was applied ex situ before ALD. X-ray photoelectron spectroscopy and Raman spectroscopy confirmed surface activation of CNTs by the plasma pretreatment. Transmission electron microscopy analysis with energy-dispersive x-ray spectroscopy composition mapping showed that ALD Ru grew conformally along CNTs walls. ALD Ru/CNTs were electrochemically oxidized to ruthenium oxide (RuOx) that can be a potentially useful candidate for use in the electrodes of ultracapacitors. Electrode performance of RuOx/CNTs was evaluated using cyclic voltammetry and galvanostatic charge-discharge measurements.

  4. Atomic Layer Deposition on Carbon Nanotubes and their Assemblies

    Science.gov (United States)

    Stano, Kelly Lynn

    Global issues related to energy and the environment have motivated development of advanced material solutions outside of traditional metals ceramics, and polymers. Taking inspiration from composites, where the combination of two or more materials often yields superior properties, the field of organic-inorganic hybrids has recently emerged. Carbon nanotube (CNT)-inorganic hybrids have drawn widespread and increasing interest in recent years due to their multifunctionality and potential impact across several technologically important application areas. Before the impacts of CNT-inorganic hybrids can be realized however, processing techniques must be developed for their scalable production. Optimization in chemical vapor deposition (CVD) methods for synthesis of CNTs and vertically aligned CNT arrays has created production routes both high throughput and economically feasible. Additionally, control of CVD parameters has allowed for growth of CNT arrays that are able to be drawn into aligned sheets and further processed to form a variety of aligned 1, 2, and 3-dimensional bulk assemblies including ribbons, yarns, and foams. To date, there have only been a few studies on utilizing these bulk assemblies for the production of CNT-inorganic hybrids. Wet chemical methods traditionally used for fabricating CNT-inorganic hybrids are largely incompatible with CNT assemblies, since wetting and drying the delicate structures with solvents can destroy their structure. It is therefore necessary to investigate alternative processing strategies in order to advance the field of CNT-inorganic hybrids. In this dissertation, atomic layer deposition (ALD) is evaluated as a synthetic route for the production of large-scale CNT-metal oxide hybrids as well as pure metal oxide architectures utilizing CNT arrays, ribbons, and ultralow density foams as deposition templates. Nucleation and growth behavior of alumina was evaluated as a function of CNT surface chemistry. While highly graphitic

  5. Diluent changes the physicochemical and electrochemical properties of the electrophoretically-deposited layers of carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Benko, Aleksandra, E-mail: akbenko@gmail.com [AGH University of Science and Technology, Faculty of Materials Science and Ceramics, A. Mickiewicza 30 Ave., 30-059, Krakow (Poland); Nocuń, Marek [AGH University of Science and Technology, Faculty of Materials Science and Ceramics, A. Mickiewicza 30 Ave., 30-059, Krakow (Poland); Berent, Katarzyna; Gajewska, Marta [AGH University of Science and Technology, Academic Centre for Materials and Nanotechnology, A. Mickiewicza 30 Ave, 30-059, Krakow (Poland); Klita, Łukasz; Wyrwa, Jan; Błażewicz, Marta [AGH University of Science and Technology, Faculty of Materials Science and Ceramics, A. Mickiewicza 30 Ave., 30-059, Krakow (Poland)

    2017-05-01

    Highlights: • Different properties of the EPD-deposited CNTs layers may be altered by changing the applied solvent. • More conductive solvents guarantee higher values of the recorded current densities, increasing kinetics of the deposition and yielding layers of higher thicknesses. • In a less conductive, organic medium, mobility of the particles is reduced, allowing for optimal packing and densification of the CNTs layer. • Proper solvent selection in the EPD of CNTs may lead to obtainment of CNTs—substrate materials with conductivity that is superior to an unmodified substrate. - Abstract: Coating the material of choice with a layer of well-adhered carbon nanotubes is a subject of interest in many fields of materials science and industry. Electrophoretic deposition is one of the methods to handle this challenging task. In this process, careful designing of the deposition parameters is crucial in obtaining the product of strictly desired properties. This study was aimed to identify the influence of the diluent on the physicochemical ad electrochemical qualities of the final product. By analyzing the properties of the suspensions being used, we were able to hypothesize on the mechanisms of carbon nanotubes—liquid interactions and their outcome on the thickness, homogeneity, chemical and structural composition and electrical conductivity of the metal substrate covered with a layer of carbon nanotubes. We obtained a materials, composed of metal and a layer of CNTs, with conductivity that is superior to an unmodified metal. This types of materials may find numerous applications in fabrication of novel electronic devices, including the implantable electrodes for biomedicine—as reported in our previous studies, these types of coating are biocompatible.

  6. Atomic Layer Control of Thin Film Growth Using Binary Reaction Sequence Chemistry

    National Research Council Canada - National Science Library

    George, Steven

    1997-01-01

    Our research is focusing on the atomic layer control of thin film growth. Our goal is to deposit films with precise control of thickness and conformality on both flat and high aspect ratio structures...

  7. Effect of substrate composition on atomic layer deposition using self-assembled monolayers as blocking layers

    International Nuclear Information System (INIS)

    Zhang, Wenyu; Engstrom, James R.

    2016-01-01

    The authors have examined the effect of two molecules that form self-assembled monolayers (SAMs) on the subsequent growth of TaN x by atomic layer deposition (ALD) on two substrate surfaces, SiO 2 and Cu. The SAMs that the authors have investigated include two vapor phase deposited, fluorinated alkyl silanes: Cl 3 Si(CH 2 ) 2 (CF 2 ) 5 CF 3 (FOTS) and (C 2 H 5 O) 3 Si(CH 2 ) 2 (CF 2 ) 7 CF 3 (HDFTEOS). Both the SAMs themselves and the TaN x thin films, grown using Ta[N(CH 3 ) 2 ] 5 and NH 3 , were analyzed ex situ using contact angle, spectroscopic ellipsometry, x-ray photoelectron spectroscopy (XPS), and low energy ion-scattering spectroscopy (LEISS). First, the authors find that both SAMs on SiO 2 are nominally stable at T s  ∼ 300 °C, the substrate temperature used for ALD, while on Cu, the authors find that HDFTEOS thermally desorbs, while FOTS is retained on the surface. The latter result reflects the difference in the head groups of these two molecules. The authors find that both SAMs strongly attenuate the ALD growth of TaN x on SiO 2 , by about a factor of 10, while on Cu, the SAMs have no effect on ALD growth. Results from LEISS and XPS are decisive in determining the nature of the mechanism of growth of TaN x on all surfaces. Growth on SiO 2 is 2D and approximately layer-by-layer, while on the surfaces terminated by the SAMs, it nucleates at defect sites, is islanded, and is 3D. In the latter case, our results support growth of the TaN x thin film over the SAM, with a considerable delay in formation of a continuous thin film. Growth on Cu, with or without the SAMs, is also 3D and islanded, and there is also a delay in the formation of a continuous thin film as compared to growth on SiO 2 . These results highlight the power of coupling measurements from both LEISS and XPS in examinations of ultrathin films formed by ALD

  8. Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization

    Energy Technology Data Exchange (ETDEWEB)

    Kraus, Theodore J.; Nepomnyashchii, Alexander B.; Parkinson, B. A., E-mail: bparkin1@uwyo.edu [Department of Chemistry, School of Energy Resources, University of Wyoming, Laramie, Wyoming 82071 (United States)

    2015-01-15

    Atomic layer deposition was used to grow epitaxial layers of anatase (001) TiO{sub 2} on the surface of SrTiO{sub 3} (100) crystals with a 3% lattice mismatch. The epilayers grow as anatase (001) as confirmed by x-ray diffraction. Atomic force microscope images of deposited films showed epitaxial layer-by-layer growth up to about 10 nm, whereas thicker films, of up to 32 nm, revealed the formation of 2–5 nm anatase nanocrystallites oriented in the (001) direction. The anatase epilayers were used as substrates for dye sensitization. The as received strontium titanate crystal was not sensitized with a ruthenium-based dye (N3) or a thiacyanine dye (G15); however, photocurrent from excited state electron injection from these dyes was observed when adsorbed on the anatase epilayers. These results show that highly ordered anatase surfaces can be grown on an easily obtained substrate crystal.

  9. Time dependence of the natural passivation process on AISI 304 in an alkaline medium: Atomic force microscopy and scanning Kelvin probe force microscopy as additional tools to electrochemical impedance spectroscopy

    Science.gov (United States)

    Benaioun, N. E.; Maafa, I.; Florentin, A.; Denys, E.; Hakiki, N. E.; Moulayat, N.; Bubendorff, J. L.

    2018-04-01

    Thin surface films formed on AISI 304 samples in an alkaline solution of pH = 13 are studied by atomic force microscopy (AFM), scanning Kelvin probe force microscopy (SKPFM) and electrochemical impedance spectroscopy (EIS) as a function of immersion time. The results reveal that changes on EIS diagrams correspond to topographical modifications on the sample surface as shown by AFM. Both techniques are therefore complementary. The oxide layer is chemically homogenous as shown by SKPFM imaging and our ultra-thin passive layer is an efficient barrier against corrosion.

  10. Electrochemical deposition and characterization of Zn-Al layered double hydroxides (LDHs) films on magnesium alloy

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Fengxia; Liang, Jun, E-mail: jliang@licp.cas.cn; Peng, Zhenjun; Liu, Baixing

    2014-09-15

    Highlights: • Zn-Al LDHs film was prepared on AZ91D Mg alloy by electrochemical deposition. • The Zn-Al LDHs film was uniform and dense with some small flaws and cracks. • The Zn-Al LDHs film had high adhesion and good corrosion protection to Mg alloy. - Abstract: A zinc-aluminum layered double hydroxides (Zn-Al LDHs) film was prepared on AZ91D magnesium (Mg) alloy substrate by electrochemical deposition method. The characteristics of the film were investigated by X-ray diffraction (XRD), Fourier transform infrared (FT-IR) and scanning electronic microscope (SEM). It was found that the electrodeposited film was composed of crystalline Zn-Al LDHs with nitrate intercalation. The Zn-Al LDHs film was uniform and dense though there also presented some small flaws and cracks. The cross cut tape test showed that the film adhered well to the substrate. Polarization and EIS measurements revealed that the LDHs coated Mg alloy had better corrosion resistance compared to that of the uncoated one in 3.5 wt.% NaCl solution, indicating that the Zn-Al LDHs film could effectively protect Mg alloy from corrosion.

  11. Electrochemical characteristics of discrete, uniform, and monodispersed hollow mesoporous carbon spheres in double-layered supercapacitors.

    Science.gov (United States)

    Chen, Xuecheng; Kierzek, Krzysztof; Wenelska, Karolina; Cendrowski, Krzystof; Gong, Jiang; Wen, Xin; Tang, Tao; Chu, Paul K; Mijowska, Ewa

    2013-11-01

    Core-shell-structured mesoporous silica spheres were prepared by using n-octadecyltrimethoxysilane (C18TMS) as the surfactant. Hollow mesoporous carbon spheres with controllable diameters were fabricated from core-shell-structured mesoporous silica sphere templates by chemical vapor deposition (CVD). By controlling the thickness of the silica shell, hollow carbon spheres (HCSs) with different diameters can be obtained. The use of ethylene as the carbon precursor in the CVD process produces the materials in a single step without the need to remove the surfactant. The mechanism of formation and the role played by the surfactant, C18TMS, are investigated. The materials have large potential in double-layer supercapacitors, and their electrochemical properties were determined. HCSs with thicker mesoporous shells possess a larger surface area, which in turn increases their electrochemical capacitance. The samples prepared at a lower temperature also exhibit increased capacitance as a result of the Brunauer-Emmett-Teller (BET) area and larger pore size. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Defect physics vis-à-vis electrochemical performance in layered mixed-metal oxide cathode materials

    Science.gov (United States)

    Hoang, Khang; Johannes, Michelle

    Layered mixed-metal oxides with different compositions of (Ni,Co,Mn) [NCM] or (Ni,Co,Al) [NCA] have been used in commercial lithium-ion batteries. Yet their defect physics and chemistry is still not well understood, despite having important implications for the electrochemical performance. In this presentation, we report a hybrid density functional study of intrinsic point defects in the compositions LiNi1/3Co1/3Mn1/3O2 (NCM1/3) and LiNi1/3Co1/3Al1/3O2 (NCA1/3) which can also be regarded as model compounds for NCM and NCA. We will discuss defect landscapes in NCM1/3 and NCA1/3 under relevant synthesis conditions with a focus on the formation of metal antisite defects and its implications on the electrochemical properties and ultimately the design of NCM and NCA cathode materials.

  13. An all-solid-state electrochemical double-layer capacitor based on a plastic crystal electrolyte

    Directory of Open Access Journals (Sweden)

    Ali eaabouimrane

    2015-08-01

    Full Text Available A plastic crystal, solid electrolyte was prepared by mixing tetrabutylammonium hexafluorophosphate salt, (C4H94NPF6, (10 molar % with succinonitrile, SCN, (N C−CH2−CH2−C N, [SCN-10%TBA-PF6]. The resultant waxy material shows a plastic crystalline phase that extend from -36 °C up to its melting at 23 °C. It shows a high ionic conductivity reaching 4 × 10−5 S/cm in the plastic crystal phase (15 °C and ~ 3 × 10−3 S/cm in the molten state (25 °C. These properties along with the high electrochemical stability rendered the use of this material as an electrolyte in an electrochemical double-layer capacitor (EDLC. The EDLC was assembled and its performance was tested by cyclic voltammetry, AC impedance spectroscopy and galvanostatic charge-discharge methods. Specific capacitance values in the range of 4-7 F/g. (of electrode active material were obtained in the plastic crystal phase at 15 °C, that although compare well with those reported for some polymer electrolytes, can be still enhanced with further development of the device and its components, and only demonstrate their great potential use for capacitors as a new application.

  14. An All-Solid-State Electrochemical Double-Layer Capacitor Based on a Plastic Crystal Electrolyte

    Energy Technology Data Exchange (ETDEWEB)

    Abouimrane, Ali; Belharouak, Ilias [Qatar Environment and Energy Research Institute, Qatar Foundation, Doha (Qatar); Abu-Lebdeh, Yaser A., E-mail: yaser.abu-lebdeh@nrc.gc.ca [Energy, Mining and Environment Portfolio and Automotive and Surface Transportation Portfolio, National Research Council of Canada, Ottawa, ON (Canada)

    2015-08-18

    A plastic crystal, solid electrolyte was prepared by mixing tetrabutylammonium hexafluorophosphate salt, (C{sub 4}H{sub 9}){sub 4}-NPF{sub 6}, (10 molar %) with succinonitrile, SCN, (N≡C−CH{sub 2}−CH{sub 2}−C≡N), [SCN-10%TBA-PF{sub 6}]. The resultant waxy material shows a plastic crystalline phase that extends from −36°C up to its melting at 23°C. It shows a high ionic conductivity reaching 4 × 10{sup -5} S/cm in the plastic crystal phase (15°C) and ~ 3 × 10{sup -3} S/cm in the molten state (25°C). These properties along with the high electrochemical stability rendered the use of this material as an electrolyte in an electrochemical double-layer capacitor (EDLC). The EDLC was assembled, and its performance was tested by cyclic voltammetry, AC impedance spectroscopy, and galvanostatic charge–discharge methods. Specific capacitance values in the range of 4–7 F/g (of electrode active material) were obtained in the plastic crystal phase at 15°C, that although compare well with those reported for some polymer electrolytes, can be still enhanced with further development of the device and its components, and only demonstrate their great potential use for capacitors as a new application.

  15. An All-Solid-State Electrochemical Double-Layer Capacitor Based on a Plastic Crystal Electrolyte

    International Nuclear Information System (INIS)

    Abouimrane, Ali; Belharouak, Ilias; Abu-Lebdeh, Yaser A.

    2015-01-01

    A plastic crystal, solid electrolyte was prepared by mixing tetrabutylammonium hexafluorophosphate salt, (C 4 H 9 ) 4 -NPF 6 , (10 molar %) with succinonitrile, SCN, (N≡C−CH 2 −CH 2 −C≡N), [SCN-10%TBA-PF 6 ]. The resultant waxy material shows a plastic crystalline phase that extends from −36°C up to its melting at 23°C. It shows a high ionic conductivity reaching 4 × 10 -5 S/cm in the plastic crystal phase (15°C) and ~ 3 × 10 -3 S/cm in the molten state (25°C). These properties along with the high electrochemical stability rendered the use of this material as an electrolyte in an electrochemical double-layer capacitor (EDLC). The EDLC was assembled, and its performance was tested by cyclic voltammetry, AC impedance spectroscopy, and galvanostatic charge–discharge methods. Specific capacitance values in the range of 4–7 F/g (of electrode active material) were obtained in the plastic crystal phase at 15°C, that although compare well with those reported for some polymer electrolytes, can be still enhanced with further development of the device and its components, and only demonstrate their great potential use for capacitors as a new application.

  16. Aging of electrochemical double layer capacitors with acetonitrile-based electrolyte at elevated voltages

    International Nuclear Information System (INIS)

    Ruch, P.W.; Cericola, D.; Foelske-Schmitz, A.; Koetz, R.; Wokaun, A.

    2010-01-01

    Laboratory-scale electrochemical capacitor cells with bound activated carbon electrodes and acetonitrile-based electrolyte were aged at various elevated constant cell voltages between 2.75 V and 4.0 V. During the constant voltage tests, the cell capacitance as well as the capacitance and resistance of each electrode was determined. Following each aging experiment, the cells were analyzed by means of electrochemical impedance spectroscopy, and the individual electrodes were characterized by gas adsorption and X-ray photoelectron spectroscopy. At cell voltages above 3.0 V, the positive electrode ages much faster than the negative. Both the capacitance loss and resistance increase of the cell could be totally attributed to the positive electrode. At cell voltages above 3.5 V also the negative electrode aged significantly. X-ray photoelectron spectroscopy indicated the presence of degradation products on the electrode surface with a much thicker layer on the positive electrode. Simultaneously, a significant decrease in electrode porosity could be detected by gas adsorption.

  17. Electrochemical deposition and characterization of Zn-Al layered double hydroxides (LDHs) films on magnesium alloy

    International Nuclear Information System (INIS)

    Wu, Fengxia; Liang, Jun; Peng, Zhenjun; Liu, Baixing

    2014-01-01

    Highlights: • Zn-Al LDHs film was prepared on AZ91D Mg alloy by electrochemical deposition. • The Zn-Al LDHs film was uniform and dense with some small flaws and cracks. • The Zn-Al LDHs film had high adhesion and good corrosion protection to Mg alloy. - Abstract: A zinc-aluminum layered double hydroxides (Zn-Al LDHs) film was prepared on AZ91D magnesium (Mg) alloy substrate by electrochemical deposition method. The characteristics of the film were investigated by X-ray diffraction (XRD), Fourier transform infrared (FT-IR) and scanning electronic microscope (SEM). It was found that the electrodeposited film was composed of crystalline Zn-Al LDHs with nitrate intercalation. The Zn-Al LDHs film was uniform and dense though there also presented some small flaws and cracks. The cross cut tape test showed that the film adhered well to the substrate. Polarization and EIS measurements revealed that the LDHs coated Mg alloy had better corrosion resistance compared to that of the uncoated one in 3.5 wt.% NaCl solution, indicating that the Zn-Al LDHs film could effectively protect Mg alloy from corrosion

  18. Electrochemically-induced reversible transition from the tunneled to layered polymorphs of manganese dioxide

    Science.gov (United States)

    Lee, Boeun; Yoon, Chong Seung; Lee, Hae Ri; Chung, Kyung Yoon; Cho, Byung Won; Oh, Si Hyoung

    2014-08-01

    Zn-ion batteries are emerging energy storage systems eligible for large-scale applications, such as electric vehicles. These batteries consist of totally environmentally-benign electrode materials and potentially manufactured very economically. Although Zn/α-MnO2 systems produce high energy densities of 225 Wh kg-1, larger than those of conventional Mg-ion batteries, they show significant capacity fading during long-term cycling and suffer from poor performance at high current rates. To solve these problems, the concrete reaction mechanism between α-MnO2 and zinc ions that occur on the cathode must be elucidated. Here, we report the intercalation mechanism of zinc ions into α-MnO2 during discharge, which involves a reversible phase transition of MnO2 from tunneled to layered polymorphs by electrochemical reactions. This transition is initiated by the dissolution of manganese from α-MnO2 during discharge process to form layered Zn-birnessite. The original tunneled structure is recovered by the incorporation of manganese ions back into the layers of Zn-birnessite during charge process.

  19. Optical and electrical properties of porous silicon layer formed on the textured surface by electrochemical etching

    Science.gov (United States)

    Weiying, Ou; Lei, Zhao; Hongwei, Diao; Jun, Zhang; Wenjing, Wang

    2011-05-01

    Porous silicon (PS) layers were formed on textured crystalline silicon by electrochemical etching in HF-based electrolyte. Optical and electrical properties of the TMAH textured surfaces with PS formation are studied. Moreover, the influences of the initial structures and the anodizing time on the optical and electrical properties of the surfaces after PS formation are investigated. The results show that the TMAH textured surfaces with PS formation present a dramatic decrease in reflectance. The longer the anodizing time is, the lower the reflectance. Moreover, an initial surface with bigger pyramids achieved lower reflectance in a short wavelength range. A minimum reflectance of 3.86% at 460 nm is achieved for a short anodizing time of 2 min. Furthermore, the reflectance spectrum of the sample, which was etched in 3 vol.% TMAH for 25 min and then anodized for 20 min, is extremely flat and lies between 3.67% and 6.15% in the wavelength range from 400 to 1040 nm. In addition, for a short anodizing time, a slight increase in the effective carrier lifetime is observed. Our results indicate that PS layers formed on a TMAH textured surface for a short anodization treatment can be used as both broadband antireflection coatings and passivation layers for the application in solar cells.

  20. Optical and electrical properties of porous silicon layer formed on the textured surface by electrochemical etching

    Energy Technology Data Exchange (ETDEWEB)

    Ou Weiying; Zhao Lei; Diao Hongwei; Zhang Jun; Wang Wenjing, E-mail: wjwangwj@126.com [Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190 (China)

    2011-05-15

    Porous silicon (PS) layers were formed on textured crystalline silicon by electrochemical etching in HF-based electrolyte. Optical and electrical properties of the TMAH textured surfaces with PS formation are studied. Moreover, the influences of the initial structures and the anodizing time on the optical and electrical properties of the surfaces after PS formation are investigated. The results show that the TMAH textured surfaces with PS formation present a dramatic decrease in reflectance. The longer the anodizing time is, the lower the reflectance. Moreover, an initial surface with bigger pyramids achieved lower reflectance in a short wavelength range. A minimum reflectance of 3.86% at 460 nm is achieved for a short anodizing time of 2 min. Furthermore, the reflectance spectrum of the sample, which was etched in 3 vol.% TMAH for 25 min and then anodized for 20 min, is extremely flat and lies between 3.67% and 6.15% in the wavelength range from 400 to 1040 nm. In addition, for a short anodizing time, a slight increase in the effective carrier lifetime is observed. Our results indicate that PS layers formed on a TMAH textured surface for a short anodization treatment can be used as both broadband antireflection coatings and passivation layers for the application in solar cells. (semiconductor technology)

  1. Highly effective synthesis of NiO/CNT nanohybrids by atomic layer deposition for high-rate and long-life supercapacitors.

    Science.gov (United States)

    Yu, Lei; Wang, Guilong; Wan, Gengping; Wang, Guizhen; Lin, Shiwei; Li, Xinyue; Wang, Kan; Bai, Zhiming; Xiang, Yang

    2016-09-21

    In this work, we report an atomic layer deposition (ALD) method for the fabrication of NiO/CNT hybrid structures in order to improve electronic conductivity, enhance cycling stability and increase rate capability of NiO used as supercapacitor electrodes. A uniform NiO coating can be well deposited on carbon nanotubes (CNTs) through simultaneously employing O3 and H2O as oxidizing agents in a single ALD cycle of NiO for the first time, with a high growth rate of nearly 0.3 Å per cycle. The electrochemical properties of the as-prepared NiO/CNT were then investigated. The results show that the electrochemical capacitive properties are strongly associated with the thickness of the NiO coating. The NiO/CNT composite materials with 200 cycles of NiO deposition exhibit the best electrochemical properties, involving high specific capacitance (622 F g(-1) at 2 A g(-1), 2013 F g(-1) for NiO), excellent rate capability (74% retained at 50 A g(-1)) and outstanding cycling stability. The impressive results presented here suggest a great potential for the fabrication of composite electrode materials by atomic layer deposition applied in high energy density storage systems.

  2. Influence of carbon conductive additives on electrochemical double-layer supercapacitor parameters

    Science.gov (United States)

    Kiseleva, E. A.; Zhurilova, M. A.; Kochanova, S. A.; Shkolnikov, E. J.; Tarasenko, A. B.; Zaitseva, O. V.; Uryupina, O. V.; Valyano, G. V.

    2018-01-01

    Electrochemical double-layer capacitors (EDLC) offer energy storage technology, highly demanded for rapid transition processes in transport and stationary applications, concerned with fast power fluctuations. Rough structure of activated carbon, widely used as electrode material because of its high specific area, leads to poor electrode conductivity. Therefore there is the need for conductive additive to decrease internal resistance and to achieve high specific power and high specific energy. Usually carbon blacks are widely used as conductive additive. In this paper electrodes with different conductive additives—two types of carbon blacks and single-walled carbon nanotubes—were prepared and characterized in organic electrolyte-based EDLC cells. Electrodes are based on original wood derived activated carbon produced by potassium hydroxide high-temperature activation at Joint Institute for High Temperatures RAS. Electrodes were prepared from slurry by cold-rolling. For electrode characterization cyclic voltammetry, impedance spectra analysis, equivalent series resistance measurements and galvanostatic charge-discharge were used.

  3. Ultrathin Graphene Membranes as Flexible Electrodes for Electrochemical Double Layer Capacitors

    Science.gov (United States)

    Talapatra, Saikat; Kar, Swastik; Shah, Rakesh; Ghosh, Sujoy; An, Xiaohong; Simmons, Trevor; Washington, Morris; Nayak, Saroj

    2010-03-01

    We will present the results of our investigations of electrochemical double layer capacitors (EDLCs) or supercapacitors (SC) fabricated using graphene based ultra thin membranes. These EDLC's show far superior performance compared to other carbon nanomaterials based EDLC's devices. We found that the graphene based devices possess specific capacitance values as high as 120 F/g, with impressive power densities (˜105 kW/kg) and energy densities (˜9.2 Wh/kg). Further, these devices indicated rapid charge transfer response even without the use of any binders or specially prepared current collectors. Our ultracapacitors reflect a significant improvement over previously reported graphene-based ultracapacitors and are substantially better than those obtained with carbon nanotubes.

  4. Atomic Layer Deposited Catalysts for Fuel Cell Applications

    DEFF Research Database (Denmark)

    Johansson, Anne-Charlotte Elisabeth Birgitta

    catalyst toward the methanol oxidation reaction (MOR). In the work described in this PhD dissertation, two series of Pt-Ru ALD catalysts supported on nitrogen-doped multi-walled carbon nanotubes (N-CNTs) have been evaluated toward the CO oxidation and MOR at room temperature in a three......The micro direct methanol fuel cell (µDMFC) has been proposed as a candidate to power portable applications. The device can operate at room temperature on inexpensive, energy-dense methanol fuel, and it can be easily "recharged" by fuel refilling. Microfabrication techniques could be one route......-electrode electrochemical cell. The first series was comprised of Pt-Ru ALD catalysts of various Ru compositions, between 0 and 100 at.%. For the compositions investigated, the best catalyst had a Ru composition of 29 at.%. In the second series Ru-decorated Pt catalysts of various Ru loadings, i.e., various Ru ALD cycles...

  5. Plasma enhanced atomic layer deposited MoOx emitters for silicon heterojunction solar cells

    OpenAIRE

    Ziegler, J.; Mews, M.; Kaufmann, K.; Schneider, T.; Sprafke, A.N.; Korte, L.; Wehrsporn, R.B

    2015-01-01

    A method for the deposition of molybdenum oxide MoOx with high growth rates at temperatures below 200 C based on plasma enhanced atomic layer deposition is presented. The stoichiometry of the overstoichiometric MoOx films can be adjusted by the plasma parameters. First results of these layers acting as hole selective contacts in silicon heterojunction solar cells are presented and discussed

  6. Label-free electrochemical aptasensor constructed by layer-by-layer technology for sensitive and selective detection of cancer cells

    International Nuclear Information System (INIS)

    Wang, Tianshu; Liu, Jiyang; Gu, Xiaoxiao; Li, Dan; Wang, Jin; Wang, Erkang

    2015-01-01

    Highlights: • Fc-PAH was modified on the surface of graphene to prepare hybid nanocomposite (Fc-PAH-G). • A cytosensor was constructed with Fc-PAH-G, PSS and aptamer AS1411 by LBL technology. • The sensing interface introduced more redox probe and enhanced current signal on electrode. • The sensor showed a detection range of 10–10 6 cells/mL with a detection limit of 10 cells/mL. - Abstract: Here, a cytosensor was constructed with ferrocene-appended poly(allylamine hydrochloride) (Fc-PAH) functionalized graphene (Fc-PAH-G), poly(sodium-p-styrenesulfonate) (PSS) and aptamer (AS1411) by layer-by-layer assembly technology. The hybrid nanocomposite Fc-PAH-G not only brings probes on the electrode and also promotes electron transfer between the probes and the substrate electrode. Meanwhile, LBL technology provides more effective probes to enhance amplified signal for improving the sensitivity of the detection. While AS1411 forming G-quardruplex structure and binding cancer cells, the current response of the sensing electrode decreased due to the insulating properties of cellular membrane. Differential pulse voltammetry (DPV) was performed to investigate the electrochemical detection of HeLa cells attributing to its sensitivity of the current signal change. The as-prepared aptasensor showed a high sensitivity and good stability, a widely detection range from 10 to 10 6 cells/mL with a detection limit as low as 10 cells/mL for the detection of cancer cells

  7. Label-free electrochemical aptasensor constructed by layer-by-layer technology for sensitive and selective detection of cancer cells

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Tianshu [College of Physics, Jilin University, Changchun, Jilin 130012 (China); State Key Laboratory of Electroanalytical Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, Jilin 130022 (China); Liu, Jiyang; Gu, Xiaoxiao; Li, Dan [State Key Laboratory of Electroanalytical Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, Jilin 130022 (China); Wang, Jin, E-mail: jin.wang.1@stonybrook.edu [College of Physics, Jilin University, Changchun, Jilin 130012 (China); State Key Laboratory of Electroanalytical Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, Jilin 130022 (China); Department of Chemistry, Physics and Applied Mathematics, State University of New York at Stony Brook, Stony Brook, NY 11794-3400 (United States); Wang, Erkang, E-mail: ekwang@ciac.jl.cn [State Key Laboratory of Electroanalytical Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, Jilin 130022 (China)

    2015-07-02

    Highlights: • Fc-PAH was modified on the surface of graphene to prepare hybid nanocomposite (Fc-PAH-G). • A cytosensor was constructed with Fc-PAH-G, PSS and aptamer AS1411 by LBL technology. • The sensing interface introduced more redox probe and enhanced current signal on electrode. • The sensor showed a detection range of 10–10{sup 6} cells/mL with a detection limit of 10 cells/mL. - Abstract: Here, a cytosensor was constructed with ferrocene-appended poly(allylamine hydrochloride) (Fc-PAH) functionalized graphene (Fc-PAH-G), poly(sodium-p-styrenesulfonate) (PSS) and aptamer (AS1411) by layer-by-layer assembly technology. The hybrid nanocomposite Fc-PAH-G not only brings probes on the electrode and also promotes electron transfer between the probes and the substrate electrode. Meanwhile, LBL technology provides more effective probes to enhance amplified signal for improving the sensitivity of the detection. While AS1411 forming G-quardruplex structure and binding cancer cells, the current response of the sensing electrode decreased due to the insulating properties of cellular membrane. Differential pulse voltammetry (DPV) was performed to investigate the electrochemical detection of HeLa cells attributing to its sensitivity of the current signal change. The as-prepared aptasensor showed a high sensitivity and good stability, a widely detection range from 10 to 10{sup 6} cells/mL with a detection limit as low as 10 cells/mL for the detection of cancer cells.

  8. Electrochemical deposition of thin nano-structured layers of CuInS2 for photovoltaic cells

    International Nuclear Information System (INIS)

    Cayzac, R.; Boulc'h, F.; Knauth, P.

    2006-01-01

    In this work, it has been shown that the electrochemical deposition seems to be a promising synthesis technique because the thickness of the layers and their morphology are well adapted to the photovoltaic application. The example of CuInS 2 has been taken. (O.M.)

  9. Speciation of inorganic arsenic by electrochemical hydride generation atomic absorption spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Li Xun [Department of Chemistry, Beijing Normal University, Beijing 100875 (China); Department of Chemistry and Life Science, Gannan Teachers College, Ganzhou 341000 (China); Jia Jing [Department of Chemistry, Beijing Normal University, Beijing 100875 (China); Wang Zhenghao [Department of Chemistry, Beijing Normal University, Beijing 100875 (China)]. E-mail: zhwang@bnu.edu.cn

    2006-02-23

    A simple procedure was developed for the speciation of inorganic arsenic by electrochemical hydride generation atomic absorption spectrometry (EcHG-AAS), without pre-reduction of As(V). Glassy carbon was selected as cathode material in the flow cell. An optimum catholyte concentration for simultaneous generation of arsine from As(III) and As(V) was 0.06 mol l{sup -1} H{sub 2}SO{sub 4}. Under the optimized conditions, adequate sensitivity and difference in ratio of slopes of the calibration curves for As(III) and As(V) can be achieved at the electrolytic currents of 0.6 and 1 A. The speciation of inorganic arsenic can be performed by controlling the electrolytic currents, and the concentration of As(III) and As(V) in the sample can be calculated according to the equations of absorbance additivity obtained at two selected electrolytic currents. The calibration curves were linear up to 50 ng ml{sup -1} for both As(III) and As(V) at 0.6 and 1 A. The detection limits of the method were 0.2 and 0.5 ng ml{sup -1} for As(III) and As(V) at 0.6 A, respectively. The relative standard deviations were of 2.1% for 20 ng ml{sup -1} As(III) and 2.5% for 20 ng ml{sup -1} As(V). The method was validated by the analysis of human hair certified reference material and successfully applied to speciation of soluble inorganic arsenic in Chinese medicine.

  10. Speciation of inorganic arsenic by electrochemical hydride generation atomic absorption spectrometry

    International Nuclear Information System (INIS)

    Li Xun; Jia Jing; Wang Zhenghao

    2006-01-01

    A simple procedure was developed for the speciation of inorganic arsenic by electrochemical hydride generation atomic absorption spectrometry (EcHG-AAS), without pre-reduction of As(V). Glassy carbon was selected as cathode material in the flow cell. An optimum catholyte concentration for simultaneous generation of arsine from As(III) and As(V) was 0.06 mol l -1 H 2 SO 4 . Under the optimized conditions, adequate sensitivity and difference in ratio of slopes of the calibration curves for As(III) and As(V) can be achieved at the electrolytic currents of 0.6 and 1 A. The speciation of inorganic arsenic can be performed by controlling the electrolytic currents, and the concentration of As(III) and As(V) in the sample can be calculated according to the equations of absorbance additivity obtained at two selected electrolytic currents. The calibration curves were linear up to 50 ng ml -1 for both As(III) and As(V) at 0.6 and 1 A. The detection limits of the method were 0.2 and 0.5 ng ml -1 for As(III) and As(V) at 0.6 A, respectively. The relative standard deviations were of 2.1% for 20 ng ml -1 As(III) and 2.5% for 20 ng ml -1 As(V). The method was validated by the analysis of human hair certified reference material and successfully applied to speciation of soluble inorganic arsenic in Chinese medicine

  11. Atomic-layer-resolved analysis of surface magnetism by diffraction spectroscopy

    International Nuclear Information System (INIS)

    Matsui, Fumihiko; Matsushita, Tomohiro; Daimon, Hiroshi

    2010-01-01

    X-ray absorption near edge structure (XANES) and X-ray magnetic circular dichroism (XMCD) measurements by Auger-electron-yield detection are powerful analysis tools for the electronic and magnetic structures of surfaces, but all the information from atoms within the electron mean-free-path range is summed into the obtained spectrum. In order to investigate the electronic and magnetic structures of each atomic layer at subsurface, we have proposed a new method, diffraction spectroscopy, which is the combination of X-ray absorption spectroscopy and Auger electron diffraction (AED). From a series of measured thickness dependent AED patterns, we deduced a set of atomic-layer-specific AED patterns arithmetically. Based on these AED patterns, we succeeded in disentangling obtained XANES and XMCD spectra into those from different atomic layers.

  12. Modeling of atomic layer deposition on nanoparticle agglomerates

    NARCIS (Netherlands)

    Jin, W.

    2017-01-01

    Nanoparticles are increasingly applied in a range of fields, such as electronics, catalysis, energy and medicine, due to their small sizes and consequent high surface-volume ratio. In many applications, it is attractive to coat the nanoparticles with a layer of different materials in order to gain

  13. Silicon protected with atomic layer deposited TiO2

    DEFF Research Database (Denmark)

    Seger, Brian; Tilley, S. David; Pedersen, Thomas

    2013-01-01

    The present work demonstrates that tuning the donor density of protective TiO2 layers on a photocathode has dramatic consequences for electronic conduction through TiO2 with implications for the stabilization of oxidation-sensitive catalysts on the surface. Vacuum annealing at 400 °C for 1 hour o...

  14. Enhanced electrochemical performance of CoAl-layered double hydroxide nanosheet arrays coated by platinum films

    International Nuclear Information System (INIS)

    Cheng, J.P.; Fang, J.H.; Li, M.; Zhang, W.F.; Liu, F.; Zhang, X.B.

    2013-01-01

    Graphical abstract: Schematic illustration for the electron transport between the current collector and the active CoAl LDH arrays, where the yellow arrows indicate the high resistance of CoAl LDH, while the green arrows present the high conductivity of Pt films on LDH. -- Highlights: •CoAl layered double hydroxide nanosheet arrays are synthesized by hydrothermal method. •Pt films coated on surface of CoAl nanosheets facilitate fast electron transport. •CoAl LDH nanosheets coated with Pt film for 5 min have an excellent performance. -- Abstract: Three-dimensional network of cobalt and aluminum layered double hydroxide (LDH) nanosheets was synthesized on nickel foam by a simple hydrothermal method. The CoAl-LDH nonosheets were subsequently coated by ion sputtering with thin layers of Pt films to facilitate fast electron transport between current collector and the CoAl-LDH active materials. The optimal thickness of the Pt film acquiring the best performance was identified by applying various sputtering time in controlled experiments. The supercapacitor built by the CoAl-LDH nanosheets coated with Pt film sputtered for 5 min has a high specific capacitance (734.4 F g −1 at 3 A g −1 ), excellent rate capability as well as cycling stability. Moreover, it showed a long life of 77% retention after 6000 cycles and its general morphology was preserved after the test. The synergetic affect of conductive layer of Pt films and CoAl-LDH on the improvement of electrochemical properties was discussed and this would provide a useful clue in designing novel and effective electrode materials for supercapacitors

  15. Layered Metal Nanoparticle Structures on Electrodes for Sensing, Switchable Controlled Uptake/Release, and Photo-electrochemical Applications.

    Science.gov (United States)

    Tel-Vered, Ran; Kahn, Jason S; Willner, Itamar

    2016-01-06

    Layered metal nanoparticle (NP) assemblies provide highly porous and conductive composites of unique electrical and optical (plasmonic) properties. Two methods to construct layered metal NP matrices are described, and these include the layer-by-layer deposition of NPs, or the electropolymerization of monolayer-functionalized NPs, specifically thioaniline-modified metal NPs. The layered NP composites are used as sensing matrices through the use of electrochemistry or surface plasmon resonance (SPR) as transduction signals. The crosslinking of the metal NP composites with molecular receptors, or the imprinting of molecular recognition sites into the electropolymerized NP matrices lead to selective and chiroselective sensing interfaces. Furthermore, the electrosynthesis of redox-active, imprinted, bis-aniline bridged Au NP composites yields electrochemically triggered "sponges" for the switchable uptake and release of electron-acceptor substrates, and results in conductive surfaces of electrochemically controlled wettability. Also, photosensitizer-relay-crosslinked Au NP composites, or electrochemically polymerized layered semiconductor quantum dot/metal NP matrices on electrodes, are demonstrated as functional nanostructures for photoelectrochemical applications. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Interactions between C and Cu atoms in single-layer graphene: direct observation and modelling.

    Science.gov (United States)

    Kano, Emi; Hashimoto, Ayako; Kaneko, Tomoaki; Tajima, Nobuo; Ohno, Takahisa; Takeguchi, Masaki

    2016-01-07

    Metal doping into the graphene lattice has been studied recently to develop novel nanoelectronic devices and to gain an understanding of the catalytic activities of metals in nanocarbon structures. Here we report the direct observation of interactions between Cu atoms and single-layer graphene by transmission electron microscopy. We document stable configurations of Cu atoms in the graphene sheet and unique transformations of graphene promoted by Cu atoms. First-principles calculations based on density functional theory reveal a reduction of energy barrier that caused rotation of C-C bonds near Cu atoms. We discuss two driving forces, electron irradiation and in situ heating, and conclude that the observed transformations were mainly promoted by electron irradiation. Our results suggest that individual Cu atoms can promote reconstruction of single-layer graphene.

  17. Magnetic dichroism in photoemission: a new element-specific magnetometer with atomic-layer resolution

    International Nuclear Information System (INIS)

    Starke, K.; Arenholz, E.; Kaindl, G.

    1998-01-01

    Full text: Magnetic coupling in layered metallic structures has become a key issue in thin-film magnetism since the observation of oscillatory exchange coupling across non-ferromagnetic spacer layers. Although this phenomenon was discovered in rare earths (RE) superlattices, mostly transition-metal systems have been studied and are now applied in data-storage industry. An understanding of the coupling mechanisms has been reached after a fabrication of high-quality interfaces became possible. It allowed, in particular, the experimental finding of induced ferromagnetic order in 'nonmagnetic' atomic layers near an interface, using element-specific probes such as magnetic circular dichroism in x-ray absorption. - In layered RE systems, by contrast, the well known intermiscibility has prevented a preparation of atomically sharp interfaces, and all RE superlattices studied so far showed interdiffusion zones of several atomic layers. In the present overview, we report the first fabrication of atomically flat heteromagnetic RE interfaces, their structural characterization and their magnetic analysis using magnetic dichroism in photoemission (MDPE). This new tool gives access to the magnetization of individual atomic layers near interfaces in favourite cases. Merits of MDPE as a magnetometer are demonstrated at the example of Eu/Gd(0001), where chemical shifts of core-level photoemission lines allow to spectroscopically separate up to four different atomic layers. The high surface sensitivity of MDPE, together with the well known dependence of the core-level binding energies on the coordination number of the photo emitting atom, opens the door to future site-specific studies of magnetism in sub-monolayer systems such as 'nanowires'

  18. XPS-nanocharacterization of organic layers electrochemically grafted on the surface of SnO_2 thin films to produce a new hybrid material coating

    International Nuclear Information System (INIS)

    Drevet, R.; Dragoé, D.; Barthés-Labrousse, M.G.; Chaussé, A.; Andrieux, M.

    2016-01-01

    Graphical abstract: An innovative hybrid material layer is synthesized by combining two processes. SnO_2 thin films are deposited by MOCVD on Si substrates and an organic layer made of carboxyphenyl moieties is electrochemically grafted by the reduction of a diazonium salt. XPS characterizations are carried out to assess the efficiency of the electrochemical grafting. Display Omitted - Highlights: • An innovative hybrid material layer is synthesized by combining two processes. • SnO_2 thin films are deposited by MOCVD on Si substrates. • An organic layer is electrochemically grafted by the reduction of a diazonium salt. • The efficiency of the grafting is accurately assessed by XPS. • Three electrochemical grafting models are proposed. - Abstract: This work presents the synthesis and the characterization of hybrid material thin films obtained by the combination of two processes. The electrochemical grafting of organic layers made of carboxyphenyl moieties is carried out from the reduction of a diazonium salt on tin dioxide (SnO_2) thin films previously deposited on Si substrates by metal organic chemical vapor deposition (MOCVD). Since the MOCVD experimental parameters impact the crystal growth of the SnO_2 layer (i.e. its morphology and its texturation), various electrochemical grafting models can occur, producing different hybrid materials. In order to evidence the efficiency of the electrochemical grafting of the carboxyphenyl moieties, X-ray Photoelectron Spectroscopy (XPS) is used to characterize the first nanometers in depth of the synthesized hybrid material layer. Then three electrochemical grafting models are proposed.

