WorldWideScience

Sample records for electrically controlled semiconductor

  1. Electrical Control of Excitons in Semiconductor Nanostructures

    DEFF Research Database (Denmark)

    Kirsanské, Gabija

    The scope of this thesis covers investigation of the exciton Mott transition in coupled quantum wells, fabrication of photonic-crystal structures with embedded self-assembled quantum dots, and tuning of their properties by means of an external electric field. In the first part of the thesis the f...

  2. Active RF Pulse Compression Using An Electrically Controlled Semiconductor Switch

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Jiquan; Tantawi, Sami; /SLAC

    2007-01-10

    First we review the theory of active pulse compression systems using resonant delay lines. Then we describe the design of an electrically controlled semiconductor active switch. The switch comprises an active window and an overmoded waveguide three-port network. The active window is based on a four-inch silicon wafer which has 960 PIN diodes. These are spatially combined in an overmoded waveguide. We describe the philosophy and design methodology for the three-port network and the active window. We then present the results of using this device to compress 11.4 GHz RF signals with high compression ratios. We show how the system can be used with amplifier like sources, in which one can change the phase of the source by manipulating the input to the source. We also show how the active switch can be used to compress a pulse from an oscillator like sources, which is not possible with passive pulse compression systems.

  3. Semiconductor Electrical Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Electrical Measurements Laboratory is a research laboratory which complements the Optical Measurements Laboratory. The laboratory provides for Hall...

  4. Electric field control photo-induced Hall currents in semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Miah, M. Idrish [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong, Chittagong 4331 (Bangladesh)], E-mail: m.miah@griffith.edu.au

    2008-10-15

    We generate spin-polarized carrier populations in GaAs and low temperature-grown GaAs (LT-GaAs) by circularly polarized optical beams and pull them by external electric fields to create spin-polarized currents. In the presence of the optically generated spin currents, anomalous Hall currents with an enhancement with increasing doping are observed and found to be almost steady in moderate electric fields up to {approx}120 mV {mu}m{sup -1}, indicating that photo-induced spin orientation of electrons is preserved in these systems. However, a field {approx}300 mV {mu}m{sup -1} completely destroys the electron spin polarization due to an increase of the D'yakonov-Perel' spin precession frequency of the hot electrons. This suggests that high field carrier transport conditions might not be suitable for spin-based technology with GaAs and LT-GaAs. It is also demonstrated that the presence of the excess arsenic sites in LT-GaAs might not affect the spin relaxation by Bir-Aronov-Pikus mechanism owing to a large number of electrons in n-doped materials.

  5. Isotopically controlled semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Haller, Eugene E.

    2006-06-19

    The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

  6. Single-mode very wide tunability in laterally coupled semiconductor lasers with electrically controlled reflectivities

    Science.gov (United States)

    Griffel, Giora; Chen, Howard Z.; Grave, Ilan; Yariv, Amnon

    1991-04-01

    The operation of a novel multisection structure comprised of laterally coupled gain-guided semiconductor lasers is demonstrated. It is shown that tunable single longitudinal mode operation can be achieved with a high degree of frequency selectivity. The device has a tuning range of 14.5 nm, the widest observed to date in a monolithic device.

  7. Optical coherent control in semiconductors

    DEFF Research Database (Denmark)

    Østergaard, John Erland; Vadim, Lyssenko; Hvam, Jørn Märcher

    2001-01-01

    of quantum control including the recent applications to semiconductors and nanostructures. We study the influence of inhomogeneous broadening in semiconductors on CC results. Photoluminescence (PL) and the coherent emission in four-wave mixing (FWM) is recorded after resonant excitation with phase...

  8. Temperature controller of semiconductor laser

    Czech Academy of Sciences Publication Activity Database

    Matoušek, Vít; Číp, Ondřej

    2003-01-01

    Roč. 73, č. 3 (2003), s. 10 - 12 ISSN 0928-5008 Institutional research plan: CEZ:AV0Z2065902 Keywords : temperature controller * semiconductor laser * laser diode Subject RIV: BH - Optics, Masers, Lasers

  9. Semiconductor

    International Nuclear Information System (INIS)

    2000-01-01

    This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

  10. Physics with isotopically controlled semiconductors

    International Nuclear Information System (INIS)

    Haller, E.E.

    1994-08-01

    Control of the isotopic composition of semiconductors offers a wide range of new scientific opportunities. In this paper a number of recent results obtained with isotopically pure as well as deliberately mixed diamond and Ge bulk single crystals and Ge isotope superlattices will be reviewed. Isotopic composition affects several properties such as phonon energies, bandstructure and lattice constant in subtle but theoretically well understood ways. Large effects are observed for thermal conductivity, local vibrational modes of impurities and after neutron transmutation doping (NTD). Several experiments which could profit greatly from isotope control are proposed

  11. Temperature control of power semiconductor devices in traction applications

    Science.gov (United States)

    Pugachev, A. A.; Strekalov, N. N.

    2017-02-01

    The peculiarity of thermal management of traction frequency converters of a railway rolling stock is highlighted. The topology and the operation principle of the automatic temperature control system of power semiconductor modules of the traction frequency converter are designed and discussed. The features of semiconductors as an object of temperature control are considered; the equivalent circuit of thermal processes in the semiconductors is suggested, the power losses in the two-level voltage source inverters are evaluated and analyzed. The dynamic properties and characteristics of the cooling fan induction motor electric drive with the scalar control are presented. The results of simulation in Matlab are shown for the steady state of thermal processes.

  12. Elementary steps in electrical doping of organic semiconductors

    KAUST Repository

    Tietze, Max Lutz; Benduhn, Johannes; Pahner, Paul; Nell, Bernhard; Schwarze, Martin; Kleemann, Hans; Krammer, Markus; Zojer, Karin; Vandewal, Koen; Leo, Karl

    2018-01-01

    Fermi level control by doping is established since decades in inorganic semiconductors and has been successfully introduced in organic semiconductors. Despite its commercial success in the multi-billion OLED display business, molecular doping

  13. Electrical control of optical orientation of neutral and negatively charged excitons in an n -type semiconductor quantum well

    Science.gov (United States)

    Dzhioev, R. I.; Korenev, V. L.; Lazarev, M. V.; Sapega, V. F.; Gammon, D.; Bracker, A. S.

    2007-01-01

    We report electric field induced increase of spin orientation of negatively charged excitons (trions) localized in n -type GaAs/AlGaAs quantum well. Under resonant excitation of free neutral heavy-hole excitons, the polarization of trions increases dramatically with electrical injection of electrons. The polarization enhancement correlates strongly with trion/exciton luminescence intensity ratio. This effect results from a very efficient trapping of free neutral excitons by the quantum well interfacial fluctuations (“natural” quantum dots) containing resident electrons.

  14. The pursuit of electrically-driven organic semiconductor lasers

    NARCIS (Netherlands)

    Bisri, Satria Zulkarnaen; Takenobu, Taishi; Iwasa, Yoshihiro

    2014-01-01

    Organic semiconductors have many favourable and plastic-like optical properties that are promising for the development of low energy consuming laser devices. Although optically-pumped organic semiconductor lasers have been demonstrated since the early days of lasers, electrically-driven organic

  15. Inductance, electrically adjusted by semiconductor structure

    Directory of Open Access Journals (Sweden)

    Semenov А. А.

    2012-08-01

    Full Text Available A theoretical model of a passive flat inductor with electronic control is offered. Design charts of tank inductance and Q factor dependence on the forward bias voltage of n—i—p—i—n-structure, used as a specific core, the characteristics of which are regulated under the influence of an applied electric field, are presented. The comparison of design values with experimental features has shown their good correspondence with each other.

  16. Calculation of the internal electric field within doped semiconductors

    International Nuclear Information System (INIS)

    Phelps, G J

    2012-01-01

    A detailed model for the calculation of the internal potential and electric field profile within doped semiconductors is developed from a first-principles approach and presented in this paper. The model utilizes Poisson's equation and basic Boltzmann statistics to develop a standard nonlinear Poisson–Boltzmann equation (NPBE) for doped semiconductors. The resultant NPBE links the internal electrostatic potential within the doped semiconductor to the doping concentration profile of the semiconductor device under consideration. The NPBE is solved by the application of numerical methods, is general in formulation, supporting multiple simultaneous dopant configurations, and may be applied to any semiconductor type. Calculated results of the electric field profile for various semiconductor dopant structures derived using the model are additionally presented in this paper. The electric field results predicted by the model are shown to be in excellent agreement with those found by other methods. The model may be expanded to accommodate effects involving internal substrate electron–hole pair generation (gemination) caused by photo-ionization for application to and the modeling of solar cell device structures. (paper)

  17. Mathematical Modelling and Simulation of Electrical Circuits and Semiconductor Devices

    CERN Document Server

    Merten, K; Bulirsch, R

    1990-01-01

    Numerical simulation and modelling of electric circuits and semiconductor devices are of primal interest in today's high technology industries. At the Oberwolfach Conference more than forty scientists from around the world, in­ cluding applied mathematicians and electrical engineers from industry and universities, presented new results in this area of growing importance. The contributions to this conference are presented in these proceedings. They include contributions on special topics of current interest in circuit and device simulation, as well as contributions that present an overview of the field. In the semiconductor area special lectures were given on mixed finite element methods and iterative procedures for the solution of large linear systems. For three dimensional models new discretization procedures including software packages were presented. Con­ nections between semiconductor equations and the Boltzmann equation were shown as well as relations to the quantum transport equation. Other issues dis...

  18. Controlling Molecular Doping in Organic Semiconductors.

    Science.gov (United States)

    Jacobs, Ian E; Moulé, Adam J

    2017-11-01

    The field of organic electronics thrives on the hope of enabling low-cost, solution-processed electronic devices with mechanical, optoelectronic, and chemical properties not available from inorganic semiconductors. A key to the success of these aspirations is the ability to controllably dope organic semiconductors with high spatial resolution. Here, recent progress in molecular doping of organic semiconductors is summarized, with an emphasis on solution-processed p-type doped polymeric semiconductors. Highlighted topics include how solution-processing techniques can control the distribution, diffusion, and density of dopants within the organic semiconductor, and, in turn, affect the electronic properties of the material. Research in these areas has recently intensified, thanks to advances in chemical synthesis, improved understanding of charged states in organic materials, and a focus on relating fabrication techniques to morphology. Significant disorder in these systems, along with complex interactions between doping and film morphology, is often responsible for charge trapping and low doping efficiency. However, the strong coupling between doping, solubility, and morphology can be harnessed to control crystallinity, create doping gradients, and pattern polymers. These breakthroughs suggest a role for molecular doping not only in device function but also in fabrication-applications beyond those directly analogous to inorganic doping. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Theory of semiconductor junction devices a textbook for electrical and electronic engineers

    CERN Document Server

    Leck, J H

    1967-01-01

    Theory of Semiconductor Junction Devices: A Textbook for Electrical and Electronic Engineers presents the simplified numerical computation of the fundamental electrical equations, specifically Poisson's and the Hall effect equations. This book provides the fundamental theory relevant for the understanding of semiconductor device theory. Comprised of 10 chapters, this book starts with an overview of the application of band theory to the special case of semiconductors, both intrinsic and extrinsic. This text then describes the electrical properties of conductivity, semiconductors, and Hall effe

  20. Electrically pumped edge-emitting photonic bandgap semiconductor laser

    Science.gov (United States)

    Lin, Shawn-Yu; Zubrzycki, Walter J.

    2004-01-06

    A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

  1. Fundamentals of semiconductor manufacturing and process control

    CERN Document Server

    May, Gary S

    2006-01-01

    A practical guide to semiconductor manufacturing from process control to yield modeling and experimental design Fundamentals of Semiconductor Manufacturing and Process Control covers all issues involved in manufacturing microelectronic devices and circuits, including fabrication sequences, process control, experimental design, process modeling, yield modeling, and CIM/CAM systems. Readers are introduced to both the theory and practice of all basic manufacturing concepts. Following an overview of manufacturing and technology, the text explores process monitoring methods, including those that focus on product wafers and those that focus on the equipment used to produce wafers. Next, the text sets forth some fundamentals of statistics and yield modeling, which set the foundation for a detailed discussion of how statistical process control is used to analyze quality and improve yields. The discussion of statistical experimental design offers readers a powerful approach for systematically varying controllable p...

  2. High-electric-field quantum transport theory for semiconductor superlattices

    International Nuclear Information System (INIS)

    Nguyen Hong Shon; Nazareno, H.N.

    1995-12-01

    Based on the Baym-Kadanoff-Keldysh nonequilibrium Green's functions technique, a quantum transport theory for semiconductor superlattices under high-electric field is developed. This theory is capable of considering collisional broadening, intra-collisional field effects and band transport and hopping regimes simultaneously. Numerical calculations for narrow-miniband superlattices in high electric field, when the hopping regime dominates are in reasonable agreement with experimental results and show a significant deviation from the Boltzmann theory. A semiphenomenological formula for current density in hopping regime is proposed. (author). 60 refs, 4 figs

  3. Electrical characterization of doped semiconductor nanostructures with scanning microwave microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Fenner, Matthias A.; Tanbakuchi, Hassan [Agilent Technologies, Kronberg (Germany); Streit, Stephan; Baumgart, Christine; Helm, Manfred; Schmidt, Heidemarie [Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf e.V., Dresden (Germany)

    2010-07-01

    Highly sensitive scanning microwave microscopy (SMM) with a capacitance resolution in the aF range has been used to investigate the electrical properties of doped semiconductor nanostructures in the microwave frequency range from 1.5 GHz to 6 GHz at different dc offset biases. The microwave signal S11 reflected by the sample is related to the impedance of the sample. Superimposing an ac voltage in the kHz range one also gains information about the derivative of the S11 signal (dC/dV), which is dependent on the doping density in the semiconductor, circuit resistance, and reactance. We investigated a static random access memory (SRAM) cell and one cross-sectionally prepared Si epilayer structured sample. The derivative of S11 strongly depends on the dc offset bias. The Si epilayer sample reveals the strongest dependence on f{sub ac} and also on the biasing history during the SMM measurements.

  4. Analytical approaches to optimizing system "Semiconductor converter-electric drive complex"

    Science.gov (United States)

    Kormilicin, N. V.; Zhuravlev, A. M.; Khayatov, E. S.

    2018-03-01

    In the electric drives of the machine-building industry, the problem of optimizing the drive in terms of mass-size indicators is acute. The article offers analytical methods that ensure the minimization of the mass of a multiphase semiconductor converter. In multiphase electric drives, the form of the phase current at which the best possible use of the "semiconductor converter-electric drive complex" for active materials is different from the sinusoidal form. It is shown that under certain restrictions on the phase current form, it is possible to obtain an analytical solution. In particular, if one assumes the shape of the phase current to be rectangular, the optimal shape of the control actions will depend on the width of the interpolar gap. In the general case, the proposed algorithm can be used to solve the problem under consideration by numerical methods.

  5. Electricity sequence control

    International Nuclear Information System (INIS)

    Shin, Heung Ryeol

    2010-03-01

    The contents of the book are introduction of control system, like classification and control signal, introduction of electricity power switch, such as push-button and detection switch sensor for induction type and capacitance type machinery for control, solenoid valve, expression of sequence and type of electricity circuit about using diagram, time chart, marking and term, logic circuit like Yes, No, and, or and equivalence logic, basic electricity circuit, electricity sequence control, added condition, special program control about choice and jump of program, motor control, extra circuit on repeat circuit, pause circuit in a conveyer, safety regulations and rule about classification of electricity disaster and protective device for insulation.

  6. An electrically injected rolled-up semiconductor tube laser

    Energy Technology Data Exchange (ETDEWEB)

    Dastjerdi, M. H. T.; Djavid, M.; Mi, Z., E-mail: zetian.mi@mcgill.ca [Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9 (Canada)

    2015-01-12

    We have demonstrated electrically injected rolled-up semiconductor tube lasers, which are formed when a coherently strained InGaAs/InGaAsP quantum well heterostructure is selectively released from the underlying InP substrate. The device exhibits strong coherent emission in the wavelength range of ∼1.5 μm. A lasing threshold of ∼1.05 mA is measured for a rolled-up tube with a diameter of ∼5 μm and wall thickness of ∼140 nm at 80 K. The Purcell factor is estimated to be ∼4.3.

  7. Diffusive, Structural, Optical, and Electrical Properties of Defects in Semiconductors

    CERN Multimedia

    Wagner, F E

    2002-01-01

    Electronic properties of semiconductors are extremely sensitive to defects and impurities that have localized electronic states with energy levels in the band gap of the semiconductor. Spectroscopic techniques like photoluminescence (PL), deep level transient spectroscopy (DLTS), or Hall effect, that are able to detect and characterize band gap states do not reveal direct information about their microscopic origin. To overcome this chemical "blindness", the present approach is to use radioactive isotopes as a tracer. Moreover, the recoil energies involved in $\\beta$ and $\\gamma$-decays can be used to create intrinsic isolated point defects (interstitials, vacancies) in a controlled way. A microscopic insight into the structure and the thermodynamic properties of complexes formed by interacting defects can be gained by detecting the hyperfine interaction between the nuclear moments of radioactive dopants and the electromagnetic fields present at the site of the radioactive nucleus. The understanding and the co...

  8. Tunneling emission of electrons from semiconductors' valence bands in high electric fields

    International Nuclear Information System (INIS)

    Kalganov, V. D.; Mileshkina, N. V.; Ostroumova, E. V.

    2006-01-01

    Tunneling emission currents of electrons from semiconductors to vacuum (needle-shaped GaAs photodetectors) and to a metal (silicon metal-insulator-semiconductor diodes with a tunneling-transparent insulator layer) are studied in high and ultrahigh electric fields. It is shown that, in semiconductors with the n-type conductivity, the major contribution to the emission current is made by the tunneling emission of electrons from the valence band of the semiconductor, rather than from the conduction band

  9. Control of Electric Vehicle

    OpenAIRE

    Huang, Qi; Chen, Yong; Li, Jian

    2010-01-01

    In this chapter, the modeling of electric vehicle is discussed in detail. Then, the control of electric vehicle driven by different motors is discussed. Both brushed and brushless DC (Direct Current) motors are discussed. And for AC (Alternative Current) motors, the discussion is focused on induction motor and permanent magnet synchronous motor. The design of controllers for different motor-driven electric vehicle is discussed in-depth, and the tested high-performance control strategies for d...

  10. Elementary steps in electrical doping of organic semiconductors

    KAUST Repository

    Tietze, Max Lutz

    2018-03-15

    Fermi level control by doping is established since decades in inorganic semiconductors and has been successfully introduced in organic semiconductors. Despite its commercial success in the multi-billion OLED display business, molecular doping is little understood, with its elementary steps controversially discussed and mostly-empirical-materials design. Particularly puzzling is the efficient carrier release, despite a presumably large Coulomb barrier. Here we quantitatively investigate doping as a two-step process, involving single-electron transfer from donor to acceptor molecules and subsequent dissociation of the ground-state integer-charge transfer complex (ICTC). We show that carrier release by ICTC dissociation has an activation energy of only a few tens of meV, despite a Coulomb binding of several 100 meV. We resolve this discrepancy by taking energetic disorder into account. The overall doping process is explained by an extended semiconductor model in which occupation of ICTCs causes the classically known reserve regime at device-relevant doping concentrations.

  11. Nuclear Electrical and Optical Studies of Hydrogen in Semiconductors.

    CERN Multimedia

    Dietrich, M; Toulemonde, M

    2002-01-01

    During the last years, the understanding of H and its interaction with dopant atoms in Si, Ge and III-V semiconductors has improved considerably concerning the stability of the formed complexes their structural arrangements, and the implications of this interaction on the electrical properties of the semiconductors " passivation " The perturbed angular correlation technique (PAC) has contributed to the understanding of this phenomena on an atomistic scale using radioactive isotopes provided by ISOLDE. \\\\ \\\\The aim of the proposed experiments is twofold: \\\\ \\\\\\begin{enumerate} \\item The H passivation mechanism of acceptors in GaN and ternary III-V compounds (AlGaAs, GaInP, AlGaN) shall be investigated, using the PAC probe atom $^{111m}$Cd as a 'representative' of group II-B metal acceptors. The problems addressed in these technological important systems are microscopic structure, formation and stability of the hydrogen correlated complexes as function of doping and stoichiometry (i.e. the size of the band gap)...

  12. The Electrical Characteristics of The N-Organic Semiconductor/P-Inorganic Semiconductor Diode

    International Nuclear Information System (INIS)

    Aydin, M. E.

    2008-01-01

    n-organic semiconductor (PEDOT) / p-inorganic semiconductor Si diode was formed by deep coating method. The method has been achieved by coating n-inorganic semiconductor PEDOT on top of p-inorganic semiconductor. The n-organic semiconductor PEDOT/ p-inorganic semiconductor diode demonstrated rectifying behavior by the current-voltage (I-V) curves studied at room temperature. The barrier height , ideality factor values were obtained as of 0.88 eV and 1.95 respectively. The diode showed non-ideal I-V behavior with an ideality factor greater than unity that could be ascribed to the interfacial layer

  13. Combined Electrical, Optical and Nuclear Investigations of Impurities and Defects in II-VI Semiconductors

    CERN Multimedia

    2002-01-01

    % IS325 \\\\ \\\\ To achieve well controlled bipolar conductivity in II-VI semiconductors represents a fundamental problem in semiconductor physics. The doping problems are controversely discussed, either in terms of self compensation or of compensation and passivation by unintentionally introduced impurities. \\\\ \\\\It is the goal of our experiments at the new ISOLDE facility, to shed new light on these problems and to look for ways to circumvent it. For this aim the investigation of impurities and native defects and the interaction between each other shall be investigated. The use of radioactive ion beams opens the access to controlled site selective doping of only one sublattice via nuclear transmutation. The compensating and passivating mechanisms will be studied by combining nuclear, electrical and optical methods like Perturbed Angular Correlation~(PAC), Hall Effect~(HE), Deep Level Transient Spectroscopy~(DLTS), Photoluminescence Spectroscopy~(PL) and electron paramagnetic resonance (EPR). \\\\ \\\\We intend to ...

  14. Semiconductor Laser Wind Lidar for Turbine Control

    DEFF Research Database (Denmark)

    Hu, Qi

    This thesis describes an experimentally oriented study of continuous wave (CW) coherent Doppler lidar system design. The main application is remote wind sensing for active wind turbine control using nacelle mounted lidar systems; and the primary focus is to devise an industrial instrument that can...... historical overview within the topic of wind lidar systems. Both the potential and the challenges of an industrialized wind lidar has been addressed here. Furthermore, the basic concept behind the heterodyne detection and a brief overview of the lidar signal processing is explained; and a simple...... investigation of the telescope truncation and lens aberrations is conducted, both numerically and experimentally. It is shown that these parameters dictate the spatial resolution of the lidar system, and have profound impact on the SNR. In this work, an all-semiconductor light source is used in the lidar design...

  15. Electrical control of superparamagnetism

    Science.gov (United States)

    Yamada, Kihiro T.; Koyama, Tomohiro; Kakizakai, Haruka; Miwa, Kazumoto; Ando, Fuyuki; Ishibashi, Mio; Kim, Kab-Jin; Moriyama, Takahiro; Ono, Shimpei; Chiba, Daichi; Ono, Teruo

    2017-01-01

    The electric field control of superparamagnetism is realized using a Cu/Ni system, in which the deposited Ni shows superparamagnetic behavior above the blocking temperature. An electric double-layer capacitor (EDLC) with the Cu/Ni electrode and a nonmagnetic counter electrode is fabricated to examine the electric field effect on magnetism in the magnetic electrode. By changing the voltage applied to the EDLC, the blocking temperature of the system is clearly modulated.

  16. Transient optical and electrical effects in polymeric semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bange, Sebastian

    2009-05-28

    Classical semiconductor physics has been continuously improving electronic components such as diodes, light-emitting diodes, solar cells and transistors based on highly purified inorganic crystals over the past decades. Organic semiconductors, notably polymeric, are a comparatively young field of research, the first light-emitting diode based on conjugated polymers having been demonstrated in 1990. Polymeric semiconductors are of tremendous interest for high-volume, low-cost manufacturing (''printed electronics''). Due to their rather simple device structure mostly comprising only one or two functional layers, polymeric diodes are much more difficult to optimize compared to small-molecular organic devices. Usually, functions such as charge injection and transport are handled by the same material which thus needs to be highly optimized. The present work contributes to expanding the knowledge on the physical mechanisms determining device performance by analyzing the role of charge injection and transport on device efficiency for blue and white-emitting devices, based on commercially relevant spiro-linked polyfluorene derivatives. It is shown that such polymers can act as very efficient electron conductors and that interface effects such as charge trapping play the key role in determining the overall device efficiency. This work contributes to the knowledge of how charges drift through the polymer layer to finally find neutral emissive trap states and thus allows a quantitative prediction of the emission color of multichromophoric systems, compatible with the observed color shifts upon driving voltage and temperature variation as well as with electrical conditioning effects. In a more methodically oriented part, it is demonstrated that the transient device emission observed upon terminating the driving voltage can be used to monitor the decay of geminately-bound species as well as to determine trapped charge densities. This enables direct comparisons with numerical

  17. Transient optical and electrical effects in polymeric semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bange, Sebastian

    2009-05-28

    Classical semiconductor physics has been continuously improving electronic components such as diodes, light-emitting diodes, solar cells and transistors based on highly purified inorganic crystals over the past decades. Organic semiconductors, notably polymeric, are a comparatively young field of research, the first light-emitting diode based on conjugated polymers having been demonstrated in 1990. Polymeric semiconductors are of tremendous interest for high-volume, low-cost manufacturing (''printed electronics''). Due to their rather simple device structure mostly comprising only one or two functional layers, polymeric diodes are much more difficult to optimize compared to small-molecular organic devices. Usually, functions such as charge injection and transport are handled by the same material which thus needs to be highly optimized. The present work contributes to expanding the knowledge on the physical mechanisms determining device performance by analyzing the role of charge injection and transport on device efficiency for blue and white-emitting devices, based on commercially relevant spiro-linked polyfluorene derivatives. It is shown that such polymers can act as very efficient electron conductors and that interface effects such as charge trapping play the key role in determining the overall device efficiency. This work contributes to the knowledge of how charges drift through the polymer layer to finally find neutral emissive trap states and thus allows a quantitative prediction of the emission color of multichromophoric systems, compatible with the observed color shifts upon driving voltage and temperature variation as well as with electrical conditioning effects. In a more methodically oriented part, it is demonstrated that the transient device emission observed upon terminating the driving voltage can be used to monitor the decay of geminately-bound species as well as to determine trapped charge densities. This enables direct

  18. Microeconomics of process control in semiconductor manufacturing

    Science.gov (United States)

    Monahan, Kevin M.

    2003-06-01

    Process window control enables accelerated design-rule shrinks for both logic and memory manufacturers, but simple microeconomic models that directly link the effects of process window control to maximum profitability are rare. In this work, we derive these links using a simplified model for the maximum rate of profit generated by the semiconductor manufacturing process. We show that the ability of process window control to achieve these economic objectives may be limited by variability in the larger manufacturing context, including measurement delays and process variation at the lot, wafer, x-wafer, x-field, and x-chip levels. We conclude that x-wafer and x-field CD control strategies will be critical enablers of density, performance and optimum profitability at the 90 and 65nm technology nodes. These analyses correlate well with actual factory data and often identify millions of dollars in potential incremental revenue and cost savings. As an example, we show that a scatterometry-based CD Process Window Monitor is an economically justified, enabling technology for the 65nm node.

  19. Molecular Electrical Doping of Organic Semiconductors: Fundamental Mechanisms and Emerging Dopant Design Rules.

    Science.gov (United States)

    Salzmann, Ingo; Heimel, Georg; Oehzelt, Martin; Winkler, Stefanie; Koch, Norbert

    2016-03-15

    Today's information society depends on our ability to controllably dope inorganic semiconductors, such as silicon, thereby tuning their electrical properties to application-specific demands. For optoelectronic devices, organic semiconductors, that is, conjugated polymers and molecules, have emerged as superior alternative owing to the ease of tuning their optical gap through chemical variability and their potential for low-cost, large-area processing on flexible substrates. There, the potential of molecular electrical doping for improving the performance of, for example, organic light-emitting devices or organic solar cells has only recently been established. The doping efficiency, however, remains conspicuously low, highlighting the fact that the underlying mechanisms of molecular doping in organic semiconductors are only little understood compared with their inorganic counterparts. Here, we review the broad range of phenomena observed upon molecularly doping organic semiconductors and identify two distinctly different scenarios: the pairwise formation of both organic semiconductor and dopant ions on one hand and the emergence of ground state charge transfer complexes between organic semiconductor and dopant through supramolecular hybridization of their respective frontier molecular orbitals on the other hand. Evidence for the occurrence of these two scenarios is subsequently discussed on the basis of the characteristic and strikingly different signatures of the individual species involved in the respective doping processes in a variety of spectroscopic techniques. The critical importance of a statistical view of doping, rather than a bimolecular picture, is then highlighted by employing numerical simulations, which reveal one of the main differences between inorganic and organic semiconductors to be their respective density of electronic states and the doping induced changes thereof. Engineering the density of states of doped organic semiconductors, the Fermi

  20. Electrical and Optical Characterization of Nanowire based Semiconductor Devices

    Science.gov (United States)

    Ayvazian, Talin

    This research project is focused on a new strategy for the creation of nanowire based semiconductor devices. The main goal is to understand and optimize the electrical and optical properties of two types of nanoscale devices; in first type lithographically patterned nanowire electrodeposition (LPNE) method has been utilized to fabricate nanowire field effect transistors (NWFET) and second type involved the development of light emitting semiconductor nanowire arrays (NWLED). Field effect transistors (NWFETs) have been prepared from arrays of polycrystalline cadmium selenide (pc-CdSe) nanowires using a back gate configuration. pc-CdSe nanowires were fabricated using the lithographically patterned nanowire electrode- position (LPNE) process on SiO2 /Si substrates. After electrodeposition, pc-CdSe nanowires were thermally annealed at 300 °C x 4 h either with or without exposure to CdCl 2 in methanol a grain growth promoter. The influence of CdCl2 treatment was to increase the mean grain diameter as determined by X-ray diffraction pattern and to convert the crystal structure from cubic to wurtzite. Transfer characteristics showed an increase of the field effect mobility (mu eff) by an order of magnitude and increase of the Ion/I off ratio by a factor of 3-4. Light emitting devices (NW-LED) based on lithographically patterned pc-CdSe nanowire arrays have been investigated. Electroluminescence (EL) spectra of CdSe nanowires under various biases exhibited broad emission spectra centered at 750 nm close to the band gap of CdSe (1.7eV). To enhance the intensity of the emitted light and the external quantum efficiency (EQE), the distance between the contacts were reduced from 5 mum to less than 1 mum which increased the efficiency by an order of magnitude. Also, increasing the annealing temperature of nanowires from 300 °C x4 h to 450 This research project is focused on a new strategy for the creation of nanowire based semiconductor devices. The main goal is to understand

  1. Semiconductor plasmonic crystals: active control of THz extinction

    International Nuclear Information System (INIS)

    Schaafsma, M C; Rivas, J Gómez

    2013-01-01

    We investigate theoretically the enhanced THz extinction by periodic arrays of semiconductor particles. Scattering particles of doped semiconductors can sustain localized surface plasmon polaritons, which can be diffractively coupled giving rise to surface lattice resonances. These resonances are characterized by a large extinction and narrow bandwidth, which can be tuned by controlling the charge carrier density in the semiconductor. The underlaying mechanism leading to this tuneability is explained using the coupled dipole approximation and considering GaAs as the semiconductor. The enhanced THz extinction in arrays of GaAs particles could be tuned in a wide range by optical pumping of charge carriers. (invited article)

  2. CONVERTER SOLAR RADIATION INTO ELECTRICITY TO SUPPLY THE AUTOMOTIVE SEMICONDUCTOR THERMOELECTRIC AIR CONDITIONING

    Directory of Open Access Journals (Sweden)

    T. A. Ismailov

    2015-01-01

    Full Text Available The article considers the possibility to increase the efficiency of converters of solar radiation into electricity by combining constructive photoelectric effect, See-beck thermoeffect and semiconductor solar cells, which will create integrated device to provide power semiconductor thermoelectric automobile air conditioner. 

  3. Quantum dynamical phenomena of independent electrons in semiconductor superlattices subject to a uniform electric field

    International Nuclear Information System (INIS)

    Bouchard, A.M.

    1994-01-01

    This report discusses the following topics: Bloch oscillations and other dynamical phenomena of electrons in semiconductor superlattices; solvable dynamical model of an electron in a one-dimensional aperiodic lattice subject to a uniform electric field; and quantum dynamical phenomena of electrons in aperiodic semiconductor superlattices

  4. The molecularly controlled semiconductor resistor: how does it work?

    Science.gov (United States)

    Capua, Eyal; Natan, Amir; Kronik, Leeor; Naaman, Ron

    2009-11-01

    We examine the current response of molecularly controlled semiconductor devices to the presence of weakly interacting analytes. We evaluate the response of two types of devices, a silicon oxide coated silicon device and a GaAs/AlGaAs device, both coated with aliphatic chains and exposed to the same set of analytes. By comparing the device electrical response with contact potential difference and surface photovoltage measurements, we show that there are two mechanisms that may affect the underlying substrate, namely, formation of layers with a net dipolar moment and molecular interaction with surface states. We find that whereas the Si device response is mostly correlated to the analyte dipole, the GaAs device response is mostly correlated to interactions with surface states. Existence of a silicon oxide layer, whether native on the Si or deliberately grown on the GaAs, eliminates analyte interaction with the surface states.

  5. Electrically Induced Two-Photon Transparency in Semiconductor Quantum Wells

    International Nuclear Information System (INIS)

    Hayat, Alex; Nevet, Amir; Orenstein, Meir

    2009-01-01

    We demonstrate experimentally two-photon transparency, achieved by current injection into a semiconductor quantum-well structure which exhibits two-photon emission. The two-photon induced luminescence is progressively reduced by the injected current, reaching the point of two-photon transparency - a necessary condition for semiconductor two-photon gain and lasing. These results agree with our calculations.

  6. Controlled Quantum Operations of a Semiconductor Three-Qubit System

    Science.gov (United States)

    Li, Hai-Ou; Cao, Gang; Yu, Guo-Dong; Xiao, Ming; Guo, Guang-Can; Jiang, Hong-Wen; Guo, Guo-Ping

    2018-02-01

    In a specially designed semiconductor device consisting of three capacitively coupled double quantum dots, we achieve strong and tunable coupling between a target qubit and two control qubits. We demonstrate how to completely switch on and off the target qubit's coherent rotations by presetting two control qubits' states. A Toffoli gate is, therefore, possible based on these control effects. This research paves a way for realizing full quantum-logic operations in semiconductor multiqubit systems.

  7. Modification of semiconductor materials using laser-produced ion streams additionally accelerated in the electric fields

    International Nuclear Information System (INIS)

    Rosinski, M.; Badziak, B.; Parys, P.; Wolowski, J.; Pisarek, M.

    2009-01-01

    The laser-produced ion stream may be attractive for direct ultra-low-energy ion implantation in thin layer of semiconductor for modification of electrical and optical properties of semiconductor devices. Application of electrostatic fields for acceleration and formation of laser-generated ion stream enables to control the ion stream parameters in broad energy and current density ranges. It also permits to remove the useless laser-produced ions from the ion stream designed for implantation. For acceleration of ions produced with the use of a low fluence repetitive laser system (Nd:glass: 2 Hz, pulse duration: 3.5 ns, pulse energy:∼0.5 J, power density: 10 10 W/cm 2 ) in IPPLM the special electrostatic system has been prepared. The laser-produced ions passing through the diaphragm (a ring-shaped slit in the HV box) have been accelerated in the system of electrodes. The accelerating voltage up to 40 kV, the distance of the diaphragm from the target, the diaphragm diameter and the gap width were changed for choosing the desired parameters (namely the energy band of the implanted ions) of the ion stream. The characteristics of laser-produced Ge ion streams were determined with the use of precise ion diagnostic methods, namely: electrostatic ion energy analyser and various ion collectors. The laser-produced and post-accelerated Ge ions have been used for implantation into semiconductor materials for nanocrystal fabrication. The characteristics of implanted samples were measured using AES

  8. Effects of electric field and magnetic induction on spin injection into organic semiconductors

    International Nuclear Information System (INIS)

    Wang, Y.M.; Ren, J.F.; Yuan, X.B.; Dou, Z.T.; Hu, G.C.

    2011-01-01

    Spin-polarized injection and transport into ferromagnetic/organic semiconductor structure are studied theoretically in the presence of the external electric field and magnetic induction. Based on the spin-drift-diffusion theory and Ohm's law, we obtain the charge current polarization, which takes into account the special carriers of organic semiconductors. From the calculation, it is found that the current spin polarization is enhanced by several orders of magnitude by tuning the magnetic induction and electric fields. To get an apparent current spin polarization, the effects of spin-depended interfacial resistances and the special carriers in the organic semiconductor, which are polarons and bipolarons, are also discussed. -- Research highlights: → Current polarization in ferromagnetic/organic semiconductor structure is obtained. → Calculations are based on spin-drift-diffusion theory and Ohm's law. → Current polarization is enhanced by tuning magnetic induction and electric fields. → Effects of interfacial resistances and the special carriers are also discussed.

  9. Electric control of antiferromagnets

    OpenAIRE

    Fina, I.; Marti, X.

    2016-01-01

    In the past five years, most of the paradigmatic concepts employed in spintronics have been replicated substituting ferromagnets by antiferromagnets in critical parts of the devices. The numerous research efforts directed to manipulate and probe the magnetic moments in antiferromagnets have been gradually established a new and independent field known as antiferromagnetic spintronics. In this paper, we focus on the electrical control and detection of antiferromagnetic moments at a constant tem...

  10. Nonlinear dynamics of semiconductors in strong THz electric fields

    DEFF Research Database (Denmark)

    Tarekegne, Abebe Tilahun

    In this thesis, we investigate nonlinear interactions of an intense terahertz (THz) field with semiconductors, in particular the technologically relevant materials silicon and silicon carbide. We reveal the time-resolved dynamics of the nonlinear processes by pump-probe experiments that involve...

  11. Controlling Electrical Hazards

    National Research Council Canada - National Science Library

    1997-01-01

    ...). In general, OSHA's electrical standards are based on the National Fire Protection Associations Standard NFPA 70E, Electrical Safety Requirements for Employee Workplaces, and in turn, from the National Electrical Code (NEC...

  12. Electric vehicle battery charging controller

    DEFF Research Database (Denmark)

    2016-01-01

    The present invention provides an electric vehicle charging controller. The charging controller comprises a first interface connectable to an electric vehicle charge source for receiving a charging current, a second interface connectable to an electric vehicle for providing the charging current...... to a battery management system in the electric vehicle to charge a battery therein, a first communication unit for receiving a charging message via a communication network, and a control unit for controlling a charging current provided from the charge source to the electric vehicle, the controlling at least...... in part being performed in response to a first information associated with a charging message received by the first communication unit...

  13. Evaluation of semiconductor devices for Electric and Hybrid Vehicle (EHV) ac-drive applications, volume 1

    Science.gov (United States)

    Lee, F. C.; Chen, D. Y.; Jovanovic, M.; Hopkins, D. C.

    1985-01-01

    The results of evaluation of power semiconductor devices for electric hybrid vehicle ac drive applications are summarized. Three types of power devices are evaluated in the effort: high power bipolar or Darlington transistors, power MOSFETs, and asymmetric silicon control rectifiers (ASCR). The Bipolar transistors, including discrete device and Darlington devices, range from 100 A to 400 A and from 400 V to 900 V. These devices are currently used as key switching elements inverters for ac motor drive applications. Power MOSFETs, on the other hand, are much smaller in current rating. For the 400 V device, the current rating is limited to 25 A. For the main drive of an electric vehicle, device paralleling is normally needed to achieve practical power level. For other electric vehicle (EV) related applications such as battery charger circuit, however, MOSFET is advantageous to other devices because of drive circuit simplicity and high frequency capability. Asymmetrical SCR is basically a SCR device and needs commutation circuit for turn off. However, the device poses several advantages, i.e., low conduction drop and low cost.

  14. Electrical characterization of organic-on-inorganic semiconductor Schottky structures

    International Nuclear Information System (INIS)

    Guellue, Oe; Tueruet, A; Asubay, S

    2008-01-01

    We prepared a methyl red/p-InP organic-inorganic (OI) Schottky device formed by evaporation of an organic compound solution directly to a p-InP semiconductor wafer. The value of the optical band gap energy of the methyl red organic film on a glass substrate was obtained as 2.0 eV. It was seen that the Al/methyl red/p-InP contacts showed a good rectifying behavior. An ideality factor of 2.02 and a barrier height (Φ b ) of 1.11 eV for the Al/methyl red/p-InP contact were determined from the forward bias I-V characteristics. It was seen that the value of 1.11 eV obtained for Φ b for the Al/methyl red/p-InP contact was significantly larger than the value of 0.83 eV for conventional Al/p-InP Schottky diodes. Modification of the interfacial potential barrier for the Al/p-InP diode was achieved using a thin interlayer of the methyl red organic semiconductor. This ascribed to the fact that the methyl red interlayer increases the effective Φ b by influencing the space charge region of InP

  15. Metrology-based control and profitability in the semiconductor industry

    Science.gov (United States)

    Weber, Charles

    2001-06-01

    This paper summarizes three studies of the semiconductor industry conducted at SEMATECH and MIT's Sloan School of Management. In conjunction they lead to the conclusion that rapid problem solving is an essential component of profitability in the semiconductor industry, and that metrology-based control is instrumental to rapid problem solving. The studies also identify the need for defect attribution. Once a source of a defect has been identified, the appropriate resources--human and technological--need to be brought into the physically optimal location for corrective action. The Internet is likely to enable effective defect attribution by inducing collaboration between different companies.

  16. Spin Coulomb Dragging Inhibition of Spin-Polarized Electric Current Injecting into Organic Semiconductors

    International Nuclear Information System (INIS)

    Jun-Qing, Zhao; Shi-Zhu, Qiao; Zhen-Feng, Jia; Ning-Yu, Zhang; Yan-Ju, Ji; Yan-Tao, Pang; Ying, Chen; Gang, Fu

    2008-01-01

    We introduce a one-dimensional spin injection structure comprising a ferromagnetic metal and a nondegenerate organic semiconductor to model electric current polarizations. With this model we analyse spin Coulomb dragging (SCD) effects on the polarization under various electric fields, interface and conductivity conditions. The results show that the SCD inhibits the current polarization. Thus the SCD inhibition should be well considered for accurate evaluation of current polarization in the design of organic spin devices

  17. First-principles calculation of electric field gradients in metals, semiconductors, and insulators

    Energy Technology Data Exchange (ETDEWEB)

    Zwanziger, J.W. [Dalhousie Univ, Dept Chem, Halifax, NS (Canada); Dalhousie Univ, Inst Res Mat, Halifax, NS (Canada); Torrent, M. [CEA Bruyeres-le-Chatel, Dept Phys Theor and Appl, Bruyeres 91 (France)

    2008-07-01

    A scheme for computing electric field gradients within the projector augmented wave (PAW) formalism of density functional theory is presented. On the basis of earlier work (M. Profeta, F. Mauri, C.J. Pickard, J. Am. Chem. Soc. 125, 541, 2003) the present implementation handles metallic cases as well as insulators and semiconductors with equal efficiency. Details of the implementation, as well as applications and the discussion of the limitations of the PAW method for computing electric field gradients are presented. (authors)

  18. Charge transport in electrically doped amorphous organic semiconductors.

    Science.gov (United States)

    Yoo, Seung-Jun; Kim, Jang-Joo

    2015-06-01

    This article reviews recent progress on charge generation by doping and its influence on the carrier mobility in organic semiconductors (OSs). The doping induced charge generation efficiency is generally low in OSs which was explained by the integer charge transfer model and the hybrid charge transfer model. The ionized dopants formed by charge transfer between hosts and dopants can act as Coulomb traps for mobile charges, and the presence of Coulomb traps in OSs broadens the density of states (DOS) in doped organic films. The Coulomb traps strongly reduce the carrier hopping rate and thereby change the carrier mobility, which was confirmed by experiments in recent years. In order to fully understand the doping mechanism in OSs, further quantitative and systematic analyses of charge transport characteristics must be accomplished. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Piezo-voltage control of magnetization orientation in a ferromagnetic semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Althammer, M.; Brandlmaier, A.; Gepraegs, S.; Opel, M.; Gross, R. [Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, 85748 Garching (Germany); Bihler, C.; Brandt, M.S. [Walter Schottky Institut, Technische Universitaet Muenchen, 85748 Garching (Germany); Schoch, W.; Limmer, W. [Institut fuer Halbleiterphysik, Universitaet Ulm, 89069 Ulm (Germany); Goennenwein, S.T.B.

    2008-06-15

    The possibility to control magnetic properties via electrical fields is investigated in a piezoelectric actuator/ferromagnetic semiconductor thin film hybrid structure. Using anisotropic magnetoresistance techniques, the magnetic anisotropy and the magnetization orientation within the plane of the ferromagnetic film are measured quantitatively. The experiments reveal that the application of an electrical field to the piezoelectric actuator allows to continuously and reversibly rotate the magnetization orientation in the ferromagnet by about 70 . (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Development of the power control system for semiconductor lasers

    International Nuclear Information System (INIS)

    Kim, Kwang Suk; Kim, Cheol Jung

    1997-12-01

    For the first year plan of this program, we developed the power control system for semiconductor lasers. We applied the high-current switching mode techniques to fabricating a power control system. Then, we investigated the direct side pumping techniques with GaA1As diode laser bars to laser crystal without pumping optics. We obtained 0.5W average output power from this DPSSL. (author). 54 refs., 3 tabs., 18 figs

  1. Electrical detection of spin current and spin relaxation in nonmagnetic semiconductors

    International Nuclear Information System (INIS)

    Miah, M Idrish

    2008-01-01

    We report an electrical method for the detection of spin current and spin relaxation in nonmagnetic semiconductors. Optically polarized spins are dragged by an electric field in GaAs. We use the anomalous Hall effect for the detection of spin current and spin relaxation. It is found that the effect depends on the electric field and doping density as well as on temperature, but not on the excitation power. A calculation for the effect is performed using the measured spin polarization by a pump-probe experiment. The results are also discussed in comparison with a quantitative evaluation of the spin lifetimes of the photogenerated electrons under drift in GaAs

  2. Electrical detection of spin current and spin relaxation in nonmagnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Miah, M Idrish [Nanoscale Science and Technology Centre and School of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)], E-mail: m.miah@griffith.edu.au

    2008-09-21

    We report an electrical method for the detection of spin current and spin relaxation in nonmagnetic semiconductors. Optically polarized spins are dragged by an electric field in GaAs. We use the anomalous Hall effect for the detection of spin current and spin relaxation. It is found that the effect depends on the electric field and doping density as well as on temperature, but not on the excitation power. A calculation for the effect is performed using the measured spin polarization by a pump-probe experiment. The results are also discussed in comparison with a quantitative evaluation of the spin lifetimes of the photogenerated electrons under drift in GaAs.

  3. Controlling semiconductor nanoparticle size distributions with tailored ultrashort pulses

    International Nuclear Information System (INIS)

    Hergenroeder, R; Miclea, M; Hommes, V

    2006-01-01

    The laser generation of size-controlled semiconductor nanoparticle formation under gas phase conditions is investigated. It is shown that the size distribution can be changed if picosecond pulse sequences of tailored ultra short laser pulses (<200 fs) are employed. By delivering the laser energy in small packages, a temporal energy flux control at the target surface is achieved, which results in the control of the thermodynamic pathway the material takes. The concept is tested with silicon and germanium, both materials with a predictable response to double pulse sequences, which allows deduction of the materials' response to complicated pulse sequences. An automatic, adaptive learning algorithm was employed to demonstrate a future strategy that enables the definition of more complex optimization targets such as particle size on materials less predictable than semiconductors

  4. Electrical characterisation of semiconductor structures using AFM techniques

    International Nuclear Information System (INIS)

    Kovac jr, J.; Kovac, J.; Hotovy, J.; Novotny, I.; Skriniarova, J.; Dutkova, E.; Balaz, P.

    2011-01-01

    The microscopic dimensions appear to be a fundamental limitation to many common measurement techniques. The use of Current-Atomic Force Microscopy (I-AFM) bids a possibility to acquire topography image along with the current flow mappings which can be lapped over in resulting image as presented in this paper. A current distribution on the ZnO surface of p-Si/n- ZnO diode structure with CdS or ZnS nanocrystalline quantum dot clusters at the interface has been measured. The resulting images show a conductivity mapping different from topography what induces a conductive channels at the edges of the ZnO grains. We have successfully used I-AFM method where conductive AFM tip is scanning over the surface of the sample to create a topography image along with a current flow mapping of p-Si substrate covered with CdS or ZnS nanocrystalline clusters overlapped by 100 nm thick n-ZnO layer. The measured current mappings of both samples revealed a formation of conductive channels between the clusters of quantum dots when the sample is forward biased. We are able to create 3D topography images of combined with the forward biased current mapping textures which gives complex information about local conductivity and using this method it should be possible to find hidden current leaks in the samples for example defects in most semiconductor materials. A drift current generated in p-n junction was recorded when the sample was reverse biased while the sample has been exposed to light. Possible UV light source should cause a higher reverse current due to high bandgap of ZnS clusters which is a motivation to further research. The devices fabricated from these structures have the potential applications for solar cells or broadband photodetectors. (authors)

  5. New technology for the control of narrow-gap semiconductors

    International Nuclear Information System (INIS)

    Antoniou, I.; Bozhevolnov, V.; Melnikov, Yu.; Yafyasov, A.

    2003-01-01

    We present the results of the year work in the frame of the EU ESPRIT Project 28890 NTCONGS 'New technology for the control of narrow-gap semiconductors'. This work has involved both theoretical and experimental study, as well as the development of new specific equipment, towards the creation of a new generation of nanoelectronic devices able to operate at 77 K and even at room temperature

  6. Quantum-size-controlled photoelectrochemical etching of semiconductor nanostructures

    Science.gov (United States)

    Fischer, Arthur J.; Tsao, Jeffrey Y.; Wierer, Jr., Jonathan J.; Xiao, Xiaoyin; Wang, George T.

    2016-03-01

    Quantum-size-controlled photoelectrochemical (QSC-PEC) etching provides a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10-nm size regime. For example, quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength.

  7. First-principles study of anharmonic phonon effects in tetrahedral semiconductors via an external electric field

    Energy Technology Data Exchange (ETDEWEB)

    Dabiri, Zohreh, E-mail: z.dabiri@stu.yazd.ac.ir [Physics Department, Yazd University, P.O. Box 89195-741, Yazd (Iran, Islamic Republic of); Kazempour, Ali [Department of Physics, Payame Noor University, P.O. BOX 119395-3697, Tehran (Iran, Islamic Republic of); Nano Structured Coatings Institute of Yazd Payame Noor University, P.O. Code 89431-74559, Yazd (Iran, Islamic Republic of); Sadeghzadeh, Mohammad Ali [Physics Department, Yazd University, P.O. Box 89195-741, Yazd (Iran, Islamic Republic of)

    2016-11-15

    The strength of phonon anharmonicity is investigated in the framework of the Density Functional Perturbation Theory via an applied constant electric field. In contrast to routine approaches, we have employed the electric field as an effective probe to quest after the quasi-harmonic and anharmonic effects. Two typical tetrahedral semiconductors (diamond and silicon) have been selected to test the efficiency of this approach. In this scheme the applied field is responsible for establishing the perturbation and also inducing the anharmonicity in systems. The induced polarization is a result of changing the electronic density while ions are located at their ground state coordinates or at a specified strain. Employing this method, physical quantities of the semiconductors are calculated in presence of the electron–phonon interaction directly and, phonon–phonon interaction, indirectly. The present approach, which is in good agreement with previous theoretical and experimental studies, can be introduced as a benchmark to simply investigate the anharmonicity and pertinent consequences in materials.

  8. Passivation of electrically active centers by Hydrogen and Lithium in Semiconductors

    CERN Multimedia

    2002-01-01

    The hyperfine technique of Perturbed Angular Correlation Spectroscopy (PAC) has proven to be excellently suited for the microscopic investigation of impurity complexes in semiconductors. But this method is seriously limited by the small number of chemically different isotopes which are suitable for PAC measurements and represent electrically active centers in semiconductors. This bottleneck can be widely overcome by the ISOLDE facility which provides a great variety of shortliving PAC isotopes. The probe atom $^{111m}$Cd, provided by ISOLDE opened the first successful access to PAC investigations of III-V compounds and enabled also the first PAC experiments on double acceptors in silicon and germamum. \\\\ \\\\ At the new ISOLDE facility our experiments were concentrated on the passivation of electrically active centres by hydrogen and lithium in Si, Ge and III-V compounds. Experiments on $^{111m}$Cd in Ge revealed the formation of two different acceptor hydrogen and two different acceptor lithium complexes respe...

  9. Electric vehicle speed control

    Energy Technology Data Exchange (ETDEWEB)

    Krueger, W.R.; Mc Auliffe, G.N.; Schlageter, G.A.

    1987-06-23

    This patent describes an electric vehicle driven by a DC motor. The vehicle has a field winding, an electric resistance element in circuit with the field winding, a switch in the circuit operative when closed to place. The element in parallel with the field winding weakens the field and increases potential motor speed. Also are relay means for operating the switch, means to determine motor speed, computer means for determining whether the motor speed is increasing or decreasing, and means for operating the relay means to close the switch at a first speed. If the motor speed is increased, it actuates the switch at a second speed lower than the first speed but only if switch has been closed previously and motor speed is decreasing.

  10. Electrical addressing and temporal tweezing of localized pulses in passively mode-locked semiconductor lasers

    Science.gov (United States)

    Javaloyes, J.; Camelin, P.; Marconi, M.; Giudici, M.

    2017-08-01

    This work presents an overview of a combined experimental and theoretical analysis on the manipulation of temporal localized structures (LSs) found in passively Vertical-Cavity Surface-Emitting Lasers coupled to resonant saturable absorber mirrors. We show that the pumping current is a convenient parameter for manipulating the temporal Localized Structures, also called localized pulses. While short electrical pulses can be used for writing and erasing individual LSs, we demonstrate that a current modulation introduces a temporally evolving parameter landscape allowing to control the position and the dynamics of LSs. We show that the localized pulses drifting speed in this landscape depends almost exclusively on the local parameter value instead of depending on the landscape gradient, as shown in quasi-instantaneous media. This experimental observation is theoretically explained by the causal response time of the semiconductor carriers that occurs on an finite timescale and breaks the parity invariance along the cavity, thus leading to a new paradigm for temporal tweezing of localized pulses. Different modulation waveforms are applied for describing exhaustively this paradigm. Starting from a generic model of passive mode-locking based upon delay differential equations, we deduce the effective equations of motion for these LSs in a time-dependent current landscape.

  11. Semiconductor Quantum Dots for Applications to Advanced Concepts for Solar Photon Conversion to Electricity and Solar Fuels

    Energy Technology Data Exchange (ETDEWEB)

    Nozik, Arthur J [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Beard, Matthew C [National Renewable Energy Laboratory (NREL), Golden, CO (United States)

    2017-11-06

    The challenge of photoconversion research is to produce photovoltaic electricity at costs much less than those based on fossil fuels. Novel photoactive semiconductors and molecules of various types and structures are discussed for this purpose.