  19. Electrochemical lithiation of thin silicon based layers potentiostatically deposited from ionic liquid

    International Nuclear Information System (INIS)

    Vlaic, Codruta Aurelia; Ivanov, Svetlozar; Peipmann, Ralf; Eisenhardt, Anja; Himmerlich, Marcel; Krischok, Stefan; Bund, Andreas

    2015-01-01

    Thin silicon layers containing about 20% carbon and 20% oxygen were deposited on copper substrates by potentiostatic electroreduction from a 1 M SiCl 4 1-butyl-1-methyl-pyrrolidinium bis (trifluoromethyl) sulfonylimide [BMP][TFSI] electrolyte. The electrodeposition process was investigated by means of voltammetric techniques, coupled with in-situ microgravimetry (quartz crystal microbalance, QCM). The electrochemical and QCM data suggest a possible contribution of a partial Si 4+ to Si 2+ reduction and/or a restructuring of the metallic substrate. Considerable impact of side reactions parallel to the deposition process was indicated by QCM measurements performed under potentiostatic and potentiodynamic conditions. The deposition of silicon-based films was confirmed by energy dispersive X-ray analysis (EDX). Analysis of the chemical composition of the deposit and its elemental distribution were achieved by depth profiling X-ray photoelectron spectroscopy (XPS). The electrodeposited silicon containing layers showed stable lithiation and delithiation with capacity values of about 1200 mAhg −1 and 80% capacity retention after 300 cycles in standard EC/DMC electrolytes. In ionic liquid (IL) the material displayed lower capacity of ca. 500 mAhg −1 , which can be attributed to the higher viscosity of this electrolyte and deposition of IL decomposition products during lithiation

  20. Method of bonding a conductive layer on an electrode of an electrochemical cell

    Science.gov (United States)

    Bowker, Jeffrey C.; Singh, Prabhakar

    1989-01-01

    A dense, electronically conductive interconnection layer 26 is bonded onto a porous, tubular, electronically conductive air electrode structure 16, optionally supported by a ceramic support 22, by (A) providing an air electrode surface, (B) forming on a selected portion of the electrode surface 24, without the use of pressure, particles of LaCrO.sub.3 doped with an element selected from the group consisting of Sr, Mg, Ca, Ba, Co, and mixtures thereof, where the particles have a deposit on their surface comprising calcium oxide and chromium oxide; (C) heating the particles with the oxide surface deposit in an oxidizing atmosphere at from 1,300.degree. C. to 1,550.degree. C., without the application of pressure, to provide a dense, sintered, interconnection material 26 bonded to the air electrode 16, where calcium and chromium from the surface deposit are incorporated into the structure of the LaCrO.sub.3. A solid electrolyte layer 18 can be applied to the uncovered portion of the air electrode, and a fuel electrode 20 can be applied to the solid electrolyte, to provide an electrochemical cell 10.

  1. Photo-electrochemical and impedance investigation of passive layers grown anodically on titanium alloys

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, N.T.C. [Departamento de Quimica, Universidade Federal de Sao Carlos, CP 676, 13560-970 Sao Carlos, SP (Brazil); Biaggio, S.R. [Departamento de Quimica, Universidade Federal de Sao Carlos, CP 676, 13560-970 Sao Carlos, SP (Brazil); Piazza, S. [Dipartimento di Ingegneria Chimica dei Processi e dei Materiali, Universita di Palermo, Viale delle Scienze, 90128 Palermo (Italy)]. E-mail: piazza@dicpm.unipa.it; Sunseri, C. [Dipartimento di Ingegneria Chimica dei Processi e dei Materiali, Universita di Palermo, Viale delle Scienze, 90128 Palermo (Italy); Di Quarto, F. [Dipartimento di Ingegneria Chimica dei Processi e dei Materiali, Universita di Palermo, Viale delle Scienze, 90128 Palermo (Italy)

    2004-10-15

    The anodic behaviour of two titanium cast alloys, obtained by fusion in a voltaic arc under argon atmosphere, was analyzed in aerated aqueous solutions having different pH values. In all solutions the alloys, having nominal compositions Ti-50Zr at.% and Ti-13Zr-13Nb wt.%, displayed a valve-metal behaviour, owing to the formation of barrier-type oxide films. Passive films, grown potentiodynamically up to about 9 V, were investigated by photocurrent spectroscopy (PCS) and electrochemical impedance spectroscopy (EIS). These passive layers show photoactivity under anodic polarizations, with optical gaps close to 3.55 and 3.25 eV for the binary and the ternary alloy, respectively, independent of the anodizing electrolyte. Films grown on the binary alloy present insulating behaviour and anodic impedance spectra with one time constant; this was interpreted in terms of a single-layer mixed Ti-Zr oxide enriched in Ti with respect to the alloy composition. Also for the ternary alloy the results are consistent with the formation, upon anodization, of Ti-Nb-Zr mixed oxide films, but they display n-type semiconducting behaviour, owing to their poor content of ZrO{sub 2} groups.

  2. Electrochemical hydride generation atomic fluorescence spectrometry for detection of tin in canned foods using polyaniline-modified lead cathode

    Energy Technology Data Exchange (ETDEWEB)

    Jiang Xianjuan [Department of Chemistry, University of Science and Technology of China, Hefei, Anhui 230026 (China); Gan Wuer, E-mail: wgan@ustc.edu.cn [Department of Chemistry, University of Science and Technology of China, Hefei, Anhui 230026 (China); Wan Lingzhong; Deng Yun; Yang Qinghua; He Youzhao [Department of Chemistry, University of Science and Technology of China, Hefei, Anhui 230026 (China)

    2010-12-15

    An electrochemical hydride generation system with polyaniline-modified lead cathode was developed for tin determination by coupling with atomic fluorescence spectrometry. The tin fluorescence signal intensity was improved evidently as the polyaniline membrane could facilitate the transformation process from atomic tin to the SnH{sub 4} and prevent the aggradation of Sn atom on Pb electrode surface. The effects of experimental parameters and interferences have been studied. The limit of detection (LOD) was 1.5 ng mL{sup -1} (3{sigma}) and the relative standard deviation (RSD) was 3.3% for 11 consecutive measurements of 50 ng mL{sup -1} Sn(IV) standard solution.

  3. Electrochemical hydride generation atomic fluorescence spectrometry for detection of tin in canned foods using polyaniline-modified lead cathode.

    Science.gov (United States)

    Jiang, Xianjuan; Gan, Wuer; Wan, Lingzhong; Deng, Yun; Yang, Qinghua; He, Youzhao

    2010-12-15

    An electrochemical hydride generation system with polyaniline-modified lead cathode was developed for tin determination by coupling with atomic fluorescence spectrometry. The tin fluorescence signal intensity was improved evidently as the polyaniline membrane could facilitate the transformation process from atomic tin to the SnH(4) and prevent the aggradation of Sn atom on Pb electrode surface. The effects of experimental parameters and interferences have been studied. The limit of detection (LOD) was 1.5 ng mL(-1) (3σ) and the relative standard deviation (RSD) was 3.3% for 11 consecutive measurements of 50 ng mL(-1) Sn(IV) standard solution. Copyright © 2010 Elsevier B.V. All rights reserved.

  4. Electrochemical behavior of hydroxyapatite/TiN multi-layer coatings on Ti alloys

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Eun-Ju [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, School of Dentistry, Chosun University (Korea, Republic of); Jeong, Yong-Hoon [Biomechanics and Tissue Engineering Laboratory, Division of Orthodontics, College of Dentistry, The Ohio State University, Columbus, OH (United States); Choe, Han-Cheol, E-mail: hcchoe@chosun.ac.kr [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, School of Dentistry, Chosun University (Korea, Republic of); Brantley, William A. [Division of Restorative Science and Prosthodontics, College of Dentistry, The Ohio State University, Columbus, OH (United States)

    2014-12-01

    The electrochemical behavior of hydroxyapatite (HA) and titanium nitride (TiN) multi-layer coatings on Ti–Nb–Zr alloys was investigated by a variety of surface analytical methods. The HA/TiN layers were deposited using a magnetron sputtering system. The HA target was made of human tooth-ash sintered at 1300 °C for 1 h and had an average Ca/P ratio of 1.9. From X-ray diffraction patterns, the Ti–29Nb–5Zr alloy was composed entirely of equiaxed β-phase exhibiting the principal (110) reflection, and the coating exhibited the (111) and (200) reflections for TiN and the (112) and (202) reflections for HA. At the coating surface the HA films consisted of granular particles, and the surface roughness was 4.22 nm. The thickness of the coating layers increased in the order of HA/TiN (lowest), TiN, and HA (highest). Potentiodynamic polarization measurements revealed that the corrosion current density was the lowest, and the corrosion potential and polarization resistance the highest, when the Ti–29Nb–5Zr surface was covered by the HA/TiN film, compared to solely HA or TiN films. - Highlights: • HA/TiN films were deposited by magnetron sputtering on a Ti–29Nb–5Zr biomedical alloy. • The corrosion current density for the HA/TiN films was lower than that of the non-coated alloy. • The polarization resistance of the HA/TiN films was higher than that of the non-coated alloy.

  5. Biomolecules Electrochemical Sensing Properties of a PMo11V@N-Doped Few Layer Graphene Nanocomposite

    Directory of Open Access Journals (Sweden)

    Diana M. Fernandes

    2015-05-01

    Full Text Available A novel hybrid nanocomposite, PMo11V@N-doped few layer graphene, was prepared by a one-step protocol through direct immobilization of the tetrabutylammonium salt of a vanadium-substituted phosphomolybdate (PMo11V onto N-doped few layer graphene (N-FLG. The nanocomposite characterization by FTIR and XPS confirmed its successful synthesis. Glassy carbon modified electrodes with PMo11V and PMo11V@N-FLG showed cyclic voltammograms consistent with surface-confined redox processes attributed to Mo-centred reductions (MoVI→MoV and a vanadium reduction (VV→VIV. Furthermore, PMo11V@N-FLG modified electrodes showed good stability and well-resolved redox peaks with high current intensities. The observed enhancement of PMo11V electrochemical properties is a consequence of a strong electronic communication between the POM and the N-doped few layer graphene. Additionally, the electro-catalytic and sensing properties towards acetaminophen (AC and theophylline (TP were evaluated by voltammetric techniques using a glassy carbon electrode modified with PMo11V@N-FLG. Under the conditions used, the square wave voltammetric peak current increased linearly with AC concentration in the presence of TP, but showing two linear ranges: 1.2 × 10−6 to 1.2 × 10−4 and 1.2 × 10−4 to 4.8 × 10−4 mol dm−3, with different AC sensitivity values, 0.022 A/mol dm−3 and 0.035 A/mol dm−3, respectively (detection limit, DL = 7.5 × 10−7 mol dm−3.

  6. Electrochemical behavior of hydroxyapatite/TiN multi-layer coatings on Ti alloys

    International Nuclear Information System (INIS)

    Kim, Eun-Ju; Jeong, Yong-Hoon; Choe, Han-Cheol; Brantley, William A.

    2014-01-01

    The electrochemical behavior of hydroxyapatite (HA) and titanium nitride (TiN) multi-layer coatings on Ti–Nb–Zr alloys was investigated by a variety of surface analytical methods. The HA/TiN layers were deposited using a magnetron sputtering system. The HA target was made of human tooth-ash sintered at 1300 °C for 1 h and had an average Ca/P ratio of 1.9. From X-ray diffraction patterns, the Ti–29Nb–5Zr alloy was composed entirely of equiaxed β-phase exhibiting the principal (110) reflection, and the coating exhibited the (111) and (200) reflections for TiN and the (112) and (202) reflections for HA. At the coating surface the HA films consisted of granular particles, and the surface roughness was 4.22 nm. The thickness of the coating layers increased in the order of HA/TiN (lowest), TiN, and HA (highest). Potentiodynamic polarization measurements revealed that the corrosion current density was the lowest, and the corrosion potential and polarization resistance the highest, when the Ti–29Nb–5Zr surface was covered by the HA/TiN film, compared to solely HA or TiN films. - Highlights: • HA/TiN films were deposited by magnetron sputtering on a Ti–29Nb–5Zr biomedical alloy. • The corrosion current density for the HA/TiN films was lower than that of the non-coated alloy. • The polarization resistance of the HA/TiN films was higher than that of the non-coated alloy

  7. Corrosion initiation of stainless steel in HCl solution studied using electrochemical noise and in-situ atomic force microscope

    International Nuclear Information System (INIS)

    Li Yan; Hu Ronggang; Wang Jingrun; Huang Yongxia; Lin Changjian

    2009-01-01

    An in-situ atomic force microscope (AFM), optical microscope and electrochemical noise (ECN) techniques were applied to the investigation of corrosion initiations in an early stage of 1Cr18Ni9Ti stainless steel immersed in 0.5 M HCl solution. The electrochemical current noise data has been analyzed using discrete wavelet transform (DWT). For the first time, the origin of wavelet coefficients is discussed based on the correlation between the evolution of the energy distribution plot (EDP) of wavelet coefficients and topographic changes. It is found that the occurrence of initiation of metastable pitting at susceptive sites is resulted from the reductive breakdown of passive film of stainless steel in the diluted HCL solution. The coefficients d 4 -d 6 are originated from metastable pitting, d 7 represents the formation and growth of stable pitting while d 8 corresponds to the general corrosion.

  8. Implementation of atomic layer etching of silicon: Scaling parameters, feasibility, and profile control

    Energy Technology Data Exchange (ETDEWEB)

    Ranjan, Alok, E-mail: alok.ranjan@us.tel.com; Wang, Mingmei; Sherpa, Sonam D.; Rastogi, Vinayak [TEL Technology Center, America LLC, 255 Fuller Road, Suite 214, Albany, New York 12203 (United States); Koshiishi, Akira [Tokyo Electron Miyagi, Ltd., 1 Techno-Hills, Taiwa-cho, Kurokawa-gun, Miyagi, 9813629 (Japan); Ventzek, Peter L. G. [Tokyo Electron America, Inc., 2400 Grove Blvd., Austin, Texas 78741 (United States)

    2016-05-15

    Atomic or layer by layer etching of silicon exploits temporally segregated self-limiting adsorption and material removal steps to mitigate the problems associated with continuous or quasicontinuous (pulsed) plasma processes: selectivity loss, damage, and profile control. Successful implementation of atomic layer etching requires careful choice of the plasma parameters for adsorption and desorption steps. This paper illustrates how process parameters can be arrived at through basic scaling exercises, modeling and simulation, and fundamental experimental tests of their predictions. Using chlorine and argon plasma in a radial line slot antenna plasma source as a platform, the authors illustrate how cycle time, ion energy, and radical to ion ratio can be manipulated to manage the deviation from ideality when cycle times are shortened or purges are incomplete. Cell based Monte Carlo feature scale modeling is used to illustrate profile outcomes. Experimental results of atomic layer etching processes are illustrated on silicon line and space structures such that iso-dense bias and aspect ratio dependent free profiles are produced. Experimental results also illustrate the profile control margin as processes move from atomic layer to multilayer by layer etching. The consequence of not controlling contamination (e.g., oxygen) is shown to result in deposition and roughness generation.

  9. Subnanometer Ga 2 O 3 Tunnelling Layer by Atomic Layer Deposition to Achieve 1.1 V Open-Circuit Potential in Dye-Sensitized Solar Cells

    KAUST Repository

    Chandiran, Aravind Kumar; Tetreault, Nicolas; Humphry-Baker, Robin; Kessler, Florian; Baranoff, Etienne; Yi, Chenyi; Nazeeruddin, Mohammad Khaja; Grä tzel, Michael

    2012-01-01

    Herein, we present the first use of a gallium oxide tunnelling layer to significantly reduce electron recombination in dye-sensitized solar cells (DSC). The subnanometer coating is achieved using atomic layer deposition (ALD) and leading to a new

  10. Electrochemical characterization of pulsed layer deposited hydroxyapatite-zirconia layers on Ti-21Nb-15Ta-6Zr alloy for biomedical application

    Energy Technology Data Exchange (ETDEWEB)

    Izquierdo, Javier [Department of Chemistry, Universidad de La Laguna, P.O. Box 456, E-38200 La Laguna, Tenerife (Spain); Bolat, Georgiana [“Gheorghe Asachi” Technical University of Iasi, Faculty of Chemical Engineering and Environmental Protection, 73 Prof. Dr. Doc. D. Mangeron Street, 700050 Iasi (Romania); Cimpoesu, Nicanor [“Gheorghe Asachi” Technical University of Iasi, Faculty of Materials Science, 61-63 Prof. Dr. Doc. D. Mangeron Street, 700050 Iasi (Romania); Trinca, Lucia Carmen [Science Department, University of Agricultural Sciences and Veterinary Medicine, M. Sadoveanu Alley 3, 700490 Iasi (Romania); Mareci, Daniel, E-mail: danmareci@yahoo.com [“Gheorghe Asachi” Technical University of Iasi, Faculty of Chemical Engineering and Environmental Protection, 73 Prof. Dr. Doc. D. Mangeron Street, 700050 Iasi (Romania); Souto, Ricardo Manuel, E-mail: rsouto@ull.es [Department of Chemistry, Universidad de La Laguna, P.O. Box 456, E-38200 La Laguna, Tenerife (Spain); Institute of Material Science and Nanotechnology, Universidad de La Laguna, E-38200 La Laguna, Tenerife (Spain)

    2016-11-01

    Highlights: • New quarternary Ti-based alloy for biomaterial application. • Combined hydroxyapatite-zirconia coating produced by pulsed laser deposition. • Porous layer formed on the coated alloy blocks electron transfer reactions. • Electrochemical behaviour consistent with passive film with duplex structure. • HA–ZrO{sub 2} coated Ti-21Nb-15Ta-6Zr exhibits high potential for osseointegration. - Abstract: A new titanium base Ti-21Nb-15Ta-6Zr alloy covered with hydroxyapatite-zirconia (HA–ZrO{sub 2}) by pulsed laser deposition (PLD) technique was characterized regarding its corrosion resistance in simulated physiological Ringer’s solution at 37 °C. For the sake of comparison, Ti-6Al-4V standard implant alloy, with and without hydroxyapatite-zirconia coating, was also characterized. Multiscale electrochemical analysis using both conventional averaging electrochemical techniques, namely electrochemical impedance spectroscopy (EIS) and potentiodynamic polarization, and spatially-resolved microelectrochemical techniques (scanning electrochemical microscopy, SECM) were used to investigate the electrochemical behaviour of the materials. In addition, scanning electron microscopy evidenced that no relevant surface morphology changes occurred on the materials upon immersion in the simulated physiological solution, despite variations in their electrochemical behaviour. Although uncoated metals appear to show better performances during conventional corrosion tests, the response is still quite similar for the HA–ZrO{sub 2} coated materials while providing superior resistance towards electron transfer due to the formation of a more dense film on the surface, thus effectively behaving as a passive material. It is believed corrosion of the HA–ZrO{sub 2} coated Ti-21Nb-15Ta-6Zr alloy will have negligible effect upon biochemical and cellular events at the bone-implant interface and could facilitate osseointegration.

  11. Facile preparation, optical and electrochemical properties of layer-by-layer V{sub 2}O{sub 5} quadrate structures

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yifu, E-mail: yfzhang@dlut.edu.cn; Zheng, Jiqi; Wang, Qiushi; Hu, Tao; Tian, Fuping; Meng, Changgong

    2017-03-31

    Highlights: • Layer-by-layer V{sub 2}O{sub 5} structures self-assembly by quadrate sheets like “multilayer cake” were synthesized. • Carbon spheres is as the structure-directing reagent like adhesive to guide the formation of layer-by-layer structures. • UV–vis spectrum shows two major absorption bands at about 340 and 478 nm and PL spectrum exhibits the emission peak at 545 nm for V{sub 2}O{sub 5} layer-by-layer structures. • The electrochemical properties of layer-by-layer V{sub 2}O{sub 5} structures are significantly improved in organic electrolyte. - Abstract: Layer-by-layer V{sub 2}O{sub 5} structures self-assembly by quadrate sheets like “multilayer cake” were successfully synthesized using NH{sub 4}VO{sub 3} as the vanadium sources by a facile hydrothermal route and combination of the calcination. The structure and composition were characterized by field emission scanning electron microscopy, energy-dispersive X-ray spectrometer, X-ray powder diffraction, Raman and Fourier transform infrared spectroscopy. The optical properties of the as-obtained V{sub 2}O{sub 5} layer-by-layer structures were investigated by the Ultraviolet–visible spectroscopy and photoluminescence spectrum. The electrochemical properties of the as-obtained V{sub 2}O{sub 5} layer-by-layer structures as electrodes in supercapacitor device were measured by cyclic voltammetry (CV) and galvanostatic charge-discharge (GCD) both in the aqueous and organic electrolyte. The specific capacitance is 347 F g{sup −1} at 1 A g{sup −1} in organic electrolyte, which is improved by 46% compared with 238 F g{sup −1} in aqueous electrolyte. During the cycle performance, the specific capacitances of V{sub 2}O{sub 5} layer-by-layer structures after 100 cycles are 30% and 82% of the initial discharge capacity in the aqueous and organic electrolyte, respectively, indicating the cycle performance is significantly improved in organic electrolyte. Our results turn out that layer-by-layer

  12. Young Investigator Proposal, Research Area 7.4 Reactive Chemical Systems: Multifunctional, Bimetallic Nanomaterials Prepared by Atomic Layer Electroless Deposition

    Science.gov (United States)

    2017-09-30

    Report: Young Investigator Proposal, Research Area 7.4 Reactive Chemical Systems: Multifunctional, Bimetallic Nanomaterials Prepared by Atomic Layer ...Chemical Systems: Multifunctional, Bimetallic Nanomaterials Prepared by Atomic Layer Electroless Deposition Report Term: 0-Other Email: pcappillino... Layer Electroless Deposition (ALED, Figure 1) is the ability to tune growth mechanism, hence growth morphology, by altering conditions. In this

  13. Surface Phenomena During Plasma-Assisted Atomic Layer Etching of SiO2.

    Science.gov (United States)

    Gasvoda, Ryan J; van de Steeg, Alex W; Bhowmick, Ranadeep; Hudson, Eric A; Agarwal, Sumit

    2017-09-13

    Surface phenomena during atomic layer etching (ALE) of SiO 2 were studied during sequential half-cycles of plasma-assisted fluorocarbon (CF x ) film deposition and Ar plasma activation of the CF x film using in situ surface infrared spectroscopy and ellipsometry. Infrared spectra of the surface after the CF x deposition half-cycle from a C 4 F 8 /Ar plasma show that an atomically thin mixing layer is formed between the deposited CF x layer and the underlying SiO 2 film. Etching during the Ar plasma cycle is activated by Ar + bombardment of the CF x layer, which results in the simultaneous removal of surface CF x and the underlying SiO 2 film. The interfacial mixing layer in ALE is atomically thin due to the low ion energy during CF x deposition, which combined with an ultrathin CF x layer ensures an etch rate of a few monolayers per cycle. In situ ellipsometry shows that for a ∼4 Å thick CF x film, ∼3-4 Å of SiO 2 was etched per cycle. However, during the Ar plasma half-cycle, etching proceeds beyond complete removal of the surface CF x layer as F-containing radicals are slowly released into the plasma from the reactor walls. Buildup of CF x on reactor walls leads to a gradual increase in the etch per cycle.

  14. Effect of calcination temperature on microstructure and electrochemical performance of lithium-rich layered oxide cathode materials

    International Nuclear Information System (INIS)

    Ma, Quanxin; Peng, Fangwei; Li, Ruhong; Yin, Shibo; Dai, Changsong

    2016-01-01

    Highlights: • A series of Li-rich layered oxide cathode materials (Li_1_._2Mn_0_._5_6Ni_0_._1_6Co_0_._0_8O_2) were successfully synthesized via a two-step synthesis method. • The effects of calcination temperature on the cathode materials were researched in detail. • A well-crystallized layered structure was obtained as the calcination temperature increased. • The samples calcined in a range of 850–900 °C exhibited excellent electrochemical performance. - Abstract: Lithium-rich layered oxide cathode materials (Li_1_._2Mn_0_._5_6Ni_0_._1_6Co_0_._0_8O_2 (LLMO)) were synthesized via a two-step synthesis method involving co-precipitation and high-temperature calcination. The effects of calcination temperature on the cathode materials were studied in detail. Structural and morphological characterizations revealed that a well-crystallized layered structure was obtained at a higher calcination temperature. Electrochemical performance evaluation revealed that a cathode material obtained at a calcination temperature of 850 °C delivered a high initial discharge capacity of 266.8 mAh g"−"1 at a 0.1 C rate and a capacity retention rate of 95.8% after 100 cycles as well as excellent rate capability. Another sample calcinated at 900 °C exhibited good cycling stability. It is concluded that the structural stability and electrochemical performance of Li-rich layered oxide cathode materials were strongly dependent on calcination temperatures. The results suggest that a calcination temperature in a range of 850–900 °C could promote electrochemical performance of this type of cathode materials.

  15. Effect of calcination temperature on microstructure and electrochemical performance of lithium-rich layered oxide cathode materials

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Quanxin; Peng, Fangwei; Li, Ruhong; Yin, Shibo; Dai, Changsong, E-mail: changsd@hit.edu.cn

    2016-11-15

    Highlights: • A series of Li-rich layered oxide cathode materials (Li{sub 1.2}Mn{sub 0.56}Ni{sub 0.16}Co{sub 0.08}O{sub 2}) were successfully synthesized via a two-step synthesis method. • The effects of calcination temperature on the cathode materials were researched in detail. • A well-crystallized layered structure was obtained as the calcination temperature increased. • The samples calcined in a range of 850–900 °C exhibited excellent electrochemical performance. - Abstract: Lithium-rich layered oxide cathode materials (Li{sub 1.2}Mn{sub 0.56}Ni{sub 0.16}Co{sub 0.08}O{sub 2} (LLMO)) were synthesized via a two-step synthesis method involving co-precipitation and high-temperature calcination. The effects of calcination temperature on the cathode materials were studied in detail. Structural and morphological characterizations revealed that a well-crystallized layered structure was obtained at a higher calcination temperature. Electrochemical performance evaluation revealed that a cathode material obtained at a calcination temperature of 850 °C delivered a high initial discharge capacity of 266.8 mAh g{sup −1} at a 0.1 C rate and a capacity retention rate of 95.8% after 100 cycles as well as excellent rate capability. Another sample calcinated at 900 °C exhibited good cycling stability. It is concluded that the structural stability and electrochemical performance of Li-rich layered oxide cathode materials were strongly dependent on calcination temperatures. The results suggest that a calcination temperature in a range of 850–900 °C could promote electrochemical performance of this type of cathode materials.

  16. Science and Emerging Technology of 2D Atomic Layered Materials and Devices

    Science.gov (United States)

    2017-09-09

    AFRL-AFOSR-JP-TR-2017-0067 Science & Emerging Technology of 2D Atomic Layered Materials and Devices Angel Rubio UNIVERSIDAD DEL PAIS VASCO - EUSKAL...DD-MM-YYYY)      27-09-2017 2.  REPORT TYPE      Final 3.  DATES COVERED (From - To)      19 Feb 2015 to 18 Feb 2017 4.  TITLE AND SUBTITLE Science ...reporting documents for AOARD project 144088, “2D Materials and Devices Beyond Graphene Science & Emerging Technology of 2D Atomic Layered Materials and

  17. Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Golnaz Karbasian

    2017-03-01

    Full Text Available Single electron transistors are nanoscale electron devices that require thin, high-quality tunnel barriers to operate and have potential applications in sensing, metrology and beyond-CMOS computing schemes. Given that atomic layer deposition is used to form CMOS gate stacks with low trap densities and excellent thickness control, it is well-suited as a technique to form a variety of tunnel barriers. This work is a review of our recent research on atomic layer deposition and post-fabrication treatments to fabricate metallic single electron transistors with a variety of metals and dielectrics.

  18. Energize Electrochemical Double Layer Capacitor by Introducing an Ambipolar Organic Redox Radical in Electrolyte.

    Science.gov (United States)

    Wang, Yonggang; Hu, Lintong; Zhang, Yue; Shi, Chao; Guo, Kai; Zhai, Tianyou; Li, Huiqiao

    2018-05-24

    Carbon based electrochemical double layer capacitors (EDLCs) generally exhibit high power and long life, but low energy density/capacitance. Pore/morphology optimization and pseudocapacitive materials modification of carbon materials have been used to improve electrode capacitance, but leading to the consumption of tap density, conductivity and stability. Introducing soluble redox mediators into electrolyte is a promising alternative to improve the capacitance of electrode. However, it is difficult to find one redox mediator that can provide additional capacitance for both positive and negative electrodes simultaneously. Here, an ambipolar organic radical, 2, 2, 6, 6-tetramethylpiperidinyloxyl (TEMPO) is first introduced to the electrolyte, which can substantially contribute additional pseudocapacitance by oxidation at the positive electrode and reduction at the negative electrode simultaneously. The EDLC with TEMPO mediator delivers an energy density as high as 51 Wh kg-1, 2.4 times of the capacitor without TEMPO, and a long cycle stability over 4000 cycles. The achieved results potentially point a new way to improve the energy density of EDLCs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Aging and failure mode of electrochemical double layer capacitors during accelerated constant load tests

    Energy Technology Data Exchange (ETDEWEB)

    Koetz, R.; Ruch, P.W.; Cericola, D. [General Energy Research Department, Electrochemistry Laboratory, Paul Scherrer Institut, CH-5232 Villigen (Switzerland)

    2010-02-01

    Electrochemical double layer capacitors of the BCAP0350 type (Maxwell Technologies) were tested under constant load conditions at different voltages and temperatures. The aging of the capacitors was monitored during the test in terms of capacitance, internal resistance and leakage current. Aging was significantly accelerated by elevated temperature or increased voltage. Only for extreme conditions at voltages of 3.5 V or temperatures above 70 C the capacitors failed due to internal pressure build-up. No other failure events such as open circuit or short circuit were detected. Impedance measurements after the tests showed increased high frequency resistance, an increased distributed resistance and most likely an increase in contact resistance between electrode and current collector together with a loss of capacitance. Capacitors aged at elevated voltages (3.3 V) exhibited a tilting of the low frequency component, which implies an increase in the heterogeneity of the electrode surface. This feature was not observed upon aging at elevated temperatures (70 C). (author)

  20. Neodymium conversion layers formed on zinc powder for improving electrochemical properties of zinc electrodes

    International Nuclear Information System (INIS)

    Zhu Liqun; Zhang Hui; Li Weiping; Liu Huicong

    2008-01-01

    Zinc powder, as active material of secondary alkaline zinc electrode, can greatly limit the performance of zinc electrode due to corrosion and dendritic growth of zinc resulting in great capacity-loss and short cycle life of the electrode. This work is devoted to modification study of zinc powder with neodymium conversion films coated directly onto it using ultrasonic immersion method for properties improvement of zinc electrodes. Scanning electron microscopy and other characterization techniques are applied to prove that neodymium conversion layers are distributing on the surface of modified zinc powder. The electrochemical performance of zinc electrodes made of such modified zinc powder is investigated through potentiodynamic polarization, potentiostatic polarization and cyclic voltammetry. The neodymium conversion films are found to have a significant effect on inhibition corrosion capability of zinc electrode in a beneficial way. It is also confirmed that the neodymium conversion coatings can obviously suppress dendritic growth of zinc electrode, which is attributed to the amelioration of deposition state of zinc. Moreover, the results of cyclic voltammetry reveal that surface modification of zinc powder enhances the cycle performance of the electrode mainly because the neodymium conversion films decrease the amounts of ZnO or Zn(OH) 2 dissolved in the electrolyte

  1. Atomistics of Ge deposition on Si(100) by atomic layer epitaxy.

    Science.gov (United States)

    Lin, D S; Wu, J L; Pan, S Y; Chiang, T C

    2003-01-31

    Chlorine termination of mixed Ge/Si(100) surfaces substantially enhances the contrast between Ge and Si sites in scanning tunneling microscopy observations. This finding enables a detailed investigation of the spatial distribution of Ge atoms deposited on Si(100) by atomic layer epitaxy. The results are corroborated by photoemission measurements aided by an unusually large chemical shift between Cl adsorbed on Si and Ge. Adsorbate-substrate atomic exchange during growth is shown to be important. The resulting interface is thus graded, but characterized by a very short length scale of about one monolayer.

  2. Impedance Characterization of the Capacitive field-Effect pH-Sensor Based on a thin-Layer Hafnium Oxide Formed by Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Michael LEE

    2014-05-01

    Full Text Available As a sensing element, silicon dioxide (SiO2 has been applied within ion-sensitive field effect transistors (ISFET. However, a requirement of increasing pH-sensitivity and stability has observed an increased number of insulating materials that obtain high-k gate being applied as FETs. The increased high-k gate reduces the required metal oxide layer and, thus, the fabrication of thin hafnium oxide (HfO2 layers by atomic layer deposition (ALD has grown with interest in recent years. This metal oxide presents advantageous characteristics that can be beneficial for the advancements within miniaturization of complementary metal oxide semiconductor (CMOS technology. In this article, we describe a process for fabrication of HfO2 based on ALD by applying water (H2O as the oxygen precursor. As a first, electrochemical impedance spectroscopy (EIS measurements were performed with varying pH (2-10 to demonstrate the sensitivity of HfO2 as a potential pH sensing material. The Nyquist plot demonstrates a high clear shift of the polarization resistance (Rp between pH 6-10 (R2 = 0.9986, Y = 3,054X + 12,100. At acidic conditions (between pH 2-10, the Rp change was small due to the unmodified oxide gate (R2 = 0.9655, Y = 2,104X + 4,250. These preliminary results demonstrate the HfO2 substrate functioned within basic to neutral conditions and establishes a great potential for applying HfO2 as a dielectric material for future pH measuring FET sensors.

  3. Atomic emission spectroscopic investigations for determining depth profiles at boride layers on iron materials

    International Nuclear Information System (INIS)

    Danzer, K.; Marx, G.

    1980-01-01

    A combination of atomic emission spectroscopic surface analysis and mechanical removement of defined surface areas in layers by grinding yields information about the depth distribution of boron in iron. In addition, the evaluation with the aid of the two-dimensional variance analysis leads to statements on the homogeneous distribution within individual layers at different depth. The results obtained in this way are in agreement with those of other methods

  4. Interface control of atomic layer deposited oxide coatings by filtered cathodic arc deposited sublayers for improved corrosion protection

    Energy Technology Data Exchange (ETDEWEB)

    Härkönen, Emma, E-mail: emma.harkonen@helsinki.fi [Laboratory of Inorganic Chemistry, University of Helsinki, P.O. Box 55, FIN-00014 Helsinki (Finland); Tervakangas, Sanna; Kolehmainen, Jukka [DIARC-Technology Inc., Espoo (Finland); Díaz, Belén; Światowska, Jolanta; Maurice, Vincent; Seyeux, Antoine; Marcus, Philippe [Laboratoire de Physico-Chimie des Surfaces, CNRS (UMR 7075) – Chimie ParisTech (ENSCP), F-75005 Paris (France); Fenker, Martin [FEM Research Institute, Precious Metals and Metals Chemistry, D-73525 Schwäbisch Gmünd (Germany); Tóth, Lajos; Radnóczi, György [Research Centre for Natural Sciences HAS, (MTA TKK), Budapest (Hungary); Ritala, Mikko [Laboratory of Inorganic Chemistry, University of Helsinki, P.O. Box 55, FIN-00014 Helsinki (Finland)

    2014-10-15

    Sublayers grown with filtered cathodic arc deposition (FCAD) were added under atomic layer deposited (ALD) oxide coatings for interface control and improved corrosion protection of low alloy steel. The FCAD sublayer was either Ta:O or Cr:O–Ta:O nanolaminate, and the ALD layer was Al{sub 2}O{sub 3}–Ta{sub 2}O{sub 5} nanolaminate, Al{sub x}Ta{sub y}O{sub z} mixture or graded mixture. The total thicknesses of the FCAD/ALD duplex coatings were between 65 and 120 nm. Thorough analysis of the coatings was conducted to gain insight into the influence of the FCAD sublayer on the overall coating performance. Similar characteristics as with single FCAD and ALD coatings on steel were found in the morphology and composition of the duplex coatings. However, the FCAD process allowed better control of the interface with the steel by reducing the native oxide and preventing its regrowth during the initial stages of the ALD process. Residual hydrocarbon impurities were buried in the interface between the FCAD layer and steel. This enabled growth of ALD layers with improved electrochemical sealing properties, inhibiting the development of localized corrosion by pitting during immersion in acidic NaCl and enhancing durability in neutral salt spray testing. - Highlights: • Corrosion protection properties of ALD coatings were improved by FCAD sublayers. • The FCAD sublayer enabled control of the coating-substrate interface. • The duplex coatings offered improved sealing properties and durability in NSS. • The protective properties were maintained during immersion in a corrosive solution. • The improvements were due to a more ideal ALD growth on the homogeneous FCAD oxide.

  5. Scanning electrochemical microscopy for the fabrication of copper nanowires: Atomic contacts with quantized conductance, and molecular adsorption effect

    International Nuclear Information System (INIS)

    Janin, Marion; Ghilane, Jalal; Lacroix, Jean-Christophe

    2012-01-01

    Highlights: ► Electrochemistry and SECM to generate copper nanowires with quantized conductance. ► Stable atomic contacts lasting for several hundreds of seconds have been obtained. ► The quantized conductances are independent of the tip and gap size. ► The method allows contacts to be generated in the presence of chosen molecules. ► Four-electrode configuration opens the route to redox gated atomic contact. - Abstract: Scanning electrochemical microscopy, SECM, is proposed as a tool for the fabrication of copper nanowires. In a first step, configuration based on two electrodes, a platinum UME (cathode) and a copper substrate (anode), operating in the SECM configuration was employed. For nanowires generated in water the conductance changes stepwise and varies by integer values of the conductance quantum G 0 . The formation of atomic contacts is supported by the ohmic behavior of the I–V curve. It depends neither on the UME tip radius nor on the initial gap size between tip and substrate. Atomic contacts generated in aqueous solutions of sodium dodecyl sulfate (SDS) below the critical micellar concentration (CMC) have conductances below 1G 0 attributed to molecular adsorption on the contact. In some cases, the nanowires have low conductance, 0.01G 0 . The corresponding I–V curve shows tunneling rather than ohmic behavior, suggesting that molecular junctions are formed with a few surfactant molecules trapped between the two electrodes. Finally, copper nanowires with quantized conductance have been generated using the SECM operating in a four-electrode setup. Thanks to the reference electrode, this configuration leads to better control of the potential of each working electrode; this setup will make it possible to evaluate the conductance variation and/or modulation upon electrochemical stimuli.

  6. Antireflective conducting nanostructures with an atomic layer deposited an AlZnO layer on a transparent substrate

    International Nuclear Information System (INIS)

    Park, Hyun-Woo; Ji, Seungmuk; Herdini, Diptya Suci; Lim, Hyuneui; Park, Jin-Seong; Chung, Kwun-Bum

    2015-01-01

    Graphical abstract: - Highlights: • We investigated the antireflective conducting nanostructures on a transparent substrate using atomic layer deposited AlZnO films. • The conformal AlZnO layer on a transparent nanostructured substrate exhibited 5.52 × 10 −4 Ω cm in resistivity and 88% in average visible transmittance. • The improvement of transparency was explained by the gradual changes of the refractive index in the film depth direction. • The decrease in electrical resistivity is strongly correlated to the increased surface area with the nanostructure and the change of chemical bonding states. - Abstract: The antireflective conducting nanostructures on a transparent substrate were shown to have enhanced optical and electrical properties via colloidal lithography and atomic layer deposition. The conformal AlZnO layer on a transparent nanostructured substrate exhibited 5.52 × 10 −4 Ω cm in resistivity and 88% in average visible transmittance, both of which were superior to those of a flat transparent conducting substrate. The improvement of transparency was explained by the gradual changes of the refractive index in the film depth direction. The decrease in electrical resistivity is strongly correlated to the increased surface area with the nanostructure and the change of chemical bonding states.

  7. Bismuth iron oxide thin films using atomic layer deposition of alternating bismuth oxide and iron oxide layers

    Energy Technology Data Exchange (ETDEWEB)

    Puttaswamy, Manjunath; Vehkamäki, Marko [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); Kukli, Kaupo, E-mail: kaupo.kukli@helsinki.fi [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); University of Tartu, Institute of Physics, W. Ostwald 1, EE-50411 Tartu (Estonia); Dimri, Mukesh Chandra [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, EE-12618 Tallinn (Estonia); Kemell, Marianna; Hatanpää, Timo; Heikkilä, Mikko J. [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); Mizohata, Kenichiro [University of Helsinki, Department of Physics, P.O. Box 64, FI-00014 Helsinki (Finland); Stern, Raivo [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, EE-12618 Tallinn (Estonia); Ritala, Mikko; Leskelä, Markku [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland)

    2016-07-29

    Bismuth iron oxide films with varying contributions from Fe{sub 2}O{sub 3} or Bi{sub 2}O{sub 3} were prepared using atomic layer deposition. Bismuth (III) 2,3-dimethyl-2-butoxide, was used as the bismuth source, iron(III) tert-butoxide as the iron source and water vapor as the oxygen source. The films were deposited as stacks of alternate Bi{sub 2}O{sub 3} and Fe{sub 2}O{sub 3} layers. Films grown at 140 °C to the thickness of 200–220 nm were amorphous, but crystallized upon post-deposition annealing at 500 °C in nitrogen. Annealing of films with intermittent bismuth and iron oxide layers grown to different thicknesses influenced their surface morphology, crystal structure, composition, electrical and magnetic properties. Implications of multiferroic performance were recognized in the films with the remanent charge polarization varying from 1 to 5 μC/cm{sup 2} and magnetic coercivity varying from a few up to 8000 A/m. - Highlights: • Bismuth iron oxide thin films were grown by atomic layer deposition at 140 °C. • The major phase formed in the films upon annealing at 500 °C was BiFeO{sub 3}. • BiFeO{sub 3} films and films containing excess Bi favored electrical charge polarization. • Slight excess of iron oxide enhanced saturative magnetization behavior.

  8. Electrochemical activation, voltage decay and hysteresis of Li-rich layered cathode probed by various cobalt content

    KAUST Repository

    Wu, Yingqiang; Xie, Leqiong; He, Xiangming; Zhuo, Linhai; Wang, Limin; Ming, Jun

    2018-01-01

    to improve their performances further. In this study, different amount of Co content is designed in Li-rich layered compounds (0.5Li2MnO3·0.5LiMn0.5-xNi0.5-xCo2xO2, 0 ≤ x ≤ 0.2), and the stepwise electrochemical activation process is applied to explore

  9. Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers

    Energy Technology Data Exchange (ETDEWEB)

    Rampelberg, Geert; Devloo-Casier, Kilian; Deduytsche, Davy; Detavernier, Christophe [Department of Solid State Sciences, Ghent University, Krijgslaan 281/S1, B-9000 Ghent (Belgium); Schaekers, Marc [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Blasco, Nicolas [Air Liquide Electronics US, L.P., 46401 Landing Parkway, Fremont, California 94538 (United States)

    2013-03-18

    Thin vanadium nitride (VN) layers were grown by atomic layer deposition using tetrakis(ethylmethylamino)vanadium and NH{sub 3} plasma at deposition temperatures between 70 Degree-Sign C and 150 Degree-Sign C on silicon substrates and polymer foil. X-ray photoelectron spectroscopy revealed a composition close to stoichiometric VN, while x-ray diffraction showed the {delta}-VN crystal structure. The resistivity was as low as 200 {mu}{Omega} cm for the as deposited films and further reduced to 143 {mu}{Omega} cm and 93 {mu}{Omega} cm by annealing in N{sub 2} and H{sub 2}/He/N{sub 2}, respectively. A 5 nm VN layer proved to be effective as a diffusion barrier for copper up to a temperature of 720 Degree-Sign C.

  10. Few-layer graphene sheets with embedded gold nanoparticles for electrochemical analysis of adenine

    Directory of Open Access Journals (Sweden)

    Biris AR

    2013-04-01

    Full Text Available Alexandru R Biris,1 Stela Pruneanu,1 Florina Pogacean,1 Mihaela D Lazar,1 Gheorghe Borodi,1 Stefania Ardelean,1 Enkeleda Dervishi,2 Fumiya Watanabe,2 Alexandru S Biris2 1National Institute for Research and Development of Isotopic and Molecular Technologies, Cluj-Napoca, Romania; 2Center for Integrative Nanotechnology Sciences, University of Arkansas at Little Rock, Little Rock, AR, USA Abstract: This work describes the synthesis of few-layer graphene sheets embedded with various amounts of gold nanoparticles (Gr-Au-x over an Aux/MgO catalytic system (where x = 1, 2, or 3 wt%. The sheet-like morphology of the Gr-Au-x nanostructures was confirmed by transmission electron microscopy and high resolution transmission electron microscopy, which also demonstrated that the number of layers within the sheets varied from two to seven. The sample with the highest percentage of gold nanoparticles embedded within the graphitic layers (Gr-Au-3 showed the highest degree of crystallinity. This distinct feature, along with the large number of edge-planes seen in high resolution transmission electron microscopic images, has a crucial effect on the electrocatalytic properties of this material. The reaction yields (40%–50% and the final purity (96%–98% of the Gr-Au-x composites were obtained by thermogravimetric analysis. The Gr-Au-x composites were used to modify platinum substrates and subsequently to detect adenine, one of the DNA bases. For the bare electrode, no oxidation signal was recorded. In contrast, all of the modified electrodes showed a strong electrocatalytic effect, and a clear peak for adenine oxidation was recorded at approximately +1.05 V. The highest increase in the electrochemical signal was obtained using a platinum/Gr-Au-3-modified electrode. In addition, this modified electrode had an exchange current density (I0, obtained from the Tafel plot one order of magnitude higher than that of the bare platinum electrode, which also confirmed that

  11. Enhanced electrical properties of dual-layer channel ZnO thin film transistors prepared by atomic layer deposition

    Science.gov (United States)

    Li, Huijin; Han, Dedong; Dong, Junchen; Yu, Wen; Liang, Yi; Luo, Zhen; Zhang, Shengdong; Zhang, Xing; Wang, Yi

    2018-05-01

    The thin film transistors (TFTs) with a dual-layer channel structure combing ZnO thin layer grown at 200 °C and ZnO film grown at 120 °C by atomic layer deposition are fabricated. The dual-layer channel TFT exhibits a low leakage current of 2.8 × 10-13 A, Ion/Ioff ratio of 3.4 × 109, saturation mobility μsat of 12 cm2 V-1 s-1, subthreshold swing (SS) of 0.25 V/decade. The SS value decreases to 0.18 V/decade after the annealing treatment in O2 due to the reduction of the trap states at the channel/dielectric interface and in the bulk channel layer. The enhanced performance obtained from the dual-layer channel TFTs is due to the ability of maintaining high mobility and suppressing the increase in the off-current at the same time.

  12. Metal Oxide Materials and Collector Efficiency in Electrochemical Supercapacitors

    Science.gov (United States)

    2010-12-01

    However, even if thick tita - nium films and/or nanostructured layers were obtained using these methods, they were composed of non-conducting titanium...following electrochemical reduction in LiClO4/acetonitrile. Table 1 reports the electrochemical parameters and the atomic composition of the tita - nium

  13. Patterned deposition by atmospheric pressure plasma-enhanced spatial atomic layer deposition

    NARCIS (Netherlands)

    Poodt, P.; Kniknie, B.J.; Branca, A.; Winands, G.J.J.; Roozeboom, F.

    2011-01-01

    An atmospheric pressure plasma enhanced atomic layer deposition reactor has been developed, to deposit Al2O3 films from trimethyl aluminum and an He/O2 plasma. This technique can be used for 2D patterned deposition in a single in-line process by making use of switched localized plasma sources. It

  14. Low-temperature atomic layer deposition of MoOx for silicon heterojunction solar cells

    NARCIS (Netherlands)

    Macco, B.; Vos, M.; Thissen, N.F.W.; Bol, A.A.; Kessels, W.M.M.

    2015-01-01

    The preparation of high-quality molybdenum oxide (MoOx) is demonstrated by plasma-enhanced atomic layer deposition (ALD) at substrate temperatures down to 50 °C. The films are amorphous, slightly substoichiometric with respect to MoO3, and free of other elements apart from hydrogen (&11 at%). The

  15. Atomic Layer Deposition of SnO2 on MXene for Li-Ion Battery Anodes

    KAUST Repository

    Ahmed, Bilal; Anjum, Dalaver H.; Gogotsi, Yury; Alshareef, Husam N.

    2017-01-01

    In this report, we show that oxide battery anodes can be grown on two-dimensional titanium carbide sheets (MXenes) by atomic layer deposition. Using this approach, we have fabricated a composite SnO2/MXene anode for Li-ion battery applications

  16. Interfacial engineering of two-dimensional nano-structured materials by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zhuiykov, Serge, E-mail: serge.zhuiykov@ugent.be [Ghent University Global Campus, Department of Applied Analytical & Physical Chemistry, Faculty of Bioscience Engineering, 119 Songdomunhwa-ro, Yeonsu-Gu, Incheon 406-840 (Korea, Republic of); Kawaguchi, Toshikazu [Global Station for Food, Land and Water Resources, Global Institution for Collaborative Research and Education, Hokkaido University, N10W5 Kita-ku, Sapporo, Hokkaido 060-0810 (Japan); Graduate School of Environmental Science, Hokkaido University, N10W5 Kita-ku, Sapporo, Hokkaido 060-0810 (Japan); Hai, Zhenyin; Karbalaei Akbari, Mohammad; Heynderickx, Philippe M. [Ghent University Global Campus, Department of Applied Analytical & Physical Chemistry, Faculty of Bioscience Engineering, 119 Songdomunhwa-ro, Yeonsu-Gu, Incheon 406-840 (Korea, Republic of)

    2017-01-15

    Highlights: • Advantages of atomic layer deposition technology (ALD) for two-dimensional nano-crystals. • Conformation of ALD technique and chemistry of precursors. • ALD of semiconductor oxide thin films. • Ultra-thin (∼1.47 nm thick) ALD-developed tungsten oxide nano-crystals on large area. - Abstract: Atomic Layer Deposition (ALD) is an enabling technology which provides coating and material features with significant advantages compared to other existing techniques for depositing precise nanometer-thin two-dimensional (2D) nanostructures. It is a cyclic process which relies on sequential self-terminating reactions between gas phase precursor molecules and a solid surface. ALD is especially advantageous when the film quality or thickness is critical, offering ultra-high aspect ratios. ALD provides digital thickness control to the atomic level by depositing film one atomic layer at a time, as well as pinhole-free films even over a very large and complex areas. Digital control extends to sandwiches, hetero-structures, nano-laminates, metal oxides, graded index layers and doping, and it is perfect for conformal coating and challenging 2D electrodes for various functional devices. The technique’s capabilities are presented on the example of ALD-developed ultra-thin 2D tungsten oxide (WO{sub 3}) over the large area of standard 4” Si substrates. The discussed advantages of ALD enable and endorse the employment of this technique for the development of hetero-nanostructure 2D semiconductors with unique properties.

  17. Atomic layer deposition for high-efficiency crystalline silicon solar cells

    NARCIS (Netherlands)

    Macco, B.; van de Loo, B.W.H.; Kessels, W.M.M.; Bachmann, J.

    2017-01-01

    This chapter illustrates that Atomic Layer Deposition (ALD) is in fact an enabler of novel high-efficiency Si solar cells, owing to its merits such as a high material quality, precise thickness control, and the ability to prepare film stacks in a well-controlled way. It gives an overview of the

  18. Atomic layer deposition of high-mobility hydrogen-doped zinc oxide

    NARCIS (Netherlands)

    Macco, B.; Knoops, H.C.M.; Verheijen, M.A.; Beyer, W.; Creatore, M.; Kessels, W.M.M.

    2017-01-01

    In this work, atomic layer deposition (ALD) has been employed to prepare high-mobility H-doped zinc oxide (ZnO:H) films. Hydrogen doping was achieved by interleaving the ZnO ALD cycles with H2 plasma treatments. It has been shown that doping with H2 plasma offers key advantages over traditional

  19. Fabrication of Nanolaminates with Ultrathin Nanolayers Using Atomic Layer Deposition: Nucleation & Growth Issues

    Science.gov (United States)

    2009-02-01

    Tecnologia de Superficies y Materiales (SMCTSM), XXVII Congreso Nacional, Oaxaca, Oaxaca, Mexico, September 26, 2007. 26. "Atomic Layer Deposition of...Nanolaminates: Fabrication and Properties" (Plenary Lecture), Sociedad Mexicana de Ciencia y Tecnologia de Superficies y Materiales (SMCTSM), XXVII

  20. Atomic layer deposition for photovoltaics : applications and prospects for solar cell manufacturing

    NARCIS (Netherlands)

    van Delft, J.A.; Garcia-Alonso Garcia, D.; Kessels, W.M.M.

    2012-01-01

    Atomic layer deposition (ALD) is a vapour-phase deposition technique capable of depositing high quality, uniform and conformal thin films at relatively low temperatures. These outstanding properties can be employed to face processing challenges for various types of next-generation solar cells;

  1. Atmospheric spatial atomic layer deposition of in-doped ZnO

    NARCIS (Netherlands)

    Illiberi, A.; Scherpenborg, R.; Roozeboom, F.; Poodt, P.

    2014-01-01

    Indium-doped zinc oxide (ZnO:In) has been grown by spatial atomic layer deposition at atmospheric pressure (spatial-ALD). Trimethyl indium (TMIn), diethyl zinc (DEZ) and deionized water have been used as In, Zn and O precursor, respectively. The metal content of the films is controlled in the range

  2. Growth and characterization of titanium oxide by plasma enhanced atomic layer deposition

    KAUST Repository

    Zhao, Chao; Hedhili, Mohamed N.; Li, Jingqi; Wang, Qingxiao; Yang, Yang; Chen, Long; LI, LIANG

    2013-01-01

    The growth of TiO2 films by plasma enhanced atomic layer deposition using Star-Ti as a precursor has been systematically studied. The conversion from amorphous to crystalline TiO2 was observed either during high temperature growth or annealing

  3. Electrocatalytic activity of atomic layer deposited Pt-Ru catalysts onto N-doped carbon nanotubes

    NARCIS (Netherlands)

    Johansson, A.-C.; Larsen, J.V.; Verheijen, M.A.; Haugshøj, K.B.; Clausen, H.; Kessels, W.M.M.; Christensen, L.H.; Thomsen, E.V.

    2014-01-01

    Pt-Ru catalysts of various compositions, between 0 and 100 at.% of Ru, were deposited onto N-doped multi-walled carbon nanotubes (N-CNTs) by atomic layer deposition (ALD) at 250 C. The Pt and Ru precursors were trimethyl(methylcyclopentadienyl)platinum (MeCpPtMe3) and

  4. Atomic-scale structure of single-layer MoS2 nanoclusters

    DEFF Research Database (Denmark)

    Helveg, S.; Lauritsen, J. V.; Lægsgaard, E.

    2000-01-01

    We have studied using scanning tunneling microscopy (STM) the atomic-scale realm of molybdenum disulfide (MoS2) nanoclusters, which are of interest as a model system in hydrodesulfurization catalysis. The STM gives the first real space images of the shape and edge structure of single-layer MoS2...

  5. Atomic-layer deposited passivation schemes for c-Si solar cells

    NARCIS (Netherlands)

    van de Loo, B.W.H.; Macco, B.; Melskens, J.; Verheijen, M.A.; Kessels, W.M.M.E.

    2016-01-01

    A review of recent developments in the field of passivation of c-Si surfaces is presented, with a particular focus on materials that can be prepared by atomic layer deposition (ALD). Besides Al2O3, various other novel passivation schemes have recently been developed, such as Ga2O3, Ta2O5,

  6. Low temperature growth of gallium oxide thin films via plasma enhanced atomic layer deposition

    NARCIS (Netherlands)

    O'Donoghue, R.; Rechmann, J.; Aghaee, M.; Rogalla, D.; Becker, H.-W.; Creatore, M.; Wieck, A.D.; Devi, A.P.K.

    2017-01-01

    Herein we describe an efficient low temperature (60–160 °C) plasma enhanced atomic layer deposition (PEALD) process for gallium oxide (Ga2O3) thin films using hexakis(dimethylamido)digallium [Ga(NMe2)3]2 with oxygen (O2) plasma on Si(100). The use of O2 plasma was found to have a significant

  7. History of atomic layer deposition and its relationship with the American Vacuum Society

    NARCIS (Netherlands)

    Parsons, G.N.; Elam, J.W.; George, S.M.; Haukka, S.; Jeon, H.; Kessels, W.M.M.; Leskelä, M.; Poodt, P.; Ritala, M.; Rossnagel, S.M.

    2013-01-01

    This article explores the history of atomic layer deposition (ALD) and its relationship with the American Vacuum Society (AVS). The authors describe the origin and history of ALD science in the 1960s and 1970s. They also report on how the science and technology of ALD progressed through the 1990s

  8. Surface reactions during atomic layer deposition of Pt derived from gas phase infrared spectroscopy

    NARCIS (Netherlands)

    Kessels, W.M.M.; Knoops, H.C.M.; Dielissen, S.A.F.; Mackus, A.J.M.; Sanden, van de M.C.M.

    2009-01-01

    Infrared spectroscopy was used to obtain absolute number information on the reaction products during atomic layer deposition of Pt from (methylcyclopentadienyl)trimethylplatinum [(MeCp)PtMe3] and O2. From the detection of CO2 and H2O it was established that the precursor ligands are oxidatively

  9. Electrochemical corrosion behavior of gas atomized Al–Ni alloy powders

    International Nuclear Information System (INIS)

    Osório, Wislei R.; Spinelli, José E.; Afonso, Conrado R.M.; Peixoto, Leandro C.; Garcia, Amauri

    2012-01-01

    Highlights: ► Spray-formed Al–Ni alloy powders have cellular microstructures. ► Porosity has no deleterious effect on the electrochemical corrosion behavior. ► Better pitting corrosion resistance is related to a fine powder microstructure. ► A coarse microstructure can be related to better general corrosion resistance. - Abstract: This is a study describing the effects of microstructure features of spray-formed Al–Ni alloy powders on the electrochemical corrosion resistance. Two different spray-formed powders were produced using nitrogen (N 2 ) gas flow (4 and 8 bar were used). Electrochemical impedance spectroscopy (EIS), potentiodynamic anodic polarization techniques and an equivalent circuit analysis were used to evaluate the electrochemical behavior in a dilute 0.05 M NaCl solution at room temperature. It was found that a N 2 gas pressure of 8 bar resulted in a microstructure characterized by a high fraction of small powders and fine cell spacings, having improved pitting potential but higher corrosion current density when compared with the corresponding results of a coarser microstructure array obtained under a lower pressure. A favorable effect in terms of current density and oxide protective film formation was shown to be associated with the coarser microstructure, however, its pitting potential was found to be lower than that of the finer microstructure.

  10. Boron and Nitrogen Codoped Carbon Layers of LiFePO4 Improve the High-Rate Electrochemical Performance for Lithium Ion Batteries.

    Science.gov (United States)

    Zhang, Jinli; Nie, Ning; Liu, Yuanyuan; Wang, Jiao; Yu, Feng; Gu, Junjie; Li, Wei

    2015-09-16

    An evolutionary composite of LiFePO4 with nitrogen and boron codoped carbon layers was prepared by processing hydrothermal-synthesized LiFePO4. This novel codoping method is successfully applied to LiFePO4 for commercial use, and it achieved excellent electrochemical performance. The electrochemical performance can be improved through single nitrogen doping (LiFePO4/C-N) or boron doping (LiFePO4/C-B). When modifying the LiFePO4/C-B with nitrogen (to synthesis LiFePO4/C-B+N) the undesired nonconducting N-B configurations (190.1 and 397.9 eV) are generated. This decreases the electronic conductivity from 2.56×10(-2) to 1.30×10(-2) S cm(-1) resulting in weak electrochemical performance. Nevertheless, using the opposite order to decorate LiFePO4/C-N with boron (to obtain LiFePO4/C-N+B) not only eliminates the nonconducting N-B impurity, but also promotes the conductive C-N (398.3, 400.3, and 401.1 eV) and C-B (189.5 eV) configurations-this markedly improves the electronic conductivity to 1.36×10(-1) S cm(-1). Meanwhile the positive doping strategy leads to synergistic electrochemical activity distinctly compared with single N- or B-doped materials (even much better than their sum capacity at 20 C). Moreover, due to the electron and hole-type carriers donated by nitrogen and boron atoms, the N+B codoped carbon coating tremendously enhances the electrochemical property: at the rate of 20 C, the codoped sample can elevate the discharge capacity of LFP/C from 101.1 mAh g(-1) to 121.6 mAh g(-1), and the codoped product based on commercial LiFePO4/C shows a discharge capacity of 78.4 mAh g(-1) rather than 48.1 mAh g(-1). Nevertheless, the B+N codoped sample decreases the discharge capacity of LFP/C from 101.1 mAh g(-1) to 95.4 mAh g(-1), while the commercial LFP/C changes from 48.1 mAh g(-1) to 40.6 mAh g(-1).

  11. Deposition of O atomic layers on Si(100) substrates for epitaxial Si-O superlattices: investigation of the surface chemistry

    Energy Technology Data Exchange (ETDEWEB)

    Jayachandran, Suseendran, E-mail: suseendran.jayachandran@imec.be [KU Leuven, Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Delabie, Annelies; Billen, Arne [KU Leuven, Department of Chemistry, Celestijnenlaan 200F, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Dekkers, Harold; Douhard, Bastien; Conard, Thierry; Meersschaut, Johan; Caymax, Matty [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Vandervorst, Wilfried [KU Leuven, Department of Physics and Astronomy, Celestijnenlaan 200D, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Heyns, Marc [KU Leuven, Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium)

    2015-01-01

    Highlights: • Atomic layer is deposited by O{sub 3} chemisorption reaction on H-terminated Si(100). • O-content has critical impact on the epitaxial thickness of the above-deposited Si. • Oxygen atoms at dimer/back bond configurations enable epitaxial Si on O atomic layer. • Oxygen atoms at hydroxyl and more back bonds, disable epitaxial Si on O atomic layer. - Abstract: Epitaxial Si-O superlattices consist of alternating periods of crystalline Si layers and atomic layers of oxygen (O) with interesting electronic and optical properties. To understand the fundamentals of Si epitaxy on O atomic layers, we investigate the O surface species that can allow epitaxial Si chemical vapor deposition using silane. The surface reaction of ozone on H-terminated Si(100) is used for the O deposition. The oxygen content is controlled precisely at and near the atomic layer level and has a critical impact on the subsequent Si deposition. There exists only a small window of O-contents, i.e. 0.7–0.9 atomic layers, for which the epitaxial deposition of Si can be realized. At these low O-contents, the O atoms are incorporated in the Si-Si dimers or back bonds (-OSiH), with the surface Si atoms mainly in the 1+ oxidation state, as indicated by infrared spectroscopy. This surface enables epitaxial seeding of Si. For O-contents higher than one atomic layer, the additional O atoms are incorporated in the Si-Si back bonds as well as in the Si-H bonds, where hydroxyl groups (-Si-OH) are created. In this case, the Si deposition thereon becomes completely amorphous.

  12. Atomic layer deposition grown composite dielectric oxides and ZnO for transparent electronic applications

    International Nuclear Information System (INIS)

    Gieraltowska, S.; Wachnicki, L.; Witkowski, B.S.; Godlewski, M.; Guziewicz, E.

    2012-01-01

    In this paper, we report on transparent transistor obtained using laminar structure of two high-k dielectric oxides (hafnium dioxide, HfO 2 and aluminum oxide, Al 2 O 3 ) and zinc oxide (ZnO) layer grown at low temperature (60 °C–100 °C) using Atomic Layer Deposition (ALD) technology. Our research was focused on the optimization of technological parameters for composite layers Al 2 O 3 /HfO 2 /Al 2 O 3 for thin film transistor structures with ZnO as a channel and a gate layer. We elaborate on the ALD growth of these oxides, finding that the 100 nm thick layers of HfO 2 and Al 2 O 3 exhibit fine surface flatness and required amorphous microstructure. Growth parameters are optimized for the monolayer growth mode and maximum smoothness required for gating.

  13. Influence of electrical parameters on morphology of nanostructured TiO2 layers developed by electrochemical anodization

    Directory of Open Access Journals (Sweden)

    Strnad Gabriela

    2017-01-01

    Full Text Available Ti6Al4V alloy micro rough surfaces with TiO2 self-organized nanostructured layers were synthesized using electrochemical anodization in phosphate/fluoride electrolyte, at different end potentials (5V, 10V, 15V, and 20 V. The current – time characteristics were recorded, and the link between current evolution and the morphology of developing oxide layers was investigated. On flat surfaces of Ti6Al4V alloy we developed TiO2 layers with different morphologies (random pores, nanopores of 25…50 nm, and highly organized nanotubes of 50…100 nm in diameter depending on electrical parameters of anodization process. In our anodization cell, in optimized conditions, we are able to superimpose nanostructured oxide layers (nanotubular or nanoporous over micro structured surfaces of titanium based materials used for biomedical implants.

  14. Molecular dynamics simulation of chemical sputtering of hydrogen atom on layer structured graphite

    International Nuclear Information System (INIS)

    Ito, A.; Wang, Y.; Irle, S.; Morokuma, K.; Nakamura, H.

    2008-10-01

    Chemical sputtering of hydrogen atom on graphite was simulated using molecular dynamics. Especially, the layer structure of the graphite was maintained by interlayer intermolecular interaction. Three kinds of graphite surfaces, flat (0 0 0 1) surface, armchair (1 1 2-bar 0) surface and zigzag (1 0 1-bar 0) surface, are dealt with as targets of hydrogen atom bombardment. In the case of the flat surface, graphene layers were peeled off one by one and yielded molecules had chain structures. On the other hand, C 2 H 2 and H 2 are dominant yielded molecules on the armchair and zigzag surfaces, respectively. In addition, the interaction of a single hydrogen isotope on a single graphene is investigated. Adsorption, reflection and penetration rates are obtained as functions of incident energy and explain hydrogen retention on layered graphite. (author)

  15. Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide.

    Science.gov (United States)

    Timm, Rainer; Head, Ashley R; Yngman, Sofie; Knutsson, Johan V; Hjort, Martin; McKibbin, Sarah R; Troian, Andrea; Persson, Olof; Urpelainen, Samuli; Knudsen, Jan; Schnadt, Joachim; Mikkelsen, Anders

    2018-04-12

    Atomic layer deposition (ALD) enables the ultrathin high-quality oxide layers that are central to all modern metal-oxide-semiconductor circuits. Crucial to achieving superior device performance are the chemical reactions during the first deposition cycle, which could ultimately result in atomic-scale perfection of the semiconductor-oxide interface. Here, we directly observe the chemical reactions at the surface during the first cycle of hafnium dioxide deposition on indium arsenide under realistic synthesis conditions using photoelectron spectroscopy. We find that the widely used ligand exchange model of the ALD process for the removal of native oxide on the semiconductor and the simultaneous formation of the first hafnium dioxide layer must be significantly revised. Our study provides substantial evidence that the efficiency of the self-cleaning process and the quality of the resulting semiconductor-oxide interface can be controlled by the molecular adsorption process of the ALD precursors, rather than the subsequent oxide formation.

  16. Ultra-trace determination of methylmercuy in seafood by atomic fluorescence spectrometry coupled with electrochemical cold vapor generation

    Energy Technology Data Exchange (ETDEWEB)

    Zu, Wenchuan, E-mail: zuhongshuai@126.com [Beijing Institute of Technology, College of Chemistry, Beijing 100081 (China); Beijing Center for Physical & Chemical Analysis, Beijing 100089 (China); Wang, Zhenghao [Beijing Normal University, College of Chemistry, Beijing 100875 (China)

    2016-03-05

    Highlights: • Methylmercury detection by ECVG-AFS without pre-separation by HPLC is proposed. • Methylmercury is atomized by direct electrochemical reduction with no reductant. • Remarkably better sensitivity is obtained than the traditional HPLC-UV-AFS method. • Glassy carbon is the best cathode material to generate Hg vapor from methylmercury. - Abstract: A homemade electrochemical flow cell was adopted for the determination of methylmercury. The cold vapor of mercury atoms was generated from the surface of glassycarbon cathode through the method of electrolytic reduction and detected by atomic fluorescence spectroscopy subsequently. The operating conditions were optimized with 2 ng mL{sup −1} methylmercury standard solution. The caliberation curve was favorably linear when the concentrations of standard HgCH{sub 3}{sup +} solutions were in the range of 0.2–5 ng mL{sup −1}(as Hg). Under the optimized conditions, the limit of detection (LOD) for methylmercury was 1.88 × 10{sup −3} ng mL{sup −1} and the precision evaluated by relative standard deviation was 2.0% for six times 2 ng mL{sup −1} standard solution replicates. The terminal analytical results of seafood samples, available from local market, showed that the methylmercury content ranged within 3.7–45.8 ng g{sup −1}. The recoveries for methylmercury spiked samples were found to be in the range of 87.6–103.6% and the relative standard deviations below 5% (n = 6)were acquired, which showed this method was feasible for real sample analysis.

  17. High-performance lithium-rich layered oxide materials: Effects of chelating agents on microstructure and electrochemical properties

    International Nuclear Information System (INIS)

    Li, Lingjun; Xu, Ming; Chen, Zhaoyong; Zhou, Xiang; Zhang, Qiaobao; Zhu, Huali; Wu, Chun; Zhang, Kaili

    2015-01-01

    The mechanisms and effects of three typical chelating agents, namely glucose, citric acid and sucrose on the sol-gel synthesis process, electrochemical degradation and structural evolution of 0.5Li 2 MnO 3 ·0.5LiNi 0.5 Co 0.2 Mn 0.3 O 2 (LLMO) materials are systematically compared for the first time. X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy analysis indicate that the sample synthesized from sucrose owns well structure, homogenous distribution, low Ni 3+ concentration and good surface structural stability during cycling, respectively. Electrochemical tests further prove that the LLMO material obtained from sucrose maintains 258.4 mAh g −1 with 94.8% capacity retention after 100 cycles at 0.2 C. The superior electrochemical performance can be ascribed to the exceptional complexing mechanism of sucrose, compared to those of the glucose and citric acid. Namely, one mole sucrose can be hydrolyzed into two different monosaccharides and further chelates three M (Li, Ni, Co and Mn) ions to form a more uniform ion-chelated matrix during sol-gel process. This discovery is an important step towards understanding the selection criterion of chelating agents for sol-gel method, that chelating agent with excellent complexing capability is beneficial to the distribution, structural stability and electrochemical properties of advanced lithium-rich layered materials

  18. Probing the characteristics of casein as green binder for non-aqueous electrochemical double layer capacitors' electrodes

    Science.gov (United States)

    Varzi, Alberto; Raccichini, Rinaldo; Marinaro, Mario; Wohlfahrt-Mehrens, Margret; Passerini, Stefano

    2016-09-01

    Casein from bovine milk is evaluated in this work as binding agent for electrochemical double layer capacitors (EDLCs) electrodes. It is demonstrated that casein provides excellent adhesion strength to the current collector (1187 kPa compared to 51 kPa achieved with PVdF), thus leading to mechanically stable electrodes. At the same time, it offers high thermal stability (above 200 °C) and electrochemical stability in organic electrolytes. Apparently though, the casein-based electrodes offer lower electronic conductivity than those based on other state-of-the-art binders, which can limit the rate performance of the resulting EDLC. In the attempt of improving the electrochemical performance, it is found that the application of a pressing step can solve this issue, leading to excellent rate capability (up to 84% capacitance retention at 50 mA cm-2) and cycling stability (96.8% after 10,000 cycles at 10 mA cm-2) in both PC- and ACN-based electrolytes. Although the adhesive power casein is known since ancient times, this report presents the first proof of concept of its employment in electrochemical power sources.

  19. Synthesis and electrochemical properties of nanosized LiFeO2 particles with a layered rocksalt structure for lithium batteries

    International Nuclear Information System (INIS)

    Hirayama, Masaaki; Tomita, Hiroki; Kubota, Kei; Ido, Hidekazu; Kanno, Ryoji

    2012-01-01

    Highlights: ► 40-nm-sized O3-LiFeO 2 exhibits higher discharge capacities and rate characteristics than 400-nm-sized O3-LiFeO 2 . ► The cation disorder of Li and Fe ions might have affected the electrochemical activity of the O3-LiFeO 2 nanoparticles. ► A phase change from a layered structure to a cubic structure during electrochemical cycling. ► The new cubic phase allowed a stable electrochemical reaction between 4.5 and 1.0 V. -- Abstract: Layered rocksalt-type LiFeO 2 particles (O3-LiFeO 2 ) with average particle sizes of ca. 40 and 400 nm were synthesized by an ion exchange reaction from α-NaFeO 2 precursors. X-ray diffraction (XRD) patterns and scanning electron microscopy (SEM) images confirmed the formation of nanosized O3-LiFeO 2 . 40-nm LiFeO 2 exhibited a higher discharge capacity (115 mAh g −1 ) than 400-nm LiFeO 2 (80 mAh g −1 ), and also had better rate characteristics. The downsizing effect and cation disorder between the lithium and iron layers may have improved the electrochemical activity of the LiFeO 2 particles. Transmission electron microscopy (TEM) observation indicated a phase transition from O3-LiFeO 2 to a cubic lattice system during the electrochemical process. The cubic lithium iron oxide exhibited stable electrochemical reactions based on the Fe 2+ /Fe 3+ and Fe 2+ /Fe 0 redox couples at voltages between 4.5 and 1.0 V. The discharge capacities of 40-nm LiFeO 2 were ca. 115, 210, and 390 mAh g −1 under cutoff voltages of 4.5–2.0 V, 4.5–1.5 V, and 4.5–1.0 V, respectively.

  20. Atomic-scale understanding of non-stoichiometry effects on the electrochemical performance of Ni-rich cathode materials

    Science.gov (United States)

    Kong, Fantai; Liang, Chaoping; Longo, Roberto C.; Zheng, Yongping; Cho, Kyeongjae

    2018-02-01

    As the next-generation high energy capacity cathode materials for Li-ion batteries, Ni-rich oxides face the problem of obtaining near-stoichiometric phases due to excessive Ni occupying Li sites. These extra-Ni-defects drastically affect the electrochemical performance. Despite of its importance, the fundamental correlation between such defects and the key electrochemical properties is still poorly understood. In this work, using density-functional-theory, we report a comprehensive study on the effects of non-stoichiometric phases on properties of Ni-rich layered oxides. For instance, extra-Ni-defects trigger charge disproportionation reaction within the system, alleviating the Jahn-Teller distortion of Ni3+ ions, which constitutes an important reason for their low formation energies. Kinetic studies of these defects reveal their immobile nature, creating a "pillar effect" that increases the structural stability. Ab initio molecular dynamics revealed Li depletion regions surrounding extra-Ni-defects, which are ultimate responsible for the arduous Li diffusion and re-intercalation, resulting in poor rate performance and initial capacity loss. Finally, the method with combination of high valence cation doping and ion-exchange synthesis is regarded as the most promising way to obtain stoichiometric oxides. Overall, this work not only deepens our understanding of non-stoichiometric Ni-rich layered oxides, but also enables further optimizations of high energy density cathode materials.

  1. ZnO: Hydroquinone superlattice structures fabricated by atomic/molecular layer deposition

    International Nuclear Information System (INIS)

    Tynell, Tommi; Karppinen, Maarit

    2014-01-01

    Here we employ atomic layer deposition in combination with molecular layer deposition to deposit crystalline thin films of ZnO interspersed with single layers of hydroquinone in an effort to create hybrid inorganic–organic superlattice structures. The ratio of the ZnO and hydroquinone deposition cycles is varied between 199:1 and 1:1, and the structure of the resultant thin films is verified with X-ray diffraction and reflectivity techniques. Clear evidence of the formation of a superlattice-type structure is observed in the X-ray reflectivity patterns and the presence of organic bonds in the films corresponding to the structure of hydroquinone is confirmed with Fourier transform infrared spectroscopy measurements. We anticipate that hybrid superlattice structures such as the ones described in this work have the potential to be of great importance for future applications where the precise control of different inorganic and organic layers in hybrid superlattice materials is required. - Highlights: • Inorganic–organic superlattices can be made by atomic/molecular layer deposition. • This is demonstrated here for ZnO and hydroquinone (HQ). • The ratio of the ZnO and HQ layers is varied between 199:1 and 14:1. • The resultant thin films are crystalline

  2. ZnO: Hydroquinone superlattice structures fabricated by atomic/molecular layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Tynell, Tommi; Karppinen, Maarit, E-mail: maarit.karppinen@aalto.fi

    2014-01-31

    Here we employ atomic layer deposition in combination with molecular layer deposition to deposit crystalline thin films of ZnO interspersed with single layers of hydroquinone in an effort to create hybrid inorganic–organic superlattice structures. The ratio of the ZnO and hydroquinone deposition cycles is varied between 199:1 and 1:1, and the structure of the resultant thin films is verified with X-ray diffraction and reflectivity techniques. Clear evidence of the formation of a superlattice-type structure is observed in the X-ray reflectivity patterns and the presence of organic bonds in the films corresponding to the structure of hydroquinone is confirmed with Fourier transform infrared spectroscopy measurements. We anticipate that hybrid superlattice structures such as the ones described in this work have the potential to be of great importance for future applications where the precise control of different inorganic and organic layers in hybrid superlattice materials is required. - Highlights: • Inorganic–organic superlattices can be made by atomic/molecular layer deposition. • This is demonstrated here for ZnO and hydroquinone (HQ). • The ratio of the ZnO and HQ layers is varied between 199:1 and 14:1. • The resultant thin films are crystalline.

  3. Two-Dimensional SnO Anodes with a Tunable Number of Atomic Layers for Sodium Ion Batteries

    KAUST Repository

    Zhang, Fan; Zhu, Jiajie; Zhang, Daliang; Schwingenschlö gl, Udo; Alshareef, Husam N.

    2017-01-01

    We have systematically changed the number of atomic layers stacked in 2D SnO nanosheet anodes and studied their sodium ion battery (SIB) performance. The results indicate that as the number of atomic SnO layers in a sheet decreases, both

  4. Preface: Special Topic on Atomic and Molecular Layer Processing: Deposition, Patterning, and Etching

    Science.gov (United States)

    Engstrom, James R.; Kummel, Andrew C.

    2017-02-01

    Thin film processing technologies that promise atomic and molecular scale control have received increasing interest in the past several years, as traditional methods for fabrication begin to reach their fundamental limits. Many of these technologies involve at their heart phenomena occurring at or near surfaces, including adsorption, gas-surface reactions, diffusion, desorption, and re-organization of near-surface layers. Moreover many of these phenomena involve not just reactions occurring under conditions of local thermodynamic equilibrium but also the action of energetic species including electrons, ions, and hyperthermal neutrals. There is a rich landscape of atomic and molecular scale interactions occurring in these systems that is still not well understood. In this Special Topic Issue of The Journal of Chemical Physics, we have collected recent representative examples of work that is directed at unraveling the mechanistic details concerning atomic and molecular layer processing, which will provide an important framework from which these fields can continue to develop. These studies range from the application of theory and computation to these systems to the use of powerful experimental probes, such as X-ray synchrotron radiation, probe microscopies, and photoelectron and infrared spectroscopies. The work presented here helps in identifying some of the major challenges and direct future activities in this exciting area of research involving atomic and molecular layer manipulation and fabrication.

  5. Electrochemical activation, voltage decay and hysteresis of Li-rich layered cathode probed by various cobalt content

    KAUST Repository

    Wu, Yingqiang

    2018-02-01

    The high capacity of Li-rich layered cathode materials have attracted great attention for the greater energy density lithium ion (Li-ion) batteries, but the understanding of knowledge associated with electrochemical behaviours are still needed to improve their performances further. In this study, different amount of Co content is designed in Li-rich layered compounds (0.5Li2MnO3·0.5LiMn0.5-xNi0.5-xCo2xO2, 0 ≤ x ≤ 0.2), and the stepwise electrochemical activation process is applied to explore the features. We discover that the substitution of Co3+ ions can accelerate the electrochemical activation of Li2MnO3 component, and the Co-doped compound delivers much higher capacities even they suffer an apparent voltage decay comparing to the Co-free one. Besides, a fast metal ions migration exists (e.g., from the metastable tetrahedral site to the lower energy cubic site) in initial dozens of cycles (e.g., 30 cycles at 0.1C); thereafter, they likely return to the original octahedral site, as demonstrated in the voltage decay and hysteresis analysis.

  6. XPS-nanocharacterization of organic layers electrochemically grafted on the surface of SnO{sub 2} thin films to produce a new hybrid material coating

    Energy Technology Data Exchange (ETDEWEB)

    Drevet, R., E-mail: richarddrevet@yahoo.fr [Univ. Paris Sud, SP2M-ICMMO, CNRS UMR 8182, Bât. 410, 91405 Orsay Cedex (France); Université d’Evry Val d’Essonne, LAMBE, CNRS-CEA UMR 8587, Boulevard François Mitterrand, 91025 Evry Cedex (France); Dragoé, D.; Barthés-Labrousse, M.G. [Univ. Paris Sud, SP2M-ICMMO, CNRS UMR 8182, Bât. 410, 91405 Orsay Cedex (France); Chaussé, A. [Université d’Evry Val d’Essonne, LAMBE, CNRS-CEA UMR 8587, Boulevard François Mitterrand, 91025 Evry Cedex (France); Andrieux, M. [Univ. Paris Sud, SP2M-ICMMO, CNRS UMR 8182, Bât. 410, 91405 Orsay Cedex (France)

    2016-10-30

    Graphical abstract: An innovative hybrid material layer is synthesized by combining two processes. SnO{sub 2} thin films are deposited by MOCVD on Si substrates and an organic layer made of carboxyphenyl moieties is electrochemically grafted by the reduction of a diazonium salt. XPS characterizations are carried out to assess the efficiency of the electrochemical grafting. Display Omitted - Highlights: • An innovative hybrid material layer is synthesized by combining two processes. • SnO{sub 2} thin films are deposited by MOCVD on Si substrates. • An organic layer is electrochemically grafted by the reduction of a diazonium salt. • The efficiency of the grafting is accurately assessed by XPS. • Three electrochemical grafting models are proposed. - Abstract: This work presents the synthesis and the characterization of hybrid material thin films obtained by the combination of two processes. The electrochemical grafting of organic layers made of carboxyphenyl moieties is carried out from the reduction of a diazonium salt on tin dioxide (SnO{sub 2}) thin films previously deposited on Si substrates by metal organic chemical vapor deposition (MOCVD). Since the MOCVD experimental parameters impact the crystal growth of the SnO{sub 2} layer (i.e. its morphology and its texturation), various electrochemical grafting models can occur, producing different hybrid materials. In order to evidence the efficiency of the electrochemical grafting of the carboxyphenyl moieties, X-ray Photoelectron Spectroscopy (XPS) is used to characterize the first nanometers in depth of the synthesized hybrid material layer. Then three electrochemical grafting models are proposed.

  7. Partially oxidized atomic cobalt layers for carbon dioxide electroreduction to liquid fuel

    Science.gov (United States)

    Gao, Shan; Lin, Yue; Jiao, Xingchen; Sun, Yongfu; Luo, Qiquan; Zhang, Wenhua; Li, Dianqi; Yang, Jinlong; Xie, Yi

    2016-01-01

    Electroreduction of CO2 into useful fuels, especially if driven by renewable energy, represents a potentially ‘clean’ strategy for replacing fossil feedstocks and dealing with increasing CO2 emissions and their adverse effects on climate. The critical bottleneck lies in activating CO2 into the CO2•- radical anion or other intermediates that can be converted further, as the activation usually requires impractically high overpotentials. Recently, electrocatalysts based on oxide-derived metal nanostructures have been shown to enable CO2 reduction at low overpotentials. However, it remains unclear how the electrocatalytic activity of these metals is influenced by their native oxides, mainly because microstructural features such as interfaces and defects influence CO2 reduction activity yet are difficult to control. To evaluate the role of the two different catalytic sites, here we fabricate two kinds of four-atom-thick layers: pure cobalt metal, and co-existing domains of cobalt metal and cobalt oxide. Cobalt mainly produces formate (HCOO-) during CO2 electroreduction; we find that surface cobalt atoms of the atomically thin layers have higher intrinsic activity and selectivity towards formate production, at lower overpotentials, than do surface cobalt atoms on bulk samples. Partial oxidation of the atomic layers further increases their intrinsic activity, allowing us to realize stable current densities of about 10 milliamperes per square centimetre over 40 hours, with approximately 90 per cent formate selectivity at an overpotential of only 0.24 volts, which outperforms previously reported metal or metal oxide electrodes evaluated under comparable conditions. The correct morphology and oxidation state can thus transform a material from one considered nearly non-catalytic for the CO2 electroreduction reaction into an active catalyst. These findings point to new opportunities for manipulating and improving the CO2 electroreduction properties of metal systems

  8. Relationship between structural properties and electrochemical characteristics of monolithic carbon xerogel-based electrochemical double-layer electrodes in aqueous and organic electrolytes

    Energy Technology Data Exchange (ETDEWEB)

    Zeller, Mario [Bavarian Center for Applied Energy Research e.V. (ZAE Bayern), Wuerzburg (Germany); Institute of Radiology, University Clinic, University of Wuerzburg (Germany); Lorrmann, Volker; Reichenauer, Gudrun; Wiener, Matthias [Bavarian Center for Applied Energy Research e.V. (ZAE Bayern), Wuerzburg (Germany); Pflaum, Jens [Bavarian Center for Applied Energy Research e.V. (ZAE Bayern), Wuerzburg (Germany); Department of Experimental Physics VI, Julius-Maximilians-University of Wuerzburg (Germany)

    2012-05-15

    The impact of the micropore width, external surface area, and meso-/macropore size on the charging performance of electrochemical double-layer capacitor (EDLC) electrodes is systematically investigated. Nonactivated carbon xerogels are used as model electrodes in aqueous and organic electrolytes. Monolithic porous model carbons with different structural parameters are prepared using a resorcinol-formaldehyde-based sol-gel process and subsequent pyrolysis of the organic precursors. Electrochemical properties are characterized by utilizing them as EDLC half-cells operated in aqueous and organic electrolytes, respectively. Experimental data derived for organic electrolytes reveals that the respective ions cannot enter the micropores within the skeleton of the meso- and macroporous carbons. Therefore the total capacitance is limited by the external surface formed by the interface between the meso-/macropores and the microporous carbon particles forming the xerogel skeleton. In contrast, for aqueous electrolytes the total capacitance solely depends on the total surface area, including interfaces at the micropore scale. For both types of electrolytes the charging rate of the electrodes is systematically enhanced when increasing the diameter of the carbon xerogel particles from 10 to 75 nm and the meso-/macropore size from 10 to 121 nm. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. TEM and ellipsometry studies of nanolaminate oxide films prepared using atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Mitchell, D.R.G. [Materials and Engineering Science, ANSTO, PMB 1, Menai, NSW 2234 (Australia)]. E-mail: drm@ansto.gov.au; Attard, D.J. [Materials and Engineering Science, ANSTO, PMB 1, Menai, NSW 2234 (Australia); Finnie, K.S. [Materials and Engineering Science, ANSTO, PMB 1, Menai, NSW 2234 (Australia); Triani, G. [Materials and Engineering Science, ANSTO, PMB 1, Menai, NSW 2234 (Australia); Barbe, C.J. [Materials and Engineering Science, ANSTO, PMB 1, Menai, NSW 2234 (Australia); Depagne, C. [Materials and Engineering Science, ANSTO, PMB 1, Menai, NSW 2234 (Australia); Bartlett, J.R. [Materials and Engineering Science, ANSTO, PMB 1, Menai, NSW 2234 (Australia)

    2005-04-30

    Nanolaminate oxide layers consisting of TiO{sub 2} and Al{sub 2}O{sub 3} have been deposited on silicon using atomic layer deposition (ALD). Characterisation of these films has been achieved by use of a range of modern transmission electron microscopy (TEM)-based techniques, including plasmon loss imaging, energy filtered imaging and scanning TEM (STEM) X-ray line profiling. These have shown that the target thickness of the individual layers in the nanolaminate structures (20 nm) has been met with a high degree of accuracy, that the layers are extremely flat and parallel and that the interfaces between the layers are compositionally abrupt. Localised crystallisation within the stacks, and responses to electron beam irradiation point to the presence of a stress gradient within the layers. The performance of ellipsometry in characterising multilayer stacks has been benchmarked against the TEM measurements. Errors in determination of individual layer thicknesses were found to increase with growing stack size, as expected given the increasing number of interfaces incorporated in each model. The most sophisticated model gave maximum deviations of {+-}4 nm from the TEM determined values for the 5- and 10-layer stacks.