  12. Role of band states and trap states in the electrical properties of organic semiconductors: Hopping versus mobility edge model

    KAUST Repository

    Mehraeen, Shafigh; Coropceanu, Veaceslav; Bré das, Jean-Luc

    2013-01-01

    We compare the merits of a hopping model and a mobility edge model in the description of the effect of charge-carrier concentration on the electrical conductivity, carrier mobility, and Fermi energy of organic semiconductors. We consider the case

  13. Kinetic model for electric-field induced point defect redistribution near semiconductor surfaces

    Science.gov (United States)

    Gorai, Prashun; Seebauer, Edmund G.

    2014-07-01

    The spatial distribution of point defects near semiconductor surfaces affects the efficiency of devices. Near-surface band bending generates electric fields that influence the spatial redistribution of charged mobile defects that exchange infrequently with the lattice, as recently demonstrated for pile-up of isotopic oxygen near rutile TiO2 (110). The present work derives a mathematical model to describe such redistribution and establishes its temporal dependence on defect injection rate and band bending. The model shows that band bending of only a few meV induces significant redistribution, and that the direction of the electric field governs formation of either a valley or a pile-up.

  14. Kinetic model for electric-field induced point defect redistribution near semiconductor surfaces

    International Nuclear Information System (INIS)

    Gorai, Prashun; Seebauer, Edmund G.

    2014-01-01

    The spatial distribution of point defects near semiconductor surfaces affects the efficiency of devices. Near-surface band bending generates electric fields that influence the spatial redistribution of charged mobile defects that exchange infrequently with the lattice, as recently demonstrated for pile-up of isotopic oxygen near rutile TiO 2 (110). The present work derives a mathematical model to describe such redistribution and establishes its temporal dependence on defect injection rate and band bending. The model shows that band bending of only a few meV induces significant redistribution, and that the direction of the electric field governs formation of either a valley or a pile-up.

  15. Optical generation and control of quantum coherence in semiconductor nanostructures

    CERN Document Server

    Slavcheva, Gabriela

    2010-01-01

    The unprecedented control of coherence that can be exercised in quantum optics of atoms and molecules has stimulated increasing efforts in extending it to solid-state systems. One motivation to exploit the coherent phenomena comes from the emergence of the quantum information paradigm, however many more potential device applications ranging from novel lasers to spintronics are all bound up with issues in coherence. The book focuses on recent advances in the optical control of coherence in excitonic and polaritonic systems as model systems for the complex semiconductor dynamics towards the goal

  16. Semiconductors enable efficient solutions in electric vehicles; Halbleiter ermoeglichen effiziente Loesungen in Elektrofahrzeugen

    Energy Technology Data Exchange (ETDEWEB)

    Adlkofer, Hans [Infineon Technologies AG, Muenchen (Germany)

    2010-07-01

    The automotive industry currently enters a new phase of the competition. The successful addressing of vehicles with electric motors is in the focus of he competition. Electric vehicles which save the electrical energy in batteries may not replace immediately all fuel-powered vehicles in the given transport infrastructure. The semiconductor industry needs to provide solutions and technologies in order to increase the efficiency of electric vehicles and further to reduce the operating costs. Thus, the author of the contribution under consideration reports on possible ways to this target using a battery balancing system considering the amortization of such a system. The presented active battery cell management system may monitor the charging and discharging of the battery by means of a software monitor so that an energy recovery system is supported optimally. It ensures a reliable operation, prevents accidental premature battery failure and enables cost savings of about 10 % for the whole set of batteries.

  17. Automatic control in multidrive electrotechnical complexes with semiconductor converters

    Science.gov (United States)

    Vasilev, B. U.; Mardashov, D. V.

    2017-01-01

    The frequency convertor and the automatic control system, which can be used in the multi-drive electromechanical system with a few induction motions, are considered. The paper presents the structure of existing modern multi-drive electric drives inverters, namely, electric drives with a total frequency converter and few electric motions, and an electric drive, in which the converter is used for power supply and control of the independent frequency. It was shown that such technical solutions of frequency converters possess a number of drawbacks. The drawbacks are given. It was shown that the control of technological processes using the electric drive of this structure may be provided under very limited conditions, as the energy efficiency and the level of electromagnetic compatibility of electric drives is low. The authors proposed using a multi-inverter structure with an active rectifier in multidrive electric drives with induction motors frequency converters. The application of such frequency converter may solve the problem of electromagnetic compatibility, namely, consumption of sinusoidal currents from the network and the maintenance of a sinusoidal voltage and energy compatibility, namely, consumption of practically active energy from the network. Also, the paper proposes the use of the automatic control system, which by means of a multi-inverter frequency converter provides separate control of drive machines and flexible regulation of technological processes. The authors present oscillograms, which confirm the described characteristics of the developed electrical drive. The possible subsequent ways to improve the multi-motor drives are also described.

  18. Control of polarization and dipole moment in low-dimensional semiconductor nanostructures

    International Nuclear Information System (INIS)

    Li, L. H.; Ridha, P.; Mexis, M.; Smowton, P. M.; Blood, P.; Bozkurt, M.; Koenraad, P. M.; Patriarche, G.; Fiore, A.

    2009-01-01

    We demonstrate the control of polarization and dipole moment in semiconductor nanostructures, through nanoscale engineering of shape and composition. Rodlike nanostructures, elongated along the growth direction, are obtained by molecular beam epitaxial growth. By varying the aspect ratio and compositional contrast between the rod and the surrounding matrix, we rotate the polarization of the dominant interband transition from transverse-electric to transverse-magnetic, and modify the dipole moment producing a radical change in the voltage dependence of absorption spectra. This opens the way to the optimization of quantum dot amplifiers and electro-optical modulators.

  19. Slowing down and stretching DNA with an electrically tunable nanopore in a p–n semiconductor membrane

    International Nuclear Information System (INIS)

    Melnikov, Dmitriy V; Gracheva, Maria E; Leburton, Jean-Pierre

    2012-01-01

    We have studied single-stranded DNA translocation through a semiconductor membrane consisting of doped p and n layers of Si forming a p–n-junction. Using Brownian dynamics simulations of the biomolecule in the self-consistent membrane–electrolyte potential obtained from the Poisson–Nernst–Planck model, we show that while polymer length is extended more than when its motion is constricted only by the physical confinement of the nanopore. The biomolecule elongation is particularly dramatic on the n-side of the membrane where the lateral membrane electric field restricts (focuses) the biomolecule motion more than on the p-side. The latter effect makes our membrane a solid-state analog of the α-hemolysin biochannel. The results indicate that the tunable local electric field inside the membrane can effectively control dynamics of a DNA in the channel to either momentarily trap, slow down or allow the biomolecule to translocate at will. (paper)

  20. Charge collection efficiency in a semiconductor radiation detector with a non-constant electric field

    International Nuclear Information System (INIS)

    Shah, K.S.; Lund, J.C.; Olschner, F.

    1990-01-01

    The development of improved semiconductor radiation detectors would be facilitated by a quantitative model that predicts the performance of these detectors as a function of material characteristics and device operating parameters. An accurate prediction of the pulse height spectrum from a radiation detector can be made if both the noise and the charge collection properties of the detector are understood. The noise characteristics of semiconductor radiation detectors have been extensively studied. The effect of noise can be closely simulated by convoluting the noise-free pulse height spectrum with a Gaussian function. Distortion of semiconductor detector's pulse height spectrum from charge collection effects is more complex than the effects of noise and is more difficult to predict. To compute these distortions it is necessary to know how the charge collection efficiency η varies as a function of position within the detector x. These effects are shown. This problem has been previously solved for planar detectors with a constant electric field, for the case of spherical detectors, and for coaxial detectors. In this paper the authors describe a more general solution to the charge collection problem which includes the case of a non-constant electric field in a planar geometry

  1. Semiconductor spintronics

    International Nuclear Information System (INIS)

    Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

    2007-01-01

    Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

  2. Electric-field gradients at Ta donor impurities in Cr2O3(Ta) semiconductor

    International Nuclear Information System (INIS)

    Darriba, G.N.; Errico, L.A.; Munoz, E.L; Richard, D.; Eversheim, P.D.; Renteria, M.

    2009-01-01

    We report perturbed-angular-correlation (PAC) experiments on 181 Hf(→ 181 Ta)-implanted corundum Cr 2 O 3 powder samples in order to determine the magnitude and symmetry of the electric-field gradient (EFG) tensor at Ta donor impurity sites of this semiconductor. These results are analyzed in the framework of ab initio full-potential augmented-plane wave plus local orbitals (FP-APW+lo) calculations. The results are also compared with EFG results coming from PAC experiments in isomorphous α-Al 2 O 3 and α-Fe 2 O 3 doped with 111 In→ 111 Cd and 181 Hf→ 181 Ta tracers. This combined analysis enables us to quantify the magnitude of the lattice relaxations induced by the presence of the impurity and to determine the charge state of the impurity donor level introduced by Ta in the band gap of the semiconductor.

  3. Vehicle electrical system state controller

    Science.gov (United States)

    Bissontz, Jay E.

    2017-10-17

    A motor vehicle electrical power distribution system includes a plurality of distribution sub-systems, an electrical power storage sub-system and a plurality of switching devices for selective connection of elements of and loads on the power distribution system to the electrical power storage sub-system. A state transition initiator provides inputs to control system operation of switching devices to change the states of the power distribution system. The state transition initiator has a plurality of positions selection of which can initiate a state transition. The state transition initiator can emulate a four position rotary ignition switch. Fail safe power cutoff switches provide high voltage switching device protection.

  4. Cut Electric Bills by Controlling Demand

    Science.gov (United States)

    Grumman, David L.

    1974-01-01

    Electric bills can be reduced by lowering electric consumption and by controlling demand -- the amount of electricity used at a certain point in time. Gives tips to help reduce electric demand at peak power periods. (Author/DN)

  5. System and method of modulating electrical signals using photoconductive wide bandgap semiconductors as variable resistors

    Science.gov (United States)

    Harris, John Richardson; Caporaso, George J; Sampayan, Stephen E

    2013-10-22

    A system and method for producing modulated electrical signals. The system uses a variable resistor having a photoconductive wide bandgap semiconductor material construction whose conduction response to changes in amplitude of incident radiation is substantially linear throughout a non-saturation region to enable operation in non-avalanche mode. The system also includes a modulated radiation source, such as a modulated laser, for producing amplitude-modulated radiation with which to direct upon the variable resistor and modulate its conduction response. A voltage source and an output port, are both operably connected to the variable resistor so that an electrical signal may be produced at the output port by way of the variable resistor, either generated by activation of the variable resistor or propagating through the variable resistor. In this manner, the electrical signal is modulated by the variable resistor so as to have a waveform substantially similar to the amplitude-modulated radiation.

  6. Semiconductor plasmonic crystals : active control of THz extinction

    NARCIS (Netherlands)

    Schaafsma, M.C.; Gomez Rivas, J.

    2013-01-01

    We investigate theoretically the enhanced THz extinction by periodic arrays of semiconductor particles. Scattering particles of doped semiconductors can sustain localized surface plasmon polaritons, which can be diffractively coupled giving rise to surface lattice resonances. These resonances are

  7. Electric Circuit Model Analogy for Equilibrium Lattice Relaxation in Semiconductor Heterostructures

    Science.gov (United States)

    Kujofsa, Tedi; Ayers, John E.

    2018-01-01

    The design and analysis of semiconductor strained-layer device structures require an understanding of the equilibrium profiles of strain and dislocations associated with mismatched epitaxy. Although it has been shown that the equilibrium configuration for a general semiconductor strained-layer structure may be found numerically by energy minimization using an appropriate partitioning of the structure into sublayers, such an approach is computationally intense and non-intuitive. We have therefore developed a simple electric circuit model approach for the equilibrium analysis of these structures. In it, each sublayer of an epitaxial stack may be represented by an analogous circuit configuration involving an independent current source, a resistor, an independent voltage source, and an ideal diode. A multilayered structure may be built up by the connection of the appropriate number of these building blocks, and the node voltages in the analogous electric circuit correspond to the equilibrium strains in the original epitaxial structure. This enables analysis using widely accessible circuit simulators, and an intuitive understanding of electric circuits can easily be extended to the relaxation of strained-layer structures. Furthermore, the electrical circuit model may be extended to continuously-graded epitaxial layers by considering the limit as the individual sublayer thicknesses are diminished to zero. In this paper, we describe the mathematical foundation of the electrical circuit model, demonstrate its application to several representative structures involving In x Ga1- x As strained layers on GaAs (001) substrates, and develop its extension to continuously-graded layers. This extension allows the development of analytical expressions for the strain, misfit dislocation density, critical layer thickness and widths of misfit dislocation free zones for a continuously-graded layer having an arbitrary compositional profile. It is similar to the transition from circuit

  8. Electric field and substrate–induced modulation of spin-polarized transport in graphene nanoribbons on A3B5 semiconductors

    International Nuclear Information System (INIS)

    Ilyasov, Victor V.; Nguyen, Chuong V.; Ershov, Igor V.; Hieu, Nguyen N.

    2015-01-01

    In this work, we present the density functional theory calculations of the effect of an oriented electric field on the electronic structure and spin-polarized transport in a one dimensional (1D) zigzag graphene nanoribbon (ZGNR) channel placed on a wide bandgap semiconductor of the A3B5 type. Our calculations show that carrier mobility in the 1D semiconductor channel of the ZGNR/A3B5(0001) type is in the range from 1.7×10 4 to 30.5×10 4 cm 2 /Vs and can be controlled by an electric field. In particular, at the critical value of the positive potential, even though hole mobility in an one-dimensional 8-ZGNR/h-BN semiconductor channel for spin down electron subsystems is equal to zero, hole mobility can be increased to 4.1×10 5 cm 2 /Vs for spin up electron subsystems. We found that band gap and carrier mobility in a 1D semiconductor channel of the ZGNR/A3B5(0001) type depend strongly on an external electric field. With these extraordinary properties, ZGNR/A3B5(0001) can become a promising materials for application in nanospintronic devices

  9. High-throughput electrical characterization for robust overlay lithography control

    Science.gov (United States)

    Devender, Devender; Shen, Xumin; Duggan, Mark; Singh, Sunil; Rullan, Jonathan; Choo, Jae; Mehta, Sohan; Tang, Teck Jung; Reidy, Sean; Holt, Jonathan; Kim, Hyung Woo; Fox, Robert; Sohn, D. K.

    2017-03-01

    Realizing sensitive, high throughput and robust overlay measurement is a challenge in current 14nm and advanced upcoming nodes with transition to 300mm and upcoming 450mm semiconductor manufacturing, where slight deviation in overlay has significant impact on reliability and yield1). Exponentially increasing number of critical masks in multi-patterning lithoetch, litho-etch (LELE) and subsequent LELELE semiconductor processes require even tighter overlay specification2). Here, we discuss limitations of current image- and diffraction- based overlay measurement techniques to meet these stringent processing requirements due to sensitivity, throughput and low contrast3). We demonstrate a new electrical measurement based technique where resistance is measured for a macro with intentional misalignment between two layers. Overlay is quantified by a parabolic fitting model to resistance where minima and inflection points are extracted to characterize overlay control and process window, respectively. Analyses using transmission electron microscopy show good correlation between actual overlay performance and overlay obtained from fitting. Additionally, excellent correlation of overlay from electrical measurements to existing image- and diffraction- based techniques is found. We also discuss challenges of integrating electrical measurement based approach in semiconductor manufacturing from Back End of Line (BEOL) perspective. Our findings open up a new pathway for accessing simultaneous overlay as well as process window and margins from a robust, high throughput and electrical measurement approach.

  10. Evoked Electromyographically Controlled Electrical Stimulation

    Directory of Open Access Journals (Sweden)

    Mitsuhiro Hayashibe

    2016-07-01

    Full Text Available Time-variant muscle responses under electrical stimulation (ES are often problematic for all the applications of neuroprosthetic muscle control. This situation limits the range of ES usage in relevant areas, mainly due to muscle fatigue and also to changes in stimulation electrode contact conditions, especially in transcutaneous ES. Surface electrodes are still the most widely used in noninvasive applications.Electrical field variations caused by changes in the stimulation contact condition markedly affect the resulting total muscle activation levels. Fatigue phenomena under functional electrical stimulation (FES are also well known source of time-varying characteristics coming from muscle response under ES. Therefore it is essential to monitor the actual muscle state and assess the expected muscle response by ES so as to improve the current ES system in favour of adaptive muscle-response-aware FES control. To deal with this issue, we have been studying a novel control technique using evoked electromyography (eEMG signals to compensate for these muscle time-variances under ES for stable neuroprosthetic muscle control. In this perspective article, I overview the background of this topic and highlight important points to be aware of when using ES to induce the desired muscle activation regardless of the time-variance. I also demonstrate how to deal with the common critical problem of ES to move toward robust neuroprosthetic muscle control with the Evoked Electromyographically Controlled Electrical Stimulation paradigm.

  11. Effect of disorder and defects in ion-implanted semiconductors electrical and physiochemical characterization

    CERN Document Server

    Willardson, Robert K; Christofides, Constantinos; Ghibaudo, Gerard

    2014-01-01

    Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer afterhigh temperature annealing.Electrical and Physicochemical Characterization focuses on the physics of the annealing kine

  12. Digital control of electric drives

    CERN Document Server

    Koziol, R; Szklarski, L

    1992-01-01

    The electromechanical systems employed in different branches of industry are utilized most often as drives of working machines which must be fed with electric energy in a continuous, periodic or even discrete way. Some of these machines operate at constant speed, others require wide and varying energy control. In many designs the synchronous cooperation of several electric drives is required in addition to the desired dynamic properties. For these reasons the control of the cooperation and dynamics of electromechanical systems requires the use of computers.This book adopts an unusual approach

  13. Torque control for electric motors

    Science.gov (United States)

    Bernard, C. A.

    1980-01-01

    Method for adjusting electric-motor torque output to accomodate various loads utilizes phase-lock loop to control relay connected to starting circuit. As load is imposed, motor slows down, and phase lock is lost. Phase-lock signal triggers relay to power starting coil and generate additional torque. Once phase lock is recoverd, relay restores starting circuit to its normal operating mode.

  14. Electric vehicle motors and controllers

    Science.gov (United States)

    Secunde, R. R.

    1981-01-01

    Improved and advanced components being developed include electronically commutated permanent magnet motors of both drum and disk configuration, an unconventional brush commutated motor, and ac induction motors and various controllers. Test results on developmental motors, controllers, and combinations thereof indicate that efficiencies of 90% and higher for individual components, and 80% to 90% for motor/controller combinations can be obtained at rated power. The simplicity of the developmental motors and the potential for ultimately low cost electronics indicate that one or more of these approaches to electric vehicle propulsion may eventually displace presently used controllers and brush commutated dc motors.

  15. Jumping magneto-electric states of electrons in semiconductor multiple quantum wells

    International Nuclear Information System (INIS)

    Pfeffer, Pawel; Zawadzki, Wlodek

    2011-01-01

    Orbital and spin electron states in semiconductor multiple quantum wells in the presence of an external magnetic field transverse to the growth direction are considered. Rectangular wells of GaAs/GaAlAs and InAs/AlSb are taken as examples. It is shown that, in addition to magneto-electric states known from one-well systems, there appear magneto-electric states having a much stronger dependence of energies on a magnetic field and exhibiting an interesting anti-crossing behavior. The origin of these states is investigated and it is shown that the strong field dependence of the energies is related to an unusual 'jumping' behavior of their wavefunctions between quantum wells as the field increases. The ways of investigating the jumping states by means of interband magneto-luminescence transitions or intraband cyclotron-like transitions are considered and it is demonstrated that the jumping states can be observed. The spin g factors of electrons in the jumping states are calculated using the real values of the spin–orbit interaction and bands' nonparabolicity for the semiconductors in question. It is demonstrated that the jumping states offer a wide variety of the spin g factors

  16. A weakly coupled semiconductor superlattice as a harmonic hypersonic-electrical transducer

    International Nuclear Information System (INIS)

    Poyser, C L; Akimov, A V; Campion, R P; Kent, A J; Balanov, A G

    2015-01-01

    We study experimentally and theoretically the effects of high-frequency strain pulse trains on the charge transport in a weakly coupled semiconductor superlattice. In a frequency range of the order of 100 GHz such excitation may be considered as single harmonic hypersonic excitation. While travelling along the axis of the SL, the hypersonic acoustic wavepacket affects the electron tunnelling, and thus governs the electrical current through the device. We reveal how the change of current depends on the parameters of the hypersonic excitation and on the bias applied to the superlattice. We have found that the changes in the transport properties of the superlattices caused by the acoustic excitation can be largely explained using the current–voltage relation of the unperturbed system. Our experimental measurements show multiple peaks in the dependence of the transferred charge on the repetition rate of the strain pulses in the train. We demonstrate that these resonances can be understood in terms of the spectrum of the applied acoustic perturbation after taking into account the multiple reflections in the metal film serving as a generator of hypersonic excitation. Our findings suggest an application of the semiconductor superlattice as a hypersonic-electrical transducer, which can be used in various microwave devices. (paper)

  17. IMPULSE CONTROL HYBRID ELECTRICAL SYSTEM

    Directory of Open Access Journals (Sweden)

    A. A. Lobaty

    2016-01-01

    Full Text Available This paper extends the recently introduced approach for modeling and solving the optimal control problem of fixedswitched mode DC-DC power converter. DCDC converters are a class of electric power circuits that used extensively in regulated DC power supplies, DC motor drives of different types, in Photovoltaic Station energy conversion and other applications due to its advantageous features in terms of size, weight and reliable performance. The main problem in controlling this type converters is in their hybrid nature as the switched circuit topology entails different modes of operation, each of it with its own associated linear continuous-time dynamics.This paper analyses the modeling and controller synthesis of the fixed-frequency buck DC-DC converter, in which the transistor switch is operated by a pulse sequence with constant frequency. In this case the regulation of the DC component of the output voltage is via the duty cycle. The optimization of the control system is based on the formation of the control signal at the output.It is proposed to solve the problem of optimal control of a hybrid system based on the formation of the control signal at the output of the controller, which minimizes a given functional integral quality, which is regarded as a linear quadratic Letov-Kalman functional. Search method of optimal control depends on the type of mathematical model of control object. In this case, we consider a linear deterministic model of the control system, which is common for the majority of hybrid electrical systems. For this formulation of the optimal control problem of search is a problem of analytical design of optimal controller, which has the analytical solution.As an example of the hybrid system is considered a step-down switching DC-DC converter, which is widely used in various electrical systems: as an uninterruptible power supply, battery charger for electric vehicles, the inverter in solar photovoltaic power plants.. A

  18. Effect of electric field on the oscillator strength and cross-section for intersubband transition in a semiconductor quantum ring

    International Nuclear Information System (INIS)

    Bhattacharyya, S; Das, N R

    2012-01-01

    In this paper, we study the oscillator strength and cross-section for intersubband optical transition in an n-type semiconductor quantum ring of cylindrical symmetry in the presence of an electric field perpendicular to the plane of the ring. The analysis is done considering Kane-type band non-parabolicity of the semiconductor and assuming that the polarization of the incident radiation is along the axis of the ring. The results show that the oscillator strength decreases and the transition energy increases with the electric field. The assumption of a parabolic band leads to an overestimation of the oscillator strength. The effects of the electric field, band non-parabolicity and relaxation time on absorption cross-section for intersubband transition in a semiconductor quantum ring are also shown. (paper)

  19. Flexible distributed architecture for semiconductor process control and experimentation

    Science.gov (United States)

    Gower, Aaron E.; Boning, Duane S.; McIlrath, Michael B.

    1997-01-01

    Semiconductor fabrication requires an increasingly expensive and integrated set of tightly controlled processes, driving the need for a fabrication facility with fully computerized, networked processing equipment. We describe an integrated, open system architecture enabling distributed experimentation and process control for plasma etching. The system was developed at MIT's Microsystems Technology Laboratories and employs in-situ CCD interferometry based analysis in the sensor-feedback control of an Applied Materials Precision 5000 Plasma Etcher (AME5000). Our system supports accelerated, advanced research involving feedback control algorithms, and includes a distributed interface that utilizes the internet to make these fabrication capabilities available to remote users. The system architecture is both distributed and modular: specific implementation of any one task does not restrict the implementation of another. The low level architectural components include a host controller that communicates with the AME5000 equipment via SECS-II, and a host controller for the acquisition and analysis of the CCD sensor images. A cell controller (CC) manages communications between these equipment and sensor controllers. The CC is also responsible for process control decisions; algorithmic controllers may be integrated locally or via remote communications. Finally, a system server images connections from internet/intranet (web) based clients and uses a direct link with the CC to access the system. Each component communicates via a predefined set of TCP/IP socket based messages. This flexible architecture makes integration easier and more robust, and enables separate software components to run on the same or different computers independent of hardware or software platform.

  20. Intelligent electrical outlet for collective load control

    Science.gov (United States)

    Lentine, Anthony L.; Ford, Justin R.; Spires, Shannon V.; Goldsmith, Steven Y.

    2015-10-27

    Various technologies described herein pertain to an electrical outlet that autonomously manages loads in a microgrid. The electrical outlet can provide autonomous load control in response to variations in electrical power generation supply in the microgrid. The electrical outlet includes a receptacle, a sensor operably coupled to the receptacle, and an actuator configured to selectively actuate the receptacle. The sensor measures electrical parameters at the receptacle. Further, a processor autonomously controls the actuator based at least in part on the electrical parameters measured at the receptacle, electrical parameters from one or more disparate electrical outlets in the microgrid, and a supply of generated electric power in the microgrid at a given time.

  1. Pulsed laser deposition of semiconductor-ITO composite films on electric-field-applied substrates

    International Nuclear Information System (INIS)

    Narazaki, Aiko; Sato, Tadatake; Kawaguchi, Yoshizo; Niino, Hiroyuki; Yabe, Akira; Sasaki, Takeshi; Koshizaki, Naoto

    2002-01-01

    The DC electric-field effect on the crystallinity of II-VI semiconductor in composite systems has been investigated for CdS-ITO films fabricated via alternative pulsed laser deposition (PLD) of CdS and indium tin oxide (ITO) on electric-field-applied substrates. The alternative laser ablation was performed under irradiation of ArF excimer laser in mixture gas of helium and oxygen. The application of electric-field facilitated the preferential crystal-growth of CdS in nanometer scale at low pressure, whereas all the films grown without the field were amorphous. There is a large difference in the crystallization between the films grown on field-applied and heated substrates; the latter showed the crystal-growth with random orientations. This difference indicates that the existence of electric-field has an influence on the transformation from amorphous to crystalline phase of CdS. The driving force for the field-induced crystallization is also discussed in the light of the Joule heat

  2. Self-Aligned Growth of Organic Semiconductor Single Crystals by Electric Field.

    Science.gov (United States)

    Kotsuki, Kenji; Obata, Seiji; Saiki, Koichiro

    2016-01-19

    We proposed a novel but facile method for growing organic semiconductor single-crystals via solvent vapor annealing (SVA) under electric field. In the conventional SVA growth process, nuclei of crystals appeared anywhere on the substrate and their crystallographic axes were randomly distributed. We applied electric field during the SVA growth of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) on the SiO2/Si substrate on which a pair of electrodes had been deposited beforehand. Real-time observation of the SVA process revealed that rodlike single crystals grew with their long axes parallel to the electric field and bridged the prepatterned electrodes. As a result, C8-BTBT crystals automatically formed a field effect transistor (FET) structure and the mobility reached 1.9 cm(2)/(V s). Electric-field-assisted SVA proved a promising method for constructing high-mobility single-crystal FETs at the desired position by a low-cost solution process.

  3. Theoretical evaluation of maximum electric field approximation of direct band-to-band tunneling Kane model for low bandgap semiconductors

    Science.gov (United States)

    Dang Chien, Nguyen; Shih, Chun-Hsing; Hoa, Phu Chi; Minh, Nguyen Hong; Thi Thanh Hien, Duong; Nhung, Le Hong

    2016-06-01

    The two-band Kane model has been popularly used to calculate the band-to-band tunneling (BTBT) current in tunnel field-effect transistor (TFET) which is currently considered as a promising candidate for low power applications. This study theoretically clarifies the maximum electric field approximation (MEFA) of direct BTBT Kane model and evaluates its appropriateness for low bandgap semiconductors. By analysing the physical origin of each electric field term in the Kane model, it has been elucidated in the MEFA that the local electric field term must be remained while the nonlocal electric field terms are assigned by the maximum value of electric field at the tunnel junction. Mathematical investigations have showed that the MEFA is more appropriate for low bandgap semiconductors compared to high bandgap materials because of enhanced tunneling probability in low field regions. The appropriateness of the MEFA is very useful for practical uses in quickly estimating the direct BTBT current in low bandgap TFET devices.

  4. AutoCAD electrical 2013 for electrical control designers

    CERN Document Server

    Tickoo, Sham; CADCIM Technologies

    2013-01-01

    The AutoCAD Electrical 2013 for Electrical Control Designers textbook has been written to assist the engineering students and the practicing designers learn the application of various AutoCAD Electrical tools and options for creating electrical control designs. After reading this textbook, the users will be able to create professional electrical-control drawings easily and effectively. Moreover, the users will be able to automate various control engineering tasks such as building circuits, numbering wires, creating bills of materials, and many more. The textbook takes the users across a wide spectrum of electrical control drawings through progressive examples and numerous illustrations and exercises, thereby making it an ideal guide for both the novice and the advanced users. Salient Features of the Textbook Consists of 14 chapters that are organized in a pedagogical sequence covering various tools and features of AutoCAD Electrical such as schematic drawings, parametric and non-parametric PLC modules, Circu...

  5. Effect of surface states on electrical characteristic of metal - insulator - semiconductor (MIS) diodes

    International Nuclear Information System (INIS)

    Altindal, S.; Doekme, I.; Tataroglu, A.; Sahingoez, R.

    2002-01-01

    The current-voltage (I-V) characteristics of Metal-Insulator-Semiconductor (MIS) Schottky barrier diodes which is consider distribution of interface states in equilibrium with semiconductor were determined at two (low and high) temperature. The interface states were responsible for non-ideal behavior of the forward I-V characteristic of diodes. Both diodes (n and p type Si) showed non-ideal behavior with an ideality factor 1.6 and 1.85 respectively at room temperature. The higher values of n-type Si were attributed to an order of magnitude higher density of interface states in the both diodes. The effect of an interfacial insulator layer between the metal and semiconductor are also studied. The high density of interface states also caused a reduction in the barrier height of the MIS diode. It is shown that by using Norde function at low and high temperature, barrier height □ b , series resistance R s and ideality factor n can be determined even in the case 1 s obtained from Norde function strongly depend on temperature, and decrease with increasing temperature. In addition, the potential barrier height increases with increasing temperature. The mean density of interface states N ss decreases with increasing temperature. Particularly at low temperature the I-V characteristics are controlled by interface states density

  6. Quantum control and process tomography of a semiconductor quantum dot hybrid qubit.

    Science.gov (United States)

    Kim, Dohun; Shi, Zhan; Simmons, C B; Ward, D R; Prance, J R; Koh, Teck Seng; Gamble, John King; Savage, D E; Lagally, M G; Friesen, Mark; Coppersmith, S N; Eriksson, Mark A

    2014-07-03

    The similarities between gated quantum dots and the transistors in modern microelectronics--in fabrication methods, physical structure and voltage scales for manipulation--have led to great interest in the development of quantum bits (qubits) in semiconductor quantum dots. Although quantum dot spin qubits have demonstrated long coherence times, their manipulation is often slower than desired for important future applications, such as factoring. Furthermore, scalability and manufacturability are enhanced when qubits are as simple as possible. Previous work has increased the speed of spin qubit rotations by making use of integrated micromagnets, dynamic pumping of nuclear spins or the addition of a third quantum dot. Here we demonstrate a qubit that is a hybrid of spin and charge. It is simple, requiring neither nuclear-state preparation nor micromagnets. Unlike previous double-dot qubits, the hybrid qubit enables fast rotations about two axes of the Bloch sphere. We demonstrate full control on the Bloch sphere with π-rotation times of less than 100 picoseconds in two orthogonal directions, which is more than an order of magnitude faster than any other double-dot qubit. The speed arises from the qubit's charge-like characteristics, and its spin-like features result in resistance to decoherence over a wide range of gate voltages. We achieve full process tomography in our electrically controlled semiconductor quantum dot qubit, extracting high fidelities of 85 per cent for X rotations (transitions between qubit states) and 94 per cent for Z rotations (phase accumulation between qubit states).

  7. Coordinated control of electrical drives

    International Nuclear Information System (INIS)

    Keresztely, S.

    1983-01-01

    The control system developed for the fuel handling machine of nuclear power plants contains seven microcomputers. Redundant hardware and software structure ensures high reliability and availability. The sensors are doubled and each set is connected to its own microcomputer for evaluation of measurements. The control program, coordinating seven electrical drives, is run on two identical microcomputers, and has access to both sets of measurement results. Two control desks are provided. The seventh microcomputer generates the digital picture of the working site around the actual position and the picture is sent to color TV monitors at the control desks. System reliability: failure of any part of the system causes an error message and no action. System availability: for emergency purposes, one of every pair of the identical subsystems must be operational. In this emergency mode unconditional reliability is lost. (author)

  8. Development of a new technique of localised analysis of electrically active defects in semiconductors

    International Nuclear Information System (INIS)

    Heiser, T.

    1988-07-01

    An analysis technique derived from minority carrier transient spectroscopy (MCTS) was developed. By giving this technique spatial resolution via a focused optical beam, it is possible to exploit the high sensitivity and the spectroscopic nature of the technique to develop a method called scanning MCTS (SMCTS) which can be used to acquire information on lateral distribution of electrically active flaws in semiconductors or associated chemical impurities. The optimum conditions, corresponding to the maximum signal for the highest resolution, can be expressed by the value of a signal parameter. The transients system was digitized, considerably reducing background noise. In order to link the SMCTS to a given flaw, two methods for exploiting the transients are used. The method was verified in tests with artificial defects created by laser and on real cases, arising in industrial processes [fr

  9. Evaluation of electrical, structural, thermal and optical properties of Co_3O_4 semiconductor

    International Nuclear Information System (INIS)

    Dias, Jeferson A.; Maestrelli, Sylma C.; Morelli, Marcio R.

    2016-01-01

    Among the new semiconductors, the tricobalt tetraoxide is a material of increasing interest; nevertheless, there is a limited number of studies about its properties. Thus, this work has investigated the structural, thermal, optical and electronic properties of Co_3O_4 and its correlation with structure and microstructure. For that, the commercial material was characterized by X-ray diffraction, thermal analysis, diffuse reflectance, FTIR and impedance spectroscopy. The results have shown that the assessed Co_3O_4 has non-stoichiometric spinel structure, presenting a band gap energy capable to completely absorb the visible spectra (1.75 eV). Furthermore, it can be visualized in infrared spectra the bands related to Co-O bonds. The activation energy of electric conduction was 0.35 eV related to the hopping mechanism. Therefore, the results confirm the potentiality of use of Co_3O_4 in optoelectronic devices due to its promising properties for technological utilization. (author)

  10. A model of electric breakdown in polycrystalline semiconductors with highly nonlinear I - V characteristics

    International Nuclear Information System (INIS)

    Yildirim, E.H.; Tanatar, B.; Canessa, E.

    1993-07-01

    A deterministic algorithm to study the nonlinear current-voltage characteristics of polycrystalline semiconductors, such as ZnO-based metal oxide varistors, under dc bias and at room temperature is developed based on the electrical properties of individual grain boundaries. Assuming a thermionic emission type mechanism between individual grains and a nonuniform distribution of barrier heights at grain boundaries, the set of nonlinear Kirchhoff equations that determines the macroscopic current across the specimen and the nonlinearity coefficient α is solved numerically. The applied voltage dependence of the barrier height is found to be crucial to obtain α values reaching ∼50, indicating high nonlinearity as required by potential commercial applications. (author). 20 refs, 3 figs

  11. Electrical modeling of semiconductor bridge (SCB) BNCP detonators with electrochemical capacitor firing sets

    Energy Technology Data Exchange (ETDEWEB)

    Marx, K.D. [Sandia National Labs., Livermore, CA (United States); Ingersoll, D.; Bickes, R.W. Jr. [Sandia National Labs., Albuquerque, NM (United States)

    1998-11-01

    In this paper the authors describe computer models that simulate the electrical characteristics and hence, the firing characteristics and performance of a semiconductor bridge (SCB) detonator for the initiation of BNCP [tetraammine-cis-bis (5-nitro-2H-tetrazolato-N{sup 2}) cobalt(III) perchlorate]. The electrical data and resultant models provide new insights into the fundamental behavior of SCB detonators, particularly with respect to the initiation mechanism and the interaction of the explosive powder with the SCB. One model developed, the Thermal Feedback Model, considers the total energy budget for the system, including the time evolution of the energy delivered to the powder by the electrical circuit, as well as that released by the ignition and subsequent chemical reaction of the powder. The authors also present data obtained using a new low-voltage firing set which employed an advanced electrochemical capacitor having a nominal capacitance of 350,000 {micro}F at 9 V, the maximum voltage rating for this particular device. A model for this firing set and detonator was developed by making measurements of the intrinsic capacitance and equivalent series resistance (ESR < 10 m{Omega}) of a single device. This model was then used to predict the behavior of BNCP SCB detonators fired alone, as well as in a multishot, parallel-string configuration using a firing set composed of either a single 9 V electrochemical capacitor or two of the capacitors wired in series and charged to 18 V.

  12. Electrically controllable artificial PAN muscles

    Science.gov (United States)

    Salehpoor, Karim; Shahinpoor, Mohsen; Mojarrad, Mehran

    1996-02-01

    PAN muscles become electrically controllable and therefore the use of such artificial muscles in robotic structures and applications becomes more feasible. A muscle is designed such that it is exposed to either Na+ or Cl- ions effectively. Muscle contraction or expansion characteristics under the effect of the applied electric field are discussed.

  13. Experimental installation for excitation of semiconductors and dielectrics by picosecond pulsed electron beam and electric field

    International Nuclear Information System (INIS)

    Nasibov, A.S.; Berezhnoj, K.V.; Shapkin, P.V.; Reutova, A.G.; Shunajlov, S.A.; Yalandin, M.I.

    2009-01-01

    The experimental facility for shaping high-voltage pulses with amplitudes of 30-250 kV and durations of 100-500 ps and electron beams with a current density of up to 1000 A/cm -2 is described. The facility was built using the principle of energy compression of a pulse from a nanosecond high-voltage generator accompanied by the subsequent pulse sharpening and cutting. The setup is equipped with two test coaxial chambers for radiation excitation in semiconductor crystals by an electron beam or an electric field in air at atmospheric pressure and T = 300 K. Generation of laser radiation in the visible range under field and electron pumping was attained in ZnSSe, ZnSe, ZnCdS, and CdS (462, 480, 515, and 525 nm, respectively). Under the exposure to an electric field (up to 10 6 V x cm -1 ), the laser generation region is as large as 300-500 μm. The radiation divergence was within 5 Deg C. The maximum integral radiation power (6 kW at λ = 480 nm) was obtained under field pumping of a zinc selenide sample with a single dielectric mirror [ru

  14. Intelligent Combustion. A gas boiler with a new control and safety device using the signals of a semiconductor-sensor

    International Nuclear Information System (INIS)

    Rusche, S.; Kostrzewa, G.

    1999-01-01

    The present controls of small gas boilers use an actual differential pressure of the flowing air to regulate the gas valve. It is also possible to combine the change of the gas flow rate and the air volume mechanically. In both of these methods, it is neglected that the air volume required for complete combustion is strongly affected by changing gas quality. The article discusses the use of a BaSnO3 semiconductor control sensor, which is heated by the flame and changes electrical resistance with temperature, O2 and CO content in the burning chamber. It also describes a new burner concept using the sensor

  15. Electronic-state control of amino acids on semiconductor surfaces

    International Nuclear Information System (INIS)

    Oda, Masato; Nakayama, Takashi

    2005-01-01

    Electronic structures of amino acids on the Si(1 1 1) surfaces are investigated by using ab initio Hartree-Fock calculations. It is shown that among various polar amino acids, a histidine is the only one that can be positively ionized when hole carriers are supplied in the Si substrate, by transferring the hole charge from Si substrate to an amino acid. This result indicates that the ionization of a histidine, which will activate the protein functions, can be controlled electrically by producing amino acid/Si junctions

  16. Production planning and control for semiconductor wafer fabrication facilities modeling, analysis, and systems

    CERN Document Server

    Mönch, Lars; Mason, Scott J

    2012-01-01

    Over the last fifty-plus years, the increased complexity and speed of integrated circuits have radically changed our world. Today, semiconductor manufacturing is perhaps the most important segment of the global manufacturing sector. As the semiconductor industry has become more competitive, improving planning and control has become a key factor for business success. This book is devoted to production planning and control problems in semiconductor wafer fabrication facilities. It is the first book that takes a comprehensive look at the role of modeling, analysis, and related information systems

  17. Control of the Thermal Evaporation of Organic Semiconductors via Exact Linearization

    OpenAIRE

    Martin Steinberger; Martin Horn

    2011-01-01

    In this article, a high vacuum system for the evaporation of organic semiconductors is introduced and a mathematical model is given. Based on the exact input output linearization a deposition rate controller is designed and tested with different evaporation materials.

  18. Elucidation and control of electronic properties related to organic semiconductors

    International Nuclear Information System (INIS)

    Yamane, Hiroyuki; Ueno, Nobuo; Seki, Kazuhiko

    2009-01-01

    The electronic structure of organic solids and interfaces plays a crucial role in the performance of optoelectronic devices using organic semiconductors such as light-emitting diodes, field-effect transistors, and photovoltaic cells. The functionality of these organic devices is seriously dominated by the geometric structure, which varies depending on the molecular structure and the sample preparation condition. Due to the rapid progress in sample preparation methods and surface science techniques, we can now discuss in detail the correlation of the electronic structure with the geometric structure of organic solids, films, and interfaces. This paper reviews the recent progress of studies in the geometric and electronic structures related to organic semiconductors. (author)

  19. Controlling spontaneous emission dynamics in semiconductor micro cavities

    Science.gov (United States)

    Gayral, B.

    Spontaneous emission of light can be controlled, cavity quantum electrodynamics tells us, and many experiments in atomic physics demonstrated this fact. In particular, coupling an emitter to a resonant photon mode of a cavity can enhance its spontaneous emission rate: this is the so-called Purcell effect. Though appealing it might seem to implement these concepts for the benefit of light-emitting semiconductor devices, great care has to be taken as to which emitter/cavity system should be used. Semiconductor quantum boxes prove to be good candidates for witnessing the Purcell effect. Also, low volume cavities having a high optical quality in other words a long photon storage time are required. State-of-the-art fabrication techniques of such cavities are presented and discussed.We demonstrate spontaneous emission rate enhancement for InAs/GaAs quantum boxes in time-resolved and continuous-wave photoluminescence experiments. This is done for two kinds of cavities, namely GaAs/AlAs micropillars (global enhancement by a factor of 5), and GaAs microdisks (global enhancement by a factor of 20). Prospects for lasers, light-emitting diodes and single photon sources based on the Purcell effect are discussed. L'émission spontanée de lumière peut être contrôlée, ainsi que nous l'enseigne l'électrodynamique quantique en cavité, ce fait a été démontré expérimentalement en physique atomique. En particulier, coupler un émetteur à un mode photonique résonnant d'une cavité peut exalter son taux d'émission spontanée : c'est l'effet Purcell. Bien qu'il semble très prometteur de mettre en pratique ces concepts pour améliorer les dispositifs semi-conducteurs émetteurs de lumière, le choix du système émetteur/cavité est crucial. Nous montrons que les boîtes quantiques semi-conductrices sont des bons candidats pour observer l'effet Purcell. Il faut par ailleurs des cavités de faible volume ayant une grande qualité optique en d'autres mots un long temps de

  20. Energy Impacts of Wide Band Gap Semiconductors in U.S. Light-Duty Electric Vehicle Fleet.

    Science.gov (United States)

    Warren, Joshua A; Riddle, Matthew E; Graziano, Diane J; Das, Sujit; Upadhyayula, Venkata K K; Masanet, Eric; Cresko, Joe

    2015-09-01

    Silicon carbide and gallium nitride, two leading wide band gap semiconductors with significant potential in electric vehicle power electronics, are examined from a life cycle energy perspective and compared with incumbent silicon in U.S. light-duty electric vehicle fleet. Cradle-to-gate, silicon carbide is estimated to require more than twice the energy as silicon. However, the magnitude of vehicle use phase fuel savings potential is comparatively several orders of magnitude higher than the marginal increase in cradle-to-gate energy. Gallium nitride cradle-to-gate energy requirements are estimated to be similar to silicon, with use phase savings potential similar to or exceeding that of silicon carbide. Potential energy reductions in the United States vehicle fleet are examined through several scenarios that consider the market adoption potential of electric vehicles themselves, as well as the market adoption potential of wide band gap semiconductors in electric vehicles. For the 2015-2050 time frame, cumulative energy savings associated with the deployment of wide band gap semiconductors are estimated to range from 2-20 billion GJ depending on market adoption dynamics.

  1. Electric-field controlled ferromagnetism in MnGe magnetic quantum dots

    Directory of Open Access Journals (Sweden)

    Faxian Xiu

    2011-03-01

    Full Text Available Electric-field control of ferromagnetism in magnetic semiconductors at room temperature has been actively pursued as one of the important approaches to realize practical spintronics and non-volatile logic devices. While Mn-doped III-V semiconductors were considered as potential candidates for achieving this controllability, the search for an ideal material with high Curie temperature (Tc>300 K and controllable ferromagnetism at room temperature has continued for nearly a decade. Among various dilute magnetic semiconductors (DMSs, materials derived from group IV elements such as Si and Ge are the ideal candidates for such materials due to their excellent compatibility with the conventional complementary metal-oxide-semiconductor (CMOS technology. Here, we review recent reports on the development of high-Curie temperature Mn0.05Ge0.95 quantum dots (QDs and successfully demonstrate electric-field control of ferromagnetism in the Mn0.05Ge0.95 quantum dots up to 300 K. Upon the application of gate-bias to a metal-oxide-semiconductor (MOS capacitor, the ferromagnetism of the channel layer (i.e. the Mn0.05Ge0.95 quantum dots was modulated as a function of the hole concentration. Finally, a theoretical model based upon the formation of magnetic polarons has been proposed to explain the observed field controlled ferromagnetism.

  2. Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

    KAUST Repository

    Ghoneim, Mohamed T.

    2015-06-01

    We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard bulk mono-crystalline silicon substrate. A lifetime projection is extracted using statistical analysis of the ramping voltage (Vramp) breakdown and time dependent dielectric breakdown data. The obtained flexible MOSCAPs operational voltages satisfying the 10 years lifetime benchmark are compared to those of the control MOSCAPs, which are not peeled off from the silicon wafer. © 2014 IEEE.

  3. Structural and electrical characterisation of semiconductor materials using a nuclear microprobe

    International Nuclear Information System (INIS)

    Jamieson, D.N.

    1998-01-01

    The domain of high-resolution imaging techniques (sub-micron) traditionally belongs to low-energy ion beams (ke V ion microprobe), electrons (transmission or scanning electron microscopy), light (near field microscopy), or all variants of scanning probe microscopies. Now, nuclear techniques of analysis, with a nuclear microprobe, have entered this domain, bringing a range of unique techniques for making images. In addition to-conventional techniques like Rutherford (and non-Rutherford) backscattering spectrometry and particle induced x-ray emission for structural characterisation, new ion beam analysis techniques have been developed for electrical characterisation as well. Foremost of these new techniques is ion beam induced charge (IBIC) which has seen an explosion of applications in the last five years to the study of charge transport properties of a variety of materials including polycrystalline diamond and silicon. An additional novel technique is ionoluminescence, which may be used to image various electronic properties of the material. Presented here are some examples of these imaging techniques in a variety of semiconductor materials. In all these examples, the specimens display structural inhomogeneities on the scale of 10 micrometres, making it essential to employ a focused beam. (author)

  4. Structural and electrical characterisation of semiconductor materials using a nuclear microprobe

    Energy Technology Data Exchange (ETDEWEB)

    Jamieson, D.N. [Melbourne Univ., Parkville, VIC (Australia). School of Physics, Microanalytical Centre

    1998-06-01

    The domain of high-resolution imaging techniques (sub-micron) traditionally belongs to low-energy ion beams (ke V ion microprobe), electrons (transmission or scanning electron microscopy), light (near field microscopy), or all variants of scanning probe microscopies. Now, nuclear techniques of analysis, with a nuclear microprobe, have entered this domain, bringing a range of unique techniques for making images. In addition to-conventional techniques like Rutherford (and non-Rutherford) backscattering spectrometry and particle induced x-ray emission for structural characterisation, new ion beam analysis techniques have been developed for electrical characterisation as well. Foremost of these new techniques is ion beam induced charge (IBIC) which has seen an explosion of applications in the last five years to the study of charge transport properties of a variety of materials including polycrystalline diamond and silicon. An additional novel technique is ionoluminescence, which may be used to image various electronic properties of the material. Presented here are some examples of these imaging techniques in a variety of semiconductor materials. In all these examples, the specimens display structural inhomogeneities on the scale of 10 micrometres, making it essential to employ a focused beam. (author). Extended abstract. 18 refs. 4 figs.

  5. Features of the electric-field distribution in anisotropic semiconductor wafers in a transverse magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Filippov, V. V., E-mail: wwfilippow@mail.ru [Lipetsk State Pedagogical University (Russian Federation); Bormontov, E. N. [Voronezh State University (Russian Federation)

    2013-07-15

    A macroscopic model of the Hall effects and magnetoresistance in anisotropic semiconductor wafers is developed. The results obtained by solving the electrodynamic boundary problem allow the potential and eddy currents in anisotropic semiconductors to be calculated at different current-contact locations, depending on the parameters of the sample material's anisotropy. The results of this study are of great practical importance for investigating the physical properties of anisotropic semiconductors and simulating the electron-transport phenomena in devices based on anisotropic semiconductors.

  6. Features of the electric-field distribution in anisotropic semiconductor wafers in a transverse magnetic field

    International Nuclear Information System (INIS)

    Filippov, V. V.; Bormontov, E. N.

    2013-01-01

    A macroscopic model of the Hall effects and magnetoresistance in anisotropic semiconductor wafers is developed. The results obtained by solving the electrodynamic boundary problem allow the potential and eddy currents in anisotropic semiconductors to be calculated at different current-contact locations, depending on the parameters of the sample material’s anisotropy. The results of this study are of great practical importance for investigating the physical properties of anisotropic semiconductors and simulating the electron-transport phenomena in devices based on anisotropic semiconductors

  7. Reliable CPS design for mitigating semiconductor and battery aging in electric vehicles

    NARCIS (Netherlands)

    Chang, W.; Proebstl, A.; Goswami, D.; Zamani, M.; Chakraborty, S.

    2015-01-01

    Reliability and performance of cyber-physical systems (CPS) in electric vehicles (EVs) are influenced by three design aspects: (i) controller design, (ii) battery usage, i.e., Battery rate capacity and aging effects, (iii) processor aging of the in-vehicle embedded platform. In this paper, we

  8. Use of semiconductor detectors for radioactive waste account and control

    CERN Document Server

    Davydov, L N; Zakharchenko, A A

    2002-01-01

    The possibilities and development status of the contemporary semiconductor detectors and detecting devices intended for radiation monitoring at nuclear industry enterprises, including Chernobyl Shelter and depositories of nuclear wastes are shown. Such devices,created in the last years, can be successfully used for measurements of the gamma-radiation dose rate as well as for the isotope composition evaluation of nuclear materials and wastes, both during the work cycles and in emergency situations.

  9. Controlled growth of porous networks in phosphide semiconductors

    Czech Academy of Sciences Publication Activity Database

    Delimitis, A.; Komninou, Ph.; Kehagias, Th.; Pavlidou, E.; Karakostas, Th.; Gladkov, Petar; Nohavica, Dušan

    2008-01-01

    Roč. 15, č. 1 (2008), s. 75-81 ISSN 1380-2224 R&D Projects: GA ČR(CZ) GA202/06/1315; GA MŠk(CZ) ME 697 Institutional research plan: CEZ:AV0Z20670512 Keywords : porous semiconductors * electrochmical analysis * transmission electron microscopy * scanning electron microscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.959, year: 2008

  10. Epitaxy of semiconductor-superconductor nanowires

    DEFF Research Database (Denmark)

    Krogstrup, P.; Ziino, N.L.B.; Chang, W.

    2015-01-01

    Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important example where the atomic scale uniformity of the interface...

  11. Control of optically induced currents in semiconductor crystals

    Energy Technology Data Exchange (ETDEWEB)

    Kohli, Kapil Kumar

    2010-06-01

    The generation and control of optically induced currents has the potential to become an important building block for optical computers. Here, shift and rectification currents are investigated that emerge from a divergence of the optical susceptibility. It is known that these currents react to the shape of the impinging laser pulse, and especially to the shape of the pulse envelope. The main goal is the systematic manipulation of the pulse envelope with an optical pulse shaper that is integrated into a standard THz emission setup. The initial approach, the chirping of the laser pulse only has a weak influence on the envelope and the currents. Instead, a second approach is suggested that uses the combined envelope of a phase-stable pulse-pair as a parameter. In a laser pulse, the position of the maxima of the electrical field and the pulse envelope are shifted relative to each other. This shift is known as the Carrier-Envelope Phase (CEP). It is a new degree of freedom that is usually only accessible in specially stabilized systems. It is shown, that in a phase-stable pulse-pair, at least the relative CEP is usable as a new degree of freedom. It has a great influence on the shape of the pulse envelope and thus on the current density. It is shown that this approach enables the coherent control of the current density. The experiments are corroborated by a theoretical model of the system. The potential of this approach is demonstrated in an application. A framework is presented that uses an iterative genetic algorithm to create arbitrarily shaped THz traces. The algorithm controls the optical pulse shaper, and varies the phase of the impinging laser pulses until the desired target trace is found. (orig.)

  12. Optimal Charge control of Electric Vehicles in Electricity Markets

    DEFF Research Database (Denmark)

    Lan, Tian; Hu, Junjie; Wu, Guang

    2011-01-01

    Environment constraints, petroleum scarcity, high price on fuel resources and recent advancements in battery technology have led to emergence of Electric Vehicles (EVs). As increasing numbers of EVs enter the electricity market, these extra loads may cause peak load and need to be properly...... controlled. In this paper, an algorithm is presented for every individual vehicles to minimize the charging cost while satisfying the vehicle owner’s requirements. The algorithm is based on a given future electricity prices and uses dynamic programming. Optimization aims to find the economically optimal...... solution for each vehicle....

  13. Electrical Potentials Observed During Frictional Stick-Slip - A Semiconductor Mechanism

    Science.gov (United States)

    Leeman, J.; Scuderi, M.; Marone, C.; Saffer, D. M.