  10. Fabrication of ultrathin multilayered superomniphobic nanocoatings by liquid flame spray, atomic layer deposition, and silanization

    Science.gov (United States)

    Sorvali, Miika; Vuori, Leena; Pudas, Marko; Haapanen, Janne; Mahlberg, Riitta; Ronkainen, Helena; Honkanen, Mari; Valden, Mika; Mäkelä, Jyrki M.

    2018-05-01

    Superomniphobic, i.e. liquid-repellent, surfaces have been an interesting area of research during recent years due to their various potential applications. However, producing such surfaces, especially on hard and resilient substrates like stainless steel, still remains challenging. We present a stepwise fabrication process of a multilayered nanocoating on a stainless steel substrate, consisting of a nanoparticle layer, a nanofilm, and a layer of silane molecules. Liquid flame spray was used to deposit a TiO2 nanoparticle layer as the bottom layer for producing a suitable surface structure. The interstitial Al2O3 nanofilm, fabricated by atomic layer deposition (ALD), stabilized the nanoparticle layer, and the topmost fluorosilane layer lowered the surface energy of the coating for enhanced omniphobicity. The coating was characterized with field emission scanning electron microscopy, focused ion beam scanning electron microscopy, x-ray photoelectron spectroscopy, contact angle (CA) and sliding angle (SA) measurements, and microscratch testing. The widely recognized requirements for superrepellency, i.e. CA > 150° and SA < 10°, were achieved for deioinized water, diiodomethane, and ethylene glycol. The mechanical stability of the coating could be varied by tuning the thickness of the ALD layer at the expense of repellency. To our knowledge, this is the thinnest superomniphobic coating reported so far, with the average thickness of about 70 nm.

  11. Fabrication of ultrathin multilayered superomniphobic nanocoatings by liquid flame spray, atomic layer deposition, and silanization.

    Science.gov (United States)

    Sorvali, Miika; Vuori, Leena; Pudas, Marko; Haapanen, Janne; Mahlberg, Riitta; Ronkainen, Helena; Honkanen, Mari; Valden, Mika; Mäkelä, Jyrki M

    2018-05-04

    Superomniphobic, i.e. liquid-repellent, surfaces have been an interesting area of research during recent years due to their various potential applications. However, producing such surfaces, especially on hard and resilient substrates like stainless steel, still remains challenging. We present a stepwise fabrication process of a multilayered nanocoating on a stainless steel substrate, consisting of a nanoparticle layer, a nanofilm, and a layer of silane molecules. Liquid flame spray was used to deposit a TiO 2 nanoparticle layer as the bottom layer for producing a suitable surface structure. The interstitial Al 2 O 3 nanofilm, fabricated by atomic layer deposition (ALD), stabilized the nanoparticle layer, and the topmost fluorosilane layer lowered the surface energy of the coating for enhanced omniphobicity. The coating was characterized with field emission scanning electron microscopy, focused ion beam scanning electron microscopy, x-ray photoelectron spectroscopy, contact angle (CA) and sliding angle (SA) measurements, and microscratch testing. The widely recognized requirements for superrepellency, i.e. CA > 150° and SA layer at the expense of repellency. To our knowledge, this is the thinnest superomniphobic coating reported so far, with the average thickness of about 70 nm.

  12. Atomic layer deposition of lithium phosphates as solid-state electrolytes for all-solid-state microbatteries

    International Nuclear Information System (INIS)

    Wang, Biqiong; Liu, Jian; Sun, Qian; Li, Ruying; Sun, Xueliang; Sham, Tsun-Kong

    2014-01-01

    Atomic layer deposition (ALD) has been shown as a powerful technique to build three-dimensional (3D) all-solid-state microbattery, because of its unique advantages in fabricating uniform and pinhole-free thin films in 3D structures. The development of solid-state electrolyte by ALD is a crucial step to achieve the fabrication of 3D all-solid-state microbattery by ALD. In this work, lithium phosphate solid-state electrolytes were grown by ALD at four different temperatures (250, 275, 300, and 325 °C) using two precursors (lithium tert-butoxide and trimethylphosphate). A linear dependence of film thickness on ALD cycle number was observed and uniform growth was achieved at all four temperatures. The growth rate was 0.57, 0.66, 0.69, and 0.72 Å/cycle at deposition temperatures of 250, 275, 300, and 325 °C, respectively. Furthermore, x-ray photoelectron spectroscopy confirmed the compositions and chemical structures of lithium phosphates deposited by ALD. Moreover, the lithium phosphate thin films deposited at 300 °C presented the highest ionic conductivity of 1.73 × 10 −8 S cm −1 at 323 K with ∼0.51 eV activation energy based on the electrochemical impedance spectroscopy. The ionic conductivity was calculated to be 3.3 × 10 −8 S cm −1 at 26 °C (299 K). (paper)

  13. Bimetallic Nickel/Ruthenium Catalysts Synthesized by Atomic Layer Deposition for Low-Temperature Direct Methanol Solid Oxide Fuel Cells.

    Science.gov (United States)

    Jeong, Heonjae; Kim, Jun Woo; Park, Joonsuk; An, Jihwan; Lee, Tonghun; Prinz, Fritz B; Shim, Joon Hyung

    2016-11-09

    Nickel and ruthenium bimetallic catalysts were heterogeneously synthesized via atomic layer deposition (ALD) for use as the anode of direct methanol solid oxide fuel cells (DMSOFCs) operating in a low-temperature range. The presence of highly dispersed ALD Ru islands over a porous Ni mesh was confirmed, and the Ni/ALD Ru anode microstructure was observed. Fuel cell tests were conducted using Ni-only and Ni/ALD Ru anodes with approximately 350 μm thick gadolinium-doped ceria electrolytes and platinum cathodes. The performance of fuel cells was assessed using pure methanol at operating temperatures of 300-400 °C. Micromorphological changes of the anode after cell operation were investigated, and the content of adsorbed carbon on the anode side of the operated samples was measured. The difference in the maximum power density between samples utilizing Ni/ALD Ru and Pt/ALD Ru, the latter being the best catalyst for direct methanol fuel cells, was observed to be less than 7% at 300 °C and 30% at 350 °C. The improved electrochemical activity of the Ni/ALD Ru anode compared to that of the Ni-only anode, along with the reduction of the number of catalytically active sites due to agglomeration of Ni and carbon formation on the Ni surface as compared to Pt, explains this decent performance.

  14. Promoting Effect of Layered Titanium Phosphate on the Electrochemical and Photovoltaic Performance of Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Deng Changsheng

    2010-01-01

    Full Text Available Abstract We reported a composite electrolyte prepared by incorporating layered α-titanium phosphate (α-TiP into an iodide-based electrolyte using 1-ethyl-3-methylimidazolium tetrafluoroborate(EmimBF4 ionic liquid as solvent. The obtained composite electrolyte exhibited excellent electrochemical and photovoltaic properties compared to pure ionic liquid electrolyte. Both the diffusion coefficient of triiodide (I3 − in the electrolyte and the charge-transfer reaction at the electrode/electrolyte interface were improved markedly. The mechanism for the enhanced electrochemical properties of the composite electrolyte was discussed. The highest conversion efficiency of dye-sensitized solar cell (DSSC was obtained for the composite electrolyte containing 1wt% α-TiP, with an improvement of 58% in the conversion efficiency than the blank one, which offered a broad prospect for the fabrication of stable DSSCs with a high conversion efficiency.

  15. Highly Durable Platinum Single-Atom Alloy Catalyst for Electrochemical Reactions

    DEFF Research Database (Denmark)

    Kim, Jiwhan; Roh, Chi-Woo; Sahoo, Suman Kalyan

    2018-01-01

    Single atomic Pt catalyst can offer efficient utilization of the expensive platinum and provide unique selectivity because it lacks ensemble sites. However, designing such a catalyst with high Pt loading and good durability is very challenging. Here, single atomic Pt catalyst supported on antimony...... functional theory calculations show that replacing Sb sites with Pt atoms in the bulk phase or at the surface of SbSn or ATO is energetically favorable. The Pt1/ATO shows superior activity and durability for formic acid oxidation reaction, compared to a commercial Pt/C catalyst. The single atomic Pt...... structure is retained even after a harsh durability test, which is performed by repeating cyclic voltammetry in the range of 0.05–1.4 V for 1800 cycles. A full cell is fabricated for direct formic acid fuel cell using the Pt1/ATO as an anode catalyst, and an order of magnitude higher cell power is obtained...

  16. Magnetic resonance of rubidium atoms passing through a multi-layered transmission magnetic grating

    International Nuclear Information System (INIS)

    Nagata, Y; Kurokawa, S; Hatakeyama, A

    2017-01-01

    We measured the magnetic resonance of rubidium atoms passing through periodic magnetic fields generated by two types of multi-layered transmission magnetic grating. One of the gratings reported here was assembled by stacking four layers of magnetic films so that the direction of magnetization alternated at each level. The other grating was assembled so that the magnetization at each level was aligned. For both types of grating, the experimental results were in good agreement with our calculations. We studied the feasibility of extending the frequency band of the grating and narrowing its resonance linewidth by performing calculations. For magnetic resonance precision spectroscopy, we conclude that the multi-layered transmission magnetic grating can generate periodic fields with narrower linewidths at higher frequencies when a larger number of layers are assembled at a shorter period length. Moreover, the frequency band of this type of grating can potentially achieve frequencies of up to hundreds of PHz. (paper)

  17. Scalable control program for multiprecursor flow-type atomic layer deposition system

    Energy Technology Data Exchange (ETDEWEB)

    Selvaraj, Sathees Kannan [Department of Chemical Engineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States); Takoudis, Christos G., E-mail: takoudis@uic.edu [Department of Chemical Engineering, University of Illinois at Chicago, Chicago, Illinois 60607 and Department of Bioengineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States)

    2015-01-01

    The authors report the development and implementation of a scalable control program to control flow type atomic layer deposition (ALD) reactor with multiple precursor delivery lines. The program logic is written and tested in LABVIEW environment to control ALD reactor with four precursor delivery lines to deposit up to four layers of different materials in cyclic manner. The programming logic is conceived such that to facilitate scale up for depositing more layers with multiple precursors and scale down for using single layer with any one precursor in the ALD reactor. The program takes precursor and oxidizer exposure and purging times as input and controls the sequential opening and closing of the valves to facilitate the complex ALD process in cyclic manner. The program could be used to deposit materials from any single line or in tandem with other lines in any combination and in any sequence.

  18. Electrochemical Modeling and Performance of a Lithium- and Manganese-Rich Layered Transition-Metal Oxide Positive Electrode

    Energy Technology Data Exchange (ETDEWEB)

    Dees, Dennis W.; Abraham, Daniel P; Lu, Wenquan; Gallagher, Kevin G.; Bettge, Martin; Jansen, Andrew N

    2015-01-21

    The impedance of a lithium- and manganese-rich layered transition-metal oxide (MR-NMC) positive electrode, specifically Li1.2Ni0.15Mn0.55Co0.1O2, is compared to two other transition-metal layered oxide materials, specifically LiNi0.8Co0.15Al0.05O2 (NCA) and Li1.05(Ni1/3Co1/3Mn1/3)0.95O2 (NMC). A more detailed electrochemical impedance spectroscopy (EIS) study is conducted on the LMR-NMC electrode, which includes a range of states-of-charge (SOCs) for both current directions (i.e. charge and discharge) and two relaxation times (i.e. hours and one hundred hours) before the EIS sweep. The LMR-NMC electrode EIS studies are supported by half-cell constant current and galvanostatic intermittent titration technique (GITT) studies. Two types of electrochemical models are utilized to examine the results. The first type is a lithium ion cell electrochemical model for intercalation active material electrodes that includes a complex active material/electrolyte interfacial structure. In conclusion, the other is a lithium ion half-cell electrochemical model that focuses on the unique composite structure of the bulk LMR-NMC materials.

  19. 2D-PES/XAS method for atomic-layer-resolved magnetic structure analysis

    International Nuclear Information System (INIS)

    Matsui, F.; Daimon, H.; Matsushita, T.; Guo, F.Z.

    2008-01-01

    Photoelectron and Auger electron angular distributions from a localized core level provide information on atomic configurations. Forward-focusing peaks indicate the directions of atoms surrounding the excited atom. X-ray absorption fine structure and X-ray magnetic circular dichroism measurements by Auger electron yield detection on the other hand are excellent methods for studying of the electronic and magnetic structures of surfaces, adsorbates, and thin films. However, all the information from atoms within the electron mean-free-path region is averaged into the obtained spectra. Here, we introduce a new method of X-ray absorption spectroscopy (XAS) combined with measurements of Auger electron angular distribution using a display-type analyzer. Taking advantage of the forward-focusing peak as an excellent element- and site-selective probe, 2D-XAS enables direct access to the individual electronic and magnetic structures of each atomic layer. This method was applied to studying the electronic and magnetic structures of Ni thin film at atomic level. (author)

  20. Atomic layer MoS2-graphene van der Waals heterostructure nanomechanical resonators.

    Science.gov (United States)

    Ye, Fan; Lee, Jaesung; Feng, Philip X-L

    2017-11-30

    Heterostructures play significant roles in modern semiconductor devices and micro/nanosystems in a plethora of applications in electronics, optoelectronics, and transducers. While state-of-the-art heterostructures often involve stacks of crystalline epi-layers each down to a few nanometers thick, the intriguing limit would be hetero-atomic-layer structures. Here we report the first experimental demonstration of freestanding van der Waals heterostructures and their functional nanomechanical devices. By stacking single-layer (1L) MoS 2 on top of suspended single-, bi-, tri- and four-layer (1L to 4L) graphene sheets, we realize an array of MoS 2 -graphene heterostructures with varying thickness and size. These heterostructures all exhibit robust nanomechanical resonances in the very high frequency (VHF) band (up to ∼100 MHz). We observe that fundamental-mode resonance frequencies of the heterostructure devices fall between the values of graphene and MoS 2 devices. Quality (Q) factors of heterostructure resonators are lower than those of graphene but comparable to those of MoS 2 devices, suggesting interface damping related to interlayer interactions in the van der Waals heterostructures. This study validates suspended atomic layer heterostructures as an effective device platform and provides opportunities for exploiting mechanically coupled effects and interlayer interactions in such devices.

  1. Reliably counting atomic planes of few-layer graphene (n > 4).

    Science.gov (United States)

    Koh, Yee Kan; Bae, Myung-Ho; Cahill, David G; Pop, Eric

    2011-01-25

    We demonstrate a reliable technique for counting atomic planes (n) of few-layer graphene (FLG) on SiO(2)/Si substrates by Raman spectroscopy. Our approach is based on measuring the ratio of the integrated intensity of the G graphene peak and the optical phonon peak of Si, I(G)/I(Si), and is particularly useful in the range n > 4 where few methods exist. We compare our results with atomic force microscopy (AFM) measurements and Fresnel equation calculations. Then, we apply our method to unambiguously identify n of FLG devices on SiO(2) and find that the mobility (μ ≈ 2000 cm(2) V(-1) s(-1)) is independent of layer thickness for n > 4. Our findings suggest that electrical transport in gated FLG devices is dominated by carriers near the FLG/SiO(2) interface and is thus limited by the environment, even for n > 4.

  2. Hydrothermal crystallization of amorphous titania films deposited using low temperature atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Mitchell, D.R.G. [Institute of Materials Engineering, ANSTO, PMB 1, Menai, NSW 2234 (Australia)], E-mail: drm@ansto.gov.au; Triani, G.; Zhang, Z. [Institute of Materials Engineering, ANSTO, PMB 1, Menai, NSW 2234 (Australia)

    2008-10-01

    A two stage process (atomic layer deposition, followed by hydrothermal treatment) for producing crystalline titania thin films at temperatures compatible with polymeric substrates (< 130 deg. C) has been assessed. Titania thin films were deposited at 80 deg. C using atomic layer deposition. They were extremely flat, uniform and almost entirely amorphous. They also contained relatively high levels of residual Cl from the precursor. After hydrothermal treatment at 120 deg. C for 1 day, > 50% of the film had crystallized. Crystallization was complete after 10 days of hydrothermal treatment. Crystallization of the film resulted in the formation of coarse grained anatase. Residual Cl was completely expelled from the film upon crystallization. As a result of the amorphous to crystalline transformation voids formed at the crystallization front. Inward and lateral crystal growth resulted in voids being localized to the film/substrate interface and crystallite perimeters resulting in pinholing. Both these phenomena resulted in films with poor adhesion and film integrity was severely compromised.

  3. Evolution of microstructure and related optical properties of ZnO grown by atomic layer deposition

    Directory of Open Access Journals (Sweden)

    Adib Abou Chaaya

    2013-10-01

    Full Text Available A study of transmittance and photoluminescence spectra on the growth of oxygen-rich ultra-thin ZnO films prepared by atomic layer deposition is reported. The structural transition from an amorphous to a polycrystalline state is observed upon increasing the thickness. The unusual behavior of the energy gap with thickness reflected by optical properties is attributed to the improvement of the crystalline structure resulting from a decreasing concentration of point defects at the growth of grains. The spectra of UV and visible photoluminescence emissions correspond to transitions near the band-edge and defect-related transitions. Additional emissions were observed from band-tail states near the edge. A high oxygen ratio and variable optical properties could be attractive for an application of atomic layer deposition (ALD deposited ultrathin ZnO films in optical sensors and biosensors.

  4. Ultrafast atomic layer-by-layer oxygen vacancy-exchange diffusion in double-perovskite LnBaCo2O5.5+δ thin films.

    Science.gov (United States)

    Bao, Shanyong; Ma, Chunrui; Chen, Garry; Xu, Xing; Enriquez, Erik; Chen, Chonglin; Zhang, Yamei; Bettis, Jerry L; Whangbo, Myung-Hwan; Dong, Chuang; Zhang, Qingyu

    2014-04-22

    Surface exchange and oxygen vacancy diffusion dynamics were studied in double-perovskites LnBaCo2O5.5+δ (LnBCO) single-crystalline thin films (Ln = Er, Pr; -0.5 atoms in the LnBCO thin films is taking the layer by layer oxygen-vacancy-exchange mechanism. The first principles density functional theory calculations indicate that hydrogen atoms are present in LnBCO as bound to oxygen forming O-H bonds. This unprecedented oscillation phenomenon provides the first direct experimental evidence of the layer by layer oxygen vacancy exchange diffusion mechanism.

  5. Method to determine the sticking coefficient of precursor molecules in atomic layer deposition

    International Nuclear Information System (INIS)

    Rose, M.; Bartha, J.W.

    2009-01-01

    A method to determine the sticking coefficient of precursor molecules used in atomic layer deposition (ALD) will be introduced. The sticking coefficient is an interesting quantity for comparing different ALD processes and reactors but it cannot be observed easily. The method relies on free molecular flow in nanoscale cylindrical holes. The sticking coefficient is determined for tetrakis(dimethylamino)titanium in combination with ozone. The proposed method can be applied independent of the type of reactor, precursor delivery system and precursors.

  6. Dispersion engineering of thick high-Q silicon nitride ring-resonators via atomic layer deposition.

    Science.gov (United States)

    Riemensberger, Johann; Hartinger, Klaus; Herr, Tobias; Brasch, Victor; Holzwarth, Ronald; Kippenberg, Tobias J

    2012-12-03

    We demonstrate dispersion engineering of integrated silicon nitride based ring resonators through conformal coating with hafnium dioxide deposited on top of the structures via atomic layer deposition. Both, magnitude and bandwidth of anomalous dispersion can be significantly increased. The results are confirmed by high resolution frequency-comb-assisted-diode-laser spectroscopy and are in very good agreement with the simulated modification of the mode spectrum.

  7. Electrochemical studies of iron/carbonates system applied to the formation of thin layers of siderite on inert substrates

    International Nuclear Information System (INIS)

    Ithurbide, A.; Peulon, S.; Mandin, Ph.; Beaucaire, C.; Chausse, A.

    2007-01-01

    In order to understand the complex mechanisms of the reactions occurring, a methodology is developed. It is based on the use of compounds electrodeposited under the form of thin layers and which are used then as electrodes to study their interactions with the toxic species. It is in this framework that is studied the electrodeposition of siderite on inert substrates. At first, have been studied iron electrochemical systems in carbonated solutions. These studies have been carried out with classical electrochemical methods (cyclic voltametry, amperometry) coupled to in-situ measurements: quartz microbalance, pH. Different compounds have been obtained under the form of homogeneous and adherent thin layers. The analyses of these depositions, by different ex-situ characterizations (XRD, IR, SEM, EDS..) have revealed particularly the presence of siderite. Then, the influence of several experimental parameters (substrate, potential, medium composition, temperature) on the characteristics of siderite thin layers has been studied. From these experimental results, models have been proposed. (O.M.)

  8. Studies on Me/Al-layered double hydroxides (Me = Ni and Co) as electrode materials for electrochemical capacitors

    International Nuclear Information System (INIS)

    Liu Xianming; Zhang Yihe; Zhang Xiaogang; Fu Shaoyun

    2004-01-01

    Me/Al-layered double hydroxides (Me=Ni and Co) prepared by the chemical co-precipitation method have been shown to be outstanding novel materials for electrochemical capacitors. The crystalline structure and the electrochemical properties of the electrodes have been studied by considering the effect of the mole ratio of nickel/cobalt. X-ray diffraction analysis shows that the materials belong to hexagonal system with layered structure. Cyclic voltammetric measurements indicate that Me/Al-layered double hydroxides with the Ni/Co mole ratio of 4:6 exhibit excellent capacitive properties within the potential range of 0.0-0.6 V versus Hg/HgO in 6 mol/L KOH electrolyte. Charge/discharge behaviors have been observed with the highest specific capacitance values of 960 F/g at the current density of 400 mA/g. Impedance studies show that the enhanced electrical properties and high frequency response are attributed to the presence of Co oxides

  9. Thin films of copper oxide and copper grown by atomic layer deposition for applications in metallization systems of microelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Waechtler, Thomas

    2010-05-25

    Copper-based multi-level metallization systems in today's ultralarge-scale integrated electronic circuits require the fabrication of diffusion barriers and conductive seed layers for the electrochemical metal deposition. Such films of only several nanometers in thickness have to be deposited void-free and conformal in patterned dielectrics. The envisaged further reduction of the geometric dimensions of the interconnect system calls for coating techniques that circumvent the drawbacks of the well-established physical vapor deposition. The atomic layer deposition method (ALD) allows depositing films on the nanometer scale conformally both on three-dimensional objects as well as on large-area substrates. The present work therefore is concerned with the development of an ALD process to grow copper oxide films based on the metal-organic precursor bis(trin- butylphosphane)copper(I)acetylacetonate [({sup n}Bu{sub 3}P){sub 2}Cu(acac)]. This liquid, non-fluorinated {beta}-diketonate is brought to react with a mixture of water vapor and oxygen at temperatures from 100 to 160 C. Typical ALD-like growth behavior arises between 100 and 130 C, depending on the respective substrate used. On tantalum nitride and silicon dioxide substrates, smooth films and selfsaturating film growth, typical for ALD, are obtained. On ruthenium substrates, positive deposition results are obtained as well. However, a considerable intermixing of the ALD copper oxide with the underlying films takes place. Tantalum substrates lead to a fast self-decomposition of the copper precursor. As a consequence, isolated nuclei or larger particles are always obtained together with continuous films. The copper oxide films grown by ALD can be reduced to copper by vapor-phase processes. If formic acid is used as the reducing agent, these processes can already be carried out at similar temperatures as the ALD, so that agglomeration of the films is largely avoided. Also for an integration with subsequent

  10. Thin films of copper oxide and copper grown by atomic layer deposition for applications in metallization systems of microelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Waechtler, Thomas

    2010-05-25

    Copper-based multi-level metallization systems in today's ultralarge-scale integrated electronic circuits require the fabrication of diffusion barriers and conductive seed layers for the electrochemical metal deposition. Such films of only several nanometers in thickness have to be deposited void-free and conformal in patterned dielectrics. The envisaged further reduction of the geometric dimensions of the interconnect system calls for coating techniques that circumvent the drawbacks of the well-established physical vapor deposition. The atomic layer deposition method (ALD) allows depositing films on the nanometer scale conformally both on three-dimensional objects as well as on large-area substrates. The present work therefore is concerned with the development of an ALD process to grow copper oxide films based on the metal-organic precursor bis(trin- butylphosphane)copper(I)acetylacetonate [({sup n}Bu{sub 3}P){sub 2}Cu(acac)]. This liquid, non-fluorinated {beta}-diketonate is brought to react with a mixture of water vapor and oxygen at temperatures from 100 to 160 C. Typical ALD-like growth behavior arises between 100 and 130 C, depending on the respective substrate used. On tantalum nitride and silicon dioxide substrates, smooth films and selfsaturating film growth, typical for ALD, are obtained. On ruthenium substrates, positive deposition results are obtained as well. However, a considerable intermixing of the ALD copper oxide with the underlying films takes place. Tantalum substrates lead to a fast self-decomposition of the copper precursor. As a consequence, isolated nuclei or larger particles are always obtained together with continuous films. The copper oxide films grown by ALD can be reduced to copper by vapor-phase processes. If formic acid is used as the reducing agent, these processes can already be carried out at similar temperatures as the ALD, so that agglomeration of the films is largely avoided. Also for an integration with subsequent

  11. Atomic layer deposition on polymer based flexible packaging materials: Growth characteristics and diffusion barrier properties

    International Nuclear Information System (INIS)

    Kaeaeriaeinen, Tommi O.; Maydannik, Philipp; Cameron, David C.; Lahtinen, Kimmo; Johansson, Petri; Kuusipalo, Jurkka

    2011-01-01

    One of the most promising areas for the industrial application of atomic layer deposition (ALD) is for gas barrier layers on polymers. In this work, a packaging material system with improved diffusion barrier properties has been developed and studied by applying ALD on flexible polymer based packaging materials. Nanometer scale metal oxide films have been applied to polymer-coated papers and their diffusion barrier properties have been studied by means of water vapor and oxygen transmission rates. The materials for the study were constructed in two stages: the paper was firstly extrusion coated with polymer film, which was then followed by the ALD deposition of oxide layer. The polymers used as extrusion coatings were polypropylene, low and high density polyethylene, polylactide and polyethylene terephthalate. Water vapor transmission rates (WVTRs) were measured according to method SCAN-P 22:68 and oxygen transmission rates (O 2 TRs) according to a standard ASTM D 3985. According to the results a 10 nm oxide layer already decreased the oxygen transmission by a factor of 10 compared to uncoated material. WVTR with 40 nm ALD layer was better than the level currently required for most common dry flexible packaging applications. When the oxide layer thickness was increased to 100 nm and above, the measured WVTRs were limited by the measurement set up. Using an ALD layer allowed the polymer thickness on flexible packaging materials to be reduced. Once the ALD layer was 40 nm thick, WVTRs and O 2 TRs were no longer dependent on polymer layer thickness. Thus, nanometer scale ALD oxide layers have shown their feasibility as high quality diffusion barriers on flexible packaging materials.

  12. Atomic layer deposition on polymer based flexible packaging materials: Growth characteristics and diffusion barrier properties

    Energy Technology Data Exchange (ETDEWEB)

    Kaeaeriaeinen, Tommi O., E-mail: tommi.kaariainen@lut.f [ASTRaL, Lappeenranta University of Technology, Prikaatinkatu 3 E, 50100 Mikkeli (Finland); Maydannik, Philipp, E-mail: philipp.maydannik@lut.f [ASTRaL, Lappeenranta University of Technology, Prikaatinkatu 3 E, 50100 Mikkeli (Finland); Cameron, David C., E-mail: david.cameron@lut.f [ASTRaL, Lappeenranta University of Technology, Prikaatinkatu 3 E, 50100 Mikkeli (Finland); Lahtinen, Kimmo, E-mail: kimmo.lahtinen@tut.f [Tampere University of Technology, Paper Converting and Packaging Technology, P.O. Box 541, 33101 Tampere (Finland); Johansson, Petri, E-mail: petri.johansson@tut.f [Tampere University of Technology, Paper Converting and Packaging Technology, P.O. Box 541, 33101 Tampere (Finland); Kuusipalo, Jurkka, E-mail: jurkka.kuusipalo@tut.f [Tampere University of Technology, Paper Converting and Packaging Technology, P.O. Box 541, 33101 Tampere (Finland)

    2011-03-01

    One of the most promising areas for the industrial application of atomic layer deposition (ALD) is for gas barrier layers on polymers. In this work, a packaging material system with improved diffusion barrier properties has been developed and studied by applying ALD on flexible polymer based packaging materials. Nanometer scale metal oxide films have been applied to polymer-coated papers and their diffusion barrier properties have been studied by means of water vapor and oxygen transmission rates. The materials for the study were constructed in two stages: the paper was firstly extrusion coated with polymer film, which was then followed by the ALD deposition of oxide layer. The polymers used as extrusion coatings were polypropylene, low and high density polyethylene, polylactide and polyethylene terephthalate. Water vapor transmission rates (WVTRs) were measured according to method SCAN-P 22:68 and oxygen transmission rates (O{sub 2}TRs) according to a standard ASTM D 3985. According to the results a 10 nm oxide layer already decreased the oxygen transmission by a factor of 10 compared to uncoated material. WVTR with 40 nm ALD layer was better than the level currently required for most common dry flexible packaging applications. When the oxide layer thickness was increased to 100 nm and above, the measured WVTRs were limited by the measurement set up. Using an ALD layer allowed the polymer thickness on flexible packaging materials to be reduced. Once the ALD layer was 40 nm thick, WVTRs and O{sub 2}TRs were no longer dependent on polymer layer thickness. Thus, nanometer scale ALD oxide layers have shown their feasibility as high quality diffusion barriers on flexible packaging materials.

  13. Advanced Materials Enabled by Atomic Layer Deposition for High Energy Density Rechargeable Batteries

    Science.gov (United States)

    Chen, Lin

    In order to meet the ever increasing energy needs of society and realize the US Department of Energy (DOE)'s target for energy storage, acquiring a fundamental understanding of the chemical mechanisms in batteries for direct guidance and searching novel advanced materials with high energy density are critical. To realize rechargeable batteries with superior energy density, great cathodes and excellent anodes are required. LiMn2O4 (LMO) has been considered as a simpler surrogate for high energy cathode materials like NMC. Previous studies demonstrated that Al2O3 coatings prepared by atomic layer deposition (ALD) improved the capacity of LMO cathodes. This improvement was attributed to a reduction in surface area and diminished Mn dissolution. However, here we propose a different mechanism for ALD Al 2O3 on LMO based on in-situ and ex-situ investigations coupled with density functional theory calculations. We discovered that Al2O 3 not only coats the LMO, but also dopes the LMO surface with Al leading to changes in the Mn oxidation state. Different thicknesses of Al2O 3 were deposited on nonstoichiometric LiMn2O4 for electrochemical measurements. The LMO treated with one cycle of ALD Al2O3 (1xAl 2O3 LMO) to produce a sub-monolayer coating yielded a remarkable initial capacity, 16.4% higher than its uncoated LMO counterpart in full cells. The stability of 1xAl2O3 LMO is also much better as a result of stabilized defects with Al species. Furthermore, 4xAl 2O3 LMO demonstrates remarkable capacity retention. Stoichiometric LiMn2O4 was also evaluated with similar improved performance achieved. All superior results, accomplished by great stability and reduced Mn dissolution, is thanks to the synergetic effects of Al-doping and ALD Al2O 3 coating. Turning our attention to the anode, we again utilized aluminum oxide ALD to form conformal films on lithium. We elaborately designed and studied, for the first time, the growth mechanism during Al2O3 ALD on lithium metal in

  14. Two-dimensional ferroelectric topological insulators in functionalized atomically thin bismuth layers

    Science.gov (United States)

    Kou, Liangzhi; Fu, Huixia; Ma, Yandong; Yan, Binghai; Liao, Ting; Du, Aijun; Chen, Changfeng

    2018-02-01

    We introduce a class of two-dimensional (2D) materials that possess coexisting ferroelectric and topologically insulating orders. Such ferroelectric topological insulators (FETIs) occur in noncentrosymmetric atomic layer structures with strong spin-orbit coupling (SOC). We showcase a prototype 2D FETI in an atomically thin bismuth layer functionalized by C H2OH , which exhibits a large ferroelectric polarization that is switchable by a ligand molecule rotation mechanism and a strong SOC that drives a band inversion leading to the topologically insulating state. An external electric field that switches the ferroelectric polarization also tunes the spin texture in the underlying atomic lattice. Moreover, the functionalized bismuth layer exhibits an additional quantum order driven by the valley splitting at the K and K' points in the Brillouin zone stemming from the symmetry breaking and strong SOC in the system, resulting in a remarkable state of matter with the simultaneous presence of the quantum spin Hall and quantum valley Hall effect. These phenomena are predicted to exist in other similarly constructed 2D FETIs, thereby offering a unique quantum material platform for discovering novel physics and exploring innovative applications.

  15. Method of forming a leak proof plasma sprayed interconnection layer on an electrode of an electrochemical cell

    Science.gov (United States)

    Kuo, Lewis J. H.; Vora, Shailesh D.

    1995-01-01

    A dense, substantially gas-tight, electrically conductive interconnection layer is formed on an electrode structure of an electrochemical cell by: (A) providing an electrode structure; (B) forming on a selected portion of the electrode surface, an interconnection layer having the general formula La.sub.1-x M.sub.x Cr.sub.1-y N.sub.y O.sub.3, where M is a dopant selected from the group of Ca, Sr, Ba, and mixtures thereof, and where N is a dopant selected from the group of Mg, Co, Ni, Al, and mixtures thereof, and where x and y are each independently about 0.075-0.25, by thermally spraying, preferably plasma arc spraying, a flux added interconnection spray powder, preferably agglomerated, the flux added powder comprising flux particles, preferably including dopant, preferably (CaO).sub.12. (Al.sub.2 O.sub.3).sub.7 flux particles including Ca and Al dopant, and LaCrO.sub.3 interconnection particles, preferably undoped LaCrO.sub.3, to form a dense and substantially gas-tight interconnection material bonded to the electrode structure by a single plasma spraying step; and, (C) heat treating the interconnection layer at from about 1200.degree. to 1350.degree. C. to further densify and heal the micro-cracks and macro-cracks of the thermally sprayed interconnection layer. The result is a substantially gas-tight, highly doped, electrically conductive interconnection material bonded to the electrode structure. The electrode structure can be an air electrode, and a solid electrolyte layer can be applied to the unselected portion of the air electrode, and further a fuel electrode can be applied to the solid electrolyte, to form an electrochemical cell for generation of electrical power.

  16. Atomic Layer-Deposited Molybdenum Oxide/Carbon Nanotube Hybrid Electrodes: The Influence of Crystal Structure on Lithium-Ion Capacitor Performance.

    Science.gov (United States)

    Fleischmann, Simon; Zeiger, Marco; Quade, Antje; Kruth, Angela; Presser, Volker

    2018-05-25

    Merging of supercapacitors and batteries promises the creation of electrochemical energy storage devices that combine high specific energy, power, and cycling stability. For that purpose, lithium-ion capacitors (LICs) that store energy by lithiation reactions at the negative electrode and double-layer formation at the positive electrode are currently investigated. In this study, we explore the suitability of molybdenum oxide as a negative electrode material in LICs for the first time. Molybdenum oxide-carbon nanotube hybrid materials were synthesized via atomic layer deposition, and different crystal structures and morphologies were obtained by post-deposition annealing. These model materials are first structurally characterized and electrochemically evaluated in half-cells. Benchmarking in LIC full-cells revealed the influences of crystal structure, half-cell capacity, and rate handling on the actual device level performance metrics. The energy efficiency, specific energy, and power are mainly influenced by the overpotential and kinetics of the lithiation reaction during charging. Optimized LIC cells show a maximum specific energy of about 70 W·h·kg -1 and a high specific power of 4 kW·kg -1 at 34 W·h·kg -1 . The longevity of the LIC cells is drastically increased without significantly reducing the energy by preventing a deep cell discharge, hindering the negative electrode from crossing its anodic potential limit.

  17. Atomic layer deposition and etching methods for far ultraviolet aluminum mirrors

    Science.gov (United States)

    Hennessy, John; Moore, Christopher S.; Balasubramanian, Kunjithapatham; Jewell, April D.; Carter, Christian; France, Kevin; Nikzad, Shouleh

    2017-09-01

    High-performance aluminum mirrors at far ultraviolet wavelengths require transparent dielectric materials as protective coatings to prevent oxidation. Reducing the thickness of this protective layer can result in additional performance gains by minimizing absorption losses, and provides a path toward high Al reflectance in the challenging wavelength range of 90 to 110 nm. We have pursued the development of new atomic layer deposition processes (ALD) for the metal fluoride materials of MgF2, AlF3 and LiF. Using anhydrous hydrogen fluoride as a reactant, these films can be deposited at the low temperatures required for large-area surface-finished optics and polymeric diffraction gratings. We also report on the development and application of an atomic layer etching (ALE) procedure to controllably etch native aluminum oxide. Our ALE process utilizes the same chemistry used in the ALD of AlF3 thin films, allowing for a combination of high-performance evaporated Al layers and ultrathin ALD encapsulation without requiring vacuum transfer. Progress in demonstrating the scalability of this approach, as well as the environmental stability of ALD/ALE Al mirrors are discussed in the context of possible future applications for NASA LUVOIR and HabEx mission concepts.

  18. Ti–Al–O nanocrystal charge trapping memory cells fabricated by atomic layer deposition

    International Nuclear Information System (INIS)

    Cao, Zheng-Yi; Li, Ai-Dong; Li, Xin; Cao, Yan-Qiang; Wu, Di

    2014-01-01

    Charge trapping memory cells using Ti–Al–O (TAO) film as charge trapping layer and amorphous Al 2 O 3 as the tunneling and blocking layers were fabricated on Si substrates by atomic layer deposition method. As-deposited TAO films were annealed at 700 °C, 800 °C and 900 °C for 3 min in N 2 with a rapid thermal annealing process to form nanocrystals. High-resolution transmission electron microscopy and X-ray photoelectron spectroscopy were used to characterize the microstructure and band diagram of the heterostructures. The electrical characteristics and charge storage properties of the Al 2 O 3 /TAO/Al 2 O 3 /Si stack structures were also evaluated. Compared to 700 °C and 900 °C samples, the memory cells annealed at 800 °C exhibit better memory performance with larger memory window of 4.8 V at ± 6 V sweeping, higher program/erase speed and excellent endurance. - Highlights: • The charge trapping memory cells were fabricated by atomic layer deposition method. • The anneal temperature plays a key role in forming nanocrystals. • The memory cells annealed at 800 °C exhibit better memory performance. • The band alignment is beneficial to enhance the retention characteristics

  19. Conduction and stability of holmium titanium oxide thin films grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Castán, H., E-mail: helena@ele.uva.es [Department of Electronic, University of Valladolid, 47011 Valladolid (Spain); García, H.; Dueñas, S.; Bailón, L. [Department of Electronic, University of Valladolid, 47011 Valladolid (Spain); Miranda, E. [Departament d' Enginyería Electrònica, Universitat Autónoma de Barcelona, 08193 Bellaterra (Spain); Kukli, K. [Department of Chemistry, University of Helsinki, FI-00014 Helsinki (Finland); Institute of Physics, University of Tartu, EE-50411,Tartu (Estonia); Kemell, M.; Ritala, M.; Leskelä, M. [Department of Chemistry, University of Helsinki, FI-00014 Helsinki (Finland)

    2015-09-30

    Holmium titanium oxide (HoTiO{sub x}) thin films of variable chemical composition grown by atomic layer deposition are studied in order to assess their suitability as dielectric materials in metal–insulator–metal electronic devices. The correlation between thermal and electrical stabilities as well as the potential usefulness of HoTiO{sub x} as a resistive switching oxide are also explored. It is shown that the layer thickness and the relative holmium content play important roles in the switching behavior of the devices. Cycled current–voltage measurements showed that the resistive switching is bipolar with a resistance window of up to five orders of magnitude. In addition, it is demonstrated that the post-breakdown current–voltage characteristics in HoTiO{sub x} are well described by a power-law model in a wide voltage and current range which extends from the soft to the hard breakdown regimes. - Highlights: • Gate and memory suitabilities of atomic layer deposited holmium titanium oxide. • Holmium titanium oxide exhibits resistive switching. • Layer thickness and holmium content influence the resistive switching. • Low and high resistance regimes follow a power-law model. • The power-law model can be extended to the hard breakdown regime.

  20. Atomic scale imaging of competing polar states in a Ruddlesden–Popper layered oxide

    Science.gov (United States)

    Stone, Greg; Ophus, Colin; Birol, Turan; Ciston, Jim; Lee, Che-Hui; Wang, Ke; Fennie, Craig J.; Schlom, Darrell G.; Alem, Nasim; Gopalan, Venkatraman

    2016-01-01

    Layered complex oxides offer an unusually rich materials platform for emergent phenomena through many built-in design knobs such as varied topologies, chemical ordering schemes and geometric tuning of the structure. A multitude of polar phases are predicted to compete in Ruddlesden–Popper (RP), An+1BnO3n+1, thin films by tuning layer dimension (n) and strain; however, direct atomic-scale evidence for such competing states is currently absent. Using aberration-corrected scanning transmission electron microscopy with sub-Ångstrom resolution in Srn+1TinO3n+1 thin films, we demonstrate the coexistence of antiferroelectric, ferroelectric and new ordered and low-symmetry phases. We also directly image the atomic rumpling of the rock salt layer, a critical feature in RP structures that is responsible for the competing phases; exceptional quantitative agreement between electron microscopy and density functional theory is demonstrated. The study shows that layered topologies can enable multifunctionality through highly competitive phases exhibiting diverse phenomena in a single structure. PMID:27578622

  1. Atomic scale imaging of competing polar states in a Ruddlesden-Popper layered oxide.

    Science.gov (United States)

    Stone, Greg; Ophus, Colin; Birol, Turan; Ciston, Jim; Lee, Che-Hui; Wang, Ke; Fennie, Craig J; Schlom, Darrell G; Alem, Nasim; Gopalan, Venkatraman

    2016-08-31

    Layered complex oxides offer an unusually rich materials platform for emergent phenomena through many built-in design knobs such as varied topologies, chemical ordering schemes and geometric tuning of the structure. A multitude of polar phases are predicted to compete in Ruddlesden-Popper (RP), An+1BnO3n+1, thin films by tuning layer dimension (n) and strain; however, direct atomic-scale evidence for such competing states is currently absent. Using aberration-corrected scanning transmission electron microscopy with sub-Ångstrom resolution in Srn+1TinO3n+1 thin films, we demonstrate the coexistence of antiferroelectric, ferroelectric and new ordered and low-symmetry phases. We also directly image the atomic rumpling of the rock salt layer, a critical feature in RP structures that is responsible for the competing phases; exceptional quantitative agreement between electron microscopy and density functional theory is demonstrated. The study shows that layered topologies can enable multifunctionality through highly competitive phases exhibiting diverse phenomena in a single structure.