    2013-12-01

    Electromagnetic phenomena are commonly reported during and after large earthquakes. Various lines of evidence including charring of plant roots, magnetic remnant signatures in pseudotachylite, and visible earthquake lights indicate a strong electrical potential separation during co-seismic rupture. Suggested explanations have included triboelectricity, piezoelectricity, and streaming potentials. The 'semiconductor effect', or migration of electron holes, has been proposed as an alternative explanation and studied extensively in solids. We present evidence of a similar migration effect in a granular material that exhibits repeated frictional stick-slip events under a variety of conditions. Soda-lime glass beads were sheared in a double-direct shear configuration in a biaxial loading frame. Glass beads exhibit consistent, repetitive stick-slip and rate/state friction effects that are similar to rock. Layers of 5 mm thickness were sheared under a constant normal load of 4MPa, at load point velocities of 1, 30, and 100 μm/s. This was done for mono-disperse particle size distributions of 100-150 μm and 420-500 μm. Tests were conducted at room humidity, at 100% humidity, and under submerged conditions. During shearing, the electrical potential of the surface was monitored relative to the system ground with a non-contact electrostatic volt meter (ESVM) manufactured by Trek Incorporated. During stick-slip events, we observe electrical potential anomalies that appear to be related to failure of force chains supporting the shear load. Two distinct types of behavior are delineated by the attainment of steady state frictional sliding. In the pre-steady state phase, as shear stress is increasing, layers are observed to charge during stick-slip and the potential of the entire system rises. When shear stress rises to the level of steady state frictional sliding, the system begins to discharge, with superimposed anomalies characterized by potential drops of several volts that

  14. Control of ultrafast pulse propagation in semiconductor components

    DEFF Research Database (Denmark)

    Poel, Mike van der; Hansen, Per Lunnemann; Mørk, Jesper

    2009-01-01

    Time shifting of optical pulses with duration in the range from 100 fs to a few ps represents one extreme of slow light, where THz bandwidth for the slow down or speed up is necessary. The physics of the time shifting of such very short pulses involves the gain saturation of the optical medium...... and is different from the slow-light mechanisms responsible for time shifting of pulses of narrower bandwidth. Experimental and theoretical results with semiconductor components are presented, emphasizing the physics as well as the limitations imposed by the dynamical processes....

  15. Electrical control of single hole spins in nanowire quantum dots.

    Science.gov (United States)

    Pribiag, V S; Nadj-Perge, S; Frolov, S M; van den Berg, J W G; van Weperen, I; Plissard, S R; Bakkers, E P A M; Kouwenhoven, L P

    2013-03-01

    The development of viable quantum computation devices will require the ability to preserve the coherence of quantum bits (qubits). Single electron spins in semiconductor quantum dots are a versatile platform for quantum information processing, but controlling decoherence remains a considerable challenge. Hole spins in III-V semiconductors have unique properties, such as a strong spin-orbit interaction and weak coupling to nuclear spins, and therefore, have the potential for enhanced spin control and longer coherence times. A weaker hyperfine interaction has previously been reported in self-assembled quantum dots using quantum optics techniques, but the development of hole-spin-based electronic devices in conventional III-V heterostructures has been limited by fabrication challenges. Here, we show that gate-tunable hole quantum dots can be formed in InSb nanowires and used to demonstrate Pauli spin blockade and electrical control of single hole spins. The devices are fully tunable between hole and electron quantum dots, which allows the hyperfine interaction strengths, g-factors and spin blockade anisotropies to be compared directly in the two regimes.

  16. Electrical detection of spin transport in lateral ferromagnet-semiconductor devices

    Science.gov (United States)

    Lou, Xiaohua

    2007-03-01

    A fully electrical scheme of spin injection, transport, and detection in a single ferromagnet-semiconductor structure has been a long-standing goal in the field of spintronics. In this talk, we report on an experimental demonstration of such a scheme. The devices are fabricated from epitaxial Fe/GaAs (100) heterostructures with highly doped GaAs as a Schottky tunnel barrier. A set of closely spaced Fe contacts on the top of an n-GaAs channel are used as spin injectors and detectors. Reference electrodes are placed at the far ends of the channel, allowing for non-local spin detection [1]. The electro-chemical potential of the detector is sensitive to the relative magnetizations of the injector and detector. In spin-valve measurements, a magnetic field is applied along the Fe easy axis to switch the relative magnetizations of injector and detector from parallel to antiparallel, resulting in a voltage jump that is proportional to the non-equilibrium spin polarization in the channel. A more rigorous test of electrical spin detection is the observation of the Hanle effect, in which an out-of-plane magnetic field is used to modulate and dephase the spin polarization in the channel. The magnitudes of the observed Hanle curves agree with the results of the spin-valve measurements. The dependence of the Hanle curves on temperature and contact separation is studied in detail and is consistent with a drift-diffusion model incorporating spin precession and relaxation. The spin polarization generated by spin injection (reverse bias at the injector) or spin accumulation (forward bias at the injector) is measured using the magneto-optical Kerr effect and is found to be in good agreement with the spin-dependent non-local voltage. Both the transport and optical measurements show a non-linear relationship between the bias voltage at the injector and the spin polarization in the channel. [1] M. Johnson and R. H. Silsbee, Phys. Rev. Lett. 55, 1790 (1985).

  17. Electrically controlled liquid crystal fiber

    Science.gov (United States)

    Corella-Madueño, A.; Reyes, J. Adrián

    2006-08-01

    We consider a cylindrical fiber whose core is a liquid crystal (LC) subject to the action of a low frequency field applied parallel to the axis of the cylinder and having initially the escaped configuration. We find the distorted textures of the nematic inside the cylinder by assuming arbitrary anchoring boundary conditions. In the optical limit we calculate the ray trajectories followed by a low intensity beam along the fiber parametrized by a low frequency electric field. Finally, we calculate exactly the spatial dependence of the transverse magnetic modes distribution in the guide, on the electric field, by using a numerical scheme. We summarize our paper and discuss our results.

  18. AutoCAD electrical 2016 for electrical control designers

    CERN Document Server

    Tickoo, Sham

    2016-01-01

    The AutoCAD Electrical 2016 for Electrical Control Designers textbook has been written to assist the engineering students and the practicing designers who are new to AutoCAD Electrical. Using this textbook, the readers can learn the application of basic tools required for creating professional electrical control drawings with the help of AutoCAD Electrical. Keeping in view the varied requirements of the users, this textbook covers a wide range of tools and features such as schematic drawings, Circuit Builder, panel drawings, parametric and nonparametric PLC modules, stand-alone PLC I/O points, ladder diagrams, point-to-point wiring diagrams, report generation, creation of symbols, and so on. This will help the readers to create electrical drawings easily and effectively. Special emphasis has been laid on the introduction of concepts, which have been explained using text and supported with graphical examples. The examples and tutorials used in this book ensure that the users can relate the information provided...

  19. Distributed control in the electricity infrastructure

    International Nuclear Information System (INIS)

    Kok, J.K.; Warmer, C.; Kamphuis, I.G.; Mellstrand, P.; Gustavsson, R.

    2006-01-01

    Different driving forces push the electricity production towards decentralization. As a result, the current electricity infrastructure is expected to evolve into a network of networks, in which all system parts communicate with each other and influence each other. Multiagent systems and electronic markets form an appropriate technology needed for control and coordination tasks in the future electricity network. We present the PowerMatcher, a market-based control concept for supply demand matching (SDM) in electricity networks. In a simulation study we show the ability of this approach to raise the simultaneousness of electricity production and consumption within (local) control clusters. This control concept can be applied in different business cases like reduction of imbalance costs in commercial portfolios or virtual power plant operation of distributed generators. Two PowerMatcher-based field test configurations are described, one currently in operation, one currently under construction

  20. Analytical procedure for experimental quantification of carrier concentration in semiconductor devices by using electric scanning probe microscopy

    International Nuclear Information System (INIS)

    Fujita, Takaya; Matsumura, Koji; Itoh, Hiroshi; Fujita, Daisuke

    2014-01-01

    Scanning capacitance microscopy (SCM) is based on a contact-mode variant of atomic force microscopy, which is used for imaging two-dimensional carrier (electrons and holes) distributions in semiconductor devices. We introduced a method of quantification of the carrier concentration by experimentally deduced calibration curves, which were prepared for semiconductor materials such as silicon and silicon carbide. The analytical procedure was circulated to research organizations in a round-robin test. The effectiveness of the method was confirmed for practical analysis and for what is expected for industrial pre-standardization from the viewpoint of comparability among users. It was also applied to other electric scanning probe microscopy techniques such as scanning spreading resistance microscopy and scanning nonlinear dielectric microscopy. Their depth profiles of carrier concentration were found to be in good agreement with those characterized by SCM. These results suggest that our proposed method will be compatible with future next-generation microscopy. (paper)

  1. Electric-field gradients at Ta impurities in Sc{sub 2}O{sub 3} semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Richard, Diego, E-mail: richard@fisica.unlp.edu.ar [Departamento de Fisica e Instituto de Fisica La Plata (IFLP, CONICET La Plata), Facultad de Ciencias Exactas, Universidad Nacional de La Plata, CC 67, 1900 La Plata, Argentina. (Argentina); Munoz, Emiliano L. [Departamento de Fisica e Instituto de Fisica La Plata (IFLP, CONICET La Plata), Facultad de Ciencias Exactas, Universidad Nacional de La Plata, CC 67, 1900 La Plata, Argentina. (Argentina); Errico, Leonardo A. [Departamento de Fisica e Instituto de Fisica La Plata (IFLP, CONICET La Plata), Facultad de Ciencias Exactas, Universidad Nacional de La Plata, CC 67, 1900 La Plata, Argentina. (Argentina); Universidad Nacional del Noroeste Bonaerense (UNNOBA), Monteagudo 2772, 2700 Pergamino, Argentina. (Argentina); Renteria, Mario [Departamento de Fisica e Instituto de Fisica La Plata (IFLP, CONICET La Plata), Facultad de Ciencias Exactas, Universidad Nacional de La Plata, CC 67, 1900 La Plata, Argentina. (Argentina)

    2012-08-15

    In this work we present an ab initio study of Ta-doped Sc{sub 2}O{sub 3} semiconductor. Calculations were performed at dilute Ta impurities located at both cationic sites of the host structure, using the Augmented Plane Wave plus Local Orbitals (APW+lo) method. The structural atomic relaxations and the electric-field gradients (EFG) were studied for different charge states of the cell in order to simulate different ionization states of the double-donor Ta impurity. From the results for the EFG tensor at Ta impurity sites and the comparison with experimental results obtained using the Time-Differential {gamma}-{gamma} Perturbed-Angular-Correlations technique we could determined the structural distortions induced by the Ta impurity and the electronic structure of the doped-semiconductor.

  2. Characteristics of Superjunction Lateral-Double-Diffusion Metal Oxide Semiconductor Field Effect Transistor and Degradation after Electrical Stress

    Science.gov (United States)

    Lin, Jyh‑Ling; Lin, Ming‑Jang; Lin, Li‑Jheng

    2006-04-01

    The superjunction lateral double diffusion metal oxide semiconductor field effect has recently received considerable attention. Introducing heavily doped p-type strips to the n-type drift region increases the horizontal depletion capability. Consequently, the doping concentration of the drift region is higher and the conduction resistance is lower than those of conventional lateral-double-diffusion metal oxide semiconductor field effect transistors (LDMOSFETs). These characteristics may increase breakdown voltage (\\mathit{BV}) and reduce specific on-resistance (Ron,sp). In this study, we focus on the electrical characteristics of conventional LDMOSFETs on silicon bulk, silicon-on-insulator (SOI) LDMOSFETs and superjunction LDMOSFETs after bias stress. Additionally, the \\mathit{BV} and Ron,sp of superjunction LDMOSFETs with different N/P drift region widths and different dosages are discussed. Simulation tools, including two-dimensional (2-D) TSPREM-4/MEDICI and three-dimensional (3-D) DAVINCI, were employed to determine the device characteristics.

  3. Electric-Field-Driven Dual Vacancies Evolution in Ultrathin Nanosheets Realizing Reversible Semiconductor to Half-Metal Transition.

    Science.gov (United States)

    Lyu, Mengjie; Liu, Youwen; Zhi, Yuduo; Xiao, Chong; Gu, Bingchuan; Hua, Xuemin; Fan, Shaojuan; Lin, Yue; Bai, Wei; Tong, Wei; Zou, Youming; Pan, Bicai; Ye, Bangjiao; Xie, Yi

    2015-12-02

    Fabricating a flexible room-temperature ferromagnetic resistive-switching random access memory (RRAM) device is of fundamental importance to integrate nonvolatile memory and spintronics both in theory and practice for modern information technology and has the potential to bring about revolutionary new foldable information-storage devices. Here, we show that a relatively low operating voltage (+1.4 V/-1.5 V, the corresponding electric field is around 20,000 V/cm) drives the dual vacancies evolution in ultrathin SnO2 nanosheets at room temperature, which causes the reversible transition between semiconductor and half-metal, accompanyied by an abrupt conductivity change up to 10(3) times, exhibiting room-temperature ferromagnetism in two resistance states. Positron annihilation spectroscopy and electron spin resonance results show that the Sn/O dual vacancies in the ultrathin SnO2 nanosheets evolve to isolated Sn vacancy under electric field, accounting for the switching behavior of SnO2 ultrathin nanosheets; on the other hand, the different defect types correspond to different conduction natures, realizing the transition between semiconductor and half-metal. Our result represents a crucial step to create new a information-storage device realizing the reversible transition between semiconductor and half-metal with flexibility and room-temperature ferromagnetism at low energy consumption. The as-obtained half-metal in the low-resistance state broadens the application of the device in spintronics and the semiconductor to half-metal transition on the basis of defects evolution and also opens up a new avenue for exploring random access memory mechanisms and finding new half-metals for spintronics.

  4. Microeconomics of yield learning and process control in semiconductor manufacturing

    Science.gov (United States)

    Monahan, Kevin M.

    2003-06-01

    Simple microeconomic models that directly link yield learning to profitability in semiconductor manufacturing have been rare or non-existent. In this work, we review such a model and provide links to inspection capability and cost. Using a small number of input parameters, we explain current yield management practices in 200mm factories. The model is then used to extrapolate requirements for 300mm factories, including the impact of technology transitions to 130nm design rules and below. We show that the dramatic increase in value per wafer at the 300mm transition becomes a driver for increasing metrology and inspection capability and sampling. These analyses correlate well wtih actual factory data and often identify millions of dollars in potential cost savings. We demonstrate this using the example of grating-based overlay metrology for the 65nm node.

  5. Control of hole localization in magnetic semiconductors by axial strain

    Science.gov (United States)

    Raebiger, Hannes; Bae, Soungmin; Echeverría-Arrondo, Carlos; Ayuela, Andrés

    2018-02-01

    Mn and Fe-doped GaN are widely studied prototype systems for hole-mediated magnetic semiconductors. The nature of the hole states around the Mn and Fe impurities, however, remains under debate. Our self-interaction corrected density-functional calculations show that the charge neutral Mn 0 and positively charged Fe+ impurities have symmetry-broken d5+h ground states, in which the hole is trapped by one of the surrounding N atoms in a small polaron state. We further show that both systems also have a variety of other d5+h configurations, including symmetric, delocalized states, which may be stabilized by axial strain. This finding opens a pathway to promote long-range hole-mediated magnetic interactions by strain engineering and clarifies why highly strained thin-films samples often exhibit anomalous magnetic properties.

  6. Energy levels and far-infrared optical absorption of impurity doped semiconductor nanorings: Intense laser and electric fields effects

    Energy Technology Data Exchange (ETDEWEB)

    Barseghyan, M.G., E-mail: mbarsegh@ysu.am

    2016-11-10

    Highlights: • The electron-impurity interaction on energy levels in nanoring have been investigated. • The electron-impurity interaction on far-infrared absorption have been investigated. • The energy levels are more stable for higher values of electric field. - Abstract: The effects of electron-impurity interaction on energy levels and far-infrared absorption in semiconductor nanoring under the action of intense laser and lateral electric fields have been investigated. Numerical calculations are performed using exact diagonalization technique. It is found that the electron-impurity interaction and external fields change the energy spectrum dramatically, and also have significant influence on the absorption spectrum. Strong dependence on laser field intensity and electric field of lowest energy levels, also supported by the Coulomb interaction with impurity, is clearly revealed.

  7. Detection and quantification through a lipid membrane using the molecularly controlled semiconductor resistor.

    Science.gov (United States)

    Bavli, Danny; Tkachev, Maria; Piwonski, Hubert; Capua, Eyal; de Albuquerque, Ian; Bensimon, David; Haran, Gilad; Naaman, Ron

    2012-01-10

    The detection of covalent and noncovalent binding events between molecules and biomembranes is a fundamental goal of contemporary biochemistry and analytical chemistry. Currently, such studies are performed routinely using fluorescence methods, surface-plasmon resonance spectroscopy, and electrochemical methods. However, there is still a need for novel sensitive miniaturizable detection methods where the sample does not have to be transferred to the sensor, but the sensor can be brought into contact with the sample studied. We present a novel approach for detection and quantification of processes occurring on the surface of a lipid bilayer membrane, by monitoring the current change through the n-type GaAs-based molecularly controlled semiconductor resistor (MOCSER), on which the membrane is adsorbed. Since GaAs is susceptible to etching in an aqueous environment, a protective thin film of methoxysilane was deposited on the device. The system was found to be sensitive enough to allow monitoring changes in pH and in the concentration of amino acids in aqueous solution on top of the membrane. When biotinylated lipids were incorporated into the membrane, it was possible to monitor the binding of streptavidin or avidin. The device modified with biotin-streptavidin complex was capable of detecting the binding of streptavidin antibodies to immobilized streptavidin with high sensitivity and selectivity. The response depends on the charge on the analyte. These results open the way to facile electrical detection of protein-membrane interactions.

  8. Pulse number control of electrical resistance for multi-level storage based on phase change

    International Nuclear Information System (INIS)

    Nakayama, K; Takata, M; Kasai, T; Kitagawa, A; Akita, J

    2007-01-01

    Phase change nonvolatile memory devices composed of SeSbTe chalcogenide semiconductor thin film were fabricated. The resistivity of the SeSbTe system was investigated to apply to multi-level data storage. The chalcogenide semiconductor acts as a programmable resistor that has a large dynamic range. The resistance of the chalcogenide semiconductor can be set to intermediate resistances between the amorphous and crystalline states using electric pulses of a specified power, and it can be controlled by repetition of the electric pulses. The size of the memory cell used in this work is 200 nm thick with a contact area of 1 μm diameter. The resistance of the chalcogenide semiconductor gradually varies from 41 kΩ to 840 Ω within octal steps. The resistance of the chalcogenide semiconductor decreases with increasing number of applied pulses. The step-down characteristic of the resistance can be explained as the crystalline region of the active phase change region increases with increasing number of applied pulses. The extent of crystallization was also estimated by the overall resistivity of the active region of the memory cell

  9. Radiation induced changes of optical, electrical and mechanical properties of glasses, dielectrics and semiconductors

    International Nuclear Information System (INIS)

    Adawi, M.A.

    2006-01-01

    This work is concerned with investigating the influence of ionizing radiation on different materials. Concretely, the change of their physical characteristics such as, the electrical resistivity, the optical density, the thermoluminescence spectra, the microhardness etc. The investigated materials are: polyethylene, glasses containing U 3 O 8 , Na 2 O and K 2 O, polyvinyl alcohol containing Ni 2 SO 4 , CoCl 2 , CuSO 4 and Cu (CH 3 COO) 2 , polymer Pb 2 O 3 /composite, germanium sulphur alloy, synthetic and natural diamond, nickel chromium steel and silicon. Irradiation is carried out in neutron fields of 10 5 -10 14 neutron/cm 2 , gamma radiation in the dose range 10 2 -10 6 Gy. and swift heavy ions of energy 1 MeV/amu fluence range 10 8 -10 16 ion/cm 2 . The possibility of working out dosimetric devices (using the above mentioned materials) possessing accurate and well expressed metrical characteristics for detecting different sorts of radiation is investigated. The optimum conditions of using these dosimeters (under different thermodynamic conditions and absolute values of registered radiation) are determined. The process of defect formation and evolution in silicon single crystal and diamond irradiated with swift heavy ions is studied. The influence of high-energy heavy ions on the surface structure of nickel chromium steel is investigated. The formation of thermally stable conducting layers at the far depth of the boron projective range in silicon irradiated with swift boron ions is confirmed. Irradiation of nickel chromium steel with xenon ions lead to the change of the elemental composition of the irradiated surface. For the case of diamond semiconductor single crystal irradiated with high-energy xenon or krypton ions possessing energy 1 MeV/nucleon, the track formation is observed for the first time. The track formation criteria are established. A model characterizing the interaction of high-energy heavy ions with diamond is introduced. Such model is found

  10. Electrical energy consumption control apparatuses and electrical energy consumption control methods

    Science.gov (United States)

    Hammerstrom, Donald J.

    2012-09-04

    Electrical energy consumption control apparatuses and electrical energy consumption control methods are described. According to one aspect, an electrical energy consumption control apparatus includes processing circuitry configured to receive a signal which is indicative of current of electrical energy which is consumed by a plurality of loads at a site, to compare the signal which is indicative of current of electrical energy which is consumed by the plurality of loads at the site with a desired substantially sinusoidal waveform of current of electrical energy which is received at the site from an electrical power system, and to use the comparison to control an amount of the electrical energy which is consumed by at least one of the loads of the site.

  11. High-power subnanosecond operation of a bistable optically controlled semiconductor switch (BOSS)

    International Nuclear Information System (INIS)

    Stoudt, D.C.; Richardson, M.A.; Demske, D.L.; Roush, R.A.; Eure, K.W.

    1994-01-01

    Recent high-power, subnanosecond-switching results of the Bistable Optically controlled Semiconductor Switch (BOSS) are presented. The process of persistent photoconductivity followed by photo-quenching have been demonstrated at megawatt power levels in copper-compensated, silicon-doped, semi-insulating gallium arsenide. These processes allow a switch to be developed that can be closed by the application of one laser pulse and opened by the application of a second laser pulse with a wavelength equal to twice that of the first laser. Switch closure is primarily achieved by elevating electrons from a deep copper center which has been diffused into the material. The opening phase is a two-step process which relies initially on the absorption of the 2-μm laser causing electrons to be elevated from the valance band back into the copper center, and finally on the recombination of electrons in the conduction band with boles in the valance band. The second step requires a sufficient concentration of recombination centers (RC) in the material for opening to occur in the subnanosecond regime. These RC's are generated in the bulk GaAs material by fast-neutron irradiation (∼ 1 MeV) at a fluence of about 3 x 10 15 cm -2 . High-power switching results which demonstrate that the BOSS switch can be opened in the subnanosecond regime are presented for the first time. Neutron-irradiated BOSS devices have been opened against a rising electric field of about 20 kV/cm (10 kV) in a time less than one nanosecond. Kilovolt electrical pulses have been generated with a FWHM of roughly 250 picoseconds

  12. A microwave technique for electrical conductivity measurements in semiconductors; Un procedimiento en frecuencia de microondas para la medicion de la conductividad electrica en semiconductores

    Energy Technology Data Exchange (ETDEWEB)

    Ramirez, A; Zehe, A [Benemerita Universidad Autonoma de Puebla, Puebla (Mexico); Starostenko, O [Universidad de las Americas, Puebla, (Mexico); Perez, L [Benemerita Universidad Autonoma de Puebla, Puebla (Mexico)

    2003-01-15

    In the present paper a theoretical approach is given together with the description of the experimental technique for electrical conductivity measurements of semiconductors in frequency range of 10 GHz, corresponding to a wavelength of {lambda}= 3 cm. It is shown, that the sample conductivity, measured without the need of electrical contacts, Is practically identical with results obtained by direct current methods. The potential use of the method for dielectric measurements in samples of general shape is included in the discussion. Given that the local electrical field is known only in bodies of ellipsoidal shape, one has to apply approximation methods for sample shapes of practical relevance (cylinders, cubes, disks). Finally, the measuring range and corresponding errors are explained on the base of measurements realized with silicon samples. [Spanish] En el presente trabajo se desarrolla la teoria junto con la descripcion del arreglo experimental para la medicion de la conductividad electrica en muestras semiconductoras, utilizando un campo de microondas de {lambda}= 3 cm, correspondiente a una frecuencia n de 10 GHz. Se demuestra que la conductividad electrica medida sin la necesidad de contactos electricos es practicamente identica con resultados obtenidos por el metodo comun utilizando corriente directa (d.c.). Se incorpora en la discusion ademas el potencial del metodo para el estudio de propiedades dielectricas en muestras de geometria general. Dado que solamente en cuerpos con geometria elipsoidal se conoce bien el campo electrico local, y con esto el momento bipolar inducido, para muestras de geometrias mas practicas (cilindros, cubos, discos) se acude a metodos de aproximacion. Finalmente, se discute el rango de mediciones y errores, y se presentan mediciones concretas, utilizando muestras de silicio.

  13. Electrical properties of nanosized non-barrier inhomogeneities in Zn-based metal-semiconductor contacts to InP

    DEFF Research Database (Denmark)

    Clausen, Thomas; Leistiko, Otto

    1998-01-01

    We have found that the electrical properties of carriers across the metal-semiconductor interface for alloyed Zn based metallizations to n- and p-InP are dominated by nanosized non-barrier inhomogeneities. The effective area covered by the nanosized regions is a small fraction of the contact area...... resulting in high values of the specific contact resistance to p-InP. For n(-)-InP, thermionic emission across nanosized inhomogeneities dominates the carrier flow when T-ann > 440 degrees C. (C) 1998 Elsevier Science B.V....

  14. A non-linear optimal control problem in obtaining homogeneous concentration for semiconductor materials

    International Nuclear Information System (INIS)

    Huang, C.-H.; Li, J.-X.

    2006-01-01

    A non-linear optimal control algorithm is examined in this study for the diffusion process of semiconductor materials. The purpose of this algorithm is to estimate an optimal control function such that the homogeneity of the concentration can be controlled during the diffusion process and the diffusion-induced stresses for the semiconductor materials can thus be reduced. The validation of this optimal control analysis utilizing the conjugate gradient method of minimization is analysed by using numerical experiments. Three different diffusion processing times are given and the corresponding optimal control functions are to be determined. Results show that the diffusion time can be shortened significantly by applying the optimal control function at the boundary and the homogeneity of the concentration is also guaranteed. This control function can be obtained within a very short CPU time on a Pentium III 600 MHz PC

  15. Optimal control applications in electric power systems

    CERN Document Server

    Christensen, G S; Soliman, S A

    1987-01-01

    Significant advances in the field of optimal control have been made over the past few decades. These advances have been well documented in numerous fine publications, and have motivated a number of innovations in electric power system engineering, but they have not yet been collected in book form. Our purpose in writing this book is to provide a description of some of the applications of optimal control techniques to practical power system problems. The book is designed for advanced undergraduate courses in electric power systems, as well as graduate courses in electrical engineering, applied mathematics, and industrial engineering. It is also intended as a self-study aid for practicing personnel involved in the planning and operation of electric power systems for utilities, manufacturers, and consulting and government regulatory agencies. The book consists of seven chapters. It begins with an introductory chapter that briefly reviews the history of optimal control and its power system applications and also p...

  16. Amplification of surface acoustic waves by transverse electric current in piezoelectric semiconductors

    DEFF Research Database (Denmark)

    Gulyaev, Yuri V.

    1974-01-01

    acoustoelectric effect but also lead to amplification of surface acoustic waves by electron drift perpendicular to the surface. For Love waves in a piezoelectric semiconductor film on a highly conducting substrate, the amplification coefficient is found and the conditions necessary for amplification...

  17. Charge-transfer mobility and electrical conductivity of PANI as conjugated organic semiconductors.

    Science.gov (United States)

    Zhang, Yahong; Duan, Yuping; Song, Lulu; Zheng, Daoyuan; Zhang, Mingxing; Zhao, Guangjiu

    2017-09-21

    The intramolecular charge transfer properties of a phenyl-end-capped aniline tetramer (ANIH) and a chloro-substituted derivative (ANICl) as organic semiconductors were theoretically studied through the first-principles calculation based on the Marcus-Hush theory. The reorganization energies, intermolecular electronic couplings, angular resolution anisotropic mobilities, and density of states of the two crystals were evaluated. The calculated results demonstrate that both ANIH and ANICl crystals show the higher electron transfer mobilities than the hole-transfer mobilities, which means that the two crystals should prefer to function as n-type organic semiconductors. Furthermore, the angle dependence mobilities of the two crystals show remarkable anisotropic character. The maximum mobility μ max of ANIH and ANICl crystals is 1.3893 and 0.0272 cm 2 V -1 s -1 , which appear at the orientation angles near 176°/356° and 119°/299° of a conducting channel on the a-b reference plane. It is synthetically evaluated that the ANIH crystal possesses relatively lower reorganization energy, higher electronic coupling, and electron transfer mobility, which means that the ANIH crystal may be the more ideal candidate as a high performance n-type organic semiconductor material. The systematic theoretical studies on organic crystals should be conducive to evaluating the charge-transport properties and designing higher performance organic semiconductor materials.

  18. Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation

    International Nuclear Information System (INIS)

    Tan Zhen; Zhao Lian-Feng; Wang Jing; Xu Jun

    2014-01-01

    Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors (MOSCAPs) with sulfur passivation were investigated and the chemical mechanisms of the sulfur passivation process were carefully studied. It was shown that the sulfur passivation treatment could reduce the interface trap density D it of the HfAlO/GaSb interface by 35% and reduce the equivalent oxide thickness (EOT) from 8 nm to 4 nm. The improved properties are due to the removal of the native oxide layer, as was proven by x-ray photoelectron spectroscopy measurements and high-resolution cross-sectional transmission electron microscopy (HRXTEM) results. It was also found that GaSb-based MOSCAPs with HfAlO gate dielectrics have interfacial properties superior to those using HfO 2 or Al 2 O 3 dielectric layers. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  19. A Versatile and Simple Approach to Generate Light Emission in Semiconductors Mediated by Electric Double Layers

    KAUST Repository

    Pu, Jiang

    2017-04-18

    The light-emitting device is the primary device for current light sources. In principle, conventional light-emitting devices need heterostructures and/or intentional carrier doping to form a p-n junction. This junction formation is, however, very difficult to achieve for most emerging semiconductors, and the fabrication of light-emitting devices is invariably a significant challenge. This study proposes a versatile and simple approach to realize light-emitting devices. This proposed device requires only a semiconducting film with two electrodes that are covered with an electrolyte. This unique structure achieves light emission at a voltage slightly larger than the bandgap energy of materials. This study applies this concept to emerging direct bandgap semiconductors, such as transition metal dichalcogenide monolayers and zinc oxide single crystals. These devices generate obvious light emission and provide sufficient evidence of the formation of a dynamic p-i-n junction or tunneling junction, presenting a versatile technique to develop optoelectronic devices.

  20. A system approach to controlling semiconductor manufacturing operations

    OpenAIRE

    Σταυράκης, Γιώργος Δ.

    1987-01-01

    Semicoductor manufacturers, faced with stiffening competition in both product cost and quality, require improved utilization of their development and manufacturing resources. Manufacturing philosophy must be changed, from focusing on short term results, to support continuous improvements in both output and quality. Such improvements demand better information management to monitor and control the manufacturing process. From these considerations, a process control methodology was develope...

  1. Optimization of Easy Atomic Force Microscope (ezAFM) Controls for Semiconductor Nanostructure Profiling

    Science.gov (United States)

    2017-09-01

    ARL-MR-0965 ● SEP 2017 US Army Research Laboratory Optimization of Easy Atomic Force Microscope (ezAFM) Controls for... Optimization of Easy Atomic Force Microscope (ezAFM) Controls for Semiconductor Nanostructure Profiling by Satwik Bisoi Science and...REPORT TYPE Memorandum Report 3. DATES COVERED (From - To) 2017 July 05–2017 August 18 4. TITLE AND SUBTITLE Optimization of Easy Atomic Force

  2. Electrical power distribution control methods, electrical energy demand monitoring methods, and power management devices

    Science.gov (United States)

    Chassin, David P [Pasco, WA; Donnelly, Matthew K [Kennewick, WA; Dagle, Jeffery E [Richland, WA

    2011-12-06

    Electrical power distribution control methods, electrical energy demand monitoring methods, and power management devices are described. In one aspect, an electrical power distribution control method includes providing electrical energy from an electrical power distribution system, applying the electrical energy to a load, providing a plurality of different values for a threshold at a plurality of moments in time and corresponding to an electrical characteristic of the electrical energy, and adjusting an amount of the electrical energy applied to the load responsive to an electrical characteristic of the electrical energy triggering one of the values of the threshold at the respective moment in time.

  3. Protection of semiconductor converters for controlled bypass reactors

    International Nuclear Information System (INIS)

    Dolgopolov, A. G.; Akhmetzhanov, N. G.; Karmanov, V. F.

    2010-01-01

    Possible ways of protecting thyristor converters in systems for magnetizing 110 - 500 kV controlled bypass reactors during switching and automatic reclosing are examined based on experience with the development of equipment, line tests, and mathematical modelling.

  4. Intraband absorption in GaAs-(Ga,Al)As variably spaced semiconductor superlattices under crossed electric and magnetic fields

    Science.gov (United States)

    Reyes-Gómez, E.; Raigoza, N.; Oliveira, L. E.

    2013-11-01

    A theoretical study of the intraband absorption properties of GaAs-Ga1-xAlxAs variably spaced semiconductor superlattices under crossed magnetic and electric fields is presented. Calculations are performed for the applied electric field along the growth-axis direction, whereas the magnetic field is considered parallel to the heterostructure layers. By defining a critical electric field so that the heterostructure energy levels are aligned in the absence of the applied magnetic fields, one finds that, in the weak magnetic-field regime, an abrupt red shift of the absorption coefficient maxima is obtained at fields equal to or larger than the critical electric field, a fact which may be explained from the localization properties of the electron wave functions. Results in the strong magnetic-field regime reveal a rich structure on the intraband absorption coefficient which may be explained from the strong dispersion exhibited by both the energy levels and transition strengths as functions of the generalized orbit-center position. Moreover, the possibility of occurrence of absorption in a wide frequency range is also demonstrated. Present calculated results may be of interest for future design and improvement of multilayered-based photovoltaic and solar-cell devices.

  5. Control of magnetism in dilute magnetic semiconductor (Ga,Mn)As films by surface decoration of molecules

    Science.gov (United States)

    Wang, Hailong; Wang, Xiaolei; Xiong, Peng; Zhao, Jianhua

    2016-03-01

    The responses of magnetic moments to external stimuli such as magnetic-field, heat, light and electric-field have been utilized to manipulate the magnetism in magnetic semiconductors, with many of the novel ideas applied even to ferromagnetic metals. Here, we review a new experimental development on the control of magnetism in (Ga,Mn)As thin films by surface decoration of organic molecules: Molecules deposited on the surface of (Ga,Mn)As thin films are shown to be capable of significantly modulating their saturation magnetization and Curie temperature. These phenomena are shown to originate from the carrier-mediated ferromagnetism in (Ga,Mn)As and the surface molecules acting as acceptors or donors depending on their highest occupied molecular orbitals, resembling the charge transfer mechanism in a pn junction in which the equilibrium state is reached on the alignment of Fermi levels.

  6. Control of magnetism in dilute magnetic semiconductor (Ga,MnAs films by surface decoration of molecules

    Directory of Open Access Journals (Sweden)

    Hailong eWang

    2016-03-01

    Full Text Available The responses of magnetic moments to external stimuli such as magnetic-field, heat, light and electric-field have been utilized to manipulate the magnetism in magnetic semiconductors, with many of the novel ideas applied even to ferromagnetic metals. Here, we review a new experimental development on the control of magnetism in (Ga,MnAs thin films by surface decoration of organic molecules: Molecules deposited on the surface of (Ga,MnAs thin films are shown to be capable of significantly modulating their saturation magnetization and Curie temperature. These phenomena are shown to originate from the carrier-mediated ferromagnetism in (Ga,MnAs and the surface molecules acting as acceptors or donors depending on their highest occupied molecular orbitals, resembling the charge transfer mechanism in a pn junction in which the equilibrium state is reached on the alignment of Fermi levels.

  7. Optimal Control Development System for Electrical Drives

    Directory of Open Access Journals (Sweden)

    Marian GAICEANU

    2008-08-01

    Full Text Available In this paper the optimal electrical drive development system is presented. It consists of both electrical drive types: DC and AC. In order to implement the optimal control for AC drive system an Altivar 71 inverter, a Frato magnetic particle brake (as load, three-phase induction machine, and dSpace 1104 controller have been used. The on-line solution of the matrix Riccati differential equation (MRDE is computed by dSpace 1104 controller, based on the corresponding feedback signals, generating the optimal speed reference for the AC drive system. The optimal speed reference is tracked by Altivar 71 inverter, conducting to energy reduction in AC drive. The classical control (consisting of rotor field oriented control with PI controllers and the optimal one have been implemented by designing an adequate ControlDesk interface. The three-phase induction machine (IM is controlled at constant flux. Therefore, the linear dynamic mathematical model of the IM has been obtained. The optimal control law provides transient regimes with minimal energy consumption. The obtained solution by integration of the MRDE is orientated towards the numerical implementation-by using a zero order hold. The development system is very useful for researchers, doctoral students or experts training in electrical drive. The experimental results are shown.

  8. Optical coherent control in semiconductors: Fringe contrast and inhomogeneous broadening

    DEFF Research Database (Denmark)

    Østergaard, John Erland; Vadim, Lyssenko; Hvam, Jørn Märcher

    2001-01-01

    in the interplay between the homogeneous and inhomogeneous broadenings are measured. Based on these experiments, a coherent control model describing the optical fringe contrast using different detection schemes, such as photoluminescence or four-wave mixing, is established. Significant spectral modulation...

  9. Kinetic theory of wave spectra in semiconductors at the strong constant electric field

    International Nuclear Information System (INIS)

    Grinev, B.V.; Seminozhenko, V.P.; Yatsenko, A.A.

    1984-01-01

    With allowanse made for the effect of strong static electric field on the electronic interaction with collective oscillations in plasms, the Languemure oscillations, ion acoustic instability of plasma with current are considered in the collisionless limit. The electric field dependence of the collisionless damping of transversal wayes is determined borh in the degenerate and the nondegenerate cases. The influence of the constant electric field on the anomalous skineffect isstudied

  10. Rational design of organic semiconductors for texture control and self-patterning on halogenated surfaces

    KAUST Repository

    Ward, Jeremy W.

    2014-05-15

    Understanding the interactions at interfaces between the materials constituting consecutive layers within organic thin-film transistors (OTFTs) is vital for optimizing charge injection and transport, tuning thin-film microstructure, and designing new materials. Here, the influence of the interactions at the interface between a halogenated organic semiconductor (OSC) thin film and a halogenated self-assembled monolayer on the formation of the crystalline texture directly affecting the performance of OTFTs is explored. By correlating the results from microbeam grazing incidence wide angle X-ray scattering (μGIWAXS) measurements of structure and texture with OTFT characteristics, two or more interaction paths between the terminating atoms of the semiconductor and the halogenated surface are found to be vital to templating a highly ordered morphology in the first layer. These interactions are effective when the separating distance is lower than 2.5 dw, where dw represents the van der Waals distance. The ability to modulate charge carrier transport by several orders of magnitude by promoting "edge-on" versus "face-on" molecular orientation and crystallographic textures in OSCs is demonstrated. It is found that the "edge-on" self-assembly of molecules forms uniform, (001) lamellar-textured crystallites which promote high charge carrier mobility, and that charge transport suffers as the fraction of the "face-on" oriented crystallites increases. The role of interfacial halogenation in mediating texture formation and the self-patterning of organic semiconductor films, as well as the resulting effects on charge transport in organic thin-film transistors, are explored. The presence of two or more anchoring sites between a halogenated semiconductor and a halogenated self-assembled monolayer, closer than about twice the corresponding van der Waals distance, alter the microstructure and improve electrical properties. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. High resolution optical spectroscopy of air-induced electrical instabilities in n-type polymer semiconductors.

    Science.gov (United States)

    Di Pietro, Riccardo; Sirringhaus, Henning

    2012-07-03

    We use high-resolution charge-accumulation optical spectroscopy to measure charge accumulation in the channel of an n-type organic field-effect transistor. We monitor the degradation of device performance in air, correlate the onset voltage shift with the reduction of charge accumulated in the polymer semiconductor, and explain the results in view of the redox reaction between the polymer, water and oxygen in the accumulation layer. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Electric-field gradients at Ta donor impurities in Cr{sub 2}O{sub 3}(Ta) semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Darriba, G.N. [Departamento de Fisica and IFLP (CONICET-UNLP), Facultad de Ciencias Exactas, Universidad Nacional de La Plata, CC 67, 1900 La Plata (Argentina); Errico, L.A. [Departamento de Fisica and IFLP (CONICET-UNLP), Facultad de Ciencias Exactas, Universidad Nacional de La Plata, CC 67, 1900 La Plata (Argentina); Universidad Nacional del Noroeste Bonaerense (UNNOBA), Monteagudo 2772, 2700 Pergamino (Argentina); Munoz, E.L; Richard, D. [Departamento de Fisica and IFLP (CONICET-UNLP), Facultad de Ciencias Exactas, Universidad Nacional de La Plata, CC 67, 1900 La Plata (Argentina); Eversheim, P.D. [Helmholtz-Institut fuer Strahlen-und Kernphysik (H-ISKP), Universitaet Bonn, Nussallee 14-16, 53115 Bonn (Germany); Renteria, M., E-mail: renteria@fisica.unlp.edu.a [Departamento de Fisica and IFLP (CONICET-UNLP), Facultad de Ciencias Exactas, Universidad Nacional de La Plata, CC 67, 1900 La Plata (Argentina)

    2009-10-01

    We report perturbed-angular-correlation (PAC) experiments on {sup 181}Hf(->{sup 181}Ta)-implanted corundum Cr{sub 2}O{sub 3} powder samples in order to determine the magnitude and symmetry of the electric-field gradient (EFG) tensor at Ta donor impurity sites of this semiconductor. These results are analyzed in the framework of ab initio full-potential augmented-plane wave plus local orbitals (FP-APW+lo) calculations. The results are also compared with EFG results coming from PAC experiments in isomorphous alpha-Al{sub 2}O{sub 3} and alpha-Fe{sub 2}O{sub 3} doped with {sup 111}In->{sup 111}Cd and {sup 181}Hf->{sup 181}Ta tracers. This combined analysis enables us to quantify the magnitude of the lattice relaxations induced by the presence of the impurity and to determine the charge state of the impurity donor level introduced by Ta in the band gap of the semiconductor.

  13. Simultaneous deterministic control of distant qubits in two semiconductor quantum dots.

    Science.gov (United States)

    Gamouras, A; Mathew, R; Freisem, S; Deppe, D G; Hall, K C

    2013-10-09

    In optimal quantum control (OQC), a target quantum state of matter is achieved by tailoring the phase and amplitude of the control Hamiltonian through femtosecond pulse-shaping techniques and powerful adaptive feedback algorithms. Motivated by recent applications of OQC in quantum information science as an approach to optimizing quantum gates in atomic and molecular systems, here we report the experimental implementation of OQC in a solid-state system consisting of distinguishable semiconductor quantum dots. We demonstrate simultaneous high-fidelity π and 2π single qubit gates in two different quantum dots using a single engineered infrared femtosecond pulse. These experiments enhance the scalability of semiconductor-based quantum hardware and lay the foundation for applications of pulse shaping to optimize quantum gates in other solid-state systems.

  14. Terahertz Focusing and Polarization Control in Large-Area Bias-Free Semiconductor Emitters

    Science.gov (United States)

    Carthy, Joanna L.; Gow, Paul C.; Berry, Sam A.; Mills, Ben; Apostolopoulos, Vasilis

    2018-03-01

    We show that, when large-area multiplex terahertz semiconductor emitters, that work on diffusion currents and Schottky potentials, are illuminated by ultrashort optical pulses they can radiate a directional electromagnetic terahertz pulse which is controlled by the angular spectrum of the incident optical beam. Using the lens that focuses the incident near-infrared pulse, we have demonstrated THz emission focusing in free space, at the same point where the optical radiation would focus. We investigated the beam waist and Gouy phase shift of the THz emission as a function of frequency. We also show that the polarization profile of the emitted THz can be tailored by the metallic patterning on the semiconductor, demonstrating radial polarization when a circular emitter design is used. Our techniques can be used for fast THz beam steering and mode control for efficiently coupling to waveguides without the need for THz lenses or parabolic mirrors.

  15. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1962-01-01

    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  16. Oscillation control system for electric motor drive

    Science.gov (United States)

    Slicker, J.M.; Sereshteh, A.

    1988-08-30

    A feedback system for controlling mechanical oscillations in the torsionally complaint drive train of an electric or other vehicle. Motor speed is converted in a processor to estimate state signals in which a plant model which are used to electronically modify the torque commands applied to the motor. 5 figs.

  17. Control of mobility in molecular organic semiconductors by dendrimer generation

    Science.gov (United States)

    Lupton, J. M.; Samuel, I. D.; Beavington, R.; Frampton, M. J.; Burn, P. L.; Bässler, H.

    2001-04-01

    Conjugated dendrimers are of interest as novel materials for light-emitting diodes. They consist of a luminescent chromophore at the core with highly branched conjugated dendron sidegroups. In these materials, light emission occurs from the core and is independent of generation. The dendron branching controls the separation between the chromophores. We present here a family of conjugated dendrimers and investigate the effect of dendron branching on light emission and charge transport. We apply a number of transport measurement techniques to thin films of a conjugated dendrimer in a light-emitting diode configuration to determine the effect of chromophore spacing on charge transport. We find that the mobility is reduced by two orders of magnitude as the size of the molecule doubles with increased branching or dendrimer generation. The degree of branching allows a unique control of mobility by molecular structure. An increase in chromophore separation also results in a reduction of intermolecular interactions, which reduces the red emission tail in film photoluminescence. We find that the steady-state charge transport is well described by a simple device model incorporating the effect of generation, and use the materials to shed light on the interpretation of transient electroluminescence data. We demonstrate the significance of the ability to tune the mobility in bilayer devices, where a more balanced charge transport can be achieved.

  18. Role of band states and trap states in the electrical properties of organic semiconductors: Hopping versus mobility edge model

    KAUST Repository

    Mehraeen, Shafigh

    2013-05-01

    We compare the merits of a hopping model and a mobility edge model in the description of the effect of charge-carrier concentration on the electrical conductivity, carrier mobility, and Fermi energy of organic semiconductors. We consider the case of a composite electronic density of states (DOS) that consists of a superposition of a Gaussian DOS and an exponential DOS. Using kinetic Monte Carlo simulations, we apply the two models in order to interpret the recent experimental data reported for n-doped C60 films. While both models are capable of reproducing the experimental data very well and yield qualitatively similar characteristic parameters for the density of states, some discrepancies are found at the quantitative level. © 2013 American Physical Society.

  19. Investigation of structural and electrical properties on substrate material for high frequency metal-oxide-semiconductor (MOS) devices

    Science.gov (United States)

    Kumar, M.; Yang, Sung-Hyun; Janardhan Reddy, K.; JagadeeshChandra, S. V.

    2017-04-01

    Hafnium oxide (HfO2) thin films were grown on cleaned P-type Ge and Si substrates by using atomic layer deposition technique (ALD) with thickness of 8 nm. The composition analysis of as-deposited and annealed HfO2 films was characterized by XPS, further electrical measurements; we fabricated the metal-oxide-semiconductor (MOS) devices with Pt electrode. Post deposition annealing in O2 ambient at 500 °C for 30 min was carried out on both Ge and Si devices. Capacitance-voltage (C-V) and conductance-voltage (G-V) curves measured at 1 MHz. The Ge MOS devices showed improved interfacial and electrical properties, high dielectric constant (~19), smaller EOT value (0.7 nm), and smaller D it value as Si MOS devices. The C-V curves shown significantly high accumulation capacitance values from Ge devices, relatively when compare with the Si MOS devices before and after annealing. It could be due to the presence of very thin interfacial layer at HfO2/Ge stacks than HfO2/Si stacks conformed by the HRTEM images. Besides, from current-voltage (I-V) curves of the Ge devices exhibited similar leakage current as Si devices. Therefore, Ge might be a reliable substrate material for structural, electrical and high frequency applications.

  20. The control of stoichiometry in Epitaxial semiconductor structures. Interfacial Chemistry: Property relations. A workshop review

    Science.gov (United States)

    Bachmann, Klaus J.

    1995-01-01

    A workshop on the control of stoichiometry in epitaxial semiconductor structures was held on August 21-26, 1995 in the hotel Stutenhaus at Vesser in Germany. The secluded location of the workshop in the forest of Thuringia and its informal style stimulated extensive private discussions among the participants and promoted new contacts between young scientists from Eastern and Western Europe and the USA. Topics addressed by the presentations were interactions of precursors to heteroepitaxy and doping with the substrate surface, the control of interfacial properties under the conditions of heteroepitaxy for selected materials systems, methods of characterization of interfaces and native point defects in semiconductor heterostructures and an in depth evaluation of the present status of the control and characterization of the point defect chemistry for one specific semiconductor (ZnGeP2), including studies of both heterostructures and bulk single crystals. The selected examples of presentations and comments given here represent individual choices - made by the author to highlight major points of the discussions.

  1. Defect Characterization, Imaging, and Control in Wide-Bandgap Semiconductors and Devices

    Science.gov (United States)

    Brillson, L. J.; Foster, G. M.; Cox, J.; Ruane, W. T.; Jarjour, A. B.; Gao, H.; von Wenckstern, H.; Grundmann, M.; Wang, B.; Look, D. C.; Hyland, A.; Allen, M. W.

    2018-03-01

    Wide-bandgap semiconductors are now leading the way to new physical phenomena and device applications at nanoscale dimensions. The impact of defects on the electronic properties of these materials increases as their size decreases, motivating new techniques to characterize and begin to control these electronic states. Leading these advances have been the semiconductors ZnO, GaN, and related materials. This paper highlights the importance of native point defects in these semiconductors and describes how a complement of spatially localized surface science and spectroscopy techniques in three dimensions can characterize, image, and begin to control these electronic states at the nanoscale. A combination of characterization techniques including depth-resolved cathodoluminescence spectroscopy, surface photovoltage spectroscopy, and hyperspectral imaging can describe the nature and distribution of defects at interfaces at both bulk and nanoscale surfaces, their metal interfaces, and inside nanostructures themselves. These features as well as temperature and mechanical strain inside wide-bandgap device structures at the nanoscale can be measured even while these devices are operating. These advanced capabilities enable several new directions for describing defects at the nanoscale, showing how they contribute to device degradation, and guiding growth processes to control them.

  2. Electrical, instrumentation, and control codes and standards

    International Nuclear Information System (INIS)

    Kranning, A.N.

    1978-01-01

    During recent years numerous documents in the form of codes and standards have been developed and published to provide design, fabrication and construction rules and criteria applicable to instrumentation, control and power distribution facilities for nuclear power plants. The contents of this LTR were prepared by NUS Corporation under Subcontract K5108 and provide a consolidated index and listing of the documents selected for their application to procurement of materials and design of modifications and new construction at the LOFT facility. These codes and standards should be applied together with the National Electrical Code, the ID Engineering Standards and LOFT Specifications to all LOFT instrument and electrical design activities

  3. Control of the spin geometric phase in semiconductor quantum rings.

    Science.gov (United States)

    Nagasawa, Fumiya; Frustaglia, Diego; Saarikoski, Henri; Richter, Klaus; Nitta, Junsaku

    2013-01-01

    Since the formulation of the geometric phase by Berry, its relevance has been demonstrated in a large variety of physical systems. However, a geometric phase of the most fundamental spin-1/2 system, the electron spin, has not been observed directly and controlled independently from dynamical phases. Here we report experimental evidence on the manipulation of an electron spin through a purely geometric effect in an InGaAs-based quantum ring with Rashba spin-orbit coupling. By applying an in-plane magnetic field, a phase shift of the Aharonov-Casher interference pattern towards the small spin-orbit-coupling regions is observed. A perturbation theory for a one-dimensional Rashba ring under small in-plane fields reveals that the phase shift originates exclusively from the modulation of a pure geometric-phase component of the electron spin beyond the adiabatic limit, independently from dynamical phases. The phase shift is well reproduced by implementing two independent approaches, that is, perturbation theory and non-perturbative transport simulations.

  4. Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

    KAUST Repository

    Ghoneim, Mohamed T.; Rojas, Jhonathan Prieto; Young, Chadwin D.; Bersuker, Gennadi; Hussain, Muhammad Mustafa

    2015-01-01

    We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard

  5. Climate control loads prediction of electric vehicles

    International Nuclear Information System (INIS)

    Zhang, Ziqi; Li, Wanyong; Zhang, Chengquan; Chen, Jiangping

    2017-01-01

    Highlights: • A model of vehicle climate control loads is proposed based on experiments. • Main climate control loads of the modeled vehicle are quantitatively analyzed. • Range reductions of the modeled vehicle under different conditions are simulated. - Abstract: A new model of electric vehicle climate control loads is provided in this paper. The mathematical formulations of the major climate control loads are developed, and the coefficients of the formulations are experimentally determined. Then, the detailed climate control loads are analyzed, and the New European Driving Cycle (NEDC) range reductions due to these loads are calculated under different conditions. It is found that in an electric vehicle, the total climate control loads vary with the vehicle speed, HVAC mode and blower level. The ventilation load is the largest climate control load, followed by the solar radiation load. These two add up to more than 80% of total climate control load in summer. The ventilation load accounts for 70.7–83.9% of total heating load under the winter condition. The climate control loads will cause a 17.2–37.1% reduction of NEDC range in summer, and a 17.1–54.1% reduction in winter, compared to the AC off condition. The heat pump system has an advantage in range extension. A heat pump system with an average heating COP of 1.7 will extend the range by 7.6–21.1% based on the simulation conditions.

  6. OPTIMAL CONTROL FOR ELECTRIC VEHICLE STABILIZATION

    Directory of Open Access Journals (Sweden)

    MARIAN GAICEANU

    2016-01-01

    Full Text Available This main objective of the paper is to stabilize an electric vehicle in optimal manner to a step lane change maneuver. To define the mathematical model of the vehicle, the rigid body moving on a plane is taken into account. An optimal lane keeping controller delivers the adequate angles in order to stabilize the vehicle’s trajectory in an optimal way. Two degree of freedom linear bicycle model is adopted as vehicle model, consisting of lateral and yaw motion equations. The proposed control maintains the lateral stability by taking the feedback information from the vehicle transducers. In this way only the lateral vehicle’s dynamics are enough to considerate. Based on the obtained linear mathematical model the quadratic optimal control is designed in order to maintain the lateral stability of the electric vehicle. The numerical simulation results demonstrate the feasibility of the proposed solution.

  7. EXPORT CONTROLS: Rapid Advances in China's Semiconductor Industry Underscore Need for Fundamental U.S. Policy Review

    National Research Council Canada - National Science Library

    2002-01-01

    The United States controls the export of certain technology, including some of the equipment and materials used to make semiconductors, to sensitive destinations such as China for national security...

  8. Magnetic and electrical transport properties of delta-doped amorphous Ge:Mn magnetic semiconductors

    International Nuclear Information System (INIS)

    Li, H.L.; Lin, H.T.; Wu, Y.H.; Liu, T.; Zhao, Z.L.; Han, G.C.; Chong, T.C.

    2006-01-01

    We report on the growth and characterization of delta-doped amorphous Ge:Mn diluted magnetic semiconductor thin films on GaAs (0 0 1) substrates. The fabricated samples exhibit different magnetic behaviors, depending on the Mn doping concentration. The Curie temperature was found to be dependent on both the Mn doping concentration and spacing between the doping layers. A sharp drop in magnetization and rise in resistivity are observed at low temperature in samples with high Mn doping concentrations, which is also accompanied by a negative thermal remanent magnetization (TRM) in the higher temperature range. The temperature at which the magnetization starts to drop and the negative TRM appears show a correlation with the Mn doping concentration. The experimental results are discussed based on the formation of ferromagnetic regions at high temperature and antiferromagnetic coupling between these regions at low temperature

  9. Pressure-controlled terahertz filter based on 1D photonic crystal with a defective semiconductor

    Science.gov (United States)

    Qinwen, XUE; Xiaohua, WANG; Chenglin, LIU; Youwen, LIU

    2018-03-01

    The tunable terahertz (THz) filter has been designed and studied, which is composed of 1D photonic crystal (PC) containing a defect layer of semiconductor GaAs. The analytical solution of 1D defective PC (1DDPC) is deduced based on the transfer matrix method, and the electromagnetic plane wave numerical simulation of this 1DDPC is performed by using the finite element method. The calculated and simulated results have confirmed that the filtering transmittance of this 1DDPC in symmetric structure of air/(Si/SiO2) N /GaAs/(SiO2/Si) N /air is far higher than in asymmetric structure of air/(Si/SiO2) N /GaAs/(Si/SiO2) N /air, where the filtering frequency can be tuned by the external pressure. It can provide a feasible route to design the external pressure-controlled THz filter based on 1DPC with a defective semiconductor.

  10. Defect-induced ferromagnetism in semiconductors: A controllable approach by particle irradiation

    International Nuclear Information System (INIS)

    Zhou, Shengqiang

    2014-01-01

    Making semiconductors ferromagnetic has been a long dream. One approach is to dope semiconductors with transition metals (TM). TM ions act as local moments and they couple with free carriers to develop collective magnetism. However, there are no fundamental reasons against the possibility of local moment formation from localized sp states. Recently, ferromagnetism was observed in nonmagnetically doped, but defective semiconductors or insulators including ZnO and TiO 2 . This kind of observation challenges the conventional understanding of ferromagnetism. Often the defect-induced ferromagnetism has been observed in samples prepared under non-optimized condition, i.e. by accident or by mistake. Therefore, in this field theory goes much ahead of experimental investigation. To understand the mechanism of the defect-induced ferromagnetism, one needs a better controlled method to create defects in the crystalline materials. As a nonequilibrium and reproducible approach of inducing defects, ion irradiation provides such a possibility. Energetic ions displace atoms from their equilibrium lattice sites, thus creating mainly vacancies, interstitials or antisites. The amount and the distribution of defects can be controlled by the ion fluence and energy. By ion irradiation, we have generated defect-induced ferromagnetism in ZnO, TiO 2 and SiC. In this short review, we also summarize some results by other groups using energetic ions to introduce defects, and thereby magnetism in various materials. Ion irradiation combined with proper characterizations of defects could allow us to clarify the local magnetic moments and the coupling mechanism in defective semiconductors. Otherwise we may have to build a new paradigm to understand the defect-induced ferromagnetism

  11. Optical and electrical characterization of high resistivity semiconductors for constant-bias microbolometer devices

    Science.gov (United States)

    Saint John, David B.

    The commercial market for uncooled infrared imaging devices has expanded in the last several decades, following the declassification of pulse-biased microbolometer-based focal plane arrays (FPAs) using vanadium oxide as the sensing material. In addition to uncooled imaging platforms based on vanadium oxide, several constant-bias microbolometer FPAs have been developed using doped hydrogenated amorphous silicon (a-Si:H) as the active sensing material. While a-Si:H and the broader Si1-xGex:H system have been studied within the context of photovoltaic (PV) devices, only recently have these materials been studied with the purpose of qualifying and optimizing them for potential use in microbolometer applications, which demand thinner films deposited onto substrates different than those used in PV. The behavior of Ge:H is of particular interest for microbolometers due to its intrinsically low resistivity without the introduction of dopants, which alter the growth behavior and frustrate any attempt to address the merits of protocrystalline a-Ge:H. This work reports the optical, microstructural, and electrical characterization and qualification of a variety of Si:H, Si1-xGex:H, and Ge:H films deposited using a plasma enhanced chemical vapor deposition (PECVD) process, including a-Ge:H films which exhibit high TCR (4-6 -%/K) and low 1/f noise at resistivities of interest for microbolometers (4000 -- 6000 O cm). Thin film deposition has been performed simultaneously with real-time optical characterization of the growth evolution dynamics, providing measurement of optical properties and surface roughness evolutions relevant to controlling the growth process for deliberate variations in film microstructure. Infrared spectroscopic ellipsometry has been used to characterize the Si-H and Ge-H absorption modes allowing assessment of the hydrogen content and local bonding behavior in thinner films than measured traditionally. This method allows IR absorption analysis of hydrogen

  12. Electrical Bioimpedance-Controlled Surgical Instrumentation.

    Science.gov (United States)

    Brendle, Christian; Rein, Benjamin; Niesche, Annegret; Korff, Alexander; Radermacher, Klaus; Misgeld, Berno; Leonhardt, Steffen

    2015-10-01

    A bioimpedance-controlled concept for bone cement milling during revision total hip replacement is presented. Normally, the surgeon manually removes bone cement using a hammer and chisel. However, this procedure is relatively rough and unintended harm may occur to tissue at any time. The proposed bioimpedance-controlled surgical instrumentation improves this process because, for example, most risks associated with bone cement removal are avoided. The electrical bioimpedance measurements enable online process-control by using the milling head as both a cutting tool and measurement electrode at the same time. Furthermore, a novel integrated surgical milling tool is introduced, which allows acquisition of electrical bioimpedance data for online control; these data are used as a process variable. Process identification is based on finite element method simulation and on experimental studies with a rapid control prototyping system. The control loop design includes the identified process model, the characterization of noise as being normally distributed and the filtering, which is necessary for sufficient accuracy ( ±0.5 mm). Also, in a comparative study, noise suppression is investigated in silico with a moving average filter and a Kalman filter. Finally, performance analysis shows that the bioimpedance-controlled surgical instrumentation may also performs effectively at a higher feed rate (e.g., 5 mm/s).

  13. Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb{sub 2}Te{sub 3} chalcogenide semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Sherchenkov, A. A. [National Research University of Electronic Technology (Russian Federation); Kozyukhin, S. A., E-mail: sergkoz@igic.ras.ru [Russian Academy of Sciences, Kurnakov Institute of General and Inorganic Chemistry (Russian Federation); Lazarenko, P. I.; Babich, A. V. [National Research University of Electronic Technology (Russian Federation); Bogoslovskiy, N. A. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Sagunova, I. V.; Redichev, E. N. [National Research University of Electronic Technology (Russian Federation)

    2017-02-15

    The temperature dependences of the resistivity and current–voltage (I–V) characteristics of phase change memory thin films based on quasi-binary-line GeTe–Sb{sub 2}Te{sub 3} chalcogenide semiconductors Ge{sub 2}Sb{sub 2}Te{sub 5}, GeSb{sub 2}Te{sub 5}, and GeSb{sub 4}Te{sub 7} are investigated. The effect of composition variation along the quasibinary line on the electrical properties and transport mechanisms of the thin films is studied. The existence of three ranges with different I–V characteristics is established. The position and concentration of energy levels controlling carrier transport are estimated. The results obtained show that the electrical properties of the thin films can significantly change during a shift along the quasi-binary line GeTe–Sb{sub 2}Te{sub 3}, which is important for targeted optimization of the phase change memory technology.

  14. Transparently wrap-gated semiconductor nanowire arrays for studies of gate-controlled photoluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Nylund, Gustav; Storm, Kristian; Torstensson, Henrik; Wallentin, Jesper; Borgström, Magnus T.; Hessman, Dan; Samuelson, Lars [Solid State Physics, Nanometer Structure Consortium, Lund University, Box 118, S-221 00 Lund (Sweden)

    2013-12-04

    We present a technique to measure gate-controlled photoluminescence (PL) on arrays of semiconductor nanowire (NW) capacitors using a transparent film of Indium-Tin-Oxide (ITO) wrapping around the nanowires as the gate electrode. By tuning the wrap-gate voltage, it is possible to increase the PL peak intensity of an array of undoped InP NWs by more than an order of magnitude. The fine structure of the PL spectrum reveals three subpeaks whose relative peak intensities change with gate voltage. We interpret this as gate-controlled state-filling of luminescing quantum dot segments formed by zincblende stacking faults in the mainly wurtzite NW crystal structure.

  15. Structural, optical and electrical properties of tin oxide thin films for application as a wide band gap semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Sethi, Riti; Ahmad, Shabir; Aziz, Anver; Siddiqui, Azher Majid, E-mail: amsiddiqui@jmi.ac.in [Department of Physics, Jamia Millia Islamia, New Delhi-110025 (India)

    2015-08-28

    Tin oxide (SnO) thin films were synthesized using thermal evaporation technique. Ultra pure metallic tin was deposited on glass substrates using thermal evaporator under high vacuum. The thickness of the tin deposited films was kept at 100nm. Subsequently, the as-deposited tin films were annealed under oxygen environment for a period of 3hrs to obtain tin oxide films. To analyse the suitability of the synthesized tin oxide films as a wide band gap semiconductor, various properties were studied. Structural parameters were studied using XRD and SEM-EDX. The optical properties were studied using UV-Vis Spectrophotometry and the electrical parameters were calculated using the Hall-setup. XRD and SEM confirmed the formation of SnO phase. Uniform texture of the film can be seen through the SEM images. Presence of traces of unoxidised Sn has also been confirmed through the XRD spectra. The band gap calculated was around 3.6eV and the optical transparency around 50%. The higher value of band gap and lower value of optical transparency can be attributed to the presence of unoxidised Sn. The values of resistivity and mobility as measured by the Hall setup were 78Ωcm and 2.92cm{sup 2}/Vs respectively. The reasonable optical and electrical parameters make SnO a suitable candidate for optoelectronic and electronic device applications.

  16. The Effects of Strain on the Electrical Properties of Thin Evaporated Films of Semiconductor Compounds

    Science.gov (United States)

    Steel, G. G.

    1970-01-01

    Reports on project intended to establish how electrical resistance, Hall voltage, and magnetoresistance change when a thin film specimen is subjected to mechanical strain. Found resistance of semiconducting film of indium arsenide and indium antimonide decreases with tension and increases with compression. (LS)

  17. Integrating magnetism into semiconductor electronics

    Energy Technology Data Exchange (ETDEWEB)

    Zakharchenya, Boris P; Korenev, Vladimir L [A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg (Russian Federation)

    2005-06-30

    The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor-making the hybrid an electronic-write-in and electronic-read-out elementary storage unit. (methodological notes)

  18. Integrating magnetism into semiconductor electronics

    International Nuclear Information System (INIS)

    Zakharchenya, Boris P; Korenev, Vladimir L

    2005-01-01

    The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor-making the hybrid an electronic-write-in and electronic-read-out elementary storage unit. (methodological notes)

  19. Electrical appliance energy consumption control methods and electrical energy consumption systems

    Science.gov (United States)

    Donnelly, Matthew K [Kennewick, WA; Chassin, David P [Pasco, WA; Dagle, Jeffery E [Richland, WA; Kintner-Meyer, Michael [Richland, WA; Winiarski, David W [Kennewick, WA; Pratt, Robert G [Kennewick, WA; Boberly-Bartis, Anne Marie [Alexandria, VA

    2006-03-07

    Electrical appliance energy consumption control methods and electrical energy consumption systems are described. In one aspect, an electrical appliance energy consumption control method includes providing an electrical appliance coupled with a power distribution system, receiving electrical energy within the appliance from the power distribution system, consuming the received electrical energy using a plurality of loads of the appliance, monitoring electrical energy of the power distribution system, and adjusting an amount of consumption of the received electrical energy via one of the loads of the appliance from an initial level of consumption to an other level of consumption different than the initial level of consumption responsive to the monitoring.

  20. Electrical appliance energy consumption control methods and electrical energy consumption systems

    Science.gov (United States)

    Donnelly, Matthew K [Kennewick, WA; Chassin, David P [Pasco, WA; Dagle, Jeffery E [Richland, WA; Kintner-Meyer, Michael [Richland, WA; Winiarski, David W [Kennewick, WA; Pratt, Robert G [Kennewick, WA; Boberly-Bartis, Anne Marie [Alexandria, VA

    2008-09-02

    Electrical appliance energy consumption control methods and electrical energy consumption systems are described. In one aspect, an electrical appliance energy consumption control method includes providing an electrical appliance coupled with a power distribution system, receiving electrical energy within the appliance from the power distribution system, consuming the received electrical energy using a plurality of loads of the appliance, monitoring electrical energy of the power distribution system, and adjusting an amount of consumption of the received electrical energy via one of the loads of the appliance from an initial level of consumption to an other level of consumption different than the initial level of consumption responsive to the monitoring.

  1. Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor.

    Science.gov (United States)

    Kanaki, Toshiki; Yamasaki, Hiroki; Koyama, Tomohiro; Chiba, Daichi; Ohya, Shinobu; Tanaka, Masaaki

    2018-05-08

    A vertical spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) is a promising low-power device for the post scaling era. Here, using a ferromagnetic-semiconductor GaMnAs-based vertical spin MOSFET with a GaAs channel layer, we demonstrate a large drain-source current I DS modulation by a gate-source voltage V GS with a modulation ratio up to 130%, which is the largest value that has ever been reported for vertical spin field-effect transistors thus far. We find that the electric field effect on indirect tunneling via defect states in the GaAs channel layer is responsible for the large I DS modulation. This device shows a tunneling magnetoresistance (TMR) ratio up to ~7%, which is larger than that of the planar-type spin MOSFETs, indicating that I DS can be controlled by the magnetization configuration. Furthermore, we find that the TMR ratio can be modulated by V GS . This result mainly originates from the electric field modulation of the magnetic anisotropy of the GaMnAs ferromagnetic electrodes as well as the potential modulation of the nonmagnetic semiconductor GaAs channel layer. Our findings provide important progress towards high-performance vertical spin MOSFETs.

  2. Electrical memory features of ferromagnetic CoFeAlSi nano-particles embedded in metal-oxide-semiconductor matrix

    International Nuclear Information System (INIS)

    Lee, Ja Bin; Kim, Ki Woong; Lee, Jun Seok; An, Gwang Guk; Hong, Jin Pyo

    2011-01-01

    Half-metallic Heusler material Co 2 FeAl 0.5 Si 0.5 (CFAS) nano-particles (NPs) embedded in metal-oxide-semiconductor (MOS) structures with thin HfO 2 tunneling and MgO control oxides were investigated. The CFAS NPs were prepared by rapid thermal annealing. The formation of well-controlled CFAS NPs on thin HfO 2 tunneling oxide was confirmed by atomic force microscopy (AFM). Memory characteristics of CFAS NPs in MOS devices exhibited a large memory window of 4.65 V, as well as good retention and endurance times of 10 5 cycles and 10 9 s, respectively, demonstrating the potential of CFAS NPs as promising candidates for use in charge storage.

  3. Electrically Controllable Magnetism in Twisted Bilayer Graphene.

    Science.gov (United States)

    Gonzalez-Arraga, Luis A; Lado, J L; Guinea, Francisco; San-Jose, Pablo

    2017-09-08

    Twisted graphene bilayers develop highly localized states around AA-stacked regions for small twist angles. We show that interaction effects may induce either an antiferromagnetic or a ferromagnetic (FM) polarization of said regions, depending on the electrical bias between layers. Remarkably, FM-polarized AA regions under bias develop spiral magnetic ordering, with a relative 120° misalignment between neighboring regions due to a frustrated antiferromagnetic exchange. This remarkable spiral magnetism emerges naturally without the need of spin-orbit coupling, and competes with the more conventional lattice-antiferromagnetic instability, which interestingly develops at smaller bias under weaker interactions than in monolayer graphene, due to Fermi velocity suppression. This rich and electrically controllable magnetism could turn twisted bilayer graphene into an ideal system to study frustrated magnetism in two dimensions.

  4. Control of electrical conduction in DNA using hole doping

    Science.gov (United States)

    Lee, Hea-Yeon; Taniguchi, Masateru; Yoo, K. H.; Otsuka, Youichi; Tanaka, Hidekazu; Kawai, Tomoji

    2002-03-01

    Control of electrical conduction in DNA using hole doping H.Y.Lee1, M.Taniguchi1, K.H.Yoo2, Y.Otsuka1 H.Tanaka1 and T.Kawai1 1The Institute of Scientific and Industrial Research(ISIR), Osaka University, Osaka, Japan. 2Department of Physics, Younsei University, Seoul, Korea Possible applications of DNA molecules in electronic devices and biosensors were suggested almost ten years ago A DNA structure containing a single type of base pair appears to be a good candidate for conduction along the \\x81E-electron clouds of the stacked bases. There have been lots of investigations on conduction mechanisms of the DNA molecules. However, it is not still clear whether the observed conductions of some DNA molecules come from motions of either ionic charges or other carriers. Although the basic mechanism for DNA-mediated charge transport should be understood for electronic applications, there have been divergent reports on its nature. And I will be present the research for the charge carrier conduction of DNA film under oxygen and iodine gas by using 10¡V100 nm gap. The doping studies using oxygen and iodine gas can provide a definite answer for the carrier conduction mechanism and also a possible method to control the carrier concentration in DNA molecules. Using oxygen and iodine adsorption experiments on the poly (dG)-poly (dC) DNA molecules, we will show that their conductance becomes increased easily by several orders of magnitudes due to the hole doping, which is a characteristic behavior of a p-type semiconductor. On the other hand, we will also show that the poly (dA) - poly (dT) DNA molecules behave as an n-type semiconductor. Our works indicate that the concentration and the type of carriers in the DNA molecules could be controlled using proper doping methods. We expect that this would be a major breakthrough in DNA-based nano-electronics, similar to the fact that the doped conductive has polyacetylene opened up a new field of electronics with exciting implications

  5. Ultrafast Control of Magnetism in Ferromagnetic Semiconductors via Photoexcited Transient Carriers

    Energy Technology Data Exchange (ETDEWEB)

    Cotoros, Ingrid A. [Univ. of California, Berkeley, CA (United States)

    2008-12-01

    The field of spintronics offers perspectives for seamless integration of coupled and inter-tunable electrical and magnetic properties in a single device. For integration of the spin degree of freedom with current electronic technology, new semiconductors are needed that show electrically-tunable magnetic properties at room temperature and above. Dilute magnetic semiconductors derived from III-V compounds, like GaMnAs and InMnAs, show coupled and tunable magnetic, transport, and optical properties, due to the fact that their ferromagnetism is hole-mediated. These unconventional materials are ideal systems for manipulating the magnetic order by changing the carrier polarization, population density, and energy band distribution of the complementary subsystem of holes. This is the main theme we cover in this thesis. In particular, we develop a unique setup by use of ultraviolet pump, near-infrared probe femtosecond laser pulses, that allows for magneto-optical Kerr effect (MOKE) spectroscopy experiments. We photo-excite transient carriers in our samples, and measure the induced transient magnetization dynamics. One set of experiments performed allowed us to observe for the first time enhancement of the ferromagnetic order in GaMnAs, on an ultrafast time scale of hundreds of picoseconds. The corresponding transient increase of Curie temperature (Tc, the temperature above which a ferromagnetic material loses its permanent magnetism) of about 1 K for our experimental conditions is a very promising result for potential spintronics applications, especially since it is seconded by observation of an ultrafast ferromagnetic to paramagnetic phase transition above Tc. In a different set of experiments, we "write" the magnetization in a particular orientation in the sample plane. Using an ultrafast scheme, we alter the distribution of holes in the system and detect signatures of the particular memory state in the subsequent magnetization dynamics, with unprecedented hundreds of

  6. Passivity-Based Control of Electric Machines

    Energy Technology Data Exchange (ETDEWEB)

    Nicklasson, P.J.

    1996-12-31

    This doctoral thesis presents new results on the design and analysis of controllers for a class of electric machines. Nonlinear controllers are derived from a Lagrangian model representation using passivity techniques, and previous results on induction motors are improved and extended to Blondel-Park transformable machines. The relation to conventional techniques is discussed, and it is shown that the formalism introduced in this work facilitates analysis of conventional methods, so that open questions concerning these methods may be resolved. In addition, the thesis contains the following improvements of previously published results on the control of induction motors: (1) Improvement of a passivity-based speed/position controller, (2) Extension of passivity-based (observer-less and observer-based) controllers from regulation to tracking of rotor flux norm, (3) An extension of the classical indirect FOC (Field-Oriented Control) scheme to also include global rotor flux norm tracking, instead of only torque tracking and rotor flux norm regulation. The design is illustrated experimentally by applying the proposed control schemes to a squirrel-cage induction motor. The results show that the proposed methods have advantages over previous designs with respect to controller tuning, performance and robustness. 145 refs., 21 figs.

  7. Research on the Reliability Testing of Electrical Automation Control Equipment

    OpenAIRE

    Yongjie Luo

    2014-01-01

    According to the author’s many years’ work experience, this paper first discusses the concepts of electrical automation control equipment reliability testing, and then analyzes the test method of electrical automation control equipment reliability testing, finally, on this basis, this article discusses how to determine the reliability test method of electrical automation control equipment. Results of this study will provide a useful reference for electrical automation control equipment reliab...

  8. Optical coefficients in a semiconductor quantum ring: Electric field and donor impurity effects

    Science.gov (United States)

    Duque, C. M.; Acosta, Ruben E.; Morales, A. L.; Mora-Ramos, M. E.; Restrepo, R. L.; Ojeda, J. H.; Kasapoglu, E.; Duque, C. A.

    2016-10-01

    The electron states in a two-dimensional quantum dot ring are calculated in the presence of a donor impurity atom under the effective mass and parabolic band approximations. The effect of an externally applied electric field is also taken into account. The wavefunctions are obtained via the exact diagonalization of the problem Hamiltonian using a 2D expansion within the adiabatic approximation. The impurity-related optical response is analyzed via the optical absorption, relative refractive index change and the second harmonics generation. The dependencies of the electron states and these optical coefficients with the changes in the configuration of the quantum ring system are discussed in detail.

  9. The odd Voigt effect under a strong electric field in semiconductors

    International Nuclear Information System (INIS)

    Nguyen Hong Shon.

    1991-08-01

    The high frequency conductivity tensor σ ik (ω) in the linear approximation of magnetic field H and in the quadratic approximation of external dc electric field is derived by solving Boltzmann equation. The magneto-optical phenomena in the Voigt configuration (when a probe electro-magnetic wave propagates across a magnetic field) are investigated. It is shown that the birefringence and dichroism have a component that is odd (linear) in the magnetic fields and predominate over the even effect in the weak magnetic field. (author). 8 refs

  10. Effect of temperature and humidity on electrical properties of organic semiconductor orange dye films deposited from solution

    International Nuclear Information System (INIS)

    Karimov, K.S.; Babadzhanov, A.; Turaeva, M.A.; Marupov, R.; Ahmed, M.M.; Khalid, F.A.; Khan, M.N.; Zakaullah, Kh.; Moiz, S.A.

    2003-01-01

    In this study the effect of temperature and humidity on electrical properties of organic semiconductor orange dye (OD) have been examined. Thin films of OD (C/sub 17/H/sub 17/N/sub 5/O/sub 2/) were deposited from 10 wt. % aqueous solution on gold and conductive glass (SnO/sub 2/) substrates. The films were grown at room temperature under normal gravity conditions, i.e., 1 g and in a spin coater up to an angular speed of 1000 RPM. Two different types of structures: surface Ga/OD/Au and sandwich AVOD/SnO/sub 2/ were fabricated and their DC and low frequency AC characteristics were evaluated for the temperature range 30-70 deg. C at ambient humidity of 50-80 %. It was observed that the sandwich structure of OD films show rectification behavior whilst the conductivity of all devices are temperature and humidity dependent. Observed room temperature activation energy for OD films was 0.30 eV which showed an increase up to 0.51 eV as a function of temperature. It was found that certain sandwich structures are more sensitive to humidity than others and the observed resistance to humidity ratio for Au/OD/Au was 5.4 whereas for Au/OD/Ga samples it was 5.0. (author)

  11. Instrument for x-ray absorption spectroscopy with in situ electrical control characterizations

    International Nuclear Information System (INIS)

    Huang, Chun-Chao; Chang, Shu-Jui; Yang, Chao-Yao; Tseng, Yuan-Chieh; Chou, Hsiung

    2013-01-01

    We report a synchrotron-based setup capable of performing x-ray absorption spectroscopy and x-ray magnetic circular dichroism with simultaneous electrical control characterizations. The setup can enable research concerning electrical transport, element- and orbital-selective magnetization with an in situ fashion. It is a unique approach to the real-time change of spin-polarized electronic state of a material/device exhibiting magneto-electric responses. The performance of the setup was tested by probing the spin-polarized states of cobalt and oxygen of Zn 1-x Co x O dilute magnetic semiconductor under applied voltages, both at low (∼20 K) and room temperatures, and signal variations upon the change of applied voltage were clearly detected

  12. Electrical switching phenomenon and memory effect in the semiconductor chalcogenide glass Ge0.10 As0.20 Te0.70

    International Nuclear Information System (INIS)

    Haro, M.; Marquez, E.; Villares, P.; Jimenez-Garay, R.

    1987-01-01

    Electrical switching phenomenon, as well as the memory effect in the semiconductor chalcogenide glass Ge 0.10 As 0.20 Te 0.70 has been studied. A device with a plano-punctual interelectrode configuration has been designed and built, so that the electrical stimuli may be applied correctly. This device permits adequate positioning of the upper electrode, as well as contact pressure regulation. The I-V characteristics in the OFF-state have been obtained, showing a marked non-linear character. Equally, a relation has been found between the threshold voltage and electrical resistance parameters, indicating that the electrical power giving rise to the phenomenon is constant. Finally, memory effects showing a sudden reduction in electrical resistance, as well as interelectrode filaments, have been observed. (author)

  13. Regenerative Intelligent Brake Control for Electric Motorcycles

    Directory of Open Access Journals (Sweden)

    Juan Jesús Castillo Aguilar

    2017-10-01

    Full Text Available Vehicle models whose propulsion system is based on electric motors are increasing in number within the automobile industry. They will soon become a reliable alternative to vehicles with conventional propulsion systems. The main advantages of this type of vehicles are the non-emission of polluting gases and noise and the effectiveness of electric motors compared to combustion engines. Some of the disadvantages that electric vehicle manufacturers still have to solve are their low autonomy due to inefficient energy storage systems, vehicle cost, which is still too high, and reducing the recharging time. Current regenerative systems in motorcycles are designed with a low fixed maximum regeneration rate in order not to cause the rear wheel to slip when braking with the regenerative brake no matter what the road condition is. These types of systems do not make use of all the available regeneration power, since more importance is placed on safety when braking. An optimized regenerative braking strategy for two-wheeled vehicles is described is this work. This system is designed to recover the maximum energy in braking processes while maintaining the vehicle’s stability. In order to develop the previously described regenerative control, tyre forces, vehicle speed and road adhesion are obtained by means of an estimation algorithm. A based-on-fuzzy-logic algorithm is programmed to carry out an optimized control with this information. This system recuperates maximum braking power without compromising the rear wheel slip and safety. Simulations show that the system optimizes energy regeneration on every surface compared to a constant regeneration strategy.

  14. Hemorrhage control by microsecond electrical pulses

    Science.gov (United States)

    Mandel, Yossi; Manivanh, Richard; Dalal, Roopa; Huie, Phil; Wang, Jenny; Brinton, Mark; Palanker, Daniel

    2013-02-01

    Non-compressible hemorrhages are the most common preventable cause of death on battlefield or in civilian traumatic injuries. We report the use of sub-millisecond pulses of electric current to induce rapid constriction in femoral and mesenteric arteries and veins in rats. Extent of vascular constriction could be modulated by pulse duration, amplitude and repetition rate. Electrically-induced vasoconstriction could be maintained at steady level until the end of stimulation, and blood vessels dilated back to their original size within a few minutes after the end of stimulation. At higher settings, a blood clotting could be introduced, leading to complete and permanent occlusion of the vessels. The latter regime dramatically decreased the bleeding rate in the injured femoral and mesenteric arteries, with a complete hemorrhage arrest achieved within seconds. The average blood loss from the treated femoral artery was about 7 times less than that of a non-treated control. This new treatment modality offers a promising approach to non-damaging control of bleeding during surgery, and to efficient hemorrhage arrest in trauma patients.

  15. Electrical control of single hole spins in nanowire quantum dots

    NARCIS (Netherlands)

    Pribiag, V.S.; Nadj-Perge, S.; Frolov, S.M.; Berg, J.W.G.; Weperen, van I.; Plissard, S.R.; Bakkers, E.P.A.M.; Kouwenhoven, L.P.

    2013-01-01

    The development of viable quantum computation devices will require the ability to preserve the coherence of quantum bits (qubits)1. Single electron spins in semiconductor quantum dots are a versatile platform for quantum information processing, but controlling decoherence remains a considerable

  16. Effect of Semiconductor Element Substitution on the Electric Properties of Barium Titanate Ceramics

    Directory of Open Access Journals (Sweden)

    Garbarz-Glos B.

    2016-06-01

    Full Text Available The investigated ceramics were prepared by a solid-state reaction from simple oxides and carbonates with the use of a mixed oxide method (MOM. The morphology of BaTi0.96Si0.04O3 (BTSi04 ceramics was characterised by means of a scanning electron microscopy (SEM. It was found that Si+4 ion substitution supported the grain growth process in BT-based ceramics. The EDS results confirmed the high purity and expected quantitative composition of the synthesized material. The dielectric properties of the ceramics were also determined within the temperature range (ΔT=130-500K. It was found that the substitution of Si+4 ions had a significant influence on temperature behavior of the real (ε’ and imaginary (ε” parts of electric permittivity as well as the temperature dependence of a.c. conductivity. Temperature regions of PTCR effect (positive temperature coefficient of resistivity were determined for BTSi04 ceramics in the vicinity of structural phase transitions typical for barium titanate. No distinct maximum indicating a low-temperature structural transition to a rhombohedral phase in BTSi04 was found. The activation energy of conductivity was determined from the Arrhenius plots. It was found that substitution of Si ions in amount of 4wt.% caused almost 50% decrease in an activation energy value.

  17. Demand-controlling marketing of electric utilities

    Energy Technology Data Exchange (ETDEWEB)

    Raffee, H; Fritz, W

    1980-01-01

    In situations like the shortage of energy resources the particular autonomy of the users concerning energy demand raises more and more aggravating problems for the electric utilities (EU) and, last not least, for society (i.e. the peak-load problem, threatening bottlenecks in the supply situation). Thus the requirement for a demand-controlling marketing strategy of the EU with the help of which the individual demand should be influenced in the following manner is legitimate. The article discusses the targets, strategies, and instruments of marketing performed by the EU under the aspect of their efficiency concerning demand control. The discussion leads to e.g. the following results: that a marketing strategy for the sensible, responsible, and efficent use of energy, in the long-term, serves both the interests of the users and the interests of the EU; that such a marketing programme can have the required controlling effects especially with the help of strategies like market segmentation and cooperation. The discussion makes also clear that a demand-controlling marketing strategy of the EU can hardly be realized without a considerable change within the organization of the EU on one hand and, on the other, without expanding the marketing programme toward a marketing strategy of balance.

  18. Analytical chemistry in semiconductor manufacturing: Techniques, role of nuclear methods and need for quality control

    International Nuclear Information System (INIS)

    1989-06-01

    This report is the result of a consultants meeting held in Gaithersburg, USA, 2-3 October 1987. The meeting was hosted by the National Bureau of Standards and Technology, and it was attended by 18 participants from Denmark, Finland, India, Japan, Norway, People's Republic of China and the USA. The purpose of the meeting was to assess the present status of analytical chemistry in semiconductor manufacturing, the role of nuclear analytical methods and the need for internationally organized quality control of the chemical analysis. The report contains the three presentations in full and a summary report of the discussions. Thus, it gives an overview of the need of analytical chemistry in manufacturing of silicon based devices, the use of nuclear analytical methods, and discusses the need for quality control. Refs, figs and tabs

  19. Road load simulator tests of the Gould phase 1 functional model silicon controlled rectifier ac motor controller for electric vehicles

    Science.gov (United States)

    Gourash, F.

    1984-01-01

    The test results for a functional model ac motor controller for electric vehicles and a three-phase induction motor which were dynamically tested on the Lewis Research Center road load simulator are presented. Results show that the controller has the capability to meet the SAE-J227a D cycle test schedule and to accelerate a 1576-kg (3456-lb) simulated vehicle to a cruise speed of 88.5 km/hr (55 mph). Combined motor controller efficiency is 72 percent and the power inverter efficiency alone is 89 percent for the cruise region of the D cycle. Steady state test results for motoring, regeneration, and thermal data obtained by operating the simulator as a conventional dynamometer are in agreement with the contractor's previously reported data. The regeneration test results indicate that a reduction in energy requirements for urban driving cycles is attainable with regenerative braking. Test results and data in this report serve as a data base for further development of ac motor controllers and propulsion systems for electric vehicles. The controller uses state-of-the-art silicon controlled rectifier (SCR) power semiconductors and microprocessor-based logic and control circuitry. The controller was developed by Gould Laboratories under a Lewis contract for the Department of Energy's Electric and Hybrid Vehicle program.

  20. Road load simulator tests of the Gould phase 1 functional model silicon controlled rectifier ac motor controller for electric vehicles

    Science.gov (United States)

    Gourash, F.

    1984-02-01

    The test results for a functional model ac motor controller for electric vehicles and a three-phase induction motor which were dynamically tested on the Lewis Research Center road load simulator are presented. Results show that the controller has the capability to meet the SAE-J227a D cycle test schedule and to accelerate a 1576-kg (3456-lb) simulated vehicle to a cruise speed of 88.5 km/hr (55 mph). Combined motor controller efficiency is 72 percent and the power inverter efficiency alone is 89 percent for the cruise region of the D cycle. Steady state test results for motoring, regeneration, and thermal data obtained by operating the simulator as a conventional dynamometer are in agreement with the contractor's previously reported data. The regeneration test results indicate that a reduction in energy requirements for urban driving cycles is attainable with regenerative braking. Test results and data in this report serve as a data base for further development of ac motor controllers and propulsion systems for electric vehicles. The controller uses state-of-the-art silicon controlled rectifier (SCR) power semiconductors and microprocessor-based logic and control circuitry. The controller was developed by Gould Laboratories under a Lewis contract for the Department of Energy's Electric and Hybrid Vehicle program.

  1. Temperature controlled infrared broadband cloaking with the bilayer coatings of semiconductor and superconductor

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Xiaohua [College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China); College of Physics and Electronics, Yancheng Teachers University, Yancheng 224051 (China); Liu, Youwen, E-mail: ywliu@nuaa.edu.cn [College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China); Feng, Yuncai [College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China)

    2015-06-15

    Highlights: • We first propose that the cloak is composed of the bilayer of semiconductor and superconductor. • We realize the infrared broadband cloaking based on the scattering cancellation method. • The cloaking frequency can be tuned by external temperature. - Abstract: The infrared broadband tunable cloaking have been proposed and investigated with the bilayer coating materials of semiconductor (n-Ge) and high-temperature superconductor (YBa{sub 2}Cu{sub 3}O{sub 7}), whose cloaking frequency can be controlled by external temperature. The analytical solution is derived based on the scattering cancellation cloaking technique from the Mie scattering theory, and the full-wave numerical simulation is performed by the finite element method. The calculated and simulated results have demonstrated that this invisibility cloak may reduce the total scattering cross section of the composite structure of 90% over a broad frequency band of nearly 20 THz, and the infrared cloaking frequency can be tuned by the external temperature. It can provide a feasible way to design a broadband tunable cloak.

  2. Coherent phonon optics in a chip with an electrically controlled active device.

    Science.gov (United States)

    Poyser, Caroline L; Akimov, Andrey V; Campion, Richard P; Kent, Anthony J

    2015-02-05

    Phonon optics concerns operations with high-frequency acoustic waves in solid media in a similar way to how traditional optics operates with the light beams (i.e. photons). Phonon optics experiments with coherent terahertz and sub-terahertz phonons promise a revolution in various technical applications related to high-frequency acoustics, imaging, and heat transport. Previously, phonon optics used passive methods for manipulations with propagating phonon beams that did not enable their external control. Here we fabricate a phononic chip, which includes a generator of coherent monochromatic phonons with frequency 378 GHz, a sensitive coherent phonon detector, and an active layer: a doped semiconductor superlattice, with electrical contacts, inserted into the phonon propagation path. In the experiments, we demonstrate the modulation of the coherent phonon flux by an external electrical bias applied to the active layer. Phonon optics using external control broadens the spectrum of prospective applications of phononics on the nanometer scale.

  3. Electric engineering introduction

    International Nuclear Information System (INIS)

    An, Byeong Won; Eom, Sang Ho

    1999-03-01

    It is divided into nine chapters, which includes electricity theory such as structure of material and current, nature of electricity, static, magnetic force and magnetic attraction, attraction of current and a storage battery, electric circuit on a direct current circuit, single phase circuit and 3-phase current circuit electricity machine like DC generator, DC motor, alternator, electric transformer, single-phase induction motor, 3-phase induction motor, synchronous motor, synchro electric machine, semiconductor such as diode, transistor, FET, UJT, silicon symmetrical switch, electronic circuit like smoothing circuit and Bistable MV. circuit, automatic control, measurement of electricity, electric application and safety.

  4. Structure and method for controlling band offset and alignment at a crystalline oxide-on-semiconductor interface

    Science.gov (United States)

    McKee, Rodney A.; Walker, Frederick J.

    2003-11-25

    A crystalline oxide-on-semiconductor structure and a process for constructing the structure involves a substrate of silicon, germanium or a silicon-germanium alloy and an epitaxial thin film overlying the surface of the substrate wherein the thin film consists of a first epitaxial stratum of single atomic plane layers of an alkaline earth oxide designated generally as (AO).sub.n and a second stratum of single unit cell layers of an oxide material designated as (A'BO.sub.3).sub.m so that the multilayer film arranged upon the substrate surface is designated (AO).sub.n (A'BO.sub.3).sub.m wherein n is an integer repeat of single atomic plane layers of the alkaline earth oxide AO and m is an integer repeat of single unit cell layers of the A'BO.sub.3 oxide material. Within the multilayer film, the values of n and m have been selected to provide the structure with a desired electrical structure at the substrate/thin film interface that can be optimized to control band offset and alignment.

  5. Depletion field focusing in semiconductors

    NARCIS (Netherlands)

    Prins, M.W.J.; Gelder, Van A.P.

    1996-01-01

    We calculate the three-dimensional depletion field profile in a semiconductor, for a planar semiconductor material with a spatially varying potential upon the surface, and for a tip-shaped semiconductor with a constant surface potential. The nonuniform electric field gives rise to focusing or

  6. Enhanced electrical properties of oxide semiconductor thin-film transistors with high conductivity thin layer insertion for the channel region

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen, Cam Phu Thi; Raja, Jayapal; Kim, Sunbo; Jang, Kyungsoo; Le, Anh Huy Tuan; Lee, Youn-Jung; Yi, Junsin, E-mail: junsin@skku.edu

    2017-02-28

    Highlights: • The characteristics of thin film transistors using double active layers are examined. • Electrical characteristics have been improved for the double active layers devices. • The total trap density can be decreased by insert-ion of ultrathin ITO film. - Abstract: This study examined the performance and the stability of indium tin zinc oxide (ITZO) thin film transistors (TFTs) by inserting an ultra-thin indium tin oxide (ITO) layer at the active/insulator interface. The electrical properties of the double channel device (ITO thickness of 5 nm) were improved in comparison with the single channel ITZO or ITO devices. The TFT characteristics of the device with an ITO thickness of less than 5 nm were degraded due to the formation of an island-like morphology and the carriers scattering at the active/insulator interface. The 5 nm-thick ITO inserted ITZO TFTs (optimal condition) exhibited a superior field effect mobility (∼95 cm{sup 2}/V·s) compared with the ITZO-only TFTs (∼34 cm{sup 2}/V·s). The best characteristics of the TFT devices with double channel layer are due to the lowest surface roughness (0.14 nm) and contact angle (50.1°) that result in the highest hydrophicility, and the most effective adhesion at the surface. Furthermore, the threshold voltage shifts for the ITO/ITZO double layer device decreased to 0.80 and −2.39 V compared with 6.10 and −6.79 V (for the ITZO only device) under positive and negative bias stress, respectively. The falling rates of E{sub A} were 0.38 eV/V and 0.54 eV/V for the ITZO and ITO/ITZO bi-layer devices, respectively. The faster falling rate of the double channel devices suggests that the trap density, including interface trap and semiconductor bulk trap, can be decreased by the ion insertion of a very thin ITO film into the ITZO/SiO{sub 2} reference device. These results demonstrate that the double active layer TFT can potentially be applied to the flat panel display.

  7. Doping of organic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Luessem, B.; Riede, M.; Leo, K. [Institut fuer Angewandte Photophysik, TU Dresden (Germany)

    2013-01-15

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. Doping of organic semiconductors

    International Nuclear Information System (INIS)

    Luessem, B.; Riede, M.; Leo, K.

    2013-01-01

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Carrier-lifetime-controlled selective etching process for semiconductors using photochemical etching

    International Nuclear Information System (INIS)

    Ashby, C.I.H.; Myers, D.R.

    1992-01-01

    This patent describes a process for selectively photochemically etching a semiconductor material. It comprises introducing at least one impurity into at least one selected region of a semiconductor material to be etched to increase a local impurity concentration in the at least one selected region relative to an impurity concentration in regions of the semiconductor material adjacent thereto, for reducing minority carrier lifetimes within the at least one selected region relative to the adjacent regions for thereby providing a photochemical etch-inhibiting mask at the at least one selected region; and etching the semiconductor material by subjecting the surface of the semiconductor material to a carrier-driven photochemical etching reaction for selectively etching the regions of the semiconductor material adjacent the at least one selected region having the increase impurity concentration; wherein the step of introducing at least one impurity is performed so as not to produce damage to the at least one selected region before any etching is performed

  10. Gain transient control for wavelength division multiplexed access networks using semiconductor optical amplifiers

    DEFF Research Database (Denmark)

    Gibbon, Timothy Braidwood; Osadchiy, Alexey Vladimirovich; Kjær, Rasmus

    2009-01-01

    Gain transients can severely hamper the upstream network performance in wavelength division multiplexed (WDM) access networks featuring erbium doped fiber amplifiers (EDFAs) or Raman amplification. We experimentally demonstrate for the first time using 10 Gb/s fiber transmission bit error rate...... measurements how a near-saturated semiconductor optical amplifier (SOA) can be used to control these gain transients. An SOA is shown to reduce the penalty of transients originating in an EDFA from 2.3 dB to 0.2 dB for 10 Gb/s transmission over standard single mode fiber using a 231-1 PRBS pattern. The results...... suggest that a single SOA integrated within a WDM receiver at the metro node could offer a convenient all-optical solution for upstream transient controlin WDM access networks....

  11. Stability diagrams for continuous wide-range control of two mutually delay-coupled semiconductor lasers

    International Nuclear Information System (INIS)

    Junges, Leandro; Gallas, Jason A C

    2015-01-01

    The dynamics of two mutually delay-coupled semiconductor lasers has been frequently studied experimentally, numerically, and analytically either for weak or strong detuning between the lasers. Here, we present a systematic numerical investigation spanning all detuning ranges. We report high-resolution stability diagrams for wide ranges of the main control parameters of the laser, as described by the Lang–Kobayashi model. In particular, we detail the parameter influence on dynamical performance and map the distribution of chaotic pulsations and self-generated periodic spiking with arbitrary periodicity. Special attention is given to the unfolding of regular pulse packages for both symmetric and non-symmetric configurations with respect to detuning. The influence of the delay –time on the self-organization of periodic and chaotic laser phases as a function of the coupling and detuning is also described in detail. (paper)

  12. On-demand semiconductor source of 780-nm single photons with controlled temporal wave packets

    Science.gov (United States)

    Béguin, Lucas; Jahn, Jan-Philipp; Wolters, Janik; Reindl, Marcus; Huo, Yongheng; Trotta, Rinaldo; Rastelli, Armando; Ding, Fei; Schmidt, Oliver G.; Treutlein, Philipp; Warburton, Richard J.

    2018-05-01

    We report on a fast, bandwidth-tunable single-photon source based on an epitaxial GaAs quantum dot. Exploiting spontaneous spin-flip Raman transitions, single photons at 780 nm are generated on demand with tailored temporal profiles of durations exceeding the intrinsic quantum dot lifetime by up to three orders of magnitude. Second-order correlation measurements show a low multiphoton emission probability [g2(0 ) ˜0.10 -0.15 ] at a generation rate up to 10 MHz. We observe Raman photons with linewidths as low as 200 MHz, which is narrow compared to the 1.1-GHz linewidth measured in resonance fluorescence. The generation of such narrow-band single photons with controlled temporal shapes at the rubidium wavelength is a crucial step towards the development of an optimized hybrid semiconductor-atom interface.

  13. Frequency response control of semiconductor laser by using hybrid modulation scheme.

    Science.gov (United States)

    Mieda, Shigeru; Yokota, Nobuhide; Isshiki, Ryuto; Kobayashi, Wataru; Yasaka, Hiroshi

    2016-10-31

    A hybrid modulation scheme that simultaneously applies the direct current modulation and intra-cavity loss modulation to a semiconductor laser is proposed. Both numerical calculations using rate equations and experiments using a fabricated laser show that the hybrid modulation scheme can control the frequency response of the laser by changing a modulation ratio and time delay between the two modulations. The modulation ratio and time delay provide the degree of signal mixing of the two modulations and an optimum condition is found when a non-flat frequency response for the intra-cavity loss modulation is compensated by that for the direct current modulation. We experimentally confirm a 8.64-dB improvement of the modulation sensitivity at 20 GHz compared with the pure direct current modulation with a 0.7-dB relaxation oscillation peak.

  14. Increasing Mn substitution in magnetic semiconductors through controlled ambient annealing processes

    Energy Technology Data Exchange (ETDEWEB)

    Hollingsworth, J. [Materials Science Program, Department of Mechanical and Aerospace Engineering, UC San Diego, La Jolla, CA 92093-0411 (United States); Bandaru, P.R. [Materials Science Program, Department of Mechanical and Aerospace Engineering, UC San Diego, La Jolla, CA 92093-0411 (United States)], E-mail: pbandaru@ucsd.edu

    2008-06-25

    We report on a controlled ambient annealing technique aimed at increasing the amount of Mn incorporation in III-V semiconductors. The aim is to reduce the number of hole carrier and magnetic element compensating entities, such as Mn interstitials and anti-site defects, to increase the magnetic Curie temperature. The idea is (a) to increase the number of Group III vacancies through annealing in Group V vapor rich conditions and (b) judicious use of crystal field theory to reduce/stabilize Mn interstitials. Our experimental results constitute the highest reportedT{sub c} ({approx}130 K) in Mn doped InSb and Mn doped InP. The possibility of ferrimagnetism in Mn and Cr incorporated GaAs, was noted.

  15. Semiconductor Physical Electronics

    CERN Document Server

    Li, Sheng

    2006-01-01

    Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

  16. Controlled fabrication of semiconductor-metal hybrid nano-heterostructures via site-selective metal photodeposition

    Science.gov (United States)

    Vela Becerra, Javier; Ruberu, T. Purnima A.

    2017-12-05

    A method of synthesizing colloidal semiconductor-metal hybrid heterostructures is disclosed. The method includes dissolving semiconductor nanorods in a solvent to form a nanorod solution, and adding a precursor solution to the nanorod solution. The precursor solution contains a metal. The method further includes illuminating the combined precursor and nanorod solutions with light of a specific wavelength. The illumination causes the deposition of the metal in the precursor solution onto the surface of the semiconductor nanorods.

  17. ZnO Coatings with Controlled Pore Size, Crystallinity and Electrical Conductivity

    Directory of Open Access Journals (Sweden)

    Roman SCHMACK

    2016-05-01

    Full Text Available Zinc oxide is a wide bandgap semiconductor with unique optical, electrical and catalytic properties. Many of its practical applications rely on the materials pore structure, crystallinity and electrical conductivity. We report a synthesis method for ZnO films with ordered mesopore structure and tuneable crystallinity and electrical conductivity. The synthesis relies on dip-coating of solutions containing micelles of an amphiphilic block copolymer and complexes of Zn2+ ions with aliphatic ligands. A subsequent calcination at 400°C removes the template and induces crystallization of the pore walls. The pore structure is controlled by the template polymer, whereas the aliphatic ligands control the crystallinity of the pore walls. Complexes with a higher thermal stability result in ZnO films with a higher content of residual carbon, smaller ZnO crystals and therefore lower electrical conductivity. The paper discusses the ability of different types of ligands to assist in the synthesis of mesoporous ZnO and relates the structure and thermal stability of the precursor complexes to the crystallinity and electrical conductivity of the zinc oxide.DOI: http://dx.doi.org/10.5755/j01.ms.22.1.8634

  18. Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

    KAUST Repository

    Rojas, Jhonathan Prieto

    2013-02-12

    In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry\\'s most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m−1), optically semi-transparent silicon fabric (1.5 cm × 3 cm × 25 μm). The electrical characteristics show 3.7 nm effective oxide thickness, −0.2 V flat band voltage, and no hysteresis from the fabricated MOSCAPs.

  19. Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

    KAUST Repository

    Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa; Sevilla, Galo T.

    2013-01-01

    In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry's most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m−1), optically semi-transparent silicon fabric (1.5 cm × 3 cm × 25 μm). The electrical characteristics show 3.7 nm effective oxide thickness, −0.2 V flat band voltage, and no hysteresis from the fabricated MOSCAPs.

  20. Bottom-up nanoarchitecture of semiconductor nano-building blocks by controllable in situ SEM-FIB thermal soldering method

    KAUST Repository

    Zhang, Xuan

    2017-08-10

    Here we demonstrate that the building blocks of semiconductor WO3 nanowires can be controllably soldered together by a novel nano-soldering technique of in situ SEM-FIB thermal soldering, in which the soldering temperature can precisely remain in an optimal range to avoid a strong thermal diffusion.

  1. Bottom-up nanoarchitecture of semiconductor nano-building blocks by controllable in situ SEM-FIB thermal soldering method

    KAUST Repository

    Zhang, Xuan; Zheng, Xiujun; Zhang, Hong; Zhang, Junli; Fu, Jiecai; Zhang, Qiang; Peng, Chaoyi; Bai, Feiming; Zhang, Xixiang; Peng, Yong

    2017-01-01

    Here we demonstrate that the building blocks of semiconductor WO3 nanowires can be controllably soldered together by a novel nano-soldering technique of in situ SEM-FIB thermal soldering, in which the soldering temperature can precisely remain in an optimal range to avoid a strong thermal diffusion.

  2. Microwave phase shifter with controllable power response based on slow- and fast-light effects in semiconductor optical amplifiers.

    Science.gov (United States)

    Xue, Weiqi; Sales, Salvador; Capmany, José; Mørk, Jesper

    2009-04-01

    We suggest and experimentally demonstrate a method for increasing the tunable rf phase shift of semiconductor waveguides while at the same time enabling control of the rf power. This method is based on the use of slow- and fast-light effects in a cascade of semiconductor optical amplifiers combined with the use of spectral filtering to enhance the role of refractive index dynamics. A continuously tunable phase shift of approximately 240 degrees at a microwave frequency of 19 GHz is demonstrated in a cascade of two semiconductor optical amplifiers, while maintaining an rf power change of less than 1.6 dB. The technique is scalable to more amplifiers and should allow realization of an rf phase shift of 360 degrees.

  3. Electric Field Modulation of Semiconductor Quantum Dot Photoluminescence: Insights Into the Design of Robust Voltage-Sensitive Cellular Imaging Probes.

    Science.gov (United States)

    Rowland, Clare E; Susumu, Kimihiro; Stewart, Michael H; Oh, Eunkeu; Mäkinen, Antti J; O'Shaughnessy, Thomas J; Kushto, Gary; Wolak, Mason A; Erickson, Jeffrey S; Efros, Alexander L; Huston, Alan L; Delehanty, James B

    2015-10-14

    The intrinsic properties of quantum dots (QDs) and the growing ability to interface them controllably with living cells has far-reaching potential applications in probing cellular processes such as membrane action potential. We demonstrate that an electric field typical of those found in neuronal membranes results in suppression of the QD photoluminescence (PL) and, for the first time, that QD PL is able to track the action potential profile of a firing neuron with millisecond time resolution. This effect is shown to be connected with electric-field-driven QD ionization and consequent QD PL quenching, in contradiction with conventional wisdom that suppression of the QD PL is attributable to the quantum confined Stark effect.

  4. Electric system training with programmable controllers

    International Nuclear Information System (INIS)

    Benson, M.B.

    1989-01-01

    A power system simulator (PSS) for training system operators has been opened at the Pacific Gas and Electric Training Center at San Ramon, California. The simulator was designed as an instructional aid and is part of a larger, more comprehensive operating training facility. It has the capability of duplicating both routine and emergency situations for transmission and distribution lines, power plants, and substations. Modeled after nuclear plant simulators, the PSS utilizes state-of-the-art technology and is believed to be on the leading edge of power system simulators. The new operator training facility covers 10,000 ft/sup 2/ and is divided into four classrooms, two labs, three simulated dispatch centers, and various administrative offices. Ten full- and part-time instructors are on staff to train the over 900 system, power plant, agency, and trainee personnel. The simulator is considered the heart of the complex and covers over half of the available floor space. It is divided into two large rooms and further separated by the dispatch centers. The indoor room represents the high-voltage transmission and generating stations, the outdoor room is for both the lower-voltage distribution system and simulated physical equipment. In each room, full-size control boards (equipped with actual relay protection and automatic schemes) are arranged into various stations and lines

  5. Controlled fabrication of electrically contacted carbon nanoscrolls

    Science.gov (United States)

    Schmidt, Marek E.; Hammam, Ahmed M. M.; Iwasaki, Takuya; Kanzaki, Teruhisa; Muruganathan, Manoharan; Ogawa, Shinichi; Mizuta, Hiroshi

    2018-06-01

    Carbon nanoscrolls (CNS) with their open ended morphology have recently attracted interest due to the potential application in gas capture, biosensors and interconnects. However, CNS currently suffer from the same issue that have hindered widespread integration of CNTs in sensors and devices: formation is done ex situ, and the tubes have to be placed with precision and reliability—a difficult task with low yield. Here, we demonstrate controlled in situ formation of electrically contacted CNS from suspended graphene nanoribbons with slight tensile stress. Formation probability depends on the length to width aspect ratio. Van der Waals interaction between the overlapping layers fixes the nanoscroll once formed. The stability of these CNSs is investigated by helium nano ion beam assisted in situ cutting. The loose stubs remain rolled and mostly suspended unless subject to a moderate helium dose corresponding to a damage rate of 4%–20%. One CNS stub remaining perfectly straight even after touching the SiO2 substrate allows estimation of the bending moment due to van der Waals force between the CNS and the substrate. The bending moment of 5400 eV is comparable to previous theoretical studies. The cut CNSs show long-term stability when not touching the substrate.