  2. Electrochemical atomic layer deposition of Pt nanostructures on carbon paper and Ni foam; poster

    CSIR Research Space (South Africa)

    Louw, EK

    2012-07-01

    Full Text Available characteristic of polycrystalline Pt electrodes. ECALD produced good quality deposits that uniformly covered the carbon paper support. The advantages of preparing nanoparticles with this method include ease, flexibility and cost effectiveness. This could provide...

  3. Atomic resolution observation of conversion-type anode RuO 2 during the first electrochemical lithiation

    KAUST Repository

    Mao, Minmin

    2015-03-05

    Transition metal oxides have attracted great interest as alternative anode materials for rechargeable lithium-ion batteries. Among them, ruthenium dioxide is considered to be a prototype material that reacts with the Li ions in the conversion type. In situ transmission electron microscopy reveals a two-step process during the initial lithiation of the RuO2 nanowire anode at atomic resolution. The first step is characterized by the formation of the intermediate phase LixRuO2 due to the Li-ion intercalation. The following step is manifested by the solid-state amorphization reaction driven by advancing the reaction front. The crystalline/amorphous interface is consisted of {011} atomic terraces, revealing the orientation-dependent mobility. In the crystalline matrix, lattice disturbance and dislocation are identified to be two major stress-induced distortions. The latter can be effective diffusion channels, facilitating transportation of the Li ions inside the bulk RuO2 crystal and further resulting in non-uniform Li-ion distribution. It is expected that the local enrichment of the Li ions may account for the homogeneous nucleation of dislocations in the bulk RuO2 crystal and the special island-like structures. These results elucidate the structural evolution and the phase transformation during electrochemical cycling, which sheds light on engineering RuO2 anode materials.

  4. Atomic layer deposited high-k dielectric on graphene by functionalization through atmospheric plasma treatment

    Science.gov (United States)

    Shin, Jeong Woo; Kang, Myung Hoon; Oh, Seongkook; Yang, Byung Chan; Seong, Kwonil; Ahn, Hyo-Sok; Lee, Tae Hoon; An, Jihwan

    2018-05-01

    Atomic layer-deposited (ALD) dielectric films on graphene usually show noncontinuous and rough morphology owing to the inert surface of graphene. Here, we demonstrate the deposition of thin and uniform ALD ZrO2 films with no seed layer on chemical vapor-deposited graphene functionalized by atmospheric oxygen plasma treatment. Transmission electron microscopy showed that the ALD ZrO2 films were highly crystalline, despite a low ALD temperature of 150 °C. The ALD ZrO2 film served as an effective passivation layer for graphene, which was shown by negative shifts in the Dirac voltage and the enhanced air stability of graphene field-effect transistors after ALD of ZrO2. The ALD ZrO2 film on the functionalized graphene may find use in flexible graphene electronics and biosensors owing to its low process temperature and its capacity to improve device performance and stability.

  5. Quantum Hall states of atomic Bose gases: Density profiles in single-layer and multilayer geometries

    International Nuclear Information System (INIS)

    Cooper, N. R.; Lankvelt, F. J. M. van; Reijnders, J. W.; Schoutens, K.

    2005-01-01

    We describe the density profiles of confined atomic Bose gases in the high-rotation limit, in single-layer and multilayer geometries. We show that, in a local-density approximation, the density in a single layer shows a landscape of quantized steps due to the formation of incompressible liquids, which are analogous to fractional quantum Hall liquids for a two-dimensional electron gas in a strong magnetic field. In a multilayered setup we find different phases, depending on the strength of the interlayer tunneling t. We discuss the situation where a vortex lattice in the three-dimensional condensate (at large tunneling) undergoes quantum melting at a critical tunneling t c 1 . For tunneling well below t c 1 one expects weakly coupled or isolated layers, each exhibiting a landscape of quantum Hall liquids. After expansion, this gives a radial density distribution with characteristic features (cusps) that provide experimental signatures of the quantum Hall liquids

  6. Aluminum oxide barrier coating on polyethersulfone substrate by atomic layer deposition for barrier property enhancement

    International Nuclear Information System (INIS)

    Kim, Hyun Gi; Kim, Sung Soo

    2011-01-01

    Aluminum oxide layers were deposited on flexible polyethersulfone (PES) substrates via plasma enhanced atomic layer deposition (PEALD) process using trimethylaluminum (TMA) and oxygen as precursor and reactant materials. Several process parameters in PEALD process were investigated in terms of refractive index and layer thickness. Number of process cycle increased the thickness and refractive index of the layer to enhance the barrier properties. Non-physisorbed TMA and unreacted oxygen were purged before and after the plasma reaction, respectively. Identical purge time was applied to TMA and oxygen and it was optimized for 10 s. Thinner and denser layer was formed as substrate temperature increased. However, the PES substrate could be deformed above 120 o C. Aluminum oxide layer formed on PES at optimized conditions have 11.8 nm of thickness and reduced water vapor transmission rate and oxygen transmission rate to below 4 x 10 -3 g/m 2 day and 4 x 10 -3 cm 3 /m 2 day, respectively. Polycarbonate and polyethylene naphthalate films were also tested at optimized conditions, and they also showed quite appreciable barrier properties to be used as plastic substrates.

  7. Atom-scale depth localization of biologically important chemical elements in molecular layers.

    Science.gov (United States)

    Schneck, Emanuel; Scoppola, Ernesto; Drnec, Jakub; Mocuta, Cristian; Felici, Roberto; Novikov, Dmitri; Fragneto, Giovanna; Daillant, Jean

    2016-08-23

    In nature, biomolecules are often organized as functional thin layers in interfacial architectures, the most prominent examples being biological membranes. Biomolecular layers play also important roles in context with biotechnological surfaces, for instance, when they are the result of adsorption processes. For the understanding of many biological or biotechnologically relevant phenomena, detailed structural insight into the involved biomolecular layers is required. Here, we use standing-wave X-ray fluorescence (SWXF) to localize chemical elements in solid-supported lipid and protein layers with near-Ångstrom precision. The technique complements traditional specular reflectometry experiments that merely yield the layers' global density profiles. While earlier work mostly focused on relatively heavy elements, typically metal ions, we show that it is also possible to determine the position of the comparatively light elements S and P, which are found in the most abundant classes of biomolecules and are therefore particularly important. With that, we overcome the need of artificial heavy atom labels, the main obstacle to a broader application of high-resolution SWXF in the fields of biology and soft matter. This work may thus constitute the basis for the label-free, element-specific structural investigation of complex biomolecular layers and biological surfaces.

  8. Electrochemical probing into the active sites of graphitic-layer encapsulated iron oxygen reduction reaction electrocatalysts

    DEFF Research Database (Denmark)

    Zhong, Lijie; Jensen, Jens Oluf; Cleemann, Lars Nilausen

    2018-01-01

    is still unclear compared with the well-recognized surface coordinated FeNx/C structure. Using the strong complexing effect of the iron component with anions, cyanide (CN−) in alkaline and thiocyanate (SCN−) in acidic media, the metal containing active sites are electrochemically probed. Three...

  9. Preparation and electrochemical performances of nanoporous/cracked cobalt oxide layer for supercapacitors

    Science.gov (United States)

    Gobal, Fereydoon; Faraji, Masoud

    2014-12-01

    Nanoporous/cracked structures of cobalt oxide (Co3O4) electrodes were successfully fabricated by electroplating of zinc-cobalt onto previously formed TiO2 nanotubes by anodizing of titanium, leaching of zinc in a concentrated alkaline solution and followed by drying and annealing at 400 °C. The structure and morphology of the obtained Co3O4 electrodes were characterized by X-ray diffraction, EDX analysis and scanning electron microscopy. The results showed that the obtained Co3O4 electrodes were composed of the nanoporous/cracked structures with an average pore size of about 100 nm. The electrochemical capacitive behaviors of the nanoporous Co3O4 electrodes were investigated by cyclic voltammetry, galvanostatic charge-discharge studies and electrochemical impedance spectroscopy in 1 M NaOH solution. The electrochemical data demonstrated that the electrodes display good capacitive behavior with a specific capacitance of 430 F g-1 at a current density of 1.0 A g-1 and specific capacitance retention of ca. 80 % after 10 days of being used in electrochemical experiments, indicating to be promising electroactive materials for supercapacitors. Furthermore, in comparison with electrodes prepared by simple cathodic deposition of cobalt onto TiO2 nanotubes(without dealloying procedure), the impedance studies showed improved performances likely due to nanoporous/cracked structures of electrodes fabricated by dealloying of zinc, which provide fast ion and electron transfer routes and large reaction surface area with the ensued fast reaction kinetics.

  10. Electrochemical impedance spectroscopy of polycrystalline boron doped diamond layers with hydrogen and oxygen terminated surface

    Czech Academy of Sciences Publication Activity Database

    Vlčková Živcová, Zuzana; Petrák, Václav; Frank, Otakar; Kavan, Ladislav

    2015-01-01

    Roč. 55, MAY 2015 (2015), s. 70-76 ISSN 0925-9635 R&D Projects: GA ČR GA13-31783S Institutional support: RVO:61388955 ; RVO:68378271 Keywords : Boron doped diamond * Electrochemical impedance spectroscopy * Aqueous electrolyte solution Subject RIV: CG - Electrochemistry Impact factor: 2.125, year: 2015

  11. Electron-stimulated desorption of cesium atoms from cesium layers adsorbed on gold-covered tungsten

    Energy Technology Data Exchange (ETDEWEB)

    Ageev, V N; Kuznetsov, Yu A; Potekhina, N D, E-mail: kuznets@ms.ioffe.r [A F Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021, St Petersburg (Russian Federation)

    2010-03-03

    The electron-stimulated desorption (ESD) yields and energy distributions (ED) for neutral cesium atoms have been measured from cesium layers adsorbed on a gold-covered tungsten surface as a function of electron energy, gold film thickness, cesium coverage and substrate temperature. The measurements have been carried out using a time-of-flight method and surface ionization detector in the temperature range 160-300 K. A measurable ESD yield for Cs atoms is observed only after deposition of more than one monolayer of gold and cesium on a tungsten surface at a temperature T = 300 K, which is accompanied by the formation of a CsAu semiconductor film covered with a cesium atom monolayer. The Cs atom ESD yield as a function of incident electron energy has a resonant character and consists of two peaks, the appearance of which depends on both electron energy and substrate temperature. The first peak has an appearance threshold at an electron energy of 57 eV and a substrate temperature of 300 K that is due to Au 5p{sub 3/2} core level excitation in the substrate. The second peak appears at an electron energy of 24 eV and a substrate temperature of 160 K. It is associated with a Cs 5s core level excitation in the Cs adsorbed layer. The Au 5p{sub 3/2} level excitation corresponds to a single broad peak in the ED with a maximum at a kinetic energy of 0.45 eV at a substrate temperature T = 300 K, which is split into two peaks with maxima at kinetic energies of 0.36 and 0.45 eV at a substrate temperature of 160 K, associated with different Cs atom ESD channels. The Cs 5s level excitation leads to an ED for Cs atoms with a maximum at a kinetic energy of approx 0.57 eV which exists only at T < 240 K and low Cs concentrations. The mechanisms for all the Cs atom ESD channels are proposed and compared with the Na atom ESD channels in the Na-Au-W system.

  12. Electrochemical selenium hydride generation with in situ trapping in graphite tube atomizers

    Czech Academy of Sciences Publication Activity Database

    Šíma, Jan; Rychlovský, P.

    2003-01-01

    Roč. 58, č. 5 (2003), s. 919-930 ISSN 0584-8547 R&D Projects: GA ČR GA203/98/0754; GA ČR GA203/01/0453 Institutional research plan: CEZ:AV0Z4031919 Keywords : hydride generation * electrothermal atomic absorption spectrometry * In situ trapping Subject RIV: CB - Analytical Chemistry, Separation Impact factor: 2.361, year: 2003

  13. Reversible electrochemical modification of the surface of a semiconductor by an atomic-force microscope probe

    Energy Technology Data Exchange (ETDEWEB)

    Kozhukhov, A. S., E-mail: antonkozhukhov@yandex.ru; Sheglov, D. V.; Latyshev, A. V. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2017-04-15

    A technique for reversible surface modification with an atomic-force-microscope (AFM) probe is suggested. In this method, no significant mechanical or topographic changes occur upon a local variation in the surface potential of a sample under the AFM probe. The method allows a controlled relative change in the ohmic resistance of a channel in a Hall bridge within the range 20–25%.

  14. Atmospheric spatial atomic layer deposition of Zn(O,S) buffer layer for Cu(In,Ga)Se2 solar cells

    NARCIS (Netherlands)

    Frijters, C.H.; Poodt, P.; Illeberi, A.

    2016-01-01

    Zinc oxysulfide has been grown by spatial atomic layer deposition (S-ALD) and successfully applied as buffer layer in Cu(In, Ga)Se2 (CIGS) solar cells. S-ALD combines high deposition rates (up to nm/s) with the advantages of conventional ALD, i.e. excellent control of film composition and superior

  15. Hydrogen–argon plasma pre-treatment for improving the anti-corrosion properties of thin Al2O3 films deposited using atomic layer deposition on steel

    International Nuclear Information System (INIS)

    Härkönen, Emma; Potts, Stephen E.; Kessels, Wilhelmus M.M.; Díaz, Belén; Seyeux, Antoine; Światowska, Jolanta; Maurice, Vincent; Marcus, Philippe; Radnóczi, György; Tóth, Lajos; Kariniemi, Maarit; Niinistö, Jaakko; Ritala, Mikko

    2013-01-01

    The effect of H 2 –Ar plasma pre-treatment prior to thermal atomic layer deposition (ALD) and plasma-enhanced atomic layer deposition (PEALD) of Al 2 O 3 films on steel for corrosion protection was investigated. Time-of-flight secondary ion mass spectrometry and transmission electron microscopy were used to observe the changes in the interface. The electrochemical properties of the samples were studied with polarization measurements, and the coating porosities were calculated from the polarization results for easier comparison of the coatings. Prior to thermal ALD the plasma pre-treatment was observed to reduce the amount of impurities at the interface and coating porosity by 1–3 orders of magnitude. The anti-corrosion properties of the PEALD coatings could also be improved by the pre-treatment. However, exposure of the pre-treatment plasma activated steel surface to oxygen plasma species in PEALD led to facile oxide layer formation in the interface. The oxide layer formed this way was thicker than the native oxide layer and appeared to be detrimental to the protective properties of the coating. The best performance for PEALD Al 2 O 3 coatings was achieved when, after the plasma pre-treatment, the surface was given time to regrow a thin protective interfacial oxide prior to exposure to the oxygen plasma. The different effects that thermal and plasma-enhanced ALD have on the substrate-coating interface were compared. The reactivity of the oxygen precursor was shown to have a significant influence on substrate surface in the early stages of film growth and thereafter also on the overall quality of the protective film. - Highlights: • Influence of H 2 –Ar plasma pre-treatment to ALD coatings on steel was studied. • The pre-treatment modified the coating–substrate interface composition and thickness. • The pre-treatment improved the barrier properties of the coatings

  16. UV protective zinc oxide coating for biaxially oriented polypropylene packaging film by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lahtinen, Kimmo, E-mail: kimmo.lahtinen@lut.fi [ASTRaL, Lappeenranta University of Technology, Sammonkatu 12, FI-50130 Mikkeli (Finland); Kääriäinen, Tommi, E-mail: tommi.kaariainen@colorado.edu [ASTRaL, Lappeenranta University of Technology, Sammonkatu 12, FI-50130 Mikkeli (Finland); Johansson, Petri, E-mail: petri.johansson@tut.fi [Paper Converting and Packaging Technology, Tampere University of Technology, P.O.Box 589, FI-33101 Tampere (Finland); Kotkamo, Sami, E-mail: sami.kotkamo@tut.fi [Paper Converting and Packaging Technology, Tampere University of Technology, P.O.Box 589, FI-33101 Tampere (Finland); Maydannik, Philipp, E-mail: philipp.maydannik@lut.fi [ASTRaL, Lappeenranta University of Technology, Sammonkatu 12, FI-50130 Mikkeli (Finland); Seppänen, Tarja, E-mail: tarja.seppanen@lut.fi [ASTRaL, Lappeenranta University of Technology, Sammonkatu 12, FI-50130 Mikkeli (Finland); Kuusipalo, Jurkka, E-mail: jurkka.kuusipalo@tut.fi [Paper Converting and Packaging Technology, Tampere University of Technology, P.O.Box 589, FI-33101 Tampere (Finland); Cameron, David C., E-mail: david.cameron@miktech.fi [ASTRaL, Lappeenranta University of Technology, Sammonkatu 12, FI-50130 Mikkeli (Finland)

    2014-11-03

    Biaxially oriented polypropylene (BOPP) packaging film was coated with zinc oxide (ZnO) coatings by atomic layer deposition (ALD) in order to protect the film from UV degradation. The coatings were made at a process temperature of 100 °C using diethylzinc and water as zinc and oxygen precursors, respectively. The UV protective properties of the coatings were tested by using UV–VIS and infrared spectrometry, differential scanning calorimetry (DSC) and a mechanical strength tester, which characterised the tensile and elastic properties of the film. The results obtained with 36 and 67 nm ZnO coatings showed that the ZnO UV protective layer is able to provide a significant decrease in photodegradation of the BOPP film under UV exposure. While the uncoated BOPP film suffered a complete degradation after a 4-week UV exposure, the 67 nm ZnO coated BOPP film was able to preserve half of its original tensile strength and 1/3 of its elongation at break after a 6-week exposure period. The infrared analysis and DSC measurements further proved the UV protection of the ZnO coatings. The results show that a nanometre scale ZnO coating deposited by ALD is a promising option when a transparent UV protection layer is sought for polymer substrates. - Highlights: • Atomic layer deposited zinc oxide coatings were used as UV protection layers. • Biaxially oriented polypropylene (BOPP) film was well protected against UV light. • Formation of UV degradation products in BOPP was significantly reduced. • Mechanical properties of the UV exposed BOPP film were significantly improved.

  17. Electrochemical synthesis, structure and phase composition of nano structured amorphous thin layers of NiW and Ni-Mo

    International Nuclear Information System (INIS)

    Vitina, I.; Lubane, M.; Belmane, V.; Rubene, V.; Krumina, A.

    2006-01-01

    Full text: Nano structured Ni-W thin layers containing W 6-37 wt.% were electrodeposited on a copper substratum. The W content in the layer changes, and it is determined by the electrolyte pH in the range 8.0-9.6 and the cathode current density in the range 1.0-10.0 A/dm 2 . The atomic composition and thermal stability of structure of the electrodeposited thin layers depend for the most part on the conditions of the electrodeposition and less on the W content in the layer. Cracking of the Ni-W layers electrodeposited at the electrolyte pH 8.5 and containing 34-37 wt.% W and 8.5 wt.% W was observed. The cracking increases at heating at 400 deg C for 50 h. On the contrary, no cracking of the Ni-W layer electrodeposited at the electrolyte pH 9.0 and containing 25 wt.% W was observed. The atomic composition of the layer remains practically unchanged at heating at 400 deg C for 50 h. The layer binds oxygen up to 7 wt.%. According to X-ray diffraction, in spite of the W content 35-37 wt.% in the layer, nano structured layers rather than amorphous layers were obtained which at heating at 400 deg C depending on the W content crystallises as Ni or intermetallic compounds Ni x W y if the W content is approx. 25 wt.%. Amorphous Ni-Mo alloys containing 35-52 wt.% Mo was electrodeposited on copper substratum at the cathode current densities of 0.5-1.5 A/dm2 and the electrolyte pH 6.8-8.6. Formation of thin layer (∼1-2μm) of X-ray amorphous Ni-Mo alloy, the Mo content, the characteristics of structure depend on the electrodeposition process, the electrolyte pH, and the cathode current density. The Ni-Mo layer deposited at the electrolyte pH above 8.6 and below average 6.8 had a nanocrystalline structure rather than characteristics of amorphous structure. Ni- W and Ni-Mo alloys were electrodeposited from citrate electrolyte not containing ammonium ions

  18. Triboelectric charge generation by semiconducting SnO2 film grown by atomic layer deposition

    Science.gov (United States)

    Lee, No Ho; Yoon, Seong Yu; Kim, Dong Ha; Kim, Seong Keun; Choi, Byung Joon

    2017-07-01

    Improving the energy harvesting efficiency of triboelectric generators (TEGs) requires exploring new types of materials that can be used, and understanding their properties. In this study, we have investigated semiconducting SnO2 thin films as friction layers in TEGs, which has not been explored thus far. Thin films of SnO2 with various thicknesses were grown by atomic layer deposition on Si substrates. Either polymer or glass was used as counter friction layers. Vertical contact/separation mode was utilized to evaluate the TEG efficiency. The results indicate that an increase in the SnO2 film thickness from 5 to 25 nm enhances the triboelectric output voltage of the TEG. Insertion of a 400-nm-thick Pt sub-layer between the SnO2 film and Si substrate further increased the output voltage up to 120 V in a 2 cm × 2 cm contact area, while the enhancement was cancelled out by inserting a 10-nm-thick insulating Al2O3 film between SnO2 and Pt films. These results indicate that n-type semiconducting SnO2 films can provide triboelectric charge to counter-friction layers in TEGs.[Figure not available: see fulltext.

  19. Role of atomic layer deposited aluminum oxide as oxidation barrier for silicon based materials

    Energy Technology Data Exchange (ETDEWEB)

    Fiorentino, Giuseppe, E-mail: g.fiorentino@tudelft.nl; Morana, Bruno [Department of Microelectronic, Delft University of Technology, Feldmannweg 17, 2628 CT Delft (Netherlands); Forte, Salvatore [Department of Electronic, University of Naples Federico II, Piazzale Tecchio, 80125 Napoli (Italy); Sarro, Pasqualina Maria [Department of Microelectronic, Delft University of Technology, Feldmannweg 17, 2628 CT, Delft (Netherlands)

    2015-01-15

    In this paper, the authors study the protective effect against oxidation of a thin layer of atomic layer deposited (ALD) aluminum oxide (Al{sub 2}O{sub 3}). Nitrogen doped silicon carbide (poly-SiC:N) based microheaters coated with ALD Al{sub 2}O{sub 3} are used as test structure to investigate the barrier effect of the alumina layers to oxygen and water vapor at very high temperature (up to 1000 °C). Different device sets have been fabricated changing the doping levels, to evaluate possible interaction between the dopants and the alumina layer. The as-deposited alumina layer morphology has been evaluated by means of AFM analysis and compared to an annealed sample (8 h at 1000 °C) to estimate the change in the grain structure and the film density. The coated microheaters are subjected to very long oxidation time in dry and wet environment (up to 8 h at 900 and 1000 °C). By evaluating the electrical resistance variation between uncoated reference devices and the ALD coated devices, the oxide growth on the SiC is estimated. The results show that the ALD alumina coating completely prevents the oxidation of the SiC up to 900 °C in wet environment, while an oxide thickness reduction of 50% is observed at 1000 °C compared to uncoated devices.

  20. Atomic Layer-Deposited TiO2 Coatings on NiTi Surface

    Science.gov (United States)

    Vokoun, D.; Racek, J.; Kadeřávek, L.; Kei, C. C.; Yu, Y. S.; Klimša, L.; Šittner, P.

    2018-02-01

    NiTi shape-memory alloys may release poisonous Ni ions at the alloys' surface. In an attempt to prepare a well-performing surface layer on an NiTi sample, the thermally grown TiO2 layer, which formed during the heat treatment of NiTi, was removed and replaced with a new TiO2 layer prepared using the atomic layer deposition (ALD) method. Using x-ray photoelectron spectroscopy, it was found that the ALD layer prepared at as low a temperature as 100 °C contained Ti in oxidation states + 4 and + 3. As for static corrosion properties of the ALD-coated NiTi samples, they further improved compared to those covered by thermally grown oxide. The corrosion rate of samples with thermally grown oxide was 1.05 × 10-5 mm/year, whereas the corrosion rate of the ALD-coated samples turned out to be about five times lower. However, cracking of the ALD coating occurred at about 1.5% strain during the superelastic mechanical loading in tension taking place via the propagation of a localized martensite band.

  1. Atomic layer deposition for photovoltaics: applications and prospects for solar cell manufacturing

    International Nuclear Information System (INIS)

    Van Delft, J A; Garcia-Alonso, D; Kessels, W M M

    2012-01-01

    Atomic layer deposition (ALD) is a vapour-phase deposition technique capable of depositing high quality, uniform and conformal thin films at relatively low temperatures. These outstanding properties can be employed to face processing challenges for various types of next-generation solar cells; hence, ALD for photovoltaics (PV) has attracted great interest in academic and industrial research in recent years. In this review, the recent progress of ALD layers applied to various solar cell concepts and their future prospects are discussed. Crystalline silicon (c-Si), copper indium gallium selenide (CIGS) and dye-sensitized solar cells (DSSCs) benefit from the application of ALD surface passivation layers, buffer layers and barrier layers, respectively. ALD films are also excellent moisture permeation barriers that have been successfully used to encapsulate flexible CIGS and organic photovoltaic (OPV) cells. Furthermore, some emerging applications of the ALD method in solar cell research are reviewed. The potential of ALD for solar cells manufacturing is discussed, and the current status of high-throughput ALD equipment development is presented. ALD is on the verge of being introduced in the PV industry and it is expected that it will be part of the standard solar cell manufacturing equipment in the near future. (paper)

  2. Tuning the mechanical properties of vertical graphene sheets through atomic layer deposition

    International Nuclear Information System (INIS)

    Davami, Keivan; Jiang, Yijie; Cortes, John; Lin, Chen; Turner, Kevin T; Bargatin, Igor; Shaygan, Mehrdad

    2016-01-01

    We report the fabrication and characterization of graphene nanostructures with mechanical properties that are tuned by conformal deposition of alumina. Vertical graphene (VG) sheets, also called carbon nanowalls (CNWs), were grown on copper foil substrates using a radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) technique and conformally coated with different thicknesses of alumina (Al_2O_3) using atomic layer deposition (ALD). Nanoindentation was used to characterize the mechanical properties of pristine and alumina-coated VG sheets. Results show a significant increase in the effective Young’s modulus of the VG sheets with increasing thickness of deposited alumina. Deposition of only a 5 nm thick alumina layer on the VG sheets nearly triples the effective Young’s modulus of the VG structures. Both energy absorption and strain recovery were lower in VG sheets coated with alumina than in pure VG sheets (for the same peak force). This may be attributed to the increase in bending stiffness of the VG sheets and the creation of connections between the sheets after ALD deposition. These results demonstrate that the mechanical properties of VG sheets can be tuned over a wide range through conformal atomic layer deposition, facilitating the use of VG sheets in applications where specific mechanical properties are needed. (paper)

  3. Ionic double layer of atomically flat gold formed on mica templates

    International Nuclear Information System (INIS)

    Chilcott, Terry C.; Wong, Elicia L.S.; Coster, Hans G.L.; Coster, Adelle C.F.; James, Michael

    2009-01-01

    Electrical impedance spectroscopy characterisations of gold surfaces formed on mica templates in contact with potassium chloride electrolytes were performed at the electric potential of zero charge over a frequency range of 6 x 10 -3 to 100 x 10 3 Hz. They revealed constant-phase-angle (CPA) behaviour with a frequency exponent value of 0.96 for surfaces that were also characterised as atomically flat using atomic force microscopy (AFM). As the frequency exponent value was only marginally less than unity, the CPA behaviour yielded a realistic estimate for the capacitance of the ionic double layer. The retention of the CPA behaviour was attributed to specific adsorption of chloride ions which was detected as an adsorption conductance element in parallel with the CPA impedance element. Significant variations in the ionic double layer capacitance as well as the adsorption conductance were observed for electrolyte concentrations ranging from 33 μM to 100 mM, but neither of these variations correlated with concentration. This is consistent with the electrical properties of the interface deriving principally from the inner or Stern region of the double layer.

  4. Observation of anomalous Stokes versus anti-Stokes ratio in MoTe2 atomic layers

    Science.gov (United States)

    Goldstein, Thomas; Chen, Shao-Yu; Xiao, Di; Ramasubramaniam, Ashwin; Yan, Jun

    We grow hexagonal molybdenum ditelluride (MoTe2), a prototypical transition metal dichalcogenide (TMDC) semiconductor, with chemical vapor transport methods and investigate its atomic layers with Stokes and anti-Stokes Raman scattering. We report observation of all six types of zone center optical phonons. Quite remarkably, the anti-Stokes Raman intensity of the low energy layer-breathing mode becomes more intense than the Stokes peak under certain experimental conditions, creating an illusion of 'negative temperature'. This effect is tunable, and can be switched from anti-Stokes enhancement to suppression by varying the excitation wavelength. We interpret this observation to be a result of resonance effects arising from the C excitons in the vicinity of the Brillouin zone center, which are robust even for multiple layers of MoTe2. The intense anti-Stokes Raman scattering provides a cooling channel for the crystal and opens up opportunities for laser cooling of atomically thin TMDC semiconductor devices. Supported by the University of Massachusetts Amherst, the National Science Foundation Center for Hierarchical Manufacturing (CMMI-1025020) and Office of Emerging Frontiers in Research and Innovation (EFRI-1433496).

  5. Study of the zirconium passive layer in nitric medium, by the means of electrochemical impedance spectrometry

    International Nuclear Information System (INIS)

    Musy, C.

    1996-01-01

    Although zirconium exhibits a very low corrosion rate in nitric medium at 100 C, electrochemical impedance spectrometry enabled the in-situ monitoring of the zirconium oxide growth in theses conditions. The growth curve shows a very clear deceleration of the oxide growth kinetics after the first hundred hours of immersion in hot nitric medium. The initial thickness of the native oxide film is also examined

  6. Coloration of metallic and/or ceramic surfaces obtained by atomic layer deposited nano-coatings

    International Nuclear Information System (INIS)

    Guzman, L.; Vettoruzzo, F.; Laidani, N.

    2016-01-01

    By depositing single layer coatings by means of physical vapor techniques, tailoring of their coloration is generally complex because a given color can be obtained only by very high composition control. Physical vapor deposition (PVD) processes are expensive and cannot be easily used for obtaining conformal coating on three-dimensional objects. Moreover PVD coatings exhibit intrinsic defects (columnar structures, pores) that affect their functional properties and applications such as barrier layers. Atomic layer deposition (ALD) technology delivers conformal coatings on different materials with very low defectiveness. A straightforward coloration can be obtained by a combination of two types of layers with different refraction index, deposited to high thickness precision. Computer simulation studies were performed to design the thickness and architecture of multilayer structures, to a total thickness of approximately 100 nm, suitable to modify the typical coloration of some materials, without altering their other physical and chemical properties. The most promising nano-layered structures were then deposited by ALD and tested with regard to their optical properties. Their total thicknesses were specified in such a way to be technically feasible and compatible with future industrial production. The materials employed in this study to build the optical coatings, are two oxides (Al_2O_3, TiO_2) deposited at 120 °C and two nitrides (AlN, TiN), which need a deposition temperature of 400 °C. The possibility of using such modern deposition technology for esthetic and decorative purposes, while maintaining the functional properties, opens perspectives of industrial applications. - Highlights: • Computer simulation is done to design multilayers made of Al_2O_3, TiO_2, AlN, and TiN. • Total thickness (< 120 nm) is specified to be compatible with industrial production. • The most promising nano-layered structures are then produced and optically tested. • An

  7. Role of plasma enhanced atomic layer deposition reactor wall conditions on radical and ion substrate fluxes

    Energy Technology Data Exchange (ETDEWEB)

    Sowa, Mark J., E-mail: msowa@ultratech.com [Ultratech/Cambridge NanoTech, 130 Turner Street, Building 2, Waltham, Massachusetts 02453 (United States)

    2014-01-15

    Chamber wall conditions, such as wall temperature and film deposits, have long been known to influence plasma source performance on thin film processing equipment. Plasma physical characteristics depend on conductive/insulating properties of chamber walls. Radical fluxes depend on plasma characteristics as well as wall recombination rates, which can be wall material and temperature dependent. Variations in substrate delivery of plasma generated species (radicals, ions, etc.) impact the resulting etch or deposition process resulting in process drift. Plasma enhanced atomic layer deposition is known to depend strongly on substrate radical flux, but film properties can be influenced by other plasma generated phenomena, such as ion bombardment. In this paper, the chamber wall conditions on a plasma enhanced atomic layer deposition process are investigated. The downstream oxygen radical and ion fluxes from an inductively coupled plasma source are indirectly monitored in temperature controlled (25–190 °C) stainless steel and quartz reactors over a range of oxygen flow rates. Etch rates of a photoresist coated quartz crystal microbalance are used to study the oxygen radical flux dependence on reactor characteristics. Plasma density estimates from Langmuir probe ion saturation current measurements are used to study the ion flux dependence on reactor characteristics. Reactor temperature was not found to impact radical and ion fluxes substantially. Radical and ion fluxes were higher for quartz walls compared to stainless steel walls over all oxygen flow rates considered. The radical flux to ion flux ratio is likely to be a critical parameter for the deposition of consistent film properties. Reactor wall material, gas flow rate/pressure, and distance from the plasma source all impact the radical to ion flux ratio. These results indicate maintaining chamber wall conditions will be important for delivering consistent results from plasma enhanced atomic layer deposition

  8. Electrochemical preparation of MoO{sub 3} buffer layer deposited onto the anode in organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Gacitua, M.; Soto, G.; Valle, M.A. del [Pontificia Universidad Catolica de Chile, Facultad de Quimica, Laboratorio de Electroquimica de Polimeros (LEP), Santiago (Chile); Boutaleb, Y.; Rehamnia, R. [Laboratoire d' Electrochimie, Universite Badji Mokhtar, Annaba (Algeria); Cattin, L.; Louarn, G. [Universite de Nantes, Nantes Atlantique Universites, Institut des Materiaux Jean Rouxel (IMN)-CNRS, Faculte des Sciences et Techniques, Nantes (France); Abe, S.Y. [Laboratoire de Physique de la Matiere Condensee et de Technologie (LPMCT), Universite de Cocody (Ivory Coast); Lare, Y. [Laboratoire d' Energie Solaire, Universite de Lome, Lome (Togo); Morsli, M; Bernede, J.C. [Universite de Nantes, Nantes Atlantique Universites, LAMP, EA 3825, Faculte des Sciences et des Techniques, Nantes (France); Drici, A. [LEREC Departement de physique, Universite Badji Mokhtar, Annaba (Algeria)

    2010-08-15

    In this work the authors have studied the advantages of using electrochemically deposited molybdenum oxide as a buffer layer in an organic bilayer heterojunction solar cell arrangement. Furthermore, it has been probed that electrochemistry provides an alternative low cost, reproducible and less laborious method to prepare thin layered deposits. The precursor solution is composed by a concentrated molybdic acid solution in a sulphuric media in order to ensure the obtainment of low reduced molybdenum species. Therefore, by means of potentiostatic techniques, ITO/molybdenum oxide transparent anodes were tested for the photovoltaic device showing improved surface properties. XDR and AFM techniques were used to characterize the morphology of the deposits. The films with optimum thickness (5 nm) are amorphous. XPS analysis indicates that the best results in solar cell performance are in hand with a heterogeneous composition of the molybdenum oxide film presenting Mo{sup V} and Mo{sup VI} as predominant species. The MoO{sub 3} films deposited by cyclic voltammetry are not as homogeneous as those deposited by potentiostatic technique and only Mo{sup VI} species are present. These differences may justify the different behaviour of the solar cells using these different buffer layers. Only buffer layers deposited by potentiostatic technique allow improving the cells performances in the same way than those achieved by evaporation. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  9. TiO2 nanofiber solid-state dye sensitized solar cells with thin TiO2 hole blocking layer prepared by atomic layer deposition

    International Nuclear Information System (INIS)

    Li, Jinwei; Chen, Xi; Xu, Weihe; Nam, Chang-Yong; Shi, Yong

    2013-01-01

    We incorporated a thin but structurally dense TiO 2 layer prepared by atomic layer deposition (ALD) as an efficient hole blocking layer in the TiO 2 nanofiber based solid-state dye sensitized solar cell (ss-DSSC). The nanofiber ss-DSSCs having ALD TiO 2 layers displayed increased open circuit voltage, short circuit current density, and power conversion efficiency compared to control devices with blocking layers prepared by spin-coating liquid TiO 2 precursor. We attribute the improved photovoltaic device performance to the structural integrity of ALD-coated TiO 2 layer and consequently enhanced hole blocking effect that results in reduced dark leakage current and increased charge carrier lifetime. - Highlights: • TiO 2 blocking locking layer prepared by atomic layer deposition (ALD) method. • ALD-coated TiO 2 layer enhanced hole blocking effect. • ALD blocking layer improved the voltage, current and efficiency. • ALD blocking layer reduced dark leakage current and increased electron lifetime

  10. TiO{sub 2} nanofiber solid-state dye sensitized solar cells with thin TiO{sub 2} hole blocking layer prepared by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Li, Jinwei; Chen, Xi; Xu, Weihe [Department of Mechanical Engineering, Stevens Institute of Technology, Hoboken, NJ 07030 (United States); Nam, Chang-Yong, E-mail: cynam@bnl.gov [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY 11973 (United States); Shi, Yong, E-mail: Yong.Shi@stevens.edu [Department of Mechanical Engineering, Stevens Institute of Technology, Hoboken, NJ 07030 (United States)

    2013-06-01

    We incorporated a thin but structurally dense TiO{sub 2} layer prepared by atomic layer deposition (ALD) as an efficient hole blocking layer in the TiO{sub 2} nanofiber based solid-state dye sensitized solar cell (ss-DSSC). The nanofiber ss-DSSCs having ALD TiO{sub 2} layers displayed increased open circuit voltage, short circuit current density, and power conversion efficiency compared to control devices with blocking layers prepared by spin-coating liquid TiO{sub 2} precursor. We attribute the improved photovoltaic device performance to the structural integrity of ALD-coated TiO{sub 2} layer and consequently enhanced hole blocking effect that results in reduced dark leakage current and increased charge carrier lifetime. - Highlights: • TiO{sub 2} blocking locking layer prepared by atomic layer deposition (ALD) method. • ALD-coated TiO{sub 2} layer enhanced hole blocking effect. • ALD blocking layer improved the voltage, current and efficiency. • ALD blocking layer reduced dark leakage current and increased electron lifetime.

  11. Improvement and protection of niobium surface superconductivity by atomic layer deposition and heat treatment

    Energy Technology Data Exchange (ETDEWEB)

    Proslier, T.; /IIT, Chicago /Argonne; Zasadzinski, J.; /IIT, Chicago; Moore, J.; Pellin, M.; Elam, J.; /Argonne; Cooley, L.; /Fermilab; Antoine, C.; /Saclay

    2008-11-01

    A method to treat the surface of Nb is described, which potentially can improve the performance of superconducting rf cavities. We present tunneling and x-ray photoemission spectroscopy measurements at the surface of cavity-grade niobium samples coated with a 3 nm alumina overlayer deposited by atomic layer deposition. The coated samples baked in ultrahigh vacuum at low temperature degraded superconducting surface. However, at temperatures above 450 C, the tunneling conductance curves show significant improvements in the superconducting density of states compared with untreated surfaces.

  12. Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion

    Science.gov (United States)

    Martinson, Alex B.; Riha, Shannon; Guo, Peijun; Emery, Jonathan D.

    2016-07-12

    A method to provide an article of manufacture of iron oxide on indium tin oxide for solar energy conversion. An atomic layer epitaxy method is used to deposit an uncommon bixbytite-phase iron (III) oxide (.beta.-Fe.sub.2O.sub.3) which is deposited at low temperatures to provide 99% phase pure .beta.-Fe.sub.2O.sub.3 thin films on indium tin oxide. Subsequent annealing produces pure .alpha.-Fe.sub.2O.sub.3 with well-defined epitaxy via a topotactic transition. These highly crystalline films in the ultra thin film limit enable high efficiency photoelectrochemical chemical water splitting.

  13. Quantum chemical study of the elementary reactions in zirconium oxide atomic layer deposition

    International Nuclear Information System (INIS)

    Widjaja, Yuniarto; Musgrave, Charles B.

    2002-01-01

    Elementary reactions in atomic layer deposition of zirconia using zirconium tetrachloride and water are investigated using the density functional theory. The atomistic mechanisms of the two deposition half cycles on the Zr-OH and Zr-Cl surface sites are investigated. Both half reactions proceed through the formation of stable intermediates, resulting in high barriers for HCl formation. We find that the intermediate stability is lowered as the surface temperature is raised. However, increasing temperature also increases the dissociation free-energy barrier, which in turn results in increased desorption of adsorbed precursors

  14. Metallic nanoparticle-based strain sensors elaborated by atomic layer deposition

    Science.gov (United States)

    Puyoo, E.; Malhaire, C.; Thomas, D.; Rafaël, R.; R'Mili, M.; Malchère, A.; Roiban, L.; Koneti, S.; Bugnet, M.; Sabac, A.; Le Berre, M.

    2017-03-01

    Platinum nanoparticle-based strain gauges are elaborated by means of atomic layer deposition on flexible polyimide substrates. Their electro-mechanical response is tested under mechanical bending in both buckling and conformational contact configurations. A maximum gauge factor of 70 is reached at a strain level of 0.5%. Although the exponential dependence of the gauge resistance on strain is attributed to the tunneling effect, it is shown that the majority of the junctions between adjacent Pt nanoparticles are in a short circuit state. Finally, we demonstrate the feasibility of an all-plastic pressure sensor integrating Pt nanoparticle-based strain gauges in a Wheatstone bridge configuration.

  15. Microwave absorption properties of carbon nanocoils coated with highly controlled magnetic materials by atomic layer deposition.

    Science.gov (United States)

    Wang, Guizhen; Gao, Zhe; Tang, Shiwei; Chen, Chaoqiu; Duan, Feifei; Zhao, Shichao; Lin, Shiwei; Feng, Yuhong; Zhou, Lei; Qin, Yong

    2012-12-21

    In this work, atomic layer deposition is applied to coat carbon nanocoils with magnetic Fe(3)O(4) or Ni. The coatings have a uniform and highly controlled thickness. The coated nanocoils with coaxial multilayer nanostructures exhibit remarkably improved microwave absorption properties compared to the pristine carbon nanocoils. The enhanced absorption ability arises from the efficient complementarity between complex permittivity and permeability, chiral morphology, and multilayer structure of the products. This method can be extended to exploit other composite materials benefiting from its convenient control of the impedance matching and combination of dielectric-magnetic multiple loss mechanisms for microwave absorption applications.

  16. Growth and characterization of titanium oxide by plasma enhanced atomic layer deposition

    KAUST Repository

    Zhao, Chao

    2013-09-01

    The growth of TiO2 films by plasma enhanced atomic layer deposition using Star-Ti as a precursor has been systematically studied. The conversion from amorphous to crystalline TiO2 was observed either during high temperature growth or annealing process of the films. The refractive index and bandgap of TiO2 films changed with the growth and annealing temperatures. The optimization of the annealing conditions for TiO2 films was also done by morphology and density studies. © 2013 Elsevier B.V. All rights reserved.

  17. Atomically Thin Heterostructures Based on Single-Layer Tungsten Diselenide and Graphene

    KAUST Repository

    Lin, Yu-Chuan; Chang, Chih-Yuan S.; Ghosh, Ram Krishna; Li, Jie; Zhu, Hui; Addou, Rafik; Diaconescu, Bogdan; Ohta, Taisuke; Peng, Xin; Lu, Ning; Kim, Moon J.; Robinson, Jeremy T.; Wallace, Robert M; Mayer, Theresa S.; Datta, Suman; Li, Lain-Jong; Robinson, Joshua A.

    2014-01-01

    Heterogeneous engineering of two-dimensional layered materials, including metallic graphene and semiconducting transition metal dichalcogenides, presents an exciting opportunity to produce highly tunable electronic and optoelectronic systems. In order to engineer pristine layers and their interfaces, epitaxial growth of such heterostructures is required. We report the direct growth of crystalline, monolayer tungsten diselenide (WSe2) on epitaxial graphene (EG) grown from silicon carbide. Raman spectroscopy, photoluminescence, and scanning tunneling microscopy confirm high-quality WSe2 monolayers, whereas transmission electron microscopy shows an atomically sharp interface, and low energy electron diffraction confirms near perfect orientation between WSe2 and EG. Vertical transport measurements across the WSe2/EG heterostructure provides evidence that an additional barrier to carrier transport beyond the expected WSe2/EG band offset exists due to the interlayer gap, which is supported by theoretical local density of states (LDOS) calculations using self-consistent density functional theory (DFT) and nonequilibrium Green's function (NEGF).

  18. TiO2 nanosheets synthesized by atomic layer deposition for photocatalysis

    Directory of Open Access Journals (Sweden)

    Riyanto Edy

    2016-10-01

    Full Text Available Two-dimensional TiO2 nanosheets were synthesized by atomic layer deposition (ALD on dissolvable sacrificial polymer layer. The photocatalytic performance of free-standing TiO2 nanosheets prepared with different numbers of ALD cycles (100, 300, 500, and 1000 were investigated by evaluating the degradation rates of methyl orange solutions. It is shown that the photocatalytic activity increases due to Ti3+ defect and the locally ordered structures in amorphous TiO2 nanosheets. The difference in the surface areas of nanosheets may also play a crucial role in the photocatalytic activity. The results obtained in this work can have potential applications in fields like water splitting and dye-sensitized solar cells.

  19. Intrinsic electron traps in atomic-layer deposited HfO{sub 2} insulators

    Energy Technology Data Exchange (ETDEWEB)

    Cerbu, F.; Madia, O.; Afanas' ev, V. V.; Houssa, M.; Stesmans, A. [Laboratory of Semiconductor Physics, Department of Physics and Astronomy, University of Leuven, 3001 Leuven (Belgium); Andreev, D. V. [Laboratory of Semiconductor Physics, Department of Physics and Astronomy, University of Leuven, 3001 Leuven (Belgium); Bauman Moscow State Technical University—Kaluga Branch, 248000 Kaluga, Moscow obl. (Russian Federation); Fadida, S.; Eizenberg, M. [Department of Materials Science and Engineering, Technion-Israel Institute of Technology, 32000 Haifa (Israel); Breuil, L. [imec, 3001 Leuven (Belgium); Lisoni, J. G. [imec, 3001 Leuven (Belgium); Institute of Physics and Mathematics, Faculty of Science, Universidad Austral de Chile, Valdivia (Chile); Kittl, J. A. [Laboratory of Semiconductor Physics, Department of Physics and Astronomy, University of Leuven, 3001 Leuven (Belgium); Advanced Logic Lab, Samsung Semiconductor, Inc., Austin, 78754 Texas (United States); Strand, J.; Shluger, A. L. [Department of Physics and Astronomy, University College London, London WC1E 6BT (United Kingdom)

    2016-05-30

    Analysis of photodepopulation of electron traps in HfO{sub 2} films grown by atomic layer deposition is shown to provide the trap energy distribution across the entire oxide bandgap. The presence is revealed of two kinds of deep electron traps energetically distributed at around E{sub t} ≈ 2.0 eV and E{sub t} ≈ 3.0 eV below the oxide conduction band. Comparison of the trapped electron energy distributions in HfO{sub 2} layers prepared using different precursors or subjected to thermal treatment suggests that these centers are intrinsic in origin. However, the common assumption that these would implicate O vacancies cannot explain the charging behavior of HfO{sub 2}, suggesting that alternative defect models should be considered.

  20. Atomic layer deposited TiO{sub 2} for implantable brain-chip interfacing devices

    Energy Technology Data Exchange (ETDEWEB)

    Cianci, E., E-mail: elena.cianci@mdm.imm.cnr.it [Laboratorio MDM, IMM-CNR, 20864 Agrate Brianza (MB) (Italy); Lattanzio, S. [Istituto di Fisiologia, Dipartimento di Anatomia Umana e Fisiologia, Universita di Padova, 35131 Padova (Italy); Dipartimento di Ingegneria dell' Informazione, Universita di Padova, 35131 Padova (Italy); Seguini, G. [Laboratorio MDM, IMM-CNR, 20864 Agrate Brianza (Italy); Vassanelli, S. [Istituto di Fisiologia, Dipartimento di Anatomia Umana e Fisiologia, Universita di Padova, 35131 Padova (Italy); Fanciulli, M. [Laboratorio MDM, IMM-CNR, 20864 Agrate Brianza (Italy); Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano-Bicocca, 20126 Milano (Italy)

    2012-05-01

    In this paper we investigated atomic layer deposition (ALD) TiO{sub 2} thin films deposited on implantable neuro-chips based on electrolyte-oxide-semiconductor (EOS) junctions, implementing both efficient capacitive neuron-silicon coupling and biocompatibility for long-term implantable functionality. The ALD process was performed at 295 Degree-Sign C using titanium tetraisopropoxide and ozone as precursors on needle-shaped silicon substrates. Engineering of the capacitance of the EOS junctions introducing a thin Al{sub 2}O{sub 3} buffer layer between TiO{sub 2} and silicon resulted in a further increase of the specific capacitance. Biocompatibility for long-term implantable neuroprosthetic systems was checked upon in-vitro treatment.

  1. Atomically Thin Heterostructures Based on Single-Layer Tungsten Diselenide and Graphene

    KAUST Repository

    Lin, Yu-Chuan

    2014-11-10

    Heterogeneous engineering of two-dimensional layered materials, including metallic graphene and semiconducting transition metal dichalcogenides, presents an exciting opportunity to produce highly tunable electronic and optoelectronic systems. In order to engineer pristine layers and their interfaces, epitaxial growth of such heterostructures is required. We report the direct growth of crystalline, monolayer tungsten diselenide (WSe2) on epitaxial graphene (EG) grown from silicon carbide. Raman spectroscopy, photoluminescence, and scanning tunneling microscopy confirm high-quality WSe2 monolayers, whereas transmission electron microscopy shows an atomically sharp interface, and low energy electron diffraction confirms near perfect orientation between WSe2 and EG. Vertical transport measurements across the WSe2/EG heterostructure provides evidence that an additional barrier to carrier transport beyond the expected WSe2/EG band offset exists due to the interlayer gap, which is supported by theoretical local density of states (LDOS) calculations using self-consistent density functional theory (DFT) and nonequilibrium Green\\'s function (NEGF).

  2. Modeling and optimization of atomic layer deposition processes on vertically aligned carbon nanotubes

    Directory of Open Access Journals (Sweden)

    Nuri Yazdani

    2014-03-01

    Full Text Available Many energy conversion and storage devices exploit structured ceramics with large interfacial surface areas. Vertically aligned carbon nanotube (VACNT arrays have emerged as possible scaffolds to support large surface area ceramic layers. However, obtaining conformal and uniform coatings of ceramics on structures with high aspect ratio morphologies is non-trivial, even with atomic layer deposition (ALD. Here we implement a diffusion model to investigate the effect of the ALD parameters on coating kinetics and use it to develop a guideline for achieving conformal and uniform thickness coatings throughout the depth of ultra-high aspect ratio structures. We validate the model predictions with experimental data from ALD coatings of VACNT arrays. However, the approach can be applied to predict film conformality as a function of depth for any porous topology, including nanopores and nanowire arrays.

  3. Modeling and optimization of atomic layer deposition processes on vertically aligned carbon nanotubes.

    Science.gov (United States)

    Yazdani, Nuri; Chawla, Vipin; Edwards, Eve; Wood, Vanessa; Park, Hyung Gyu; Utke, Ivo

    2014-01-01

    Many energy conversion and storage devices exploit structured ceramics with large interfacial surface areas. Vertically aligned carbon nanotube (VACNT) arrays have emerged as possible scaffolds to support large surface area ceramic layers. However, obtaining conformal and uniform coatings of ceramics on structures with high aspect ratio morphologies is non-trivial, even with atomic layer deposition (ALD). Here we implement a diffusion model to investigate the effect of the ALD parameters on coating kinetics and use it to develop a guideline for achieving conformal and uniform thickness coatings throughout the depth of ultra-high aspect ratio structures. We validate the model predictions with experimental data from ALD coatings of VACNT arrays. However, the approach can be applied to predict film conformality as a function of depth for any porous topology, including nanopores and nanowire arrays.

  4. Atomic layer deposited TiO2 for implantable brain-chip interfacing devices

    International Nuclear Information System (INIS)

    Cianci, E.; Lattanzio, S.; Seguini, G.; Vassanelli, S.; Fanciulli, M.

    2012-01-01

    In this paper we investigated atomic layer deposition (ALD) TiO 2 thin films deposited on implantable neuro-chips based on electrolyte-oxide-semiconductor (EOS) junctions, implementing both efficient capacitive neuron-silicon coupling and biocompatibility for long-term implantable functionality. The ALD process was performed at 295 °C using titanium tetraisopropoxide and ozone as precursors on needle-shaped silicon substrates. Engineering of the capacitance of the EOS junctions introducing a thin Al 2 O 3 buffer layer between TiO 2 and silicon resulted in a further increase of the specific capacitance. Biocompatibility for long-term implantable neuroprosthetic systems was checked upon in-vitro treatment.

  5. Interlayer electron-hole pair multiplication by hot carriers in atomic layer semiconductor heterostructures

    Science.gov (United States)

    Barati, Fatemeh; Grossnickle, Max; Su, Shanshan; Lake, Roger; Aji, Vivek; Gabor, Nathaniel

    Two-dimensional heterostructures composed of atomically thin transition metal dichalcogenides provide the opportunity to design novel devices for the study of electron-hole pair multiplication. We report on highly efficient multiplication of interlayer electron-hole pairs at the interface of a tungsten diselenide / molybdenum diselenide heterostructure. Electronic transport measurements of the interlayer current-voltage characteristics indicate that layer-indirect electron-hole pairs are generated by hot electron impact excitation. Our findings, which demonstrate an efficient energy relaxation pathway that competes with electron thermalization losses, make 2D semiconductor heterostructures viable for a new class of hot-carrier energy harvesting devices that exploit layer-indirect electron-hole excitations. SHINES, an Energy Frontier Research Center funded by the U.S. Department of Energy, Air Force Office of Scientific Research.

  6. Coking- and sintering-resistant palladium catalysts achieved through atomic layer deposition.

    Science.gov (United States)

    Lu, Junling; Fu, Baosong; Kung, Mayfair C; Xiao, Guomin; Elam, Jeffrey W; Kung, Harold H; Stair, Peter C

    2012-03-09

    We showed that alumina (Al(2)O(3)) overcoating of supported metal nanoparticles (NPs) effectively reduced deactivation by coking and sintering in high-temperature applications of heterogeneous catalysts. We overcoated palladium NPs with 45 layers of alumina through an atomic layer deposition (ALD) process that alternated exposures of the catalysts to trimethylaluminum and water at 200°C. When these catalysts were used for 1 hour in oxidative dehydrogenation of ethane to ethylene at 650°C, they were found by thermogravimetric analysis to contain less than 6% of the coke formed on the uncoated catalysts. Scanning transmission electron microscopy showed no visible morphology changes after reaction at 675°C for 28 hours. The yield of ethylene was improved on all ALD Al(2)O(3) overcoated Pd catalysts.

  7. Atomic layer deposition of Al-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Tynell, Tommi; Yamauchi, Hisao; Karppinen, Maarit; Okazaki, Ryuji; Terasaki, Ichiro [Department of Chemistry, Aalto University, FI-00076 Aalto (Finland); Department of Physics, Nagoya University, Nagoya 464-8602 (Japan)

    2013-01-15

    Atomic layer deposition has been used to fabricate thin films of aluminum-doped ZnO by depositing interspersed layers of ZnO and Al{sub 2}O{sub 3} on borosilicate glass substrates. The growth characteristics of the films have been investigated through x-ray diffraction, x-ray reflection, and x-ray fluorescence measurements, and the efficacy of the Al doping has been evaluated through optical reflectivity and Seebeck coefficient measurements. The Al doping is found to affect the carrier density of ZnO up to a nominal Al dopant content of 5 at. %. At nominal Al doping levels of 10 at. % and higher, the structure of the films is found to be strongly affected by the Al{sub 2}O{sub 3} phase and no further carrier doping of ZnO is observed.

  8. SISGR: Improved Electrical Energy Storage with Electrochemical Double Layer Capacitance Based on Novel Carbon Electrodes, New Electrolytes, and Thorough Development of a Strong Science Base

    Energy Technology Data Exchange (ETDEWEB)

    Ruoff, Rodney S. [PI; Alam, Todd M. [co-PI; Bielawski, Christopher W. [co-PI; Chabal, Yves [co-PI; Hwang, Gyeong [co-PI; Ishii, Yoshitaka [co-PI; Rogers, Robin [co-PI

    2014-07-23

    The broad objective of the SISGR program is to advance the fundamental scientific understanding of electrochemical double layer capacitance (EDLC) and thus of ultracapacitor systems composed of a new type of electrode based on chemically modified graphene (CMG) and (primarily) with ionic liquids (ILs) as the electrolyte. Our team has studied the interplay between graphene-based and graphene-derived carbons as the electrode materials in electrochemical double layer capacitors (EDLC) systems on the one hand, and electrolytes including novel ionic liquids (ILs), on the other, based on prior work on the subject.

  9. Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics.

    Science.gov (United States)

    Wu, Wenzhuo; Wang, Lei; Li, Yilei; Zhang, Fan; Lin, Long; Niu, Simiao; Chenet, Daniel; Zhang, Xian; Hao, Yufeng; Heinz, Tony F; Hone, James; Wang, Zhong Lin

    2014-10-23

    The piezoelectric characteristics of nanowires, thin films and bulk crystals have been closely studied for potential applications in sensors, transducers, energy conversion and electronics. With their high crystallinity and ability to withstand enormous strain, two-dimensional materials are of great interest as high-performance piezoelectric materials. Monolayer MoS2 is predicted to be strongly piezoelectric, an effect that disappears in the bulk owing to the opposite orientations of adjacent atomic layers. Here we report the first experimental study of the piezoelectric properties of two-dimensional MoS2 and show that cyclic stretching and releasing of thin MoS2 flakes with an odd number of atomic layers produces oscillating piezoelectric voltage and current outputs, whereas no output is observed for flakes with an even number of layers. A single monolayer flake strained by 0.53% generates a peak output of 15 mV and 20 pA, corresponding to a power density of 2 mW m(-2) and a 5.08% mechanical-to-electrical energy conversion efficiency. In agreement with theoretical predictions, the output increases with decreasing thickness and reverses sign when the strain direction is rotated by 90°. Transport measurements show a strong piezotronic effect in single-layer MoS2, but not in bilayer and bulk MoS2. The coupling between piezoelectricity and semiconducting properties in two-dimensional nanomaterials may enable the development of applications in powering nanodevices, adaptive bioprobes and tunable/stretchable electronics/optoelectronics.

  10. Consequences of atomic layer etching on wafer scale uniformity in inductively coupled plasmas

    Science.gov (United States)

    Huard, Chad M.; Lanham, Steven J.; Kushner, Mark J.

    2018-04-01

    Atomic layer etching (ALE) typically divides the etching process into two self-limited reactions. One reaction passivates a single layer of material while the second preferentially removes the passivated layer. As such, under ideal conditions the wafer scale uniformity of ALE should be independent of the uniformity of the reactant fluxes onto the wafers, provided all surface reactions are saturated. The passivation and etch steps should individually asymptotically saturate after a characteristic fluence of reactants has been delivered to each site. In this paper, results from a computational investigation are discussed regarding the uniformity of ALE of Si in Cl2 containing inductively coupled plasmas when the reactant fluxes are both non-uniform and non-ideal. In the parameter space investigated for inductively coupled plasmas, the local etch rate for continuous processing was proportional to the ion flux. When operated with saturated conditions (that is, both ALE steps are allowed to self-terminate), the ALE process is less sensitive to non-uniformities in the incoming ion flux than continuous etching. Operating ALE in a sub-saturation regime resulted in less uniform etching. It was also found that ALE processing with saturated steps requires a larger total ion fluence than continuous etching to achieve the same etch depth. This condition may result in increased resist erosion and/or damage to stopping layers using ALE. While these results demonstrate that ALE provides increased etch depth uniformity, they do not show an improved critical dimension uniformity in all cases. These possible limitations to ALE processing, as well as increased processing time, will be part of the process optimization that includes the benefits of atomic resolution and improved uniformity.

  11. Low-temperature atomic layer deposition of MgO thin films on Si

    International Nuclear Information System (INIS)

    Vangelista, S; Mantovan, R; Lamperti, A; Tallarida, G; Kutrzeba-Kotowska, B; Spiga, S; Fanciulli, M

    2013-01-01

    Magnesium oxide (MgO) films have been grown by atomic layer deposition in the wide deposition temperature window of 80–350 °C by using bis(cyclopentadienyl)magnesium and H 2 O precursors. MgO thin films are deposited on both HF-last Si(1 0 0) and SiO 2 /Si substrates at a constant growth rate of ∼0.12 nm cycle −1 . The structural, morphological and chemical properties of the synthesized MgO thin films are investigated by x-ray reflectivity, grazing incidence x-ray diffraction, time-of-flight secondary ion mass spectrometry and atomic force microscopy measurements. MgO layers are characterized by sharp interface with the substrate and limited surface roughness, besides good chemical uniformity and polycrystalline structure for thickness above 7 nm. C–V measurements performed on Al/MgO/Si MOS capacitors, with MgO in the 4.6–11 nm thickness range, allow determining a dielectric constant (κ) ∼ 11. Co layers are grown by chemical vapour deposition in direct contact with MgO without vacuum-break (base pressure 10 −5 –10 −6  Pa). The as-grown Co/MgO stacks show sharp interfaces and no elements interdiffusion among layers. C–V and I–V measurements have been conducted on Co/MgO/Si MOS capacitors. The dielectric properties of MgO are not influenced by the further process of Co deposition. (paper)

  12. Atomic layer deposition of absorbing thin films on nanostructured electrodes for short-wavelength infrared photosensing

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Jixian; Sutherland, Brandon R.; Hoogland, Sjoerd; Fan, Fengjia; Sargent, Edward H., E-mail: ted.sargent@utoronto.ca [Department of Electrical and Computer Engineering, University of Toronto, 10 King' s College Road, Toronto, Ontario M5S 3G4 (Canada); Kinge, Sachin [Advanced Technology, Materials and Research, Research and Development, Hoge Wei 33- Toyota Technical Centre, B-1930 Zaventem (Belgium)

    2015-10-12

    Atomic layer deposition (ALD), prized for its high-quality thin-film formation in the absence of high temperature or high vacuum, has become an industry standard for the large-area deposition of a wide array of oxide materials. Recently, it has shown promise in the formation of nanocrystalline sulfide films. Here, we demonstrate the viability of ALD lead sulfide for photodetection. Leveraging the conformal capabilities of ALD, we enhance the absorption without compromising the extraction efficiency in the absorbing layer by utilizing a ZnO nanowire electrode. The nanowires are first coated with a thin shunt-preventing TiO{sub 2} layer, followed by an infrared-active ALD PbS layer for photosensing. The ALD PbS photodetector exhibits a peak responsivity of 10{sup −2} A W{sup −1} and a shot-derived specific detectivity of 3 × 10{sup 9} Jones at 1530 nm wavelength.

  13. Atomic layer deposition to prevent metal transfer from implants: An X-ray fluorescence study

    Energy Technology Data Exchange (ETDEWEB)

    Bilo, Fabjola [INSTM and Chemistry for Technologies Laboratory, University of Brescia, via Branze, 38, 25123 Brescia (Italy); Borgese, Laura, E-mail: laura.borgese@unibs.itl [INSTM and Chemistry for Technologies Laboratory, University of Brescia, via Branze, 38, 25123 Brescia (Italy); Prost, Josef; Rauwolf, Mirjam; Turyanskaya, Anna; Wobrauschek, Peter; Kregsamer, Peter; Streli, Christina [Atominstitut, TU Wien, Stadionallee 2, 1020 Vienna (Austria); Pazzaglia, Ugo [Dipartimento Specialità Medico Chirurgiche Sc. Radiol. e Sanità Pubblica, University of Brescia, v.le Europa, 11, 25121 Brescia (Italy); Depero, Laura E. [INSTM and Chemistry for Technologies Laboratory, University of Brescia, via Branze, 38, 25123 Brescia (Italy)

    2015-12-30

    Highlights: • Co and Cr migrate from bare alloy implant to the surrounding tissue showing a cluster distribution. • Co and Cr migrate from the TiO{sub 2} coated implant to the surrounding tissue showing a decreasing gradient distribution from the alloy surface. • TiO{sub 2} coating layers obtained by ALD on Co–Cr alloy show a barrier effect for the migration of metals. • The thicker the TiO{sub 2} layer deposited by ALD, the lower the metal migration. • The migration of metals from bare alloy toward the surrounding tissue increases with time. This effect is not detected in the coated samples. - Abstract: We show that Atomic Layer Deposition is a suitable coating technique to prevent metal diffusion from medical implants. The metal distribution in animal bone tissue with inserted bare and coated Co–Cr alloys was evaluated by means of micro X-ray fluorescence mapping. In the uncoated implant, the migration of Co and Cr particles from the bare alloy in the biological tissues is observed just after one month and the number of particles significantly increases after two months. In contrast, no metal diffusion was detected in the implant coated with TiO{sub 2}. Instead, a gradient distribution of the metals was found, from the alloy surface going into the tissue. No significant change was detected after two months of aging. As expected, the thicker is the TiO{sub 2} layer, the lower is the metal migration.

  14. Atomic layer deposition of absorbing thin films on nanostructured electrodes for short-wavelength infrared photosensing

    International Nuclear Information System (INIS)

    Xu, Jixian; Sutherland, Brandon R.; Hoogland, Sjoerd; Fan, Fengjia; Sargent, Edward H.; Kinge, Sachin

    2015-01-01

    Atomic layer deposition (ALD), prized for its high-quality thin-film formation in the absence of high temperature or high vacuum, has become an industry standard for the large-area deposition of a wide array of oxide materials. Recently, it has shown promise in the formation of nanocrystalline sulfide films. Here, we demonstrate the viability of ALD lead sulfide for photodetection. Leveraging the conformal capabilities of ALD, we enhance the absorption without compromising the extraction efficiency in the absorbing layer by utilizing a ZnO nanowire electrode. The nanowires are first coated with a thin shunt-preventing TiO 2 layer, followed by an infrared-active ALD PbS layer for photosensing. The ALD PbS photodetector exhibits a peak responsivity of 10 −2  A W −1 and a shot-derived specific detectivity of 3 × 10 9  Jones at 1530 nm wavelength

  15. Investigations on structural iron electrochemical properties in layered silicates using massive mica electrodes

    International Nuclear Information System (INIS)

    Hadi, J.; Ignatiadis, I.; Tournassat, C.; Charlet, L.; Silvester, E.

    2012-01-01

    Document available in extended abstract form only. Nuclear waste repositories are being installed in deep excavated rock formations in some places in Europe to isolate and store radioactive waste. In France, the Callovo-Oxfordian formation (COx) is a potential candidate for a nuclear waste repository. The redox reactivity of COx clay rock samples are already under study using microscopic, spectrometric and wet analysis techniques. In order to cross and overcome certain limits by improvement in the knowledge, specific electrodes should be constructed and devoted to the deepening of the electrochemical behaviour of the COx system in different situations. Iron is one of the most common redox species in soils and sedimentary rocks. Iron-bearing phyllosilicates play key roles in various biogeochemical processes. The complexity of the physical and chemical changes involving their structural iron makes the studies of its redox properties challenging. Most of the recent reported efforts were focused on probing Fe redox on finely powdered clay particles, and have been hampered by inadequate interactions between particles and electrodes. Moreover, such experiments usually involve redox probe ions, thus adding supplementary difficulties in the determination of structural iron redox parameters such as redox potential (Eh) and kinetics. The present study aims at qualitatively investigating the above mentioned phenomena on minerals like iron-bearing micas. In the current work, we present initial insights regarding efforts to build a direct electrical interface between solid electrodes and conveniently shaped macroscopic mica crystals in order to investigate the redox properties of structural iron in dry and aqueous environments, in the presence of representative perturbations. A classical three electrode system has been used for voltammetric measurements. Platinum plate was the counter electrode. Potentials have been measured against either silver-silver chloride electrode or

  16. The electric double layer put to work : thermal physics at electrochemical interfaces

    NARCIS (Netherlands)

    Janssen, M.A.

    2017-01-01

    Where charged electrode surfaces meet fluids that contain mobile ions, so-called electric double layers (EDLs) form to screen the electric surface charge by a diffuse cloud of counterionic charge in the fluid phase. This double layer has been studied for over a century and is of paramount importance

  17. Performance of palladium nanoparticle–graphene composite as an efficient electrode material for electrochemical double layer capacitors

    International Nuclear Information System (INIS)

    Dar, Riyaz A.; Giri, Lily; Karna, Shashi P.; Srivastava, Ashwini K.

    2016-01-01

    Highlights: • Single step synthesis of palladium nanoparticles decorated-graphene nanocomposite. • Improved electron transfer kinetics and superior capacitive performance. • High specific capacitance of 637 F g −1 at a current density of 1.25 A g −1 . • Retention of 91.4% of its initial capacitance after 10000 cycles of testing. - Abstract: Palladium nanoparticle–graphene nanosheet composite (PdNP–GN) is demonstrated as an efficient electrode material in energy storage applications in supercapacitors. Palladium nanoparticle (PdNP) decorated graphene nanosheet (GN) composite was synthesized via a chemical approach in a single step by the simultaneous reduction of graphene oxide (GO) and palladium chloride from the aqueous phase using ascorbic acid as reducing agent. The materials were characterized by scanning and high resolution transmission electron microscopy, Raman, X-ray diffraction and energy dispersive X-ray spectroscopy which demonstrate that the metal nanoparticles have been uniformly deposited on the surface of graphene nanosheets. The synthesized material has been analyzed by cyclic voltammetry, electrochemical impedance spectrometry and chronopotentiometry using 1 M KCl as the supporting electrolyte for its application in electrochemical double layer supercapacitors. PdNPs-GN composite showed improved electron transfer kinetics and superior capacitive performance with large specific capacitance of 637 F g −1 , excellent cyclic performance and maximum energy and power densities of 56 Wh kg −1 and 1166 W kg −1 , respectively at a current density of 1.25 A g −1 . This highlights the importance of the synergetic effects of electrochemically efficient Pd nanoparticles and graphene for energy storage applications in supercapacitors.

  18. The photovoltaic impact of atomic layer deposited TiO2 interfacial layer on Si-based photodiodes

    Science.gov (United States)

    Karabulut, Abdulkerim; Orak, İkram; Türüt, Abdulmecit

    2018-06-01

    In present work, photocurrent, current-voltage (I-V) and capacitance/conductance-voltage-frequency (C/G-V-f) measurements were analyzed for the photodiode and diode parameters of Al/TiO2/p-Si structure. The TiO2 thin film structure was deposited on p-Si by using atomic layer deposition technique (ALD) and its thickness was about 10 nm. The surface morphology of TiO2 coated on p-Si structure was observed via atomic force microscope (AFM). Barrier height (Φb) and ideality factor (n) values of device were found to be 0.80 eV, 0.70 eV, 0.56 eV and 1.04, 2.24, 10.27 under dark, 10 and 100 mW/cm2, respectively. Some photodiodes parameters such as fill factor (FF), power efficiency (%η), open circuit voltage (Voc), short circuit current (Isc) were obtained from I-V measurement under different light intensity. FF and η were accounted 49.2, 39,0 and 0.05, 0.45 under 10 and 100 mW/cm2 light power intensity, respectively. C-2-V graph was plotted from C-V-f measurements and zero bias voltage (V0), donor concentration (Nd), Fermi energy (EF), barrier height (Φb) and maximum electric field (Em) were determined from C-2-V data for different frequencies. The electrical and photocurrent values demonstrated that it can be used for photodiode, photo detector and photo sensing applications.

  19. Layer by Layer Ex-Situ Deposited Cobalt-Manganese Oxide as Composite Electrode Material for Electrochemical Capacitor.

    Science.gov (United States)

    Rusi; Chan, P Y; Majid, S R

    2015-01-01

    The composite metal oxide electrode films were fabricated using ex situ electrodeposition method with further heating treatment at 300°C. The obtained composite metal oxide film had a spherical structure with mass loading from 0.13 to 0.21 mg cm(-2). The structure and elements of the composite was investigated using X-ray diffraction (XRD) and energy dispersive X-ray (EDX). The electrochemical performance of different composite metal oxides was studied by cyclic voltammetry (CV) and galvanostatic charge-discharge (CD). As an active electrode material for a supercapacitor, the Co-Mn composite electrode exhibits a specific capacitance of 285 Fg(-1) at current density of 1.85 Ag(-1) in 0.5 M Na2SO4 electrolyte. The best composite electrode, Co-Mn electrode was then further studied in various electrolytes (i.e., 0.5 M KOH and 0.5 M KOH/0.04 M K3Fe(CN) 6 electrolytes). The pseudocapacitive nature of the material of Co-Mn lead to a high specific capacitance of 2.2 x 10(3) Fg(-1) and an energy density of 309 Whkg(-1) in a 0.5 M KOH/0.04 M K3Fe(CN) 6 electrolyte at a current density of 10 Ag(-1). The specific capacitance retention obtained 67% of its initial value after 750 cycles. The results indicate that the ex situ deposited composite metal oxide nanoparticles have promising potential in future practical applications.

  20. Hollow inorganic nanospheres and nanotubes with tunable wall thicknesses by atomic layer deposition on self-assembled polymeric templates

    NARCIS (Netherlands)

    Ras, Robin H. A.; Kemell, Marianna; de Wit, Joost; Ritala, Mikko; ten Brinke, Gerrit; Leskela, Markku; Ikkala, Olli; Leskelä, Markku

    2007-01-01

    The construction of inorganic nanostructures with hollow interiors is demonstrated by coating self-assembled polymeric nano-objects with a thin Al2O3 layer by atomic layer deposition (ALD), followed by removal of the polymer template upon heating. The morphology of the nano-object (i.e., spherical

  1. Preparation of three-dimensional nitrogen-doped graphene layers by gas foaming method and its electrochemical capactive behavior

    International Nuclear Information System (INIS)

    Hao, Junnan; Shu, Dong; Guo, Songtao; Gao, Aimei; He, Chun; Zhong, Yayun; Liao, Yuqing; Huang, Yulan; Zhong, Jie

    2016-01-01

    Highlights: • A three-dimensional porous graphene layers was prepared via a gas foaming method. • Melamine was the nitrogen source to synthesize the N-doped 3D graphene layers. • The specific surface area of 3D N-doped graphene material is as high as 1196 m 2 g −1 . • The 3D N-doped graphene specific capacitance is 335 F g −1 in three-electrode system. • The energy density of 3D N-doped graphene reaches 58.1 Wh kg −1 in a symmetric cell. - Abstract: A porous graphene layers with a three-dimensional structure (3DG) was prepared via a gas foaming method based on a polymeric predecessor. This intimately interconnected 3DG structure not only significantly increases the specific surface area but also provides more channels to facilitate electron transport. In addition, 3D N-doped (3DNG) layers materials were synthesized using melamine as a nitrogen source. The nitrogen content in the 3DNG layers significantly influenced the electrochemical performance. The sample denoted as 3DNG-2 exhibited a specific capacitance of 335.2 F g −1 at a current density of 1 A g −1 in a three-electrode system. Additionally, 3DNG-2 exhibited excellent electrochemical performance in aqueous and organic electrolytes using a two-electrode symmetric cell. An energy density of 58.1 Wh kg −1 at a power density of 2500 W kg −1 was achieved, which is approximately 3 times that (19.6 Wh kg −1 ) in an aqueous electrolyte in a two-electrode system. After 1000 cycles, the capacity retention in aqueous electrolyte was more than 99.0%, and this retention in organic electrolytes was more than 89.4%, which demonstrated its excellent cycle stability. This performance makes 3DNG-2 a promising candidate as an electrode material in high-power and high-energy supercapacitor applications.

  2. Atomic-Layer-Deposited AZO Outperforms ITO in High-Efficiency Polymer Solar Cells

    KAUST Repository

    Kan, Zhipeng

    2018-05-11

    Tin-doped indium oxide (ITO) transparent conducting electrodes are widely used across the display industry, and are currently the cornerstone of photovoltaic device developments, taking a substantial share in the manufacturing cost of large-area modules. However, cost and supply considerations are set to limit the extensive use of indium for optoelectronic device applications and, in turn, alternative transparent conducting oxide (TCO) materials are required. In this report, we show that aluminum-doped zinc oxide (AZO) thin films grown by atomic layer deposition (ALD) are sufficiently conductive and transparent to outperform ITO as the cathode in inverted polymer solar cells. Reference polymer solar cells made with atomic-layer-deposited AZO cathodes, PCE10 as the polymer donor and PC71BM as the fullerene acceptor (model systems), reach power conversion efficiencies of ca. 10% (compared to ca. 9% with ITO-coated glass), without compromising other figures of merit. These ALD-grown AZO electrodes are promising for a wide range of optoelectronic device applications relying on TCOs.

  3. MoS2 solid-lubricating film fabricated by atomic layer deposition on Si substrate

    Science.gov (United States)

    Huang, Yazhou; Liu, Lei; Lv, Jun; Yang, Junjie; Sha, Jingjie; Chen, Yunfei

    2018-04-01

    How to reduce friction for improving efficiency in the usage of energy is a constant challenge. Layered material like MoS2 has long been recognized as an effective surface lubricant. Due to low interfacial shear strengths, MoS2 is endowed with nominal frictional coefficient. In this work, MoS2 solid-lubricating film was directly grown by atomic layer deposition (ALD) on Si substrate using MoCl5 and H2S. Various methods were used to observe the grown MoS2 film. Moreover, nanotribological properties of the film were observed by an atomic force microscope (AFM). Results show that MoS2 film can effectively reduce the friction force by about 30-45% under different loads, indicating the huge application value of the film as a solid lubricant. Besides the interlayer-interfaces-sliding, the smaller capillary is another reason why the grown MoS2 film has smaller friction force than that of Si.

  4. Tailoring properties of lossy-mode resonance optical fiber sensors with atomic layer deposition technique

    Science.gov (United States)

    Kosiel, Kamil; Koba, Marcin; Masiewicz, Marcin; Śmietana, Mateusz

    2018-06-01

    The paper shows application of atomic layer deposition (ALD) technique as a tool for tailoring sensorial properties of lossy-mode-resonance (LMR)-based optical fiber sensors. Hafnium dioxide (HfO2), zirconium dioxide (ZrO2), and tantalum oxide (TaxOy), as high-refractive-index dielectrics that are particularly convenient for LMR-sensor fabrication, were deposited by low-temperature (100 °C) ALD ensuring safe conditions for thermally vulnerable fibers. Applicability of HfO2 and ZrO2 overlays, deposited with ALD-related atomic level thickness accuracy for fabrication of LMR-sensors with controlled sensorial properties was presented. Additionally, for the first time according to our best knowledge, the double-layer overlay composed of two different materials - silicon nitride (SixNy) and TaxOy - is presented for the LMR fiber sensors. The thin films of such overlay were deposited by two different techniques - PECVD (the SixNy) and ALD (the TaxOy). Such approach ensures fast overlay fabrication and at the same time facility for resonant wavelength tuning, yielding devices with satisfactory sensorial properties.

  5. Simulation and growing study of Cu–Al–S thin films deposited by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Duclaux, L., E-mail: loraine-externe.duclaux@edf.fr [Institute of Research and Development on Photovoltaic Energy (IRDEP), EDF R& D/CNRS/ChimieParistech, UMR 7174, 6 quai Watier, 78401 Chatou (France); Donsanti, F.; Vidal, J. [Institute of Research and Development on Photovoltaic Energy (IRDEP), EDF R& D/CNRS/ChimieParistech, UMR 7174, 6 quai Watier, 78401 Chatou (France); Bouttemy, M. [Lavoisier Institute of Versailles, UMR 8180, 45 avenue des Etats-Unis, 78035 Versailles cedex (France); Schneider, N.; Naghavi, N. [Institute of Research and Development on Photovoltaic Energy (IRDEP), EDF R& D/CNRS/ChimieParistech, UMR 7174, 6 quai Watier, 78401 Chatou (France)

    2015-11-02

    In this paper, we have explored the potential of Cu–Al–S compounds as p-type transparent conducting material by means of atomistic simulation using CuAlS{sub 2} as a reference ternary compound and atomic layer deposition (ALD) growth. We have identified key intrinsic point defects acting either as shallow acceptor or deep donor which define the conductivity of CuAlS{sub 2}. Higher p-type conductivity was found to be achievable under metal-poor and chalcogen-rich growth conditions. According to this precept, ALD growth of Cu{sub x}Al{sub y}S{sub z} was attempted using Cu(acac){sub 2} and Al(CH{sub 3}){sub 3} as precursors for Cu and Al respectively and under H{sub 2}S atmosphere. While as grown thin films present low content of Al, it influences the band gap values as well as the obtained structures. - Highlights: • Ab-initio investigation of CuAlS{sub 2} • Indentification of two opposite main-contributive intrinsic defects on the conductivity: V{sub Cu} and Al{sub Cu} • Synthesis of Cu-Al-S ternary compound using atomic layer deposition • Impact of aluminum insertion on the optical and structural properties of the films.

  6. Kinetic study on hot-wire-assisted atomic layer deposition of nickel thin films

    International Nuclear Information System (INIS)

    Yuan, Guangjie; Shimizu, Hideharu; Momose, Takeshi; Shimogaki, Yukihiro

    2014-01-01

    High-purity Ni films were deposited using hot-wire-assisted atomic layer deposition (HW-ALD) at deposition temperatures of 175, 250, and 350 °C. Negligible amount of nitrogen or carbon contamination was detected, even though the authors used NH 2 radical as the reducing agent and nickelocene as the precursor. NH 2 radicals were generated by the thermal decomposition of NH 3 with the assist of HW and used to reduce the adsorbed metal growth precursors. To understand and improve the deposition process, the kinetics of HW-ALD were analyzed using a Langmuir-type model. Unlike remote-plasma-enhanced atomic layer deposition, HW-ALD does not lead to plasma-induced damage. This is a significant advantage, because the authors can supply sufficient NH 2 radicals to deposit high-purity metallic films by adjusting the distance between the hot wire and the substrate. NH 2 radicals have a short lifetime, and it was important to use a short distance between the radical generation site and substrate. Furthermore, the impurity content of the nickel films was independent of the deposition temperature, which is evidence of the temperature-independent nature of the NH 2 radical flux and the reactivity of the NH 2 radicals

  7. Chemical resistance of thin film materials based on metal oxides grown by atomic layer deposition

    International Nuclear Information System (INIS)

    Sammelselg, Väino; Netšipailo, Ivan; Aidla, Aleks; Tarre, Aivar; Aarik, Lauri; Asari, Jelena; Ritslaid, Peeter; Aarik, Jaan

    2013-01-01

    Etching rate of technologically important metal oxide thin films in hot sulphuric acid was investigated. The films of Al-, Ti-, Cr-, and Ta-oxides studied were grown by atomic layer deposition (ALD) method on silicon substrates from different precursors in large ranges of growth temperatures (80–900 °C) in order to reveal process parameters that allow deposition of coatings with higher chemical resistance. The results obtained demonstrate that application of processes that yield films with lower concentration of residual impurities as well as crystallization of films in thermal ALD processes leads to significant decrease of etching rate. Crystalline films of materials studied showed etching rates down to values of < 5 pm/s. - Highlights: • Etching of atomic layer deposited thin metal oxide films in hot H 2 SO 4 was studied. • Smallest etching rates of < 5 pm/s for TiO 2 , Al 2 O 3 , and Cr 2 O 3 were reached. • Highest etching rate of 2.8 nm/s for Al 2 O 3 was occurred. • Remarkable differences in etching of non- and crystalline films were observed

  8. Self-assembly based plasmonic arrays tuned by atomic layer deposition for extreme visible light absorption.

    Science.gov (United States)

    Hägglund, Carl; Zeltzer, Gabriel; Ruiz, Ricardo; Thomann, Isabell; Lee, Han-Bo-Ram; Brongersma, Mark L; Bent, Stacey F

    2013-07-10

    Achieving complete absorption of visible light with a minimal amount of material is highly desirable for many applications, including solar energy conversion to fuel and electricity, where benefits in conversion efficiency and economy can be obtained. On a fundamental level, it is of great interest to explore whether the ultimate limits in light absorption per unit volume can be achieved by capitalizing on the advances in metamaterial science and nanosynthesis. Here, we combine block copolymer lithography and atomic layer deposition to tune the effective optical properties of a plasmonic array at the atomic scale. Critical coupling to the resulting nanocomposite layer is accomplished through guidance by a simple analytical model and measurements by spectroscopic ellipsometry. Thereby, a maximized absorption of light exceeding 99% is accomplished, of which up to about 93% occurs in a volume-equivalent thickness of gold of only 1.6 nm. This corresponds to a record effective absorption coefficient of 1.7 × 10(7) cm(-1) in the visible region, far exceeding those of solid metals, graphene, dye monolayers, and thin film solar cell materials. It is more than a factor of 2 higher than that previously obtained using a critically coupled dye J-aggregate, with a peak width exceeding the latter by 1 order of magnitude. These results thereby substantially push the limits for light harvesting in ultrathin, nanoengineered systems.

  9. ATOMIC LAYER DEPOSITION OF TITANIUM OXIDE THIN FILMS ONNANOPOROUS ALUMINA TEMPLATES FOR MEDICAL APPLICATIONS

    Energy Technology Data Exchange (ETDEWEB)

    Brigmon, R.

    2009-05-05

    Nanostructured materials may play a significant role in controlled release of pharmacologic agents for treatment of cancer. Many nanoporous polymer materials are inadequate for use in drug delivery. Nanoporous alumina provides several advantages over other materials for use in controlled drug delivery and other medical applications. Atomic layer deposition was used to coat all the surfaces of the nanoporous alumina membrane in order to reduce the pore size in a controlled manner. Both the 20 nm and 100 nm titanium oxide-coated nanoporous alumina membranes did not exhibit statistically lower viability compared to the uncoated nanoporous alumina membrane control materials. In addition, 20 nm pore size titanium oxide-coated nanoporous alumina membranes exposed to ultraviolet light demonstrated activity against Escherichia coli and Staphylococcus aureus bacteria. Nanostructured materials prepared using atomic layer deposition may be useful for delivering a pharmacologic agent at a precise rate to a specific location in the body. These materials may serve as the basis for 'smart' drug delivery devices, orthopedic implants, or self-sterilizing medical devices.

  10. Selective deposition contact patterning using atomic layer deposition for the fabrication of crystalline silicon solar cells

    International Nuclear Information System (INIS)

    Cho, Young Joon; Shin, Woong-Chul; Chang, Hyo Sik

    2014-01-01

    Selective deposition contact (SDC) patterning was applied to fabricate the rear side passivation of crystalline silicon (Si) solar cells. By this method, using screen printing for contact patterning and atomic layer deposition for the passivation of Si solar cells with Al 2 O 3 , we produced local contacts without photolithography or any laser-based processes. Passivated emitter and rear-contact solar cells passivated with ozone-based Al 2 O 3 showed, for the SDC process, an up-to-0.7% absolute conversion-efficiency improvement. The results of this experiment indicate that the proposed method is feasible for conversion-efficiency improvement of industrial crystalline Si solar cells. - Highlights: • We propose a local contact formation process. • Local contact forms a screen print and an atomic layer deposited-Al 2 O 3 film. • Ozone-based Al 2 O 3 thin film was selectively deposited onto patterned silicon. • Selective deposition contact patterning method can increase cell-efficiency by 0.7%

  11. Modular injector integrated linear apparatus with motion profile optimization for spatial atomic layer deposition

    Science.gov (United States)

    Wang, Xiaolei; Li, Yun; Lin, Jilong; Shan, Bin; Chen, Rong

    2017-11-01

    A spatial atomic layer deposition apparatus integrated with a modular injector and a linear motor has been designed. It consists of four parts: a precursor delivery manifold, a modular injector, a reaction zone, and a driving unit. An injector with multi-layer structured channels is designed to help improve precursor distribution homogeneity. During the back and forth movement of the substrate at high speed, the inertial impact caused by jerk and sudden changes of acceleration will degrade the film deposition quality. Such residual vibration caused by inertial impact will aggravate the fluctuation of the gap distance between the injector and the substrate in the deposition process. Thus, an S-curve motion profile is implemented to reduce the large inertial impact, and the maximum position error could be reduced by 84%. The microstructure of the film under the S-curve motion profile shows smaller root-mean-square and scanning voltage amplitude under an atomic force microscope, which verifies the effectiveness of the S-curve motion profile in reducing the residual vibration and stabilizing the gap distance between the injector and the substrate. The film deposition rate could reach 100 nm/min while maintaining good uniformity without obvious periodic patterns on the surface.