  6. Controlling the emission wavelength in group III-V semiconductor laser diodes

    KAUST Repository

    Ooi, Boon S.; Majid, Mohammed Abdul; Afandy, Rami; Aljabr, Ahmad

    2016-01-01

    Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III

  7. Controlling the emission wavelength in group III-V semiconductor laser diodes

    KAUST Repository

    Ooi, Boon S.

    2016-12-29

    Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III-V semiconductor quantum wells. The group III-V semiconductor can include AlSb, AlAs, Aln, AlP, BN, GaSb, GaAs, GaN, GaP, InSb, InAs, InN, and InP, and group III-V ternary semiconductors alloys such as AlxGai.xAs. The methods can results in a blue shifting of about 20 meV to 350 meV, which can be used for example to make group III-V semiconductor quantum well laser diodes with an emission that is orange or yellow. Methods of making semiconductor quantum well laser diodes and semiconductor quantum well laser diodes made therefrom are also provided.

  8. Introduction to the Control of Electric Motors.

    Science.gov (United States)

    Spencer, Frederick

    The fundamentals of electric circuits and electric machines are presented in the text, with an emphasis on the practical operation rather than on mathematical analyses of theories involved. The material contained in the text includes the fundamentals of both D.C. and A.C. circuits together with the principles of magnetism and electro-magnetic…

  9. Distributed control of deregulated electrical power networks

    NARCIS (Netherlands)

    Hermans, R.M.

    2012-01-01

    A prerequisite for reliable operation of electrical power networks is that supply and demand are balanced at all time, as efficient ways for storing large amounts of electrical energy are scarce. Balancing is challenging, however, due to the power system's dimensions and complexity, the low

  10. Semiconductor device comprising a pn-heterojunction

    NARCIS (Netherlands)

    2007-01-01

    An electric device is disclosed comprising a pn-heterojunction ( 4 ) formed by a nanowire ( 3 ) of 111 -V semiconductor material and a semiconductor body ( 1 ) comprising a group IV semiconductor material. The nanowire ( 3 ) is positioned in direct contact with the surface ( 2 ) of the semiconductor

  11. Modeling and Nonlinear Control of Electric Power Stage in Hybrid Electric Vehicle

    DEFF Research Database (Denmark)

    Tahri, A.; El Fadil, H.; Guerrero, Josep M.

    2014-01-01

    This paper deals with the problem of modeling and controlling the electric power stage of hybrid electric vehicle. The controlled system consists of a fuel cell (FC) as a main source, a supercapacitor as an auxiliary source, two DC-DC power converters, an inverter and a traction induction motor...

  12. Electric control of wave vector filtering in a hybrid magnetic-electric-barrier nanostructure

    Science.gov (United States)

    Kong, Yong-Hong; Lu, Ke-Yu; He, Ya-Ping; Liu, Xu-Hui; Fu, Xi; Li, Ai-Hua

    2018-06-01

    We theoretically investigate how to manipulate the wave vector filtering effect by a traverse electric field for electrons across a hybrid magnetic-electric-barrier nanostructure, which can be experimentally realized by depositing a ferromagnetic stripe and a Schottky-metal stripe on top and bottom of a GaAs/Al x Ga1- x As heterostructure, respectively. The wave vector filtering effect is found to be related closely to the applied electric field. Moreover, the wave vector filtering efficiency can be manipulated by changing direction or adjusting strength of the traverse electric field. Therefore, such a nanostructure can be employed as an electrically controllable electron-momentum filter for nanoelectronics applications.

  13. Intelligent Control Of An Electric Vehicle ICEV

    Directory of Open Access Journals (Sweden)

    Taoufik Chaouachi

    2017-01-01

    Full Text Available The electric vehicle allows fast gentle quiet and environmentally friendly movements in industrial and urban environments. The automotive industry has seen the opportunity to revive its production by replacing existing vehicles due to the reluctance of oil reserves around the world. In order to greatly reduce countries dependence on oil strategic sectors such as transport must increasingly integrate technologies based primarily on clean and renewable energy. Governments must implement large-scale measures to equip themselves with electric vehicles and build large recharge networks. The traditional system for conversions of conventional vehicles into electric vehicles consists of replacing the internal combustion engine and the gearbox with electrical components engine and gearbox or engine and gearbox retaining the rest of the elements Transmission transmission shafts etc..

  14. Predictive cruise control in hybrid electric vehicles

    NARCIS (Netherlands)

    Keulen, T. van; Naus, M.J.G.; Jager, B. de; Molengraft, G.J.L. van de; Steinbuch, M.; Aneke, N.P.I.

    2009-01-01

    Deceleration rates have considerable influence on the fuel economy of hybrid electric vehicles. Given the vehicle characteristics and actual/measured operating conditions, as well as upcoming route information, optimal velocity trajectories can be constructed that maximize energy recovery. To

  15. Electric vehicle regenerative antiskid braking and traction control system

    Science.gov (United States)

    Cikanek, Susan R.

    1995-01-01

    An antiskid braking and traction control system for an electric or hybrid vehicle having a regenerative braking system operatively connected to an electric traction motor, and a separate hydraulic braking system includes one or more sensors for monitoring present vehicle parameters and a processor, responsive to the sensors, for calculating vehicle parameters defining the vehicle behavior not directly measurable by the sensors and determining if regenerative antiskid braking control, requiring hydrualic braking control, or requiring traction control are required. The processor then employs a control strategy based on the determined vehicle state and provides command signals to a motor controller to control the operation of the electric traction motor and to a brake controller to control fluid pressure applied at each vehicle wheel to provide the appropriate regenerative antiskid braking control, hydraulic braking control, and traction control.

  16. Electric vehicle regenerative antiskid braking and traction control system

    Science.gov (United States)

    Cikanek, S.R.

    1995-09-12

    An antiskid braking and traction control system for an electric or hybrid vehicle having a regenerative braking system operatively connected to an electric traction motor, and a separate hydraulic braking system includes one or more sensors for monitoring present vehicle parameters and a processor, responsive to the sensors, for calculating vehicle parameters defining the vehicle behavior not directly measurable by the sensors and determining if regenerative antiskid braking control, requiring hydraulic braking control, or requiring traction control are required. The processor then employs a control strategy based on the determined vehicle state and provides command signals to a motor controller to control the operation of the electric traction motor and to a brake controller to control fluid pressure applied at each vehicle wheel to provide the appropriate regenerative antiskid braking control, hydraulic braking control, and traction control. 10 figs.

  17. Traction control of an electric formula student racing car

    NARCIS (Netherlands)

    Loof, J.W.; Besselink, I.J.M.; Nijmeijer, H.

    2014-01-01

    This article describes the design of a traction control system in an electric Formula Student vehicle. In many race applications the accelerator pedal is difficult to control for an in-experienced driver, especially in the case of electric vehicles, where a large torque is available from standstill.

  18. Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics

    Science.gov (United States)

    Rogers, John A; Meitl, Matthew; Sun, Yugang; Ko, Heung Cho; Carlson, Andrew; Choi, Won Mook; Stoykovich, Mark; Jiang, Hanqing; Huang, Yonggang; Nuzzo, Ralph G; Zhu, Zhengtao; Menard, Etienne; Khang, Dahl-Young

    2014-05-20

    In an aspect, the present invention provides stretchable, and optionally printable, components such as semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed, and related methods of making or tuning such stretchable components. Stretchable semiconductors and electronic circuits preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention are adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

  19. Electronic Properties of Metallic Nanoclusters on Semiconductor Surfaces: Implications for Nanoelectronic Device Applications

    International Nuclear Information System (INIS)

    Lee, Takhee; Liu Jia; Chen, N.-P.; Andres, R.P.; Janes, D.B.; Reifenberger, R.

    2000-01-01

    We review current research on the electronic properties of nanoscale metallic islands and clusters deposited on semiconductor substrates. Reported results for a number of nanoscale metal-semiconductor systems are summarized in terms of their fabrication and characterization. In addition to the issues faced in large-area metal-semiconductor systems, nano-systems present unique challenges in both the realization of well-controlled interfaces at the nanoscale and the ability to adequately characterize their electrical properties. Imaging by scanning tunneling microscopy as well as electrical characterization by current-voltage spectroscopy enable the study of the electrical properties of nanoclusters/semiconductor systems at the nanoscale. As an example of the low-resistance interfaces that can be realized, low-resistance nanocontacts consisting of metal nanoclusters deposited on specially designed ohmic contact structures are described. To illustrate a possible path to employing metal/semiconductor nanostructures in nanoelectronic applications, we also describe the fabrication and performance of uniform 2-D arrays of such metallic clusters on semiconductor substrates. Using self-assembly techniques involving conjugated organic tether molecules, arrays of nanoclusters have been formed in both unpatterned and patterned regions on semiconductor surfaces. Imaging and electrical characterization via scanning tunneling microscopy/spectroscopy indicate that high quality local ordering has been achieved within the arrays and that the clusters are electronically coupled to the semiconductor substrate via the low-resistance metal/semiconductor interface

  20. Electric vehicle charge planning using Economic Model Predictive Control

    DEFF Research Database (Denmark)

    Halvgaard, Rasmus; Poulsen, Niels K.; Madsen, Henrik

    2012-01-01

    Economic Model Predictive Control (MPC) is very well suited for controlling smart energy systems since electricity price and demand forecasts are easily integrated in the controller. Electric vehicles (EVs) are expected to play a large role in the future Smart Grid. They are expected to provide...... grid services, both for peak reduction and for ancillary services, by absorbing short term variations in the electricity production. In this paper the Economic MPC minimizes the cost of electricity consumption for a single EV. Simulations show savings of 50–60% of the electricity costs compared...... to uncontrolled charging from load shifting based on driving pattern predictions. The future energy system in Denmark will most likely be based on renewable energy sources e.g. wind and solar power. These green energy sources introduce stochastic fluctuations in the electricity production. Therefore, energy...

  1. Electrohydrodynamic simulation of electrically controlled droplet generation

    International Nuclear Information System (INIS)

    Ouedraogo, Yun; Gjonaj, Erion; Weiland, Thomas; Gersem, Herbert De; Steinhausen, Christoph; Lamanna, Grazia; Weigand, Bernhard

    2017-01-01

    Highlights: • We develop a full electrohydrodynamic simulation approach which allows for the accurate modeling of droplet dynamics under the influence of transient electric fields. The model takes into account conductive, capacitive as well as convective electrical currents in the fluid. • Simulation results are shown for an electrically driven droplet generator using highly conductive acetone droplets and low conductivity pentane droplets, respectively. Excellent agreement with measurement is found. • We investigate the operation characteristic of the droplet generator by computing droplet sizes and detachment times with respect to the applied voltage. • The droplet charging effect is demonstrated for pentane droplets as well as for acetone droplets under long voltage pulses. We show that due to the very different relaxation times, the charging behavior of the two liquids is very different. • We demonstrate that due to this behavior, also the detachment mechanisms for acetone and pentane droplets are different. For low conductivity (pentane) droplets, droplet detachment is only possible after the electric fields are switched off. This is because the effective electric polarization force points upwards, thus, inhibiting the detachment of the droplet from the capillary tip. - Abstract: An electrohydrodynamic model for the simulation of droplet formation, detachment and motion in an electrically driven droplet generator is introduced. The numerical approach is based on the coupled solution of the multiphase flow problem with the charge continuity equation. For the latter, a modified convection-conduction model is applied, taking into account conductive, capacitive as well as convective electrical currents in the fluid. This allows for a proper description of charge relaxation phenomena in the moving fluid. In particular, the charge received by the droplet after detachment is an important parameter influencing the droplet dynamics in the test chamber

  2. Terahertz semiconductor nonlinear optics

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

    2013-01-01

    In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz...... nonlinearity in doped semiconductors originates from the near-instantaneous heating of free electrons in the ponderomotive potential created by electric field of the THz pulse, leading to ultrafast increase of electron effective mass by intervalley scattering. Modification of effective mass in turn leads...... to a decrease of plasma frequency in semiconductor and produces a substantial modification of THz-range material dielectric function, described by the Drude model. As a result, the nonlinearity of both absorption coefficient and refractive index of the semiconductor is observed. In particular we demonstrate...

  3. Memory characteristics of Au nanocrystals embedded in metal-oxide-semiconductor structure by using atomic-layer-deposited Al2O3 as control oxide

    International Nuclear Information System (INIS)

    Wang, C.-C.; Chiou, Y.-K.; Chang, C.-H.; Tseng, J.-Y.; Wu, L.-J.; Chen, C.-Y.; Wu, T.-B.

    2007-01-01

    The nonvolatile memory characteristics of metal-oxide-semiconductor (MOS) structures containing Au nanocrystals in the Al 2 O 3 /SiO 2 matrix were studied. In this work, we have demonstrated that the use of Al 2 O 3 as control oxide prepared by atomic-layer-deposition enhances the erase speed of the MOS capacitors. A giant capacitance-voltage hysteresis loop and a very short erase time which is lower than 1 ms can be obtained. Compared with the conventional floating-gate electrically erasable programmable read-only memories, the erase speed was promoted drastically. In addition, very low leakage current and large turn-around voltage resulting from electrons or holes stored in the Au nanocrystals were found in the current-voltage relation of the MOS capacitors

  4. Rational design of organic semiconductors for texture control and self-patterning on halogenated surfaces

    KAUST Repository

    Ward, Jeremy W.; Li, Ruipeng; Obaid, Abdulmalik; Payne, Marcia M.; Smilgies, Detlef Matthias; Anthony, John Edward; Amassian, Aram; Jurchescu, Oana D.

    2014-01-01

    new materials. Here, the influence of the interactions at the interface between a halogenated organic semiconductor (OSC) thin film and a halogenated self-assembled monolayer on the formation of the crystalline texture directly affecting

  5. Compact electrically controlled broadband liquid crystal photonic bandgap fiber polarizer

    DEFF Research Database (Denmark)

    Wei, Lei; Alkeskjold, Thomas Tanggaard; Bjarklev, Anders Overgaard

    2009-01-01

    An electrically controlled liquid crystal photonic-bandgap fiber polarizer is experimentally demonstrated. A maximum 21.3dB electrically tunable polarization extinction ratio is achieved with 45° rotatable transmission axis as well as switched on and off in 1300nm–1600nm.......An electrically controlled liquid crystal photonic-bandgap fiber polarizer is experimentally demonstrated. A maximum 21.3dB electrically tunable polarization extinction ratio is achieved with 45° rotatable transmission axis as well as switched on and off in 1300nm–1600nm....

  6. Electrically assisted forming modeling and control

    CERN Document Server

    Salandro, Wesley A; Bunget, Cristina; Mears, Laine; Roth, John T

    2015-01-01

    Maximizing reader insights into the latest research findings and applications of Electrically-Assisted Forming (EAF) – whereby metals are formed under an electric current field – this book explains how such a process produces immediate improved formability of metals beyond the extent of thermal softening, and allows metals to be formed to greater elongation with lower mechanical energy as well as allowing for lightweight brittle metals such as magnesium and titanium to be formed without external heating or annealing, enabling the more effective use of these lightweight metals in design. Including case studies that illustrate and support the theoretical content and real-world applications of the techniques discussed, this book also serves to enrich readers understanding of the underlying theories that influence electro-plastic behaviour. The authors have extensive experience in studying Electrically-Assisted Forming and have written extensively on the topic with publications including experimental works, t...

  7. Dynamics and control of electrical drives

    Energy Technology Data Exchange (ETDEWEB)

    Wach, Piotr [Politechnika Opolska, Opole (Poland). Inst. of Electromechanical Systems and Applied Informatics

    2011-07-01

    Dynamics is a science concerned with movement and changes. In the most general approach it relates to life processes as well as behavior in nature in rest. It governs small particles, technical objects, conversion of matter and materials but also concerns people, groups of people in their individual and, in particular, social dimension. In dynamics we always have to do with causes or stimuli for motion, the rules of reaction or behavior and its result in the form of trajectory of changes. This book is devoted to dynamics of a wide class of specific but very important objects such as electromechanical systems. This is a very rigorous discipline and has a long tradition, as its theoretical bases were formulated in the first half of the XIX century by d' Alembert, Lagrange, Hamilton, Maxwell and other prominent scientists, but their crucial results were based on previous pioneering research of others such as Copernicus, Galileo, Newton..This book in its theoretical foundations is based on the principle of least action which governs classical as well as relativistic mechanics and electromagnetism and leads to Lagrange's equations which are applied in the book as universal method to construct equations of motion of electromechanical systems. It gives common and coherent grounds to formulate mathematical models for all lumped parameters' electromechanical systems, which are vital in our contemporary industry and civilized everyday life. From these remarks it seems that the book is general and theoretical but in fact it is a very practical one concerning modern electrical drives in a broad sense, including electromechanical energy conversion, induction motor drives, brushless DC drives with a permanent magnet excitation and switched reluctance machines (SRM). And of course their control, which means shaping of their trajectories of motion using modern tools, their designed autonomy in keeping a track according to our programmed expectations. The problems

  8. Controlling the speed of light in semiconductor waveguides: Physics and applications

    DEFF Research Database (Denmark)

    Mørk, Jesper; Xue, Weiqi; Chen, Yaohui

    2009-01-01

    We review the physics of slow and fast light effects in semiconductor optical waveguides. Recent experimental and theoretical results on enhancing the phase shift using optical filtering are presented and applications in microwave photonics are discussed.......We review the physics of slow and fast light effects in semiconductor optical waveguides. Recent experimental and theoretical results on enhancing the phase shift using optical filtering are presented and applications in microwave photonics are discussed....

  9. Corrosion control in electric power plants

    International Nuclear Information System (INIS)

    Syrett, B.C.

    1992-01-01

    This paper reports that corrosion of components in power plants costs the US electric power utility industry billions of dollars each year. Through the Electric Power Research Institute's (EPRI) research and development, several approaches have been developed to reduce these huge costs. They include improved materials selection procedures, coatings, cathodic protection, inhibitors, removal of aggressive species from the environment, and on-line corrosion monitoring. In addition, as part of an on-going technology transfer effort, EPRI is developing databases and expert systems that will help utilities obtain corrosion information and guide them in materials selection and failure analysis

  10. Quantum well saturable absorber mirror with electrical control of modulation depth

    DEFF Research Database (Denmark)

    Liu, Xiaomin; Rafailov, Edik U.; Livshits, Daniil

    2010-01-01

    in the range 2.5–0.5%, as measured by nonlinear reflectivity of 450 fs long laser pulses with 1065 nm central wavelength, in the pump fluence range 1.6–26.7 J /cm2. This electrical control of the modulation depth is achieved by controlling the small-signal loss of the SESAM via quantum-confined Stark effect......We demonstrate a quantum well QW semiconductor saturable absorber mirror SESAM comprising low-temperature grown InGaAs/GaAs QWs incorporated into a p-i-n structure. By applying the reverse bias voltage in the range 0–2 V to the p-i-n structure, we were able to change the SESAM modulation depth...

  11. Multiagent based protection and control in decentralized electric power systems

    DEFF Research Database (Denmark)

    Saleem, Arshad; Lind, Morten; Veloso, Manuela

    2010-01-01

    Electric power systems are going through a major change both in their physical and control structure. A large num- ber of small and geographically dispersed power generation units (e.g., wind turbines, solar cells, plug-in electric cars) are replacing big centralized power plants. This shift has...... created interesting possibilities for application of intelligent systems such as multiagent systems for control and automation in electric power systems. This paper describes work on designing a multiagent system for protection and control of electric power distribution networks.It demonstrates how...... explicit modeling of capabilities, states, roles and role transition in agents can capture the control and automation in electric power systems. We present illustrative results from using our proposed schema in realistic simulations....

  12. Flow-Solution-Liquid-Solid Growth of Semiconductor Nanowires: A Novel Approach for Controlled Synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Hollingsworth, Jennifer A. [Los Alamos National Laboratory; Palaniappan, Kumaranand [Los Alamos National Laboratory; Laocharoensuk, Rawiwan [National Science and Technology Center, Thailand; Smith, Nickolaus A. [Los Alamos National Laboratory; Dickerson, Robert M. [Los Alamos National Laboratory; Casson, Joanna L. [Los Alamos National Laboratory; Baldwin, Jon K. [Los Alamos National Laboratory

    2012-06-07

    Semiconductor nanowires (SC-NWs) have potential applications in diverse technologies from nanoelectronics and photonics to energy harvesting and storage due to their quantum-confined opto-electronic properties coupled with their highly anisotropic shape. Here, we explore new approaches to an important solution-based growth method known as solution-liquid-solid (SLS) growth. In SLS, molecular precursors are reacted in the presence of low-melting metal nanoparticles that serve as molten fluxes to catalyze the growth of the SC-NWs. The mechanism of growth is assumed to be similar to that of vapor-liquid-solid (VLS) growth, with the clear distinctions of being conducted in solution in the presence of coordinating ligands and at relatively lower temperatures (<300 C). The resultant SC-NWs are soluble in common organic solvents and solution processable, offering advantages such as simplified processing, scale-up, ultra-small diameters for quantum-confinement effects, and flexible choice of materials from group III-V to groups II-VI, IV-VI, as well as truly ternary I-III-VI semiconductors as we recently demonstrates. Despite these advantages of SLS growth, VLS offers several clear opportunities not allowed by conventional SLS. Namely, VLS allows sequential addition of precursors for facile synthesis of complex axial heterostructures. In addition, growth proceeds relatively slowly compared to SLS, allowing clear assessments of growth kinetics. In order to retain the materials and processing flexibility afforded by SLS, but add the elements of controlled growth afforded by VLS, we transformed SLS into a flow based method by adapting it to synthesis in a microfluidic system. By this new method - so-called 'flow-SLS' (FSLS) - we have now demonstrated unprecedented fabrication of multi-segmented SC-NWs, e.g., 8-segmented CdSe/ZnSe defined by either compositionally abrupt or alloyed interfaces as a function of growth conditions. In addition, we have studied growth

  13. Semiconductor-machine system for controlling excitation of synchronous medium power generators

    Energy Technology Data Exchange (ETDEWEB)

    Vrtikapa, G

    1982-01-01

    A system for controlling excitation (ARP-29/1) is described which was developed at the ''Nikola Tesla'' institute (Czechoslavakia) for rebuilding the Zvornik hydroelectric plant with 30 MV X A units. The system corresponds to the modern level of automation and considers positive characteristics of existing equipment, it is easily included in a technological process, has small dimensions and is easily installed during overhaul of a electric generating plant, and it allows one to obtain good economic results. Two years of use have confirmed the high reliability and quality of the excitation. The excitation control system consists of synchronous motor, excitation system, automatic control of voltage, manual control of excitation unit, unit for automatic following and switching, relay automatic device with protection and warning. The excitation system of the generator has: thyristor rectifier, thyristor converter, a bridge with thyristor control unit, machine excitation generator, switch for demagnetization. The excitation system is supplied from an electric power network or from a three phase generator with permanent magnets.

  14. Chaos in electric drive systems analysis control and application

    CERN Document Server

    Chau, K T

    2011-01-01

    In Chaos in Electric Drive Systems: Analysis, Control and Application authors Chau and Wang systematically introduce an emerging technology of electrical engineering that bridges abstract chaos theory and practical electric drives. The authors consolidate all important information in this interdisciplinary technology, including the fundamental concepts, mathematical modeling, theoretical analysis, computer simulation, and hardware implementation. The book provides comprehensive coverage of chaos in electric drive systems with three main parts: analysis, control and application. Corresponding drive systems range from the simplest to the latest types: DC, induction, synchronous reluctance, switched reluctance, and permanent magnet brushless drives.The first book to comprehensively treat chaos in electric drive systemsReviews chaos in various electrical engineering technologies and drive systemsPresents innovative approaches to stabilize and stimulate chaos in typical drivesDiscusses practical application of cha...

  15. Spin physics in semiconductors

    CERN Document Server

    2017-01-01

    This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

  16. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  17. Defects in semiconductors

    CERN Document Server

    Romano, Lucia; Jagadish, Chennupati

    2015-01-01

    This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

  18. Electrical Experiments. VT-214-12-1. Part I. Electric Motor Control.

    Science.gov (United States)

    Connecticut State Dept. of Education, Hartford. Div. of Vocational Education.

    Designed for high school electronics students, this first document in a series of six electrical learning activity packages focuses on electric motor control. An introductory section gives the objective for the activities, an introduction, and an outline of the content. The remainder of the activity book is comprised of information sheets and job…

  19. Bipolar magnetic semiconductor in silicene nanoribbons

    International Nuclear Information System (INIS)

    Farghadan, Rouhollah

    2017-01-01

    Highlights: • A new electronic phase for silicene nanoribbon in the presence of electric and magnetic fields. • Bipolar magnetic semiconductor with controllable spin-flip and spin-conserved gaps in silicene. • Robust bipolar magnetic semiconductor features in a rough silicene. • Perfect and reversible spin polarization in silicene nanoribbon junctions. - Abstract: A theoretical study was presented on generation of spin polarization in silicene nanoribbons using the single-band tight-binding approximation and the non-equilibrium Green’s function formalism. We focused on the effect of electric and exchange magnetic fields on the spin-filter capabilities of zigzag-edge silicene nanoribbons in the presence of the intrinsic spin-orbit interaction. The results show that a robust bipolar magnetic semiconductor with controllable spin-flip and spin-conserved gaps can be obtained when exchange magnetic and electric field strengths are both larger than the intrinsic spin-orbit interaction. Therefore, zigzag silicene nanoribbons could act as bipolar and perfect spin filter devices with a large spin-polarized current and a reversible spin polarization in the vicinity of the Fermi energy. We also investigated the effect of edge roughness and found that the bipolar magnetic semiconductor features are robust against edge disorder in silicene nanoribbon junctions. These results may be useful in multifunctional spin devices based on silicene nanoribbons.

  20. Bipolar magnetic semiconductor in silicene nanoribbons

    Energy Technology Data Exchange (ETDEWEB)

    Farghadan, Rouhollah, E-mail: rfarghadan@kashanu.ac.ir

    2017-08-01

    Highlights: • A new electronic phase for silicene nanoribbon in the presence of electric and magnetic fields. • Bipolar magnetic semiconductor with controllable spin-flip and spin-conserved gaps in silicene. • Robust bipolar magnetic semiconductor features in a rough silicene. • Perfect and reversible spin polarization in silicene nanoribbon junctions. - Abstract: A theoretical study was presented on generation of spin polarization in silicene nanoribbons using the single-band tight-binding approximation and the non-equilibrium Green’s function formalism. We focused on the effect of electric and exchange magnetic fields on the spin-filter capabilities of zigzag-edge silicene nanoribbons in the presence of the intrinsic spin-orbit interaction. The results show that a robust bipolar magnetic semiconductor with controllable spin-flip and spin-conserved gaps can be obtained when exchange magnetic and electric field strengths are both larger than the intrinsic spin-orbit interaction. Therefore, zigzag silicene nanoribbons could act as bipolar and perfect spin filter devices with a large spin-polarized current and a reversible spin polarization in the vicinity of the Fermi energy. We also investigated the effect of edge roughness and found that the bipolar magnetic semiconductor features are robust against edge disorder in silicene nanoribbon junctions. These results may be useful in multifunctional spin devices based on silicene nanoribbons.

  1. Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS equipment

    Directory of Open Access Journals (Sweden)

    Ann-Kathrin Kleinschmidt

    2016-11-01

    Full Text Available Reflectance anisotropy spectroscopy (RAS equipment is applied to monitor dry-etch processes (here specifically reactive ion etching (RIE of monocrystalline multilayered III–V semiconductors in situ. The related accuracy of etch depth control is better than 16 nm. Comparison with results of secondary ion mass spectrometry (SIMS reveals a deviation of only about 4 nm in optimal cases. To illustrate the applicability of the reported method in every day settings for the first time the highly etch depth sensitive lithographic process to form a film lens on the waveguide ridge of a broad area laser (BAL is presented. This example elucidates the benefits of the method in semiconductor device fabrication and also suggests how to fulfill design requirements for the sample in order to make RAS control possible.

  2. Controlling the unstable emission of a semiconductor laser subject to conventional optical feedback with a filtered feedback branch.

    Science.gov (United States)

    Ermakov, I V; Tronciu, V Z; Colet, Pere; Mirasso, Claudio R

    2009-05-25

    We show the advantages of controlling the unstable dynamics of a semiconductor laser subject to conventional optical feedback by means of a second filtered feedback branch. We give an overview of the analytical solutions of the double cavity feedback and show numerically that the region of stabilization is much larger when using a second branch with filtered feedback than when using a conventional feedback one.

  3. Controlling the unstable emission of a semiconductor laser subject to conventional optical feedback with a filtered feedback branch

    OpenAIRE

    Ermakov, Ilya; Tronciu, Vasile; Colet, Pere; Mirasso, Claudio R.

    2009-01-01

    We show the advantages of controlling the unstable dynamics of a semiconductor laser subject to conventional optical feedback by means of a second filtered feedback branch. We give an overview of the analytical solutions of the double cavity feedback and show numerically that the region of stabilization is much larger when using a second branch with filtered feedback than when using a conventional feedback one.

  4. Electric control of the heat flux through electrophononic effects

    Science.gov (United States)

    Seijas-Bellido, Juan Antonio; Aramberri, Hugo; Íñiguez, Jorge; Rurali, Riccardo

    2018-05-01

    We demonstrate a fully electric control of the heat flux, which can be continuously modulated by an externally applied electric field in PbTiO3, a prototypical ferroelectric perovskite, revealing the mechanisms by which experimentally accessible fields can be used to tune the thermal conductivity by as much as 50% at room temperature.

  5. Network Constrained Transactive Control for Electric Vehicles Integration

    DEFF Research Database (Denmark)

    Hu, Junjie; Yang, Guangya; Bindner, Henrik W.

    2015-01-01

    . This paper applies the transactive control concept to integrate electric vehicles into the power distribution system with the purpose of minimizing the charging cost of electric vehicles as well as preventing grid congestions and voltage violations. A hierarchical EV management system is proposed where three...

  6. Bends in nanotubes allow electric spin control and coupling

    DEFF Research Database (Denmark)

    Flensberg, Karsten; Marcus, Charles Masamed

    2010-01-01

    We investigate combined effects of spin-orbit coupling and magnetic field in carbon nanotubes containing one or more bends along their length. We show how bends can be used to provide electrical control of confined spins, while spins confined in straight segments remain insensitive to electric...

  7. Surge control of the electrically driven centrifugal compressor

    NARCIS (Netherlands)

    Boinov, K.O.; Lomonova, E.A.; Vandenput, A.J.A.; Tyagounov, A.

    2006-01-01

    This paper presents a method of the energy efficiency and the operational performance improvement of the electrically driven air compression system. The key innovation of the proposed method-the active surge suppression of the centrifugal compressor by means of the speed control of the electrical

  8. Ion implantation for semiconductors

    International Nuclear Information System (INIS)

    Grey-Morgan, T.

    1995-01-01

    Full text: Over the past two decades, thousands of particle accelerators have been used to implant foreign atoms like boron, phosphorus and arsenic into silicon crystal wafers to produce special embedded layers for manufacturing semiconductor devices. Depending on the device required, the atomic species, the depth of implant and doping levels are the main parameters for the implantation process; the selection and parameter control is totally automated. The depth of the implant, usually less than 1 micron, is determined by the ion energy, which can be varied between 2 and 600 keV. The ion beam is extracted from a Freeman or Bernas type ion source and accelerated to 60 keV before mass analysis. For higher beam energies postacceleration is applied up to 200 keV and even higher energies can be achieved by mass selecting multiplycharged ions, but with a corresponding reduction in beam output. Depending on the device to be manufactured, doping levels can range from 10 10 to 10 15 atoms/cm 2 and are controlled by implanter beam currents in the range up to 30mA; continuous process monitoring ensures uniformity across the wafer of better than 1 % . As semiconductor devices get smaller, additional sophistication is required in the design of the implanter. The silicon wafers charge electrically during implantation and this charge must be dissipated continuously to reduce the electrical stress in the device and avoid destructive electrical breakdown. Electron flood guns produce low energy electrons (below 10 electronvolts) to neutralize positive charge buildup and implanter design must ensure minimum contamination by other isotopic species and ensure low internal sputter rates. The pace of technology in the semiconductor industry is such that implanters are being built now for 256 Megabit circuits but which are only likely to be widely available five years from now. Several specialist companies manufacture implanter systems, each costing around US$5 million, depending on the

  9. Semiconductor radiation detection systems

    CERN Document Server

    2010-01-01

    Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

  10. Microscopic studies of the fate of charges in organic semiconductors: Scanning Kelvin probe measurements of charge trapping, transport, and electric fields in p- and n-type devices

    Science.gov (United States)

    Smieska, Louisa Marion

    Organic semiconductors could have wide-ranging applications in lightweight, efficient electronic circuits. However, several fundamental questions regarding organic electronic device behavior have not yet been fully addressed, including the nature of chemical charge traps, and robust models for injection and transport. Many studies focus on engineering devices through bulk transport measurements, but it is not always possible to infer the microscopic behavior leading to the observed measurements. In this thesis, we present scanning-probe microscope studies of organic semiconductor devices in an effort to connect local properties with local device behavior. First, we study the chemistry of charge trapping in pentacene transistors. Working devices are doped with known pentacene impurities and the extent of charge trap formation is mapped across the transistor channel. Trap-clearing spectroscopy is employed to measure an excitation of the pentacene charge trap species, enabling identification of the degradationrelated chemical trap in pentacene. Second, we examine transport and trapping in peryelene diimide (PDI) transistors. Local mobilities are extracted from surface potential profiles across a transistor channel, and charge injection kinetics are found to be highly sensitive to electrode cleanliness. Trap-clearing spectra generally resemble PDI absorption spectra, but one derivative yields evidence indicating variation in trap-clearing mechanisms for different surface chemistries. Trap formation rates are measured and found to be independent of surface chemistry, contradicting a proposed silanol trapping mechanism. Finally, we develop a variation of scanning Kelvin probe microscopy that enables measurement of electric fields through a position modulation. This method avoids taking a numeric derivative of potential, which can introduce high-frequency noise into the electric field signal. Preliminary data is presented, and the theoretical basis for electric field

  11. Plasmonic Control of Radiation and Absorption Processes in Semiconductor Quantum Dots

    Energy Technology Data Exchange (ETDEWEB)

    Paiella, Roberto [Boston Univ., MA (United States); Moustakas, Theodore D. [Boston Univ., MA (United States)

    2017-07-31

    This document reviews a research program funded by the DOE Office of Science, which has been focused on the control of radiation and absorption processes in semiconductor photonic materials (including III-nitride quantum wells and quantum dots), through the use of specially designed metallic nanoparticles (NPs). By virtue of their strongly confined plasmonic resonances (i.e., collective oscillations of the electron gas), these nanostructures can concentrate incident radiation into sub-wavelength “hot spots” of highly enhanced field intensity, thereby increasing optical absorption by suitably positioned absorbers. By reciprocity, the same NPs can also dramatically increase the spontaneous emission rate of radiating dipoles located within their hot spots. The NPs can therefore be used as optical antennas to enhance the radiation output of the underlying active material and at the same time control the far-field pattern of the emitted light. The key accomplishments of the project include the demonstration of highly enhanced light emission efficiency as well as plasmonic collimation and beaming along geometrically tunable directions, using a variety of plasmonic excitations. Initial results showing the reverse functionality (i.e., plasmonic unidirectional absorption and photodetection) have also been generated with similar systems. Furthermore, a new paradigm for the near-field control of light emission has been introduced through rigorous theoretical studies, based on the use of gradient metasurfaces (i.e., optical nanoantenna arrays with spatially varying shape, size, and/or orientation). These activities have been complemented by materials development efforts aimed at the synthesis of suitable light-emitting samples by molecular beam epitaxy. In the course of these efforts, a novel technique for the growth of III-nitride quantum dots has also been developed (droplet heteroepitaxy), with several potential advantages in terms of compositional and geometrical

  12. Organic semiconductor density of states controls the energy level alignment at electrode interfaces

    Science.gov (United States)

    Oehzelt, Martin; Koch, Norbert; Heimel, Georg

    2014-01-01

    Minimizing charge carrier injection barriers and extraction losses at interfaces between organic semiconductors and metallic electrodes is critical for optimizing the performance of organic (opto-) electronic devices. Here, we implement a detailed electrostatic model, capable of reproducing the alignment between the electrode Fermi energy and the transport states in the organic semiconductor both qualitatively and quantitatively. Covering the full phenomenological range of interfacial energy level alignment regimes within a single, consistent framework and continuously connecting the limiting cases described by previously proposed models allows us to resolve conflicting views in the literature. Our results highlight the density of states in the organic semiconductor as a key factor. Its shape and, in particular, the energy distribution of electronic states tailing into the fundamental gap is found to determine both the minimum value of practically achievable injection barriers as well as their spatial profile, ranging from abrupt interface dipoles to extended band-bending regions. PMID:24938867

  13. Electric Agricultural Robot with Multi-Layer-Control

    DEFF Research Database (Denmark)

    Griepentrog, Hans W.; Jæger-Hansen, Claes Lund; Dühring, Karina

    Research within agricultural technology focuses mainly on increasing the efficiency of crop production. Electric powered machines have several advantages. The machine control is much easier in terms of sensor integration, active navigation and task application compared with traditional machine ty...

  14. Computer-integrated electric-arc melting process control system

    OpenAIRE

    Дёмин, Дмитрий Александрович

    2014-01-01

    Developing common principles of completing melting process automation systems with hardware and creating on their basis rational choices of computer- integrated electricarc melting control systems is an actual task since it allows a comprehensive approach to the issue of modernizing melting sites of workshops. This approach allows to form the computer-integrated electric-arc furnace control system as part of a queuing system “electric-arc furnace - foundry conveyor” and consider, when taking ...

  15. Microwave photonics processing controlling the speed of light in semiconductor waveguides

    DEFF Research Database (Denmark)

    Xue, Weiqi; Chen, Yaohui; Sales, Salvador

    2009-01-01

    We review the theory of slow and fast light effect in semiconductor waveguides and potential applications of these effects in microwave photonic systems as RF phase shifters. Recent applications as microwave photonic filters is presented. Also, in the presentation more applications like optoelect......We review the theory of slow and fast light effect in semiconductor waveguides and potential applications of these effects in microwave photonic systems as RF phase shifters. Recent applications as microwave photonic filters is presented. Also, in the presentation more applications like...

  16. Electrical control of 2D magnetism in bilayer CrI 3.

    Science.gov (United States)

    Huang, Bevin; Clark, Genevieve; Klein, Dahlia R; MacNeill, David; Navarro-Moratalla, Efrén; Seyler, Kyle L; Wilson, Nathan; McGuire, Michael A; Cobden, David H; Xiao, Di; Yao, Wang; Jarillo-Herrero, Pablo; Xu, Xiaodong

    2018-04-23

    Controlling magnetism via electric fields addresses fundamental questions of magnetic phenomena and phase transitions 1-3 , and enables the development of electrically coupled spintronic devices, such as voltage-controlled magnetic memories with low operation energy 4-6 . Previous studies on dilute magnetic semiconductors such as (Ga,Mn)As and (In,Mn)Sb have demonstrated large modulations of the Curie temperatures and coercive fields by altering the magnetic anisotropy and exchange interaction 2,4,7-9 . Owing to their unique magnetic properties 10-14 , the recently reported two-dimensional magnets provide a new system for studying these features 15-19 . For instance, a bilayer of chromium triiodide (CrI 3 ) behaves as a layered antiferromagnet with a magnetic field-driven metamagnetic transition 15,16 . Here, we demonstrate electrostatic gate control of magnetism in CrI 3 bilayers, probed by magneto-optical Kerr effect (MOKE) microscopy. At fixed magnetic fields near the metamagnetic transition, we realize voltage-controlled switching between antiferromagnetic and ferromagnetic states. At zero magnetic field, we demonstrate a time-reversal pair of layered antiferromagnetic states that exhibit spin-layer locking, leading to a linear dependence of their MOKE signals on gate voltage with opposite slopes. Our results allow for the exploration of new magnetoelectric phenomena and van der Waals spintronics based on 2D materials.

  17. Ultrafast electric phase control of a single exciton qubit

    Science.gov (United States)

    Widhalm, Alex; Mukherjee, Amlan; Krehs, Sebastian; Sharma, Nandlal; Kölling, Peter; Thiede, Andreas; Reuter, Dirk; Förstner, Jens; Zrenner, Artur

    2018-03-01

    We report on the coherent phase manipulation of quantum dot excitons by electric means. For our experiments, we use a low capacitance single quantum dot photodiode which is electrically controlled by a custom designed SiGe:C BiCMOS chip. The phase manipulation is performed and quantified in a Ramsey experiment, where ultrafast transient detuning of the exciton energy is performed synchronous to double pulse π/2 ps laser excitation. We are able to demonstrate electrically controlled phase manipulations with magnitudes up to 3π within 100 ps which is below the dephasing time of the quantum dot exciton.

  18. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  19. Variable structure unit vector control of electric power generation ...

    African Journals Online (AJOL)

    A variable structure Automatic Generation Control (VSAGC) scheme is proposed in this paper for the control of a single area power system model dominated by steam powered electric generating plants. Unlike existing, VSAGC scheme where the selection of the control function is based on a trial and error procedure, the ...

  20. Application of statistical methods (SPC) for an optimized control of the irradiation process of high-power semiconductors

    International Nuclear Information System (INIS)

    Mittendorfer, J.; Zwanziger, P.

    2000-01-01

    High-power bipolar semiconductor devices (thyristors and diodes) in a disc-type shape are key components (semiconductor switches) for high-power electronic systems. These systems are important for the economic design of energy transmission systems, i.e. high-power drive systems, static compensation and high-voltage DC transmission lines. In their factory located in Pretzfeld, Germany, the company, eupec GmbH+Co.KG (eupec), is producing disc-type devices with ceramic encapsulation in the high-end range for the world market. These elements have to fulfill special customer requirements and therefore deliver tailor-made trade-offs between their on-state voltage and dynamic switching behaviour. This task can be achieved by applying a dedicated electron irradiation on the semiconductor pellets, which tunes this trade-off. In this paper, the requirements to the irradiation company Mediscan GmbH, from the point of view of the semiconductor manufacturer, are described. The actual strategy for controlling the irradiation results to fulfill these requirements are presented, together with the choice of relevant parameters from the viewpoint of the irradiation company. The set of process parameters monitored, using statistical process control (SPC) techniques, includes beam current and energy, conveyor speed and irradiation geometry. The results are highlighted and show the successful co-operation in this business. Watching this process vice versa, an idea is presented and discussed to develop the possibilities of a highly sensitive dose detection device by using modified diodes, which could function as accurate yet cheap and easy-to-use detectors as routine dosimeters for irradiation institutes. (author)

  1. Resonance fluorescence revival in a voltage-controlled semiconductor quantum dot

    Science.gov (United States)

    Reigue, Antoine; Lemaître, Aristide; Gomez Carbonell, Carmen; Ulysse, Christian; Merghem, Kamel; Guilet, Stéphane; Hostein, Richard; Voliotis, Valia

    2018-02-01

    We demonstrate systematic resonance fluorescence recovery with near-unity emission efficiency in single quantum dots embedded in a charge-tunable device in a wave-guiding geometry. The quantum dot charge state is controlled by a gate voltage, through carrier tunneling from a close-lying Fermi sea, stabilizing the resonantly photocreated electron-hole pair. The electric field cancels out the charging/discharging mechanisms from nearby traps toward the quantum dots, responsible for the usually observed inhibition of the resonant fluorescence. Fourier transform spectroscopy as a function of the applied voltage shows a strong increase in the coherence time though not reaching the radiative limit. These charge controlled quantum dots can act as quasi-perfect deterministic single-photon emitters, with one laser pulse converted into one emitted single photon.

  2. The Control of Switched Reluctance Motor in Electric Vehicle

    Directory of Open Access Journals (Sweden)

    Zheng Liu

    2014-05-01

    Full Text Available The control of SRM was discussed: current chopping control, angle position control. This paper presents an inverter circuit and a fuzzy sliding mode control method to minimize the torque fluctuation and noise of the SRM. Based on the experimental results, Using the inverter circuit and fuzzy sliding mode control method can effectively minimize the torque fluctuation and noise of the SRM, For the switched reluctance motor applications in electric vehicles to provide a theoretical basis.

  3. Optimization and Control of Electric Power Systems

    Energy Technology Data Exchange (ETDEWEB)

    Lesieutre, Bernard C. [Univ. of Wisconsin, Madison, WI (United States); Molzahn, Daniel K. [Univ. of Wisconsin, Madison, WI (United States)

    2014-10-17

    The analysis and optimization needs for planning and operation of the electric power system are challenging due to the scale and the form of model representations. The connected network spans the continent and the mathematical models are inherently nonlinear. Traditionally, computational limits have necessitated the use of very simplified models for grid analysis, and this has resulted in either less secure operation, or less efficient operation, or both. The research conducted in this project advances techniques for power system optimization problems that will enhance reliable and efficient operation. The results of this work appear in numerous publications and address different application problems include optimal power flow (OPF), unit commitment, demand response, reliability margins, planning, transmission expansion, as well as general tools and algorithms.

  4. Semiconductor physics

    CERN Document Server

    Böer, Karl W

    2018-01-01

    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  5. Wind power electric systems modeling, simulation and control

    CERN Document Server

    Rekioua, Djamila

    2014-01-01

    The book helps readers understand key concepts in standalone and grid connected wind energy systems and features analysis into the modeling and optimization of commonly used configurations through the implementation of different control strategies.Utilizing several electrical machinery control approaches, such as vector control and direct torque control 'Wind Power Electric Systems' equips readers with the means to understand, assess and develop their own wind energy systems and to evaluate the performance of such systems.Mathematical models are provided for each system and a corresponding MAT

  6. Electrical Programming of Soft Matter: Using Temporally Varying Electrical Inputs To Spatially Control Self Assembly.

    Science.gov (United States)

    Yan, Kun; Liu, Yi; Zhang, Jitao; Correa, Santiago O; Shang, Wu; Tsai, Cheng-Chieh; Bentley, William E; Shen, Jana; Scarcelli, Giuliano; Raub, Christopher B; Shi, Xiao-Wen; Payne, Gregory F

    2018-02-12

    The growing importance of hydrogels in translational medicine has stimulated the development of top-down fabrication methods, yet often these methods lack the capabilities to generate the complex matrix architectures observed in biology. Here we show that temporally varying electrical signals can cue a self-assembling polysaccharide to controllably form a hydrogel with complex internal patterns. Evidence from theory and experiment indicate that internal structure emerges through a subtle interplay between the electrical current that triggers self-assembly and the electrical potential (or electric field) that recruits and appears to orient the polysaccharide chains at the growing gel front. These studies demonstrate that short sequences (minutes) of low-power (∼1 V) electrical inputs can provide the program to guide self-assembly that yields hydrogels with stable, complex, and spatially varying structure and properties.

  7. Optical, Electrical and Photocatalytic Properties of the Ternary Semiconductors ZnxCd1-xS, CuxCd1-xS and CuxZn1-xS

    Directory of Open Access Journals (Sweden)

    Sandra Andrea Mayén-Hernández

    2014-01-01

    Full Text Available The effects of vacuum annealing at different temperatures on the optical, electrical and photocatalytic properties of polycrystalline and amorphous thin films of the ternary semiconductor alloys ZnxCd1-xS, CuxCd1-xS and CuxZn1-xS were investigated in stacks of binary semiconductors obtained by chemical bath deposition. The electrical properties were measured at room temperature using a four-contact probe in the Van der Pauw configuration. The energy band gap of the films varied from 2.30 to 2.85 eV. The photocatalytic activity of the semiconductor thin films was evaluated by the degradation of an aqueous methylene blue solution. The thin film of ZnxCd1-xS annealed under vacuum at 300°C exhibited the highest photocatalytic activity.

  8. Controlling trapping potentials and stray electric fields in a microfabricated ion trap through design and compensation

    International Nuclear Information System (INIS)

    Charles Doret, S; Amini, Jason M; Wright, Kenneth; Volin, Curtis; Killian, Tyler; Ozakin, Arkadas; Denison, Douglas; Hayden, Harley; Pai, C-S; Slusher, Richart E; Harter, Alexa W

    2012-01-01

    Recent advances in quantum information processing with trapped ions have demonstrated the need for new ion trap architectures capable of holding and manipulating chains of many (>10) ions. Here we present the design and detailed characterization of a new linear trap, microfabricated with scalable complementary metal-oxide-semiconductor (CMOS) techniques, that is well-suited to this challenge. Forty-four individually controlled dc electrodes provide the many degrees of freedom required to construct anharmonic potential wells, shuttle ions, merge and split ion chains, precisely tune secular mode frequencies, and adjust the orientation of trap axes. Microfabricated capacitors on dc electrodes suppress radio-frequency pickup and excess micromotion, while a top-level ground layer simplifies modeling of electric fields and protects trap structures underneath. A localized aperture in the substrate provides access to the trapping region from an oven below, permitting deterministic loading of particular isotopic/elemental sequences via species-selective photoionization. The shapes of the aperture and radio-frequency electrodes are optimized to minimize perturbation of the trapping pseudopotential. Laboratory experiments verify simulated potentials and characterize trapping lifetimes, stray electric fields, and ion heating rates, while measurement and cancellation of spatially-varying stray electric fields permits the formation of nearly-equally spaced ion chains. (paper)

  9. Electrical conductivity, optical properties and mechanical stability of 3, 4, 9, 10-perylenetetracarboxylic dianhidride based organic semiconductor

    Science.gov (United States)

    Pandey, Mayank; Joshi, Girish M.; Deshmukh, Kalim; Nath Ghosh, Narendra; Nambi Raj, N. Arunai

    2015-05-01

    The 3, 4, 9, 10-perylenetetracarboxylic dianhydride (PTCDA) doped polymer films were prepared with Polypyrrole (PPy) and Polyvinyl alcohol (PVA) polymers by solution-casting. The change in structure and chemical composition of samples was identified by XRD and FTIR respectively. The UV-visible spectroscopy demonstrates the optical characteristics and band gap properties of sample. The homogeneous morphology of sample for higher wt% of PTCDA was examined by atomic force microscopy (AFM). The differential scanning calorimetry (DSC) results demonstrate the decrease in melting temperature (Tm) and degree of crystallinity (χc%) of polymeric organic semiconductor. The mechanical property demonstrates the high tensile strength and improved plasticity nature. Impedance spectroscopy was evaluated to determine the conductivity response of polymeric organic semiconductor. The highest DC conductivity (2.08×10-3 S/m) was obtained for 10 wt% of PTCDA at 140 °C. The decrease in activation energy (Ea) represents the non-Debye process and was evaluated from the slope of ln σdc vs. 103/T plot.

  10. Controlled structures in laterally patterned barrier discharges by illumination of the semiconductor electrode

    International Nuclear Information System (INIS)

    Wild, R; Schumann, T; Stollenwerk, L

    2014-01-01

    In this contribution, we present a possibility to actively control emerging patterns in laterally extended barrier discharges. One of the barriers is a high-ohmic semiconductive GaAs electrode. As the electrode is illuminated from its plasma-far side, the voltage inside the plasma gap is increased. If the gap voltage becomes higher than the ignition voltage of the gas, a discharge is started. A corresponding electrical model is given. The lateral resolution of control for a laterally homogeneous discharge is investigated. It is found that the luminescence of the discharge is controlled by both a variation of illumination power density and a variation of the applied voltage. However, during an increase in the applied voltage, the discharge may become larger than the area of illumination. Further, an investigation of the patterned discharge control shows that the number of current spots depends on the illumination power density and the area of illumination. The behaviour of current spot appearance suggests an inhibitory influence, preventing a discharge in its immediate surrounding and limiting the total number of current spots. (paper)

  11. Quantum transport in semiconductor nanowires

    NARCIS (Netherlands)

    Van Dam, J.

    2006-01-01

    This thesis describes a series of experiments aimed at understanding the low-temperature electrical transport properties of semiconductor nanowires. The semiconductor nanowires (1-100 nm in diameter) are grown from nanoscale gold particles via a chemical process called vapor-liquid-solid (VLS)

  12. Electrical Control of Metallic Heavy-Metal-Ferromagnet Interfacial States

    Science.gov (United States)

    Bi, Chong; Sun, Congli; Xu, Meng; Newhouse-Illige, Ty; Voyles, Paul M.; Wang, Weigang

    2017-09-01

    Voltage-control effects provide an energy-efficient means of tailoring material properties, especially in highly integrated nanoscale devices. However, only insulating and semiconducting systems can be controlled so far. In metallic systems, there is no electric field due to electron screening effects and thus no such control effect exists. Here, we demonstrate that metallic systems can also be controlled electrically through ionic rather than electronic effects. In a Pt /Co structure, the control of the metallic Pt /Co interface can lead to unprecedented control effects on the magnetic properties of the entire structure. Consequently, the magnetization and perpendicular magnetic anisotropy of the Co layer can be independently manipulated to any desired state, the efficient spin toques can be enhanced about 3.5 times, and the switching current can be reduced about one order of magnitude. This ability to control a metallic system may be extended to control other physical phenomena.

  13. Design of electric control system for automatic vegetable bundling machine

    Science.gov (United States)

    Bao, Yan

    2017-06-01

    A design can meet the requirements of automatic bale food structure and has the advantages of simple circuit, and the volume is easy to enhance the electric control system of machine carrying bunch of dishes and low cost. The bundle of vegetable machine should meet the sensor to detect and control, in order to meet the control requirements; binding force can be adjusted by the button to achieve; strapping speed also can be adjusted, by the keys to set; sensors and mechanical line connection, convenient operation; can be directly connected with the plug, the 220V power supply can be connected to a power source; if, can work, by the transmission signal sensor, MCU to control the motor, drive and control procedures for small motor. The working principle of LED control circuit and temperature control circuit is described. The design of electric control system of automatic dish machine.

  14. RISKS OF LOSING CONTROLLABILITY WHILE LIBERALIZING THE ELECTRIC POWER INDUSTRY

    Directory of Open Access Journals (Sweden)

    Yu. S. Petrusha

    2015-01-01

    Full Text Available The paper analyses controllability qua a reliability characteristic of the electric-power grid controlling system. The following notions are used: the object (environment susceptibility towards the control stimuli, the controlling system adequacy, environment of the secure functioning. The author points to the necessity of accounting for the limitations of technological and organizational character. While liberalizing the electric-power industry, the backbone control-principle “the industry functioning reliability” is being replaced with the principle of “profit-making” that requires complete restatement of the control philosophy.The conflict between commercial benefit gaining and the reliability assurance expenses leads to losing controllability in all the managerial links and to probable catastrophic consequences. The recapitulation of the Russian Federation power industry privatization substantiates concerns of the liberal ideas poor survivability in the ex-Soviet territories. The results of degradation of the secure-functioning environment demonstrate affinity of the mechanisms that triggered the Chernobyl NPP, Fukusima NPP, and Sayan-Shushenskya HPP disasters. Securing reliability of the strategic objects leaves the competence boundaries of the electricpower industry.The topical issue of Belorussian electric-power industry functioning and developing is the combination of technical re-equipment (developing the operational dispatch management and the control-system organizational modernizing in general with gradual and controllable transition to the market mechanisms of functioning. Herewith, preserving the state monopoly on regime provision for the operation of the electric-power system should not leave out the industry appeal for outside investment and is regulated by the optimal degree and intensity of the state participation in governing the electric-power supply industry. The distinction of privatization models and the stages

  15. Reconfigurable engineered motile semiconductor microparticles.

    Science.gov (United States)

    Ohiri, Ugonna; Shields, C Wyatt; Han, Koohee; Tyler, Talmage; Velev, Orlin D; Jokerst, Nan

    2018-05-03

    Locally energized particles form the basis for emerging classes of active matter. The design of active particles has led to their controlled locomotion and assembly. The next generation of particles should demonstrate robust control over their active assembly, disassembly, and reconfiguration. Here we introduce a class of semiconductor microparticles that can be comprehensively designed (in size, shape, electric polarizability, and patterned coatings) using standard microfabrication tools. These custom silicon particles draw energy from external electric fields to actively propel, while interacting hydrodynamically, and sequentially assemble and disassemble on demand. We show that a number of electrokinetic effects, such as dielectrophoresis, induced charge electrophoresis, and diode propulsion, can selectively power the microparticle motions and interactions. The ability to achieve on-demand locomotion, tractable fluid flows, synchronized motility, and reversible assembly using engineered silicon microparticles may enable advanced applications that include remotely powered microsensors, artificial muscles, reconfigurable neural networks and computational systems.

  16. Communication: Control of chemical reactions using electric field gradients

    Energy Technology Data Exchange (ETDEWEB)

    Deshmukh, Shivaraj D.; Tsori, Yoav, E-mail: tsori@bgu.ac.il [Department of Chemical Engineering, Ben-Gurion University of the Negev, Beer-Sheva 84105 (Israel)

    2016-05-21

    We examine theoretically a new idea for spatial and temporal control of chemical reactions. When chemical reactions take place in a mixture of solvents, an external electric field can alter the local mixture composition, thereby accelerating or decelerating the rate of reaction. The spatial distribution of electric field strength can be non-trivial and depends on the arrangement of the electrodes producing it. In the absence of electric field, the mixture is homogeneous and the reaction takes place uniformly in the reactor volume. When an electric field is applied, the solvents separate and the reactants are concentrated in the same phase or separate to different phases, depending on their relative miscibility in the solvents, and this can have a large effect on the kinetics of the reaction. This method could provide an alternative way to control runaway reactions and to increase the reaction rate without using catalysts.

  17. Solid state cloaking for electrical charge carrier mobility control

    Science.gov (United States)

    Zebarjadi, Mona; Liao, Bolin; Esfarjani, Keivan; Chen, Gang

    2015-07-07

    An electrical mobility-controlled material includes a solid state host material having a controllable Fermi energy level and electrical charge carriers with a charge carrier mobility. At least one Fermi level energy at which a peak in charge carrier mobility is to occur is prespecified for the host material. A plurality of particles are distributed in the host material, with at least one particle disposed with an effective mass and a radius that minimize scattering of the electrical charge carriers for the at least one prespecified Fermi level energy of peak charge carrier mobility. The minimized scattering of electrical charge carriers produces the peak charge carrier mobility only at the at least one prespecified Fermi level energy, set by the particle effective mass and radius, the charge carrier mobility being less than the peak charge carrier mobility at Fermi level energies other than the at least one prespecified Fermi level energy.

  18. Communication: Control of chemical reactions using electric field gradients.

    Science.gov (United States)

    Deshmukh, Shivaraj D; Tsori, Yoav

    2016-05-21

    We examine theoretically a new idea for spatial and temporal control of chemical reactions. When chemical reactions take place in a mixture of solvents, an external electric field can alter the local mixture composition, thereby accelerating or decelerating the rate of reaction. The spatial distribution of electric field strength can be non-trivial and depends on the arrangement of the electrodes producing it. In the absence of electric field, the mixture is homogeneous and the reaction takes place uniformly in the reactor volume. When an electric field is applied, the solvents separate and the reactants are concentrated in the same phase or separate to different phases, depending on their relative miscibility in the solvents, and this can have a large effect on the kinetics of the reaction. This method could provide an alternative way to control runaway reactions and to increase the reaction rate without using catalysts.

  19. Controlling turbulent drag across electrolytes using electric fields.

    Science.gov (United States)

    Ostilla-Mónico, Rodolfo; Lee, Alpha A

    2017-07-01

    Reversible in operando control of friction is an unsolved challenge that is crucial to industrial tribology. Recent studies show that at low sliding velocities, this control can be achieved by applying an electric field across electrolyte lubricants. However, the phenomenology at high sliding velocities is yet unknown. In this paper, we investigate the hydrodynamic friction across electrolytes under shear beyond the transition to turbulence. We develop a novel, highly parallelised numerical method for solving the coupled Navier-Stokes Poisson-Nernst-Planck equation. Our results show that turbulent drag cannot be controlled across dilute electrolytes using static electric fields alone. The limitations of the Poisson-Nernst-Planck formalism hint at ways in which turbulent drag could be controlled using electric fields.

  20. Organic semiconductor crystals.

    Science.gov (United States)

    Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

    2018-01-22

    Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

  1. Neuroelectronics and modeling of electrical signals for monitoring and control of Parkinson's disease

    Science.gov (United States)

    Chintakuntla, Ritesh R.; Abraham, Jose K.; Varadan, Vijay K.

    2009-03-01

    The brain and the human nervous system are perhaps the most researched but least understood components of the human body. This is so because of the complex nature of its working and the high density of functions. The monitoring of neural signals could help one better understand the working of the brain and newer recording and monitoring methods have been developed ever since it was discovered that the brain communicates internally by means of electrical pulses. Neuroelectronics is the field which deals with the interface between electronics or semiconductors to living neurons. This includes monitoring of electrical activity from the brain as well as the development of feedback devices for stimulation of parts of the brain for treatment of disorders. In this paper these electrical signals are modeled through a nano/microelectrode arrays based on the electronic equivalent model using Cadence PSD 15.0. The results were compared with those previously published models such as Kupfmuller and Jenik's model, McGrogan's Neuron Model which are based on the Hodgkin and Huxley model. We have developed and equivalent circuit model using discrete passive components to simulate the electrical activity of the neurons. The simulated circuit can be easily be modified by adding some more ionic channels and the results can be used to predict necessary external stimulus needed for stimulation of neurons affected by the Parkinson's disease (PD). Implementing such a model in PD patients could predict the necessary voltages required for the electrical stimulation of the sub-thalamus region for the control tremor motion.

  2. Control system and method for a hybrid electric vehicle

    Science.gov (United States)

    Tamor, Michael Alan

    2001-03-06

    Several control methods are presented for application in a hybrid electric vehicle powertrain including in various embodiments an engine, a motor/generator, a transmission coupled at an input thereof to receive torque from the engine and the motor generator coupled to augment torque provided by the engine, an energy storage device coupled to receive energy from and provide energy to the motor/generator, an engine controller (EEC) coupled to control the engine, a transmission controller (TCM) coupled to control the transmission and a vehicle system controller (VSC) adapted to control the powertrain.

  3. Route-Based Control of Hybrid Electric Vehicles: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Gonder, J. D.

    2008-01-01

    Today's hybrid electric vehicle controls cannot always provide maximum fuel savings over all drive cycles. Route-based controls could improve HEV fuel efficiency by 2%-4% and help save nearly 6.5 million gallons of fuel annually.

  4. Control of radial electric field in torus plasma

    International Nuclear Information System (INIS)

    Ida, K.; Idei, H.; Sanuki, H.

    1994-09-01

    The radial electric fields is controlled by changing the direction of neutral beam from co to counter to plasma current in tokamak, while it is controlled by the 2nd harmonic ECH and NBI and pellet injection in heliotron/torsatron. (author)

  5. Robust Control of Aeronautical Electrical Generators for Energy Management Applications

    OpenAIRE

    Giacomo Canciello; Alberto Cavallo; Beniamino Guida

    2017-01-01

    A new strategy for the control of aeronautical electrical generators via sliding manifold selection is proposed, with an associated innovative intelligent energy management strategy used for efficient power transfer between two sources providing energy to aeronautical loads, having different functionalities and priorities. Electric generators used for aeronautical application involve several machines, including a main generator and an exciter. Standard regulators (PI or PID-like) are normally...

  6. Sprag solenoid brake. [development and operations of electrically controlled brake

    Science.gov (United States)

    Dane, D. H. (Inventor)

    1974-01-01

    The development and characteristics of an electrically operated brake are discussed. The action of the brake depends on energizing a solenoid which causes internally spaced sprockets to contact the inner surface of the housing. A spring forces the control member to move to the braking position when the electrical function is interrupted. A diagram of the device is provided and detailed operating principles are explained.

  7. Adaptive powertrain control for plugin hybrid electric vehicles

    Science.gov (United States)

    Kedar-Dongarkar, Gurunath; Weslati, Feisel

    2013-10-15

    A powertrain control system for a plugin hybrid electric vehicle. The system comprises an adaptive charge sustaining controller; at least one internal data source connected to the adaptive charge sustaining controller; and a memory connected to the adaptive charge sustaining controller for storing data generated by the at least one internal data source. The adaptive charge sustaining controller is operable to select an operating mode of the vehicle's powertrain along a given route based on programming generated from data stored in the memory associated with that route. Further described is a method of adaptively controlling operation of a plugin hybrid electric vehicle powertrain comprising identifying a route being traveled, activating stored adaptive charge sustaining mode programming for the identified route and controlling operation of the powertrain along the identified route by selecting from a plurality of operational modes based on the stored adaptive charge sustaining mode programming.

  8. Control and Optimization Methods for Electric Smart Grids

    CERN Document Server

    Ilić, Marija

    2012-01-01

    Control and Optimization Methods for Electric Smart Grids brings together leading experts in power, control and communication systems,and consolidates some of the most promising recent research in smart grid modeling,control and optimization in hopes of laying the foundation for future advances in this critical field of study. The contents comprise eighteen essays addressing wide varieties of control-theoretic problems for tomorrow’s power grid. Topics covered include: Control architectures for power system networks with large-scale penetration of renewable energy and plug-in vehicles Optimal demand response New modeling methods for electricity markets Control strategies for data centers Cyber-security Wide-area monitoring and control using synchronized phasor measurements. The authors present theoretical results supported by illustrative examples and practical case studies, making the material comprehensible to a wide audience. The results reflect the exponential transformation that today’s grid is going...

  9. 5th International Conference on Electrical Engineering and Automatic Control

    CERN Document Server

    Yao, Yufeng

    2016-01-01

    On the basis of instrument electrical and automatic control system, the 5th International Conference on Electrical Engineering and Automatic Control (CEEAC) was established at the crossroads of information technology and control technology, and seeks to effectively apply information technology to a sweeping trend that views control as the core of intelligent manufacturing and life. This book takes a look forward into advanced manufacturing development, an area shaped by intelligent manufacturing. It highlights the application and promotion of process control represented by traditional industries, such as the steel industry and petrochemical industry; the technical equipment and system cooperative control represented by robot technology and multi-axis CNC; and the control and support of emerging process technologies represented by laser melting and stacking, as well as the emerging industry represented by sustainable and intelligent life. The book places particular emphasis on the micro-segments field, such as...

  10. Electrical and optical study of transparent V-based oxide semiconductors prepared by magnetron sputtering under different conditions

    Directory of Open Access Journals (Sweden)

    E. Prociow

    2011-04-01

    Full Text Available This work is focused on structural, optical and electrical behaviors of vanadium-based oxide thin films prepared by magnetron sputtering under different conditions. Thin films have been deposited on glass substrates from metallic vanadium target at low sputtering pressure. Different working gases: argon/oxygen mixture, and especially pure oxygen gas, have been applied. Results of X-ray diffraction together with optical transmission and temperature- dependent electrical resistivity measurements have been presented. Transmission coefficient, cut-off wavelength and the width of the optical band gap have been calculated from optical measurements. The d.c. resistivity values at room temperature and thermal activation energy have been obtained from electrical investigations. The influence of sputtering process conditions on optical and electrical properties has been discussed.

  11. Energy efficient motion control of the electric bus on route

    Science.gov (United States)

    Kotiev, G. O.; Butarovich, D. O.; Kositsyn, B. B.

    2018-02-01

    At present, the urgent problem is the reduction of energy costs of urban motor transport. The article proposes a method of solving this problem by developing an energy-efficient law governing the movement of an electric bus along a city route. To solve this problem, an algorithm is developed based on the dynamic programming method. The proposed method allows you to take into account the constraints imposed on the phase coordinates, control action, as well as on the time of the route. In the course of solving the problem, the model of rectilinear motion of an electric bus on a horizontal reference surface is considered, taking into account the assumptions that allow it to be adapted for the implementation of the method. For the formation of a control action in the equations of motion dynamics, an algorithm for changing the traction / braking torque on the wheels of an electric bus is considered, depending on the magnitude of the control parameter and the speed of motion. An optimal phase trajectory was obtained on a selected section of the road for the prototype of an electric bus. The article presents the comparison of simulation results obtained with the optimal energy efficient control law with the results obtained by a test driver. The comparison proved feasibility of the energy efficient control law for the automobile city electric transport.

  12. Fire protection electrical engineering

    International Nuclear Information System (INIS)

    Oh, Jung Min

    2000-03-01

    This book concentrates of electricity with current, voltage, power, ohms law, access of resistance, electrolytic analysis and battery, static on frictional electricity and electrostatic induction, coulomb's law, Gauss's law, condenser and capacity, magmatism on magnetic field and magnetic line of force, magnetic circuit, electromagnetic force, electromotive current, basic alternating current circuit, circuit network analysis, three-phase current, non-sinusoidal alternating current, transient phenomena, semiconductor, electric measurement on measurement over resistance, power, power rate and circuit tester, automatic control on introduction, term, classification, foundation of sequence control, logic circuit and basic logic circuit and electric equipment.

  13. Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material

    Science.gov (United States)

    McKee, Rodney Allen; Walker, Frederick Joseph

    2000-01-01

    A crystalline structure and a semiconductor device includes a substrate of a semiconductor-based material and a thin film of an anisotropic crystalline material epitaxially arranged upon the surface of the substrate so that the thin film couples to the underlying substrate and so that the geometries of substantially all of the unit cells of the thin film are arranged in a predisposed orientation relative to the substrate surface. The predisposition of the geometries of the unit cells of the thin film is responsible for a predisposed orientation of a directional-dependent quality, such as the dipole moment, of the unit cells. The predisposed orientation of the unit cell geometries are influenced by either a stressed or strained condition of the lattice at the interface between the thin film material and the substrate surface.

  14. Using a Semiconductor-to-Metal Transition to Control Optical Transmission through Subwavelength Hole Arrays

    Directory of Open Access Journals (Sweden)

    E. U. Donev

    2008-01-01

    Full Text Available We describe a simple configuration in which the extraordinary optical transmission effect through subwavelength hole arrays in noble-metal films can be switched by the semiconductor-to-metal transition in an underlying thin film of vanadium dioxide. In these experiments, the transition is brought about by thermal heating of the bilayer film. The surprising reverse hysteretic behavior of the transmission through the subwavelength holes in the vanadium oxide suggest that this modulation is accomplished by a dielectric-matching condition rather than plasmon coupling through the bilayer film. The results of this switching, including the wavelength dependence, are qualitatively reproduced by a transfer matrix model. The prospects for effecting a similar modulation on a much faster time scale by using ultrafast laser pulses to trigger the semiconductor-to-metal transition are also discussed.

  15. Low-energy control of electrical turbulence in the heart

    Science.gov (United States)

    Luther, Stefan; Fenton, Flavio H.; Kornreich, Bruce G.; Squires, Amgad; Bittihn, Philip; Hornung, Daniel; Zabel, Markus; Flanders, James; Gladuli, Andrea; Campoy, Luis; Cherry, Elizabeth M.; Luther, Gisa; Hasenfuss, Gerd; Krinsky, Valentin I.; Pumir, Alain; Gilmour, Robert F.; Bodenschatz, Eberhard

    2011-07-01

    Controlling the complex spatio-temporal dynamics underlying life-threatening cardiac arrhythmias such as fibrillation is extremely difficult, because of the nonlinear interaction of excitation waves in a heterogeneous anatomical substrate. In the absence of a better strategy, strong, globally resetting electrical shocks remain the only reliable treatment for cardiac fibrillation. Here we establish the relationship between the response of the tissue to an electric field and the spatial distribution of heterogeneities in the scale-free coronary vascular structure. We show that in response to a pulsed electric field, E, these heterogeneities serve as nucleation sites for the generation of intramural electrical waves with a source density ρ(E) and a characteristic time, τ, for tissue depolarization that obeys the power law τ~Eα. These intramural wave sources permit targeting of electrical turbulence near the cores of the vortices of electrical activity that drive complex fibrillatory dynamics. We show in vitro that simultaneous and direct access to multiple vortex cores results in rapid synchronization of cardiac tissue and therefore, efficient termination of fibrillation. Using this control strategy, we demonstrate low-energy termination of fibrillation in vivo. Our results give new insights into the mechanisms and dynamics underlying the control of spatio-temporal chaos in heterogeneous excitable media and provide new research perspectives towards alternative, life-saving low-energy defibrillation techniques.

  16. All-electric control of donor nuclear spin qubits in silicon

    Science.gov (United States)

    Sigillito, Anthony J.; Tyryshkin, Alexei M.; Schenkel, Thomas; Houck, Andrew A.; Lyon, Stephen A.

    2017-10-01

    The electronic and nuclear spin degrees of freedom of donor impurities in silicon form ultra-coherent two-level systems that are potentially useful for applications in quantum information and are intrinsically compatible with industrial semiconductor processing. However, because of their smaller gyromagnetic ratios, nuclear spins are more difficult to manipulate than electron spins and are often considered too slow for quantum information processing. Moreover, although alternating current magnetic fields are the most natural choice to drive spin transitions and implement quantum gates, they are difficult to confine spatially to the level of a single donor, thus requiring alternative approaches. In recent years, schemes for all-electrical control of donor spin qubits have been proposed but no experimental demonstrations have been reported yet. Here, we demonstrate a scalable all-electric method for controlling neutral 31P and 75As donor nuclear spins in silicon. Using coplanar photonic bandgap resonators, we drive Rabi oscillations on nuclear spins exclusively using electric fields by employing the donor-bound electron as a quantum transducer, much in the spirit of recent works with single-molecule magnets. The electric field confinement leads to major advantages such as low power requirements, higher qubit densities and faster gate times. Additionally, this approach makes it possible to drive nuclear spin qubits either at their resonance frequency or at its first subharmonic, thus reducing device bandwidth requirements. Double quantum transitions can be driven as well, providing easy access to the full computational manifold of our system and making it convenient to implement nuclear spin-based qudits using 75As donors.

  17. MODELING CONTROLLED ASYNCHRONOUS ELECTRIC DRIVES WITH MATCHING REDUCERS AND TRANSFORMERS

    Directory of Open Access Journals (Sweden)

    V. S. Petrushin

    2015-04-01

    Full Text Available Purpose. Working out of mathematical models of the speed-controlled induction electric drives ensuring joint consideration of transformers, motors and loadings, and also matching reducers and transformers, both in static, and in dynamic regimes for the analysis of their operating characteristics. Methodology. At mathematical modelling are considered functional, mass, dimensional and cost indexes of reducers and transformers that allows observing engineering and economic aspects of speed-controlled induction electric drives. The mathematical models used for examination of the transitive electromagnetic and electromechanical processes, are grounded on systems of nonlinear differential equations with nonlinear coefficients (parameters of equivalent circuits of motors, varying in each operating point, including owing to appearances of saturation of magnetic system and current displacement in a winding of a rotor of an induction motor. For the purpose of raise of level of adequacy of models a magnetic circuit iron, additional and mechanical losses are considered. Results. Modelling of the several speed-controlled induction electric drives, different by components, but working on a loading equal on character, magnitude and a demanded control range is executed. At use of characteristic families including mechanical, at various parameters of regulating on which performances of the load mechanism are superimposed, the adjusting characteristics representing dependences of a modification of electrical, energy and thermal magnitudes from an angular speed of motors are gained. Originality. The offered complex models of speed-controlled induction electric drives with matching reducers and transformers, give the chance to realize well-founded sampling of components of drives. They also can be used as the design models by working out of speed-controlled induction motors. Practical value. Operating characteristics of various speed-controlled induction electric

  18. Dissipative chaos in semiconductor superlattices

    Directory of Open Access Journals (Sweden)

    F. Moghadam

    2008-03-01

    Full Text Available In this paper the motion of electron in a miniband of a semiconductor superlattice (SSL under the influence of external electric and magnetic fields is investigated. The electric field is applied in a direction perpendicular to the layers of the semiconductor superlattice, and the magnetic field is applied in different direction Numerical calculations show conditions led to the possibility of chaotic behaviors.

  19. Nuclear electric power safety, operation, and control aspects

    CERN Document Server

    Knowles, J Brian

    2013-01-01

    Assesses the engineering of renewable sources for commercial power generation and discusses the safety, operation, and control aspects of nuclear electric power From an expert who advised the European Commission and UK government in the aftermath of Three Mile Island and Chernobyl comes a book that contains experienced engineering assessments of the options for replacing the existing, aged, fossil-fired power stations with renewable, gas-fired, or nuclear plants. From geothermal, solar, and wind to tidal and hydro generation, Nuclear Electric Power: Safety, Operation, and Control Aspects ass

  20. Modulation of the electrical properties in amorphous indium-gallium zinc-oxide semiconductor films using hydrogen incorporation

    Science.gov (United States)

    Song, Aeran; Park, Hyun-Woo; Chung, Kwun-Bum; Rim, You Seung; Son, Kyoung Seok; Lim, Jun Hyung; Chu, Hye Yong

    2017-12-01

    The electrical properties of amorphous-indium-gallium-zinc-oxide (a-IGZO) thin films were investigated after thermal annealing and plasma treatment under different gas conditions. The electrical resistivity of a-IGZO thin films post-treated in a hydrogen ambient were lower than those without treatment and those annealed in air, regardless of the methods used for both thermal annealing and plasma treatment. The electrical properties can be explained by the quantity of hydrogen incorporated into the samples and the changes in the electronic structure in terms of the chemical bonding states, the distribution of the near-conduction-band unoccupied states, and the band alignment. As a result, the carrier concentrations of the hydrogen treated a-IGZO thin films increased, while the mobility decreased, due to the increase in the oxygen vacancies from the occurrence of unoccupied states in both shallow and deep levels.

  1. Managing time-substitutable electricity usage using dynamic controls

    Science.gov (United States)

    Ghosh, Soumyadip; Hosking, Jonathan R.; Natarajan, Ramesh; Subramaniam, Shivaram; Zhang, Xiaoxuan

    2017-02-21

    A predictive-control approach allows an electricity provider to monitor and proactively manage peak and off-peak residential intra-day electricity usage in an emerging smart energy grid using time-dependent dynamic pricing incentives. The daily load is modeled as time-shifted, but cost-differentiated and substitutable, copies of the continuously-consumed electricity resource, and a consumer-choice prediction model is constructed to forecast the corresponding intra-day shares of total daily load according to this model. This is embedded within an optimization framework for managing the daily electricity usage. A series of transformations are employed, including the reformulation-linearization technique (RLT) to obtain a Mixed-Integer Programming (MIP) model representation of the resulting nonlinear optimization problem. In addition, various regulatory and pricing constraints are incorporated in conjunction with the specified profit and capacity utilization objectives.

  2. Managing time-substitutable electricity usage using dynamic controls

    Science.gov (United States)

    Ghosh, Soumyadip; Hosking, Jonathan R.; Natarajan, Ramesh; Subramaniam, Shivaram; Zhang, Xiaoxuan

    2017-02-07

    A predictive-control approach allows an electricity provider to monitor and proactively manage peak and off-peak residential intra-day electricity usage in an emerging smart energy grid using time-dependent dynamic pricing incentives. The daily load is modeled as time-shifted, but cost-differentiated and substitutable, copies of the continuously-consumed electricity resource, and a consumer-choice prediction model is constructed to forecast the corresponding intra-day shares of total daily load according to this model. This is embedded within an optimization framework for managing the daily electricity usage. A series of transformations are employed, including the reformulation-linearization technique (RLT) to obtain a Mixed-Integer Programming (MIP) model representation of the resulting nonlinear optimization problem. In addition, various regulatory and pricing constraints are incorporated in conjunction with the specified profit and capacity utilization objectives.

  3. Gate-voltage control of equal-spin Andreev reflection in half-metal/semiconductor/superconductor junctions

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Xiuqiang, E-mail: xianqiangzhe@126.com [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Meng, Hao, E-mail: menghao1982@shu.edu.cn [School of Physics and Telecommunication Engineering, Shanxi University of Technology, Hanzhong 723001 (China)

    2016-04-22

    With the Blonder–Tinkham–Klapwijk (BTK) approach, we investigate conductance spectrum in Ferromagnet/Semiconductor/Superconductor (FM/Sm/SC) double tunnel junctions where strong Rashba spin–orbit interaction (RSOI) is taken into account in semiconductors. For the half-metal limit, we find that the in-gap conductance becomes finite except at zero voltage when inserting a ferromagnetic insulator (FI) at the Sm/SC interface, which means that the appearance of a long-range triplet states in the half-metal. This is because of the emergence of the unconventional equal-spin Andreev reflection (ESAR). When the FI locates at the FM/Sm interface, however, we find the vanishing in-gap conductance due to the absence of the ESAR. Moreover, the non-zero in-gap conductance shows a nonmonotonic dependence on RSOI which can be controlled by applying an external gate voltage. Our results can be used to generate and manipulate the long-range spin triplet correlation in the nascent field of superconducting spintronics. - Highlights: • We study the equal-spin Andreev reflection in half-metal/semiconductor/superconductor (HM/Sm/SC) junctions. • The equal-spin Andreev reflection appearance when inserting a ferromagnetic insulator at the Sm/SC interface. • The finite in-gap conductance is attributed to the emergence of the equal-spin Andreev reflection. • The finite in-gap conductance shows a nonmonotonic dependence on Rashba spin–orbit interaction. • The finite in-gap conductance can be controlled by applying an external gate voltage.

  4. Conductivity-limiting bipolar thermal conductivity in semiconductors

    Science.gov (United States)

    Wang, Shanyu; Yang, Jiong; Toll, Trevor; Yang, Jihui; Zhang, Wenqing; Tang, Xinfeng

    2015-01-01

    Intriguing experimental results raised the question about the fundamental mechanisms governing the electron-hole coupling induced bipolar thermal conduction in semiconductors. Our combined theoretical analysis and experimental measurements show that in semiconductors bipolar thermal transport is in general a “conductivity-limiting” phenomenon, and it is thus controlled by the carrier mobility ratio and by the minority carrier partial electrical conductivity for the intrinsic and extrinsic cases, respectively. Our numerical method quantifies the role of electronic band structure and carrier scattering mechanisms. We have successfully demonstrated bipolar thermal conductivity reduction in doped semiconductors via electronic band structure modulation and/or preferential minority carrier scatterings. We expect this study to be beneficial to the current interests in optimizing thermoelectric properties of narrow gap semiconductors. PMID:25970560

  5. Optimal Energy Control Strategy Design for a Hybrid Electric Vehicle

    Directory of Open Access Journals (Sweden)

    Yuan Zou

    2013-01-01

    Full Text Available A heavy-duty parallel hybrid electric truck is modeled, and its optimal energy control is studied in this paper. The fundamental architecture of the parallel hybrid electric truck is modeled feed-forwardly, together with necessary dynamic features of subsystem or components. Dynamic programming (DP technique is adopted to find the optimal control strategy including the gear-shifting sequence and the power split between the engine and the motor subject to a battery SOC-sustaining constraint. Improved control rules are extracted from the DP-based control solution, forming near-optimal control strategies. Simulation results demonstrate that a significant improvement on the fuel economy can be achieved in the heavy-duty vehicle cycle from the natural driving statistics.

  6. Job satisfaction among control room operators of electrical systems.

    Science.gov (United States)

    Macaia, Amanda A Silva; Marqueze, Elaine C; Rotenberg, Lúcia; Fischer, Frida Marina; Moreno, Claudia R C

    2012-01-01

    Shift workers from control centers of electrical systems are a group that has received little attention in Brazil. This study aimed to compare workers' job satisfaction at five control centers of a Brazilian company electrical system, and according to their job titles. The Organization Satisfaction Index (OSI) questionnaire to assess job satisfaction was used. ANOVA was used to compare OSI means, according to job title and control center. The results showed that there is no difference in job satisfaction among job titles, but a significant difference was found according to the control center. A single organizational culture cannot be applied to several branches. It is required to implement actions that would result in job satisfaction improvements among workers of all studied control rooms centers. The high level of education of operators working in all centers might have contributed to the similar values of perceived satisfaction among distinct job titles.

  7. Tool for the control management of electric and magnetic fields of electrical companies

    International Nuclear Information System (INIS)

    Arnera, Patricia; Barbieri, Beatriz

    2008-01-01

    The use of electricity involves a wide range of activities that, because of its diversity, characteristics and relative importance causes different environmental impacts during the extraction, processing, transport and consuming activities. It is the role of the government to elaborate the rules for the incorporation of environmental aspects in the different segments of the market for different electrical energy sources and in all the stages of the process, from the initial evaluation to the construction and exploitation phases. Among the environmental key aspects to considerate, are the electric and magnetic fields, in which society has taken special interest as they are believed to be involved in health hazard. The faculties of the regulatory authority are dictate regulations and technique procedures to be fulfilled by the agents, and check their compliance. In the course of time since the mentioned obligations, the authority has gathered information regarding electric and magnetic fields that includes those planned in the Companies Environmental Planning and those obtained ad-hoc in the role of controller. In order to systematize this information, a data base has been designed considering different types of electric installations, the company which they belong to, equipment used in the measurements, representative layouts with measure points and profiles of the electric and magnetic fields that were obtained. (author)

  8. Tool for the control management of electric and magnetic fields of electrical companies

    Energy Technology Data Exchange (ETDEWEB)

    Arnera, Patricia; Barbieri, Beatriz [La Plata Univ. Nacional (Argentina). Facultad de Ingenieria, Instituto de Investigaciones Tecnologicas para Redes y Equipos; Turco, Joaquin; Messina, Juan; Postiglioni, Osvaldo [Ente Nacional Regulador de la Electricidad, Buenos Aires (Argentina)

    2008-07-01

    The use of electricity involves a wide range of activities that, because of its diversity, characteristics and relative importance causes different environmental impacts during the extraction, processing, transport and consuming activities. It is the role of the government to elaborate the rules for the incorporation of environmental aspects in the different segments of the market for different electrical energy sources and in all the stages of the process, from the initial evaluation to the construction and exploitation phases. Among the environmental key aspects to considerate, are the electric and magnetic fields, in which society has taken special interest as they are believed to be involved in health hazard. The faculties of the regulatory authority are dictate regulations and technique procedures to be fulfilled by the agents, and check their compliance. In the course of time since the mentioned obligations, the authority has gathered information regarding electric and magnetic fields that includes those planned in the Companies Environmental Planning and those obtained ad-hoc in the role of controller. In order to systematize this information, a data base has been designed considering different types of electric installations, the company which they belong to, equipment used in the measurements, representative layouts with measure points and profiles of the electric and magnetic fields that were obtained. (author)

  9. Electrostatic and Electrochemical Nature of Liquid-Gated Electric-Double-Layer Transistors Based on Oxide Semiconductors

    NARCIS (Netherlands)

    Yuan, Hongtao; Shimotani, Hidekazu; Ye, Jianting; Yoon, Sungjae; Aliah, Hasniah; Tsukazaki, Atsushi; Kawasaki, Masashi; Iwasa, Yoshihiro

    2010-01-01

    The electric-double-layer (EDL) formed at liquid/solid interfaces provides a broad and interdisciplinary attraction in terms of electrochemistry, photochemistry, catalysts, energy storage, and electronics because of the large interfacial capacitance coupling and its ability for high-density charge

  10. Experimental control of power dropouts by current modulation in a semiconductor laser with optical feedback

    International Nuclear Information System (INIS)

    Ticos, Catalin M; Andrei, Ionut R; Pascu, Mihail L; Bulinski, Mircea

    2011-01-01

    The injection current of an external-cavity semiconductor laser working in a regime of low-frequency fluctuations (LFFs) is modulated at several MHz. The rate of power dropouts in the laser emission is correlated with the amplitude and frequency of the modulating signal. The occurrence of dropouts becomes more regular when the laser is driven at 7 MHz, which is close to the dominant frequency of dropouts in the solitary laser. Driving the laser at 10 MHz also induces dropouts with a periodicity of 0.1 μs, resulting in LFFs with two dominant frequencies.

  11. Automated complex for research of electric drives control

    Science.gov (United States)

    Avlasko, P. V.; Antonenko, D. A.

    2018-05-01

    In the article, the automated complex intended for research of various control modes of electric motors including the inductor motor of double-way feed is described. As a basis of the created complex, the National Instruments platform is chosen. The operating controller built in a platform is delivered with an operating system of real-time for creation of systems of measurement and management. The software developed in the environment of LabVIEW consists of several connected modules which are in different elements of a complex. Besides the software for automated management by experimental installation, the program complex is developed for modelling of processes in the electric drive. As a result there is an opportunity to compare simulated and received experimentally transitional characteristics of the electric drive in various operating modes.

  12. Electrical property heterogeneity at transparent conductive oxide/organic semiconductor interfaces: mapping contact ohmicity using conducting-tip atomic force microscopy.

    Science.gov (United States)

    MacDonald, Gordon A; Veneman, P Alexander; Placencia, Diogenes; Armstrong, Neal R

    2012-11-27

    We demonstrate mapping of electrical properties of heterojunctions of a molecular semiconductor (copper phthalocyanine, CuPc) and a transparent conducting oxide (indium-tin oxide, ITO), on 20-500 nm length scales, using a conductive-probe atomic force microscopy technique, scanning current spectroscopy (SCS). SCS maps are generated for CuPc/ITO heterojunctions as a function of ITO activation procedures and modification with variable chain length alkyl-phosphonic acids (PAs). We correlate differences in small length scale electrical properties with the performance of organic photovoltaic cells (OPVs) based on CuPc/C(60) heterojunctions, built on these same ITO substrates. SCS maps the "ohmicity" of ITO/CuPc heterojunctions, creating arrays of spatially resolved current-voltage (J-V) curves. Each J-V curve is fit with modified Mott-Gurney expressions, mapping a fitted exponent (γ), where deviations from γ = 2.0 suggest nonohmic behavior. ITO/CuPc/C(60)/BCP/Al OPVs built on nonactivated ITO show mainly nonohmic SCS maps and dark J-V curves with increased series resistance (R(S)), lowered fill-factors (FF), and diminished device performance, especially near the open-circuit voltage. Nearly optimal behavior is seen for OPVs built on oxygen-plasma-treated ITO contacts, which showed SCS maps comparable to heterojunctions of CuPc on clean Au. For ITO electrodes modified with PAs there is a strong correlation between PA chain length and the degree of ohmicity and uniformity of electrical response in ITO/CuPc heterojunctions. ITO electrodes modified with 6-8 carbon alkyl-PAs show uniform and nearly ohmic SCS maps, coupled with acceptable CuPc/C(60)OPV performance. ITO modified with C14 and C18 alkyl-PAs shows dramatic decreases in FF, increases in R(S), and greatly enhanced recombination losses.

  13. Price-based optimal control of electrical power systems

    NARCIS (Netherlands)

    Jokic, A.

    2007-01-01

    During the past decade, electrical power systems have been going through some major restructuring processes. From monopolistic, highly regulated and one utility controlled operation, a system is being restructured to include many parties competing for energy production and consumption, and for

  14. Graphene: A Dynamic Platform for Electrical Control of Plasmonic Resonance

    DEFF Research Database (Denmark)

    Emani, Naresh Kumar; Kildishev, Alexander V.; Shalaev, Vladimir M.

    2015-01-01

    Graphene has recently emerged as a viable platform for integrated optoelectronic and hybrid photonic devices because of its unique properties. The optical properties of graphene can be dynamically controlled by electrical voltage and have been used to modulate the plasmons in noble metal nanostru...

  15. Introductory semiconductor device physics

    CERN Document Server

    Parker, Greg

    2004-01-01

    ATOMS AND BONDINGThe Periodic TableIonic BondingCovalent BondingMetallic bondingvan der Waals BondingStart a DatabaseENERGY BANDS AND EFFECTIVE MASSSemiconductors, Insulators and MetalsSemiconductorsInsulatorsMetalsThe Concept of Effective MassCARRIER CONCENTRATIONS IN SEMICONDUCTORSDonors and AcceptorsFermi-LevelCarrier Concentration EquationsDonors and Acceptors Both PresentCONDUCTION IN SEMICONDUCTORSCarrier DriftCarrier MobilitySaturated Drift VelocityMobility Variation with TemperatureA Derivation of Ohm's LawDrift Current EquationsSemiconductor Band Diagrams with an Electric Field Presen

  16. Electrical Interfaces for Organic Nanodevices

    DEFF Research Database (Denmark)

    Henrichsen, Henrik Hartmann

    Optoelectronic applications of organic semiconductor materials is a research field, which recently came to the large scale consumer market in display technologies. Organic semiconductors are mainly applied in amorphous form offering fabrication control on a large scale. Crystalline organic...... semiconductors, where the molecular packing is more crucial, have not yet had a major impact in commercial products. This thesis describes development of new ways to electrically contact organic semiconductors. In particular, crystalline organic para-hexaphenylene (p6P) nanofibers have been used...... approaches. Creating the separator by partly oxidizing an Al cathode anodically is considered the most promising implementation, however further development would be necessary. During the project a group of collaborators managed to obtain electrically stimulated light emission in organic p6P nanofibers...

  17. Tunable and rotatable birefringence controller based on electrical control of liquid crystal filled photonic bandgap fibers

    DEFF Research Database (Denmark)

    Wei, Lei; Alkeskjold, Thomas Tanggaard; Bjarklev, Anders Overgaard

    2009-01-01

    We demonstrate the first compact electrically tunable and rotatable birefringence controller based on LCPBG fibers. The birefringence can be tuned electrically to work as a quarter-wave or a half-wave plate in the wavelength range 1520nm-1600nm.......We demonstrate the first compact electrically tunable and rotatable birefringence controller based on LCPBG fibers. The birefringence can be tuned electrically to work as a quarter-wave or a half-wave plate in the wavelength range 1520nm-1600nm....

  18. Effects of polarization of polar semiconductor on electrical properties of poly(vinylidene fluoride-trifluoroethylene)/ZnO heterostructures

    International Nuclear Information System (INIS)

    Yamada, Hiroaki; Yoshimura, Takeshi; Fujimura, Norifumi

    2015-01-01

    The electrical properties of heterostructures composed of poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) and ZnO with different crystallographic polarities, i.e., O- and Zn-polar ZnO, were investigated. Distinct differences in the capacitance-voltage and polarization-voltage characteristics between the P(VDF-TrFE)/O- and Zn-polar ZnO were obtained in the depletion regions of ZnO. The band configurations were determined by X-ray photoelectron spectroscopy (XPS) using a synchrotron radiation beam to analyze the differences in the electrical properties of the P(VDF-TrFE)/O- and Zn-polar ZnO. The XPS spectra indicated that the valence band maximum of P(VDF-TrFE) is 2.9 and 2.7 eV higher than Zn- and O-polar ZnO, respectively. Thus, both structures have staggered band configurations with large valence band offsets, and the spontaneous polarization of ZnO is less effective on the band lineup. The electrical properties of the P(VDF-TrFE)/ZnO heterostructures are modulated through carrier generation because of the polarization-mediated interface charges and the staggered band alignments of the P(VDF-TrFE)/ZnO with a large valence band offset

  19. Optical orientation in ferromagnet/semiconductor hybrids

    International Nuclear Information System (INIS)

    Korenev, V L

    2008-01-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin–spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism

  20. Optical orientation in ferromagnet/semiconductor hybrids

    Science.gov (United States)

    Korenev, V. L.

    2008-11-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin-spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism.

  1. Optical Orientation in Ferromagnet/Semiconductor Hybrids

    OpenAIRE

    Korenev, V. L.

    2008-01-01

    The physics of optical pumping of semiconductor electrons in the ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of the ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of the semiconductor. Spin-spin interactions near the interface ferromagnet/semiconductor play crucial role in the optical readout and the manipulation of ferromagnetism.

  2. HTGR-GT and electrical load integrated control

    International Nuclear Information System (INIS)

    Chan, T.; Openshaw, F.; Pfremmer, D.

    1980-05-01

    A discussion of the control and operation of the HTGR-GT power plant is presented in terms of its closely coupled electrical load and core cooling functions. The system and its controls are briefly described and comparisons are made with more conventional plants. The results of analyses of selected transients are presented to illustrate the operation and control of the HTGR-GT. The events presented were specifically chosen to show the controllability of the plant and to highlight some of the unique characteristics inherent in this multiloop closed-cycle plant

  3. Concept report: Microprocessor control of electrical power system

    Science.gov (United States)

    Perry, E.

    1977-01-01

    An electrical power system which uses a microprocessor for systems control and monitoring is described. The microprocessor controlled system permits real time modification of system parameters for optimizing a system configuration, especially in the event of an anomaly. By reducing the components count, the assembling and testing of the unit is simplified, and reliability is increased. A resuable modular power conversion system capable of satisfying a large percentage of space applications requirements is examined along with the programmable power processor. The PC global controller which handles systems control and external communication is analyzed, and a software description is given. A systems application summary is also included.

  4. A flight simulator control system using electric torque motors

    Science.gov (United States)

    Musick, R. O.; Wagner, C. A.

    1975-01-01

    Control systems are required in flight simulators to provide representative stick and rudder pedal characteristics. A system has been developed that uses electric dc torque motors instead of the more common hydraulic actuators. The torque motor system overcomes certain disadvantages of hydraulic systems, such as high cost, high power consumption, noise, oil leaks, and safety problems. A description of the torque motor system is presented, including both electrical and mechanical design as well as performance characteristics. The system develops forces sufficiently high for most simulations, and is physically small and light enough to be used in most motion-base cockpits.

  5. Handbook of electrical power system dynamics modeling, stability, and control

    CERN Document Server

    Eremia, Mircea

    2013-01-01

    Complete guidance for understanding electrical power system dynamics and blackouts This handbook offers a comprehensive and up-to-date treatment of power system dynamics. Addressing the full range of topics, from the fundamentals to the latest technologies in modeling, stability, and control, Handbook of Electrical Power System Dynamics provides engineers with hands-on guidance for understanding the phenomena leading to blackouts so they can design the most appropriate solutions for a cost-effective and reliable operation. Focusing on system dynamics, the book details

  6. Electric-dipole absorption resonating with longitudinal optical phonon-plasmon system and its effect on dispersion relations of interface phonon polariton modes in metal/semiconductor-stripe structures

    Science.gov (United States)

    Sakamoto, Hironori; Takeuchi, Eito; Yoshida, Kouki; Morita, Ken; Ma, Bei; Ishitani, Yoshihiro

    2018-01-01

    Interface phonon polaritons (IPhPs) in nano-structures excluding metal components are thoroughly investigated because they have lower loss in optical emission or absorption and higher quality factors than surface plasmon polaritons. In previous reports, it is found that strong infrared (IR) absorption is based on the interaction of p-polarized light and materials, and the resonance photon energy highly depends on the structure size and angle of incidence. We report the optical absorption by metal/semiconductor (bulk-GaAs and thin film-AlN)-stripe structures in THz to mid-IR region for the electric field of light perpendicular to the stripes, where both of s- and p-polarized light are absorbed. The absorption resonates with longitudinal optical (LO) phonon or LO phonon-plasmon coupling (LOPC) modes, and thus is independent of the angle of incidence or structure size. This absorption is attributed to the electric dipoles by the optically induced polarization charges at the metal/semiconductor, heterointerfaces, or interfaces of high electron density layers and depression ones. The electric permittivity is modified by the formation of these dipoles. It is found to be indispensable to utilize our form of altered permittivity to explain the experimental dispersion relations of metal/semiconductor-IPhP and SPhP in these samples. This analysis reveals that the IPhPs in the stripe structures of metal/AlN-film on a SiC substrate are highly confined in the AlN film, while the permittivity of the structures of metal/bulk-GaAs is partially affected by the electric-dipoles. The quality factors of the electric-dipole absorption are found to be 42-54 for undoped samples, and the value of 62 is obtained for Al/AlN-IPhP. It is thought that metal-contained structures are not obstacles to mode energy selectivity in phonon energy region of semiconductors.

  7. Hybrid anode for semiconductor radiation detectors

    Science.gov (United States)

    Yang, Ge; Bolotnikov, Aleksey E; Camarda, Guiseppe; Cui, Yonggang; Hossain, Anwar; Kim, Ki Hyun; James, Ralph B

    2013-11-19

    The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s).

  8. Controlling and modelling the wetting properties of III-V semiconductor surfaces using re-entrant nanostructures.

    Science.gov (United States)

    Ng, Wing H; Lu, Yao; Liu, Huiyun; Carmalt, Claire J; Parkin, Ivan P; Kenyon, Anthony J

    2018-02-23

    Inorganic semiconductors such as III-V materials are very important in our everyday life as they are used for manufacturing optoelectronic and microelectronic components with important applications span from energy harvesting to telecommunications. In some applications, these components are required to operate in harsh environments. In these cases, having waterproofing capability is essential. Here we demonstrate design and control of the wettability of indium phosphide based multilayer material (InP/InGaAs/InP) using re-entrant structures fabricated by a fast electron beam lithography technique. This patterning technique enabled us to fabricate highly uniform nanostructure arrays with at least one order of magnitude shorter patterning times compared to conventional electron beam lithography methods. We reduced the surface contact fraction significantly such that the water droplets may be completely removed from our nanostructured surface. We predicted the wettability of our patterned surface by modelling the adhesion energies between the water droplet and both the patterned surface and the dispensing needle. This is very useful for the development of coating-free waterproof optoelectronic and microelectronic components where the coating may hinder the performance of such devices and cause problems with semiconductor fabrication compatibility.

  9. Thrust Control Loop Design for Electric-Powered UAV

    Science.gov (United States)

    Byun, Heejae; Park, Sanghyuk

    2018-04-01

    This paper describes a process of designing a thrust control loop for an electric-powered fixed-wing unmanned aerial vehicle equipped with a propeller and a motor. In particular, the modeling method of the thrust system for thrust control is described in detail and the propeller thrust and torque force are modeled using blade element theory. A relation between current and torque of the motor is obtained using an experimental setup. Another relation between current, voltage and angular velocity is also obtained. The electric motor and the propeller dynamics are combined to model the thrust dynamics. The associated trim and linearization equations are derived. Then, the thrust dynamics are coupled with the flight dynamics to allow a proper design for the thrust loop in the flight control. The proposed method is validated by an application to a testbed UAV through simulations and flight test.

  10. Optimal charging control of electric vehicles in smart grids

    CERN Document Server

    Tang, Wanrong

    2017-01-01

    This book introduces the optimal online charging control of electric vehicles (EVs) and battery energy storage systems (BESSs) in smart grids. The ultimate goal is to minimize the total energy cost as well as reduce the fluctuation of the total power flow caused by the integration of the EVs and renewable energy generators. Using both theoretic analysis and data-driven numerical results, the authors reveal the effectiveness and efficiency of the proposed control techniques. A major benefit of these control techniques is their practicality, since they do not rely on any non-causal knowledge of future information. Researchers, operators of power grids, and EV users will find this to be an exceptional resource. It is also suitable for advanced-level students of computer science interested in networks, electric vehicles, and energy systems.

  11. Safe electrical design of mine elevator control systems

    Energy Technology Data Exchange (ETDEWEB)

    Barkand, T.D. [Mine Safety and Health Administration, Pittsburgh, PA (United States)

    1997-03-01

    A mine elevator recently experienced an ascending-car overspeed accident, resulting in serious injuries to four passengers. Although the four miners laid down on the floor prior to impact, the miners struck the ceiling of the elevator car as it collided into the overhead structure at an estimated speed four times faster than normal. Several electrical design precautions can be implemented to prevent elevator control system failures. This paper examines safe electrical design of elevator control systems. Supplemental circuits and devices which improve the safety integrity and maintenance of the elevator control system are presented. These circuits and devices provide protection that eliminates the potential hazard and significantly reduces the possibility of a mine elevator accident.

  12. Controlling Electricity Consumption by Forecasting its Response to Varying Prices

    DEFF Research Database (Denmark)

    Corradi, Olivier; Ochsenfeld, Henning Peter; Madsen, Henrik

    2013-01-01

    electricity consumption using a one-way price signal. Estimation of the price-response is based on data measurable at grid level, removing the need to install sensors and communication devices between each individual consumer and the price-generating entity. An application for price-responsive heating systems......In a real-time electricity pricing context where consumers are sensitive to varying prices, having the ability to anticipate their response to a price change is valuable. This paper proposes models for the dynamics of such price-response, and shows how these dynamics can be used to control...... is studied based on real data, before conducting a control by price experiment using a mixture of real and synthetic data. With the control objective of following a constant consumption reference, peak heating consumption is reduced by nearly 5%, and 11% of the mean daily heating consumption is shifted....

  13. Safe electrical design of mine elevator control systems

    Energy Technology Data Exchange (ETDEWEB)

    Barkand, T.D. [Mine Safety and Health Administration, Pittsburgh, PA (United States)

    1995-12-31

    A mine elevator recently experienced an ascending car overspeed accident resulting in serious injuries to four passengers. Although the four miners laid down on the floor prior to impact, the miners struck the ceiling of the elevator car as it collided into the overhead structure at an estimated speed four times faster than normal. Several electrical design precautions can be implemented to prevent elevator control system failures. This paper examines safe electrical design of elevator control systems. Supplemental circuits and devices which improve the safety integrity and maintenance of the elevator control system are presented. These circuits and devices provide protection that eliminates the potential hazard and significantly reduces the possibility of a mine elevator accident.

  14. 2011 International Conference in Electrics, Communication and Automatic Control Proceedings

    CERN Document Server

    2012-01-01

    This two-volume set contains the very latest, cutting-edge material in electrics, communication and automatic control. As a vital field of research that is highly relevant to current developments in a number of technological domains, the subjects it covers include micro-electronics and integrated circuit control, signal processing technology, next-generation network infrastructure, wireless communication and scientific instruments. The aim of the International Conference in Electrics, Communication and Automatic Control, held in Chongqing, China, in June 2011 was to provide a valuable inclusive platform for researchers, engineers, academicians and industrial professionals from all over the world to share their research results with fellow scientists in the sector. The call for papers netted well over 600 submissions, of which 224 were selected for presentation. This fully peer-reviewed collection of papers from the conference can be viewed as a single-source compendium of the latest trends and techniques in t...

  15. Control of colloids with gravity, temperature gradients, and electric fields

    CERN Document Server

    Sullivan, M; Harrison, C; Austin, R H; Megens, M; Hollingsworth, A; Russel, W B; Cheng Zhen; Mason, T; Chaikin, P M

    2003-01-01

    We have used a variety of different applied fields to control the density, growth, and structure of colloidal crystals. Gravity exerts a body force proportional to the buoyant mass and in equilibrium produces a height-dependent concentration profile. A similar body force can be obtained with electric fields on charged particles (electrophoresis), a temperature gradient on all particles, or an electric field gradient on uncharged particles (dielectrophoresis). The last is particularly interesting since its magnitude and sign can be changed by tuning the applied frequency. We study these effects in bulk (making 'dielectrophoretic bottles' or traps), to control concentration profiles during nucleation and growth and near surfaces. We also study control of non-spherical and optically anisotropic particles with the light field from laser tweezers.

  16. Control of colloids with gravity, temperature gradients, and electric fields

    Energy Technology Data Exchange (ETDEWEB)

    Sullivan, Matt [Department of Physics, Princeton University, Princeton, NJ (United States); Zhao Kun [Department of Physics, Princeton University, Princeton, NJ (United States); Harrison, Christopher [Department of Physics, Princeton University, Princeton, NJ (United States); Austin, Robert H [Department of Physics, Princeton University, Princeton, NJ (United States); Megens, Mischa [Department of Physics, Princeton University, Princeton, NJ (United States); Hollingsworth, Andrew [Department of Chemical Engineering, Princeton University, Princeton, NJ (United States); Russel, William B [Department of Chemical Engineering, Princeton University, Princeton, NJ (United States); Cheng Zhengdong [ExxonMobil Research, Annandale, NJ (United States); Mason, Thomas [ExxonMobil Research, Annandale, NJ (United States); Chaikin, P M [Department of Physics, Princeton University, Princeton, NJ (United States)

    2003-01-15

    We have used a variety of different applied fields to control the density, growth, and structure of colloidal crystals. Gravity exerts a body force proportional to the buoyant mass and in equilibrium produces a height-dependent concentration profile. A similar body force can be obtained with electric fields on charged particles (electrophoresis), a temperature gradient on all particles, or an electric field gradient on uncharged particles (dielectrophoresis). The last is particularly interesting since its magnitude and sign can be changed by tuning the applied frequency. We study these effects in bulk (making 'dielectrophoretic bottles' or traps), to control concentration profiles during nucleation and growth and near surfaces. We also study control of non-spherical and optically anisotropic particles with the light field from laser tweezers.

  17. Forecasting and control of the electricity consumption in hotels

    International Nuclear Information System (INIS)

    Guerra Plasencia, Mario A. Álvarez; Cabello Eras, Juan J.; Sousa Santos, Vladimir; Sagastume Gutiérrez, Alexis; Monteagudo YanesI, José P.; Lapido Rodríguez, Margarita J.; Lara, Boris Vega

    2017-01-01

    In order to monitor and control the monthly and annual consumption of energy in hotels, different indicators have been proposed. These do not allow allow the rapid detection and mitigation of bad practices and overconsumption, nor do they take into account the influence of physical parameters such as outside temperature, or when they do, they use fairly complex coefficients, which prevents their practical application in most installations. The study analyzes energy performance indicators to evaluate and control the consumption of electricity in hotels, introducing a new one based on the outside temperature. On this basis daily graphs of control are developed that allow a faster detection of the mentioned problems and realize an adequate energy management. The tools were applied in two Cuban hotels of different characteristics, where reductions in annual electricity consumption were achieved in the order of 10% without investments. (author)

  18. Chemical control of electrical contact to sp2 carbon atoms

    Science.gov (United States)

    Frederiksen, Thomas; Foti, Giuseppe; Scheurer, Fabrice; Speisser, Virginie; Schull, Guillaume

    2014-04-01

    Carbon-based nanostructures are attracting tremendous interest as components in ultrafast electronics and optoelectronics. The electrical interfaces to these structures play a crucial role for the electron transport, but the lack of control at the atomic scale can hamper device functionality and integration into operating circuitry. Here we study a prototype carbon-based molecular junction consisting of a single C60 molecule and probe how the electric current through the junction depends on the chemical nature of the foremost electrode atom in contact with the molecule. We find that the efficiency of charge injection to a C60 molecule varies substantially for the considered metallic species, and demonstrate that the relative strength of the metal-C bond can be extracted from our transport measurements. Our study further suggests that a single-C60 junction is a basic model to explore the properties of electrical contacts to meso- and macroscopic sp2 carbon structures.