  12. Atomic-Layer-Deposited AZO Outperforms ITO in High-Efficiency Polymer Solar Cells

    KAUST Repository

    Kan, Zhipeng; Wang, Zhenwei; Firdaus, Yuliar; Babics, Maxime; Alshareef, Husam N.; Beaujuge, Pierre

    2018-01-01

    Tin-doped indium oxide (ITO) transparent conducting electrodes are widely used across the display industry, and are currently the cornerstone of photovoltaic device developments, taking a substantial share in the manufacturing cost of large-area modules. However, cost and supply considerations are set to limit the extensive use of indium for optoelectronic device applications and, in turn, alternative transparent conducting oxide (TCO) materials are required. In this report, we show that aluminum-doped zinc oxide (AZO) thin films grown by atomic layer deposition (ALD) are sufficiently conductive and transparent to outperform ITO as the cathode in inverted polymer solar cells. Reference polymer solar cells made with atomic-layer-deposited AZO cathodes, PCE10 as the polymer donor and PC71BM as the fullerene acceptor (model systems), reach power conversion efficiencies of ca. 10% (compared to ca. 9% with ITO-coated glass), without compromising other figures of merit. These ALD-grown AZO electrodes are promising for a wide range of optoelectronic device applications relying on TCOs.

  13. Impedance Spectroscopic Investigation of Proton Conductivity in Nafion Using Transient Electrochemical Atomic Force Microscopy (AFM

    Directory of Open Access Journals (Sweden)

    Emil Roduner

    2012-06-01

    Full Text Available Spatially resolved impedance spectroscopy of a Nafion polyelectrolyte membrane is performed employing a conductive and Pt-coated tip of an atomic force microscope as a point-like contact and electrode. The experiment is conducted by perturbing the system by a rectangular voltage step and measuring the incurred current, followed by Fourier transformation and plotting the impedance against the frequency in a conventional Bode diagram. To test the potential and limitations of this novel method, we present a feasibility study using an identical hydrogen atmosphere at a well-defined relative humidity on both sides of the membrane. It is demonstrated that good quality impedance spectra are obtained in a frequency range of 0.2–1,000 Hz. The extracted polarization curves exhibit a maximum current which cannot be explained by typical diffusion effects. Simulation based on equivalent circuits requires a Nernst element for restricted diffusion in the membrane which suggests that this effect is based on the potential dependence of the electrolyte resistance in the high overpotential region.

  14. Low-temperature atomic layer deposition of TiO2 thin layers for the processing of memristive devices

    International Nuclear Information System (INIS)

    Porro, Samuele; Conti, Daniele; Guastella, Salvatore; Ricciardi, Carlo; Jasmin, Alladin; Pirri, Candido F.; Bejtka, Katarzyna; Perrone, Denis; Chiolerio, Alessandro

    2016-01-01

    Atomic layer deposition (ALD) represents one of the most fundamental techniques capable of satisfying the strict technological requirements imposed by the rapidly evolving electronic components industry. The actual scaling trend is rapidly leading to the fabrication of nanoscaled devices able to overcome limits of the present microelectronic technology, of which the memristor is one of the principal candidates. Since their development in 2008, TiO 2 thin film memristors have been identified as the future technology for resistive random access memories because of their numerous advantages in producing dense, low power-consuming, three-dimensional memory stacks. The typical features of ALD, such as self-limiting and conformal deposition without line-of-sight requirements, are strong assets for fabricating these nanosized devices. This work focuses on the realization of memristors based on low-temperature ALD TiO 2 thin films. In this process, the oxide layer was directly grown on a polymeric photoresist, thus simplifying the fabrication procedure with a direct liftoff patterning instead of a complex dry etching process. The TiO 2 thin films deposited in a temperature range of 120–230 °C were characterized via Raman spectroscopy and x-ray photoelectron spectroscopy, and electrical current–voltage measurements taken in voltage sweep mode were employed to confirm the existence of resistive switching behaviors typical of memristors. These measurements showed that these low-temperature devices exhibit an ON/OFF ratio comparable to that of a high-temperature memristor, thus exhibiting similar performances with respect to memory applications

  15. Electrochemically formed passive layers on titanium - preparation and biocompatibility assessment in Hank's balanced salt solution

    International Nuclear Information System (INIS)

    Zhao, B.; Jerkiewicz, G.

    2006-01-01

    Uniform and crack-free passive layers on Ti are prepared using AC voltage in 7.5 wt.% aq. NH 4 ·BF 4 at 25 o C. The passive layers possess coloration (wide spectrum of colors) that depends on the experimental conditions. The biocompatibility of such prepared passive layers is evaluated using corrosion science and analytical techniques. Their corrosion behavior, Ti-ion release, surface roughness, and wettability in Hank's Balanced Salt Solution (HBSS) at 37 o C are the main focus of this work. Open-circuit potential and polarization measurements demonstrate that the corrosion potential (E corr ) of the passive layers becomes more positive than that of the untreated Ti. The value of E corr increases as we increase the AC voltage (VAC). Their corrosion rate (CR) is lower than that of the untreated Ti, and they reduced the Ti-ion release level from 230 to 15 ppb. An increase in the AC voltage frequency (f) leads to a slightly higher level of the Ti-ion release (∼50 ppb). Surface profilometry, optical microscopy, and scanning electron microscopy (SEM) analyses show that prolonged exposure of the passive layers to HBSS results in changes to their surface topography. The passive layers prepared by the application of AC voltage are rougher and more hydrophilic than the untreated Ti. Our methodology of preparing biocompatible passive layers on Ti might be applied as a new surface treatment procedure for Ti implants. (author)

  16. Single step synthesis of gold-amino acid composite, with the evidence of the catalytic hydrogen atom transfer (HAT) reaction, for the electrochemical recognition of Serotonin

    Science.gov (United States)

    Choudhary, Meenakshi; Siwal, Samarjeet; Nandi, Debkumar; Mallick, Kaushik

    2016-03-01

    A composite architecture of amino acid and gold nanoparticles has been synthesized using a generic route of 'in-situ polymerization and composite formation (IPCF)' [1,2]. The formation mechanism of the composite has been supported by a model hydrogen atom (H•≡H++e-) transfer (HAT) type of reaction which belongs to the proton coupled electron transfer (PCET) mechanism. The 'gold-amino acid composite' was used as a catalyst for the electrochemical recognition of Serotonin.

  17. Electrochemical oxidation of 4-chloro phenol over a carbon paste electrode modified with Zn Al layered double hydroxides

    International Nuclear Information System (INIS)

    Hernandez F, D.; Palomar P, M.; Licona S, T. de J.; Romero R, M.; Valente, Jaime S.

    2014-01-01

    A study is presented on the electrochemical oxidation of 4-chloro phenol (4cp) in aqueous solution using a bare carbon paste electrode, Cpe, and another one that was modified with Zn Al layered double hydroxides (Cpe/Zn Al-LDH). The electro-oxidation was effected at ph values ranging from 3 up to 11. It was found through cyclic voltammetry that this process was irreversible, namely, there were no reduction peaks, and that depending on the nature of the electrode, the anodic current was limited either by adsorption (Cpe) or diffusion (Cpe/Zn Al-LDH). The energy required and the oxidation reaction rate depended on the ph and on the nature of the electrode, such that the greater rates were obtained when the Cpe/Zn Al-LDH electrode and acid ph were used. The Zn Al-LDH was characterized by means of X-ray diffraction. (Author)

  18. Powder, paper and foam of few-layer graphene prepared in high yield by electrochemical intercalation exfoliation of expanded graphite.

    Science.gov (United States)

    Wu, Liqiong; Li, Weiwei; Li, Peng; Liao, Shutian; Qiu, Shengqiang; Chen, Mingliang; Guo, Yufen; Li, Qi; Zhu, Chao; Liu, Liwei

    2014-04-09

    A facile and high-yield approach to the preparation of few-layer graphene (FLG) by electrochemical intercalation exfoliation (EIE) of expanded graphite in sulfuric acid electrolyte is reported. Stage-1 H2SO4-graphite intercalation compound is used as a key intermediate in EIE to realize the efficient exfoliation. The yield of the FLG sheets (papers made of the FLG flakes retain excellent conductivity (≈24,500 S m(-1)). Three-dimensional (3D) graphene foams with light weight are fabricated from the FLG flakes by the use of Ni foams as self-sacrifice templates. Furthermore, 3D graphene/Ni foams without any binders, which are used as supercapacitor electrodes in aqueous electrolyte, provide the specific capacitance of 113.2 F g(-1) at a current density of 0.5 A g(-1), retaining 90% capacitance after 1000 cycles. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. CVD synthesis of carbon nanotubes using a finely dispersed cobalt catalyst and their use in double layer electrochemical capacitors

    International Nuclear Information System (INIS)

    Chatterjee, A.K.; Sharon, Maheshwar; Banerjee, Rangan; Neumann-Spallart, Michael

    2003-01-01

    Carbon nanotubes (CNT) were obtained by chemical vapour deposition (CVD), decomposing turpentine oil over finely dispersed Co metal as a catalyst at 675 deg. C. Scanning electron microscope (SEM) and transmission electron microscope (TEM) images reveal that the nanotubes are densely packed and of 10-50 nm in diameter. The XRD pattern of purified CNT shows that they are graphitic in nature. Resistivity measurements of these CNT indicate that they are highly conducting. Hall measurements of CNT reveal that electrons are the majority carriers with a carrier concentration of 1.35x10 20 cm -3 . Cyclic voltammetry (CV) and constant current charging/discharging was used to characterise the behaviour of electrochemical double layer capacitors of purified CNT with H 2 SO 4 . For CNT/2 M H 2 SO 4 /CNT, a capacitance of 12 F g -1 (based on the weight of the active material) was obtained

  20. TiO2 coated Si nanowire electrodes for electrochemical double layer capacitors in room temperature ionic liquid

    International Nuclear Information System (INIS)

    Konstantinou, F; Shougee, A; Albrecht, T; Fobelets, K

    2017-01-01

    Three TiO 2 deposition processes are used to coat the surface of Si nanowire array electrodes for electrochemical double layer capacitors in room temperature ionic liquid [Bmim][NTF 2 ]. The fabrication processes are based on wet chemistry only and temperature treatments are kept below 450 °C. Successful TiO 2 coatings are found to be those that are carried out at low pressure and with low TiO 2 coverage to avoid nanowires breakage. The best TiO 2 coated Si nanowire array electrode in [Bmim][NTF 2 ] showed energy densities of 0.9 Wh·kg −1 and power densities of 2.2 kW·kg −1 with a nanowire length of ∼10 µ m. (paper)

  1. Electrochemical oxidation of 4-chloro phenol over a carbon paste electrode modified with Zn Al layered double hydroxides

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez F, D.; Palomar P, M.; Licona S, T. de J.; Romero R, M. [Universidad Autonoma Metropolitana, Unidad Azcapotzalco, Departamento de Materiales, Av. San Pablo 180, Col. Reynosa-Tamaulipas, 02200 Mexico D. F. (Mexico); Valente, Jaime S., E-mail: mepp@correo.azc.uam.mx [Instituto Mexicano del Petroleo, Eje Central No. 152, 07730 Mexico D. F. (Mexico)

    2014-07-01

    A study is presented on the electrochemical oxidation of 4-chloro phenol (4cp) in aqueous solution using a bare carbon paste electrode, Cpe, and another one that was modified with Zn Al layered double hydroxides (Cpe/Zn Al-LDH). The electro-oxidation was effected at ph values ranging from 3 up to 11. It was found through cyclic voltammetry that this process was irreversible, namely, there were no reduction peaks, and that depending on the nature of the electrode, the anodic current was limited either by adsorption (Cpe) or diffusion (Cpe/Zn Al-LDH). The energy required and the oxidation reaction rate depended on the ph and on the nature of the electrode, such that the greater rates were obtained when the Cpe/Zn Al-LDH electrode and acid ph were used. The Zn Al-LDH was characterized by means of X-ray diffraction. (Author)

  2. SnO2 anode surface passivation by atomic layer deposited HfO2 improves li-ion battery performance

    KAUST Repository

    Yesibolati, Nulati

    2014-03-14

    For the first time, it is demonstrated that nanoscale HfO2 surface passivation layers formed by atomic layer deposition (ALD) significantly improve the performance of Li ion batteries with SnO2-based anodes. Specifically, the measured battery capacity at a current density of 150 mAg -1 after 100 cycles is 548 and 853 mAhg-1 for the uncoated and HfO2-coated anodes, respectively. Material analysis reveals that the HfO2 layers are amorphous in nature and conformably coat the SnO2-based anodes. In addition, the analysis reveals that ALD HfO2 not only protects the SnO2-based anodes from irreversible reactions with the electrolyte and buffers its volume change, but also chemically interacts with the SnO2 anodes to increase battery capacity, despite the fact that HfO2 is itself electrochemically inactive. The amorphous nature of HfO2 is an important factor in explaining its behavior, as it still allows sufficient Li diffusion for an efficient anode lithiation/delithiation process to occur, leading to higher battery capacity. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Oxygen vacancy defect engineering using atomic layer deposited HfAlOx in multi-layered gate stack

    Science.gov (United States)

    Bhuyian, M. N.; Sengupta, R.; Vurikiti, P.; Misra, D.

    2016-05-01

    This work evaluates the defects in high quality atomic layer deposited (ALD) HfAlOx with extremely low Al (estimated by the high temperature current voltage measurement shows that the charged oxygen vacancies, V+/V2+, are the primary source of defects in these dielectrics. When Al is added in HfO2, the V+ type defects with a defect activation energy of Ea ˜ 0.2 eV modify to V2+ type to Ea ˜ 0.1 eV with reference to the Si conduction band. When devices were stressed in the gate injection mode for 1000 s, more V+ type defects are generated and Ea reverts back to ˜0.2 eV. Since Al has a less number of valence electrons than do Hf, the change in the co-ordination number due to Al incorporation seems to contribute to the defect level modifications. Additionally, the stress induced leakage current behavior observed at 20 °C and at 125 °C demonstrates that the addition of Al in HfO2 contributed to suppressed trap generation process. This further supports the defect engineering model as reduced flat-band voltage shifts were observed at 20 °C and at 125 °C.

  4. Atomic layer deposition assisted pattern transfer technology for ultra-thin block copolymer films

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Wenhui; Luo, Jun; Meng, Lingkuan; Li, Junjie; Xiang, Jinjuan; Li, Junfeng; Wang, Wenwu; Chen, Dapeng; Ye, Tianchun; Zhao, Chao

    2016-08-31

    As an emerging developing technique for next-generation lithography, directed self-assembly (DSA) of block copolymer (BCP) has attracted numerous attention and has been a potential alternative to supplement the intrinsic limitations of conventional photolithography. In this work, the self-assembling properties of a lamellar diblock copolymer poly(styrene-b-methylmethacrylate) (PS-b-PMMA, 22k-b-22k, L{sub 0} = 25 nm) on Si substrate and an atomic layer deposition (ALD)-assisted pattern transfer technology for the application of DSA beyond 16/14 nm complementary metal oxide semiconductor (CMOS) technology nodes, were investigated. Firstly, two key processing parameters of DSA, i.e. annealing temperatures and durations of BCP films, were optimized to achieve low defect density and high productivity. After phase separation of BCP films, self-assembling patterns of low defect density should be transferred to the substrate. However, due to the nano-scale thickness and the weak resistance of BCP films to dry etching, it is nearly impossible to transfer the BCP patterns directly to the substrate. Therefore, an ALD-based technology was explored in this work, in which deposited Al{sub 2}O{sub 3} selectively reacts with PMMA blocks thus hardening the PMMA patterns. After removing PS blocks by plasma etching, hardened PMMA patterns were left and transferred to underneath SiO{sub 2} hard mask layer. Using this patterned hard mask, nanowire array of 25 nm pitch were realized on Si substrate. From this work, a high-throughput DSA baseline flow and related ALD-assisted pattern transfer technique were developed and proved to have good capability with the mainstream CMOS technology. - Highlights: • Optimization on self-assembly process for high productivity and low defectivity • Enhancement of etching ratio and resistance by atomic layer deposition (ALD) • A hard mask was used for pattern quality improvement and contamination control.

  5. Atomic layer deposition of zirconium dioxide from zirconium tetrachloride and ozone

    Energy Technology Data Exchange (ETDEWEB)

    Kukli, Kaupo, E-mail: kaupo.kukli@helsinki.fi [Department of Chemistry, University of Helsinki, P.O. Box 55, FI-00014 Helsinki (Finland); Kemell, Marianna; Köykkä, Joel [Department of Chemistry, University of Helsinki, P.O. Box 55, FI-00014 Helsinki (Finland); Mizohata, Kenichiro [Accelerator Laboratory, Department of Physics, University of Helsinki, P.O. Box 43, FI-00014 Helsinki (Finland); Vehkamäki, Marko; Ritala, Mikko; Leskelä, Markku [Department of Chemistry, University of Helsinki, P.O. Box 55, FI-00014 Helsinki (Finland)

    2015-08-31

    ZrO{sub 2} films were grown by atomic layer deposition using ZrCl{sub 4} and O{sub 3} as precursors. The films were grown on silicon substrates in the temperature range of 220–500 °C. The ALD rate was monotonously decreasing from 0.085 to 0.060 nm/cycle in this temperature range towards the highest temperatures studied. The content of chlorine in the films did not exceed 0.2 at.% as measured by elastic recoil detection analysis. The content of hydrogen was 0.30 and 0.14 at.% in the films grown at 300 and 400 °C, respectively. Structural studies revealed the films consisting of mixtures of stable monoclinic and metastable tetragonal/cubic polymorphs of ZrO{sub 2}, and dominantly metastable phases of ZrO{sub 2} below and above 300 °C, respectively. Permittivity of dielectric layers in Al/Ti/ZrO{sub 2}/(TiN/)Si capacitors with 15–40 nm thick ZrO{sub 2} ranged between 12 and 25 at 100 kHz and the dielectric breakdown fields were in the range of 1.5–3.0 MV/cm. - Highlights: • ZrO{sub 2} thin films were grown by atomic layer deposition from ZrCl{sub 4} and O{sub 3}. • Relatively high substrate temperatures promoted growth of metastable ZrO{sub 2} phases. • ZrO{sub 2} films exhibited electric properties characteristic of dielectric metal oxides. • ZrO{sub 2} grown in hydrogen- and carbon free process contained low amounts of impurities.

  6. Atoms

    International Nuclear Information System (INIS)

    Fuchs, Alain; Villani, Cedric; Guthleben, Denis; Leduc, Michele; Brenner, Anastasios; Pouthas, Joel; Perrin, Jean

    2014-01-01

    Completed by recent contributions on various topics (atoms and the Brownian motion, the career of Jean Perrin, the evolution of atomic physics since Jean Perrin, relationship between scientific atomism and philosophical atomism), this book is a reprint of a book published at the beginning of the twentieth century in which the author addressed the relationship between atomic theory and chemistry (molecules, atoms, the Avogadro hypothesis, molecule structures, solutes, upper limits of molecular quantities), molecular agitation (molecule velocity, molecule rotation or vibration, molecular free range), the Brownian motion and emulsions (history and general features, statistical equilibrium of emulsions), the laws of the Brownian motion (Einstein's theory, experimental control), fluctuations (the theory of Smoluchowski), light and quanta (black body, extension of quantum theory), the electricity atom, the atom genesis and destruction (transmutations, atom counting)

  7. From Single Atoms to Nanoparticles : Autocatalysis and Metal Aggregation in Atomic Layer Deposition of Pt on TiO2 Nanopowder

    NARCIS (Netherlands)

    Grillo, Fabio; Van Bui, Hao; La Zara, Damiano; Aarnink, Antonius A.I.; Kovalgin, Alexey Y.; Kooyman, Patricia; Kreutzer, Michiel T.; van Ommen, Jan Rudolf

    2018-01-01

    A fundamental understanding of the interplay between ligand-removal kinetics and metal aggregation during the formation of platinum nanoparticles (NPs) in atomic layer deposition of Pt on TiO2 nanopowder using trimethyl(methylcyclo-pentadienyl)platinum(IV) as the precursor and O2 as the coreactant

  8. In-situ atomic layer deposition growth of Hf-oxide

    International Nuclear Information System (INIS)

    Karavaev, Konstantin

    2010-01-01

    We have grown HfO 2 on Si(001) by atomic layer deposition (ALD) using HfCl 4 , TEMAHf, TDMAHf and H 2 O as precursors. The early stages of the ALD were investigated with high-resolution photoelectron spectroscopy and X-ray absorption spectroscopy. We observed the changes occurring in the Si 2p, O 1s, Hf 4f, Hf 4d, and Cl 2p (for HfCl 4 experiment) core level lines after each ALD cycle up to the complete formation of two layers of HfO 2 . The investigation was carried out in situ giving the possibility to determine the properties of the grown film after every ALD cycle or even after a half cycle. This work focused on the advantages in-situ approach in comparison with ex-situ experiments. The study provides to follow the evolution of the important properties of HfO 2 : contamination level, density and stoichiometry, and influence of the experimental parameters to the interface layer formation during ALD. Our investigation shows that in-situ XPS approach for ALD gives much more information than ex-situ experiments. (orig.)

  9. In-situ atomic layer deposition growth of Hf-oxide

    Energy Technology Data Exchange (ETDEWEB)

    Karavaev, Konstantin

    2010-06-17

    We have grown HfO{sub 2} on Si(001) by atomic layer deposition (ALD) using HfCl{sub 4}, TEMAHf, TDMAHf and H{sub 2}O as precursors. The early stages of the ALD were investigated with high-resolution photoelectron spectroscopy and X-ray absorption spectroscopy. We observed the changes occurring in the Si 2p, O 1s, Hf 4f, Hf 4d, and Cl 2p (for HfCl{sub 4} experiment) core level lines after each ALD cycle up to the complete formation of two layers of HfO{sub 2}. The investigation was carried out in situ giving the possibility to determine the properties of the grown film after every ALD cycle or even after a half cycle. This work focused on the advantages in-situ approach in comparison with ex-situ experiments. The study provides to follow the evolution of the important properties of HfO{sub 2}: contamination level, density and stoichiometry, and influence of the experimental parameters to the interface layer formation during ALD. Our investigation shows that in-situ XPS approach for ALD gives much more information than ex-situ experiments. (orig.)

  10. Area-selective atomic layer deposition of platinum using photosensitive polyimide.

    Science.gov (United States)

    Vervuurt, René H J; Sharma, Akhil; Jiao, Yuqing; Kessels, Wilhelmus Erwin M M; Bol, Ageeth A

    2016-10-07

    Area-selective atomic layer deposition (AS-ALD) of platinum (Pt) was studied using photosensitive polyimide as a masking layer. The polyimide films were prepared by spin-coating and patterned using photolithography. AS-ALD of Pt using poly(methyl-methacrylate) (PMMA) masking layers was used as a reference. The results show that polyimide has excellent selectivity towards the Pt deposition, after 1000 ALD cycles less than a monolayer of Pt is deposited on the polyimide surface. The polyimide film could easily be removed after ALD using a hydrogen plasma, due to a combination of weakening of the polyimide resist during Pt ALD and the catalytic activity of Pt traces on the polyimide surface. Compared to PMMA for AS-ALD of Pt, polyimide has better temperature stability. This resulted in an improved uniformity of the Pt deposits and superior definition of the Pt patterns. In addition, due to the absence of reflow contamination using polyimide the nucleation phase during Pt ALD is drastically shortened. Pt patterns down to 3.5 μm were created with polyimide, a factor of ten smaller than what is possible using PMMA, at the typical Pt ALD processing temperature of 300 °C. Initial experiments indicate that after further optimization of the polyimide process Pt features down to 100 nm should be possible, which makes AS-ALD of Pt using photosensitive polyimide a promising candidate for patterning at the nanoscale.

  11. Electrolytes for high voltage electrochemical double layer capacitors: A perspective article

    Science.gov (United States)

    Balducci, A.

    2016-09-01

    The development of innovative electrolyte components is nowadays considered one of the most important aspects for the realization of high energy electrochemical double capacitors (EDLCs). Consequently, in the last years many investigations have been dedicated towards new solvents, new salts and ionic liquids able to replace the current electrolytes. This perspective article aims to supply a critical analysis about the results obtained so far on the development of new electrolytes for high energy EDLCs and to outline the advantages as well as the limits related to the use of these innovative components. Furthermore, this article aims to give indications about the strategies could be used in the future for a further development of advanced electrolytes.

  12. Electrochemical studies of biocatalytic anode of sulfonated graphene/ferritin/glucose oxidase layer-by-layer biocomposite films for mediated electron transfer.

    Science.gov (United States)

    Inamuddin; Haque, Sufia Ul; Naushad, Mu

    2016-06-01

    In this study, a bioanode was developed by using layer-by-layer (LBL) assembly of sulfonated graphene (SG)/ferritin (Frt)/glucose oxidase (GOx). The SG/Frt biocomposite was used as an electron transfer elevator and mediator, respectively. Glucose oxidase (GOx) from Aspergillus niger was applied as a glucose oxidation biocatalyst. The electrocatalytic oxidation of glucose using GOx modified electrode increases with an increase in the concentration of glucose in the range of 10-50mM. The electrochemical measurements of the electrode was carried out by using cyclic voltammetry (CV) at different scan rates (20-100mVs(-1)) in 30mM of glucose solution prepared in 0.3M potassium ferrocyanide (K4Fe(CN)6) and linear sweep voltammetry (LSV). A saturation current density of 50±2mAcm(-2) at a scan rate of 100mVs(-1) for the oxidation of 30Mm glucose is achieved. Copyright © 2016 Elsevier Inc. All rights reserved.

  13. Layer-by-layer self-assembly in the development of electrochemical energy conversion and storage devices from fuel cells to supercapacitors.

    Science.gov (United States)

    Xiang, Yan; Lu, Shanfu; Jiang, San Ping

    2012-11-07

    As one of the most effective synthesis tools, layer-by-layer (LbL) self-assembly technology can provide a strong non-covalent integration and accurate assembly between homo- or hetero-phase compounds or oppositely charged polyelectrolytes, resulting in highly-ordered nanoscale structures or patterns with excellent functionalities and activities. It has been widely used in the developments of novel materials and nanostructures or patterns from nanotechnologies to medical fields. However, the application of LbL self-assembly in the development of highly efficient electrocatalysts, specific functionalized membranes for proton exchange membrane fuel cells (PEMFCs) and electrode materials for supercapacitors is a relatively new phenomenon. In this review, the application of LbL self-assembly in the development and synthesis of key materials of PEMFCs including polyelectrolyte multilayered proton-exchange membranes, methanol-blocking Nafion membranes, highly uniform and efficient Pt-based electrocatalysts, self-assembled polyelectrolyte functionalized carbon nanotubes (CNTs) and graphenes will be reviewed. The application of LbL self-assembly for the development of multilayer nanostructured materials for use in electrochemical supercapacitors will also be reviewed and discussed (250 references).

  14. Coloration of metallic and/or ceramic surfaces obtained by atomic layer deposited nano-coatings

    Energy Technology Data Exchange (ETDEWEB)

    Guzman, L., E-mail: luisg47@gmail.com [Fondazione Bruno Kessler (FBK), Centro Materiali e Microsistemi, Functional Materials & Photonic Structures Unit, via Sommarive 18, 38123 Trento (Italy); Vettoruzzo, F. [Ronda High Tech, via Vegri 83, 36010 Zane’, Vicenza (Italy); Laidani, N. [Fondazione Bruno Kessler (FBK), Centro Materiali e Microsistemi, Functional Materials & Photonic Structures Unit, via Sommarive 18, 38123 Trento (Italy)

    2016-02-29

    By depositing single layer coatings by means of physical vapor techniques, tailoring of their coloration is generally complex because a given color can be obtained only by very high composition control. Physical vapor deposition (PVD) processes are expensive and cannot be easily used for obtaining conformal coating on three-dimensional objects. Moreover PVD coatings exhibit intrinsic defects (columnar structures, pores) that affect their functional properties and applications such as barrier layers. Atomic layer deposition (ALD) technology delivers conformal coatings on different materials with very low defectiveness. A straightforward coloration can be obtained by a combination of two types of layers with different refraction index, deposited to high thickness precision. Computer simulation studies were performed to design the thickness and architecture of multilayer structures, to a total thickness of approximately 100 nm, suitable to modify the typical coloration of some materials, without altering their other physical and chemical properties. The most promising nano-layered structures were then deposited by ALD and tested with regard to their optical properties. Their total thicknesses were specified in such a way to be technically feasible and compatible with future industrial production. The materials employed in this study to build the optical coatings, are two oxides (Al{sub 2}O{sub 3}, TiO{sub 2}) deposited at 120 °C and two nitrides (AlN, TiN), which need a deposition temperature of 400 °C. The possibility of using such modern deposition technology for esthetic and decorative purposes, while maintaining the functional properties, opens perspectives of industrial applications. - Highlights: • Computer simulation is done to design multilayers made of Al{sub 2}O{sub 3}, TiO{sub 2}, AlN, and TiN. • Total thickness (< 120 nm) is specified to be compatible with industrial production. • The most promising nano-layered structures are then produced and

  15. Phase autowaves in the near-electrode layer in the electrochemical cell with a magnetic fluid

    Energy Technology Data Exchange (ETDEWEB)

    Chekanov, V.V.; Kandaurova, N.V., E-mail: candaur18@yandex.ru; Chekanov, V.S.

    2017-06-01

    A change in color of the thin pellicle when light is reflected from the surface of the magnetic fluid at the interface with the transparent electrode in the electric field was observed. The formation of variable thickness near-electrode layer leads to a change in the spectrum of the reflected light depending on the applied voltage. Autowaves, that were observed in the layer are a unique object for the study of self-organization process. - Highlights: • A change of the thin pellicle color in the electric field was observed. • Formation of layer leads to a change in the spectrum of reflected light. • Autowaves with the typical leading centers and spiral waves were observed.

  16. Atomic layer deposition of calcium oxide and calcium hafnium oxide films using calcium cyclopentadienyl precursor

    International Nuclear Information System (INIS)

    Kukli, Kaupo; Ritala, Mikko; Sajavaara, Timo; Haenninen, Timo; Leskelae, Markku

    2006-01-01

    Calcium oxide and calcium hafnium oxide thin films were grown by atomic layer deposition on borosilicate glass and silicon substrates in the temperature range of 205-300 o C. The calcium oxide films were grown from novel calcium cyclopentadienyl precursor and water. Calcium oxide films possessed refractive index 1.75-1.80. Calcium oxide films grown without Al 2 O 3 capping layer occurred hygroscopic and converted to Ca(OH) 2 after exposure to air. As-deposited CaO films were (200)-oriented. CaO covered with Al 2 O 3 capping layers contained relatively low amounts of hydrogen and re-oriented into (111) direction upon annealing at 900 o C. In order to examine the application of CaO in high-permittivity dielectric layers, mixtures of Ca and Hf oxides were grown by alternate CaO and HfO 2 growth cycles at 230 and 300 o C. HfCl 4 was used as a hafnium precursor. When grown at 230 o C, the films were amorphous with equal amounts of Ca and Hf constituents (15 at.%). These films crystallized upon annealing at 750 o C, showing X-ray diffraction peaks characteristic of hafnium-rich phases such as Ca 2 Hf 7 O 16 or Ca 6 Hf 19 O 44 . At 300 o C, the relative Ca content remained below 8 at.%. The crystallized phase well matched with rhombohedral Ca 2 Hf 7 O 16 . The dielectric films grown on Si(100) substrates possessed effective permittivity values in the range of 12.8-14.2

  17. Al2 O3 Underlayer Prepared by Atomic Layer Deposition for Efficient Perovskite Solar Cells.

    Science.gov (United States)

    Zhang, Jinbao; Hultqvist, Adam; Zhang, Tian; Jiang, Liangcong; Ruan, Changqing; Yang, Li; Cheng, Yibing; Edoff, Marika; Johansson, Erik M J

    2017-10-09

    Perovskite solar cells, as an emergent technology for solar energy conversion, have attracted much attention in the solar cell community by demonstrating impressive enhancement in power conversion efficiencies. However, the high temperature and manually processed TiO 2 underlayer prepared by spray pyrolysis significantly limit the large-scale application and device reproducibility of perovskite solar cells. In this study, lowtemperature atomic layer deposition (ALD) is used to prepare a compact Al 2 O 3 underlayer for perovskite solar cells. The thickness of the Al 2 O 3 layer can be controlled well by adjusting the deposition cycles during the ALD process. An optimal Al 2 O 3 layer effectively blocks electron recombination at the perovskite/fluorine-doped tin oxide interface and sufficiently transports electrons through tunneling. Perovskite solar cells fabricated with an Al 2 O 3 layer demonstrated a highest efficiency of 16.2 % for the sample with 50 ALD cycles (ca. 5 nm), which is a significant improvement over underlayer-free PSCs, which have a maximum efficiency of 11.0 %. Detailed characterization confirms that the thickness of the Al 2 O 3 underlayer significantly influences the charge transfer resistance and electron recombination processes in the devices. Furthermore, this work shows the feasibility of using a high band-gap semiconductor such as Al 2 O 3 as the underlayer in perovskite solar cells and opens up pathways to use ALD Al 2 O 3 underlayers for flexible solar cells. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Tribological Properties of Nanometric Atomic Layer Depositions Applied on AISI 420 Stainless Steel

    Directory of Open Access Journals (Sweden)

    E. Marin

    2013-09-01

    Full Text Available Atomic Layer Deposition ( ALD is a modern technique that Allows to deposit nanometric, conformal coatings on almost any kind of substrates, from plastics to ceramic, metals or even composites. ALD coatings are not dependent on the morphology of the substrate and are only regulated by the composition of the precursors, the chamber temperature and the number of cycles. In this work, mono- and bi -layer nanometric, protective low-temperature ALD Coatings, based on Al2O3 and TiO2 were applied on AISI 420 Stainless Steel in orderto enhance its relatively low corrosion resistance in chloride containing environments. Tribological testing were also performed on the ALD coated AISI 420 in order to evaluate the wear and scratch resistance of these nanometric layers and thus evaluate their durability. Scratch tests were performed using a standard Rockwell C indenter, under a variable load condition, in order to evaluate the critical loading condition for each coating. Wear testing were performed using a stainless steel counterpart, in ball-on-discconfiguration, in order to measure the friction coefficient and wear to confront the resistance. All scratch tests scars and wear tracks were then observed by means of Scanning Electron Microscopy (SEM in order to understand the wear mechanisms that occurred on the sample surfaces. Corrosion testing, performed under immersion in 0.2 M NaCl solutions, clearly showed that the ALD coatings have a strong effect in protecting the Stainless Steel Substrate against corrosion, reducing the corrosion current density by two orders of magnitude.Tribological The preliminary results showed that ALD depositions obtained at low Temperatures have a brittle behavior caused by the amorphous nature of their structure, and thus undergo delamination phenomena during Scratch Testing at relatively low applied loads. During ball-on-disc testing, the coatings were removed from the substrate, in particular for monolayer ALD configurations

  19. Lipid Bilayer Membrane in a Silicon Based Micron Sized Cavity Accessed by Atomic Force Microscopy and Electrochemical Impedance Spectroscopy.

    Science.gov (United States)

    Khan, Muhammad Shuja; Dosoky, Noura Sayed; Patel, Darayas; Weimer, Jeffrey; Williams, John Dalton

    2017-07-05

    Supported lipid bilayers (SLBs) are widely used in biophysical research to probe the functionality of biological membranes and to provide diagnoses in high throughput drug screening. Formation of SLBs at below phase transition temperature ( Tm ) has applications in nano-medicine research where low temperature profiles are required. Herein, we report the successful production of SLBs at above-as well as below-the Tm of the lipids in an anisotropically etched, silicon-based micro-cavity. The Si-based cavity walls exhibit controlled temperature which assist in the quick and stable formation of lipid bilayer membranes. Fusion of large unilamellar vesicles was monitored in real time in an aqueous environment inside the Si cavity using atomic force microscopy (AFM), and the lateral organization of the lipid molecules was characterized until the formation of the SLBs. The stability of SLBs produced was also characterized by recording the electrical resistance and the capacitance using electrochemical impedance spectroscopy (EIS). Analysis was done in the frequency regime of 10 -2 -10⁵ Hz at a signal voltage of 100 mV and giga-ohm sealed impedance was obtained continuously over four days. Finally, the cantilever tip in AFM was utilized to estimate the bilayer thickness and to calculate the rupture force at the interface of the tip and the SLB. We anticipate that a silicon-based, micron-sized cavity has the potential to produce highly-stable SLBs below their Tm . The membranes inside the Si cavity could last for several days and allow robust characterization using AFM or EIS. This could be an excellent platform for nanomedicine experiments that require low operating temperatures.

  20. Alkali-resistant low-temperature atomic-layer-deposited oxides for optical fiber sensor overlays

    Science.gov (United States)

    Kosiel, K.; Dominik, M.; Ściślewska, I.; Kalisz, M.; Guziewicz, M.; Gołaszewska, K.; Niedziółka-Jonsson, J.; Bock, W. J.; Śmietana, M.

    2018-04-01

    This paper presents an investigation of properties of selected metallic oxides deposited at a low temperature (100 °C) by atomic layer deposition (ALD) technique, relating to their applicability as thin overlays for optical fiber sensors resistant in alkaline environments. Hafnium oxide (Hf x O y with y/x approx. 2.70), tantalum oxide (Ta x O y with y/x approx. 2.75) and zirconium oxide (Zr x O y with y/x approx. 2.07), which deposition was based, respectively, on tetrakis(ethylmethyl)hafnium, tantalum pentachloride and tetrakis(ethylmethyl)zirconium with deionized water, were tested as thin layers on planar Si (100) and glass substrates. Growth per cycle (GPC) in the ALD processes was 0.133-0.150 nm/cycle. Run-to-run GPC reproducibility of the ALD processes was best for Hf x O y (0.145 ± 0.001 nm/cycle) and the poorest for Ta x O y (0.133 ± 0.003 nm/cycle). Refractive indices n of the layers were 2.00-2.10 (at the wavelength λ = 632 nm), with negligible k value (at λ for 240-930 nm). The oxides examined by x-ray diffractometry proved to be amorphous, with only small addition of crystalline phases for the Zr x O y . The surfaces of the oxides had grainy but smooth topographies with root-mean square roughness ˜0.5 nm (at 10 × 10 μm2 area) according to atomic force microscopy. Ellipsometric measurements, by contrast, suggest rougher surfaces for the Zr x O y layers. The surfaces were also slightly rougher on the glass-based samples than on the Si-based ones. Nanohardness and Young modules were 4.90-8.64 GPa and 83.7-104.4 GPa, respectively. The tests of scratch resistance revealed better tribological properties for the Hf x O y and the Ta x O y than for the Zr x O y . The surfaces were hydrophilic, with wetting angles of 52.5°-62.9°. The planar oxides on Si, being resistive even to concentrated alkali (pH 14), proved to be significantly more alkali-resistive than Al2O3. The Ta x O y overlay was deposited on long-period grating sensor induced in optical

  1. Quantum size effects in TiO2 thin films grown by atomic layer deposition

    Directory of Open Access Journals (Sweden)

    Massimo Tallarida

    2014-01-01

    Full Text Available We study the atomic layer deposition of TiO2 by means of X-ray absorption spectroscopy. The Ti precursor, titanium isopropoxide, was used in combination with H2O on Si/SiO2 substrates that were heated at 200 °C. The low growth rate (0.15 Å/cycle and the in situ characterization permitted to follow changes in the electronic structure of TiO2 in the sub-nanometer range, which are influenced by quantum size effects. The modified electronic properties may play an important role in charge carrier transport and separation, and increase the efficiency of energy conversion systems.

  2. Using atomic layer deposited tungsten to increase thermal conductivity of a packed bed

    Energy Technology Data Exchange (ETDEWEB)

    Van Norman, Staci A.; Falconer, John L.; Weimer, Alan W., E-mail: alan.weimer@colorado.edu [Department of Chemical and Biological Engineering, University of Colorado, UCB 596, Boulder, Colorado 80309-0596 (United States); Tringe, Joseph W.; Sain, John D. [Lawrence Livermore National Laboratory, 7000 East Ave, Livermore, California 94550 (United States); Yang, Ronggui [Department of Mechanical Engineering, University of Colorado, UCB 427, Boulder, Colorado 80309-0427 (United States)

    2015-04-13

    This study investigated the effective thermal conductivity (k{sub eff}) of packed-beds that contained porous particles with nanoscale tungsten (W) films of different thicknesses formed by atomic layer deposition (ALD). A continuous film on the particles is vital towards increasing k{sub eff} of the packed beds. For example, the k{sub eff} of an alumina packed bed was increased by three times after an ∼8-nm continuous W film with 20 cycles of W ALD, whereas k{sub eff} was decreased on a polymer packed bed with discontinuous, evenly dispersed W-islands due to nanoparticle scattering of phonons. For catalysts, understanding the thermal properties of these packed beds is essential for developing thermally conductive supports as alternatives to structured supports.

  3. Surface diffusion coefficient of Au atoms on single layer graphene grown on Cu

    Energy Technology Data Exchange (ETDEWEB)

    Ruffino, F., E-mail: francesco.ruffino@ct.infn.it; Cacciato, G.; Grimaldi, M. G. [Dipartimento di Fisica ed Astronomia-Universitá di Catania, via S. Sofia 64, 95123 Catania, Italy and MATIS IMM-CNR, via S. Sofia 64, 95123 Catania (Italy)

    2014-02-28

    A 5 nm thick Au film was deposited on single layer graphene sheets grown on Cu. By thermal processes, the dewetting phenomenon of the Au film on the graphene was induced so to form Au nanoparticles. The mean radius, surface-to-surface distance, and surface density evolution of the nanoparticles on the graphene sheets as a function of the annealing temperature were quantified by scanning electron microscopy analyses. These quantitative data were analyzed within the classical mean-field nucleation theory so to obtain the temperature-dependent Au atoms surface diffusion coefficient on graphene: D{sub S}(T)=[(8.2±0.6)×10{sup −8}]exp[−(0.31±0.02(eV)/(at) )/kT] cm{sup 2}/s.

  4. Monolithic Laser Scribed Graphene Scaffold with Atomic Layer Deposited Platinum for Hydrogen Evolution Reaction

    KAUST Repository

    Nayak, Pranati; Jiang, Qiu; Kurra, Narendra; Buttner, Ulrich; Wang, Xianbin; Alshareef, Husam N.

    2017-01-01

    The use of three-dimensional (3D) electrode architectures as scaffolds for conformal deposition of catalysts is an emerging research area with significant potential for electrocatalytic applications. In this study, we report the fabrication of monolithic, self-standing, 3D graphitic carbon scaffold with conformally deposited Pt by atomic layer deposition (ALD) as a hydrogen evolution reaction catalyst. Laser scribing is employed to transform polyimide into 3D porous graphitic carbon, which possesses good electronic conductivity and numerous edge plane sites. This laser scribed graphene (LSG) architecture makes it possible to fabricate monolithic electrocatalyst support without any binders or conductive additives. The synergistic effect between ALD of Pt on 3D network of LSG provides an avenue for minimal yet effective Pt usage, leading to an enhanced HER activity. This strategy establish a general approach for inexpensive and large scale HER device fabrication with minimum catalyst cost.