  19. Controlling electrical percolation in multicomponent carbon nanotube dispersions.

    Science.gov (United States)

    Kyrylyuk, Andriy V; Hermant, Marie Claire; Schilling, Tanja; Klumperman, Bert; Koning, Cor E; van der Schoot, Paul

    2011-04-10

    Carbon nanotube reinforced polymeric composites can have favourable electrical properties, which make them useful for applications such as flat-panel displays and photovoltaic devices. However, using aqueous dispersions to fabricate composites with specific physical properties requires that the processing of the nanotube dispersion be understood and controlled while in the liquid phase. Here, using a combination of experiment and theory, we study the electrical percolation of carbon nanotubes introduced into a polymer matrix, and show that the percolation threshold can be substantially lowered by adding small quantities of a conductive polymer latex. Mixing colloidal particles of different sizes and shapes (in this case, spherical latex particles and rod-like nanotubes) introduces competing length scales that can strongly influence the formation of the system-spanning networks that are needed to produce electrically conductive composites. Interplay between the different species in the dispersions leads to synergetic or antagonistic percolation, depending on the ease of charge transport between the various conductive components.

  20. Photoelectronic properties of semiconductors

    CERN Document Server

    Bube, Richard H

    1992-01-01

    The interaction between light and electrons in semiconductors forms the basis for many interesting and practically significant properties. This book examines the fundamental physics underlying this rich complexity of photoelectronic properties of semiconductors, and will familiarise the reader with the relatively simple models that are useful in describing these fundamentals. The basic physics is also illustrated with typical recent examples of experimental data and observations. Following introductory material on the basic concepts, the book moves on to consider a wide range of phenomena, including photoconductivity, recombination effects, photoelectronic methods of defect analysis, photoeffects at grain boundaries, amorphous semiconductors, photovoltaic effects and photoeffects in quantum wells and superlattices. The author is Professor of Materials Science and Electrical Engineering at Stanford University, and has taught this material for many years. He is an experienced author, his earlier books having fo...

  1. Recent advances in electrical engineering and control applications

    CERN Document Server

    Bououden, Sofiane; Zelinka, Ivan

    2017-01-01

    This book of proceedings includes papers presenting the state of art in electrical engineering and control theory as well as their applications. The topics focus on classical as well as modern methods for modeling, control, identification and simulation of complex systems with applications in science and engineering. The papers were selected from the hottest topic areas, such as control and systems engineering, renewable energy, faults diagnosis—faults tolerant control, large-scale systems, fractional order systems, unconventional algorithms in control engineering, signals and communications. The control and design of complex systems dynamics, analysis and modeling of its behavior and structure is vitally important in engineering, economics and in science generally science today. Examples of such systems can be seen in the world around us and are a part of our everyday life. Application of modern methods for control, electronics, signal processing and more can be found in our mobile phones, car engines, hom...

  2. Selective laser-induced photochemical dry etching of semiconductors controlled by ion-bombardment-induced damage

    International Nuclear Information System (INIS)

    Ashby, C.I.H.; Myers, D.R.; Vook, F.L.

    1987-01-01

    When a photochemical dry etching process requires direct participation of photogenerated carriers in the chemical reaction, it is sensitive to the electronic properties of the semiconductor. For such solid-excitation-based dry etching processes, the balance between reaction and carrier recombination rates determines the practical utility of a particular reaction for device fabrication. The distance from the surface at which the photocarriers are generated by light adsorption is determined by the absorption coefficient. In the absence of an external bias potential, only those carriers formed within a diffusion length of the surface space-charge region will have an opportunity to drive the dry etching reaction. When the absorption coefficient is high, most of the photons generate carriers within a diffusion length from the surface space-charge region, and the etching rate is largely determined by the balance between the rate of the carrier-driven reaction and the surface recombination velocity. When the recombination rate of free carriers in the bulk of the semiconductor is high, the effective diffusion length is reduced and fewer of the carriers generated in the subsurface region ever reach the surface. An important effect of ion bombardment is the creation of many lattice defects that increase the rate of recombination of electrons and holes. When a sufficient number of defects, which act as recombination sites, are formed during ion implantation, the recombination of photogenerated carriers at these defects in the subsurface region can greatly reduce the number of carriers which can reach the surface and drive a photochemical etching reaction

  3. Compact semiconductor lasers

    CERN Document Server

    Yu, Siyuan; Lourtioz, Jean-Michel

    2014-01-01

    This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

  4. Electrical control of antiferromagnetic metal up to 15 nm

    Science.gov (United States)

    Zhang, PengXiang; Yin, GuFan; Wang, YuYan; Cui, Bin; Pan, Feng; Song, Cheng

    2016-08-01

    Manipulation of antiferromagnetic (AFM) spins by electrical means is on great demand to develop the AFM spintronics with low power consumption. Here we report a reversible electrical control of antiferromagnetic moments of FeMn up to 15 nm, using an ionic liquid to exert a substantial electric-field effect. The manipulation is demonstrated by the modulation of exchange spring in [Co/Pt]/FeMn system, where AFM moments in FeMn pin the magnetization rotation of Co/Pt. By carrier injection or extraction, the magnetic anisotropy of the top layer in FeMn is modulated to influence the whole exchange spring and then passes its influence to the [Co/Pt]/FeMn interface, through a distance up to the length of exchange spring that fully screens electric field. Comparing FeMn to IrMn, despite the opposite dependence of exchange bias on gate voltages, the same correlation between carrier density and exchange spring stiffness is demonstrated. Besides the fundamental significance of modulating the spin structures in metallic AFM via all-electrical fashion, the present finding would advance the development of low-power-consumption AFM spintronics.

  5. To the Problem of Electromechanical Interaction in Elevators with Controlled Electric Drive and Fuzzy Speed Controller

    Directory of Open Access Journals (Sweden)

    A. S. Koval

    2010-01-01

    Full Text Available The paper considers problems concerning electromechanical interaction in elevators with an adjustable asynchronous electric drive equipped with the vector control systems under direct torque control and direct torque control with pulse-width modulator. A mathematical description of electromechanical elevator system with due account of nonlinearity of the worm gear is given in the paper. The paper presents a simplified circuit design of a control system with a fuzzy speed controller. It has been established that the factor of electromechanical interaction in electromechanical system with the adjustable asynchronous electric drive and an fuzzy speed controller is within the range which corresponds to existence of the essential electromechanical interaction.

  6. A control system for and a method of controlling a superconductive rotating electrical machine

    DEFF Research Database (Denmark)

    2014-01-01

    This invention relates to a method of controlling and a control system (100) for a superconductive rotating electric machine (200) comprising at least one superconductive winding (102; 103), where the control system (100) is adapted to control a power unit (101) supplying during use the at least...... or more actual values (110, 111)of one or more parameters for a given superconductive winding (102; 103), each parameter representing a physical condition of the given superconductive winding (102; 103), and to dynamically derive one or more electrical current values to be maintained in the given...... superconductive winding (102; 103) by the power unit (101) where the one or more electrical current values is/are derived taking into account the received one or more actual values (110, 111). In this way,greater flexibility and more precise control of the performance of the superconducting rotating electrical...

  7. Semiconductor Manufacturing equipment introduction

    International Nuclear Information System (INIS)

    Im, Jong Sun

    2001-02-01

    This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.

  8. Stator for a rotating electrical machine having multiple control windings

    Science.gov (United States)

    Shah, Manoj R.; Lewandowski, Chad R.

    2001-07-17

    A rotating electric machine is provided which includes multiple independent control windings for compensating for rotor imbalances and for levitating/centering the rotor. The multiple independent control windings are placed at different axial locations along the rotor to oppose forces created by imbalances at different axial locations along the rotor. The multiple control windings can also be used to levitate/center the rotor with a relatively small magnetic field per unit area since the rotor and/or the main power winding provides the bias field.

  9. Semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Marstein Erik Stensrud

    2003-07-01

    This thesis presents a study of two material systems containing semiconductor nanocrystals, namely porous silicon (PSi) films and germanium (Ge) nanocrystals embedded in silicon dioxide (SiO2) films. The PSi films were made by anodic etching of silicon (Si) substrates in an electrolyte containing hydrofluoric acid. The PSi films were doped with erbium (Er) using two different doping methods. electrochemical doping and doping by immersing the PSi films in a solution containing Er. The resulting Er concentration profiles were investigated using scanning electron microscopy (SEN1) combined with energy dispersive X-ray analysis (EDS). The main subject of the work on PSi presented in this thesis was investigating and comparing these two doping methods. Ge nanocrystals were made by implanting Ge ions into Si02 films that were subsequently annealed. However. nanocrystal formation occurred only for certain sets of processing parameters. The dependence of the microstructure of the Ge implanted Si02 films on the processing parameters were therefore investigated. A range of methods were employed for these investigations, including transmission electron microscopy (TEM) combined with EDS, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The observed structures, ranging from Ge nanocrystals to voids with diameters of several tens of nanometers and Ge rich Si02 films without any nanocrystals is described. A model explaining the void formation is also presented. For certain sets of processing parameters. An accumulation of Ge at the Si-Si02 interface was observed. The effect of this accumulation on the electrical properties of MOS structures made from Ge implanted SiO2 films was investigated using CV-measurements. (Author)

  10. Investigation of 'surface donors' in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties

    Science.gov (United States)

    Ťapajna, M.; Stoklas, R.; Gregušová, D.; Gucmann, F.; Hušeková, K.; Haščík, Š.; Fröhlich, K.; Tóth, L.; Pécz, B.; Brunner, F.; Kuzmík, J.

    2017-12-01

    III-N surface polarization compensating charge referred here to as 'surface donors' (SD) was analyzed in Al2O3/AlGaN/GaN metal-oxide-semiconductor (MOS) heterojunctions using scaled oxide films grown by metal-organic chemical vapor deposition at 600 °C. We systematically investigated impact of HCl pre-treatment prior to oxide deposition and post-deposition annealing (PDA) at 700 °C. SD density was reduced down to 1.9 × 1013 cm-2 by skipping HCl pre-treatment step as compared to 3.3 × 1013 cm-2 for structures with HCl pre-treatment followed by PDA. The nature and origin of SD was then analyzed based on the correlation between electrical, micro-structural, and chemical properties of the Al2O3/GaN interfaces with different SD density (NSD). From the comparison between distributions of interface traps of MOS heterojunction with different NSD, it is demonstrated that SD cannot be attributed to interface trapped charge. Instead, variation in the integrity of the GaOx interlayer confirmed by X-ray photoelectron spectroscopy is well correlated with NSD, indicating SD may be formed by border traps at the Al2O3/GaOx interface.

  11. Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal-oxide-semiconductor capacitor

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Li Ning; Choi, Hoi Wai; Lai, Pui To [Department of Electrical and Electronic Engineering, The University of Hong Kong (China); Xu, Jing Ping [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan (China)

    2016-09-15

    In this study, GaAs metal-oxide-semiconductor (MOS) capacitors using Y-incorporated TaON as gate dielectric have been investigated. Experimental results show that the sample with a Y/(Y + Ta) atomic ratio of 27.6% exhibits the best device characteristics: high k value (22.9), low interfacestate density (9.0 x 10{sup 11} cm{sup -2} eV{sup -1}), small flatband voltage (1.05 V), small frequency dispersion and low gate leakage current (1.3 x 10{sup -5}A/cm{sup 2} at V{sub fb} + 1 V). These merits should be attributed to the complementary properties of Y{sub 2}O{sub 3} and Ta{sub 2}O{sub 5}:Y can effectively passivate the large amount of oxygen vacancies in Ta{sub 2}O{sub 5}, while the positively-charged oxygen vacancies in Ta{sub 2}O{sub 5} are capable of neutralizing the effects of the negative oxide charges in Y{sub 2}O{sub 3}. This work demonstrates that an appropriate doping of Y content in TaON gate dielectric can effectively improve the electrical performance for GaAs MOS devices. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Crystal Structure, Optical, and Electrical Properties of SnSe and SnS Semiconductor Thin Films Prepared by Vacuum Evaporation Techniques for Solar Cell Applications

    Science.gov (United States)

    Ariswan; Sutrisno, H.; Prasetyawati, R.

    2017-05-01

    Thin films of SnSe and SnS semiconductors had been prepared by vacuum evaporation techniques. All prepared samples were characterized on their structure, optical, and electrical properties in order to know their application in technology. The crystal structure of SnSe and SnS was determined by X-Ray Diffraction (XRD) instrument. The morphology and chemical composition were obtained by Scanning Electron Microscopy (SEM) coupled with Energy Dispersive of X-Ray Analysis (EDAX). The optical property such as band gap was determined by DR-UV-Vis (Diffuse Reflectance-Ultra Violet-Visible) spectroscopy, while the electrical properties were determined by measuring the conductivity by four probes method. The characterization results indicated that both SnSe and SnS thin films were polycrystalline. SnSe crystallized in an orthorhombic crystal system with the lattice parameters of a = 11.47 Å, b = 4.152 Å and c = 4.439 Å, while SnS had an orthorhombic crystal system with lattice parameters of a = 4.317 Å, b = 11.647 Å and c = 3.981 Å. Band gaps (Eg) of SnSe and SnS were 1.63 eV and 1.35 eV, respectively. Chemical compositions of both thin films were non-stoichiometric. Molar ratio of Sn : S was close to ideal which was 1 : 0.96, while molar ratio of Sn : S was 1 : 0.84. The surface morphology described the arrangement of the grains on the surface of the thin film with sizes ranging from 0.2 to 0.5 microns. Color similarity on the surface of the SEM images proved a homogenous thin layer.

  13. Model Predictive Control for Connected Hybrid Electric Vehicles

    Directory of Open Access Journals (Sweden)

    Kaijiang Yu

    2015-01-01

    Full Text Available This paper presents a new model predictive control system for connected hybrid electric vehicles to improve fuel economy. The new features of this study are as follows. First, the battery charge and discharge profile and the driving velocity profile are simultaneously optimized. One is energy management for HEV for Pbatt; the other is for the energy consumption minimizing problem of acc control of two vehicles. Second, a system for connected hybrid electric vehicles has been developed considering varying drag coefficients and the road gradients. Third, the fuel model of a typical hybrid electric vehicle is developed using the maps of the engine efficiency characteristics. Fourth, simulations and analysis (under different parameters, i.e., road conditions, vehicle state of charge, etc. are conducted to verify the effectiveness of the method to achieve higher fuel efficiency. The model predictive control problem is solved using numerical computation method: continuation and generalized minimum residual method. Computer simulation results reveal improvements in fuel economy using the proposed control method.

  14. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  15. Multifunctional Organic-Semiconductor Interfacial Layers for Solution-Processed Oxide-Semiconductor Thin-Film Transistor.

    Science.gov (United States)

    Kwon, Guhyun; Kim, Keetae; Choi, Byung Doo; Roh, Jeongkyun; Lee, Changhee; Noh, Yong-Young; Seo, SungYong; Kim, Myung-Gil; Kim, Choongik

    2017-06-01

    The stabilization and control of the electrical properties in solution-processed amorphous-oxide semiconductors (AOSs) is crucial for the realization of cost-effective, high-performance, large-area electronics. In particular, impurity diffusion, electrical instability, and the lack of a general substitutional doping strategy for the active layer hinder the industrial implementation of copper electrodes and the fine tuning of the electrical parameters of AOS-based thin-film transistors (TFTs). In this study, the authors employ a multifunctional organic-semiconductor (OSC) interlayer as a solution-processed thin-film passivation layer and a charge-transfer dopant. As an electrically active impurity blocking layer, the OSC interlayer enhances the electrical stability of AOS TFTs by suppressing the adsorption of environmental gas species and copper-ion diffusion. Moreover, charge transfer between the organic interlayer and the AOS allows the fine tuning of the electrical properties and the passivation of the electrical defects in the AOS TFTs. The development of a multifunctional solution-processed organic interlayer enables the production of low-cost, high-performance oxide semiconductor-based circuits. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Crystal growth and structure, electrical, and optical characterization of the semiconductor Cu2SnSe3

    International Nuclear Information System (INIS)

    Marcano, G.; Rincon, C.; Chalbaud, L. M. de; Bracho, D. B.; Perez, G. Sanchez

    2001-01-01

    X-ray powder diffraction by p-type Cu 2 SnSe 3 , prepared by the vertical Bridgman--Stockbarger technique, shows that this material crystallizes in a monoclinic structure, space group Cc, with unit cell parameters a=6.5936(1)Aa, b=12.1593(4)Aa, c=6.6084(3)Aa, and β=108.56(2) o . The temperature variation of the hole concentration p obtained from the Hall effect and electrical resistivity measurements from about 160 to 300 K, is explained as due to the thermal activation of an acceptor level with an ionization energy of 0.067 eV, whereas below 100 K, the conduction in the impurity band dominates the electrical transport process. From the analysis of the p vs T data, the density-of-states effective mass of the holes is estimated to be nearly of the same magnitude as the free electron mass. In the valence band, the temperature variation of the hole mobility is analyzed by taking into account the scattering of charge carriers by ionized and neutral impurities, and acoustic phonons. In the impurity band, the mobility is explained as due to the thermally activated hopping transport. From the analysis of the optical absorption spectra at room temperature, the fundamental energy gap was determined to be 0.843 eV. The photoconductivity spectra show the presence of a narrow band gap whose main peak is observed at 0.771 eV. This band is attributed to a free-to-bound transition from the defect acceptor level to the conduction band. The origin of this acceptor state, consistent with the chemical composition of the samples and screening effects, is tentatively attributed to selenium interstitials. copyright 2001 American Institute of Physics

  17. Crystal growth and structure, electrical, and optical characterization of the semiconductor Cu{sub 2}SnSe{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Marcano, G.; Rincon, C.; de Chalbaud, L. M.; Bracho, D. B.; Perez, G. Sanchez

    2001-08-15

    X-ray powder diffraction by p-type Cu{sub 2}SnSe{sub 3}, prepared by the vertical Bridgman--Stockbarger technique, shows that this material crystallizes in a monoclinic structure, space group Cc, with unit cell parameters a=6.5936(1)Aa, b=12.1593(4)Aa, c=6.6084(3)Aa, and {beta}=108.56(2){sup o}. The temperature variation of the hole concentration p obtained from the Hall effect and electrical resistivity measurements from about 160 to 300 K, is explained as due to the thermal activation of an acceptor level with an ionization energy of 0.067 eV, whereas below 100 K, the conduction in the impurity band dominates the electrical transport process. From the analysis of the p vs T data, the density-of-states effective mass of the holes is estimated to be nearly of the same magnitude as the free electron mass. In the valence band, the temperature variation of the hole mobility is analyzed by taking into account the scattering of charge carriers by ionized and neutral impurities, and acoustic phonons. In the impurity band, the mobility is explained as due to the thermally activated hopping transport. From the analysis of the optical absorption spectra at room temperature, the fundamental energy gap was determined to be 0.843 eV. The photoconductivity spectra show the presence of a narrow band gap whose main peak is observed at 0.771 eV. This band is attributed to a free-to-bound transition from the defect acceptor level to the conduction band. The origin of this acceptor state, consistent with the chemical composition of the samples and screening effects, is tentatively attributed to selenium interstitials. {copyright} 2001 American Institute of Physics.

  18. Electric Generators and their Control for Large Wind Turbines

    DEFF Research Database (Denmark)

    Boldea, Ion; Tutelea, Lucian; Rallabandi, Vandana

    2017-01-01

    induction generator, the cage rotor induction generator, and the synchronous generator with DC or permanent magnet excitation. The operating principle, performance, optimal design, and the modeling and control of the machine-side converter for each kind of generator are adressed and evaluated. In view......The electric generator and its power electronics interface for wind turbines (WTs) have evolved rapidly toward higher reliability and reduced cost of energy in the last 40 years. This chapter describes the up-to-date electric generators existing in the wind power industry, namely, the doubly fed...... of the fact that individual power rating of WTs has increased to around 10 MW, generator design and control technologies required to reach this power rating are discussed....

  19. Electrical and control aspects of the Sizewell B PWR

    International Nuclear Information System (INIS)

    1992-01-01

    The pressurized water reactor, Sizewell-B, which is being built in Suffolk is well on in its construction schedule. This conference looked at the electrical and control aspects of the first PWR to be built in the United Kingdom. Although based on the standard Westinghouse PWR design, modifications have been made to meet the particular requirements of the site and the UK licensing regulations. There are 11 papers on all aspects of the electrical systems, 5 papers on the cables and cable installation, 5 on the main control rooms and auxiliary shutdown room, 5 on the integrated system and centralised operation, 6 on the monitoring and protection systems and 9 on the reactor protection systems. All 41 are indexed separately. (UK)

  20. Solution processing of polymer semiconductor: Insulator blends-Tailored optical properties through liquid-liquid phase separation control

    KAUST Repository

    Hellmann, Christoph

    2014-12-17

    © 2014 Wiley Periodicals, Inc. It has been demonstrated that the 0-0 absorption transition of poly(3-hexylthiophene) (P3HT) in blends with poly(ethylene oxide) (PEO) could be rationally tuned through the control of the liquid-liquid phase separation process during solution deposition. Pronounced J-like aggregation behavior, characteristic for systems of a low exciton band width, was found for blends where the most pronounced liquid-liquid phase separation occurred in solution, leading to domains of P3HT and PEO of high phase purity. Since liquid-liquid phase separation could be readily manipulated either by the solution temperature, solute concentration, or deposition temperature, to name a few parameters, our findings promise the design from the out-set of semiconductor:insulator architectures of pre-defined properties by manipulation of the interaction parameter between the solutes as well as the respective solute:solvent system using classical polymer science principles.

  1. Solution processing of polymer semiconductor: Insulator blends-Tailored optical properties through liquid-liquid phase separation control

    KAUST Repository

    Hellmann, Christoph; Treat, Neil D.; Scaccabarozzi, Alberto D.; Razzell Hollis, Joseph; Fleischli, Franziska D.; Bannock, James H.; de Mello, John; Michels, Jasper J.; Kim, Ji-Seon; Stingelin, Natalie

    2014-01-01

    © 2014 Wiley Periodicals, Inc. It has been demonstrated that the 0-0 absorption transition of poly(3-hexylthiophene) (P3HT) in blends with poly(ethylene oxide) (PEO) could be rationally tuned through the control of the liquid-liquid phase separation process during solution deposition. Pronounced J-like aggregation behavior, characteristic for systems of a low exciton band width, was found for blends where the most pronounced liquid-liquid phase separation occurred in solution, leading to domains of P3HT and PEO of high phase purity. Since liquid-liquid phase separation could be readily manipulated either by the solution temperature, solute concentration, or deposition temperature, to name a few parameters, our findings promise the design from the out-set of semiconductor:insulator architectures of pre-defined properties by manipulation of the interaction parameter between the solutes as well as the respective solute:solvent system using classical polymer science principles.

  2. Semiconductor-metal phase transition of vanadium dioxide nanostructures on silicon substrate: Applications for thermal control of spacecraft

    International Nuclear Information System (INIS)

    Leahu, G. L.; Li Voti, R.; Larciprete, M. C.; Belardini, A.; Mura, F.; Sibilia, C.; Bertolotti, M.; Fratoddi, I.

    2013-01-01

    We present a detailed infrared study of the semiconductor-to-metal transition (SMT) in a vanadium dioxide (VO2) film deposited on silicon wafer. The VO2 phase transition is studied in the mid-infrared (MIR) region by analyzing the transmittance and the reflectance measurements, and the calculated emissivity. The temperature behaviour of the emissivity during the SMT put into evidence the phenomenon of the anomalous absorption in VO2 which has been explained by applying the Maxwell Garnett effective medium approximation theory, together with a strong hysteresis phenomenon, both useful to design tunable thermal devices to be applied for the thermal control of spacecraft. We have also applied the photothermal radiometry in order to study the changes in the modulated emissivity induced by laser. Experimental results show how the use of these techniques represent a good tool for a quantitative measurement of the optothermal properties of vanadium dioxide based structures

  3. Price-based optimal control of electrical power systems

    OpenAIRE

    Jokic, A.

    2007-01-01

    During the past decade, electrical power systems have been going through some major restructuring processes. From monopolistic, highly regulated and one utility controlled operation, a system is being restructured to include many parties competing for energy production and consumption, and for provision of many of the ancillary services necessary for system operation. With the emergence of competitive markets as central operational mechanisms, the prime operational objective has shifted from ...

  4. Electric Water Heater Modeling and Control Strategies for Demand Response

    Energy Technology Data Exchange (ETDEWEB)

    Diao, Ruisheng; Lu, Shuai; Elizondo, Marcelo A.; Mayhorn, Ebony T.; Zhang, Yu; Samaan, Nader A.

    2012-07-22

    Abstract— Demand response (DR) has a great potential to provide balancing services at normal operating conditions and emergency support when a power system is subject to disturbances. Effective control strategies can significantly relieve the balancing burden of conventional generators and reduce investment on generation and transmission expansion. This paper is aimed at modeling electric water heaters (EWH) in households and tests their response to control strategies to implement DR. The open-loop response of EWH to a centralized signal is studied by adjusting temperature settings to provide regulation services; and two types of decentralized controllers are tested to provide frequency support following generator trips. EWH models are included in a simulation platform in DIgSILENT to perform electromechanical simulation, which contains 147 households in a distribution feeder. Simulation results show the dependence of EWH response on water heater usage . These results provide insight suggestions on the need of control strategies to achieve better performance for demand response implementation. Index Terms— Centralized control, decentralized control, demand response, electrical water heater, smart grid

  5. Nonlinear Cascade Strategy for Longitudinal Control of Electric Vehicle.

    Science.gov (United States)

    El Majdoub, K; Giri, F; Ouadi, H; Chaoui, F Z

    2014-01-01

    The problem of controlling the longitudinal motion of front-wheels electric vehicle (EV) is considered making the focus on the case where a single dc motor is used for both front wheels. Chassis dynamics are modelled applying relevant fundamental laws taking into account the aerodynamic effects and the road slope variation. The longitudinal slip, resulting from tire deformation, is captured through Kiencke's model. Despite its highly nonlinear nature the complete model proves to be utilizable in longitudinal control design. The control objective is to achieve a satisfactory vehicle speed regulation in acceleration/deceleration stages, despite wind speed and other parameters uncertainty. An adaptive controller is developed using the backstepping design technique. The obtained adaptive controller is shown to meet its objectives in presence of the changing aerodynamics efforts and road slope.

  6. PWM Inverter control and the application thereof within electric vehicles

    Science.gov (United States)

    Geppert, Steven

    1982-01-01

    An inverter (34) which provides power to an A.C. machine (28) is controlled by a circuit (36) employing PWM control strategy whereby A.C. power is supplied to the machine at a preselectable frequency and preselectable voltage. This is accomplished by the technique of waveform notching in which the shapes of the notches are varied to determine the average energy content of the overall waveform. Through this arrangement, the operational efficiency of the A.C. machine is optimized. The control circuit includes a micro-computer and memory element which receive various parametric inputs and calculate optimized machine control data signals therefrom. The control data is asynchronously loaded into the inverter through an intermediate buffer (38). In its preferred embodiment, the present invention is incorporated within an electric vehicle (10) employing a 144 VDC battery pack (32) and a three-phase induction motor (18).

  7. SEMICONDUCTOR DEVICES: Structural and electrical characteristics of lanthanum oxide gate dielectric film on GaAs pHEMT technology

    Science.gov (United States)

    Chia-Song, Wu; Hsing-Chung, Liu

    2009-11-01

    This paper investigates the feasibility of using a lanthanum oxide thin film (La2O3) with a high dielectric constant as a gate dielectric on GaAs pHEMTs to reduce gate leakage current and improve the gate to drain breakdown voltage relative to the conventional GaAs pHEMT. An E/D mode pHEMT in a single chip was realized by selecting the appropriate La2O3 thickness. The thin La2O3 film was characterized: its chemical composition and crystalline structure were determined by X-ray photoelectron spectroscopy and X-ray diffraction, respectively. La2O3 exhibited good thermal stability after post-deposition annealing at 200, 400 and 600 °C because of its high binding-energy (835.6 eV). Experimental results clearly demonstrated that the La2O3 thin film was thermally stable. The DC and RF characteristics of Pt/La2O3/Ti/Au gate and conventional Pt/Ti/Au gate pHEMTs were examined. The measurements indicated that the transistor with the Pt/La2O3/Ti/Au gate had a higher breakdown voltage and lower gate leakage current. Accordingly, the La2O3 thin film is a potential high-k material for use as a gate dielectric to improve electrical performance and the thermal effect in high-power applications.

  8. A Novel Method for Control Performance Assessment with Fractional Order Signal Processing and Its Application to Semiconductor Manufacturing

    Directory of Open Access Journals (Sweden)

    Kai Liu

    2018-06-01

    Full Text Available The significant task for control performance assessment (CPA is to review and evaluate the performance of the control system. The control system in the semiconductor industry exhibits a complex dynamic behavior, which is hard to analyze. This paper investigates the interesting crossover properties of Hurst exponent estimations and proposes a novel method for feature extraction of the nonlinear multi-input multi-output (MIMO systems. At first, coupled data from real industry are analyzed by multifractal detrended fluctuation analysis (MFDFA and the resultant multifractal spectrum is obtained. Secondly, the crossover points with spline fit in the scale-law curve are located and then employed to segment the entire scale-law curve into several different scaling regions, in which a single Hurst exponent can be estimated. Thirdly, to further ascertain the origin of the multifractality of control signals, the generalized Hurst exponents of the original series are compared with shuffled data. At last, non-Gaussian statistical properties, multifractal properties and Hurst exponents of the process control variables are derived and compared with different sets of tuning parameters. The results have shown that CPA of the MIMO system can be better employed with the help of fractional order signal processing (FOSP.

  9. Silver Nanoshell Plasmonically Controlled Emission of Semiconductor Quantum Dots in the Strong Coupling Regime.

    Science.gov (United States)

    Zhou, Ning; Yuan, Meng; Gao, Yuhan; Li, Dongsheng; Yang, Deren

    2016-04-26

    Strong coupling between semiconductor excitons and localized surface plasmons (LSPs) giving rise to hybridized plexciton states in which energy is coherently and reversibly exchanged between the components is vital, especially in the area of quantum information processing from fundamental and practical points of view. Here, in photoluminescence spectra, rather than from common extinction or reflection measurements, we report on the direct observation of Rabi splitting of approximately 160 meV as an indication of strong coupling between excited states of CdSe/ZnS quantum dots (QDs) and LSP modes of silver nanoshells under nonresonant nanosecond pulsed laser excitation at room temperature. The strong coupling manifests itself as an anticrossing-like behavior of the two newly formed polaritons when tuning the silver nanoshell plasmon energies across the exciton line of the QDs. Further analysis substantiates the essentiality of high pump energy and collective strong coupling of many QDs with the radiative dipole mode of the metallic nanoparticles for the realization of strong coupling. Our finding opens up interesting directions for the investigation of strong coupling between LSPs and excitons from the perspective of radiative recombination under easily accessible experimental conditions.

  10. Thermally controlled growth of surface nanostructures on ion-modified AIII-BV semiconductor crystals

    Science.gov (United States)

    Trynkiewicz, Elzbieta; Jany, Benedykt R.; Wrana, Dominik; Krok, Franciszek

    2018-01-01

    The primary motivation for our systematic study is to provide a comprehensive overview of the role of sample temperature on the pattern evolution of several AIII-BV semiconductor crystal (001) surfaces (i.e., InSb, InP, InAs, GaSb) in terms of their response to low-energy Ar+ ion irradiation conditions. The surface morphology and the chemical diversity of such ion-modified binary materials has been characterized by means of scanning electron microscopy (SEM). In general, all surface textures following ion irradiation exhibit transitional behavior from small islands, via vertically oriented 3D nanostructures, to smoothened surface when the sample temperature is increased. This result reinforces our conviction that the mass redistribution of adatoms along the surface plays a vital role during the formation and growth process of surface nanostructures. We would like to emphasize that this paper addresses in detail for the first time the topic of the growth kinetics of the nanostructures with regard to thermal surface diffusion, while simultaneously offering some possible approaches to supplementing previous studies and therein gaining a new insight into this complex issue. The experimental results are discussed with reference to models of the pillars growth, abutting on preferential sputtering, the self-sustained etch masking effect and the redeposition process recently proposed to elucidate the observed nanostructuring mechanism.

  11. Electric and hybrid vehicles environmental control subsystem study

    Science.gov (United States)

    1981-01-01

    An environmental control subsystem (ECS) in the passenger compartment of electric and hybrid vehicles is studied. Various methods of obtaining the desired temperature control for the battery pack is also studied. The functional requirements of ECS equipment is defined. Following categorization by methodology, technology availability and risk, all viable ECS concepts are evaluated. Each is assessed independently for benefits versus risk, as well as for its feasibility to short, intermediate and long term product development. Selection of the preferred concept is made against these requirements, as well as the study's major goal of providing safe, highly efficient and thermally confortable ECS equipment.

  12. Study of nickel doping effects on structural, electrical and optical properties of sprayed ZnO semiconductor layers

    Energy Technology Data Exchange (ETDEWEB)

    Mhamdi, A., E-mail: mmbb11112000@yahoo.fr; Ouni, B.; Amlouk, A.; Boubaker, K.; Amlouk, M.

    2014-01-05

    Highlights: • Proposing a complete original explanation to a simple and cheap technique. • Presenting an original combination of several referred characterization means. • Original analysis in terms of frequency–temperature dependence of AC conductivity. • A deep analysis within the correlated barrier hopping (CBH) model. • Outlining new conjoint correlation between Ni content and ZnO compound. -- Abstract: In the present study, zinc oxide doped nickel thin films (ZnO:Ni) at different percentage (1–3%) were deposited on glass substrates using a chemical spray technique. The effect of Ni concentration on the structural, electrical and optical properties of the ZnO:Ni thin films were investigated. The X-ray diffraction analysis shows that the films were well crystallized in würtzite phase with the crystallites preferentially oriented towards (0 0 2) direction parallel c-axis. On the other hand, the optical transmittance measurement was found to be higher than 80% and the optical band gap varies between 3.19 and 3.25 eV. The activation energy values calculated from DC conductivity and angular frequency relaxation are almost identical, indicating that the conduction mechanism is thermally activated by hopping between localized states. Moreover, the analysis of the frequency and temperature dependence of AC conductivity supports the correlated barrier hopping (CBH) model. Further, the value of the maximum height W{sub m} barrier was estimated using the Elliott model, which suggests that the charge carrier jumps over a potential barrier between the defect states. Finally, all results have been discussed in terms of the nickel doping concentration.

  13. Controlled growth of high-density CdS and CdSe nanorod arrays on selective facets of two-dimensional semiconductor nanoplates

    KAUST Repository

    Wu, Xue-Jun; Chen, Junze; Tan, Chaoliang; Zhu, Yihan; Han, Yu; Zhang, Hua

    2016-01-01

    . Here, we report a seeded growth approach for the controlled epitaxial growth of three types of hierarchical one-dimensional (1D)/two-dimensional (2D) nanostructures, where nanorod arrays of II-VI semiconductor CdS or CdSe are grown on the selective

  14. The model of self-compensation and pinning of the Fermi level in irradiated semiconductors

    International Nuclear Information System (INIS)

    Brudnyi, V. N.; Kolin, N. G.; Smirnov, L. S.

    2007-01-01

    A model is developed to analyze numerically the electrical properties and the steady-state (limiting) position of the Fermi level (F lim ) in tetrahedral semiconductors irradiated with high-energy particles. It is shown that an irradiated semiconductor represents a highly compensated material, in which F lim is identical to G >/2, where G > is the average energy gap between the conduction band and valence band within the entire Brillouin zone of the crystal. The experimental values of F lim , the calculated values of G >/2, and the data on the electrical properties of irradiated semiconductors are presented. The chemical trends controlling the variation in the quantity F lim in groups of semiconductors with the similar types of chemical bonding are analyzed

  15. Electromyographic control of functional electrical stimulation in selected patients.

    Science.gov (United States)

    Graupe, D; Kohn, K H; Basseas, S; Naccarato, E

    1984-07-01

    The paper describes initial results of above-lesion electromyographic (EMG) controlled functional electrical stimulation (FES) of paraplegics. Such controlled stimulation is to provide upper-motor-neuron paraplegics (T5 to T12) with self-controlled standing and some walking without braces and with only the help of walkers or crutches. The above-lesion EMG signal employed serves to map the posture of the patient's upper trunk via a computerized mapping of the temporal patterns of that EMG. Such control also has an inherent safety feature in that it prevents the patient from performing a lower-limb movement via FES unless his trunk posture is adequate. Copyright 2013, SLACK Incorporated.

  16. Traction control of an electric vehicle based on nonlinear observers

    Directory of Open Access Journals (Sweden)

    Diego A. Aligia

    2017-12-01

    Full Text Available A traction control strategy for a four-wheel electric vehicle is proposed in this paper. The strategy is based on nonlinear observers which allows estimating the maximum force that can be transmitted to the road. Knowledge of the maximum force allows controlling the slip of the driving wheels, preventing the wheel’s slippage in low-grip surfaces. The proposed strategy also allows to avoid the undesired yaw moment in the vehicle which occurs when road conditions on either side of it are dierent. This improves the eciency and the control of the vehicle, avoiding possible losses of stability that can result in risks for its occupants. Both the proposed observer and the control strategy are designed based on a dynamic rotational model of the wheel and a brush force model. Simulation results are obtained based on a complete vehicle model on the Simulink/CarSim platform.

  17. Equivalent electricity storage capacity of domestic thermostatically controlled loads

    International Nuclear Information System (INIS)

    Sossan, Fabrizio

    2017-01-01

    A method to quantify the equivalent storage capacity inherent the operation of thermostatically controlled loads (TCLs) is developed. Equivalent storage capacity is defined as the amount of power and electricity consumption which can be deferred or anticipated in time with respect to the baseline consumption (i.e. when no demand side event occurs) without violating temperature limits. The analysis is carried out for 4 common domestic TCLs: an electric space heating system, freezer, fridge, and electric water heater. They are simulated by applying grey-box thermal models identified from measurements. They describe the heat transfer of the considered TCLs as a function of the electric power consumption and environment conditions. To represent typical TCLs operating conditions, Monte Carlo simulations are developed, where models inputs and parameters are sampled from relevant statistical distributions. The analysis provides a way to compare flexible demand against competitive storage technologies. It is intended as a tool for system planners to assess the TCLs potential to support electrical grid operation. In the paper, a comparison of the storage capacity per unit of capital investment cost is performed considering the selected TCLs and two grid-connected battery storage systems (a 720 kVA/500 kWh lithium-ion unit and 15 kVA/120 kWh Vanadium flow redox) is performed. - Highlights: • The equivalent storage capacity of domestic TCLs is quantified • A comparison with battery-based storage technologies is performed • We derive metrics for system planners to plan storage in power system networks • Rule-of-thumb cost indicators for flexible demand and battery-based storage

  18. Control system and method for a hybrid electric vehicle

    Science.gov (United States)

    Phillips, Anthony Mark; Blankenship, John Richard; Bailey, Kathleen Ellen; Jankovic, Miroslava

    2001-01-01

    A vehicle system controller (20) is presented for a LSR parallel hybrid electric vehicle having an engine (10), a motor (12), wheels (14), a transmission (16) and a battery (18). The vehicle system controller (20) has a state machine having a plurality of predefined states (22-32) that represent operating modes for the vehicle. A set of rules is defined for controlling the transition between any two states in the state machine. The states (22-32) are prioritized according to driver demands, energy management concerns and system fault occurrences. The vehicle system controller (20) controls the transitions from a lower priority state to a higher priority state based on the set of rules. In addition, the vehicle system controller (20) will control a transition to a lower state from a higher state when the conditions no longer warrant staying in the current state. A unique set of output commands is defined for each state for the purpose of controlling lower level subsystem controllers. These commands serve to achieve the desire vehicle functionality within each state and insure smooth transitions between states.

  19. On load flow control in electric power systems

    Energy Technology Data Exchange (ETDEWEB)

    Herbig, Arnim

    2000-01-01

    This dissertation deals with the control of active power flow, or load flow in electric power systems. During the last few years, interest in the possibilities to control the active power flows in transmission systems has increased significantly. There is a number of reasons for this, coming both from the application side - that is, from power system operations - and from the technological side. where advances in power electronics and related technologies have made new system components available. Load flow control is by nature a multi-input multi-output problem, since any change of load flow in one line will be complemented by changes in other lines. Strong cross-coupling between controllable components is to be expected, and the possibility of adverse interactions between these components cannot be rejected straightaway. Interactions with dynamic phenomena in the power system are also a source of concern. Three controllable components are investigated in this thesis, namely the controlled series capacitor (CSC), the phase angle regulator (PAR), and the unified power flow controller (UPFC). Properties and characteristics of these devices axe investigated and discussed. A simple control strategy is proposed. This strategy is then analyzed extensively. Mathematical methods and physical knowledge about the pertinent phenomena are combined, and it is shown that this control strategy can be used for a fairly general class of devices. Computer simulations of the controlled system provide insight into the system behavior in a system of reasonable size. The robustness and stability of the control system are discussed as are its limits. Further, the behavior of the control strategy in a system where the modeling allows for dynamic phenomena are investigated with computer simulations. It is discussed under which circumstances the control action has beneficial or detrimental effect on the system dynamics. Finally, a graphical approach for analyzing the effect of controllers

  20. Modernization Of Electrical Installation By Using Wireless Remote Control

    Directory of Open Access Journals (Sweden)

    Mawlood M Al – Hamad

    2013-05-01

    Full Text Available Great benefits can be achieved by using wireless remote control in electrical wiring systems of buildings.     Probably the main advantage of this application is the drastic saving in wiring installations, which in turn will give higher reliability, safety and economy.     The idea of this application can be summarized in the following explanation. '' Instead off connecting each point of electrical system to individual switch by wires, a remote receiver can be situated in a place near to the point. The transmitter is used to operate the point remotely. The mains are connected to the receiver which will connect or disconnect the load as required. Many points can be connected to one receiver and can be operated by one or more transmitter.

  1. Multistate nonvolatile straintronics controlled by a lateral electric field

    International Nuclear Information System (INIS)

    Iurchuk, V; Doudin, B; Kundys, B

    2014-01-01

    We present a multifunctional and multistate permanent memory device based on lateral electric field control of a strained surface. Sub-coercive electrical writing of a remnant strain of a PZT substrate imprints stable and rewritable resistance changes on a CoFe overlayer. A proof-of-principle device, with the simplest resistance strain gage design, is shown as a memory cell exhibiting 17-memory states of high reproducibility and reliability for nonvolatile operations. Magnetoresistance of the film also depends on the cell state, and indicates a rewritable change of magnetic properties persisting in the remnant strain of the substrate. This makes it possible to combine strain, magnetic and resistive functionalities in a single memory element, and suggests that sub-coercive stress studies are of interest for straintronics applications. (fast track communication)

  2. Multistate nonvolatile straintronics controlled by a lateral electric field.

    Science.gov (United States)

    Iurchuk, V; Doudin, B; Kundys, B

    2014-07-23

    We present a multifunctional and multistate permanent memory device based on lateral electric field control of a strained surface. Sub-coercive electrical writing of a remnant strain of a PZT substrate imprints stable and rewritable resistance changes on a CoFe overlayer. A proof-of-principle device, with the simplest resistance strain gage design, is shown as a memory cell exhibiting 17-memory states of high reproducibility and reliability for nonvolatile operations. Magnetoresistance of the film also depends on the cell state, and indicates a rewritable change of magnetic properties persisting in the remnant strain of the substrate. This makes it possible to combine strain, magnetic and resistive functionalities in a single memory element, and suggests that sub-coercive stress studies are of interest for straintronics applications.

  3. Dynamically tuned magnetostrictive spring with electrically controlled stiffness

    Science.gov (United States)

    Scheidler, Justin J.; Asnani, Vivake M.; Dapino, Marcelo J.

    2016-03-01

    This paper presents the design and testing of an electrically controllable magnetostrictive spring that has a dynamically tunable stiffness (i.e., a magnetostrictive Varispring). The device enables in situ stiffness tuning or stiffness switching for vibration control applications. Using a nonlinear electromechanical transducer model and an analytical solution of linear, mechanically induced magnetic diffusion, Terfenol-D is shown to have a faster rise time to stepped voltage inputs and a significantly higher magnetic diffusion cut-off frequency relative to Galfenol. A Varispring is manufactured using a laminated Terfenol-D rod. Further rise time reductions are achieved by minimizing the rod’s diameter and winding the electromagnet with larger wire. Dynamic tuning of the Varispring’s stiffness is investigated by measuring the Terfenol-D rod’s strain response to dynamic, compressive, axial forces in the presence of sinusoidal or square wave control currents. The Varispring’s rise time is \\lt 1 ms for 1 A current switches. Continuous modulus changes up to 21.9 GPa and 500 Hz and square wave modulus changes (dynamic {{Δ }}E effect) up to 12.3 GPa and 100 Hz are observed. Stiffness tunability and tuning bandwidth can be considerably increased by operating about a more optimal bias stress and improving the control of the electrical input.

  4. Combined Optimal Control System for excavator electric drive

    Science.gov (United States)

    Kurochkin, N. S.; Kochetkov, V. P.; Platonova, E. V.; Glushkin, E. Y.; Dulesov, A. S.

    2018-03-01

    The article presents a synthesis of the combined optimal control algorithms of the AC drive rotation mechanism of the excavator. Synthesis of algorithms consists in the regulation of external coordinates - based on the theory of optimal systems and correction of the internal coordinates electric drive using the method "technical optimum". The research shows the advantage of optimal combined control systems for the electric rotary drive over classical systems of subordinate regulation. The paper presents a method for selecting the optimality criterion of coefficients to find the intersection of the range of permissible values of the coordinates of the control object. There is possibility of system settings by choosing the optimality criterion coefficients, which allows one to select the required characteristics of the drive: the dynamic moment (M) and the time of the transient process (tpp). Due to the use of combined optimal control systems, it was possible to significantly reduce the maximum value of the dynamic moment (M) and at the same time - reduce the transient time (tpp).

  5. Semiconductor lasers stability, instability and chaos

    CERN Document Server

    Ohtsubo, Junji

    2017-01-01

    This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

  6. Facing a Problem of Electrical Energy Quality in Ship Networks-measurements, Estimation, Control

    Institute of Scientific and Technical Information of China (English)

    Tomasz Tarasiuk; Janusz Mindykowski; Xiaoyan Xu

    2003-01-01

    In this paper, electrical energy quality and its indices in ship electric networks are introduced, especially the meaning of electrical energy quality terms in voltage and active and reactive power distribution indices. Then methods of measurement of marine electrical energy indices are introduced in details and a microprocessor measurement-diagnosis system with the function of measurement and control is designed. Afterwards, estimation and control of electrical power quality of marine electrical power networks are introduced. And finally, according to the existing method of measurement and control of electrical power quality in ship power networks, the improvement of relative method is proposed.

  7. Electrical control of calcium oscillations in mesenchymal stem cells using microsecond pulsed electric fields.

    Science.gov (United States)

    Hanna, Hanna; Andre, Franck M; Mir, Lluis M

    2017-04-20

    Human mesenchymal stem cells are promising tools for regenerative medicine due to their ability to differentiate into many cellular types such as osteocytes, chondrocytes and adipocytes amongst many other cell types. These cells present spontaneous calcium oscillations implicating calcium channels and pumps of the plasma membrane and the endoplasmic reticulum. These oscillations regulate many basic functions in the cell such as proliferation and differentiation. Therefore, the possibility to mimic or regulate these oscillations might be useful to regulate mesenchymal stem cells biological functions. One or several electric pulses of 100 μs were used to induce Ca 2+ spikes caused by the penetration of Ca 2+ from the extracellular medium, through the transiently electropermeabilized plasma membrane, in human adipose mesenchymal stem cells from several donors. Attached cells were preloaded with Fluo-4 AM and exposed to the electric pulse(s) under the fluorescence microscope. Viability was also checked. According to the pulse(s) electric field amplitude, it is possible to generate a supplementary calcium spike with properties close to those of calcium spontaneous oscillations, or, on the contrary, to inhibit the spontaneous calcium oscillations for a very long time compared to the pulse duration. Through that inhibition of the oscillations, Ca 2+ oscillations of desired amplitude and frequency could then be imposed on the cells using subsequent electric pulses. None of the pulses used here, even those with the highest amplitude, caused a loss of cell viability. An easy way to control Ca 2+ oscillations in mesenchymal stem cells, through their cancellation or the addition of supplementary Ca 2+ spikes, is reported here. Indeed, the direct link between the microsecond electric pulse(s) delivery and the occurrence/cancellation of cytosolic Ca 2+ spikes allowed us to mimic and regulate the Ca 2+ oscillations in these cells. Since microsecond electric pulse delivery

  8. Comparative analysis of oxide phase formation and its effects on electrical properties of SiO{sub 2}/InSb metal-oxide-semiconductor structures

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jaeyel [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Park, Sehun [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); WCU Hybrid Materials Program, Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Kim, Jungsub; Yang, Changjae; Kim, Sujin; Seok, Chulkyun [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Park, Jinsub [Department of Electronic Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Yoon, Euijoon, E-mail: eyoon@snu.ac.kr [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); WCU Hybrid Materials Program, Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Department of Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Suwon 443-270 (Korea, Republic of); Energy Semiconductor Research Center, Advanced Institutes of Convergence Technology, Seoul National University, Suwon 443-270 (Korea, Republic of)

    2012-06-01

    We report on the changes in the interfacial phases between SiO{sub 2} and InSb caused by various deposition temperatures and heat treatments. X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy were used to evaluate the relative amount of each phase present at the interface. The effect of interfacial phases on the electrical properties of SiO{sub 2}/InSb metal-oxide-semiconductor (MOS) structures was investigated by capacitance-voltage (C-V) measurements. The amount of both In and Sb oxides increased with the deposition temperature. The amount of interfacial In oxide was larger for all samples, regardless of the deposition and annealing temperatures and times. In particular, the annealed samples contained less than half the amount of Sb oxide compared with the as-deposited samples, indicating a strong interfacial reaction between Sb oxide and the InSb substrate during annealing. The interface trap density sharply increased for deposition temperatures above 240 Degree-Sign C. The C-V measurements and Raman spectroscopy indicated that elemental Sb accumulation due to the interfacial reaction of Sb oxide with InSb substrate was responsible for the increased interfacial trap densities in these SiO{sub 2}/InSb MOS structures. - Highlights: Black-Right-Pointing-Pointer We report the quantitative analysis of interfacial oxides at the SiO{sub 2}/InSb interface. Black-Right-Pointing-Pointer Interfacial oxides were measured quantitatively by X-ray Photoelectron Spectroscopy. Black-Right-Pointing-Pointer As-grown and annealed samples showed different compositions of oxide phases. Black-Right-Pointing-Pointer Considerable reduction of antimony oxide phases was observed during annealing. Black-Right-Pointing-Pointer Interface trap densities at the SiO{sub 2}/InSb interface were calculated.

  9. Effect of annealing temperature on the electrical properties of Au/Ta{sub 2}O{sub 5}/n-GaN metal-insulator-semiconductor (MIS) structure

    Energy Technology Data Exchange (ETDEWEB)

    Prasanna Lakshmi, B.; Rajagopal Reddy, V.; Janardhanam, V. [Sri Venkateswara University, Department of Physics, Tirupati (India); Siva Pratap Reddy, M.; Lee, Jung-Hee [Kyungpook National University, School of Electrical Engineering and Computer Science, Daegu (Korea, Republic of)

    2013-11-15

    We report on the effect of an annealing temperature on the electrical properties of Au/Ta{sub 2}O{sub 5}/n-GaN metal-insulator-semiconductor (MIS) structure by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The measured Schottky barrier height ({Phi} {sub bo}) and ideality factor n values of the as-deposited Au/Ta{sub 2}O{sub 5}/n-GaN MIS structure are 0.93 eV (I-V) and 1.19. The barrier height (BH) increases to 1.03 eV and ideality factor decreases to 1.13 upon annealing at 500 {sup circle} C for 1 min under nitrogen ambient. When the contact is annealed at 600 {sup circle} C, the barrier height decreases and the ideality factor increases to 0.99 eV and 1.15. The barrier heights obtained from the C-V measurements are higher than those obtained from I-V measurements, and this indicates the existence of spatial inhomogeneity at the interface. Cheung's functions are also used to calculate the barrier height ({Phi} {sub bo}), ideality factor (n), and series resistance (R{sub s}) of the Au/Ta{sub 2}O{sub 5}/n-GaN MIS structure. Investigations reveal that the Schottky emission is the dominant mechanism and the Poole-Frenkel emission occurs only in the high voltage region. The energy distribution of interface states is determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. It is observed that the density value of interface states for the annealed samples with interfacial layer is lower than that of the density value of interface states of the as-deposited sample. (orig.)

  10. Design of a Tele-Control Electrical Vehicle System Using a Fuzzy Logic Control

    Directory of Open Access Journals (Sweden)

    M. Boukhnifer

    2012-11-01

    Full Text Available This paper presents a fuzzy logic design of a tele-control electrical vehicle system. We showed that the application of fuzzy logic control allows the stability of tele-vehicle system in spite of communication delays between the operator and the vehicle. A robust bilateral controller design using fuzzy logic frameworks was proposed. This approach allows a convenient means to trade off robustness and stability for a pre-specified time-delay margin. Both the performance and robustness of the proposed method were demonstrated by simulation results for a constant time delay between the operator and the electrical vehicle system.

  11. Semiconductor processing with excimer lasers

    International Nuclear Information System (INIS)

    Young, R.T.; Narayan, J.; Christie, W.H.; van der Leeden, G.A.; Rothe, D.E.; Cheng, L.J.

    1983-01-01

    The advantages of pulsed excimer lasers for semiconductor processing are reviewed. Extensive comparisons of the quality of annealing of ion-implanted Si obtained with XeCl and ruby lasers have been made. The results indicate that irrespective of the large differences in the optical properties of Si at uv and visible wavelengths, the efficiency of usage of the incident energy for annealing is comparable for the two lasers. However, because of the excellent optical beam quality, the XeCl laser can provide superior control of the surface melting and the resulting junction depth. Furthermore, the concentrations of electrically active point defects in the XeCl laser annealed region are 2 to 3 orders of magnitude lower than that obtained from ruby or Nd:YAG lasers. All these results seem to suggest that XeCl lasers should be suitable for fabricating not only solar cells but also the more advanced device structures required for VLSI or VHSIC applications

  12. Electric and hybrid vehicle environmental control subsystem study

    Science.gov (United States)

    Heitner, K. L.

    1980-01-01

    An environmental control subsystem (ECS) in electric and hybrid vehicles is studied. A combination of a combustion heater and gasoline engine (Otto cycle) driven vapor compression air conditioner is selected. The combustion heater, the small gasoline engine, and the vapor compression air conditioner are commercially available. These technologies have good cost and performance characteristics. The cost for this ECS is relatively close to the cost of current ECS's. Its effect on the vehicle's propulsion battery is minimal and the ECS size and weight do not have significant impact on the vehicle's range.

  13. The electric power engineering handbook power system stability and control

    CERN Document Server

    Grisby, Leonard L

    2012-01-01

    With contributions from worldwide leaders in the field, Power System Stability and Control, Third Edition (part of the five-volume set, The Electric Power Engineering Handbook) updates coverage of recent developments and rapid technological growth in essential aspects of power systems. Edited by L.L. Grigsby, a respected and accomplished authority in power engineering, and section editors Miroslav Begovic, Prabha Kundur, and Bruce Wollenberg, this reference presents substantially new and revised content. Topics covered include: * Power System Protection * Power System Dynamics and Stability *

  14. A universal calculation model for the controlled electric transmission line

    International Nuclear Information System (INIS)

    Zivzivadze, O.; Zivzivadze, L.