  5. Thin films of In2O3 by atomic layer deposition using In(acac)3

    International Nuclear Information System (INIS)

    Nilsen, O.; Balasundaraprabhu, R.; Monakhov, E.V.; Muthukumarasamy, N.; Fjellvag, H.; Svensson, B.G.

    2009-01-01

    Thin films of indium oxide have been deposited using the atomic layer deposition (ALD) technique using In(acac) 3 (acac = acetylacetonate, pentane-2,4-dione) and either H 2 O or O 3 as precursors. Successful growth using In(acac) 3 is contradictory to what has been reported previously in the literature [J.W. Elam, A.B.F. Martinson, M.J. Pellin, J.T. Hupp, Chem. Mater. 18 (2006) 3571.]. Investigation of the dependence of temperature on the deposition shows windows where the growth rates are relatively unaffected by temperature in the ranges 165-200 o C for In(acac) 3 and H 2 O, 165-225 o C for In(acac) 3 and O 3 . The growth rates obtained are of the order 20 pm/cycle for In(acac) 3 and H 2 O, 12 pm/cycle for In(acac) 3 .

  6. Thermal stability of atomic layer deposition Al2O3 film on HgCdTe

    Science.gov (United States)

    Zhang, P.; Sun, C. H.; Zhang, Y.; Chen, X.; He, K.; Chen, Y. Y.; Ye, Z. H.

    2015-06-01

    Thermal stability of Atomic Layer Deposition Al2O3 film on HgCdTe was investigated by Al2O3 film post-deposition annealing treatment and Metal-Insulator-Semiconductor device low-temperature baking treatment. The effectiveness of Al2O3 film was evaluated by measuring the minority carrier lifetime and capacitance versus voltage characteristics. After annealing treatment, the minority carrier lifetime of the HgCdTe sample presented a slight decrease. Furthermore, the fixed charge density and the slow charge density decreased significantly in the annealed MIS device. After baking treatment, the fixed charge density and the slow charge density of the unannealed and annealed MIS devices decreased and increased, respectively.

  7. Femtosecond laser patterning, synthesis, defect formation, and structural modification of atomic layered materials

    International Nuclear Information System (INIS)

    Yoo, Jae-Hyuck; Kim, Eunpa; Hwang, David J.

    2016-01-01

    This article summarizes recent research on laser-based processing of twodimensional (2D) atomic layered materials, including graphene and transition metal dichalcogenides (TMDCs). Ultrafast lasers offer unique processing routes that take advantage of distinct interaction mechanisms with 2D materials to enable extremely localized energy deposition. Experiments have shown that ablative direct patterning of graphene by ultrafast lasers can achieve resolutions of tens of nanometers, as well as single-step pattern transfer. Ultrafast lasers also induce non-thermal excitation mechanisms that are useful for the thinning of TMDCs to tune the 2D material bandgap. Laser-assisted site-specific doping was recently demonstrated where ultrafast laser radiation under ambient air environment could be used for the direct writing of high-quality graphene patterns on insulating substrates. This article concludes with an outlook towards developing further advanced laser processing with scalability, in situ monitoring strategies and potential applications.

  8. Enhancing the platinum atomic layer deposition infiltration depth inside anodic alumina nanoporous membrane

    Energy Technology Data Exchange (ETDEWEB)

    Vaish, Amit, E-mail: anv@udel.edu; Krueger, Susan; Dimitriou, Michael; Majkrzak, Charles [National Institute of Standards and Technology (NIST) Center for Neutron Research, Gaithersburg, MD 20899-8313 (United States); Vanderah, David J. [Institute for Bioscience and Biotechnology Research, NIST, Rockville, Maryland 20850 (United States); Chen, Lei, E-mail: lei.chen@nist.gov [NIST Center for Nanoscale Science and Technology, Gaithersburg, Maryland 20899-8313 (United States); Gawrisch, Klaus [Laboratory of Membrane Biochemistry and Biophysics, National Institute on Alcohol Abuse and Alcoholism, National Institutes of Health, Bethesda, Maryland 20892 (United States)

    2015-01-15

    Nanoporous platinum membranes can be straightforwardly fabricated by forming a Pt coating inside the nanopores of anodic alumina membranes (AAO) using atomic layer deposition (ALD). However, the high-aspect-ratio of AAO makes Pt ALD very challenging. By tuning the process deposition temperature and precursor exposure time, enhanced infiltration depth along with conformal coating was achieved for Pt ALD inside the AAO templates. Cross-sectional scanning electron microscopy/energy dispersive x-ray spectroscopy and small angle neutron scattering were employed to analyze the Pt coverage and thickness inside the AAO nanopores. Additionally, one application of platinum-coated membrane was demonstrated by creating a high-density protein-functionalized interface.

  9. Low-temperature atomic layer deposition of MoS{sub 2} films

    Energy Technology Data Exchange (ETDEWEB)

    Jurca, Titel; Wang, Binghao; Tan, Jeffrey M.; Lohr, Tracy L.; Marks, Tobin J. [Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL (United States); Moody, Michael J.; Henning, Alex; Emery, Jonathan D.; Lauhon, Lincoln J. [Department of Materials Science and Engineering, and the Materials Research Center, Northwestern University, Evanston, IL (United States)

    2017-04-24

    Wet chemical screening reveals the very high reactivity of Mo(NMe{sub 2}){sub 4} with H{sub 2}S for the low-temperature synthesis of MoS{sub 2}. This observation motivated an investigation of Mo(NMe{sub 2}){sub 4} as a volatile precursor for the atomic layer deposition (ALD) of MoS{sub 2} thin films. Herein we report that Mo(NMe{sub 2}){sub 4} enables MoS{sub 2} film growth at record low temperatures - as low as 60 C. The as-deposited films are amorphous but can be readily crystallized by annealing. Importantly, the low ALD growth temperature is compatible with photolithographic and lift-off patterning for the straightforward fabrication of diverse device structures. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Stacking and electric field effects in atomically thin layers of GaN

    International Nuclear Information System (INIS)

    Xu, Dongwei; He, Haiying; Pandey, Ravindra; Karna, Shashi P

    2013-01-01

    Atomically thin layers of nitrides are a subject of interest due to their novel applications. In this paper, we focus on GaN multilayers, investigating their stability and the effects of stacking and electric fields on their electronic properties in the framework of density functional theory. Both bilayers and trilayers prefer a planar configuration rather than a buckled bulk-like configuration. The application of an external perpendicular electric field induces distinct stacking-dependent features in the electronic properties of nitride multilayers: the band gap of a monolayer does not change whereas that of a trilayer is significantly reduced. Such a stacking-dependent tunability of the band gap in the presence of an applied field suggests that multilayer GaN is a good candidate material for next generation devices at the nanoscale. (paper)

  11. Designing high performance precursors for atomic layer deposition of silicon oxide

    Energy Technology Data Exchange (ETDEWEB)

    Mallikarjunan, Anupama, E-mail: mallika@airproducts.com; Chandra, Haripin; Xiao, Manchao; Lei, Xinjian; Pearlstein, Ronald M.; Bowen, Heather R.; O' Neill, Mark L. [Air Products and Chemicals, Inc., 1969 Palomar Oaks Way, Carlsbad, California 92011 (United States); Derecskei-Kovacs, Agnes [Air Products and Chemicals, Inc., 7201 Hamilton Blvd., Allentown, Pennsylvania 18195 (United States); Han, Bing [Air Products and Chemicals, Inc., 2 Dongsanhuan North Road, Chaoyang District, Beijing 100027 (China)

    2015-01-15

    Conformal and continuous silicon oxide films produced by atomic layer deposition (ALD) are enabling novel processing schemes and integrated device structures. The increasing drive toward lower temperature processing requires new precursors with even higher reactivity. The aminosilane family of precursors has advantages due to their reactive nature and relative ease of use. In this paper, the authors present the experimental results that reveal the uniqueness of the monoaminosilane structure [(R{sub 2}N)SiH{sub 3}] in providing ultralow temperature silicon oxide depositions. Disubstituted aminosilanes with primary amines such as in bis(t-butylamino)silane and with secondary amines such as in bis(diethylamino)silane were compared with a representative monoaminosilane: di-sec-butylaminosilane (DSBAS). DSBAS showed the highest growth per cycle in both thermal and plasma enhanced ALD. These findings show the importance of the arrangement of the precursor's organic groups in an ALD silicon oxide process.

  12. Monolithic Laser Scribed Graphene Scaffold with Atomic Layer Deposited Platinum for Hydrogen Evolution Reaction

    KAUST Repository

    Nayak, Pranati

    2017-09-01

    The use of three-dimensional (3D) electrode architectures as scaffolds for conformal deposition of catalysts is an emerging research area with significant potential for electrocatalytic applications. In this study, we report the fabrication of monolithic, self-standing, 3D graphitic carbon scaffold with conformally deposited Pt by atomic layer deposition (ALD) as a hydrogen evolution reaction catalyst. Laser scribing is employed to transform polyimide into 3D porous graphitic carbon, which possesses good electronic conductivity and numerous edge plane sites. This laser scribed graphene (LSG) architecture makes it possible to fabricate monolithic electrocatalyst support without any binders or conductive additives. The synergistic effect between ALD of Pt on 3D network of LSG provides an avenue for minimal yet effective Pt usage, leading to an enhanced HER activity. This strategy establish a general approach for inexpensive and large scale HER device fabrication with minimum catalyst cost.

  13. Control of thermal deformation in dielectric mirrors using mechanical design and atomic layer deposition.

    Science.gov (United States)

    Gabriel, Nicholas T; Kim, Sangho S; Talghader, Joseph J

    2009-07-01

    A mechanical design technique for optical coatings that simultaneously controls thermal deformation and optical reflectivity is reported. The method requires measurement of the refractive index and thermal stress of single films prior to the design. Atomic layer deposition was used for deposition because of the high repeatability of the film constants. An Al2O3/HfO2 distributed Bragg reflector was deposited with a predicted peak reflectivity of 87.9% at 542.4 nm and predicted edge deformation of -360 nm/K on a 10 cm silicon substrate. The measured peak reflectivity was 85.7% at 541.7 nm with an edge deformation of -346 nm/K.

  14. An atomic-force-microscopy study of the structure of surface layers of intact fibroblasts

    Science.gov (United States)

    Khalisov, M. M.; Ankudinov, A. V.; Penniyaynen, V. A.; Nyapshaev, I. A.; Kipenko, A. V.; Timoshchuk, K. I.; Podzorova, S. A.; Krylov, B. V.

    2017-02-01

    Intact embryonic fibroblasts on a collagen-treated substrate have been studied by atomic-force microscopy (AFM) using probes of two types: (i) standard probes with tip curvature radii of 2-10 nm and (ii) special probes with a calibrated 325-nm SiO2 ball radius at the tip apex. It is established that, irrespective of probe type, the average maximum fibroblast height is on a level of 1.7 μm and the average stiffness of the probe-cell contact amounts to 16.5 mN/m. The obtained AFM data reveal a peculiarity of the fibroblast structure, whereby its external layers move as a rigid shell relative to the interior and can be pressed inside to a depth dependent on the load only.

  15. Atomic layer deposition of HfO2 on graphene through controlled ion beam treatment

    International Nuclear Information System (INIS)

    Kim, Ki Seok; Oh, Il-Kwon; Jung, Hanearl; Kim, Hyungjun; Yeom, Geun Young; Kim, Kyong Nam

    2016-01-01

    The polymer residue generated during the graphene transfer process to the substrate tends to cause problems (e.g., a decrease in electron mobility, unwanted doping, and non-uniform deposition of the dielectric material). In this study, by using a controllable low-energy Ar + ion beam, we cleaned the polymer residue without damaging the graphene network. HfO 2 grown by atomic layer deposition on graphene cleaned using an Ar + ion beam showed a dense uniform structure, whereas that grown on the transferred graphene (before Ar + ion cleaning) showed a non-uniform structure. A graphene–HfO 2 –metal capacitor fabricated by growing 20-nm thick HfO 2 on graphene exhibited a very low leakage current (<10 −11 A/cm 2 ) for Ar + ion-cleaned graphene, whereas a similar capacitor grown using the transferred graphene showed high leakage current.

  16. Graphene Coatings: Probing the Limits of the One Atom Thick Protection Layer

    DEFF Research Database (Denmark)

    Nilsson, Louis; Andersen, Mie; Balog, Richard

    2012-01-01

    The limitations of graphene as an effective corrosion-inhibiting coating on metal surfaces, here exemplified by the hex-reconstructed Pt(100) surface, are probed by scanning tunneling microscopy measurements and density functional theory calculations. While exposure of small molecules directly onto...... against CO is observed at CO pressures below 106 mbar. However, at higher pressures CO is observed to intercalate under the graphene coating layer, thus lifting the reconstruction. The limitations of the coating effect are further tested by exposure to hot atomic hydrogen. While the coating can withstand...... these extreme conditions for a limited amount of time, after substantial exposure, the Pt(100) reconstruction is lifted. Annealing experiments and density functional theory calculations demonstrate that the basal plane of the graphene stays intact and point to a graphene-mediated mechanism for the H...

  17. Dynamic Modeling for the Design and Cyclic Operation of an Atomic Layer Deposition (ALD Reactor

    Directory of Open Access Journals (Sweden)

    Curtisha D. Travis

    2013-08-01

    Full Text Available A laboratory-scale atomic layer deposition (ALD reactor system model is derived for alumina deposition using trimethylaluminum and water as precursors. Model components describing the precursor thermophysical properties, reactor-scale gas-phase dynamics and surface reaction kinetics derived from absolute reaction rate theory are integrated to simulate the complete reactor system. Limit-cycle solutions defining continuous cyclic ALD reactor operation are computed with a fixed point algorithm based on collocation discretization in time, resulting in an unambiguous definition of film growth-per-cycle (gpc. A key finding of this study is that unintended chemical vapor deposition conditions can mask regions of operation that would otherwise correspond to ideal saturating ALD operation. The use of the simulator for assisting in process design decisions is presented.

  18. Pulsed Plasma with Synchronous Boundary Voltage for Rapid Atomic Layer Etching

    Energy Technology Data Exchange (ETDEWEB)

    Economou, Demetre J.; Donnelly, Vincent M.

    2014-05-13

    Atomic Layer ETching (ALET) of a solid with monolayer precision is a critical requirement for advancing nanoscience and nanotechnology. Current plasma etching techniques do not have the level of control or damage-free nature that is needed for patterning delicate sub-20 nm structures. In addition, conventional ALET, based on pulsed gases with long reactant adsorption and purging steps, is very slow. In this work, novel pulsed plasma methods with synchronous substrate and/or “boundary electrode” bias were developed for highly selective, rapid ALET. Pulsed plasma and tailored bias voltage waveforms provided controlled ion energy and narrow energy spread, which are critical for highly selective and damage-free etching. The broad goal of the project was to investigate the plasma science and engineering that will lead to rapid ALET with monolayer precision. A combined experimental-simulation study was employed to achieve this goal.

  19. Atomic-layer-deposited WNxCy thin films as diffusion barrier for copper metallization

    Science.gov (United States)

    Kim, Soo-Hyun; Oh, Su Suk; Kim, Ki-Bum; Kang, Dae-Hwan; Li, Wei-Min; Haukka, Suvi; Tuominen, Marko

    2003-06-01

    The properties of WNxCy films deposited by atomic layer deposition (ALD) using WF6, NH3, and triethyl boron as source gases were characterized as a diffusion barrier for copper metallization. It is noted that the as-deposited film shows an extremely low resistivity of about 350 μΩ cm with a film density of 15.37 g/cm3. The film composition measured from Rutherford backscattering spectrometry shows W, C, and N of ˜48, 32, and 20 at. %, respectively. Transmission electron microscopy analyses show that the as-deposited film is composed of face-centered-cubic phase with a lattice parameter similar to both β-WC1-x and β-W2N with an equiaxed microstructure. The barrier property of this ALD-WNxCy film at a nominal thickness of 12 nm deposited between Cu and Si fails only after annealing at 700 °C for 30 min.

  20. Building a Better Capacitor with Thin-Film Atomic Layer Deposition Processing

    Energy Technology Data Exchange (ETDEWEB)

    Pike, Christopher [North Seattle College, WA (United States)

    2015-08-28

    The goal of this research is to determine procedures for creating ultra-high capacity supercapacitors by using nanofabrication techniques and high k-value dielectrics. One way to potentially solve the problem of climate change is to switch the source of energy to a source that doesn’t release many tons of greenhouse gases, gases which cause global warming, into the Earth’s atmosphere. These trap in more heat from the Sun’s solar energy and cause global temperatures to rise. Atomic layer deposition will be used to create a uniform thin-film of dielectric to greatly enhance the abilities of our capacitors and will build them on the nanoscale.

  1. Controlled dielectrophoretic nanowire self-assembly using atomic layer deposition and suspended microfabricated electrodes

    International Nuclear Information System (INIS)

    Baca, Alicia I; Brown, Joseph J; Bright, Victor M; Bertness, Kris A

    2012-01-01

    Effects of design and materials on the dielectrophoretic self-assembly of individual gallium nitride nanowires (GaN NWs) onto microfabricated electrodes have been experimentally investigated. The use of TiO 2 surface coating generated by atomic layer deposition (ALD) improves dielectrophoretic assembly yield of individual GaN nanowires on microfabricated structures by as much as 67%. With a titanium dioxide coating, individual nanowires were placed across suspended electrode pairs in 46% of tests (147 out of 320 total), versus 28% of tests (88 out of 320 total tests) that used uncoated GaN NWs. An additional result from these tests was that suspending the electrodes 2.75 μm above the substrate corresponded with up to 15.8% improvement in overall assembly yield over that of electrodes fabricated directly on the substrate. (paper)

  2. Isolating the effect of pore size distribution on electrochemical double-layer capacitance using activated fluid coke

    Science.gov (United States)

    Zuliani, Jocelyn E.; Tong, Shitang; Kirk, Donald W.; Jia, Charles Q.

    2015-12-01

    Electrochemical double-layer capacitors (EDLCs) use physical ion adsorption in the capacitive electrical double layer of high specific surface area (SSA) materials to store electrical energy. Previous work shows that the SSA-normalized capacitance increases when pore diameters are less than 1 nm. However, there still remains uncertainty about the charge storage mechanism since the enhanced SSA-normalized capacitance is not observed in all microporous materials. In previous studies, the total specific surface area and the chemical composition of the electrode materials were not controlled. The current work is the first reported study that systematically compares the performance of activated carbon prepared from the same raw material, with similar chemical composition and specific surface area, but different pore size distributions. Preparing samples with similar SSAs, but different pores sizes is not straightforward since increasing pore diameters results in decreasing the SSA. This study observes that the microporous activated carbon has a higher SSA-normalized capacitance, 14.1 μF cm-2, compared to the mesoporous material, 12.4 μF cm-2. However, this enhanced SSA-normalized capacitance is only observed above a threshold operating voltage. Therefore, it can be concluded that a minimum applied voltage is required to induce ion adsorption in these sub-nanometer micropores, which increases the capacitance.

  3. Angular behavior of the Berreman effect investigated in uniform Al2O3 layers formed by atomic layer deposition.

    Science.gov (United States)

    Scarel, Giovanna; Na, Jeong-Seok; Parsons, Gregory N

    2010-04-21

    Experimental transmission absorbance infrared spectra of γ-Al(2)O(3) showing evidence of the angular dependence of the peaks of surface modes appearing next to the longitudinal optical phonon frequency ω(LO) (the Berreman effect) are collected from heat-treated thin oxide films deposited with thickness uniformity on Si(100) using atomic layer deposition. The peak area of the most intense surface longitudinal optical mode is plotted versus the infrared beam incidence angle θ(0). The experimental points closely follow the sin(4)(θ(0)) function in a broad thickness range. The best match occurs at a critical thickness, where a linear relationship exists between the surface longitudinal optical mode intensity and film thickness. Simulations suggest that below the critical thickness the sin(4)(θ(0)) behavior can be explained by refraction phenomena at the air/thin film and thin film/substrate interfaces. Above the critical thickness, the experimentally obtained result is derived from field boundary conditions at the air/thin film interface. The sin(4)(θ(0)) functional trend breaks down far above the critical thickness. This picture indicates that infrared radiation has a limited penetration depth into the oxide film, similarly to electromagnetic waves in conductors. Consequently, surface longitudinal optical modes are viewed as bulk phonons excited down to the penetration depth of the infrared beam. Comparison with simulated data suggests that the infrared radiation absorptance of surface longitudinal optical modes tends to approach the sin(2)(θ(0)) trend. Reflection phenomena are considered to be the origin of the deviation from the sin(4)(θ(0)) trend related to refraction.

  4. Phosphorus atomic layer doping in SiGe using reduced pressure chemical vapor deposition

    International Nuclear Information System (INIS)

    Yamamoto, Yuji; Heinemann, Bernd; Murota, Junichi; Tillack, Bernd

    2014-01-01

    Phosphorus (P) atomic layer doping in SiGe is investigated at temperatures between 100 °C to 600 °C using a single wafer reduced pressure chemical vapor deposition system. SiGe(100) surface is exposed to PH 3 at different PH 3 partial pressures by interrupting SiGe growth. The impact of the SiGe buffer/cap growth condition (total pressure/SiGe deposition precursors) on P adsorption, incorporation, and segregation are investigated. In the case of SiH 4 -GeH 4 -H 2 gas system, steeper P spikes due to lower segregation are observed by SiGe cap deposition at atmospheric (ATM) pressure compared with reduced pressure (RP). The steepness of P spike of ∼ 5.7 nm/dec is obtained for ATM pressure without reducing deposition temperature. This result may be due to the shift of equilibrium of P adsorption/desorption to desorption direction by higher H 2 pressure. Using Si 2 H 6 -GeH 4 -H 2 gas system for SiGe cap deposition in RP, lowering the SiGe growth temperature is possible, resulting in higher P incorporation and steeper P profile due to reduced desorption and segregation. In the case of Si 2 H 6 -GeH 4 -H 2 gas system, the P dose could be simulated assuming a Langmuir-type kinetics model. Incorporated P shows high electrical activity, indicating P is adsorbed mostly in lattice position. - Highlights: • Phosphorus (P) atomic layer doping in SiGe (100) is investigated using CVD. • P adsorption is suppressed by the hydrogen termination of Ge surface. • By SiGe cap deposition at atmospheric pressure, P segregation was suppressed. • By using Si 2 H 6 -based SiGe cap, P segregation was also suppressed. • The P adsorption process is self-limited and follows Langmuir-type kinetics model

  5. The effect of substrate temperature on atomic layer deposited zinc tin oxide

    Energy Technology Data Exchange (ETDEWEB)

    Lindahl, Johan, E-mail: johan.lindahl@angstrom.uu.se; Hägglund, Carl, E-mail: carl.hagglund@angstrom.uu.se; Wätjen, J. Timo, E-mail: timo.watjen@angstrom.uu.se; Edoff, Marika, E-mail: marika.edoff@angstrom.uu.se; Törndahl, Tobias, E-mail: tobias.torndahl@angstrom.uu.se

    2015-07-01

    Zinc tin oxide (ZTO) thin films were deposited on glass substrates by atomic layer deposition (ALD), and the film properties were investigated for varying deposition temperatures in the range of 90 to 180 °C. It was found that the [Sn]/([Sn] + [Zn]) composition is only slightly temperature dependent, while properties such as growth rate, film density, material structure and band gap are more strongly affected. The growth rate dependence on deposition temperature varies with the relative number of zinc or tin containing precursor pulses and it correlates with the growth rate behavior of pure ZnO and SnO{sub x} ALD. In contrast to the pure ZnO phase, the density of the mixed ZTO films is found to depend on the deposition temperature and it increases linearly with about 1 g/cm{sup 3} in total over the investigated range. Characterization by transmission electron microscopy suggests that zinc rich ZTO films contain small (~ 10 nm) ZnO or ZnO(Sn) crystallites embedded in an amorphous matrix, and that these crystallites increase in size with increasing zinc content and deposition temperature. These crystallites are small enough for quantum confinement effects to reduce the optical band gap of the ZTO films as they grow in size with increasing deposition temperature. - Highlights: • Zinc tin oxide thin films were deposited by atomic layer deposition. • The structure and optical properties were studied at different growth temperatures. • The growth temperature had only a small effect on the composition of the films. • Small ZnO or ZnO(Sn) crystallites were observed by TEM in zinc rich ZTO films. • The growth temperature affects the crystallite size, which influences the band gap.

  6. The effect of substrate temperature on atomic layer deposited zinc tin oxide

    International Nuclear Information System (INIS)

    Lindahl, Johan; Hägglund, Carl; Wätjen, J. Timo; Edoff, Marika; Törndahl, Tobias

    2015-01-01

    Zinc tin oxide (ZTO) thin films were deposited on glass substrates by atomic layer deposition (ALD), and the film properties were investigated for varying deposition temperatures in the range of 90 to 180 °C. It was found that the [Sn]/([Sn] + [Zn]) composition is only slightly temperature dependent, while properties such as growth rate, film density, material structure and band gap are more strongly affected. The growth rate dependence on deposition temperature varies with the relative number of zinc or tin containing precursor pulses and it correlates with the growth rate behavior of pure ZnO and SnO x ALD. In contrast to the pure ZnO phase, the density of the mixed ZTO films is found to depend on the deposition temperature and it increases linearly with about 1 g/cm 3 in total over the investigated range. Characterization by transmission electron microscopy suggests that zinc rich ZTO films contain small (~ 10 nm) ZnO or ZnO(Sn) crystallites embedded in an amorphous matrix, and that these crystallites increase in size with increasing zinc content and deposition temperature. These crystallites are small enough for quantum confinement effects to reduce the optical band gap of the ZTO films as they grow in size with increasing deposition temperature. - Highlights: • Zinc tin oxide thin films were deposited by atomic layer deposition. • The structure and optical properties were studied at different growth temperatures. • The growth temperature had only a small effect on the composition of the films. • Small ZnO or ZnO(Sn) crystallites were observed by TEM in zinc rich ZTO films. • The growth temperature affects the crystallite size, which influences the band gap

  7. Protective coatings of hafnium dioxide by atomic layer deposition for microelectromechanical systems applications

    Energy Technology Data Exchange (ETDEWEB)

    Berdova, Maria, E-mail: maria.berdova@aalto.fi [Aalto University, Department of Materials Science and Engineering, 02150, Espoo (Finland); Wiemer, Claudia; Lamperti, Alessio; Tallarida, Grazia; Cianci, Elena [Laboratorio MDM, IMM CNR, Via C. Olivetti 2, 20864, Agrate Brianza, MB (Italy); Lamagna, Luca; Losa, Stefano; Rossini, Silvia; Somaschini, Roberto; Gioveni, Salvatore [STMicroelectronics, Via C. Olivetti 2, 20864, Agrate Brianza, MB (Italy); Fanciulli, Marco [Laboratorio MDM, IMM CNR, Via C. Olivetti 2, 20864, Agrate Brianza, MB (Italy); Università degli studi di Milano Bicocca, Dipartimento di Scienza dei Materiali, 20126, Milano (Italy); Franssila, Sami, E-mail: sami.franssila@aalto.fi [Aalto University, Department of Materials Science and Engineering, 02150, Espoo (Finland)

    2016-04-15

    Graphical abstract: - Highlights: • Atomic layer deposition of HfO{sub 2} from (CpMe){sub 2}Hf(OMe)Me or Hf(NMeEt){sub 4} and ozone for potential applications in microelectromechanical systems. • ALD HfO{sub 2} protects aluminum substrates from degradation in moist environment and at the same time retains good reflectance properties of the underlying material. • The resistance of hafnium dioxide to moist environment is independent of chosen precursors. - Abstract: This work presents the investigation of HfO{sub 2} deposited by atomic layer deposition (ALD) from either HfD-CO4 or TEMAHf and ozone for microelectromechanical systems (MEMS) applications, in particular, for environmental protection of aluminum micromirrors. This work shows that HfO{sub 2} films successfully protect aluminum in moist environment and at the same time retain good reflectance properties of underlying material. In our experimental work, the chemical composition, crystal structure, electronic density and roughness of HfO{sub 2} films remained the same after one week of humidity treatment (relative humidity of 85%, 85 °C). The reflectance properties underwent only minor changes. The observed shift in reflectance was only from 80–90% to 76–85% in 400–800 nm spectral range when coated with ALD HfO{sub 2} films grown with Hf(NMeEt){sub 4} and no shift (remained in the range of 68–83%) for films grown from (CpMe){sub 2}Hf(OMe)Me.

  8. Self-limiting atomic layer deposition of conformal nanostructured silver films

    International Nuclear Information System (INIS)

    Golrokhi, Zahra; Chalker, Sophia; Sutcliffe, Christopher J.; Potter, Richard J.

    2016-01-01

    Graphical abstract: - Highlights: • We grow metallic silver by direct liquid injection thermal atomic layer deposition. • Highly conformal silver nanoparticle coatings on high aspect ratio surfaces. • An ALD temperature growth window between 123 and 128 °C is established. • ALD cycles provides sub nanometre control of silver growth. • Catalytic dehydrogenation ALD mechanism has been elucidated by in-situ QCM. - Abstract: The controlled deposition of ultra-thin conformal silver nanoparticle films is of interest for applications including anti-microbial surfaces, plasmonics, catalysts and sensors. While numerous techniques can produce silver nanoparticles, few are able to produce highly conformal coatings on high aspect ratio surfaces, together with sub-nanometre control and scalability. Here we develop a self-limiting atomic layer deposition (ALD) process for the deposition of conformal metallic silver nanoparticle films. The films have been deposited using direct liquid injection ALD with ((hexafluoroacetylacetonato)silver(I)(1,5-cyclooctadiene)) and propan-1-ol. An ALD temperature window between 123 and 128 °C is identified and within this range self-limiting growth is confirmed with a mass deposition rate of ∼17.5 ng/cm"2/cycle. The effects of temperature, precursor dose, co-reactant dose and cycle number on the deposition rate and on the properties of the films have been systematically investigated. Under self-limiting conditions, films are metallic silver with a nano-textured surface topography and nanoparticle size is dependent on the number of ALD cycles. The ALD reaction mechanisms have been elucidated using in-situ quartz crystal microbalance (QCM) measurements, showing chemisorption of the silver precursor, followed by heterogeneous catalytic dehydrogenation of the alcohol to form metallic silver and an aldehyde.

  9. Pt thermal atomic layer deposition for silicon x-ray micropore optics.

    Science.gov (United States)

    Takeuchi, Kazuma; Ezoe, Yuichiro; Ishikawa, Kumi; Numazawa, Masaki; Terada, Masaru; Ishi, Daiki; Fujitani, Maiko; Sowa, Mark J; Ohashi, Takaya; Mitsuda, Kazuhisa

    2018-04-20

    We fabricated a silicon micropore optic using deep reactive ion etching and coated by Pt with atomic layer deposition (ALD). We confirmed that a metal/metal oxide bilayer of Al 2 O 3 ∼10  nm and Pt ∼20  nm was successfully deposited on the micropores whose width and depth are 20 μm and 300 μm, respectively. An increase of surface roughness of sidewalls of the micropores was observed with a transmission electron microscope and an atomic force microscope. X-ray reflectivity with an Al Kα line at 1.49 keV before and after the deposition was measured and compared to ray-tracing simulations. The surface roughness of the sidewalls was estimated to increase from 1.6±0.2  nm rms to 2.2±0.2  nm rms. This result is consistent with the microscope measurements. Post annealing of the Pt-coated optic at 1000°C for 2 h showed a sign of reduced surface roughness and better angular resolution. To reduce the surface roughness, possible methods such as the annealing after deposition and a plasma-enhanced ALD are discussed.

  10. Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition

    International Nuclear Information System (INIS)

    Shih, Huan-Yu; Chen, Miin-Jang; Lin, Ming-Chih; Chen, Liang-Yih

    2015-01-01

    The growth of uniform gallium nitride (GaN) thin films was reported on (100) Si substrate by remote plasma atomic layer deposition (RP-ALD) using triethylgallium (TEG) and NH 3 as the precursors. The self-limiting growth of GaN was manifested by the saturation of the deposition rate with the doses of TEG and NH 3 . The increase in the growth temperature leads to the rise of nitrogen content and improved crystallinity of GaN thin films, from amorphous at a low deposition temperature of 200 °C to polycrystalline hexagonal structures at a high growth temperature of 500 °C. No melting-back etching was observed at the GaN/Si interface. The excellent uniformity and almost atomic flat surface of the GaN thin films also infer the surface control mode of the GaN thin films grown by the RP-ALD technique. The GaN thin films grown by RP-ALD will be further applied in the light-emitting diodes and high electron mobility transistors on (100) Si substrate. (paper)

  11. Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides

    Science.gov (United States)

    Yuqing, XIONG; Hengjiao, GAO; Ni, REN; Zhongwei, LIU

    2018-03-01

    Copper thin films were deposited by plasma-enhanced atomic layer deposition at low temperature, using copper(I)-N,N‧-di-sec-butylacetamidinate as a precursor and hydrogen as a reductive gas. The influence of temperature, plasma power, mode of plasma, and pulse time, on the deposition rate of copper thin film, the purity of the film and the step coverage were studied. The feasibility of copper film deposition on the inner wall of a carbon fibre reinforced plastic waveguide with high aspect ratio was also studied. The morphology and composition of the thin film were studied by atomic force microscopy and x-ray photoelectron spectroscopy, respectively. The square resistance of the thin film was also tested by a four-probe technique. On the basis of on-line diagnosis, a growth mechanism of copper thin film was put forward, and it was considered that surface functional group played an important role in the process of nucleation and in determining the properties of thin films. A high density of plasma and high free-radical content were helpful for the deposition of copper thin films.

  12. Atomic diffusion induced degradation in bimetallic layer coated cemented tungsten carbide

    International Nuclear Information System (INIS)

    Peng, Zirong; Rohwerder, Michael; Choi, Pyuck-Pa; Gault, Baptiste; Meiners, Thorsten; Friedrichs, Marcel; Kreilkamp, Holger; Klocke, Fritz; Raabe, Dierk

    2017-01-01

    Highlights: • We study the temporal degradation of PtIr/Cr/WC and PtIr/Ni/WC systems. • Short cut diffusion, segregation, oxidation and interdiffusion reactions occurred. • Outward diffusion of Cr (Ni) via PtIr grain boundaries triggered the degradation. • The microstructure of the PtIr layer controlled the systems stability. • We propose an atomic diffusion induced degradation mechanism. - Abstract: We investigated the temporal degradation of glass moulding dies, made of cemented tungsten carbide coated with PtIr on an adhesive Cr or Ni interlayer, by electron microscopy and atom probe tomography. During the exposure treatments at 630 °C under an oxygen partial pressure of 1.12 × 10"−"2"3 bar, Cr (Ni) was found to diffuse outwards via grain boundaries in the PtIr, altering the surface morphology. Upon dissolution of the interlayer, the WC substrate also started degrading. Extensive interdiffusion processes involving PtIr, Cr (Ni) and WC took place, leading to the formation of intermetallic phases and voids, deteriorating the adhesion of the coating.

  13. Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition

    CERN Document Server

    Kim, H

    2002-01-01

    We have investigated the growth kinetics of plasma-enhanced Ti atomic layer deposition (ALD) using a quartz crystal microbalance. Ti ALD films were grown at temperatures from 20 to 200 deg. C using TiCl sub 4 as a source gas and rf plasma-produced atomic H as the reducing agent. Postdeposition ex situ chemical analyses of thin films showed that the main impurity is oxygen, mostly incorporated during the air exposure prior to analysis. The thickness per cycle, corresponding to the growth rate, was measured by quartz crystal microbalance as a function of various key growth parameters, including TiCl sub 4 and H exposure time, rf plasma power, and sample temperature. The growth rates were independent of TiCl sub 4 exposure above 1x10 sup 3 L, indicating typical ALD mode growth. The key kinetic parameters for Cl extraction reaction and TiCl sub 4 adsorption kinetics were obtained and the growth kinetics were modeled to predict the growth rates based upon these results. Also, the dependency of growth kinetics on d...

  14. Oxidant-Dependent Thermoelectric Properties of Undoped ZnO Films by Atomic Layer Deposition

    KAUST Repository

    Kim, Hyunho

    2017-02-27

    Extraordinary oxidant-dependent changes in the thermoelectric properties of undoped ZnO thin films deposited by atomic layer deposition (ALD) have been observed. Specifically, deionized water and ozone oxidants are used in the growth of ZnO by ALD using diethylzinc as a zinc precursor. No substitutional atoms have been added to the ZnO films. By using ozone as an oxidant instead of water, a thermoelectric power factor (σS) of 5.76 × 10 W m K is obtained at 705 K for undoped ZnO films. In contrast, the maximum power factor for the water-based ZnO film is only 2.89 × 10 W m K at 746 K. Materials analysis results indicate that the oxygen vacancy levels in the water- and ozone-grown ZnO films are essentially the same, but the difference comes from Zn-related defects present in the ZnO films. The data suggest that the strong oxidant effect on thermoelectric performance can be explained by a mechanism involving point defect-induced differences in carrier concentration between these two oxides and a self-compensation effect in water-based ZnO due to the competitive formations of both oxygen and zinc vacancies. This strong oxidant effect on the thermoelectric properties of undoped ZnO films provides a pathway to improve the thermoelectric performance of this important material.

  15. Computer simulations of an oxygen inductively coupled plasma used for plasma-assisted atomic layer deposition

    International Nuclear Information System (INIS)

    Tinck, S; Bogaerts, A

    2011-01-01

    In this paper, an O 2 inductively coupled plasma used for plasma enhanced atomic layer deposition of Al 2 O 3 thin films is investigated by means of modeling. This work intends to provide more information about basic plasma properties such as species densities and species fluxes to the substrate as a function of power and pressure, which might be hard to measure experimentally. For this purpose, a hybrid model developed by Kushner et al is applied to calculate the plasma characteristics in the reactor volume for different chamber pressures ranging from 1 to 10 mTorr and different coil powers ranging from 50 to 500 W. Density profiles of the various oxygen containing plasma species are reported as well as fluxes to the substrate under various operating conditions. Furthermore, different orientations of the substrate, which can be placed vertically or horizontally in the reactor, are taken into account. In addition, special attention is paid to the recombination process of atomic oxygen on the different reactor walls under the stated operating conditions. From this work it can be concluded that the plasma properties change significantly in different locations of the reactor. The plasma density near the cylindrical coil is high, while it is almost negligible in the neighborhood of the substrate. Ion and excited species fluxes to the substrate are found to be very low and negligible. Finally, the orientation of the substrate has a minor effect on the flux of O 2 , while it has a significant effect on the flux of O. In the horizontal configuration, the flux of atomic oxygen can be up to one order of magnitude lower than in the vertical configuration.

  16. Atomic Layer Deposition of Chemical Passivation Layers and High Performance Anti-Reflection Coatings on Back-Illuminated Detectors

    Science.gov (United States)

    Hoenk, Michael E. (Inventor); Greer, Frank (Inventor); Nikzad, Shouleh (Inventor)

    2014-01-01

    A back-illuminated silicon photodetector has a layer of Al2O3 deposited on a silicon oxide surface that receives electromagnetic radiation to be detected. The Al2O3 layer has an antireflection coating deposited thereon. The Al2O3 layer provides a chemically resistant separation layer between the silicon oxide surface and the antireflection coating. The Al2O3 layer is thin enough that it is optically innocuous. Under deep ultraviolet radiation, the silicon oxide layer and the antireflection coating do not interact chemically. In one embodiment, the silicon photodetector has a delta-doped layer near (within a few nanometers of) the silicon oxide surface. The Al2O3 layer is expected to provide similar protection for doped layers fabricated using other methods, such as MBE, ion implantation and CVD deposition.

  17. Atmospheric spatial atomic-layer-deposition of Zn(O, S) buffer layer for flexible Cu(In, Ga)Se2 solar cells: From lab-scale to large area roll to roll processing

    NARCIS (Netherlands)

    Frijters, C.H.; Bolt, P.J.; Poodt, P.W.G.; Knaapen, R.; Brink, J. van den; Ruth, M.; Bremaud, D.; Illiberi, A.

    2016-01-01

    In this manuscript we present the first successful application of a spatial atomic-layer-deposition process to thin film solar cells. Zn(O,S) has been grown by spatial atomic layer deposition (S-ALD) at atmospheric pressure and applied as buffer layer in rigid and flexible CIGS cells by a lab-scale

  18. Determination of antimony by electrochemical hydride generation atomic absorption spectrometry in samples with high iron content using chelating resins as on-line removal system

    International Nuclear Information System (INIS)

    Bolea, E.; Arroyo, D.; Laborda, F.; Castillo, J.R.

    2006-01-01

    A method for the removal of the interference caused by iron on electrochemical generation of stibine is proposed. It consists of a chelating resin Chelex 100 column integrated into a flow injection system and coupled to the electrochemical hydride generator quartz tube atomic absorption spectrometer (EcHG-QT-AAS). Iron, as Fe(II), is retained in the column with high efficiency, close to 99.9% under optimal conditions. No significant retention was observed for Sb(III) under same conditions and a 97 ± 5% signal recovery was achieved. An electrochemical hydride generator with a concentric configuration and a reticulated vitreous carbon cathode was employed. The system is able to determine antimony concentrations in the range of ng ml -1 in presence of iron concentrations up to 400 mg l -1 . The procedure was validated by analyzing PACS-2 marine sediments reference material with a 4% (w/w) iron content and a [Fe]:[Sb] ratio of 4000:1, which caused total antimony signal suppression on the electrochemical hydride generation system. A compost sample with high iron content (0.7%, w/w), was also analyzed. A good agreement was found on both samples with the certified value and the antimony concentration determined by ICP-MS, respectively

  19. The fabrication of a double-layer atom chip with through silicon vias for an ultra-high-vacuum cell

    International Nuclear Information System (INIS)

    Chuang, Ho-Chiao; Lin, Yun-Siang; Lin, Yu-Hsin; Huang, Chi-Sheng

    2014-01-01

    This study presents a double-layer atom chip that provides users with increased diversity in the design of the wire patterns and flexibility in the design of the magnetic field. It is more convenient for use in atomic physics experiments. A negative photoresist, SU-8, was used as the insulating layer between the upper and bottom copper wires. The electrical measurement results show that the upper and bottom wires with a width of 100 µm can sustain a 6 A current without burnout. Another focus of this study is the double-layer atom chips integrated with the through silicon via (TSV) technique, and anodically bonded to a Pyrex glass cell, which makes it a desired vacuum chamber for atomic physics experiments. Thus, the bonded glass cell not only significantly reduces the overall size of the ultra-high-vacuum (UHV) chamber but also conducts the high current from the backside to the front side of the atom chip via the TSV under UHV (9.5 × 10 −10  Torr). The TSVs with a diameter of 70 µm were etched through by the inductively coupled plasma ion etching and filled by the bottom-up copper electroplating method. During the anodic bonding process, the electroplated copper wires and TSVs on atom chips also need to pass the examination of the required bonding temperature of 250 °C, under an applied voltage of 1000 V. Finally, the UHV test of the double-layer atom chips with TSVs at room temperature can be reached at 9.5 × 10 −10  Torr, thus satisfying the requirements of atomic physics experiments under an UHV environment. (paper)

  20. Nickel hydroxide ultrathin nanosheets as building blocks for electrochemically active layers

    Czech Academy of Sciences Publication Activity Database

    Schneiderová, Barbora; Demel, Jan; Pleštil, Josef; Janda, Pavel; Bohuslav, Jan; Ihiawakrim, D.; Ersen, O.; Rogez, G.; Lang, Kamil

    2013-01-01

    Roč. 1, č. 37 (2013), s. 11429-11437 ISSN 2050-7488 R&D Projects: GA ČR GAP207/10/1447; GA ČR GP13-09462P Institutional support: RVO:61388980 ; RVO:61389013 ; RVO:61388955 Keywords : layered hydroxide * delamination * nanosheet * batteries Subject RIV: CA - Inorganic Chemistry; CD - Macromolecular Chemistry (UMCH-V); CF - Physical ; Theoretical Chemistry (UFCH-W)