    2009-01-01

    Difficulties associated with the development of calculation models are analyzed, and the ways of resolution of these problems are given. A version of the equivalent circuit as a six-pole network, the parameters of which do not depend on the angle of shift Θ between the voltage vectors of circuits is offered. The interrelation between the parameters of the equivalent circuit and the transmission constants of the line was determined. A universal calculation model for the controlled electric transmission line was elaborated. The model allows calculating the stationary modes of lines of such classes at any angle of shift Θ between the circuits. (author)

  15. Control of Surface Attack by Gallium Alloys in Electrical Contacts.

    Science.gov (United States)

    1986-03-28

    and atmospheric control but does not allow visual observation of the contact brushes. This machine is a small homopolar motor built from mild steel...collectors,gallium, homopolar devices,liquid metals,~- is. ABSTRACT ICNI.. .. w 41N"w -~dv.mp.d Wrllt by Itabata" * Electrical contact between a copp’er...32 5 Test rig with felt metal brushes 32 6 Homopolar test apparatus 33 7 Rewetting of alloy track 33 8 Alloy track after running with finger 34 brushes

  16. Introduction to Feedforward Control of Electric Drives - Rules and Limits

    Directory of Open Access Journals (Sweden)

    Michal Malek

    2010-01-01

    Full Text Available Electric servodrives are characterized by precise tracking and its derivations. The way to meet this goal cost them a number of obstacles, whether variations associated with end-stage of astatism, changes in the positioning system parameters or to changes in load torque than the failing values. Problems arise in situations where the link between the servomotor and the load is not driven by "perfect" solid coupling. And the basic rules of control system affected by this phenomenon are given in this article.

  17. 49 CFR 236.207 - Electric lock on hand-operated switch; control.

    Science.gov (United States)

    2010-10-01

    ..., AND APPLIANCES Automatic Block Signal Systems Standards § 236.207 Electric lock on hand-operated switch; control. Electric lock on hand-operated switch shall be controlled so that it cannot be unlocked... 49 Transportation 4 2010-10-01 2010-10-01 false Electric lock on hand-operated switch; control...

  18. Oxide semiconductors

    CERN Document Server

    Svensson, Bengt G; Jagadish, Chennupati

    2013-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  19. Electrically driven hybrid photonic metamaterials for multifunctional control

    Science.gov (United States)

    Kang, Lei; Liu, Liu; Campbell, Sawyer D.; Yue, Taiwei; Ren, Qiang; Mayer, Theresa S.; Werner, Douglas H.

    2017-08-01

    The unique light-matter interaction in metamaterials, a type of artificial medium in which the geometrical features of subunits dominate their optical responses, have been utilized to achieve exotic material properties that are rare or nonexistent in natural materials. Furthermore, to extend their behaviors, active materials have been introduced into metamaterial systems to advance tunability, switchability and nonlinearity. Nevertheless, practical examples of versatile photonic metamaterials remain exceedingly rare for two main reasons. On the one hand, in sharp contrast to the broad material options available at lower frequencies, it is less common to find active media in the optical regime that can provide pronounced dielectric property changes under external stimuli, such as electric and magnetic fields. Vanadium dioxide (VO2), offering a large refractive index variation over a broad frequency range due to its near room temperature insulator-to-metal transition (IMT), has been favored in recent studies on tunable metamaterials. On the other hand, it turns out that regulating responses of hybrid metamaterials to external forces in an integrated manner is not a straightforward task. Recently, metamaterial-enabled devices (i.e., metadevices) with `self-sufficient' or `self-contained' electrical and optical properties have enabled complex functionalities. Here, we present a design methodology along with the associated experimental validation of a VO2 thin film integrated optical metamaterial absorber as a hybrid photonic platform for electrically driven multifunctional control, including reflectance switching, a rewritable memory process and manageable localized camouflage. The nanoengineered topologically continuous metal structure simultaneously supports the optical resonance and electrical functionality that actuates the phase transition in VO2 through the process of Joule heating. This work provides a universal approach to creating self-sufficient and highly

  20. Adsorption-controlled growth of BiFeO3 by MBE and integration with wide band gap semiconductors.

    Science.gov (United States)

    Ihlefeld, Jon F; Tian, Wei; Liu, Zi-Kui; Doolittle, W Alan; Bernhagen, Margitta; Reiche, Peter; Uecker, Reinhard; Ramesh, Ramamoorthy; Schlom, Darrell G

    2009-08-01

    BiFeO3 thin films have been deposited on (001) SrTiO3, (101) DyScO3, (011) DyScO3, (0001) AlGaN/GaN, and (0001) 6H-SiC single crystal substrates by reactive molecular beam epitaxy in an adsorption-controlled growth regime. This is achieved by supplying a bismuth over-pressure and utilizing the differential vapor pressures between bismuth oxides and BiFeO3 to control stoichiometry in accordance with thermodynamic calculations. Four-circle x-ray diffraction and transmission electron microscopy reveal phase-pure, epitaxial films with rocking curve full width at half maximum values as narrow as 7.2 arc seconds (0.002 degrees). Epitaxial growth of (0001)-oriented BiFeO3 thin films on (0001) GaN, including AlGaN HEMT structures, and (0001) SiC has been realized using intervening epitaxial (111) SrTiO3 / (100) TiO2 buffer layers. The epitaxial BiFeO3 thin films have 2 in-plane orientations: [1120] BiFeO3 || [1120] GaN (SiC) plus a twin variant related by a 180 degrees in-plane rotation. This epitaxial integration of the ferroelectric with the highest known polarization, BiFeO3, with high bandgap semiconductors is an important step toward novel field-effect devices.

  1. Two-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts: p-type Schottky barrier and spin-injection control

    KAUST Repository

    Gan, Liyong; Cheng, Yingchun; Schwingenschlö gl, Udo; Zhang, Qingyun

    2013-01-01

    We study the ferromagnet/semiconductor contacts formed by transition metal dichalcogenide monolayers, focusing on semiconducting MoS2 and WS2 and ferromagnetic VS2. We investigate the degree of p-type doping and demonstrate tuning of the Schottky barrier height by vertical compressive pressure. An analytical model is presented for the barrier heights that accurately describes the numerical findings and is expected to be of general validity for all transition metal dichalcogenide metal/semiconductor contacts. Furthermore, magnetic proximity effects induce a 100% spin polarization at the Fermi level in the semiconductor where the spin splitting increases up to 0.70 eV for increasing pressure.

  2. Two-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts: p-type Schottky barrier and spin-injection control

    KAUST Repository

    Gan, Liyong

    2013-09-26

    We study the ferromagnet/semiconductor contacts formed by transition metal dichalcogenide monolayers, focusing on semiconducting MoS2 and WS2 and ferromagnetic VS2. We investigate the degree of p-type doping and demonstrate tuning of the Schottky barrier height by vertical compressive pressure. An analytical model is presented for the barrier heights that accurately describes the numerical findings and is expected to be of general validity for all transition metal dichalcogenide metal/semiconductor contacts. Furthermore, magnetic proximity effects induce a 100% spin polarization at the Fermi level in the semiconductor where the spin splitting increases up to 0.70 eV for increasing pressure.

  3. Electric Vehicle Longitudinal Stability Control Based on a New Multimachine Nonlinear Model Predictive Direct Torque Control

    Directory of Open Access Journals (Sweden)

    M’hamed Sekour

    2017-01-01

    Full Text Available In order to improve the driving performance and the stability of electric vehicles (EVs, a new multimachine robust control, which realizes the acceleration slip regulation (ASR and antilock braking system (ABS functions, based on nonlinear model predictive (NMP direct torque control (DTC, is proposed for four permanent magnet synchronous in-wheel motors. The in-wheel motor provides more possibilities of wheel control. One of its advantages is that it has low response time and almost instantaneous torque generation. Moreover, it can be independently controlled, enhancing the limits of vehicular control. For an EV equipped with four in-wheel electric motors, an advanced control may be envisaged. Taking advantage of the fast and accurate torque of in-wheel electric motors which is directly transmitted to the wheels, a new approach for longitudinal control realized by ASR and ABS is presented in this paper. In order to achieve a high-performance torque control for EVs, the NMP-DTC strategy is proposed. It uses the fuzzy logic control technique that determines online the accurate values of the weighting factors and generates the optimal switching states that optimize the EV drives’ decision. The simulation results built in Matlab/Simulink indicate that the EV can achieve high-performance vehicle longitudinal stability control.

  4. Robust Control of Aeronautical Electrical Generators for Energy Management Applications

    Directory of Open Access Journals (Sweden)

    Giacomo Canciello

    2017-01-01

    Full Text Available A new strategy for the control of aeronautical electrical generators via sliding manifold selection is proposed, with an associated innovative intelligent energy management strategy used for efficient power transfer between two sources providing energy to aeronautical loads, having different functionalities and priorities. Electric generators used for aeronautical application involve several machines, including a main generator and an exciter. Standard regulators (PI or PID-like are normally used for the rectification of the generator voltage to be used to supply a high-voltage DC bus. The regulation is obtained by acting on a DC/DC converter that imposes the field voltage of the exciter. In this paper, the field voltage is fed to the generator windings by using a second-order sliding mode controller, resulting into a stable, robust (against disturbances action and a fast convergence to the desired reference. By using this strategy, an energy management strategy is proposed that dynamically changes the voltage set point, in order to intelligently transfer power between two voltage busses. Detailed simulation results are provided in order to show the effectiveness of the proposed energy management strategy in different scenarios.

  5. ATLAS magnet common cryogenic, vacuum, electrical and control systems

    CERN Document Server

    Miele, P; Delruelle, N; Geich-Gimbel, C; Haug, F; Olesen, G; Pengo, R; Sbrissa, E; Tyrvainen, H; ten Kate, H H J

    2004-01-01

    The superconducting Magnet System for the ATLAS detector at the LHC at CERN comprises a Barrel Toroid, two End Cap Toroids and a Central Solenoid with overall dimensions of 20 m diameter by 26 m length and a stored energy of 1.6 GJ. Common proximity cryogenic and electrical systems for the toroids are implemented. The Cryogenic System provides the cooling power for the 3 toroid magnets considered as a single cold mass (600 tons) and for the CS. The 21 kA toroid and the 8 kA solenoid electrical circuits comprise both a switch-mode power supply, two circuit breakers, water cooled bus bars, He cooled current leads and the diode resistor ramp-down unit. The Vacuum System consists of a group of primary rotary pumps and sets of high vacuum diffusion pumps connected to each individual cryostat. The Magnet Safety System guarantees the magnet protection and human safety through slow and fast dump treatment. The Magnet Control System ensures control, regulation and monitoring of the operation of the magnets. The update...

  6. A Wii-controlled safety device for electric chainsaws

    Directory of Open Access Journals (Sweden)

    R. Gubiani

    2013-09-01

    Full Text Available Forestry continues to represent one of the most hazardous economic sectors of human activity, and historically, the operation of chainsaws has mainly been restricted to professional lumberjacks. In recent years, because of low cost, chainsaws have become popular among unprofessionals, e.g. for cutting firewood and trimming trees. Serious or lethal lesions due to the use of chainsaws or electric chainsaws are often observed by traumatologists or forensic pathologists. Such serious accidents often occur during occupational activities and are essentially due to kickback or uncorrected use of the tool, or when the operator falls down losing the control of the implement. A new device in order to stop a cutting chain was developed and adapted to an electric chainsaw. The device is based on a Wiimote controller (Nintendo™, including two accelerometers and two gyroscopes for detecting rotation and inclination. A Bluetooth wireless technology is used to transfer data to a portable computer. The data collected about linear and angular acceleration are filtered by an algorithm, based on the Euclid norm, capable to distinguishing between normal movements and dangerous chainsaw movements. The result show a good answer to device and when happen a dangerous situation an alarm signal is sent back to the implement in order to stop the cutting chain. The device show a correct behavior in tested dangerous situations and is envisaged to extend to combustion engine chainsaws, as well as to other portable equipment used in agriculture and forestry operations and for this objectives were patented.

  7. Iterative learning control for electrical stimulation and stroke rehabilitation

    CERN Document Server

    Freeman, Chris T; Burridge, Jane H; Hughes, Ann-Marie; Meadmore, Katie L

    2015-01-01

    Iterative learning control (ILC) has its origins in the control of processes that perform a task repetitively with a view to improving accuracy from trial to trial by using information from previous executions of the task. This brief shows how a classic application of this technique – trajectory following in robots – can be extended to neurological rehabilitation after stroke. Regaining upper limb movement is an important step in a return to independence after stroke, but the prognosis for such recovery has remained poor. Rehabilitation robotics provides the opportunity for repetitive task-oriented movement practice reflecting the importance of such intense practice demonstrated by conventional therapeutic research and motor learning theory. Until now this technique has not allowed feedback from one practice repetition to influence the next, also implicated as an important factor in therapy. The authors demonstrate how ILC can be used to adjust external functional electrical stimulation of patients’ mus...

  8. Agent Based Control of Electric Power Systems with Distributed Generation

    DEFF Research Database (Denmark)

    Saleem, Arshad

    and subsystems that are able to coordinate, communicate, cooperate, adapt to emerging situations and self organize in an intelligent way. At the same time, rapid development in information and and communication technologies (ICT) have brought new opportunities and elucidations. New Technologies and standards...... control strategies. The results have been discussed from case studies of multiagent based distributed control scenarios in electric power systems. The main contribution of this work is a proposal for system design methodology for application of intelligent agent technology in power systems....... Situation in Denmark is even more interesting, with a current 20% penetration of wind energy it is moving towards an ambitious goal of 50% penetration by the year 2050. Realization of these concepts requires that power systems should be of distributed nature { consisting of autonomous components...

  9. Electrical, control and information systems in the Enhanced CANDU 6

    International Nuclear Information System (INIS)

    De Grosbois, J.; Raiskums, G.; Soulard, M.

    2011-01-01

    This paper describes the electrical, control, and information system (EC and I) design feature improvements of the Enhanced CANDU 6 (EC6). These additional features are carefully integrated into the EC6 design platform, and are engineered with consideration of operational feedback, human factors, and leveraging the advantages of digital instrumentation and control (I and C) technology to create a coherent I and C architecture in support of safe and high performance operation. The design drivers for the selection of advanced features are also discussed. The EC6 nuclear power plant is a mid-sized Pressurized Heavy Water Reactor design, based on the highly successful CANDU 6 family of power plants, and upgraded to meet today's Canadian and international safety requirements and to satisfy Generation 3 design expectations. (author)

  10. Neutron and gamma irradiation effects on power semiconductor switches

    Science.gov (United States)

    Schwarze, G. E.; Frasca, A. J.

    1990-01-01

    The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

  11. Tuning polarity and improving charge transport in organic semiconductors

    Science.gov (United States)

    Oh, Joon Hak; Han, A.-Reum; Yu, Hojeong; Lee, Eun Kwang; Jang, Moon Jeong

    2013-09-01

    Although state-of-the-art ambipolar polymer semiconductors have been extensively reported in recent years, highperformance ambipolar polymers with tunable dominant polarity are still required to realize on-demand, target-specific, high-performance organic circuitry. Herein, dithienyl-diketopyrrolopyrrole (TDPP)-based polymer semiconductors with engineered side-chains have been synthesized, characterized and employed in ambipolar organic field-effect transistors, in order to achieve controllable and improved electrical properties. Thermally removable tert-butoxycarbonyl (t-BOC) groups and hybrid siloxane-solubilizing groups are introduced as the solubilizing groups, and they are found to enable the tunable dominant polarity and the enhanced ambipolar performance, respectively. Such outstanding performance based on our molecular design strategies makes these ambipolar polymer semiconductors highly promising for low-cost, large-area, and flexible electronics.

  12. Neutron and gamma irradiation effects on power semiconductor switches

    International Nuclear Information System (INIS)

    Schwarze, G.E.; Frasca, A.J.

    1990-01-01

    The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN bipolar junction transistors (BJTs), and metal-oxide-semiconductor field effect transistors (MOSFETs)

  13. METHODOLOGICAL NOTES: Integrating magnetism into semiconductor electronics

    Science.gov (United States)

    Zakharchenya, Boris P.; Korenev, Vladimir L.

    2005-06-01

    The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor—making the hybrid an electronic-write-in and electronic-read-out elementary storage unit.

  14. Semiconductor Detectors

    International Nuclear Information System (INIS)

    Cortina, E.

    2007-01-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  15. Electrical servo actuator bracket. [fuel control valves on jet engines

    Science.gov (United States)

    Sawyer, R. V. (Inventor)

    1981-01-01

    An electrical servo actuator is mounted on a support arm which is allowed to pivot on a bolt through a fixed mounting bracket. The actuator is pivotally connected to the end of the support arm by a bolt which has an extension allowed to pass through a slot in the fixed mounting bracket. An actuator rod extends from the servo actuator to a crank arm which turns a control shaft. A short linear thrust of the rod pivots the crank arm through about 90 for full-on control with the rod contracted into the servo actuator, and full-off control when the rod is extended from the actuator. A spring moves the servo actuator and actuator rod toward the control crank arm once the actuator rod is fully extended in the full-off position. This assures the turning of the control shaft to a full-off position. A stop bolt and slot are provided to limit pivot motion. Once fully extended, the spring pivots the motion.

  16. FACTS controllers and the deregulated electric utility environment

    International Nuclear Information System (INIS)

    Ooi, B. T.; Galiana, F. D.; McGillis, D.; Joos, G.; Marceau, R.

    1998-01-01

    The concept of Flexible AC Transmission Systems (FACTS) is explored and the potential of power electronic converters to increase flexibility and reliability of modern power systems is explored. Power electronic controllers can reduce the required safety margin in electric power generation capacity through the use of faster controllers based on exploiting the high-power solid-state switches with gate-turn-off capabilities. The FACTS concept makes it possible to postpone the financial investment needed to build more power lines, and also offers a solution to securing the right-of-way to build new lines. Currently available FACTS controllers such as the Static var Compensator (STATCOM) and the Unified Power Flow Controller (UPFC) are described, including their function, structure and relevant implementation issues. Since they can produce the required amount of reactive power independently of line voltage or current, and if equipped with energy storing devices they can supply real power as required, they are a necessary element for the control of power systems in a deregulated environment. 15 refs., 3 figs

  17. Theory of electrically controlled resonant tunneling spin devices

    Science.gov (United States)

    Ting, David Z. -Y.; Cartoixa, Xavier

    2004-01-01

    We report device concepts that exploit spin-orbit coupling for creating spin polarized current sources using nonmagnetic semiconductor resonant tunneling heterostructures, without external magnetic fields. The resonant interband tunneling psin filter exploits large valence band spin-orbit interaction to provide strong spin selectivity.

  18. Development of Tailorable Electrically Conductive Thermal Control Material Systems

    Science.gov (United States)

    Deshpande, M. S.; Harada, Y.

    1997-01-01

    The optical characteristics of surfaces on spacecraft are fundamental parameters in controlling its temperature. Passive thermal control coatings with designed solar absorptance and infrared emittance properties have been developed and have been in use for some time. In this total space environment, the coating must be stable and maintain its desired optical properties as well as mechanical properties for the course of the mission lifetime. The mission lifetimes are increasing and in our quest to save weight, newer substrates are being integrated which limit electrical grounding schemes. All of this has added to already existing concerns about spacecraft charging and related spacecraft failures or operational failures. The concern is even greater for thermal control surfaces that are very large. One way of alleviating such concerns is to design new thermal control material systems (TCMS) that can help to mitigate charging via providing charge leakage paths. The objective of this program was to develop two types of passive electrically conductive TCMS. The first was a highly absorbing/emitting black surface and the second was a low (alpha(sub s)/epsilon(sub N)) type white surface. The surface resistance goals for the black absorber was 10(exp 4) to 10(exp 9) Omega/square, and for the white surfaces it was 10(exp 6) to 10(exp 10) Omega/square. Several material system concepts were suggested and evaluated for space environment stability and electrical performance characterization. Our efforts in designing and evaluating these material systems have resulted in several developments. New concepts, pigments and binders have been developed to provide new engineering quality TCMS. Some of these have already found application on space hardware, some are waiting to be recognized by thermal designers, and some require further detailed studies to become state-of-the-art for future space hardware and space structures. Our studies on baseline state-of-the-art materials and

  19. Semiconductor physics an introduction

    CERN Document Server

    Seeger, Karlheinz

    1999-01-01

    Semiconductor Physics - An Introduction - is suitable for the senior undergraduate or new graduate student majoring in electrical engineering or physics. It will also be useful to solid-state scientists and device engineers involved in semiconductor design and technology. The text provides a lucid account of charge transport, energy transport and optical processes, and a detailed description of many devices. It includes sections on superlattices and quantum well structures, the effects of deep-level impurities on transport, the quantum Hall effect and the calculation of the influence of a magnetic field on the carrier distribution function. This 6th edition has been revised and corrected, and new sections have been added to different chapters.

  20. Controlled Growth of Ultrathin Film of Organic Semiconductors by Balancing the Competitive Processes in Dip-Coating for Organic Transistors.

    Science.gov (United States)

    Wu, Kunjie; Li, Hongwei; Li, Liqiang; Zhang, Suna; Chen, Xiaosong; Xu, Zeyang; Zhang, Xi; Hu, Wenping; Chi, Lifeng; Gao, Xike; Meng, Yancheng

    2016-06-28

    Ultrathin film with thickness below 15 nm of organic semiconductors provides excellent platform for some fundamental research and practical applications in the field of organic electronics. However, it is quite challenging to develop a general principle for the growth of uniform and continuous ultrathin film over large area. Dip-coating is a useful technique to prepare diverse structures of organic semiconductors, but the assembly of organic semiconductors in dip-coating is quite complicated, and there are no reports about the core rules for the growth of ultrathin film via dip-coating until now. In this work, we develop a general strategy for the growth of ultrathin film of organic semiconductor via dip-coating, which provides a relatively facile model to analyze the growth behavior. The balance between the three direct factors (nucleation rate, assembly rate, and recession rate) is the key to determine the growth of ultrathin film. Under the direction of this rule, ultrathin films of four organic semiconductors are obtained. The field-effect transistors constructed on the ultrathin film show good field-effect property. This work provides a general principle and systematic guideline to prepare ultrathin film of organic semiconductors via dip-coating, which would be highly meaningful for organic electronics as well as for the assembly of other materials via solution processes.

  1. Control of the radial electric field shear by modification of the magnetic field configuration in LHD

    International Nuclear Information System (INIS)

    Ida, K.; Yoshinuma, M.; Yokoyama, M.

    2005-01-01

    Control of the radial electric field, E γ , is considered to be important in helical plasmas, because the radial electric field and its shear are expected to reduce neoclassical and anomalous transport, respectively. In general, the radial electric field can be controlled by changing the collisionality, and positive or negative electric field have been obtained by decreasing or increasing the electron density, respectively. Although the sign of the radial electric field can be controlled by changing the collisionality, modification of the magnetic field is required to achieve further control of the radial electric field, especially producing a strong radial electric field shear. In the Large Helical Device (LHD) the radial electric field profiles are shown to be controlled by the modification of the magnetic field by 1) changing the radial profile of the helical ripples, ε h , 2) creating a magnetic island with an external perturbation field coil and 3) changing the local island divertor coil current. (author)

  2. Control of the radial electric field shear by modification of the magnetic field configuration in LHD

    International Nuclear Information System (INIS)

    Ida, K.; Yoshinuma, M.; Yokoyama, M.

    2005-01-01

    Control of the radial electric field, E r , is considered to be important in helical plasmas, because the radial electric field and its shear are expected to reduce neoclassical and anomalous transport, respectively. In general, the radial electric field can be controlled by changing the collisionality, and positive or negative electric fields have been obtained by decreasing or increasing the electron density, respectively. Although the sign of the radial electric field can be controlled by changing the collisionality, modification of the magnetic field is required to achieve further control of the radial electric field, especially to produce a strong radial electric field shear. In the Large Helical Device (LHD) the radial electric field profiles are shown to be controlled by the modification of the magnetic field by (1) changing the radial profile of the effective helical ripples, ε h (2) creating a magnetic island with an external perturbation field coil and (3) changing the local island divertor coil current

  3. Redox properties of small semiconductor particles

    International Nuclear Information System (INIS)

    Liver, N.; Nitzan, A.

    1992-01-01

    The size dependence of electrical and thermodynamic quantities of intermediate-sized semiconductor particles in an electrolyte solution with a given redox pair are studied. The equilibrium constant for this system is then derived based on the relationship of the electrolytic redox components to the size, charges, and concentration of the semiconductor particles. 25 refs., 9 figs., 1 tab

  4. neutron-Induced Failures in semiconductor Devices

    Energy Technology Data Exchange (ETDEWEB)

    Wender, Stephen Arthur [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2017-03-13

    Single Event Effects are a very significant failure mode in modern semiconductor devices that may limit their reliability. Accelerated testing is important for semiconductor industry. Considerable more work is needed in this field to mitigate the problem. Mitigation of this problem will probably come from Physicists and Electrical Engineers working together

  5. Semiconductor composition containing iron, dysprosium, and terbium

    Science.gov (United States)

    Pooser, Raphael C.; Lawrie, Benjamin J.; Baddorf, Arthur P.; Malasi, Abhinav; Taz, Humaira; Farah, Annettee E.; Kalyanaraman, Ramakrishnan; Duscher, Gerd Josef Mansfred; Patel, Maulik K.

    2017-09-26

    An amorphous semiconductor composition includes 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, 15 to 35 atomic percent terbium, balance X, wherein X is at least one of an oxidizing element and a reducing element. The composition has an essentially amorphous microstructure, an optical transmittance of at least 50% in at least the visible spectrum and semiconductor electrical properties.

  6. A PEMFC hybrid electric vehicle real time control system

    Science.gov (United States)

    Sun, Hongqiao

    In recent years, environmental friendly technologies and alternative energy solutions have drawn a lot of public attentions due to global energy crisis and pollution issues. Fuel cell (FC), a technology invented almost at the same time as the internal combustion (IC) engine, is now the focus of the automotive industry again. The fuel cell vehicle (FCV) has zero emission and its efficiency is significantly higher than the conventional IC engine power vehicles. Among a variety of FCV technologies, proton exchange membrane (PEM) FC vehicle appears to be far more attractive and mature. The prototype PEMFC vehicle has been developed and demonstrated to the public by nearly all the major automotive manufacturers in recent years. However, to the interest of the public research, publications and documentations on the PEMFC vehicle technology are rarely available due to its proprietary nature, which essentially makes it a secured technology. This dissertation demonstrates a real world application of a PEMFC hybrid electric vehicle. Through presenting the vehicle design concept, developing the real time control system and generating generic operation principles, this dissertation targets at establishing the public knowledge base on this new technology. A complete PEMFC hybrid electric vehicle design, including vehicle components layout, process flow diagram, real time control system architecture, subsystem structures and control algorithms, is presented in order to help understand the whole vehicle system. The design concept is validated through the vehicle demonstration. Generic operating principles are established along with the validation process, which helps populate this emerging technology. Thereafter, further improvements and future research directions are discussed.

  7. Real-Time Energy Management Control for Hybrid Electric Powertrains

    Directory of Open Access Journals (Sweden)

    Mohamed Zaher

    2013-01-01

    Full Text Available This paper focuses on embedded control of a hybrid powertrain concepts for mobile vehicle applications. Optimal robust control approach is used to develop a real-time energy management strategy. The main idea is to store the normally wasted mechanical regenerative energy in energy storage devices for later usage. The regenerative energy recovery opportunity exists in any condition where the speed of motion is in the opposite direction to the applied force or torque. This is the case when the vehicle is braking, decelerating, the motion is driven by gravitational force, or load driven. There are three main concepts for energy storing devices in hybrid vehicles: electric, hydraulic, and mechanical (flywheel. The real-time control challenge is to balance the system power demands from the engine and the hybrid storage device, without depleting the energy storage device or stalling the engine in any work cycle. In the worst-case scenario, only the engine is used and the hybrid system is completely disabled. A rule-based control algorithm is developed and is tuned for different work cycles and could be linked to a gain scheduling algorithm. A gain scheduling algorithm identifies the cycle being performed by the work machine and its position via GPS and maps both of them to the gains.

  8. Understanding Electrically Active Interface Formation on Wide Bandgap Semiconductors through Molecular Beam Epitaxy Using Fe3O 4 for Spintronics as a Base Case

    Science.gov (United States)

    Hamedani Golshan, Negar

    Nanoelectronics, complex heterostructures, and engineered 3D matrix materials are quickly advancing from research possibilities to manufacturing challenges for applications ranging from high-power devices to solar cells to any number of novel multifunctional sensors and controllers. Formation of an abrupt and effective interface is one of the basic requirements for integration of functional materials on different types of semiconductors (from silicon to the wide bandgaps) which can significantly impact the functionality of nanoscale electronic devices. To realize the potential of next-generation electronics, the understanding and control of those initial stages of film layer formation must be understood and translated to a process that can control the initial stages of film deposition. Thin film Fe3O4 has attracted much attention as a material for exploring the potential of spintronics in next-generation information technologies. Synthesis of highly spin-polarized material as spin sources, in combination with wide bandgap semiconductors which have a long spin relaxation time in addition to functionality in high-temperature, high-power, and high-frequency environments, would enhance the performance of today's spintronic devices. Spinel ferrite Fe3O4 has a high Curie temperature of 858 K and it is predicted to possess half-metallic properties, i.e. 100% spin polarization at the Fermi level, which can lead to ultrahigh tunneling magnetoresistance at room temperature. However, these properties have been very difficult to realize in thin film form, and device design strategies require high-quality thin films of Fe3O4. The most common reason reported in literature for the failure of the films to achieve theoretical performance is that the growth techniques used today produce films with antiphase boundaries (APB). These APBs have a strong antiferromagnetic coupling that negatively impact the magnetic and transport properties of epitaxial Fe 3O4 films. Therefore, greater

  9. Integrated powertrain control for hybrid electric vehicles with electric variable transmission

    NARCIS (Netherlands)

    Kessels, J.T.B.A.; Foster, D.L.; Bosch, van den P.P.J.

    2009-01-01

    The electric variable transmission (EVT) offers a powersplit for hybrid electric vehicles by integrating two motor/ generator sets into one electric machine. This double rotor concept implements a continuously variable transmission between the engine and the driveline, including the possibility for

  10. Magnetically diluted semi-conductor of SnO_2- Fe obtained by controlled precipitation

    International Nuclear Information System (INIS)

    Cajas, P.C.; Munoz, R.; Rodriguez-Paez, J.E.

    2014-01-01

    Solid solutions were synthesized SnO_2 doped with 5% and 8 mol% Fe by the controlled precipitation method. The particles size was obtained of ∼12 nm with heath treatment 450 °C. The presence of iron in the structure is evidenced by Raman spectroscopy The crystallite size we obtained with the results of XRD, and particle size by MET, it was concluded that the nanoparticles obtained were monocrystalline. The particles were characterized magnetically, for the powders doped to 8% Fe was determined ferromagnetic behavior at 5K, with a tendency superparamagnetic and paramagnetic at a temperature of 300K. (author)

  11. Semiconductor technology program. Progress briefs

    Science.gov (United States)

    Bullis, W. M.

    1980-01-01

    Measurement technology for semiconductor materials, process control, and devices is reviewed. Activities include: optical linewidth and thermal resistance measurements; device modeling; dopant density profiles; resonance ionization spectroscopy; and deep level measurements. Standardized oxide charge terminology is also described.

  12. Reactor power control method upon accidents of electrical power system

    International Nuclear Information System (INIS)

    Hirose, Masao.

    1983-01-01

    Purpose: To enable to continue the operation of a BWR type reactor by avoiding the scram while suppressing the reactor power, just after the external disturbance such as earth-trouble in power-transmission network. Method: Steep power drop of an electrical generator is to be detected not only by a current-type power-load-unbalance relay but also with a power-type power-load-unbalance-relay. If steep power-drop was detected by the latter relay, a previously selected control rod is rapidly inserted into the reactor. In this way, in the case where there is a possibility of the reactor scram, the scram can be avoided by suppressing the reactor power, thus the reactor operation can be continued. (Kamimura, M.)

  13. Electrically Controllable Spontaneous Magnetism in Nanoscale Mixed Phase Multiferroics

    Energy Technology Data Exchange (ETDEWEB)

    He, Q.; Chu, Y. H.; Heron, J. T.; Yang, S. Y.; Wang, C. H.; Kuo, C. Y.; Lin, H. J.; Yu, P.; Liang, C. W.; Zeches, R. J.; Chen, C. T.; Arenholz, E.; Scholl, A.; Ramesh, R.

    2010-08-02

    The emergence of enhanced spontaneous magnetic moments in self-assembled, epitaxial nanostructures of tetragonal (T-phase) and rhombohedral phases (R-phase) of the multiferroic BiFeO{sub 3} system is demonstrated. X-ray magnetic circular dichroism based photoemission electron microscopy (PEEM) was applied to investigate the local nature of this magnetism. We find that the spontaneous magnetization of the R-phase is significantly enhanced above the canted antiferromagnetic moment in the bulk phase, as a consequence of a piezomagnetic coupling to the adjacent T-phase and the epitaxial constraint. Reversible electric field control and manipulation of this magnetic moment at room temperature is shown using a combination of piezoresponse force microscopy and PEEM studies.

  14. Semiconductor sensors

    International Nuclear Information System (INIS)

    Hartmann, Frank

    2011-01-01

    Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

  15. Semiconductor Optics

    CERN Document Server

    Klingshirn, Claus F

    2012-01-01

    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  16. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1982-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

  17. Controlling An Electric Car Starter System Through Voice

    Directory of Open Access Journals (Sweden)

    A.B. Muhammad Firdaus

    2015-04-01

    Full Text Available Abstract These days automotive has turned into a stand out amongst the most well-known modes of transportation on the grounds that a large number of Malaysians could bear to have an auto. There are numerous decisions of innovations in auto that have in the market. One of the engineering is voice controlled framework. Voice Recognition is the procedure of consequently perceiving a certain statement talked by a specific speaker focused around individual data included in discourse waves. This paper is to make an car controlled by voice of human. An essential pre-processing venture in Voice Recognition systems is to recognize the vicinity of noise. Sensitivity to speech variability lacking recognition precision and helplessness to mimic are among the principle specialized obstacles that keep the far reaching selection of speech-based recognition systems. Voice recognition systems work sensibly well with a quiet conditions however inadequately under loud conditions or in twisted channels. The key focus of the project is to control an electric car starter system.

  18. Generation and control of polarization-entangled photons from GaAs island quantum dots by an electric field.

    Science.gov (United States)

    Ghali, Mohsen; Ohtani, Keita; Ohno, Yuzo; Ohno, Hideo

    2012-02-07

    Semiconductor quantum dots are potential sources for generating polarization-entangled photons efficiently. The main prerequisite for such generation based on biexciton-exciton cascaded emission is to control the exciton fine-structure splitting. Among various techniques investigated for this purpose, an electric field is a promising means to facilitate the integration into optoelectronic devices. Here we demonstrate the generation of polarization-entangled photons from single GaAs quantum dots by an electric field. In contrast to previous studies, which were limited to In(Ga)As quantum dots, GaAs island quantum dots formed by a thickness fluctuation were used because they exhibit a larger oscillator strength and emit light with a shorter wavelength. A forward voltage was applied to a Schottky diode to control the fine-structure splitting. We observed a decrease and suppression in the fine-structure splitting of the studied single quantum dot with the field, which enabled us to generate polarization-entangled photons with a high fidelity of 0.72 ± 0.05.

  19. Valleytronics in merging Dirac cones: All-electric-controlled valley filter, valve, and universal reversible logic gate

    Science.gov (United States)

    Ang, Yee Sin; Yang, Shengyuan A.; Zhang, C.; Ma, Zhongshui; Ang, L. K.

    2017-12-01

    Despite much anticipation of valleytronics as a candidate to replace the aging complementary metal-oxide-semiconductor (CMOS) based information processing, its progress is severely hindered by the lack of practical ways to manipulate valley polarization all electrically in an electrostatic setting. Here, we propose a class of all-electric-controlled valley filter, valve, and logic gate based on the valley-contrasting transport in a merging Dirac cones system. The central mechanism of these devices lies on the pseudospin-assisted quantum tunneling which effectively quenches the transport of one valley when its pseudospin configuration mismatches that of a gate-controlled scattering region. The valley polarization can be abruptly switched into different states and remains stable over semi-infinite gate-voltage windows. Colossal tunneling valley-pseudomagnetoresistance ratio of over 10 000 % can be achieved in a valley-valve setup. We further propose a valleytronic-based logic gate capable of covering all 16 types of two-input Boolean logics. Remarkably, the valley degree of freedom can be harnessed to resurrect logical reversibility in two-input universal Boolean gate. The (2 +1 ) polarization states (two distinct valleys plus a null polarization) reestablish one-to-one input-to-output mapping, a crucial requirement for logical reversibility, and significantly reduce the complexity of reversible circuits. Our results suggest that the synergy of valleytronics and digital logics may provide new paradigms for valleytronic-based information processing and reversible computing.

  20. 46 CFR 183.360 - Semiconductor rectifier systems.

    Science.gov (United States)

    2010-10-01

    ... 46 Shipping 7 2010-10-01 2010-10-01 false Semiconductor rectifier systems. 183.360 Section 183.360... TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents...

  1. DISTRIBUTED ELECTRICAL POWER PRODUCTION SYSTEM AND METHOD OF CONTROL THEREOF

    DEFF Research Database (Denmark)

    2010-01-01

    The present invention relates to a distributed electrical power production system wherein two or more electrical power units comprise respective sets of power supply attributes. Each set of power supply attributes is associated with a dynamic operating state of a particular electrical power unit....

  2. Real time spectroscopic ellipsometry for analysis and control of thin film polycrystalline semiconductor deposition in photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Koirala, Prakash; Attygalle, Dinesh; Aryal, Puruswottam; Pradhan, Puja; Chen, Jie [Center for Photovoltaics Innovation and Commercialization and Department of Physics and Astronomy, University of Toledo, Toledo, OH 43606 (United States); Marsillac, Sylvain [Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, VA 23529 (United States); Ferlauto, Andre S.; Podraza, Nikolas J.; Collins, Robert W. [Center for Photovoltaics Innovation and Commercialization and Department of Physics and Astronomy, University of Toledo, Toledo, OH 43606 (United States)

    2014-11-28

    Real time spectroscopic ellipsometry (RTSE) from the near-infrared to ultraviolet has been applied for analysis of the deposition of polycrystalline thin films that form the basis of two key photovoltaic heterojunction configurations, superstrate SnO{sub 2}/CdS/CdTe and substrate Mo/Cu(In{sub 1−x}Ga{sub x})Se{sub 2}/CdS. The focus of this work is to develop capabilities for monitoring and controlling the key steps in the fabrication of these device structures. Analysis of RTSE data collected during sputter deposition of CdS on a rough SnO{sub 2} transparent top contact provides the time evolution of the CdS effective thickness, or film volume per unit substrate area. This thickness includes interface, bulk, and surface roughness layer components and affects the CdS/CdTe heterojunction performance and the quantum efficiency of the solar cell in the blue region of the solar spectrum. Similarly, analysis of RTSE data collected during co-evaporation of Cu(In{sub 1−x}Ga{sub x})Se{sub 2} (CIGS; x ∼ 0.3) on a rough Mo back contact provides the evolution of a second phase of Cu{sub 2−x}Se within the CIGS layer. During the last stage of CIGS deposition, the In, Ga, and Se co-evaporants convert this Cu{sub 2−x}Se phase to CIGS, and RTSE identifies the endpoint, specifically the time at which complete conversion occurs and single-phase, large-grain CIGS is obtained in this key stage. - Highlights: • Real time spectroscopic ellipsometry (RTSE) study of CdS and CuIn{sub 1−x}Ga{sub x}Se{sub 2} (CIGS) films. • RTSE during CdS deposition provides the evolution of the CdS effective thickness. • RTSE for CIGS film enables to measure and control the composition and thickness. • The work leads to the development of optical models for processing steps.

  3. Toward designing semiconductor-semiconductor heterojunctions for photocatalytic applications

    Science.gov (United States)

    Zhang, Liping; Jaroniec, Mietek

    2018-02-01

    Semiconductor photocatalysts show a great potential for environmental and energy-related applications, however one of the major disadvantages is their relatively low photocatalytic performance due to the recombination of electron-hole pairs. Therefore, intensive research is being conducted toward design of heterojunctions, which have been shown to be effective for improving the charge-transfer properties and efficiency of photocatalysts. According to the type of band alignment and direction of internal electric field, heterojunctions are categorized into five different types, each of which is associated with its own charge transfer characteristics. Since the design of heterojunctions requires the knowledge of band edge positions of component semiconductors, the commonly used techniques for the assessment of band edge positions are reviewed. Among them the electronegativity-based calculation method is applied for a large number of popular visible-light-active semiconductors, including some widely investigated bismuth-containing semiconductors. On basis of the calculated band edge positions and the type of component semiconductors reported, heterojunctions composed of the selected bismuth-containing semiconductors are proposed. Finally, the most popular synthetic techniques for the fabrication of heterojunctions are briefly discussed.

  4. Optical Control of Intersubband Absorption in a Multiple Quantum Well-Embedded Semiconductor Microcravity

    Science.gov (United States)

    Liu, Ansheng; Ning, Cun-Zheng

    2000-01-01

    Optical intersubband response of a multiple quantum well (MQW)-embedded microcavity driven by a coherent pump field is studied theoretically. The n-type doped MQW structure with three subbands in the conduction band is sandwiched between a semi-infinite medium and a distributed Bragg reflector (DBR). A strong pump field couples the two upper subbands and a weak field probes the two lower subbands. To describe the optical response of the MQW-embedded microcavity, we adopt a semi-classical nonlocal response theory. Taking into account the pump-probe interaction, we derive the probe-induced current density associated with intersubband transitions from the single-particle density-matrix formalism. By incorporating the current density into the Maxwell equation, we solve the probe local field exactly by means of Green's function technique and the transfer-matrix method. We obtain an exact expression for the probe absorption coefficient of the microcavity. For a GaAs/Al(sub x)Ga(sub 1-x)As MQW structure sandwiched between a GaAs/AlAs DBR and vacuum, we performed numerical calculations of the probe absorption spectra for different parameters such as pump intensity, pump detuning, and cavity length. We find that the probe spectrum is strongly dependent on these parameters. In particular, we find that the combination of the cavity effect and the Autler-Townes effect results in a triplet in the optical spectrum of the MQW system. The optical absorption peak value and its location can be feasibly controlled by varying the pump intensity and detuning.

  5. Battery charging control methods, electric vehicle charging methods, battery charging apparatuses and rechargeable battery systems

    Science.gov (United States)

    Tuffner, Francis K [Richland, WA; Kintner-Meyer, Michael C. W. [Richland, WA; Hammerstrom, Donald J [West Richland, WA; Pratt, Richard M [Richland, WA

    2012-05-22

    Battery charging control methods, electric vehicle charging methods, battery charging apparatuses and rechargeable battery systems. According to one aspect, a battery charging control method includes accessing information regarding a presence of at least one of a surplus and a deficiency of electrical energy upon an electrical power distribution system at a plurality of different moments in time, and using the information, controlling an adjustment of an amount of the electrical energy provided from the electrical power distribution system to a rechargeable battery to charge the rechargeable battery.

  6. Advanced electric drives analysis, control, and modeling using MATLAB/Simulink

    CERN Document Server

    Mohan, Ned

    2014-01-01

    Advanced Electric Drives utilizes a physics-based approach to explain the fundamental concepts of modern electric drive control and its operation under dynamic conditions. Gives readers a "physical" picture of electric machines and drives without resorting to mathematical transformations for easy visualization Confirms the physics-based analysis of electric drives mathematically Provides readers with an analysis of electric machines in a way that can be easily interfaced to common power electronic converters and controlled using any control scheme Makes the MATLAB/Simulink files used in exampl

  7. A comprehensive overview of hybrid electric vehicle: Powertrain configurations, powertrain control techniques and electronic control units

    Energy Technology Data Exchange (ETDEWEB)

    Cagatay Bayindir, Kamil; Goezuekuecuek, Mehmet Ali; Teke, Ahmet [Cukurova University, Department of Electrical and Electronics Engineering, Balcali, Saricam, Adana (Turkey)

    2011-02-15

    The studies for hybrid electrical vehicle (HEV) have attracted considerable attention because of the necessity of developing alternative methods to generate energy for vehicles due to limited fuel based energy, global warming and exhaust emission limits in the last century. HEV incorporates internal composition engine, electric machines and power electronic equipments. In this study, overview of HEVs with a focus on hybrid configurations, energy management strategies and electronic control units are presented. Advantages and disadvantages of each configuration are clearly emphasized. The existing powertrain control techniques for HEVs are classified and comprehensively described. Electronic control units used in HEV configuration are also elaborated. The latest trends and technological challenges in the near future for HEVs are discussed. (author)

  8. Semiconductor ionizino. radiation detectors

    International Nuclear Information System (INIS)

    1982-01-01

    Spectrometric semiconductor detectors of ionizing radiation with the electron-hole junction, based on silicon and germanium are presented. The following parameters are given for the individual types of germanium detectors: energy range of detected radiation, energy resolution given as full width at half maximum (FWHM) and full width at one tenth of maximum (FWTM) for 57 Co and 60 Co, detection sensitivity, optimal voltage, and electric capacitance at optimal voltage. For silicon detectors the value of FWHM for 239 Pu is given, the sensitive area and the depth of the sensitive area. (E.S.)

  9. Actively Controlling the Topological Transition of Dispersion Based on Electrically Controllable Metamaterials

    Directory of Open Access Journals (Sweden)

    Zhiwei Guo

    2018-04-01

    Full Text Available Topological transition of the iso-frequency contour (IFC from a closed ellipsoid to an open hyperboloid provides unique capabilities for controlling the propagation of light. However, the ability to actively tune these effects remains elusive, and the related experimental observations are highly desirable. Here, a tunable electric IFC in a periodic structure composed of graphene/dielectric multilayers is investigated by tuning the chemical potential of the graphene layer. Specially, we present the actively controlled transportation in two kinds of anisotropic zero-index media containing perfect electric conductor/perfect magnetic conductor impurities. Finally, by adding variable capacitance diodes into a two-dimensional transmission-line system, we present an experimental demonstration of the actively controlled magnetic topological transition of dispersion based on electrically controllable metamaterials. With the increase in voltage, we measure the different emission patterns from a point source inside the structure and observe the phase-transition process of IFCs. The realization of an actively tuned topological transition will open up a new avenue in the dynamical control of metamaterials.

  10. Communications and control for electric power systems: Final report

    Energy Technology Data Exchange (ETDEWEB)

    Kirkham, H.

    1998-04-01

    This report is a summary of some of the work done on the Communications and Control project, with particular emphasis on the achievements during the years 1986--1996. During those years, the project moved away from concern with dispersed storage and generation and its impact on power system operation (the team was responsible for studies in this area, and for making a power system simulator that included DSG), and became involved in more concrete work aimed at applying high-tech solutions to problems of power system communications and control. This report covers work done at JPL on the following topics: (1) the measurement of electric and magnetic fields, both ac and dc; (2) the use of optical power to supply low-power electronics; (3) the design of a fault-tolerant communication system designed for distribution automation; and (4) a digital phase locked loop that allows the use of low-power transmitting electronics to recreate a good-quality signal at the receiver. In a report of this kind, only the results and highlights of the work are described.

  11. A NOx control regulation for electric utility boilers in California

    International Nuclear Information System (INIS)

    Price, D.R.

    1992-01-01

    The reduction of oxides of nitrogen emissions is becoming an increasingly important part of ozone attainment plans. As a part of its ozone attainment plan, the Ventura County (California) Air Pollution Control Board adopted in June, 1991, a regulation (Rule 59) to limit oxides of nitrogen emissions from four electrical utility boilers in the county. Rule development took two years and involved considerable public input. The emission limit for each of two 750 megawatt units is set at 0.10 pounds of NO x per megawatt-hour net after June, 1994. The emission limit for each of two 215 megawatt units is 0.20 pounds of NO x per megawatt-hour after June, 1996. Additional limitations are included for fuel oil operation. The rule does not specify an emission control technology. Conventional selective catalytic reduction, urea injection and combustion modifications are considered the technologies most likely to be used to comply. At $17,613 per ton of NO x reduced for the two large boilers and $8.992 per ton of NO x reduced for the small boilers, the rule is considered cost effective. The capital cost for conventional selective catalytic reduction systems on all four boilers is expected to be in excess of $210,000,000

  12. Feedback controlled electrical nerve stimulation: a computer simulation.

    Science.gov (United States)

    Doruk, R Ozgur

    2010-07-01

    The role of repetitive firing in neurophysiologic or neuropsychiatric disorders, such as Parkinson, epilepsy and bipolar type disorders, has always been a topic of medical research as therapies target either the cease of firing or a decrease in its frequency. In electrotherapy, one of the mechanisms to achieve the purpose in point is to apply a low density electric current to the nervous system. In this study, a computer simulation is provided of a treatment in which the stimulation current is computed by nerve fiber cell membrane potential feedback so that the level of the current is automatically instead of manually adjusted. The behavior of the nerve cell is represented by the Hodgkin-Huxley (HH) model, which is slightly modified into a linear model with state dependent coefficients. Due to this modification, the algebraic and differential Riccati equations can be applied, which allows an optimal controller minimizing a quadratic performance index given by the user. Using a controlled current injection can decrease unnecessarily long current injection times that may be harmful to the neuronal network. This study introduces a prototype for a possible future application to a network of neurons as it is more realistic than a single neuron. Copyright 2010 Elsevier Ireland Ltd. All rights reserved.

  13. The Physics of Semiconductors

    Science.gov (United States)

    Brennan, Kevin F.

    1999-02-01

    Modern fabrication techniques have made it possible to produce semiconductor devices whose dimensions are so small that quantum mechanical effects dominate their behavior. This book describes the key elements of quantum mechanics, statistical mechanics, and solid-state physics that are necessary in understanding these modern semiconductor devices. The author begins with a review of elementary quantum mechanics, and then describes more advanced topics, such as multiple quantum wells. He then disusses equilibrium and nonequilibrium statistical mechanics. Following this introduction, he provides a thorough treatment of solid-state physics, covering electron motion in periodic potentials, electron-phonon interaction, and recombination processes. The final four chapters deal exclusively with real devices, such as semiconductor lasers, photodiodes, flat panel displays, and MOSFETs. The book contains many homework exercises and is suitable as a textbook for electrical engineering, materials science, or physics students taking courses in solid-state device physics. It will also be a valuable reference for practicing engineers in optoelectronics and related areas.

  14. Temperature dependent electrical characterisation of Pt/HfO{sub 2}/n-GaN metal-insulator-semiconductor (MIS) Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Shetty, Arjun, E-mail: arjun@ece.iisc.ernet.in; Vinoy, K. J. [Electrical Communication Engineering, Indian Institute of Science, Bangalore, India 560012 (India); Roul, Basanta; Mukundan, Shruti; Mohan, Lokesh; Chandan, Greeshma; Krupanidhi, S. B. [Materials Research Centre, Indian Institute of Science, Bangalore, India 560012 (India)

    2015-09-15

    This paper reports an improvement in Pt/n-GaN metal-semiconductor (MS) Schottky diode characteristics by the introduction of a layer of HfO{sub 2} (5 nm) between the metal and semiconductor interface. The resulting Pt/HfO{sub 2}/n-GaN metal-insulator-semiconductor (MIS) Schottky diode showed an increase in rectification ratio from 35.9 to 98.9(@ 2V), increase in barrier height (0.52 eV to 0.63eV) and a reduction in ideality factor (2.1 to 1.3) as compared to the MS Schottky. Epitaxial n-type GaN films of thickness 300nm were grown using plasma assisted molecular beam epitaxy (PAMBE). The crystalline and optical qualities of the films were confirmed using high resolution X-ray diffraction and photoluminescence measurements. Metal-semiconductor (Pt/n-GaN) and metal-insulator-semiconductor (Pt/HfO{sub 2}/n-GaN) Schottky diodes were fabricated. To gain further understanding of the Pt/HfO{sub 2}/GaN interface, I-V characterisation was carried out on the MIS Schottky diode over a temperature range of 150 K to 370 K. The barrier height was found to increase (0.3 eV to 0.79 eV) and the ideality factor decreased (3.6 to 1.2) with increase in temperature from 150 K to 370 K. This temperature dependence was attributed to the inhomogeneous nature of the contact and the explanation was validated by fitting the experimental data into a Gaussian distribution of barrier heights.

  15. The efficiency of direct torque control for electric vehicle behavior improvement

    Directory of Open Access Journals (Sweden)

    Gasbaoui Brahim

    2011-01-01

    Full Text Available Nowadays the electric vehicle motorization control takes a great interest of industrials for commercialized electric vehicles. This paper is one example of the proposed control methods that ensure both safety and stability the electric vehicle by the means of Direct Torque Control (DTC. For motion of the vehicle the electric drive consists of four wheels: two front ones for steering and two rear ones for propulsion equipped with two induction motors, due to their lightweight simplicity and high performance. Acceleration and steering are ensured by the electronic differential, permitting safe and reliable steering at any curve. The direct torque control ensures efficiently controlled vehicle. Electric vehicle direct torque control is simulated in MATLAB SIMULINK environment. Electric vehicle (EV demonstrated satisfactory results in all type of roads constraints: straight, ramp, downhill and bends.

  16. Control allocation for for regenerative braking of electric vehicles with an electric motor at the front axle using the state-dependent Riccati equation control technique

    NARCIS (Netherlands)

    Kanarachos, S.A.; Alirezaei, M.; Jansen, S.T.H.; Maurice, J.P.

    2014-01-01

    In this paper the systematic development of an integrated braking controller for a vehicle driven by an electric motor on the front axle is presented. The objective is to engage the electric motor only during braking, up to the point at which the vehicle reaches its manoeuvrability and stability

  17. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1981-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

  18. Design, implementation, and experimental validation of optimal power split control for hybrid electric trucks

    NARCIS (Netherlands)

    Keulen, T. van; Mullem, D. van; Jager, B. van; Kessels, J.T.B.A.; Steinbuch, M.

    2012-01-01

    Hybrid electric vehicles require an algorithm that controls the power split between the internal combustion engine and electric machine(s), and the opening and closing of the clutch. Optimal control theory is applied to derive a methodology for a real-time optimal-control-based power split

  19. Optimal control of an electric vehicle’s charging schedule under electricity markets

    DEFF Research Database (Denmark)

    Lan, Tian; Hu, Junjie; Kang, Qi

    2013-01-01

    As increasing numbers of electric vehicles (EVs) enter into the society, the charging behavior of EVs has got lots of attention due to its economical difference within the electricity market. The charging cost for EVs generally differ from each other in choosing the charging time interval (hourly...

  20. Electrical Procedures and Environmental Control Systems. Building Maintenance. Module IV. Instructor's Guide.

    Science.gov (United States)

    Sloan, Garry

    This curriculum guide, one of six modules keyed to the building maintenance competency profile developed by industry and education professionals, provides materials for two units on electrical procedures and environmental control systems. Unit 1, on electrical procedures, includes the following lessons: electrical safety; troubleshooting and…